Sample records for terbium silicides

  1. Elastic properties of terbium

    DEFF Research Database (Denmark)

    Spichkin, Y.I.; Bohr, Jakob; Tishin, A.M.


    The temperature dependence of the Young modulus along the crystallographic axes b and c (E(b) and E(c)), and the internal friction of a terbium single crystal have been measured. At 4.2 K, E(b) and E(c) are equal to 38 and 84.5 GPa, respectively. The lattice part of the Young modulus and the Debye...... temperature has been calculated. The origin of the Young modulus anomalies arising at the transition to the magnetically ordered state is discussed....

  2. High temperature structural silicides

    Energy Technology Data Exchange (ETDEWEB)

    Petrovic, J.J.


    Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

  3. Silicides: Materials for thermoelectric energy conversion (United States)

    Fedorov, Mikhail I.; Isachenko, Grigory N.


    There are few silicides that could be used for thermoelectric energy conversion, following higher silicides of transition metals: CrSi2, MnSi1.75, β-FeSi2, Ru2Si3, ReSi1.75, and solid solutions based on compounds of Mg2X (X = Si, Ge, and Sn). Some of them have very high figures of merit (ZT). It can be shown that, in some silicides, a high ZT is the result of energy spectrum optimization besides the decrease in thermal conductivity. This is very difficult to achieve in some materials, because the density of states is typically dependent only on the band structure of a material, for which there is no means to produce such a change. However, in solid solutions, if they have a special band structure of components, it is possible to alter the band structure to increase ZT.

  4. Synthesis and design of silicide intermetallic materials

    Energy Technology Data Exchange (ETDEWEB)

    Petrovic, J.J.; Castro, R.G.; Butt, D.P. [Los Alamos National Lab., NM (United States)] [and others


    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has a number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.

  5. Thermoelectric Properties of Semiconducting Silicide Nanowires (United States)

    Jin, Song; Sczech, Jeannine; Higgins, Jeremy; Zhou, Feng; Shi, Li


    Semiconducting silicides are promising thermoelectric materials. In addition to their respectable thermoelectric figure-of-merit (ZT up to 0.8), silicides have the advantages of low cost, excellent thermal stability and mechanical strength, and outstanding oxidation resistance, making them suitable for high temperature applications. We have developed general synthetic approaches to single crystal nanowires of silicides to investigate the enhancement of thermoelectric properties due to the reduced nanoscale dimension and to explore their applications in thermoelectrics. We will discuss the synthesis and structural characterization of nanowires of chromium disilicide (CrSi2) prepared via a chemical vapor transport (CVT) method and chemical vapor deposition (CVD) of organometallic precursors to synthesize the Novontony Chimney ladder phase MnSi1.75. The Seebeck coefficient, electrical conductivity, and thermal conductivity of individual CrSi2 nanowires were characterized using a suspended microdevice and correlated with the structural information obtained by microscopy on the same nanowires. This combined Seebeck coefficient and electrical conductivity measurements also provide an effective approach to probing the Fermi level, carrier concentration and mobility in nanowires. We will also discuss our progress in using individual nanostructures combined well-defined structural characterization to conclusively investigate the complex thermoelectric behaviors of silicide materials.

  6. Critical scattering of neutrons from terbium

    DEFF Research Database (Denmark)

    Als-Nielsen, Jens Aage; Dietrich, O.W.; Marshall, W.


    The inelasticity of the critical scattering of neutrons in terbium has been measured above the Neél temperature at the (0, 0, 2−Q) satellite position. The results show that dynamic slowing down of the fluctuations does occur in a second‐order phase transition in agreement with the general theory...

  7. Semiconductor composition containing iron, dysprosium, and terbium

    Energy Technology Data Exchange (ETDEWEB)

    Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.; Malasi, Abhinav; Taz, Humaira; Farah, Annettee E.; Kalyanaraman, Ramakrishnan; Duscher, Gerd Josef Mansfred; Patel, Maulik K.


    An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

  8. Fusion silicide coatings for tantalum alloys. (United States)

    Warnock, R. V.; Stetson, A. R.


    Calculation of the performance of fusion silicide coatings under simulated atmospheric reentry conditions to a maximum temperature of 1810 K (2800 F). Both recently developed and commercially available coatings are included. Data are presented on oxidation rate with and without intentional defecting, the influence of the coatings on the ductile-brittle bend transition temperature, and the mechanical properties. Coatings appear capable of affording protection for at least 100 simulated cycles to 2600 F and 63 cycles to 2800 F.

  9. Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires


    Hsu, Hsun-Feng; Chen, Chun-An; Liu, Shang-Wu; Tang, Chun-Kai


    Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-silicide region were attributed high- and low-resistance parts of nanowire, respectively, causing the re...

  10. Thermoelectric properties of group VI metal silicide semiconductors (United States)

    Nonomura, T.; Wen, C.; Kato, A.; Isobe, K.; Kubota, Y.; Nakamura, T.; Yamashita, M.; Hayakawa, Y.; Tatsuoka, H.

    The electrical and thermoelectric properties of group VI metal silicides, such as the Mo- and W-silicides as well as CrSi2, were investigated. The electronic band structures of the hexagonal- MoSi2, - WSi2 and CrSi2, were calculated using the first-principles total-energy calculation program in pseudopotential schemes with plane-wave basis functions, and their Seebeck coefficients were also calculated. In addition, the Mo- and W-silicides were synthesized using mechanical alloying followed by a spark plasma sintering technique, and their structural, electric and thermoelectric properties were examined.

  11. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina


    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  12. Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction

    NARCIS (Netherlands)

    Stavitski, N.; van Dal, Mark J.H.; Lauwers, Anne; Vrancken, Christa; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.


    In order to measure silicide-to-silicon specific contact resistance �?c, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels

  13. Anomalous frequency dependent diamagnetism in metal silicide (United States)

    Dahal, Ashutosh; Gunasekera, Jagat; Harriger, Leland; Singh, David J.; Singh, Deepak K.; Leland Harriger Collaboration

    Discovery of superconductivity in PbO-type FeSe has generated a lot of interest. Among the samples we synthesize with similar structure, NiSi has showed anomalous but very interesting results. Nickel silicides are important electronic materials that have been used as contacts for field effect transistors, as interconnects and in nanoelectronic devices. The magnetic properties of NiSi are not well known, however. In this presentation, we report a highly unusual magnetic phenomenon in NiSi. The ac susceptibility measurements on NiSi reveal strong frequency dependence of static and dynamic susceptibilities that are primarily diamagnetic at room temperature. The static susceptibility is found to exhibit a strong frequency dependence of the diamagnetic response below 100K, while dynamic susceptibility showed peak type feature at 10KHz frequency around 50K. Detailed neutron scattering measurements on high quality powder sample of NiSi on SPINS cold spectrometer further revealed an inelastic peak around 1.5meV, even though no magnetic order is detected. The inelastic peak dissipates above 100K, which is where the static susceptibility starts to diverge with frequency. Research is supported by U.S. Department of Energy, Office of Basic Energy Sciences under Grant No. DE-SC0014461.

  14. Submicron Features in Higher Manganese Silicide

    Directory of Open Access Journals (Sweden)

    Yatir Sadia


    Full Text Available The world energy crisis had increased the demand for alternative energy sources and as such is one of the topics at the forefront of research. One way for reducing energy consumption is by thermoelectricity. Thermoelectric effects enable direct conversion of thermal into electrical energy. Higher manganese silicide (HMS, MnSi1.75 is one of the promising materials for applications in the field of thermoelectricity. The abundance and low cost of the elements, combined with good thermoelectric properties and high mechanical and chemical stability at high temperatures, make it very attractive for thermoelectric applications. Recent studies have shown that Si-rich HMS has improved thermoelectric properties. The most interesting of which is the unusual reduction in thermal conductivity. In the current research, transmission (TEM and scanning (SEM electron microscopy as well as X-ray diffraction methods were applied for investigation of the govern mechanisms resulting in very low thermal conductivity values of an Si-rich HMS composition, following arc melting and hot-pressing procedures. In this paper, it is shown that there is a presence of sub-micron dislocations walls, stacking faults, and silicon and HMS precipitates inside each other apparent in the matrix, following a high temperature (0.9 Tm hot pressing for an hour. These are not just responsible for the low thermal conductivity values observed but also indicate the ability to create complicate nano-structures that will last during the production process and possibly during the application.

  15. Raman spectroscopy study of the doping effect of the encapsulated terbium halogenides on single-walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Kharlamova, M.V.; Kramberger, C.; Mittelberger, A. [University of Vienna, Faculty of Physics, Vienna (Austria)


    In the present work, the doping effect of terbium chloride, terbium bromide, and terbium iodide on single-walled carbon nanotubes (SWCNTs) was compared by Raman spectroscopy. A precise investigation of the doping-induced alterations of the Raman modes of the filled SWCNTs was conducted. The shifts of the components of the Raman modes and modification of their profiles allowed concluding that the inserted terbium halogenides have acceptor doping effect on the SWCNTs, and the doping efficiency increases in the line with terbium iodide, terbium bromide, and terbium chloride. (orig.)

  16. Si-Ge Nano-Structured with Tungsten Silicide Inclusions (United States)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred


    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  17. Formation of cobalt silicide by ion beam mixing (United States)

    Min, Ye; Burte, Edmund P.; Ryssel, Heiner


    The formation of cobalt silicides by arsenic ion implantation through a cobalt film which causes a mixing of the metal with the silicon substrate was investigated. Furthermore, cobalt suicides were formed by rapid thermal annealing (RTA). Sheet resistance and silicide phases of implanted Co/Si samples depend on the As dose. Ion beam mixing at doses higher than 5 × 10 15 cm -2 and RTA at temperatures T ⩾ 900° C result in almost equal values of Rs. RBS and XRD spectra of these samples illustrate the formation of a homogeneous CoSi 2 layer. Significant lateral growth of cobalt silicide beyond the edge of patterned SiO 2 was observed in samples which were only subjected to an RTA process ( T ⩾ 900 ° C), while this lateral suicide growth could be reduced efficiently by As implantation prior to RTA.

  18. Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact. (United States)

    Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien


    This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

  19. Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

    Directory of Open Access Journals (Sweden)

    Yu-Ru Lin


    Full Text Available This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs. The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A, subthreshold slope (186 mV/dec., and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

  20. Magnetocaloric effect of thin Terbium films (United States)

    Mello, V. D.; Anselmo, D. H. A. L.; Vasconcelos, M. S.; Almeida, N. S.


    We report a theoretical study of the magnetocaloric effect of Terbium (Tb) thin films due to finite size and surface effects in the helimagnetic phase, corresponding to a temperature range from TC=219 K to TN=231 K, for external fields of the order of kOe. For a Tb thin film of 6 monolayers submitted to an applied field (ΔH =30 kOe, ΔH =50 kOe and ΔH = 70 kOe) we report a significative change in adiabatic temperature, ΔT / ΔH , near the Néel temperature, of the order ten times higher than that observed for Tb bulk. On the other hand, for small values of the magnetic field, large thickness effects are found. For external field strength around few kOe, we have found that the thermal caloric efficiency increases remarkably for ultrathin films. For an ultrathin film with 6 monolayers, we have found ΔT / ΔH = 43 K/T while for thicker films, with 20 monolayers, ΔT / ΔH = 22 K/T. Our results suggest that thin films of Tb are a promising material for magnetocaloric effect devices for applications at intermediate temperatures.

  1. Femtosecond XUV spectroscopy of gadolinium and terbium

    Energy Technology Data Exchange (ETDEWEB)

    Carley, Robert; Frietsch, Bjoern; Doebrich, Kristian; Teichmann, Martin; Gahl, Cornelius; Noack, Frank [Max-Born-Institute, Berlin (Germany); Schwarzkopf, Olaf; Wernet, Philippe [Helmholtz-Zentrum fuer Materialien und Energie (BESSY II), Berlin (Germany); Weinelt, Martin [Max-Born-Institute, Berlin (Germany); Fachbereich Physik, Freie Universitaet, Berlin (Germany)


    We present recent results of time-resolved IR-pump-XUV-probe experiments on the ultrafast demagnetization of thin films of Gadolinium(0001) and Terbium(0001) on Tungsten(110). The experiments are the first to be done using a newly developed high-order harmonics (HHG) XUV beamline at the MBI. The beamline delivers monochromated XUV pulses of approximately 150 fs duration with a photon energy resolution of up to 150 meV. Following excitation by intense femtosecond infrared (IR) pulses, photoemission with 35 eV photons allows us to directly probe the 4f electrons and their interaction with the valence band, both in the bulk and at the surface, to follow the ultrafast magnetization dynamics in the Lanthanide metals. As signatures of ultrafast demagnetization of the metal by the IR pulse, we see for the first time, rapid strong reduction of the exchange splitting in the valence band. This is followed by a slower demagnetization due to the spin-lattice interaction.

  2. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, T.J.


    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  3. Silicon and silicide nanowires applications, fabrication, and properties

    CERN Document Server

    Tu, King-Ning


    This book comprises theoretical and experimental analysis of various properties of silicon nanocrystals, research methods and preparation techniques, and some promising applications. It comprises nine chapters. The first three are based on processing, the next three on properties, and the last three on applications of nanowires of silicon and silicides.

  4. Spin, Charge, and Bonding in Transition Metal Mono Silicides

    NARCIS (Netherlands)

    Marel, D. van der; Damascelli, A.; Schulte, K.; Menovsky, A. A.


    Published in: Physica B 244 (1998) 138-147 citations recorded in [Science Citation Index] Abstract: We review some of the relevant physical properties of the transition metal mono-silicides with the FeSi structure (CrSi, MnSi, FeSi, CoSi, NiSi, etc) and explore the relation between their structural

  5. Texture in thin film silicides and germanides: A review

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail:; De Keyser, K.; Detavernier, C. [Department of Solid State Sciences, Ghent University, Ghent (Belgium); Lavoie, C. [IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)


    Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

  6. Green fluorescence of terbium ions in lithium fluoroborate glasses ...

    Indian Academy of Sciences (India)

    Glasses; terbium ion; oscillator strengths; fluorescence; lifetimes; fibre lasers. 1. Introduction. Today glasses are most favourable engineering materials for abundant applications due to the wide ability of property altering by compositional modifications. The considerable examination of glass science to achieve required ...

  7. Green fluorescence of terbium ions in lithium fluoroborate glasses ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 39; Issue 3. Green fluorescence of terbium ions in lithium fluoroborate glasses for fibre lasers and display devices. G R DILLIP C MADHUKAR REDDY M RAJESH SHIVANAND CHAURASIA B DEVA PRASAD RAJU S W JOO. Volume 39 Issue 3 June 2016 pp 711-717 ...

  8. Nanoscale contact engineering for Silicon/Silicide nanowire devices (United States)

    Lin, Yung-Chen

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at nanoscale have indicated possible deviations from the bulk and the thin film system. Here we studied growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. We have grown single crystal PtSi nanowires and PtSi/Si/PtSi nanowire heterostructures through solid state reaction. TEM studies show that the heterostructures have atomically sharp interfaces free of defects. Electrical measurement of PtSi nanowires shows a low resistivity of ˜28.6 μΩ·cm and a high breakdown current density beyond 108 A/cm2. Furthermore, using single-crystal PtSi/Si/PtSi nanowire heterostructures with atomically clean interfaces, we have fabricated p-channel enhancement mode transistors with the best reported performance for intrinsic silicon nanowires to date. In our results, silicide can provide a clean and no Fermi level pinning interface and then silicide can form Ohmic-contact behavior by replacing the source/drain metal with PtSi. It has been proven by our experiment by contacting PtSi with intrinsic Si nanowires (no extrinsic doping) to achieve high performance p-channel device. By utilizing the same approach, single crystal MnSi nanowires and MnSi/Si/MnSi nanowire heterojunction with atomically sharp interfaces can also been grown. Electrical transport studies on Mn

  9. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)


    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  10. Electronic properties of semiconducting silicides: fundamentals and recent predictions

    Energy Technology Data Exchange (ETDEWEB)

    Ivanenko, L.I.; Shaposhnikov, V.L.; Filonov, A.B.; Krivosheeva, A.V.; Borisenko, V.E.; Migas, D.B.; Miglio, L.; Behr, G.; Schumann, J


    This review emphasizes progress in theoretical simulation and experiments that have been performed in the past years for semiconducting silicides. New fundamental electronic and optical properties of Ca{sub 2}Si and BaSi{sub 2}, recently found RuSi{sub 2} phase, ternaries in Fe-Os-Si and Ru-Os-Si systems, {beta}-FeSi{sub 2}, Mg{sub 2}Si and CrSi{sub 2} with stretched and compressed lattices as well as transport properties of {beta}-FeSi{sub 2}, ReSi{sub 1.75}, Ru{sub 2}Si{sub 3} are presented. Prospects for practical applications of semiconducting silicides are discussed.

  11. Reactive growth of niobium silicides in bulk diffusion couples

    Energy Technology Data Exchange (ETDEWEB)

    Milanese, Chiara; Buscaglia, Vincenzo; Maglia, Filippo; Anselmi-Tamburini, Umberto


    The diffusion-controlled growth of niobium silicides (NbSi{sub 2} and Nb{sub 5}Si{sub 3}) was studied in Nb/Si and Nb/NbSi{sub 2} bulk diffusion couples annealed at 1200-1350 degree sign C for 2-24 h. Both compounds were found to grow as parallel layers, according to the parabolic rate law. The concept of the integrated diffusion coefficient is used to describe the growth kinetics of the two silicides. The corresponding activation energy is 263 kJ/mol for Nb{sub 5}Si{sub 3} and 304 kJ/mol for NbSi{sub 2}. The activation energy (in eV) scales as 0.98T{sub m}(K)/1000 for Nb{sub 5}Si{sub 3} and as 1.4T{sub m}(K)/1000 for NbSi{sub 2} in agreement with the general behavior observed for many transition metal silicides. The position of the Kirkendall plane inside the Nb{sub 5}Si{sub 3} layer developed in Nb/NbSi{sub 2} couples indicates that, in the present temperature range, the diffusion of Si in Nb{sub 5}Si{sub 3} is considerably faster than that of Nb.

  12. Syntheses of Nanostructure Bundles Based on Semiconducting Metal Silicides (United States)

    Li, Wen; Ishikawa, Daisuke; Tatsuoka, Hirokazu


    A variety of nanostructure bundles and arrays based on semiconducting metal silicides have been synthesized using abundant and non-toxic starting materials. Three types of fabrication techniques of the nanostructure bundles or arrays, including direct growth, template synthesis using natural nanostructured materials and template synthesis using artificially fabricated nanostructured materials are demonstrated. CrSi2 nanowire bundles were directly grown by the exposure of Si substrates to CrCl2 vapor at atmospheric pressure. A hexagonal MoSi2 nanosheet, Mg2Si/MgO composite nanowire and Mg2Si nanowire bundles and MnSi1.7 nanowire array were synthesized using a MoS2 layered material, a SiOx nanofiber bundle, a Si nanowire array, and a Si nanowire array as the templates, respectively. Additionally, the fabrication phenomenon and structural properties of the nanostructured semiconducting metal silicides were investigated. These reactions provided the low-cost and controllable synthetic techniques to synthesize large scale and one-dimensional semiconducting metal silicides for thermoelectric applications.

  13. Terahertz Cherenkov radiation from ultrafast magnetization in terbium gallium garnet (United States)

    Gorelov, S. D.; Mashkovich, E. A.; Tsarev, M. V.; Bakunov, M. I.


    We report an experimental observation of terahertz Cherenkov radiation from a moving magnetic moment produced in terbium gallium garnet by a circularly polarized femtosecond laser pulse via the inverse Faraday effect. Contrary to some existing theoretical predictions, the polarity of the observed radiation unambiguously demonstrates the paramagnetic, rather than diamagnetic, nature of the ultrafast inverse Faraday effect. From measurements of the radiation field, the Verdet constant in the subpicosecond regime is ˜3-10 times smaller than its table quasistatic value.

  14. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    Directory of Open Access Journals (Sweden)

    Vlasova M.


    Full Text Available The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

  15. Oxidation behavior of multiphase molybdenum-molybdenum silicide-molybdenum silicide boride intermetallics (United States)

    Dheeradhada, Voramon Supatarawanich

    Multiphase Mo-Mo3Si-Mo5SiB2(T2) alloys of various compositions and microstructures were investigated for oxidation resistance at 800 and 1300°C. The alloys varied in Si/B ratio from 1:1 to 1:2 and their microstructures were processed to have the Mo phase distributed as a continuous phase or as discrete particles. At 800°C, the alloys exhibited poor oxidation resistance regardless of Si/B ratio or their microstructures. Oxide scale consisted of MoO 3 and boron-containing glass. Alloys with lower Si/B ratio yielded silicate glass with lower viscosity that resulted in lower weight loss compared to the high Si/B ratio alloys. Intermediate layers of Mo and Mo-Si-O were observed adjacent to Mo5SiB2 and Mo3Si phases, respectively. At 1300°C, the multiphase alloys developed a protective glass scale with an intermediate layer of (Mo+glass) between the base alloy and outer glass scale. Boron-lean silicate glass was essential for the protection from further oxidation. For oxidation resistance at 1300°C, alloys require a high Si/B ratio. In terms of microstructures, the multiphase alloys consisting of small Mo particles uniformly dispersed in fine spacing of silicide phases provide better oxidation resistance than the alloys with continuous Mo dendrites. Glass preferentially formed at Mo3Si rather than at T2 phase. Vapor-solid diffusion experiments were carried out with single phase alloys containing either Mo3Si or T2 as the major phase, and the multiphase Mo-10Si-10B(at%) alloy. The alloys were exposed to vacuum to induce silicon loss resulting in the formation of a Mo layer. In addition, microprobe analysis was carried out for the determination of composition profiles across the (Mo+glass) layer and the external glass scale formed on the Mo-13.2Si-13.2B (at%) alloy oxidized at 1300°C. The microprobe data were analyzed for interdiffusion fluxes and interdiffusion coefficients with the aid of a computer program called "MultiDiFlux (c)". The effective interdiffusion

  16. XRD and XPS characterisation of transition metal silicide thin films (United States)

    Tam, P. L.; Cao, Y.; Nyborg, L.


    Binary transition metal silicides based on the systems Ti-Si, Fe-Si, Ni-Si and Cr-Si were fabricated on Si wafers by means of ion-beam co-sputter deposition and subsequent annealing. The crystalline structures of the phases formed were identified from the characteristic patterns acquired by means of X-ray diffraction (XRD) measurements. The phase formation sequences were described by means of the Pretorius' effective heat of formation (EHF) model. For the Ti-Si, Fe-Si and Ni-Si systems, single phase thin films of TiSi2, β-FeSi2 and NiSi2 were generated as the model predicts, while a mixture of CrSi + CrSi2 phases was obtained for the Cr-Si system. The surface chemical condition of individual specimens was analysed by using X-ray photoelectron spectroscopy (XPS). The chemical shifts of transition metal 2p3/2 peaks from their metallic to silicide states were depicted by means of the Auger parameters and the Wagner plots. The positive chemical shift of 2.0 eV for Ni 2p3/2 peak of NiSi2 is mainly governed by the initial-state effects. For the other silicide specimens, the initial-state and final-state effects may oppose one another with similar impact. Consequently, smaller binding energy shifts of both negative and positive character are noted; a positive binding energy shift of 0.3 eV for the Fe 2p3/2 level was shown for β-FeSi2 and negative binding energy shifts of 0.1 and 0.3 eV were determined for CrSi + CrSi2 and TiSi2, respectively.

  17. Growth and stability of dysprosium silicide nanostructures on Si(001) (United States)

    Zeman, Matthew; Nemanich, Robert


    The growth and coarsening dynamics of epitaxial dysprosium silicide nanostructures on Si(001) are observed using tunable ultra-violet free electron laser excitation for photo-electron emission microscopy (PEEM). A dense array of compact silicide nanostructures is observed to coarsen during annealing at 950-1050C. Some of the nanostructures grow into large flat-topped rectangular islands at the expense of smaller islands which disappear via Ostwald ripening. The coarsening rate of the island distribution increases with increasing temperature, and the formation of a flat top on the growing islands is related to strain relaxation. Additionally, the shape and growth rates of the islands may be influenced by the island crystal structure and/or local island distributions. A subsequent deposition of dysprosium onto the surface results in the nucleation of new island and nanowire structures. Immediately after the deposition is terminated the nanowires begin to decay from the ends while the larger island structures grow. The decay of the wires can be attributed to Ostwald ripening and is explained in terms of the Gibbs-Thompson relation, where the high adatom concentration at the nanowire ends leads to the diffusion of adatoms away from the wires towards the larger surrounding structures. In situ movies will be presented which detail the growth and coarsening processes.

  18. Influence of IR-laser irradiation on {alpha}-SiC-chromium silicides ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Vlasova, M. [Centro de Investigaciones en Ingenieria y Ciencias Aplicadas, Autonomous University of State of Morelos, Av. Universidad 1001-Col. Chamilpa, 62210 Cuernavaca, Morelos (Mexico)]. E-mail:; Marquez Aguilar, P.A. [Centro de Investigaciones en Ingenieria y Ciencias Aplicadas, Autonomous University of State of Morelos, Av. Universidad 1001-Col. Chamilpa, 62210 Cuernavaca, Morelos (Mexico); Resendiz-Gonzalez, M.C. [Centro de Investigaciones en Ingenieria y Ciencias Aplicadas, Autonomous University of State of Morelos, Av. Universidad 1001-Col. Chamilpa, 62210 Cuernavaca, Morelos (Mexico); Kakazey, M. [Centro de Investigaciones en Ingenieria y Ciencias Aplicadas, Autonomous University of State of Morelos, Av. Universidad 1001-Col. Chamilpa, 62210 Cuernavaca, Morelos (Mexico); Bykov, A. [Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Str. Krzhizhanovskogo 3, Kiev 252680 (Ukraine); Gonzalez Morales, I. [Centro de Investigaciones en Ingenieria y Ciencias Aplicadas, Autonomous University of State of Morelos, Av. Universidad 1001-Col. Chamilpa, 62210 Cuernavaca, Morelos (Mexico)


    This project investigated the influence of IR-laser irradiation ({lambda} = 1064 nm, P = 240 mW) on composite ceramics SiC-chromium silicides (CrSi{sub 2}, CrSi, Cr{sub 5}Si{sub 3}) by methods of X-ray diffraction, electron microscopy, atomic force microscopy, and X-ray microanalysis. Samples were irradiated in air. It was established that a surface temperature of 1990 K was required to melt chromium silicides, evaporate silicon from SiC, oxidize chromium silicides, and enrich superficial layer by carbon and chromium oxide.

  19. Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

    Directory of Open Access Journals (Sweden)

    Polley Craig


    Full Text Available Abstract We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field.

  20. NMOS contact resistance reduction with selenium implant into NiPt silicide (United States)

    Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.


    A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

  1. Silicon to Nickel Silicide Longitudinal Nanowire Heterostructures: Synthesis, Electrical Characterization and Novel Devices


    Weber, Walter Michael


    The scope of this thesis is the synthesis and electrical characterization of Si to Ni silicide nanowire heterostructures with the focus on investigating their electronic transport properties and conceiving a novel type of transistor. Intrinsic Si nanowires (SiNW) were grown employing the vapor-liquid-solid mechanism. A central part of this thesis is the development of the longitudinal intrusion of Ni silicide into the SiNWs resulting in interfaces with a sharpness of at most a couple of n...

  2. Terbium luminescence in alumina xerogel fabricated in porous anodic alumina matrix under various excitation conditions

    Energy Technology Data Exchange (ETDEWEB)

    Gaponenko, N. V., E-mail: [Belarusian State University of Informatics and Radioelectronics (Belarus); Kortov, V. S. [Yeltsin Ural Federal University (Russian Federation); Orekhovskaya, T. I.; Nikolaenko, I. A. [Belarusian State University of Informatics and Radioelectronics (Belarus); Pustovarov, V. A.; Zvonarev, S. V.; Slesarev, A. I. [Yeltsin Ural Federal University (Russian Federation); Prislopski, S. Ya. [National Academy of Sciences of Belarus, Stepanov Institute of Physics (Belarus)


    Terbium-doped alumina xerogel layers are synthesized by the sol-gel method in pores of a porous anodic alumina film 1 {mu}m thick with a pore diameter of 150-180 nm; the film is grown on a silicon substrate. The fabricated structures exhibit terbium photoluminescence with bands typical of trivalent terbium terms. Terbium X-ray luminescence with the most intense band at 542 nm is observed for the first time for such a structure. Morphological analysis of the structure by scanning electron microscopy shows the presence of xerogel clusters in pore channels, while the main pore volume remains unfilled and pore mouths remain open. The data obtained confirm the promising applications of fabricated structures for developing matrix converters of X-rays and other ionizing radiations into visible light. The possibilities of increasing luminescence intensity in the matrix converter are discussed.

  3. Status of the atomized uranium silicide fuel development at KAERI

    Energy Technology Data Exchange (ETDEWEB)

    Kim, C.K.; Kim, K.H.; Park, H.D.; Kuk, I.H. [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)


    While developing KMRR fuel fabrication technology an atomizing technique has been applied in order to eliminate the difficulties relating to the tough property of U{sub 3}Si and to take advantage of the rapid solidification effect of atomization. The comparison between the conventionally comminuted powder dispersion fuel and the atomized powder dispersion fuel has been made. As the result, the processes, uranium silicide powdering and heat treatment for U{sub 3}Si transformation, become simplified. The workability, the thermal conductivity and the thermal compatibility of fuel meat have been investigated and found to be improved due to the spherical shape of atomized powder. In this presentation the overall developments of atomized U{sub 3}Si dispersion fuel and the planned activities for applying the atomizing technique to the real fuel fabrication are described.

  4. Development of molecular dynamics potential for uranium silicide fuels

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Jianguo; Zhang, Yongfeng; Hales, Jason D.


    Use of uranium–silicide (U-Si) in place of uranium dioxide (UO2) is one of the promising concepts being proposed to increase the accident tolerance of nuclear fuels. This is due to a higher thermal conductivity than UO2 that results in lower centerline temperatures. U-Si also has a higher fissile density, which may enable some new cladding concepts that would otherwise require increased enrichment limits to compensate for their neutronic penalty. However, many critical material properties for U-Si have not been determined experimentally. For example, silicide compounds (U3Si2 and U3Si) are known to become amorphous under irradiation. There was clear independent experimental evidence to support a crystalline to amorphous transformation in those compounds. However, it is still not well understood how the amorphous transformation will affect on fuel behavior. It is anticipated that modeling and simulation may deliver guidance on the importance of various properties and help prioritize experimental work. In order to develop knowledge-based models for use at the engineering scale with a minimum of empirical parameters and increase the predictive capabilities of the developed model, inputs from atomistic simulations are essential. First-principles based density functional theory (DFT) calculations will provide the most reliable information. However, it is probably not possible to obtain kinetic information such as amorphization under irradiation directly from DFT simulations due to size and time limitations. Thus, a more feasible way may be to employ molecular dynamics (MD) simulation. Unfortunately, so far no MD potential is available for U-Si to discover the underlying mechanisms. Here, we will present our recent progress in developing a U-Si potential from ab initio data. This work is supported by the Nuclear Energy Advanced Modeling and Simulation (NEAMS) program funded by the U.S. Department of Energy, Office of Nuclear Energy.

  5. Optical Properties of Lithium Terbium Fluoride and Implications for Performance in High Power Lasers (Postprint) (United States)



  6. Detection of biothiols in cells by a terbium chelate-Hg (II) system (United States)

    Tan, Hongliang; Chen, Yang


    Great efforts have been devoted to the development of sensitive and specific analysis methods for biothiols because of their important roles in biological systems. We present a new detection system for biothiols that is based on the reversible quenching and restoration of fluorescence of terbium chelate caused by Hg2+ and thiol species. In the presence of biothiols, a restoration of fluorescence of terbium chelate after quenching by Hg2+ was observed due to the interaction of Hg2+ with thiol groups, and the restored fluorescence increased with the concentration of biothiols. This method was sensitive and selective for biothiols. The detection limit was 80 nM for glutathione, 100 nM for Hcy, and 400 nM for Cysteine, respectively. The terbium chelate-Hg (II) system was successfully applied to determine the levels of biothiols in cancer cells and urine samples. Further, it was also shown to be comparable to Ellman's assay. Compared to other fluorescence methods, the terbium chelate probe is advantageous because interference from short-lived nonspecific fluorescence can be efficiently eliminated due to the long fluorescence lifetime of terbium chelate, which allows for detection by time-resolved fluorescence. The terbium chelate probe can serve as a diagnostic tool for the detection of abnormal levels of biothiols in disease.

  7. Cryogenic temperature characteristics of Verdet constant of terbium sesquioxide ceramics (United States)

    Snetkov, I. L.; Palashov, O. V.


    The dependence of the Verdet constant on temperature in the (80-300 K) range for a promising magneto-active material terbium sesquioxide Tb2O3 at the wavelengths of 405-1064 nm is considered. For each of the studied wavelengths, the Verdet constant of the material cooled down to the liquid nitrogen temperature increased by more than a factor of 3.2 as compared to the room temperature value. Similarly to the other paramagnetics, the increase follows the law ∼1/T. Approximations for the temperature dependence of the Verdet constant have been obtained and the value of 1/V·(dV/dT) has been estimated. This information is needed to determine the angle of rotation as well as the variation of the extinction ratio of a Faraday isolator with temperature and extremely important at creation a cryogenic Faraday devices.

  8. Biogenic terbium oxide nanoparticles as the vanguard against osteosarcoma (United States)

    Iram, Sana; Khan, Salman; Ansary, Abu Ayoobul; Arshad, Mohd; Siddiqui, Sahabjada; Ahmad, Ejaz; Khan, Rizwan H.; Khan, Mohd Sajid


    The synthesis of inner transition metal nanoparticles via an ecofriendly route is quite difficult. This study, for the first time, reports synthesis of terbium oxide nanoparticles using fungus, Fusarium oxysporum. The biocompatible terbium oxide nanoparticles (Tb2O3 NPs) were synthesized by incubating Tb4O7 with the biomass of fungus F. oxysporum. Multiple physical characterization techniques, such as UV-visible and photoluminescence spectroscopy, TEM, SAED, and zeta-potential were used to confirm the synthesis, purity, optical and surface characteristics, crystallinity, size, shape, distribution, and stability of the nanoemulsion of Tb2O3 NPs. The Tb2O3 NPs were found to inhibit the propagation of MG-63 and Saos-2 cell-lines (IC50 value of 0.102 μg/mL) and remained non-toxic up to a concentration of 0.373 μg/mL toward primary osteoblasts. Cell viability decreased in a concentration-dependent manner upon exposure to 10 nm Tb2O3 NPs in the concentration range 0.023-0.373 μg/mL. Cell toxicity was evaluated by observing changes in cell morphology, cell viability, oxidative stress parameters, and FACS analysis. Morphological examinations of cells revealed cell shrinkage, nuclear condensation, and formation of apoptotic bodies. The level of ROS within the cells-an indicator of oxidative stress was significantly increased. The induction of apoptosis at concentrations ≤ IC50 was corroborated by 4‧,6-diamidino-2-phenylindole dihydrochloride (DAPI) staining (DNA damage and nuclear fragmentation). Flow-cytometric studies indicated that the response was dose dependent with a threshold effect.

  9. Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering

    Energy Technology Data Exchange (ETDEWEB)

    Saha, A.R. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)]. E-mail:; Chattopadhyay, S. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India); School of Electrical, Electronics and Computer Engineering, University of Newcastle, Newcastle upon Tyne (United Kingdom); Bose, C. [Department of Electronics and Telecommunication Engineering, Jadavpur University, Calcutta 700032 (India); Maiti, C.K. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)


    Technology CAD has been used to study the performance of a silicided Schottky barrier (SB) MOSFET with gate, source and drain contacts realized with nickel-silicide. Elevated source-drain structures have been used towards the S/D engineering of CMOS devices. A full process-to-device simulation has been employed to predict the performance of sub-micron SB n-MOSFETs for the first time. A model for the diffusion and alloy growth kinetics has been incorporated in SILVACO-ATLAS and ATHENA to explore the processing and design parameter space for the Ni-silicided MOSFETs. The temperature and concentration dependent diffusion model for NiSi have been developed and necessary material parameters for nickel-silicide and epitaxial-Si have been incorporated through the C-interpreter function. Two-dimensional (2D) process-to-device simulations have also been used to study the dc and ac (RF) performance of silicided Schottky barrier (SB) n-MOSFETs. The extracted sheet resistivity, as a function of annealing temperature of the silicided S/D contacts, is found to be lower than the conventional contacts currently in use. It is also shown that the Technology CAD has the full capability to predict the possible dc and ac performance enhancement of a MOSFET with elevated S/D structures. While the simulated dc performance shows a clear enhancement, the RF analyses show no performance degradation in the cut-off frequency/propagation delay and also improve the ac performance due to the incorporation of silicide contacts in the S/D region.

  10. Epitaxial insertion of gold silicide nanodisks during the growth of silicon nanowires. (United States)

    Um, Han-Don; Jee, Sang-Won; Park, Kwang-Tae; Jung, Jin-Young; Guo, Zhongyi; Lee, Jung-Ho


    Nanodisk-shaped, single-crystal gold silicide heterojunctions were inserted into silicon nanowires during vapor-liquid-solid growth using Au as a catalyst within a specific range of chlorine-to-hydrogen atomic ratio. The mechanism of nanodisk formation has been investigated by changing the source gas ratio of SiCl4 to H2. We report that an over-supply of silicon into the Au-Si liquid alloy leads to highly supersaturated solution and enhances the precipitation of Au in the silicon nanowires due to the formation of unstable phases within the liquid alloy. It is shown that the gold precipitates embedded in the silicon nanowires consisted of a metastable gold silicide. Interestingly, faceting of gold silicide was observed at the Au/Si interfaces, and silicon nanowires were epitaxially grown on the top of the nanodisk by vapor-liquid-solid growth. High resolution transmission electron microscopy confirmed that gold silicide nanodisks are epitaxially connected to the silicon nanowires in the direction of growth direction. These gold silicide nanodisks would be useful as nanosized electrical junctions for future applications in nanowire interconnections.

  11. Effect of silicide/silicon hetero-junction structure on thermal conductivity and Seebeck coefficient. (United States)

    Choi, Wonchul; Park, Young-Sam; Hyun, Younghoon; Zyung, Taehyoung; Kim, Jaehyeon; Kim, Soojung; Jeon, Hyojin; Shin, Mincheol; Jang, Moongyu


    We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I-V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 126.2 +/- 3.7 W/m. K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center.

  12. Simulated Fission Gas Behavior in Silicide Fuel at LWR Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States); Mo, Kun [Argonne National Lab. (ANL), Argonne, IL (United States); Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States); Harp, Jason [Argonne National Lab. (ANL), Argonne, IL (United States)


    As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U3Si2) at LWR conditions needs to be well-understood. However, existing experimental post-irradiation examination (PIE) data are limited to the research reactor conditions, which involve lower fuel temperature compared to LWR conditions. This lack of appropriate experimental data significantly affects the development of fuel performance codes that can precisely predict the microstructure evolution and property degradation at LWR conditions, and therefore evaluate the qualification of U3Si2 as an AFT for LWRs. Considering the high cost, long timescale, and restrictive access of the in-pile irradiation experiments, this study aims to utilize ion irradiation to simulate the inpile behavior of the U3Si2 fuel. Both in situ TEM ion irradiation and ex situ high-energy ATLAS ion irradiation experiments were employed to simulate different types of microstructure modifications in U3Si2. Multiple PIE techniques were used or will be used to quantitatively analyze the microstructure evolution induced by ion irradiation so as to provide valuable reference for the development of fuel performance code prior to the availability of the in-pile irradiation data.

  13. Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides (United States)

    Geenen, F. A.; Knaepen, W.; Moens, F.; Brondeel, L.; Leenaers, A.; Van den Berghe, S.; Detavernier, C.


    Silicon or germanium-based transistors are nowadays used in direct contact with silicide or germanide crystalline alloys for semiconductor device applications. Since these compounds are formed at elevated temperatures, accurate knowledge of the thermal expansion of both substrate and the contact is important to address temperature depending effects such as thermal stress. Here we report the linear coefficients of thermal expansion of Ni-, Pd- and Pt-based mono-germanides, mono-silicides and di-metal-silicides as determined by powder-based x-ray diffraction between 300 and 1225 K. The investigated mono-metallic compounds, all sharing the MnP crystal structure, as well as Pd2Si and Pt2Si exhibit anisotropic expansion. By consequence, this anisotropic behaviour should be taken into account for evaluating the crystal unit’s cell at elevated temperatures.

  14. Tuning magnetic response of epitaxial iron-silicide nanoislands by controlled self-assembled growth (United States)

    Goldfarb, I.; Camus, Y.; Dascalu, M.; Cesura, F.; Chalasani, R.; Kohn, A.


    We investigated the dependence of the magnetic response from epitaxial Si-rich iron-silicide nanostructures on their geometry. By varying substrate orientation and deposition parameters, we altered the growth kinetics and the lattice matching conditions at the silicide/silicon interface. These affected the silicide nanoisland crystal structure, size, shape, and proximity due to spatial ordering and, consequently, their magnetic response in terms of shape and opening of the respective hysteresis loops. In particular, we demonstrated correlation between magnetic anisotropy, expressed as the hysteresis coercive field, and the nanoisland spatial length-to-width aspect ratio. This correlation is explained by the contribution of undercoordinated island edge atoms to the overall measured magnetic behavior of the nanoisland arrays. Further, the island self-ordering along periodic surface steps adds dipolar interactions between the otherwise superparamagnetic nanoislands, consequently resulting in a magnetic response resembling that of a superspin glass.

  15. Crystal Structure of Silicides in a Ti - 0.7 WT.% Si Nanostructured Alloy (United States)

    Ivanov, M. B.; Manokhin, S. S.; Kolobova, A. Yu.


    Using warm, lengthwise grooved-roll processing of the Ti - 0.7 wt.% Si alloy, a nanostructured state is formed in it at 873 K with the grain-subgrain elements measuring about 280 nm. The titanium silicides precipitating during the dynamic strain-induced aging of the alloy are investigated by the methods of high-resolution scanning electron microscopy. It is found that the shape of the silicides is close to spherical, they have an FCClattice and an incoherent interface with the matrix.

  16. Optical anisotropy of quasi-1D rare-earth silicide nanostructures on Si(001) (United States)

    Chandola, S.; Speiser, E.; Esser, N.; Appelfeller, S.; Franz, M.; Dähne, M.


    Rare earth metals are known to interact strongly with Si(001) surfaces to form different types of silicide nanostructures. Using STM to structurally characterize Dy and Tb silicide nanostructures on vicinal Si(001), it will be shown that reflectance anisotropy spectroscopy (RAS) can be used as an optical fingerprint technique to clearly distinguish between the formation of a semiconducting two-dimensional wetting layer and the metallic one-dimensional nanowires. Moreover, the distinctive spectral features can be related to structural units of the nanostructures. RAS spectra of Tb and Dy nanostructures are found to show similar features.

  17. Optically probing the detection mechanism in a molybdenum silicide superconducting nanowire single-photon detector

    CERN Document Server

    Caloz, Misael; Timoney, Nuala; Weiss, Markus; Gariglio, Stefano; Warburton, Richard J; Schönenberger, Christian; Renema, Jelmer; Zbinden, Hugo; Bussieres, Felix


    We experimentally investigate the detection mechanism in a meandered molybdenum silicide (MoSi) superconducting nanowire single-photon detector by characterising the detection probability as a function of bias current in the wavelength range of 750 to 2050 nm. Contrary to some previous observations on niobium nitride (NbN) or tungsten silicide (WSi) detectors, we find that the energy-current relation is nonlinear in this range. Furthermore, thanks to the presence of a saturated detection efficiency over the whole range of wavelengths, we precisely quantify the shape of the curves. This allows a detailed study of their features, which are indicative of both Fano fluctuations and position-dependent effects.

  18. Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

    DEFF Research Database (Denmark)

    Pizzocchero, Filippo; Bøggild, Peter; Booth, Tim


    We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035°C in an Ar/H2 atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide...... channels, which are aligned with the intersections of the (100) surface of the wafer and the {110} planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer bulk. We apply energy dispersive x-ray spectroscopy, in combination with scanning and transmission...

  19. Autofluorescence-free Live-cell Imaging Using Terbium Nanoparticles. (United States)

    Cardoso Dos Santos, Marcelina; Goetz, Joan; Bartenlian, Hortense; Wong, Ka-Leung; Charbonniere, Loïc Joanny; Hildebrandt, Niko


    Fluorescent nanoparticles (NPs) have become irreplaceable tools for advanced cellular and sub-cellular imaging. While very bright NPs require excitation with UV or visible light, which can create strong autofluorescence of biological components, NIR-excitable NPs without autofluorescence issues exhibit much lower brightness. Here, we show the application of a new type of surface-photosensitized terbium NPs (Tb-NPs) for autofluorescence-free intracellular imaging in live HeLa cells. Combination of exceptionally high brightness, high photostability, and long photoluminecence (PL) lifetimes for highly efficient suppression of the short-lived autofluorescence, allowed for time-gated PL imaging of intracellular vesicles over 72 h without toxicity and at extremely low Tb-NP concentrations down to 12 pM. Detection of highly resolved long-lifetime (ms) PL decay curves from small (~10 µm2) areas within single cells within a few seconds emphasized the unprecedented photophysical properties of Tb-NPs for live-cell imaging that extend well beyond currently available nanometric imaging agents.

  20. Solar Thermochemical Hydrogen Production via Terbium Oxide Based Redox Reactions

    Directory of Open Access Journals (Sweden)

    Rahul Bhosale


    Full Text Available The computational thermodynamic modeling of the terbium oxide based two-step solar thermochemical water splitting (Tb-WS cycle is reported. The 1st step of the Tb-WS cycle involves thermal reduction of TbO2 into Tb and O2, whereas the 2nd step corresponds to the production of H2 through Tb oxidation by water splitting reaction. Equilibrium compositions associated with the thermal reduction and water splitting steps were determined via HSC simulations. Influence of oxygen partial pressure in the inert gas on thermal reduction of TbO2 and effect of water splitting temperature (TL on Gibbs free energy related to the H2 production step were examined in detail. The cycle (ηcycle and solar-to-fuel energy conversion (ηsolar-to-fuel efficiency of the Tb-WS cycle were determined by performing the second-law thermodynamic analysis. Results obtained indicate that ηcycle and ηsolar-to-fuel increase with the decrease in oxygen partial pressure in the inert flushing gas and thermal reduction temperature (TH. It was also realized that the recuperation of the heat released by the water splitting reactor and quench unit further enhances the solar reactor efficiency. At TH=2280 K, by applying 60% heat recuperation, maximum ηcycle of 39.0% and ηsolar-to-fuel of 47.1% for the Tb-WS cycle can be attained.

  1. Folate Receptor Targeted Alpha-Therapy Using Terbium-149

    CERN Document Server

    Müller, Cristina; Haller, Stephanie; Dorrer, Holger; Köster, Ulli; Johnston, Karl; Zhernosekov, Konstantin; Türler, Andreas; Schibli, Roger


    Terbium-149 is among the most interesting therapeutic nuclides for medical applications. It decays by emission of short-range α-particles (Eα = 3.967 MeV) with a half-life of 4.12 h. The goal of this study was to investigate the anticancer efficacy of a 149Tb-labeled DOTA-folate conjugate (cm09) using folate receptor (FR)-positive cancer cells in vitro and in tumor-bearing mice. 149Tb was produced at the ISOLDE facility at CERN. Radiolabeling of cm09 with purified 149Tb resulted in a specific activity of ~1.2 MBq/nmol. In vitro assays performed with 149Tb-cm09 revealed a reduced KB cell viability in a FR-specific and activity concentration-dependent manner. Tumor-bearing mice were injected with saline only (group A) or with 149Tb-cm09 (group B: 2.2 MBq; group C: 3.0 MBq). A significant tumor growth delay was found in treated animals resulting in an increased average survival time of mice which received 149Tb-cm09 (B: 30.5 d; C: 43 d) compared to untreated controls (A: 21 d). Analysis of blood parameters rev...

  2. Hardness and dielectric characteristics of flux grown terbium aluminate crystals

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, K.K.; Kotru, P.N. [Jammu Univ. (India). Dept. of Physics; Tandon, R.P. [National Physical Laboratory, New Delhi (India); Wanklyn, B.M. [Clarendon Laboratory, University of Oxford, Oxford (United Kingdom)


    Results of indentation induced Vickers hardness testing and dielectric studies conducted on flux-grown terbium aluminate crystals are presented. It is shown that the Vickers hardness value (H{sub v}) is independent of indentation time, but depends on the applied load. Applying the concept of Hays and Kendall, the load independent values are estimated for (110) and (001) planes. Differential behaviour in the crack formation of two different planes (110) and (001) is observed, while (001) plane develops Palmqvist cracks in the whole load range of 10-100 g, (110) plane shows a transition from Palmqvist to median cracks at 70 g. The fracture toughness, brittleness index and yield strength are determined for both the planes. The hardness anisotropy is reported. The dielectric constant, dielectric loss and conductivity are shown to be dependent on temperature and frequency of the applied a.c. field. The dielectric constant versus temperature shows a transition peak at 230 C, which remains independent of the frequency of the applied a.c. field in the range 1 kHz-13 MHz. (orig.) 36 refs.

  3. Growth, structure and lattice dynamics of rare earth silicide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Seiler, Anja


    In the present thesis the epitaxial growth, crystal structure, stoichiometry, thermal stability and lattice dynamics of self-organized EuSi{sub 2} and DySi{sub 2} films, nanoislands and nanowires are investigated. The rare earth silicide (RESi) nanostructures have attracted considerable interest due to their high conductivity, very low Schottky barrier heights, remarkable chemical stability, self-organization in high area density and defects-free nano-objects with tunable size and shape, and the direct integration into the Si technology. The extensive research is driven by the continuous downscaling of the CMOS electronics that require new approaches in the devices architecture and circuits interconnects. Although RESi nanostructures attracted a lot of interest already several years ago and a lot of research has been done in this field, the lattice dynamics of these materials are still unknown. Recent developments at third generation synchrotron radiation sources have brought their performance to a stage where phonon spectroscopy of nanostructures and thin layers became feasible using nuclear inelastic X-ray scattering. This novel experimental technique is based on the process of phonon-assisted nuclear resonant absorption/emission of X-rays from the nuclei of Moessbauer-active isotopes. The method provides direct access to the phonon density of states (DOS) of the investigated element. Together with the ab initio calculations it was possible to get a comprehensive understanding of the lattice dynamics. EuSi{sub 2} films and nanoislands and DySi{sub 2} films, nanoislands and nanowires have been grown on the vicinal Si(001) surface by molecular beam epitaxy. While DySi{sub 2} was grown following known growth procedures, the growth conditions for EuSi{sub 2} had to be established first. EuSi{sub 2} was grown at two different growth conditions to study the influence of crystal structure and morphology upon different growth temperatures. The structure has been

  4. Water splitting and electricity with semiconducting silicides in sunlight

    Energy Technology Data Exchange (ETDEWEB)

    Demuth, Martin [Max-Planck-Institut fuer Bioanorganische Chemie, Muelheim an der Ruhr (Germany); H2 Solar GmbH, Loerrach (Germany); Kerpen, Klaus; Kuklya, Andriy; Wuestkamp, Marc-Andre [Max-Planck-Institut fuer Kohlenforschung, Muelheim an der Ruhr (Germany)


    Generation of hydrogen and oxygen from water is described using mainly the semiconductor titanium disilicide as catalyst and halogen light which closely mimics solar radiation. The reactions are carried out under non-aerobic conditions, i.e., under nitrogen. High efficiencies are reached at 1.1-1.2 bar pressure. In the first phase of these reactions the catalytically active centers are built up. During this phase of reaction the kinetics of the water splitting process is growing in and leads to a linear dependence in the further course of the reactions which consists of >96% water splitting to yield hydrogen and oxygen in a 2:1 ratio. Hydrogen is partially and reversibly stored physically, depending on temperature. Oxygen behaves differently since it is stored entirely under the applied reaction conditions (50-80 C and light) and can be liberated from storage upon heating the slurries in the dark. This allows convenient separation of hydrogen and oxygen. The stability of titanium disilicide has been positively tested over several months. This material is abundant and inexpensive besides that it absorbs most of the solar radiation. Further, XRD and XPS studies show that titanium disilicide is 80% crystalline and the oxide formation is limited to a few molecular layers in depth. By using labeled water it was shown that labeled dioxygen appears in the gas phase of such reactions, this showing definitively that hydrogen evolution occuring here stems from photochemical splitting of water. Further, water splitting is part of a project which involves photoelectrochemistry and in which the silicides are used as light-receiving electrode and transition metal-coated anodes serve to split water. (orig.)

  5. Radiation Re-solution Calculation in Uranium-Silicide Fuels

    Energy Technology Data Exchange (ETDEWEB)

    Matthews, Christopher [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Andersson, Anders David Ragnar [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Unal, Cetin [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)


    The release of fission gas from nuclear fuels is of primary concern for safe operation of nuclear power plants. Although the production of fission gas atoms can be easily calculated from the fission rate in the fuel and the average yield of fission gas, the actual diffusion, behavior, and ultimate escape of fission gas from nuclear fuel depends on many other variables. As fission gas diffuses through the fuel grain, it tends to collect into intra-granular bubbles, as portrayed in Figure 1.1. These bubbles continue to grow due to absorption of single gas atoms. Simultaneously, passing fission fragments can cause collisions in the bubble that result in gas atoms being knocked back into the grain. This so called “re-solution” event results in a transient equilibrium of single gas atoms within the grain. As single gas atoms progress through the grain, they will eventually collect along grain boundaries, creating inter-granular bubbles. As the inter-granular bubbles grow over time, they will interconnect with other grain-face bubbles until a pathway is created to the outside of the fuel surface, at which point the highly pressurized inter-granular bubbles will expel their contents into the fuel plenum. This last process is the primary cause of fission gas release. From the simple description above, it is clear there are several parameters that ultimately affect fission gas release, including the diffusivity of single gas atoms, the absorption and knockout rate of single gas atoms in intra-granular bubbles, and the growth and interlinkage of intergranular bubbles. Of these, the knockout, or re-solution rate has an particularly important role in determining the transient concentration of single gas atoms in the grain. The re-solution rate will be explored in the following sections with regards to uranium-silicide fuels in order to support future models of fission gas bubble behavior.

  6. Impact of laser anneal on NiPt silicide texture and chemical composition

    Energy Technology Data Exchange (ETDEWEB)

    Feautrier, C.; Ozcan, A. S.; Lavoie, C.; Valery, A.; Beneyton, R.; Borowiak, C.; Clément, L.; Pofelski, A.; Salem, B.


    We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

  7. Role of Ti3Al/silicides on tensile properties of Timetal 834 at various ...

    Indian Academy of Sciences (India)

    Extremely fine coherent precipitates of ordered Ti3Al and relatively coarse incoherent precipitates of 2 silicide exist together in the near -titanium alloy, Timetal 834, in the dual phase matrix of primary and transformed . In order to assess the role of these precipitates, three heat treatments viz. WQ, WQ–A and WQ–OA, ...

  8. Effect of pre-treatment and nickel layer thickness on nickel silicide/silicon carbide contact (United States)

    Cao, Yu; Nyborg, Lars; Jelvestam, Urban; Yi, Danqing


    This investigation deals with the impact of pre-treatment and Ni thickness on the reactions of Ni-silicide/SiC contact fabrication. The specimens have been prepared by sputter depositing 3-100 nm Ni layer on 4H-SiC wafer followed by annealing at 800 °C in vacuum for 20 min. The results by means of XPS show as follows: among the chemical cleaning procedures which have been tested, the recipe NH4OH:H2O2:H2O = 1:1:5, 85 °C, 5 min; HF 10%, 80 °C, 2 min; boiling water 10 min is the most effective for SiC substrates. However, due to short time exposure in the air before experiment, certain contamination re-occurs. After annealing, the dominant silicide formed is Ni2Si, whereas C on the surface is graphite. Argon ion etching before the Ni deposition helps the formation of multi-layer structure. For the samples without pre-treatment or with chemical cleaning procedure, there is more C agglomerated at the surface and no multi-layer structure formed. Under the action of Ar ion etching, SiC decomposes more quickly and Ni diffuses faster. This effect together with limited C diffusivity in the formed silicide is a probable reason for the formation of the multi-layer structure. The silicides formed at the interface are dependent on the Ni layer thickness and substrate surface condition.

  9. Waste Photovoltaic Panels for Ultrapure Silicon and Hydrogen through the Low-Temperature Magnesium Silicide.

    Czech Academy of Sciences Publication Activity Database

    Dytrych, Pavel; Bumba, Jakub; Kaštánek, František; Fajgar, Radek; Koštejn, Martin; Šolcová, Olga


    Roč. 56, č. 45 (2017), s. 12863-12869 ISSN 0888-5885 R&D Projects: GA ČR GA15-14228S Institutional support: RVO:67985858 Keywords : magnesium silicide * waste photovoltaic panels * ultrapure silicon Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 2.843, year: 2016

  10. High pressure studies on uranium and thorium silicide compounds: Experiment and theory

    DEFF Research Database (Denmark)

    Yagoubi, S.; Heathman, S.; Svane, A.


    The actinide silicides ThSi, USi and USi2 have been studied under high pressure using both theory and experiment. High pressure synchrotron X-ray diffraction experiments were performed on polycrystalline samples in diamond anvil cells at room temperature and for pressures up to 54, 52 and 26 GPa,...

  11. The development of titanium silicide - boron doped polysilicon resistive temperature sensors

    NARCIS (Netherlands)

    Vereshchagina, E.; Vereshchagina, E.; Wolters, Robertus A.M.; Gardeniers, Johannes G.E.


    Thin films of titanium silicide (TiSi2) formed on heavily boron-doped polycrystalline silicon (poly-Si/B+) were applied for the first time for resistive temperature sensing. The temperature sensors exhibited a high-temperature coefficient of resistance of 3.8 × 10−3 ◦C−1, a linear dependence of

  12. Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization

    NARCIS (Netherlands)

    Stavitski, N.; van Dal, M.J.H.; Klootwijk, J.H.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan


    Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these

  13. Role of Ti3Al/silicides on tensile properties of Timetal 834 at various ...

    Indian Academy of Sciences (India)


    conditions. Tensile properties in the above three heat treated conditions were determined at room tempera- ture, 673 K and 873 K. It was observed that largely Ti3Al precipitates were responsible for increase in the yield strength and decrease in ductility in this alloy. Keywords. Near α-titanium alloy; Timetal 834; Ti3Al/silicide ...

  14. Thermoluminescence of cerium and terbium -doped calcium pyrophosphate

    Energy Technology Data Exchange (ETDEWEB)

    Roman L, J.; Cruz Z, E. [UNAM, Instituto de Ciencias Nucleares, Circuito Exterior, Ciudad Universitaria, 04510 Mexico D. F. (Mexico); Lozano R, I. B.; Diaz G, J. A. I., E-mail: [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Av. Legaria No. 694, 11500 Mexico D. F. (Mexico)


    The aim of this work is to report the thermoluminescence (Tl) response of Calcium Pyrophosphate phosphor doped with Cerium and Terbium impurities (Ca{sub 2}P{sub 2}O{sub 7}:Ce{sup 3+},Tb{sup 3+}). The phosphors were synthesized using the co-precipitation method and annealed at 900 degrees C by two hours for obtain the β phase. The intentional doping with Ce and Tb ions was 1 at.% and 0.1 at.%, whereas in the EDS results the concentration of impurities was 0.39 at.% and 0.05 at.%, respectively. The superficial morphology of phosphor is mainly composed by thin wafers of different size. All samples were exposed to gamma rays from {sup 60}Co in the Gammacell-200 irradiator. The Tl response of the phosphor was measured from Rt up to 350 degrees C and under nitrogen atmosphere in a Harshaw TLD 3500 reader. The glow curves of the Ca{sub 2}P{sub 2}O{sub 7}:Ce{sup 3+},Tb{sup 3+} powders showed a broad intense Tl peak centered at 165 degrees C and a shoulder at approximate 260 degrees C was observed. A linear Tl response in the range of absorbed dose of 0.2 to 10 Gy was obtained. Tl glow curves were analyzed using the initial rise (IR)and computerized glow curve deconvolution methods to evaluate the kinetics parameters such as activation energy (E), frequency factor (s) and kinetic order (b). (Author)

  15. Solvent polarity and oxygen sensitivity, rather than viscosity, determine lifetimes of biaryl-sensitised terbium luminescence. (United States)

    Walter, Edward R H; Williams, J A Gareth; Parker, David


    In a macrocyclic terbium complex incorporating a biaryl sensitiser, the observed variation of emission lifetime is shown to be determined by the solubility of oxygen in the solvent system and the relative energy of the chromophore excited state, rather than any dependence on solvent viscosity.

  16. Shape modification of Si nanowires by using faceted silicide catalysts nucleated in Au-Si catalyst solution during the growth

    Directory of Open Access Journals (Sweden)

    Erchao Meng


    Full Text Available The shape modification of Si nanowires is demonstrated using faceted solid silicide catalysts. The Si nanowires were grown on Si(111 substrates covered with Au as a catalyst using MnCl2 and Si powders as source materials. The solid silicide catalysts were nucleated and formed in the Au-Si catalyst solution at the top of the nanowires during the growth. The faceted solid silicides grew larger with increased growth time and played a role as a solid catalyst. The faceted shape of the catalyst defines the shape of the faceted Si nanowire. The squared Si nanowires were grown with the growth direction of Si[111] and the sidewalls of {110} and {211} planes. The growth evolution of the faceted Si nanowires occurs by a vapor-liquid-solid mechanism followed by the silicide vapor-solid-solid mechanism.

  17. The effects of Ta on the formation of Ni-silicide in Ni{sub 0.95x}Ta{sub x0.05}/Si systems

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Dongwon [Department of Ceramic Engineering, Yonsei University, Seoul (Korea, Republic of); Do, Kihoon [Department of Ceramic Engineering, Yonsei University, Seoul (Korea, Republic of); Ko, Dae-Hong [Department of Ceramic Engineering, Yonsei University, Seoul (Korea, Republic of)]. E-mail:; Choi, Siyoung [Process Development Team, Semiconductor R and D Division, Samsung Electronics Ltd. (Korea, Republic of); Ku, Ja-Hum [Process Development Team, Semiconductor R and D Division, Samsung Electronics Ltd. (Korea, Republic of); Yang, Cheol-Woong [School of Metallurgical and Materials Engineering, Sungkyunkwan University Suwon (Korea, Republic of)


    We investigated a comparative study on the silicide formation in the Ni{sub 0.95}Ta{sub 0.05}/Si alloy systems and Ni/Si systems. Ni and Ni{sub 0.95}Ta{sub 0.05} films were deposited on Si(1 0 0) substrate by DC magnetron sputtering and processed at various silicidation temperatures. The sheet resistance of the silicide from the Ni{sub 0.95}Ta{sub 0.05}/Si alloy systems was obtained at lower values than those in pure Ni/Si systems at any temperature. Using RBS and TEM analyses, we confirmed the presence of a Ta rich layer at the top of the Ni-silicide layer and the presence of small amounts of Ta in the silicide layer. The stability of the silicide layer for the Ni{sub 0.95}Ta{sub 0.05} systems is explained by the presence of the Ta rich layer on top of the Ni-silicide layer, as well as by the presence of the small amount of Ta in the Ni-silicide layer. The Ni-silicide using Ni{sub 0.95}Ta{sub 0.05}/Si system displayed a stable sheet resistance value of {approx}5 {omega}/sq which was maintained during the anneal process at 600 deg. C.

