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Sample records for teos plasma-enhanced cvd

  1. Graphene Synthesis by Plasma-Enhanced CVD Growth with Ethanol

    OpenAIRE

    Campo, T.; Cotto, M.; Márquez, F.; Elizalde, E.; Morant, C.

    2016-01-01

    A modified route to synthesize graphene flakes is proposed using the Chemical Vapor Deposition (CVD) technique, by using copper substrates as supports. The carbon source used was ethanol, the synthesis temperature was 950°C and the pressure was controlled along the whole process. In this CVD synthesis process the incorporation of the carbon source was produced at low pressure and 950°C inducing the appearance of a plasma blue flash inside the quartz tube. Apparently, the presence of this plas...

  2. Growth and characterization of nanodiamond layers prepared using plasma enhanced linear antennas microwave CVD system

    Czech Academy of Sciences Publication Activity Database

    Fendrych, František; Taylor, Andrew; Peksa, Ladislav; Kratochvílová, Irena; Vlček, J.; Řezáčová, V.; Petrák, V.; Kluiber, Z.; Fekete, Ladislav; Liehr, M.; Nesládek, M.

    2010-01-01

    Roč. 43, č. 37 (2010), 374018/1-374018/6 ISSN 0022-3727 R&D Projects: GA AV ČR KAN200100801; GA AV ČR KAN300100801; GA AV ČR KAN301370701 Institutional research plan: CEZ:AV0Z10100520 Keywords : nanodiamond, * thin films * PE MW CVD * linear antennas Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.105, year: 2010

  3. Growth and characterization of nanodiamond layers prepared using the plasma-enhanced linear antennas microwave CVD system

    Energy Technology Data Exchange (ETDEWEB)

    Fendrych, Frantisek; Taylor, Andrew; Peksa, Ladislav; Kratochvilova, Irena; Kluiber, Zdenek; Fekete, Ladislav [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, CZ-18221 Prague 8 (Czech Republic); Vlcek, Jan [Department of Physics and Measurement, Institute of Chemical Technology Prague, Technicka 5, CZ-16628 Prague 6 (Czech Republic); Rezacova, Vladimira; Petrak, Vaclav [Faculty of Biomedical Engineering, Czech Technical University, Sitna 3105, CZ-27201 Kladno 2 (Czech Republic); Liehr, Michael [Leybold Optics Dresden GmbH, Zur Wetterwarte 50, D-01109 Dresden (Germany); Nesladek, Milos, E-mail: fendrych@fzu.c [IMOMEC division, IMEC, Institute for Materials Research, University Hasselt, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)

    2010-09-22

    Industrial applications of plasma-enhanced chemical vapour deposition (CVD) diamond grown on large area substrates, 3D shapes, at low substrate temperatures and on standard engineering substrate materials require novel plasma concepts. Based on the pioneering work of the group at AIST in Japan, the high-density coaxial delivery type of plasmas has been explored (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). However, an important challenge is to obtain commercially interesting growth rates at very low substrate temperatures. In this work we introduce the concept of novel linear antenna sources, designed at Leybold Optics Dresden, using high-frequency pulsed MW discharge with a high plasma density. This type of pulse discharges leads to the preparation of nanocrystalline diamond (NCD) thin films, compared with ultra-NCD thin films prepared in (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). We present optical emission spectroscopy data for the CH{sub 4}-CO{sub 2}-H{sub 2} gas chemistry and we discuss the basic properties of the NCD films grown.

  4. Synthesis of few-layer graphene on a Ni substrate by using DC plasma enhanced chemical vapor deposition (PE-CVD)

    International Nuclear Information System (INIS)

    Kim, Jeong Hyuk; Castro, Edward Joseph; Hwang, Yong Gyoo; Lee, Choong Hun

    2011-01-01

    In this work, few-layer graphene (FLG) was successfully grown on polycrystalline Ni a large scale by using DC plasma enhanced chemical vapor deposition (DC PE-CVD), which may serve as an alternative route in large-scale graphene synthesis. The synthesis time had an effect on the quality of the graphene produced. The applied DC voltage, on the other hand, influenced the minimization of the defect densities in the graphene grown. We also present a method of producing a free-standing polymethyl methacrylate (PMMA)/graphene membrane on a FeCl 3(aq) solution, which could then be transferred to the desired substrate.

  5. Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation

    Science.gov (United States)

    Lu, Yimin; Makihara, Katsunori; Takeuchi, Daichi; Ikeda, Mitsuhisa; Ohta, Akio; Miyazaki, Seiichi

    2017-06-01

    Hydrogenated microcrystalline (µc) Si/Ge heterostructures were prepared on quartz substrates by plasma-enhanced chemical vapor deposition (CVD) from VHF inductively coupled plasma of SiH4 just after GeH4 employing Ni nanodots (NDs) as seeds for crystalline nucleation. The crystallinity of the films and the progress of grain growth were characterized by Raman scattering spectroscopy and atomic force microscopy (AFM), respectively. When the Ge films were grown on Ni-NDs at 250 °C, the growth of µc-Ge films with crystallinity as high as 80% was realized without an amorphous phase near the Ge film/quartz substrate interface. After the subsequent Si film deposition at 250 °C, fine grains were formed in the early stages of film growth on µc-Ge films with compositional mixing (µc-Si0.85Ge0.15:H) caused by the release of large lattice mismatch between c-Si and c-Ge. With further increase in Si:H film thickness, the formation of large grain structures accompanied by fine grains was promoted. These results suggest that crystalline Si/Ge heterojunctions can be used for efficient carrier collection in solar cell application.

  6. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    Science.gov (United States)

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  7. Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements

    Science.gov (United States)

    Truyen, Nguyen Xuan; Ohta, Akio; Makihara, Katsunori; Ikeda, Mitsuhisa; Miyazaki, Seiichi

    2018-01-01

    The control of chemical composition and bonding features at a SiO2/GaN interface is a key to realizing high-performance GaN power devices. In this study, an ∼5.2-nm-thick SiO2 film has been deposited on an epitaxial GaN(0001) surface by remote O2-plasma-enhanced chemical vapor deposition (O2-RPCVD) using SiH4 and Ar/O2 mixture gases at a substrate temperature of 500 °C. The depth profile of chemical structures and electronic defects of the O2-RPCVD SiO2/GaN structures has been evaluated from a combination of SiO2 thinning examined by X-ray photoelectron spectroscopy (XPS) and the total photoelectron yield spectroscopy (PYS) measurements. As a highlight, we found that O2-RPCVD is effective for fabricating an abrupt SiO2/GaN interface.

  8. Toroidal plasma enhanced CVD of diamond films

    International Nuclear Information System (INIS)

    Zvanya, John; Cullen, Christopher; Morris, Thomas; Krchnavek, Robert R.; Holber, William; Basnett, Andrew; Basnett, Robert; Hettinger, Jeffrey

    2014-01-01

    An inductively coupled toroidal plasma source is used as an alternative to microwave plasmas for chemical vapor deposition of diamond films. The source, operating at a frequency of 400 kHz, synthesizes diamond films from a mixture of argon, methane, and hydrogen. The toroidal design has been adapted to create a highly efficient environment for diamond film deposition: high gas temperature and a short distance from the sample to the plasma core. Using a toroidal plasma geometry operating in the medium frequency band allows for efficient (≈90%) coupling of AC line power to the plasma and a scalable path to high-power and large-area operation. In test runs, the source generates a high flux of atomic hydrogen over a large area, which is favorable for diamond film growth. Using a deposition temperature of 900–1050 °C and a source to sample distance of 0.1–2.0 cm, diamond films are deposited onto silicon substrates. The results showed that the deposition rate of the diamond films could be controlled using the sample temperature and source to sample spacing. The results also show the films exhibit good-quality polycrystalline diamond as verified by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. The scanning electron microscopy and x-ray diffraction results show that the samples exhibit diamond (111) and diamond (022) crystallites. The Raman results show that the sp 3 peak has a narrow spectral width (FWHM 12 ± 0.5 cm −1 ) and that negligible amounts of the sp 2 band are present, indicating good-quality diamond films

  9. Study on stability of a-SiCOF films deposited by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Ding Shijin; Zhang Qingquan; Wang Pengfei; Zhang Wei; Wang Jitao

    2001-01-01

    Low-dielectric-constant a-SiCOF films have been prepared from TEOS, C 4 F 8 and Ar by using plasma enhanced chemical vapor deposition method. With the aid of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), the chemical bonding configuration, thermal stability and resistance to water of the films are explored

  10. Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

    International Nuclear Information System (INIS)

    Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

    2006-01-01

    Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

  11. Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

    NARCIS (Netherlands)

    Ponomarev, M.; Verheijen, M.A.; Keuning, W.; Sanden, van de M.C.M.; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control

  12. Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

    Science.gov (United States)

    Cassell, Alan M.; Li, J.; Ye, Q.; Koehne, J.; Chen, H.; Meyyappan, M.

    2004-01-01

    The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical biosensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

  13. Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Katsuyuki Okada

    2007-01-01

    Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

  14. TEO LT hakkab kaotama atraktiivsust / Romet Kreek

    Index Scriptorium Estoniae

    Kreek, Romet, 1972-

    2011-01-01

    Autori sõnul on Leedu telekomiettevõtte TEO LT puhul raske oodata, et käive ja kasum kasvaksid, parimal juhul on need stabiilsed. Osalt on selle põhjuseks tehnoloogilised muutused, osalt suuromaniku poliitika. TEO LT I kvartali majandusnäitajatest

  15. Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

    OpenAIRE

    Barranco Quero, Ángel; Cotrino Bautista, José; Yubero Valencia, Francisco; Espinós, J. P.; Rodríguez González-Elipe, Agustín

    2004-01-01

    Synthesis of porous SiO2 thin films in room temperature was carried out using plasma enhanced chemical vapor deposition (CVD) in an electron cyclotron resonance microwave reactor with a downstream configuration.The gas adsorption properties and the type of porosity of the SiO2 thin films were assessed by adsorption isotherms of toluene at room temperature.The method could also permit the tailoring synthesis of thin films when both composition and porosity can be simultaneously and independent...

  16. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  17. Metallo–organic compound-based plasma enhanced CVD of ZrO2 ...

    Indian Academy of Sciences (India)

    Unknown

    require a passivation barrier (oxynitride or nitride) to prevent interfacial layer growth (Ngai et al 2000). Zirconium dioxide (ZrO2) is one of the few high-k dielectrics predicted to be thermodynamically stable in contact with silicon (Qi et al 1999). ZrO2 was also characterized for low electrical conductivity and chemical inertness ...

  18. Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

    International Nuclear Information System (INIS)

    Su, Meiying; Yu, Daquan; Liu, Yijun; Wan, Lixi; Song, Chongshen; Dai, Fengwei; Xue, Kai; Jing, Xiangmeng; Guidotti, Daniel

    2014-01-01

    The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO 2 films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity

  19. Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

    Energy Technology Data Exchange (ETDEWEB)

    Su, Meiying, E-mail: sumeiying@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Yu, Daquan, E-mail: yudaquan@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Jiangsu R and D Center for Internet of Things, Wuxi 214135 (China); Liu, Yijun [Piotech Co. Ltd, Shenyang 110179 (China); Wan, Lixi [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Song, Chongshen; Dai, Fengwei [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Xue, Kai [National Center for Advanced Packaging, Wuxi 214135 (China); Jing, Xiangmeng [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Guidotti, Daniel [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China)

    2014-01-01

    The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO{sub 2} films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity.

  20. Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

    DEFF Research Database (Denmark)

    Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.

    2005-01-01

    The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...

  1. Ca teos report in register N 13377

    International Nuclear Information System (INIS)

    Pena, S; Arrighetti, R.

    2011-01-01

    This work is about a report about ca teos carried out in register N 13377 in the department of Canelones to know the depth of the field. The drilling done allowed to identify granite and clay. This granite outcrops are developed in the east of the middle course of the stream Pando

  2. Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

    International Nuclear Information System (INIS)

    Sugawara, Katsutoshi; Sakuraba, Masao; Murota, Junichi

    2010-01-01

    Using an 84% relaxed Ge(100) buffer layer formed on Si(100) by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD), influence of strain upon electrical characteristics of B-doped Si film epitaxially grown on the Ge buffer have been investigated. For the thinner B-doped Si film, surface strain amount is larger than that of the thicker film, for example, strain amount reaches 2.0% for the thickness of 2.2 nm. It is found that the hole mobility is enhanced by the introduction of strain to Si, and the maximum enhancement of about 3 is obtained. This value is higher than that of the usually reported mobility enhancement by strain using Si 1 -x Ge x buffer. Therefore, introduction of strain using relaxed Ge film formed by ECR plasma enhanced CVD is useful to improve future Si-based device performance.

  3. Zn2(TeO3Br2

    Directory of Open Access Journals (Sweden)

    Mats Johnsson

    2008-05-01

    Full Text Available Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetrahedra, and [TeO3E] tetrahedra (E being the 5s2 lone pair of Te4+ joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3Br2 is isostructural with the synthetic compounds Zn2(TeO3Cl2, CuZn(TeO32, Co2(TeO3Br2 and the mineral sophiite, Zn2(SeO3Cl2.

  4. CVD in nuclear energy

    International Nuclear Information System (INIS)

    Nickel, H.

    1981-08-01

    CVD-deposited pyrocarbon, especially the coatings of nuclear fuel kernels show a structure depending on many parameters such as deposition temperature, nature and pressure of the pyrolysis gas, nature of the substrate, geometry of the deposition system, etc. Because of the variety of pyrocarbon different characterization methods have been developed or qualified for this new application. Additionally classical characterization procedures are available. Beside theoretical aspects concerning the formation and deposition mechanism of pyrocarbon from the gas phase the behaviour of such coatings under irradiation with fast neutrons is discussed. (orig.) [de

  5. Transport mechanisms through PE-CVD coatings: influence of temperature, coating properties and defects on permeation of water vapour

    International Nuclear Information System (INIS)

    Kirchheim, Dennis; Jaritz, Montgomery; Hopmann, Christian; Dahlmann, Rainer; Mitschker, Felix; Awakowicz, Peter; Gebhard, Maximilian; Devi, Anjana; Brochhagen, Markus; Böke, Marc

    2017-01-01

    Gas transport mechanisms through plastics are usually described by the temperature-dependent Arrhenius-model and compositions of several plastic layers are represented by the CLT. When it comes to thin films such as plasma-enhanced chemical vapour deposition (PE-CVD) or plasma-enhanced atomic layer deposition (PE-ALD) coatings on substrates of polymeric material, a universal model is lacking. While existing models describe diffusion through defects, these models presume that permeation does not occur by other means of transport mechanisms. This paper correlates the existing transport models with data from water vapour transmission experiments. (paper)

  6. Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers

    NARCIS (Netherlands)

    Starostin, S. A.; Keuning, W.; Schalken, J.; Creatore, M.; Kessels, W. M. M.; Bouwstra, J. B.; van de Sanden, M. C. M.; de Vries, H. W.

    2016-01-01

    The synergy between fast (1600 nm · min−1), roll-to-roll plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 layers and plasma-assisted atomic layer deposited (PA-ALD) ultra-thin Al2O3 films has been investigated in terms of moisture permeation barrier properties. The effective and intrinsic

  7. Synergy between plasma-assisted ALD and roll-to-roll atmospheric pressure PE-CVD processing of moisture barrier films on polymers

    NARCIS (Netherlands)

    Starostin, S.A.; Keuning, W.; Schalken, J.R.G.; Creatore, M.; Kessels, W.M.M.; Bouwstra, J.B.; Sanden, van de M.C.M.; Vries, de H.W.

    2016-01-01

    The synergy between fast (1600 nm · min−1), roll-to-roll plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 layers and plasma-assisted atomic layer deposited (PA-ALD) ultra-thin Al2O3 films has been investigated in terms of moisture permeation barrier properties. The effective and intrinsic

  8. FY1995 development of a clean CVD process by evaluation and control of gas phase nucleation phenomena; 1995 nendo kisokaku seisei gensho no hyoka to seigyo ni yoru clean CVD process no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose of this study is to develop a high-rate and clean chemical vapor deposition (CVD) process as a breakthrough technique to overcome the problems that particles generated in the gas phase during CVD process for preparation of functional thin films cause reduced product yield and deterioration of the films. In the CVD process proposed here, reactant gas and generated particles are electrically charged to control the motion of them with an electric field. In this study, gas-phase nucleation phenomena are evaluated both theoretically and experimentally. A high-rate, ionized CVD method is first developed, in which reactant gas and generated particles are charged with negative ions generated from a radioisotope source and the UV/photoelectron method, and the motion of the charged gas and particles is controlled with an electric field. Charging and transport processes of fine particles are then investigated experimentally and theoretically to develop a clean CVD method in which generated particles are removed with the electric forces. As a result, quantitative evaluation of the charging and transport process was made possible. We also developed devices for measuring the size distribution and concentration of fine particles in low pressure gas such as those found in plasma CVD processes. In addition, numerical simulation and experiments in this study for a TEOS/O{sub 3} CVD process to prepare thin films could determine reaction rates which have not been known so far and give information on selecting good operation conditions for the process. (NEDO)

  9. Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires

    International Nuclear Information System (INIS)

    Hou, W C; Hong, Franklin Chau-Nan

    2009-01-01

    This study investigates the growth of GaN nanowires by controlling the surface diffusion of Ga species on sapphire in a plasma-enhanced chemical vapor deposition (CVD) system. Under nitrogen-rich growth conditions, Ga has a tendency to adsorb on the substrate surface diffusing to nanowires to contribute to their growth. The significance of surface diffusion on the growth of nanowires is dependent on the environment of the nanowire on the substrate surface as well as the gas phase species and compositions. Under nitrogen-rich growth conditions, the growth rate is strongly dependent on the surface diffusion of gallium, but the addition of 5% hydrogen in nitrogen plasma instantly diminishes the surface diffusion effect. Gallium desorbs easily from the surface by reaction with hydrogen. On the other hand, under gallium-rich growth conditions, nanowire growth is shown to be dominated by the gas phase deposition, with negligible contribution from surface diffusion. This is the first study reporting the inhibition of surface diffusion effects by hydrogen addition, which can be useful in tailoring the growth and characteristics of nanowires. Without any evidence of direct deposition on the nanowire surface, gallium and nitrogen are shown to dissolve into the catalyst for growing the nanowires at 900 deg. C.

  10. One-step synthesis of chlorinated graphene by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Liwei; Zhang, Hui; Zhang, Pingping; Sun, Xuhui, E-mail: xhsun@suda.edu.cn

    2015-08-30

    Highlights: • We developed a simple approach to synthesize the single layer chlorinated graphene. • CuCl{sub 2} on Cu surface is used as Cl source under the plasma treatment. • The formation of covalent C−Cl bond has been investigated by Raman and XPS. • Raman results indicate the p-type doping effect of chlorination. - Abstract: We developed an approach to synthesize the chlorinated single layer graphene (Cl-G) by one-step plasma enhanced chemical vapor deposition. Copper foil was simply treated with hydrochloric acid and then CuCl{sub 2} formed on the surface was used as Cl source under the assistance of plasma treatment. Compared with other two-step methods by post plasma/photochemical treatment of CVD-grown single layer graphene (SLG), one-step Cl-G synthesis approach is quite straightforward and effective. X-ray photoelectron spectroscopy (XPS) revealed that ∼2.45 atom% Cl remained in SLG. Compared with the pristine SLG, the obvious blue shifts of G band and 2D band along with the appearance of D’ band and D + G band in the Raman spectra indicate p-type doping of Cl-G.

  11. Organosilicon thin films deposited by plasma enhanced CVD:Thermal changes of chemical structure and mechanical properties

    Czech Academy of Sciences Publication Activity Database

    Zajíčková, L.; Buršíková, V.; Kučerová, Z.; Franclová, J.; Siahel, P.; Peřina, Vratislav; Macková, Anna

    2007-01-01

    Roč. 68, 5-6 (2007), s. 1255-1259 ISSN 0022-3697 R&D Projects: GA ČR GA202/07/1669 Institutional research plan: CEZ:AV0Z10480505 Keywords : hin films * organometallic compounds * plasma deposition Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.899, year: 2007

  12. In situ growth rate measurements during plasma-enhanced chemical vapour deposition of vertically aligned multiwall carbon nanotube films

    International Nuclear Information System (INIS)

    Joensson, M; Nerushev, O A; Campbell, E E B

    2007-01-01

    In situ laser reflectivity measurements are used to monitor the growth of multiwalled carbon nanotube (MWCNT) films grown by DC plasma-enhanced chemical vapour deposition (PECVD) from an iron catalyst film deposited on a silicon wafer. In contrast to thermal CVD growth, there is no initial increase in the growth rate; instead, the initial growth rate is high (as much as 10 μm min -1 ) and then drops off rapidly to reach a steady level (2 μm min -1 ) for times beyond 1 min. We show that a limiting factor for growing thick films of multiwalled nanotubes (MWNTs) using PECVD can be the formation of an amorphous carbon layer at the top of the growing nanotubes. In situ reflectivity measurements provide a convenient technique for detecting the onset of the growth of this layer

  13. Nanostructure and optical properties of CeO{sub 2} thin films obtained by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Barreca, D.; Bruno, G.; Gasparotto, A.; Losurdo, M.; Tondello, E

    2003-12-15

    In the present study, Spectroscopic Ellipsometry (SE) is used to investigate the interrelations between nanostructure and optical properties of CeO{sub 2} thin films deposited by Plasma-Enhanced Chemical Vapor Deposition (PE-CVD). The layers were synthesized in Ar and Ar-O{sub 2} plasmas on Si(100) substrates at temperatures lower than 300 deg. C. Both the real and imaginary parts of the complex dielectric functions and, subsequently, the optical constants of the films are derived up to 6.0 eV photon energy. Particular attention is devoted to the influence of synthesis conditions and sample properties on the optical response, taking into account the effects of surface roughness and SiO{sub 2} interface layer on Si.

  14. Zn2(TeO3)Br2

    Science.gov (United States)

    Zhang, Dong; Johnsson, Mats

    2008-01-01

    Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3)Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetra­hedra, and [TeO3 E] tetra­hedra (E being the 5s 2 lone pair of Te4+) joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3)Br2 is isostructural with the synthetic compounds Zn2(TeO3)Cl2, CuZn(TeO3)2, Co2(TeO3)Br2 and the mineral sophiite, Zn2(SeO3)Cl2. PMID:21202162

  15. Electron collision cross section sets of TMS and TEOS vapours

    Science.gov (United States)

    Kawaguchi, S.; Takahashi, K.; Satoh, K.; Itoh, H.

    2017-05-01

    Reliable and detailed sets of electron collision cross sections for tetramethylsilane [TMS, Si(CH3)4] and tetraethoxysilane [TEOS, Si(OC2H5)4] vapours are proposed. The cross section sets of TMS and TEOS vapours include 16 and 20 kinds of partial ionization cross sections, respectively. Electron transport coefficients, such as electron drift velocity, ionization coefficient, and longitudinal diffusion coefficient, in those vapours are calculated by Monte Carlo simulations using the proposed cross section sets, and the validity of the sets is confirmed by comparing the calculated values of those transport coefficients with measured data. Furthermore, the calculated values of the ionization coefficient in TEOS/O2 mixtures are compared with measured data to confirm the validity of the proposed cross section set.

  16. TEO - vana rahamasin töötab ikka veel / Steffan Andersson

    Index Scriptorium Estoniae

    Andersson, Steffan

    2006-01-01

    Ülevaade Leedu kommunikatsioonifirma TEO (endine Leedu Telekom, praegu 60% mahus TeliaSonera tütarfirma) majandustegevusest ja aktsia hinnast. Graafik: TEO aktsia kurss 24. okt. 2005 - 24. okt. 2006

  17. Teo omistamine riigile rahvusvahelises õiguses : [bakalaureusetöö] / Kadri Paris ; Tartu Ülikool, õigusteaduskond ; juhendaja: Juhani Kortteinen

    Index Scriptorium Estoniae

    Paris, Kadri

    2003-01-01

    Riigivastutuse areng rahvusvahelises õiguses, riigivastutuse üldised põhimõtted, teo riigile omistamine õigusliku sideme olemasolul teo toimepanija ja riigi vahel, riigi vastutus eraisikute tegude eest

  18. Response of CVD diamond detectors to alpha radiation

    Energy Technology Data Exchange (ETDEWEB)

    Souw, E.-K. [Brookhaven National Lab., Upton, NY (United States); Meilunas, R.J. [Northrop-Grumman Corporation, Bethpage, NY 11714-3582 (United States)

    1997-11-21

    This article describes some results from an experiment with CVD diamond films used as {alpha} particle detectors. It demonstrates that bulk polarization can be effectively stopped within a reasonable time interval. This will enable detector calibration and quantitative measurement. A possible mechanism for the observed polarization quenching is discussed. It involves two types of carrier traps and a tentative band-gap model derived from the results of photoconductive current measurements. The experiment was set up mainly to investigate {alpha} detection properties of polycrystalline diamond films grown by the technique of microwave plasma enhanced chemical vapor deposition. For comparison, two commercially purchased diamond wafers were also investigated, i.e., one grown by the DC arc jet method, and the other, a type-IIa natural diamond wafer (not preselected). The best response to {alpha} particles was obtained using diamond thin-films grown by the microwave PECVD method, followed by the type-IIa natural diamond, and finally, the CVD diamond grown by the DC arc jet technique. (orig.). 43 refs.

  19. In situ mid-infrared analyses of reactive gas-phase intermediates in TEOS/Ozone SAPCVD

    International Nuclear Information System (INIS)

    Whidden, Thomas K.; Doiron, Sarah

    1998-01-01

    In this report, we present in situ characterizations of chemical vapour deposition (CVD) reactors used in silicon dioxide thin film depositions. The characterizations are based on Fourier transform infrared spectroscopy. The infrared absorption data are interpreted within the context of process and thin film properties and the bearing of the spectroscopic data upon the chemical mechanisms extant in the deposition reaction. The relevance of the interpretations to real-time process control is discussed. The process under study in this work is TEOS/ozone-based deposition of silicon dioxide thin films at subatmospheric pressures. This process exhibits many desirable properties but has fundamental problems that may be solvable by reaction control based on in situ analyses and the real-time manipulation of reagent concentrations and process conditions. Herein we discuss our preliminary data on characterizations of TEOS/ozone chemistries in commercial reactor configurations. Reaction products and reactive intermediate species are detected and identified. Quantitative in situ measurements of the reagent materials are demonstrated. Preliminary correlations of these data with process and thin film properties are discussed

  20. Jungi salajane teos toodi seifist lagedale / Kaarel Kressa

    Index Scriptorium Estoniae

    Kressa, Kaarel, 1983-

    2009-01-01

    Carl Gustav Jungi Esimese maailmasõja järel kirjutatud teose "Liber Novus" käsikiri pannakse välja New Yorgi Rubini muuseumis. Samal päeval ilmub teos ka inglise ja saksa keeles raamatupoodidesse (kirjastaja W. W. Norton&Company)

  1. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  2. CVD - main concepts, applications and restrictions

    International Nuclear Information System (INIS)

    Bliznakovska, B.; Milosevski, M.; Krawczynski, S.; Meixner, C.; Koetter, H.R.

    1993-01-01

    Despite of the fact that the existing literature covering the last two decades is plentiful with data related to CVD, this document is an attempt to provide to a reader a concise information about the nature of CVD technique at production of technologically important materials as well as to point at special references. The text is devided into three separate sections. The first section, The Main Features of CVD, is intended to give a complete comprehensive picture of the CVD technique through process description and characterization. The basic principles of thermodynamics, CVD chemical reactions classification, CVD chemical kinetics aspects and physics of CVD (with particular attention on the gas-flow phenomena) are included. As an additional aspect, in CVD unavoidable aspect however, the role of the coating/substrate compatibility on the overall process was outlined. The second section, CVD Equipment, concerns on the pecularities of the complete CVD unit pointing out the individual significances of the separate parts, i.e. pumping system, reactor chamber, control system. The aim of this section is to create to a reader a basic understanding of the arising problems but connected to be actual CVD performance. As a final goal of this review the reader's attention is turned upon the CVD applications for production of an up-to-date important class of coatings such as multilayer coatings. (orig.)

  3. Plasma-enhanced synthesis of green flame retardant cellulosic materials

    Science.gov (United States)

    Totolin, Vladimir

    The natural fiber-containing fabrics and composites are more environmentally friendly, and are used in transportation (automobiles, aerospace), military applications, construction industries (ceiling paneling, partition boards), consumer products, etc. Therefore, the flammability characteristics of the composites based on polymers and natural fibers play an important role. This dissertation presents the development of plasma assisted - green flame retardant coatings for cellulosic substrates. The overall objective of this work was to generate durable flame retardant treatment on cellulosic materials. In the first approach sodium silicate layers were pre-deposited onto clean cotton substrates and cross linked using low pressure, non-equilibrium oxygen plasma. A statistical design of experiments was used to optimize the plasma parameters. The modified cotton samples were tested for flammability using an automatic 45° angle flammability test chamber. Aging tests were conducted to evaluate the coating resistance during the accelerated laundry technique. The samples revealed a high flame retardant behavior and good thermal stability proved by thermo-gravimetric analysis. In the second approach flame retardant cellulosic materials have been produced using a silicon dioxide (SiO2) network coating. SiO 2 network armor was prepared through hydrolysis and condensation of the precursor tetraethyl orthosilicate (TEOS), prior coating the substrates, and was cross linked on the surface of the substrates using atmospheric pressure plasma (APP) technique. Due to protection effects of the SiO2 network armor, the cellulosic based fibers exhibit enhanced thermal properties and improved flame retardancy. In the third approach, the TEOS/APP treatments were extended to linen fabrics. The thermal analysis showed a higher char content and a strong endothermic process of the treated samples compared with control ones, indicating a good thermal stability. Also, the surface analysis proved

  4. CVD diamond detectors and dosimeters

    International Nuclear Information System (INIS)

    Manfredotti, C.; Fizzotti, F.; LoGiudice, A.; Paolini, C.; Oliviero, P.; Vittone, E.; Torino Univ., Torino

    2002-01-01

    Natural diamond, because of its well-known properties of tissue-equivalence, has recorded a wide spreading use in radiotherapy planning with electron linear accelerators. Artificial diamond dosimeters, as obtained by Chemical Vapour Deposition (CVD) could be capable to offer the same performances and they can be prepared in different volumes and shapes. The dosimeter sensitivity per unit volume may be easily proved to be better than standard ionization microchamber. We have prepared in our laboratory CVD diamond microchamber (diamond tips) in emispherical shape with an external diameter of 200 μm, which can be used both as X-ray beam profilometers and as microdosimeters for small field applications like stereotaxy and also for in vivo applications. These dosimeters, which are obtained on a wire substrate that could be either metallic or SiC or even graphite, display good performances also as ion or synchrotron X-rays detectors

  5. The optical properties of TeO2-Based Glasses

    International Nuclear Information System (INIS)

    Sahar, M.R.; Isahak, R.

    1994-01-01

    A series of binary glasses based on TeO2-PbCl2 has been prepared and their spectroscopy in the UV-Visible and IR regions has been investigated. It was found that the IR cut-off edge can go beyond 7μm and are largely influenced by the absorption due to Te-O-Te stretching vibrations around 638-644 cmsup -1 peaks

  6. The optical properties of TeO2-Based Glasses

    Energy Technology Data Exchange (ETDEWEB)

    Sahar, M R; Isahak, R [University Technology of Malaysia, Skudai Johor (Malaysia)

    1994-03-01

    A series of binary glasses based on TeO2-PbCl2 has been prepared and their spectroscopy in the UV-Visible and IR regions has been investigated. It was found that the IR cut-off edge can go beyond 7{mu}m and are largely influenced by the absorption due to Te-O-Te stretching vibrations around 638-644 cmsup -1 peaks.

  7. Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Sharma, Uttam; Chauhan, Sachin S; Sharma, Jayshree; Sanyasi, A K; Ghosh, J; Choudhary, K K; Ghosh, S K

    2016-01-01

    The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m 2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS. (paper)

  8. Linear antenna microwave plasma CVD diamond deposition at the edge of no-growth region of C-H-O ternary diagram

    Czech Academy of Sciences Publication Activity Database

    Potocký, Štěpán; Babchenko, Oleg; Hruška, Karel; Kromka, Alexander

    2012-01-01

    Roč. 249, č. 12 (2012), s. 2612-2615 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GAP205/12/0908 Institutional research plan: CEZ:AV0Z10100521 Keywords : C-H-O phase diagram * nanocrystalline diamond * plasma enhanced CVD * Raman spectroscopy * SEM Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.489, year: 2012

  9. Delaminated Transfer of CVD Graphene

    Science.gov (United States)

    Clavijo, Alexis; Mao, Jinhai; Tilak, Nikhil; Altvater, Michael; Andrei, Eva

    Single layer graphene is commonly synthesized by dissociation of a carbonaceous gas at high temperatures in the presence of a metallic catalyst in a process known as Chemical Vapor Deposition or CVD. Although it is possible to achieve high quality graphene by CVD, the standard transfer technique of etching away the metallic catalyst is wasteful and jeopardizes the quality of the graphene film by contamination from etchants. Thus, development of a clean transfer technique and preservation of the parent substrate remain prominent hurdles to overcome. In this study, we employ a copper pretreatment technique and optimized parameters for growth of high quality single layer graphene at atmospheric pressure. We address the transfer challenge by utilizing the adhesive properties between a polymer film and graphene to achieve etchant-free transfer of graphene films from a copper substrate. Based on this concept we developed a technique for dry delamination and transferring of graphene to hexagonal boron nitride substrates, which produced high quality graphene films while at the same time preserving the integrity of the copper catalyst for reuse. DOE-FG02-99ER45742, Ronald E. McNair Postbaccalaureate Achievement Program.

  10. Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Osmond, Johann; Isella, Giovanni; Chrastina, Daniel; Kaufmann, Rolf; Kaenel, Hans von

    2008-01-01

    We have fabricated a series of p-i-n Ge/Si heterojunction photodetectors with different thicknesses of the intrinsic Ge layer, different doping levels of the p and n layers and different diode diameters. Epitaxial Ge was deposited on Si(100) using low-energy plasma-enhanced CVD (LEPECVD) followed by cyclic annealing. Dark current values as low as 0.04 mA/cm 2 were achieved for 1 μm thick p-i-n photodiodes on lightly doped substrates at - 1 V bias, and external quantum efficiencies of 56% at 1.30 μm and 44% at 1.55 μm for 3 μm thick p + -i-n + photodiodes on highly doped substrates under 0.5 V reverse bias. For a 30 μm diameter diode a RC frequency of 21 GHz is obtained at a reverse bias of 1 V. With such characteristics, these diodes are attractive for telecommunication and optoelectronic applications

  11. Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

    NARCIS (Netherlands)

    Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

    2008-01-01

    Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

  12. CVD diamond windows for infrared synchrotron applications

    International Nuclear Information System (INIS)

    Sussmann, R.S.; Pickles, C.S.J.; Brandon, J.R.; Wort, C.J.H.; Coe, S.E.; Wasenczuk, A.; Dodge, C.N.; Beale, A.C.; Krehan, A.J.; Dore, P.; Nucara, A.; Calvani, P.

    1998-01-01

    This paper describes the attributes that make diamond a unique material for infrared synchrotron beam experiments. New developments in diamond synthesised by Chemical Vapour Deposition (CVD) promise to extend the range of applications which have been hitherto limited by the availability and cost of large-size single-crystal diamond. Polycrystalline CVD diamond components such as large (100 mm) diameter windows with extremely good transparency over a wide spectral range are now commercially available. Properties of CVD diamond of relevance to optical applications, such as mechanical strength, thermal conductivity and absolute bulk absorption, are discussed. It is shown that although some of the properties of CVD diamond (similar to other polycrystalline industrial ceramics) are affected by the grain structure, currently produced CVD diamond optical components have the quality and performance required for numerous demanding applications

  13. Structure of glasses of the TeO2-MoO3 system

    International Nuclear Information System (INIS)

    Dimitriev, Y.; Dimitrov, V.; Bart, J.C.J.

    1981-01-01

    Structural models for glasses of the TeO 2 -MoO 3 system are suggested. On the basis of X-ray and infrared spectral investigations, by comparing with known crystalline structures of TeO 2 , MoO 3 and Te 2 MoO 7 9t 2 M, it is shown that the glasses from TeO 2 to Te 2 MoO 7 possess [TeO 4 ] and [MoO 5 ] groups as basic structural units. The latter are connected to form [Mo 2 O 8 ] complexes. The glasses in the MoO 3 -rich compositional range are built up of [TeO 3 ] and [MoO 6 ] polyhedra. The glass-formation tendency is discussed in relation to the role of the free electron pair and the disruption of secondary and weak primary bonds in the crystals. (author)

  14. CVD diamond for nuclear detection applications

    CERN Document Server

    Bergonzo, P; Tromson, D; Mer, C; Guizard, B; Marshall, R D; Foulon, F

    2002-01-01

    Chemically vapour deposited (CVD) diamond is a remarkable material for the fabrication of radiation detectors. In fact, there exist several applications where other standard semiconductor detectors do not fulfil the specific requirements imposed by corrosive, hot and/or high radiation dose environments. The improvement of the electronic properties of CVD diamond has been under intensive investigations and led to the development of a few applications that are addressing specific industrial needs. Here, we report on CVD diamond-based detector developments and we describe how this material, even though of a polycrystalline nature, is readily of great interest for applications in the nuclear industry as well as for physics experiments. Improvements in the material synthesis as well as on device fabrication especially concern the synthesis of films that do not exhibit space charge build up effects which are often encountered in CVD diamond materials and that are highly detrimental for detection devices. On a pre-i...

  15. Surface coatings deposited by CVD and PVD

    International Nuclear Information System (INIS)

    Gabriel, H.M.

    1982-01-01

    The demand for wear and corrosion protective coatings is increasing due to economic facts. Deposition processes in gas atmospheres like the CVD and PVD processes attained a tremendous importance especially in the field of the deposition of thin hard refractory and ceramic coatings. CVD and PVD processes are reviewed in detail. Some examples of coating installations are shown and numerous applications are given to demonstrate the present state of the art. (orig.) [de

  16. CVD diamond for nuclear detection applications

    International Nuclear Information System (INIS)

    Bergonzo, P.; Brambilla, A.; Tromson, D.; Mer, C.; Guizard, B.; Marshall, R.D.; Foulon, F.

    2002-01-01

    Chemically vapour deposited (CVD) diamond is a remarkable material for the fabrication of radiation detectors. In fact, there exist several applications where other standard semiconductor detectors do not fulfil the specific requirements imposed by corrosive, hot and/or high radiation dose environments. The improvement of the electronic properties of CVD diamond has been under intensive investigations and led to the development of a few applications that are addressing specific industrial needs. Here, we report on CVD diamond-based detector developments and we describe how this material, even though of a polycrystalline nature, is readily of great interest for applications in the nuclear industry as well as for physics experiments. Improvements in the material synthesis as well as on device fabrication especially concern the synthesis of films that do not exhibit space charge build up effects which are often encountered in CVD diamond materials and that are highly detrimental for detection devices. On a pre-industrial basis, CVD diamond detectors have been fabricated for nuclear industry applications in hostile environments. Such devices can operate in harsh environments and overcome limitations encountered with the standard semiconductor materials. Of these, this paper presents devices for the monitoring of the alpha activity in corrosive nuclear waste solutions, such as those encountered in nuclear fuel assembly reprocessing facilities, as well as diamond-based thermal neutron detectors exhibiting a high neutron to gamma selectivity. All these demonstrate the effectiveness of a demanding industrial need that relies on the remarkable resilience of CVD diamond

  17. Fermented dairy food and CVD risk.

    Science.gov (United States)

    Tapsell, Linda C

    2015-04-01

    Fermented dairy foods such as yoghurt and cheese are commonly found in the Mediterranean diet. Recent landmark research has confirmed the effect of the Mediterranean diet on reducing the CVD risk, but the relative contributions of fermented dairy foods have not been fully articulated. The present study provides a review of the relationship between fermented dairy foods consumption and CVD risk in the context of the whole diet. Studies show that people who eat healthier diets may be more likely to consume yoghurt, so there is a challenge in attributing separate effects to yoghurt. Analyses from large population studies list yoghurt as the food most negatively associated with the risk of weight gain (a problem that may lead to CVD). There is some suggestion that fermented dairy foods consumption (yoghurt or cheese) may be associated with reduced inflammatory biomarkers associated with the development of CVD. Dietary trials suggest that cheese may not have the same effect on raising LDL-cholesterol levels as butter with the same saturated fat content. The same might be stated for yoghurt. The use of different probiotic cultures and other aspects of study design remain a problem for research. Nevertheless, population studies from a range of countries have shown that a reduced risk of CVD occurs with the consumption of fermented dairy foods. A combination of evidence is necessary, and more research is always valuable, but indications remain that fermented dairy foods such as cheese and yoghurt are integral to diets that are protective against CVD.

  18. Võitlus kaevandustega tõi Enno Vinnile aasta rohelise teo tegija tiitli / Külli Kriis

    Index Scriptorium Estoniae

    Kriis, Külli, 1961-

    2006-01-01

    Vt. ka Severnoje Poberezhje 12. dets. Eesti keskkonnaühendused kuulutasid aasta positiivseima keskkonnateo tegijaks Maidla vallavolikogu esimehe Enno Vinni. Haridusminister Mailis Repsile omistati keskkonnavaenulikuma teo ehk karuteene tiitel

  19. Teadus- ja erialaraamatukogudel oma päev ja aasta teo auhind / Kristina Rallmann

    Index Scriptorium Estoniae

    Rallmann, Kristina

    2008-01-01

    Esimene teadus- ja erialaraamatukogude päev toimus 22. oktoobril 2008 Tallinna majanduskoolis, teadusraamatukogu aasta teo auhind läks RR-i virtuaaalnäitusele "Meie parlament ja aeg: fakte, sündmusi, dokumente, inimesi" ning erialaraamatukogu aasta teo auhind Eesti Pimedate Raamatukogu töörühmale heliteavikute CD-plaatidele automatiseeritud paljundamise ja posti teel laenutamise süsteemi eest

  20. Post-Irradiation Behaviour of I131 in TeO2

    International Nuclear Information System (INIS)

    Jaćimović, Lj.; Stevović, J.; Veljković, S.R.

    1965-01-01

    The system I 131 in TeO 2 is interesting because little is known about thermal chemical changes in this target. Radioiodine was produced by neutron irradiation of TeO 2 in the reactor. Irradiated TeO 2 was dissolved in diluted NaOH. The analysis of the iodine valency forms was made by ion exchange techniques. The thermal and radiation stability of TeO 2 was studied by using the spectrophotometric method for the determination of tellurium. Post-irradiation annealing of I 131 in TeO 2 was studied in dependence on the time and temperature of the heating. The main tendency of annealing was the reduction of radioiodine. The time dependence of this process indicates a fast change at high temperatures. The curves are more complex at lower temperatures. The annealing may appear complex because of the variety of thermal reactions of iodine intermediary. It may react with products of the following processes: tellurium recoil and corresponding hot zone, beta transition of Te 131 and TeO 2 itself. The kinetics of these changes was considered and an estimation of the processes during annealing was made. The influence of the neutron flux on the kinetics of annealing was also studied. (author) [fr

  1. MgO by injection CVD

    International Nuclear Information System (INIS)

    Abrutis, A.; Kubilius, V.; Teiserkis, A.; Bigelyte, V.; Vengalis, B.; Jukna, A.; Butkute, R.

    1997-01-01

    Epitaxial YBa 2 Cu 3 O 7 layers with 45 in-plane orientation have been grown by injection CVD on MgO substrates polished off-axis to within 1.4-1.9 of the [100] direction. This new single-source CVD process is based on computer-controlled injection of precise microdoses of a metal-organic precursor solution into a CVD reactor. A wide range of solution compositions was tested to investigate compositional effects on phase purity, surface morphology, texturing and superconducting properties of the prepared films. The highest quality films with pure 45 texture had a smooth surface, zero resistance T c (R=0) of 88-89 K, and critical current density J c (77 K) above 10 6 A/cm 2 . (orig.) and critical current density J c (77 K) above 10 6 A/cm 2 . (orig.)

  2. CVD mechanism of pyrolytic boron nitride

    International Nuclear Information System (INIS)

    Tanji, H.; Monden, K.; Ide, M.

    1987-01-01

    Pyrolytic boron nitride (P-BN) has become a essential material for III-V compound semiconductor manufacturing process. As the demand from electronics industry for larger single crystals increases, the demand for larger and more economical P-BN components is growing rapidly. P-BN is manufactured by low pressure CVD using boron-trihalides and ammonia as the reactants. In spite that P-BN has been in the market for quite a long time, limited number of fundamental studies regarding the kinetics and the formation mechanism of P-BN have been reported. As it has been demonstrated in CVD of Si, knowledge and both theoretical and empirical modeling of CVD process can be applied to improve the deposition technology and to give more uniform deposition with higher efficiency, and it should also apply to the deposition of P-BN

  3. CVD tungsten metallization and electron beam lithography for fabricating submicron interconnects for advanced ULSI

    International Nuclear Information System (INIS)

    Wilson, S.R.; Mattox, R.J.

    1988-01-01

    CVD W (0.45μm thick) and CVD W (0.25μm thick) strapped by Al (0.5μm thick) have been used as metal 1 systems. Electrical and physical data are presented from experiments exploring the effects of processing issues with both e-beam and stepper lithography as well as dry etch chemistry on both metal systems. The special issues encountered with the thick tungsten processing were: (i) Significant e-beam proximity related problems as compared to the sandwich metal layers. The resultant e-beam proximity problem contributed to a high level of metal bridging and poor CD control. (ii) Multiple etch related problems due to mask failure and a lack of etch selectivity. The multilevel masks utilized, consisting of photoresist and plasma enhanced oxide (PEO), failed due to the poor etch selectivity. Poor etch selectivity with respect to the underlying oxide was also observed. These issues were addressed with thicker organic and PEO mask layers as well as changes in etch chemistry. These thick layers were successful in preventing the loss of the mask during etch., but caused problems in the e-beam CD control and did not prevent the degradation of the underlying glass. A higher selectivity etch was developed which greatly reduced the underlying dielectric damage and also allowed the use of the thinner organic and PEO hardmask layers without mask failure

  4. Patterned deposition by atmospheric pressure plasma-enhanced spatial atomic layer deposition

    NARCIS (Netherlands)

    Poodt, P.; Kniknie, B.J.; Branca, A.; Winands, G.J.J.; Roozeboom, F.

    2011-01-01

    An atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma. This technique can be used for 2D patterned deposition in a single in-line process by making use of switched localized plasma sources. It

  5. Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

    KAUST Repository

    Zhao, Chao; Hedhili, Mohamed N.; Li, Jingqi; Wang, Qingxiao; Yang, Yang; Chen, Long; LI, LIANG

    2013-01-01

    The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing

  6. Plasma-enhanced chemical vapor deposition of aluminum oxide using ultrashort precursor injection pulses

    NARCIS (Netherlands)

    Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the

  7. Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

    1999-01-01

    Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

  8. Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

    NARCIS (Netherlands)

    O'Donoghue, R.; Rechmann, J.; Aghaee, M.; Rogalla, D.; Becker, H.-W.; Creatore, M.; Wieck, A.D.; Devi, A.P.K.

    2017-01-01

    Herein we describe an efficient low temperature (60–160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The use of O2 plasma was found to have a significant

  9. Plasma enhanced atomic layer deposited MoOx emitters for silicon heterojunction solar cells

    OpenAIRE

    Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrsporn, R.B

    2015-01-01

    A method for the deposition of molybdenum oxide MoOx with high growth rates at temperatures below 200 C based on plasma enhanced atomic layer deposition is presented. The stoichiometry of the overstoichiometric MoOx films can be adjusted by the plasma parameters. First results of these layers acting as hole selective contacts in silicon heterojunction solar cells are presented and discussed

  10. Recent results on CVD diamond radiation sensors

    Science.gov (United States)

    Weilhammer, P.; Adam, W.; Bauer, C.; Berdermann, E.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; v. d. Eijk, R.; van Eijk, B.; Fallou, A.; Fish, D.; Fried, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knopfle, K. T.; Krammer, M.; Manfredi, P. F.; Meier, D.; LeNormand; Pan, L. S.; Pernegger, H.; Pernicka, M.; Plano, R.; Re, V.; Riester, J. L.; Roe, S.; Roff; Rudge, A.; Schieber, M.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; RD 42 Collaboration

    1998-02-01

    CVD diamond radiation sensors are being developed for possible use in trackers in the LHC experiments. The diamond promises to be radiation hard well beyond particle fluences that can be tolerated by Si sensors. Recent results from the RD 42 collaboration on charge collection distance and on radiation hardness of CVD diamond samples will be reported. Measurements with diamond tracking devices, both strip detectors and pixel detectors, will be discussed. Results from beam tests using a diamond strip detector which was read out with fast, 25 ns shaping time, radiation-hard pipeline electronics will be presented.

  11. CoFe2O4 nanoparticles as a catalyst: synthesis of a forest of vertically aligned CNTs of uniform diameters by plasma-enhanced CVD

    International Nuclear Information System (INIS)

    Baliyan, Ankur; Fukuda, Takahiro; Hayasaki, Yasuhiro; Uchida, Takashi; Nakajima, Yoshikata; Hanajiri, Tatsuro; Maekawa, Toru

    2013-01-01

    Controlling actively the structures of carbon nanotubes such as the alignment, length, diameter, chirality and the number of walls still remains a crucial challenge. The properties of CNTs are highly structure sensitive and particularly dependent on the diameter and number of walls. In this brief communication, we synthesise monodisperse CoFe 2 O 4 nanoparticles of uniform diameters, i.e. 4.8 and 6.9 nm, which are modified with oleic acid as a catalyst for the growth of CNTs. We show that a forest of vertically aligned CNTs of uniform diameters and lengths can be grown using CoFe 2 O 4 nanoparticles. The internal diameters and lengths of CNTs grown using CoFe 2 O 4 nanoparticles of 4.8 and 6.9 nm diameters are, respectively, 4.4 and 6.2 nm and 10 and 15 μm. It is clearly shown that the number of walls of CNTs can be engineered changing the materials of the catalytic nanoparticles. The present results may well encourage further systematic studies on the growth of CNTs using various combinations of elements for the catalytic nanoparticles under different external conditions, which may provide not only the possibilities of controlling the properties of CNTs but also an insight into the nucleation and growth mechanisms.

  12. Low temperature CVD deposition of silicon carbide

    International Nuclear Information System (INIS)

    Dariel, M.; Yeheskel, J.; Agam, S.; Edelstein, D.; Lebovits, O.; Ron, Y.

    1991-04-01

    The coating of graphite on silicon carbide from the gaseous phase in a hot-well, open flow reactor at 1150degC is described. This study constitutes the first part of an investigation of the process for the coating of nuclear fuel by chemical vapor deposition (CVD)

  13. CVD diamond pixel detectors for LHC experiments

    CERN Document Server

    Wedenig, R; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Wagner, A; Walsh, A M; Weilhammer, Peter; White, C; Zeuner, W; Ziock, H J; Zöller, M

    1999-01-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described. (9 refs).

  14. CVD diamond pixel detectors for LHC experiments

    Energy Technology Data Exchange (ETDEWEB)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N

    1999-08-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

  15. CVD diamond pixel detectors for LHC experiments

    International Nuclear Information System (INIS)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.

    1999-01-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described

  16. Turbostratic stacked CVD graphene for high-performance devices

    Science.gov (United States)

    Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

    2018-03-01

    We have fabricated turbostratic stacked graphene with high-transport properties by the repeated transfer of CVD monolayer graphene. The turbostratic stacked CVD graphene exhibited higher carrier mobility and conductivity than CVD monolayer graphene. The electron mobility for the three-layer turbostratic stacked CVD graphene surpassed 10,000 cm2 V-1 s-1 at room temperature, which is five times greater than that for CVD monolayer graphene. The results indicate that the high performance is derived from maintenance of the linear band dispersion, suppression of the carrier scattering, and parallel conduction. Therefore, turbostratic stacked CVD graphene is a superior material for high-performance devices.

  17. Design and construction of a prototype to obtain TeO2

    International Nuclear Information System (INIS)

    Roque H, I.

    1997-01-01

    At the National Institute of Nuclear Research is developed the process to produce the radioisotope Iodine 131 which is employed in medicine with therapeutical purposes. The raw material to produce iodine 131 is tellurium dioxide (TeO 2 ). TeO 2 is intended to be produced from a prototype being this aim of this thesis named D esign and construction of a prototype to obtain TeO 2 . The TeO 2 obtained must have specific physicochemical characteristics, being necessary an special design of a prototype which will guarantee the quality of tellurium dioxide obtention. Design and building the final prototype project, was developed in to three stages. At the first stage, the TeO 2 was obtained at the laboratory, this allows to know the basic reaction characteristics. The second stage purpose, was to work with an former prototype which allowed to produce 100 g of tellurium dioxide. In the last stage a depurated chemical process parameters was made and the prototype was refined in regard to its mechanical design, giving us as result the final prototype. With this final prototype, the production reaches 2 Kg/week of tellurium dioxide with the best physicochemical properties which is to be employed as raw material in order to produce iodine 131. (Author)

  18. Fabrication of Nd:YAG transparent ceramics with both TEOS and MgO additives

    International Nuclear Information System (INIS)

    Yang Hao; Qin Xianpeng; Zhang Jian; Wang Shiwei; Ma Jan; Wang Lixi; Zhang Qitu

    2011-01-01

    Research highlights: → It is well known that the use of TEOS as sintering aid is required to reach fully dense and transparent Nd:YAG ceramics. However, it is difficult to produce high quality transparent Nd:YAG ceramics only using TEOS as sintering aid. In this present work, high quality transparent Nd:YAG ceramic was fabricated using both TEOS and MgO as sintering aids. There have been few reports that both TEOS and MgO were co-added as sintering aids in YAG or Nd:YAG transparent ceramics to date. The transmittance of Nd:YAG ceramic is 83.8% at 1064 nm. The effect of MgO on the optical properties of transparent ceramics was also studied. - Abstract: Neodymium doped YAG transparent ceramics were fabricated by vacuum reactive sintering method using commercial α-Al 2 O 3 , Y 2 O 3 and Nd 2 O 3 powders as the starting materials with both tetraethyl orthosilicate (TEOS) and MgO as sintering aids. The morphologies and microstructure of the powders and Nd:YAG transparent ceramics were investigated. Fully dense Nd:YAG ceramics with average grain size of ∼10 μm were obtained by vacuum sintering at 1780 deg. C for 8 h. No pores and grain-boundary phases were observed. The in-line transmittance of the ceramic was 83.8% at 1064 nm.

  19. A study of the performance and properties of diamond like carbon (DLC) coatings deposited by plasma chemical vapor deposition (CVD) for two stroke engine components

    Energy Technology Data Exchange (ETDEWEB)

    Tither, D. [BEP Grinding Ltd., Manchester (United Kingdom); Ahmed, W.; Sarwar, M.; Penlington, R. [Univ. of Northumbria, Newcastle-upon-Tyne (United Kingdom)

    1995-12-31

    Chemical vapor deposition (CVD) using microwave and RF plasma is arguably the most successful technique for depositing diamond and diamond like carbon (DLC) films for various engineering applications. However, the difficulties of depositing diamond are nearly as extreme as it`s unique combination of physical, chemical and electrical properties. In this paper, the modified low temperature plasma enhanced CVD system is described. The main focus of this paper will be work related to deposition of DLC on metal matrix composite materials (MMCs) for application in two-stroke engine components and results will be presented from SEM, mechanical testing and composition analysis studies. The authors have demonstrated the feasibility of depositing DLC on MMCs for the first time using a vacuum deposition process.

  20. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi......We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source...... effect of single-layer coatings deposited under different reaction conditions was studied. The coating thickness and the carbon content in the coatings were found to be the critical parameters for the barrier property. The novel barrier coating was applied on different polymeric materials...

  1. Achieving uniform layer deposition by atmospheric-pressure plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Ok [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Kang, Woo Seok, E-mail: kang@kimm.re.kr [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of); Hur, Min; Lee, Jin Young [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Song, Young-Hoon [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of)

    2015-12-31

    This work investigates the use of plasma-enhanced chemical vapor deposition under atmospheric pressure for achieving uniform layer formation. Electrical and optical measurements demonstrated that the counterbalance between oxygen and precursors maintained the homogeneous discharge mode, while creating intermediate species for layer deposition. Several steps of the deposition process of the layers, which were processed on a stationary stage, were affected by flow stream and precursor depletion. This study showed that by changing the flow streamlines using substrate stage motion uniform layer deposition under atmospheric pressure can be achieved. - Highlights: • Zirconium oxide was deposited by atmospheric-pressure plasma-enhanced chemical vapor deposition. • Homogeneous plasma was maintained by counterbalancing between discharge gas and precursors. • Several deposition steps were observed affected by the gas flow stream and precursor depletion. • Thin film layer was uniformly grown when the substrate underwent a sweeping motion.

  2. Structure of TeO2 - LiNbO3 glasses

    Science.gov (United States)

    Shinde, A. B.; Krishna, P. S. R.; Rao, Rekha

    2017-05-01

    Tellurite based lithium niobate glasses with composition (100-x)TeO2-xLiNbO3 (x=0.1,0.2 & 0.3) were prepared by conventional melt quenching method. The microscopic structural investigation of these glasses is carried out by means of neutron diffraction and Raman scattering measurements. It is found that the basic structural units in these glasses are TeO4 trigonal bipyramids(TBP), TeO3 trigonal pyramids(TP) and NbO6 Octahedra depending on the composition. It is evident from Raman studies that TBPs decreases, TPs increases and NbO6 Octahedra increases with increasing x. From Neutron diffraction studies it is found that network is comprised of TBPs and TPs along with TeO3+1 structural units. Distorted NbO6 octahedral units are present and also increase with the increase in x.

