WorldWideScience

Sample records for temperature semiconductor x

  1. Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications

    Science.gov (United States)

    Nie, Tianxiao; Tang, Jianshi; Wang, Kang L.

    2015-09-01

    In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1-x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.

  2. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  3. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  4. Influence of temperature on thermoelectric properties of Fe{sub x}Co{sub 1−x}S{sub 2} thin films: A semiconductor to semimetal conversion

    Energy Technology Data Exchange (ETDEWEB)

    Clamagirand, J.M.; Ares, J.R., E-mail: joser.ares@uam.es; Flores, E.; Diaz-Chao, P.; Leardini, F.; Ferrer, I.J.; Sánchez, C.

    2016-02-01

    In this work, we investigate the thermoelectric properties of p and n-type thin films obtained by cobalt doping of FeS{sub 2}. Films were synthesized by direct sulfuration of Co–Fe thin bilayers at 300 °C. It is found that at room temperature (RT), the Seebeck coefficient is reduced from 80 μV/K to − 70 μV/K when Co concentration is increased and the electrical resistivity of the films is decreased two orders of magnitude. X-ray diffraction and Raman measurements point out that Co is replacing Fe into the pyrite lattice and, subsequently is promoting a semiconductor to semimetal conversion. The influence of temperature on transport properties of different Fe{sub x}Co{sub 1−x}S{sub 2} films has been investigated. Whereas the Seebeck coefficient is hardly modified, the film resistivity is drastically decreased when temperature increases what has been attributed to the thermal activation of electrical carriers. The influence of Co doping on the band scheme of FeS{sub 2} is shown. To this aim, donor and acceptor states are included into its forbidden gap. Whereas the band scheme of FeS{sub 2} exhibits an acceptor level with an E = 0.11 ± 0.03 eV above the top of the valence band due to iron vacancies, a wide donor level close to the bottom of the conduction band (E = 0.08 ± 0.05 eV) is created by the progressive replacement of iron by cobalt into the FeS{sub 2} lattice. - Highlights: • Thermoelectric properties of pyrite and Co-doped pyrite thin films were measured. • Whereas ρ decreases, S remains practically unaltered on increasing temperature (RT-300 °C). • On increasing Co-concentration, films exhibit a p semiconductor to n type semimetal conversion. • Donor states close to the botton of the conduction band are created by Co doping. • Energy of the donor level decreases and gets wider due to Co-concentration.

  5. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  6. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  7. A proposal for both plasma ion- and electron-temperature diagnostics under simultaneous incidence of particles and x-rays into a semiconductor on the basis of a proposed model for a semiconductor detector response

    International Nuclear Information System (INIS)

    Numakura, T; Cho, T; Kohagura, J; Hirata, M; Minami, R; Yoshida, M; Nakashima, Y; Tamano, T; Yatsu, K; Miyoshi, S

    2003-01-01

    A method is proposed for obtaining radial profiles of plasma temperatures of both plasma ion (T i ) and electron (T e ) simultaneously by the use of a semiconductor detector array. The method is based on our developed particle-response model for a semiconductor detector; in particular, the response theory is constructed for giving the applicability in particle energies ranging down to a kiloelectronvolt. Calculated results from our model are in fairly good agreement with experimental data on the detector response of incident particle beams with energies in the range 100 eV to a few kiloelectronvolts. On the basis of the verification of the proposed model, an idea of the use of a developed semiconductor detector array covered with 'reliably unbreakable' ultrathin SiO 2 'dead-layer filters' having various nanometre-order thicknesses is applied for simultaneous T i and T e analyses by using charge-exchange neutral particles and x-rays from plasmas. Radial profiles of T i and T e are obtained in a single plasma discharge alone, and the data reliability is independently cross-checked by a radial scan of a conventional charge-exchange neutral-particle analyser system as well as a 50-channel microchannel plate x-ray diagnostics system in the GAMMA 10 tandem mirror

  8. X-ray absorption spectroscopy of semiconductors

    CERN Document Server

    Ridgway, Mark

    2015-01-01

    X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

  9. Room-temperature ductile inorganic semiconductor

    Science.gov (United States)

    Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

    2018-05-01

    Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

  10. Temperature dependent electronic conduction in semiconductors

    International Nuclear Information System (INIS)

    Roberts, G.G.; Munn, R.W.

    1980-01-01

    This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

  11. HIgh Temperature Photocatalysis over Semiconductors

    Science.gov (United States)

    Westrich, Thomas A.

    Due in large part to in prevalence of solar energy, increasing demand of energy production (from all sources), and the uncertain future of petroleum energy feedstocks, solar energy harvesting and other photochemical systems will play a major role in the developing energy market. This dissertation focuses on a novel photochemical reaction process: high temperature photocatalysis (i.e., photocatalysis conducted above ambient temperatures, T ≥ 100°C). The overarching hypothesis of this process is that photo-generated charge carriers are able to constructively participate in thermo-catalytic chemical reactions, thereby increasing catalytic rates at one temperature, or maintaining catalytic rates at lower temperatures. The photocatalytic oxidation of carbon deposits in an operational hydrocarbon reformer is one envisioned application of high temperature photocatalysis. Carbon build-up during hydrocarbon reforming results in catalyst deactivation, in the worst cases, this was shown to happen in a period of minutes with a liquid hydrocarbon. In the presence of steam, oxygen, and above-ambient temperatures, carbonaceous deposits were photocatalytically oxidized over very long periods (t ≥ 24 hours). This initial experiment exemplified the necessity of a fundamental assessment of high temperature photocatalytic activity. Fundamental understanding of the mechanisms that affect photocatalytic activity as a function of temperatures was achieved using an ethylene photocatalytic oxidation probe reaction. Maximum ethylene photocatalytic oxidation rates were observed between 100 °C and 200 °C; the maximum photocatalytic rates were approximately a factor of 2 larger than photocatalytic rates at ambient temperatures. The loss of photocatalytic activity at temperatures above 200 °C is due to a non-radiative multi-phonon recombination mechanism. Further, it was shown that the fundamental rate of recombination (as a function of temperature) can be effectively modeled as a

  12. A Designed Room Temperature Multilayered Magnetic Semiconductor

    Science.gov (United States)

    Bouma, Dinah Simone; Charilaou, Michalis; Bordel, Catherine; Duchin, Ryan; Barriga, Alexander; Farmer, Adam; Hellman, Frances; Materials Science Division, Lawrence Berkeley National Lab Team

    2015-03-01

    A room temperature magnetic semiconductor has been designed and fabricated by using an epitaxial antiferromagnet (NiO) grown in the (111) orientation, which gives surface uncompensated magnetism for an odd number of planes, layered with the lightly doped semiconductor Al-doped ZnO (AZO). Magnetization and Hall effect measurements of multilayers of NiO and AZO are presented for varying thickness of each. The magnetic properties vary as a function of the number of Ni planes in each NiO layer; an odd number of Ni planes yields on each NiO layer an uncompensated moment which is RKKY-coupled to the moments on adjacent NiO layers via the carriers in the AZO. This RKKY coupling oscillates with the AZO layer thickness, and it disappears entirely in samples where the AZO is replaced with undoped ZnO. The anomalous Hall effect data indicate that the carriers in the AZO are spin-polarized according to the direction of the applied field at both low temperature and room temperature. NiO/AZO multilayers are therefore a promising candidate for spintronic applications demanding a room-temperature semiconductor.

  13. Nonlinear optical diagnostic of semimagnetic semiconductors Pb1-xYb xX (X = S, Se, Te)

    International Nuclear Information System (INIS)

    Nouneh, K.; Kityk, I.V.; Viennois, R.; Benet, S.; Charar, S.; Plucinski, K.J.

    2007-01-01

    Nonlinear optical measurements were performed to elucidate the influence of magnetic ions on the behavior of charge carriers in magnetic semiconductors-Pb 1-x Yb x X (X = S, Se, Te at x = 1-3%). It was shown that nonlinear optical methods could be used as sensitive tools for investigations of electron-phonon anharmonicity near low-temperature semiconductor-insulator phase transitions. There exists a difference between surface and bulk-like contributions to the nonlinear optical effects. It was shown that only low-temperature Two Photon Absorption (TPA) oscillator may be related to the number of the electron-phonon anharmonic modes responsible for the observed phase transformation. The explanation of the anomalous temperature dependences is given in accordance with dipole momentum's behaviors determined by low-temperature spin-spin interactions and by electron-phonon anharmonic interactions. We have discovered that low-temperature dependence of specific heat of Pb 1-x R x Te (R = Yb, Pr with x = 3% and 1.6%, respectively) exhibits a non-magnetic order caused by large electron-phonon contributions and structural disorder effects

  14. Faraday effect in Hg1-xMnxTe semimagnetic semiconductors

    International Nuclear Information System (INIS)

    Savchuk, A.I.; Frasunyak, V.M.; Fediv, V.I.

    1995-01-01

    Results on studies of spectral and temperature dependencies of the Faraday rotation in the Hg 1-x Mn x Te semiconductors are presented. It is shown that the Faraday rotation spectral dependence in the Hg 1-x Mn x Te crystals corresponds to model of the Faraday giant effect in other A 1-x 2 Mn x B 6 semimagnetic semiconductors, caused by strong exchange interaction between Mn d-electrons and s,p - zone carriers. The phase transition into the glass spin state is observed in the Hg 1-x Mn x Te crystals with Mn high content. 5 refs.; 2 figs

  15. Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode

    Science.gov (United States)

    Menon, Madhu; Sheetz, Michael; Sunkara, Mahendra Kumar; Pendyala, Chandrashekhar; Sunkara, Swathi; Jasinski, Jacek B.

    2017-09-05

    The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.

  16. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    International Nuclear Information System (INIS)

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-01-01

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  17. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  18. Metal-semiconductor interface in extreme temperature conditions

    International Nuclear Information System (INIS)

    Bulat, L.P.; Erofeeva, I.A.; Vorobiev, Yu.V.; Gonzalez-Hernandez, J.

    2008-01-01

    We present an investigation of electrons' and phonons' temperatures in the volume of a semiconductor (or metal) sample and at the interface between metal and semiconductor. Two types of mismatch between electrons' and phonons' temperatures take place: at metal-semiconductor interfaces and in the volume of the sample. The temperature mismatch leads to nonlinear terms in expressions for heat and electricity transport. The nonlinear effects should be taken into consideration in the study of electrical and heat transport in composites and in electronic chips

  19. Temperature control of power semiconductor devices in traction applications

    Science.gov (United States)

    Pugachev, A. A.; Strekalov, N. N.

    2017-02-01

    The peculiarity of thermal management of traction frequency converters of a railway rolling stock is highlighted. The topology and the operation principle of the automatic temperature control system of power semiconductor modules of the traction frequency converter are designed and discussed. The features of semiconductors as an object of temperature control are considered; the equivalent circuit of thermal processes in the semiconductors is suggested, the power losses in the two-level voltage source inverters are evaluated and analyzed. The dynamic properties and characteristics of the cooling fan induction motor electric drive with the scalar control are presented. The results of simulation in Matlab are shown for the steady state of thermal processes.

  20. Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

    International Nuclear Information System (INIS)

    Yalishev, V.Sh.

    2006-02-01

    Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

  1. Neutron scattering studies of a dilute magnetic semiconductor: Cd1-xMnxTe

    DEFF Research Database (Denmark)

    Steigenberger, Ursula; Lebech, Bente; Galazka, Robert R.

    1986-01-01

    The development of the magnetic ordering in the magnetic semiconductor Cd1-xMnxTe was investigated by elastic neutron scattering. A detailed study of the correlation length and the intensity as a function of temperature, direction in reciprocal space and concentration of the magnetic ions has been...

  2. Application of energy dispersive X-ray spectrometers with semiconductor detectors in radiometric analyses

    International Nuclear Information System (INIS)

    Jugelt, P.; Schieckel, M.

    1983-01-01

    Problems and possibilities of applying semiconductor detector spectrometers in radiometric analyses are described. A summary of the state of the art and tendencies of device engineering and spectra evaluation is given. Liquid-nitrogen cooled Li-drifted Si-detectors and high-purity Ge-detectors are compared. Semiconductor detectors working at room temperature are under development. In this connection CdTe and HgI 2 semiconductor detectors are compared. The use of small efficient computers in the spectrometer systems stimulates the development of algorithms for spectra analyses and for determining the concentration. Fields of application of energy dispersive X-ray spectrometers are X-ray diffraction and X-ray macroanalysis in investigating the structure of extensive surface regions

  3. Semiconductors for room temperature nuclear detector applications

    CERN Document Server

    James, Ralph B

    1995-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The""Willardson and Beer""Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series.

  4. High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

    Science.gov (United States)

    Elmes, John

    2015-01-01

    Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

  5. Conduit for high temperature transfer of molten semiconductor crystalline material

    Science.gov (United States)

    Fiegl, George (Inventor); Torbet, Walter (Inventor)

    1983-01-01

    A conduit for high temperature transfer of molten semiconductor crystalline material consists of a composite structure incorporating a quartz transfer tube as the innermost member, with an outer thermally insulating layer designed to serve the dual purposes of minimizing heat losses from the quartz tube and maintaining mechanical strength and rigidity of the conduit at the elevated temperatures encountered. The composite structure ensures that the molten semiconductor material only comes in contact with a material (quartz) with which it is compatible, while the outer layer structure reinforces the quartz tube, which becomes somewhat soft at molten semiconductor temperatures. To further aid in preventing cooling of the molten semiconductor, a distributed, electric resistance heater is in contact with the surface of the quartz tube over most of its length. The quartz tube has short end portions which extend through the surface of the semiconductor melt and which are lef bare of the thermal insulation. The heater is designed to provide an increased heat input per unit area in the region adjacent these end portions.

  6. Faraday effect in Cd1-xMnxTe semimagnetic semiconductor

    International Nuclear Information System (INIS)

    Vatamanyuk, P.P.; Savitskij, A.V.; Savchuk, A.I.; Ul'yanitskij, K.S.

    1988-01-01

    The Faraday effect is investigated in the semimagnetic semiconductor Cd 1-x Mn x Te (0≥x≤0.3) in the spectral range from 0.6 to 1.8 eV at temperatures between 4.2 and 350 K and in magnetic fields up to 250 kOe. Some peculiarities in the dispersion of the Faraday rotation (FR) are observed which are connected with a change in the direction of rotation depending on the composition and temperature. The results are analyzed by assuming the FR to consist of three components: an interband, exciton and intracentral contribution. The deviation of FR from saturation in strong magnetic fields is interpreted within the framework of antiferromagnetic exchange interaction between the Mn 2+ ions. On the basis of an analysis of the FR temperature dependence it is suggested that the spontaneous Faraday effect is characteristic of semimagnetic semiconductors in spin glass phase

  7. High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

    Science.gov (United States)

    Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

    2002-01-01

    It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

  8. Empirical temperature dependence of the refractive index of semiconductors

    NARCIS (Netherlands)

    Herve, P.J.L.; Vandamme, L.K.J.

    1995-01-01

    Values of the temperature coefficient of the refractive index were obtained from the derivation of a simple relation between energy band-gap and refractive index in semiconductors. These values, (dn/dT)/n, were compared to the experimental data found in literature. Our model, with only one fitting

  9. Temperature Dependent Models of Semiconductor Devices for ...

    African Journals Online (AJOL)

    The paper presents an investigation of the temperature dependent model of a diode and bipolar transistor built-in to the NAP-2 program and comparison of these models with experimentally measured characteristics of the BA 100 diode and BC 109 transistor. The detail of the modelling technique has been discussed and ...

  10. Electronic paramagnetic resonance in the Mn In X (X:Te,S) diluted magnetic semiconductor system

    International Nuclear Information System (INIS)

    Vincent, Bernardo; Betancourt, Luis; Sagredo, Vicente; Alcala, Rafael

    1996-01-01

    Semiconductor compounds wit the II-III-VI stoichiometry are very interesting materials since they present very good semiconducting characteristics and, along with strong magnetic properties, these II Mn In VI compounds have a great potential as opt and magneto-electronic devices. Among the possible magnetic properties of the materials is the presence of the spin-glass phase. Electron paramagnetic resonance is one of the techniques used to confirm this phase. The chosen crystals were chosen by chemical vapor transport. The absorption lines of these two families with 0.1 x 1 were all Lorentzian in shape and centred at g=2. A large broadening of the resonance line width was observed when lowering the temperature to below 80 K. This behaviour was fitted to the known existing models, and good values of the calculated parameters were obtained (author)

  11. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  12. X-ray image intensifier camera tubes and semiconductor targets

    International Nuclear Information System (INIS)

    1979-01-01

    A semiconductor target for use in an image intensifier camera tube and a camera using the target are described. The semiconductor wafer for converting an electron image onto electrical signal consists mainly of a collector region, preferably n-type silicon. It has one side for receiving the electron image and an opposite side for storing charge carriers generated in the collector region by high energy electrons forming a charge image. The first side comprises a highly doped surface layer covered with a metal buffer layer permeable to the incident electrons and thick enough to dissipate some of the incident electron energy thereby improving the signal-to-noise ratio. This layer comprises beryllium on niobium on the highly doped silicon surface zone. Low energy Kα X-ray radiation is generated in the first layer, the radiation generated in the second layer (mainly Lα radiation) is strongly absorbed in the silicon layer. A camera tube using such a target with a photocathode for converting an X-ray image into an electron image, means to project this image onto the first side of the semiconductor wafer and means to read out the charge pattern on the second side are also described. (U.K.)

  13. Theory of temperature dependent photoemission spectrum of heavy fermion semiconductors

    International Nuclear Information System (INIS)

    Riseborough, P.S.

    1998-01-01

    The heavy fermion semiconductors are a class of strongly correlated materials, that at high temperatures show properties similar to those of heavy fermion materials, but at low temperatures show a cross-over into a semi-conducting state. The low temperature insulating state is characterized by an anomalously small energy gap, varying between 10 and 100 K. The smallness of the gap is attributed to the result of a many-body renormalization, and is temperature dependent. The temperature dependence of the electronic spectral density of states is calculated, using the Anderson lattice model at half filling. The spectrum is calculated to second order in 1/N, where N is the degeneracy of the 'f' orbitals, using a slave boson technique. The system is an indirect gap semi-conductor, with an extremely temperature dependent electronic spectral density A(k, ω). The indirect gap is subject to a temperature dependent many-body renormalization, and leads to a sharp temperature dependent structure in the angle resolved photo-emission spectrum at the indirect threshold. The theoretical predictions are compared with experimental observations on FeSi. (Copyright (1998) World Scientific Publishing Co. Pte. Ltd)

  14. Curie temperature trends in (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; König, J.; Sinova, J.; Kučera, Jan; MacDonald, A. H.

    2002-01-01

    Roč. 66, č. 1 (2002), s. 012402-1-012402-4 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.10; GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * Curie temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  15. Phonon emission in a degenerate semiconductor at low lattice temperatures

    International Nuclear Information System (INIS)

    Midday, S.; Nag, S.; Bhattacharya, D.P.

    2015-01-01

    The characteristics of phonon growth in a degenerate semiconductor at low lattice temperatures have been studied for inelastic interaction of non-equilibrium electrons with the intravalley acoustic phonons. The energy of the phonon and the full form of the phonon distribution are taken into account. The results reveal significant changes in the growth characteristics compared to the same for a non-degenerate material

  16. Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

    2010-07-15

    Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  17. A novel method for simultaneous observations of plasma ion and electron temperatures using a semiconductor-detector array

    International Nuclear Information System (INIS)

    Cho, T.; Numakura, T.; Kohagura, J.; Hirata, M.; Minami, R.; Watanabe, H.; Sasuga, T.; Nishizawa, Y.; Yoshida, M.; Nagashima, S.; Nakashima, Y.; Ogura, K.; Tamano, T.; Yatsu, K.; Miyoshi, S.

    2002-01-01

    A new method for a simultaneous observation of both plasma ion and electron temperatures is proposed using one semiconductor-detector array alone. This method will provide a new application of semiconductor-detector arrays for monitoring the key parameter set of nuclear-fusion triple product (i.e., ion temperatures, densities, and confinement time) as well as for clarifying physics mechanisms of energy transport between plasma ions and electrons under various plasma confining conditions. This method is developed on the basis of an alternative 'positive' use of a semiconductor 'dead layer'; that is, an SiO 2 layer is employed as a reliable ultra-thin energy analysis filter for low-energy charge-exchanged neutral particles from plasmas ranging in ion temperatures from 0.1 to several tens of kilo-electron-volts. Using recent fabrication techniques for the thin and uniform SiO 2 layers of the order of tens to hundreds of angstrom, our computer simulation and its experimental verification show the availability of such semiconductors for distinguishing neutral particles (for ion temperatures) from X-rays (for electron temperatures). These are simultaneously emitted from the plasmas into semiconductor detectors; however, we employ their quite different penetration lengths and the resultant different deposition depths and profiles in semiconductor materials. As a result, their output signals are distinguishable for these two different and fundamental species of plasmas

  18. SÍNTESIS, CARACTERIZACIÓN ESTRUCTURAL Y PROPIEDADES MAGNÉTICAS DE COMPUESTOS SEMICONDUCTORES DEL TIPO Dy (x In (1-x Sb ISYNTHESIS, STRUCTURAL CHARACTERIZATION AND MAGNETIC PROPERTIES OF SEMICONDUCTOR COMPOUNDS OF TYPE Dy x In (1-x S

    Directory of Open Access Journals (Sweden)

    Euclides J. Velazco Rivero

    2018-04-01

    Full Text Available Semiconductor compounds of molecular formula of type DyxIn (1-x Sb (x = 0,02; 0,03; 0,04; 0,05; 0,06 y 0,07 were synthesized by means of direct interaction of the elements under heat treatment to 550°C during 11 days in vacuum sealed quartz ampoules. The analyses by X-rays diffraction showed that the compounds with x = 0,02; 0,03 y 0,04 presented pure phases of InSb doped with Dy without presence of alternate phases of DySb. These compounds, analyzed by scanning electronic microscopy – SEM, showed particles with a variety of shapes and sizes each one. Whereas the magnetic susceptibility measurements showed that those doped compounds, in spite of their paramagnetic behavior, the predominant magnetic interaction is ferromagnetic due to their positive Curie temperature

  19. Stable room-temperature thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

    2017-10-01

    Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  20. Stable room-temperature thallium bromide semiconductor radiation detectors

    Directory of Open Access Journals (Sweden)

    A. Datta

    2017-10-01

    Full Text Available Thallium bromide (TlBr is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br− species, with an estimated electro-diffusion velocity of 10−8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br− ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  1. Dual-Energy Semiconductor Detector of X-rays and Gamma Radiation

    Directory of Open Access Journals (Sweden)

    Brodyn, M.S.

    2014-03-01

    Full Text Available Analysis of the major types of ionizing radiation detectors, their advantages and disadvantages are presented. Application of ZnSe-based semiconductor detector in high temperature environment is substantiated. Different forms of ZnSe-based detector samples and double-crystal scheme for registration of X- and gamma rays in a broad energy range were used . Based on the manufactured simulator device, the study sustains the feasibility of the gamma quanta recording by a high-resistance ZnSe-based detector operating in a perpulse mode.

  2. Temperature and frequency response of conductivity in Ag2S doped chalcogenide glassy semiconductor

    Science.gov (United States)

    Ojha, Swarupa; Das, Anindya Sundar; Roy, Madhab; Bhattacharya, Sanjib

    2018-06-01

    The electric conductivity of chalcogenide glassy semiconductor xAg2S-(1-x)(0.5S-0.5Te) has been presented here as a function of temperature and frequency. Formation of different nanocrystallites has been confirmed from X-ray diffraction study. It is also noteworthy that average size of nanocrystallites decreases with the increase of dislocation density. Dc conductivity data have been interpreted using Mott's model and Greaves's model in low and high temperature regions respectively. Ac conductivity above the room temperature has been analyzed using Meyer-Neldel (MN) conduction rule. It is interestingly noted that Correlated Barrier Hopping (CBH) model is the most appropriate conduction mechanism for x = 0.35, where pairs of charge carrier are considered to hop over the potential barrier between the sites via thermal activation. To interpret experimental data for x = 0.45, modified non-overlapping small polaron tunnelling (NSPT) model is supposed to be appropriate model due to tunnelling through grain boundary. The conductivity spectra at various temperatures have been analyzed using Almond-West Formalism (power law model). Scaling of conductivity spectra reveals that electrical relaxation process of charge carriers (polaron) is temperature independent but depends upon the composition of the present chalcogenide glassy system.

  3. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

    2009-09-07

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

  4. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    International Nuclear Information System (INIS)

    Guerra, P; Santos, A; Darambara, D G

    2009-01-01

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm 3 CdZnTe pixellated detector.

  5. Optical, Electrical and Photocatalytic Properties of the Ternary Semiconductors ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS

    Directory of Open Access Journals (Sweden)

    Sandra Andrea Mayén-Hernández

    2014-01-01

    Full Text Available The effects of vacuum annealing at different temperatures on the optical, electrical and photocatalytic properties of polycrystalline and amorphous thin films of the ternary semiconductor alloys ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS were investigated in stacks of binary semiconductors obtained by chemical bath deposition. The electrical properties were measured at room temperature using a four-contact probe in the Van der Pauw configuration. The energy band gap of the films varied from 2.30 to 2.85 eV. The photocatalytic activity of the semiconductor thin films was evaluated by the degradation of an aqueous methylene blue solution. The thin film of ZnxCd1-xS annealed under vacuum at 300°C exhibited the highest photocatalytic activity.

  6. Nanoscale semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin Shaoxiong; Zhang Xin; Shi Xuezhao; Wei Jinping; Lu Daban; Zhang Yuzhen; Kou Huanhuan [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Wang Chunming, E-mail: wangcm@lzu.edu.cn [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China)

    2011-04-15

    In this paper the fabrication and characterization of IV-VI semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films on gold substrate by electrochemical atomic layer deposition (EC-ALD) method at room temperature are reported. Cyclic voltammetry (CV) is used to determine approximate deposition potentials for each element. The amperometric I-t technique is used to fabricate the semiconductor alloy. The elements are deposited in the following sequence: (Se/Pb/Se/Pb/Se/Pb/Se/Pb/Se/Sn ...), each period is formed using four ALD cycles of PbSe followed by one cycle of SnSe. Then the deposition manner above is cyclic repeated till a satisfactory film with expected thickness of Pb{sub 1-x}Sn{sub x}Se is obtained. The morphology of the deposit is observed by field emission scanning electron microscopy (FE-SEM). X-ray diffraction (XRD) pattern is used to study its crystalline structure; X-ray photoelectron spectroscopy (XPS) of the deposit indicates an approximate ratio 1.0:0.8:0.2 of Se, Pb and Sn, as the expected stoichiometry for the deposit. Open-circuit potential (OCP) studies indicate a good p-type property, and the good optical activity makes it suitable for fabricating a photoelectric switch.

  7. Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaolong; He, Yongning, E-mail: yongning@mail.xjtu.edu.cn; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Chen, Liang; Liu, Jinliang; Zhang, Zhongbing; Ouyang, Xiaoping [Radiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)

    2016-04-25

    The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 10{sup 13} Ω cm due to the compensation of the donor defects (V{sub O}) and acceptor defects (V{sub Zn} and O{sub i}) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

  8. Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Roecker, Caleb Daniel [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Schirato, Richard C. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-11-17

    Charge trapping, resulting in a decreased and spatially dependent electric field, has long been a concern for wide bandgap semiconductor detectors. While significant work has been performed to characterize this degradation at varying temperatures and radiation environments, this work concentrates upon examining the event-to-event response in a flash X-ray environment. The following work investigates if charge trapping is a problem for CZT detectors, with particular emphasis on flash X-ray radiation fields at cold temperatures. Results are compared to a non-flash radiation field, using an Am-241 alpha source and similar temperature transitions. Our ability to determine if a response change occurred was hampered by the repeatability of our flash X-ray systems; a small response change was observed with the Am-241 source. Due to contrast of these results, we are in the process of revisiting the Am-241 measurements in the presence of a high radiation environment. If the response change is more pronounced in the high radiation environment, a similar test will be performed in the flash X-ray environment.

  9. Room temperature triplet state spectroscopy of organic semiconductors.

    Science.gov (United States)

    Reineke, Sebastian; Baldo, Marc A

    2014-01-21

    Organic light-emitting devices and solar cells are devices that create, manipulate, and convert excited states in organic semiconductors. It is crucial to characterize these excited states, or excitons, to optimize device performance in applications like displays and solar energy harvesting. This is complicated if the excited state is a triplet because the electronic transition is 'dark' with a vanishing oscillator strength. As a consequence, triplet state spectroscopy must usually be performed at cryogenic temperatures to reduce competition from non-radiative rates. Here, we control non-radiative rates by engineering a solid-state host matrix containing the target molecule, allowing the observation of phosphorescence at room temperature and alleviating constraints of cryogenic experiments. We test these techniques on a wide range of materials with functionalities spanning multi-exciton generation (singlet exciton fission), organic light emitting device host materials, and thermally activated delayed fluorescence type emitters. Control of non-radiative modes in the matrix surrounding a target molecule may also have broader applications in light-emitting and photovoltaic devices.

  10. Semiconductor detectors in current energy dispersive X-ray spectral analysis

    Energy Technology Data Exchange (ETDEWEB)

    Betin, J; Zhabin, E; Krampit, I; Smirnov, V

    1980-04-01

    A review is presented of the properties of semiconductor detectors and of the possibilities stemming therefrom of using the detectors in X-ray spectral analysis in industries, in logging, in ecology and environmental control, in medicine, etc.

  11. Electronic paramagnetic resonance in the Mn In X (X:Te,S) diluted magnetic semiconductor system; Resonancia paramagnetica electronica en el sistema semiconductor magnetico diluido Cd Mn In X (X:Te,S)

    Energy Technology Data Exchange (ETDEWEB)

    Vincent, Bernardo; Betancourt, Luis; Sagredo, Vicente [Universidad de los Andes, Merida (Venezuela). Dept. de Fisica; Alcala, Rafael [Zaragoza Univ. (Spain). Dept. de Fisica de la Materia Condensada

    1997-12-31

    Semiconductor compounds wit the II-III-VI stoichiometry are very interesting materials since they present very good semiconducting characteristics and, along with strong magnetic properties, these II Mn In VI compounds have a great potential as opt and magneto-electronic devices. Among the possible magnetic properties of the materials is the presence of the spin-glass phase. Electron paramagnetic resonance is one of the techniques used to confirm this phase. The chosen crystals were chosen by chemical vapor transport. The absorption lines of these two families with 0.1 x 1 were all Lorentzian in shape and centred at g=2. A large broadening of the resonance line width was observed when lowering the temperature to below 80 K. This behaviour was fitted to the known existing models, and good values of the calculated parameters were obtained (author). 18 refs., 2 figs., 2 tabs.

  12. Temperature dependence of the electronic structure of semiconductors and insulators

    Energy Technology Data Exchange (ETDEWEB)

    Poncé, S., E-mail: samuel.pon@gmail.com; Gillet, Y.; Laflamme Janssen, J.; Gonze, X. [European Theoretical Spectroscopy Facility and Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, Chemin des étoiles 8, bte L07.03.01, B-1348 Louvain-la-neuve (Belgium); Marini, A. [Consiglio Nazionale delle Ricerche (CNR), Via Salaria Km 29.3, CP 10, 00016 Monterotondo Stazione (Italy); Verstraete, M. [European Theoretical Spectroscopy Facility and Physique des matériaux et nanostructures, Université de Liège, Allée du 6 Août 17, B-4000 Liège (Belgium)

    2015-09-14

    The renormalization of electronic eigenenergies due to electron-phonon coupling (temperature dependence and zero-point motion effect) is sizable in many materials with light atoms. This effect, often neglected in ab initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the recent progresses in this field and a brief overview of the theory, we focus on the issue of phonon wavevector sampling convergence, until now poorly understood. Indeed, the renormalization is obtained numerically through a slowly converging q-point integration. For non-zero Born effective charges, we show that a divergence appears in the electron-phonon matrix elements at q → Γ, leading to a divergence of the adiabatic renormalization at band extrema. This problem is exacerbated by the slow convergence of Born effective charges with electronic wavevector sampling, which leaves residual Born effective charges in ab initio calculations on materials that are physically devoid of such charges. Here, we propose a solution that improves this convergence. However, for materials where Born effective charges are physically non-zero, the divergence of the renormalization indicates a breakdown of the adiabatic harmonic approximation, which we assess here by switching to the non-adiabatic harmonic approximation. Also, we study the convergence behavior of the renormalization and develop reliable extrapolation schemes to obtain the converged results. Finally, the adiabatic and non-adiabatic theories, with corrections for the slow Born effective charge convergence problem (and the associated divergence) are applied to the study of five semiconductors and insulators: α-AlN, β-AlN, BN, diamond, and silicon. For these five materials, we present the zero-point renormalization, temperature dependence, phonon-induced lifetime broadening, and the renormalized electronic band structure.

  13. Semiconductor terahertz technology devices and systems at room temperature operation

    CERN Document Server

    Carpintero, G; Hartnagel, H; Preu, S; Raisanen, A

    2015-01-01

    Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap".  This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Tempe

  14. Particle detection with semiconductor thermistors at low temperatures

    International Nuclear Information System (INIS)

    Wang, N.; Beeman, J.; Cleland, A.N.

    1988-11-01

    We have studied the use of neutron transmutation doped (NTD) Ge thermistors as phonon sensors at dilution refrigerator temperatures. In addition to measuring their thermal and electrical properties, we have observed pulses generated by X-rays incident on a thermistor thermally well-clamped to a heat sink. We find that during these pulses the lattice temperature of the thermistor apparently does not change. This surprising result is interpreted as evidence of a strong coupling between the high energy phonons generated by the interaction and the charge carriers in the thermistor. Additionally, these phonons appear to be absorbed within a fraction of a millimeter. We conclude that these thermistors have several desirable properties for a good high energy phonon sensor. It remains to be seen, however, if a composite detector consisting of a large crystal and attached phonon sensors can be developed. 15 refs., 9 figs

  15. Particle detection with semiconductor thermistors at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Wang, N.; Beeman, J.; Cleland, A.N.; Cummings, A.; Lange, A.; Ross, R.; Sadoulet, B.; Steiner, H.; Shutt, T.; Wellstood, F.C.

    1988-11-01

    We have studied the use of neutron transmutation doped (NTD) Ge thermistors as phonon sensors at dilution refrigerator temperatures. In addition to measuring their thermal and electrical properties, we have observed pulses generated by X-rays incident on a thermistor thermally well-clamped to a heat sink. We find that during these pulses the lattice temperature of the thermistor apparently does not change. This surprising result is interpreted as evidence of a strong coupling between the high energy phonons generated by the interaction and the charge carriers in the thermistor. Additionally, these phonons appear to be absorbed within a fraction of a millimeter. We conclude that these thermistors have several desirable properties for a good high energy phonon sensor. It remains to be seen, however, if a composite detector consisting of a large crystal and attached phonon sensors can be developed. 15 refs., 9 figs.

  16. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-05-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  17. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-03-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  18. Soft X-ray spectromicroscopy and application to semiconductor microstructure characterization

    International Nuclear Information System (INIS)

    Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z.; Warwick, A.; Padmore, H.A.; Triplett, B.B.

    1997-01-01

    The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved by conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at thr Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An Advanced Light Source μ-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers. (author)

  19. Soft X-ray spectromicroscopy and its application to semiconductor microstructure characterization

    International Nuclear Information System (INIS)

    Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z.

    1996-01-01

    The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An ALS(mu)-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers

  20. Ab-initio calculations of Co-based diluted magnetic semiconductors Cd 1-xCoxX (X=S, Se, Te)

    KAUST Repository

    Saeed, Yasir; Nazir, Safdar; Shaukat, Ali; Reshak, A. H.

    2010-01-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic semiconductors composed of IIVI compounds Cd1-xCoxX (X=S, Se, Te) at x=0.25. From the calculated results

  1. Ferrimagnetic resonance study on photo-induced magnetism in hybrid magnetic semiconductor V(TCNE)x, x ˜2 film

    Science.gov (United States)

    Yoo, Jung-Woo; Shima Edelstein, R.; Lincoln, D. M.; Epstein, A. J.

    2007-03-01

    The V(TCNE)x, x˜2 is a fully spin-polarized magnetic semiconductor, whose magnetic order exceeds room temperature (Tc > 350 K), and electronic transport follows hopping mechanism through the Coulomb energy split &*circ; subband. In addition, it was determined that this material has thermally reversible persistent change in both magnetism and conductivity driven by the optical excitation [1]. Here, we report detailed investigation on photo-induced magnetism in V(TCNE)x by employing ferrimagnetic resonance (PIFMR) study with an in-situ light illumination. Upon optical excitation (λ˜ 457.9 nm), the FMR spectra display substantial change in their linewidth and resonance field. Angular dependence analyses of line shift indicate the increase of unixial anisotropy field in the film caused by the light irradiation. The results demonstrated that the change in overall magnetic anisotropy by the illumination plays an important role in inducing photo- induced magnetism in (TCNE) class magnet. [1] J.-W. Yoo, et al. to be published in Phys. Rev. Lett.

  2. Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

    Directory of Open Access Journals (Sweden)

    Alex Hayat

    2012-12-01

    Full Text Available We report the demonstration of hybrid high-T_{c}-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_{c}-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with graphite or Bi_{2}Te_{3}. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

  3. Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

    CERN Document Server

    Pereira, LMC; Wahl, U

    Scientific findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last fe...

  4. X-ray studies of microstructures in semiconductors and superconducting materials

    International Nuclear Information System (INIS)

    Kao, Y.H.

    1991-01-01

    Several different experimental investigations were carried out during the present report period. These include x-ray studies of semiconductors, high-T c superconductors, and various thin films using synchrotron radiation (especially soft x-ray experiments by means of our new detector) and measurements of some fundamental properties of new superconducting materials made in our laboratory at Buffalo. We have made the first systematic study of electronic structure in the high-T c superconductors La 2-x Sr x CuO 4 with x ranging from 0 to 0.15 by x-ray absorption spectroscopy (XAS)

  5. In situ X-ray synchrotron study of organic semiconductor ultra-thin films growth

    International Nuclear Information System (INIS)

    Moulin, J.-F.; Dinelli, F.; Massi, M.; Albonetti, C.; Kshirsagar, R.; Biscarini, F.

    2006-01-01

    In this work we present an X-ray diffraction study of the early stages of growth of an organic semiconductor (sexithiophene, T 6 ) thin film prepared by high vacuum sublimation. Specular reflectometry and grazing incidence X-ray diffraction were used to monitor the formation of T 6 films on silicon oxide. Our results show that T 6 grows as a crystalline layer from the beginning of the evaporation. The reflectometry analysis suggests that, in the range of rates and temperatures studied, the growth is never layer by layer but rather 3D in nature. In-plane GIXD has allowed us to observe for the first time a thin film phase of T 6 formed of molecules standing normal to the substrate and arranged in a compressed unit cell with respect to the bulk, i.e. the unit cell parameters b and c are relatively smaller. We have followed the dynamics of formation of this new phase and identified the threshold of appearance of the bulk phase, which occurs above ∼5-6 monolayers. These results are relevant to the problem of organic thin film transistors, for which we have previously demonstrated experimentally that only the first two monolayers of T 6 films are involved in the electrical transport. The layers above the second one do not effectively contribute to charge mobility, either because they are more 'disordered' or because of a screening of the gate field

  6. Low-temperature magnetization of (Ga,Mn)As semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Mašek, Jan; Wang, K. Y.; Edmonds, K. W.; Sawicki, M.; Polini, M.; Sinova, J.; MacDonald, A. H.; Campion, R. P.; Zhao, L.X.; Farley, N.R.S.; Johal, T.K.; van der Laan, G.; Foxon, C. T.; Gallagher, B. L.

    2006-01-01

    Roč. 73, č. 16 (2006), 165205/1-165205/11 ISSN 1098-0121 R&D Projects: GA ČR GA202/05/0575 Grant - others:EPSRC(GB) GR/S81407/01; FENIKS(XE) EC:G5RD-CT-2001-00535; US Department of Energy(US) DE-FG03-02ER45958 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * magnetization Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.107, year: 2006

  7. Study on deep levels in near-surface region of Hgsub(1-x)Cdsub(x)Te semiconductor

    International Nuclear Information System (INIS)

    Antonov, V.V.; Vojtsekhovskij, A.V.; Kazak, E.P.; Lanskaya, O.G.; Pakhorukov, V.A.

    1983-01-01

    Experimental investigation into MOS-structures on the basis of narrow-band n-Hgsub(1-x)Cdsub(X)Te semiconductor was conducted. Anode-oxide film, grown in 0.1N KOH solution in ethylenglycol was used as dielectric laer, olt-farad characteristics of the MOS- structures, measured, at different frequencies of test voltage, testify to the presence of deep monoenergetic levels (Esub(t)) in near surface region of semicondUctor located within the limits of the energy gap of Hgsub(1-x)Cdsub(x)Te. Two types of levels are observed in the n-Hgsub(1-x)Cdsub(x)Te-base MOS-structures at x approximately equal to 0.21: Isub(t)=0.105-0.096 eV and Esub(t)=0.045-0.042 eV (with respect to the valent zone ceiling). The frequency dependence of the equivalent parallel conductivity of the Hgsub(1-x)Cdsub(x)Te-base MOS-structure different voltages on a field electrode was used to show, that the observed deep level has the bulk nature. Results of numeral estimations of the state densities on the impurity center and of capture cross-section of a positive charge (deltasub(p)=6.7x10 -17 -1.4x10 -16 )sm 2 ) are given

  8. P-N semiconductor junctions used as X-ray detectors

    International Nuclear Information System (INIS)

    Pela, C.A.; Bruco, J.L.; Navas, E.A.; Paula, E. de; Guilardi Neto, T.

    1987-01-01

    The current response of some comercial P-N semiconductor junctions in function of X-ray incidency, in 40 to 140 KVp band used in diagnosis was characterized. Some junctions were also exposed to radiation of 80 to 250 KVp used in therapy. (C.G.C.) [pt

  9. Semiconductor detectors in current energy dispersive X-ray spectral analysis

    International Nuclear Information System (INIS)

    Betin, J.; Zhabin, E.; Krampit, I.; Smirnov, V.

    1980-01-01

    A review is presented of the properties of semiconductor detectors and of the possibilities stemming therefrom of using the detectors in X-ray spectral analysis in industries, in logging, in ecology and environmental control, in medicine, etc. (M.S.)

  10. X-ray microscopy: An emerging technique for semiconductor microstructure characterization

    International Nuclear Information System (INIS)

    Padmore, H.A.

    1998-05-01

    The advent of third generation synchrotron radiation x-ray sources, such as the Advanced Light Source (ALS) at Berkeley have enabled the practical realization of a wide range of new techniques in which mature chemical or structural probes such as x-ray photoelectron spectroscopy (XPS) and x-ray diffraction are used in conjunction with microfocused x-ray beams. In this paper the characteristics of some of these new microscopes are described, particularly in reference to their applicability to the characterization of semiconductor microstructures

  11. CdS_xTe_1_-_x ternary semiconductors band gaps calculation using ground state and GW approximations

    International Nuclear Information System (INIS)

    Kheloufi, Nawal; Bouzid, Abderrazak

    2016-01-01

    We present band gap calculations of zinc-blende ternary CdS_xTe_1_-_x semiconductors within the standard DFT and quasiparticle calculations employing pseudopotential method. The DFT, the local density approximation (LDA) and the Generalized Gradient Approximation (GGA) based calculations have given very poor results compared to experimental data. The quasiparticle calculations have been investigated via the one-shot GW approximation. The present paper discuses and confirms the effect of inclusion of the semicore states in the cadmium (Cd) pseudopotential. The obtained GW quasiparticle band gap using Cd"+"2"0 pseudopotential has been improved compared to the obtained results from the available pseudopotential without the treatment of semicore states. Our DFT and quasiparticle band gap results are discussed and compared to the available theoretical calculations and experimental data. - Graphical abstract: Band gaps improvement concerning the binary and ternary alloys using the GW approximation and Cd"2"0"+ pseudopotential with others levels of approximations (the LDA and GGA approximation employing the Cd"1"2"+ and the LDA within Cd"2"0"+ pseudopotential). - Highlights: • The direct Γ- Γ and indirect Γ- X and Γ- L bands gaps show a nonlinear behavior when S content is enhanced. • The quasiparticle band gap result for the investigated semiconductors is improved using the GW approximation. • All CdS_xTe_1_-_x compounds in all compositions range from 0 to 1 are direct band gap semiconductors.

  12. Study of semiconductor detectors applied to diagnostic X-ray

    International Nuclear Information System (INIS)

    Salgado, Cesar Marques

    2003-08-01

    This work aims an evaluation of procedures for photons spectrum determination, produced by a X ray tube, normally used for medical diagnoses which operation voltage ranges from 20 to 150 kVp, to allow more precise characterization of the photon beam. The use of spectrum analysis will contribute to reduce the uncertainty in the ionization camera calibrations. For this purpose, two kind of detectors were selected, a Cadmium Zinc Telluride (CZT) and a planar HPGe detector. The X ray interaction with the detector's crystal produces, by electronic processes, a pulse high distribution as an output, which is no the true photon spectrum, due to the presence of K shell escape peaks, Compton scattering and to the fact that the detectors efficiency diminish rapidly with the increase of the photon energy. A detailed analysis of the contributing factors to distortions in the spectrum is necessary and was performed by Monte Carlo calculation with the MCNP 4B computer code. In order to determine the actual photon spectrum for a X ray tube a spectra stripping procedure is described for the HPGe detector. The detector's response curves, determined by the Monte Carlo calculation, were compared to the experimental ones, for isotropic point sources. For the methodology validation, stripped spectra were compared to the theoretical ones, for the same X ray tube's settings, for a qualitative evaluation. The air kerma rate calculated with the photon spectra were compared to the direct measurement using an ionization chamber, for a quantitative evaluation. (author)

  13. X-ray semiconductor spectrometer with light feedback

    International Nuclear Information System (INIS)

    Zubareva, A.M.; Iliev, S.; Kushniruk, V.F.; Rykhlyuk, A.V.; Subbotin, V.G.; Kharitonov, Yu.P.

    1977-01-01

    An X-ray spectrometer with the pulse light feedback in the preamplifier has been designed. The resolution has been obtained to be 168 eV on line of 5.9 keV. The analysis of the electronics and detector contribution to the resolution has been performed

  14. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    CERN Document Server

    Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

    1999-01-01

    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  15. X-ray measurement with Pin type semiconductor detectors

    International Nuclear Information System (INIS)

    Ramirez J, F.J.

    1999-01-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  16. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  17. Influence of temperature on the spectral characteristics of semiconductor lasers in the visible range

    Science.gov (United States)

    Adamov, A. A.; Baranov, M. S.; Khramov, V. N.

    2018-04-01

    The results of studies on the effect of temperature on the output spectral characteristics of continuous semiconductor lasers of the visible range are presented. The paper presents the results of studying the spectral-optical radiation parameters of semiconductor lasers, their coherence lengths, and the dependence of the position of the spectral peak of the wavelength on temperature. This is necessary for the selection of the most optimal laser in order to use it for medical ophthalmologic diagnosis. The experiment was carried out using semiconductor laser modules based on a laser diode. The spectra were recorded by using a two-channel automated spectral complex based on the MDR-23 monochromator. Spectral dependences on the temperature of semiconductor lasers are obtained, in the range from 300 to 370 K. The possibility of determining the internal damage to the stabilization of laser modules without opening the case is shown, but only with the use of their spectral characteristics. The obtained data allow taking into account temperature characteristics and further optimization of parameters of such lasers when used in medical practice, in particular, in ophthalmologic diagnostics.

  18. Temperature-dependent built-in potential in organic semiconductor devices

    NARCIS (Netherlands)

    Kemerink, M.; Kramer, J.M.; Gommans, H.H.P.; Janssen, R.A.J.

    2006-01-01

    The temperature dependence of the built-in voltage of organic semiconductor devices is studied. The results are interpreted using a simple analytical model for the band bending at the electrodes. It is based on the notion that, even at zero current, diffusion may cause a significant charge density

  19. Radiation damage measurements in room temperature semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Franks, L.A.; Olsen, R.W.; James, R.B.; Brunett, B.A.; Walsh, D.S.; Doyle, B.L.; Vizkelethy, G.; Trombka, J.I.

    1998-01-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI 2 ) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 10 p/cm 2 and significant bulk leakage after 10 12 p/cm 2 . CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 x 10 9 p/cm 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10 10 n/cm 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 x 10 10 α/cm 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 x 10 9 α/cm 2 . CT detectors show resolution losses after fluences of 3 x 10 9 p/cm 2 at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 x 10 10 n/cm 2 . Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10 12 p/cm 2 and with 1.5 GeV protons at fluences up to 1.2 x 10 8 p/cm 2 . Neutron exposures at 8 MeV have been reported at fluences up to 10 15 n/cm 2 . No radiation damage was reported under these irradiation conditions

  20. Low temperature anomaly of light stimulated magnetization and heat capacity of the 1D diluted magnetic semiconductors

    Science.gov (United States)

    Geffe, Chernet Amente

    2018-03-01

    This article reports magnetization and specific heat capacity anomalies in one dimensional diluted magnetic semiconductors observed at very low temperatures. Based on quantum field theory double time temperature dependent Green function technique is employed to evaluate magnon dispersion and the time correlation function. It is understood that magnon-photon coupling and magnetic impurity concentration controls both, such that near absolute temperature magnetization is nearly zero and abruptly increase to saturation level with decreasing magnon-photon coupling strength. We also found out dropping of magnetic specific heat capacity as a result of increase in magnetic impurity concentration x, perhaps because of inter-band disorder that would suppress the enhancement of density of spin waves.

  1. Low temperature anomaly of light stimulated magnetization and heat capacity of the 1D diluted magnetic semiconductors

    Directory of Open Access Journals (Sweden)

    Chernet Amente Geffe

    2018-03-01

    Full Text Available This article reports magnetization and specific heat capacity anomalies in one dimensional diluted magnetic semiconductors observed at very low temperatures. Based on quantum field theory double time temperature dependent Green function technique is employed to evaluate magnon dispersion and the time correlation function. It is understood that magnon-photon coupling and magnetic impurity concentration controls both, such that near absolute temperature magnetization is nearly zero and abruptly increase to saturation level with decreasing magnon-photon coupling strength. We also found out dropping of magnetic specific heat capacity as a result of increase in magnetic impurity concentration x, perhaps because of inter-band disorder that would suppress the enhancement of density of spin waves.

  2. High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials

    Directory of Open Access Journals (Sweden)

    Theodor Doll

    2006-04-01

    Full Text Available Micromachined thermal heater platforms offer low electrical power consumptionand high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR gas- and liquid monitoring systems. In this paper, we report oninvestigations on silicon-on-insulator (SOI based infrared (IR emitter devices heated byemploying different kinds of metallic and semiconductor heater materials. Our resultsclearly reveal the superior high-temperature performance of semiconductor over metallicheater materials. Long-term stable emitter operation in the vicinity of 1300 K could beattained using heavily antimony-doped tin dioxide (SnO2:Sb heater elements.

  3. Semiconductor X-ray spectrometer with light feedback

    International Nuclear Information System (INIS)

    Zubareva, A.M.; Iliev, S.; Kushniruk, V.F.; Rykhlyuk, A.V.; Subbotin, V.G.; Kharitonov, Yu.P.

    1978-01-01

    An X-ray spectrometer has been designed consisting of a preamplifier with light pulse feedback, and a Si (Li) detector. The electric(FET) circuit is given of the preamplifier designed on field effect transistors. An identification is made of the types of noises of a sink current of 7.5 mA. It is established that a significant part of the total noise comes from the detector-FET system, and white noise from leakage current in the detector. The use in the spectrometer of the preamplifier with light pulse feedback enables the white noise to be reduced to 40-45 eV with a detector leakage current of 10 -13 A. A decrease in the noise of the detector-FET system is only possible owing to the improved technology in the manufacture of FET's. The energy resolution of the spectrometer for the 5.9 keV line is 168 eV

  4. X-ray measurement with Pin type semiconductor detectors; Medicion de rayos X con detectores de semiconductor tipo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, Departamento de Electronica, C.P. 52045 Salazar, Estado de Mexico (Mexico)

    2000-07-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  5. First principles investigation of half-metallicity and spin gapless semiconductor in CH3NH3Cr x Pb1- x I3 mixed perovskites

    Science.gov (United States)

    Huang, H. M.; Zhu, Z. W.; Zhang, C. K.; He, Z. D.; Luo, S. J.