  18. Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

    Directory of Open Access Journals (Sweden)

    Galkin N.G.


    Full Text Available By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

  19. Development of a fused slurry silicide coating for the protection of tantalum alloys (United States)

    Packer, C. M.; Perkins, R. A.


    Results are reported of a research program to develop a reliable high-performance, fused slurry silicide protective coating for a tantalum-10 tungsten alloy for use at 1427 to 1538 C at 0.1 to 10 torr air pressure under cyclic temperature conditions. A review of silicide coating performance under these conditions indicated that the primary wear-out mode is associated with widening of hairline fissures in the coating. Consideration has been given to modifying the oxidation products that form on the coating surface to provide a seal for these fissures and to minimize their widening. On the basis of an analysis of the phase relationships between silica and various other oxides, a coating having the slurry composition 2.5Mn-33Ti-64.5Si was developed that is effective in the pressure range from 1 to 10 torr.

  20. Effect of Saturation Pressure Difference on Metal–Silicide Nanopowder Formation in Thermal Plasma Fabrication

    Directory of Open Access Journals (Sweden)

    Masaya Shigeta


    Full Text Available A computational investigation using a unique model and a solution algorithm was conducted, changing only the saturation pressure of one material artificially during nanopowder formation in thermal plasma fabrication, to highlight the effects of the saturation pressure difference between a metal and silicon. The model can not only express any profile of particle size–composition distribution for a metal–silicide nanopowder even with widely ranging sizes from sub-nanometers to a few hundred nanometers, but it can also simulate the entire growth process involving binary homogeneous nucleation, binary heterogeneous co-condensation, and coagulation among nanoparticles with different compositions. Greater differences in saturation pressures cause a greater time lag for co-condensation of two material vapors during the collective growth of the metal–silicide nanopowder. The greater time lag for co-condensation results in a wider range of composition of the mature nanopowder.

  1. Leakage current and deep levels in CoSi{sub 2} silicided junctions

    Energy Technology Data Exchange (ETDEWEB)

    Codegoni, D. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); Carnevale, G.P. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); De Marco, C. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); Mica, I. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); Polignano, M.L. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy)]. E-mail:


    In this work the leakage current of junctions with a self-aligned cobalt silicide is studied. It is shown that junctions with a self-aligned CoSi{sub 2} layer show a leakage current excess which is strongly reduced by increasing the PAI energy. This indicates that the observed leakage current excess is related to the CoSi{sub 2} formation conditions. The mechanism responsible for the leakage of CoSi{sub 2} junctions is investigated by current versus temperature measurements and by deep level transient spectroscopy. In addition, the role of the mechanical stress is investigated by comparing different isolation structures and by numerical stress calculations. It is concluded that the shallow trench isolation (STI) induced stress and the cobalt silicide formation concur to produce a junction leakage current increase by creating a deep level in silicon located close to midgap. This level can possibly identified with a level ascribed to a point defect excess.

  2. Arginine-responsive terbium luminescent hybrid sensors triggered by two crown ether carboxylic acids

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Lasheng [Key Laboratory of Theoretical Chemistry of Environment, Ministry of Education, School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Tang, Ke; Ding, Xiaoping [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Wang, Qianming, E-mail: [Key Laboratory of Theoretical Chemistry of Environment, Ministry of Education, School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Zhou, Zhan; Xiao, Rui [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China)


    Crown ether carboxylic acids constitute main building blocks for the synthesis of terbium containing covalent cross-linked luminescent materials. Both the complexes and the hybrid nanomaterials could exhibit remarkable green emissions in pure water. More importantly, they were found to have a profound effect on the luminescence responses to arginine compared with glutamic acid, histidine, tryptophan, threonine, tyrosine and phenylalanine in aqueous environment. The present study provided the possibility of using a host–guest mechanism as a way of signal transduction based on lanthanide supramolecular hybrid materials. - Highlights: • Crown ether carboxylic acids were found to sensitize terbium ions among a group of ethers. • The complexes and silica hybrid materials were both prepared and characterized. • They could exhibit remarkable green emissions in pure water.

  3. Comparative analysis of conjugated alkynyl chromophore-triazacyclononane ligands for sensitized emission of europium and terbium. (United States)

    Soulié, Marine; Latzko, Frédéric; Bourrier, Emmanuel; Placide, Virginie; Butler, Stephen J; Pal, Robert; Walton, James W; Baldeck, Patrice L; Le Guennic, Boris; Andraud, Chantal; Zwier, Jurriaan M; Lamarque, Laurent; Parker, David; Maury, Olivier


    A series of europium and terbium complexes based on a functionalized triazacyclononane carboxylate or phosphinate macrocyclic ligand is described. The influence of the anionic group, that is, carboxylate, methylphosphinate, or phenylphosphinate, on the photophysical properties was studied and rationalized on the basis of DFT calculated structures. The nature, number, and position of electron-donating or electron-withdrawing aryl substituents were varied systematically within the same phenylethynyl scaffold in order to optimize the brightness of the corresponding europium complexes and investigate their two-photon absorption properties. Finally, the europium complexes were examined in cell-imaging applications, and selected terbium complexes were studied as potential oxygen sensors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Spectrofluorimetric Determination of Human Serum Albumin Using Terbium-Danofloxacin Probe


    Ramezani, Amir M.; Manzoori, Jamshid L.; Amjadi, Mohammad; Jouyban, Abolghasem


    A spectrofluorimetric method is proposed for the determination of human serum albumin (HSA) and bovine serum albumin (BSA) using terbium-danofloxacin (Tb3+-Dano) as a fluorescent probe. These proteins remarkably enhance the fluorescence intensity of the Tb3+-Dano complex at 545 nm, and the enhanced fluorescence intensity of Tb3+-Dano is proportional to the concentration of proteins (HSA and BSA). Optimum conditions for the determination of HSA were investigated and found that the maximum resp...

  5. Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces (United States)

    Ye, Ning; Feser, Joseph P.; Sadasivam, Sridhar; Fisher, Timothy S.; Wang, Tianshi; Ni, Chaoying; Janotti, Anderson


    Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi2, CoSi2, NiSi, and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no dependence of interface conductance on the detailed structure of the interface. In particular, there is no difference in the thermal interface conductance between epitaxial and nonepitaxial silicide/silicon interfaces, nor between epitaxial interfaces with different interface orientations. While these silicide-based interfaces yield the highest reported interface conductances of any known interface with silicon, none of the interfaces studied are found to operate close to the phonon radiation limit, indicating that phonon transmission coefficients are nonunity in all cases and yet remain insensitive to interfacial structure. In the case of CoSi2, a comparison is made with detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain, and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. Above 100 K, the AGF approach significantly underpredicts interface conductance suggesting that energy transport does not occur purely by coherent transmission of phonons, even for epitaxial interfaces. The full-dispersion DMM closely predicts the experimentally observed interface conductances for CoSi2, NiSi, and TiSi2 interfaces, while it remains an open question whether inelastic scattering, cross-interfacial electron-phonon coupling, or other mechanisms could also account for

  6. An experimental study of the influence of oxygen on silicide formation with tungsten deposited from tungsten hexafluoride (United States)

    Zhang, S.-L.; Smith, U.; Buchta, R.; Östling, M.


    Tungsten disilicide (WSi2) was formed by annealing tungsten films deposited by low-pressure chemical vapor deposition on -silicon substrates. The influence of oxygen on the silicidation rate was studied. Si wafers with different oxygen content in the form of Czochralski, float-zone, and epitaxial wafers were used. Oxygen was also ion implanted into either the silicon substrate or the as-deposited tungsten film. The Rutherford backscattering technique was used to follow the progress of the silicidation. The silicidation rate was found to be dependent on the oxygen content of the Si substrates. The rate was lowest for Czochralski substrates and highest for float-zone substrates. Secondary ion mass spectroscopy was used to study the oxygen and fluorine profiles in the films prior to and after silicidation. Growth of WSi2 was found to be retarded concurrently with a pile-up of fluorine at the tungsten side of the W/WSi2 interface and a gettering of oxygen from the annealing atmosphere at the interface. Growth of WSi2 was then transferred to the tungsten surface. Oxygen implantation into silicon and tungsten, respectively, reduced the rate of silicide formation. Oxygen implantation into tungsten altered the distribution of fluorine and suppressed WSi2 growth at the tungsten surface. The observations led to a conceptual model, which ascribes the retardation in the growth of the inner WSi2 to a``poisoning'' effect caused by the increase of oxygen and fluorine levels at the interface.

  7. Genetically Encoded FRET-Sensor Based on Terbium Chelate and Red Fluorescent Protein for Detection of Caspase-3 Activity

    Directory of Open Access Journals (Sweden)

    Alexander S. Goryashchenko


    Full Text Available This article describes the genetically encoded caspase-3 FRET-sensor based on the terbium-binding peptide, cleavable linker with caspase-3 recognition site, and red fluorescent protein TagRFP. The engineered construction performs two induction-resonance energy transfer processes: from tryptophan of the terbium-binding peptide to Tb3+ and from sensitized Tb3+ to acceptor—the chromophore of TagRFP. Long-lived terbium-sensitized emission (microseconds, pulse excitation source, and time-resolved detection were utilized to eliminate directly excited TagRFP fluorescence and background cellular autofluorescence, which lasts a fraction of nanosecond, and thus to improve sensitivity of analyses. Furthermore the technique facilitates selective detection of fluorescence, induced by uncleaved acceptor emission. For the first time it was shown that fluorescence resonance energy transfer between sensitized terbium and TagRFP in the engineered construction can be studied via detection of microsecond TagRFP fluorescence intensities. The lifetime and distance distribution between donor and acceptor were calculated using molecular dynamics simulation. Using this data, quantum yield of terbium ions with binding peptide was estimated.

  8. Probing Transition-Metal Silicides as PGM-Free Catalysts for Hydrogen Oxidation and Evolution in Acidic Medium (United States)

    Mittermeier, Thomas; Madkikar, Pankaj; Wang, Xiaodong; Gasteiger, Hubert A.; Piana, Michele


    In this experimental study, we investigate various transition-metal silicides as platinum-group-metal-(PGM)-free electrocatalysts for the hydrogen oxidation reaction (HOR), and for the hydrogen evolution reaction (HER) in acidic environment for the first time. Using cyclic voltammetry in 0.1 M HClO4, we first demonstrate that the tested materials exhibit sufficient stability against dissolution in the relevant potential window. Further, we determine the HOR and HER activities for Mo, W, Ta, Ni and Mo-Ni silicides in rotating disk electrode experiments. In conclusion, for the HOR only Ni2Si shows limited activity, and the HER activity of the investigated silicides is considerably lower compared to other PGM-free HER catalysts reported in the literature. PMID:28773022

  9. Temperature and Stress Simulation of 4H-SiC during Laser-Induced Silicidation for Ohmic Contact Generation

    Directory of Open Access Journals (Sweden)

    Benedikt Adelmann


    Full Text Available We report here on the simulation of temperature and stress evolution of 4H-SiC during laser-induced silicidation to locally generate ohmic contacts between the semiconductor and nickel metallization. The simulation is based on optical free carrier absorption, thermal conduction, and thermal radiation. Our results show that, during laser irradiation, similar temperatures and correspondingly similar contact resistances, as compared to conventional oven-driven annealing processes, are achievable, yet with the advantageous potential to limit the temperature treatment spatially to the desired regions for electrical contacts and without the necessity of heating complete wafers. However, due to temperature gradients during local laser silicidation, thermal induced stress appears, which may damage the SiC wafer. Based on the simulated results for temperature and stress increase, we identify an optimized regime for laser-induced local silicidation and compare it to experimental data and observations.

  10. Intercalation synthesis of graphene-capped iron silicide atop Ni(111): Evolution of electronic structure and ferromagnetic ordering

    Energy Technology Data Exchange (ETDEWEB)

    Grebenyuk, G.S. [Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Vilkov, O.Yu.; Rybkin, A.G. [St. Petersburg State University, 199034 St. Petersburg (Russian Federation); Gomoyunova, M.V. [Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Senkovskiy, B.V. [St. Petersburg State University, 199034 St. Petersburg (Russian Federation); II. Physikalisches Institut, Universität zu Köln, D-50937 Cologne (Germany); Usachov, D.Yu. [St. Petersburg State University, 199034 St. Petersburg (Russian Federation); Vyalikh, D.V. [St. Petersburg State University, 199034 St. Petersburg (Russian Federation); Institute of Solid State Physics, Dresden University of Technology, 01062 Dresden (Germany); Molodtsov, S.L. [European XFEL GmbH, 22761 Hamburg (Germany); Institute of Experimental Physics, Technische Universität Bergakademie Freiberg, 09599 Freiberg (Germany); ITMO University, 197101 St. Petersburg (Russian Federation); Pronin, I.I., E-mail: [Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); ITMO University, 197101 St. Petersburg (Russian Federation)


    Highlights: • Evolution of Graphene/Ni system due to intercalation with Fe and Si is studied. • Graphene strongly interacts with the topmost atoms of the intercalated fcc Fe film. • The in-plane ferromagnetic ordering of the film arises after intercalation of 5 ML Fe. • Fe-Si solid solution and Fe{sub 3}Si surface silicide are formed after intercalation of Si. • The capping graphene layer is weakly electronically coupled to the silicide phase. - Abstract: A new method for synthesis of graphene-protected iron silicides has been tested, which consists in formation of graphene on Ni(111) followed by two-step intercalation of the system with Fe and Si. Characterization of the samples was performed in situ by low-energy electron diffraction, angular-resolved photoelectron spectroscopy, core-level photoelectron spectroscopy with synchrotron radiation and magnetic linear dichroism in photoemission of Fe 3p electrons. It is shown, that at 400 °C the intercalation of graphene/Ni(111) with iron occurs in a range up to 14 ML. The graphene layer strongly interacts with the topmost Fe atoms and stabilizes the fcc structure of the film. The in-plane ferromagnetic ordering of the film has a threshold nature and arises after the intercalation of 5 ML Fe due to the thickness-driven spin reorientation transition. Subsequent intercalation of graphene/Fe/Ni(111) with Si leads to the formation of the inhomogeneous system consisted of intercalated and nonintercalated areas. The intercalated islands coalesce at 2 ML Si when a Fe-Si solid solution covered with the Fe{sub 3}Si surface silicide is formed. The Fe{sub 3}Si silicide is ferromagnetic and has an ordered (√3 × √3)R30° structure. The graphene layer is weakly electronically coupled to the silicide phase keeping its remarkable properties ready for use.

  11. Formation, optical properties, and electronic structure of thin Yb silicide films on Si(111) (United States)

    Galkin, N. G.; Maslov, A. M.; Polyarnyi, V. O.


    Continuous very thin (2.5-3.0 nm) and thin (16-18 nm) ytterbium suicide films with some pinhole density (3×107- 1×108 cm-2) have been formed on Si(111) by solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE) growth methods on templates. The stoichiometric ytterbium suicide (YbSi2) formation has shown in SPE grown films by AES and EELS data. Very thin Yb suicide films grown by RDE method had the silicon enrichment in YbSi2 suicide composition. The analysis of LEED data and AFM imaging has shown that ytterbium suicide films had non-oriented blocks with the polycrystalline structure. The analysis of scanning region length dependencies of the root mean square roughness deviation (σR(L)) for grown suicide films has shown that the formation of ytterbium suicide in SPE and RDE growth methods is determined by the surface diffusion of Yb atoms during the three-dimensional growth process. Optical functions (n, k, α, ɛ1, ɛ2, Im ɛ1-1, neff, ɛeff) of ytterbium silicide films grown on Si(1 1 1) have been calculated from transmittance and reflectance spectra in the energy range of 0.1-6.2 eV. Two nearly discrete absorption bands have been observed in the electronic structure of Yb silicide films with different composition, which connected with interband transitions on divalent and trivalent Yb states. It was established that the reflection coefficient minimum in R-spectra at energies higher 4.2 eV corresponds to the state density minimum in Yb suicide between divalent and trivalent Yb states. It was shown from optical data that Yb silicide films have the semi-metallic properties with low state densities at energies less 0.4 eV and high state densities at 0.5-2.5 eV.

  12. Combustion synthesis of molybdenum silicides and borosilicides for ultrahigh-temperature structural applications (United States)

    Alam, Mohammad Shafiul

    Molybdenum silicides and borosilicides are promising structural materials for gas-turbine power plants. A major challenge, however, is to simultaneously achieve high oxidation resistance and acceptable mechanical properties at high temperatures. For example, molybdenum disilicide (MoSi2) has excellent oxidation resistance and poor mechanical properties, while Mo-rich silicides such as Mo5Si3 (called T 1) have much better mechanical properties but poor oxidation resistance. One approach is based on the fabrication of MoSi2-T 1 composites that combine high oxidation resistance of MoSi2 and good mechanical properties of T1. Another approach involves the addition of boron to Mo-rich silicides for improving their oxidation resistance through the formation of a borosilicate surface layer. In particular, Mo 5SiB2 (called T2) phase is considered as an attractive material. In the thesis, MoSi2-T1 composites and materials based on T2 phase are obtained by mechanically activated SHS. Use of SHS compaction (quasi-isostatic pressing) significantly improves oxidation resistance of the obtained MoSi2-T1 composites. Combustion of Mo-Si-B mixtures for the formation of T2 phase becomes possible if the composition is designed for the addition of more exothermic reactions leading to the formation of molybdenum boride. These mixtures exhibit spin combustion, the characteristics of which are in good agreement with the spin combustion theory. Oxidation resistance of the obtained Mo-Si-B materials is independent on the concentration of Mo phase in the products so that the materials with a higher Mo content are preferable because of better mechanical properties. Also, T2 phase has been obtained by the chemical oven combustion synthesis technique.

  13. X-ray photoemission spectromicroscopy of titanium silicide formation in patterned microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, S.; Solak, H.; Cerrina, F. [Univ. of Wisconsin-Madison, Stoughton, WI (United States)] [and others


    Titanium silicide has the lowest resistivity of all the refractory metal silicides and has good thermal stability as well as excellent compatibility with Al metallization. It is used as an intermediate buffer layer between W vias and the Si substrate to provide good electrical contact in ULSI technology, whose submicron patterned features form the basis of the integrated circuits of today and tomorrow, in the self aligned silicide (salicide) formation process. TiSi{sub 2} exists in two phases: a metastable C49 base-centered orthorhombic phase with specific resistivity of 60-90 {mu}{Omega}-cm that is formed at a lower temperature (formation anneal) and the stable 12-15 {mu}{Omega}-cm resistivity face-centered orthorhombic C54 phase into which C49 is transformed with a higher temperature (conversion anneal) step. C54 is clearly the target for low resistivity VLSI interconnects. However, it has been observed that when dimensions shrink below 1/mic (or when the Ti thickness drops below several hundred angstroms), the transformation of C49 into C54 is inhibited and agglomeration often occurs in fine lines at high temperatures. This results in a rise in resistivity due to incomplete transformation to C54 and because of discontinuities in the interconnect line resulting from agglomeration. Spectromicroscopy is an appropriate tool to study the evolution of the TiSi2 formation process because of its high resolution chemical imaging ability which can detect bonding changes even in the absence of changes in the relative amounts of species and because of the capability of studying thick {open_quotes}as is{close_quotes} industrial samples.

  14. In situ, real-time characterization of silicide nanostructure coarsening dynamics by photo-electron emission microscopy (United States)

    Zeman, Matthew Casimir

    Photo-electron emission microscopy (PEEM) was used to observe the growth and coarsening dynamics of transition metal (TM) silicide and rare earth (RE) silicide nanostructures on silicon surfaces in real-time with high lateral resolution during in situ annealing. Evidence was obtained indicating that the coarsening of the silicide islands is strongly influenced by local variations in the size, shape, and number of nanostructures on the surface. The titanium, hafnium, and zirconium silicide nanostructures were observed to grow via Ostwald ripening and attractive migration and coalescence (AMC) at temperatures as high as ~1200°C. Ostwald ripening is a classic coarsening process in which larger nanostructures grow at the expense of smaller surrounding structures as per the Gibbs-Thompson relation. Attractive migration and coalescence is a newly discovered coarsening pathway where nearby islands are observed to migrate attractively towards each other and subsequently coalesce in response to local adatom concentration variations on the surface. A shape distortion of the normally compact and rounded TM silicide islands has been observed during these coarsening processes. The shape distortion suggests that the nanostructures are exchanging mass with each other via diffusion limited processes and these observations support the AMC model. The dysprosium and erbium silicide nanostructures exhibit a distinct faceted morphology and primarily coarsen via Ostwald ripening. The RE silicides form highly elongated nanowires and compact rectangular nanostructures on Si(001) and triangular or hexagonal structures on Si(111). We show that the wires are metastable structures which decay in favor of the larger rectangular islands at high temperatures. Additionally, the rectangular shape and faceted morphology of the RE silicide nanostructures strongly influences their coarsening dynamics. A separate PEEM study explored the thermal stability of thin films of TM oxides (TiO2, ZrO2, HfO2

  15. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.


    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  16. Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation mode

    CSIR Research Space (South Africa)

    Pretorius, R


    Full Text Available stream_source_info pretorius_1993.pdf.txt stream_content_type text/plain stream_size 39978 Content-Encoding ISO-8859-1 stream_name pretorius_1993.pdf.txt Content-Type text/plain; charset=ISO-8859-1 Materials Chemistry... and Physics, 36 (1993) 31-38 31 Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation model R. Pretorius, C.C. Theron IonSolid Znteraction Division, Van de H.A. Ras and T...

  17. On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Fatima,; Hossain, Sehtab; Mohottige, Rasika; Oncel, Nuri, E-mail:, E-mail: [Department of Physics and Astrophysics, University of North Dakota, Grand Forks, North Dakota 58202 (United States); Can Oguz, Ismail; Gulseren, Oguz, E-mail:, E-mail: [Department of Physics, Bilkent University, Ankara (Turkey); Çakır, Deniz [Department of Physics, University of Antwerp, Antwerp 2610 (Belgium)


    Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires.

  18. Green light emission in aluminum oxide powders doped with different terbium concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Mariscal B, L; Falcony, C. [IPN, Centro de Investigacion y de Estudios Avanzados, 07360 Ciudad de Mexico (Mexico); Carmona T, S.; Murrieta, H.; Sanchez A, M. A. [UNAM, Instituto de Fisica, 04510 Ciudad de Mexico (Mexico); Vazquez A, R. [IPN, Escuela Superior de Computo, 07738 Ciudad de Mexico (Mexico); Garcia R, C. M., E-mail: [UNAM, Facultad de Ciencias, 04510 Ciudad de Mexico (Mexico)


    Different emission intensities presented in aluminum oxide phosphors corresponding to different concentrations of doping performed with terbium are analyzed. The phosphors were synthesized by the evaporation technique and were characterized by photo and cathodoluminescence, X-ray diffraction and EDS techniques for different incorporation percentages of terbium as dopant; they show characteristic transitions in 494, 543, 587 and 622 nm, corresponding to {sup 5}D{sub 4} → {sup 7}F{sub 6}, {sup 5}D{sub 4} → {sup 7}F{sub 5}, {sup 5}D{sub 4} → {sup 7}F{sub 4} and {sup 5}D{sub 4} → {sup 7}F{sub 3}, respectively when they are excited with λ{sub exc} = 380 nm wavelength at room temperature. The results of X-ray diffraction show the presence of α-Al{sub 2}O{sub 3} phases with peaks located at 2θ = 25.78, 35.34, 37.96, 43.56, 45.8, 52.74, 57.7, 61.5, 66.74, 68.44, 77.12 and 80.94, and the δ-Al{sub 2}O-3 phase 2θ = 32.82, 45.8, 61.36 and 66.74. These compounds were heat treated for two hours at 1100 degrees Celsius. EDS analyzes indicate that these compounds have close to 60% oxygen around of 40% aluminum in the presence of terbium as dopant which indicates a stoichiometry close to the expected one for alumina. (Author)

  19. Graphene quantum dots-terbium ions as novel sensitive and selective time-resolved luminescent probes. (United States)

    Llorent-Martínez, Eulogio J; Durán, Gema M; Ríos, Ángel; Ruiz-Medina, Antonio


    We propose an alternative approach for the development of analytical methods based on terbium-sensitized luminescence (TSL). TSL is based on the complexation between Tb(III) ions and fluorescent organic compounds that have appropriate functional groups to complex with Tb(III). We report the use of graphene quantum dot (GQDs) nanoparticles to improve the sensitivity and selectivity of TSL detection. GQDs can react with terbium ions through the carboxylic groups present in their structure. These Tb(III)-GQD complexes, formed in situ in aqueous solution, can be used as time-resolved luminescent probes. Ascorbic acid was selected as a target analyte to demonstrate the suitability of the proposed method. The selectivity of the TSL method was highly improved for most of the interferences tested. Under the optimum conditions [Tb(III) concentration 5 × 10-4 mol L-1, GQD concentration 4 mg L-1], a minimum 100% increase in selectivity was observed for several vitamins and common cations that may be present in the samples to be analyzed. In addition, the analytical signal showed a 30% enhancement with the use of GQDs compared with the use of merely Tb(III) ions, with a detection limit of 0.12 μg mL-1. The repeatability and intermediate precision were lower than 3% and 5%, respectively. From the results obtained, the implementation of GQDs in TSL can lead to the development of novel time-resolved luminescent probes with high analytical potential. Graphical abstract Quenching of Tb(III)-graphene quantum dot (GQD) luminescence by ascorbic acid (AA). TBL terbium-sensitized luminescence.

  20. Fluorescence study of some terbium-oligopeptide complexes in methanolic solution. (United States)

    Rabouan, S; Delage, J; Durand, W; Prognon, P; Barthes, D


    This study concerned the use of lanthanide chelates to detect glycyl-leucyl-phenylalanine (GLF) and its homologues. Spectroscopic analysis of peptides without or with terbium complexation revealed the formation of (LF)(3)(Tb)(2), (GF)(3)(Tb)(2), (GLF)(3)(Tb)(2) and (FL)(4)Tb, (FG)(4)Tb complexes with high stability constants in methanolic solutions (pK(d)>13). Lanthanide chelate emission displayed a large Stokes shift (>270 nm), which allowed Tb chelates of GLF and its derivatives to be used for detection purposes. However, this preliminary study indicated some important limitations associated with lanthanide chelation, such as high methanolic content.

  1. Electromagnetic properties of terbium gallium garnet at millikelvin temperatures and low photon energy (United States)

    Kostylev, Nikita; Goryachev, Maxim; Bushev, Pavel; Tobar, Michael E.


    Electromagnetic properties of single crystal terbium gallium garnet are characterised from room down to millikelvin temperatures using the whispering gallery mode method. Microwave spectroscopy is performed at low powers equivalent to a few photons in energy and conducted as functions of the magnetic field and temperature. A phase transition is detected close to the temperature of 3.5 K. This is observed for multiple whispering gallery modes causing an abrupt negative frequency shift and a change in transmission due to extra losses in the new phase caused by a change in complex magnetic susceptibility.

  2. Nuclear excitation functions from 40 to 200 MeV proton irradiation of terbium

    Energy Technology Data Exchange (ETDEWEB)

    Engle, Jonathan W., E-mail:; Mashnik, Stepan G.; Parker, Lauren A.; Jackman, Kevin R.; Bitteker, Leo J.; Ullmann, John L.; Gulley, Mark S.; Pillai, Chandra; John, Kevin D.; Birnbaum, Eva R.; Nortier, Francois M.


    Nuclear formation cross sections are reported for 26 radionuclides, measured with 40–200 MeV proton irradiations of terbium foils. These data provide the basis for the production of medically relevant radionuclides (e.g., {sup 152}Tb, {sup 155}Tb, {sup 155}Eu, and {sup 156}Eu) and {sup 153}Gd, a potential source used in ongoing efforts to characterize stellar nucleosynthesis routes. Computational predictions from the ALICE2011, CEM03.03, Bertini, and INCL + ABLA codes are compared with newly measured data to contribute to the ongoing process of code development, and yields are calculated for selected radionuclides using measured data.

  3. Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

    KAUST Repository

    Bahabry, Rabab R


    The Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.

  4. Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

    Energy Technology Data Exchange (ETDEWEB)

    Trivedi, Sudhir B. [Brimrose Technology Corporation; Kutcher, Susan W. [Brimrose Technology Corporation; Rosemeier, Cory A. [Brimrose Technology Corporation; Mayers, David [Brimrose Technology Corporation; Singh, Jogender [Pennsylvania State University


    Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult due to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.

  5. Silicon-germanium and platinum silicide nanostructures for silicon based photonics (United States)

    Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.


    This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

  6. Preparation and properties of sputtered nitrogen-doped cobalt silicide film

    Energy Technology Data Exchange (ETDEWEB)

    Ting, J.-H.; Shiau, S.-H.; Chen, Y.-J.; Pan, F.-M.; Wong Harianto; Pu, Gibson M.; Kung, C.-Y


    It is the purpose of this study to develop tough hinge material for the application of the torsional springs. Nitrogen-doped cobalt silicide (CoSi{sub x}N{sub y}) film is sputtered from cobalt silicide (CoSi{sub 2}) target in Ar/N{sub 2} discharge. Stress and sheet resistance of CoSi{sub x}N{sub y} film are two major properties to be evaluated. Taguchi method is practiced in reactive sputtering deposition of CoSi{sub x}N{sub y} film. Process pressure is most critical to the CoSi{sub x}N{sub y} film stress and the optimum condition of 1000 W, 0.8 Pa, and 20% N{sub 2} flow ratio, indeed results in low tensile CoSi{sub x}N{sub y} film stress, about 54. MPa. Reannealing process indicates that stability of CoSi{sub x}N{sub y} film is attained after first annealing process. Stress hysteresis behaviors of CoSi{sub x} and CoSi{sub x}N{sub y} films resemble that of metal film with a complete elastic manner in the second stage of heating and cooling. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses suggest that toughness and strength of the film is achievable. It is concluded that CoSi{sub x}N{sub y} film as a hinge material is feasible.

  7. Prediction of Stable Ruthenium Silicides from First-Principles Calculations: Stoichiometries, Crystal Structures, and Physical Properties. (United States)

    Zhang, Chuanzhao; Kuang, Xiaoyu; Jin, Yuanyuan; Lu, Cheng; Zhou, Dawei; Li, Peifang; Bao, Gang; Hermann, Andreas


    We present results of an unbiased structure search for stable ruthenium silicide compounds with various stoichiometries, using a recently developed technique that combines particle swarm optimization algorithms with first-principles calculations. Two experimentally observed structures of ruthenium silicides, RuSi (space group P2(1)3) and Ru2Si3 (space group Pbcn), are successfully reproduced under ambient pressure conditions. In addition, a stable RuSi2 compound with β-FeSi2 structure type (space group Cmca) was found. The calculations of the formation enthalpy, elastic constants, and phonon dispersions demonstrate the Cmca-RuSi2 compound is energetically, mechanically, and dynamically stable. The analysis of electronic band structures and densities of state reveals that the Cmca-RuSi2 phase is a semiconductor with a direct band gap of 0.480 eV and is stabilized by strong covalent bonding between Ru and neighboring Si atoms. On the basis of the Mulliken overlap population analysis, the Vickers hardness of the Cmca structure RuSi2 is estimated to be 28.0 GPa, indicating its ultra-incompressible nature.

  8. Preliminary investigations on the use of uranium silicide targets for fission Mo-99 production

    Energy Technology Data Exchange (ETDEWEB)

    Cols, H.; Cristini, P.; Marques, R.


    The National Atomic Energy Commission (CNEA) of Argentine Republic owns and operates an installation for production of molybdenum-99 from fission products since 1985, and, since 1991, covers the whole national demand of this nuclide, carrying out a program of weekly productions, achieving an average activity of 13 terabecquerel per week. At present they are finishing an enlargement of the production plant that will allow an increase in the volume of production to about one hundred of terabecquerel. Irradiation targets are uranium/aluminium alloy with 90% enriched uranium with aluminium cladding. In view of international trends held at present for replacing high enrichment uranium (HEU) for enrichment values lower than 20 % (LEU), since 1990 the authors are in contact with the RERTR program, beginning with tests to adapt their separation process to new irradiation target conditions. Uranium silicide (U{sub 3}Si{sub 2}) was chosen as the testing material, because it has an uranium mass per volume unit, so that it allows to reduce enrichment to a value of 20%. CNEA has the technology for manufacturing miniplates of uranium silicide for their purposes. In this way, equivalent amounts of Molybdenum-99 could be obtained with no substantial changes in target parameters and irradiation conditions established for the current process with Al/U alloy. This paper shows results achieved on the use of this new target.

  9. Plasma-enhanced deposition and processing of transition metals and transition metal silicides for VLSI (United States)

    Hess, D. W.


    Radiofrequency (rf) discharges have been used to deposit films of tungsten, molybdenum and titanium silicide. As-deposited tungsten films, from tungsten hexafluoride and hydrogen source gases, were metastable (beta W), with significant (>1 atomic percent) fluorine incorporation. Film resistivities were 40-55 micro ohm - cm due to the beta W, but dropped to about 8 micro ohm cm after a short heat treatment at 700 C which resulted in a phase transition to alpha W (bcc form). The high resistivity (>10,000 micro ohm) associated with molybdenum films deposited from molybdenum hexafluoride and hydrogen appeared to be a result of the formation of molybdenum trifluoride in the deposited material. Titanium silicide films formed from a discharge of titanium tetrachloride, silane, and hydrogen, displayed resistivities of about 150 micro ohm cm, due to small amounts of oxygen and chlorine incorporated during deposition. Plasma etching studies of tungsten films with fluorine containing gases suggest that the etchant species for tungsten in these discharges are fluorine atoms.

  10. Two-dimensional electronic structure of dysprosium silicide nanowires on Si(557)

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina; Loeser, Karolin; Pruskil, Gerd; Daehne, Mario [Institute of Solid State Physics, Technical University Berlin (Germany); Stojanov, Petar; Huwald, Eric; Riley, John [School of Physics, La Trobe University, Bundoora, VIC (Australia)


    Rare earth silicide nanostructures are of high interest because of their extremely low Schottky barriers on n-Si(111) and the formation of nanowires with one-dimensional metallicity on Si(001). In this work, the self-organized growth of monolayer-thick dysprosium silicide nanowires on Si(557) has been studied by scanning tunnelling microscopy and angle-resolved photoelectron spectroscopy. The bare Si(557) surface is characterized by (111) and (112) facets. Accordingly, we observed the nanowires forming on the (111) facets. For coverages of 2A dysprosium, nanowire lengths exceeding 1{mu}m and widths around 5 nm were found. Their electronic structure shows a strong dispersion both parallel and perpendicular to the nanowires, which is assigned to the band structure of DySi{sub 2} monolayers on Si(111). At higher coverages similar nanowires are observed at the (111) facets, which show characteristic structural properties of the multilayer growth and also the Dy{sub 3}Si{sub 5} multilayer band structure.

  11. Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction (United States)


    This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation. PMID:23663726

  12. Formation of Mg silicides on amorphous Si. Origin and role of high pressure in the film growth

    Energy Technology Data Exchange (ETDEWEB)

    Dotsenko, S.A. [Institute for Automation and Control Processes, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, Physics Dpt., 8 Sukhanova Str., Vladivostok 690950 (Russian Federation); Gouralnik, A.S., E-mail: [Institute for Automation and Control Processes, 5 Radio St., Vladivostok 690041 (Russian Federation); Galkin, N.G. [Institute for Automation and Control Processes, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, Physics Dpt., 8 Sukhanova Str., Vladivostok 690950 (Russian Federation); Galkin, K.N. [Institute for Automation and Control Processes, 5 Radio St., Vladivostok 690041 (Russian Federation); Gutakovski, A.K.; Neklyudova, M.A. [Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, Lavrentiev Av., Novosibirsk (Russian Federation)


    Growth of Mg film on amorphous Si (a-Si) at room temperature in UHV conditions was studied in situ with optical differential reflection spectroscopy and electron energy loss spectroscopy. The phase composition of the film was also studied by high-resolution transmission electron microscopy. The mechanism of silicide film growth on a-Si is considered. The origin of internal stress within the growing film and its role in the silicide film growth process are discussed. Due to high pressure occurring within the growing film, the first phase to form is the hexagonal silicide phase h-Mg{sub 2}Si. According to the DRS data, the phase h-Mg{sub 2}Si is semiconducting. The new peak in the differential reflectance spectrum is assigned to the h-Mg{sub 2}Si. At later stages of Mg deposition the cubic silicide phase c-Mg{sub 2}Si grows. - Highlights: • The film growth by UHV deposition of Mg on amorphous Si layer was studied. • Two Mg{sub 2}Si phases, hexagonal and cubic, were formed on amorphous Silicon. • The metastable h-Mg{sub 2}Si forms first, due to very high stress inside the film. • The stress is induced by chemical forces during intermixing of Mg with Si. • The film growth stages are clearly seen by Differential Reflectance Spectroscopy.

  13. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology. (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi


    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  14. Micelle-enhanced and terbium-sensitized spectrofluorimetric determination of gatifloxacin and its interaction mechanism (United States)

    Guo, Changchuan; Wang, Lei; Hou, Zhun; Jiang, Wei; Sang, Lihong


    A terbium-sensitized spectrofluorimetric method using an anionic surfactant, sodium dodecyl benzene sulfonate (SDBS), was developed for the determination of gatifloxacin (GFLX). A coordination complex system of GFLX-Tb 3+-SDBS was studied. It was found that SDBS significantly enhanced the fluorescence intensity of the complex (about 11-fold). Optimal experimental conditions were determined as follows: excitation and emission wavelengths of 331 and 547 nm, pH 7.0, 2.0 × 10 -4 mol l -1 terbium (III), and 2.0 × 10 -4 mol l -1 SDBS. The enhanced fluorescence intensity of the system (Δ If) showed a good linear relationship with the concentration of GFLX over the range of 5.0 × 10 -10 to 5.0 × 10 -8 mol l -1 with a correlation coefficient of 0.9996. The detection limit (3 σ) was determined as 6.0 × 10 -11 mol l -1. This method has been successfully applied to the determination of GFLX in pharmaceuticals and human urine/serum samples. Compared with most of other methods reported, the rapid and simple procedure proposed in the text offers higher sensitivity, wider linear range, and better stability. The interaction mechanism of the system is also studied by the research of ultraviolet absorption spectra, surface tension, solution polarity and fluorescence polarization.

  15. Circularly Polarized Luminescence in Enantiopure Europium and Terbium Complexes with Modular, All-Oxygen Donor Ligands (United States)

    Seitz, Michael; Do, King; Ingram, Andrew J.; Moore, Evan G.; Muller, Gilles; Raymond, Kenneth N.


    Abstract: Circulaly polarized luminescence from terbium(III) complexed and excited by chiral antenna ligands gives strong emission The modular synthesis of three new octadentate, enantiopure ligands are reported - one with the bidentate chelating unit 2-hydroxyisophthalamide (IAM) and two with 1-hydroxy-2-pyridinone (1,2-HOPO) units. A new design principle is introduced for the chiral, non-racemic hexamines which constitute the central backbones for the presented class of ligands. The terbium(III) complex of the IAM ligand, as well as the europium(III) complexes of the 1,2-HOPO ligands are synthesized and characterized by various techniques (NMR, UV, CD, luminescence spectroscopy). All species exhibit excellent stability and moderate to high luminescence efficiency (quantum yields ΦEu = 0.05–0.08 and ΦTb = 0.30–0.57) in aqueous solution at physiological pH. Special focus is put onto the properties of the complexes in regard to circularly polarized luminescence (CPL). The maximum luminescence dissymmetry factors (glum) in aqueous solution are high with |glum|max = 0.08 – 0.40. Together with the very favorable general properties (good stability, high quantum yields, long lifetimes), the presented lanthanide complexes can be considered as good candidates for analytical probes based on CPL in biologically relevant environments. PMID:19639983

  16. Understanding and Improving High-Temperature Structural Properties of Metal-Silicide Intermetallics

    Energy Technology Data Exchange (ETDEWEB)

    Bruce S. Kang


    The objective of this project was to understand and improve high-temperature structural properties of metal-silicide intermetallic alloys. Through research collaboration between the research team at West Virginia University (WVU) and Dr. J.H. Schneibel at Oak Ridge National Laboratory (ORNL), molybdenum silicide alloys were developed at ORNL and evaluated at WVU through atomistic modeling analyses, thermo-mechanical tests, and metallurgical studies. In this study, molybdenum-based alloys were ductilized by dispersing MgAl2O4 or MgO spinel particles. The addition of spinel particles is hypothesized to getter impurities such as oxygen and nitrogen from the alloy matrix with the result of ductility improvement. The introduction of fine dispersions has also been postulated to improve ductility by acting as a dislocation source or reducing dislocation pile-ups at grain boundaries. The spinel particles, on the other hand, can also act as local notches or crack initiation sites, which is detrimental to the alloy mechanical properties. Optimization of material processing condition is important to develop the desirable molybdenum alloys with sufficient room-temperature ductility. Atomistic analyses were conducted to further understand the mechanism of ductility improvement of the molybdenum alloys and the results showed that trace amount of residual oxygen may be responsible for the brittle behavior of the as-cast Mo alloys. For the alloys studied, uniaxial tensile tests were conducted at different loading rates, and at room and elevated temperatures. Thermal cycling effect on the mechanical properties was also studied. Tensile tests for specimens subjected to either ten or twenty thermal cycles were conducted. For each test, a follow-up detailed fractography and microstructural analysis were carried out. The test results were correlated to the size, density, distribution of the spinel particles and processing time. Thermal expansion tests were carried out using thermo

  17. Luminescent method of determination of composition of europium and terbium complexes in solution by change of intensity ratio of luminescence bands

    Energy Technology Data Exchange (ETDEWEB)

    Bel' tyukova, S.V.; Nazarenko, N.A.; Poluehktov, N.S.


    The complexes of europium and terbium with phenanthroline, ethylenediaminetetraacetate, nitrilotriacetate, some acids-phenol derivatives and ..beta..-diketones series have been used as an example to demonstrate that the value of the ratio of intensities on the two bands of europium(terbium) luminescence spectra - the one corresponding to the hypersensitive'' transition and the other, to the magnetic dipole one - can be used for determination of the complexes composition in solutions.

  18. Chemical vapour deposition of tungsten and tungsten silicide layers for applications in novel silicon technology

    CERN Document Server

    Li, F X


    This work was a detailed investigation into the Chemical Vapour Deposition (CVD) of tungsten and tungsten silicide for potential applications in integrated circuit (IC) and other microelectronic devices. These materials may find novel applications in contact schemes for transistors in advanced ICs, buried high conductivity layers in novel Silicon-On-Insulator (SOI) technology and in power electronic devices. The CVD techniques developed may also be used for metal coating of recessed or enclosed features which may occur in novel electronic or electromechanical devices. CVD of tungsten was investigated using the silicon reduction reaction of WF sub 6. W layers with an optimum self-limiting thickness of 100 nm and resistivity 20 mu OMEGA centre dot cm were produced self-aligned to silicon. A hydrogen passivation technique was developed as part of the wafer pre-clean schedule and proved essential in achieving optimum layer thickness. Layers produced by this approach are ideal for intimate contact to shallow junct...

  19. Hydrogen generation systems utilizing sodium silicide and sodium silica gel materials (United States)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael


    Systems, devices, and methods combine reactant materials and aqueous solutions to generate hydrogen. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Multiple inlets of varied placement geometries deliver aqueous solution to the reaction. The reactant materials and aqueous solution are churned to control the state of the reaction. The aqueous solution can be recycled and returned to the reaction. One system operates over a range of temperatures and pressures and includes a hydrogen separator, a heat removal mechanism, and state of reaction control devices. The systems, devices, and methods of generating hydrogen provide thermally stable solids, near-instant reaction with the aqueous solutions, and a non-toxic liquid by-product.

  20. Hydrogen generation systems and methods utilizing sodium silicide and sodium silica gel materials

    Energy Technology Data Exchange (ETDEWEB)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael


    Systems, devices, and methods combine thermally stable reactant materials and aqueous solutions to generate hydrogen and a non-toxic liquid by-product. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Springs and other pressurization mechanisms pressurize and deliver an aqueous solution to the reaction. A check valve and other pressure regulation mechanisms regulate the pressure of the aqueous solution delivered to the reactant fuel material in the reactor based upon characteristics of the pressurization mechanisms and can regulate the pressure of the delivered aqueous solution as a steady decay associated with the pressurization force. The pressure regulation mechanism can also prevent hydrogen gas from deflecting the pressure regulation mechanism.

  1. Friction and wear of radiofrequency-sputtered borides, silicides, and carbides (United States)

    Brainard, W. A.; Wheeler, D. R.


    The friction and wear properties of several refractory compound coatings were examined. These compounds were applied to 440 C bearing steel surfaces by radiofrequency (RF) sputtering. The refractory compounds were the titanium and molybdenum borides, the titanium and molybdenum silicides, and the titanium, molybdenum, and boron carbides. Friction testing was done with a pin-on-disk wear apparatus at loads from 0.1 to 5.0 newtons. Generally, the best wear properties were obtained when the coatings were bias sputtered onto 440 C disks that had been preoxidized. Adherence was improved because of the better bonding of the coatings to the iron oxide formed during preoxidation. As a class the carbides provided wear protection to the highest loads. Titanium boride coatings provided low friction and good wear properties to moderate loads.

  2. Hydrogen generation systems and methods utilizing sodium silicide and sodium silica gel materials (United States)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael


    Systems, devices, and methods combine thermally stable reactant materials and aqueous solutions to generate hydrogen and a non-toxic liquid by-product. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Springs and other pressurization mechanisms pressurize and deliver an aqueous solution to the reaction. A check valve and other pressure regulation mechanisms regulate the pressure of the aqueous solution delivered to the reactant fuel material in the reactor based upon characteristics of the pressurization mechanisms and can regulate the pressure of the delivered aqueous solution as a steady decay associated with the pressurization force. The pressure regulation mechanism can also prevent hydrogen gas from deflecting the pressure regulation mechanism.

  3. Hydrogen generation systems utilizing sodium silicide and sodium silica gel materials

    Energy Technology Data Exchange (ETDEWEB)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael


    Systems, devices, and methods combine reactant materials and aqueous solutions to generate hydrogen. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Multiple inlets of varied placement geometries deliver aqueous solution to the reaction. The reactant materials and aqueous solution are churned to control the state of the reaction. The aqueous solution can be recycled and returned to the reaction. One system operates over a range of temperatures and pressures and includes a hydrogen separator, a heat removal mechanism, and state of reaction control devices. The systems, devices, and methods of generating hydrogen provide thermally stable solids, near-instant reaction with the aqueous solutions, and a non-toxic liquid by-product.

  4. Discovery of Brownleeite: a New Manganese Silicide Mineral in an Interplanetary Dust Particle (United States)

    Keller, Lindsay P.; Nakamura-Messenger, Keiko; Clemett, Simon J.; Messenger, Scott; Jones, John H.; Palma, Russell L.; Pepin, Robert O.; Klock, Wolfgang; Zolensky, Michael E.; Tatsuoka, Hirokazu


    The Earth accretes approximately 40,000 tons of cosmic dust annually, originating mainly from the disintegration of comets and collisions among asteroids. This cosmic dust, also known as interplanetary dust particles (IDPs), is a subject of intense interest since it is made of the original building blocks of our Solar System. Although the specific parent bodies of IDPs are unknown, the anhydrous chondritic-porous IDPs (CP-IDPs) subset has been potentially linked to a cometary source. The CP-IDPs are extremely primitive materials based on their unequilibrated mineralogy, C-rich chemistry, and anomalous isotopic signatures. In particular, some CP-IDPs escaped the thermal, aqueous and impact shock processing that has modified or destroyed the original mineralogy of meteorites. Thus, the CP-IDPs represent some of the most primitive solar system materials available for laboratory study. Most CP-IDPs are comprised of minerals that are common on Earth. However, in the course of an examination of one of the CP-IDPs, we encountered three sub-micrometer sized grains of manganese silicide (MnSi), a phase that has heretofore not been found in nature. In the seminar, we would like to focus on IDP studies and this manganese silicide phase that has been approved as the first new mineral identified from a comet by the International Mineralogical Association (IMA) in 2008. The mineral is named in honour of Donald E. Brownlee, an American astronomer and a founder of the field of cosmic dust research who is the principal investigator of the NASA Stardust Mission that collected dust samples from Comet 81P/Wild-2 and returned them to Earth. Much of our current view and understanding of the early solar system would not exist without the pioneering work of professor Don Brownlee in the study of IDPs.

  5. Characterisation of amorphous molybdenum silicide (MoSi) superconducting thin films and nanowires (United States)

    Banerjee, Archan; Baker, Luke J.; Doye, Alastair; Nord, Magnus; Heath, Robert M.; Erotokritou, Kleanthis; Bosworth, David; Barber, Zoe H.; MacLaren, Ian; Hadfield, Robert H.


    We report on the optimisation of amorphous molybdenum silicide thin film growth for superconducting nanowire single-photon detector (SNSPD) applications. Molybdenum silicide was deposited via co-sputtering from Mo and Si targets in an Ar atmosphere. The superconducting transition temperature (T c) and sheet resistance (R s) were measured as a function of thickness and compared to several theoretical models for disordered superconducting films. Superconducting and optical properties of amorphous materials are very sensitive to short- (up to 1 nm) and medium-range order (˜1-3 nm) in the atomic structure. Fluctuation electron microscopy studies showed that the films assumed an A15-like medium-range order. Electron energy loss spectroscopy indicates that the film stoichiometry was close to Mo83Si17, which is consistent with reports that many other A15 structures with the nominal formula A 3 B show a significant non-stoichiometry with A:B > 3:1. Optical properties from ultraviolet (270 nm) to infrared (2200 nm) wavelengths were measured via spectroscopic ellipsometry for 5 nm thick MoSi films indicating high long wavelength absorption. We also measured the current density as a function of temperature for nanowires patterned from a 10 nm thick MoSi film. The current density at 3.6 K is 3.6 × 105 A cm-2 for the widest wire studied (2003 nm), falling to 2 × 105 A cm-2 for the narrowest (173 nm). This investigation confirms the excellent suitability of MoSi for SNSPD applications and gives fresh insight into the properties of the underlying materials.

  6. Thermo-transferred thermoluminescence (TTTl) in potassium-yttrium double fluoride doped with terbium

    Energy Technology Data Exchange (ETDEWEB)

    Gallegos, A.; Rivera, T.; Diaz G, J. A. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Legaria 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Azorin, J. [Universidad Autonoma Metropolitana, Unidad Iztapalapa, San Rafael Atlixco No. 186, Col. Vicentina, 09340 Mexico D. F. (Mexico); Azorin, J. C. [Universidad de Guanajuato, Division de Ciencias e Ingenierias-Campus Leon, Lomas del Bosque No. 103, Col. Lomas del Campestre, 37000 Leon, Guanajuato (Mexico); Licona, R.; Rivas, F.; Hernandez C, G. [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias Quimicas, 14 Sur y San Claudio, Ciudad Universitaria, Puebla de Zaragoza, Puebla (Mexico); Khaidukov, N. [Institute of General and Inorganic Chemistry, Lenin SK 11 Prospect 31, Moscow 117907 (Russian Federation)


    This paper presents results of studying the thermo-transferred thermoluminescence (TTTl) phenomenon in potassium-yttrium double fluoride doped with terbium (K{sub 2}YF{sub 5:}Tb) at different impurity concentrations (0.8%, 0.95% and 0.99%). Previously to study the TTTl phenomenon, structural characterization and chemical composition of the materials were determined. The structural studies were conducted using a scanning electron microscope; meanwhile, chemical composition was analyzed using energy dispersive X-ray spectroscopy. Thermoluminescence kinetics was studied irradiating the samples with {sup 137}Cs gamma rays as well as with {sup 90}Sr/{sup 90}Y beta rays, analyzing the glow curves by the deconvolution method for obtaining the kinetic parameters. (Author)

  7. The influence of pressure on the photoluminescence properties of a terbium-adipate framework (United States)

    Spencer, Elinor C.; Zhao, Jing; Ross, Nancy L.; Andrews, Michael B.; Surbella, Robert G.; Cahill, Christopher L.


    The influence of pressure (over the 0-4.7 GPa range) on the photoluminescence emissions and crystal structure of the known 3D terbium-adipate metal-organic framework material Tb-GWMOF6 has been evaluated by high-pressure single-crystal X-ray diffraction and spectroscopic techniques. The results from this study show that this complex lanthanide framework structure undergoes three phase transitions within the 0-4 GPa pressure range that involve alterations in the number of symmetry independent Tb3+ ion sites within the crystal lattice. These pressure induced modifications to the structure of Tb-GWMOF6 lead to pronounced changes in the profiles of the 5D4→7F5 emission spectra of this complex.

  8. Terbium Radionuclides for Theranostics Applications: A Focus On MEDICIS-PROMED (United States)

    Cavaier, R. Formento; Haddad, F.; Sounalet, T.; Stora, T.; Zahi, I.

    A new facility, named CERN-MEDICIS, is under construction at CERN to produce radionuclides for medical applications. In parallel, the MEDICIS-PROMED, a Marie Sklodowska-Curie innovative training network of the Horizon 2020 European Commission's program, is being coordinated by CERN to train young scientists on the production and use of innovative radionuclides and develop a network of experts within Europe. One program within MEDICIS-PROMED is to determine the feasibility of producing innovative radioisotopes for theranostics using a commercial middle-sized high-current cyclotron and the mass separation technology developed at CERN-MEDICIS. This will allow the production of high specific activity radioisotopes not achievable with the common post-processing by chemical separation. Radioisotopes of scandium, copper, arsenic and terbium have been identified. Preliminary studies of activation yield and irradiation parameters optimization for the production of Tb-149 will be described.

  9. Dielectric and conducting behavior of gadolinium-terbium fumarate heptahydrate crystals (United States)

    Shah, M. D.; Want, B.


    Gadolinium-terbium fumarate heptahydrate crystals were grown in silica gel by using single gel diffusion technique. The crystals were characterized by different physico-chemical techniques of characterization. Powder X-ray diffraction results showed that the grown material is purely crystalline in nature. Elemental analyses suggested the chemical formula of the compound to be Gd Tb (C4H2O4)3ṡ7H2O. Energy dispersive X-ray analysis confirmed the presence of Gd and Tb in the title compound. The dielectric and conductivity studies of the grown compound were carried as function of frequency of applied field and the temperature. The grown material showed a dielectric anomaly which was correlated with its thermal behavior. The ac conductivity of the material showed Jonscher's power law behavior: σ(ω)=σo+Aωs, with a temperature-dependent power exponent s(<1). The conductivity was found to be a function of temperature and frequency.

  10. Highly sensitive detection of dipicolinic acid with a water-dispersible terbium-metal organic framework. (United States)

    Bhardwaj, Neha; Bhardwaj, Sanjeev; Mehta, Jyotsana; Kim, Ki-Hyun; Deep, Akash


    The sensitive detection of dipicolinic acid (DPA) is strongly associated with the sensing of bacterial organisms in food and many types of environmental samples. To date, the demand for a sensitive detection method for bacterial toxicity has increased remarkably. Herein, we investigated the DPA detection potential of a water-dispersible terbium-metal organic framework (Tb-MOF) based on the fluorescence quenching mechanism. The Tb-MOF showed a highly sensitive ability to detect DPA at a limit of detection of 0.04nM (linear range of detection: 1nM to 5µM) and also offered enhanced selectivity from other commonly associated organic molecules. The present study provides a basis for the application of Tb-MOF for direct, convenient, highly sensitive, and specific detection of DPA in the actual samples. Copyright © 2016 Elsevier B.V. All rights reserved.

  11. A New Bis(phthalocyaninato) Terbium Single-Ion Magnet with an Overall Excellent Magnetic Performance. (United States)

    Chen, Yuxiang; Ma, Fang; Chen, Xiaoxiang; Dong, Bowei; Wang, Kang; Jiang, Shangda; Wang, Chiming; Chen, Xin; Qi, Dongdong; Sun, Haoling; Wang, Bingwu; Gao, Song; Jiang, Jianzhuang


    Bulky and strong electron-donating dibutylamino groups were incorporated onto the peripheral positions of one of the two phthalocyanine ligands in the bis(phthalocyaninato) terbium complex, resulting in the isolation of heteroleptic double-decker (Pc)Tb{Pc[N(C4H9)2]8} {Pc = phthalocyaninate; Pc[N(C4H9)2]8 = 2,3,9,10,16,17,23,24-octakis(dibutylamino)phthalocyaninate} with the nature of an unsymmetrical molecular structure, a square-antiprismatic coordination geometry, an intensified coordination field strength, and the presence of organic radical-f interaction. As a total result of all these factors, this sandwich-type tetrapyrrole lanthanide single-ion magnet (SIM) exhibits an overall enhanced magnetic performance including a high blocking temperature (TB) of 30 K and large effective spin-reversal energy barrier of Ueff = 939 K, rendering it the best sandwich-type tetrapyrrole lanthanide SIM reported thus far.

  12. Ultralarge magneto-optic rotations and rotary dispersion in terbium gallium garnet single crystal. (United States)

    Shaheen, Amrozia; Majeed, Hassaan; Anwar, Muhammad Sabieh


    We report systematically acquired data on the Verdet constant of terbium gallium garnet for wavelengths ranging from visible to near-infrared (405-830 nm) regime. Our experimental method of Stokes polarimetry is based on the Fourier decomposition of the received light intensity and allows unambiguous determination of both the Faraday rotation and the ellipticity of the emergent light. Temperature-dependent investigations in the range of 8-300 K extend earlier reports and verify the Verdet's constant direct dependence on the magnetization, whose first-order approximation is simply a manifestation of the Curie's law. Further, a least-squares fitting of the experimental data correlates well with theoretical predictions. At a wavelength of 405 nm and temperature of 8 K, the rotation is approximately 500°.

  13. Terbium fluorescence as a sensitive, inexpensive probe for UV-induced damage in nucleic acids

    Energy Technology Data Exchange (ETDEWEB)

    El-Yazbi, Amira F.; Loppnow, Glen R., E-mail:


    Graphical abstract: -- Highlights: •Simple, inexpensive, mix-and-read assay for positive detection of DNA damage. •Recognition of undamaged DNA via hybridization to a hairpin probe. •Terbium(III) fluorescence reports the amount of damage by binding to ssDNA. •Tb/hairpin is a highly selective and sensitive fluorescent probe for DNA damage. -- Abstract: Much effort has been focused on developing methods for detecting damaged nucleic acids. However, almost all of the proposed methods consist of multi-step procedures, are limited, require expensive instruments, or suffer from a high level of interferences. In this paper, we present a novel simple, inexpensive, mix-and-read assay that is generally applicable to nucleic acid damage and uses the enhanced luminescence due to energy transfer from nucleic acids to terbium(III) (Tb{sup 3+}). Single-stranded oligonucleotides greatly enhance the Tb{sup 3+} emission, but duplex DNA does not. With the use of a DNA hairpin probe complementary to the oligonucleotide of interest, the Tb{sup 3+}/hairpin probe is applied to detect ultraviolet (UV)-induced DNA damage. The hairpin probe hybridizes only with the undamaged DNA. However, the damaged DNA remains single-stranded and enhances the intrinsic fluorescence of Tb{sup 3+}, producing a detectable signal directly proportional to the amount of DNA damage. This allows the Tb{sup 3+}/hairpin probe to be used for sensitive quantification of UV-induced DNA damage. The Tb{sup 3+}/hairpin probe showed superior selectivity to DNA damage compared to conventional molecular beacons probes (MBs) and its sensitivity is more than 2.5 times higher than MBs with a limit of detection of 4.36 ± 1.2 nM. In addition, this probe is easier to synthesize and more than eight times cheaper than MBs, which makes its use recommended for high-throughput, quantitative analysis of DNA damage.

  14. Fine- and hyperfine structure investigations of even configuration system of atomic terbium (United States)

    Stefanska, D.; Elantkowska, M.; Ruczkowski, J.; Furmann, B.


    In this work a parametric study of the fine structure (fs) and the hyperfine structure (hfs) for the even-parity configurations of atomic terbium (Tb I) is presented, based in considerable part on the new experimental results. Measurements on 134 spectral lines were performed by laser induced fluorescence (LIF) in a hollow cathode discharge lamp; on this basis, the hyperfine structure constants A and B were determined for 52 even-parity levels belonging to the configurations 4f85d6s2, 4f85d26s or 4f96s6p; in all the cases those levels were involved in the transitions investigated as the lower levels. For 40 levels the hfs was examined for the first time, and for the remaining 12 levels the new measurements supplement our earlier results. As a by-product, also preliminary values of the hfs constants for 84 odd-parity levels were determined (the investigations of the odd-parity levels system in the terbium atom are still in progress). This huge amount of new experimental data, supplemented by our earlier published results, were considered for the fine and hyperfine structure analysis. A multi-configuration fit of 7 configurations was performed, taking into account second-order of perturbation theory, including the effects of closed shell-open shell excitations. Predicted values of the level energies, as well as of magnetic dipole and electric quadrupole hyperfine structure constants A and B, are quoted in cases when no experimental values are available. By combining our experimental data with our own semi-empirical procedure it was possible to identify correctly the lower and upper level of the line 544.1440 nm measured by Childs with the use of the atomic-beam laser-rf double-resonance technique (Childs, J Opt Soc Am B 9;1992:191-6).

  15. Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties. (United States)

    Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Huang, Yu-Ting; Hu, Jung-Chih; Chen, Lien-Tai; Hsin, Cheng-Lun; Wu, Wen-Wei


    Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.

  16. Electronic structures of platinum group elements silicides calculated by a first-principle pseudopotential method using plane-wave basis

    Energy Technology Data Exchange (ETDEWEB)

    Imai, Y. [National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 5, Higashi 1-1 Tsukuba, Ibaraki 305-8565 (Japan); Watanabe, A. [National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 5, Higashi 1-1 Tsukuba, Ibaraki 305-8565 (Japan)


    The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.