  3. Background suppression in TeO2 bolometers with Neganov-Luke amplified cryogenic light detectors

    International Nuclear Information System (INIS)

    Willers, Michael

    2015-01-01

    Cryogenic detectors based on non-scintillating TeO 2 crystals are used in the search for the neutrinoless double beta decay, presently one of the most important fields of research in neutrino and astroparticle physics. Within this work, the application of Neganov-Luke amplified cryogenic light detectors for the background suppression in TeO 2 crystals is investigated. Alpha-induced background events can be discriminated from signal-like electron/gamma events via the detection of Cherenkov radiation produced by highly energetic electrons within the TeO 2 crystal. Using Neganov-Luke light detectors, it could be shown for the first time that a highly efficient event-by-event discrimination between alpha and electron/gamma-induced events can be achieved.

  4. Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide

    International Nuclear Information System (INIS)

    Lehnert, Wolfgang; Ruhl, Guenther; Gschwandtner, Alexander

    2012-01-01

    Among many promising high-k dielectrics, TiO 2 is an interesting candidate because of its relatively high k value of over 40 and its easy integration into existing semiconductor manufacturing schemes. The most critical issues of TiO 2 are its low electrical stability and its high leakage current density. However, doping TiO 2 with Al has shown to yield significant improvement of layer quality on Ru electrodes [S. K. Kim et al., Adv. Mater. 20, 1429 (2008)]. In this work we investigated if atomic layer deposition (ALD) of Al doped TiO 2 is feasible in a batch system. Electrical characterizations were done using common electrode materials like TiN, TaN, or W. Additionally, the effect of plasma enhanced processing in this reactor was studied. For this investigation a production batch ALD furnace has been retrofitted with a plasma source which can be used for post deposition anneals with oxygen radicals as well as for directly plasma enhanced ALD. After evaluation of several Ti precursors a deposition process for AlTiO x with excellent film thickness and composition uniformity was developed. The effects of post deposition anneals, Al 2 O 3 interlayers between electrode and TiO 2 , Al doping concentration, plasma enhanced deposition and electrode material type on leakage current density are shown. An optimized AlTiO x deposition process on TaN electrodes yields to leakage current density of 5 x 10 -7 A/cm 2 at 2 V and k values of about 35. Thus, it could be demonstrated that a plasma enhanced batch ALD process for Al doped TiO 2 is feasible with acceptable leakage current density on a standard electrode material.

  5. Experimental setup for producing tungsten coated graphite tiles using plasma enhanced chemical vapor deposition technique for fusion plasma applications

    International Nuclear Information System (INIS)

    Chauhan, Sachin Singh; Sharma, Uttam; Choudhary, K.K.; Sanyasi, A.K.; Ghosh, J.; Sharma, Jayshree

    2013-01-01

    Plasma wall interaction (PWI) in fusion grade machines puts stringent demands on the choice of materials in terms of high heat load handling capabilities and low sputtering yields. Choice of suitable material still remains a challenge and open topic of research for the PWI community. Carbon fibre composites (CFC), Beryllium (Be), and Tungsten (W) are now being considered as first runners for the first wall components of future fusion machines. Tungsten is considered to be one of the suitable materials for the job because of its superior properties than carbon like low physical sputtering yield and high sputter energy threshold, high melting point, fairly high re-crystallization temperature, low fuel retention capabilities, low chemical sputtering with hydrogen and its isotopes and most importantly the reparability with various plasma techniques both ex-situ and in-situ. Plasma assisted chemical vapour deposition is considered among various techniques as the most preferable technique for fabricating tungsten coated graphite tiles to be used as tokamak first wall and target components. These coated tiles are more favourable compared to pure tungsten due to their light weight and easier machining. A system has been designed, fabricated and installed at SVITS, Indore for producing tungsten coated graphite tiles using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) technique for Fusion plasma applications. The system contains a vacuum chamber, a turbo-molecular pump, two electrodes, vacuum gauges, mass analyzer, mass flow controllers and a RF power supply for producing the plasma using hydrogen gas. The graphite tiles will be put on one of the electrodes and WF6 gas will be inserted in a controlled manner in the hydrogen plasma to achieve the tungsten-coating with WF6 dissociation. The system is integrated at SVITS, Indore and a vacuum of the order of 3*10 -6 is achieved and glow discharge plasma has been created to test all the sub-systems. The system design with

  6. New fabrication technique using side-wall-type plasma-enhanced chemical-vapor deposition for a floating gate memory with a Si nanodot

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, Kazunori; Punchaipetch, Prakaipetch; Yano, Hiroshi; Hatayama, Tomoaki; Uraoka, Yukiharu; Fuyuki, Takashi [Nara Institute of Science and Techonology, Ikoma, Nara (Japan); Tomyo, Atsushi; Takahashi, Eiji; Hayashi, Tsukasa; Ogata, Kiyoshi [Nissin Electric Co., Ltd., Kyoto (Japan)

    2006-08-15

    We have used side-wall-type plasma-enhanced chemical-vapor deposition (PECVD)to fabricate a floating gate memory using a Si nano-crystal dot on thermal SiO{sub 2} at a low temperature of 430 .deg. C. Atomic and radical hydrogen plays an important role in the low-temperature formation of the dot. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) analyses revealed that the average dot size and density were approximately 5 nm and 8.5 X 10{sup 11} cm{sup -2}, respectively. The electronic properties were investigated with metal-oxide-semiconductor-field-effect transistors (MOSFETs) by embedding the nanocrystal dots into SiO{sub 2} fabricated using CVD. Electron charging and discharging were clearly confirmed at room temperature by the transient behavior of the capacitance and the transfer curve. The number of electrons confined in a single dot was approximately one. Furthermore, we evaluated the electronic behavior by varying the bias condition or the operating temperature. The critical charge density could be confirmed to be independent of the injection condition.

  7. CVD calibration light systems specifications. Rev. 0

    International Nuclear Information System (INIS)

    Mcllwain, A. K.

    1992-04-01

    Two prototype Cerenkov Viewing Device Calibration Light systems for the Mark IV CVD have been fabricated. They consist of a maintenance unit that will be used by the IAEA maintenance staff and a field unit that will be used by IAEA inspectors. More detailed information on the design of the calibration units can be obtained from the document SSP-39 and additional information on the Mark IV CVD can be obtained from the operating manual published as Canadian Safeguards Support Program document CSSP 6. The specifications refer to the prototype units which will be demonstrated to the IAEA in 1992 May. Based upon the feedback from the IAEA, the instruments will be changed in the final production models to provide devices that more closely satisfy the needs of the end users

  8. Recent results with CVD diamond trackers

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Ziock, H.; Zoeller, M

    1999-08-01

    We present recent results on the use of Chemical Vapor Deposition (CVD) diamond microstrip detectors for charged particle tracking. A series of detectors was fabricated using 1 x 1 cm{sup 2} diamonds. Good signal-to-noise ratios were observed using both slow and fast readout electronics. For slow readout electronics, 2 {mu}s shaping time, the most probable signal-to-noise ratio was 50 to 1. For fast readout electronics, 25 ns peaking time, the most probable signal-to-noise ratio was 7 to 1. Using the first 2 x 4 cm{sup 2} diamond from a production CVD reactor with slow readout electronics, the most probable signal-to-noise ratio was 23 to 1. The spatial resolution achieved for the detectors was consistent with the digital resolution expected from the detector pitch.

  9. Recent results with CVD diamond trackers

    CERN Document Server

    Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

    1999-01-01

    We present recent results on the use of chemical vapor deposition (CVD) diamond microstrip detectors for charged particle tracking. A series of detectors was fabricated using 1*1 cm/sup 2/ diamonds. Good signal-to-noise ratios were observed using both slow and fast readout electronics. For slow readout electronics, 2 mu s shaping time, the most probable signal-to-noise ratio was 50 to 1. For fast readout electronics, 25 ns peaking time, the most probable signal-to-noise ratio was 7 to 1. Using the first 2*4 cm/sup 2/ diamond from a production CVD reactor with slow readout electronics, the most probable signal-to-noise ratio was 23 to 1. The spatial resolution achieved for the detectors was consistent with the digital resolution expected from the detector pitch. (6 refs).

  10. Ballistic Josephson junctions based on CVD graphene

    Science.gov (United States)

    Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

    2018-04-01

    Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

  11. Undoped CVD diamond films for electrochemical applications

    International Nuclear Information System (INIS)

    Mosinska, Lidia; Fabisiak, Kazimierz; Paprocki, Kazimierz; Kowalska, Magdalena; Popielarski, Pawel; Szybowicz, Miroslaw

    2013-01-01

    By using different deposition conditions, the CVD diamond films with different qualities and orientation were grown by the hot-filament CVD technique. The object of this article is to summarize and discuss relation between structural, physical and electrochemical properties of different diamond electrodes. The physical properties of the Hot Filament CVD microcrystalline diamond films are analyzed by scanning electron microscopy and Raman spectroscopy. In presented studies two different electrodes were used of the diamond grain sizes around 200 nm and 10 μm, as it was estimated from SEM picture. The diamond layers quality was checked on basis of FWHM (Full width at Half Maximum) of 1332 cm −1 diamond Raman peak. The ratio of sp 3 /sp 2 carbon bonds was determined by 1550 cm −1 G band and 1350 cm −1 D band in the Raman spectrum. The electrochemical properties were analyzed using (CV) cyclic voltammetry measurements in aqueous solutions. The sensitivity of undoped diamond electrodes depends strongly on diamond film quality and concentration of amorphous carbon phase in the diamond layer

  12. Growth and Characterization of Magnetoelectric Fe2TeO6 Thin Films

    Science.gov (United States)

    Wang, Junlei; Colon Santana, Juan; Wu, Ning; Dowben, Peter; Binek, Christian

    2013-03-01

    Voltage-controlled spintronics is of vital importance in information technology where power consumption and Joule heating restrict progress through scaling. Motivated by spintronic concepts and specifically by device applications utilizing electrically controlled interface or boundary magnetization (BM) in magnetic thin film heterostructures, we report on growth, structural, magnetic and magnetoelectric (ME) characterization of the antiferromagnet Fe2TeO6. Magnetometry of synthesized Fe2TeO6 powder, in combination with ME susceptibility data reveals 3D Heisenberg criticality in striking similarity to the archetypical ME chromia. X-ray diffraction shows (110) texture of the PLD grown films. Measurements of the magnetic susceptibility of the latter confirm in-plane magnetic anisotropy. X-ray photoemission spectroscopy indicates a Te-O terminated (110) surface. We interpret it in terms of surface reconstruction. Measurements of X-ray magnetic circular dichroism combined with photoemission electron microscopy support the presence of electrically controllable BM in the PLD-grown Fe2TeO6 thin film. We acknowledge financial support by NSF-MRSEC & Nanoelectronics Research Initiative.

  13. Molecular dynamics investigation of Na+ in Na2Ni2TeO6

    International Nuclear Information System (INIS)

    Sau, Kartik; Kumar, P. Padma

    2014-01-01

    An inter-atomic potential for Na 2 Ni 2 TeO 6 in the Parrinello- Rahman-Vashishta (PRV) model is parameterized empirically. The potential reproduces variety of structural and transport properties of that material in good agreement with recent experimental results. The study provides fresh insights on the migration channels and mechanism of Na + in the system

  14. Hydrophobic and low density silica aerogels dried at ambient pressure using TEOS precursor

    International Nuclear Information System (INIS)

    Gurav, Jyoti L.; Rao, A. Venkateswara; Bangi, Uzma K.H.

    2009-01-01

    In the conventional ambient pressure drying of silica aerogels, tedious repetitive gel washing and solvent exchange steps (∼6 days) are involved. Therefore, in the present studies, we intended to reduce the processing time of TEOS based ambient pressure dried silica aerogels. Solvents such as methanol, hexane and Hexamethyldisilazane (HMDZ) as surface chemical modification agents have been used. To get good quality aerogels in terms of low density, high porosity, high contact angle and low volume shrinkage in less processing time, we varied MeOH/TEOS, HMDZ/TEOS molar ratios, oxalic acid (A) and NH 4 OH (B) concentrations and stirring time from 1 to 27.7, 0.34 to 2.1, 0 to 0.1 M, 0 to 2 M and 15 to 90 min respectively. The transparent and low-density aerogels were obtained for TEOS:MeOH:acidic H 2 O:basic H 2 O:HMDZ molar ratio of 1:16.5:0.81:0.50:0.681 respectively. The thermal stability and hydrophobicity have been confirmed with Thermogravimetric and Differential Thermal (TG-DT) analyses and Fourier Transform Infrared Spectroscopy. Microstructural study was carried out by Scanning Electron Microscopy (SEM)

  15. Raman spectra of TeO2-PbCl2 glasses

    Czech Academy of Sciences Publication Activity Database

    Ležal, Dimitrij; Bludská, Jana; Horák, J.; Sklenář, A.; Karamazov, S.; Vlček, M.

    2002-01-01

    Roč. 43, č. 6 (2002), s. 296-299 ISSN 0031-9090 Institutional research plan: CEZ:AV0Z4032918 Keywords : tellurite glasses * TeO2glass * model Subject RIV: CA - Inorganic Chemistry Impact factor: 0.691, year: 2002

  16. Accurate polynomial expressions for the density and specific volume of seawater using the TEOS-10 standard

    Science.gov (United States)

    Roquet, F.; Madec, G.; McDougall, Trevor J.; Barker, Paul M.

    2015-06-01

    A new set of approximations to the standard TEOS-10 equation of state are presented. These follow a polynomial form, making it computationally efficient for use in numerical ocean models. Two versions are provided, the first being a fit of density for Boussinesq ocean models, and the second fitting specific volume which is more suitable for compressible models. Both versions are given as the sum of a vertical reference profile (6th-order polynomial) and an anomaly (52-term polynomial, cubic in pressure), with relative errors of ∼0.1% on the thermal expansion coefficients. A 75-term polynomial expression is also presented for computing specific volume, with a better accuracy than the existing TEOS-10 48-term rational approximation, especially regarding the sound speed, and it is suggested that this expression represents a valuable approximation of the TEOS-10 equation of state for hydrographic data analysis. In the last section, practical aspects about the implementation of TEOS-10 in ocean models are discussed.

  17. Treffneri hoone pälvis Tartu aasta teo tiitli / Priit Rajalo

    Index Scriptorium Estoniae

    Rajalo, Priit, 1975-

    2002-01-01

    Viiendat korda välja antud Tartu aasta teo konkursi aunimetuse pälvis tänavu Huga Treffneri gümnaasiumi renoveeritud hoone, sümboliseerides vajadust anda rohkem raha haridusele. Tartu linnapea Andrus Ansipi sõnul kuulub see hoone praegu Euroopa kümne parima gümnaasiumihoone hulka

  18. Role of plasma enhanced atomic layer deposition reactor wall conditions on radical and ion substrate fluxes

    Energy Technology Data Exchange (ETDEWEB)

    Sowa, Mark J., E-mail: msowa@ultratech.com [Ultratech/Cambridge NanoTech, 130 Turner Street, Building 2, Waltham, Massachusetts 02453 (United States)

    2014-01-15

    Chamber wall conditions, such as wall temperature and film deposits, have long been known to influence plasma source performance on thin film processing equipment. Plasma physical characteristics depend on conductive/insulating properties of chamber walls. Radical fluxes depend on plasma characteristics as well as wall recombination rates, which can be wall material and temperature dependent. Variations in substrate delivery of plasma generated species (radicals, ions, etc.) impact the resulting etch or deposition process resulting in process drift. Plasma enhanced atomic layer deposition is known to depend strongly on substrate radical flux, but film properties can be influenced by other plasma generated phenomena, such as ion bombardment. In this paper, the chamber wall conditions on a plasma enhanced atomic layer deposition process are investigated. The downstream oxygen radical and ion fluxes from an inductively coupled plasma source are indirectly monitored in temperature controlled (25–190 °C) stainless steel and quartz reactors over a range of oxygen flow rates. Etch rates of a photoresist coated quartz crystal microbalance are used to study the oxygen radical flux dependence on reactor characteristics. Plasma density estimates from Langmuir probe ion saturation current measurements are used to study the ion flux dependence on reactor characteristics. Reactor temperature was not found to impact radical and ion fluxes substantially. Radical and ion fluxes were higher for quartz walls compared to stainless steel walls over all oxygen flow rates considered. The radical flux to ion flux ratio is likely to be a critical parameter for the deposition of consistent film properties. Reactor wall material, gas flow rate/pressure, and distance from the plasma source all impact the radical to ion flux ratio. These results indicate maintaining chamber wall conditions will be important for delivering consistent results from plasma enhanced atomic layer deposition

  19. Control of ordered mesoporous titanium dioxide nanostructures formed using plasma enhanced glancing angle deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gibson, Des [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Child, David, E-mail: david.child@uws.ac.uk [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Song, Shigeng; Zhao, Chao [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Alajiani, Yahya [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Department of Physics, Faculty of Science, Jazan University, Jazan (Saudi Arabia); Waddell, Ewan [Thin Film Solutions Ltd, West of Scotland Science Park, Glasgow, G20 0TH (United Kingdom)

    2015-10-01

    Three dimensional nanostructures of mesoporous (pore diameter between 2-50 nm) nanocrystalline titania (TiO{sub 2}) were produced using glancing angle deposition combined with plasma ion assisted deposition, providing plasma enhanced glancing angle deposition eliminating the need for post-annealing to achieve film crystallinity. Electron beam evaporation was chosen to deposit nanostructures at various azimuthal angles, achieving designed variation in three dimensional nanostructure. A thermionic broad beam hollow cathode plasma source was used to enhance electron beam deposition, with ability to vary in real time ion fluxes and energies providing a means to modify and control TiO{sub 2} nanostructure real time with controlled density and porosity along and lateral to film growth direction. Plasma ion assisted deposition was carried out at room temperature using a hollow cathode plasma source, ensuring low heat loading to the substrate during deposition. Plasma enhanced glancing angle TiO{sub 2} structures were deposited onto borosilicate microscope slides and used to characterise the effects of glancing angle and plasma ion energy distribution function on the optical and nanostructural properties. Variation in TiO{sub 2} refractive index from 1.40 to 2.45 (@ 550 nm) using PEGLAD is demonstrated. Results and analysis of the influence of plasma enhanced glancing angle deposition on evaporant path and resultant glancing angle deviation from standard GLAD are described. Control of mesoporous morphology is described, providing a means of optimising light trapping features and film porosity, relevant to applications such as fabrication of dye sensitised solar cells. - Highlights: • Plasma assistance during glancing angle deposition enables control of morphology. • Ion energy variation during glancing angle deposition varies columnar angle • Column thickness of glancing angle deposition dependant on ion current density • Ion current density variation during

  20. An assessment of radiotherapy dosimeters based on CVD grown diamond

    International Nuclear Information System (INIS)

    Ramkumar, S.; Buttar, C.M.; Conway, J.; Whitehead, A.J.; Sussman, R.S.; Hill, G.; Walker, S.

    2001-01-01

    Diamond is potentially a very suitable material for use as a dosimeter for radiotherapy. Its radiation hardness, the near tissue equivalence and chemical inertness are some of the characteristics of diamond, which make it well suited for its application as a dosimeter. Recent advances in the synthesis of diamond by chemical vapour deposition (CVD) technology have resulted in the improvement in the quality of material and increased its suitability for radiotherapy applications. We report in this paper, the response of prototype dosimeters based on two different types (CVD1 and CVD2) of CVD diamond to X-rays. The diamond devices were assessed for sensitivity, dependence of response on dose and dose rate, and compared with a Scanditronix silicon photon diode and a PTW natural diamond dosimeter. The diamond devices of CVD1 type showed an initial increase in response with dose, which saturates after ∼6 Gy. The diamond devices of CVD2 type had a response at low fields ( 1162.8 V/cm), the CVD2-type devices showed polarisation and dose-rate dependence. The sensitivity of the CVD diamond devices varied between 82 and 1300 nC/Gy depending upon the sample type and the applied voltage. The sensitivity of CVD diamond devices was significantly higher than that of natural diamond and silicon dosimeters. The results suggest that CVD diamond devices can be fabricated for successful use in radiotherapy applications

  1. Quantum mechanical study of pre-dissociation enhancement of linear and nonlinear polarizabilities of (TeO2)(n) oligomers as a key to understanding the remarkable dielectric properties of TeO2 glasses.

    Science.gov (United States)

    Smirnov, Mikhail; Mirgorodsky, Andrei; Masson, Olivier; Thomas, Philippe

    2012-09-20

    The effects of intermolecular interactions of TeO(2) molecules in the (TeO(2))(n) oligomers on the polarizability (α) and second hyperpolarizability (γ) are investigated by the use of a density functional method. A significant intermolecular distance dependence of both quantities is observed. The huge dissociation-induced polarizability enhancement is analyzed in terms of the molecular orbital evolution. It is shown that the obtained results can provide a new look at the microscopic origin of the extraordinary dielectric properties of TeO(2) glass.

  2. Growth of highly oriented carbon nanotubes by plasma-enhanced hot filament chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Z.P.; Xu, J.W.; Ren, Z.F.; Wang, J.H. [Materials Synthesis Laboratory, Departments of Physics and Chemistry, and Center for Advanced Photonic and Electronic Materials (CAPEM), State University of New York at Buffalo, Buffalo, New York 14260 (United States); Siegal, M.P.; Provencio, P.N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States)

    1998-12-01

    Highly oriented, multiwalled carbon nanotubes were grown on polished polycrystalline and single crystal nickel substrates by plasma enhanced hot filament chemical vapor deposition at temperatures below 666 {degree}C. The carbon nanotubes range from 10 to 500 nm in diameter and 0.1 to 50 {mu}m in length depending on growth conditions. Acetylene is used as the carbon source for the growth of the carbon nanotubes and ammonia is used for dilution gas and catalysis. The plasma intensity, acetylene to ammonia gas ratio, and their flow rates, etc. affect the diameters and uniformity of the carbon nanotubes. {copyright} {ital 1998 American Institute of Physics.}

  3. Carbon nanosheets by microwave plasma enhanced chemical vapor deposition in CH4-Ar system

    International Nuclear Information System (INIS)

    Wang Zhipeng; Shoji, Mao; Ogata, Hironori

    2011-01-01

    We employ a new gas mixture of CH 4 -Ar to fabricate carbon nanosheets by microwave plasma enhanced chemical vapor deposition at the growth temperature of less than 500 deg. C. The catalyst-free nanosheets possess flower-like structures with a large amount of sharp edges, which consist of a few layers of graphene sheets according to the observation by transmission electron microscopy. These high-quality carbon nanosheets demonstrated a faster electron transfer between the electrolyte and the nanosheet surface, due to their edge defects and graphene structures.

  4. Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

    KAUST Repository

    Zhao, Chao

    2013-09-01

    The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing process of the films. The refractive index and bandgap of TiO2 films changed with the growth and annealing temperatures. The optimization of the annealing conditions for TiO2 films was also done by morphology and density studies. © 2013 Elsevier B.V. All rights reserved.

  5. Comparative evaluation of CVD diamond technologies

    Energy Technology Data Exchange (ETDEWEB)

    Anthony, T.R. [General Electric Corporate Research & Development Center, Schenectady, NY (United States)

    1993-01-01

    Chemical vapor deposition (CVD) of diamonds occurs from hydrogen-hydrocarbon gas mixtures in the presence of atomic hydrogen at subatmospheric pressures. Most CVD methods are based on different means of generating and transporting atomic hydrogen in a particular system. Evaluation of these different techniques involves their capital costs, material costs, energy costs, labor costs and the type and quality of diamond that they produce. Currently, there is no universal agreement on which is the best technique and technique selection has been largely driven by the professional background of the user as well as the particular application of interest. This article discusses the criteria for evaluating a process for low-pressure deposition of diamond. Next, a brief history of low-pressure diamond synthesis is reviewed. Several specific processes are addressed, including the hot filament process, hot filament electron-assisted chemical vapor deposition, and plasma generation of atomic hydrogen by glow discharge, microwave discharge, low pressure radio frequency discharge, high pressure DC discharge, high pressure microwave discharge jets, high pressure RF discharge, and high and low pressure flames. Other types of diamond deposition methods are also evaluated. 101 refs., 15 figs.

  6. Development of CVD diamond radiation detectors

    CERN Document Server

    Adam, W; Berdermann, E; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fisch, D; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Meier, D; Mishina, M; Le Normand, F; Pan, L S; Pernegger, H; Pernicka, Manfred; Pirollo, S; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zoeller, M M

    1998-01-01

    Diamond is a nearly ideal material for detecting ionizing radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow a diamond detector to be used in high ra diation, high temperature and in aggressive chemical media. We have constructed charged particle detectors using high quality CVD diamond. Characterization of the diamond samples and various detect ors are presented in terms of collection distance, $d=\\mu E \\tau$, the average distance electron-hole pairs move apart under the influence of an electric field, where $\\mu$ is the sum of carrier mo bilities, $E$ is the applied electric field, and $\\tau$ is the mobility weighted carrier lifetime. Over the last two years the collection distance increased from $\\sim$ 75 $\\mu$m to over 200 $\\mu$ m. With this high quality CVD diamond a series of micro-strip and pixel particle detectors have been constructed. These devices were tested to determine their position resolution and signal to n oise performance. Diamond detectors w...

  7. TSC response of irradiated CVD diamond films

    CERN Document Server

    Borchi, E; Bucciolini, M; Guasti, A; Mazzocchi, S; Pirollo, S; Sciortino, S

    1999-01-01

    CVD diamond films have been irradiated with electrons, sup 6 sup 0 Co photons and protons in order to study the dose response to exposure to different particles and energies and to investigate linearity with dose. The Thermally Stimulated Current (TSC) has been studied as a function of the dose delivered to polymethilmetacrilate (PMMA) in the range from 1 to 12 Gy with 20 MeV electrons from a linear accelerator. The TSC spectrum has revealed the presence of two components with peak temperatures of about 470 and 520 K, corresponding to levels lying in the diamond band gap with activation energies of the order of 0.7 - 1 eV. After the subtraction of the exponential background the charge emitted during the heating scan has been evaluated and has been found to depend linearly on the dose. The thermally emitted charge of the CVD diamond films has also been studied using different particles. The samples have been irradiated with the same PMMA dose of about 2 Gy with 6 and 20 MeV electrons from a Linac, sup 6 sup 0 ...

  8. High collection efficiency CVD diamond alpha detectors

    International Nuclear Information System (INIS)

    Bergonzo, P.; Foulon, F.; Marshall, R.D.; Jany, C.; Brambilla, A.; McKeag, R.D.; Jackman, R.B.

    1998-01-01

    Advances in Chemical Vapor Deposited (CVD) diamond have enabled the routine use of this material for sensor device fabrication, allowing exploitation of its unique combination of physical properties (low temperature susceptibility (> 500 C), high resistance to radiation damage (> 100 Mrad) and to corrosive media). A consequence of CVD diamond growth on silicon is the formation of polycrystalline films which has a profound influence on the physical and electronic properties with respect to those measured on monocrystalline diamond. The authors report the optimization of physical and geometrical device parameters for radiation detection in the counting mode. Sandwich and co-planar electrode geometries are tested and their performances evaluated with regard to the nature of the field profile and drift distances inherent in such devices. The carrier drift length before trapping was measured under alpha particles and values as high as 40% of the overall film thickness are reported. Further, by optimizing the device geometry, they show that a gain in collection efficiency, defined as the induced charge divided by the deposited charge within the material, can be achieved even though lower bias values are used

  9. Infrared Spectroscopy and Raman Scattering Studies on the Structure of Ag2O. B2O3. TeO2 Glass

    International Nuclear Information System (INIS)

    Thazin Myint; Soe Soe Thin; Pho Kaung; Sein Htoon

    2006-06-01

    Infrared spectroscopy investigation of silver - borate - tellurite glasses in the system 0.4 Ag2 O. 0.6 (x B2 O2. (1-x) TeO2) for various of x (0 < x < 1) has been performed in order to understand the glass modifying properties of the TeO2. In pure crystalline TeO2 spectra observed absorption bands at 780 cm-1 and 660 cm-1 have been ascribed to the stretching vibration of TeO bonds in the TeO4 units. In the glass 0.4 Ag2 O. 0.6 (x B2 O3. (1-x) TeO2) the bands at 700 cm-1 and 694 cm-1 are assigned to the symmetric breathing vibration of the boroxol group and the pentaborate one. The glasses show bands at 630 cm-1 which corresponds to the vibrations due to TeO4 units

  10. Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

    2014-04-01

    The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

  11. A CVD diamond beam telescope for charged particle tracking

    CERN Document Server

    Adam, W; Bergonzo, P; de Boer, Wim; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dulinski, W; Doroshenko, J; Doucet, M; van Eijk, B; Fallou, A; Fischer, P; Fizzotti, F; Kania, D R; Gan, K K; Grigoriev, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kaplon, J; Kass, R; Keil, M; Knöpfle, K T; Koeth, T W; Krammer, Manfred; Meuser, S; Lo Giudice, A; MacLynne, L; Manfredotti, C; Meier, D; Menichelli, D; Mishina, M; Moroni, L; Noomen, J; Oh, A; Pan, L S; Pernicka, Manfred; Perera, L P; Riester, J L; Roe, S; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Trischuk, W; Tromson, D; Vittone, E; Weilhammer, Peter; Wermes, N; Wetstein, M; Zeuner, W; Zöller, M

    2002-01-01

    CVD diamond is a radiation hard sensor material which may be used for charged particle tracking near the interaction region in experiments at high luminosity colliders. The goal of the work described here is to investigate the use of several detector planes made of CVD diamond strip sensors for charged particle tracking. Towards this end a tracking telescope composed entirely of CVD diamond planes has been constructed. The telescope was tested in muon beams and its tracking capability has been investigated.

  12. Experiment and equipment of depositing diamond films with CVD system

    International Nuclear Information System (INIS)

    Xie Erqing; Song Chang'an

    2002-01-01

    CVD (chemical vapor deposition) emerged in recent years is a new technique for thin film deposition, which play a key role in development of modern physics. It is important to predominate the principle and technology of CVD for studying modern physics. In this paper, a suit of CVD experimental equipment for teaching in college physics is presented, which has simple design and low cost. The good result was gained in past teaching practices

  13. New developments in CVD diamond for detector applications

    Science.gov (United States)

    Adam, W.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Furetta, C.; Gan, K. K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Keil, M.; Knoepfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pernicka, M.; Perera, L.; Potenza, R.; Riester, J. L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Vincenzo, B.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

    Chemical Vapor Deposition (CVD) diamond has been discussed extensively as an alternative sensor material for use very close to the interaction region of the LHC and other machines where extreme radiation conditions exist. During the last seven years the RD42 collaboration has developed diamond detectors and tested them with LHC electronics towards the end of creating a device usable by experiments. The most recent results of this work are presented. Recently, a new form of CVD diamond has been developed: single crystal CVD diamond which resolves many of the issues associated with poly-crystalline CVD material. The first tests of this material are also presented.

  14. New developments in CVD diamond for detector applications

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W. [HEPHY, Vienna (Austria); Berdermann, E. [GSI, Darmstadt (Germany); Bergonzo, P.; Brambilla, A. [LETI/DEIN/SPE/CEA Saclay (France); Boer, W. de [Universitaet Karlsruhe, Karlsruhe (Germany); Bogani, F. [LENS, Florence (Italy); Borchi, E.; Bruzzi, M. [University of Florence (Italy); Colledani, C.; Dulinski, W. [LEPSI, IN2P3/CNRS-ULP, Strasbourg (France); Conway, J.; Doroshenko, J. [Rutgers University, Piscataway (United States); D' Angelo, P.; Furetta, C. [INFN, Milano (Italy); Dabrowski, W. [UMM, Cracow (Poland); Delpierre, P.; Fallou, A. [CPPM, Marseille (France); Eijk, B. van [NIKHEF, Amsterdam (Netherlands); Fischer, P. [Universitaet Bonn, Bonn (Germany); Fizzotti, F. [University of Torino (Italy); Gan, K.K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Keil, M.; Knoepfle, K.T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pernicka, M.; Perera, L.; Potenza, R.; Riester, J.L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Vincenzo, B.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

    2004-07-01

    Chemical Vapor Deposition (CVD) diamond has been discussed extensively as an alternative sensor material for use very close to the interaction region of the LHC and other machines where extreme radiation conditions exist. During the last seven years the RD42 collaboration has developed diamond detectors and tested them with LHC electronics towards the end of creating a device usable by experiments. The most recent results of this work are presented. Recently, a new form of CVD diamond has been developed: single crystal CVD diamond which resolves many of the issues associated with poly-crystalline CVD material. The first tests of this material are also presented. (orig.)

  15. New developments in CVD diamond for detector applications

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Brambilla, A.; Boer, W. de; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Dulinski, W.; Conway, J.; Doroshenko, J.; D'Angelo, P.; Furetta, C.; Dabrowski, W.; Delpierre, P.; Fallou, A.; Eijk, B. van; Fischer, P.; Fizzotti, F.; Gan, K.K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Keil, M.; Knoepfle, K.T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pernicka, M.; Perera, L.; Potenza, R.; Riester, J.L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Vincenzo, B.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

    2004-01-01

    Chemical Vapor Deposition (CVD) diamond has been discussed extensively as an alternative sensor material for use very close to the interaction region of the LHC and other machines where extreme radiation conditions exist. During the last seven years the RD42 collaboration has developed diamond detectors and tested them with LHC electronics towards the end of creating a device usable by experiments. The most recent results of this work are presented. Recently, a new form of CVD diamond has been developed: single crystal CVD diamond which resolves many of the issues associated with poly-crystalline CVD material. The first tests of this material are also presented. (orig.)

  16. Application of CVD diamond film for radiation detection

    International Nuclear Information System (INIS)

    Zhou Haiyang; Zhu Xiaodong; Zhan Rujuan

    2005-01-01

    With the development of diamond synthesis at low pressure, the CVD diamond properties including electronic characteristics have improved continuously. Now the fabrication of electronic devices based on the CVD diamond has been one of hot research subjects in this field. Due to many unique advantages, such as high signal-noise ratio, fast time response, and normal output in extremely harsh surrounding, the CVD diamond radiation detector has attracted more and more interest. In this paper, we have reviewed the development and status of the CVD diamond radiation detector. The prospect of this detector is described. (authors)

  17. Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

    International Nuclear Information System (INIS)

    Dewan, Namrata; Sreenivas, K; Gupta, Vinay

    2008-01-01

    High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO 2 /ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO 2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO 2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO 2 thin film (∼(1.6–3.1) × 10 −3 λ) is required to achieve temperature-stable SAW devices based on diamond

  18. Study of the optical properties of TeO2-PbO-TiO2 glass system

    Directory of Open Access Journals (Sweden)

    Raul F. Cuevas

    1998-06-01

    Full Text Available We describe the preparation and some optical properties of high refractive index TeO2-PbO-TiO2 glass system. Highly homogeneous glasses were obtained by agitating the mixture during the melting process in an alumina crucible. The characterization was done by X-ray diffraction, Raman scattering, light absorption and linear refractive index measurements. The results show a change in the glass structure as the PbO content increases: the TeO4 trigonal bipyramids characteristics of TeO2 glasses transform into TeO3 trigonal pyramids. However, the measured refractive indices are almost independent of the glass composition. We show that third-order nonlinear optical susceptibilities calculated from the measured refractive indices using Lines' theoretical model are also independent of the glass composition.

  19. Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

    Science.gov (United States)

    Dewan, Namrata; Sreenivas, K.; Gupta, Vinay

    2008-08-01

    High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO2/ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO2 thin film (~(1.6-3.1) × 10-3λ) is required to achieve temperature-stable SAW devices based on diamond.

  20. CVD diamond detectors for ionizing radiation

    CERN Document Server

    Friedl, M; Bauer, C; Berfermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

    1999-01-01

    In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2*4 cm/sup 2/ have been grown and refined for better charge collection properties, which are measured with a beta source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5*10/sup 15/ cm/sup -2/ to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (16 refs).

  1. CVD diamond sensors for charged particle detection

    CERN Document Server

    Krammer, Manfred; Berdermann, E; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dencuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zöller, M

    2001-01-01

    CVD diamond material was used to build position-sensitive detectors for single-charged particles to be employed in high-intensity physics experiments. To obtain position information, metal contacts shaped as strips or pixels are applied to the detector surface for one- or two- dimensional coordinate measurement. Strip detectors 2*4 cm/sup 2/ in size with a strip distance of 50 mu m were tested. Pixel detectors of various pixel sizes were bump bonded to electronics chips and investigated. A key issue for the use of these sensors in high intensity experiments is the radiation hardness. Several irradiation experiments were carried out with pions, protons and neutrons exceeding a fluence of 10/sup 15/ particles/cm/sup 2/. The paper presents an overview of the results obtained with strip and pixel detectors in high-energy test beams and summarises the irradiation studies. (8 refs).

  2. CVD diamond detectors for ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Friedl, M. E-mail: markus.friedl@cern.ch; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

    1999-10-01

    In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2x4 cm{sup 2} have been grown and refined for better charge collection properties, which are measured with a {beta} source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5x10{sup 15} cm{sup -2} to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (author)

  3. CVD diamond detectors for ionizing radiation

    Science.gov (United States)

    Friedl, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

    1999-10-01

    In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2×4 cm2 have been grown and refined for better charge collection properties, which are measured with a β source or in a testbeam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5×10 15 cm-2 to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics.

  4. Premature menopause linked to CVD and osteoporosis.

    Science.gov (United States)

    Park, Claire; Overton, Caroline

    2010-03-01

    Premature menopause affects 1% of women under the age of 40, the usual age of the menopause is 51. Most women will present with irregular periods or no periods at all with or without climacteric symptoms. Around 10% of women present with primary amenorrhoea. A careful history and examination are required. It is important to ask specifically about previous chemotherapy or radiotherapy and to look for signs of androgen excess e.g. polycystic ovarian syndrome, adrenal problems e.g. galactorrhoea and thyroid goitres. Once pregnancy has been excluded, a progestagen challenge test can be performed in primary care. Norethisterone 5 mg tds po for ten days or alternatively medroxyprogesterone acetate 10 mg daily for ten days is prescribed. A withdrawal bleed within a few days of stopping the norethisterone indicates the presence of oestrogen and bleeding more than a few drops is considered a positive withdrawal bleed. The absence of a bleed indicates low levels of oestrogen, putting the woman at risk of CVD and osteoporosis. FSH levels above 30 IU/l are an indicator that the ovaries are failing and the menopause is approaching or has occurred. It should be remembered that FSH levels fluctuate during the month and from one month to the next, so a minimum of two measurements should be made at least four to six weeks apart. The presence of a bleed should not exclude premature menopause as part of the differential diagnosis as there can be varying and unpredictable ovarian function remaining. The progestagen challenge test should not be used alone, but in conjunction with FSH, LH and oestradiol. There is no treatment for premature menopause. Women desiring pregnancy should be referred to a fertility clinic and discussion of egg donation. Women not wishing to become pregnant should be prescribed HRT until the age of 50 to control symptoms of oestrogen deficiency and reduce the risks of osteoporosis and CVD.

  5. Upconversion in rare earth ions doped TeO2-ZnO glass

    International Nuclear Information System (INIS)

    Mohanty, Deepak Kumar; Rai, Vineet Kumar

    2012-01-01

    The Er 3+ /Yb 3+ doped/codoped TeO 2 -ZnO glasses have been fabricated by conventional melt and quenching technique. The absorption spectra of the doped/codoped glasses have been performed. The visible upconversion emissions of both doped and codoped glasses have been observed using 808 nm diode laser excitation. The process involved in upconversion emissions has been discussed in detail. (author)

  6. On the physical parametrization and magnetic analogs of the Emparan-Teo dihole solution

    International Nuclear Information System (INIS)

    Cazares, J.A.; Garcia-Compean, H.; Manko, V.S.

    2008-01-01

    The Emparan-Teo non-extremal black dihole solution is reparametrized using Komar quantities and the separation distance as arbitrary parameters. We show how the potential A 3 can be calculated for the magnetic analogs of this solution in the Einstein-Maxwell and Einstein-Maxwell-dilaton theories. We also demonstrate that, similar to the extreme case, the external magnetic field can remove the supporting strut in the non-extremal black dihole too

  7. 2.3 µm laser potential of TeO2 based glasses

    Science.gov (United States)

    Denker, B. I.; Dorofeev, V. V.; Galagan, B. I.; Motorin, S. E.; Sverchkov, S. E.

    2017-09-01

    Tm3+ doped TeO2-based well-dehydrated glasses were synthesized and investigated. The analysis of their spectral and relaxation properties have showed that these glasses can be a suitable host for bulk and fiber lasers emitting at ~2.3 µm wavelength (3H4-3H5 Tm3+ transition). Laser action in the bulk glass sample was demonstrated.

  8. Kinetic study and application of analytical techniques in the obtention of TeO2 for the production of 131 I

    International Nuclear Information System (INIS)

    Plata D, G.

    2006-01-01

    The objectives of this investigation work were: A) To synthesize TeO 2 starting from the reaction among the Te and HNO 3 with a superior yield to 90% b) To determine the good temperature of obtaining of the TeO 2 at laboratory level, c) To determine those constant of reaction kinetics, for each one of the tests carried out to different temperatures, and the activation energy of the reaction, d) To characterize the produced TeO 2 , e) To check the viability of using the obtained TeO 2 as raw matter in the production of 131 I in order to contribute to the technological development of our country inside the radioisotope production area. The production process of TeO 2 consists primarily of seven phases: 1) Preparing and assembly of the production equipment of TeO 2 , 2) Oxidation reaction of tellurium, 3) Drying and elimination of sludges of TeO 2 , 4) Sintering of TeO 2 , 5) Characterization of the TeO 2 by means of analytical techniques, 6) Irradiation of the TeO 2 , 7) Quality control. The present document has five chapters, which allow the reader to follow the development of this work to achieve the objectives and to contrast with the hypothesis of the work. (Author)

  9. Design and construction of the equipment and obtention process of TeO2 for the 131 I production

    International Nuclear Information System (INIS)

    Alanis M, J.

    2000-09-01

    This project was carried out in the National Institute of Nuclear Research, Nuclear Center of Mexico (ININ), with the name 'A New Method to Obtain 131 I by Neutron Irradiation of TeO 2 and it Dry Distillation'. This work establishes the optimal parameters to produce 131 I by neutron irradiation and foundry of TeO 2 sinterized. The TeO 2 of high purity was produced adding HNO 3 to the metallic tellurium (Merck 8100) and heating several samples to different temperatures until dryness in presence of an air current. The optimal conditions of temperature and reaction velocity were obtained, as well as of drying and sintering, to obtain TeO 2 crystals with high purity able to retain the 131 I produced by the radioactive decay. After drying and purified by the heating, the TeO 2 was sinterized, applying a next temperature to it melting point by few minutes, enough to create cavities in the middle of it crystalline structure, where the 131 I in gas form produced by the decay of the 131 Te it is retained, one time that the TeO 2 is bombarded with thermal neutrons in the nuclear reactor. Then, the reactions 130 Te(n, γ) 131 Te m (t 1/2 = 30 h) and 130 Te(n, γ) 131 Te (t 1/2 = 24.8 m) with an optimal irradiation time of 2.5 h. (Author)

  10. Hybrid NOTES: TEO for transanal total mesorectal excision: intracorporeal resection and anastomosis.

    Science.gov (United States)

    Serra-Aracil, Xavier; Mora-López, Laura; Casalots, Alex; Pericay, Carles; Guerrero, Raul; Navarro-Soto, Salvador

    2016-01-01

    Laparoscopic surgery for rectal TME achieves better patient recovery, lower morbidity, and shorter hospital stay than open surgery. However, in laparoscopic rectal surgery, the overall conversion rate is nearly 20%. Transanal TME combined with laparoscopy, known as Hybrid NOTES, is a less invasive procedure that provides adequate solutions to some of the limitations of rectal laparoscopy. Transanal TME via TEO with technical variants (intracorporeal resection and anastomosis, TEO review of the anastomosis) attempts to standardize and simplify the procedure. Prospective observational study was used describe and assess the technique in terms of conversion to open surgery, overall morbidity, surgical site infection and hospital stay. The sample comprised consecutive patients diagnosed with rectal tumor less than 10 cm from the anal verge who were candidates for low anterior resection using TME (except T4). Demographic, surgical, postoperative, and pathological variables were analyzed, as well as morbidity rates. From September 2012 to August 2014, 32 patients were included. The conversion rate was 0%. Overall morbidity was 31.3%, SSI rate was 9.4%, and mean hospital stay was 8 days. Oncological radical criteria were achieved with pathological parameters of 94% of complete TME and a median circumferential margin of 13 mm. The introduction of technical variants of TEO for transanal resection can facilitate a procedure that requires extensive experience in transanal and laparoscopic surgery. Studies of sphincter function, quality of life, and long-term oncological outcome are now necessary.

  11. Effect of TeO2 on the elastic moduli of sodium borate glasses

    International Nuclear Information System (INIS)

    Saddeek, Y.B.; Abd El Latif, Lamia

    2004-01-01

    Sodium borate glass containing tellurite as Te x Na 2-2x B 4-4x O 7-5x with x=0, 0.05, 0.15, 0.25 and 0.35 have been prepared by rapid quenching. Ultrasonic velocity (both longitudinal and shear) measurements have been made using a transducer operated at the fundamental frequency of 4 MHz at room temperature. The density was measured by the conventional Archimedes method. The elastic moduli, the Debye temperature, Poisson's ratio, and the parameters derived from the Makishima-Mackenzie model and the bond compression model have been obtained as a function of TeO 2 content. The monotonic decrease in the velocities and the elastic moduli, and the increase in the ring diameter and the ratio K bc /K e as a function of TeO 2 modifier content reveals the loose packing structure, which is attributed to the increase in the molar volume and the reduction in the vibrations of the borate lattice. The observed results confirm that the addition of TeO 2 changes the rigid character of Na 2 B 4 O 7 to a matrix of ionic behaviour bonds (NBOs). This is due to the creation of more and more discontinuities and defects in the glasses, thus breaking down the borax structure

  12. Diamond radiation detectors II. CVD diamond development for radiation detectors

    International Nuclear Information System (INIS)

    Kania, D.R.

    1997-01-01

    Interest in radiation detectors has supplied some of the impetus for improving the electronic properties of CVD diamond. In the present discussion, we will restrict our attention to polycrystalhne CVD material. We will focus on the evolution of these materials over the past decade and the correlation of detector performance with other properties of the material

  13. Lipids, atherosclerosis and CVD risk: is CRP an innocent bystander?

    DEFF Research Database (Denmark)

    Nordestgaard, B G; Zacho, J

    2009-01-01

    AIM: To evaluate recent human studies with respect to the interpretation of whether elevated plasma levels of C-reactive protein (CRP) cause cardiovascular disease (CVD), or whether elevated CRP levels more likely is an innocent bystander. DATA SYNTHESIS: Elevated CRP concentrations...... and vulnerability of atherosclerotic plaques, and thus simply an innocent bystander in CVD....

  14. Micro-strip sensors based on CVD diamond

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D. E-mail: dirk.meier@cern.ch; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M

    2000-10-11

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

  15. Micro-strip sensors based on CVD Diamond

    CERN Document Server

    Adam, W; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Krammer, Manfred; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S R; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zoeller, M M

    2000-01-01

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

  16. Micro-strip sensors based on CVD diamond

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

    2000-01-01

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation

  17. Micro-strip sensors based on CVD diamond

    Science.gov (United States)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; RD42 Collaboration

    2000-10-01

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

  18. Fabrication of aligned carbon nanotubes on Cu catalyst by dc plasma-enhanced catalytic decomposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Zhejuan [Department of Physics, Engineering Research Center for Nanophotonics and Advanced Instrument, East China Normal University, North Zhongshan Road 3663, 200062 Shanghai (China); Shakerzadeh, Maziar; Tay, Beng Kang; Li Xiaocheng; Tan Chongwei [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue 50, 639798 Singapore (Singapore); Lin Lifeng; Guo Pingsheng; Feng Tao [Department of Physics, Engineering Research Center for Nanophotonics and Advanced Instrument, East China Normal University, North Zhongshan Road 3663, 200062 Shanghai (China); Sun Zhuo, E-mail: zsun@phy.ecnu.edu.cn [Department of Physics, Engineering Research Center for Nanophotonics and Advanced Instrument, East China Normal University, North Zhongshan Road 3663, 200062 Shanghai (China)

    2009-04-01

    Aligned multi-walled carbon nanotubes (ACNTs) are deposited using copper (Cu) catalyst on Chromium (Cr)-coated substrate by plasma-enhanced chemical vapor deposition at temperature of 700 deg. C. Acetylene gas has been used as the carbon source while ammonia is used for diluting and etching. The thicknesses of Cu films on Cr-coated Si (100) substrates are controlled by deposition time of magnetron sputtering. The growth behaviors and quality of ACNTs are investigated by scanning electron microscopy (SEM) and transmission electron microscopy. The different performance of ACNTs on various Cu films is explained by referring to the graphitic order as detected by Raman spectroscopy. The results indicate that the ACNTs are formed in tip-growth model where Cu is used as a novel catalyst, and the thickness of Cu films is responsible to the diameter and quality of synthesized CNTs.

  19. Microwave plasma-enhanced chemical vapour deposition growth of carbon nanostructures

    Directory of Open Access Journals (Sweden)

    Shivan R. Singh

    2010-05-01

    Full Text Available The effect of various input parameters on the production of carbon nanostructures using a simple microwave plasma-enhanced chemical vapour deposition technique has been investigated. The technique utilises a conventional microwave oven as the microwave energy source. The developed apparatus is inexpensive and easy to install and is suitable for use as a carbon nanostructure source for potential laboratory-based research of the bulk properties of carbon nanostructures. A result of this investigation is the reproducibility of specific nanostructures with the variation of input parameters, such as carbon-containing precursor and support gas flow rate. It was shown that the yield and quality of the carbon products is directly controlled by input parameters. Transmission electron microscopy and scanning electron microscopy were used to analyse the carbon products; these were found to be amorphous, nanotubes and onion-like nanostructures.

  20. Diamond growth on Fe-Cr-Al alloy by H2-plasma enhanced graphite etching

    International Nuclear Information System (INIS)

    Li, Y. S.; Hirose, A.

    2007-01-01

    Without intermediate layer and surface pretreatment, adherent diamond films with high initial nucleation density have been deposited on Fe-15Cr-5Al (wt. %) alloy substrate. The deposition was performed using microwave hydrogen plasma enhanced graphite etching in a wide temperature range from 370 to 740 degree sign C. The high nucleation density and growth rate of diamond are primarily attributed to the unique precursors used (hydrogen plasma etched graphite) and the chemical nature of the substrate. The improvement in diamond adhesion to steel alloys is ascribed to the important role played by Al, mitigation of the catalytic function of iron by suppressing the preferential formation of loose graphite intermediate phase on steel surface

  1. High Current Emission from Patterned Aligned Carbon Nanotubes Fabricated by Plasma-Enhanced Chemical Vapor Deposition

    Science.gov (United States)

    Cui, Linfan; Chen, Jiangtao; Yang, Bingjun; Jiao, Tifeng

    2015-12-01

    Vertically, carbon nanotube (CNT) arrays were successfully fabricated on hexagon patterned Si substrates through radio frequency plasma-enhanced chemical vapor deposition using gas mixtures of acetylene (C2H2) and hydrogen (H2) with Fe/Al2O3 catalysts. The CNTs were found to be graphitized with multi-walled structures. Different H2/C2H2 gas flow rate ratio was used to investigate the effect on CNT growth, and the field emission properties were optimized. The CNT emitters exhibited excellent field emission performance (the turn-on and threshold fields were 2.1 and 2.4 V/μm, respectively). The largest emission current could reach 70 mA/cm2. The emission current was stable, and no obvious deterioration was observed during the long-term stability test of 50 h. The results were relevant for practical applications based on CNTs.

  2. Stress hysteresis and mechanical properties of plasma-enhanced chemical vapor deposited dielectric films

    Science.gov (United States)

    Thurn, Jeremy; Cook, Robert F.; Kamarajugadda, Mallika; Bozeman, Steven P.; Stearns, Laura C.

    2004-02-01

    A comprehensive survey is described of the responses of three plasma-enhanced chemical vapor deposited dielectric film systems to thermal cycling and indentation contact. All three films—silicon oxide, silicon nitride, and silicon oxy-nitride—exhibited significant nonequilibrium permanent changes in film stress on thermal cycling or annealing. The linear relationship between stress and temperature changed after the films were annealed at 300 °C, representing a structural alteration in the film reflecting a change in coefficient of thermal expansion or biaxial modulus. A double-substrate method was used to deduce both thermoelastic properties before and after the anneal of selected films and the results were compared with the modulus deconvoluted from small-scale depth-sensing indentation experiments (nanoindentation). Rutherford backscattering spectrometry and hydrogen forward scattering were used to deduce the composition of the films and it was found that all the films contained significant amounts of hydrogen.

  3. One-step microwave plasma enhanced chemical vapor deposition (MW-PECVD) for transparent superhydrophobic surface

    Science.gov (United States)

    Thongrom, Sukrit; Tirawanichakul, Yutthana; Munsit, Nantakan; Deangngam, Chalongrat

    2018-02-01

    We demonstrate a rapid and environmental friendly fabrication technique to produce optically clear superhydrophobic surfaces using poly (dimethylsiloxane) (PDMS) as a sole coating material. The inert PDMS chain is transformed into a 3-D irregular solid network through microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. Thanks to high electron density in the microwave-activated plasma, coating can be done in just a single step with rapid deposition rate, typically much shorter than 10 s. Deposited layers show excellent superhydrophobic properties with water contact angles of ∼170° and roll-off angles as small as ∼3°. The plasma-deposited films can be ultrathin with thicknesses under 400 nm, greatly diminishing the optical loss. Moreover, with appropriate coating conditions, the coating layer can even enhance the transmission over the entire visible spectrum due to a partial anti-reflection effect.

  4. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Directory of Open Access Journals (Sweden)

    Chia-Man Chou

    2017-07-01

    Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  5. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Science.gov (United States)

    Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

    2017-07-01

    We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  6. Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films

    Science.gov (United States)

    Thurn, Jeremy; Cook, Robert F.

    2002-02-01

    The mechanical response of plasma-enhanced chemical vapor deposited SiO2 to thermal cycling is examined by substrate curvature measurement and depth-sensing indentation. Film properties of deposition stress and stress hysteresis that accompanied thermal cycling are elucidated, as well as modulus, hardness, and coefficient of thermal expansion. Thermal cycling is shown to result in major plastic deformation of the film and a switch from a compressive to a tensile state of stress; both athermal and thermal components of the net stress alter in different ways during cycling. A mechanism of hydrogen incorporation and release from as-deposited silanol groups is proposed that accounts for the change in film properties and state of stress.

  7. Structured nanocarbon on various metal foils by microwave plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Rius, G; Yoshimura, M

    2013-01-01

    We present a versatile process for the engineering of nanostructures made of crystalline carbon on metal foils. The single step process by microwave plasma-enhance chemical vapor deposition is demonstrated for various substrate materials, such as Ni or Cu. Either carbon nanotubes (CNT) or carbon nanowalls (CNW) are obtained under same growth conditions and without the need of additional catalyst. The use of spacer and insulator implies a certain control over the kind of allotropes that are obtained. High density and large surface area are morphological characteristics of the thus obtained C products. The possibility of application on many metals, and in the alloy composition, on as-delivered commercially available foils indicates that this strategy can be adapted to a bunch of specific applications, while the production of C nanostructures is of remarkable simplicity.

  8. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found......-product. A model, that combine the chemical net reaction and the stoichiometric rules, is found to agree with measured deposition rates for given material compositions. Effects of annealing in a nitrogen atmosphere has been investigated for the 400 °C– 1100 °C temperature range. It is observed that PECVD oxy...

  9. Plasma-enhanced chemical vapor deposition of graphene on copper substrates

    Directory of Open Access Journals (Sweden)

    Nicolas Woehrl

    2014-04-01

    Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

  10. Preparation of carbon nanotubes with different morphology by microwave plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M. [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan); Mansurov, Zulkhair [Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Tokmoldin, S.Zh. [Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan)

    2010-04-15

    In this work we present a part of our results about the preparation of carbon nanotube with different morphologies by using microwave plasma enhanced chemical vapour deposition MPECVD. Well aligned, curly, carbon nanosheets, coiled carbon sheets and carbon microcoils have been prepared. We have investigated the effect of the different growth condition parameters such as the growth temperature, pressure and the hydrogen to methane flow rate ratio on the morphology of the carbon nanotubes. The results showed that there is a great dependence of the morphology of carbon nanotubes on these parameters. The yield of the carbon microcoils was high when the growth temperature was 700 C. There is a linear relation between the growth rate and the methane to hydrogen ratio. The effect of the gas pressure on the CNTs was also studied. Our samples were investigated by scanning electron microscope and Raman spectroscopy (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Two dimensional radial gas flows in atmospheric pressure plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Kim, Gwihyun; Park, Seran; Shin, Hyunsu; Song, Seungho; Oh, Hoon-Jung; Ko, Dae Hong; Choi, Jung-Il; Baik, Seung Jae

    2017-12-01

    Atmospheric pressure (AP) operation of plasma-enhanced chemical vapor deposition (PECVD) is one of promising concepts for high quality and low cost processing. Atmospheric plasma discharge requires narrow gap configuration, which causes an inherent feature of AP PECVD. Two dimensional radial gas flows in AP PECVD induces radial variation of mass-transport and that of substrate temperature. The opposite trend of these variations would be the key consideration in the development of uniform deposition process. Another inherent feature of AP PECVD is confined plasma discharge, from which volume power density concept is derived as a key parameter for the control of deposition rate. We investigated deposition rate as a function of volume power density, gas flux, source gas partial pressure, hydrogen partial pressure, plasma source frequency, and substrate temperature; and derived a design guideline of deposition tool and process development in terms of deposition rate and uniformity.

