Systems of pyridine, piperidine, piperazine, morpholine hydrochlorides-terbium (dysprosium) chloride-water

International Nuclear Information System (INIS)

Gajfutdinova, R.K.; Sharafutdinova, A.A.; Murinov, Yu.I.

1988-01-01

The isothermal cross section method at 25 and 50 deg C is applied to study pyridine hydrochloride-terbium chloride-water (1) piperidine hydrochloride-dysprosium chloride-water (2), piperazine dihydrochloride-dysprosium chloride-water (3) and morpholine hydrochloride-terbium chloride (4) systems. Solubility isotherma prove the formation of incongruently soluble compound of the TbCl 3 x6C 5 H 5 NxHCl composition systems (1). The individuality of the new solid phase is proved by the chemical and DTA methods. Systems (2-4) are of a simple eutonic type

Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

Energy Technology Data Exchange (ETDEWEB)

Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

1990-12-01

Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

OpenAIRE

Roeckerath, M.; Lopes, J. M. J.; Durgun Özben, E.; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D.G.

2010-01-01

Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of < 1 nA/cm(2). Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated ...

Infrared X-ray and thermal analysis of terbium soaps

International Nuclear Information System (INIS)

Mehrotra, K.N.; Sharma, N.

1996-01-01

Terbium sops (laureate, myristate and palmitate) were synthesized by direct metathesis of corresponding potassium soap with an aqueous solution of terbium nitrate. The physico-chemical characteristics of soaps in solid state were investigated by IR spectra, X-ray diffraction patterns and TGA measurements. The IR results revealed that the fatty acids exist in dimeric state through hydrogen bonding while the soaps possess partial ionic character. The X-ray analysis showed that the soaps have double layer structure with molecular axes slightly inclined to the basal plane. The thermal analysis suggested that the decomposition of soaps occur in two steps. The energy of activation, order of reaction and various kinetic parameters (i.e. frequency factor, entropy of activation and free energy) for the thermal decomposition of soaps were evaluated. (author). 26 refs, 4 figs, 4 tabs

Synthesis and novel fluorescence phenomenon of terbium(III) complex with N, N',N' -tris (2-benzimidazolmethyl) amine

International Nuclear Information System (INIS)

Yang, Tianlin; Gao, Min; Yang, Jinhui; Qin, Wenwu

2010-01-01

A benzimidazole ligand with a tripodal structure, N, N', N' -tris (2-benzimidazolmethyl) amine, and its terbium (III) complex has been synthesized. The complex has been characterized by element analysis, IR spectra, mass spectra, thermal analysis and molar conductivity. The terbium ion is found to coordinate with the nitrogen atoms (= N-) of imidazole ring and the bridgehead nitrogen atom. The fluorescence properties of the complex in aqueous solutions have been studied. Under excitation of UV light, the complex exhibits characteristic fluorescence of terbium ion. The luminescence of terbium complex in aqueous solutions is strongly enhanced by H + concentration. This phenomenon makes the new complex favorable for use in fluorescence switches and sensors. The mechanism of the fluorescence enhancement by protonation of the nitrogen atoms (-NH-) of imidazole ring is due to the suppressed photoinduced electron transfer fluorescence quenching on addition of acid. (author)

Nuclear magnetic resonance in ferromagnetic terbium metal

International Nuclear Information System (INIS)

Cha, C.L.T.

1974-01-01

The magnetic properties of terbium were studied by the method of zero field nuclear magnetic resonance at 1.5 to 4 and 85 to 160 0 K. Two unconventional experimental techniques have been employed: the swept frequency and the swept temperature technique. Near 4 0 K, triplet resonance line structures were found and interpreted in terms of the magnetic domain and wall structures of ferromagnetic terbium. In the higher temperature range, temperature dependence of the resonance frequency and the quadrupole splitting were measured. The former provides a measurement of the temperature dependence of the magnetization M, and it agrees with bulk M measurements as well as the latest spin wave theory of M(T) (Brooks 1968). The latter agrees well with a calculation using a very general single ion density matrix for collective excitations (Callen and Shtrikman 1965). In addition, the small temperature-independent contribution to the electric field gradient at the nucleus due to the lattice and conduction electrons was untangled from the P(T) data. Also an anomalous and unexplained relaxation phenomenon was also observed

Terbium nitrate luminescence quenching by eosin in he presence of lithium perchlorate in sulfolane solutions

International Nuclear Information System (INIS)

Ostakhov, S.S.; Kolosnitsyn, V.S.; Krasnogorskaya, N.N.; Kazakov, V.P.

2000-01-01

Quenching of terbium nitrate luminescence by anionic dye, eosin, in the presence of lithium perchlorate in sulfolane solutions was studied. Temperature dependence of terbium nitrate luminescence in sulfolane solutions in the presence of perchlorate anions were considered. The values of energy required for water molecular substitution in Tb 3+ ion coordination sphere for solvent molecule in electrolyte solution were ascertained [ru

Semiconductor composition containing iron, dysprosium, and terbium

Science.gov (United States)

Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.; Malasi, Abhinav; Taz, Humaira; Farah, Annettee E.; Kalyanaraman, Ramakrishnan; Duscher, Gerd Josef Mansfred; Patel, Maulik K.

2017-09-26

An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

Low-temperature thermal conductivity of terbium-gallium garnet

International Nuclear Information System (INIS)

Inyushkin, A. V.; Taldenkov, A. N.

2010-01-01

Thermal conductivity of paramagnetic Tb 3 Ga 5 O 12 (TbGG) terbium-gallium garnet single crystals is investigated at temperatures from 0.4 to 300 K in magnetic fields up to 3.25 T. A minimum is observed in the temperature dependence κ(T) of thermal conductivity at T min = 0.52 K. This and other singularities on the κ(T) dependence are associated with scattering of phonons from terbium ions. The thermal conductivity at T = 5.1 K strongly depends on the magnetic field direction relative to the crystallographic axes of the crystal. Experimental data are considered using the Debye theory of thermal conductivity taking into account resonance scattering of phonons from Tb 3+ ions. Analysis of the temperature and field dependences of the thermal conductivity indicates the existence of a strong spin-phonon interaction in TbGG. The low-temperature behavior of the thermal conductivity (field and angular dependences) is mainly determined by resonance scattering of phonons at the first quasi-doublet of the electron spectrum of Tb 3+ ion.

Structural, elastic, mechanical and thermodynamic properties of Terbium oxide: First-principles investigations

Directory of Open Access Journals (Sweden)

Samah Al-Qaisi

Full Text Available First-principles investigations of the Terbium oxide TbO are performed on structural, elastic, mechanical and thermodynamic properties. The investigations are accomplished by employing full potential augmented plane wave FP-LAPW method framed within density functional theory DFT as implemented in the WIEN2k package. The exchange-correlation energy functional, a part of the total energy functional, is treated through Perdew Burke Ernzerhof scheme of the Generalized Gradient Approximation PBEGGA. The calculations of the ground state structural parameters, like lattice constants a0, bulk moduli B and their pressure derivative B′ values, are done for the rock-salt RS, zinc-blende ZB, cesium chloride CsCl, wurtzite WZ and nickel arsenide NiAs polymorphs of the TbO compound. The elastic constants (C11, C12, C13, C33, and C44 and mechanical properties (Young’s modulus Y, Shear modulus S, Poisson’s ratio σ, Anisotropic ratio A and compressibility β, were also calculated to comprehend its potential for valuable applications. From our calculations, the RS phase of TbO compound was found strongest one mechanically amongst the studied cubic structures whereas from hexagonal phases, the NiAs type structure was found stronger than WZ phase of the TbO. To analyze the ductility of the different structures of the TbO, Pugh’s rule (B/SH and Cauchy pressure (C12–C44 approaches are used. It was found that ZB, CsCl and WZ type structures of the TbO were of ductile nature with the obvious dominance of the ionic bonding while RS and NiAs structures exhibited brittle nature with the covalent bonding dominance. Moreover, Debye temperature was calculated for both cubic and hexagonal structures of TbO in question by averaging the computed sound velocities. Keywords: DFT, TbO, Elastic properties, Thermodynamic properties

Rutherford backscatter measurements on tellurium and cadmium implanted gallium arsenide

International Nuclear Information System (INIS)

Bell, E.C.

1979-10-01

The primary aim of the work described in this thesis was to examine implanted layers of the dopant impurities cadmium and tellurium in gallium arsenide and to experimentally assess their potential for producing electrically active layers. 1.5 MeV Rutherford backscattering measurements of lattice disorder and atom site location have been used to assess post implantation thermal annealing and elevated temperature implantations to site the dopant impurities on either gallium or arsenic lattice positions in an otherwise undisordered lattice. Pyrolitically deposited silicon dioxide was used as an encapsulant to prevent thermal dissociation of the gallium arsenide during annealing. It has been shown that high doses of cadmium and tellurium can be implanted without forming amorphous lattice disorder by heating the gallium arsenide during implantation to relatively low temperatures. Atom site location measurements have shown that a large fraction of a tellurium dose implanted at 180 0 C is located on or near lattice sites. Channeled backscatter measurements have shown that there is residual disorder or lattice strain in gallium arsenide implanted at elevated temperatures. The extent of this disorder has been shown to depend on the implanted dose and implantation temperature. The channeling effect has been used to measure annealing of the disorder. (author)

Automated spectrofluorimetric determinations of terbium and dysprosium in rare earth mixtures

Energy Technology Data Exchange (ETDEWEB)

Lyle, S.J.; Za' tar, N. (Kent Univ., Canterbury (UK))

1983-12-01

Several methods involving the use of water-soluble binary and ternary complexes have been proposed for the spectrofluorimetric determination based on terbium(III) emission at 545 nm. These are terbium(III) with (A) ethylenediamine-N,N'-bis(o-hydroxyphenylacetic acid), (B) o-hydroxyphenyliminodiacetic acid, (C) EDTA + 5-sulphosalicylic acid, (D) EDTA + 1,2-dihydroxybenzene-3,5-disulphonic acid disodium salt (Tiron), and (E) iminodiacetic acid (IDA) + Tiron. Two of the reagent mixtures (D and E) can also be used for the fluorimetric determination of dysprosium(III) at 582 nm. A comparison has been made of these methods in order to select the most satisfactory procedure with respect to selectivity, sensitivity and suitability for adaption to automatic operation. Results are given and discussed.

Characterization of antibody-chelator conjugates: Determination of chelator content by terbium fluorescence titration

Energy Technology Data Exchange (ETDEWEB)

Brandt, K.D.; Schnobrich, K.E.; Johnson, D.K. (Abbott Laboratories, Department 90M, Abbott Park, IL (United States))

1991-01-01

Fluorescence titrations were performed by adding varying mole ratios of terbium(III) to antibody conjugates formed by benzyl isothiocyanate derivatives of three different polyaminopolycarboxylate chelators (NTA, EDTA, and DTPA) and the results compared to values for average chelator content obtained by cobalt-57 binding assays. For two different murine monoclonal antibodies, the average chelator content obtained by terbium fluorescence titration correlated closely with that measured by the cobalt-57 binding assay. It is concluded that lanthanide fluorescence titrations provide a useful alternative to radiometal binding assays for the determination of chelator content in protein-chelator conjugates.

Characterization of antibody-chelator conjugates: Determination of chelator content by terbium fluorescence titration

International Nuclear Information System (INIS)

Brandt, K.D.; Schnobrich, K.E.; Johnson, D.K.

1991-01-01

Fluorescence titrations were performed by adding varying mole ratios of terbium(III) to antibody conjugates formed by benzyl isothiocyanate derivatives of three different polyaminopolycarboxylate chelators (NTA, EDTA, and DTPA) and the results compared to values for average chelator content obtained by cobalt-57 binding assays. For two different murine monoclonal antibodies, the average chelator content obtained by terbium fluorescence titration correlated closely with that measured by the cobalt-57 binding assay. It is concluded that lanthanide fluorescence titrations provide a useful alternative to radiometal binding assays for the determination of chelator content in protein-chelator conjugates

X-ray fluorescence analysis of terbium oxide for rare earth impurities

International Nuclear Information System (INIS)

Chandola, L.C.; Machado, I.J.; Mohile, A.N.

1975-01-01

A method for the determination of Sm 2 O 3 , Eu 2 O 3 , Gd 2 O 3 , Dy 2 O 3 , Ho 2 O 3 and Y 2 O 3 in terbium oxide is described. The sample is converted to terbium oxalate, mixed with boric acid binder in the ratio 2:1, pelleted at a pressure of 20 tons over a boric acid backing pellet and irradiated with x-rays from a tungsten tube operated by Philips PW 1140 generator. The secondary x-rays thus generated are analysed by a LiF (200) crystal in Philips PW 1220 x-ray fluorescence spectrometer using suitable detectors. The minimum determination limit (MDL) is 0.01% for all rare earth oxides determined except for Y 2 O 3 for which it is 0.005%. (author)

Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

Directory of Open Access Journals (Sweden)

Deming Ma

2015-01-01

Full Text Available We investigate the defect feature of AsGaGaAs defect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT. Our calculations reveal that the lowest donor level of AsGaGaAs defect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of the AsGaGaAs defect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV. This suggests that AsGaGaAs defect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internal AsGaGaAs and surface AsGaGaAs defects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation of AsGaGaAs defect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Science.gov (United States)

Roeckerath, M.; Lopes, J. M. J.; Özben, E. Durǧun; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D. G.

2010-01-01

Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of <1 nA/cm2. Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm2/V•s was extracted.

Magneto-optical studies of valence instability in europium and terbium phosphors

Czech Academy of Sciences Publication Activity Database

Rodrigues, L.C.v.; Hölsä, J.; Brito, H.F.; Maryško, Miroslav; Matos, J.R.; Paturi, P.; Rodrigues, R.V.; Lastusaari, M.

2016-01-01

Roč. 170, Feb (2016), 701-706 ISSN 0022-2313 Institutional support: RVO:68378271 Keywords : valence * europium * terbium * oxysulfide and -sulfate * phosphors * paramagnetic susceptibility Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.686, year: 2016

Cross sections from 800 MeV proton irradiation of terbium

Energy Technology Data Exchange (ETDEWEB)

Engle, J.W., E-mail: jwengle@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Mashnik, S.G.; Bach, H.; Couture, A.; Jackman, K.; Gritzo, R.; Ballard, B.D.; Fassbender, M.; Smith, D.M.; Bitteker, L.J.; Ullmann, J.L.; Gulley, M.S.; Pillai, C.; John, K.D.; Birnbaum, E.R. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Nortier, F.M., E-mail: meiring@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

2012-11-02

Terbium foils were irradiated with 800 MeV protons to ascertain the potential for production of lanthanide isotopes of interest in medical, astrophysical, and basic science research and to contribute to nuclear data repositories. Isotopes produced in the foil were quantified by gamma spectroscopy. Cross sections for 35 isotopes produced in the irradiation are reported and compared with predictions by the MCNP6 transport code using the CEM03.03, Bertini and INCL + ABLA event generators. Our results indicate the need to accurately consider fission and fragmentation of relatively light target nuclei like terbium in the modeling of nuclear reactions at 800 MeV. The predictive power of the code was found to be different for each event generator tested but was satisfactory for most of the product yields in the mass region where spallation reactions dominate. However, none of the event generators' results are in complete agreement with measured data.

Interaction of terbium group metal oxides with carbon

International Nuclear Information System (INIS)

Vodop'yanov, A.G.; Baranov, S.V.; Kozhevnikov, G.N.

1990-01-01

Mechanism of carbothermal reduction of terbium group metals from oxides is investigated using thermodynamic and kinetic analyses. Interaction of metal oxides with carbon covers dissociation of metal oxides and reduction by carbon monoxide, which contribution into general reduction depends on CO pressure. Temperatures of reaction beginning for batch initial components at P=1.3x10 -4 and P CO =0.1 MPa and of formation of oxycarbide melts are determined

White beam synchrotron x-ray topography of gallium arsenide

International Nuclear Information System (INIS)

Winter, J.M. Jr.; Green, R.E. Jr.; Corak, W.S.

1988-01-01

The defect structure of gallium arsenide was investigated using white beam transmission topography. The samples were cut and polished monocrystal substrates from different suppliers. The goal of the work was to determine the viability of the method for documenting various crystallographic defect structures and establishing their effect on the performance of integrated microwave circuits fabricated on the wafers. The principles of the technique, essentially identical to classical Laue x-ray diffraction, are outlined. Two distinct defect structures were determined in the topographs. Reasons for the defect structures were postulated and the application of the method for quality control assessments of manufacturer-supplied gallium arsenide substrates was assessed

Terbium oxide at high pressures

International Nuclear Information System (INIS)

Dogra, Sugandha; Sharma, Nita Dilawar; Singh, Jasveer; Bandhyopadhyay, A.K.

2011-01-01

In this work we report the behaviour of terbium oxide at high pressures. The as received sample was characterized at ambient by X-ray diffraction and Raman spectroscopy. The X-ray diffraction showed the sample to be predominantly cubic Tb 4 O 7 , although a few peaks also match closely with Tb 2 O 3 . In fact in a recent study done on the same sample, the sample has been shown to be a mixture of Tb 4 O 7 and Tb 2 O 3 . The sample was subjected to high pressures using a Mao-Bell type diamond anvil cell upto a pressure of about 42 GPa with ruby as pressure monitor

Terbium(III) ions as sensitizers of oxidation of indole and its derivatives in Fenton system

Energy Technology Data Exchange (ETDEWEB)

Kaczmarek, Małgorzata, E-mail: mkaczmar@amu.edu.pl; Staninski, Krzysztof

2017-03-15

Oxidation of indole and its derivatives in the Fenton system as a source of oxidising agents, in the presence of terbium(III) ions was studied by chemiluminescence methods to get the kinetic curves of emission decay and spectral distributions of chemiluminescence. Terbium(III) ions acted as a sensitizer of the mixtures Tb(III)-Fe(II)/Fe(III)-H{sub 2}O{sub 2}-indole or its derivative (tryptophan, tryptamine, indole-3-acetic acid and indole-3-acetyl aspartic acid). For the above indolic compounds, linear dependencies of integrated intensity of chemiluminescence on concentration of indolic compound in water and in water-acetonitrile solution were obtained. The limits of detection (LOD) and quantification (LOQ) of the indolic compounds studied were found to be by one or two orders of magnitude lower in the system with terbium(III) ions than without them. - Highlights: • Chemiluminescence emitted on oxidation of indolic compounds in Fenton system. • Tb (III) ions as sensitizers of indolic compounds oxidation in solutions. • Linear relations between CL intensity and indolic compound concentration.

Study of current instabilities in high resistivity gallium arsenide

International Nuclear Information System (INIS)

Barraud, A.

1968-01-01

We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [fr

Complex compounds of terbium(III) with some nonsteroidal anti-inflammatory drugs and their analytical applications

International Nuclear Information System (INIS)

Teslyuk, O.I.; Egorova, A.V.; Yagodkin, B.N.; Bel'tyukova, S.V.

2007-01-01

Luminescence properties of the complexes of terbium(III) with nonsteroidal anti-inflammatory drugs (ibuprofen and orthofen) were studied. It was demonstrated that in the presence of organic bases (2,2'-dipyridyl and 1,10-phenanthroline) mixed-ligand complexes are formed and the luminescence intensity of terbium(III) increases by a factor of up to 250. The optimum complexation conditions were determined. It was proposed to use these complexes as analytical forms for the luminescence determination of nonsteroidal anti-inflammatory drugs (ibuprofen and orthofen) in pharmaceutical dosage forms. The detection limits are 2 and 0.05 μg/ml, respectively [ru

Electrical properties of indium arsenide irradiated with fast neutrons

International Nuclear Information System (INIS)

Kolin, N.G.; Osvenskii, V.B.; Rytova, N.S.; Yurova, E.S.

1987-01-01

A study was made of the influence of irradiation with fast reactor neutrons on electrical properties of indium arsenide samples with different dopant concentrations. The laws governing the formation and annealing of radiation defects in indium arsenide were found to be governed by the donor-acceptor interaction. Depending on the density of free carriers in the original crystal, irradiation could produce charged defects of predominantly donor or acceptor types. Donor defects in irradiated InAs samples were annealed practically completely, whereas a considerable fraction of residual acceptor defects was retained even after heat treatment at 900 degree C. The concentration of these residual acceptors depended on the electron density at the annealing temperature

Green light emission in aluminum oxide powders doped with different terbium concentrations

Energy Technology Data Exchange (ETDEWEB)

Mariscal B, L; Falcony, C. [IPN, Centro de Investigacion y de Estudios Avanzados, 07360 Ciudad de Mexico (Mexico); Carmona T, S.; Murrieta, H.; Sanchez A, M. A. [UNAM, Instituto de Fisica, 04510 Ciudad de Mexico (Mexico); Vazquez A, R. [IPN, Escuela Superior de Computo, 07738 Ciudad de Mexico (Mexico); Garcia R, C. M., E-mail: mariscal2005@gmail.com [UNAM, Facultad de Ciencias, 04510 Ciudad de Mexico (Mexico)

2016-11-01

Different emission intensities presented in aluminum oxide phosphors corresponding to different concentrations of doping performed with terbium are analyzed. The phosphors were synthesized by the evaporation technique and were characterized by photo and cathodoluminescence, X-ray diffraction and EDS techniques for different incorporation percentages of terbium as dopant; they show characteristic transitions in 494, 543, 587 and 622 nm, corresponding to {sup 5}D{sub 4} → {sup 7}F{sub 6}, {sup 5}D{sub 4} → {sup 7}F{sub 5}, {sup 5}D{sub 4} → {sup 7}F{sub 4} and {sup 5}D{sub 4} → {sup 7}F{sub 3}, respectively when they are excited with λ{sub exc} = 380 nm wavelength at room temperature. The results of X-ray diffraction show the presence of α-Al{sub 2}O{sub 3} phases with peaks located at 2θ = 25.78, 35.34, 37.96, 43.56, 45.8, 52.74, 57.7, 61.5, 66.74, 68.44, 77.12 and 80.94, and the δ-Al{sub 2}O-3 phase 2θ = 32.82, 45.8, 61.36 and 66.74. These compounds were heat treated for two hours at 1100 degrees Celsius. EDS analyzes indicate that these compounds have close to 60% oxygen around of 40% aluminum in the presence of terbium as dopant which indicates a stoichiometry close to the expected one for alumina. (Author)

Assessment of arsenic exposures and controls in gallium arsenide production.

Science.gov (United States)

Sheehy, J W; Jones, J H

1993-02-01

The electronics industry is expanding the use of gallium arsenide in the production of optoelectronic devices and integrated circuits. Workers in the electronics industry using gallium arsenide are exposed to hazardous substances such as arsenic, arsine, and various acids. Arsenic requires stringent controls to minimize exposures (the current OSHA PEL for arsenic is 10 micrograms/m3 and the NIOSH REL is 2 micrograms/m3 ceiling). Inorganic arsenic is strongly implicated in respiratory tract and skin cancer. For these reasons, NIOSH researchers conducted a study of control systems for facilities using gallium arsenide. Seven walk-through surveys were performed to identify locations for detailed study which appeared to have effective controls; three facilities were chosen for in-depth evaluation. The controls were evaluated by industrial hygiene sampling. Including personal breathing zone and area air sampling for arsenic and arsine; wipe samples for arsenic also were collected. Work practices and the use of personal protective equipment were documented. This paper reports on the controls and the arsenic exposure results from the evaluation of the following gallium arsenide processes: Liquid Encapsulated Czochralski (LEC) and Horizontal Bridgeman (HB) crystal growing, LEC cleaning operations, ingot grinding/wafer sawing, and epitaxy. Results at one plant showed that in all processes except epitaxy, average arsenic exposures were at or above the OSHA action level of 5 micrograms/m3. While cleaning the LEC crystal pullers, the average potential arsenic exposure of the cleaning operators was 100 times the OSHA PEL. At the other two plants, personal exposures for arsenic were well controlled in LEC, LEC cleaning, grinding/sawing, and epitaxy operations.

Electroanalytical performance of a terbium(III)-selective sensor based on a neutral ionophore in environmental and medicinal samples

Energy Technology Data Exchange (ETDEWEB)

Gupta, V.K.; Singh, A.K.; Gupta, Barkha [Indian Institute of Technology-Roorkee, Department of Chemistry, Roorkee (India)

2008-04-15

A new highly selective terbium(III) electrode was prepared with a polymeric film doped using S-2-benzothiazolyl-2-amino-{alpha}-(methoxyimino)-4-thiazolethiol acetate as an electroactive material, benzyl acetate (BA) as a plasticizer, and potassium tetrakis(4-chlorophenyl) borate (KTpClPB) as an anionic site in the percentage ratio 3.17:1.58:63.4:31.7 (ionophore-KTpClPB-BA-PVC, w/w). The electrode exhibited a linear response with a near Nernstian slope of 19.5 mV/decade within the concentration range 1.5 x 10{sup -7}-1.0 x 10{sup -2} M terbium ions, with a working pH range from 2.0 to 8.0, and a fast response time of 10 s and presented satisfactory reproducibility. The limit of detection was 9.3 x 10{sup -8} M. The results show that this electrode can be used in ethanol media up to 30% (v/v) concentration without interference. It can be used for 3 months without any considerable divergence in the potentials. Selectivity coefficients for terbium(III) with respect to many cations were investigated. The electrode is highly selective for terbium(III) ions over a large number of monovalent, bivalent, and trivalent cations. This shows the valuable property of the proposed electrode. The stability constant of the ionophore towards Tb{sup 3+} ions was determined with the sandwich membrane method. It was successfully used as an indicator electrode in potentiometric determination of terbium(III) ions with EDTA and in direct determination in tap water and binary mixtures with quantitative results. The utility of the proposed electrode was also determined in the presence of ionic and nonionic surfactants and in the presence of fluoride ions in four pharmaceutical (mouthwash) preparations. (orig.)

Electroanalytical performance of a terbium(III)-selective sensor based on a neutral ionophore in environmental and medicinal samples

International Nuclear Information System (INIS)

Gupta, V.K.; Singh, A.K.; Gupta, Barkha

2008-01-01

A new highly selective terbium(III) electrode was prepared with a polymeric film doped using S-2-benzothiazolyl-2-amino-α-(methoxyimino)-4-thiazolethiol acetate as an electroactive material, benzyl acetate (BA) as a plasticizer, and potassium tetrakis(4-chlorophenyl) borate (KTpClPB) as an anionic site in the percentage ratio 3.17:1.58:63.4:31.7 (ionophore-KTpClPB-BA-PVC, w/w). The electrode exhibited a linear response with a near Nernstian slope of 19.5 mV/decade within the concentration range 1.5 x 10 -7 -1.0 x 10 -2 M terbium ions, with a working pH range from 2.0 to 8.0, and a fast response time of 10 s and presented satisfactory reproducibility. The limit of detection was 9.3 x 10 -8 M. The results show that this electrode can be used in ethanol media up to 30% (v/v) concentration without interference. It can be used for 3 months without any considerable divergence in the potentials. Selectivity coefficients for terbium(III) with respect to many cations were investigated. The electrode is highly selective for terbium(III) ions over a large number of monovalent, bivalent, and trivalent cations. This shows the valuable property of the proposed electrode. The stability constant of the ionophore towards Tb 3+ ions was determined with the sandwich membrane method. It was successfully used as an indicator electrode in potentiometric determination of terbium(III) ions with EDTA and in direct determination in tap water and binary mixtures with quantitative results. The utility of the proposed electrode was also determined in the presence of ionic and nonionic surfactants and in the presence of fluoride ions in four pharmaceutical (mouthwash) preparations. (orig.)

Electron emission from individual indium arsenide semiconductor nanowires

NARCIS (Netherlands)

Heeres, E.C.; Bakkers, E.P.A.M.; Roest, A.L.; Kaiser, M.A.; Oosterkamp, T.H.; Jonge, de N.

2007-01-01

A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve,

Optical Characterization of Thick Growth Orientation-Patterned Gallium Arsenide

National Research Council Canada - National Science Library

Meyer, Joshua W

2006-01-01

.... Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques...

A terbium(III)-organic framework for highly selective sensing of cytidine triphosphate.

Science.gov (United States)

Zhao, Xi Juan; He, Rong Xing; Li, Yuan Fang

2012-11-21

Highly selective sensing of cytidine triphosphate (CTP) against other triphosphate nucleosides including ATP, GTP and UTP is successfully achieved with a luminescent terbium(III)-organic framework (TbOF) of [Tb(2)(2,3-pzdc)(2)(ox)(H(2)O)(2)](n) (2,3-pzdc(2-) = 2,3-pyrazinedicarboxylate, ox(2-) = oxalate).

Thermodynamics of gallium arsenide electrodeposition

International Nuclear Information System (INIS)

Perrault, G.G.

1986-01-01

Gallium Arsenide is well known as a very interesting compound for photoelectrical devices. Up to now, it has been prepared mostly by high temperature technology, and the authors considered that it might be of interest to set up an electrodeposition technique suitable to prepare thin layers of this compound. A reaction sequence similar to the one observed for Cadmium Sulfide or Cadmium Telluride could be considered. In these cases, the metal chalcogenide is obtained from the precipitation of the metal ions dissolved in the solutions by the reduction product of the metalloidic compound

Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

Science.gov (United States)

2011-03-01

spectrum, photoluminescence (PL), and refractive index measurements. Other methods such as infrared imagery and micro probe wavelength dispersing ...States. AFIT/DS/ENP/11-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF MELT- GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ...CHARACTERIZATION OF MELT-GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ALLOYS Jean Wei, BS, MS Approved

Raman spectra of terbium trichloride, phosphorus pentachloride and their molten mixtures

International Nuclear Information System (INIS)

Salyulev, A.B.; Zakir'yanova, I.D.

2008-01-01

Raman spectroscopy was used to study in situ the behavior of individual terbium trichloride and phosphorus pentachloride in different aggregative states as a function of temperature, and of solutions of PCl 5 vapors in molten TbCl 3 . A conclusion is drawn about their structure and the nature of phase transformations and chemical reactions in wide ranges of temperature and saturated vapor pressures [ru

Efficient green luminescence of terbium oxalate crystals: A case study with Judd-Ofelt theory and single crystal structure analysis and the effect of dehydration on luminescence

Science.gov (United States)

Alexander, Dinu; Joy, Monu; Thomas, Kukku; Sisira, S.; Biju, P. R.; Unnikrishnan, N. V.; Sudarsanakumar, C.; Ittyachen, M. A.; Joseph, Cyriac

2018-06-01

Design and synthesis of Lanthanide based metal organic framework is a frontier area of research owing to their structural diversity enabling specific applications. The luminescence properties of rare earths, tuned by the structural features of Ln-MOFs are investigated extensively. Rare earth oxalates which can be synthesized in a facile method, ensuring the structural features of MOFs with excellent photoluminescence characteristics deserves much attention. This work is the first time report on the single crystal structure and Judd-Ofelt (JO) theoretical analysis - their correlation with the intense and sharp green luminescence of Terbium oxalate crystals. The intense green luminescence observed for Terbium oxalate crystals for a wide range of excitation from DUV to visible region despite the luminescence limiting factors are discussed. The absence of concentration quenching and lifting up of forbidden nature of f-f transitions, allowing direct excitation of Terbium ions is analysed with the help of JO theory and single crystal structure analysis. The JO analysis predicted the asymmetry of Terbium sites, allowing the electric dipole transitions and from the JO intensity parameters, promising spectroscopic parameters - emission cross section, branching ratio, gain band width and gain coefficient of the material were calculated. The single crystal structure analysis revealed the asymmetry of Tb sites and structure of Terbium oxalate is formed by the hydrogen bonded stacking of overlapped six Terbium membered rings connected by the oxalate ligands. The molecularly thick layers thus formed on the crystal surface are imaged by the atomic force microscopy. The presence of water channels in the structure and the effect of lattice water molecules on the luminescence intensity are also investigated.

Spectrofluorimetric determination of cefixime using terbium-danofloxacin probe

Directory of Open Access Journals (Sweden)

Jamshid L Manzoori

2014-04-01

Full Text Available Objective(s:Cefixime (Cfx, is a semi-synthetic third-generation oral cephalosporin antibiotic that is prescribed for the treatment of susceptible infections. There are some procedures for the determination of Cfx in pharmaceutical formulations and biological samples. Herein a spectrofluorimetric method was proposed for Cfx determination based on the fluorescence quenching of terbium-danofloxacin (Tb3+-Dano in the presence of Cfx. Materials and Methods: Cfx was detected based on fluorescence quenching of terbium-danofloxacin (Tb3+-Dano in the presence of Cfx with maximum excitation and emission wavelengths at 347 nm and 545 nm, respectively. The quenched fluorescence intensity of Tb3+- Dano system is proportional to the concentration of Cfx. The optimum conditions for the determination of Cfx were studied. Results: The maximum response was achieved under optimum conditions of [Tris buffer]= 0.008 mol/l (pH 6.5, [Tb3+]=1×10-4 mol/l  and [Dano]=1×10-4 mol/l. The developed method was evaluated in terms of accuracy, precision and limit of detection. The linear concentration ranges for quantification of Cfx were 8.8×10-8-8.8×10-7 mol/l and 1.1×10-7-8.8×10-7 mol/l in standard and human serum samples with the detection limits (S/N=3 of 2.8×10-8 mol/l and 3.9×10-8 mol/l, respectively. The Cfx was determined in pharmaceutical tablets and spiked serum samples and the results were satisfactory.   Conclusion: This method is simple, practical and relatively interference-free for determination of Cfx in pharmaceutical tablets and serum samples.

Determination of fluoxetine in pharmaceutical and biological samples based on the silver nanoparticle enhanced fluorescence of fluoxetine-terbium complex.

Science.gov (United States)

Lotfi, Ali; Manzoori, Jamshid L

2016-11-01

In this study, a simple and sensitive spectrofluorimetric method is presented for the determination of fluoxetine based on the enhancing effect of silver nanoparticles (AgNPs) on the terbium-fluoxetine fluorescence emission. The AgNPs were prepared by a simple reduction method and characterized by UV-Vis spectroscopy and transmission electron microscopy. It was indicated that these AgNPs have a remarkable amplifying effect on the terbium-sensitized fluorescence of fluoxetine. The effects of various parameters such as AgNP and Tb 3+ concentration and the pH of the media were investigated. Under obtained optimal conditions, the fluorescence intensity of the terbium-fluoxetine-AgNP system was enhanced linearly by increasing the concentration of fluoxetine in the range of 0.008 to 19 mg/L. The limit of detection (b + 3s) was 8.3 × 10 -4 mg/L. The interference effects of common species found in real samples were also studied. The method had good linearity, recovery, reproducibility and sensitivity, and was satisfactorily applied for the determination of fluoxetine in tablet formulations, human urine and plasma samples. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Determination of fluoroquinolone antibiotics by microchip capillary electrophoresis along with time-resolved sensitized luminescence of their terbium(III) complexes

International Nuclear Information System (INIS)

Sierra-Rodero, Marina; Fernández -Romero, Juan Manuel; Gómez -Hens, Agustina

2014-01-01

We report on the time-resolved detection of the three fluoroquinolone (FQs) antibiotics ciprofloxacin (CIP), enrofloxacin (ENR) and flumequine (FLU). On addition of terbium(III) ions, the terbium(III)-FQs chelates are formed in-situ in an on-capillary derivatization reaction of a microfluidic system. The laser-induced terbium(III)-sensitized luminescence of the chelates is measured at excitation/emission wavelengths of 337/545 nm. The analytes can be separated and quantified within less than 4 min. A solid phase extraction step for analyte preconcentration can be included prior to chelation and microchip capillary electrophoresis. The analytical ranges of the calibration graphs for CIP, ENR and FLU are from 10.6 to 60.0, 10.3 to 51.0, and 11.5 to 58.8 ng mL −1 , respectively, and the detection limits are 3.2, 3.1 and 3.6 ng mL −1 , respectively. The precision was established at two concentration levels of each analyte and revealed relative standard deviations in the range from 3.0 to 10.2 %. The method was applied to the analysis of FQ-spiked water samples. (author)

Metal Contacts to Gallium Arsenide.

Science.gov (United States)

Ren, Fan

1991-07-01

While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.

{alpha}-particle induced reactions on yttrium and terbium

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, S.; Kumar, B.B. [School of Studies in Physics, Vikram University, Ujjain-456010 (India); Rashid, M.H. [Variable Energy Cyclotron Center, 1/AF, Bidhan Nagar, Calcutta (India); Chintalapudi, S.N. [Inter-University Consortium for DAE Facilities, 3/LB, Bidhan Nagar, Calcutta (India)

1997-05-01

The stacked foil activation technique has been employed for the investigation of {alpha}-particle induced reactions on the target elements yttrium and terbium up to 50 MeV. Six excitation functions for the ({alpha},xn) type of reactions were studied using high-resolution HPGe {gamma}-ray spectroscopy. A comparison with Blann{close_quote}s geometric dependent hybrid model has been made using the initial exciton number n{sub 0}=4(4p0h) and n{sub 0}=5(5p0h). A broad general agreement is observed between the experimental results and theoretical predictions with an initial exciton number n{sub 0}=4(4p0h). {copyright} {ital 1997} {ital The American Physical Society}

α-particle induced reactions on yttrium and terbium

International Nuclear Information System (INIS)

Mukherjee, S.; Kumar, B.B.; Rashid, M.H.; Chintalapudi, S.N.

1997-01-01

The stacked foil activation technique has been employed for the investigation of α-particle induced reactions on the target elements yttrium and terbium up to 50 MeV. Six excitation functions for the (α,xn) type of reactions were studied using high-resolution HPGe γ-ray spectroscopy. A comparison with Blann close-quote s geometric dependent hybrid model has been made using the initial exciton number n 0 =4(4p0h) and n 0 =5(5p0h). A broad general agreement is observed between the experimental results and theoretical predictions with an initial exciton number n 0 =4(4p0h). copyright 1997 The American Physical Society

Cerium(terbium, erbium)chloride-choline chloride aqueous systems

International Nuclear Information System (INIS)

Gajfutdinova, R.K.; Zhuravlev, E.F.; Bikbaeva, G.G.; Domrachev, V.N.; Vanskova, G.I.

1985-01-01

To clarify the effect of rare earth nature on mutual solubility of rare earth salts and amines the solubility of solid phases in the systems, consisting of choline chloride, water and cerium, terbium, erbium chlorides, has been studied. It is established, that solubility isotherms of all the systems, testify to the formation of new solid phases of the composition: Ce(Tb, Er)xCl 3 x2C 5 H 14 ONClx3H 2 O. Individuality of new solid phases is proved by DTA method, the composition is confirmed by chemical analysis and data of PMR spectra, for choline chloride and its complexes with rare earth chlorides of the given composition PMR and IR spectra are studied

A thermoluminescence study of Z2-centres in terbium-doped NaCl crystals

International Nuclear Information System (INIS)

Reddy, K.N.; Ahmed, I.M.; Pandaraiah, N.; Rao, U.V.S.; Babu, V.H.

1983-01-01

Thermoluminescence (TL), optical absorption are used to correlate thermal annealing of Z 2 -centres with TL peak occurring around 110 0 C in terbium-doped NaCl crystals. The TL glow peak occurring around 190 0 C is attributed to the thermal annealing of F-centres. The thermal activation parameters are calculated for both Z 2 - and F-centre peaks. (author)

Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

Science.gov (United States)

Francis, R. W.; Betz, F. E.

1985-01-01

The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

Lattice parameters guide superconductivity in iron-arsenides

Science.gov (United States)

Konzen, Lance M. N.; Sefat, Athena S.

2017-03-01

The discovery of superconducting materials has led to their use in technological marvels such as magnetic-field sensors in MRI machines, powerful research magnets, short transmission cables, and high-speed trains. Despite such applications, the uses of superconductors are not widespread because they function much below room-temperature, hence the costly cooling. Since the discovery of Cu- and Fe-based high-temperature superconductors (HTS), much intense effort has tried to explain and understand the superconducting phenomenon. While no exact explanations are given, several trends are reported in relation to the materials basis in magnetism and spin excitations. In fact, most HTS have antiferromagnetic undoped ‘parent’ materials that undergo a superconducting transition upon small chemical substitutions in them. As it is currently unclear which ‘dopants’ can favor superconductivity, this manuscript investigates crystal structure changes upon chemical substitutions, to find clues in lattice parameters for the superconducting occurrence. We review the chemical substitution effects on the crystal lattice of iron-arsenide-based crystals (2008 to present). We note that (a) HTS compounds have nearly tetragonal structures with a-lattice parameter close to 4 Å, and (b) superconductivity can depend strongly on the c-lattice parameter changes with chemical substitution. For example, a decrease in c-lattice parameter is required to induce ‘in-plane’ superconductivity. The review of lattice parameter trends in iron-arsenides presented here should guide synthesis of new materials and provoke theoretical input, giving clues for HTS.

A hydrometallurgical process for the recovery of terbium from fluorescent lamps: Experimental design, optimization of acid leaching process and process analysis.

Science.gov (United States)

Innocenzi, Valentina; Ippolito, Nicolò Maria; De Michelis, Ida; Medici, Franco; Vegliò, Francesco

2016-12-15

Terbium and rare earths recovery from fluorescent powders of exhausted lamps by acid leaching with hydrochloric acid was the objective of this study. In order to investigate the factors affecting leaching a series of experiments was performed in according to a full factorial plan with four variables and two levels (4 2 ). The factors studied were temperature, concentration of acid, pulp density and leaching time. Experimental conditions of terbium dissolution were optimized by statistical analysis. The results showed that temperature and pulp density were significant with a positive and negative effect, respectively. The empirical mathematical model deducted by experimental data demonstrated that terbium content was completely dissolved under the following conditions: 90 °C, 2 M hydrochloric acid and 5% of pulp density; while when the pulp density was 15% an extraction of 83% could be obtained at 90 °C and 5 M hydrochloric acid. Finally a flow sheet for the recovery of rare earth elements was proposed. The process was tested and simulated by commercial software for the chemical processes. The mass balance of the process was calculated: from 1 ton of initial powder it was possible to obtain around 160 kg of a concentrate of rare earths having a purity of 99%. The main rare earths elements in the final product was yttrium oxide (86.43%) following by cerium oxide (4.11%), lanthanum oxide (3.18%), europium oxide (3.08%) and terbium oxide (2.20%). The estimated total recovery of the rare earths elements was around 70% for yttrium and europium and 80% for the other rare earths. Copyright © 2016 Elsevier Ltd. All rights reserved.

Properties of gallium arsenide alloyed with Ge and Se by irradiation in nuclear reactor thermal column

International Nuclear Information System (INIS)

Kolin, N.G.; Osvenskij, V.B.; Tokarevskij, V.V.; Kharchenko, V.A.; Ievlev, S.M.

1985-01-01

Dependences of electrophysical properties as well as lattice unit spacing and density of nuclear-alloyed gallium arsenide on the fluence of reactor neutrons and heat treatment are investigated. Neutron radiation of gallium arsenide with different energy spectra is shown to differently affect material properties. Fast neutrons make the main contribution to defect formation. Concentration of compensating acceptor defects formed under GaAs radiation in a thermal column practically equals concentration of introduced donor impurities. Radiation defects of acceptor type are not annealed in the material completely even at 900-1000 deg C

High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.

1991-11-01

Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

Determination of trace amounts of rare earth elements in samarium, terbium and disprosium oxides by graphite furnace atomic-absorption spectrometry

International Nuclear Information System (INIS)

Dantas, E.S.K.

1990-01-01

A graphite furnace atomic-absorption spectrometry method for the determination of neodymium, europium, terbium, dysprosium and yttrium at trace level in samarium oxide; of samarium, europium, dysprosium, holmium, erbium and yttrium in terbium oxide and of europium, terbium, holmium, erbium and yttrium in dysprosium oxide was established. The best pyrolysis and atomization temperatures were determined for each lanthanide considered. Calibration curves were obtained for the pure elements, for binary mixtures formed by the matrix and each of the lanthanides studied and, finally, for the complex mixtures constituted by the matrix and all the other lanthanide of the group under scrutiny. This study has been carried out to examine the interference of the presence of one lanthanide on the behaviour of the other, since a lack of linearity on the calibration curves has been observed in some cases. Detection and determination limits have been determined as well. The detection limits encountered were within the range 0.002 to 0.3% for different elements. The precision of the method expressed as the relative standard deviation was calculated for each element present in each of the matrices studied. The conclusion arrived at is that the method can be applied for determining the above mentioned lanthanides present in the matrices studied with purity up to 99.50%. (author)

Liquid phase epitaxy of gallium arsenide - a review

International Nuclear Information System (INIS)

Alexiev, D.; Edmondson, M.; Butcher, K.S.A.; Tansley, T.

1992-07-01

Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

Noise suppression and long-range exchange coupling for gallium arsenide spin qubits

DEFF Research Database (Denmark)

Malinowski, Filip

This thesis presents the results of the experimental study performed on spin qubits realized in gate-defined gallium arsenide quantum dots, with the focus on noise suppression and long-distance coupling. First, we show that the susceptibility to charge noise can be reduced by reducing the gradien...

THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

Directory of Open Access Journals (Sweden)

Mustafa TEMİZ

1996-02-01

Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

Synthesis and luminescence properties of europium and terbium complexes with pyridine- or bipyridine-linked oligothiophene ligand

International Nuclear Information System (INIS)

Liu Ping; Huang Mingsheng; Pan Wanzhang; Zhang Yamin; Hu Jianhua; Deng Wenji

2006-01-01

With an aim to develop novel luminescence materials, europium and terbium complexes of 2,5-(2-thiophene)-pyridine (TPY) and 5,5'-bis(5-(2,2'-bithiophene))-2,2'-bipyridine (B2TBPY) were synthesized, and their luminescence properties studied. The complexes exhibit ligand-sensitized emission, which is typical of Eu(III) and Tb(III) ions

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

Science.gov (United States)

Mishina, H.; Buckley, D. H.

1984-01-01

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

Anomalous tensoelectric effects in gallium arsenide tunnel diodes

Energy Technology Data Exchange (ETDEWEB)

Alekseeva, Z.M.; Vyatkin, A.P.; Krivorotov, N.P.; Shchegol' , A.A.

1988-02-01

Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

Preparation and photoluminescence enhancement in terbium(III ternary complexes with β-diketone and monodentate auxiliary ligands

Directory of Open Access Journals (Sweden)

Devender Singh

2016-12-01

Full Text Available A series of new solid ternary complexes of terbium(III ion based on β-diketone ligand acetylacetone (acac and monodentate auxiliary ligands (aqua/urea/triphenylphosphineoxide/pyridine-N-oxide had been prepared. The structural characterizations of synthesized ternary compounds were studied by means of elemental analysis, infrared (IR, and proton nuclear magnetic resonance (NMR spectral techniques. The optical characteristics were investigated with absorption as well as photoluminescence spectroscopy. Thermal behavior of compounds was examined by TGA/DTA analysis and all metal complexes were found to have good thermal stability. The luminescence decay time of complexes were also calculated by monitoring at emission wavelength corresponding to 5D4 → 7F5 transition. A comparative inspection of the luminescent behavior of prepared ternary compounds was performed in order to determine the function of auxiliary ligands in the enhancement of luminescence intensity produced by central terbium(III ion. The color coordinates values suggested that compounds showed bright green emission in visible region in electromagnetic spectrum. Complexes producing green light could play a significant role in the fabrication of efficient light conversion molecular devices for display purposes and lightning systems.

Macroscopic diffusion models for precipitation in crystalline gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Kimmerle, Sven-Joachim Wolfgang

2009-09-21

Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

Autofluorescence-Free Live-Cell Imaging Using Terbium Nanoparticles.

Science.gov (United States)

Cardoso Dos Santos, M; Goetz, J; Bartenlian, H; Wong, K-L; Charbonnière, L J; Hildebrandt, N

2018-04-18

Fluorescent nanoparticles (NPs) have become irreplaceable tools for advanced cellular and subcellular imaging. While very bright NPs require excitation with UV or visible light, which can create strong autofluorescence of biological components, NIR-excitable NPs without autofluorescence issues exhibit much lower brightness. Here, we show the application of a new type of surface-photosensitized terbium NPs (Tb-NPs) for autofluorescence-free intracellular imaging in live HeLa cells. The combination of exceptionally high brightness, high photostability, and long photoluminecence (PL) lifetimes for highly efficient suppression of the short-lived autofluorescence allowed for time-gated PL imaging of intracellular vesicles over 72 h without toxicity and at extremely low Tb-NP concentrations down to 12 pM. Detection of highly resolved long-lifetime (ms) PL decay curves from small (∼10 μm 2 ) areas within single cells within a few seconds emphasized the unprecedented photophysical properties of Tb-NPs for live-cell imaging that extend well beyond currently available nanometric imaging agents.

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

International Nuclear Information System (INIS)

Tong, L.; Larsson, J.A.; Nolan, M.; Murtagh, M.; Greer, J.C.; Barbe, M.; Bailly, F.; Chevallier, J.; Silvestre, F.S.; Loridant-Bernard, D.; Constant, E.; Constant, F.M.

2002-01-01

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga -H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As -H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds

Pulsed electron-beam annealing of selenium-implanted gallium arsenide

International Nuclear Information System (INIS)

Inada, T.; Tokunaga, K.; Taka, S.

1979-01-01

Electrical properties of selenium-implanted gallium arsenide annealed by a single shot of high-power pulsed electron beams have been investigated by differential Hall-effect and sheet-resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron-beam annealing at an incident energy density of 1.2 J/cm 2 , independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2--3 x 10 19 /cm 3 , which is difficult to realize by conventional thermal annealing

Investigation of the luminescent properties of terbium-anthranilate complexes and application to the determination of anthranilic acid derivatives in aqueous solutions

Energy Technology Data Exchange (ETDEWEB)

Arnaud, N.; Georges, J

2003-01-10

The luminescent properties of terbium complexes with furosemide (FR), flufenamic (FF) acid, tolfenamic (TF) acid and mefenamic (MF) acid have been investigated in aqueous solutions. For all four compounds, complexation occurs when the carboxylic acid of the aminobenzoic group is dissociated and is greatly favoured in the presence of trioctylphosphine oxide as co-ligand and Triton X-100 as surfactant. Under optimum conditions, luminescence of the lanthanide ion is efficiently sensitised and the lifetime of the {sup 5}D{sub 4} resonance level of terbium in the complex is ranging between 1 and 1.9 ms, against 0.4 ms for the aqua ion. The sensitivity of the method for the determination of anthranilic acid derivatives is improved by one to two orders of magnitude with respect to that achieved using native fluorescence or terbium-sensitised luminescence in methanol. The limits of detection are 2x10{sup -10}, 5x10{sup -10} and 2x10{sup -9} mol l{sup -1} for flufenamic acid, furosemide and tolfenamic acid, and mefenamic acid, respectively, with within-run RSD values of less than 1%. The method has been applied to the determination of flufenamic acid in spiked calf sera with and without sample pretreatment. Depending on the method and the analyte concentration, the recovery was ranging between 83 and 113% and the lowest concentration attainable in serum samples was close to 1x10{sup -7} mol l{sup -1}.

Resonance energy transfer from quinolinone modified polystyrene-block-poly(styrene-alt-maleic anhydride) copolymer to terbium(III) metal ions

Czech Academy of Sciences Publication Activity Database

Výprachtický, Drahomír; Mikeš, F.; Lokaj, Jan; Pokorná, Veronika; Cimrová, Věra

2015-01-01

Roč. 160, April (2015), s. 27-34 ISSN 0022-2313 R&D Projects: GA ČR GAP106/12/0827; GA ČR(CZ) GA13-26542S Institutional support: RVO:61389013 Keywords : energy transfer * terbium luminescence * quinolinone donor Subject RIV: CD - Macromolecular Chemistry Impact factor: 2.693, year: 2015

Detection of Bacterial Endospores in Soil by Terbium Fluorescence

Directory of Open Access Journals (Sweden)

Andrea Brandes Ammann

2011-01-01

Full Text Available Spore formation is a survival mechanism of microorganisms when facing unfavorable environmental conditions resulting in “dormant” states. We investigated the occurrence of bacterial endospores in soils from various locations including grasslands (pasture, meadow, allotment gardens, and forests, as well as fluvial sediments. Bacterial spores are characterized by their high content of dipicolinic acid (DPA. In the presence of terbium, DPA forms a complex showing a distinctive photoluminescence spectrum. DPA was released from soil by microwaving or autoclaving. The addition of aluminium chloride reduced signal quenching by interfering compounds such as phosphate. The highest spore content (up to 109 spores per gram of dry soil was found in grassland soils. Spore content is related to soil type, to soil depth, and to soil carbon-to-nitrogen ratio. Our study might provide a basis for the detection of “hot spots” of bacterial spores in soil.