  17. High Temperature Silicides and Refractory Alloys Symposium Held in Boston, Massachusetts on November 29 -December 2, 1993. Volume 322 (United States)


    MECHANICAL BEHAVIOR OF Nb-Ti BASE BETA + SILICIDE ALLOYS . ................................... 491 P.R. Subramanian, M.G. Mendiratta, and D.M. Dimiduk...above -1300°C, the amorphous silica can transform to a- cristobalite . The oxygen diffusivity will change as the structure of the silica changes, and...first 10 to 40 hours. After 100 hours of oxidation, the XRD analysis shows that the oxide layer is cristobalite , the stable crystalline phase of silica

  18. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi


    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759

  19. Evaluation of powder metallurgical processing routes for multi-component niobium silicide-based high-temperature alloys

    Energy Technology Data Exchange (ETDEWEB)

    Seemueller, Hans Christoph Maximilian


    Niobium silicide-based composites are potential candidates to replace nickel-base superalloys for turbine applications. The goal of this work was to evaluate the feasibility and differences in ensuing properties of various powder metallurgical processing techniques that are capable of manufacturing net-shape turbine components. Two routes for powder production, mechanical alloying and gas atomization were combined with compaction via hot isostatic pressing and powder injection molding.

  20. Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells (United States)

    Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios


    Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

  1. Pack cementation Cr-Al coating of steels and Ge-doped silicide coating of Cr-Nb alloy

    Energy Technology Data Exchange (ETDEWEB)

    He, Y.R.; Zheng, M.H.; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States)


    Carbon steels or low-alloy steels used in utility boilers, heat exchangers, petrochemical plants and coal gasification systems are subjected to high temperature corrosion attack such as oxidation, sulfidation and hot corrosion. The pack cementation coating process has proven to be an economical and effective method to enhance the corrosion resistance by modifying the surface composition of steels. With the aid of a computer program, STEPSOL, pack cementation conditions to produce a ferrite Cr-Al diffusion coating on carbon-containing steels by using elemental Cr and Al powders have been calculated and experimentally verified. The cyclic oxidation kinetics for the Cr-Al coated steels are presented. Chromium silicide can maintain high oxidation resistance up to 1100{degrees}C by forming a SiO{sub 2} protective scale. Previous studies at Ohio State University have shown that the cyclic oxidation resistance of MOSi{sub 2} and TiSi{sub 2} can be further improved by Ge addition introduced during coating growth. The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating in a single processing step for the ORNL-developed Cr-Nb advanced intermetallic alloy. The oxidation behavior of the silicide-coated Cr-Nb alloy was excellent: weight gain of about 1 mg/cm{sup 2} upon oxidation at 1100{degrees}C in air for 100 hours.

  2. Structural and optical characterization of terbium doped ZnGa2O4 thin films deposited by RF magnetron sputtering (United States)

    Somasundaram, K.; Girija, K. G.; Sudarsan, V.; Selvin, P. Christopher; Vatsa, R. K.


    Tb3+ doped ZnGa2O4 nanophosphor (21 nm) has been synthesized via low temperature polyol route and subsequently thin films of the same were deposited on glass and ITO substrates by RF magnetron sputtering. The films were characterized by X-ray Diffraction and luminescence measurements. The XRD pattern showed that Tb3+ doped ZnGa2O4 nanophosphor has a cubic spinel phase. Luminescence behavior of the nanophosphor and as deposited sputtered film was investigated. The PL emission spectra of nanophosphor gave a broad ZnGa2O4 host emission band along with a strong terbium emission and the thin films showed only broad host emission band and there was no terbium ion emission.

  3. Determination of fluoxetine in pharmaceutical and biological samples based on the silver nanoparticle enhanced fluorescence of fluoxetine-terbium complex. (United States)

    Lotfi, Ali; Manzoori, Jamshid L


    In this study, a simple and sensitive spectrofluorimetric method is presented for the determination of fluoxetine based on the enhancing effect of silver nanoparticles (AgNPs) on the terbium-fluoxetine fluorescence emission. The AgNPs were prepared by a simple reduction method and characterized by UV-Vis spectroscopy and transmission electron microscopy. It was indicated that these AgNPs have a remarkable amplifying effect on the terbium-sensitized fluorescence of fluoxetine. The effects of various parameters such as AgNP and Tb(3+) concentration and the pH of the media were investigated. Under obtained optimal conditions, the fluorescence intensity of the terbium-fluoxetine-AgNP system was enhanced linearly by increasing the concentration of fluoxetine in the range of 0.008 to 19 mg/L. The limit of detection (b + 3s) was 8.3 × 10(-4) mg/L. The interference effects of common species found in real samples were also studied. The method had good linearity, recovery, reproducibility and sensitivity, and was satisfactorily applied for the determination of fluoxetine in tablet formulations, human urine and plasma samples. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

  4. Neutron Diffraction and Electrical Transport Studies on Magnetic Transition in Terbium at High Pressures and Low Temperatures (United States)

    Thomas, Sarah; Montgomery, Jeffrey; Tsoi, Georgiy; Vohra, Yogesh; Weir, Samuel; Tulk, Christopher; Moreira Dos Santos, Antonio


    Neutron diffraction and electrical transport measurements have been carried out on the heavy rare earth metal terbium at high pressures and low temperatures in order to elucidate its transition from a helical antiferromagnetic to a ferromagnetic ordered phase as a function of pressure. The electrical resistance measurements using designer diamonds show a change in slope as the temperature is lowered through the ferromagnetic Curie temperature. The temperature of the ferromagnetic transition decreases at a rate of -16.7 K/GPa till 3.6 GPa, where terbium undergoes a structural transition from hexagonal close packed (hcp) to an α-Sm phase. Above this pressure, the electrical resistance measurements no longer exhibit a change in slope. In order to confirm the change in magnetic phase suggested by the electrical resistance measurements, neutron diffraction measurements were conducted at the SNAP beamline at the Oak Ridge National Laboratory. Measurements were made at pressures to 5.3 GPa and temperatures as low as 90 K. An abrupt increase in peak intensity in the neutron diffraction spectra signaled the onset of magnetic order below the Curie temperature. A magnetic phase diagram of rare earth metal terbium will be presented to 5.3 GPa and 90 K based on these studies.

  5. Rate Theory Modeling and Simulations of Silicide Fuel at LWR Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States); Ye, Bei [Argonne National Lab. (ANL), Argonne, IL (United States); Mei, Zhigang [Argonne National Lab. (ANL), Argonne, IL (United States); Hofman, Gerard [Argonne National Lab. (ANL), Argonne, IL (United States); Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States)


    Uranium silicide (U3Si2) fuel has higher thermal conductivity and higher uranium density, making it a promising candidate for the accident-tolerant fuel (ATF) used in light water reactors (LWRs). However, previous studies on the fuel performance of U3Si2, including both experimental and computational approaches, have been focusing on the irradiation conditions in research reactors, which usually involve low operation temperatures and high fuel burnups. Thus, it is important to examine the fuel performance of U3Si2 at typical LWR conditions so as to evaluate the feasibility of replacing conventional uranium dioxide fuel with this silicide fuel material. As in-reactor irradiation experiments involve significant time and financial cost, it is appropriate to utilize modeling tools to estimate the behavior of U3Si2 in LWRs based on all those available research reactor experimental references and state-of-the-art density functional theory (DFT) calculation capabilities at the early development stage. Hence, in this report, a comprehensive investigation of the fission gas swelling behavior of U3Si2 at LWR conditions is introduced. The modeling efforts mentioned in this report was based on the rate theory (RT) model of fission gas bubble evolution that has been successfully applied for a variety of fuel materials at devious reactor conditions. Both existing experimental data and DFT-calculated results were used for the optimization of the parameters adopted by the RT model. Meanwhile, the fuel-cladding interaction was captured by the coupling of the RT model with simplified mechanical correlations. Therefore, the swelling behavior of U3Si2 fuel and its consequent interaction with cladding in LWRs was predicted by the rate theory modeling, providing valuable information for the development of U3Si2 fuel as an accident

  6. Study of Silver Nanoparticles Sensitized Fluorescence and Second-Order Scattering of Terbium(III-Pefloxacin Mesylate Complex and Determination of Pefloxacin Mesylate

    Directory of Open Access Journals (Sweden)

    Aiyun Li


    Full Text Available α-Keto acid of pefloxacin mesylate (PFLX can form the complex with Terbium(III. The intramolecular energy from PFLX to Terbium(III ion takes place when excited, and thus Terbium(III excited state is formed and then emits the characteristic fluorescence of Terbium(III, locating at 490, 545, 580, and 620 nm. The second-order scattering (SOS peak at 545 nm also appears for the complex with the exciting wavelength of 273 nm. When the silver nanoparticles are added to the system, the luminescence intensity at 545 nm greatly increased. So, with the adding of nanoparticles to the Terbium(III-PFLX complex, not only is the intramolecular energy promoted but also the SOS intensity is enhanced. The experimental results show that it is the silver nanoparticles with certain size and certain concentration which can greatly enhance the fluorescence-SOS intensity, and the relative intensity at 545 nm is proportional to the amount of PFLX. Based on this phenomenon, a novel method for the determination of PFLX has been developed and applied to the determination of PFLX in capsule and serum samples.

  7. Large-format platinum silicide microwave kinetic inductance detectors for optical to near-IR astronomy. (United States)

    Szypryt, P; Meeker, S R; Coiffard, G; Fruitwala, N; Bumble, B; Ulbricht, G; Walter, A B; Daal, M; Bockstiegel, C; Collura, G; Zobrist, N; Lipartito, I; Mazin, B A


    We have fabricated and characterized 10,000 and 20,440 pixel Microwave Kinetic Inductance Detector (MKID) arrays for the Dark-speckle Near-IR Energy-resolved Superconducting Spectrophotometer (DARKNESS) and the MKID Exoplanet Camera (MEC). These instruments are designed to sit behind adaptive optics systems with the goal of directly imaging exoplanets in a 800-1400 nm band. Previous large optical and near-IR MKID arrays were fabricated using substoichiometric titanium nitride (TiN) on a silicon substrate. These arrays, however, suffered from severe non-uniformities in the TiN critical temperature, causing resonances to shift away from their designed values and lowering usable detector yield. We have begun fabricating DARKNESS and MEC arrays using platinum silicide (PtSi) on sapphire instead of TiN. Not only do these arrays have much higher uniformity than the TiN arrays, resulting in higher pixel yields, they have demonstrated better spectral resolution than TiN MKIDs of similar design. PtSi MKIDs also do not display the hot pixel effects seen when illuminating TiN on silicon MKIDs with photons with wavelengths shorter than 1 µm.

  8. Formation of the Thermoelectric Candidate Chromium Silicide by Use of a Pack-Cementation Process (United States)

    Stathokostopoulos, D.; Chaliampalias, D.; Tarani, E.; Theodorakakos, A.; Giannoulatou, V.; Polymeris, G. S.; Pavlidou, E.; Chrissafis, K.; Hatzikraniotis, E.; Paraskevopoulos, K. M.; Vourlias, G.


    Transition-metal silicides are reported to be good candidates for thermoelectric applications because of their thermal and structural stability, high electrical conductivity, and generation of thermoelectric power at elevated temperatures. Chromium disilicide (CrSi2) is a narrow-gap semiconductor and a potential p-type thermoelectric material up to 973 K with a band gap of 0.30 eV. In this work, CrSi2 was formed from Si wafers by use of a two-step, pack-cementation, chemical diffusion method. Several deposition conditions were used to investigate the effect of temperature and donor concentration on the structure of the final products. Scanning electron microscopy and x-ray diffraction analysis were performed for phase identification, and thermal stability was evaluated by means of thermogravimetric measurements. The results showed that after the first step, chromizing, the structure of the products was a mixture of several Cr-Si phases, depending on the donor (Cr) concentration during the deposition process. After the second step, siliconizing, the pure CrSi2 phase was formed as a result of Si enrichment of the initial Cr-Si phases. It was also revealed that this compound has thermoelectric properties similar to those reported elsewhere. Moreover, it was found to have exceptional chemical stability even at temperatures up to 1273 K.

  9. XTEM Studies of Nickel Silicide Growth on Si(100) Using a Ni/Ti Bilayer System (United States)

    Falke, U.; Fenske, F.; Schulze, S.; Hietschold, M.


    Using a Ni/Ti bilayer system on Si(100) substrates we found a preferential growth of epitaxial NiSi2 at reaction temperatures of about 475 °C. This is attributed to the relatively slow Ni transport rate through the Ti layer, which acts as a diffusion rate limiting barrier. Annealing temperatures of 500 °C lead to the formation of mainly orthorhombic NiSi with a small fraction of NiSi2. The silicide phases grow with well defined orientations with respect to the underlying Si lattice for annealing temperatures up to 475 °C. An einem Ni/Ti-Zweischichtsystem auf Si(100)-Substraten fanden wir ein bevorzugtes Wachstum von epitaktischem NiSi2 bei Reaktionstemperaturen von 475 °C. Das wird auf die geringe Transportrate für Ni durch die Ti-Schicht, die als Barriere zur Begrenzung der Diffusionsrate dient, zurückgeführt. Temperaturen von 500 °C führen zur Bildung von hauptsächlich orthorhombischem NiSi und, in geringem Maß, von NiSi2. Bis zu Temperaturen von 475 °C wachsen die Silicidphasen mit definierten Orientierungen in Bezug auf das darunterliegende Si-Gitter.

  10. Mesoscale Evaluation of Titanium Silicide Monolayer as a Cathode Host Material in Lithium-Sulfur Batteries (United States)

    Liu, Zhixiao; Balbuena, Perla B.; Mukherjee, Partha P.


    Two-dimensional materials are competitive candidates as cathode materials in lithium-sulfur batteries for immobilizing soluble polysulfides and mitigating the shuttle effect. In this study, a mesoscale modeling approach, which combines first-principles simulation and kinetic Monte Carlo simulation, is employed to evaluate titanium silicide (Ti2Si and TiSi2) monolayers as potential host materials in lithium-sulfur batteries. It is found that the Ti2Si monolayer has much stronger affinities to Li2S x ( x = 1, 2, 4) molecules than does the TiSi2 monolayer. Also, Ti2Si can facilitate the dissociation of long-chain Li2S4 to LiS2. On the other hand, TiSi2 can only provide a weak chemical interaction for trapping soluble Li2S4. Therefore, the Ti2Si monolayer can be considered to be the next-generation cathode material for lithium-sulfur batteries. Nevertheless, the strong interaction between Ti2Si and Li2S also causes fast surface passivation. How to control the Li2S precipitation on Ti2Si should be answered by future studies.

  11. Crystal structure of the ternary silicide Gd2Re3Si5

    Directory of Open Access Journals (Sweden)

    Vitaliia Fedyna


    Full Text Available A single crystal of the title compound, the ternary silicide digadolinium trirhenium pentasilicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubooctahedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square antiprisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re—Re distance of 2.78163 (5 Å and isolated squares with an Re—Re distance of 2.9683 (6 Å.

  12. The new ternary silicide ErCo{sub 3}Si{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Dzevenko, Mariya; Bigun, Inna [Ivan Franko National Univ., Lviv (Ukraine). Dept. of Analytical Chemistry


    The new ternary silicide ErCo{sub 3}Si{sub 2} adopts the ErRh{sub 3}Si{sub 2} structure type (space group Imma, Pearson code oI24, Z = 4, a = 6.950(1), b = 9.020(2), c = 5.230(1) A, R{sub 1} = 0.0565, wR{sub 2} = 0.0355, 253 F{sup 2} values, 23 variables). It is a deformation derivative of the CeCo{sub 3}B{sub 2} structure type. The coordination of the Er atom shows a normal 20-vertex polyhedron [Er(Si{sub 6}Co{sub 12}Er{sub 2})]. The two similar coordination polyhedra of Co are a distorted icosahedron [Co(Si{sub 4}Co{sub 4}Er{sub 4})], and a distorted icosahedron with one capped face [Co(Si{sub 4}Co{sub 5}Er{sub 4})]. The Si atom is surrounded by the polyhedron [Si(Co{sub 6}Si{sub 2}Er{sub 3})]. (orig.)

  13. Status of core conversion with LEU silicide fuel in JRR-4

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, Teruo; Ohnishi, Nobuaki; Shirai, Eiji [Japan Atomic Energy Research Institute, Ibaraki-ken (Japan)


    Japan Research Reactor No.4 (JRR-4) is a light water moderated and cooled, 93% enriched uranium ETR-type fuel used and swimming pool type reactor with thermal output of 3.5MW. Since the first criticality was achieved on January 28, 1965, JRR-4 has been used for shielding experiments, radioisotope production, neutron activation analyses, training for reactor engineers and so on for about 30 years. Within the framework of the RERTR Program, the works for conversion to LEU fuel are now under way, and neutronic and thermal-hydraulic calculations emphasizing on safety and performance aspects are being carried out. The design and evaluation for the core conversion are based on the Guides for Safety Design and Evaluation of research and testing reactor facilities in Japan. These results show that the JRR-4 will be able to convert to use LEU fuel without any major design change of core and size of fuel element. LEU silicide fuel (19.75%) will be used and maximum neutron flux in irradiation hole would be slightly decreased from present neutron flux value of 7x10{sup 13}(n/cm{sup 2}/s). The conversion works are scheduled to complete in 1998, including with upgrade of the reactor building and utilization facilities.

  14. The whole-core LEU silicide fuel demonstration in the JMTR

    Energy Technology Data Exchange (ETDEWEB)

    Aso, Tomokazu; Akashi, Kazutomo; Nagao, Yoshiharu [Japan Atomic Energy Research Institute, Ibaraki-ken (Japan)] [and others


    The JMTR was fully converted to LEU silicide (U{sub 3}Si{sub 2}) fuel with cadmium wires as burnable absorber in January, 1994. The reduced enrichment program for the JMTR was initiated in 1979, and the conversion to MEU (enrichment ; 45%) aluminide fuel was carried out in 1986 as the first step of the program. The final goal of the program was terminated by the present LEU conversion. This paper describes the results of core physics measurement through the conversion phase from MEU fuel core to LEU fuel core. Measured excess reactivities of the LEU fuel cores are mostly in good agreement with predicted values. Reactivity effect and burnup of cadmium wires, therefore, were proved to be well predicted. Control rod worth in the LEU fuel core is mostly less than that in the MEU fuel core. Shutdown margin was verified to be within the safety limit. There is no significant difference in temperature coefficient of reactivity between the MEU and LEU fuel cores. These results verified that the JMTR was successfully and safely converted to LEU fuel. Extension of the operating cycle period was achieved and reduction of spend fuel elements is expected by using the fuel with high uranium density.

  15. Magnesium silicide nanoparticles as a deoxygenation agent for cancer starvation therapy (United States)

    Zhang, Chen; Ni, Dalong; Liu, Yanyan; Yao, Heliang; Bu, Wenbo; Shi, Jianlin


    A material that rapidly absorbs molecular oxygen (known as an oxygen scavenger or deoxygenation agent (DOA)) has various industrial applications, such as in food preservation, anticorrosion of metal and coal deoxidation. Given that oxygen is vital to cancer growth, to starve tumours through the consumption of intratumoral oxygen is a potentially useful strategy in fighting cancer. Here we show that an injectable polymer-modified magnesium silicide (Mg2Si) nanoparticle can act as a DOA by scavenging oxygen in tumours and form by-products that block tumour capillaries from being reoxygenated. The nanoparticles are prepared by a self-propagating high-temperature synthesis strategy. In the acidic tumour microenvironment, the Mg2Si releases silane, which efficiently reacts with both tissue-dissolved and haemoglobin-bound oxygen to form silicon oxide (SiO2) aggregates. This in situ formation of SiO2 blocks the tumour blood capillaries and prevents tumours from receiving new supplies of oxygen and nutrients.

  16. Influence of crystalline structure on the luminescence properties of terbium orthotantalates

    Energy Technology Data Exchange (ETDEWEB)

    Siqueira, Kisla P.F. [Departamento de Química, Universidade Federal de Ouro Preto, Campus Morro do Cruzeiro, ICEB II, Ouro Preto 35400-000, Minas Gerais (Brazil); Carmo, Alexandre P. [Instituto Federal Fluminense, Campus Cabo Frio, RJ 28909-971 (Brazil); Bell, Maria J.V. [Departamento de Física, Universidade Federal de Juiz de Fora, Juiz de Fora 36036-330, MG (Brazil); Dias, Anderson, E-mail: [Departamento de Química, Universidade Federal de Ouro Preto, Campus Morro do Cruzeiro, ICEB II, Ouro Preto 35400-000, Minas Gerais (Brazil)


    Terbium orthotantalate powders were produced with M-fergusonite type (I2/a) and M′-fergusonite type (P2/a) structures. The samples were studied by X-ray diffraction, Raman scattering, and photoluminescence measurements (emission and decay curves). The results showed that crystalline materials were obtained with all the 18 Raman-active modes predicted by group theory calculations. Also, it was observed through photoluminescence decay curves that the Tb{sup 3+} ions occupies only one-symmetry site in both crystallographic arrangements. Photoluminescence emission curves exhibited some variation in spectral shape, peak position, and relative intensity as a consequence of their different crystalline arrangements. The dominated emission of Tb{sup 3+} ({sup 5}D{sub 4}→{sup 7}F{sub 5}) is centered with a maximum intensity at 549.2 nm (M-type) and 543.0 nm (M′-type). Fluorescence lifetimes for M-TbTaO{sub 4} and M′-TbTaO{sub 4} were determined as 33.4 μs and 1.25 ms, respectively. M′-type materials seems to be the most suitable for luminescent devices and could be a potential green luminescent material due to the strongest emission if compared with the M-fergusonite type. -- Highlights: ► Terbium orthotantalates were prepared in two different crystalline structures: I2/a and P2/a. ► XRD and Raman scattering showed that the different space groups obtained were exhibited all the 18 Raman-active modes. ► PL decay curves that the Tb{sup 3+} ions occupies only one-symmetry site in both crystallographic arrangements. ► Dominated emission of Tb{sup 3+} ({sup 5}D{sub 4}→{sup 7}F{sub 5}) is centered with a maximum intensity at 549 nm (M-type) and 543 nm (M′-type). ► Fluorescence lifetimes for M-TbTaO{sub 4} and M′-TbTaO{sub 4} were determined as 33.4 μs and 1.25 ms, respectively.

  17. Analysis of Channel Stress Induced by NiPt-Silicide in Metal-Oxide-Semiconductor Field-Effect Transistor and Its Generation Mechanism (United States)

    Mizuo, Mariko; Yamaguchi, Tadashi; Kudo, Shuichi; Hirose, Yukinori; Kimura, Hiroshi; Tsuchimoto, Jun-ichi; Hattori, Nobuyoshi


    Channel stress induced by NiPt-silicide films in metal-oxide-semiconductor field-effect transistors (MOSFETs) was demonstrated using UV-Raman spectroscopy, and its generation mechanism was revealed. It was possible to accurately measure the channel stress with the Raman test structure. The channel stress depends on the source/drain doping type and the second silicide annealing method. In order to discuss the channel stress generation mechanism, NiPt-silicide microstructure analyses were performed using X-ray diffraction analysis and scanning transmission electron microscopy. The channel stress generation mechanism can be elucidated by the following two factors: the change in the NiSi lattice spacing, which depends on the annealing temperature, and the NiSi crystal orientation. The analyses of these factors are important for controlling channel stress in stress engineering for high-performance transistors.

  18. Laser control and temperature switching of luminescence intensity in photostable transparent film based on terbium(III) β-diketonate complex (United States)

    Lapaev, Dmitry V.; Nikiforov, Victor G.; Safiullin, Georgy M.; Lobkov, Vladimir S.; Salikhov, Kev M.; Knyazev, Andrey A.; Galyametdinov, Yury G.


    The study of the terbium(III) and gadolinium(III) β-diketonate complexes by photoluminescence spectroscopy reveals considerable changes of the photophysical properties of the complexes under the UV laser irradiation. The measurements show the enhancement of the luminescence intensities in the vitrified transparent film of the terbium(III) complex as well as the gadolinium(III) complex under the 337 nm laser irradiation at room temperature. The irradiated film of the terbium(III) complex restores the initial photophysical properties after heating close to the melting temperature (∼353 K) and cooling. We observe no change of the luminescent properties of the irradiated film for months. These features can be used for the design of new lanthanide-based photostable systems with laser control of the luminescence intensity.

  19. Development of functionalized terbium fluorescent nanoparticles for antibody labeling and time-resolved fluoroimmunoassay application. (United States)

    Ye, Zhiqiang; Tan, Mingqian; Wang, Guilan; Yuan, Jingli


    Silica-based functionalized terbium fluorescent nanoparticles were prepared, characterized and developed as a fluorescence probe for antibody labeling and time-resolved fluoroimmunoassay. The nanoparticles were prepared in a water-in-oil (W/O) microemulsion containing a strongly fluorescent Tb(3+) chelate, N,N,N(1),N(1)-[2,6-bis(3'-aminomethyl-1'-pyrazolyl)phenylpyridine] tetrakis(acetate)-Tb(3+) (BPTA-Tb(3+)), Triton X-100, octanol, and cyclohexane by controlling copolymerization of tetraethyl orthosilicate (TEOS) and 3-[2-(2-aminoethylamino)ethylamino]propyl-trimethoxysilane (AEPS) with ammonia water. The characterizations by transmission electron microscopy and fluorometric methods show that the nanoparticles are spherical and uniform in size, 45 +/- 3nm in diameter, strongly fluorescent with fluorescence quantum yield of 10% and a long fluorescence lifetime of 2.0ms. The amino groups directly introduced to the nanoparticle's surface by using AEPS in the preparation made the surface modification and bioconjugation of the nanoparticles easier. The nanoparticle-labeled anti-human alpha-fetoprotein antibody was prepared and used for time-resolved fluoroimmunoassay of alpha-fetoprotein (AFP) in human serum samples. The assay response is linear from 0.10ngml(-1) to about 100ngml(-1) with the detection limit of 0.10ngml(-1). The coefficient variations (CVs) of the method are less than 9.0%, and the recoveries are in the range of 84-98% for human serum sample measurements.

  20. Highly efficient precipitation of phosphoproteins using trivalent europium, terbium, and erbium ions

    Energy Technology Data Exchange (ETDEWEB)

    Guezel, Yueksel; Rainer, Matthias; Mirza, Munazza Raza; Bonn, Guenther K. [Leopold-Franzens University, Institute of Analytical Chemistry and Radiochemistry, Innsbruck (Austria)


    This study describes a highly efficient method for the selective precipitation of phosphoproteins by trivalent europium, terbium, and erbium metal ions. These metal cations belong to the group of lanthanides and are known to be hard acceptors with an overwhelming preference for oxygen-containing anions such as phosphates to which they form very tight ionic bonds. The method could be successfully applied to specifically precipitate phosphoproteins from complex samples including milk and egg white by forming solid metal-protein complexes. Owing to the low solubility product of the investigated lanthanide salts, the produced metal-protein complexes showed high stability. The protein pellets were extensively washed to remove nonphosphorylated proteins and contaminants. For the analysis of proteins the pellets were first dissolved in 30 % formic acid and subjected to matrix-assisted laser desorption/ionization-time of flight (MALDI-TOF) MS. For peptide mass-fingerprint analysis the precipitated phosphoproteins were enzymatically digested using microwave-assisted digestion. The method was found to be highly specific for the isolation and purification of phosphoproteins. Protein quantification was performed by colorimetric detection of total precipitated phosphoproteins and revealed more than 95 % protein recovery for each lanthanide salt. (orig.)

  1. A Terbium Sensitized Luminescence Method for the Assay of Flubiprofen in Pharmaceutical Formulations

    Directory of Open Access Journals (Sweden)

    Salma M.Z. Al-Kindy


    Full Text Available A sensitive time-resolved luminescence method for the determination of flubiprofen (FLP in methanol and in aqueous solution is described. The method is based on the luminescence sensitization of terbium (Tb3+ by the formation of a ternary complex with FLP in the presence of 4,7 diphenyl 1,10 phenanthroline (DPP as co-ligand, and Tween-20 as surfactant. The signal for Tb-FLP-DPP was monitored at λex  = 285 nm and λem  = 552 nm. Optimum conditions for the formation of the complex in an aqueous system were TRIS buffer, pH 8.0, DPP (2.5Å~10−7  M, Tween-20 (0.30% and 4Å~10-5  mol L-1  of Tb3+  which allowed the determination of 20–1000 ng mL-1  of FLP with a limit of detection (LOD of 10 ng mL-1 . The relative standard deviations of the method ranged between 0.6 and 1.4% indicating excellent reproducibility of the method. The proposed method was successfully applied for the assays of FLP in pharmaceutical formulations and spiked tap water samples with average recoveries of 87% – 95%.

  2. Sensitization effects of supramolecular assemblies on the luminescence of terbium-ion prulifloxacin complexes

    Energy Technology Data Exchange (ETDEWEB)

    Wang Hong; Yi Chongyue; Li Xue; Fang Fang [School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Yang Yajiang, E-mail: [School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)


    Luminescence enhancement of terbium-ion prulifloxacin complexes (Tb(III)-PUFX) in supramolecular hydrogels formed by assembly of 1,3:2,4-di-O-benzylidene-D-sorbitol (DBS) was investigated by steady-state fluorescence, varying temperature fluorescence and time-resolved fluorescence. The luminescence images show that Tb(III)-PUFX were dispersed in the DBS gels. The luminescence intensity of Tb(III)-PUFX in the DBS gels was significantly increased in comparison with that in corresponding aqueous solutions. The varying temperature fluorescent spectra show that the luminescence intensity of Tb(III)-PUFX decreased with an increase in the temperature. This implies that the luminescence enhancement of Tb(III)-PUFX is related to the dissociation and the formation of the DBS assemblies. Time-resolved fluorescence measurements show slower rotational motion in DBS gels in comparison with that in the corresponding aqueous solutions. This may be ascribed to a unique microstructure of three-dimensional network formed by DBC aggregates, resulting in deactivation of the nonradiative relaxation. The images of field emission scanning electron microscopy and polarized optical microscopy indicate that the morphology of the DBS assemblies was not influenced upon addition of Tb(III)-PUFX to the DBS gels.

  3. A Nanoscale Multiresponsive Luminescent Sensor Based on a Terbium(III) Metal-Organic Framework. (United States)

    Dang, Song; Wang, Ting; Yi, Feiyan; Liu, Qinghui; Yang, Weiting; Sun, Zhong-Ming


    A nanoscale terbium-containing metal-organic framework (nTbL), with a layer-like structure and [H2 NMe2 ](+) cations located in the framework channels, was synthesized under hydrothermal conditions. The structure of the as-prepared sample was systematically confirmed by powder XRD and elemental analysis; the morphology was characterized by field-emission SEM and TEM. The photoluminescence studies revealed that rod-like nTbL exhibited bright-green emission, corresponding to (5)D4 →(7)FJ (J=6-3) transitions of the Tb(3+) ion under excitation. Further sensing measurements revealed that as-prepared nTbL could be utilized as a multiresponsive luminescent sensor, which showed significant and exclusive detection ability for Fe(3+) ions and phenylmethanol. These results highlight the practical applications of lanthanide-containing metal-organic frameworks as fluorescent probes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Terbium-Doped VO2 Thin Films: Reduced Phase Transition Temperature and Largely Enhanced Luminous Transmittance. (United States)

    Wang, Ning; Duchamp, Martial; Dunin-Borkowski, Rafal E; Liu, Shiyu; Zeng, XianTing; Cao, Xun; Long, Yi


    Vanadium dioxide (VO2) is a well-known thermochromic material with large IR modulating ability, promising for energy-saving smart windows. The main drawbacks of VO2 are its high phase transition temperature (τ(c) = 68°C), low luminous transmission (T(lum)), and weak solar modulating ability (ΔT(sol)). In this paper, the terbium cation (Tb(3+)) doping was first reported to reduce τ(c) and increase T(lum) of VO2 thin films. Compared with pristine VO2, 2 at. % doping level gives both enhanced T(lum) and ΔT(sol) from 45.8% to 54.0% and 7.7% to 8.3%, respectively. The T(lum) increases with continuous Tb(3+) doping and reaches 79.4% at 6 at. % doping level, representing ∼73.4% relative increment compared with pure VO2. This has surpassed the best reported doped VO2 thin films. The enhanced thermochromic properties is meaningful for smart window applications of VO2 materials.

  5. Luminescent investigations of terbium(III) biosorption as a surrogate for heavy metals and radionuclides. (United States)

    Achyuthan, Komandoor E; Arango, Dulce C; Carles, Elizabeth L; Cutler, Christopher E; Meyer, Lauren A; Brozik, Susan M


    We describe a metal transport system for investigating the interfacial interactions between the anionic surface charge of a gram-negative bacterium (Escherichia coli) and a trivalent cationic metal, Tb3+. We believe this is the first description of the uptake kinetics, sub- and intracellular distribution, and temporal fate of Tb3+ ion in E. coli. We used the luminescence of the terbium-dipicolinic acid chelate to study metal ion transport. The bacteria had a high tolerance for the metal (IC(50) = 4 mM Tb3+). Metal ion transport was passive and metabolism independent. The uptake kinetics rapidly reached a maximum within 15 min, followed by a stasis for 60 min, and declining thereafter between 120 and 240 min, resulting in a biphasic curve. During this period, greater than one-third of the metal ion was sequestered within the cell. Our choice of a safe Biosafety Level I E. coli bacteria and the relatively non-toxic Tb3+ metal represents a model system for luminescent investigations of biosorption, for studying bacterial-water interfacial chemistry and for the bioremediation of heavy metals and radionuclides.

  6. Steady-state thermal hydraulic analysis and flow channel blockage accident analysis of JRR-4 silicide LEU core

    Energy Technology Data Exchange (ETDEWEB)

    Kaminaga, Masanori; Yamamoto, Kazuyoshi; Watanabe, Shukichi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment


    JRR-4 is a light water moderated and cooled, graphite reflected pool type research reactor using high enriched uranium (HEU) plate-type fuels. Its thermal power is 3.5 MW. The core conversion program from HEU fuel to uranium-silicon-aluminum (U{sub 3}Si{sub 2}-Al) dispersion type fuel (Silicide fuel) with low enriched uranium (LEU) is currently conducted at the JRR-4. This report describes about the steady-state thermal hydraulic analysis results and the flow channel blockage accident analysis result. In JRR-4, there are two operation mode. One is high power operation mode up to 3.5 MW, under forced convection cooling using the primary and the secondary cooling systems. The other is low power operation mode up to 200 kW, under natural circulation cooling between the reactor core and the reactor pool without the primary and the secondary cooling systems. For the analysis of the high power operation mode under forced convection cooling and the flow channel blockage accident, COOLOD code was used. On the other hand, for the analysis of low power operation under natural convection cooling, COOLOD-N2 code was used. From steady-state thermal hydraulic analysis results of both forced and natural convection cooling, fuel temperature, minimum DNBR etc. meet the design criteria and JRR-4 LEU silicide core has enough safety margin under normal operation conditions. Furthermore, flow channel blockage accident analysis results show that one channel flow blockage accident meet the safety criteria for accident conditions which have been established for JRR-4 LEU silicide core. (author)

  7. Physical properties of ternary silicide superconductors Li2XSi3 (X = Rh, Os): An ab initio study (United States)

    Alam, M. A.; Zilani, M. A. K.; Parvin, F.; Hadi, M. A.


    An ab initio method, based on the plane wave pseudopotential and the generalized gradient approximation (GGA), is performed to investigate the physical properties such as structural, elastic, electronic and bonding properties of newly synthesized Li2RhSi3 and predicted Li2OsSi3 ternary silicide superconductors for the first time. Both of these compounds are mechanically stable and are brittle in nature. They also have good machinability. Electronic band structures reveal that these compounds have metallic characteristics. They possess complex bonding nature (metallic, covalent and ionic). According to theoretical Vickers hardness, Li2RhSi3 is softer than Li2OsSi3.

  8. Development of silicide coating over molybdenum based refractory alloy and its characterization

    Energy Technology Data Exchange (ETDEWEB)

    Chakraborty, S.P., E-mail: [Materials Processing Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085 (India); Banerjee, S.; Sharma, I.G.; Suri, A.K. [Materials Processing Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085 (India)


    Molybdenum based refractory alloys are potential candidate materials for structural applications in high temperature compact nuclear reactors and fusion reactors. However, these alloys being highly susceptible to oxidation in air or oxygen at elevated temperature, undergoes severe losses from highly volatile molybdenum trioxide species. Present investigation, therefore, examines the feasibility of development of silicide type of coating over molybdenum base TZM alloy shape (Mo > 99 wt.%) using pack cementation coating technique. TZM alloy was synthesized in this laboratory from oxide intermediates of MoO{sub 2}, TiO{sub 2} and ZrO{sub 2} in presence of requisite amount of carbon, by alumino-thermic reduction smelting technique. The arc melted and homogenized samples of TZM alloy substrate was then embedded in the chosen and intimately mixed pack composition consisting of inert matrix (Al{sub 2}O{sub 3}), coating powder (Si) and activator (NH{sub 4}Cl) taken in the judicious proportion. The sealed charge packs contained in an alumina crucible were heated at temperatures of 1000 {sup o}C for 8-16 h heating cycle to develop the coating. The coating phase was confirmed to be of made of MoSi{sub 2} by XRD analysis. The morphology of the coating was studied by SEM characterization. It had revealed that the coating was diffusion bonded where Si from coating diffused inward and Mo from TZM substrate diffused outward to form the coating. The coating was found to be resistant to oxidation when tested in air up to 1200 {sup o}C. A maximum 100 {mu}m of coating thickness was achieved on each side of the substrate.

  9. Rate Theory Modeling and Simulation of Silicide Fuel at LWR Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Ye, Bei [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Hofman, Gerard [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Gamble, Kyle [Idaho National Lab. (INL), Idaho Falls, ID (United States). Fuel Modeling and Simulation; Mei, Zhi-Gang [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division


    As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U3Si2) at LWR conditions needs to be well understood. In this report, rate theory model was developed based on existing experimental data and density functional theory (DFT) calculations so as to predict the fission gas behavior in U3Si2 at LWR conditions. The fission gas behavior of U3Si2 can be divided into three temperature regimes. During steady-state operation, the majority of the fission gas stays in intragranular bubbles, whereas the dominance of intergranular bubbles and fission gas release only occurs beyond 1000 K. The steady-state rate theory model was also used as reference to establish a gaseous swelling correlation of U3Si2 for the BISON code. Meanwhile, the overpressurized bubble model was also developed so that the fission gas behavior at LOCA can be simulated. LOCA simulation showed that intragranular bubbles are still dominant after a 70 second LOCA, resulting in a controllable gaseous swelling. The fission gas behavior of U3Si2 at LWR conditions is benign according to the rate theory prediction at both steady-state and LOCA conditions, which provides important references to the qualification of U3Si2 as a LWR fuel material with excellent fuel performance and enhanced accident tolerance.

  10. Construction of the energy matrix for complex atoms. Part VIII: Hyperfine structure HPC calculations for terbium atom (United States)

    Elantkowska, Magdalena; Ruczkowski, Jarosław; Sikorski, Andrzej; Dembczyński, Jerzy


    A parametric analysis of the hyperfine structure (hfs) for the even parity configurations of atomic terbium (Tb I) is presented in this work. We introduce the complete set of 4fN-core states in our high-performance computing (HPC) calculations. For calculations of the huge hyperfine structure matrix, requiring approximately 5000 hours when run on a single CPU, we propose the methods utilizing a personal computer cluster or, alternatively a cluster of Microsoft Azure virtual machines (VM). These methods give a factor 12 performance boost, enabling the calculations to complete in an acceptable time.

  11. Thin film properties of sputtered niobium silicide on SiO/sub 2/, Si/sub 3/N/sub 4/, and N/sup +/ poly-Si

    Energy Technology Data Exchange (ETDEWEB)

    Chow, T.P.; Lu, W.J.; Steckl, A.J.; Baliga, B.J.


    Thin film properties of niobium silicide sputtered from a slightly silicon-rich (Si/Nb approx. = 2.3), cold-pressed alloy target onto SiO/sub 2/, Si/sub 3/N/sub 4/, and n doped poly-Si have been investigated. The structural and compositional properties were examined with x-ray diffraction, Rutherford backscattering spectrometry (RBS), and secondary ion mass spectrometry (SIMS). X-ray diffraction revealed that NbSi/sub 2/ was the predominant silicide phase present, unlike those films reported previously, which contained significant amounts of an intermediate silicide phase (Nb/sub 5/Si/sub 3/). These films had a SiNb ratio of 2.1 as determined from RBS and contained lower levels of common contaminants (such as N/sub 2/, O/sub 2/, and carbon). Isochronal and isothermal annealing showed that the major decrease in resistivity occurred in the first 5 min, and a resistivity value of approx. =70 cap omega..-cm was obtained after annealing at 1000/sup 0/C. During annealing, phosphorus was found to diffuse through NbSi/sub 2/ rapidly, similar to other refractory silicides.

  12. Ni and Ni Silicides Ohmic Contacts on N-type 6H-SiC with Medium and Low Doping Level

    Directory of Open Access Journals (Sweden)

    S. Cichon


    Full Text Available Ni silicides contacts, which are expected to be advantageous contact materials on SiC, were tested in this work. Prepared contact structures were ohmic with low contact resistivity approximately 8×10-4 Ω cm2 after annealing at 960°C as far as the SiC substrate with a medium doping level was concerned, no matter whether Ni or Ni silicides were used. At lower annealing temperatures, only Schottky behavior was observed by means of I-V characteristics measurements. In the case of SiC substrate with a low doping level, the behavior differed. It was necessary to anneal the structures at 1070°C to see ohmic behavior appearing with resistivities reaching 8×10-3 Ω cm2 and this was valid only for Ni and Ni2Si. Raman spectroscopy measurements confirmed formation of single Ni silicides as expected. It was found that Ni silicides can keep as good resistivity as Ni contacts while they interact with SiC in limited way and their undesirable drop-like morphology is expected to be overcome for example with a covering layer.

  13. Formation and thermal stability of Ti-capped Co-silicide from Co-Ta alloy films on (100) Si and polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Joo; Choi, Hyo Jick; Ko, Dae Hong [Yonsei Univ., Seoul (Korea, Republic of); Ku, Ja Hum; Choi, Si Young; Fujihara, Kazuyuki [Samsung Electronics Co., Ltd., Yongin (Korea, Republic of); Yang, Cheol Woong [Sungkyunkwan Univ., Suwon (Korea, Republic of)


    Co-Ta alloy films were deposited on (100) single-crystalline and polycrystalline silicon substrates by using DC magnetron sputtering. The interfacial reactions between the Co-Ta alloy films and the silicon substrates were investigated in the temperature range of 500 {approx} 820 degree C by using rapid thermal annealing in an N{sub 2} ambient. In contrast to the Co/si system, we observed that the formation of Co-silicide and the transformation from the high resistivity CoSi phase to the low resistivity CoSi{sub 2} phase in the Co-Ta/Si system occurred at higher temperatures than it did in the Co/Si system. The Co-silicide films on Si and poly-Si substrates formed from Co-Ta alloy films maintained low sheet resistance values upon high temperature annealing while those of Co-silicide films from the Co/Si system increased significantly. The improvement in the thermal stability of the Co-silicide films formed from Co-Ta alloy films is due to the formation of Ta-compounds, such as the TaSi{sub 2} phase, at the grain boundaries and at the surfaces of the CoSi{sub 2} films.

  14. Spectrofluorimetric determination of human serum albumin using terbium-danofloxacin probe. (United States)

    Ramezani, Amir M; Manzoori, Jamshid L; Amjadi, Mohammad; Jouyban, Abolghasem


    A spectrofluorimetric method is proposed for the determination of human serum albumin (HSA) and bovine serum albumin (BSA) using terbium-danofloxacin (Tb(3+)-Dano) as a fluorescent probe. These proteins remarkably enhance the fluorescence intensity of the Tb(3+)-Dano complex at 545 nm, and the enhanced fluorescence intensity of Tb(3+)-Dano is proportional to the concentration of proteins (HSA and BSA). Optimum conditions for the determination of HSA were investigated and found that the maximum response was observed at: pH = 7.8, [Tb(3+)] = 8.5 × 10(-5) mol L(-1), [Dano] = 1.5 × 10(-4) mol L(-1). The calibration graphs for standard solutions of BSA, HSA, and plasma samples of HSA were linear in the range of 0.2 × 10(-6) - 1.3 × 10(-6) mol L(-1), 0.2 × 10(-6) - 1.4 × 10(-6) mol L(-1), and 0.2 × 10(-6) - 1 × 10(-6) mol L(-1), respectively. The detection limits (S/N = 3) for BSA, HSA, and plasma sample of HSA were 8.7 × 10(-8) mol L(-1), 6.2 × 10(-8) mol L(-1), and 8.1 × 10(-8) mol L(-1), respectively. The applicability of the method was checked using a number of real biological plasma samples and was compared with the UV spectrometric reference method. The results was showed that the method could be regarded as a simple, practical, and sensitive alternative method for determination of albumin in biological samples.

  15. Spectrofluorimetric Determination of Human Serum Albumin Using Terbium-Danofloxacin Probe

    Directory of Open Access Journals (Sweden)

    Amir M. Ramezani


    Full Text Available A spectrofluorimetric method is proposed for the determination of human serum albumin (HSA and bovine serum albumin (BSA using terbium-danofloxacin (Tb3+-Dano as a fluorescent probe. These proteins remarkably enhance the fluorescence intensity of the Tb3+-Dano complex at 545 nm, and the enhanced fluorescence intensity of Tb3+-Dano is proportional to the concentration of proteins (HSA and BSA. Optimum conditions for the determination of HSA were investigated and found that the maximum response was observed at: pH=7.8, [Tb3+] =8.5×10−5 mol L−1, [Dano] =1.5×10−4 mol L−1. The calibration graphs for standard solutions of BSA, HSA, and plasma samples of HSA were linear in the range of 0.2×10−6−1.3×10−6 mol L−1, 0.2×10−6−1.4×10−6 mol L−1, and 0.2×10−6−1×10−6 mol L−1, respectively. The detection limits (S/N = 3 for BSA, HSA, and plasma sample of HSA were 8.7×10−8 mol L−1, 6.2×10−8 mol L−1, and 8.1×10−8 mol L−1, respectively. The applicability of the method was checked using a number of real biological plasma samples and was compared with the UV spectrometric reference method. The results was showed that the method could be regarded as a simple, practical, and sensitive alternative method for determination of albumin in biological samples.

  16. Determination of flavonoids in pharmaceutical preparations using Terbium sensitized fluorescence method

    Directory of Open Access Journals (Sweden)

    M Shaghaghi


    Full Text Available "nBackground and the Purpose of the Study: The aim of this study was development and validation of a simple, rapid and sensitive spectrofluorimetric method for determination of total flavonoids in two topical formulations of Calendula officinalis, Ziziphus Spina-christi and an oral drop of Hypiran perforatum L. The proposed method is based on the formation of terbium (Tb3+ "n-flavonoids (quercetin as a reference standard complex at pH 7.0, which has fluorescence intensely with maximum emission at 545 nm when excited at 310 nm. "nMethod "n: For ointments masses of topical formulations were weighed and added to ethanol-aqueous buffer (pH 10.0 and the resulting mixtures were shaken and then two phases were separated by centrifugation. Aqueous phases were filtered and then diluted with water. For Hypiran drops an appropriate portion was diluted with ethanol and then aliquots of sample or standard solutions were determined according to the experimental procedure. "nResults "n: Under the optimum conditions, total concentrations of flavonoids (as quercetin equivalent in three tested formulations were found to be 0.204 mg/g (for Dermatin cream, 0.476 mg/g (for Calendula ointment and 13.50 μg/ml (for Hypiran drops. Analytical recoveries from samples spiked with different amounts of quercetin were 96.1-104.0 % with RSD % of less than 3.5. Conclusion : The proposed method which requires a simple dissolution step without any matrix interferences provided high sensitivity and selectivity and was easily applied to determine total flavonoids in real samples of three investigated formulations with excellent reproducibility.

  17. TOF SIMS analysis and generation of white photoluminescence from strontium silicate codoped with europium and terbium

    Energy Technology Data Exchange (ETDEWEB)

    Tshabalala, Modiehi A.; Swart, Hendrik C.; Ntwaeaborwa, Odireleng M., E-mail: [Department of Physics, University of the Free State, P.O Box 339, Bloemfontein 9300 South Africa (South Africa)


    White light emitting terbium (Tb{sup 3+}) and europium (Eu{sup 3+}) codoped strontium silicate (Sr{sub 2}SiO{sub 4}) phosphors were prepared by a solid state reaction process. The structure, particle morphology, chemical composition, ion distribution, photoluminescence (PL), and decay characteristics of the phosphors were analyzed by x-ray diffraction (XRD), scanning electron microscopy (SEM), time-of-flight secondary ion mass spectrometry (TOF-SIMS), and PL spectroscopy, respectively. The XRD data showed that our Sr{sub 2}SiO{sub 4} composed of two phases, namely, β-Sr{sub 2}SiO{sub 4} and α′-Sr{sub 2}SiO{sub 4}, and the α′-Sr{sub 2}SiO{sub 4} phase was more prominent than the β-Sr{sub 2}SiO{sub 4} phase. The SEM micrographs showed that the particles were agglomerated together and they did not have definite shapes. All ions (i.e., negative and positive) present in our materials were identified by TOF-SIMS. In addition, the chemical imaging performed with the TOF-SIMS demonstrated how the individual ions including the dopants (Eu{sup 3+} and Tb{sup 3+}) were distributed in the host lattice. White photoluminescence was observed when the Sr{sub 2}SiO{sub 4}:Tb{sup 3+}, Eu{sup 3+} phosphor was excited at 239 nm using a monochromatized xenon lamp as the excitation source. The phosphor exhibited fast decay lifetimes implying that it is not a good candidate for long afterglow applications.

  18. Synthesis, crystal structure and photophysical properties of europium(III) and terbium(III) complexes with pyridine-2,6-dicarboxamide

    NARCIS (Netherlands)

    Tanase, S.; Gallego, P.M.; Gelder, R. de; Fu, W.T.


    The reactions of pyridine-2,6-dicarboxamide with europium(III) and terbium(III) triflates led to the formation of mononuclear complexes of formula [Ln(pcam)(3)](CF3SO3)(3) (Ln = Eu 1, Tb 2; pcam stands for pyridine-2,6-dicarboxamide). From single-crystal X-ray diffraction analysis, the complexes

  19. Zinc sulfide and terbium-doped zinc sulfide films grown by traveling wave reactor atomic layer epitaxy

    CERN Document Server

    Yun, S J; Nam, K S


    Zinc sulfide (ZnS) and terbium-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (ALE). In the present work, ZnCl sub 2 , H sub 2 S, and tris (2,2,6,6-tetramethyl-3,5-heptandionato) terbium (Tb(tmhd) sub 3) were used as the precursors. The dependence of crystallinity and Cl content of ZnS films was investigated on the growth temperature. ZnS and ZnS:Tb films grown at temperatures ranging from 400 to 500 .deg. C showed a hexagonal-2H crystalline structure. The crystallinity of ZnS film was greatly enhanced as the temperature increased. At growth temperatures higher than 450.deg.C, the films showed preferred orientation with mainly (002) diffraction peak. The Cl content decreased from approximately 9 to 1 at.% with the increase in growth temperature from 400 to 500 .deg. C. The segregation of Cl near the surface region and the incorporation of O from Tb(tmhd) sub 3 during ALE process were also observed using Auger electron spectroscopy. The ALE-grown ZnS and ZnS:Tb films re...

  20. Commercializing potassium terbium fluoride, KTF (KTb3F10) faraday crystals for high laser power optical isolator applications (United States)

    Schlichting, Wolfgang; Stevens, Kevin; Foundos, Greg; Payne, Alexis


    Many scientific lasers and increasingly industrial laser systems operate in power regime, require high-performance optical isolators to prevent disruptive light feedback into the laser cavity. The optically active Faraday material is the key optical element inside the isolator. SYNOPTICS has been supplying the laser market with Terbium Gallium Garnet (TGG - Tb3Ga5O12) for many years. It is the most commonly used material for the 650-1100nm range and the key advantages for TGG include its cubic crystal structure for alignment free processing, little to no intrinsic birefringence, and ease of manufacture. However, for high-power laser applications TGG is limited by its absorption at 1064nm and its thermo-optic coefficient, dn/dT. Specifically, thermal lensing and depolarization effects become a limiting factor at high laser powers. While TGG absorption has improved significantly over the past few years, there is an intrinsic limit. Now, SYNOPTICS is commercializing the enhanced new crystal Potassium Terbium Fluoride KTF (KTb3F10) that exhibits much smaller nonlinear refractive index and thermo-optic coefficients, and still exhibits a Verdet constant near that of TGG. This cubic crystal has relatively low absorption and thermo-optic coefficients. It is now fully characterized and available for select production orders. At OPTIFAB in October 2017 we present recent results comparing the performance of KTF to TGG in optical isolators and show SYNOPTICS advances in large volume crystal growth and the production ramp up.

  1. Preparation and photoluminescence enhancement in terbium(III ternary complexes with β-diketone and monodentate auxiliary ligands

    Directory of Open Access Journals (Sweden)

    Devender Singh


    Full Text Available A series of new solid ternary complexes of terbium(III ion based on β-diketone ligand acetylacetone (acac and monodentate auxiliary ligands (aqua/urea/triphenylphosphineoxide/pyridine-N-oxide had been prepared. The structural characterizations of synthesized ternary compounds were studied by means of elemental analysis, infrared (IR, and proton nuclear magnetic resonance (NMR spectral techniques. The optical characteristics were investigated with absorption as well as photoluminescence spectroscopy. Thermal behavior of compounds was examined by TGA/DTA analysis and all metal complexes were found to have good thermal stability. The luminescence decay time of complexes were also calculated by monitoring at emission wavelength corresponding to 5D4 → 7F5 transition. A comparative inspection of the luminescent behavior of prepared ternary compounds was performed in order to determine the function of auxiliary ligands in the enhancement of luminescence intensity produced by central terbium(III ion. The color coordinates values suggested that compounds showed bright green emission in visible region in electromagnetic spectrum. Complexes producing green light could play a significant role in the fabrication of efficient light conversion molecular devices for display purposes and lightning systems.

  2. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip (United States)

    Mahan, John E.


    Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x

  3. Synthesis and luminescent study of Ce{sup 3+}-doped terbium-yttrium aluminum garnet

    Energy Technology Data Exchange (ETDEWEB)

    Dotsenko, V.P., E-mail: [A.V. Bogatsky Physico-Chemical Institute, National Academy of Sciences of Ukraine, Lustdorfskaya doroga 86, 65080 Odessa (Ukraine); Berezovskaya, I.V.; Zubar, E.V.; Efryushina, N.P. [A.V. Bogatsky Physico-Chemical Institute, National Academy of Sciences of Ukraine, Lustdorfskaya doroga 86, 65080 Odessa (Ukraine); Poletaev, N.I.; Doroshenko, Yu.A. [Institute of Combustion and Advanced Technologies, Mechnikov Odessa National University, Dvoryanskaya 2, 65082 Odessa (Ukraine); Stryganyuk, G.B. [Ivan Franko National University of Lviv, Kirilo i Mefodii 8, 79005 Lviv (Ukraine); HASYLAB at DESY, Notkestrasse 85, 22607 Hamburg (Germany); Voloshinovskii, A.S. [Ivan Franko National University of Lviv, Kirilo i Mefodii 8, 79005 Lviv (Ukraine)


    Highlights: Black-Right-Pointing-Pointer Ce{sup 3+}-doped garnets (TYAG) were prepared using nanostructured reagents. Black-Right-Pointing-Pointer The Ce{sup 3+} ions cause a very efficient yellow emission of the samples. Black-Right-Pointing-Pointer The reasons for the long wavelength position of this emission are discussed. Black-Right-Pointing-Pointer Contribution from Al atoms to the conduction band of TYAG is quite essential. - Abstract: Terbium-yttrium aluminum garnets (TYAG) doped with Ce{sup 3+} ions have been prepared by solid state reactions between nanostructured oxides of aluminum and rare earths. The luminescent properties of Ce{sup 3+} ions in (Tb{sub 0.8}Y{sub 0.2}){sub 3(1-x)}Ce{sub 3x}Al{sub 5}O{sub 12} (x = 0.03) have been studied upon excitation in the 2-20 eV region. The substitution of Tb{sup 3+} for Y{sup 3+} in the garnet structure results in broadening the emission band and shifting its maximum towards the longer wavelengths. It was found that in addition to the 4f{sup n} {yields} 4f{sup n-1}5d excitation bands of Ce{sup 3+} and Tb{sup 3+} ions, the excitation spectra for the Ce{sup 3+} emission contain broad bands at 6.73 and {approx}9.5 eV. These bands are attributed to the Ce{sup 3+}-bound exciton formation and O 2p {yields} Al 3s, 3p transitions, respectively. In contrast to the predictions based on the results of electronic structure calculations on Y{sub 3}Al{sub 5}O{sub 12} and Tb{sub 4}Al{sub 2}O{sub 9}, the threshold of interband transitions in TYAG is at high energies ( Greater-Than-Or-Slanted-Equal-To 7.3 eV), and contributions from Al{sub tetr} and Al{sub oct} atoms to the conduction-band density of states are evaluated as quite essential.

  4. Oxidation at through-hole defects in fused slurry silicide coated columbium alloys FS-85 and Cb-752 (United States)

    Levine, S. R.


    Metal recession and interstitial contamination at 0.08-centimeter-diameter through-hole intentional defects in fused slurry silicide coated FS-85 and Cb-752 columbium alloys were studied to determine the tolerance of these materials to coating defects. Five external pressure reentry simulation exposures to 1320 C and 4.7 x 1,000 N/sq m (maximum pressure) resulted in a consumed metal zone having about twice the initial defect diameter for both alloys with an interstitial contamination zone extending about three to four initial defect diameters. Self-healing occurred in the 1.33 x 10 N/sq m, 1320 C exposures and to a lesser extent in internal pressure reentry cycles to 1320 C and 1.33 x 100 N/sq m (maximum pressure).

  5. Interdiffusion and growth of chromium silicide at the interface of Cr/Si(As) system during rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Benkherbache, H. [Universite de M' Sila, (28000) M' Sila (Algeria); Merabet, A., E-mail: merabet_abdelali@yahoo.f [Laboratoire Physique et Mecanique des Materiaux Metalliques, Departement d' O.M.P., Faculte des Sciences de l' Ingenieur, Universite de Setif, (19000) Setif (Algeria)


    In this work, the solid-state reaction between a thin film of chromium and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction and the sheet resistance measurements. The thickness of 100 nm chromium layer has been deposited by electronic bombardment on Si (100) substrates, part of them had previously been implanted with arsenic ions of 10{sup 15} at/cm{sup 2} doses and an energy of 100 keV. The samples were heat treated under rapid thermal annealing at 500 {sup o}C for time intervals ranging from 15 to 60 s. The rapid thermal annealing leads to a reaction at the interface Cr/Si inducing the formation and the growth of the unique silicide CrSi{sub 2}, but no other phase can be detected. For samples implanted with arsenic, the saturation value of the sheet resistance is approximately 1.5 times higher than for the non-implanted case.

  6. Structural variations in terbium(III) complexes with 1,3-adamantanedicarboxylate and diverse co-ligands

    Energy Technology Data Exchange (ETDEWEB)

    Thuéry, Pierre, E-mail:


    Terbium nitrate was reacted with 1,3-adamantanedicarboxylic acid (LH{sub 2}) under solvo-hydrothermal conditions with either N,N-dimethylformamide (DMF) or N,N-dimethylacetamide (DMA) as organic solvents. Hydrolysation of the latter co-solvents resulted in the formation of formate or acetate ions, which are present as co-ligands in the 1D coordination polymer [Tb(L)(HCOO)(H{sub 2}O){sub 2}] (1) and the 2D assembly [Tb(L)(CH{sub 3}COO)(H{sub 2}O)] (2). The increase in dimensionality in the latter arises from the higher connectivity provided by acetate versus formate, the L{sup 2−} ligand being bis-chelating in both cases. The complex [Tb{sub 2}(L){sub 3}(H{sub 2}O){sub 5}][Tb{sub 2}(L){sub 3}(H{sub 2}O){sub 4}]·3H{sub 2}O (3), another 1D species, crystallizes alongside crystals of 2. Further addition of cucurbit[6]uril (CB6), with DMF as co-solvent, gave the two complexes [Tb{sub 2}(L){sub 2}(CB6)(H{sub 2}O){sub 6}](NO{sub 3}){sub 2}·6H{sub 2}O (4) and [H{sub 2}NMe{sub 2}]{sub 2}[Tb(L)(HCOO){sub 2}]{sub 2}·CB6·3H{sub 2}O (5). Complex 4 crystallizes as a 3D framework in which Tb(L){sup +} chains are connected by tetradentate CB6 molecules, while 5 unites a carboxylate-bridged anionic 2D planar assembly and layers of CB6 molecules with counter-cations held at both portals. - Graphical abstract: One- to three-dimensional assemblies are formed in terbium(III) complexes with 1,3-adamantanedicarboxylate obtained under solvo-hydrothermal conditions, these species including formate or acetate co-ligands formed in situ, or additional cucurbit[6]uril molecules. - Highlights: • We report structures of terbium(III) complexes with 1,3-adamantanedicarboxylate. • Solvents able to generate co-ligands or counter-ions in situ have been used. • A 3D species including additional cucurbituril molecules is decribed. • One species displays an alternation of metal–organic and organic sheets.

  7. Complete Stokes polarimetry of magneto-optical Faraday effect in a terbium gallium garnet crystal at cryogenic temperatures. (United States)

    Majeed, Hassaan; Shaheen, Amrozia; Anwar, Muhammad Sabieh


    We report the complete determination of the polarization changes caused in linearly polarized incident light due to propagation in a magneto-optically active terbium gallium garnet (TGG) single crystal, at temperatures ranging from 6.3 to 300 K. A 28-fold increase in the Verdet constant of the TGG crystal is seen as its temperature decreases to 6.3 K. In contrast with polarimetry of light emerging from a Faraday material at room temperature, polarimetry at cryogenic temperatures cannot be carried out using the conventional fixed polarizer-analyzer technique because the assumption that ellipticity is negligible becomes increasingly invalid as temperature is lowered. It is shown that complete determination of light polarization in such a case requires the determination of its Stokes parameters, otherwise inaccurate measurements will result with negative implications for practical devices.

  8. Development of Optical Isolators for Visible Light Using Terbium Aluminum Garnet (Tb3Al5O12) Single Crystals (United States)

    Geho, Mikio; Takagi, Takashi; Chiku, Shinichiro; Fujii, Takashi


    We have recently reported the successful growth of incongruently melting terbium aluminum garnet (Tb3Al5O12; TAG) single crystals by the hybrid laser FZ (floating zone) method. Optical property evaluations confirmed a high transmittance and a larger Verdet constant than conventional Tb3Ga5O12 (TGG) crystals and/or Faraday glasses. In this study, we attempted to design, fabricate, and evaluate optical isolators in visible light through near-infrared (NIR) regions using TAG crystals. A finite element method (FEM) simulation of possible models led us to the preferable one based on a radially magnetized magnet. To realize this, we employed a pseudo-radially magnetized magnet. The target wavelengths of the prototype device were 408, 808, and 1064 nm. The typical extinction ratio was more than 30 dB and the insertion loss was less than 0.3 dB for AR-coated devices.