  12. Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Sanchez, G.; Wu, A.; Tristant, P.; Tixier, C.; Soulestin, B.; Desmaison, J.; Bologna Alles, A.

    2008-01-01

    AlN thin films for acoustic wave devices were prepared by Microwave Plasma Enhanced Chemical Vapor Deposition under different process conditions, employing Si (100) and Pt (111)/SiO 2 /Si (100) substrates. The films were characterized by X-ray diffraction, Fourier transform infrared transmission spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The values of the distance between the plasma and the tri-methyl-aluminum precursor injector, the radiofrequency bias potential, and the substrate temperature were central in the development of polycrystalline films. The choice of the chamber total pressure during deposition allowed for the development of two different crystallographic orientations, i.e., or . The film microstructures exhibited in general a column-like growth with rounded tops, an average grain size of about 40 nm, and a surface roughness lower than 20 nm under the best conditions

  13. CVD carbon powders modified by ball milling

    Directory of Open Access Journals (Sweden)

    Kazmierczak Tomasz

    2015-09-01

    Full Text Available Carbon powders produced using a plasma assisted chemical vapor deposition (CVD methods are an interesting subject of research. One of the most interesting methods of synthesizing these powders is using radio frequency plasma. This method, originally used in deposition of carbon films containing different sp2/sp3 ratios, also makes possible to produce carbon structures in the form of powder. Results of research related to the mechanical modification of these powders have been presented. The powders were modified using a planetary ball mill with varying parameters, such as milling speed, time, ball/powder mass ratio and additional liquids. Changes in morphology and particle sizes were measured using scanning electron microscopy and dynamic light scattering. Phase composition was analyzed using Raman spectroscopy. The influence of individual parameters on the modification outcome was estimated using statistical method. The research proved that the size of obtained powders is mostly influenced by the milling speed and the amount of balls. Powders tend to form conglomerates sized up to hundreds of micrometers. Additionally, it is possible to obtain nanopowders with the size around 100 nm. Furthermore, application of additional liquid, i.e. water in the process reduces the graphitization of the powder, which takes place during dry milling.

  14. CVD diamond deposition onto dental burs

    International Nuclear Information System (INIS)

    Ali, N.; Sein, H.

    2001-01-01

    A hot-filament chemical vapor deposition (HFCVD) system has been modified to enable non-planar substrates, such as metallic wires and dental burs, to be uniformly coated with thin polycrystalline diamond films. Initially, diamond deposition was carried out on titanium and tantalum wires in order to test and optimize the system. High growth rates of the order of approx. 8 /hr were obtained when depositing diamond on titanium wires using the vertical filament arrangement. However, lower growth rates of the order of 4-5meu m/hr were obtained with diamond deposition on tantalum wires. To extend the work towards a practical biomedical application tungsten carbide dental burs were coated with diamond films. The as-grown films were found to be polycrystalline and uniform over the cutting tip. Finally, the costs relating to diamond CVD onto dental burs have been presented in this paper. The costs relating to coating different number of burs at a time and the effect of film thickness on costs have been included in this investigation. (author)

  15. CVD diamond substrates for electronic devices

    International Nuclear Information System (INIS)

    Holzer, H.

    1996-03-01

    In this study the applicability of chemical vapor deposition (CVD) diamond as a material for heat spreaders was investigated. Economical evaluations on the production of heat spreaders were also performed. For the diamond synthesis the hot-filament and microwave method were used respectively. The deposition parameters were varied in a way that free standing diamond layers with a thickness of 80 to 750 microns and different qualities were obtained. The influence of the deposition parameters on the relevant film properties was investigated and discussed. With both the hot-filament and microwave method it was possible to deposit diamond layers having a thermal conductivity exceeding 1200 W/mK and therefore to reach the quality level for commercial uses. The electrical resistivity was greater than 10 12 Ωcm. The investigation of the optical properties was done by Raman-, IR- and cathodoluminescence spectroscopy. Because of future applications of diamond-aluminium nitride composites as highly efficient heat spreaders diamond deposition an AIN was investigated. An improved substrate pretreatment prior to diamond deposition showed promising results for better performance of such composite heat spreaders. Both free standing layers and diamond-AIN composites could be cut by a CO2 Laser in Order to get an exact size geometry. A reduction of the diamond surface roughness was achieved by etching with manganese powder or cerium. (author)

  16. CVD-Graphene-Based Flexible, Thermoelectrochromic Sensor

    Directory of Open Access Journals (Sweden)

    Adam Januszko

    2017-01-01

    Full Text Available The main idea behind this work was demonstrated in a form of a new thermoelectrochromic sensor on a flexible substrate using graphene as an electrically reconfigurable thermal medium (TEChrom™. Our approach relies on electromodulation of thermal properties of graphene on poly(ethylene terephthalate (PET via mechanical destruction of a graphene layer. Graphene applied in this work was obtained by chemical vapor deposition (CVD technique on copper substrate and characterized by Raman and scanning tunneling spectroscopy. Electrical parameters of graphene were evaluated by the van der Pauw method on the transferred graphene layers onto SiO2 substrates by electrochemical delamination method. Two configurations of architecture of sensors, without and with the thermochromic layer, were investigated, taking into account the increase of voltage from 0 to 50 V and were observed by thermographic camera to define heat energy. Current-voltage characteristics obtained for the sensor with damaged graphene layer are linear, and the resistivity is independent from the current applied. The device investigated under 1000 W/m2 exhibited rise of resistivity along with increased temperature. Flexible thermoelectrochromic device with graphene presented here can be widely used as a sensor for both the military and civil monitoring.

  17. Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

    NARCIS (Netherlands)

    Saeed, S.; Buters, F.; Dohnalova, K.; Wosinski, L.; Gregorkiewicz, T.

    2014-01-01

    We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO2. Optical characterization

  18. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    DEFF Research Database (Denmark)

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  19. Low-temperature sintering and microwave dielectric properties of Al2TeO6–TeO2 ceramics

    International Nuclear Information System (INIS)

    Kagomiya, Isao; Kodama, Yuichiro; Shimizu, Yukihiro; Kakimoto, Ken-ichi; Ohsato, Hitoshi; Miyauchi, Yasuharu

    2015-01-01

    Highlights: • This is the first study of dielectric properties of Al 2 TeO 6 –TeO 2 sintered at 900 °C. • The sintering at 900 °C contributed to densification, but it causes TeO 2 evaporation. • The annealing at 750 °C was effective for the further densification. • The both ε r and Q · f in the Al 2 TeO 6 –TeO 2 were improved with the annealing. - Abstract: We propose Al 2 TeO 6 –TeO 2 ceramics as a candidate for use as low-temperature co-fired ceramics (LTCC). We investigated microwave dielectric properties and low-temperature sintering conditions for Al 2 TeO 6 –TeO 2 ceramics. The calcined Al 2 TeO 6 powders were sintered at 900 °C for 2–10 h with 30–50 wt% additive TeO 2 . X-ray powder diffraction patterns showed that the sintered samples were Al 2 TeO 6 –TeO 2 composite with no other phase. The apparent density was improved with the additive TeO 2 content of up to 45 wt%. The dielectric constant (ε r ) increased by adding TeO 2 content from 35 to 45 wt%, although the quality factor (Q · f) decreased. During sintering at 900 °C, the ε r of the Al 2 TeO 6 –TeO 2 decreased slightly, whereas the Q · f increased gradually. The observed microstructures showed that the longer sintering time makes fewer pores in Al 2 TeO 6 –TeO 2 ceramics. Sintering at 900 °C for a long time contributes to densification, but it simultaneously causes TeO 2 evaporation. To prevent TeO 2 evaporation, we investigated the effects of annealing at 750 °C after sintering at 900 °C. Apparent densities or ε r for the annealed samples were higher than those of the non-annealed samples. The Q · f improved with increasing annealing duration time, suggesting that sintering proceeded well during annealing with slower TeO 2 evaporation at 750 °C. The results show that annealing at 750 °C is effective to facilitate sintering and to control TeO 2 evaporation

  20. Thermodynamic characterization of Ni3TeO6, Ni2Te3O8 and NiTe2O5

    Science.gov (United States)

    Dawar, Rimpi; Babu, R.; Ananthasivan, K.; Anthonysamy, S.

    2017-09-01

    Measurement of vapour pressure of TeO2(g) over the biphasic mixture Ni3TeO6 (s) + NiO(s) in the temperature range 1143-1272 K was carried out using transpiration-thermogravimetric technique (TTG). Gibbs energy of formation of Ni3TeO6 was obtained from the temperature dependence of vapour pressure of TeO2 (g) generated by the incongruent vapourisation reaction, Ni3TeO6 (s) → NiO(s) + TeO2 (g) + 1/2 O2 in the temperature range 1143-1272 K. An isoperibol type drop calorimeter was used to measure the enthalpy increments of Ni3TeO6, Ni2Te3O8 and NiTe2O5. Thermodynamic functions viz., heat capacity, entropy and Gibbs energy functions of these compounds were derived from the experimentally measured enthalpy increment values. Third-law analysis was carried out to ascertain absence of temperature dependent systematic errors in the measurement of vapour pressure of TeO2 (g). A value of -1265.1 ± 1.5 kJ mol-1 was obtained for Δ Hf,298K o (Ni3TeO6) using third-law analysis.

  1. Equipment and obtention process of 131I by dry distillation starting from TeO2

    International Nuclear Information System (INIS)

    Alanis M, J.

    2000-08-01

    The present invention refers to an equipment and process for the obtaining of 131 I by dry distillation starting from TeO 2 that has three interconnected systems, the manipulation system, the electric system and the distillation system, the combination of these systems, allows to improve the yield and the separation of the 131 I during the distillation process, since inside the electric system it is an oven that has a special design based on a temperature gradient. The more relevant aspects of the equipment its are the design of each one of its components that give as result the effectiveness of the production of 131 I in routinary form (industrial) whose final product can end up reaching a radiochemical purity up to 99% and a radionuclide purity of approximately 100%. The object of this invention is to provide a distillation equipment different to those that at the moment exist, thanks to its novel internal construction whose main characteristics already gather advantages on those existent. The reaction of obtaining of the TeO 2 , the development of the technique and studies of TeO 2 sintering and the irradiation experiments, its contributed to characterize with more precision the 'new process of obtaining of 131 I by dry via starting from the Te' developed in the ININ, and in this way it was achieved a more pure product, more economic, with less risks, from a point of view of Radiological Safety and mainly that it avoids the import to the country and it makes to self-sufficient Mexico in the production of 131 I. (Author)

  2. CVD refractory metals and alloys for space nuclear power application

    International Nuclear Information System (INIS)

    Yang, L.; Gulden, T.D.; Watson, J.F.

    1984-01-01

    CVD technology has made significant contributions to the development of space nuclear power systems during the period 1962 to 1972. For the in-core thermionic concept, CVD technology is essential to the fabrication of the tungsten electron emitter. For the liquid metal cooled fuel pin using uranium nitride as fuel and T-111 and Nb-1 Zr as cladding, a tungsten barrier possibly produced by CVD methods is essential to the fuel-cladding compatibility at the designed operating temperature. Space power reactors may use heat pipes to transfer heat from the reactor core to the conversion system. CVD technology has been used for fabricating the heat pipe used as cross-flow heat exchanger, including the built-in channels on the condenser wall for liquid lithium return. 28 references, 17 figures

  3. Investigation of defects in CVD diamond: Influence for radiotherapy applications

    International Nuclear Information System (INIS)

    Guerrero, M.J.; Tromson, D.; Bergonzo, P.; Barrett, R.

    2005-01-01

    In this study we present the potentialities of CVD diamond as an ionisation chamber for radiotherapy applications. Trapping levels present in CVD diamond are characterised using Thermally Stimulated Current (TSC) method with X-ray sources. The influence of the corresponding defects on the detector response is investigated and compared to those observed in natural diamond. Also, their spatial distribution across a large area polycrystalline diamond ionisation chamber is discussed. Results show the relative influence of two different populations of trapping levels in CVD diamond whose effect is crucial for radiotherapy applications. To partially overcome the defect detrimental effects, we propose to use CVD diamond ionisation chambers at moderate temperatures from 70 to 100 deg. C that could be provided by self heating of the device, for a dramatically improved stability and reproducibility

  4. The gate oxide integrity of CVD tungsten polycide

    International Nuclear Information System (INIS)

    Wu, N.W.; Su, W.D.; Chang, S.W.; Tseng, M.F.

    1988-01-01

    CVD tungsten polycide has been demonstrated as a good gate material in recent very large scale integration (VLSI) technology. CVD tungsten silicide offers advantages of low resistivity, high temperature stability and good step coverage. On the other hand, the polysilicon underlayer preserves most characteristics of the polysilicon gate and acts as a stress buffer layer to absorb part of the thermal stress origin from the large thermal expansion coefficient of tungsten silicide. Nevertheless, the gate oxide of CVD tungsten polycide is less stable or reliable than that of polysilicon gate. In this paper, the gate oxide integrity of CVD tungsten polycide with various thickness combinations and different thermal processes have been analyzed by several electrical measurements including breakdown yield, breakdown fluence, room temperature TDDB, I-V characteristics, electron traps and interface state density

  5. Improvements in 130Te double beta decay search with cryogenic TeO2 array detectors

    International Nuclear Information System (INIS)

    Alessandrello, A.; Brofferio, C.; Bucci, C.; Caspani, P.; Cremonesi, O.; Fiorini, E.; Giuliani, A.; Nucciotti, A.; Pavan, M.; Pessina, G.; Previtali, E.; Zanotti, L.

    1996-01-01

    Single crystal TeO 2 bolometers have been used since 5 years ago to search for neutrinoless DBD of 130 Te. During the last year, our group has been studying and preparing the first array of 4 crystals, 340 g each, opening this technique to new frontiers in rare events' physics. The results and perspectives of this second generation cryogenic detectors are here reported and discussed, with particular emphasis on the peculiarities which make them feasible for a consistent upgrading of our previous result in DBD search. (orig.)

  6. Structural and thermal properties of tellurite 20Li2O-80TeO2 glasses

    OpenAIRE

    Idalgo, E. [UNESP; Araújo, E. B. [UNESP

    2007-01-01

    O presente trabalho reporta estudos sobre a cristalização em vidros teluretos 20Li2O-80TeO2 induzida a partir de tratamentos térmicos realizados sobre vidros com tamanho de partículas entre 38 µm e 75 µm. Estes estudos foram conduzidos em duas matrizes vítreas tratadas e não tratadas termicamente para aliviar as tensões após o quenching, utilizando-se de forma combinada às técnicas de difração de raios X, calorimetria diferencial de varredura e espectroscopia no infravermelho. Os resultados r...

  7. Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System

    Directory of Open Access Journals (Sweden)

    Shiu-Ko JangJian

    2007-01-01

    Full Text Available The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS, respectively. The experimental results show that the PCR drastically decreases with Cu substrate compared to that with silicon oxide substrate after numerous silicon nitride depositions. To understand the substrate effect on PCR, the surface element analysis and bonding configuration are executed by X-ray photoelectron spectroscopy (XPS. The high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS is used to analyze microelement of metal ions on the surface of shower head in the PECVD chamber. According to Cu substrate, the results show that micro Cu ion and the CuOx bonding can be detected on the surface of shower head. The Cu ion contamination might grab the fluorine radicals produced by NF3 ddissociation in the RPS and that induces the drastic decrease on PCR.

  8. Diamond-like carbon films deposited on polycarbonates by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Guo, C.T. [Department of Computer and Communication, Diwan College of Management, 72141 Taiwan (China)], E-mail: ctguo@dwu.edu.tw

    2008-04-30

    Diamond-like carbon films were coated on optical polycarbonate using plasma-enhanced chemical vapor deposition. A mixture of SiH{sub 4} and CH{sub 4}/H{sub 2} gases was utilized to reduce the internal compressive stress of the deposited films. The structure of the DLC films was characterized as a function of film thickness using Raman spectroscopy. The dependence of G peak positions and the intensity ratio of I{sub D}/I{sub G} on the DLC film thicknesses was analyzed in detail. Other studies involving atomic force microscopy, ultraviolet visible spectrometry, and three adhesion tests were conducted. Good transparency in the visible region, and good adhesion between diamond-like carbon films and polycarbonate were demonstrated. One-time recordings before and after a DLC film was coated on compact rewritable disc substrates were analyzed as a case study. The results reveal that the diamond-like carbon film overcoating the optical polycarbonates effectively protects the storage media.

  9. Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

    Science.gov (United States)

    Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon

    2009-09-01

    In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.

  10. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-01-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I D /I G . Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  11. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Santra, T S; Liu, C H [Institute of Nanoengineering and Microsystems (NEMS), National Tsing Hua University, Hsinchu, Taiwan 30043 (China); Bhattacharyya, T K [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721302, West Bengal (India); Patel, P [Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801 (United States); Barik, T K [School of Applied Sciences, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India)

    2010-06-15

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I{sub D}/I{sub G}. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  12. Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Zhao, Rong; Ahktar, Meysam; Alruqi, Adel; Dharmasena, Ruchira; Jasinski, Jacek B.; Thantirige, Rukshan M.; Sumanasekera, Gamini U.

    2017-05-01

    In this work, we report the electrical transport properties of uniform and vertically oriented graphene (graphene nanowalls) directly synthesized on multiple substrates including glass, Si/SiO2 wafers, and copper foils using radio-frequency plasma enhanced chemical vapor deposition (PECVD) with methane (CH4) as the precursor at relatively low temperatures. The temperature for optimum growth was established with the aid of transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. This approach offers means for low-cost graphene nanowalls growth on an arbitrary substrate with the added advantage of transfer-free device fabrication. The temperature dependence of the electrical transport properties (resistivity and thermopower) were studied in the temperature range, 30-300 K and analyzed with a combination of 2D-variable range hopping (VRH) and thermally activated (TA) conduction mechanisms. An anomalous temperature dependence of the thermopower was observed for all the samples and explained with a combination of a diffusion term having a linear temperature dependence plus a term with an inverse temperature dependence.

  13. Modeling of Sheath Ion-Molecule Reactions in Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes

    Science.gov (United States)

    Hash, David B.; Govindan, T. R.; Meyyappan, M.

    2004-01-01

    In many plasma simulations, ion-molecule reactions are modeled using ion energy independent reaction rate coefficients that are taken from low temperature selected-ion flow tube experiments. Only exothermic or nearly thermoneutral reactions are considered. This is appropriate for plasma applications such as high-density plasma sources in which sheaths are collisionless and ion temperatures 111 the bulk p!asma do not deviate significantly from the gas temperature. However, for applications at high pressure and large sheath voltages, this assumption does not hold as the sheaths are collisional and ions gain significant energy in the sheaths from Joule heating. Ion temperatures and thus reaction rates vary significantly across the discharge, and endothermic reactions become important in the sheaths. One such application is plasma enhanced chemical vapor deposition of carbon nanotubes in which dc discharges are struck at pressures between 1-20 Torr with applied voltages in the range of 500-700 V. The present work investigates The importance of the inclusion of ion energy dependent ion-molecule reaction rates and the role of collision induced dissociation in generating radicals from the feedstock used in carbon nanotube growth.

  14. Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Gates, S. M.; Neumayer, D. A.; Sherwood, M. H.; Grill, A.; Wang, X.; Sankarapandian, M.

    2007-01-01

    The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called 'pSiCOH', using a production 200 mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si-CH 3 species, and lower k is shown to correlate with increased concentration of Si-CH 3 . NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CH x ) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CH x ) content and the presence of C=O and C=C functional groups

  15. Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Iliescu, Ciprian; Chen Bangtao; Wei Jiashen; Pang, A.J.

    2008-01-01

    The paper presents a characterisation of amorphous silicon carbide films deposited in plasma-enhanced chemical vapour deposition (PECVD) reactors for MEMS applications. The main parameter was optimised in order to achieve a low stress and high deposition rate. We noticed that the high frequency mode (13.56 MHz) gives a low stress value which can be tuned from tensile to compressive by selecting the correct power. The low frequency mode (380 kHz) generates high compressive stress (around 500 MPa) due to ion bombardment and, as a result, densification of the layer achieved. Temperature can decrease the compressive value of the stress (due to annealing effect). A low etching rate of the amorphous silicon carbide layer was noticed for wet etching in KOH 30% at 80 o C (around 13 A/min) while in HF 49% the layer is practically inert. A very slow etching rate of amorphous silicon carbide layer in XeF 2 -7 A/min- was observed. The paper presents an example of this application: PECVD-amorphous silicon carbide cantilevers fabricated using surface micromachining by dry-released technique in XeF 2

  16. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  17. Plasma effects in aligned carbon nanoflake growth by plasma-enhanced hot filament chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China); Cheng, Q.J., E-mail: qijin.cheng@xmu.edu.cn [School of Energy Research, Xiamen University, Xiamen 361005 (China); Ostrikov, K. [Plasma Nanoscience Center Australia (PNCA), Manufacturing Flagship, Commonwealth Scientific and Industrial Research Organization, PO Box 218, Lindfield 2070, NSW (Australia); Institute for Future Environments and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane 4000, QLD (Australia); Plasma Nanoscience, School of Physics, The University of Sydney, Sydney 2006, NSW (Australia)

    2015-01-15

    Highlights: • Plasma-specific effects in the growth of carbon nanoflakes (CNFs) are studied. • Electic field in the plasma sheath promotes separation of CNFs from the substrate. • The orentention of GNFs is related to the combined electic force and growth effects. • The high growth grates of aligned GNFs are plasma-related. - Abstract: Carbon nanofilms are directly grown on silicon substrates by plasma-enhanced hot filament chemical vapor deposition in methane environment. It is shown that the nanofilms are composed of aligned carbon nanoflakes by extensive investigation of experimental results of field emission scanning electron microscopy, micro-Raman spectroscopy and transmission electron microscopy. In comparison with the graphene-like films grown without plasmas, the carbon nanoflakes grow in an alignment mode and the growth rate of the films is increased. The effects of the plasma on the growth of the carbon nanofilms are studied. The plasma plays three main effects of (1) promoting the separation of the carbon nanoflakes from the silicon substrate, (2) accelerating the motion of hydrocarbon radicals, and (3) enhancing the deposition of hydrocarbon ions onto the substrate surface. Due to these plasma-specific effects, the carbon nanofilms can be formed from the aligned carbon nanoflakes with a high rate. These results advance our knowledge on the synthesis, properties and applications of graphene-based materials.

  18. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber.

    Science.gov (United States)

    Dechana, A; Thamboon, P; Boonyawan, D

    2014-10-01

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films-analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques-will be discussed.

  19. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    Energy Technology Data Exchange (ETDEWEB)

    Dechana, A. [Program of Physics and General Science, Faculty of Science and Technology, Songkhla Rajabhat University, Songkhla 90000 (Thailand); Thamboon, P. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Boonyawan, D., E-mail: dheerawan.b@cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2014-10-15

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  20. Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

    CERN Document Server

    Kim, H

    2002-01-01

    We have investigated the growth kinetics of plasma-enhanced Ti atomic layer deposition (ALD) using a quartz crystal microbalance. Ti ALD films were grown at temperatures from 20 to 200 deg. C using TiCl sub 4 as a source gas and rf plasma-produced atomic H as the reducing agent. Postdeposition ex situ chemical analyses of thin films showed that the main impurity is oxygen, mostly incorporated during the air exposure prior to analysis. The thickness per cycle, corresponding to the growth rate, was measured by quartz crystal microbalance as a function of various key growth parameters, including TiCl sub 4 and H exposure time, rf plasma power, and sample temperature. The growth rates were independent of TiCl sub 4 exposure above 1x10 sup 3 L, indicating typical ALD mode growth. The key kinetic parameters for Cl extraction reaction and TiCl sub 4 adsorption kinetics were obtained and the growth kinetics were modeled to predict the growth rates based upon these results. Also, the dependency of growth kinetics on d...

  1. Atmospheric pressure plasma enhanced chemical vapor deposition of zinc oxide and aluminum zinc oxide

    International Nuclear Information System (INIS)

    Johnson, Kyle W.; Guruvenket, Srinivasan; Sailer, Robert A.; Ahrenkiel, S. Phillip; Schulz, Douglas L.

    2013-01-01

    Zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films were deposited via atmospheric pressure plasma enhanced chemical vapor deposition. A second-generation precursor, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N′-diethylethylenediamine) zinc, exhibited significant vapor pressure and good stability at one atmosphere where a vaporization temperature of 110 °C gave flux ∼ 7 μmol/min. Auger electron spectroscopy confirmed that addition of H 2 O to the carrier gas stream mitigated F contamination giving nearly 1:1 metal:oxide stoichiometries for both ZnO and AZO with little precursor-derived C contamination. ZnO and AZO thin film resistivities ranged from 14 to 28 Ω·cm for the former and 1.1 to 2.7 Ω·cm for the latter. - Highlights: • A second generation precursor was utilized for atmospheric pressure film growth. • Addition of water vapor to the carrier gas stream led to a marked reduction of ZnF 2 . • Carbonaceous contamination from the precursor was minimal

  2. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    Science.gov (United States)

    Dechana, A.; Thamboon, P.; Boonyawan, D.

    2014-10-01

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  3. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    International Nuclear Information System (INIS)

    Dechana, A.; Thamboon, P.; Boonyawan, D.

    2014-01-01

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al 2 O 3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al 2 O 3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed

  4. Development of TiO2 containing hardmasks through plasma-enhanced atomic layer deposition

    Science.gov (United States)

    De Silva, Anuja; Seshadri, Indira; Chung, Kisup; Arceo, Abraham; Meli, Luciana; Mendoza, Brock; Sulehria, Yasir; Yao, Yiping; Sunder, Madhana; Truong, Hoa; Matham, Shravan; Bao, Ruqiang; Wu, Heng; Felix, Nelson M.; Kanakasabapathy, Sivananda

    2017-04-01

    With the increasing prevalence of complex device integration schemes, trilayer patterning with a solvent strippable hardmask can have a variety of applications. Spin-on metal hardmasks have been the key enabler for selective removal through wet strip when active areas need to be protected from dry etch damage. As spin-on metal hardmasks require a dedicated track to prevent metal contamination and are limited in their ability to scale down thickness without compromising on defectivity, there has been a need for a deposited hardmask solution. Modulation of film composition through deposition conditions enables a method to create TiO2 films with wet etch tunability. This paper presents a systematic study on development and characterization of plasma-enhanced atomic layer deposited (PEALD) TiO2-based hardmasks for patterning applications. We demonstrate lithographic process window, pattern profile, and defectivity evaluation for a trilayer scheme patterned with PEALD-based TiO2 hardmask and its performance under dry and wet strip conditions. Comparable structural and electrical performance is shown for a deposited versus a spin-on metal hardmask.

  5. Verification of thermo-fluidic CVD reactor model

    International Nuclear Information System (INIS)

    Lisik, Z; Turczynski, M; Ruta, L; Raj, E

    2014-01-01

    Presented paper describes the numerical model of CVD (Chemical Vapour Deposition) reactor created in ANSYS CFX, whose main purpose is the evaluation of numerical approaches used to modelling of heat and mass transfer inside the reactor chamber. Verification of the worked out CVD model has been conducted with measurements under various thermal, pressure and gas flow rate conditions. Good agreement between experimental and numerical results confirms correctness of the elaborated model.

  6. Ion beam figuring of CVD silicon carbide mirrors

    Science.gov (United States)

    Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

    2017-11-01

    Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

  7. CVD Diamond Sensors In Detectors For High Energy Physics

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00334150; Trischuk, William

    At the end of the next decade an upgrade of the Large Hadron Collider (LHC) to High Luminosity LHC (HL-LHC) is planned which requires the development of new radiation tolerant sensor technology. Diamond is an interesting material for use as a particle detector in high radiation environments. The large band gap ($5.47\\,\\text{eV}$) and the large displacement energy suggest that diamond is a radiation tolerant detector material. In this Thesis the capability of Chemical Vapor Deposition (CVD) diamond as such a sensor technology is investigated. The radiation damage constant for $800\\,\\text{MeV}$ protons is measured using single crystalline CVD (scCVD) and polycrystalline CVD (pCVD) diamonds irradiated to particle fluences up to $12 \\times 10^{15}\\,\\text{p/cm}^2$. In addition the signal response of a pCVD diamond detector after an irradiation to $12 \\times 10^{15}\\,\\text{p/cm}^2$ is investigated to determine if such a detector can be operated efficiently in the expected HL-LHC environment. By using electrodes em...

  8. Interlocked chiral/polar domain walls and large optical rotation in Ni3TeO6

    Directory of Open Access Journals (Sweden)

    Xueyun Wang

    2015-07-01

    Full Text Available Chirality, i.e., handedness, pervades much of modern science from elementary particles, DNA-based biology to molecular chemistry; however, most of the chirality-relevant materials have been based on complex molecules. Here, we report inorganic single-crystalline Ni3TeO6, forming in a corundum-related R3 structure with both chirality and polarity. These chiral Ni3TeO6 single crystals exhibit a large optical specific rotation (α—1355° dm−1 cm3 g−1. We demonstrate, for the first time, that in Ni3TeO6, chiral and polar domains form an intriguing domain pattern, resembling a radiation warning sign, which stems from interlocked chiral and polar domain walls through lowering of the wall energy.

  9. Development of composite membranes of PVA-TEOS doped KOH for alkaline membrane fuel cell

    International Nuclear Information System (INIS)

    Haryadi,; Sugianto, D.; Ristopan, E.

    2015-01-01

    Anion exchange membranes (AEMs) play an important role in separating fuel and oxygen (or air) in the Alkaline Membrane Fuel Cells. Preparation of hybrid organic inorganic materials of Polyvinylalcohol (PVA) - Tetraethylorthosilicate (TEOS) composite membrane doped KOH for direct alcohol alkaline fuel cell application has been investigated. The sol-gel method has been used to prepare the composite membrane of PVA-TEOS through crosslinking step and catalyzed by concentrated of hydrochloric acid. The gel solution was cast on the membrane plastic plate to obtain membrane sheets. The dry membranes were then doped by immersing in various concentrations of KOH solutions for about 4 hours. Investigations of the cross-linking process and the presence of hydroxyl group were conducted by FTIR as shown for frequency at about 1600 cm −1 and 3300 cm −1 respectively. The degree of swelling in ethanol decreased as the KOH concentration for membrane soaking process increased. The ion exchange capacity (IEC) of the membrane was 0.25meq/g. This composite membranes display significant ionic conductivity of 3.23 x 10 −2 S/cm in deionized water at room temperature. In addition, the morphology observation by scanning electron microscope (SEM) of the membrane indicates that soaking process of membrane in KOH increased thermal resistant

  10. Development of composite membranes of PVA-TEOS doped KOH for alkaline membrane fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Haryadi,, E-mail: haryadi@polban.ac.id; Sugianto, D.; Ristopan, E. [Department of Chemical Engineering, Politeknik Negeri Bandung Jl. Gegerkalong Hilir, Ds. Ciwaruga, Bandung West Java (Indonesia)

    2015-12-29

    Anion exchange membranes (AEMs) play an important role in separating fuel and oxygen (or air) in the Alkaline Membrane Fuel Cells. Preparation of hybrid organic inorganic materials of Polyvinylalcohol (PVA) - Tetraethylorthosilicate (TEOS) composite membrane doped KOH for direct alcohol alkaline fuel cell application has been investigated. The sol-gel method has been used to prepare the composite membrane of PVA-TEOS through crosslinking step and catalyzed by concentrated of hydrochloric acid. The gel solution was cast on the membrane plastic plate to obtain membrane sheets. The dry membranes were then doped by immersing in various concentrations of KOH solutions for about 4 hours. Investigations of the cross-linking process and the presence of hydroxyl group were conducted by FTIR as shown for frequency at about 1600 cm{sup −1} and 3300 cm{sup −1} respectively. The degree of swelling in ethanol decreased as the KOH concentration for membrane soaking process increased. The ion exchange capacity (IEC) of the membrane was 0.25meq/g. This composite membranes display significant ionic conductivity of 3.23 x 10{sup −2} S/cm in deionized water at room temperature. In addition, the morphology observation by scanning electron microscope (SEM) of the membrane indicates that soaking process of membrane in KOH increased thermal resistant.

  11. Development of composite membranes of PVA-TEOS doped KOH for alkaline membrane fuel cell

    Science.gov (United States)

    Haryadi, Sugianto, D.; Ristopan, E.

    2015-12-01

    Anion exchange membranes (AEMs) play an important role in separating fuel and oxygen (or air) in the Alkaline Membrane Fuel Cells. Preparation of hybrid organic inorganic materials of Polyvinylalcohol (PVA) - Tetraethylorthosilicate (TEOS) composite membrane doped KOH for direct alcohol alkaline fuel cell application has been investigated. The sol-gel method has been used to prepare the composite membrane of PVA-TEOS through crosslinking step and catalyzed by concentrated of hydrochloric acid. The gel solution was cast on the membrane plastic plate to obtain membrane sheets. The dry membranes were then doped by immersing in various concentrations of KOH solutions for about 4 hours. Investigations of the cross-linking process and the presence of hydroxyl group were conducted by FTIR as shown for frequency at about 1600 cm-1 and 3300 cm-1 respectively. The degree of swelling in ethanol decreased as the KOH concentration for membrane soaking process increased. The ion exchange capacity (IEC) of the membrane was 0.25meq/g. This composite membranes display significant ionic conductivity of 3.23 x 10-2 S/cm in deionized water at room temperature. In addition, the morphology observation by scanning electron microscope (SEM) of the membrane indicates that soaking process of membrane in KOH increased thermal resistant.

  12. Large optical second-order nonlinearity of poled WO3-TeO2 glass.

    Science.gov (United States)

    Tanaka, K; Narazaki, A; Hirao, K

    2000-02-15

    Second-harmonic generation, one of the second-order nonlinear optical properties of thermally and electrically poled WO>(3)-TeO>(2) glasses, has been examined. We poled glass samples with two thicknesses (0.60 and 0.86 mm) at various temperatures to explore the effects of external electric field strength and poling temperature on second-order nonlinearity. The dependence of second-harmonic intensity on the poling temperature is maximum at a specific poling temperature. A second-order nonlinear susceptibility of 2.1 pm/V was attained for the 0.60-mm-thick glass poled at 250 degrees C. This value is fairly large compared with those for poled silica and tellurite glasses reported thus far. We speculate that the large third-order nonlinear susceptibility of WO>(3)- TeO>(2) glasses gives rise to the large second-order nonlinearity by means of a X((2)) = 3X((3)) E(dc) process.

  13. Particle Sampling and Real Time Size Distribution Measurement in H2/O2/TEOS Diffusion Flame

    International Nuclear Information System (INIS)

    Ahn, K.H.; Jung, C.H.; Choi, M.; Lee, J.S.

    2001-01-01

    Growth characteristics of silica particles have been studied experimentally using in situ particle sampling technique from H 2 /O 2 /Tetraethylorthosilicate (TEOS) diffusion flame with carefully devised sampling probe. The particle morphology and the size comparisons are made between the particles sampled by the local thermophoretic method from the inside of the flame and by the electrostatic collector sampling method after the dilution sampling probe. The Transmission Electron Microscope (TEM) image processed data of these two sampling techniques are compared with Scanning Mobility Particle Sizer (SMPS) measurement. TEM image analysis of two sampling methods showed a good agreement with SMPS measurement. The effects of flame conditions and TEOS flow rates on silica particle size distributions are also investigated using the new particle dilution sampling probe. It is found that the particle size distribution characteristics and morphology are mostly governed by the coagulation process and sintering process in the flame. As the flame temperature increases, the effect of coalescence or sintering becomes an important particle growth mechanism which reduces the coagulation process. However, if the flame temperature is not high enough to sinter the aggregated particles then the coagulation process is a dominant particle growth mechanism. In a certain flame condition a secondary particle formation is observed which results in a bimodal particle size distribution

  14. Flebotomíneos de Timóteo, Estado de Minas Gerais, Brasil (Diptera: Psychodidae Sand flies in Timóteo, Minas Gerais, Brazil (Diptera: Psychodidae

    Directory of Open Access Journals (Sweden)

    José Dilermando Andrade Filho

    1997-10-01

    Full Text Available Casos esporádicos de leishmaniose tegumentar têm ocorrido no Município de Timóteo, Minas Gerais, basicamente na população rural. Para conhecer a fauna de flebotomíneos da região, foram instaladas sete armadilhas luminosas de New Jersey na cidade, em sete diferentes bairros. As coletas foram realizadas no período de junho a outubro de 1994, dezembro de 1994 e janeiro a março de 1995, com um total de 3.240 horas por armadilha. Foram capturados 4.396 flebotomíneos, distribuídos em dois gêneros e vinte espécies: Brumptomyia cunhai, Brumptomyia nitzulescui, Lutzomyia (Nyssomyia whitmani, Lutzomyia (Nyssomyia intermedia, Lutzomyia quinquefer, Lutzomyia lenti, Lutzomyia (Pintomyia fischeri, Lutzomyia migonei, Lutzomyia sallesi, Lutzomyia termitophila, Lutzomyia aragaoi, Lutzomyia borgmeieri, Lutzomyia (Psathyromyia lutziana, Lutzomyia (Sciopemyia sordellii, Lutzomyia (Pintomyia pessoai, Lutzomyia (Trichopygomyia longispina, Lutzomyia misionensis, Lutzomyia (Psychodopygus davisi, Lutzomyia lanei, Lutzomyia (Pressatia sp. A espécie L. (N. whitmani foi a mais freqüente com 52,12%, seguida de L. (N. intermedia com 34,10%, e ambas podem estar participando da transmissão de leishmaniose cutânea na região.Sporadic cases of tegumentary leishmaniasis have occurred in Timóteo, Minas Gerais State, basically among the rural population. In order to study the region's sand fly population, New Jersey light traps were set in seven different neighborhoods. Specimens were gathered from June through October 1994, December 1994, and January through March 1995, with a total of 3,240 hours per trap. A total of 4,396 sand flies were captured, distributed among two genera and twenty species: Brumptomyia cunhai, Brumptomyia nitzulescui, Lutzomyia (Nyssomyia whitmani, Lutzomyia (Nyssomyia intermedia, Lutzomyia quinquefer, Lutzomyia lenti, Lutzomyia (Pintomyia fischeri, Lutzomyia migonei, Lutzomyia sallesi, Lutzomyia termitophila, Lutzomyia aragaoi, Lutzomyia

  15. Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

    2015-09-15

    A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

  16. Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

    Czech Academy of Sciences Publication Activity Database

    Schäfer, J.; Fricke, K.; Mika, Filip; Pokorná, Zuzana; Zajíčková, L.; Foest, R.

    2017-01-01

    Roč. 630, MAY 30 (2017), s. 71-78 ISSN 0040-6090 R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : plasma jet * liquid assisted plasma enhanced chemical * vapour deposition * silicon oxide Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Coating and films Impact factor: 1.879, year: 2016

  17. Low-temperature graphene synthesis using microwave plasma CVD

    International Nuclear Information System (INIS)

    Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

    2013-01-01

    The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 10 5 Ω/sq.

  18. Low-temperature graphene synthesis using microwave plasma CVD

    Science.gov (United States)

    Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

    2013-02-01

    The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 105 Ω/sq.

  19. Evaluation of CVD silicon carbide for synchrotron radiation mirrors

    International Nuclear Information System (INIS)

    Takacs, P.Z.

    1981-07-01

    Chemical vapor deposited silicon carbide (CVD SiC) is a recent addition to the list of materials suitable for use in the harsh environment of synchrotron radiation (SR) beam lines. SR mirrors for use at normal incidence must be ultrahigh vacuum compatible, must withstand intense x-ray irradiation without surface damage, must be capable of being polished to an extremely smooth surface finish, and must maintain surface figure under thermal loading. CVD SiC exceeds the performance of conventional optical materials in all these areas. It is, however, a relatively new optical material. Few manufacturers have experience in producing optical quality material, and few opticians have experience in figuring and polishing the material. The CVD material occurs in a variety of forms, sensitively dependent upon reaction chamber production conditions. We are evaluating samples of CVD SiC obtained commercially from various manufacturers, representing a range of deposition conditions, to determine which types of CVD material are most suitable for superpolishing. At the time of this writing, samples are being polished by several commercial vendors and surface finish characteristics are being evaluated by various analytical methods

  20. Test of radiation hardness of pcCVD detectors

    Energy Technology Data Exchange (ETDEWEB)

    Schlemme, Steffen [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Enders, Joachim [Technische Universitaet Darmstadt (Germany); Figuera, P.; Salamone, S. [LNS-INFN Catania (Italy); Fruehauf, J.; Kis, Mladen; Kratz, A.; Kurz, N.; Loechner, S.; Nociforo, Chiara; Schirru, Fabio; Szczepanczyk, B.; Traeger, M.; Visinka, R. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Musumarra, A. [LNS-INFN Catania (Italy); University of Catania (Italy)

    2016-07-01

    The new in-flight separator Super-FRS is under construction at the Facility for Antiproton and Ion Research (FAIR, Darmstadt). Ion rates up to 3 x 10{sup 11} {sup 238}U/spill demand an adaption of detectors to a high radiation environment. A test experiment to investigate the radiation hardness of polycrystalline diamond detectors (pcCVD) was performed at the LNS-INFN in Catania using a {sup 12}C beam at 62 MeV/u and intensities of up to 1.5 pnA. The setup consisted of pcCVD strip detectors to measure the beam profile, a single crystal diamond detector to calibrate the ionisation chamber working in current mode as a beam intensity monitor and a pcCVD sample to be irradiated. The IC used was designed for FAIR and showed a stable counting rate allowing us to calibrate and perform beam intensity measurements with it. The total measured counts on the sample were 8.25 x 10{sup 11} counts/mm{sup 2} over a period of 60 hours. Digital waveforms of the pcCVD signals were taken with an oscilloscope and analysed. The results showed no change of the pcCVD signal properties during the entire irradiation.

  1. Structural studies of WO3-TeO2 glasses by high-Q-neutron diffraction and Raman spectroscopy

    International Nuclear Information System (INIS)

    Khanna, A.; Kaur, A.; Krishna, P.S.R.; Shinde, A.B.

    2013-01-01

    Glasses from the system: xWO 3 -(100-x)TeO 2 (x=15, 20 and 25 mol %) were prepared by melt quenching technique and characterized by density, UV-visible absorption spectroscopy, Differential Scanning Calorimetry (DSC), Raman spectroscopy and high-Q neutron diffraction measurements. Glass density and glass transition temperature increased with increase in WO 3 concentration, Raman spectroscopy indicated the conversion of TeO 4 units into TeO 3 units with increase in WO 3 content. The increase in glass transition temperature with the incorporation of WO 3 was attributed to the increase in average bond strength of the glass network since the bond dissociation energy of W-O bonds (672 kJ/mol) is significantly higher than that of Te-O bonds (376 kJ/mol). UV-visible studies found a very strong optical absorption band due to W 6+ ions, just below the absorption edge. High-Q neutron diffraction measurements were performed on glasses and radial distribution function analyses revealed changes in W-O and Te-O correlations in the glass network. The findings about changes in glass structure from neutron diffraction studies were consistent with structural information obtained from Raman spectroscopy and structure-property correlations were made. (author)

  2. Dielectric properties of the ternary TeO2/Nb2O5/ZnO glasses

    International Nuclear Information System (INIS)

    Ahmad, Mohamad M.; Yousef, El Sayed; Moustafa, El Sayed

    2006-01-01

    Glasses of the system TeO 2 /Nb 2 O 5 /ZnO containing different concentration of ZnO (ranging from 5 to 20 mol%) were prepared. The dielectric properties over wide ranges of frequencies and temperatures were investigated as a function of ZnO content by impedance spectroscopy measurements. The impedance spectra of the present glasses were modeled by appropriate equivalent circuit. The dielectric constant has a value of 66 for the 85TeO 2 /10Nb 2 O 5 /5ZnO glass, which is three times larger than that of pure TeO 2 glass and other binary, e.g. TeO 2 /ZnCl 2 , tellurite glassy systems. The results have been analyzed in light of varying NbO 6 octahedra and NbO 4 tetrahedra of niobium oxide as zinc oxide varies from 5 to 20 mol%. The relaxation properties of the investigated glasses are presented in the electric modulus formalism, where the relaxation time and the respective activation energy are determined

  3. Evaluation of TeO2 content on the optical and spectroscopic properties of Yb3 +-doped calcium borotellurite glasses

    Science.gov (United States)

    Lima, A. M. O.; Gomes, J. F.; Hegeto, F. L.; Medina, A. N.; Steimacher, A.; Barboza, M. J.

    2018-03-01

    This paper reports the synthesis and the characterization of Yb3 +-doped calcium borotellurite (CaBTeX) glasses with composition 10CaF2-(29.5 - 0.4x)CaO-(60 - 0.6x)B2O3-xTeO2-0.5Yb2O3 (x = 10, 16, 22, 31 and 54 mol%). The results of XRD confirm the amorphous character of all the samples. The density, molar volume, refractive index and electronic polarizability values show an increase with TeO2 content. Otherwise, the optical band gap energy shows a decrease with the increase of TeO2 content. The replacement of CaO and B2O3 by TeO2 changes the glass structure, which decreases the excited Yb3 +/cm3 and, consequently, the luminescence intensity. The temperature dependence of luminescence was studied for all the samples up to 420 K. The fluorescence lifetime does not change significantly due to TeO2 addition. In addition, absorption and emission cross section were calculated and present high values as compared to other tellurite and phosphate glasses.

  4. Adhesion of non-selective CVD tungsten to silicon dioxide

    International Nuclear Information System (INIS)

    Woodruff, D.W.; Wilson, R.H.; Sanchez-Martinez, R.A.

    1986-01-01

    Adhesion of non-selective, CVD tungsten to silicon dioxide is a critical issue in the development of tungsten as a metalization for VLSI circuitry. Without special adhesion promoters, tungsten deposited from WF/sub 6/ and H/sub 2/ has typically failed a standard tape test over all types of silicon oxides and nitrides. The reasons for failure of thin films, and CVD tungsten in particular are explored along with standard techniques for improving adhesion of thin films. Experiments are reported which include a number of sputtered metals as adhesion promoters, as well as chemical and plasma treatment of the oxide surface. Sputtered molybdenum is clearly the superior adhesion promoting layer from these tests. Traditional adhesion layers such as chromium or titanium failed as adhesion layers for CVD tungsten possibly due to chemical reactions between the WF/sub 6/ and Cr or Ti

  5. The formation of tritium permeation barriers by CVD

    International Nuclear Information System (INIS)

    Forcey, K.S.; Perujo, A.; Reiter, F.; Lolli-Ceroni, P.L.

    1993-01-01

    The effectiveness as permeation barriers of the following CVD coatings have been investigated: TiC (1 to 2 μm in thickness); a bi-layer of TiN on TiC (3 μm total thickness) and CVD Al 2 O 3 on a TiN/TiC bi-layer. The substrate materials were TZM (a Mo alloy) and 316L stainless steel in the form of discs of diameter 48 mm and thickness 0.1 or 1 mm. Permeation measurements were performed in the temperature range 515-742 K using deuterium at pressures in the range 1-50 kPa. CVD layers were shown to form reasonably effective permeation barriers. At a temperature of 673 K TiC is around 6000 times less permeable to deuterium than 316L stainless steel. (orig.)

  6. Study of the tellurite-rich composition range in the Bi2O3-TeO2 system

    International Nuclear Information System (INIS)

    Ghazaryan, A.A.

    2015-01-01

    The TeO 2 and Bi 2 O 3 based glasses and glass ceramics are widely used for various technical needs. However, information about the phase diagram of the Bi 2 O 3 -TeO 2 system is limited, and the existing data are inconsistent. According to Demina L.A. with co-authors the Bi 2 Te 4 O 1 1 compound has a congruent melting at 662°C and forms two eutectics with neighbors. In another case, according to the Schmidt P. with co-authors, it melts incongruently at 645°C without indication of Liquidus temperature. It was the motivation for the Bi 2 Te 4 O 1 1 melting behavior investigation and the binary Bi 2 O 3 -TeO 2 system phase diagram correction in the TeO 2 rich area of compositions. As initial materials the glass and solid state sintered samples were used for these purposes. The differential thermal and X-ray analyses were used for glassy and crystallized products identification. The exothermic effect with maximum at 420°C and two endothermal effects with minimum at 635°C and 720 Degree C are clearly observed on the DTA curve of the 80 TeO 2 -20 Bi 2 O 3 (mol.percent) glass composition corresponding to the Bi 2 Te 4 O 1 1 compound. The product of Bi 2 Te 4 O 1 1 glass powder crystallization at 420°C is the Bi 2 Te 4 O 1 1 compound with melting point of 635 ± 5°C. The second endothermic effect on the DTA curve in the range of temperature 680-765°C with minimum at 720°C, is associated with dissolution of TeO 2 in the melt, formed as result of the Bi 2 Te 4 O 1 1 incongruent melting. The existence of eutectic E 1 (87 mol.percent TeO 2 ) between Bi 2 Te 4 O 1 1 and TeO 2 with a melting point of 580 ±5°C has been confirmed. Incongruent melting promotes the peritectic P 1 (81 mol.percent TeO 2 ) formation between Bi 2 Te 4 O 1 1 and eutectic E 1 (87 mol.percent TeO 2 ) with a melting point of 635±5°C. Three endothermic effects at 560 °C, 635 °C and 720°C have been observed on the DTA curve of Bi 2 Te 4 O 1 1 compound, obtained by solid state synthesis. Last

  7. Correlation of CVD Diamond Electron Emission with Film Properties

    Science.gov (United States)

    Bozeman, S. P.; Baumann, P. K.; Ward, B. L.; Nemanich, R. J.; Dreifus, D. L.

    1996-03-01

    Electron field emission from metals is affected by surface morphology and the properties of any dielectric coating. Recent results have demonstrated low field electron emission from p-type diamond, and photoemission measurements have identified surface treatments that result in a negative electron affinity (NEA). In this study, the field emission from diamond is correlated with surface treatment, surface roughness, and film properties (doping and defects). Electron emission measurements are reported on diamond films synthesized by plasma CVD. Ultraviolet photoemission spectroscopy indicates that the CVD films exhibit a NEA after exposure to hydrogen plasma. Field emission current-voltage measurements indicate "threshold voltages" ranging from approximately 20 to 100 V/micron.

  8. Radiation tolerance of CVD diamond detectors for pions and protons

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F. E-mail: f.hartjes@nikhef.nl; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M

    2002-01-11

    The paper gives new results on the radiation tolerance of CVD diamond for irradiation with 300 MeV/c pions and 24 GeV/c protons. The measured charge signal spectrum is compared at several irradiation levels with the spectrum calculated by a model. Irradiation by particles causes damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model show that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal.

  9. Radiation tolerance of CVD diamond detectors for pions and protons

    Science.gov (United States)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

    2002-01-01

    The paper gives new results on the radiation tolerance of CVD diamond for irradiation with 300 MeV/ c pions and 24 GeV/ c protons. The measured charge signal spectrum is compared at several irradiation levels with the spectrum calculated by a model. Irradiation by particles causes damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model show that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal.

  10. Application of Cat-CVD for ULSI technology

    International Nuclear Information System (INIS)

    Akasaka, Yoichi

    2008-01-01

    The ULSI technology has been following Moore's law into the sub-100 nm era, although several challenging technical issues must be resolved. This paper describes possible application of Cat-CVD for ULSI technology beyond the 45 nm node. Especially, Cat-CVD SiN film for a transistor gate sidewall and/or a pre-metallic liner layer, and removal of photo resist (ash) by Cat-induced hydrogen atoms in the interconnect structure with an extreme low-k material are mainly discussed

  11. Radiation tolerance of CVD diamond detectors for pions and protons

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

    2002-01-01

    The paper gives new results on the radiation tolerance of CVD diamond for irradiation with 300 MeV/c pions and 24 GeV/c protons. The measured charge signal spectrum is compared at several irradiation levels with the spectrum calculated by a model. Irradiation by particles causes damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model show that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal

  12. Lattice anomalies and magnetic excitations of the spin web compound Cu3TeO6

    International Nuclear Information System (INIS)

    Choi, K Y; Lemmens, P; Choi, E S; Berger, H

    2008-01-01

    We report on the magnetic susceptibility and Raman scattering measurements of the S = 1/2 three-dimensional (3D) spin web compound Cu 3 TeO 6 . The magnetic susceptibility shows an antiferromagnetic ordering at T N ∼61 K and a deviation from the Curie-Weiss law around 150 K. Raman spectra show the emergence of a new mode at 132 cm -1 for temperatures below T*∼50 K (∼0.8 T N ). At the same temperature, phonon anomalies in intensity and frequency show up. This gives evidence of pronounced magneto-elastic effects. In addition, we observe a two-magnon Raman spectrum around 214 cm -1 . Compared to typical 3D spin systems, its robust temperature dependence suggests that a frustrated spin topology with a reduced spin coordination number also enhances spin-phonon couplings.

  13. A Quantitative Method for Localizing User Interface Problems: The D-TEO Method

    Directory of Open Access Journals (Sweden)

    Juha Lamminen

    2009-01-01

    Full Text Available A large array of evaluation methods have been proposed to identify Website usability problems. In log-based evaluation, information about the performance of users is collected and stored into log files, and used to find problems and deficiencies in Web page designs. Most methods require the programming and modeling of large task models, which are cumbersome processes for evaluators. Also, because much statistical data is collected onto log files, recognizing which Web pages require deeper usability analysis is difficult. This paper suggests a novel quantitative method, called the D-TEO, for locating problematic Web pages. This semiautomated method explores the decomposition of interaction tasks of directed information search into elementary operations, deploying two quantitative usability criteria, search success and search time, to reveal how a user navigates within a web of hypertext.

  14. Structure and properties of TeO2-WO3 system glasses

    International Nuclear Information System (INIS)

    Kolobkov, V.P.; Ovcharenko, N.V.; Morozova, I.N.; Chebotarev, S.A.; Chikovskij, A.N.; Arkatova, T.G.

    1987-01-01

    Study of TeO 2 -WO 3 system is of interest for production of high-refractive-glasses with comparatively low crystallizability. Results of investigating some properties and structural features of this system glasses are presented. Composition and properties of studied glasses are presented. The properties were studied using the following techniques: the density was measured by hydrostatic weighing in toluene; thermal expansion coefficient was measured in quartz dilatometer DKV-5A; dilatometric temperature of glass softening (T g ) was defined as an intersection point of linear and curved parts of the plot of thermal expansion coefficient; refractive index (RI) - by immersion method; dielectric properties are measured. Consideration of vibronic spectra permits to conclude that in tungsten-tellurium glasses rare earth activator ions are arranged near tellurite and tungstate groupings proportional to glass-forming component content

  15. The electronic spectra of FeH and TeO2

    International Nuclear Information System (INIS)

    Hullah, D.F.

    1999-01-01

    A thesis submitted for the degree of Doctor of Philosophy at the University of Oxford. Daniel Fearnley Hullah, Jesus College, Trinity Term 1999. This thesis is presented in two parts. The subject of Part One is the recording and analysis of part of the electronic spectrum of the iron monohydride, FeH, at visible wavelengths with Doppler-limited resolution. The subject of Part Two is the recording and analysis of the electronic spectrum of tellurium dioxide, TeO 2 , at near ultra-violet wavelengths under free jet expansion conditions. PART ONE: The fourth sub-bands of the e 6 Π-c 6 Σ + and e 6 Π-a 6 Δ transitions of FeH were recorded using both direct laser induced fluorescence and dispersed laser induced fluorescence. A total of sixteen lines were assigned to the e 6 Π 1/2 -c 6 Σ + -1/2 transition and fourteen lines were assigned to the e 6 Π 1/2 -a 6 Δ 3/2 transition. This allowed the e 6 Π 1/2 spin-orbit component to be characterised for J levels from 1/2 to 7/2 and the a 6 Δ 3/2 spin-orbit component to be characterised for J levels from 3/2 to 9/2. The first sub-band of the e 6 Π-a 6 Δ transition was extended following analysis of the high temperature spectrum of McCormack and O'Connor (recorded in 1976). Dispersed fluorescence spectra of the first four sub-bands of the e 6 Π-a 6 Δ transition were recorded. Following analysis, transitions at ∼ 600 nm were recorded using direct laser induced fluorescence. These were assigned to transitions from the first three spin-orbit components of a new sextet electronic state, b 6 Π (e 6 Π-b 6 Π), one spin orbit component of a new quartet state, C 4 Φ 7/2 , (e 6 Π 5/2 -C 4 Φ 7/2 ), and the previously observed X 4 Δ 7/2 υ = 2 state (e 6 Π 7/2 -X 4 Δ 7/2 υ = 2). PART TWO: The electronic spectrum of TeO 2 was recorded between 345 and 406 nm using a pulsed dye laser. TeO 2 (g) was produced by heating TeO 2(s) to 850 deg. C and entraining the vapour in argon and expanding the gases in a continuous free

  16. The hydrophobic and omnidirectional antireflection coating of SiO2 nanospheres with C18-TEOS

    Science.gov (United States)

    Hsu, Cheng-Chih; Lan, Wen-Lin; Chen, Nien-Po; Wu, Chyan-Chyi

    2014-06-01

    This paper demonstrates the antireflection coating of SiO2 nanospheres applied to cover glass by using the optimal spin-coating method. Because of the hydrolysis and condensation reactions between the SiO2 nanosphere antireflection (AR) coating and n-octadecyltriethoxysilane solution (C18-TEOS), the contact angle of the AR coating with hydrophobic treatment is improved approximately 38%, and the moisture-resistance remains unchanged, which preserved similar transmittance for six weeks. Furthermore, the AR coating with hydrophobic treatment exhibits approximately 3% and 7% improvement in the transmittance at normal and oblique incidence, respectively. The hydrophobic and omnidirectional AR coating with nanoscale SiO2 particles can be fabricated using the proposed simple and economical method.