Detection of spin-states in Mn-doped gallium arsenide films

International Nuclear Information System (INIS)

Hofer, Werner A; Palotas, Krisztian; Teobaldi, Gilberto; Sadowski, Janusz; Mikkelsen, Anders; Lundgren, Edvin

2007-01-01

We show that isolated magnetic dipoles centred at the position of manganese impurities in a gallium arsenide lattice lead to spin polarized states in the bandgap of the III-V semiconductor. Spectroscopy simulations with a tungsten tip agree well with experimental data; in this case, no difference can be observed for the two magnetic groundstates. But if the signal is read with a magnetic iron tip, it changes by a factor of up to 20, depending on the magnetic orientation of the Mn atom

Magnetoresistance in terbium and holmium single crystals

International Nuclear Information System (INIS)

Singh, R.L.; Jericho, M.H.; Geldart, D.J.W.

1976-01-01

The longitudinal magnetoresistance of single crystals of terbium and holmium metals in their low-temperature ferromagnetic phase has been investigated in magnetic fields up to 80 kOe. Typical magnetoresistance isotherms exhibit a minimum which increases in depth and moves to higher fields as the temperature increases. The magnetoresistance around 1 0 K, where inelastic scattering is negligible, has been interpreted as the sum of a negative contribution due to changes in the domain structure and a positive contribution due to normal magnetoresistance. At higher temperatures, a phenomenological approach has been developed to extract the inelastic phonon and spin-wave components from the total measured magnetoresistance. In the temperature range 4--20 0 K (approximately), the phonon resistivity varies as T 3 . 7 for all samples. Approximate upper and lower bounds have been placed on the spin-wave resistivity which is also found to be described by a simple power law in this temperature range. The implications of this result for theoretical treatments of spin-wave resistivity due to s-f exchange interactions are considered. It is concluded that the role played by the magnon energy gap is far less transparent than previously suggested

Testing of gallium arsenide solar cells on the CRRES vehicle

International Nuclear Information System (INIS)

Trumble, T.M.

1985-01-01

A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage

Compact all-fiber optical Faraday components using 65-wt%-terbium-doped fiber with a record Verdet constant of -32 rad/(Tm).

Science.gov (United States)

Sun, L; Jiang, S; Marciante, J R

2010-06-07

A compact all-fiber Faraday isolator and a Faraday mirror are demonstrated. At the core of each of these components is an all-fiber Faraday rotator made of a 4-cm-long, 65-wt%-terbium-doped silicate fiber. The effective Verdet constant of the terbium-doped fiber is measured to be -32 rad/(Tm), which is 27 x larger than that of silica fiber. This effective Verdet constant is the largest value measured to date in any fiber and is 83% of the Verdet constant of commercially available crystal used in bulk optics-based isolators. Combining the all-fiber Faraday rotator with fiber polarizers results in a fully fusion spliced all-fiber isolator whose isolation is measured to be 19 dB. Combining the all-fiber Faraday rotator with a fiber Bragg grating results in an all-fiber Faraday mirror that rotates the polarization state of the reflected light by 88 +/- 4 degrees .

Origin of gigantic magnetostriction and crystal field effects in terbium dititanate

International Nuclear Information System (INIS)

Aleksandrov, I.V.; Lidskij, B.V.; Mamsurova, L.G.

1985-01-01

The temperature and magnetic field dependences of the magnetostriction and magnetization and the temperature dependences of the magnetic susceptibility, specific heat and lattice parameter are investigated experimentally in a broad range of temperature and field strength for polycrystalline and single crystal Tb 2 Ti 2 O 7 . A conclusion is drawn regarding the structure of the energy levels of Tb 3+ in Tb 2 Ti 2 O 7 . A qualitative and quantitative explanation of all observed magnetic effects, and in particular of gigantic magnetostriction in Tb 2 Ti 2 O 7 , is presented which is based on the crystal field theory. It is shown that the huge magnitude of the magnetostriction in terbium dititanate is due to the specificity of the energy spectrum of Tb 3+ in Tb 2 Ti 2 O 7

In-plane electronic anisotropy of underdoped '122' Fe-arsenide superconductors revealed by measurements of detwinned single crystals

International Nuclear Information System (INIS)

Fisher, I R; Shen, Z X; Degiorgi, L

2011-01-01

The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four-fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and angle-resolved photoemission spectroscopy measurements of detwinned single crystals of underdoped Fe-arsenide superconductors in the '122' family of compounds.

In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Fisher, Ian Randal

2012-05-08

The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

Electronic structure of surface-supported bis(phthalocyaninato) terbium(III) single molecular magnets.

Science.gov (United States)

Vitali, Lucia; Fabris, Stefano; Conte, Adriano Mosca; Brink, Susan; Ruben, Mario; Baroni, Stefano; Kern, Klaus

2008-10-01

The electronic structure of isolated bis(phthalocyaninato) terbium(III) molecules, a novel single-molecular-magnet (SMM), supported on the Cu(111) surface has been characterized by density functional theory and scanning tunneling spectroscopy. These studies reveal that the interaction with the metal surface preserves both the molecular structure and the large spin magnetic moment of the metal center. The 4f electron states are not perturbed by the adsorption while a strong molecular/metal interaction can induce the suppression of the minor spin contribution delocalized over the molecular ligands. The calculations show that the inherent spin magnetic moment of the molecule is only weakly affected by the interaction with the surface and suggest that the SMM character might be preserved.

Elastic properties of some transition metal arsenides

Science.gov (United States)

Nayak, Vikas; Verma, U. P.; Bisht, P. S.

2018-05-01

The elastic properties of transition metal arsenides (TMAs) have been studied by employing Wien2K package based on density functional theory in the zinc blende (ZB) and rock salt (RS) phase treating valance electron scalar relativistically. Further, we have also treated them non-relativistically to find out the relativistic effect. We have calculated the elastic properties by computing the volume conservative stress tensor for small strains, using the method developed by Charpin. The obtained results are discussed in paper. From the obtained results, it is clear that the values of C11 > C12 and C44 for all the compounds. The values of shear moduli of these compounds are also calculated. The internal parameter for these compounds shows that ZB structures of these compounds have high resistance against bond order. We find that the estimated elastic constants are in good agreement with the available data.

Folate Receptor Targeted Alpha-Therapy Using Terbium-149

CERN Document Server

Müller, Cristina; Haller, Stephanie; Dorrer, Holger; Köster, Ulli; Johnston, Karl; Zhernosekov, Konstantin; Türler, Andreas; Schibli, Roger

2014-01-01

Terbium-149 is among the most interesting therapeutic nuclides for medical applications. It decays by emission of short-range α-particles (Eα = 3.967 MeV) with a half-life of 4.12 h. The goal of this study was to investigate the anticancer efficacy of a 149Tb-labeled DOTA-folate conjugate (cm09) using folate receptor (FR)-positive cancer cells in vitro and in tumor-bearing mice. 149Tb was produced at the ISOLDE facility at CERN. Radiolabeling of cm09 with purified 149Tb resulted in a specific activity of ~1.2 MBq/nmol. In vitro assays performed with 149Tb-cm09 revealed a reduced KB cell viability in a FR-specific and activity concentration-dependent manner. Tumor-bearing mice were injected with saline only (group A) or with 149Tb-cm09 (group B: 2.2 MBq; group C: 3.0 MBq). A significant tumor growth delay was found in treated animals resulting in an increased average survival time of mice which received 149Tb-cm09 (B: 30.5 d; C: 43 d) compared to untreated controls (A: 21 d). Analysis of blood parameters rev...

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

Science.gov (United States)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

2015-05-01

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, Pmax was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

International Nuclear Information System (INIS)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

2015-01-01

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P max was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs

Crystal structures of two mononuclear complexes of terbium(III nitrate with the tripodal alcohol 1,1,1-tris(hydroxymethylpropane

Directory of Open Access Journals (Sweden)

Thaiane Gregório

2017-02-01

Full Text Available Two new mononuclear cationic complexes in which the TbIII ion is bis-chelated by the tripodal alcohol 1,1,1-tris(hydroxymethylpropane (H3LEt, C6H14O3 were prepared from Tb(NO33·5H2O and had their crystal and molecular structures solved by single-crystal X-ray diffraction analysis after data collection at 100 K. Both products were isolated in reasonable yields from the same reaction mixture by using different crystallization conditions. The higher-symmetry complex dinitratobis[1,1,1-tris(hydroxymethylpropane]terbium(III nitrate dimethoxyethane hemisolvate, [Tb(NO32(H3LEt2]NO3·0.5C4H10O2, 1, in which the lanthanide ion is 10-coordinate and adopts an s-bicapped square-antiprismatic coordination geometry, contains two bidentate nitrate ions bound to the metal atom; another nitrate ion functions as a counter-ion and a half-molecule of dimethoxyethane (completed by a crystallographic twofold rotation axis is also present. In product aquanitratobis[1,1,1-tris(hydroxymethylpropane]terbium(III dinitrate, [Tb(NO3(H3LEt2(H2O](NO32, 2, one bidentate nitrate ion and one water molecule are bound to the nine-coordinate terbium(III centre, while two free nitrate ions contribute to charge balance outside the tricapped trigonal-prismatic coordination polyhedron. No free water molecule was found in either of the crystal structures and, only in the case of 1, dimethoxyethane acts as a crystallizing solvent. In both molecular structures, the two tripodal ligands are bent to one side of the coordination sphere, leaving room for the anionic and water ligands. In complex 2, the methyl group of one of the H3LEt ligands is disordered over two alternative orientations. Strong hydrogen bonds, both intra- and intermolecular, are found in the crystal structures due to the number of different donor and acceptor groups present.

Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

Energy Technology Data Exchange (ETDEWEB)

Prechtel, Hans Leonhard

2011-08-15

In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

Hyperfine structure of the odd parity level system in the terbium atom

International Nuclear Information System (INIS)

Stefanska, D; Furmann, B

2017-01-01

Within this work new experimental results concerning the hyperfine structure ( hfs ) in the terbium atom are presented, concerning the odd parity levels system, hitherto only scarcely investigated (apart from the ground term). hfs constants A and B for 113 levels were determined for the first time, and for another 16 levels, which already occurred in our earlier works, supplementary results were obtained; additionally, our earlier results for 93 levels were compiled. The hfs of the odd parity levels was investigated using the method of laser induced fluorescence in a hollow cathode discharge. The hfs of 165 spectral lines, where the levels in question were involved as the upper levels, was recorded. Literature values of hfs constants of the even-parity lower levels (including our own earlier results) greatly facilitated the present data evaluation. (paper)

Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation.

Science.gov (United States)

Xiong, Yucheng; Tang, Hao; Wang, Xiaomeng; Zhao, Yang; Fu, Qiang; Yang, Juekuan; Xu, Dongyan

2017-10-16

In this work, we experimentally investigated the effect of sulfur passivation on thermal transport in indium arsenide (InAs) nanowires. Our measurement results show that thermal conductivity can be enhanced by a ratio up to 159% by sulfur passivation. Current-voltage (I-V) measurements were performed on both unpassivated and S-passivated InAs nanowires to understand the mechanism of thermal conductivity enhancement. We observed a remarkable improvement in electrical conductivity upon sulfur passivation and a significant contribution of electrons to thermal conductivity, which account for the enhanced thermal conductivity of the S-passivated InAs nanowires.

Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

DEFF Research Database (Denmark)

Fiore, A.; Oesterle, U.; Stanley, R.P.

2001-01-01

We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

Terbium fluorescence as a sensitive, inexpensive probe for UV-induced damage in nucleic acids

International Nuclear Information System (INIS)

El-Yazbi, Amira F.; Loppnow, Glen R.

2013-01-01

Graphical abstract: -- Highlights: •Simple, inexpensive, mix-and-read assay for positive detection of DNA damage. •Recognition of undamaged DNA via hybridization to a hairpin probe. •Terbium(III) fluorescence reports the amount of damage by binding to ssDNA. •Tb/hairpin is a highly selective and sensitive fluorescent probe for DNA damage. -- Abstract: Much effort has been focused on developing methods for detecting damaged nucleic acids. However, almost all of the proposed methods consist of multi-step procedures, are limited, require expensive instruments, or suffer from a high level of interferences. In this paper, we present a novel simple, inexpensive, mix-and-read assay that is generally applicable to nucleic acid damage and uses the enhanced luminescence due to energy transfer from nucleic acids to terbium(III) (Tb 3+ ). Single-stranded oligonucleotides greatly enhance the Tb 3+ emission, but duplex DNA does not. With the use of a DNA hairpin probe complementary to the oligonucleotide of interest, the Tb 3+ /hairpin probe is applied to detect ultraviolet (UV)-induced DNA damage. The hairpin probe hybridizes only with the undamaged DNA. However, the damaged DNA remains single-stranded and enhances the intrinsic fluorescence of Tb 3+ , producing a detectable signal directly proportional to the amount of DNA damage. This allows the Tb 3+ /hairpin probe to be used for sensitive quantification of UV-induced DNA damage. The Tb 3+ /hairpin probe showed superior selectivity to DNA damage compared to conventional molecular beacons probes (MBs) and its sensitivity is more than 2.5 times higher than MBs with a limit of detection of 4.36 ± 1.2 nM. In addition, this probe is easier to synthesize and more than eight times cheaper than MBs, which makes its use recommended for high-throughput, quantitative analysis of DNA damage

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

Energy Technology Data Exchange (ETDEWEB)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

2015-05-15

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

Construction of the energy matrix for complex atoms. Part VIII: Hyperfine structure HPC calculations for terbium atom

Science.gov (United States)

Elantkowska, Magdalena; Ruczkowski, Jarosław; Sikorski, Andrzej; Dembczyński, Jerzy

2017-11-01

A parametric analysis of the hyperfine structure (hfs) for the even parity configurations of atomic terbium (Tb I) is presented in this work. We introduce the complete set of 4fN-core states in our high-performance computing (HPC) calculations. For calculations of the huge hyperfine structure matrix, requiring approximately 5000 hours when run on a single CPU, we propose the methods utilizing a personal computer cluster or, alternatively a cluster of Microsoft Azure virtual machines (VM). These methods give a factor 12 performance boost, enabling the calculations to complete in an acceptable time.

Synthesis and crystal structure of terbium(III) meta-oxoborate Tb(BO{sub 2}){sub 3} ({identical_to} TbB{sub 3}O{sub 6}); Synthese und Kristallstruktur von Terbium(III)-meta-Oxoborat Tb(BO{sub 2}){sub 3} ({identical_to} TbB{sub 3}O{sub 6})

Energy Technology Data Exchange (ETDEWEB)

Nikelski, Tanja; Schleid, Thomas [Institut fuer Anorganische Chemie der Universitaet Stuttgart (Germany)

2003-06-01

The terbium meta-oxoborate Tb(BO{sub 2}){sub 3} ({identical_to} TbB{sub 3}O{sub 6}) is obtained as single crystals by the reaction of terbium, Tb{sub 4}O{sub 7} and TbCl{sub 3} with an excess of B{sub 2}O{sub 3} in gastight sealed platinum ampoules at 950 C after three weeks. The compound appears to be air- and water-resistant and crystallizes as long, thin, colourless needles which tend to growth-twinning due to their marked fibrous habit. The crystal structure of Tb(BO{sub 2}){sub 3} (orthorhombic, Pnma; a = 1598.97(9), b = 741.39(4), c = 1229.58(7) pm; Z = 16) contains strongly corrugated oxoborate layers {sub {infinity}}{sup 2}{l_brace}(BO{sub 2}){sup -}{r_brace} built of vertex-linked [BO{sub 4}]{sup 5-} tetrahedra (d(B-O) = 143 - 154 pm, and angsph;(O-B-O) = 102-115 ) which spread out parallel (100). The four crystallographically different Tb{sup 3+} cations all exhibit coordination numbers of eight towards the oxygen atoms (d(Tb-O) = 228-287 pm). The corresponding metal cation polyhedra [TbO{sub 8}]{sup 13+} too convene to layers (composition: {sub {infinity}}{sup 2}{l_brace}(Tb{sub 2}O{sub 11}){sup 16-}{r_brace}) which are likewise oriented parallel to the (100) plane. (Abstract Copyright [2003], Wiley Periodicals, Inc.) [German] Das Terbium-meta-Oxoborat Tb(BO{sub 2}){sub 3} ({identical_to} TbB{sub 3}O{sub 6}) entsteht einkristallin bei der Reaktion von Terbium, Tb{sub 4}O{sub 7} und TbCl{sub 3} mit einem Ueberschuss von B{sub 2}O{sub 3} in gasdicht verschlossenen Platinampullen nach drei Wochen bei 950 C. Die Verbindung ist luft- und wasserstabil und faellt in langen, duennen, farblosen Nadeln an, die aufgrund ihres ausgepraegt faserigen Habitus zur Wachstumsverzwillingung neigen. Die Kristallstruktur von Tb(BO{sub 2}){sub 3} (orthorhombisch, Pnma; a = 1598, 97(9), b = 741, 39(4), c = 1229, 58(7) pm; Z = 16) enthaelt parallel (100) verlaufende, stark gewellte Oxoborat-Schichten {sub {infinity}}{sup 2}{l_brace}(BO{sub 2}){sup -}{r_brace} aus

Synchrotron white beam topographic studies of gallium arsenide crystals

International Nuclear Information System (INIS)

Wierzchowski, W.; Wieteska, K.; Graeff, W.

1997-01-01

A series of samples cut out from different types of gallium arsenide crystals with low dislocation density were studied by means of white beam synchrotron topography. The investigation was performed with transmission and black-reflection projection methods and transmission section method. Some of topographs in transmission geometry provided a very high sensitivity suitable for revealing small precipitates. The transmission section images significantly differed depending on the wavelength and absorption. In some cases a distinct Pendelloesung fringes and fine details of dislocation and precipitates images were observed. It was possible to reproduce the character of these images by means of numerical simulation based on integration of Takagi-Taupin equations. Due to more convenient choice of radiation, synchrotron back-reflection projection topography provided much better visibility of dislocations than analogous realized with conventional X-ray sources. (author)

Sensitive luminescent determination of DNA using the terbium(III)-difloxacin complex

International Nuclear Information System (INIS)

Yegorova, Alla V.; Scripinets, Yulia V.; Duerkop, Axel; Karasyov, Alexander A.; Antonovich, Valery P.; Wolfbeis, Otto S.

2007-01-01

The interaction of the terbium-difloxacin complex (Tb-DFX) with DNA has been examined by using UV-vis absorption and luminescence spectroscopy. The Tb-DFX complex shows an up to 85-fold enhancement of luminescence intensity upon titration with DNA. The long decay times allow additional detection schemes like time-resolved measurements in microplate readers to enhance sensitivity by off-gating short-lived background luminescence. Optimal conditions are found at equimolar concentrations of Tb 3+ and DFX (0.1 or 1 μM) at pH 7.4. Under these conditions, the luminescence intensity is linearly dependent on the concentration of ds-DNAs and ss-DNA between 1-1500 ng mL -1 and 4.5-270 ng mL -1 , respectively. The detection limit is 0.5 ng mL -1 for ds-DNAs and 2 ng mL -1 for ss-DNA. The mechanism for the luminescence enhancement was also studied

Monoxides of small terbium clusters: A density functional theory investigation

Energy Technology Data Exchange (ETDEWEB)

Zhang, G. L.; Yuan, H. K., E-mail: yhk10@swu.edu.cn; Chen, H.; Kuang, A. L.; Li, Y.; Wang, J. Z.; Chen, J. [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)

2014-12-28

To investigate the effect of oxygen atom on the geometrical structures, electronic, and magnetic properties of small terbium clusters, we carried out the first-principles calculations on Tb{sub n}O (n = 1-14) clusters. The capping of an oxygen atom on one trigonal-facet of Tb{sub n} structures is always favored energetically, which can significantly improve the structural stability. The far-infrared vibrational spectroscopies are found to be different from those of corresponding bare clusters, providing a distinct signal to detect the characteristic structures of Tb{sub n}O clusters. The primary effect of oxygen atom on magnetic properties is to change the magnetic orderings among Tb atoms and to reduce small of local magnetic moments of the O-coordinated Tb atoms, both of which serve as the key reasons for the experimental magnetic evolution of an oscillating behavior. These calculations are consistent with, and help to account for, the experimentally observed magnetic properties of monoxide Tb{sub n}O clusters [C. N. Van Dijk et al., J. Appl. Phys. 107, 09B526 (2010)].

Spin Injection in Indium Arsenide

Directory of Open Access Journals (Sweden)

Mark eJohnson

2015-08-01

Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

Evaluating United States and world consumption of neodymium, dysprosium, terbium, and praseodymium in final products

Science.gov (United States)

Hart, Matthew

This paper develops scenarios of future rare-earth-magnet metal (neodymium, dysprosium, terbium, and praseodymium) consumption in the permanent magnets used in wind turbines and hybrid electric vehicles. The scenarios start with naive base-case scenarios for growth in wind-turbine and hybrid-electric-vehicle sales over the period 2011 to 2020, using historical data for each good. These naive scenarios assume that future growth follows time trends in historical data and does not depend on any exogenous variable. Specifically, growth of each technological market follows historical time trends, and the amount of rare earths used per unit of technology remains fixed. The chosen reference year is 2010. Implied consumptions of the rare earth magnet metals are calculated from these scenarios. Assumptions are made for the material composition of permanent magnets, the market share of permanent-magnet wind turbines and vehicles, and magnet weight per unit of technology. Different scenarios estimate how changes in factors like the material composition of magnets, growth of the economy, and the price of a substitute could affect future consumption. Each scenario presents a different method for reducing rare earth consumption and could be interpreted as potential policy choices. In 2010, the consumption (metric tons, rare-earth-oxide equivalent) of each rare-earth-magnet metal was as follows. Total neodymium consumption in the world for both technologies was 995 tons; dysprosium consumption was 133 tons; terbium consumption was 50 tons; praseodymium consumption was zero tons. The base scenario for wind turbines shows there could be strong, exponential growth in the global wind turbine market. New U.S. sales of hybrid vehicles would decline (in line with the current economic recession) while non-U.S. sales increase through 2020. There would be an overall increase in the total amount of magnetic rare earths consumed in the world. Total consumption of each rare earth in the short

Determination of sertraline in pharmaceutical and biological samples using 1, 10-phenanthroline-terbium probe and silver nanoparticles enhanced fluorescence

Energy Technology Data Exchange (ETDEWEB)

Lotfi, Ali, E-mail: alilotfi67@gmail.com [Young Researchers and Elite Club, Tabriz Branch, Islamic Azad University, Tabriz (Iran, Islamic Republic of); Manzoori, Jamshid L. [Department of Chemistry, Tabriz Branch, Islamic Azad University, Tabriz (Iran, Islamic Republic of); Mohagheghi, Arash [Clinical Psychiatry Research Center, Tabriz University of Medical Sciences, Tabriz (Iran, Islamic Republic of)

2017-05-15

Sertraline is an antidepressant widely prescribed for major depressive disorders. In this contribution we report a novel, rapid and sensitive spectrofluorimetric technique, developed and validated for the determination of sertraline in pharmaceutical, human urine and human plasma samples, based on the fluorescence enhancement of the sertraline by 1, 10-phenanthroline-terbium probe with Ag nanoparticles (AgNPs). The effect of pH, buffer concentration, the order of addition of reagents, terbium and 1, 10-phenanthroline concentrations, and concentration of Ag nanoparticles (AgNPs) as well as reaction time on the fluorescence intensity were investigated and the optimum conditions were determined. The linear range for determination of sertraline was obtained as 0.001–3 mg L{sup −1}. The limit of detection (b+3s) and the limit of quantification was calculated as 2.9×10{sup −4} mg L{sup −1} and 9.8×10{sup −4} mg L{sup −1}, respectively. The interference effects of common excipients found in pharmaceutical preparations were studied. The presented technique was used to determine the sertraline in pharmaceutical samples, human urine and plasma as real samples. The presented method was indicated a comparable results with the standard analytical techniques for sertraline. Good linearity, reproducibility, recovery and limit of detection have made this method suitable for determination of sertraline in various types of samples.

Determination of sertraline in pharmaceutical and biological samples using 1, 10-phenanthroline-terbium probe and silver nanoparticles enhanced fluorescence

International Nuclear Information System (INIS)

Lotfi, Ali; Manzoori, Jamshid L.; Mohagheghi, Arash

2017-01-01

Sertraline is an antidepressant widely prescribed for major depressive disorders. In this contribution we report a novel, rapid and sensitive spectrofluorimetric technique, developed and validated for the determination of sertraline in pharmaceutical, human urine and human plasma samples, based on the fluorescence enhancement of the sertraline by 1, 10-phenanthroline-terbium probe with Ag nanoparticles (AgNPs). The effect of pH, buffer concentration, the order of addition of reagents, terbium and 1, 10-phenanthroline concentrations, and concentration of Ag nanoparticles (AgNPs) as well as reaction time on the fluorescence intensity were investigated and the optimum conditions were determined. The linear range for determination of sertraline was obtained as 0.001–3 mg L −1 . The limit of detection (b+3s) and the limit of quantification was calculated as 2.9×10 −4 mg L −1 and 9.8×10 −4 mg L −1 , respectively. The interference effects of common excipients found in pharmaceutical preparations were studied. The presented technique was used to determine the sertraline in pharmaceutical samples, human urine and plasma as real samples. The presented method was indicated a comparable results with the standard analytical techniques for sertraline. Good linearity, reproducibility, recovery and limit of detection have made this method suitable for determination of sertraline in various types of samples.

Self-assembly of Terbium(III)-based metal-organic complexes with two-photon absorbing active

Science.gov (United States)

Li, Dandan; Shao, Nanqi; Sun, Xianshun; Zhang, Guocui; Li, Shengli; Zhou, Hongping; Wu, Jieying; Tian, Yupeng

2014-12-01

Hybrid complexes based on D-π-A type dyes p-aminostyryl-pyridinum and Terbium(III) complex anion (1, 2) have been synthesized by ionic exchange reaction. Meanwhile two different alkyl-substituted amino groups were used as electron donors in organic dyes cations. The synthesized complexes were characterized by element analysis. In addition, the structural features of them were systematic studied by single crystal X-ray diffraction analysis. Their linear properties have been systematically investigated by absorption spectra and fluorescence, the results show that the energy transfer takes place from the trans-4-[4‧-(N,N-diethylamino)styryl]-N-methyl pyridinium (2‧) cation to Tb(III). In addition, complex 2 exhibit a large two-photon absorption coefficient β: 0.044 cm/GW at 710 nm.

Solid-phase synthesis of compounds of europium and terbium with nitrogen-containing heterocyclic compounds under mechanical activation

International Nuclear Information System (INIS)

Kalinovskaya, I.V.; Karasev, V.E.

2000-01-01

Effect of solvents and parameters of mechanical treatment on basic regularities of synthesis of rare earth compounds with nitrogen-containing heterocyclic compounds is studied. It is shown that interaction on europium (3) and terbium (3) nitrates with nitrogen-containing heterocyclic compounds leads to formation of compounds of Ln(NO 3 )·2D composition, where Ln=Eu, Tb; D=2,2-dipyridyl, 1,10-phenanthroline, diphenylguanidine. Effect of conditions of mechanical treatment and different additions on process and yield of products is studied. Compounds prepared are characterized by the methods of chemical element analysis, IR spectroscopy and luminescent spectroscopy [ru

Site preference of rare earth doping in palladium-iron-arsenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Stuerzer, Christine; Schulz, Anne; Johrendt, Dirk [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany)

2014-12-15

The solid solutions (Ca{sub 1-y}RE{sub y}Fe{sub 1-x}Pd{sub x}As){sub 10}Pd{sub z}As{sub 8} with RE = La, Ce, and Pr were synthesized by solid state methods and characterized by X-ray powder diffraction with subsequent Rietveld refinements [(CaFeAs){sub 10}Pt{sub 3}As{sub 8}-type structure (''1038 type''), P anti 1, Z = 1]. Substitution levels (Ca/RE, Fe/Pd, and Pd/□) obtained from Rietveld refinements coincide well with the nominal values according to EDS and the linear courses of the lattice parameters as expected from the ionic radii. The RE atoms favor the one out of five calcium sites, which is eightfold coordinated by arsenic. This leads to significant stabilization of the structure, and especially prevents palladium over-doping in the iron-arsenide layers as observed in the pristine compound (CaFe{sub 1-x}Pd{sub x}As){sub 10}Pd{sub z}As{sub 8}. While the stabilization energy is estimated to about 40 kJ.mol{sup -1} by electronic structure calculations, the reason for the diminished Fe/Pd substitution through RE doping is still not yet understood. We suggest that the electrons transferred from RE{sup 3+} to the (Fe{sub 1-x}Pd{sub x})As layer makes higher palladium concentrations unfavorable. Anyway the reduced palladium doping enables superconductivity with critical temperatures up to 20 K (onset) in the RE doped Pd1038 samples, which could not be obtained earlier due to palladium over-doping in the active iron-arsenide layers. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Luminescent hybrid films obtained by covalent grafting of terbium complex to silica network

International Nuclear Information System (INIS)

Liu Fengyi; Fu Lianshe; Wang Jun; Liu Ze; Li Huanrong; Zhang Hongjie

2002-01-01

Luminescent hybrid thin films consisting of terbium complex covalently bonded to a silica-based network have been obtained in situ via a sol-gel approach. A new monomer, N-(4-benzoic acid-yl), N'-(propyltriethoxysilyl)urea (PABI), has been synthesized by grafting isocyanatopropyltriethoxysilane (ICPTES) to p-aminobenzoic acid and characterized by 1 H NMR, IR and MS. The monomer acts as a ligand for Tb 3+ ion and as a sol-gel precursor. Band emission from Tb 3+ ion due to an efficient ligand-to-metal energy transfer was observed by UV excitation. The decay curves of Tb 3+ in the hybrid films were measured. The energy difference between the triplet state energy of PABI and the 5 D 4 level of Tb 3+ ion falls in the exciting range to sensitize Tb 3+ ion fluorescence

Nanostructured Layered Terbium Hydroxide Containing NASIDs: In Vitro Physicochemical and Biological Evaluations.

Science.gov (United States)

Gu, Qing-Yang; Qiu, Xiao; Liu, Jing-Jing; Fu, Min; Chao, Jian-Ping; Ju, Rui-Jun; Li, Xue-Tao

2018-08-01

Diclofenac sodium (abrr. DS) and indomethacin (abrr. IMC) have been intercalated into the layered terbium hydroxide (LTbH) by anion exchange method. Chemical compositions, thermostability, morphology, luminescence property, release behaviors and cytotoxic effects have been investigated. The DS molecules may embed between layers with a bilayered arrangement and the IMC may correspond to a monolayered arrangement. The Tb3+ luminescence in DS-LTbH and IMC-LTbH composites were enhanced compared with LTbH precusor and the luminescence intensity increases with the deprotonation degree. Drug release was measured with HPLC, and LTbH showed sustained release behavior on both drugs. Further In Vitro evaluation were carried out on cancer cells. Cytotoxic effect of LTbH was observed with a sulforhodamine B colorimetric assay on a variety of cancer cell lines, which revealed that the LTbH showed little cytotoxic effect. Results indicate LTbH may offer a potential vehicle as an effective drug delivery system along with diagnostic integration.

Raman spectra of terbium trichloride, phosphorus pentachloride and their molten mixtures; Spektry kombinatsionnogo rasseyaniya sveta trikhlorida terbiya, pentakhlorida fosfora i ikh rasplavlennykh smesej

Energy Technology Data Exchange (ETDEWEB)

Salyulev, A B; Zakir' yanova, I D [UrO RAN, Inst. Vysokotemperaturnoj Ehlektrokhimii, Ekaterinburg (Russian Federation)

2008-03-15

Raman spectroscopy was used to study in situ the behavior of individual terbium trichloride and phosphorus pentachloride in different aggregative states as a function of temperature, and of solutions of PCl{sub 5} vapors in molten TbCl{sub 3}. A conclusion is drawn about their structure and the nature of phase transformations and chemical reactions in wide ranges of temperature and saturated vapor pressures.

Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

International Nuclear Information System (INIS)

Mih, R.; Gronsky, R.; Sterne, P.A.

1995-01-01

Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

Thermoluminescence of cerium and terbium -doped calcium pyrophosphate

Energy Technology Data Exchange (ETDEWEB)

Roman L, J.; Cruz Z, E. [UNAM, Instituto de Ciencias Nucleares, Circuito Exterior, Ciudad Universitaria, 04510 Mexico D. F. (Mexico); Lozano R, I. B.; Diaz G, J. A. I., E-mail: jesus.roman@nucleares.unam.mx [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Av. Legaria No. 694, 11500 Mexico D. F. (Mexico)

2015-10-15

The aim of this work is to report the thermoluminescence (Tl) response of Calcium Pyrophosphate phosphor doped with Cerium and Terbium impurities (Ca{sub 2}P{sub 2}O{sub 7}:Ce{sup 3+},Tb{sup 3+}). The phosphors were synthesized using the co-precipitation method and annealed at 900 degrees C by two hours for obtain the β phase. The intentional doping with Ce and Tb ions was 1 at.% and 0.1 at.%, whereas in the EDS results the concentration of impurities was 0.39 at.% and 0.05 at.%, respectively. The superficial morphology of phosphor is mainly composed by thin wafers of different size. All samples were exposed to gamma rays from {sup 60}Co in the Gammacell-200 irradiator. The Tl response of the phosphor was measured from Rt up to 350 degrees C and under nitrogen atmosphere in a Harshaw TLD 3500 reader. The glow curves of the Ca{sub 2}P{sub 2}O{sub 7}:Ce{sup 3+},Tb{sup 3+} powders showed a broad intense Tl peak centered at 165 degrees C and a shoulder at approximate 260 degrees C was observed. A linear Tl response in the range of absorbed dose of 0.2 to 10 Gy was obtained. Tl glow curves were analyzed using the initial rise (IR)and computerized glow curve deconvolution methods to evaluate the kinetics parameters such as activation energy (E), frequency factor (s) and kinetic order (b). (Author)

Effects of time on the magnetic properties of terbium-doped LaMnO3

International Nuclear Information System (INIS)

Liu Weibin; Zhang Yingtang; Guan Wen; Kinsman, William; Yuan Xinqiang; Chen Ziyu

2012-01-01

The magnetic properties of the perovskite form of LaMnO 3 have been shown strong interest in recent years due to its high potential for use in magnetic devices. In this paper, the magnetic properties of a 30% terbium-doped LaMnO 3 (LMTO) perovskite manganite synthesized by a conventional solid-state reaction were investigated. Data on these properties was recorded periodically via SQUID and VSM to reveal it to be best described magnetically as a spin glass system. Thus, the time effect must be taken into consideration in instantaneously determining this material’s spin glass state as well as the overall magnetic properties in the absence of a magnetic field. The results of this paper point to a more in-depth understanding of the change in magnetic properties associated with doped LaMnO 3 .

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

Science.gov (United States)

Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

2017-10-01

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

Influence of crystallite size and temperature on the antiferromagnetic helices of terbium and holmium metal

Energy Technology Data Exchange (ETDEWEB)

Bick, Jens-Peter; Michels, Andreas [Universitaet des Saarlandes, D-66041 Saarbruecken (Germany); University of Luxembourg, L-1511 Luxembourg (Luxembourg); Ferdinand, Adrian; Birringer, Rainer [Universitaet des Saarlandes, D-66041 Saarbruecken (Germany); Baller, Joerg; Sanctuary, Roland [University of Luxembourg, L-1511 Luxembourg (Luxembourg); Philippi, Stefan [Leibniz Institute for Solid State and Materials Research, D-01069 Dresden (Germany); Lott, Dieter [GKSS Research Center, D-21502 Geesthacht (Germany); Balog, Sandor [Paul Scherrer Institute, CH-5232 Villigen (Switzerland); Rotenberg, Eli [Lawrence Berkeley National Laboratory, California 94720 (United States); Kaindl, Guenter [Freie Universitaet Berlin, D-14195 Berlin-Dahlem (Germany); Doebrich, Kristian M. [Freie Universitaet Berlin, D-14195 Berlin-Dahlem (Germany); Max-Born-Institut, D-12489 Berlin (Germany)

2011-07-01

We report on the results of grain-size and temperature-dependent magnetization, specific-heat, neutron-scattering, and angle-resolved photoelectron spectroscopy (ARPES) experiments on the heavy rare-earth metals terbium and holmium, with particular emphasis on the temperature regions where the helical antiferromagnetic phases exist. In contrast to Ho, we find that the helical structure in Tb is relative strongly affected by microstructural disorder, specifically, it can no longer be detected for the smallest studied grain size of D=18 nm. Moreover, in coarse-grained Tb a helical structure persists even in the ferromagnetic regime, down to about T=215 K, in agreement with the ARPES data, which reveal a nesting feature of the Fermi surface at the L point of the Brillouin zone at T=210 K.

Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

Directory of Open Access Journals (Sweden)

A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

2007-01-01

Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

Maskless proton beam writing in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

2007-07-15

Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

Maskless proton beam writing in gallium arsenide

International Nuclear Information System (INIS)

Mistry, P.; Gomez-Morilla, I.; Smith, R.C.; Thomson, D.; Grime, G.W.; Webb, R.P.; Gwilliam, R.; Jeynes, C.; Cansell, A.; Merchant, M.; Kirkby, K.J.

2007-01-01

Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Ramon M. delos Santos

2008-06-01

Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

Solubility of platinum-arsenide melt and sperrylite in synthetic basalt at 0.1 MPa and 1200 °C with implications for arsenic speciation and platinum sequestration in mafic igneous systems

Science.gov (United States)

Canali, A. C.; Brenan, J. M.; Sullivan, N. A.

2017-11-01

To better understand the Pt-As association in natural magmas, experiments were done at 1200 °C and 0.1 MPa to measure the solubility of Pt and Pt-arsenide phases (melt and sperrylite, PtAs2), as well as to determine the oxidation state, and identify evidence for Pt-As complexing, in molten silicate. Samples consisting of synthetic basalt contained in chromite crucibles were subject to three experimental procedures. In the first, platinum solubility in the synthetic basalt was determined without added arsenic by equilibrating the sample with a platinum source (embedded wire or bead) in a gas-mixing furnace. In the second, the sample plus a Pt-arsenide source was equilibrated in a vacuum-sealed fused quartz tube containing a solid-oxide oxygen buffer. The third approach involved two steps: first equilibrating the sample in a gas-mixing furnace, then with added arsenide melt in a sealed quartz tube. Oxygen fugacity was estimated in the latter step using chromite/melt partitioning of vanadium. Method two experiments done at high initial arsenic activity (PtAs melt + PtAs2), showed significant loss of arsenic from the sample, the result of vapour transfer to newly-formed arsenide phases in the buffer. Method three experiments showed no loss of arsenic, yielding a uniform final distribution in the sample. Analyses of run-product glasses from experiments which did not show arsenic loss reveal significant increase in arsenic concentrations with fO2, varying from ∼10 ppm (FMQ-3.25) to >10,000 ppm (FMQ + 5.5). Despite very high arsenic loadings (>1000 ppm), the solubility of Pt is similar in arsenic-bearing and arsenic-free glasses. The variation in arsenic solubility with fO2 shows a linear relationship, that when corrected for the change in the activity of dissolved arsenic with the melt ferric/ferrous ratio, yields a solubility-fO2 relationship consistent with As3+ as the dissolved species. This result is confirmed by X-ray absorption near edge structure (XANES

Effects of time on the magnetic properties of terbium-doped LaMnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Liu Weibin [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Zhang Yingtang, E-mail: zhangyingtang76@mail.xjtu.edu.cn [School of Material Science and Engineering, Institute of Functional Material, Shaanxi University of Technology, Hanzhong 723003 (China); State Key Laboratory of Electrical Insulation and Power Equipment and MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049 (China); Guan Wen [State Key Laboratory of Electrical Insulation and Power Equipment and MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049 (China); Kinsman, William [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Yuan Xinqiang [School of Material Science and Engineering, Institute of Functional Material, Shaanxi University of Technology, Hanzhong 723003 (China); Chen Ziyu [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China)

2012-09-01

The magnetic properties of the perovskite form of LaMnO{sub 3} have been shown strong interest in recent years due to its high potential for use in magnetic devices. In this paper, the magnetic properties of a 30% terbium-doped LaMnO{sub 3} (LMTO) perovskite manganite synthesized by a conventional solid-state reaction were investigated. Data on these properties was recorded periodically via SQUID and VSM to reveal it to be best described magnetically as a spin glass system. Thus, the time effect must be taken into consideration in instantaneously determining this material's spin glass state as well as the overall magnetic properties in the absence of a magnetic field. The results of this paper point to a more in-depth understanding of the change in magnetic properties associated with doped LaMnO{sub 3}.

Sensitivity improvement of Cerenkov luminescence endoscope with terbium doped Gd{sub 2}O{sub 2}S nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Cao, Xin; Chen, Xueli, E-mail: xlchen@xidian.edu.cn, E-mail: jimleung@mail.xidian.edu.cn; Cao, Xu; Zhan, Yonghua; Liang, Jimin, E-mail: xlchen@xidian.edu.cn, E-mail: jimleung@mail.xidian.edu.cn [Engineering Research Center of Molecular and Neuro Imaging of the Ministry of Education and School of Life Science and Technology, Xidian University, Xi' an, Shaanxi 710071 (China); Kang, Fei; Wang, Jing [Department of Nuclear Medicine, Xijing Hospital, Fourth Military Medical University, Xi' an, Shaanxi 710032 (China); Wu, Kaichun [Department of Digestive Diseases, Xijing Hospital, Fourth Military Medical University, Xi' an, Shaanxi 710032 (China)

2015-05-25

Our previous study showed a great attenuation for the Cerenkov luminescence endoscope (CLE), resulting in relatively low detection sensitivity of radiotracers. Here, a kind of radioluminescence nanoparticles (RLNPs), terbium doped Gd{sub 2}O{sub 2}S was mixed with the radionuclide {sup 68}Ga to enhance the intensity of emitted luminescence, which finally improved the detection sensitivity of the CLE by using the radioluminescence imaging technique. With the in vitro and in vivo pseudotumor experiments, we showed that the use of RLNPs mixed with the radionuclide {sup 68}Ga enabled superior sensitivity compared with the radionuclide {sup 68}Ga only, with 50-fold improvement on detection sensitivity, which guaranteed meeting the demands of the clinical diagnosis of gastrointestinal tract tumors.

Quantum oscillations in the parent magnetic phase of an iron arsenide high temperature superconductor

International Nuclear Information System (INIS)

Sebastian, Suchitra E; Gillett, J; Lau, P H C; Lonzarich, G G; Harrison, N; Mielke, C H; Singh, D J

2008-01-01

We report measurements of quantum oscillations in SrFe 2 As 2 -which is an antiferromagnetic parent of the iron arsenide family of superconductors-known to become superconducting under doping and the application of pressure. The magnetic field and temperature dependences of the oscillations between 20 and 55 T in the liquid helium temperature range suggest that the electronic excitations are those of a Fermi liquid. We show that the observed Fermi surface comprising small pockets is consistent with the formation of a spin-density wave. Our measurements thus demonstrate that high T c superconductivity can occur on doping or pressurizing a conventional metallic spin-density wave state. (fast track communication)

Sonochemical synthesis of terbium tungstate for developing high power supercapacitors with enhanced energy densities.

Science.gov (United States)

Sobhani-Nasab, Ali; Rahimi-Nasrabadi, Mehdi; Naderi, Hamid Reza; Pourmohamadian, Vafa; Ahmadi, Farhad; Ganjali, Mohammad Reza; Ehrlich, Hermann

2018-07-01

Sonochemically prepared nanoparticles of terbium tungstate (TWNPs) were evaluated through scanning electron microscopy (SEM), thermogravimetric analysis (TGA), X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR), UV-Vis spectroscopy, and the optimal products were further characterized in terms of their electrochemical properties using conventional and continuous cyclic voltammetry (CV, and CCV), galvanostatic charge/discharge technique, and electrochemical impedance spectroscopy (EIS). The CV studies indicated the TWNPs to have specific capacitance (SC) values of 336 and 205 F g -1 at 1 and 200 mV s -1 , and galvanostatic charge-discharge tests revealed the SC of the TWNP-based electrodes to be 300 F g -1 at 1 Ag -1 . Also continuous cyclic voltammetry evaluations proved the sample as having a capacitance retention value of 95.3% after applying 4000 potential cycles. In the light of the results TWNPs were concluded as favorable electrode materials for use in hybrid vehicle systems. Copyright © 2018 Elsevier B.V. All rights reserved.

Study of the nucleotide binding site of the yeast Schizosaccharomyces pombe plasma membrane H+-ATPase using formycin triphosphate-terbium complex

International Nuclear Information System (INIS)

Ronjat, M.; Lacapere, J.J.; Dufour, J.P.; Dupont, Y.

1987-01-01

The plasma membrane of yeasts contains an H+-ATPase similar to the other cation transport ATPases of eukaryotic organisms. This enzyme has been purified and shows H+ transport in reconstituted vesicles. In the presence of Mg2+, formycin triphosphate (FTP) is hydrolyzed by the H+-ATPase and supports H+ transport. When combined with terbium ion, FTP (Tb-FTP) and ATP (Tb-ATP) are no longer hydrolyzed. Competition between Mg-ATP and Tb-FTP for ATP hydrolysis indicates that terbium-associated nucleotides bind to the catalytic site of the H+-ATPase. The fluorescent properties of the Tb-FTP complex were used to study the active site of the H+-ATPase. Fluorescence of Tb-FTP is greatly enhanced upon binding into the nucleotide site of H+-ATPase with a dissociation constant of 1 microM. Tb-ATP, Tb-ADP, and Tb-ITP are competitive inhibitors of Tb-FTP binding with Ki = 4.5, 5.0, and 6.0 microM, respectively. Binding of Tb-FTP is observed only in the presence of an excess of Tb3+ with an activation constant Ka = 25 microM for Tb3+. Analysis of the data reveals that the sites for Tb-FTP and Tb3+ binding are independent entities. In standard conditions these sites would be occupied by Mg-ATP and Mg2+, respectively. These findings suggest an important regulatory role of divalent cations on the activity of H+-ATPase. Replacement of H 2 O by D 2 O in the medium suggests the existence of two types of nucleotide binding sites differing by the hydration state of the Tb3+ ion in the bound Tb-FTP complex

Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

Science.gov (United States)

Bhasin, K. B.; Connolly, D. J.

1986-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

Direct observation of the orbital spin Kondo effect in gallium arsenide quantum dots

Science.gov (United States)

Shang, Ru-Nan; Zhang, Ting; Cao, Gang; Li, Hai-Ou; Xiao, Ming; Guo, Guang-Can; Guo, Guo-Ping

2018-02-01

Besides the spin Kondo effect, other degrees of freedom can give rise to the pseudospin Kondo effect. We report a direct observation of the orbital spin Kondo effect in a series-coupled gallium arsenide (GaAs) double quantum dot device where orbital degrees act as pseudospin. Electron occupation in both dots induces a pseudospin Kondo effect. In a region of one net spin impurity, complete spectra with three resonance peaks are observed. Furthermore, we observe a pseudo-Zeeman effect and demonstrate its electrical controllability for the artificial pseudospin in this orbital spin Kondo process via gate voltage control. The fourfold degeneracy point is realized at a specific value supplemented by spin degeneracy, indicating a transition from the SU(2) to the SU(4) Kondo effect.

Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

Energy Technology Data Exchange (ETDEWEB)

Azam, Sikander; Khan, Saleem Ayaz [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States)

2015-10-15

Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

Complete Stokes polarimetry of magneto-optical Faraday effect in a terbium gallium garnet crystal at cryogenic temperatures.

Science.gov (United States)

Majeed, Hassaan; Shaheen, Amrozia; Anwar, Muhammad Sabieh

2013-10-21

We report the complete determination of the polarization changes caused in linearly polarized incident light due to propagation in a magneto-optically active terbium gallium garnet (TGG) single crystal, at temperatures ranging from 6.3 to 300 K. A 28-fold increase in the Verdet constant of the TGG crystal is seen as its temperature decreases to 6.3 K. In contrast with polarimetry of light emerging from a Faraday material at room temperature, polarimetry at cryogenic temperatures cannot be carried out using the conventional fixed polarizer-analyzer technique because the assumption that ellipticity is negligible becomes increasingly invalid as temperature is lowered. It is shown that complete determination of light polarization in such a case requires the determination of its Stokes parameters, otherwise inaccurate measurements will result with negative implications for practical devices.

Damage structure of gallium arsenide irradiated in a high-voltage electron microscope

International Nuclear Information System (INIS)

Loretto, D.; Loretto, M.H.

1989-01-01

Semi-insulating undoped gallium arsenide has been irradiated in a high-voltage electron microscope between room temperature and about 500 0 C for doses of up to 5 x 10 22 electrons cm -2 at 1 MeV. Room-temperature irradiation produces small (less than 5 nm) damage clusters. As the temperature of the irradiation is increased, the size of these clusters increases, until at about 300 0 C a high density of dislocation loops can be resolved. The dislocation loops, 20 nm or less in diameter, which are produced at about 500 0 C have been analysed in a bright field using a two-beam inside-outside method which minimises the tilt necessary between micrographs. It is concluded that the loops are an interstitial perfect-edge type with a Burgers vector of (a/2) . (author)

Picomolar traces of americium(III) introduce drastic changes in the structural chemistry of terbium(III). A break in the ''gadolinium break''

Energy Technology Data Exchange (ETDEWEB)

Welch, Jan M. [TU Wien, Atominstitut, Vienna (Austria); Mueller, Danny; Knoll, Christian; Wilkovitsch, Martin; Weinberger, Peter [TU Wien, Institute of Applied Synthetic Chemistry, Vienna (Austria); Giester, Gerald [University of Vienna, Institute of Mineralogy and Crystallography, Vienna (Austria); Ofner, Johannes; Lendl, Bernhard [TU Wien, Institute of Chemical Technologies and Analytics, Vienna (Austria); Steinhauser, Georg [Leibniz Universitaet Hannover, Institute of Radioecology and Radiation Protection (Germany)

2017-10-16

The crystallization of terbium 5,5{sup '}-azobis[1H-tetrazol-1-ide] (ZT) in the presence of trace amounts (ca. 50 Bq, ca. 1.6 pmol) of americium results in 1) the accumulation of the americium tracer in the crystalline solid and 2) a material that adopts a different crystal structure to that formed in the absence of americium. Americium-doped [Tb(Am)(H{sub 2}O){sub 7}ZT]{sub 2} ZT.10 H{sub 2}O is isostructural to light lanthanide (Ce-Gd) 5,5{sup '}-azobis[1H-tetrazol-1-ide] compounds, rather than to the heavy lanthanide (Tb-Lu) 5,5{sup '}-azobis[1H-tetrazol-1-ide] (e.g., [Tb(H{sub 2}O){sub 8}]{sub 2}ZT{sub 3}.6 H{sub 2}O) derivatives. Traces of Am seem to force the Tb compound into a structure normally preferred by the lighter lanthanides, despite a 10{sup 8}-fold Tb excess. The americium-doped material was studied by single-crystal X-ray diffraction, vibrational spectroscopy, radiochemical neutron activation analysis, and scanning electron microscopy. In addition, the inclusion properties of terbium 5,5{sup '}-azobis[1H-tetrazol-1-ide] towards americium were quantified, and a model for the crystallization process is proposed. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Solar Thermochemical Hydrogen Production via Terbium Oxide Based Redox Reactions

Directory of Open Access Journals (Sweden)

Rahul Bhosale

2016-01-01

Full Text Available The computational thermodynamic modeling of the terbium oxide based two-step solar thermochemical water splitting (Tb-WS cycle is reported. The 1st step of the Tb-WS cycle involves thermal reduction of TbO2 into Tb and O2, whereas the 2nd step corresponds to the production of H2 through Tb oxidation by water splitting reaction. Equilibrium compositions associated with the thermal reduction and water splitting steps were determined via HSC simulations. Influence of oxygen partial pressure in the inert gas on thermal reduction of TbO2 and effect of water splitting temperature (TL on Gibbs free energy related to the H2 production step were examined in detail. The cycle (ηcycle and solar-to-fuel energy conversion (ηsolar-to-fuel efficiency of the Tb-WS cycle were determined by performing the second-law thermodynamic analysis. Results obtained indicate that ηcycle and ηsolar-to-fuel increase with the decrease in oxygen partial pressure in the inert flushing gas and thermal reduction temperature (TH. It was also realized that the recuperation of the heat released by the water splitting reactor and quench unit further enhances the solar reactor efficiency. At TH=2280 K, by applying 60% heat recuperation, maximum ηcycle of 39.0% and ηsolar-to-fuel of 47.1% for the Tb-WS cycle can be attained.

Terbium(III)/gold nanocluster conjugates: the development of a novel ratiometric fluorescent probe for mercury(II) and a paper-based visual sensor.