  9. Effect of P{sup +} ions on the microstructure and the nature of the formed silicides in the Cr/Si system

    Energy Technology Data Exchange (ETDEWEB)

    Mirouh, K. [Laboratoire des Couches Minces et Interfaces, Departement de Physique, Universite de Constantine, Campus chaab Errassas, Constantine 25000 (Algeria)]. E-mail:; Bouabellou, A. [Laboratoire des Couches Minces et Interfaces, Departement de Physique, Universite de Constantine, Campus chaab Errassas, Constantine 25000 (Algeria); Halimi, R. [Laboratoire des Couches Minces et Interfaces, Departement de Physique, Universite de Constantine, Campus chaab Errassas, Constantine 25000 (Algeria); Karaali, A. [Laboratoire des Couches Minces et Interfaces, Departement de Physique, Universite de Constantine, Campus chaab Errassas, Constantine 25000 (Algeria); Mosser, A. [IPCMS-GSI, 23 rue du Loess, F-67037 Strasbourg (France); Ehret, G. [IPCMS-GSI, 23 rue du Loess, F-67037 Strasbourg (France)


    The effect of the phosphorus on the microstructure and on the nature of the formed silicide in the annealed Cr/Si system is studied. The chromium layer is deposited by electron gun evaporation on the undoped and P{sup +} doped monocrystalline silicon. Cross-sectional transmission electron microscopy (XTEM) investigation of the samples, annealed at 475 deg. C for different times, shows that the presence of phosphorus leads to the formation of CrSi{sub 2} disilicide, free of defects, and Cr{sub 3}Si silicide for lower and higher annealing times, respectively. In the case of undoped substrate the formed CrSi{sub 2} disilicide is stable and contains a high concentration of stacking faults when the chromium is partially consumed.

  10. Vertically grown multiwalled carbon nanotube anode and nickel silicide integrated high performance microsized (1.25 μl) microbial fuel cell

    KAUST Repository

    Mink, Justine E.


    Microbial fuel cells (MFCs) are an environmentally friendly method for water purification and self-sustained electricity generation using microorganisms. Microsized MFCs can also be a useful power source for lab-on-a-chip and similar integrated devices. We fabricated a 1.25 μL microsized MFC containing an anode of vertically aligned, forest type multiwalled carbon nanotubes (MWCNTs) with a nickel silicide (NiSi) contact area that produced 197 mA/m 2 of current density and 392 mW/m 3 of power density. The MWCNTs increased the anode surface-to-volume ratio, which improved the ability of the microorganisms to couple and transfer electrons to the anode. The use of nickel silicide also helped to boost the output current by providing a low resistance contact area to more efficiently shuttle electrons from the anode out of the device. © 2012 American Chemical Society.

  11. Behavior of silicon in nitric media. Application to uranium silicides fuels reprocessing; Comportement du silicium en milieu nitrique. Application au retraitement des combustibles siliciures d'uranium

    Energy Technology Data Exchange (ETDEWEB)

    Cheroux, L


    Uranium silicides are used in some research reactors. Reprocessing them is a solution for their cycle end. A list of reprocessing scenarios has been set the most realistic being a nitric dissolution close to the classic spent fuel reprocessing. This uranium silicide fuel contains a lot of silicon and few things are known about polymerization of silicic acid in concentrated nitric acid. The study of this polymerization allows to point out the main parameters: acidity, temperature, silicon concentration. The presence of aluminum seems to speed up heavily the polymerization. It has been impossible to find an analytical technique smart and fast enough to characterize the first steps of silicic acid polymerization. However the action of silicic species on emulsions stabilization formed by mixing them with an organic phase containing TBP has been studied, Silicon slows down the phase separation by means of oligomeric species forming complex with TBP. The existence of these intermediate species is short and heating can avoid any stabilization. When non irradiated uranium silicide fuel is attacked by a nitric solution, aluminum and uranium are quickly dissolved whereas silicon mainly stands in solid state. That builds a gangue of hydrated silica around the uranium silicide particulates without preventing uranium dissolution. A small part of silicon passes into the solution and polymerize towards the highly poly-condensed forms, just 2% of initial silicon is still in molecular form at the end of the dissolution. A thermal treatment of the fuel element, by forming inter-metallic phases U-Al-Si, allows the whole silicon to pass into the solution and next to precipitate. The behavior of silicon in spent fuels should be between these two situations. (author)

  12. Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Molnár, G., E-mail:; Dózsa, L.; Erdélyi, R.; Vértesy, Z.; Osváth, Z.


    Highlights: • Epitaxial iron silicide nanostructures were grown on Si(1 1 1) and Si(0 0 1) substrates. • The size and shape of the particles are the function of the thickness and annealing. • The local current–voltage characteristics were measured by conductive AFM. • The different size and shape nanoparticles show similar I–V characteristics. • The tip current is dominated in few nm size sites, visible in the AFM phase image. - Abstract: Epitaxial iron silicide nanostructures are grown by solid phase epitaxy on Si(0 0 1) and Si(1 1 1), and by reactive deposition epitaxy on Si(0 0 1) substrates. The formation process is monitored by reflection high-energy electron diffraction. The morphology, size, and electrical properties of the nanoparticles are investigated by scanning electron microscopy, by electrically active scanning probe microscopy, and by confocal Raman spectroscopy. The results show that the shape, size, orientation, and density of the nanoobjects can be tuned by self-assembly, controlled by the lattice misfit between the substrates and iron silicides. The size distribution and shape of the grown nanoparticles depend on the substrate orientation, on the initial thickness of the evaporated iron, on the temperature and time of the annealing, and on the preparation method. The so-called Ostwald ripening phenomena, which state that the bigger objects develop at the expense of smaller ones, controls the density of the nanoparticles. Raman spectra show the bigger objects do not contain β-FeSi{sub 2} phase. The different shape nanoparticles exhibit small, about 100 mV barrier compared to the surrounding silicon. The local leakage current of the samples measured by conductive AFM using a Pt coated Si tip is localized in a few nanometers size sites, and the sites which we assume are very small silicide nanoparticles or point defects.

  13. Simultaneous aluminizing and chromizing of steels to form (Fe,Cr){sub 3}Al coatings and Ge-doped silicide coatings of Cr-Zr base alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, M.; He, Y.R.; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering


    A halide-activated cementation pack involving elemental Al and Cr powders has been used to achieve surface compositions of approximately Fe{sub 3}Al plus several percent Cr for low alloy steels (T11, T2 and T22) and medium carbon steel (1045 steel). A two-step treatment at 925 C and 1150 C yields the codeposition and diffusion of aluminum and chromium to form dense and uniform ferrite coatings of about 400 {micro}m thickness, while preventing the formation of a blocking chromium carbide at the substrate surfaces. Upon cyclic oxidation in air at 700 C, the coated steel exhibits a negligible 0.085 mg/cm{sup 2} weight gain for 1900 one-hour cycles. Virtually no attack was observed on coated steels tested at ABB in simulated boiler atmospheres at 500 C for 500 hours. But coatings with a surface composition of only 8 wt% Al and 6 wt% Cr suffered some sulfidation attack in simulated boiler atmospheres at temperatures higher than 500 C for 1000 hours. Two developmental Cr-Zr based Laves phase alloys (CN129-2 and CN117(Z)) were silicide/germanide coated. The cross-sections of the Ge-doped silicide coatings closely mimicked the microstructure of the substrate alloys. Cyclic oxidation in air at 1100 C showed that the Ge-doped silicide coating greatly improved the oxidation resistance of the Cr-Zr based alloys.

  14. A hydrometallurgical process for the recovery of terbium from fluorescent lamps: Experimental design, optimization of acid leaching process and process analysis. (United States)

    Innocenzi, Valentina; Ippolito, Nicolò Maria; De Michelis, Ida; Medici, Franco; Vegliò, Francesco


    Terbium and rare earths recovery from fluorescent powders of exhausted lamps by acid leaching with hydrochloric acid was the objective of this study. In order to investigate the factors affecting leaching a series of experiments was performed in according to a full factorial plan with four variables and two levels (4 2 ). The factors studied were temperature, concentration of acid, pulp density and leaching time. Experimental conditions of terbium dissolution were optimized by statistical analysis. The results showed that temperature and pulp density were significant with a positive and negative effect, respectively. The empirical mathematical model deducted by experimental data demonstrated that terbium content was completely dissolved under the following conditions: 90 °C, 2 M hydrochloric acid and 5% of pulp density; while when the pulp density was 15% an extraction of 83% could be obtained at 90 °C and 5 M hydrochloric acid. Finally a flow sheet for the recovery of rare earth elements was proposed. The process was tested and simulated by commercial software for the chemical processes. The mass balance of the process was calculated: from 1 ton of initial powder it was possible to obtain around 160 kg of a concentrate of rare earths having a purity of 99%. The main rare earths elements in the final product was yttrium oxide (86.43%) following by cerium oxide (4.11%), lanthanum oxide (3.18%), europium oxide (3.08%) and terbium oxide (2.20%). The estimated total recovery of the rare earths elements was around 70% for yttrium and europium and 80% for the other rare earths. Copyright © 2016 Elsevier Ltd. All rights reserved.

  15. Investigation of the luminescent properties of terbium-anthranilate complexes and application to the determination of anthranilic acid derivatives in aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Arnaud, N.; Georges, J


    The luminescent properties of terbium complexes with furosemide (FR), flufenamic (FF) acid, tolfenamic (TF) acid and mefenamic (MF) acid have been investigated in aqueous solutions. For all four compounds, complexation occurs when the carboxylic acid of the aminobenzoic group is dissociated and is greatly favoured in the presence of trioctylphosphine oxide as co-ligand and Triton X-100 as surfactant. Under optimum conditions, luminescence of the lanthanide ion is efficiently sensitised and the lifetime of the {sup 5}D{sub 4} resonance level of terbium in the complex is ranging between 1 and 1.9 ms, against 0.4 ms for the aqua ion. The sensitivity of the method for the determination of anthranilic acid derivatives is improved by one to two orders of magnitude with respect to that achieved using native fluorescence or terbium-sensitised luminescence in methanol. The limits of detection are 2x10{sup -10}, 5x10{sup -10} and 2x10{sup -9} mol l{sup -1} for flufenamic acid, furosemide and tolfenamic acid, and mefenamic acid, respectively, with within-run RSD values of less than 1%. The method has been applied to the determination of flufenamic acid in spiked calf sera with and without sample pretreatment. Depending on the method and the analyte concentration, the recovery was ranging between 83 and 113% and the lowest concentration attainable in serum samples was close to 1x10{sup -7} mol l{sup -1}.

  16. Effect of deposition conditions on the structure, phase composition and electrical properties of the chromium silicide films

    Energy Technology Data Exchange (ETDEWEB)

    Trofimov, V I [Institute of Radioengineering and Electronics, 11/7 Mokhovaya Str., 125009 Moscow (Russian Federation); Kim, J [CN-Regional Innovation Agency, 244-19 Songgok-ri, Asan City, 336-813 (Korea, Republic of); Bae, S [University of Incheon, 177 Dohwa-Dong, Incheon City, 402-749 (Korea, Republic of)], E-mail:


    Thin chromium silicide films with thickness up to 20 nm were deposited by flash evaporation of CrSi{sub 2} powder onto silica glass and (100) KCl substrates at temperatures from 20 to 550{sup 0}C and analyzed by electrical resistance measurements and transmission electron microscopy. The film phase composition depends crucially on deposition procedure: if a CrSi{sub 2} powder was thermally treated just prior deposition, CrSi{sub 2} film grows otherwise Cr{sub 3}Si film is formed. Under deposition onto unheated substrate an amorphous film grows. A crystalline phase appears at {approx}280 deg. C for CrSi{sub 2} and 250 deg. C for Cr{sub 3}Si and furtheron its fraction increases. The CrSi{sub 2} film consists of densely packed crystallites, whereas Cr{sub 3}Si film structure resembles a network of fine crystallites imbedded into amorphous silicon-based matrix. The resistivity of CrSi{sub 2} film grows with substrate temperature, whereas that of Cr{sub 3}Si film reduces. The observed resistivity - film thickness dependence is well described by the Fuchs-Sondheimer model for CrSi{sub 2} films and Mayadas-Shatzkes model for Cr{sub 3}Si films, since in the formers the crystallites size is larger than a film thickness, whereas in the latter's it is less than a film thickness.

  17. Effect of deposition conditions on the structure, phase composition and electrical properties of the chromium silicide films (United States)

    Trofimov, V. I.; Kim, J.; Bae, S.


    Thin chromium silicide films with thickness up to 20 nm were deposited by flash evaporation of CrSi2 powder onto silica glass and (100) KCl substrates at temperatures from 20 to 550°C and analyzed by electrical resistance measurements and transmission electron microscopy. The film phase composition depends crucially on deposition procedure: if a CrSi2 powder was thermally treated just prior deposition, CrSi2 film grows otherwise Cr3Si film is formed. Under deposition onto unheated substrate an amorphous film grows. A crystalline phase appears at ~280°C for CrSi2 and 250°C for Cr3Si and furtheron its fraction increases. The CrSi2 film consists of densely packed crystallites, whereas Cr3Si film structure resembles a network of fine crystallites imbedded into amorphous silicon-based matrix. The resistivity of CrSi2 film grows with substrate temperature, whereas that of Cr3Si film reduces. The observed resistivity - film thickness dependence is well described by the Fuchs-Sondheimer model for CrSi2 films and Mayadas-Shatzkes model for Cr3Si films, since in the formers the crystallites size is larger than a film thickness, whereas in the latter's it is less than a film thickness.

  18. Mechanical properties of thermoelectric n-type magnesium silicide synthesized employing in situ spark plasma reaction sintering (United States)

    Muthiah, Saravanan; Singh, R. C.; Pathak, B. D.; Dhar, Ajay


    Thermoelectric devices employing magnesium silicide (Mg2Si) offer an inexpensive and non-toxic solution for green energy generation compared to other existing conventional thermoelectric materials in the mid-temperature range. However, apart from the thermoelectric performance, their mechanical properties are equally important in order to avoid the catastrophic failure of their modules during actual operation. In the present study, we report the synthesis of Mg2Si co-doped with Bi and Sb employing in situ spark plasma reaction sintering and investigate its broad range of mechanical properties. The mechanical properties of the sintered co-doped Mg2Si suggest a significantly enhanced value of hardness ~5.4  ±  0.2 GPa and an elastic modulus ~142.5  ±  6 GPa with a fracture toughness of ~1.71  ±  0.1 MPa  √m. The thermal shock resistance, which is one of the most vital parameter for designing thermoelectric devices, was found to be ~300 W m-1, which is higher than most of the other existing state-of-the-art mid-temperature thermoelectric materials. The friction and wear characteristics of sintered co-doped Mg2Si have been reported for the first time, in order to realize the sustainability of their thermoelectric modules under actual hostile environmental conditions.

  19. Structural investigation and photoluminescent properties of gadolinium(III), europium(III) and terbium(III) 3-mercaptopropionate complexes. (United States)

    Souza, E R; Mazali, I O; Sigoli, F A


    This work reports on the synthesis, crystallographic determination and spectroscopic characterization of gadolinium(III), terbium(III) and europium(III) 3-mercaptopropionate complexes, aqua-tris(3-mercaptopropionate)lanthanide(III)--[Ln(mpa)3(H2O)]. The Judd-Ofelt intensity parameters were experimentally determined from emission spectrum of the [Eu(mpa)3(H2O)]complex and they were also calculated from crystallographic data. The complexes are coordination polymers, where the units of each complex are linked together by carboxylate groups leading to an unidimensional and parallel chains that by chemical interactions form a tridimensional framework. The emission spectrum profile of the [Eu(mpa)3(H2O)] complex is discussed based on point symmetry of the europium(III) ion, that explains the bands splitting observed in its emission spectrum. Photoluminescent analysis of the [Gd(mpa)3(H2O)] complex show no efficient ligand excitation but an intense charge transfer band. The excitation spectra of the [Eu(mpa)3(H2O)] and [Tb(mpa)3(H2O)] complexes do not show evidence of energy transfer from the ligand to the excited levels of these trivalent ions. Therefore the emission bands are originated only by direct f-f intraconfigurational excitation of the lantanide(III) ions.

  20. Fluorometric determination of proteins using the terbium (III)-2-thenoyltrifluoroacetone-sodium dodecyl benzene sulfonate-protein system

    Energy Technology Data Exchange (ETDEWEB)

    Jia Zhen [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China); Department of Chemistry, Dezhou University, Dezhou 253023 (China); Yang Jinghe [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China)]. E-mail:; Wu Xia [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China); Wang Fei [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China); Guo Changying [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China); Liu Shufang [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China)


    It is found that in hexamethylene tetramine (HMTA)-HCl buffer of pH=8.00, proteins can enhance the fluorescence of terbium (III) (Tb{sup 3+})-2-thenoyltrifluoroacetone (TTA)-sodium dodecyl benzene sulfonate (SDBS) system. Based on this, a sensitive method for the determination of proteins is proposed. The experiments indicate that under the optimum conditions, the enhanced fluorescence intensity is in proportion to the concentration of proteins in the range of 4.0x10{sup -9}-7.5x10{sup -6}g/mL for bovine serum albumin (BSA), 5.0x10{sup -9}-1.5x10{sup -5}g/mL for human serum albumin (HSA), 1.0x10{sup -8}-7.5x10{sup -6}g/mL for egg albumin (EA). Their detection limits (S/N=3) are 0.5, 0.8 and 2.0ng/mL, respectively. The interaction mechanism is also studied.

  1. Terbium to Quantum Dot FRET Bioconjugates for Clinical Diagnostics: Influence of Human Plasma on Optical and Assembly Properties

    Directory of Open Access Journals (Sweden)

    Niko Hildebrandt


    Full Text Available Förster resonance energy transfer (FRET from luminescent terbium complexes (LTC as donors to semiconductor quantum dots (QDs as acceptors allows extraordinary large FRET efficiencies due to the long Förster distances afforded. Moreover, time-gated detection permits an efficient suppression of autofluorescent background leading to sub-picomolar detection limits even within multiplexed detection formats. These characteristics make FRET-systems with LTC and QDs excellent candidates for clinical diagnostics. So far, such proofs of principle for highly sensitive multiplexed biosensing have only been performed under optimized buffer conditions and interactions between real-life clinical media such as human serum or plasma and LTC-QD-FRET-systems have not yet been taken into account. Here we present an extensive spectroscopic analysis of absorption, excitation and emission spectra along with the luminescence decay times of both the single components as well as the assembled FRET-systems in TRIS-buffer, TRIS-buffer with 2% bovine serum albumin, and fresh human plasma. Moreover, we evaluated homogeneous LTC-QD FRET assays in QD conjugates assembled with either the well-known, specific biotin-streptavidin biological interaction or, alternatively, the metal-affinity coordination of histidine to zinc. In the case of conjugates assembled with biotin-streptavidin no significant interference with the optical and binding properties occurs whereas the histidine-zinc system appears to be affected by human plasma.

  2. Evidence of mass exchange between inside and outside of sonoluminescing bubble in aqueous solution of terbium chloride

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Jinfu, E-mail: [School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001 (China); Chen, Weizhong, E-mail: [The Key Laboratory of Modern Acoustics, Ministry of Education, Institution of Acoustics, Nanjing University, Nanjing 210093 (China); Wang, Xun; Yang, Jing; Chen, Zhan [The Key Laboratory of Modern Acoustics, Ministry of Education, Institution of Acoustics, Nanjing University, Nanjing 210093 (China)


    Highlights: • Time-resolved spectra of SBSL were obtained for Tb{sup 3+} ions emission lines. • Mass exchange between inside and outside of SL bubble was probed via Tb{sup 3+} ions lines. • The argon rectification hypothesis was tested by time-resolved spectra of SBSL. • The rate of mass exchange inside an SBSL bubble increases with increasing sound pressure. - Abstract: Spectra of single-bubble sonoluminescence (SBSL) were obtained for Tb{sup 3+} ions emission lines from bubbles in an aqueous solution of terbium chloride (TbCl{sub 3}). The spectra provide experimental evidence to prove that an air bubble driven by strong ultrasound will not eventually become a rectified pure argon bubble, which is not as predicted by the argon rectification hypothesis. The time-resolved spectra of SBSL show a mass exchange of material such as Tb{sup 3+} ions between the inside and outside of the bubble. With increasing sound pressure, the rate of mass exchange and the SBSL intensity increases.

  3. Optical properties and electrical transport of thin films of terbium(III bis(phthalocyanine on cobalt

    Directory of Open Access Journals (Sweden)

    Peter Robaschik


    Full Text Available The optical and electrical properties of terbium(III bis(phthalocyanine (TbPc2 films on cobalt substrates were studied using variable angle spectroscopic ellipsometry (VASE and current sensing atomic force microscopy (cs-AFM. Thin films of TbPc2 with a thickness between 18 nm and 87 nm were prepared by organic molecular beam deposition onto a cobalt layer grown by electron beam evaporation. The molecular orientation of the molecules on the metallic film was estimated from the analysis of the spectroscopic ellipsometry data. A detailed analysis of the AFM topography shows that the TbPc2 films consist of islands which increase in size with the thickness of the organic film. Furthermore, the cs-AFM technique allows local variations of the organic film topography to be correlated with electrical transport properties. Local current mapping as well as local I–V spectroscopy shows that despite the granular structure of the films, the electrical transport is uniform through the organic films on the microscale. The AFM-based electrical measurements allow the local charge carrier mobility of the TbPc2 thin films to be quantified with nanoscale resolution.

  4. Highly luminescent charge-neutral europium(iii) and terbium(iii) complexes with tridentate nitrogen ligands. (United States)

    Senthil Kumar, Kuppusamy; Schäfer, Bernhard; Lebedkin, Sergei; Karmazin, Lydia; Kappes, Manfred M; Ruben, Mario


    We report on the synthesis of tridentate-nitrogen pyrazole-pyridine-tetrazole (L(1)H) and pyrazole-pyridine-triazole (L(2)H) ligands and their complexation with lanthanides (Ln = Gd(iii), Eu(iii) and Tb(iii)) resulting in stable, charge-neutral complexes Ln(L(1))3 and Ln(L(2))3, respectively. X-ray crystallographic analysis of the complexes with L(1) ligands revealed tricapped trigonal coordination geometry around the lanthanide ions. All complexes show bright photoluminescence (PL) in the solid state, indicating efficient sensitization of the lanthanide emission via the triplet states of the ligands. In particular, the terbium complexes show high PL quantum yields of 65 and 59% for L(1) and L(2), respectively. Lower PL efficiencies of the europium complexes (7.5 and 9%, respectively) are attributed to large energy gaps between the triplet states of the ligands and accepting levels of Eu(iii). The triplet state energy can be reduced by introducing an electron withdrawing (EW) group at the 4 position of the pyridine ring. Such substitution of L(1)H with a carboxylic ester (COOMe) EW group leads to a europium complex with increased PL quantum yield of 31%. A comparatively efficient PL of the complexes dissolved in ethanol indicates that the lanthanide ions are shielded against nonradiative deactivation via solvent molecules.

  5. Micelle enhanced and terbium sensitized spectrofluorimetric determination of danofloxacin in milk using molecularly imprinted solid phase extraction (United States)

    Kaur, Kuldeep; Saini, Shivender Singh; Malik, Ashok Kumar; Singh, Baldev


    An efficient molecularly imprinted solid phase extraction (MISPE)-spectrofluorimetric method was developed to sensitively determine danofloxacin (DAN) in milk samples. Solid phase extraction procedure using MISPE cartridges was first performed on milk samples and then spectrofluorimetric determination was done at 546 nm using an excitation wavelength of 285 nm in presence of terbium and sodium dodecyl benzene sulfonate (SDBS). It was found that SDBS significantly enhanced the fluorescence intensity of the DAN-Tb3+ complex. Various factors affecting the fluorescence intensity of DAN-Tb3+-SDBS system were studied and conditions were optimized. The enhanced fluorescence intensity of the system (ΔF) showed a good linear relationship with the concentration of DAN over the range of 8.4 × 10-9-3.4 × 10-7 mol L-1 with a correlation coefficient of 0.9996. The detection limit was determined as 2.0 × 10-9 mol L-1 and the limit of quantification was determined as 6.5 × 10-9 mol L-1. The MISPE-spectrofluorimetric procedure was successfully applied to the determination of DAN in milk samples. The method is simple, rapid, sensitive and allows interference free determination of DAN in complex fluorescent matrices like milk. The method can be used to determine whether the DAN residues in milk exceed MRLs or not.

  6. Study of quantum dot based on tin/yttrium mixed oxide doped with terbium to be used as biomarker

    Energy Technology Data Exchange (ETDEWEB)

    Paganini, Paula P.; Felinto, Maria Claudia F.C.; Kodaira, Claudia A., E-mail: paulapaganini@usp.b, E-mail: mfelinto@ipen.b, E-mail: [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Brito, Hermi F., E-mail: hefbrito@iq.usp.b [Universidade de Sao Paulo (USP), SP (Brazil). Inst. de Quimica. Lab. de Elementos do Bloco f; Nunes, Luiz Antonio O., E-mail: luizant@ifsc.usp.b [Universidade de Sao Paulo (USP), Sao Carlos, SP (Brazil). Inst. de Fisica. Dept. de Fisica e Informatica


    Quantum dots (semiconductors nanocrystals) have brought a promising field to develop a new generation of luminescent biomarkers. The use of lanthanides ions as luminescent markers has many advantages, for example a security method, low cost, high specificity and also the luminescence can be promptly measured with high sensibility and accuracy. These luminescent dots are functionalized with biomolecules. For the luminophore particle to be connect with biologicals molecules (for example covalent antibody) is necessary a previous chemical treatment to modify luminophore particle surface and this process is called functionalization. A prior chemical treatment with changes on the surface luminophore particle is necessary to couple the luminophore to biological molecules. This process can be used as coating which can protect these particles from being dissolved by acid as well as provide functional groups for biological conjugation. This work presents a photoluminescence study of nanoparticles based on tin/yttrium mixed oxides doped with terbium (SnO{sub 2}/Y{sub 2}O{sub 3}:Tb{sup 3+}), synthesized by coprecipitation method. The nanoparticles were submitted to thermal treatment and characterized by X-Ray Powder Diffraction (XRD) that showed cassiterite phase formation and the influence of thermal treatment on nanoparticles structures. These nanoparticles going to be functionalized with a natural polysaccharide (chitosan) in order to form microspheres. These microspheres going to be irradiated with gamma radiation to sterilization and it can be evaluated if the nanoparticles are resistant to irradiation and they do not lose functionality with this process. (author)

  7. Modification by H-termination in growth process of titanium silicide on Si(0 0 1)-2 x 1 observed with scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Aoki, T., E-mail: [Faculty of Engineering, Yokohama National University, Tokiwadai 79-5, Hodogaya-ku, Yokohama 240-8501 (Japan); Shudo, K.; Sato, K.; Ohno, S.; Nishioka, H.; Iida, T.; Toramaru, M.; Tanaka, M. [Faculty of Engineering, Yokohama National University, Tokiwadai 79-5, Hodogaya-ku, Yokohama 240-8501 (Japan)


    Formation processes of titanium silicide on hydrogen-terminated H/Si(0 0 1)-2 x 1 surface are studied at the atomic scale with a scanning tunneling microscopy (STM). Square-shaped nanoislands were observed on the Ti/H/Si(0 0 1) surface after annealed at 873-1073 K. These are the epitaxial nanoislands moderately grown due to the local orientation relationship between C49-TiSi{sub 2} and Si(0 0 1), because passivation by surface hydrogen on Si(0 0 1) suppresses active and complex bond formation of Ti-Si.

  8. Effect of Chemistry and Particle Size on the Performance of Calcium Disilicide Primers. Part 1 - Synthesis of Calcium Silicide (CaSi2) by Rotary Atomization (United States)


    reactions 1 and 2, respectively. A general rule of thumb for thermite reactions is that when the heat of formation per gram of product is lower than -1.6 kJ...34Calcium Silicide, CaSk" J. Chem. Soc Abstr. 82, II, 320, 1902. 2. Goldschmidt, H., "New Thermite Reactions, Iron Age, 82, 232, 1908. 3. MIL-C-324...Highway 361 Crane, IN 47522-5001 ATK Small Caliber System ATTN: M. Mansfield D. Clark R. Carpenter N. Tharp Lake City Army Ammunition Plant P.O. Box 1000 Independence, MO 64051-1000 16

  9. Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors (United States)

    Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Lee, Yong Hee; Joo, Seung Ki


    Low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated via metal-induced crystallization (MIC) are attractive candidates for use in active-matrix flat-panel displays. However, these exhibit a large leakage current due to the nickel silicide being trapped at the grain boundaries of the poly-Si. We reduced the leakage current of the MIC poly-Si TFTs by developing a gettering method to remove the Ni impurities using a Si getter layer and natively-formed SiO2 as the etch stop interlayer. The Ni trap state density (Nt) in the MIC poly-Si film decreased after the Ni silicide gettering, and as a result, the leakage current of the MIC poly-Si TFTs decreased. Furthermore, the leakage current of MIC poly-Si TFTs gradually decreased with additional gettering. To explain the gettering effect on MIC poly-Si TFTs, we suggest an appropriate model. He received the B.S. degree in School of Advanced Materials Engineering from Kookmin University, Seoul, South Korea in 2012, and the M.S. degree in Department of Materials Science and Engineering from Seoul National University, Seoul, South Korea in 2014. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and top-gate polycrystalline-silicon thin-film transistors. He received the M.S. degree in innovation technology from Ecol Polytechnique, Palaiseau, France in 2013. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and copper

  10. Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Inhye [Department of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea and System LSI Manufacturing Operation Center, Samsung Electronics Co., Ltd, Gyeonggi-do 17113 (Korea, Republic of); Park, Jingyu; Jeon, Heeyoung; Kim, Hyunjung; Shin, Changhee [Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Shin, Seokyoon; Lee, Kunyoung [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Jeon, Hyeongtag, E-mail: [Department of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea and Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 04763 (Korea, Republic of)


    In this study, the effects of a thin Ru interlayer on the thermal and morphological stability of NiSi have been investigated. Ru and Ni thin films were deposited sequentially to form a Ni/Ru/Si bilayered structure, without breaking the vacuum, by remote plasma atomic layer deposition (RPALD) on a p-type Si wafer. After annealing at various temperatures, the thermal stabilities of the Ni/Ru/Si and Ni/Si structures were investigated by various analysis techniques. The results showed that the sheet resistance of the Ni/Ru/Si sample was consistently lower compared to the Ni/Si sample over the entire temperature range. Although both samples exhibited the formation of NiSi{sub 2} phases at an annealing temperature of 800 °C, as seen with glancing angle x-ray diffraction, the peaks of the Ni/Ru/Si sample were observed to have much weaker intensities than those obtained for the Ni/Si sample. Moreover, the NiSi film with a Ru interlayer exhibited a better interface and improved surface morphologies compared to the NiSi film without a Ru interlayer. These results show that the phase transformation of NiSi to NiSi{sub 2} was retarded and that the smooth NiSi/Si interface was retained due to the activation energy increment for NiSi{sub 2} nucleation that is caused by adding a Ru interlayer. Hence, it can be said that the Ru interlayer deposited by RPALD can be used to control the phase transformation and physical properties of nickel silicide phases.

  11. Terbium-doped gadolinium oxysulfide (Gd2O2S:Tb) scintillation-based polymer optical fibre sensor for real time monitoring of radiation dose in oncology (United States)

    Lewis, E.; O'Keeffe, S.; Grattan, M.; Hounsell, A.; McCarthy, D.; Woulfe, P.; Cronin, J.; Mihai, L.; Sporea, D.; Santhanam, A.; Agazaryan, N.


    A PMMA based plastic optical fibre sensor for use in real time radiotherapy dosimetry is presented. The optical fibre tip is coated with a scintillation material, terbium-doped gadolinium oxysulfide (Gd2O2S:Tb), which fluoresces when exposed to ionising radiation (X-Ray). The emitted visible light signal penetrates the sensor optical fibre and propagates along the transmitting fibre at the end of which it is remotely monitored using a fluorescence spectrometer. The results demonstrate good repeatability, with a maximum percentage error of 0.5% and the response is independent of dose rate.

  12. Carrier-transport mechanism of Er-silicide Schottky contacts to strained-silicon-on-insulator and silicon-on-insulator. (United States)

    Jyothi, I; Janardhanam, V; Kang, Min-Sung; Yun, Hyung-Joong; Lee, Jouhahn; Choi, Chel-Jong


    The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively. The barrier height of the sSOI structure was observed to be lower than that of the SoI structure despite the formation of a Schottky contact using the same metal silicide. The sSOI structure exhibited better rectification and higher current level than the SOI structure, which could be associated with a reduction in the band gap of Si caused by strain. The generation-recombination mechanism was found to be dominant in the forward bias for both structures. Carrier generation along with the Poole-Frenkel mechanism dominated the reverse-biased current in the SOI structure. The saturation tendency of the reverse leakage current in the sSOI structure could be attributed to strain-induced defects at the interface in non-lattice-matched structures.

  13. 45Sc Solid State NMR studies of the silicides Sc TSi ( T=Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt) (United States)

    Harmening, Thomas; Eckert, Hellmut; Fehse, Constanze M.; Sebastian, C. Peter; Pöttgen, Rainer


    The silicides Sc TSi ( T=Fe, Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt) were synthesized by arc-melting and characterized by X-ray powder diffraction. The structures of ScCoSi, ScRuSi, ScPdSi, and ScIrSi were refined from single crystal diffractometer data. These silicides crystallize with the TiNiSi type, space group Pnma. No systematic influences of the 45Sc isotropic magnetic shift and nuclear electric quadrupolar coupling parameters on various structural distortion parameters calculated from the crystal structure data can be detected. 45Sc MAS-NMR data suggest systematic trends in the local electronic structure probed by the scandium atoms: both the electric field gradients and the isotropic magnetic shifts relative to a 0.2 M aqueous Sc(NO 3) 3 solution decrease with increasing valence electron concentration and within each T group the isotropic magnetic shift decreases monotonically with increasing atomic number. The 45Sc nuclear electric quadrupolar coupling constants are generally well reproduced by quantum mechanical electric field gradient calculations using the WIEN2k code.

  14. Synthesis of nano-patterned and Nickel Silicide embedded amorphous Si thin layer by ion implantation for higher efficiency solar devices (United States)

    Bhowmik, D.; Bhattacharjee, S.; Lavanyakumar, D.; Naik, V.; Satpati, B.; Karmakar, P.


    We report the ion beam based single step synthesis process of surface-patterned amorphous Silicon (a-Si) with a buried plasmon active nickel silicide layer for the realization of cost-effective, higher efficiency Silicon (Si) photovoltaic devices. Simultaneous amorphization, surface pattern formation and buried layer development are achieved by normal incidence 10 keV Ni1+ ion bombardment on Si(100) surface at a fluence of 1 × 1017. Atomic Force Microscopy study shows rim-surrounded crater like periodic nanostructure on the surface whereas cross-sectional Transmission Electron Microscopy detects the amorphization and implant buried layer just below the surface. The distribution of implanted Ni ions and Si vacancies, obtained by the Monte Carlo simulation (SRIM) is consistent with the experimental results. Spatially resolved Electron Energy Loss Spectroscopy measurement detects that the buried layer is nickel silicide. The potential application of such nano-patterned and plasmon active system for future low-cost a-Si based higher efficient Photovoltaic devices is discussed.

  15. Thermoelectric characteristics of iron silicide thermoelectric converter with the transition metallic compound as an additive; Sen`i kinzoku kagobutsu wo tenkabutsu to shita keikatetsu netsuden soshi no netsuden tokusei

    Energy Technology Data Exchange (ETDEWEB)

    Hayashibara, M.; Oda, M. [Hitachi, Ltd., Tokyo (Japan)


    The thin film must be converted into a bulky shape in order that the high electric power may be produced by the iron silicide thermoelectric converter. Study was then made to establish the homogeneous bulk production method, in which the additive must diffuse sufficiently in the iron silicide and bond strongly to it during the sintering. Selected as an additive in the present study, Co compounds were all decomposed below the sintering temperature and remained in the iron silicide. The Co sulfide, phosphide, bromide and iodide were particularly high in reactivity with the iron silicide. The Co, of which the added quantity was proportional to the electric conductivity, was almost homogenized into a solid solution. In the experiment, both Co sulfide and phosphide were equal in thermoelectric power as an additive. The Co bromide and iodide were maximally about 10% and 50%, respectively lower in thermoelectric power than the Co sulfide. It is attributable to the FeSi2 reformed to the electrically insulating SiO2 and low-thermoelectric power FeSi, because both Co bromide and iodide are oxidizing compounds. 7 refs., 10 figs.

  16. Compact all-fiber optical Faraday components using 65-wt%-terbium-doped fiber with a record Verdet constant of -32 rad/(Tm). (United States)

    Sun, L; Jiang, S; Marciante, J R


    A compact all-fiber Faraday isolator and a Faraday mirror are demonstrated. At the core of each of these components is an all-fiber Faraday rotator made of a 4-cm-long, 65-wt%-terbium-doped silicate fiber. The effective Verdet constant of the terbium-doped fiber is measured to be -32 rad/(Tm), which is 27 x larger than that of silica fiber. This effective Verdet constant is the largest value measured to date in any fiber and is 83% of the Verdet constant of commercially available crystal used in bulk optics-based isolators. Combining the all-fiber Faraday rotator with fiber polarizers results in a fully fusion spliced all-fiber isolator whose isolation is measured to be 19 dB. Combining the all-fiber Faraday rotator with a fiber Bragg grating results in an all-fiber Faraday mirror that rotates the polarization state of the reflected light by 88 +/- 4 degrees .

  17. Picomolar Traces of Americium(III) Introduce Drastic Changes in the Structural Chemistry of Terbium(III): A Break in the "Gadolinium Break". (United States)

    Welch, Jan M; Müller, Danny; Knoll, Christian; Wilkovitsch, Martin; Giester, Gerald; Ofner, Johannes; Lendl, Bernhard; Weinberger, Peter; Steinhauser, Georg


    The crystallization of terbium 5,5'-azobis[1H-tetrazol-1-ide] (ZT) in the presence of trace amounts (ca. 50 Bq, ca. 1.6 pmol) of americium results in 1) the accumulation of the americium tracer in the crystalline solid and 2) a material that adopts a different crystal structure to that formed in the absence of americium. Americium-doped [Tb(Am)(H 2 O) 7 ZT] 2 ZT⋅10 H 2 O is isostructural to light lanthanide (Ce-Gd) 5,5'-azobis[1H-tetrazol-1-ide] compounds, rather than to the heavy lanthanide (Tb-Lu) 5,5'-azobis[1H-tetrazol-1-ide] (e.g., [Tb(H 2 O) 8 ] 2 ZT 3 ⋅6 H 2 O) derivatives. Traces of Am seem to force the Tb compound into a structure normally preferred by the lighter lanthanides, despite a 10 8 -fold Tb excess. The americium-doped material was studied by single-crystal X-ray diffraction, vibrational spectroscopy, radiochemical neutron activation analysis, and scanning electron microcopy. In addition, the inclusion properties of terbium 5,5'-azobis[1H-tetrazol-1-ide] towards americium were quantified, and a model for the crystallization process is proposed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Characterization of complex carbide–silicide precipitates in a Ni–Cr–Mo–Fe–Si alloy modified by welding

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharyya, D., E-mail:; Davis, J.; Drew, M.; Harrison, R.P.; Edwards, L.


    Nickel based alloys of the type Hastelloy-N™ are ideal candidate materials for molten salt reactors, as well as for applications such as pressure vessels, due to their excellent resistance to creep, oxidation and corrosion. In this work, the authors have attempted to understand the effects of welding on the morphology, chemistry and crystal structure of the precipitates in the heat affected zone (HAZ) and the weld zone of a Ni–Cr–Mo–Fe–Si alloy similar to Hastelloy-N™ in composition, by using characterization techniques such as scanning and transmission electron microscopy. Two plates of a Ni–Cr–Mo–Fe–Si alloy GH-3535 were welded together using a TiG welding process without filler material to achieve a joint with a curved molten zone with dendritic structure. It is evident that the primary precipitates have melted in the HAZ and re-solidified in a eutectic-like morphology, with a chemistry and crystal structure only slightly different from the pre-existing precipitates, while the surrounding matrix grains remained unmelted, except for the zones immediately adjacent to the precipitates. In the molten zone, the primary precipitates were fully melted and dissolved in the matrix, and there was enrichment of Mo and Si in the dendrite boundaries after solidification, and re-precipitation of the complex carbides/silicides at some grain boundaries and triple points. The nature of the precipitates in the molten zone varied according to the local chemical composition. - Graphical abstract: Display Omitted - Highlights: • Ni-based alloy with Cr, Mo, Si, Fe and C was welded, examined with SEM, EBSD, and TEM. • Original Ni{sub 2}(Mo,Cr){sub 4}(Si,C) carbides changed from equiaxed to lamellar shape in HAZ. • Composition and crystal structure remained almost unchanged in HAZ. • Original carbides changed to lamellar Ni{sub 3}(Mo,Cr){sub 3}(Si,C) in some cases in weld metal. • Precipitates were mostly incoherent, but semi-coherent in some cases in weld

  19. Crystal structures of two mononuclear complexes of terbium(III) nitrate with the tripodal alcohol 1,1,1-tris-(hy-droxy-meth-yl)propane. (United States)

    Gregório, Thaiane; Giese, Siddhartha O K; Nunes, Giovana G; Soares, Jaísa F; Hughes, David L


    Two new mononuclear cationic complexes in which the TbIII ion is bis-chelated by the tripodal alcohol 1,1,1-tris-(hy-droxy-meth-yl)propane (H3LEt, C6H14O3) were prepared from Tb(NO3)3·5H2O and had their crystal and mol-ecular structures solved by single-crystal X-ray diffraction analysis after data collection at 100 K. Both products were isolated in reasonable yields from the same reaction mixture by using different crystallization conditions. The higher-symmetry complex dinitratobis[1,1,1-tris-(hy-droxy-meth-yl)propane]-terbium(III) nitrate di-meth-oxy-ethane hemisolvate, [Tb(NO3)2(H3LEt)2]NO3·0.5C4H10O2, 1, in which the lanthanide ion is 10-coordinate and adopts an s-bicapped square-anti-prismatic coordination geometry, contains two bidentate nitrate ions bound to the metal atom; another nitrate ion functions as a counter-ion and a half-mol-ecule of di-meth-oxy-ethane (completed by a crystallographic twofold rotation axis) is also present. In product aqua-nitratobis[1,1,1-tris-(hy-droxy-meth-yl)propane]-terbium(III) dinitrate, [Tb(NO3)(H3LEt)2(H2O)](NO3)2, 2, one bidentate nitrate ion and one water mol-ecule are bound to the nine-coordinate terbium(III) centre, while two free nitrate ions contribute to charge balance outside the tricapped trigonal-prismatic coordination polyhedron. No free water mol-ecule was found in either of the crystal structures and, only in the case of 1, di-meth-oxy-ethane acts as a crystallizing solvent. In both mol-ecular structures, the two tripodal ligands are bent to one side of the coordination sphere, leaving room for the anionic and water ligands. In complex 2, the methyl group of one of the H3LEt ligands is disordered over two alternative orientations. Strong hydrogen bonds, both intra- and inter-molecular, are found in the crystal structures due to the number of different donor and acceptor groups present.

  20. Safety evaluation report related to the evaluation of low-enriched uranium silicide-aluminum dispersion fuel for use in non-power reactors

    Energy Technology Data Exchange (ETDEWEB)


    Low-enriched uranium silicide-aluminum dispersion plate-type fuels have been extensively researched and developed under the international program, Reduced Enrichment in Research and Test Reactors. The international effort was led by Argonne National Laboratory (ANL) in the United States. This evaluation is based primarily on reports issued by ANL that discuss and summarize the developmental tests and experiments, including postirradiation examinations, of both miniature and full-sized plates of prototypical fuel compositions. This evaluation concludes that plate-type fuels suitable and acceptable for use in research and test reactors can be fabricated with U/sub 3/Si/sub 2/-Al dispersion compacts with uranium densities up to 4.8 g/cm/sup 3/. 4 refs., 1 fig.

  1. Silicides for VLSI applications

    CERN Document Server

    Murarka, Shyam P


    Most of the subject matter of this book has previously been available only in the form of research papers and review articles. I have not attempted to refer to all the published papers. The reader may find it advantageous to refer to the references listed.

  2. The response behavior of PPy-DB18C6 electrode to terbium(III in acetonitrile and its thermodynamic application

    Directory of Open Access Journals (Sweden)

    Mohammad Hossein Arbab Zavar


    Full Text Available Polypyrrole modified electrode prepared by electropolymerization of pyrrole in the presence of a complexing ligand, dibenzo-18-crown-6(DB18C6, was prepared and investigated as a Tb3+-selective electrode in acetonitrile. The potentiometric response of the electrode was linear within the Tb3+ concentration range 1 × 10−5–1 × 10−2 M with a Nernstian slope of 20.9 mVdecade−1 in AN. The electrode was applied to study the complexation of the terbium(III ion in acetonitrile with such other basic aprotic solvent molecules (D as dimethyl sulfoxide, N,N-dimethyl formamide, propylene carbonate and pyridine. The successive complex formation constant (βi and Gibbs energies of transfer (ΔGtr of Tb3+ in AN in relation to such D were obtained.

  3. Luminescence and Magnetic Properties of Two Three-Dimensional Terbium and Dysprosium MOFs Based on Azobenzene-4,4′-Dicarboxylic Linker

    Directory of Open Access Journals (Sweden)

    Belén Fernández


    Full Text Available We report the in situ formation of two novel metal-organic frameworks based on terbium and dysprosium ions using azobenzene-4,4′-dicarboxylic acid (H2abd as ligand, synthesized by soft hydrothermal routes. Both materials show isostructural three-dimensional networks with channels along a axis and display intense photoluminescence properties in the solid state at room temperature. Textural properties of the metal-organic frameworks (MOFs have been fully characterized although no appreciable porosity was obtained. Magnetic properties of these materials were studied, highlighting the dysprosium material displays slightly frequency-dependent out of phase signals when measured under zero external field and under an applied field of 1000 Oe.

  4. Luminescent europium and terbium complexes of dipyridoquinoxaline and dipyridophenazine ligands as photosensitizing antennae: structures and biological perspectives. (United States)

    Dasari, Srikanth; Patra, Ashis K


    The europium(III) and terbium(III) complexes, namely [Eu(dpq)(DMF)2(NO3)3] (1), [Eu(dppz)2(NO3)3] (2), [Tb(dpq)(DMF)2Cl3] (3), and [Tb(dppz)(DMF)2Cl3] (4), where dipyrido[3,2-d:2',3'-f]quinoxaline (dpq in 1 and 3), dipyrido[3,2-a:2',3'-c]phenazine (dppz in 2 and 4) and N,N'-dimethylformamide (DMF) have been isolated, characterized from their physicochemical data, luminescence studies and their interaction with DNA, serum albumin protein and photo-induced DNA cleavage activity are studied. The X-ray crystal structures of complexes 1-4 show discrete mononuclear Ln(3+)-based structures. The Eu(3+) in [Eu(dpq)(DMF)2(NO3)3] (1) and [Eu(dppz)2(NO3)3] (2) as [Eu(dppz)2(NO3)3]·dppz (2a) adopts a ten-coordinated bicapped dodecahedron structure with a bidentate N,N-donor dpq ligand, two DMF and three NO3(-) anions in 1 and two bidentate N,N-donor dppz ligands and three NO3(-) anions in 2. Complexes 3 and 4 show a seven-coordinated mono-capped octahedron structure where Tb(3+) contains bidentate dpq/dppz ligands, two DMF and three Cl(-) anions. The complexes are highly luminescent in nature indicating efficient photo-excited energy transfer from the dpq/dppz antenna to Ln(3+) to generate long-lived emissive excited states for characteristic f → f transitions. The time-resolved luminescence spectra of complexes 1-4 show typical narrow emission bands attributed to the (5)D0 → (7)F(J) and (5)D4 → (7)F(J) f-f transitions of Eu(3+) and Tb(3+) ions respectively. The number of inner-sphere water molecules (q) was determined from luminescence lifetime measurements in H2O and D2O confirming ligand-exchange reactions with water in solution. The complexes display significant binding propensity to the CT-DNA giving binding constant values in the range of 1.0 × 10(4)-6.1 × 10(4) M(-1) in the order 2, 4 (dppz) > 1, 3 (dpq). DNA binding data suggest DNA groove binding with the partial intercalation nature of the complexes. All the complexes also show binding propensity (K(BSA)

  5. Spin Waves in Terbium

    DEFF Research Database (Denmark)

    Jensen, J.; Houmann, Jens Christian Gylden


    The selection rules for the linear couplings between magnons and phonons propagating in the c direction of a simple basal-plane hcp ferromagnet are determined by general symmetry considerations. The acoustic-optical magnon-phonon interactions observed in the heavy-rare-earth metals have been expl...... by Liu. The coupled magnon—transverse-phonon system for the c direction of Tb is analyzed in detail, and the strengths of the couplings are deduced as a function of wave vector by combining the experimental studies with the theory....

  6. Spin Waves in Terbium

    DEFF Research Database (Denmark)

    Jensen, J.; Houmann, Jens Christian Gylden; Bjerrum Møller, Hans


    The energies of spin waves propagating in the c direction of Tb have been studied by inelastic neutron scattering, as a function of a magnetic field applied along the easy and hard directions in the basal plane, and as a function of temperature. From a general spin Hamiltonian, consistent...... with the symmetry, we deduce the dispersion relation for the spin waves in a basal-plane ferromagnet. This phenomenological spin-wave theory accounts for the observed behavior of the magnon energies in Tb. The two q⃗-dependent Bogoliubov components of the magnon energies are derived from the experimental results...

  7. Synthesis and crystal structure of terbium(III) meta-oxoborate Tb(BO{sub 2}){sub 3} ({identical_to} TbB{sub 3}O{sub 6}); Synthese und Kristallstruktur von Terbium(III)-meta-Oxoborat Tb(BO{sub 2}){sub 3} ({identical_to} TbB{sub 3}O{sub 6})

    Energy Technology Data Exchange (ETDEWEB)

    Nikelski, Tanja; Schleid, Thomas [Institut fuer Anorganische Chemie der Universitaet Stuttgart (Germany)


    The terbium meta-oxoborate Tb(BO{sub 2}){sub 3} ({identical_to} TbB{sub 3}O{sub 6}) is obtained as single crystals by the reaction of terbium, Tb{sub 4}O{sub 7} and TbCl{sub 3} with an excess of B{sub 2}O{sub 3} in gastight sealed platinum ampoules at 950 C after three weeks. The compound appears to be air- and water-resistant and crystallizes as long, thin, colourless needles which tend to growth-twinning due to their marked fibrous habit. The crystal structure of Tb(BO{sub 2}){sub 3} (orthorhombic, Pnma; a = 1598.97(9), b = 741.39(4), c = 1229.58(7) pm; Z = 16) contains strongly corrugated oxoborate layers {sub {infinity}}{sup 2}{l_brace}(BO{sub 2}){sup -}{r_brace} built of vertex-linked [BO{sub 4}]{sup 5-} tetrahedra (d(B-O) = 143 - 154 pm, and angsph;(O-B-O) = 102-115 ) which spread out parallel (100). The four crystallographically different Tb{sup 3+} cations all exhibit coordination numbers of eight towards the oxygen atoms (d(Tb-O) = 228-287 pm). The corresponding metal cation polyhedra [TbO{sub 8}]{sup 13+} too convene to layers (composition: {sub {infinity}}{sup 2}{l_brace}(Tb{sub 2}O{sub 11}){sup 16-}{r_brace}) which are likewise oriented parallel to the (100) plane. (Abstract Copyright [2003], Wiley Periodicals, Inc.) [German] Das Terbium-meta-Oxoborat Tb(BO{sub 2}){sub 3} ({identical_to} TbB{sub 3}O{sub 6}) entsteht einkristallin bei der Reaktion von Terbium, Tb{sub 4}O{sub 7} und TbCl{sub 3} mit einem Ueberschuss von B{sub 2}O{sub 3} in gasdicht verschlossenen Platinampullen nach drei Wochen bei 950 C. Die Verbindung ist luft- und wasserstabil und faellt in langen, duennen, farblosen Nadeln an, die aufgrund ihres ausgepraegt faserigen Habitus zur Wachstumsverzwillingung neigen. Die Kristallstruktur von Tb(BO{sub 2}){sub 3} (orthorhombisch, Pnma; a = 1598, 97(9), b = 741, 39(4), c = 1229, 58(7) pm; Z = 16) enthaelt parallel (100) verlaufende, stark gewellte Oxoborat-Schichten {sub {infinity}}{sup 2}{l_brace}(BO{sub 2}){sup -}{r_brace} aus

  8. Synthesis, Characterization, and Mechanism of Formation of Janus-Like Nanoparticles of Tantalum Silicide-Silicon (TaSi2/Si

    Directory of Open Access Journals (Sweden)

    Andrey V. Nomoev


    Full Text Available Metal-semiconductor Janus-like nanoparticles with the composition tantalum silicide-silicon (TaSi2/Si were synthesized for the first time by means of an evaporation method utilizing a high-power electron beam. The composition of the synthesized particles were characterized using high-resolution transmission electron microscopy (HRTEM, X-ray diffraction (XRD, selective area electron diffraction (SAED, and energy dispersive X-ray fluorescence (EDX analysis. The system is compared to previously synthesized core-shell type particles in order to show possible differences responsible for the Janus-like structure forming instead of a core-shell architecture. It is proposed that the production of Janus-like as opposed to core-shell or monophase particles occurs due to the ability of Ta and Si to form compounds and the relative content of Ta and Si atoms in the produced vapour. Based on the results, a potential mechanism of formation for the TaSi2/Si nanoparticles is discussed.

  9. Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal-Oxide-Silicon Field Effect Transistors (United States)

    Tanaka, Hiroaki; Isogai, Tatsunori; Goto, Tetsuya; Teramoto, Akinobu; Sugawa, Shigetoshi; Ohmi, Tadahiro


    A current drivability improvement of p-channel metal-oxide-silicon field effect transistors (MOSFETs) is necessary for the performance enhancement of complementary metal-oxide-semiconductor (CMOS) circuits. In this paper, we present the key technology for fabricating indispensable CMOS circuits with a small Schottky barrier height and a low contact resistance for p-type silicon using Pd2Si. We fabricated a Pd2Si gate Schottky barrier diode and a Kelvin pattern on silicon. The measured Schottky barrier height is 0.29 eV for p-type silicon. We also realized a very low contact resistivity of 3.7 ×10-9 Ω cm2 for the p+ region of silicon. The p-channel MOSFET with Pd2Si source/drain contacts realized a good characteristic, that is, a small off current. The technology developed in this work involves silicide formation for source/drain contacts of p-channel MOSFETs, which is expected to realize the performance enhancement of MOSFETs.

  10. An integrated logic system for time-resolved fluorescent "turn-on" detection of cysteine and histidine base on terbium (III) coordination polymer-copper (II) ensemble. (United States)

    Xue, Shi-Fan; Lu, Ling-Fei; Wang, Qi-Xian; Zhang, Shengqiang; Zhang, Min; Shi, Guoyue


    Cysteine (Cys) and histidine (His) both play indispensable roles in many important biological activities. An enhanced Cys level can result in Alzheimer's and cardiovascular diseases. Likewise, His plays a significant role in the growth and repair of tissues as well as in controlling the transmission of metal elements in biological bases. Therefore, it is meaningful to detect Cys and His simultaneously. In this work, a novel terbium (III) coordination polymer-Cu (II) ensemble (Tb(3+)/GMP-Cu(2+)) was proposed. Guanosine monophosphate (GMP) can self-assemble with Tb(3+) to form a supramolecular Tb(3+) coordination polymer (Tb(3+)/GMP), which can be suited as a time-resolved probe. The fluorescence of Tb(3+)/GMP would be quenched upon the addition of Cu(2+), and then the fluorescence of the as-prepared Tb(3+)/GMP-Cu(2+) ensemble would be restored again in the presence of Cys or His. By incorporating N-Ethylmaleimide and Ni(2+) as masking agents, Tb(3+)/GMP-Cu(2+) was further exploited as an integrated logic system and a specific time-resolved fluorescent "turn-on" assay for simultaneously sensing His and Cys was designed. Meanwhile it can also be used in plasma samples, showing great potential to meet the need of practical application. Copyright © 2016 Elsevier B.V. All rights reserved.

  11. Synthesis and photoluminescence properties of cerium-doped terbium-yttrium aluminum garnet phosphor for white light-emitting diodes applications (United States)

    Wang, Jun; Han, Tao; Lang, Tianchun; Tu, Mingjing; Peng, Lingling


    Cerium-doped terbium-yttrium aluminum garnet phosphors were synthesized using the solid-state reaction method. The crystalline phase, morphology, and photoluminescence properties were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), and fluorescence spectrophotometer, respectively. The XRD results indicate that with an increase of the amount of x (Tb3+), all of the samples have a pure garnet crystal structure without secondary phases. The SEM images reveal that the samples are composed of sphere-like crystallites, which exhibit different degrees of agglomeration. The luminescent properties of Ce ions in )Al5O12∶Ce0.1 have been studied, and it was found that the emission band shifted toward a longer wavelength. The redshift is attributed to the lowering of the 5d energy level centroid of Ce, which can be explained by the nephelauxetic effect and compression effect. These phosphors were coated on blue light-emitting diode (LED) chips to fabricate white light-emitting diodes (WLEDs), and their color-rendering indices, color temperatures, and luminous efficiencies were measured. As a consequence of the addition of Tb, the blue LED pumped )Al5O12∶Ce0.1 phosphors WLEDs showed good optical properties.

  12. Study on the fluorescent enhancement effect in terbium-gadolinium-protein-sodium dodecyl benzene sulfonate system and its application on sensitive detection of protein at nanogram level. (United States)

    Sun, Changxia; Yang, Jinghe; Wu, Xia; Liu, Shufang; Su, Benyu


    The co-luminescence effect in a terbium-gadolinium-protein-sodium dodecyl benzene sulfonate (SDBS) system is reported here. Based on it, the sensitive quantitative analysis of protein at nanogram levels is established. The co-luminescence mechanism is studied using fluorescence, resonance light scattering (RLS), absorption spectroscopy and NMR measurement. It is considered that protein could be unfolded by SDBS, then a efficacious intramolecular fluorescent energy transfer occurs from unfolded protein to rare earth ions through SDBS acting as a "transfer bridge" to enhance the emission fluorescence of Tb3+ in this ternary complex of Tb-SDBS-BSA, where energy transfer from protein to SDBS by aromatic ring stacking is the most important step. Cooperating with the intramolecular energy transfer above is the intermolecular energy transfer between the simultaneous existing complexes of both Tb3+ and Gd3+. The fluorescence quantum yield is increased by an energy-insulating sheath, which is considered to be another reason for the resulting enhancement of the fluorescence. Förster theory is used to calculate the distribution of enhancing factors and has led to a greater understanding of the mechanisms of energy transfer.

  13. [Studies on luminescence properties of seven ternary complexes of terbium with 1,10-phenanthroline and benzoic acid and its derivatives]. (United States)

    Gao, Zhi-hua; Wang, Shu-ping; Liu, Cui-ge; Ma, Rui-xia; Wang, Rui-fen


    Seven ternary complexes of Tb(III) were synthesized with benzoic acid (BA), o-, m-, p-methylbenzoic acid (o-MBA, m-MBA, p-MBA), and o-, m-, p-methoxybenzoic acid (o-MOBA, m-MOBA, p-MOBA) as the first ligand, and 1,10-phenanthroline (phen) as the second ligand. The content of C, H and N were measured by using a Flash-EA model 1112 elemental analyzer. Excitation and luminescence spectra of the title solid complexes were recorded by using a Hitachi F-4500 fluorescence spectrophotometer at room temperature. The effects of different varieties and different positions of replacing benzoic acid as the first ligand on fluorescence properties of the ternary complexes of terbium were discussed. The results indicated that the intensity of 5D4-->7F6 (489 nm) and 5D4-->7F5 (545 nm) of substituting benzoic acid complexes was stronger than benzoic acid. Three ternary complexes of Tb(III) with o-, m-, p-methylbenzoic acid showed emission intensity in the consecution: Tb(o-MBA)3 phenMOBA)3phen x H2O>Tb(m-MOBA)3phen x H2O>Tb(p-MOBA)3 phen.

  14. M5Si3(M=Ti, Nb, Mo) Based Transition-Metal Silicides for High Temperature Applications

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zhihong [Iowa State Univ., Ames, IA (United States)


    Transition metal silicides are being considered for future engine turbine components at temperatures up to 1600 C. Although significant improvement in high temperature strength, room temperature fracture toughness has been realized in the past decade, further improvement in oxidation resistance is needed. Oxidation mechanism of Ti5Si3-based alloys was investigated. Oxidation behavior of Ti5Si3-based alloy strongly depends on the atmosphere. Presence of Nitrogen alters the oxidation behavior of Ti5Si3 by nucleation and growth of nitride subscale. Ti5Si3.2and Ti5Si3C0.5 alloys exhibited an excellent oxidation resistance in nitrogen bearing atmosphere due to limited dissolution of nitrogen and increased Si/Ti activity ratio. MoSi2 coating developed by pack cementation to protect Mo-based Mo-Si-B composites was found to be effective up to 1500 C. Shifting coating composition to T1+T2+Mo3Si region showed the possibility to extend the coating lifetime above 1500 C by more than ten times via formation of slow growing Mo3Si or T2 interlayer without sacrificing the oxidation resistance of the coating. The phase equilibria in the Nb-rich portion of Nb-B system has been evaluated experimentally using metallographic analysis and differential thermal analyzer (DTA). It was shown that Nbss (solid solution) and NbB are the only two primary phases in the 0-40 at.% B composition range, and the eutectic reaction L {leftrightarrow} NbSS + NbB was determined to occur at 2104 ± 5 C by DTA.

  15. Self-diffusion coefficients of the trivalent f-element ion series in dilute and moderately dilute aqueous solutions: A comparative study between europium, gadolinium, terbium and berkelium (United States)

    Rafik, Besbes; Noureddine, Ouerfelli; Abderabbou, Abdelmanef; Habib, Latrous


    We have continued the studies on the trivalent ions of the 4f and 5f elements. In this paper, we compare the transport properties (self-diffusion coefficient) of the trivalent aquo ions over two ranges of concentrations (0 — 2×10-3M) and (2×10-3 — 1.5M). Self-diffusion coefficients, D, of the trivalent f-element aquo ion series have been determined in aqueous background electrolytes of Gd(NO3)3 and Nd(ClO4)3, at pH=2.5 (HNO3, HClO4) and at 25°C using the open-end capillary method (O.E.C.M.). This method measures the transportation time of ions across a fixed distance. In this paper, we complete a measurement of self-diffusion coefficient for terbium. We optimized the pH to avoid hydrolysis, ion-pairing and complexation of the trivalent 4f and 5f ions. The variation of D versus √C is not linear for dilute solutions (0 — 2×10-3M) and quasi-linear in moderate concentrations (C<=1.5 M). Similar behavior was observed for Tb, as compared with those for Bk, Eu and Gd. We complete the comparison variation of D/D° versus √C for all studied 4f and 5f elements from concentration 0 to 1.5M and we obtained the same variation with √C for all studied elements. All 4f and 5f elements studied follow the Nernst-Hartley expression.