  17. Photovoltaic effect in Bi2TeO5 photorefractive crystal

    International Nuclear Information System (INIS)

    Oliveira, Ivan de; Capovilla, Danilo Augusto; Carvalho, Jesiel F.; Montenegro, Renata; Fabris, Zanine V.; Frejlich, Jaime

    2015-01-01

    We report on the presence of a strong photovoltaic effect on nominally undoped photorefractive Bi 2 TeO 5 crystals and estimated their Glass photovoltaic constant and photovoltaic field for λ = 532 nm illumination. We directly measured the photovoltaic-based photocurrent in this material under λ = 532 nm wavelength laser light illumination and compared its behavior with that of a well known photovoltaic Fe-doped Lithium Niobate crystal. We also show the photovoltaic current to strongly depend on the polarization direction of light. Holographic diffraction efficiency oscillation during recording and the behavior of fringe-locked running holograms in self-stabilized experiments are also demonstrated here as additional indirect proofs of the photovoltaic nature of this material

  18. Electric behavior of functional glasses based on TeO2

    International Nuclear Information System (INIS)

    Terny, S.; Rubia, M. a. de la; Barolin, S.; Alonso, R. E.; Frutos, J. de; Frechero, M. A.

    2014-01-01

    In this paper we study the structural and electrical behavior of glass-ceramic material of general formula: xMgO (1-x) (0.5V 2 O 5 .0.5MoO 3 )2TeO 2 (0≤ x≤0.9) through measurements of density, molar volume, oxygen packing density (OPD), differential scanning calorimetry (DSC) and Raman spectroscopy: electric behavior was studied by impedance spectroscopy. We found that magnesium cation induces the growth of slightly crystallized areas inside the material. Those nanocrystallizations were detected to a greater extent by atomic force microscopy (AFM) and in lesser extent by X-ray diffraction (XRD). Regarding the electrical measurements, it can be established that magnesium cation does not act as good ionic conductor in this material. (Author)

  19. Sand flies in Timóteo, Minas Gerais, Brazil (Diptera: Psychodidae)

    OpenAIRE

    Andrade Filho, José Dilermando; Carneiro, Ana Paula Salgado; Lima, Mauro Lucio Nascimento; Santiago, Rodrigo Martins; Gama, Marco Antônio; Santos, Carlos Alberto; Falcão, Alda Lima; Brazil, Reginaldo Peçanha

    1997-01-01

    Casos esporádicos de leishmaniose tegumentar têm ocorrido no Município de Timóteo, Minas Gerais, basicamente na população rural. Para conhecer a fauna de flebotomíneos da região, foram instaladas sete armadilhas luminosas de New Jersey na cidade, em sete diferentes bairros. As coletas foram realizadas no período de junho a outubro de 1994, dezembro de 1994 e janeiro a março de 1995, com um total de 3.240 horas por armadilha. Foram capturados 4.396 flebotomíneos, distribuídos em dois gêneros e...

  20. Obtention, sintering and operational tests of the obtention prototype TeO2 for the production of 131 I

    International Nuclear Information System (INIS)

    Alanis M, J.

    1997-12-01

    The demand that exists in Mexico of developing production techniques of applicable radiopharmaceuticals in nuclear medicine, it forces to the National Institute of Nuclear Research to develop the obtaining process of 131 I by dry via starting from TeO 2 . The obtaining process of 131 I, it begins with the synthesis of the TeO 2 like matter prevails, starting from the oxidation of Te-elementary one, inside HNO 3 . Later on the TeO 2 , passes to the sintering process in ingots form, in that way it is encapsulated in aluminum, to be irradiated under optimal parameters of irradiation in the nuclear reactor. The irradiated TeO 2 , it passes to the stage of distillation of 131 I, in a distillation equipment of 131 I by dry via starting from TeO 2 . The process equipment consists mainly of three parts: a) the system of distillation control, built of steel, aluminum, bronze and brass, among other, b) distillation system, built of glass pyrex and of quartz, in this system is where the chemical and nuclear reactions take place for the obtaining of 131 I and c) electric system, is the one in charge of the electric energy supply for the process oven, ventilation system and vacuum system. The results of experimental tests, check the effectiveness of the production process of 131 I in the ININ in routine form (industrial), however it is indispensable to optimize the physical, chemical and nuclear parameters that intervene in each stage of the process with the purpose to obtaining the maximum yield, purity, quality and radiological control and economic production costs. (Author)

  1. Comportamiento eléctrico de vidrios funcionales con base en TeO2

    Directory of Open Access Journals (Sweden)

    Terny, S.

    2014-02-01

    Full Text Available In this paper we study the structural and electrical behavior of glass-ceramic material of general formula: xMgO (1-x (0.5V2O5.0.5MoO32TeO2 (0≤x≤0.9 through measurements of density, molar volume, oxygen packing density (OPD, differential scanning calorimetry (DSC and Raman spectroscopy: electric behavior was studied by impedance spectroscopy. We found that magnesium cation induces the growth of slightly crystallized areas inside the material. Those nanocrystallizations were detected to a greater extent by atomic force microscopy (AFM and in lesser extent by X-ray diffraction (XRD. Regarding the electrical measurements, it can be established that magnesium cation does not act as good ionic conductor in this material.En este trabajo estudiamos la estructura de un material vítreo cuya fórmula general es: xMgO(1-x(0.5V2O5.0.5MoO32TeO2 (0≤x≤0.9, mediante medidas de densidad, volumen molar, empaquetamiento denso de oxigeno (OPD, calorimetría diferencial de barrido (DSC y espectroscopia Raman; el comportamiento eléctrico se estudió por medio de espectroscopia de impedancia. Encontramos que el catión magnesio induce el crecimiento de zonas levemente cristalizadas dentro del material. Dichas nanocristalizaciones pudieron ser detectadas en mayor medida por microscopia de fuerzas atómicas (AFM y en menor medida se pudo observar en los patrones de difracción de Rayos X (DRX. Con respecto a las propiedades eléctricas, se puede establecer que el catión magnesio no actúa como buen conductor iónico en este material.

  2. Cd3(MoO4)(TeO3)2: A Polar 3D Compound Containing d10-d0 SCALP-Effect Cations.

    Science.gov (United States)

    Feng, Yuquan; Fan, Huitao; Zhong, Zhiguo; Wang, Hongwei; Qiu, Dongfang

    2016-11-21

    The new polar 3D cadmium molybdotellurite Cd 3 (MoO 4 )(TeO 3 ) 2 was obtained by means of a high-temperature solid-state method. Cd 3 (MoO 4 )(TeO 3 ) 2 is a monoclinic crystal system, and it exhibits the polar space group P2 1 (No. 4). The structure of Cd 3 (MoO 4 )(TeO 3 ) 2 can be viewed as a complicated 3D architecture that is composed of distorted CdO n (n = 6, 7) polyhedra, TeO 3 trigonal pyramids, and MoO 4 polyhedra. The compound features the first 3D NCS cadmium molybdotellurite with 1D 4- and 6-MR channels and a polar structure originating from the TeO 3 groups, MoO 4 groups, and displacements of d 10 Cd 2+ cations. The results were further confirmed by calculations of the net polarization. The UV-vis spectrum and thermal properties indicate that Cd 3 (MoO 4 )(TeO 3 ) 2 exhibits a broad transparent region and excellent thermal stability. SHG tests of Cd 3 (MoO 4 )(TeO 3 ) 2 revealed that its response is approximately the same as that of KH 2 PO 4 at the same grain size between 105 and 150 μm and that it is phase-matchable.

  3. CVD-graphene for low equivalent series resistance in rGO/CVD-graphene/Ni-based supercapacitors

    Science.gov (United States)

    Kwon, Young Hwi; Kumar, Sunil; Bae, Joonho; Seo, Yongho

    2018-05-01

    Reduced equivalent series resistance (ESR) is necessary, particularly at a high current density, for high performance supercapacitors, and the interface resistance between the current collector and electrode material is one of the main components of ESR. In this report, we have optimized chemical vapor deposition-grown graphene (CVD-G) on a current collector (Ni-foil) using reduced graphene oxide as an active electrode material to fabricate an electric double layer capacitor with reduced ESR. The CVD-G was grown at different cooling rates—20 °C min‑1, 40 °C min‑1 and 100 °C min‑1—to determine the optimum conditions. The lowest ESR, 0.38 Ω, was obtained for a cell with a 100 °C min‑1 cooling rate, while the sample without a CVD-G interlayer exhibited 0.80 Ω. The CVD-G interlayer-based supercapacitors exhibited fast CD characteristics with high scan rates up to 10 Vs‑1 due to low ESR. The specific capacitances deposited with CVD-G were in the range of 145.6 F g‑1–213.8 F g‑1 at a voltage scan rate of 0.05 V s‑1. A quasi-rectangular behavior was observed in the cyclic voltammetry curves, even at very high scan rates of 50 and 100 V s‑1, for the cell with optimized CVD-G at higher cooling rates, i.e. 100 °C min‑1.

  4. Electrical mobility of silver ion in Ag2O-B2O3-P2O5-TeO2 glasses.

    Science.gov (United States)

    Sklepić, Kristina; Vorokhta, Maryna; Mošner, Petr; Koudelka, Ladislav; Moguš-Milanković, Andrea

    2014-10-16

    The effect of adding TeO(2) into (100 - x)[0.5Ag(2)O - 0.1B(2)O(3) - 0.4P(2)O(5)] - xTeO(2), with 0-80 mol % TeO(2) glass, on the structural changes and electrical properties has been investigated. DSC and thermodilatomery were used to study their thermal behavior, structure was studied by Raman spectroscopy, and electrical properties have been studied by impedance spectroscopy over a wide temperature and frequency range. The introduction of TeO(2) as a third glass former to the glass network causes the structural transformation from TeO(3) (tp) to TeO(4) (tbp) which contributes to the changes in conductivity. The glasses with low TeO(2) content show only a slow decrease in dc conductivity with addition of TeO(2) due to the increase of the number of nonbridging oxygens, which increases the mobility of Ag(+) ions. The steep decrease in conductivity for glasses containing more than 40 mol % TeO(2) is a result of decrease of the Ag(2)O content and stronger cross-linkage in glass network through the formation of more Te-(eq)O(ax)-Te bonds in TeO(4) tbp units. The glasses obey ac conductivity scaling with respect to temperature, implying that the dynamic process is not temperature dependent. On the other hand, the scaling of the spectra for different glass compositions showed the deviations from the Summerfield scaling because of the local structural disorder which occurs as a result of the structural modifications in the tellurite glass network.

  5. Modelling and analysis of CVD processes for ceramic membrane preparation

    NARCIS (Netherlands)

    Brinkman, H.W.; Cao, G.Z.; Meijerink, J.; de Vries, Karel Jan; Burggraaf, Anthonie

    1993-01-01

    A mathematical model is presented that describes the modified chemical vapour deposition (CVD) process (which takes place in advance of the electrochemical vapour deposition (EVD) process) to deposit ZrO2 inside porous media for the preparation and modification of ceramic membranes. The isobaric

  6. LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition

    Czech Academy of Sciences Publication Activity Database

    Stuchlík, Jiří; Ledinský, Martin; Honda, Shinya; Drbohlav, Ivo; Mates, Tomáš; Fejfar, Antonín; Hruška, Karel; Stuchlíková, The-Ha; Kočka, Jan

    2009-01-01

    Roč. 517, č. 24 (2009), s. 6829-6832 ISSN 0040-6090 R&D Projects: GA AV ČR KAN400100701; GA ČR(CZ) GD202/05/H003; GA MŠk LC510; GA AV ČR IAA1010413 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous hydrogenated silicon * atomic force microscopy * plasma-enhanced chemical vapour deposition, * nucleation * Raman scattering * lithium fluoride Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.727, year: 2009

  7. CVD polycrystalline diamond. A novel neutron detector and applications

    International Nuclear Information System (INIS)

    Mongkolnavin, R.

    1998-01-01

    Chemical Vapour Deposition (CVD) Polycrystalline Diamond film has been investigated as a low noise sensor for beta particles, gammas and neutrons using High Energy Physics technologies. Its advantages and disadvantages have been explored in comparison with other particle detectors such as silicon detector and other plastic scintillators. The performance and characteristic of the diamond detector have been fully studied and discussed. These studies will lead to a better understanding of how CVD diamonds perform as a detector and how to improve their performance under various conditions. A CVD diamond detector model has been proposed which is an attempt to explain the behaviour of such an extreme detector material. A novel neutron detector is introduced as a result of these studies. A good thermal and fast neutron detector can be fabricated with CVD diamond with new topologies. This detector will perform well without degradation in a high neutron radiation environment, as diamond is known to be radiation hard. It also offers better neutrons and gammas discrimination for high gamma background applications compared to other semiconductor detectors. A full simulation of the detector has also been done using GEANT, a Monte-Carlo simulation program for particle detectors. Simulation results show that CVD diamond detectors with this novel topology can detect neutrons with great directionality. Experimental work has been done on this detector in a nuclear reactor environment and accelerator source. A novel neutron source which offers a fast pulse high-energy neutrons has also been studied. With this detector, applications in neutron spectrometer for low-Z material have been pursued with various neutron detection techniques. One of these is a low-Z material identification system. The system has been designed and simulated for contraband luggage interrogation using the detector and the novel neutron source. Also other neutron related applications have been suggested. (author)

  8. CVD polycrystalline diamond. A novel neutron detector and applications

    International Nuclear Information System (INIS)

    Mongkolnavin, R.

    1998-07-01

    Chemical Vapour Deposition (CVD) Polycrystalline Diamond film has been investigated as a low noise sensor for beta particles, gammas and neutrons using High Energy Physics technologies. Its advantages and disadvantages have been explored in comparison with other particle detectors such as silicon detector and other plastic scintillators. The performance and characteristic of the diamond detector have been fully studied and discussed. These studies will lead to a better understanding of how CVD diamonds perform as a detector and how to improve their performance under various conditions. A CVD diamond detector model has been proposed which is an attempt to explain the behaviour of such an extreme detector material. A novel neutron detector is introduced as a result of these studies. A good thermal and fast neutron detector can be fabricated with CVD diamond with new topologies. This detector will perform well without degradation in a high neutron radiation environment, as diamond is known to be radiation-hard. It also offers better neutrons and gammas discrimination for high gamma background applications compared to other semiconductor detectors. A full simulation of the detector has also been done using GEANT, a Monte Carlo simulation program for particle detectors. Simulation results show that CVD diamond detectors with this novel topology can detect neutrons with great directionality. Experimental work has been done on this detector in a nuclear reactor environment and accelerator source. A novel neutron source which offers a fast pulse high-energy neutrons has also been studied. With this detector, applications in neutron spectrometry for low-Z material have been pursued with various neutron detection techniques. One of these is a low-Z material identification system. The system has been designed and simulated for contraband luggage interrogation using the detector and the novel neutron source. (author)

  9. Electrical conduction of glasses in the system Fe2O3-Sb2O3-TeO2; Fe2O3-Sb2O3-TeO2 kei garasu no denki dendo

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Honghua; Mori, H; Sakata, H; Hirayama, T [Tokai Univ., Tokyo (Japan). Faculty of Engineering

    1995-01-01

    In this study, taking into consideration that TeO2 is a component of the glass network and Sb2O3 shows the redox effect in the glasses reducing its possibility of transformation of Sb{sup 3+} to Sb{sup 5+} as well as glass basicity, highly conductive tellurite based glasses have been prepared by the press-quenching method selecting the Fe2O3-Sb2O3-TeO2 system, and the electroconductive mechanism of the glasses has been examined by measuring its D.C. conductivity {sigma}. Part of the obtained information is as follows; the glass formation range of the Fe2O3-Sb2O3-TeO2 system has been 0 {le} Fe2O3 {le} 15mol%, 0 {le} Sb2O3 {le} 18mol% and 78 {le} TeO2 {le} 100mol% and about 15mol% of the additional amount of Fe2O3 has been the limit of glass formation. As the amount of Fe2O3 has increased, C{sub Fe} has also increased and with this, the linear electroconductivity of the glasses has increased from 1.86 {times} 10{sup -7}S{center_dot}cm{sup -1} to 1.62 {times} 10{sup -6}S{center_dot}cm{sup -1} and the glasses have been confirmed as the n-type semiconductor. The factor determining {sigma} of the glasses has been C{sub Fe} which has increased as the amount of Fe2O3 has increased. 34 refs., 8 figs., 2 tabs.

  10. Changes in CVD risk factors in the activity counseling trial

    Directory of Open Access Journals (Sweden)

    Meghan Baruth

    2011-01-01

    Full Text Available Meghan Baruth1, Sara Wilcox1, James F Sallis3, Abby C King4,5, Bess H Marcus6, Steven N Blair1,21Department of Exercise Science, 2Department of Epidemiology and Biostatistics, Arnold School of Public Health, University of South Carolina, Public Health Research Center, Columbia, SC, USA; 3Department of Psychology, San Diego State University, San Diego, CA, USA; 4Department of Health Research and Policy, 5Stanford Prevention Research Center, Department of Medicine, Stanford University School of Medicine, Stanford, CA, USA; 6Behavioral and Social Sciences Section, Brown University Program in Public Health, Providence, RI, USAAbstract: Primary care facilities may be a natural setting for delivering interventions that focus on behaviors that improve cardiovascular disease (CVD risk factors. The purpose of this study was to examine the 24-month effects of the Activity Counseling Trial (ACT on CVD risk factors, to examine whether changes in CVD risk factors differed according to baseline risk factor status, and to examine whether changes in fitness were associated with changes in CVD risk factors. ACT was a 24-month multicenter randomized controlled trial to increase physical activity. Participants were 874 inactive men and women aged 35–74 years. Participants were randomly assigned to one of three arms that varied by level of counseling, intensity, and resource requirements. Because there were no significant differences in change over time between arms on any of the CVD risk factors examined, all arms were combined, and the effects of time, independent of arm, were examined separately for men and women. Time × Baseline risk factor status interactions examined whether changes in CVD risk factors differed according to baseline risk factor status. Significant improvements in total cholesterol, high-density lipoprotein cholesterol (HDL-C and low-density lipoprotein cholesterol, the ratio of total cholesterol to HDL-C, and triglycerides were seen in

  11. The effect of the H2O/TEOS ratio on the structure of gels derived by the acid catalysed hydrolysis of tetraethoxysilane

    International Nuclear Information System (INIS)

    Strawbridge, I.; James, P.F.; Craievich, A.F.

    1985-01-01

    Silica gels were produced by the acid catalysed hydrolysis of tetraethoxysilane (TEOS) using H 2 O/TEOS ratios from 2 to 50. After heat treatment the structure of the gels was studied using nitrogen adsorption, small angle X-ray scattering (SAXS), transmission electron microscopy (TEM) and bulk density measurements. All the gels possessed microporosity in the region of 30 A or less. For H 2 O/TEOS = 25 and 50 the matrix density was found to be uniform, but for gels from solutions with H 2 O/TEOS = 2, 4 and 10, density fluctuations in the matrix were detected from a Porod analysis of the SAXS data. These results indicate that in high water content solutions, rearrangement of the polymeric chains leads to small densified particles, but for lower water content solutions, gelation results from the entanglement of linear chains leaving free volume on a molecular scale between the chains. (Author) [pt

  12. COMPARATIVE EVALUATION OF RISK FACTORS FOR CARDIOVASCULAR DISEASE (CVD) IN GENETICALLY PREDISPOSED RATS

    Science.gov (United States)

    Rodent CVD models are increasingly used for understanding individual differences in susceptibility to environmental stressors such as air pollution. We characterized pathologies and a number of known human risk factors of CVD in genetically predisposed, male young adult Spontaneo...

  13. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    Energy Technology Data Exchange (ETDEWEB)

    Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

    2014-05-02

    Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

  14. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    International Nuclear Information System (INIS)

    Sulyaeva, Veronica S.; Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A.; Kesler, Valerii G.; Kirienko, Viktor V.

    2014-01-01

    Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC x N y films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC x N y films were found to be high optical transparent layers (93%). • BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9

  15. Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

    Science.gov (United States)

    Alharthi, Bader; Grant, Joshua M.; Dou, Wei; Grant, Perry C.; Mosleh, Aboozar; Du, Wei; Mortazavi, Mansour; Li, Baohua; Naseem, Hameed; Yu, Shui-Qing

    2018-05-01

    Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE). Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low temperature. The growth temperature was varied in the low range of 250°C to 450°C to make this growth process compatible with complementary metal-oxide-semiconductor technology. The material and optical properties of the grown Ge films were investigated. The material quality was determined by Raman and x-ray diffraction techniques, revealing growth of crystalline films in the temperature range of 350°C to 450°C. Photoluminescence spectra revealed improved optical quality at growth temperatures of 400°C and 450°C. Furthermore, material quality study using transmission electron microscopy revealed existence of defects in the Ge layer grown at 400°C. Based on the etch pit density, the average threading dislocation density in the Ge layer obtained at this growth temperature was measured to be 4.5 × 108 cm-2. This result was achieved without any material improvement steps such as use of graded buffer or thermal annealing. Comparison between PE and non-plasma-enhanced growth, in the same machine at otherwise the same growth conditions, indicated increased growth rate and improved material and optical qualities for PE growth.

  16. Attenuation process of the longitudinal phonon mode in a TeO2 crystal in the 20-GHz range

    Science.gov (United States)

    Ohno, S.; Sonehara, T.; Tatsu, E.; Koreeda, A.; Saikan, S.

    2017-06-01

    We experimentally investigated the hypersonic attenuation process of a longitudinal mode (L-mode) sound wave in TeO2 from room temperature to a lower temperature using Brillouin scattering and impulsive stimulated thermal scattering (ISTS) measurements. For precise measurement of the Brillouin linewidth at low temperatures, whereby the mean free path of the phonon becomes longer than the sample length, it is indispensable that the phonon should propagate along the phonon-resonance direction. To figure out the suitable direction, we defined two indices characterizing a degree of phonon divergence and a purity of propagation direction. The best direction that we found from these indices is [110] direction in TeO2, and it was used to discuss the temperature and frequency dependences of Brillouin spectra. We extracted the temperature dependence of the attenuation rate of T4 from the modulated Brillouin spectra due to the phonon resonance below Debye temperature. The frequency dependence ω1 of the hypersonic attenuation was also estimated from the polarization dependence of the Brillouin linewidth. Theoretically, it predicted that the L-mode phonon attenuation at low temperatures in TeO2 is a result of Herring's process, which shows the attenuation behavior of ω2T3 . The ω1T4 dependence is not allowed in Herring's process but is allowed by the L +L →L process, which has been considered to be forbidden so far. We evaluated the thermal phonon lifetime using ISTS and established that it was finite even at 20 K, thereby allowing the L +L →L process. Therefore, we conclude that the L +L →L process dominates the attenuation of an L-mode phonon in TeO2 in the low-temperature region.

  17. SAW propagation characteristics of TeO3/3C-SiC/LiNbO3 layered structure

    Science.gov (United States)

    Soni, Namrata D.

    2018-04-01

    Surface acoustic wave (SAW) devices based on Lithium Niobate (LiNbO3) single crystal are advantageous because of its high SAW phase velocity, electromechanical coupling coefficient and cost effectiveness. In the present work a new multi-layered TeO3/3C-SiC/128° Y-X LiNbO3 SAW device has been proposed. SAW propagation properties such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of the TeO3/SiC/128° Y-X LiNbO3 multi layered structure is examined using theoretical calculations. It is found that the integration of 0.09λ thick 3C-SiC over layer on 128° Y-X LiNbO3 increases its electromechanical coupling coefficient from 5.3% to 9.77% and SAW velocity from 3800 ms‑1 to 4394 ms‑1. The SiC/128° Y-X LiNbO3 bilayer SAW structure exhibits a high positive TCD value. A temperature stable layered SAW device could be obtained with introduction of 0.007λ TeO3 over layer on SiC/128° Y-X LiNbO3 bilayer structure without sacrificing the efficiency of the device. The proposed TeO3/3C-SiC/128° Y-X LiNbO3 multi-layered SAW structure is found to be cost effective, efficient, temperature stable and suitable for high frequency application in harsh environment.

  18. Bingham viscosity and yield stress of molten (TeO2)0.78(WO3)0.22 glass

    International Nuclear Information System (INIS)

    Churbanov, M.F.; Snopatin, G.E.; Shaposhnikov, R.M.; Shabarov, V.V.; Plotnichenko, V.G.

    2007-01-01

    The flow of molten (TeO 2 ) 0.78 (WO 3 ) 0.22 glass in a circular-cylindrical channel has been studied at temperatures from 390 to 430 deg C. The variation of the measured volumetric flow rate with the gas pressure over the melt attests to non-Newtonian flow behavior. The flow rates calculated in the pseudo plastic model were used to determine the yield stress and plastic (Bingham) viscosity of the melt [ru

  19. Synthesis and electrochemical study of a hybrid structure based on PDMS-TEOS and titania nanotubes for biomedical applications

    International Nuclear Information System (INIS)

    Castro, António G B; Bastos, Alexandre C; Miranda Salvado, Isabel M; Galstyan, Vardan; Faglia, Guido; Sberveglieri, Giorgio

    2014-01-01

    Metallic implants and devices are widely used in the orthopedic and orthodontic clinical areas. However, several problems regarding their adhesion with the living tissues and inflammatory responses due to the release of metallic ions to the medium have been reported. The modification of the metallic surfaces and the use of biocompatible protective coatings are two approaches to solve such issues. In this study, in order to improve the adhesion properties and to increase the corrosion resistance of metallic Ti substrates we have obtained a hybrid structure based on TiO 2 nanotubular arrays and PDMS-TEOS films. TiO 2 nanotubes have been prepared with two different diameters by means of electrochemical anodization. PDMS-TEOS films have been prepared by the sol–gel method. The morphological and the elemental analysis of the structures have been investigated by scanning electron microscopy and energy dispersive spectroscopy (EDS). Electrochemical impedance spectroscopy (EIS) and polarization curves have been performed during immersion of the samples in Kokubo’s simulated body fluid (SBF) at 37 °C to study the effect of structure layers and tube diameter on the protective properties. The obtained results show that the modification of the surface structure of TiO 2 and the application of PDMS-TEOS film is a promising strategy for the development of implant materials. (paper)

  20. Thermodynamic study of CVD-ZrO2 phase diagrams

    International Nuclear Information System (INIS)

    Torres-Huerta, A.M.; Vargas-Garcia, J.R.; Dominguez-Crespo, M.A.; Romero-Serrano, J.A.

    2009-01-01

    Chemical vapor deposition (CVD) of zirconium oxide (ZrO 2 ) from zirconium acetylacetonate Zr(acac) 4 has been thermodynamically investigated using the Gibbs' free energy minimization method and the FACTSAGE program. Thermodynamic data Cp o , ΔH o and S o for Zr(acac) 4 have been estimated using the Meghreblian-Crawford-Parr and Benson methods because they are not available in the literature. The effect of deposition parameters, such as temperature and pressure, on the extension of the region where pure ZrO 2 can be deposited was analyzed. The results are presented as calculated CVD stability diagrams. The phase diagrams showed two zones, one of them corresponds to pure monoclinic phase of ZrO 2 and the other one corresponds to a mix of monoclinic phase of ZrO 2 and graphite carbon.

  1. Performance of irradiated CVD diamond micro-strip sensors

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; Plano, R.; Somalwar, S.V.; Thomson, G.B.

    2002-01-01

    CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article, we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a β-source and the performance before and after intense (>10 15 /cm 2 ) proton- and pion-irradiations. We find that low dose irradiation increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiation with protons 2.2x10 15 p/cm 2 lowers the signal-to-noise ratio slightly. Intense irradiation with pions 2.9x10 15 π/cm 2 lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations

  2. Performance of irradiated CVD diamond micro-strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D. E-mail: dirk.meier@cern.ch; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; Plano, R.; Somalwar, S.V.; Thomson, G.B

    2002-01-11

    CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article, we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a {beta}-source and the performance before and after intense (>10{sup 15}/cm{sup 2}) proton- and pion-irradiations. We find that low dose irradiation increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiation with protons 2.2x10{sup 15} p/cm{sup 2} lowers the signal-to-noise ratio slightly. Intense irradiation with pions 2.9x10{sup 15} {pi}/cm{sup 2} lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations.

  3. Pulse height distribution and radiation tolerance of CVD diamond detectors

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dangelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F. E-mail: f.hartjes@nikhef.nl; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; D.Tromson,; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.; Fenyvesi, A.; Molnar, J.; Sohler, D

    2000-06-01

    The paper reviews measurements of the radiation tolerance of CVD diamond for irradiation with 24 GeV/c protons, 300 MeV/c pions and 1 MeV neutrons. For proton and neutron irradiation, the measured charge signal spectrum is compared with the spectrum calculated by a model. Irradiation by particles causes radiation damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model shows that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. In addition, we observed after proton irradiation at the charge signal spectrum a decrease of the number of small signals. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal.

  4. Performance of irradiated CVD diamond micro-strip sensors

    CERN Document Server

    Adam, W; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Krammer, Manfred; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Noomen, J; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S R; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zöller, M

    2002-01-01

    CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a $\\beta$-source and the performance before and after intense ($>10^{15}/{\\rm cm^2}$) proton- and pion-irradiations. We find that low dose irradiations increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiations with protons ($2.2\\times 10^{15}~p/{\\rm cm^2}$) lowers the signal-to-noise ratio slightly. Intense irradiation with pions ($2.9\\times 10^{15}~\\pi/{\\rm cm^2}$) lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations.

  5. Performance of irradiated CVD diamond micro-strip sensors

    Science.gov (United States)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; Plano, R.; Somalwar, S. V.; Thomson, G. B.

    2002-01-01

    CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article, we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a β-source and the performance before and after intense (>10 15/cm 2) proton- and pion-irradiations. We find that low dose irradiation increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiation with protons 2.2×10 15 p/ cm2 lowers the signal-to-noise ratio slightly. Intense irradiation with pions 2.9×10 15 π/ cm2 lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations.

  6. Assessment of CVD diamond as a thermoluminescence dosemeter material

    International Nuclear Information System (INIS)

    Borchi, E.; Furetta, C.; Leroy, C.

    1996-01-01

    Diamond has a low atomic number (Z = 6) and is therefore essentially soft tissue (Z = 7.4) equivalent. As such, diamond is an attractive material for applications in dosimetry in which the radiation absorption in the sensor material should be as close as possible to that of soft tissue. Synthetic diamond prepared by chemical vapour deposition (CVD) offers an attractive option for this application. The aim of the present work is to report results on the thermoluminescence (TL) properties of CVD diamond samples. The annealing procedures, the linearity of the TL response as a function of dose, a short-term fading experiment and some kinetic properties have been investigated and are reported here. (Author)

  7. Cold Vacuum Drying (CVD) OCRWM Loop Error Determination

    International Nuclear Information System (INIS)

    PHILIPP, B.L.

    2000-01-01

    Characterization is specifically identified by the Richland Operations Office (RL) for the Office of Civilian Radioactive Waste Management (OCRWM) of the US Department of Energy (DOE), as requiring application of the requirements in the Quality Assurance Requirements and Description (QARD) (RW-0333P DOE 1997a). Those analyses that provide information that is necessary for repository acceptance require application of the QARD. The cold vacuum drying (CVD) project identified the loops that measure, display, and record multi-canister overpack (MCO) vacuum pressure and Tempered Water (TW) temperature data as providing OCRWM data per Application of the Office of Civilian Radioactive Waste Management (OCRWM) Quality Assurance Requirements to the Hanford Spent Nuclear Fuel Project HNF-SD-SNF-RPT-007. Vacuum pressure transmitters (PT 1*08, 1*10) and TW temperature transmitters (TIT-3*05, 3*12) are used to verify drying and to determine the water content within the MCO after CVD

  8. Pulse height distribution and radiation tolerance of CVD diamond detectors

    CERN Document Server

    Adam, W; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S R; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Zeuner, W; Zöller, M; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    The paper reviews measurements of the radiation tolerance of CVD diamond for irradiation with 24 GeV/c protons, 300 MeV/c pions and 1 MeV neutrons. For proton and neutron irradiation, the measured charge signal spectrum is compared with the spectrum calculated by a model. Irradiation by particles causes radiation damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model shows that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. In addition, we observed after proton irradiation at the charge signal spectrum a decrease of the number of small signals. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal. (11 refs).

  9. Pulse height distribution and radiation tolerance of CVD diamond detectors

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dangelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; D.Tromson,; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.; Fenyvesi, A.; Molnar, J.; Sohler, D.

    2000-01-01

    The paper reviews measurements of the radiation tolerance of CVD diamond for irradiation with 24 GeV/c protons, 300 MeV/c pions and 1 MeV neutrons. For proton and neutron irradiation, the measured charge signal spectrum is compared with the spectrum calculated by a model. Irradiation by particles causes radiation damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model shows that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. In addition, we observed after proton irradiation at the charge signal spectrum a decrease of the number of small signals. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal

  10. Crystal growth of CVD diamond and some of its peculiarities

    CERN Document Server

    Piekarczyk, W

    1999-01-01

    Experiments demonstrate that CVD diamond can form in gas environments that are carbon undersaturated with respect to diamond. This fact is, among others, the most serious violation of principles of chemical thermodynamics. In this $9 paper it is shown that none of the principles is broken when CVD diamond formation is considered not a physical process consisting in growth of crystals but a chemical process consisting in accretion of macro-molecules of polycyclic $9 saturated hydrocarbons belonging to the family of organic compounds the smallest representatives of which are adamantane, diamantane, triamantane and so forth. Since the polymantane macro-molecules are in every respect identical with $9 diamond single crystals with hydrogen-terminated surfaces, the accretion of polymantane macro- molecules is a process completely equivalent to the growth of diamond crystals. However, the accretion of macro-molecules must be $9 described in a way different from that used to describe the growth of crystals because so...

  11. CoFe{sub 2}O{sub 4} nanoparticles as a catalyst: synthesis of a forest of vertically aligned CNTs of uniform diameters by plasma-enhanced CVD

    Energy Technology Data Exchange (ETDEWEB)

    Baliyan, Ankur [Graduate School of Interdisciplinary New Science, Toyo University (Japan); Fukuda, Takahiro [Bio-Nano Electronics Research Centre, Toyo University (Japan); Hayasaki, Yasuhiro; Uchida, Takashi; Nakajima, Yoshikata; Hanajiri, Tatsuro; Maekawa, Toru, E-mail: maekawa@toyo.jp [Graduate School of Interdisciplinary New Science, Toyo University (Japan)

    2013-06-15

    Controlling actively the structures of carbon nanotubes such as the alignment, length, diameter, chirality and the number of walls still remains a crucial challenge. The properties of CNTs are highly structure sensitive and particularly dependent on the diameter and number of walls. In this brief communication, we synthesise monodisperse CoFe{sub 2}O{sub 4} nanoparticles of uniform diameters, i.e. 4.8 and 6.9 nm, which are modified with oleic acid as a catalyst for the growth of CNTs. We show that a forest of vertically aligned CNTs of uniform diameters and lengths can be grown using CoFe{sub 2}O{sub 4} nanoparticles. The internal diameters and lengths of CNTs grown using CoFe{sub 2}O{sub 4} nanoparticles of 4.8 and 6.9 nm diameters are, respectively, 4.4 and 6.2 nm and 10 and 15 {mu}m. It is clearly shown that the number of walls of CNTs can be engineered changing the materials of the catalytic nanoparticles. The present results may well encourage further systematic studies on the growth of CNTs using various combinations of elements for the catalytic nanoparticles under different external conditions, which may provide not only the possibilities of controlling the properties of CNTs but also an insight into the nucleation and growth mechanisms.

  12. Parameterisation of radiation effects on CVD diamond for proton irradiation

    International Nuclear Information System (INIS)

    Hartjes, F.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.

    1999-01-01

    The paper reviews measurements of the radiation hardness of CVD diamond for 24 GeV/c proton irradiation at fluences up to 5 * 10 15 protons/cm 2 . The results not only show radiation damage but also an annealing effect that is dominant at levels around 10 15 protons/cm 2 . A model describing both effects is introduced, enabling a prediction of the distribution curve of the charge signal for other levels

  13. Parameterisation of radiation effects on CVD diamond for proton irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hartjes, F.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M

    1999-08-01

    The paper reviews measurements of the radiation hardness of CVD diamond for 24 GeV/c proton irradiation at fluences up to 5{sup *}10{sup 15} protons/cm{sup 2}. The results not only show radiation damage but also an annealing effect that is dominant at levels around 10{sup 15} protons/cm{sup 2}. A model describing both effects is introduced, enabling a prediction of the distribution curve of the charge signal for other levels.

  14. Enriched TeO2 bolometers with active particle discrimination: Towards the CUPID experiment

    Directory of Open Access Journals (Sweden)

    D.R. Artusa

    2017-04-01

    Full Text Available We present the performances of two 92% enriched 130TeO2 crystals operated as thermal bolometers in view of a next generation experiment to search for neutrinoless double beta decay of 130Te. The crystals, 435 g each, show an energy resolution, evaluated at the 2615 keV γ-line of 208Tl, of 6.5 and 4.3 keV FWHM. The only observable internal radioactive contamination arises from 238U (15 and 8 μBq/kg, respectively. The internal activity of the most problematic nuclei for neutrinoless double beta decay, 226Ra and 228Th, are both evaluated as <3.1 μBq/kg for one crystal and <2.3 μBq/kg for the second. Thanks to the readout of the weak Cherenkov light emitted by β/γ particles by means of Neganov–Luke bolometric light detectors we were able to perform an event-by-event identification of β/γ events with a 95% acceptance level, while establishing a rejection factor of 98.21% and 99.99% for α particles.

  15. Identity and Friendship in Hsu-Ming Teo´s Behind the Moon (2000

    Directory of Open Access Journals (Sweden)

    Catalina Ribas Segura

    2015-03-01

    Full Text Available In her second novel, Behind the Moon (2000, Hsu-Ming Teo explores the identity construction of three teenage friends and how they defy the notion of the „ideal‟ Australian as a heterosexual, Protestant, white, English-speaking, Australian-born of British ancestry young adult person. Set in the western suburbs of Sydney in the 1990s, the three friends are an example of the multicultural society of the time: Justin Cheong, the son of a Chinese-Singaporean family who arrived in Australia with the Business Migration Programme; Tien Ho, a refugee girl of Chinese-Vietnamese and Afro-CajunCreole-American ancestry; and Nigel „Gibbo‟ Gibson, the son of an Anglo-Australian father and an English mother. The novel tackles different relations among these characters and their families during their teenage years and especially as young adults. This paper seeks to analyse the evolution of the identities of Justin, Tien and „Gibbo‟ through the notions of belonging, gender construction and sexuality. In order to do so, the main theories applied will be the insights on homosexuality and on masculinities of Maria Pallotta-Chiarolli (1995 and Raewyn W. Connell (1995 and Manuel Castellsʼ (2010 identity construction theory

  16. Visible light driven multifunctional photocatalysis in TeO2-based semiconductor glass ceramics

    Science.gov (United States)

    Kushwaha, Himmat Singh; Thomas, Paramanandam; Vaish, Rahul

    2017-01-01

    Photocatalytic xCaCu3Ti4O12-(100-x)TeO2 (x=0.25 mol% to 3 mol%), glass nanocomposites were fabricated and investigated for wastewater treatment, self-cleaning surfaces, and photocatalytic hydrogen evolution. Visible light active crystals of Cu-doped TiO2 and TiTe3O8 were grown by optimized crystallization of as-quenched glasses. The visible light photocatalytic activity of glass samples was investigated for estrogenic pharmaceutical pollutants, and the degradation rate was obtained as 168.56 min-1 m-2. A higher photocatalytic H2 production rate was observed (135 μmole h-1 g-1) for the crystallized CaCu3Ti4O12-TeO2 (x=3. 0) glass plate under visible light. The self-cleaning performance was observed using contact angle measurements for water under dark and light conditions. These visible light active glass ceramics are a cost effective sustainable solution for water treatment and self-cleaning applications.

  17. Competitive Adsorption and Oxidation Behavior of Heavy Metals on nZVI Coated with TEOS.

    Science.gov (United States)

    Eglal, Mahmoud M; Ramamurthy, Amruthur S

    2015-11-01

    Zero valent iron nanoparticle (nanofer ZVI) is a powerful substance due to its coating with tetraethyl orthosilicate (TEOS). Tetraethyl orthosilicate imparts higher reactivity and decreases particle agglomeration. The competitive removal and displacement of multi-metals are influenced by time, pH, and initial concentration, the presence and properties of competing metals ion in the solution. For both the isotherm and kinetic studies performed for multi-metal removal experiments, compared to Pb II and Cd II, Cu II experienced a higher removal rate during the initial 5 minutes. After 120 minutes, all metals achieved removal efficiency in the range of 95 to 99%. The results of single and competitive kinetic tests for all three metals during the initial 5 minutes indicated that the presence of other metals generally reduce removal efficiency of metals. Both kinetic test and electron dispersive spectroscope (EDS) studies found that Cu II gets removed faster than the other metals. Pseudo-second order behavior was noted for the multi-metal removal systems.

  18. Correction of Visual Perception Based on Neuro-Fuzzy Learning for the Humanoid Robot TEO

    Directory of Open Access Journals (Sweden)

    Juan Hernandez-Vicen

    2018-03-01

    Full Text Available New applications related to robotic manipulation or transportation tasks, with or without physical grasping, are continuously being developed. To perform these activities, the robot takes advantage of different kinds of perceptions. One of the key perceptions in robotics is vision. However, some problems related to image processing makes the application of visual information within robot control algorithms difficult. Camera-based systems have inherent errors that affect the quality and reliability of the information obtained. The need of correcting image distortion slows down image parameter computing, which decreases performance of control algorithms. In this paper, a new approach to correcting several sources of visual distortions on images in only one computing step is proposed. The goal of this system/algorithm is the computation of the tilt angle of an object transported by a robot, minimizing image inherent errors and increasing computing speed. After capturing the image, the computer system extracts the angle using a Fuzzy filter that corrects at the same time all possible distortions, obtaining the real angle in only one processing step. This filter has been developed by the means of Neuro-Fuzzy learning techniques, using datasets with information obtained from real experiments. In this way, the computing time has been decreased and the performance of the application has been improved. The resulting algorithm has been tried out experimentally in robot transportation tasks in the humanoid robot TEO (Task Environment Operator from the University Carlos III of Madrid.

  19. CVD diamonds as thermoluminescent detectors for medical applications

    International Nuclear Information System (INIS)

    Marczewska, B.; Olko, P.; Nesladek, M.; Waligorski, M.P.R.; Kerremans, Y.

    2002-01-01

    Diamond is believed to be a promising material for medical dosimetry due to its tissue equivalence, mechanical and radiation hardness, and lack of solubility in water or in disinfecting agents. A number of diamond samples, obtained under different growth conditions at Limburg University, using the chemical vapour deposition (CVD) technique, was tested as thermoluminescence dosemeters. Their TL glow curve, TL response after doses of gamma rays, fading, and so on were studied at dose levels and for radiation modalities typical for radiotherapy. The investigated CVD diamonds displayed sensitivity comparable with that of MTS-N (Li:Mg,Ti) detectors, signal stability (reproducibility after several readouts) below 10% (1 SD) and no fading was found four days after irradiation. A dedicated CVD diamond plate was grown, cut into 20 detector chips (3x3x0.5 mm) and used for measuring the dose-depth distribution at different depths in a water phantom, for 60 Co and six MV X ray radiotherapy beams. Due to the sensitivity of diamond to ambient light, it was difficult to achieve reproducibility comparable with that of standard LiF detectors. (author)

  20. Nitrogen and hydrogen related infrared absorption in CVD diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Titus, E. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal)]. E-mail: elby@mec.ua.pt; Ali, N. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Cabral, G. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Madaleno, J.C. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Neto, V.F. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Gracio, J. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Ramesh Babu, P [Materials Ireland, Polymer research Centre, School of Physics, Dublin (Ireland); Sikder, A.K. [Department of Physics, Indian Institute of Technology (IIT), Bombay (India); Okpalugo, T.I. [Northern Ireland Bio-Engineering Centre, NIBEC, University of Ulster (United Kingdom); Misra, D.S. [Department of Physics, Indian Institute of Technology (IIT), Bombay (India)

    2006-09-25

    In this paper, we investigate on the presence of hydrogen and nitrogen related infrared absorptions in chemical vapour deposited (CVD) diamond films. Investigations were carried out in cross sections of diamond windows, deposited using hot filament CVD (HFCVD). The results of Scanning Electron Microscopy (SEM), Fourier Transform Infrared (FTIR) and Raman spectroscopy carried out in a cross section of self-standing diamond sheets are presented. The FTIR spectra showed several features that have not been reported before. In order to confirm the frequency of nitrogen related vibrations, ab-initio calculations were carried out using GAMESS program. The investigations showed the presence of several C-N related peaks in one-phonon (1000-1333 cm{sup -1}). The deconvolution of the spectra in the three-phonon region (2700-3150 cm{sup -1}) also showed a number of vibration modes corresponding to sp {sup m}CH {sub n} phase of carbon. Elastic recoil detection analysis (ERDA) was employed to compare the H content measured using FTIR technique. Using these measurements we point out that the oscillator strength of the different IR modes varies depending upon the structure and H content of CVD diamond sheets.

  1. Thermoluminescent properties of CVD diamond: applications to ionising radiation dosimetry

    International Nuclear Information System (INIS)

    Petitfils, A.

    2007-09-01

    Remarkable properties of synthetic diamond (human soft tissue equivalence, chemical stability, non-toxicity) make this material suitable for medical application as thermoluminescent dosimeter (TLD). This work highlights the interest of this material as radiotherapy TLD. In the first stage of this work, we looked after thermoluminescent (TL) and dosimetric properties of polycrystalline diamond made by Chemically Vapor Deposited (CVD) synthesis. Dosimetric characteristics are satisfactory as TLD for medical application. Luminescence thermal quenching on diamond has been investigated. This phenomenon leads to a decrease of dosimetric TL peak sensitivity when the heating rate increases. The second part of this work analyses the use of synthetic diamond as TLD in radiotherapy. Dose profiles, depth dose distributions and the cartography of an electron beam obtained with our samples are in very good agreement with results from an ionisation chamber. It is clearly shown that CVD) diamond is of interest to check beams of treatment accelerators. The use of these samples in a control of treatment with Intensity Modulated Radiation Therapy underlines good response of synthetic diamond in high dose gradient areas. These results indicate that CVD diamond is a promising material for radiotherapy dosimetry. (author)

  2. Investigation of CVD graphene topography and surface electrical properties

    International Nuclear Information System (INIS)

    Wang, Rui; Pearce, Ruth; Gallop, John; Patel, Trupti; Pollard, Andrew; Hao, Ling; Zhao, Fang; Jackman, Richard; Klein, Norbert; Zurutuza, Amaia

    2016-01-01

    Combining scanning probe microscopy techniques to characterize samples of graphene, a selfsupporting, single atomic layer hexagonal lattice of carbon atoms, provides far more information than a single technique can. Here we focus on graphene grown by chemical vapour deposition (CVD), grown by passing carbon containing gas over heated copper, which catalyses single atomic layer growth of graphene on its surface. To be useful for applications the graphene must be transferred onto other substrates. Following transfer it is important to characterize the CVD graphene. We combine atomic force microscopy (AFM) and scanning Kelvin probe microscopy (SKPM) to reveal several properties of the transferred film. AFM alone provides topographic information, showing ‘wrinkles’ where the transfer provided incomplete substrate attachment. SKPM measures the surface potential indicating regions with different electronic properties for example graphene layer number. By combining AFM and SKPM local defects and impurities can also be observed. Finally, Raman spectroscopy can confirm the structural properties of the graphene films, such as the number of layers and level of disorder, by observing the peaks present. We report example data on a number of CVD samples from different sources. (paper)

  3. Mass production of CNTs using CVD multi-quartz tubes

    Energy Technology Data Exchange (ETDEWEB)

    Yousef, Samy; Mohamed, Alaa [Dept. of Production Engineering and Printing Technology, Akhbar Elyom Academy, Giza (Egypt)

    2016-11-15

    Carbon nanotubes (CNTs) have become the backbone of modern industries, including lightweight and heavy-duty industrial applications. Chemical vapor deposition (CVD) is considered as the most common method used to synthesize high yield CNTs. This work aims to develop the traditional CVD for the mass production of more economical CNTs, meeting the growing CNT demands among consumers by increasing the number of three particular reactors. All reactors housing is connected by small channels to provide the heat exchange possibility between the chambers, thereby decreasing synthesis time and reducing heat losses inside the ceramic body of the furnace. The novel design is simple and cheap with a lower reacting time and heat loss compared with the traditional CVD design. Methane, hydrogen, argon, and catalyzed iron nanoparticles were used as a carbon source and catalyst during the synthesis process. In addition, CNTs were produced using only a single quartz tube for comparison. The produced samples were examined using XRD, TEM, SEM, FTIR, and TGA. The results showed that the yield of CNTs increases by 287 % compared with those synthesized with a single quartz tube. Moreover, the total synthesis time of CNTs decreases by 37 % because of decreased heat leakage.

  4. CVD synthesis of HTSC films using volatile coordination compounds

    International Nuclear Information System (INIS)

    Volkov, S.V.; Zub, V.Y.; Balakshina, O.N.; Mazurenko, E.A.

    1995-01-01

    Thin HTSC films of YBa 2 Cu 3 O 7-x with high c-axis orientation have been grown using PE MOCVD technique and adducts of copper, yttrium and barium acetylacetonate with α,α'- dipyridyl as precursors. In-situ films were deposited in N 2 and O 2 gas reactant mixture at reduced substrate temperatures. HTSC films prepared on SrTiO 3 , ZrO 2 (Y) and MgO substrates have rather high electric characteristics (e.g. j c ∼10 4 - 10 5 A/cm 2 ). The problem of β-diketonate adducts using as precursors for plasma enhanced chemical vapor deposition of superconductive films was discussed. (orig.)

  5. Role of chlorine in the nanocrystalline silicon film formation by rf plasma-enhanced chemical vapor deposition of chlorinated materials

    International Nuclear Information System (INIS)

    Shirai, Hajime

    2004-01-01

    We demonstrate the disorder-induced low-temperature crystallization in the nanocrystalline silicon film growth by rf plasma-enhanced chemical vapor deposition of H 2 -diluted SiH 2 Cl 2 and SiCl 4 . The combination of the chemical reactivity of SiCld (d: dangling bond) and SiHCl complexes and the release of the disorder-induced stress near the growing surface tightly correlate with the phase transitionity of SiCld and SiHCl complexes near the growing surface with the aid of atomic hydrogen, which induce higher degree of disorder in the a-Si network. These features are most prominent in the SiCl 4 compared with those of SiH 2 Cl 2 and SiH 4 , which preferentially enhance the nanocrystalline Si formation

  6. Atomic force microscopy indentation of fluorocarbon thin films fabricated by plasma enhanced chemical deposition at low radio frequency power

    International Nuclear Information System (INIS)

    Sirghi, L.; Ruiz, A.; Colpo, P.; Rossi, F.

    2009-01-01

    Atomic force microscopy (AFM) indentation technique is used for characterization of mechanical properties of fluorocarbon (CF x ) thin films obtained from C 4 F 8 gas by plasma enhanced chemical vapour deposition at low r.f. power (5-30 W) and d.c. bias potential (10-80 V). This particular deposition method renders films with good hydrophobic property and high plastic compliance. Commercially available AFM probes with stiff cantilevers (10-20 N/m) and silicon sharpened tips (tip radius < 10 nm) are used for indentations and imaging of the resulted indentation imprints. Force depth curves and imprint characteristics are used for determination of film hardness, elasticity modulus and plasticity index. The measurements show that the decrease of the discharge power results in deposition of films with decreased hardness and stiffness and increased plasticity index. Nanolithography based on AFM indentation is demonstrated on thin films (thickness of 40 nm) with good plastic compliance.

  7. Synthesis and growth mechanism of Fe-catalyzed carbon nanotubes by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Jiang Jun; Feng Tao; Cheng Xinhong; Dai Lijuan; Cao Gongbai; Jiang Bingyao; Wang Xi; Liu Xianghuai; Zou Shichang

    2006-01-01

    Plasma-enhanced chemical vapor deposition (PECVD) was used to grow Fe-catalyzed carbon nanotubes (CNTs). The nanotubes had a uniform diameter in the range of about 10-20 nm. A base growth mode was responsible for the CNTs growth using a mixture of H 2 (60 sccm) and C 2 H 2 (15 sccm). For a mixture of H 2 (100 sccm) and C 2 H 2 (25 sccm), a complicated growth mechanism took place involving both the base growth and the tip growth. X-ray photoelectron spectroscopy measurements revealed that the grown CNTs contained C-H covalent bonds and Fe-C bonds located at the interface between them and the substrates. The factors determining the growth mechanism of CNTs are discussed and their growth mechanisms with the different gas ratios are suggested

  8. Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Suk, Kyung-Suk; Jung, Ha-Na; Woo, Hee-Gweon; Park, Don-Hee; Kim, Do-Heyoung

    2010-05-01

    Ge-Sb-Te (GST) thin films were deposited on TiN, SiO2, and Si substrates by cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) using Ge{N(CH3)(C2H5)}, Sb(C3H7)3, Te(C3H7)3 as precursors in a vertical flow reactor. Plasma activated H2 was used as the reducing agent. The growth behavior was strongly dependent on the type of substrate. GST grew as a continuous film on TiN regardless of the substrate temperature. However, GST formed only small crystalline aggregates on Si and SiO2 substrates, not a continuous film, at substrate temperatures > or = 200 degrees C. The effects of the deposition temperature on the surface morphology, roughness, resistivity, crystallinity, and composition of the GST films were examined.

  9. Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Saeed, Saba; Buters, Frank; Dohnalova, Katerina; Wosinski, Lech; Gregorkiewicz, Tom

    2014-10-10

    We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO(2).Optical characterization reveals two prominent emission bands centered around 2.6 eV and 3.4 eV, and tunable by excitation energy. In addition, the lower energy band shows an excitation power-dependent blue shift of up to 0.3 eV. Decay dynamics of the observed emission contains fast (nanosecond) and slow (microseconds) components, indicating contributions of several relaxation channels. Based on these material characteristics, a possible microscopic origin of the individual emission bands is discussed.

  10. An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Garg, D.; Henderson, P.B.; Hollingsworth, R.E.; Jensen, D.G.

    2005-01-01

    The costs of manufacturing electrochromic WO 3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO 3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF 6 , sputtering cost is dominated by labor and depreciation

  11. Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

    International Nuclear Information System (INIS)

    Zhang Jian; Yang Hui; Zhang Qilong; Dong Shurong; Luo, J. K.

    2013-01-01

    ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10 3 , better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

  12. Si Nano wires Produced by Very High Frequency Plasma Enhanced Chemical Vapor Deposition (PECVD) via VLS Mechanism

    International Nuclear Information System (INIS)

    Yussof Wahab; Yussof Wahab; Habib Hamidinezhad; Habib Hamidinezhad

    2013-01-01

    Silicon nano wires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nano wires were grown randomly and energy-dispersive X-ray spectroscopy analysis indicates that the nano wires have the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs displayed SiNWs that are needle-like with a diameter ranged from 30 nm at the top to 100 nm at the bottom of the wire and have length a few of micrometers. In addition, HRTEM showed that SiNWs consist of crystalline silicon core and amorphous silica layer. (author)

  13. An economic analysis of the deposition of electrochromic WO{sub 3} via sputtering or plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garg, D. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States); Henderson, P.B. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States)]. E-mail: henderpb@airproducts.co; Hollingsworth, R.E. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States); Jensen, D.G. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States)

    2005-06-15

    The costs of manufacturing electrochromic WO{sub 3} thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO{sub 3} for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF{sub 6}, sputtering cost is dominated by labor and depreciation.

  14. Characterization of thin TiO2 films prepared by plasma enhanced chemical vapour deposition for optical and photocatalytic applications

    International Nuclear Information System (INIS)

    Sobczyk-Guzenda, A.; Gazicki-Lipman, M.; Szymanowski, H.; Kowalski, J.; Wojciechowski, P.; Halamus, T.; Tracz, A.

    2009-01-01

    Thin titanium oxide films were deposited using a radio frequency (RF) plasma enhanced chemical vapour deposition method. Their optical properties and thickness were determined by means of ultraviolet-visible absorption spectrophotometry. Films of the optical parameters very close to those of titanium dioxide have been obtained at the high RF power input. Their optical quality is high enough to allow for their use in a construction of stack interference optical filters. At the same time, these materials exhibit strong photocatalytic effects. The results of structural analysis, carried out by Raman Shift Spectroscopy, show that the coatings posses amorphous structure. However, Raman spectra of the same films subjected to thermal annealing at 450 o C disclose an appearance of a crystalline form, namely that of anatase. Surface morphology of the films has also been characterized by Atomic Force Microscopy revealing granular, broccoli-like topography of the films.

  15. Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu Xuanyong; Chu, Paul K.; Ding Chuanxian

    2007-01-01

    Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans

  16. Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xuanyong [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China) and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: xyliu@mail.sic.ac.cn; Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: paul.chu@cityu.edu.hk; Ding Chuanxian [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

    2007-01-15

    Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter <1 0 0> silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans.

  17. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  18. Sticking non-stick: Surface and Structure control of Diamond-like Carbon in Plasma Enhanced Chemical Vapour Deposition

    Science.gov (United States)

    Jones, B. J.; Nelson, N.

    2016-10-01

    This short review article explores the practical use of diamond-like carbon (DLC) produced by plasma enhanced chemical vapour deposition (PECVD). Using as an example issues relating to the DLC coating of a hand-held surgical device, we draw on previous works using atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, tensiometry and electron paramagnetic resonance. Utilising data from these techniques, we examine the surface structure, substrate-film interface and thin film microstructure, such as sp2/sp3 ratio (graphitic/diamond-like bonding ratio) and sp2 clustering. We explore the variations in parameters describing these characteristics, and relate these to the final device properties such as friction, wear resistance, and diffusion barrier integrity. The material and device characteristics are linked to the initial plasma and substrate conditions.