    2018-04-01

    The structural, electronic and magnetic properties of organic-inorganic hybrid mixed perovskites CH3NH3Cr x Pb1- x I3 ( x = 0.25, 0.50, 0.75, 1.00) in cubic, tetragonal and orthorhombic phases have been investigated by first-principles calculation. The results indicate that the tetragonal CH3NH3Cr0.75Pb0.25I3 is a spin gapless semiconductor with Curie temperature of 663 K estimated using mean field approximation. All other CH3NH3Cr x Pb1- x I3 mixed perovskites are half-metallic ferromagnets together with 100% spin polarization, and their total magnetic moment are 4.00, 8.00, 12.00 and 16.00 µB per unit cell for x = 0.25, 0.50, 0.75 and 1.00, respectively. The effect of , and orientation of organic cation CH3NH3 + on the electronic properties of CH3NH3Cr0.50Pb0.50I3 was investigated. The results show that the CH3NH3 + in different orientations have a slight effect on the lattice constants, the energy gap in minority-spin states, half-metallic gap, local magnetic moment, and Curie temperature.

  6. High-temperature complementary metal oxide semiconductors (CMOS)

    International Nuclear Information System (INIS)

    McBrayer, J.D.

    1979-10-01

    Silicon CMOS devices were studied, tested, and evaluated at high temperatures to determine processing, geometric, operating characteristics, and stability parameters. After more than 1000 hours at 300 0 C, most devices showed good stability, reliability, and operating characteristics. Processing and geometric parameters were evaluated and optimization steps discussed

  7. Radiation damage measurements in room-temperature semiconductor radiation detectors

    CERN Document Server

    Franks, L A; Olsen, R W; Walsh, D S; Vizkelethy, G; Trombka, J I; Doyle, B L; James, R B

    1999-01-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI sub 2) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 sup 1 sup 0 p/cm sup 2 and significant bulk leakage after 10 sup 1 sup 2 p/cm sup 2. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5x10 sup 9 p/cm sup 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from a moderated fission spectrum of neutrons after fluences up to 10 sup 1 sup 0 n/cm sup 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particles at fluences up to 1.5x10 sup 1 sup 0 alpha/cm sup 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5x10 sup 9 alpha/cm sup 2. CT detectors show resolution...

  8. The simulation of charge sharing in semiconductor X-ray pixel detectors

    CERN Document Server

    Mathieson, K; O'Shea, V; Passmore, M S; Rahman, M; Smith, K M; Watt, J; Whitehill, C

    2002-01-01

    Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 mu m, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.

  9. Temperature distribution model for the semiconductor dew point detector

    Science.gov (United States)

    Weremczuk, Jerzy; Gniazdowski, Z.; Jachowicz, Ryszard; Lysko, Jan M.

    2001-08-01

    The simulation results of temperature distribution in the new type silicon dew point detector are presented in this paper. Calculations were done with use of the SMACEF simulation program. Fabricated structures, apart from the impedance detector used to the dew point detection, contained the resistive four terminal thermometer and two heaters. Two detector structures, the first one located on the silicon membrane and the second one placed on the bulk materials were compared in this paper.

  10. Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping

    Science.gov (United States)

    Sun, Zhuting; Burgess, Tim; Tan, H. H.; Jagadish, Chennupati; Kogan, Andrei

    2018-04-01

    We have investigated the nonlinear conductance in diffusion-doped Si:GaAs nanowires contacted by patterned metal films in a wide range of temperatures T. The wire resistance R W and the zero bias resistance R C, dominated by the contacts, exhibit very different responses to temperature changes. While R W shows almost no dependence on T, R C varies by several orders of magnitude as the devices are cooled from room temperature to T = 5 K. We develop a model that employs a sharp donor level very low in the GaAs conduction band and show that our observations are consistent with the model predictions. We then demonstrate that such measurements can be used to estimate carrier properties in nanostructured semiconductors and obtain an estimate for N D, the doping density in our samples. We also discuss the effects of surface states and dielectric confinement on carrier density in semiconductor nanowires.

  11. On temperature dependence of deformation mechanism and the brittle - ductile transition in semiconductors

    International Nuclear Information System (INIS)

    Pirouz, P.; Samant, A.V.; Hong, M.H.; Moulin, A.; Kubin, L.P.

    1999-01-01

    Recent deformation experiments on semiconductors have shown the occurrence of a break in the variation of the critical resolved shear stress of the crystal as a function of temperature. These and many other examples in the literature evidence a critical temperature at which a transition occurs in the deformation mechanism of the crystal. In this paper, the occurrence of a similar transition in two polytypes of SiC is reported and correlated to the microstructure of the deformed crystals investigated by transmission electron microscopy, which shows evidence for partial dislocations carrying the deformation at high stresses and low temperatures. Based on these results and data in the literature, the explanation is generalized to other semiconductors and a possible relationship to their brittle-ductile transition is proposed. copyright 1999 Materials Research Society

  12. Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

    International Nuclear Information System (INIS)

    Li Yali; Li Chunyang; He Deyan; Li Junshuai

    2009-01-01

    We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ∼4.6 x 10 -4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ∼1.21 x 10 21 cm -3 and a lower mobility of ∼11.4 cm 2 V -1 s -1 . More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.

  13. High-z semiconductor nuclear radiation detectors for room-temperature gamma-ray spectrometry

    International Nuclear Information System (INIS)

    Bornand, Bernard; Friant, Alain.

    1978-09-01

    A bibliographical review (182 articles of periodicals, conferences, reports, thesis and french patents) is presented, as addendum of the report CEA-BIB-210 (1974) on high-Z semiconductor compounds used as materials for the gamma and X-ray detection and spectrometry. This publication reviews issues from 1974 to 1977. References and summaries (in french) are incorporated into 182 bibliograhical notices. Index for authors, corporate authors, documents and periodicals, and subjects is included [fr

  14. Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device

    Directory of Open Access Journals (Sweden)

    Mohana Sundaram Muthuvalu

    2015-12-01

    Full Text Available High reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters to improve device reliability and extend operating life. The reliability of a semiconductor is determined by junction temperature. This paper gives a useful analysis on mathematical approach which can be implemented to predict temperature of a silicon die. The problem could be modeled as heat conduction equation. In this study, numerical approach based on implicit scheme and Arithmetic Mean (AM iterative method will be applied to solve the governing heat conduction equation. Numerical results are also included in order to assert the effectiveness of the proposed technique.

  15. Noise and optimum filtering in spectrometers with semiconductor detectors operating at elevated temperature

    International Nuclear Information System (INIS)

    Dabrowski, W.; Korbel, K.

    1983-01-01

    The importance of the excess noise in the semiconductor detectors operating at the elevated temperature is discussed. Under the assumption of a conventional CR-RC type filtration the variancy of the noise output is determined. The new term ''second noise-corner time constant'' was proposed. The expression for relative signal-to-noise ratio as the dependence on the noise as well as circuits time constants was derived. It was also presented in a graphical form. 12 refs., 6 figs. (author)

  16. High-resolution X-ray imaging - a powerful nondestructive technique for applications in semiconductor industry

    International Nuclear Information System (INIS)

    Zschech, Ehrenfried; Yun, Wenbing; Schneider, Gerd

    2008-01-01

    The availability of high-brilliance X-ray sources, high-precision X-ray focusing optics and very efficient CCD area detectors has contributed essentially to the development of transmission X-ray microscopy (TXM) and X-ray computed tomography (XCT) with sub-50 nm resolution. Particularly, the fabrication of high aspect ratio Fresnel zone plates with zone widths approaching 15 nm has contributed to the enormous improvement in spatial resolution during the previous years. Currently, Fresnel zone plates give the ability to reach spatial resolutions of 15 to 20 nm in the soft and of about 30 to 50 nm in the hard X-ray energy range. X-ray microscopes with rotating anode X-ray sources that can be installed in an analytical lab next to a semiconductor fab have been developed recently. These unique TXM/XCT systems provide an important new capability of nondestructive 3D imaging of internal circuit structures without destructive sample preparation such as cross sectioning. These lab systems can be used for failure localization in micro- and nanoelectronic structures and devices, e.g., to visualize voids and residuals in on-chip metal interconnects without physical modification of the chip. Synchrotron radiation experiments have been used to study new processes and materials that have to be introduced into the semiconductor industry. The potential of TXM using synchrotron radiation in the soft X-ray energy range is shown for the nondestructive in situ imaging of void evolution in embedded on-chip copper interconnect structures during electromigration and for the imaging of different types of insulating thin films between the on-chip interconnects (spectromicroscopy). (orig.)

  17. Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

    Science.gov (United States)

    Ha, Jang Ho; Kim, Han Soo

    2013-11-01

    The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an (241)Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation. Copyright © 2013 Elsevier Ltd. All rights reserved.

  18. Growth and XRD analysis of the diluted magnetic semiconductor Zn{sub 1-x}Ni{sub x}O

    Energy Technology Data Exchange (ETDEWEB)

    Syed Ali, K.S. [Department of Science, Estill High School, Post Office Box 754, Estill, South Carolina - 29918 (United States); Saravanan, R. [Department of Physics, The Madura College, Madurai - 625 011 (India); Acikgoez, M. [Bahcesehir University, Faculty of Arts and Sciences, Besiktas - 34349 (Turkey)

    2011-01-15

    Diluted magnetic semiconductor compound Zn{sub 1-x}Ni{sub x} O(x =0.01, 0.02, 0.03, 0.04 and 0.05) was prepared by sol-gel method and characterized using powder XRD for the distribution of electrons and bonding in the unit cell. The electronic structural studies of this material were carried out by maximum entropy method (MEM) for the quantitative and qualitative measurement on the inclusion and the effect induced on bonding by Ni doping. The spatial arrangement of charge and the bonding behavior of this material were analyzed from 3D, 2D and 1D density distributions. The evidence for the addition of Ni in the host lattice of Zn is realized. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. High-Temperature, Wirebondless, Ultra-Compact Wide Bandgap Power Semiconductor Modules for Space Power Systems, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Silicon carbide (SiC) and other wide band-gap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and...

  20. Quantum-dot temperature profiles during laser irradiation for semiconductor-doped glasses

    International Nuclear Information System (INIS)

    Nagpal, Swati

    2002-01-01

    Temperature profiles around laser irradiated CdX (X=S, Se, and Te) quantum dots in borosilicate glasses were theoretically modeled. Initially the quantum dots heat up rapidly, followed by a gradual increase of temperature. Also it is found that larger dots reach higher temperatures for the same pulse characteristics. After the pulse is turned off, the dots initially cool rapidly, followed by a gradual decrease in temperature

  1. Quantum-dot temperature profiles during laser irradiation for semiconductor-doped glasses

    Science.gov (United States)

    Nagpal, Swati

    2002-12-01

    Temperature profiles around laser irradiated CdX (X=S, Se, and Te) quantum dots in borosilicate glasses were theoretically modeled. Initially the quantum dots heat up rapidly, followed by a gradual increase of temperature. Also it is found that larger dots reach higher temperatures for the same pulse characteristics. After the pulse is turned off, the dots initially cool rapidly, followed by a gradual decrease in temperature.

  2. Lattice parameters of the Hg1-xFexSe and Cd1-xFexTe semimagnetic semiconductors

    International Nuclear Information System (INIS)

    Sarem, A.; Soulayman, S.

    2004-01-01

    Full text.Hg 1-x Fe x Se and Cd 1-x Fe x Te are members of a family of semiconducting alloys referred to as diluted magnetic semiconductors (DMS), i.e., ternary alloys whose lattice is made up in part of substitutional magnetic ions (in the present case, fe 2+ ). These materials are of considerable interest because, apart from the opportunities provided by the ternary nature of these compounds (e.g., tunability of the energy gap or the lattice constant), they display interesting magnetic properties as well as exchange interaction between the localized Fe 2+ moments and band electrons, resulting in a host of novel effects. In this paper we investigate the behavior of the crystal lattice of Hg 1-x Fe x Se and Cd 1-x Fe x Te, grown using modified Bridgman method. The purpose of the study is providing precise quantitative data for the lattice parameter as a function of x, which can then be used as a means of determining composition. The results of lattice parameter measurements on the ternary semiconductor alloys Hg 1-x Fe x Se over the range (0≤x≤0.15) and Cd 1-x Fe x Te in the range (0≤x≤0.03) are reports. Each sample was subjected to chemical analysis for determining the real concentration of iron. Here it was found that the differences between the nominal compositions and the real ones for all investigated samples are negligible. The powdered samples of Hg 1-x Fe x Se and Cd 1-x Fe x Te with different nominal compositions were studied using a DRON diffractometer with filtered Cο radiation (λ kα1 =1.78892A; λ kα2 =1.79278A). The diffraction patterns with a scan rate of 1 degree 2θ/min were taken. Precise measurements of the line position diffracted and extrapolation method to determine a to value θ=90 degree were made by Least Square Method. This method allowed determining cell parameters foe each sample with accuracy ±0.0001A. The crystal structure of these compounds was determined as a cubic one of the zinc blede type. The structural homogeneity of

  3. Current applications of semiconductor x-ray detectors in chemical analysis

    International Nuclear Information System (INIS)

    Whitehead, N.E.

    1975-07-01

    In the last few years, semiconductor detectors have been used as X-ray detectors with great success, and the routine rapid accumulation of X-ray spectra is now possible. This review surveys the historical development of the detectors, the utilisation, and relative merits of various means of exciting the X-radiation from the elements in the sample, and compares the technique with other methods claiming to offer the capability of simultaneous multi-element analysis. It is concluded that it is of average sensitivity, but offers some advantages from its non-destructive nature, and in some cases its ability to offer information about the spatial distribution of elements in a sample. Other types of analysis may also be possible simultaneously. Sample preparation techniques are reviewed, especially techniques of manufacturing thin samples. An appendix contains details of the very wide variety of samples which have been analysed. More than 350 references are included. (auth.)

  4. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    Energy Technology Data Exchange (ETDEWEB)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li [Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, P.O. Box 919-108, Mianyang 621900 (China)

    2014-09-15

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ∼40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  5. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches.

    Science.gov (United States)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-01

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ~40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  6. X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Hamad, Kimberly Sue [Univ. of California, Berkeley, CA (United States)

    2000-01-01

    Semiconductor nanocrystals are a system which has been the focus of interest due to their size dependent properties and their possible use in technological applications. Many chemical and physical properties vary systematically with the size of the nanocrystal and thus their study enables the investigation of scaling laws. Due to the increasing surface to volume ratio as size is decreased, the surfaces of nanocrystals are expected to have a large influence on their electronic, thermodynamic, and chemical behavior. In spite of their importance, nanocrystal surfaces are still relatively uncharacterized in terms of their structure, electronic properties, bonding, and reactivity. Investigation of nanocrystal surfaces is currently limited by what techniques to use, and which methods are suitable for nanocrystals is still being determined. This work presents experiments using x-ray and electronic spectroscopies to explore the structure, reactivity, and electronic properties of semiconductor (CdSe, InAs) nanocrystals and how they vary with size. Specifically, x-ray absorption near edge spectroscopy (XANES) in conjunction with multiple scattering simulations affords information about the structural disorder present at the surface of the nanocrystal. X-ray photoelectron spectroscopy (XPS) and ultra-violet photoelectron spectroscopy (UPS) probe the electronic structure in terms of hole screening, and also give information about band lineups when the nanocrystal is placed in electric contact with a substrate. XPS of the core levels of the nanocrystal as a function of photo-oxidation time yields kinetic data on the oxidation reaction occurring at the surface of the nanocrystal.

  7. Resonant inelastic scattering in dilute magnetic semiconductors by x-ray fluorescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lawniczak-Jablonska, K. [Lawrence Berkeley National Lab., CA (United States)]|[Institute of Physics, Warsaw (Poland); Jia, J.J.; Underwood, J.H. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    As modern, technologically important materials have become more complex, element specific techniques have become invaluable in studying the electronic structure of individual components from the system. Soft x-ray fluorescence (SXF) and absorption (SXA) spectroscopies provide a unique means of measuring element and angular momentum density of electron states, respectively, for the valence and conducting bands in complex materials. X-ray absorption and the decay through x-ray emission are generally assumed to be two independent one-photon processes. Recent studies, however have demonstrated that SXF excited near the absorption threshold generate an array of spectral features that depend on nature of materials, particularly on the localization of excited states in s and d-band solids and that these two processes can no be longer treated as independent. Resonant SXF offers thus the new way to study the dynamics of the distribution of electronic valence states in the presence of a hole which is bound to the electron low lying in the conduction band. This process can simulate the interaction between hole-electron pair in wide gap semiconductors. Therefore such studies can help in understanding of transport and optics phenomena in the wide gap semiconductors. The authors report the result of Mn and S L-resonant emission in Zn{sub 1{minus}x}Mn{sub x}S (with x=0.2 and 0.3) and MnS as the energy of exciting radiation is tuned across the Mn and S L{sub 3,2} absorption edge, along with the resonant excited spectra from elemental Mn as a reference.

  8. Strain Imaging of Nanoscale Semiconductor Heterostructures with X-Ray Bragg Projection Ptychography

    Science.gov (United States)

    Holt, Martin V.; Hruszkewycz, Stephan O.; Murray, Conal E.; Holt, Judson R.; Paskiewicz, Deborah M.; Fuoss, Paul H.

    2014-04-01

    We report the imaging of nanoscale distributions of lattice strain and rotation in complementary components of lithographically engineered epitaxial thin film semiconductor heterostructures using synchrotron x-ray Bragg projection ptychography (BPP). We introduce a new analysis method that enables lattice rotation and out-of-plane strain to be determined independently from a single BPP phase reconstruction, and we apply it to two laterally adjacent, multiaxially stressed materials in a prototype channel device. These results quantitatively agree with mechanical modeling and demonstrate the ability of BPP to map out-of-plane lattice dilatation, a parameter critical to the performance of electronic materials.

  9. Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors

    International Nuclear Information System (INIS)

    Allen, M. W.; Zemlyanov, D. Y.; Waterhouse, G. I. N.; Metson, J. B.; Veal, T. D.; McConville, C. F.; Durbin, S. M.

    2011-01-01

    Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al K α (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors.

  10. An Assessment of Critical Dimension Small Angle X-ray Scattering Metrology for Advanced Semiconductor Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Settens, Charles M. [State Univ. of New York (SUNY), Albany, NY (United States)

    2015-01-01

    Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty. Synchrotron critical dimension small angle X-ray scattering (CD-SAXS) has unique capabilities to non-destructively monitor the cross-section shape of surface structures with single nanometer uncertainty and can perform overlay metrology to sub-nm uncertainty. In this dissertation, we perform a systematic experimental investigation using CD-SAXS metrology on a hierarchy of semiconductor 3D device architectures including, high-aspect-ratio contact holes, H2 annealed Si fins, and a series of grating type samples at multiple points along a FinFET fabrication process increasing in structural intricacy and ending with fully fabricated FinFET. Comparative studies between CD-SAXS metrology and other relevant semiconductor dimensional metrologies, particularly CDSEM, CD-AFM and TEM are used to determine physical limits of CD-SAXS approach for advanced semiconductor samples. CD-SAXS experimental tradeoffs, advice for model-dependent analysis and thoughts on the compatibility with a semiconductor manufacturing environment are discussed.

  11. Photosensitive srtuctures on the basis of Pb1-xMnxTe semimagnetic semiconductors thin films

    International Nuclear Information System (INIS)

    Mehrabova, M.A.; Kerimova, T.I.; Memishova, R.M.; Nuriyev, I.R.; Ismayilov, T.G.

    2010-01-01

    Full text : Narrow-band semimagnetic semiconductors (SMS) Pb 1 -xMn x Te are unique materials for infrared optoelectronics. The investigation of Faraday effect in Pb 1 -xMn x Te thin films of SMS is of a special interest. So it can be used at the construction of optic isolators, amplifiers, IR detectors and other equipments. In the given work Pb 1 -xMn x Te thin films (SMS) have been produced, the interband Faraday effect in these semiconductors has been theoretically and experimentally studied. Opportunities of making IR detectors have been studied. Pb 1 -xMn x Te thin films have been grown at BaF 2 substrates by the method of molecular beam condensation. The optimal conditions of producing thin films with high crystallic perfection, electrophysical and optical parameters have been determined. The energy spectrum and wave functions have been theoretically calculated for quantum-sized films of Pb 1 -xMn x Te SMS in the case when the surface of the film is perpendicular to the axis X and the spin-spin exchange interaction occurs between the electrons in the conductivity band (valence band) and the electrons of half-filled d-shells of manganese ions as well as taking into account electron spins and the band nonparabolicity. For the calculation of the spectra and wave functions double-band Kane model has been used. On the basis of the found formulae an analytical equation has been found out for interband Faraday rotation (IFR) depending on the energy of the incident photon, band gap and the film thickness. It has been shown that by the decrease in the band gap the value of the IFR angle increases too. The formula of parabolic approximation has been also obtained. The dependence of IFR angle on photon energy, band gap and the film thickness has been built. It has been specified that the decrease of the film thickness leads to a strong increase of IFR angle. The contribution of nonparabolicity into IFR angle has been established, so taking into consideration the band

  12. Ab-initio calculations of Co-based diluted magnetic semiconductors Cd 1-xCoxX (X=S, Se, Te)

    KAUST Repository

    Saeed, Yasir

    2010-10-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic semiconductors composed of IIVI compounds Cd1-xCoxX (X=S, Se, Te) at x=0.25. From the calculated results of band structure and density of states, the half-metallic character and stability of ferromagnetic state for Cd1-xCoxS, Cd1-xCoxSe and Cd 1-xCoxTe alloys are determined. It is found that the tetrahedral crystal field gives rise to triple degeneracy t2g and double degeneracy eg. Furthermore, we predict the values of spin-exchange splitting energies Δx(d) and Δ x(p-d) and exchange constants N0α and N 0β produced by the Co 3d states. Calculated total magnetic moments and the robustness of half-metallicity of Cd1-xCo xX (X=S, Se, Te) with respect to the variation in lattice parameters are also discussed. We also extend our calculations to x=0.50, 0.75 for S compounds in order to observe the change due to increase in Co. © 2010 Elsevier B.V.

  13. Optical and magnetic resonance investigations of Zn1-x Mn x O magnetic semiconductors

    International Nuclear Information System (INIS)

    Zhang Huawei; Shi Erwei; Chen Zhizhan; Liu Xuechao; Xiao Bing; Song Lixin

    2006-01-01

    Zn 1- x Mn x O crystallites were synthesized by hydrothermal method. X-ray diffraction, UV-Vis absorption spectroscopy, and electron paramagnetic resonance (EPR) spectra confirm the substitution of Zn site by Mn 2+ ion. The nonmonotonic variation of band gap exhibits that the short-ranged interactions between the d electrons of Mn and the s and p electrons of the host bands are dominated at lower Mn concentration (x). EPR spectra show that Mn 2+ is in exchange interaction at higher x. By using a Curie-Weiss equation on the EPR data, it is found that the dominant magnetic property is antiferromagnetic for higher x, and paramagnetic for lower x

  14. Penta-P2X (X=C, Si) monolayers as wide-bandgap semiconductors: A first principles prediction

    Science.gov (United States)

    Naseri, Mosayeb; Lin, Shiru; Jalilian, Jaafar; Gu, Jinxing; Chen, Zhongfang

    2018-06-01

    By means of density functional theory computations, we predicted two novel two-dimensional (2D) nanomaterials, namely P2X (X=C, Si) monolayers with pentagonal configurations. Their structures, stabilities, intrinsic electronic, and optical properties as well as the effect of external strain to the electronic properties have been systematically examined. Our computations showed that these P2C and P2Si monolayers have rather high thermodynamic, kinetic, and thermal stabilities, and are indirect semiconductors with wide bandgaps (2.76 eV and 2.69 eV, respectively) which can be tuned by an external strain. These monolayers exhibit high absorptions in the UV region, but behave as almost transparent layers for visible light in the electromagnetic spectrum. Their high stabilities and exceptional electronic and optical properties suggest them as promising candidates for future applications in UV-light shielding and antireflection layers in solar cells.

  15. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Xiao, E-mail: xiao.shen@vanderbilt.edu [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States); Pantelides, Sokrates T. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2015-04-06

    MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

  16. Temperature controlled infrared broadband cloaking with the bilayer coatings of semiconductor and superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaohua [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); College of Physics and Electronics, Yancheng Teachers University, Yancheng 224051 (China); Liu, Youwen, E-mail: ywliu@nuaa.edu.cn [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Feng, Yuncai [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

    2015-06-15

    Highlights: • We first propose that the cloak is composed of the bilayer of semiconductor and superconductor. • We realize the infrared broadband cloaking based on the scattering cancellation method. • The cloaking frequency can be tuned by external temperature. - Abstract: The infrared broadband tunable cloaking have been proposed and investigated with the bilayer coating materials of semiconductor (n-Ge) and high-temperature superconductor (YBa{sub 2}Cu{sub 3}O{sub 7}), whose cloaking frequency can be controlled by external temperature. The analytical solution is derived based on the scattering cancellation cloaking technique from the Mie scattering theory, and the full-wave numerical simulation is performed by the finite element method. The calculated and simulated results have demonstrated that this invisibility cloak may reduce the total scattering cross section of the composite structure of 90% over a broad frequency band of nearly 20 THz, and the infrared cloaking frequency can be tuned by the external temperature. It can provide a feasible way to design a broadband tunable cloak.

  17. Semiconductor resistance thermometer for the temperature range 300-0.3 K

    International Nuclear Information System (INIS)

    Zinov'eva, K.N.; Zarubin, L.I.; Nemish, I.Yu.; Vorobkalo, F.M.; Boldarev, S.T.; AN Ukrainskoj SSR, Kiev. Inst. Poluprovodnikov)

    1979-01-01

    Thermometric characteristics of semiconductor resistor thermometers for the temperature range from 300 to 0.3 K and from 77 to 0.3 K are given. Temperature dependence of thermometer resistances in the 300-1.3 K range was measured in cryostats with pumping-out of N 2 , H 2 and 4 He. For measurements below 1.3 K use was made of a 3 H- 4 He dissolving cryostat. The accuracy of measuring temperatures in the 1.3-0.3 K range is not below +-0.003 K, the error in determining thermometer resistances does not exceed 1%. The analysis of obtained thermometric characteristics of several series of semiconductor resistance thermometers showed that observed insignificant spread of resistances of thermometers in one series and identity of characteristics allows them to be used without preliminary calibration for relatively coarse measurements in the range from 3O0 to 0.3 K. Besides, it has been found that in the 4.2-0.3 K range the thermometric characteristics represent a straight line in the lgR-Tsup(-n) coordinates, where R is the thermometer resistance, T is the temperature and n=0.5. Thus, the thermometers of the same series can be calibrated only in 2 or 3 reference point measurements

  18. Structural investigation of semi-conductor nanostructures by x-ray diffraction

    International Nuclear Information System (INIS)

    Stangl, J.

    2003-01-01

    Full text: Semiconductor nanostructures present a topic of increasing interest due to their potential for new device concepts, as well as from a scientific point of view. In structures with dimensions smaller than the DeBroglie wavelength of electrons or holes, quantum confinement effects determine the electronic and optical properties. For the understanding of such structures, their structural investigation, i.e., the determination of size, shape, chemical composition and strain state is mandatory. X-ray diffraction is a powerful technique for this purpose. In particular, the strain fields within nanostructures as well as in the surrounding matrix can be determined with high precision. Using synchrotron radiation sources, also the distribution of chemical composition within objects with typically several nm height and 10 to 100 nm width can be established. With x-ray diffraction, the non-destructive investigation of uncapped and buried structures is possible. The latter is important, as for applications buried structures are needed, and during capping the structural properties may change considerably. Here, we will focus on so-called self-assembled nanostructures, which form during the deposition of different semiconductors on top of each other. In contrast to structures etched after growth of planar layers, self organized islands or wires are virtually defect-free and hence promising for applications. Different scattering techniques sensitive to shape and/or composition and strain will be discussed. (author)

  19. High-temperature x-ray camera

    Energy Technology Data Exchange (ETDEWEB)

    Il' inskii, A G; Romanova, A V; Prikhod' ko, N P

    1974-03-25

    A high-temperature x-ray chamber for taking x-ray photographs of flat horizontally set samples in a vacuum or gas medium is described. The chamber is fitted out with a water-cooled vacuum closed hull with a window letting the x-rays pass, a centering mechanism and a device for heating the samples. To widen its functional abilities the chamber is provided with a goniometric device, fixed immovably to the body foundation by means of two stands. Bearings are mounted to the stands; one of them is equipped with a screw wheel and an endless screw with a limb in the ring; a traverse to which a counter for the x-ray radiation is installed is attached to the shafts of both the bearings. The centering mechanism has a cooled metalic rod, which is connected through a spiral screw thread with the limb fixable by a fork. The position of the shaft of rotation of the counter is adjusted with the help of a nit, extended through the plug openings, positioned on the stands. The chamber can be applied for x-ray structural analyses.

  20. Structural characterization of the high-temperature modification of the Cu_2ZnGeTe_4 quaternary semiconductor compound

    International Nuclear Information System (INIS)

    Nieves, L.; Marcano, G.; Power, C.; Rincon, C.; Delgado, G.E.; Lopez-Rivera, S.A.

    2016-01-01

    A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu_2ZnGeTe_4 quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm"-"1 have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm"-"1 tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this high-temperature modification of ZnTe and Cu_2GeTe_3 secondary phases has been detected by both XRD and Raman spectroscopy. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Temperature dependent electrical characterisation of Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, Arjun, E-mail: arjun@ece.iisc.ernet.in; Vinoy, K. J. [Electrical Communication Engineering, Indian Institute of Science, Bangalore, India 560012 (India); Roul, Basanta; Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore, India 560012 (India)

    2015-09-15

    This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO{sub 2} (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO{sub 2}/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO{sub 2}/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights.

  2. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  3. Effect of temperature-dependent energy-level shifts on a semiconductor's Peltier heat

    International Nuclear Information System (INIS)

    Emin, D.

    1984-01-01

    The Peltier heat of a charge carrier in a semiconductor is calculated for the situation in which the electronic energy levels are temperature dependent. The temperature dependences of the electronic energy levels, generally observed optically, arise from their dependences on the vibrational energy of the lattice (e.g., as caused by thermal expansion). It has been suggested that these temperature dependences will typically have a major effect on the Peltier heat. The Peltier heat associated with a given energy level is a thermodynamic quantity; it is the product of the temperature and the change of the entropy of the system when a carrier is added in that level. As such, the energy levels cannot be treated as explicitly temperature dependent. The electron-lattice interaction causing the temperature dependence must be expressly considered. It is found that the carrier's interaction with the atomic vibrations lowers its electronic energy. However, the interaction of the carrier with the atomic vibrations also causes an infinitesimal lowering (approx.1/N) of each of the N vibrational frequencies. As a result, there is a finite carrier-induced increase in the average vibrational energy. Above the Debye temperature, this cancels the lowering of the carrier's electronic energy. Thus, the standard Peltier-heat formula, whose derivation generally ignores the temperature dependence of the electronic energy levels, is regained. This explains the apparent success of the standard formula in numerous analyses of electronic transport experiments

  4. Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

    International Nuclear Information System (INIS)

    Moreschini, L.; Autès, G.; Crepaldi, A.; Moser, S.; Johannsen, J.C.; Kim, K.S.; Berger, H.; Bugnon, Ph.; Magrez, A.; Denlinger, J.; Rotenberg, E.; Bostwick, A.; Yazyev, O.V.

    2015-01-01

    Highlights: • We provide an ARPES comparison between the three tellurohalides BiTeX (X = I, Br, Cl). • They present a similar band structure with namely spin-split bulk and surface states. • They offer, except for BiTeCl, the possibility of ambipolar conduction. • They can be easily doped. • From the data appeared so far, BiTeBr may be the most appealing for applications. - Abstract: We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work

  5. Influence of backscattering on the spatial resolution of semiconductor X-ray detectors

    International Nuclear Information System (INIS)

    Hoheisel, M.; Korn, A.; Giersch, J.

    2005-01-01

    Pixelated X-ray detectors using semiconductor layers or scintillators as absorbers are widely used in high-energy physics, medical diagnosis, or non-destructive testing. Their good spatial resolution performance makes them particularly suitable for applications where fine details have to be resolved. Intrinsic limitations of the spatial resolution have been studied in previous simulations. These simulations focused on interactions inside the conversion layer. Transmitted photons were treated as a loss. In this work, we also implemented the structure behind the conversion layer to investigate the impact of backscattering inside the detector setup. We performed Monte Carlo simulations with the program ROSI (Roentgen Simulation) which is based on the well-established EGS4 algorithm. Line-spread functions of different fully implemented detectors were simulated. In order to characterize the detectors' spatial resolution, the modulation transfer functions (MTF) were calculated. The additional broadening of the line-spread function by carrier transport has been ignored in this work. We investigated two different detector types: a directly absorbing pixel detector where a semiconductor slab is bump-bonded to a readout ASIC such as the Medipix-2 setup with Si or GaAs as an absorbing semiconductor layer, and flat-panel detectors with a Se or a CsI converter. We found a significant degradation of the MTF compared to the case without backscattering. At energies above the K-edge of the backscattering material the spatial resolution drops and can account for the observed low-frequency drop of the MTF. Ignoring this backscatter effect might lead to misinterpretations of the charge sharing effect in counting pixel detectors

  6. X-Ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Kim, Hyun Jung (Inventor); Skuza, Jonathan R. (Inventor); Lee, Kunik (Inventor); King, Glen C. (Inventor); Choi, Sang Hyouk (Inventor)

    2017-01-01

    An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

  7. PHOTOSENSITIVE STRUCTURES ON THE BASIS OF THIN FILMS OF SEMIMAGNETIC SEMICONDUCTORS Pb1-x Mnx Te

    International Nuclear Information System (INIS)

    Mehrabova, M.A; Nuriyev, I.R; Ismayilov, T.G; Kerimova, T.I; Mamishova, R.M

    2011-01-01

    Full text: Narrow-band semimagnetic semiconductors (SMS) Pb1-xMnxTe are unique materials for infrared (IR) optoelectronics.The investigation of Faraday effect in Pb1-xMnxTe thin films of SMS is of a special interest. So it can be used at the construction of optic isolators, amplifiers, IR detectors and other equipments.In the given work Pb1-xMnxTe thin films (SMS) have been produced, the interband Faraday effect in these semiconductors has been theoretically and experimentally studied. Opportunities of making IR detectors have been studied. Pb1-xMnxTe (x=0.005 0.06) thin films have been grown at BaF2 substrates by the method of molecular beam condensation. The optimal conditions of producing thin films with high crystallic perfection, electrophysical and optical parameters have been determined [1]. The energy spectrum and wave functions have been theoretically calculated for quantum-sized films of Pb1-xMnxTe SMS in the case when the surface of the film is perpendicular to the axis X and the spin-spin exchange interaction occurs between the electrons in the conductivity band (valence band) and the electrons of half-filled d-shells of manganese ions as well as taking into account electron spins and the band nonparabolicity. For the calculation of the spectra and wave functions double-band Kane model has been used. On the basis of the found formulae an analytical equation has been found out for interband Faraday rotation (IFR) depending on the energy of the incident photon, band gap and the film thickness. It has been shown that by the decrease in the band gap the value of the IFR angle increases too [2]. The formula of parabolic approximation has been also obtained. The dependence of IFR angle on photon energy, band gap and the film thickness has been built. It has been specified that the decrease of the film thickness leads to a strong increase of IFR angle. The contribution of nonparabolicity into IFR angle has been established, so taking into consideration the

  8. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  9. Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

    Science.gov (United States)

    Vasquez, Richard P. (Inventor); Hunt, Brian D. (Inventor); Foote, Marc C. (Inventor)

    1994-01-01

    Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

  10. Temperature Dependence of Charge Localization in High-Mobility, Solution-Crystallized Small Molecule Semiconductors Studied by Charge Modulation Spectroscopy

    DEFF Research Database (Denmark)

    Meneau, Aurélie Y. B.; Olivier, Yoann; Backlund, Tomas

    2016-01-01

    In solution-processable small molecule semiconductors, the extent of charge carrier wavefunction localization induced by dynamic disorder can be probed spectroscopically as a function of temperature using charge modulation spectroscopy (CMS). Here, it is shown based on combined fi eld-effect tran......In solution-processable small molecule semiconductors, the extent of charge carrier wavefunction localization induced by dynamic disorder can be probed spectroscopically as a function of temperature using charge modulation spectroscopy (CMS). Here, it is shown based on combined fi eld......-effect transistor and CMS measurements as a function of temperature that in certain molecular semiconductors, such as solution-processible pentacene, charge carriers become trapped at low temperatures in environments in which the charges become highly localized on individual molecules, while in some other molecules...

  11. Ion-induced nanopatterns on semiconductor surfaces investigated by grazing incidence x-ray scattering techniques

    Energy Technology Data Exchange (ETDEWEB)

    Carbone, D; Metzger, T H [ID01, ESRF, 6 rue Jules Horowitz, F-38043 Grenoble Cedex (France); Biermanns, A; Pietsch, U [Festkoerperphysik, Universitaet Siegen, D-57068 Siegen (Germany); Ziberi, B; Frost, F [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., D-04318 Leipzig (Germany); Plantevin, O [Universite Paris-Sud, Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR 8609, F-91405 Orsay (France)], E-mail: gcarbone@esrf.fr

    2009-06-03

    In this review we cover and describe the application of grazing incidence x-ray scattering techniques to study and characterize nanopattern formation on semiconductor surfaces by ion beam erosion under various conditions. It is demonstrated that x-rays under grazing incidence are especially well suited to characterize (sub)surface structures on the nanoscale with high spatial and statistical accuracy. The corresponding theory and data evaluation is described in the distorted wave Born approximation. Both ex situ and in situ studies are presented, performed with the use of a specially designed sputtering chamber which allows us to follow the temporal evolution of the nanostructure formation. Corresponding results show a general stabilization of the ordering wavelength and the extension of the ordering as a function of the ion energy and fluence as predicted by theory. The in situ measurements are especially suited to study the early stages of pattern formation, which in some cases reveal a transition from dot to ripple formation. For the case of medium energy ions crystalline ripples are formed buried under a semi-amorphous thick layer with a ripple structure at the surface being conformal with the crystalline/amorphous interface. Here, the x-ray techniques are especially advantageous since they are non-destructive and bulk-sensitive by their very nature. In addition, the GI x-ray techniques described in this review are a unique tool to study the evolving strain, a topic which remains to be explored both experimentally and theoretically.

  12. In situ synchrotron X-ray studies during metal-organic chemical vapor deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, Carol [Northern Illinois Univ., DeKalb, IL (United States); Argonne National Lab., Argonne, IL (United States); Highland, Matthew J.; Perret, Edith; Fuoss, Paul H.; Streiffer, Stephen K.; Stephenson, G. Brian [Argonne National Lab., Argonne, IL (United States); Richard, Marie-Ingrid [Universite Paul Cezanne Aix-Marseille, Marseille (France)

    2012-07-01

    In-situ, time-resolved techniques provide valuable insight into the complex interplay of surface structural and chemical evolution occurring during materials synthesis and processing of semiconductors. Our approach is to observe the evolution of surface structure and morphology at the atomic scale in real-time during metal organic vapor phase deposition (MOCVD) by using grazing incidence x-ray scattering and X-ray fluorescence, coupled with visible light scattering. Our vertical-flow MOCVD chamber is mounted on a 'z-axis' surface diffractometer designed specifically for these studies of the film growth, surface evolution and the interactions within a controlled growth environment. These techniques combine the ability of X-rays to penetrate a complex environment for measurements during growth and processing, with the sensitivity of surface scattering techniques to atomic and nanoscale structure. In this talk, we outline our program and discuss examples from our in-situ and real-time X-ray diffraction and fluorescence studies of InN, GaN, and InGaN growth on GaN(0001).

  13. Inelastic X-ray scattering experiments at extreme conditions: high temperatures and high pressures

    Directory of Open Access Journals (Sweden)

    S.Hosokawa

    2008-03-01

    Full Text Available In this article, we review the present status of experimental techniques under extreme conditions of high temperature and high pressure used for inelastic X-ray scattering (IXS experiments of liquid metals, semiconductors, molten salts, molecular liquids, and supercritical water and methanol. For high temperature experiments, some types of single-crystal sapphire cells were designed depending on the temperature of interest and the sample thickness for the X-ray transmission. Single-crystal diamond X-ray windows attached to the externally heated high-pressure vessel were used for the IXS experiment of supercritical water and methanol. Some typical experimental results are also given, and the perspective of IXS technique under extreme conditions is discussed.

  14. NMR and computational study of Ba{sub 8}Cu{sub x}Ge{sub 46-x} clathrate semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jing-Han, E-mail: jhchen@tamu.edu; Sirusi Arvij, Ali; Zheng, Xiang; Rodriguez, Sergio Y.; Ross, Joseph H.

    2014-04-01

    Highlights: • Quadrupole NMR with first-principles calculations probes local site preferences. • Cu/Ge ratio is clarified vs. the ideal Zintl composition. • Modified Becke–Johnson exchange potential agrees well with NMR Knight shifts. - Abstract: Ba{sub 8}Cu{sub x}Ge{sub 46-x} is a type-I clathrate material that forms as a semiconductor in a narrow composition range corresponding to the electron-balanced Zintl composition, with x = 5.3. We use NMR spectroscopy combined with ab initio electronic structure calculations to probe the electronic and structural behavior of these materials. Computational results based on a superstructure model for the atomic configuration of the alloy provide good agreement with the electric quadrupole-broadened NMR lineshapes. Modeling using the modified Becke–Johnson (TB-mBJ) exchange potential is also shown to agree well with experimental NMR Knight shifts. The results indicate that the Cu–Ge balance is the main factor determining the carrier density, within a narrow stability range near the ideal Zintl composition.

  15. Biaxial stress driven tetragonal symmetry breaking and high-temperature ferromagnetic semiconductor from half-metallic CrO2

    Science.gov (United States)

    Xiao, Xiang-Bo; Liu, Bang-Gui

    2018-03-01

    It is highly desirable to combine the full spin polarization of carriers with modern semiconductor technology for spintronic applications. For this purpose, one needs good crystalline ferromagnetic (or ferrimagnetic) semiconductors with high Curie temperatures. Rutile CrO2 is a half-metallic spintronic material with Curie temperature 394 K and can have nearly full spin polarization at room temperature. Here, we find through first-principles investigation that when a biaxial compressive stress is applied on rutile CrO2, the density of states at the Fermi level decreases with the in-plane compressive strain, there is a structural phase transition to an orthorhombic phase at the strain of -5.6 % , and then appears an electronic phase transition to a semiconductor phase at -6.1 % . Further analysis shows that this structural transition, accompanying the tetragonal symmetry breaking, is induced by the stress-driven distortion and rotation of the oxygen octahedron of Cr, and the half-metal-semiconductor transition originates from the enhancement of the crystal field splitting due to the structural change. Importantly, our systematic total-energy comparison indicates the ferromagnetic Curie temperature remains almost independent of the strain, near 400 K. This biaxial stress can be realized by applying biaxial pressure or growing the CrO2 epitaxially on appropriate substrates. These results should be useful for realizing full (100%) spin polarization of controllable carriers as one uses in modern semiconductor technology.

  16. NMR and computational study of Ba8CuxGe46-x clathrate semiconductors

    International Nuclear Information System (INIS)

    Chen, Jing-Han; Sirusi Arvij, Ali; Zheng, Xiang; Rodriguez, Sergio Y.; Ross, Joseph H.

    2014-01-01

    Highlights: • Quadrupole NMR with first-principles calculations probes local site preferences. • Cu/Ge ratio is clarified vs. the ideal Zintl composition. • Modified Becke–Johnson exchange potential agrees well with NMR Knight shifts. - Abstract: Ba 8 Cu x Ge 46-x is a type-I clathrate material that forms as a semiconductor in a narrow composition range corresponding to the electron-balanced Zintl composition, with x = 5.3. We use NMR spectroscopy combined with ab initio electronic structure calculations to probe the electronic and structural behavior of these materials. Computational results based on a superstructure model for the atomic configuration of the alloy provide good agreement with the electric quadrupole-broadened NMR lineshapes. Modeling using the modified Becke–Johnson (TB-mBJ) exchange potential is also shown to agree well with experimental NMR Knight shifts. The results indicate that the Cu–Ge balance is the main factor determining the carrier density, within a narrow stability range near the ideal Zintl composition

  17. X-ray photoemission electron microscopy for the study of semiconductor materials

    International Nuclear Information System (INIS)

    Anders, Simone; Stammler, Thomas; Padmore, Howard A.; Terminello, Louis J.; Jankowski, Alan F.; Stoehr, Joachim; Diaz, Javier; Cossy-Favre, Aline; Singh, Sangeet

    1998-01-01

    Photoemission Electron Microscopy using X-rays (X-PEEM) is a novel combination of two established materials analysis techniques--PEEM using UV light, and Near Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy. This combination allows the study of elemental composition and bonding structure of the sample by NEXAFS spectroscopy with a high spatial resolution given by the microscope. A simple, two lens, 10 kV operation voltage PEEM has been used at the Stanford Synchrotron Radiation Laboratory and at the Advanced Light Source (ALS) in Berkeley to study various problems including materials of interest for the semiconductor industry. In the present paper we give a short overview over the method and the instrument which was used, and describe in detail a number of applications. These applications include the study of the different phases of titanium disilicide, various phases of boron nitride, and the analysis of small particles. A brief outlook is given on possible new fields of application of the PEEM technique, and the development of new PEEM instruments

  18. Ternary thiophene-X-thiophene semiconductor building blocks (X = fluorene, carbazole, phenothiazine): Modulating electronic properties and electropolymerization ability by tuning the X core

    Energy Technology Data Exchange (ETDEWEB)

    Tacca, Alessandra, E-mail: alessandra.tacca@eni.com [Centro Ricerche per le Energie non Convenzionali, Istituto ENI Donegani, ENI S.p.A., Via G. Fauser 4, 28100 Novara (Italy); Po, Riccardo; Caldararo, Maria; Chiaberge, Stefano; Gila, Liliana; Longo, Luca [Centro Ricerche per le Energie non Convenzionali, Istituto ENI Donegani, ENI S.p.A., Via G. Fauser 4, 28100 Novara (Italy); Mussini, Patrizia Romana [Dipartimento di Chimica Fisica ed Elettrochimica, Universita degli Studi di Milano, Via Golgi 19, 20133 Milano (Italy); Pellegrino, Andrea; Perin, Nicola; Salvalaggio, Mario; Savoini, Alberto; Spera, Silvia [Centro Ricerche per le Energie non Convenzionali, Istituto ENI Donegani, ENI S.p.A., Via G. Fauser 4, 28100 Novara (Italy)

    2011-07-30

    Highlights: > Effect of aromatic core on electronic properties in thiophene-X-thiophene trimers. > The lower the electron richness of X core, the deeper the HOMO level. > Different thiophene positions on X lead to kinked structure with lower conjugation. > The fluorene structure exhibits the lowest Stokes shift and the highest quantum yield. > The corresponding polymers obtained through three routes were studied. - Abstract: To achieve rationalization criteria for target-oriented molecular design of Th-X-Th (Th = thiophene) semiconductor building blocks, we have carried out an extensive investigation on the effects of the X core (X = fluorene, carbazole or phenothiazine) on the electronic properties and polymerization ability of Th-X-Th monomers and on the electronic and structural properties of the corresponding periodic conducting polymers -(Th-X-Th){sub n}-, obtained by electropolymerization and, for comparison's sake, by FeCl{sub 3}-catalyzed polymerization and/or Suzuki coupling. The effects of molecule bending and of solubilising bulky alkyl substituents have also been considered. The systematic, exhaustive template sequence combined with a rigorous, multitechnique investigation protocol affords a unique data library and a complete set of reliable interpretative/predictive guidelines.

  19. Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

    Science.gov (United States)

    Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

    2016-02-10

    Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

  20. Colossal change in thermopower with temperature-driven p-n-type conduction switching in La x Sr2-x TiFeO6 double perovskites

    Science.gov (United States)

    Roy, Pinku; Maiti, Tanmoy

    2018-02-01

    Double perovskite materials have been studied in detail by many researchers, as their magnetic and electronic properties can be controlled by the substitution of alkaline earth metals or lanthanides in the A site and transition metals in the B site. Here we report the temperature-driven, p-n-type conduction switching assisted, large change in thermopower in La3+-doped Sr2TiFeO6-based double perovskites. Stoichiometric compositions of La x Sr2-x TiFeO6 (LSTF) with 0  ⩽  x  ⩽  0.25 were synthesized by the solid-state reaction method. Rietveld refinement of room-temperature XRD data confirmed a single-phase solid solution with cubic crystal structure and Pm\\bar{3}m space group. From temperature-dependent electrical conductivity and Seebeck coefficient (S) studies it is evident that all the compositions underwent an intermediate semiconductor-to-metal transition before the semiconductor phase reappeared at higher temperature. In the process of semiconductor-metal-semiconductor transition, LSTF compositions demonstrated temperature-driven p-n-type conduction switching behavior. The electronic restructuring which occurs due to the intermediate metallic phase between semiconductor phases leads to the colossal change in S for LSTF oxides. The maximum drop in thermopower (ΔS ~ 2516 µV K-1) was observed for LSTF with x  =  0.1 composition. Owing to their enormous change in thermopower of the order of millivolts per kelvin, integrated with p-n-type resistance switching, these double perovskites can be used for various high-temperature multifunctional device applications such as diodes, sensors, switches, thermistors, thyristors, thermal runaway monitors etc. Furthermore, the conduction mechanisms of these oxides were explained by the small polaron hopping model.

  1. Room-temperature luminescence decay of colloidal semiconductor quantum dots: Nonexponentiality revisited

    Energy Technology Data Exchange (ETDEWEB)

    Bodunov, Evgeny N. [Department of Physics, Petersburg State Transport University, St. Petersburg (Russian Federation); Danilov, Vladimir V. [Department of Physics, Petersburg State Transport University, St. Petersburg (Russian Federation); Vavilov State Optical Institute, St. Petersburg (Russian Federation); Panfutova, Anastasia S. [Vavilov State Optical Institute, St. Petersburg (Russian Federation); Simoes Gamboa, A.L. [Center of Information Optical Technologies, ITMO University, St. Petersburg (Russian Federation)

    2016-04-15

    While time-resolved luminescence spectroscopy is commonly used as a quantitative tool for the analysis of the dynamics of photoexcitation in colloidal semiconductor quantum dots, the interpretation of the virtually ubiquitous nonexponential decay profiles is frequently ambiguous, because the assumption of multiple discrete exponential components with distinct lifetimes for resolving the decays is often arbitrary. Here, an interpretation of the room-temperature luminescence decay of CdSe/ZnS semiconductor quantum dots in colloidal solutions is presented based on the Kohlrausch relaxation function. It is proposed that the decay can be understood by using the concept of Foerster resonance energy transfer (FRET) assuming that the role of acceptors of photoexcitation energy is played by high-frequency anharmonic molecular vibrations in the environment of the quantum dots. The term EVFRET (Electronic - Vibrational Foerster Resonance Energy Transfer) is introduced in order to unequivocally refer to this energy transfer process. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Effective temperature of the non-equilibrium electrons in a degenerate semiconductor at low lattice temperature

    Energy Technology Data Exchange (ETDEWEB)

    Das, B.; Basu, A.; Das, J.; Bhattacharya, D.P., E-mail: d_p_bhattacharya@rediffmail.com

    2015-10-01

    The energy balance equation for the electron–phonon system is recast taking the degeneracy of the carrier ensemble into account. The effect of degeneracy on the field dependence of the temperature of the non-equilibrium carriers has been studied by solving the same equation. The high field distribution function of the carriers is assumed to be given by the Fermi Dirac function at the field dependent carrier temperature. The distribution function has been approximated in a way that facilitates analytical solution of the problem without any serious loss of accuracy. The field dependence of the electron temperature thus obtained seems to be significantly different from what follows had the degeneracy not been taken into account. The agreement of the results obtained from the present analysis with the available experimental data for Ge and InSb are quite satisfactory. The scope of further refinement of the present theory is highlighted.