  16. Terbium-based time-gated Förster resonance energy transfer imaging for evaluating protein-protein interactions on cell membranes. (United States)

    Lindén, Stina; Singh, Manish Kumar; Wegner, K David; Regairaz, Marie; Dautry, François; Treussart, François; Hildebrandt, Niko


    Fluorescence imaging of cells and subcellular compartments is an essential tool to investigate biological processes and to evaluate the development and progression of diseases. In particular, protein-protein interactions can be monitored by Förster resonance energy transfer (FRET) between two proximal fluorophores that are attached to specific recognition biomolecules such as antibodies. We investigated the membrane expression of E- and N-cadherins in three different cell lines used as model systems to study epithelial to mesenchymal transition (EMT) and a possible detection of circulating tumour cells (CTCs). EMT is a key process in cancer metastasis, during which epithelial markers (such as E-cadherin) are down-regulated in the primary tumour whereas mesenchymal markers (such as N-cadherin) are up-regulated, leading to enhanced cell motility, intravasation, and appearance of CTCs. Various FRET donor-acceptor pairs and protein recognition strategies were utilized, in which Lumi4-Tb terbium complexes (Tb) and different organic dyes were conjugated to several distinct E- and N-cadherin-specific antibodies. Pulsed excitation of Tb at low repetition rates (100 Hz) and time-gated (TG) imaging of both the Tb-donor and the dye-acceptor photoluminescence (PL) allowed efficient detection of the EMT markers as well as FRET in the case of sufficient donor-acceptor proximity. Efficient FRET was observed only between two E-cadherin-specific antibodies and further experiments indicated that these antibodies recognized the same E-cadherin molecule, suggesting a limited accessibility of cadherins when they are clustered at adherens junctions. The investigated Tb-to-dye FRET systems provided reduced photobleaching compared to the AlexaFluor 488-568 donor-acceptor pair. Our results demonstrate the applicability and advantages of Tb-based TG FRET for efficient and stable imaging of antibody-antibody interactions on different cell lines. They also reveal the limitations of

  17. A broad G protein-coupled receptor internalization assay that combines SNAP-tag labeling, diffusion-enhanced resonance energy transfer, and a highly emissive terbium cryptate acceptor

    Directory of Open Access Journals (Sweden)

    Angélique eLEVOYE


    Full Text Available Although G protein-coupled receptor (GPCR internalization has long been considered a major aspect of the desensitization process that tunes ligand responsiveness, internalization is also involved in receptor resensitization and signaling, as well as the ligand scavenging function of some atypical receptors. Internalization thus contributes to the diversity of GPCR-dependent signaling, and its dynamics and quantification in living cells has generated considerable interest. We developed a robust and sensitive assay to follow and quantify ligand-induced and constitutive GPCR internalization but also receptor recycling in living cells. This assay is based on diffusion-enhanced resonance energy transfer (DERET between cell surface GPCRs labeled with a luminescent terbium cryptate donor and a fluorescein acceptor present in the culture medium. GPCR internalization results in a quantifiable reduction of energy transfer. This method yields a high signal-to-noise ratio due to time-resolved measurements. For various GPCRs belonging to different classes, we demonstrated that constitutive and ligand-induced internalization could be monitored as a function of time and ligand concentration, thus allowing accurate quantitative determination of kinetics of receptor internalization but also half-maximal effective or inhibitory concentrations of compounds. In addition to its selectivity and sensitivity, we provided evidence that DERET-based internalization assay is particularly suitable for characterizing biased ligands. Furthermore, the determination of a Z’-factor value of 0.45 indicates the quality and suitability of DERET-based internalization assay for high-throughput screening (HTS of compounds that may modulate GPCRs internalization.

  18. Accelerations of {epsilon}+{alpha}{yields}{beta} transformation and sintering of iron silicide by addition of Pd; Pd tenka ni yoru keikatetsu no {epsilon}+{alpha}{yields}{beta} hentai to shoketsu no sokushin

    Energy Technology Data Exchange (ETDEWEB)

    Kato, M.; Yamamoto, N.; Takeda, T. [Isuzu Advanced Engineering Center Ltd., Kanagawa (Japan); Hayashi, K. [The University of Tokyo, Tokyo (Japan). Institute of Industrial Science


    FeSi2 ({beta} phase) semiconducting iron silicide, which is expected to be widely used as a thermoelectric material in high temperature environment, is formed below 1259K by the peritectoid reaction of FeSi ({epsilon}) and Fe2Si5 ({alpha}) two metallic phases. Because the transformation of {epsilon} + {alpha} {yields} {beta} caused by this peritectoid reaction occurs considerably slowly, the iron silicide material which is produced by sintering of the powder at temperatures above 1259K has to be isothermally heat-treated for at least 180ks at about 1120K after the sintering so that the transformation occurs completely. We have found that the transformation was drastically accelerated by the addition of a small amount of Pd in the same way as Cu; the isothermal heat-treatment time necessary for the completion of the transformation was reduced to about 1/60. The sintering time needed for the almost full densification of the powder by pressure DCL sintering (DCL; direct current loading) was also reduced. A hypothesis for the mechanisms was proposed. 15 refs., 7 figs., 2 tabs.

  19. Crystal structure of an eight-coordinate terbium(III ion chelated by N,N′-bis(2-hydroxybenzyl-N,N′-bis(pyridin-2-ylmethylethylenediamine (bbpen2− and nitrate

    Directory of Open Access Journals (Sweden)

    Thaiane Gregório


    Full Text Available The reaction of terbium(III nitrate pentahydrate in acetonitrile with N,N′-bis(2-hydroxybenzyl-N,N′-bis(pyridin-2-ylmethylethylenediamine (H2bbpen, previously deprotonated with triethylamine, produced the mononuclear compound [N,N′-bis(2-oxidobenzyl-κO-N,N′-bis(pyridin-2-ylmethyl-κNethylenediamine-κ2N,N′](nitrato-κ2O,O′terbium(III, [Tb(C28H28N4O2(NO3]. The molecule lies on a twofold rotation axis and the TbIII ion is eight-coordinate with a slightly distorted dodecahedral coordination geometry. In the symmetry-unique part of the molecule, the pyridine and benzene rings are both essentially planar and form a dihedral angle of 61.42 (7°. In the molecular structure, the N4O4 coordination environment is defined by the hexadentate bbpen ligand and the bidentate nitrate anion. In the crystal, a weak C—H...O hydrogen bond links molecules into a two-dimensional network parallel to (001.

  20. Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires; Aufbau einer Vierspitzen-Rastertunnelmikroskop/Rasterelektronenmikroskop-Kombination und Leitfaehigkeitsmessungen an Silizid Nanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, Evgeniy


    In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

  1. Studies of valence of selected rare earth silicides determined using Si K and Pd/Rh L{sub 2,3} XANES and LAPW numerical studies

    Energy Technology Data Exchange (ETDEWEB)

    Zajdel, P., E-mail: [Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice (Poland); Kisiel, A., E-mail: [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Szytuła, A., E-mail: [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Goraus, J., E-mail: [Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice (Poland); Balerna, A., E-mail: [Laboratori Nazionali di Frascati, INFN, Lab DAPHINE-Light, Via E. Fermi 40, I-00044 Frascati (Italy); Banaś, A., E-mail: [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Starowicz, P., E-mail: [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Konior, J., E-mail: [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Cinque, G., E-mail: [Diamond Light Source, Harwell Campus, OX11 0DE Chilton-Didcot (United Kingdom); Grilli, A., E-mail: [Laboratori Nazionali di Frascati, INFN, Lab DAPHINE-Light, Via E. Fermi 40, I-00044 Frascati (Italy)


    Highlights: • The Si K and Pd L{sub 3} edges of R{sub 2}PdSi{sub 3} (R = Ce, Nd, Tb, Dy, Ho, Er) and HoRh{sub 2−x}Pd{sub x}Si{sub 2} are reported. • The R–Si bonds possess polar and 4d5s bands of Pd and Rh metallic characters. • There is no indication of Ce having a different valence than the other rare earths. • The positions and features of the calculated edges exhibit a fair agreement up to ≈10 eV. • The supercell used for Ho{sub 2}PdSi{sub 3} is good enough to reproduce the Si K edge. - Abstract: We report on the investigation of Si and Pd/Rh chemical environments using X-ray Absorption Near Edge Spectroscopy in two different families of rare earth silicides R{sub 2}PdSi{sub 3} (R = Ce, Nd, Tb, Dy, Ho, Er) and HoRh{sub 2−x}Pd{sub x}Si{sub 2} (x = 0, 0.5, 0.75, 1.0, 1.5, 1.8, 2.0). The Si K, Pd L{sub 3} and Rh L{sub 3} absorption edges were recorded in order to follow their changes upon the variation of 4f and 4d5s electron numbers. In both cases it was found that the Si K edge was shifted ≈0.5 eV toward lower energies, relative to pure silicon. In the first family, the shift decreases with increasing number of f-electrons, while the Si K edge remains constant upon rhodium–palladium substitution. In all cases the Pd L{sub 3} edge was shifted to higher energies relative to metallic Pd. No visible change in the Pd L{sub 3} position was observed either with a varying 4f electron count or upon Pd/Rh substitution. Also, the Rh L{sub 3} edge did not change. For two selected members, Ho{sub 2}PdSi{sub 3} and HoPd{sub 2}Si{sub 2}, the Wien2K’09 (LDA + U) package was used to calculate the electronic structure and the absorption edges. Si K edges were reproduced well for both compounds, while Pd L{sub 3} only exhibited a fair agreement for the second compound. This discrepancy between the Pd L{sub 3} theory and experiment for the Ho{sub 2}PdSi{sub 3} sample can be attributed to the specific ordered superstructure used in the numerical calculations

  2. Selective Sensing of Fe(3+) and Al(3+) Ions and Detection of 2,4,6-Trinitrophenol by a Water-Stable Terbium-Based Metal-Organic Framework. (United States)

    Cao, Li-Hui; Shi, Fang; Zhang, Wen-Min; Zang, Shuang-Quan; Mak, Thomas C W


    A water-stable luminescent terbium-based metal-organic framework (MOF), {[Tb(L1 )1.5 (H2 O)]⋅3 H2 O}n (Tb-MOF), with rod-shaped secondary building units (SBUs) and honeycomb-type tubular channels has been synthesized and structurally characterized by single-crystal X-ray diffraction. The high green emission intensity and the microporous nature of the Tb-MOF indicate that it can potentially be used as a luminescent sensor. In this work, we show that Tb-MOF can selectively sense Fe(3+) and Al(3+) ions from mixed metal ions in water through different detection mechanisms. In addition, it also exhibits high sensitivity for 2,4,6-trinitrophenol (TNP) in the presence of other nitro aromatic compounds in aqueous solution by luminescence quenching experiments. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Metal silicides with energetic pulses (United States)

    D'Anna, E.; Leggieri, G.; Luches, A.; Majni, G.; Nava, F.; Ottaviani, G.


    Samples formed of a thin metal film deposited on silicon single crystal were annealed with electron and laser (ruby and excimer) pulses over a wide range of fluences. From a comparison of the experimental results with the temperature profiles of the irradiated samples, it turns out that suicide formation starts when the metal/silicon interface reaches the lowest eutectic temperature of the binary metal/silicon system. The growth rate of reacted layers is of the order of 1 m/s.

  4. Picomolar traces of americium(III) introduce drastic changes in the structural chemistry of terbium(III). A break in the ''gadolinium break''

    Energy Technology Data Exchange (ETDEWEB)

    Welch, Jan M. [TU Wien, Atominstitut, Vienna (Austria); Mueller, Danny; Knoll, Christian; Wilkovitsch, Martin; Weinberger, Peter [TU Wien, Institute of Applied Synthetic Chemistry, Vienna (Austria); Giester, Gerald [University of Vienna, Institute of Mineralogy and Crystallography, Vienna (Austria); Ofner, Johannes; Lendl, Bernhard [TU Wien, Institute of Chemical Technologies and Analytics, Vienna (Austria); Steinhauser, Georg [Leibniz Universitaet Hannover, Institute of Radioecology and Radiation Protection (Germany)


    The crystallization of terbium 5,5{sup '}-azobis[1H-tetrazol-1-ide] (ZT) in the presence of trace amounts (ca. 50 Bq, ca. 1.6 pmol) of americium results in 1) the accumulation of the americium tracer in the crystalline solid and 2) a material that adopts a different crystal structure to that formed in the absence of americium. Americium-doped [Tb(Am)(H{sub 2}O){sub 7}ZT]{sub 2} ZT.10 H{sub 2}O is isostructural to light lanthanide (Ce-Gd) 5,5{sup '}-azobis[1H-tetrazol-1-ide] compounds, rather than to the heavy lanthanide (Tb-Lu) 5,5{sup '}-azobis[1H-tetrazol-1-ide] (e.g., [Tb(H{sub 2}O){sub 8}]{sub 2}ZT{sub 3}.6 H{sub 2}O) derivatives. Traces of Am seem to force the Tb compound into a structure normally preferred by the lighter lanthanides, despite a 10{sup 8}-fold Tb excess. The americium-doped material was studied by single-crystal X-ray diffraction, vibrational spectroscopy, radiochemical neutron activation analysis, and scanning electron microscopy. In addition, the inclusion properties of terbium 5,5{sup '}-azobis[1H-tetrazol-1-ide] towards americium were quantified, and a model for the crystallization process is proposed. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Ternary silicides ScIr{sub 4}Si{sub 2} and RERh{sub 4}Si{sub 2} (RE = Sc, Y, Tb-Lu) and quaternary derivatives RERh{sub 4}Si{sub 2-x}Sn{sub x} (RE = Y, Nd, Sm, Gd-Lu) - structure, chemical bonding, and solid state NMR spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Vosswinkel, Daniel; Benndorf, Christopher; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Eckert, Hellmut [Muenster Univ. (Germany). Inst. fuer Physikalische Chemie; Sao Paulo Univ., Sao Carlos (Brazil). Inst. of Physics; Matar, Samir F. [Bordeaux Univ., CNRS, ICMCB, UPR 9048, Pessac (France)


    The silicides ScIr{sub 4}Si{sub 2} and RERh{sub 4}Si{sub 2} (RE = Sc, Y, Tb-Lu) and silicide stannides RERh{sub 4}Si{sub 2-x}Sn{sub x}(RE = Y, Nd, Sm, Gd-Lu) were synthesized from the elements by arc-melting and subsequent annealing. The new compounds crystallize with the orthorhombic YRh{sub 4}Ge{sub 2} type structure, space group Pnma. They were characterized by X-ray powder patterns and several structures were refined from single crystal X-ray diffractometer data. The main structural motifs of this series of silicides are tricapped trigonal prisms formed by the transition metal and rare earth atoms. One of the two crystallographically independent silicon sites allows for formation of solid solutions with tin, exemplarily studied for ErRh{sub 4}Si{sub 2-x}Sn{sub x}. Electronic structure calculations reveal strong covalent Rh-Si bonding as the main stability factor. Multinuclear ({sup 29}Si, {sup 45}Sc, and {sup 89}Y) magic-angle spinning (MAS) NMR spectra of the structure representatives with diamagnetic rare-earth elements (Sc, Y, Lu) are found to be consistent with the crystallographic data and specifically confirm the selective substitution of Sn in the Si2 sites in the quaternary compounds YRh{sub 4}SiSn and LuRh{sub 4}SiSn.

  6. Sodium terbium(III polyphosphate

    Directory of Open Access Journals (Sweden)

    Abdelghani Oudahmane


    Full Text Available Single crystals of the title compound, NaTb(PO34, were obtained by solid-state reaction. This compound belongs to type II of long-chain polyphosphates with the general formula AIBIII(PO34. It is isotypic with the NaNd(PO34 and NaEr(PO34 homologues. The crystal structure is built up of infinite crenelated chains of corner-sharing PO4 tetrahedra with a repeating unit of four tetrahedra. These chains, extending parallel to [100], are linked by isolated TbO8 square antiprisms, forming a three-dimensional framework. The Na+ ions are located in channels running along [010] and are surrounded by six oxygen atoms in a distorted octahedral environment within a cut-off distance <2.9 Å.

  7. A europium- and terbium-coated magnetic nanocomposite as sorbent in dispersive solid phase extraction coupled with ultra-high performance liquid chromatography for antibiotic determination in meat samples. (United States)

    Castillo-García, M L; Aguilar-Caballos, M P; Gómez-Hens, A


    A new magnetic dispersive solid-phase extraction approach based on Eu- and Tb-coated magnetic nanocomposites, combined with ultra-high performance liquid chromatography with fluorometric detection, is reported for the extraction and simultaneous determination of veterinary antibiotics. The method is aimed at monitoring of potential residues of three tetracyclines, namely oxytetracycline, tetracycline, chlortetracycline and three acidic quinolones, such as oxolinic acid, nalidixic acid and flumequine, chosen as model analytes, in animal muscle samples. The nanocomposites were obtained by synthesizing magnetic nanoparticles by a co-precipitation method and their coating with terbium and europium ions. The limits of detection obtained using standard solutions were: 1.0, 1.5, 3.8, 0.25, 0.7 and 1.2ngmL(-1), which corresponds to 3.3, 5.0, 12.7, 0.8, 2.3 and 4.0μgkg(-1) for oxytetracycline, tetracycline, chlortetracycline, oxolinic acid, nalidixic acid and flumequine, respectively, in meat samples. The precision values, obtained in the presence of the sample matrix, were in the ranges 0.12-2.0% and 2.6-15.4% for retention times and areas, respectively. The selectivity of the method was checked by assaying different veterinary drugs, finding that most of them did not interfere at the same concentration levels as that of analytes. A recovery study was performed in the presence of chicken and pork muscle samples, which provided values in the range of 61.5-102.6%. Copyright © 2015 Elsevier B.V. All rights reserved.

  8. Dual fuel gradients in uranium silicide plates

    Energy Technology Data Exchange (ETDEWEB)

    Pace, B.W. [Babock and Wilcox, Lynchburg, VA (United States)


    Babcock & Wilcox has been able to achieve dual gradient plates with good repeatability in small lots of U{sub 3}Si{sub 2} plates. Improvements in homogeneity and other processing parameters and techniques have allowed the development of contoured fuel within the cladding. The most difficult obstacles to overcome have been the ability to evaluate the bidirectional fuel loadings in comparison to the perfect loading model and the different methods of instilling the gradients in the early compact stage. The overriding conclusion is that to control the contour of the fuel, a known relationship between the compact, the frames and final core gradient must exist. Therefore, further development in the creation and control of dual gradients in fuel plates will involve arriving at a plausible gradient requirement and building the correct model between the compact configuration and the final contoured loading requirements.

  9. Spectroscopic analysis of lithium terbium tetrafluoride

    DEFF Research Database (Denmark)

    Christensen, H.P.


    . The rare-earth site in LiTbF4 possesses S4 symmetry, which allows six crystal-field parameters. ζ and the six Bim were varied to obtain the best agreement with the experimentally observed levels. Keeping F2=434 cm-1 fixed, a fit with a standard deviation of 12 cm-1 was obtained at 10 K with the following...... were calculated by diagonalizing an effective spin-orbit and crystal-field Hamiltonian in an LS basis. H=Σλi(L→·S→)i+ΣαiΣBimOim, where the parameters λi are functions of the spin-orbit parameter ζ and the Slater parameter F2. The Oim and αi are Racah operators and reduced matrix elements, respectively...

  10. Inelastic critical scattering of neutrons from terbium

    DEFF Research Database (Denmark)

    Als-Nielsen, Jens Aage; Dietrich, O.W.; Marshall, W.


    We have measured the inelasticity of the critical neutron scattering in Tb above the Néel temperature. The results show that dynamical slowing down of fluctuations does occur at a second order phase transition.......We have measured the inelasticity of the critical neutron scattering in Tb above the Néel temperature. The results show that dynamical slowing down of fluctuations does occur at a second order phase transition....

  11. Effect of annealing on magnetic properties and silicide formation at ...

    Indian Academy of Sciences (India)

    Abstract. The interaction of Co (30 nm) thin films on Si (100) substrate in UHV using solid state mixing technique has been studied. Cobalt was deposited on silicon substrate using electron beam evaporation at a ... characterized by atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) in terms of the.

  12. Scanning MOKE investigation of ion-beam-synthesized silicide films

    Energy Technology Data Exchange (ETDEWEB)

    Gumarov, G.G., E-mail: [Zavoisky Physical-Technical Institute of THE RAS, 10/7 Sibirsky Trakt, Kazan 420029, Tatarstan (Russian Federation); Kazan Federal University, 18 Kremlyovskaya St., Kazan 420008, Tatarstan (Russian Federation); Konovalov, D.A.; Alekseev, A.V. [Zavoisky Physical-Technical Institute of THE RAS, 10/7 Sibirsky Trakt, Kazan 420029, Tatarstan (Russian Federation); Petukhov, V.Yu. [Zavoisky Physical-Technical Institute of THE RAS, 10/7 Sibirsky Trakt, Kazan 420029, Tatarstan (Russian Federation); Kazan Federal University, 18 Kremlyovskaya St., Kazan 420008, Tatarstan (Russian Federation); Zhikharev, V.A. [Kazan State Technology University, 68 Karl Marx St., Kazan 420015, Tatarstan (Russian Federation); Nuzhdin, V.I.; Shustov, V.A. [Zavoisky Physical-Technical Institute of THE RAS, 10/7 Sibirsky Trakt, Kazan 420029, Tatarstan (Russian Federation)


    Fe ions with an energy of 40 keV were implanted into Si plates with the fluence varying in the range of (1.6-3.0) Multiplication-Sign 10{sup 17} ion/cm{sup 2} in the external magnetic field. Scanning magnetooptical Kerr effect (MOKE) studies have shown that all samples possess uniaxial anisotropy. Both the coercive field and the anisotropy field increase with fluence. It was suggested that induced anisotropy is caused by inverse magnetostriction.

  13. Effects of nitrogen annealing on surface structure, silicide formation ...

    Indian Academy of Sciences (India)

    2002; Froment et al 2003). Also, the ferromagnetic nature of cobalt makes it a suitable candidate for the magnetic record- ing industry. It is well known that in the case of metal sili- cides the post deposition processing plays a ..... to the formation of larger magnetic clusters as can be seen in AFM images. This in turn leads to a ...

  14. Electronic transport properties of tungsten silicide thin films (United States)

    Martin, T. L.; Malhotra, V.; Mahan, J. E.


    Tungsten suicide thin films have been prepared by neutralized ion beam sputtering of the metal onto a polycrystalline silicon layer followed by furnace annealing. The films appear to be essentially sing le-phase disilicide with the possibility of a percent or so carbon and oxygen content. The material behaves as a classical metallic conductor, with a temperature-independent residual resistivity of 16 μΩ-cm and a room temperature intrinsic resistivity of 7 μΩ-cm. Hall effect measurements indicate the material is predominantly a hole conductor, with a room temperature Hall mobility of 30cm2/V-s and an apparent free carrier concentration of 8.9×1021 cm-3. The effective one-carrier mobility derived from geometrical magnetoresistance data, on the other hand, is ≈95 cm2/V-s; this difference, taken together with the effect of temperature on the transport properties, suggests there is mixed conduction.

  15. Milestone report on MD potential development for uranium silicide

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Jianguo [Idaho National Lab. (INL), Idaho Falls, ID (United States). Fuel Modeling and Simulation Dept.; Zhang, Yongfeng [Idaho National Lab. (INL), Idaho Falls, ID (United States). Fuel Modeling and Simulation Dept.; Hales, Jason Dean [Idaho National Lab. (INL), Idaho Falls, ID (United States). Fuel Modeling and Simulation Dept.


    This report summarizes the progress on the interatomic potential development of triuranium-disilicide (U3Si2) for molecular dynamics (MD) simulations. The development is based on the Tersoff type potentials for single element U and Si. The Si potential is taken from the literature and a Tersoff type U potential is developed in this project. With the primary focus on the U3Si2 phase, some other U-Si systems such as U3Si are also included as a test of the transferability of the potentials for binary U-Si phases. Based on the potentials for unary U and Si, two sets of parameters for the binary U-Si system are developed using the Tersoff mixing rules and the cross-term fitting, respectively. The cross-term potential is found to give better results on the enthalpy of formation, lattice constants and elastic constants than those produced by the Tersoff mixing potential, with the reference data taken from either experiments or density functional theory (DFT) calculations. In particular, the results on the formation enthalpy and lattice constants for the U3Si2 phase and lattice constants for the high temperature U3Si (h-U3Si) phase generated by the cross-term potential agree well with experimental data. Reasonable agreements are also reached on the elastic constants of U3Si2, on the formation enthalpy for the low temperature U3Si (m-U3Si) and h-U3Si phases, and on the lattice constants of m-U3Si phase. All these phases are predicted to be mechanically stable. The unary U potential is tested for three metallic U phases (α, β, γ). The potential is found capable to predict the cohesive energies well against experimental data for all three phases. It matches reasonably with previous experiments on the lattice constants and elastic constants of αU.

  16. Silicide-to-silicon specific contact resistance characterization

    NARCIS (Netherlands)

    Stavitski, N.


    The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is

  17. Effects of nitrogen annealing on surface structure, silicide formation ...

    Indian Academy of Sciences (India)

    Author Affiliations. Ganesh K Rajan1 Shivaraman Ramaswamy1 C Gopalakrishnan1 D John Thiruvadigal2. Nanotechnology Research Centre, SRM University, Kancheepuram District 603 203, India; Department of Physics, SRM University, Kancheepuram District 603 203, India ...

  18. Inelastic scattering of neutrons by spin waves in terbium

    DEFF Research Database (Denmark)

    Bjerrum Møller, Hans; Houmann, Jens Christian Gylden


    Measurements of spin-wave dispersion relations for magnons propagating in symmetry directions in ferromagnetic Tb; it is first experiment to give detailed information on magnetic excitations in heavy rare earths; Tb was chosen for these measurements because it is one of few rare-earth metals whic...... does not have very high thermal-neutron capture cross section, so that inelastic neutron scattering experiments can give satisfactory information on magnon dispersion relations....

  19. Coherent magnetic structures in terbium/holmium superlattices

    DEFF Research Database (Denmark)

    Bryn-Jacobsen, C.; Cowley, R.A.; McMorrow, D.F.


    Neutron-scattering techniques have been used to investigate the magnetic properties of three Tb/Ho superlattices grown by molecular-beam epitaxy. It is revealed that for temperatures in the range T = 10 to T-N(Ho)approximate to 130 K, there is a basal-plane ferromagnetic alignment of Tb moments w...

  20. Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Zhi-Qiang, E-mail: [School of Physical Science and Technology, ShanghaiTech University, 100 Haike Road, Pudong, Shanghai, 201210 (China); Li, Xu; Liu, Xiao-Yong; Shi, Kai-Juan; Guo, Xin-Qiu [Analytical and Testing Center, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)


    Highlights: • The α-FeSi{sub 2} nanowires epitaxially grown on Si(110) can be stable up to 750 °C. • The stable temperature of the nanowires is much lower than that of the bulk α-FeSi{sub 2} due to their small size and high relative surface area. • With increasing annealing temperature, the α-FeSi{sub 2} nanowires undergo an Ostwald ripening process and transform into large β-FeSi{sub 2} nanorods or three-dimensional nanocrystals. • The reduction in surface energy drives the transformation from metallic α-FeSi{sub 2} phase to semiconducting β-FeSi{sub 2} phase. - Abstract: Metallic α-FeSi{sub 2} nanowires (NWs) are epitaxially grown on Si(110) at 650 °C. Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy. The NWs are stable up to 750 °C, which is much lower than that of the bulk α-FeSi{sub 2}. With further increasing the annealing temperature, some NWs begin to shrink in length and transform into wider and higher semiconducting β-FeSi{sub 2} nanorods or three-dimensional (3D) islands at 925 °C. The phase transformation is driven by the reduction in surface energy. On the other hand, some α-FeSi{sub 2} NWs begin to dissolve and become thinner until disappearing. The growth of the β-FeSi{sub 2} nanorods or 3D nanocrystals follows the Ostwald ripening mechanism, i.e., the large islands grow in size at the expense of the small ones. X-ray photoelectron spectroscopy study shows that the Fe 2p peaks of β-FeSi{sub 2} nanocrystals exhibit a negative shift of 0.2 eV with respect to the α-FeSi{sub 2} NWs.

  1. Tungsten/Magnesium silicide multilayers for soft x-ray optics. (United States)

    Boher, P; Houdy, P; Kühne, M; Müller, P; Barchewitz, R; Delaboudiniere, J P; Smith, D J


    W/Mg2Si multilayers for soft x-ray optics above the MgKα and MgLα lines have been deposited by RF sputtering. Their structural characteristics have been deduced from in situ kinetic ellipsometry, ex situ grazing x-ray reflection measurements, and high-resolution electron microscopy. Their soft x-ray performances have been measured by synchrotron radiation around the MgKα and MgLα lines and related to the structural characteristics. For short wavelengths, first Bragg peak reflectivities as high as 31% have been measured for multilayers with double period equal to 84 Å. For samples with smaller layer thicknesses, these performances decrease due to finite interdiffusion at the interfaces. Nevertheless, well-defined Bragg peaks are observed even when the double period is as low as 44 Å. Near the MgLα line, more than 20% reflectivity at the first Bragg peak has been measured at normal incidence. At the same wavelength the selectivity is two times higher than that of conventional systems such as Mo/Si.

  2. Role of milling parameters and impurity on the thermoelectric properties of mechanically alloyed chromium silicide

    Energy Technology Data Exchange (ETDEWEB)

    Dasgupta, T. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Umarji, A.M. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)], E-mail:


    Mechanical alloying of Cr-Si powders (1:2 molar ratio) was carried out under different milling conditions using stainless steel milling media. In addition to formation of nanocrystalline CrSi{sub 2} phase, depending on the milling duration, speed and use of dispersant, X-ray diffraction revealed presence of CrSi phase and EDAX showed iron contamination in varying amounts. The amount of contamination and the secondary phase are found to be linearly proportional to the input impact energy during milling. The nanocrystalline powders are seen to be thermally stable in air up to 900 K. SEM of the hot pressed powders reveal an equiaxed microstructure with grain size depending on the milling duration. Electrical resistivity ({rho}), Seebeck coefficient (S) and thermal conductivity (K) were measured up to 700 K. It is seen that the thermoelectric figure of merit (ZT) is high when the amount of secondary phases is minimum. The maximum ZT observed in the samples is {approx}0.2 at 600 K which is comparable to other high temperature thermoelectric materials in the temperature range studied.

  3. Comparison of the Thermal Expansion Behavior of Several Intermetallic Silicide Alloys Between 293 and 1523 K (United States)

    Raj, S. V.


    Thermal expansion measurements were conducted on hot-pressed CrSi2, TiSi2, WSi2 and a two-phase Cr-Mo-Si intermetallic alloy between 303 and 1523 K during three heat-cool cycles. The corrected thermal expansion, (Δ L/ L 0)thermal, varied with the absolute temperature, T, as where, A, B, C, and D are regression constants. Excellent reproducibility was observed for most of the materials after the first heat-up cycle. In some cases, the data from first heat-up cycle deviated from those determined in the subsequent cycles. This deviation was attributed to the presence of residual stresses developed during processing, which are relieved after the first heat-up cycle.

  4. Development of Low-Noise High Value Chromium Silicide Resistors for Cryogenic Detector Applications (United States)

    Jhabvala, Murzy; Babu, Sachi; Monroy, Carlos; Darren, C.; Krebs, Carolyn A. (Technical Monitor)


    Extremely high sensitivity detectors, such as silicon bolometers are required in many NASA missions for detection of photons from the x-ray to the far infrared regions. Typically, these detectors are cooled to well below the liquid helium (LHe) temperature (4.2 K) to achieve the maximum detection performance. As photoconductors, they are generally operated with a load resistor and a pre-set bias voltage, which is then coupled to the input gate of a source-follower Field Effect Transistor (FET) circuit. It is imperative that the detector system signal to noise performance be limited by the noise of the detector and not by the noise of the external components. The load resistor value is selected to optimize the detector performance. These two criteria tend to be contradictory in that these detectors require load resistors in the hundreds of megaohms, which leads to a higher Johnson noise. Additionally, the physical size of the resistor must be small for device integration as required by such missions as the NASA High Resolution Airborne Wide-Band Camera (HAWC) instrument and the Submillimeter High Angular Resolution Camera (SHARC) for the Caltech Submillimeter Observatory (CSO). We have designed, fabricated and characterized thin film resistors using a CrSi/TiW/Al metal system on optical quality quartz substrates. The resistor values range from 100 megaohms to over 650 megaohms and are Johnson noise limited at LHe temperatures. The resistor film is sputtered with a sheet resistance ranging from 300 ohms to 1600 ohms and the processing sequence developed for these devices allows for chemically fine tuning the sheet resistance in-situ. The wafer fabrication process was of sufficiently high yield (>80%) providing clusters of good resistors for integrated multiple detector channels, a very important feature in the assembly of these two instruments.

  5. Mechanical Properties of Uranium Silicides by Nanoindentation and Finite Elements Modeling (United States)

    Carvajal-Nunez, U.; Elbakhshwan, M. S.; Mara, N. A.; White, J. T.; Nelson, A. T.


    Three methods were used to measure the mechanical properties of {U}3{Si}, {U}_3{Si}2, and USi. Quasi-static and continuous stiffness measurement nanoindentation were used to determine hardness and Young's modulus, and microindentation was used to evaluate the bulk hardness. Hardness and Young's modulus of the three U-Si compounds were both observed to increase with Si content. Finally, finite elements modelling was used to validate the nanoindentation data calculated for {U}3{Si}2 and estimate its yield strength.

  6. Pulsed laser synthesis of titanium silicides using a Q-Switched Nd: Glass laser (United States)

    D'Anna, E.; Leggieri, G.; Luches, A.; Luby, S.; Zemek, J.


    Titanium films 120 nm thick deposited on single-crystalline silicon (c-Si) as well as poly-Si/SiO2/c-Si substrates were subjected to Nd: glass laser irradiation. Laser fluences of 1,1.5, and 2 J/cm2 were used at the pulse duration of 30 ns. From RBS analysis it follows that on c-Si substrate titanium suicide is formed using one pulse of 1.5 J/cm2 energy density. On the substrate with surface overlayers lower fluence (1 J/cm2) was sufficient. Under these conditions the sheet resistance of the samples decreased from the initial value 5 Ω/□ to 2 3 Ω/□. The smaller threshold density of energy for suicide formation in Ti/polySi/SiO2/c-Si structure is shown to be a consequence of the SiO2 underlayer, which is a poorer heat conductor than silicon. The experimental results of the suicide synthesis are in semi-quantitative accordance with the numerical computations of the temperature vs time evolution and depth temperature distribution in our samples.

  7. Silicide formation by furnace annealing of thin Si films on large-grained Ni substrates (United States)

    Brunner, A. J.; Ma, E.; Nicolet, M.-A.


    Si films with a thickness of approximately 250 nm have been electron-beam evaporated on thick, large-grained Ni substrates (grain size a few mm to 1 cm in diameter). An in situ sputter cleaning procedure has been used to clean the Ni surface before the Si deposition. Thermal annealings have been performed in a vacuum furnace. Ni2Si is the first phase that grows at temperatures between 240 °C and 300 °C as a laterally uniform interfacial layer with a diffusion-controlled kinetics. The layer thickness x follows the growth law x 2= kt, with k=k 0 exp(- E a k B T), where k 0=6.3 × 10-4cm 2/s and E a=(1-1±0.1) eV. Because of the virtually infinite supply of Ni, annealing at 800 °C for 130min yields a Ni-based solid solution as the final phase. The results are compared with those reported in the literature on suicide formation by the reaction of a thin Ni film on Si substrates, as well as with those for interfacial phase formation in Ni/Zr bilayers.

  8. Sputter behaviour of vanadium silicide studied by a computer simulation technique

    Energy Technology Data Exchange (ETDEWEB)

    Fritzsch, B.; Zehe, A.; Samoylov, V.N.


    A detailed study of the sputter yield of VSi/sub 2/ has been carried out by a computer simulation technique. Krypton and neon ions in the energy range of 200 - 5000 eV are used, and the angle of incidence on the (0001) surface of VSi/sub 2/ is taken to be 90/sup 0/. The dynamical atom block considered in the computer program consists of 397 atoms situated at 5 equally spaced layers. Both amorphous and crystalline targets are discussed, having expectingly a different outcome for yield, as well as for preferential and directional sputtering. Theoretical results are in good accord with experimental findings.

  9. Electrophoretic deposition of magnesium silicates on titanium implants: Ion migration and silicide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Afshar-Mohajer, M. [Center for Advanced Manufacturing and Material Processing, Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603 (Malaysia); Yaghoubi, A., E-mail: [Center for High Impact Research, University of Malaya, Kuala Lumpur 50603 (Malaysia); Ramesh, S., E-mail: [Center for Advanced Manufacturing and Material Processing, Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603 (Malaysia); Bushroa, A.R.; Chin, K.M.C.; Tin, C.C. [Center for Advanced Manufacturing and Material Processing, Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603 (Malaysia); Chiu, W.S. [Low Dimensional Materials Research Center, Department of Physics, University of Malaya, Kuala Lumpur 50603 (Malaysia)


    Magnesium silicates (Mg{sub x}SiO{sub y}) and in particular forsterite (Mg{sub 2}SiO{sub 4}) owing to their low thermal expansion mismatch with metals are promising materials for bioactive coating of implants. Here, we report the electrophoretic deposition (EPD) of forsterite onto titanium substrates using different precursors. Unlike bulk samples which achieve full stoichiometry only beyond 1400 °C, non-stoichiometric magnesium silicate rapidly decomposes into magnesium oxide nanowires during sintering. Elemental mapping and X-ray diffraction suggest that oxygen diffusion followed by ion exchange near the substrate leads to formation of an interfacial Ti{sub 5}Si{sub 3} layer. Pre-annealed forsterite powder on the other hand shows a comparatively lower diffusion rate. Overall, magnesium silicate coatings do not exhibit thermally induced microcracks upon sintering as opposed to calcium phosphate bioceramics which are currently in use.

  10. Thin film molybdenum silicide as potential temperature sensors for turbine engines (United States)

    Ho, C. H.; Prakash, S.; Deshpandey, C. V.; Doerr, H. J.; Bunshah, R. F.


    Temperature measurements of Mo-Si-based thin-film resistance thermometers were studied. Annealing in an argon ambient at a temperature above 1000 C for at least 1 h is required to form the stable tetragonal MoSi2 phase. With a crack-free 2-micron-thick AlN barrier layer on top, a sensor was tested up to 1200 C. The resistivity vs temperature characteristic shows the room temperature resistivity and temperature coefficient of resistivity (TCR) of the sensor to be approximately 350 microohm and 0.01195 K, respectively. No film adhesion problems were observed for at least four testing cycles.

  11. Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, Alexander; Florent, Karine; Tapriya, Astha; Lee, Benjamin G.; Kurinec, Santosh K.; Young, David L.


    Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.

  12. Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Abhijit; Beese, Emily; Saenz, Theresa; Warren, Emily; Nemeth, William; Young, David; Marshall, Alexander; Florent, Karine; Kurinec, Santosh K.; Agarwal, Sumit; Stradins, Pauls


    NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.

  13. Loading rate and test temperature effects on fracture of In Situ niobium silicide-niobium composites (United States)

    Rigney, Joseph D.; Lewandowski, John J.


    Arc cast, extruded, and heat-treated in situ composites of niobium suicide (Nb5Si3) intermetallic with niobium phases (primary—Nbp and secondary—Nbs) exhibited high fracture resistance in comparison to monolithic Nb5Si3. In toughness tests conducted at 298 K and slow applied loading rates, the fracture process proceeded by the microcracking of the Nb5Si3 and plastic deformation of the Nbp and Nbs phases, producing resistance-curve behavior and toughnesses of 28 MPa√m with damage zone lengths less than 500 μm. The effects of changes in the Nbp yield strength and fracture behavior on the measured toughnesses were investigated by varying the loading rates during fracture tests at both 77 and 298 K. Quantitative fractography was utilized to completely characterize each fracture surface created at 298 K in order to determine the type of fracture mode ( i.e., dimpled, cleavage) exhibited by the Nbp. Specimens tested at either higher loading rates or lower test temperatures consistently exhibited a greater amount of cleavage fracture in the Nbp, while the Nbs, always remained ductile. However, the fracture toughness values determined from experiments spanning six orders of magnitude in loading rate at 298 and 77 K exhibited little variation, even under conditions when the majority of Nbp phases failed by cleavage at 77 K. The changes in fracture mode with increasing loading rate and/or decreasing test temperature and their effects on fracture toughness are rationalized by comparison to existing theoretical models.

  14. MOKE investigation of silicide films ion-beam synthesized in single-crystal silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gumarov, G.G., E-mail: [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Kazan (Volga Region) Federal University, Kremlyovskaya St. 18, 420008 Kazan (Russian Federation); Petukhov, V.Yu., E-mail: [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Kazan (Volga Region) Federal University, Kremlyovskaya St. 18, 420008 Kazan (Russian Federation); Gumarov, A.I., E-mail: [Kazan (Volga Region) Federal University, Kremlyovskaya St. 18, 420008 Kazan (Russian Federation); Khalikov, R.A., E-mail: [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Konovalov, D.A., E-mail: [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Valeev, V.F., E-mail: [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Khaibullin, R.I., E-mail: [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Kazan (Volga Region) Federal University, Kremlyovskaya St. 18, 420008 Kazan (Russian Federation)


    Magnetic-field-assisted ion-beam synthesis was used to produce thin magnetic films. Si wafers were implanted with 40 keV Fe{sup +} ions with a fluence of 3 Multiplication-Sign 10{sup 17} cm{sup -2} in the external magnetic field of 9.6 Multiplication-Sign 10{sup 4} A/m. The samples were investigated by scanning magneto-optical Kerr effect magnetometry, inductive magnetometry and reflection high-energy electron diffraction. The main synthesized phase was ferromagnetic Fe{sub 3}Si. In some regions of the samples the deviations of the easy magnetic axis near the applied magnetic field were revealed. These local changes can be caused by various reasons: the presence of mechanical stresses in a silicon substrate during the ion bombardment, the appearance of temperature gradients, inhomogeneous sputtering and the appearance of small magnetic fields in the chamber of the accelerator.

  15. High-Temperature Compatible Nickel Silicide Thermometer And Heater For Catalytic Chemical Microreactors

    DEFF Research Database (Denmark)

    Jensen, Søren; Quaade, U.J.; Hansen, Ole


    for temperatures exceeding 700 °C. The heaters and thermometers are integrated with chemical microreactors for heterogeneous catalytic conversion of gasses, and thermally activated catalytic conversion of CO to CO2 in the reactors is demonstrated. The heaters and thermometers are shown to be compatible...

  16. Pressure-induced structural transformations of the Zintl phase sodium silicide (United States)

    Cabrera, Raúl Quesada; Salamat, Ashkan; Barkalov, Oleg I.; Leynaud, Olivier; Hutchins, Peter; Daisenberger, Dominik; Machon, Denis; Sella, Andrea; Lewis, Dewi W.; McMillan, Paul F.


    The high-pressure behaviour of NaSi has been studied using Raman spectroscopy and angle-dispersive synchrotron X-ray diffraction to observe the onset of structural phase transformations and potential oligomerisation into anionic Si nanoclusters with extended dimensionality. Our studies reveal a first structural transformation occurring at 8-10 GPa, followed by irreversible amorphisation above 15 GPa, suggesting the formation of Si-Si bonds with oxidation of the Si - species and reduction of Na + to metallic sodium. We have combined our experimental studies with DFT calculations to assist in the analysis of the structural behaviour of NaSi at high pressure.

  17. Ion beam synthesis and characterization of yttrium silicide in Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Ayache, R. [Pharmacy Department, University of Batna, 05000 (Algeria)], E-mail:; Bouabellou, A. [Laboratoire Couches Minces et Interfaces, Campus Chaab Errassas, Universite Mentouri de Constantine, 25000 (Algeria); Eichhorn, F.; Richter, E.; Muecklich, A. [Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden (Germany)


    Thin YSi{sub 2-x} layers are formed by 195 keV Y ion implantation in Si(111) substrates to a dose of 2 x 10{sup 17} Y{sup +}/cm{sup 2} at 500 deg. C followed by annealing in nitrogen atmosphere at different temperatures for 1 h. The investigation of the phase composition is carried out by Rutherford backscattering spectrometry (RBS), whereas the structural characterization is accomplished by means of both X-ray diffraction (XRD) pole figure and cross-sectional transmission electron microscopy (XTEM). The results show that the YSi{sub 2-x} layers grown on the Si has the epitaxial relationship of YSi{sub 2-x} (0 0 0 1)//Si(111) and YSi{sub 2-x} [1 1 - 2 0 ]//Si [110].

  18. Soft-x-ray fluorescence study of buried silicides in antiferromagnetically coupled Fe/Si multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Carlisle, J.A.; Chaiken, A.; Michel, R.P. [Lawrence Berkeley National Lab., CA (United States)] [and others


    Multilayer films made by alternate deposition of two materials play an important role in electronic and optical devices such as quantum-well lasers and x-ray mirrors. In addition, novel phenomena like giant magnetoresistance and dimensional crossover in superconductors have emerged from studies of multilayers. While sophisticated x-ray techniques are widely used to study the morphology of multilayer films, progress in studying the electronic structure has been slower. The short mean-free path of low-energy electrons severely limits the usefulness of photoemission and related electron free path of low-energy electrons severely limit spectroscopies for multilayer studies. Soft x-ray fluorescence (SXF) is a bulk-sensitive photon-in, photon-out method to study valence band electronic states. Near-edge x-ray absorption fine-structure spectroscopy (NEXAFS) measured with partial photon yield can give complementary bulk-sensitive information about unoccupied states. Both these methods are element-specific since the incident x-ray photons excite electrons from core levels. By combining NEXAFS and SXF measurements on buried layers in multilayers and comparing these spectra to data on appropriate reference compounds, it is possible to obtain a detailed picture of the electronic structure. Results are presented for a study of a Fe/Si multilayer system.

  19. Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates (United States)

    Zou, Zhi-Qiang; Li, Xu; Liu, Xiao-Yong; Shi, Kai-Juan; Guo, Xin-Qiu


    Metallic α-FeSi2 nanowires (NWs) are epitaxially grown on Si(110) at 650 °C. Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy. The NWs are stable up to 750 °C, which is much lower than that of the bulk α-FeSi2. With further increasing the annealing temperature, some NWs begin to shrink in length and transform into wider and higher semiconducting β-FeSi2 nanorods or three-dimensional (3D) islands at 925 °C. The phase transformation is driven by the reduction in surface energy. On the other hand, some α-FeSi2 NWs begin to dissolve and become thinner until disappearing. The growth of the β-FeSi2 nanorods or 3D nanocrystals follows the Ostwald ripening mechanism, i.e., the large islands grow in size at the expense of the small ones. X-ray photoelectron spectroscopy study shows that the Fe 2p peaks of β-FeSi2 nanocrystals exhibit a negative shift of 0.2 eV with respect to the α-FeSi2 NWs.

  20. Photoluminescence studies of a Terbium(III) complex as a fluorescent probe for DNA detection

    Energy Technology Data Exchange (ETDEWEB)

    Khorasani-Motlagh, Mozhgan, E-mail:; Noroozifar, Meissam; Niroomand, Sona; Moodi, Asieh


    The photoluminescence properties of a Tb(III) complex of the form [Tb(phen){sub 2}Cl{sub 3}·OH{sub 2}] (phen=1,10-phenanthroline) in different solvents are presented. It shows the characteristic luminescence of the corresponding Ln{sup 3+} ion in the visible region. The emission intensity of this complex in coordinating solvent is higher than non-coordinating one. The suggested mechanism for the energy transfer between the ligand and Tb{sup 3+} ion is the intramolecular energy transfer mechanism. The interactions of the Tb(III) complex with fish salmon DNA are studied by fluorescence spectroscopy, circular dichroism study and viscosity measurements. The results of fluorescence titration reveal that DNA strongly quenches the intrinsic fluorescence of the complex through a static quenching procedure. The binding constant (K{sub b}) of the above metal complex at 25 °C is determined by the fluorescence titration method and it is found to be (8.06±0.01)×10{sup 3} M{sup −1}. The thermodynamic parameters (ΔH{sup 0}>0, ΔS{sup 0}>0 and ΔG{sup 0}<0) indicate that the hydrophobic interactions play a major role in DNA–Tb complex association. The results support the claim that the title complex bonds to FS-DNA by a groove mode. -- Highlights: • Photoluminescence of [Tb(phen){sub 2}Cl{sub 3}·OH{sub 2}] in different solvents are studied. • Tb(III) complex shows good binding affinity to FS DNA with K{sub b}=(8.06±0.01)×10{sup 3} M{sup −1}. • Viscosity of DNA almost unchanged by increasing amount of Tb complex. • CD spectrum of DNA has a little change with increasing amount of Tb complex. • Thermodynamic parameters indicate that the binding reaction is entropically driven.

  1. Lanthanides in Nuclear Medicine. The Production of Terbium-149 by Heavy Ion Beams

    CERN Document Server

    Dmitriev, S N; Zaitseva, N G; Maslov, O D; Molokanova, L G; Starodub, G Ya; Shishkin, S V; Shishkina, T V


    Among radioactive isotopes of lanthanide series elements, finding the increasing using in nuclear medicine, alpha-emitter {149}Tb (T_{1/2} = 4.118 h; EC 76.2 %; beta^+ 7.1 %; alpha 16.7 %) is considered as a perspective radionuclide for radioimmunotherapy. The aim of the present work is to study experimental conditions of the {149}Tb production in reactions Nd({12}C, xn){149}Dy (4.23 min; beta^+, EC)\\to {149}Tb when the Nd targets have been irradiated by heavy ions of carbon. On the basis of results of formation and decay of {149}Dy\\to{149}Tb evaluation of the {149}Tb activity, is made which can be received under optimum conditions (enriched {142}Nd target, {12}C ions with the energy 120 MeV and up to current 100 mu A, time of irradiating 8-10 hours). Under these conditions {149}Tb can be obtained up to 30 GBq (up to 0.8 Ci).

  2. Poly[[aqua-?3-picolinato-?2-picolinato-dipicolinatopotassium(I)terbium(III)] 2.5-hydrate


    Filipe A. Almeida Paz; João Rocha; Jacek Klinowski; Tito Trindade; Nogueira,Helena I. S.; Soares-Santos, Paula C. R.; Cunha-Silva, Lu?s


    In the title compound, [KTb(C6H4NO2)4(H2O)]·2.5H2O, each Tb3+ centre is coordinated by four N and five O atoms from five distinct picolinate ligands in a geometry resembling a highly distorted tricapped trigonal prism. One of the ligands establishes a skew bridge between neighbouring Tb3+ centres, leading to the formation of one-dimensional anionic polymeric chains, {[(C6H4NO2)4Tb]−}n, running along the direction [010]. Each K+ cation is seven-coordinated by six O atoms from one an...

  3. Spin waves in terbium. III. Magnetic anisotropy at zero wave vector

    DEFF Research Database (Denmark)

    Houmann, Jens Christian Gylden; Jensen, J.; Touborg, P.


    The energy gap at zero wave vector in the spin-wave dispersion relation of ferromagnetic. Tb has been studied by inelastic neutron scattering. The energy was measured as a function of temperature and applied magnetic field, and the dynamic anisotropy parameters were deduced from the results....... The axial anisotropy is found to depend sensitively on the orientation of the magnetic moments in the basal plane. This behavior is shown to be a convincing indication of considerable two-ion contributions to the magnetic anisotropy at zero wave vector. With the exception of the sixfold basal...... the effects of zero-point deviations from the fully aligned ground state, and we tentatively propose polarization-dependent two-ion couplings as their origin....

  4. Structural and Magnetic Anisotropy in Amorphous Terbium-Iron Thin Films (United States)

    Hufnagel, Todd Clayton


    High density, removable media magnetooptic disk drives have recently begun to make significant gains in the information mass storage market. The media in these disks are amorphous rare-earth/transition-metal (RE-TM) alloys. One vital property of these materials is a large perpendicular magnetic anisotropy; that is, an easy axis of magnetization which is perpendicular to the plane of the film. A variety of theories, sometimes contradictory, have been proposed to account for this surprising presence of an anisotropic property in an amorphous material. Recent research indicates that there is an underlying atomic-scale structural anisotropy which is responsible for the observed magnetic anisotropy. Several different types of structural anisotropy have been proposed to account for the observed magnetic anisotropy, including pair-ordering anisotropy (anisotropic chemical short-range order) and bond orientation anisotropy (an anisotropy in coordination number or distances independent of chemical ordering). We have studied the structural origins of perpendicular magnetic anisotropy in amorphous Tb-Fe thin films by employing high-energy and anomalous dispersion x-ray scattering. The as-deposited films show a clear structural anisotropy, with a preference for Tb-Fe near neighbors to align in the out-of-plane direction. These films also have a large perpendicular magnetic anisotropy. Upon annealing, the magnetic anisotropy energy drops significantly, and we see a corresponding reduction in the structural anisotropy. The radial distribution functions indicate that the number of Tb-Fe near-neighbors increases in the in-plane direction, but does not change in the out-of-plane direction. Therefore, the distribution of Tb-Fe near-neighbors becomes more uniform upon annealing. We propose that the observed reduction in perpendicular magnetic anisotropy energy is a result of this change in structure. Our results support the pair -ordering anisotropy model of the structural anisotropy in amorphous Tb-Fe thin films. We see no evidence to support the bond orientation anisotropy model.

  5. Luminescence properties of terbium-doped Li3PO4 phosphor for ...

    Indian Academy of Sciences (India)

    Antonov-Romanovskii et al [2] firstly suggested applications of OSL for personal dosime- try. This technique got momentum for personnel dosime- try after the development of α-Al2O3:C. OSL properties of α-Al2O3:C have been investigated for personnel dosimetry, environmental dosimetry, medical dosimetry and space.

  6. Luminescence properties of terbium-doped Li3PO4 phosphor for ...

    Indian Academy of Sciences (India)

    The powder X-ray diffraction (PXRD), photoluminescence (PL) emission and excitation spectra, thermoluminescence (TL) and optically stimulated luminescence (OSL) were measured. The particle size was calculated using the Debye Scherrer formula and found to be 79.42 nm. PL emission spectra of Li 3 PO 4 :Tb 3 + ...

  7. Charge-transfer-based terbium MOF nanoparticles as fluorescent pH sensor for extreme acidity. (United States)

    Qi, Zewan; Chen, Yang


    Newly emerged metal organic frameworks (MOFs) have aroused the great interest in designing functional materials by means of its flexible structure and component. In this study, we used lanthanide Tb 3+ ions and small molecular ligands to design and assemble a kind of pH-sensitive MOF nanoparticle based on intramolecular-charge-transfer effect. This kind of made-to-order MOF nanoparticle for H + is highly specific and sensitive and could be used to fluorescently indicate pH value of strong acidic solution via preset mechanism through luminescence of Tb 3+ . The long luminescence lifetime of Tb 3+ allows eliminating concomitant non-specific fluorescence by time-revised fluorescence techniques, processing an advantage in sensing H + in biological media with strong autofluorescence. Our method showed a great potential of MOF structures in designing and constructing sensitive sensing materials for specific analytes directly via the assembly of functional ions/ligands. Copyright © 2016 Elsevier B.V. All rights reserved.

  8. Assessment of terbium (III) as a luminescent probe for the detection of tuberculosis biomarkers

    Energy Technology Data Exchange (ETDEWEB)

    Bamogo, W. [CNRS, IRAMIS, UMR 3685 NIMBE/LEDNA, F-91191 Gif-sur-Yvette (France); Mugherli, L. [CEA, IRAMIS, UMR 3685 NIMBE/LEDNA, F-91191 Gif-sur-Yvette (France); Banyasz, A. [CNRS, IRAMIS, LIDyL/Laboratoire Francis Perrin, URA 2453, F-91191 Gif-sur-Yvette (France); Novelli-Rousseau, A.; Mallard, F. [BioMérieux SA, F-38000 Grenoble (France); Tran-Thi, T.-H., E-mail: [CNRS, IRAMIS, UMR 3685 NIMBE/LEDNA, F-91191 Gif-sur-Yvette (France)


    A detection method for nicotinic acid, a specific metabolite marker of Mycobacterium tuberculosis present in cultures and patients' breath, is studied in complex solutions containing other metabolites and in biological media such as urine, saliva and breath condensate. The method is based on the analysis of the luminescence increase of Tb{sup 3+} complexes in the presence of nicotinic acid due to the energy transfer from the excited ligand to the lanthanide ion. It is shown that other potential markers found in M. tuberculosis culture supernatant, such as methyl phenylacetate, p-methyl anisate, methyl nicotinate and 2-methoxy biphenyl, can interfere with nicotinic acid via a competitive absorption of the excitation photons. A new strategy to circumvent these interferences is proposed with an upstream trapping of volatile markers preceding the detection of nicotinic acid in the liquid phase via the luminescence of Tb{sup 3+} complexes. The cost of the method is evaluated and compared with the Xpert MTB/RIF test endorsed by the World Health Organization. - Highlights: • Nicotinic acid, a specific marker of M. tuberculosis, can be detected via luminescence. • The detection limit with a commercial phosphorimeter is 0.4 µmol·L{sup -1}. • Other metabolites of M. tuberculosis can interfere via absorbed excitation light. • The interference can be removed via trapping of the most volatile metabolites. • A breath analysis procedure's cost is compared with the Xpert TBM/RIF test.

  9. A highly porous luminescent terbium-organic framework for reversible anion sensing

    Energy Technology Data Exchange (ETDEWEB)

    Wong, K.L.; Law, G.L.; Wong, W.T. [Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Yang, Y.Y. [School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275 (China)


    Unique tailored porous frameworks incorporating a lanthanide metal center have been designed to function as chemical detectors. A flexible multidentate ligand, mucic acid, is used to differentiate between several anions, thus creating an organic framework that is ideally suited for applications in gas separation, sensors, and chemical switches. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  10. Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices


    Montañez Huamán, Liz Margarita


    En el presente trabajo de investigación se ha estudiado propiedades estequiometrias, estructurales y de emisión de luz de semiconductor de amplio ancho de banda dopados con terbio. La difracción de rayos-X en ángulo rasante confirma el estado amorfo de las películas. Los espectros de absorción infrarroja muestran la formación de óxidos en las películas y la espectroscopia de foto-electrones de rayos-X revela la formación de oxinitruro de aluminio y oxicarburo de silicio. Las pe...

  11. Synthesis and characterization of terbium-doped SrSnO3 pigments

    Czech Academy of Sciences Publication Activity Database

    Dohnalová, Ž.; Gorodylova, N.; Šulcová, P.; Vlček, Milan


    Roč. 40, č. 8 (2014), s. 12637-12645 ISSN 0272-8842 Institutional support: RVO:61389013 Keywords : pigments * solid state reaction * perovskites Subject RIV: CA - Inorganic Chemistry Impact factor: 2.605, year: 2014

  12. An optical material for the detection of β-hydroxybutyrate based on a terbium complex (United States)

    Wang, Xiaomiao; Chen, Huili; Li, Hua


    A novel Tb3+ complex (Tb(C14H10O4)ṡCl, TbL2) based on benzoic acid (L+H) was successfully synthesized, and gave a weak green emission in methanol-water (V:V, 4:1, pH 4.49). With the addition of β-hydroxybutyrate (β-HB) to a semi-aqueous solution of TbL2, an increment of the luminescent intensity at 545 nm assigned to 5D4 → 7F5 transition of Tb3+ was measured, which was evident to the naked eye. The response showed high selectivity for β-HB compared with other common anions including Cl-, NO3-, CO32-, PO43-, HPO42-, HPO4-, CO42-, PO74-, SO42-, lactate, AcO-, citrate, malate therefore it has the potential to be applied as a luminescent sensor for β-HB.

  13. The platinum-rich scandium silicide Sc{sub 2}Pt{sub 9}Si{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Vosswinkel, Daniel; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie


    Single crystals of Sc{sub 2}Pt{sub 9}Si{sub 3} have been obtained from an arc-melted and inductively annealed sample of the starting composition Sc:4Pt:2Si. The Sc{sub 2}Pt{sub 9}Si{sub 3} structure (Tb{sub 2}Pt{sub 9}Ge{sub 3} type, space group C2/c) was refined from single crystal X-ray diffractometer data: a=1303.4(1), b=749.9(1), c=973.5(1), β=116.44(1) {sup circle}, wR2=0.0731, 1643 F{sup 2} values and 67 variables. The structure contains three basic coordination polyhedra Sc rate at Pt{sub 11}, Si1 rate at Pt{sub 8} and Si2 rate at Pt{sub 8} which show a simple condensation pattern avoiding direct Sc-Si and Si-Si bonding.

  14. Thermal transport across metal silicide-silicon interfaces: First-principles calculations and Green's function transport simulations (United States)

    Sadasivam, Sridhar; Ye, Ning; Feser, Joseph P.; Charles, James; Miao, Kai; Kubis, Tillmann; Fisher, Timothy S.


    Heat transfer across metal-semiconductor interfaces involves multiple fundamental transport mechanisms such as elastic and inelastic phonon scattering, and electron-phonon coupling within the metal and across the interface. The relative contributions of these different transport mechanisms to the interface conductance remains unclear in the current literature. In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi2-Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used "mixing rules" to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Green's function (RGF) method with Büttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that cross-interface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi2-Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with predictions that include all transport processes: elastic and inelastic phonon scattering, electron-phonon coupling in the metal, and electron-phonon coupling across the interface.