Science.gov (United States)

Qi, Yan-Xia; Zhang, Min; Zhu, Anwei; Shi, Guoyue

2015-08-21

In this work, a novel ratiometric fluorescent probe was developed for rapid, highly accurate, sensitive and selective detection of mercury(II) (Hg(2+)) based on terbium(III)/gold nanocluster conjugates (Tb(3+)/BSA-AuNCs), in which bovine serum albumin capped gold nanoclusters (BSA-AuNCs) acted as the signal indicator and terbium(III) (Tb(3+)) was used as the build-in reference. Our proposed ratiometric fluorescent probe exhibited unique specificity toward Hg(2+) against other common environmentally and biologically important metal ions, and had high accuracy and sensitivity with a low detection limit of 1 nM. In addition, our proposed probe was effectively employed to detect Hg(2+) in the biological samples from the artificial Hg(2+)-infected rats. More significantly, an appealing paper-based visual sensor for Hg(2+) was designed by using filter paper embedded with Tb(3+)/BSA-AuNC conjugates, and we have further demonstrated its feasibility for facile fluorescent sensing of Hg(2+) in a visual format, in which only a handheld UV lamp is used. In the presence of Hg(2+), the paper-based visual sensor, illuminated by a handheld UV lamp, would undergo a distinct fluorescence color change from red to green, which can be readily observed with naked eyes even in trace Hg(2+) concentrations. The Tb(3+)/BSA-AuNC-derived paper-based visual sensor is cost-effective, portable, disposable and easy-to-use. This work unveiled a facile approach for accurate, sensitive and selective measuring of Hg(2+) with self-calibration.

Determination of frequencies of atomic oscillations along the fourth order symmetry axis in indium arsenide according to thermal diffusion scattering of X-rays

International Nuclear Information System (INIS)

Orlova, N.S.

1978-01-01

Intensity of diffusion scattering of X-rays from the plane of a monocrystal of indium arsenide has been measured on the monochromatized CuKsub(α)-radiation. The samples are made of Cl indium arsenide monocrystal of the n-type with the 1x10 18 cm -3 concentration of carriers in the form of a plate with the polished parallel cut-off with the +-5' accuracy. The investigations have been carried out on the URS-5 IM X-ray diffractometer at room temperature in vacuum. Intensities of thermal diffusion scattering of the second order have been calculated by the two-atomic chain model with different mass and four interaction paramaters. Based upon the analysis of intensity of single-phonon diffusion scattering the curves of frequencies of atomic oscillations along the direction [100] have been determined. The values of frequencies obtained experimentally on the thermal diffusion scattering of X-rays are in a satisfactory agreement with the calculated data. The frequencies obtained are compared with the results of calculation and the analysis of multiphonon spectra of IR-absorption made elsewhere

Preparation and luminescence properties of terbium-doped lanthanum oxide nanofibers by electrospinning

Energy Technology Data Exchange (ETDEWEB)

Song Lixin; Du Pingfan [Key Laboratory of Advanced Textile Materials and Manufacturing Technology (Zhejiang Sci-Tech University), Ministry of Education, Hangzhou 310018 (China); Xiong Jie, E-mail: jxiong@zstu.edu.cn [Key Laboratory of Advanced Textile Materials and Manufacturing Technology (Zhejiang Sci-Tech University), Ministry of Education, Hangzhou 310018 (China); Fan Xiaona; Jiao Yuxue [Key Laboratory of Advanced Textile Materials and Manufacturing Technology (Zhejiang Sci-Tech University), Ministry of Education, Hangzhou 310018 (China)

2012-01-15

Terbium-doped lanthanum oxide (La{sub 2}O{sub 3}:Tb{sup 3+}) nanofibers were prepared by electrospinning followed by calcination at high temperature. Thermogravimetric analyzer (TGA), field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), and photoluminescence (PL) were used to characterize the obtained fibers. The results reveal that the nanofibers have an average diameter of ca. 95{+-}25 nm and are composed of pure La{sub 2}O{sub 3} phase. Under the excitation of 274 nm light, the La{sub 2}O{sub 3}:Tb{sup 3+} nanofibers exhibit the characteristic emission resulting from the {sup 5}D{sub 4}{yields}{sup 7}F{sub J} (J=3, 4, 5, 6) transitions of Tb{sup 3+} ions. And the PL emission intensity is stronger than that of their nanoparticle counterparts. - Highlights: > Tb{sup 3+}-doped La{sub 2}O{sub 3} (La{sub 2}O{sub 3}:Tb{sup 3+}) fluorescent nanofibers were prepared via a simple electrospinning technique. > Luminescent properties and other characteristics of the nanofibers were investigated in details. > Potential applications of La{sub 2}O{sub 3}:Tb{sup 3+} nanofibers and electrospinning technique described in this paper are suggested.

Sensitization effects of supramolecular assemblies on the luminescence of terbium-ion prulifloxacin complexes

Energy Technology Data Exchange (ETDEWEB)

Wang Hong; Yi Chongyue; Li Xue; Fang Fang [School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Yang Yajiang, E-mail: yjyang@mail.hust.edu.c [School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2011-04-15

Luminescence enhancement of terbium-ion prulifloxacin complexes (Tb(III)-PUFX) in supramolecular hydrogels formed by assembly of 1,3:2,4-di-O-benzylidene-D-sorbitol (DBS) was investigated by steady-state fluorescence, varying temperature fluorescence and time-resolved fluorescence. The luminescence images show that Tb(III)-PUFX were dispersed in the DBS gels. The luminescence intensity of Tb(III)-PUFX in the DBS gels was significantly increased in comparison with that in corresponding aqueous solutions. The varying temperature fluorescent spectra show that the luminescence intensity of Tb(III)-PUFX decreased with an increase in the temperature. This implies that the luminescence enhancement of Tb(III)-PUFX is related to the dissociation and the formation of the DBS assemblies. Time-resolved fluorescence measurements show slower rotational motion in DBS gels in comparison with that in the corresponding aqueous solutions. This may be ascribed to a unique microstructure of three-dimensional network formed by DBC aggregates, resulting in deactivation of the nonradiative relaxation. The images of field emission scanning electron microscopy and polarized optical microscopy indicate that the morphology of the DBS assemblies was not influenced upon addition of Tb(III)-PUFX to the DBS gels.

Phase diagram of (Li(1-x)Fe(x))OHFeSe: a bridge between iron selenide and arsenide superconductors.

Science.gov (United States)

Dong, Xiaoli; Zhou, Huaxue; Yang, Huaixin; Yuan, Jie; Jin, Kui; Zhou, Fang; Yuan, Dongna; Wei, Linlin; Li, Jianqi; Wang, Xinqiang; Zhang, Guangming; Zhao, Zhongxian

2015-01-14

Previous experimental results have shown important differences between iron selenide and arsenide superconductors which seem to suggest that the high-temperature superconductivity in these two subgroups of iron-based families may arise from different electronic ground states. Here we report the complete phase diagram of a newly synthesized superconducting (SC) system, (Li1-xFex)OHFeSe, with a structure similar to that of FeAs-based superconductors. In the non-SC samples, an antiferromagnetic (AFM) spin-density-wave (SDW) transition occurs at ∼127 K. This is the first example to demonstrate such an SDW phase in an FeSe-based superconductor system. Transmission electron microscopy shows that a well-known √5×√5 iron vacancy ordered state, resulting in an AFM order at ∼500 K in AyFe2-xSe2 (A = metal ions) superconductor systems, is absent in both non-SC and SC samples, but a unique superstructure with a modulation wave vector q = (1)/2(1,1,0), identical to that seen in the SC phase of KyFe2-xSe2, is dominant in the optimal SC sample (with an SC transition temperature Tc = 40 K). Hence, we conclude that the high-Tc superconductivity in (Li1-xFex)OHFeSe stems from the similarly weak AFM fluctuations as FeAs-based superconductors, suggesting a universal physical picture for both iron selenide and arsenide superconductors.

Semiconducting icosahedral boron arsenide crystal growth for neutron detection

Science.gov (United States)

Whiteley, C. E.; Zhang, Y.; Gong, Y.; Bakalova, S.; Mayo, A.; Edgar, J. H.; Kuball, M.

2011-03-01

Semiconducting icosahedral boron arsenide, B12As2, is an excellent candidate for neutron detectors, thermoelectric converters, and radioisotope batteries, for which high quality single crystals are required. Thus, the present study was undertaken to grow B12As2 crystals by precipitation from metal solutions (nickel) saturated with elemental boron (or B12As2 powder) and arsenic in a sealed quartz ampoule. B12As2 crystals of 10-15 mm were produced when a homogeneous mixture of the three elements was held at 1150 °C for 48-72 h and slowly cooled (3.5 °C/h). The crystals varied in color and transparency from black and opaque to clear and transparent. X-ray topography (XRT), and elemental analysis by energy dispersive X-ray spectroscopy (EDS) confirmed that the crystals had the expected rhombohedral structure and chemical stoichiometry. The concentrations of residual impurities (nickel, carbon, etc.) were low, as measured by Raman spectroscopy and secondary ion mass spectrometry (SIMS). Additionally, low etch-pit densities (4.4×107 cm-2) were observed after etching in molten KOH at 500 °C. Thus, the flux growth method is viable for growing large, high-quality B12As2 crystals.

Fluorometric determination of proteins using the terbium (III)-2-thenoyltrifluoroacetone-sodium dodecyl benzene sulfonate-protein system

Energy Technology Data Exchange (ETDEWEB)

Jia Zhen [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China); Department of Chemistry, Dezhou University, Dezhou 253023 (China); Yang Jinghe [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China)]. E-mail: yjh@sdu.edu.cn; Wu Xia [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China); Wang Fei [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China); Guo Changying [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China); Liu Shufang [Key Laboratory of Colloid and Interface Chemistry of Education Ministry, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China)

2006-12-15

It is found that in hexamethylene tetramine (HMTA)-HCl buffer of pH=8.00, proteins can enhance the fluorescence of terbium (III) (Tb{sup 3+})-2-thenoyltrifluoroacetone (TTA)-sodium dodecyl benzene sulfonate (SDBS) system. Based on this, a sensitive method for the determination of proteins is proposed. The experiments indicate that under the optimum conditions, the enhanced fluorescence intensity is in proportion to the concentration of proteins in the range of 4.0x10{sup -9}-7.5x10{sup -6}g/mL for bovine serum albumin (BSA), 5.0x10{sup -9}-1.5x10{sup -5}g/mL for human serum albumin (HSA), 1.0x10{sup -8}-7.5x10{sup -6}g/mL for egg albumin (EA). Their detection limits (S/N=3) are 0.5, 0.8 and 2.0ng/mL, respectively. The interaction mechanism is also studied.

Spectrofluorimetric determination of trace amount of coenzyme II using ciprofloxacin-terbium complex as a fluorescent probe

International Nuclear Information System (INIS)

Bian Weiwei; Wang Yusheng; Zhu Xiaojing; Jiang Chongqiu

2006-01-01

A new spectrofluorimetric method was developed for the determination of trace amount of nicotinamide adenine dinucleotide phosphate (NADP). Using terbium ion (Tb 3+ )-ciprofloxacin (CIP) complex as a fluorescent probe, in the buffer solution of pH=9.00, NADP can remarkably enhance the fluorescence intensity of the Tb 3+ -CIP complex at λ=545nm and the enhanced fluorescence intensity of Tb 3+ ion is in proportion to the concentration of NADP. Optimum conditions for the determination of NADP were also investigated. The dynamic range for the determination of NADP is 4.9x10 -7 -3.7x10 -6 molL -1 with detection limit of 1.3x10 -7 molL -1 . This method is simple, practical and relatively free interference from coexisting substances and can be successfully applied to determination of NADP in synthetic water samples. Moreover, the enhancement mechanisms of the fluorescence intensity in the Tb 3+ -CIP system and the Tb 3+ -CIP-NADP system have been also discussed

Seeded growth of boron arsenide single crystals with high thermal conductivity

Science.gov (United States)

Tian, Fei; Song, Bai; Lv, Bing; Sun, Jingying; Huyan, Shuyuan; Wu, Qi; Mao, Jun; Ni, Yizhou; Ding, Zhiwei; Huberman, Samuel; Liu, Te-Huan; Chen, Gang; Chen, Shuo; Chu, Ching-Wu; Ren, Zhifeng

2018-01-01

Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W m-1 K-1 at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m-1 K-1 at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.

A search for long-lived radionuclides produced by fast-neutron irradiations of copper, silver, europium, terbium, and hafnium

International Nuclear Information System (INIS)

Meadows, J.W.; Smith, D.L.; Ikeda, Y.; Konno, C.

1990-01-01

Identical sample packets, each containing samples of elemental copper, silver, europium, terbium, and hafnium, as well as titanium, iron and nickel as dosimeters, have been irradiated in three distinct accelerator neutron fields (at Argonne National Laboratory and Los Alamos National Laboratory in the U.S.A., and Japan Atomic Energy Research Institute, Tokai, Japan) as part of an interlaboratory research collaboration to search for the production of long-lived radionuclides for fusion waste disposal applications. This paper is a progress report on this project. To date, we have detected the following activities, and have obtained preliminary experimental cross section values for several of these: Ag-106m,108m,110m; Eu-150m,152g,154; Tb-158,160; and Hf-175,178m2,179m2,181. (author). 11 refs, 1 fig., 4 tabs

Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures

Science.gov (United States)

Dunaev, A. V.; Murin, D. B.

2018-04-01

Halogen-containing plasmas are often used to form topological structures on semiconductor surfaces; therefore, spectral monitoring of the etching process is an important diagnostic tool in modern electronics. In this work, the emission spectra of gas discharges in mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconducting gallium arsenide plate were studied. Spectral lines and bands of the GaAs etching products appropriate for monitoring the etching rate were determined. It is shown that the emission intensity of the etching products is proportional to the GaAs etching rate in plasmas of HCl mixtures with Ar and Cl2, which makes it possible to monitor the etching process in real time by means of spectral methods.

Normal vibrations in gallium arsenide

International Nuclear Information System (INIS)

Dolling, G.; Waugh, J.L.T.

1964-01-01

The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296 o K. The frequencies of normal modes of vibration propagating in the [ζ00], (ζζζ], and (0ζζ] crystal directions have been determined with a precision of between 1 and 2·5 per cent. A limited number of normal modes have also been studied at 95 and 184 o K. Considerable difficulty was experienced in obtaining welt resolved neutron peaks corresponding to the two non-degenerate optic modes for very small wave-vector, particularly at 296 o K. However, from a comparison of results obtained under various experimental conditions at several different points in reciprocal space, frequencies (units 10 12 c/s) for these modes (at 296 o K) have been assigned: T 8·02±0·08 and L 8·55±02. Other specific normal modes, with their measured frequencies are (a) (1,0,0): TO 7·56 ± 008, TA 2·36 ± 0·015, LO 7·22 ± 0·15, LA 6·80 ± 0·06; (b) (0·5, 0·5, 0·5): TO 7·84 ± 0·12, TA 1·86 ± 0·02, LO 7·15 ± 0·07, LA 6·26 ± 0·10; (c) (0, 0·65, 0·65): optic 8·08 ±0·13, 7·54 ± 0·12 and 6·57 ± 0·11, acoustic 5·58 ± 0·08, 3·42 · 0·06 and 2·36 ± 004. These results are generally slightly lower than the corresponding frequencies for germanium. An analysis in terms of various modifications of the dipole approximation model has been carried out. A feature of this analysis is that the charge on the gallium atom appears to be very small, about +0·04 e. The frequency distribution function has been derived from one of the force models. (author)

A Terbium Sensitized Luminescence Method for the Assay of Flubiprofen in Pharmaceutical Formulations

Directory of Open Access Journals (Sweden)

Salma M.Z. Al-Kindy

2014-12-01

Full Text Available A sensitive time-resolved luminescence method for the determination of flubiprofen (FLP in methanol and in aqueous solution is described. The method is based on the luminescence sensitization of terbium (Tb3+ by the formation of a ternary complex with FLP in the presence of 4,7 diphenyl 1,10 phenanthroline (DPP as co-ligand, and Tween-20 as surfactant. The signal for Tb-FLP-DPP was monitored at λex  = 285 nm and λem  = 552 nm. Optimum conditions for the formation of the complex in an aqueous system were TRIS buffer, pH 8.0, DPP (2.5Å~10−7  M, Tween-20 (0.30% and 4Å~10-5  mol L-1  of Tb3+  which allowed the determination of 20–1000 ng mL-1  of FLP with a limit of detection (LOD of 10 ng mL-1 . The relative standard deviations of the method ranged between 0.6 and 1.4% indicating excellent reproducibility of the method. The proposed method was successfully applied for the assays of FLP in pharmaceutical formulations and spiked tap water samples with average recoveries of 87% – 95%.

Evidence of mass exchange between inside and outside of sonoluminescing bubble in aqueous solution of terbium chloride

Energy Technology Data Exchange (ETDEWEB)

Liang, Jinfu, E-mail: liang.shi2007@163.com [School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001 (China); Chen, Weizhong, E-mail: wzchen@nju.edu.cn [The Key Laboratory of Modern Acoustics, Ministry of Education, Institution of Acoustics, Nanjing University, Nanjing 210093 (China); Wang, Xun; Yang, Jing; Chen, Zhan [The Key Laboratory of Modern Acoustics, Ministry of Education, Institution of Acoustics, Nanjing University, Nanjing 210093 (China)

2016-12-16

Highlights: • Time-resolved spectra of SBSL were obtained for Tb{sup 3+} ions emission lines. • Mass exchange between inside and outside of SL bubble was probed via Tb{sup 3+} ions lines. • The argon rectification hypothesis was tested by time-resolved spectra of SBSL. • The rate of mass exchange inside an SBSL bubble increases with increasing sound pressure. - Abstract: Spectra of single-bubble sonoluminescence (SBSL) were obtained for Tb{sup 3+} ions emission lines from bubbles in an aqueous solution of terbium chloride (TbCl{sub 3}). The spectra provide experimental evidence to prove that an air bubble driven by strong ultrasound will not eventually become a rectified pure argon bubble, which is not as predicted by the argon rectification hypothesis. The time-resolved spectra of SBSL show a mass exchange of material such as Tb{sup 3+} ions between the inside and outside of the bubble. With increasing sound pressure, the rate of mass exchange and the SBSL intensity increases.

High power single-frequency and frequency-doubled laser with active compensation for the thermal lens effect of terbium gallium garnet crystal.

Science.gov (United States)

Yin, Qiwei; Lu, Huadong; Su, Jing; Peng, Kunchi

2016-05-01

The thermal lens effect of terbium gallium garnet (TGG) crystal in a high power single-frequency laser severely limits the output power and the beam quality of the laser. By inserting a potassium dideuterium phosphate (DKDP) slice with negative thermo-optical coefficient into the laser resonator, the harmful influence of the thermal lens effect of the TGG crystal can be effectively mitigated. Using this method, the stable range of the laser is broadened, the bistability phenomenon of the laser during the process of changing the pump power is completely eliminated, the highest output power of an all-solid-state continuous-wave intracavity-frequency-doubling single-frequency laser at 532 nm is enhanced to 30.2 W, and the beam quality of the laser is significantly improved.

Effect of solvents on relation of intensities of bands of luminescence spectra of terbium and dysprosium ions in solutions of their complexes with acetoacetic ester

International Nuclear Information System (INIS)

Kononenko, L.I.; Bel'tyukova, S.V.; Meshkova, S.B.; Kravchenko, T.B.; Poluehktov, N.S.

1978-01-01

An investigation is made of the effect of different solvents on the ratio of the intensity of luminescence spectrum bands of terbium and dysprosium ions, corresponding and not corresponding to ''supersensitive'' transitions in complex compounds with acetoacetic ether. A dependence is established between these values and the dielectric constant of the solvent, and also parallels in their changes, which indicate the similar manifestation of the effect of solvents in both elements. A correlation is observed between ratios of the intensity of luminescence spectrum bands and values of forces of neodymium complex absorption band oscillators in different solvents

Synthesis and characterization of bright green terbium coordination complex derived from 1,4-bis(carbonylmethyl)terephthalate: Structure and luminescence properties

Science.gov (United States)

Ma, Mengjiao; Li, Congcong; Shu, Dengkun; Wang, Chaohua; Xi, Peng

2018-02-01

A photoluminescent terbium (Tb) complex involving a novel benzoic-acid compound with a unique coordinated structure, namely 1,4-bis(carbonylmethyl)terephthalate (BCMT), has been designed and synthesized. The new coordinate structure and energy-transfer mechanism between the ligand and Tb(III) ions were investigated in detail. The results demonstrated that the BCMT-Tb(III) complex shows strong fluorescence intensity (4 × 106 a.u.) and long fluorescence lifetime (1.302 ms), owing to the favorable degree of energy matching between the triplet excited level of the ligand and the resonant level of Tb(III) ions. Based on the analysis of three-dimensional luminescence spectra, the as-prepared Tb(III) complex can be effectively excited in the range of 250-310 nm, and it shows high color purity, with a bright green appearance.

High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

International Nuclear Information System (INIS)

Miah, M. Idrish

2008-01-01

High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained

High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong-4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-11-17

High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained.

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

Directory of Open Access Journals (Sweden)

Domenico Melisi

2014-11-01

Full Text Available In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed.

Selectivity control of photosensitive structures based on gallium arsenide phosphide solid solutions by changing the rate of surface recombination

International Nuclear Information System (INIS)

Tarasov, S A; Andreev, M Y; Lamkin, I A; Solomonov, A V

2016-01-01

In this paper, we demonstrate the effect of surface recombination on spectral sensitivity of structures based on gallium arsenide phosphide solid solutions. Simulation of the effect for structures based on a p-n junction and a Schottky barrier was carried out. Photodetectors with different rates of surface recombination were fabricated by using different methods of preliminary treatment of the semiconductor surface. We experimentally demonstrated the possibility to control photodetector selectivity by altering the rate of surface recombination. The full width at half maximum was reduced by almost 4 times, while a relatively small decrease in sensitivity at the maximum was observed. (paper)

Normal vibrations in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Dolling, G; Waugh, J L T

1964-07-01

The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296{sup o}K. The frequencies of normal modes of vibration propagating in the [{zeta}00], ({zeta}{zeta}{zeta}], and (0{zeta}{zeta}] crystal directions have been determined with a precision of between 1 and 2{center_dot}5 per cent. A limited number of normal modes have also been studied at 95 and 184{sup o}K. Considerable difficulty was experienced in obtaining welt resolved neutron peaks corresponding to the two non-degenerate optic modes for very small wave-vector, particularly at 296{sup o}K. However, from a comparison of results obtained under various experimental conditions at several different points in reciprocal space, frequencies (units 10{sup 12} c/s) for these modes (at 296{sup o}K) have been assigned: T 8{center_dot}02{+-}0{center_dot}08 and L 8{center_dot}55{+-}02. Other specific normal modes, with their measured frequencies are (a) (1,0,0): TO 7{center_dot}56 {+-} 008, TA 2{center_dot}36 {+-} 0{center_dot}015, LO 7{center_dot}22 {+-} 0{center_dot}15, LA 6{center_dot}80 {+-} 0{center_dot}06; (b) (0{center_dot}5, 0{center_dot}5, 0{center_dot}5): TO 7{center_dot}84 {+-} 0{center_dot}12, TA 1{center_dot}86 {+-} 0{center_dot}02, LO 7{center_dot}15 {+-} 0{center_dot}07, LA 6{center_dot}26 {+-} 0{center_dot}10; (c) (0, 0{center_dot}65, 0{center_dot}65): optic 8{center_dot}08 {+-}0{center_dot}13, 7{center_dot}54 {+-} 0{center_dot}12 and 6{center_dot}57 {+-} 0{center_dot}11, acoustic 5{center_dot}58 {+-} 0{center_dot}08, 3{center_dot}42 {center_dot} 0{center_dot}06 and 2{center_dot}36 {+-} 004. These results are generally slightly lower than the corresponding frequencies for germanium. An analysis in terms of various modifications of the dipole approximation model has been carried out. A feature of this analysis is that the charge on the gallium atom appears to be very small, about +0{center_dot}04 e. The

Commercializing potassium terbium fluoride, KTF (KTb3F10) faraday crystals for high laser power optical isolator applications

Science.gov (United States)

Schlichting, Wolfgang; Stevens, Kevin; Foundos, Greg; Payne, Alexis

2017-10-01

Many scientific lasers and increasingly industrial laser systems operate in manufacture. However, for high-power laser applications TGG is limited by its absorption at 1064nm and its thermo-optic coefficient, dn/dT. Specifically, thermal lensing and depolarization effects become a limiting factor at high laser powers. While TGG absorption has improved significantly over the past few years, there is an intrinsic limit. Now, SYNOPTICS is commercializing the enhanced new crystal Potassium Terbium Fluoride KTF (KTb3F10) that exhibits much smaller nonlinear refractive index and thermo-optic coefficients, and still exhibits a Verdet constant near that of TGG. This cubic crystal has relatively low absorption and thermo-optic coefficients. It is now fully characterized and available for select production orders. At OPTIFAB in October 2017 we present recent results comparing the performance of KTF to TGG in optical isolators and show SYNOPTICS advances in large volume crystal growth and the production ramp up.

The roles of the temperature on the structural and electronic properties of deep-level V{sub As}V{sub Ga} defects in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Ma, Deming, E-mail: xautmdm@163.com; Chen, Xi; Qiao, Hongbo; Shi, Wei; Li, Enling

2015-07-15

Highlights: • The energy gap of the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} is 0.82 eV. • Proves that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. • Proves that EL2 and EL6 deep-level defects can transform into each other. • Temperature has an important effect on the microstructure of deep-level defects. - Abstract: The roles of temperature on the structural and electronic properties of V{sub As}V{sub Ga} defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} can be converted from the V{sub As}V{sub Ga} complex clusters defect between 300 K and 1173 K; however, from 1173 K to 1373 K, the decomposition of the complex defect Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} occurs, turning into a deep-level V{sub As}V{sub Ga} cluster defect and an isolated As{sub Ga} antisite defect, and relevant defect of Ga{sub As} is recovered. The properties of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.

Modelling of the small pixel effect in gallium arsenide X-ray imaging detectors

CERN Document Server

Sellin, P J

1999-01-01

A Monte Carlo simulation has been carried out to investigate the small pixel effect in highly pixellated X-ray imaging detectors fabricated from semi-insulating gallium arsenide. The presence of highly non-uniform weighting fields in detectors with a small pixel geometry causes the majority of the induced signal to be generated when the moving charges are close to the pixellated contacts. The response of GaAs X-ray imaging detectors is further complicated by the presence of charge trapping, particularly of electrons. In this work detectors are modelled with a pixel pitch of 40 and 150 mu m, and with thicknesses of 300 and 500 mu m. Pulses induced in devices with 40 mu m pixels are due almost totally to the movement of the lightly-trapped holes and can exhibit significantly higher charge collection efficiencies than detectors with large electrodes, in which electron trapping is significant. Details of the charge collection efficiencies as a function of interaction depth in the detector and of the incident phot...

Molecular Orientation of a Terbium(III)-Phthalocyaninato Double-Decker Complex for Effective Suppression of Quantum Tunneling of the Magnetization.

Science.gov (United States)

Yamabayashi, Tsutomu; Katoh, Keiichi; Breedlove, Brian K; Yamashita, Masahiro

2017-06-15

Single-molecule magnet (SMM) properties of crystals of a terbium(III)-phthalocyaninato double-decker complex with different molecular packings ( 1 : TbPc₂, 2 : TbPc₂·CH₂Cl₂) were studied to elucidate the relationship between the molecular packing and SMM properties. From single crystal X-ray analyses, the high symmetry of the coordination environment of 2 suggested that the SMM properties were improved. Furthermore, the shorter intermolecular Tb-Tb distance and relative collinear alignment of the magnetic dipole in 2 indicated that the magnetic dipole-dipole interactions were stronger than those in 1 . This was confirmed by using direct current magnetic measurements. From alternating current magnetic measurements, the activation energy for spin reversal for 1 and 2 were similar. However, the relaxation time for 2 is three orders of magnitude slower than that for 1 in the low- T region due to effective suppression of the quantum tunneling of the magnetization. These results suggest that the SMM properties of TbPc₂ highly depend on the molecular packing.

Study of current instabilities in high resistivity gallium arsenide; Etude des instabilites de courant dans l'arseniure de gallium de haute resistivite

Energy Technology Data Exchange (ETDEWEB)

Barraud, A [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1968-07-01

We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [French] Nous avons mis en evidence et etudie des oscillations de courant qui se produisent a champ electrique eleve dans l'arseniure de

Studies of binary cerium(IV)-praseodymium(IV) and cerium(IV)-terbium(IV) oxides as pigments for ceramic applications

International Nuclear Information System (INIS)

Furtado, L.M.L.

1991-01-01

It was investigated a series of pigments of general composition Ce 1-x Pr x O 2 , and Ce x Tb y O 2 , exhibiting radish and brown colors, respectively, and high temperature stability. The pigments were obtained by dissolving appropriate amounts of the pure lanthanide oxides in acids and precipitating the rare earths as mixed oxalates, which were isolated and calcined under air, at 1000 0 C. X-Ray powder diffractograms were consistent with a cubic structure for the pigments. Magnetic susceptibility measurements, using Gouy method, indicated the presence of Pr(IV) ions in the Ce 1-x Pr x O 2 pigments and of Terbium predominantly as Tb(III) ions in the Ce-tb mixed oxides. A new method, based on suspension of solid samples in PVA-STB gels (STB = sodium tetradecaborate), was employed for the measurements of the electronic spectra of the pigments. The thermal behaviour the pigments was investigated by the calcination of the oxalates in the temperature range of 500 to 1200 O C, from 10 to 60 minutes. (author)

Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

Science.gov (United States)

Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

2016-01-01

CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approximately 576-867 degrees Centigrade. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Me-tallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120-degree triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3 plus, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

Science.gov (United States)

Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

2018-04-12

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure

Energy Technology Data Exchange (ETDEWEB)

Kim, Jaehyun; Sellan, Daniel P.; Ou, Eric; Shi, Li, E-mail: lishi@mail.utexas.edu [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Evans, Daniel A.; Williams, Owen M.; Cowley, Alan H. [Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712 (United States)

2016-05-16

Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250 K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phonon scattering. The room temperature value of (186 ± 46) W m{sup −1 }K{sup −1} is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. The foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achieve the predicted ultrahigh intrinsic lattice thermal conductivity of BAs.

Study for the determination of samarium, europium,terbium, dysprosium and yttrium in gadolinium oxide matrix by means of atomic absorption spectrophotometry using a graphite furnace

International Nuclear Information System (INIS)

Caires, A.C.F.

1985-01-01

A study for determination of samarium, europium, terbium, dysprosium and yttrium in a gadolinium oxide matrix by atomic absorption spectrophotometry using a graphite furnace is presented. The best charrring and atomization conditions were estabilished for each element, the most convenient ressonance lines being selected as well. The study was carried out for the mentioned lanthanides both when pure and when in binary mixtures with gadolinium, besides those where all for them were together with gadolinium. The determination limits for pure lanthanides were found to be between 1.3 and 9.6 ng assuming a 20% relative standard deviation as acceptable. The detection limits were in the range 0.51 and 7.5 ng, assuming as positive any answer higher than twofold the standard deviation. (author) [pt

Sparkle/PM3 for the modeling of europium(III), gadolinium(III), and terbium(III) complexes

International Nuclear Information System (INIS)

Freire, Ricardo O.; Rocha, Gerd B.; Simas, Alfredo M.

2009-01-01

The Sparkle/PM3 model is extended to europium(III), gadolinium(III), and terbium(III) complexes. The validation procedure was carried out using only high quality crystallographic structures, for a total of ninety-six Eu(III) complexes, seventy Gd(III) complexes, and forty-two Tb(III) complexes. The Sparkle/PM3 unsigned mean error, for all interatomic distances between the trivalent lanthanide ion and the ligand atoms of the first sphere of coordination, is: 0.080 A for Eu(III); 0.063 A for Gd(III); and 0.070 A for Tb(III). These figures are similar to the Sparkle/AM1 ones of 0.082 A, 0.061 A, and 0.068 A respectively, indicating they are all comparable parameterizations. Moreover, their accuracy is similar to what can be obtained by present-day ab initio effective core potential full geometry optimization calculations on such lanthanide complexes. Finally, we report a preliminary attempt to show that Sparkle/PM3 geometry predictions are reliable. For one of the Eu(III) complexes, BAFZEO, we created hundreds of different input geometries by randomly varying the distances and angles of the ligands to the central Eu(III) ion, which were all subsequently fully optimized. A significant trend was unveiled, indicating that more accurate local minima geometries cluster at lower total energies, thus reinforcing the validity of sparkle model calculations. (author)

VUV and UV–vis optical study on KGd2F7 luminescent host doped with terbium and co-doped with europium

International Nuclear Information System (INIS)

Lisiecki, Radosław

2013-01-01

The KGd 2 F 7 :Tb and KGd 2 F 7 :Tb,Eu samples were obtained using a solid state reaction. Excitation spectra and emission spectra are reported and analyzed within the VUV–UV–vis spectral range. The intense green luminescence is observed in the KGd 2 F 7 :Tb while the combined emission of terbium and europium in the KGd 2 F 7 :Tb,Eu covers substantially the region of white light. The materials under study can be effectively excited making use of intense f–d transitions of Tb 3+ in the VUV–UV region. Experimental lifetimes of luminescent levels have been measured and discussed. It was found that the considerable energy transfer from Tb 3+ to Eu 3+ occurs. -- Highlights: • The prospective green and white emitting phosphors. • The effective VUV and UV–vis excitation process. • The considerable energy transfer among optically active ions. • The influence of (Tb, Eu) co-doping on relaxation dynamic of excited states

A new luminescent terbium 4-methylsalicylate complex as a novel sensor for detecting the purity of methanol.

Science.gov (United States)

Zeng, Cheng-Hui; Yang, Yang-Yi; Zhu, Yi-Min; Wang, Hong-Ming; Chu, Tian-Shu; Ng, Seik Weng

2012-01-01

A new dinuclear terbium complex [Tb(2)(4-msal)(6)(H(2)O)(4)]·6H(2)O (1) (4-msal = 4-methylsalcylate) was synthesized. Its structure was determined by single crystal X-ray diffraction, and the complex was characterized by PXRD, FT-IR, fluorescence, TGA and DTA. Complex 1 exists as discrete molecules that are linked by extensive O-H … O hydrogen bonds into a 3D network. The luminescence lifetimes of 3 μM methanol solution and solid sample of 1 are 1.321 and 1.009 ms, respectively. The quantum yield of solid sample is 6.0%. The luminescence quenched more than 50% when 3% (vol/vol) different impurities (acetone, acetonitrile, chloroform, dichloromethane, dioxane, DMF, DMSO, ethanol, ether, ethyl acetate, glycol, H(2)O, hexane, TEA, THF and toluene or their mixture) were added. The inverse linear relationship between the Lg value of fluorescence intensity and the volume ratio of the minor component (to a maximum of 20%) is interpreted in terms of LgI = a-bX (I: luminescence intensity; X: volume ratio of impurities in methanol; a, b are constants). So 1 is a potential luminescent sensor for analyzing the purity of methanol. © 2012 Wiley Periodicals, Inc. Photochemistry and Photobiology © 2012 The American Society of Photobiology.

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Gallium interstitial contributions to diffusion in gallium arsenide

Science.gov (United States)

Schick, Joseph T.; Morgan, Caroline G.

2011-09-01

encountered in fitting experimental results for heavily p-type, Ga-rich gallium arsenide by simply extending a model for gallium interstitial diffusion which has been used for less p-doped material.

Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

Energy Technology Data Exchange (ETDEWEB)

Kretzer, Ulrich

2007-12-10

In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

International Nuclear Information System (INIS)

Wampler, William R.; Myers, Samuel M.

2015-01-01

A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers, and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation

Continuum modelling of silicon diffusion in indium gallium arsenide

Science.gov (United States)

Aldridge, Henry Lee, Jr.

A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point

Development and Validation of A Spectrofluorimetric Determination of Calf Thymus DNA Using a Terbium-Danofloxacin Probe

Directory of Open Access Journals (Sweden)

Naser Soltani

2016-03-01

Full Text Available Background: Analysis of biomolecules is required in many biomedical research areas. A spectrofluorimetric method is proposed for determination of calf thymus DNA (ctDNA based on the fluorescence enhancement of terbium-danofloxacin (Tb3+-Dano in the presence of ctDNA. Methods: A probe with maximum excitation and emission wavelengths of 347 nm and 545 nm, respectively, was developed. The enhanced fluorescence intensity of Tb3+-Dano system was proportional to the concentration of ctDNA. The effective factors and the optimum conditions for the determination of ctDNA were studied. Under the optimum conditions of [Tris buffer]= 0.01 mol L-1 (pH 7.8, [ Tb3+]= 1×10-5 mol L-1 and [Dano]= 5×10-5 mol L-1, the maximum response was achieved. The developed method was evaluated in terms of accuracy, precision and limit of detection. Results: The linear concentration range for quantification of ctDNA was 36-3289 ng mL-1 and the detection limit (S/N=3 was 8 ng mL-1. The concentration of DNA extracted from Escherichia coli as an extracted sample was also determined using the developed probe. The concentration of DNA in extracted sample was determined using UV assay and developed method, the results were satisfactory. Conclusion: The proposed method is a simple, practical and relatively interference free method to follow up the concentrations of ctDNA.

Investigation of concentration-dependence of thermodynamic properties of lanthanum, yttrium, scandium and terbium in eutectic LiCl-KCl molten salt

Energy Technology Data Exchange (ETDEWEB)

Wang, Yafei; Zhou, Wentao; Zhang, Jinsuo, E-mail: zhang.3558@osu.edu

2016-09-15

Thermodynamic properties of rare earth metals in LiCl-KCl molten salt electrolyte are crucial to the development of electrochemical separation for the treatment of used nuclear fuels. In the present study, activity coefficient, apparent potential, and diffusion coefficient of lanthanum, yttrium, scandium, and terbium in the molten salt (58 at% LiCl and 42 at% KCl) were calculated by the method of molecular dynamics simulation up to a concentration around 3 at% at temperatures of 723 K and 773 K. It was found that the activity coefficient and the apparent potential increase with the species concentration while diffusion coefficient shows a trend of increase followed by decrease. The calculated results were validated by available measurement data of dilution cases. This research extends the range of data to a wide component and would provide further insight to the pyroprocessing design and safeguards. - Highlights: • Investigation of activity coefficient, apparent potential and diffusion coefficient at different concentrations. • MD simulation was studied for the calculation of thermodynamic properties of rare earth elements in molten salt. • The present study is a pioneering work focusing on the concentration dependence of thermodynamic properties.

Determination of terbium in phosphate rock by Tb{sup 3+}-selective fluorimetric optode based on dansyl derivative as a neutral fluorogenic ionophore

Energy Technology Data Exchange (ETDEWEB)

Hosseini, Morteza, E-mail: smhosseini@khayam.ut.ac.ir [Department of Chemistry, Islamic Azad University, Savadkooh Branch, Savadkooh (Iran, Islamic Republic of); Ganjali, Mohammad Reza [Center of Excellence in Electrochemistry, Faculty of Chemistry, University of Tehran, Tehran (Iran, Islamic Republic of); Endocrinology and Metabolism Research Center, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of); Veismohammadi, Bahareh [Center of Excellence in Electrochemistry, Faculty of Chemistry, University of Tehran, Tehran (Iran, Islamic Republic of); Faridbod, Farnoush [Endocrinology and Metabolism Research Center, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of); Abkenar, Shiva Dehghan [Department of Chemistry, Islamic Azad University, Savadkooh Branch, Savadkooh (Iran, Islamic Republic of); Norouzi, Parviz [Endocrinology and Metabolism Research Center, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of); Center of Excellence in Electrochemistry, Faculty of Chemistry, University of Tehran, Tehran (Iran, Islamic Republic of)

2010-04-07

For the first time a highly sensitive and selective fluorimetric optode membrane was prepared for determination of trace amounts of Tb(III) ions in phosphate rock samples. The Tb(III) sensing system was constructed by incorporating 5-(dimethylamino)-N'-(2-hydroxy-1-naphthoyl) naphthalene-1-sulfonohydrazine (L) as a neutral Tb(III)-selective fluoroionophore, in the plasticized PVC membrane containing sodium tetraphenyl borate as a liphophilic anionic additive. The response of the optode is based on the strong fluorescence quenching of L by Tb{sup 3+} ions. At a pH value of 5.0, the optode displays a wide concentration range of 1.0 x 10{sup -7} to 1.0 x 10{sup -2} M, with a relatively fast response time of less than 45 s. In addition, to high stability and reproducibility, the sensor shows a unique selectivity towards Tb{sup 3+} ion with respect to common cations. The optode was applied successfully to the trace determination of terbium ion in binary mixture and water samples and the determination of Tb{sup 3+} in phosphate rock samples.

The effect of hydrostatic pressure on the physical properties of magnesium arsenide in cubic and hexagonal phases

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, Ali, E-mail: mokhtari@sci.sku.ac.i [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, P. B. 115, Shahrekord (Iran, Islamic Republic of); Sedighi, Matin [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, P. B. 115, Shahrekord (Iran, Islamic Republic of)

2010-04-01

Full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) was applied to study the structural and electronic properties of the magnesium arsenide in both cubic and hexagonal phases. The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). The lattice parameters, bulk modulus and its pressure derivative, cohesive energy, band structures and effective mass of electrons and holes (EME and EMH) were obtained and compared to the available experimental and theoretical results. A phase transition was predicted at pressure of about 1.63 GPa from the cubic to the hexagonal phase. The effect of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths, anti-symmetry gap (the energy gap between two parts of the valence bands), EME and EMH were investigated using both GGA96 and EV-GGA methods. High applied pressure can decrease (increase) the holes mobility of cubic (hexagonal) phase of this compound.

The effect of hydrostatic pressure on the physical properties of magnesium arsenide in cubic and hexagonal phases

International Nuclear Information System (INIS)

Mokhtari, Ali; Sedighi, Matin

2010-01-01

Full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) was applied to study the structural and electronic properties of the magnesium arsenide in both cubic and hexagonal phases. The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). The lattice parameters, bulk modulus and its pressure derivative, cohesive energy, band structures and effective mass of electrons and holes (EME and EMH) were obtained and compared to the available experimental and theoretical results. A phase transition was predicted at pressure of about 1.63 GPa from the cubic to the hexagonal phase. The effect of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths, anti-symmetry gap (the energy gap between two parts of the valence bands), EME and EMH were investigated using both GGA96 and EV-GGA methods. High applied pressure can decrease (increase) the holes mobility of cubic (hexagonal) phase of this compound.

A study of ion implanted gallium arsenide using deep level transient spectroscopy

International Nuclear Information System (INIS)

Emerson, N.G.

1981-03-01

This thesis is concerned with the study of deep energy levels in ion implanted gallium arsenide (GaAs) using deep level transient spectroscopy (D.L.T.S.). The D.L.T.S. technique is used to characterise deep levels in terms of their activation energies and capture cross-sections and to determine their concentration profiles. The main objective is to characterise the effects on deep levels, of ion implantation and the related annealing processes. In the majority of cases assessment is carried out using Schottky barrier diodes. Low doses of selenium ions 1 to 3 x 10 12 cm -2 are implanted into vapour phase epitaxial (V.P.E.) GaAs and the effects of post-implantation thermal and pulsed laser annealing are compared. The process of oxygen implantation with doses in the range 1 x 10 12 to 5 x 10 13 cm -2 followed by thermal annealing at about 750 deg C, introduces a deep level at 0.79 eV from the conduction band. Oxygen implantation, at doses of 5 x 10 13 cm -2 , into V.P.E. GaAs produces a significant increase in the concentration of the A-centre (0.83 eV). High doses of zinc (10 15 cm -2 ) are implanted into n-type V.P.E. GaAs to form shallow p-type layers. The D.L.T.S. system described in the text is used to measure levels in the range 0.16 to 1.1 eV (for GaAs) with a sensitivity of the order 1:10 3 . (U.K.)

Terbium to Quantum Dot FRET Bioconjugates for Clinical Diagnostics: Influence of Human Plasma on Optical and Assembly Properties

Directory of Open Access Journals (Sweden)

Niko Hildebrandt

2011-10-01

Full Text Available Förster resonance energy transfer (FRET from luminescent terbium complexes (LTC as donors to semiconductor quantum dots (QDs as acceptors allows extraordinary large FRET efficiencies due to the long Förster distances afforded. Moreover, time-gated detection permits an efficient suppression of autofluorescent background leading to sub-picomolar detection limits even within multiplexed detection formats. These characteristics make FRET-systems with LTC and QDs excellent candidates for clinical diagnostics. So far, such proofs of principle for highly sensitive multiplexed biosensing have only been performed under optimized buffer conditions and interactions between real-life clinical media such as human serum or plasma and LTC-QD-FRET-systems have not yet been taken into account. Here we present an extensive spectroscopic analysis of absorption, excitation and emission spectra along with the luminescence decay times of both the single components as well as the assembled FRET-systems in TRIS-buffer, TRIS-buffer with 2% bovine serum albumin, and fresh human plasma. Moreover, we evaluated homogeneous LTC-QD FRET assays in QD conjugates assembled with either the well-known, specific biotin-streptavidin biological interaction or, alternatively, the metal-affinity coordination of histidine to zinc. In the case of conjugates assembled with biotin-streptavidin no significant interference with the optical and binding properties occurs whereas the histidine-zinc system appears to be affected by human plasma.

The quaternary arsenide oxides Ce{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} and Pr{sub 9}Au{sub 5-x}As{sub 8}O{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Bartsch, Timo; Hoffmann, Rolf-Dieter; Poettgen, Rainer [Univ. Muenster (Germany). Inst. fuer Anorganische und Analytische Chemie

2016-07-01

The quaternary gold arsenide oxides Ce{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} and Pr{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} were synthesized from the rare earth elements (RE), rare earth oxides, arsenic and gold powder at maximum annealing temperatures of 1173 K. The structures were refined from single crystal X-ray diffractometer data: Pnnm, a=1321.64(6) pm, b=4073.0(3), c=423.96(2), wR2=0.0842, 3106 F{sup 2} values, 160 variables for Ce{sub 9}Au{sub 4.91(4)}As{sub 8}O{sub 6} and Pnnm, a=1315.01(4), b=4052.87(8), c=420.68(1) pm, wR2=0.0865, 5313 F{sup 2} values, 160 variables for Pr{sub 9}Au{sub 4.75(1)}As{sub 8}O{sub 6}. They represent a new structure type and show a further extension of pnictide oxide crystal chemistry. A complex polyanionic gold arsenide network [Au{sub 5}As{sub 8}]{sup 15-} (with some disorder in the gold substructure) is charge compensated with polycationic strands of condensed edge-sharing O rate at RE{sub 4/4} and O rate at RE{sub 4/3} tetrahedra ([RE{sub 4}O{sub 3}]{sub 2}{sup 12+}) as well as RE{sup 3+} cations in cavities.

Determination of terbium in phosphate rock by Tb3+-selective fluorimetric optode based on dansyl derivative as a neutral fluorogenic ionophore.

Science.gov (United States)

Hosseini, Morteza; Ganjali, Mohammad Reza; Veismohammadi, Bahareh; Faridbod, Farnoush; Abkenar, Shiva Dehghan; Norouzi, Parviz

2010-04-07

For the first time a highly sensitive and selective fluorimetric optode membrane was prepared for determination of trace amounts of Tb(III) ions in phosphate rock samples. The Tb(III) sensing system was constructed by incorporating 5-(dimethylamino)-N'-(2-hydroxy-1-naphthoyl) naphthalene-1-sulfonohydrazine (L) as a neutral Tb(III)-selective fluoroionophore, in the plasticized PVC membrane containing sodium tetraphenyl borate as a liphophilic anionic additive. The response of the optode is based on the strong fluorescence quenching of L by Tb(3+) ions. At a pH value of 5.0, the optode displays a wide concentration range of 1.0 x 10(-7) to 1.0 x 10(-2)M, with a relatively fast response time of less than 45 s. In addition, to high stability and reproducibility, the sensor shows a unique selectivity towards Tb(3+) ion with respect to common cations. The optode was applied successfully to the trace determination of terbium ion in binary mixture and water samples and the determination of Tb(3+) in phosphate rock samples. Crown Copyright 2010. Published by Elsevier B.V. All rights reserved.

Preparation of transparent sol-gel films containing europium, terbium, and ytterbium cations from 4-(3'-triethoxysilylpropylimino)pent-2-en-2-ol

International Nuclear Information System (INIS)

Semenov, V.V.; Cherepennikova, N.F.; Kuznetsova, O.V.; Melenskova, N.V.; Bushuk, B.A.; Bushuk, S.B.; Kal'vinkovskaya, Yu.A.; Duglas, V.E.

2007-01-01

A reaction of 3-aminopropyl(triethoxy)silane with acetylacetone gave a mixture of two isomeric carbon-functionalized organosilicon compounds capable of complexation and sol-gel polymerization. These were 4-(3'-triethoxysilylpropylimino)pent-2-en-2-ol (EtO) 3 Si-CH 2 CH 2 CH 2 -N=C(Me)CH=C(Me)OH (Ia, 83%) and 4-(3'-triethoxysilylpropylamino)pent-3-en-2-one (EtO) 3 Si-CH 2 CH 2 CH 2 -NH-C(Me)=CH-C(O)Me (Ib, 17%). With acetylacetone trimethylsilyl ether instead of acetylacetone itself, compound Ia and silylated derivatives (Me 3 SiO) n (EtO) 3-n Si-CH 2 CH 2 CH 2 -N=C(Me)CH=C(Me)OH were obtained as admixture in 84 and 16% yields, respectively. Reactions of ligands Ia and Ib with europium and terbium propan-2-olates afforded the corresponding complexes. Formulations of lanthanide complexes, oligodimethylsiloxanediols, and 3-aminopropyl(triethoxy)silane were used to prepare transparent sol-gel films. The photoluminescence spectra of the films show narrow bands due to Eu 3+ or Tb 3+ emission. Emission from the organosilicon matrix appears as a broad band at 430 to 435 nm [ru

Application of low-cost Gallium Arsenide light-emitting-diodes as kerma dosemeter and fluence monitor for high-energy neutrons

International Nuclear Information System (INIS)

Mukherjee, B.; Simrock, S.; Khachan, J.; Rybka, D.; Romaniuk, R.

2007-01-01

Displacement damage (DD) caused by fast neutrons in unbiased Gallium Arsenide (GaAs) light emitting diodes (LED) resulted in a reduction of the light output. On the other hand, a similar type of LED irradiated with gamma rays from a 60 Co source up to a dose level in excess of 1.0 kGy (1.0 x 10 5 rad) was found to show no significant drop of the light emission. This phenomenon was used to develop a low cost passive fluence monitor and kinetic energy released per unit mass dosemeter for accelerator-produced neutrons. These LED-dosemeters were used to assess the integrated fluence of photoneutrons, which were contaminated with a strong Bremsstrahlung gamma-background generated by the 730 MeV superconducting electron linac driving the free electron laser in Hamburg (FLASH) at Deutsches Elektronen-Synchrotron. The applications of GaAs LED as a routine neutron fluence monitor and DD precursor for the electronic components located in high-energy accelerator environment are highlighted. (authors)

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Science.gov (United States)

Anspaugh, B. E.; Downing, R. G.

1984-01-01

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Inner-sphere and outer-sphere complexes of yttrium(III), lanthanum (III), neodymium(III), terbium(III) and thulium(III) with halide ions in N,N-dimethylformamide

International Nuclear Information System (INIS)

Takahashi, Ryouta; Ishiguro, Shin-ichi

1991-01-01

The formation of chloro, bromo and iodo complexes of yttrium(III), and bromo and iodo complexes of lanthanum(III), neodymium(III), terbium(III) and thulium(III) has been studied by precise titration calorimetry in N,N-dimethylformamide (DMF) at 25 o C. The formation of [YCl] 2+ , [YCl 2 ] + , [YCl 3 ] and [YCl 4 ] - , and [MBr] 2+ and [MBr 2 ] + (M = Y, La, Nd, Tb, Tm) was revealed, and their formation constants, enthalpies and entropies were determined. It is found that the formation enthalpies change in the sequence ΔH o (Cl) > ΔH o (l), which is unusual for hard metal (III) ions. This implies that, unlike the chloride ion, the bromide ion forms outer-sphere complexes with the lanthanide(III) and yttrium(III) ions in DMF. Evidence for either an inner- or outer-sphere complex was obtained from 89 Y NMR spectra for Y(ClO 4 ) 3 , YCl 3 and YBr 3 DMF solutions at room temperature. (author)

A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

CERN Document Server

Vernon, S M

1999-01-01

This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

Study of quantum dot based on tin/yttrium mixed oxide doped with terbium to be used as biomarker

International Nuclear Information System (INIS)

Paganini, Paula P.; Felinto, Maria Claudia F.C.; Kodaira, Claudia A.; Brito, Hermi F.; Nunes, Luiz Antonio O.