  3. CDZNTE ROOM-TEMPERATURE SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NATIONAL-SECURITY APPLICATIONS.

    Energy Technology Data Exchange (ETDEWEB)

    CAMARDA,G.S.; BOLOTNIKOV, A.E.; CUI, Y.; HOSSAIN, A.; KOHMAN, K.T.; JAMES, R.B.

    2007-05-04

    One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance.

  4. Temperature dependence of dark current of pSi-n(Si2)1-x(CdS)x structures

    International Nuclear Information System (INIS)

    Usmonov, Sh.N.

    2007-01-01

    Full text: The research of influence of isovalent impurity on electric and photo-electric properties of semiconductors where formative with semiconductor continuous solid solutions (CSS) of substitution presents both the fundamental and the applied application interest at the area of material science and photoelectrical properties of semiconductors. In the given work results of experimental researches (Si 2 ) 1-x (CdS) x epitaxial layers grown on c-Si substrates by a method liquid phase epitaxy are presented. The grown layers had thickness and ∼ 10 micron, n-type of conductivity with specific resistance 0,016 Ohm sm. Dependences of the dark current of pSi-n(Si 2 ) 1-x (CdS) x structures have been investigated at various values of a bias voltage. In experiment it was observed anomaly dependence of current. The current with arising of temperature begun monotonously aroused and reached some minimal value at temperature 100 C and then again starts to arise up to temperature 200 C. Arising of dark current is caused of the band-to-band thermal generation of electron-hole pairs. The voltage drop at the temperature 100 C is caused by the recharging of impurity atoms CdS. It is known, that width of the forbidden band of CdS Eg,CdS=2,48 eV more than Eg,Si=1,1 eV. Covalent bond of atoms CdS is stronger than Si-Si bond. However, when the molecule of CdS replaces two atoms of silicon in tetrahedral lattice of silicon the bonds of Cd-S become weak under influence of surrounding atoms of silicon. It causes to occurrence impurity level CdS located on Ei=1,2 eV below a valence band top of silicon. The generation of electron-hole pairs with participation of CdS impurities at the 100 C temperature is occurred under action thermal phonons. However, holes formed on impurity levels are localized and they will be recombination centers. Therefore drop of the dark current caused by dispersion of carriers on impurity centers. (authors)

  5. Spin injection into semiconductors: the role of Fe/AlxGa1-xAs interface

    International Nuclear Information System (INIS)

    Fitzsimmons, M.R.; Park, S.

    2004-01-01

    The influence of the growth and post-growth annealing temperatures of Fe/Al x Ga 1-x As-based spin light-emitting diodes (LEDs) on the spin injection efficiency is discussed. The extent of interfacial reactions during molecular beam epitaxial growth of Fe on GaAs was determined from in-situ x-ray photoelectron spectroscopy studies. The Fe/GaAs interface results in ≤ 3 monolayers of reaction for Fe grown at -15 C. Intermediate growth temperatures (95 C) lead to ∼5 monolayers of interfacial reactions, and high growth temperatures of 175 C lead to a ∼9 monolayer thick reacted layer. Polarized neutron reflectivity was used to determine the interfacial magnetic properties of epitaxial Fe 0.5 Co 0.5 /GaAs heterostructures grown under identical conditions. No interfacial magnetic dead layer is detected at the interface for Fe 0.5 Co 0.5 films grown at -15 C, an ∼6 (angstrom) thick nonmagnetic layer formed at the interface for 95 C growth and an ∼5 (angstrom) thick magnetic interfacial reacted layer formed for growth at 175 C. Spin injection from Fe contacts into spin LEDs decreases sharply when reactions result in a nonmagnetic interfacial layer. Significant spin injection signals are obtained from Fe contacts grown between -5 C and 175 C, although the higher Fe growth temperatures resulted in a change in the sign of the spin polarization. Post-growth annealing of the spin LEDs is found to increase spin injection efficiency for low Fe growth temperatures and to a sign reversal of the spin polarization for high growth temperature (175 C). An effective Schottky barrier height increase indicates that post growth annealing modifies the Fe/Al x Ga 1-x As interface.

  6. Permittivity and soft mode in narrow-gap Pbsub(1-x)Snsub(x)Te(x<0.35) semiconductors

    International Nuclear Information System (INIS)

    Antkiv, Z.P.; Baginskij, V.M.; Tovstyuk, K.D.

    1979-01-01

    Presented are the results of theoretical studies of the effect of carrier concentration and composition X on static dielectric function and the frequency of transverse optical phonon in solid Pbsub(1-x)Snsub(x)Te solutions. It is shown that to calculate the dependence of the frequency of transverse phonon mode and the width of forbidden zone on solid solution composition and concentration it is sufficient to limit oneself to the simplest approximation for polarization operator, optical deformation potential being chosen as an adjusting parameter. The results of calculations are compared with available experimental data

  7. The dependence of magnetic ordering temperature in amorphous semiconductors on paramagnetic centre concentration

    International Nuclear Information System (INIS)

    Khokhlov, A.F.; Mashin, A.I.; Satanin, A.M.

    1981-01-01

    In silicon amorphized by ion implantation (a-Si) the dependence of magnetic ordering temperature (theta) on localized spin concentration (Nsub(s)) is studied by EPR method. Nsub(s) changes by varying the Ne + ion dose from 6x10 14 to 2x10 17 cm -2 and sample annealing. From the comparison of the data obtained with literature ones conclusions are made about the existence of two critical values of Nsub(s) in a-Si (approximately 10 19 and approximately 2x10 20 cm -3 ), when a transition occurs from paramagnetism to antiferromagnetism (at T < theta) and from antiferromagnetism to ferromagnetism, respectively. (author)

  8. Dielectric Properties of Cd1-xZnxSe Thin Film Semiconductors

    International Nuclear Information System (INIS)

    Wahab, L.A.; Farrag, A.A.; Zayed, H.A.

    2012-01-01

    Cd 1-x Zn x Se (x=0, 0.5 and 1) thin films of thickness 300 nm have been deposited on highly cleaned glass substrates (Soda-lime glass) by thermal evaporation technique under pressure 10-5 Torr. The crystal structure, lattice parameters and grain size were determined from X-ray diffraction patterns of these films. The dielectric response and ac conductivity of the films are investigated in the frequency range from 80 Hz to 5 MHz and temperature range from 300 K to 420 K. AC conductivity increases linearly with the frequency according to the power relation σ a c (ψ)=A (ψ) s . The dielectric constant and loss show low values at high frequencies. The relaxation time t, resistance R and capacitance C were calculated from Nyquist diagram. The behavior can be modeled by an equivalent parallel RC circuit.

  9. (Sr{sub 1-x}Na{sub x})(Cd{sub 1-x}Mn{sub x}){sub 2}As{sub 2}: A new charge and spin doping decoupled diluted magnetic semiconductors with CaAl{sub 2}Si{sub 2}-type structure

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Zhao, Guoqiang; Yu, Shuang; Wang, Xiancheng; Liu, Qingqing [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Li, Zhi [School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009 (China); Jin, Changqing, E-mail: Jin@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-08-28

    We report the synthesis and characterization of a new bulk diluted ferromagnetic semiconductor via Na and Mn co-doping in SrCd{sub 2}As{sub 2} with a hexagonal CaAl{sub 2}Si{sub 2}-type structure. Together with carrier doping via (Sr,Na) substitution, spin doping via (Cd,Mn) substitution results in ferromagnetic order with Curie temperature of T{sub C} up to 13 K. Negative magnetoresistance is assigned to weak localization at low temperatures, where the magnetization of samples becomes saturated. The hexagonal structure of (Sr{sub 1−x}Na{sub x})(Cd{sub 1−x}Mn{sub x}){sub 2}As{sub 2} can be acted as a promising candidate for spin manipulations owing to its relatively small coercive field of less than 24 Oe.

  10. Advances in semiconductor photodetectors for scintillators

    International Nuclear Information System (INIS)

    Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

    1997-01-01

    Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

  11. Temperature stimulates charge carriers in Ce0.90Fe0.1O2 for semiconductor to metal phase

    Science.gov (United States)

    Parveen, Mubeena; Saravanan, G.; Asvini, V.; Ravichandran, K.; Kalaiselvi, D.

    2018-04-01

    Ce0.90Fe0.1O2, cubic structure exhibits interesting electrical property-due to the effects of oxygen vacancies. Electrical response of nanocrystalline Ce0.90Fe0.1O2 material as a function of temperature was investigated using impedance spectroscopy. A change was observed in Nyquist plot for the temperature 903k, which has been analysed in terms of localized and delocalized electrons. An interesting behaviour of temperature stimulate semiconductor to metal like transition was observed in frequency dependent dielectric constant (ɛ') and frequency dependent dielectric loss(tan δ). Frequency dependence on the real and imaginary part of impedence with respect to temperature aids the presences of semiconductor to metal like transition in Ce0.90Fe0.1O2.

  12. High-temperature stability of electron transport in semiconductors with strong spin-orbital interaction

    Science.gov (United States)

    Tomaka, G.; Grendysa, J.; ŚliŻ, P.; Becker, C. R.; Polit, J.; Wojnarowska, R.; Stadler, A.; Sheregii, E. M.

    2016-05-01

    Experimental results of the magnetotransport measurements (longitudinal magnetoresistance Rx x and the Hall resistance Rx y) are presented over a wide interval of temperatures for several samples of Hg1 -xCdxTe (x ≈0.13 -0.15 ) grown by MBE—thin layers (thickness about 100 nm) strained and not strained and thick ones with thickness about 1 μ m . An amazing temperature stability of the SdH-oscillation period and amplitude is observed in the entire temperature interval of measurements up to 50 K. Moreover, the quantum Hall effect (QHE) behavior of the Hall resistance is registered in the same temperature interval. These peculiarities of the Rx x and Rx y for strained thin layers are interpreted using quantum Hall conductivity (QHC) on topologically protected surface states (TPSS) [C. Brüne et al., Phys. Rev. Lett. 106, 126803 (2011), 10.1103/PhysRevLett.106.126803]. In the case of not strained layers it is assumed that the QHC on the TPSS (or on the resonant interface states) contributes also to the conductance of the bulk samples.

  13. Spin-polarized investigation of ferromagnetism on magnetic semiconductors Mn{sub x}Ca{sub 1−x}S in the rock-salt phase

    Energy Technology Data Exchange (ETDEWEB)

    Choutri, H.; Ghebouli, M.A. [LMSE Laboratory, University of Bachir Ibrahimi, 34265 Bordj-Bou-Arréridj (Algeria); Ghebouli, B. [Laboratory of Surface and Interface Studies of Solid Materials, Department of Physics, Faculty of Science, Setif University 1, Setif 19000 (Algeria); Bouarissa, N., E-mail: n_bouarissa@yahoo.fr [Department of Physics, Faculty of Science, University of M' sila, 28000 M' sila (Algeria); Uçgun, E.; Ocak, H.Y. [Department of Physics, Faculty of Arts and Sciences, Dumlupinar University, Kutahya (Turkey)

    2014-12-15

    The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors Mn{sub x}Ca{sub 1−x}S in the rock-salt phase have been investigated using first-principles calculations with both LDA and LDA + U functional. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of Mn{sub x}Ca{sub 1−x}S is 4.4μ{sub B} and 4.5μ{sub B} for LDA and LDA + U functional and is independent of the Mn concentration. The unfilled Mn-3d levels reduce the local magnetic moment of Mn from its free space charge value of 5μ{sub B}–4.4μ{sub B} and4.5μ{sub B} for LDA and LDA + U functional due to 3p–3d hybridization. - Highlights: • Fundamental properties of magnetic semiconductors Mn{sub x}Ca{sub 1−x}S. • Rock-salt phase of Mn{sub x}Ca{sub 1−x}S. • Magnetic properties of the diluted magnetic semiconductors Mn{sub x}Ca{sub 1−x}S. • The use of LDA + U functionals.

  14. CdS{sub x}Te{sub 1-x} ternary semiconductors band gaps calculation using ground state and GW approximations

    Energy Technology Data Exchange (ETDEWEB)

    Kheloufi, Nawal; Bouzid, Abderrazak, E-mail: a_bouzid34@hotmail.com

    2016-06-25

    We present band gap calculations of zinc-blende ternary CdS{sub x}Te{sub 1-x} semiconductors within the standard DFT and quasiparticle calculations employing pseudopotential method. The DFT, the local density approximation (LDA) and the Generalized Gradient Approximation (GGA) based calculations have given very poor results compared to experimental data. The quasiparticle calculations have been investigated via the one-shot GW approximation. The present paper discuses and confirms the effect of inclusion of the semicore states in the cadmium (Cd) pseudopotential. The obtained GW quasiparticle band gap using Cd{sup +20} pseudopotential has been improved compared to the obtained results from the available pseudopotential without the treatment of semicore states. Our DFT and quasiparticle band gap results are discussed and compared to the available theoretical calculations and experimental data. - Graphical abstract: Band gaps improvement concerning the binary and ternary alloys using the GW approximation and Cd{sup 20+} pseudopotential with others levels of approximations (the LDA and GGA approximation employing the Cd{sup 12+} and the LDA within Cd{sup 20+} pseudopotential). - Highlights: • The direct Γ- Γ and indirect Γ- X and Γ- L bands gaps show a nonlinear behavior when S content is enhanced. • The quasiparticle band gap result for the investigated semiconductors is improved using the GW approximation. • All CdS{sub x}Te{sub 1-x} compounds in all compositions range from 0 to 1 are direct band gap semiconductors.

  15. Effect of temperature and magnetic field on disorder in semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Agrinskaya, N. V., E-mail: nina.agrins@mail.ioffe.ru; Kozub, V. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-02-15

    We present the results of consistent theoretical analysis of various factors that may lead to influence of temperature and external magnetic field on disorder in semiconductor structures. Main attention is paid to quantum well (QW) structures in which only QWs or both QW and barriers are doped (the doping level is assumed to be close to the value corresponding to the metal–insulator transition). The above factors include (i) ionization of localized states to the region of delocalized states above the mobility edge, which is presumed to exist in the impurity band; (ii) the coexistence in the upper and lower Hubbard bands (upon doping of QWs as well as barriers); in this case, in particular, the external magnetic field determines the relative contribution of the upper Hubbard band due to spin correlations at doubly filled sites; and (iii) the contribution of the exchange interaction at pairs of sites, in which the external magnetic field can affect the relation between ferromagnetic and antiferromagnetic configurations. All these factors, which affect the structure and degree of disorder, lead to specific features in the temperature dependence of resistivity and determine specific features of the magnetoresistance. Our conclusions are compared with available experimental data.

  16. Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Raju [Department of Electrical and Electronic Engineering, Shahjalal University of Science and Technology, Sylhet 3114 (Bangladesh); Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka 1000 (Bangladesh); Moslehuddin, A.S.M.; Mahmood, Zahid Hasan [Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka 1000 (Bangladesh); Hossain, A.K.M. Akther, E-mail: akmhossain@phy.buet.ac.bd [Department of Physics, Bangladesh University of Engineering and Technology, Dhaka 1000 (Bangladesh)

    2015-03-15

    Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

  17. Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy

    OpenAIRE

    Acbas, G.; Kim, M. -H.; Cukr, M.; Novak, V.; Scarpulla, M. A.; Dubon, O. D.; Jungwirth, T.; Sinova, Jairo; Cerne, J.

    2009-01-01

    We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. The infrared magneto-optical effects we study arise directly from the spin-splitting of the carrier ...

  18. Parallel of semi-empirical results simulated by MCNP of X-ray spectra with a semiconductor

    International Nuclear Information System (INIS)

    Santos, L.R.; Vivolo, V.; Potiens, M.P.A.; Navarro, M.V.T.; Santos, W.S.

    2016-01-01

    The aim of this study was to use the MCNPX radiation transport code to simulate X-ray spectra generated by a constant voltage system in a CdTe semiconductor detector. As part of the validation process, we obtained a series of experimental spectra. Comparatively, in all cases there is a good correlation between the two spectra. There were no statistically significant differences between the experimental results with the simulated. (author)

  19. Phase diagram as a function of temperature and magnetic field for magnetic semiconductors

    OpenAIRE

    Gonzalez, I.; Castro, J.; Baldomir, D.

    2002-01-01

    Using an extension of the Nagaev model of phase separation (E.L. Nagaev, and A.I. Podel'shchikov, Sov. Phys. JETP, 71 (1990) 1108), we calculate the phase diagram for degenerate antiferromagnetic semiconductors in the T-H plane for different current carrier densities. Both, wide-band semiconductors and 'double-exchange' materials, are investigated.

  20. Phase diagram as a function of temperature and magnetic field for magnetic semiconductors

    Science.gov (United States)

    González, I.; Castro, J.; Baldomir, D.

    2002-10-01

    Using an extension of the Nagaev model of phase separation [E. L. Nagaev and A. I. Podel'shchikov, Sov. Phys. JETP, 71, 1108 (1990)] we calculate the phase diagram for degenerate antiferromagnetic semiconductors in the T-H plane for different current carrier densities. Both wide-band semiconductors and double-exchange materials are investigated.

  1. Energy loss in degenerate semiconductors due to inelastic interaction with acoustic and piezoelectric phonons at low lattice temperatures

    International Nuclear Information System (INIS)

    Midday, S; Bhattacharya, D P

    2011-01-01

    The energy loss rate of an electron in a degenerate semiconductor because of inelastic interaction with deformation potential and piezoelectric acoustic phonons is calculated in the case when the lattice temperature is low, so that the approximations of the well-known traditional theory are not valid. Compared to the traditional results and those for non-degenerate semiconductors, the theory here reveals a more complex and altogether different dependence of the loss rate on the carrier energy and the lattice temperature. The numerical results obtained here for Si and GaAs show how significantly the degeneracy level, the true phonon distribution or the inelasticity of the interaction affects the loss characteristics at low temperatures.

  2. Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

    Science.gov (United States)

    Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

    2014-06-01

    The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

  3. Structural and luminescence properties of Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4}:Eu{sup 2+} chalcogenide semiconductor solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Tagiyev, B.G. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Tagiyev, O.B. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Baku Branch of M.V. Lomonosov Moscow State University, Baku AZ-1143 (Azerbaijan); Mammadov, A.I. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Quang, Vu Xuan [Institute of Research and Development, Duy Tan University, 550000 Da Nang (Viet Nam); Naghiyev, T.G., E-mail: tural@nagiyev.net [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Jabarov, S.H. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Bayerisches Geoinstitute, University Bayreuth, d-95440 Bayreuth (Germany); Leonenya, M.S.; Yablonskii, G.P. [Institute of Physics of National Academy Sciences of Belarus, 220072 Minsk (Belarus); Dang, N.T. [Institute of Research and Development, Duy Tan University, 550000 Da Nang (Viet Nam)

    2015-12-01

    The structural and luminescence properties of chalcogenide semiconductor Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4} solid solutions (x=0.1–0.9) doped with 7 at% of Eu{sup 2+} ions were studied at room temperature. It was found, that the crystal structure of Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4} solid solutions varies with the amount of Ca{sup 2+} cations and phase transition from cubic to orthorhombic takes place with increase of x value. Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4}:Eu{sup 2+} solid solutions exhibit intense photoluminescence in cyan to yellow spectral region depending on x due to 5d→4f electron–dipole transitions in Eu{sup 2+} ions. The peak position of the emission band shifts from 506 nm for x=0.1 to 555 nm for x=0.9 and the full width at half maximum of the emission band varies from 62 nm to 72 nm depending on the symmetry of the crystal lattice. The PL excitation spectrum of Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4}:Eu{sup 2+} covers the range at half maximum from 310 nm to 480 nm for x=0.1 and to 520 nm for x=0.9. It was shown that long-wavelength shift is caused by influence of the growing crystal field strength on Eu{sup 2+} ions.

  4. Growth of In x Ga1-x Sb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments.

    Science.gov (United States)

    Inatomi, Y; Sakata, K; Arivanandhan, M; Rajesh, G; Nirmal Kumar, V; Koyama, T; Momose, Y; Ozawa, T; Okano, Y; Hayakawa, Y

    2015-01-01

    In x Ga 1- x Sb is an important material that has tunable properties in the infrared (IR) region and is suitable for IR-device applications. Since the quality of crystals relies on growth conditions, the growth process of alloy semiconductors can be examined better under microgravity (μG) conditions where convection is suppressed. To investigate the dissolution and growth process of In x Ga 1- x Sb alloy semiconductors via a sandwiched structure of GaSb(seed)/InSb/GaSb(feed) under normal and μG conditions. In x Ga 1- x Sb crystals were grown at the International Space Station (ISS) under μG conditions, and a similar experiment was conducted under terrestrial conditions (1G) using the vertical gradient freezing (VGF) method. The grown crystals were cut along the growth direction and its growth properties were studied. The indium composition and growth rate of grown crystals were calculated. The shape of the growth interface was nearly flat under μG, whereas under 1G, it was highly concave with the initial seed interface being nearly flat and having facets at the peripheries. The quality of the μG crystals was better than that of the 1G samples, as the etch pit density was low in the μG sample. The growth rate was higher under μG compared with 1G. Moreover, the growth started at the peripheries under 1G, whereas it started throughout the seed interface under μG. Kinetics played a dominant role under 1G. The suppressed convection under μG affected the dissolution and growth process of the In x Ga 1- x Sb alloy semiconductor.

  5. Spectrally selective solar absorber with sharp and temperature dependent cut-off based on semiconductor nanowire arrays

    Science.gov (United States)

    Wang, Yang; Zhou, Lin; Zheng, Qinghui; Lu, Hong; Gan, Qiaoqiang; Yu, Zongfu; Zhu, Jia

    2017-05-01

    Spectrally selective absorbers (SSA) with high selectivity of absorption and sharp cut-off between high absorptivity and low emissivity are critical for efficient solar energy conversion. Here, we report the semiconductor nanowire enabled SSA with not only high absorption selectivity but also temperature dependent sharp absorption cut-off. By taking advantage of the temperature dependent bandgap of semiconductors, we systematically demonstrate that the absorption cut-off profile of the semiconductor-nanowire-based SSA can be flexibly tuned, which is quite different from most of the other SSA reported so far. As an example, silicon nanowire based selective absorbers are fabricated, with the measured absorption efficiency above (below) bandgap ˜97% (15%) combined with an extremely sharp absorption cut-off (transition region ˜200 nm), the sharpest SSA demonstrated so far. The demonstrated semiconductor-nanowire-based SSA can enable a high solar thermal efficiency of ≳86% under a wide range of operating conditions, which would be competitive candidates for the concentrated solar energy utilizations.

  6. Correlation between the band gap expansion and melting temperature depression of nanostructured semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jianwei, E-mail: jwl189@163.com; Zhao, Xinsheng [Laboratory for Quantum Design of Functional Material, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116 (China); Liu, Xinjuan [Center for Coordination Bond and Electronic Engineering, College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018 (China); Zheng, Xuejun [School of Mechanical Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China); Yang, Xuexian [Department of Physics, Jishou University, Jishou 416000, Hunan (China); Zhu, Zhe [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

    2015-09-28

    The band gap and melting temperature of a semiconductor are tunable with the size and shape of the specimen at the nanometer scale, and related mechanisms remain as yet unclear. In order to understand the common origin of the size and shape effect on these two seemingly irrelevant properties, we clarify, correlate, formulate, and quantify these two properties of GaAs, GaN, InP, and InN nanocrystals from the perspectives of bond order-length-strength correlation using the core-shell configuration. The consistency in the theoretical predictions, experimental observations, and numerical calculations verify that the broken-bond-induced local bond contraction and strength gain dictates the band gap expansion, while the atomic cohesive energy loss due to bond number reduction depresses the melting point. The fraction of the under-coordinated atoms in the skin shell quantitatively determines the shape and size dependency. The atomic under-coordination in the skin down to a depth of two atomic layers inducing a change in the local chemical bond is the common physical origin.

  7. Use of semiconductors in energy-dispersive X-ray analysis

    International Nuclear Information System (INIS)

    Schiekel, M.

    1983-01-01

    The state-of-the-art of the application of semiconductor detectors with high resolution for photon radiation in energy-dispersive spectrometers is reviewed. It is concluded that the use of semiconductor detectors results in an improvement of spectrometers and thus in a wider range of application. Characteristics of the spectrometers, such as energy resolution and efficiency, are discussed and possible applications indicated. (author)

  8. In-plane magnetic anisotropy and temperature dependence of switching field in (Ga, Mn) as ferromagnetic semiconductors.

    Science.gov (United States)

    Kamara, S; Terki, F; Dumas, R; Dehbaoui, M; Sadowski, J; Galéra, R M; Tran, Q-H; Charar, S

    2012-06-01

    We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two regions of temperature. At T Tc/2 the "zigzag-shape" signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.

  9. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    Science.gov (United States)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  10. Research on temperature measurement by X-ray transmission intensity

    International Nuclear Information System (INIS)

    Chen, Shuyue; Cheng, Rong

    2013-01-01

    The relationship between temperature and X-ray transmission intensity was researched and analyzed by inspecting material density change, which is caused by thermal expansion. A digital radiographic system was employed to obtain the images. On this basis, we deduced the temperature formula based on the average gray level of the captured images. The measured temperatures were obtained from the experiments and the errors were analyzed. We concluded that when X-rays pass through an object, the X-ray strength and the gray level of the image under high temperatures are greater than those under lower temperatures and the image gray level error has great impact on the accuracy of the measured temperature. The presented approach allowed the non-contact temperature measurement of material

  11. Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2

    International Nuclear Information System (INIS)

    Sun, F.; Zhao, G. Q.; Escanhoela, C. A. Jr.

    2017-01-01

    We investigate doping- and pressure-induced changes in the electronic state of Mn 3d and As 4p orbitals in II-II-V based diluted magnetic semiconductor (Ba_1_-_x,K_x)(Zn_1_-_y,Mn_y)_2As_2 to shed light into the mechanism of indirect exchange interactions leading to high ferromagnetic ordering temperature (T_c = 230 K in optimally doped samples). A suite of x-ray spectroscopy experiments (emission, absorption and dichroism) show that the emergence, and further enhancement of ferromagnetic interactions with increased hole doping into the As 4p band is accompanied by a decrease in local 3d spin density at Mn sites. This is a result of increasing Mn 3d - As 4p hybridization with hole doping which enhances indirect exchange interactions between Mn dopants and gives rise to induced magnetic polarization in As 4p states. On the contrary, application of pressure suppresses exchange interactions. While Mn Kβ emission spectra show a weak response of 3d state to pressure, clear As 4p band broadening (hole delocalization) is observed under pressure ultimately leading to loss of ferromagnetism concomitant with a semiconductor to metal transition. The pressure response of As 4p and Mn 3d states is intimately connected with the evolution of the As-As interlayer distance and the geometry of the MnAs_4 tetrahedral units, which we probed with X-ray diffraction. Our results indicate that hole doping increases the degree of covalency between the anion (As) p states and cation (Mn) d states in the MnA_s_4 tetrahedron, a crucial ingredient to promote indirect exchange interactions between Mn dopants and high T_c ferromagnetism. As a result, the instability of ferromagnetism and semiconducting state against pressure is mainly dictated by delocalization of anion p states.

  12. The role of hydrostatic pressure and temperature on bound polaron in semiconductor quantum dot

    International Nuclear Information System (INIS)

    El Moussaouy, A.; Ouchani, N.

    2014-01-01

    We studied theoretically the effects of hydrostatic pressure and temperature on the binding energy of shallow hydrogenic impurity in a cylindrical quantum dot (QD) using a variational approach within the effective mass approximation. The hydrostatic stress was applied along the QD growth axis. The interactions between the charge carriers and confined longitudinal optical (LO) phonon modes are taken into account. The numerical computation for GaAs/Ga 1−x Al x As QD has shown that the binding energy with and without the polaronic correction depends on the location of the impurity and the pressure effect and it is more pronounced for impurities in the QD center. Both the binding energy and the polaronic contribution increase linearly with increasing stress. For each pressure value, these energies are also found to decrease as the temperature increases. The results obtained show that in experimental studies of optical and electronic properties of QDs, the effects of pressure, temperature and polaronic correction on donor impurity binding energy should be taken into consideration

  13. Dosimetry of x-rays from high-temperature plasmas

    International Nuclear Information System (INIS)

    Yamamoto, Takayoshi; Abe, Nobuyuki; Kawanishi, Masaharu

    1980-01-01

    Study on the dosimetry of ionizing radiations, especially of X-rays, emitted from high-temperature plasms has been made. As to the unpolarized Bremsstrahlung, a brief method to estimate electron temperatures with TLD is described and evaluation of average energy and current of the run-away electrons in the turbulent heating Tokamak is made by observing the half-value layer of the emitted X-rays and the total exposure per one shot of the Tokamak discharge. As to the polarized one, it is shown that the anisotropic electron temperature is related to the degree of polarization of the X-rays. Furthermore, reference is made to the possibility of developing such X-ray generators as can emit nearly monochromatic X-rays (characteristic X-rays) or polarized ones arbitrarily. (author)

  14. Low Power Operation of Temperature-Modulated Metal Oxide Semiconductor Gas Sensors

    Directory of Open Access Journals (Sweden)

    Javier Burgués

    2018-01-01

    Full Text Available Mobile applications based on gas sensing present new opportunities for low-cost air quality monitoring, safety, and healthcare. Metal oxide semiconductor (MOX gas sensors represent the most prominent technology for integration into portable devices, such as smartphones and wearables. Traditionally, MOX sensors have been continuously powered to increase the stability of the sensing layer. However, continuous power is not feasible in many battery-operated applications due to power consumption limitations or the intended intermittent device operation. This work benchmarks two low-power, duty-cycling, and on-demand modes against the continuous power one. The duty-cycling mode periodically turns the sensors on and off and represents a trade-off between power consumption and stability. On-demand operation achieves the lowest power consumption by powering the sensors only while taking a measurement. Twelve thermally modulated SB-500-12 (FIS Inc. Jacksonville, FL, USA sensors were exposed to low concentrations of carbon monoxide (0–9 ppm with environmental conditions, such as ambient humidity (15–75% relative humidity and temperature (21–27 °C, varying within the indicated ranges. Partial Least Squares (PLS models were built using calibration data, and the prediction error in external validation samples was evaluated during the two weeks following calibration. We found that on-demand operation produced a deformation of the sensor conductance patterns, which led to an increase in the prediction error by almost a factor of 5 as compared to continuous operation (2.2 versus 0.45 ppm. Applying a 10% duty-cycling operation of 10-min periods reduced this prediction error to a factor of 2 (0.9 versus 0.45 ppm. The proposed duty-cycling powering scheme saved up to 90% energy as compared to the continuous operating mode. This low-power mode may be advantageous for applications that do not require continuous and periodic measurements, and which can tolerate

  15. Low Power Operation of Temperature-Modulated Metal Oxide Semiconductor Gas Sensors.

    Science.gov (United States)

    Burgués, Javier; Marco, Santiago

    2018-01-25

    Mobile applications based on gas sensing present new opportunities for low-cost air quality monitoring, safety, and healthcare. Metal oxide semiconductor (MOX) gas sensors represent the most prominent technology for integration into portable devices, such as smartphones and wearables. Traditionally, MOX sensors have been continuously powered to increase the stability of the sensing layer. However, continuous power is not feasible in many battery-operated applications due to power consumption limitations or the intended intermittent device operation. This work benchmarks two low-power, duty-cycling, and on-demand modes against the continuous power one. The duty-cycling mode periodically turns the sensors on and off and represents a trade-off between power consumption and stability. On-demand operation achieves the lowest power consumption by powering the sensors only while taking a measurement. Twelve thermally modulated SB-500-12 (FIS Inc. Jacksonville, FL, USA) sensors were exposed to low concentrations of carbon monoxide (0-9 ppm) with environmental conditions, such as ambient humidity (15-75% relative humidity) and temperature (21-27 °C), varying within the indicated ranges. Partial Least Squares (PLS) models were built using calibration data, and the prediction error in external validation samples was evaluated during the two weeks following calibration. We found that on-demand operation produced a deformation of the sensor conductance patterns, which led to an increase in the prediction error by almost a factor of 5 as compared to continuous operation (2.2 versus 0.45 ppm). Applying a 10% duty-cycling operation of 10-min periods reduced this prediction error to a factor of 2 (0.9 versus 0.45 ppm). The proposed duty-cycling powering scheme saved up to 90% energy as compared to the continuous operating mode. This low-power mode may be advantageous for applications that do not require continuous and periodic measurements, and which can tolerate slightly higher

  16. Semiconductor-to-metallic flipping in a ZnFe2O4–graphene based smart nano-system: Temperature/microwave magneto-dielectric spectroscopy

    International Nuclear Information System (INIS)

    Ameer, Shahid; Gul, Iftikhar Hussain; Mahmood, Nasir; Mujahid, Muhammad

    2015-01-01

    Zn-(FeO 2 ) 2 –graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis with different percentages of graphene. The structure of the nanocomposite was confirmed through X-ray diffraction, micro-Raman scattering spectroscopy, Ultraviolet–Visible spectroscopy, and Fourier transform infrared spectroscopy. The structural growth and morphological aspects were analyzed using scanning/transmission electron microscopy, revealing marvelous micro-structural features of the assembled nano-system resembling a maple leaf. To determine the composition, energy dispersive spectroscopy and X-ray photoelectron spectroscopy were used. Microwave magneto-dielectric spectroscopy revealed the improved dielectric properties of the nano-composite compared to those of the parent functional nanocrystals. Temperature gradient dielectric spectroscopy was used over the spectral range from 100 Hz to 5 MHz to reveal the phenomenological effect that the nanosystem flips from its usual semiconductor nature to a metallic nature with sensing temperature. Electrical conductivity and dielectric analysis indicated that the dielectric loss and the dielectric permittivity increased at room temperature. This extraordinary switching capability of the functionalized graphene nanosystem opens up a new dimension for engineering advanced and efficient smart composite materials. - Graphical abstract: Display Omitted - Highlights: • Zn-(FeO 2 ) 2 –graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis. • The synthesized nano-system exhibits marvelous leaf like microstructure. • These nano-composites show improved magneto dielectric response. • This engineered smart nano-system shows phenomenological flipping from semiconductor like nature to metallic behavior

  17. In situ X-ray investigations of oxygen precipitation in semiconductor silicon; In-situ-Roentgenuntersuchungen der Sauerstoffpraezipitation in Halbleitersilizium

    Energy Technology Data Exchange (ETDEWEB)

    Grillenberger, Hannes

    2011-03-04

    The precipitation of oxygen in Czochralski grown semiconductor silicon is investigated in situ during thermal treatments up to 1000 C with high energy X-rays. All investigations are performed with a focusing Laue diffractometer. The parameters of the diffraction curve are the relative full width at half maximum (rFHWM) and the enhancement of the integral intensity (EII). A readout software has been developed to extract these automatically from the detector image for the measured 220, -220 and 040 Bragg peaks. The sample thickness is set to 15 mm as this enhances the sensitivity of the method and the samples are processed after the strain-field diffraction (SFD) experiments to wafers for an ex situ characterization demanding wafers. Three experimental series with a total of 21 in situ SFD experiments with different thermal treatments have been performed. The slope of the initial temperature ramp is set to 1 K/min in the first and the third series to generate a high precipitate (Bulk Micro Defect, BMD) density. In the second series the slope is chosen as 10 K/min to generate a lower density in the same silicon material. It is shown with all experiments and with preliminary works that the built up of strain during the heat treatment is caused by BMDs during the high temperature period of the treatment. The detection limit of series 1 is found at 7 nm at a density of 10{sup 13}/cm{sup 3}, of series 2 at 40 nm at a density of 2 x 10{sup 8}/cm{sup 3}, and at 8 nm at a density of 4.8 x 10{sup 12}/cm{sup 3} for series 3. The local maximum of the EII at 450 C, which emerges coincident with a local minimum of the rFWHM in series 2 may be caused by thermal donors (TD). With the experiments is shown that SFD operates in the infrared-laser scattering tomography detection range, but also reaches in a region covered only by transmission electron microscopy (TEM) so far. In contrast to these methods SFD is not limited to low temperatures and in situ experiments can be done. Thus

  18. High-resolution photoemission study of Ce1-x La x RhAs: A collapse of the energy gap in the Kondo semiconductor

    International Nuclear Information System (INIS)

    Shimada, K.; Higashiguchi, M.; Fujimori, S.-I.; Saitoh, Y.; Fujimori, A.; Namatame, H.; Taniguchi, M.; Sasakawa, T.; Takabatake, T.

    2006-01-01

    High-resolution resonance-photoemission spectroscopy has been performed on the Ce 1- x La x RhAs (0≤x≤0.05) single crystal to elucidate a collapse of the energy gap in the Kondo semiconductor CeRhAs by La substitution. With increasing x, the spectral intensity of the Ce4f 1 derived states near the Fermi level decreases and new 4f derived spectral feature appears at a higher binding energy. The Rh4d-derived states, on the other hand, are not significantly changed by the substitution. New 4f-derived states have incoherent nature, which is responsible for the collapse of the semiconducting state for x>∼0.02

  19. Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam

    CERN Document Server

    Matsui, J; Yokoyama, K; Takeda, S; Katou, M; Kurihara, H; Watanabe, K; Kagoshima, Y; Kimura, S

    2003-01-01

    We have developed an X-ray microbeam with a small angular divergence by adopting X-ray optics with successive use of asymmetric Bragg reflection from silicon crystals for the both polarizations of the synchrotron X-rays. The microbeam actually obtained is several microns in size and possesses an angular divergence of less than 2 arcsec which enables us to measure the strain of 10 sup - sup 5 -10 sup - sup 6. By scanning the sample against the microbeam, distribution of the minute local strain in various regions of semiconductor crystals for electronic devices, e.g., the strain around the SiO sub 2 /Si film edge in silicon devices, the strain in an InGaAsP/InP stripe laser were measured.

  20. Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam

    International Nuclear Information System (INIS)

    Matsui, J.; Tsusaka, Y.; Yokoyama, K.; Takeda, S.; Katou, M.; Kurihara, H.; Watanabe, K.; Kagoshima, Y.; Kimura, S.

    2003-01-01

    We have developed an X-ray microbeam with a small angular divergence by adopting X-ray optics with successive use of asymmetric Bragg reflection from silicon crystals for the both polarizations of the synchrotron X-rays. The microbeam actually obtained is several microns in size and possesses an angular divergence of less than 2 arcsec which enables us to measure the strain of 10 -5 -10 -6 . By scanning the sample against the microbeam, distribution of the minute local strain in various regions of semiconductor crystals for electronic devices, e.g., the strain around the SiO 2 /Si film edge in silicon devices, the strain in an InGaAsP/InP stripe laser were measured

  1. Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, J. E-mail: matsui@sci.himeji-tech.ac.jp; Tsusaka, Y.; Yokoyama, K.; Takeda, S.; Katou, M.; Kurihara, H.; Watanabe, K.; Kagoshima, Y.; Kimura, S

    2003-01-01

    We have developed an X-ray microbeam with a small angular divergence by adopting X-ray optics with successive use of asymmetric Bragg reflection from silicon crystals for the both polarizations of the synchrotron X-rays. The microbeam actually obtained is several microns in size and possesses an angular divergence of less than 2 arcsec which enables us to measure the strain of 10{sup -5}-10{sup -6}. By scanning the sample against the microbeam, distribution of the minute local strain in various regions of semiconductor crystals for electronic devices, e.g., the strain around the SiO{sub 2}/Si film edge in silicon devices, the strain in an InGaAsP/InP stripe laser were measured.

  2. A simple model for the determination of L0, D and τ in a semiconductor and their temperature dependence

    International Nuclear Information System (INIS)

    Ahmed, F.

    1989-07-01

    It is very important to characterize the quality of a semiconductor material before it is processed into a device. Diffusion length L 0 , diffusion constant D and carrier lifetime τ of minority carriers are some of the parameters which play a vital role in determining the quality of a semiconductor material. Recently Ahmed and co-workers have shown that by measuring the frequency response of a time varying (e iwt ) light (or electron) beam one can determine all the important parameters including the absorption coefficient of light and surface recombination velocity. Here we propose a simple method by which one can obtain L 0 , D and τ separately from measured phase shift of short circuit photo current at some modulation frequency ω and at two different wavelengths of incident light. It is suggested that the above procedure is particularly suitable for inferring the temperature dependence of these parameters. (author). 5 refs

  3. Structural characterization of self-assembled semiconductor islands by three-dimensional X-ray diffraction mapping in reciprocal space

    International Nuclear Information System (INIS)

    Holy, V.; Mundboth, K.; Mokuta, C.; Metzger, T.H.; Stangl, J.; Bauer, G.; Boeck, T.; Schmidbauer, M.

    2008-01-01

    For the first time self-organized epitaxially grown semiconductor islands were investigated by a full three-dimensional mapping of the scattered X-ray intensity in reciprocal space. Intensity distributions were measured in a coplanar diffraction geometry around symmetric and asymmetric Bragg reflections. The 3D intensity maps were compared with theoretical simulations based on continuum-elasticity simulations of internal strains in the islands and on kinematical scattering theory whereby local chemical composition and strain profiles of the islands were retrieved

  4. Development of high power X-band semiconductor microwave switch for pulse compression systems of future linear colliders

    Directory of Open Access Journals (Sweden)

    Fumihiko Tamura

    2002-06-01

    Full Text Available We describe concepts for high power semiconductor rf switches, designed to handle signals at X-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at the TE_{01} mode in overmoded circular waveguides. The switch is composed of an array of tee junction elements that have a p-i-n diode array window in the third arm.

  5. Low temperature hopping conduction in amorphous Gesub(x)Sesub(1-x)

    International Nuclear Information System (INIS)

    Mehra, R.M.; Kumar, H.; Agarwal, S.C.; Sikka, P.; Mathur, P.C.

    1985-08-01

    Bulk amorphous samples of Gesub(x)Sesub(1-x) (0.5<=x<=0.7) were prepared by quenching. Dc conductivity measurements were carried out in the temperature range 77-300 K. In the low temperature region, the conduction occurs due to variable range hopping in the localized states near the Fermi level. The results are explained by Mott, Pollak and Butcher's models. Butcher's model which is based on the equivalent of conduction network is compatible with the results. (author)

  6. Monocrystal growth and characterization of HgI2 semiconductor compound for using in X and gamma spectrometries

    International Nuclear Information System (INIS)

    Faria, L.O.

    1987-01-01

    Mercury Iodide (HgI 2 ) platelets were grown from the vapor phase in the presence of polymers. These platelets are convenient to be used as room temperature operating semiconductor radiation detectors. Experiments demonstrate that the growth of platelets depends on a two-stage mass transport instead of depending on just one, as it has been thought. HgI 2 platelets 30 mm 2 large and 90 μm thick were obtained in a sealed evacuated fused quartz tube and were characterized by etch pit density measurements. (author) [pt

  7. Growth and characterization of monocrystals from HgI2 semiconductor compound for using in X and gamma spectroscopy

    International Nuclear Information System (INIS)

    Faria, L.O. de.

    1987-09-01

    Mercury Iodide (HgI 2 ) platelets were grown from the vapor phase in the presence of polymers. These platelets are convenient to be used as room temperature operating semiconductor radiation detectors. Experiments demonstrate that the growth of platelets depends on a two-stage mass transport instead of depending on just one, as it has been thought. HgI 2 platelets 30 mm 2 large and 90 μm thick were obtained in a sealed evacuated fused quartz tube and were characterized by etch pit density measurements. (author)

  8. Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in Mn3Mn1-x Pd x N thin films

    Science.gov (United States)

    Xu, T.; Ji, G. P.; Cao, Z. X.; Ji, A. L.

    2018-02-01

    Thin films of antiperovskite Mn3Mn1-x Pd x N with x up to 0.36 were grown by reactive magnetron co-sputtering method. All the deposits exhibit a [1 0 0] preferential orientation, with the lattice constant slightly enlarged in samples with ever more Pd atoms partially substituting the MnI atoms in Mn3MnN matrix. The replacement of MnI atoms in antiperovskite structure by Pd atoms, besides reducing the saturation magnetization, also invokes a metal-semiconductor transition which occurs remarkably at a comparable resistivity level. Moreover, a positive magnetoresistance was observed in samples of a high Pd content. These tunable electrical and magnetic properties of ternary antiperovskite compounds might promise some ingenious applications in electronic industry.

  9. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

    Science.gov (United States)

    2014-01-01

    ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution...Simulated (Green) Capacitance of the GSG Pads ........................ 9 Figure 6: Die Picture and Schematic of the L-2L Coplanar Waveguides...complementary metal-oxide-semiconductor (CMOS) technology. A ring oscillator based temperature sensor was designed to compensate for gain variations

  10. Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature

    Directory of Open Access Journals (Sweden)

    Zhishuo Huang

    2016-08-01

    Full Text Available Neither of the two typical two-dimensional materials, graphene and single layer MoS 2 , are good enough for developing semiconductor logical devices. We calculated the electron mobility of 14 two-dimensional semiconductors with composition of MX 2 , where M (=Mo, W, Sn, Hf, Zr and Pt are transition metals, and Xs are S, Se and Te. We approximated the electron phonon scattering matrix by deformation potentials, within which long wave longitudinal acoustical and optical phonon scatterings were included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WS 2 , PtS 2 and PtSe 2 are promising for logical devices regarding the possible high electron mobility and finite band gap. Especially, the phonon limited electron mobility in PtSe 2 reaches about 4000 cm 2 ·V - 1 ·s - 1 at room temperature, which is the highest among the compounds with an indirect bandgap of about 1.25 eV under the local density approximation. Our results can be the first guide for experiments to synthesize better two-dimensional materials for future semiconductor devices.

  11. Direct measurements of multi-photon induced nonlinear lattice dynamics in semiconductors via time-resolved x-ray scattering.

    Science.gov (United States)

    Williams, G Jackson; Lee, Sooheyong; Walko, Donald A; Watson, Michael A; Jo, Wonhuyk; Lee, Dong Ryeol; Landahl, Eric C

    2016-12-22

    Nonlinear optical phenomena in semiconductors present several fundamental problems in modern optics that are of great importance for the development of optoelectronic devices. In particular, the details of photo-induced lattice dynamics at early time-scales prior to carrier recombination remain poorly understood. We demonstrate the first integrated measurements of both optical and structural, material-dependent quantities while also inferring the bulk impulsive strain profile by using high spatial-resolution time-resolved x-ray scattering (TRXS) on bulk crystalline gallium arsenide. Our findings reveal distinctive laser-fluence dependent crystal lattice responses, which are not described by previous TRXS experiments or models. The initial linear expansion of the crystal upon laser excitation stagnates at a laser fluence corresponding to the saturation of the free carrier density before resuming expansion in a third regime at higher fluences where two-photon absorption becomes dominant. Our interpretations of the lattice dynamics as nonlinear optical effects are confirmed by numerical simulations and by additional measurements in an n-type semiconductor that allows higher-order nonlinear optical processes to be directly observed as modulations of x-ray diffraction lineshapes.

  12. Room temperature transparent conducting magnetic oxide (TCMO properties in heavy ion doped oxide semiconductor

    Directory of Open Access Journals (Sweden)

    Juwon Lee

    2017-08-01

    Full Text Available Bismuth doped ZnO (ZnBi0.03O0.97 thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS. Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g. This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.

  13. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  14. Structural characterization of the high-temperature modification of the Cu{sub 2}ZnGeTe{sub 4} quaternary semiconductor compound

    Energy Technology Data Exchange (ETDEWEB)

    Nieves, L.; Marcano, G.; Power, C.; Rincon, C. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of); Delgado, G.E. [Laboratorio de Cristalografia, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of); Lopez-Rivera, S.A. [Grupo de Fisica Aplicada, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of)

    2016-06-15

    A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu{sub 2}ZnGeTe{sub 4} quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm{sup -1} have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm{sup -1} tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this high-temperature modification of ZnTe and Cu{sub 2}GeTe{sub 3} secondary phases has been detected by both XRD and Raman spectroscopy. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Multiphonon resonant Raman scattering in the semimagnetic semiconductor Cd1-xMnxTe: Froehlich and deformation potential exciton-phonon interaction

    International Nuclear Information System (INIS)

    Riera, R; Rosas, R; Marin, J L; Bergues, J M; Campoy, G

    2003-01-01

    A theory describing multiphonon resonant Raman scattering (MPRRS) processes in wide-gap diluted magnetic semiconductors is presented, with Cd 1-x Mn x Te as an example. The incident radiation frequency ω l is taken above the fundamental absorption region. The photoexcited electron and hole make real transitions through the LO phonon, when one considers Froehlich (F) and deformation potential (DP) interactions. The strong exchange interaction, typical of these materials, leads to a large spin splitting of the exciton states in the magnetic field. Neglecting Landau quantization, this Zeeman splitting gives rise to the formation of eight bands (two conduction and six valence ones) and ten different exciton states according to the polarization of the incident light. Explicit expressions for the MPRRS intensity of second and third order, the indirect creation and annihilation probabilities, the exciton lifetime, and the probabilities of transition between different exciton states and different types of exciton as a function of ω l and the external magnetic field are presented. The selection rules for all hot exciton transitions via exciton-photon interaction and F and DP exciton-phonon interactions are investigated. The exciton energies, as a function of B, the Mn concentration x, and the temperature T, are compared to a theoretical expression. Graphics for creation and annihilation probabilities, lifetime, and Raman intensity of second and third order are discussed

  16. Photoemission study of the temperature-dependent energy-gap formation in the Kondo semiconductor CeRhAs

    International Nuclear Information System (INIS)

    Shimada, K.; Arita, M.; Takeda, Y.; Namatame, H.; Taniguchi, M.; Higashiguchi, M.; Oguchi, T.; Sasakawa, T.; Suemitsu, T.; Takabatake, T.

    2004-01-01

    Full text: The orthorhombic CeRhAs, known as a Kondo semiconductor, has attracted much interest for its unusual energy-gap formation associated with the successive 1st order phase transitions. In order to elucidate the mechanism of the energy- gap formation, we have done high-resolution temperature-dependent photoemission spectroscopy on the undulator beamlines of a compact electron-storage ring, HiSOR, at Hiroshima University. We have observed directly the energy-gap formation in the Ce 4f states and in the conduction bands. Comparing with the isostructural Kondo semimetal CeRhSb, we discuss the energy gap formation in CeRhAs

  17. Photochemically engineering the metal-semiconductor interface for room-temperature transfer hydrogenation of nitroarenes with formic acid.

    Science.gov (United States)

    Li, Xin-Hao; Cai, Yi-Yu; Gong, Ling-Hong; Fu, Wei; Wang, Kai-Xue; Bao, Hong-Liang; Wei, Xiao; Chen, Jie-Sheng

    2014-12-08

    A mild photochemical approach was applied to construct highly coupled metal-semiconductor dyads, which were found to efficiently facilitate the hydrogenation of nitrobenzene. Aniline was produced in excellent yield (>99 %, TOF: 1183) using formic acid as hydrogen source and water as solvent at room temperature. This general and green catalytic process is applicable to a wide range of nitroarenes without the involvement of high-pressure gases or sacrificial additives. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Ferromagnetic transition temperature enhancement in (Ga, Mn)As semiconductors by carbon codoping

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Mašek, Jan; Sinova, J.; MacDonald, A. H.

    2003-01-01

    Roč. 68, č. 16 (2003), s. 161202-1 - 161202-4 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA AV ČR IAA1010214 Institutional research plan: CEZ:AV0Z1010914 Keywords : (Ga, Mn)(As, C) semiconductors * tight-binding coherent-potential approximation * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  19. Low temperature magnetic characterization of EuO1-x

    Science.gov (United States)

    Rimal, Gaurab; Tang, Jinke

    EuO is a widely studied magnetic semiconductor. It is an ideal case of a Heisenberg ferromagnet as well as a model magnetic polaron system. The interesting aspect of this material is the existance of magnetic polarons in the low temperature region. We study the properties of oxygen deficient EuO prepared by pulsed laser deposition. Besides normal ferromagnetic transitions near 70K and 140K, we observe a different transition at 16K. We also observe a shift in the coercivity for field cooling versus zero field cooling. Possible mechanisms driving these behaviors will be discussed. This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering (DEFG02-10ER46728) and by the School of Energy Resources of the University of Wyoming.

  20. Synthesis of diluted magnetic semiconductor Bi{sub 2−x}Mn{sub x}Te{sub 3} nanocrystals in a host glass matrix

    Energy Technology Data Exchange (ETDEWEB)

    Silva, R.S. [Instituto de Ciências Exatas, Naturais e Educação (ICENE), Departamento de Física, Universidade Federal do Triângulo Mineiro, 38025-180 Uberaba, Minas Gerais (Brazil); Mikhail, H.D., E-mail: ricardosilva@fisica.uftm.edu.br [Instituto de Ciências Tecnológicas e Exatas (ICTE), Departamento de Engenharia Mecânica, Universidade Federal do Triângulo Mineiro, 38064-200 Uberaba, Minas Gerais (Brazil); Pavani, R. [Instituto de Ciências Exatas, Naturais e Educação (ICENE), Departamento de Física, Universidade Federal do Triângulo Mineiro, 38025-180 Uberaba, Minas Gerais (Brazil); Cano, N.F. [Departamento de Ciências do Mar, Universidade Federal de São Paulo, 11030-400 Santos, São Paulo (Brazil); Silva, A.C.A.; Dantas, N.O. [Instituto de Física, Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Universidade Federal de Uberlândia, 38400-902 Uberlândia, Minas Gerais (Brazil)

    2015-11-05

    Diluted magnetic semiconductors of manganese doped in bismuth-telluride nanocrystals (Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs) were grown in a glass matrix and investigated by Transmission Electron Microscopy, X-Ray Diffraction, Atomic Force Microscopy/Magnetic Force Microscopy, and Electron Paramagnetic Resonance. TEM images showed that the nanocrystals formed within the glass matrix were nearly spherical, with average sizes between 4 and 5 nm, and d{sub 015}-spacing of approximately 0.322 nm, which corresponds to the (015) interplanar distance in Bi{sub 2}Te{sub 3} bulk. The diffraction patterns showed that the diffraction peak associated with the (015) plane of the Bi{sub 2−x}Mn{sub x}Te{sub 3} nanocrystals shifts to larger diffraction angles as manganese (Mn) concentration increases, suggesting that the Mn{sup 2+} ions are substitutional defects occupying Bi sites (Mn{sub Bi}). AFM and MFM measurements showed magnetic phase contrast patterns, providing further evidence of Mn{sup 2+} ion incorporation in the nanocrystal structure. EPR signal of manganese ion incorporation and valence states in the crystalline structure of the Bi{sub 2}Te{sub 3} nanocrystals confirmed the presence of the Mn{sup 2+} state. - Highlights: • Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs were synthesized in a glass matrix by fusion method. • Transmission Electronic Microscopy shows the formation of Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs. • The sp-d exchange interaction in DMS NCs can be evidenced by X Ray-Diffraction and Magnetic Force Microscopy. • Electron Paramagnetic Resonance spectra confirmed that Mn{sup 2+} ions are located in two distinct Bi{sub 2}Te{sub 3} NCs sites.

  1. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  2. Development of an in situ temperature stage for synchrotron X-ray spectromicroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Chakraborty, R., E-mail: rupak@alum.mit.edu, E-mail: buonassisi@mit.edu; Serdy, J.; Culpepper, M. L.; Buonassisi, T., E-mail: rupak@alum.mit.edu, E-mail: buonassisi@mit.edu [Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); West, B.; Stuckelberger, M.; Bertoni, M. I. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Lai, B.; Maser, J. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2015-11-15

    In situ characterization of micro- and nanoscale defects in polycrystalline thin-film materials is required to elucidate the physics governing defect formation and evolution during photovoltaic device fabrication and operation. X-ray fluorescence spectromicroscopy is particularly well-suited to study defects in compound semiconductors, as it has a large information depth appropriate to study thick and complex materials, is sensitive to trace amounts of atomic species, and provides quantitative elemental information, non-destructively. Current in situ methods using this technique typically require extensive sample preparation. In this work, we design and build an in situ temperature stage to study defect kinetics in thin-film solar cells under actual processing conditions, requiring minimal sample preparation. Careful selection of construction materials also enables controlled non-oxidizing atmospheres inside the sample chamber such as H{sub 2}Se and H{sub 2}S. Temperature ramp rates of up to 300 °C/min are achieved, with a maximum sample temperature of 600 °C. As a case study, we use the stage for synchrotron X-ray fluorescence spectromicroscopy of CuIn{sub x}Ga{sub 1−x}Se{sub 2} (CIGS) thin-films and demonstrate predictable sample thermal drift for temperatures 25–400 °C, allowing features on the order of the resolution of the measurement technique (125 nm) to be tracked while heating. The stage enables previously unattainable in situ studies of nanoscale defect kinetics under industrially relevant processing conditions, allowing a deeper understanding of the relationship between material processing parameters, materials properties, and device performance.

  3. In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

    Science.gov (United States)

    Takahasi, Masamitu

    2018-05-01

    The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III–V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid–solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

  4. Optical and magnetic resonance investigations of Zn{sub 1-} {sub x} Mn {sub x} O magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Huawei [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Shi Erwei [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Chen Zhizhan [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)]. E-mail: zzchen@mail.sic.ac.cn; Liu Xuechao [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Xiao Bing [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Song Lixin [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

    2006-10-15

    Zn{sub 1-} {sub x} Mn {sub x} O crystallites were synthesized by hydrothermal method. X-ray diffraction, UV-Vis absorption spectroscopy, and electron paramagnetic resonance (EPR) spectra confirm the substitution of Zn site by Mn{sup 2+} ion. The nonmonotonic variation of band gap exhibits that the short-ranged interactions between the d electrons of Mn and the s and p electrons of the host bands are dominated at lower Mn concentration (x). EPR spectra show that Mn{sup 2+} is in exchange interaction at higher x. By using a Curie-Weiss equation on the EPR data, it is found that the dominant magnetic property is antiferromagnetic for higher x, and paramagnetic for lower x.

  5. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

    Directory of Open Access Journals (Sweden)

    Konrad Maier

    2015-09-01

    Full Text Available In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

  6. Study of the modifications induced in AlxGa1-xN semiconductors under swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Moisy, Florent

    2016-01-01

    Nitride semiconductors are attractive materials for optoelectronic applications. They can be subjected to heavy ions in a wide range of energy during their elaboration (improvement of their properties by ionic implantation) or during their potential use in extreme environments (outer space). This thesis focuses on the study of AlxGa1-xN alloys under heavy ion irradiation from GANIL. In GaN, the formation of Ga vacancies has been highlighted, these latter coming from elastic collisions between atoms in the material and the projectiles. On the other hand, it is possible to observe the formation of disordered ion tracks for projectiles with high electronic stopping power (Se). These tracks induce strong surface modifications, a closing of the optical bandgap, but also an extension strain along the direction parallel to the ion direction and biaxial stresses of some GPa. Concerning AlxGa1-xN alloys with x from 0.3 to 1, the points defects are more complex, and a synergy between electronic excitations and nuclear collisions is responsible of their formation. Nevertheless, the increase of the Al molar fraction (x), tends to improve the resistance to ion tracks formation in these materials. (author) [fr

  7. Prospects of high temperature ferromagnetism in (Ga, Mn)As semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Wang, K. Y.; Mašek, Jan; Edmonds, K. W.; König, J.; Sinova, J.; Polini, M.; Goncharuk, Natalya; MacDonald, A. H.; Sawicki, M.; Campion, R. P.; Zhao, L.X.; Foxon, C. T.; Gallagher, B. L.

    2005-01-01

    Roč. 72, č. 16 (2005), 165204/1-165204/13 ISSN 1098-0121 R&D Projects: GA ČR(CZ) GA202/05/0575; GA MŠk(CZ) LC510 Grant - others:EU FENIKS(XE) EC:G5RD-CT-2001-00535; EPSRC(GB) GR/S81407/01; Welch Foundation(GB) DE-FG03-02ER45958; Deutsche Forschungsgemeinschaft(DE) SFB 491 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.185, year: 2005

  8. Effect of temperature and humidity on electrical properties of organic semiconductor orange dye films deposited from solution

    International Nuclear Information System (INIS)

    Karimov, K.S.; Babadzhanov, A.; Turaeva, M.A.; Marupov, R.; Ahmed, M.M.; Khalid, F.A.; Khan, M.N.; Zakaullah, Kh.; Moiz, S.A.

    2003-01-01

    In this study the effect of temperature and humidity on electrical properties of organic semiconductor orange dye (OD) have been examined. Thin films of OD (C/sub 17/H/sub 17/N/sub 5/O/sub 2/) were deposited from 10 wt. % aqueous solution on gold and conductive glass (SnO/sub 2/) substrates. The films were grown at room temperature under normal gravity conditions, i.e., 1 g and in a spin coater up to an angular speed of 1000 RPM. Two different types of structures: surface Ga/OD/Au and sandwich AVOD/SnO/sub 2/ were fabricated and their DC and low frequency AC characteristics were evaluated for the temperature range 30-70 deg. C at ambient humidity of 50-80 %. It was observed that the sandwich structure of OD films show rectification behavior whilst the conductivity of all devices are temperature and humidity dependent. Observed room temperature activation energy for OD films was 0.30 eV which showed an increase up to 0.51 eV as a function of temperature. It was found that certain sandwich structures are more sensitive to humidity than others and the observed resistance to humidity ratio for Au/OD/Au was 5.4 whereas for Au/OD/Ga samples it was 5.0. (author)

  9. Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

    Energy Technology Data Exchange (ETDEWEB)

    Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Asakura, Yuji [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Yokoyama, Haruki [NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)

    2014-06-30

    We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

  10. Temperature-induced assembly of semiconductor nanocrystals into fractal architectures and thermoelectric power properties in Au/Ge bilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Li Quanbao; Wang Jian; Jiao Zheng [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Wu Minghong, E-mail: mhwu@staff.shu.edu.cn [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Shek, Chan-Hung; Lawrence Wu, C.M.; Lai, Joseph K.L. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Chen Zhiwen, E-mail: cnzwchen@yahoo.com.cn [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)

    2011-08-15

    Highlights: > Ge fractal architectures were achieved by temperature-induced assembly. > The appearance of fractal architectures influences the thermoelectric power. > But it has little effect on the resistivity. > The values of the superlocalization exponent were within 1.22 {<=} {xi} {<=} 1.29. > It was higher than expected for two-dimension fractal system. - Abstract: Fractal architectures of semiconductor nanocrystals were successfully achieved by temperature-induced assembly of semiconductor nanocrystals in gold/germanium (Au/Ge) bilayer films. New assessment strategies of fractal architectures are of fundamental importance in the development of micro/nano-devices. Temperature-dependent properties including resistivity and thermoelectric power (TEP) of Au/Ge bilayer films with self-similar fractal patterns were investigated in detail. Experimental results indicated that the microstructure of Au film plays an important role in the characteristics of Au/Ge bilayer films after annealing and the crystallization processes of amorphous Ge accompany by fractal formation of Ge nanocrystals via temperature-induced assembly. The appearance of fractal architectures has significantly influence on the TEP but little effect on the resistivity of the annealed bilayer film. By analysis of the data, we found that the values of superlocalization exponent are within 1.22 {<=} {xi} {<=} 1.29, which are higher than expected for two-dimension fractal systems. The results provided possible evidence for the superlocalization on fractal architectures in Au/Ge bilayer films. The TEP measurements are considered a more effective method than the conductivity for investigating superlocalization in a percolating system.

  11. Measurement of the energetics of metal film growth on a semiconductor: Ag/ Si(100)-2x1

    DEFF Research Database (Denmark)

    Starr, D.E.; Ranney, J.T.; Larsen, Jane Hvolbæk

    2001-01-01

    The first direct calorimetric measurements of the energetics of metal film growth on a semiconductor surface are presented. The heat of adsorption of Ag on Si(100)-(2 x 1) at 300 K decreases from similar to 347 to 246 kJ/mol with coverage in the first monolayer (ML) due to overlap of substrate...... strain from nearby Ag islands. It then rises quickly toward the bulk sublimation enthalpy (285 kJ/mol) as 3D particles grow. A wetting layer grows to 1.0 ML, but is metastable above similar to0.55 ML and dewets when kinetics permit. This may be common when adsorbate islands induce a large strain...

  12. X3 expansion tube driver gas spectroscopy and temperature measurements

    Science.gov (United States)

    Parekh, V.; Gildfind, D.; Lewis, S.; James, C.

    2017-11-01

    The University of Queensland's X3 facility is a large, free-piston driven expansion tube used for super-orbital and high Mach number scramjet aerothermodynamic studies. During recent development of new scramjet test flow conditions, experimentally measured shock speeds were found to be significantly lower than that predicted by initial driver performance calculations. These calculations were based on ideal, isentropic compression of the driver gas and indicated that loss mechanisms, not accounted for in the preliminary analysis, were significant. The critical determinant of shock speed is peak driver gas sound speed, which for a given gas composition depends on the peak driver gas temperature. This temperature may be inaccurately estimated if an incorrect fill temperature is assumed, or if heat losses during driver gas compression are significant but not accounted for. For this study, the ideal predicted peak temperature was 3750 K, without accounting for losses. However, a much lower driver temperature of 2400 K is suggested based on measured experimental shock speeds. This study aimed to measure initial and peak driver gas temperatures for a representative X3 operating condition. Examination of the transient temperatures of the driver gas and compression tube steel wall during the initial fill process showed that once the filling process was complete, the steady-state driver gas temperature closely matched the tube wall temperature. Therefore, while assuming the gas is initially at the ambient laboratory temperature is not a significant source of error, it can be entirely mitigated by simply monitoring tube wall temperature. Optical emission spectroscopy was used to determine the driver gas spectra after diaphragm rupture; the driver gas emission spectrum exhibited a significant continuum radiation component, with prominent spectral lines attributed to contamination of the gas. A graybody approximation of the continuum suggested a peak driver gas temperature of

  13. X3 expansion tube driver gas spectroscopy and temperature measurements

    Science.gov (United States)

    Parekh, V.; Gildfind, D.; Lewis, S.; James, C.

    2018-07-01

    The University of Queensland's X3 facility is a large, free-piston driven expansion tube used for super-orbital and high Mach number scramjet aerothermodynamic studies. During recent development of new scramjet test flow conditions, experimentally measured shock speeds were found to be significantly lower than that predicted by initial driver performance calculations. These calculations were based on ideal, isentropic compression of the driver gas and indicated that loss mechanisms, not accounted for in the preliminary analysis, were significant. The critical determinant of shock speed is peak driver gas sound speed, which for a given gas composition depends on the peak driver gas temperature. This temperature may be inaccurately estimated if an incorrect fill temperature is assumed, or if heat losses during driver gas compression are significant but not accounted for. For this study, the ideal predicted peak temperature was 3750 K, without accounting for losses. However, a much lower driver temperature of 2400 K is suggested based on measured experimental shock speeds. This study aimed to measure initial and peak driver gas temperatures for a representative X3 operating condition. Examination of the transient temperatures of the driver gas and compression tube steel wall during the initial fill process showed that once the filling process was complete, the steady-state driver gas temperature closely matched the tube wall temperature. Therefore, while assuming the gas is initially at the ambient laboratory temperature is not a significant source of error, it can be entirely mitigated by simply monitoring tube wall temperature. Optical emission spectroscopy was used to determine the driver gas spectra after diaphragm rupture; the driver gas emission spectrum exhibited a significant continuum radiation component, with prominent spectral lines attributed to contamination of the gas. A graybody approximation of the continuum suggested a peak driver gas temperature of

  14. P2X(3) receptor gating near normal body temperature

    Czech Academy of Sciences Publication Activity Database

    Kmyhz, V.; Maximyuk, O.; Teslenko, V.; Verkhratsky, Alexei; Krishtal, O.

    2008-01-01

    Roč. 456, č. 12 (2008), s. 339-347 ISSN 0031-6768 Institutional research plan: CEZ:AV0Z50390703 Keywords : P2X3 receptors * Temperature-sensitivity * Gating Subject RIV: FH - Neurology Impact factor: 3.526, year: 2008

  15. TlHgInS 3 : An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hao; Malliakas, Christos D.; Han, Fei; Chung, Duck Young; Kanatzidis, Mercouri G.

    2015-08-11

    The quaternary compound TlHgInS3 crystallizes in a new structure type of space group, C2/c, with cell parameters a = 13.916(3) angstrom, b = 3.9132(8) angstrom, c = 21.403(4) angstrom, beta = 104.16(3)degrees, V = 1130.1(8) angstrom(3), and rho = 7.241 g/cm(3). The structure is a unique three-dimensional framework with parallel tunnels, which is formed by (1)(infinity)[InS33-] infinite chains bridged by linearly coordinated Hg2+ ions. TlHgInS3 is a semiconductor with a band gap of 1.74 eV and a resistivity of similar to 4.32 G Omega cm. TlHgInS3 single crystals exhibit photocurrent response when exposed to Ag X-rays. The mobility-lifetime product (mu tau) of the electrons and holes estimated from the photocurrent measurements are (mu tau)(e) approximate to 3.6 x 10(-4) cm(2)/V and (mu tau)(h) approximate to 2.0 x 10(-4) cm(2)/V. Electronic structure calculations at the density functional theory level indicate an indirect band gap and a relatively small effective mass for both electrons and holes. Based on the photoconductivity data, TlHgInS3 is a potential material for radiation detection applications.

  16. Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions

    KAUST Repository

    Hu, Weijin

    2017-12-07

    Persistent photoconductivity (PPC) is an intriguing physical phenomenon, where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of optoelectronic devices. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane geometry, a colossal X-ray-induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X-ray-induced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon-enhanced carrier density/mobility in the current-in-plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X-ray sensing and imaging applications.

  17. X-ray radiation damage of organic semiconductor thin films during grazing incidence diffraction experiments

    Energy Technology Data Exchange (ETDEWEB)

    Neuhold, A., E-mail: alfred.neuhold@tugraz.at [Institute of Solid State Physics, Graz University of Technology, Graz (Austria); Novak, J.; Flesch, H.-G.; Moser, A.; Djuric, T. [Institute of Solid State Physics, Graz University of Technology, Graz (Austria); Grodd, L.; Grigorian, S.; Pietsch, U. [Institute of Physics, University Siegen (Germany); Resel, R. [Institute of Solid State Physics, Graz University of Technology, Graz (Austria)

    2012-08-01

    Since modern synchrotrons with highly intense X-ray beams are in use to investigate organic materials, the stability of soft matter materials during beam exposure is a crucial issue. Grazing incidence X-ray diffraction and specular X-ray reflectivity measurements were performed on thin films of organic semiconducting materials, like poly(3-hexylthiophene) (P3HT), sexithiophene and pentacene. These films were irradiated with an average flux density between 10{sup 15} and 10{sup 16} photons/(s mm{sup 2}) and evidenced a different stability in synchrotron X-ray radiation. The semi-crystalline P3HT showed a clear intensity decrease of the 1 0 0 Bragg peak and 0 2 0 Bragg peak compared to the rather stable diffraction features of the molecular crystals sexithiophene and pentacene. The difference in synchrotron X-ray radiation stability is explained by the interaction of the X-ray beam with the individual chemical components in the molecules as well as by the different crystallinities of the materials. Furthermore, the semi-crystalline P3HT film exhibited an increase of film thickness after irradiation and the surface roughness slightly decreased. To summarize, this study shows a strong influence of synchrotron X-ray radiation to specific organic thin films like e.g. P3HT, while others like pentacene and sexithiophene are observed as quite stable.

  18. Study of hard X-ray dose enhancement effects for some kinds of semiconductor devices

    CERN Document Server

    Guo Hong Xia; Chen Yu Sheng; Zhou Hui; He Chao Hui; Xie Ya Ning; Huang Yu Ying; He Wei; Hu Tian Dou

    2002-01-01

    Experimental results of X-ray dose enhancement effects are given for CMOS4069 and floating gate ROMs irradiated in Beijing Synchrotron Radiation Facility and in cobalt source. Shift of threshold voltage vs. total dose for CMOS4069 and the errors vs. total dose for 28f256 and 29c256 have been tested on line and the equivalent relation of total dose damage under the same accumulated dose is provided comparing the response of devices irradiated by X-ray and gamma-ray source. These results can be provided for X-ray radiation hardening technology as an effective evaluation data

  19. Room temperature X- and gamma-ray detectors using thallium bromide crystals

    CERN Document Server

    Hitomi, K; Shoji, T; Suehiro, T; Hiratate, Y

    1999-01-01

    Thallium bromide (TlBr) is a compound semiconductor with wide band gap (2.68 eV) and high X- and gamma-ray stopping power. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using purified material. Two types of room temperature X- and gamma-ray detectors were fabricated from the TlBr crystals: TlBr detectors with high detection efficiency for positron annihilation gamma-ray (511 keV) detection and TlBr detectors with high-energy resolution for low-energy X-ray detection. The detector of the former type demonstrated energy resolution of 56 keV FWHM (11%) for 511 keV gamma-rays. Energy resolution of 1.81 keV FWHM for 5.9 keV was obtained from the detector of the latter type. In order to analyze noise characteristics of the detector-preamplifier assembly, the equivalent noise charge (ENC) was measured as a function of the amplifier shaping time for the high-resolution detector. This analysis shows that parallel white noise and 1/f noise were dominant noise sources in the detector...

  20. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    , which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin

  1. Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces

    Science.gov (United States)

    Gastaldo, Daniele; Conta, Gianluca; Coïsson, Marco; Amato, Giampiero; Tiberto, Paola; Allia, Paolo

    2018-05-01

    A method for the synthesis of room-temperature ferromagnetic dilute semiconductor Ge1-xMnx (5 % < x < 8 %) quantum dots by molecular beam epitaxy by selective growth on hydrogen terminated silicon (100) surface is presented. The functionalized substrates, as well as the nanostructures, were characterized in situ by reflection high-energy electron diffraction. The quantum dots density and equivalent radius were extracted from field emission scanning electron microscope pictures, obtained ex-situ. Magnetic characterizations were performed by superconducting quantum interference device vibrating sample magnetometry revealing that ferromagnetic order is maintained up to room temperature: two different ferromagnetic phases were identified by the analysis of the field cooled - zero field cooled measurements.

  2. Microbeam high-resolution diffraction and x-ray standing wave methods applied to semiconductor structures

    International Nuclear Information System (INIS)

    Kazimirov, A; Bilderback, D H; Huang, R; Sirenko, A; Ougazzaden, A

    2004-01-01

    A new approach to conditioning x-ray microbeams for high angular resolution x-ray diffraction and scattering techniques is introduced. We combined focusing optics (one-bounce imaging capillary) and post-focusing collimating optics (miniature Si(004) channel-cut crystal) to generate an x-ray microbeam with a size of 10 μm and ultimate angular resolution of 14 μrad. The microbeam was used to analyse the strain in sub-micron thick InGaAsP epitaxial layers grown on an InP(100) substrate by the selective area growth technique in narrow openings between the oxide stripes. For the structures for which the diffraction peaks from the substrate and the film overlap, the x-ray standing wave technique was applied for precise measurements of the strain with a Δd/d resolution of better than 10 -4 . (rapid communication)

  3. High Efficiency Semiconductor Arrays for Hard X-Ray Imaging, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The next generation of wide-field survey instruments with improved angular and energy resolution for research into astrophysical transient X-ray phenomena is...

  4. Active silicon x-ray for measuring electron temperature

    International Nuclear Information System (INIS)

    Snider, R.T.

    1994-07-01

    Silicon diodes are commonly used for x-ray measurements in the soft x-ray region between a few hundred ev and 20 keV. Recent work by Cho has shown that the charge collecting region in an underbiased silicon detector is the depletion depth plus some contribution from a region near the depleted region due to charge-diffusion. The depletion depth can be fully characterized as a function of the applied bias voltage and is roughly proportional to the squart root of the bias voltage. We propose a technique to exploit this effect to use the silicon within the detector as an actively controlled x-ray filter. With reasonable silicon manufacturing methods, a silicon diode detector can be constructed in which the sensitivity of the collected charge to the impinging photon energy spectrum can be changed dynamically in the visible to above the 20 keV range. This type of detector could be used to measure the electron temperature in, for example, a tokamak plasma by sweeping the applied bias voltage during a plasma discharge. The detector samples different parts of the energy spectrum during the bias sweep, and the data collected contains enough information to determine the electron temperature. Benefits and limitations of this technique will be discussed along with comparisons to similar methods for measuring electron temperature and other applications of an active silicon x-ray filter

  5. High temperature GaAs X-ray detectors

    Science.gov (United States)

    Lioliou, G.; Whitaker, M. D. C.; Barnett, A. M.

    2017-12-01

    Two GaAs p+-i-n+ mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100 °C to -20 °C. The devices had 10 μm thick i layers with different diameters: 200 μm (D1) and 400 μm (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50 kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9 keV) decreased from 2.00 keV at 100 °C to 0.66 keV at -20 °C for the spectrometer with D1, and from 2.71 keV at 100 °C to 0.71 keV at -20 °C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise.

  6. Observing bose condensations of cooper pairs in semiconductor solid solutions (Pb1-xSnx)1-zInzTe

    International Nuclear Information System (INIS)

    Nemov, S.A.; Seregin, P.L.; Volkov, V.P.; Seregin, N.P.; Shamshur, D.V.

    2004-01-01

    It has been established using the emission Moessbauer spectroscopy method on the isotope 73 As( 73 Ge) that superconducting transition in the solid solutions (Pb 1-x Sn x ) 1-z In z Te (temperature of phase transition ∼ 4 K) leads to the change of the electron density in the metal sites, while in the anion sites no change in the electronic density has been observed [ru

  7. Temperature Modulation with Specified Detection Point on Metal Oxide Semiconductor Gas Sensors for E-Nose Application

    Directory of Open Access Journals (Sweden)

    Arief SUDARMAJI

    2015-03-01

    Full Text Available Temperature modulation technique, some called dynamic measurement mode, on Metal-Oxide Semiconductor (MOS/MOX gas sensor has been widely observed and employed in many fields. We present its development, a Specified Detection Point (SDP on modulated sensing element of MOS sensor is applied which associated to its temperature modulation, temperature modulation-SDP so-named. We configured the rectangular modulation signal for MOS gas sensors (TGSs and FISs using PSOC CY8C28445-24PVXI (Programmable System on Chip which also functioned as acquisition unit and interface to a computer. Initial responses and selectivity evaluations were performed using statistical tool and Principal Component Analysis (PCA to differ sample gases (Toluene, Ethanol and Ammonia on dynamic chamber measurement under various frequencies (0.25 Hz, 1 Hz, 4 Hz and duty-cycles (25 %, 50 %, 75 %. We found that at lower frequency the response waveform of the sensors becomes more sloping and distinct, and selected modulations successfully increased the selectivity either on singular or array sensors rather than static temperature measurement.

  8. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yan [Jilin Province Research Center for Engineering and Technology of Spectral Analytical Instruments, Jilin University, Changchun 130023 (China); Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yu Dongdong [1st Hopstail affiliated to Jilin University, Jilin University, Changchun 130023 (China); Zhou Jianguang [Research Center for Analytical Instrumentation, Zhejiang University, Hangzhou 310058 (China)], E-mail: liuxy@jlu.edu.cn, E-mail: jgzhou70@126.com

    2008-06-18

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  9. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    International Nuclear Information System (INIS)

    Liu Yan; Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang; Yu Dongdong; Zhou Jianguang

    2008-01-01

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals

  10. Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In(1-x)Fe(x))2O3.

    Science.gov (United States)

    Green, R J; Regier, T Z; Leedahl, B; McLeod, J A; Xu, X H; Chang, G S; Kurmaev, E Z; Moewes, A

    2015-10-16

    Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based electronics, but in most cases continue to elude explanations of their magnetic behavior. Here, we combine quantitative x-ray spectroscopy and Anderson impurity model calculations to study ferromagnetic Fe-substituted In2O3 films, and we identify a subset of Fe atoms adjacent to oxygen vacancies in the crystal lattice which are responsible for the observed room temperature ferromagnetism. Using resonant inelastic x-ray scattering, we map out the near gap electronic structure and provide further support for this conclusion. Serving as a concrete verification of recent theoretical results and indirect experimental evidence, these results solidify the role of impurity-vacancy coupling in oxide-based DMSs.

  11. Preparation of lead-tin telluride Pbsub(1-x)Snsub(x)Te at low temperature

    International Nuclear Information System (INIS)

    Gafni, G.

    1977-01-01

    A new method for the preparation of Pbsub(1-x)Snsub(x)Te at low temperature is described. The experiments were carried out in the concentration range 0.1 2 as solvent. The alloy obtained was a polycrystallized powder of 20-100 *mm. The material prepared in this way can be used as a source for the growth of single crystals for the manufacture of electro-optical devices. (B.G.)

  12. (TMTSF)2X materials and structural implications for low-dimensional polymeric and disordered molecular semiconductors

    DEFF Research Database (Denmark)

    Bechgaard, Klaus; Nielsen, Martin Meedom; Krebs, Frederik C

    2000-01-01

    The structural characteristics and the relation to the electronic properties of three types of molecular materials are discussed. In TMTSF2X salts a triclinic unit cell it suggested to be important in avoiding a 2k(F) Peierls distortion. In polythiophenes appropriate ordering of microcrystallites...

  13. Infrared properties of the organic semiconductor MEM(TCNQ)2 in its high-temperature phase

    DEFF Research Database (Denmark)

    Yartsev, V. M.; Jacobsen, Claus Schelde

    1981-01-01

    The infrared spectrum of N-methyl-N-ethylmorpholinium tetra-cyanoquinodimethane, MEM(TCNQ)2, at temperatures above the phase transition at T=335 K is reported. The oscillator strength associated with chargetransfer processes is shifted down in frequency as compared to the room-temperature phase. ...

  14. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  15. Thermoelectrically cooled semiconductor detectors for non-destructive analysis of works of art by means of energy dispersive X-ray fluorescence

    International Nuclear Information System (INIS)

    Cesareo, Roberto; Ettore Gigante, Giovanni; Castellano, Alfredo

    1999-01-01

    Thermoelectrically cooled semiconductor detectors, such as Si-PIN, Si-drift, Cd 1-x Zn x Te and HgI 2 , coupled to miniaturized low-power X-ray tubes, are well suited in portable systems for energy-dispersive X-ray fluorescence (EDXRF), analysis of archaeological samples. The Si-PIN detector is characterized by a thickness of about 300 μm, an area of about 2x3 mm 2 , an energy resolution of about 200-250 eV at 5.9 keV and an entrance window of 25-75 μm. The Si-drift detector has approximately the same area and thickness, but an energy resolution of 155 eV at 5.9 keV. The efficiency of these detectors is around 100% from 4 to 10 keV, and then decreases versus energy, reaching ∼9% at 30 keV. Coupled to a miniaturized 10 kV, 0.1 mA, Ca-anode or to a miniaturized 30 kV, 0.1 mA, W-anode X-ray tubes, portable systems can be constructed, which are able to analyse K-lines of elements up to about silver, and L-lines of heavy elements. The Cd 1-x Zn x Te detector has an area of 4 mm 2 and a thickness of 3 mm. It has an energy resolution of about 300 eV at 5.9 keV, and an efficiency of 100% over the whole range of X-rays. Finally the HgI 2 detector has an efficiency of about 100% in the whole range of X-rays, and an energy resolution of about 200 eV at 5.9 keV. Coupled to a small 50-60 kV, 1 mA, W-anode X-ray tube, portable systems can be constructed, for the analysis of practically all elements. These systems were applied to analysis in the field of archaeometry and in all applications for which portable systems are needed or at least useful (for example X-ray transmission measurements, X-ray microtomography and so on). Results of in-field use of these detectors and a comparison among these room temperature detectors in relation to concrete applications are presented. More specifically, concerning EDXRF analysis, ancient gold samples were analysed in Rome, in Mexico City and in Milan, ancient bronzes in Sassari, in Bologna, in Chieti and in Naples, and sulfur (due to

  16. Spin-polarized investigation of ferromagnetism on magnetic semiconductors MnxCa1−xS in the rock-salt phase

    International Nuclear Information System (INIS)

    Choutri, H.; Ghebouli, M.A.; Ghebouli, B.; Bouarissa, N.; Uçgun, E.; Ocak, H.Y.

    2014-01-01

    The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors Mn x Ca 1−x S in the rock-salt phase have been investigated using first-principles calculations with both LDA and LDA + U functional. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of Mn x Ca 1−x S is 4.4μ B and 4.5μ B for LDA and LDA + U functional and is independent of the Mn concentration. The unfilled Mn-3d levels reduce the local magnetic moment of Mn from its free space charge value of 5μ B –4.4μ B and4.5μ B for LDA and LDA + U functional due to 3p–3d hybridization. - Highlights: • Fundamental properties of magnetic semiconductors Mn x Ca 1−x S. • Rock-salt phase of Mn x Ca 1−x S. • Magnetic properties of the diluted magnetic semiconductors Mn x Ca 1−x S. • The use of LDA + U functionals

  17. Calorimetric low-temperature detectors on semiconductor base for the energy-resolving detection of heavy ions

    International Nuclear Information System (INIS)

    Kienlin, A. von.

    1994-01-01

    In the framework of this thesis for the first time calorimetric low-temperature detectors for the energy-resolving detection of heavy ions were developed and successfully applied. Constructed were two different detector types, which work both with a semiconductor thermistor. The temperature increasement effected by a particle incidence is read out. In the first detector type the thermistor was simutaneously used as absorber. The thickness of the germanium crystals was sufficient in order to stop the studied heavy ions completely. In the second type, a composed calorimeter, a sapphire crystal, which was glued on a germanium thermistor, served as absorber for the incident heavy ions. The working point of the calorimeter lies in the temperature range (1.2-4.2 K), which is reachable with a pumped 4 He cryostat. The temperatur increasement of the calorimeter amounts after the incidence of a single α particle about 20-30 μK and that after a heavy ion incidence up to some mK. An absolute energy resolution of 400-500 keV was reached. In nine beam times the calorimeters were irradiated by heavy ions ( 20 Ne, 40 Ar, 136 Xe, 208 Pb, 209 Bi) of different energies (3.6 MeV/nucleon< E<12.5 MeV/nucleon) elastically scattered from gold foils. In the pulse height spectra of the first detector type relatively broad, complex-structurated line shapes were observed. By systematic measurements dependences of the complex line structures on operational parameters of the detector, the detector temperature, and the position of the incident particle could be detected. Together with the results of further experiments a possible interpretation of these phenomena is presented. Contrarily to the complex line structures of the pure germanium thermistor the line shapes in the pulse height spectra, which were taken up in a composite germanium/sapphire calorimeter, are narrow and Gauss-shaped

  18. Single Ion transient-IBIC analyses of semiconductor devices using a cryogenic temperature stage

    International Nuclear Information System (INIS)

    Laird, J.S.; Bardos, R.; Legge, G.J.F.; Jagadish, C.

    1998-01-01

    A new Transient - IBIC data acquisition and analysis system at MARC is described. A discussion on the need for single ion control and temperature control is also given. The recorded signal is used as the trigger for beam pulsing. The new cryostatic temperature control stage is introduced. Data is presented on line profiles across the edge of a Au-Si junction collected over the temperature range of 25-300K using a developed C-V and I-V variable temperature stage incorporating a liquid helium cryostat. It demonstrates the potential improvements in spatial resolution in materials of long lifetime by mapping on timing windows around the prompt charge component in the charge transient

  19. Two carrier temperatures non-equilibrium generalized Planck law for semiconductors

    Science.gov (United States)

    Gibelli, François; Lombez, Laurent; Guillemoles, Jean-François

    2016-10-01

    Planck's law of radiation describes the light emitted by a blackbody. This law has been generalized in the past for the case of a non-blackbody material having a quasi Fermi-level splitting: the lattice of the material and the carriers are then considered in an isothermal regime. Hot carrier spectroscopy deals with carriers out of the isothermal regime, as their respective temperatures (THe ≠ THh) are considered to be different than that of the lattice (TL). Here we show that Fermi-Dirac distribution temperature for each type of carrier still determine an effective radiation temperature: an explicit relationship is given involving the effective masses. Moreover, we show how to determine, in principle with an additional approximation, the carrier temperatures (THe, THh) and the corresponding absolute electrochemical potentials from photoluminescence measurements.

  20. X-ray film interferometer as an instrument for semiconductor heterostructure investigation

    CERN Document Server

    Vasilenko, A P; Nikitenko, S G; Fedorov, A A; Sokolov, L V; Nikiforov, A I; Trukhanov, E M

    2001-01-01

    Translation Moire pictures were first observed in interference topographs obtained using Synchrotron radiation. A film interferometer was prepared on the base of the GeSi heterosystem. Another film interferometer, which presents the heterosystem of epitaxial Si/ porous Si/ substrate Si, permitted us to observe a decrease in the bending of the film atomic planes at annealing of the heterosystem. This bend smoothing was calculated with the sensitivity better than 1 A with the use of X-ray interference topographs. Contrast peculiarities in Moire pictures are discussed for nondiffracting layers and crystal quantum wells.

  1. High blocking temperature in SnO{sub 2} based super-paramagnetic diluted magnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Mounkachi, O., E-mail: o.mounkachi@mascir.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Salmani, E. [LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); El Moussaoui, H. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Masrour, R. [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, Safi (Morocco); Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Ez-Zahraouy, H. [LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

    2014-11-25

    Highlights: • Simple doping, (Sn,Fe)O{sub 2} exhibits a soft ferromagnetism at low temperature. • High blocking temperature was observed for Cu doped (Sn,Fe)O{sub 2} nanocrystalline. • Experimental results are confirmed by ab initio calculations. - Abstract: (Fe,Cu)-doped SnO{sub 2} nanocrystals was synthesized using the co-precipitation method. Magnetic Properties Measurement System (MPMS) revealed that for simple doping, Fe-doped SnO{sub 2} soft ferromagnetism at low temperature appears, while the ferromagnetic phase is stable at temperature higher than room temperature for Cu co-doping element. The ferromagnetism is significantly enhanced by the Cu addition to Fe-doped SnO{sub 2}, according to the ZFC and FC magnetizations and the hysteresis loops. The evidences for the existence of superparamagnetism are characterized and high blocking temperature super-paramagnetism in (Fe,Cu)-doped SnO{sub 2} nanocrystals was observed. Based on first-principles calculations, we have investigated electronic structures and magnetic properties of Fe-doped SnO{sub 2} and (Fe,Cu)-doped SnO{sub 2} with and without defect with LDA and LDA-SIC approximations. The results suggest that the oxygen vacancies (V{sub O}) play a critical role in the activation of ferromagnetism in Fe doped SnO{sub 2}. For (Fe,Cu)-doped SnO{sub 2} the results exhibit that Cu strongly influences on the magnetic properties of these doped systems which are in good agreement with the experimental observations. Electronic structure show that the presence of Cu promote the ferromagnetic bound magnetic polaron interaction through the carriers introduce by d (Cu)

  2. Relaxation dynamics of femtosecond-laser-induced temperature modulation on the surfaces of metals and semiconductors

    Czech Academy of Sciences Publication Activity Database

    Levy, Yoann; Derrien, Thibault; Bulgakova, Nadezhda M.; Gurevich, E.L.; Mocek, Tomáš

    2016-01-01

    Roč. 374, Jun (2016), s. 157-164 ISSN 0169-4332 R&D Projects: GA MŠk ED2.1.00/01.0027 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : LIPSS * modulated temperature relaxation * two-temperature model * nano-melting Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.387, year: 2016

  3. Zero thermal expansion and ferromagnetism in cubic Sc(1-x)M(x)F3 (M = Ga, Fe) over a wide temperature range.

    Science.gov (United States)

    Hu, Lei; Chen, Jun; Fan, Longlong; Ren, Yang; Rong, Yangchun; Pan, Zhao; Deng, Jinxia; Yu, Ranbo; Xing, Xianran

    2014-10-01

    The rare physical property of zero thermal expansion (ZTE) is intriguing because neither expansion nor contraction occurs with temperature fluctuations. Most ZTE, however, occurs below room temperature. It is a great challenge to achieve isotropic ZTE at high temperatures. Here we report the unconventional isotropic ZTE in the cubic (Sc1-xMx)F3 (M = Ga, Fe) over a wide temperature range (linear coefficient of thermal expansion (CTE), αl = 2.34 × 10(-7) K(-1), 300-900 K). Such a broad temperature range with a considerably negligible CTE has rarely been documented. The present ZTE property has been designed using the introduction of local distortions in the macroscopic cubic lattice by heterogeneous cation substitution for the Sc site. Even though the macroscopic crystallographic structure of (Sc0.85Ga0.05Fe0.1)F3 adheres to the cubic system (Pm3̅m) according to the results of X-ray diffraction, the local structure exhibits a slight rhombohedral distortion. This is confirmed by pair distribution function analysis of synchrotron radiation X-ray total scattering. This local distortion may weaken the contribution from the transverse thermal vibration of fluorine atoms to negative thermal expansion, and thus may presumably be responsible for the ZTE. In addition, the present ZTE compounds of (Sc1-xMx)F3 can be functionalized to exhibit high-Tc ferromagnetism and a narrow-gap semiconductor feature. The present study shows the possibility of obtaining ZTE materials with multifunctionality in future work.

  4. Electronic Structure of the Organic Semiconductor Alq3 (aluminum tris-8-hydroxyquinoline) from Soft X-ray Spectroscopies and Density Functional Theory Calculations

    Energy Technology Data Exchange (ETDEWEB)

    DeMasi, A.; Piper, L; Zhang, Y; Reid, I; Wang, S; Smith, K; Downes, J; Pelkekis, N; McGuinness, C; Matsuura, A

    2008-01-01

    The element-specific electronic structure of the organic semiconductor aluminum tris-8-hydroxyquinoline (Alq3) has been studied using a combination of resonant x-ray emission spectroscopy, x-ray photoelectron spectroscopy, x-ray absorption spectroscopy, and density functional theory (DFT) calculations. Resonant and nonresonant x-ray emission spectroscopy were used to measure directly the carbon, nitrogen and oxygen 2p partial densities of states in Alq3, and good agreement was found with the results of DFT calculations. Furthermore, resonant x-ray emission at the carbon K-edge is shown to be able to measure the partial density of states associated with individual C sites. Finally, comparison of previous x-ray emission studies and the present data reveal the presence of clear photon-induced damage in the former.

  5. Electronic structure of the organic semiconductor Alq3 (aluminum tris-8-hydroxyquinoline) from soft x-ray spectroscopies and density functional theory calculations.

    Science.gov (United States)

    DeMasi, A; Piper, L F J; Zhang, Y; Reid, I; Wang, S; Smith, K E; Downes, J E; Peltekis, N; McGuinness, C; Matsuura, A

    2008-12-14

    The element-specific electronic structure of the organic semiconductor aluminum tris-8-hydroxyquinoline (Alq(3)) has been studied using a combination of resonant x-ray emission spectroscopy, x-ray photoelectron spectroscopy, x-ray absorption spectroscopy, and density functional theory (DFT) calculations. Resonant and nonresonant x-ray emission spectroscopy were used to measure directly the carbon, nitrogen and oxygen 2p partial densities of states in Alq(3), and good agreement was found with the results of DFT calculations. Furthermore, resonant x-ray emission at the carbon K-edge is shown to be able to measure the partial density of states associated with individual C sites. Finally, comparison of previous x-ray emission studies and the present data reveal the presence of clear photon-induced damage in the former.

  6. Synthesis, optical properties and photostability of novel fluorinated organic–inorganic hybrid (R–NH3)2PbX4 semiconductors

    International Nuclear Information System (INIS)

    Wei, Y; Lauret, J-S; Deleporte, E; Audebert, P; Galmiche, L

    2013-01-01

    We report on the synthesis and the optical properties of several novel semiconductors (R–NH 3 ) 2 PbX 4 (X = Br − , I − or Cl − ). These semiconductors are two-dimensional organic–inorganic perovskite (2DOIP) materials and have multiple quantum-well energy level structures. We vary the organic components (R-NH 3 + ), introducing fluorine atoms into the organic part, on the phenyl ring of the amine. We discuss its influence on the self-organization ability and long-term photostability of the 2DOIPs. The trends of introducing fluorine atoms on the self-organization and long-term photostability of 2DOIPs are obtained by analysing the optical experimental results, and show that the influence of the fluorine position on the benzene ring is quite important. The most promising compounds seem to be the ones with the fluorine atom sitting on the para position of the phenyl group. (paper)

  7. Electron energy loss spectroscopy of excitons in two-dimensional-semiconductors as a function of temperature

    KAUST Repository

    Tizei, Luiz H. G.; Lin, Yung-Chang; Lu, Ang-Yd; Li, Lain-Jong; Suenaga, Kazu

    2016-01-01

    We have explored the benefits of performing monochromated Electron Energy Loss Spectroscopy(EELS) in samples at cryogenic temperatures. As an example, we have observed the excitonic absorption peaks in single layer Transition Metal Dichalcogenides. These peaks appear separated by small energies due to spin orbit coupling. We have been able to distinguish the split for MoS2 below 300 K and for MoSe2 below 220 K. However, the distinction between peaks is only clear at 150 K. We have measured the change in absorption threshold between 150 K and 770 K for MoS2 and MoSe2. We discuss the effect of carbon and ice contamination in EELSspectra. The increased spectral resolution available made possible with modern monochromators in electron microscopes will require the development of stable sample holders which reaches temperatures far below that of liquid nitrogen.

  8. Electron energy loss spectroscopy of excitons in two-dimensional-semiconductors as a function of temperature

    KAUST Repository

    Tizei, Luiz H. G.

    2016-04-21

    We have explored the benefits of performing monochromated Electron Energy Loss Spectroscopy(EELS) in samples at cryogenic temperatures. As an example, we have observed the excitonic absorption peaks in single layer Transition Metal Dichalcogenides. These peaks appear separated by small energies due to spin orbit coupling. We have been able to distinguish the split for MoS2 below 300 K and for MoSe2 below 220 K. However, the distinction between peaks is only clear at 150 K. We have measured the change in absorption threshold between 150 K and 770 K for MoS2 and MoSe2. We discuss the effect of carbon and ice contamination in EELSspectra. The increased spectral resolution available made possible with modern monochromators in electron microscopes will require the development of stable sample holders which reaches temperatures far below that of liquid nitrogen.

  9. Room temperature ferromagnetism in Fe-doped semiconductor ZrS2 single crystals

    Science.gov (United States)

    Muhammad, Zahir; Lv, Haifeng; Wu, Chuanqiang; Habib, Muhammad; Rehman, Zia ur; Khan, Rashid; Chen, Shuangming; Wu, Xiaojun; Song, Li

    2018-04-01

    Two dimensional (2D) layered magnetic materials have obtained much attention due to their intriguing properties with a potential application in the field of spintronics. Herein, room-temperature ferromagnetism with 0.2 emu g‑1 magnetic moment is realized in Fe-doped ZrS2 single crystals of millimeter size, in comparison with diamagnetic behaviour in ZrS2. The electron paramagnetic resonance spectroscopy reveals that 5.2wt% Fe-doping ZrS2 crystal exhibit high spin value of g-factor about 3.57 at room temperature also confirmed this evidence, due to the unpaired electrons created by doped Fe atoms. First principle static electronic and magnetic calculations further confirm the increased stability of long range ferromagnetic ordering and enhanced magnetic moment in Fe-doped ZrS2, originating from the Fe spin polarized electron near the Fermi level.

  10. High temperature x-ray micro-tomography

    Energy Technology Data Exchange (ETDEWEB)

    MacDowell, Alastair A., E-mail: aamacdowell@lbl.gov; Barnard, Harold; Parkinson, Dilworth Y.; Gludovatz, Bernd [Lawrence Berkeley National Lab., Berkeley, CA 94720 (United States); Haboub, Abdel [Lawrence Berkeley National Lab., Berkeley, CA 94720 (United States); current –Lincoln Univ., Jefferson City, Missouri, 65101 (United States); Larson, Natalie; Zok, Frank [University California Santa Barbara, Santa Barbara CA 93106 (United States); Panerai, Francesco; Mansour, Nagi N. [NASA Ames Research Centre, Moffett Field, CA, 94035 (United States); Bale, Hrishikesh [University California Berkeley, Berkeley, CA 94720 (United States); current - Carl Zeiss X-ray Microscopy, 4385 Hopyard Rd #100, Pleasanton, CA 94588 (United States); Acevedo, Claire [Lawrence Berkeley National Lab., Berkeley, CA 94720 (United States); University California San Francisco, San Francisco, CA 94143 (United States); Liu, Dong [University of Bristol, Bristol BS8 1TH (United Kingdom); Ritchie, Robert O. [Lawrence Berkeley National Lab., Berkeley, CA 94720 (United States); University California Berkeley, Berkeley, CA 94720 (United States)

    2016-07-27

    There is increasing demand for 3D micro-scale time-resolved imaging of samples in realistic - and in many cases extreme environments. The data is used to understand material response, validate and refine computational models which, in turn, can be used to reduce development time for new materials and processes. Here we present the results of high temperature experiments carried out at the x-ray micro-tomography beamline 8.3.2 at the Advanced Light Source. The themes involve material failure and processing at temperatures up to 1750°C. The experimental configurations required to achieve the requisite conditions for imaging are described, with examples of ceramic matrix composites, spacecraft ablative heat shields and nuclear reactor core Gilsocarbon graphite.

  11. Single Photon, Spin, and Charge in Diamond Semiconductor at room temperature

    International Nuclear Information System (INIS)

    Yuki Doi

    2014-01-01

    The nitrogen-vacancy (NV) center in diamond is a promising candidate for a qubit driven at room temperature. In order to derive potential of NV center, manipulation of their charge state is a very important topic. Here we succeeded to electrically control between single NV-/NV0 by means of current injection. This method allows us to very stable charge state control. (author)

  12. Simulation of photon and charge transport in X-ray imaging semiconductor sensors

    CERN Document Server

    Nilsson, H E; Hjelm, M; Bertilsson, K

    2002-01-01

    A fully stochastic model for the imaging properties of X-ray silicon pixel detectors is presented. Both integrating and photon counting configurations have been considered, as well as scintillator-coated structures. The model is based on three levels of Monte Carlo simulations; photon transport and absorption using MCNP, full band Monte Carlo simulation of charge transport and system level Monte Carlo simulation of the imaging performance of the detector system. In the case of scintillator-coated detectors, the light scattering in the detector layers has been simulated using a Monte Carlo method. The image resolution was found to be much lower in scintillator-coated systems due to large light spread in thick scintillator layers. A comparison between integrating and photon counting readout methods shows that the image resolution can be slightly enhanced using a photon-counting readout. In addition, the proposed model has been used to study charge-sharing effects on the energy resolution in photon counting dete...

  13. Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors

    Science.gov (United States)

    Sengupta, Parijat; Tan, Yaohua; Klimeck, Gerhard; Shi, Junxia

    2017-10-01

    We study the low temperature thermal conductivity of single-layer transition metal dichalcogenides (TMDCs). In the low temperature regime where heat is carried primarily through transport of electrons, thermal conductivity is linked to electrical conductivity through the Wiedemann-Franz law (WFL). Using a k.p Hamiltonian that describes the K and K{\\prime} valley edges, we compute the zero-frequency electric (Drude) conductivity using the Kubo formula to obtain a numerical estimate for the thermal conductivity. The impurity scattering determined transit time of electrons which enters the Drude expression is evaluated within the self-consistent Born approximation. The analytic expressions derived show that low temperature thermal conductivity (1) is determined by the band gap at the valley edges in monolayer TMDCs and (2) in presence of disorder which can give rise to the variable range hopping regime, there is a distinct reduction. Additionally, we compute the Mott thermopower and demonstrate that under a high frequency light beam, a valley-resolved thermopower can be obtained. A closing summary reviews the implications of results followed by a brief discussion on applicability of the WFL and its breakdown in context of the presented calculations.

  14. X-ray analysis of spintronic semiconductor and half metal thin film systems; Roentgenstrukturuntersuchungen an spintronischen Halbleiter- und Halbmetall-Duennschichtsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Stahl, Andreas

    2010-07-01

    In this work the structural properties of spintronic semiconductor and halfmetalic thin-film systems were investigated. The layer thicknesses and interface roughnesses of the multi-layer systems were estimated by X-ray reflectivity measurements. The fits were performed using the software Fewlay which uses the Parratt formalism to calculate the reflectivities. The relaxation of the films was analyzed by reciprocal space mapping on preferably highly indexed Bragg reflexes. (orig.)

  15. Temperature-induced delocalization of charge carriers and semiconductor to metal-like phase in SrFeO{sub 3-δ}

    Energy Technology Data Exchange (ETDEWEB)

    Manimuthu, P.; Venkateswaran, C. [University of Madras, Department of Nuclear Physics, Guindy Campus, Chennai (India); Murugaraj, R. [Anna University, Department of Physics, MIT Campus, Chennai (India)

    2015-04-01

    Perovskite SrFeO{sub 3-δ}, a Ruddlesden-Popper class of system exhibits interesting electronic and magnetic properties. Influence of oxygen vacancies on the electrical response of nanocrystalline SrFeO{sub 2.91} as a function of temperature is investigated using impedance spectroscopy technique. A change observed in the Nyquist plot at 383 K has been analyzed in terms of localized and delocalized e{sub g} electrons. An unusual and interesting temperature-induced semiconductor to metal-like transition is observed in the frequency-dependent real part of dielectric permittivity. Dependence of frequency on the real and imaginary parts of impedance with respect to temperature supports the presence of semiconductor to metal-like transition in SrFeO{sub 2.91}. (orig.)

  16. X-ray spectroscopy for high energy-density X pinch density and temperature measurements (invited)

    International Nuclear Information System (INIS)

    Pikuz, S.A.; Shelkovenko, T.A.; Chandler, K.M.; Mitchell, M.D.; Hammer, D.A.; Skobelev, I.Y.; Shlyaptseva, A.S.; Hansen, S.B.

    2004-01-01

    X pinch plasmas produced from fine metal wires can reach near solid densities and temperatures of 1 keV or even more. Plasma conditions change on time scales as short as 5-10 ps as determined using an x-ray streak camera viewing a focusing crystal spectrograph or directly viewing the plasma through multiple filters on a single test. As a result, it is possible to determine plasma conditions from spectra with ∼10 ps time resolution. Experiments and theory are now coming together to give a consistent picture of the dynamics and kinetics of these high energy density plasmas with very high temporal and spatial precision. A set of diagnostic techniques used in experiments for spectrally, temporally, and spatially resolved measurements of X pinch plasmas is described. Results of plasma parameter determination from these measurements are presented. X ray backlighting of one x-pinch by another with ∼30 ps x-ray pulses enables the dynamics and kinetics to be correlated in time

  17. Some physical properties of GaX (X=P, As and Sb) semiconductor compounds using higher-order perturbation theory

    International Nuclear Information System (INIS)

    Jivani, A.R.; Trivedi, H.J.; Gajjar, P.N.; Jani, A.R.

    2005-01-01

    Recently proposed model potential for describing the electron-ion interaction is employed to calculate total energy, energy band gap at Jones-zone face at X, equation of state and bulk modulus of GaP, GaAs and GaSb compounds using higher-order perturbation theory. The covalent correction term corresponding to third- and fourth-order perturbation energy terms are used to take account of covalent bonding effect in such semiconductors. The significant value of the covalent bonding term shows the essentiality of higher-order correction for zincblende-type crystals. We have employed five different screening functions along with the latest screening function proposed by Sarkar et al. in the present work. The numerical results for the total energy, energy band gap at Jones-zone face and bulk modulus of these compounds are in good agreement with the experimental data and found better than other such theoretical findings. The pressure and bulk modulus at different volumes are obtained by using such higher-order perturbation theory with the application of our model potential. The pressure obtained by this method is compared with pressure obtained by equations proposed by Murnarghan and Vinet et al. The present study also shows that the incorporation of different screening functions generates distinct effects

  18. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

    Energy Technology Data Exchange (ETDEWEB)

    Korenev, V. V., E-mail: korenev@spbau.ru; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V. [Saint Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)

    2013-10-15

    It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

  19. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

    International Nuclear Information System (INIS)

    Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

    2013-01-01

    It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots

  20. Physical properties of Fe doped In_2O_3 magnetic semiconductor annealed in hydrogen at different temperature

    International Nuclear Information System (INIS)

    Baqiah, H.; Ibrahim, N.B.; Halim, S.A.; Chen, S.K.; Lim, K.P.; Kechik, M.M. Awang

    2016-01-01

    The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600 °C) on physical properties of In_2_−_xFe_xO_3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In_2O_3 phase structure when annealed in hydrogen at 300–500 °C, however when annealed in hydrogen at 600 °C the film has a mixed phase structure of In_2O_3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300–500 °C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300 °C has the lowest resistivity, ρ=0.03 Ω cm, and the highest carrier concentrations, n=6.8×10"1"9 cm"−"3, while film annealed at 500 °C has both good electrical (ρ=0.05 Ω.cm and n=2.2×10"1"9 cm"−"3) and magnetic properties, Ms=21 emu/cm"-"3. - Highlights: • Physical properties of films were sensitive to hydrogen-annealing temperature. • Magnetisation, Ms, of films increased with increase of hydrogen annealing temperature. • Film annealed in hydrogen at 300 °C has the lowest resistivity, ρ=0.03 Ω cm. • Film annealed in hydrogen at 600 °C has highest magnetisation, Ms=30 emu/cm"3.

  1. High temperature semiconductor diode laser pumps for high energy laser applications

    Science.gov (United States)

    Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

    2018-02-01

    Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

  2. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  3. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  4. Electronic structure of the dilute magnetic semiconductor G a1 -xM nxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

    Science.gov (United States)

    Keqi, A.; Gehlmann, M.; Conti, G.; Nemšák, S.; Rattanachata, A.; Minár, J.; Plucinski, L.; Rault, J. E.; Rueff, J. P.; Scarpulla, M.; Hategan, M.; Pálsson, G. K.; Conlon, C.; Eiteneer, D.; Saw, A. Y.; Gray, A. X.; Kobayashi, K.; Ueda, S.; Dubon, O. D.; Schneider, C. M.; Fadley, C. S.

    2018-04-01

    We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) G a0.98M n0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between G a0.98M n0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The G a0.98M n0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of G a0.97M n0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012), 10.1038/nmat3450], demonstrating the strong similarity between these two materials. The Mn 2 p and 3 s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.

  5. Structural and electronic properties of Ga{sub 1-x}In{sub x} As{sub 1-y}N{sub y} quaternary semiconductor alloy on GaAs substrate

    Energy Technology Data Exchange (ETDEWEB)

    Aslan, Metin, E-mail: maslan@sakarya.edu.tr [Sakarya University, Art, Science Faculty, Department of Physics, Esentepe Campus, 54187 Sakarya (Turkey); Yalc Latin-Small-Letter-Dotless-I n, Battal G.; Uestuendag, Mehmet [Sakarya University, Art, Science Faculty, Department of Physics, Esentepe Campus, 54187 Sakarya (Turkey)

    2012-04-05

    Highlights: Black-Right-Pointing-Pointer In this study we used DFT in the frame of LDA approach to determine electronic and structural properties of GaInAsN alloy. Black-Right-Pointing-Pointer We calculated lattice parameter and band gap energy of binary (GaAs, InAs, and GaN), ternary (GaInAs, GaAsN) and quaternary (GaInAsN) semiconductor alloys. Black-Right-Pointing-Pointer We formulated lattice parameter of GaInAsN respect to In and N composition. Black-Right-Pointing-Pointer We investigated different In and N composition of GaInAsN/GaAs heterostructure for various device applications. - Abstract: We have presented structural and electronic properties of binary (GaAs, GaN and InAs), ternary (Ga{sub 1-x}In{sub x}As and GaAs{sub 1-y}N{sub y}) and quaternary (Ga{sub 1-x}In{sub x}As{sub 1-y}N{sub y}) semiconductor alloys by using a first-principles pseudopotential technique. The structural and electronic properties of Zinc-Blende phase of these materials have been calculated by using the local density approximation (LDA) of the density-functional theory (DFT). To obtain the lattice parameter and band gap energy of the (GaInAsN) quaternary semiconductor alloy we separately calculated the lattice constant and band gap energies of ternary semiconductor alloys, namely GaAsN and GaInAs. The calculated lattice constant, bulk modulus and the direct band gaps for studied semiconductors showed great parallelism with the previous available theoretical and experimental studies.

  6. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  7. Molecular-beam epitaxy growth and structural characterization of semiconductor-ferromagnet heterostructures by grazing incidence X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Satapathy, D.K.

    2005-12-19

    The present work is devoted to the growth of the ferromagnetic metal MnAs on the semiconductor GaAs by molecular-beam epitaxy (MBE). The MnAs thin films are deposited on GaAs by molecular-beam epitaxy (MBE). Grazing incidence diffraction (GID) and reflection high-energy electron diffraction (RHEED) are used in situ to investigate the nucleation, evolution of strain, morphology and interfacial structure during the MBE growth. Four stages of the nucleation process during growth of MnAs on GaAs(001) are revealed by RHEED azimuthal scans. GID shows that further growth of MnAs films proceed via the formation of relaxed islands at a nominal thickness of 2.5 ML which increase in size and finally coalesce to form a continuous film. Early on, an ordered array of misfit dislocations forms at the interface releasing the misfit strain even before complete coalescence occurs. The fascinating complex nucleation process of MnAs on GaAs(0 0 1) contains elements of both Volmer-Weber and Stranski-Krastanov growth. A nonuniform strain amounting to 0.66%, along the [1 -1 0] direction and 0.54%, along the [1 1 0] direction is demonstrated from x-ray line profile analysis. A high correlation between the defects is found along the GaAs[1 1 0] direction. An extremely periodic array of misfit dislocations with a period of 4.95{+-}0.05 nm is formed at the interface along the [1 1 0] direction which releases the 7.5% of misfit. The inhomogeneous strain due to the periodic dislocations is confined at the interface within a layer of 1.6 nm thickness. The misfit along the [1 -1 0] direction is released by the formation of a coincidence site lattice. (orig.)

  8. Lattice location of impurities in semiconductors: a RBS/channeling and proton-induced x-ray emission study

    Energy Technology Data Exchange (ETDEWEB)

    Kringhoj, P [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

    1994-12-31

    Rutherford backscattering spectrometry (RBS)/channeling and proton-induced x-ray emission (PIXE) are two well established and characterised techniques. Over the last three decades RBS/channeling measurements has been performed to extract the substitutional fraction of impurities in both elemental and compound semiconductors. However, due to the limitation of RBS, only elements heavier than the host crystal can be examined (except for a few elements, where a nuclear reaction or a resonance can be used). In silicon this limitation is acceptable, due to the low mass of Si, but in the III-V compounds (e.g. InP), the technique is limited to a few elements of hardly no technological or fundamental interest. One can overcome this by combining RBS/channeling with PIXE, where PIXE is applied to detect elements with a mass lower than the host crystal. In the present work, the lattice location of Ge in InP has been studied and compared to the group-III impurity Ga, and the group-VI impurity Se which is known to be a donor. The (RBS)/channeling technique has been used to detect not only the substitutional fraction, but also the relative population of the two sublattices. The half-width is approximately equal to the characteristic angle, {psi}{sub 1}. The channeling data obtained indicate that all three dopants are located exclusively on substitutional sites and that Ga is occuping the In position, Se theP position and that Ge is distributed equally between both sublattices. 6 refs., 1 tab., 3 figs.

  9. Lattice location of impurities in semiconductors: a RBS/channeling and proton-induced x-ray emission study

    Energy Technology Data Exchange (ETDEWEB)

    Kringhoj, P. [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

    1993-12-31

    Rutherford backscattering spectrometry (RBS)/channeling and proton-induced x-ray emission (PIXE) are two well established and characterised techniques. Over the last three decades RBS/channeling measurements has been performed to extract the substitutional fraction of impurities in both elemental and compound semiconductors. However, due to the limitation of RBS, only elements heavier than the host crystal can be examined (except for a few elements, where a nuclear reaction or a resonance can be used). In silicon this limitation is acceptable, due to the low mass of Si, but in the III-V compounds (e.g. InP), the technique is limited to a few elements of hardly no technological or fundamental interest. One can overcome this by combining RBS/channeling with PIXE, where PIXE is applied to detect elements with a mass lower than the host crystal. In the present work, the lattice location of Ge in InP has been studied and compared to the group-III impurity Ga, and the group-VI impurity Se which is known to be a donor. The (RBS)/channeling technique has been used to detect not only the substitutional fraction, but also the relative population of the two sublattices. The half-width is approximately equal to the characteristic angle, {psi}{sub 1}. The channeling data obtained indicate that all three dopants are located exclusively on substitutional sites and that Ga is occuping the In position, Se theP position and that Ge is distributed equally between both sublattices. 6 refs., 1 tab., 3 figs.

  10. Preparation and characterization of semiconductor thin film cells of n-CdSe and CdSel-x Tex. Application in solar cells of liquid union

    International Nuclear Information System (INIS)

    Gutierrez, M.A.

    1987-01-01

    The development of the new energy sources, constitutes one of the most active and changing investigation areas of nowday. Within this frame, the conservation of photovoltaic solar energy, has taken a particular importance, as these systems become directly the photovoltaic solar energy, which incises on a semiconductor, in electric energy. In spite of this advantage, the use of photovoltaic systems is limited, being the main reason for this, the still high cost of the devices. One of the objectives of this Memory is to contribute to the reduction of these photovoltaic devices by using available methods for the preparation of photosensitive material, and for the union formation. The chosen preparation method is the electrochemical one and the electric field is made up in the interphase semiconductor/electrolyte, dipping the semiconductor in a convenient electrolyte. Summarizing, it can be said that the Memory's objetive presented is to discover the experiences realized in the electrochemical preparation of the n-CdSel-x Tex and its characterization by chemical analysis, X-rays difraction, electronic microscope of swept, optical techniques and photoelectrochemical methods. From the data obtained with these techniques, a study of the physical parameters evolution which determine the photovoltaic properties of the semiconductor, is made, as: the concentration of minoritary carriers, ND, and the diffusion length of these carriers, LP. Finally, taking into account the results obtained by the characterization of n-CdSe and CdSel-x Tex, is made from the construction of the photoelectrochemical cell, using two kinds of electrolyte: sulfide- polysulfide ands ferro-ferricyanide. (Author)

  11. Theory of tamm surface states on the boundary between Hgsub(1-x)Cdsub(x)Te type semimetal and narrow-gap semiconductor

    International Nuclear Information System (INIS)

    Mekhtiyev, M.A.; Kalina, V.A.

    1980-01-01

    The conditions of appearance of tamm surface states and their energy spectrum on the boundary of semimetals and narrow-gap semiconductors are considered. By the Green function method the equation for surface state energy is obtained. The solution of the latter is analyzed in particular cases when energy of heavy hole zones of the semimetal and semiconductor is the same and when the heavy hole gap of the semiconductor is shifted down relatively to the semimetal of the same name gap as well as accurate computer calculation. It is shown that neither in parabolic limits, nor in cases of a strongly unparabolic semiconductor (semimetal) and a parabolic semimetal (semiconductor) the equation obtained has no solutions at small quasipulse values i.e. there are no surface states. In the case when the heavy hole zone of a semiconductor is shifted down for the value of the order of narrow-gap semiconductor the effective mass of surface states turns to be twice heavier than that of the semimetal volumetrical electrons [ru

  12. Determination of band-structure parameters of Pbsub(1-x)Snsub(x)Te narrow-gap semiconductor from infrared Faraday rotation

    International Nuclear Information System (INIS)

    Sizov, F.F.; Lashkarev, G.V.; Martynchuk, E.K.

    1977-01-01

    The temeprature dependences of Faraday rotation in Pbsub(1-x)Snsub(x)Te of p type with the hole density 3x10 16 -2.2x10 18 cm -3 are studied in the range 40-370 K and in the spectral interval 4-16 μm. The analysis of interband Faraday rotation confirms a conclusion made by the authors earlier that the g factor for the c band (gsub(c)) is positive, for the v band (gsub(v))-negative and that [gsub(c)] > [gsub(v)]. The temperature dependences of carrier effective masses are investigated on the basis of the two-band model. It is demonstrated that for T < 200 K the Faraday effective mass of holes near the ceiling of the valency band varies in direct proportion to the width of the forbidden band. The temperature increase of the Faraday effective mass of current carriers, which is faster than that of the effective electron mass, is discovered, and this is related to the effect of the heavy hole band

  13. Development of a scanning nearfield optical microscope for low-temperature investigations of semiconductor nanostructures

    International Nuclear Information System (INIS)

    Hodeck, Kai Friedrich

    2009-01-01

    In the present work the electronic structure of MOCVD-grown InGaAs/GaAs and InAs/GaAs quantum dots which are characterized by a particularly low ground state transition energy, was investigated using Scanning Nearfield Optical Microscopy (SNOM). The pivotal question of the presented investigations is, which influence the interaction of the confined carriers has on the energy states of the biexcitons and the multiexcitons in a quantum dot. Therefore, photoluminescence spectra of single quantum dots were investigated under varying excitation intensity at different temperatures between 5 K and 300 K. The construction of a novel scanning nearfield microscope especially for low temperatures allowed the investigation of single quantum dots. Due to significant improvements of the positioning technology and the shear-force distance control between the sample and the nearfield probe a stable scanning of the quantum dot samples at 5 K could be demonstrated, showing a lateral optical resolution of 200 nm. This way, in the photoluminescence spectroscopy of single quantum dots the thermal linewidth broadening of the detected light was reduced down to a value of less than 1 meV, which allowed the identification of the transitions of biexcitons and multiexcitons. On the basis of the performed measurements, for the InGaAs/GaAs quantum dots a biexciton state was identified, with variable binding energies of 2-7 meV. Furthermore, a positively charged trion state with a binding energy of 11 meV was observed, showing high emission intensity, which can be assigned to the sample doping. Accordingly, for the positively charged biexciton state a binding energy of 11 meV can be announced. For the investigated InAs/GaAs quantum dots a biexciton state with binding energies of 3-4 meV was found. Some of the investigated InAs/GaAs quantum dots showed the formation of positively charged states, in particular of a trion state with a binding energy of 3 meV, and of the positively charged

  14. Development of a scanning nearfield optical microscope for low-temperature investigations of semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Hodeck, Kai Friedrich

    2009-02-19

    In the present work the electronic structure of MOCVD-grown InGaAs/GaAs and InAs/GaAs quantum dots which are characterized by a particularly low ground state transition energy, was investigated using Scanning Nearfield Optical Microscopy (SNOM). The pivotal question of the presented investigations is, which influence the interaction of the confined carriers has on the energy states of the biexcitons and the multiexcitons in a quantum dot. Therefore, photoluminescence spectra of single quantum dots were investigated under varying excitation intensity at different temperatures between 5 K and 300 K. The construction of a novel scanning nearfield microscope especially for low temperatures allowed the investigation of single quantum dots. Due to significant improvements of the positioning technology and the shear-force distance control between the sample and the nearfield probe a stable scanning of the quantum dot samples at 5 K could be demonstrated, showing a lateral optical resolution of 200 nm. This way, in the photoluminescence spectroscopy of single quantum dots the thermal linewidth broadening of the detected light was reduced down to a value of less than 1 meV, which allowed the identification of the transitions of biexcitons and multiexcitons. On the basis of the performed measurements, for the InGaAs/GaAs quantum dots a biexciton state was identified, with variable binding energies of 2-7 meV. Furthermore, a positively charged trion state with a binding energy of 11 meV was observed, showing high emission intensity, which can be assigned to the sample doping. Accordingly, for the positively charged biexciton state a binding energy of 11 meV can be announced. For the investigated InAs/GaAs quantum dots a biexciton state with binding energies of 3-4 meV was found. Some of the investigated InAs/GaAs quantum dots showed the formation of positively charged states, in particular of a trion state with a binding energy of 3 meV, and of the positively charged

  15. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  16. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  17. Study of Ni50+xMn25Ga25-x (x = 2-11) as high-temperature shape-memory alloys

    International Nuclear Information System (INIS)

    Ma Yunqing; Jiang Chengbao; Li Yan; Xu Huibin; Wang Cuiping; Liu Xingjun

    2007-01-01

    Ni 50+x Mn 25 Ga 25-x (x = 2-11) alloys were studied as high-temperature shape-memory alloys, with regard to their microstructure, martensitic transformation behavior and high-temperature shape-memory effect. Single phase of martensite with tetragonal structure was present for x p increase monotonically from 39.1 deg. C for x = 2 to 443.8 deg. C for x = 7, then remain almost constant at 440 deg. C for x ≥ 7. The shape-memory strains of the alloys decreased gradually from 6.1% for x = 4 to 2.8% for x = 8 and 0% for x = 11 under the same pre-strain. The variations of the martensitic transformation temperatures and the shape-memory effects with Ni contents correlate with changes in size factor, electron concentration and precipitation of γ phase

  18. Effect of temperature on terahertz photonic and omnidirectional band gaps in one-dimensional quasi-periodic photonic crystals composed of semiconductor InSb.

    Science.gov (United States)

    Singh, Bipin K; Pandey, Praveen C

    2016-07-20

    Engineering of thermally tunable terahertz photonic and omnidirectional bandgaps has been demonstrated theoretically in one-dimensional quasi-periodic photonic crystals (PCs) containing semiconductor and dielectric materials. The considered quasi-periodic structures are taken in the form of Fibonacci, Thue-Morse, and double periodic sequences. We have shown that the photonic and omnidirectional bandgaps in the quasi-periodic structures with semiconductor constituents are strongly depend on the temperature, thickness of the constituted semiconductor and dielectric material layers, and generations of the quasi-periodic sequences. It has been found that the number of photonic bandgaps increases with layer thickness and generation of the quasi-periodic sequences. Omnidirectional bandgaps in the structures have also been obtained. Results show that the bandwidths of photonic and omnidirectional bandgaps are tunable by changing the temperature and lattice parameters of the structures. The generation of quasi-periodic sequences can also change the properties of photonic and omnidirectional bandgaps remarkably. The frequency range of the photonic and omnidirectional bandgaps can be tuned by the change of temperature and layer thickness of the considered quasi-periodic structures. This work will be useful to design tunable terahertz PC devices.

  19. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  20. Semiconductor-to-metallic flipping in a ZnFe{sub 2}O{sub 4}–graphene based smart nano-system: Temperature/microwave magneto-dielectric spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ameer, Shahid, E-mail: shahidameer@scme.nust.edu.pk [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan); Gul, Iftikhar Hussain [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan); Mahmood, Nasir [Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871 (China); Mujahid, Muhammad [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan)

    2015-01-15

    Zn-(FeO{sub 2}){sub 2}–graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis with different percentages of graphene. The structure of the nanocomposite was confirmed through X-ray diffraction, micro-Raman scattering spectroscopy, Ultraviolet–Visible spectroscopy, and Fourier transform infrared spectroscopy. The structural growth and morphological aspects were analyzed using scanning/transmission electron microscopy, revealing marvelous micro-structural features of the assembled nano-system resembling a maple leaf. To determine the composition, energy dispersive spectroscopy and X-ray photoelectron spectroscopy were used. Microwave magneto-dielectric spectroscopy revealed the improved dielectric properties of the nano-composite compared to those of the parent functional nanocrystals. Temperature gradient dielectric spectroscopy was used over the spectral range from 100 Hz to 5 MHz to reveal the phenomenological effect that the nanosystem flips from its usual semiconductor nature to a metallic nature with sensing temperature. Electrical conductivity and dielectric analysis indicated that the dielectric loss and the dielectric permittivity increased at room temperature. This extraordinary switching capability of the functionalized graphene nanosystem opens up a new dimension for engineering advanced and efficient smart composite materials. - Graphical abstract: Display Omitted - Highlights: • Zn-(FeO{sub 2}){sub 2}–graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis. • The synthesized nano-system exhibits marvelous leaf like microstructure. • These nano-composites show improved magneto dielectric response. • This engineered smart nano-system shows phenomenological flipping from semiconductor like nature to metallic behavior.

  1. SOME PHYSICOCHEMICAL PROPERTIES OF OCTYLPHENOL ETHOXYLATE NONIONICS (TRITON X-100, TRITON X-114 AND TRITON X-405 AND THE TEMPERATURE EFFECT ON THIS PROPERTIES

    Directory of Open Access Journals (Sweden)

    Taliha Sidim

    2016-11-01

    Full Text Available Surface tensions and condutvities of aqueous solutions of nonionic surfactants at various concentrations were measured at diffferent temperatures.The critical micelle concentration (CMC of aqueous solutions of three different octylphenol ethoxylate nonionics(Triton X-114, Triton X-100 and Triton X-405 are determined at different temperatures.The effect of the ethylene oxide chain length and temperature on the CMC is also determined.

  2. Positron annihilation and Wheeler complexes in semiconductors

    International Nuclear Information System (INIS)

    Prokop'ev, E.P.

    1995-01-01

    Properties of Ps-Ex (positron-exciton) complex nature Wheeler complexes that may be formed at irradiation of semiconductors and ion crystals by positrons at low temperature under conditions of optical excitation by excitons are studied. Binding energy of similar and more complex systems regarding decomposition in Ps and Ex and/or Ex ± exceeds, at least, 0.1 eV, while lifetime regarding biquantum-self-annihilation constitutes τ 2γ ∼5.02x10 - 10 κ c 3 c (κ c -phenomenological parameter of the effective mass method). The lifetime estimations enabled to conclude that Ps-Ex complexes may be detected in some oxide semiconductors, in zinc sulfide, as well as, in alkaline-haloid crystals. At the same time, in silicon, gallium arsenide and in other semiconductors of A 3 B 5 and A 2 B 6 it is highly improbable to observe these complexes. 27 refs

  3. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  4. Parallel of semi-empirical results simulated by MCNP of X-ray spectra with a semiconductor; Paralelo de resultado semi- empiricos simulados por MCNPX de espectros de raios-X com um semicondutor

    Energy Technology Data Exchange (ETDEWEB)

    Santos, L.R.; Vivolo, V.; Potiens, M.P.A., E-mail: dossantos.lucasrodrigues@gmail.com [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Navarro, M.V.T.; Santos, W.S. [Universidade Federal de Uberlandia (INFIS/UFU), MG (Brazil). Instituto de Fisica

    2016-07-01

    The aim of this study was to use the MCNPX radiation transport code to simulate X-ray spectra generated by a constant voltage system in a CdTe semiconductor detector. As part of the validation process, we obtained a series of experimental spectra. Comparatively, in all cases there is a good correlation between the two spectra. There were no statistically significant differences between the experimental results with the simulated. (author)

  5. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  6. Thermoelectrically cooled semiconductor detectors for non-destructive analysis of works of art by means of energy dispersive X-ray fluorescence

    CERN Document Server

    Cesareo, R; Castellano, A

    1999-01-01

    Thermoelectrically cooled semiconductor detectors, such as Si-PIN, Si-drift, Cd sub 1 sub - sub x Zn sub x Te and HgI sub 2 , coupled to miniaturized low-power X-ray tubes, are well suited in portable systems for energy-dispersive X-ray fluorescence (EDXRF), analysis of archaeological samples. The Si-PIN detector is characterized by a thickness of about 300 mu m, an area of about 2x3 mm sup 2 , an energy resolution of about 200-250 eV at 5.9 keV and an entrance window of 25-75 mu m. The Si-drift detector has approximately the same area and thickness, but an energy resolution of 155 eV at 5.9 keV. The efficiency of these detectors is around 100% from 4 to 10 keV, and then decreases versus energy, reaching approx 9% at 30 keV. Coupled to a miniaturized 10 kV, 0.1 mA, Ca-anode or to a miniaturized 30 kV, 0.1 mA, W-anode X-ray tubes, portable systems can be constructed, which are able to analyse K-lines of elements up to about silver, and L-lines of heavy elements. The Cd sub 1 sub - sub x Zn sub x Te detector ha...

  7. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  8. Low temperature X-ray imaging of magnetic flux patterns in high temperature superconductors

    Science.gov (United States)

    Stahl, Claudia; Ruoß, Stephen; Weigand, Markus; Bechtel, Michael; Schütz, Gisela; Albrecht, Joachim

    2015-05-01

    We present X-ray magnetic circular dichroism (XMCD) microscopy results obtained at liquid nitrogen temperatures on the high-Tc superconductor YBCO (YBa2Cu3O7-δ). The magnetic flux distribution arising from electric currents in the superconductor is detected and visualized using soft-magnetic Co40Fe40B20 (CoFeB) as sensor layer and XMCD as contrast mechanism. It has been shown that the XMCD contrast in the sensor layer directly corresponds to magnetic flux distribution of the superconductor and hence can be used to image magnetic structures in superconductors [Stahl et al., Phys. Rev. B 90, 104515 (2014)]. The existing scanning UHV X-ray microscopy setup MAXYMUS at the synchrotron BESSY II in Berlin has been upgraded for that purpose: we use a nitrogen based MMR Micro Miniature Joule-Thompson Cryostat with temperature range from 75 K to 580 K. The capability of the method is demonstrated on two different superconducting samples, an optimally doped thin film and a melt-textured block.

  9. Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure.

    Science.gov (United States)

    Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Jana, Surajit; Roy, Anisha; Singh, Kanishk; Cheng, Hsin-Ming; Chang, Mu-Tung; Mahapatra, Rajat; Chiu, Hsien-Chin; Yang, Jer-Ren

    2016-12-01

    A 15-nm-thick GdO x membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H2O2) detection than those of the bare SiO2 and 3-nm-thick GdO x membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO x films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO x membrane, polycrystalline grain has lower energy gap and Gd(2+) oxidation states lead to change Gd(3+) states in the presence of H2O2, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO x membrane with higher Gd content are responsible for detecting H2O2 whereas both bare SiO2 and thinner GdO x membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H2O2 concentration from 1 to 200 μM owing to more generation of Gd(3+) ions, and the H2O2 sensing mechanism has been explained as well.

  10. A primary exploration to quasi-two-dimensional rare-earth ferromagnetic particles: holmium-doped MoS2 sheet as room-temperature magnetic semiconductor

    Science.gov (United States)

    Chen, Xi; Lin, Zheng-Zhe

    2018-05-01

    Recently, two-dimensional materials and nanoparticles with robust ferromagnetism are even of great interest to explore basic physics in nanoscale spintronics. More importantly, room-temperature magnetic semiconducting materials with high Curie temperature is essential for developing next-generation spintronic and quantum computing devices. Here, we develop a theoretical model on the basis of density functional theory calculations and the Ruderman-Kittel-Kasuya-Yoshida theory to predict the thermal stability of two-dimensional magnetic materials. Compared with other rare-earth (dysprosium (Dy) and erbium (Er)) and 3 d (copper (Cu)) impurities, holmium-doped (Ho-doped) single-layer 1H-MoS2 is proposed as promising semiconductor with robust magnetism. The calculations at the level of hybrid HSE06 functional predict a Curie temperature much higher than room temperature. Ho-doped MoS2 sheet possesses fully spin-polarized valence and conduction bands, which is a prerequisite for flexible spintronic applications.

  11. Evidence of Room Temperature Ferromagnetism Due to Oxygen Vacancies in (In1- x Fe x )2O3 Thin Films

    Science.gov (United States)

    Chakraborty, Deepannita; Munuswamy, Kuppan; Shaik, Kaleemulla; Nasina, Madhusudhana Rao; Dugasani, Sreekantha Reddy; Inturu, Omkaram

    2018-03-01

    Iron substituted indium oxide (In1- x Fe x )2O3 thin films at x = 0.00, 0.03, 0.05 and 0.07 were coated onto Corning 7059 glass substrates using the electron beam evaporation technique followed by annealing at different temperatures. The prepared thin films were subjected to different characterization techniques to study their structural, optical and magnetic properties. The structural properties of the thin films were studied using x-ray diffractometry (XRD). From the XRD results it was found that the films were crystallized in cubic structure, and no change in crystal structure was observed with annealing temperature. No secondary phases related to iron were observed from the XRD profiles. The chemical composition and surface morphology of the films were examined by field emission scanning electron microscope (FE-SEM) attached with energy dispersive analysis of x-ray (EDAX). The valence state of the elements were studied by x-ray photoelectron spectroscopy (XPS) and found that the indium, iron and oxygen were in In+3, Fe+3 and O-2 states. From the data, the band gap of the (In1- x Fe x )2O3 thin films were calculated and it increased with increase of annealing temperature. The magnetic properties of the films were studied at room temperature by vibrating sample magnetometer (VSM). The films exhibited ferromagnetism at room temperature.

  12. Spatiotemporal Monte Carlo transport methods in x-ray semiconductor detectors: application to pulse-height spectroscopy in a-Se.

    Science.gov (United States)

    Fang, Yuan; Badal, Andreu; Allec, Nicholas; Karim, Karim S; Badano, Aldo

    2012-01-01

    The authors describe a detailed Monte Carlo (MC) method for the coupled transport of ionizing particles and charge carriers in amorphous selenium (a-Se) semiconductor x-ray detectors, and model the effect of statistical variations on the detected signal. A detailed transport code was developed for modeling the signal formation process in semiconductor x-ray detectors. The charge transport routines include three-dimensional spatial and temporal models of electron-hole pair transport taking into account recombination and trapping. Many electron-hole pairs are created simultaneously in bursts from energy deposition events. Carrier transport processes include drift due to external field and Coulombic interactions, and diffusion due to Brownian motion. Pulse-height spectra (PHS) have been simulated with different transport conditions for a range of monoenergetic incident x-ray energies and mammography radiation beam qualities. Two methods for calculating Swank factors from simulated PHS are shown, one using the entire PHS distribution, and the other using the photopeak. The latter ignores contributions from Compton scattering and K-fluorescence. Comparisons differ by approximately 2% between experimental measurements and simulations. The a-Se x-ray detector PHS responses simulated in this work include three-dimensional spatial and temporal transport of electron-hole pairs. These PHS were used to calculate the Swank factor and compare it with experimental measurements. The Swank factor was shown to be a function of x-ray energy and applied electric field. Trapping and recombination models are all shown to affect the Swank factor.

  13. Mean-field theory of magnetic properties of Mn.sub.x./sub.III.sub.1-x./sub.V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Abolfath, M.; Jungwirth, Tomáš; MacDonald, A. H.

    2001-01-01

    Roč. 10, - (2001), s. 161-164 ISSN 1386-9477 Institutional research plan: CEZ:AV0Z1010914 Keywords : diluted magnetic semiconductors * ferromagnetism * magnetic anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.009, year: 2001

  14. Hole-hole correlation effects on magnetic properties of Mn.sub.x./sub.III.sub.1-x./sub.V diluted magnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Byounghak, L.; MacDonald, A. H.

    2001-01-01

    Roč. 10, - (2001), s. 153-156 ISSN 1386-9477 Institutional research plan: CEZ:AV0Z1010914 Keywords : diluted magnetic semiconductors * ferromagnetism * electronic correlation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.009, year: 2001

  15. Doping dependent room-temperature ferromagnetism and structural properties of dilute magnetic semiconductor ZnO:Cu2+ nanorods

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

    2009-01-01

    Copper doped ZnO nanoparticles were synthesized by the chemical technique based on the hydrothermal method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) for different doping percentages of Cu 2+ (1-10%). TEM/SEM images showed formation of uniform nanorods, the aspect ratio of which varied with doping percentage of Cu 2+ . The wurtzite structure of ZnO gradually degrades with the increasing Cu 2+ doping concentration and an additional CuO associated diffraction peak was observed above 8% of Cu 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Cu 2+ doping concentrations was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong room-temperature ferromagnetic behavior, however at higher doping percentage of copper the ferromagnetic behavior was suppressed and paramagnetic nature was enhanced.

  16. Double resonance capacitance spectroscopy (DORCAS): A new experimental technique for assignment of X-ray absorption peaks to surface sites of semiconductor

    CERN Document Server

    Ishii, M

    2003-01-01

    As a new microspectroscopy for semiconductor surface analysis using an X-ray beam, double resonance capacitance spectroscopy (DORCAS) is proposed. For a microscopic X-ray absorption measurement, a local capacitance change owing to X-ray induced emission of localized electrons is detected by a microprobe. The applied bias voltage V sub b dependence of the capacitance also provides information on the surface density of state. The resonance of the Fermi energy with a surface level by V sub b control makes possible the selection of the observable surface site in the X-ray absorption measurements, i.e. site-specific spectroscopy. The double resonance of the surface site selection (V sub b resonance) and the resonant X-ray absorption of the selected site (photon energy h nu resonance) enhances the capacitance signal. The DORCAS measurement of the GaAs surface shows correlation peaks at h nu=10.402 keV and V sub b =-0.4 V and h nu=10.429 keV and V sub b =+0.1 V, indicating that these resonant X-ray absorption peaks ...

  17. Self-consistent method for quantifying indium content from X-ray spectra of thick compound semiconductor specimens in a transmission electron microscope.

    Science.gov (United States)

    Walther, T; Wang, X

    2016-05-01

    Based on Monte Carlo simulations of X-ray generation by fast electrons we calculate curves of effective sensitivity factors for analytical transmission electron microscopy based energy-dispersive X-ray spectroscopy including absorption and fluorescence effects, as a function of Ga K/L ratio for different indium and gallium containing compound semiconductors. For the case of InGaN alloy thin films we show that experimental spectra can thus be quantified without the need to measure specimen thickness or density, yielding self-consistent values for quantification with Ga K and Ga L lines. The effect of uncertainties in the detector efficiency are also shown to be reduced. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

  18. High pressure phase transition and anharmonic properties of Zn1-xMxSe (M=Cd, Fe and Mn) diluted magnetic semiconductor

    International Nuclear Information System (INIS)

    Talati, Mina; Shinde, Satyam; Jha, Prafulla K.

    2004-01-01

    The present work employs interionic potential approach based on charge transfer effect to calculate and describe the high pressure phase transition and elastic behaviour of the diluted magnetic semiconductors Zn 1-x M x Se (M=Cd, Fe and Mn). We have obtained a reasonably good agreement between present calculated values and experimentally observed data on the phase transition pressures. The volume collapses and high pressure behaviours are also in reasonably good agreement with the available data for all compounds under consideration. The variations of elastic constants and their combinations with pressure follow a systematic trend, identical to that observed in other compounds of zinc blende structure family. The present approach has also succeeded in predicting the Born and relative stability criteria

  19. Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Kowarik, S.; Weber, C. [Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin (Germany); Hinderhofer, A.; Gerlach, A.; Schreiber, F. [Universität Tübingen, Institut für Angewandte Physik, Auf der Morgenstelle 10, 72076 Tübingen (Germany); Wang, C.; Hexemer, A. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Leone, S. R. [Departments of Chemistry and Physics, University of California, and Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2015-11-15

    Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs) of the organic semiconductors pentacene (PEN) and perfluoro-pentacene (PFP). Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.

  20. Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

    Directory of Open Access Journals (Sweden)

    S. Kowarik

    2015-11-01

    Full Text Available Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs of the organic semiconductors pentacene (PEN and perfluoro-pentacene (PFP. Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.

  1. Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1−x Snx films on Si substrate

    International Nuclear Information System (INIS)

    Mahmodi, H; Hashim, M R

    2017-01-01

    In this study, Ge 1−x Sn x alloy films are co-sputtered on Si(100) substrates using RF magnetron sputtering at different substrate temperatures. Scanning electron micrographs, atomic force microscopy (AFM), Raman spectroscopy, and x-ray photoemission spectroscopy (XPS) are conducted to investigate the effect of substrate temperature on the structural and optical properties of grown GeSn alloy films. AFM results show that RMS surface roughness of the films increases from 1.02 to 2.30 nm when raising the substrate temperature. This increase could be due to Sn surface segregation that occurs when raising the substrate temperature. Raman spectra exhibits the lowest FWHM value and highest phonon intensity for a film sputtered at 140 °C. The spectra show that decreasing the deposition temperature to 140 °C improves the crystalline quality of the alloy films and increases nanocrystalline phase formation. The results of Raman spectra and XPS confirm Ge–Sn bond formation. The optoelectronic characteristics of fabricated metal-semiconductor-metal photodetectors on sputtered samples at room temperature (RT) and 140 °C are studied in the dark and under illumination. The sample sputtered at 140 °C performs better than the RT sputtered sample. (paper)

  2. Bulk Crystal Growth, and High-Resolution X-ray Diffraction Results of LiZnAs Semiconductor Material

    Science.gov (United States)

    Montag, Benjamin W.; Reichenberger, Michael A.; Sunder, Madhana; Ugorowski, Philip B.; Nelson, Kyle A.; Henson, Luke C.; McGregor, Douglas S.

    2017-08-01

    LiZnAs is being explored as a candidate for solid-state neutron detectors. The compact form, solid-state device would have greater efficiency than present day gas-filled 3He and 10BF3 detectors. Devices fabricated from LiZnAs having either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. The 6Li( n, t)4He reaction yields a total Q-value of 4.78 MeV, an energy larger than that of the 10B reaction, which can easily be identified above background radiations. LiZnAs material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace (Montag et al. in J Cryst Growth 412:103, 2015). The raw synthesized LiZnAs was purified by a static vacuum sublimation in quartz (Montag et al. in J Cryst Growth 438:99, 2016). Bulk crystalline LiZnAs ingots were grown from the purified material with a high-temperature Bridgman-style growth process described here. One of the largest LiZnAs ingots harvested was 9.6 mm in diameter and 4.2 mm in length. Samples were harvested from the ingot and were characterized for crystallinity using a Bruker AXS Inc. D8 AXS Inc. D2 CRYSO, energy dispersive x-ray diffractometer, and a Bruker AXS Inc. D8 DISCOVER, high-resolution x-ray diffractometer equipped with molybdenum radiation, Gobel mirror, four bounce germanium monochromator and a scintillation detector. The primary beam divergence was determined to be 0.004°, using a single crystal Si standard. The x-ray based characterization revealed that the samples nucleated in the (110) direction and a high-resolution open detector rocking curve recorded on the (220) LiZnAs yielded a full width at half maximum (FWHM) of 0.235°. Sectional pole figures using off-axis reflections of the (211) LiZnAs confirmed in-plane ordering, and also indicated the presence of multiple

  3. Ultrasensitive NO2 Sensor Based on Ohmic Metal-Semiconductor Interfaces of Electrolytically Exfoliated Graphene/Flame-Spray-Made SnO2 Nanoparticles Composite Operating at Low Temperatures.

    Science.gov (United States)

    Tammanoon, Nantikan; Wisitsoraat, Anurat; Sriprachuabwong, Chakrit; Phokharatkul, Ditsayut; Tuantranont, Adisorn; Phanichphant, Sukon; Liewhiran, Chaikarn

    2015-11-04

    In this work, flame-spray-made undoped SnO2 nanoparticles were loaded with 0.1-5 wt % electrolytically exfoliated graphene and systematically studied for NO2 sensing at low working temperatures. Characterizations by X-ray diffraction, transmission/scanning electron microscopy, and Raman and X-ray photoelectron spectroscopy indicated that high-quality multilayer graphene sheets with low oxygen content were widely distributed within spheriodal nanoparticles having polycrystalline tetragonal SnO2 phase. The 10-20 μm thick sensing films fabricated by spin coating on Au/Al2O3 substrates were tested toward NO2 at operating temperatures ranging from 25 to 350 °C in dry air. Gas-sensing results showed that the optimal graphene loading level of 0.5 wt % provided an ultrahigh response of 26,342 toward 5 ppm of NO2 with a short response time of 13 s and good recovery stabilization at a low optimal operating temperature of 150 °C. In addition, the optimal sensor also displayed high sensor response and relatively short response time of 171 and 7 min toward 5 ppm of NO2 at room temperature (25 °C). Furthermore, the sensors displayed very high NO2 selectivity against H2S, NH3, C2H5OH, H2, and H2O. Detailed mechanisms for the drastic NO2 response enhancement by graphene were proposed on the basis of the formation of graphene-undoped SnO2 ohmic metal-semiconductor junctions and accessible interfaces of graphene-SnO2 nanoparticles. Therefore, the electrolytically exfoliated graphene-loaded FSP-made SnO2 sensor is a highly promising candidate for fast, sensitive, and selective detection of NO2 at low operating temperatures.

  4. Positron annihilation spectroscopy in defects of semiconductors

    International Nuclear Information System (INIS)

    Fujinami, Masanori

    2002-01-01

    Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 18 cm -3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 15 cm -2 ) silicon and oxygen-implanted (180 keV, 2x10 15 cm -2 ) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V 6 O 2 at 600degC and V 10 O 6 at 800degC. (S.Y.)

  5. High-field Faraday rotation in II-VI-based semimagnetic semiconductors

    NARCIS (Netherlands)

    Savchuk, AI; Fediv, [No Value; Nikitin, PI; Perrone, A; Tatzenko, OM; Platonov, VV

    The effects of d-d exchange interaction have been studied by measuring high-field Faraday rotation in II-VI-based semimagnetic semiconductors. For Cd1-xMnxTe crystals with x = 0.43 and at room temperature a saturation in magnetic field dependence of the Faraday rotation has been observed. In the

  6. Temperature dependence of electromechanical properties of PLZT x ...

    Indian Academy of Sciences (India)

    ... broad peak at a temperature higher than mt. The voltage constant 31 decreases and the planar coupling coefficient p remains constant up to half of the mt and then falls sharply with . Half of the mt can, therefore, be used for specifying the working temperature limit of the piezoceramics for the device applications.

  7. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    International Nuclear Information System (INIS)

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with open-quotes single carrierclose quotes response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security

  8. Elliptically Bent X-ray Mirrors with Active Temperature Stabilization

    International Nuclear Information System (INIS)

    Yuan, Sheng; Church, Matthew; Yashchuk, Valeriy V.; Goldberg, Kenneth A.; Celestre, Rich; McKinney, Wayne R.; Kirschman, Jonathan; Morrison, Greg; Noll, Tino; Warwick, Tony; Padmore, Howard A.

    2010-01-01

    We present details of design of elliptically bent Kirkpatrick-Baez mirrors developed and successfully used at the Advanced Light Source for submicron focusing. A distinctive feature of the mirror design is an active temperature stabilization based on a Peltier element attached directly to the mirror body. The design and materials have been carefully optimized to provide high heat conductance between the mirror body and substrate. We describe the experimental procedures used when assembling and precisely shaping the mirrors, with special attention paid to laboratory testing of the mirror-temperature stabilization. For this purpose, the temperature dependence of the surface slope profile of a specially fabricated test mirror placed inside a temperature-controlled container was measured. We demonstrate that with active mirror-temperature stabilization, a change of the surrounding temperature by more than 3K does not noticeably affect the mirror figure. Without temperature stabilization, the surface slope changes by approximately 1.5 ?mu rad rms (primarily defocus) under the same conditions.

  9. Elliptically Bent X-Ray Mirrors with Active Temperature Stabilization

    International Nuclear Information System (INIS)

    Yuan, S.; Church, M.; Yashchuk, V.V.; Celestre, R.S.; McKinney, W.R.; Morrison, G.; Warwick, T.; Padmore, H.A.; Goldberg, K.A.; Kirschman, J.; Noll, T.

    2010-01-01

    We present details of design of elliptically bent Kirkpatrick-Baez mirrors developed and successfully used at the advanced light source for submicron focusing. A distinctive feature of the mirror design is an active temperature stabilization based on a Peltier element attached directly to the mirror body. The design and materials have been carefully optimized to provide high heat conductance between the mirror body and substrate. We describe the experimental procedures used when assembling and precisely shaping the mirrors, with special attention paid to laboratory testing of the mirror-temperature stabilization. For this purpose, the temperature dependence of the surface slope profile of a specially fabricated test mirror placed inside a temperature-controlled container was measured. We demonstrate that with active mirror-temperature stabilization, a change of the surrounding temperature by more than 3 K does not noticeably affect the mirror figure. Without temperature stabilization, the rms slope error is changed by approximately 1.5 μrad (primarily defocus) under the same conditions

  10. Temperature-dependent elastic properties of Ti{sub 1−x}Al{sub x}N alloys

    Energy Technology Data Exchange (ETDEWEB)

    Shulumba, Nina [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Functional Materials, Saarland University, D-66123 Saarbrücken (Germany); Hellman, Olle [Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125 (United States); Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Rogström, Lina; Raza, Zamaan; Tasnádi, Ferenc; Odén, Magnus [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Abrikosov, Igor A. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Materials Modeling and Development Laboratory, NUST “MISIS,” 119049 Moscow (Russian Federation); LACOMAS Laboratory, Tomsk State University, 634050 Tomsk (Russian Federation)

    2015-12-07

    Ti{sub 1−x}Al{sub x}N is a technologically important alloy that undergoes a process of high temperature age-hardening that is strongly influenced by its elastic properties. We have performed first principles calculations of the elastic constants and anisotropy using the symmetry imposed force constant temperature dependent effective potential method, which include lattice vibrations and therefore the effects of temperature, including thermal expansion and intrinsic anharmonicity. These are compared with in situ high temperature x-ray diffraction measurements of the lattice parameter. We show that anharmonic effects are crucial to the recovery of finite temperature elasticity. The effects of thermal expansion and intrinsic anharmonicity on the elastic constants are of the same order, and cannot be considered separately. Furthermore, the effect of thermal expansion on elastic constants is such that the volume change induced by zero point motion has a significant effect. For TiAlN, the elastic constants soften non-uniformly with temperature: C{sub 11} decreases substantially when the temperature increases for all compositions, resulting in an increased anisotropy. These findings suggest that an increased Al content and annealing at higher temperatures will result in a harder alloy.

  11. Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

    Directory of Open Access Journals (Sweden)

    Şadan Özden

    2016-01-01

    Full Text Available Deposition of poly(4-vinyl phenol insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol/p-GaAs metal-oxide-semiconductor (MOS structure. Temperature was set to 80–320 K while the current-voltage (I-V characteristics of the structure were examined in the study. Ideality factor (n and barrier height (ϕb values found in the experiment ranged from 3.13 and 0.616 eV (320 K to 11.56 and 0.147 eV (80 K. Comparing the thermionic field emission theory and thermionic emission theory, the temperature dependent ideality factor behavior displayed that thermionic field emission theory is more valid than the latter. The calculated tunneling energy was 96 meV.

  12. Extraordinary Hall effect in Co implanted GaAs hybrid magnetic semiconductors

    International Nuclear Information System (INIS)

    Honda, S.; Tateishi, K.; Nawate, M.; Sakamoto, I.

    2004-01-01

    Hybrid Co/GaAs ferromagnetic semiconductors have been prepared by implantation method. In these samples, sheet resistance shows weak temperature dependence, and the extraordinary Hall effect with positive coefficient is observed. In small Co content samples, Hall resistance increases with decreasing temperature and maximum value of 3.6x10 -2 Ω is obtained at 150 K

  13. Time-of-flight neutron diffraction investigation of temperature factors in the Zn blende semiconductor InP

    International Nuclear Information System (INIS)

    Ferrari, C.; Bocchi, C.; Fornari, R.; Moze, O.; Wilson, C.C.

    1992-01-01

    A structural investigation of the Zn blende structure semiconductor InP has been carried out using the single crystal diffractometer SXD at the pulsed neutron facility ISIS. The ability to measure structure factors accurately at large Q values even with highly absorbing materials such as InP is demonstrated. Measurements were performed on a single crystal of InP at 293, 100 and 50 K with the crystallographic axis mounted perpendicular to the scattering plane. This enabled collection of (hhl) reflections up to a maximum with Miller indices (10, 10, 8). (orig.)

  14. Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

    Energy Technology Data Exchange (ETDEWEB)

    Vais, Abhitosh, E-mail: Abhitosh.Vais@imec.be; Martens, Koen; DeMeyer, Kristin [Department of Electrical Engineering, KU Leuven, B-3000 Leuven (Belgium); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Lin, Han-Chung; Ivanov, Tsvetan; Collaert, Nadine; Thean, Aaron [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Dou, Chunmeng [Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Xie, Qi; Maes, Jan [ASM International, B-3001 Leuven (Belgium); Tang, Fu; Givens, Michael [ASM International, Phoenix, Arizona 85034-7200 (United States); Raskin, Jean-Pierre [Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Universiteé Catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium)

    2015-08-03

    This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices. The dispersion in the accumulation region of the capacitance data is found to change from 4%–9% (per decade frequency) to ∼0% when the temperature is reduced from 300 K to 4 K in a wide range of MOS capacitors with different gate dielectrics and III-V substrates. We show that such significant temperature dependence of C-V frequency dispersion cannot be due to the temperature dependence of channel electrostatics, i.e., carrier density and surface potential. We also show that the temperature dependence of frequency dispersion, and hence, the capture/emission process of border traps can be modeled by a combination of tunneling and a “temperature-activated” process described by a non-radiative multi-phonon model, instead of a widely believed single-step elastic tunneling process.

  15. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  16. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  17. Temperature dependence of the electrical resistivity of amorphous Co80-xErxB20 alloys

    International Nuclear Information System (INIS)

    Touraghe, O.; Khatami, M.; Menny, A.; Lassri, H.; Nouneh, K.

    2008-01-01

    The temperature dependence of the electrical resistivity of amorphous Co 80-x Er x B 20 alloys with x=0, 3.9, 7.5 and 8.6 prepared by melt spinning in pure argon atmosphere was studied. All amorphous alloys investigated here are found to exhibit a resistivity minimum at low temperature. The electrical resistivity exhibits logarithmic temperature dependence below the temperature of resistivity minimum T min . In addition, the resistivity shows quadratic temperature behavior in the interval T min < T<77 K. At high temperature, the electrical resistivity was discussed by the extended Ziman theory. For the whole series of alloys, the composition dependence of the temperature coefficient of electrical resistivity α shows a change in structural short range occurring in the composition range 8-9 at%

  18. Semiconductor-metal transitions in liquid In100-xSex alloys: A concentration-induced transition

    International Nuclear Information System (INIS)

    Ferlat, G.; San Miguel, A.; Xu, H.; Aouizerat, A.; Blase, X.; Zuniga, J.; Munoz-Sanjose, V.

    2004-01-01

    The electronic and structural properties of In 100-x Se x liquid alloys close to their melting points have been investigated by combining x-ray-absorption experiments with ab initio molecular-dynamics simulations. Extended x-ray-absorption fine-structure data have been acquired at both the In and Se K edges in a large concentration range (x=20% to x=50% of Se content). Ab initio molecular-dynamics simulations have been carried out at the two most extreme concentrations explored experimentally. Liquid InSe is found to retain a semiconducting behavior which results from a low-dimensional structure, reminiscent of that of the ambient solid phase, characterized by strong In-Se interactions within tetrahedral units. On the other side, the In 80 Se 20 liquid alloy shows a metalliclike behavior which is correlated to a more dense-packed structure

  19. The crystal structure of the diluted magnetic semiconductor zinc manganese arsenide (Zn1-xMnx)3As2)

    NARCIS (Netherlands)

    de Vries, G.C.; Frikkee, E.; Helmholdt, R.B.; Kopinga, K.; Jonge, de W.J.M.

    1989-01-01

    The crystal structure of (Zn1-xMnx)3As2 has been determined with neutron powder diffraction for x = 0, 0.08 and 0.135. The structure of these compounds turned out to be the same as that of the a-phase of Cd3As2, space group I41cd. The diffraction for a sample with nominal x = 0.2 indicates the

  20. X radiation diagnostics of high-temperature laser plasma

    International Nuclear Information System (INIS)

    Marsak, Z.; Bryknar, Z.; Legova, S.; Pina, L.

    1980-01-01

    Main aspects of X-ray emission from plasma heated by a pulsed laser and methods of its detection are presented, especially using a pinhole camera and a multichannel spectrometer with p-i-n diodes and Be-filters for measurement in the energy range 0.5 keV to 3 keV. (author)

  1. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  2. Effect of bath temperature on the properties of CuIn{sub x}Ga{sub 1-x} Se{sub 2} thin films grown by the electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Cao Jie; Qu Shengchun; Liu Kong; Wang Zhanguo, E-mail: qsc@semi.ac.c [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2010-08-15

    Electrodeposition is a promising and low cost method to synthesize CuIn{sub x} Ga{sub 1-x} Se{sub 2} (CIGS)thin films as an absorber layer for solar cells. The effect of bath temperature on the properties of CIGS thin films was investigated in this paper. CIGS films of 1 {mu}m thickness were electrodeposited potentiostatically from aqueous solution, containing trisodium citrate as a complexing agent, on Mo/glass substrate under a voltage of -0.75 V, and bath temperatures were varied from 20 to 60{sup 0}C. The effects of bath temperature on the properties of CIGS thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy. XRD revealed the presence of the CuIni{sub 0.7}Ga{sub 0.3} Se{sub 2} phase, the optimal phase for application in solar cells. The grain dimensions and crystallizability increase along with the increase of the bath temperature, and the films become stacked and homogeneous. There were few changes in surface morphology and the composition of the films. (semiconductor materials)

  3. Temperature-dependent thermal and thermoelectric properties of n -type and p -type S c1 -xM gxN

    Science.gov (United States)

    Saha, Bivas; Perez-Taborda, Jaime Andres; Bahk, Je-Hyeong; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Sands, Timothy D.

    2018-02-01

    Scandium Nitride (ScN) is an emerging rocksalt semiconductor with octahedral coordination and an indirect bandgap. ScN has attracted significant attention in recent years for its potential thermoelectric applications, as a component material in epitaxial metal/semiconductor superlattices, and as a substrate for defect-free GaN growth. Sputter-deposited ScN thin films are highly degenerate n -type semiconductors and exhibit a large thermoelectric power factor of ˜3.5 ×10-3W /m -K2 at 600-800 K. Since practical thermoelectric devices require both n- and p-type materials with high thermoelectric figures-of-merit, development and demonstration of highly efficient p-type ScN is extremely important. Recently, the authors have demonstrated p-type S c1 -xM gxN thin film alloys with low M gxNy mole-fractions within the ScN matrix. In this article, we demonstrate temperature dependent thermal and thermoelectric transport properties, including large thermoelectric power factors in both n- and p-type S c1 -xM gxN thin film alloys at high temperatures (up to 850 K). Employing a combination of temperature-dependent Seebeck coefficient, electrical conductivity, and thermal conductivity measurements, as well as detailed Boltzmann transport-based modeling analyses of the transport properties, we demonstrate that p-type S c1 -xM gxN thin film alloys exhibit a maximum thermoelectric power factor of ˜0.8 ×10-3W /m -K2 at 850 K. The thermoelectric properties are tunable by adjusting the M gxNy mole-fraction inside the ScN matrix, thereby shifting the Fermi energy in the alloy films from inside the conduction band in case of undoped n -type ScN to inside the valence band in highly hole-doped p -type S c1 -xM gxN thin film alloys. The thermal conductivities of both the n- and p-type films were found to be undesirably large for thermoelectric applications. Thus, future work should address strategies to reduce the thermal conductivity of S c1 -xM gxN thin-film alloys, without affecting

  4. {\\rm{ZnO}}_{1-{{x}}}{\\rm{Te}}_{{{x}}} and {\\rm{ZnO}}_{1-{{x}}}\\rm{S}_{{{x}}} semiconductor alloys as competent materials for opto-electronic and solar cell applications: a comparative analysis

    Science.gov (United States)

    Das, Utsa; Pal, Partha P.

    2017-08-01

    ZnO1-x Te x ternary alloys have great potential to work as a photovoltaic (PV) absorber in solar cells. ZnO1-x S x is also a ZnO based alloy that have uses in solar cells. In this paper we report the comparative study of various parameters of ZnO1-x Te x and ZnO1-x S x for selecting it to be a competent material for solar cell applications. The parameters are mainly being calculated using the well-known VCA (virtual crystal approximation) and VBAC (Valence Band Anti-Crossing) model. It was certainly being analysed that the incorporation of Te atoms produces a high band gap lower than S atoms in the host ZnO material. The spin-orbit splitting energy value of ZnO1-x Te x was found to be higher than that of ZnO1-x S x . Beside this, the strain effects are also higher in ZnO1-x Te x than ZnO1-x S x . The remarkable notifying result which the paper is reporting is that at a higher percentage of Te atoms in ZnO1-x Te x , the spin-orbit splitting energy value rises above the band gap value, which signifies a very less internal carrier recombination that decreases the leakage current and increases the efficiency of the solar cell. Moreover, it also covers a wide wavelength range compared to ZnO1-x S x .

  5. Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn; Shen, Shanshan; Xu, Jun; Wang, Jing, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn [Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2016-06-15

    Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

  6. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  7. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  8. Superconducting transition temperature in the Y(1-x)M(x)Ba2Cu3O(y) system

    Science.gov (United States)

    Suzuki, Takeyuki; Yamazaki, Tsutomu; Sekine, Ryuuta; Koukitsu, Akinori; Seki, Hisashi

    1989-04-01

    Experimental results are presented for the inclusion of compositional additives, M, to the sintered high-temperature superconductor Y(1-x)M(x)Ba2Cu3O(y); M can be the oxides of Mg, Ce, Gd, Yb, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, Sb, Bi, and Te, as well as Li, Na, K, Ca, Sr, and La carbonates. Temperature dependence of the electrical resistance was measured down to about 80 K. Attention is given to the influence of ionic radius and the valence of the M species.

  9. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    Energy Technology Data Exchange (ETDEWEB)

    Hoidn, Oliver R.; Seidler, Gerald T., E-mail: seidler@uw.edu [Physics Department, University of Washington, Seattle, Washington 98195 (United States)

    2015-08-15

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  10. High vacuum high temperature x-ray camera (1961)

    International Nuclear Information System (INIS)

    Baron, J.L.

    1961-01-01

    - This camera makes it possible to carry out X-ray studies on highly oxidisable materials, up to about 900 deg. C. Most of the existing models do not provide sufficient protection against the formation of surface oxide or carbide films on the sample. The present arrangement makes it possible to operate at very low pressures: 5 x 10 -8 to 10 -7 torr, thanks to an entirely metallic apparatus. The radiation heating system consists of an incandescent lamp, outside the evacuated portion, and a reflector which concentrates the energetic flux into the sample through a silica window. The heated parts have thus only a small thermal inertia. With the apparatus it has been possible to determine the phase parameters of uranium-α up to 650 deg. C with a precision of ± 0.0015 A. A similar study has been carried out on a uranium-chromium alloy in the β-phase up to 740 deg. C. (author) [fr

  11. Positron annihilation and Wheeler complexes in semiconductors

    International Nuclear Information System (INIS)

    Prokob'ev, E.P.

    1995-01-01

    The Wheeler complexes Ps-Ex (positronium-exciton) were studied. These complexes are formed during irradiation of semiconductors and ionic crystals with positrons at low temperatures under optical excitation by excitons. The binding energy of these and more complex entities preventing dissociation into Ps and Ex and/or Ex ± is at least 0.1 eV, and the lifetime for the two-photon self-annihilation is τ 2γ ∼ 5.02 x 10 -10 x c 3 s (x c is the phenomenological parameter of the effective-mass method). The estimation of lifetimes τ 2γ and τ 2γ t (the total lifetime of Ps-Ex complexes with account for positron annihilation on valence electrons) led to the conclusion that Ps-Ex complexes can be observed in a number of oxide semiconductors, in zinc sulfide, and in alkali halide crystals; however, it was difficult to observe such complexes in silicon, gallium arsenide, and other A 3 B 5 and A 2 B 6 semiconductors

  12. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  13. Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In1 -xFex )2O3

    Science.gov (United States)

    Green, R. J.; Regier, T. Z.; Leedahl, B.; McLeod, J. A.; Xu, X. H.; Chang, G. S.; Kurmaev, E. Z.; Moewes, A.

    2015-10-01

    Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based electronics, but in most cases continue to elude explanations of their magnetic behavior. Here, we combine quantitative x-ray spectroscopy and Anderson impurity model calculations to study ferromagnetic Fe-substituted In2 O3 films, and we identify a subset of Fe atoms adjacent to oxygen vacancies in the crystal lattice which are responsible for the observed room temperature ferromagnetism. Using resonant inelastic x-ray scattering, we map out the near gap electronic structure and provide further support for this conclusion. Serving as a concrete verification of recent theoretical results and indirect experimental evidence, these results solidify the role of impurity-vacancy coupling in oxide-based DMSs.

  14. Review - X-ray diffraction measurements in high magnetic fields and at high temperatures

    Directory of Open Access Journals (Sweden)

    Yoshifuru Mitsui, Keiichi Koyama and Kazuo Watanabe

    2009-01-01

    Full Text Available A system was developed measuring x-ray powder diffraction in high magnetic fields up to 5 T and at temperatures from 283 to 473 K. The stability of the temperature is within 1 K over 6 h. In order to examine the ability of the system, the high-field x-ray diffraction measurements were carried out for Si and a Ni-based ferromagnetic shape-memory alloy. The results show that the x-ray powder diffraction measurements in high magnetic fields and at high temperatures are useful for materials research.

  15. Composition dependence of glow peak temperature in KCl1-xBrx doped with divalent cations

    International Nuclear Information System (INIS)

    Perez-Salas, R; Aceves, R; RodrIguez-Mijangos, R; Riveros, H G; Duarte, C

    2004-01-01

    Thermoluminescence measurements of β-irradiated Eu 2+ - and Ca 2+ - doped KCl 1-x KBr x solid solutions excited at room temperature have been carried out to identify the effect of composition on the glow peaks. A typical glow peak has been distinguished for each composition. A linear dependence of its temperature on the composition x has been found. These results indicate that for divalent impurity-doped alkali halide solid solutions these glow peak temperatures are mostly dependent on the lattice constant of the host than on the size of the anion or impurity cation

  16. Device for high-temperature X-ray diffraction analysis. Ustrojstvo dlya vysokotemperaturnogo rentgenostrukturnogo analiza

    Energy Technology Data Exchange (ETDEWEB)

    Epifanov, V G; Zavilinskij, A V; Pet' kov, V V; Polenur, A V

    1975-01-07

    Device for high-temperature X-ray diffraction analysis, containing a vacuum chamber with a window for X-ray transit, in which sample- and standard-holders, heater, thermal shields and means for standard and sample temperature measurement are located, is proposed. In order to increase the working temperature level and the structural change detection accuracy the heater is located between the sample- and standard-holders. The standard-holder is linked with the mechanism of control of its position in relation to the heater. The device is intended for investigating phase transformations by differential thermal analysis method with the simultaneous diffraction pattern detection using X-ray diffractometry method.

  17. Preparations and Characterizations of Luminescent Two Dimensional Organic-inorganic Perovskite Semiconductors

    Directory of Open Access Journals (Sweden)

    Sanjun Zhang

    2010-05-01

    Full Text Available This article reviews the synthesis, structural and optical characterizations of some novel luminescent two dimensional organic-inorganic perovskite (2DOIP semiconductors. These 2DOIP semiconductors show a self-assembled nano-layered structure, having the electronic structure of multi-quantum wells. 2DOIP thin layers and nanoparticles have been prepared through different methods. The structures of the 2DOIP semiconductors are characterized by atomic force microscopy and X-ray diffraction. The optical properties of theb DOIP semiconductors are characterized from absorption and photoluminescence spectra measured at room and low temperatures. Influences of different components, in particular the organic parts, on the structural and optical properties of the 2DOIP semiconductors are discussed.

  18. Evaluation of the occupational X-rays dose of the medical staff in a cardiac catheterization laboratory using an acrylic phantom and semiconductor dosimeter.

    Science.gov (United States)

    Pan, Lung Fa; Kittipayak, Samrit; Yen, Shan Lin; Pan, Lung Kwang; Lin, Cheng Hsun

    2016-01-01

    The occupational X-rays doses of medical staff in a cardiac catheterization laboratory were evaluated. Four customized acrylic phantoms were used to simulate a patient, medical doctor, assistant, and radiologist to evaluate the in-situ X-rays exposure dose using semiconductor dosimeters. The exposure dose was measured under three scenarios that were preset to imply: no shielding, moderate shielding and complete shielding for the medical staff in the laboratory. The doses were applied by changing the dose area product (DAP) from 11,000 to 500,000mGy·cm(2) in 14 increments. The estimated annual occupational doses for doctors, assistants and radiologists in scenarios I, II, and III were: I) 35.03, 7.78, 1.95; II) 1.95, 0.78, 0.06; and III) 0.19, 0.10, 0.05cSv, respectively. The derived linear regression line of the exposure dose with respect to the DAP were extrapolated to obtain the minimum detectable level (MDL) of DAP for triggering the staff dosimeters. Accordingly, the minimum annual dose was estimated as 0.05cSv. Additional shielding provided measurable protection to the staff. The protective clothing used in scenarios II and III can reduce the original dose from scenario I to ∼3% (scenario II) and ∼0.5% (scenario III). The annual occupational dose also changed with the various X-rays energy settings. The annual dose increased to 126% when the preset X-rays energy was changed from 70 to 100kVp. The semiconductor dosimeter proved to be an adequate tool for measuring low doses and low dose rates under these circumstances. The dose can be reduce of I) 35.03, 7.78, 1.95; to II) 1.95, 0.78, 0.06 (∼3%); or III) 0.19, 0.10, 0.05 (∼0.5%)cSv, respectively according to different protective scenarios.

  19. Metal-semiconductor, composite radiation detectors

    International Nuclear Information System (INIS)

    Orvis, W.J.; Yee, J.H.; Fuess, D.

    1992-12-01

    In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with the good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high-efficiency, room temperature gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, the authors have procured and tested a commercial device with operating characteristics similar to those of a single layer of the composite device. They have modeled the radiation transport in a multi-layered device, to verify the initial calculations of layer thickness and composition. They have modeled the electrostatic field in different device designs to locate and remove high-field regions that can cause device breakdown. They have fabricated 14 single layer prototypes

  20. Optical and magnetic properties of Sn{sub 1−x}Mn{sub x}O{sub 2} dilute magnetic semiconductor nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Tokeer, E-mail: tahmad3@jmi.ac.in [Nanochemistry Laboratory, Department of Chemistry, Jamia Millia Islamia, New Delhi 110025 (India); Khatoon, Sarvari [Nanochemistry Laboratory, Department of Chemistry, Jamia Millia Islamia, New Delhi 110025 (India); Coolahan, Kelsey [Department of Physics and Astronomy, Rowan University, 201 Mullica Hill Road, Glassboro, NJ 08028 (United States)

    2014-12-05

    Highlights: • Monophasic Mn-doped SnO{sub 2} nanoparticles by solvothermal method for first time. • High surface area with smaller particle size. • Increase in band gap with increasing Mn concentration. • Sn{sub 1−x}Mn{sub x}O{sub 2} (x = 0.05 and 0.10) revealed the parasitic ferromagnetism. • Sn{sub 0.85}Mn{sub 0.15}O{sub 2} showed paramagnetic behaviour. - Abstract: Sn{sub 1−x}Mn{sub x}O{sub 2} (x = 0.05, 0.10 and 0.15) nanoparticles with tetragonal structure have been successfully synthesized by solvothermal method using oxalate precursor route. The oxalate precursors and its corresponding oxides were characterized by powder X-ray diffraction (PXRD), thermogravimetric (TG), fourier transform infrared (FTIR) and transmission electron microscopic (TEM) studies. PXRD studies showed the highly crystalline and monophasic nature of the solid solutions. The shifting of X-ray reflections towards higher angle is attributed to the incorporation of Mn{sup 2+} ions in SnO{sub 2} host lattice. The average particle size was found to be in the range of 5–11 nm. Reflectance measurements showed blue shift in energy band gap which increases with increasing Mn{sup 2+} concentration. Surface area of these nanoparticles (59–388 m{sup 2}/g) was found to be high which increases with increasing the dopant ion concentration. Mn-doped SnO{sub 2} showed distinct magnetic behaviour with different manganese concentration. Sn{sub 1−x}Mn{sub x}O{sub 2} (x = 0.05 and 0.10) revealed the parasitic ferromagnetism, however on increasing x = 0.15, sample showed paramagnetic behaviour.

  1. Temperature Profile of IR Blocking Windows Used in Cryogenic X-Ray Spectrometers

    International Nuclear Information System (INIS)

    Friedrich, S.; Funk, T.; Drury, O.; Labov, S.E.

    2000-01-01

    Cryogenic high-resolution X-ray spectrometers are typically operated with thin IR blocking windows to reduce radiative heating of the detector while allowing good x-ray transmission. We have estimated the temperature profile of these IR blocking windows under typical operating conditions. We show that the temperature in the center of the window is raised due to radiation from the higher temperature stages. This can increase the infrared photon flux onto the detector, thereby increasing the IR noise and decreasing the cryostat hold time. The increased window temperature constrains the maximum window size and the number of windows required. We discuss the consequences for IR blocking window design

  2. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  3. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  4. Photoluminescent enhancement of CdSe/Cd(1-x) Zn(x)S quantum dots by hexadecylamine at room temperature.

    Science.gov (United States)

    Yang, Jie; Yang, Ping

    2012-09-01

    CdSe/Cd(1-x) Zn(x)S core/shell quantum dots (QDs) were fabricated in 1-octadecene via a two step synthesis. CdSe cores were first prepared using CdO, trioctylphosphine (TOP) selenium, and stearic acid. Subsquently, a Cd(1-x) Zn(x)S shell coating was carried out using zinc acetate dihydrate, cadmium acetate dihydrate, TOPS, and hexadecylamine (HDA) starting materials in the friendly organic system under relatively low temperature. The absorption and photoluminescence (PL) spectra have a significant red shift after the coverage of Cd(1-x)Zn(x)S shell on CdSe cores. The X-ray diffraction analysis of samples confirmed the formation of core/shell structure. The PL quantum yields (QYs) of CdSe/Cd(1-x)Zn(x)S QDs were improved gradually with time at room temperature. This is ascribed to the surface passivation of HDA to the QDs during store. This phenomenon was confirmed by the Fourier transform infrared spectrum of samples. Namely, HDA does not capped on the surface of as-prepared QDs, in which a low PL QYs was observed (less than 10%). Being storing for certain time, HDA attached to the surface of the QDs, in which the PL QYs increased (up to 31%) and the full width at half maximum of PL spectra decreased. Moreover, the fluorescence decay curve of the core/shell QDs is closer to a biexponential decay profile and has a longer average PL lifetime. The variation of average PL lifetime also indicated the influence of HDA during store.

  5. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  6. Study on Characteristic of CdZnTe Semiconductor Detectors for Alpha Particle Measurement

    International Nuclear Information System (INIS)

    Kang, Sang Mook; Ha, Jang Ho; Kim, Yong Kyun; Park, Se Hwan; Kim, Han Soo; Chung, Chong Eun

    2005-01-01

    The last 2-3 years have seen continued effort in the development of a wide band gap room-temperature compound semiconductor devices aimed principally at photon imaging covering hard X-rays, synchrotrons, and low to medium energy gamma rays. Especially, among the semiconductor materials of a wide band gap, CdZnTe(CZT) has commonly used X-ray and gammaray detection applications because of the opportunity to achieve and excellent spectral and spatial resolution. It has recently been demonstrated that CZT can be used as an ancillary detector with the ability to detect both alpha particles and X-ray at room temperature. CZT detectors are relatively inexpensive compared with some silicon detectors, and are priced about the same as amorphous silicon and photodiodes which are routinely used for charged particle detection. In this paper, we investigated the use of the CZT semiconductor material as an alpha particles detector

  7. Energy resolution and throughput of a new real time digital pulse processing system for x-ray and gamma ray semiconductor detectors

    International Nuclear Information System (INIS)

    Abbene, L; Gerardi, G; Raso, G; Brai, M; Principato, F; Basile, S

    2013-01-01

    New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring higher flexibility, stability, lower dead time, higher throughput and better spectroscopic performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors, coupled to resistive-feedback preamplifiers, highlight the excellent performance of the system both at low and high rate environments (up to 800 kcps). A comparison with a conventional analog electronics showed the better high-rate capabilities of the digital approach, in terms of energy resolution and throughput. These results make the proposed DPP system a very attractive tool for both laboratory research and for the development of advanced detection systems for high-rate-resolution spectroscopic imaging, recently proposed in diagnostic medicine, industrial imaging and security screening

  8. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  9. Low Temperature Synthesis, Chemical and Electrochemical Characterization of LiNi(x)Co(1-x)O2 (0 less than x less than 1)

    Science.gov (United States)

    Nanjundaswamy, K. S.; Standlee, D.; Kelly, C. O.; Whiteley, R. V., Jr.

    1997-01-01

    A new method of synthesis for the solid solution cathode materials LiNi(x)Co(1-x)O2 (0 less than x less than 1) involving enhanced reactions at temperatures less than or equal to 700 deg. C, between metal oxy-hydroxide precursors MOOH (M = Ni, Co) and Li-salts (Li2CO3, LiOH, and LiNO3) has been investigated. The effects of synthesis conditions and sources of Li, on phase purity, microstructure, and theoretical electrochemical capacity (total M(3+) content) are characterized by powder X-ray diffraction analysis, scanning electron microscopy, chemical analysis and room temperature magnetic susceptibility. An attempt has been made to correlate the electrochemical properties with the synthesis conditions and microstructure.

  10. Connecting the dots : shedding light on the self-assembly of semiconductor nanocrystals with synchrotron X-ray scattering techniques

    NARCIS (Netherlands)

    Geuchies, J.J.

    2017-01-01

    We studied the formation of two-dimensional crystals from nanocrystals using X-ray scattering techniques. Inside these nanocrystals, with sizes between 5-10 nm, the atoms are ordered in an atomic lattice. We use the nanocrystals as building blocks to create larger lattices in two dimensions. By

  11. Band gap calculations of the semiconductor BNxP1−x using modified Becke–Johnson approximation

    International Nuclear Information System (INIS)

    Benkraouda, M.; Amrane, N.

    2013-01-01

    Highlights: ► The Modified Becke–Johnson scheme gives a very accurate band gap. ► We have shown the invalidity of Vegard’s linear rule for BN x P 1−x . ► The band gap changes with alloy concentration are important in band gap engineering. - Abstract: In this work, the electronic properties of BN, BP and BN x P 1−x compounds have been investigated by means of first-principles density-functional total-energy calculation using the all-electron full potential linear augmented plane-wave method (FP-LAPW). The (FP-LAPW) method was used within the density functional theory (DFT) along with the Engel–Vosko and Becke–Johnson exchange correlation potential. The energy bands along high symmetry directions, the density of states and bowing distributions are calculated. The results have been discussed in terms of previously existing experimental and theoretical data, and comparisons with similar compounds have been made. Analysis of band structure suggests direct and pseudo-direct band gaps for both compounds.

  12. Heating of carriers as controlled by the combined interactions with acoustic and piezoelectric phonons in degenerate III-V semiconductors at low lattice temperature

    Science.gov (United States)

    Bhattacharya, D. P.; Das, J.; Basu, A.; Das, B.

    2017-09-01

    In compound semiconductors which lack inversion symmetry, the combined interaction of the electrons with both acoustic and piezoelectric phonons is dominant at low lattice temperatures ( 20 K). The field dependence of the effective electron temperature under these conditions, has been calculated by solving the modified energy balance equation that takes due account of the degeneracy. The traditionally used heated Fermi-Dirac (F.D.) function for the non-equilibrium distribution function is approximated by some well tested model distribution. This makes it possible to carry out the integrations quite easily and, thus to obtain some more realistic results in a closed form, without taking recourse to any oversimplified approximations. The numerical results that follow for InSb, InAs and GaN, from the present analysis, are then compared with the available theoretical and experimental data. The degeneracy and the piezoelectric interaction, both are seen to bring about significant changes in the electron temperature characteristics. The scope for further refinement is discussed.

  13. Effect of temperature upon the fatigue-crack propagation behavior of Inconel X-750

    International Nuclear Information System (INIS)

    James, L.A.

    1976-05-01

    The techniques of linear-elastic fracture mechanics were employed to characterize the effect of temperature upon the fatigue-crack propagation behavior of precipitation heat-treated Inconel X-750 in an air environment over the range 75-1200 0 F. In general, fatigue-crack growth rates increased with increasing test temperature

  14. Room temperature ferromagnetism in Zn{sub 1-x}Co{sub x}S thin films with wurtzite structure

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Shiv P., E-mail: shivpoojanbhola@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India); Pivin, J.C. [CSNSM, IN2P3-CNRS, Batiment 108, F-91405 Orsay Campus (France); Chawla, A.K.; Chandra, Ramesh [Nanoscience Laboratory, IIC, Indian Institute of Technology, Roorkee 247667 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, Lokendra, E-mail: lkumarau@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India)

    2011-11-15

    The magnetic properties of Zn{sub 1-x}Co{sub x}S (x=0.025 and 0.05) thin films grown on {alpha}-quartz substrates at different temperatures (T{sub S}) of 200, 400 and 600 deg. C by means of pulsed laser deposition are presented. The films are crystallized with wurtzite structure. Optical absorption and transmission electron microscopy measurements indicate that Co ions are substituted to Zn on tetrahedral sites. Their magnetic response is composed of ferromagnetic and paramagnetic components of which respective strengths depend on T{sub S} and Co concentration. This behavior is interpreted as due to fluctuations in the magnetic ordering, depending on grain size and site location in grain boundaries or in crystal cores. - Highlights: > Co doped ZnS thin films have been fabricated at different substrate temperatures. > Magnetization in the films changes with changing substrate temperature. > Substitution of Co on Zn sites gives room temperature intrinsic ferromagnetism. > Magnetization in the films is composed of ferromagnetic and paramagnetic components.

  15. High-pressure powder x-ray diffraction experiments on Zn at low temperature

    CERN Document Server

    Takemura, K; Fujihisa, H; Kikegawa, T

    2002-01-01

    High-pressure powder x-ray diffraction experiments have been performed on Zn with a He-pressure medium at low temperature. When the sample was compressed in the He medium at low temperature, large nonhydrostaticity developed, yielding erroneous lattice parameters. On the other hand, when the pressure was changed at high temperatures, good hydrostaticity was maintained. No anomaly in the volume dependence of the c/a axial ratio has been found.

  16. Coronal temperature diagnostics from high-resolution soft X-ray spectra

    Science.gov (United States)

    Strong, K. T.; Claflin, E. S.; Lemen, J. R.; Linford, G. A.

    1988-01-01

    The problem of deriving the temperature of the coronal plasma from soft X-ray spectra is discussed. Spectral atlas scans of the soft X-ray spectrum from the Flat Crystal Spectrometer on the Solar Maximum Mission are compared with theoretical predictions of the relative intensities of some of the brighter lines to determine which line intensity ratios give the most reliable temperature diagnostics. The techniques considered include line widths, He-like G ratios, intensity ratios, and ratios of lines formed by different elements. It is found that the best temperature diagnostics come from the ratios of lines formed by successive ionization stages of the same element.

  17. Energy gaps, effective masses and ionicity of AlxGa1-xSb ternary semiconductor alloys

    Science.gov (United States)

    Bouarissa, N.; Boucenna, M.; Saib, S.; Siddiqui, S. A.

    2017-12-01

    A pseudopotential calculation of the electronic structure of AlxGa1-xSb ternary alloys in the zinc-blende structure has been performed. The compositional dependence of energy gaps, electron and heavy hole effective masses and ionicity of the material system of interest have been examined and discussed. Special attention has been given to the effect of the alloy disorder on the direct (Γ-Γ) bandgap energy. It is found that all features of interest vary monotonically with increasing the Al concentration x. Besides, bandgap bowing parameters and extent of the direct-to-indirect bandgap transition have been determined. Our findings agree generally well with the data reported in the literature. Trends in ionicity are found to be consistent with the Phillips ionicity scale.

  18. Cu2I2Se6: A Metal-Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature.

    Science.gov (United States)

    Lin, Wenwen; Stoumpos, Constantinos C; Kontsevoi, Oleg Y; Liu, Zhifu; He, Yihui; Das, Sanjib; Xu, Yadong; McCall, Kyle M; Wessels, Bruce W; Kanatzidis, Mercouri G

    2018-02-07

    Cu 2 I 2 Se 6 is a new wide-bandgap semiconductor with high stability and great potential toward hard radiation and photon detection. Cu 2 I 2 Se 6 crystallizes in the rhombohedral R3̅m space group with a density of d = 5.287 g·cm -3 and a wide bandgap E g of 1.95 eV. First-principles electronic band structure calculations at the density functional theory level indicate an indirect bandgap and a low electron effective mass m e * of 0.32. The congruently melting compound was grown in centimeter-size Cu 2 I 2 Se 6 single crystals using a vertical Bridgman method. A high electric resistivity of ∼10 12 Ω·cm is readily achieved, and detectors made of Cu 2 I 2 Se 6 single crystals demonstrate high photosensitivity to Ag Kα X-rays (22.4 keV) and show spectroscopic performance with energy resolutions under 241 Am α-particles (5.5 MeV) radiation. The electron mobility is measured by a time-of-flight technique to be ∼46 cm 2 ·V -1 ·s -1 . This value is comparable to that of one of the leading γ-ray detector materials, TlBr, and is a factor of 30 higher than mobility values obtained for amorphous Se for X-ray detection.

  19. Room temperature magneto-electric coupling in La-Zn doped Ba{sub 1-x}La{sub x}Fe{sub 12-x}Zn{sub x}O{sub 19} (x = 0.0-0.4) hexaferrite

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Pawan; Gaur, Anurag [National Institute of Technology, Department of Physics, Kurukshetra (India)

    2017-12-15

    Barium hexaferrite powder samples with substitution of La{sup +3} at Ba{sup +2} and Zn{sup +2} at Fe{sup +3} site, according to the series formula Ba{sub 1-x}La{sub x}Fe{sub 12-x}Zn{sub x}O{sub 19} (x = 0.0, 0.1, 0.2, 0.3, 0.4) have been prepared by the co-precipitation method. These samples were characterized by X-ray diffractometer (XRD), scanning electron microscopy, Polarization versus electric field loop tracer and vibrating sample magnetometer techniques. XRD patterns and Rietveld refinement indicate the single-phase formation of the magneto-plumbite barium hexaferrite for all the samples. Significant changes in dielectric properties are obtained by the different doping concentration of La and Zn. Ferroelectric loop for all the samples shows the lossy ferroelectric behaviour. Large spontaneous polarization is observed for x = 0.2 sample at room temperature. With increasing La and Zn doping content, the value of saturation magnetization and retentivity increases, and reaches a maximum value of 40.0 emu/gm and 24.0 emu/gm, respectively, for x = 0.2 sample and then decreases. To confirm the magneto-electric coupling, the second-order magneto-electric coupling coefficient β is measured through the dynamic method with the maximum value of ∝ 1.69 x 10{sup -6} mV/cm.Oe{sup 2} for x = 0.2 sample at room temperature. The observations of room temperature magneto-electric coupling in these samples are useful for evolution of new multifunctional devices. (orig.)

  20. Semiconductor composition containing iron, dysprosium, and terbium

    Science.gov (United States)

    Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.; Malasi, Abhinav; Taz, Humaira; Farah, Annettee E.; Kalyanaraman, Ramakrishnan; Duscher, Gerd Josef Mansfred; Patel, Maulik K.

    2017-09-26

    An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

  1. Faraday effect in semimagnetic semiconductors

    International Nuclear Information System (INIS)

    Nikitin, P.I.; Savchuk, A.I.

    1990-01-01

    Experimental and theoretical studies of the Faraday effect in a new class of materials -semimagnetic semiconductors (SS) have been received. Mechanisms of the giant Faraday effect in SS based on s, p-d exchange interaction of excitons, electrons and holes with magnetic ions have been discussed. Faraday rotation as a function of a radiation wavelength, magnetic component concentration, temperature, magnetic field intensity for crystals A 2 B 6 (Mn)A 2 x -1Mn xB 6 : and other SS (GaAs(Mn), CdP 2 (Mn),Pb 1-X2 )Mn x J 2 have been considered. We have attended to use FR for the study of a paramagnetic-spin glass transmission for determining the role of the relaxation effects with a participation of magnetic Mn 2+ ions, exitons, polarons in the direct and inverse Faraday effects. In addition the features of FR in thin films of SS and in spin superlattices have been discussed. Finally, we have analysed possibilities of applying the SS Faraday effect for developing magnetooptic devices (optical isolators and fibre optic sensors of magnetic fields)

  2. Photoconductivity response time in amorphous semiconductors

    Science.gov (United States)

    Adriaenssens, G. J.; Baranovskii, S. D.; Fuhs, W.; Jansen, J.; Öktü, Ö.

    1995-04-01

    The photoconductivity response time of amorphous semiconductors is examined theoretically on the basis of standard definitions for free- and trapped-carrier lifetimes, and experimentally for a series of a-Si1-xCx:H alloys with xgeneration rate and temperature. As no satisfactory agreement between models and experiments emerges, a simple theory is developed that can account for the experimental observations on the basis of the usual multiple-trappping ideas, provided a small probability of direct free-carrier recombination is included. The theory leads to a stretched-exponential photocurrent decay.

  3. The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

    International Nuclear Information System (INIS)

    Aydin, M. E.

    2008-01-01

    n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

  4. High-temperature cuprate superconductors studied by x-ray Compton scattering and positron annihilation spectroscopies

    International Nuclear Information System (INIS)

    Barbiellini, Bernardo

    2013-01-01

    The bulk Fermi surface in an overdoped (x = 0.3) single crystal of La 2−x Sr x CuO 4 has been observed by using x-ray Compton scattering. This momentum density technique also provides a powerful tool for directly seeing what the dopant Sr atoms are doing to the electronic structure of La 2 CuO 4 . Because of wave function effects, positron annihilation spectroscopy does not yield a strong signature of the Fermi surface in extended momentum space, but it can be used to explore the role of oxygen defects in the reservoir layers for promoting high temperature superconductivity.

  5. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  6. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  7. Valence band structure of InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy semiconductors calculated using valence band anticrossing model.

    Science.gov (United States)

    Samajdar, D P; Dhar, S

    2014-01-01

    The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  8. Ferromagnetic semiconductor-metal transition in europium monoxide

    International Nuclear Information System (INIS)

    Arnold, M.

    2007-10-01

    We present a microscopical model to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The physical properties of the model are systematically studied, whereas the main remark is on the interplay between magnetic order and the transport properties. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, obtained for EuO 1-x or Gd-doped Gd x Eu 1-x 0. In particular the doping dependence of the Curie temperature is reproduced The existence of correlation-induced local moments on the impurity sites is essential for this description. (orig.)

  9. Temperature dependence of the Schottky-barrier heights of n-type semiconductors in the temperature range of 7 to 300 K

    International Nuclear Information System (INIS)

    Chen, T.P.; Lee, T.C.; Fung, S.; Beling, C.D.

    1994-01-01

    In this note we present the results of the temperature dependence of the SBH in Au/n-Si, Ag/n-GaAs, and Au/n-GaAs in the temperature range of 7 to 300 K from our internal photoemission measurements. (orig.)

  10. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  11. Temperature dependence of diffuse satellites in Ti–(50 − x)Pd–xFe (14 ⩽ x ⩽ 20 (at.%)) alloys

    International Nuclear Information System (INIS)

    Todai, Mitsuharu; Fukuda, Takashi; Kakeshita, Tomoyuki

    2014-01-01

    Highlights: • Diffuse satellites of Ti–(50 − x)Pd–xFe alloys have been investigated. • Diffuse satellites appear at g B2 + 〈ζζ ¯ 0〉 * below T min . • The peak position of diffuse satellites at T min agree with the length of the nesting vector. • The present result implies that the nesting effect of Fermi surface originates diffuse satellites in Ti–(50 − x)Pd–xFe alloys. - Abstract: Diffuse satellites appearing in electron diffraction pattern of shape memory Ti–(50 − x)Pd–xFe (14, 16, 18, 19 and 20, in at.%) alloys have been investigated. The satellites appear in each alloy below T min , where its electrical resistivity shows a local minimum. The positions of satellites are g B2 + 〈ζ ζ ¯ 0〉 * , where g B2 is a reciprocal lattice vector of the B2-phase. The value of ζ is smaller than 1/5 at T min for all the alloys; it increases with decreasing temperature and decreases with increasing iron content. The value of ζ at T min agrees with the length of the nesting vector previously calculated by the present authors. This result implies that Fermi surface nesting is the origin of diffuse satellites in Ti–(50 − x)Pd–xFe alloys

  12. Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches

    Directory of Open Access Journals (Sweden)

    M. P. Polak

    2016-01-01

    Full Text Available Structural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the first principles in both zinc-blende and wurtzite structures. Performances of the finite difference (FD method and the density functional perturbation theory (DFPT are tested and compared. Both of these methods are applied to two different approaches of alloy simulation, a supercell of 16 and 32 atoms (for zinc-blende and wurtzite structures, resp. and the alchemical mixing (AM method, where the pseudopotentials are mixed in an appropriate way to form an alloy. All elastic properties, including the elastic tensors, elastic moduli, Poisson’s ratio, B/G, and relaxation coefficient, as well as lattice parameters are calculated using all said methods. Conclusions about the use of the approaches investigated in this paper and about their performance are drawn. In addition, in both crystal structures, the band gap is studied in the whole composition range using the MBJLDA functional. The band gap bowings are unusually high, which confirms earlier reports.

  13. An angle-resolved, wavelength-dispersive x-ray fluorescence spectrometer for depth profile analysis of ion-implanted semiconductors using synchrotron radiation

    Science.gov (United States)

    Schmitt, W.; Hormes, J.; Kuetgens, U.; Gries, W. H.

    1992-01-01

    An apparatus for angle-resolved, wavelength-dispersive x-ray fluorescence spectroscopy with synchrotron radiation has been built and tested at the beam line BN2 of the Bonn electron stretcher and accelerator (ELSA). The apparatus is to be used for nondestructive depth profile analysis of ion-implanted semiconductors as part of the multinational Versailles Project of Advanced Materials and Standards (VAMAS) project on ion-implanted reference materials. In particular, the centroid depths of depth profiles of various implants is to be determined by use of the angle-resolved signal ratio technique. First results of measurements on implants of phosphorus (100 keV, 1016 cm-2) and sulfur (200 keV, 1014 cm-2) in silicon wafers using ``white'' synchrotron radiation are presented and suggest that it should be generally possible to measure the centroid depth of an implant at dose densities as low as 1014 cm-2. Some of the apparative and technical requirements are discussed which are peculiar to the use of synchrotron radiation in general and to the use of nonmonochromatized radiation in particular.

  14. An angle-resolved, wavelength-dispersive x-ray fluorescence spectrometer for depth profile analysis of ion-implanted semiconductors using synchrotron radiation

    International Nuclear Information System (INIS)

    Schmitt, W.; Hormes, J.; Kuetgens, U.; Gries, W.H.

    1992-01-01

    An apparatus for angle-resolved, wavelength-dispersive x-ray fluorescence spectroscopy with synchrotron radiation has been built and tested at the beam line BN2 of the Bonn electron stretcher and accelerator (ELSA). The apparatus is to be used for nondestructive depth profile analysis of ion-implanted semiconductors as part of the multinational Versailles Project of Advanced Materials and Standards (VAMAS) project on ion-implanted reference materials. In particular, the centroid depths of depth profiles of various implants is to be determined by use of the angle-resolved signal ratio technique. First results of measurements on implants of phosphorus (100 keV, 10 16 cm -2 ) and sulfur (200 keV, 10 14 cm -2 ) in silicon wafers using ''white'' synchrotron radiation are presented and suggest that it should be generally possible to measure the centroid depth of an implant at dose densities as low as 10 14 cm -2 . Some of the apparative and technical requirements are discussed which are peculiar to the use of synchrotron radiation in general and to the use of nonmonochromatized radiation in particular

  15. Ab initio Assessment of Bi1-xRExCuOS (RE=La, Gd, Y, Lu) Solid Solution as Semiconductor for Photochemical Water Splitting

    KAUST Repository

    Lardhi, Sheikha F.

    2017-04-12

    The investigation of BiCuOCh (Ch = S, Se and Te) semiconductors family for thermoelectric or photovoltaic materials is an increasing topic of research. These materials can also be considered for photochemical water splitting if one representative having a bandgap, Eg, around 2 eV can be developed. With this aim, we simulated the solid solution Bi1-xRExCuOS (RE = Y, La, Gd and Lu) from pure BiCuOS (Eg~1.1 eV) to pure RECuOS compositions (Eg~2.9 eV) by DFT calculations based on the HSE06 range-separated hybrid functional with inclusion of spin-orbit coupling. Starting from the thermodynamic stability of the solid solution, a large variety of properties were computed for each system including bandgap, dielectric constants, effective masses and exciton binding energies. We discussed the variation of these properties based on the relative organization of Bi and RE atoms in their common sublattice to offer a physical understanding of the influence of the RE doping of BiCuOS. Some compositions were found to give appropriate properties for water splitting application. Furthermore, we found that at low RE fractions the transport properties of BiCuOS are improved that can find applications beyond water splitting.

  16. Ab initio Assessment of Bi1-xRExCuOS (RE=La, Gd, Y, Lu) Solid Solution as Semiconductor for Photochemical Water Splitting

    KAUST Repository

    Lardhi, Sheikha F.; Curutchet, Antton; Cavallo, Luigi; Harb, Moussab; Le Bahers, Tangui

    2017-01-01

    The investigation of BiCuOCh (Ch = S, Se and Te) semiconductors family for thermoelectric or photovoltaic materials is an increasing topic of research. These materials can also be considered for photochemical water splitting if one representative having a bandgap, Eg, around 2 eV can be developed. With this aim, we simulated the solid solution Bi1-xRExCuOS (RE = Y, La, Gd and Lu) from pure BiCuOS (Eg~1.1 eV) to pure RECuOS compositions (Eg~2.9 eV) by DFT calculations based on the HSE06 range-separated hybrid functional with inclusion of spin-orbit coupling. Starting from the thermodynamic stability of the solid solution, a large variety of properties were computed for each system including bandgap, dielectric constants, effective masses and exciton binding energies. We discussed the variation of these properties based on the relative organization of Bi and RE atoms in their common sublattice to offer a physical understanding of the influence of the RE doping of BiCuOS. Some compositions were found to give appropriate properties for water splitting application. Furthermore, we found that at low RE fractions the transport properties of BiCuOS are improved that can find applications beyond water splitting.

  17. [Effect of annealing temperature on the crystallization and spectroscopic response of a small-molecule semiconductor doped in polymer film].

    Science.gov (United States)

    Yin, Ming; Zhang, Xin-Ping; Liu, Hong-Mei

    2012-11-01

    The crystallization properties of the perylene (EPPTC) molecules doped in the solid film of the derivative of polyfluorene (F8BT) at different annealing temperatures, as well as the consequently induced spectroscopic response of the exciplex emission in the heterojunction structures, were studied in the present paper. Experimental results showed that the phase separation between the small and the polymer molecules in the blend film is enhanced with increasing the annealing temperature, which leads to the crystallization of the EPPTC molecules due to the strong pi-pi stacking. The size of the crystal phase increases with increasing the annealing temperature. However, this process weakens the mechanisms of the heterojunction configuration, thus, the total interfacial area between the small and the polymer molecules and the amount of exciplex are reduced significantly in the blend film. Meanwhile, the energy transfer from the polymer to the small molecules is also reduced. As a result, the emission from the exciplex becomes weaker with increasing the annealing temperature, whereas the stronger emission from the polymer molecules and from the crystal phase of the small molecules can be observed. These experimental results are very important for understanding and tailoring the organic heterojunction structures. Furthermore, this provides photophysics for improving the performance of photovoltaic or solar cell devices.

  18. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  19. Electron temperature from x-ray continuum measurements on the NIF

    Science.gov (United States)

    Jarrott, Leonard; Bachmann, Benjamin; Benedetti, Robin; Izumi, Nobuhiko; Khan, Shahab; Landen, Otto; Ma, Tammy; Nagel, Sabrina; Pak, Arthur; Patel, Prav; Schneider, Marilyn; Springer, Paul; LLNL Collaboration

    2017-10-01

    We report on measurements of the electron temperature within the hot spot of inertially confined, layered implosions on the NIF using a titanium differential filtering x-ray diagnostic. The electron temperature from x-ray emission is insensitive to non-thermal velocity flows as is the case with ion temperature measurements and is thus a critical parameter in interpreting stagnated hot spot conditions. Here we discuss measurements using titanium filters ranging from 10 μm to 1mm in thickness with a sensitivity band of 10-30keV coupled with penumbral pinholes. The use of larger pinhole diameters increases x-ray fluence improving sensitivity of photon energies with minimal attenuation from the compressed fuel/shell. This diagnostic has been fielded on a series of cryogenic shots with DT ion temperatures ranging from 2-5keV. Analysis of the measurement will be presented along with a comparison against simulated electron temperatures and x-ray spectra as well as a comparison to DT ion temperature measurements. This work was performed under the auspices of U.S. DoE by LLNL under Contract No. DE-AC52-07NA27344.

  20. Inclined inheritance of interface roughness in semiconductor superlattices as characterized by x-ray reciprocal space mapping

    International Nuclear Information System (INIS)

    Schmidbauer, M.; Opitz, R.; Wiebach, Th.; Koehler, R.

    2001-01-01

    The inclined inheritance of interface roughness is investigated for an AlASGaAs superlattice grown by molecular beam epitaxy on a vicinal (001) GaAs substrate. As a consequence of vertical correlation of the roughness of subsequent interfaces the diffusely scattered x-ray intensity is bunched into resonant diffuse scattering (RDS) sheets in reciprocal space. Inclined inheritance leads to corresponding shearing of the RDS sheets. A simple model for the evaluation of inclined roughness inheritance in three dimensions is presented, where the sheared RDS sheets are modeled by anisotropic sheared ellipsoids. From measurements at different azimuthal sample orientations the two angles characterizing the inclined inheritance of interface roughness can be determined accurately. At the present sample the inheritance of interface roughness approximately follows the direction of step flow during growth. The results show that a three-dimensional analysis of diffuse scattering is necessary for a correct evaluation and interpretation

  1. Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Directory of Open Access Journals (Sweden)

    D. P. Samajdar

    2014-01-01

    Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  2. Low temperature x-ray analysis and electron microscopy of a new family of superconducting materials

    International Nuclear Information System (INIS)

    Ossipyan, Yu.A.; Borodin, V.A.; Goncharov, V.A.; Kondakov, S.F.; Khasanov, S.S.; Chernyshova, L.M.; Shekhtman, V.S.; Shmyt'ko, I.M.; Stchegolev, N.F.

    1987-01-01

    Recent findings in the field of high temperature superconductivity require that structural aspects of the behavior of this class of materials be investigated in detail in a wide temperature interval. A series of superconducting ceramics on the base of lanthanum and yttrium oxides (La/sub 2-x/Sr/sub x/CuO 4 ; x = 0, 2 and YBaCuO) have been obtained in the solid state Physics Institute of the Academy of Sciences of the USSR. This paper presents the results of the analysis of powder and sintered materials, using X-ray diffractometers (DRON), scanning electron microscope and special devices, enabling the investigations to be carried out within 4.2 K - 573 K

  3. Effects of Temperature and X-rays on Plastic Scintillating Fiber and Infrared Optical Fiber.

    Science.gov (United States)

    Lee, Bongsoo; Shin, Sang Hun; Jang, Kyoung Won; Yoo, Wook Jae

    2015-05-11

    In this study, we have studied the effects of temperature and X-ray energy variations on the light output signals from two different fiber-optic sensors, a fiber-optic dosimeter (FOD) based on a BCF-12 as a plastic scintillating fiber (PSF) and a fiber-optic thermometer (FOT) using a silver halide optical fiber as an infrared optical fiber (IR fiber). During X-ray beam irradiation, the scintillating light and IR signals were measured simultaneously using a dosimeter probe of the FOD and a thermometer probe of the FOT. The probes were placed in a beaker with water on the center of a hotplate, under variation of the tube potential of a digital radiography system or the temperature of the water in the beaker. From the experimental results, in the case of the PSF, the scintillator light output at the given tube potential decreased as the temperature increased in the temperature range from 25 to 60 °C. We demonstrated that commonly used BCF-12 has a significant temperature dependence of -0.263 ± 0.028%/°C in the clinical temperature range. Next, in the case of the IR fiber, the intensity of the IR signal was almost uniform at each temperature regardless of the tube potential range from 50 to 150 kVp. Therefore, we also demonstrated that the X-ray beam with an energy range used in diagnostic radiology does not affect the IR signals transmitted via a silver halide optical fiber.

  4. Effect of P-anion codoping on the Curie temperature of GaMnAs diluted magnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Bouzerar, R.; Máca, František; Kudrnovský, Josef; Bergqvist, L.

    2010-01-01

    Roč. 82, č. 3 (2010), 035207/1-035207/6 ISSN 1098-0121 R&D Projects: GA ČR GA202/09/0775; GA ČR(CZ) GC202/07/J047 Institutional research plan: CEZ:AV0Z10100520 Keywords : GaMnAs * calculations * Curie temperature * defects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.772, year: 2010

  5. Ultrasonic acoustic levitation for fast frame rate X-ray protein crystallography at room temperature

    OpenAIRE

    Soichiro Tsujino; Takashi Tomizaki

    2016-01-01

    Increasing the data acquisition rate of X-ray diffraction images for macromolecular crystals at room temperature at synchrotrons has the potential to significantly accelerate both structural analysis of biomolecules and structure-based drug developments. Using lysozyme model crystals, we demonstrated the rapid acquisition of X-ray diffraction datasets by combining a high frame rate pixel array detector with ultrasonic acoustic levitation of protein crystals in liquid droplets. The rapid spinn...

  6. Investigation of a possible electronic phase separation in the magnetic semiconductors Ga1 -xMnxAs and Ga1 -xMnxP by means of fluctuation spectroscopy

    Science.gov (United States)

    Lonsky, Martin; Teschabai-Oglu, Jan; Pierz, Klaus; Sievers, Sibylle; Schumacher, Hans Werner; Yuan, Ye; Böttger, Roman; Zhou, Shengqiang; Müller, Jens

    2018-02-01

    We present systematic temperature-dependent resistance noise measurements on a series of ferromagnetic Ga1 -xMnxAs epitaxial thin films covering a large parameter space in terms of the Mn content x and other variations regarding sample fabrication. We infer that the electronic noise is dominated by switching processes related to impurities in the entire temperature range. While metallic compounds with x >2 % do not exhibit any significant change in the low-frequency resistance noise around the Curie temperature TC, we find indications for an electronic phase separation in films with x insulating Ga1 -xMnxP reference sample, for which the evidence for an electronic phase separation is even stronger and a possible percolation of bound magnetic polarons is discussed. Another aspect addressed in this work is the effect of ion-irradiation-induced disorder on the electronic properties of Ga1 -xMnxAs films and, in particular, whether any electronic inhomogeneities can be observed in this case. Finally, we put our findings into the context of the ongoing debate on the electronic structure and the development of spontaneous magnetization in these materials.

  7. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  8. Ge{sub 1−x}Si{sub x} on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang-Chun, E-mail: changchunlee@cycu.edu.tw [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Hsieh, Chia-Ping [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China); Huang, Pei-Chen; Cheng, Sen-Wen [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Liao, Ming-Han [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China)

    2016-03-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge{sub 1−x}Si{sub x} alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge{sub 1−x}Si{sub x} alloys, namely, Ge{sub 0.96}Si{sub 0.04}, Ge{sub 0.93}Si{sub 0.07}, and Ge{sub 0.86}Si{sub 0.14}, are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge{sub 1−x}Si{sub x} alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge{sub 0.86}Si{sub 0.14} stressor within the device channel. Furthermore, the stresses (S{sub yy}) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge{sub 1−x}Si{sub x} alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n

  9. Electrical resistivity at high temperatures of Heusler alloys of the Cu2MnAl sub(1-x) Sn sub (x)

    International Nuclear Information System (INIS)

    Grandi, T.A.

    1978-01-01

    The structural fase L2 1 of the Heusler alloys Cu 2 MnAl sub (1-x) Sn sub(x), with x varying between 0 and 1, was studied. X-ray diffraction, metallography and diferential termoanalysis techniques were employed. For the alloys with x = 0; 0,05; 0,10 and 0,15 the electrical resistivity measurements were performed in the temperature range 300 K [pt

  10. Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Heya, Akira, E-mail: heya@eng.u-hyogo.ac.jp [Department of Materials Science and Chemistry, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671–2280 (Japan); Kanda, Kazuhiro [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan); Toko, Kaoru; Sadoh, Taizoh [Department of Electronics, Kyushu University, 744 Nishi-ku, Motooka, Fukuoka 819–0395 (Japan); Amano, Sho [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan); Matsuo, Naoto [Department of Materials Science and Chemistry, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671–2280 (Japan); Miyamoto, Shuji [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan); Miyao, Masanobu [Department of Electronics, Kyushu University, 744 Nishi-ku, Motooka, Fukuoka 819–0395 (Japan); Mochizuki, Takayasu [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan)

    2013-05-01

    The low-temperature-crystallization effects of soft X-ray irradiation on the structural properties of amorphous Si and amorphous Ge films were investigated. From the differences in crystallization between Si and Ge, it was found that the effects of soft X-ray irradiation on the crystallization strongly depended on the energy band gap and energy level. The crystallization temperatures of the amorphous Si and amorphous Ge films decreased from 953 K to 853 K and 773 K to 663 K, respectively. The decrease in crystallization temperature was also related to atoms transitioning into a quasi-nucleic phase in the films. The ratio of electron excitation and migration effects to thermal effects was controlled using the storage-ring current (photon flux density). Therefore, we believe that low-temperature crystallization can be realized by controlling atomic migration through electron excitation. - Highlights: • This work investigates the crystallization mechanism for soft X-ray irradiation. • The soft X-ray crystallization depended on the energy band gap and energy level. • The decrease in the crystallization temperature for Si and Ge films was 100 K. • This decrement was related to atoms transitioning into a quasi-nucleic phase.

  11. Thermal expansion studies on Inconel-600[reg] by high temperature X-ray diffraction

    International Nuclear Information System (INIS)

    Raju, S.; Sivasubramanian, K.; Divakar, R.; Panneerselvam, G.; Banerjee, A.; Mohandas, E.; Antony, M.P.

    2004-01-01

    The lattice thermal expansion characteristics of Inconel-600[reg] have been studied by high temperature X-ray diffraction (HT-XRD) technique in the temperature range 298-1200 K. Altogether four experimental runs were conducted on thin foils of about 75-100 μm thickness. The diffraction profiles have been accurately calibrated to offset the shift in 2θ values introduced by sample buckling at elevated temperatures. The corrected lattice parameter data have been used to estimate the instantaneous and mean linear thermal expansion coefficients as a function of temperature. The thermal expansion values estimated in the present study show a fair degree of agreement with other existing dilatometer based bulk thermal expansion estimates. The lattice parameter for this alloy at 300 K is found to be 0.3549(1) nm. The mean linear thermal expansivity is found to be 11.4 x 10 -6 K -1

  12. A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Purches, W. E. [School of Physics, UNSW, Sydney 2052 (Australia); Rossi, A.; Zhao, R. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Kafanov, S.; Duty, T. L. [School of Physics, UNSW, Sydney 2052 (Australia); Centre for Engineered Quantum Systems (EQuS), School of Physics, UNSW, Sydney 2052 (Australia); Dzurak, A. S. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia); Rogge, S.; Tettamanzi, G. C., E-mail: g.tettamanzi@unsw.edu.au [School of Physics, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia)

    2015-08-10

    Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

  13. The High Temperature Resistivity of Ba2YCu3O7-x

    Science.gov (United States)

    Xingkui, Zhang; Shining, Zhu; Hao, Wang; Shiyuan, Zhang; Su, Ye; Ningshen, Zhou; Ziran, Xu

    The high temperature resistivity (ρ), thermogravimetry (TG) and derivative thermogravimetry (DTG) have been used to characterize superconductor Ba2YCu3O7-x (BYCO) in O2, air and N2. The resistivity is linear from room temperature to 350°C and then deviate from linearity with oxygen evolution, the derivative of resistivity dρ/dT increases abruptly near orthorhombic to tetragonal phase transition. These phenomena can give good explanations for a two-band Drude model.

  14. High-temperature cuprate superconductors studied by x-ray Compton scattering and positron annihilation spectroscopies

    Science.gov (United States)

    Barbiellini, Bernardo

    2013-06-01

    The bulk Fermi surface in an overdoped (x = 0.3) single crystal of La2-xSrxCuO4 has been observed by using x-ray Compton scattering. This momentum density technique also provides a powerful tool for directly seeing what the dopant Sr atoms are doing to the electronic structure of La2CuO4. Because of wave function effects, positron annihilation spectroscopy does not yield a strong signature of the Fermi surface in extended momentum space, but it can be used to explore the role of oxygen defects in the reservoir layers for promoting high temperature superconductivity.

  15. Study of dielectric liquids at room temperature for high energy x ray Tomography

    International Nuclear Information System (INIS)

    Lepert, S.

    1989-09-01

    The detection of X rays by means of a dielectric liquid detector system, at room temperature, is discussed. The physico-chemical properties of a dielectric liquid, the construction of a cleaning device and of two electrode configurations, and the utilization of different amplifier models are studied. The results allowed the analysis and characterization of the behavior of the dielectric liquid under X ray irradiation. Data obtained is confirmed by computerized simulation. The choice of Tetramethyl-germanium for the X ray tomography, applied in nondestructive analysis, is explained. The investigation of the system parameters allowed the setting of the basis of a prototype project for a multi-detector [fr

  16. An X- and Q-band Fe3+ EPR study of nanoparticles of magnetic semiconductor Zn1−xFexO

    International Nuclear Information System (INIS)

    Misra, Sushil K.; Andronenko, S.I.; Thurber, A.; Punnoose, A.; Nalepa, A.

    2014-01-01

    EPR studies on two types of nanoparticles of Fe 3+ doped, 0.1–10%, ZnO, NL and QJ, prepared using similar chemical hydrolysis methods, in diethylene glycol, and in denatured ethanol solutions, respectively, were carried out at X-band (∼9.5 GHz) at 77 K and at Q-band (∼34.0 GHz) at 10, 80, and 295 K. To interpret the experimental results, EPR spectra were simulated by exact diagonalization of the spin-Hamiltonian matrix to identify the Fe ions at different magnetically active sites in these samples. The simulation for NL samples revealed that they contained (i) Fe 3+ ions, which substituted for Zn ions, the zero-field splitting (ZFS) parameter which has a large distribution over the sample due to oxygen vacancies in the second coordination sphere; (ii) EPR signal from surface oxygen defects; and (iii) ferromagnetically (FM) coupled Fe ions with concentration of Fe more than 1%. The EPR spectra for QJ samples are very different from those for NL samples, exhibiting only rather intense FM EPR lines. The FM and EPR spectra in NL and/or QJ samples are found to vary strongly with differences in the surface morphology of nanoparticles. - Highlights: • X and Q band EPR studies on NL and QJ nanoparticles of Fe 3+ doped ZnO at 10, 80, and 295 K. • Fe ions are present at different magnetically active sites in these samples. • NL samples consist of paramagnetic Fe 3+ ions, and ferromagnetically coupled Fe ions. • QJ samples exhibit only intense ferromagnetic lines, different from QJ. • Spectra vary strongly with the surface morphology of nanoparticles

  17. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  18. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  19. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nishiwaki, M.; Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp; Asano, H. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2015-05-07

    High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

  20. Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

    International Nuclear Information System (INIS)

    Yan-Rong, Cao; Xiao-Hua, Ma; Yue, Hao; Shi-Gang, Hu

    2010-01-01

    This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Spontaneous emission of semiconductor quantum dots in inverse opal SiO2 photonic crystals at different temperatures.

    Science.gov (United States)

    Yang, Peng; Yang, Yingshu; Wang, Yinghui; Gao, Jiechao; Sui, Ning; Chi, Xiaochun; Zou, Lu; Zhang, Han-Zhuang

    2016-02-01

    The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Finally, inverse opal SiO2 PCs suppressed the nonlinear PL enhancement of CdSe QDs in PCs excited by a continuum laser and effectively modulated the PL characteristics of CdSe QDs in PCs at high temperatures in comparison with that of CdSe QDs out of PCs. The final results are of benefit in further understanding the role of inverse opal PCs on the PL characteristics of QDs. Copyright © 2015 John Wiley & Sons, Ltd.

  2. Temperature-dependent properties of semiconductor quantum dots in coherent regime; Temperaturabhaengige Eigenschaften einzelner Halbleiter-Quantenpunkte im Kohaerenten Regime

    Energy Technology Data Exchange (ETDEWEB)

    Huebner, Marc C.

    2009-10-15

    Recently, the public has become aware of keywords like ''Quantum computer'' or ''Quantum cryptography''. Regarding their potential application in solid state based quantum information processing and their overall benefit in fundamental research quantum dots have gained more and more public interest. In this context, quantum dots are often referred to as ''artificial atoms'', a term subsuming their physical properties quite nicely and emphasizing the huge potential for further investigations. The basic mechanism to be considered is the theoretical model of a two-level system. A quantum dot itself represents this kind of system quite nicely, provided that only the presence or absence of a single exciton in the ground state of that structure is regarded. This concept can also be expanded to the presence of two excitons (bi-exciton). Transitions between the relevant levels can be induced by optical stimulation. When integrating quantum dots in diode like structures measurements of this phenomena can be accomplished regarding photo currents. This means of detection is highly sensitive and allows for tuning of the energy levels with respect to the energy of an exciting laser utilizing the Stark effect (via an external electric field). The photo current then shows narrow resonances representing those transitions. By this, the system can be used as a highly sensitive nano-spectrometer. The examination of coherent interactions between quantum dots and an electromagnetic field uses laser pulses that are much shorter than the dephasing time of the system (2 ps). The basic study to be done on two level systems is the measurement of Rabi oscillations allowing for the selection of an arbitrary superposition of states. In this work, the existing setup was improved regarding the possibility to control the temperature of the sample. Up to now, only investigations at 4,2 K have been possible. Even at 70 K Rabi oscillations

  3. Reflection technique for thermal mapping of semiconductors

    Science.gov (United States)

    Walter, Martin J.

    1989-06-20

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  4. Electrodeposited semiconductors at room temperature: an X-ray Absorption Spectroscopy study of Cu-, Zn-, S-bearing thin films

    International Nuclear Information System (INIS)

    Di Benedetto, Francesco; Cinotti, Serena; D’Acapito, Francesco; Vizza, Francesco; Foresti, Maria Luisa; Guerri, Annalisa; Lavacchi, Alessandro; Montegrossi, Giordano; Romanelli, Maurizio; Cioffi, Nicola; Innocenti, Massimo

    2015-01-01

    A SEM, DRS and XAS study was carried out on ultra-thin films with chemical composition belonging to the Cu-Zn-S ternary system, related to the kesterite-type materials, in the light of their potential application to thin film photovoltaic technology. The films, realized through the layer-by-layer E-ALD electrochemical technique, reveal variable phase composition as a function of the applied E-ALD sequence. In particular, by increasing the Zn cycles per Cu cycle from 1:1 to 9:1, the number of detected phases changes from 3 to 2. In all samples, Cu mainly crystallize in a Cu_2S type phase, whereas Zn occurs as ZnS. In the 1:1 sample, additional ZnO is detected. The variable phase composition parallels apparent changes in the sample morphology. In all samples, a sulphide thin film is covered by a net of elongated nanostructures, the length of which decreases with increasing the number of Zn cycles per Cu cycle. All these evidences are interpreted as due to the operating electrochemical route during the synthesis and confirm the lack of miscibility between Cu_2S and ZnS, thermodynamically relevant after the E-ALD has stopped. The band gap values exhibited by the three films, modulated by changing the copper:zinc ratio, progressively approach a value useful for solar energy conversion, thus strongly proposing these new sulfide nanomaterials for photovoltaics and photochemical applications.

  5. Temperature effect on X-ray photoelectron spectra of 3d transition metal ions

    International Nuclear Information System (INIS)

    Kochur, A.G.; Kozakov, A.T.; Yavna, V.A.; Daniel, Ph.

    2014-01-01

    Highlights: • 2p XPS of 3d metal ions are calculated in an isolated ion approximation. • 2p XPS of Ti, V, Cr, Mn, Fe ions are temperature dependent even at room temperature. • Temperature effect on 3p XPS is slight. • No temperature effect on 3s XPS is discovered. - Abstract: Temperature effect on 2p- 3s- and 3p X-ray photoelectron spectra (XPS) of various ions of Ti, V, Cr, Mn and Fe is studied theoretically within an isolated ion approximation. It is shown that the 2p XPS of those ions are temperature dependent even at room temperature due to a very slight energy splitting between the ground-state-term total-momentum J-components which can be thermally populated. Most significant temperature effect is expected in the 2p-spectra of Ti 2+ (3d 2 ), V 2+ (3d 3 ), Cr 2+ (3d 4 ), Mn 3+ (3d 4 ), and Mn 3+ (3d 4 ) ions. The temperature effect on 3p XPS is slight. No temperature effect on 3s XPS is expected

  6. Nanocalorimeter platform for in situ specific heat measurements and x-ray diffraction at low temperature

    Science.gov (United States)

    Willa, K.; Diao, Z.; Campanini, D.; Welp, U.; Divan, R.; Hudl, M.; Islam, Z.; Kwok, W.-K.; Rydh, A.

    2017-12-01

    Recent advances in electronics and nanofabrication have enabled membrane-based nanocalorimetry for measurements of the specific heat of microgram-sized samples. We have integrated a nanocalorimeter platform into a 4.5 T split-pair vertical-field magnet to allow for the simultaneous measurement of the specific heat and x-ray scattering in magnetic fields and at temperatures as low as 4 K. This multi-modal approach empowers researchers to directly correlate scattering experiments with insights from thermodynamic properties including structural, electronic, orbital, and magnetic phase transitions. The use of a nanocalorimeter sample platform enables numerous technical advantages: precise measurement and control of the sample temperature, quantification of beam heating effects, fast and precise positioning of the sample in the x-ray beam, and fast acquisition of x-ray scans over a wide temperature range without the need for time-consuming re-centering and re-alignment. Furthermore, on an YBa2Cu3O7-δ crystal and a copper foil, we demonstrate a novel approach to x-ray absorption spectroscopy by monitoring the change in sample temperature as a function of incident photon energy. Finally, we illustrate the new insights that can be gained from in situ structural and thermodynamic measurements by investigating the superheated state occurring at the first-order magneto-elastic phase transition of Fe2P, a material that is of interest for magnetocaloric applications.

  7. Oxidation of X20 in Water Vapour: The Effect of Temperature and Oxygen Partial Pressure

    DEFF Research Database (Denmark)

    Hansson, Anette Nørgaard; Montgomery, Melanie; Somers, Marcel A. J.

    2009-01-01

    The oxidation behaviour of X20 in various mixtures of water, oxygen and hydrogen was investigated at temperatures between 500 C and 700 C (time: 336 h). The samples were characterised using reflected light microscopy and scanning electron microscopy equipped with energy dispersive spectroscopy...

  8. Effect of temperature upon the fatigue-crack propagation behavior of Hastelloy X-280

    International Nuclear Information System (INIS)

    James, L.A.

    1976-05-01

    The techniques of linear-elastic fracture mechanics were employed to characterize the effect of temperature upon the fatigue-crack propagation behavior of Hastelloy X-280 in an air environment. Also included in this study are survey tests to determine the effects of thermal aging and stress ratio upon crack growth behavior in this alloy

  9. Analysis of reactivity feedback effects of void and temperature in the MAPLE-X10 reactor

    International Nuclear Information System (INIS)

    Carlson, P.A.; Heeds, W.; Shim, S.Y.; King, S.G.

    1992-07-01

    The methods used for evaluating the void and temperature reactivity coefficients for the MAPLE-X10 Reactor are described and factors used in estimating their accuracy are discussed. The report presents representative transient analysis results using the CATHENA thermalhydraulics code. The role of the reactivity coefficients and their precision is discussed. The results are reviewed in terms of their safety implications

  10. Opening of cut Iris x hollandica flowers as affected by temperature, dry storage, and light

    NARCIS (Netherlands)

    Doorn, van W.G.; Dole, I.; Celikel, F.G.; Harkema, H.

    2014-01-01

    Flower opening in Iris (Iris x hollandica) depends on elongation of the pedicel + ovary. This elongation lifts the bud above the point where the sheath leaves no longer mechanically inhibit lateral tepal movement. We here report on the effects on flower opening of storage at various temperatures, of

  11. An X- and Q-band Fe3+ EPR study of nanoparticles of magnetic semiconductor Zn1-xFexO

    Science.gov (United States)

    Misra, Sushil K.; Andronenko, S. I.; Thurber, A.; Punnoose, A.; Nalepa, A.

    2014-08-01

    EPR studies on two types of nanoparticles of Fe3+ doped, 0.1-10%, ZnO, NL and QJ, prepared using similar chemical hydrolysis methods, in diethylene glycol, and in denatured ethanol solutions, respectively, were carried out at X-band (~9.5 GHz) at 77 K and at Q-band (~34.0 GHz) at 10, 80, and 295 K. To interpret the experimental results, EPR spectra were simulated by exact diagonalization of the spin-Hamiltonian matrix to identify the Fe ions at different magnetically active sites in these samples. The simulation for NL samples revealed that they contained (i) Fe3+ ions, which substituted for Zn ions, the zero-field splitting (ZFS) parameter which has a large distribution over the sample due to oxygen vacancies in the second coordination sphere; (ii) EPR signal from surface oxygen defects; and (iii) ferromagnetically (FM) coupled Fe ions with concentration of Fe more than 1%. The EPR spectra for QJ samples are very different from those for NL samples, exhibiting only rather intense FM EPR lines. The FM and EPR spectra in NL and/or QJ samples are found to vary strongly with differences in the surface morphology of nanoparticles.

  12. A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors

    Science.gov (United States)

    Djezzar, Boualem; Tahi, Hakim; Benabdelmoumene, Abdelmadjid; Chenouf, Amel; Kribes, Youcef

    2012-11-01

    In this paper, we present a new method, named on the fly oxide trap (OTFOT), to extract the bias temperature instability (BTI) in MOS transistors. The OTFOT method is based on charge pumping technique (CP) at low and high frequencies. We emphasize on the theoretical-based concept, giving a clear insight on the easy-use of the OTFOT methodology and demonstrating its viability to characterize the negative BTI (NBTI). Using alternatively high and low frequencies, OTFOT method separates the interface-traps (ΔNit) and border-trap (ΔNbt) (switching oxide-trap) densities independently and also their contributions to the threshold voltage shift (ΔVth), without needing additional methods. The experimental results, from two experimental scenarios, showing the extraction of NBTI-induced shifts caused by interface- and oxide-trap increases are also presented. In the first scenario, all stresses are performed on the same transistor. It exhibits an artifact value of exponent n. In the second scenario, each voltage stress is applied only on one transistor. Its results show an average n of 0.16, 0.05, and 0.11 for NBTI-induced ΔNit, ΔNbt, ΔVth, respectively. Therefore, OTFOT method can contribute to further understand the behavior of the NBTI degradation, especially through the threshold voltage shift components such as ΔVit and ΔVot caused by interface-trap and border-trap, respectively.

  13. Low temperature features of the local structure of Sm1-xYxS

    International Nuclear Information System (INIS)

    Menushenkov, A. P.; Chernikov, R. V.; Sidorov, V. V.; Klementiev, K. V.; Alekseev, P. A.; Rybina, A. V.

    2007-01-01

    The particular features of the local electronic and local crystal structures of the mixed-valence compound Sm 1-x Y x S are studied by the XAFS spectroscopy methods in the temperature range 20-300 K for the yttrium concentration x = 0.17, 0.25, 0.33, and 0.45. The temperature behavior of the valence of Sm, as well as of the lengths and the Debye-Waller factors of the bonds Sm-S, Sm-Sm(Y), Y-S, and Y-Sm(Y), has been determined. The violation of the Vegard law has been observed. A model for the estimation of the energy width of the 4f level and of its position with respect to the Fermi level is proposed

  14. High-resolution X-ray spectra from low-temperature, highly charged ions

    International Nuclear Information System (INIS)

    Beiersdorfer, P.

    1996-09-01

    The electron beam ion traps (EBIT) at Livermore were designed for studying the x-ray emission of highly charged ions produced and excited by a monoenergetic electron beam. The precision with which the x-ray emission can be analyzed has recently been increased markedly when it became possible to decouple the temperature of the ions from the energy of the electron beam by several orders of magnitude. By adjusting the trap parameters, ion temperatures as low as 15.8±4.4 eV for Ti 20+ and 59.4±9.9 eV for Cs 45+ were achieved. These temperatures were more than two orders of magnitude lower than the energy of the multi-keV electron beam used for the production and excitation of the ions. A discussion of the techniques used to produce and study low-temperature highly charged ions is presented in this progress report. The low ion temperatures enabled measurements heretofore impossible. As an example, a direct observation of the natural line width of fast electric dipole allowed x-ray transitions is described. From the observed natural line width and b making use of the time-energy relations of the uncertainty principle we were able to determine a radiative transition rate of 1.65 fs for the 2p-3d resonance transition in neonlike Cs 45+ . A brief discussion of other high-precision measurements enabled by our new technique is also given

  15. Room temperature femtosecond X-ray diffraction of photosystem II microcrystals

    Science.gov (United States)

    Kern, Jan; Alonso-Mori, Roberto; Hellmich, Julia; Tran, Rosalie; Hattne, Johan; Laksmono, Hartawan; Glöckner, Carina; Echols, Nathaniel; Sierra, Raymond G.; Sellberg, Jonas; Lassalle-Kaiser, Benedikt; Gildea, Richard J.; Glatzel, Pieter; Grosse-Kunstleve, Ralf W.; Latimer, Matthew J.; McQueen, Trevor A.; DiFiore, Dörte; Fry, Alan R.; Messerschmidt, Marc; Miahnahri, Alan; Schafer, Donald W.; Seibert, M. Marvin; Sokaras, Dimosthenis; Weng, Tsu-Chien; Zwart, Petrus H.; White, William E.; Adams, Paul D.; Bogan, Michael J.; Boutet, Sébastien; Williams, Garth J.; Messinger, Johannes; Sauter, Nicholas K.; Zouni, Athina; Bergmann, Uwe; Yano, Junko; Yachandra, Vittal K.

    2012-01-01

    Most of the dioxygen on earth is generated by the oxidation of water by photosystem II (PS II) using light from the sun. This light-driven, four-photon reaction is catalyzed by the Mn4CaO5 cluster located at the lumenal side of PS II. Various X-ray studies have been carried out at cryogenic temperatures to understand the intermediate steps involved in the water oxidation mechanism. However, the necessity for collecting data at room temperature, especially for studying the transient steps during the O–O bond formation, requires the development of new methodologies. In this paper we report room temperature X-ray diffraction data of PS II microcrystals obtained using ultrashort (< 50 fs) 9 keV X-ray pulses from a hard X-ray free electron laser, namely the Linac Coherent Light Source. The results presented here demonstrate that the ”probe before destroy” approach using an X-ray free electron laser works even for the highly-sensitive Mn4CaO5 cluster in PS II at room temperature. We show that these data are comparable to those obtained in synchrotron radiation studies as seen by the similarities in the overall structure of the helices, the protein subunits and the location of the various cofactors. This work is, therefore, an important step toward future studies for resolving the structure of the Mn4CaO5 cluster without any damage at room temperature, and of the reaction intermediates of PS II during O–O bond formation. PMID:22665786

  16. Low Temperature X-Ray Diffraction Study on CaFe2As2

    Science.gov (United States)

    Huyan, Shuyuan; Deng, Liangzi; Wu, Zheng; Zhao, Kui; Lv, Bing; Xue, Yiyu; Chu, Ching-Wu; B. Lv Collaboration; HPLT (Paul C. W. Chu) Team

    For undoped CaFe2As2 single crystals, we observed that utilizing thermal treatments could stabilize two pure tetragonal phases PI and PII. Both phases are non-superconducting, while the superconductivity with a Tc up to 25 K can be induced through proper thermal treatment. Room temperature X-ray studies suggest that the origin of superconductivity arises from the interface of the mesoscopically stacked layers of PI and PII. To further investigate, a systematic low temperature X-ray study was conducted over a series of thermal treated CaFe2As2 single crystals. From which, we observed the phase aggregation of PI and PII upon cooling, more importantly, an ordered stacking structure exists at low temperature, which closely related to superconducting volume fraction and the ratio of PI and PII. These results further support the proposal of interface-enhanced superconductivity in undoped CaFe2As2. UT Dallas

  17. Synthesis and characterization of a new organic semiconductor material

    International Nuclear Information System (INIS)

    Tiffour, Imane; Dehbi, Abdelkader; Mourad, Abdel-Hamid I.; Belfedal, Abdelkader

    2016-01-01

    The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε_r, the activation energy E_a, the optical transmittance T and the gap energy E_g have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10"−"5 S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10"−"4 S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ_m_a_x) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

  18. High temperature X-ray topography on silicon and gallium arsenide

    International Nuclear Information System (INIS)

    Krueger, H.E.

    1976-01-01

    Beginning with a review of the different theories of X-ray scattering on perfect and deformed crystals, results of the dynamic theory relevant specifically for X-ray topography are presented. The reflected intensity recorded in a X-ray topogram is discussed as a function of the angle of incidence, crystal thickness and lateral distribution. These results, together with fundamental relations of the DT which are developed in the annex, give insight into the contrasts induced by defects. Using practical examples Borrmann contrast, contrast produced by point defect agglomerates and dislocations and the Burgers vector method are explained. Thus the whole spectrum of contrast phenomena observed in the experimental part of the paper is presented. The experimental results were achieved with a high-temperature X-ray topography facility constructed for this purpose. The facility is described. (orig./HPOE) [de

  19. Short-term variability of Cyg X-1 and the accretion disk temperature fluctuation

    International Nuclear Information System (INIS)

    Doi, K.

    1980-01-01

    Recent theoretical models which have been proposed to explain the observed time-averaged spectrum of Cyg X-1 assume that the hard x-rays are emitted by inverse-Compton mechanism from an optically thin, hot accretion disk around a black hole. Results are reported here of balloon observations (20-68 keV) and compared with previous rocket observations (1.5-25 keV). Using the results an analysis is made of the variability of the source intensity in the hard x-ray range which suggests that the variation is essentially spectral indicating that it originated from temperature fluctuation in an accretive disk. Such a model, which explains the stochastic nature of the variability, its characteristic time scale and spectral features at the same time in the context of the conventional accretion disk model for Cyg X-1, is examined. (U.K.)

  20. X-ray Heating and Electron Temperature of Laboratory Photoionized Plasmas

    Science.gov (United States)

    Mancini, Roberto; Lockard, Tom; Mayes, Daniel C.; Loisel, Guillaume; Bailey, James E.; Rochau, Gregory; Abdallah, J.; Golovkin, I.

    2018-06-01

    In separate experiments performed at the Z facility of Sandia National Laboratories two different samples were employed to produce and characterize photoionized plasmas. One was a gas cell filled with neon, and the other was a thin silicon layer coated with plastic. Both samples were driven by the broadband x-ray flux produced at the collapse of a wire array z-pinch implosion. Transmission spectroscopy of a narrowband portion of the x-ray flux was used to diagnose the charge state distribution, and the electron temperature was extracted from a Li-like ion level population ratio. To interpret the temperature measurement, we performed Boltzmann kinetics and radiation-hydrodynamic simulations. We found that non-equilibrium atomic physics and the coupling of the radiation flux to the atomic level population kinetics play a critical role in modeling the x-ray heating of photoionized plasmas. In spite of being driven by similar x-ray drives, differences of ionization and charged state distributions in the neon and silicon plasmas are reflected in the plasma heating and observed electron temperatures.This work was sponsored in part by DOE Office of Science Grant DE-SC0014451, and the Z Facility Fundamental Science Program of SNL.

  1. Structural, magnetic and optical properties of a dilute magnetic semiconductor based on Ce{sub 1−x}Co{sub x}O{sub 2} thin film grown on LaAlO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mahmoud, Waleed E., E-mail: w_e_mahmoud@yahoo.com [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Suez Canal University, Faculty of Science, Department of Physics, Ismailia (Egypt); Al-Ghamdi, A.A. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Al-Agel, F.A. [Hail University, College of Science, Department of Physics, Hail (Saudi Arabia); Al-Arfaj, E. [Umm Alqura University, Department of Physics, Makkah (Saudi Arabia); Qassim University, College of Science, Physics Department, Buraidah 5145 (Saudi Arabia); Shokr, F.S. [King Abdulaziz University, Faculty of Science & Arts, Department of Physics, Rabigh (Saudi Arabia); Al-Gahtany, S.A. [King Abdulaziz University, Faculty of Science for Girls, Department of Physics, Jeddah (Saudi Arabia); Alshahrie, Ahmed [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Jalled, Ouissem [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Laboratory of Applied Mineral Chemistry, Department of Chemistry, University Tunis ElManar, Faculty of Sciences, Campus 2092, Tunis (Tunisia); Bronstein, L.M. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States); Beall, Gary W. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Indiana University, Department of Chemistry, Bloomington, IN 47405 (United States)

    2015-12-15

    Highlights: • Co doped CeO{sub 2} was grown on LaAlO{sub 3} (0 0 1) via a modified sol–gel spin-coating technique. • The concentration of the Co ions was varied from 1 to 15 at.%. • The incorporation of 5 at.% of Mn ions was found to provide formation of exceptionally magnetic moment. • This amount demonstrated a giant magnetic moment of 1.09 μ{sub B}/Co. • This amount reduced the optical band gap and enhanced the optical performance. - Abstract: The enhancement of the room temperature ferromagnetism and optical properties of the dilute magnetic metal oxides is a crucial clue to construct spin-based optoelectronic devices. In this work, Ce{sub 1−x}Co{sub x}O{sub 2} (0.01 ≤ x ≤0.15) thin films were prepared via ethylene glycol modified sol–gel spin coating technique on the LaAlO{sub 3} (0 0 1) substrate to enhance their room temperature ferromagnetism and optical properties. The structures, magnetic and optical properties of the prepared films were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, SQUID magnetometer, X-ray photoelectron spectroscopy and UV–vis spectrophotometer. The results demonstrated that a single phase cubic structure was formed, implying the substitution of Co ions into the Ce ions sites. The prepared films showed room temperature ferromagnetism with saturation magnetic moment of 1.09 μ{sub B}/Co was achieved for 5 at.% Co-doped CeO{sub 2}. This film exhibited high optical transparency of 85% and low optical band energy gap of 3.39 eV. The improved magnetic and optical properties are argued to the increase of the density of the oxygen vacancies into the cerium oxide crystal structure due to the incorporation of Co ions.

  2. Electrical transport in La1−xCaxMnO3 thin films at low temperatures

    Indian Academy of Sciences (India)

    quadratic temperature dependence at low temperatures is attributed to the collapse of the minority spin band. The two-magnon and electron–phonon processes contribute to scattering of carriers in the temperature range above 120 K. Keywords. La1−x Cax MnO3 thin films; electrical transport; low temperature resistivity; ...

  3. Temperature dependence of the EPR spectra for the Ni{sub 1-x}Co{sub x}Fe{sub 2}O{sub 4} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    P, Silva; W, Braemer; F, Torres [Institute Venezolano de Investigaciones Cientificas, Centro de Fisica, Carretera Panamericana Km. 11, Aptdo. 20632 (Venezuela, Bolivarian Republic of); V, Sagredo; E, Perez, E-mail: silva@ivic.v [Universidad de Los Andes, Departamento de Fisica, Laboratorio de Magnetismo, Merida (Venezuela, Bolivarian Republic of)

    2010-01-01

    Electron Paramagnetic Resonance (EPR) was used to study, the temperature dependence, of the magnetic behavior of Ni{sub 1-x}Co{sub x}Fe{sub 2}O{sub 4} with 0.0 < x < 0.5, in the temperature range 80 < T < 700 K. Nanoparticles of sizes between 30 and 40 nm were obtained using the sol-gel method. The results show that the resonance field (H{sub R}) decrease while the linewidth (AH{sub PP}) increase, in the temperature range studied, when x is increased. The H{sub R} values for x = 0 are in agreement with a superparamagnetic phase in the temperature range studied, while for x = 0.2, H{sub R} and {Delta}H{sub PP} are in accordance with a ferri to superparamagnetic transition at T{approx}350 K, where T is related to the EPR blocking temperature of these samples. For sample with x = 0.5 this temperature is T{approx}470 K. These results are in good agreement with the magnetization and MOKE results. MOKE measurements as a function of temperature were made to corroborate EPR results.

  4. Temperature gradient method for lipid phase diagram construction using time-resolved x-ray diffraction

    International Nuclear Information System (INIS)

    Caffrey, M.; Hing, F.S.

    1987-01-01

    A method that enables temperature-composition phase diagram construction at unprecedented rates is described and evaluated. The method involves establishing a known temperature gradient along the length of a metal rod. Samples of different compositions contained in long, thin-walled capillaries are positioned lengthwise on the rod and equilibrated such that the temperature gradient is communicated into the sample. The sample is then moved through a focused, monochromatic synchrotron-derived x-ray beam and the image-intensified diffraction pattern from the sample is recorded on videotape continuously in live-time as a function of position and, thus, temperature. The temperature at which the diffraction pattern changes corresponds to a phase boundary, and the phase(s) existing (coexisting) on either side of the boundary can be identified on the basis of the diffraction pattern. Repeating the measurement on samples covering the entire composition range completes the phase diagram. These additional samples can be conveniently placed at different locations around the perimeter of the cylindrical rod and rotated into position for diffraction measurement. Temperature-composition phase diagrams for the fully hydrated binary mixtures, dimyristoylphosphatidylcholine (DMPC)/dipalmitoylphosphatidylcholine (DPPC) and dipalmitoylphosphatidylethanolamine (DPPE)/DPPC, have been constructed using the new temperature gradient method. They agree well with and extend the results obtained by other techniques. In the DPPE/DPPC system structural parameters as a function of temperature in the various phases including the subgel phase are reported. The potential limitations of this steady-state method are discussed

  5. Study about uranium oxides at high temperature by X-ray diffraction

    International Nuclear Information System (INIS)

    Costa, M.I.

    1978-01-01

    In this work a technique to study the lattice parameters in the crystalline substances at hight temperature by X-rays diffraction is developed. The results obtained agree very well with the experimental data found in the literature. The crystalline structure of uranium oxide at different temperature is studied in detail by this technique. At the range of the temperature investigated, i.e., 20 0 C to 640 0 C, the following forms for uranium oxide: U 3 O 8 in its hexagonal modification, cubic UO 2 , cubic U 4 O 9 and tetragonal U 3 O 7 is observed. The appearance of two hexagonal units observed in this work is identified by Milne. A good reproducibillity is observed for measurements at the same temperature [pt

  6. An X-ray camera for single-crystal studies at high temperatures under controlled atmosphere

    International Nuclear Information System (INIS)

    Adlhart, W.; Tzafaras, N.; Sueno, S.; Jagodzinski, H.; Huber, H.

    1982-01-01

    A vacuum heating camera has been developed for extremely low background X-ray film work between room temperature and 2000 K. It can be used with modified conventional Weissenberg goniometers and with a specially designed focusing goniometer. The temperature control is maintained by a Pt/Pt-10% Rh thermocouple, a three-term proportional, integral and derivative (PID) controller and a programmable power supply. The accuracy in the absolute temperature setting is 10 K, the stability better than 1 K and the maximum thermal gradient over the crystal 7 K mm -1 at 1330 K. A small oxygen pressure can be applied, depending on the temperature, to control oxidation or reduction reactions of the sample. (Auth.)

  7. Effect of annealing temperature on the electrical properties of Au/Ta{sub 2}O{sub 5}/n-GaN metal-insulator-semiconductor (MIS) structure

    Energy Technology Data Exchange (ETDEWEB)

    Prasanna Lakshmi, B.; Rajagopal Reddy, V.; Janardhanam, V. [Sri Venkateswara University, Department of Physics, Tirupati (India); Siva Pratap Reddy, M.; Lee, Jung-Hee [Kyungpook National University, School of Electrical Engineering and Computer Science, Daegu (Korea, Republic of)

    2013-11-15

    We report on the effect of an annealing temperature on the electrical properties of Au/Ta{sub 2}O{sub 5}/n-GaN metal-insulator-semiconductor (MIS) structure by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The measured Schottky barrier height ({Phi} {sub bo}) and ideality factor n values of the as-deposited Au/Ta{sub 2}O{sub 5}/n-GaN MIS structure are 0.93 eV (I-V) and 1.19. The barrier height (BH) increases to 1.03 eV and ideality factor decreases to 1.13 upon annealing at 500 {sup circle} C for 1 min under nitrogen ambient. When the contact is annealed at 600 {sup circle} C, the barrier height decreases and the ideality factor increases to 0.99 eV and 1.15. The barrier heights obtained from the C-V measurements are higher than those obtained from I-V measurements, and this indicates the existence of spatial inhomogeneity at the interface. Cheung's functions are also used to calculate the barrier height ({Phi} {sub bo}), ideality factor (n), and series resistance (R{sub s}) of the Au/Ta{sub 2}O{sub 5}/n-GaN MIS structure. Investigations reveal that the Schottky emission is the dominant mechanism and the Poole-Frenkel emission occurs only in the high voltage region. The energy distribution of interface states is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. It is observed that the density value of interface states for the annealed samples with interfacial layer is lower than that of the density value of interface states of the as-deposited sample. (orig.)

  8. SOFT X-RAY TEMPERATURE TIDAL DISRUPTION EVENTS FROM STARS ON DEEP PLUNGING ORBITS

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Lixin; McKinney, Jonathan C.; Miller, M. Coleman, E-mail: cosimo@umd.edu [Department of Astronomy and Joint Space-Science Institute, University of Maryland, College Park, MD 20742 (United States)

    2015-10-20

    One of the puzzles associated with tidal disruption event candidates (TDEs) is that there is a dichotomy between the color temperatures of a few × 10{sup 4} K for TDEs discovered with optical and UV telescopes and the color temperatures of a few × 10{sup 5}–10{sup 6} K for TDEs discovered with X-ray satellites. Here, we propose that high-temperature TDEs are produced when the tidal debris of a disrupted star self-intersects relatively close to the supermassive black hole, in contrast to the more distant self-intersection that leads to lower color temperatures. In particular, we note from simple ballistic considerations that greater apsidal precession in an orbit is the key to closer self-intersection. Thus, larger values of β, the ratio of the tidal radius to the pericenter distance of the initial orbit, are more likely to lead to higher temperatures of more compact disks that are super-Eddington and geometrically and optically thick. For a given star and β, apsidal precession also increases for larger black hole masses, but larger black hole masses imply a lower temperature at the Eddington luminosity. Thus, the expected dependence of the temperature on the mass of the black hole is non-monotonic. We find that in order to produce a soft X-ray temperature TDE, a deep plunging stellar orbit with β > 3 is needed and a black hole mass of ≲5 × 10{sup 6}M{sub ⊙} is favored. Although observations of TDEs are comparatively scarce and are likely dominated by selection effects, it is encouraging that both expectations are consistent with current data.

  9. Interior Temperature Measurement Using Curved Mercury Capillary Sensor Based on X-ray Radiography

    Science.gov (United States)

    Chen, Shuyue; Jiang, Xing; Lu, Guirong

    2017-07-01

    A method was presented for measuring the interior temperature of objects using a curved mercury capillary sensor based on X-ray radiography. The sensor is composed of a mercury bubble, a capillary and a fixed support. X-ray digital radiography was employed to capture image of the mercury column in the capillary, and a temperature control system was designed for the sensor calibration. We adopted livewire algorithms and mathematical morphology to calculate the mercury length. A measurement model relating mercury length to temperature was established, and the measurement uncertainty associated with the mercury column length and the linear model fitted by least-square method were analyzed. To verify the system, the interior temperature measurement of an autoclave, which is totally closed, was taken from 29.53°C to 67.34°C. The experiment results show that the response of the system is approximately linear with an uncertainty of maximum 0.79°C. This technique provides a new approach to measure interior temperature of objects.

  10. Effect of temperature on the elastic-plastic fracture toughness behavior of Inconel X-750

    International Nuclear Information System (INIS)

    Mills, W.J.

    1977-09-01

    The elastic-plastic J/sub Ic/ fracture toughness response of precipitation heat treated Inconel X-750 has been evaluated by the multi-specimen resistance curve (R-curve) technique at room temperature, 800 0 F (427 0 C), and 1000 0 F (538 0 C). The value of J/sub Ic/ for this nickel-base superalloy was found to be relatively independent of temperature over the test temperature range. On the other hand, the slopes of the fracture toughness R-curves were steeper at 800 and 1000 0 F (427 and 538 0 C) than at 75 0 F (24 0 C), thereby indicating that the resistance to crack extension was considerably greater at elevated temperatures, Metallographic and electron fractographic examination of the Inconel X-750 fracture surfaces revealed that this slope change phenomenon was associated with an intergranular to transgranular fracture mechanism transition. Under room temperature conditions, crack extension occurred primarily by an intergranular dimple rupture mechanism attributed to microvoid coalescence along a grain boundary denuded region. In the 800 to 1000 0 F (427 to 538 0 C) regime, the fracture surface was dominated by a faceted transgranular morphology

  11. Mn-AlInN: a new diluted magnetic semiconductor

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar; Sharif, Rehana; Zhu, J.J.

    2009-01-01

    Mn ions have been incorporated into MOCVD grown Al 1-x In x N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at ∝260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T c above room temperature is assumed to be associated to the layer having higher Mn concentration. (orig.)

  12. Mn-AlInN: a new diluted magnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul; Ali, Akbar [Quaid-i-Azam University, Advance Materials Physics Laboratory, Physics Department, Islamabad (Pakistan); Sharif, Rehana [University of Engineering and Technology, Department of Physics, Lahore (Pakistan); Zhu, J.J. [Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Beijing (China)

    2009-09-15

    Mn ions have been incorporated into MOCVD grown Al{sub 1-x}In{sub x}N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at {proportional_to}260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T{sub c} above room temperature is assumed to be associated to the layer having higher Mn concentration. (orig.)

  13. Insights on semiconductor-metal transition in indium-doped zinc oxide from x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry and x-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Saw, K. G., E-mail: kgsaw@usm.my; Aznan, N. M., E-mail: nanieaz1004@gmail.com [Physics Programme, School of Distance Education, Universiti Sains Malaysia, 11800 Penang (Malaysia); Yam, F. K., E-mail: yamfk@yahoo.com; Ng, S. S., E-mail: shashiong@usm.my [Nano-optoelectronics Research Laboratory, Universiti Sains Malaysia, 11800 Penang (Malaysia); Pung, S. Y., E-mail: sypung@usm.my [School of Materials and Mineral Resources Eng., Universiti Sains Malaysia, 14300 Nibong Tebal (Malaysia)

    2016-07-06

    ZnO thin films doped with various amounts of In impurities were prepared by magnetron sputtering at a substrate temperature of 150°C. The shift in optical bandgap of the In-doped ZnO films is studied as a function of carrier concentration. Nominally doped ZnO films exhibit an increase in the measured optical band gap known as the Burstein-Moss effect. Dominant band gap narrowing is observed with increased doping. XPS and TOFSIMS analyses confirm that In is incorporated in the ZnO material. The In 3d peaks show that no metallic In is present as a result of heavy doping. The XRD phase analysis shows a preferential c-axis growth but a shift of the ZnO (002) peak to lower 2-theta values with increasing FWHM as the carrier concentration increases indicates the decline in the quality of crystallinity. An elongation of the c lattice constant is also observed and is likely to be caused by intersitital In as the amount of In dopants increases. The incorporation of In induces a semiconductor-metal transition between the carrier concentrations of 3.58 – 5.61×10{sup 19} cm{sup −3} and structural changes in the ZnO host material.

  14. Temperature- and density-dependent x-ray scattering in a low-Z plasma

    International Nuclear Information System (INIS)

    Brown, R.T.

    1976-06-01

    A computer program is described which calculates temperature- and density-dependent differential and total coherent and incoherent x-ray scattering cross sections for a low-Z scattering medium. Temperature and density are arbitrary within the limitations of the validity of local thermodynamic equilbrium, since ionic populations are calculated under this assumption. Scattering cross sections are calculated in the form factor approximation. The scattering medium may consist of any mixure of elements with Z less than or equal to 8, with this limitation imposed by the availability of atomic data

  15. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  16. Temperature-dependent evolution of RbBSi2O6 glass into crystalline Rb-boroleucite according to X-ray diffraction data

    International Nuclear Information System (INIS)

    Levin, Aleksandr A.; Filatov, Stanislav K.; Krzhizhanovskaya, Maria G.; Paufler, Peter; Bubnova, Rimma S.; Russian Academy of Sciences, St. Petersburg; Meyer, Dirk C.; Technische Univ. Bergakademie Freiberg

    2013-01-01

    The temperature-dependent evolution of the glass into a crystalline phase is studied for a rubidium borosilicate glass of composition 16.7 Rb 2 O . 16.7 B 2 O 3 . 66.6 SiO 2 employing X-ray diffraction (XRD) data. A glass sample was prepared by melt quenching from 1500 within 0.5 hour. The glass sample was step-wise annealed at 13 distinct temperatures from 300 C up to 900 C for 1 h at every annealing step. To investigate changes in the glass structure, angle-dispersive XRD was applied by using an energy-resolving semiconductor detector. The radial distribution functions (RDFs) were calculated at every stage. For polycrystalline states the crystal structure of the samples with different thermal history was refined using the Rietveld method. Comparing correlation distances estimated from RDFs of glass and polycrystalline samples and mean interatomic distances calculated for polycrystalline samples by using atomic coordinates after Rietveld refinement, it is concluded that the borosilicate glass under study is converted into the crystalline state in the temperature range of 625-750 C (i.e. in the temperature range close to the glass transition range 620-695 C as determined by differential scanning calorimetry by using of heating rate of 20 K/min) at an average heating rate of about 0.35 K/min. When the heating rate is increased up to 10 or 20 K/min, the crystallisation temperature shifts sharply up to 831-900 C and 878-951 C, respectively. XRD data give evidence that distinctive traces of cubic RbBSi 2 O 6 appear from glass at about 625 C and a two-phase range exists up to 750 C. After annealing at higher temperatures (800-900 C) the crystal structure practically does not change any more. (orig.)

  17. Crystallographic and oxidation kinetic study of uranium dioxide by high temperature X-ray diffractometry

    International Nuclear Information System (INIS)

    Teixeira, S.R.

    1981-01-01

    The structural behavior of UO 2 sintered plates was studied as a function of temperature by X-ray diffractometry. All the experiments were carried out under an inert atmosphere with low oxygen content (approximated 140 ppm). The thermal expansion coefficient of UO 2 05 was found to be 10,5 x 10 - 6 0 C - 1 for temperatures above 165 0 C. Structural transformations during oxidation were observed at 170,235 and 275 0 C. The isothermal oxidation of UO 2 to U 3 O 7 follows a parabolic form and the diffusion of oxygen through the product layer U 4 O 9 is the mechanism controlling the oxidation rate. The phases observed were UO 2 (cubic) - U 4 O 9 (cubic) - U 3 O 7 (tetragonal). Activation energies of oxidation were found for different crystallographic planes (hkl). From this one can conclude that there is a preferential occupation of interstitial oxygen within the UO 2 structure. (Author) [pt

  18. Heavy metal ternary halides for room-temperature x-ray and gamma-ray detection

    Science.gov (United States)

    Liu, Zhifu; Peters, John A.; Stoumpos, Constantinos C.; Sebastian, Maria; Wessels, Bruce W.; Im, Jino; Freeman, Arthur J.; Kanatzidis, Mercouri G.

    2013-09-01

    We report our recent progress on wide bandgap ternary halide compounds CsPbBr3 and CsPbCl3 for room temperature x-ray and gamma-ray detectors. Their bandgaps are measured to be 2.24 eV and 2.86 eV, respectively. The measured mobility-lifetime products of CsPbBr3 are 1.7×10-3, 1.3×10-3 cm2/V, for electron and hole carriers, respectively, comparable to those of CdTe. We measured the room temperature spectral response of CsPbBr3 sample to Ag x-ray radiation. It has a well-resolved spectral response to the 22.4 keV Kα radiation peak and detector efficiency comparable to that of CdZnTe detector at 295 K.

  19. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  20. The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology

    Directory of Open Access Journals (Sweden)

    Ramelan Ari Handono

    2017-01-01

    Full Text Available Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540°C, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580°C and 600°C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580°C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology

  1. Effect of heat treatment on the temperature dependence of the fracture behavior of X-750 alloy

    Energy Technology Data Exchange (ETDEWEB)

    Marsh, C.; Depinoy, S. [University of South Carolina (United States); Kaoumi, D. [North Carolina State University (United States)

    2016-11-20

    X-750 is a nickel-chromium based super alloy of usefulness in a wide variety of applications such as gas turbines, rocket engines, nuclear reactors, pressure vessels, tooling, and aircraft structures. Its good mechanical properties are due to the strengthening from precipitation of γ′ particles upon prior ageing heat treatment. In this work, the effect of such heat treatment on the fracture mechanisms of X-750 was studied at various temperatures by comparing it with a non-aged, solution annealed X-750. Tensile tests were conducted from room temperatures up to 900 °C; fracture surfaces were analyzed by means of SEM observations. In addition, the microstructure of both aged and solution annealed materials were studied using SEM and TEM, both on as received and on tested specimens. In terms of mechanical properties, as expected, the yield strength and the ultimate tensile strength of the aged material were better than for the solution-annealed one, and only slightly decreased with increasing temperature when tested between room temperatures and 650 °C. In this range of temperature, the fracture surface of aged material evolves from purely intergranular to purely transgranular due to the thermal activation of dislocation mobility that relieves the stress at the grain boundaries, while the rupture of the solution annealed material is due to the coalescence of voids induced by decohesion at the MC carbides/matrix interface. At higher temperatures, precipitation of γ’ particles upon testing of the solution-annealed material leads to a temperature-dependent increase in both yield strength and ultimate tensile strength, which nevertheless remain below the aged material ones with the exception of the higher temperatures. At the same time, an overall decrease of the aged material mechanical properties is observed. Minimum ductility was observed at 750 °C for both solution annealed and aged specimen, due to the oxidation of grain boundaries leading to an

  2. Simultaneous Femtosecond X-ray Spectroscopy and Diffraction of Photosystem II at Room Temperature

    Science.gov (United States)

    Kern, Jan; Alonso-Mori, Roberto; Tran, Rosalie; Hattne, Johan; Gildea, Richard J.; Echols, Nathaniel; Glöckner, Carina; Hellmich, Julia; Laksmono, Hartawan; Sierra, Raymond G.; Lassalle-Kaiser, Benedikt; Koroidov, Sergey; Lampe, Alyssa; Han, Guangye; Gul, Sheraz; DiFiore, Dörte; Milathianaki, Despina; Fry, Alan R.; Miahnahri, Alan; Schafer, Donald W.; Messerschmidt, Marc; Seibert, M. Marvin; Koglin, Jason E.; Sokaras, Dimosthenis; Weng, Tsu-Chien; Sellberg, Jonas; Latimer, Matthew J.; Grosse-Kunstleve, Ralf W.; Zwart, Petrus H.; White, William E.; Glatzel, Pieter; Adams, Paul D.; Bogan, Michael J.; Williams, Garth J.; Boutet, Sébastien; Messinger, Johannes; Zouni, Athina; Sauter, Nicholas K.; Yachandra, Vittal K.; Bergmann, Uwe; Yano, Junko

    2013-01-01

    Intense femtosecond X-ray pulses produced at the Linac Coherent Light Source (LCLS) were used for simultaneous X-ray diffraction (XRD) and X-ray emission spectroscopy (XES) of microcrystals of Photosystem II (PS II) at room temperature. This method probes the overall protein structure and the electronic structure of the Mn4CaO5 cluster in the oxygen-evolving complex of PS II. XRD data are presented from both the dark state (S1) and the first illuminated state (S2) of PS II. Our simultaneous XRD/XES study shows that the PS II crystals are intact during our measurements at the LCLS, not only with respect to the structure of PS II, but also with regard to the electronic structure of the highly radiation sensitive Mn4CaO5 cluster, opening new directions for future dynamics studies. PMID:23413188

  3. Positron annihilation spectroscopy in defects of semiconductors

    CERN Document Server

    Fujinami, M

    2002-01-01

    Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 sup 1 sup 8 cm sup - sup 3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon and oxygen-implanted (180 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V sub 6 O sub 2 at 600degC and V sub 1 sub 0 O sub 6 at 800degC. (S.Y.)

  4. X-ray spectroscopic study of high-temperature plasmas by curved crystal spectrometer

    International Nuclear Information System (INIS)

    Morita, Shigeru.

    1983-07-01

    Extensive studies have been carried out on the structure of X-ray spectra from the highly stripped ions of first transition elements and their behavior in high temperature plasma, using a high resolution crystal spectrometer. Calculation was made on the design and the use of a curved crystal spectrometer for plasma diagnostics. A Johann type crystal spectrometer for measuring X-ray lines was constructed on the basis of the calculation. The characteristics of curved crystals of LiF, Ge and quartz used for the measurement of Kα lines from first transition elements were investigated. Vacuum sparks have been formed for producing high temperature plasma which emits X-ray lines from highly stripped ions. Two different structures of vacuum spark plasma were shown, that is, thermalized point plasma and extended plasma associated with non-thermal electrons. The X-ray lines from the extended plasma, those associated with the K shell from the point plasma and the Kα lines of Ti through Zn from the point plasma have been observed. (Kako, I.)

  5. MT71x: Multi-Temperature Library Based on ENDF/B-VII.1

    Energy Technology Data Exchange (ETDEWEB)

    Conlin, Jeremy Lloyd [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Parsons, Donald Kent [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Gray, Mark Girard [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Lee, Mary Beth [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); White, Morgan Curtis [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-12-16

    The Nuclear Data Team has released a multitemperature transport library, MT71x, based upon ENDF/B-VII.1 with a few modifications as well as additional evaluations for a total of 427 isotope tables. The library was processed using NJOY2012.39 into 23 temperatures. MT71x consists of two sub-libraries; MT71xMG for multigroup energy representation data and MT71xCE for continuous energy representation data. These sub-libraries are suitable for deterministic transport and Monte Carlo transport applications, respectively. The SZAs used are the same for the two sub-libraries; that is, the same SZA can be used for both libraries. This makes comparisons between the two libraries and between deterministic and Monte Carlo codes straightforward. Both the multigroup energy and continuous energy libraries were verified and validated with our checking codes checkmg and checkace (multigroup and continuous energy, respectively) Then an expanded suite of tests was used for additional verification and, finally, verified using an extensive suite of critical benchmark models. We feel that this library is suitable for all calculations and is particularly useful for calculations sensitive to temperature effects.

  6. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  7. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  8. High-Temperature Ferromagnetism in Cr- and Mn-Implanted Al(sub x)Ga(sub 1-x)N

    National Research Council Canada - National Science Library

    Ryu, Mee-Yi

    2007-01-01

    ... technique remains a challenging problem. Therefore, we have performed a systematic investigation of annealing temperature effects on magnetic, electrical, and optical properties of Cr-, Mn-, and Ni-implanted AlxGa1-xN to produce a good...

  9. Performance of room temperature mercuric iodide (HgI2) detectors in the ultra low energy x-ray region

    International Nuclear Information System (INIS)

    Dabrowski, A.J.; Iwanczyk, J.S.; Barton, J.B.; Huth, G.C.; Whited, R.; Ortale, C.; Economou, T.E.; Turkevich, A.L.

    1980-01-01

    Performance of room temperature mercuric iodide x-ray spectrometers has been recently improved through new fabrication techniques and further development of low noise associated electronic systems. This progress has extended the range of measurements to the ultra low energy x-ray region at room temperature. This paper reports the study of the effect of contact material on the performance of HgI 2 detectors in the low energy x-ray region

  10. Ultrafast supercontinuum fiber-laser based pump-probe scanning magneto-optical Kerr effect microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution.

    Science.gov (United States)

    Henn, T; Kiessling, T; Ossau, W; Molenkamp, L W; Biermann, K; Santos, P V

    2013-12-01

    We describe a two-color pump-probe scanning magneto-optical Kerr effect microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast "white light" supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.

  11. Soft X-ray and cathodoluminescence measurement, optimisation and analysis at liquid nitrogen temperatures

    Science.gov (United States)

    MacRae, C. M.; Wilson, N. C.; Torpy, A.; Delle Piane, C.

    2018-01-01

    Advances in field emission gun electron microprobes have led to significant gains in the beam power density and when analysis at high resolution is required then low voltages are often selected. The resulting beam power can lead to damage and this can be minimised by cooling the sample down to cryogenic temperatures allowing sub-micrometre imaging using a variety of spectrometers. Recent advances in soft X-ray emission spectrometers (SXES) offer a spectral tool to measure both chemistry and bonding and when combined with spectral cathodoluminescence the complementary techniques enable new knowledge to be gained from both mineral and materials. Magnesium and aluminium metals have been examined at both room and liquid nitrogen temperatures by SXES and the L-emission Fermi-edge has been observed to sharpen at the lower temperatures directly confirming thermal broadening of the X-ray spectra. Gains in emission intensity and resolution have been observed in cathodoluminescence for liquid nitrogen cooled quartz grains compared to ambient temperature quartz. This has enabled subtle growth features at quartz to quartz-cement boundaries to be imaged for the first time.

  12. Correlation between electronic and magnetic properties in the IV–VI group diluted magnetic semiconductor SnMnTe

    NARCIS (Netherlands)

    Eltink, S.J.E.A.; Swagten, H.J.M.; Stoffels, N.M.J.; Jonge, de W.J.M.

    1990-01-01

    The diluted magnetic semiconductor Sn1-xMnxTe exhibits a critical carrier density above which ferromagnetic interactions are dominant. On the basis of preliminary experiments on the low temperature magnetic phases no clear evidence for re-entrant behavior can be submitted.

  13. Calibration of a two-color soft x-ray diagnostic for electron temperature measurement

    Energy Technology Data Exchange (ETDEWEB)

    Reusch, L. M., E-mail: lmmcguire@wisc.edu; Den Hartog, D. J.; Goetz, J.; McGarry, M. B. [University of Wisconsin - Madison, Madison, Wisconsin 53703 (United States); Franz, P. [Consorzio RFX, Padova (Italy); Stephens, H. D. [University of Wisconsin - Madison, Madison, Wisconsin 53703 (United States); Pierce College Fort Steilacoom, Lakewood, Washington 98498 (United States)

    2016-11-15

    The two-color soft x-ray (SXR) tomography diagnostic on the Madison Symmetric Torus is capable of making electron temperature measurements via the double-filter technique; however, there has been a 15% systematic discrepancy between the SXR double-filter (SXR{sub DF}) temperature and Thomson scattering (TS) temperature. Here we discuss calibration of the Be filters used in the SXR{sub DF} measurement using empirical measurements of the transmission function versus energy at the BESSY II electron storage ring, electron microprobe analysis of filter contaminants, and measurement of the effective density. The calibration does not account for the TS and SXR{sub DF} discrepancy, and evidence from experiments indicates that this discrepancy is due to physics missing from the SXR{sub DF} analysis rather than instrumentation effects.

  14. Observation on Surface Change of Fragile Glass: Temperature - Time Dependence Studied by X-Ray Reflectivity

    International Nuclear Information System (INIS)

    Kikkawa, Hiroyuki; Kitahara, Amane; Takahashi, Isao

    2004-01-01

    The structural change of a fragile glass surface close to the glass transition temperature Tg is studied by using X-ray reflectivity. Measurements were performed on surfaces of maltitol, which is a typical polyalcohol fragile glass with Tg = 320K. Upon both heating and cooling, we find the following features which are also noticed in silicate glass surfaces: (i) On heating, the surface morphology indicates a variation at temperatures below Tg; (ii) A drastic increase in surface roughness occurs at a temperature about 333K on heating, which is 13K higher than Tg; (iii) During the cooling of the sample, formation of a low-density surface layer (3nm at 293K) is observed. Prior to the crystallization, nm - μm sized domains were grown at the surface, which might not be reported for other glasses

  15. Effects of salinity, P H and temperature on CMC polymer and X C polymer performance

    International Nuclear Information System (INIS)

    Ghassem Alaskari, M. K.; Nickdel Teymoori, Reza

    2007-01-01

    The rheological and filtration properties of drilling mud under down-hole conditions may be very different from those measured at ambient pressures and temperatures at the surface. This paper presents the results of an experimental investigation into the temperature and salinity and p H effects on drilling mud rheological and filtration properties. Results are given from tests on water base mud containing CMC polymer and X C polymer. Drilling fluid was investigated at three different temperatures (21.1 d eg C , 48.9 d eg C , 80 d eg C ) containing 8.165 kg/b bl bentonite. The drilling mud salinities in this study were fresh water (Ahwaz water: ppm: 400, Hardness: 120). 2000 ppm, 4000 ppm, 8000 ppm and 40000 ppm. It was found that p H of drilling mud should be kept at range of 8-10, because increasing p H of drilling mud will increase its rheological properties. The salinity and temperature effects show that as the salinity and temperature of drilling mud are increased the effectiveness of polymers in drilling mud will decreased. Moreover, they have a negative effect on filtration properties of drilling mud. In suspensions of sodium montmorillonite that are well dispersed and have low gel strength, both plastic viscosity and yield point decrease with increasing temperature

  16. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  17. Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

    Science.gov (United States)

    Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

    2010-02-01

    Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

  18. High count-rate study of two TES x-ray microcalorimeters with different transition temperatures

    Science.gov (United States)

    Lee, Sang-Jun; Adams, Joseph S.; Bandler, Simon R.; Betancourt-Martinez, Gabriele L.; Chervenak, James A.; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Porter, Frederick S.; Sadleir, John E.; Smith, Stephen J.; Wassell, Edward J.

    2017-10-01

    We have developed transition-edge sensor (TES) microcalorimeter arrays with high count-rate capability and high energy resolution to carry out x-ray imaging spectroscopy observations of various astronomical sources and the Sun. We have studied the dependence of the energy resolution and throughput (fraction of processed pulses) on the count rate for such microcalorimeters with two different transition temperatures (T c). Devices with both transition temperatures were fabricated within a single microcalorimeter array directly on top of a solid substrate where the thermal conductance of the microcalorimeter is dependent upon the thermal boundary resistance between the TES sensor and the dielectric substrate beneath. Because the thermal boundary resistance is highly temperature dependent, the two types of device with different T cs had very different thermal decay times, approximately one order of magnitude different. In our earlier report, we achieved energy resolutions of 1.6 and 2.3 eV at 6 keV from lower and higher T c devices, respectively, using a standard analysis method based on optimal filtering in the low flux limit. We have now measured the same devices at elevated x-ray fluxes ranging from 50 Hz to 1000 Hz per pixel. In the high flux limit, however, the standard optimal filtering scheme nearly breaks down because of x-ray pile-up. To achieve the highest possible energy resolution for a fixed throughput, we have developed an analysis scheme based on the so-called event grade method. Using the new analysis scheme, we achieved 5.0 eV FWHM with 96% throughput for 6 keV x-rays of 1025 Hz per pixel with the higher T c (faster) device, and 5.8 eV FWHM with 97% throughput with the lower T c (slower) device at 722 Hz.

  19. High temperature monitoring of silicon carbide ceramics by confocal energy dispersive X-ray fluorescence spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Li, Fangzuo; Liu, Zhiguo; Sun, Tianxi, E-mail: stx@bnu.edu.cn

    2016-04-15

    Highlights: • X-ray scattering was used for monitoring oxidation situation of SiC ceramics. • A calibration curve was obtained. • The confocal X-ray scattering technology was based on polycapillary X-ray optics. • The variations of contents of components of SiC ceramics were obtained. - Abstract: In the present work, we presented an alternative method for monitoring of the oxidation situation of silicon carbide (SiC) ceramics at various high temperatures in air by measuring the Compton-to-Rayleigh intensity ratios (I{sub Co}/I{sub Ra}) and effective atomic numbers (Z{sub eff}) of SiC ceramics with the confocal energy dispersive X-ray fluorescence (EDXRF) spectrometer. A calibration curve of the relationship between I{sub Co}/I{sub Ra} and Z{sub eff} was established by using a set of 8 SiC calibration samples. The sensitivity of this approach is so high that it can be easily distinguished samples of Z{sub eff} differing from each other by only 0.01. The linear relationship between the variation of Z{sub eff} and the variations of contents of C, Si and O of SiC ceramics were found, and the corresponding calculation model of the relationship between the ΔZ and the ΔC{sub C}, ΔC{sub Si}, and ΔC{sub O} were established. The variation of contents of components of the tested SiC ceramics after oxidation at high temperature was quantitatively calculated based on the model. It was shown that the results of contents of carbon, silicon and oxygen obtained by this method were in good agreement with the results obtained by XPS, giving values of relative deviation less than 1%. It was concluded that the practicality of this proposed method for monitoring of the oxidation situation of SiC ceramics at high temperatures was acceptable.

  20. Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Chen Bi-Juan; Deng Zheng; Wang Xian-Cheng; Feng Shao-Min; Yuan Zhen; Zhang Si-Jia; Liu Qing-Qing; Jin Chang-Qing

    2016-01-01

    The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized. Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor. (special topic)

  1. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  2. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  3. Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

    Science.gov (United States)

    Samedov, Victor V.

    2018-01-01

    Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

  4. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  5. Effect of temperature and phonons on the spectral properties of a multi-level semiconductor quantum dot single-photon source

    DEFF Research Database (Denmark)

    Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter

    2009-01-01

    Since it was realized that efficient quantum computing can be performed using single photons and standard linear optics elements, immense international research activity has been aimed at developing semiconductor quantum dot (QD) single-photon sources (SPS). In order to optimise the design of SPS...... us to study complicated multi-level QDs, not possible within the commonly used independent boson model (IBM)....

  6. Plenary lectures of the divisions semiconductor physics, thin films, dynamics and statistical physics, magnetism, metal physics, surface physics, low temperature physics

    International Nuclear Information System (INIS)

    Roessler, U.

    1992-01-01

    This volume contains a selection of plenary and invited lectures of the Solid State Division spring meeting of the DPG (Deutsche Physikalische Gesellschaft) 1992 in Regensburg. The constribution come mainly from five fields of the physics of condensed matter: doped fullerenes and high Tc superconductors, surfaces, time-resolved on nonlinear optics, polymer melts, and low-dimensional semiconductor systems. (orig.)

  7. Ultrasonic acoustic levitation for fast frame rate X-ray protein crystallography at room temperature

    Science.gov (United States)

    Tsujino, Soichiro; Tomizaki, Takashi

    2016-05-01

    Increasing the data acquisition rate of X-ray diffraction images for macromolecular crystals at room temperature at synchrotrons has the potential to significantly accelerate both structural analysis of biomolecules and structure-based drug developments. Using lysozyme model crystals, we demonstrated the rapid acquisition of X-ray diffraction datasets by combining a high frame rate pixel array detector with ultrasonic acoustic levitation of protein crystals in liquid droplets. The rapid spinning of the crystal within a levitating droplet ensured an efficient sampling of the reciprocal space. The datasets were processed with a program suite developed for serial femtosecond crystallography (SFX). The structure, which was solved by molecular replacement, was found to be identical to the structure obtained by the conventional oscillation method for up to a 1.8-Å resolution limit. In particular, the absence of protein crystal damage resulting from the acoustic levitation was carefully established. These results represent a key step towards a fully automated sample handling and measurement pipeline, which has promising prospects for a high acquisition rate and high sample efficiency for room temperature X-ray crystallography.

  8. Electric dipole (hyper)polarizabilities of selected X2Y2 and X3Y3 (X = Al, Ga, In and Y = P, As): III-V semiconductor clusters. An ab initio comparative study.

    Science.gov (United States)

    Karamanis, Panaghiotis; Pouchan, Claude; Leszczynski, Jerzy

    2008-12-25

    A systematic ab initio comparative study of the (hyper)polarizabilities of selected III-V stoichiometric semiconductor clusters has been carried out. Our investigation focuses on the ground state structures of the dimers and on two dissimilar trimer configurations of aluminum, gallium, indium phosphide and arsenide. The basis set effect on both the polarizabilities and hyperpolarizabilities of the studied systems has been explicitly taken into account relying on the augmented correlation consistent aug-cc-pVnZ (n = D, T, Q, and 5) basis sets series. In addition, a rough estimation of the effects of the relativistic effects on the investigated properties is provided by extension of the study to include calculations performed with relativistic electron core potentials (or pseudopotentials). Electron correlation effects have been estimated utilizing methods of increasing predictive reliability, e.g., the Møller-Plesset many body perturbation theory and the couple cluster approach. Our results reveal that in the considered semiconductor species the Group III elements (Al, Ga, In) play a vital role on the values of their relative (hyper)polarizability. At all levels of theory employed the most hyperpolarizable clusters are the indium derivatives while the aluminum arsenide clusters also exhibit high, comparable hyperpolarizabilities. The less hyperpolarizable species are those composed of gallium and this is associated with the strong influence of the nuclear charge on the valence electrons of Ga due to the poor shielding that is provided by the semicore d electrons. In addition, the analysis of the electronic structure and the hyperpolarizability magnitudes reveals that clusters, in which their bonding is characterized by strong electron transfer from the electropositive to the electronegative atoms, are less hyperpolarizable than species in which the corresponding electron transfer is weaker. Lastly, from the methodological point of view our results point out that

  9. Injection of spin-polarized current into semiconductor

    International Nuclear Information System (INIS)

    Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

    2003-01-01

    A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

  10. Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1-xGex) 2

    Science.gov (United States)

    Ichiki, Katsuya; Mimura, Kojiro; Anzai, Hiroaki; Uozumi, Takayuki; Sato, Hitoshi; Utsumi, Yuki; Ueda, Shigenori; Mitsuda, Akihiro; Wada, Hirofumi; Taguchi, Yukihiro; Shimada, Kenya; Namatame, Hirofumi; Taniguchi, Masaki

    2017-07-01

    We investigated the bulk-derived electronic structure of the temperature-induced valence transition system EuNi2(Si1 -xGex )2 (x =0.70 , 0.79, and 0.82) by means of hard x-ray photoemission spectroscopy (HAXPES). The HAXPES spectra clearly show distinct temperature dependencies in the spectral intensities of the Eu2 + and Eu3 +3 d components. For x =0.70 , the changes in the Eu2 + and Eu3 +3 d spectral components with temperature reflect a continuous valence transition, whereas the sudden changes for x =0.79 and 0.82 reflect first-order valence transitions. The Eu 3 d spectral shapes for all x and particularly the drastic changes in the Eu3 +3 d feature with temperature are validated by a theoretical calculation based on the single-impurity Anderson model (SIAM). SIAM analysis reveals that the valence transition for each x is controlled by the c -f hybridization strength and the charge-transfer energy. Furthermore, the c -f hybridization strength governs the valence transition of this system, which is either first order or continuous, consistent with Kondo volume collapse.

  11. Positron annihilation studies in the high-temperature superconductors YBa2Cu3Osub(7-x) and HoBa2Cu3Osub(7-x)

    International Nuclear Information System (INIS)

    Mandal, P.; Poddar, A.; Nambissan, P.M.G.; Choudhury, P.; Ghosh, B.; Sen, P.; Majumdar, C.K.

    1988-01-01

    In the high-Tsub(c) superconductors YBa 2 Cu 3 Osub(7-x) and HoBa 2 Cu 3 Osub(7-x) the Doppler-broadened positron annihilation lineshape parameter is studied as a function of temperature. Anomalies are detected around the transition temperature found by resistance measurements, giving indirect support for an electronic mechanism for superconductivity. The positron lifetimes in these compounds are measured at room temperature and are found to be similar. The origins of the several lifetimes found and their intensities are discussed. (author)

  12. Magnetic properties of Mn3-xFexSn compounds with tuneable Curie temperature by Fe content for thermomagnetic motors

    Science.gov (United States)

    Felez, Marissol R.; Coelho, Adelino A.; Gama, Sergio

    2017-12-01

    Mn3-xFexSn system (0.00 ≤ x ≤ 3.00 with Δx = 0.25) alloys present the Curie temperature (TC) or transition temperature (TT) tuneable by the Fe content. A piece-wise linear profile for TC,T as a function of x is observed in a two wide temperature ranges, between 155 K up to 759 K and 259 K up to 155 K. Their equations are TC,T = (59 ± 15) + (240 ± 7)·x and TC,T = (257 ± 1) - (206 ± 4)·x, respectively. The alloys are low cost and easy manufacturing, rare earth free, with second order magnetic transition (SOMT), and have good magnetic properties. These features suggest an immediate application of the material in cascade thermomagnetic motors that operate with a large temperature range between hot and cold sources. Furthermore, SOMT Mn-Fe-Sn system materials are also reported with advantages that could make alloys of the Mn3-xFexSn system, (0.88 ≤ x ≤ 1.20), promising candidate for magnetic refrigeration. The typical ferromagnetic behaviour is achieved only by samples with x ≥ 1. The samples with x between 0.00 and 0.75 do not show the saturation magnetization even using fields up to 13 T.

  13. X-ray absorption spectroscopy on high-temperature superconductors and related compounds

    International Nuclear Information System (INIS)

    Pellegrin, E.J.H.A.

    1995-07-01

    The electronic structure of the cuprate high-temperature superconductors La 2-x Sr x CuO 4+δ , Tl 2 Ba 2 CaCu 2 O 8 and Tl 2 Ba 2 Ca 2 Cu 3 O 10 has been investigated using polarization-dependent near-edge X-ray absorption fine structure spectroscopy (NEXAFS). In addition, La 2-x Sr x NiO 4+δ has been included in the actual study as an isostructural analogue to the La 2-x Sr x CuO 4+δ system. It appears that the electronic structure of these compounds corresponds to that of a p-type doped charge-transfer insulator including electron-electron interactions on the Cu(Ni) sites and a strong hybridization between Cu(Ni) and O atoms. It is concluded that the low-energy excitations in these compounds can be described on the basis of an effective one-band Mott-Hubbard model. The polarization-dependence of the above spectra gives evidence for the strong in-plane character of the intrinsic and the doped holes. The small amount and the doping-dependence of the out-of-plane character of these charge carriers rule out models for a microscopic mechanism of superconductivity based on a large amount of hole states in the corresponding Apex-O2p z /Cu3d 3z 2 -r 2 orbitals. On the other hand, the reduction of this anisotropy in the overdoped compounds together with similar findings in the macroscopic properties seems to indicate a detrimental influence of non-planar orbitals on the superconducting properties. The differences in the energetic ordering and atomic character of the states close to the Fermi level between the undoped compounds La 2 CuO 4+δ , La 2 NiO 4+δ , and NiO have been determined from the NEXAFS data. It is found that these differences can be explained by the different size of the tetragonal crystal field splitting E Z compared to that of the Hund's rule interaction J H in these systems. This gives evidence for the high-spin d 8 ground state of the undoped nickelates (i.e. J H >E Z ). It is suggested that the polarons in La 2-x Sr x NiO 4+δ can be seen as non

  14. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  15. II-VI Narrow-Bandgap Semiconductors for Optoelectronics

    Science.gov (United States)

    Baker, Ian

    The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1-x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1-x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II-VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1-x Mn x Te and Hg1-x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

  16. Soft-X ray electronics for temperature measurement in SST-1 tokamak

    International Nuclear Information System (INIS)

    Kumari, Praveena; Raval, Jayesh V.; Chauhan, Harsad; Hansalia, C.J.; Joisa, Y.S.; Rajpal, Rachana

    2015-01-01

    Soft-X ray diagnostic is used for the measurement of core temperature of plasma in tokamak. Signal conditioning electronics is designed, developed and tested for Soft-X ray measurement in SST-1. Silicon Surface Barrier Detectors (SBD) are used for detection of Soft -X ray. The detector is very sensitive and have a large leakage current (1-10) nA/cm"2. The preamplifier is designed to measure (10-100) nA of current signal. Virtual bias is supplied to detector through preamplifier. The front end electronics are mounted directly on the feed through in air side. Detectors are interfaced with feed through by 2-wire shielded cable. In the way of getting good results, problems are identified and troubleshooted. Soft-X ray signals are observed consistently in SST-1 campaign XIII. Different scheme were tested during the plasma experimental shots to get better measurement. This poster will describe the design details, interfacing with detector, problem faced, remedy and results. (author)

  17. X-ray spectroscopic diagnostics of high-temperature dense plasmas created in different gaseous media

    International Nuclear Information System (INIS)

    Skobelev, I.Y.; Dyakin, V.M.; Faenov, A.Y.

    1997-01-01

    The investigations of emission x-ray spectra of multicharged ions of some chemical elements (S, F, Ar, Fr, O) have been carried out. These atoms are contained in gases and consequently can be used as diagnostic elements in a dense plasma focus experiments. The investigations were done in the dense high-temperature plasma (N e ∼ 10 21 cm -3 , T e ∼ 500 eV) created by laser heating of high-pressure gas puff targets, and X-ray spectrographs with a spherically bent mica crystals were used for spectra observations. Some new spectroscopic results (line identifications, high-precision wavelength measurements) have been obtained and have been applied to determine a spatial distribution of plasma parameters. It is shown that spectroscopic techniques used is a very suitable tool for studies of a plasma with complicated spatial structure

  18. Solvent vapor annealing of an insoluble molecular semiconductor

    KAUST Repository

    Amassian, Aram

    2010-01-01

    Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.

  19. Evaluation of pore structures and cracking in cement paste exposed to elevated temperatures by X-ray computed tomography

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kwang Yeom, E-mail: kimky@kict.re.kr [Korea Institute of Construction Technology, 283 Goyangdae-ro, Ilsanseo-gu, Goyang 411-712 (Korea, Republic of); Yun, Tae Sup, E-mail: taesup@yonsei.ac.kr [School of Civil and Environmental Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Park, Kwang Pil, E-mail: bamtol97@kict.re.kr [Korea Institute of Construction Technology, 283 Goyangdae-ro, Ilsanseo-gu, Goyang 411-712 (Korea, Republic of)

    2013-08-15

    When cement-based materials are exposed to the high temperatures induced by fire, which can rapidly cause temperatures of over 1000 °C, the changes in pore structure and density prevail. In the present study, mortar specimens were subjected to a series of increasing temperatures to explore the temperature-dependent evolution of internal pore structure. High-performance X-ray computed tomography (CT) was used to observe the evolution of temperature-induced discontinuities at the sub-millimeter level. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to investigate the cause of physical changes in the heated mortar specimens. Results exhibit the changes in pore structure caused by elevated temperatures, and thermally induced fractures. We discuss the progressive formation of thermally induced fracture networks, which is a prerequisite for spalling failure of cement-based materials by fire, based on visual observations of the 3D internal structures revealed by X-ray CT.

  20. Evaluation of pore structures and cracking in cement paste exposed to elevated temperatures by X-ray computed tomography

    International Nuclear Information System (INIS)

    Kim, Kwang Yeom; Yun, Tae Sup; Park, Kwang Pil

    2013-01-01

    When cement-based materials are exposed to the high temperatures induced by fire, which can rapidly cause temperatures of over 1000 °C, the changes in pore structure and density prevail. In the present study, mortar specimens were subjected to a series of increasing temperatures to explore the temperature-dependent evolution of internal pore structure. High-performance X-ray computed tomography (CT) was used to observe the evolution of temperature-induced discontinuities at the sub-millimeter level. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to investigate the cause of physical changes in the heated mortar specimens. Results exhibit the changes in pore structure caused by elevated temperatures, and thermally induced fractures. We discuss the progressive formation of thermally induced fracture networks, which is a prerequisite for spalling failure of cement-based materials by fire, based on visual observations of the 3D internal structures revealed by X-ray CT

  1. Measurement of core plasma temperature and rotation on W7-X made available by the x-ray imaging crystal spectrometer (XICS)

    Energy Technology Data Exchange (ETDEWEB)

    Pablant, N A; Bitter, M; Burhenn, R; Delgado-Aparicio, L; Ellis, R; Gates, D; Goto, M; Hill, K W; Langenberg, A; Lazerson, S; Mardenfeld, M; Morita, S; Neilson, G H; Oishi, T; Pedersen, T S

    2014-07-01

    A new x-ray imaging crystal spectrometer diagnostic (XICS) is currently being built for installation on W7-X. This diagnostic will contribute to the study of ion and electron thermal transport and the evolution of the radial electric field by providing high resolution temperature and rotation measurements under many plasma conditions, including ECH heated plasmas. Installation is expected before the first experimental campaign (OP1.1), making an important set of measurements available for the first W7-X plasmas. This diagnostic will also work in concert with the HR-XCS diagnostic to provide an excellent diagnostic set for core impurity transport on W7-X.

  2. Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu{sub x}O and HfO{sub 2}/SiO{sub 2} high-{kappa} stack gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Zou Xiao [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Department of Electromachine Engineering, Jianghan University, Wuhan, 430056 (China); Fang Guojia, E-mail: gjfang@whu.edu.c [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Yuan Longyan; Liu Nishuang; Long Hao; Zhao Xingzhong [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China)

    2010-05-31

    Polycrystalline p-type Cu{sub x}O films were deposited after the growth of HfO{sub 2} dielectric on Si substrate by pulsed laser deposition, and Cu{sub x}O metal-oxide-semiconductor (MOS) capacitors with HfO{sub 2}/SiO{sub 2} stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline structure and Cu{sup +}/Cu{sup 2+} ratios of Cu{sub x}O films respectively. SiO{sub 2} interlayer formed between the high-{kappa} dielectric and substrate was estimated by the transmission electron microscope. Results of electrical characteristic measurement indicate that the permittivity of HfO{sub 2} is about 22, and the gate leakage current density of MOS capacitor with 11.3 nm HfO{sub 2}/SiO{sub 2} stack dielectrics is {approx} 10{sup -4} A/cm{sup 2}. Results also show that the annealing in N{sub 2} can improve the quality of Cu{sub x}O/HfO{sub 2} interface and thus reduce the gate leakage density.

  3. Theoretical optoelectronic analysis of intermediate-band photovoltaic material based on ZnY1−xOx (Y = S, Se, Te) semiconductors by first-principles calculations

    International Nuclear Information System (INIS)

    Wu Kong-Ping; Zhou Meng-Ran; Huang You-Rui; Gu Shu-Lin; Ye Jian-Dong; Zhu Shun-Ming; Zhang Rong; Zheng You-Dou; Tang Kun

    2013-01-01

    The structural, energetic, and electronic properties of lattice highly mismatched ZnY 1−x O x (Y = S, Se, Te) ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY (Y = S, Se, Te) at octahedral sites in a semiconductor by the calculations of density of states (DOS), leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands (IBs) in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Characterization of polymorphic solid-state changes using variable temperature X-ray powder diffraction

    DEFF Research Database (Denmark)

    Karjalainen, Milja; Airaksinen, Sari; Rantanen, Jukka

    2005-01-01

    The aim of this study was to use variable temperature X-ray powder diffraction (VT-XRPD) to understand the solid-state changes in the pharmaceutical materials during heating. The model compounds studied were sulfathiazole, theophylline and nitrofurantoin. This study showed that the polymorph form...... of sulfathiazole SUTHAZ01 was very stable and SUTHAZ02 changed as a function of temperature to SUTHAZ01. Theophylline monohydrate changed via its metastable form to its anhydrous form during heating and nitrofurantoin monohydrate changed via amorphous form to its anhydrous form during heating. The crystallinity...... to the anhydrous form. The average crystallite size of sulfathiazole samples varied only a little during heating. The average crystallite size of both theophylline and nitrofurantoin monohydrate decreased during heating. However, the average crystallite size of nitrofurantoin monohydrate returned back to starting...

  5. Effect of grain size and cold working on high temperature strength of Hastelloy X

    International Nuclear Information System (INIS)

    Fujioka, J.; Murase, H.; Matsuda, S.

    1980-01-01

    Effect of grain size and cold working on creep, creep rupture, low cycle fatigue and tensile strengths of Hastelloy X were studied at temperatures ranging from 800 to 1000 0 C. In order to apply these data to design, the allowable design stresses were estimated by expanding the criteria of ASME Code Case 1592 to such a high temperature range. The allowable design stress increased, on the other hand, the low cycle fatigue life decreased with increasing grain size. Cold working up to a ratio of 5 per cent may not be a serious problem in design, because the allowable design stress and the fatigue life were little affected. The cause of these variations in strength was discussed by examining the initiation and growth of cracks, and the microstructures. (author)

  6. Ab initio study of the magnetic ordering in the semiconductors Mn{sub x}Ti{sub 1-x}O{sub 2}, Co{sub x}Ti{sub 1-x}O{sub 2} and Fe{sub x}Ti{sub 1-x}O{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Errico, L.A. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900, La Plata (Argentina)]. E-mail: errico@fisica.unlp.edu.ar; Weissmann, M. [Departamento de Fisica, Comision Nacional de Energia Atomica, Avda. del Libertador 8250, 1429 Buenos Aires (Argentina); Renteria, M. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900, La Plata (Argentina)

    2004-12-31

    In this work we present a set of density-functional-theory calculations in the systems Mn{sub x}Ti{sub 1-x}O{sub 2}, Fe{sub x}Ti{sub 1-x}O{sub 2}, and Co{sub x}Ti{sub 1-x}O{sub 2}. The calculations were performed with the full-potential linearized augmented plane wave method, assuming that the magnetic impurities substitutionally replace the Ti ions and considering different distributions of them in the host lattice. Our results show that the system Co{sub x}Ti{sub 1-x}O{sub 2} is ferromagnetic, while Mn{sub x}Ti{sub 1-x}O{sub 2} is antiferromagnetic. In both cases, this is independent of the distribution of the impurities in the TiO{sub 2} lattice. First results obtained in the system Fe{sub x}Ti{sub 1-x}O{sub 2} are also presented.

  7. Thermodynamic properties and low-temperature X-ray diffraction of vitamin B{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Knyazev, A.V., E-mail: knyazevav@gmail.com; Smirnova, N.N.; Shipilova, A.S.; Shushunov, A.N.; Gusarova, E.V; Knyazeva, S.S.

    2015-03-20

    Highlights: • Temperature dependence of heat capacity of vitamin B{sub 3} has been measured by precision adiabatic vacuum calorimetry. • The thermodynamic functions of the vitamin B{sub 3} have been determined for the range from T → 0 to 346 K. • The thermodynamic analysis of reactions involving nicotinic acid was made. • The low-temperature X-ray diffraction was used for the determination of coefficients of thermal expansion. - Abstract: In the present work temperature dependence of heat capacity of vitamin B{sub 3} (nicotinic acid) has been measured for the first time in the range from 5 to 346 K by precision adiabatic vacuum calorimetry. Based on the experimental data, the thermodynamic functions of the vitamin B{sub 3}, namely, the heat capacity, enthalpy H°(T) – H°(0), entropy S°(T) – S°(0) and Gibbs function G°(T) – H°(0) have been determined for the range from T → 0 to 343 K. The value of the fractal dimension D in the function of multifractal generalization of Debye’s theory of the heat capacity of solids was estimated and the character of heterodynamics of structure was detected. The thermodynamic parameters Δ{sub f}S°, Δ{sub f}G° at T = 298.15 K and p = 0.1 MPa have been calculated. The thermodynamic analysis of reactions involving nicotinic acid was made. The low-temperature X-ray diffraction was used for the determination of coefficients of thermal expansion.

  8. Tailored temperature window of CuO{sub x}/WO{sub x}–ZrO{sub 2} for NO{sub x} reduction via adjusting the calcination temperature of WO{sub x}–ZrO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Si, Zhichun, E-mail: si.zhichun@sz.tsinghua.edu.cn [Advanced Materials Institute, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Wu, Xiaodong [State Key Laboratory of New Ceramics and Fine Process, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Yangtze Delta Region Institute of Tsinghua University, Zhejiang 314000 (China); Weng, Duan, E-mail: duanweng@tsinghua.edu.cn [State Key Laboratory of New Ceramics and Fine Process, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Ma, Ziran; Ma, Jing [State Key Laboratory of New Ceramics and Fine Process, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2013-02-15

    WO{sub x}–ZrO{sub 2} support was calcined at various temperatures for obtaining controllable activity of copper catalysts for NO{sub x} reduction by ammonia. The temperature window of copper catalyst for over 80% NO{sub x} conversion shifts from 180–300 to 230–350 °C by elevating the calcination temperature of WO{sub x}–ZrO{sub 2} support from 500 to 600 °C, due to the increased Brønsted acidity and reduced structure and electronic interactions between copper oxides and tungsten oxides arising from the polymerization of WO{sub x} clusters on surface of support. Calcining WO{sub x}–ZrO{sub 2} support at 700 °C leads to the reduced redox property of copper oxides on the Cu–O–W interface and the formation of bulk-like CuO, results in a low activity of catalyst. - Graphical abstract: The temperature window of catalyst for over 80% NO{sub x} conversion shifts from 180-300 °C to 230–350 °C by elevating the calcination temperature of WO{sub x}–ZrO{sub 2} support from 500 °C to 600 °C. Highlights: ► The temperature window of catalyst is tailored by calcining the support. ► The mechanisms of tailoring the temperature window of catalyst are discussed. ► The polymerization of WO{sub x} leads to the increased Brønsted acidity of catalysts. ► The CuO{sub x}/WO{sub x} interactions are reduced by elevating calcination temperature of support.

  9. High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide

    Science.gov (United States)

    Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

    1992-05-01

    High resolution x-ray diffraction methods have been used to characterize GaAs grown at low substrate temperatures by molecular beam epitaxy and to examine the effects of post-growth annealing on the structure of the layers. Double crystal rocking curves from the as-deposited epitaxial layer show well-defined interference fringes, indicating a high level of structural perfection despite the presence of excess arsenic. Annealing at temperatures from 700 to 900 °C resulted in a decrease in the perpendicular lattice mismatch between the GaAs grown at low temperature and the substrate from 0.133% to 0.016% and a decrease (but not total elimination) of the visibility of the interference fringes. Triple-crystal diffraction scans around the 004 point in reciprocal space exhibited an increase in the apparent mosaic spread of the epitaxial layer with increasing anneal temperature. The observations are explained in terms of the growth of arsenic precipitates in the epitaxial layer.

  10. High Pressure Low Temperature X-Ray Diffraction Studies of UO2 and UN single crystals.

    Science.gov (United States)

    Antonio, Daniel; Mast, Daniel; Lavina, Barbara; Gofryk, Krzysztof

    Uranium dioxide is the most commonly used nuclear fuel material in commercial reactors, while uranium nitride also has many thermal and physical properties that make it attractive for potential use in reactors. Both have a cubic fcc lattice structure at ambient conditions and transition to antiferromagnetic order at low temperature. UO2 is a Mott insulator that orders in a complex non-collinear 3k magnetic structure at about 30 K, while UN has appreciable conductivity and orders in a simpler 1k magnetic structure below 52 K. Both compounds are characterized by strong magneto-structural interactions, understanding of which is vital for modeling their thermo-physical properties. While UO2 and UN have been extensively studied at and above room temperature, little work has been done to directly study the structure of these materials at low temperatures where magnetic interactions are dominant. In the course of our systematic studies on magneto vibrational behavior of UO2 and UN, here we present our recent results of high pressure X-Ray Diffraction (up to 35 GPa) measured below the Neel temperature using synchrotron radiation. Work supported by the Department of Energy, Office of Basic Energy Sciences, Materials Sciences, and Engineering Division.

  11. Au/iron oxide catalysts: temperature programmed reduction and X-ray diffraction characterization

    International Nuclear Information System (INIS)

    Neri, G.; Visco, A.M.; Galvagno, S.; Donato, A.; Panzalorto, M.

    1999-01-01

    Gold on iron oxides catalysts have been characterized by temperature programmed reduction (TPR) and X-ray diffraction spectroscopy (XRD). The influence of preparation method, gold loading and pretreatment conditions on the reducibility of iron oxides have been investigated. On the impregnated Au/iron oxide catalysts as well as on the support alone the partial reduction of Fe(III) oxy(hydroxides) to Fe 3 O 4 starts in the 550 and 700 K temperature range. On the coprecipitated samples, the temperature of formation of Fe 3 O 4 is strongly dependent on the presence of gold. The reduction temperature is lowered as the gold loading is increased. The reduction of Fe 3 O 4 to FeO occurs at about 900 K and is not dependent on the presence of gold and the preparation method. It is suggested that the effect of gold on the reducibility of the iron oxides is related to an increase of the structural defects and/or of the surface hydroxyl groups. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

  12. Numerical evaluation of multipass welding temperature field in API 5L X80 steel welded joints

    Directory of Open Access Journals (Sweden)

    J Nóbrega

    2016-10-01

    Full Text Available Many are the metallurgical changes suffered by materials when subjected to welding thermal cycle, promoting a considerable influence on the welded structures thermo mechanical properties. In project phase, one alternative for evaluating the welding cycle variable, would be the employment of computational methods through simulation. So, this paper presents an evaluation of the temperature field in a multipass welding of API 5L X80 steel used for oil and gas transportation, using the ABAQUS ® software, based on Finite Elements Method (FEM. During the simulation complex phenomena are considerable including: Variation in physical and mechanical properties of materials as a function of temperature, welding speed and the different mechanisms of heat exchange with the environment (convection and radiation were used. These considerations allow a more robust mathematical modeling for the welding process. An analytical heat source proposed by Goldak, to model the heat input in order to characterize the multipass welding through the GTAW (Gas Tungsten Arc Welding process on root and the SMAW (Shielded Metal Arc Welding process for the filling passes were used. So, it was possible to evaluate the effect of each welding pass on the welded joint temperature field, through the temperature peaks and cooling rates values during the welding process.

  13. Flux-mediated syntheses, structural characterization and low-temperature polymorphism of the p-type semiconductor Cu2Ta4O11

    Science.gov (United States)

    King, Nacole; Sullivan, Ian; Watkins-Curry, Pilanda; Chan, Julia Y.; Maggard, Paul A.

    2016-04-01

    A new low-temperature polymorph of the copper(I)-tantalate, α-Cu2Ta4O11, has been synthesized in a molten CuCl-flux reaction at 665 °C for 1 h and characterized by powder X-ray diffraction Rietveld refinements (space group Cc (#9), a=10.734(1) Å, b = 6.2506(3) Å, c=12.887(1) Å, β = 106.070(4)°). The α-Cu2Ta4O11 phase is a lower-symmetry monoclinic polymorph of the rhombohedral Cu2Ta4O11 structure (i.e., β-Cu2Ta4O11 space group R 3 ̅ c (#167), a = 6.2190(2) Å, c=37.107(1) Å), and related crystallographically by ahex=amono/√3, bhex=bmono, and chex=3cmonosinβmono. Its structure is similar to the rhombohedral β-Cu2Ta4O11 and is composed of single layers of highly-distorted and edge-shared TaO7 and TaO6 polyhedra alternating with layers of nearly linearly-coordinated Cu(I) cations and isolated TaO6 octahedra. Temperature dependent powder X-ray diffraction data show the α-Cu2Ta4O11 phase is relatively stable under vacuum at 223 K and 298 K, but reversibly transforms to β-Cu2Ta4O11 by at least 523 K and higher temperatures. The symmetry-lowering distortions from β-Cu2Ta4O11 to α-Cu2Ta4O11 arise from the out-of-center displacements of the Ta 5d0 cations in the TaO7 pentagonal bipyramids. The UV-vis diffuse reflectance spectrum of the monoclinic α-Cu2Ta4O11 shows an indirect bandgap transition of ∼2.6 eV, with the higher-energy direct transitions starting at ∼2.7 eV. Photoelectrochemical measurements on polycrystalline films of α-Cu2Ta4O11 show strong cathodic photocurrents of ∼1.5 mA/cm2 under AM 1.5 G solar irradiation.

  14. Cast Aluminum Alloys for High Temperature Applications Using Nanoparticles Al2O3 and Al3-X Compounds (X = Ti, V, Zr)

    Science.gov (United States)

    Lee, Jonathan A.

    2009-01-01

    In this paper, the effect of nanoparticles Al2O3 and Al3-X compounds (X = Ti, V, Zr) on the improvement of mechanical properties of aluminum alloys for elevated temperature applications is presented. These nanoparticles were selected based on their low cost, chemical stability and low diffusions rates in aluminum at high temperatures. The strengthening mechanism at high temperature for aluminum alloy is based on the mechanical blocking of dislocation movements by these nanoparticles. For Al2O3 nanoparticles, the test samples were prepared from special Al2O3 preforms, which were produced using ceramic injection molding process and then pressure infiltrated by molten aluminum. In another method, Al2O3 nanoparticles can also be homogeneously mixed with fine aluminum powder and consolidated into test samples through hot pressing and sintering. With the Al3-X nanoparticles, the test samples are produced as precipitates from in-situ reactions with molten aluminum using conventional permanent mold or die casting techniques. It is found that cast aluminum alloy using nanoparticles Al3-X is the most cost effective method to produce high strength aluminum alloys for high temperature applications in comparison to nanoparticles Al2O3. Furthermore, significant mechanical properties retention in high temperature environment could be achieved with Al3-X nanoparticles, resulting in tensile strength of nearly 3 times higher than most 300- series conventional cast aluminum alloys tested at 600 F.

  15. Josephson oscillations and noise temperatures in YBa2Cu3O7-x grain-boundary junctions

    DEFF Research Database (Denmark)

    Yu, Ya. Divin; Mygind, Jesper; Pedersen, Niels Falsig

    1992-01-01

    The ac Josephson effect was studied in YBa2Cu3O7−x grain-boundary junctions (GBJ) in the temperature range from 4 to 90 K. The temperature dependence of the linewidth of millimeter-wave Josephson oscillations was measured and it is shown that the derived effective noise temperatures may be as low...... as the physical temperature in the temperature range investigated. In the millimeter-wave range, linewidths as low as 380 MHz were found at liquid-nitrogen temperatures. Applied Physics Letters is copyrighted by The American Institute of Physics....

  16. Temperature and magnetic field dependence of the coexistent phases in La sub 1 sub - sub x Ca sub x MnO sub 3 sub + subdelta (x=0.47, 0.49)

    CERN Document Server

    Watanabe, Y; Awaji, S; Watanabe, K; Fujishiro, H; Ikebe, M

    2003-01-01

    X-ray diffraction measurements under high and low temperature, and magnetic field have been performed for the doped La sub 1 sub - sub x Ca sub x MnO sub 3 sub + subdelta polycrystals to clarify the coexistent phases and their structures around the composition of x - 0.5. By measurements at high temperature, the transition from a Pnma to an Imma space group symmetry phase has been firstly observed in this system at the temperature between 500degC and 600degC. At low temperature, the importance of the measurement of (131) reflection is noticed and the phase fraction of two similar Pnma phases with ferromagnetic and anti-ferromagnetic states is determined. It is found that the application of the magnetic field by 5 T and the slight change of the composition x by 0.02 remarkably affect this phase fraction. (author)

  17. Platform development of x-ray absorption-based temperature measurements above 100-eV on the OMEGA laser

    Science.gov (United States)

    Workman, Jonathan; Keiter, P.; Tierney, T.; Tierney, H.; Belle, K.; Magelssen, G.; Peterson, R.; Fryer, C.; Comley, A.; Taylor, M.

    2007-11-01

    Experiments were performed on the OMEGA laser system at the University of Rochester to measure radiation temperature in hohlraum-heated foams. Using x-ray absorption spectroscopy in the 3-6-keV x-ray range allows temperature determination in the range of 50-200-eV. Uranium, bismuth and gold M-shell x-ray emission were used as broadband backlighters. Backlighter absorption through heated chlorinated foam and scandium tracers were used to determine temperatures. The development of this technique in the temperature range of 100-200-eV will be used for platform development of future NIF experiments. We will present time-integrated and time-resolved measurements of x-ray emission from the backlighter materials as well as absorption measurements trough the heated tracer materials. We will also present future directions in the development of this platform.

  18. Temperature- and pressure-induced lattice distortion in CdCr2-xGaxSe4 (x = 0, 0.06, and 0.12)

    DEFF Research Database (Denmark)

    Waskowska, A.; Gerward, Leif; Olsen, J.S.

    2002-01-01

    Structural changes in the cubic spinels CdCr2-xGaxSe4 have been studied by means of single-crystal x-ray diffraction at low temperature and energy-dispersive diffraction in a diamond-anvil cell at high pressure. In stoichiometric samples (x = 0), a spontaneous magnetostriction reduces the thermal...... expansion coefficient from 6.7 x 10(-6) K-1 in the paramagnetic phase to 2.2 x 10(-6) K-1 in the ferromagnetic phase (T-C = 130 K). In the samples with Ga3+ admixtures (x = 0.06 and 0.12), a slight structural distortion causes an order-disorder-type phase transition at T-d approximate to 285 K connected...

  19. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  20. Microwave absorption properties of flake-shaped Co particles composites at elevated temperature (293-673 K) in X band

    Science.gov (United States)

    Wang, Guowu; Li, Xiling; Wang, Peng; Zhang, Junming; Wang, Dian; Qiao, Liang; Wang, Tao; Li, Fashen

    2018-06-01

    The complex permeability and permittivity of the easy-plane anisotropic Co/polyimide composite at high temperature (293-673 K) in X band were measured. The results show that both the complex permeability and permittivity increase with the increase of temperature in the measured temperature range. The calculated absorption properties display that the intensity of the reflection loss (RL) peak first increases and then decreases with the increase of temperature, and reaches the maximum (-52 dB) at 523 K. At each temperature, the composite can achieve the RL exceeding -10 dB in the whole X band. The composite can even work stably for more than 20 min with the excellent absorption performance under 673 K. In addition, the RL performance of the composite at high temperature is better than that at room temperature.