  15. pH dependent photophysical studies of new europium and terbium complexes of tripodal ligand: Experimental and semiempirical approach

    Energy Technology Data Exchange (ETDEWEB)

    Akbar, Rifat [Department of Chemistry, Sant Longowal Institute of Engineering & Technology, Longowal, Punjab 148106 (India); Baral, Minati [Department of Chemistry, National Institute of Technology Kurukshetra, Haryana 136119 (India); Kanungo, B K, E-mail: [Department of Chemistry, Sant Longowal Institute of Engineering & Technology, Longowal, Punjab 148106 (India)


    The photophysical properties of adduct of a novel nonadentate tripodal ligand, 5,5′-(2-(((8-hydroxyquinolin-5-yl)methylamino)methyl)-2-methylpropane-1, 3-diyl)bis(azanediyl)bis(methylene diquinolin-8-ol, (TAME5OX), with Eu{sup 3+} and Tb{sup 3+} metal ions have been probed for photonics applications. The absorption spectroscopy of these complexes show remarkable spectral changes due to characteristic lanthanide transitions, which support the use of TAME5OX as a sensitive optical pH based sensor to detect Ln{sup 3+} metal ions in biological systems. In addition, these complexes have also been shown to exhibit strong green fluorescence allowing simultaneous sensing within the visible region under physiological pH in competitive medium for both Eu{sup 3+} and Tb{sup 3+} ions. The intense fluorescence from these compounds were revealed to intermittently get quenched under acidic as well as basic conditions due to the photoinduced intramolecular electron transfer from excited 8-hydroxyquinoline (8-HQ) moiety to metal ion, just an opposite process. This renders these compounds the OFF–ON–OFF type of pH-dependent fluorescent sensor. The thermodynamic stability and aqueous coordination chemistry of the chelator with the said lanthanide ions have also been probed by potentiometric, UV–visible and fluorescence spectrophotometric method. TAME5OX has been found to form two protonated complexes [Ln(H{sub 5}L)]{sup 5+} and [Ln(H{sub 4}L)]{sup 4+} below pH 2.5 with both metal ions, which consecutively deprotonates through one proton process with rise of pH. The formation constants (log β{sub 11n}) of neutral complexes have been determined to be 33.51 and 32.16 with pLn (pLn=−log[Ln{sup 3+}]) values of 16.14 and 19.48 for Eu{sup 3+} and Tb{sup 3+} ions, respectively, calculated at pH 7.4, indicating TAME5OX is a good lanthanide synthetic chelator. The emission lifetimes of the Eu{sup 3+} and Tb{sup 3+} complexes recorded in D{sub 2}O and H{sub 2}O suggest the presence of water molecules in the first coordination sphere of the metal ions. NMR titrations were carried out to determine the stoichiometry of chelates. The complexe's coordination geometries were optimized by using PM7 as sparkle/PM7 model. The theoretical electronic behavior was evaluated to support the experimental findings, based on ZINDO/S methodology at configuration interaction with single excitations (CIS) level. These results emphasize the capability of the use of the theoretical models in prediction of geometries and all other calculations of compounds containing lanthanide ions and create new interesting possibilities for the design in-silico of novel and highly efficient lanthanide–organic edifice. - Highlights: • Photophysical behavior of Eu{sup 3+} and Tb{sup 3+} complexes of TAME5OX has been investigated. • This tripodal ligand forms thermodynamically stable Ln{sup 3+} complexes. • These compounds exhibit strong green fluorescence under physiological pH. • Green fluorescence gets quenched under acidic and basic conditions, due to PET process. • This renders these compounds the OFF–ON–OFF type of pH-dependent fluorescent sensors.

  16. Visible photoluminescence in polycrystalline terbium doped aluminum nitride (Tb:AlN) ceramics with high thermal conductivity (United States)

    Wieg, A. T.; Kodera, Y.; Wang, Z.; Imai, T.; Dames, C.; Garay, J. E.


    Thermal management continues to be one of the major challenges in the development of high powered light sources such as solid state lasers. In particular, the relatively low thermal conductivity of standard photoluminescent (PL) materials limits the overall power output and/or duty cycle. We present a method based on current activated pressure assisted densification for the fabrication of high thermal conductivity PL materials: rare earth doped polycrystalline bulk aluminum nitride. Specifically, the ceramics are translucent and are doped with Tb3+, allowing for emission in the visible. Remarkably, the ceramics have a room temperature thermal conductivity of 94 W/(m K) which is almost seven times higher than that of the state of the art host material, Nd-doped yttrium aluminum garnet. These light emitting properties coupled with very high thermal conductivity should enable the development of a wide variety of more powerful light sources.

  17. Preparation of extractive resins for producing terbium-161; Preparacion de resinas extractivas para produccion de terbio-161

    Energy Technology Data Exchange (ETDEWEB)

    De la Cruz B, C. C.; Monroy G, F. [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)], e-mail:


    This paper presents the development of a methodology for extractive resins preparation to base of HDEHP, which allows to separation of Tb from Gd generating an own technology of preparation of these resins. The study included the extractive resins preparation from 6 different supports: kieselguhr Dg, alumina, red volcanic rock, chiluca, quarry and fluorite; two treatment types of of supports and varied concentrations of HDEHP extractant (di(2-etil hexyl) orthophosphoric acid), in order to determine which resin has improved efficiency of Gd and Tb separation, and radionuclide purity of {sup 161}Tb. Resins were prepared to base of kieselguhr to determine the most appropriate silicon deposition process. Two silicon deposition treatments were realized: treatment I , by contact with silicon deposition solution (dimethyldichlorosilane / heptane 1:30) and treatment II by contact with vapors of dimethyldichlorosilane in vacuum. The extractant retention was carried out to different concentrations of HDEHP / acetone: 1:4, 1:8, 1:15, 1:20, 1:30 and 1:40. According to the results, there is not direct relation of HDEHP concentration used in extractive resins preparation to base of kieselguhr over the efficiency of Gd and Tb separation and of radionuclide purity of {sup 161}Tb. The effect of support in the efficiency of Gd and Tb separation was studied to prepare resins with the supports kieselguhr, alumina, quarry, chiluca, volcanic rock and fluorite, using the silicon deposition treatment II for the supports and a concentration of HDEHP / acetone 1:20, for extractant retention. Only resins based on kieselguhr could separate to Gd from Tb quantitatively, the resin at a concentration of HDEHP / Acetone 1:20 was the best results obtained in Gd and Tb separation, achieving a separation efficiency greater than 90% and a radionuclide purity higher than 99%. (Author)

  18. Synthesis and Characterization of Europium(III) and Terbium(III) Complexes: An Advanced Undergraduate Inorganic Chemistry Experiment (United States)

    Swavey, Shawn


    Undergraduate laboratories rarely involve lanthanide coordination chemistry. This is unfortunate in light of the ease with which many of these complexes are made and the interesting and instructive photophysical properties they entail. The forbidden nature of the 4f transitions associated with the lanthanides is overcome by incorporation of…

  19. Sensitized green emission of terbium with dibenzoylmethane and 1, 10 phenanthroline in polyvinyl alcohol and polyvinyl pyrrolidone blends (United States)

    Kumar, Brijesh; Kaur, Gagandeep; Rai, S. B.


    Tb doped polyvinyl alcohol: polyvinyl pyrrolidone blends with dibenzoylmethane (DBM) and 1, 10 Phenanthroline (Phen) have been prepared by solution cast technique. Bond formation amongst the ligands and Tb3 + ions in the doped polymer has been confirmed employing Fourier Transform Infrared (FTIR) techniques. Optical properties of the Tb3 + ions have been investigated using UV-Vis absorption, excitation and fluorescence studies excited by different radiations. Addition of dimethylbenzoate and 1, 10 Phenanthroline to the polymer blend increases the luminescence from Tb3 + ions along with energy transfer from the polymer blend itself. Luminescence decay curve analysis affirms the non-radiative energy transfer from DBM and Phen to Tb3 + ions, which is identified as the reason behind this enhancement. The fluorescence decay time of PVA-PVP host decreases from 6.02 ns to 2.31 ns showing an evidence of energy transfer from the host blend to the complexed Tb ions. Similarly the lifetime of DBM and Phen and both in the blend reduces in the complexed system showing the feasibility of energy transfer from these excited DBM and Phen to Tb3 + and is proposed as the cause of the above observations. These entire phenomena have been explained by the energy level diagram.

  20. A Terbium Metal-Organic Framework for Highly Selective and Sensitive Luminescence Sensing of Hg2+Ions in Aqueous Solution. (United States)

    Xia, Tifeng; Song, Tao; Zhang, Gege; Cui, Yuanjing; Yang, Yu; Wang, Zhiyu; Qian, Guodong


    A series of isomorphic lanthanide metal-organic frameworks (MOFs) Ln(TATAB)⋅(DMF) 4 (H 2 O)(MeOH) 0.5 (LnTATAB, Ln=Eu, Tb, Sm, Dy, Gd; H 3 TATAB=4,4',4''-s-triazine-1,3,5-triyltri-p-aminobenzoic acid) have been solvothermally synthesized and structurally characterized. Among these MOFs, TbTATAB exhibits good water stability and a high fluorescence quantum yield. Because mercury ions (Hg 2+ ) have a high affinity to nitrogen atoms, and the space between multiple nitrogen atoms from triazine and imino groups is suitable for interacting with Hg 2+ ions, TbTATAB shows highly selective and sensitive detection of Hg 2+ in aqueous solution with a detection limit of 4.4 nm. Furthermore, it was successfully applied to detect Hg 2+ ions in natural water samples. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Iron silicide formation at different layers of (Fe/Si){sub 3} multilayered structures determined by conversion electron Mössbauer spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Badía-Romano, L., E-mail:; Bartolomé, J. [Departamento de Física de la Materia Condensada, Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza, E-50009 Zaragoza (Spain); Rubín, J. [Departamento de Ciencia y Tecnología de Materiales y Fluidos, Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza, E-50018 Zaragoza (Spain); Magén, C. [Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragón (INA), Universidad de Zaragoza, E-50018 Zaragoza (Spain); Bürgler, D. E. [Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich GmbH, D-52425 Jülich (Germany)


    The morphology and the quantitative composition of the Fe-Si interface layer forming at each Fe layer of a (Fe/Si){sub 3} multilayer have been determined by means of conversion electron Mössbauer spectroscopy (CEMS) and high-resolution transmission electron microscopy (HRTEM). For the CEMS measurements, each layer was selected by depositing the Mössbauer active {sup 57}Fe isotope with 95% enrichment. Samples with Fe layers of nominal thickness d{sub Fe} = 2.6 nm and Si spacers of d{sub Si} = 1.5 nm were prepared by thermal evaporation onto a GaAs(001) substrate with an intermediate Ag(001) buffer layer. HRTEM images showed that Si layers grow amorphous and the epitaxial growth of the Fe is good only for the first deposited layer. The CEMS spectra show that at all Fe/Si and Si/Fe interfaces a paramagnetic c-Fe{sub 1−x}Si phase is formed, which contains 16% of the nominal Fe deposited in the Fe layer. The bottom Fe layer, which is in contact with the Ag buffer, also contains α-Fe and an Fe{sub 1−x}Si{sub x} alloy that cannot be attributed to a single phase. In contrast, the other two layers only comprise an Fe{sub 1−x}Si{sub x} alloy with a Si concentration of ≃0.15, but no α-Fe.

  2. Interaction mechanism between niobium-silicide-based alloy melt and Y2O3 refractory crucible in vacuum induction melting process

    Directory of Open Access Journals (Sweden)

    Gao Ming


    Full Text Available The Y2O3 crucibles were introduced in the study as an alternative to the traditional ceramic ones in vacuum induction melting of multi-component Nb-16Si-22Ti-2Al-2Hf-17Cr (at.% alloys, to reveal the possible interactions between the alloy melt and the refractory crucible. Multiple melting time lengths and two cooling schemes were designed and used for the experiments. The chemical composition and microstructure of the tested alloy and the melt-crucible interaction were investigated and evaluated. In the experiments, Y2O3 crucible displays good physical-chemical compatibility. The results indicate that the increment of O element in the as-cast ingot is 0.03at.%-0.04at.% (72-97 ppm and the increment of Y element is very insignificant. The key features of the alloy melt interacting with Y2O3 ceramics are analyzed and concluded in the paper. As a result of the dissolution reaction xY2O3 (in molten alloy + (1-xHfO2 (impurity →Hf1-xY2xO2-x, a continuous double-layer solid film consisted of HfO2 solid solution (~2 μm and pure HfO2 (~5 μm is formed on the surface of the test ingot after cooled down in the crucible. The experimental results show that the Y2O3 crucible is applicable to the vacuum induction melting of Nb-Si based alloys.

  3. Oxide meets silicide. Synthesis and single-crystal structure of Ca{sub 21}SrSi{sub 24}O{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Reckeweg, Olaf; DiSalvo, Francis J. [Cornell Univ., Ithaca, NY (United States). Dept. of Chemistry and Chemical Biology


    A few black, rectangular thin plates of Ca{sub 21}SrSi{sub 24}O{sub 2} were obtained by serendipity in a solid-state reaction of calcium metal, strontium chloride and silicon powder at 1200 K for 2 days designed to produce 'Ca{sub 2}SrCl{sub 2}[Si{sub 3}]'. The title compound forms next to some CaSi and some remaining educts. Ca{sub 21}SrSi{sub 24}O{sub 2} crystallizes in the monoclinic space group C2/m (no. 12) with unit cell parameters of a=1895.2(2), b=450.63(5) and c=1397.33(18) pm and β=112.008(7) (Z=1). The title compound shows planar, eight-membered, kinked Si{sub 8} chains with Si-Si distances between 241.4 and 245.0 pm indicating bonding interactions and kinked 'rope ladders' connecting the chains with interatomic Si-Si distances in the range 268.1-274.7 pm. Embedded in between these silicon substructures are columns of oxygen centered, apex sharing [(Ca{sub 1-x} Sr{sub x}){sub 6/2}O] octahedra and calcium ions.

  4. Anti-L1CAM radioimmunotherapy is more effective with the radiolanthanide terbium-161 compared to lutetium-177 in an ovarian cancer model

    Energy Technology Data Exchange (ETDEWEB)

    Gruenberg, Juergen; Lindenblatt, Dennis; Cohrs, Susan; Fischer, Eliane [Paul Scherrer Institute, Center for Radiopharmaceutical Sciences ETH-PSI-USZ, Villigen (Switzerland); Dorrer, Holger [Paul Scherrer Institute, Laboratory of Radiochemistry and Environmental Chemistry, Villigen (Switzerland); Zhernosekov, Konstantin [ITG Isotope Technologies Garching GmbH, Garching (Germany); Koester, Ulli [Institut Laue-Langevin, Grenoble (France); Tuerler, Andreas [Paul Scherrer Institute, Laboratory of Radiochemistry and Environmental Chemistry, Villigen (Switzerland); University of Bern, Department of Chemistry and Biochemistry, Berne (Switzerland); Schibli, Roger [Paul Scherrer Institute, Center for Radiopharmaceutical Sciences ETH-PSI-USZ, Villigen (Switzerland); ETH Zurich, Department of Chemistry and Applied Biosciences, Zurich (Switzerland)


    The L1 cell adhesion molecule (L1CAM) is considered a valuable target for therapeutic intervention in different types of cancer. Recent studies have shown that anti-L1CAM radioimmunotherapy (RIT) with {sup 67}Cu- and {sup 177}Lu-labelled internalising monoclonal antibody (mAb) chCE7 was effective in the treatment of human ovarian cancer xenografts. In this study, we directly compared the therapeutic efficacy of anti-L1CAM RIT against human ovarian cancer under equitoxic conditions with the radiolanthanide {sup 177}Lu and the potential alternative {sup 161}Tb in an ovarian cancer therapy model. Tb was produced by neutron bombardment of enriched {sup 160}Gd targets. {sup 161}Tb and {sup 177}Lu were used for radiolabelling of DOTA-conjugated antibodies. The in vivo behaviour of the radioimmunoconjugates (RICs) was assessed in IGROV1 tumour-bearing nude mice using biodistribution experiments and SPECT/CT imaging. After ascertaining the maximal tolerated doses (MTD) the therapeutic impact of 50 % MTD of {sup 177}Lu- and {sup 161}Tb-DOTA-chCE7 was evaluated in groups of ten mice by monitoring the tumour size of subcutaneous IGROV1 tumours. The average number of DOTA ligands per antibody was 2.5 and maximum specific activities of 600 MBq/mg were achieved under identical radiolabelling conditions. RICs were stable in human plasma for at least 48 h. {sup 177}Lu- and {sup 161}Tb-DOTA-chCE7 showed high tumour uptake (37.8-39.0 %IA/g, 144 h p.i.) with low levels in off-target organs. SPECT/CT images confirmed the biodistribution data. {sup 161}Tb-labelled chCE7 revealed a higher radiotoxicity in nude mice (MTD: 10 MBq) than the {sup 177}Lu-labelled counterpart (MTD: 12 MBq). In a comparative therapy study with equitoxic doses, tumour growth inhibition was better by 82.6 % for the {sup 161}Tb-DOTA-chCE7 than the {sup 177}Lu-DOTA-chCE7 RIT. Our study is the first to show that anti-L1CAM {sup 161}Tb RIT is more effective compared to {sup 177}Lu RIT in ovarian cancer xenografts. These results suggest that {sup 161}Tb is a promising candidate for future clinical applications in combination with internalising antibodies. (orig.)

  5. CCDC 954774: Experimental Crystal Structure Determination : Dimethylammonium tri-terbium tris(4'-(tetrazol-2-id-5-yl)biphenyl-4-carboxylate) tetrahydroxide trihydrate unknown solvate

    KAUST Repository

    Xue, Dongxu


    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  6. CCDC 959634: Experimental Crystal Structure Determination : octakis(mu~3~-Hydroxo)-undecakis(mu~2~-2-fluorobenzoato)-(N,N-dimethylformamide)-nitrato-hexa-aqua-hexa-terbium

    KAUST Repository

    Guillerm, Vincent


    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  7. CCDC 954773: Experimental Crystal Structure Determination : Dimethylammonium tri-terbium tris(4-(tetrazol-2-id-5-yl)benzoate) tetrahydroxide trihydrate unknown solvate

    KAUST Repository

    Xue, Dongxu


    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  8. CCDC 954775: Experimental Crystal Structure Determination : Dimethylammonium tri-terbium tris(2-fluoro-4-(1H-tetrazol-5-yl)benzoate) tetrahydroxide tetradecahydrate

    KAUST Repository

    Xue, Dongxu


    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  9. CCDC 1411423: Experimental Crystal Structure Determination : catena-[dimethylammonium hexakis(mu-fumarato)-octakis(mu-hydroxo)-hexa-terbium N,N-dimethylformamide solvate hexahydrate

    KAUST Repository

    Assen, Ayalew H.


    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  10. CCDC 1410946: Experimental Crystal Structure Determination : catena-[dimethylammonium tris(mu-naphthalene-1,4-dicarboxylato)-tetrakis(mu-hydroxo)-triaqua-tri-terbium(iii) unknown solvate

    KAUST Repository

    Xue, Dongxu


    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  11. Phthalimides: Supramolecular Interactions in Crystals, Hypersensitive Solution 1H-NMR Dynamics and Energy Transfer to Europium(III and Terbium(III States

    Directory of Open Access Journals (Sweden)

    David J. Williams


    Full Text Available Detailed crystal structures and 1H-NMR characteristics of some alkylaminephthalimides, including dendritic polyphthalimides, are reported. These investigations were undertaken in order to obtain a better understanding of the relationship between solid-state supramolecular interactions, their persistence in solution and associated dynamics of magnetically hypersensitive phthalimide aromatic AA'BB'-AA'XX' proton NMR resonances. Some alkylamine phthalimides feature folded molecular geometries, which we attribute to n-π interactions among proximal amine-phthalimide sites; those alkylamine-phthalimides that have no possibility for such interactions feature fully extended phthalimide functionalities. Accordingly, alkylamine phthalimide compounds with folded solid-state geometries feature solvent and temperature dependent hypersensitive AA'BB'-AA'XX' 1H-NMR line profiles, which we attribute to the n-π interactions. Luminescence of Eu3+(5D0 and Tb3+(5D4 states show well defined metal ion environments in their complexes with dendritic phthalimides, as well as relatively weak phthalimide-lanthanide(III interactions.

  12. Analysis of tryptophan at nmoll(-1) level based on the fluorescence enhancement of terbium-gadolinium-tryptophan-sodium dodecyl benzene sulfonate system. (United States)

    Liu, Shufang; Yang, Jinghe; Wu, Xia; Su, Benyu; Sun, Changxia; Wang, Feng


    It is found that Tb(3+) can react with tryptophan (Trp) and sodium dodecyl benzene sulfonate (SDBS), and emits the intrinsic fluoresence of Tb(3+). The fluorescence intensity can be enhanced by La(3+), Gd(3+), Lu(3+), Sc(3+) and Y(3+), among which Gd(3+) has the greatest enhancement. This is a new co-luminescence system. The studies indicate that in the Tb-Gd-Trp-SDBS system, there is both Tb-Trp-SDBS and Gd-Trp-SDBS complexes, and they aggregate together and form a large congeries. The fluorescence enhancement of the Tb-Gd-Trp-SDBS system is considered to originate from intramolecular and intermolecular energy transfers, and the energy-insulating sheath effect of Gd-Trp-SDBS complex. Under the optimum conditions, the enhanced intensity of fluorescence is in proportion to the concentration of Trp in the range from 4x10(-8) to 4x10(-5)moll(-1). The detection limit is 10(-9)moll(-1). The proposed method is one of the most sensitive fluoremetries of Trp.

  13. Preparation, characterization, and properties of PMMA-doped polymer film materials: a study on the effect of terbium ions on luminescence and lifetime enhancement. (United States)

    Zhang, Hui-Jie; Fan, Rui-Qing; Wang, Xin-Ming; Wang, Ping; Wang, Yu-Lei; Yang, Yu-Lin


    Poly(methylmethacrylate) (PMMA) doped with Tb-based imidazole derivative coordination polymer {[Tb(3)(L)(μ(3)-OH)(7)]·H(2)O}(n) (1) (L = N,N'-bis(acetoxy)biimidazole) was synthesized and its photophysical properties were studied. The L'(L' = N,N'-bis(ethylacetate)biimidazole) ligand was synthesized by an N-alkylation reaction process followed by ester hydrolysis to produce ligand L. Polymer 1 and ligand L' have been characterized by (1)H NMR and IR spectroscopy, elemental analysis, PXRD and X-ray single-crystal diffraction. Coordination polymer 1 is the first observation of a CdCl(2) structure constructed with hydroxy groups and decorated by ligand L in lanthanide N-heterocyclic coordination polymers. In the 2D layered structure of 1, each Tb3 metal center is connected with three Tb1 and three Tb2 metal centers by seven hydroxyl groups in different directions, resulting in a six-membered ring. After doping, not only the luminescence intensity and lifetime enhanced, but also their thermal stability was increased in comparison with 1. When 1 was doped into poly(methylmethacrylate) (1@PMMA), polymer film materials were formed with the PMMA polymer matrix (w/w = 2.5%-12.5%) acting as a co-sensitizer for Tb(3+) ions. The luminescence intensity of the Tb(3+) emission at 544 nm increases when the content of Tb(3+) was 10%. The lifetime of 1@PMMA (914.88 μs) is more than four times longer than that of 1 (196.24 μs). All τ values for the doped polymer systems are higher than coordination polymer 1, indicating that radiative processes are operative in all the doped polymer films. This is because PMMA coupling with the O-H oscillators from {[Tb(3)(L)(μ(3)-OH)(7)]·H(2)O}(n) can suppress multiphonon relaxation. According to the variable-temperature luminescence (VT-luminescence) investigation, 1@PMMA was confirmed to be a stable green luminescent polymer film material.

  14. Changing Single-Molecule Magnet Properties of a Windmill-Like Distorted Terbium(III) α-Butoxy-Substituted Phthalocyaninato Double-Decker Complex by Protonation/Deprotonation. (United States)

    Horii, Yoji; Horie, Yusuke; Katoh, Keiichi; Breedlove, Brian K; Yamashita, Masahiro


    Synthesis, structures, and magnetic properties of α-butoxy-substituted phthalocyaninato double-decker complexes Tb(α-obPc)2 (1-) (α-obPc: dianion of 1,4,8,11,15,18,22,25-octa(n-butoxy)phthalocyaninato) with protonated (1H), deprotonated (1[HDBU]), and diprotonated forms (1H2+) are discussed. X-ray analysis was used to confirm the position of the proton in 1H, and it was revealed that the protonation induced asymmetric distortion in 1H. In contrast, 1[HDBU] was distorted in a highly symmetric windmill-like fashion. 1H is arranged in a slipped column array in the crystal packing, whereas 1[HDBU] is arranged in a one-dimensional fashion, in which the magnetic easy axes of 1[HDBU] lie along the same line. From direct-current (dc) magnetic measurements, ferromagnetic Tb-Tb interactions occur in both 1H and 1[HDBU], and magnetic hysteresis was observed. However, the area of the magnetic hysteresis in 1[HDBU] is larger than that in 1H, meaning that magnetic relaxation time (τ) is longer in 1[HDBU]. In addition, the results of alternating-current magnetic measurements in a zero dc magnetic field indicate that τ of 1[HDBU] is longer as compared to 1H. In other words, protonation/deprotonation affects not only the molecular structures and crystal packing but also the single-molecule magnet properties.

  15. A Water-Stable Dual-Channel Luminescence Sensor for UO22+Ions Based on an Anionic Terbium(III) Metal-Organic Framework. (United States)

    Ye, Junwei; Bogale, Raji F; Shi, Yangwei; Chen, Yanzhen; Liu, Xigang; Zhang, Siqi; Yang, Yaoyao; Zhao, Jianzhang; Ning, Guiling


    A stable 3D Tb III -based metal-organic framework [Tb(BPDC) 2 ]⋅(CH 3 ) 2 NH 2 (DUT-101) was synthesized, and it is the first efficient dual-channel luminescence sensor for aqueous UO 2 2+ ions. DUT-101 contains an anionic three-dimensional framework and protonated dimethylamine molecules embedded within the channels. The intense green emission of DUT-101 could be highly selectively and sensitively quenched by UO 2 2+ ions even in the presence of other competing metal ions. A possible sensing mechanism was proposed based on both suppression of luminescence resonance energy transfer and enhancement of intermolecular electron transfer. Furthermore, visual green fluorescent test papers based on DUT-101 were fabricated and could be used to discriminate UO 2 2+ ions among various metal ions. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. [?-N,N?-Bis(3-meth?oxy-2-oxidobenzyl?idene)propane-1,3-diamine]trinitratocopper(II)terbium(III) acetone solvate


    Zhang Fang; Liu Fei


    In the title complex, [CuTb(C19H20N2O4)(NO3)3]·CH3COCH3, the CuII atom is four-coordinated by two O atoms and two N atoms from the deprotonated Schiff base in a square-planar geometry, while the TbIII atom is ten-coordinated by four O atoms from the deprotonated Schiff base and six O atoms from three bidentate nitrate anions. The compound is isostructural with the previously reported GdIII analogue [Elmali & Elerman (2004). Z. Naturforsch. Teil B, 59, 535–540], which was described ...

  17. Crystal structure of a mixed-ligand terbium(III coordination polymer containing oxalate and formate ligands, having a three-dimensional fcu topology

    Directory of Open Access Journals (Sweden)

    Chainok Kittipong


    Full Text Available The title compound, poly[(μ3-formato(μ4-oxalatoterbium(III], [Tb(CHO2(C2O4]n, is a three-dimensional coordination polymer, and is isotypic with the LaIII, CeIII and SmIII analogues. The asymmetric unit contains one TbIII ion, one formate anion (CHO2− and half of an oxalate anion (C2O42−, the latter being completed by application of inversion symmetry. The TbIII ion is nine-coordinated in a distorted tricapped trigonal–prismatic manner by two chelating carboxylate groups from two C2O42− ligands, two carboxylate oxygen atoms from another two C2O42− ligands and three oxygen atoms from three CHO2− ligands, with the Tb—O bond lengths and the O—Tb—O bond angles ranging from 2.4165 (19 to 2.478 (3 Å and 64.53 (6 to 144.49 (4°, respectively. The CHO2− and C2O42− anions adopt μ3-bridging and μ4-chelating-bridging coordination modes, respectively, linking adjacent TbIII ions into a three-dimensional 12-connected fcu topology with point symbol (324.436.56. The title compound exhibits thermal stability up to 623 K, and also displays strong green photoluminescence in the solid state at room temperature.

  18. Current–voltage studies on β-FeSi2/Si heterojunction

    Indian Academy of Sciences (India)

    later treated by pulsed laser. Temperature of thermal annealing and diode area ... Silicide; semiconducting silicide; heterojunction; pulsed laser; I–V characteristics. 1. Introduction β-FeSi2 is a semiconducting silicide .... region and the electric field due to ionized impurities in Si yields a current in the opposite direction to that ...

  19. CCDC 1410822: Experimental Crystal Structure Determination : heptakis(dimethylammonium) dodecakis(mu-hydroxo)-bis(mu-oxo)-nonaaqua-nona-terbium tris(octakis(mu-hydroxo)-triaqua-bis(2-fluorobenzoato)-bis(formato)-hexa-terbium) dodecakis(5-[(4-carboxylatophenyl)methoxy]benzene-1,3-dicarboxylate) unknown solvate

    KAUST Repository

    Alezi, Dalal


    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.



  1. FY 1998 annual report on the improvement of toughness of silicide-based intermetallic compounds by controlling their composite structures; 1998 nendo fukugo soshikika ni yoru shirisaidokei kinzokukan kagobutsu no kyojinsei kaizen chosa hokokusho

    Energy Technology Data Exchange (ETDEWEB)



    Intermetallic compounds, although attracting much attention as most promising materials serviceable at superhigh temperature, are very fragile at normal temperature, which is one of their major disadvantages. Structures of these compounds prepared by the melting method are controlled to improve their toughness by, e.g., changing phase ratio of the initial crystal for the Mo-Si-Nb system to prevent cracking during the melting and casting stages, addition of a third element (e.g., Zr, Ti or Hf) or a mixed component of Nb and Zr to control the structure of Mo{sub 5}Si{sub 3} considered to be a cause for the cracking, and controlling melting and solidification rates for the FZ melting method. The three-phase microstructures with added Hf or Zr show improved toughness, but need additional procedures for controlling solidification and cooling conditions. For the powder method, the MA conditions are investigated with a two-element system, and the effects of Al or Zr as the third element added to the base composition on the composite microstructures and constituent phases are also investigated. Unlike the melting method, the powder method causes no cracking problems during the stock preparation stage and hence is expected to be applicable to production of larger stocks. However, the products by this method are found to be insufficient both in toughness and high-temperature strength. It is necessary to develop methods for cutting down and controlling oxides in the grain boundaries, in order to prevent deterioration of their strength at high temperature. (NEDO)

  2. A validated spectrofluorimetric method for the determination of citalopram in bulk and pharmaceutical preparations based on the measurement of the silver nanoparticles-enhanced fluorescence of citalopram/terbium complexes. (United States)

    Khan, Muhammad Naeem; Shah, Jasmin; Jan, Muhammad Rasul; Lee, Sang Hak


    A simple, sensitive, and accurate spectrofluorimetric method was developed for the determination of citalopram in bulk and pharmaceutical preparations. The method is based on the enhancement of the weak fluorescence signal (FL) of the Tb (III)-citalopram system in the presence of silver nanoparticles. Fluorescence intensities were measured at 555 nm after excitation at 281 nm. Prepared silver nanoparticles (AgNPs) were characterized by UV-Visible spectra and transmission electron microscopy (TEM). Various factors affecting the formation of citalopram-Tb (III)-AgNPs complexes were studied and optimized. The fluorescence intensity versus concentration plot was linear over the range 0.02-14 μg mL(-1), with an excellent correlation coefficient of 0.9978. The limit of detection (LOD) and limit of quantification (LOQ) were found to be 7.15 × 10(-6) μg mL(-1) and 2.38 × 10(-5) μg mL(-1) respectively. The proposed method was found to have good reproducibility with a relative standard deviation of 3.66% (n = 6). The interference effects of common excipients found in pharmaceutical preparations were studied. The developed method was validated statistically by performing recoveries studies and successfully applied for the assay of citalopram in bulk powder and pharmaceutical preparations. Percent recoveries were found to range from 98.98% to 100.97% for bulk powder and from 96.57% to 101.77% for pharmaceutical preparations.

  3. A "plug-and-play" approach to the preparation of transparent luminescent hybrid materials based on poly(methyl methacrylate), a calix[4]arene cross-linking agent, and terbium ions. (United States)

    Driscoll, Christopher R; Reid, Brodie L; McIldowie, Matthew J; Muzzioli, Sara; Nealon, Gareth L; Skelton, Brian W; Stagni, Stefano; Brown, David H; Massi, Massimiliano; Ogden, Mark I


    A novel methodology to prepare transparent luminescent hybrid materials is reported. Using a calixarene ionophore as a PMMA cross-linker avoids problems, such as phase segregation, and produces a polymer monolith that can be loaded with the metal ion required for luminescence post-synthesis. This approach is versatile and will simplify the production of such materials.

  4. CCDC 954772: Experimental Crystal Structure Determination : catena-(Dimethylammonium tris(mu~4~-3-fluorobiphenyl-4,4'-dicarboxylato)-tetrakis(mu~3~-hydroxo)-triaqua-tri-terbium unknown solvate)

    KAUST Repository

    Xue, Dongxu


    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  5. CCDC 1410820: Experimental Crystal Structure Determination : heptakis(dimethylammonium) heptacosa-terbium dodecakis((1,1'-biphenyl)-3,4',5-tricarboxylate) hexakis(2-fluorobenzoate) hexakis(formate) hexatriacontakis(hydroxide) bis(oxide) unknown solvate hydrate

    KAUST Repository

    Alezi, Dalal


    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  6. Terbium doped SnO2 nanoparticles as white emitters and SnO2:5Tb/Fe3O4 magnetic luminescent nanohybrids for hyperthermia application and biocompatibility with HeLa cancer cells. (United States)

    Singh, Laishram Priyobarta; Singh, Ningthoujam Premananda; Srivastava, Sri Krishna


    SnO2:5Tb (SnO2 doped with 5 at% Tb(3+)) nanoparticles were synthesised by a polyol method and their luminescence properties at different annealing temperatures were studied. Characterization of nanomaterials was done by X-ray diffraction (XRD), Fourier transformation infrared spectroscopy (FTIR), transmission electron microscopy (TEM) and vibrating sample magnetometry (VSM). XRD studies indicate that the prepared nanoparticles were of tetragonal structures. Upon Tb(3+) ion incorporation into SnO2, Sn(4+) changes to Sn(2+) and, on annealing again at higher temperature, Sn(2+) changes to Sn(4+). The prepared nanoparticles were spherical in shape. Sn-O vibrations were found from the FTIR studies. In photoluminescence studies, the intensity of the emission peaks of Tb(3+) ions increases with the increase of annealing temperature, and emission spectra lie in the region of white emission in the CIE diagram. CCT calculations show that the SnO2:5Tb emission lies in cold white emission. Quantum yields up to 38% can be obtained for 900 °C annealed samples. SnO2:5Tb nanoparticles were well incorporated into the PVA polymer and such a material incorporated into the polymer can be used for display devices. The SnO2:5Tb/Fe3O4 nanohybrid was prepared and investigated for hyperthermia applications at different concentrations of the nanohybrid. This achieves a hyperthermia temperature (42 °C) under an AC magnetic field. The hybrid nanomaterial SnO2:5Tb/Fe3O4 was found to exhibit biocompatibility with HeLa cells (human cervical cancer cells) at concentrations up to 74% for 100 μg L(-1). Also, this nanohybrid shows green emission and thus it will be helpful in tracing magnetic nanoparticles through optical imaging in vivo and in vitro application.

  7. Filmes delgados luminescentes obtidos a partir de hidroxicarbonatos de ítrio ativados por európio ou térbio Luminescent thin films obtained from ytrium hydroxycarbonates activated by terbium or europium

    Directory of Open Access Journals (Sweden)

    Emy Niyama


    Full Text Available These films were obtained by dip coating. Parameters like dislocation velocity; number of deposits, suspension concentration, and number of deposits followed or not by heat treatment between each deposit and calcination temperature were evaluated for establishing the best homogeneity. The obtained films were characterized in terms of their morphology, optical quality and photoluminescence by scanning electron microscopy (SEM, UV-vis absorption spectrophotometry and luminescence spectroscopy, respectively. The morphologic and luminescent characteristics showed dip coating as good laboratory technique for development of thin films for optical applications.

  8. Thermophysical Properties of Matter - the TPRC Data Series. Volume 5. Specific Heat - Nonmetallic Solids (United States)


    Chlorotrifluoromethane (see Freon 13) comide) Chloroform (CHC13) 6 166 Chromium silicides: Chloromethane (see Methyl chloride) CrSi 5 565 Chromel A (see Nichrome...V) CrS 2 5 568 Chromel P 4 392 Cr3Si 5 559 Chromium 4 44 Cr 5 Si 3 5 562 Chromium + Aluninum 4 304 Chromium silicide ( CrSi ) 5 565 Chronium i

  9. Page 1 a i. Bull. Mater. Sci., Vol. 22, No. 3, May 1999, pp. 391-397 ...

    Indian Academy of Sciences (India)

    the amorphous layer. As a result, the average grain size of C49-TiSi, is smaller which leads to lower C49- to C54-TiSi, transformation temperature. Keywords. TiSi; stress; high temperature sputtering. 1. Introduction. For self-aligned silicidation process silicides are formed on source, drain and gate regions simultaneously to ...

  10. Influence of P and As implantation of the formation of MoSi2 (United States)

    van Ommen, A. H.; Wolters, R. A. M.


    Molybdenum disilicide films have been formed by a reaction of Mo with polycrystalline silicon. Implantation of phosphorus or arsenic prior to reaction has been shown to have a large effect on the silicidation process. The object of implantation was to enhance the silicide reaction by creating damage at the metal-silicon interface. This, then, results in silicide films with less surface roughness (and a lower electrical resistivity). Molecular P+2 ions were found to be more effective in creating damage than single P+ ions, due to the fact that for P+2 ions two simultaneous collision cascades occur which overlap. Apart from the beneficial effect of implantation damage, the introduction of phosphorus has a deleterious effect on the properties of the silicide films. This phenomenon is explained by the presence of a thin and nonuniform native oxide layer which hinders the silicide reaction. Without addition of phosphorus, new nuclei for the silicide reaction can be formed due to stress introduced by the formation of the silicide, which will act upon the oxide and cause it to break up at some weak spot. The effect of phosphorus is proposed to be that it renders the oxide more viscous which prevents this process from taking place. The x-ray diffraction spectra revealed that the orientation of the grains in the polycrystalline MoSi2 films is influenced by the method of preparation.

  11. Synthesis and characterization of spherical Tb-MCM-41

    Energy Technology Data Exchange (ETDEWEB)

    Pires, Luiza H.O., E-mail: [Universidade Federal do Para, Instituto de Ciencias Exatas e Naturais, Laboratorio de Catalise e Oleoquimica, CP 479, CEP 66075-110, Belem, PA (Brazil); Queiroz, Renan M.; Souza, Ruth P.; Costa, Carlos E.F. da; Zamian, Jose R. [Universidade Federal do Para, Instituto de Ciencias Exatas e Naturais, Laboratorio de Catalise e Oleoquimica, CP 479, CEP 66075-110, Belem, PA (Brazil); Weber, Ingrid T. [Universidade Federal de Pernambuco, Centro de Ciencias Exatas e da Natureza, Av. Prof. Luis Barros Freire, s/n, Cidade Universitaria, 50670-901 Recife, PE (Brazil); Filho, Geraldo N. da Rocha [Universidade Federal do Para, Instituto de Ciencias Exatas e Naturais, Laboratorio de Catalise e Oleoquimica, CP 479, CEP 66075-110, Belem, PA (Brazil)


    Spherical MCM-41 was synthesized at room temperature and functionalized by means of direct synthesis method. Evidence for the terbium presence in the silica matrix was obtained by means of EDX. Scanning electron microscopy (SEM) micrographs showed that terbium incorporation did not change significantly MCM-41 morphology. The maintenance of the hexagonal structure was confirmed by X-ray diffraction (XRD) pattern analysis. The cell parameter increase and the surface area decrease, observed by N{sub 2} adsorption-desorption technique, were taken as evidence of terbium introduction inside the MCM-41 framework. By FT-IR spectra it was found that the main features of the silica framework were maintained. The presence of a strong absorption band centered at ca. 220 nm in the diffuse reflectance UV-vis spectra could indicate the presence of tetra-coordinated terbium in the silica network of Tb-MCM-41 samples.

  12. Therapeutic use of radioactive isotopes

    CERN Multimedia

    Caroline Duc


    In December, researchers from ISOLDE-CERN, the Paul Scherrer Institute (PSI) and the Institut Laue-Langevin (ILL) published the results of an in vivo study which successfully proved the effectiveness of four terbium isotopes for diagnosing and treating cancerous tumours.   Four terbium isotopes suitable for clinical purposes. “ISOLDE is the only installation capable of supplying terbium isotopes of such purity and intensity in the case of three out of the four types used in this study,” explains Karl Johnson, a physicist at ISOLDE.  “Producing over a thousand different isotopes, our equipment offers the widest choice of isotopes in the world!” Initially intended for fundamental physics research, ISOLDE has diversified its activities over time to invest in various projects in the materials science, biochemistry and nuclear medicine fields. The proof-of-concept study has confirmed that the four terbium isotopes 149Tb, 152Tb, 155Tb produ...

  13. Thermal History Using Microparticle Trap Luminescence (United States)


    and thermoluminescence of terbium-activated silicates and aluminates " . Radiat. Meas. 43, 323-326 (2008). HDTRA1-07-1-0016 University of...of terbium-activated silicates and aluminates " . 15th Solid State Dosimetry Conference, Delft, The Netherlands, July 8-13 (2007). 2 INTRODUCTION...increased to 500°C until combustion occurred (- 7 min). The remaining powder was collected, crushed in a agate mortar, and annealed (typically at 900

  14. Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

    National Research Council Canada - National Science Library

    Noor Faizah, Z.A; Ahmad, Ibrahim; Ker, P.J; Siti Munirah, Y; Mohd Firdaus, R; Md. Fazle, E; Menon, P. S


    ... (WSi2) and Titanium Silicide (TiSi2) as a metal gate for NMOS and PMOS respectively. The devices are fabricated virtually using ATHENA module and characterized its performance evaluation via ATLAS module...

  15. On the microstructure and interfacial properties of sputtered nickel ...

    Indian Academy of Sciences (India)

    SEM) and atomic force microscope (AFM) revealed columnar morphology with voided boundaries for films deposited at room temperature and was retained after post-deposition annealing at higher temperatures. Nickel silicide formation with ...

  16. Advanced Materials and Manufacturing for Low-Cost, High-Performance Liquid Rocket Combustion Chambers Project (United States)

    National Aeronautics and Space Administration — Silicided niobium alloy (C103) combustion chambers have been used extensively in both NASA and DoD liquid rocket propulsion systems. Niobium alloys offer a good...



  18. Lightweight Ultrahigh Temperature CMC-Lined C/C Combustion Chambers Project (United States)

    National Aeronautics and Space Administration — NASA and DoD are seeking economical and high-performance bipropellant thrusters for various applications. These goals cannot be achieved using the silicided C103...

  19. Advanced Materials and Manufacturing for Low-Cost, High-Performance Liquid Rocket Combustion Chambers, Phase II Project (United States)

    National Aeronautics and Space Administration — Silicided niobium alloy (C103) combustion chambers have been used extensively in both NASA and DoD liquid rocket propulsion systems. Niobium alloys offer a good...

  20. Electronic and chemical structure of metal-silicon interfaces (United States)

    Grunthaner, P. J.; Grunthaner, F. J.


    This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using X-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.

  1. Metallization of Large Silicon Wafers (United States)

    Pryor, R. A.


    A metallization scheme was developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300 C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed.

  2. Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing (United States)

    Kal, S.; Kasko, I.; Ryssel, H.


    The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

  3. On the quenching of trivalent terbium luminescence by ligand low lying triplet state energy and the role of the {sup 7}F{sub 5} level: The [Tb(tta){sub 3} (H{sub 2}O){sub 2}] case

    Energy Technology Data Exchange (ETDEWEB)

    Souza, A.S., E-mail: [Departamento de Química Fundamental, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Nunes, L.A. [Instituto de Física de São Carlos, Universidade de São Paulo, 13560-970 São Carlos, SP (Brazil); Felinto, M.C.F.C. [Instituto de Pesquisas Energéticas e Nucleares-IPEN, 05505-800 São Paulo, SP (Brazil); Brito, H.F. [Instituto de Química, Universidade de São Paulo, 05508-900 São Paulo, SP (Brazil); Malta, O.L. [Departamento de Química Fundamental, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil)


    In this work we discuss the observed Tb{sup 3+} ion luminescence quenching, due to the relative ligand low lying triplet state energy, in the [Tb(tta){sub 3} (H{sub 2}O){sub 2}] compound at low and room temperature (tta=thenoyltrifluoroacetonate). Theoretical energy transfer rates, for both multipolar and exchange mechanisms, were calculated and discussed on the basis of selection rules and energy mismatch conditions from the [Tb(tta){sub 3} (H{sub 2}O){sub 2}] emission spectra. We have concluded that the exchange mechanism by far dominates, in the present case, and that the long first excited state {sup 7}F{sub 5} lifetime (in the millisecond scale) plays a crucial role in the Tb{sup 3+} luminescence quenching. - Highlights: • The energy exchange between the ligand T{sub 1} and Tb{sup 3+5}D{sub 4} levels occur by the exchange interaction. • The Tb{sup 3+} first excited {sup 7}F{sub 5} level plays a crucial role in this process due to its long lifetime. • At room temperature the energy exchanged between the {sup 5}D{sub 4} level of the Tb{sup 3+} ion and the T{sub 1} of the ligand is lost via the intersystem crossing T{sub 1} → S{sub 0} channel.

  4. Synthesis, structure, and magnetic properties of a new family of tetra-nuclear {Mn2(III)Ln2}(Ln = Dy, Gd, Tb, Ho) clusters with an arch-type topology: single-molecule magnetism behavior in the dysprosium and terbium analogues. (United States)

    Chandrasekhar, Vadapalli; Bag, Prasenjit; Speldrich, Manfred; van Leusen, Jan; Kögerler, Paul


    Sequential reaction of Mn(II) and lanthanide(III) salts with a new multidentate ligand, 2,2'-(2-hydroxy-3-methoxy-5-methylbenzylazanediyl)diethanol (LH3), containing two flexible ethanolic arms, one phenolic oxygen, and a methoxy group afforded heterometallic tetranuclear complexes [Mn2Dy2(LH)4(μ-OAc)2](NO3)2·2CH3OH·3H2O (1), [Mn2Gd2(LH)4(μ-OAc)2](NO3)2·2CH3OH·3H2O (2), [Mn2Tb2(LH)4(μ-OAc)2](NO3)2·2H2O·2CH3OH·Et2O (3), and [Mn2Ho2(LH)4(μ-OAc)2]Cl2·5CH3OH (4). All of these dicationic complexes possess an arch-like structural topology containing a central Mn(III)-Ln-Ln-Mn(III) core. The two central lanthanide ions are connected via two phenolate oxygen atoms. The remaining ligand manifold assists in linking the central lanthanide ions with the peripheral Mn(III) ions. Four doubly deprotonated LH(2-) chelating ligands are involved in stabilizing the tetranuclear assembly. A magnetochemical analysis reveals that single-ion effects dominate the observed susceptibility data for all compounds, with comparably weak Ln···Ln and very weak Ln···Mn(III) couplings. The axial, approximately square-antiprismatic coordination environment of the Ln(3+) ions in 1-4 causes pronounced zero-field splitting for Tb(3+), Dy(3+), and Ho(3+). For 1 and 3, the onset of a slowing down of the magnetic relaxation was observed at temperatures below approximately 5 K (1) and 13 K (3) in frequency-dependent alternating current (AC) susceptibility measurements, yielding effective relaxation energy barriers of ΔE = 16.8 cm(-1) (1) and 33.8 cm(-1) (3).

  5. Reactive Chemical Vapor Deposition Method as New Approach for Obtaining Electroluminescent Thin Film Materials

    Directory of Open Access Journals (Sweden)

    Valentina V. Utochnikova


    Full Text Available The new reactive chemical vapor deposition (RCVD method has been proposed for thin film deposition of luminescent nonvolatile lanthanide aromatic carboxylates. This method is based on metathesis reaction between the vapors of volatile lanthanide dipivaloylmethanate (Ln(dpm3 and carboxylic acid (HCarb orH2Carb′ and was successfully used in case of HCarb. Advantages of the method were demonstrated on example of terbium benzoate (Tb(bz3 and o-phenoxybenzoate thin films, and Tb(bz3 thin films were successfully examined in the OLED with the following structure glass/ITO/PEDOT:PSS/TPD/Tb(bz3/Ca/Al. Electroluminescence spectra of Tb(bz3 showed only typical luminescent bands, originated from transitions of the terbium ion. Method peculiarities for deposition of compounds of dibasic acids H2Carb′ are established on example of terbium and europium terephtalates and europium 2,6-naphtalenedicarboxylate.

  6. Organometallic Routes into the Nanorealms of Binary Fe-Si Phases (United States)

    Kolel-Veetil, Manoj K.; Keller, Teddy M.


    The Fe-Si binary system provides several iron silicides that have varied and exceptional material properties with applications in the electronic industry. The well known Fe-Si binary silicides are Fe3Si, Fe5Si3, FeSi, α-FeSi2 and β-FeSi2. While the iron-rich silicides Fe3Si and Fe5Si3 are known to be room temperature ferromagnets, the stoichiometric FeSi is the only known transition metal Kondo insulator. Furthermore, Fe5Si3 has also been demonstrated to exhibit giant magnetoresistance (GMR). The silicon-rich β-FeSi2 is a direct band gap material usable in light emitting diode (LED) applications. Typically, these silicides are synthesized by traditional solid-state reactions or by ion beam-induced mixing (IBM) of alternating metal and silicon layers. Alternatively, the utilization of organometallic compounds with reactive transition metal (Fe)-carbon bonds has opened various routes for the preparation of these silicides and the silicon-stabilized bcc- and fcc-Fe phases contained in the Fe-Si binary phase diagram. The unique interfacial interactions of carbon with the Fe and Si components have resulted in the preferential formation of nanoscale versions of these materials. This review will discuss such reactions.

  7. Organometallic Routes into the Nanorealms of Binary Fe-Si Phases

    Directory of Open Access Journals (Sweden)

    Teddy M. Keller


    Full Text Available The Fe-Si binary system provides several iron silicides that have varied and exceptional material properties with applications in the electronic industry. The well known Fe-Si binary silicides are Fe3Si, Fe5Si3, FeSi, a-FeSi2 and b-FeSi2. While the iron-rich silicides Fe3Si and Fe5Si3 are known to be room temperature ferromagnets, the stoichiometric FeSi is the only known transition metal Kondo insulator. Furthermore, Fe5Si3 has also been demonstrated to exhibit giant magnetoresistance (GMR. The silicon-rich b-FeSi2 is a direct band gap material usable in light emitting diode (LED applications. Typically, these silicides are synthesized by traditional solid-state reactions or by ion beam-induced mixing (IBM of alternating metal and silicon layers. Alternatively, the utilization of organometallic compounds with reactive transition metal (Fe-carbon bonds has opened various routes for the preparation of these silicides and the silicon-stabilized bcc- and fcc-Fe phases contained in the Fe-Si binary phase diagram. The unique interfacial interactions of carbon with the Fe and Si components have resulted in the preferential formation of nanoscale versions of these materials. This review will discuss such reactions.

  8. Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling


    Noor Faizah Z.A.; Ahmad Ibrahim; Ker P.J.; Siti Munirah Y.; Mohd Firdaus R.; Md. Fazle E.; Menon P. S.


    This paper presents the modeling and optimization of 14nm gate length CMOS transistor which is down-scaled from previous 32nm gate length. High-k metal gate material was used in this research utilizing Hafnium Dioxide (HfO2) as dielectric and Tungsten Silicide (WSi2) and Titanium Silicide (TiSi2) as a metal gate for NMOS and PMOS respectively. The devices are fabricated virtually using ATHENA module and characterized its performance evaluation via ATLAS module; both in Virtual Wafer Fabricati...

  9. Electronic structure of erbium suicide ultra-thin films (United States)

    Veuillen, J.-Y.; Tan, T. A. Nguyen; Lollman, D. B. B.


    The electronic structure of erbium silicide ultra-thin films epitaxially grown on Si(111) has been studied by means of angle-resolved ultra-violet photoemission spectroscopy (ARUPS) in the coverage range 0.2-4 monolayers (ML). Some peaks probably related to the silicide surface atomic structure are observed at any coverage. Features that appear at normal emission in connection with an R3 superstructure are ascribed to vacancy-induced states in the silicon surface plane. No true interface states could be identified in this study.

  10. Chemical bonding and charge redistribution - Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems (United States)

    Grunthaner, P. J.; Grunthaner, F. J.; Madhukar, A.


    Via a systematic study of the correlation between the core and valence level X-ray photoemission spectra, the nature of the chemical bonding and charge redistribution for bulk transition metal silicides has been examined. Particular emphasis is placed on Pt2Si and PtSi. It is observed that the strength of the metal (d)-silicon (p) interaction increases in the order Ni2Si, Pd2Si, Pt2Si. It is also observed that both the metal and silicon core lines shift to higher binding energy as the silicides are formed. The notion of charge redistribution for metallic bonds is invoked to explain these data.

  11. Spatial resolution in X-ray imaging with scintillating glass optical fiber plates (United States)

    Pavan, P.; Zanella, G.; Zannoni, R.; Marigo, A.


    Some scintillating optical fiber plates, fabricated with terbium glasses are tested for their intrinsic spatial resolution under X-ray irradiation and the result is compared with a typical phosphor screen. The spatial resolution (CTF and MTF) is measured as a function of spatial frequency and the standard deviation of the corresponding Gaussian PSF is derived.


    DEFF Research Database (Denmark)


    The present invention concerns a chemical process for preparing nanoparticles of an alloy comprising both a noble metal, such as platinum, and a non-noble transition or lanthanide metal, such as yttrium, gadolinium or terbium. The process is carried out by reduction with hydrogen and removal...

  13. Multiplet effects in the electronic structure of heavy rare-earth metals

    NARCIS (Netherlands)

    Lebegue, S.; Svane, A.; Katsnelson, M.I.; Lichtenstein, A.I.; Eriksson, O.


    The spectroscopic properties of elemental terbium, dysprosium, holmium, and erbium are investigated using first-principles calculations taking into account intra-atomic correlation effects. In order to describe the strongly localized f electrons together with the conduction bands, we have used the

  14. Performance of 20 Ci 137Cs γ-ray Compton spectrometer for the ...

    Indian Academy of Sciences (India)

    The in-house 137Cs spectrometer is very useful for the measurement of momentum densities of heavy materials. The performance of the machine is assessed using aluminum, terbium and mercury samples and the exper- imental data from comparable apparatus. Keywords. Compton scattering; electron momentum density; ...

  15. Author Details

    African Journals Online (AJOL)

    Pengkiliya, P. Vol 67 (2014) - Articles Interaction of 3-Hydroxypicolinamide with TbIII and its Sensitizing Effect on Terbium Luminescence as a Function of pH and Medium Abstract PDF. ISSN: 0379-4350. AJOL African Journals Online. HOW TO USE AJOL... for Researchers · for Librarians · for Authors · FAQ's · More about ...

  16. Author Details

    African Journals Online (AJOL)

    Devi, TP. Vol 67 (2014) - Articles Interaction of 3-Hydroxypicolinamide with TbIII and its Sensitizing Effect on Terbium Luminescence as a Function of pH and Medium Abstract PDF. ISSN: 0379-4350. AJOL African Journals Online. HOW TO USE AJOL... for Researchers · for Librarians · for Authors · FAQ's · More about AJOL ...

  17. THz near-field Faraday imaging in hybrid metamaterials

    NARCIS (Netherlands)

    Kumar, N.; Strikwerda, A.C.; Fan, K.; Zhang, X.; Averitt, R.D.; Planken, P.C.M.; Adam, A.J.L.


    We report on direct measurements of the magnetic near-field of metamaterial split ring resonators at terahertz frequencies using a magnetic field sensitive material. Specifically, planar split ring resonators are fabricated on a single magneto-optically active terbium gallium garnet crystal.

  18. Synthesis and photoluminescence properties of CaSixOy:Tb3+ phosphors prepared using solution-combustion method

    CSIR Research Space (South Africa)

    Dejene, FB


    Full Text Available to Ca3Si2O7 as the terbium concentration increase. Broad band excitations peaking between 280 - 360 nm derived from excited states of Tb3+ ions were observed for all powders grown from various Tb compositions. The green emission peak at 545 nm due...

  19. Scanning Electron Microscope-Cathodoluminescence Analysis of Rare-Earth Elements in Magnets. (United States)

    Imashuku, Susumu; Wagatsuma, Kazuaki; Kawai, Jun


    Scanning electron microscope-cathodoluminescence (SEM-CL) analysis was performed for neodymium-iron-boron (NdFeB) and samarium-cobalt (Sm-Co) magnets to analyze the rare-earth elements present in the magnets. We examined the advantages of SEM-CL analysis over conventional analytical methods such as SEM-energy-dispersive X-ray (EDX) spectroscopy and SEM-wavelength-dispersive X-ray (WDX) spectroscopy for elemental analysis of rare-earth elements in NdFeB magnets. Luminescence spectra of chloride compounds of elements in the magnets were measured by the SEM-CL method. Chloride compounds were obtained by the dropwise addition of hydrochloric acid on the magnets followed by drying in vacuum. Neodymium, praseodymium, terbium, and dysprosium were separately detected in the NdFeB magnets, and samarium was detected in the Sm-Co magnet by the SEM-CL method. In contrast, it was difficult to distinguish terbium and dysprosium in the NdFeB magnet with a dysprosium concentration of 1.05 wt% by conventional SEM-EDX analysis. Terbium with a concentration of 0.02 wt% in an NdFeB magnet was detected by SEM-CL analysis, but not by conventional SEM-WDX analysis. SEM-CL analysis is advantageous over conventional SEM-EDX and SEM-WDX analyses for detecting trace rare-earth elements in NdFeB magnets, particularly dysprosium and terbium.

  20. Performance of 20 Ci 137Cs γ-ray Compton spectrometer for the ...

    Indian Academy of Sciences (India)

    ... than the conventional 241Am Compton spectrometers. The in-house 137Cs spectrometer is very useful for the measurement of momentum densities of heavy materials. The performance of the machine is assessed using aluminum, terbium and mercury samples and the experimental data from comparable apparatus.

  1. Faraday isolator based on TSAG crystal for high power lasers. (United States)

    Mironov, E A; Palashov, O V


    A Faraday isolator based on a new magneto-optical medium, TSAG (terbium scandium aluminum garnet) crystal, has been constructed and investigated experimentally. The device provides an isolation ratio of more than 30 dB at 500 W laser power. It is shown that this medium can be used in Faraday isolators for kilowatt-level laser powers.

  2. 1. Novel Dopants in Silica Based Fibers. 2. Applications of Embedded Optical Fiber Sensors in Reinforced Concrete Buildings and Structures (United States)


    effects in fibers, and nonlinear phenomena in fibers. We also use NMR, ESR and Raman techniques to study incorporation of novel as well as...neodymium, erbium, holmium or terbium. These products can be vacuum dried at elevated temperature. The acac-compound is less expensive since the hfa

  3. Time-gated FRET nanoassemblies for rapid and sensitive intra- and extracellular fluorescence imaging

    NARCIS (Netherlands)

    Afsari, Hamid Samareh; Cardoso Dos Santos, Marcelina; Lindén, Stina; Chen, Ting; Qiu, Xue; van Bergen En Henegouwen, Paul M P|info:eu-repo/dai/nl/071919481; Jennings, Travis L; Susumu, Kimihiro; Medintz, Igor L; Hildebrandt, Niko; Miller, Lawrence W

    Time-gated Förster resonance energy transfer (FRET) using the unique material combination of long-lifetime terbium complexes (Tb) and semiconductor quantum dots (QDs) provides many advantages for highly sensitive and multiplexed biosensing. Although time-gated detection can efficiently suppress

  4. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 39; Issue 7. Issue front cover thumbnail. Volume 39, Issue 7. December 2016, pages 1619-1889. pp 1619-1623. Luminescence properties of terbium-doped Li 3 PO 4 phosphor for radiation dosimetry · C B PALAN N S BAJAJ S K OMANWAR · More Details Abstract ...

  5. Interaction of 3-Hydroxypicolinamide with Tb III and its Sensitizing ...

    African Journals Online (AJOL)

    Interaction of 3-Hydroxypicolinamide with Tb III and its Sensitizing Effect on Terbium Luminescence as a Function of pH and Medium. ... The complex formed exists asML2 species in which HPA behaves as anO,O,N,N-chelating ligand. The solid complex is isolated from aqueous medium and characterized employing ...

  6. Lanthanide Enhanced Luminescence (LEL) with One and Two Photon Excitation of Quantum Dyes(copyright) Lanthanide(III)-Macrocycles

    National Research Council Canada - National Science Library

    Leif, Robert C; Becker, Margie C; Bromm Jr., Al; Chen, Nanguang; Cowan, Ann E; Vallarino, Lidia M; Yang, Sean; Zucker, Robert M


    .... Preliminary studies indicate that cells stained with the europium Quantum Dye can be observed both by conventional UV laser excitation and by infrared two-photon confocal microscopy. An enhancer has been found that enables the observation of simultaneous emissions from both the europium and terbium Quantum Dyes.

  7. Kinetically inert lanthanide complexes as reporter groups for binding of potassium by 18-crown-6

    DEFF Research Database (Denmark)

    Junker, Anne Kathrine Ravnsborg; Tropiano, Manuel; Faulkner, Stephen


    in a copper(I)-catalyzed alkyne-azide cycloaddition (CuAAC) “click” reaction with azide-functionalized crown ethers. The resulting complexes were investigated using NMR and optical methods. Titrations with potassium chloride in methanol observing the sensititzed europium- and terbium-centered emissions were...

  8. Page 1 Bull. Mater. Sci., Vol. 18, No. 5, September 1995, pp. 531 ...

    Indian Academy of Sciences (India)

    Both decrease in device dimensions and a drive for very high speed have increased the demand for improved interconnects with low resistanceſcapacitance (RC) coupling. Thin films of refractory metal silicides have been the subject of much interest in recent years owing to their widespread use as contact materials in VLSI.

  9. Quantitative strain analysis for advanced CMOS technology by Nano Beam Diffraction

    KAUST Repository

    Wang, Qingxiao


    Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found. © 2010 IEEE.