  19. Sticking non-stick: Surface and Structure control of Diamond-like Carbon in Plasma Enhanced Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Jones, B J; Nelson, N

    2016-01-01

    This short review article explores the practical use of diamond-like carbon (DLC) produced by plasma enhanced chemical vapour deposition (PECVD). Using as an example issues relating to the DLC coating of a hand-held surgical device, we draw on previous works using atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, tensiometry and electron paramagnetic resonance. Utilising data from these techniques, we examine the surface structure, substrate-film interface and thin film microstructure, such as sp 2 /sp 3 ratio (graphitic/diamond-like bonding ratio) and sp 2 clustering. We explore the variations in parameters describing these characteristics, and relate these to the final device properties such as friction, wear resistance, and diffusion barrier integrity. The material and device characteristics are linked to the initial plasma and substrate conditions. (paper)

  20. Transport properties of field effect transistors with randomly networked single walled carbon nanotubes grown by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Park, Wanjun

    2009-01-01

    The transport properties of randomly networked single walled carbon nanotube (SWNT) transistors with different channel lengths of L c = 2-10 μm were investigated. Randomly networked SWNTs were directly grown for the two different densities of ρ ∼ 25 μm -2 and ρ ∼ 50 μm -2 by water plasma enhanced chemical vapour deposition. The field effect transport is governed mainly by formation of the current paths that is related to the nanotube density. On the other hand, the off-state conductivity deviates from linear dependence for both nanotube density and channel length. The field effect mobility of holes is estimated as 4-13 cm 2 V -1 s -1 for the nanotube transistors based on the simple MOS theory. The mobility is increased for the higher density without meaningful dependence on the channel lengths.

  1. The growth of axially modulated p–n GaN nanowires by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Tung-Hsien; Hong, Franklin Chau-Nan

    2013-01-01

    Due to the n-type characteristics of intrinsic gallium nitride, p-type gallium nitride (GaN) is more difficult to synthesize than n-type gallium nitride in forming the p–n junctions for optoelectronic applications. For the growth of the p-type gallium nitride, magnesium is used as the dopant. The Mg-doped GaN nanowires (NWs) have been synthesized on (111)-oriented n + -silicon substrates by plasma-enhanced chemical vapor deposition. The scanning electron microscope images showed that the GaN NWs were bent at high Mg doping levels, and the transmission electron microscope characterization indicated that single-crystalline GaN NWs grew along < 0001 > orientation. As shown by energy dispersive spectroscopy, the Mg doping levels in GaN NWs increased with increasing partial pressure of magnesium nitride, which was employed as the dopant precursor for p-GaN NW growth. Photoluminescence measurements suggested the presence of both p- and n‐type GaN NWs. Furthermore, the GaN NWs with axial p–n junctions were aligned between either two-Ni or two-Al electrodes by applying alternating current voltages. The current–voltage characteristics have confirmed the formation of axial p–n junctions in GaN nanowires. - Highlights: ► Grow axially modulated GaN nanowires by plasma-enhanced chemical vapor deposition ► Control the Mg concentration of GaN nanowires by tuning Mg 3 N 2 temperature ► Align the GaN nanowires by applying alternating current voltages between electrodes

  2. SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

    International Nuclear Information System (INIS)

    Croci, S.; Pecheur, A.; Autran, J.L.; Vedda, A.; Caccavale, F.; Martini, M.; Spinolo, G.

    2001-01-01

    Silicon dioxide films have been deposited by plasma-enhanced chemical vapor deposition at low substrate temperature (50 deg. C) in a parallel-plate reactor using hexamethyldisilazane (HMDS), diluted in He, and O 2 as Si and O precursors. The effect of the O 2 /(HMDS+He) flow rate ratio on the oxide properties has been investigated in the range of 0.05-1.25 by means of deposition rate, wet etching rate, secondary ion mass spectrometry, thermally stimulated luminescence, and high frequency capacitance-voltage measurements. Both the deposition rate and the etching rate increase by increasing the O 2 /(HMDS+He) flow rate ratio and reach a constant value at flow rate ratios higher than 0.6. The strong increase and saturation in the deposition rate can be attributed to the impinging oxide atoms flux and to the consumption of silyl radicals at the deposition surface, respectively. The Si/SiO 2 interface state density and the positive fixed charge density are in the range 1x10 11 -1x10 12 eV -1 cm -2 and 6x10 11 -1.5x10 12 C cm -2 , respectively. These concentrations are comparable with literature data concerning SiO 2 films obtained by plasma enhanced chemical vapor deposition at temperatures higher than 200 deg. C using other Si precursors. Moreover, the interface state density decreases while the fixed oxide charge increases by increasing the O 2 /(HMDS+He) flow rate ratio. A correlation has been found between defects monitored by thermally stimulated luminescence and fixed oxide charges. From a comparison with secondary ion mass spectrometry results, the fixed oxide charges can be preliminarily attributed to intrinsic defects

  3. Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

    International Nuclear Information System (INIS)

    Chong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul

    2012-01-01

    High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X C of ∼82% and are surrounded by a thin layer of SiO x . The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X C to ∼65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ∼1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text. - Highlights: ► Growth of random oriented silicon nanowires using hot-wire assisted plasma enhanced chemical vapor deposition. ► Increase in rf power reduces the crystallinity of silicon nanowires. ► High density and nanocrystalline structure in silicon nanowires significant enhance the near IR light absorption. ► Oxide defects and silicon nanocrystallites in silicon nanowires reveal photoluminescence in red–orange and red regions.

  4. Phase Equilibria Study in the TeO2-Na2O-SiO2 System in Air Between 723 K (500 °C) and 1473 K (1200 °C)

    Science.gov (United States)

    Santoso, Imam; Taskinen, Pekka

    2016-08-01

    Knowledge of phase equilibria in the TeO2-Na2O-SiO2 system at elevated temperatures is important for ceramic and glass industries and for improving the operation of the smelting process of tellurium-containing materials. A review of previous investigations has indicated, however, that there are omissions in the available datasets on the liquidus temperatures of the molten TeO2-Na2O-SiO2 mixtures. The employed experimental method included equilibration of mixtures made from high purity oxides, rapid quenching of the equilibrated samples in water and followed by compositional analysis of the phases using an electron probe X-ray microanalyzer. The liquidus and phase equilibria in the TeO2-SiO2, TeO2-Na2O, and SiO2-TeO2-Na2O systems have been studied for a wide range of compositions between 723 K (500 °C) and 1473 K (1200 °C) at TeO2, SiO2, and Na2SiO3 saturations. New data have been generated in the SiO2-TeO2-Na2O system at SiO2 saturation. The liquidus compositions in the TeO2-Na2O system at TeO2 saturation have been compared with the previous data and an assessed phase diagram.

  5. Nucleation of microwave plasma CVD diamond on molybdenum (Mo) substrate

    International Nuclear Information System (INIS)

    Inderjeet, K.; Ramesh, S.

    2000-01-01

    Molybdenum is a metal, which is gaining increasing significance in industrial applications. The main use of Mo is as all alloying element added in small amounts to steel, irons and non- ferrous alloys in order to enhance the strength, toughness and wear resistance. Mo is also vastly being employed in the automotive and aircraft industries, mainly due to its low coefficient of friction. Diamond, on be other hand, is a unique material for innumerable applications because of its usual combination of physical and chemical properties. Several potential applications can be anticipated for diamond in many sectors including electronics, optics, as protective corrosion resistant coatings, cutting tools, etc. With the enhancement in science and technology, diamond microcrystals and thin films are now being produced from the vapour phase by a variety of chemical vapour deposition (CVD) techniques; such as microwave plasma CVD. With such technology being made available, it is envisage that diamond-coated molybdenum would further enhance the performance and to open up new avenue for Mo in various industries. Therefore, it is the aim of the present work to study the nucleation and growth of diamond particles on Mo surface by employing microwave plasma CVD (MAPCVD). In the present work, diamond deposition was carried out in several stages by varying the deposition distance. The nucleation and growth rate were studied using scanning electron microscopy (SEM). In addition, the existence of diamond was verified by X-ray diffraction (XRD) analysis. It has been found that the nucleation and growth rate of diamond particles were influenced by the deposition height between the substrate and plasma. Under the optimum condition, well defined diamond crystallites distributed homogeneously throughout the surface, could be obtained. Some of the important parameters controlling the deposition and growth of diamond particles on Mo surface are discussed. (author)

  6. Stress analysis of CVD diamond window for ECH system

    International Nuclear Information System (INIS)

    Takahashi, Koji

    2001-03-01

    The stress analysis of a chemical vapor deposition (CVD) diamond window for Electron Cyclotron Heating and Current Drive (ECH/ECCD) system of fusion reactors is described. It was found that the real size diamond window (φ aper =70mm, t=2.25mm) withstood 14.5 atm. (1.45 MPa). The calculation results of the diamond window by ABAQUS code agree well with the results of the pressure test. The design parameters of the torus diamond window for a vacuum and a safety barrier were also obtained. (author)

  7. CVD diamond sensor for UV-photon detection

    CERN Document Server

    Periale, L; Gervino, G; Lamarina, A M; Palmisano, C; Periale, R; Picchi, P

    2012-01-01

    A new generation of UV photosensors, based on single crystal Chemical Vapour Deposition (CVD) diamonds to work optically coupled with large volume two-phase liquid-Ar (LAr) or liquid-Xe (LXe) detectors nowadays under design for the next generation of WIMPs experiments, is under development. Preliminary tests and first calibrations show these devices can have better performance than the existing UV sensitive detectors (higher photosensitivity and better signal-to-noise ratio). I-V characteristics, dark current measurements, linearity response to X-ray irradiation, and alpha-particle energy resolution are reported and discussed. (C) 2011 Elsevier B.V. All rights reserved.

  8. CVD Graphene/Ni Interface Evolution in Sulfuric Electrolyte

    DEFF Research Database (Denmark)

    Yivlialin, Rossella; Bussetti, Gianlorenzo; Duò, Lamberto

    2018-01-01

    Systems comprising single and multilayer graphene deposited on metals and immersed in acid environments have been investigated, with the aim of elucidating the mechanisms involved, for instance, in hydrogen production or metal protection from corrosion. In this work, a relevant system, namely...... chemical vapor deposited (CVD) multilayer graphene/Ni (MLGr/Ni), is studied when immersed in a diluted sulfuric electrolyte. The MLGr/Ni electrochemical and morphological properties are studied in situ and interpreted in light of the highly oriented pyrolytic graphite (HOPG) electrode behavior, when...... immersed in the same electrolyte. Following this interpretative framework, the dominant role of the Ni substrate in hydrogen production is clarified....

  9. Propriedades estruturais e térmicas de vidros teluretos 20Li2O-80TeO2 Structural and thermal properties of tellurite 20Li2O-80TeO2 glasses

    Directory of Open Access Journals (Sweden)

    E. Idalgo

    2007-09-01

    Full Text Available O presente trabalho reporta estudos sobre a cristalização em vidros teluretos 20Li2O-80TeO2 induzida a partir de tratamentos térmicos realizados sobre vidros com tamanho de partículas entre 38 µm e 75 µm. Estes estudos foram conduzidos em duas matrizes vítreas tratadas e não tratadas termicamente para aliviar as tensões após o quenching, utilizando-se de forma combinada às técnicas de difração de raios X, calorimetria diferencial de varredura e espectroscopia no infravermelho. Os resultados revelaram a presença de três fases cristalinas distintas durante o processo de cristalização e apontaram para uma hierarquia tal que as fases alfa-TeO2 e gama-TeO2 cristalizam-se antecipadamente à fase Li2Te2O5 no vidro 20Li2O-80TeO2 sujeito a tensões mecânicas induzidas durante a síntese. No vidro 20Li2O-80TeO2, livre de tensões mecânicas, não foi possível discriminar esta hierarquia de cristalização.This work report crystallization studies on tellurite 20Li2O-80TeO2 glasses induced from heat thermal annealing on glasses with particle size between 38 µm and 75 µm. These studies were conducted on two glass matrix heat thermal annealed and non-annealed to remove the stress after the quenching, by using the X-Ray diffraction analysis, Fourier transform infrared spectroscopy and differential scanning calorimetry techniques. The results shown the presence of three distinct crystalline alpha-TeO2, gamma-TeO2 and Li2Te2O5 phases during the crystallization process, suggesting a crystallization hierarchy on the glass matrix under stress, since the gamma-TeO2 and alpha-TeO2 phases crystallization occurs before the Li2Te2O5 phase. On the glass stress free, this crystallization hierarchy was not clearly determined.

  10. Effects of Light Intensity Activity on CVD Risk Factors: A Systematic Review of Intervention Studies

    Directory of Open Access Journals (Sweden)

    Romeo B. Batacan

    2015-01-01

    Full Text Available The effects of light intensity physical activity (LIPA on cardiovascular disease (CVD risk factors remain to be established. This review summarizes the effects of LIPA on CVD risk factors and CVD-related markers in adults. A systematic search of four electronic databases (PubMed, Academic Search Complete, SPORTDiscus, and CINAHL examining LIPA and CVD risk factors (body composition, blood pressure, glucose, insulin, glycosylated hemoglobin, and lipid profile and CVD-related markers (maximal oxygen uptake, heart rate, C-reactive protein, interleukin-6, tumor necrosis factor-alpha, and tumor necrosis factor receptors 1 and 2 published between 1970 and 2015 was performed on 15 March 2015. A total of 33 intervention studies examining the effect of LIPA on CVD risk factors and markers were included in this review. Results indicated that LIPA did not improve CVD risk factors and CVD-related markers in healthy individuals. LIPA was found to improve systolic and diastolic blood pressure in physically inactive populations with a medical condition. Reviewed studies show little support for the role of LIPA to reduce CVD risk factors. Many of the included studies were of low to fair study quality and used low doses of LIPA. Further studies are needed to establish the value of LIPA in reducing CVD risk.

  11. Examination of adhesion layer of TeO2 film with indented platinum substrate after radiation loading by 13 MeV deuterons

    International Nuclear Information System (INIS)

    Garapatskij, A.A.; Troyan, P.E.

    2011-01-01

    In this work the influence of a corrugated surface of a Pt substrate on the quality of thermal contact of an adhesion layer with a material of different compositions of TeO 2 and Al 2 O 3 when bombing a target by a 20 µA, 13.7 MeV deuteron beam has been studied. Before the irradiation a Raman spectrum of the TeO 2 +4%Al 2 O 3 material had a fuzzy contour, what corresponds to a polycrystalline composition or glass, but after the irradiation the spectrum has distinct Raman peaks which relate to the α-phase. In Raman spectrums for TeO 2 , containing α-phase peaks, essential changes were not observed after the irradiation. However, the glassy structure was formed in the target’s central part. Studies have shown good thermal contact of TeO 2 with the surface of a Pt substrate, processed by the offered technique. It allows to manage without addition of Al 2 O 3 and to carry out the target irradiation without loss of TeO 2 . (authors)

  12. Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2 : Large area, thickness control and tuneable morphology

    NARCIS (Netherlands)

    Sharma, A.; Verheijen, M.A.; Wu, L.; Karwal, S.; Vandalon, V.; Knoops, H.C.M.; Sundaram, R.S.; Hofmann, J.P.; Kessels, W.M.M.; Bol, A.A.

    2018-01-01

    Low-temperature controllable synthesis of monolayer-to-multilayer thick MoS2 with tuneable morphology is demonstrated by using plasma enhanced atomic layer deposition (PEALD). The characteristic self-limiting ALD growth with a growth-per-cycle of 0.1 nm per cycle and digital thickness control down

  13. Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides

    NARCIS (Netherlands)

    Pandraud, G.; Margallo-Balbas, E.; Sarro, P.M.

    2012-01-01

    We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a

  14. Evaluation of tetraethoxysilane (TEOS) sol–gel coatings, modified with green synthesized zinc oxide nanoparticles for combating microfouling

    Energy Technology Data Exchange (ETDEWEB)

    Krupa, A. Nithya Deva; Vimala, R., E-mail: vimala.r@vit.ac.in

    2016-04-01

    Green synthesis of zinc oxide nanoparticles (ZnO-NPs) is gaining importance as an eco-friendly alternative to conventional methods due to its enormous applications. The present work reports the synthesis of ZnO-NPs using the endosperm of Cocos nucifera (coconut water) and the bio-molecules responsible for nanoparticle formation have been identified. The synthesized nanoparticles were characterized using UV–Visible spectroscopy (UV–Vis), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Transmission Electron Microscopy (TEM) and Zeta potential measurement. The results obtained reveal that the synthesized nanoparticles are moderately stable with the size ranging from 20 to 80 nm. The bactericidal effect of the nanoparticles was proved by well diffusion assay and determination of minimum inhibitory concentration (MIC) against marine biofilm forming bacteria. Further the green synthesized ZnO-NPs were doped with TEOS sol–gels (TESGs) in order to assess their antimicrofouling capability. Different volumes of liquid sol–gels were coated on to 96-well microtitre plate and cured under various conditions. The optimum curing conditions were found to be temperature 60 °C, time 72 h and volume 200 μl. Antiadhesion test of the undoped (SG) and ZnO-NP doped TEOS sol–gel (ZNSG) coatings were evaluated using marine biofilm forming bacteria. ZNSG coatings exhibited highest biofilm inhibition (89.2%) represented by lowest OD value against Pseudomonasotitidis strain NV1. - Highlights: • The study reports low cost, and simple procedure for the synthesis of ZnO-NPs using coconut water. • XRD result shows the high crystalline nature of the synthesized ZnO-NPs. • TEM and zeta potential distribution confirms the nanostructure, stability of the synthesized ZnO-NPs. • ZnO-NPs doped with TEOS sol¬-gels (TESGs) exhibited excellent antimicrofouling activity.

  15. CVD-graphene growth on different polycrystalline transition metals

    Directory of Open Access Journals (Sweden)

    M. P. Lavin-Lopez

    2017-01-01

    Full Text Available The chemical vapor deposition (CVD graphene growth on two polycrystalline transition metals (Ni and Cu was investigated in detail using Raman spectroscopy and optical microscopy as a way to synthesize graphene of the highest quality (i.e. uniform growth of monolayer graphene, which is considered a key issue for electronic devices. Key CVD process parameters (reaction temperature, CH4/H2flow rate ratio, total flow of gases (CH4+H2, reaction time were optimized for both metals in order to obtain the highest graphene uniformity and quality. The conclusions previously reported in literature about the performance of low and high carbon solubility metals in the synthesis of graphene and their associated reaction mechanisms, i.e. surface depositionand precipitation on cooling, respectively, was not corroborated by the results obtained in this work. Under the optimal reaction conditions, a large percentage of monolayer graphene was obtained over the Ni foil since the carbon saturation was not complete, allowing carbon atoms to be stored in the bulk metal, which could diffuse forming high quality monolayer graphene at the surface. However, under the optimal reaction conditions, the formation of a non-uniform mixture of few layers and multilayer graphene on the Cu foil was related to the presence of an excess of active carbon atoms on the Cu surface.

  16. Oxide Dispersion Strengthened Iron Aluminide by CVD Coated Powders

    Energy Technology Data Exchange (ETDEWEB)

    Asit Biswas Andrew J. Sherman

    2006-09-25

    This I &I Category2 program developed chemical vapor deposition (CVD) of iron, aluminum and aluminum oxide coated iron powders and the availability of high temperature oxidation, corrosion and erosion resistant coating for future power generation equipment and can be used for retrofitting existing fossil-fired power plant equipment. This coating will provide enhanced life and performance of Coal-Fired Boilers components such as fire side corrosion on the outer diameter (OD) of the water wall and superheater tubing as well as on the inner diameter (ID) and OD of larger diameter headers. The program also developed a manufacturing route for readily available thermal spray powders for iron aluminide coating and fabrication of net shape component by powder metallurgy route using this CVD coated powders. This coating can also be applid on jet engine compressor blade and housing, industrial heat treating furnace fixtures, magnetic electronic parts, heating element, piping and tubing for fossil energy application and automotive application, chemical processing equipment , heat exchanger, and structural member of aircraft. The program also resulted in developing a new fabrication route of thermal spray coating and oxide dispersion strengthened (ODS) iron aluminide composites enabling more precise control over material microstructures.

  17. A study of the thermoluminescent properties of CVD diamond detectors

    International Nuclear Information System (INIS)

    Marczewska, B.; Bilski, P.; Olko, P.; Rebisz, M.; Nesladek, M.; Waligorski, M.P.R.

    2002-01-01

    A batch of 20 diamond detectors obtained by the chemical vapour deposition (CVD) method at the Institute for Materials Research at the Limburg University, Belgium, was investigated with respect to their thermoluminescent (TL) properties. The investigated detectors demonstrate TL sensitivity similar to that of the standard LiF:Mg, Ti (MTS) thermoluminescent detectors, lack of fading after two weeks from irradiation and apparent linearity of dose response. In spite of the persistent fluctuation of individual detector sensitivity observed in this batch, a new annealing procedure improved the stability of the TL signal. It has been concluded that 1 h annealing at 350 C assures the highest reproducibility for this set of detectors. A 30% discrepancy of the value of the TL signal between individual detectors from the batch may be caused by non-uniform distribution of dopants in the volume of the CVD diamond. A prototype of a planar TL reader equipped with a CCD camera was employed in this investigation. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  18. Thermoluminescence in CVD diamond films: application to actinometric dosimetry

    International Nuclear Information System (INIS)

    Barboza-Flores, M.; Melendrez, R.; Chernov, V.; Castaneda, B.; Pedroza-Montero, M.; Gan, B.; Ahn, J.; Zhang, Q.; Yoon, S.F.

    2002-01-01

    Diamond is considered a tissue-equivalent material since its atomic number (Z=6) is close to the effective atomic number of biological tissue (Z=7.42). Such a situation makes it suitable for radiation detection purposes in medical applications. In the present work the analysis is reported of the thermoluminescence (TL) and dosimetric features of chemically vapour deposited (CVD) diamond film samples subjected to ultraviolet (UV) irradiation in the actinometric region. The TL glow curve shows peaks at 120, 220, 320 and 370 deg. C. The 120 and 370 deg. C peaks are too weak and the first one fades away in a few seconds after exposure. The overall room temperature fading shows a 50% TL decay 30 min after exposure. The 320 deg. C glow peak is considered to be the most adequate for dosimetric applications due to its low fading and linear TL behaviour as a function of UV dose in the 180-260 nm range. The TL excitation spectrum presents a broad band with at least two overlapped components around 205 and 220 nm. The results indicate that the TL behaviour of CVD diamond film can be a good alternative to the currently available dosemeter and detector in the actinometric region as well as in clinical and medical applications. (author)

  19. VOx effectively doping CVD-graphene for transparent conductive films

    Science.gov (United States)

    Ji, Qinghua; Shi, Liangjing; Zhang, Qinghong; Wang, Weiqi; Zheng, Huifeng; Zhang, Yuzhi; Liu, Yangqiao; Sun, Jing

    2016-11-01

    Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VOx doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86-90%. The optimized VOx-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VOx can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VOx species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VOx doped graphene is expected to be a promising candidate for transparent conductive film purposes.

  20. Management of Hypertension and Other CVD Risk Factors in Egypt

    Directory of Open Access Journals (Sweden)

    Mostafa A. Abolfotouh

    2011-01-01

    Full Text Available Aim. To assess the knowledge and practice of PHC physicians toward the detection and management of hypertension (HTN and other CVD risk factors. Methods. A cross-sectional study of all primary health care physicians of the FHU of three rural districts of Egypt was conducted. Each physician was subjected to a prevalidated interview questionnaire on the WHO-CVD risk management package for low and medium resources, and a checklist of observation of daily practices. Results. Hypertension was a priority problem in about two-thirds (62.9% of physicians, yet only 19% have guidelines for HTN patients. Clinical history recording system for HNT was available for 50% of physicians. Levels of knowledge varied with regard to definition of HTN (61.3%, fair, procedures for BP measurement (43.5%, poor, indications for referral (43.5%, poor, patient counseling (61.3%, fair, patient treatment (59.8%, fair. Availability of clinical history recording system for HNT was a significant predictor for physician's level of knowledge (P=0.001. Overall level of practice was fair (68.5%. Conclusion. PHC physicians have unsatisfactory knowledge and practice on hypertension. There is a need of more continuing medical education. Local and international manuals, workshops, and seminars on how to make use of these guidelines would improve doctors' performance.

  1. Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

    International Nuclear Information System (INIS)

    Kim, Hyung Keun; Jung, Jin Hwan; Choi, Doo Jin

    2012-01-01

    To meet increasing demands for chemical vapor deposition methods for high performance phase-change memory, cyclic plasma enhanced chemical vapor deposition of Sb and Ge x Sb y phase-change films and characterization of their properties were performed. Two cycle sequences were designed to investigate the role of hydrogen gas as a reduction gas during Sb film deposition. Hydrogen gas was not introduced into the reaction chamber during the purge step in cycle sequence A and was introduced during the purge step for cycle sequence B. The role of hydrogen gas was investigated by comparing the results obtained from these two cycle sequences and was concluded to exert an effect by a combination of precursor decomposition, surface maintenance as a hydrogen termination agent, and surface etching. These roles of hydrogen gas are discussed through consideration of changes in deposition rates, the oxygen concentration on the surface of the Sb film, and observations of film surface morphology. Based on these results, Ge x Sb y phase-change films were deposited with an adequate flow rate of hydrogen gas. The Ge and Sb composition of the film was controlled with the designed cycle sequences. A strong oxygen affinity for Ge was observed during the X-ray photoelectron spectroscopy analysis of Sb 3d, Sb 4d, and Ge 3d orbitals. Based on the XPS results, the ratios of Ge to Sb were calculated to be Ge 0.32 Sb 0.68 , Ge 0.38 Sb 0.62 , Ge 0.44 Sb 0.56 , Ge 0.51 Sb 0.49 and Ge 0.67 Sb 0.33 for the G1S7, G1S3, G1S2, G1S1, and G2S1 cycles, respectively. Crystal structures of Sb, Ge, and the GeSb metastable phase were observed with various Ge x Sb y film compositions. Sb crystallinity decreased with respect to Ge crystallinity by increasing the Ge fraction. A current–voltage curve was introduced, and an electro-switching phenomenon was clearly generated at a typical voltage, V th . V th values increased in conjunction with an increased proportion of Ge. The Sb crystallinity decrease and V

  2. Prevalence of undiagnosed cardiovascular risk factors and 10-year CVD risk in male steel industry workers.

    Science.gov (United States)

    Gray, Benjamin J; Bracken, Richard M; Turner, Daniel; Morgan, Kerry; Mellalieu, Stephen D; Thomas, Michael; Williams, Sally P; Williams, Meurig; Rice, Sam; Stephens, Jeffrey W

    2014-05-01

    To assess the prevalence of undiagnosed cardiovascular disease (CVD) in a cohort of male steelworkers in South Wales, UK. Male steel industry workers (n = 221) with no prior diagnosis of CVD or diabetes accepted a CVD risk assessment within the work environment. Demographic, anthropometric, family, and medical histories were all recorded and capillary blood samples obtained. The 10-year CVD risk was predicted using the QRISK2-2012 algorithm. Up to 81.5% of workers were either overweight or obese. More than 20% of workers were found to have diastolic hypertension, high total cholesterol, and/or a total cholesterol/high-density lipoprotein ratio of six or more. Over one quarter of workers assessed had an increased 10-year CVD risk. Despite a physically demanding occupation, risk assessment in the workplace uncovered significant occult factors in CVD risk in a sample of male heavy industry workers.

  3. Thermal Analysis of Cold Vacuum Drying (CVD) of Spent Nuclear Fuel (SNF)

    International Nuclear Information System (INIS)

    PIEPHO, M.G.

    2000-01-01

    The thermal analysis examined transient thermal and chemical behavior of the Multi-Canister Overpack (MCO) container for a broad range of cases that represent the Cold Vacuum Drying (CVD) processes. The cases were defined to consider both normal and off-normal operations at the CVD Facility for an MCO with N Reactor spent fuel. This analysis provides the basis for the MCO thermal behavior at the CVD Facility in support of the safety basis documentation

  4. A measure of the interfacial shear strength between SiC(CVD)/B(CVD) filament--aluminum matrix by fragmentation method

    International Nuclear Information System (INIS)

    Jiang, Y.Q.; Chen, X.J.; Yang, D.M.; Fei, X.; Pan, J.

    1993-01-01

    The tensile specimens used are of dog-bone shape and consist of single axial SiC (CVD) /B (CVD) filament processed by CVD and embedded in a LD-2 aluminum alloy. Model composite specimens have been fabricated by a high pressure squeeze casting technique. This paper describes the application of an Acoustic Emission Technique for locating the position of fiber breaks and thus determining the length distribution of fiber fragments resulting when a composite specimen containing a single fiber is loaded to failure. The critical lengths (minimal lengths) are checked by Corrosion Method

  5. Growth and Characteristic of Amorphous Nano-Granular TeO2-V2O5-NiO Thin Films

    Science.gov (United States)

    Hosseinzadeh, Sh.; Rahmati, A.; Bidadi, H.

    2016-12-01

    TeO2-V2O5-NiO thin films were deposited using thermal evaporation from 40TeO2-(60-y)V2O5-yNiO (y=0-30mol%) target. Structural analysis of the films was identified by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The amorphous TeO2-V2O5-NiO films have nanosized clear grain structure and sharp grain boundaries. DC conductivity and current-voltage (I-V) characteristic of TeO2-V2O5-NiO thin films were measured in the temperature range of 300-423K. As nickel oxide (NiO) content increases, the DC conductivity decreases up to two orders in value (10-9-10-11Sṡcm-1). Temperature dependence of conductivity is described using the small polaron hopping (SPH) model as well. Poole-Frenkel effect is observed at high external electric field. The optical absorption spectra of the TeO2-V2O5-NiO thin films were recorded in the wavelength range of 380-1100nm. The absorption coefficient revealed bandgap shrinkage (3.01-2.3eV) and band tail widening, due to an increase in NiO content. Energy dispersive X-ray spectroscopy (EDX) was used to determine elemental composition. In TeO2-V2O5-NiO thin films, the NiO content is around fifth of the initial target.

  6. In vitro genotoxicity assessment of MTES, GPTES and TEOS, three precursors intended for use in food contact coatings.

    Science.gov (United States)

    Lionti, Krystelle; Séverin, Isabelle; Dahbi, Laurence; Toury, Bérangère; Chagnon, Marie-Christine

    2014-03-01

    Organoalkoxysilanes are precursors that are used increasingly in the synthesis of food contact coatings. To comply with the EU regulation, their potential toxicity must be assessed, and very little information is known. The genotoxicity of three common precursors was studied, namely, tetraethylorthosilicate (TEOS), methyltriethoxysilane (MTES) and 3-glycidyloxypropyltriethoxysilane (GPTES). By the Ames test, MTES and TEOS were not mutagenic for bacteria. A significant positive response was observed with GPTES in the TA100 and TA1535 strains. The mutagenic effect was more pronounced in the presence of the exogenous metabolic activation system with an increase of the induction factor (ten-fold higher for the TA1535 strain). In the micronucleus assay performed with a human hepatoma cell line (HepG2 cells), GPTES gave negative results even in the presence of an exogenous activation system. To ascertain the possibility of using this precursor in food contact material, its migration must be monitored according to the coating formulation because migration might result in hazardous human exposure. Copyright © 2014. Published by Elsevier Ltd.

  7. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Chen, W. Z. [Quanzhou Normal University, Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics & Information Engineering (China); Wang, B. B. [Chongqing University of Technology, College of Chemical Engineering (China); Qu, Y. Z.; Huang, X. [Xiamen University, College of Energy, Xiang’an Campus (China); Ostrikov, K. [Queensland University of Technology, School of Chemistry, Physics and Mechanical Engineering (Australia); Levchenko, I.; Xu, S. [Nanyang Technological University, Plasma Sources and Applications Centre, National Institute of Education (Singapore); Cheng, Q. J., E-mail: qijin.cheng@xmu.edu.cn [Xiamen University, College of Energy, Xiang’an Campus (China)

    2017-03-15

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O{sub 2}-Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440–484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  8. Controlled growth of carbon nanofibers using plasma enhanced chemical vapor deposition: Effect of catalyst thickness and gas ratio

    International Nuclear Information System (INIS)

    Saidin, M.A.R.; Ismail, A.F.; Sanip, S.M.; Goh, P.S.; Aziz, M.; Tanemura, M.

    2012-01-01

    The characteristics of carbon nanofibers (CNFs) grown, using direct current plasma enhanced chemical vapor deposition system reactor under various acetylene to ammonia gas ratios and different catalyst thicknesses were studied. Nickel/Chromium-glass (Ni/Cr-glass) thin film catalyst was employed for the growth of CNF. The grown CNFs were then characterized using Raman spectroscopy, field emission scanning electron microscopy and transmission electron microscopy (TEM). Raman spectroscopy showed that the Ni/Cr-glass with thickness of 15 nm and gas ratio acetylene to ammonia of 1:3 produced CNFs with the lowest I D /I G value (the relative intensity of D-band to G-band). This indicated that this catalyst thickness and gas ratio value is the optimum combination for the synthesis of CNFs under the conditions studied. TEM observation pointed out that the CNFs produced have 104 concentric walls and the residual catalyst particles were located inside the tubes of CNFs. It was also observed that structural morphology of the grown CNFs was influenced by acetylene to ammonia gas ratio and catalyst thickness.

  9. Controlled growth of carbon nanofibers using plasma enhanced chemical vapor deposition: Effect of catalyst thickness and gas ratio

    Energy Technology Data Exchange (ETDEWEB)

    Saidin, M.A.R. [Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Ismail, A.F., E-mail: afauzi@utm.my [Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Sanip, S.M.; Goh, P.S.; Aziz, M. [Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Tanemura, M. [Department of Frontier Material, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2012-01-31

    The characteristics of carbon nanofibers (CNFs) grown, using direct current plasma enhanced chemical vapor deposition system reactor under various acetylene to ammonia gas ratios and different catalyst thicknesses were studied. Nickel/Chromium-glass (Ni/Cr-glass) thin film catalyst was employed for the growth of CNF. The grown CNFs were then characterized using Raman spectroscopy, field emission scanning electron microscopy and transmission electron microscopy (TEM). Raman spectroscopy showed that the Ni/Cr-glass with thickness of 15 nm and gas ratio acetylene to ammonia of 1:3 produced CNFs with the lowest I{sub D}/I{sub G} value (the relative intensity of D-band to G-band). This indicated that this catalyst thickness and gas ratio value is the optimum combination for the synthesis of CNFs under the conditions studied. TEM observation pointed out that the CNFs produced have 104 concentric walls and the residual catalyst particles were located inside the tubes of CNFs. It was also observed that structural morphology of the grown CNFs was influenced by acetylene to ammonia gas ratio and catalyst thickness.

  10. Effects of Pretreatment on the Electronic Properties of Plasma Enhanced Chemical Vapor Deposition Hetero-Epitaxial Graphene Devices

    Science.gov (United States)

    Zhang, Lian-Chang; Shi, Zhi-Wen; Yang, Rong; Huang, Jian

    2014-09-01

    Quasi-monolayer graphene is successfully grown by the plasma enhanced chemical vapor deposition heteroepitaxial method we reported previously. To measure its electrical properties, the prepared graphene is fabricated into Hall ball shaped devices by the routine micro-fabrication method. However, impurity molecules adsorbed onto the graphene surface will impose considerable doping effects on the one-atom-thick film material. Our experiment demonstrates that pretreatment of the device by heat radiation baking and electrical annealing can dramatically influence the doping state of the graphene and consequently modify the electrical properties. While graphene in the as-fabricated device is highly p-doped, as confirmed by the position of the Dirac point at far more than +60 V, baking treatment at temperatures around 180°C can significantly lower the doping level and reduce the conductivity. The following electrical annealing is much more efficient to desorb the extrinsic molecules, as confirmed by the in situ measurement, and as a result, further modify the doping state and electrical properties of the graphene, causing a considerable drop of the conductivity and a shifting of Dirac point from beyond +60 V to 0 V.

  11. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    International Nuclear Information System (INIS)

    Chen, W. Z.; Wang, B. B.; Qu, Y. Z.; Huang, X.; Ostrikov, K.; Levchenko, I.; Xu, S.; Cheng, Q. J.

    2017-01-01

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O 2 -Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440–484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  12. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Bollani, M; Fedorov, A; Chrastina, D; Sordan, R; Picco, A; Bonera, E

    2010-01-01

    Si 1-x Ge x islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si 1-x Ge x islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s -1 ) and low temperature (650 deg. C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

  13. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

    Science.gov (United States)

    Bollani, M; Chrastina, D; Fedorov, A; Sordan, R; Picco, A; Bonera, E

    2010-11-26

    Si(1-x)Ge(x) islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si(1-x)Ge(x) islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s(-1)) and low temperature (650 °C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

  14. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J., E-mail: jprovine@stanford.edu; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Kim, Ki-Hyun [Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-06-15

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

  15. Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

    Energy Technology Data Exchange (ETDEWEB)

    Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

    2016-01-15

    It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

  16. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Oliveira, M. H.; Viana, G. A.; de Lima, M. M.; Cros, A.; Cantarero, A.; Marques, F. C.

    2010-12-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH4) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  17. Fabrication of TiO_2-modified polytetrafluoroethylene ultrafiltration membranes via plasma-enhanced surface graft pretreatment

    International Nuclear Information System (INIS)

    Qian, Yingjia; Chi, Lina; Zhou, Weili; Yu, Zhenjiang; Zhang, Zhongzhi; Zhang, Zhenjia; Jiang, Zheng

    2016-01-01

    Graphical abstract: - Highlights: • Multifunctional TiO_2/PAA/PTFE ultrafiltration membrane was fabricated via tight coating of TiO_2 functional layer onto the plasma-assisted graft of PAA on PTFE. • The high water flux rate, remarkable enhanced ultrafiltration performance and excellent self-cleaning ability were demonstrated. • The formation of COO−Ti bidentate coordination between TiO_2 and PAA was responsible for the successful coating. - Abstract: Surface hydrophilic modification of polymer ultrafiltration membrane using metal oxide represents an effective yet highly challenging solution to improve water flux and antifouling performance. Via plasma-enhanced graft of poly acryl acid (PAA) prior to coating TiO_2, we successfully fixed TiO_2 functional thin layer on super hydrophobic polytetrafluoroethylene (PTFE) ultrafiltration (UF) membranes. The characterization results evidenced TiO_2 attached on the PTFE-based UF membranes through the chelating bidentate coordination between surface-grafted carboxyl group and Ti"4"+. The TiO_2 surface modification may greatly reduce the water contact angle from 115.8° of the PTFE membrane to 35.0° without degradation in 30-day continuous filtration operations. The novel TiO_2/PAA/PTFE membranes also exhibited excellent antifouling and self-cleaning performance due to the intrinsic hydrophilicity and photocatalysis properties of TiO_2, which was further confirmed by the photo-degradation of MB under Xe lamp irradiation.

  18. Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via

    Science.gov (United States)

    Li, Yunlong; Suhard, Samuel; Van Huylenbroeck, Stefaan; Meersschaut, Johan; Van Besien, Els; Stucchi, Michele; Croes, Kristof; Beyer, Gerald; Beyne, Eric

    2017-12-01

    A Through Silicon Via (TSV) is a key component for 3D integrated circuit stacking technology, and the diameter of a TSV keeps scaling down to reduce the footprint in silicon. The TSV aspect ratio, defined as the TSV depth/diameter, tends to increase consequently. Starting from the aspect ratio of 10, to improve the TSV sidewall coverage and reduce the process thermal budget, the TSV dielectric liner deposition process has evolved from sub-atmospheric chemical vapour deposition to plasma-enhanced atomic layer deposition (PE-ALD). However, with this change, a strong negative shift in the flatband voltage is observed in the capacitance-voltage characteristic of the vertical metal-oxide-semiconductor (MOS) parasitic capacitor formed between the TSV copper metal and the p-Si substrate. And, no shift is present in planar MOS capacitors manufactured with the same PE-ALD oxide. By comparing the integration process of these two MOS capacitor structures, and by using Elastic Recoil Detection to study the elemental composition of our films, it is found that the origin of the negative flatband voltage shift is the positive charge trapping at the Si/SiO2 interface, due to the positive PE-ALD reactants confined to the narrow cavity of high aspect ratio TSVs. This interface charge trapping effect can be effectively mitigated by high temperature annealing. However, this is limited in the real process due to the high thermal budget. Further investigation on liner oxide process optimization is needed.

  19. A simple method to deposit palladium doped SnO2 thin films using plasma enhanced chemical vapor deposition technique

    International Nuclear Information System (INIS)

    Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

    2010-01-01

    This work presents a simple method to deposit palladium doped tin oxide (SnO 2 ) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl 4 ) was used as precursor and oxygen (O 2 , 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C 5 HF 6 O 2 ) 2 ) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd 2 Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

  20. Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

    International Nuclear Information System (INIS)

    Jeon, Ki-Moon; Shin, Jae-Su; Yun, Ju-Young; Jun Lee, Sang; Kang, Sang-Woo

    2014-01-01

    The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO 2 thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr) 3 SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO 2 films at temperatures as low as 50 °C without carbon impurities. In addition, films obtained with plasma ignition times of 3 s and 10 s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO 2 films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS

  1. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Oliveira, M. H. Jr.; Viana, G. A.; Marques, F. C.; Lima, M. M. Jr. de; Cros, A.; Cantarero, A.

    2010-01-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH 4 ) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  2. Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO{sub 2}/TiN stacks

    Energy Technology Data Exchange (ETDEWEB)

    Chernikova, A. G.; Kuzmichev, D. S.; Negrov, D. V.; Kozodaev, M. G.; Markeev, A. M. [Moscow Institute of Physics and Technology, Institutskii per. 9, 141700 Dolgoprudny, Moscow Region (Russian Federation); Polyakov, S. N. [Technological Institute for Superhard and Novel Carbon Materials, Tsentral' naya Str. 7a, 142190 Troitsk, Moscow (Russian Federation)

    2016-06-13

    We report the possibility of employment of low temperature (≤330 °C) plasma-enhanced atomic layer deposition for the formation of both electrodes and hafnium-oxide based ferroelectric in the metal-insulator-metal structures. The structural and ferroelectric properties of La doped HfO{sub 2}-based layers and its evolution with the change of both La content (2.1, 3.7 and 5.8 at. %) and the temperature of the rapid thermal processing (550–750 °C) were investigated in detail. Ferroelectric properties emerged only for 2.1 and 3.7 at. % of La due to the structural changes caused by the given doping levels. Ferroelectric properties were also found to depend strongly on annealing temperature, with the most robust ferroelectric response for lowest La concentration and intermediate 650 °C annealing temperature. The long term wake-up effect and such promising endurance characteristics as 3 × 10{sup 8} switches by bipolar voltage cycles with 30 μs duration and ± 3 MV/cm amplitude without any decrease of remnant polarization value were demonstrated.

  3. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  4. Coating of diamond-like carbon nanofilm on alumina by microwave plasma enhanced chemical vapor deposition process.

    Science.gov (United States)

    Rattanasatien, Chotiwan; Tonanon, Nattaporn; Bhanthumnavin, Worawan; Paosawatyanyong, Boonchoat

    2012-01-01

    Diamond-like carbon (DLC) nanofilms with thickness varied from under one hundred to a few hundred nanometers have been successfully deposited on alumina substrates by microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. To obtain dense continuous DLC nanofilm coating over the entire sample surface, alumina substrates were pre-treated to enhance the nucleation density. Raman spectra of DLC films on samples showed distinct diamond peak at around 1332 cm(-1), and the broad band of amorphous carbon phase at around 1550 cm(-1). Full width at half maximum height (FWHM) values indicated good formation of diamond phase in all films. The result of nano-indentation test show that the hardness of alumina samples increase from 7.3 +/- 2.0 GPa in uncoated samples to 15.8 +/- 4.5-52.2 +/- 2.1 GPa in samples coated with DLC depending on the process conditions. It is observed that the hardness values are still in good range although the thickness of the films is less than a hundred nanometer.

  5. Growth and characterization of stoichiometric BCN films on highly oriented pyrolytic graphite by radiofrequency plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mannan, Md. Abdul, E-mail: amannan75@yahoo.co [Department of Chemistry and Applied Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo, Saga 840-8502 (Japan); Synchrotron Radiation Research Unit, Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Noguchi, Hideyuki; Kida, Tetsuya; Nagano, Masamitsu [Department of Chemistry and Applied Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo, Saga 840-8502 (Japan); Hirao, Norie; Baba, Yuji [Synchrotron Radiation Research Unit, Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan)

    2010-05-31

    Hexagonal boron carbonitride (h-BCN) hybrid films have been synthesized on highly oriented pyrolytic graphite by radiofrequency plasma enhanced chemical vapor deposition using tris-(dimethylamino)borane as a single-source molecular precursor. The films were characterized by X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS) and Raman spectroscopic measurements. XPS measurement showed that the B atoms were bonded to C and N atoms to form the sp{sup 2}-B-C-N atomic hybrid chemical environment. The atomic composition estimated from the XPS of the typical sample was found to be almost B{sub 1}C{sub 1}N{sub 1}. NEXAFS spectra of the B K-edge and the N K-edge had the peaks due to the {pi}* and {sigma}* resonances of sp{sup 2} hybrid orbitals implying the existence of the sp{sup 2} hybrid configurations of h-BCN around the B atoms. The G band at 1592 and D band at 1352 cm{sup -1} in the Raman spectra also suggested the presence of the graphite-like sp{sup 2}-B-C-N atomic hybrid bonds. The films consisted of micrometer scale crystalline structure of around 10 {mu}m thick has been confirmed by the field emission scanning electron microscopy.

  6. Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Maheshwar Shrestha

    2018-03-01

    Full Text Available Low-temperature growth of microcrystalline silicon (mc-Si is attractive for many optoelectronic device applications. This paper reports a detailed comparison of optical properties, microstructure, and morphology of amorphous silicon (a-Si thin films crystallized by furnace annealing and flash lamp annealing (FLA at temperatures below the softening point of glass substrate. The initial a-Si films were grown by plasma enhanced chemical vapor deposition (PECVD. Reflectance measurement indicated characteristic peak in the UV region ~280 nm for the furnace annealed (>550 °C and flash lamp annealed films, which provided evidence of crystallization. The film surface roughness increased with increasing the annealing temperature as well as after the flash lamp annealing. X-ray diffraction (XRD measurement indicated that the as-deposited samples were purely amorphous and after furnace crystallization, the crystallites tended to align in one single direction (202 with uniform size that increased with the annealing temperature. On the other hand, the flash lamp crystalized films had randomly oriented crystallites with different sizes. Raman spectroscopy showed the crystalline volume fraction of 23.5%, 47.3%, and 61.3% for the samples annealed at 550 °C, 650 °C, and with flash lamp, respectively. The flash lamp annealed film was better crystallized with rougher surface compared to furnace annealed ones.

  7. Preparation of Hydrophobic Metal-Organic Frameworks via Plasma Enhanced Chemical Vapor Deposition of Perfluoroalkanes for the Removal of Ammonia

    Science.gov (United States)

    DeCoste, Jared B.; Peterson, Gregory W.

    2013-01-01

    Plasma enhanced chemical vapor deposition (PECVD) of perfluoroalkanes has long been studied for tuning the wetting properties of surfaces. For high surface area microporous materials, such as metal-organic frameworks (MOFs), unique challenges present themselves for PECVD treatments. Herein the protocol for development of a MOF that was previously unstable to humid conditions is presented. The protocol describes the synthesis of Cu-BTC (also known as HKUST-1), the treatment of Cu-BTC with PECVD of perfluoroalkanes, the aging of materials under humid conditions, and the subsequent ammonia microbreakthrough experiments on milligram quantities of microporous materials. Cu-BTC has an extremely high surface area (~1,800 m2/g) when compared to most materials or surfaces that have been previously treated by PECVD methods. Parameters such as chamber pressure and treatment time are extremely important to ensure the perfluoroalkane plasma penetrates to and reacts with the inner MOF surfaces. Furthermore, the protocol for ammonia microbreakthrough experiments set forth here can be utilized for a variety of test gases and microporous materials. PMID:24145623

  8. Fabrication of TiO2-modified polytetrafluoroethylene ultrafiltration membranes via plasma-enhanced surface graft pretreatment

    Science.gov (United States)

    Qian, Yingjia; Chi, Lina; Zhou, Weili; Yu, Zhenjiang; Zhang, Zhongzhi; Zhang, Zhenjia; Jiang, Zheng

    2016-01-01

    Surface hydrophilic modification of polymer ultrafiltration membrane using metal oxide represents an effective yet highly challenging solution to improve water flux and antifouling performance. Via plasma-enhanced graft of poly acryl acid (PAA) prior to coating TiO2, we successfully fixed TiO2 functional thin layer on super hydrophobic polytetrafluoroethylene (PTFE) ultrafiltration (UF) membranes. The characterization results evidenced TiO2 attached on the PTFE-based UF membranes through the chelating bidentate coordination between surface-grafted carboxyl group and Ti4+. The TiO2 surface modification may greatly reduce the water contact angle from 115.8° of the PTFE membrane to 35.0° without degradation in 30-day continuous filtration operations. The novel TiO2/PAA/PTFE membranes also exhibited excellent antifouling and self-cleaning performance due to the intrinsic hydrophilicity and photocatalysis properties of TiO2, which was further confirmed by the photo-degradation of MB under Xe lamp irradiation.

  9. Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Liu, Donghua; Chen, Xiaosong; Hu, Yibin; Sun, Tai; Song, Zhibo; Zheng, Yujie; Cao, Yongbin; Cai, Zhi; Cao, Min; Peng, Lan; Huang, Yuli; Du, Lei; Yang, Wuli; Chen, Gang; Wei, Dapeng; Wee, Andrew Thye Shen; Wei, Dacheng

    2018-01-15

    Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO 2 /Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 × 10 -9  mol L -1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics.

  10. Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

    Directory of Open Access Journals (Sweden)

    Jörg Haeberle

    2013-11-01

    Full Text Available We report on results on the preparation of thin (2O3 films on silicon substrates using thermal atomic layer deposition (T-ALD and plasma enhanced atomic layer deposition (PE-ALD in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

  11. Preparation and characterization of new glasses from the TeO2-CdO-Al2O3-SiO2 system

    OpenAIRE

    Zayas, Mª. E.; Espinoza-Beltrán, F. J.; Romero, Maximina; Rincón López, Jesús María

    1998-01-01

    A new family of glasses from the TeO2-CdO-Al2O3-SiO2 system obtained from CdS-TeO2 mixtures melted in fireclay crucibles have been prepared and characterized. The density values of these glasses are in the 3.30-3.46 gcm-3 range. The viscosity-temperature variation shows that glasses with high TeO2 content depict the typical variation of `short glasses' for a molding operation. Microstructural observations by TEM (replica method) and SEM microscopies have shown that these glasses contain very ...

  12. Studies of mono-crystalline CVD diamond pixel detectors

    CERN Document Server

    Bartz, E; Atramentov, O; Yang, Z; Hall-Wilton, R; Schnetzer, S; Patel, R; Bugg, W; Hebda, P; Halyo, V; Hunt, A; Marlow, D; Steininger, H; Ryjov, V; Hits, D; Spanier, S; Pernicka, M; Johns, W; Doroshenko, J; Hollingsworth, M; Harrop, B; Farrow, C; Stone, R

    2011-01-01

    The Pixel Luminosity Telescope (PLT) is a dedicated luminosity monitor, presently under construction, for the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC). It measures the particle flux in several three layered pixel diamond detectors that are aligned precisely with respect to each other and the beam direction. At a lower rate it also performs particle track position measurements. The PLTs mono-crystalline CVD diamonds are bump-bonded to the same readout chip used in the silicon pixel system in CMS. Mono-crystalline diamond detectors have many attributes that make them desirable for use in charged particle tracking in radiation hostile environments such as the LHC. In order to further characterize the applicability of diamond technology to charged particle tracking we performed several tests with particle beams that included a measurement of the intrinsic spatial resolution with a high resolution beam telescope. Published by Elsevier B.V.

  13. Oxidation kinetics of CVD silicon carbide and silicon nitride

    Science.gov (United States)

    Fox, Dennis S.

    1992-01-01

    The long-term oxidation behavior of pure, monolithic CVD SiC and Si3N4 is studied, and the isothermal oxidation kinetics of these two materials are obtained for the case of 100 hrs at 1200-1500 C in flowing oxygen. Estimates are made of lifetimes at the various temperatures investigated. Parabolic rate constants for SiC are within an order of magnitude of shorter exposure time values reported in the literature. The resulting silica scales are in the form of cristobalite, with cracks visible after exposure. The oxidation protection afforded by silica for these materials is adequate for long service times under isothermal conditions in 1-atm dry oxygen.

  14. Studies of mono-crystalline CVD diamond pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bugg, W. [University of Tennessee, Knoxville (United States); Hollingsworth, M., E-mail: mhollin3@utk.edu [University of Tennessee, Knoxville (United States); Spanier, S.; Yang, Z. [University of Tennessee, Knoxville (United States); Bartz, E.; Doroshenko, J.; Hits, D.; Schnetzer, S.; Stone, R.; Atramentov, O.; Patel, R.; Barker, A. [Rutgers University, Piscataway (United States); Hall-Wilton, R.; Ryjov, V.; Farrow, C. [CERN, Geneva (Switzerland); Pernicka, M.; Steininger, H. [HEPHY, Vienna (Austria); Johns, W. [Vanderbilt University, Nashville (United States); Halyo, V.; Harrop, B. [Princeton University, Princeton (United States); and others

    2011-09-11

    The Pixel Luminosity Telescope (PLT) is a dedicated luminosity monitor, presently under construction, for the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC). It measures the particle flux in several three layered pixel diamond detectors that are aligned precisely with respect to each other and the beam direction. At a lower rate it also performs particle track position measurements. The PLT's mono-crystalline CVD diamonds are bump-bonded to the same readout chip used in the silicon pixel system in CMS. Mono-crystalline diamond detectors have many attributes that make them desirable for use in charged particle tracking in radiation hostile environments such as the LHC. In order to further characterize the applicability of diamond technology to charged particle tracking we performed several tests with particle beams that included a measurement of the intrinsic spatial resolution with a high resolution beam telescope.

  15. Dimensionless Numbers Expressed in Terms of Common CVD Process Parameters

    Science.gov (United States)

    Kuczmarski, Maria A.

    1999-01-01

    A variety of dimensionless numbers related to momentum and heat transfer are useful in Chemical Vapor Deposition (CVD) analysis. These numbers are not traditionally calculated by directly using reactor operating parameters, such as temperature and pressure. In this paper, these numbers have been expressed in a form that explicitly shows their dependence upon the carrier gas, reactor geometry, and reactor operation conditions. These expressions were derived for both monatomic and diatomic gases using estimation techniques for viscosity, thermal conductivity, and heat capacity. Values calculated from these expressions compared well to previously published values. These expressions provide a relatively quick method for predicting changes in the flow patterns resulting from changes in the reactor operating conditions.

  16. Tests of Hercules/Ultramet CVD coatings in hot hydrogen

    International Nuclear Information System (INIS)

    Vanier, P.E.; Barletta, R.E.; Svandrlik, J.; Adams, J.

    1992-01-01

    The effort by Hercules and Ultramet to produce CVD NbC coatings, which protect carbon-carbon substrates from hot hydrogen, has had some success but with some limitations. The coatings increase the survival time at atmospheric pressure and low flow rate of hydrogen by about a factor of 40 over uncoated graphite at 3000 K. However, the grain structure is not stable at these temperatures, and after about 10--20 minutes, the coating is subject to rapid degradation by spalling in visible chunks. Further experiments would have to be performed to determine the effects of higher pressures and flow rates, for it is not clear how these factors would affect the survival time, considering that one of the main failure mechanisms is independent of the atmosphere

  17. Polycrystalline CVD diamond device level modeling for particle detection applications

    Science.gov (United States)

    Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

    2016-12-01

    Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

  18. CVD diamond Brewster window: feasibility study by FEM analyses

    Directory of Open Access Journals (Sweden)

    Vaccaro A.

    2012-09-01

    Full Text Available Chemical vapor deposition (CVD diamond windows are a crucial component in heating and current drive (H&CD applications. In order to minimize the amount of reflected power from the diamond disc, its thickness must match the desired beam wavelength, thus proper targeting of the plasma requires movable beam reflectors. This is the case, for instance, of the ITER electron cyclotron H&CD system. However, looking at DEMO, the higher heat loads and neutron fluxes could make the use of movable parts close to the plasma difficult. The issue might be solved by using gyrotrons able to tune the beam frequency to the desired resonance, but this concept requires transmission windows that work in a given frequency range, such as the Brewster window. It consists of a CVD diamond disc brazed to two copper cuffs at the Brewster angle. The brazing process is carried out at about 800°C and then the temperature is decreased down to room temperature. Diamond and copper have very different thermal expansion coefficients, therefore high stresses build up during the cool down phase that might lead to failure of the disc. Considering also the complex geometry of the window with the skewed position of the disc, analyses are required in the first place to check its feasibility. The cool down phase was simulated by FEM structural analyses for several geometric and constraint configurations of the window. A study of indirect cooling of the window by water was also performed considering a HE11 mode beam. The results are here reported.