2009-01-01

Quantum dots (semiconductors nanocrystals) have brought a promising field to develop a new generation of luminescent biomarkers. The use of lanthanides ions as luminescent markers has many advantages, for example a security method, low cost, high specificity and also the luminescence can be promptly measured with high sensibility and accuracy. These luminescent dots are functionalized with biomolecules. For the luminophore particle to be connect with biologicals molecules (for example covalent antibody) is necessary a previous chemical treatment to modify luminophore particle surface and this process is called functionalization. A prior chemical treatment with changes on the surface luminophore particle is necessary to couple the luminophore to biological molecules. This process can be used as coating which can protect these particles from being dissolved by acid as well as provide functional groups for biological conjugation. This work presents a photoluminescence study of nanoparticles based on tin/yttrium mixed oxides doped with terbium (SnO 2 /Y 2 O 3 :Tb 3+ ), synthesized by coprecipitation method. The nanoparticles were submitted to thermal treatment and characterized by X-Ray Powder Diffraction (XRD) that showed cassiterite phase formation and the influence of thermal treatment on nanoparticles structures. These nanoparticles going to be functionalized with a natural polysaccharide (chitosan) in order to form microspheres. These microspheres going to be irradiated with gamma radiation to sterilization and it can be evaluated if the nanoparticles are resistant to irradiation and they do not lose functionality with this process. (author)

Arsenic moiety in gallium arsenide is responsible for neuronal apoptosis and behavioral alterations in rats

International Nuclear Information System (INIS)

Flora, Swaran J.S.; Bhatt, Kapil; Mehta, Ashish

2009-01-01

Gallium arsenide (GaAs), an intermetallic semiconductor finds widespread applications in high frequency microwave and millimeter wave, and ultra fast supercomputers. Extensive use of GaAs has led to increased exposure to humans working in semiconductor industry. GaAs has the ability to dissociate into its constitutive moieties at physiological pH and might be responsible for the oxidative stress. The present study was aimed at evaluating, the principle moiety (Ga or As) in GaAs to cause neurological dysfunction based on its ability to cause apoptosis, in vivo and in vitro and if this neuronal dysfunction translated to neurobehavioral changes in chronically exposed rats. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased reactive oxygen species (ROS) and nitric oxide (NO) generation, both in vitro and in vivo. Increased ROS further caused apoptosis via mitochondrial driven pathway. Effects of oxidative stress were also confirmed based on alterations in antioxidant enzymes, GPx, GST and SOD in rat brain. We noted that ROS induced oxidative stress caused changes in the brain neurotransmitter levels, Acetylcholinesterase and nitric oxide synthase, leading to loss of memory and learning in rats. The study demonstrates for the first time that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress induced apoptosis in neuronal cells causing behavioral changes.

Preparation of a novel fluorescence probe of terbium-europium co-luminescence composite nanoparticles and its application in the determination of proteins

Energy Technology Data Exchange (ETDEWEB)

Gao Feng [College of Chemistry and Materials Science, Anhui Key Laboratory of Chemo/Biosensing, Anhui Normal University, Wuhu 241000 (China)], E-mail: summit8848cn@hotmail.com; Luo Fabao; Tang Lijuan; Dai Lu [College of Chemistry and Materials Science, Anhui Key Laboratory of Chemo/Biosensing, Anhui Normal University, Wuhu 241000 (China); Wang Lun [College of Chemistry and Materials Science, Anhui Key Laboratory of Chemo/Biosensing, Anhui Normal University, Wuhu 241000 (China)], E-mail: wanglun@mail.ahnu.edu.cn

2008-03-15

Terbium-europium Tb-Eu/acetylacetone(acac)/poly(acrylamide) (PAM) co-luminescence composite nanoparticles were successfully prepared using the ultrasonic approach. The as-prepared composite nanoparticles show the characteristic emission spectra of Tb{sup 3+}, located at 496 and 549 nm. Furthermore, the nanoparticles are water soluble, stable and have extremely narrow emission bands and high internal fluorescence quantum yield due to the co-luminescence effect. Further studies indicate that proteins can interact with the nanoparticles and induce the fluorescence quenching of the nanoparticles. Based on the fluorescence quenching of nanopaticles in the presence of proteins, a novel method for the sensitive determination of trace amounts of proteins was proposed. Under the optimal experimental conditions, the linear ranges of calibration curves are 0-3.5 {mu}g mL{sup -1} for human serum albumin (HSA) and 0-4.0 {mu}g mL{sup -1} for {gamma}-globulin ({gamma}-IgG), respectively. The limits of detection are 7.1 for HSA and 6.7ng mL{sup -1} for {gamma}-IgG, respectively. The method was applied to the quantification of proteins in synthetic samples and actual human serum samples with satisfactory results. This proposed method is sensitive, simple and has potential application in the clinical assay of proteins.

Studies on the rare earth complexes with pyridine derivatives and their N-oxide(II) - Synthesis and properties of fluorescent solid complexes of samarium, europium, gadolium and terbium chlorides with 2,2'-bipyridine-N,N'-dioxide

International Nuclear Information System (INIS)

Minyu, T.; Ning, T.; Yingli, Z.; Jiyuan, B.

1985-01-01

The solid complexes of rare earth nitrates perchlorates and thiocyanates with 2,2'-bipyridine-N,N'-dioxide (bipyO/sub 2/) have been reported. However, the corresponding complexes of other rear earth chlorides have not been investigated except lanthanum, cerium and yttrium. As an extension of our previous work on the synthesis of complexes of praseodymium and neodymium chlorides wiht bipoyO/sub 2/, the authors have now prepared fluorescent solid complexes of samarium, europium, gadolium and terbium chlorides with biphyO/sub 2/, using methanol as a reaction medium. The new synthesized compounds have been identified by means of elemental analysis, infrared spectrometry, conductometry, differential thermal analysis (DTA), thermogravimetry (TG) and X-ray powder diffraction

Platinum-group elements fractionation by selective complexing, the Os, Ir, Ru, Rh-arsenide-sulfide systems above 1020 °C

Science.gov (United States)

Helmy, Hassan M.; Bragagni, Alessandro

2017-11-01

The platinum-group element (PGE) contents in magmatic ores and rocks are normally in the low μg/g (even in the ng/g) level, yet they form discrete platinum-group mineral (PGM) phases. IPGE (Os, Ir, Ru) + Rh form alloys, sulfides, and sulfarsenides while Pt and Pd form arsenides, tellurides, bismuthoids and antimonides. We experimentally investigate the behavior of Os, Ru, Ir and Rh in As-bearing sulfide system between 1300 and 1020 °C and show that the prominent mineralogical difference between IPGE (+Rh) and Pt and Pd reflects different chemical preference in the sulfide melt. At temperatures above 1200 °C, Os shows a tendency to form alloys. Ruthenium forms a sulfide (laurite RuS2) while Ir and Rh form sulfarsenides (irarsite IrAsS and hollingworthite RhAsS, respectively). The chemical preference of PGE is selective: IPGE + Rh form metal-metal, metal-S and metal-AsS complexes while Pt and Pd form semimetal complexes. Selective complexing followed by mechanical separation of IPGE (and Rh)-ligand from Pt- and Pd-ligand associations lead to PGE fractionation.

Study of the role of complete fusion in the reaction of 48Ca and 56Fe with cerium and terbium

International Nuclear Information System (INIS)

Morrissey, D.J.

1978-05-01

48 Ca and 56 Fe beams from the Super HILAC accelerator were used to irradiate thick metal foils of cerium and terbium. Product gamma ray activities were detected offline and individual products were identified by half-life, gamma ray energy and gamma ray abundances. The production cross sections were iteratively fit to charge and mass dispersions to allow correction for parent decay and calculation of mass yields. From the mass yield curves contributions from quasielastic transfer, deep inelastic transfer and complete fusion reaction mechanisms were interred. Complete fusion was made up on contributions from both evaporation residue and fusion-fission products for the 48 Ca induced reactions. However, only fusion-fission products were detected in the 56 Fe induced reactions. Critical angular momenta for fusion were found to be 82 +- 8 h for 48 Ca + 159 Tb and 34 +- 5 h for 56 Fe + 140 Ce, which can be compared with 53 +- 8 h for 12 C + 197 Au (Natowitz, 1970) and 86 +- 5 h for 40 Ar + 165 Ho (Hanappe, 1973). All of these reactions lead to essentially the same compound nucleus and seem to show the dramatic decline in complete fusion for heavy ions larger than 40 Ar. The prediction of this decline was found to be beyond the model calculations of Bass and the critical distance approach of Glas and Mosel

Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

International Nuclear Information System (INIS)

Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

2014-01-01

Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

The purification of the rare earth metals. II

International Nuclear Information System (INIS)

Jordan, R.G.; Jones, D.W.; Hems, V.J.

1975-01-01

Solid-state electrotransport processing has been demonstrated as a technique for purifying terbium. The results show that both oxygen and nitrogen migrate rapidly in the same direction as the electron flow. Although hydrogen contamination occurs on contact with air, terbium of better than 99.9 at. % has been prepared from commercially available starting material. The preparation and characterisation of high-quality single-crystal terbium specimens is also described. (Auth.)

Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

KAUST Repository

Anua, N. Najwa

2013-08-20

Exchange correlation (XC) energy functionals play a vital role in the efficiency of density functional theory (DFT) calculations, more soundly in the calculation of fundamental electronic energy bandgap. In the present DFT study of III-arsenides, we investigate the implications of XC-energy functional and corresponding potential on the structural, electronic and optical properties of XAs (X = B, Al, Ga, In). Firstly we report and discuss the optimized structural lattice parameters and the band gap calculations performed within different non-local XC functionals as implemented in the DFT-packages: WIEN2k, CASTEP and SIESTA. These packages are representative of the available code in ab initio studies. We employed the LDA, GGA-PBE, GGA-WC and mBJ-LDA using WIEN2k. In CASTEP, we employed the hybrid functional, sX-LDA. Furthermore LDA, GGA-PBE and meta-GGA were employed using SIESTA code. Our results point to GGA-WC as a more appropriate approximation for the calculations of structural parameters. However our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice agreement with the experimental measurements in addition to other theoretical results. © 2013 IOP Publishing Ltd.

Nematic fluctuations in iron arsenides NaFeAs and LiFeAs probed by 75As NMR

Science.gov (United States)

Toyoda, Masayuki; Kobayashi, Yoshiaki; Itoh, Masayuki

2018-03-01

75As NMR measurements have been made on single crystals to study the nematic state in the iron arsenides NaFeAs, which undergoes a structural transition from a high-temperature (high-T ) tetragonal phase to a low-T orthorhombic phase at Ts=57 K and an antiferromagnetic transition at TN=42 K, and LiFeAs having a superconducting transition at Tc=18 K. We observe the in-plane anisotropy of the electric field gradient η even in the tetragonal phase of NaFeAs and LiFeAs, showing the local breaking of tetragonal C4 symmetry. Then, η is found to obey the Curie-Weiss (CW) law as well as in Ba (Fe1-xCox) 2As2 . The good agreement between η and the nematic susceptibility obtained by electronic Raman spectroscopy indicates that η is governed by the nematic susceptibility. From comparing η in NaFeAs and LiFeAs with η in Ba (Fe1-xCox) 2As2 , we discuss the carrier-doping dependence of the nematic susceptibility. The spin contribution to nematic susceptibility is also discussed from comparing the CW terms in η with the nuclear spin-lattice relaxation rate divided by temperature 1 /T1T . Finally, we discuss the nematic transition in the paramagnetic orthorhombic phase of NaFeAs from the in-plane anisotropy of 1 /T1T .

A novel wide range, real-time neutron fluence monitor based on commercial off the shelf gallium arsenide light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, B., E-mail: bhaskar.mukherjee@uk-essen.de [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany); Hentschel, R. [Strahlenklinik, University Hospital Essen (Germany); Lambert, J. [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany); Deya, W. [Strahlenklinik, University Hospital Essen (Germany); Farr, J. [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany)

2011-10-01

Displacement damage produced by high-energy neutrons in gallium arsenide (GaAs) light emitting diodes (LED) results in the reduction of light output. Based on this principle we have developed a simple, cost effective, neutron detector using commercial off the shelf (COTS) GaAs-LED for the assessment of neutron fluence and KERMA at critical locations in the vicinity of the 230 MeV proton therapy cyclotron operated by Westdeutsches Protonentherapiezentrum Essen (WPE). The LED detector response (mV) was found to be linear within the neutron fluence range of 3.0x10{sup 8}-1.0x10{sup 11} neutron cm{sup -2}. The response of the LED detector was proportional to neutron induced displacement damage in LED; hence, by using the differential KERMA coefficient of neutrons in GaAs, we have rescaled the calibration curve for two mono-energetic sources, i.e. 1 MeV neutrons and 14 MeV neutrons generated by D+T fusion reaction. In this paper we present the principle of the real-time GaAs-LED based neutron fluence monitor as mentioned above. The device was calibrated using fast neutrons produced by bombarding a thick beryllium target with 14 MeV deuterons from a TCC CV 28 medical cyclotron of the Strahlenklinik University Hospital Essen.

Physico-chemical characterization of terbium-161-chloride (161TbCl3) radioisotope from irradiated natural gadolinium oxide target

International Nuclear Information System (INIS)

Azmairit Aziz; Nana Suherman

2015-01-01

Currently cancer patients are increasing every year in Indonesia and become the third leading cause of death after heart disease and high blood pressure. Terbium-161 ( 161 Tb) is a low β- emitter (E β - = 0.155 MeV, T 1/2 = 6.9 d) and very similar to 177 Lu in terms of half-life, E β - energy and chemical properties.However, 161 Tb also ejects internal conversion electrons and Auger electrons which can provide a greater therapeutic effect than 177 Lu. Radioisotope of 161 Tb can be produced as a carrier-free for use in labeling of biomolecules as a targeted radiopharmaceutical for cancer therapy. 161 Tb was obtained through 160 Gd(n,γ) 161 Tb nuclear reaction by thermal neutron bombardment on 100 mg of natural gadolinium oxide target in RSG-G.A. Siwabessy at a thermal neutron flux of ~10 14 n.cm -2 .s -1 and followed by radiochemical separation of 161 Tb from Gd isotopes using extraction chromatography method. The physico-chemical characterization of 161 TbCl 3 solution was studied by determination of its radionuclide purity by means of a γ-rays spectrometry with HP-Ge detector coupled to a multichannel analyzer (MCA). Radiochemical purity was determined using paper chromatography and paper electrophoresis methods. The results showed that 161 TbCl 3 radioisotope has a pH of 2, radiochemical purity of 99.64 ± 0.34%, radionuclide purity of 99.69 ± 0.20%, specific activity and radioactive concentration at the end of irradiation (EOI) of 2.26 – 5.31 Ci/mg and 3.84 – 9.03 mCi/mL, respectively. 161 TbCl 3 solution stable for 3 weeks at room temperature with a radiochemical purity of 98.41 ± 0.42%. 161 TbCl 3 solution from irradiated natural gadolinium oxide target has the physico-chemical characteristic that meets the requirements for use as a precursor in preparation of radiopharmaceuticals. (author)

A Broad G Protein-Coupled Receptor Internalization Assay that Combines SNAP-Tag Labeling, Diffusion-Enhanced Resonance Energy Transfer, and a Highly Emissive Terbium Cryptate.

Science.gov (United States)

Levoye, Angélique; Zwier, Jurriaan M; Jaracz-Ros, Agnieszka; Klipfel, Laurence; Cottet, Martin; Maurel, Damien; Bdioui, Sara; Balabanian, Karl; Prézeau, Laurent; Trinquet, Eric; Durroux, Thierry; Bachelerie, Françoise

2015-01-01

Although G protein-coupled receptor (GPCR) internalization has long been considered as a major aspect of the desensitization process that tunes ligand responsiveness, internalization is also involved in receptor resensitization and signaling, as well as the ligand scavenging function of some atypical receptors. Internalization thus contributes to the diversity of GPCR-dependent signaling, and its dynamics and quantification in living cells has generated considerable interest. We developed a robust and sensitive assay to follow and quantify ligand-induced and constitutive-induced GPCR internalization but also receptor recycling in living cells. This assay is based on diffusion-enhanced resonance energy transfer (DERET) between cell surface GPCRs labeled with a luminescent terbium cryptate donor and a fluorescein acceptor present in the culture medium. GPCR internalization results in a quantifiable reduction of energy transfer. This method yields a high signal-to-noise ratio due to time-resolved measurements. For various GPCRs belonging to different classes, we demonstrated that constitutive and ligand-induced internalization could be monitored as a function of time and ligand concentration, thus allowing accurate quantitative determination of kinetics of receptor internalization but also half-maximal effective or inhibitory concentrations of compounds. In addition to its selectivity and sensitivity, we provided evidence that DERET-based internalization assay is particularly suitable for characterizing biased ligands. Furthermore, the determination of a Z'-factor value of 0.45 indicates the quality and suitability of DERET-based internalization assay for high-throughput screening (HTS) of compounds that may modulate GPCRs internalization.

Therapeutic use of radioactive isotopes

CERN Document Server

Caroline Duc

2013-01-01

In December, researchers from ISOLDE-CERN, the Paul Scherrer Institute (PSI) and the Institut Laue-Langevin (ILL) published the results of an in vivo study which successfully proved the effectiveness of four terbium isotopes for diagnosing and treating cancerous tumours.   Four terbium isotopes suitable for clinical purposes. “ISOLDE is the only installation capable of supplying terbium isotopes of such purity and intensity in the case of three out of the four types used in this study,” explains Karl Johnson, a physicist at ISOLDE.  “Producing over a thousand different isotopes, our equipment offers the widest choice of isotopes in the world!” Initially intended for fundamental physics research, ISOLDE has diversified its activities over time to invest in various projects in the materials science, biochemistry and nuclear medicine fields. The proof-of-concept study has confirmed that the four terbium isotopes 149Tb, 152Tb, 155Tb produ...

A broad G protein-coupled receptor internalization assay that combines SNAP-tag labeling, diffusion-enhanced resonance energy transfer, and a highly emissive terbium cryptate acceptor

Directory of Open Access Journals (Sweden)

Angélique eLEVOYE

2015-11-01

Full Text Available Although G protein-coupled receptor (GPCR internalization has long been considered a major aspect of the desensitization process that tunes ligand responsiveness, internalization is also involved in receptor resensitization and signaling, as well as the ligand scavenging function of some atypical receptors. Internalization thus contributes to the diversity of GPCR-dependent signaling, and its dynamics and quantification in living cells has generated considerable interest. We developed a robust and sensitive assay to follow and quantify ligand-induced and constitutive GPCR internalization but also receptor recycling in living cells. This assay is based on diffusion-enhanced resonance energy transfer (DERET between cell surface GPCRs labeled with a luminescent terbium cryptate donor and a fluorescein acceptor present in the culture medium. GPCR internalization results in a quantifiable reduction of energy transfer. This method yields a high signal-to-noise ratio due to time-resolved measurements. For various GPCRs belonging to different classes, we demonstrated that constitutive and ligand-induced internalization could be monitored as a function of time and ligand concentration, thus allowing accurate quantitative determination of kinetics of receptor internalization but also half-maximal effective or inhibitory concentrations of compounds. In addition to its selectivity and sensitivity, we provided evidence that DERET-based internalization assay is particularly suitable for characterizing biased ligands. Furthermore, the determination of a Z’-factor value of 0.45 indicates the quality and suitability of DERET-based internalization assay for high-throughput screening (HTS of compounds that may modulate GPCRs internalization.

An ICP AES method for determination of dysprosium and terbium in high purity yttrium oxide

International Nuclear Information System (INIS)

Rupawate, V.H.; Hareendran, K.N.; Roy, S.B.

2011-01-01

High purity yttrium finds interesting application in astronavigation, luminescence, nuclear energy and metallurgical industries. Most of these applications require yttrium oxide of highest purity. Consequently there is a need for production of high purity yttrium oxide. Separation and purification of yttrium from other rare earths is a challenging task due to their close chemical properties. Liquid-liquid extraction and ion exchange have been widely used in the production of yttrium oxide of highest purity. Determination of impurities, especially other rare earths, in ppm level is required for process development and chemical characterization of the high purity Y 2 O 3 . Many methods have been described in literature. However since the advent of ICP AES much work in this area has been carried out by this technique. This paper describes the work done for determination of dysprosium (Dy) and terbium (Tb) in yttrium oxide using a high resolution sequential ICP AES. Emission spectra of rare earth elements are very complex and due to this complexity it is important to select spectral interference free analyte lines for determination of rare earths in rare earth matrix. For the determination of Dy and Tb in Y 2 O 3 , sensitive lines of Dy and Tb are selected from the instrument wavelength table and spectral interference free emission lines for the determination is selected by scanning around the selected wavelengths using 5 g/L Y solution and 5 mg/L standard solutions of Dy and Tb prepared in 4% nitric acid. It is found 353.170 nm line of Dy and 350.917 nm line Tb is suitable for quantitative determination. The signal to background ratio increases with increase in matrix concentration, i.e. from 1 to 5 mg/L. The optimum forward power is determined and it is found to be 1100W for Dy and 1000W for Tb. The instrument is calibrated using matrix matched standards containing 5g/L of Y matrix. Samples are dissolved in nitric acid and Y concentration is maintained at 5g/L. Two

Study by optical spectroscopy of the interaction between a hydrogen multi-polar plasma and a gallium arsenide surface

International Nuclear Information System (INIS)

Ferdinand, Robin

1990-01-01

The objective of this research thesis has been to understand which are the involved species during the deoxidation-passivation stage of the processing of gallium arsenide platelets used in semiconductor industry. The author describes problems related to the presence of oxides, and highlights the benefit of using a hydrogen multi-polar plasma to softly remove surface oxides. The experimental set-up is notably characterised by the role of magnetic confinement and its influence on plasma. A theoretical model is then developed for a better understanding of chemical and physical-chemical reactions occurring in the hydrogen plasma. Based on the use of the Boltzmann equation, the model calculates the electron energy distribution function, and allows the follow-up of species present in the plasma with respect to available and accessible parameters (pressure, discharge current, discharge voltage). A spectroscopic study of the hydrogen plasma is then reported, and the numerical model is validated by interpreting line shapes of the hydrogen Balmer series. A second experimental approach, based on electrostatic probes, is implemented, and the Laframboise theory is applied to this technique and allows electronic and ionic densities, and electron temperature to be determined. Experimental and numerical results are compared. All this leads to the study of the interaction of plasma with a sample, with a first step of study of a mixture plasma containing 85 per cent of hydrogen and 15 per cent of arsine, in order to get a general knowledge of emissions related to the presence of AsH 3 . Finally, interaction studies are performed by using laser-induced fluorescence and conventional space-resolved optical spectroscopy

Study of the role of complete fusion in the reaction of /sup 48/Ca and /sup 56/Fe with cerium and terbium. [Cross sections, yield curves, tables

Energy Technology Data Exchange (ETDEWEB)

Morrissey, D.J.

1978-05-01

/sup 48/Ca and /sup 56/Fe beams from the Super HILAC accelerator were used to irradiate thick metal foils of cerium and terbium. Product gamma ray activities were detected offline and individual products were identified by half-life, gamma ray energy and gamma ray abundances. The production cross sections were iteratively fit to charge and mass dispersions to allow correction for parent decay and calculation of mass yields. From the mass yield curves contributions from quasielastic transfer, deep inelastic transfer and complete fusion reaction mechanisms were interred. Complete fusion was made up on contributions from both evaporation residue and fusion-fission products for the /sup 48/Ca induced reactions. However, only fusion-fission products were detected in the /sup 56/Fe induced reactions. Critical angular momenta for fusion were found to be 82 +- 8 h for /sup 48/Ca + /sup 159/Tb and 34 +- 5 h for /sup 56/Fe + /sup 140/Ce, which can be compared with 53 +- 8 h for /sup 12/C + /sup 197/Au (Natowitz, 1970) and 86 +- 5 h for /sup 40/Ar + /sup 165/Ho (Hanappe, 1973). All of these reactions lead to essentially the same compound nucleus and seem to show the dramatic decline in complete fusion for heavy ions larger than /sup 40/Ar. The prediction of this decline was found to be beyond the model calculations of Bass and the critical distance approach of Glas and Mosel.

Evolution of magnetic and superconducting phases with doping and pressure in the underdoped iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Hassinger, Elena [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada); Max Planck Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Gredat, Gregory; Valade, Fabrice; Rene de Cotret, Samuel; Juneau-Fecteau, Alexandre; Reid, Jean-Philippe; Doiron-Leyraud, Nicolas [Universite de Sherbrooke, Quebec (Canada); Kim, H.; Tanatar, Makariy A.; Prozorov, Ruslan [Ames Laboratory, Ames, Iowa (United States); Shen, B.; Wen, H.H. [Nanjing University (China); Taillefer, Louis [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada)

2015-07-01

The electrical resistivity ρ of the iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2} was measured in applied pressures up to 2.75 GPa for seven underdoped samples. Six of them are antiferromagnetic at P = 0 with 0.16 < x < 0.24 and one is non-magnetic with x = 0.26. The stripe-like antiferromagnetic ordering temperature T{sub N}, detected as a sharp anomaly in ρ(T), decreases linearly with pressure. For every magnetic sample a second phase appears with pressure at a lower temperature T{sub 0}, which rises with pressure. The critical pressure above which this phase appears decreases with doping going to zero for x = 0.24 just below the critical doping for the magnetic phase. This behaviour is reminiscent of the second magnetic phase appearing in Ba{sub 0.76}Na{sub 0.24}Fe{sub 2}As{sub 2} where the tetragonal symmetry is restored in favour of the scenario in which the nematic order in the iron pnictides is of magnetic origin.

Biological monitoring of arsenic exposure of gallium arsenide- and inorganic arsenic-exposed workers by determination of inorganic arsenic and its metabolites in urine and hair

Energy Technology Data Exchange (ETDEWEB)

Yamauchi, H.; Takahashi, K.; Mashiko, M.; Yamamura, Y. (St. Marianna Univ. School of Medicine, Kawasaki (Japan))

1989-11-01

In an attempt to establish a method for biological monitoring of inorganic arsenic exposure, the chemical species of arsenic were measured in the urine and hair of gallium arsenide (GaAs) plant and copper smelter workers. Determination of urinary inorganic arsenic concentration proved sensitive enough to monitor the low-level inorganic arsenic exposure of the GaAs plant workers. The urinary inorganic arsenic concentration in the copper smelter workers was far higher than that of a control group and was associated with high urinary concentrations of the inorganic arsenic metabolites, methylarsonic acid (MAA) and dimethylarsinic acid (DMAA). The results established a method for exposure level-dependent biological monitoring of inorganic arsenic exposure. Low-level exposures could be monitored only by determining urinary inorganic arsenic concentration. High-level exposures clearly produced an increased urinary inorganic arsenic concentration, with an increased sum of urinary concentrations of inorganic arsenic and its metabolites (inorganic arsenic + MAA + DMAA). The determination of urinary arsenobetaine proved to determine specifically the seafood-derived arsenic, allowing this arsenic to be distinguished clearly from the arsenic from occupational exposure. Monitoring arsenic exposure by determining the arsenic in the hair appeared to be of value only when used for environmental monitoring of arsenic contamination rather than for biological monitoring.

Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

International Nuclear Information System (INIS)

Thomas, Tegan; Blackman, Christopher S.; Parkin, Ivan P.; Carmalt, Claire J.

2013-01-01

Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl 4 or VOCl 3 with t BuAsH 2 . Using the vanadium precursor VCl 4 , films were deposited at substrate temperatures of 550–600 °C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl 3 as the vanadium source resulted in films being deposited between 450 and 600 °C and, unlike when using VCl 4 , were silver in appearance. The films deposited using VOCl 3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. - Highlights: • Formation of VAs films via atmospheric pressure chemical vapour deposition. • Films formed using VCl 4 or VOCl 3 and t BuAsH 2 . • Powder X-ray diffraction showed that crystalline VAs films were deposited. • Films from VOCl 3 had a V:As ratio close to 1 with negligible Cl incorporation. • Films were silver and possessed borderline metallic/semiconductor resistivities

Native copper in Permian Mudstones from South Devon: A natural analogue of copper canisters for high-level radioactive waste

International Nuclear Information System (INIS)

Milodowski, A.E.; Styles, M.T.; Werme, L.; Oversby, V.M.

2001-01-01

Native copper (>99.9% Cu) sheets associated with complex uraniferous and vanadiferous concretions in Upper Permian Mudstones from south Devon (United Kingdom) have been studied as a 'natural analogue' for copper canisters designed to be used in the isolation of spent fuel and high-level radioactive wastes (HLW) for deep geological disposal. Detailed analysis demonstrates that the copper formed before the mudstones were compacted. The copper displays complex corrosion and alteration. The earliest alteration was to copper oxides, followed sequentially by the formation of copper arsenides, nickel arsenide and copper sulphide, and finally nickel arsenide accompanied by nickel-copper arsenide, copper arsenide and uranium silicates. Petrographic observations demonstrate that these alteration products also formed prior to compaction. Consideration of the published history for the region indicates that maximum compaction of the rocks will have occurred by at least the Lower Jurassic (i.e. over 176 Ma ago). Since that time the copper sheets have remained isolated by the compacted mudstones and were unaffected by further corrosion until uplift and exposure to present-day surface weathering

Radiochemical separation of Tb-149 after tandem accelerator production

International Nuclear Information System (INIS)

Sarkar, S.R.

1996-01-01

Full text: Terbium-149 is produced by the heavy ion induced reaction of the type 142 Nd( 12 C,5n) 149 Dy→ 149 Tb. This work concerns the separation of terbium from neodymium target, and other lanthanides produced by secondary reactions on neodymium target. Firstly, anion-exchange separation is carried out at room temperature using acid-alcohol media (90% methanol-10% 5M nitric acid) as eluent. But the separation is not satisfactory. To achieve satisfactory separation, cation exchange separation is performed under pressure at room temperature using 0.1 6M α-hydroxyisobutyric acid of pH 5 as eluent. The pressure is exerted from a nitrogen gas cylinder. The simplicity and efficacy of this method for the separation of terbium are discussed in comparison with the commercially available high performance liquid chromatography system

Investigation of the chemistry of the dielectric/FeCoTb interface by x-ray photoelectron spectroscopy and Auger electron spectroscopy

International Nuclear Information System (INIS)

Stickle, W.F.; Coulman, D.

1987-01-01

The interfacial chemistry of magneto-optic structures of sputter deposited SiO, SiO 2 , Si 3 N 4 /FeCoTb/SiO, SiO 2 , and Si 3 N 4 was studied in detail by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). XPS and AES depth profiles have revealed a substantial amount of redox chemistry at the dielectric/rare-earth transition metal interfaces. The chemical reactions occur preferentially with the terbium as revealed in the XPS portion of the study by the formation of terbium oxide and terbium silicide. In the case of Si 3 N 4 evidence of TbN/sub x/ has also been observed. ''As deposited'' and annealed samples of the magneto-optic structures are compared and contrasted. It is concluded that Si 3 N 4 is a superior dielectric for magneto-optic media

Luminescent materials based on Tb, Eu-containing layered double hydroxides

International Nuclear Information System (INIS)

Zhuravleva, N.G.; Eliseev, A.A.; Lukashin, A.V.; Kinast, U.; Tret'yakov, Yu.D.

2004-01-01

Luminescent materials on the basis of magnesium-aluminium layered double hydroxides with intercalated anionic complexes of terbium and europium picolinates were synthesized. Relying on data of spectroscopy, elementary and X-ray phase analyses, the change in the rare earth complex structure and metal/ligand ratio, depending on the hydroxide layer charge, determined by Mg/Al ratio in the double hydroxide, were ascertained. The values of quantum yields of luminescence for terbium-containing samples amounted to 30-50% [ru

Reactive Chemical Vapor Deposition Method as New Approach for Obtaining Electroluminescent Thin Film Materials

Directory of Open Access Journals (Sweden)

Valentina V. Utochnikova

2012-01-01

Full Text Available The new reactive chemical vapor deposition (RCVD method has been proposed for thin film deposition of luminescent nonvolatile lanthanide aromatic carboxylates. This method is based on metathesis reaction between the vapors of volatile lanthanide dipivaloylmethanate (Ln(dpm3 and carboxylic acid (HCarb orH2Carb′ and was successfully used in case of HCarb. Advantages of the method were demonstrated on example of terbium benzoate (Tb(bz3 and o-phenoxybenzoate thin films, and Tb(bz3 thin films were successfully examined in the OLED with the following structure glass/ITO/PEDOT:PSS/TPD/Tb(bz3/Ca/Al. Electroluminescence spectra of Tb(bz3 showed only typical luminescent bands, originated from transitions of the terbium ion. Method peculiarities for deposition of compounds of dibasic acids H2Carb′ are established on example of terbium and europium terephtalates and europium 2,6-naphtalenedicarboxylate.

Scanning Electron Microscope-Cathodoluminescence Analysis of Rare-Earth Elements in Magnets.

Science.gov (United States)

Imashuku, Susumu; Wagatsuma, Kazuaki; Kawai, Jun

2016-02-01

Scanning electron microscope-cathodoluminescence (SEM-CL) analysis was performed for neodymium-iron-boron (NdFeB) and samarium-cobalt (Sm-Co) magnets to analyze the rare-earth elements present in the magnets. We examined the advantages of SEM-CL analysis over conventional analytical methods such as SEM-energy-dispersive X-ray (EDX) spectroscopy and SEM-wavelength-dispersive X-ray (WDX) spectroscopy for elemental analysis of rare-earth elements in NdFeB magnets. Luminescence spectra of chloride compounds of elements in the magnets were measured by the SEM-CL method. Chloride compounds were obtained by the dropwise addition of hydrochloric acid on the magnets followed by drying in vacuum. Neodymium, praseodymium, terbium, and dysprosium were separately detected in the NdFeB magnets, and samarium was detected in the Sm-Co magnet by the SEM-CL method. In contrast, it was difficult to distinguish terbium and dysprosium in the NdFeB magnet with a dysprosium concentration of 1.05 wt% by conventional SEM-EDX analysis. Terbium with a concentration of 0.02 wt% in an NdFeB magnet was detected by SEM-CL analysis, but not by conventional SEM-WDX analysis. SEM-CL analysis is advantageous over conventional SEM-EDX and SEM-WDX analyses for detecting trace rare-earth elements in NdFeB magnets, particularly dysprosium and terbium.

Cermet electrode

Science.gov (United States)

Maskalick, Nicholas J.

1988-08-30

Disclosed is a cermet electrode consisting of metal particles of nickel, cobalt, iron, or alloys or mixtures thereof immobilized by zirconia stabilized in cubic form which contains discrete deposits of about 0.1 to about 5% by weight of praseodymium, dysprosium, terbium, or a mixture thereof. The solid oxide electrode can be made by covering a substrate with particles of nickel, cobalt, iron, or mixtures thereof, growing a stabilized zirconia solid oxide skeleton around the particles thereby immobilizing them, contacting the skeleton with a compound of praseodymium, dysprosium, terbium, or a mixture thereof, and heating the skeleton to a temperature of at least 500.degree. C. The electrode can also be made by preparing a slurry of nickel, cobalt, iron, or mixture and a compound of praseodymium, dysprosium, terbium, or a mixture thereof, depositing the slurry on a substrate, heating the slurry to dryness, and growing a stabilized zirconia skeleton around the metal particles.

Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

Science.gov (United States)

2007-06-01

models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

a Positron 2D-ACAR Study of the Silicon-Dioxide Interface and the Point Defects in the Semi-Insulating Gallium Arsenide

Science.gov (United States)

Peng, Jianping

The SiO_2-Si system has been the subject of extensive study for several decades. Particular interest has been paid to the interface between Si single crystal and the amorphous SiO_2 which determines the properties and performances of devices. This is significant because of the importance of Si technology in the semiconductor industry. The development of the high-intensity slow positron beam at Brookhaven National Laboratory make it possible to study this system for the first time using the positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique. 2D-ACAR is a well established and is a non-destructive microscopic probe for studying the electronic structure of materials, and for doing the depth-resolved measurements. Some unique information was obtained from the measurements performed on the SiO_2-Si system: Positronium (Ps) atoms formation and trapping in microvoids in both oxide and interface regions; and positron annihilation at vacancy-like defects in the interface region which can be attributed to the famous Pb centers. The discovery of the microvoids in the interface region may have some impact on the fabrication of the next generation electronic devices. Using the conventional 2D-ACAR setup with a ^{22}Na as positron source, we also studied the native arsenic (As) vacancy in the semi -insulating gallium-arsenide (SI-GaAs), coupled with in situ infrared light illumination. The defect spectrum was obtained by comparing the spectrum taken without photo -illumination to the spectrum taken with photo-illumination. The photo-illumination excited electrons from valence band to the defect level so that positrons can become localized in the defects. The two experiments may represent a new direction of the application of positron 2D-ACAR technique on the solid state physics and materials sciences.

Polarized electron sources

Energy Technology Data Exchange (ETDEWEB)

Prepost, R. [Univ. of Wisconsin, Madison, WI (United States)

1994-12-01

The fundamentals of polarized electron sources are described with particular application to the Stanford Linear Accelerator Center. The SLAC polarized electron source is based on the principle of polarized photoemission from Gallium Arsenide. Recent developments using epitaxially grown, strained Gallium Arsenide cathodes have made it possible to obtain electron polarization significantly in excess of the conventional 50% polarization limit. The basic principles for Gallium and Arsenide polarized photoemitters are reviewed, and the extension of the basic technique to strained cathode structures is described. Results from laboratory measurements of strained photocathodes as well as operational results from the SLAC polarized source are presented.

Polarized electron sources

International Nuclear Information System (INIS)

Prepost, R.

1994-01-01

The fundamentals of polarized electron sources are described with particular application to the Stanford Linear Accelerator Center. The SLAC polarized electron source is based on the principle of polarized photoemission from Gallium Arsenide. Recent developments using epitaxially grown, strained Gallium Arsenide cathodes have made it possible to obtain electron polarization significantly in excess of the conventional 50% polarization limit. The basic principles for Gallium and Arsenide polarized photoemitters are reviewed, and the extension of the basic technique to strained cathode structures is described. Results from laboratory measurements of strained photocathodes as well as operational results from the SLAC polarized source are presented

Preparation and photoluminescence characteristics of In(OH){sub 3}:xTb{sup 3+} obtained by Microwave-Assisted Hydrothermal method

Energy Technology Data Exchange (ETDEWEB)

Motta, F.V., E-mail: fabiana@ct.ufrn.br [DEMAT, CT, UFRN, Av. Sen. Salgado Filho 3000, CEP 59072-970 Natal, RN (Brazil); Marques, A.P.A. [UNIFESP, Rua Prof. Artur Riedel 275, CEP 09972-270 Diadema, SP (Brazil); Li, M.S. [IFSC, USP, Av. Trabalhador São Carlense 400, CEP 13566-590 São Carlos, SP (Brazil); Abreu, M.F.C. [LIEC, DQ, UFSCar, Via Washington Luiz, km 235, CEP 13565-905 São Carlos, SP (Brazil); Paskocimas, C.A.; Bomio, M.R.D. [DEMAT, CT, UFRN, Av. Sen. Salgado Filho 3000, CEP 59072-970 Natal, RN (Brazil); Souza, R.P. [DEP, CT, UFRN, Av. Sen. Salgado Filho 3000, CEP 59072-970 Natal, RN (Brazil); Varela, J.A. [LIEC, IQ, UNESP, Rua Francisco Degni s/n, CEP 14801-907 Araraquara, SP (Brazil); Longo, E. [LIEC, DQ, UFSCar, Via Washington Luiz, km 235, CEP 13565-905 São Carlos, SP (Brazil)

2013-03-15

Highlights: ► We report the preparation by Microwave-Hydrothermal method of In(OH){sub 3}:xTb{sup 3+}. ► Nanostructures were obtained at a low temperature. ► The crystallite size decreased with terbium doping level. ► The nucleation–dissolution–recrystallization mechanism is promoted by processing. ► This material is a highly promising candidate for photoluminescent applications. -- Abstract: Crystalline terbium-doped indium hydroxide structures were prepared by a rapid and efficient Microwave-Assisted Hydrothermal (MAH) method. Nanostructures were obtained at a low temperature. FE-SEM images confirm that these samples are composed of 3D nanostructures. XRD, optical diffuse reflectance and photoluminescence (PL) measurements were used to characterize the products. Emission spectra of terbium-doped indium hydroxide (In(OH){sub 3}:xTb{sup 3+}) samples under excitation (350.7 nm) presented broad band emission referent to the indium hydroxide matrix and {sup 5}D{sub 4} → {sup 7}F{sub 6}, {sup 5}D{sub 4} → {sup 7}F{sub 5}, {sup 5}D{sub 4} → {sup 7}F{sub 4}, and {sup 5}D{sub 4} → {sup 7}F{sub 3} terbium transitions at 495, 550, 590 and 627 nm, respectively. Relative intensities of the Tb{sup 3+} emissions increased as the concentration of this ion increased from 0, 1, 2, 4 and 8 mol%, of Tb{sup 3+}, but the luminescence is drastically quenched for the In(OH){sub 3} matrix.

Extraction of nitrates of lanthanoids (3) of the yttrium group and yttrium (3) by trialkylbenzylammonium nitrate in toluene

International Nuclear Information System (INIS)

Pyartman, A.K.; Kovalev, S.V.; Keskinov, V.A.; Kopyrin, A.A.

1997-01-01

A study was made on extraction of nitrates of lanthanoids (3) of the yttrium group (terbium-lutetium) and yttrium (3) by trialkylbensylammonium nitrate in toluene at T=298.15 K pH 2. Extraction isotherms are described with account of formation of compound of (R 4 N) 2 [Ln(NO 3 ) 5 ] composition in organic phase. Values of extraction constants decreasing in terbium (3)-lutetium (3) series, were calculated. Value of extraction constant for yttrium (3) is close to the value of extraction constant for ytterbium (3). 13 refs., 2 figs., 3 tabs

Kinetic study of Tb/sup 3 +/(/sup 5/D/sub 3/) luminescence in phosphate glasses

Energy Technology Data Exchange (ETDEWEB)

Anisimov, V.A.; Dmitryuk, A.V.; Karapetyan, G.O.

1986-01-01

This paper presents precise determinations of the kinetics of terbium luminescence over a broad dynamic range, in order to refine the mechanism of concentration quenching of the Tb/sup 3 +/(/sup 5/D/sub 3/) luminescence in glasses. After establishing the mechanism of Tb/sup 3 +/(/sup 5/D/sub 3/) luminescence quenching by the iteration method, the authors determine the value of the parameter for an arbitrary concentration of the activator. Results of this study show that the mechanism of concentration quenching of luminescence is static dipole-dipole interaction of terbium ions.

Synthesis of Tb_4O_7 complexed with reduced graphene oxide for Rhodamine-B absorption

International Nuclear Information System (INIS)

Gao, Hui; Zhou, Yang; Chen, Keqin; Li, Xiaolong

2016-01-01

Highlights: • Tb–rGO composite was fabricated via a facile thermally reduction process. • The green and blue emissions were both observed in the composite. • The composite exhibited efficient absorption capability for Rhodamine-B. - Abstract: Tb_4O_7 complexed with reduced graphene oxide composite (Tb–rGO) had been designed and fabricated by a facile thermal reduction method. The formation of Tb_4O_7 particles and reduction of graphene oxide (GO) occurred simultaneously, and partial terbium ions would be complexed with rGO via oxygen-containing function groups on rGO sheets. Introducing of terbium ions could effectively tune the photoluminescence properties of rGO, and the composite exhibited the typical green emission of terbium ions as well as the blue self-luminescence of graphene entered at 440 nm. Moreover, Tb–rGO had demonstrated its high capability as an organic dye (Rhodamine-B) scavenger with high speed and efficiency. The findings showed the promising applications for large-scale removal of organic dye contaminants, especially in the field of waste water treatment.

Synthesis of Tb{sub 4}O{sub 7} complexed with reduced graphene oxide for Rhodamine-B absorption

Energy Technology Data Exchange (ETDEWEB)

Gao, Hui, E-mail: hope@lzu.edu.cn [School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Zhou, Yang; Chen, Keqin [School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Li, Xiaolong, E-mail: lixiaolong@sinap.ac.cn [Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204 (China)

2016-05-15

Highlights: • Tb–rGO composite was fabricated via a facile thermally reduction process. • The green and blue emissions were both observed in the composite. • The composite exhibited efficient absorption capability for Rhodamine-B. - Abstract: Tb{sub 4}O{sub 7} complexed with reduced graphene oxide composite (Tb–rGO) had been designed and fabricated by a facile thermal reduction method. The formation of Tb{sub 4}O{sub 7} particles and reduction of graphene oxide (GO) occurred simultaneously, and partial terbium ions would be complexed with rGO via oxygen-containing function groups on rGO sheets. Introducing of terbium ions could effectively tune the photoluminescence properties of rGO, and the composite exhibited the typical green emission of terbium ions as well as the blue self-luminescence of graphene entered at 440 nm. Moreover, Tb–rGO had demonstrated its high capability as an organic dye (Rhodamine-B) scavenger with high speed and efficiency. The findings showed the promising applications for large-scale removal of organic dye contaminants, especially in the field of waste water treatment.

The crystal structure and luminescence quenching of poly- and single-crystalline KYW{sub 2}O{sub 8}:Tb{sup 3+}

Energy Technology Data Exchange (ETDEWEB)

Schwung, Sebastian [Fachbereich Chemieingenieurwesen, Fachhochschule Münster, Stegerwaldstraße 39, 48565 Steinfurt (Germany); Rytz, Daniel, E-mail: rytz@fee-io.de [Forschungsinstitut für mineralische und metallische Werkstoffe-Edelsteine/ Edelmetalle-GmbH (FEE), Struthstraße 2, 55743 Idar-Oberstein (Germany); Heying, Birgit; Rodewald, Ute Ch.; Niehaus, Oliver [Institut für Anorganische und Analytische Chemie, Universität Münster, Corrensstrasse 30 48149 Münster (Germany); Enseling, David [Fachbereich Chemieingenieurwesen, Fachhochschule Münster, Stegerwaldstraße 39, 48565 Steinfurt (Germany); Jüstel, Thomas, E-mail: tj@fh-muenster.de [Fachbereich Chemieingenieurwesen, Fachhochschule Münster, Stegerwaldstraße 39, 48565 Steinfurt (Germany); Pöttgen, Rainer, E-mail: pottgen@uni-muenster.de [Institut für Anorganische und Analytische Chemie, Universität Münster, Corrensstrasse 30 48149 Münster (Germany)

2015-10-15

Terbium-substituted KYW{sub 2}O{sub 8} single crystals of high optical quality were grown by the top seeded solution growth technique. The degree of yttrium–terbium mixed occupancy was determined for two samples through structure refinements on the basis of single crystal X-ray diffractometer data. Temperature dependent magnetic susceptibility data underline the paramagnetic nature of terbium doped crystals. No magnetic ordering is evident down to 2 K. Luminescence measurements yield the typical excitation and emission spectra as expected for Tb{sup 3+} activated materials. The decay time of Tb{sup 3+} decreases linearly with the Tb{sup 3+} concentration, while the excess of thermal quenching does not change significantly. At about 405 K the decay time is reduced by roughly 50% relative to the low-temperature value, both for the powders as for the single crystals. - Highlights: • Single crystalline and powder series of K(Y,Tb)W{sub 2}O{sub 8.} • Refined XRD data of high quality crystals. • Linear decrease of the decay time with Tb{sup 3+} content.

Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

Science.gov (United States)

Kallaher, Raymond L.

This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

Influence of intramolecular f-f interactions on nuclear spin driven quantum tunneling of magnetizations in quadruple-decker phthalocyanine complexes containing two terbium or dysprosium magnetic centers.

Science.gov (United States)

Fukuda, Takamitsu; Matsumura, Kazuya; Ishikawa, Naoto

2013-10-10

Nuclear spin driven quantum tunneling of magnetization (QTM) phenomena, which arise from admixture of more than two orthogonal electronic spin wave functions through the couplings with those of the nuclear spins, are one of the important magnetic relaxation processes in lanthanide single molecule magnets (SMMs) in the low temperature range. Although recent experimental studies have indicated that the presence of the intramolecular f-f interactions affects their magnetic relaxation processes, little attention has been given to their mechanisms and, to the best of our knowledge, no rational theoretical models have been proposed for the interpretations of how the nuclear spin driven QTMs are influenced by the f-f interactions. Since quadruple-decker phthalocyanine complexes with two terbium or dysprosium ions as the magnetic centers show moderate f-f interactions, these are appropriate to investigate the influence of the f-f interactions on the dynamic magnetic relaxation processes. In the present paper, a theoretical model including ligand field (LF) potentials, hyperfine, nuclear quadrupole, magnetic dipolar, and the Zeeman interactions has been constructed to understand the roles of the nuclear spins for the QTM processes, and the resultant Zeeman plots are obtained. The ac susceptibility measurements of the magnetically diluted quadruple-decker monoterbium and diterbium phthalocyanine complexes, [Tb-Y] and [Tb-Tb], have indicated that the presence of the f-f interactions suppresses the QTMs in the absence of the external magnetic field (H(dc)) being consistent with previous reports. On the contrary, the faster magnetic relaxation processes are observed for [Tb-Tb] than [Tb-Y] at H(dc) = 1000 Oe, clearly demonstrating that the QTMs are rather enhanced in the presence of the external magnetic field. Based on the calculated Zeeman diagrams, these observations can be attributed to the enhanced nuclear spin driven QTMs for [Tb-Tb]. At the H(dc) higher than 2000 Oe, the

Interdigitated Back-Surface-Contact Solar Cell Modeling Using Silvaco Atlas

Science.gov (United States)

2015-06-01

and Gallium Arsenide, and triple -junction cells with Indium Gallium Phosphide, Gallium Arsenide, and Germanium. Work was also done by Fotis [4] on...output power at various points on the IV curve, from [15]. ............................18 Figure 15. IV curve with the MPP. The orange area is...53 Figure 35. Simulation results of cell power output at maximum power point for varying bulk thicknesses

Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

International Nuclear Information System (INIS)

ISLAM, N.E.; SCHAMILOGLU, E.; MAR, ALAN; LOUBRIEL, GUILLERMO M.; ZUTAVERN, FRED J.; JOSHI, R.P.

2000-01-01

The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 10 4 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10 8 shots for electro-optic drivers. Much effort is currently being channeled in the

Synthesis, Photoluminescence Behavior of Green Light Emitting Tb(III) Complexes and Mechanistic Investigation of Energy Transfer Process.

Science.gov (United States)

Bala, Manju; Kumar, Satish; Devi, Rekha; Khatkar, Avni; Taxak, V B; Boora, Priti; Khatkar, S P

2018-06-04

A series of five new terbium(III) ion complexes with 4,4-difluoro-1-phenylbutane-1,3-dione (HDPBD) and anciliary ligands was synthesized. The composition and properties of complexes were analyzed by elemental analysis, IR, NMR, powder X-ray diffaraction, TG-DTG and photoluminescence spectroscopy. These complexes exhibited ligand sensitized green emission at 546 nm associated with 5 D 4  →  7 F 5 transitions of terbium ion in the emission spectra. The photoluminescence study manifested that the organic ligands act as antenna and facilitate the absorbed energy to emitting levels of Tb(III) ion efficiently. The enhanced luminescence intensity and decay time of ternary C2-C5 complexes observed due to synergistic effect of anciliary ligands. The CIE color coordinates of complexes came under the green region of chromaticity diagram. The mechanistic investigation of intramolecular energy transfer in the complexes was discussed in detail. These terbium(III) complexes can be thrivingly used as one of the green component in light emitting material and in display devices. Graphical Abstract Illustrate the sensitization process of the Tb ion and intramolecular energy transfer process in the Tb 3+ complex.

Synthesis, structure and photoluminescence of novel lanthanide (Tb(III), Gd(III)) complexes with 6-diphenylamine carbonyl 2-pyridine carboxylate

International Nuclear Information System (INIS)

An Baoli; Gong Menglian; Cheah, Kok-Wai; Wong, Wai-Kwok; Zhang Jiming

2004-01-01

A novel organic ligand, 6-diphenylamine carbonyl 2-pyridine carboxylic acid (HDPAP), and the corresponding lanthanide complexes, tris(6-diphenylamine carbonyl 2-pyridine carboxylato) terbium(III) (Tb-DPAP) and tris(6-diphenylamine carbonyl 2-pyridine carboxylato) gadolinium(III) (Gd-DPAP) have been designed and synthesized. The crystal structure and photoluminescence of Tb-DPAP and Gd-DPAP have been studied. The results showed that the lanthanide complexes have electroneutral structures, and the solid terbium complex emits characteristic green fluorescence of Tb(III) ions at room temperature while the gadolinium complex emits the DPAP ligand phosphorescence. The lowest triplet level of DPAP ligand was calculated from the phosphorescence spectrum of Gd-DPAP in N,N-dimethyl formamide (DMF) dilute solution determined at 77 K, and the energy transfer mechanisms in the lanthanide complexes were discussed. The lifetimes of the 5 D 4 levels of Tb 3+ ions in the terbium complex were examined using time-resolved spectroscopy, and the values are 0.0153±0.0001 ms for solid Tb(DPAP) 3 ·11.5H 2 O and 0.074±0.007 ms for 2.5x10 -5 mol/l Tb-DPAP ethanol solution

Direct two-photon excitation of Sm3+, Eu3+, Tb3+, Tb.DOTA-, and Tb.propargylDO3A in solution

Science.gov (United States)

Sørensen, Thomas Just; Blackburn, Octavia A.; Tropiano, Manuel; Faulkner, Stephen

2012-07-01

We have observed direct two-photon excitation of samarium, europium and terbium ions in solution upon near IR excitation using a tuneable pulsed light source, and have also studied two-photon processes in a pair of related terbium complexes, namely [Tb.DOTA]- and Tb.propargylDO3A. Direct two-photon excitation of lanthanides is observed in simple systems in the absence of sensitizing chromophores. Where even simple chromophores such as a triple bond are present in the complex, then single and two-photon excitation of chromophore excited states competes with direct two-photon excitation of the ions and is the dominant pathway for sensitizing formation of the lanthanide excited state.

A scanning tunneling microscopy study of the electronic and spin states of bis(phthalocyaninato)terbium(iii) (TbPc2) molecules on Ag(111).

Science.gov (United States)

Ara, Ferdous; Qi, Zhi Kun; Hou, Jie; Komeda, Tadahiro; Katoh, Keiichi; Yamashita, Masahiro

2016-10-25

In this article, we investigate a single molecule magnet bis(phthalocyaninato)terbium(iii) (TbPc 2 ) molecule film by using low temperature STM. In order to investigate the effect of molecule-substrate interaction on the electronic and spin properties of the adsorbed molecule, we tune the molecule-substrate coupling by switching the substrate between Au(111) and Ag(111), the latter of which provides stronger interaction with the molecule than the former. Despite the enhanced chemical reactivity of the Ag(111) surface compared with Au(111), a well-organized pseudo-square film is formed. In addition, a checker-board type contrast variation is identified, which is well explained by the existence of two types of molecules whose rotational angle between the top and bottom Pc is θ = 45° (bright molecule) and θ = 30° (dark molecule). The expected stronger molecule-substrate interaction, however, appears as an intriguing dI/dV mapping image which reveals the spatial distribution of the density of states (DOS). We identify the contrast reversal in the dI/dV mapping for the molecules of θ = 45° and θ = 30° at the sample voltages of V = 0.7 eV and 1.1 eV. Combined with the density functional theory (DFT) calculation, we attribute this change to the shift of an electronic state due to the rotation of the mutual angle between the top and bottom Pc. For the spin behavior, we previously observed a Kondo resonance for the TbPc 2 molecule adsorbed on the Au(111) surface. On the Ag(111) surface, the Kondo resonance is hardly observed, which is due to the annihilation of the π radical spin by the charge transfer from the substrate to the molecule. Instead we observe a Kondo peak for the molecule on the second layer, for which the spin recovers due to the reduction of the coupling with the substrate. In addition, when a magnetic field of 2 T normal to the surface is applied, the second layer molecule shows a sharp dip at the Fermi level. We attribute this to the inelastic

E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

International Nuclear Information System (INIS)

Moeller, M.; Lima, M. M. Jr. de; Cantarero, A.; Dacal, L. C. O.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

2011-01-01

Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm -1 reveals an E 1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

Science.gov (United States)

Möller, M.; Dacal, L. C. O.; de Lima, M. M.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.; Cantarero, A.

2011-12-01

Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm-1 reveals an E1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

Magnon Interactions in Terbium

DEFF Research Database (Denmark)

Nielsen, Mourits; Bjerrum Møller, Hans; Mackintosh, Allan

1970-01-01

Magnon energies and lifetimes have been studied in Tb and Tb-10% Ho single crystals by inelastic neutron scattering. The lifetimes of magnons propagating in the c-direction have been measured in the ferromagnetic phase of Tb, and are found to decrease with increasing temperature and wave......-vector, probably principally due to magnon-magnon interactions. The interaction of magnons with phonons has also been observed and the effect of Ho impurities on this interaction studied. In addition, excitations which are ascribed to local modes associated with the Ho ions have been observed. The dependence...... of the indirect exchange interaction on temperature in the alloy gives information on the mechanisms responsible for the transition from the helical to ferromagnetic structures. The dependence of the magnon energies on magnetic field at low temperatures gives detailed information on the role of magnetoelastic...

Spin Waves in Terbium

DEFF Research Database (Denmark)

Jensen, J.; Houmann, Jens Christian Gylden; Bjerrum Møller, Hans

1975-01-01

with the symmetry, we deduce the dispersion relation for the spin waves in a basal-plane ferromagnet. This phenomenological spin-wave theory accounts for the observed behavior of the magnon energies in Tb. The two q⃗-dependent Bogoliubov components of the magnon energies are derived from the experimental results......, which are corrected for the effect of the direct coupling between the magnons and the phonons, and for the field dependence of the relative magnetization at finite temperatures. A large q⃗-dependent difference between the two energy components is observed, showing that the anisotropy of the two...

Spin Waves in Terbium

DEFF Research Database (Denmark)

Jensen, J.; Houmann, Jens Christian Gylden

1975-01-01

The selection rules for the linear couplings between magnons and phonons propagating in the c direction of a simple basal-plane hcp ferromagnet are determined by general symmetry considerations. The acoustic-optical magnon-phonon interactions observed in the heavy-rare-earth metals have been...... explained by Liu as originating from the mixing of the spin states of the conduction electrons due to the spin-orbit coupling. We find that this coupling mechanism introduces interactions which violate the selection rules for a simple ferromagnet. The interactions between the magnons and phonons propagating...... in the c direction of Tb have been studied experimentally by means of inelastic neutron scattering. The magnons are coupled to both the acoustic- and optical-transverse phonons. By studying the behavior of the acoustic-optical coupling, we conclude that it is a spin-mixed-induced coupling as proposed...

Combination of photosensitive elements for use in radiography

International Nuclear Information System (INIS)

Bollen, R.H.; Vandenabeele, H.

1976-01-01

A new and improved combination of photosensitive elements is proposed that can be used in radiography. The combination according to the invention is composed of an X-ray fluorescence intensifying screen and a photographic halide of silver containing a color coupler. The color coupler causes a negative silver image and a color image to be formed in the material. The fluorescent layer of the fluorescence screen contains a mixture of lanthanum oxychloride or lanthanum oxybromide activated with terbium or terbium and ytterbium. Detailed information about variants in the composition of the fluorescent substance, the grain sizes of the silver halides, variations of the color couplers and about the coating of the single layers is given. (UWI) [de

Narrowing the gap: from semiconductor to semimetal in the homologous series of rare-earth zinc arsenides RE(2-y)Zn4As4·n(REAs) and Mn-substituted derivatives RE(2-y)Mn(x)Zn(4-x)As4·n(REAs) (RE = La-Nd, Sm, Gd).

Science.gov (United States)

Lin, Xinsong; Tabassum, Danisa; Mar, Arthur

2015-12-14

A homologous series of ternary rare-earth zinc arsenides, prepared by reactions of the elements at 750 °C, has been identified with the formula RE(2-y)Zn4As4·n(REAs) (n = 2, 3, 4) for various RE members. They adopt trigonal structures: RE(4-y)Zn4As6 (RE = La-Nd), space group R3̄m1, Z = 3; RE(5-y)Zn4As7 (RE = Pr, Nd, Sm, Gd), space group P3̄m1, Z = 1; RE(6-y)Zn4As8 (RE = La-Nd, Sm, Gd), space group R3̄m1, Z = 3. The Zn atoms can be partially substituted by Mn atoms, resulting in quaternary derivatives RE(2-y)Mn(x)Zn(4-x)As4·n(REAs). Single-crystal structures were determined for nine ternary and quaternary arsenides RE(2-y)M4As4·n(REAs) (M = Mn, Zn) as representative examples of these series. The structures are built by stacking close-packed nets of As atoms, sometimes in very long sequences, with RE atoms occupying octahedral sites and M atoms occupying tetrahedral sites, resulting in an intergrowth of [REAs] and [M2As2] slabs. The recurring feature of all members of the homologous series is a sandwich of [M2As2]-[REAs]-[M2As2] slabs, while rocksalt-type blocks of [REAs] increase in thickness between these sandwiches with higher n. Similar to the previously known related homologous series REM(2-x)As2·n(REAs) which is deficient in M, this new series RE(2-y)M4As4·n(REAs) exhibits deficiencies in RE to reduce the electron excess that would be present in the fully stoichiometric formulas. Enthalpic and entropic factors are considered to account for the differences in site deficiencies in these two homologous series. Band structure calculations indicate that the semiconducting behaviour of the parent n = 0 member (with CaAl2Si2-type structure) gradually evolves, through a narrowing of the gap between valence and conduction bands, to semimetallic behaviour as the number of [REAs] blocks increases, to the limit of n = ∞ for rocksalt-type REAs.

Peeled film GaAs solar cell development

International Nuclear Information System (INIS)

Wilt, D.M.; Thomas, R.D.; Bailey, S.G.; Brinker, D.J.; DeAngelo, F.L.

1990-01-01

Thin film, single crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/Kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10 6 ) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofloric acid (HF). The intent of this work is to demonstrate the feasibility of using the peeled film technique to fabricate high efficiency, low mass GaAs solar cells. We have successfully produced a peeled film GaAs solar cell. The device, although fractured and missing the aluminum gallium arsenide (Al x Ga 1 - x As) window and antireflective (AR) coating, had a Voc of 874 mV and a fill factor of 68% under AMO illumination

Electrically Driven Photonic Crystal Nanocavity Devices

Science.gov (United States)

2012-01-01

material, here gallium arsenide and indium arsenide self- assembled quantum dots (QDs). QDs are preferred for the gain medium because they can have...blue points ) and 150 K (green points ). The black lines are linear fits to the above threshold output power of the lasers, which are used to find the...SHAMBAT et al.: ELECTRICALLY DRIVEN PHOTONIC CRYSTAL NANOCAVITY DEVICES 1707 Fig. 13. (a) Tilted SEM picture of a fabricated triple cavity device. The in

Syntheses of optically efficient (La{sub 1-x-y}Ce{sub x}Tb{sub y})F{sub 3} nanocrystals via a hydrothermal method

Energy Technology Data Exchange (ETDEWEB)

Wang Qiang [Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08544 (United States); You Yumin; Ludescher, Richard D. [Department of Food Science, Rutgers University, New Brunswick, NJ 08901 (United States); Ju Yiguang, E-mail: yju@princeton.ed [Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08544 (United States)

2010-06-15

Optically efficient cerium and terbium doped lanthanide fluoride (La{sub 1-x-y}Ce{sub x}Tb{sub y})F{sub 3} nanocrystals with different doping concentrations have been synthesized by a hydrothermal route in the presence of ethylenediamine tetraacetic acid disodium salt (EDTA). The results showed that the formation of nanocrystals with different morphologies depends on terbium ion Tb{sup 3+} doping concentration, but independent of cerium ion Ce{sup 3+} doping concentration. With increase in Tb{sup 3+} doping concentration, the morphologies of nanocrystals evolved from a spherical shape to a plated-like one. In addition, both the photoluminescence quantum yield (PL QY) and the fluorescence lifetime of nanocrystals increased with the increase in Ce{sup 3+} doping concentration in cerium and terbium co-doped system. The PL QY reached up to 55%, and the lifetime up to 7.3 ms. Transmission electron microscopy (TEM), X-ray diffraction (XRD), selected area electron diffraction (SAED), X-ray fluorescence (XRF), energy dispersive spectroscopy (EDS), ultraviolet-visible (UV-vis) absorption, photoluminescence (PL) and infrared (IR) spectroscopies were employed to characterize the properties of nanocrystals. The growth mechanism of nanocrystals with different morphologies and optical properties of nanocrystals with different doping concentrations were investigated.

Indium Arsenide Nanowires

DEFF Research Database (Denmark)

Madsen, Morten Hannibal

-ray diffraction. InAs NWs can be used in a broad range of applications, including detectors, high speed electronics and low temperature transport measurements, but in this thesis focus will be put on biological experiments on living cells. Good control of Au-assisted InAs NW growth has been achieved......This thesis is about growth of Au-assisted and self-assisted InAs nanowires (NWs). The wires are synthesized using a solid source molecular beam epitaxy (MBE) system and characterized with several techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x...... by a systematic study to optimize the growth conditions; first the Au deposition, then the growth temperature and finally the beam fluxes. For further control of the growth, Au droplets have been positioned with electron beam lithography and large scale arrays with a > 99 % yield have been made on 2 inch...

Enhancing Sm{sup 3+} red emission via energy transfer from Bi{sup 3+}→Sm{sup 3+} based on terbium bridge mechanism in Ca{sub 2}Al{sub 2}SiO{sub 7} phosphors

Energy Technology Data Exchange (ETDEWEB)

Li, Minhong; Wang, LiLi; Ran, Weiguang; Ren, Chunyan; Song, Zeling; Shi, Jinsheng, E-mail: jsshiqn@aliyun.com

2017-04-15

Currently, the key change for white-LED is to improve the luminescence efficiency of red phosphor. Sm{sup 3+} activated phosphor was considered due to suitable emission position of red light. However, the luminescence intensity in the red region is weak. For enhancing red-emitting of Sm{sup 3+}, Bi{sup 3+} and Tb{sup 3+} ions were introduced into Ca{sub 2}Al{sub 2}SiO{sub 7}:Sm{sup 3+} phosphors based on the concept of energy transfer. For Ca{sub 2}Al{sub 2}SiO{sub 7}:Bi{sup 3+}, Sm{sup 3+} samples, it can be observed that the energy transfer process was blocked. Hence, Tb{sup 3+} was introduced into Ca{sub 2}Al{sub 2}SiO{sub 7}:Bi{sup 3+}, Sm{sup 3+} samples to increase Sm{sup 3+} luminescence intensity based on Bi{sup 3+}→Tb{sup 3+}→Sm{sup 3+} energy transfer process. Compared with Sm{sup 3+} single-doped Ca{sub 2}Al{sub 2}SiO{sub 7} phosphor, the luminescence intensity of Sm{sup 3+} was enhanced by 2.6 times. It can be found that Tb{sup 3+} ions play a role of storing the energy or transfer bridge from Bi{sup 3+}→ Sm{sup 3+} by investigating the Ca{sub 2}Al{sub 2}SiO{sub 7}:Bi{sup 3+}, Tb{sup 3+} and Ca{sub 2}Al{sub 2}SiO{sub 7}:Tb{sup 3+}, Sm{sup 3+} energy transfer mechanism. All these results suggest that terbium branch mechanism plays an important role on enhancing activators luminescence intensity.

Polarization developments

International Nuclear Information System (INIS)

Prescott, C.Y.

1993-07-01

Recent developments in laser-driven photoemission sources of polarized electrons have made prospects for highly polarized electron beams in a future linear collider very promising. This talk discusses the experiences with the SLC polarized electron source, the recent progress with research into gallium arsenide and strained gallium arsenide as a photocathode material, and the suitability of these cathode materials for a future linear collider based on the parameters of the several linear collider designs that exist

Structure and luminescence spectra of lutetium and yttrium borates synthesized from ammonium nitrate melt

International Nuclear Information System (INIS)

Klassen, Nikolay V.; Shmurak, Semion Z.; Shmyt'ko, Ivan M.; Strukova, Galina K.; Derenzo, Stephen E.; Weber, Marvin J.

2005-01-01

Lutetium and yttrium borates doped with europium, terbium, gadolinium, etc. have been synthesized by dissolving initial oxides and nitrates in ammonium nitrate melt and thermal decomposition of the solvent. Annealings in the range of 500-1100 deg. C modified the dimensions of the grains from 2 to 3 nm to more than 100 nm. Significant dependence of the structure of lutetium borate on slight doping with rare earth ions has been found: terbium makes high-temperature vaterite phase preferential at room temperature, whereas europium stabilizes low-temperature calcite phase. Influence of the structure of the borates on the pattern of the luminescence spectra of europium dopant was observed. Possibilities for manufacturing of scintillating lutetium borate ceramics by means of this method of synthesis are discussed

Structure and luminescence spectra of lutetium and yttrium borates synthesized from ammonium nitrate melt

Science.gov (United States)

Klassen, Nikolay V.; Shmurak, Semion Z.; Shmyt'ko, Ivan M.; Strukova, Galina K.; Derenzo, Stephen E.; Weber, Marvin J.

2005-01-01

Lutetium and yttrium borates doped with europium, terbium, gadolinium, etc. have been synthesized by dissolving initial oxides and nitrates in ammonium nitrate melt and thermal decomposition of the solvent. Annealings in the range of 500-1100°C modified the dimensions of the grains from 2 to 3 nm to more than 100 nm. Significant dependence of the structure of lutetium borate on slight doping with rare earth ions has been found: terbium makes high-temperature vaterite phase preferential at room temperature, whereas europium stabilizes low-temperature calcite phase. Influence of the structure of the borates on the pattern of the luminescence spectra of europium dopant was observed. Possibilities for manufacturing of scintillating lutetium borate ceramics by means of this method of synthesis are discussed.

Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni5−xAs2 (x = 0.25), from the Bon Accord oxide body, South Africa

International Nuclear Information System (INIS)

Bindi, Luca; Tredoux, Marian; Zaccarini, Federica; Miller, Duncan E.; Garuti, Giorgio

2014-01-01

Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni 5−x As 2 (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P6 3 mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å 3 . The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd 5 Sb 2 structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni 4.75 (As 1.93 Fe 0.05 Sb 0.02 ). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral

Structural phase transition and elastic properties of AnAs (An= Th, U, Np, Pu) compounds at high pressure

International Nuclear Information System (INIS)

Aynyas, Mahendra; Arya, B.S.; Srivastava, Vipul; Sanyal, Sankar P.

2006-01-01

The high pressure behavior and pressure induced structural phase transition of mono arsenides (AnAs; An = Th, U, Np, Pu) have been investigated by using a three body interaction potential (TBI). This method has been found quite satisfactory in the case of other Rare-Earth compounds. The calculated compression curves of mono-arsenides obtained so have been compared with high pressure X-ray diffraction work. The theoretically predicted phase transition pressure and other structural properties for these compounds agree reasonably well with the measured values. (author)

Hyperfine interactions measured by nuclear orientation technique

International Nuclear Information System (INIS)

Brenier, R.

1982-01-01

This report concerns the use of hyperfine interaction to magnetism measurements and to the determination of the nuclear structure of Terbium isotopes by the low temperature nuclear orientation technique. In the first part we show that the rhodium atom does not support any localized moment in the chromium matrix. The hyperfine magnetic field at the rhodium nuclear site follows the Overhauser distribution, and the external applied magnetic field supports a negative Knight shift of 16%. In the second part we consider the structure of neutron deficient Terbium isotopes. We introduce a coherent way of evaluation and elaborate a new nuclear thermometer. The magnetic moments allows to strike on the studied states configuration. The analysis of our results shows a decrease of the nuclear deformation for the lighter isotopes [fr

Determination of trace elements in electronic materials by NAA

International Nuclear Information System (INIS)

Kobayashi, Kenji

1986-01-01

Trace amounts of elements in electronic materials were determined by instrumental neutron activation analysis (INAA), re-activation analysis and substoichiometric radioactivation analysis using gamma-ray spectrometry. Ten elements (Cr, Cu, Fe, Zn, Co, Eu, Ir, Sb, Sc, Tb) in gallium arsenide single crystal were determined by INAA and substoichiometric radioactivation analysis. Trace level of chromium (10 13 atoms/cm 3 ) and zinc (10 14 atoms/cm 3 ) in gallium arsenide single crystal were determined by INAA. The chromium concentrations in horizontal Bridgmangrown semi-insulating gallium arsenide ingot were ranged from 1.2 x 10 16 atoms/cm 3 at seed end to 3.5 x 10 16 atoms/cm 3 at tail end. The trace determinations of iron (10 14 atoms/cm 3 ) and copper (10 14 atoms/cm 3 ) in silicon, gallium arsenide and indium phoshide single crystals were carried out by substoichiometric radioactivation analysis. The reactivation analysis for the multielement determination of indium phosphide single crystal was carried out and nineteen elements were determined simultaneously by gamma-ray spectrometry. Eleven elements (Ag, As, Br, Co, Cr, Fe, K, Mn, Sb, Sc, Zn) in four NIES standard reference materials (Pond Sediment, Chlorella, Mussel and Tea Leaves) and seven elements (Co, Cr, Eu, Fe, Sc, Tb, Yb) in two NBS glasses (SRM-615 and SRM-613) were determined by INAA and substoichiometric radioactivation analysis and the analytical results obtained by the methods were in good agreement with certified values by NIES and NBS. (author)

Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

Science.gov (United States)

1984-01-01

Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

Semiconducting III-V compounds

CERN Document Server

Hilsum, C; Henisch, Heinz R

1961-01-01

Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni{sub 5−x}As{sub 2} (x = 0.25), from the Bon Accord oxide body, South Africa

Energy Technology Data Exchange (ETDEWEB)

Bindi, Luca, E-mail: luca.bindi@unifi.it [Dipartimento di Scienze della Terra, Università degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Tredoux, Marian [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Zaccarini, Federica [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria); Miller, Duncan E. [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Garuti, Giorgio [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria)

2014-07-15

Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni{sub 5−x}As{sub 2} (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P6{sub 3}mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å{sup 3}. The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd{sub 5}Sb{sub 2} structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni{sub 4.75}(As{sub 1.93}Fe{sub 0.05}Sb{sub 0.02}). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral.

Neutron and X-ray small angle scattering (S.A.S.) study of the amorphous alloy Tbsub(.25)Cusub(.75)

International Nuclear Information System (INIS)

Boucher, B.

1980-07-01

The magnetic properties of amorphous alloys REsub(x) Msub(x-1) (R.E.=heavy rare earths, M=Cu, Ag, Au) have been widely studied. They are of the speromagnetic type for x>=0.33 and are mictomagnetic for x -12 cm). Also the atomic volume of Terbium (approximately 33 A 3 ) is almost three times that of Copper (11.8 A 3 ) and Cu is less absorbant than Ag or Au. Tb alloys exhibit high magnetic ordering temperatures and important moments in contrast to the majority of other alloys of the same family. One inconvenience with Terbium, however, is the large (X-ray) fluorescence (lambda Cu). In order to confirm some interpretations of S.A.S., we were obliged to determine some physical parameters such as the density and porosity and to examine the sample with microscope. These results are also given here

Luminescent properties of Al{sub 2}O{sub 3}: Tb powders; Propiedades luminiscentes de polvos de Al{sub 2}O{sub 3}: Tb

Energy Technology Data Exchange (ETDEWEB)

Esparza G, A.E.; Garcia, M.; Falcony, C.; Azorin N, J. [CICATA-IPN, Legaria 694, Col. Irrigacion, 11500 Mexico D.F. (Mexico)

2000-07-01

In this work the photo luminescent and cathode luminescent characteristics of aluminium oxide (Al{sub 2}O{sub 3}) powders impurified with terbium (Tb) were studied for their use in dosimetry. The optical, structural, morphological characteristics of the powders as function of variation in the impurity concentration and the annealing temperature will be presented. As regards the optical properties of powders (photoluminescence and cathode luminescence) it was observed a characteristic emission associated with radiative transitions between electron energy levels of terbium, the spectra associated with this emission consists of several peaks associated with such transitions. In the structural and morphological characterization (X-ray diffraction and scanning electron microscopy) it was appreciated that in accordance the annealing temperature of powders is augmented it is evident the apparition of certain crystalline phases. The results show that this is a promissory material for radiation dosimetry. (Author)

Luminescent properties of Al2O3: Tb powders

International Nuclear Information System (INIS)

Esparza G, A.E.; Garcia, M.; Falcony, C.; Azorin N, J.

2000-01-01

In this work the photo luminescent and cathode luminescent characteristics of aluminium oxide (Al 2 O 3 ) powders impurified with terbium (Tb) were studied for their use in dosimetry. The optical, structural, morphological characteristics of the powders as function of variation in the impurity concentration and the annealing temperature will be presented. As regards the optical properties of powders (photoluminescence and cathode luminescence) it was observed a characteristic emission associated with radiative transitions between electron energy levels of terbium, the spectra associated with this emission consists of several peaks associated with such transitions. In the structural and morphological characterization (X-ray diffraction and scanning electron microscopy) it was appreciated that in accordance the annealing temperature of powders is augmented it is evident the apparition of certain crystalline phases. The results show that this is a promissory material for radiation dosimetry. (Author)

Are LOD and LOQ Reliable Parameters for Sensitivity Evaluation of Spectroscopic Methods?

Science.gov (United States)

Ershadi, Saba; Shayanfar, Ali

2018-03-22

The limit of detection (LOD) and the limit of quantification (LOQ) are common parameters to assess the sensitivity of analytical methods. In this study, the LOD and LOQ of previously reported terbium sensitized analysis methods were calculated by different methods, and the results were compared with sensitivity parameters [lower limit of quantification (LLOQ)] of U.S. Food and Drug Administration guidelines. The details of the calibration curve and standard deviation of blank samples of three different terbium-sensitized luminescence methods for the quantification of mycophenolic acid, enrofloxacin, and silibinin were used for the calculation of LOD and LOQ. A comparison of LOD and LOQ values calculated by various methods and LLOQ shows a considerable difference. The significant difference of the calculated LOD and LOQ with various methods and LLOQ should be considered in the sensitivity evaluation of spectroscopic methods.

On possibility of transuranium element by the method of transport reactions

International Nuclear Information System (INIS)

Sinitsyna, G.S.; Krashenitsyn, G.N.; Shestakov, B.I.

1983-01-01

A possibility to use chemical transport reaction for separation of uranium, plutonium and some transplutonium elements is shown. The method is based on the use of the known plutonium property to form tetrachloride existing only in the gaseous phase in chlorine atmosphere, which is transported ever the temperature gradiept. Two ways of transport reaction realization - the method of flow and the method of diffusion in closed volume are tested. The experiments are made using specially synthesized plutonium dioxide, containing uranium, americium, curium, lanthanum, terbium, barium. Chlorination is realized by the mixture of chlorine and carbon tetrachloride at temperatures 723-953 K. Plutonium trichloride is deposited in the range 613-653 K, uranium - in the range 473-523 K, curium, americium, lanthanum, terbium, barium remain in the start zone if its temperature does not exceed 873 K

Radio-luminescence efficiency and rare-earth dispersion in Tb-doped silica glasses

Czech Academy of Sciences Publication Activity Database

Fasoli, M.; Moretti, F.; Lauria, A.; Chiodini, N.; Vedda, A.; Nikl, Martin

2007-01-01

Roč. 42, - (2007), s. 784-787 ISSN 1350-4487 Institutional research plan: CEZ:AV0Z10100521 Keywords : sol-gel * scintillators * silica * rare earths * terbium Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.054, year: 2007

Gallium arsenide injection lasers

International Nuclear Information System (INIS)

Thompson, G.H.B.

1975-01-01

The semiconductor injection laser includes a thin inner GaAs p-n junction layer between two outer GaAlAs layers which are backed by further thin outer GaAlAs layers with a heavier doping of AlAs. This reduces optical losses. Optical energy is further confined within the inner layers and the lasing threshold reduced by added outer GaAs layers of low electrical and thermal resistivity

Performance of 20 Ci 137Cs γ-ray Compton spectrometer for the ...

Indian Academy of Sciences (India)

of the machine is assessed using aluminum, terbium and mercury samples and the exper- imental data from ... keV) are used. This is particularly true in the case of heavy elements ... In this paper, a design with optimum choice of experimental.

Ion implantation in semiconductor bodies

International Nuclear Information System (INIS)

Badawi, M.H.

1984-01-01

Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

Coherent light scattering from a buried dipole in a high-aperture optical system

International Nuclear Information System (INIS)

Vamivakas, A N; Mueller, T; Atatuere, M; Yurt, A; Koeklue, F H; Uenlue, M S

2011-01-01

We develop a theoretical formulation to calculate the absolute and differential transmission of a focused laser beam through a high-aperture optical system. The focused field interacts with a point dipole that is buried in a high-index material, and is situated at the Gaussian focus of the focusing and collection two-lens system. The derived expressions account for the vectorial nature of the focused electromagnetic field and the inhomogeneous focal region environment. The results obtained are in agreement with recent resonant light-scattering experiments where the buried emitter is an indium arsenide semiconductor quantum dot in gallium arsenide.

The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

Science.gov (United States)

Curtis, H. B.; Hart, R. E., Jr.

1982-01-01

Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

STANFORD: Highly polarized SLC electron beams

International Nuclear Information System (INIS)

Anon.

1993-01-01

Full text: Using specialized photocathodes made with 'strained' gallium arsenide, physicists at the Stanford Linear Accelerator Center (SLAC) have generated electron beams with polarizations in excess of 60 percent a year ahead of schedule. Together with recent luminosity increases, this breakthrough will have a major impact on the physics output of the Stanford Linear Collider (SLC). Beam polarization was almost tripled using photocathodes in which a gallium arsenide layer was grown epitaxially over a substrate of gallium arsenide phosphide. The mismatch between these two layers deforms the crystal structure and removes a degeneracy in the valence band structure, permitting selective optical pumping of one unique spin state. Whereas conventional gallium arsenide photocathodes are limited to 50 percent polarization because of this degeneracy (and realistic cathodes fall substantially below this theoretical limit), such strained crystal lattices have the potential to yield polarizations close to 100 percent. Polarization enhancement with strained lattices was first demonstrated in 1991 by a SLAC/Wisconsin/ Berkeley group (May 1991, page 6) with a 71 percent polarization in a laboratory experiment. More recently this group has achieved polarization in excess of 90 percent, reported last November at the Nagoya Spin Symposium. (In a complementary development, a Japanese KEK/ Nagoya/KEK obtains polarized beams using a 'superlattice' - May 1991, page 4.) The 1993 SLC run, the strained gallium arsenide photocathode technique's debut in an operating particle accelerator, has proved to be a resounding, unqualified success - as have physics experiments on the Z particles produced by the highly polarized beam. A conservative approach was called for, due to concerns about possible charge saturation effects. A relatively thick (0.3 micron) gallium arsenide layer was used for the photocathode in the SLC polarized electron source. With a titanium

Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

International Nuclear Information System (INIS)

Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

1975-01-01

Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

Science.gov (United States)

Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

2017-12-01

Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

The temperature dependence of thermooptical properties of magnetooptical TAG ceramics doped with silicon and titanium

Science.gov (United States)

Starobor, Aleksey; Palashov, Oleg

2018-04-01

Thermal effects in terbium aluminum garnet (TAG) ceramics (thermal lens and thermally induced depolarization) doped with silicon and titanium were investigated in temperature range of 79-293K. Samples with low dopant concentrations shows decreasing of negative thermal effects with cooling to 79 K. However for most part of samples thermal depolarization starts increasing after initial decreasing with cooling. Apparently it is connected with defects in media. Best sample (0.4 at% of Si) as pure TAG shows monotonous decreasing of thermally induced depolarization and 3.5 times Verdet constant increasing with cooling to 79 K, that leads to 1.8-times advantage over common magnetooptical media - terbium gallium garnet. It allows to provide an isolation of 30 dB at a radiation power of more than 6 kW as estimated. However, the procedure for creating ceramics samples obviously needs improvement because of the large scatter in the quality of the samples.

Cerium fluoride nanoparticles protect cells against oxidative stress

International Nuclear Information System (INIS)

Shcherbakov, Alexander B.; Zholobak, Nadezhda M.; Baranchikov, Alexander E.; Ryabova, Anastasia V.; Ivanov, Vladimir K.

2015-01-01

A novel facile method of non-doped and fluorescent terbium-doped cerium fluoride stable aqueous sols synthesis is proposed. Intense green luminescence of CeF 3 :Tb nanoparticles can be used to visualize these nanoparticles' accumulation in cells using confocal laser scanning microscopy. Cerium fluoride nanoparticles are shown for the first time to protect both organic molecules and living cells from the oxidative action of hydrogen peroxide. Both non-doped and terbium-doped CeF 3 nanoparticles are shown to provide noteworthy protection to cells against the vesicular stomatitis virus. - Highlights: • Facile method of CeF 3 and CeF 3 :Tb stable aqueous sols synthesis is proposed. • Naked CeF 3 nanoparticles are shown to be non-toxic and to protect cells from the action of H 2 O 2 . • CeF 3 and CeF 3 :Tb nanoparticles are shown to protect living cells against the vesicular stomatitis virus

The use of rare earth radiotracers in the study of solvent extraction kinetics

International Nuclear Information System (INIS)

Lim, T.M.; Tran, T.

1993-01-01

The suitability of rare earth radionuclides as tracers in research and industry are assessed. In general, the most desirable characteristics of radiotracers for process studies are a half-life in the range 5-200 days, a high yield, high energy γ-emission and low cost of production. The majority of rare earths have at least one radionuclide with acceptable characteristics. The application of radiotracers to the study of kinetics of rare earth solvent extraction have been studied using a modified Lewis cell. Terbium-160 was selected as the most suitable rare earth radionuclide for our experiments. Samples of both aqueous and organic phases were continuous withdrawn, monitored using an automated γ-counting system based on two sodium iodide detectors and then pumped back to the Lewis cell. Excellent results were obtained and the rate of extraction was shown to be first order with respect to the terbium concentration. 6 refs., 1 tab., 7 figs

Lyoluminescence sensitisation

International Nuclear Information System (INIS)

Galand, E.; Niezette, J.; Vanderschueren, J.

1993-01-01

Lyoluminescence (LL) of several carbohydrates and amino acids has been measured in water for a γ dose of respectively, 20 Gy and 50 Gy. It has been demonstrated that the LL yield depends markedly not only on the nature of the LL material but also on its commercial origin. By using solutions of organic dyes such as eosin B, rhodamine B or fluorescein, a substantial enhancement of LL has been observed with carbohydrates. Concentration effect has been investigated and maximum LL yields have been observed in the range 10 -5 -10 -4 mol. On the other hand, LL of amino acids has been increased by the use of rare earth ion solutions. Dysprosium, europium and terbium solutions have been used, but it has been proved that terbium nitrate is the most appropriate solution. Concentration effect has been studied for several amino acids and dosimetric response of glutamine has been investigated with different rare earth ions solutions. (Author)

Cerium fluoride nanoparticles protect cells against oxidative stress

Energy Technology Data Exchange (ETDEWEB)

Shcherbakov, Alexander B.; Zholobak, Nadezhda M. [Zabolotny Institute of Microbiology and Virology, National Academy of Sciences of Ukraine, Kyiv D0368 (Ukraine); Baranchikov, Alexander E. [Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Ryabova, Anastasia V. [Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow 115409 (Russian Federation); Ivanov, Vladimir K., E-mail: van@igic.ras.ru [Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); National Research Tomsk State University, Tomsk 634050 (Russian Federation)

2015-05-01

A novel facile method of non-doped and fluorescent terbium-doped cerium fluoride stable aqueous sols synthesis is proposed. Intense green luminescence of CeF{sub 3}:Tb nanoparticles can be used to visualize these nanoparticles' accumulation in cells using confocal laser scanning microscopy. Cerium fluoride nanoparticles are shown for the first time to protect both organic molecules and living cells from the oxidative action of hydrogen peroxide. Both non-doped and terbium-doped CeF{sub 3} nanoparticles are shown to provide noteworthy protection to cells against the vesicular stomatitis virus. - Highlights: • Facile method of CeF{sub 3} and CeF{sub 3}:Tb stable aqueous sols synthesis is proposed. • Naked CeF{sub 3} nanoparticles are shown to be non-toxic and to protect cells from the action of H{sub 2}O{sub 2}. • CeF{sub 3} and CeF{sub 3}:Tb nanoparticles are shown to protect living cells against the vesicular stomatitis virus.

Characterizing and engineering tunable spin functionality inside indium arsenide/gallium arsenide quantum dot molecules

Science.gov (United States)

Liu, Weiwen

The continual downsizing of the basic functional units used in the electronics industry has motivated the study of the quantum computation and related topics. To overcome the limitations of classical physics and engineering, some unique quantum mechanical features, especially entanglement and superpositions have begun to be considered as important properties for future bits. Including these quantum mechanical features is attractive because the ability to utilize quantum mechanics can dramatically enhance computational power. Among the various ways of constructing the basic building blocks for quantum computation, we are particularly interested in using spins inside epitaxially grown InAs/GaAs quantum dot molecules as quantum bits (qubits). The ability to design and engineer nanostructures with tailored quantum properties is critical to engineering quantum computers and other novel electro-optical devices and is one of the key challenges for scaling up new ideas for device application. In this thesis, we will focus on how the structure and composition of quantum dot molecules can be used to control spin properties and charge interactions. Tunable spin and charge properties can enable new, more scalable, methods of initializing and manipulating quantum information. In this thesis, we demonstrate one method to enable electric-field tunability of Zeeman splitting for a single electron spin inside a quantum dot molecules by using heterostructure engineering techniques to modify the barrier that separates quantum dots. We describe how these structural changes to the quantum dot molecules also change charge interactions and propose ways to use this effect to enable accurate measurement of coulomb interactions and possibly charge occupancy inside these complicated quantum dot molecules.

Tuning the activity of Pt alloy electrocatalysts by means of the lanthanide contraction

DEFF Research Database (Denmark)

Escribano, Maria Escudero; Malacrida, Paolo; Hansen, Martin Hangaard

2016-01-01

is lanthanum, cerium, samarium, gadolinium, terbium, dysprosium, thulium, or calcium. The materials are among the most active polycrystalline Pt-based catalysts reported, presenting activity enhancement by a factor of 3 to 6 over Pt. The active phase consists of a Pt overlayer formed by acid leaching. The ORR...

Spin-glass transition in disordered terbium

International Nuclear Information System (INIS)

Hauser, J.J.

1985-01-01

While crystalline Tb is a helix antiferromagnet with a Neel temperature of 229 K which becomes ferromagnetic at 222 K, disordered Tb exhibits a spin-glass transition. The spin-glass freezing temperature ranges from 183 to 53 K, the lowest temperatures corresponding to the greatest degree of atomic disorder. These experiments constitute the first evidence for an elemental spin-glass. (author)

Spectroscopic analysis of lithium terbium tetrafluoride

DEFF Research Database (Denmark)

Christensen, H.P.

1978-01-01

The absorption spectra of Tb3+ in LiTbF4 have been recorded in the spectral interval from 4000 to 25000 cm-1 and for temperatures between 2.3 and 150 K. This covers the transitions from the ground multiplet 7F6 to the multiplets 7F3, 7F2, 7F1, 7F0, and 5D4. The transitions were predominantly of e...

Accurate determination of light elements by charged particle activation analysis

International Nuclear Information System (INIS)

Shikano, K.; Shigematsu, T.

1989-01-01

To develop accurate determination of light elements by CPAA, accurate and practical standardization methods and uniform chemical etching are studied based on determination of carbon in gallium arsenide using the 12 C(d,n) 13 N reaction and the following results are obtained: (1)Average stopping power method with thick target yield is useful as an accurate and practical standardization method. (2)Front surface of sample has to be etched for accurate estimate of incident energy. (3)CPAA is utilized for calibration of light element analysis by physical method. (4)Calibration factor of carbon analysis in gallium arsenide using the IR method is determined to be (9.2±0.3) x 10 15 cm -1 . (author)

Solar-Electrochemical Power System for a Mars Mission

Science.gov (United States)

Withrow, Colleen A.; Morales, Nelson

1994-01-01

This report documents a sizing study of a variety of solar electrochemical power systems for the intercenter NASA study known as 'Mars Exploration Reference Mission'. Power systems are characterized for a variety of rovers, habitation modules, and space transport vehicles based on requirements derived from the reference mission. The mission features a six-person crew living on Mars for 500 days. Mission power requirements range from 4 kWe to 120 kWe. Primary hydrogen and oxygen fuel cells, regenerative hydrogen and oxygen fuel cells, sodium sulfur batteries advanced photovoltaic solar arrays of gallium arsenide on germanium with tracking and nontracking mechanisms, and tent solar arrays of gallium arsenide on germanium are evaluated and compared.

Geology and mineralogy of the Cu-Ni-Co-U ore deposits at Talmessi and Meskani, Central Iran

International Nuclear Information System (INIS)

Tarkian, M.; Bock, W.D.; Neumann, M.

1983-01-01

Polymetallic hydrothermal veins and impregnations carry copper-iron sulphides (bornite, chalcopyrite, digenite, chalcocite) and nickel-cobalt arsenides (niccolite, rammelsbergite, safflorite, skutterudite) with bismuth and uranium as well as some copper arsenides (domeykite, koutekite etc.) in two dormant mines in the Anarak District. The geological and tectonic framework and the mineral associations of both occurrences have been investigated in detail. Both mineralization can be attributed to Tertiary magmatism, but were deposited in two temporally distinct periods. The older copper sulphide minerealization is structurally controlled by pre-middle Eocene tectronics and is linked to Eocene shoshonitic volcanism. The second, younger nickel-cobalt-silver-bismuth-uranium mineralization might be attributed to a granitic magmatism linked to a Miocene phase of movement. (Authors)

Circuit quantum electrodynamics with a spin qubit.

Science.gov (United States)

Petersson, K D; McFaul, L W; Schroer, M D; Jung, M; Taylor, J M; Houck, A A; Petta, J R

2012-10-18

Electron spins trapped in quantum dots have been proposed as basic building blocks of a future quantum processor. Although fast, 180-picosecond, two-quantum-bit (two-qubit) operations can be realized using nearest-neighbour exchange coupling, a scalable, spin-based quantum computing architecture will almost certainly require long-range qubit interactions. Circuit quantum electrodynamics (cQED) allows spatially separated superconducting qubits to interact via a superconducting microwave cavity that acts as a 'quantum bus', making possible two-qubit entanglement and the implementation of simple quantum algorithms. Here we combine the cQED architecture with spin qubits by coupling an indium arsenide nanowire double quantum dot to a superconducting cavity. The architecture allows us to achieve a charge-cavity coupling rate of about 30 megahertz, consistent with coupling rates obtained in gallium arsenide quantum dots. Furthermore, the strong spin-orbit interaction of indium arsenide allows us to drive spin rotations electrically with a local gate electrode, and the charge-cavity interaction provides a measurement of the resulting spin dynamics. Our results demonstrate how the cQED architecture can be used as a sensitive probe of single-spin physics and that a spin-cavity coupling rate of about one megahertz is feasible, presenting the possibility of long-range spin coupling via superconducting microwave cavities.

Untitled

Indian Academy of Sciences (India)

Recently there has been a spurt in studies on heavy rare earth metals because of the magnon-phonon interactions observed in them. The phonon dispersion relations in terbium have been investigated by Houmann and Nicklow (1970) and by Menon and. Rao (1972). The magnon dispersion relations have been measured ...

Rare earth oxyhalogenide base thermoluminescent material

International Nuclear Information System (INIS)

Rabatin, J.G.

1976-01-01

A process is described that consists to expose a thermoluminescent material to ionizing radiations, the material being a rare earth oxyhalogenide with terbium additions, to heat this material up to the emission of visible radiations and to measure the emitted radiations which are proportional to the ionizing radiation dose [fr

NASA-OAST photovoltaic energy conversion program

Science.gov (United States)

Mullin, J. P.; Loria, J. C.

1984-01-01

The NASA program in photovoltaic energy conversion research is discussed. Solar cells, solar arrays, gallium arsenides, space station and spacecraft power supplies, and state of the art devices are discussed.

Inter-granular current in iron-oxypnictide superconductors

International Nuclear Information System (INIS)

Tamegai, T.; Tsuchiya, Y.; Nakajima, Y.; Kamihara, Y.; Hosono, H.

2010-01-01

Inter- and intragranular currents, J c inter and J c intra , in LaFePO 0.94 F 0.06 polycrystalline sample are evaluated by measuring the remanent-state field profile using magneto-optical imaging method. Obtained images show the absence of magnetic field modulation associated with the weak-link nature of grain boundaries, indicating that J c inter and J c intra are comparable in magnitude in contrast to other iron-arsenide superconductors. J c inter is estimated to be 2 x 10 4 A/cm 2 in the limit of T = 0 K, which is larger than the values in other iron-arsenide superconductors. Implication of these J c behavior is discussed in relation with possible pairing symmetries.

Viscosity measurements of molten refractory metals using an electrostatic levitator

International Nuclear Information System (INIS)

Ishikawa, Takehiko; Paradis, Paul-François; Okada, Junpei T; Watanabe, Yuki

2012-01-01

Viscosities of several refractory metals (titanium, nickel, zirconium, niobium, ruthenium, rhodium, hafnium, iridium and platinum) and terbium have been measured by the oscillation drop method with an improved procedure. The measured data were less scattered than our previous measurements. Viscosities at their melting temperatures showed good agreement with literature values and some predicted values. (paper)

Structural Characterization and Absolute Luminescence Efficiency Evaluation of Gd2O2S High Packing Density Ceramic Screens Doped with Tb3+ and Eu3+ for further Applications in Radiology

Science.gov (United States)

Dezi, Anna; Monachesi, Elenasophie; D'Ignazio, Michela; Scalise, Lorenzo; Montalto, Luigi; Paone, Nicola; Rinaldi, Daniele; Mengucci, Paolo; Loudos, George; Bakas, Athanasios; Michail, Christos; Valais, Ioannis; Fountzoula, Christine; Fountos, George; David, Stratos

2017-11-01

Rare earth activators are impurities added in the phosphor material to enhance probability of visible photon emission during the luminescence process. The main activators employed are rare earth trivalent ions such as Ce+3, Tb+3, Pr3+ and Eu+3. In this work, four terbium-activated Gd2O2S (GOS) powder screens with different thicknesses (1049 mg/cm2, 425.41 mg/cm2, 313 mg/cm2 and 187.36 mg/cm2) and one europium-activated GOS powder screen (232.18 mg/cm2) were studied to investigate possible applications for general radiology detectors. Results presented relevant differences in crystallinity between the GOS:Tb doped screens and GOS:Eu screens in respect to the dopant agent present. The AE (Absolute efficiency) was found to rise (i) with the increase of the X-ray tube voltage with the highest peaking at 110kVp and (ii) with the decrease of the thickness among the four GOS:Tb. Comparing similar thickness values, the europium-activated powder screen showed lower AE than the corresponding terbium-activated.

Heat load of a GaAs photocathode in an SRF electron gun

International Nuclear Information System (INIS)

Wang Erdong; Zhao Kui; Jorg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; Wu Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes

2011-01-01

A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs. (authors)

RF-MMW Dipole Antenna Arrays From Laser Illuminated GaAs

National Research Council Canada - National Science Library

Umphenour, D

1998-01-01

High resistivity photoconductive Gallium Arsenide (GaAs) can be used as elemental Hertzian dipole antenna arrays in which the time varying dipole current is produced by temporally modulating a laser (0.63um...

Magnetic measurements of the transuranium elements. Progress report, January 1, 1984-December 31, 1984

International Nuclear Information System (INIS)

Huray, P.G.; Nave, S.E.

1984-01-01

Measurements of the magnetic properties of dhcp californium-249 metal indicated the presence of three regions of differing magnetic character. Additional measurements are also reported. Magnetic moments and valence states of terbium in TbF 3 , BaTbO 3 , and TbO 1 8 are discussed. Progress on high-field operation of the micro-magnetic susceptometer is reported

Charge Carrier Trapping Processes in RE2O2S (RE = La, Gd, Y, and Lu)

NARCIS (Netherlands)

Luo, H.; Bos, A.J.J.; Dorenbos, P.

2017-01-01

Two different charge carrier trapping processes have been investigated in RE2O2S:Ln3+ (RE = La, Gd, Y, and Lu; Ln = Ce, Pr, and Tb) and RE2O2S:M (M = Ti4+ and Eu3+). Cerium, praseodymium and terbium act as recombination centers and hole trapping centers while host intrinsic defects provide the

Activities of the Solid State Physics Research Institute

Science.gov (United States)

1985-01-01

Topics addressed include: muon spin rotation; annealing problems in gallium arsenides; Hall effect in semiconductors; computerized simulation of radiation damage; single-nucleon removal from Mg-24; and He-3 reaction at 200 and 400 MeV.

Electron transport in erbium arsenide:indium gallium(aluminum)arsenide metal/semiconductor nanocomposites for thermoelectric power generation

Science.gov (United States)

Bahk, Je-Hyeong

Electron transport in thin film ErAs:InGa(Al)As metal/semiconductor nanocomposite materials grown by molecular beam epitaxy is investigated experimentally and theoretically for efficient thermoelectric power generation. Thermoelectric properties such as the Seebeck coefficient, the electrical conductivity, and the thermal conductivity are measured for the various compositions of the material up to 840 K. A special sample preparation method is proposed to protect the thin films from damage and/or decomposition, and prevent the parasitic substrate conduction effect during the high temperature measurements. The sample preparation method includes surface passivation, high temperature metallization with a diffusion barrier, and the covalent oxide bonding technique for substrate removal. The experimental results for the nanocomposite materials are analyzed using the Boltzmann transport equation under the relaxation time approximation. The scattering characteristics of free electrons in the InGa(Al)As is defined by four major scattering mechanisms such as the polar optical phonon scattering, the ionized impurity scattering, the alloy scattering, and the acoustic phonon deformation potential scattering. Combining these scattering mechanisms, the electron transport model successfully fits the temperature-dependent thermoelectric properties of Si-doped InGaAlAs materials, and predicts the figure of merits at various doping levels in various Al compositions. The nanoparticle-electron interaction is modeled as a momentum scattering for free electrons caused by the electrostatic potential perturbation around nanoparticles and the band offset at the interface. The ErAs nanoparticles are assumed to be semi-metals that can donate electrons to the matrix, and positively charged after the charge transfer to build up the screened coulomb potential outside them. The nanoparticle scattering rate is calculated for this potential profile using the partial wave method, and used to analyze the enhancement of the Seebeck coefficient. Finally, the experimental results for the various compositions of the ErAs:InGa(Al)As nanocomposites are fit using the electron transport model and the nanoparticle scattering. It is shown that nanoparticle scattering can enhance the power factor via energy-dependent electron scattering in ErAs:InGaAs system. The figure of merit for the 0.6% ErAs:(InGaAs)0.8(InAlAs) 0.2 lattice matched to InP is measured to be 1.3 at 800 K, and the theory predicts that it can reach 1.9 at 1000 K.

Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

Science.gov (United States)

2016-09-27

it as-grown and it densifies as the H leaves when annealed above approximately 500 °C. This densification causes the film to contract, becoming...tensile. The final deposition recipe shown in the Appendix, Section 2 was found after numerous trials and results in a minimum between compressive...marks b) ULVAC etch: 500 -W ICP, 50-W RIE, 4 mT, 16-sccm BCl3, 4-sccm Ar, 12 s (~50 nm)  GaAs etches at 7.54 nm/s after 6-s etch delay. PR etches at

Coherent magnetic structures in terbium/holmium superlattices

DEFF Research Database (Denmark)

Bryn-Jacobsen, C.; Cowley, R.A.; McMorrow, D.F.

1997-01-01

to 230 K, two samples retain this magnetic structure while the third undergoes a transition first to a mixed phase of helically and ferromagnetically ordered Tb moments, then to a phase with only helically ordered To moments. Ln all cases, the magnetic ordering is found to be long ranged, with coherence...

Magnon energies and exchange interactions in terbium

DEFF Research Database (Denmark)

Houmann, Jens Christian Gylden

1968-01-01

The magnon density of states, and hence the magnetic contribution to the specific heat, and also the exchange interaction between ions in the same sublattice have been calculated for Tb at 90°K, using experimental results obtained by inelastic neutron scattering.......The magnon density of states, and hence the magnetic contribution to the specific heat, and also the exchange interaction between ions in the same sublattice have been calculated for Tb at 90°K, using experimental results obtained by inelastic neutron scattering....

Magnon lifetimes in terbium at low temperatures

International Nuclear Information System (INIS)

Bjerrum Moeller, H.; Mackintosh, A.R.

1979-01-01

The lifetimes of magnons propagating in the c-direction of Tb at 4.2 K have been measured by inelastic neutron scattering. In contrast to the behaviour at higher temperatures, where magnon-magnon scattering predominates, the broadening of the magnons increases towards the boundary of the single Brillouin zone, both in the acoustic and optical branches. This suggests that the scattering of the magnons by conduction electrons is important, and the observed lifetimes are consistent with a recent estimate of the magnitude of this effect. The acoustic magnons of very long wavelength behave anomalously, presumably due to dipolar interactions

Test plan for air monitoring during the Cryogenic Retrieval Demonstration

International Nuclear Information System (INIS)

Yokuda, E.

1992-06-01

This report presents a test plan for air monitoring during the Cryogenic Retrieval Demonstration (CRD). Air monitors will be used to sample for the tracer elements neodymium, terbium, and ytterbium, and dysprosium. The results from this air monitoring will be used to determine if the CRD is successful in controlling dust and minimizing contamination. Procedures and equipment specifications for the test are included

Thermoluminescent coactivated rare earth oxyhalide phosphors and x-ray image converters utilizing said phosphors

International Nuclear Information System (INIS)

Rabatin, J.G.

1984-01-01

Oxyhalides of lanthanum, gadolinium and lutetium coactivated with a first activator selected from bismuth and samarium to provide the color of light emission and a second coactivator (e.g. terbium or praseodymium) which increases the amount of stored energy in a stored radiographic latent image are found to be superior in their conversion efficiency of x-rays to visible light. (author)

Coupled Photonic Crystal Cavity Array Laser

DEFF Research Database (Denmark)

Schubert, Martin

in the quadratic lattice. Processing techniques are developed and optimized in order fabricate photonic crystals membranes in gallium arsenide with quantum dots as gain medium and in indium gallium arsenide phosphide with quantum wells as gain medium. Several key issues in process to ensure good quality....... The results are in good agreement with standard coupled mode theory. Also a novel type of photonic crystal structure is proposed called lambda shifted cavity which is a twodimensional photonic crystal laser analog of a VCSEL laser. Detailed measurements of the coupled modes in the photonic crystals...... with quantum dots are carried out. In agreement with a simple gain model the structures do not show stimulated emission. The spectral splitting due to the coupling between single cavities as well as arrays of cavities is studied theoretically and experimentally. Lasing is observed for photonic crystal cavity...

Metamaterial-Enhanced Nonlinear Terahertz Spectroscopy

Directory of Open Access Journals (Sweden)

Zhang X.

2013-03-01

Full Text Available We demonstrate large nonlinear terahertz responses in the gaps of metamaterial split ring resonators in several materials and use nonlinear THz transmission and THz-pump/THz-probe spectroscopy to study the nonlinear responses and dynamics. We use the field enhancement in the SRR gaps to initiate high-field phenomena at lower incident fields. In vanadium dioxide, we drive the insulator-to-metal phase transition with high-field THz radiation. The film conductivity increases by over two orders of magnitude and the phase transition occurs on a several picosecond timescale. In gallium arsenide, we observe high-field transport phenomena, including mobility saturation and impact ionization. The carrier density increases by up to ten orders of magnitude at high fields. At the highest fields, we demonstrate THz-induced damage in both vanadium dioxide and gallium arsenide.

POLLUTION PREVENTION IN THE SEMICONDUCTOR INDUSTRY THROUGH RECOVERY AND RECYCLING OF GALLIUM AND ARSENIC FROM GAAS POLISHING WASTES

Science.gov (United States)

A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

OM85. Basic Properties of Optical Materials Summaries of Papers.

Science.gov (United States)

1985-05-01

1984. [2] D. Marcuse : IEEE J. QE-14, 736 (1978). 163 ... . . . .. . . .. . . CALORIMETRIC MEASUREMENT OF OPTICAL ABSORPTION IN SAPPHIRE AT VISIBLE...ARSENIDE Herbert S. Bennett Semiconductor Devices and Circuits Division National Bureau of Standards Gaithersburg, MD 20899 Introduction Lasers, opto

Synthesis and characterization of Tin / Titanium mixed oxide nanoparticles doped with lanthanide for biomarking

International Nuclear Information System (INIS)

Paganini, Paula Pinheiro

2012-01-01

This work presents the synthesis, characterization and photo luminescent study of tin and titanium mixed oxide nanoparticles doped with europium, terbium and neodymium to be used with luminescent markers on biological systems. The syntheses were done by co-precipitation, protein sol-gel and Pechini methods and the nanoparticles were characterized by infrared spectroscopy, thermogravimetric analysis, scanning electron microscopy, X-ray diffraction and X-ray absorption spectroscopy. The photo luminescent properties studies were conducted for luminophores doped with europium, terbium and neodymium synthesized by coprecipitation method. For luminophore doped with europium it was possible to calculate the intensity parameters and quantum yield and it showed satisfactory results. In the case of biological system marking it was necessary the functionalization of these particles to allow them to bind to the biological part to be studied. So the nanoparticles were functionalized by microwave and Stöber methods and characterized by infrared spectroscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction obtaining qualitative response of functionalization efficacy. The ninhydrin spectroscopic method was used for quantification of luminophores functionalization. The photo luminescent studies of functionalized particles demonstrate the potential applying of these luminophores as luminescent markers. (author)

Fabrication of Tb3Al5O12 transparent ceramics using co-precipitated nanopowders

Science.gov (United States)

Dai, Jiawei; Pan, Yubai; Wang, Wei; Luo, Wei; Xie, Tengfei; Kou, Huamin; Li, Jiang

2017-11-01

Terbium aluminum garnet (TAG) precursor was synthesized by a co-precipitation method from a mixed solution of terbium and aluminum nitrates using ammonium hydrogen carbonate (AHC) as the precipitant. The powders calcined at different temperatures were investigated by XRD, FTIR and FESEM in order to choose the optimal calcination temperature. Fine and low-agglomerated TAG powders with average particle size of 88 nm were obtained by calcining the precursor at 1100 °C for 4 h. Using this powder as starting material, TAG transparent ceramics were fabricated by vacuum sintering combined with hot isostatic pressing (HIP) sintering. For the sample pre-sintered at 1700 °C for 20 h with HIP post-treated at 1700 °C for 3 h, the average grain size is about 3.9 μm and the in-line transmittance is beyond 55% in the region of 500-1600 nm, reaching a maximum transmittance of 64.2% at the wavelength of 1450 nm. The Verdet constant at 633 nm is measured to be -178.9 rad T-1 m-1, which is 33% larger than that of the commercial TGG single crystal (-134 rad T-1 m-1).

Synthesis and characterization of Tin / Titanium mixed oxide nanoparticles doped with lanthanide for biomarking; Sintese e caracterizacao de nanoparticulas de oxido misto de estanho/titanio dopadas com lantanideos para marcacao biologica

Energy Technology Data Exchange (ETDEWEB)

Paganini, Paula Pinheiro

2012-07-01

This work presents the synthesis, characterization and photo luminescent study of tin and titanium mixed oxide nanoparticles doped with europium, terbium and neodymium to be used with luminescent markers on biological systems. The syntheses were done by co-precipitation, protein sol-gel and Pechini methods and the nanoparticles were characterized by infrared spectroscopy, thermogravimetric analysis, scanning electron microscopy, X-ray diffraction and X-ray absorption spectroscopy. The photo luminescent properties studies were conducted for luminophores doped with europium, terbium and neodymium synthesized by coprecipitation method. For luminophore doped with europium it was possible to calculate the intensity parameters and quantum yield and it showed satisfactory results. In the case of biological system marking it was necessary the functionalization of these particles to allow them to bind to the biological part to be studied. So the nanoparticles were functionalized by microwave and Stoeber methods and characterized by infrared spectroscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction obtaining qualitative response of functionalization efficacy. The ninhydrin spectroscopic method was used for quantification of luminophores functionalization. The photo luminescent studies of functionalized particles demonstrate the potential applying of these luminophores as luminescent markers. (author)

Face to Face The IGBT and its Creator

Indian Academy of Sciences (India)

IAS Admin

HC: At RPI you had the chance to work on Indium Gallium Arsenide (InGaAs) ..... Safe operating area denotes the current and voltage conditions under which ... conditioning, refrigeration and so on, but what is the impact on the environment?

Suitability of integrated protection diodes from diverse semiconductor technologies

NARCIS (Netherlands)

van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

2009-01-01

Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

Modulation of fluorescence signals from biomolecules along nanowires due to interaction of light with oriented nanostructures

DEFF Research Database (Denmark)

Frederiksen, Rune Schøneberg; Alarcon-Llado, Esther; Madsen, Morten H.

2015-01-01

High aspect ratio nanostructures have gained increasing interest as highly sensitive platforms for biosensing. Here, well-defined biofunctionalized vertical indium arsenide nanowires are used to map the interaction of light with nanowires depending on their orientation and the excitation waveleng...

Configurational rearrangements of bistable centers in covalent semiconductors - phase transitions of the second type

International Nuclear Information System (INIS)

Ivanyukovich, V.A.; Karas', V.I.; Lomako, V.M.

1989-01-01

A new radiation configurational-bistable defect diffring from the known similar defects by the fact that it possessestemperature inversion of states is detected in gallium arsenide. Configurational-bistable rearrangements are shown to be considered as phase transitions of the second type

Neutron transmutation doping of gallium arsenide

International Nuclear Information System (INIS)

Alexiev, D.

1987-12-01

Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm 3 per cm 2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated

Gallium Arsenide and Related Compounds, 1986.

Science.gov (United States)

1986-01-01

F-Yiuang, WL,, PK Rhattacharva, UDas, A Chin , IJlackson and D L Persechini 417 -422 High quality lattice matched lnGaAs/InP heterostructures prepared...Sci. Technol. B3 1162. Schwartz G. P. 1983 Thin solid Films 103 3. Spicer W. E., Lindau I., Skeath P. R., Su C Y. and Chye P. W. 19R0 Phys. Rev. Lett... Chin R, Nakano K, and Milano R A 1981 IEEE J. Quantum Electron. QEJJ7, 275. Murgatroyd I J, Norman A G, and Booker G R 1986 Phys. Rev. Lett

Luminescence and energy transfer processes in (Lu,Tb).sub.3./sub.Al.sub.5./sub.O.sub.12./sub. single crystalline films doped with Ce.sup.3+./sup.

Czech Academy of Sciences Publication Activity Database

Bartosiewicz, Karol; Babin, Vladimir; Nikl, Martin; Mareš, Jiří A.; Zorenko, Yu.; Gorbenko, V.

2016-01-01

Roč. 173, May (2016), s. 141-148 ISSN 0022-2313 R&D Projects: GA ČR GA16-15569S; GA ČR GAP204/12/0805 EU Projects: European Commission(XE) 316906 - LUMINET Institutional support: RVO:68378271 Keywords : lutetium terbium aluminum garnets * Ce 3+ * energy transfer * luminescence * single crystalline films Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.686, year: 2016

Factors Affecting the Efficiency of Excited-States Interactions of Complexes between Some Visible Light-Emitting Lanthanide Ions and Cyclophanes Containing Spirobiindanol Phosphonates

Directory of Open Access Journals (Sweden)

M. S. Attia

2007-01-01

Full Text Available The efficiency of excited-states interactions between lanthanide ions Tb3+ and Eu3+ and some new cyclophanes (I, II, and III has been studied in different media. High luminescence quantum yield values for terbium and europium complexes in DMSO and PMMA were obtained. The photophysical properties of the green and red emissive Tb3+ and Eu3+ complexes have been elucidated, respectively.

Preparation of thermoluminescent materials

International Nuclear Information System (INIS)

1976-01-01

Thermoluminescent materials have been found to be suitable for measuring long term exposures to low level ionizing radiation. Oxyhalides of lanthanum, gadolinium and yttrium, including the oxychlorides and oxybromides are activated with terbium and have been found to be most efficient oxygendominated phosphors having thermoradiant efficiencies with excitation by low level ionizing radiation. Thermoluminescence response increases when the previous materials have hafnium and zirconium additives

The origin of the Avram Iancu U-Ni-Co-Bi-As mineralization, Băiţa (Bihor) metallogenic district, Bihor Mts., Romania

Science.gov (United States)

Zajzon, Norbert; Szentpéteri, Krisztián; Szakáll, Sándor; Kristály, Ferenc

2015-10-01

The Băiţa metallogenic district in the Bihor Mountains is a historically important mining area in Romania. Uranium mining took place between 1952 and 1998 from various deposits, but very little is known about the geology and mineralogy of these deposits. In this paper, we describe geology and mineralogy of uranium mineralization of the Avram Iancu uranium mine from waste dump samples collected before complete remediation of the site. Texturally and mineralogically complex assemblages of nickeline, cobaltite-gersdorffite solid solution, native Bi, Bi-sulfosalts, molybdenite, and pyrite-chalcopyrite-sphalerite occur with uraninite, "pitchblende," and brannerite in most of the ore samples. The association of nickel, cobalt, and arsenic with uranium is reminiscent of five-element association of vein type U-Ni-Co-Bi-As deposits; however, the Avram Iancu ores appear to be more replacement-type stratiform/stratabound. Avram Iancu ore samples contain multistage complex, skarn, uranium sulfide, arsenide assemblages that can be interpreted to have been formed in the retrograde cooling stages of the skarn hydrothermal system. This mineralizing system may have built-up along Upper Cretaceous-Paleogene "Banatite" intrusions of diorite-to-granite composition. The intrusions crosscut the underlying uraniferous Permian formations in the stacked NW-verging Biharia Nappe System. The mineralization forms stacked, multilayer replacement horizons, along carbonate-rich lithologies within the metavolcanic (tuffaceous) Muncel Series. Mineral paragenesis and some mineral chemistry suggest moderate-to-high <450, i.e., 350-310 °C, formation temperatures for the uranium sulfide stage along stratigraphically controlled replacement zones and minor veins. Uranium minerals formed abundantly in this early stage and include botryoidal, sooty and euhedral uraninite, brannerite, and coffinite. Later and/or lower-temperature mineral assemblages include heterogeneous, complexly zoned arsenide

Low temperature transport in p-doped InAs nanowires

DEFF Research Database (Denmark)

Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal

2013-01-01

We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature...

Variations in first principles calculated defect energies in GaAs and ...

Indian Academy of Sciences (India)

Keywords. Ab initio calculations; semi-insulating GaAs; point defects. ... We are focusing on gallium arsenide. .... gallium vacancy in S & L, P et al and N & Z will exist in triple ... gallium antisite defect that include relaxation, a negative. U-effect is ...

Mining and Metal Pollution: Assessment of Water Quality in the ...

African Journals Online (AJOL)

Michael

2017-12-02

Dec 2, 2017 ... arsenides and metallic sulphides of As, Au, Cu, Fe,. Zn, Pb and Sb. In gold .... hydroxides of aluminium, iron, manganese and lead. Reactive minerals such ..... seen to form the complex Fe(OH)3, representing 83. % of the total ...

The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

Science.gov (United States)

Steel, G. G.

1970-01-01

Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

Multi-spectral optical absorption in substrate-free nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray, E-mail: lapierr@mcmaster.ca [Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario L8S 4L7 (Canada); Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada); Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada)

2014-09-22

A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper.

Science.gov (United States)

Jung, Yei Hwan; Chang, Tzu-Hsuan; Zhang, Huilong; Yao, Chunhua; Zheng, Qifeng; Yang, Vina W; Mi, Hongyi; Kim, Munho; Cho, Sang June; Park, Dong-Wook; Jiang, Hao; Lee, Juhwan; Qiu, Yijie; Zhou, Weidong; Cai, Zhiyong; Gong, Shaoqin; Ma, Zhenqiang

2015-05-26

Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials.

The geology of the Collins Bay uranium deposit, Saskatchewan

International Nuclear Information System (INIS)

Jones, B.E.

1980-01-01

The Collins Bay deposit lies within the Churchill Province on the western edge of the Wollaston lithostructural domain where it underlies the eastern edge of the Helikian Athabasca Formation. It is 6 miles north-northeast of the Rabbit Lake mine. Two principal zones of uranium mineralization are described. The A zone, a partly eroded, high-grade pod of metal oxide and arsenides sheathed by clay-like minerals, which trends north-northeast and lies under 25 to 40 feet of water; and the B zone, which lies 6 000 ft south of the A, subcrops under till cover and is a partly eroded zone composed of metal oxide and arsenides which occur within variably altered Athabasca Formation. The deposit is typical of the unconformity-type uranium-nickel deposits of the Athabasca Basin. Observed features fit well with the diagenetic-hydrothermal model for such deposts. (auth)

Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

Science.gov (United States)

Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

1987-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

Properties of GaAs:Cr-based Timepix detectors

Science.gov (United States)

Smolyanskiy, P.; Bergmann, B.; Chelkov, G.; Kotov, S.; Kruchonak, U.; Kozhevnikov, D.; Mora Sierra, Y.; Stekl, I.; Zhemchugov, A.

2018-02-01

The hybrid pixel detector technology brought to the X-ray imaging a low noise level at a high spatial resolution, thanks to the single photon counting. However, silicon as the most widespread detector material is marginally sensitive to photons with energies above 30 keV. Therefore, the high-Z alternatives to silicon such as gallium arsenide and cadmium telluride are increasingly attracting attention of the community for the development of X-ray imaging systems. The results of our investigations of the Timepix detectors bump bonded to sensors made of gallium arsenide compensated by chromium (GaAs:Cr) are presented in this work. The following properties are most important from the practical point of view: the IV characteristics, the charge transport characteristics, photon detection efficiency, operational stability, homogeneity, temperature dependence, as well as energy and spatial resolution are considered. The applicability of these detectors for spectroscopic X-ray imaging is discussed.

Medical Applications and Toxicities of Gallium Compounds

Directory of Open Access Journals (Sweden)

Christopher R. Chitambar

2010-05-01

Full Text Available Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal models of human disease while more recent studies have shown that gallium compounds may function as antimicrobial agents against certain pathogens. In a totally different realm, the chemical properties of gallium arsenide have led to its use in the semiconductor industry. Gallium compounds, whether used medically or in the electronics field, have toxicities. Patients receiving gallium nitrate for the treatment of various diseases may benefit from such therapy, but knowledge of the therapeutic index of this drug is necessary to avoid clinical toxicities. Animals exposed to gallium arsenide display toxicities in certain organ systems suggesting that environmental risks may exist for individuals exposed to this compound in the workplace. Although the arsenic moiety of gallium arsenide appears to be mainly responsible for its pulmonary toxicity, gallium may contribute to some of the detrimental effects in other organs. The use of older and newer gallium compounds in clinical medicine may be advanced by a better understanding of their mechanisms of action, drug resistance, pharmacology, and side-effects. This review will discuss the medical applications of gallium and its mechanisms of action, the newer gallium compounds and future directions for development, and the toxicities of gallium compounds in current use.

Modeled Neutron Induced Nuclear Reaction Cross Sections for Radiochemsitry in the region of Thulium, Lutetium, and Tantalum I. Results of Built in Spherical Symmetry in a Deformed Region

Energy Technology Data Exchange (ETDEWEB)

Hoffman, R. D. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2013-09-06

We have developed a set of modeled nuclear reaction cross sections for use in radiochemical diagnostics. Systematics for the input parameters required by the Hauser-Feshbach statistical model were developed and used to calculate neutron induced nuclear reaction cross sections for targets ranging from Terbium (Z = 65) to Rhenium (Z = 75). Of particular interest are the cross sections on Tm, Lu, and Ta including reactions on isomeric targets.

Luminescence and energy transfer processes in Ce.sup.3+./sup. activated (Gd,Tb).sub.3./sub.Al.sub.5./sub.O.sub.12./sub. single crystalline films

Czech Academy of Sciences Publication Activity Database

Bartosiewicz, Karol; Babin, Vladimir; Mareš, Jiří A.; Beitlerová, Alena; Zorenko, Yu.; Iskaliyeva, A.; Gorbenko, V.; Bryknar, Z.; Nikl, Martin

2017-01-01

Roč. 188, Aug (2017), s. 60-66 ISSN 0022-2313 R&D Projects: GA ČR GA16-15569S; GA MŠk LO1409 EU Projects: European Commission(XE) 316906 - LUMINET Institutional support: RVO:68378271 Keywords : gadolinium terbium aluminum garnets * Ce 3+ * energy transfer * luminescence * single crystalline flms Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 2.686, year: 2016

Neutron resonance spins of 159Tb from experiments with polarized neutrons and polarized nuclei

International Nuclear Information System (INIS)

Alfimenkov, V.P.; Ivanenko, A.I.; Lason', L.; Mareev, Yu.D.; Ovchinnikov, O.N.; Pikel'ner, L.B.; Sharapov, Eh.I.

1976-01-01

Spins of 27 neutron resonances of 159 Tb with energies up to 114 eV have been measured using polarized neutrons and nuclei beams in the modernized time-of-flight spectrometer of the IBR-30 pulse reator. The direct measurements of the terbium resonances spins performed using polarized neutrons reaffirm the conclusion that there are no unstationary effects in the behaviour of 159 Tb neutron resonances in the energy range

Giant onsite electronic entropy enhances the performance of ceria for water splitting

DEFF Research Database (Denmark)

Naghavi, S. Shahab; Emery, Antoine A.; Hansen, Heine Anton

2017-01-01

lanthanides, and reaches a maximum value of ≈4.7 kB per oxygen vacancy for Ce4+/Ce3+ reduction. This unique and large positive entropy source in ceria explains its excellent performance for high-temperature catalytic redox reactions such as water splitting. Our calculations also show that terbium dioxide has...... a high electronic entropy and thus could also be a potential candidate for solar thermochemical reactions....

Clinical evaluation of dentin hypersensitivity treatment with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl Avaliação clínica do tratamento da hiperestesia dentinária com laser de baixa potência de Arseniato de Gálio-Alumínio - AsGaAl

Directory of Open Access Journals (Sweden)

Luciana Chucre Gentile

2004-12-01

Full Text Available The dentin hypersensitivity is a painful condition rather prevalent in the general population. There are several ways of treatment for such condition, including the low intensity lasers. The proposal of this study was to verify the effectiveness of the Gallium-Aluminum-Arsenide diode laser in the treatment of this painful condition, using a placebo as control. MATERIALS AND METHODS: Thirty-two patients were selected, 22 females and 10 males, with ages ranging from 20 to 52 years old. The 32 patients were randomly distributed into two groups, treated and control; the sample consisted of 68 teeth, 35 in the treated group and 33 in the control group. The treated group was exposed to six laser applications with intervals from 48 to 72 hours, and the control group received, as placebo, applications of a curing light. RESULTS: A significant reduction was observed in the pain condition between the initial phase and after six laser applications; however, such reduction could also be observed for the control group exposed to the placebo. CONCLUSION: Therapy with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl induces a statistically significant reduction in the painful condition after each application and between the beginning and end of treatment, although there was no statistically significant difference between the treated group (laser and the control group (placebo at the end of treatment and after the mediate evaluation results (after 6 weeks, this way impairing the real measurement of laser effectiveness and placebo effect.A hiperestesia dentinária trata-se de uma condição dolorosa bastante prevalente nas populações mundiais. Várias são as modalidades de tratamento para tal condição, entre elas, os lasers de baixa potência. A proposta deste estudo foi a de verificar a efetividade do laser de diodo de Arseniato de Gálio-Alumínio no tratamento desta condição dolorosa, utilizando-se um placebo como controle. MATERIAIS E M�

500 MHz transient digitizers based on GaAs CCDs

International Nuclear Information System (INIS)

Bryman, D.; Cresswell, J.V.; LeNoble, M.; Poutissou, R.

1990-10-01

A wide bandwidth transient digitizer based on a recently produced gallium arsenide charged coupled device is under development. The CCDs have 128 pixels and operate at 500 MHz. Initial testing of prototype modules in Experiment 787 at Brookhaven National Laboratory is reported. (Author) (8 refs., 10 figs.)

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

NARCIS (Netherlands)

Prins, M.W.J.; Jansen, R.; Kempen, van H.

1996-01-01

We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate

Spin-dependent transport in metal/semiconductor tunnel junctions

NARCIS (Netherlands)

Prins, M.W.J.; Kempen, van H.; Leuken, Van H.; Groot, de R.A.; Roy, van W.; De Boeck, J.

1995-01-01

This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to

Study and characterization of semi-conductor materials III-V for their applications to the ionizing radiation detection

International Nuclear Information System (INIS)

Moulin, H.

1989-01-01

This work is the study of photoconduction in volume of gallium arsenide and of indium phosphide doped with iron for their applications to X-ray detection which is carried out directly in the material. After having recalled the physical characterization of materials and the principle of photoconduction, we describe two informatic simulations. The first supposes the spatial uniformity of the electric field on the semiconductor, the second takes the spatial and temporal variations of the field into consideration. Then we show the advantage of a first irradiation to neutrons of the photoconductors. With the gallium arsenide there is swiftness improvement of the detectors to the detriment of the sensitivity. The second part studies first the characterizations in the obscurity of the photoconductors according to the electric polarization field and to the neutron dose they received before and then their characterizations under X radiation. 77 refs., 221 figs., 33 tabs., 6 photos., 3 annexes

Tandem for power generation. New sandwich concentrator cell with over 30% efficiency; Im Tandem Strom erzeugen. Neue Mehrschicht-Konzentratorzelle erzielt ueber 30% Wirkungsgrad

Energy Technology Data Exchange (ETDEWEB)

Anon.

2000-11-01

The Fraunhofer-Institut fuer Solare Energiesysteme at Freiburg, Germany, claims a 'best ever' efficiency of a monolithic tandem concentrator solar cell with a sandwich structure based on gallium-indium arsenide and gallium-indium phosphide. The new solar cell can be produced in a single process based on an Aixtron AG (Aachen, Germany) separator which is also used for industrial production of solar cells for aerospace applications. [German] Das Fraunhofer-Institut fuer Solare Energiesysteme in Freiburg hat einen neuen Wirkungsgradrekord fuer monolithische Tandem-Konzentratorsolarzellen gemeldet. Die Wissenschaftler am Fraunhofer-Institut fuer Solare Energiesysteme (Fraunhofer ISE) haben neue Schichtstrukturen auf der Basis von Gallium-Indium-Arsenid und Gallium-Inidum-Phosphid entwickelt. Die neue Solarzelle kann in einem einzigen Prozess hergestellt werden. Fuer diesen Prozess setzen die Freiburger Solarzellenforscher eine Abscheideanlage der Firma Aixtron AG aus Aachen ein, wie sie auch in der Industrie zur Herstellung von Solarzellen fuer Anwendungen im Weltraum genutzt wird. (orig.)

Transformational III-V Electronics

KAUST Repository

Nour, Maha A.

2014-04-01

Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

Heat load of a P-doped GaAs photocathode in SRF electron gun

International Nuclear Information System (INIS)

Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Jain, A.; Gupta, R.; Holmes, D.

2010-01-01

Many efforts were made over the last decades to develop a better polarized electron source for the high energy physics. Several laboratories operate DC guns with the Gallium-Arsenide photo-cathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved using a Superconducting RF electron gun, which delivers beams of higher brightness than DC guns does, because the field gradient at the cathode is higher. SRF guns with metal cathodes and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since the cathode will be normal conducting, the problem about the heat load stemming from the cathode arises. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and the verification by measuring the quality factor of the gun with and without cathode.

MOCVD process technology for affordable, high-yield, high-performance MESFET structures. Phase 3: MIMIC

Science.gov (United States)

1993-01-01

Under the MIMIC Program, Spire has pursued improvements in the manufacturing of low cost, high quality gallium arsenide MOCVD wafers for advanced MIMIC FET applications. As a demonstration of such improvements, Spire was tasked to supply MOCVD wafers for comparison to MBE wafers in the fabrication of millimeter and microwave integrated circuits. In this, the final technical report for Spire's two-year MIMIC contract, we report the results of our work. The main objectives of Spire's MIMIC Phase 3 Program, as outlined in the Statement of Work, were as follows: Optimize the MOCVD growth conditions for the best possible electrical and morphological gallium arsenide. Optimization should include substrate and source qualification as well as determination of the optimum reactor growth conditions; Perform all work on 75 millimeter diameter wafers, using a reactor capable of at least three wafers per run; and Evaluate epitaxial layers using electrical, optical, and morphological tests to obtain thickness, carrier concentration, and mobility data across wafers.

Diffusion in Intrinsic and Highly Doped III-V Semiconductors

CERN Multimedia

Stolwijk, N

2002-01-01

%title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

Synthesis of novel fluorescent probe Tb(III)-7-carboxymethoxy-4-methylcoumarin complex for sensing of DNA

International Nuclear Information System (INIS)

Hussein, Belal H.M.; Azab, Hassan A.; Fathalla, Walid; Ali, Sherin A.M.

2013-01-01

New fluorescent probe Tb(III) (7-carboxymethoxy-4-methylcoumarin)2(SCN) (C2H5OH)(H2O) was synthesized and characterized by spectroscopy and thermal analysis. The absorption and fluorescence spectra of 7-carboxymethoxy-4-methylcoumarin (CMMC) and Tb(III)–CMMC complex have been measured in different solvents. The interactions of Tb(III)–CMMC complex with calf thymus nucleic acid (CT-DNA) have been investigated using steady state fluorescence measurements. The changes in the fluorescence intensity have been used for the quantitative determination of DNA with LOD of 3.45 ng in methanol–water (9:1, v/v). The association constants of DNA with Tb(III)–CMMC complex was found to be 2.62×1010 M −1 . - Highlights: ► New fluorescent probe Terbium (III)-7-carboxy methoxy-4-methylcoumarin complex has been synthesized and characterized. ► FTIR spectrum of Tb(III)-complex shows a characteristic band for thiocyanate group. ► DNA interaction with Terbium (III)-7-carboxy methoxy-4-methylcoumarin has been studied by fluorescence techniques. ► The change in the fluorescence intensity has been used for the quantitative determination of DNA. ► The result was better than most of the well-known methods including the ethidium bromide method.

Fabrication and properties of highly luminescent materials from Tb(OH)3-SiO2 and Tb(OH)3-SiO2:Eu3+ nanotubes

International Nuclear Information System (INIS)

Tran Thu Huong; Tran Kim Anh; Le Quoc Minh

2009-01-01

Luminescent nanomaterials with one-dimensional (1D) structures have attracted much attention due to their unique properties and potential applications in nanophotonics and nanobiophotonics. In this paper, we report a synthesis of terbium - hydroxide - at - silica Tb(OH) 3 -SiO 2 and Tb(OH) 3 -SiO 2 :Eu 3+ nanotubes. Terbium - hydroxide tubes were synthesized by soft template method. The size of the tubes can be controlled precisely and have outer diameters ranging from 80 to 120 nm, wall thickness of about 30 nm, and lengths ranging from 300 to 800 nm. To fabricate core/shell materials, the seed growth method is used. FESEM, X-ray diffraction, Raman spectra of Tb(OH) 3 and Tb(OH) 3 -SiO 2 nanotubes were investigated. The photoluminescence (PL) spectrum of Tb(OH) 3 under 325 nm excitation consists of four main peaks at 488, 542, 582, and 618 nm. Furthermore, a preliminary suggestion for the mechanism of growth of the Tb(OH) 3 nanotubes using the soft - template synthesis technique has been proposed. The PL intensity from Tb(OH) 3 -SiO 2 or Tb(OH) 3 -SiO 2 :Eu 3+ nanotubes is much stronger than that of Tb(OH) 3 .

Simulation of the magnetocaloric effect in Tb nanofilms

Energy Technology Data Exchange (ETDEWEB)

Anselmo, Dory Hélio A. L., E-mail: doryh@dfte.ufrn.br [Departamento de Física Teórica e Experimental (DFTE), Universidade Federal do Rio Grande do Norte (UFRN), Natal-RN (Brazil); Mello, Vamberto D. [Departamento de Física,Universidade do Estado do Rio Grande do Norte (UERN), Mossoró-RN (Brazil); Vasconcelos, Manoel S. [Escola de Ciência e Tecnologia (ECT), Universidade Federal do Rio Grande do Norte (UFRN), Natal-RN (Brazil)

2014-03-31

Rare-earth (RE) metals have different magnetic structures resulting from the competition between the crystal-field and exchange interactions. When a magnetic field is applied it creates a third interaction and the magnetic structures are more complicated. In thin films, it is expected that even the magnetic arrangement itself can be strongly modified. Rare-earth helimagnets such as Terbium (Tb), Holmium (Ho) and Dysprosium (Dy) represent the best candidates to evidence such finite-size effects. This finite-size effect is caused by the reduced number of atoms in the direction perpendicular to the film plane that leads to a decrease of the total magnetic exchange energy. We report this contribution to the investigation of magnetocaloric effect (MCE) of thin Terbium films in the helimagnetic temperature range, from T{sub C} = 219 K to T{sub N} = 231 K, for external fields of the order of 1 kOe. We find that for strong fields, H = 50 kOe, the adiabatic temperature change ΔT near the Néel temperature is around 15 K for any thickness of Tb films. However large thickness effects are found for small values of the magnetic field. For field strength of the order of a few kOe, the thermocaloric efficiency increases significantly for ultrathin (nanomagnetic) films.

Line emissions from sonoluminescence in aqueous solutions of halide salts without noble gases

Energy Technology Data Exchange (ETDEWEB)

Liang, Jinfu, E-mail: liang.shi2007@163.com [The Key Laboratory of Modern Acoustics, Ministry of Education, Institution of Acoustics, Nanjing University, Nanjing 210093 (China); School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001 (China); Chen, Weizhong, E-mail: wzchen@nju.edu.cn [The Key Laboratory of Modern Acoustics, Ministry of Education, Institution of Acoustics, Nanjing University, Nanjing 210093 (China); Zhou, Chao; Cui, Weicheng; Chen, Zhan [The Key Laboratory of Modern Acoustics, Ministry of Education, Institution of Acoustics, Nanjing University, Nanjing 210093 (China)

2015-02-20

Line emissions of trivalent terbium (Tb{sup 3+}) ion were observed from single-bubble sonoluminescence (SL) in an aqueous solution of terbium chloride (TbCl{sub 3}) that contained no noble gas. In addition, sodium (Na) lines were observed in multi-bubble SL in aqueous solutions of various halide salts that contained no noble gas. These observations show that the halide ions, such as Cl{sup −}, Br{sup −}, and I{sup −}, help for line emissions as the noble gases. The intensity of a line emission depends on both the chemical species produced by cavitation bubbles and the temperature of SL bubble that responds to the driving ultrasound pressure. With the increase of driving pressure, some line emissions attached to the continuous spectrum may become increasingly clear, while other line emissions gradually become indistinct. - Highlights: • Line emissions of Tb(III) ions were observed without the presence of noble gases. • The halide ions help to generate a line emission during sonoluminescence. • The intensity of a line emission mainly depends on the bubble's temperature. • The definition of a line emission is related to the temperature of caviation bubble and the kind of host liquid.

Preparation of extractive resins for producing terbium-161

International Nuclear Information System (INIS)

De la Cruz B, C. C.; Monroy G, F.

2009-10-01

This paper presents the development of a methodology for extractive resins preparation to base of HDEHP, which allows to separation of Tb from Gd generating an own technology of preparation of these resins. The study included the extractive resins preparation from 6 different supports: kieselguhr Dg, alumina, red volcanic rock, chiluca, quarry and fluorite; two treatment types of of supports and varied concentrations of HDEHP extractant (di(2-etil hexyl) orthophosphoric acid), in order to determine which resin has improved efficiency of Gd and Tb separation, and radionuclide purity of 161 Tb. Resins were prepared to base of kieselguhr to determine the most appropriate silicon deposition process. Two silicon deposition treatments were realized: treatment I , by contact with silicon deposition solution (dimethyldichlorosilane / heptane 1:30) and treatment II by contact with vapors of dimethyldichlorosilane in vacuum. The extractant retention was carried out to different concentrations of HDEHP / acetone: 1:4, 1:8, 1:15, 1:20, 1:30 and 1:40. According to the results, there is not direct relation of HDEHP concentration used in extractive resins preparation to base of kieselguhr over the efficiency of Gd and Tb separation and of radionuclide purity of 161 Tb. The effect of support in the efficiency of Gd and Tb separation was studied to prepare resins with the supports kieselguhr, alumina, quarry, chiluca, volcanic rock and fluorite, using the silicon deposition treatment II for the supports and a concentration of HDEHP / acetone 1:20, for extractant retention. Only resins based on kieselguhr could separate to Gd from Tb quantitatively, the resin at a concentration of HDEHP / Acetone 1:20 was the best results obtained in Gd and Tb separation, achieving a separation efficiency greater than 90% and a radionuclide purity higher than 99%. (Author)

The systems terbium (holmium) nitrate-piperidine nitrate-water

International Nuclear Information System (INIS)

Khisaeva, D.A.; Zhuravlev, E.F.; Semenova, Eh.B.

1982-01-01

Using the method of cross sections at 25 and 50 deg C solubility in the systems Tb(NO 3 ) 2 -C 5 H 10 NHxHNO 3 -H 2 O and Ho(NO 3 ) 3 -C 5 H 10 NHxHNO 3 -H 2 O has been studied. The systems are characterized by chemical interaction of components. Solubility isotherms have crystallization fields of solid phases of the composition Tb(NO 3 ) 3 x3[C 5 H 10 NHxHNO 3 ]x3H 2 O and Ho(NO 3 ) 3 x2[C 5 H 10 NHxHNO 3 ]. The compounds detected are singled out preparatively, their IR spectra are studied, their thermogravimetric analysis is carried out. Investigation results are compared with similar systems formed by nitrates of other representatives of rare earth group

Spin waves in terbium. II. Magnon-phonon interaction

International Nuclear Information System (INIS)

Jensen, J.; Houmann, J.G.

1975-01-01

The selection rules for the linear couplings between magnons and phonons propagating in the c direction of a simple basal-plane hcp ferromagnet are determined by general symmetry considerations. The acoustic-optical magnon-phonon interactions observed in the heavy-rare-earth metals have been explained by Liu as originating from the mixing of the spin states of the conduction electrons due to the spin-orbit coupling. We find that this coupling mechanism introduces interactions which violate the selection rules for a simple ferromagnet. The interactions between the magnons and phonons propagating in the c direction of Tb have been studied experimentally by means of inelastic neutron scatttering. The magnons are coupled to both the acoustic- and optical-transverse phonons. By studying the behavior of the acoustic-optical coupling, we conclude that it is a spin-mixed-induced coupling as proposed by Liu. The coupled magnon--transverse-phonon system for the c direction of Tb is analyzed in detail, and the strengths of the couplings are deduced as a function of wave vector by combining the experimental studies with the theory

Voltammetric determination of zirconium using azo compounds

International Nuclear Information System (INIS)

Orshulyak, O.O.; Levitskaya, G.D.

2008-01-01

The optimum conditions for zirconium complexation with azo compounds are found. The applicability of Eriochrome Red B, Calcon, and Calcion to the voltammetric determination of zirconium, total Zr(IV) and Hf(IV), and Zr(IV) in the presence of Zn(II), Cu(II), Cd(II), Ni(II), or Ti(IV) is demonstrated. The developed procedures are used to determine zirconium in a terbium alloy and in an alloy for airplane wheel drums [ru

Fast Clock Recovery for Digital Communications

Science.gov (United States)

Tell, R. G.

1985-01-01

Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).

Fundamental investigation of high temperature operation of field effect transistor devices

Science.gov (United States)

Chern, Jehn-Huar

In this dissertation copper germanium (CuGe)-based materials were investigated as potential ohmic contacts to n-type gallium arsenide (GaAs). The CuGe-based contacts to GaAs were found to not form any reaction products with GaAs and to have low contact resistance comparable to that of nickel gold germanium (NiAuGe) ohmic contacts to GaAs. The potential for high temperature applications using CuGe ohmic contacts was investigated. A guideline for further reduction of the contact resistance has been achieved after investigating the detailed mechanism of the formation of binary CuGe contacts over a wide range of Ge concentrations. The thermal stability of CuGe contacts was significantly enhanced and improved by introducing a diffusion barrier, titanium tungsten nitride (TiWNx), and a gold (Au) overlayer for high temperature applications. Novel approaches such as epitaxial thulium phosphide (TmP) Schottky contacts and the utilization of low temperature (LT)-aluminum gallium arsenide (AlGaAs) were also investigated in this dissertation and likely will be the standard technologies for a new generation of high-temperature electronics. Inserting a layer of aluminum arsenide (AlAs) underneath the channel of a GaAs-based MESFET was found to reduce substrate leakage currents by a factor of 30 compared with the same MESFET directly fabricated on a semi-insulating GaAs substrate. In addition to AlAs, and AlxGa1-xAs materials, new materials grown at low temperatures such as LT-AlGaAs were used in heterojunction FET structures as a back wall barrier. Low drain leakage currents were achieved using AlAs and LT-AlGaAs as the back wall barriers. Some fundamental properties regarding these materials are of great interest and in need of further characterization. Part of the work in this dissertation was devoted to the characterization of device performance for different structure designs at elevated temperatures. The suitability of GaAs-based and gallium arsenide (GaN)-based MESFET

An in-vacuum diffractometer for resonant elastic soft x-ray scattering

Czech Academy of Sciences Publication Activity Database

Hawthorn, D.G.; He, F.; Venema, L.; Davis, H.; Achkar, A.J.; Zhang, J.; Sutarto, R.; Wadati, H.; Radi, A.; Wilson, T.; Wright, G.; Shen, K.M.; Geck, J.; Zhang, H.; Novák, Vít; Sawatzky, G.A.

2011-01-01

Roč. 82, č. 7 (2011), 073104/1-073104/8 ISSN 0034-6748 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium arsenide * lanthanum compounds * manganese compounds * neodymium * reflectivity * semiconductor thin films * strontium compounds * X-ray diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.367, year: 2011

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

Science.gov (United States)

Yei Hwan Jung; Tzu-Hsuan Chang; Huilong Zhang; Chunhua Yao; Qifeng Zheng; Vina W. Yang; Hongyi Mi; Munho Kim; Sang June Cho; Dong-Wook Park; Hao Jiang; Juhwan Lee; Yijie Qiu; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma

2015-01-01

Today’s consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems...

Gallium arsenide detectors for minimum ionizing particles

International Nuclear Information System (INIS)

Beaumont, S.B.; Bertin, R.; Booth, C.N.; Buttar, C.; Capiluppi, C.; Carraresi, L.; Cindolo, F.; Colocci, M.; Combley, F.H.; D'Auria, S.; Del Papa, C.; Dogru, M.; Edwards, M.; Fiori, F.; Foster, F.; Francescato, A.; Gray, R.; Hill, G.; Hou, Y.; Houston, P.; Hughes, G.; Jones, B.K.; Lynch, J.G.; Lisowsky, B.; Matheson, J.; Nava, F.; Nuti, M.; O'Shea, V.; Pelfer, P.G.; Raine, C.; Santana, J.; Saunders, I.J.; Seller, P.H.; Shankar, K.; Sharp, P.H.; Skillicorn, I.O.; Sloan, T.; Smith, K.M.; Tartoni, N.; Ten Have, I.; Turnbull, R.M.; Vanni, U.; Vinattieri, A.; Zichichi, A.

1993-01-01

Progress on the development of GaAs solid state detectors is presented. 80% charge collection efficiency has been achieved, and double sided detectors with metal rectifying contacts have been tested. Measurements of capacitance and tests with SEM are giving more information on the behaviour of these devices. (orig.)

Development of gallium arsenide gamma spectrometric detector

International Nuclear Information System (INIS)

Kobayashi, T.; Kuru, I.

1975-03-01

GaAs semiconductor material has been considered to be a suitable material for gamma-ray spectrometer operating at room temperature since it has a wid-band gap, larger than that of silicon and germanium. The basic objective of this work is to develop a GaAs gamma-ray spectrometric detector which could be used for gamma spectrometric measurement of uranium and plutonium in nuclear fuel safeguards. Liquid phase epitaxial techniques using iron (Fe) as dopant have been developed in making high purity GaAs crystals suitable for gamma-ray spectrometer operating at room temperature. Concentration of Fe in the epitaxial crystal was controlled by initial growth temperature. The best quality epitaxial crystal was obtained under the following conditions: starting temperature is about 800degC, the proportion of Fe to Ga solvent is 1 to 300. Carrier concentration of epitaxial crystals grown distributed in the ranges of 10 12 cm -3 to 10 14 cm -3 at room temperature. The thickness of the crystals ranged from 38 μm to 120 μm. Au-GaAs surface barrier detector was made of epitaxial crystal. Some of the detector were encapsulated in a can with a 50 μm Be window by welding a can to the detector holder. The detector with high energy resolution and good charge collecting characteristics was selected by alpha spectrometry at room temperature. Energy resolution of the detector for gamma-rays up to about 200 keV was very good at room temperature operation. The best energy resolutions taken with a GaAs detector were 3 keV (fwhm) and 3.8 keV for 241 Am 59.6 keV and 57 Co 122 keV, respectively, at room temperature. In order to study the applicability of the detector for nuclear safeguards, the measurements of 235 U gamma-ray spectrum have been carried out at room temperature. It was clarified that the gamma-ray spectrum of enriched U sample could be measured in high resolution with GaAs detector at room temperature, and that the content of 235 U in enriched U sources could be determined by measuring gamma-ray spectrum with GaAs detector. However, gamma-ray counting efficiency of the detector was not enough to built portable type instrument of gamma-ray spectrometer used for routine works of nuclear safeguards. In order to improve gamma-ray counting efficiency of the detector, double-epitaxial-layer detector has been studied. The preliminary results showed that the improvement of the detector gamma-ray counting efficiency was possible by using double-epitaxial-layer structure. It was also clarified that the good quality GaAs crystal was a key to obtaining a low noise, good charge collection detector

DX centers in indium aluminum arsenide heterostructures

Science.gov (United States)

Sari, Huseyin

DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model and the grand canonical ensemble (GCE) the energy levels of the DX centers relative to the conduction band edge were estimated. The optical properties of the DX centers were also investigated using a 1.0 mum thick, Si-doped bulk-like GaAlAs epitaxial layer grown by MBE on a GaAs substrate. A conductivity modulation experiment using a stripe-patterned mask has been performed at 77°K. A conductivity difference, up to 10 4 along parallel and perpendicular directions relative to the stripes, has been measured. The difference in conductivity is a result of the large PPC effect of the DX centers and clearly indicates the localized nature of these deep levels.

Selenium implantation in epitaxial gallium arsenide layers

International Nuclear Information System (INIS)

Inada, T.; Tokunaga, K.; Taka, S.; Yuge, Y.; Kohzu, H.

1981-01-01

Selenium implantation at room temperature in S-doped epitaxial GaAs layers as a means of the formation of n + layers has been investigated. Doping profiles for Se-implanted layers have been examined by a C-V technique and/or a differential Hall effect method. It has been shown that n + layers with a maximum carrier concentration of approx. equal to1.5 x 10 18 cm -3 can be formed by implantation followed by a 15 min annealing at 950 0 C. Contact resistance of ohmic electrodes is reduced by use of the Se-implanted n + layers, resulting in the improvement on GaAs FET performance. Measured minimum noise figure of the Se-implanted GaAs FETs is 0.74 dB at 4 GHz. (orig.)

The 20 and 30 GHz MMIC technology for future space communication antenna system

Science.gov (United States)

Anzic, G.; Connolly, D. J.

1984-10-01

The development of fully monolithic gallium arsenide receive and transmit modules is described. These modules are slated for phased array antenna applications in future 30/20 gigahertz communications satellite systems. Performance goals and various approaches to achieve them are discussed. The latest design and performance results of components, submodules and modules are presented.

The Incorporation of Lithium Alloying Metals into Carbon Matrices for Lithium Ion Battery Anodes

Science.gov (United States)

Hays, Kevin A.

An increased interest in renewable energies and alternative fuels has led to recognition of the necessity of wide scale adoption of the electric vehicle. Automotive manufacturers have striven to produce an electric vehicle that can match the range of their petroleum-fueled counterparts. However, the state-of-the-art lithium ion batteries used to power the current offerings still do not come close to the necessary energy density. The energy and power densities of the lithium ion batteries must be increased significantly if they are going to make electric vehicles a viable option. The chemistry of the lithium ion battery, based on lithium cobalt oxide cathodes and graphite anodes, is limited by the amount of lithium the cathode can provide and the anode will accept. While these materials have proven themselves in portable electronics over the past two decades, plausible higher energy alternatives do exist. The focus is of this study is on anode materials that could achieve a capacity of more than 3 times greater than that of graphite anodes. The lithium alloying anode materials investigated and reported herein include tin, arsenic, and gallium arsenide. These metals were synthesized with nanoscale dimensions, improving their electrochemical and mechanical properties. Each exhibits their own benefits and challenges, but all display opportunities for incorporation in lithium ion batteries. Tin is incorporated in multilayer graphene nanoshells by introducing small amounts of metal in the core and, separately, on the outside of these spheres. Electrolyte decomposition on the anode limits cycle life of the tin cores, however, tin vii oxides introduced outside of the multilayer graphene nanoshells have greatly improved long term battery performance. Arsenic is a lithium alloying metal that has largely been ignored by the research community to date. One of the first long term battery performance tests of arsenic is reported in this thesis. Anodes were made from nanoscale

Structure, magnetic behavior, and anisotropy of homoleptic trinuclear lanthanoid 8-quinolinolate complexes.

Science.gov (United States)

Chilton, Nicholas F; Deacon, Glen B; Gazukin, Olga; Junk, Peter C; Kersting, Berthold; Langley, Stuart K; Moubaraki, Boujemaa; Murray, Keith S; Schleife, Frederik; Shome, Mahasish; Turner, David R; Walker, Julia A

2014-03-03

Three complexes of the form [Ln(III)3(OQ)9] (Ln = Gd, Tb, Dy; OQ = 8-quinolinolate) have been synthesized and their magnetic properties studied. The trinuclear complexes adopt V-shaped geometries with three bridging 8-quinolinolate oxygen atoms between the central and peripheral eight-coordinate metal atoms. The magnetic properties of these three complexes differ greatly. Variable-temperature direct-current (dc) magnetic susceptibility measurements reveal that the gadolinium and terbium complexes display weak antiferromagnetic nearest-neighbor magnetic exchange interactions. This was quantified in the isotropic gadolinium case with an exchangecoupling parameter of J = -0.068(2) cm(-1). The dysprosium compound displays weak ferromagnetic exchange. Variable-frequency and -temperature alternating-current magnetic susceptibility measurements on the anisotropic cases reveal that the dysprosium complex displays single-molecule-magnet behavior, in zero dc field, with two distinct relaxation modes of differing time scales within the same molecule. Analysis of the data revealed anisotropy barriers of Ueff = 92 and 48 K for the two processes. The terbium complex, on the other hand, displays no such behavior in zero dc field, but upon application of a static dc field, slow magnetic relaxation can be observed. Ab initio and electrostatic calculations were used in an attempt to explain the origin of the experimentally observed slow relaxation of the magnetization for the dysprosium complex.

Synthesis of novel fluorescent probe Tb(III)-7-carboxymethoxy-4-methylcoumarin complex for sensing of DNA

Energy Technology Data Exchange (ETDEWEB)

Hussein, Belal H.M., E-mail: belalhussein102@yahoo.com [Department of Chemistry, Faculty of Science, Suez Canal University, Ismailia (Egypt); Azab, Hassan A. [Department of Chemistry, Faculty of Science, Suez Canal University, Ismailia (Egypt); Fathalla, Walid [Department of Mathematical and Physical Sciences, Faculty of Engineering, Port-Said University, Port-Said (Egypt); Ali, Sherin A.M. [Department of Mathematical and Physical Sciences, Faculty of Engineering, Suez Canal University, Ismailia (Egypt)

2013-02-15

New fluorescent probe Tb(III) (7-carboxymethoxy-4-methylcoumarin)2(SCN) (C2H5OH)(H2O) was synthesized and characterized by spectroscopy and thermal analysis. The absorption and fluorescence spectra of 7-carboxymethoxy-4-methylcoumarin (CMMC) and Tb(III)-CMMC complex have been measured in different solvents. The interactions of Tb(III)-CMMC complex with calf thymus nucleic acid (CT-DNA) have been investigated using steady state fluorescence measurements. The changes in the fluorescence intensity have been used for the quantitative determination of DNA with LOD of 3.45 ng in methanol-water (9:1, v/v). The association constants of DNA with Tb(III)-CMMC complex was found to be 2.62 Multiplication-Sign 1010 M{sup -1}. - Highlights: Black-Right-Pointing-Pointer New fluorescent probe Terbium (III)-7-carboxy methoxy-4-methylcoumarin complex has been synthesized and characterized. Black-Right-Pointing-Pointer FTIR spectrum of Tb(III)-complex shows a characteristic band for thiocyanate group. Black-Right-Pointing-Pointer DNA interaction with Terbium (III)-7-carboxy methoxy-4-methylcoumarin has been studied by fluorescence techniques. Black-Right-Pointing-Pointer The change in the fluorescence intensity has been used for the quantitative determination of DNA. Black-Right-Pointing-Pointer The result was better than most of the well-known methods including the ethidium bromide method.

Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

Science.gov (United States)

Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

2015-12-22

Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

Nonlinear THz spectroscopy on n-type GaAs

Energy Technology Data Exchange (ETDEWEB)

Gaal, Peter

2008-06-23

In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10{sup 16} cm{sup -3} to 10{sup 17} cm{sup -3} are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena. (orig.)

Comparison of charge collection in semiconductor detectors and timing resolution, using a sub-nanosecond transimpedance amplifier

International Nuclear Information System (INIS)

Rudge, A.

1995-01-01

A transimpedance amplifier, with a risetime of <600 ps and a noise of <1000 RMS electrons in a 500 MHz bandwidth, has been used for comparison of charge collection times in silicon, gallium arsenide and diamond detectors. The use of silicon detectors as trigger counters/hodoscopes is demonstrated, together with measured timing characteristics. (orig.)

Comparison of charge collection in semiconductor detectors and timing resolution, using a sub-nanosecond transimpedance amplifier

Energy Technology Data Exchange (ETDEWEB)

Rudge, A. [European Organization for Nuclear Research, Geneva (Switzerland)

1995-06-01

A transimpedance amplifier, with a risetime of <600 ps and a noise of <1000 RMS electrons in a 500 MHz bandwidth, has been used for comparison of charge collection times in silicon, gallium arsenide and diamond detectors. The use of silicon detectors as trigger counters/hodoscopes is demonstrated, together with measured timing characteristics. (orig.).

Tunable structures and modulators for THz light

Czech Academy of Sciences Publication Activity Database

Kužel, Petr; Kadlec, Filip

2008-01-01

Roč. 9, - (2008), 197-214 ISSN 1631-0705 R&D Projects: GA AV ČR KJB100100512; GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : terahertz radiation * tunable devices * photonic crystals * strontium titanate * gallium arsenide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.164, year: 2008

Tb3O2Cl[SeO3]2 and Tb5O4Cl3[SeO3]2: Oxide Chloride Oxoselenates(IV) of Trivalent Terbium with ''Lone-Pair'' Channel or Layer Structures

International Nuclear Information System (INIS)

Wontcheu, Joseph; Schleid, Thomas

2005-01-01

Orthorhombic Tb 3 O 2 Cl[SeO 3 ] 2 (Pnma; a = 535.16(4), b = 1530.51(9), c = 1081.72(7) pm; Z = 4) is formed by reacting a stoichiometric mixture of Tb 4 O 7 , Tb, TbCl 3 , and SeO 2 in a suitable molar ratio (12: 8: 7: 42) within seven days in an evacuated sealed silica tube at 850 C. The needle-shaped, colourless single crystals (light, water and air stable) exhibit one-dimensional strands [(Tb1) 3/3 (Tb2) 2/1 O 4/2 ] 5+ [O 2 Tb 3 ] 5+ along [100] formed by two parallel chains [OTb 4/2 ] 4+ of trans-edge connected [OTb 4 ] 10+ tetrahedra (d(O-Tb) = 220 - 231 pm) which share an extra edge per chain link. The crystal structure contains two crystallographically different Tb 3+ cations: Tb1 is coordinated as bicapped trigonal prism, while Tb2 resides in square antiprismatic coordination. The Se 4+ coordination is best described as Ψ 1 tetrahedral ([SeO 3 E] 2- ; E: non-binding electron pair). The non-binding ''lone-pair'' electrons of four [SeO 3 ] 2- groups and two Cl - anions form pseudo-hexagonal empty channels along [100] between four cationic double chains. Tb 5 O 4 Cl 3 [SeO 3 ] 2 was prepared likewise as plate-like, colourless single crystals by solid-state reaction of an admixture of Tb 4 O 7 , Tb, TbOCl, TbCl 3 , and SeO 2 (molar ratio: 9: 6: 21: 7: 28) in an evacuated sealed silica tube during seven days at 850 C. This compound crystallizes in the monoclinic system (C2/m; a = 1229.13(9), b = 546.17(4), c = 978.79(7) pm, β = 90.485(6) ; Z = 2) and contains three crystallographically different Tb 3+ cations in seven- and eightfold coordination of O 2- and Cl - anions, respectively. The crystal structure of Tb 5 O 4 Cl 3 [SeO 3 ] 2 is layered and built up of corrugated terbium-oxygen sheets [O 4 Tb 5 ] 7+ formed by edge- and vertex-shared [OTb 4 ] 10+ tetrahedra (d(O-Tb) = 226-232 pm) spreading parallel (001). The structure is strongly related to the ''lone-pair'' channel structures of Tb 2 O[SeO 3 ] 2 and Tb 3 O 2 Cl[SeO 3 ] 2 , where single ([OTb 2 ] 4

Unconstrained Heterogeneous Colloidal Quantum Dots Embedded in GaAs/GaSb Nanovoids

Science.gov (United States)

2014-04-17

hexadecylamine ( HDA ), and 5 mL of TOP were added to a three-neck flask, which was then degassed in a vacuum and heated to 130 C for 1.5 hours. Next...arsenide GaSb – gallium antimonide HDA – hexadecylamine HDD – hexadecanediol HR-SEM – high-resolution scanning electron microscope HR-TEM – high

InP solar cell with window layer

Science.gov (United States)

Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

1994-01-01

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

Green fluorescence of terbium ions in lithium fluoroborate glasses ...

Indian Academy of Sciences (India)

tion and solid-state lasers attracted remarkable attention in the last few decades. .... Figure 1. Vis absorption spectrum of 1.0 mol% Tb3+-doped. LBZLFB glass. Figure 2. .... both ions quickly decay non-radiatively to the ground level. The energy ...

Analysis of the fourth spectrum of terbium (Tb IV)

International Nuclear Information System (INIS)

Spector, N.; Sugar, J.

1976-01-01

The low-energy level structure of Tb 3+ has been derived from spectra obtained with a sliding spark light source. The 7 F ground term of the 4f 8 configuration was found as well as all levels of the configurations 4f 7 5d, 6s, and 6p built on the 8 S 7 / 2 core state of 4f 7 . Of the possible 51 lines connecting these levels, 48 were observed. Optimized radial parameters are given for the observed configurations. A value for the ionization energy of 39.37(0.10) eV is derived for Tb 3+

Inelastic scattering of neutrons by spin waves in terbium

DEFF Research Database (Denmark)

Bjerrum Møller, Hans; Houmann, Jens Christian Gylden

1966-01-01

Measurements of spin-wave dispersion relations for magnons propagating in symmetry directions in ferromagnetic Tb; it is first experiment to give detailed information on magnetic excitations in heavy rare earths; Tb was chosen for these measurements because it is one of few rare-earth metals which...... does not have very high thermal-neutron capture cross section, so that inelastic neutron scattering experiments can give satisfactory information on magnon dispersion relations....

Short period strain balanced gallium arsenide nitride/indium arsenide nitride superlattice lattice matched to indium phosphide for mid-infrared photovoltaics

Science.gov (United States)

Bhusal, Lekhnath

Dilute nitrogen-containing III-V-N alloys have been intensively studied for their unusual electronic and optical behavior in the presence of a small amount of nitrogen. Those behaviors can further be manipulated, with a careful consideration of the strain and strain balancing, for example, in the context of a strain-balanced superlattice (SL) based on those alloys. In this work, the k.p approximation and the band anti-crossing model modified for the strain have been used to describe the electronic states of the strained bulk-like GaAs1-xNx and InAs 1-yNy ternaries in the vicinity of the center of the Brillouin zone (Gamma-point). Band-offsets between the conduction and valence bands of GaAs1-xNx and InAs1-yN y have also been evaluated, before implementing them into the SL structure. By minimizing the total mechanical energy of the stack of the alternating layers of GaAs1-xNx and InAs1-yNy in the SL, the ratio of the thicknesses of the epilayers is determined to make the structure lattice-matching on the InP(001), through the strain-balancing. Mini-band energies of the strain-balanced GaAs1-xNx/InAs 1-yNy short-period SL on InP(001) is then investigated using the transfer matrix formalism. This enabled identifying the evolution of the band edge transition energies of the superlattice structure for different nitrogen compositions. Results show the potential of the new proposed design to exceed the existing limits of bulk-like InGaAsN alloys and offer the applications for photon absorption/emission energies in the range of ~0.65-0.35eV at 300K for a typical nitrogen composition of ≤5%. The optical absorption coefficient of such a SL is then estimated under the anisotropic medium approximation, where the optical absorption of the bulk structure is modified according to the anisotropy imposed by the periodic potential in the growth direction. As an application, the developed SL structure is used to investigate the performance of double, triple and quadruple junction thermophotovoltaic devices. Integration of the SL structure, which is lattice matched to InP, in the i region of the p(InGaAs)- i(SL) n(InGaAs) diode allowed the possibility of more than two junction thermophotovoltiac device with the enhanced performance in comparison to the conventional p(InGaAs)n(InGaAs) diode.

Tumor specific lung cancer diagnostics with multiplexed FRET immunoassays

Science.gov (United States)

Geißler, D.; Hill, D.; Löhmannsröben, H.-G.; Thomas, E.; Lavigne, A.; Darbouret, B.; Bois, E.; Charbonnière, L. J.; Ziessel, R. F.; Hildebrandt, N.

2010-02-01

An optical multiplexed homogeneous (liquid phase) immunoassay based on FRET from a terbium complex to eight different fluorescent dyes is presented. We achieved highly sensitive parallel detection of four different lung cancer specific tumor markers (CEA, NSE, SCC and CYFRA21-1) within a single assay and show a proof-of-principle for 5- fold multiplexing. The method is well suited for fast and low-cost miniaturized point-of-care testing as well as for highthroughput screening in a broad range of in-vitro diagnostic applications.

Design, synthesis and evaluation of carbamoyl-methyl-phosphine sulfide (CMPS)-based chelates for separation of lanthanides and actinides

Energy Technology Data Exchange (ETDEWEB)

Matlokaa, K.; Saha, A.K.; Srinivasan, P.; Scott, M.J. [Florida Univ., Dept. of Chemistry, FL (United States)

2007-10-15

C{sub 3}-symmetric tri-phenoxy-methane platforms were substituted with carbamoyl-methyl-phosphine sulfide arms and these tris-CMPS compounds were evaluated as extractants for f-element metal ions from 1 M nitric acid solution. Their properties were compared to the carbamoyl-methyl-phosphine oxide derivatives on the same tri-phenoxy-methane platform (tris-CMPO). The terbium complex of tris-CMPS was crystallized and examined via X-ray structural analysis to provide valuable insight into the binding properties of the soft tripodal chelate. (authors)

Tritium-Powered Radiation Sensor Network

Science.gov (United States)

2015-09-01

Photomultiplier Tube, Scintillator, Geiger counter, Zigbee, Wireless Network, Radiation detector, Dirty Bomb 16. SECURITY CLASSIFICATION OF: 17...operational lifetime of 150 years. Persistent sensing of the environment with vibration and radiation (electromagnetic [ EM ], acoustic, gamma, etc.) in...Transportation E-field electric field EH electron-hole EM electromagnetic GaAs gallium arsenide GPS global positioning system InGaP indium gallium

Synthesis and characterization of actinide metal compounds formed by combustion

International Nuclear Information System (INIS)

Behrens, R.G.; King, M.A.

1985-01-01

This paper briefly describes the results of attempts to synthesize arsenides, phosphides, and antimonides of uranium and thorium using Self-Propagating High-Temperature Synthesis (SHS) techniques. This paper first summarizes the chemistry and thermodynamics of these chemical systems, describes SHS synthesis techniques, and then describes the results of the syntheses using data from powder x-ray diffraction, metallographic, and electron microprobe analyses

Space-Based Solar Power System Architecture

Science.gov (United States)

2012-12-01

to this thesis, “the Boeing 702 offers a range of power up to 18 kW. Dual and triple -junction gallium arsenide solar cells enable such high power...CONCLUSIONS ........................................................................................................85 A. KEY POINTS AND...USAF. Without the proper starting point and frame of reference, this thesis would not have been possible. Thank you to everyone who had an influence on

500 MHz transient digitizers based on GaAs CCDs

International Nuclear Information System (INIS)

Bryman, D.A.; Constable, M.; Cresswell, J.V.; Daviel, A.; LeNoble, M.; Mildenberger, J.; Poutissou, R.

1996-11-01

A system of 500 MHz transient digitizers based on gallium arsenide resistive gate charged coupled devices has been developed for an experiment studying rare K decays. CCDs with dynamic range of 8-bits and 128 or 320 pixels are used as analog pipelines. The CCD's are driven by a single phase transport system. Data readout and manipulation occurs at 15.6 MHz. (authors)

West Europe Report, Science and Technology

Science.gov (United States)

1986-01-16

according to operational needs in discrete supplies at from 200 to 350 bars. Inventories of the propellants UDMH [unsymmetric dimethylhydrazine] and N5nü...Philips, Siemens and Thomson, on advanced microprocessors, gallium arsenide integrated circuits, microwave components, high- density memories, flat-panel...centers concerned must indicate their desire to associate and regroup themselves according to flexible formulas and variable configurations. In

Coordination chemistry of several radius-sensitive complexones and applications to lanthanide-actinide separations

Energy Technology Data Exchange (ETDEWEB)

Potter, M.W.

1981-10-01

The relationships between the lanthanide complex formation equilibria and the lanthanide-actinide separation application of three radius sensitive ligands have been studied. The consecutive stepwise formation constants of the 1:1, 2:1, and 3:1 chelate species formed by the interaction of DHDMB and the tripositive lanthanides and yttrium were determined potentiometrically at 0.1 M ionic strength and 25/sup 0/C. Results indicate that three different coordination modes, one tridentate and two bidentate are in evidence. Tracer level /sup 241/Am - /sup 155/Eu cation-exchange experiments utilizing DHDMB eluents indicate that this dihydroxycarboxylate does not form a sufficiently strong americium complex to elute that actinide ahead of europium. The overall stability of the americium 3:1 complex appears intermediate between samarium and europium. Cation-exchange elutions of /sup 241/Am, /sup 155/Eu, and /sup 160/Tb mixtures with EEDTA solutions prove that the EEDTA ligand is capable of eluting americium ahead of all of the tripositive lanthanide cations. The minimum separation occurs with terbium, where the Am-Tb separation factor is 1.71. 1,5-diaminopentane-N,N,N',N'-tetraacetic acid (PMDTA) was synthesized using cation exchange. A mathematical method was developed for the formation constants of the protonated and unprotonated lanthanide-PMDTA complexes from potentiometry. Cation-exchange elutions of tracer quantities of Am, Eu, and Tb revealed that terbium is eluted ahead of both americium and europium.

Synthesis and characterization of magnetic nanoparticles of oxides for dual MnFe2O4 bioseparation, stabilized in fatty acid and the system chitosan - Eu(TTA)3(TPPO)2. Studies on the influence of doping with Gd3+, Tb3+, Ho3+ e Eu3+ in structural and magnetic properties

International Nuclear Information System (INIS)

Kovacs, Thelma Antunes Rodrigues

2014-01-01

This work was synthesized and characterized ferrite magnetic nanoparticles manganese, using the chemical coprecipitation method. By varying the heating time under 98°C (0, 10,20,40,60 3 80 minutes), the molar percentage of doping (1, 3, 5, 7, and 10%), gadolinium, europium, terbium and holmium. Magnetic ferrite nanoparticles and manganese ferrite doped with manganese were synthesized by coprecipitation method starting with chloride solutions of metals (iron (III), manganese (II), europium (III), gadolinium (III), terbium (III) and holmium (III)) and NaOH 5mol.L -1 as precipitating agent. The magnetic nanoparticles were characterized by scanning electron microscopy, infrared spectroscopy, X-ray diffraction, magnetization curves, and thermal analysis. Most of manganese ferrite particles showed superparamagnetic behavior. After the characterization it was found that the samples synthesized manganese ferrite with more than 40 minutes heating time, crystal structure showed the characteristic pattern of the inverted manganese ferrite spinel type. The stabilization of the samples in oleic acid nanoparticles produced with a hydrophobic outer layer and facilitated by coating chitosan biopolymer, since this has a positive charge. Among the doped samples there was no significant change in the magnetic behavior. Several techniques for characterizing these materials have been used such as X-ray diffraction spectrum in the infrared region, magnetization curves and thermal analysis. The resins were tested as magnetic material for the separation of biological materials. In this paper, are used as biological targets separation of bovine serum albumin. (author)

Synthesis and characterization of magnetic nanoparticles of oxides for dual MnFe{sub 2}O{sub 4} bioseparation, stabilized in fatty acid and the system chitosan - Eu(TTA){sub 3}(TPPO){sub 2}. Studies on the influence of doping with Gd{sup 3+}, Tb{sup 3+}, Ho{sup 3+} e Eu{sup 3+} in structural and magnetic properties; Sintese e caracterizacao de nanoparticulas magneticas de oxidos duplos de MnFe{sub 2}O{sub 4} para biosseparacao, estabilizadas em acido graxo e recobertas pelo sistema quitosana - Eu(TTA){sub 3}(TPPO){sub 2}. Estudo da influencia da dopagem com Gd{sup 3+}, Tb{sup 3+}, Ho{sup 3+} e Eu{sup 3+} nas propriedades estruturais e magneticas

Energy Technology Data Exchange (ETDEWEB)

Kovacs, Thelma Antunes Rodrigues

2014-07-01

This work was synthesized and characterized ferrite magnetic nanoparticles manganese, using the chemical coprecipitation method. By varying the heating time under 98°C (0, 10,20,40,60 3 80 minutes), the molar percentage of doping (1, 3, 5, 7, and 10%), gadolinium, europium, terbium and holmium. Magnetic ferrite nanoparticles and manganese ferrite doped with manganese were synthesized by coprecipitation method starting with chloride solutions of metals (iron (III), manganese (II), europium (III), gadolinium (III), terbium (III) and holmium (III)) and NaOH 5mol.L{sup -1} as precipitating agent. The magnetic nanoparticles were characterized by scanning electron microscopy, infrared spectroscopy, X-ray diffraction, magnetization curves, and thermal analysis. Most of manganese ferrite particles showed superparamagnetic behavior. After the characterization it was found that the samples synthesized manganese ferrite with more than 40 minutes heating time, crystal structure showed the characteristic pattern of the inverted manganese ferrite spinel type. The stabilization of the samples in oleic acid nanoparticles produced with a hydrophobic outer layer and facilitated by coating chitosan biopolymer, since this has a positive charge. Among the doped samples there was no significant change in the magnetic behavior. Several techniques for characterizing these materials have been used such as X-ray diffraction spectrum in the infrared region, magnetization curves and thermal analysis. The resins were tested as magnetic material for the separation of biological materials. In this paper, are used as biological targets separation of bovine serum albumin. (author)

Temperature and concentration quenching of Tb3+ emissions in Y4Al2O9 crystals

International Nuclear Information System (INIS)

Boruc, Z.; Fetlinski, B.; Kaczkan, M.; Turczynski, S.; Pawlak, D.; Malinowski, M.

2012-01-01

Highlights: ► Spectroscopic properties of Tb 3+ :Y 4 Al 2 O 9 crystals are studied. ► Concentration and temperature dependencies of fluorescence are investigated. ► The cross-relaxation transfer rates are experimentally determined. ► Strong influence of cross relaxation process on 5 D 3 emission quenching is observed. ► Decays are modelled using Inokuti–Hirayama approach. - Abstract: Spectroscopic properties of trivalent terbium (Tb 3+ ) activated Y 4 Al 2 O 9 (abbreviated YAM) crystals were studied. Concentration and temperature dependent emission spectra and fluorescence dynamics profiles have been investigated in YAM:Tb 3+ in order to understand better processes responsible for quenching of the terbium 5 D 3 and 5 D 4 emissions. Decays were modelled using Inokuti–Hirayama approach to obtain information on the energy transfer mechanism. The cross-relaxation transfer rates were experimentally determined as a function of temperature and Tb 3+ concentration. The investigation revealed strong influence of cross-relaxation process on 5 D 3 emission quenching. The two different processes responsible for the increase of fluorescence quenching with growing temperature were observed, both related to thermal activation energy. For temperatures above 700 K, the temperature dependence of the emission intensity ratio ( 5 D 3 / 5 D 4 ) becomes linear and the decay times are rapidly decreasing monotonously with increasing temperature, what is confirming the potential of Y 4 Al 2 O 9 :Tb 3+ material in high temperature luminescence thermometry.

Influence of the atomic force microscope tip on the multifractal analysis of rough surfaces

International Nuclear Information System (INIS)

Klapetek, Petr; Ohlidal, Ivan; Bilek, Jindrich

2004-01-01

In this paper, the influence of atomic force microscope tip on the multifractal analysis of rough surfaces is discussed. This analysis is based on two methods, i.e. on the correlation function method and the wavelet transform modulus maxima method. The principles of both methods are briefly described. Both methods are applied to simulated rough surfaces (simulation is performed by the spectral synthesis method). It is shown that the finite dimensions of the microscope tip misrepresent the values of the quantities expressing the multifractal analysis of rough surfaces within both the methods. Thus, it was concretely shown that the influence of the finite dimensions of the microscope tip changed mono-fractal properties of simulated rough surface to multifractal ones. Further, it is shown that a surface reconstruction method developed for removing the negative influence of the microscope tip does not improve the results obtained in a substantial way. The theoretical procedures concerning both the methods, i.e. the correlation function method and the wavelet transform modulus maxima method, are illustrated for the multifractal analysis of randomly rough gallium arsenide surfaces prepared by means of the thermal oxidation of smooth gallium arsenide surfaces and subsequent dissolution of the oxide films

Local emission spectroscopy of surface micrograins in A{sup III}B{sup V} semiconductors

Energy Technology Data Exchange (ETDEWEB)

Zhukov, N. D., E-mail: ndzhukov@rambler.ru; Gluhovskoy, E. G.; Mosiyash, D. S. [Saratov State University (Russian Federation)

2016-07-15

The density-of-states spectra and the parameters of levels of electron states in locally chosen surface micrograins of indium antimonide and arsenide and gallium arsenide are studied with a tunneling electron microscope in the field-emission mode of measurements. By correlating the current–voltage characteristics with the formula for the probability of emission via levels, the activation energies of the levels (ψ) and the lifetimes of electrons at the levels (τ) are determined. Two types of levels for electron localization are identified. These are levels in the micrograin bulk (ψ ≈ 0.75, 1.15, and 1.59 eV for n-InSb, n-InAs, and n-GaAs, respectively; τ ~ 10{sup –8}–10{sup –7} s) and in the surface region of an i-InSb micrograin (ψ ~ 0.73, 1.33, 1.85, 2.15, 5.1 eV; τ ≈ 5 × 10{sup –8}–3 × 10{sup –7} s). A physical model involving the Coulomb-interaction-induced localization of light electrons and their size quantization determined by the electron effective mass, energy, and concentration and by the surface curvature of the micrograin is proposed.

Radiation annealing of gallium arsenide implanted with sulphur

CERN Document Server

Ardyshev, V M

2002-01-01

Sulfur ions were implanted in a semi-insulating GaAs. Photon annealing (805 deg C/(10-12) s) and the thermal one (800 deg C/30 min) were conducted under SiO sub 2 -films coating obtained by different ways. Contents of GaAs components in films were determined from Rutherford backscattering spectra; concentration profiles of electrons were measured by the voltage-capacitance method. Diffusion of sulfur was shown to go in two directions - to the surface and into bulk of GaAs. The first process was induced by vacancies that had been formed near the surface of semiconductors during the dielectric coating. The coefficient of the bulk-diffusion and diffusion-to-surface of sulfur ions under photon annealing was twice as much as that under thermal one. The doping efficiency was also larger

Shallow doping of gallium arsenide by recoil implantation

International Nuclear Information System (INIS)

Sadana, D.K.; Souza, J.P. de; Rutz, R.F.; Cardone, F.; Norcott, M.H.

1989-01-01

Si atoms were recoil-implanted into GaAs by bombarding neutral (As + ) or dopant (Si + ) ions through a thin Si cap. The bombarded samples were subsequently rapid thermally or furnace annealed at 815-1000 degree C in Ar or arsine ambient. The presence of the recoiled Si in GaAs and resulting n + -doping was confirmed by secondary ion mass spectrometry and Hall measurements. It was found that sheet resistance of 19 cm 3 and the annealing temperature was > 850 degree C. The present electrical data show that the recoil implant method is a viable alternative to direct shallow implant for n + doping of GaAs. 7 refs., 3 figs., 1 tab

Ultrafast Time-Resolved Photoluminescence Studies of Gallium-Arsenide

Science.gov (United States)

Johnson, Matthew Bruce

This thesis concerns the study of ultrafast phenomena in GaAs using time-resolved photoluminescence (PL). The thesis consists of five chapters. Chapter one is an introduction, which discusses the study of ultrafast phenomena in semiconductors. Chapter two is a description of the colliding-pulse mode-locked (CPM) ring dye laser, which is at the heart of the experimental apparatus used in this thesis. Chapter three presents a detailed experimental and theoretical investigation of photoluminescence excitation correlation spectroscopy (PECS), the novel technique which is used to time-resolve ultrafast PL phenomena. Chapters 4 and 5 discuss two applications of the PECS technique. In Chapter 4 the variation of PL intensity in In-alloyed GaAs substrate material is studied, while Chapter 5 discusses the variation of carrier lifetimes in ion-damaged GaAs used in photo-conductive circuit elements (PCEs). PECS is a pulse-probe technique that measures the cross correlation of photo-excited carrier populations. The theoretical model employed in this thesis is based upon the rate equation for a simple three-level system consisting of valence and conduction bands and a single trap level. In the limit of radiative band-to-band dominated recombination, no PECS signal should be observed; while in the capture -dominated recombination limit, the PECS signal from the band-to-band PL measures the cross correlation of the excited electron and hole populations and thus, the electron and hole lifetimes. PECS is experimentally investigated using a case study of PL in semi-insulating (SI) GaAs and In -alloyed GaAs. At 77 K, the PECS signal is characteristic of a capture-dominated system, yielding an electron-hole lifetime of about 200 ps. However, at 5 K the behavior is more complicated and shows saturation effects due to the C acceptor level, which is un-ionized at 5 K. As a first application, PECS is used to investigate the large band-to-band PL contrast observed near dislocations in In-alloyed GaAs. It is found that the PL intensity contrast between bright and dark areas correlates with the ratio of the lifetimes measured using PECS in these areas. Thus, the PL intensity contrast is due to the difference in the carrier lifetimes in the different regions. The carrier lifetimes in the bright and dark regions have different temperature dependences. (Abstract shortened with permission of author.).

Sources of spontaneous emission based on indium arsenide

International Nuclear Information System (INIS)

Zotova, N. V.; Il'inskaya, N. D.; Karandashev, S. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.

2008-01-01

The results obtained for light-emitting diodes based on heterostructures that contain InAs in the active region and are grown by the methods of liquid-phase, molecular-beam, and vapor-phase epitaxy from organometallic compounds are reviewed. The emission intensity, the near-field patterns, and the light-current and current-voltage characteristics of light-emitting diodes that have flip-chip structure or feature a point contact are analyzed.

Sources of spontaneous emission based on indium arsenide

Energy Technology Data Exchange (ETDEWEB)

Zotova, N V; Il' inskaya, N D; Karandashev, S A; Matveev, B. A., E-mail: bmat@iropt3.ioffe.rssi.ru; Remennyi, M A; Stus' , N M [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

2008-06-15

The results obtained for light-emitting diodes based on heterostructures that contain InAs in the active region and are grown by the methods of liquid-phase, molecular-beam, and vapor-phase epitaxy from organometallic compounds are reviewed. The emission intensity, the near-field patterns, and the light-current and current-voltage characteristics of light-emitting diodes that have flip-chip structure or feature a point contact are analyzed.

Superlattice Intermediate Band Solar Cell on Gallium Arsenide

Science.gov (United States)

2015-02-09

13  Figure 11. (a) Contour plot of device EOL efficiency as a function of emitter and i-region thickness for a 1MeV electron...fluence dose of 2x1015cm-2 (b) EOL I-V characteristic of the device...expanded our simulations to include the effect of radiation degradation to assess the end of life ( EOL ) efficiencies of these devices in space. Figure 10

Temperature dependence of electron concentration in cadmium arsenide

NARCIS (Netherlands)

Gelten, M.J.; Blom, F.A.P.

1979-01-01

From measurements of the temperature dependence of the electron concentration in Cd 3 As 2 , we found values for the conduction-band parameters that are in good agreement with those recently reported by Aubin, Caron, and Jay-Gerin. However, in contrast with these authors we found no small overlap,

Multifunctional homojunction gallium arsenide n–p–m-structure

Directory of Open Access Journals (Sweden)

Karimov A. V.

2009-11-01

Full Text Available The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are analyzed depending on the mode of inclusion. It is shown the multifunctionality of offered homojunction structure that is perspective for creating the optical receiver or the optical transformer.

Modelling of curium and americium behaviour during separation with displacing complexing chromatography

International Nuclear Information System (INIS)

Chuveleva, Eh.A.; Kharitonov, O.V.; Firsova, L.A.

1994-01-01

Certain heavy rare earths, curium and americium were separated by the method of displacement complexing chromatography using DTPA solutions and solutions containing DTPA and citric acid as eluents. Separation factors of rare earths and curium (americium) were calculated. Imitators for curium and americium separation were suggested: thulium for curium elution using 0.025 mol/l DTPA, holmium-for curium elution using 0.025 mol/l DTPA in the presence of 0.025 mol/l citric acid; terbium can serve as the imitator in both cases. 5 refs., 5 figs

Size matters: nanoparticles in cancer therapy

International Nuclear Information System (INIS)

Khullar, Bhavya; Iqbal, Sarah

2016-01-01

Scientists at the CSIR-National Chemical Laboratory, Pune, in collaboration with universities in Lucknow and Aligarh, synthesized terbium oxide (Tb_2O_3) nanoparticles by putting a naturally occurring fungus into action. Commercially available Tb_4O_7 is reduced to Tb_2O_3 by incubating it with a suspension of Fusarium oxysporum in controlled conditions of pH and temperature. The aqueous crystals of Tb_2O_3, isolated from the fungal suspension, were stable and did not form aggregates or clumps. Hence, they could be isolated as crystals with long-term stability

Neutron activation analysis of the rare earth elements in Nasu hot springs

International Nuclear Information System (INIS)

Ikeda, Nagao; Takahashi, Naruto.

1978-01-01

Eleven rare earth elements (lanthanum, cerium, neodymium, samarium, europium, gadolinium, terbium, holmium, thulium, ytterbium and lutetium) in hot spring waters and sinter deposits in the Nasu area were determined by the neutron activation method. The rare earth elements in hot spring water were preconcentrated in ferric hydroxide precipitate and neutron-irradiated. The rare earth elements were chemically separated into lighter and heavier groups and the activity of each group was measured with a Ge(Li) detector. Distribution of the rare earth elements between the hot spring water and the sinter deposit was also discussed. (auth.)

Time-resolved fluoroimmunoassay of phytoviruses by monoclonal antibodies. Vremenno-razreshennyj fluoroimmunoanaliz fitovirusos pri pomoshchi monoklonal'nykh antitel

Energy Technology Data Exchange (ETDEWEB)

Saarma, M Yu; Yarvekyul' g, L V; Andreeva, E G; Siniyarv, R K

1989-01-01

Monoclonal antibodies (MAbs) to potato viruses were labelled with lanthanides and used for time-resolved fluoroimmunoassay (TRFIA) of these viruses. TRFIA of potato leafroll virus (PLRV) had the sensitivity less than 1 ng/ml and was therefore approx 10 times more sensitive than ELISA. Possibility of simultaneous quantitative detection of several viruses by different MAbs labelled with europium, samarium and terbium provides TRFIA of fundamental advantage. Data on simultaneous sensitive detection of two viruses - PLRV and PVX (0,5 ng/ml of both) and three viruses - PLRV, PVX and PVM are given.

Organometallic compounds of the 2-6 group elements of periodic system as perspective substances for microelectrnics

International Nuclear Information System (INIS)

Fedorov, V.A.

1986-01-01

Results of investigating methods of preparation and analysis of organometallic compounds (OMC) of the 2B-6B group elements, behaviour of microimpurities in the process of their complete purification, physical-chemical properties for developing rational flowsheets of OMC purification are presented. Results of microimpurities quantitative transition from OMC to gallium arsenide epitaxial layers are presented. Prospects for OMC application in microelectronics are discussed

Thermionic photovoltaic energy converter

Science.gov (United States)

Chubb, D. L. (Inventor)

1985-01-01

A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

Low power laser irradiation does not affect the generation of signals in a sensory receptor

Energy Technology Data Exchange (ETDEWEB)

Lundeberg, T.; Zhou, J.

1989-01-01

The effect of low power Helium-Neon (He-Ne) and Gallium-Arsenide (Ga-As) laser on the slowly adapting crustacean stretch receptor was studied. The results showed that low power laser irradiation did not affect the membrane potential of the stretch receptor. These results are discussed in relation to the use of low power laser irradiation on the skin overlaying acupuncture points in treatment of pain syndrome.

Results from the high efficiency solar panel experiment flown on CRRES

International Nuclear Information System (INIS)

Ray, K.P.; Mullen, E.G.; Trumble, T.M.

1993-01-01

This paper presents results from the High Efficiency Solar Panel Experiment (HESP) flown on the Combined Release and Radiation Effects Satellite (CRRES). The on-orbit solar cell degradation is correlated with the proton and electron environments. Comparisons between gallium arsenide germanium (GaAs/Ge) and silicon (Si) solar cells are presented, and results from three different annealing methods of like GaAs solar cells are compared

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

Science.gov (United States)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

Proceedings of the Fiber Optics in the Nuclear Environment Symposium 25-27 March 1980. Volume II. Radiation Physics,

Science.gov (United States)

1980-04-30

800 900 1000 Wavelength (nm) 4. Comparison of material dispersion characteristic between Corning and ITT graded index fiber. 170 _0 10 e 1060 mn Corning...Accelerator (REBA) subjected this device and conmercially available photodiodes (made from silicon, germanium, and indium gallium arsenide phosphide ) to...of wavelength and is shown in Fig. 2. Since approximately one-third of the incident light is reflected at the top surface due to index of refraction

1997 IEEE/LEOS Summer Topical Meeting on Gallium Nitride Materials, Processing and Devices Held in Montreal, Quebec, Canada on 11-15 August 1997

Science.gov (United States)

1998-01-01

refractive index differences in the two branches, their respective dispersion curves will intersect at a certain wavelength, according to our design...wavelengths, DBRs are usually grown lattice- matched to InP using quaternary and ternary phosphide alloys in spite of the low refractive in- dex...validating the refractive index model. In a third step, mirrors based on arsenide-antimonide materials were designed to operate at 1.3 ^.m

Space and Missile Systems Center Standard: Technical Requirements for Electronic Parts, Materials, and Processes used in Space Vehicles

Science.gov (United States)

2013-04-12

glass or oxide passivation over junctions . 4.3 Screening (100 percent). Screening (100 percent) shall be in accordance with section 1400 for the JAN...75 VCE = 75 IC = 75 VCE = 75 IC = 75 Hetero - junction Bipolar Transistor Gallium Arsenide 3/ 105 125 N/A N/A 75 75 Current...HDBK-339 Custom Large Scale Integrated Circuit Development and Acquisition for Space Vehicles MIL-STD-403C Preparation for and Installation of

Terahertz Technology for Defense and Security-Related Applications

OpenAIRE

Iwaszczuk, Krzysztof; Jepsen, Peter Uhd; Heiselberg, Henning

2012-01-01

Denne afhandling omhandler udvalgte aspekter af terahertz (THz) teknologi med potentiale i forsvars- og sikkerheds-relaterede applikationer. En ny metode til samtidig dataopsamling i tidsopløst THz spektroskopi eksperimenter er blevet udviklet. Denne teknik demonstreres ved bestemmelse af fladekonduktiviteten af fotogenererede ladningsbrere i semiisolerende gallium arsenid. En sammenligning med resultater opnået ved hjælp af en standard dataopsamlingsprocedure viser at den nye metode minimere...

Potential means of support for materials processing in space. A history of government support for new technology

Science.gov (United States)

Mckannan, E. C.

1983-01-01

Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

The growth of materials processing in space - A history of government support for new technology

Science.gov (United States)

Mckannan, E. C.

1983-01-01

Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

500 MHz transient digitizers based on GaAs CCDs

Energy Technology Data Exchange (ETDEWEB)

Bryman, D A; Constable, M; Cresswell, J V; Daviel, A; LeNoble, M; Mildenberger, J; Poutissou, R

1996-11-01

A system of 500 MHz transient digitizers based on gallium arsenide resistive gate charged coupled devices has been developed for an experiment studying rare K decays. CCDs with dynamic range of 8-bits and 128 or 320 pixels are used as analog pipelines. The CCD`s are driven by a single phase transport system. Data readout and manipulation occurs at 15.6 MHz. (authors). 12 refs., 15 figs.

Ab initio study of hot electrons in GaAs

OpenAIRE

Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B.; Louie, Steven G.

2015-01-01

Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation...

Field-impressed anisotropy of susceptibility in iron-terbium thin films

International Nuclear Information System (INIS)

Stephenson, A.; Booth, N.A.

1995-01-01

Two thin films of Fe 1-x Tb x where x=0.17 and 0.23 are shown to exhibit the effect of field-impressed anisotropy. After application of a direct field of 80 mT, which gives them an isothermal remanent magnetization (IRM) in their plane, the anisotropy of initial susceptibility differs from that measured after the films have been tumble-demagnetized. By subtracting the susceptibility results of the tumble-demagnetized state from those obtained after the application of the 80 mT direct field, it is shown that the effect of this field is to decrease the susceptibility measured along the former applied field direction and to increase the susceptibility at right angles to this. The effect is almost certainly due to changes in domain alignment. Even though these films contain many domains, the above results are similar to those previously obtained for single-domain γFe 2 O 3 and magnetite particles. The sense of the effect is opposite to that for multi-domain magnetite particles where the susceptibility has been found to increase along the previously applied field direction. ((orig.))

Optical lines in europium-terbium double activated calcium tungstate phosphor

Energy Technology Data Exchange (ETDEWEB)

Nazarov, M.V. [Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Tsukerblat, B.S. [Department of Chemistry, Ben-Gurion University of the Negev, 84105 Beer-Sheva (Israel)]. E-mail: tsuker@bgumail.bgu.ac.il; Popovici, E.-J. [' Raluca Ripan' Institute for Research in Chemistry, Cluj-Napoca (Romania); Jeon, D.Y. [Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2004-09-20

The Letter is devoted to the problem of the optical anisotropy of the rare-earth ions occupying low-symmetry positions in crystals. The crystal field multiplets arising from LSJ terms of Eu{sup 3+} and Tb{sup 3+} ions in the crystal field of calcium tungstate scheelite (CaWO{sub 4}) are analyzed with regard to the experimental data on the low temperature photoluminescence and cathodoluminescence spectra. The selection rules as well as an angular (polarization) dependence of the two-photon absorption are discussed.

High pressure phases of terbium: Possibility of a thcp phase

International Nuclear Information System (INIS)

Staun Olsen, J.; Steenstrup, S.; Gerward, L.

1985-01-01

High pressure phases of trivalent Tb studied by energy dispersive X-ray diffraction with synchrotron radiation exhibits the closed packed sequence (hcp -> Sm -> dhcp -> fcc) typical of the trivalent rare earth metals. Furthermore, a phase consistent with a triple hexagonal closed packed (thcp) structure was observed in a narrow pressure range around 30 GPa. (orig.)

A luminescence-based probe for sensitive detection of hydrogen peroxide in seconds

International Nuclear Information System (INIS)

Zscharnack, Kristin; Kreisig, Thomas; Prasse, Agneta A.; Zuchner, Thole

2014-01-01

Highlights: • We describe a novel probe for the sensitive detection of H 2 O 2 . • H 2 O 2 quenches the luminescence of a complex consisting of phthalic acid and terbium ions. • A stable fluorescence signal is generated immediately after mixing probe and sample. • The PATb probe detects H 2 O 2 over four orders of magnitude. - Abstract: Here, we present a fast and simple hydrogen peroxide assay that is based on time-resolved fluorescence. The emission intensity of a complex consisting of terbium ions (Tb 3+ ) and phthalic acid (PA) in HEPES buffer is quenched in the presence of H 2 O 2 and this quenching is concentration-dependent. The novel PATb assay detects hydrogen peroxide at a pH range from 7.5 to 8.5 and with a detection limit of 150 nmol L −1 at pH 8.5. The total assay time is less than 1 min. The linear range of the assay can be adapted by a pH adjustment of the aqueous buffer and covers a concentration range from 310 nmol L −1 to 2.56 mmol L −1 in total which encompasses four orders of magnitude. The assay is compatible with high concentrations of all 47 tested inorganic and organic compounds. The PATb assay was applied to quantify H 2 O 2 in polluted river water samples. In conclusion, this fast and easy-to-use assay detects H 2 O 2 with high sensitivity and precision

Study of the absorption and energy transfer processes in inorganic luminescent materials in the UV and VUV region

International Nuclear Information System (INIS)

Mayolet, A.

1995-01-01

In order to find a green emitting phosphor showing high quantum efficiency and a short decay time which can be used in the color Plasma Display Panels developed by Thomson-TTE-TIV company, a VUV spectrophotometer built at IPN Orsay, using the synchrotron radiation from the SUPER-ACO storage ring as an excitation source, allow us the simultaneous recording of the luminescence excitation and diffuse reflectivity spectra of the inorganic compounds in the UV-VUV range. In addition, this experimental set-up enable us to determine the luminescence quantum efficiency of phosphors in the whole energy range of investigation. The chemical synthesis of rare-earth ortho-- and metaborate and rare-earth ortho- and metaphosphate doped with trivalent lanthanide ions cerium, praseodymium, europium and terbium have been made. The energy variation of the thresholds of the luminescence excitation mechanisms in function of the nature and the structure of the host matrix is discussed. We have determined the influence of the nephelauxetic effect and the crystal field intensity on the energy of the f-d inter-configuration transitions. The variation of the luminescence quantum efficiency of the dopant ion is interpreted through the 'impurity bound exciton' model. The systematic comparison of the cerium and terbium trivalent ions spectroscopic properties in the Y(AG)G host lattice series stands to reason that the self-ionized state of the luminescent center plays an important role in the rate of the non radiative relaxation. It is the redox power of the host matrix which imposes to the luminescent center, the energy of this state. (author)

Study of the absorption and energy transfer processes in inorganic luminescent materials in the UV and VUV region; Etude des processus d`absorption et de transfert d`energie au sein de materiaux inorganiques luminescents dans le domaine UV et VUV

Energy Technology Data Exchange (ETDEWEB)

Mayolet, A

1995-11-29

In order to find a green emitting phosphor showing high quantum efficiency and a short decay time which can be used in the color Plasma Display Panels developed by Thomson-TTE-TIV company, a VUV spectrophotometer built at IPN Orsay, using the synchrotron radiation from the SUPER-ACO storage ring as an excitation source, allow us the simultaneous recording of the luminescence excitation and diffuse reflectivity spectra of the inorganic compounds in the UV-VUV range. In addition, this experimental set-up enable us to determine the luminescence quantum efficiency of phosphors in the whole energy range of investigation. The chemical synthesis of rare-earth ortho-- and metaborate and rare-earth ortho- and metaphosphate doped with trivalent lanthanide ions cerium, praseodymium, europium and terbium have been made. The energy variation of the thresholds of the luminescence excitation mechanisms in function of the nature and the structure of the host matrix is discussed. We have determined the influence of the nephelauxetic effect and the crystal field intensity on the energy of the f-d inter-configuration transitions. The variation of the luminescence quantum efficiency of the dopant ion is interpreted through the `impurity bound exciton` model. The systematic comparison of the cerium and terbium trivalent ions spectroscopic properties in the Y(AG)G host lattice series stands to reason that the self-ionized state of the luminescent center plays an important role in the rate of the non radiative relaxation. It is the redox power of the host matrix which imposes to the luminescent center, the energy of this state. (author) 134 refs.

Design of Indium Arsenide nanowire sensors for pH and biological sensing and low temperature transport through p-doped Indium Arsenide nanowires

DEFF Research Database (Denmark)

Upadhyay, Shivendra

With the goal of real time electrical detection of chemical and biological species, nanowires have shown great promise with high sensitivity due to their large surface to volume ratio. While the focus of such electrical detection has shifted to one dimensional semiconductor nanostuctures, Silicon...

Multiband Gutzwiller theory of the band magnetism of LaO iron arsenide; Multiband Gutzwiller-Theorie des Bandmagnetismus von LaO-Eisen-Arsenid

Energy Technology Data Exchange (ETDEWEB)

Schickling, Tobias

2012-02-23

In this work we apply the Gutzwiller theory for various models for LaOFeAs. It was discovered in 2008 that doped LaOFeAs is superconducting below a temperature of T{sub c} = 28 K. Soon after that discovery, more iron based materials were found which have an atomic structure that is similar to the one of LaOFeAs and which are also superconducting. These materials form the class of iron-based superconductors. Many properties of this material class are in astonishing agreement with the properties of the cuprates. Therefore, studying this new material may promote our understanding of high-T{sub c} superconductivity. Despite great efforts, however, Density Functional Theory calculations cannot reproduce the small magnetic moment in the ground state of undoped LaOFeAs. Such calculations overestimate the magnetic moment by a factor 2-3. Within our Gutzwiller approach, we take additional local Coulomb correlations into account. We show that it is necessary to work with the iron 3d-orbitals and the arsenic 4p-orbitals to obtain a realistic description of LaOFeAs. For a broad parameter regime of the electronic interactions, we find a magnetic moment that is in the region of the experimentally observed values. We claim that the magnetic phase in LaOFeAs can be described as a spin-density wave of Landau-Gutzwiller quasi-particles.

Polarized neutron study of TbNi2

International Nuclear Information System (INIS)

Givord, D.; Givord, F.; Gignoux, D.; Koehler, W.C.; Moon, R.M.

1976-01-01

Neutron diffraction experiments have been carried out on a TbNi 2 single crystal. Below the Curie temperature, 42 K, a magnetic contribution is observed only on nuclear scattering peaks. Therefore, the terbium atoms form a ferromagnetic structure. Polarized neutron measurements performed in the paramagnetic state, in an applied magnetic field of 57 kOe, reveal a non-uniform polarization of the conduction band. Within the experimental accuracy, no 3d magnetic moment is observed on nickel atoms. This result is consistent with the assumption of rare earth magnetic ordering occurring through the polarization of conduction electrons. (author)

Determination of Rare Earth Elements in plants by neutron activation analysis

International Nuclear Information System (INIS)

Figueiredo, Ana M.G.; Maria, Sheila P.; Ceccantini, Gregorio C.T.

1996-01-01

In the present work, instrumental neutron activation analysis was employed to the determination of rare earth elements (La, Ce, Nd, Eu, Tb, Yb e Lu) in plants, aiming biogeochemical studies. The precision and accuracy of the method were verified by the analysis of the reference materials Citrus Leaves (NIST 1572) and Pine Needles (NIST 1575). With exception of terbium, the results obtained agreed with reference values, giving relative errors less than 25%. The method was applied to different species of plants growing in the alkaline-ultramafic complex of Salitre, MG and the obtained data were compared to the average content in plants. (author)

The condition for electroplex emission from an europium complex doped poly( N-vinylcarbazole)

Science.gov (United States)

Zhang, T.; Xu, Z.; Qian, L.; Tao, D. L.; Teng, F.; Gao, X.; Xu, X. R.

2005-10-01

Spectral characteristics of photoluminescence (PL) and electroluminescence (EL) of poly( N-vinylcarbazole) (PVK) matrices doped with a novel europium complex Eu(aspirin) 3phen were investigated. A red-shift and broadening were observed in the EL spectra but not in the PL ones. However, neither red-shift nor broadening were observed in the EL spectra of PVK doped with a similar complex with the same ligand, terbium complex (Tb(aspirin) 3phen). This result suggests the formation of electroplexes in blend systems, which is likely due to inefficient energy transfer from host molecules to dopant molecules.

Hybrid solar collector using nonimaging optics and photovoltaic components

Science.gov (United States)

Winston, Roland; Yablonovitch, Eli; Jiang, Lun; Widyolar, Bennett K.; Abdelhamid, Mahmoud; Scranton, Gregg; Cygan, David; Kozlov, Alexandr

2015-08-01

The project team of University of California at Merced (UC-M), Gas Technology Institute, and Dr. Eli Yablonovitch of University of California at Berkeley developed a novel hybrid concentrated solar photovoltaic thermal (PV/T) collector using nonimaging optics and world record single-junction Gallium arsenide (GaAs) PV components integrated with particle laden gas as thermal transfer and storage media, to simultaneously generate electricity and high temperature dispatchable heat. The collector transforms a parabolic trough, commonly used in CSP plants, into an integrated spectrum-splitting device. This places a spectrum-sensitive topping element on a secondary reflector that is registered to the thermal collection loop. The secondary reflector transmits higher energy photons for PV topping while diverting the remaining lower energy photons to the thermal media, achieving temperatures of around 400°C even under partial utilization of the solar spectrum. The collector uses the spectral selectivity property of Gallium arsenide (GaAs) cells to maximize the exergy output of the system, resulting in an estimated exergy efficiency of 48%. The thermal media is composed of fine particles of high melting point material in an inert gas that increases heat transfer and effectively stores excess heat in hot particles for later on-demand use.

Generalized Synthesis of EAs [E = Fe, Co, Mn, Cr] Nanostructures and Investigating Their Morphology Evolution

Directory of Open Access Journals (Sweden)

P. Desai

2015-01-01

Full Text Available This paper illustrates a novel route for the synthesis of nanostructured transition metal arsenides including those of FeAs, CoAs, MnAs, and CrAs through a generalized protocol. The key feature of the method is the use of one-step hot-injection and the clever use of a combination of precursors which are low-melting and highly reactive such as metal carbonyls and triphenylarsine in a solventless setup. This method also facilitates the formation of one-dimensional nanostructures as we move across the periodic table from CrAs to CoAs. The chemical basis of this reaction is simple redox chemistry between the transition metals, wherein the transition metal is oxidized from elemental state (E0 to E3+in lieu of reduction of As3+ to As3−. While the thermodynamic analysis reveals that all these conversions are spontaneous, it is the kinetics of the process that influences morphology of the product nanostructures, which varies from extremely small nanoparticles to nanorods. Transition metal pnictides show interesting magnetic properties and these nanostructures can serve as model systems for the exploration of their intricate magnetism as well as their applications and can also function as starting materials for the arsenide based nanosuperconductors.

Design and simulation of nanoscale double-gate TFET/tunnel CNTFET

Science.gov (United States)

Bala, Shashi; Khosla, Mamta

2018-04-01

A double-gate tunnel field-effect transistor (DG tunnel FET) has been designed and investigated for various channel materials such as silicon (Si), gallium arsenide (GaAs), alminium gallium arsenide (Al x Ga1‑x As) and CNT using a nano ViDES Device and TCAD SILVACO ATLAS simulator. The proposed devices are compared on the basis of inverse subthreshold slope (SS), I ON/I OFF current ratio and leakage current. Using Si as the channel material limits the property to reduce leakage current with scaling of channel, whereas the Al x Ga1‑x As based DG tunnel FET provides a better I ON/I OFF current ratio (2.51 × 106) as compared to other devices keeping the leakage current within permissible limits. The performed silmulation of the CNT based channel in the double-gate tunnel field-effect transistor using the nano ViDES shows better performace for a sub-threshold slope of 29.4 mV/dec as the channel is scaled down. The proposed work shows the potential of the CNT channel based DG tunnel FET as a futuristic device for better switching and high retention time, which makes it suitable for memory based circuits.

Super-Planckian Thermophotovoltaics Without Vacuum Gaps

Science.gov (United States)

Mirmoosa, M. S.; Biehs, S.-A.; Simovski, C. R.

2017-11-01

We introduce the concept of a thermophotovoltaic system whose emitter is separated from the photovoltaic cell by an intermediate thick slab of gallium arsenide. Owing to the engineered structure of the emitter (a multilayer structure of negative- and positive-ɛ layers) together with a high refractiveindex and transparency of the intermediate slab, we achieve a super-Planckian and frequency-selective spectrum of radiative heat transfer which is desirable for the efficient performance of thermophotovoltaic systems.

Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary

Science.gov (United States)

1984-01-01

The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

High-Temperature Superconductivity in Doped BaFe2As2

International Nuclear Information System (INIS)

Martin, Marianne

2011-01-01

This thesis provides a detailed look on the synthesis, structural features and physical properties of iron arsenides. Especially the properties of BaFe 2 As 2 and the solid solutions (Ba 1-x K x )Fe 2 As 2 , (Ba 1-x Sr x )Fe 2 As 2 and BaFe 2 (As 1-x P x ) 2 which were all synthesized by solid state reactions by heating mixtures of the elements, were intensively investigated.

Investigation and Development of Advanced Surface Microanalysis Techniques and Methods

Science.gov (United States)

1983-04-01

California 94402 and Stephen L. Grube Watkins-Johnson 440 Kings Village Road Scotts Valley, California 95066 as published in Analytical Chemistry , 1985, 57...34 E. Silberg , T. Y. Chang, E. A. Caridi, C. A. Evans Jr. and C. J. Hitzman in Gallium Arsenide and Related Compounds 1982, 10th International Symposium...Spectrometry," P. K. Chu and S. L. Grube, Analytical Chemistry . 13. "Direct Lateral and In-Depth Distributional Analysis for Ionic - Contaminants in

Supralinear photoconductivity of copper doped semi-insulating gallium arsenide

Science.gov (United States)

Schoenbach, K. H.; Joshi, R. P.; Peterkin, F.; Druce, R. L.

1995-05-01

The high gain effect was shown to be a threshold effect and was dependent on the photoactivation energy level. For the studied material, laser energy densities in the order of 10 mJ cm(sup - 2) for a laser pulse duration of 200 ps were needed to switch into the high gain mode. The observed supralinear behavior of the peak photoconductivity and the charge carrier lifetime can be accounted by the shifts in quasi Fermi levels and the occupancy of copper states within the forbidden gap. Numerical simulations were also presented that yielded quantitative values for the trapping cross sections and recombination center densities. From the perspective of applications, the GaAs:Si:Cu material had great potential for high-power repetitive switching and photodetection.

Supralinear photoconductivity of copper doped semi-insulating gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Schoenbach, K.H.; Joshi, R.P.; Peterkin, F. [Physical Electronics Research Institute, Old Dominion University, Norfolk, Virginia 23529 (United States); Druce, R.L. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

1995-05-15

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low-energy phototransistor application for the GaAs:Cu material system is presented. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Nanoscale characterisation of electronic and spintronic nitrides and arsenides

International Nuclear Information System (INIS)

Fay, M W; Han, Y; Edmonds, K W; Wang, K; Campion, R P; Gallagher, B L; Foxon, C T; Hilton, K P; Masterton, A; Wallis, D; Balmer, R S; Uren, M J; Martin, T; Brown, P D

2006-01-01

The limits of applicability of the nanoscale spatial resolution analysis techniques of EFTEM, CBED and dark field imaging as applied to ohmic contacts to AlGaN/GaN and Mn distribution within Ga 1-x Mn x As epilayers are considered. EFTEM can be limited by acquisition times necessitating the post processing of images to compensate for sample drift. Complementary technique of assessment are required to address problems of peak overlaps in energy loss spectra or signal to noise problems for low elemental concentrations. The use of 002 dark field imaging to appraise Ga 1-x Mn x As epilayers is demonstrated

Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

Science.gov (United States)

Wu, Bin

Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

Experimental studies on the photoemission of gallium arsenide crystals

International Nuclear Information System (INIS)

Westermann, M.

2003-04-01

In this thesis the study influence of residual gases on the lifetime, the temperature dependence of the quantum yield, and the influence of activation with potassium on both effects for GaAs-photocathodes is described. (HSI)

Electrodeposition of epitaxial CdSe on (111) gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Cachet, H.; Cortes, R.; Froment, M. [Universite Pierre et Marie Curie, Paris (France). Phys. des Liquides et Electrochimie; Etcheberry, A. [Institut Lavoisier (IREM) UMR CNRS C0173, Universite de Versailles- St Quentin en Yvelynes, 45 Avenue des Etats Unis, 78035, Versailles (France)

2000-02-21

Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (orig.)

TEM EDS analysis of epitaxially-grown self-assembled indium islands

Directory of Open Access Journals (Sweden)

Jasmine Sears

2017-05-01

Full Text Available Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM Energy Dispersive Spectroscopy (EDS. Several sizes of islands are examined, with larger islands exhibiting high (>94% average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters.

Neutron activation determination of phosphorus and sulfur in semiconductor materials by 32P-isotope

International Nuclear Information System (INIS)

Nikolaev, A.V.; Gol'dshtejn, M.M.; Gil'bert, Eh.N.; Verevkin, G.V.; Yudelevich, I.G.

1977-01-01

A neutron-activation method has been developed for determining phosphorus and sulphur in germanium, gallium, gallium arsenide, and silicon structures using 32 P isotope. The dioctyl-sulphoxide (DOSO) extraction of phosphoric molybdenum acid (PMA) has been used to separate 32 P in a radiochemically pure form. Correction factors have been calculated due to the 2nd order interference on 30 Si nuclei in determining phosphorus in silicon for various irradiation times and at various cadmium proportions

Effect of antimony substitution in iron pnictide compounds

OpenAIRE

Schmidt, D.; Braun, H. F.

2015-01-01

In the present study we have examined the effect of negative chemical pressure in iron pnictides. We have synthesized substitution series replacing arsenic by antimony in a number of 1111- and 122-iron arsenides and present their crystallographic and physical properties. The SDW transition temperature in LaFeAs$_{\\mathrm{1-x}}$Sb$_{\\mathrm{x}}$O decreases with increasing antimony content, while the superconducting transition temperature in LaFeAs$_{\\mathrm{1-x}}$Sb$_{\\mathrm{x}}$O$_{\\mathrm{0...

Manhattan Project Technical Series The Chemistry of Uranium (I) Chapters 1-10

International Nuclear Information System (INIS)

Rabinowitch, E. I.; Katz, J. J.

1946-01-01

This constitutes Chapters 1 through 10. inclusive, of The Survey Volume on Uranium Chemistry prepared for the Manhattan Project Technical Series. Chapters are titled: Nuclear Properties of Uranium; Properties of the Uranium Atom; Uranium in Nature; Extraction of Uranium from Ores and Preparation of Uranium Metal; Physical Properties of Uranium Metal; Chemical Properties of Uranium Metal; Intermetallic Compounds and Alloy systems of Uranium; the Uranium-Hydrogen System; Uranium Borides, Carbides, and Silicides; Uranium Nitrides, Phosphides, Arsenides, and Antimonides.

Low Level (Sub Threshold), Large Spot Laser Irradiations of the Foveas of Macaca Mulatta.

Science.gov (United States)

1981-11-01

spherules. In a portion of the block containing the macula a degenerating patch is seen, displaying considerable edema, with pyknotic and missing nuclei...6 Peripheral areas 11 Macula 11 Eye # 3 M31 2KD 15 (enucleated 7 days after focal irradiation jby gallium arsenide laser). Control areas 15 Neodymium...laser irradiations peripheral areas 23 Macula 28 TABLE OF CONTENTS continued Page Eye # 5 M443 2JD Patched Eye 32 Most areas 32 area nasal to optic disc

Effect of ion-beam gettering on the GaAs transistor structure parameters under neutron irradiation

International Nuclear Information System (INIS)

Obolenskij, S.V.; Skupov, V.D.

2000-01-01

It is established that the neutron irradiation negative effect on the parameters of the field transistors with the Schottky shut-off on the basis of the epitaxial gallium arsenide is essentially reduced when the argon ions are preliminary implanted into structure on the substrate side. The above effect is explained through remotely controlled gettering by ion irradiation of admixtures and defects in the transistor active areas related with origination of deep levels under the neutron fluence [ru

Experimental study on the production of high density electron bunches from a GaAs photocathode

International Nuclear Information System (INIS)

Calabrese, R.; Masoli, F.; Gong, J.M.; Guidi, V.; Tecchio, L.

1991-01-01

In order to obtain a high charge, low emittance electron source, useful for FEL electron injector and for e + e - collider experiments, we performed a test experiment on a gallium arsenide photocathode, activated by negative electron affinity technique and illuminated with a 10 ns long laser pulse of 532 nm wavelength. We measured a maximum charge delivered, at relatively low potentials, of about 18 nC/bunch. The mean lifetime is greater than 60 h. (orig.)

Situation and perspectives of the development of investigation on photovoltage conversion of solar energy in Kazakhstan

International Nuclear Information System (INIS)

Mansurov, Z.A.; Taurbaev, T.I.; Mikhailov, L.V.; Bychkov, S.G.

1997-01-01

The article presents the talk on the research and development on photovoltaic conversion of solar energy in Kazakhstan given at the International Workshop on applied solar energy held in Tashkent(Uzbekistan) in June 1997. It is shown that the use of solar energy devices in particular on the basis of photovoltaic cells has the economical advantage in Kazakhstan arid lands. The description of some photovoltaic cells on the basis of aluminium and gallium arsenide is presented. (A.A.D.)

Temperature and concentration quenching of Tb{sup 3+} emissions in Y{sub 4}Al{sub 2}O{sub 9} crystals

Energy Technology Data Exchange (ETDEWEB)

Boruc, Z., E-mail: z.boruc@stud.elka.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw (Poland); Fetlinski, B.; Kaczkan, M. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw (Poland); Turczynski, S.; Pawlak, D. [Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw (Poland); Malinowski, M. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw (Poland)

2012-08-15

Highlights: Black-Right-Pointing-Pointer Spectroscopic properties of Tb{sup 3+}:Y{sub 4}Al{sub 2}O{sub 9} crystals are studied. Black-Right-Pointing-Pointer Concentration and temperature dependencies of fluorescence are investigated. Black-Right-Pointing-Pointer The cross-relaxation transfer rates are experimentally determined. Black-Right-Pointing-Pointer Strong influence of cross relaxation process on {sup 5}D{sub 3} emission quenching is observed. Black-Right-Pointing-Pointer Decays are modelled using Inokuti-Hirayama approach. - Abstract: Spectroscopic properties of trivalent terbium (Tb{sup 3+}) activated Y{sub 4}Al{sub 2}O{sub 9} (abbreviated YAM) crystals were studied. Concentration and temperature dependent emission spectra and fluorescence dynamics profiles have been investigated in YAM:Tb{sup 3+} in order to understand better processes responsible for quenching of the terbium {sup 5}D{sub 3} and {sup 5}D{sub 4} emissions. Decays were modelled using Inokuti-Hirayama approach to obtain information on the energy transfer mechanism. The cross-relaxation transfer rates were experimentally determined as a function of temperature and Tb{sup 3+} concentration. The investigation revealed strong influence of cross-relaxation process on {sup 5}D{sub 3} emission quenching. The two different processes responsible for the increase of fluorescence quenching with growing temperature were observed, both related to thermal activation energy. For temperatures above 700 K, the temperature dependence of the emission intensity ratio ({sup 5}D{sub 3}/{sup 5}D{sub 4}) becomes linear and the decay times are rapidly decreasing monotonously with increasing temperature, what is confirming the potential of Y{sub 4}Al{sub 2}O{sub 9}:Tb{sup 3+} material in high temperature luminescence thermometry.

Rare (Earth Elements [score

Directory of Open Access Journals (Sweden)

Camilo Méndez

2014-12-01

Full Text Available Rare (Earth Elements is a cycle of works for solo piano. The cycle was inspired by James Dillon’s Book of Elements (Vol. I-V. The complete cycle will consist of 14 pieces; one for each selected rare (earth element. The chosen elements are Neodymium, Erbium, Tellurium, Hafnium, Tantalum, Technetium, Indium, Dysprosium, Lanthanium, Cerium, Europium, Terbium, Yttrium and Darmstadtium. These elements were selected due to their special atomic properties that in many cases make them extremely valuable for the development of new technologies, and also because of their scarcity. To date, only 4 works have been completed Yttrium, Technetium, Indium and Tellurium.

Observation of soft phonon mode in TbFe3(BO3)4 by inelastic neutron scattering

Science.gov (United States)

Pavlovskiy, M. S.; Shaykhutdinov, K. A.; Wu, L. S.; Ehlers, G.; Temerov, V. L.; Gudim, I. A.; Shinkorenko, A. S.; Podlesnyak, A.

2018-02-01

The phonon dispersion in terbium iron borate TbFe3(BO3)4 has been measured by inelastic neutron scattering in a temperature range 180

Induced assembly and photoluminescence of lanthanum (Tb, Eu, Dy) complexes/ZnO/polyethylene glycol hybrid phosphors

Energy Technology Data Exchange (ETDEWEB)

Yan Bing [Department of Chemistry, Tongji University, Siping Road 1239, Shanghai 200092 (China)]. E-mail: byan@tongji.edu.cn; Chen Xi [Department of Chemistry, Tongji University, Siping Road 1239, Shanghai 200092 (China); Wu Jianhua [Department of Chemistry, Tongji University, Siping Road 1239, Shanghai 200092 (China)

2007-08-31

Some novel kinds of hybrid phosphors were assembled with lanthanum (Tb, Eu, Dy) complexes (with four kinds of terbium complexes is 2,4-dihydroxybenzonic acid (DHBA), 1,10-phenanthroline (phen), acetylacetone (AA) and nicotinic acid (Nic), respectively) doped ZnO/PEG particles by co-precipitation approach derived from Zn(CH{sub 3}COO){sub 2} (Zn(AC){sub 2}), NaOH, PEG as precursors at room temperature. The characteristic luminescence spectra for f-f transitions of Tb{sup 3+}, Eu{sup 3+}, Dy{sup 3+} were observed. It is worthy to point out that ZnO is the excellent host for lanthanum ions by the assembly of PEG matrices.

Synthesis and characterization of multifunctional silica core-shell nanocomposites with magnetic and fluorescent functionalities

International Nuclear Information System (INIS)

Ma Zhiya; Dosev, Dosi; Nichkova, Mikaela; Dumas, Randy K.; Gee, Shirley J.; Hammock, Bruce D.; Liu Kai; Kennedy, Ian M.

2009-01-01

Multifunctional core-shell nanocomposites with a magnetic core and a silica shell doped with lanthanide chelate have been prepared by a simple method. First, citric acid-modified magnetite nanoparticles were synthesized by a chemical coprecipitation method. Then the magnetite nanoparticles were coated with silica shells doped with terbium (Tb 3+ ) complex by a modified Stoeber method based on hydrolyzing and condensation of tetraethyl orthosilicate (TEOS) and a silane precursor. These multifunctional nanocomposites are potentially useful in a variety of biological areas such as bio-imaging, bio-labeling and bioassays because they can be simultaneously manipulated with an external magnetic field and exhibit unique phosphorescence properties.

Alaska's rare earth deposits and resource potential

Science.gov (United States)

Barker, James C.; Van Gosen, Bradley S.

2012-01-01

Alaska’s known mineral endowment includes some of the largest and highest grade deposits of various metals, including gold, copper and zinc. Recently, Alaska has also been active in the worldwide search for sources of rare earth elements (REE) to replace exports now being limitedby China. Driven by limited supply of the rare earths, combined with their increasing use in new ‘green’ energy, lighting, transportation, and many other technological applications, the rare earth metals neodymium, europium and, in particular, the heavy rare earth elements terbium, dysprosium and yttrium are forecast to soon be in critical short supply (U.S. Department of Energy, 2010).

Reversed-phase thin-layer chromatography of the rare earth elements

International Nuclear Information System (INIS)

Kuroda, R.; Adachi, M.; Oguma, K.

1988-01-01

Partition chromatographic behaviour of the rare earth elements on C 18 bonded silica reversed-phase material has been investigated by thin-layer chromatography in methanol - lactate media. The rare earth lactato complexes are distributed and fractionated on bonded silica layers without ion-interaction reagents. The concentration and pH of lactate solution, methanol concentration and temperature have effects on the migration and resolution of the rare earth elements. The partition system is particularly suited to separate adjacent rare earths of middle atomic weight groups, allowing the separation of gadolinium, terbium, dysprosium, holmium, erbium and thulium to be achieved by development to 18 cm distance. (orig.)

Effect of metal ions on the formation and properties of monolayers and nanosized Langmuir-Blodgett films based on diphilic aminomethylated calix[4]resorcinarenes

International Nuclear Information System (INIS)

Neveshkin, A.A.; Rusanova, T.Yu.; Rumyantseva, S.S.; Serdobintsev, A.A.; Podkosov, K.V.; Shtykov, S.N.; Klimov, B.N.; Gorin, D.A.; Ryzhkina, I.S.

2008-01-01

The behavior of the monolayers of three diphilic aminomethylated calix[4]resorcinarene (CRA) derivatives on the surface of a pure aqueous subphase and subphase containing copper(II), nickel(II), europium(III), terbium(III), and lanthanum(III) ions was investigated. The monolayer transfer to the quartz and single-crystal silicon substrates was accomplished by the Langmuir-Blodgett (LB) technique. The films were studied by ellipsometry and mass-spectrometry. Metal ions were found to exert effect on the limit area per one CRA molecule in the monolayer, on the surface collapse pressure and transfer coefficient of monolayer, and on the thickness and refractive index of the CRA-based LB films [ru

LLE Review 120 (July-September 2009)

Energy Technology Data Exchange (ETDEWEB)

Edgell, D.H., editor

2001-02-19

This issue has the following articles: (1) The Omega Laser Facility Users Group Workshop; (2) The Effect of Condensates and Inner Coatings on the Performance of Vacuum Hohlraum Targets; (3) Zirconia-Coated-Carbonyl-Iron-Particle-Based Magnetorheological Fluid for Polishing Optical Glasses and Ceramics; (4) All-Fiber Optical Magnetic Field Sensor Based on Faraday Rotation in Highly Terbium Doped Fiber; (5) Femtosecond Optical Pump-Probe Characterization of High-Pressure-Grown Al{sub 0.86}Ga{sub 0.14}N Single Crystals; (6) LLE's Summer High School Research Program; (7) Laser Facility Report; and (8) National Laser Users Facility and External Users Programs.

Luminescence properties of terbium-doped Li 3 PO 4 phosphor for ...

Indian Academy of Sciences (India)

A polycrystalline sample of Li 3 PO 4 :Tb 3 + phosphor was successfully synthesized using solid-state diffusion method. This synthesis method is of low cost, low temperature and does not require any other atmospheres for the synthesis. The powder X-ray diffraction (PXRD), photoluminescence (PL) emission and excitation ...

Spin waves in terbium. III. Magnetic anisotropy at zero wave vector

DEFF Research Database (Denmark)

Houmann, Jens Christian Gylden; Jensen, J.; Touborg, P.

1975-01-01

The energy gap at zero wave vector in the spin-wave dispersion relation of ferromagnetic. Tb has been studied by inelastic neutron scattering. The energy was measured as a function of temperature and applied magnetic field, and the dynamic anisotropy parameters were deduced from the results...... the effects of zero-point deviations from the fully aligned ground state, and we tentatively propose polarization-dependent two-ion couplings as their origin........ The axial anisotropy is found to depend sensitively on the orientation of the magnetic moments in the basal plane. This behavior is shown to be a convincing indication of considerable two-ion contributions to the magnetic anisotropy at zero wave vector. With the exception of the sixfold basal...

Selective Sensing of Tyrosine Phosphorylation in Peptides Using Terbium(III Complexes

Directory of Open Access Journals (Sweden)

Jun Sumaoka

2016-01-01

Full Text Available Phosphorylation of tyrosine residues in proteins, as well as their dephosphorylation, is closely related to various diseases. However, this phosphorylation is usually accompanied by more abundant phosphorylation of serine and threonine residues in the proteins and covers only 0.05% of the total phosphorylation. Accordingly, highly selective detection of phosphorylated tyrosine in proteins is an urgent subject. In this review, recent developments in this field are described. Monomeric and binuclear TbIII complexes, which emit notable luminescence only in the presence of phosphotyrosine (pTyr, have been developed. There, the benzene ring of pTyr functions as an antenna and transfers its photoexcitation energy to the TbIII ion as the emission center. Even in the coexistence of phosphoserine (pSer and phosphothreonine (pThr, pTyr can be efficintly detected with high selectivity. Simply by adding these TbIII complexes to the solutions, phosphorylation of tyrosine in peptides by protein tyrosine kinases and dephosphorylation by protein tyrosine phosphatases can be successfully visualized in a real-time fashion. Furthermore, the activities of various inhibitors on these enzymes are quantitatively evaluated, indicating a strong potential of the method for efficient screening of eminent inhibitors from a number of candidates.

Luminescence properties of terbium-doped Li3PO4 phosphor for ...

Indian Academy of Sciences (India)

... of faster and multiple readout, very high sensitivity, absence of thermal quenching and possible use of phosphor in plastic binders [3–15]. ... synthesis technique was developed to reduce the time required for the synthesis, which was about.

Influence of dysprosium and terbium additions on aluminium structure and properties

International Nuclear Information System (INIS)

Fridlyander, I.N.; Sokolovskaya, E.M.; Zimina, E.N.; Tkachenko, E.A.; Artemova, M.S.

1992-01-01

The influence of 0.3%Dy and 0.3%Tb additions were investigated on grain size in aluminium ingots and on recrystallization and mechanical properties in 1.5 mm thick sheets. Grain refinement in ingots was revealed along with an increase of sheet recrystallization temperature and grain growth retardation in the process of secondary recrystallization. Ultimate strength was found to rise at some decrease of specific elongation

Magneto-optical studies of valence instability in europium and terbium phosphors

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Lucas C.V. [Department of Chemistry, University of Turku, FI-20014 Turku (Finland); Instituto de Química, Universidade de São Paulo, São Paulo, -SP (Brazil); Hölsä, Jorma [Department of Chemistry, University of Turku, FI-20014 Turku (Finland); Instituto de Química, Universidade de São Paulo, São Paulo, -SP (Brazil); Turku University Centre for Materials and Surfaces (MatSurf) (Finland); University of the Free State, Department of Physics, Bloemfontein (South Africa); Brito, Hermi F. [Instituto de Química, Universidade de São Paulo, São Paulo, -SP (Brazil); Maryško, Miroslav [Institute of Physics, The Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Matos, Jivaldo R. [Instituto de Química, Universidade de São Paulo, São Paulo, -SP (Brazil); Paturi, Petriina [Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Rodrigues, Rodrigo V. [Instituto de Química, Universidade de São Paulo, São Paulo, -SP (Brazil); Lastusaari, Mika, E-mail: miklas@utu.fi [Department of Chemistry, University of Turku, FI-20014 Turku (Finland); Turku University Centre for Materials and Surfaces (MatSurf) (Finland)

2016-02-15

The impurities and dopants' inappropriate valences may deteriorate the performance of luminescent materials, cause waste of the precious rare earth (R) material and thus incur financial losses. The usual methods to detect the valence of rare earths; XPS, Mössbauer and XANES spectroscopies, are not sensitive enough for low concentrations and the EPR methods are not very suitable for powders. In this work, the comparison between the theoretical and experimental temperature-dependent paramagnetic susceptibilities was used to obtain quantitatively the concentrations of the impurity valence in Eu{sub 2}O{sub 2}S and Tb{sub 2}O{sub 2}SO{sub 4}, both containing nominally only R{sup 3+}. Minute (ppm level) Eu{sup 2+} impurities could be analyzed because of the huge difference in the paramagnetic susceptibility between Eu{sup 2+} and Eu{sup 3+} at low temperatures. However, temperatures below 50 K are then needed whilst the Tb{sup IV} impurity in a Tb{sup 3+} matrix can be observed already at higher temperatures. The latter method based on comparing the slopes of the Tb{sup 3+}/Tb{sup IV} paramagnetic susceptibility vs temperature curves for the Tb{sup 3+}/Tb{sup IV} couple is less sensitive than for the Eu{sup 2+}/Eu{sup 3+} one. Finally, the host independent temperature evolution of the paramagnetic susceptibility was calculated for Gd{sup 3+} (or Eu{sup 2+} or Tb{sup IV}) to yield a simple analytical expression to be used universally. - Highlights: • Wave functions for Eu{sup 3+}/Tb{sup 3+} with crystal field effect calculated for oxysulfide/sulfate. • Paramagnetic susceptibility between 4 and 300 K simulated for 4f{sup 6/7/8} configurations. • Amount of valence impurities (Eu{sup 2+} and Tb{sup IV}) evaluated from susceptibility data. • Waste of raw materials and loss of luminescence intensity of phosphors can be avoided.

Joint Services Electronics Program: Basic Research in Electronics (JSEP) at the University of Texas at Austin. Appendix.

Science.gov (United States)

1986-12-31

applications in tration on the temperature response, an effect also found the processing of Si and III-V compound semiconductors in silicon by Seidel et al. (5...Dannefaer, B. Hogg, and D. Kerr, "Defect Characterization in V. Ckil mo and Cofmment Gallium Arsenide By Positron Annihilation ," in Thirteenth We...unnecessary In "A ’I.I %’ S. 4 Brower et l. A schematic of the experimental arrangement emplSyed for application of the homodyne spectroscopy technique to

Using of solar energy in Republic of Georgia

International Nuclear Information System (INIS)

Meladze, N.

1997-01-01

The article presents the talk on the use of solar energy in Georgia given at the International Workshop on applied solar energy held in Tashkent(Uzbekistan) in June 1997. The main use of solar energy in the Republic is in solar heating systems developed and produced in Georgia. Presently 12 projects are in progress for effective use of renewable energy sources. Among them the research and development on photovoltaic cells on the basis of silicon and gallium arsenide solar cells. (A.A.D.)

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

Science.gov (United States)

Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

1984-01-01

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

Science.gov (United States)

Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

Infrared and millimeter waves v.14 millimeter components and techniques, pt.V

CERN Document Server

Button, Kenneth J

1985-01-01

Infrared and Millimeter Waves, Volume 14: Millimeter Components and Techniques, Part V is concerned with millimeter-wave guided propagation and integrated circuits. In addition to millimeter-wave planar integrated circuits and subsystems, this book covers transducer configurations and integrated-circuit techniques, antenna arrays, optoelectronic devices, and tunable gyrotrons. Millimeter-wave gallium arsenide (GaAs) IMPATT diodes are also discussed. This monograph is comprised of six chapters and begins with a description of millimeter-wave integrated-circuit transducers, focusing on vario

Detection of protease activity by fluorescent protein FRET sensors: from computer simulation to live cells

Science.gov (United States)

Goryashchenko, Alexander S.; Khrenova, Maria G.; Savitsky, Alexander P.

2018-04-01

Förster resonance energy transfer (FRET) sensors are widely used for the detection of protease activity in vitro and in vivo. Usually they consist of a FRET pair connected with a polypeptide linker containing a specific cleavage site for the relevant protease. Use of the fluorescent proteins as components of the FRET pair allows genetic encoding of such sensors and solves the problem of their delivery into live cells and animals. There are several ways to improve the properties of such sensors, mainly to increase FRET efficiency and therefore the dynamic range. One of the ways to achieve this is to use a non-fluorescent chromoprotein as an acceptor. Molecular dynamic simulations may assist in the construction of linker structures connecting donor and acceptor molecules. Estimation of the orientation factor κ 2 can be obtained by methods based on quantum theory and combined quantum mechanics/molecular mechanics approaches. The linker can be structured by hydrophobic interactions, bringing it into a closed conformation that shortens the distance between donor and acceptor and, consequently, increases FRET efficiency. We analyzed the effects of different linker structures on the detection of caspase-3 activity using a non-fluorescent acceptor. Also we have constructed the Tb3+- TagRFP sensor in which a complex of the terbium ion and terbium-binding peptide is used as a donor. This allowed us to use the unique property of lanthanide ions—fluorescence lifetime up to milliseconds—to perform measurements with time delay and exclude the nanosecond-order fluorescence. Using our systems as a starting point, by changing the recognition site in the linker it is possible to perform imaging of different protease activity in vitro or in vivo.

China's rare-earth industry

Science.gov (United States)

Tse, Pui-Kwan

2011-01-01

Introduction China's dominant position as the producer of over 95 percent of the world output of rare-earth minerals and rapid increases in the consumption of rare earths owing to the emergence of new clean-energy and defense-related technologies, combined with China's decisions to restrict exports of rare earths, have resulted in heightened concerns about the future availability of rare earths. As a result, industrial countries such as Japan, the United States, and countries of the European Union face tighter supplies and higher prices for rare earths. This paper briefly reviews China's rare-earth production, consumption, and reserves and the important policies and regulations regarding the production and trade of rare earths, including recently announced export quotas. The 15 lanthanide elements-lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium (atomic numbers 57-71)-were originally known as the rare earths from their occurrence in oxides mixtures. Recently, some researchers have included two other elements-scandium and yttrium-in their discussion of rare earths. Yttrium (atomic number 39), which lies above lanthanum in transition group III of the periodic table and has a similar 3+ ion with a noble gas core, has both atomic and ionic radii similar in size to those of terbium and dysprosium and is generally found in nature with lanthanides. Scandium (atomic number 21) has a smaller ionic radius than yttrium and the lanthanides, and its chemical behavior is intermediate between that of aluminum and the lanthanides. It is found in nature with the lanthanides and yttrium. Rare earths are used widely in high-technology and clean-energy products because they impart special properties of magnetism, luminescence, and strength. Rare earths are also used in weapon systems to obtain the same properties.

Synthesis and fabrication of Y{sub 2}O{sub 3}:Tb{sup 3+} and Y{sub 2}O{sub 3}:Eu{sup 3+} thin films for electroluminescent applications: Optical and structural characteristics

Energy Technology Data Exchange (ETDEWEB)

Alarcón-Flores, G., E-mail: alar_fbeto@yahoo.com [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, IPN, Legaría 694, Irrigación, C.P. 11500, México D.F. (Mexico); García-Hipólito, M. [Instituto de Investigaciones en Materiales, UNAM, Apdo. Postal 70-360, Delegación Coyoacán, C.P. 04150, México D.F. (Mexico); Aguilar-Frutis, M. [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, IPN, Legaría 694, Irrigación, C.P. 11500, México D.F. (Mexico); Carmona-Téllez, S. [Instituto de Física, UNAM, Coyoacán, C.P. 04150, México D.F. (Mexico); Martinez-Martinez, R. [Universidad Tecnológica de la Mixteca, Carretera Acatlima Km 2.5, Huajuapan de León Oaxaca, C.P. 69000, México (Mexico); Campos-Arias, M.P. [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, IPN, Legaría 694, Irrigación, C.P. 11500, México D.F. (Mexico); Zaleta-Alejandre, E. [Universidad Autónoma del Estado de Hidalgo-Escuela Superior de Apan, Carretera Apan-Calpulalpan Km. 8, C.P. 43920, Apan, Hidalgo (Mexico); and others

2015-01-15

Terbium, europium and yttrium β diketonates have been synthesized from acetylacetone and inorganic metal salts and used as precursors for the deposition of Tb{sup 3+} or Eu{sup 3+} doped Y{sub 2}O{sub 3} polycrystalline films by the ultrasonic spray pyrolysis technique. The films were deposited on c-Si substrates at temperatures in the 400–550 °C range. The optical and structural characterization of these films as a function of substrate temperature and Tb{sup 3+} and Eu{sup 3+} concentration was carried out by means of photoluminescence (PL), cathodoluminescence (CL), infrared (IR), ellipsometry, and UV–visible spectroscopy and atomic force microscopy (AFM), energy dispersive spectroscopy (EDS) and X ray diffraction (XRD) measurements respectively. The PL intensity from these films was found to depend on deposition temperature. Films deposited above 450 °C exhibited the characteristic PL peaks associated with either Tb{sup 3+} or Eu{sup 3+} intra electronic energy levels transitions. The most intense PL emission was found for dopant concentration of 10 at% for Tb{sup 3+} and at 8 at% for Eu{sup 3+} ions into precursor solution. In both cases concentration quenching of the PL emission was observed for concentrations above these values. The films had a refractive index (1.81), low average surface roughness (∼62 Å) and a UV–Vis. transmission of the order of 90 %T. - Highlights: • Terbium, europium and yttrium β diketonates have been synthesized. • Luminescent thin films of Y{sub 2}O{sub 3}:Tb{sup 3+} and Y{sub 2}O{sub 3}:Eu{sup 3+} were obtained. • Optical and structural characteristics of these thin films are presented. • The films had a refractive index (1.81) and low average surface roughness (∼62 Å)

Radical-lanthanide ferromagnetic interaction in a T bIII bis-phthalocyaninato complex

Science.gov (United States)

Komijani, Dorsa; Ghirri, Alberto; Bonizzoni, Claudio; Klyatskaya, Svetlana; Moreno-Pineda, Eufemio; Ruben, Mario; Soncini, Alessandro; Affronte, Marco; Hill, Stephen

2018-02-01

Recent studies have highlighted the importance of organic ligands in the field of molecular spintronics, via which delocalized electron-spin density can mediate magnetic coupling to otherwise localized 4 f moments of lanthanide ions, which show tremendous potential for single-molecule device applications. To this end, high-field/high-frequency electron paramagnetic resonance (EPR) spectroscopy is employed to study a neutral terbium bis-phthalocyaninato metalorganic complex, [TbPc2 ] 0, with the aim of understanding the magnetic interaction between the Ising-like moment of the lanthanide ion and the unpaired spin density on the coordinating organic radical ligand. The measurements were performed on a previously unknown [TbPc2 ] 0 structural phase crystallizing in the Pnma space group. EPR measurements on powder samples of [TbPc2 ] 0 reveal an anisotropic spectrum, which is attributed to the spin-1/2 radical coupled weakly to the EPR-silent T bIII ion. Extensive double-axis rotation studies on a single crystal reveal two independent spin-1/2 signals with differently oriented (albeit identical) uniaxial g -tensors, in complete agreement with x-ray structural studies that indicate two molecular orientations within the unit cell. The easy-axis nature of the radical EPR spectra thus reflects the coupling to the Ising-like T bIII moment. This is corroborated by studies of the isostructural [YPc2 ] 0 analog (where Y is nonmagnetic yttrium), which gives a completely isotropic radical EPR signal. The experimental results for the terbium complex are well explained on the basis of an effective model that introduces a weak ferromagnetic Heisenberg coupling between an isotropic spin-1/2 and an anisotropic spin-orbital moment, J =6 , that mimics the known, strong easy-axis Tb ⋯P c2 crystal-field interaction.

Lasers Induced Damage in Optical Materials: 1985. Proceedings of the Symposium on Optical Materials for High-Power Lasers (17th) Held in Boulder, Colorado on October 28-30, 1985

Science.gov (United States)

1988-07-01

1985, pp. 1626-1633. [2] S. Dannefaer, B. Hogg, and D. Kerr, "Defect Characterization in Gallium Arsenide by Positron Annihilation ," Thirteenth...23, No. 4, 5, . " J. J.R. ;-!cteil, G.A. Al-Jumaily, K.C. Jungling, and A.C. Barron, "Properties of TiO2 , aridSiO 2 Thin Films Deposited Using ion...Sputter Deposited SiO 2 / TiO2 Coatings J. R. Sites and H. Demiryont Physics Department, Colorado State University Fort Collins, CO 80523 A-ray

Radiation performance of AlGaAs concentrator cells and expected performance of cascade structures

International Nuclear Information System (INIS)

Curtis, H.B.; Swartz, C.K.; Hart, R.E. Jr.

1987-01-01

Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1 MeV electrons and 37 MeV protons. These cells are candidates for individual cells in a cascade structure. Data is presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AMO. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series connected and separately connected structures are investigated

Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing

International Nuclear Information System (INIS)

Bublik, V.T.; Shcherbachev, K.D.; Komarnitskaya, E.A.; Parkhomenko, Yu.N.; Vygovskaya, E.A.; Evgen'ev, S.B.

1999-01-01

The formation and relaxation processes for radiation-induced defects in the implantation of 50 keV Si + ions into gallium arsenide and subsequent 10-min annealing in arsine at 850 deg. C have been studied by the triple-crystal X-ray diffractometry and secondary-ion mass spectroscopy techniques. It is shown that the existence of the vacancy-enriched layer stimulating diffusion of introduced dopants into the substrate surface can significantly affect the distribution profile of the dopant in the course of preparation of thin implanted layers

The effect of laser radiation on eyesight and determination of safety distance when using laser simulators

International Nuclear Information System (INIS)

Rakochevicj, S.; Dugandzhija, S.

1989-01-01

The influence of laser emission from the GaAs laser in a spectrum close infrared range on human eye and skin has been discussed. The application of gallium arsenide laser injections includes laser simulators. Analytic expression is defined. It is used to calculate the safety distance for the given parameters. There is a diagram of the programme procedure for calculation and graphical analysis of safety distance. Typical dependences of safety distance on the energy and divergency of laser radiation are discussed. (author). 5 refs.; 14 figs

Magnetic properties changes of MnAs thin films irradiated with highly charged ions

OpenAIRE

Trassinelli , Martino; Gafton , V.; Eddrief , Mahmoud; Etgens , Victor H.; Hidki , S.; Lacaze , Emmanuelle; Lamour , Emily; Luo , X.; Marangolo , Massimiliano; Merot , Jacques; Prigent , Christophe; Reuschl , Regina; Rozet , Jean-Pierre; Steydli , S.; Vernhet , Dominique

2013-01-01

International audience; We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150~nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\\times10^{12}$ to $1.6\\times10^{15}$~ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Prelim...

Design and Development of a Magneto-Optic Sensor for Magnetic Field Measurements

Directory of Open Access Journals (Sweden)

Sarbani CHAKRABORTY

2015-01-01

Full Text Available A magneto-optic sensor is developed using a Terbium Doped Glass (TDG element as a Faraday rotation sensor and optical fiber as light transmitting and receiving medium. Online LabView based application software is developed to process the sensor output. The system is used to sense the magnetic field of a DC motor field winding in industrial environment. The sensor output is compared with the magnetic flux density variation obtained with a calibrated Hall Magnetic sensor (Gauss Meter. A linear variation of sensor output over wide range of current passing through the field winding is obtained. Further the results show an improved sensitivity of magneto-optic sensor over the Hall sensor.

Measurement of 160Tb and 161Tb in nuclear forensics samples

International Nuclear Information System (INIS)

Jiang, J.; Davies, A.V.; Britton, R.E.

2017-01-01

160 Tb and 161 Tb are important radionuclides to measure when analysing a Nuclear Forensics sample. An analytical method for the measurement of both 160 Tb and 161 Tb was developed in this study. Terbium was separated and purified using exchange resin and TrisKem LN Resin. The purified fraction containing 160 Tb and 161 Tb was measured by gamma spectrometry and liquid scintillation counting. The counting efficiencies of 160 Tb and 161 Tb were determined using the CIEMAT/NIST efficiency tracing method. The LSC count rate ratio, R160 Tb /R161 Tb , on the reference date was determined by sequential counting and calculated using a custom script based on their half-lives. (author)

Solvent extraction of rare earth nitrates by Versatic Acid 911

Energy Technology Data Exchange (ETDEWEB)

Kazuoka, K; Tanabe, T; Kondo, Y [Kyoto Univ. (Japan)

1975-07-01

The extraction equilibria of cerous, terbium and yttrium nitrates into Versatic Acid 911 were studied. The organic phase was diluted with benzene, and the ionic strength of the aqueous solutions was maintained at unity by adding NaNO/sub 3/. Radioactive isotopes of these elements were used as the tracer. The compositions of the extracted species were CeR/sub 3/.4RH.H/sub 2/O, TbR/sub 3/.4RH.H/sub 2/O and YR/sub 3/.4RH.H/sub 2/o, and the apparent equilibrium constants of extraction were 9.14x10/sup -15/, 3.90x10/sup -14/ and 1.70x10/sup -14/, respectively.

Complex logic functions implemented with quantum dot bionanophotonic circuits.

Science.gov (United States)

Claussen, Jonathan C; Hildebrandt, Niko; Susumu, Kimihiro; Ancona, Mario G; Medintz, Igor L

2014-03-26

We combine quantum dots (QDs) with long-lifetime terbium complexes (Tb), a near-IR Alexa Fluor dye (A647), and self-assembling peptides to demonstrate combinatorial and sequential bionanophotonic logic devices that function by time-gated Förster resonance energy transfer (FRET). Upon excitation, the Tb-QD-A647 FRET-complex produces time-dependent photoluminescent signatures from multi-FRET pathways enabled by the capacitor-like behavior of the Tb. The unique photoluminescent signatures are manipulated by ratiometrically varying dye/Tb inputs and collection time. Fluorescent output is converted into Boolean logic states to create complex arithmetic circuits including the half-adder/half-subtractor, 2:1 multiplexer/1:2 demultiplexer, and a 3-digit, 16-combination keypad lock.

Optical and EPR spectra of γ-irradiated glasses of the Ba(PO3)2-LiF system

International Nuclear Information System (INIS)

Bocharova, T.V.; Karapetyan, G.O.; Khalilev, V.D.; Yashchurzhinskaya, O.A.

1985-01-01

EPR and optical absorption spectra of the Be(PO 3 ) 2 -LiF system glasses are obtained. Introduction of LiF up to 60 mol. % doesn't lead to occurrence of an additional absorption band (AAB) and EPR signals connected with F-centers formed under γ-irradiation in the LiF monocrystal. As a result of γ-irradiation of glasses activated by terbium, radiation color centers (RCC) are formed, which are, probably, the centers of electron capture and possess no unambiguous correlation with the known paramagnetic centers (PMC). Parallel investigation into the thermal decolouration kinetics by the EPR and optical spectroscopy method is reliable for establishing correlation between AAB and PMC signals in EPR spectra

Solid state chemistry of rare earth oxides. Final report, September 1, 1950--July 31, 1977

International Nuclear Information System (INIS)

Eyring, L.

1977-07-01

Work under Contract E(11-1)-1109 and its antecedents has been primarily for the purpose of obtaining detailed thermodynamic, kinetic and structural information on the complex rare earth oxides of praseodymium and terbium. These systems exhibit homologous series of ordered phases, order-disorder transformations, wide-range nonstoichiometric phases, chemical hysteresis in two-phase regions and many other solid state reaction phenomena. Fluorite-related materials of importance to ERDA occur as nuclear fuels, radiation power sources, insulators and solid electrolytes. The rare earth oxides serve directly as model systems for such similar materials and, in a more general sense, they serve as models of solids in general since they exhibit nearly the full range of solid state properties

Lanthanides-clay nanocomposites: Synthesis, characterization and optical properties

International Nuclear Information System (INIS)

Celedon, Salvador; Quiroz, Carolina; Gonzalez, Guillermo; Sotomayor Torres, Clivia M.; Benavente, Eglantina

2009-01-01

Complexes of Europium(III) and Terbium(III) with 2,2-bipyridine and 1,10-phenanthroline were inserted into Na-bentonite by ion exchange reactions at room temperature. The products display interlaminar distances and stoichiometries in agreement with the ion exchange capacity and the interlayer space available in the clay. The optical properties of the intercalates, being qualitatively similar to those of the free complexes, are additionally improved with respect to exchange processes with the medium, especially in a moist environment. The protection again hydrolysis, together with the intensity of the optical transition 5 D 0 - 5 F 2 observed in the nanocomposite, makes these products promising for the development of novel optical materials

Submicron, soft x-ray fluorescence imaging

International Nuclear Information System (INIS)

La Fontaine, B.; MacDowell, A.A.; Tan, Z.; White, D.L.; Taylor, G.N.; Wood, O.R. II; Bjorkholm, J.E.; Tennant, D.M.; Hulbert, S.L.

1995-01-01

Submicron fluorescence imaging of soft x-ray aerial images, using a high resolution fluorescent crystal is reported. Features as small as 0.1 μm were observed using a commercially available single-crystal phosphor, STI-F10G (Star Tech Instruments Inc. P. O. Box 2536, Danbury, CT 06813-2536), excited with 139 A light. Its quantum efficiency was estimated to be 5--10 times that of sodium salicylate and to be constant over a broad spectral range from 30 to 400 A. A comparison with a terbium-activated yttrium orthosilicate fluorescent crystal is also presented. Several applications, such as the characterization of the aerial images produced by deep ultraviolet or extreme ultraviolet lithographic exposure tools, are envisaged

High temperature X-ray topography on silicon and gallium arsenide

International Nuclear Information System (INIS)

Krueger, H.E.

1976-01-01

Beginning with a review of the different theories of X-ray scattering on perfect and deformed crystals, results of the dynamic theory relevant specifically for X-ray topography are presented. The reflected intensity recorded in a X-ray topogram is discussed as a function of the angle of incidence, crystal thickness and lateral distribution. These results, together with fundamental relations of the DT which are developed in the annex, give insight into the contrasts induced by defects. Using practical examples Borrmann contrast, contrast produced by point defect agglomerates and dislocations and the Burgers vector method are explained. Thus the whole spectrum of contrast phenomena observed in the experimental part of the paper is presented. The experimental results were achieved with a high-temperature X-ray topography facility constructed for this purpose. The facility is described. (orig./HPOE) [de

First principles calculation of two dimensional antimony and antimony arsenide

Energy Technology Data Exchange (ETDEWEB)

Pillai, Sharad Babu, E-mail: sbpillai001@gmail.com; Narayan, Som; Jha, Prafulla K. [Department. of Physics, Faculty of Science, The M. S. University of Baroda, Vadodara-390002 (India); Dabhi, Shweta D. [Department of Physics, Maharaja Krishnakumarsinhji Bhavnagar University, Bhavnagar-364001 (India)

2016-05-23

This work focuses on the strain dependence of the electronic properties of two dimensional antimony (Sb) material and its alloy with As (SbAs) using density functional theory based first principles calculations. Both systems show indirect bandgap semiconducting character which can be transformed into a direct bandgap material with the application of relatively small strain.

Temperature dependence of the two photon absorption in indium arsenide

International Nuclear Information System (INIS)

Berryman, K.W.; Rella, C.W.

1995-01-01

Nonlinear optical processes in semiconductors have long been a source of interesting physics. Two photon absorption (TPA) is one such process, in which two photons provide the energy for the creation of an electron-hole pair. Researchers at other FEL centers have studied room temperature TPA in InSb, InAs, and HgCdTe. Working at the Stanford Picosecond FEL Center, we have extended and refined this work by measuring the temperature dependence of the TPA coefficient in InAs over the range from 80 to 350 K at four wavelengths: 4.5, 5.06, 6.01, and 6.3 microns. The measurements validate the functional dependence of recent band structure calculations with enough precision to discriminate parabolic from non-parabolic models, and to begin to observe smaller effects, such as contributions due to the split-off band. These experiments therefore serve as a strong independent test of the Kane band theory, as well as providing a starting point for detailed observations of other nonlinear absorption mechanisms

High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

Science.gov (United States)

Ahmari, David Abbas

Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

Magnetoelectric Effect in Gallium Arsenide-Nickel-Tin-Nickel Multilayer Structures

Science.gov (United States)

Filippov, D. A.; Tikhonov, A. A.; Laletin, V. M.; Firsova, T. O.; Manicheva, I. N.

2018-02-01

Experimental data have been presented for the magnetoelectric effect in nickel-tin-nickel multilayer structures grown on a GaAs substrate by cathodic electrodeposition. The method of fabricating these structures has been described, and the frequency dependence of the effect has been demonstrated. It has been shown that tin used as an intermediate layer reduces mechanical stresses due to the phase mismatch at the Ni-GaAs interface and, thus, makes it possible to grow good structures with a 70-μm-thick Ni layer. The grown structures offer good adhesion between layers and a high Q factor.

High-pressure phase transition and phase diagram of gallium arsenide

Science.gov (United States)

Besson, J. M.; Itié, J. P.; Polian, A.; Weill, G.; Mansot, J. L.; Gonzalez, J.

1991-09-01

Under hydrostatic pressure, cubic GaAs-I undergoes phase transitions to at least two orthorhombic structures. The initial phase transition to GaAs-II has been investigated by optical-transmittance measurements, Raman scattering, and x-ray absorption. The structure of pressurized samples, which are retrieved at ambient, has been studied by x-ray diffraction and high-resolution diffraction microscopy. Various criteria that define the domain of stability of GaAs-I are examined, such as the occurrence of crystalline defects, the local variation in atomic coordination number, or the actual change in crystal structure. These are shown not to occur at the same pressure at 300 K, the latter being observable only several GPa above the actual thermodynamic instability pressure of GaAs-I. Comparison of the evolution of these parameters on increasing and decreasing pressure locates the thermodynamic transition region GaAs-I-->GaAs-II at 12+/-1.5 GPa and at 300 K that is lower than generally reported. The use of thermodynamic relations around the triple point, and of regularities in the properties of isoelectronic and isostructural III-V compounds, yields a phase diagram for GaAs which is consistent with this value.

Optical verification of the valence band structure of cadmium arsenide

NARCIS (Netherlands)

Gelten, M.J.; Es, van C.M.; Blom, F.A.P.; Jongeneelen, J.W.F.

1980-01-01

Optical absorption measurements were performed on thin single crystalline samples of Cd3As2 at temperatures of 300 K and 10 K. At low temperature the interband absorption coefficient shows clearly two steps due to direct transitions from the heavy hole and light hole valence bands to the conduction

Size-effects in indium gallium arsenide nanowire field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Zota, Cezar B., E-mail: cezar.zota@eit.lth.se; Lind, E. [Department of Electrical and Information Technology, Lund University, Lund 22101 (Sweden)

2016-08-08

We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., V{sub T} variability, and on-current, through the mean free path, in the choice of the channel material.

Photo-Ultrasonic Study of Extrinsic Photoconductivity in N-Gallium Arsenide

Science.gov (United States)

Bradshaw, Randall Grant

We have measured the velocity of piezoelectrically -active, ultrasonic shear waves between 1.5 K and 68 K for undoped and for oxygen-doped n-type GaAs, during and after illumination at 4.2 K. The results reveal photoconductivity, persistent photoconductivity, and thermally stimulated conductivity. In both samples the Fermi level in the dark is controlled by excess non-shallow donors near 0.2 eV below the conduction band. Analysis of these effects in oxygen-doped material indicates that there are mid-gap and much shallower photoionizable levels and that there is an electron trap near 20 meV below the conduction band. The undoped n-GaAs sample exhibits photoconductivity quenching with photons in the range 0.95-1.26 eV which, by analysis of the quenching rate, is attributed to the EL2 defect. In addition, levels with large hole capture coefficients have been detected.

Electrical properties of gallium arsenide irradiated with electrons and neutrons

International Nuclear Information System (INIS)

Kol'chenko, T.I.; Lomako, V.M.

1975-01-01

A study was made of changes in the electrical properties of GaAs doped with Te, S, Se, Si, Ge, Sn (n 0 approximately 10 16 -10 18 cm -3 ) and irradiated either with 2.5-28 MeV electrons or with fast reactor neutrons. An analysis of changes in the electron density indicated that the rate of carrier removal by electron bombardment was independent of the dopant but was governed by isolated radiation defects. The change in the mobility due to irradiation with 2.5-10 MeV electrons was also governed by isolated defects. When the electron energy was increased to 28 MeV the main contribution to the change in the mobility was made by defect clusters. In the neutron-irradiation case the changes in the carrier density and mobility were mainly due to defect clusters and the nature of changes in the electrical properties was again independent of the dopant

Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide.

Science.gov (United States)

Niu, Q; Yu, W C; Yip, K Y; Lim, Z L; Kotegawa, H; Matsuoka, E; Sugawara, H; Tou, H; Yanase, Y; Goh, Swee K

2017-06-05

In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attributed to exotic electron scattering mechanisms. Recently, linear magnetoresistance has been observed in many Dirac materials, in which the electron-electron correlation is relatively weak. The strongly correlated helimagnet CrAs undergoes a quantum phase transition to a nonmagnetic superconductor under pressure. Here we observe, near the magnetic instability, a large and non-saturating quasilinear magnetoresistance from the upper critical field to 14 T at low temperatures. We show that the quasilinear magnetoresistance may arise from an intricate interplay between a nontrivial band crossing protected by nonsymmorphic crystal symmetry and strong magnetic fluctuations.

Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Huffaker, Diana [Univ. of California, Los Angeles, CA (United States); Hubbard, Seth [Rochester Inst. of Technology, NY (United States); Norman, Andrew [National Renewable Energy Lab. (NREL), Golden, CO (United States)

2015-07-31

This project aimed to develop solar cells that can help reduce cost per watt. This work focused on developing solar cells that utilize quantum dot (QD) nanomaterials to provide multijunction solar cell efficiency at the cost of single junction solar cell. We focused on a novel concept known as intermediate band solar cells (IBSC) where an additional energy band is inserted in a single solar cell to accommodate sub-bandgap photons absorption which otherwise are lost through transmission. The additional energy band can be achieved by growing QDs within a solar cell p-n junction. Though numerous studies have been conducted to develop such QD systems, very small improvements in solar energy conversion efficiency have been reported. This is mainly due to non-optimal material parameters such as band gap, band offset etc. In this work, we identified and developed a novel QD material system that meets the requirements of IBSC more closely than the current state-of-the-art technology. To achieve these goals, we focused on three important areas of solar cell design: band structure calculations of new materials, efficient device design for high efficiency, and development of new semiconductor materials. In this project, we focused on III-Sb materials as they possess a wide range of energy bandgaps from 0.2 eV to 2eV. Despite the difficulty involved in realizing these materials, we were successfully developed these materials through a systematic approach. Materials studied in this work are AlAsSb (Aluminum Arsenide Antimonide), InAlAs (Indium Aluminum Arsenide) and InAs (Indium Arsenide). InAs was used to develop QD layers within AlAsSb and InAlAs p-n junctions. As the QDs have very small volume, up to 30 QD layers been inserted into the p-n junction to enhance light absorption. These QD multi-stack devices helped in understanding the challenges associated with the development of quantum dot solar cells. The results from this work show that the quantum dot solar cells indeed