  10. Atomic Structure Studies of Semiconductor-Electrolyte, Metal and Vacuum Interfaces. (United States)


    Channeling Studies of Metal Interaction with Silicon R. Haight, T. Itoh, T. Narusawa, W.M. Gibson and A. Hiraki Epitaxial Growth of Germanium on Si(lll...Stages of Metal-Silicide Formation (Invited Paper) A. Hiraki , T. Narusawa and W.M. Gibson 44 American Physical Society, Dallas, TX, March 1982 Structure

  11. Fabrication and microstructural analysis of UN-U{sub 3}Si{sub 2} composites for accident tolerant fuel applications

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Kyle D., E-mail:; Raftery, Alicia M.; Lopes, Denise Adorno; Wallenius, Janne


    In this study, U{sub 3}Si{sub 2} was synthesized via the use of arc-melting and mixed with UN powders, which together were sintered using the SPS method. The study revealed a number of interesting conclusions regarding the stability of the system – namely the formation of a probable but as yet unidentified ternary phase coupled with the reduction of the stoichiometry in the nitride phase – as well as some insights into the mechanics of the sintering process itself. By milling the silicide powders and reducing its particle size ratio compared to UN, it was possible to form a high density UN-U{sub 3}Si{sub 2} composite, with desirable microstructural characteristics for accident tolerant fuel applications. - Highlights: • U{sub 3}Si{sub 2} fabricated from elemental uranium and silicon through arc melting. • Homogeneity of the silicides assessed through densitometry, XRD, SEM and EDS, chemical etching and optical microscopy. • UN powder fabricated using hydriding-nitriding method. • No phase transformations detected when sintering using silicide particle sizes less than UN particle size. • High density composite (98%TD) fabricated with silicide grain coating using spark plasma sintering at 1450 °C.

  12. Charge plasma diode - a novel device concept

    NARCIS (Netherlands)

    Rajasekharan, B.; Hueting, Raymond Josephus Engelbart; Salm, Cora; Hoang, T.; Schmitz, Jurriaan


    We propose a new device concept called charge plasma (CP) diode [1]. The diodes are with metal/silicided contacts of different workfunctions and thin intrinsic region in between. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body

  13. Contact and Alignment Marker Technology for Atomic Scale Device Fabrication

    NARCIS (Netherlands)

    Zuiddam, M.R.; Rogge, S.; Drift, E. van der; Ilge, B.; Palasantzas, G.


    This article reports on the technology to link atomic scale structures to macroscopic contact pads. Dedicated processes for electrode pattern formation in several materials have been developed and characterised. For pattern formation in CoSi2 a thermal compromise between proper silicide formation

  14. Microwave synthesis of electrode materials for lithium batteries

    Indian Academy of Sciences (India)


    Bi4B2O9 have been used as cathodes (Jones and Akridge. 1995). ... reactive, is a superb secondary heater (Vaidhyanathan et al 1997). Researches at our laboratory and elsewhere have demonstrated the use of microwaves in the synthesis of a wide ... 1997a), silicides (Vaidhyanathan and Rao 1997b), borides. (Mingos ...

  15. High-temperature stability of yttria-stabilized zirconia thermal barrier ...

    Indian Academy of Sciences (India)

    bustor and vehicle acreage applications [19–21]. However, silicide coatings are generally used for oxidation ... Since, Nb alloys are being used for these applications, TBC with a prior bond coat is essential for better ..... ing; notwithstanding the bond coat mitigates the thermal mis- match between the metal substrate and YSZ ...


    alloys and many inorganic compounds, including such materials as steels, refractory metal alloys, carbides, borides , and silicides. Because of the high...alumina is used for other parts. Heat is supplied through molybdenum wire resistance windings and controlled by a proportioning controller. Temperatures

  17. 78 FR 40131 - Proposed Subsequent Arrangement (United States)


    ... concerns the retransfer of 86 kg of U.S.-origin uranium, 17 kg of which is in the isotope of U-235 (19.74 percent enrichment), in the form of low enriched uranium-silicide Open Pool ] Australian Lightwater (OPAL...

  18. Page 1 602 Material synthesis A simple hydrothermal cell for ...

    Indian Academy of Sciences (India)

    graphy 231. Metal-oxide semiconductor. Growth of polysilicon and silicide films for. MOS-VLSI application 297. Microcrystalline. Electron microscopy study of chemically depo- sited Ni-P films . 433. Microstrip. Microstrip losses with Al2O overlay 535. Microstrip rejection filter. Effect of bulk and thin film dielectric overlay on.

  19. Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC

    Energy Technology Data Exchange (ETDEWEB)

    Wzorek, M., E-mail:; Czerwinski, A.; Borysiewicz, M.A.; Gołaszewska, K.; Myśliwiec, M.; Ratajczak, J.; Piotrowska, A.; Kątcki, J.


    Highlights: • Thin Ni–Si layers on SiC were studied after annealing. • Different types of microstructural defects occur depending on Ni:Si ratio. • Mechanisms leading to morphology degradation are discussed. • Presented method improves the microstructure of ohmic contacts to SiC. - Abstract: The new approach to fabrication process of nickel-based ohmic contacts to silicon carbide (SiC) is presented. During the first annealing step (300 °C), the amorphous Ni–Zr layer retards diffusion between two nickel silicide layers, thus handling the contradictory requirements for optimal Ni:Si ratio. Different stoichiometry obtained in each silicide layer allows to preserve smooth interface with SiC and simultaneously to avoid relatively easily meltable Si-rich Ni–Si phases during high temperature annealing (1000 °C) and therefore prevents morphology degradation. After annealing at 1000 °C only one final nickel silicide layer is present and Zr atoms are agglomerated at its surface. Morphology of the final silicide layer is substantially improved when compared to typical Ni-based contacts obtained by similar high-temperature annealings. The improved microstructure of the ohmic contact is a promising advantage in terms of SiC devices reliability.

  20. An Incommensurately Modulated Structure of eta '-Phase of Cu3+xSi Determined by Quantitative Electron Diffraction Tomography

    Czech Academy of Sciences Publication Activity Database

    Palatinus, L.; Klementová, Mariana; Dřínek, V.; Jarošová, M.; Petříček, V.


    Roč. 50, č. 8 (2011), s. 3743-3751 ISSN 0020-1669 R&D Projects: GA ČR GA203/09/1088 Institutional research plan: CEZ:AV0Z40320502 Keywords : copper silicide * incommensurate structure * electron diffraction tomography * ab inition structure solution * superspace Subject RIV: CA - Inorganic Chemistry Impact factor: 4.601, year: 2011

  1. Gap-closing test structures for temperature budget determination

    NARCIS (Netherlands)

    Faber, Erik Jouwert; Wolters, Robertus A.M.; Schmitz, Jurriaan


    We present the extension of a method for determining the temperature budget of the process side of silicon substrates and chips, employing silicide formation reactions. In this work, silicon-on-insulator type substrates are used instead of bulk silicon wafers. By an appropriate choice of the layer

  2. Characterization of electroless nickel as a seed layer for silicon solar ...

    Indian Academy of Sciences (India)

    based solar cell metallization. Nickel silicide formation and hence contact resistivity of the interface is largely influenced by the plating process and annealing conditions. In the present work, a thin seed layer is deposited from neutral pH and ...

  3. Structural and electrical properties of swift heavy ion beam irradiated ...

    Indian Academy of Sciences (India)

    Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the ...

  4. Substrate bias voltage and deposition temperature dependence on ...

    Indian Academy of Sciences (India)

    ... on Si (100) substrate. Deposition at higher substrate temperature causes the film to react with Si forming silicides at the film/Si substrate interface. Ti film undergoes a microstructural transition from hexagonal plate-like to round-shaped grains as the substrate temperature was raised from 300 to 50 °C during film deposition ...

  5. Toward a better understanding of the magnetocaloric effect: An experimental and theoretical study of MnFe.sub.4./sub.Si.sub.3./sub..

    Czech Academy of Sciences Publication Activity Database

    Gourdon, O.; Gottschlich, G.; Persson, J.; de la Cruz, C.; Petříček, Václav; McGuire, M.A.; Bruckel, T.


    Roč. 216, AUG (2014), s. 56-64 ISSN 0022-4596 Grant - others:AV ČR(CZ) Praemium Academiae Institutional support: RVO:68378271 Keywords : magneto caloric effect materials * intermetallic * silicide * magnetism * neutron diffraction * density functional theory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.133, year: 2014

  6. Luminescent properties of Al{sub 2}O{sub 3}: Tb powders; Propiedades luminiscentes de polvos de Al{sub 2}O{sub 3}: Tb

    Energy Technology Data Exchange (ETDEWEB)

    Esparza G, A.E.; Garcia, M.; Falcony, C.; Azorin N, J. [CICATA-IPN, Legaria 694, Col. Irrigacion, 11500 Mexico D.F. (Mexico)


    In this work the photo luminescent and cathode luminescent characteristics of aluminium oxide (Al{sub 2}O{sub 3}) powders impurified with terbium (Tb) were studied for their use in dosimetry. The optical, structural, morphological characteristics of the powders as function of variation in the impurity concentration and the annealing temperature will be presented. As regards the optical properties of powders (photoluminescence and cathode luminescence) it was observed a characteristic emission associated with radiative transitions between electron energy levels of terbium, the spectra associated with this emission consists of several peaks associated with such transitions. In the structural and morphological characterization (X-ray diffraction and scanning electron microscopy) it was appreciated that in accordance the annealing temperature of powders is augmented it is evident the apparition of certain crystalline phases. The results show that this is a promissory material for radiation dosimetry. (Author)

  7. Plastic optical fibre sensor for in-vivo radiation monitoring during brachytherapy (United States)

    Woulfe, P.; Sullivan, F. J.; Lewis, E.; O'Keeffe, S.


    An optical fibre sensor is presented for applications in real-time in-vivo monitoring of the radiation dose a cancer patient receives during seed implantation in Brachytherapy. The sensor is based on radioluminescence whereby radiation sensitive scintillation material is embedded in the core of a 1mm plastic optical fibre. Three scintillation materials are investigated: thallium-doped caesium iodide (CsI:Tl), terbium-doped gadolinium oxysulphide (Gd2O2S:Tb) and europium-doped lanthanum oxysulphide (La2O2S:Eu). Terbium-doped gadolinium oxysulphide was identified as being the most suitable scintillator and further testing demonstrates its measureable response to different activities of Iodine-125, the radio-active source commonly used in Brachytherapy for treating prostate cancer.

  8. [Luminescent cytochemical methods of detecting microorganisms]. (United States)

    Ivanovskaia, N P; Osin, N S; Khramov, E N; Zlobin, V N


    The paper shows that the luminescence cytochemical technique can be used for identification of microorganisms and microbiological synthesis products. The method is based on the interaction of specific fluorescence probes (ANS, terbium ions, and beta-diketonate complexes of europium, as well as metal-containing porphyrines) with major microbial intracellular components and toxins. Unlike classical microbiological, immunochemical or biochemical methods of detection, the proposed method has a reasonable versatility, specificity, sensitivity, rapid action, and possible automation.

  9. Radiotherapy dosimetry based on plastic optical fibre sensors (United States)

    O'Keeffe, S.; Grattan, M.; Hounsell, A.; McCarthy, D.; Woulfe, P.; Cronin, J.; Lewis, E.


    The use of a PMMA based plastic optical fibre in radiotherapy dosimetry is presented. The optical fibre tip is coated with a scintillation material, terbium-doped gadolinium oxysulfide (Gd2O2S:Tb), which fluoresces under ionising radiation. The emitted signal penetrates the fibre and propagates along the fibre where it is remotely monitored using a fluorescence spectrometer. The results demonstrate good repeatability, with a maximum percentage error of 0.59% and the response is independent of dose rate.

  10. Luminescent Lanthanide Metal Organic Frameworks for cis-Selective Isoprene Polymerization Catalysis


    Samantha Russell; Thierry Loiseau; Christophe Volkringer; Marc Visseaux


    In this study, we are combining two areas of chemistry; solid-state coordination polymers (or Metal-Organic Framework—MOF) and polymerization catalysis. MOF compounds combining two sets of different lanthanide elements (Nd3+, Eu3+/Tb3+) were used for that purpose: the use of neodymium was required due to its well-known catalytic properties in dienes polymerization. A second lanthanide, europium or terbium, was included in the MOF structure with the aim to provide luminescent properties. Sev...

  11. Modeled Neutron Induced Nuclear Reaction Cross Sections for Radiochemsitry in the region of Thulium, Lutetium, and Tantalum I. Results of Built in Spherical Symmetry in a Deformed Region

    Energy Technology Data Exchange (ETDEWEB)

    Hoffman, R. D. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)


    We have developed a set of modeled nuclear reaction cross sections for use in radiochemical diagnostics. Systematics for the input parameters required by the Hauser-Feshbach statistical model were developed and used to calculate neutron induced nuclear reaction cross sections for targets ranging from Terbium (Z = 65) to Rhenium (Z = 75). Of particular interest are the cross sections on Tm, Lu, and Ta including reactions on isomeric targets.

  12. Factors Affecting the Efficiency of Excited-States Interactions of Complexes between Some Visible Light-Emitting Lanthanide Ions and Cyclophanes Containing Spirobiindanol Phosphonates

    Directory of Open Access Journals (Sweden)

    M. S. Attia


    Full Text Available The efficiency of excited-states interactions between lanthanide ions Tb3+ and Eu3+ and some new cyclophanes (I, II, and III has been studied in different media. High luminescence quantum yield values for terbium and europium complexes in DMSO and PMMA were obtained. The photophysical properties of the green and red emissive Tb3+ and Eu3+ complexes have been elucidated, respectively.

  13. The effect of core and lanthanide ion dopants in sodium fluoride-based nanocrystals on phagocytic activity of human blood leukocytes (United States)

    Sojka, Bartlomiej; Liskova, Aurelia; Kuricova, Miroslava; Banski, Mateusz; Misiewicz, Jan; Dusinska, Maria; Horvathova, Mira; Ilavska, Silvia; Szabova, Michaela; Rollerova, Eva; Podhorodecki, Artur; Tulinska, Jana


    Sodium fluoride-based β-NaLnF4 nanoparticles (NPs) doped with lanthanide ions are promising materials for application as luminescent markers in bio-imaging. In this work, the effect of NPs doped with yttrium (Y), gadolinium (Gd), europium (Eu), thulium (Tm), ytterbium (Yb) and terbium (Tb) ions on phagocytic activity of monocytes and granulocytes and the respiratory burst was examined. The surface functionalization of leukocytes and respiratory burst of cells was observed for limited number of samples.

  14. The effect of metal distribution on the luminescence properties of mixed-lanthanide metal-organic frameworks. (United States)

    Cadman, Laura K; Mahon, Mary F; Burrows, Andrew D


    A series of lanthanide metal-organic frameworks (MOFs) of the general formula [Ln(Hodip)(H 2 O)]·nH 2 O (Sm, 1; Eu, 2; Gd, 3; Tb, 4; Dy, 5; Er, 6; H 4 odip = 5,5'-oxydiisophthalic acid) have been prepared and shown crystallographically to have isostructural three-dimensional frameworks. The fluorescence emission spectra of the europium compound 2, which is red, and the terbium compound 4, which is green, show characteristic peaks for transitions involving the metal centres, whereas that for the gadolinium compound 3 is dominated by transitions involving Hodip. Using a 1 : 1 : 1 mixture of europium, gadolinium and terbium nitrates in the synthesis resulted in the mixed-metal MOF [Gd 0.17 Tb 0.19 Eu 0.64 (Hodip)(H 2 O)]·nH 2 O 7, for which the ratio of the metal ions was determined using EDX spectroscopy. The fluorescence emission spectrum of 7 is dominated by europium emission bands reflecting the higher proportion of Eu 3+ centres and quenching of the terbium fluorescence by metal-to-metal energy transfer. A series of core-shell MOF materials based on the Ln(Hodip)(H 2 O) framework have been prepared in order to isolate the lanthanides in different domains within the crystals. The emission spectra for materials with Gd@Tb@Eu (8) and Tb@Eu@Gd (9) are dominated by terbium emissions, suggesting that physical separation from europium suppresses quenching. In contrast, the material with Eu@Gd@Tb (10) shows only broad ligand bands and europium emissions. This confirms that core-shell MOFs have different fluorescence properties to simple mixed-metal MOFs, demonstrating that the spatial distribution of the metals within a mixed-lanthanide MOF affects the fluorescence behaviour.

  15. Synthesis and stimulated luminescence property of Zn(BO2)2:Tb(3). (United States)

    Del Rosario, G Cedillo; Cruz-Zaragoza, E; Hipólito, M García; Marcazzó, J; Hernández A, J M; Murrieta S, H


    Zinc borate, Zn(BO2)2, doped with different concentrations of terbium (0.5-8mol%) was synthesized and polycrystalline samples were characterized by Scanning Electron Microscopy and X-Ray Diffraction. The Zn(BO2)2 was formed in the pure samples sintered at 750 and 800°C which has the body centered cubic structure, and a ZnB4O7 primitive orthorhombic phase was present. The thermoluminescent intensity was dependents on the thermal treatment (250-500°C) and also on the impurity concentration. The linear dose-response was obtained between 0.022-27.7Gy and 0.5-50Gy when the samples were exposed to beta and gamma radiation, respectively. The complex structure of the glow curves was analyzed by the Computerized Glow Curve Deconvolution method. The kinetics parameters were calculated assuming the general order kinetics model describing accurately the TL process. The glow curves of Tb(3+)-doped zinc borate phosphor were well deconvolved by six glow peaks. Zinc borate with 8mol% of impurity concentration exhibited an intense radioluminescent emission. The radioluminescent spectra show their maximum bands at 370, 490, 545 and 700nm related to the terbium ion in the zinc borate. These obtained results suggest that the terbium doped zinc borate is a promising phosphor for use in radiation dosimetry because of its high TL sensitivity to the ionizing radiation. Copyright © 2017 Elsevier Ltd. All rights reserved.

  16. Effect of Ising-type Tb3+ ions on the low-temperature magnetism of La, Ca cobaltite. (United States)

    Knížek, K; Jirák, Z; Hejtmánek, J; Veverka, M; Kaman, O; Maryško, M; Santavá, E; André, G


    Crystal and magnetic structures of the x = 0.2 member of the La0.8-xTbxCa0.2CoO3 perovskite series have been determined from powder neutron diffraction. Enhancement of the diffraction peaks due to ferromagnetic or cluster glass ordering is observed below TC = 55 K. The moments first evolve on Co sites, and ordering of Ising-type Tb(3+) moments is induced at lower temperatures by a molecular field due to Co ions. The final magnetic configuration is collinear Fx for the cobalt subsystem, while it is canted FxCy for terbium ions. The rare-earth moments align along local Ising axes within the ab-plane of the orthorhombic Pbnm structure. The behavior in external fields up to 70-90 kOe has been probed by magnetization and heat capacity measurements. The dilute terbium ions contribute to significant coercivity and remanence that both steeply increase with decreasing temperature. A remarkable manifestation of the Tb(3+) Ising character is the observation of a low-temperature region with an anomalously large linear term of heat capacity and its field dependence. Similar behaviors are detected also for other terbium dopings x = 0.1 and 0.3.

  17. Luminescence enhancement by energy transfer in melamine-Y{sub 2}O{sub 3}:Tb{sup 3+} nanohybrids

    Energy Technology Data Exchange (ETDEWEB)

    Stagi, Luigi, E-mail:; Chiriu, Daniele; Carbonaro, Carlo M.; Ricci, Pier Carlo [Dipartimento di Fisica, Università degli Studi di Cagliari, S.P. Monserrato-Sestu Km 0,700, 09042 Monserrato (Italy); Ardu, Andrea; Cannas, Carla [Departimento di Scienze Chimiche e Geologiche and INSTM, Università d Cagliari, SS 554 bivio Sestu, I-09042 Monserrato (Italy)


    The phenomenon of luminescence enhancement was studied in melamine-Y{sub 2}O{sub 3}:Tb hybrids. Terbium doped Y{sub 2}O{sub 3} mesoporous nanowires were synthesized by hydrothermal method. X-ray diffraction patterns and Raman scattering spectra testified the realization of a cubic crystal phase. Organic-inorganic melamine-Y{sub 2}O{sub 3}:Tb{sup 3+} hybrid system was successfully obtained by vapour deposition method. Vibration Raman active modes of the organic counterpart were investigated in order to verify the achievement of hybrid system. Photoluminescence excitation and photoluminescence spectra, preformed in the region between 250 and 350 nm, suggest a strong interaction among melamine and Terbium ions. In particular, a remarkable improvement of {sup 5}D{sub 4}→ F{sub J} Rare Earth emission (at about 542 nm) of about 10{sup 2} fold was observed and attributed to an efficient organic-Tb energy transfer. The energy transfer mechanism was studied by the use of time resolved photoluminescence measurements. The melamine lifetime undergoes to a significant decrease when adsorbed to oxide surfaces and it was connected to a sensitization mechanism. The detailed analysis of time decay profile of Terbium radiative recombination shows a variation of double exponential law toward a single exponential one. Its correlation with surface defects and non-radiative recombination was thus discussed.

  18. The effect of alloying on the ordering processes in near-alpha titanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Popov, Artemiy, E-mail: [Ural Federal University named after the first President of Russia B.N. Yeltsin, 19 Mira Street, Ekaterinburg 620002 (Russian Federation); Rossina, Natalya [Ural Federal University named after the first President of Russia B.N. Yeltsin, 19 Mira Street, Ekaterinburg 620002 (Russian Federation); Popova, Maria, E-mail: [Ural Federal University named after the first President of Russia B.N. Yeltsin, 19 Mira Street, Ekaterinburg 620002 (Russian Federation)


    The substructure of near-alpha Ti–Al–Sn–Zr–Mo–Si alloys containing up to 12.5 at% aluminum was studied by transmission electron microscopy (TEM). It was shown that long-range order sections are formed at aging temperatures up to 500 °C in alloys, high in aluminum, and the ordered phase is formed by the nucleation and growth mechanism at 700 °C aging temperatures. Causes of changing the phase transformation mechanism have been discussed, and the relationship between the structure and properties of alloys, depending on modes of heat treatment has been analyzed. Also the influence of aluminides and silicides precipitation on the mechanical alloy properties after aging was examined. It was shown that the aluminide formation led to a slight hardening and a significant viscosity decrease. The silicide particles formation reduced the heat resistance properties, due to the depletion of the solid solution by silicon.

  19. All-Si photodetector for telecommunication wavelength based on subwavelength grating structure and critical coupling (United States)

    Taghizadeh, Alireza; Zali, Aref Rasoulzadeh; Chung, Il-Sug; Moravvej-Farshi, Mohammad Kazem


    We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered subwavelength grating structure topped with a silicide layer of nanometers thickness as an absorbing material. It is shown that a nearly-perfect light absorption is possible for the thin silicide layer by its integration to the grating resonator. The absorption is shown to be maximized when the critical coupling condition is satisfied. Simulations show that the external quantum efficiency of the proposed photodetector with a 2-nm-thick PtSi absorbing layer at the center wavelength of 1550 nm can reach up to ˜60%.

  20. Nanoamorphous carbon-based photonic crystal infrared emitters (United States)

    Norwood, Robert A [Tucson, AZ; Skotheim, Terje [Tucson, AZ


    Provided is a tunable radiation emitting structure comprising: a nanoamorphous carbon structure having a plurality of relief features provided in a periodic spatial configuration, wherein the relief features are separated from each other by adjacent recessed features, and wherein the nanoamorphous carbon comprises a total of from 0 to 60 atomic percent of one or more dopants of the dopant group consisting of: transition metals, lanthanoids, electro-conductive carbides, silicides and nitrides. In one embodiment, a dopant is selected from the group consisting of: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La and other lanthanides, Hf, Ta, W, Rh, Os, Ir, Pt, Au, and Hg. In one embodiment, a dopant is selected from the group consisting of: electro-conductive carbides (like Mo.sub.2C), silicides (like MoSi.sub.2) and nitrides (like TiN).

  1. Isothermal and cyclic oxidation resistance of pack siliconized Mo-Si-B alloy (United States)

    Majumdar, Sanjib


    Oxidation behaviour of MoSi2 coated Mo-9Si-8B-0.75Y (at.%) alloy has been investigated at three critical temperatures including 750, 900 and 1400 °C in static air. Thermogravimetric analysis (TGA) data indicates a remarkable improvement in the oxidation resistance of the silicide coated alloy in both isothermal and cyclic oxidation tests. The cross-sectional scanning electron microscopy and energy dispersive spectroscopic analysis reveal the occurrence of internal oxidation particularly at the crack fronts formed in the outer MoSi2 layer during thermal cycling. The dominant oxidation mechanisms at 750-900 °C and 1400 °C are identified. Development of MoB inner layer further improves the oxidation resistance of the silicide coated alloy.

  2. Accident-tolerant oxide fuel and cladding (United States)

    Mariani, Robert D.


    Systems and methods for accident tolerant oxide fuel. One or more disks can be placed between fuel pellets comprising UO.sub.2, wherein such disks possess a higher thermal conductivity material than that of the UO.sub.2 to provide enhanced heat rejection thereof. Additionally, a cladding coating comprising zircaloy coated with a material that provides stability and high melting capability can be provided. The pellets can be configured as annular pellets having an annulus filled with the higher thermal conductivity material. The material coating the zircaloy can be, for example, Zr.sub.5Si.sub.4 or another silicide such as, for example, a Zr-Silicide that limits corrosion. The aforementioned higher thermal conductivity material can be, for example, Si, Zr.sub.xSi.sub.y, Zr, or Al.sub.2O.sub.3.

  3. Process-oriented microstructure evolution of V{sub ss}-V{sub 3}Si-V{sub 5}SiB{sub 2}; Prozessabhaengige Mikrostrukturausbildung von V{sub ss}-V{sub 3}Si-V{sub 5}SiB{sub 2}-Werkstoffen

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, Manja; Koeppe-Grabow, Birte [Magdeburg Univ. (Germany)


    Vanadium silicide alloys are potentially interesting high temperature materials, since they combine high mechanical strength at temperatures of up to 1 000 C with a low density. In this study, the microstructures of innovative V-Si-B high temperature materials are examined using different analytical methods. The selected V-9Si-13B model alloy was manufactured using a powder metallurgical process route as well as an ingot metallurgical process. The alloys show a vanadium solid solution phase as well as the high-strength silicide phases V{sub 3}Si and V{sub 5}SiB{sub 2}. Especially for the powder metallurgically fabricated alloy, showing finely dispersed phases, the quantification of microstructural constituents is difficult. The phases, however, can be separated from one another via computer tomography.

  4. Schottky barrier height tuning using P+ DSS for NMOS contact resistance reduction (United States)

    Khaja, Fareen Adeni; Rao, K. V.; Ni, Chi-Nung; Muthukrishnan, Shankar; Lei, Jianxin; Darlark, Andrew; Peidous, Igor; Brand, Adam; Henry, Todd; Variam, Naushad


    Nickel silicide (NiSi) contacts are adopted in advanced CMOS technology nodes as they demonstrate several benefits such as low resistivity, low Si consumption and formation temperature. But a disadvantage of NiSi contacts is that they exhibit high electron Schottky barrier height (SBH), which results in high contact resistance (Rc) and reduces the NMOS drive current. To reduce SBH for NMOS, we used phosphorous (P) ion implantation into NiPt silicide with optimized anneal in order to form dopant segregated Schottky (DSS). Electrical characterization was performed using test structures such as Transmission Line Model, Cross-Bridge Kelvin Resistor, Van der Pauw and diodes to extract Rc and understand the effects of P+ DSS on ΦBn tuning. Material characterization was performed using SIMS, SEM and TEM analysis. We report ˜45% reduction in Rc over reference sample by optimizing ion implantation and anneal conditions (spike RTA, milli-second laser anneals (DSA)).

  5. The Application of Nuclear Techniques to Solid State Devices. (United States)


    characterized phenomeno- logically . Our efforts therefore addressed themselves toward broaden- ing the basis of experimental facts and deepening the...Italy C. L. Ramiller Student Intel Magnetics, Santa Clara, California J. L. Regolini Collaborator Stanford University, Stanford, California P. Revesz...316 (1978). 20. "Radioactive Silicon as a Marker in Thin-Film Silicide Formation", R. Pretorius, C. L. Ramiller , S. S. Lau and M-A. Nicolet, Appl. Phys

  6. Technical Operations Support III (TOPS III). Task Order 0061: Fundamental Theory Based Assessment of Thermoelectric Merit Factor for Heusler Alloys (United States)


    can yet be commercialized. Moreover, these materials are not very practical due to scarcity of the elements, toxicity and decomposition-evaporation...are not very practical due to scarcity of the elements, toxicity and decomposition-evaporation problems at elevated temperatures [1]. Today, there...Maximum zT: 0.8 at over 1000K Atoms: 12 Lanthanum Aluminium Silicide (LaAlSi) Experimental Structure: cubic [a b c]: 5.94 Bandgap: (-) DFT(GGA) Energy

  7. Surface morphology and the phase formation at Cr/Si system

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, Shivani [Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302004 (India)]. E-mail:; Jain, Ankur [Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302004 (India); Lal, Chhagan [Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302004 (India); Ganesan, V. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore (India); Jain, I.P. [Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302004 (India)]. E-mail:


    Metal silicide technology has been attracting attention worldwide and it constitutes an active, frontier area of research. Research in this area has not only stimulated the exploration of new phenomena, but is also leading to a technological revolution. Electron beam evaporation in ultra high vacuum (UHV) environment is one of the best techniques to grow thin metal film on Si substrate. Metal silicide contact is an interesting and important part of integrated circuit. Due to selective growth and high thermal stability metal silicides are used in very large scale integrated (VLSI) and ultra large scale integrated (ULSI) applications. In this paper our interest is to show GIXRD, XRR and SPM measurement on C (2 nm)/Cr (25 nm)/Si (1 0 0) system in which thin films were deposited using electron beam evaporation technique at 2 x 10{sup -8} Torr vacuum. The capping layer of 2 nm carbon is deposited to stop contamination. The C (2 nm)/Cr (25 nm)/Si (1 0 0) system were annealed in 10{sup -5} Torr vacuum at temperatures 300-600 deg. C to study the formation of chromium silicide. Structural properties at the interface has been studied by grazing incidence X-ray diffraction (GIXRD), which shows formation of Cr{sub 3}Si and CrSi{sub 2} as a result of interface mixing due to annealing. The morphology of the system was investigated by AFM in tapping mode. It was found that nano-rod type structures were formed with annealing at 600 deg. C temperature.

  8. Page 1 478 S Bandopadhyay et al Binding energy (eV) 84 O 85 O ...

    Indian Academy of Sciences (India)

    Figure 6. Expanded runs of the strongest XPS core lines, a. Ni2p doublet and b. Si2P. Table 1. Composition of nickel silicide film. XPS Amplitude FWHM Intensity ASF Relative atomic line (A;KCPS) [T;eV] (I, Kcps-eV) (si) concentration (C). Ni2pala (Eso = 852-6 eV) 135-2 2-4 324.5. Main line 3.7 0.49. Satellite. Eso = 857.8 ...

  9. The growth and reactivity of the {Sm}/{Si(100)} interface (United States)

    Onsgaard, J.; Christiansen, M.; Ørskov, F.; Godowski, P. J.


    The growth of the {Sm}/{Si(100)} interface is described and discussed in the context of the increasing experimental insight into lanthanide/semiconductor interfaces. Silicide formation takes place in the 1 to 5 monolayers coverage region. Different ordered structures, dependent on the initial coverage and temperature treatment, are observed. Oxygen adsorption and binding is strongly promoted, both when Sm is present at the surface and when oxygen reacts with a samarium-suicide film.

  10. Platinum Group Coatings for Refractory Metals (United States)


    molybdenum , tungsten, tantalum, niobium, rhenium or carbon/carbon must be used to fabricate the parts to withstand these temperatures. These materials and...layers (eg silicides, borides ) o Alloy coatings that form compact oxide layers (Ni and Co F based alloys) o Stable oxides that provide physical barriers...thermally etched) surface and seems to promote adhesion. Molybdenum rods 3mm in diameter were used as substrates during many of the runs where the

  11. Infrared technology and applications; Proceedings of the Meeting, Cannes, France, November 26-29, 1985 (United States)

    Baker, Lionel R. (Editor); Masson, Andre (Editor)


    The present conference on state-of-the-art IR systems and components technologies and their applications encompasses developments in IR systems design, production technologies, IR component testing, IR systems evaluations, laboratory and industrial applications, and aerospace ranging sensor and surveillance sensor applications. Attention is given to IR zoom lens telescopes, large zinc sulphide windows for airborne applications, thermal imaging system evaluation, minimum resolvable temperature difference measurement methods, industrial use of IR spectroscopy, platinum silicide sensor imagery, and recent developments in laser rangefinders.

  12. Cobalt alloy ion sources for focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Muehle, R.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Zimmermann, P. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)


    Cobalt alloy ion sources have been developed for silicide formation by focused ion beam implantation. Four eutectic alloys AuCo, CoGe, CoY and AuCoGe were produced by electron beam welding. The AuCo liquid alloy ion source was investigated in detail. We have measured the emission current stability, the current-voltage characteristics, and the mass spectrum as a function of the mission current. (author) 1 fig., 2 refs.

  13. Self-Propagating High-Temperature Synthesis of Titanium Carbosilicide and Electrically Conductive Composite Coatings on its Basis (United States)

    Shulpekov, A. M.; Lepakova, O. K.; Golobokov, N. N.; Dyukarev, M. A.


    Titanium carbosilicide is obtained by the method of self-propagating high-temperature synthesis with titanium and ferrosilicon (with silicon content of 80 mass %) used as initial products. Addition of TiSi2 to the endproduct with the subsequent heat treatment allows the content of titanium silicide to be increased. The materials based on titanium carbosilicide provide electroconductivity of polymer composite coatings at temperatures exceeding 350°C.

  14. An incommensurately modulated structure of eta '-phase of Cu.sub.3+x./sub.Si determined by quantitative electron diffraction tomography

    Czech Academy of Sciences Publication Activity Database

    Palatinus, Lukáš; Klementová, Mariana; Dřínek, Vladislav; Jarošová, Markéta; Petříček, Václav


    Roč. 50, č. 8 (2011), s. 3743-3751 ISSN 0020-1669 R&D Projects: GA ČR GA203/09/1088 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z40720504 Keywords : copper silicide * incommensurate structure * electron diffraction tomography * ab inition structure solution * superspace Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.601, year: 2011

  15. Alternative Plasmonic Materials: Beyond Gold and Silver

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Shalaev, Vladimir M.; Boltasseva, Alexandra


    such as gold and silver, that exhibit metallic properties and provide advantages in device performance, design flexibility, fabrication, integration, and tunability. This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent...... conducting oxides, perovskite oxides, metal nitrides, silicides, germanides, and 2D materials such as graphene. This review provides a summary of the recent developments in the search for better plasmonic materials and an outlook of further research directions....

  16. High Temperature Interactions of Metallic Matrices with Ceramic Reinforcements (United States)


    temperatura range were extensive; various metal silicides, metalIcarbides, ternary metal-slilcon-carbides, and unreacted carbon were formed as layered...Couples 3.2.1 Preparation of SiC Ceramic: The polycrystalline SiC substrates, designated as Hexoloy, were obtained from the Carborundum Corporation ...and was received from Engelhard Corporation . The metal pieces were cut into a similar size to that of the SiC, mechanically ground with #600 SiC papers

  17. Transmission electron microscopy study on silicon nitride/stainless steel bonded interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Poza, P. [Departamento de Ciencia e Ingenieria de los Materiales, Universidad Rey Juan Carlos, 28933 Mostoles, Madrid (Spain); Miranzo, P. [Institute of Ceramics and Glass, CSIC, Campus de Cantoblanco, 28049 Madrid (Spain); Osendi, M.I. [Institute of Ceramics and Glass, CSIC, Campus de Cantoblanco, 28049 Madrid (Spain)], E-mail:


    The reaction zone of a diffusion bonded Si{sub 3}N{sub 4}/stainlees steel (ss) interface formed at 1100 deg. C was analyzed by transmission electron microscopy and X-ray diffraction (XRD). Besides the formation of various iron silicides, iron nitride and chromium nitride phases detected by XRD, Cr{sub 3}Ni{sub 5}Si{sub 2} crystals were identified at the interface by TEM.

  18. Manhattan Project Technical Series The Chemistry of Uranium (I) Chapters 1-10

    Energy Technology Data Exchange (ETDEWEB)

    Rabinowitch, E. I. [Argonne National Laboratory (ANL), Argonne, IL (United States); Katz, J. J. [Argonne National Laboratory (ANL), Argonne, IL (United States)


    This constitutes Chapters 1 through 10. inclusive, of The Survey Volume on Uranium Chemistry prepared for the Manhattan Project Technical Series. Chapters are titled: Nuclear Properties of Uranium; Properties of the Uranium Atom; Uranium in Nature; Extraction of Uranium from Ores and Preparation of Uranium Metal; Physical Properties of Uranium Metal; Chemical Properties of Uranium Metal; Intermetallic Compounds and Alloy systems of Uranium; the Uranium-Hydrogen System; Uranium Borides, Carbides, and Silicides; Uranium Nitrides, Phosphides, Arsenides, and Antimonides.

  19. Thin films and buried interfaces characterization with X-ray standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Lagomarsino, S. [CNR, Rome (Italy). Istituto Elettronica Stato Solido


    The X-ray standing wave techniques is a powerful, non destructive method to study interfaces at the atomic level. Its basic features are described here together with the peculiarities of its applications to epitaxial films and buried interfaces. As examples of applications, experiments carried out on Si/silicide interfaces, on GaAs/InAs/GaAs buried interfaces and on Si/Ge superlattices are shown.

  20. Surface modification to improve fireside corrosion resistance of Fe-Cr ferritic steels

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jong-Hee (Clarendon Hills, IL); Natesan, Krishnamurti (Naperville, IL); Rink, David L. (Mokena, IL)


    An article of manufacture and a method for providing an Fe--Cr ferritic steel article of manufacture having a surface layer modification for corrosion resistance. Fe--Cr ferritic steels can be modified to enhance their corrosion resistance to liquid coal ash and other chemical environments, which have chlorides or sulfates containing active species. The steel is modified to form an aluminide/silicide passivating layer to reduce such corrosion.

  1. Influence of Si(111)-Cr surface phases in the formation and conductivity of Fe and Yb monolayers at room temperature on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Galkin, N.G.; Goroshko, D.L.; Dotsenko, S.A.; Gouralnik, A.S.; Louchaninov, I.V


    Conductivity through the disordered iron and ytterbium two-dimensional layers during their formation on Si(111)-7x7, Si(111)7x7-Cr and Si(111)-({radical}3x{radical}3)/30 deg. -Cr surface phases was investigated. It was found in the case of Si(111)-7x7 surface that at submonolayer [1 monolayer (ML)=7.8x10{sup 18} at./m{sup 2} ] metal coverage iron and ytterbium atoms intermix with silicon surface atoms resulting in formation of silicide islands and silicide alloy layers which display the properties of a degenerated semiconductor. Deposition of small amounts (within one monolayer) of iron or ytterbium atoms onto the Si(111)-[({radical}3x{radical}3)/30 deg. ]-Cr surface phase results in growth of iron or ytterbium metal islands without formation of silicides. This fact indicates that this surface phase represents a diffusion barrier which blocks intermixing. It has been shown that metallic-type conductivity through the nearly continuous layer occurs at the coverage of 8.5 ML for Fe and 6.0 ML for Yb. For deposition of Fe or Yb atoms onto the Si(111)7x7-Cr surface phase, the 3D island growth mode without metallic-type layer conductivity was found within a coverage range extending up to 20-30 monolayers.

  2. Phase Evolution in and Creep Properties of Nb-Rich Nb-Si-Cr Eutectics (United States)

    Gang, Florian; Kauffmann, Alexander; Heilmaier, Martin


    In this work, the Nb-rich ternary eutectic in the Nb-Si-Cr system has been experimentally determined to be Nb-10.9Si-28.4Cr (in at. pct). The eutectic is composed of three main phases: Nb solid solution (Nbss), β-Cr2Nb, and Nb9(Si,Cr)5. The ternary eutectic microstructure remains stable for several hundred hours at a temperature up to 1473 K (1200 °C). At 1573 K (1300 °C) and above, the silicide phase Nb9(Si,Cr)5 decomposes into α-Nb5Si3, Nbss, and β-Cr2Nb. Under creep conditions at 1473 K (1200 °C), the alloy deforms by dislocation creep while the major creep resistance is provided by the silicide matrix. If the silicide phase is fragmented and, thus, its matrix character is destroyed by prior heat treatment [e.g., at 1773 K (1500 °C) for 100 hours], creep is mainly controlled by the Laves phase β-Cr2Nb, resulting in increased minimum strain rates. Compared to state of the art Ni-based superalloys, the creep resistance of this three-phase eutectic alloy is significantly higher.

  3. A novel nanoscaled Schottky barrier based transmission gate and its digital circuit applications (United States)

    Kumar, Sunil; Loan, Sajad A.; Alamoud, Abdulrahman M.


    In this work we propose and simulate a compact nanoscaled transmission gate (TG) employing a single Schottky barrier based transistor in the transmission path and a single transistor based Sajad-Sunil-Schottky (SSS) device as an inverter. Therefore, just two transistors are employed to realize a complete transmission gate which normally consumes four transistors in the conventional technology. The transistors used to realize the transmission path and the SSS inverter in the proposed TG are the double gate Schottky barrier devices, employing stacks of two metal silicides, platinum silicide (PtSi) and erbium silicide (ErSi). It has been observed that the realization of the TG gate by the proposed technology has resulted into a compact structure, with reduced component count, junctions, interconnections and regions in comparison to the conventional technology. The further focus of this work is on the application part of the proposed technology. So for the first time, the proposed technology has been used to realize various combinational circuits, like a two input AND gate, a 2:1 multiplexer and a two input XOR circuits. It has been observed that the transistor count has got reduced by half in a TG, two input AND gate, 2:1 multiplexer and in a two input XOR gate. Therefore, a significant reduction in transistor count and area requirement can be achieved by using the proposed technology. The proposed technology can be also used to perform the compact realization of other combinational and sequential circuitry in future.

  4. A study on the change in the phase transition temperature of TiSi sub 2 by adding the Zr element on different Si substrates

    CERN Document Server

    Yoon, S H


    The stabilization of C49 TiSi sub 2 at high temperature was investigated by adding Zr element to Ti-silicide both on single crystalline Si(100) and amorphous Si substrates. This stabilization of the C49 TiSi sub 2 phase, which exhibits lower surface and interface energies than those of the C54 TiSi sub 2 phase, was expected to suppress the problems of Ti-silicide, such as the phase transition and the agglomeration. Ti and Zr films of 40 nm were co-deposited on Si substrates in a dual e-beam evaporation system equipped with an ion pump and at a base pressure of approx 5x10 sup - sup 9 Torr. The amounts of Zr contents added to the Ti-silicide were 5, 10 and 20 atomic %, and the thicknesses were monitored by in-situ quartz-crystal thickness monitors. After the deposition, films were annealed by using an ex-situ vacuum furnace at temperatures between 600 .deg. C and 900 .deg. C in 100 .deg. C increments. The phase identification and the chemical compositions were investigated by X-ray diffraction (XRD) and Auger ...

  5. Electronic properties of new superconductors based on Ca(Al sub x Si sub 1 sub - sub x) sub 2 and Sr(Ga sub x Si sub 1 sub - sub x) sub 2 in crystal and nanotubular states

    CERN Document Server

    Shein, I R; Medvedeva, N I; Ivanovskij, A L


    The zone structures of the new Ca(Al sub x Si sub 1 sub - sub x) sub 2 and Sr(Ga sub x Si sub 1 sub - sub x) sub 2 layered superconductors (AlB sub 2 -type) are studied through the LMTO first-principle full-potential method. It is shown that the superconducting properties of the ternary silicides is conditioned by high density of the (Ca, Sr)d-states near the Fermi level, whereas the T sub C growth by the Sr(Ga sub x Si sub 1 sub - sub x) sub 2 -> Ca(Al sub x Si sub 1 sub - sub x) sub 2 transition is related to the increase in the photon frequencies due to the atoms mass decrease. Modeling the electron properties of the hypothetical (11, 11) and (20, 0) CaAlSi and SrGaSi nanotubes is accomplished. The silicide systems by transition from the crystalline to nanotubular state retain the metal-like properties. The template and film convolution methods may become the methods for obtaining the silicide nanotubes

  6. Studies on layer growth and interfaces on Ta-base thin layers by means of XPS; Untersuchungen zu Schichtwachstum und Grenzflaechen an Ta-basierten Duennschichten mittels XPS

    Energy Technology Data Exchange (ETDEWEB)

    Zier, M.


    In this thesis studies on the growth and on the formation of the interfaces of Ta and TaN layers on Si and SiO{sub 2} were performed. In the system TaN on SiO{sub 2} no reaction on the interface could be found. As the system with the mostly disturbed interface Ta on SiO{sub 2} was proved. Here a reduction of the SiO{sub 2} at simultaneous oxidation of the Ta was to be observed. Additionally tantalum silicide was formed to be considered concerning the bonding state as Ta{sub 5}Si{sub 3}, from which a double layer of a tantalum silicide and a tantalum suboxide resulted. A whole thickness of the double layer of above 1 nm resulted. In the system Ta on Si at the deposition of the film on the interface a tantalum silicide was formed to be characterized concerning the bonding state as TaSi{sub 2}. The thickness of the interlayer growed thereby up to 0.8 nm in form of islands. Finally in the system TaN on Si a silicon nitride formation during the deposition was observed, which was attributed to the insertion of adsorbed nitrogen from the sputtering atmosphere by recoil implantation of the sputtered Ta atoms. The silicon nitride interlayer growed thereby up to a thickness of 0.8 nm.

  7. Influence of Powder Metallurgical Processing Routes on Phase Formations in a Multicomponent NbSi-Alloy (United States)

    Seemüller, C.; Hartwig, T.; Mulser, M.; Adkins, N.; Wickins, M.; Heilmaier, M.


    Refractory metal silicide composites on the basis of Nbss-Nb5Si3 have been investigated as potential alternatives for nickel-base superalloys for years because of their low densities and good high-temperature strengths. NbSi-based composites are typically produced by arc-melting or casting. Samples in this study, however, were produced by powder metallurgy because of the potential for near net-shape component fabrication with very homogeneous microstructures. Either gas atomized powder or high-energy mechanically alloyed elemental powders were compacted by powder injection molding or hot isostatic pressing. Heat treatments were applied for phase stability evaluation. Slight compositional changes (oxygen, nitrogen, or iron) introduced by the processing route, i.e., powder production and consolidation, can affect phase formations and phase transitions during the process. Special focus is put on the distinction between different silicides (Nb5Si3 and Nb3Si) and silicide modifications (α-, β-, and γ-Nb5Si3), respectively. These were evaluated by x-ray diffraction and energy-dispersive spectroscopy measurements with the additional inclusion of thermodynamic calculations using the calculated phase diagram method.

  8. Design and optimization of high-performance slot-microring Si-photodetector based on internal photoemission effect (United States)

    Hosseinifar, Mitra; Ahmadi, Vahid; Ebnali-Heidari, Majid


    This paper presents the design and optimization of a microring resonator enhanced-internal photoemission effect-photodetectors (MRRE-IPE-PDs) suitable for optical communication. Two PD configurations are considered: the first consists of an MRR that is partially surrounded by a nanolayer of silicide with a single Schottky barrier on p-Si MRR; and the second consists of a silicide film buried in the width midpoints of a Si-based MRR where photoemission occurs over the two Schottky barriers. Several silicides are considered for the stripe (PtSi, Pd2Si, TaSi2 and CoSi2). The important features of the device, such as quantum efficiency (QE), responsivity, CW sensitivity and dark current are discussed and the trade-off between 3 dB bandwidth and QE are analyzed for nanoscaled absorption layer. In this regard, some design curves are presented for the optimized MRRE-IPE-PDs. Additionally, this paper reveals substantial improvement via comparisons with QE and responsivity measurements reported in the literature. Bandwidth-efficiency product of 61-71 GHz, responsivities of 0.8-0.9 and QE of 64-71% and the minimum receiver sensitivity of -65 to -66 dBm are also predicted for single and double Schottky barriers, respectively.

  9. Photoemission study of the initial stage of Er/Si(100) interface formation

    CERN Document Server

    Chen Gang; Li Zhe Shen; Wang Xun


    The initial stage of Er/Si(100) interface formation has been investigated by using synchrotron radiation photoelectron spectroscopy combined with low-energy electron diffraction. Both the valence band and the core level peaks of the Si photoemission spectra shift rigidly with increasing Er coverage in the submonolayer region. Upon depositing 0.6 monolayers of Er on the Si(100) surface at room temperature, the surface Fermi level is ultimately pinned at 0.29 eV above its initial value, which is equivalent to a Schottky barrier height of 0.67 eV. No evidence is found for the formation of Er silicides at the as-deposited surfaces. Annealing of the Er-covered Si(100) surfaces at 600 deg. C results in the appearance of a new peak located 1.2 eV below the Si 2p peak, indicating the presence of some sort of Er silicide. Meanwhile, the Er 4f spectrum measured for samples upon annealing exhibits a well-resolved fine structure, implying that only monospecies of Er silicide may exist on the surface.

  10. A Vacuum Encapsulated Lateral FED with Various Cathode Materials (United States)

    Park, Cheol-Min; Lim, Moo-Sup; Han, Min-Koo

    We have fabricated poly-Si, Si, and Ti-silicide field emitter arrays employing in-situ vacuum encapsulated lateral field emitter structures and investigated the field emission characteristics such as turn-on voltage, emission current density, and the stability of the emission current. Although poly-Si and Si emitter exhibit almost identical turn-on voltages, the Si emitter shows a sharp turn-on characteristic compared with the poly-Si emitter. It may be caused by the uniform surface of the Si emitter. The current densities of poly-Si, and Si emitter are 0.47, 0.43μA/tip respectively when the anode to cathode voltage is 90V. The turn-on voltage and current density of the Ti-silicide emitter are about 31V, and 1.81μA/tip at a VAK of 90V. The normalized current fluctuations shows that the Ti-silicide emitter exhibits the most stable current.

  11. Materials characterization of rapid thermal chemical vapor deposition of titanium disilicide (United States)

    Gladden-Green, Dannellia Banay

    Technological advancements of novel processes and materials involving refractory metal silicides for ultra large scale integration is of paramount importance to the semiconductor industry. Scaling of devices to meet the demands for increased packing density and speed requires such novel processes and materials. Rapid thermal chemical vapor deposition (RTCVD) of titanium disilicide (TiSisb2) was investigated in an effort to meet some of the challenges of ultra large scale integration (ULSI) technology. Selective RTCVD of TiSisb2 offers an optimal technological vehicle for achieving contacts to ultra-shallow junctions. Of all of the metal silicides, TiSisb2 has the lowest resistivity and meets the microelectronics demands for a thermally stable contact. The research results presented in this dissertation explores the mechanisms of selective RTCVD of TiSisb2 in terms of thermodynamic trends and kinetic driving forces for nucleation and growth. The present research addresses the qualitative and quantitative parameters that affect the controlling mechanisms for nucleation and therefore the results provide significant data and theoretical insights into a state-of-the-art process. Just as the fundamental building block in understanding the kinetic constraints of a process lie in the realm of thermodynamic exploration, understanding the complex processes involved in RTCVD TiSisb2 begin with characterization of the mechanisms governing thin film nucleation. In this work, the early stages of growth are investigated as they offer insight into how process parameters are optimized to render desired silicide film properties. Equilibrium simulations have been used to model the CVD reaction with very good trend indicating accuracy. Empirical investigations of CVD TiSisb2 took place in a low-pressure rapid-thermal environment using the SiHsb4 + TiClsb4 gas system on silicon (100) substrates. Secondary ion mass spectroscopy (SIMS) has been used to qualify the benefits of vacuum and

  12. Microstructural and mechanical characterization of Nb-based in situ composites from Nb-Si-Ti ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z. [Department of Mechanics and Mechanical Engineering, CAS Key Laboratory for Mechanical Behavior and Design of Materials, School of Engineering Science, University of Science and Technology of China, Hefei 230026, Anhui (China); Peng, L.M. [Department of Mechanics and Mechanical Engineering, CAS Key Laboratory for Mechanical Behavior and Design of Materials, School of Engineering Science, University of Science and Technology of China, Hefei 230026, Anhui (China)], E-mail:


    This study deals with the Nb-niobium silicide-based composites developed by the hot-pressing of Nb-Si-Ti ternary powder mixtures with a fixed Ti addition (6 at.%) and Si content ranging from hypereutectic (11 at.%) to near-eutectic compositions (18 at.%). The effects of Si content, Ti addition and strain rates on the sample microstructural characterization, flexural strength, fracture toughness, quasi-static compressive deformation and failure processes were investigated. It was revealed that the volume fraction of silicides increased with increasing Si content, and most of the Ti atoms dissolved into the niobium silicides to form (Nb,Ti){sub 5}Si{sub 3} solid solutions instead of binary titanium silicides. The experimental evidence showed that a moderate improvement in the flexural strength, fracture toughness and compressive yield stress of the composites was achieved by the addition of Ti. Higher Si additions produced a much more remarkable enhancement in the compressive yield stress and bulk hardness, whereas both the flexural strength and fracture toughness decreased with increasing Si content owing to the existence of residual porosities in the samples. The composites showed remarkable superiority to the arc-melted Nb-Si alloys and monolithic niobium silicides in fracture toughness (8.3-13.0MPa{radical}(m) vs. 4.5MPa{radical}(m)), where the toughening effect was attributed mainly to crack bridging and crack deflection by the remaining ductile Nb phase. Moreover, quasi-static uniaxial compression tests at strain rates between 10{sup -5} and 10{sup -3} s{sup -1} indicated that the deformation behavior and failure processes were significantly affected by Si content and strain rates. The strain-rate-hardening behavior for all the strain rates was observed in the composite materials and the strain-rate sensitivity decreased with increasing Si content. At a lower strain rate, the composite materials with a hypoeutectic Si composition failed with a pseudoplastic

  13. LLE Review 120 (July-September 2009)

    Energy Technology Data Exchange (ETDEWEB)

    Edgell, D.H., editor


    This issue has the following articles: (1) The Omega Laser Facility Users Group Workshop; (2) The Effect of Condensates and Inner Coatings on the Performance of Vacuum Hohlraum Targets; (3) Zirconia-Coated-Carbonyl-Iron-Particle-Based Magnetorheological Fluid for Polishing Optical Glasses and Ceramics; (4) All-Fiber Optical Magnetic Field Sensor Based on Faraday Rotation in Highly Terbium Doped Fiber; (5) Femtosecond Optical Pump-Probe Characterization of High-Pressure-Grown Al{sub 0.86}Ga{sub 0.14}N Single Crystals; (6) LLE's Summer High School Research Program; (7) Laser Facility Report; and (8) National Laser Users Facility and External Users Programs.

  14. Luminescent trimethoprim-polyaminocarboxylate lanthanide complex conjugates for selective protein labeling and time-resolved bioassays (United States)

    Reddy, D. Rajasekhar; Pedró Rosa, Laura E.; Miller, Lawrence W.


    Labeling proteins with long-lifetime emitting lanthanide (III) chelate reporters enables sensitive, time-resolved luminescence bioaffinity assays. Heterodimers of trimethoprim (TMP) covalently linked to various cs124-sensitized, polyaminocarboxylate chelates stably retain lanthanide ions and exhibit quantum yields of europium emission up to 20% in water. A time-resolved, luminescence resonance energy transfer (LRET) assay showed that TMP-polyaminocarboxylates bind to Escherichia coli dihydrofolate reductase (eDHFR) fusion proteins with nanomolar affinity in purified solutions and in bacterial lysates. The ability to selectively impart terbium or europium luminescence to fusion proteins in complex physiological mixtures bypasses the need for specific antibodies and simplifies sample preparation. PMID:21619068

  15. Micro-meter size organogelator with tri-color luminescence (blue, green and red) activated by Dy3+, Tb3+ and Eu3+ ions. (United States)

    Wang, QianMing


    The preparation of a novel type of low-molecular-weight amphiphilic organogelator bearing three long 14-alkyl chains and hydrophilic oligo(oxyethylene) groups was described. Ultra-violet absorption and fluorescence spectra give evidence of the energy transfer between organic ligands to lanthanide ions. Characteristic green, blue and red luminescence of the organogels were obtained and interesting emission properties of terbium, dysprosium and europium ions were unexpectedly observed at the first time during the order-disorder phase transition point (29 degrees C).

  16. Giant onsite electronic entropy enhances the performance of ceria for water splitting

    DEFF Research Database (Denmark)

    Naghavi, S. Shahab; Emery, Antoine A.; Hansen, Heine Anton


    lanthanides, and reaches a maximum value of ≈4.7 kB per oxygen vacancy for Ce4+/Ce3+ reduction. This unique and large positive entropy source in ceria explains its excellent performance for high-temperature catalytic redox reactions such as water splitting. Our calculations also show that terbium dioxide has......Previous studies have shown that a large solid-state entropy of reduction increases the thermodynamic efficiency of metal oxides, such as ceria, for two-step thermochemical water splitting cycles. In this context, the configurational entropy arising from oxygen off-stoichiometry in the oxide, has...

  17. Surface-Modified Gold Nanoparticles Possessing Two-Channel Responsive Eu(III) /Tb(III) Cyclen Complexes as Luminescent Logic Gate Mimics. (United States)

    Truman, Laura K; Bradberry, Samuel J; Comby, Steve; Kotova, Oxana; Gunnlaugsson, Thorfinnur


    The development of material-supported molecular logic gate mimics (MGLMs) for contained application and device fabrication has become of increasing interest. Herein, we present the formation of ≈5 nm gold nanoparticles (AuNPs) that have been surface-modified (via a thiol linkage) with heptadentate cyclen-based complexes of europium and terbium for sensing applications using delayed lanthanide luminescence and as integrated logic gate mimics within competitive media. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Synthesis and characterization of multifunctional silica core-shell nanocomposites with magnetic and fluorescent functionalities

    Energy Technology Data Exchange (ETDEWEB)

    Ma Zhiya; Dosev, Dosi [Department of Mechanical and Aeronautical Engineering, University of California-Davis, One Shields Avenue, Davis CA 95616 (United States); Nichkova, Mikaela [Department of Entomology, University of California-Davis, One Shields Avenue, Davis CA 95616 (United States); Dumas, Randy K. [Department of Physics, University of California-Davis, One Shields Avenue, Davis CA 95616 (United States); Gee, Shirley J.; Hammock, Bruce D. [Department of Entomology, University of California-Davis, One Shields Avenue, Davis CA 95616 (United States); Liu Kai [Department of Physics, University of California-Davis, One Shields Avenue, Davis CA 95616 (United States); Kennedy, Ian M. [Department of Mechanical and Aeronautical Engineering, University of California-Davis, One Shields Avenue, Davis CA 95616 (United States)], E-mail:


    Multifunctional core-shell nanocomposites with a magnetic core and a silica shell doped with lanthanide chelate have been prepared by a simple method. First, citric acid-modified magnetite nanoparticles were synthesized by a chemical coprecipitation method. Then the magnetite nanoparticles were coated with silica shells doped with terbium (Tb{sup 3+}) complex by a modified Stoeber method based on hydrolyzing and condensation of tetraethyl orthosilicate (TEOS) and a silane precursor. These multifunctional nanocomposites are potentially useful in a variety of biological areas such as bio-imaging, bio-labeling and bioassays because they can be simultaneously manipulated with an external magnetic field and exhibit unique phosphorescence properties.

  19. Luminescent probing of the simplest chiral α-amino acid-alanine in an enantiopure and racemic state. (United States)

    Tarasevych, Arkadii V; Kostyukov, Anton I; Baronskiy, Mark G; Rastorguev, Alexander A; Guillemin, Jean-Claude; Snytnikov, Valeriy N


    Luminescent spectroscopy combined with the technique of luminescent probing with rare earth ions (europium, gadolinium, terbium) and an actinide ion (uranyl) was used to differentiate enantiopure and racemic alanine, the simplest chiral proteinogenic amino acid. Using the achiral luminescent probes, small differences between pure L and DL alanine in the solid state were strongly amplified. Based on the observed electronic transitions of the probes, the position of the triplet level of the coordinated alanine was estimated. Formation of homo- and heterochiral complexes between enantiomers of alanine and the metal ions is discussed as a possible mechanism of chiral self-discrimination. © 2017 Wiley Periodicals, Inc.

  20. Investigation of magnon dispersion relations and neutron scattering cross sections with special attention to anisotropy effects

    DEFF Research Database (Denmark)

    Lindgård, Per-Anker; Kowalska, A.; Laut, Peter


    -helical structure. A numerical calculation is performed for terbium on the basis of the Kaplan-Lyons Hamiltonian with added crystalline anisotropy. The non-istropic exchange part is shown to have a small effect on the dispersion curves, and it turns out that radical changes of the Ruderman-Kittel-type functions...... for the exchange interaction seem to be necessary for agreement with experimental dispersion curves be obtained. The effect of the anisotropy in the cross section is estimated and shown to be important for small magnon energies....

  1. Rare (Earth Elements [score

    Directory of Open Access Journals (Sweden)

    Camilo Méndez


    Full Text Available Rare (Earth Elements is a cycle of works for solo piano. The cycle was inspired by James Dillon’s Book of Elements (Vol. I-V. The complete cycle will consist of 14 pieces; one for each selected rare (earth element. The chosen elements are Neodymium, Erbium, Tellurium, Hafnium, Tantalum, Technetium, Indium, Dysprosium, Lanthanium, Cerium, Europium, Terbium, Yttrium and Darmstadtium. These elements were selected due to their special atomic properties that in many cases make them extremely valuable for the development of new technologies, and also because of their scarcity. To date, only 4 works have been completed Yttrium, Technetium, Indium and Tellurium.

  2. Alaska's rare earth deposits and resource potential (United States)

    Barker, James C.; Van Gosen, Bradley S.


    Alaska’s known mineral endowment includes some of the largest and highest grade deposits of various metals, including gold, copper and zinc. Recently, Alaska has also been active in the worldwide search for sources of rare earth elements (REE) to replace exports now being limitedby China. Driven by limited supply of the rare earths, combined with their increasing use in new ‘green’ energy, lighting, transportation, and many other technological applications, the rare earth metals neodymium, europium and, in particular, the heavy rare earth elements terbium, dysprosium and yttrium are forecast to soon be in critical short supply (U.S. Department of Energy, 2010).

  3. Sol-Gel Electrolytes Incorporated by Lanthanide Luminescent Materials and Their Photophysical Properties (United States)

    Yu, Chufang; Zhang, Zhengyang; Fu, Meizhen; Gao, Jinwei; Zheng, Yuhui


    A group of silica gel electrolytes with lanthanide luminescent hybrid materials were assembled and investigated. Photophysical studies showed that terbium and europium hybrids displayed characteristic green and red emissions within the electrolytes. The influence of different concentration of the lanthanide hybrids on the electrochemical behavior of a gelled electrolyte valve-regulated lead-acid battery were studied through cyclic voltammograms, electrochemical impedance spectroscopy, water holding experiments and mobility tests. The morphology and particle size were analyzed by scanning electron microscopy. The results proved that lanthanide (Tb3+/Eu3+) luminescent materials are effective additives which will significantly improve the electrochemical properties of lead-acid batteries.