  19. Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

    Science.gov (United States)

    1995-01-01

    Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

  20. Polycrystalline CVD diamond device level modeling for particle detection applications

    International Nuclear Information System (INIS)

    Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

    2016-01-01

    Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

  1. Organic solar cells using CVD-grown graphene electrodes

    International Nuclear Information System (INIS)

    Kim, Hobeom; Han, Tae-Hee; Lim, Kyung-Geun; Lee, Tae-Woo; Bae, Sang-Hoon; Ahn, Jong-Hyun

    2014-01-01

    We report on the development of flexible organic solar cells (OSCs) incorporating graphene sheets synthesized by chemical vapor deposition (CVD) as transparent conducting electrodes on polyethylene terephthalate (PET) substrates. A key barrier that must be overcome for the successful fabrication of OSCs with graphene electrodes is the poor-film properties of water-based poly(3,4-ethylenedioxythiphene):poly(styrenesulfonate) (PEDOT:PSS) when coated onto hydrophobic graphene surfaces. To form a uniform PEDOT:PSS film on a graphene surface, we added perfluorinated ionomers (PFI) to pristine PEDOT:PSS to create ‘GraHEL’, which we then successfully spin coated onto the graphene surface. We systematically investigated the effect of number of layers in layer-by-layer stacked graphene anode of an OSC on the performance parameters including the open-circuit voltage (V oc ), short-circuit current (J sc ), and fill factor (FF). As the number of graphene layers increased, the FF tended to increase owing to lower sheet resistance, while J sc tended to decrease owing to the lower light absorption. In light of this trade-off between sheet resistance and transmittance, we determined that three-layer graphene (3LG) represents the best configuration for obtaining the optimal power conversion efficiency (PCE) in OSC anodes, even at suboptimal sheet resistances. We finally developed efficient, flexible OSCs with a PCE of 4.33%, which is the highest efficiency attained so far by an OSC with CVD-grown graphene electrodes to the best of our knowledge. (paper)

  2. Universal Design: Supporting Students with Color Vision Deficiency (CVD) in Medical Education

    Science.gov (United States)

    Meeks, Lisa M.; Jain, Neera R.; Herzer, Kurt R.

    2016-01-01

    Color Vision Deficiency (CVD) is a commonly occurring condition in the general population. For medical students, it has the potential to create unique challenges in the classroom and clinical environments. Few studies have provided medical educators with comprehensive recommendations to assist students with CVD. This article presents a focused…

  3. Comparative X-ray photoelectron spectroscopy study of plasma enhanced chemical vapor deposition and micro pressure chemical vapor deposition of phosphorus silicate glass layers after rapid thermal annealing

    International Nuclear Information System (INIS)

    Beshkov, G.; Krastev, V.; Gogova, D.; Talik, E.; Adamies, M.

    2008-01-01

    In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e. in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (MPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 380 0 C and 420 0 C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide. (authors)

  4. Comparing XPS on bare and capped ZrN films grown by plasma enhanced ALD: Effect of ambient oxidation

    Science.gov (United States)

    Muneshwar, Triratna; Cadien, Ken

    2018-03-01

    In this article we compare x-ray photoelectron spectroscopy (XPS) measurements on bare- and capped- zirconium nitride (ZrN) films to investigate the effect of ambient sample oxidation on the detected bound O in the form of oxide ZrO2 and/or oxynitride ZrOxNy. ZrN films in both bare- and Al2O3/AlN capped- XPS samples were grown by plasma-enhanced atomic layer deposition (PEALD) technique using tetrakis dimethylamino zirconium (TDMAZr) precursor, forming gas (5% H2, rest N2) inductively coupled plasma (ICP), and as received research grade process gases under identical process conditions. Capped samples were prepared by depositing 1 nm thick PEALD AlN on ZrN, followed by additional deposition of 1 nm thick ALD Al2O3, without venting of ALD reactor. On bare ZrN sample at room temperature, spectroscopic ellipsometry (SE) measurements with increasing ambient exposure times (texp) showed a self-limiting surface oxidation with the oxide thickness (dox) approaching 3.7 ± 0.02 nm for texp > 120 min. In XPS data measured prior to sample sputtering (tsput = 0), ZrO2 and ZrOxNy were detected in bare- samples, whereas only ZrN and Al2O3/AlN from capping layer were detected in capped- samples. For bare-ZrN samples, appearance of ZrO2 and ZrOxNy up to sputter depth (dsput) of 15 nm in depth-profile XPS data is in contradiction with measured dox = 3.7 nm, but explained from sputtering induced atomic inter-diffusion within analyzed sample. Appearance of artifacts in the XPS spectra from moderately sputtered (dsput = 0.2 nm and 0.4 nm) capped-ZrN sample, provides an evidence to ion-bombardment induced modifications within analyzed sample.

  5. Obtention of selective membranes for water and hydrophobic liquids by plasma enhanced chemical vapor deposition on porous substrates

    International Nuclear Information System (INIS)

    Bankovic, P.; Demarquette, N.R.; Silva, M.L.P. da

    2004-01-01

    In this work, the possibility of obtaining selective membranes for water and hydrophobic liquids by plasma enhanced chemical vapor deposition (PECVD) of hexamethyldisilazane (HMDS) or double layers of HMDS and n-hexane on porous substrates using a capacitive plasma reactor was investigated. The porous substrates used were paper filter, diatomite and polyester textiles. The films were characterized by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and contact angle measurements. The membranes obtained were characterized by the Cobb test. Their efficiency to separate hydrocarbon compounds from water was evaluated through filtration experiments and Karl-Fischer titration tests. The reagents used in the filtration experiments were: chloroform, n-hexane, n-heptane, ethyl ether, benzene and diesel. XPS analysis showed that Si, N, C and O were present at the surface of the film. C peak was dominant in the double layer film spectra. C-H n , CH 2 , Si-H, Si-CH 3 , N-H, Si-CH 2 -Si, Si-N-Si and Si-C bonds were identified in both types of the films by ATR-FTIR. The relative intensities of the corresponding peaks in the two spectra were different. The XPS and FTIR results indicated that C was most likely present in a CH n form at the surface of double layer film. The average contact angles formed by drops of water on the film surface ranged from 135 deg. to 155 deg. . Water adsorption measured by Cobb test decreased from average values ranging from 300 to 9000 g m -2 (for nonmodified surfaces) to values ranging from 0 to 20 g m -2 (for treated surfaces). The Karl-Fischer titration indicated that between 90 and 1000 ppm (depending on the reagent used) of water remained in the hydrocarbon compound after filtration

  6. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  7. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    International Nuclear Information System (INIS)

    Jiang Hao; Hong Lianggou; Venkatasubramanian, N.; Grant, John T.; Eyink, Kurt; Wiacek, Kevin; Fries-Carr, Sandra; Enlow, Jesse; Bunning, Timothy J.

    2007-01-01

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant (ε r ) and dielectric loss (tan δ) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F b ) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F b of 610 V/μm, an ε r of 3.07, and a tan δ of 7.0 x 10 -3 at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss

  8. Surface and grain boundary modifications of YBa2Cu3O7-δ ceramics by plasma-enhanced fluorination

    International Nuclear Information System (INIS)

    Magro, C.; Heintz, J.M.; Etourneau, J.; Tressaud, A.; Cardinaud, C.; Turban, G.; Hudakova, N.

    1994-01-01

    The radiofrequency plasma technique involving mixtures of CF 4 + O 2 gases has been applied to the treatment of high T c superconducting oxides (YBa 2 Cu 3 O 7-δ ). The investigation of the various experimental parameters of the process has shown that the improvement of the critical current density J c mainly depends on the inlet precursor composition CF 4 + τ % O 2 , on the total pressure, and on the reaction time. The presence of fluorine in the bulk of the ceramics has been observed from electron microprobe analysis, together with an increase of the open-quotes Cu 3+ close quotes content. The plasma enhanced fluorination (PEF) treatment improves the superconducting properties of the materials: both values of the resistivity in the normal state and of the superconducting transition width are reduced and the critical transition temperature is improved of about 1 K. Mechanisms of interaction between the reactive species of the plasma and YBa 2 Cu 3 O 7-δ ceramics have been proposed through detailed angle resolved X-ray photoelectron spectroscopic analyses. At the surface of the outer grains, the plasma treatment removes (OH) - and (CO 3 ) 2- species contained in the degradation layer and gives rise to a fluoride-rich layer. In the bulk of the material the occurrence of metal-fluorine bonds in the superconducting phase has to be assumed. Moreover, interactions between atomic fluorine and grain boundaries result in an improvement of intergranular magnetic behavior, according to a.c. susceptibility measurements. An increase of the oxidation state of copper has also been detected, confirming the oxidizing effect of the plasma treatment

  9. Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian [Veeco Instruments, 1 Terminal Drive, Plainview, New York 11803 (United States)

    2013-01-15

    Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

  10. Electrochemical properties of N-doped hydrogenated amorphous carbon films fabricated by plasma-enhanced chemical vapor deposition methods

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Yoriko; Furuta, Masahiro; Kuriyama, Koichi; Kuwabara, Ryosuke; Katsuki, Yukiko [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan); Kondo, Takeshi [Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Fujishima, Akira [Kanagawa Advanced Science and Technology (KAST), 3-2-1, Sakato, Takatsu-ku, Kawasaki-shi, Kanagawa 213-0012 (Japan); Honda, Kensuke, E-mail: khonda@yamaguchi-u.ac.j [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan)

    2011-01-01

    Nitrogen-doped hydrogenated amorphous carbon thin films (a-C:N:H, N-doped DLC) were synthesized with microwave-assisted plasma-enhanced chemical vapor deposition widely used for DLC coating such as the inner surface of PET bottles. The electrochemical properties of N-doped DLC surfaces that can be useful in the application as an electrochemical sensor were investigated. N-doped DLC was easily fabricated using the vapor of nitrogen contained hydrocarbon as carbon and nitrogen source. A N/C ratio of resulting N-doped DLC films was 0.08 and atomic ratio of sp{sup 3}/sp{sup 2}-bonded carbons was 25/75. The electrical resistivity and optical gap were 0.695 {Omega} cm and 0.38 eV, respectively. N-doped DLC thin film was found to be an ideal polarizable electrode material with physical stability and chemical inertness. The film has a wide working potential range over 3 V, low double-layer capacitance, and high resistance to electrochemically induced corrosion in strong acid media, which were the same level as those for boron-doped diamond (BDD). The charge transfer rates for the inorganic redox species, Fe{sup 2+/3+} and Fe(CN){sub 6}{sup 4-/3-} at N-doped DLC were sufficiently high. The redox reaction of Ce{sup 2+/3+} with standard potential higher than H{sub 2}O/O{sub 2} were observed due to the wider potential window. At N-doped DLC, the change of the kinetics of Fe(CN){sub 6}{sup 3-/4-} by surface oxidation is different from that at BDD. The rate of Fe(CN){sub 6}{sup 3-/4-} was not varied before and after oxidative treatment on N-doped DLC includes sp{sup 2} carbons, which indicates high durability of the electrochemical activity against surface oxidation.

  11. Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Hayashi, Y.; Yu, G.; Rahman, M. M.; Krishna, K. M.; Soga, T.; Jimbo, T.; Umeno, M.

    2001-01-01

    Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH 4 as the source of carbon and with different nitrogen flow rates (N 2 /CH 4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp 2 -bonded carbon or a change in sp 2 domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three (σ bonded) to two (π bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band. [copyright] 2001 American Institute of Physics

  12. Fabrication of TiO{sub 2}-modified polytetrafluoroethylene ultrafiltration membranes via plasma-enhanced surface graft pretreatment

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Yingjia [School of Environmental Science and Engineering, Shanghai Jiaotong University, Shanghai 200240 (China); Chi, Lina, E-mail: lnchi@sjtu.edu.cn [School of Environmental Science and Engineering, Shanghai Jiaotong University, Shanghai 200240 (China); Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Zhou, Weili; Yu, Zhenjiang [School of Environmental Science and Engineering, Shanghai Jiaotong University, Shanghai 200240 (China); Zhang, Zhongzhi [College of Chemical Engineering, China University of Petroleum, Beijing 102249 (China); Zhang, Zhenjia [School of Environmental Science and Engineering, Shanghai Jiaotong University, Shanghai 200240 (China); Jiang, Zheng, E-mail: z.jiang@soton.ac.uk [Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom)

    2016-01-01

    Graphical abstract: - Highlights: • Multifunctional TiO{sub 2}/PAA/PTFE ultrafiltration membrane was fabricated via tight coating of TiO{sub 2} functional layer onto the plasma-assisted graft of PAA on PTFE. • The high water flux rate, remarkable enhanced ultrafiltration performance and excellent self-cleaning ability were demonstrated. • The formation of COO−Ti bidentate coordination between TiO{sub 2} and PAA was responsible for the successful coating. - Abstract: Surface hydrophilic modification of polymer ultrafiltration membrane using metal oxide represents an effective yet highly challenging solution to improve water flux and antifouling performance. Via plasma-enhanced graft of poly acryl acid (PAA) prior to coating TiO{sub 2}, we successfully fixed TiO{sub 2} functional thin layer on super hydrophobic polytetrafluoroethylene (PTFE) ultrafiltration (UF) membranes. The characterization results evidenced TiO{sub 2} attached on the PTFE-based UF membranes through the chelating bidentate coordination between surface-grafted carboxyl group and Ti{sup 4+}. The TiO{sub 2} surface modification may greatly reduce the water contact angle from 115.8° of the PTFE membrane to 35.0° without degradation in 30-day continuous filtration operations. The novel TiO{sub 2}/PAA/PTFE membranes also exhibited excellent antifouling and self-cleaning performance due to the intrinsic hydrophilicity and photocatalysis properties of TiO{sub 2}, which was further confirmed by the photo-degradation of MB under Xe lamp irradiation.

  13. Origin, state of the art and some prospects of the diamond CVD

    CERN Document Server

    Spitsyn, B V; Alexenko, A E

    2000-01-01

    A short review on the diamond CVD origin, together with its state of the art and some prospects was given. New hybrid methods of the diamond CVD permit to gain 1.2 to 6 times of growth rate in comparison with ordinary diamond CVD's. Recent results on n-type diamond film synthesis through phosphorus doping in the course of the CVD process are briefly discussed. In comparison with high-pressure diamond synthesis, the CVD processes open new facets of the diamond as ultimate crystal for science and technology evolution. It was stressed that, mainly on the basis of new CVDs of diamond, the properties of natural diamond are not only reproduced, but can be surpassed. As examples, mechanical (fracture resistance), physical (thermal conductivity), and chemical (oxidation stability) properties are mentioned. Some present issues in the field are considered.

  14. 25th anniversary article: CVD polymers: a new paradigm for surface modification and device fabrication.

    Science.gov (United States)

    Coclite, Anna Maria; Howden, Rachel M; Borrelli, David C; Petruczok, Christy D; Yang, Rong; Yagüe, Jose Luis; Ugur, Asli; Chen, Nan; Lee, Sunghwan; Jo, Won Jun; Liu, Andong; Wang, Xiaoxue; Gleason, Karen K

    2013-10-11

    Well-adhered, conformal, thin (polymers can be achieved on virtually any substrate: organic, inorganic, rigid, flexible, planar, three-dimensional, dense, or porous. In CVD polymerization, the monomer(s) are delivered to the surface through the vapor phase and then undergo simultaneous polymerization and thin film formation. By eliminating the need to dissolve macromolecules, CVD enables insoluble polymers to be coated and prevents solvent damage to the substrate. CVD film growth proceeds from the substrate up, allowing for interfacial engineering, real-time monitoring, and thickness control. Initiated-CVD shows successful results in terms of rationally designed micro- and nanoengineered materials to control molecular interactions at material surfaces. The success of oxidative-CVD is mainly demonstrated for the deposition of organic conducting and semiconducting polymers. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Vascularização arterial e venosa do linfonodo poplíteo em cães

    Directory of Open Access Journals (Sweden)

    Karina de Senna Villar

    2009-08-01

    Full Text Available O linfonodo poplíteo nos cães situa-se, à direita e à esquerda em um espaço designado fossa poplítea, no terço distal dos músculos bíceps femoral, lateralmente e semitendinoso, medialmente, projetando-se na altura da face caudal das articulações femoro tibial e femoro patelar (articulação do joelho. Neste estudo foram utilizados vinte e cinco cães, machos e fêmeas adultos, procedentes do canil municipal de Araçatuba, São Paulo, cujas capturas foram efetuadas pela defesa sanitária animal desta cidade. Os vasos arteriais destinados a esta estrutura derivam sempre, de ambos os lados, da artéria femoral caudal distal e variam de 10 a 1, com maior freqüência de 2 (7 vezes, 28% à direita e de 6 a 2 igualmente com maior freqüência de 2 (8 vezes, 32%. Tão logo tem-se ainda à direita 5 e 6 ramos (3 vezes, 12%, 1, 7 e 10 (1 vez, 4%. Relativamente às veias derivadas deste linfonodo, convergem sempre para a veia safena lateral, estes vasos oscilam entre 9 e 2, com maior freqüência de 3 (9 vezes, 3,6%, à direita e de 12 a 2, com maior freqüência de 3 (10 vezes, 40% à esquerda. Assim, os demais ramos oriundos da linfonodo poplíteo direito e que se inserem na veia supracitada são em número de 2 e 5 (5 vezes, 20%, 4 e 6 (2 vezes, 8% e 8 e 9 (1 vez, 4%. Não obstante, ao lado esquerdo verifica-se em número de 2 ramos (6 vezes, 24%, 4 (4 vezes, 16%, 6 (3 vezes, 12% e finalizando 9 e 12 ramos (1 vez, 4%. O tamanho do linfonodo poplíteo em cães soropositivos para Leishmaniose Visceral pode encontrar-se entre 7,8 x 3,8 x 6,1 a 50,0 x 20,7 x 28,5 , em mm, sendo a média 26,18 x 10,5 x 15,97 mm para o direito e 26,98 x 11,14 x 15,25 mm para o esquerdo (referente as medidas dorso-ventral, latero-lateral e crânio-caudal, respectivamente.

  16. Muusikamaailm : Arvo Pärdi uus teos. Telemanni päevad Magdeburgis. Uus orkester Soomes. Ingvar Lidholm 80. Auhindu ja preemiaid / Priit Kuusk

    Index Scriptorium Estoniae

    Kuusk, Priit, 1938-

    2001-01-01

    21. veebr. tuli Oxfordis maailmaesiettekandele A. Pärdi teos "Littlemore Tractus". Telemanni päevade raames toimuvast rahvusvahelisest kammeransamblite konkursist Magdeburgis. O. Mustonen asutas Helsingis uue orkestri. Lühidalt I.Lidholmi tegevusest ja loomingust. P. Norgaardile ja H. von Manen'ile antud autasust ja preemiast

  17. Muusika : Chopiniئvirtuoos ERSO ees. Teo Maiste 70. Virumaa noorteorkestri sünnipäev. "Jazzkaare" festivali peaesinejad. Kuningas Arthuri Gala 2002

    Index Scriptorium Estoniae

    2002-01-01

    Koos ERSOga astub üles poola tipp-pianist. Teo Maiste tähistab 70ndat juubelit laval. Virumaa noorteorkestr sai viie aastaseks. "Jazzkaare" festivali peaesinejateks on USA lauljatar-pianist Diane Schuur ja norra klahvpillimängija Bugge Wessetoft. Seekordne Kuningas Arthuri Gala 2002 toimub Narva Aleksandri kirikus

  18. Conservation of Monuments by a Three-Layered Compatible Treatment of TEOS-Nano-Calcium Oxalate Consolidant and TEOS-PDMS-TiO2 Hydrophobic/Photoactive Hybrid Nanomaterials

    Directory of Open Access Journals (Sweden)

    Chrysi Kapridaki

    2018-04-01

    Full Text Available In the conservation of monuments, research on innovative nanocomposites with strengthening, hydrophobic and self-cleaning properties have attracted the interest of the scientific community and promising results have been obtained as a result. In this study, stemming from the need for the compatibility of treatments in terms of nanocomposite/substrate, a three-layered compatible treatment providing strengthening, hydrophobic, and self-cleaning properties is proposed. This conservation approach was implemented treating lithotypes and mortars of different porosity and petrographic characteristics with a three-layered treatment comprising: (a a consolidant, tetraethoxysilane (TEOS-nano-Calcium Oxalate; (b a hydrophobic layer of TEOS-polydimethylsiloxane (PDMS; and (c a self-cleaning layer of TiO2 nanoparticles from titanium tetra-isopropoxide with oxalic acid as hole-scavenger. After the three-layered treatment, the surface hydrophobicity was improved due to PDMS and nano-TiO2 in the interface substrate/atmosphere, as proven by the homogeneity and the Si–O–Ti hetero-linkages of the blend protective/self-cleaning layers observed by Scanning Electron Microscope (SEM, Transmission Electron Microscope (TEM and Fourier-Transform Infrared Spectroscopy (FTIR. The aesthetic, microstructural, mechanical and permeabile compatibility of the majority of treated substrates ranged within acceptability limits. The improved photocatalytic activity, as proven by the total discoloration of methylene blue in the majority of cases, was attributed to the anchorage of TiO2, through the Si–O–Ti bonds to SiO2, in the interface with the atmosphere, thus enhancing photoactivation.

  19. NEXAFS Study of the Annealing Effect on the Local Structure of FIB-CVD DLC

    International Nuclear Information System (INIS)

    Saikubo, Akihiko; Kato, Yuri; Igaki, Jun-ya; Kanda, Kazuhiro; Matsui, Shinji; Kometani, Reo

    2007-01-01

    Annealing effect on the local structure of diamond like carbon (DLC) formed by focused ion beam-chemical vapor deposition (FIB-CVD) was investigated by the measurement of near edge x-ray absorption fine structure (NEXAFS) and energy dispersive x-ray (EDX) spectra. Carbon K edge absorption NEXAFS spectrum of FIB-CVD DLC was measured in the energy range of 275-320 eV. In order to obtain the information on the location of the gallium in the depth direction, incidence angle dependence of NEXAFS spectrum was measured in the incident angle range from 0 deg. to 60 deg. . The peak intensity corresponding to the resonance transition of 1s→σ* originating from carbon-gallium increased from the FIB-CVD DLC annealed at 200 deg. C to the FIB-CVD DLC annealed at 400 deg. C and decreased from that at 400 deg. C to that at 600 deg. C. Especially, the intensity of this peak remarkably enhanced in the NEXAFS spectrum of the FIB-CVD DLC annealed at 400 deg. C at the incident angle of 60 deg. . On the contrary, the peak intensity corresponding to the resonance transition of 1s→π* originating from carbon double bonding of emission spectrum decreased from the FIB-CVD DLC annealed at 200 deg. C to that at 400 deg. C and increased from that at 400 deg. C to that at 600 deg. C. Gallium concentration in the FIB-CVD DLC decreased from ≅2.2% of the as-deposited FIB-CVD DLC to ≅1.5% of the FIB-CVD DLC annealed at 600 deg. C from the elementary analysis using EDX. Both experimental results indicated that gallium atom departed from FIB-CVD DLC by annealing at the temperature of 600 deg. C

  20. Hyper-spectral modulation fluorescent imaging using double acousto-optical tunable filter based on TeO2-crystals

    International Nuclear Information System (INIS)

    Zaytsev, Kirill I; Perchik, Alexey V; Chernomyrdin, Nikita V; Yurchenko, Stanislav O; Kudrin, Konstantin G; Reshetov, Igor V

    2015-01-01

    We have proposed a method for hyper-spectral fluorescent imaging based on acousto-optical filtering. The object of interest was pumped using ultraviolet radiation of mercury lamp equipped with monochromatic excitation filter with the window of transparency centered at 365 nm. Double TeO 2 -based acousto-optical filter, tunable in range from 430 to 780 nm and having 2 nm bandwidth of spectral transparency, was used in order to detect quasimonochromatic images of object fluorescence. Modulating of ultraviolet pump intensity was used in order to reduce an impact of non-fluorescent background on the sample fluorescent imaging. The technique for signal-to-noise ratio improvement, based on fluorescence intensity estimation via digital processing of modulated video sequence of fluorescent object, was introduced. We have implemented the proposed technique for the test sample studying and we have discussed its possible applications

  1. Random laser emission from a Rhodamine B-doped GPTS/TEOS-derived organic/silica monolithic xerogel

    Science.gov (United States)

    Abegão, Luis M. G.; Manoel, D. S.; Otuka, A. J. G.; Ferreira, P. H. D.; Vollet, D. R.; Donatti, D. A.; De Boni, L.; Mendonça, C. R.; De Vicente, F. S.; Rodrigues, J. J., Jr.; Alencar, M. A. R. C.

    2017-06-01

    A Rhodamine B-doped 3-glycidoxypropyltrimethoxysilane (GPTS)/tetraethyl orthosilicate (TEOS)-derived organic/silica monolithic xerogel with excellent optical properties was prepared and its potential as a random laser host investigated. This hybrid material has a non-porous organic/inorganic morphology with silica-rich nanoparticles of less than 10 nm in diameter homogeneously dispersed within the matrix. Random laser emission with incoherent feedback, centered at 618 nm, was observed from Rhodamine B incorporated into the monolithic xerogel when excited by a 532 nm pulsed laser. This hybrid system is shown to be very promising for the development of a new class of random laser-based integrated devices, with applications ranging from optical bio-imaging to sensing.

  2. Synthesis and Optical Characterization of Nd3+ doped TeO2-PbO-Li2O

    Directory of Open Access Journals (Sweden)

    M. Rahim Sahar

    2012-02-01

    Full Text Available Glass based on Nd3+-doped TeO2-PbO-Li2O has successfully been made by melt quenching technique and their thermal parameters have been determined using Differential Thermal Analyzer (DTA. The glass is then nucleated and/or growth by controlled heat treatment at slightly below the crystallization temperature. The X-ray diffraction (XRD technique is used to estimate the nano-crystallite size. Meanwhile, the optical characterization has been determined using the Photoluminescence Spectroscopy. It is found out that the crystallite size is about 20 nm and very much depending on the heat-treatment time. Meanwhile, the intensity of the luminescence spectra is very much depending on the concentration of the dopant.   Keyword: tellurium glasses, melt quenching technique, optical characterization

  3. Optical transitions of Er3+/Yb3+ codoped TeO2-WO3-Bi2O3 glass.

    Science.gov (United States)

    Shen, Xiang; Nie, Qiuhua; Xu, Tiefeng; Gao, Yuan

    2005-10-01

    Optical absorption and emission properties of the Er3+/Yb3+ codoped TeO2-WO3-Bi2O3 (TWB) glass has been investigated. The transition probabilities, excited state lifetimes, and the branching ratios have been predicted for Er3+ based on the Judd-Ofelt theory. The broad 1.5 microm fluorescence was observed under 970 nm excitation, and its full width at half maximum (FWHM) is 77 nm. The emission cross-section is calculated using the McCumber theory, and the peak emission cross-section is 1.03 x 10(-21) cm2 at 1.531 microm. This value is much larger than those of the silicate and phosphate glasses. Efficient green and weak red upconversion luminescence from Er3+ centers in the glass sample was observed at room temperature, and the upconversion excitation processes have been analyzed.

  4. Spectroscopy and visible frequency upconversion in Er3+-Yb3+: TeO2-ZnO glass.

    Science.gov (United States)

    Mohanty, Deepak Kumar; Rai, Vineet Kumar

    2014-01-01

    The UV-Vis-NIR absorption studies of the Er(3+)/Er(3+)-Yb(3+) doped/codoped TeO2-ZnO (TZO) glasses fabricated by the melting and quenching method has been performed. The spectroscopic radiative parameters viz. radiative transition probabilities, branching ratios and lifetimes have been determined from the absorption spectrum by using Judd-Ofelt theory. The near infrared (NIR) to visible frequency upconversion (UC) have been monitored by using an excitation of 976 nm wavelength radiation from a CW diode laser. The effect of codoping with Yb(3+) ions on the intensity of the UC emission bands from the Er(3+) ions throughout visible region has been studied. The mechanism responsible for the observed upconversion emissions in the prepared samples have been explained on the basis of excited state absorption and efficient energy transfer processes. Copyright © 2013 Elsevier B.V. All rights reserved.

  5. Characterization of emission properties of Er3+ ions in TeO2-CdF2-WO3 glasses.

    Science.gov (United States)

    Bilir, G; Mustafaoglu, N; Ozen, G; DiBartolo, B

    2011-12-01

    TeO(2)-CdF(2)-WO(3) glasses with various compositions and Er(3+) concentrations were prepared by conventional melting method. Their optical properties were studied by measuring the absorption, luminescence spectra and the decay patterns at room temperature. From the optical absorption spectra the Judd-Ofelt parameters (Ω(t)), transition probabilities, branching ratios of various transitions, and radiative lifetimes were calculated. The absorption and emission cross-section spectra of the (4)I(15/2) to (4)I(13/2) transition of erbium were determined. Emission quantum efficiencies and the average critical distance R(0) which provides a measure for the strength of cross relaxation were determined. Copyright © 2011 Elsevier B.V. All rights reserved.

  6. Transanal endoscopic microsurgery with 3-D (TEM) or high-definition 2-D transanal endoscopic operation (TEO) for rectal tumors. A prospective, randomized clinical trial.

    Science.gov (United States)

    Serra-Aracil, Xavier; Mora-Lopez, Laura; Alcantara-Moral, Manel; Caro-Tarrago, Aleidis; Navarro-Soto, Salvador

    2014-05-01

    Transanal endoscopic microsurgery (TEM) is a three-dimensional viewing endoscopic system procedure which provides access to rectal tumors through a rectoscope. Two-dimensional transanal endoscopic operation (TEO), with the introduction of high-definition vision, achieves results that are comparable to those of the classical TEM. The main aim of the study was to compare the effectiveness of TEO and TEM systems in a prospective, randomized clinical trial. patients meeting inclusion criteria for diagnosis of rectal tumors with curative intent. Sample size, 36 patients. Patients were randomized to receive one of the two procedures. Study variables recorded were the following: preoperative data (time taken to assemble equipment, surgical time, quality of pneumorectum), postoperative morbidity and mortality, pathology study of the tumors, and economic analysis. Thirty-six patients were analyzed according to intention to treat. Two patients were excluded. The final per-protocol analysis was 34 patients. There were no significant differences in the preoperative or operative variables, quality of pneumorectum, postoperative variables, or pathology results. A trend toward benefit was observed in favor of TEO in time required for assembly, surgical suture time, and total surgical time though the differences were not statistically significant. Statistically significant differences were found in terms of the total cost of the procedure, with mean costs of 2,031  ± 440 for TEO and 2,603  ± 507 for TEM (95% CI 218.15-926.486 , p = 0.003). No technical or clinical differences were observed between the results obtained with the two systems except lower cost with TEO.

  7. Facility for continuous CVD coating of ceramic fibers

    International Nuclear Information System (INIS)

    Moore, A.W.

    1992-01-01

    The development of new and improved ceramic fibers has spurred the development and application of ceramic composites with improved strength, strength/weight ratio, toughness, and durability at increasingly high temperatures. For many systems, the ceramic fibers can be used without modification because their properties are adequate for the chosen application. However, in order to take maximum advantage of the fiber properties, it is often necessary to coat the ceramic fibers with materials of different composition and properties. Examples include (1) boron nitride coatings on a ceramic fiber, such as Nicalon silicon carbide, to prevent reaction with the ceramic matrix during fabrication and to enhance fiber pullout and increase toughness when the ceramic composite is subjected to stress; (2) boron nitride coatings on ceramic yarns, such as Nicalon for use as thermal insulation panels in an aerodynamic environment, to reduce abrasion of the Nicalon and to inhibit the oxidation of free carbon contained within the Nicalon; and (3) ceramic coatings on carbon yarns and carbon-carbon composites to permit use of these high-strength, high-temperature materials in oxidizing environments at very high temperatures. This paper describes a pilot-plant-sized CVD facility for continuous coating of ceramic fibers and some of the results obtained so far with this equipment

  8. Selective tungsten deposition in a batch cold wall CVD system

    International Nuclear Information System (INIS)

    Chow, R.; Kang, S.; Harshbarger, W.R.; Susoeff, M.

    1987-01-01

    Selective deposition of tungsten offers many advantages for VLSI technology. The process can be used as a planarization technique for multilevel interconnect technology, it can be used to fill contacts and to provide a barrier layer between Al and Si materials, and the selective W process might be used as a self-aligned technology to provide low resistance layers on source/drain and gate conductors. Recent publications have indicate that cold wall CVD systems provide advantages for development of selective W process. Genus has investigated selective W deposition processing, and we have developed a selective W deposition process for the Genus 8402 multifilm deposition system. This paper describes the Genus 8402 system and the selective W process developed in this reactor. To further develop selective W technology, Genus has signed an agreement with General Electric establishing a joint development program. As a part of this program, the authors characterized the selective W process for encroachment, Si consumption and degrees of selectivity on various dielectrics. The status of this development activity and process characterization is reviewed in this paper

  9. Carbon Nanotubes Growth by CVD on Graphite Fibers

    Science.gov (United States)

    Zhu, Shen; Su, Ching-Hua; Cochrane, J. C.; Lehoczky, S. L.; Muntele, I.; Ila, D.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Due to the superior electrical and mechanical properties of carbon nanotubes (CNT), synthesizing CNT on various substances for electronics devices and reinforced composites have been engaged in many efforts for applications. This presentation will illustrate CNT synthesized on graphite fibers by thermal CVD. On the fiber surface, iron nanoparticles as catalysts for CNT growth are coated. The growth temperature ranges from 600 to 1000 C and the pressure ranges from 100 Torr to one atmosphere. Methane and hydrogen gases with methane content of 10% to 100% are used for the CNT synthesis. At high growth temperatures (greater than or equal to 900 C), the rapid inter-diffusion of the transition metal iron on the graphite surface results in the rough fiber surface without any CNT grown on it. When the growth temperature is relative low (650-800 C), CNT with catalytic particles on the nanotube top ends are fabricated on the graphite surface. (Methane and hydrogen gases with methane content of 10% to 100% are used for the CNT synthesis.) (By measuring the samples) Using micro Raman spectroscopy in the breath mode region, single-walled or multi-walled CNT (MWCNT), depending on growth concentrations, are found. Morphology, length and diameter of these MWCNT are determined by scanning electron microscopy and Raman spectroscopy. The detailed results of syntheses and characterizations will be discussed in the presentation.

  10. Cyclic voltammetry response of an undoped CVD diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Fabisiak, K., E-mail: kfab@ukw.edu.pl [Institute of Physics, Kazimierz Wielki University, Powstancow Wielkopolskich 2, 85-090 Bydgoszcz (Poland); Torz-Piotrowska, R. [Faculty of Chemical Technology and Engineering, UTLS Seminaryjna 3, 85-326 Bydgoszcz (Poland); Staryga, E. [Institute of Physics, Technical University of Lodz, Wolczanska 219, 90-924 Lodz (Poland); Szybowicz, M. [Faculty of Technical Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Paprocki, K.; Popielarski, P.; Bylicki, F. [Institute of Physics, Kazimierz Wielki University, Powstancow Wielkopolskich 2, 85-090 Bydgoszcz (Poland); Wrzyszczynski, A. [Institute of Physics, Technical University of Lodz, Wolczanska 219, 90-924 Lodz (Poland)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer Correlation was found between diamond quality and its electrochemical performance. Black-Right-Pointing-Pointer The electrode sensitivity depends on the content of sp{sup 2} carbon phase in diamond layer. Black-Right-Pointing-Pointer The sp{sup 2} carbon phase content has little influence on the CV peak separation ({Delta}E{sub p}). - Abstract: The polycrystalline undoped diamond layers were deposited on tungsten wire substrates by using hot filament chemical vapor deposition (HFCVD) technique. As a working gas the mixture of methanol in excess of hydrogen was used. The morphologies and quality of as-deposited films were monitored by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy respectively. The electrochemical activity of the obtained diamond layers was monitored by using cyclic voltammetry measurements. Analysis of the ferrocyanide-ferricyanide couple at undoped diamond electrode suggests that electrochemical reaction at diamond electrode has a quasireversibile character. The ratio of the anodic and cathodic peak currents was always close to unity. In this work we showed that the amorphous carbon admixture in the CVD diamond layer has a crucial influence on its electrochemical performance.

  11. A Fast CVD Diamond Beam Loss Monitor for LHC

    CERN Document Server

    Griesmayer, E; Dobos, D; Effinger, E; Pernegger, H

    2011-01-01

    Chemical Vapour Deposition (CVD) diamond detectors were installed in the collimation area of the CERN LHC to study their feasibility as Fast Beam Loss Monitors in a high-radiation environment. The detectors were configured with a fast, radiation-hard pre-amplifier with a bandwidth of 2 GHz. The readout was via an oscilloscope with a bandwidth of 1 GHz and a sampling rate of 5 GSPS. Despite the 250 m cable run from the detectors to the oscilloscope, single MIPs were resolved with a 2 ns rise time, a pulse width of 10 ns and a time resolution of less than 1 ns. Two modes of operation were applied. For the analysis of unexpected beam aborts, the loss profile was recorded in a 1 ms buffer and, for nominal operation, the histogram of the time structure of the losses was recorded in synchronism with the LHC period of 89.2 μs. Measurements during the LHC start-up (February to December 2010) are presented. The Diamond Monitors gave an unprecedented insight into the time structure of the beam losses resolving the 400...

  12. Investigation of laser ablation of CVD diamond film

    Science.gov (United States)

    Chao, Choung-Lii; Chou, W. C.; Ma, Kung-Jen; Chen, Ta-Tung; Liu, Y. M.; Kuo, Y. S.; Chen, Ying-Tung

    2005-04-01

    Diamond, having many advanced physical and mechanical properties, is one of the most important materials used in the mechanical, telecommunication and optoelectronic industry. However, high hardness value and extreme brittleness have made diamond extremely difficult to be machined by conventional mechanical grinding and polishing. In the present study, the microwave CVD method was employed to produce epitaxial diamond films on silicon single crystal. Laser ablation experiments were then conducted on the obtained diamond films. The underlying material removal mechanisms, microstructure of the machined surface and related machining conditions were also investigated. It was found that during the laser ablation, peaks of the diamond grains were removed mainly by the photo-thermal effects introduced by excimer laser. The diamond structures of the protruded diamond grains were transformed by the laser photonic energy into graphite, amorphous diamond and amorphous carbon which were removed by the subsequent laser shots. As the protruding peaks gradually removed from the surface the removal rate decreased. Surface roughness (Ra) was improved from above 1μm to around 0.1μm in few minutes time in this study. However, a scanning technique would be required if a large area was to be polished by laser and, as a consequence, it could be very time consuming.

  13. Experimental studies of N~+ implantation into CVD diamond thin films

    Institute of Scientific and Technical Information of China (English)

    辛火平; 林成鲁; 王建新; 邹世昌; 石晓红; 林梓鑫; 周祖尧; 刘祖刚

    1997-01-01

    The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitroge

  14. Cs7Sm11[TeO3]12Cl16 and Rb7Nd11[TeO3]12Br16, the new tellurite halides of the tetragonal Rb6LiNd11[SeO3]12Cl16 structure type

    Science.gov (United States)

    Charkin, Dmitri O.; Black, Cameron; Downie, Lewis J.; Sklovsky, Dmitry E.; Berdonosov, Peter S.; Olenev, Andrei V.; Zhou, Wuzong; Lightfoot, Philip; Dolgikh, Valery A.

    2015-12-01

    Two new rare-earth - alkali - tellurium oxide halides were synthesized by a salt flux technique and characterized by single-crystal X-ray diffraction. The structures of the new compounds Cs7Sm11[TeO3]12Cl16 (I) and Rb7Nd11[TeO3]12Br16 (II) (both tetragonal, space group I4/mcm) correspond to the sequence of [MLn11(TeO3)12] and [M6X16] layers and bear very strong similarities to those of known selenite analogs. We discuss the trends in similarities and differences in compositions and structural details between the Se and Te compounds; more members of the family are predicted.

  15. Low-temperature synthesis of diamond films by photoemission-assisted plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kawata, Mayuri, E-mail: kawata@mail.tagen.tohoku.ac.jp; Ojiro, Yoshihiro; Ogawa, Shuichi; Takakuwa, Yuji [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Masuzawa, Tomoaki; Okano, Ken [International Christian University, 3-10-2 Osawa, Mitaka 181-8585 (Japan)

    2014-03-15

    Photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD), a process in which photoelectrons emitted from a substrate irradiated with ultraviolet light are utilized as a trigger for DC discharge, was investigated in this study; specifically, the DC discharge characteristics of PA-PECVD were examined for an Si substrate deposited in advance through hot-filament chemical vapor deposition with a nitrogen-doped diamond layer of thickness ∼1 μm. Using a commercially available Xe excimer lamp (hν = 7.2 eV) to illuminate the diamond surface with and without hydrogen termination, the photocurrents were found to be 3.17 × 10{sup 12} and 2.11 × 10{sup 11} electrons/cm{sup 2}/s, respectively. The 15-fold increase in photocurrent was ascribed to negative electron affinity (NEA) caused by hydrogen termination on the diamond surfaces. The DC discharge characteristics revealed that a transition bias voltage from a Townsend-to-glow discharge was considerably decreased because of NEA (from 490 to 373 V for H{sub 2} gas and from 330 to 200 V for Ar gas), enabling a reduction in electric power consumption needed to synthesize diamond films through PA-PECVD. In fact, the authors have succeeded in growing high-quality diamond films of area 2.0 cm{sup 2} at 540 °C with a discharge power of only 1.8 W, plasma voltage of 156.4 V, and discharge current of 11.7 mA under the glow discharge of CH{sub 4}/H{sub 2}/Ar mixed gases. In addition to having only negligible amounts of graphite and amorphous carbon, the diamond films exhibit a relatively high diamond growth rate of 0.5 μm/h at temperatures as low as 540 °C, which is attributed to Ar{sup +} ions impinging on the diamond surface, and causing the removal of hydrogen atoms from the surface through sputtering. This process leads to enhanced CH{sub x} radical adsorption, because the sample was applied with a negative potential to accelerate photoelectrons in PA-PECVD.

  16. Ultralow k films by using a plasma-enhanced chemical vapor deposition porogen approach: Study of the precursor reaction mechanisms

    International Nuclear Information System (INIS)

    Castex, A.; Jousseaume, V.; Deval, J.; Bruat, J.; Favennec, L.; Passemard, G.

    2008-01-01

    As interconnects are scaled down, much effort is made to achieve ultralow k material with a dielectric constant lower than 2.5. Thus, many new precursors are investigated in plasma-enhanced chemical vapor deposition. This is particularly true with the porogen approach where two molecules are used: an organosilicon to create the silicon matrix and an organic molecule ''porogen'' that creates material porosity during a post-treatment such as annealing. In this article, the influence of the organosilicon molecular structure is investigated. Two ''matrix precursors'' with different structures are therefore compared. The first one, referred to as D5, has a ring structure (decamethyl pentacyclosiloxane); the second one, referred to as DEOMS, has a star structure (diethoxymethyl silane). The porogen organic molecule, referred to as CHO, is cyclohexen oxide. The fragmentation paths of the precursor molecules in the plasma are investigated by quadrupole mass spectroscopy and the film structure is studied by Fourier transform infrared spectroscopy. The mass spectroscopy analysis shows that the fragmentation in plasma is highest for DEOMS, intermediate for CHO, and lowest for D5 in comparable process conditions. At the maximum plasma power setting, the loss rate, which yields molecule consumption, is 43%-81% for the D5-CHO mixture, respectively, and 73%-37% for the DEOMS-CHO mixture, respectively. This is related to higher bond-dissociation energy for the siloxane (Si-O-Si) link in D5 than silane (Si-H), silylethoxyde (Si-OC 2 H 5 ) in DEOMS, or C-C and epoxy cycle in CHO. Indeed, a higher electron-energy relative threshold for dissociation under electron impact is measured for D5 (around 7 eV) than for DEOMS and CHO (around 4 eV). Moreover, the fragment structures differ from one precursor to another. Methyl groups are abstracted from D5 and a few polysiloxane chains are produced from pentacycle opening and fragmentation. In the case of DEOMS, many single silicon

  17. Effect of growth interruptions on TiO{sub 2} films deposited by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, D., E-mail: dyli@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou, 225127 (China); Goullet, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Carette, M. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré, 59652, Villeneuve d' Ascq (France); Granier, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Landesman, J.P. [Institut de Physique de Rennes, UMR CNRS 6251, 263 av. Général Leclerc, 35042, Rennes (France)

    2016-10-01

    TiO{sub 2} films of ∼300 nm were deposited at low temperature (<140 °C) and pressure (0.4 Pa) using plasma enhanced chemical vapour deposition at the floating potential (V{sub f}) or the substrate self-bias voltage (V{sub b}) of −50 V. The impact of growth interruptions on the morphology, microstructure and optical properties of the films was investigated. The interruptions were carried out by stopping the plasma generation and gas injection once the increase of the layer thickness during each deposition step was about ∼100 nm. In one case of V{sub f}, the films of ∼300 nm exhibit a columnar morphology consisting of a bottom dense layer, an intermediate gradient layer and a top roughness layer. But the growth interruptions result in an increase of the dense layer thickness and a decrease of surface roughness. The film inhomogeneity has been identified by the in-situ real-time evolution of the kinetic ellipsometry (KE) parameters and the modeling process of spectroscopic ellipsometry (SE). The discrepancy of the refractive index measured by SE between bottom and upper layers can be reduced by growth interruptions. In the other case of V{sub b} = −50 V, the films exhibit a more compact arrangement which is homogeneous along the growth direction as confirmed by KE and SE. Both of Fourier transform infrared spectra and X-ray diffraction illustrate a phase transformation from anatase to rutile with the bias of −50 V, and also evidenced on the evolution of the refractive index dispersion curves. And a greatly increase of the refractive indice in the transparent range can be identified. However, the growth interruptions seem to have no influence on the morphology and optical properties in this case. - Highlights: • TiO{sub 2} films deposited by plasma processes at low temperature and pressure. • Influence of growth interruptions on structural and optical properties. • In-situ real-time ellipsometry measurements on film properties. • Structural and

  18. CVD and obesity in transitional Syria: a perspective from the Middle East.

    Science.gov (United States)

    Barakat, Hani; Barakat, Hanniya; Baaj, Mohamad K

    2012-01-01

    Syria is caught in the middle of a disruptive nutritional transition. Its healthcare system is distracted by challenges and successes in other areas while neglecting to address the onslaught of Syria's cardiovascular disease (CVD) epidemic. Despite the official viewpoint touting improvement in health indicators, current trends jeopardize population health, and several surveys in the Syrian population signal the epidemic spreading far and wide. The goal is to counteract the indifference towards obesity as a threat to Syrian's health, as the country is slowly becoming a leader in CVD mortality globally. PubMed, World Health Organization, and official government websites were searched for primary surveys in Syria related to CVD morbidity, mortality, and risk factors. Inclusion criteria ensured that results maximized relevance while producing comparable studies. Statistical analysis was applied to detect the most common risk factor and significant differences in risk factor prevalence and CVD rates. Obesity remained the prevailing CVD risk factor except in older Syrian men, where smoking and hypertension were more common. CVD mortality was more common in males due to coronary disease, while stroke dominated female mortality. The young workforce is especially impacted, with 50% of CVD mortality occurring before age 65 years and an 81% prevalence of obesity in women over 45 years. Syria can overcome its slow response to the CVD epidemic and curb further deterioration by reducing obesity and, thus, inheritance and clustering of risk factors. This can be achieved via multilayered awareness and intensive parental and familial involvement. Extinguishing the CVD epidemic is readily achievable as demonstrated in other countries.

  19. Development of a CVD silica coating for UK advanced gas-cooled nuclear reactor fuel pins

    International Nuclear Information System (INIS)

    Bennett, M.J.; Houlton, M.R.; Moore, D.A.; Foster, A.I.; Swidzinski, M.A.M.

    1983-04-01

    Vapour deposited silica coatings could extend the life of the 20% Cr/25% Ni niobium stabilised (20/25/Nb) stainless steel fuel cladding of the UK advanced gas cooled reactors. A CVD coating process developed originally to be undertaken at atmospheric pressure has now been adapted for operation at reduced pressure. Trials on the LP CVD process have been pursued to the production scale using commercial equipment. The effectiveness of the LP CVD silica coatings in providing protection to 20/25/Nb steel surfaces against oxidation and carbonaceous deposition has been evaluated. (author)

  20. Radiation monitoring with CVD diamonds and PIN diodes at BaBar

    Energy Technology Data Exchange (ETDEWEB)

    Bruinsma, M. [University of California Irvine, Irvine, CA 92697 (United States); Burchat, P. [Stanford University, Stanford, CA 94305-4060 (United States); Curry, S. [University of California Irvine, Irvine, CA 92697 (United States)], E-mail: scurry@slac.stanford.edu; Edwards, A.J. [Stanford University, Stanford, CA 94305-4060 (United States); Kagan, H.; Kass, R. [Ohio State University, Columbus, OH 43210 (United States); Kirkby, D. [University of California Irvine, Irvine, CA 92697 (United States); Majewski, S.; Petersen, B.A. [Stanford University, Stanford, CA 94305-4060 (United States)

    2007-12-11

    The BaBar experiment at the Stanford Linear Accelerator Center has been using two polycrystalline chemical vapor deposition (pCVD) diamonds and 12 silicon PIN diodes for radiation monitoring and protection of the Silicon Vertex Tracker (SVT). We have used the pCVD diamonds for more than 3 years, and the PIN diodes for 7 years. We will describe the SVT and SVT radiation monitoring system as well as the operational difficulties and radiation damage effects on the PIN diodes and pCVD diamonds in a high-energy physics environment.

  1. Multilayered and composite PVD-CVD coatings in cemented carbides manufacture

    International Nuclear Information System (INIS)

    Glushkov, V.N.; Anikeev, A.I.; Anikin, V.N.; Vereshchaka, A.S.

    2001-01-01

    Carbide cutting tools with wear-resistant coatings deposited by CVD process are widely employed in mechanical engineering to ensure a substantially longer service life of tool systems. However, the relatively high temperature and long time of the process make the substrate decarburise and, as a result, the bend strength and performance characteristics of a tool decrease. The present study suggests the problem of deteriorated strength of CVD-coated carbide tools be solved by the development of a technology that combines arc-PVD and CVD processes to deposit multilayered coatings of titanium and aluminium compounds. (author)

  2. Treatment with liraglutide may improve markers of CVD reflected by reduced levels of apoB

    DEFF Research Database (Denmark)

    Engelbrechtsen, Line; Lundgren, J; Wewer Albrechtsen, Nicolai Jacob

    2017-01-01

    Background: Dislipidaemia and increased levels of apolipoprotein B (apoB) in individuals with obesity are risk factors for development of cardiovascular disease (CVD). The aim of this study was to investigate the effect of weight loss and weight maintenance with and without liraglutide treatment ......B, despite similar body weight maintenance. Treatment with liraglutide may therefore reduce apoB levels and thus reflect lower CVD risk. Including apoB measurements in clinical practice when monitoring patients with dislipidemia or CVD might prove to be useful....

  3. CVD transfer-free graphene for sensing applications

    Directory of Open Access Journals (Sweden)

    Chiara Schiattarella

    2017-05-01

    Full Text Available The sp2 carbon-based allotropes have been extensively exploited for the realization of gas sensors in the recent years because of their high conductivity and large specific surface area. A study on graphene that was synthetized by means of a novel transfer-free fabrication approach and is employed as sensing material is herein presented. Multilayer graphene was deposited by chemical vapour deposition (CVD mediated by CMOS-compatible Mo. The utilized technique takes advantage of the absence of damage or contamination of the synthesized graphene, because there is no need for the transfer onto a substrate. Moreover, a proper pre-patterning of the Mo catalyst allows one to obtain graphene films with different shapes and dimensions. The sensing properties of the material have been investigated by exposing the devices to NO2, NH3 and CO, which have been selected because they are well-known hazardous substances. The concentration ranges have been chosen according to the conventional monitoring of these gases. The measurements have been carried out in humid N2 environment, setting the flow rate at 500 sccm, the temperature at 25 °C and the relative humidity (RH at 50%. An increase of the conductance response has been recorded upon exposure towards NO2, whereas a decrease of the signal has been detected towards NH3. The material appears totally insensitive towards CO. Finally, the sensing selectivity has been proven by evaluating and comparing the degree of adsorption and the interaction energies for NO2 and NH3 on graphene. The direct-growth approach for the synthesis of graphene opens a promising path towards diverse applicative scenarios, including the straightforward integration in electronic devices.

  4. A study of diaschisis in CVD using MR-CT

    International Nuclear Information System (INIS)

    Okada, Akihiko; Fujimoto, Toshiro; Uetsuhara, Koichi; Asakura, Tetsuhiko; Osame, Mitsuhiro; Igata, Akihiro.

    1987-01-01

    The presence of diaschisis in the non-infarct cerebral areas in a cerebro-vascular disorder (CVD) has been reported using PET and cerebral-blood flowmetry. We are not aware, however, of any report studying this diaschisis by means of the method of magnetic resonance imaging (MRI). In this connection, we studied brain MRI in 38 patients with cerebral infarctions. The T 1 relaxation time was estimated in the white and grey matters of the frontal, temporal, and occipital lobes and the thalamus, including the cerebral white matter of both the infarct and non-infarct sides. In the major-stroke group, significant increases (all P 1 relaxation time were observed in the thalamus of the infarct side, as well as in the thalamus and the white matter of the occipital lobe on the non-infarct side. In the minor-stroke group, significant increases (all P 1 relaxation time were also observed in all areas except the frontal-lobe white matter of the infarct and non-infarct sides. We have thus proved the presence of diaschisis through the method of MRI by evaluating the T 1 relaxation time. An analysis of the time profile of the T 1 relaxation time in each area demonstrated that the T 1 relaxation time tended to show its greatest value between 2 weeks and 2 months and thereafter gradually decreased, reaching the normal range 2 months later in the white matter of both the infarct and non-infarct sides. The T 1 relaxation time in the thalamus of the infarct side, however, decreased between 2 weeks and 2 months and then increased again. Therefore, we were able to show different time profiles of the diaschisis in various areas of the brain through the analysis of the T 1 relaxation time in MRI. (author)

  5. CVD transfer-free graphene for sensing applications.

    Science.gov (United States)

    Schiattarella, Chiara; Vollebregt, Sten; Polichetti, Tiziana; Alfano, Brigida; Massera, Ettore; Miglietta, Maria Lucia; Di Francia, Girolamo; Sarro, Pasqualina Maria

    2017-01-01

    The sp 2 carbon-based allotropes have been extensively exploited for the realization of gas sensors in the recent years because of their high conductivity and large specific surface area. A study on graphene that was synthetized by means of a novel transfer-free fabrication approach and is employed as sensing material is herein presented. Multilayer graphene was deposited by chemical vapour deposition (CVD) mediated by CMOS-compatible Mo. The utilized technique takes advantage of the absence of damage or contamination of the synthesized graphene, because there is no need for the transfer onto a substrate. Moreover, a proper pre-patterning of the Mo catalyst allows one to obtain graphene films with different shapes and dimensions. The sensing properties of the material have been investigated by exposing the devices to NO 2 , NH 3 and CO, which have been selected because they are well-known hazardous substances. The concentration ranges have been chosen according to the conventional monitoring of these gases. The measurements have been carried out in humid N 2 environment, setting the flow rate at 500 sccm, the temperature at 25 °C and the relative humidity (RH) at 50%. An increase of the conductance response has been recorded upon exposure towards NO 2 , whereas a decrease of the signal has been detected towards NH 3 . The material appears totally insensitive towards CO. Finally, the sensing selectivity has been proven by evaluating and comparing the degree of adsorption and the interaction energies for NO 2 and NH 3 on graphene. The direct-growth approach for the synthesis of graphene opens a promising path towards diverse applicative scenarios, including the straightforward integration in electronic devices.

  6. Chemical vapor deposition (CVD) of uranium for alpha spectrometry

    International Nuclear Information System (INIS)

    Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F.

    2015-09-01

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  7. Lithium storage properties of multiwall carbon nanotubes prepared by CVD

    International Nuclear Information System (INIS)

    Ahn, J.-O.; Andong National University,; Wang, G.X.; Liu, H.K.; Dou, S.X.

    2003-01-01

    Full text: Multiwall carbon nanotubes (MWCNTs) were synthesised by chemical vapour deposition (CVD) method using acetylene gas. The XRD pattern of as prepared carbon nanotubes showed that the d 002 value is 3.44 Angstroms. The morphology and microstructure of carbon nanotubes were characterized by HRTEM. Most of carbon nanotubes are entangled together to form bundles or ropes. The diameter of the carbon nanotubes is in the range of 10 ∼ 20 nm. There is a small amount of amorphous carbon particles presented in the sample. However, the yield of carbon nanotubes is more than 95%. Electrochemical properties of carbon nanotubes were characterised via a variety of electrochemical testing techniques. The result of CV test showed that the Li insertion potential is quite low, which is very close to O V versus Li + /Li reference electrode, whereas the potential for Li de-intercalation is in the range of 0.2-0.4 V. There exists a slight voltage hysteresis between Li intercalation and Li de-intercalation, which is similar to the other carbonaceous materials. The intensity of redox peaks of carbon nanotubes decrease with scanning cycle, indicating that the reversible Li insertion capacity gradually decreases. The carbon nanotubes electrode demonstrated a reversible lithium storage capacity of 340 mAh/g with good cyclability at moderate current density. Further improvement of Li storage capacity is possible by opening the end of carbon nanotubes to allow lithium insertion into inner graphene sheet of carbon nanotubes. The kinetic properties of lithium insertion in carbon nanotube electrodes were characterised by a.c. impedance measurements. It was found that the lithium diffusion coefficient d Li decreases with an increase of Li ion concentration in carbon nanotube host

  8. Cutting characteristics of dental diamond burs made with CVD technology Características de corte de pontas odontológicas diamantadas obtidas pela tecnologia CVD

    Directory of Open Access Journals (Sweden)

    Luciana Monti Lima

    2006-04-01

    Full Text Available The aim of this study was to determine the cutting ability of chemical vapor deposition (CVD diamond burs coupled to an ultrasonic dental unit handpiece for minimally invasive cavity preparation. One standard cavity was prepared on the mesial and distal surfaces of 40 extracted human third molars either with cylindrical or with spherical CVD burs. The cutting ability was compared regarding type of substrate (enamel and dentin and direction of handpiece motion. The morphological characteristics, width and depth of the cavities were analyzed and measured using scanning electron micrographs. Statistical analysis using the Kruskal-Wallis test (p O objetivo deste estudo foi determinar a habilidade de corte das pontas de diamante obtidas pelo processo de deposição química a vapor (CVD associadas ao aparelho de ultra-som no preparo cavitário minimamente invasivo. Uma cavidade padronizada foi preparada nas faces mesial e distal de 40 terceiros molares, utilizando-se pontas de diamante CVD cilíndrica e esférica. A habilidade de corte foi comparada quanto ao tipo de substrato (esmalte e dentina e quanto à direção do movimento realizado com a ponta. As características morfológicas, a largura e profundidade das cavidades foram analisadas e medidas em microscopia eletrônica de varredura. A análise estatística pelo teste de Kruskal-Wallis (p < 0,05 revelou que a largura e profundidade das cavidades foram significativamente maiores em dentina. Cavidades mais largas foram obtidas quando se utilizou a ponta de diamante CVD cilíndrica, e mais profundas quando a ponta esférica foi empregada. A direção do movimento da ponta não influenciou o tamanho das cavidades, sendo os cortes produzidos pelas pontas de diamante CVD precisos e conservadores.