    Directory of Open Access Journals (Sweden)

    Sergiy Smola


    Full Text Available Four new heteronuclear lanthanide complexes with general formula [Ge(OH(μ-HDTPALnGe(OH (μ-DTPA] (Ln = Sm – Dy were synthesized and subsequently characterized by different physico- chemical methods. The structures of new compounds have been proposed. In considered complexes the 4f-luminescence of three-charged ions of samarium, europium, terbium and dysprosium is realized at UV-excitation. It is noteworthy that it is the first observation of 4f-luminescence in water solutions of heteronuclear f-p-complexes. The comparison of luminescent characteristics of hetero- and homonuclear landthanide complexes is described and discussed as well.

  5. Tetrakis(μ-2-phenoxypropionato-κ3O,O′:O′;κ3O:O,O′,κ4O:O′-bis[(1,10-phenanthroline-κ2N,N′(2-phenoxypropionato-κ2O,O′praseodymium(III

    Directory of Open Access Journals (Sweden)

    Jin-Bei Shen


    Full Text Available In the centrosymmetric binuclear title complex, [Pr2(C9H9O36(C12H8N22], the two PrIII ions are linked by four 2-phenoxypropionate (L groups through their bi- and tridentate bridging modes. Each PrIII ion is nine-coordinated by one 1,10-phenanthroline molecule, one bidentate carboxylate group and four bridging carboxylate groups in a distorted PrN2O7 monocapped square-antiprismatic geometry. The title compound is isotypic with its terbium- and dysprosium-containing analogues.

  6. Detection of rare earth elements in Powder River Basin sub-bituminous coal ash using laser-induced breakdown spectroscopy (LIBS)

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Phuoc [National Energy Technology Lab. (NETL), Pittsburgh, PA, (United State; Mcintyre, Dustin [National Energy Technology Lab. (NETL), Pittsburgh, PA, (United State


    We reported our preliminary results on the use of laser-induced breakdown spectroscopy to analyze the rare earth elements contained in ash samples from Powder River Basin sub-bituminous coal (PRB-coal). We have identified many elements in the lanthanide series (cerium, europium, holmium, lanthanum, lutetium, praseodymium, promethium, samarium, terbium, ytterbium) and some elements in the actinide series (actinium, thorium, uranium, plutonium, berkelium, californium) in the ash samples. In addition, various metals were also seen to present in the ash samples

  7. Faraday rotator based on TSAG crystal with orientation. (United States)

    Yasuhara, Ryo; Snetkov, Ilya; Starobor, Aleksey; Mironov, Evgeniy; Palashov, Oleg


    A Faraday isolator (FI) for high-power lasers with kilowatt-level average power and 1-µm wavelength was demonstrated using a terbium scandium aluminum garnet (TSAG) with its crystal axis aligned in the direction. Furthermore, no compensation scheme for thermally induced depolarization in a magnetic field was used. An isolation ratio of 35.4 dB (depolarization ratio γ of 2.9 × 10-4) was experimentally observed at a maximum laser power of 1470 W. This result for room-temperature FIs is the best reported, and provides a simple, practical solution for achieving optical isolation in high-power laser systems.

  8. The ternary system: Silicon-tantalum-uranium

    Energy Technology Data Exchange (ETDEWEB)

    Rogl, Peter, E-mail: [Institute of Physical Chemistry, University of Vienna, A-1090 Wien, Waehringerstrasse 42 (Austria); Noel, Henri [Laboratoire de Chimie du Solide et Materiaux, UMR-CNRS 6226, Universite de Rennes I, Avenue du General Leclerc, F-35042 Rennes, Cedex (France)


    Phase equilibria in the ternary system Si-Ta-U have been established in an isothermal section at 1000 {sup o}C by optical microscopy, electron probe microanalysis and X-ray diffraction. Two novel ternary compounds were observed and were characterised by X-ray powder Rietveld refinement: stoichiometric {tau}{sub 1}-U{sub 2}Ta{sub 3}Si{sub 4} (U{sub 2}Mo{sub 3}Si{sub 4}-type, P2{sub 1}/c; a = 0.70011(1), b = 0.70046(1), c = 0.68584(1) nm, ss = 109.38(1); R{sub F} = 0.073, X-ray powder Rietveld refinement) and {tau}{sub 2}-U{sub 2-x}Ta{sub 3+x}Si{sub 4} at x {approx} 0.30 (Sc{sub 2}Re{sub 3}Si{sub 4}-type = partially ordered Zr{sub 5}Si{sub 4}-type, P4{sub 1}2{sub 1}2; a = b = 0.69717(3)(1), c = 1.28709(4) nm; R{sub F} = 0.056; X-ray single crystal data). Mutual solubility of U-silicides and Ta-silicides are found to be very small i.e. below about 1 at.%. Due to the equilibrium tie-line Ta{sub 2}Si-U(Ta), no compatibility exists between the U-rich silicides U{sub 3}Si or U{sub 3}Si{sub 2} and tantalum metal. Single crystals obtained from alloys slowly cooled from liquid (2000 {sup o}C), yielded a fully ordered compound U{sub 2}Ta{sub 2}Si{sub 3}C (unique structure type; Pmna, a = 0.68860(1); b = 2.17837(4); c = 0.69707(1) nm; R{sub F2} = 0.048).

  9. Review of SiGe HBTs on SOI (United States)

    Mitrovic, I. Z.; Buiu, O.; Hall, S.; Bagnall, D. M.; Ashburn, P.


    This paper reviews progress in SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI) technology. SiGe HBTs on SOI are attractive for mixed signal radio frequency (RF) applications and have been of increasing research interest due to their compatibility with SOI CMOS (Complementary Metal Oxide Semiconductor) technology. In bipolar technology, the use of SOI substrate eliminates parasitic substrate transistors and associated latch-up, and has the ability to reduce crosstalk, particularly when combined with buried groundplanes (GP). Various technological SOI bipolar concepts are reviewed with special emphasis on the state-of-the-art SOI SiGe HBT devices in vertical and lateral design. More in depth results are shown from a UK consortium advanced RF platform technology, which includes SOI SiGe HBTs. Bonded wafer technology was developed to allow incorporation of buried silicide layers both above and below the buried oxide. New electrical and noise characterisation results pointed to reduced 1/ f noise in these devices compared to bulk counterparts. The lower noise is purported to arise from strain relief of the device structure due to the elasticity of the buried oxide layer during the high temperature epitaxial layer growth. The novel concept of the silicide SOI (SSOI) SiGe HBT technology developed for targeting a reduction in collector resistance, as well as for suppressing the crosstalk, is outlined. The buried tungsten silicide layers were found to have negligible impact on junction leakage. Further to vertical SiGe HBTs on SOI, the challenges of fabricating a lateral SOI SiGe HBT structure are presented.

  10. Diagenetically altered fossil micrometeorites suggest cosmic dust is common in the geological record (United States)

    Suttle, Martin D.; Genge, Matthew J.


    We report the discovery of fossil micrometeorites from Late Cretaceous chalk. Seventy-six cosmic spherules were recovered from Coniacian (87 ± 1 Ma) sediments of the White Chalk Supergroup. Particles vary from pristine silicate and iron-type spherules to pseudomorphic spherules consisting of either single-phase recrystallized magnetite or Fe-silicide. Pristine spherules are readily identified as micrometeorites on the basis of their characteristic mineralogies, textures and compositions. Both magnetite and silicide spherules contain dendritic crystals and spherical morphologies, testifying to rapid crystallisation of high temperature iron-rich metallic and oxide liquids. These particles also contain spherical cavities, representing weathering and removal of metal beads and irregular cavities, representing vesicles formed by trapped gas during crystallization; both features commonly found among modern Antarctic Iron-type (I-type) cosmic spherules. On the basis of textural analysis, the magnetite and Fe-silicide spherules are shown to be I-type cosmic spherules that have experienced complete secondary replacement during diagenesis (fossilization). Our results demonstrate that micrometeorites, preserved in sedimentary rocks, are affected by a suite of complex diagenetic processes, which can result in disparate replacement minerals, even within the same sequence of sedimentary beds. As a result, the identification of fossil micrometeorites requires careful observation of particle textures and comparisons with modern Antarctic collections. Replaced micrometeorites imply that geochemical signatures the extraterrestrial dust are subject to diagenetic remobilisation that limits their stratigraphic resolution. However, this study demonstrates that fossil, pseudomorphic micrometeorites can be recognised and are likely common within the geological record.

  11. Ultra-reduced phases in Apollo 16 regolith: Combined field emission electron probe microanalysis and atom probe tomography of submicron Fe-Si grains in Apollo 16 sample 61500 (United States)

    Gopon, Phillip; Spicuzza, Michael J.; Kelly, Thomas F.; Reinhard, David; Prosa, Ty J.; Fournelle, John


    The lunar regolith contains a variety of chemically reduced phases of interest to planetary scientists and the most common, metallic iron, is generally ascribed to space weathering processes (Lucey et al. ). Reports of silicon metal and iron silicides, phases indicative of extremely reducing conditions, in lunar samples are rare (Anand et al. ; Spicuzza et al. ). Additional examples of Fe-silicides have been identified in a survey of particles from Apollo 16 sample 61501,22. Herein is demonstrated the utility of low keV electron probe microanalysis (EPMA), using the Fe Ll X-ray line, to analyze these submicron phases, and the necessity of accounting for carbon contamination. We document four Fe-Si and Si0 minerals in lunar regolith return material. The new Fe-Si samples have a composition close to (Fe,Ni)3Si, whereas those associated with Si0 are close to FeSi2 and Fe3Si7. Atom probe tomography of (Fe,Ni)3Si shows trace levels of C (60 ppma and nanodomains enriched in C, Ni, P, Cr, and Sr). These reduced minerals require orders of magnitude lower oxygen fugacity and more reducing conditions than required to form Fe0. Documenting the similarities and differences in these samples is important to constrain their formation processes. These phases potentially formed at high temperatures resulting from a meteorite impact. Whether carbon played a role in achieving the lower oxygen fugacities—and there is evidence of nearby carbonaceous chondritic material—it remains to be proven that carbon was the necessary component for the unique existence of these Si0 and iron silicide minerals.

  12. Dry etching for microelectronics

    CERN Document Server

    Powell, RA


    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  13. Synthesis of lithium silicates by the modified method of combustion. XRD and IR; Sintesis de silicatos de litio por el metodo modificado de combustion. DRX e IR

    Energy Technology Data Exchange (ETDEWEB)

    Cruz, D.; Bulbulian, S. [Instituto nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)


    The combustion method is fixed in exothermic reactions for producing ceramic compounds. The precursor solutions are mixtures of metal nitrates and the fuels. This method was modified using non-oxidant compounds as lithium hydroxide and silicide acid and urea as fuel. The precursors were heated during 5 minutes at temperatures between 250 C and 550 C allowing so the mixture combustion. The obtained ceramics were characterized by X-ray diffraction and IR spectroscopy. The sample pollution with carbonates was evaluated and it was found that the presence of these diminish according as increase the calcination temperature. (Author)

  14. Synthesis of Long-T1 Silicon Nanoparticles for Hyperpolarized 29Si Magnetic Resonance Imaging (United States)

    Atkins, Tonya M.; Cassidy, Maja C.; Lee, Menyoung; Ganguly, Shreyashi; Marcus, Charles M.; Kauzlarich, Susan M.


    We describe the synthesis, materials characterization and dynamic nuclear polarization (DNP) of amorphous and crystalline silicon nanoparticles for use as hyperpolarized magnetic resonance imaging (MRI) agents. The particles were synthesized by means of a metathesis reaction between sodium silicide (Na4Si4) and silicon tetrachloride (SiCl4) and were surface functionalized with a variety of passivating ligands. The synthesis scheme results in particles of diameter ~10 nm with long size-adjusted 29Si spin lattice relaxation (T1) times (> 600 s), which are retained after hyperpolarization by low temperature DNP. PMID:23350651

  15. Synthesis of long T₁ silicon nanoparticles for hyperpolarized ²⁹Si magnetic resonance imaging. (United States)

    Atkins, Tonya M; Cassidy, Maja C; Lee, Menyoung; Ganguly, Shreyashi; Marcus, Charles M; Kauzlarich, Susan M


    We describe the synthesis, materials characterization, and dynamic nuclear polarization (DNP) of amorphous and crystalline silicon nanoparticles for use as hyperpolarized magnetic resonance imaging (MRI) agents. The particles were synthesized by means of a metathesis reaction between sodium silicide (Na₄Si₄) and silicon tetrachloride (SiCl₄) and were surface functionalized with a variety of passivating ligands. The synthesis scheme results in particles of diameter ∼10 nm with long size-adjusted ²⁹Si spin-lattice relaxation (T₁) times (>600 s), which are retained after hyperpolarization by low-temperature DNP.

  16. Synthesis of long T silicon nanoparticles for hyperpolarized Si magnetic resonance imaging

    DEFF Research Database (Denmark)

    Atkins, T.M.; Ganguly, S.; Kauzlarich, S.M.


    We describe the synthesis, materials characterization, and dynamic nuclear polarization (DNP) of amorphous and crystalline silicon nanoparticles for use as hyperpolarized magnetic resonance imaging (MRI) agents. The particles were synthesized by means of a metathesis reaction between sodium...... silicide (Na Si) and silicon tetrachloride (SiCl) and were surface functionalized with a variety of passivating ligands. The synthesis scheme results in particles of diameter ~10 nm with long size-adjusted Si spin-lattice relaxation (T) times (>600 s), which are retained after hyperpolarization by low...

  17. Material comprising two different non-metallic parrticles having different particle sizes for use in solar reactor (United States)

    Klausner, James F.; Momen, Ayyoub Mehdizadeh; Al-Raqom, Fotouh A.


    Disclosed herein is a composite particle comprising a first non-metallic particle in which is dispersed a second non-metallic particle, where the first non-metallic particle and the second non-metallic particle are inorganic; and where a chemical composition of the first non-metallic particle is different from a chemical composition of the second non-metallic particle; and where the first non-metallic particle and the second non-metallic particle are metal oxides, metal carbides, metal nitrides, metal borides, metal silicides, metal oxycarbides, metal oxynitrides, metal boronitrides, metal carbonitrides, metal borocarbides, or a combination thereof.

  18. Creep analysis of fuel plates for the Advanced Neutron Source

    Energy Technology Data Exchange (ETDEWEB)

    Swinson, W.F.; Yahr, G.T.


    The reactor for the planned Advanced Neutron Source will use closely spaced arrays of fuel plates. The plates are thin and will have a core containing enriched uranium silicide fuel clad in aluminum. The heat load caused by the nuclear reactions within the fuel plates will be removed by flowing high-velocity heavy water through narrow channels between the plates. However, the plates will still be at elevated temperatures while in service, and the potential for excessive plate deformation because of creep must be considered. An analysis to include creep for deformation and stresses because of temperature over a given time span has been performed and is reported herein.

  19. Rapid thermal processing science and technology

    CERN Document Server

    Fair, Richard B


    This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other

  20. Titanium catalyzed silicon nanowires and nanoplatelets

    Directory of Open Access Journals (Sweden)

    Mohammad A. U. Usman


    Full Text Available Silicon nanowires, nanoplatelets, and other morphologies resulted from silicon growth catalyzed by thin titanium layers. The nanowires have diameters down to 5 nm and lengths to tens of micrometers. The two-dimensional platelets, in some instances with filigreed, snow flake-like shapes, had thicknesses down to the 10 nm scale and spans to several micrometers. These platelets grew in a narrow temperature range around 900 celsius, apparently representing a new silicon crystallite morphology at this length scale. We surmise that the platelets grow with a faceted dendritic mechanism known for larger crystals nucleated by titanium silicide catalyst islands.

  1. The use of semiconductor processes for the design and characterization of a rapid thermal processor (United States)

    Hodul, David; Metha, Sandeep


    While a variety of tools are used for the design of semiconductor equipment, processes themselves are often the most informative, providing a convenient and direct method for improving both the hardware and the process. Experiments have been done to evaluate the performance of a commercial rapid thermal processing (RTP) instrument. The effects of chamber geometry and optics as well as the time/temperature recipe were probed using rapid thermal oxidation (RTO), sintering of tungsten suicide and molybdenum silicide, and partial activation of implanted ions. We show how sheet resistance and film thickness maps can be used to determine the dynamic and static temperature uniformity.

  2. Role of metal/silicon semiconductor contact engineering for enhanced output current in micro-sized microbial fuel cells

    KAUST Repository

    Mink, Justine E.


    We show that contact engineering plays an important role to extract the maximum performance from energy harvesters like microbial fuel cells (MFCs). We experimented with Schottky and Ohmic methods of fabricating contact areas on silicon in an MFC contact material study. We utilized the industry standard contact material, aluminum, as well as a metal, whose silicide has recently been recognized for its improved performance in smallest scale integration requirements, cobalt. Our study shows that improvements in contact engineering are not only important for device engineering but also for microsystems. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Properties of thin films for high temperature flow sensors (United States)

    Albin, Sacharia


    Requirements of material parameters of high temperature flow sensors are identified. Refractory metal silicides offer high temperature sensitivity and high frequency response and are stable up to 1000 C. Intrinsic semiconductors of high band gap are also considered as sensor elements. SiC and diamond are identified. Combined with substrates of low thermal and electrical conductivity, such as quartz or Al2O3, these materials meet several requirements of high sensitivity and frequency response. Film deposition and patterning techniques suitable for these materials are identified.

  4. Microwave coupler and method (United States)

    Holcombe, C. E.


    The present invention is directed to a microwave coupler for enhancing the heating or metallurgical treatment of materials within a cold-wall, rapidly heated cavity as provided by a microwave furnace. The coupling material of the present invention is an alpha-rhombohedral-boron-derivative-structure material such as boron carbide or boron silicide which can be appropriately positioned as a susceptor within the furnace to heat other material or be in powder particulate form so that composites and structures of boron carbide such as cutting tools, grinding wheels and the like can be rapidly and efficiently formed within microwave furnaces.

  5. High-Temperature Ceramic Matrix Composite with High Corrosion Resistance (United States)


    individual zirconium boride and, especially, molybdenum disilicide. STCU PROJECT P286 – FINAL REPORT PAGE 16 02-Jun-10 2...Fragment of XRD pattern for molybdenum silicide. Fig. 2.5. XRD pattern for USS-22+ 2 vol.% TaB2 hot-pressed samples. Fig. 2.6. XRD pattern for USS-22...P286 – FINAL REPORT PAGE 12 02-Jun-10 1. Introduction Ceramic borides , such as hafnium diboride (HfB2) and zirconium diboride (ZrB2

  6. Alternative Gate Dielectrics on Semiconductors for MOSFET Device Applications

    Energy Technology Data Exchange (ETDEWEB)

    Norton, D. P.; Budai, J. D.; Chisholm, M. F.; Pennycook, S. J.; McKee, R.; Walker, F.; Lee, Y.; Park, C.


    We have investigated the synthesis and properties of deposited oxides on Si and Ge for use as alternative gate dielectrics in MOSFET applications. The capacitance and leakage current behavior of polycrystalline Y{sub 2}O{sub 3} films synthesized by pulsed-laser deposition is reported. In addition, we also discuss the growth of epitaxial oxide structures. In particular, we have investigated the use of silicide termination for oxide growth on (001) Si using laser-molecular beam epitaxy. In addition, we discuss a novel approach involving the use of hydrogen to eliminate native oxide during initial dielectric oxide nucleation on (001) Ge.

  7. Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siad, M., E-mail: [Centre de Recherche Nucleaire d' Alger, 02 Bd Frantz Fanon (Algeria); Abdesselam, M. [USTHB, Faculte de Physique, BP 32, El Alia, Bab Ezzouar (Algeria); Souami, N. [Centre de Recherche Nucleaire d' Alger, 02 Bd Frantz Fanon (Algeria); Chami, A.C. [USTHB, Faculte de Physique, BP 32, El Alia, Bab Ezzouar (Algeria)


    In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950 deg. C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E{sub {alpha}} = 3.2 MeV, nuclear reaction analysis (NRA) at E{sub d} = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.

  8. Synthesis of n-type Mg2Si/CNT Thermoelectric Nanofibers (United States)

    Kikuchi, Keiko; Yamamoto, Kodai; Nomura, Naoyuki; Kawasaki, Akira


    Magnesium silicide (Mg2Si)/carbon nanotube (CNT) thermoelectric nanofibers for use as a flexible thermoelectric material were successfully synthesized through the combined processes of the sol-gel method, magnesiothermic reduction, and liquid-solid phase reaction. In the resulting product, each CNT was coated with Mg2Si which was an approximately 60-nm-thick single crystal. The synthesized Mg2Si-coated CNTs exhibited n-type thermoelectric behavior confirming that n-type thermoelectric composite nanofibers were successfully obtained.


    Directory of Open Access Journals (Sweden)

    Lily Suparlina


    Full Text Available Penggunaan bahan bakar tingkat muat tinggi dapat memperpanjang siklus operasi reaktor sampai 40 hari. Telah dilakukan perancangan konversi teras dari silisida tingkat muat rendah menuju tingkat muat tinggi. Manajemen konversi teras dari teras silisida tingkat muat 2,96 gU/cm3 menuju teras silisida 4,8 gU/cm3 dilakukan secara bertahap dengan melakukan perhitungan manajemen bahan bakar dalam teras yang menggunakan paket program perhitungan 2 dimensi Batan-FUEL. Penggantian bahan bakar di teras menggunakan pola pergeseran bahan bakar 5/1 yaitu setiap awal siklus terjadi penggantian 5 buah elemen bahan bakar standar dan 1 buah elemen bahan bakar kendali. Dengan mempertahankan konfigurasi teras yang sudah ada, konversi teras dapat dilakukan melalui simulasi teras campuran 2,96 gU/cm3 - 4,8 gU/cm3 dengan memperhatikan batasan keselamatan reaktor yang dipersyaratkan. Oleh karena itu tujuan dari penelitian ini adalah untuk merancang teras campuran yang akan menghasilkan parameter neutronik yang aman pada teras penuh pertama silisida tingkat muat tinggi. Dalam perancangan ini digunakan batang kendali pengaman untuk menambah margin padam yang berkurang akibat pemuatan bahan bakar tingkat muat tinggi. Hasil analisis menunjukkan bahwa konversi teras silisida tingkat muat 2,96 gU/cm3 menuju 4,8 gU/cm3 dapat dilakukan melalui teras campuran tidak langsung dalam 2 tahap yaitu konversi teras silisida 2,96 gU/cm3 - 3,55 gU/cm3 dan konversi teras silisida 3,55 gU/cm3 - 4,8 gU/cm3 dengan performa yang baik. Keuntungan utama dari penggunaan bahan bakar silisida tingkat muat tinggi 4,8 gU/cm3 dibanding teras silisida tingkat muat rendah 2,96 gU/cm3 pada teras RSG-GAS ialah bahwa panjang siklus operasi dapat lebih panjang 18 hari sehingga dapat menghemat penggunaan bahan bakar. Kata kunci : silisida, BKP, teras campuran, pola 5/1, Batan-FUEL   The usage of high density fuel can extend the reactor operation up to 40 days. Designing of low to high density silicide

  10. Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction

    Energy Technology Data Exchange (ETDEWEB)

    Ridgway, M.C.; Elliman, R.G.; Rao, M.R. [Australian National Univ., Canberra, ACT (Australia); Baribeau, J.M. [National Research Council of Canada, Ottawa, ON (Canada)


    Enhanced relaxation of strained Ge{sub x}Si{sub l-x} layers during the formation of CoSi{sub 2} by Co/Ge{sub x}Si{sub 1-x} thermal reaction has been observed. Raman spectroscopy and transmission electron microscopy were used to monitor the extent of relaxation. Possible mechanisms responsible for the enhanced relaxation, including metal-induced dislocation nucleation, chemical and/or structural inhomogeneities at the reacted layer/Ge{sub x}Si{sub 1-x} interface and point defect injection due to silicide formation will be discussed. Also, methodologies for inhibiting relaxation will be presented. 11 refs., 1 fig.

  11. Detection of bacterial spores with lanthanide-macrocycle binary complexes. (United States)

    Cable, Morgan L; Kirby, James P; Levine, Dana J; Manary, Micah J; Gray, Harry B; Ponce, Adrian


    The detection of bacterial spores via dipicolinate-triggered lanthanide luminescence has been improved in terms of detection limit, stability, and susceptibility to interferents by use of lanthanide-macrocycle binary complexes. Specifically, we compared the effectiveness of Sm, Eu, Tb, and Dy complexes with the macrocycle 1,4,7,10-tetraazacyclododecane-1,7-diacetate (DO2A) to the corresponding lanthanide aquo ions. The Ln(DO2A)(+) binary complexes bind dipicolinic acid (DPA), a major constituent of bacterial spores, with greater affinity and demonstrate significant improvement in bacterial spore detection. Of the four luminescent lanthanides studied, the terbium complex exhibits the greatest dipicolinate binding affinity (100-fold greater than Tb(3+) alone, and 10-fold greater than other Ln(DO2A)(+) complexes) and highest quantum yield. Moreover, the inclusion of DO2A extends the pH range over which Tb-DPA coordination is stable, reduces the interference of calcium ions nearly 5-fold, and mitigates phosphate interference 1000-fold compared to free terbium alone. In addition, detection of Bacillus atrophaeus bacterial spores was improved by the use of Tb(DO2A)(+), yielding a 3-fold increase in the signal-to-noise ratio over Tb(3+). Out of the eight cases investigated, the Tb(DO2A)(+) binary complex is best for the detection of bacterial spores.

  12. Structural Characterization and Absolute Luminescence Efficiency Evaluation of Gd2O2S High Packing Density Ceramic Screens Doped with Tb3+ and Eu3+ for further Applications in Radiology (United States)

    Dezi, Anna; Monachesi, Elenasophie; D’Ignazio, Michela; Scalise, Lorenzo; Montalto, Luigi; Paone, Nicola; Rinaldi, Daniele; Mengucci, Paolo; Loudos, George; Bakas, Athanasios; Michail, Christos; Valais, Ioannis; Fountzoula, Christine; Fountos, George; David, Stratos


    Rare earth activators are impurities added in the phosphor material to enhance probability of visible photon emission during the luminescence process. The main activators employed are rare earth trivalent ions such as Ce+3, Tb+3, Pr3+ and Eu+3. In this work, four terbium-activated Gd2O2S (GOS) powder screens with different thicknesses (1049 mg/cm2, 425.41 mg/cm2, 313 mg/cm2 and 187.36 mg/cm2) and one europium-activated GOS powder screen (232.18 mg/cm2) were studied to investigate possible applications for general radiology detectors. Results presented relevant differences in crystallinity between the GOS:Tb doped screens and GOS:Eu screens in respect to the dopant agent present. The AE (Absolute efficiency) was found to rise (i) with the increase of the X-ray tube voltage with the highest peaking at 110kVp and (ii) with the decrease of the thickness among the four GOS:Tb. Comparing similar thickness values, the europium-activated powder screen showed lower AE than the corresponding terbium-activated.

  13. Synthesis and characterization of magnetic nanoparticles of oxides for dual MnFe{sub 2}O{sub 4} bioseparation, stabilized in fatty acid and the system chitosan - Eu(TTA){sub 3}(TPPO){sub 2}. Studies on the influence of doping with Gd{sup 3+}, Tb{sup 3+}, Ho{sup 3+} e Eu{sup 3+} in structural and magnetic properties; Sintese e caracterizacao de nanoparticulas magneticas de oxidos duplos de MnFe{sub 2}O{sub 4} para biosseparacao, estabilizadas em acido graxo e recobertas pelo sistema quitosana - Eu(TTA){sub 3}(TPPO){sub 2}. Estudo da influencia da dopagem com Gd{sup 3+}, Tb{sup 3+}, Ho{sup 3+} e Eu{sup 3+} nas propriedades estruturais e magneticas

    Energy Technology Data Exchange (ETDEWEB)

    Kovacs, Thelma Antunes Rodrigues


    This work was synthesized and characterized ferrite magnetic nanoparticles manganese, using the chemical coprecipitation method. By varying the heating time under 98°C (0, 10,20,40,60 3 80 minutes), the molar percentage of doping (1, 3, 5, 7, and 10%), gadolinium, europium, terbium and holmium. Magnetic ferrite nanoparticles and manganese ferrite doped with manganese were synthesized by coprecipitation method starting with chloride solutions of metals (iron (III), manganese (II), europium (III), gadolinium (III), terbium (III) and holmium (III)) and NaOH 5mol.L{sup -1} as precipitating agent. The magnetic nanoparticles were characterized by scanning electron microscopy, infrared spectroscopy, X-ray diffraction, magnetization curves, and thermal analysis. Most of manganese ferrite particles showed superparamagnetic behavior. After the characterization it was found that the samples synthesized manganese ferrite with more than 40 minutes heating time, crystal structure showed the characteristic pattern of the inverted manganese ferrite spinel type. The stabilization of the samples in oleic acid nanoparticles produced with a hydrophobic outer layer and facilitated by coating chitosan biopolymer, since this has a positive charge. Among the doped samples there was no significant change in the magnetic behavior. Several techniques for characterizing these materials have been used such as X-ray diffraction spectrum in the infrared region, magnetization curves and thermal analysis. The resins were tested as magnetic material for the separation of biological materials. In this paper, are used as biological targets separation of bovine serum albumin. (author)

  14. Cerium fluoride nanoparticles protect cells against oxidative stress

    Energy Technology Data Exchange (ETDEWEB)

    Shcherbakov, Alexander B.; Zholobak, Nadezhda M. [Zabolotny Institute of Microbiology and Virology, National Academy of Sciences of Ukraine, Kyiv D0368 (Ukraine); Baranchikov, Alexander E. [Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Ryabova, Anastasia V. [Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow 115409 (Russian Federation); Ivanov, Vladimir K., E-mail: [Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); National Research Tomsk State University, Tomsk 634050 (Russian Federation)


    A novel facile method of non-doped and fluorescent terbium-doped cerium fluoride stable aqueous sols synthesis is proposed. Intense green luminescence of CeF{sub 3}:Tb nanoparticles can be used to visualize these nanoparticles' accumulation in cells using confocal laser scanning microscopy. Cerium fluoride nanoparticles are shown for the first time to protect both organic molecules and living cells from the oxidative action of hydrogen peroxide. Both non-doped and terbium-doped CeF{sub 3} nanoparticles are shown to provide noteworthy protection to cells against the vesicular stomatitis virus. - Highlights: • Facile method of CeF{sub 3} and CeF{sub 3}:Tb stable aqueous sols synthesis is proposed. • Naked CeF{sub 3} nanoparticles are shown to be non-toxic and to protect cells from the action of H{sub 2}O{sub 2}. • CeF{sub 3} and CeF{sub 3}:Tb nanoparticles are shown to protect living cells against the vesicular stomatitis virus.

  15. Synthesis and characterization of Tin / Titanium mixed oxide nanoparticles doped with lanthanide for biomarking; Sintese e caracterizacao de nanoparticulas de oxido misto de estanho/titanio dopadas com lantanideos para marcacao biologica

    Energy Technology Data Exchange (ETDEWEB)

    Paganini, Paula Pinheiro


    This work presents the synthesis, characterization and photo luminescent study of tin and titanium mixed oxide nanoparticles doped with europium, terbium and neodymium to be used with luminescent markers on biological systems. The syntheses were done by co-precipitation, protein sol-gel and Pechini methods and the nanoparticles were characterized by infrared spectroscopy, thermogravimetric analysis, scanning electron microscopy, X-ray diffraction and X-ray absorption spectroscopy. The photo luminescent properties studies were conducted for luminophores doped with europium, terbium and neodymium synthesized by coprecipitation method. For luminophore doped with europium it was possible to calculate the intensity parameters and quantum yield and it showed satisfactory results. In the case of biological system marking it was necessary the functionalization of these particles to allow them to bind to the biological part to be studied. So the nanoparticles were functionalized by microwave and Stoeber methods and characterized by infrared spectroscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction obtaining qualitative response of functionalization efficacy. The ninhydrin spectroscopic method was used for quantification of luminophores functionalization. The photo luminescent studies of functionalized particles demonstrate the potential applying of these luminophores as luminescent markers. (author)

  16. Fabrication of Tb3Al5O12 transparent ceramics using co-precipitated nanopowders (United States)

    Dai, Jiawei; Pan, Yubai; Wang, Wei; Luo, Wei; Xie, Tengfei; Kou, Huamin; Li, Jiang


    Terbium aluminum garnet (TAG) precursor was synthesized by a co-precipitation method from a mixed solution of terbium and aluminum nitrates using ammonium hydrogen carbonate (AHC) as the precipitant. The powders calcined at different temperatures were investigated by XRD, FTIR and FESEM in order to choose the optimal calcination temperature. Fine and low-agglomerated TAG powders with average particle size of 88 nm were obtained by calcining the precursor at 1100 °C for 4 h. Using this powder as starting material, TAG transparent ceramics were fabricated by vacuum sintering combined with hot isostatic pressing (HIP) sintering. For the sample pre-sintered at 1700 °C for 20 h with HIP post-treated at 1700 °C for 3 h, the average grain size is about 3.9 μm and the in-line transmittance is beyond 55% in the region of 500-1600 nm, reaching a maximum transmittance of 64.2% at the wavelength of 1450 nm. The Verdet constant at 633 nm is measured to be -178.9 rad T-1 m-1, which is 33% larger than that of the commercial TGG single crystal (-134 rad T-1 m-1).

  17. Incorporation of Ln-Doped LaPO4 Nanocrystals as Luminescent Markers in Silica Nanoparticles. (United States)

    van Hest, Jacobine J H A; Blab, Gerhard A; Gerritsen, Hans C; Donega, Celso de Mello; Meijerink, Andries


    Lanthanide ions are promising for the labeling of silica nanoparticles with a specific luminescent fingerprint due to their sharp line emission at characteristic wavelengths. With the increasing use of silica nanoparticles in consumer products, it is important to label silica nanoparticles in order to trace the biodistribution, both in the environment and living organisms.In this work, we synthesized LaPO4 nanocrystals (NCs) with sizes ranging from 4 to 8 nm doped with europium or cerium and terbium. After silica growth using an inverse micelle method, monodisperse silica spheres were obtained with a single LaPO4 NC in the center. We demonstrate that the size of the silica spheres can be tuned in the 25-55 nm range by addition of small volumes of methanol during the silica growth reaction. Both the LaPO4 core and silica nanocrystal showed sharp line emission characteristic for europium and terbium providing unique optical labels in silica nanoparticles of variable sizes.

  18. Magnetic phase transitions in TbFe sub 2 Al sub 1 sub 0 , HoFe sub 2 Al sub 1 sub 0 and ErFe sub 2 Al sub 1 sub 0

    CERN Document Server

    Reehuis, M; Krimmel, A; Scheidt, E W; Stüsser, N; Loidl, A; Jeitschko, W


    The magnetic order of the orthorhombic aluminides TbFe sub 2 Al sub 1 sub 0 , HoFe sub 2 Al sub 1 sub 0 and ErFe sub 2 Al sub 1 sub 0 (space group Cmcm) has been studied by specific heat and magnetic measurements, as well as by neutron powder diffraction down to 100 mK and in external fields up to 5 T. Only the rare-earth ions carry a magnetic moment. At T = 1.5 K the terbium moments in TbFe sub 2 Al sub 1 sub 0 show a square-wave modulated magnetic order with wavevector k = (0, 0.7977, 0) and a moment direction parallel to the a-axis. At a critical field of H sub c sub 1 = 0.9 T one of ten spins is forced to flip, going into an intermediate ferrimagnetic phase that is stable up to the critical field H sub c sub 2 = 1.8 T. Above this field finally all the rest of the spins flip, resulting in a ferromagnetic order of the terbium moments. ErFe sub 2 Al sub 1 sub 0 orders antiferromagnetically below T sub N 1.77(7) K with a similar magnetic structure characterized by a wavevector k (0, approx 0.8, 0). In contras...

  19. Deuteron induced Tb-155 production, a theranostic isotope for SPECT imaging and auger therapy. (United States)

    Duchemin, C; Guertin, A; Haddad, F; Michel, N; Métivier, V


    Several terbium isotopes are suited for diagnosis or therapy in nuclear medicine. Tb-155 is of interest for SPECT imaging and/or Auger therapy. High radionuclide purity is mandatory for many applications in medicine. The quantification of the activity of the produced contaminants is therefore as important as that of the radionuclide of interest. The experiments performed at the ARRONAX cyclotron (Nantes, France), using the deuteron beam delivered up to 34MeV, provide an additional measurement of the excitation function of the Gd-nat(d,x)Tb-155 reaction and of the produced terbium and gadolinium contaminants. In this study, we investigate the achievable yield for each radionuclide produced in natural gadolinium as a function of the deuteron energy. Other reactions are discussed in order to define the production route that could provide Tb-155 with a high yield and a high radionuclide purity. This article aims to improve data for the Gd-nat(d,x) reaction and to optimize the irradiation conditions required to produce Tb-155. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi2 in nanowires of Si. (United States)

    Chou, Yi-Chia; Wu, Wen-Wei; Cheng, Shao-Liang; Yoo, Bong-Young; Myung, Nosang; Chen, Lih J; Tu, K N


    The formation of CoSi and CoSi2 in Si nanowires at 700 and 800 degrees C, respectively, by point contact reactions between nanodots of Co and nanowires of Si have been investigated in situ in a ultrahigh vacuum high-resolution transmission electron microscope. The CoSi2 has undergone an axial epitaxial growth in the Si nanowire and a stepwise growth mode was found. We observed that the stepwise growth occurs repeatedly in the form of an atomic step sweeping across the CoSi2/Si interface. It appears that the growth of a new step or a new silicide layer requires an independent event of nucleation. We are able to resolve the nucleation stage and the growth stage of each layer of the epitaxial growth in video images. In the nucleation stage, the incubation period is measured, which is much longer than the period needed to grow the layer across the silicide/Si interface. So the epitaxial growth consists of a repeating nucleation and a rapid stepwise growth across the epitaxial interface. This is a general behavior of epitaxial growth in nanowires. The axial heterostructure of CoSi2/Si/CoSi2 with sharp epitaxial interfaces has been obtained. A discussion of the kinetics of supply limited and source-limited reaction in nanowire case by point contact reaction is given. The heterostructures are promising as high performance transistors based on intrinsic Si nanowires.

  1. Effect of an Ag buffer layer on a Cu/Ag/Si system

    Energy Technology Data Exchange (ETDEWEB)

    Yukawa, M.; Kitagawa, H.; Iida, S


    It is well known that Cu reacts with Si to form copper silicide, even at room temperature. To prevent copper silicide from forming on an Si substrate when Cu is used for wiring or as electrodes, it is necessary to place a buffer layer between Cu and the Si substrate. Silver works as a buffer layer between Cu and the Si substrate to form a layered Cu/Ag/Si structure. In the present paper, we determine the minimum effective Ag buffer layer thickness to prevent Cu diffusing into the Si substrate. The results show that Cu can reach the Si substrate through a 5 nm thick Ag film, but that a 50 nm film prevents Cu from diffusing through to the Si substrate. Using scanning electron microscopy (SEM) to observe the interface layer, it was found that round Ag islands form on the Si substrate, whereas Cu appears as a few large square islands and a lot of small clusters. The small Cu clusters tended to wedge into the gaps between the Ag islands. Furthermore, the results indicate that Cu and Ag repel each other.

  2. Interface Engineering to Create a Strong Spin Filter Contact to Silicon (United States)

    Caspers, C.; Gloskovskii, A.; Gorgoi, M.; Besson, C.; Luysberg, M.; Rushchanskii, K. Z.; Ležaić, M.; Fadley, C. S.; Drube, W.; Müller, M.


    Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface: (i) an in situ hydrogen-Si (001) passivation and (ii) the application of oxygen-protective Eu monolayers-without using any additional buffer layers. By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime-and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si (001) in order to create a strong spin filter contact to silicon.

  3. Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

    Directory of Open Access Journals (Sweden)

    Noor Faizah Z.A.


    Full Text Available This paper presents the modeling and optimization of 14nm gate length CMOS transistor which is down-scaled from previous 32nm gate length. High-k metal gate material was used in this research utilizing Hafnium Dioxide (HfO2 as dielectric and Tungsten Silicide (WSi2 and Titanium Silicide (TiSi2 as a metal gate for NMOS and PMOS respectively. The devices are fabricated virtually using ATHENA module and characterized its performance evaluation via ATLAS module; both in Virtual Wafer Fabrication (VWF of Silvaco TCAD Tools. The devices were then optimized through a process parameters variability using L9 Taguchi Method. There were four process parameter with two noise factor of different values were used to analyze the factor effect. The results show that the optimal value for both transistors are well within ITRS 2013 prediction where VTH and IOFF are 0.236737V and 6.995705nA/um for NMOS device and 0.248635 V and 5.26nA/um for PMOS device respectively.

  4. Novel Accident-Tolerant Fuel Meat and Cladding

    Energy Technology Data Exchange (ETDEWEB)

    Robert D. Mariani; Pavel G Medvedev; Douglas L Porter; Steven L Hayes; James I. Cole; Xian-Ming Bai


    A novel accident-tolerant fuel meat and cladding are here proposed. The fuel meat design incorporates annular fuel with inserts and discs that are fabricated from a material having high thermal conductivity, for example niobium. The inserts are rods or tubes. Discs separate the fuel pellets. Using the BISON fuel performance code it was found that the peak fuel temperature can be lowered by more than 600 degrees C for one set of conditions with niobium metal as the thermal conductor. In addition to improved safety margin, several advantages are expected from the lower temperature such as decreased fission gas release and fuel cracking. Advantages and disadvantages are discussed. An enrichment of only 7.5% fully compensates the lost reactivity of the displaced UO2. Slightly higher enrichments, such as 9%, allow uprates and increased burnups to offset the initial costs for retooling. The design has applications for fast reactors and transuranic burning, which may accelerate its development. A zirconium silicide coating is also described for accident tolerant applications. A self-limiting degradation behavior for this coating is expected to produce a glassy, self-healing layer that becomes more protective at elevated temperature, with some similarities to MoSi2 and other silicides. Both the fuel and coating may benefit from the existing technology infrastructure and the associated wide expertise for a more rapid development in comparison to other, more novel fuels and cladding.

  5. Structural and electronic properties of XSi{sub 2} (X = Cr, Mo, and W)

    Energy Technology Data Exchange (ETDEWEB)

    Shugani, Mani, E-mail: [Sadhu Vaswani College, Bairagarh, Department of Physics (India); Aynyas, Mahendra [C. S. A. Govt. P. G. College, Department of Physics (India); Sanyal, S. P. [Barkatullah University, Department of Physics (India)


    The structural and electronic properties of metal silicides XSi{sub 2} (X = Cr, Mo, and W), which crystallize in tetragonal structure, are investigated systematically using the first-principle density functional theory. The total energies are computed as a function of volume and fitted to the Birch equation of state. The ground-state properties such as equilibrium lattice constants a{sub 0} and c{sub 0}, bulk modulus B, its pressure derivative B, B′, and the density of states at the Fermi level, N(E{sub F}), are calculated and compared with other experimental and theoretical results, showing good agreement. The calculated band structure indicates that XSi{sub 2} compounds are semimetallic in nature. From the present study, we predict the structural and electronic properties of CrSi{sub 2} in the tetragonal phase and indicate that CrSi{sub 2} is energetically more stable than MoSi{sub 2} and WSi{sub 2}. Analyzing the bonding properties of the three metal silicides, we observe that WSi{sub 2} has a strong covalent bonding due to W 5d electrons.

  6. The effect of the rapid thermal annealing on the interdiffusion and the reaction at the interface of the binary system Cr/Si

    Energy Technology Data Exchange (ETDEWEB)

    Merabet, A. [Laboratoire Physique et Mecanique des Materiaux Metalliques, Departement d' O.M.P., Faculte des Sciences de l' Ingenieur, Universite de Setif, Setif 19000 (Algeria)]. E-mail:


    In order to understand the growth mechanism of the silicides and the effect of the dopant on the electrical activity, a thin layer of chromium (100 nm) is deposited on the single crystal silicon (1 0 0) substrate implanted (10{sup 15} As{sup +} atoms/cm{sup 2}, 100 keV) and non implanted. Afterwards, we performed a rapid thermal annealing in the interval of temperature (450-600 deg. C) for a fixed duration of 45 s. The samples are analyzed by X ray-diffraction (XRD) and Rutherford backscattering spectrometry (RBS). The electrical activity has been investigated by the method of the four-point probes. The analysis of the samples by XRD and RBS showed that the rapid thermal annealing (RTA) leads to a reaction at the interface Cr/Si inducing the formation and the growth of the unique silicide CrSi{sub 2}. It is also established that the kinetics growth of CrSi{sub 2} presents a linear evolution with temperature. This fact shows that the growth is governed by a chemical reaction of the interface. Sheet resistance measurements have been performed to study the electrical behavior for these structures. It is worth to point out that the presence of the implanted arsenic in the single crystal silicon increased the resistance in a significant manner.

  7. Electronic structure of ceramic CrSi2 and WSi2: Compton spectroscopy and ab-initio calculations (United States)

    Bhamu, K. C.; Sahariya, Jagrati; Ahuja, B. L.


    We report electron momentum densities of stable phases of transition metal disilicides CrSi2 (C40 hexagonal) and WSi2 (C11b body centered tetragonal) using a high energy 137Cs Compton spectrometer. To support the experimental investigations, we have computed theoretical Compton profiles, energy bands and density of states of both the isoelectronic compounds using density functional theory within linear combination of atomic orbitals. Theoretical calculations for the energy bands and density of states are performed for both the hexagonal and tetragonal phases of these silicides. In the tetragonal phase, both the silicides show metallic behavior. The hexagonal CrSi2 shows an energy gap (0.28 eV) between the valence band maximum at the L point and the conduction band minimum at the M point of the Brillouin zone, whereas the hexagonal WSi2 shows a semimetallic character. We have also scaled the experimental and theoretical profiles of the stable phases (hexagonal for CrSi2 and tetragonal for WSi2) on equal-valence-electron-density, which show more covalent character of WSi2 than that of CrSi2. The nature of bonding is in accordance with a present Mulliken's population analysis.

  8. Materials and device issues in the formation of sub-100-nm junctions (United States)

    Osburn, C. M.; Chevacharoenkul, S.; Wang, Q. F.; Markus, K.; McGuire, G. E.; Smith, P. L.


    This paper compares the materials and device issues associated with two alternative techniques for the formation of ultrashallow junctions: 1) the use of preamorphization and low energy dopant implantation, combined with rapid, low-temperature annealing; and 2) the use of metal suicides as a diffusion source (SADS) where dopants are implanted into CoSi 2 and subsequently diffused into silicon. For conventionally-formed, ultrashallow junctions, preamorphization with either silicon or germanium does not result in shallower junctions. The enhanced diffusion associated with the preamorphization implant damage compensates for the reduction in channeling. Preamorphization does, however, give low sheet resistance junctions and high dopant activation after recrystallization at 550°C. Considerable dopant motion (˜ 50 nm) is observed in the tail region, near the junction, after 10 s of annealing at a relatively low temperature (800°C). The SADS process is seen to produce low leakage n + and p + diodes with less than 10 nm of dopant diffusion beyond the silicide/silicon interface, using a very low thermal budget process. By confining the implantation to within the suicide, no crystal defects are created in the underlying silicon. With the SADS process, the limitation on scaling the junction depth lies in producing thin, stable suicide films. Agglomeration of the silicide and pullback along feature edges restrict the maximum thermal cycle and the minimum allowable film thickness.

  9. Technology for manufacturing dispersion nuclear fuel at IPEN/CNEN-SP

    Energy Technology Data Exchange (ETDEWEB)

    Durazzo, Michelangelo; Souza, Jose Antonio Batista de; Carvalho, Elita Fontenele Urano de; Saliba-Silva, Adonis Marcelo; Riella, Humberto Gracher, E-mail: [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)


    IPEN/CNEN-SP has been working for increasing radioisotope production in order to supply the expanding demand for radiopharmaceutical medicines requested by the Brazilian welfare. To reach this objective, the IPEN's IEA-R1 research reactor power capacity has been continuously increased starting from 2 MW aiming to reach 5 MW. In addition, another research reactor with power substantially greater than that of the IEA-R1 will be constructed in Brazil, the Brazilian Multipurpose Reactor - RMB. Since 1988, IPEN has been manufacturing its own fuel element, initially based on U{sub 3}O{sub 8}-Al dispersion fuel plates with 2.3 g U/cm{sup 3}. To support the reactor power increase and the new research reactor, higher uranium density into the fuel had to be achieved for better irradiation flux and also to minimize the irradiated fuel elements to be stored. Uranium silicide was the first chosen option. The U-Mo alloy is considered for future use. This paper describes the results of this program and the current status of silicide fuel fabrication and qualification, as well as the status of U Mo-Al dispersion fuel development. (author)

  10. Isothermal and cyclic oxidation resistance of pack siliconized Mo–Si–B alloy

    Energy Technology Data Exchange (ETDEWEB)

    Majumdar, Sanjib, E-mail:


    Highlights: • Pack-siliconizing of Mo–Si–B alloy improves its oxidation resistance at 750, 900 and 1400 °C. • A marginal weight change of the coated alloy is detected in isothermal and cyclic oxidation tests. • Kinetics of growth of protective SiO{sub 2} scale is much faster at 1400 °C. • Self-healing SiO{sub 2} is developed at the cracks formed in MoSi{sub 2} layer during cyclic oxidation tests. - Abstract: Oxidation behaviour of MoSi{sub 2} coated Mo–9Si–8B–0.75Y (at.%) alloy has been investigated at three critical temperatures including 750, 900 and 1400 °C in static air. Thermogravimetric analysis (TGA) data indicates a remarkable improvement in the oxidation resistance of the silicide coated alloy in both isothermal and cyclic oxidation tests. The cross-sectional scanning electron microscopy and energy dispersive spectroscopic analysis reveal the occurrence of internal oxidation particularly at the crack fronts formed in the outer MoSi{sub 2} layer during thermal cycling. The dominant oxidation mechanisms at 750–900 °C and 1400 °C are identified. Development of MoB inner layer further improves the oxidation resistance of the silicide coated alloy.

  11. Enhancement of carrier collection efficiency in photodiodes by introducing a salicided polysilicon contact (United States)

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron


    Suppressing recombination on silicon contact interfaces is a topic being addressed for various applications such as photo sensors and solar cells. Although salicidation of the contacts enables low contact resistance, it is usually avoided for these applications as it increases the recombination rate on the contact interfaces. This study explores the use of salicided polysilicon buffer layer in photodiodes' contacts, acting to reduce the recombination rate at the silicide contact. The contact incorporates the advantage of low contact resistance due to silicidation with polysilicon interface that reduces recombination by creating carrier selective junction. The introduction of a polysilicon interlayer was found to increase the short circuit current and the fill factor and to decrease the dark leakage current. The improvement in the light collection parameters was found to be more pronounced under high light intensity (1000 W/m2) than under low light intensity (400 W/m2). The benevolent effect of the polysilicon interlayer is expected to be noticed in devices that are sensitive to contacts' performance. This includes not only image sensors but also high efficiency silicon solar cells.

  12. Impurity Precipitation, Dissolution, Gettering and Passivation in PV Silicon: Final Technical Report, 30 January 1998--29 August 2001

    Energy Technology Data Exchange (ETDEWEB)

    Weber, E. R.


    This report describes the major progress in understanding the physics of transition metals in silicon and their possible impact on the efficiency of solar cells that was achieved during the three-year span of this subcontract. We found that metal-silicide precipitates and dissolved 3d transition metals can be relatively easily gettered. Gettering and passivating treatments must take into account the individuality of each transition metal. Our studies demonstrated how significant is the difference between defect reactions of copper and iron. Copper does not significantly affect the minority-carrier diffusion length in p-type silicon, at least as long as its concentration is low, but readily precipitates in n-type silicon. Therefore, copper precipitates may form in the area of p-n junctions and cause shunts in solar cells. Fortunately, copper precipitates are present mostly in the chemical state of copper-silicide and can relatively easily be dissolved. In contrast, iron was found to form clusters of iron-oxides and iron-silicates in the wafers. These clusters are thermodynamically stable even in high temperatures and are extremely difficult to remove. The formation of iron-silicates was observed at temperatures over 900C.

  13. Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA (United States)

    Youwei, Zhang; Dawei, Xu; Li, Wan; Zhongjian, Wang; Chao, Xia; Xinhong, Cheng; Yuehui, Yu


    Nickel fully silicided (Ni-FUSI) gate material has been fabricated on a HfO2 surface to form a Ni-FUSI gate/HfO2/Si/Al (MIS) structure by using an ultra-high vacuum e-beam evaporation (EBV) method followed by a one step rapid thermal annealing (RTA) treatment. X-ray diffraction (XRD) and Raman spectroscopy were used to reveal the microstructures and electrical properties of the MIS structure. Results show that a one step post RTA treatment is enough to promote the full reaction of nickel silicide, compared with multiple RTA treatments. Furthermore, the HfO2 gate dielectric film is sensitive to heat treatment, and multiple RTA treatments can damage the electrical properties of the HfO2 film rather than improve them. By optimization of the sample fabrication technique, the MIS capacitor produces good high-frequency capacitance-voltage curves with a hysteresis of 30 mV, a work function of about 5.44-5.53 eV and leakage current density of only 1.45 × 10-8 A/cm2 at -1 V gate bias.

  14. Schottky-barrier heights of single-crystal NiSi2 on Si(111): The effect of a surface p-n junction (United States)

    Tung, R. T.; Ng, K. K.; Gibson, J. M.; Levi, A. F. J.


    Current-voltage, capacitance-voltage, and activation-energy measurements obtained for epitaxial nickel silicides grown on Si(111) have exposed the importance of the temperature used to flash-evaporate oxide off the surface prior to metal deposition. Near-ideal behavior is found for Schottky barriers grown on substrates cleaned at ~820 °C in ultrahigh vacuum. The Fermi-level positions at the interfaces of single-crystal type-A and type-B NiSi2 are shown to differ by greater than 100 meV. Transmission electron microscopy demonstrated the epitaxial perfection of these silicide layers. At a cleaning temperature of 1050 °C, the apparent Schottky-barrier heights increased substantially for substrates with a doping concentration of ND less than approximately 1015 cm-3. This increase is due to the conversion of the n-type semiconductor surface region to p type during the 1050 °C anneal. The presence of this p-n junction results in a high apparent Schottky-barrier height (>~0.75 eV) which no longer bears an immediate relationship to the interface Fermi-level position. Recent discrepancies reported by different groups concerning the barrier heights of NiSi2 on Si(111) are attributed to this effect.

  15. Effect of acid leaching conditions on impurity removal from silicon doped by magnesium

    Directory of Open Access Journals (Sweden)

    Stine Espelien


    Full Text Available The effect of magnesium addition into a commercial silicon and its leaching refining behavior is studied for producing solar grade silicon feedstock. Two different levels of Mg is added into a commercial silicon and the leaching of the produced alloys by 10% HCl solution at 60 ℃ for different durations is performed. It is shown that the microstructure of the alloy and in particular the distribution of eutectic phases is dependent on the amount of the added Mg. Moreover, the metallic impurities in silicon such as Fe, Al, Ca and Ti are mainly forming silicide particles with different compositions. These silicides are physically more detached from the primary silicon grains and their removal through chemical and physical separation in leaching is better for higher Mg additions. It is observed that the leaching is more effective for the purification of smaller silicon particles produced from each Mg-doped silicon alloy. It is shown that acid leaching by the applied method is effective to reach more than 70% of phosphorous removal. It is also shown that the purity of silicon is dependent on the total Mg removal and effectiveness of leaching on removing the Mg2Si phase.

  16. Rapid microwaves synthesis of CoSix/CNTs as novel catalytic materials for hydrogenation of phthalic anhydride (United States)

    Zhang, Liangliang; Chen, Xiao; Jin, Shaohua; Guan, Jingchao; Williams, Christopher T.; Peng, Zhijian; Liang, Changhai


    CoSix/CNTs catalysts with different CoSix phases (CoSi, CoSi2) have been rapidly synthesized via a microwave-assisted route and applied for the liquid phase hydrogenation of phthalic anhydride. The synthesized catalysts were analyzed and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy-energy dispersive X-ray spectroscopy, thermogravimetric/derivative thermogravimetric analysis. The reaction progress of cobalt silicides and the ratio of Co:Si were monitored at different microwave irradiation times by XRD, giving insight into the formation mechanism. Compared to the Co/CNTs catalyst, all the prepared CoSix/CNTs catalysts exhibited excellent activity and good selectivity to phthalide under mild reaction conditions (180-220 °C and 4.0 MPa H2). This novel methodology can be applied to the synthesis of other transition metal silicides such as FeSi, Ni2Si, and Cu4Si.

  17. Interfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing (United States)

    Lai, Kuei-Chang; Wu, Pei-Yu; Chen, Chih-Ming; Wei, Tzu-Chien; Wu, Chung-Han; Feng, Shien-Ping


    Front-side metallization of a Si wafer was carried out using electroless deposition of nickel-phosphorus (Ni-P) catalyzed by polyvinylpyrrolidone-capped palladium nanoclusters (PVP-nPd). A 3-[2-(2-Aminoethylamino)ethylamino] propyl-trimethoxysilane (ETAS) layer was covalently bonded on the Si surface as bridge linker to the Pd cores of PVP-nPd clusters for improving adhesion between the Ni-P layer and the Si surface. To investigate the effects of an interfacial ETAS layer on the Ni silicide formation at the Ni-P/Si contact, the Ni-P-coated Si samples were thermally annealed via rapid thermal annealing (RTA) from 500°C to 900°C for 2 min. To compare with the ETAS sample, the sputtered Ni layer on Si and electroless Ni-P layer on ion-Pd-catalyzed Si (both are standard processes) were also investigated. The microstructural characterizations for the Ni-P or Ni layer deposited on the Si wafer were performed using x-ray diffractometer, scanning electron microscopy, and transmission electron microscopy. Our results showed that the ETAS layer acted as a barrier to slow the atomic diffusion of Ni toward the Si side. Although the formation of Ni silicides required a higher annealing temperature, the adhesion strength and contact resistivity measurements of annealed Ni-P/Si contacts showed satisfactory results, which were essential to the device performance and reliability during thermal annealing.

  18. Pack cementation coatings for alloys

    Energy Technology Data Exchange (ETDEWEB)

    He, Yi-Rong; Zheng, Minhui; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States)


    The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating on a Cr-Cr{sub 2}Nb alloy in a single processing step. The morphology and composition of the coating depended both on the composition of the pack and on the composition and microstructure of the substrate. Higher Ge content in the pack suppressed the formation of CrSi{sub 2} and reduced the growth kinetics of the coating. Ge was not homogeneously distributed in the coatings. In cyclic and isothermal oxidation in air at 700 and 1050{degrees}C, the Ge-doped silicide coating protected the Cr-Nb alloys from significant oxidation by the formation of a Ge-doped silica film. The codeposition and diffusion of aluminum and chromium into low alloy steel have been achieved using elemental Al and Cr powders and a two-step pack cementation process. Sequential process treatments at 925{degrees}C and 1150{degrees}C yield dense and uniform ferrite coatings, whose compositions are close to either Fe{sub 3}Al or else FeAl plus a lower Cr content, when processed under different conditions. The higher content of Al in the coatings was predicted by thermodynamic calculations of equilibrium in the gas phase. The effect of the particle size of the metal powders on the surface composition of the coating has been studied for various combinations of Al and Cr powders.

  19. Nanostructured TiO{sub x} film on Si substrate: room temperature formation of TiSi{sub x} nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Chiodi, Mirco, E-mail:; Cavaliere, Emanuele; Kholmanov, Iskandar [Universita Cattolica del Sacro Cuore di Brescia, Dipartimento di Matematica e Fisica (Italy); Simone, Monica de; Sakho, Oumar; Cepek, Cinzia [CNR-INFM, Laboratorio Nazionale TASC (Italy); Gavioli, Luca [Universita Cattolica del Sacro Cuore di Brescia, Dipartimento di Matematica e Fisica (Italy)


    We present a morphologic and spectroscopic study of cluster-assembled TiO{sub x} films deposited by supersonic cluster beam source on clean silicon substrates. Data show the formation of nanometer-thick and uniform titanium silicides film at room temperature (RT). Formation of such thick TiSi{sub x} film goes beyond the classical interfacial limit set by the Ti/Si diffusion barrier. The enhancement of Si diffusion through the TiO{sub x} film is explained as a direct consequence of the porous film structure. Upon ultra high vacuum annealing beyond 600 {sup o}C, TiSi{sub 2} is formed and the oxygen present in the film is completely desorbed. The morphology of the nanostructured silicides is very stable for thermal treatments in the RT-1000 {sup o}C range, with a slight cluster size increase, resulting in a film roughness an order of magnitude smaller than other TiO{sub x}/Si and Ti/Si films in the same temperature range. The present results might have a broad impact in the development of new and simple TiSi synthesis methods that favour their integration into nanodevices.

  20. Surface enhanced Raman spectroscopy platform based on graphene with one-year stability

    Energy Technology Data Exchange (ETDEWEB)

    Tite, Teddy [Univ Lyon, UJM-Saint-Etienne, CNRS, Laboratoire Hubert Curien UMR 5516, 18 rue Professeur Benoit Lauras, F-42000 Saint-Etienne (France); Barnier, Vincent [Ecole Nationale Supérieure des Mines, CNRS, Laboratoire Georges Friedel UMR 5307, 158 cours Fauriel, F-42023 Saint-Etienne (France); Donnet, Christophe, E-mail: [Univ Lyon, UJM-Saint-Etienne, CNRS, Laboratoire Hubert Curien UMR 5516, 18 rue Professeur Benoit Lauras, F-42000 Saint-Etienne (France); Loir, Anne–Sophie; Reynaud, Stéphanie; Michalon, Jean–Yves; Vocanson, Francis; Garrelie, Florence [Univ Lyon, UJM-Saint-Etienne, CNRS, Laboratoire Hubert Curien UMR 5516, 18 rue Professeur Benoit Lauras, F-42000 Saint-Etienne (France)


    We report the synthesis, characterization and use of a robust surface enhanced Raman spectroscopy platform with a stable detection for up to one year of Rhodamine R6G at a concentration of 10{sup −6} M. The detection of aminothiophenol and methyl parathion, as active molecules of commercial insecticides, is further demonstrated at concentrations down to 10{sup −5}–10{sup −6} M. This platform is based on large scale textured few-layer (fl) graphene obtained without any need of graphene transfer. The synthesis route is based on diamond-like carbon films grown by pulsed laser deposition, deposited onto silicon substrates covered by a Ni layer prior to diamond-like carbon deposition. The formation of fl-graphene film, confirmed by Raman spectroscopy and mapping, is obtained by thermal annealing inducing the diffusion of Ni atoms and the concomitant formation of nickel silicide compounds, as identified by Raman and Auger electron spectroscopies. The textured fl-graphene films were decorated with gold nanoparticles to optimize the efficiency of the SERS device to detect organic molecules at low concentrations. - Highlights: • Synthesis of graphene film from amorphous carbon by pulsed laser deposition with nickel catalyst • Large scale textured graphene with nanoscale roughness obtained through nickel silicide formation • Films used for surface enhanced Raman spectroscopy detection of organophosphate compounds • Stability of the SERS platforms over up to one year.