  9. Selective CVD tungsten on silicon implanted SiO/sub 2/

    International Nuclear Information System (INIS)

    Hennessy, W.A.; Ghezzo, M.; Wilson, R.H.; Bakhru, H.

    1988-01-01

    The application range of selective CVD tungsten is extended by its coupling to the ion implantation of insulating materials. This article documents the results of selective CVD tungsten using silicon implanted into SiO/sub 2/ to nucleate the tungsten growth. The role of implant does, energy, and surface preparation in achieving nucleation are described. SEM micrographs are presented to demonstrate the selectivity of this process. Measurements of the tungsten film thickness and sheet resistance are provided for each of the experimental variants corresponding to successful deposition. RBS and XPS analysis are discussed in terms of characterizing the tungsten/oxide interface and to evaluate the role of the silicon implant in the CVD tungsten mechanism. Utilizing this method a desired metallization pattern can be readily defined with lithography and ion implantation, and accurately replicated with a layer of CVD tungsten. This approach avoids problems usually associated with blanket deposition and pattern transfer, which are particularly troublesome for submicron VLSI technology

  10. High-efficiency supercapacitor electrodes of CVD-grown graphenes hybridized with multiwalled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Kalam, Amir Abul; Bae, Joon Ho [Dept. of Nano-physics, Gachon University, Seongnam (Korea, Republic of); Park, Soo Bin; Seo, Yong Ho [Nanotechnology and Advanced Material Engineering, HMC, and GRI, Sejong University, Seoul (Korea, Republic of)

    2015-08-15

    We demonstrate, for the first time, high-efficiency supercapacitors by utilizing chemical vapor deposition (CVD)-grown graphenes hybridized with multiwalled carbon nanotubes (CNTs). A single-layer graphene was grown by simple CVD growth method, and transferred to polyethylene terephthalate substrates. The bare graphenes were further hybridized with multiwalled CNTs by drop-coating CNTs on graphenes. The supercapacitors using bare graphenes and graphenes with CNTs revealed that graphenes with CNTs resulted in enhanced supercapacitor performances of 2.2- (the mass-specific capacitance) and 4.4-fold (the area-specific capacitance) of those of bare graphenes. Our strategy to improve electrochemical performance of CVD-grown graphenes is advantageous for large-scale graphene electrodes due to high electrical conductivity of CVD-grown graphenes and cost-effectiveness of using multiwalled CNTs as compared to conventional employment of single-walled CNTs.

  11. High-efficiency supercapacitor electrodes of CVD-grown graphenes hybridized with multiwalled carbon nanotubes

    International Nuclear Information System (INIS)

    Kalam, Amir Abul; Bae, Joon Ho; Park, Soo Bin; Seo, Yong Ho

    2015-01-01

    We demonstrate, for the first time, high-efficiency supercapacitors by utilizing chemical vapor deposition (CVD)-grown graphenes hybridized with multiwalled carbon nanotubes (CNTs). A single-layer graphene was grown by simple CVD growth method, and transferred to polyethylene terephthalate substrates. The bare graphenes were further hybridized with multiwalled CNTs by drop-coating CNTs on graphenes. The supercapacitors using bare graphenes and graphenes with CNTs revealed that graphenes with CNTs resulted in enhanced supercapacitor performances of 2.2- (the mass-specific capacitance) and 4.4-fold (the area-specific capacitance) of those of bare graphenes. Our strategy to improve electrochemical performance of CVD-grown graphenes is advantageous for large-scale graphene electrodes due to high electrical conductivity of CVD-grown graphenes and cost-effectiveness of using multiwalled CNTs as compared to conventional employment of single-walled CNTs

  12. Deposition and micro electrical discharge machining of CVD-diamond layers incorporated with silicon

    Science.gov (United States)

    Kühn, R.; Berger, T.; Prieske, M.; Börner, R.; Hackert-Oschätzchen, M.; Zeidler, H.; Schubert, A.

    2017-10-01

    In metal forming, lubricants have to be used to prevent corrosion or to reduce friction and tool wear. From an economical and ecological point of view, the aim is to avoid the usage of lubricants. For dry deep drawing of aluminum sheets it is intended to apply locally micro-structured wear-resistant carbon based coatings onto steel tools. One type of these coatings are diamond layers prepared by chemical vapor deposition (CVD). Due to the high strength of diamond, milling processes are unsuitable for micro-structuring of these layers. In contrast to this, micro electrical discharge machining (micro EDM) is a suitable process for micro-structuring CVD-diamond layers. Due to its non-contact nature and its process principle of ablating material by melting and evaporating, it is independent of the hardness, brittleness or toughness of the workpiece material. In this study the deposition and micro electrical discharge machining of silicon incorporated CVD-diamond (Si-CVD-diamond) layers were presented. For this, 10 µm thick layers were deposited on molybdenum plates by a laser-induced plasma CVD process (LaPlas-CVD). For the characterization of the coatings RAMAN- and EDX-analyses were conducted. Experiments in EDM were carried out with a tungsten carbide tool electrode with a diameter of 90 µm to investigate the micro-structuring of Si-CVD-diamond. The impact of voltage, discharge energy and tool polarity on process speed and resulting erosion geometry were analyzed. The results show that micro EDM is a suitable technology for micro-structuring of silicon incorporated CVD-diamond layers.

  13. Bone repair after osteotomy with diamond burs and CVD ultrasonic tips – histological study in rats

    OpenAIRE

    Matuda, Fábio S.; Pagani, Clovis; Miranda, Carolina B.; Crema, Aline A. S.; Brentel, Aline S.; Carvalho, Yasmin R.

    2010-01-01

    This study histologically evaluated the behavior of bone tissue of rats submitted to osteotomy with conventional diamond burs in high speed and a new ultrasonic diamond tips system (CVD – Chemical Vapor Deposition), at different study periods. The study was conducted on 24 Wistar rats. Osteotomy was performed on the posterior paws of each rat, with utilization of diamond burs in high speed under thorough water cooling at the right paw, and CVD tips at the left paw. Animals were killed a...

  14. Simulation of a perfect CVD diamond Schottky diode steep forward current–voltage characteristic

    Energy Technology Data Exchange (ETDEWEB)

    Kukushkin, V.A., E-mail: vakuk@appl.sci-nnov.ru [Institute of Applied Physics of the Russian Academy of Science, 46 Ulyanov St., 603950 Nizhny Novgorod (Russian Federation); Nizhny Novgorod State University named after N.I. Lobachevsky, 23 Gagarin pr., 603950 Nizhny Novgorod (Russian Federation)

    2016-10-01

    The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current–voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

  15. Tribological Characteristics and Applications of Superhard Coatings: CVD Diamond, DLC, and c-BN

    Science.gov (United States)

    Miyoshi, Kazuhisa; Murakawa, Masao; Watanabe, Shuichi; Takeuchi, Sadao; Wu, Richard L. C.

    1999-01-01

    Results of fundamental research on the tribological properties of chemical-vapor-deposited (CVD) diamond, diamondlike carbon, and cubic boron nitride films in sliding contact with CVD diamond in ultrahigh vacuum, dry nitrogen, humid air, and water are discussed. Furthermore, the actual and potential applications of the three different superhard coatings in the field of tribology technology, particularly for wear parts and tools, are reviewed.

  16. CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

    Science.gov (United States)

    Miyoshi, Kazuhisa

    1998-01-01

    When the main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) mm(exp 3)/N-m, respectively, carbon- and nitrogen-ion-implanted, fine-grain CVD diamond and DLC ion beam deposited on fine-grain CVD diamond met the requirements regardless of environment (vacuum, nitrogen, and air).

  17. Defining the relationship between COPD and CVD: what are the implications for clinical practice?

    Science.gov (United States)

    Morgan, Ann D; Zakeri, Rosita; Quint, Jennifer K

    2018-01-01

    Cardiovascular diseases (CVDs) are arguably the most important comorbidities in chronic obstructive pulmonary disease (COPD). CVDs are common in people with COPD, and their presence is associated with increased risk for hospitalization, longer length of stay and all-cause and CVD-related mortality. The economic burden associated with CVD in this population is considerable and the cumulative cost of treating comorbidities may even exceed that of treating COPD itself. Our understanding of the biological mechanisms that link COPD and various forms of CVD has improved significantly over the past decade. But despite broad acceptance of the prognostic significance of CVDs in COPD, there remains widespread under-recognition and undertreatment of comorbid CVD in this population. The reasons for this are unclear; however institutional barriers and a lack of evidence-based guidelines for the management of CVD in people with COPD may be contributory factors. In this review, we summarize current knowledge relating to the prevalence and incidence of CVD in people with COPD and the mechanisms that underlie their coexistence. We discuss the implications for clinical practice and highlight opportunities for improved prevention and treatment of CVD in people with COPD. While we advocate more active assessment for signs of cardiovascular conditions across all age groups and all stages of COPD severity, we suggest targeting those aged under 65 years. Evidence indicates that the increased risks for CVD are particularly pronounced in COPD patients in mid-to-late-middle-age and thus it is in this age group that the benefits of early intervention may prove to be the most effective. PMID:29355081

  18. Chemical vapor deposition (CVD) of uranium for alpha spectrometry; Deposicion quimica de vapor (CVD) de uranio para espectrometria alfa

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F., E-mail: luisalawliet@gmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2015-09-15

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  19. Surface structuring of boron doped CVD diamond by micro electrical discharge machining

    Science.gov (United States)

    Schubert, A.; Berger, T.; Martin, A.; Hackert-Oschätzchen, M.; Treffkorn, N.; Kühn, R.

    2018-05-01

    Boron doped diamond materials, which are generated by Chemical Vapor Deposition (CVD), offer a great potential for the application on highly stressed tools, e. g. in cutting or forming processes. As a result of the CVD process rough surfaces arise, which require a finishing treatment in particular for the application in forming tools. Cutting techniques such as milling and grinding are hardly applicable for the finish machining because of the high strength of diamond. Due to its process principle of ablating material by melting and evaporating, Electrical Discharge Machining (EDM) is independent of hardness, brittleness or toughness of the workpiece material. EDM is a suitable technology for machining and structuring CVD diamond, since boron doped CVD diamond is electrically conductive. In this study the ablation characteristics of boron doped CVD diamond by micro electrical discharge machining are investigated. Experiments were carried out to investigate the influence of different process parameters on the machining result. The impact of tool-polarity, voltage and discharge energy on the resulting erosion geometry and the tool wear was analyzed. A variation in path overlapping during the erosion of planar areas leads to different microstructures. The results show that micro EDM is a suitable technology for finishing of boron doped CVD diamond.

  20. A Hybrid Information Mining Approach for Knowledge Discovery in Cardiovascular Disease (CVD

    Directory of Open Access Journals (Sweden)

    Stefania Pasanisi

    2018-04-01

    Full Text Available The healthcare ambit is usually perceived as “information rich” yet “knowledge poor”. Nowadays, an unprecedented effort is underway to increase the use of business intelligence techniques to solve this problem. Heart disease (HD is a major cause of mortality in modern society. This paper analyzes the risk factors that have been identified in cardiovascular disease (CVD surveillance systems. The Heart Care study identifies attributes related to CVD risk (gender, age, smoking habit, etc. and other dependent variables that include a specific form of CVD (diabetes, hypertension, cardiac disease, etc.. In this paper, we combine Clustering, Association Rules, and Neural Networks for the assessment of heart-event-related risk factors, targeting the reduction of CVD risk. With the use of the K-means algorithm, significant groups of patients are found. Then, the Apriori algorithm is applied in order to understand the kinds of relations between the attributes within the dataset, first looking within the whole dataset and then refining the results through the subsets defined by the clusters. Finally, both results allow us to better define patients’ characteristics in order to make predictions about CVD risk with a Multilayer Perceptron Neural Network. The results obtained with the hybrid information mining approach indicate that it is an effective strategy for knowledge discovery concerning chronic diseases, particularly for CVD risk.

  1. Recent Results from Beam Tests of 3D and Pad pCVD Diamond Detectors

    CERN Document Server

    Wallny, Rainer

    2017-01-01

    Results from prototypes of a detector using chemical vapor deposited (CVD) diamond with embedded resistive electrodes in the bulk forming a 3D diamond device are presented. A detector system consisting of 3D devices based on poly-crystalline CVD (pCVD) diamond was connected to a multi-channel readout and successfully tested in a 120 GeV/c proton beam at CERN proving for the first time the feasibility of the 3D detector concept in pCVD for particle tracking applications. We also present beam test results on the dependence of signal size on incident particle rate in charged particle detectors based on poly-crystalline CVD diamond. The detectors were tested in a 260 MeV/c pion beam over a range of particle fluxes from 2 kHz/cm2 to 10 MHz/cm2 . The pulse height of the sensors was measured with pad readout electronics at a peaking time of 7 ns. Our data from the 2015 beam tests at PSI indicate that the pulse height of poly-crystalline CVD diamond sensor irradiated to 5×1014 neq/cm2 is independent of particle flux...

  2. Ion beam induced surface graphitization of CVD diamond for x-ray beam position monitor applications

    International Nuclear Information System (INIS)

    Liu, Chian; Shu, D.; Kuzay, T.M.; Wen, L.; Melendres, C.A.; Argonne National Lab., IL

    1996-01-01

    The Advanced Photon Source at ANL is a third-generation synchrotron facility that generates powerful x-ray beams on its undulator beamlines. It is important to know the position and angle of the x- ray beam during experiments. Due to very high heat flux levels, several patented x-ray beam position monitors (XBPM) exploiting chemical vapor deposition (CVD) diamond have been developed. These XBPMs have a thin layer of low-atomic-mass metallic coating so that photoemission from the x rays generate a minute but measurable current for position determination. Graphitization of the CVD diamond surface creates a very thin, intrinsic and conducting layer that can stand much higher temperatures and minimal x-ray transmission losses compared to the coated metallic layers. In this paper, a laboratory sputter ion source was used to transform selected surfaces of a CVD diamond substrate into graphite. The effect of 1-5 keV argon ion bombardment on CVD diamond surfaces at various target temperatures from 200 to 500 C was studied using Auger electron spectroscopy and in-situ electrical resistivity measurements. Graphitization after the ion bombardment has been confirmed and optimum conditions for graphitization studied. Raman spectroscopy was used to identify the overall diamond structure in the bulk of CVD diamond substrate after the ion bombardments. It was found that target temperature plays an important role in stability and electrical conductivity of the irradiated CVD diamonds

  3. Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Koo, Jae Bon; Lim, Jung Wook; Kim, Seong Hyun; Yun, Sun Jin; Ku, Chan Hoe; Lim, Sang Chul; Lee, Jung Hun

    2007-01-01

    The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al 2 O 3 dielectric are reported. Saturation mobility of 0.38 cm 2 /V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 10 8 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al 2 O 3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to - 5 V at supply voltage of - 5 V

  4. Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma-enhanced chemical vapour deposition system

    Czech Academy of Sciences Publication Activity Database

    Taylor, Andrew; Ashcheulov, Petr; Čada, Martin; Fekete, Ladislav; Hubík, Pavel; Klimša, Ladislav; Olejníček, Jiří; Remeš, Zdeněk; Jirka, Ivan; Janíček, P.; Bedel-Pereira, E.; Kopeček, Jaromír; Mistrík, J.; Mortet, Vincent

    2015-01-01

    Roč. 212, č. 11 (2015), s. 2418-2423 ISSN 1862-6300 R&D Projects: GA ČR GA13-31783S; GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * electrical conductivity * nanocrystalline materials * optical emission spectroscopy * plasma enhanced chemical vapour deposition * SiC Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.648, year: 2015

  5. The comparison of the optical spectra of carbon coatings prepared by magnetron sputtering and microwave plasma enhanced chemical vapor deposition measured by the photothermal deflection spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Pham, T.T.; Varga, Marián; Kromka, Alexander; Mao, H.B.

    2015-01-01

    Roč. 7, č. 4 (2015), s. 321-324 ISSN 2164-6627 R&D Projects: GA MŠk LH12186 Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * amorphous carbon * magnetron sputtering * CVD * optical spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  6. Töölepingu lõpetamine töötaja süüteo tõttu : [bakalaureusetöö] / Marili Lämmergas ; Tartu Ülikooli Õigusinstituut ; juhendaja: Heino Siigur

    Index Scriptorium Estoniae

    Lämmergas, Marili

    2005-01-01

    Töötaja töökohustused, töölepingu lõpetamine töötajapoolsel töökohustuste rikkumisel, töötaja suhtes usalduse kaotamisel, töötaja vääritu teo tõttu, vorminõuete rikkumine ja asjaolude tõendamine töölepingu lõpetamisel töötaja süüteo tõttu

  7. Cardiovascular disease (CVD) and chronic kidney disease (CKD) event rates in HIV-positive persons at high predicted CVD and CKD risk

    DEFF Research Database (Denmark)

    Boyd, Mark A; Mocroft, Amanda; Ryom, Lene

    2017-01-01

    BACKGROUND: The Data Collection on Adverse Events of Anti-HIV Drugs (D:A:D) study has developed predictive risk scores for cardiovascular disease (CVD) and chronic kidney disease (CKD, defined as confirmed estimated glomerular filtration rate [eGFR] ≤ 60 ml/min/1.73 m2) events in HIV...

  8. How dietary evidence for the prevention and treatment of CVD is translated into practice in those with or at high risk of CVD: a systematic review.

    Science.gov (United States)

    Schumacher, Tracy L; Burrows, Tracy L; Neubeck, Lis; Redfern, Julie; Callister, Robin; Collins, Clare E

    2017-01-01

    CVD is a leading cause of mortality and morbidity, and nutrition is an important lifestyle factor. The aim of the present systematic review was to synthesise the literature relating to knowledge translation (KT) of dietary evidence for the prevention and treatment of CVD into practice in populations with or at high risk of CVD. A systematic search of six electronic databases (CINAHL, Cochrane, EMBASE, MEDLINE, PsycINFO and Scopus) was performed. Studies were included if a nutrition or dietary KT was demonstrated to occur with a relevant separate measureable outcome. Quality was assessed using a tool adapted from two quality checklists. Population with or at high risk of CVD or clinicians likely to treat this population. A total of 4420 titles and abstracts were screened for inclusion, with 354 full texts retrieved to assess inclusion. Forty-three articles were included in the review, relating to thirty-five separate studies. No studies specifically stated their aim to be KT. Thirty-one studies were in patient or high-risk populations and four targeted health professionals. Few studies stated a theory on which the intervention was based (n 10) and provision of instruction was the most common behaviour change strategy used (n 26). KT in nutrition and dietary studies has been inferred, not stated, with few details provided regarding how dietary knowledge is translated to the end user. This presents challenges for implementation by clinicians and policy and decision makers. Consequently a need exists to improve the quality of publications in this area.

  9. Structural, thermal and optical properties of TeO2-ZnO-CdO-BaO glasses doped with VO(2+).

    Science.gov (United States)

    Sreenivasulu, V; Upender, G; Chandra Mouli, V; Prasad, M

    2015-09-05

    The glasses with composition 64TeO2-15ZnO-(20-x)CdO-xBaO-1V2O5 (0⩽x⩽20 mol%) were prepared by conventional melt quenching technique. X-ray diffraction analysis was used to confirm the amorphous nature of the glasses. The optical absorption studies revealed that the cut-off wavelength (λα) decreases while optical band gap energy (Eopt) and Urbach energy (ΔE) values increase with an increase of BaO content. Refractive index (n) evaluated from Eopt was found to decrease with an increase of BaO content. The physical parameters such as density (ρ), molar volume (Vm), oxygen packing density (OPD), optical basicity (Λ), molar refraction (Rm), and metallization criterion (M) evaluated and discussed. FTIR and Raman spectroscopic studies showed that the glass network consists of TeO4, TeO3+1/TeO3 and ZnO4 units as basic structural units. The glass transition temperature (Tg) of glass sample, onset crystallization temperature (To) and thermal stability ΔT were determined from Differential Scanning Calorimetry (DSC). Using electron paramagnetic resonance (EPR) spectra of vanadium glasses the spin Hamiltonian parameters and dipolar hyperfine coupling parameters of VO(2+) ions were calculated. It was found that V(4+) ions in these glasses exist as VO(2+) in octahedral coordination with a tetragonal distortion and have C4V symmetry with ground state dxy. Tetragonality (Δg∥/Δg⊥) of vanadium ion sites exhibited non-linear variation with BaO content. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Thermal, structural and optical properties of new TeO2sbnd Sb2O3sbnd GeO2 ternary glasses

    Science.gov (United States)

    Pereira, C.; Barbosa, J.; Cassanjes, F. C.; Gonçalves, R. R.; Ribeiro, S. J. L.; Poirier, G.

    2016-12-01

    In this work the novel glass system TeO2sbnd Sb2O3sbnd GeO2 was investigated and promising glass compositions were selected for further specific studies. Glass samples in the (80-0.8x)TeO2-(20-0.2x)Sb2O3-xGeO2 molar composition were prepared by the melt-quenching method with a glass-forming domain from x = 10 to x = 90. Samples were investigated by XRD, DSC, FTIR, Raman spectroscopy and UV-visible absorption. The XRD and DSC results bring informations about the non-crystalline state and thermal properties of these materials. It has been observed that higher GeO2 contents lead to higher glass transition temperatures and thermal stabilities against crystallization. FTIR and Raman spectroscopies suggest a progressive incorporation of GeO2 in the covalent network of TeO2 with conversion of structural units TeO4 to TeO3. Absorption spectra revealed the high visible transparency of these samples and an increase of the optical band gap with GeO2 addition, in agreement with a decreasing polarizability of the glass network. Er3+ doped and Er3+/Yb3+ codoped samples were also studied with respect to their infrared emission properties and higher GeO2 contents lead to an increase in IR emission intensity at 1,5 μm as well as longer radiative lifetimes. Finally, upconversion emission in the visible were also recorded and were shown to be strongly dependent of the composition.

  11. Raman spectroscopy, thermal and optical properties of TeO2-ZnO-Nb2O5-Nd2O3 glasses.

    Science.gov (United States)

    Kamalaker, V; Upender, G; Ramesh, Ch; Mouli, V Chandra

    2012-04-01

    The glasses with composition 75TeO2-10ZnO-(15-x)Nb2O5-xNd2O3 (0≤x≤9 mol%) were prepared using melt quenching method and their physical properties such as density (ρ), molar volume (VM), average crosslink density (nc¯), oxygen packing density (OPD) and number of bonds per unit volume (nb) were determined. Raman spectroscopic studies showed that the glass network consists of TeO4, TeO3+1, TeO3 and NbO6 units as basic structural units. The glass transition temperature (Tg), crystallization onset (To) and thermal stability (ΔT) were determined from DSC thermograms. The Raman and DSC results were found to be correlated with the physical properties. In the optical absorption spectra six absorption bands were observed with different relative intensities at around 464, 522, 576, 742, 801 and 871 nm which are assigned to the transition of electrons from (ground state) 4I9/2→G11/2; 4I9/2→2K3/2, 2G7/2; 4I9/2→4G5/2, 4G7/2; 4I9/2→4S3/2; 4F7/2→2H9/2, 4F5/2 and 4I9/2→2F3/2 respectively. From optical absorption data the energy band gap (Eopt) and Urbach energy (ΔE) were calculated. Copyright © 2012 Elsevier B.V. All rights reserved.

  12. Ho3+-doped AlF3-TeO2-based glass fibers for 2.1 µm laser applications

    Science.gov (United States)

    Wang, S. B.; Jia, Z. X.; Yao, C. F.; Ohishi, Y.; Qin, G. S.; Qin, W. P.

    2017-05-01

    Ho3+-doped AlF3-TeO2-based glass fibers based on AlF3-BaF2-CaF2-YF3-SrF2-MgF2-TeO2 glasses are fabricated by using a rod-in-tube method. The glass rod including a core and a thick cladding layer is prepared by using a suction method, where the thick cladding layer is used to protect the core from the effect of surface crystallization during the fiber drawing. By inserting the glass rod into a glass tube, the glass fibers with relatively low loss (~2.3 dB m-1 @ 1560 nm) are prepared. By using a 38 cm long Ho3+-doped AlF3-TeO2-based glass fiber as the gain medium and a 1965 nm fiber laser as the pump source, 2065 nm lasing is obtained for a threshold pump power of ~220 mW. With further increasing the pump power to ~325 mW, the unsaturated output power of the 2065 nm laser is about 82 mW and the corresponding slope efficiency is up to 68.8%. The effects of the gain fiber length on the lasing threshold, the slope efficiency, and the operating wavelength are also investigated. Our experimental results show that Ho3+-doped AlF3-TeO2-based glass fibers are promising gain media for 2.1 µm laser applications.

  13. Synthesis and physical properties of TEOS-based silica aerogels prepared by two step (acid-base) sol-gel process

    International Nuclear Information System (INIS)

    Venkateswara Rao, A.; Bhagat, S.D.

    2004-01-01

    The experimental results on the synthesis and physical properties of tetra-ethoxy-silane- (TEOS) based silica aerogels produced by two step (acid-base) sol-gel process, are reported. The oxalic acid (A) and NH 4 OH (B) concentrations were varied from 0 to 0.1 M and from 0.4 to 3 M, respectively. Monolithic and transparent aerogels have been obtained for the values of A=0.001 M and B=1 M. The effect of time interval (t) before the base catalyst (NH 4 OH) addition to the acidic sol was studied from 0 to 72 h. The time interval at t=24 h of NH 4 OH addition was found to be the best, in terms of low volume shrinkage, high optical transmission and monolithicity. The molar ratio of EtOH/TEOS (S) was varied from 3 to 7.5. Monolithic and transparent aerogels were obtained for an S value of 6.9. Also, the effects of molar ratio of acidic water, i.e., H 2 O/TEOS (W1) and basic water, i.e., H 2 O/TEOS (W2) on the physical properties of the aerogels have been studied. Highly transparent (about 90%) and monolithic aerogels with lower volume shrinkage ( 2 O):basic (H 2 O). The results are discussed by taking into consideration the hydrolysis and poly-condensation reactions. The aerogels were characterized by scanning electron microscopy (SEM), optical transmission, bulk density, volume shrinkage and porosity measurements. (authors)

  14. X-ray diffraction study on microstructure of Li20-TeO2 glasses; Xsen kaisetsuho ni yoru Li{sub 2}O-TeO{sub 2} kei garasu no mikuro kozo kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Iwadate, Y; Hattori, T; Nishiyama, S; Fukushima, K; Sugawara, Y [Chiba Univ. (Japan); Noda, K. [Japan Atomic Energy Research Inst., Tokyo (Japan)] Tatsumisuna, M. [Osaka Prefectural Univ., Sakai (Japan)] Umesaki, M. [Osaka Industrial Research Inst., Osaka (Japan)

    1998-07-10

    Li2O-TeO2 glasses attract attention because of unique properties such as high density, high refractive index, large dielectric constants and high infrared transmittance. The short range structures of two samples of Li2O-TeO2 glasses (15:85 mol% Li2O-TeO2 and 25:75 mol% Li2O-TeO2) were investigated by X-ray diffraction technique. Interpretation of the obtained radial distribution functions was performed on the basis of the strength comparison method. The following conclusions were obtained: Two types of Te-O bond lengths of 0.18nm and 0.20nm are found in TeO4 tetragonal bipyramid. As network forming units, the TeO4 tetragonal bipyramids and TeO3 trigonal bipyramids are observed. The TeO4 tetragonal bipyramid units are transformed into the TeO3 trigonal bipyramids through the transient species of polyhedral with non-bridging oxygen atoms with increasing content of Li2O. The lone pair of Te atom does not contribute to the formation of the glass network. 17 refs., 6 figs., 2 tabs.

  15. Spectroscopic and optical properties of the VO2+ ion doped TeO2-TiO2-ZnO-Nb2O5 glass system

    Science.gov (United States)

    Swapna; Upender, G.; Sreenivasulu, V.; Prasad, M.

    2016-04-01

    Studies such as optical absorption, Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Electron paramagnetic resonance (EPR) spectroscopy and Differential scanning calorimetry (DSC) were carried out on VO2+ ion doped TeO2-TiO2-ZnO-Nb2O5 glass system. Raman and FTIR spectra of the glasses revealed the presence of [TeO3], [TeO4] and [NbO6] structural units in the glass network. The Urbach energy (Δ E), cut-off wavelength (λ c ), optical band gap ( E opt ), optical basicity (Λ) and electron polarizability ( α) of the glasses were determined from optical absorption studies. The density ( ρ), molar volume ( V m ), oxygen molar volume ( V o ) and refractive index ( n) were also measured. Spin-Hamiltonian parameters were calculated from the EPR studies. When Nb2O5 was increased at the expense of ZnO, the density, optical band gap and Urbach energy of the glasses increased, and the electronic polarizability and optical basicity decreased. The EPR spectra clearly showed that vanadium was in the glass as VO2+ and occupied octahedral sites with tetrahedral compression. Spin-Hamiltonian parameters g‖ and g⊥ decreased as Nb2O5 content increased in the glass. The glass transition temperature ( T g ) also increased with increasing Nb2O5 content in the glass.

  16. Temperature stable LiNbO3 surface acoustic wave device with diode sputtered amorphous TeO2 over-layer

    International Nuclear Information System (INIS)

    Dewan, Namrata; Tomar, Monika; Gupta, Vinay; Sreenivas, K.

    2005-01-01

    Amorphous TeO 2 thin film, sputtered in the O 2 +Ar(25%+75%) gas environment using a metallic tellurium target, has been identified as an attractive negative temperature coefficient of delay (TCD) material that can yield a temperature stable device when combined with a surface acoustic wave (SAW) device based on positive TCD material such as LiNbO 3 . The influence of amorphous TeO 2 over-layer on the SAW propagation characteristics (velocity and temperature coefficient of delay) of the SAW filters (36 and 70 MHz) based on 128 deg. rotated Y-cut X-propagating lithium niobate (128 deg. Y-X LiNbO 3 ) single crystal has been studied. It is found that 0.042 λ thick TeO 2 over-layer on a prefabricated SAW device operating at 36 MHz centre frequency, reduces the TCD of the device from 76 ppm deg. C -1 to almost zero (∼1.4 ppm deg. C -1 ) without deteriorating its efficiency and could be considered as a suitable alternative for temperature stable devices in comparison to conventional SiO 2 over-layer

  17. Thermal analyses, spectral characterization and structural interpretation of Nd3+/Er3+ ions co-doped TeO2-ZnCl2 glasses system

    Science.gov (United States)

    Ahmed, Kasim F.; Ibrahim, Saeed O.; Sahar, Md. R.; Mawlud, Saman Q.; Khizir, Hersh A.

    2017-09-01

    The Nd3+/Er3+ ions co-doped in the system of zinc-tellurite with the composition of (70-2x)TeO2-30ZnCl2-xNd2O3-xEr2O3 concentration from 1.0 to 3.0 mol% (x=1, 2 and 3) glasses were prepared by using conventional melt-quenching technique. The amorphous nature of the glass been confirmed by using X-RAY Diffraction Spectroscopy. Thermal characteristic were determined using a DTA. The obtained results discussed in terms of the glass structure. The glass structure studied by means of FTIR. Seven significant vibrational peaks around 471, 687, 742, 768, 1632, 2833 and 3378 cm-1 which correspond to the structural bonding of the glass are observed in a range of 400-4000cm-1. The peaks observed are consistent with the stretching and bending vibrations of the Te-O, TeO4 trigonal bipyramids, TeO3 trigonal pyramids, Te-O-Te and OH linkages respectively.

  18. The influence of TeO2 on thermal stability and 1.53 μm spectroscopic properties in Er(3+) doped oxyfluorite glasses.

    Science.gov (United States)

    Wang, Fengchao; Cai, Muzhi; Chen, Rong; Jing, Xufeng; Li, Bingpeng; Tian, Ying; Zhang, Junjie; Xu, Shiqing

    2015-11-05

    In this work, the thermal and spectroscopic properties of Er(3+)-doped oxyfluorite glass based on AMCSBYT (AlF3-MgF2-CaF2-SrF2-BaF2-YF3-TeO2) system for different TeO2 concentrations from 6 to 21 mol% is reported. After adding a suitable content of TeO2, the thermal ability of glass improves significantly whose ΔT and S can reach to 118 °C and 4.47, respectively. The stimulated emission cross-section reaches to 7.80×10(-21) cm(2) and the fluorescence lifetime is 12.18 ms. At the same time, the bandwidth characteristics reach to 46.41×10(-21) cm(2) nm and the gain performance is 63.73×10(-21) cm(2) ms. These results show that the optical performances of this oxyfluorite glass are very well. Hence, AMCSBYT glass with superior performances might be a useful material for applications in optical amplifier around 1.53 μm. Copyright © 2015 Elsevier B.V. All rights reserved.

  19. The effects of Nd2O3 concentration in the laser emission of TeO2-ZnO glasses

    Science.gov (United States)

    Moreira, L. M.; Anjos, V.; Bell, M. J. V.; Ramos, C. A. R.; Kassab, L. R. P.; Doualan, D. J. L.; Camy, P.; Moncorgé, R.

    2016-08-01

    The present work reports the modification introduced by different Nd2O3 concentration on optical properties and the laser operation of Nd3+ doped (TeO2-ZnO) bulk tellurite glass. The spectroscopic data are analyzed within the Judd Ofelt formalism framework and the results are compared to the fluorescence lifetime and emission measurements to derive values for the quantum efficiency and the stimulated emission cross section of the considered 4F3/2 → 4I11/2 infrared laser transition around 1062.5 nm. Continuous-wave laser action is achieved with this bulk tellurite glass by pumping the sample inside a standard plan-concave mirror laser cavity with different output couplers. It is possible to observe coherent emission only for the lower concentration (0.5%(wt.) of Nd2 O3). Also laser action could only be observed for this sample with threshold pump power of 73 mW associated with a laser slope efficiency of 8% for an output coupler transmission of 4% indicating that TeO2-ZnO are potential materials for laser action. The results presented in this work together with those previously reported with higher concentration (1.0% (wt) of Nd2O3) determine the adequate Nd2O3 concentration for laser action and guide the correct experimental procedure for TeO2-ZnO glasses preparation.

  20. Observation of high-spin mixed oxidation state of cobalt in ceramic Co3TeO6

    Science.gov (United States)

    Singh, Harishchandra; Ghosh, Haranath; Chandrasekhar Rao, T. V.; Sinha, A. K.; Rajput, Parasmani

    2014-12-01

    We report coexistence of high spin Co3+ and Co2+ in ceramic Co3TeO6 using X-ray Absorption Near Edge Structure (XANES), DC magnetization, and first principles ab-initio calculations. The main absorption line of cobalt Co K-edge XANES spectra, along with a linear combination fit, led us to estimate relative concentration of Co2+ and Co3+as 60:40. The pre edge feature of XANES spectrum shows crystal field splitting of ˜1.26 eV between eg and t2g states, suggesting a mixture of high spin states of both Co2+ and Co3+. Temperature dependent high field DC magnetization measurements reveal dominant antiferromagnetic order with two Neel temperatures (TN1 ˜ 29 K and TN2 ˜ 18 K), consistent with single crystal study. A larger effective magnetic moment is observed in comparison to that reported for single crystal (which contains only Co2+), supports our inference that Co3+ exists in high spin state. Furthermore, we show that both Co2+ and Co3+ being in high spin states constitute a favorable ground state through first principles ab-initio calculations, where Rietveld refined synchrotron X-ray diffraction data are used as input.

  1. Optical Properties of Ternary TeO2-B2O3-ZnO Glass System

    Energy Technology Data Exchange (ETDEWEB)

    Ayuni, J N; Halimah, M K; Talib, Z A; Sidek, H A A; Daud, W M; Zaidan, A W; Khamirul, A M, E-mail: nfarhanayuni@gmail.com, E-mail: halimah@science.upm.edu.my [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia)

    2011-02-15

    A series of ternary tellurite based glasses [(TeO2)70 (B203)30]100-x [ZnO]x glasses with different compositions of ZnO (x= 5 to 30 wt.% in steps of 5 wt.%) have been synthesized by melt quenching method. The role of ZnO to the glasses structure was studied by IR spectroscopy. FTIR spectra revealed broad, weak and strong absorption bands in the investigated range of wavenumber from 280-4000 cm-1 which associated with their corresponding bond modes of vibration and the glass structure. The indirect optical band gap and the direct optical band gap are in the range 2.08-3.12 and 1.54-2.36 eV, respectively. A decrease in the values of energy band gap Eg may come down to the reason that the non-bridging oxygen ion content increases with increasing ZnO content and shifting the band edge to lower energies. The optical band gap and Urbach energies were calculated from the absorption spectra measured between 190 and 900 nm at room temperature. The refractive index, n of the glasses change from 1.84-2.00 while the molar refractivities decrease from 13.06 to 12.00 with the increase of ZnO in mol%.

  2. Optical properties of ternary TeO2-B2O3-ZnO Glass system

    International Nuclear Information System (INIS)

    Nurfarhana Ayuni Joha; Halimah, M.K.; Talib, Z.A.; Sidek, H.A.A.; Daud, W.M.; Zaidan, A.W.; Khamirul, A.M.

    2009-01-01

    Full text: A series of ternary tellurite based glasses [ (TeO 2 ) 70 (B 2 0 3 ) 30 ] 100-x [ZnO] x glasses with different compositions of ZnO (x= 5 to 30 wt.% in steps of 5 wt.%) have been synthesized by melt quenching method. The role of ZnO to the glasses structure was studied by IR spectroscopy. FTIR spectra revealed broad, weak and strong absorption bands in the investigated range of wavenumber from 280 - 4000 cm -1 which associated with their corresponding bond modes of vibration and the glass structure. The indirect optical band gap and the direct optical band gap are in the range 2.08-3.12 and 1.54-2.36 eV, respectively. An increase in the values of energy band gap E g may come down to the reason that the non-bridging oxygen ion content decreases with increasing ZnO content and shifting the band edge to higher energies. The optical band gap and Urbach energies were calculated from the absorption spectra measured between 190 and 900 nm at room temperature. The refractive index, n of the glasses change from 1.84 - 2.00 while the molar refractivities decrease from 13.06 to 12.00 with the increase of ZnO in mol %. (author)

  3. Optical Properties of Ternary TeO2-B2O3-ZnO Glass System

    International Nuclear Information System (INIS)

    Ayuni, J N; Halimah, M K; Talib, Z A; Sidek, H A A; Daud, W M; Zaidan, A W; Khamirul, A M

    2011-01-01

    A series of ternary tellurite based glasses [(TeO2)70 (B203)30]100-x [ZnO]x glasses with different compositions of ZnO (x= 5 to 30 wt.% in steps of 5 wt.%) have been synthesized by melt quenching method. The role of ZnO to the glasses structure was studied by IR spectroscopy. FTIR spectra revealed broad, weak and strong absorption bands in the investigated range of wavenumber from 280-4000 cm-1 which associated with their corresponding bond modes of vibration and the glass structure. The indirect optical band gap and the direct optical band gap are in the range 2.08-3.12 and 1.54-2.36 eV, respectively. A decrease in the values of energy band gap Eg may come down to the reason that the non-bridging oxygen ion content increases with increasing ZnO content and shifting the band edge to lower energies. The optical band gap and Urbach energies were calculated from the absorption spectra measured between 190 and 900 nm at room temperature. The refractive index, n of the glasses change from 1.84-2.00 while the molar refractivities decrease from 13.06 to 12.00 with the increase of ZnO in mol%.

  4. Low temperature deposition: Properties of SiO{sub 2} films from TEOS and ozone by APCVD system

    Energy Technology Data Exchange (ETDEWEB)

    Juarez, H; Diaz, T; Rosendo, E; Garcia, G; Mora, F; Escalante, G [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur and Av. San Claudio, San Manuel 72000, Puebla (Mexico); Pacio, M; GarcIa, A, E-mail: hjuarez@cs.buap.m [Ingenieria Electrica, Secciaan Electranica del Estado Salido, Centro de Investigacian y de Estudios Avanzados del I. P. N., Av. Instituto Politecnico Nacional 2508, San Pedro Zacatenco, 07360 Mexico, D. F. (Mexico)

    2009-05-01

    An Atmospheric Pressure Chemical Vapor Deposition (APCVD) system was implemented for SiO{sub 2} nanometric films deposition on silicon substrates. Tetraethoxysilane (TEOS) and ozone (O{sub 3}) were used and they were mixed into the APCVD system. The deposition temperatures were very low, from 125 to 250 {sup 0}C and the deposition time ranged from 1 to 15 minutes. The measured thicknesses from the deposited SiO{sub 2} films were between 5 and 300 nm. From the by Fourier-Transform Infrared (FTIR) spectra the typical absorption bands of the Si-O bond were observed and it was also observed a dependence on the vibrational modes corresponding to hydroxyl groups with the deposition temperature where the intensity of these vibrations can be related with the grade porosity grade of the films. Furthermore an analytical model has been evoked to determine the activation energy of the reactions in the surface and the gas phase in the deposit films process.

  5. Degradation of TCE by TEOS Coated nZVI in the Presence of Cu(II) for Groundwater Remediation

    International Nuclear Information System (INIS)

    Ramamurthy, A.S.; Eglal, M.M.

    2014-01-01

    The removal of TCE by nanofer zero valent iron (nanofer ZVI) coated with tetraethyl orthosilicate (TEOS) in the presence of Cu(II) at different environmental conditions was studied. The kinetics of TCE degradation by nanofer ZVI was determined. At a dosage of 10 mg of nanofer ZVI, almost 63% of TCE was removed, when Cu(II) and TCE were present. It contrasts with 42% degradation of TCE in the absence of Cu(II). SEM/EDS images indicated that Cu(II) is reduced to form Cu 0 and Cu 2 O. These formations are considered to be responsible for enhancing TCE degradation. Direct reduction involves hydrogenolysis and β-elimination in the transformation of TCE, while indirect reduction involves atomic hydrogen and no direct electron transfer from the metal to reactants. The reduction of activation energy was also noted indicating that the rate limiting step for TCE degradation in the presence of Cu(II) is surface chemical reaction rather than diffusion. Most of iron present in nanofer ZVI get dissolved causing the generation of localized positive charge regions and form metal chlorides. Local accumulation of hydrochloric acid inside the pits regenerates new reactive surfaces to serve as sources of continuous electron generation. No significant effect of TCE was noticed for Cu(II) sequestration.

  6. Friction Properties of Polished Cvd Diamond Films Sliding against Different Metals

    Science.gov (United States)

    Lin, Zichao; Sun, Fanghong; Shen, Bin

    2016-11-01

    Owing to their excellent mechanical and tribological properties, like the well-known extreme hardness, low coefficient of friction and high chemical inertness, chemical vapor deposition (CVD) diamond films have found applications as a hard coating for drawing dies. The surface roughness of the diamond films is one of the most important attributes to the drawing dies. In this paper, the effects of different surface roughnesses on the friction properties of diamond films have been experimentally studied. Diamond films were fabricated using hot filament CVD. The WC-Co (Co 6wt.%) drawing dies were used as substrates. A gas mixture of acetone and hydrogen gas was used as the feedstock gas. The CVD diamond films were polished using mechanical polishing. Polished diamond films with three different surface roughnesses, as well as the unpolished diamond film, were fabricated in order to study the tribological performance between the CVD diamond films and different metals with oil lubrication. The unpolished and polished CVD diamond films are characterized with scanning electron microscope (SEM), atomic force microscope (AFM), surface profilometer, Raman spectrum and X-ray diffraction (XRD). The friction examinations were carried out by using a ball-on-plate type reciprocating friction tester. Low carbide steel, stainless steel, copper and aluminum materials were used as counterpart balls. Based on this study, the results presented the friction coefficients between the polished CVD films and different metals. The friction tests demonstrate that the smooth surface finish of CVD diamond films is beneficial for reducing their friction coefficients. The diamond films exhibit low friction coefficients when slid against the stainless steel balls and low carbide steel ball, lower than that slid against copper ball and aluminum ball, attributed to the higher ductility of copper and aluminum causing larger amount of wear debris adhering to the sliding interface and higher adhesive

  7. Cardiovascular disease (CVD and chronic kidney disease (CKD event rates in HIV-positive persons at high predicted CVD and CKD risk: A prospective analysis of the D:A:D observational study.

    Directory of Open Access Journals (Sweden)

    Mark A Boyd

    2017-11-01

    Full Text Available The Data Collection on Adverse Events of Anti-HIV Drugs (D:A:D study has developed predictive risk scores for cardiovascular disease (CVD and chronic kidney disease (CKD, defined as confirmed estimated glomerular filtration rate [eGFR] ≤ 60 ml/min/1.73 m2 events in HIV-positive people. We hypothesized that participants in D:A:D at high (>5% predicted risk for both CVD and CKD would be at even greater risk for CVD and CKD events.We included all participants with complete risk factor (covariate data, baseline eGFR > 60 ml/min/1.73 m2, and a confirmed (>3 months apart eGFR 1%-5%, >5% and fitted Poisson models to assess whether CVD and CKD risk group effects were multiplicative. A total of 27,215 participants contributed 202,034 person-years of follow-up: 74% male, median (IQR age 42 (36, 49 years, median (IQR baseline year of follow-up 2005 (2004, 2008. D:A:D risk equations predicted 3,560 (13.1% participants at high CVD risk, 4,996 (18.4% participants at high CKD risk, and 1,585 (5.8% participants at both high CKD and high CVD risk. CVD and CKD event rates by predicted risk group were multiplicative. Participants at high CVD risk had a 5.63-fold (95% CI 4.47, 7.09, p < 0.001 increase in CKD events compared to those at low risk; participants at high CKD risk had a 1.31-fold (95% CI 1.09, 1.56, p = 0.005 increase in CVD events compared to those at low risk. Participants' CVD and CKD risk groups had multiplicative predictive effects, with no evidence of an interaction (p = 0.329 and p = 0.291 for CKD and CVD, respectively. The main study limitation is the difference in the ascertainment of the clinically defined CVD endpoints and the laboratory-defined CKD endpoints.We found that people at high predicted risk for both CVD and CKD have substantially greater risks for both CVD and CKD events compared with those at low predicted risk for both outcomes, and compared to those at high predicted risk for only CVD or CKD events. This suggests that CVD and

  8. Tribosystems based on multilayered micro/nanocrystalline CVD diamond coatings =

    Science.gov (United States)

    Shabani, Mohammadmehdi

    A combinacao das caracteristicas do diamante microcristalino (MCD) e nanocristalino (NCD), tais como elevada adesao do MCD e a baixa rugosidade superficial e baixo coeficiente de atrito do NCD, e ideal para aplicacoes tribologicas exigentes. Deste modo, o presente trabalho centrou-se no desenvolvimento de revestimentos em multicamada MCD/NCD. Filmes com dez camadas foram depositados em amostras de cerâmicos de Si3N4 pela tecnica de deposicao quimica em fase vapor assistida por filamento quente (HFCVD). A microestrutura, qualidade do diamante e adesao foram investigadas usando tecnicas como SEM, AFM, espectroscopia Raman, DRX, indentacao Brale e perfilometria otica 3D. Diversas geometrias para aplicacoes distintas foram revestidas: discos e esferas para testes tribologicos a escala laboratorial, e para testes em servico, aneis de empanques mecânicos e pastilhas de corte para torneamento. Nos ensaios tribologicos esfera-sobre-plano em movimento reciproco, sob 10-90% de humidade relativa (RH), os valores medios dos coeficientes de atrito maximo e em estado estacionario sao de 0,32 e 0,09, respetivamente. Em relacao aos coeficientes de desgaste, observou-se um valor minimo de cerca de 5,2x10-8 mm3N-1m-1 para valores intermedios de 20-25% de RH. A humidade relativa tem um forte efeito sobre o valor da carga critica que triplica a partir de 40 N a 10% RH para 120 N a 90% de RH. No intervalo de temperaturas 50-100 °C, as cargas criticas sao semelhantes as obtidas em condicoes de baixa RH ( 10-25%). A vida util das ferramentas com revestimento de dez camadas alternadas MCD/NCD e 24 mum de espessura total no torneamento de um composito de matriz metalica Al- 15 vol% Al2O3 (Al-MMC) e melhor do que a maioria das ferramentas de diamante CVD encontradas na literatura, e semelhante a maioria das ferramentas de diamante policristalino (PCD). A formacao de cratera ocorre por desgaste sucessivo das varias camadas, atrasando a delaminacao total do revestimento de diamante do

  9. Impact of the new equation of state of seawater (TEOS-10) on the estimates of water mass mixture and meridional transport in the Atlantic Ocean

    Science.gov (United States)

    Almeida, Lucas; de Azevedo, José Luiz Lima; Kerr, Rodrigo; Araujo, Moacyr; Mata, Mauricio M.

    2018-03-01

    The equation of state of seawater (EOS) provides a simple way to link the properties of seawater that are the most important for ocean dynamics and the ocean-atmosphere climate system. In 2010, the set of equations used to derive all thermodynamic properties of seawater were updated using a thermodynamic approach. The new approach, named TEOS-10, results in better estimates of seawater properties, such as salinity and temperature, when compared to the previous EOS version (EOS-80). Since several physical processes in the oceans are driven by these properties, improvements in the EOS performance are expected to lead to a better and more realistic representation of the ocean. This work focuses on assessing the main differences of the: (i) contribution of water masses to a total mixture, (ii) baroclinic velocity, and (iii) volume and heat transport, as calculated by the EOS-80 and by the TEOS-10, along four zonal transects at 26.5°N, 10°N, 11°S, and 34.5°S in the Atlantic Ocean. The density differences (always between TEOS-10 and EOS-80) increase with depth and hence the results indicate that the most significant difference in the water mass contributions was found for Antarctic Bottom Water. Within that layer, the differences reach up to 10% on its fraction of the mixture when calculated by the TEOS-10, although the difference in the North Atlantic Deep Water contribution was not negligible either. The estimated baroclinic velocities showed considerable differences in all studied areas, being more significant over boundary current systems. The Gulf Stream presented lower velocity, while the Brazil Current presented increasing velocity when using TEOS-10. The comparison between values computed for volume transported by the Atlantic Meridional Overturning Circulation showed a total difference of about +6%, which cannot be neglected when considering the space and time variability involved. The heat transport showed significant differences in the study areas at the

  10. Effects of Sm3+/Yb3+ co-doping and temperature on the Raman, IR spectra and structure of [TeO2-GeO2-K2O-Sm2O3/Yb2O3] glasses

    International Nuclear Information System (INIS)

    Shaltout, I.; Badr, Y.

    2006-01-01

    Effects of Sm 3+ /Yb 3+ co-doping on Raman scattering, IR absorption, temperature dependence of the Raman spectra up to 210 o C and the structure of two glass systems of the composition (80TeO 2 -10GeO 2 -8K 2 O-2Sm 2 O 3 /Yb 2 O 3 ) is discussed. It was found that the addition of Yb 3+ to the glass very strongly enhances the intensities of the antistokes' Raman bands at 155, 375, 557 and 828 cm -1 and quenches both the intensities of the stokes' vibration modes of the TeO 4 units in the range of 120-770 cm -1 and the intensities of the OH - stretching vibration modes in the range of 2600-3300 cm -1 . Sm 2 O 3 /Yb 2 O 3 rare earth co-doping has a great influence on removing and/or changing the nature of the OH - groups. The appearance and splitting of the stretching vibration modes of the OH - groups at lower frequencies (2770, 2970 cm -1 ) for the Sm +3 singly doped glass sample, compared to the band at ∼3200 cm -1 for the Sm 3+ /Yb 3+ co-doped glass sample, suggested that the OH - groups are more strongly bonded and incorporated with the glass matrix for the singly doped glass. Heating the sample up continuously weakens the hydrogen bonding of the OH - groups to the glass matrix leading to creation of NBO and breakdown of the connectivity of the OH - groups to the TeO 4 , TeO 3+1 and TeO 3 structural units. Raman bands at 286, 477, 666 and 769 cm -1 were assigned to its respective vibrations of Te 2 O 7 , TeO 4 -4 species, the (Te-O-Te) bending vibrations of the TeO 4 triagonal bipyramids (tbps), the axial symmetric stretching vibration modes (Te ax -O) s with bridging oxygen BO atoms and to the (Te-O) nbo non-bridging stretching vibration modes of the TeO 3+1 and/or TeO 3 pyramids

  11. Absolute Salinity, ''Density Salinity'' and the Reference-Composition Salinity Scale: present and future use in the seawater standard TEOS-10

    Directory of Open Access Journals (Sweden)

    D. G. Wright

    2011-01-01

    Full Text Available Salinity plays a key role in the determination of the thermodynamic properties of seawater and the new TEOS-101 standard provides a consistent and effective approach to dealing with relationships between salinity and these thermodynamic properties. However, there are a number of practical issues that arise in the application of TEOS-10, both in terms of accuracy and scope, including its use in the reduction of field data and in numerical models.

    First, in the TEOS-10 formulation for IAPSO Standard Seawater, the Gibbs function takes the Reference Salinity as its salinity argument, denoted SR, which provides a measure of the mass fraction of dissolved material in solution based on the Reference Composition approximation for Standard Seawater. We discuss uncertainties in both the Reference Composition and the Reference-Composition Salinity Scale on which Reference Salinity is reported. The Reference Composition provides a much-needed fixed benchmark but modified reference states will inevitably be required to improve the representation of Standard Seawater for some studies. However, the Reference-Composition Salinity Scale should remain unaltered to provide a stable representation of salinity for use with the TEOS-10 Gibbs function and in climate change detection studies.

    Second, when composition anomalies are present in seawater, no single salinity variable can fully represent the influence of dissolved material on the thermodynamic properties of seawater. We consider three distinct representations of salinity that have been used in previous studies and discuss the connections and distinctions between them. One of these variables provides the most accurate representation of density possible as well as improvements over Reference Salinity for the determination of other thermodynamic properties. It is referred to as "Density Salinity" and is represented by the symbol

  12. Movers and stayers: The geography of residential mobility and CVD hospitalisations in Auckland, New Zealand.

    Science.gov (United States)

    Exeter, Daniel J; Sabel, Clive E; Hanham, Grant; Lee, Arier C; Wells, Susan

    2015-05-01

    The association between area-level disadvantage and health and social outcomes is unequivocal. However, less is known about the health impact of residential mobility, particularly at intra-urban scales. We used an encrypted National Health Index (eNHI) number to link individual-level data recorded in routine national health databases to construct a cohort of 641,532 participants aged 30+ years to investigate the association between moving and CVD hospitalisations in Auckland, New Zealand. Residential mobility was measured for participants according to changes in the census Meshblock of usual residence, obtained from the Primary Health Organisation (PHO) database for every calendar quarter between 1/1/2006 and 31/12/2012. The NZDep2006 area deprivation score at the start and end of a participant's inclusion in the study was used to measure deprivation mobility. We investigated the relative risk of movers being hospitalised for CVD relative to stayers using multi-variable binomial regression models, controlling for age, gender, deprivation and ethnicity. Considered together, movers were 1.22 (1.19-1.26) times more likely than stayers to be hospitalised for CVD. Using the 5×5 deprivation origin-destination matrix to model a patient's risk of CVD based on upward, downward or sideways deprivation mobility, movers within the least deprived (NZDep2006 Quintile 1) areas were 10% less likely than stayers to be hospitalised for CVD, while movers within the most deprived (NZDep2006 Q5) areas were 45% more likely than stayers to have had their first CVD hospitalisation in 2006-2012 (RR: 1.45 [1.35-1.55]). Participants who moved upward also had higher relative risks of having a CVD event, although their risk was less than those observed for participants experiencing downward deprivation mobility. This research suggests that residential mobility is an important determinant of CVD in Auckland. Further investigation is required to determine the impact moving has on the risk of

  13. Rapid growth of single-layer graphene on the insulating substrates by thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.Y. [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China); Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Dai, D.; Chen, G.X.; Yu, J.H. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Nishimura, K. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Advanced Nano-processing Engineering Lab, Mechanical Systems Engineering, Kogakuin University (Japan); Lin, C.-T. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Jiang, N., E-mail: jiangnan@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhan, Z.L., E-mail: zl_zhan@sohu.com [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2015-08-15

    Highlights: • A rapid thermal CVD process has been developed to directly grow graphene on the insulating substrates. • The treating time consumed is ≈25% compared to conventional CVD procedure. • Single-layer and few-layer graphene can be formed on quartz and SiO{sub 2}/Si substrates, respectively. • The formation of thinner graphene at the interface is due to the fast precipitation rate of carbon atoms during cooling. - Abstract: The advance of CVD technique to directly grow graphene on the insulating substrates is particularly significant for further device fabrication. As graphene is catalytically grown on metal foils, the degradation of the sample properties is unavoidable during transfer of graphene on the dielectric layer. Moreover, shortening the treatment time as possible, while achieving single-layer growth of graphene, is worthy to be investigated for promoting the efficiency of mass production. Here we performed a rapid heating/cooling process to grow graphene films directly on the insulating substrates by thermal CVD. The treating time consumed is ≈25% compared to conventional CVD procedure. In addition, we found that high-quality, single-layer graphene can be formed on quartz, but on SiO{sub 2}/Si substrate only few-layer graphene can be obtained. The pronounced substrate effect is attributed to the different dewetting behavior of Ni films on the both substrates at 950 °C.

  14. Applicability of the Existing CVD Risk Assessment Tools to Type II Diabetics in Oman: A Review

    Directory of Open Access Journals (Sweden)

    Abdulhakeem Al-Rawahi

    2015-09-01

    Full Text Available Patients with type II diabetes (T2DM have an elevated risk for cardiovascular disease (CVD, and it is considered to be a leading cause of morbidity and premature mortality in these patients. Many traditional risk factors such as age, male sex, hypertension, dyslipidemia, glycemic control, diabetes duration, renal dysfunction, obesity, and smoking have been studied and identified as independent factors for CVD. Quantifying the risk of CVD among diabetics using the common risk factors in order to plan the treatment and preventive measures is important in the management of these patients as recommended by many clinical guidelines. Therefore, several risk assessment tools have been developed in different parts of the world for this purpose. These include the tools that have been developed for general populations and considered T2DM as a risk factor, and the tools that have been developed for T2DM populations specifically. However, due to the differences in sociodemographic factors and lifestyle patterns, as well as the differences in the distribution of various CVD risk factors in different diabetic populations, the external applicability of these tools on different populations is questionable. This review aims to address the applicability of the existing CVD risk models to the Omani diabetic population.

  15. Reference Intervals for Non-Fasting CVD Lipids and Inflammation Markers in Pregnant Indigenous Australian Women.

    Science.gov (United States)

    Schumacher, Tracy L; Oldmeadow, Christopher; Clausen, Don; Weatherall, Loretta; Keogh, Lyniece; Pringle, Kirsty G; Rae, Kym M

    2017-10-14

    Indigenous Australians experience high rates of cardiovascular disease (CVD). The origins of CVD may commence during pregnancy, yet few serum reference values for CVD biomarkers exist specific to the pregnancy period. The Gomeroi gaaynggal research project is a program that undertakes research and provides some health services to pregnant Indigenous women. Three hundred and ninety-nine non-fasting samples provided by the study participants (206 pregnancies and 175 women) have been used to construct reference intervals for CVD biomarkers during this critical time. A pragmatic design was used, in that women were not excluded for the presence of chronic or acute health states. Percentile bands for non-linear relationships were constructed according to the methods of Wright and Royston (2008), using the xriml package in StataIC 13.1. Serum cholesterol, triglycerides, cystatin-C and alkaline phosphatase increased as gestational age progressed, with little change seen in high-sensitivity C-Reactive Protein and γ glutamyl transferase. Values provided in the reference intervals are consistent with findings from other research projects. These reference intervals will form a basis with which future CVD biomarkers for pregnant Indigenous Australian women can be compared.

  16. Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

    Science.gov (United States)

    Gurram, M.; Omar, S.; Zihlmann, S.; Makk, P.; Li, Q. C.; Zhang, Y. F.; Schönenberger, C.; van Wees, B. J.

    2018-01-01

    We study room-temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapor deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO2 substrate-based graphene devices, and we obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behavior of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spin-injection polarization of the high-resistance contacts can be modulated by dc bias from -0.3 to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features point to the distinctive spin-injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.

  17. Effect of pulse biasing on the morphology of diamond films grown by hot filament CVD

    International Nuclear Information System (INIS)

    Beake, B.D.; Hussain, I.U.; Rego, C.; Ahmed, W.

    1999-01-01

    There has been considerable interest in the chemical vapour deposition (CVD) of diamond due to its unique mechanical, optical and electronic properties, which make it useful for many applications. For use in optical and electronic applications further developments in the CVD process are required to control the surface morphology and crystal size of the diamond films. These will require a detailed understanding of both the nucleation and growth processes that effect the properties. The technique of bias enhanced nucleation (BEN) of diamond offers better reproducibility than conventional pre-treatment methods such as mechanical abrasion. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used study the surface modification of diamond films on silicon substrates during pulse biased growth in a hot filament CVD reactor. Pre-abraded silicon substrates were subjected to a three-step sequential growth process: (i) diamond deposition under standard CVD conditions, (ii) bias pre-treatment and (iii) deposition under standard conditions. The results show that the bias pre-treatment time is a critical parameter controlling the surface morphology and roughness of the diamond films deposited. Biasing reduces the surface roughness from 152 nm for standard CVD diamond to 68 nm for the 2.5 minutes pulse biased film. Further increase in the bias time results in an increase in surface roughness and crystallite size. (author)

  18. Flavonoids and Reduction of Cardiovascular Disease (CVD) in Chronic Obstructive Pulmonary Disease (COPD).

    Science.gov (United States)

    Russo, Patrizia; Prinzi, Giulia; Lamonaca, Palma; Cardaci, Vittorio; Fini, Massimo

    2018-05-13

    Chronic obstructive pulmonary disease (COPD) and cardiovascular diseases (CV) often coexist. COPD and CVD are complex diseases characterized by a strict interaction between environment and genetic. The mechanisms linking these two diseases are complex, multifactorial and not entirely understood, influencing the therapeutic approach. COPD is characterized by several comorbidities, it is hypothesizable that treatment of cardiovascular co-morbidities may reduce morbidity and mortality. Flavonoids are an important class of plant low molecular weight secondary metabolites (SMs). Convincing data from laboratory, epidemiological, and human clinical studies point to an important effects on CVD risk prevention. This review aims to provide up-to-date information on the ability of Flavonoids to reduce the CVD risk. Current studies support the potential of Flavonoids to prevent the risk of CVD. Well-designed clinical studies are suggested to evaluate advantages and limits of Flavonoids for managing CVD comorbidity in COPD. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  19. High quality aluminide and thermal barrier coatings deposition for new and service exposed parts by CVD techniques

    Energy Technology Data Exchange (ETDEWEB)

    Pedraza, F.; Tuohy, C.; Whelan, L.; Kennedy, A.D. [SIFCO Turbine Components, Carrigtwohill, Cork (Ireland)

    2004-07-01

    In this work, the performance of CVD aluminide coatings is compared to that of coatings deposited by the classical pack cementation technique using standard SIFCO procedures. The CVD coatings always seem to behave better upon exposure to isothermal and cyclic oxidation conditions. This is explained by a longer term stability of CVD coatings, with higher Al amounts in the diffusion zone and less refractory element precipitation in the additive layer. The qualities of Pt/Al coatings by out-of-pack and CVD are also compared as a previous step for further thermal barrier coating deposition. As an example, YSZ thermal barrier coatings are deposited by MO-CVD on Pt/Al CVD bond coats rendering adherent and thick coatings around the surface of turbine blades. This process under development does not require complex manipulation of the component to be coated. (orig.)

  20. Non-classical crystallization of thin films and nanostructures in CVD and PVD processes

    CERN Document Server

    Hwang, Nong Moon

    2016-01-01

    This book provides a comprehensive introduction to a recently-developed approach to the growth mechanism of thin films and nanostructures via chemical vapour deposition (CVD). Starting from the underlying principles of the low pressure synthesis of diamond films, it is shown that diamond growth occurs not by individual atoms but by charged nanoparticles. This newly-discovered growth mechanism turns out to be general to many CVD and some physical vapor deposition (PVD) processes. This non-classical crystallization is a new paradigm of crystal growth, with active research taking place on growth in solution, especially in biomineralization processes. Established understanding of the growth of thin films and nanostructures is based around processes involving individual atoms or molecules. According to the author’s research over the last two decades, however, the generation of charged gas phase nuclei is shown to be the rule rather than the exception in the CVD process, and charged gas phase nuclei are actively ...

  1. Polymer Adsorption on Graphite and CVD Graphene Surfaces Studied by Surface-Specific Vibrational Spectroscopy.

    Science.gov (United States)

    Su, Yudan; Han, Hui-Ling; Cai, Qun; Wu, Qiong; Xie, Mingxiu; Chen, Daoyong; Geng, Baisong; Zhang, Yuanbo; Wang, Feng; Shen, Y R; Tian, Chuanshan

    2015-10-14

    Sum-frequency vibrational spectroscopy was employed to probe polymer contaminants on chemical vapor deposition (CVD) graphene and to study alkane and polyethylene (PE) adsorption on graphite. In comparing the spectra from the two surfaces, it was found that the contaminants on CVD graphene must be long-chain alkane or PE-like molecules. PE adsorption from solution on the honeycomb surface results in a self-assembled ordered monolayer with the C-C skeleton plane perpendicular to the surface and an adsorption free energy of ∼42 kJ/mol for PE(H(CH2CH2)nH) with n ≈ 60. Such large adsorption energy is responsible for the easy contamination of CVD graphene by impurity in the polymer during standard transfer processes. Contamination can be minimized with the use of purified polymers free of PE-like impurities.

  2. Cold Vacuum Dryer (CVD) Facility Fire Protection System Design Description (SYS 24)

    Energy Technology Data Exchange (ETDEWEB)

    SINGH, G.

    2000-10-17

    This system design description (SDD) addresses the Cold Vacuum Drying (CVD) Facility fire protection system (FPS). The primary features of the FPS for the CVD are a fire alarm and detection system, automatic sprinklers, and fire hydrants. The FPS also includes fire extinguishers located throughout the facility and fire hydrants to assist in manual firefighting efforts. In addition, a fire barrier separates the operations support (administrative) area from the process bays and process bay support areas. Administrative controls to limit combustible materials have been established and are a part of the overall fire protection program. The FPS is augmented by assistance from the Hanford Fire Department (HED) and by interface systems including service water, electrical power, drains, instrumentation and controls. This SDD, when used in conjunction with the other elements of the definitive design package, provides a complete picture of the FPS for the CVD Facility.

  3. Development of CVD Diamond for Industrial Applications Final Report CRADA No. TC-2047-02

    Energy Technology Data Exchange (ETDEWEB)

    Caplan, M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Olstad, R. [General Atomics, San Diego, CA (United States); Jory, H. [Communications and Power Industries, Palo Alto, CA (United States); Vikharov, A. L. [Russian Academy of Sciences (RAS), Moscow (Russian Federation)

    2017-09-08

    This project was a collaborative effort to develop and demonstrate a new millimeter microwave assisted chemical vapor deposition(CVD) process for manufacturing large diamond disks with greatly reduced processing times and costs from those now available. In the CVD process, carbon based gases (methane) and hydrogen are dissociated into plasma using microwave discharge and then deposited layer by layer as polycrystalline diamond onto a substrate. The available low frequency (2.45GHz) microwave sources used elsewhere (De Beers) result in low density plasmas and low deposition rates: 4 inch diamond disks take 6-8 weeks to process. The new system developed in this project uses a high frequency 30GHz Gyrotron as the microwave source and a quasi-optical CVD chamber resulting in a much higher density plasma which greatly reduced the diamond processing times (1-2 weeks)

  4. CVD diamond based soft X-ray detector with fast response

    International Nuclear Information System (INIS)

    Li Fang; Hou Lifei; Su Chunxiao; Yang Guohong; Liu Shenye

    2010-01-01

    A soft X-ray detector has been made with high quality chemical vapor deposited (CVD) diamond and the electrical structure of micro-strip. Through the measurement of response time on a laser with the pulse width of 10 ps, the full width at half maximum of the data got in the oscilloscope was 115 ps. The rise time of the CVD diamond detector was calculated to be 49 ps. In the experiment on the laser prototype facility, the signal got by the CVD diamond detector was compared with that got by a soft X-ray spectrometer. Both signals coincided well. The detector is proved to be a kind of reliable soft X-ray detector with fast response and high signal-to-noise ratio. (authors)

  5. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  6. Influence of surface morphology and microstructure on performance of CVD tungsten coating under fusion transient thermal loads

    Energy Technology Data Exchange (ETDEWEB)

    Lian, Youyun, E-mail: lianyy@swip.ac.cn [Southwestern Institute of Physics, Chengdu (China); Liu, Xiang; Wang, Jianbao; Feng, Fan [Southwestern Institute of Physics, Chengdu (China); Lv, Yanwei; Song, Jiupeng [China National R& D Center for Tungsten Technology, Xiamen Tungsten Co. Ltd, 361026 Xiamen (China); Chen, Jiming [Southwestern Institute of Physics, Chengdu (China)

    2016-12-30

    Highlights: • Thick CVD-W coatingswere deposited at a rapid growth rate. • The polished CVD-W coatings have highly textured structure and exhibited a very strong preferred orientation. • The polished CVD tungsten coatings show superior thermal shock resistance as compared with that of the as-deposited coatings. • The crack formation of the polished CVD-W was almost suppressed at an elevated temperature. - Abstract: Thick tungsten coatings have been deposited by chemical vapor deposition (CVD) at a rapid growth rate. A series of tungsten coatings with different thickness and surface morphology were prepared. The surface morphology, microstructure and preferred orientation of the CVD tungsten coatings were investigated. Thermal shock analyses were performed by using an electron beam facility to study the influence of the surface morphology and the microstructure on the thermal shock resistance of the CVD tungsten coatings. Repetitive (100 pulses) ELMs-like thermal shock loads were applied at various temperatures between room temperature and 600 °C with pulse duration of 1 ms and an absorbed power density of up to 1 GW/m{sup 2}. The results of the tests demonstrated that the specific surface morphology and columnar crystal structure of the CVD tungsten have significant influence on the surface cracking threshold and crack propagation of the materials. The CVD tungsten coatings with a polished surface show superior thermal shock resistance as compared with that of the as-deposited coatings with a rough surface.

  7. Association of BMI with risk of CVD mortality and all-cause mortality.

    Science.gov (United States)

    Kee, Chee Cheong; Sumarni, Mohd Ghazali; Lim, Kuang Hock; Selvarajah, Sharmini; Haniff, Jamaiyah; Tee, Guat Hiong Helen; Gurpreet, Kaur; Faudzi, Yusoff Ahmad; Amal, Nasir Mustafa

    2017-05-01

    To determine the relationship between BMI and risk of CVD mortality and all-cause mortality among Malaysian adults. Population-based, retrospective cohort study. Participants were followed up for 5 years from 2006 to 2010. Mortality data were obtained via record linkages with the Malaysian National Registration Department. Multiple Cox regression was applied to compare risk of CVD and all-cause mortality between BMI categories adjusting for age, gender and ethnicity. Models were generated for all participants, all participants the first 2 years of follow-up, healthy participants, healthy never smokers, never smokers, current smokers and former smokers. All fourteen states in Malaysia. Malaysian adults (n 32 839) aged 18 years or above from the third National Health and Morbidity Survey. Total follow-up time was 153 814 person-years with 1035 deaths from all causes and 225 deaths from CVD. Underweight (BMIBMI ≥30·0 kg/m2) was associated with a heightened risk of CVD mortality. Overweight (BMI=25·0-29·9 kg/m2) was inversely associated with risk of all-cause mortality. Underweight was significantly associated with all-cause mortality in all models except for current smokers. Overweight was inversely associated with all-cause mortality in all participants. Although a positive trend was observed between BMI and CVD mortality in all participants, a significant association was observed only for severe obesity (BMI≥35·0 kg/m2). Underweight was associated with increased risk of all-cause mortality and obesity with increased risk of CVD mortality. Therefore, maintaining a normal BMI through leading an active lifestyle and healthy dietary habits should continue to be promoted.

  8. Thermoluminescent properties of CVD diamond: applications to ionising radiation dosimetry; Proprietes thermoluminescentes du diamant CVD: applications a la dosimetrie des rayonnements ionisants

    Energy Technology Data Exchange (ETDEWEB)

    Petitfils, A

    2007-09-15

    Remarkable properties of synthetic diamond (human soft tissue equivalence, chemical stability, non-toxicity) make this material suitable for medical application as thermoluminescent dosimeter (TLD). This work highlights the interest of this material as radiotherapy TLD. In the first stage of this work, we looked after thermoluminescent (TL) and dosimetric properties of polycrystalline diamond made by Chemically Vapor Deposited (CVD) synthesis. Dosimetric characteristics are satisfactory as TLD for medical application. Luminescence thermal quenching on diamond has been investigated. This phenomenon leads to a decrease of dosimetric TL peak sensitivity when the heating rate increases. The second part of this work analyses the use of synthetic diamond as TLD in radiotherapy. Dose profiles, depth dose distributions and the cartography of an electron beam obtained with our samples are in very good agreement with results from an ionisation chamber. It is clearly shown that CVD) diamond is of interest to check beams of treatment accelerators. The use of these samples in a control of treatment with Intensity Modulated Radiation Therapy underlines good response of synthetic diamond in high dose gradient areas. These results indicate that CVD diamond is a promising material for radiotherapy dosimetry. (author)

  9. Validation of a model to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD: the rotterdam ischemic heart disease and stroke computer simulation (RISC) model.

    Science.gov (United States)

    van Kempen, Bob J H; Ferket, Bart S; Hofman, Albert; Steyerberg, Ewout W; Colkesen, Ersen B; Boekholdt, S Matthijs; Wareham, Nicholas J; Khaw, Kay-Tee; Hunink, M G Myriam

    2012-12-06

    We developed a Monte Carlo Markov model designed to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD. Internal, predictive, and external validity of the model have not yet been established. The Rotterdam Ischemic Heart Disease and Stroke Computer Simulation (RISC) model was developed using data covering 5 years of follow-up from the Rotterdam Study. To prove 1) internal and 2) predictive validity, the incidences of coronary heart disease (CHD), stroke, CVD death, and non-CVD death simulated by the model over a 13-year period were compared with those recorded for 3,478 participants in the Rotterdam Study with at least 13 years of follow-up. 3) External validity was verified using 10 years of follow-up data from the European Prospective Investigation of Cancer (EPIC)-Norfolk study of 25,492 participants, for whom CVD and non-CVD mortality was compared. At year 5, the observed incidences (with simulated incidences in brackets) of CHD, stroke, and CVD and non-CVD mortality for the 3,478 Rotterdam Study participants were 5.30% (4.68%), 3.60% (3.23%), 4.70% (4.80%), and 7.50% (7.96%), respectively. At year 13, these percentages were 10.60% (10.91%), 9.90% (9.13%), 14.20% (15.12%), and 24.30% (23.42%). After recalibrating the model for the EPIC-Norfolk population, the 10-year observed (simulated) incidences of CVD and non-CVD mortality were 3.70% (4.95%) and 6.50% (6.29%). All observed incidences fell well within the 95% credibility intervals of the simulated incidences. We have confirmed the internal, predictive, and external validity of the RISC model. These findings provide a basis for analyzing the effects of modifying cardiovascular disease risk factors on the burden of CVD with the RISC model.

  10. Hard coatings by plasma CVD on polycarbonate for automotive and optical applications

    International Nuclear Information System (INIS)

    Schmauder, T.; Nauenburg, K.-D.; Kruse, K.; Ickes, G.

    2006-01-01

    In many applications, plastic surfaces need coatings as a protection against abrasion or weathering. Leybold Optics is developing Plasma CVD processes and machinery for transparent hard coatings (THC) for polycarbonate parts. In this paper we present the current features and remaining challenges of this technique. The coatings generally show excellent adhesion. Abrasion resistance is superior to commonly used lacquers. Climate durability of the coating has been improved to pass the tests demanded by automotive specifications. Current activities are focused on improving the durability under exposure to UV radiation. Estimations show that our high-rate plasma CVD hard coating process is also economically competitive to lacquering

  11. Anisotropy and dimensional characteristics in CVD route Y1Ba2Cu3O7-δ

    International Nuclear Information System (INIS)

    Watanabe, K.; Kobayashi, N.; Awaji, S.; Yamane, H.; Hirai, T.; Muto, Y.

    1993-01-01

    The anisotropic behaviors of the upper critical field B c2 and the critical current density J c were investigated in Y 1 Ba 2 Cu 3 O 7-δ films prepared by a chemical vapor deposition (CVD) route. The angular dependence of J c at fixed temperature, the field dependence of J c at fixed angle, and the temperature dependence of J c at fixed field were measured. The obtained results were explored in terms of the dimensional superconducting characteristics. The important information on the anisotropic behaviors of J c in CVD-Y 1 Ba 2 Cu 3 O 7-δ was discussed from a viewpoint of the flux pinning. (orig.)

  12. Effects of boron addition on a-Si90Ge10:H films obtained by low frequency plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Perez, Arllene M; Renero, Francisco J; Zuniga, Carlos; Torres, Alfonso; Santiago, Cesar

    2005-01-01

    Optical, structural and electric properties of (a-(Si 90 Ge 10 ) 1-y B y :H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10 -3 to 10 1 Ω -1 cm -1 when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV

  13. Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Hamidinezhad, Habib; Wahab, Yussof; Othaman, Zulkafli; Ismail, Abd Khamim

    2011-01-01

    Silicon nanowires (SiNWs) were synthesized from pure silane precursor gas and Au nanoparticles catalyst at below Au-Si eutectic temperature. The SiNWs were grown onto Si (1 1 1) substrates using very high frequency plasma enhanced chemical vapor deposition via a vapor-solid-solid mechanism at temperatures ranging from 363 to 230 deg. C. The morphology of the synthesized SiNWs was characterized by means of field emission scanning electron microscope equipped with energy dispersive X-ray, high resolution transmission electron microscopy, X-ray diffraction technique and Raman spectroscope. Results demonstrated that the SiNWs can be grown at the temperature as low as 250 deg. C. In addition, it was revealed that the grown wires were silicon-crystallized.

  14. Microwave plasma enhanced chemical vapor deposition growth of few-walled carbon nanotubes using catalyst derived from an iron-containing block copolymer precursor

    International Nuclear Information System (INIS)

    Wang Peng; Lu, Jennifer; Zhou, Otto

    2008-01-01

    The microwave plasma enhanced chemical vapor deposition (MPECVD) method is now commonly used for directional and conformal growth of carbon nanotubes (CNTs) on supporting substrates. One of the shortcomings of the current process is the lack of control of the diameter and diameter distribution of the CNTs due to difficulties in synthesizing well-dispersed catalysts. Recently, block copolymer derived catalysts have been developed which offer the potential of fine control of both the size of and the spacing between the metal clusters. In this paper we report the successful growth of CNTs with narrow diameter distribution using polystyrene-block-polyferrocenylethylmethylsilane (PS-b-PFEMS) as the catalyst precursor. The study shows that higher growth pressure leads to better CNT growth. Besides the pressure, the effects on the growth of CNTs of the growth parameters, such as temperature and precursor gas ratio, are also studied

  15. Effects of the gate dielectric on the subthreshold transport of carbon nanotube network transistors grown by using plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Jeong, Seung Geun; Park, Wan Jun

    2010-01-01

    In this study, we investigated the subthreshold slope of random network carbon nanotube transistors with different geometries and passivations. Single-wall carbon nanotubes with lengths of 1-2 m were grown by using plasma-enhanced chemical vapor deposition to form the transistor channels. A critical channel length, where the subthreshold slope was saturated, of 7 μm was obtained. This was due to the percolational behavior of the nanotube random networks. With the dielectric passivation, the subthreshold slope was dramatically reduced from 9 V/decade to 0.9 V/decade by reducing interfacial trap sites, which then reduced the interface capacitance between the nanotube network and the gate dielectric.

  16. Tensile test of a silicon microstructure fully coated with submicrometer-thick diamond like carbon film using plasma enhanced chemical vapor deposition method

    Science.gov (United States)

    Zhang, Wenlei; Uesugi, Akio; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

    2017-06-01

    This paper reports the tensile properties of single-crystal silicon (SCS) microstructures fully coated with sub-micrometer thick diamond like carbon (DLC) film using plasma enhanced chemical vapor deposition (PECVD). To minimize the deformations or damages caused by non-uniform coating of DLC, which has high compression residual stress, released SCS specimens with the dimensions of 120 µm long, 4 µm wide, and 5 µm thick were coated from the top and bottom side simultaneously. The thickness of DLC coating is around 150 nm and three different bias voltages were used for deposition. The tensile strength improved from 13.4 to 53.5% with the increasing of negative bias voltage. In addition, the deviation in strength also reduced significantly compared to bare SCS sample.

  17. Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M F; Sanz, M M; Munoz, E [ISOM-Universidad Politecnica de Madrid (UPM). ETSIT, Madrid (Spain); Tanarro, I [Instituto de Estructura de la Materia, CSIC, Madrid (Spain); Jimenez, A, E-mail: itanarro@iem.cfmac.csic.e [Departamento Electronica, Escuela Politecnica Superior, Universidad de Alcala, Alcala de Henares, Madrid (Spain)

    2010-12-15

    In this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH{sub 4} and NH{sub 3} precursors and the formation of H{sub 2} and N{sub 2} have been analysed by mass spectrometry as a function of the NH{sub 3}/SiH{sub 4} flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.

  18. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2011-08-15

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  19. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    International Nuclear Information System (INIS)

    Ghrib, M.; Gaidi, M.; Ghrib, T.; Khedher, N.; Ben Salam, M.; Ezzaouia, H.

    2011-01-01

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  20. Absolute Salinity, ''Density Salinity'' and the Reference-Composition Salinity Scale: present and future use in the seawater standard TEOS-10

    Science.gov (United States)

    Wright, D. G.; Pawlowicz, R.; McDougall, T. J.; Feistel, R.; Marion, G. M.

    2011-01-01

    Salinity plays a key role in the determination of the thermodynamic properties of seawater and the new TEOS-101 standard provides a consistent and effective approach to dealing with relationships between salinity and these thermodynamic properties. However, there are a number of practical issues that arise in the application of TEOS-10, both in terms of accuracy and scope, including its use in the reduction of field data and in numerical models. First, in the TEOS-10 formulation for IAPSO Standard Seawater, the Gibbs function takes the Reference Salinity as its salinity argument, denoted SR, which provides a measure of the mass fraction of dissolved material in solution based on the Reference Composition approximation for Standard Seawater. We discuss uncertainties in both the Reference Composition and the Reference-Composition Salinity Scale on which Reference Salinity is reported. The Reference Composition provides a much-needed fixed benchmark but modified reference states will inevitably be required to improve the representation of Standard Seawater for some studies. However, the Reference-Composition Salinity Scale should remain unaltered to provide a stable representation of salinity for use with the TEOS-10 Gibbs function and in climate change detection studies. Second, when composition anomalies are present in seawater, no single salinity variable can fully represent the influence of dissolved material on the thermodynamic properties of seawater. We consider three distinct representations of salinity that have been used in previous studies and discuss the connections and distinctions between them. One of these variables provides the most accurate representation of density possible as well as improvements over Reference Salinity for the determination of other thermodynamic properties. It is referred to as "Density Salinity" and is represented by the symbol SAdens; it stands out as the most appropriate representation of salinity for use in dynamical physical

  1. Absolute Salinity, "Density Salinity" and the Reference-Composition Salinity Scale: present and future use in the seawater standard TEOS-10

    Science.gov (United States)

    Wright, D. G.; Pawlowicz, R.; McDougall, T. J.; Feistel, R.; Marion, G. M.

    2010-08-01

    Salinity plays a key role in the determination of the thermodynamic properties of seawater and the new TEOS-101 standard provides a consistent and effective approach to dealing with relationships between salinity and these thermodynamic properties. However, there are a number of practical issues that arise in the application of TEOS-10, both in terms of accuracy and scope, including its use in the reduction of field data and in numerical models. First, in the TEOS-10 formulation for IAPSO Standard Seawater, the Gibbs function takes the Reference Salinity as its salinity argument, denoted SR, which provides a measure of the mass fraction of dissolved material in solution based on the Reference Composition approximation for Standard Seawater. We discuss uncertainties in both the Reference Composition and the Reference-Composition Salinity Scale on which Reference Salinity is reported. The Reference Composition provides a much-needed fixed benchmark but modified reference states will inevitably be required to improve the representation of Standard Seawater for some studies. The Reference-Composition Salinity Scale should remain unaltered to provide a stable representation of salinity for use with the TEOS-10 Gibbs function and in climate change detection studies. Second, when composition anomalies are present in seawater, no single salinity variable can fully represent the influence of dissolved material on the thermodynamic properties of seawater. We consider three distinct representations of salinity that have been used in previous studies and discuss the connections and distinctions between them. One of these variables provides the most accurate representation of density possible as well as improvements over Reference Salinity for the determination of other thermodynamic properties. It is referred to as "Density Salinity" and is represented by the symbol SAdens; it stands out as the most appropriate representation of salinity for use in dynamical physical

  2. Validation of a model to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD: the rotterdam ischemic heart disease and stroke computer simulation (RISC) model

    NARCIS (Netherlands)

    van Kempen, Bob J. H.; Ferket, Bart S.; Hofman, Albert; Steyerberg, Ewout W.; Colkesen, Ersen B.; Boekholdt, S. Matthijs; Wareham, Nicholas J.; Khaw, Kay-Tee; Hunink, M. G. Myriam

    2012-01-01

    Background: We developed a Monte Carlo Markov model designed to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD. Internal, predictive, and external validity of the model have not yet been established. Methods: The Rotterdam Ischemic Heart Disease

  3. Validation of a model to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD: The rotterdam ischemic heart disease and stroke computer simulation (RISC) model

    NARCIS (Netherlands)

    B.J.H. van Kempen (Bob); B.S. Ferket (Bart); A. Hofman (Albert); E.W. Steyerberg (Ewout); E.B. Colkesen (Ersen); S.M. Boekholdt (Matthijs); N.J. Wareham (Nick); K-T. Khaw (Kay-Tee); M.G.M. Hunink (Myriam)

    2012-01-01

    textabstractBackground: We developed a Monte Carlo Markov model designed to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD. Internal, predictive, and external validity of the model have not yet been established.Methods: The Rotterdam Ischemic

  4. Ethyl group as matrix modifier and inducer of ordered domains in hybrid xerogels synthesised in acidic media using ethyltriethoxysilane (ETEOS) and tetraethoxysilane (TEOS) as precursors

    International Nuclear Information System (INIS)

    Rios, Xabier; Moriones, Paula; Echeverría, Jesús C.; Luquin, Asunción; Laguna, Mariano; Garrido, Julián J.

    2013-01-01

    Hybrid silica xerogels favourably combine the properties of organic and inorganic components in one material; consequently these materials are useful for multiple applications. The versatility and mild synthetic conditions provided by the sol-gel process are ideal for the synthesis of hybrid materials. The specific aims of this study were to synthesise hybrid xerogels in acidic media using tetraethoxysilane (TEOS) and ethyltriethoxysilane (ETEOS) as silica precursors, and to assess the role of the ethyl group as a matrix modifier and inducer of ordered domains in xerogels. All xerogels were synthesised at pH 4.5, at 60 °C, with 1:4.75:5.5 TEOS:EtOH:H 2 O molar ratio. Gelation time exponentially increased with the ETEOS molar ratio. Incorporation of the ethyl groups into the structure of xerogels reduced cross-linking, increased the average siloxane bond length, and promoted the formation of ordered domains. As a result, a transition from Q n to T n signals detected in the 29 Si NMR spectra, the Si–O structural band in the FTIR spectra shifted to lower wavelength, and a new peak in the XRD pattern at 2θ < 10° appeared in the XRD patterns. Mass spectroscopy detected fragments with high numbers of silicon atoms and a polymeric distribution. - Graphical abstract: Display Omitted - Highlights: • Hybrid xerogels were synthesised for ETEOS/TEOS mixtures up to 80% ETEOS. • The gelification time exponentially increased with ETEOS content. • FTIR, XRD and MAS NMR demonstrated the presence of ethyl groups into xerogels. • For ETEOS contents ≤30%, ethyl group acted as matrix modifier. • For ETEOS contents ≥30%, ethyl groups induced the formation of ordered domains

  5. A Study on Anti – Fouling Behaviour and Mechanical Properties of PVA/Chitosan/TEOS Hybrid membrane in The Treatment of Copper Solution

    Science.gov (United States)

    Sulaiman, N. A.; Kassim Shaari, N. Z.; Rahman, N. Abdul

    2018-05-01

    In a wastewater treatment by using membrane filtration, fouling has been one of the major problems. In this study, the anti-fouling behaviour of the fabricated thin-film composite membrane were studied during the treatment of water containing copper ion. The membranes were prepared from a polymer blend of 2wt.% chitosan with 10 wt.% poly(vinyl alcohol) (PVA) and then it was cross – linked with tetraethylorthosilicate (TEOS) through sol-gel method. The membrane had been evaluated for its resistance against organic fouling where humic acid had been chosen as organic foulant model which represent the natural organic matter (NOM) in water or wastewater. The dead-end filtration experiments were carried out by using 50 ppm of copper solution with and without the presence of humic acid as feed solution, which was passed through two types of thin film composite membranes. The possible reversible fouling was evaluated by using relative flux decay (RFD) and relative flux recovery (RFR) calculations. The percentage of copper ion removal was evaluated by using Atomic Absorption Spectroscopy (AAS). Based on the results, with the presence of humic acid, the membrane incorporated with silica precursor (TEOS) showed lower flux decay (3%) and higher flux recovery (76%), which show that the formulated hybrid membrane possesses the anti fouling property. The same trend was observed in the mechanical properties of hybrid membrane, where the presence of TEOS has improved the tensile strength and flexibility of the membrane. Therefore, the fabricated thin film composite with the anti-fouling properties and good physical flexibility has potential to be used in the treatment of wastewater containing heavy metal as it could result in good saving in term of operational cost.

  6. Heat Treatment Effect on Eu3+ Doped TeO2-BaO-Bi2O3 Glass Systems with Ag Nanoparticles

    Directory of Open Access Journals (Sweden)

    Tomasz Lewandowski

    2017-01-01

    Full Text Available Glass systems of 73TeO2-4BaO-3Bi2O3-2Eu2O3-xAg (in molar ratio where x = 0, 1, 2, and 3 compositions have been successfully synthesized. Silver nanoparticles were obtained with the employment of heat treatment (HT procedure executed at 350°C. Glass transition temperatures of different compositions have been determined through DSC measurements. XRD results presented characteristic amorphous halo indicating lack of long range order in the samples. FTIR structural studies revealed that glass matrix is mainly composed of TeO3 and TeO4 species and is stable after different applied heat treatment times. X-ray photoelectron spectroscopy (XPS measurements confirmed that in selected samples part of Ag ions changed oxidation state to form Ag0 species. TEM measurements revealed nanoparticles of size in the range of 20–40 nm. UV-vis absorption results demonstrated characteristic transitions of Eu3+ ions. Additionally, UV-vis spectra of samples heat-treated for 6, 12, 24, and 48 hours presented bands related to silver nanoparticles. Photoluminescence (PL studies have been performed with excitation wavelength of λexc=395 nm. Obtained spectra exhibited peaks due to 5D0-7FJ (where J=2,3,4 and 5D1-7FJ (where J=1,2,3 transitions of Eu3+. Moreover, luminescence measurement indicated enhancement of rare earth ions emissions in several of the annealed samples. Increase of emission intensity of about 35% has been observed.

  7. Influence of composition and preparation conditions on some physical properties of TeO2–Sb2O3–PbCl2 glasses

    Czech Academy of Sciences Publication Activity Database

    Bošák, O.; Kostka, Petr; Minárik, S.; Trnovcová, V.; Podolinčiaková, J.; Zavadil, Jiří

    2013-01-01

    Roč. 377, spec. is. (2013), s. 74-78 ISSN 0022-3093. [International Symposium on Non-Oxide and New Optical Glasses /18./ - ISNOG 2012. Saint-Malo, 01.07.2012-05.07.2012] R&D Projects: GA ČR GAP106/12/2384; GA MŠk 7AMB12SK147 Institutional support: RVO:67985891 ; RVO:67985882 Keywords : heavy metal oxychloride glasses * TeO2 * electrical conductivity * static permittivity Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass; JA - Electronics ; Optoelectronics, Electrical Engineering (URE-Y) Impact factor: 1.716, year: 2013

  8. Resolved discrepancies between visible spontaneous Raman cross-section and direct near-infrared Raman gain measurements in TeO2-based glasses.

    Science.gov (United States)

    Rivero, Clara; Stegeman, Robert; Couzi, Michel; Talaga, David; Cardinal, Thierry; Richardson, Kathleen; Stegeman, George

    2005-06-13

    Disagreements on the Raman gain response of different tellurite-based glasses, measured at different wavelengths, have been recently reported in the literature. In order to resolve this controversy, a multi-wavelength Raman cross-section experiment was conducted on two different TeO2-based glass samples. The estimated Raman gain response of the material shows good agreement with the directly-measured Raman gain data at 1064 nm, after correction for the dispersion and wavelength-dependence of the Raman gain process.

  9. Appraisal of the correspondence of the safety improvement measures proposed for the Mochovce NPP with respect to the ones outlined in the TEO for the Juragua NPP

    International Nuclear Information System (INIS)

    Pereira Hernandez, Guillermo

    1996-01-01

    The work accomplished consisted in determining the correspondence or relationship between the safety improvement measures of the outlined for both plants as well as a preliminary analysis from which were determined. The measures which a deeper analysis is recommended to evaluate theirs possible addition to the group it is recommended to deepen with a view to take into considerations aspects of interest that in them are outlined and which could serve to enhance the approach or the linkage of the measures outlined in the TEO

  10. Cs_7Sm_1_1[TeO_3]_1_2Cl_1_6 and Rb_7Nd_1_1[TeO_3]_1_2Br_1_6, the new tellurite halides of the tetragonal Rb_6LiNd_1_1[SeO_3]_1_2Cl_1_6 structure type

    International Nuclear Information System (INIS)

    Charkin, Dmitri O.; Black, Cameron; Downie, Lewis J.; Sklovsky, Dmitry E.; Berdonosov, Peter S.; Olenev, Andrei V.; Zhou, Wuzong; Lightfoot, Philip; Dolgikh, Valery A.

    2015-01-01

    Two new rare-earth – alkali – tellurium oxide halides were synthesized by a salt flux technique and characterized by single-crystal X-ray diffraction. The structures of the new compounds Cs_7Sm_1_1[TeO_3]_1_2Cl_1_6 (I) and Rb_7Nd_1_1[TeO_3]_1_2Br_1_6 (II) (both tetragonal, space group I4/mcm) correspond to the sequence of [MLn_1_1(TeO_3)_1_2] and [M_6X_1_6] layers and bear very strong similarities to those of known selenite analogs. We discuss the trends in similarities and differences in compositions and structural details between the Se and Te compounds; more members of the family are predicted. - Graphical abstract: Two new rare-earth – alkali – tellurium oxide halides were predicted and synthesized. - Highlights: • Two new rare-earth – alkali – tellurium oxide halides were synthesized. • They adopt slab structure of rare earth-tellurium-oxygen and CsCl-like slabs. • The Br-based CsCl-like slabs have been observed first in this layered family.

  11. Thermodynamic and experimental studies of the CVD of A-15 superconductors. I

    International Nuclear Information System (INIS)

    Madar, R.; Weiss, F.; Fruchart, R.; Bernard, C.

    1978-01-01

    This paper deals with the experimental and thermodynamic study of the chemical vapor deposition (CVD) synthesis of Nb 3 Ga layers on various metallic and insulating substrates using the coreduction of mixed halides by hydrogen. Thermodynamic equilibrium in the seven-component system Nb-Ga-H-Cl-Si-O-Ar has been calculated using the method of minimization of the system Gibbs free energy as a function of the variables directly available in the CVD system. The chosen variables were the chloride ratio, the reduction and dilution parameters and the temperature of the deposition zone. The equilibrium compositions were calculated for the two composition limits of the A-15 phase: NbGasub(0.15) and Nb 3 Ga. They are presented in the form of CVD phase diagrams. A CVD reactor has been set up and more than one hundred measurements have been made in order to check the validity of the equilibrium calculations. The comparisons between equilibrium and experimental results show a good agreement and lead to a better understanding of the chemistry and thermodynamics of the system. (Auth.)

  12. Control of Reaction Surface in Low Temperature CVD to Enhance Nucleation and Conformal Coverage

    Science.gov (United States)

    Kumar, Navneet

    2009-01-01

    The Holy Grail in CVD community is to find precursors that can afford the following: good nucleation on a desired substrate and conformal deposition in high AR features. Good nucleation is not only necessary for getting ultra-thin films at low thicknesses; it also offers films that are smooth at higher thickness values. On the other hand,…

  13. CVD of SiC and AlN using cyclic organometallic precursors

    Science.gov (United States)

    Interrante, L. V.; Larkin, D. J.; Amato, C.

    1992-01-01

    The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

  14. CVD growth and characterization of 3C-SiC thin films

    Indian Academy of Sciences (India)

    Unknown

    Cubic silicon carbide (3C-SiC) thin films were grown on (100) and (111) Si substrates by CVD technique using ... of grown films were studied using optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and X-ray ... the oxide mask gets damaged (Edgar et al 1998). There- fore, lower ...

  15. The effect of percentage carbonon the CVD coating of plain carbon ...

    African Journals Online (AJOL)

    Two steels En 3 and En 39 were given a TiC-TiN CVD coating in the carburized and uncarburized conditions. The continuity of the coatings and their adherance to the substrate were examined. The thickness of the deposited coatings were also measured, their adherence to the substrate and their thickness was off ected by ...

  16. Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene

    Science.gov (United States)

    Shautsova, Viktoryia; Gilbertson, Adam M.; Black, Nicola C. G.; Maier, Stefan A.; Cohen, Lesley F.

    2016-07-01

    We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers possess lower doping concentration, and improved carrier mobilities compared to graphene films produced by conventional transfer methods onto untreated SiO2/Si, SAM-modified and hBN covered SiO2/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping.

  17. The integration of epigenetics and genetics in nutrition research for CVD risk factors

    Science.gov (United States)

    There is increasing evidence documenting gene-by-environment (G x E) interactions for CVD related traits. However, the underlying mechanisms are still unclear. DNA methylation may represent one of such potential mechanisms. The objective of this review paper is to summarise the current evidence supp...

  18. CVD of solid oxides in porous substrates for ceramic membrane modification

    NARCIS (Netherlands)

    Lin, Y.S.; Lin, Y.S.; Burggraaf, Anthonie; Burggraaf, A.J.

    1992-01-01

    The deposition of yttria-doped zirconia has been experimented systematically in various types of porous ceramic substrates by a modified chemical vapor deposition (CVD) process operating in an opposing reactant geometry using water vapor and corresponding metal chloride vapors as reactants. The

  19. Large-area selective CVD epitaxial growth of Ge on Si substrates

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.; Nanver, L.K.

    2011-01-01

    Selective epitaxial growth of crystalline Ge on Si in a standard ASM Epsilon 2000 CVD reactor is investigated for the fabrication of Ge p+n diodes. At the deposition temperature of 700?C, most of the lattice mismatch-defects are trapped within first 300nm of Ge growth and good quality single crystal

  20. Merging Standard CVD Techniques for GaAs and Si Epitaxial Growth

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.; Van den Bogaard, A.; Nanver, L.K.

    2010-01-01

    A commercial Chemical Vapor Deposition (CVD) system, the ASMI Epsilon 2000 designed for Si and SiGe epitaxy, has, for the first time, been equipped for the growth of GaAs compounds in a manner that does not exclude the use of the system also for Si-based depositions. With the new system, intrinsic,

  1. Ge-on-Si : Single-Crystal Selective Epitaxial Growth in a CVD Reactor

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.B.; Nanver, L.K.

    2012-01-01

    A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the

  2. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

    NARCIS (Netherlands)

    Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2013-01-01

    A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

  3. An economic CVD technique for pure SnO 2 thin films deposition

    Indian Academy of Sciences (India)

    A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has ...

  4. A beam radiation monitor based on CVD diamonds for SuperB

    Science.gov (United States)

    Cardarelli, R.; Di Ciaccio, A.

    2013-08-01

    Chemical Vapor Deposition (CVD) diamond particle detectors are in use in the CERN experiments at LHC and at particle accelerator laboratories in Europe, USA and Japan mainly as beam monitors. Nowadays it is considered a proven technology with a very fast signal read-out and a very high radiation tolerance suitable for measurements in high radiation environment zones i.e. near the accelerators beam pipes. The specific properties of CVD diamonds make them a prime candidate for measuring single particles as well as high-intensity particle cascades, for timing measurements on the sub-nanosecond scale and for beam protection systems in hostile environments. A single-crystalline CVD (scCVD) diamond sensor, read out with a new generation of fast and high transition frequency SiGe bipolar transistor amplifiers, has been tested for an application as radiation monitor to safeguard the silicon vertex tracker in the SuperB detector from excessive radiation damage, cumulative dose and instantaneous dose rates. Test results with 5.5 MeV alpha particles from a 241Am radioactive source and from electrons from a 90Sr radioactive source are presented in this paper.

  5. Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Kalish, R.; Uzan-Saguy, C.; Baskin, E.; Nesládek, M.; Koizumi, S.

    2003-01-01

    Roč. 199, č. 1 (2003), s. 82-86 ISSN 0031-8965 EU Projects: European Commission(XE) HPRN-CT-1999-00139 Institutional research plan: CEZ:AV0Z1010914 Keywords : photo-Hall measurements * CVD diamonnd * phosphorus doped Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.950, year: 2003

  6. An economic CVD technique for pure SnO2 thin films deposition ...

    Indian Academy of Sciences (India)

    An economic CVD technique for pure SnO2 thin films deposition: Temperature effects ..... C are depicted in figure 7. It is observed that the cut-off wave- ... cating that the energy gap of the SnO2 films varies among. 3·54, 3·35 and 1·8 eV.

  7. Thermoluminescence properties of undoped diamond films deposited using HF CVD technique

    Directory of Open Access Journals (Sweden)

    Paprocki K.

    2018-03-01

    Full Text Available Natural diamond has been considered as a perspective material for clinical radiation dosimetry due to its tissuebiocompatibility and chemical inertness. However, the use of natural diamond in radiation dosimetry has been halted by the high market price. The recent progress in the development of CVD techniques for diamond synthesis, offering the capability of growing high quality diamond layers, has renewed the interest in using this material in radiation dosimeters having small geometricalsizes. Polycrystalline CVD diamond films have been proposed as detectors and dosimeters of β and α radiation with prospective applications in high-energy photon dosimetry. In this work, we present a study on the TL properties of undoped diamond film samples grown by the hot filament CVD (HF CVD method and exposed to β and α radiation. The glow curves for both types of radiation show similar character and can be decomposed into three components. The dominant TL peaks are centered at around 610 K and exhibit activation energy of the order of 0.90 eV.

  8. Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

    Czech Academy of Sciences Publication Activity Database

    Nesládek, M.; Mareš, Jiří J.; Tromson, D.; Mer, Ch.; Bergonzo, P.; Hubík, Pavel; Krištofik, Jozef

    2006-01-01

    Roč. 7, Suppl. 1 (2006), S41-S44 ISSN 1468-6996 R&D Projects: GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : superconductivity * electrical transport * doping * CVD diamond Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.124, year: 2006

  9. Thermoluminescence properties of undoped and nitrogen-doped CVD diamond exposed to gamma radiation

    International Nuclear Information System (INIS)

    Barboza-Flores, M.; Gastelum, S.; Cruz-Zaragoza, E.; Melendrez, R.; Chernov, V.; Pedroza-Montero, M.; Favalli, A.

    2008-01-01

    It is known that the thermoluminescence (TL) performance of CVD diamond depends on the impurity concentration and doping materials introduced during growing. We report on the TL properties of undoped and 750 ppm nitrogen-doped CVD diamond grown on (0 0 1) silicon substrate. The samples were exposed to gamma radiation from a Gammacell 200 Nordion irradiator in the 10-500 Gy dose range at 627 mGy/min dose rate. The nitrogen-doped CVD diamond sample exhibited a TL glow curve peaked around 537 K and a small shoulder about 411 K and a linear dose behavior in the 10-60 Gy dose range. In contrast, the undoped specimen showed a 591 K peaked TL glow curve and linear dose response for 10-100 Gy doses. However, both samples displayed a non-linear dose response for doses higher than 100 Gy. The doping effects seem to cause a higher TL efficiency, which may be attributed to the differences in the diamond bonding and amorphous carbon on the CVD samples as well as to the presence of nitrogen. In addition, the nitrogen content may produce some structural and morphological surface effects, which may account for the distinctive TL features and dose response of the diamond samples

  10. Red blood cell rheology in patients with chronic venous disease (CVD)

    NARCIS (Netherlands)

    Chwała, Maciej; Spannbauer, Anna; Teległów, Aneta; Cencora, Andrzej; Marchewka, Anna; Hardeman, Max R.; Dabrowski, Zbigniew

    2009-01-01

    Rheological studies concerning aggregation and elongation of erythrocytes were carried out in 21 patients (mean age 56 years) with chronic venous disease (CVD) and 10 (mean age 45 years) healthy control subjects, with the use of a LORCA device. Higher values of parameters characterizing both

  11. Optimization of CVD parameters for long ZnO NWs grown on ITO

    Indian Academy of Sciences (India)

    The optimization of chemical vapour deposition (CVD) parameters for long and vertically aligned (VA) ZnO nanowires (NWs) were investigated. Typical ZnO NWs as a single crystal grown on indium tin oxide (ITO)-coated glass substrate were successfully synthesized. First, the conducted side of ITO–glass substrate was ...

  12. Computation of flow and thermal fields in a model CVD reactor

    Indian Academy of Sciences (India)

    Mixing of coaxial jets within a tube in the presence of blockage has been numerically studied. This configuration is encountered during the modelling of flow and heat transfer in CVD (chemical vapour deposition) reactors. For the conditions prevailing in the reactor, the Reynolds numbers are low and flow can be taken to be ...

  13. The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond

    NARCIS (Netherlands)

    Deferme, W.; Tanasa, G.; Amir, J.; Haenen, K.; Nesladek, M.; Flipse, C.F.J.

    2006-01-01

    In this work, scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) were applied to investigate the surface morphol. and the surface electronic structure of plasma-treated (100)-oriented CVD diamond films. These films were hydrogenated using a conventional MWPE-CVD

  14. Cold-walled UHV/CVD batch reactor for the growth of Si1_x/Gex layers

    DEFF Research Database (Denmark)

    Thomsen, Erik Vilain; Christensen, Carsten; Andersen, C.R.

    1997-01-01

    A novel cold-walled, lamp-heated, ultrahigh vacuum chemical vapor deposition (UHV/CVD) batch system for the growth of SiGe layers is presented. This system combines the batch capability of the standard UHV/CVD furnace with the temperature processing available in rapid thermal processing (Rm...

  15. Correlates of CVD and discussing sexual issues with physicians among male military veterans.

    Science.gov (United States)

    Smith, Matthew Lee; Goltz, Heather Honoré; Motlagh, Audry S; Ahn, SangNam; Bergeron, Caroline D; Ory, Marcia G

    2016-10-01

    This study aims to identify socio-demographic and health behavior factors associated with cardiovascular disease (CVD) diagnosis and patient-physician communication concerning sexual issues among older Veterans. Cross-sectional data were collected from 635 male Veterans over age 55 years as part of the 2010 National Social Life, Health and Aging Project, a nationally-representative, population-based study of community-dwelling older Americans. Two independent logistic regression analyses were performed. Over 33% of Veterans were aged 75 years or older. Over one-half of participants reported having a CVD diagnosis (58%) and sexual intercourse within the previous year (58%); over one-third (37%) reported having one or more sexual dysfunctions and discussing sexual issues with their physician (42%). Veterans diagnosed with CVD were significantly more likely to self-identify as racial/ethnic minorities (OR=1.89, P=0.021), have more chronic disease comorbidities (OR=1.23, P=0.041), and have more sexual dysfunctions (OR=1.19, P=0.028). Veterans diagnosed with CVD were significantly less likely to report having sex within the previous year (OR=0.53, P=0.005). Veterans who reported discussing sexual issues with a physician were significantly more likely to be ≥75 years (OR=1.79, P=0.010), and report more than a high school education (OR=1.62, P=0.016), CVD diagnosis (OR=1.59, P=0.015), sex within the previous year (OR=1.69, P=0.033), and trouble achieving/maintaining an erection (OR=3.39, Paging and sexual health/counseling services. These services should promote increased patient-physician communication as well as referrals between physicians and sex health/counseling specialists. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  16. Superhydrophobic Copper Surfaces with Anticorrosion Properties Fabricated by Solventless CVD Methods.

    Science.gov (United States)

    Vilaró, Ignasi; Yagüe, Jose L; Borrós, Salvador

    2017-01-11

    Due to continuous miniaturization and increasing number of electrical components in electronics, copper interconnections have become critical for the design of 3D integrated circuits. However, corrosion attack on the copper metal can affect the electronic performance of the material. Superhydrophobic coatings are a commonly used strategy to prevent this undesired effect. In this work, a solventless two-steps process was developed to fabricate superhydrophobic copper surfaces using chemical vapor deposition (CVD) methods. The superhydrophobic state was achieved through the design of a hierarchical structure, combining micro-/nanoscale domains. In the first step, O 2 - and Ar-plasma etchings were performed on the copper substrate to generate microroughness. Afterward, a conformal copolymer, 1H,1H,2H,2H-perfluorodecyl acrylate-ethylene glycol diacrylate [p(PFDA-co-EGDA)], was deposited on top of the metal via initiated CVD (iCVD) to lower the surface energy of the surface. The copolymer topography exhibited a very characteristic and unique nanoworm-like structure. The combination of the nanofeatures of the polymer with the microroughness of the copper led to achievement of the superhydrophobic state. AFM, SEM, and XPS were used to characterize the evolution in topography and chemical composition during the CVD processes. The modified copper showed water contact angles as high as 163° and hysteresis as low as 1°. The coating withstood exposure to aggressive media for extended periods of time. Tafel analysis was used to compare the corrosion rates between bare and modified copper. Results indicated that iCVD-coated copper corrodes 3 orders of magnitude slower than untreated copper. The surface modification process yielded repeatable and robust superhydrophobic coatings with remarkable anticorrosion properties.

  17. Effects of Tetraethyl Orthosilicate (TEOS on the Light and Temperature Stability of a Pigment from Beta vulgaris and Its Potential Food Industry Applications

    Directory of Open Access Journals (Sweden)

    Gustavo A. Molina

    2014-11-01

    Full Text Available A novel, simple and inexpensive modification method using TEOS to increase the UV light, pH and temperature stability of a red-beet-pigment extracted from Beta vulgaris has been proposed. The effects on the molecular structure of betalains were studied by FTIR spectroscopy. The presence of betacyanin was verified by UV-Vis spectroscopy and its degradation in modified red-beet-pigment was evaluated and compared to the unmodified red-beet-pigment; performance improvements of 88.33%, 16.84% and 20.90% for UV light, pH and temperature stability were obtained, respectively,. Measurements of reducing sugars, phenol, and antioxidant contents were performed on unmodified and modified red-beet-pigment and losses of close to 21%, 54% and 36%, respectively, were found to be caused by the addition of TEOS. Polar diagrams of color by unmodified and modified red-beet-pigment in models of a beverage and of a yogurt were obtained and the color is preserved, although here is a small loss in the chromaticity parameter of the modified red-beet-pigment.

  18. Synthesis, structural, thermal and optical properties of TeO2-Bi2O3-GeO2-Li2O glasses

    Science.gov (United States)

    Dimowa, Louiza; Piroeva, Iskra; Atanasova-Vladimirova, S.; Petrova, Nadia; Ganev, Valentin; Titorenkova, Rositsa; Yankov, Georgi; Petrov, Todor; Shivachev, Boris L.

    2016-10-01

    In this study, synthesis and characterization of novel quaternary tellurite glass system TeO2-Bi2O3-GeO2-Li2O is presented. The compositions include TeO2 and GeO2 as glass formers while different proportion of Bi2O3 and Li2O act as network modifiers. Differential thermal analysis, X-ray diffraction, scanning electron microscopy energy dispersive X-ray spectroscopy, laser ablation inductively coupled plasma mass spectrometry, UV-Vis and Raman spectroscopy are applied to study the structural, thermal and optical properties of the studied glasses. Obtained glasses possess a relatively low glass transition temperature (around 300 °C) if compared to other tellurite glasses, show good thermal transparency in the visible and near infra-red (from 2.4 to 0.4 μm) and can double the frequency of laser light from its original wavelength of 1064 nm to its second-harmonic at 532 nm (i.e. second harmonic generation).

  19. Two-Phase Diffusion Technique for the Preparation of Ultramacroporous/Mesoporous Silica Microspheres via Interface Hydrolysis, Diffusion, and Gelation of TEOS.

    Science.gov (United States)

    Ju, Minhua; Li, Yupeng; Yu, Liang; Wang, Chongqing; Zhang, Lixiong

    2018-02-06

    Honeycombed hierarchical ultramacroporous/mesoporous silica microspheres were prepared via the hydrolysis of TEOS in the oil-water interface, with subsequent diffusion and gelation in the acidic water-phase microdroplets with the assistance of a simple homemade microdevice. The diffusion of furfuryl alcohol (FA) also happened at a relatively high rate during the hydrolysis and diffusion of TEOS. Therefore, plenty of FA will be inside of the water microdroplets and form a decent number of polyfurfuryl alcohol (PFA) microparticles, thereby obtaining honeycombed hierarchical porosity silica microspheres with abundant ultramacroporous cavities and mesopores after calcination. It was found that the concentration of FA, residence time, and reaction temperature have significant effects on the porosity and pore size due to the influence on the diffusion rate and amount of FA in water-phase microdroplets. The honeycombed silica microspheres have obvious microscopic visible ultramacroporous cavities with the submicrometer cavity diameter as high as 85% porosity based on the rough overall volume of microsphere. N 2 adsorption-desorption isotherms show that the honeycombed hierarchical porosity silica microspheres have a high surface area of 602 m 2 g -1 , a mesopore volume of 0.77 cm 3 /g, and a mesopore porosity of 99.6% based on the total pore volume of N 2 adsorption-desorption. On the basis of the experiment results, a rational formation process of the honeycombed hierarchical porosity silica microspheres was deduced.

  20. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation