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Sample records for temperature ion nitriding

  1. Influence of the ion nitriding temperature in the wear resistance of AISI H13 tool steel

    International Nuclear Information System (INIS)

    Heck, Stenio Cristaldo; Fernandes, Frederico Augusto Pires; Pereira, Ricardo Gomes; Casteletti, Luiz Carlos; Totten, George Edward

    2010-01-01

    The AISI H13 tool steel for hot work is the most used in its category. This steel was developed for injection molds and extrusion of hot metals as well as for conformation in hot presses and hammers. Plasma nitriding can improve significantly the surface properties of these steels, but the treatments conditions, such as temperature, must be optimized. In this work the influence of nitriding treatment temperature on the wear behavior of this steel is investigated. Samples of AISI H13 steel were quenched and tempered and then ion nitrided in the temperatures of 450, 550 and 650 deg C, at 4mbar pressure, during 5 hours. Samples of the treated material were characterized by optical microscopy, Vickers microhardness, x-ray analysis and wear tests. Plasma nitriding formed hard diffusion zones in all the treated samples. White layers were formed in samples treated at 550 deg C and 650 deg C. The treatment temperature of 450 deg C produced the highest hardness. Treatment temperature showed great influence in the diffusion layer thickness. X-ray analysis indicated the formation of the Fe_3N, Fe_4N and CrN phases for all temperatures, but with different concentrations. Nitriding increased significantly the AISI H13 wear resistance. (author)

  2. High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Finzel, A.; Gerlach, J.W., E-mail: juergen.gerlach@iom-leipzig.de; Lorbeer, J.; Frost, F.; Rauschenbach, B.

    2014-10-30

    Highlights: • Irradiation of gallium nitride films with hyperthermal nitrogen ions. • Surface roughening at elevated sample temperatures was observed. • No thermal decomposition of gallium nitride films during irradiation. • Asymmetric surface diffusion processes cause local roughening. - Abstract: Wurtzitic GaN films deposited on 6H-SiC(0001) substrates by ion-beam assisted molecular-beam epitaxy were irradiated with hyperthermal nitrogen ions with different fluences at different substrate temperatures. In situ observations with reflection high energy electron diffraction showed that during the irradiation process the surface structure of the GaN films changed from two dimensional to three dimensional at elevated temperatures, but not at room temperature. Atomic force microscopy revealed an enhancement of nanometric holes and canyons upon the ion irradiation at higher temperatures. The roughness of the irradiated and heated GaN films was clearly increased by the ion irradiation in accordance with x-ray reflectivity measurements. A sole thermal decomposition of the films at the chosen temperatures could be excluded. The results are discussed taking into account temperature dependent sputtering and surface uphill adatom diffusion as a function of temperature.

  3. Effect of the low temperature ion nitriding on the wear and corrosion resistance of 316L austenitic stainless steel biomaterials

    International Nuclear Information System (INIS)

    Sudjatmoko; Bambang Siswanto; Wirjoadi; Lely Susita RM

    2012-01-01

    In the present study has been completed done the ion nitriding process and characterization of the 316L SS samples. The ion nitriding process has been conducted on the samples for nitriding temperature variation of 350, 400, 450, 500, and 550 °C, the optimum nitrogen gas pressure of 1.8 mbar and optimum nitriding time of 3 hours. The micro-structure, elemental composition and the phase structure of the nitride layer formed on the surface of samples were observed using the techniques of SEM-EDAX and XRD, respectively. It is known that a thin layer of iron nitrides has been formed on the surface of the samples. Iron nitride layer has a phase structure including ε-Fe_2_-_3N, γ'-Fe_4N, CrN, Cr_2N and expanded austenite γN. The characterization results of the wear resistance of the 316L SS samples showed an increasing of about 2.6 times the wear resistance of standard samples after nitriding temperature of 350 °C. From the corrosion test by using the Hanks solution was obtained 29.87 mpy corrosion rate or the increasing of corrosion resistance of about 137%. Thus it can be seen that by using ion nitriding technique the iron nitride layer has been formed on the surface of the 316L SS samples, and they have an excellent properties of wear resistance and corrosion resistance, which were caused especially due to the formation of an expanded austenite γN. Properties of the high hardness and has the good corrosion resistance, especially due to the formation of iron nitride and expanded austenite phases γN at low temperature nitriding process. (author)

  4. Ion nitriding of aluminium

    International Nuclear Information System (INIS)

    Fitz, T.

    2002-09-01

    The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

  5. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

  6. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Science.gov (United States)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  7. Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

    2004-01-01

    Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

  8. A study on surface properties and high temperature oxidation behavior of ion nitrided FC-25 gray cast iron

    International Nuclear Information System (INIS)

    Hur, In Chang; Son, Kun Su; Yoon, Jae Hong; Cho, Tong Yul; Park, Bong Gyu; Kim, Hyun Soo; Kim, In Soo

    2005-01-01

    Surface properties and high temperature oxidation behavior were investigated for FC-25 Gray Cast Iron(GCI) and the ion intrided GCI(N-GCI). The GCI was pre-cleaned to improve hardness to the optimum pre-sputtering parameters with an Ar/H 2 ratio of 1/2, working pressure of 3 torr, working temperature of 550 .deg. C and working time of 1hour. The optimum nitriding conditions for the maximum hardness of 560∼575 Hv were an N 2 /H 2 ratio of 3/1, working pressure of 3 torr, and working temperature of 575 deg. C. The thickness of graphite in the GCI was increased by increasing the working temperature from 525 .deg. C to 595 .deg. C for the nitriding time of 6∼18hrs. XRD patterns showed FeO and Fe 2 O 3 peaks for both the oxidized N-GCI and GCI at temperature of 600 .deg. C and 800 .deg. C under atmospheric environment for both 24 and 60hours. At 800 .deg. C, above the Fe 4 N decomposition temperature of 680 .deg. C, the oxidation rate of N-GCI was greater than that of the GCI. The most abundant nitride, Fe 4 N, was decomposed and the nitrogen gas given off by the decomposition made the protective film porous by degassing through the film. But at 600 .deg. C, below the decomposition temperature, the degree of oxidation of N-GCI was lower than that of the GCI because the nitride film worked as protective barrier for oxidation. Finite element modeling of elastic contact wear problems was performed to demonstrate the feasibility of applying the finite element method to fretting wear problems. The elastic beam problem, with existing solutions, is treated as a numerical example. By introducing a control parameter s, which scaled up the wear constant and scaled down the cycle numbers, the algorithm was shown to greatly reduce the time required for the analysis. The work rate model was adopted in the wear model. In the three-dimensional finite element analysis, a quarterly symmetric model was used to simulate cross tubes contacting at right angles. The wear constant of

  9. Effect of temperature and pressure on wear properties of ion nitrided AISI 316 and 409 stainless steels

    International Nuclear Information System (INIS)

    Fernandes, Frederico Augusto Pires; Heck, Stenio Cristaldo; Pereira, Ricardo Gomes; Casteletti, Luiz Carlos; Nascente, Pedro Augusto de Paula

    2010-01-01

    Stainless steels are widely used in chemical and other industries due to their corrosion resistance property. However, because of their low hardness and wear properties, their applications are limited. Many attempts have been made to increase the surface hardness of these materials by using plasma techniques. Plasma nitriding is distinguished by its effectiveness, and for presenting a relatively low cost and being a clean process, producing hard surface layers on stainless steels. Aiming to verify the influence of the temperature and pressure on the modified resultant layers, samples of AISI 316 and 409 stainless steels were plasma nitrided in two different temperatures (450 and 500°C) and pressures of 400, 500, and 600Pa for 5h. After the nitriding treatment, the layers were analyzed by means of optical microscopy and wear tests. Wear tests were conducted in a fixed-ball micro-wear machine without lubrication. After the plasma nitriding treatment on AISI 316 and 409 samples, homogeneous and continuous layers were produced and their thicknesses increased as the temperature increased, and as the pressure decreased. The nitriding treatment on the AISI 316 steel sample resulted on the formation of expanded austenite layers at 450°C, and chromium nitrides (CrN and Cr_2N) phases at 500°C. The nitriding treatment on AISI 409 sample yielded the formation of similar layers for both treatment temperatures; these layers constituted mainly by chromium (Cr_2N) and iron (Fe_2N, Fe3_N, and Fe_4N) nitrides. After the nitriding treatment, the AISI 316 steel sample presented higher wear resistance for lower temperature and pressure values. The increase on layer fragility, for higher temperature and pressure values can be responsible for this inverse tendency. The wear resistance of the nitrided AISI 409 sample followed a logic tendency: the harder the layer the better the performance, i.e. the performance was improved with the increase in both the temperature and pressure

  10. Ion nitridation - physical and technological aspects

    International Nuclear Information System (INIS)

    Elbern, A.W.

    1980-01-01

    Ion nitridation, is a technique which allows the formation of a controlled thickness of nitrides in the surface of the material, using this material as the cathode in a low pressure glow discharge, which presents many advantages over the conventional method. A brief review of the ion nitriding technique, the physical fenomena involved, and we discuss technological aspects of this method, are presented. (Author) [pt

  11. Heavy Ion Irradiation Effects in Zirconium Nitride

    International Nuclear Information System (INIS)

    Egeland, G.W.; Bond, G.M.; Valdez, J.A.; Swadener, J.G.; McClellan, K.J.; Maloy, S.A.; Sickafus, K.E.; Oliver, B.

    2004-01-01

    Polycrystalline zirconium nitride (ZrN) samples were irradiated with He + , Kr ++ , and Xe ++ ions to high (>1.10 16 ions/cm 2 ) fluences at ∼100 K. Following ion irradiation, transmission electron microscopy (TEM) and grazing incidence X-ray diffraction (GIXRD) were used to analyze the microstructure and crystal structure of the post-irradiated material. For ion doses equivalent to approximately 200 displacements per atom (dpa), ZrN was found to resist any amorphization transformation, based on TEM observations. At very high displacement damage doses, GIXRD measurements revealed tetragonal splitting of some of the diffraction maxima (maxima which are associated with cubic ZrN prior to irradiation). In addition to TEM and GIXRD, mechanical property changes were characterized using nano-indentation. Nano-indentation revealed no change in elastic modulus of ZrN with increasing ion dose, while the hardness of the irradiated ZrN was found to increase significantly with ion dose. Finally, He + ion implanted ZrN samples were annealed to examine He gas retention properties of ZrN as a function of annealing temperature. He gas release was measured using a residual gas analysis (RGA) spectrometer. RGA measurements were performed on He-implanted ZrN samples and on ZrN samples that had also been irradiated with Xe ++ ions, in order to introduce high levels of displacive radiation damage into the matrix. He evolution studies revealed that ZrN samples with high levels of displacement damage due to Xe implantation, show a lower temperature threshold for He release than do pristine ZrN samples. (authors)

  12. Low temperature anodic bonding to silicon nitride

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Bouaidat, Salim

    2000-01-01

    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bu...

  13. Nitridation of vanadium by ion beam irradiation

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

    1994-01-01

    The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

  14. Ion nitriding in 316=L stainless steel

    International Nuclear Information System (INIS)

    Rojas-Calderon, E.L.

    1989-01-01

    Ion nitriding is a glow discharge process that is used to induce surface modification in metals. It has been applied to 316-L austenitic stainless steel looking for similar benefits already obtained in other steels. An austenitic stainless steel was selected because is not hardenable by heat treatment and is not easy to nitride by gas nitriding. The samples were plastically deformed to 10, 20, 40, 50 AND 70% of their original thickness in order to obtain bulk hardening and to observe nitrogen penetration dependence on it. The results were: an increase of one to two rockwell hardness number (except in 70% deformed sample because of its thickness); an increase of even several hundreds per cent in microhardness knoop number in nitrided surface. The later surely modifies waste resistance which would be worth to quantify in further studies. Microhardness measured in an internal transversal face to nitrided surface had a gradual diminish in its value with depth. Auger microanalysis showed a higher relative concentration rate C N /C F e near the surface giving evidence of nitrogen presence till 250 microns deep. The color metallography etchant used, produced faster corrosion in nitrited regions. Therefore, corrosion studies have to be done before using ion nitrited 316-L under these chemicals. (Author)

  15. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  16. Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

    International Nuclear Information System (INIS)

    Valizadeh, R.; Colligon, J.S.; Katardiev, I.V.; Faunce, C.A.; Donnelly, S.E.

    1998-01-01

    Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm -2 and 2 GeV xenon ion with a dose of 1E12 ions.cm -2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C 3 N 4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C 3 N 4 matrix was predominantly sp 2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

  17. Microstructural Characterization of Low Temperature Gas Nitrided Martensitic Stainless Steel

    DEFF Research Database (Denmark)

    Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    2015-01-01

    The present work presents microstructural investigations of the surface zone of low temperature gas nitrided precipitation hardening martensitic stainless steel AISI 630. Grazing incidence X-ray diffraction was applied to investigate the present phases after successive removal of very thin sections...... of the sample surface. The development of epsilon nitride, expanded austenite and expanded martensite resulted from the low temperature nitriding treatments. The microstructural features, hardness and phase composition are discussed with emphasis on the influence of nitriding duration and nitriding potential....

  18. Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Kumar, Mahesh [Physics and Energy Harvesting Group, National Physical Laboratory, New Delhi 110012 (India); Nötzel, R. [ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Shivaprasad, S.M., E-mail: smsprasad@jncasr.ac.in [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

    2014-06-01

    We present the surface modification of Si(111) into silicon nitride by exposure to energetic N{sub 2}{sup +} ions. In-situ UHV experiments have been performed to optimize the energy and fluence of the N{sub 2}{sup +} ions to form silicon nitride at room temperature (RT) and characterized in-situ by X-ray photoelectron spectroscopy. We have used N{sub 2}{sup +} ion beams in the energy range of 0.2–5.0 keV of different fluence to induce surface reactions, which lead to the formation of Si{sub x}N{sub y} on the Si(111) surface. The XPS core level spectra of Si(2p) and N(1s) have been deconvoluted into different oxidation states to extract qualitative information, while survey scans have been used for quantifying of the silicon nitride formation, valence band spectra show that as the N{sub 2}{sup +} ion fluence increases, there is an increase in the band gap. The secondary electron emission spectra region of photoemission is used to evaluate the change in the work function during the nitridation process. The results show that surface nitridation initially increases rapidly with ion fluence and then saturates. - Highlights: • A systematic study for the formation of silicon nitride on Si(111). • Investigation of optimal energy and fluence for energetic N{sub 2}{sup +} ions. • Silicon nitride formation at room temperature on Si(111)

  19. Ion-nitriding of austenitic stainless steels

    International Nuclear Information System (INIS)

    Pacheco, O.; Hertz, D.; Lebrun, J.P.; Michel, H.

    1995-01-01

    Although ion-nitriding is an extensively industrialized process enabling steel surfaces to be hardened by nitrogen diffusion, with a resulting increase in wear, seizure and fatigue resistance, its direct application to stainless steels, while enhancing their mechanical properties, also causes a marked degradation in their oxidation resistance. However, by adaption of the nitriding process, it is possible to maintain the improved wear resistant properties while retaining the oxidation resistance of the stainless steel. The controlled diffusion permits the growth of a nitrogen supersaturated austenite layer on parts made of stainless steel (AISI 304L and 316L) without chromium nitride precipitation. The diffusion layer remains stable during post heat treatments up to 650 F for 5,000 hrs and maintains a hardness of 900 HV. A very low and stable friction coefficient is achieved which provides good wear resistance against stainless steels under diverse conditions. Electrochemical and chemical tests in various media confirm the preservation of the stainless steel characteristics. An example of the application of this process is the treatment of Reactor Control Rod Cluster Assemblies (RCCAs) for Pressurized Water Nuclear Reactors

  20. Stainless steels low temperature nitriding

    International Nuclear Information System (INIS)

    Roux, T.; Darbeida, A.; Von Stebut, J.; Michel, H.; Lebrun, J.P.; Hertz, D.

    1995-01-01

    Nitrogen ions implantation of 316L stainless steel leads to monophasic diffusion layers, which are constituted of a solid solution (γ N ) fcc, metastable, nitrogen sur-saturated, and without order. This article shows that for 316L stainless steels,these layers improve the tribological properties without degradation of the corrosion resistance. (A.B.). 13 refs. 6 figs

  1. Corrosion fatigue behaviour of ion nitrided AISI 4140 steel

    Energy Technology Data Exchange (ETDEWEB)

    Genel, K. [Sakarya Univ., Adapazari (Turkey). Mech. Eng. Dept.; Demirkol, M.; Guelmez, T. [Faculty of Mechanical Engineering, Istanbul Technical University, Guemuessuyu, 80191, Istanbul (Turkey)

    2000-08-31

    Machine components suffer from corrosion degradation of fatigue characteristics and improvement can be attained by the application of a nitriding treatment, particularly to low alloy steels. In the present study, the effect of ion nitriding on corrosion fatigue performance of AISI 4140 steel has been investigated by conducting a series of rotary bending corrosion fatigue tests at 95 Hz, in 3% NaCl aqueous solution. Hourglass shaped, 4 mm diameter fatigue specimens were ion nitrided at 748 K for 1, 3, 8 and 16 h prior to the tests. It was observed that distinct fatigue limit behaviour of ion nitrided steel in air completely disappeared in corrosive environment besides severe degradation in fatigue characteristics. An improvement reaching to 60% in corrosion fatigue strength can be attained by successive ion nitriding practice based on a fatigue life of 10{sup 7} cycles. An attempt was made to establish an empirical relationship between corrosion fatigue strength and relative case depth, which considers the size of the ion nitrided specimen. It was also determined that a power relationship holds between corrosion fatigue strength and fatigue life of ion nitrided steel. The presence of white layer has resulted in additional improvement in corrosion fatigue resistance, and it was observed that corrosion fatigue cracks were initiated dominantly under the white layer by pit formation mechanism. (orig.)

  2. Corrosion fatigue behaviour of ion nitrided AISI 4140 steel

    International Nuclear Information System (INIS)

    Genel, K.

    2000-01-01

    Machine components suffer from corrosion degradation of fatigue characteristics and improvement can be attained by the application of a nitriding treatment, particularly to low alloy steels. In the present study, the effect of ion nitriding on corrosion fatigue performance of AISI 4140 steel has been investigated by conducting a series of rotary bending corrosion fatigue tests at 95 Hz, in 3% NaCl aqueous solution. Hourglass shaped, 4 mm diameter fatigue specimens were ion nitrided at 748 K for 1, 3, 8 and 16 h prior to the tests. It was observed that distinct fatigue limit behaviour of ion nitrided steel in air completely disappeared in corrosive environment besides severe degradation in fatigue characteristics. An improvement reaching to 60% in corrosion fatigue strength can be attained by successive ion nitriding practice based on a fatigue life of 10 7 cycles. An attempt was made to establish an empirical relationship between corrosion fatigue strength and relative case depth, which considers the size of the ion nitrided specimen. It was also determined that a power relationship holds between corrosion fatigue strength and fatigue life of ion nitrided steel. The presence of white layer has resulted in additional improvement in corrosion fatigue resistance, and it was observed that corrosion fatigue cracks were initiated dominantly under the white layer by pit formation mechanism. (orig.)

  3. Manufacturing technology development of plasma/ion nitriding for improvement of hardness of machine components and tools

    International Nuclear Information System (INIS)

    Suprapto; Tjipto Sujitno; Saminto

    2015-01-01

    The manufacturing technology development of plasma/ion nitriding to improve of hardness of machine components and tools has been done. The development of this technology aims to improve device performance plasma nitriding double chamber and conducted with the addition of thermal radiation shield. Testing was done by testing for preheating operation (start-up), test operation for conditions nitriding and test for nitriding process. The results show that: the plasma nitriding device can be operated for nitriding process at the temperature of about 500 °C for 6 hours, using the thermal radiation shield obtained outside wall temperature of about 65 °C and shorten start-up time to about 60 minutes. The use of thermal radiation shield can also improve the efficiency of the electric power supply and increase the operating temperature for nitriding process. Test for nitriding obtained increase of hardness 1.33 times for the original camshaft (genuine parts) and 1.8 times for the imitation camshaft (imitation parts), the results are compared with after the tempering process at a temperature of 600 °C. For sample SS 304 was 2.45 times compared with before nitrided These results indicate that the development of manufacturing technology of plasma/ion nitriding to increase hardness of machine components and tools have been successfully able to increase the hardness, although still need to be optimized. Besides that, these devices can be developed to use for the process of carburizing and carbonitriding. (author)

  4. Anomalous microstructural changes in III-nitrides under ion bombardment

    International Nuclear Information System (INIS)

    Kucheyev, S.O.; Williams, J.S.; Jagadish, C.

    2002-01-01

    Full text: Group-III nitrides (GaN, AlGaN, and InGaN) are currently a 'hot topic' in the physics and material research community due to very important technological applications of these materials in (opto)electronics. In the fabrication of III-nitride-based devices, ion bombardment represents a very attractive processing tool. However, ion-beam-produced lattice disorder and its undesirable consequences limit technological applications of ion implantation. Hence, studies of ion-beam-damage processes in Ill-nitrides are not only physically interesting but also technologically important. In this study, wurtzite GaN, AlGaN, and InGaN films exposed to ion bombardment under a wide range of irradiation conditions are studied by a combination of transmission electron microscopy (TEM), environmental scanning electron microscopy (ESEM), energy dispersive x-ray spectrometry (EDS), atomic force microscopy (AFM), cathodoluminescence (CL), and Rutherford backscattering/channeling (RBS/C) spectrometry. Results show that, unlike the situation for mature semiconductors such as Si and GaAs, Ill-nitrides exhibit a range of intriguing behavior involving extreme microstructural changes under ion bombardment. In this presentation, the following aspects are discussed: (i) formation of lattice defects during ion bombardment, (ii) ion-beam-induced phase transformations, (iii) ion-beam-produced stoichiometric imbalance and associated material decomposition, and (iv) an application of charging phenomena during ESEM imaging for studies of electrical isolation in GaN by MeV light ion irradiation. Emphasis is given to the (powerful) application of electron microscopy techniques for the understanding of physical processes occurring in Ill-nitrides under ion bombardment. Copyright (2002) Australian Society for Electron Microscopy Inc

  5. Tribological and microstructural characteristics of ion-nitrided steels

    Science.gov (United States)

    Spalvins, T.

    1983-01-01

    Three steels AISI 4140, AISI 4340 and AISI 304 stainless steel were ion nitrided in a plasma consisting of a 75:25 mixture of H2:N2, sometimes with a trace of CH4. Their surface topography was characterized by SEM and two distinct compound phases were identified: the gamma and the epsilon. The core-case hardness profiles were also established. The low Cr alloy steels have an extended diffusion zone in contrast to the 3034 stainless steels which have a sharp interface. The depth of ion-nitriding is increased as the Cr content is decreased. Friction tests reveal that the gamma surface phase has a lower coefficient of friction than the epsilon phase. The lowest coefficient of friction is achieved when both the rider and the specimen surface are ion nitrided. Previously announced in STAR as N83-24635

  6. Mechanical and tribological properties of AISI 304 stainless steel nitrided by glow discharge compared to ion implantation and plasma immersion ion implantation

    International Nuclear Information System (INIS)

    Foerster, C.E.; Serbena, F.C.; Silva, S.L.R. da; Lepienski, C.M.; Siqueira, C.J. de M.; Ueda, M.

    2007-01-01

    Results about mechanical and tribological behavior of AISI 304 stainless steel nitrided by three different ion beam processes - glow discharge (GD), ion implantation (II) and plasma immersion ion implantation (PI3) are reported. Expanded austenite γ N and nitrides phases (Fe 2+x N, γ'-Fe 4 N and Cr-N) were identified as a function of nitriding conditions. Hardness (H) and elastic modulus (E) profiles were obtained by instrumented penetration. The hardness reached values as high as 21 GPa by PI3. Tribological behavior was studied by reciprocating sliding tests with a WC (Co) ball at room temperature (RT) in dry condition. Different wear regimes were identified in the friction coefficient profiles. The profile form and the running-in distance are strongly dependent on the nitriding process. Adhesive and abrasive wear components can be inferred from these friction profiles. Hardness and tribological performance, after the nitriding processes, are discussed in terms of surface microstructure

  7. Effect of ion nitridation process on hardness and the corrosion resistance of biomaterials

    International Nuclear Information System (INIS)

    Wirjoadi; Lely Susita; Bambang Siswanto; Sudjatmoko

    2012-01-01

    Ion nitriding process has been performed on metal biomaterials to improve their mechanical properties of materials, particularly to increase hardness and corrosion resistance. This metallic biomaterials used for artificial bone or a prosthetic graft and used as devices of orthopedic biomaterials are usually of 316L SS metal-type and Ti-6Al-4V alloy. The purpose of this study is to research the development and utilization of ion nitridation method in order to get iron and titanium nitride thin films on the metallic biomaterials for artificial bone that has wear resistance and corrosion resistance is better. Microhardness of the samples was measured using a microhardness tester, optimum hardness of SS 316L samples are about 582 VHN, this was obtained at the nitriding temperature of 500 °C, the nitriding time of 3 hours and the nitrogen gas pressure of 1.6 mbar, while optimum hardness of Ti-6Al-4V alloy is 764 VHN, this was obtained at the nitriding temperature of 500 °C, the nitriding time of 4 hours and the nitrogen gas pressure of 1.6 mbar. The hardness value of SS 316L sample and Ti-6Al-4V alloy increase to 143% and 153%, if compared with standard samples. The optimum corrosion resistance at temperature of 350 °C for SS 316L and Ti-6Al-4V are 260,12 and 110,49 μA/cm 2 or corrosion rate are 29,866 and 15,189 mpy, respectively. (author)

  8. XPS study of the ultrathin a-C:H films deposited onto ion beam nitrided AISI 316 steel

    International Nuclear Information System (INIS)

    Meskinis, S.; Andrulevicius, M.; Kopustinskas, V.; Tamulevicius, S.

    2005-01-01

    Effects of the steel surface treatment by nitrogen ion beam and subsequent deposition of the diamond-like carbon (hydrogenated amorphous carbon (a-C:H) and nitrogen doped hydrogenated amorphous carbon (a-CN x :H)) films were investigated by means of the X-ray photoelectron spectroscopy (XPS). Experimental results show that nitrogen ion beam treatment of the AISI 316 steel surface even at room temperature results in the formation of the Cr and Fe nitrides. Replacement of the respective metal oxides by the nitrides takes place. Formation of the C-N bonds was observed for both ultrathin a-C:H and ultrathin a-CN x :H layers deposited onto the nitrided steel. Some Fe and/or Cr nitrides still were presented at the interface after the film deposition, too. Increased adhesion between the steel substrate and hydrogenated amorphous carbon layer after the ion beam nitridation was explained by three main factors. The first two is steel surface deoxidisation/passivation by nitrogen as a result of the ion beam treatment. The third one is carbon nitride formation at the nitrided steel-hydrogenated amorphous carbon (or a-CN x :H) film interface

  9. Low temperature gaseous nitriding of Ni based superalloys

    DEFF Research Database (Denmark)

    Eliasen, K. M.; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    2010-01-01

    In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr......In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr...

  10. Optimization of time–temperature schedule for nitridation of silicon ...

    Indian Academy of Sciences (India)

    pact was optimized by kinetic study of the reaction, 3Si + 2N2 = Si3N4 at four different temperatures (1250°C,. 1300°C, 1350°C and 1400°C). ... Reaction sintered silicon nitride; nitridation; reaction kinetics. 1. Introduction. Formation of ..... cation of silica layer resulted in active oxidation of silicon at high temperature to ...

  11. Steel surface treatment by a dual process of ion nitriding and thermal shock

    International Nuclear Information System (INIS)

    Feugeas, J.N.; Gomez, B.J.; Nachez, L.; Lesage, J.

    2003-01-01

    Samples of AISI 4140 steel were surface treated under two different processes: ion nitriding and high energy pulsed plasma irradiation. Ion nitriding was performed with a 100 Hz square wave glow discharge, in an atmosphere of an 80% N 2 and 20% H 2 mixture, under a total pressure of 5.6 mbar. Pulsed plasma irradiation consisted in the surface irradiation with a predetermined number of pulses of high energy and short duration argon plasmas, accelerated in a Z-Pinch experiment. Each pulse can induce high temperatures in a short time (<200 ns), followed by an also fast (∼10 μs) cooling down. The samples, ion nitrided and post-irradiated with pulsed plasmas showed important surface property improvements with respect to samples subjected only to ion nitriding. Those improvements consisted of an increase in the thickness of the hardened layer, and in a reduction of the micro-hardness gradient. These results show a complex surface layer structure that improves the support base for loads, reducing the probability of surface layer loosening

  12. Steel surface treatment by a dual process of ion nitriding and thermal shock

    Energy Technology Data Exchange (ETDEWEB)

    Feugeas, J.N.; Gomez, B.J.; Nachez, L.; Lesage, J

    2003-01-22

    Samples of AISI 4140 steel were surface treated under two different processes: ion nitriding and high energy pulsed plasma irradiation. Ion nitriding was performed with a 100 Hz square wave glow discharge, in an atmosphere of an 80% N{sub 2} and 20% H{sub 2} mixture, under a total pressure of 5.6 mbar. Pulsed plasma irradiation consisted in the surface irradiation with a predetermined number of pulses of high energy and short duration argon plasmas, accelerated in a Z-Pinch experiment. Each pulse can induce high temperatures in a short time (<200 ns), followed by an also fast ({approx}10 {mu}s) cooling down. The samples, ion nitrided and post-irradiated with pulsed plasmas showed important surface property improvements with respect to samples subjected only to ion nitriding. Those improvements consisted of an increase in the thickness of the hardened layer, and in a reduction of the micro-hardness gradient. These results show a complex surface layer structure that improves the support base for loads, reducing the probability of surface layer loosening.

  13. Effect of microstructure on the high temperature strength of nitride

    Indian Academy of Sciences (India)

    Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite. J Rakshit P K Das. Composites Volume ... The effect of these parameters on room temperature and high temperature strength of the composite up to 1300°C in ambient condition were studied. The high temperature flexural ...

  14. Improvement of the fatigue strength of AISI 4140 steel by an ion nitriding process

    Energy Technology Data Exchange (ETDEWEB)

    Celik, A. [Atatuerk Univ., Erzurum (Turkey). Dept. of Mech. Eng.; Karadeniz, S. [Dokuz Eyluel Univ., Izmir (Turkey). Dept. of Mech. Eng.

    1995-06-01

    The influence of plasma nitriding on the fatigue behaviour of AISI 4140 low-alloy steel was investigated under varying process conditions of temperature (500-600 C), time (1-12 h), heat treatment before ion nitriding (quenched and tempered, normalized) and gas mixture (50% H{sub 2}-50% N{sub 2}). A rotating bending fatigue machine was used to determine the fatigue strength. It was found that the plasma nitriding improves the fatigue strength and increases the fatigue limit depending on the surface hardness of the case depth. The microstructure of surface and diffusion layers was examined by optical microscopy. The fracture surface of specimens and the origin of fatigue cracks were observed by scanning electron microscopy.

  15. Recombination and photosensitivity centres in boron nitride irradiated with ions

    International Nuclear Information System (INIS)

    Kabyshev, A.; Konusov, F.; Lopatin, V.

    2001-01-01

    The physical-chemical processes, taking place during the irradiation of dielectrics with ions distort the electron structure of the compounds and generate additional localise state in the forbidden zone (FZ). Consequently, the semiconductor layer with the specific surface density of σ ≥ 10 -10 S/ forms on the surface of the dielectric. In addition to his, the high concentration of the radiation-induced defects changes the optical and photoelectric properties of the materials and also the energy characteristics. Analysis of the photoelectric properties indicates that the recombination processes take part in electric transport. These processes restricted the increase of the photosensitivity and changing the kinetics of relaxation of photo conductivity (σ hv ). The practical application of the boron nitride (BN) the in the thermonuclear systems (for example, Ref. 7), stimulates research into the reasons for the deceleration of its properties under the effect of radiation of various types. The conductivity of non-irradiated boron nitride is of the electron-hole nature with a large fraction of the activation component in exchange of the charge carriers between the levels of the defects and the forbidden zones. On the basis of the correlation of the energy and kinetic parameters of luminescence and , the authors of Ref. 8 constructed a model of electron transfers accompanying the electric transport of the boron nitride. In addition to ion-thermal modification, the conductivity of boron nitride is also of the electron-hole nature and is accompanied by luminescence. Examination of the characteristics of luminescence may be useful for obtaining more information on the transport mechanism. In this work, in order to clarify the main parameters of the forbidden band, detailed investigations were carried out into the spectrum of the electronic states of radiation defects which determine the photoelectric and luminescence properties of the modified boron nitride. The

  16. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    Energy Technology Data Exchange (ETDEWEB)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  17. Low Temperature Gaseous Nitriding of a Stainless Steel Containing Strong Nitride Formers

    DEFF Research Database (Denmark)

    Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    Low temperature thermochemical surface hardening of the precipitation hardening austenitic stainless steel A286 in solution treated state was investigated. A286 contains, besides high amounts of Cr, also substantial amounts of strong nitride formers as Ti, Al and V. It is shown that simultaneous...

  18. Neutron ion temperature measurement

    International Nuclear Information System (INIS)

    Strachan, J.D.; Hendel, H.W.; Lovberg, J.; Nieschmidt, E.B.

    1986-11-01

    One important use of fusion product diagnostics is in the determination of the deuterium ion temperature from the magnitude of the 2.5 MeV d(d,n) 3 He neutron emission. The detectors, calibration methods, and limitations of this technique are reviewed here with emphasis on procedures used at PPPL. In most tokamaks, the ion temperature deduced from neutrons is in reasonable agreement with the ion temperature deduced by other techniques

  19. Characterization of Nitride Layers Formed by Nitrogen Ion Implantation into Surface Region of Iron

    International Nuclear Information System (INIS)

    Sudjatmoko; Subki, M. Iyos R.

    2000-01-01

    Ion implantation is a convenient means of modifying the physical and chemical properties of the near-surface region of materials. The nitrogen implantation into pure iron has been performed at room temperature with ion dose of 1.310 17 to 1.310 18 ions/cm 2 and ion energy of 20 to 100 keV. The optimum dose of nitrogen ions implanted into pure iron was around 2.2310 17 ions/cm 2 in order to get the maximum wear resistant. SEM micrographs and EDX show that the nitride layers were found on the surface of substrate. The nitrogen concentration profile was measured using EDX in combination with spot technique, and it can be shown that the depth profile of nitrogen implanted into substrate was nearly Gaussian. (author)

  20. Corrosion-resistant titanium nitride coatings formed on stainless steel by ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Baba, K.; Hatada, R.

    1994-01-01

    Titanium films 70nm thick were deposited on austenitic type 316L stainless steel substrates, and these specimens were irradiated with titanium ions of energy 70kV at a fluence of 1x10 17 ioncm -2 , using a metal vapor vacuum arc (MEVVA) IV metallic ion source at room temperature. After irradiation, titanium nitride (TiN) films were deposited by titanium evaporation and simultaneous irradiation by a nitrogen ion beam, with transport ratios of Ti to N atoms from 0.5 to 10.0 and an ion acceleration voltage of 2kV. The preferred orientation of the TiN films varied from left angle 200 right angle to left angle 111 right angle normal to the surface when the transport ratio was increased. With the help of Auger electron spectroscopy, interfacial mixing was verified. Nitrogen atoms were present in the state of titanium nitride for all transport ratios from 0.5 up to 10.0. However, the chemical bonding state of titanium changed from titanium nitride to the metallic state with increasing transport ratio Ti/N. The corrosion behavior was evaluated in an aqueous solution of sulfuric acid saturated with oxygen, using multisweep cyclic voltammetry measurements. Thin film deposition of pure titanium and titanium implantation prior to TiN deposition have beneficial effects on the suppression of transpassive chromium dissolution. ((orig.))

  1. Microstructure and Hardness of High Temperature Gas Nitrided AISI 420 Martensitic Stainless Steel

    Directory of Open Access Journals (Sweden)

    Ibrahim Nor Nurulhuda Md.

    2014-07-01

    Full Text Available This study examined the microstructure and hardness of as-received and nitrided AISI 420 martensitic stainless steels. High temperature gas nitriding was employed to treat the steels at 1200°C for one hour and four hours using nitrogen gas, followed by furnace cooled. Chromium nitride and iron nitride were formed and concentrated at the outmost surface area of the steels since this region contained the highest concentration of nitrogen. The grain size enlarged at the interior region of the nitrided steels due to nitriding at temperature above the recrystallization temperature of the steel and followed by slow cooling. The nitrided steels produced higher surface hardness compared to as-received steel due to the presence of nitrogen and the precipitation of nitrides. Harder steel was produced when nitriding at four hours compared to one hour since more nitrogen permeated into the steel.

  2. Titanium Nitride and Nitrogen Ion Implanted Coated Dental Materials

    Directory of Open Access Journals (Sweden)

    David W. Berzins

    2012-07-01

    Full Text Available Titanium nitride and/or nitrogen ion implanted coated dental materials have been investigated since the mid-1980s and considered in various applications in dentistry such as implants, abutments, orthodontic wires, endodontic files, periodontal/oral hygiene instruments, and casting alloys for fixed restorations. Multiple methodologies have been employed to create the coatings, but detailed structural analysis of the coatings is generally lacking in the dental literature. Depending on application, the purpose of the coating is to provide increased surface hardness, abrasion/wear resistance, esthetics, and corrosion resistance, lower friction, as well as greater beneficial interaction with adjacent biological and material substrates. While many studies have reported on the achievement of these properties, a consensus is not always clear. Additionally, few studies have been conducted to assess the efficacy of the coatings in a clinical setting. Overall, titanium nitride and/or nitrogen ion implanted coated dental materials potentially offer advantages over uncoated counterparts, but more investigation is needed to document the structure of the coatings and their clinical effectiveness.

  3. Mechanical properties and corrosion resistance of supermartensitic stainless steel surfaces nitrided by plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Schibicheski, Bruna Corina Emanuely; Souza, Gelson Biscaia de; Oliveira, Willian Rafael de; Serbena, Francisco Carlos, E-mail: bruna_schibicheski@hotmail.com [Universidade Estadual de Ponta Grossa (UEPG), PR (Brazil); Marino, Cláudia E.B. [Universidade Federal do Paraná (UFPR), Curitiba, PR (Brazil)

    2016-07-01

    Full text: The supermartensitic stainless steel UNS S41426 is employed in marine oil and gas extraction ducts, where it is subjected to severe conditions of temperature, pressure and exposure to corrosive agents (as the H{sub 2}S). In such environments, pitting corrosion is a major cause of degradation of metallic alloys [1]. This work investigated the effectiveness of the nitrogen inlet, attained here by the plasma immersion ion implantation (PIII) technique, in improving the mechanical properties and corrosion resistance of the material surface. Samples were initially austenitized at 1100°C with a subsequent room temperature oil quenching in order to obtain a fully martensitic structure. The nitriding was carried out under 10 kV implantation energy and 30 ms pulse width. The temperatures ranged from 300 °C to 400°C, achieved by controlling the pulse repetition rates. Samples were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, instrumented indentation, scanning electron microscopy, potentiodynamic anodic polarization tests (in NaCl solution), and cathodic hydrogenation tests (in H{sub 2}SO{sub 4} solution). The PIII nitriding produced stratified layers up to 30 mm thick containing nitrogen expanded martensite and iron nitride phases (γ’-Fe{sub 4}N, ε- Fe{sub 2+x}N), depending on the treatment temperature. Consequently, the surface hardness increased from ∼3GPa (reference) up to ∼13GPa (400°C). Regarding the corrosion resistance, the nitrided surfaces presented a significant improvement as compared with the pristine surface, evidenced by the increase of the corrosion potential, which was also correlated to the hydrogen embrittlement reduction and the subsequent suppression of morphological changes. References: [1] M.G. Fontana, Corrosion Engineering, Singapore: McGraw-Hill, 1987. [2] B.C.E.S. Kurelo et al., Applied Surface Science 349 (2015) 403-414. (author)

  4. Effects of Ion-Nitriding on the Pitting Behavior of Austenitic Stainless Steels Containing Mo

    International Nuclear Information System (INIS)

    Cho, Yong Seok; Choe, Han Cheol; Kim, Kwan Hyu

    1994-01-01

    Austenitic stainless steels(ASS) containing 1-4wt% Mo were ion-nitrided at 550 .deg. C for 20hrs and 30hrs, and their pitting behavior was examined by the electrochemical measurements. The formation of multiphase surface layers composed of the ε-{(Fe, Cr) 2- 3N} and the γ'-{(Fe, Cr) 4 N} phases was observed after ion-nitriding. The compound layers were approximately 50 μm thick after nitriding for 20hrs and 70 μm thick after 30hrs. Anodic polarization curves indicated that passive current density(I p ) and critical current density(I c ) increased, and corrosion potential(E corr ) decreased as a results of ion-nitriding. As the Mo content in the ion-nitrided ASS increased, passivation breakdown potential(E b ) and repassivation potential(E r ) increased, whereas I c and I p decreased. The pit nucleation time of the ASS nitrided for 20hrs was 10 minutes, while that of the 30hr nitrided samples was 3 minutes. The nucleation and growth of pits were significantly increased with the decreasing of Mo content as well as the increasing of ion-nitriding time

  5. Carbon nitride films synthesized by NH3-ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Song, H.W.; Cui, F.Z.; He, X.M.; Li, W.Z.; Li, H.D.

    1994-01-01

    Carbon nitride thin film films have been prepared by NH 3 -ion-beam-assisted deposition with bombardment energies of 200-800 eV at room temperature. These films have been characterized by transmission electron microscopy. Auger electron spectroscopy and x-ray photoelectron spectroscopy for chemical analysis. It was found that the structure of the films varied with the bombardment energy. In the case of 400 eV bombardment, the tiny crystallites immersed on an amorphous matrix were identified to be β-C 3 N 4 . X-ray photoelectron spectroscopy indicated that some carbon atoms and nitrogen atoms form unpolarized covalent bonds in these films. (Author)

  6. Ion implantation and annealing studies in III-V nitrides

    International Nuclear Information System (INIS)

    Zolper, J.C.; Pearton, S.J.

    1996-01-01

    Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n + -surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10 16 cm -2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material

  7. Nitriding of Ti substrate using energetic ions from plasma focus device

    International Nuclear Information System (INIS)

    Henriquez, A; Bhuyan, H; Favre, M; Bora, B; Wyndham, E; Chuaqui, H; Mändl, S; Gerlach, J W; Manova, D

    2012-01-01

    Plasma Focus (PF) discharge is a pulsed plasma producing discharge that generates high temperature and high density plasma for a short duration. PF devices are known to emit intense ion beams pulses of characteristic energy in the keV to a few MeV range, in a time scale of tens of nanoseconds. We have previously investigated the ion flux and energy spectrum of ion beams emitted from a low energy PF, operating at 20 kV, with 1.8 kJ stored energy. It was observed that the ion beams have wide range of energy and intensity spectra with a clear angular anisotropy. Due to the wide range of ion energy and intensity spectra PF has become a subject of current interest for its applications in material sciences including surface modification and thin film deposition. The purpose of this study is the formation of titanium nitride (TiN) thin film and to investigate the structural properties of the TiN thin films in terms of PF angular positions. Substrates like Ti and Ti/Si were nitrided in a 1.8 kJ PF device at different angular positions with respect to the PF axis in order to correlate their surface properties with ion beam parameters. Preliminary characterizations of the ion implanted substrates have been conducted, using SEM, EDX and XRD. Our results indicate the formation of nanocrystalline TiN thin film only in certain angular positions. Angular dependency of the surface morphology was observed, which shows that the surface features strongly depends on ion beam energy and flux. With increasing angular positions, a reduction in the deposition rate and the sputter rate is observed. A pronounced nanostructured surface is only observed at the axis of the pinched plasma column, indicating the dominant role of sputtering and perhaps melting and fast re-crystallization of the surface in creating the nanostructures.

  8. Use of aluminum nitride to obtain temperature measurements in a high temperature and high radiation environment

    Science.gov (United States)

    Wernsman, Bernard R.; Blasi, Raymond J.; Tittman, Bernhard R.; Parks, David A.

    2016-04-26

    An aluminum nitride piezoelectric ultrasonic transducer successfully operates at temperatures of up to 1000.degree. C. and fast (>1 MeV) neutron fluencies of more than 10.sup.18 n/cm.sup.2. The transducer comprises a transparent, nitrogen rich aluminum nitride (AlN) crystal wafer that is coupled to an aluminum cylinder for pulse-echo measurements. The transducer has the capability to measure in situ gamma heating within the core of a nuclear reactor.

  9. Titanium nitride room-temperature ferromagnetic nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Morozov, Iu.G., E-mail: morozov@ism.ac.ru [Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences, 8 Academician Osipyan Street, Chernogolovka, Moscow Region, 142432 (Russian Federation); Belousova, O.V. [Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences, 8 Academician Osipyan Street, Chernogolovka, Moscow Region, 142432 (Russian Federation); Belyakov, O.A. [Ogarev Mordovia State University, Saransk, 68 Bol' shevistskaya Street, 430005 (Russian Federation); Parkin, I.P., E-mail: i.p.parkin@ucl.ac.uk [Department of Chemistry, Materials Chemistry Research Centre, University College London, 20 Gordon Street, London, WC1H 0AJ (United Kingdom); Sathasivam, S. [Department of Chemistry, Materials Chemistry Research Centre, University College London, 20 Gordon Street, London, WC1H 0AJ (United Kingdom); Kuznetcov, M.V., E-mail: maxim1968@mail.ru [All-Russian Research Institute on Problems of Civil Defense and Emergencies of Emergency Control Ministry of Russia (EMERCOM), 7 Davidkovskaya Street, Moscow, 121352 (Russian Federation)

    2016-08-05

    Cubic and near-spherical TiN nanoparticles ranging in average size from 20 to 125 nm were prepared by levitation-jet aerosol synthesis through condensation of titanium vapor in an inert gas flow with gaseous nitrogen injection. The nanoparticles were characterized by using scanning electron microscopy (SEM), X-ray diffraction (XRD), BET measurements, UV–Vis, FT-IR, Raman spectroscopy, XPS, and vibrating-sample magnetometry. Room-temperature ferromagnetism with maximum magnetization up to 2.5 emu/g was recorded for the nanoparticles. The results indicate that the observed ferromagnetic ordering was related to the defect Ti–N structures on the surface of nanoparticles. This suggestion is in good correlation with the measured spectroscopical data. - Highlights: • Levitation-jet aerosol synthesis of TiN nanoparticles (NPs). • SEM, XRD, BET, UV–vis, FT-IR, Raman, XPS and magnetic characterization of the NPs. • Correlation between optical and XPS measurements data and maximum magnetization of the NPs.

  10. Ion temperature gradient instability

    International Nuclear Information System (INIS)

    1989-01-01

    Anomalous ion thermal conductivity remains an open physics issue for the present generation of high temperature Tokamaks. It is generally believed to be due to Ion Temperature Gradient Instability (η i mode). However, it has been difficult, if not impossible to identify this instability and study the anomalous transport due to it, directly. Therefore the production and identification of the mode is pursued in the simpler and experimentally convenient configuration of the Columbia Linear Machine (CLM). CLM is a steady state machine which already has all the appropriate parameters, except η i . This parameter is being increased to the appropriate value of the order of 1 by 'feathering' a tungsten screen located between the plasma source and the experimental cell to flatten the density profile and appropriate redesign of heating antennas to steepen the ion temperature profile. Once the instability is produced and identified, a thorough study of the characteristics of the mode can be done via a wide range of variation of all the critical parameters: η i , parallel wavelength, etc

  11. Corrosion of silicon nitride in high temperature alkaline solutions

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Liyan, E-mail: liyan.qiu@cnl.ca; Guzonas, Dave A.; Qian, Jing

    2016-08-01

    The corrosion of silicon nitride (Si{sub 3}N{sub 4}) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si{sub 3}N{sub 4} experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

  12. Room-temperature ballistic transport in III-nitride heterostructures.

    Science.gov (United States)

    Matioli, Elison; Palacios, Tomás

    2015-02-11

    Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the short electron mean-free-path at RT requires nanoscale devices for which surface effects are a limitation in these materials. We explore the unique properties of wide band-gap III-nitride semiconductors to demonstrate RT ballistic devices. A theoretical model is proposed to corroborate experimentally their optical phonon energy of 92 meV, which is ∼4× larger than in other III-V semiconductors. This allows RT ballistic devices operating at larger voltages and currents. An additional model is described to determine experimentally a characteristic dimension for ballistic transport of 188 nm. Another remarkable property is their short carrier depletion at device sidewalls, down to 13 nm, which allows top-down nanofabrication of very narrow ballistic devices. These results open a wealth of new systems and basic transport studies possible at RT.

  13. Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

    International Nuclear Information System (INIS)

    Czarnowska, Elżbieta; Borowski, Tomasz; Sowińska, Agnieszka; Lelątko, Józef; Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał; Wierzchoń, Tadeusz

    2015-01-01

    Highlights: • Low temperature plasma nitriding process of NiTi shape memory alloy is presented. • The possibility of treatment details of sophisticated shape. • TiN surface layer has diffusive character. • TiN surface layer increases corrosion resistance of NiTi alloy. • Produced TiN layer modify the biological properties of NiTi alloy. - Abstract: NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications

  14. Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

    Energy Technology Data Exchange (ETDEWEB)

    Czarnowska, Elżbieta [Children' s Memorial Health Institute, Pathology Department, Al. Dzieci Polskich 20, 04-730 Warsaw (Poland); Borowski, Tomasz [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland); Sowińska, Agnieszka [Children' s Memorial Health Institute, Pathology Department, Al. Dzieci Polskich 20, 04-730 Warsaw (Poland); Lelątko, Józef [Silesia University, Faculty of Computer Science and Materials Science, 75 Pułku Piechoty 1A, 41-500 Chorzów (Poland); Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland); Wierzchoń, Tadeusz, E-mail: twierz@inmat.pw.edu.pl [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland)

    2015-04-15

    Highlights: • Low temperature plasma nitriding process of NiTi shape memory alloy is presented. • The possibility of treatment details of sophisticated shape. • TiN surface layer has diffusive character. • TiN surface layer increases corrosion resistance of NiTi alloy. • Produced TiN layer modify the biological properties of NiTi alloy. - Abstract: NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications.

  15. The thermal power of aluminum nitride at temperatures between 1350 and 1650 deg C in argon and nitrogen atmospheres. Ph.D. Thesis - Rhine-Westphalia High School at Aachen

    Science.gov (United States)

    Fischer, W. A.; Schuh, B.

    1978-01-01

    The test apparatus for measuring the thermal voltage of aluminum nitride for temperature differences of up to + or - 60 C between 1350 and 1650 C is described. The thermal power and its homogeneous proportion are determined and the heat transfer of the migration ions resulting from the homogeneous thermal power is calculated. The conduction mechanism in aluminum nitride is discussed.

  16. Martensitic Stainless Steels Low-temperature Nitriding: Dependence of Substrate Composition

    OpenAIRE

    Ferreira, Lauro Mariano; Brunatto, Silvio Francisco; Cardoso, Rodrigo Perito

    2015-01-01

    Low-temperature plasma assisted nitriding is a very promising technique to improve surface mechanical properties of stainless steels, keeping unaltered or even improving their surface corrosion resistance. During treatment, nitrogen diffuses into the steel surface, increasing its hardness and wear resistance. In the present work the nitriding process of different martensitic stainless steels was studied. As-quenched AISI 410, 410NiMo, 416 and 420 stainless steel samples were plasma nitrided a...

  17. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2016-12-01

    In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms.

  18. Influence of substrate pre-treatments by Xe{sup +} ion bombardment and plasma nitriding on the behavior of TiN coatings deposited by plasma reactive sputtering on 100Cr6 steel

    Energy Technology Data Exchange (ETDEWEB)

    Vales, S., E-mail: sandra.vales@usp.br [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Brito, P., E-mail: ppbrito@gmail.com [Pontifícia Universidade Católica de Minas Gerais (PUC-MG), Av. Dom José Gaspar 500, 30535-901 Belo Horizonte, MG (Brazil); Pineda, F.A.G., E-mail: pipe8219@gmail.com [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Ochoa, E.A., E-mail: abigail_ochoa@hotmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Droppa, R., E-mail: roosevelt.droppa@ufabc.edu.br [Universidade Federal do ABC (UFABC), Av. dos Estados, 5001, Santo André, SP CEP 09210-580 (Brazil); Garcia, J., E-mail: jose.garcia@sandvik.com [Sandvik Coromant R& D, Lerkrogsvägen 19, SE-12680, Stockholm (Sweden); Morales, M., E-mail: monieriz@gmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Alvarez, F., E-mail: alvarez@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); and others

    2016-07-01

    In this paper the influence of pre-treating a 100Cr6 steel surface by Xe{sup +} ion bombardment and plasma nitriding at low temperature (380 °C) on the roughness, wear resistance and residual stresses of thin TiN coatings deposited by reactive IBAD was investigated. The Xe{sup +} ion bombardment was carried out using a 1.0 keV kinetic energy by a broad ion beam assistance deposition (IBAD, Kaufman cell). The results showed that in the studied experimental conditions the ion bombardment intensifies nitrogen diffusion by creating lattice imperfections, stress, and increasing roughness. In case of the combined pre-treatment with Xe{sup +} ion bombardment and subsequent plasma nitriding, the samples evolved relatively high average roughness and the wear volume increased in comparison to the substrates exposed to only nitriding or ion bombardment. - Highlights: • Effect of Xe ion bombardment and plasma nitriding on TiN coatings was investigated. • Xe ion bombardment with 1.0 KeV increases nitrogen retention in plasma nitriding. • 1.0 KeV ion impact energy causes sputtering, thus increasing surface roughness. • TiN coating wear is minimum after plasma nitriding due to lowest roughness.

  19. Nitrogen uptake and rate-limiting step in low-temperature nitriding of iron

    NARCIS (Netherlands)

    Inia, DK; Vredenberg, AM; Habraken, FHPM; Boerma, DO

    1999-01-01

    Recently, a method to nitride iron in NH3 ambients at low temperature (225-350 degrees C) has been developed. In this method, the Fe is covered with a thin (similar to 40 nm) Ni layer, which acts as a catalyst for the nitriding process. From experiments, in which the amount of nitrogen uptake is

  20. The relationship of microstructure and temperature to fracture mechanics parameters in reaction bonded silicon nitride

    International Nuclear Information System (INIS)

    Jennings, H.M.; Dalgleish, B.J.; Pratt, P.L.

    1978-01-01

    The development of physical properties in reaction bonded silicon nitride has been investigated over a range of temperatures and correlated with microstructure. Fracture mechanics parameters, elastic moduli, strength and critical defect size have been determined. The nitrided microstructure is shown to be directly related to these observed properties and these basic relationships can be used to produce material with improved properties. (orig.) [de

  1. Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

    International Nuclear Information System (INIS)

    Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

    1985-01-01

    Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

  2. Ion energy/momentum effects during ion assisted growth of niobium nitride films

    Science.gov (United States)

    Klingenberg, Melissa L.

    The research described herein was performed to better understand and discern ion energy vs. ion momentum effects during ion beam assisted (IBAD) film growth and their effects on residual stress, crystalline structure, morphology, and composition, which influence film tribological properties. NbxN y was chosen for this research because it is a refractory material that can possess a large number of crystalline structures, and it has been found to have good tribological properties. To separate the effects of momentum transfer per arriving atom (p/a), which considers bombarding species mass, energy, and ion-to-atom transport ratio, from those of energy deposition per arriving atom (E/a), a mass independent parameter, different inert ion beams (krypton, argon, and neon) were used to create a matrix of coatings formed using similar energy deposition, but different momentum transfer and vice versa. Deposition was conducted in a research-scale IBAD system using electron beam evaporation, a radio frequency ion source, and a neutral nitrogen gas backfill. Films were characterized using x-ray diffraction, atomic force microscopy, Rutherford backscattering spectrometry, and residual stress analysis. Direct and quantifiable effects of bombardment were observed; however, energy deposition and momentum transfer effects could not be completely separated, confirming that thin film processes are complex. Complexities arose from ion-specific interactions (ion size, recoil energy, per cent reflected neutrals, Penning ionization, etc.) and chemistry effects that are not considered by the simple models. Overall, it can be stated that bombardment promoted nitride formation, nanocrystallinity, and compressive stress formation; influenced morphology (which influenced post-deposition oxygen uptake) and stress evolution; increased lattice parameter; modified crystalline phase and texture; and led to inert gas incorporation. High stress levels correlated strongly with material disorder and

  3. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

    International Nuclear Information System (INIS)

    Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

    2007-01-01

    Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

  4. Aspects of the practical application of titanium alloys after low temperature nitriding glow discharge in hydrogen- free -gas media

    Energy Technology Data Exchange (ETDEWEB)

    Mashovets, N.S., E-mail: mashovets@rambler.ru [Khmelnickiy National University (Ukraine); Pastukh, I.M., E-mail: pastim@mail.ru [Khmelnickiy National University (Ukraine); Voloshko, S.M. [Khmelnickiy National University (Ukraine); National Technical University of Ukraine “Kyiv Polytechnic Institute” (Ukraine)

    2017-01-15

    Highlights: • Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. • Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). • The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. - Abstract: X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples’ argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm{sup 2}. The above material shows the promise of the technology of low-temperature

  5. Aspects of the practical application of titanium alloys after low temperature nitriding glow discharge in hydrogen- free -gas media

    International Nuclear Information System (INIS)

    Mashovets, N.S.; Pastukh, I.M.; Voloshko, S.M.

    2017-01-01

    Highlights: • Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. • Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). • The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. - Abstract: X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples’ argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm 2 . The above material shows the promise of the technology of low-temperature

  6. Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hae-Min [Institute of NT-IT Fusion Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Jeong, Gyoung Hwa [Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Banyeon 100, Ulsan 44919 (Korea, Republic of); Kim, Sang-Wook [Department of Molecular Science and Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Kim, Chang-Koo, E-mail: changkoo@ajou.ac.kr [Department of Chemical Engineering and Department of Energy Systems Research, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of)

    2017-04-01

    Highlights: • Vanadium nitrides were directly synthesized by a one-step chemical precipitation method. • This method was carried out at a low temperature of 70 °C. • Vanadium nitrides had a specific capacitance of 598 F/g. • The equivalent series resistance of the vanadium nitride electrode was 1.42 Ω after 5000 cycles. - Abstract: Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2–5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

  7. Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

    Science.gov (United States)

    Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

    2018-06-01

    Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

  8. Low temperature aluminum nitride thin films for sensory applications

    Energy Technology Data Exchange (ETDEWEB)

    Yarar, E.; Zamponi, C.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Institute for Materials Science, Chair for Inorganic Functional Materials, Kiel University, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Institute for Materials Science, Chair for Synthesis and Real Structure, Kiel University, D-24143 Kiel (Germany)

    2016-07-15

    A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

  9. Surface analysis in steel nitrides by using Moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Figueiredo, R.S. de.

    1991-07-01

    The formation of iron nitride layer at low temperatures, 600-700 K, by Moessbauer spectroscopy is studied. These layers were obtained basically through two different processes: ion nitriding and ammonia gas nitriding. A preliminary study about post-discharge nitriding was made using discharge in hollow cathode as well as microwave excitation. The assembly of these chambers is also described. The analysis of the nitrided samples was done by CEMS and CXMS, aided by optical microscopy, and the CEMS and CXMS detectors were constructed by ourselves. We also made a brief study about these detectors, testing as acetone as the mixture 80% He+10% C H 4 as detection gases for the use of CEMS. The surface analysis of the samples showed that in the ammonia gas process nitriding the nitrided layer starts by the superficial formation of an iron nitride rich nitrogen. By thermal evolution this nitride promotes the diffusion of nitrogen and the formation of other more stable nitrides. (author)

  10. Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition

    Science.gov (United States)

    Baba, K.; Hatada, R.; Emmerich, R.; Enders, B.; Wolf, G. K.

    1995-12-01

    Silicon nitride films SiN x were deposited on 316L austenitic stainless steel substrates by silicon evaporation and simultaneous nitrogen ion irradiation with an acceleration voltage of 2 kV. In order to study the influence of the nitrogen content on changes in stoichiometry, structure, morphology, thermal oxidation behaviour and corrosion behaviour, the atom to ion transport ratio was systematically varied. The changes of binding states and the stoichiometry were evaluated with XPS and AES analysis. A maximum nitrogen content was reached with a {Si}/{N} transport ratio lower than 2. The films are chemically inert when exposed to laboratory atmosphere up to a temperature of more than 1000°C. XRD and SEM measurements show amorphous and featureless films for transport ratios {Si}/{N} from 1 up to 10. The variation of the corrosion behaviour of coated stainless steel substrates in sulphuric acid and hydrochloric acid shows a minimum at medium transport ratios. This goes parallel with changes in porosity and adhesion. Additional investigations showed that titanium implantation as an intermediate step improves the corrosion resistance considerably.

  11. Low-temperature plasma nitriding of sintered PIM 316L austenitic stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Mendes, Aecio Fernando; Scheuer, Cristiano Jose; Joanidis, Ioanis Labhardt; Cardoso, Rodrigo Perito; Mafra, Marcio; Klein, Aloisio Nelmo; Brunatto, Silvio Francisco, E-mail: brunatto@ufpr.br [Universidade Federal do Parana (UFPR), Curitiba, PR (Brazil). Dept. de Engenharia Mecanica. Grupo de Tecnologia de Fabricacao Assistida pro Plasma e Metalurgia do Po

    2014-08-15

    This work reports experimental results on sintered PIM 316L stainless steel low-temperature plasma nitriding. The effect of treatment temperature and time on process kinetics, microstructure and surface characteristics of the nitrided samples were investigated. Nitriding was carried out at temperatures of 350, 380, 410 and 440 °C , and times of 4, 8 and 16 h, using a gas mixture composed by 60% N2 + 20% H2 + 20% Ar, at a gas flow rate of 5.00 X 10{sup 6} Nm{sup 3-1}, and a pressure of 800 Pa. The treated samples were characterized by scanning electron microscopy, X-ray diffractometry and microhardness measurements. Results indicate that low-temperature plasma nitriding is a diffusion controlled process. The calculated activation energy for nitrided layer growth was 111.4 kJmol{sup -1}. Apparently precipitation-free layers were produced in this study. It was also observed that the higher the treatment temperature and time the higher is the obtained surface hardness. Hardness up to 1343 HV{sub 0.025} was verified for samples nitrided at 440 °C. Finally, the characterization of the treated surface indicates the formation of cracks, which were observed in regions adjacent to the original pores after the treatment. (author)

  12. High temperature mechanical performance of a hot isostatically pressed silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

    1996-01-01

    Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

  13. Ion temperatures in TORTUR III

    International Nuclear Information System (INIS)

    Hendriks, F.B.

    1985-12-01

    Spatially resolved ion-energy distributions are presented for discharges in the TORTUR III tokamak. The measurements are performed in an active method, using a neutral hydrogen probing beam of 20-30 keV, to enhance charge-exchange processes along its path, as well as by the usual passive method. Ion temperatures can amount up to 1 keV

  14. Influence of Plastic Deformation on Low Temperature Surface Hardening of Austenitic Stainless Steel by Gaseous Nitriding

    DEFF Research Database (Denmark)

    Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

    2015-01-01

    This article addresses an investigation of the influence of plastic deformation on low temperature surface hardening by gaseous nitriding of two commercial austenitic stainless steels: AISI 304 and EN 1.4369. The materials were plastically deformed to different equivalent strains by uniaxial...... demonstrate that a case of expanded austenite develops and that, in particular, strain-induced martensite has a large influence on the nitrided zone....

  15. Modification of Low-Alloy Steel Surface by High-Temperature Gas Nitriding Plus Tempering

    Science.gov (United States)

    Jiao, Dongling; Li, Minsong; Ding, Hongzhen; Qiu, Wanqi; Luo, Chengping

    2018-02-01

    The low-alloy steel was nitrided in a pure NH3 gas atmosphere at 640 660 °C for 2 h, i.e., high-temperature gas nitriding (HTGN), followed by tempering at 225 °C, which can produce a high property surface coating without brittle compound (white) layer. The steel was also plasma nitriding for comparison. The composition, microstructure and microhardness of the nitrided and tempered specimens were examined, and their tribological behavior investigated. The results showed that the as-gas-nitrided layer consisted of a white layer composed of FeN0.095 phase (nitrided austenite) and a diffusional zone underneath the white layer. After tempering, the white layer was decomposed to a nano-sized (α-Fe + γ'-Fe4N + retained austenite) bainitic microstructure with a high hardness of 1150HV/25 g. Wear test results showed that the wear resistance and wear coefficient yielded by the complex HTGN plus tempering were considerably higher and lower, respectively, than those produced by the conventional plasma nitriding.

  16. Structural materialization of stainless steel molds and dies by the low temperature high density plasma nitriding

    Directory of Open Access Journals (Sweden)

    Aizawa Tatsuhiko

    2015-01-01

    Full Text Available Various kinds of stainless steels have been widely utilized as a mold substrate material for injection molding and as a die for mold-stamping and direct stamping processes. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical elements at present. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness of 1400 Hv within its thickness of 40 μm without any formation of nitrides after 14.4 ks plasma nitriding at 693 K. This nitrogen solid-solution treated stainless steel had thermal resistivity even at the mold-stamping conditions up to 900 K.

  17. Low temperature high density plasma nitriding of stainless steel molds for stamping of oxide glasses

    Directory of Open Access Journals (Sweden)

    Aizawa Tatsuhiko

    2016-01-01

    Full Text Available Various kinds of stainless steels have been widely utilized as a die for mold- and direct-stamping processes of optical oxide glasses. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical oxide-glass elements. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness over 1400 HV within its thickness of 50 μm without any formation of nitrides after plasma nitriding at 693 K for 14.4 ks. This plasma-nitrided mold was utilized for mold-stamping of two colored oxide glass plates at 833 K; these plates were successfully deformed and joined into a single glass plate by this stamping without adhesion or galling of oxide glasses onto the nitrided mold surface.

  18. Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

    Science.gov (United States)

    Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

    2018-03-01

    Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

  19. Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers

    Energy Technology Data Exchange (ETDEWEB)

    Baranowski, M.; Misiewicz, J. [Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2015-10-21

    We report theoretical studies of spin polarization dynamics in dilute nitride semiconductors. We develop a commonly used rate equation model [Lagarde et al., Phys. Status Solidi A 204, 208 (2007) and Kunold et al. Phys. Rev. B 83, 165202 (2011)] to take into account the influence of shallow localizing states on the temperature dependence of spin polarization dynamics and a spin filtering effect. Presented investigations show that the experimentally observed temperature dependence of a spin polarization lifetime in dilute nitrides can be related to the electron capture process by shallow localizing states without paramagnetic properties. This process reduces the efficiency of spin filtering effect by deep paramagnetic centers, especially at low temperatures.

  20. Structure of boron nitride after the high-temperature shock compression

    International Nuclear Information System (INIS)

    Kurdyumov, A.V.; Ostrovskaya, N.F.; Pilipenko, V.A.; Pilyankevich, A.N.; Savvakin, G.I.; Trefilov, V.I.

    1979-01-01

    Boron nitride structure changes as a result of high temperature dynamic compression are studied. The X-ray technique and transmission electron microscopy have been applied. The data on the structure and regularities of formation of diamond-like modifications of boron nitride at high temperature impact compression permit to consider martensite transformation as the first stage of formation of the sphalerite phase stable at high pressures. The second stage is possible if the temperature at the impact moment is sufficiently high for intensive diffusion processes

  1. Molecular carbon nitride ion beams for enhanced corrosion resistance of stainless steel

    Science.gov (United States)

    Markwitz, A.; Kennedy, J.

    2017-10-01

    A novel approach is presented for molecular carbon nitride beams to coat stainless surfaces steel using conventional safe feeder gases and electrically conductive sputter targets for surface engineering with ion implantation technology. GNS Science's Penning type ion sources take advantage of the breaking up of ion species in the plasma to assemble novel combinations of ion species. To test this phenomenon for carbon nitride, mixtures of gases and sputter targets were used to probe for CN+ ions for simultaneous implantation into stainless steel. Results from mass analysed ion beams show that CN+ and a variety of other ion species such as CNH+ can be produced successfully. Preliminary measurements show that the corrosion resistance of stainless steel surfaces increased sharply when implanting CN+ at 30 keV compared to reference samples, which is interesting from an application point of view in which improved corrosion resistance, surface engineering and short processing time of stainless steel is required. The results are also interesting for novel research in carbon-based mesoporous materials for energy storage applications and as electrode materials for electrochemical capacitors, because of their high surface area, electrical conductivity, chemical stability and low cost.

  2. Phonon dispersion relation of uranium nitride above and below the Neel temperature

    International Nuclear Information System (INIS)

    Dolling, G.; Holden, T.M.; Svensson, E.C.; Buyers, W.J.L.; Lander, G.H.

    1977-01-01

    Neutron coherent inelastic scattering measurements have been made of the phonon dispersion relation of uranium nitride both above and below the Neel temperature T N = 50 K. Within the precision of the measurements, about 1% in frequency and 10% in line width and in scattered neutron intensity, no significant changes in these phonon properties were observed as a function of temperature other than those arising from population factor changes and a small stiffening of the lattice as the temperature decreases. At 4.2 K, two acoustic and two optic branches have been determined for each of the [001], [110] and [111] directions. The optic mode measurements revealed (a) a 20% variation in frequency across the Brillouin zone and (b) and interesting disposition of the LO and TO modes, such that ν LO > ν TO along [001] and [11-], while the reverse is true along the [111] directions. Within the experimental resolution, the LO and TO modes are degenerate near q = 0. We have been unable to obtain any satisfactory description of these results on the basis of conventional theoretical treatments (e.g. rigid-ion or shell models). Other possible interpretations of the results are discussed. (author)

  3. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abendroth, B.E.

    2004-08-01

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  4. Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors

    Science.gov (United States)

    Patterson, Richard L.; Boomer, Kristen T.; Scheick, Leif; Lauenstein, Jean-Marie; Casey, Megan; Hammoud, Ahmad

    2014-01-01

    The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.

  5. Formation of oriented nitrides by N+ ion implantation in iron single crystals

    International Nuclear Information System (INIS)

    Costa, A.R.G.; Silva, R.C. da; Ferreira, L.P.; Carvalho, M.D.; Silva, C.; Franco, N.; Godinho, M.

    2014-01-01

    Iron single crystals were implanted with nitrogen at room temperature, with a fluence of 5×10 17 cm −2 and 50 keV energy, to produce iron nitride phases and characterize the influence of the crystal orientation. The stability and evolution of the nitride phases and diffusion of implanted nitrogen were studied as a function of successive annealing treatments at 250 °C in vacuum. The composition, structure and magnetic properties were characterized using RBS/channeling, X-Ray Diffraction, Magnetic Force Microscopy, Magneto-optical Kerr Effect and Conversion Electron Mössbauer Spectroscopy. In the as-implanted state the formation of Fe 2 N phase was clearly identified in all single crystals. This phase is not stable at 250 °C and annealing at this temperature promotes the formation of ε-Fe 3 N, or γ′-Fe 4 N, depending on the orientation of the substrate. - Highlights: • Oriented magnetic iron nitrides were obtained by nitrogen implantation into iron single crystals. • The stable magnetic nitride phase at 250 °C depends on the orientation of the host single crystal, being γ'-Fe 4 N or ε-Fe 3 N. • The easy magnetization axis was found to lay in the (100) plane for cubic γ'-Fe 4 N and out of (100) plane for hexagonal ε-Fe 3 N

  6. Low-Temperature Nitriding of Deformed Austenitic Stainless Steels with Various Nitrogen Contents Obtained by Prior High-Temperature Solution Nitriding

    DEFF Research Database (Denmark)

    Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

    2016-01-01

    In the past decades, high nitrogen steels (HNS) have been regarded as substitutes for conventional austenitic stainless steels because of their superior mechanical and corrosion properties. However, the main limitation to their wider application is their expensive production process....... As an alternative, high-temperature solution nitriding has been applied to produce HNS from three commercially available stainless steel grades (AISI 304L, AISI 316, and EN 1.4369). The nitrogen content in each steel alloy is varied and its influence on the mechanical properties and the stability of the austenite...... investigated. Both hardness and yield stress increase and the alloys remain ductile. In addition, strain-induced transformation of austenite to martensite is suppressed, which is beneficial for subsequent low-temperature nitriding of the surface of deformed alloys. The combination of high- and low...

  7. Production of AlN films: ion nitriding versus PVD coating

    International Nuclear Information System (INIS)

    Figueroa, U.; Salas, O.; Oseguera, J.

    2004-01-01

    The properties of AlN render this material very attractive for optical, electronic, and tribological applications; thus, a great interest exists for the production of thin AlN films on a variety of substrates. Many methods have been developed for this purpose where two processes stand out: plasma-assisted nitriding (PAN) and PVD coating. In the present paper, we compare the processing advantages and disadvantages of both methods in terms of the characteristics of the layers formed. AlN production by ion nitriding is very sensitive to presputtering cleaning and working pressure. Layers several micrometers thick can be produced in a few hours, which are formed by a fine mixture of Al+AlN. The surface morphology of the layers is rather rough. On the other hand, formation of PVD AlN coatings by DC reactive magnetron sputtering is more readily performed and better controlled than in ion nitriding. PVD results in macroscopically smoother AlN films and with similar thickness than the ion nitrided layers but produced in shorter processing times. The morphology of the PVD AlN layers is columnar with a fairly flat surface. Mechanisms for the formation of both types of AlN layers are proposed. One of the main differences between the two processes that explain the different AlN layer morphologies is the energy of the particles that arrive at the substrate. Considering only the processing advantages and the morphology of the AlN layers formed, PVD performs better than PAN processing

  8. Ion temperature profiles in JET

    International Nuclear Information System (INIS)

    Hellermann, M. von; Mandl, W.; Summers, H.P.; Weisen, H.

    1989-01-01

    The results presented in this paper have shown some extreme cases of ion temperature profiles illustrating the different operation modes of the JET tokamak. In the three examples of low-density high temperature, high-density moderates and high-density high-confinement plasmas comparable values of a maximum fusion product n d T i τ E in the order of 10 20 keV m -3 sec are achieved. (author) 1 ref., 7 figs

  9. Carbon dioxide ion implantation in Titanium Nitride (Ti N)

    International Nuclear Information System (INIS)

    Torabi, Sh.; Sari, A. H.; Hojabri, A.; Ghoranneviss, M.

    2007-01-01

    Nitrogen ion implantation on titanium samples performed at 3x10 18 , 8x10 17 , 3x10 18 doses. In addition CO 2 ions were also implanted at doses in the range of 1x10 17 ,4 x10 17 ,8x10 17 . Atomic Force Microscopy, used to investigate the topographical changes of implanted samples. The structure of samples and phase composition were characterized using x-ray diffraction. The results show that by increasing of nitrogen ions, the roughness, grain sizes and hardness will increase. But by further increasing of dose, hardness will be decreased. The CO 2 implantation also enhance the roughness, grain size and hardness which could be caused by phase composition.

  10. Hydrogen permeation modification of 4140 steel by ion nitriding with pulsed plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Bruzzoni, P.; Ortiz, M. [Comision Nacional de Energia Atomica, Buenos Aires (Argentina); Bruehl, S.P.; Gomez, B.J.A.; Feugeas, J.N. [Inst. de Fisica Rosario (UNR-CONICET), Rosario (Argentina); Nosei, L. [Inst. de Mecanica Aplicada y Estructuras (UNR), Rosario (Argentina)

    1998-11-10

    It is widely known that the hydrogen in steel produces embrittlement. This effect may cause the failure of the elements (confining walls, mechanical parts, etc.) whose surfaces are in contact with this gas or with processes in which hydrogen is continuously generated. In this work it is shown that the ion nitriding of the surface of AISI 4140 is a good mechanism to act as a barrier against hydrogen permeation in its bulk. The ion nitriding was performed using a square wave DC glow discharge. The development of a compound layer of iron nitrides was observed as the cause of the hydrogen permeation reduction. For equal duration of treatment, thicker compound layers were developed in higher discharge/post-discharge ratios in the square wave of the applied voltage onto the sample (cathode), with a greater reduction of hydrogen permeation coefficient as a consequence. Nevertheless, the permeation was not reduced to zero in any of the treatment conditions used. The results of the analysis of the permeation tests and the image of the photomicrographs showed that the existence of cracks, fractures, failures, etc. in the compound layer (pre-existing in the AISI 4140 steel) could be the cause of the residual hydrogen permeation. This can be attributed to the movement of the hydrogen through these defects diffusing through the original {alpha}-Fe phase of the non-treated steel. (orig.) 11 refs.

  11. Fatigue improvement in low temperature plasma nitrided Ti–6Al–4V alloy

    Energy Technology Data Exchange (ETDEWEB)

    Farokhzadeh, K.; Edrisy, A., E-mail: edrisy@uwindsor.ca

    2015-01-03

    In this study a low temperature (600 °C) treatment was utilized to improve the fatigue performance of plasma nitrided Ti–6Al–4V alloy by optimization of microstructure. In order to study the fatigue properties, rotation bending tests were conducted, the S–N curves were constructed, and the results were compared with those obtained by an elevated temperature treatment (900 °C) as well as conventional gas/plasma nitriding treatments reported in literature. The plasma nitrided alloy at 600 °C showed an endurance limit of 552 MPa which was higher than those achieved by conventional nitriding treatments performed at 750–1100 °C. In contrast, plasma nitriding at 900 °C resulted in the reduction of fatigue life by at least two orders of magnitude compared to the 600 °C treatment, accompanied by a 13% reduction of tensile strength and a 78% reduction of ductility. The deterioration of mechanical properties after the elevated temperature treatment was attributed to the formation of a thick compound layer (∼6 µm) on the surface followed by an α-Case (∼20 µm) and phase transformation in the bulk microstructure from fully equiaxed to bimodal with coarse grains (∼5 times higher average grain size value). The microstructure developed at 600 °C consisted of a thin compound layer (<2 µm) and a deep nitrogen diffusion zone (∼45 µm) while the bulk microstructure was maintained with only 40% grain growth. The micromechanisms of fatigue failures were identified by examination of the fracture surfaces under a scanning electron microscope (SEM). It was found that fatigue failure in the plasma nitrided alloy initiated from the surface in the low cycle region (N≤10{sup 5} cycles) and propagated in a ductile manner leading to the final rupture. No failures were observed in the high cycle region (N>10{sup 5} cycles) and the nitrided alloy endured cyclic loading until the tests were stopped at 10{sup 7} cycles. The thin morphology of the compound layer in this

  12. Fatigue improvement in low temperature plasma nitrided Ti–6Al–4V alloy

    International Nuclear Information System (INIS)

    Farokhzadeh, K.; Edrisy, A.

    2015-01-01

    In this study a low temperature (600 °C) treatment was utilized to improve the fatigue performance of plasma nitrided Ti–6Al–4V alloy by optimization of microstructure. In order to study the fatigue properties, rotation bending tests were conducted, the S–N curves were constructed, and the results were compared with those obtained by an elevated temperature treatment (900 °C) as well as conventional gas/plasma nitriding treatments reported in literature. The plasma nitrided alloy at 600 °C showed an endurance limit of 552 MPa which was higher than those achieved by conventional nitriding treatments performed at 750–1100 °C. In contrast, plasma nitriding at 900 °C resulted in the reduction of fatigue life by at least two orders of magnitude compared to the 600 °C treatment, accompanied by a 13% reduction of tensile strength and a 78% reduction of ductility. The deterioration of mechanical properties after the elevated temperature treatment was attributed to the formation of a thick compound layer (∼6 µm) on the surface followed by an α-Case (∼20 µm) and phase transformation in the bulk microstructure from fully equiaxed to bimodal with coarse grains (∼5 times higher average grain size value). The microstructure developed at 600 °C consisted of a thin compound layer (<2 µm) and a deep nitrogen diffusion zone (∼45 µm) while the bulk microstructure was maintained with only 40% grain growth. The micromechanisms of fatigue failures were identified by examination of the fracture surfaces under a scanning electron microscope (SEM). It was found that fatigue failure in the plasma nitrided alloy initiated from the surface in the low cycle region (N≤10 5 cycles) and propagated in a ductile manner leading to the final rupture. No failures were observed in the high cycle region (N>10 5 cycles) and the nitrided alloy endured cyclic loading until the tests were stopped at 10 7 cycles. The thin morphology of the compound layer in this study restricted

  13. Nitriding of AISI 4140 steel by a low energy broad ion source

    International Nuclear Information System (INIS)

    Ochoa, E. A.; Figueroa, C. A.; Alvarez, F.

    2006-01-01

    A comprehensive study of the thermochemical nitriding process of steel AISI 4140 by low energy ion implantation (Kaufmann cell) is reported. Different times of implantation were employed and the studied samples were characterized by x-ray diffraction, in situ photoemission electron spectroscopy, scanning electron microscopy, and hardness (nanoindentation) measurements. The linear relationship between nitrogen content and hardness was verified. The structure of the nitrided layer was characterized yielding that the compound layer is formed by coarse precipitates, around small grains, constituted principally by ε-Fe 2-3 N and γ-Fe 4 N phases and the diffusion zone is formed by fine precipitates, around big grains of the original martensitic phase, constituted principally by γ-Fe 4 N phase. Finally, a diffusion model for multiphase systems was applied to determine effective diffusion coefficients of nitrogen in the different phases

  14. Influence of plastic deformation on low temperature surface hardening of stainless steel by gaseous nitriding

    DEFF Research Database (Denmark)

    Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

    2015-01-01

    This article addresses an investigation of the influence of plastic deformation on low temperature surface hardening by gaseous nitriding of three commercial austenitic stainless steels: AISI 304, EN 1.4369 and Sandvik Nanoflex® with various degrees of austenite stability. The materials were...... analysis, reflected light microscopy and microhardness indentation. The results demonstrate that a case of expanded austenite develops and that, in particular, the presence of strain-induced martensite in the initial (deformed) microstructure has a large influence on the nitrided zone....

  15. Erosion-corrosion resistance properties of 316L austenitic stainless steels after low-temperature liquid nitriding

    Science.gov (United States)

    Zhang, Xiangfeng; Wang, Jun; Fan, Hongyuan; Pan, Dong

    2018-05-01

    The low-temperature liquid nitriding of stainless steels can result in the formation of a surface zone of so-called expanded austenite (S-phase) by the dissolution of large amounts of nitrogen in the solid solution and formation of a precipitate-free layer supersaturated with high hardness. Erosion-corrosion measurements were performed on low-temperature nitrided and non-nitrided 316L stainless steels. The total erosion-corrosion, erosion-only, and corrosion-only wastages were measured directly. As expected, it was shown that low-temperature nitriding dramatically reduces the degree of erosion-corrosion in stainless steels, caused by the impingement of particles in a corrosive medium. The nitrided 316L stainless steels exhibited an improvement of almost 84% in the erosion-corrosion resistance compared to their non-nitrided counterparts. The erosion-only rates and synergistic levels showed a general decline after low-temperature nitriding. Low-temperature liquid nitriding can not only reduce the weight loss due to erosion but also significantly reduce the weight loss rate of interactions, so that the total loss of material decreased evidently. Therefore, 316L stainless steels displayed excellent erosion-corrosion behaviors as a consequence of their highly favorable corrosion resistances and superior wear properties.

  16. Corrosion resistance of a magnetic stainless steel ion-plated with titanium nitride.

    Science.gov (United States)

    Hai, K; Sawase, T; Matsumura, H; Atsuta, M; Baba, K; Hatada, R

    2000-04-01

    This in vitro study evaluated the corrosion resistance of a titanium nitride (TiN) ion-plated magnetic stainless steel (447J1) for the purpose of applying a magnetic attachment system to implant-supported prostheses made of titanium. The surface hardness of the TiN ion-plated 447J1 alloy with varying TiN thickness was determined prior to the corrosion testing, and 2 micrometers thickness was confirmed to be appropriate. Ions released from the 447J1 alloy, TiN ion-plated 447J1 alloy, and titanium into a 2% lactic acid aqueous solution and 0.1 mol/L phosphate buffered saline (PBS) were determined by means of an inductively coupled plasma atomic emission spectroscopy (ICP-AES). Long-term corrosion behaviour was evaluated using a multisweep cyclic voltammetry. The ICP-AES results revealed that the 447J1 alloy released ferric ions into both media, and that the amount of released ions increased when the alloy was coupled with titanium. Although both titanium and the TiN-plated 447J1 alloy released titanium ions into lactic acid solution, ferric and chromium ions were not released from the alloy specimen for all conditions. Cyclic voltamograms indicated that the long-term corrosion resistance of the 447J1 alloy was considerably improved by ion-plating with TiN.

  17. Nitrogen transport during ion nitriding of austenitic stainless steel

    International Nuclear Information System (INIS)

    Parascandola, S.

    2001-09-01

    The work is structured as follows: In Chapter 2 fundamental transport concepts and phenomena and approaches to transport modeling are introduced. In Chapter 3 details are presented concerning the material under investigation, the material modification process, and the ion beam analytical techniques. In Chapter 4 experimental and modeling results are presented and discussed. Issues that are directly addressed include: The structural nature of the nitrogen enriched layer. The diffusion mechanism of nitrogen. The role of potential incorporation and release mechanisms. The evolution of the thickness of the nitrogen enriched layer. The role of the surface oxide layer. (orig.)

  18. Mechanisms of hydrogen retention in metallic beryllium and beryllium oxide and properties of ion-induced beryllium nitride

    International Nuclear Information System (INIS)

    Oberkofler, Martin

    2011-01-01

    In the framework of this thesis laboratory experiments on atomically clean beryllium surfaces were performed. They aim at a basic understanding of the mechanisms occurring upon interaction of a fusion plasma with a beryllium first wall. The retention and the temperature dependent release of implanted deuterium ions are investigated. An atomistic description is developed through simulations and through the comparison with calculations based on density functional theory. The results of these investigations are compared to the behaviour of hydrogen upon implantation into thermally grown beryllium oxide layers. Furthermore, beryllium nitride is produced by implantation of nitrogen into metallic beryllium and its properties are investigated. The results are interpreted with regard to the use of beryllium in a fusion reactor. (orig.)

  19. Some Temperature Effects on AISI-304 Nitriding in an Inductively Coupled RF Plasma

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R.; Barocio, S. R.; Mercado-Cabrera, A.; Pena-Eguiluz, R.; Munoz-Castro, A. E.; Piedad-Beneitez, A. de la; Rosa-Vazquez, J. de la; Lopez-Callejas, R.; Godoy-Cabrera, O. G.

    2006-01-01

    Some recent results obtained from nitriding AISI 304 stainless steel samples, 1.2 cm in diameter and 0.5 cm thick are reported here in the case of an 85% hydrogen and 15% nitrogen mixture work gas. The process was carried out from 300 to 400 W for (13.56 MHz) inductively coupled plasma within a 60 cm long pyrex glass tube 3.5 cm in diameter where the samples were biased up to -300 V with respect to earth. The resulting hardness appears to be a function of the substrate temperature which varied from 200 deg. C at a 0 V bias to 550 deg. C at -300 V. The plasma density at 400 W reached 3x1010 cm-3 with a 4 eV electron temperature. Prior to nitriding, all the samples were polished with 0.05 μm diamond paste, leading to a 30 nm average roughness (Ra). After nitriding at -300 V, the Ra rose until ∼400 nm while hardness values of 1500 HV under 300 g loads were measured. X ray diffraction indicates that the extended phase amplitude (γN), Fe and Cr nitride depends on the substrate temperature

  20. Feasibility study of Boron Nitride coating on Lithium-ion battery casing

    International Nuclear Information System (INIS)

    Saw, L.H.; Ye, Y.; Tay, A.A.O.

    2014-01-01

    Increasing in public awareness about global warming and exhaustion of energy resources has led to a flourishing electric vehicle industry that would help realize a zero-emission society. The thermal management of battery packs, which is an essential issue closely linked to a number of challenges for electric vehicles including cost, safety, reliability and lifetime, has been extensively studied. However, relatively little is known about the thermal effect of polymer insulation on the Lithium-ion battery casing. This study investigates the feasibility of replacing the polymer insulation with a Boron Nitride coating on the battery casing using the Taguchi experimental method. The effect of casing surface roughness, coating thickness and their interaction were examined using orthogonal array L 9 (3 4 ). Nominal the best is chosen for the optimization process to achieve optimum adhesion strength. In addition, the thermal improvements of the coating as compared to conventional polymer insulator on the battery are further investigated. - Highlights: • We studied the Boron Nitride coating on battery casing using Taguchi method. • We investigated the effect of surface roughness and coating thickness on adhesion strength. • We compared the effect of coating and polymer insulator in heat transfer. • The Boron Nitride coating could enhance the thermal management of the battery

  1. Chemical synthesis of hexagonal indium nitride nanocrystallines at low temperature

    Science.gov (United States)

    Wang, Liangbiao; Shen, Qianli; Zhao, Dejian; Lu, Juanjuan; Liu, Weiqiao; Zhang, Junhao; Bao, Keyan; Zhou, Quanfa

    2017-08-01

    In this study, hexagonal indium nitride nanocystallines with high crystallinity have been prepared by the reaction of InCl3·4H2O, sulfur and NaNH2 in an autoclave at 160 °C. The crystal structures and morphologies of the obtained InN sample are characterized by X-ray diffraction and scanning electron microscope. As InCl3·4H2O is substituted by In(NO3)3·4.5H2O, InN nanocrystallines could also be obtained by using the similar method. The photoluminescence spectrum shows that the InN emits a broad peak positioned at 2.3 eV.

  2. Deposition of carbon nitride films by vacuum ion diode with explosive emission

    Energy Technology Data Exchange (ETDEWEB)

    Korenev, S.A.; Perry, A.J. [New Jersey Inst. of Tech., Newark (United States); Elkind, A.; Kalmukov, A.

    1997-10-31

    Carbon nitride films were synthesized using a novel technique based on the pulsed high voltage ion/electron diode with explosive emission (pulsed voltage 200-700 kV pulsed current 100-500 Acm{sup -2} (ions) 150-2000 Acm{sup -2} (electrons)). The method and its novel features are discussed as well as its application to the formation of the crystalline {beta}-phase in C{sub 3}N{sub 4} films. Mixed elemental nitrogen and carbon films are formed by sequential deposition then subjected to ion and/or electron beam mixing to synthesize the C{sub 3}N{sub 4} structure. The experimental conditions used for this pulsed process are described and the efficiency of the method for nitrogen incorporation is demonstrated. The results presented indicate that {beta}-C{sub 3}N{sub 4} crystallites are formed in an amorphous matrix. (orig.) 20 refs.

  3. Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

    Science.gov (United States)

    Lee, Hae-Min; Jeong, Gyoung Hwa; Kim, Sang-Wook; Kim, Chang-Koo

    2017-04-01

    Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2-5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

  4. High temperature solution-nitriding and low-temperature nitriding of AISI 316: Effect on pitting potential and crevice corrosion performance

    DEFF Research Database (Denmark)

    Bottoli, Federico; Jellesen, Morten Stendahl; Christiansen, Thomas Lundin

    2018-01-01

    in a 0.1M NaCl solution and crevice corrosion immersion tests in 3wt% FeCl3 solution were studied before and after the bulk and surface treatments.Nitrogen addition in the bulk proved to have a beneficial effect on the pitting resistance of the alloy. The formation of a zone of expanded austenite...... at the material surface through low-temperature nitriding resulted in a considerable improvement of the pitting potential and the crevice corrosion performance of the steels....

  5. Mechanical and tribological properties of silicon nitride films synthesized by ion beam enhanced deposition

    International Nuclear Information System (INIS)

    Chen Yuanru; Li Shizhuo; Zhang Xushou; Liu Hong; Yang Genqing; Qu Baochun

    1991-01-01

    This article describes preliminary investigations of mechanical and tribological properties of silicon nitride film formed by ion beam enhanced deposition (IBED) on GH37 (Ni-based alloys) steel. The films were synthesized by silicon vapor deposition with a rate of 1 A/s and by 40 keV nitrogen ion bombardment simultaneously. The thickness of the film was about 5000 A. X-ray photoelectron spectroscopy and infrared absorption spectroscopy revealed that a stoichiometric Si 3 N 4 film was formed. The observation of TEM showed that the IBED Si 3 N 4 film normally had an amorphous structure. However, electron diffraction patterns revealed a certain crystallinity. The mechanical and tribological properties of the films were investigated with a scratch tester, microhardness meter, and a ball-on-disc tribometer respectively. Results show that the adhesive strength between film and substrate is about 51 N, the Vickers microhardness with a load of 0.2 N is 980, the friction coefficient measured for steel against silicon nitride film ranges from 0.1 to 0.15, and the wear rate of coatings is about 6.8x10 -5 mm 3 /(mN). Finally, the relationship among thermal annealing, crystallinity and tribological characteristics of the Si 3 N 4 film is discussed. (orig.)

  6. The Influence of Hot-Rolled Temperature on Plasma Nitriding Behavior of Iron-Based Alloys

    Science.gov (United States)

    El-Hossary, F. M.; Khalil, S. M.; Lotfy, Kh.; Kassem, M. A.

    2009-07-01

    Experiments were performed with an aim of studying the effect of hot-rolled temperature (600 and 900°C) on radio frequency (rf) plasma nitriding of Fe93Ni4Zr3 alloy. Nitriding was carried out for 10 min in a nitrogen atmosphere at a base pressure of 10-2 mbarr. Different continuous plasma processing powers of 300-550 W in steps 50 W or less were applied. Nitrided hot-rolled specimens were characterized by optical microscopy (OM), X-ray diffraction (XRD) and microhardness measurements. The results reveal that the surface of hot-rolled rf plasma nitrided specimens at 600°C is characterized with a fine microstructure as a result of the high nitrogen solubility and diffusivity. Moreover, the hot-rolled treated samples at 600°C exhibit higher microhardness value than the associated values of hot-rolled treated samples at 900°C. The enhancement of microhardness is due to precipitation and predominance of new phases ( γ and ɛ phases). Mainly, this conclusion has been attributed to the high defect densities and small grain sizes of the samples hot-rolled at 600°C. Generally, the refinement of grain size plays a dramatic role in improvement of mechanical properties of tested samples.

  7. Magnesium nitride phase formation by means of ion beam implantation technique

    International Nuclear Information System (INIS)

    Hoeche, Daniel; Blawert, Carsten; Cavellier, Matthieu; Busardo, Denis; Gloriant, Thierry

    2011-01-01

    Nitrogen implantation technique (Hardion + ) has been applied in order to modify the surface properties of magnesium and Mg-based alloys (AM50, AZ31). Nitrogen ions with an energy of approximately 100 keV were used to form the Mg 3 N 2 phase leading to improved surface properties. The samples were investigated using various characterization methods. Mechanical properties have been tested by means of nanoindention, the electrochemical behavior was measured by potentiodynamic polarization and impedance spectroscopy, phase formation by using grazing incidence Xray diffraction, the chemical state was determined by means of Xray induced photoelectron spectroscopy (XPS) and depth profiling by using secondary ions mass spectroscopy (SIMS). Additionally, the results were compared to calculated depth profiles using SRIM2008. The correlation of the results shows the nitride formation behavior to a depth of about 600 nm.

  8. Influence of surface mechanical activation of the X40Cr13 steel on roughness after ion and gas nitriding

    International Nuclear Information System (INIS)

    Jasinski, J.; Wojtal, A.; Jeziorski, L.; Radecki, A.; Ucieklak, S.

    2003-01-01

    The article describes the problem of the thermal and mechanical activation of the surface of the X40Cr13 steel on the state of the ion and gas nitriding. in order to determine the nitriding influence and make the analysis of results, the steel was subjected to: soft annealing, hardening with subsequent tempering at T = 550 o C and also mechanical activation of the surface consisting in peripheral grinding with abrasive papers of the grain size 60, 360, 1000 and mechanical polishing. The main aim of this work was to establish the influence of different surface geometrical structure, depending on X40Cr13 steel structure, on the roughness profile after ion and gas nitriding. With regard to the above, the examinations of basic roughness parameters prior to and after thermochemical processes and the analysis of utilitarian usefulness of activations applied were carried out. (author)

  9. Measurement of ion species produced due to bombardment of 450 eV N{sub 2}{sup +} ions with hydrocarbons-covered surface of tungsten: Formation of tungsten nitride

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Bhatt, P. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, A. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Singh, B.K.; Singh, B.; Prajapati, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Shanker, R., E-mail: shankerorama@gmail.com [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India)

    2016-08-01

    A laboratory experiment has been performed to study the ions that are produced due to collisions of 450 eV N{sub 2}{sup +} ions with a hydrocarbons-covered surface of polycrystalline tungsten at room temperature. Using a TOF mass spectrometry technique, the product ions formed in these collisions have been detected, identified and analyzed. Different ion–surface reaction processes, namely, neutralization, reflection, surface induced dissociation, surface induced chemical reactions and desorption are observed and discussed. Apart from the presence of desorbed aliphatic hydrocarbon and other ions, the mass spectra obtained from the considered collisions show the formation and sputtering of tungsten nitride (WN). A layer of WN on tungsten surface is known to decrease the sputtering of bulk tungsten in fusion devices more effectively than when the tungsten is bombarded with other seeding gases (He, Ar). It is further noted that there is a negligible diffusion of N in the bulk tungsten at room temperature.

  10. Strength evaluation test of pressureless-sintered silicon nitride at room temperature

    Science.gov (United States)

    Matsusue, K.; Takahara, K.; Hashimoto, R.

    1984-01-01

    In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

  11. The stopping power and energy straggling of heavy ions in silicon nitride and polypropylene

    Energy Technology Data Exchange (ETDEWEB)

    Mikšová, R., E-mail: miksova@ujf.cas.cz [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Department of Physics, Faculty of Science, J. E. Purkinje University, Ceske Mladeze 8, 400 96 Usti nad Labem (Czech Republic); Hnatowicz, V. [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Macková, A.; Malinský, P. [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Department of Physics, Faculty of Science, J. E. Purkinje University, Ceske Mladeze 8, 400 96 Usti nad Labem (Czech Republic); Slepička, P. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2015-07-01

    The stopping power and energy straggling of {sup 12}C{sup 3+} and {sup 16}O{sup 3+} ions with energies between 4.5 and 7.8 MeV in a 0.166-μm-thin silicon nitride and in 4-μm-thin polypropylene foils were measured by means of an indirect transmission method using a half-covered PIPS detector. Ions scattered from a thin gold layer under a scattering angle of 150° were used. The energy spectra of back-scattered and decelerated ions were registered and evaluated simultaneously. The measured stopping powers were compared with the theoretical predictions simulated by SRIM-2008 and MSTAR codes. SRIM prediction of energy stopping is reasonably close to the experimentally obtained values comparing to MSTAR values. Better agreement between experimental and predicted data was observed for C{sup 3+} ion energy losses comparing to O{sup 3+} ions. The experimental data from Paul’s database and our previous experimental data were also discussed. The obtained experimental energy-straggling data were compared to those calculated by using Bohr’s, Yang’s models etc. The predictions by Yang are in good agreement with our experiment within a frame of uncertainty of 25%.

  12. The stopping power and energy straggling of heavy ions in silicon nitride and polypropylene

    International Nuclear Information System (INIS)

    Mikšová, R.; Hnatowicz, V.; Macková, A.; Malinský, P.; Slepička, P.

    2015-01-01

    The stopping power and energy straggling of 12 C 3+ and 16 O 3+ ions with energies between 4.5 and 7.8 MeV in a 0.166-μm-thin silicon nitride and in 4-μm-thin polypropylene foils were measured by means of an indirect transmission method using a half-covered PIPS detector. Ions scattered from a thin gold layer under a scattering angle of 150° were used. The energy spectra of back-scattered and decelerated ions were registered and evaluated simultaneously. The measured stopping powers were compared with the theoretical predictions simulated by SRIM-2008 and MSTAR codes. SRIM prediction of energy stopping is reasonably close to the experimentally obtained values comparing to MSTAR values. Better agreement between experimental and predicted data was observed for C 3+ ion energy losses comparing to O 3+ ions. The experimental data from Paul’s database and our previous experimental data were also discussed. The obtained experimental energy-straggling data were compared to those calculated by using Bohr’s, Yang’s models etc. The predictions by Yang are in good agreement with our experiment within a frame of uncertainty of 25%

  13. Low-temperature nitriding of austenitic steel in a vibrofluidized bed

    Science.gov (United States)

    Baraz, V. R.; Grachev, S. V.

    1999-11-01

    The prospects for use of a vibrofluidized bed (VFB) for low-temperature nitrogen saturation of high-strength austenitic steel based on Cr-Ni-Mn (12Kh17N8G2S2MF) are considered. The positive effect of preliminary plastic deformation on the intensity of nitriding is described. The temperature and time parameters of nitriding in a VFB for strain-aging austenitic steel 12Kh17N8G2S2MF are shown to be adequate for the regimes of the final heat-treatment operation of aging. This creates the possibility of combining the operations of surface alloying and strain aging into a single cycle. This combined treatment increases substantially the resistance of the steel to cyclic loads while preserving the strength parameters. It is shown that the presented method of low-temperature nitriding in a VFB is expedient for improving the service characteristics of austenitic steel 12Kh17N8G2S2MF used for production of force springs of automobile brake systems.

  14. Characterization Modeling of the Flow Through Ion Gun: Applications to Nitride Processing

    Energy Technology Data Exchange (ETDEWEB)

    Dennis, Darcie [Colorado School of Mines, Golden, CO (United States)

    2003-07-01

    The objective of this work was to characterize the flow through ion gun and verify the results with optimal production of cubic boron nitride thin film coatings. The experimental method involved characterizing the plasma produced by the ion source, calculating the operational capabilities of the ion source, correlating the ion source processing conditions to known deposition conditions for BN films, depositing BN films and characterizing the materials produced. In this manner, an understanding of the source operation and capabilities can be discerned as well as an observation of the unique features of this ion source. The plasma characterization was conducted with the use of a Hiden® Analytical electrostatic quadrupole plasma (EQP) analyzer. The resulting energy spectrum of the selected masses provided information about the population of ionic species present in the plasma during deposition under controlled conditions. Total ion flux was measured using a Faraday cup to correlate the two parameters. Measurements of the total ion flux combined with the information from the EQP were used to calculate the total ion flux of the individual species incident on the substrate during deposition. An oscillating quartz crystal monitor measured the deposition rate which was correlated to the atomic arrival rate at the substrate. Using the combination of this information, a momentum transfer parameter was calculated for optimal processing conditions of BN films using the FTIG. Characterization of the resulting films was challenging due to a number of difficulties with most common analytical techniques. However, XTEM revealed that the FTIG actually oscillates in and out of the necessary conditions for cBN deposition. The films also show non-uniformities, indicating the plasma was not continuously stable during the deposition. The cBN films formed consisted of 10-20 nm grain sizes. Electron diffraction was used to identify cBN crystallites and verify the processing parameters.

  15. Ion nitriding post-oxidation as an alternative technique to electrolytic chromium; Nitruracion post-oxidacion ionica como tecnica alternativa al cromado electrolitico

    Energy Technology Data Exchange (ETDEWEB)

    Diaz-Guillen, J. C.; Granda-Gutierrez, E.E.; Campa-Castilla, A.; Perez-Aguilar, S.I.; Garza-Gomez, A.; Candelas-Ramirez, J.; Mendez-Mendez, R. [COMIMSA. Corporacion Mexicana de Investigacion en Materiales S.A. de C.V., Saltillo, Coahuila (Mexico)]. E-mail: jcarlos@comimsa.com

    2010-11-15

    The effect of temperature and processing time during post-oxidation on hardness and corrosion resistance of AISI 1045 samples treated through nitriding and post-oxidation in a pulsed plasma discharge is evaluated in this paper. Also, a comparative analysis of the mechanical properties obtained with the dual nitriding - post oxidation process versus those properties of typical hard chrome coatings was performed with an aim to propose an alternative technique to the processes of galvanic coatings. The latter revealed that the process of ion nitriding and post-oxidation provides similar properties in hardness and improves the corrosion resistance compared to the hard chrome case. It is conclude that the technique of ion nitriding and post-oxidation is a non environmental harmful technology with strong potential to replace highly polluting electroplating techniques for application of hard chrome coatings. [Spanish] En el presente trabajo se evalua el efecto del tiempo y la temperatura de post-oxidacion sobre las propiedades de dureza y resistencia a la corrosion de muestras de acero AISI 1045 sometido al proceso de nitruracion post-oxidacion ionica en plasmas pulsados. Asi mismo, con el objetivo de fundamentar la propuesta de utilizacion de la nitruracion post-oxidacion ionica como una tecnica alternativa a los procesos galvanicos para aplicacion de recubrimientos de cromo duro, se realizo un analisis comparativo de propiedades, evidenciando que, mediante el proceso nitruracion postoxidacion ionica, es posible obtener caracteristicas similares en dureza y mejores en resistencia a la corrosion que las tipicas obtenidas para el cromo duro. Los resultados obtenidos permiten postular una tecnica que no dana al medio ambiente, como lo es la nitruracion post-oxidacion ionica, como candidata potencial para sustituir las tecnicas galvanicas altamente contaminantes para aplicacion de cromo duro.

  16. Modernization of serial facility 'BULAT-6' for synthesis of vacuum-arc coatings by the method of plasma-based ion implantation and deposition as well as ion hydrogen-free nitriding

    International Nuclear Information System (INIS)

    Shulaev, V.M.; Andreev, A.A.; Rudenko, V.P.

    2008-01-01

    The model of laboratory vacuum-arc facility for realization of the method of plasma-based ion implantation and deposition is worked out by means modernization of serial industrial facility 'BULAT-6'. The facility is suitable for surface modification of instrumental steel items, including the low-alloyed steels with low temperatures of tempering. The low-temperature deposition of coatings on the preliminary nitrided surface of instrument permits obtaining dense coating with minimum maintenance of macroparticles, as well as with coatings superhigh adhesion to the substrate and with superhardness. The coatings possess high property stableness in time.

  17. Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

    2003-06-01

    White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

  18. Low Working-Temperature Acetone Vapor Sensor Based on Zinc Nitride and Oxide Hybrid Composites.

    Science.gov (United States)

    Qu, Fengdong; Yuan, Yao; Guarecuco, Rohiverth; Yang, Minghui

    2016-06-01

    Transition-metal nitride and oxide composites are a significant class of emerging materials that have attracted great interest for their potential in combining the advantages of nitrides and oxides. Here, a novel class of gas sensing materials based on hybrid Zn3 N2 and ZnO composites is presented. The Zn3 N2 /ZnO (ZnNO) composites-based sensor exhibits selectivity and high sensitivity toward acetone vapor, and the sensitivity is dependent on the nitrogen content of the composites. The ZnNO-11.7 described herein possesses a low working temperature of 200 °C. The detection limit (0.07 ppm) is below the diabetes diagnosis threshold (1.8 ppm). In addition, the sensor shows high reproducibility and long-term stability. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. An Amorphous Carbon Nitride Composite Derived from ZIF-8 as Anode Material for Sodium-Ion Batteries.

    Science.gov (United States)

    Fan, Jing-Min; Chen, Jia-Jia; Zhang, Qian; Chen, Bin-Bin; Zang, Jun; Zheng, Ming-Sen; Dong, Quan-Feng

    2015-06-08

    An composite comprising amorphous carbon nitride (ACN) and zinc oxide is derived from ZIF-8 by pyrolysis. The composite is a promising anode material for sodium-ion batteries. The nitrogen content of the ACN composite is as high as 20.4 %, and the bonding state of nitrogen is mostly pyridinic, as determined by X-ray photoelectron spectroscopy (XPS). The composite exhibits an excellent Na(+) storage performance with a reversible capacity of 430 mA h g(-1) and 146 mA h g(-1) at current densities of 83 mA g(-1) and 8.33 A g(-1) , respectively. A specific capacity of 175 mA h g(-1) was maintained after 2000 cycles at 1.67 A g(-1) , with only 0.016 % capacity degradation per cycle. Moreover, an accelerating rate calorimetry (ARC) test demonstrates the excellent thermal stability of the composite, with a low self heating rate and high onset temperature (210 °C). These results shows its promise as a candidate material for high-capacity, high-rate anodes for sodium-ion batteries. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Ion temperature via laser scattering on ion Bernstein waves

    International Nuclear Information System (INIS)

    Wurden, G.A.; Ono, M.; Wong, K.L.

    1981-10-01

    Hydrogen ion temperature has been measured in a warm toroidal plasma with externally launched ion Bernstein waves detected by heterodyne CO 2 laser scattering. Radial scanning of the laser beam allows precise determination of k/sub perpendicular to/ for the finite ion Larmor radius wave (ω approx. less than or equal to 2Ω/sub i/). Knowledge of the magnetic field strength and ion concentration then give a radially resolved ion temperature from the dispersion relation. Probe measurements and Doppler broadening of ArII 4806A give excellent agreement

  1. Irradiation temperature dependence of defect formation of nitrides (A1N and c-BN) during neutron irradiations

    International Nuclear Information System (INIS)

    Atobe, Kozo.; Okada, Moritami; Nakagawa, Masuo

    2000-01-01

    The nitrogen vacancy concentration in the more refractory nitrides (A1N and c-BN) is determined as a function of reactor fluence up to 5.2x10 17 thermal neutrons/cm 2 and a function of the irradiation temperature at 25, 50, 100, 150, 200, 250 K. It is found that there is no remarkable dependence of the defect formation in nitrides on the irradiation temperature. The production of damage in the nitrides is considerably different from that in oxides. From the irradiation experiments using thermal neutron irradiation field, it is suggested in reactor irradiation that the atomic displacements in the nitrides occur predominately from energetic particles of the nuclear reactions with thermal neutrons in addition to the elastic collisions by fast neutron

  2. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    International Nuclear Information System (INIS)

    Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R.; Restrepo-Parra, E.; Arango, P.J.

    2010-01-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T room ), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I D /I G or sp 3 /sp 2 ratio and not by the absolute sp 3 or sp 2 concentration.

  3. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    Energy Technology Data Exchange (ETDEWEB)

    Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia)

    2010-10-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T{sub room}), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 {+-} 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I{sub D}/I{sub G} or sp{sup 3}/sp{sup 2} ratio and not by the absolute sp{sup 3} or sp{sup 2} concentration.

  4. Performance improvement of silicon nitride ball bearings by ion implantation. CRADA final report

    International Nuclear Information System (INIS)

    Williams, J.M.; Miner, J.

    1998-01-01

    The present report summarizes technical results of CRADA No. ORNL 92-128 with the Pratt and Whitney Division of United Technologies Corporation. The stated purpose of the program was to assess the 3effect of ion implantation on the rolling contact performance of engineering silicon nitride bearings, to determine by post-test analyses of the bearings the reasons for improved or reduced performance and the mechanisms of failure, if applicable, and to relate the overall results to basic property changes including but not limited to swelling, hardness, modulus, micromechanical properties, and surface morphology. Forty-two control samples were tested to an intended runout period of 60 h. It was possible to supply only six balls for ion implantation, but an extended test period goal of 150 h was used. The balls were implanted with C-ions at 150 keV to a fluence of 1.1 x 10 17 /cm 2 . The collection of samples had pre-existing defects called C-cracks in the surfaces. As a result, seven of the control samples had severe spalls before reaching the goal of 60 h for an unacceptable failure rate of 0.003/sample-h. None of the ion-implanted samples experienced engineering failure in 150 h of testing. Analytical techniques have been used to characterize ion implantation results, to characterize wear tracks, and to characterize microstructure and impurity content. In possible relation to C-cracks. It is encouraging that ion implantation can mitigate the C-crack failure mode. However, the practical implications are compromised by the fact that bearings with C-cracks would, in no case, be acceptable in engineering practice, as this type of defect was not anticipated when the program was designed. The most important reason for the use of ceramic bearings is energy efficiency

  5. Influence of Plastic Deformation on Low Temperature Surface Hardening of Austenitic and Precipitation Hardening Stainless Steels by Gaseous Nitriding

    DEFF Research Database (Denmark)

    Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

    2015-01-01

    This article addresses an investigation of the influence of plastic deformation on low temperature surface hardening by gaseous nitriding of three commercial austenitic stainless steels: AISI 304, EN 1.4369 and Sandvik Nanoflex® with various degrees of austenite stability. The materials were...... case included X-ray diffraction analysis, reflected light microscopy and microhardness. The results demonstrate that a case of expanded austenite develops and that, in particular, strain-induced martensite has a large influence on the nitrided zone....

  6. On the photon annealing of silicon-implanted gallium-nitride layers

    International Nuclear Information System (INIS)

    Seleznev, B. I.; Moskalev, G. Ya.; Fedorov, D. G.

    2016-01-01

    The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

  7. Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

    Science.gov (United States)

    Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

    2015-10-01

    Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

  8. Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

    International Nuclear Information System (INIS)

    Karim, M.Z.; Cameron, D.C.; Murphy, M.J.; Hashmi, M.S.J.

    1991-01-01

    Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B 2 H 6 ) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH 3 -NH 3 ) which is a crystalline solid at room temperature with a high vapour pressure. The BH 3 -NH 3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm -1 (hexagonal) and 1070 cm -1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

  9. The analysis of ion nitriding and nitrogen ion implantation on tribological properties of steels 33H3MF and 36H3M

    International Nuclear Information System (INIS)

    Zandecki, R.

    1993-01-01

    Surface properties of two kinds of steel 33H3MF and 36H3M have been investigated. Three different methods of steel surface treatment have been used: ion nitriding, nitrogen ion implantation and mixing method being the sum of the first and second ones. The microstructure, microhardness distribution, fatigue strength, friction coefficient and other tribological properties have been measured and compared. 60 refs, 74 figs, 19 tabs

  10. Ion beam modification of sputtered metal nitride thin films: A study of the induced microstructural changes

    International Nuclear Information System (INIS)

    Milosavljevic, M.; Perusko, D.; Popovic, M.; Novakovic, M.

    2008-01-01

    Single CrN and TiN and multilayered AlN/TiN and Al/Ti thin film structures (t = 240-280 nm) deposited on Si were irradiated with 120-200 keV Ar + ions to the fluences ranging from 1 x 10 11 5 to 4 x 10 16 ions/cm 2 . The metallic Al/Ti multilayered structure was also irradiated with high fluence (1- 2 x 10 17 /cm 2 ) nitrogen ions at 200 keV, in order to study interface mixing and formation of nitrides. Single component CrN and TiN thin films were found to grow in the form of a very fine polycrystalline columnar structures. Individual crystal grains were of the order of a few tens of nm in diameter, stretching from the substrate to the surface. After ion irradiation, the layers retain their polycrystalline structure, although the columns become disconnected, the resulting structures consisting of larger grains and nano-particles of the same phase. The implanted samples displayed higher electrical resistivity, presumably due to a higher concentration of point defects and the presence of nano-particles. In Al/Ti and AlN/TiN multilayers irradiated with Ar ions, the as-deposited structures exhibit well-defined, isolated polycrystalline Al and Ti, or AlN and TiN layers, with sharp interfaces. In the metallic system ion irradiation induced interface mixing which progressed with increasing the ion fluence. Mixing was most pronounced at the interfaces that are located around the projected ion range. The multilayered structure was essentially preserved, but the implanted samples exhibit much larger crystal grains. Also, the formation of lamellar columns stretching over a number of individual layers was observed. The AlN/TiN multilayered structures exhibited no measurable interface mixing on Ar irradiation, attributable to the nature of interatomic bonding and to mutual immiscibility of AlN and TiN. High fluence nitrogen ion irradiation of Al/Ti multilayers results in both the introduction of nitrogen into the structures as well as a high level of their intermixing. A

  11. Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Stroescu, H.; Gartner, M.; Anastasescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Fogarassy, Zs. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege Miklos u. 29-33, H-1121 Budapest (Hungary); Mihailescu, N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A., E-mail: szekeres@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Bakalova, S. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania)

    2016-06-30

    Highlights: • Multi-stage pulsed laser deposition of aluminum nitride at different temperatures. • 800 °C seed film boosts the next growth of crystalline structures at lower temperature. • Two-stage deposited AlN samples exhibit randomly oriented wurtzite structures. • Band gap energy values increase with deposition temperature. • Correlation was observed between single- and multi-stage AlN films. - Abstract: We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN “seed” layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4–2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0–5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

  12. Modelling the evolution of composition-and stress-depth profiles in austenitic stainless steels during low-temperature nitriding

    DEFF Research Database (Denmark)

    Jespersen, Freja Nygaard; Hattel, Jesper Henri; Somers, Marcel A. J.

    2016-01-01

    . In the present paper solid mechanics was combined with thermodynamics and diffusion kinetics to simulate the evolution of composition-depth and stress-depth profiles resulting from nitriding. The model takes into account a composition-dependent diffusion coefficient of nitrogen in expanded austenite, short range......Nitriding of stainless steel causes a surface zone of expanded austenite, which improves the wear resistance of the stainless steel while preserving the stainless behaviour. During nitriding huge residual stresses are introduced in the treated zone, arising from the volume expansion...... that accompanies the dissolution of high nitrogen contents in expanded austenite. An intriguing phenomenon during low-temperature nitriding is that the residual stresses evoked by dissolution of nitrogen in the solid state, affect the thermodynamics and the diffusion kinetics of nitrogen dissolution...

  13. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  14. The Influence Of Nitridation Temperature And Time On The Surface Hardness Of AISI 1010 Low Carbon Steels Nitrided By Means Of Plasma Glow Discharge Technique

    International Nuclear Information System (INIS)

    Sujitno, Tjipto; Mujiman, Supardjono

    1996-01-01

    The results of the influence of nitridation temperature and time on the surface hardness of AISI 1010 low carbon steels nitrided by means of plasma glow discharge technique are presented in this paper. The results are the changing of surface hardiness, the changing of surface microstructure and the penetration profile depth. The experiment has been carried out at the temperature 400 o C, 450 o C, 500 o C, 550 o C, 570 o C and 600 o C, whereas the time is 5 minutes, 15 minutes, 40 minutes, 90 minutes and 180 minutes. All the experiments have been carried out at the optimum plasma density condition. The optimum plasma density condition is achieved at the pressure of p = 0.2 torr, when thr gas flow of nitrogen is 0.6 liter/minute and the distance of electrode plate is 4.5 cm. It was found that the optimum hardness of the surface was achieved at the temperature of 570 o C and the time of nitridation was 90 minutes, i.e. 190 KHN

  15. Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions

    International Nuclear Information System (INIS)

    Lin Chenglu; Hemment, P.L.F.; Li Jinhua; Zou Shichang

    1994-01-01

    Aluminium films with a thickness of 7000 A (containing 0.85% copper) were deposited on silicon substrates. 400 keV N 2 + or 350 keV N + ions were implanted into the aluminium films or at the interface between the aluminium and silicon, respectively. Automatic spreading resistance (ASR), Fourier transform infrared spectroscopy (FTIR) and Rutherford backscattering (RBS) and channelling were used to characterize the formation of aluminium nitride and the depth distribution of the Cu impurity in the aluminium films after ion implantation and post-annealing. The formation of a stoichiometric AlN layer with high resistance was evident from ASR, RBS analysis and FTIR measurements by the presence of the absorption band at 650 cm -1 . When the implanted nitrogen is near the interface between the aluminium and silicon, a multilayer structure can be obtained, which consists of aluminium, aluminium nitride and the silicon substrate. Cu, which is a background impurity in the deposited aluminium films, segregated into the synthesised aluminium nitride during high dose nitrogen ion implantation. This is due to irradiation-induced segregation during ion implantation. (orig.)

  16. Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

    International Nuclear Information System (INIS)

    Altun, Ali Ozhan; Jeong, Jun-Ho; Rha, Jong-Joo; Kim, Ki-Don; Lee, Eung-Sug

    2007-01-01

    Cubic boron nitride (c-BN) is one of the hardest known materials (second after diamond). It has a high level of chemical resistance and high UV transmittance. In this study, a stamp for ultra-violet nanoimprint lithography (UV-NIL) was fabricated using a bi-layered BN film deposited on a quartz substrate. Deposition of the BN was done using RF magnetron sputtering. A hexagonal boron nitride (h-BN) layer was deposited for 30 min before c-BN was deposited for 30 min. The thickness of the film was measured as 160 nm. The phase of the c-BN layer was investigated using Fourier transform infrared (FTIR) spectrometry, and it was found that the c-BN layer has a 40% cubic phase. The deposited film was patterned using focused ion beam (FIB) lithography for use as a UV-NIL stamp. Line patterns were fabricated with the line width and line distance set at 150 and 150 nm, respectively. The patterning process was performed by applying different currents to observe the effect of the current value on the pattern profile. The fabricated patterns were investigated using AFM, and it was found that the pattern fabricated by applying a current value of 50 picoamperes (pA) has a better profile with a 65 nm line depth. The UV transmittance of the 160 nm thick film was measured to be 70-86%. The hardness and modulus of the BN was measured to be 12 and 150 GPa, respectively. The water contact angle of the stamp surface was measured at 75 0 . The stamp was applied to UV-NIL without coating with an anti-adhesion layer. Successful imprinting was proved via scanning electron microscope (SEM) images of the imprinted resin

  17. Hall effects on peristalsis of boron nitride-ethylene glycol nanofluid with temperature dependent thermal conductivity

    Science.gov (United States)

    Abbasi, F. M.; Gul, Maimoona; Shehzad, S. A.

    2018-05-01

    Current study provides a comprehensive numerical investigation of the peristaltic transport of boron nitride-ethylene glycol nanofluid through a symmetric channel in presence of magnetic field. Significant effects of Brownian motion and thermophoresis have been included in the energy equation. Hall and Ohmic heating effects are also taken into consideration. Resulting system of non-linear equations is solved numerically using NDSolve in Mathematica. Expressions for velocity, temperature, concentration and streamlines are derived and plotted under the assumption of long wavelength and low Reynolds number. Influence of various parameters on heat and mass transfer rates have been discussed with the help of bar charts.

  18. Formation of nanocrystals embedded in a silicon nitride film at a low temperature ({<=}200 deg. C)

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyoung-Min; Kim, Tae-Hwan [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of); Hong, Wan-Shick [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of)], E-mail: wshong@uos.ac.kr

    2008-12-15

    Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH{sub 4}, NH{sub 3} and H{sub 2} was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H{sub 2}/SiH{sub 4} mixture ratio that was higher than four.

  19. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    KAUST Repository

    Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; Margalith, T.; Lee, S.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

    2015-01-01

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  20. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    KAUST Repository

    Leonard, J. T.

    2015-07-06

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  1. In situ x-ray diffraction investigations during low energy ion nitriding of austenitic stainless steel grade 1.4571

    International Nuclear Information System (INIS)

    Manova, D; Mändl, S; Gerlach, J W; Hirsch, D; Neumann, H; Rauschenbach, B

    2014-01-01

    Insertion of nitrogen into austenitic stainless steel leads to anomalously fast nitrogen diffusion and the formation of an expanded face-centred cubic phase which is known to contain a large amount of mechanical stress. In situ x-ray diffraction (XRD) measurements during low energy nitrogen ion implantation into steel 316Ti at 300–550 °C allow a direct view into diffusion and phase formation. While the layer growth is directly observable from the decreasing substrate reflection intensity, the time evolution of the intensities for the expanded phase reflection is much more complex: several mechanisms including at least formation and annealing of defects, twinning, reduction of the crystal symmetry, or grain rotation may be active inside the expanded phase, besides the thermally activated decay of the metastable expanded phase. This locally varying coherence length or scattering intensity from the expanded phase is furthermore a function of temperature and time, additionally complicating the deconvolution of XRD spectra for stress and concentration gradients. As no concise modelling of this coherence length is possible at present, a simple qualitative model assuming a dependence of the scattering intensity on the depth, influence by stress and plastic flow during the nitriding process is proposed for understanding the underlying processes. (paper)

  2. Young's modulus and fracture toughness of silicon nitride ceramics at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Rouxel, T. [Rennes Univ. (France). Lab. de Recherche en Mecanique Applicee

    2002-07-01

    The temperature dependencies of Young's modulus (E) and fracture toughness (K{sub 1c}) of several silicon nitride-based monolithic and composite materials, are reviewed. A transition range is observed between 1130 and 1180 C on the E(T) curves, which is systematically 150 to 200 C above the T{sub g} of oxynitride glasses of composition close to that of the intergranular glassy pockets. It is thus supposed that this transition reflects the behaviour of the interfacial glassy films. The higher the glassy phase content, the higher is the temperature sensitivity. The presence of SiC particles greatly attenuates the sensitivity. Thus, Young's modulus decreases more slowly with temperature and fracture toughness changes little up to 1300 C. The K{sub 1c} (T) curves exhibit four different stages which are discussed and interpreted on the basis of a theoretical model. (orig.)

  3. Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface

    International Nuclear Information System (INIS)

    Park, Young-Bae; Rhee, Shi-Woo

    2001-01-01

    Microstructure and initial growth characteristics of the hydrogenated microcrystalline Si (μc-Si:H) films grown on hydrogenated amorphous silicon nitride (a-SiN x :H) surface at low temperature were investigated using high resolution transmission electron microscope and micro-Raman spectroscopy. With increasing the Si and Si - H contents in the SiN x :H surfaces, μc-Si crystallites, a few nanometers in size, were directly grown on amorphous nitride surfaces. It is believed that the crystallites were grown through the nucleation and phase transition from amorphous to crystal in a hydrogen-rich ambient of gas phase and growing surface. The crystallite growth characteristics on the dielectric surface were dependent on the stoichiometric (x=N/Si) ratio corresponding hydrogen bond configuration of the SiN x :H surface. Surface facetting and anisotropic growth of the Si crystallites resulted from the different growth rate on the different lattice planes of Si. No twins and stacking faults were observed in the (111) lattice planes of the Si crystallites surrounding the a-Si matrix. This atomic-scale structure was considered to be the characteristic of the low temperature crystallization of the μc-Si:H by the strain relaxation of crystallites in the a-Si:H matrix. [copyright] 2001 American Institute of Physics

  4. Ion temperature measurements in the Maryland Spheromak

    International Nuclear Information System (INIS)

    Gauvreau, J.L.

    1992-01-01

    Initial spectroscopic data from MS showed evidence of ion heating as deduced from the line widths of different ion species. Detailed measurements of OIV spectral emission line profiles in space and time revealed that heating takes place at early time, before spheromak formation and is occurring within the current discharge. The measured ion temperature is several times the electron temperature and cannot be explained by classical (Spitzer) resistivity. Classically, ions are expected to have lower temperatures than the electrons and therefore, lower temperatures than observed. High ion temperatures have been observed in different RFP's and Spheromaks but are usually associated with relaxation to the Taylor state and occur in the sustainment phase. During formation, the current delivered to start the discharge is not axisymmetric and as a consequence, X-points appear in the magnetic flux. A two dimensional analysis predicts that magnetic reconnection occurring at an X-point can give rise to high ion heating rates. A simple 0-dimensional calculation showed that within the first 20 μs, a conversion of mass flow kinetic energy into ion temperature could take place due to viscosity

  5. Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

    International Nuclear Information System (INIS)

    Kioupakis, Emmanouil; Yan, Qimin; Steiauf, Daniel; Van de Walle, Chris G

    2013-01-01

    Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their performance at high power is affected by the efficiency-droop problem. Previous experimental and theoretical work has identified Auger recombination, a three-particle nonradiative carrier recombination mechanism, as the likely cause of the droop. In this work, we use first-principles calculations to elucidate the dependence of the radiative and Auger recombination rates on temperature, carrier density and quantum-well confinement. Our calculated data for the temperature dependence of the recombination coefficients are in good agreement with experiment and provide further validation on the role of Auger recombination in the efficiency reduction. Polarization fields and phase-space filling negatively impact device efficiency because they increase the operating carrier density at a given current density and increase the fraction of carriers lost to Auger recombination. (paper)

  6. XPS analysis for cubic boron nitride crystal synthesized under high pressure and high temperature using Li3N as catalysis

    International Nuclear Information System (INIS)

    Guo, Xiaofei; Xu, Bin; Zhang, Wen; Cai, Zhichao; Wen, Zhenxing

    2014-01-01

    Highlights: • The cBN was synthesized by Li 3 N as catalyst under high pressure and high temperature (HPHT). • The film coated on the as-grown cBN crystals was studied by XPS. • The electronic structure variation in the film was investigated. • The growth mechanism of cubic boron nitride crystal was analyzed briefly. - Abstract: Cubic boron nitride (cBN) single crystals are synthesized with lithium nitride (Li3N) as catalyst under high pressure and high temperature. The variation of electronic structures from boron nitride of different layers in coating film on the cBN single crystal has been investigated by X-ray photoelectron spectroscopy. Combining the atomic concentration analysis, it was shown that from the film/cBN crystal interface to the inner, the sp 2 fractions are decreasing, and the sp 3 fractions are increasing in the film at the same time. Moreover, by transmission electron microscopy, a lot of cBN microparticles are found in the interface. For there is no Li 3 N in the film, it is possible that Li 3 N first reacts with hexagonal boron nitride to produce Li 3 BN 2 during cBN crystals synthesis under high pressure and high temperature (HPHT). Boron and nitrogen atoms, required for cBN crystals growth, could come from the direct conversion from hexagonal boron nitride with the catalysis of Li 3 BN 2 under high pressure and high temperature, but not directly from the decomposition of Li 3 BN 2

  7. Predicting Microstructure Development During HighTemperature Nitriding of Martensitic Stainless SteelsUsing Thermodynamic Modeling

    Directory of Open Access Journals (Sweden)

    Tschiptschin André Paulo

    2002-01-01

    Full Text Available Thermodynamic calculations of the Fe-Cr-N System in the region of the Gas Phase Equilibria have been compared with experimental results of maximum nitrogen absorption during nitriding of two Martensitic Stainless Steels (a 6 mm thick sheet of AISI 410S steel and green powder compacts of AISI 434L steel under N2 atmospheres. The calculations have been performed combining the Fe-Cr-N System description contained in the SGTE Solid Solution Database and the gas phase for the N System contained in the SGTE Substances Database. Results show a rather good agreement for total nitrogen absorption in the steel and nitrogen solubility in austenite in the range of temperatures between 1273 K and 1473 K and in the range of pressures between 0.1 and 0.36 MPa. Calculations show that an appropriate choice of heat treatment parameters can lead to optimal nitrogen absorption in the alloy. It was observed in the calculations that an increased pressure stabilizes CrN at expenses of Cr2N - type nitrides.

  8. Residual stress in ion implanted titanium nitride studied by parallel beam glancing incidence x-ray diffraction

    International Nuclear Information System (INIS)

    Geist, D.E.; Perry, A.J.; Treglio, J.R.; Valvoda, V.; Rafaja, D.

    1995-01-01

    Ion implantation is known to increase the lifetime of cutting tools. Current theories are the increase in lifetime is caused by an increase in the residual stress, or by work hardening of the surface associated with the implantation. In this work the effect of ion implantation on the residual stress in titanium nitride coatings made by the standard industrial methods of chemical and physical vapor deposition (CVD and PVD) is studied. It is found in the as-received condition (unimplanted), the residual stress levels are near zero for CVD materials and highly compressive, of the order of 6 GPa, for PVD materials. Ion implantation has no effect on the residual stress in the coatings made by CVD. Nitrogen does increase the compressive residual stress by some 10% in the near surface regions of PVD coatings, while nickel-titanium dual metal ion implantation does not have any effect. It appears that the lifetime increase is not associated with residual stress effects

  9. Superconducting structure with layers of niobium nitride and aluminum nitride

    International Nuclear Information System (INIS)

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

  10. Influence of Plastic Deformation on Low-Temperature Surface Hardening of Austenitic Stainless Steel by Gaseous Nitriding

    DEFF Research Database (Denmark)

    Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

    2015-01-01

    This article addresses an investigation of the influence of plastic deformation on low-temperature surface hardening by gaseous nitriding of two commercial stainless steels: EN 1.4369 and AISI 304. The materials were plastically deformed to several levels of equivalent strain by conventional......, reflected-light microscopy, and microhardness testing. The results demonstrate that a case of expanded austenite develops and that the presence of plastic deformation has a significant influence on the morphology of the nitrided case. The presence of strain-induced martensite favors the formation of Cr...

  11. High-temperature thermodynamic activities of zirconium in platinum alloys determined by nitrogen-nitride equilibria

    International Nuclear Information System (INIS)

    Goodman, D.A.

    1980-05-01

    A high-temperature nitrogen-nitride equilibrium apparatus is constructed for the study of alloy thermodynamics to 2300 0 C. Zirconium-platinum alloys are studied by means of the reaction 9ZrN + 11Pt → Zr 9 Pt 11 + 9/2 N 2 . Carful attention is paid to the problems of diffusion-limited reaction and ternary phase formation. The results of this study are and a/sub Zr//sup 1985 0 C/ = 2.4 x 10 -4 in Zr 9 Pt 11 ΔG/sub f 1985 0 C/ 0 Zr 9 Pt 11 less than or equal to -16.6 kcal/g atom. These results are in full accord with the valence bond theory developed by Engel and Brewer; this confirms their prediction of an unusual interaction of these alloys

  12. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  13. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  14. Electrochemical properties of lanthanum nitride with calcium nitride additions

    International Nuclear Information System (INIS)

    Lesunova, R.P.; Fishman, L.S.

    1986-01-01

    This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

  15. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.; Vasiliev, V. K.; Guseinov, D. V.; Okulich, E. V. [Nizhny Novgorod State University (Russian Federation); Shemukhin, A. A. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation); Surodin, S. I.; Nikolitchev, D. E.; Nezhdanov, A. V.; Pirogov, A. V.; Pavlov, D. A.; Tetelbaum, D. I., E-mail: tetelbaum@phys.unn.ru [Nizhny Novgorod State University (Russian Federation)

    2016-02-15

    The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

  16. Radio-frequency plasma nitriding and nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy

    International Nuclear Information System (INIS)

    Wang, S.Y.; Chu, P.K.; Tang, B.Y.; Zeng, X.C.; Wang, X.F.; Chen, Y.B.

    1997-01-01

    Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly developed inductively coupled RF plasma source which is responsible for the success of the experiments is also described. (orig.)

  17. Numerical simulation of ion temperature gradient driven modes in the presence of ion-ion collisions

    International Nuclear Information System (INIS)

    Xu, X.Q.

    1990-08-01

    Ion temperature gradient driven modes in the presence of ion-ion collisions in a toroidal geometry with trapped ions have been studied by using a 1 2/2 d linearized gyro-kinetic particle simulation code in the electrostatic limit. The purpose of the investigation is to try to understand the physics of flat density discharges, in order to test the marginal stability hypothesis. Results giving threshold conditions of L Ti /R 0 , an upper bound on k χ , and linear growth rates and mode frequencies over all wavelengths for the collisionless ion temperature gradient driven modes are obtained. The behavior of ion temperature gradient driven instabilities in the transition from slab to toroidal geometry, with trapped ions, is shown. A Monte Carlo scheme for the inclusion of ion-ion collisions, in which ions can undergo Coulomb collisional dynamical friction, velocity space diffusion and random walk of guiding centers, has been constructed. The effects of ion-ion collisions on the long wave length limit of the ion modes is discussed. 44 refs., 12 figs

  18. Advanced processing of gallium nitride and gallium nitride-based devices: Ultra-high temperature annealing and implantation incorporation

    Science.gov (United States)

    Yu, Haijiang

    This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs. First, the ultra high temperature (around 1500°C) annealing of MOCVD grown GaN on sapphire has been studied, and a thermally induced threading dislocation (TD) motion and reaction are reported. Using a rapid thermal annealing (RTA) approach capable of heating 2 inch wafers to around 1500°C with 100 bar N2 over-pressure, evidence of dislocation motion was first observed in transmission electron microscopy (TEM) micrographs of both planar and patterned GaN films protected by an AIN capping layer. An associated decrease in x-ray rocking curve (XRC) full-width-half-maximum (FWHM) was also observed for both the symmetric and asymmetric scans. After annealing, the AIN capping layer remained intact, and optical measurements showed no degradation of the opto-electronic properties of the films. Then activation annealing of Si implants in MOCVD grown GaN has been studied for use in ohmic contacts. Si was implanted in semi-insulating GaN at 100 keV with doses from 5 x 1014 cm-2 to 1.5 x 1016 cm-2. Rapid thermal annealing at 1500°C with 100 bar N2 over-pressure was used for dopant activation, resulting in a minimum sheet resistance of 13.9 O/square for a dose of 7 x 1015 cm-2. Secondary ion mass spectroscopy measurements showed a post-activation broadening of the dopant concentration peak by 20 nm (at half the maximum), while X-Ray triple axis o-2theta scans indicated nearly complete implant damage recovery. Transfer length method measurements of the resistance of Ti/Al/Ni/Au contacts to activated GaN:Si (5 x 1015 cm-2 at 100 keV) indicated lowest contact resistances of 0.07 Omm and 0.02 Omm for as-deposited and subsequently annealed contacts, respectively. Finally, the incorporation of Si implantation

  19. Preparation of Boron Nitride Nanoparticles with Oxygen Doping and a Study of Their Room-Temperature Ferromagnetism.

    Science.gov (United States)

    Lu, Qing; Zhao, Qi; Yang, Tianye; Zhai, Chengbo; Wang, Dongxue; Zhang, Mingzhe

    2018-04-18

    In this work, oxygen-doped boron nitride nanoparticles with room-temperature ferromagnetism have been synthesized by a new, facile, and efficient method. There are no metal magnetic impurities in the nanoparticles analyzed by X-ray photoelectron spectroscopy. The boron nitride nanoparticles exhibit a parabolic shape with increase in the reaction time. The saturation magnetization value reaches a maximum of 0.2975 emu g -1 at 300 K when the reaction time is 12 h, indicating that the Curie temperature ( T C ) is higher than 300 K. Combined with first-principles calculation, the coupling between B 2p orbital, N 2p orbital, and O 2p orbital in the conduction bands is the main origin of room-temperature ferromagnetism and also proves that the magnetic moment changes according the oxygen-doping content change. Compared with other room temperature ferromagnetic semiconductors, boron nitride nanoparticles have widely potential applications in spintronic devices because of high temperature oxidation resistance and excellent chemical stability.

  20. Temperature-dependent ion beam mixing

    International Nuclear Information System (INIS)

    Rehn, L.E.; Alexander, D.E.

    1993-08-01

    Recent work on enhanced interdiffusion rates during ion-beam mixing at elevated temperatures is reviewed. As discussed previously, expected increase in ion-beam mixing rates due to 'radiation-enhanced diffusion' (RED), i.e. the free migration of isolated vacancy and interstitial defects, is well documented in single-crystal specimens in the range of 0.4 to 0.6 of absolute melting temperature. In contrast, the increase often observed at somewhat lower temperatures during ion-beam mixing of polycrystalline specimens is not well understood. However, sufficient evidence is available to show that this increase reflects intracascade enhancement of a thermally-activated process that also occurs without irradiation. Recent evidence is presented which suggests that this process is Diffusion-induced Grain-Boundary Migration (DIGM). An important complementary conclusion is that because ion-beam mixing in single-crystal specimens exhibits no significant temperature dependence below that of RED, models that invoke only irradiation-specific phenomena, e.g., cascade-overlap, thermal-spikes, or liquid-diffusion, and hence which predict no difference in mixing behavior between single- or poly-crystalline specimens, cannot account for the existing results

  1. High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

    Science.gov (United States)

    Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

  2. Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature

    Science.gov (United States)

    Lv, Meizhe; Xu, Bin; Cai, Lichao; Guo, Xiaofei; Yuan, Xingdong

    2018-05-01

    After rapid cooling, cubic boron nitride (c-BN) single crystals synthesized under high pressure and high temperature (HPHT) are wrapped in the white film powders which are defined as growth interface. In order to make clear that the transition mechanism of c-BN single crystals, the variation of B and N atomic hybrid states in the growth interface is analyzed with the help of auger electron spectroscopy in the Li-based system. It is found that the sp2 fractions of B and N atoms decreases, and their sp3 fractions increases from the outer to the inner in the growth interface. In addition, Lithium nitride (Li3N) are not found in the growth interface by X-ray diffraction (XRD) experiment. It is suggested that lithium boron nitride (Li3BN2) is produced by the reaction of hexagonal boron nitride (h-BN) and Li3N at the first step, and then B and N atoms transform from sp2 into sp3 state with the catalysis of Li3BN2 in c-BN single crystals synthesis process.

  3. Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

    2016-08-15

    Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

  4. The use of aluminum nitride to improve Aluminum-26 Accelerator Mass Spectrometry measurements and production of Radioactive Ion Beams

    Science.gov (United States)

    Janzen, Meghan S.; Galindo-Uribarri, Alfredo; Liu, Yuan; Mills, Gerald D.; Romero-Romero, Elisa; Stracener, Daniel W.

    2015-10-01

    We present results and discuss the use of aluminum nitride as a promising source material for Accelerator Mass Spectrometry (AMS) and Radioactive Ion Beams (RIBs) science applications of 26Al isotopes. The measurement of 26Al in geological samples by AMS is typically conducted on Al2O3 targets. However, Al2O3 is not an ideal source material because it does not form a prolific beam of Al- required for measuring low-levels of 26Al. Multiple samples of aluminum oxide (Al2O3), aluminum nitride (AlN), mixed Al2O3-AlN as well as aluminum fluoride (AlF3) were tested and compared using the ion source test facility and the stable ion beam (SIB) injector platform at the 25-MV tandem electrostatic accelerator at Oak Ridge National Laboratory. Negative ion currents of atomic and molecular aluminum were examined for each source material. It was found that pure AlN targets produced substantially higher beam currents than the other materials and that there was some dependence on the exposure of AlN to air. The applicability of using AlN as a source material for geological samples was explored by preparing quartz samples as Al2O3 and converting them to AlN using a carbothermal reduction technique, which involved reducing the Al2O3 with graphite powder at 1600 °C within a nitrogen atmosphere. The quartz material was successfully converted to AlN. Thus far, AlN proves to be a promising source material and could lead towards increasing the sensitivity of low-level 26Al AMS measurements. The potential of using AlN as a source material for nuclear physics is also very promising by placing 26AlN directly into a source to produce more intense radioactive beams of 26Al.

  5. Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

    Directory of Open Access Journals (Sweden)

    Cristina Besleaga

    2017-11-01

    Full Text Available Aluminum Nitride (AlN has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors. AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate, corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c-axis texturing, deposited at a low temperature (~50 °C on Si (100 substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films for the realization of various type of sensors (with emphasis on bio-sensors is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

  6. Preparation and properties of hexagonal boron nitride fibers used as high temperature membrane filter

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Xinmei, E-mail: houxinmei@ustb.edu.cn; Yu, Ziyou; Li, Yang; Chou, Kuo-Chih

    2014-01-01

    Graphical abstract: - Highlights: • h-BN fibers were successfully fabricated using H{sub 3}BO{sub 3} and C{sub 3}H{sub 6}N{sub 6} as raw materials. • The obtained BN fibers were polycrystalline and uniform in morphology. • It exhibited good oxidation resistance and low thermal expansion coefficient. - Abstract: Hexagonal boron nitride fibers were synthesized via polymeric precursor method using boric acid (H{sub 3}BO{sub 3}) and melamine (C{sub 3}H{sub 6}N{sub 6}) as raw materials. The precursor fibers were synthesized by water bath and BN fibers were prepared from the precursor at 1873 K for 3 h in flowing nitrogen atmosphere. The crystalline phase and microstructures of BN fibers were examined by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and high resolution electron microscopy. The results showed that h-BN fibers with uniform morphology were successfully fabricated. The well-synthesized BN fibers were polycrystalline with 0.4–1.5 μm in diameter and 200–500 μm in length. The as-prepared samples exhibited good oxidation resistance and low thermal expansion coefficient at high temperature.

  7. Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Y.J.; Hong, L.S.; Huang, K.F.; Tsay, J.E

    2002-11-01

    Gallium nitride (GaN) films have been homoepitaxially grown by low pressure metalorganic chemical vapor deposition technique using dimethylhydrazine (DMHy) and trimethylgallium (TMG) as the reactants at low temperatures ranging from 873 to 923 K and a constant pressure of 10 Torr. The potential of utilizing DMHy as a nitrogen source is evaluated through understanding the kinetics of GaN film growth. A growth rate dependency study with respect to DMHy and TMG concentrations indicates that Langmuir-Hinshelwood typed reaction dominates the film growth. From a model fitting to the experimental film growth rate, the adsorption equilibrium constant of DMHy is found to be approximately 1/20 that of TMG, indicating that V/III feed ratio can be reduced down to 20 to obtain a stoichiometric GaN film. Based on X-ray photoelectron spectroscope measurement, the films formed by DMHy, however, accompany significant carbon contamination due to the strong C-N bonding in DMHy. The contamination can be relieved effectively by introducing H{sub 2} into the reaction.

  8. Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source

    International Nuclear Information System (INIS)

    Hsu, Y.J.; Hong, L.S.; Huang, K.F.; Tsay, J.E.

    2002-01-01

    Gallium nitride (GaN) films have been homoepitaxially grown by low pressure metalorganic chemical vapor deposition technique using dimethylhydrazine (DMHy) and trimethylgallium (TMG) as the reactants at low temperatures ranging from 873 to 923 K and a constant pressure of 10 Torr. The potential of utilizing DMHy as a nitrogen source is evaluated through understanding the kinetics of GaN film growth. A growth rate dependency study with respect to DMHy and TMG concentrations indicates that Langmuir-Hinshelwood typed reaction dominates the film growth. From a model fitting to the experimental film growth rate, the adsorption equilibrium constant of DMHy is found to be approximately 1/20 that of TMG, indicating that V/III feed ratio can be reduced down to 20 to obtain a stoichiometric GaN film. Based on X-ray photoelectron spectroscope measurement, the films formed by DMHy, however, accompany significant carbon contamination due to the strong C-N bonding in DMHy. The contamination can be relieved effectively by introducing H 2 into the reaction

  9. Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure.

    Science.gov (United States)

    Besleaga, Cristina; Dumitru, Viorel; Trinca, Liliana Marinela; Popa, Adrian-Claudiu; Negrila, Constantin-Catalin; Kołodziejczyk, Łukasz; Luculescu, Catalin-Romeo; Ionescu, Gabriela-Cristina; Ripeanu, Razvan-George; Vladescu, Alina; Stan, George E

    2017-11-17

    Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors). AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate), corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c -axis texturing, deposited at a low temperature (~50 °C) on Si (100) substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films) for the realization of various type of sensors (with emphasis on bio-sensors) is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

  10. Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

    International Nuclear Information System (INIS)

    Skorupa, W.; Kreissig, U.; Hensel, E.; Bartsch, H.

    1984-01-01

    Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20-200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1-2 orders of magnitude. (author)

  11. Ion filter for high temperature cleaning

    International Nuclear Information System (INIS)

    Kutomi, Yasuhiro; Nakamori, Masaharu.

    1994-01-01

    A porous ceramic pipe mainly comprising alumina is used as a base pipe, and then crud and radioactive ion adsorbing materials in high temperature and high pressure water mainly comprising a FeTiO 3 compound are flame-coated on the outer surface thereof to a film thickness of about 100 to 300μ m as an aimed value by an acetylene flame-coating method. The flame-coated FeTiO 3 layer is also porous, so that high temperature and high pressure water to be cleaned can pass through from the inside to the outside of the pipe. Cruds can be removed and radioactive ions can be adsorbed during passage. Since all the operations can be conducted at high temperature and high pressure state, cooling is no more necessary for the high temperature and high pressure water to be cleaned, heat efficiency of the plant can be improved and a cooling facility can be saved. Further, since the flame-coating of FeTiO 3 to the porous ceramic pipe can be conducted extremely easily compared with production of a sintering product, cost for the production of filter elements can be saved remarkably. (T.M.)

  12. Non-destructive study of the ion-implantation-affected zone (the long-range effect) in titanium nitride

    International Nuclear Information System (INIS)

    Perry, A.J.; Treglio, J.R.; Schaffer, J.P.; Brunner, J.; Valvoda, V.; Rafaja, D.

    1994-01-01

    The depth to which metal ion implantation can change the structure of titanium nitride coatings is studied using two techniques - positron annihilation spectroscopy (PAS) and glancing-angle X-ray diffraction (GA-XRD) -which are normally applied to the study of bulk materials. The PAS results indicate that the depth to which vacancies are found greatly exceeds the depth at which the implanted material resides. In addition, the concentration of vacancies continues to increase with the dose of implanted ions. The GA-XRD data show that the implantation does not change the residual stress - it remains slightly tensile. Furthermore, there is an increase in the diffraction peak broadening, which is attributed to an increase in the local strain distribution resulting from the generation of a dislocation network at depths of up to several tenths of a micrometer below the implanted zone. The data support the view of a long-range effect, where metal ion implantation causes lattice defect generation within an implantation-affected zone (IAZ) to depths well beyond the implanted zone. The defective nature of the IAZ depends on the implanted dose and the acceleration voltage, as well as on the nature of the ions implanted. In the present work, there is no residual stress in the samples, so this cannot induce the IAZ. ((orig.))

  13. The effect of He and swift heavy ions on nanocrystalline zirconium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Janse van Vuuren, A., E-mail: arnojvv@gmail.com [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Skuratov, V.A. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Uglov, V.V. [Belarusian State University, Minsk (Belarus); Petrovich, S. [VINCA Institute of Nuclear Sciences, Belgrade University, Belgrade (Serbia)

    2014-05-01

    Recent studies have shown that swift heavy ion irradiation may significantly modulate hydrogen and helium behaviour in some materials. This phenomenon is of considerable practical interest for ceramics in general and also for candidate materials for use as inert matrix fuel hosts. These materials will accumulate helium via (n, α) reactions and will also be subjected to irradiation by fission fragments. Cross-sectional transmission electron microscopy and scanning electron microscopy was used to study nanocrystalline ZrN irradiated with 30 keV He to fluences between 10{sup 16} and 5 × 10{sup 16} cm{sup −2}, 167 MeV Xe to fluences between 5 × 10{sup 13} and 10{sup 14} cm{sup −2} and also 695 MeV Bi to a fluence of 1.5 × 10{sup 13} cm{sup −2}. He/Bi and He/Xe irradiated samples were annealed at temperatures between 600 and 1000 °C and were analysed using SEM, XTEM and selected area diffraction. The results indicated that post irradiation heat treatment induces exfoliation at a depth that corresponds to the end-of-range of 30 keV He ions. SEM and XTEM analysis of He/Xe irradiated samples revealed that electronic excitation effects, due to Xe ions, suppress helium blister formation and consequently the exfoliation processes. He/Bi samples however do not show the same effects. This suggests that nanocrystalline ZrN is prone to the formation of He blisters which may ultimately lead material failure. These effects may however be mitigated by electronic excitation effects from certain SHIs.

  14. The effect of He and swift heavy ions on nanocrystalline zirconium nitride

    International Nuclear Information System (INIS)

    Janse van Vuuren, A.; Neethling, J.H.; Skuratov, V.A.; Uglov, V.V.; Petrovich, S.

    2014-01-01

    Recent studies have shown that swift heavy ion irradiation may significantly modulate hydrogen and helium behaviour in some materials. This phenomenon is of considerable practical interest for ceramics in general and also for candidate materials for use as inert matrix fuel hosts. These materials will accumulate helium via (n, α) reactions and will also be subjected to irradiation by fission fragments. Cross-sectional transmission electron microscopy and scanning electron microscopy was used to study nanocrystalline ZrN irradiated with 30 keV He to fluences between 10 16 and 5 × 10 16 cm −2 , 167 MeV Xe to fluences between 5 × 10 13 and 10 14 cm −2 and also 695 MeV Bi to a fluence of 1.5 × 10 13 cm −2 . He/Bi and He/Xe irradiated samples were annealed at temperatures between 600 and 1000 °C and were analysed using SEM, XTEM and selected area diffraction. The results indicated that post irradiation heat treatment induces exfoliation at a depth that corresponds to the end-of-range of 30 keV He ions. SEM and XTEM analysis of He/Xe irradiated samples revealed that electronic excitation effects, due to Xe ions, suppress helium blister formation and consequently the exfoliation processes. He/Bi samples however do not show the same effects. This suggests that nanocrystalline ZrN is prone to the formation of He blisters which may ultimately lead material failure. These effects may however be mitigated by electronic excitation effects from certain SHIs

  15. Covalently coupled hybrid of graphitic carbon nitride with reduced graphene oxide as a superior performance lithium-ion battery anode

    Science.gov (United States)

    Fu, Yongsheng; Zhu, Junwu; Hu, Chong; Wu, Xiaodong; Wang, Xin

    2014-10-01

    An in situ chemical synthetic approach has been designed for the fabrication of a covalently coupled hybrid consisting of graphitic carbon nitride (g-C3N4) with reduced graphene oxide (rGO) with differing g-C3N4/rGO ratio. The epoxy groups of graphene oxide (GO) undergo a nucleophilic substitution reaction with dicyandiamide (C2H4N4) to form the C2H4N4-GO composite via a covalent C-N bond, and then both the in situ polymerization of C2H4N4 and the thermal reduction of GO can be achieved at higher temperatures, forming the covalently coupled g-C3N4-rGO. FT-IR, CP-MAS NMR and XPS analyses, clearly revealed a covalent interaction between the g-C3N4 and rGO sheets. The g-C3N4-rGO exhibits an unprecedented high, stable and reversible capacity of 1525 mA h g-1 at a current density of 100 mA g-1 after 50 cycles. Even at a large current density of 1000 mA g-1, a reversible capacity of 943 mA h g-1 can still be retained. The superior electrochemical performance of g-C3N4-rGO is attributed to the specific characteristics of the unique nanostructure of g-C3N4-rGO and the concerted effects of g-C3N4 and rGO, including covalent interactions between the two moieties, the good conductivity and high special surface area of the nanocomposite, as well as the template effect of the planar amino group of g-C3N4 for the dispersed decoration of Li+ ions.An in situ chemical synthetic approach has been designed for the fabrication of a covalently coupled hybrid consisting of graphitic carbon nitride (g-C3N4) with reduced graphene oxide (rGO) with differing g-C3N4/rGO ratio. The epoxy groups of graphene oxide (GO) undergo a nucleophilic substitution reaction with dicyandiamide (C2H4N4) to form the C2H4N4-GO composite via a covalent C-N bond, and then both the in situ polymerization of C2H4N4 and the thermal reduction of GO can be achieved at higher temperatures, forming the covalently coupled g-C3N4-rGO. FT-IR, CP-MAS NMR and XPS analyses, clearly revealed a covalent interaction between

  16. Considerations of ion temperature gradient driven turbulence

    International Nuclear Information System (INIS)

    Cowley, S.C.; Kulsrud, R.M.

    1991-02-01

    The ion temperature gradient driven instability is considered in this paper. Physical pictures are presented to clarify the nature of the instability. The saturation of a single eddy is modeled by a simple nonlinear equation. We show that eddies which are elongated in the direction of the temperature gradient are the most unstable and have the highest saturation amplitudes. In a sheared magnetic field, such elongated eddies twist with the field lines. This structure is shown to be alternative to the usual Fourier mode picture in which the mode is localized around the surface where k parallel = 0. We show how these elongated twisting eddies, which are an integral part of the ''ballooning mode'' structure, could survive in a torus. The elongated eddies are shown to be unstable to secondary instabilities that are driven by the large gradients in the long eddy. We argue that this mechanism isotropizes ion temperature gradient turbulence. We further argue that the ''mixing length'' is set by this nonlinear process, not by a linear eigenmode width. 17 refs., 6 figs

  17. Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun

    International Nuclear Information System (INIS)

    Shen Liru; Fu, Ricky K.Y.; Chu, Paul K.

    2004-01-01

    Aluminum nitride (AlN) is of interest in the industry because of its excellent electronic, optical, acoustic, thermal, and mechanical properties. In this work, aluminum nitride films are deposited on silicon wafers (100) by metal plasma immersion ion implantation and deposition (PIIID) using a modified hybrid gas-metal cathodic arc plasma source and with no intentional heating to the substrate. The mixed metal and gaseous plasma is generated by feeding the gas into the arc discharge region. The deposition rate is found to mainly depend on the Al ion flux from the cathodic arc source and is only slightly affected by the N 2 flow rate. The AlN films fabricated by this method exhibit a cubic crystalline microstructure with stable and low internal stress. The surface of the AlN films is quite smooth with the surface roughness on the order of 1/2 nm as determined by atomic force microscopy, homogeneous, and continuous, and the dense granular microstructures give rise to good adhesion with the substrate. The N to Al ratio increases with the bias voltage applied to the substrates. A fairly large amount of O originating from the residual vacuum is found in the samples with low N:Al ratios, but a high bias reduces the oxygen concentration. The compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800 deg. C for 1 h. Our hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasmas

  18. Plasma nitriding process by direct current glow discharge at low temperature increasing the thermal diffusivity of AISI 304 stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Prandel, L. V.; Somer, A.; Assmann, A.; Camelotti, F.; Costa, G.; Bonardi, C.; Jurelo, A. R.; Rodrigues, J. B.; Cruz, G. K. [Universidade Estadual de Ponta Grossa, Grupo de Espectroscopia Optica e Fotoacustica de Materiais, Departamento de Fisica, Av. Carlos Cavalcanti, 4748, CEP 84030-900, Ponta Grossa, PR (Brazil)

    2013-02-14

    This work reports for the first time on the use of the open photoacoustic cell technique operating at very low frequencies and at room temperature to experimentally determine the thermal diffusivity parameter of commercial AISI304 stainless steel and AISI304 stainless steel nitrided samples. Complementary measurements of X-ray diffraction and scanning electron microscopy were also performed. The results show that in standard AISI 304 stainless steel samples the thermal diffusivity is (4.0 {+-} 0.3) Multiplication-Sign 10{sup -6} m{sup 2}/s. After the nitriding process, the thermal diffusivity increases to the value (7.1 {+-} 0.5) Multiplication-Sign 10{sup -6} m{sup 2}/s. The results are being associated to the diffusion process of nitrogen into the surface of the sample. Carrying out subsequent thermal treatment at 500 Degree-Sign C, the thermal diffusivity increases up to (12.0 {+-} 2) Multiplication-Sign 10{sup -6} m{sup 2}/s. Now the observed growing in the thermal diffusivity must be related to the change in the phases contained in the nitrided layer.

  19. Synthesis of carbon nitride powder by selective etching of TiC0.3N0.7 in chlorine-containing atmosphere at moderate temperature

    International Nuclear Information System (INIS)

    Sui Jian; Lu Jinjun

    2010-01-01

    We reported the synthesis of carbon nitride powder by extracting titanium from single inorganic precursor TiC 0.3 N 0.7 in chlorine-containing atmosphere at ambient pressure and temperature not exceeding 500 deg. C. The TiC 0.3 N 0.7 crystalline structure acted as a template, supplying active carbon and nitrogen atoms for carbon nitride when it was destroyed in chlorination. X-ray diffraction data showed that the obtained carbon nitride powders were amorphous, which was in good agreement with transmission electron microscope analysis. The composition and structure of carbon nitride powders were analyzed by employing Fourier transform infrared spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Results indicated that disorder structure was most likely for the carbon nitride powders and the N content depended greatly on the chlorination temperature. Thermal analysis in flowing N 2 indicated that the mass loss started from 300 deg. C and the complete decomposition occurred at around 650 deg. C, confirming the low thermal stability of the carbon nitride material.

  20. Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

    International Nuclear Information System (INIS)

    Cloud, Andrew N.; Abelson, John R.; Davis, Luke M.; Girolami, Gregory S.

    2014-01-01

    Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300 °C from three recently synthesized M[N(t-Bu) 2 ] 2 precursors, where M = Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200 °C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18 nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities

  1. Application of Self-Propagating High Temperature Synthesis to the Fabrication of Actinide Bearing Nitride and Other Ceramic Nuclear Fuels

    International Nuclear Information System (INIS)

    Moore, John J.; Reigel, Marissa M.; Donohoue, Collin D.

    2009-01-01

    The project uses an exothermic combustion synthesis reaction, termed self-propagating high-temperature synthesis (SHS), to produce high quality, reproducible nitride fuels and other ceramic type nuclear fuels (cercers and cermets, etc.) in conjunction with the fabrication of transmutation fuels. The major research objective of the project is determining the fundamental SHS processing parameters by first using manganese as a surrogate for americium to produce dense Zr-Mn-N ceramic compounds. These fundamental principles will then be transferred to the production of dense Zr-Am-N ceramic materials. A further research objective in the research program is generating fundamental SHS processing data to the synthesis of (i) Pu-Am-Zr-N and (ii) U-Pu-Am-N ceramic fuels. In this case, Ce will be used as the surrogate for Pu, Mn as the surrogate for Am, and depleted uranium as the surrogate for U. Once sufficient fundamental data has been determined for these surrogate systems, the information will be transferred to Idaho National Laboratory (INL) for synthesis of Zr-Am-N, Pu-Am-Zr-N and U-Pu-Am-N ceramic fuels. The high vapor pressures of americium (Am) and americium nitride (AmN) are cause for concern in producing nitride ceramic nuclear fuel that contains Am. Along with the problem of Am retention during the sintering phases of current processing methods, are additional concerns of producing a consistent product of desirable homogeneity, density and porosity. Similar difficulties have been experienced during the laboratory scale process development stage of producing metal alloys containing Am wherein compact powder sintering methods had to be abandoned. Therefore, there is an urgent need to develop a low-temperature or low-heat fuel fabrication process for the synthesis of Am-containing ceramic fuels. Self-propagating high temperature synthesis (SHS), also called combustion synthesis, offers such an alternative process for the synthesis of Am nitride fuels. Although SHS

  2. Hybrid processing of Ti-6Al-4V using plasma immersion ion implantation combined with plasma nitriding

    Directory of Open Access Journals (Sweden)

    Silva Maria Margareth da

    2006-01-01

    Full Text Available Based on the fact that the Ti-6Al-4V alloy has good mechanical properties, excellent resistance to corrosion and also excellent biocompatibility, however with low wear resistance, this work aims to test plasma processes or combination of plasma and ion implantation processes to improve these characteristics. Two types of processing were used: two steps PIII (Plasma Immersion Ion Implantation combined with PN (Plasma Nitriding and single step PIII treatment. According to Auger Electron Spectroscopy (AES results, the best solution was obtained by PIII for 150 minutes resulting in ~ 65 nm of nitrogen implanted layer, while the sample treated with PIII (75 minutes and PN (75 minutes reached ~ 35 nm implanted layer. The improvement of surface properties could also be confirmed by the nanoindentation technique, with values of hardness increasing for both processes. AFM (Atomic Force Microscopy characterization showed that the single step PIII process presented greater efficiency than the duplex process (PIII + PN, probably due to the sputtering occurring during the second step (PN removing partially the implanted layer of first step (PIII.

  3. Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

    Science.gov (United States)

    Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

    2014-06-01

    The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

  4. Electron temperature effects for an ion beam source

    International Nuclear Information System (INIS)

    Uramoto, Joshin.

    1979-05-01

    A hydrogen high temperature plasma up to 200 eV is produced by acceleration of electrons in a hot hollow cathode discharge and is used as an ion beam source. Then, two characteristics are observed: A rate of the atomic ion (H + ) number increases above 70%. A perveance of the ion beam increases above 30 times compared with that of a cold plasma, while a floating potential of an ion acceleration electrode approaches an ion acceleration potential (- 500 V) according as an increment of the electron temperature. Moreover, a neutralized ion beam can be produced by only the negative floating electrode without an external power supply. (author)

  5. Synthesis of nitrided MoO{sub 2} and its application as anode materials for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Sukeun, E-mail: skyoon@kier.re.kr [New and Renewable Energy Research Division, Korea Institute of Energy Research, Daejeon 305-343 (Korea, Republic of); Jung, Kyu-Nam; Jin, Chang Soo; Shin, Kyung-Hee [New and Renewable Energy Research Division, Korea Institute of Energy Research, Daejeon 305-343 (Korea, Republic of)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer Synthesis of nitrided molybdenum oxide by nitridation. Black-Right-Pointing-Pointer Superior cyclability for nitrided molybdenum oxide anodes. Black-Right-Pointing-Pointer Electrochemical reaction behavior of nitrided molybdenum oxide with lithium. - Abstract: Nitrided MoO{sub 2} has been synthesized by hydrothermal processing followed by post-nitridation with NH{sub 3} and investigated as alternative anode materials for rechargeable lithium batteries. Characterization data reveal the presence of molybdenum nitride ({gamma}-Mo{sub 2}N and {delta}-MoN) and molybdenum oxynitride (MoO{sub x}N{sub y}). The nitrided MoO{sub 2} exhibits a capacity of >420 mAh/g after 100 cycles and good rate capability. The improved electrochemical performance of the nitrided MoO{sub 2} compared to that of molybdenum oxide (MoO{sub 2}) is attributed to high electrical conductivity provided by nitrogen doping/or substitution in the oxygen octahedral site of MoO{sub 2} structure.

  6. Experimental study of pyrolytic boron nitride at high temperature with and without proton and VUV irradiations

    International Nuclear Information System (INIS)

    Balat-Pichelin, M.; Eck, J.; Heurtault, S.; Glénat, H.

    2014-01-01

    Highlights: • New results for the high temperature study of pBN in high vacuum for the heat shield of solar probes. • Physico-chemical behavior of pBN studied up to 1700 K with proton and VUV irradiations. • Rather low effect of synergistic aggressions on the microstructure of pBN material. • The α/ε ratio of pBN coating on C/C measured up to 2200 K is 20% lower than for the C/C itself. - Abstract: In the frame of future exploration missions such as Solar Probe Plus (NASA) and PHOIBOS (ESA), research was carried out to study pyrolytic BN material envisaged as coating for their heat shields. The physico-chemical behavior of CVD pBN at very high temperature with or without hydrogen ions and VUV (Vacuum Ultra-Violet) irradiations was studied in high vacuum together with the in situ measurement of the thermal radiative properties conditioning the thermal equilibrium of the heat shield. Experimental results obtained on massive pBN samples are presented through in situ mass spectrometry and mass loss rate, and post-test microstructural characterization by XRD, SEM, AFM and nano-indentation techniques, some of them leading to mechanical properties. It could be concluded that synergistic effect of high temperature, protons and VUV radiation has an impact on the emission of gaseous species, the mass loss rate and the mechanical properties of the material

  7. Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

    Energy Technology Data Exchange (ETDEWEB)

    Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Schaekers, Marc [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Blasco, Nicolas [Air Liquide Electronics US, L.P., 46401 Landing Parkway, Fremont, California 94538 (United States)

    2013-03-18

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

  8. Characterization of stainless steel through Scanning Electron Microscopy, nitrided in the process of implantation of immersed ions in plasma

    International Nuclear Information System (INIS)

    Moreno S, H.

    2003-01-01

    The present project carries out the investigation of the nitridation of the austenitic stainless steel schedule 304, applying the novel technology of installation of nitrogen ions in immersed materials in plasma (Plll), by means of which they modify those properties of the surface of the steel. The obtained results by means of tests of Vickers microhardness, shows that the hardness was increment from 266 to 740 HV (microhardness units). It was determined by means of scanning electron microscopy, the one semiquantitative chemical analysis of the elements that constitute the austenitic stainless steel schedule 304; the obtained results, show to the nitrogen like an element of their composition in the pieces where carried out to end the PIII technology. The parameters of the plasma with which carried out the technology Plll, were monitored and determined by means of electric probes, and with which it was determined that the density of particles is stable in the interval of 1x10 -1 at 3x10 -1 Torr, and it is where better results of hardness were obtained. That reported in this work, they are the first results obtained when applying the technology Plll in Mexico, and with base in these, it is even necessary to investigate and to deepen until to dominate the process and to be in possibilities of proposing it to be carried out and exploited in an industrial way. (Author)

  9. Structural, morphological and mechanical properties of niobium nitride thin films grown by ion and electron beams emanated from plasma

    Science.gov (United States)

    Siddiqui, Jamil; Hussain, Tousif; Ahmad, Riaz; Umar, Zeeshan A.; Abdus Samad, Ubair

    2016-05-01

    The influence of variation in plasma deposition parameters on the structural, morphological and mechanical characteristics of the niobium nitride films grown by plasma-emanated ion and electron beams are investigated. Crystallographic investigation made by X-ray diffractometer shows that the film synthesized at 10 cm axial distance with 15 plasma focus shots (PFS) exhibits better crystallinity when compared to the other deposition conditions. Morphological analysis made by scanning electron microscope reveals a definite granular pattern composed of homogeneously distributed nano-spheroids grown as clustered particles for the film synthesized at 10 cm axial distance for 15 PFS. Roughness analysis demonstrates higher rms roughness for the films synthesized at shorter axial distance and by greater number of PFS. Maximum niobium atomic percentage (35.8) and maximum average hardness (19.4 ± 0.4 GPa) characterized by energy-dispersive spectroscopy and nano-hardness analyzer respectively are observed for film synthesized at 10 cm axial distance with 15 PFS.

  10. Predicting Microstructure Development During HighTemperature Nitriding of Martensitic Stainless SteelsUsing Thermodynamic Modeling

    OpenAIRE

    Tschiptschin, André Paulo

    2002-01-01

    Thermodynamic calculations of the Fe-Cr-N System in the region of the Gas Phase Equilibria have been compared with experimental results of maximum nitrogen absorption during nitriding of two Martensitic Stainless Steels (a 6 mm thick sheet of AISI 410S steel and green powder compacts of AISI 434L steel) under N2 atmospheres. The calculations have been performed combining the Fe-Cr-N System description contained in the SGTE Solid Solution Database and the gas phase for the N System contained i...

  11. Effect of finite ion-temperature on ion-acoustic solitary waves in an inhomogeneous plasma

    International Nuclear Information System (INIS)

    Shivamoggi, B.K.

    1981-01-01

    The propagation of weakly nonlinear ion-acoustic waves in an inhomogeneous plasma is studied taking into account the effect of finite ion temperature. It is found that, whereas both the amplitude and the velocity of propagation decrease as the ion-acoustic solitary wave propagates into regions of higher density, the effect of a finite ion temperature is to reduce the amplitude but enhance the velocity of propagation of the solitary wave. (author)

  12. The BEAN experiment - An EISCAT study of ion temperature anisotropies

    Directory of Open Access Journals (Sweden)

    I. W. McCrea

    Full Text Available Results are presented from a novel EISCAT special programme, SP-UK-BEAN, intended for the direct measurement of the ion temperature anisotropy during ion frictional heating events in the high-latitude F-region. The experiment employs a geometry which provides three simultaneous estimates of the ion temperature in a single F-region observing volume at a range of aspect angles from 0° to 36°. In contrast to most previous EISCAT experiments to study ion temperature anisotropies, field-aligned observations are made using the Sodankylä radar, while the Kiruna radar measures at an aspect angle of the order of 30°. Anisotropic effects can thus be studied within a small common volume whose size and altitude range is limited by the radar beamwidth, rather than in volumes which overlap but cover different altitudes. The derivation of line-of-sight ion temperature is made more complex by the presence of an unknown percentage of atomic and molecular ions at the observing altitude and the possibility of non-Maxwellian distortion of the ion thermal velocity distribution. The first problem has been partly accounted for by insisting that a constant value of electron temperature be maintained. This enables an estimate of the ion composition to be made, and facilitates the derivation of more realistic line-of-sight ion temperatures and temperature anisotropies. The latter problem has been addressed by assuming that the thermal velocity distribution remains bi-Maxwellian. The limitations of these approaches are discussed. The ion temperature anisotropies and temperature partition coefficients during two ion heating events give values intermediate between those expected for atomic and for molecular species. This result is consistent with an analysis which indicates that significant proportions of molecular ions (up to 50% were present at the times of greatest heating.

  13. High-temperature superconductors induced by ion implantation. Final report

    International Nuclear Information System (INIS)

    Greenwald, A.C.; Johnson, E.

    1988-08-01

    High dose oxygen ion implantation (10 to the 17th power ions per sq. cm.) at elevated temperatures (300 C) has been shown to adjust the critical temperature of gamma-Y-Ba-Cu-O and Bi-Ca-Sr-Cu-O materials. These results are in marked contrast to earlier work which showed complete destruction of superconducting properties for similar radiation doses, and marked reduction in superconducting properties at one-tenth this dose in the 1-2-3- compound only. Experiments also showed that the superconducting materials can be patterned into conducting and nonconducting areas without etching by ion implantation, allowing maintenance of planar geometries required for microcircuit fabrication. Experiments on deposition of thin films of high temperature superconductors for use with the ion implantation experiments showed that ion beam sputtering from a single target could achieve the correct stoichiometry. Variations of composition with ion beam energy and angle of sputtered ions were studied

  14. High-ion temperature experiments with negative-ion-based NBI in LHD

    International Nuclear Information System (INIS)

    Takeiri, Y.; Morita, S.; Tsumori, K.; Ikeda, K.; Oka, Y.; Osakabe, M.; Nagaoka, K.; Goto, M.; Miyazawa, J.; Masuzaki, S.; Ashikawa, N.; Yokoyama, M.; Narihara, K.; Yamada, I.; Kubo, S.; Shimozuma, T.; Inagaki, S.; Tanaka, K.; Peterson, B.J.; Ida, K.; Kaneko, O.; Komori, A.; Murakami, S.

    2005-01-01

    High-Z plasmas have been produced with Ar- and/or Ne-gas fuelling to increase the ion temperature in the LHD plasmas heated with the high-energy negative-ion-based NBI. Although the electron heating is dominant in the high-energy NBI heating, the direct ion heating power is much enhanced effectively in low-density plasmas due to both an increase in the beam absorption (ionisation) power and a reduction of the ion density in the high-Z plasmas. Intensive Ne- and/or Ar-glow discharge cleaning works well to suppress dilution of the high-Z plasmas with the wall-absorbed hydrogen. As a result, the ion temperature increases with an increase in the ion heating power normalized by the ion density, and reaches 10 keV. An increase in the ion temperature is also observed with an addition of the centrally focused ECRH to the low-density and high-Z NBI plasma, suggesting improvement of the ion transport. The results obtained in the high-Z plasma experiments with the high-energy NBI heating indicate that an increase in the direct ion heating power and improvement of the ion transport are essential to the ion temperature rise, and that a high-ion temperature would be obtained as well in hydrogen plasmas with low-energy positive-NBI heating which is planed in near future in LHD. (author)

  15. Ion composition and temperature in the topside ionosphere.

    Science.gov (United States)

    Brace, L. H.; Dunham, G. S.; Mayr, H. G.

    1967-01-01

    Particle and energy continuity equations derived and solved by computer method ion composition and plasma temperature measured by Explorer XXII PARTICLE and energy continuity equations derived and solved by computer method for ion composition and plasma temperature measured by Explorer XXII

  16. High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

    International Nuclear Information System (INIS)

    McNallan, M.

    1993-01-01

    Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

  17. Comparing the effect of pressure and temperature on ion mobilities

    International Nuclear Information System (INIS)

    Tabrizchi, Mahmoud; Rouholahnejad, Fereshteh

    2005-01-01

    The effect of pressure on ion mobilities has been investigated and compared with that of temperature. In this connection, an ion mobility spectrometry (IMS) cell, which employs a corona discharge as the ionization source, has been designed and constructed to allow varying pressure inside the drift region. IMS spectra were recorded at various pressures ranging from 15 Torr up to atmospheric pressure. The results show that IMS peaks shift perfectly linear with pressure which is in excellent agreement with the ion mobility theory. However, experimental ion mobilities versus temperature show deviation from the theoretical trend. The deviation is attributed to formation of clusters. The different behaviour of pressure and temperature was explained on the basis of the different impact of pressure and temperature on hydration and clustering of ions. Pressure affects the clustering reactions linearly but temperature affects it exponentially

  18. Quality improvement of ZnO thin layers overgrown on Si(100 substrates at room temperature by nitridation pretreatment

    Directory of Open Access Journals (Sweden)

    Peng Wang

    2012-06-01

    Full Text Available To improve the quality of ZnO thin film overgrown on Si(100 substrate at RT (room temperature, the Si(100 surface was pretreated with different methods. The influence of interface on the overgrown ZnO layers was investigated by atomic force microscopy, photoluminescence and X-ray diffraction. We found that the nitridation pretreatment could significantly improve the quality of RT ZnO thin film through two-fold effects: one was to buffer the big lattice mismatch and ease the stress resulted from heterojunction growth; the other was to balance the interface charge, block the symmetric inheritance from the cubic Si (100 substrate and thus restrain the formation of zincblende phase.

  19. High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

    Science.gov (United States)

    Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

    2018-06-01

    The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

  20. Leachability of nitrided ilmenite in hydrochloric acid

    CSIR Research Space (South Africa)

    Swanepoel, JJ

    2010-10-01

    Full Text Available Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200 °C) chlorination reaction...

  1. Sputter deposition of tantalum-nitride films on copper using an rf-plasma

    International Nuclear Information System (INIS)

    Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

    1994-01-01

    A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

  2. Ion temperature anisotropy limitation in high beta plasmas

    International Nuclear Information System (INIS)

    Scime, Earl E.; Keiter, Paul A.; Balkey, Matthew M.; Boivin, Robert F.; Kline, John L.; Blackburn, Melanie; Gary, S. Peter

    2000-01-01

    Measurements of parallel and perpendicular ion temperatures in the Large Experiment on Instabilities and Anisotropies (LEIA) space simulation chamber display an inverse correlation between the upper bound on the ion temperature anisotropy and the parallel ion beta (β=8πnkT/B 2 ). Fluctuation measurements indicate the presence of low frequency, transverse, electromagnetic waves with wave numbers and frequencies that are consistent with predictions for Alfven Ion Cyclotron instabilities. These observations are also consistent with in situ spacecraft measurements in the Earth's magnetosheath and with a theoretical/computational model that predicts that such an upper bound on the ion temperature anisotropy is imposed by scattering from enhanced fluctuations due to growth of the Alfven ion cyclotron instability. (c) 2000 American Institute of Physics

  3. Distributions of the ion temperature, ion pressure, and electron density over the current sheet surface

    Energy Technology Data Exchange (ETDEWEB)

    Kyrie, N. P., E-mail: kyrie@fpl.gpi.ru; Markov, V. S., E-mail: natalya.kyrie@yandex.ru; Frank, A. G.; Vasilkov, D. G.; Voronova, E. V. [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation)

    2016-06-15

    The distributions of the ion temperature, ion pressure, and electron density over the width (the major transverse dimension) of the current sheet have been studied for the first time. The current sheets were formed in discharges in argon and helium in 2D and 3D magnetic configurations. It is found that the temperature of argon ions in both 2D and 3D magnetic configurations is almost uniform over the sheet width and that argon ions are accelerated by the Ampère force. In contrast, the distributions of the electron density and the temperature of helium ions are found to be substantially nonuniform. As a result, in the 2D magnetic configuration, the ion pressure gradient across the sheet width makes a significant contribution (comparable with the Ampère force) to the acceleration of helium ions, whereas in the 3D magnetic configuration, the Ampère force is counterbalanced by the pressure gradient.

  4. Distributions of the ion temperature, ion pressure, and electron density over the current sheet surface

    International Nuclear Information System (INIS)

    Kyrie, N. P.; Markov, V. S.; Frank, A. G.; Vasilkov, D. G.; Voronova, E. V.

    2016-01-01

    The distributions of the ion temperature, ion pressure, and electron density over the width (the major transverse dimension) of the current sheet have been studied for the first time. The current sheets were formed in discharges in argon and helium in 2D and 3D magnetic configurations. It is found that the temperature of argon ions in both 2D and 3D magnetic configurations is almost uniform over the sheet width and that argon ions are accelerated by the Ampère force. In contrast, the distributions of the electron density and the temperature of helium ions are found to be substantially nonuniform. As a result, in the 2D magnetic configuration, the ion pressure gradient across the sheet width makes a significant contribution (comparable with the Ampère force) to the acceleration of helium ions, whereas in the 3D magnetic configuration, the Ampère force is counterbalanced by the pressure gradient.

  5. Mechanisms of hydrogen retention in metallic beryllium and beryllium oxide and properties of ion-induced beryllium nitride; Rueckhaltemechanismen fuer Wasserstoff in metallischem Beryllium und Berylliumoxid sowie Eigenschaften von ioneninduziertem Berylliumnitrid

    Energy Technology Data Exchange (ETDEWEB)

    Oberkofler, Martin

    2011-09-22

    In the framework of this thesis laboratory experiments on atomically clean beryllium surfaces were performed. They aim at a basic understanding of the mechanisms occurring upon interaction of a fusion plasma with a beryllium first wall. The retention and the temperature dependent release of implanted deuterium ions are investigated. An atomistic description is developed through simulations and through the comparison with calculations based on density functional theory. The results of these investigations are compared to the behaviour of hydrogen upon implantation into thermally grown beryllium oxide layers. Furthermore, beryllium nitride is produced by implantation of nitrogen into metallic beryllium and its properties are investigated. The results are interpreted with regard to the use of beryllium in a fusion reactor. (orig.)

  6. Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

    International Nuclear Information System (INIS)

    Shams, Q.A.

    1988-01-01

    Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing

  7. Ion-temperature-gradient-driven modes in bi-ion magnetoplasma

    Energy Technology Data Exchange (ETDEWEB)

    Batool, Nazia; Mirza, Arshad M [Theoretical Plasma Physics Group, Department of Physics, Quaid-i-Azam University, Islamabad 45320 (Pakistan); Qamar, Anisa [Department of Physics, Peshawar University, NWFP 25120 (Pakistan)], E-mail: nazia.batool@ncp.edu.pk

    2008-12-15

    The toroidal ion-temperature-gradient (ITG)-driven electrostatic drift waves are investigated for bi-ion plasmas with equilibrium density, temperature and magnetic field gradients. Using Braginskii's transport equations for the ions and Boltzmann distributed electrons, the mode coupling equations are derived. New ITG-driven modes are shown to exist. The results of the present study should be helpful to understand several wave phenomena in space and tokamak plasmas.

  8. Method for producing polycrystalline boron nitride

    International Nuclear Information System (INIS)

    Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

    1975-01-01

    A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

  9. Evaluation of the Effect of Different Plasma-Nitriding Parameters on the Properties of Low-Alloy Steel

    Science.gov (United States)

    Zdravecká, Eva; Slota, Ján; Solfronk, Pavel; Kolnerová, Michaela

    2017-07-01

    This work is concerned with the surface treatment (ion nitriding) of different plasma-nitriding parameters on the characteristics of DIN 1.8519 low-alloy steel. The samples were nitrided from 500 to 570 °C for 5-40 h using a constant 25% N2-75% H2 gaseous mixture. Lower temperature (500-520 °C) favors the formation of compound layers of γ' and ɛ iron nitrides in the surface layers, whereas a monophase γ'-Fe4 N layer can be obtained at a higher temperature. The hardness of this layer can be obtained when nitriding is performed at a higher temperature, and the hardness decreases when the temperature increases to 570 °C. These results indicate that pulsed plasma nitriding is highly efficient at 550 °C and can form thick and hard nitrided layers with satisfactory mechanical properties. The results show the optimized nitriding process at 540 °C for 20 h. This process can be an interesting means of enhancing the surface hardness of tool steels to forge dies compared to stamped steels with zinc coating with a reduced coefficient of friction and improving the anti-sticking properties of the tool surface.

  10. X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment

    International Nuclear Information System (INIS)

    Abendroth, B.; Gago, R.; Eichhorn, F.; Moeller, W.

    2004-01-01

    Relaxation of the intrinsic stress of cubic boron nitride (cBN) thin films has been studied by x-ray diffraction (XRD) using synchrotron light. The stress relaxation has been attained by simultaneous medium-energy ion bombardment (2-10 keV) during magnetron sputter deposition, and was confirmed macroscopically by substrate curvature measurements. In order to investigate the stress-release mechanisms, XRD measurements were performed in in-plane and out-of-plane geometry. The analysis shows a pronounced biaxial state of compressive stress in the cBN films grown without medium-energy ion bombardment. This stress is partially released during the medium-energy ion bombardment. It is suggested that the main path for stress relaxation is the elimination of strain within the cBN grains due to annealing of interstitials

  11. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  12. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  13. Nitriding of high speed steel

    International Nuclear Information System (INIS)

    Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

    2010-01-01

    Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

  14. High resolution medium energy ion scattering study of silicon oxidation and oxy nitridation

    International Nuclear Information System (INIS)

    Gusev, E.P.; Lu, H.C.; Garfunkel, E.; Gustafsson, T.

    1998-01-01

    Full text: Silicon oxide is likely to remain the material of choice for gate oxides in microelectronics for the foreseeable future. As device become ever smaller and faster, the thickness of these layers in commercial products is predicted to be less than 50 Angstroms in just a few years. An understanding of such devices will therefore likely to be based on microscopic concepts and should now be investigated by atomistic techniques. With medium energy ion scattering (MEIS) using an electrostatic energy analyzer, depth profiling of thin (<60 Angstroms) silicon oxide films on Si(100) with 3 - 5 Angstroms depth resolution in the near region has been done. The growth mechanism of thin oxide films on Si(100) has been studied, using sequential oxygen isotope exposures. It is found that the oxide films are stoichiometric to within approx. 10 Angstroms of the interface. It is also found that the oxidation reactions occur at the surface, in the transition region and at interface, with only the third region being included in the conventional (Deal-Grove) model for oxide formation. Nitrogen is sometimes added to gate oxides, as it has been found empirically that his improves some of the electrical properties. The role, location and even the amount of nitrogen that exists in such films are poorly understood, and represent interesting analytical challenges. MEIS data will be presented that address these questions, measured for a number of different processing conditions. We have recently demonstrated how to perform nitrogen nano-engineering in such ultrathin gate dielectrics, and these results will also be discussed

  15. A self-propagation high-temperature synthesis and annealing route to synthesis of wave-like boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jilin; Zhang, Laiping [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China); Gu, Yunle, E-mail: ncm@mail.wit.edu.cn [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China); Pan, Xinye; Zhao, Guowei; Zhang, Zhanhui [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China)

    2013-03-15

    Highlights: ► Large quantities of wave-like BN nanotubes were synthesized by SHS-annealing method. ► The catalytic boron-containing porous precursor was produced by self-propagation high-temperature synthesis method. ► Three growth models were proposed to explain the growth mechanism of the wave-like BN nanotubes. - Abstract: Large quantities of boron nitride (BN) nanotubes were synthesized by annealing a catalytic boron-containing porous precursor in flowing NH{sub 3} gas at 1180 °C. The porous precursor was prepared by self-propagation high-temperature synthesis (SHS) method at 800 °C using Mg, B{sub 2}O{sub 3} and amorphous boron powder (α-B) as the starting materials. The porous precursor played an important role in large quantities synthesis of BN nanotubes. The as-synthesized product was characterized by X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), Raman, Scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), Transmission electron microscopy (TEM) and High-resolution transmission electron microscopy (HRTEM). Characterization results indicated that the BN nanotubes displayed wave-like inner structures with diameters in the range of 50–300 nm and average lengths of more than 10 μm. The possible growth mechanism of the BN nanotubes was also discussed.

  16. Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.

    Science.gov (United States)

    Choi, David; Poudel, Nirakar; Park, Saungeun; Akinwande, Deji; Cronin, Stephen B; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

    2018-04-04

    Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO 2 /Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate. At the same power density, an 80 nm thick h-BN layer on the silicon substrate can yield a factor of 2.2 reduction of the hot spot temperature, whereas a 35 nm thick h-BN layer on the WG substrate is sufficient to obtain a factor of 4.1 reduction. The larger effect of the h-BN heat spreader on WG than on SiO 2 /Si is attributed to a smaller effective heat transfer coefficient per unit area for three-dimensional heat conduction into the thick, low-thermal conductivity WG substrate than for one-dimensional heat conduction through the thin oxide layer on silicon. Consequently, the h-BN lateral heat-spreading length is much larger on WG than on SiO 2 /Si, resulting in a larger degree of temperature reduction.

  17. Effect of Primary Recrystallized Microstructure and Nitriding on Secondary Recrystallization in Grain Oriented Silicon Steel by Low Temperature Slab Reheating

    Directory of Open Access Journals (Sweden)

    LIU Gong-tao

    2018-01-01

    Full Text Available Different primary recrystallized grain sizes were obtained by controlling decarburization process in grain oriented silicon steel produced by low temperature slab reheating technique. The effect of primary grain size on secondary recrystallization and magnetic properties was studied. The appropriate nitrogen content after nitriding was explored in case of very large primary grain size, and the effect of {411}〈148〉 primary recrystallized texture on the abnormal growth behavior was discussed. The results show that an increase in average primary grain size from 10μm to 15μm leads to an increase of secondary recrystallization temperature and a sharper Goss texture with higher magnetic permeability, in the condition of a very large average primary grain size of 28μm, the suitable amount of nitrogen increases to about 6×10-4. The {411}〈148〉 oriented grains in primary recrystallized microstructure can easily grow into larger sizes due to their size advantage, and thus hinder the abnormal growth of secondary grains, moreover, the hindering effect is more pronounced in the abnormal growth of Brass-oriented grains due to their misorientation with low migration rate other than Goss grains.

  18. Effect of substrate temperature on the microstructural properties of titanium nitride nanowires grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gbordzoe, S.; Kotoka, R.; Craven, Eric; Kumar, D.; Wu, F.; Narayan, J.

    2014-01-01

    The current work reports on the growth and microstructural characterization of titanium nitride (TiN) nanowires on single crystal silicon substrates using a pulsed laser deposition method. The physical and microstructural properties of the nanowires were characterized using field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The corrosion properties of the TiN nanowires compared to TiN thin film were evaluated using Direct Current potentiodynamic and electrochemical impedance spectroscopy. The nanowires corroded faster than the TiN thin film, because the nanowires have a larger surface area which makes them more reactive in a corrosive environment. It was observed from the FESEM image analyses that as the substrate temperature increases from 600 °C to 800 °C, there was an increase in both diameter (25 nm–50 nm) and length (150 nm–250 nm) of the nanowire growth. There was also an increase in spatial density with an increase of substrate temperature. The TEM results showed that the TiN nanowires grow epitaxially with the silicon substrate via domain matching epitaxy paradigm, despite a large misfit

  19. The rotational temperature of polar molecular ions in Coulomb crystals

    International Nuclear Information System (INIS)

    Bertelsen, Anders; Joergensen, Solvejg; Drewsen, Michael

    2006-01-01

    With MgH + ions as a test case, we investigate to what extent the rotational motion of smaller polar molecular ions sympathetically cooled into Coulomb crystals in linear Paul traps couples to the translational motions of the ion ensemble. By comparing the results obtained from rotational resonance-enhanced multiphoton photo-dissociation experiments with data from theoretical simulations, we conclude that the effective rotational temperature exceeds the translational temperature (<100 mK) by more than two orders of magnitude, indicating a very weak coupling. (letter to the editor)

  20. Leachability of nitrided ilmenite in hydrochloric acid

    OpenAIRE

    Swanepoel, J.J.; van Vuuren, D.S.; Heydenrych, M.

    2011-01-01

    Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200°C) chlorination reaction will not react with chlorine. It is therefore necessary to remove as much iron as possible from the nitrided ilmenite. Hydrochloric acid leaching is a possible process route to remove metallic iron from nitrided ilmenite without excessive dissolution o...

  1. Measurement of the ion temperature in a diffuse theta pinch

    International Nuclear Information System (INIS)

    Kudo, Koichi; Watanabe, Yukio; Ogi, Sukeomi; Sumikawa, Toshio; Akazaki, Masanori

    1979-01-01

    The Doppler broadening of helium ion spectra was observed, and the ion temperature of theta pinch plasma was obtained. The apparatus for the measurement consists of a spectroscope, a photomultiplier and an oscilloscope. The time variation of initial plasma density was obtained. The doppler broadening of the spectra was observed in case of the plasma density of 2 x 10 13 /cm 3 and 3 x 10 12 /cm 3 . The analyses of the spectra gave the ion temperature. The double temperature distribution was seen. The temperature of the low temperature part was 5 to 9 electron-volt, and that of the high temperature part several hundred electron-volt. The high temperature is caused by the thermalization of particles accelerated by the magnetic piston. The decay of high temperature ions is due to the charge exchange with the neutral particles. The time of the highest temperature corresponds to the time at which the luminescent layer reaches to the central axis. (Kato, T.)

  2. Theory of ion-temperature-gradient-driven turbulence in tokamaks

    International Nuclear Information System (INIS)

    Lee, G.S.; Diamond, P.H.

    1986-01-01

    An analytic theory of ion-temperature-gradient-driven turbulence in tokamaks is presented. Energy-conserving, renormalized spectrum equations are derived and solved in order to obtain the spectra of stationary ion-temperature-gradient-driven turbulence. Corrections to mixing-length estimates are calculated explicitly. The resulting anomalous ion thermal diffusivity chi/sub i/ = 0.4[(π/2)ln(1 + eta/sub i/)] 2 [(1 + eta/sub i/)/tau] 2 rho/sub s/ 2 c/sub s//L/sub s/ is derived and is found to be consistent with experimentally-deduced thermal diffusivities. The associated electron thermal diffusivity and particle and heat-pinch velocities are also calculated. The effect of impurity gradients on saturated ion-temperature-gradient-driven turbulence is discussed and a related explanation of density profile steepening during Z-mode operation is proposed. 35 refs., 4 figs

  3. Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian [Veeco Instruments, 1 Terminal Drive, Plainview, New York 11803 (United States)

    2013-01-15

    Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

  4. Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

    International Nuclear Information System (INIS)

    Chao, D.S.; Liang, J.H.

    2013-01-01

    Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

  5. Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature

    Directory of Open Access Journals (Sweden)

    Chengkun Ma

    2017-11-01

    Full Text Available Based on the optimal proportion of resin and curing agent, an ultrahigh-temperature inorganic phosphate adhesive was prepared with aluminum dihydric phosphate, aluminium oxide ( α -Al2O3, etc. and cured at room temperature (RT. Then, nano-aluminum nitride (nano-AlN, nano-Cupric oxide (nano-CuO, and nano-titanium oxide (nano-TiO2 were added into the adhesive. Differential scanning calorimetry was conducted using the inorganic phosphate adhesive to analyze the phosphate reactions during heat treatment, and it was found that 15 wt % nano-AlN could clearly decrease the curing temperature. Scanning electron microscopy was used to observe the microphenomenon of the modified adhesive at ultrahigh-temperature. The differential thermal analysis of the inorganic phosphate adhesive showed that the weight loss was approximately 6.5 wt % when the mass ratio of resin to curing agent was 1:1.5. An X-ray diffraction analysis of the adhesive with 10% nano-AlN showed that the phase structure changed from AlPO4(11-0500 to the more stable AlPO4(10-0423 structure after heat treatment. The shear strength of the adhesive containing 10% nano-AlN reached 7.3 MPa at RT due to the addition of nano-AlN, which promoted the formation of phosphate and increased the Al3+.

  6. Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature.

    Science.gov (United States)

    Ma, Chengkun; Chen, Hailong; Wang, Chao; Zhang, Jifeng; Qi, Hui; Zhou, Limin

    2017-11-03

    Based on the optimal proportion of resin and curing agent, an ultrahigh-temperature inorganic phosphate adhesive was prepared with aluminum dihydric phosphate, aluminium oxide ( α -Al₂O₃), etc. and cured at room temperature (RT). Then, nano-aluminum nitride (nano-AlN), nano-Cupric oxide (nano-CuO), and nano-titanium oxide (nano-TiO₂) were added into the adhesive. Differential scanning calorimetry was conducted using the inorganic phosphate adhesive to analyze the phosphate reactions during heat treatment, and it was found that 15 wt % nano-AlN could clearly decrease the curing temperature. Scanning electron microscopy was used to observe the microphenomenon of the modified adhesive at ultrahigh-temperature. The differential thermal analysis of the inorganic phosphate adhesive showed that the weight loss was approximately 6.5 wt % when the mass ratio of resin to curing agent was 1:1.5. An X-ray diffraction analysis of the adhesive with 10% nano-AlN showed that the phase structure changed from AlPO₄(11-0500) to the more stable AlPO₄(10-0423) structure after heat treatment. The shear strength of the adhesive containing 10% nano-AlN reached 7.3 MPa at RT due to the addition of nano-AlN, which promoted the formation of phosphate and increased the Al 3+ .

  7. The ionization length in plasmas with finite temperature ion sources

    Science.gov (United States)

    Jelić, N.; Kos, L.; Tskhakaya, D. D.; Duhovnik, J.

    2009-12-01

    The ionization length is an important quantity which up to now has been precisely determined only in plasmas which assume that the ions are born at rest, i.e., in discharges known as "cold ion-source" plasmas. Presented here are the results of our calculations of the ionization lengths in plasmas with an arbitrary ion source temperature. Harrison and Thompson (H&T) [Proc. Phys. Soc. 74, 145 (1959)] found the values of this quantity for the cases of several ion strength potential profiles in the well-known Tonks-Langmuir [Phys. Rev. 34, 876 (1929)] discharge, which is characterized by "cold" ion temperature. This scenario is also known as the "singular" ion-source discharge. The H&T analytic result covers cases of ion sources proportional to exp(βΦ) with Φ the normalized plasma potential and β =0,1,2 values, which correspond to particular physical scenarios. Many years following H&T's work, Bissell and Johnson (B&J) [Phys. Fluids 30, 779 (1987)] developed a model with the so-called "warm" ion-source temperature, i.e., "regular" ion source, under B&J's particular assumption that the ionization strength is proportional to the local electron density. However, it appears that B&J were not interested in determining the ionization length at all. The importance of this quantity to theoretical modeling was recognized by Riemann, who recently answered all the questions of the most advanced up-to-date plasma-sheath boundary theory with cold ions [K.-U. Riemann, Phys. Plasmas 13, 063508 (2006)] but still without the stiff warm ion-source case solution, which is highly resistant to solution via any available analytic method. The present article is an extension of H&T's results obtained for a single point only with ion source temperature Tn=0 to arbitrary finite ion source temperatures. The approach applied in this work is based on the method recently developed by Kos et al. [Phys. Plasmas 16, 093503 (2009)].

  8. Anomalous ion thermal transport in hot ion plasmas by the ion temperature gradient mode

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J.Y.; Horton, W. (Texas Univ., Austin, TX (United States). Inst. for Fusion Studies); Coppi, B. (Massachusetts Inst. of Tech., Cambridge, MA (United States). Research Lab. of Electronics)

    1992-01-01

    Experiments show that the observed radial profiles of the ion thermal conductivity {chi}{sub i} have the opposite shapes with those obtained from the ion temperature gradient mode ({eta}{sub i} mode) turbulence model by the traditional mixing length estimate. In this work, this radial profile problem is reconsidered with an electromagnetic study of the linear stability of the toroidal {eta}{sub i} mode and a new rule for choosing the mixing length. It is first shown that the electromagnetic effect gives a significant stabilizing effect on the toroidal {eta}{sub i} mode, and that the observed reduction of {chi}{sub i}(r) in the core region can be explained by this electromagnetic effect. Secondly, in view of earlier numerical simulations showing the transfer of fluctuation energy to larger scales that those for the fastest growth rate, as well as fluctuation measurements indicating longer radial correlation lengths, a new mixing length formula is proposed to explain the radial increase of the {chi}{sub i}. It is shown the new formula fits well the observed {chi}{sub i}(r) profiles in two TFTR supershot discharges and also gives the scaling law in the current and the magnetic field which agrees better with experiment than the conventional formula.

  9. Anomalous ion thermal transport in hot ion plasmas by the ion temperature gradient mode

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J.Y.; Horton, W. [Texas Univ., Austin, TX (United States). Inst. for Fusion Studies; Coppi, B. [Massachusetts Inst. of Tech., Cambridge, MA (United States). Research Lab. of Electronics

    1992-08-01

    Experiments show that the observed radial profiles of the ion thermal conductivity {chi}{sub i} have the opposite shapes with those obtained from the ion temperature gradient mode ({eta}{sub i} mode) turbulence model by the traditional mixing length estimate. In this work, this radial profile problem is reconsidered with an electromagnetic study of the linear stability of the toroidal {eta}{sub i} mode and a new rule for choosing the mixing length. It is first shown that the electromagnetic effect gives a significant stabilizing effect on the toroidal {eta}{sub i} mode, and that the observed reduction of {chi}{sub i}(r) in the core region can be explained by this electromagnetic effect. Secondly, in view of earlier numerical simulations showing the transfer of fluctuation energy to larger scales that those for the fastest growth rate, as well as fluctuation measurements indicating longer radial correlation lengths, a new mixing length formula is proposed to explain the radial increase of the {chi}{sub i}. It is shown the new formula fits well the observed {chi}{sub i}(r) profiles in two TFTR supershot discharges and also gives the scaling law in the current and the magnetic field which agrees better with experiment than the conventional formula.

  10. Anomalous ion thermal transport in hot ion plasmas by the ion temperature gradient mode

    International Nuclear Information System (INIS)

    Kim, J.Y.; Horton, W.; Coppi, B.

    1992-01-01

    Experiments show that the observed radial profiles of the ion thermal conductivity χ i have the opposite shapes with those obtained from the ion temperature gradient mode (η i mode) turbulence model by the traditional mixing length estimate. In this work, this radial profile problem is reconsidered with an electromagnetic study of the linear stability of the toroidal η i mode and a new rule for choosing the mixing length. It is first shown that the electromagnetic effect gives a significant stabilizing effect on the toroidal η i mode, and that the observed reduction of χ i (r) in the core region can be explained by this electromagnetic effect. Secondly, in view of earlier numerical simulations showing the transfer of fluctuation energy to larger scales that those for the fastest growth rate, as well as fluctuation measurements indicating longer radial correlation lengths, a new mixing length formula is proposed to explain the radial increase of the χ i . It is shown the new formula fits well the observed χ i (r) profiles in two TFTR supershot discharges and also gives the scaling law in the current and the magnetic field which agrees better with experiment than the conventional formula

  11. Ion currents to cylindrical Langmuir probes for finite ion temperature values: Theory

    International Nuclear Information System (INIS)

    Ballesteros, J.; Palop, J.I.F.; Colomer, V.; Hernandez, M.A.

    1995-01-01

    As it is known, the experimental ion currents to a cylindrical Langmuir probe fit quite well to the radial motion theory, developed by Allen, Boyd and Reynolds (ABR Model) and generalized by Chen for the cylindrical probe case. In this paper, we are going to develop a generalization of the ABR theory, taking into account the influence of a finite ion temperature value

  12. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  13. Nano-nitride cathode catalysts of Ti, Ta, and Nb for polymer electrolyte fuel cells: Temperature-programmed desorption investigation of molecularly adsorbed oxygen at low temperature

    KAUST Repository

    Ohnishi, Ryohji

    2013-01-10

    TiN, NbN, TaN, and Ta3N5 nanoparticles synthesized using mesoporous graphitic (mpg)-C3N4 templates were investigated for the oxygen reduction reaction (ORR) as cathode catalysts for polymer electrolyte fuel cells. The temperature-programmed desorption (TPD) of molecularly adsorbed O2 at 120-170 K from these nanoparticles was examined, and the resulting amount and temperature of desorption were key factors determining the ORR activity. The size-dependent TiN nanoparticles (5-8 and 100 nm) were then examined. With decreasing particle size, the density of molecularly adsorbed O2 per unit of surface area increased, indicating that a decrease in particle size increases the number of active sites. It is hard to determine the electrochemical active surface area for nonmetal electrocatalysts (such as oxides or nitrides), because of the absence of proton adsorption/desorption peaks in the voltammograms. In this study, O2-TPD for molecularly adsorbed O2 at low temperature demonstrated that the amount and strength of adsorbed O2 were key factors determining the ORR activity. The properties of molecularly adsorbed O2 on cathode catalysts are discussed against the ORR activity. © 2012 American Chemical Society.

  14. Physical vapor deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Kester, D.J.

    1991-01-01

    Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

  15. Temperature dependence of three-body ion-molecule reactions

    International Nuclear Information System (INIS)

    Boehringer, H.; Arnold, F.

    1983-01-01

    The temperature dependence of the ion-molecule association reactions (i) N 2 + + N 2 + M → N 4 + + M (M=N 2 , He), (ii) O 2 + + O 2 + M → O 4 + + M (M=O 2 , He) and (iii) He + + 2He → He 2 + + He have been studied over an extended temperature range to temperatures as low as 30K with a recently constructed liquid helium-cooled ion drift tube. Over most of the temperature range the threebody reaction rate coefficients show an inverse temperature dependence proportional to Tsup(-n) with n in the range 0.6 to 2.9. This temperature dependence is quite consistent with current theories of ion molecule association. At low temperatures, however, a deviation from the Tsup(-n) dependence was observed for the association reactions (ii). For reactions (i) different temperature dependences were obtained for N 2 and He third bodies indicating an additional temperature dependence of the collisional stabilisation process. (Authors)

  16. Calorimetric low temperature detectors for heavy ion physics

    Energy Technology Data Exchange (ETDEWEB)

    Egelhof, P.; Kraft-Bermuth, S. [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany)]|[Mainz Univ. (Germany). Inst. fuer Physik

    2005-05-01

    Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics at present and at the next generation heavy ion facilities is given with a special emphasis on the conditions for heavy ion detection and the potential advantage of cryogenic detectors for applications in heavy ion physics. Two types of calorimetric low temperature detectors for the detection of energetic heavy ions have been developed and their response to the impact of heavy ions was investigated systematically for a wide range of energies (E=0.1-360 MeV/amu) and ion species ({sup 4}He.. {sup 238}U). Excellent results with respect to energy resolution, {delta}E/E ranging from 1 to 5 x 10{sup -3} even for the heaviest ions, and other basic detector properties such as energy linearity with no indication of a pulse height defect, energy threshold, detection efficiency and radiation hardness have been obtained, representing a considerable improvement as compared to conventional heavy ion detectors based on ionization. With the achieved performance, calorimetric low temperature detectors bear a large potential for applications in various fields of basic and applied heavy ion research. A brief overview of a few prominent examples, such as high resolution nuclear spectroscopy, high resolution nuclear mass determination, which may be favourably used for identification of superheavy elements or in direct reaction experiments with radioactive beams, as well as background discrimination in accelerator mass spectrometry, is given, and first results are presented. For instance, the use of cryogenic detectors allowed to improve the sensitivity in trace analysis of {sup 236}U by one order of magnitude and to determine the up to date smallest isotope ratio of {sup 236}U/{sup 238}U = 6.1 x 10{sup -12} in a sample of natural uranium. Besides the detection of heavy ions, the concept of cryogenic detectors also

  17. Calorimetric low temperature detectors for heavy ion physics

    International Nuclear Information System (INIS)

    Egelhof, P.; Kraft-Bermuth, S.; Mainz Univ.

    2005-07-01

    Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics at present and at the next generation heavy ion facilities is given with a special emphasis on the conditions for heavy ion detection and the potential advantage of cryogenic detectors for applications in heavy ion physics. Two types of calorimetric low temperature detectors for the detection of energetic heavy ions have been developed and their response to the impact of heavy ions was investigated systematically for a wide range of energies (E=0.1-360 MeV/amu) and ion species ( 4 He.. 238 U). Excellent results with respect to energy resolution, ΔE/E ranging from 1 to 5 x 10 -3 even for the heaviest ions, and other basic detector properties such as energy linearity with no indication of a pulse height defect, energy threshold, detection efficiency and radiation hardness have been obtained, representing a considerable improvement as compared to conventional heavy ion detectors based on ionization. With the achieved performance, calorimetric low temperature detectors bear a large potential for applications in various fields of basic and applied heavy ion research. A brief overview of a few prominent examples, such as high resolution nuclear spectroscopy, high resolution nuclear mass determination, which may be favourably used for identification of superheavy elements or in direct reaction experiments with radioactive beams, as well as background discrimination in accelerator mass spectrometry, is given, and first results are presented. For instance, the use of cryogenic detectors allowed to improve the sensitivity in trace analysis of 236 U by one order of magnitude and to determine the up to date smallest isotope ratio of 236 U/ 238 U = 6.1 x 10 -12 in a sample of natural uranium. Besides the detection of heavy ions, the concept of cryogenic detectors also provides considerable advantage for X

  18. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  19. Global versus local mechanisms of temperature sensing in ion channels.

    Science.gov (United States)

    Arrigoni, Cristina; Minor, Daniel L

    2018-05-01

    Ion channels turn diverse types of inputs, ranging from neurotransmitters to physical forces, into electrical signals. Channel responses to ligands generally rely on binding to discrete sensor domains that are coupled to the portion of the channel responsible for ion permeation. By contrast, sensing physical cues such as voltage, pressure, and temperature arises from more varied mechanisms. Voltage is commonly sensed by a local, domain-based strategy, whereas the predominant paradigm for pressure sensing employs a global response in channel structure to membrane tension changes. Temperature sensing has been the most challenging response to understand and whether discrete sensor domains exist for pressure and temperature has been the subject of much investigation and debate. Recent exciting advances have uncovered discrete sensor modules for pressure and temperature in force-sensitive and thermal-sensitive ion channels, respectively. In particular, characterization of bacterial voltage-gated sodium channel (BacNa V ) thermal responses has identified a coiled-coil thermosensor that controls channel function through a temperature-dependent unfolding event. This coiled-coil thermosensor blueprint recurs in other temperature sensitive ion channels and thermosensitive proteins. Together with the identification of ion channel pressure sensing domains, these examples demonstrate that "local" domain-based solutions for sensing force and temperature exist and highlight the diversity of both global and local strategies that channels use to sense physical inputs. The modular nature of these newly discovered physical signal sensors provides opportunities to engineer novel pressure-sensitive and thermosensitive proteins and raises new questions about how such modular sensors may have evolved and empowered ion channel pores with new sensibilities.

  20. Temperature Uniformity of Wafer on a Large-Sized Susceptor for a Nitride Vertical MOCVD Reactor

    International Nuclear Information System (INIS)

    Li Zhi-Ming; Jiang Hai-Ying; Han Yan-Bin; Li Jin-Ping; Yin Jian-Qin; Zhang Jin-Cheng

    2012-01-01

    The effect of coil location on wafer temperature is analyzed in a vertical MOCVD reactor by induction heating. It is observed that the temperature distribution in the wafer with the coils under the graphite susceptor is more uniform than that with the coils around the outside wall of the reactor. For the case of coils under the susceptor, we find that the thickness of the susceptor, the distance from the coils to the susceptor bottom and the coil turns significantly affect the temperature uniformity of the wafer. An optimization process is executed for a 3-inch susceptor with this kind of structure, resulting in a large improvement in the temperature uniformity. A further optimization demonstrates that the new susceptor structure is also suitable for either multiple wafers or large-sized wafers approaching 6 and 8 inches

  1. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

    KAUST Repository

    Foronda, Humberto M.; Wu, Feng; Zollner, Christian; Alif, Muhammad Esmed; Saifaddin, Burhan; Almogbel, Abdullah; Iza, Michael; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

    2017-01-01

    temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth

  2. In Situ Monitoring of Temperature inside Lithium-Ion Batteries by Flexible Micro Temperature Sensors

    Directory of Open Access Journals (Sweden)

    Pei-Chi Chen

    2011-10-01

    Full Text Available Lithium-ion secondary batteries are commonly used in electric vehicles, smart phones, personal digital assistants (PDA, notebooks and electric cars. These lithium-ion secondary batteries must charge and discharge rapidly, causing the interior temperature to rise quickly, raising a safety issue. Over-charging results in an unstable voltage and current, causing potential safety problems, such as thermal runaways and explosions. Thus, a micro flexible temperature sensor for the in in-situ monitoring of temperature inside a lithium-ion secondary battery must be developed. In this work, flexible micro temperature sensors were integrated into a lithium-ion secondary battery using the micro-electro-mechanical systems (MEMS process for monitoring temperature in situ.

  3. Theory of neoclassical ion temperature-gradient-driven turbulence

    Science.gov (United States)

    Kim, Y. B.; Diamond, P. H.; Biglari, H.; Callen, J. D.

    1991-02-01

    The theory of collisionless fluid ion temperature-gradient-driven turbulence is extended to the collisional banana-plateau regime. Neoclassical ion fluid evolution equations are developed and utilized to investigate linear and nonlinear dynamics of negative compressibility ηi modes (ηi≡d ln Ti/d ln ni). In the low-frequency limit (ωB2p. As a result of these modifications, growth rates are dissipative, rather than sonic, and radial mode widths are broadened [i.e., γ˜k2∥c2s(ηi -(2)/(3) )/μi, Δx˜ρs(Bt/Bp) (1+ηi)1/2, where k∥, cs, and ρs are the parallel wave number, sound velocity, and ion gyroradius, respectively]. In the limit of weak viscous damping, enhanced neoclassical polarization persists and broadens radial mode widths. Linear mixing length estimates and renormalized turbulence theory are used to determine the ion thermal diffusivity in both cases. In both cases, a strong favorable dependence of ion thermal diffusivity on Bp (and hence plasma current) is exhibited. Furthermore, the ion thermal diffusivity for long wavelength modes exhibits favorable density scaling. The possible role of neoclassical ion temperature-gradient-driven modes in edge fluctuations and transport in L-phase discharges and the L to H transition is discussed.

  4. Amorphous intergranular films in silicon nitride ceramics quenched from high temperatures

    International Nuclear Information System (INIS)

    Cinibulk, M.K.; Kleebe, H.; Schneider, G.A.; Ruehle, M.

    1993-01-01

    High-temperature microstructure of an MgO-hot-pressed Si 3 N 4 and a Yb 2 O 3 + Al 2 O 3 -sintered/annealed Si 3 N 4 were obtained by quenching thin specimens from temperatures between 1,350 and 1,550 C. Quenching materials from 1,350 C produced no observable exchanges in the secondary phases at triple-grain junctions or along grain boundaries. Although quenching from temperatures of ∼1,450 C also showed no significant changes in the general microstructure or morphology of the Si 3 N 4 grains, the amorphous intergranular film thickness increased substantially from an initial ∼1 nm in the slowly cooled material to 1.5--9 nm in the quenched materials. The variability of film thickness in a given material suggests a nonequilibrium state. Specimens quenched from 1,550 C revealed once again thin (1-nm) intergranular films at all high-angle grain boundaries, indicating an equilibrium condition. The changes observed in intergranular-film thickness by high-resolution electron microscopy can be related to the eutectic temperature of the system and to diffusional and viscous processes occurring in the amorphous intergranular film during the high-temperature anneal prior to quenching

  5. Ion temperature gradient mode driven solitons and shocks

    Science.gov (United States)

    Zakir, U.; Adnan, Muhammad; Haque, Q.; Qamar, Anisa; Mirza, Arshad M.

    2016-04-01

    Ion temperature gradient (ITG) driven solitons and shocks are studied in a plasma having gradients in the equilibrium number density and equilibrium ion temperature. In the linear regime, it is found that the ion temperature and the ratio of the gradient scale lengths, ηi=Ln/LT , affect both the real frequency and the growth rate of the ITG driven wave instability. In the nonlinear regime, for the first time we derive a Korteweg de Vries-type equation for the ITG mode, which admits solitary wave solution. It is found that the ITG mode supports only compressive solitons. Further, it is noticed that the soliton amplitude and width are sensitive to the parameter ηi=Ln/LT . Second, in the presence of dissipation in the system, we obtain a Burger type equation, which admits the shock wave solution. This work may be useful to understand the low frequency electrostatic modes in inhomogeneous electron-ion plasma having density and ion temperature gradients. For illustration, the model has been applied to tokamak plasma.

  6. Zircaloy-4 and M5 high temperature oxidation and nitriding in air

    Energy Technology Data Exchange (ETDEWEB)

    Duriez, C. [Institut de Radioprotection et Surete Nucleaire, Direction de Prevention des Accidents Majeurs, Centre de Cadarache, 13115 St Paul Lez Durance (France)], E-mail: christian.duriez@irsn.fr; Dupont, T.; Schmet, B.; Enoch, F. [Universite Technologique de Troyes, BP 2060, 10010 Troyes (France)

    2008-10-15

    For the purpose of nuclear power plant severe accident analysis, degradation of Zircaloy-4 and M5 cladding tubes in air at high temperature was investigated by thermo-gravimetric analysis, in isothermal conditions, in a 600-1200 deg. C temperature range. Alloys were investigated either in a 'as received' bare state, or after steam pre-oxidation at 500 {sup o}C to simulate in-reactor corrosion. At the beginning of air exposure, the oxidation rate obeys a parabolic law, characteristic of solid-state diffusion limited regime. Parabolic rate constants compare, for Zircaloy-4 as well as for M5, with recently assessed correlations for high temperature Zircaloy-4 steam-oxidation. A thick layer of dense protective zirconia having a columnar structure forms during this diffusion-limited regime. Then, a kinetic transition (breakaway type) occurs, due to radial cracking along the columnar grain boundaries of this protective dense oxide scale. The breakaway is observed for a scale thickness that strongly increases with temperature. At the lowest temperatures, the M5 alloy appears to be breakaway-resistant, showing a delayed transition compared to Zircaloy-4. However, for both alloys, a pre-existing corrosion scale favours the transition, which occurs much earlier. The post transition kinetic regime is linear only for the lowest temperatures investigated. From 800 deg. C, a continuously accelerated regime is observed and is associated with formation of a strongly porous non-protective oxide. A mechanism of nitrogen-assisted oxide growth, involving formation and re-oxidation of ZrN particles, as well as nitrogen associated zirconia phase transformations, is proposed to be responsible for this accelerated degradation.

  7. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

    KAUST Repository

    Foronda, Humberto M.

    2017-11-23

    In this work, reduced threading dislocation density AlN on (0 0 0 1) 6H-SiC was realized through the use of reduced temperature AlN interlayers in the metalorganic chemical vapor deposition growth. We explored the dependence of the interlayer growth temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth resulted in a threading dislocation density of 7 × 108 cm−2 indicating a significant reduction in the defect density of AlN in comparison to direct growth of AlN on SiC (∼1010 cm−2). Atomic force microscopy images demonstrated a clear step-terrace morphology that is consistent with step flow growth at high temperature. Reducing the interlayer growth temperature increased the TD inclination and thus enhanced TD-TD interactions. The TDD was decreased via fusion and annihilation reactions.

  8. The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

    International Nuclear Information System (INIS)

    Siddiqua, Poppy; O'Leary, Stephen K.

    2016-01-01

    Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the doping concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the doping concentration selection. The device consequences of these results are then explored.

  9. Temperature annealing of tracks induced by ion irradiation of graphite

    International Nuclear Information System (INIS)

    Liu, J.; Yao, H.J.; Sun, Y.M.; Duan, J.L.; Hou, M.D.; Mo, D.; Wang, Z.G.; Jin, Y.F.; Abe, H.; Li, Z.C.; Sekimura, N.

    2006-01-01

    Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing

  10. Solvothermal synthesis: a new route for preparing nitrides

    CERN Document Server

    Demazeau, G; Denis, A; Largeteau, A

    2002-01-01

    Solvothermal synthesis appears to be an interesting route for preparing nitrides such as gallium nitride and aluminium nitride, using ammonia as solvent. A nitriding additive is used to perform the reaction and, in the case of gallium nitride, is encapsulated by melt gallium. The syntheses are performed in the temperature range 400-800 deg. C and in the pressure range 100-200 MPa. The synthesized powders are characterized by x-ray diffraction and scanning electron microscopy. Finely divided gallium nitride GaN and aluminium nitride AlN, both with wurtzite-type structure, can be obtained by this route.

  11. Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

    International Nuclear Information System (INIS)

    Zolper, J.C.; Han, J.; Biefeld, R.M.

    1997-01-01

    The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at ∼1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N 2 /NH 3 ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity

  12. Helicon plasma ion temperature measurements and observed ion cyclotron heating in proto-MPEX

    Science.gov (United States)

    Beers, C. J.; Goulding, R. H.; Isler, R. C.; Martin, E. H.; Biewer, T. M.; Caneses, J. F.; Caughman, J. B. O.; Kafle, N.; Rapp, J.

    2018-01-01

    The Prototype-Material Plasma Exposure eXperiment (Proto-MPEX) linear plasma device is a test bed for exploring and developing plasma source concepts to be employed in the future steady-state linear device Material Plasma Exposure eXperiment (MPEX) that will study plasma-material interactions for the nuclear fusion program. The concept foresees using a helicon plasma source supplemented with electron and ion heating systems to reach necessary plasma conditions. In this paper, we discuss ion temperature measurements obtained from Doppler broadening of spectral lines from argon ion test particles. Plasmas produced with helicon heating alone have average ion temperatures downstream of the Helicon antenna in the range of 3 ± 1 eV; ion temperature increases to 10 ± 3 eV are observed with the addition of ion cyclotron heating (ICH). The temperatures are higher at the edge than the center of the plasma either with or without ICH. This type of profile is observed with electrons as well. A one-dimensional RF antenna model is used to show where heating of the plasma is expected.

  13. Characterization of electron temperature by simulating a multicusp ion source

    Energy Technology Data Exchange (ETDEWEB)

    Yeon, Yeong Heum [Sungkyunkwan University, WCU Department of Energy Science, 2066, Seobu-ro, Jangan-gu, Suwon-si (Korea, Republic of); Ghergherehchi, Mitra; Kim, Sang Bum; Jun, Woo Jung [Sungkyunkwan University, School of Information & Communication Engineering, 2066, Seobu-ro, Jangan-gu, Suwon-si (Korea, Republic of); Lee, Jong Chul; Mohamed Gad, Khaled Mohamed [Sungkyunkwan University, WCU Department of Energy Science, 2066, Seobu-ro, Jangan-gu, Suwon-si (Korea, Republic of); Namgoong, Ho [Sungkyunkwan University, School of Information & Communication Engineering, 2066, Seobu-ro, Jangan-gu, Suwon-si (Korea, Republic of); Chai, Jong Seo, E-mail: jschai@skku.edu [Sungkyunkwan University, School of Information & Communication Engineering, 2066, Seobu-ro, Jangan-gu, Suwon-si (Korea, Republic of)

    2016-12-01

    Multicusp ion sources are used in cyclotrons and linear accelerators to produce high beam currents. The structure of a multicusp ion source consists of permanent magnets, filaments, and an anode body. The configuration of the array of permanent magnets, discharge voltage of the plasma, extraction bias voltage, and structure of the multicusp ion source body decide the quality of the beam. The electrons are emitted from the filament by thermionic emission. The emission current can be calculated from thermal information pertaining to the filament, and from the applied voltage and current. The electron trajectories were calculated using CST Particle Studio to optimize the plasma. The array configuration of the permanent magnets decides the magnetic field inside the ion source. The extraction bias voltage and the structure of the multicusp ion source body decide the electric field. Optimization of the electromagnetic field was performed with these factors. CST Particle Studio was used to calculate the electron temperature with a varying permanent magnet array. Four types of permanent magnet array were simulated to optimize the electron temperature. It was found that a 2-layer full line cusp field (with inverse field) produced the best electron temperature control behavior.

  14. Influence of temperature on properties of nitrogen plasma source ion implantation (N-PSII) of Ti6A14V alloy

    CERN Document Server

    Geng Man; Zhao Qing

    2001-01-01

    Specimens of Ti6Al4V alloy were implanted with nitrogen plasma source ion implantation (N-PSII) at temperatures between 100 degree C and 600 degree C to a ion dose of 4 x 10 sup 1 sup 7 cm sup - sup 2. Auger Electron Spectroscopy (AES) was used to determine the nitrogen concentration depth profiles. Microhardness measurements and pin-on-disk wear test were performed to evaluate the improvements of the surface modification. Glancing angle X-ray diffraction (XRD) was employed to determine the phases presented in the surface modified layer. The thickness of implanted layer increased by about an order of magnitude when the temperature was elevated from 100 degree C to 600 degree C. Higher surface hardness and wear resistance was also obtained at higher temperature. Scanning electron microscopy (SEM) showed distinct microstructural changes and the presence of titanium nitrides in the implanted surface

  15. Influence of low-temperature nitriding on the strain-induced martensite and laser-quenched austenite in a magnetic encoder made from 304L stainless steel

    Science.gov (United States)

    Leskovšek, Vojteh; Godec, Matjaž; Kogej, Peter

    2016-01-01

    We have investigated the possibility of producing a magnetic encoder by an innovative process. Instead of turning grooves in the encoder bar for precise positioning, we incorporated the information in 304L stainless steel by transforming the austenite to martensite after bar extrusion in liquid nitrogen and marking it with a laser, which caused a local transformation of martensite back into austenite. 304L has an excellent corrosion resistance, but a low hardness and poor wear resistance, which limits its range of applications. However, nitriding is a very promising way to enhance the mechanical and magnetic properties. After low-temperature nitriding at 400 °C it is clear that both ε- and α′-martensite are present in the deformed microstructure, indicating the simultaneous stress-induced and strain-induced transformations of the austenite. The effects of a laser surface treatment and the consequent appearance of a non-magnetic phase due to the α′ → γ transformation were investigated. The EDS maps show a high concentration of nitrogen in the alternating hard surface layers of γN and α′N (expanded austenite and martensite), but no significantly higher concentration of chromium or iron was detected. The high surface hardness of this nitride layer will lead to steels and encoders with better wear and corrosion resistance. PMID:27492862

  16. EISCAT measurements of ion temperatures which indicate non-isotropic ion velocity distributions

    International Nuclear Information System (INIS)

    Perraut, S.; Brekke, A.; Hubert, D.

    1984-01-01

    Substantial increases of the ion temperature can be observed at high latitudes as a consequence of strong convection electric fields. We have measured, with EISCAT, three independent components of the ion velocity vector and temperature in the same scattering volume, at about 300 km. During periods of strong variations in ion velocity (consequently of the E-field), the ion temperatures derived at the 3 sites are different. This difference, which appears to be systematic for the two experiments studied, can be interpreted in terms of different ion temperature perpendicular and parallel to the magnetic field, i.e. Tsub(i perpendicular) greater than Tsub(i parallel). Assuming that a bi-Maxwellian distribution is present for convection electric field strengths as large as 50 mV m -1 , one obtains an anisotropy factor of approximately 1.5. It also appears that resonant charge exchange is the dominant collision process. During the evening sector events studied, the electron density was decreasing, whereas the electron temperature was generally increasing. Such events are strongly related to variations in the magnetic H component detected on the ground. (author)

  17. Corrosion behavior of low energy, high temperature nitrogen ion ...

    Indian Academy of Sciences (India)

    Corrosion behavior of low energy, high temperature nitrogen ion-implanted AISI 304 stainless steel. M GHORANNEVISS1, A SHOKOUHY1,∗, M M LARIJANI1,2,. S H HAJI HOSSEINI 1, M YARI1, A ANVARI4, M GHOLIPUR SHAHRAKI1,3,. A H SARI1 and M R HANTEHZADEH1. 1Plasma Physics Research Center, Science ...

  18. Electrolytes for Wide Operating Temperature Lithium-Ion Cells

    Science.gov (United States)

    Smart, Marshall C. (Inventor); Bugga, Ratnakumar V. (Inventor)

    2016-01-01

    Provided herein are electrolytes for lithium-ion electrochemical cells, electrochemical cells employing the electrolytes, methods of making the electrochemical cells and methods of using the electrochemical cells over a wide temperature range. Included are electrolyte compositions comprising a lithium salt, a cyclic carbonate, a non-cyclic carbonate, and a linear ester and optionally comprising one or more additives.

  19. Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

    Science.gov (United States)

    Khanna, Rohit

    In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride

  20. Active ion temperature measurement with heating neutral beam

    International Nuclear Information System (INIS)

    Miura, Yukitoshi; Matsuda, Toshiaki; Yamamoto, Shin

    1987-03-01

    When the heating neutral-beam (hydrogen beam) is injected into a deuterium plasma, the density of neutral particles is increased locally. By using this increased neutral particles, the local ion temperature is measured by the active charge-exchange method. The analyzer is the E//B type mass-separated neutral particle energy analyzer and the measured position is about one third outside of the plasma radius. The deuterium energy spectrum is Maxwellian, and the temperature is increased from 350 eV to 900 eV during heating. Since the local hydrogen to deuterium density concentration and the density of the heating neutral-beam as well as the ion temperature can be obtained good S/N ratio, the usefulness of this method during neutral-beam heating is confirmed by this experiment. (author)

  1. Hot pressing of uranium nitride and mixed uranium plutonium nitride

    International Nuclear Information System (INIS)

    Chang, J.Y.

    1975-01-01

    The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

  2. Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

    International Nuclear Information System (INIS)

    Tian Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2002-01-01

    Dynamic plasma-based thin-film deposition incorporating ion mixing and plasma immersion is an effective technique to synthesize nitride-based hard films. We have fabricated TiN films using a filtered titanium vacuum arc in a nitrogen plasma environment. A pulsed high voltage is applied to the target for a short time when the metallic arc is fired to attain simultaneous plasma deposition and ion mixing. We investigate the dependence of the corrosion resistance and interfacial structure of the treated samples on the applied voltage. Our Auger results reveal an oxygen-rich surface film due to the non-ultra-high-vacuum conditions and high affinity of oxygen to titanium. The corrosion current is reduced by two orders of magnitude comparing the sample processed at 8 kV to the untreated sample, but the 23 kV sample unexpectedly shows worse results. The pitting potential diminishes substantially although the corrosion current is similar to that observed in the 8 kV sample. The polarization test data are consistent with our scanning electron microscopy observation, corroborating the difference in the pitting distribution and appearance. This anomalous behavior is believed to be due to the change in the chemical composition as a result of high-energy ion bombardment

  3. Temperature dependence and the moving species during ion mixing

    International Nuclear Information System (INIS)

    Xia, W.; Fernandes, M.; Hewett, C.A.; Lau, S.S.; Poker, D.B.; Biersack, J.P.

    1988-01-01

    In this paper, the authors review the experimental observations of the temperature dependence and the moving species in ion mixing, emphasizing the metal-semiconductor systems. Ion mixing is the combined effect of two components. One component is temperature independent and is primarily due to events in the prompt regime, the other component is temperature dependent and has the characteristics of the associated thermal reactions. The moving species during ion mixing are influenced by collisional effects, either due to secondary recoils, or due to local hot spots, or both. The secondary recoil concept is consistent with experimental observations that the motion of the lighter element in a bilayer sample is enhanced. There is ample evidence that while the a thermal regime is caused by particle-solid interactions, thermodynamical forces are important in deciding the magnitude of mixing. In the thermally activated regime, the ion induced reaction product should be influenced by the heats of formation of various compounds. We also indicate areas where satisfactory explanations are not available at present

  4. Temperature dependence of copper diffusion in different thickness amorphous tungsten/tungsten nitride layer

    Science.gov (United States)

    Asgary, Somayeh; Hantehzadeh, Mohammad Reza; Ghoranneviss, Mahmood

    2017-11-01

    The amorphous W/WN films with various thickness (10, 30 and 40 nm) and excellent thermal stability were successfully prepared on SiO2/Si substrate with evaporation and reactive evaporation method. The W/WN bilayer has technological importance because of its low resistivity, high melting point, and good diffusion barrier properties between Cu and Si. The thermal stability was evaluated by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). In annealing process, the amorphous W/WN barrier crystallized and this phenomenon is supposed to be the start of Cu atoms diffusion through W/WN barrier into Si. With occurrence of the high-resistive Cu3Si phase, the W/WN loses its function as a diffusion barrier. The primary mode of Cu diffusion is the diffusion through grain boundaries that form during heat treatments. The amorphous structure with optimum thickness is the key factor to achieve a superior diffusion barrier characteristic. The results show that the failure temperature increased by increasing the W/WN film thickness from 10 to 30 nm but it did not change by increasing the W/WN film thickness from 30 to 40 nm. It is found that the 10 and 40 nm W/WN films are good diffusion barriers at least up to 800°C while the 30 nm W/WN film shows superior properties as a diffusion barrier, but loses its function as a diffusion barrier at about 900°C (that is 100°C higher than for 10 and 40 nm W/WN films).

  5. Effects of the safety factor on ion temperature gradient modes

    International Nuclear Information System (INIS)

    Wang, A.K.; Dong, J.Q.; Sanuki, H.; Itoh, K.

    2003-01-01

    A model for the ion temperature gradient (ITG) driven instability is derived from Braginskii magnetohydrodynamic equations of ions. The safety factor q in a toroidal plasma is introduced into the model through the current density J parallel . The effects of q or J parallel on both the ITG instability in k perpendicular and k parallel spectra and the critical stability thresholds are studied. It is shown that the current density // J or the safety factor q plays an important role in stabilizing the ITG instability. (author)

  6. Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin Metal Nitride Directly Deposited on SiO2

    Institute of Scientific and Technical Information of China (English)

    HAN Yue-Ping; HAN Yan

    2009-01-01

    Physical and chemical properties of titanium oxynitride (TiOxNy) formed by low-temperature oxidation of titanium nitride (TIN) layer are investigated for advanced metal-oxide--semiconductor (MOS) gate dielectric application.TiOx Ny exhibits polycrystalline properties after the standard thermal process for MOS device fabrication,showing the preferred orientation at [200].Superior electrical properties of TiOxNy can be maintained before and after the annealing,probably due to the nitrogen incorporation in the oxide bulk and at the interface.Naturally formed transition layer between TiOxNy and SiO2 is also confirmed.

  7. Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

    International Nuclear Information System (INIS)

    Dante, Roberto C.; Sánchez-Arévalo, Francisco M.; Chamorro-Posada, Pedro; Vázquez-Cabo, José; Huerta, Lazaro; Lartundo-Rojas, Luis; Santoyo-Salazar, Jaime

    2015-01-01

    The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, the sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures

  8. Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

    Energy Technology Data Exchange (ETDEWEB)

    Dante, Roberto C., E-mail: rcdante@yahoo.com [Facultad de Mecánica, Escuela Politécnica Nacional (EPN), Ladrón de Guevara E11-253, Quito (Ecuador); Sánchez-Arévalo, Francisco M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Chamorro-Posada, Pedro [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Vázquez-Cabo, José [Dpto. de Teoría de la Señal y Comunicaciones, Universidad de Vigo, ETSI Telecomunicación, Lagoas Marcosende s/n, Vigo (Spain); Huerta, Lazaro [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Lartundo-Rojas, Luis [Centro de Nanociencias y Micro y Nanotecnologías—IPN, Luis Enrique Erro s/n, U. Prof. Adolfo López Mateos, 07738 Ciudad de Mexico, Distrito Federal (Mexico); Santoyo-Salazar, Jaime [Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07360 (Mexico); and others

    2015-03-15

    The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, the sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures.

  9. Modification of embedded Cu nanoparticles: Ion irradiation at room temperature

    International Nuclear Information System (INIS)

    Johannessen, B.; Kluth, P.; Giulian, R.; Araujo, L.L.; Llewellyn, D.J.; Foran, G.J.; Cookson, D.J.; Ridgway, M.C.

    2007-01-01

    Cu nanoparticles (NPs) with an average diameter of ∼25 A were synthesized in SiO 2 by ion implantation and thermal annealing. Subsequently, the NPs were exposed to ion irradiation at room temperature simultaneously with a bulk Cu reference film. The ion species/energy was varied to achieve different values for the nuclear energy loss. The short-range atomic structure and average NP diameter were measured by means of extended X-ray absorption fine structure spectroscopy and small angle X-ray scattering, respectively. Transmission electron microscopy yielded complementary results. The short-range order of the Cu films remained unchanged consistent with the high regeneration rate of bulk elemental metals. For the NP samples it was found that increasing nuclear energy loss yielded gradual dissolution of NPs. Furthermore, an increased structural disorder was observed for the residual NPs

  10. Design for a low temperature ion implantation and luminescence cryostat

    International Nuclear Information System (INIS)

    Noonan, J.R.; Kirkpatrick, C.G.; Myers, D.R.; Streetman, B.G.

    1976-01-01

    Several simple design changes of a conventional liquid helium optical Dewar can significantly improve the cryostat's versatility for use in low temperature particle irradiation. A bellows assembly provides precise sample positioning and allows convenient access for electrical connections. A heat exchanger consisting of thin walled tubing with a 'goose neck' bend provides a simple, effective means of cooling the sample as well as excellent thermal isolation of the sample holder from the coolant reservoir during controlled anneals. The addition of a vane-type vacuum valve, optical windows, and a rotatable tailpiece facilitates the study of optical properties of materials following low temperature ion implantation. (author)

  11. Radial convection of finite ion temperature, high amplitude plasma blobs

    DEFF Research Database (Denmark)

    Wiesenberger, M.; Madsen, Jens; Kendl, Alexander

    2014-01-01

    We present results from simulations of seeded blob convection in the scrape-off-layer of magnetically confined fusion plasmas. We consistently incorporate high fluctuation amplitude levels and finite Larmor radius (FLR) effects using a fully nonlinear global gyrofluid model. This is in line......-field transport compared to blobs simulated with the local model. The maximal blob amplitude is significantly higher in the global simulations than in the local ones. When the ion temperature is comparable to the electron temperature, global blob simulations show a reduced blob coherence and a decreased cross...

  12. Ion Exchange Temperature Testing with SRF Resin - 12088

    Energy Technology Data Exchange (ETDEWEB)

    Russell, R.L.; Rinehart, D.E.; Brown, G.N.; Peterson, R.A. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States)

    2012-07-01

    Ion exchange using the Spherical Resorcinol-Formaldehyde (SRF) resin has been selected by the U.S. Department of Energy's Office of River Protection for use in the Pretreatment Facility of the Hanford Tank Waste Treatment and Immobilization Plant (WTP) and for potential application in an at-tank deployment for removing Cs-137. Recent proposed changes to the WTP ion exchange process baseline indicate that higher temperatures (50 deg. C) to alleviate post-filtration precipitation issues prior to reaching the ion exchange columns may be required. Therefore, it is important to understand the behavior of SRF resin performance under the conditions expected with the new equipment and process changes. This research examined the impact of elevated temperature on resin loading and resin degradation during extended solution flow at elevated temperature (45 deg., 50 deg., 55 deg., 60 deg., 65 deg., 75 deg. C). Testing for extended times at elevated temperatures showed that the resin does degrade and loading capacity is reduced at and above 45 deg. C. Above 60 deg. C the resin appears to not load at all. It was observed that the resin disintegrated at 75 deg. C until not much was left and partially disintegrated at 65 deg. C, which caused the column to plug in both tests after ∼336 hours. The results indicate that WTP will lose resin loading capacity if the ion exchange process is performed above 25 deg. C, and the resin will disintegrate above 65 deg. C. Therefore, WTP will have a restricted operating range of temperatures to perform the ion exchange process with this resin. PNNL and WTP are currently evaluating the operating limits of the resin in further detail. Aging in 0.5 M HNO{sub 3} also caused the resin to lose capacity above 25 deg. C and to completely dissolve at 55 deg. C. Again, WTP will have a restricted operating range of temperatures when eluting the resin with nitric acid in order to maintain resin loading capacity and avoid disintegration of the resin

  13. Diagnostics and equipment for ion temperatures and implosion neutron yields

    International Nuclear Information System (INIS)

    Chen Jiabin; Zheng Zhijian; Peng Hansheng; Wen Shuhuai; Zhang Baohan; Ding Yongkun; Qi Lanying; Chen Ming; Li Chaoguang

    2001-01-01

    Fuel ion temperature is of great importance in the ICF research field. A set of ultra-fast quenched plastic scintillation detector system was fabricated for low yield neutron diagnostic. The detection efficiency and the sensitivity to DT neutrons were scaled using a K-400 accelerator and a pulse neutron tube from Russia with a width 5 - 10 ns, respectively. Its time response functions were calibrated by cosmic ray and implosion neutron separately. Under the conditions of low laser energy so low neutron yield and very limited space, fuel ion temperatures (including implosion neutron yields at the same time) were obtained. The measured ion temperatures for exploding pusher capsules were between 4 keV and 5 keV with errors +-(15 - 25)%. The neutron yields were 5 x 10 8 - 3 x 10 9 for exploding pusher capsules and 1.6 x 10 7 - 3.9 x 10 8 for ablation ones with errors +- (7 - 10)%. Of the six shots of neutron yields calculated, five are in good agreement with authors' experimental results in the range of +- 20%. Not only the heat-conducting mechanism and the effects on implosion of the energy balance of each path of incidence laser, target design, fuel mixture as well as hot electron behavior have been investigated, but also the upgrade level of the laser facility Shengguang II has been tested

  14. Optimization of energy and fluence of N{sub 2}{sup +} ions in the conversion of Al{sub 2}O{sub 3} surface into AlN at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Praveen, E-mail: praiitr@gmail.com [Center for Nanoscience and Nanotechnology, Panjab University, Chandigarh 160014 (India); Devi, Pooja [Central Scientific Instruments Organization, Sector-30 C, Chandigarh 160030 (India); Kumar, Mahesh [Physics of Energy and Harvesting group, National Physical Laboratory, New Delhi 110012 (India); Shivaprasad, S.M. [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

    2016-01-15

    Graphical abstract: We present a systematic study of energetic N{sub 2}{sup +} ions (0.1–5 keV) interaction with clean c-plane Al{sub 2}O{sub 3} surface in situ in a UHV system equipped with X-ray Photoelectron Spectroscopy at room temperature. Results show that maximum thickness of surface is nitride by 5 keV N{sub 2}{sup +} ion with an optimal fluence of 1.5 × 10{sup 15} ions/cm{sup 2}. This modified surface can be used as a template for low defect III-nitrides growth, with enhanced lattice matching than on bare c-Al{sub 2}O{sub 3}. - Highlights: • A mechanism for the formation of AlN on Al{sub 2}O{sub 3}. • Investigation of optimal energy and fluence for energetic N{sub 2}{sup +} ions. • AlN formation at room temperature on Al{sub 2}O{sub 3}. - Abstract: The work presents a systematic study of energetic N{sub 2}{sup +} ion interaction with the clean Al{sub 2}O{sub 3} surface at room temperature. Energetic N{sub 2}{sup +} ions with energies ranging from 0.1 to 5 keV were bombarded onto the c-plane Al{sub 2}O{sub 3} surface in situ in a UHV system equipped with X-ray Photoelectron Spectroscopy. Survey scans and core level spectra of Al(2p), O(1s), N(1s) were recorded as a function of ion fluence. Survey scans of XPS are used for the compositional analysis, while deconvoluted core level spectra are used to identify the evolution of the chemical bonding. Energetic dependence of N{sub 2}{sup +} ions occupying interstitial and substitutional sites in Al{sub 2}O{sub 3} lattice are probed to follow the surface evolution. Results show that maximum thickness of surface is nitride by 5 keV N{sub 2}{sup +} ion with an optimal fluence of 1.5 × 10{sup 15} ions/cm{sup 2}. This modified surface can be used as a template for low defect III-nitrides growth, with enhanced lattice matching than on bare c-Al{sub 2}O{sub 3}.

  15. The influence of powder composition and sintering temperature on transformation kinetics, structure and mechanical properties of hot-pressed silicon nitride

    International Nuclear Information System (INIS)

    Knoch, H.; Ziegler, G.

    1977-01-01

    The strength at room temperature of hot-pressed silicon nitride is strongly dependent on the structure which in turn depends on powder composition and process parameters. Connections between production conditions (MgO content, pressing temperature, pressing time), structure (α/β content and morphology), and the properties at room temperature are discussed. The growth of oblong β grains - as a direct result of phase transition from α- to β-Si 3 N 4 - results in microstructural meshing and thus in a higher strength. Optimum mechanical properties are achieved after full phase transformation and with a microstructure as fine as possible. The direct connection between strength and transformed β fraction indicates a possible way for a relatively fast determination of optimum properties for a given initial powder. (orig.) [de

  16. 2D Layered Graphitic Carbon Nitride Sandwiched with Reduced Graphene Oxide as Nanoarchitectured Anode for Highly Stable Lithium-ion Battery

    International Nuclear Information System (INIS)

    M Subramaniyam, Chandrasekar; Deshmukh, Kavita A.; Tai, Zhixin; Mahmood, Nasir; Deshmukh, Abhay D.; Goodenough, John B.; Dou, Shi Xue; Liu, Hua Kun

    2017-01-01

    Two dimensional (2D) nanomaterials with high gravimetric capacity and rate capability are a key strategy for the anode of a Li-ion battery, but they still pose a challenge for Li-ion storage due to limited conductivity and an inability to alleviate the volume change upon lithiation and delithiation. In this paper, we report the construction of a 3D architecture anode consisting of exfoliated 2D layered graphitic carbon nitride (g-C_3N_4) and reduced graphene oxide (rGO) nanosheets (CN-rGO) by hydrothermal synthesis. First, bulk g-C_3N_4 is converted to nanosheets to increase the edge density of the inert basal planes since the edges act as active Li-storage sites. This unique 3D architecture, which consists of ultrathin g-C_3N_4 nanosheets sandwiched between conductive rGO networks, exhibits a capacity of 970 mA h g"−"1 after 300 cycles, which is 15 fold higher than the bulk g-C_3N_4. The tuning of the intrinsic structural properties of bulk g-C_3N_4 by this simple bottom-up synthesis has rendered a 3D architectured material (CN-rGO) as an effective negative electrode for high energy storage applications.

  17. Structural and corrosion characterization of hydroxyapatite/zirconium nitride-coated AZ91 magnesium alloy by ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kiahosseini, Seyed Rahim, E-mail: rkiahoseyni@yahoo.com [Young Researchers and Elite Club, Damghan Branch, Islamic Azad University, Damghan (Iran, Islamic Republic of); Afshar, Abdollah [Department of Material Science and Engineering, Sharif University of Technology, Tehran (Iran, Islamic Republic of); Mojtahedzadeh Larijani, Majid [Radiation Applications Research School, Nuclear Science and Technology Research Institute, Tehran (Iran, Islamic Republic of); Yousefpour, Mardali [Faculty of Materials and Metallurgical Engineering, Semnan University, Semnan, 35131-19111 (Iran, Islamic Republic of)

    2017-04-15

    Highlights: • The thickness of HA coatings increase by ion beam sputtering time. • The residual strain in HA structure decrease by deposition time increment. • Crystallite size of HA coatings increase by deposition time increment. • The best corrosion resistance occurs at intermediate deposition time. - Abstract: The adhesion of hydroxyapatite (HA) as a coating for the AZ91 magnesium alloy substrate can be improved by using the sputtering method and an intermediate layer, such as ZrN. In this study, HA coatings were applied on ZrN intermediate layers at a temperature of 300 °C for 180, 240, 300, 360, and 420 min by ion beam sputtering. A profilometer device was used to study the HA coating thickness, which changed from 2 μm for the 180-min deposition to 4.7 μm for 420-min deposition. The grazing incidence X-ray diffraction analysis method and the Williamson–Hall analysis were used for structural investigation. As the deposition time increased, the crystalline size increased from 50 nm to 690 nm. However, given sufficient time for stress relief on the coating structure, the lattice strain values were close to zero. Energy-dispersive X-ray spectroscopy results showed that the Ca/P ratio ranged from 1.73 to 1.81. The external indentation method was used to evaluate the coating adhesion to the substrate. The slope of curve for applied force changes versus the radius of cracks in the coating (dP/dr) varied in the range of 0.2–0.07 by the deposition time, indicating that the adhesion increased with the increase in coating thickness. The potentiodynamic polarization technique was used to study the corrosion behavior. With increasing deposition time, the corrosion potential of samples did not show a significant change, and the corrosion potential of all samples (coated and uncoated substrates) was more positive than approximately 55 mV. When the deposition time increased to 360 min, the corrosion current density decreased from 5.5 μA/cm{sup 2} to 0.33

  18. Ion-ion dynamic structure factor, acoustic modes, and equation of state of two-temperature warm dense aluminum

    Science.gov (United States)

    Harbour, L.; Förster, G. D.; Dharma-wardana, M. W. C.; Lewis, Laurent J.

    2018-04-01

    The ion-ion dynamical structure factor and the equation of state of warm dense aluminum in a two-temperature quasiequilibrium state, with the electron temperature higher than the ion temperature, are investigated using molecular-dynamics simulations based on ion-ion pair potentials constructed from a neutral pseudoatom model. Such pair potentials based on density functional theory are parameter-free and depend directly on the electron temperature and indirectly on the ion temperature, enabling efficient computation of two-temperature properties. Comparison with ab initio simulations and with other average-atom calculations for equilibrium aluminum shows good agreement, justifying a study of quasiequilibrium situations. Analyzing the van Hove function, we find that ion-ion correlations vanish in a time significantly smaller than the electron-ion relaxation time so that dynamical properties have a physical meaning for the quasiequilibrium state. A significant increase in the speed of sound is predicted from the modification of the dispersion relation of the ion acoustic mode as the electron temperature is increased. The two-temperature equation of state including the free energy, internal energy, and pressure is also presented.

  19. Effect of ion nitriding on the crystal structure of 3 mol% Y2O3-doped ZrO2 thin-films prepared by the sol-gel method

    International Nuclear Information System (INIS)

    Ortiz, A.L.; Diaz-Parralejo, A.; Borrero-Lopez, O.; Guiberteau, F.

    2006-01-01

    We investigated the effect of ion nitriding on the crystal structure of 3 mol% Y 2 O 3 -doped ZrO 2 (3YSZ) thin-films prepared by the sol-gel method. For this purpose, we used X-ray diffractometry to determine the crystalline phases, the lattice parameters, the crystal sizes, and the lattice microstrains, and glow discharge-optical emission spectroscopy to obtain the depth profiles of the elemental chemical composition. We found that nitrogen atoms substitute oxygen atoms in the 3YSZ crystal, thus leading to the formation of unsaturated-substitutional solid solutions with reduced lattice parameters and Zr 0.94 Y 0.06 O 1.72 N 0.17 stoichiometric formula. We also found that ion nitriding does not affect the grain size, but does generate lattice microstrains due to the increase in point defects in the crystalline lattice

  20. Nitride alloy layer formation of duplex stainless steel using nitriding process

    Science.gov (United States)

    Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

    2018-01-01

    Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

  1. Study of ion cyclotron fluctuations. Application to the measurement of the ion temperature

    International Nuclear Information System (INIS)

    Lehner, T.

    1982-02-01

    A diagnostic technique for measuring the ion temperature of tokamak-type plasmas was developed. A theoretical study was made of the form factor associated with the ion cyclotron waves; the influence of Te/Ti on the frequency of the extrema of the dispersion relations was demonstrated. The different effects able to modify the spectral density (in particular the drift velocity and the impurities) were investigated. The mechanisms of suprathermal excitation of cylotron waves in tokamaks were reviewed together with the various effects stabilizing the spectrum: collisions, shear of the magnetic field lines. The experimental realization of the diagnostic technique is based on Thomson scattering by the electron density fluctuations [fr

  2. Constituent Ion Temperatures Measured in the Topside Ionosphere

    Science.gov (United States)

    Hsu, C. T.; Heelis, R. A.

    2017-12-01

    Plasma temperatures in the ionosphere are associated with both the dynamics and structure of the neutral and charge particles. The temperatures are determined by solar energy inputs and energy exchange between charged particles and neutrals. Previous observations show that during daytime the O+ temperature is generally higher when the fractional contribution of H+ to the plasma is high. Further simulations confirm that the daytime heat balance between the H+ and O+ always keeps the H+ at a temperature higher than the O+. In addition the plasma transport parallel and perpendicular to the magnetic field influences the plasma temperature through adiabatic heating and cooling effects. These processes are also important during the nighttime, when the source of photoionization is absent. In this work we examine a more sophisticated analysis procedure to extract individual mass dependent ion temperature and apply it on the DMSP F15 RPA measurements. The result shows that the daytime TH+ is a few hundred degrees higher than the TO+ and the nighttime temperature difference between TH+ and TO+ is indicative of mass dependent adiabatic heating and cooling processes across the equatorial region.

  3. Ion temperature profiles along a hydrogen diagnostic beam in a TORE SUPRA tokamak plasma

    International Nuclear Information System (INIS)

    Romannikov, A.; Petrov, Yu.; Platts, P.; Khess, V.; Khutter, T.; Farzhon, Zh.; Moro, F.

    2002-01-01

    By means of corpuscular diagnostics one studies temperature of ions along a diagnostic hydrogen beam. Paper presents comparison of temperature of plasma (deuterium) basic ions measures by means of the active corpuscular diagnostics with temperature of C + carbon ions along a beam. One studies behavior peculiarities of T i ion temperature profiles for TORE-SUPRA different modes, such as: formation of plane and even hollow T i profiles for ohmic modes, variation of T i profiles under operation of an ergodic diverter, difference of temperature of basic ions measured by means of the active corpuscular diagnostics from C +5 temperature. Paper offers clear explanation of these peculiarities [ru

  4. Fluid simulations of toroidal ion temperature gradient turbulence

    International Nuclear Information System (INIS)

    Sandberg, I.; Isliker, H.; Pavlenko, V.P.; Hizanidis, K.; Vlahos, L.

    2006-01-01

    The evolution of the toroidal ion temperature gradient mode instability is numerically studied by using the equations based on the standard reactive fluid model. The long-term dynamics of the instability are investigated using random-phase, small-amplitude fluctuations for initial conditions. The main events during the evolution of the instability that lead to the formation of large-scale coherent structures are described and the role of the dominant nonlinearities is clarified. The polarization drift nonlinearity leads to the inverse energy cascade while the convective ion heat nonlinearity is responsible for the saturation of the instability. Finally, the sensitivity of the saturated state to the initial plasma conditions is examined

  5. Ion-driven deuterium permeation through tungsten at high temperatures

    Science.gov (United States)

    Gasparyan, Yu. M.; Golubeva, A. V.; Mayer, M.; Pisarev, A. A.; Roth, J.

    2009-06-01

    The ion-driven permeation (IDP) through 50 μm thick pure tungsten foils was measured in the temperature range of 823-923 K during irradiation by 200 eV/D + ion beam with a flux of 10 17-10 18 D/m 2s. Gas driven permeation (GDP) from the deuterium background gas was observed as well. Calculations using both the analytical formula for the diffusion limited regime (DLR) and the TMAP 7 code gave good agreement with the experimental data. Defects with a detrapping energy of (2.05 ± 0.15) eV were found to limit the permeation lag time in our experimental conditions.

  6. Ion-driven deuterium permeation through tungsten at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Gasparyan, Yu.M., E-mail: yury.gasparyan@ipp.mpg.d [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmanstrasse 2, D-85748 Garching (Germany); Moscow Engineering and Physics Institute, Kashirskoe sh. 31, Moscow 115409 (Russian Federation); Golubeva, A.V. [RRC ' Kurchatov Institute' , Ac. Kurchatov sq., 1/1, Moscow RU-123182 (Russian Federation); Mayer, M. [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmanstrasse 2, D-85748 Garching (Germany); Pisarev, A.A. [Moscow Engineering and Physics Institute, Kashirskoe sh. 31, Moscow 115409 (Russian Federation); Roth, J. [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmanstrasse 2, D-85748 Garching (Germany)

    2009-06-15

    The ion-driven permeation (IDP) through 50 mum thick pure tungsten foils was measured in the temperature range of 823-923 K during irradiation by 200 eV/D{sup +} ion beam with a flux of 10{sup 17}-10{sup 18} D/m{sup 2}s. Gas driven permeation (GDP) from the deuterium background gas was observed as well. Calculations using both the analytical formula for the diffusion limited regime (DLR) and the TMAP 7 code gave good agreement with the experimental data. Defects with a detrapping energy of (2.05 +- 0.15) eV were found to limit the permeation lag time in our experimental conditions.

  7. Ion-driven deuterium permeation through tungsten at high temperatures

    International Nuclear Information System (INIS)

    Gasparyan, Yu.M.; Golubeva, A.V.; Mayer, M.; Pisarev, A.A.; Roth, J.

    2009-01-01

    The ion-driven permeation (IDP) through 50 μm thick pure tungsten foils was measured in the temperature range of 823-923 K during irradiation by 200 eV/D + ion beam with a flux of 10 17 -10 18 D/m 2 s. Gas driven permeation (GDP) from the deuterium background gas was observed as well. Calculations using both the analytical formula for the diffusion limited regime (DLR) and the TMAP 7 code gave good agreement with the experimental data. Defects with a detrapping energy of (2.05 ± 0.15) eV were found to limit the permeation lag time in our experimental conditions.

  8. High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Hernandez-Balderrama, Luis H.; Haidet, Brian B.; Alden, Dorian; Franke, Alexander; Sarkar, Biplab; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Hayden Breckenridge, M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); REU, Physics Department at Wofford College, Spartanburg, South Carolina 29303 (United States)

    2016-04-14

    In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that at free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.

  9. Wide-Temperature Electrolytes for Lithium-Ion Batteries.

    Science.gov (United States)

    Li, Qiuyan; Jiao, Shuhong; Luo, Langli; Ding, Michael S; Zheng, Jianming; Cartmell, Samuel S; Wang, Chong-Min; Xu, Kang; Zhang, Ji-Guang; Xu, Wu

    2017-06-07

    Formulating electrolytes with solvents of low freezing points and high dielectric constants is a direct approach to extend the service-temperature range of lithium (Li)-ion batteries (LIBs). In this study, we report such wide-temperature electrolyte formulations by optimizing the ethylene carbonate (EC) content in the ternary solvent system of EC, propylene carbonate (PC), and ethyl methyl carbonate (EMC) with LiPF 6 salt and CsPF 6 additive. An extended service-temperature range from -40 to 60 °C was obtained in LIBs with lithium nickel cobalt aluminum oxide (LiNi 0.80 Co 0.15 Al 0.05 O 2 , NCA) as cathode and graphite as anode. The discharge capacities at low temperatures and the cycle life at room temperature and elevated temperatures were systematically investigated together with the ionic conductivity and phase-transition behaviors. The most promising electrolyte formulation was identified as 1.0 M LiPF 6 in EC-PC-EMC (1:1:8 by wt) with 0.05 M CsPF 6 , which was demonstrated in both coin cells of graphite∥NCA and 1 Ah pouch cells of graphite∥LiNi 1/3 Mn 1/3 Co 1/3 O 2 . This optimized electrolyte enables excellent wide-temperature performances, as evidenced by the high capacity retention (68%) at -40 °C and C/5 rate, significantly higher than that (20%) of the conventional LIB electrolyte, and the nearly identical stable cycle life as the conventional LIB electrolyte at room temperature and elevated temperatures up to 60 °C.

  10. Effect of Plasma Nitriding Process Conditions on Corrosion Resistance of 440B Martensitic Stainless Steel

    Directory of Open Access Journals (Sweden)

    Łępicka Magdalena

    2014-09-01

    Full Text Available Martensitic stainless steels are used in a large number of various industrial applications, e.g. molds for plastic injections and glass moldings, automotive components, cutting tools, surgical and dental instruments. The improvement of their tribological and corrosion properties is a problem of high interest especially in medical applications, where patient safety becomes a priority. The paper covers findings from plasma nitrided AISI 440B (PN-EN or DIN X90CrMoV18 stainless steel corrosion resistance studies. Conventionally heat treated and plasma nitrided in N2:H2 reaction gas mixture (50:50, 65:35 and 80:20, respectively in two different temperature ranges (380 or 450°C specimens groups were examined. Microscopic observations and electrochemical corrosion tests were performed using a variety of analytical techniques. As obtained findings show, plasma nitriding of AISI 440B stainless steel, regardless of the process temperature, results in reduction of corrosion current density. Nevertheless, applying thermo-chemical process which requires exceeding temperature of about 400°C is not recommended due to increased risk of steel sensitization to intergranular and stress corrosion. According to the results, material ion nitrided in 450°C underwent leaching corrosion processes, which led to significant disproportion in chemical composition of the corroded and corrosion-free areas. The authors suggest further research into corrosion process of plasma nitrided materials and its degradation products.

  11. Topotactic synthesis of vanadium nitride solid foams

    International Nuclear Information System (INIS)

    Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

    1993-01-01

    Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

  12. Microstructural evolution of nanochannel CrN films under ion irradiation at elevated temperature and post-irradiation annealing

    Science.gov (United States)

    Tang, Jun; Hong, Mengqing; Wang, Yongqiang; Qin, Wenjing; Ren, Feng; Dong, Lan; Wang, Hui; Hu, Lulu; Cai, Guangxu; Jiang, Changzhong

    2018-03-01

    High-performance radiation tolerance materials are crucial for the success of future advanced nuclear reactors. In this paper, we present a further investigation that the "vein-like" nanochannel films can enhance radiation tolerance under ion irradiation at high temperature and post-irradiation annealing. The chromium nitride (CrN) nanochannel films with different nanochannel densities and the compact CrN film are chosen as a model system for these studies. Microstructural evolution of these films were investigated using Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Elastic Recoil Detection (ERD) and Grazing Incidence X-ray Diffraction (GIXRD). Under the high fluence He+ ion irradiation at 500 °C, small He bubbles with low bubble densities are observed in the irradiated nanochannel CrN films, while the aligned large He bubbles, blistering and texture reconstruction are found in the irradiated compact CrN film. For the heavy Ar2+ ion irradiation at 500 °C, the microstructure of the nanochannel CrN RT film is more stable than that of the compact CrN film due to the effective releasing of defects via the nanochannel structure. Under the He+ ion irradiation and subsequent annealing, compared with the compact film, the nanochannel films have excellent performance for the suppression of He bubble growth and possess the strong microstructural stability. Basing on the analysis on the sizes and number densities of bubbles as well as the concentrations of He retained in the nanochannel CrN films and the compact CrN film under different experimental conditions, potential mechanism for the enhanced radiation tolerance are discussed. Nanochannels play a crucial role on the release of He/defects under ion irradiation. We conclude that the tailored "vein-like" nanochannel structure may be used as advanced radiation tolerance materials for future nuclear reactors.

  13. Different shape normal metal interlayers between niobium based SIS junctions and niobium titanium nitride leads and their influence on the electron temperature

    International Nuclear Information System (INIS)

    Selig, S; Westig, M P; Jacobs, K; Honingh, C E

    2014-01-01

    In this paper we demonstrate the reduction of heating in a niobium superconductor-insulator-superconductor (SIS) junction with aluminum-oxide tunnel barrier embedded in a niobium-titanium-nitride circuit. Nonequilibrium quasiparticles which are created due to the Andreev trap at the interface between the niobium and the niobium-titanium-nitride layers are relaxed by inserting a normal-metal conductor of gold between these two layers. In an earlier work we explained the observed relaxation of nonequilibrium quasiparticles due to the geometrically assisted cooling effect. In this paper we investigate this cooling effect in dependence of the normal-metal layer shape and size. We expect that an adapted normal-metal layer is necessary for implementation in practical terahertz SIS heterodyne mixer circuits. We observe in DC-measurements of a large number of devices a clear relation between the volume of the gold layer and the effective electron temperature in the device. Our central finding is that the shape of the gold layer does not influence the cooling provided that the volume is sufficient.

  14. Fabrication of vanadium nitride by carbothermal nitridation reaction

    International Nuclear Information System (INIS)

    Wang Xitang; Wang Zhuofu; Zhang Baoguo; Deng Chengji

    2005-01-01

    Vanadium nitride is produced from V 2 O 5 by carbon-thermal reduction and nitridation. When the sintered temperature is above 1273 K, VN can be formed, and the nitrogen content of the products increased with the firing temperature raised, and then is the largest when the sintered temperature is 1573 K. The C/V 2 O 5 mass ratio of the green samples is the other key factor affecting on the nitrogen contents of the products. The nitrogen content of the products reaches the most when the C/V 2 O 5 mass ratio is 0.33, which is the theoretical ratio of the carbothermal nitridation of V 2 O 5 . (orig.)

  15. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  16. Ion temperature gradient modes in toroidal helical systems

    Energy Technology Data Exchange (ETDEWEB)

    Kuroda, T. [Graduate University for Advanced Studies, Toki, Gifu (Japan); Sugama, H.; Kanno, R.; Okamoto, M.

    2000-04-01

    Linear properties of ion temperature gradient (ITG) modes in helical systems are studied. The real frequency, growth rate, and eigenfunction are obtained for both stable and unstable cases by solving a kinetic integral equation with proper analytic continuation performed in the complex frequency plane. Based on the model magnetic configuration for toroidal helical systems like the Large Helical Device (LHD), dependences of the ITG mode properties on various plasma equilibrium parameters are investigated. Particularly, relative effects of {nabla}B-curvature drifts driven by the toroidicity and by the helical ripples are examined in order to compare the ITG modes in helical systems with those in tokamaks. (author)

  17. Ion temperature gradient modes in toroidal helical systems

    International Nuclear Information System (INIS)

    Kuroda, T.; Sugama, H.; Kanno, R.; Okamoto, M.

    2000-04-01

    Linear properties of ion temperature gradient (ITG) modes in helical systems are studied. The real frequency, growth rate, and eigenfunction are obtained for both stable and unstable cases by solving a kinetic integral equation with proper analytic continuation performed in the complex frequency plane. Based on the model magnetic configuration for toroidal helical systems like the Large Helical Device (LHD), dependences of the ITG mode properties on various plasma equilibrium parameters are investigated. Particularly, relative effects of ∇B-curvature drifts driven by the toroidicity and by the helical ripples are examined in order to compare the ITG modes in helical systems with those in tokamaks. (author)

  18. Temperature Activated Diffusion of Radicals through Ion Implanted Polymers

    DEFF Research Database (Denmark)

    Wakelin, Edgar A.; Davies, Michael J.; Bilek, Marcela M. M.

    2015-01-01

    Plasma immersion ion implantation (PIII) is a promising technique for immobilizing biomolecules on the surface of polymers. Radicals generated in a subsurface layer by PIII treatment diffuse throughout the substrate, forming covalent bonds to molecules when they reach the surface. Understanding...... to the surface. The model makes useful predictions for the lifetime over which the surface is sufficiently active to covalently immobilize biomolecules and it can be used to determine radical fluence during biomolecule incubation for a range of storage and incubation temperatures so facilitating selection...

  19. Effects of positron density and temperature on large amplitude ion-acoustic waves in an electron-positron-ion plasma

    International Nuclear Information System (INIS)

    Nejoh, Y.N.

    1997-01-01

    The nonlinear wave structures of large amplitude ion-acoustic waves are studied in a plasma with positrons. We have presented the region of existence of the ion-acoustic waves by analysing the structure of the pseudopotential. The region of existence sensitively depends on the positron to electron density ratio, the ion to electron mass ratio and the positron to electron temperature ratio. It is shown that the maximum Mach number increases as the positron temperature increases and the region of existence of the ion-acoustic waves spreads as the positron temperature increases. 12 refs., 6 figs

  20. Deposition of single-layer and graded aluminum nitride coatings on vanadium substrates using ion-beam assisted reactive evaporation (ITER task no. ETA-EC-BLR26)

    International Nuclear Information System (INIS)

    Jamarani, F.; Lang, R.; Owles, R.

    1994-06-01

    The objective of the project has been to develop a reactive evaporation process for the fabrication of aluminum nitride coatings on pure vanadium substrates. The aluminum nitride coatings are to be used as electrical insulators on the surfaces of structural materials in contact with liquid metal coolants. (author). 9 refs., 2 tabs., 5 figs

  1. Computer Simulation Studies of Ion Channels at High Temperatures

    Science.gov (United States)

    Song, Hyun Deok

    The gramicidin channel is the smallest known biological ion channel, and it exhibits cation selectivity. Recently, Dr. John Cuppoletti's group at the University of Cincinnati showed that the gramicidin channel can function at high temperatures (360 ˜ 380K) with significant currents. This finding may have significant implications for fuel cell technology. In this thesis, we have examined the gramicidin channel at 300K, 330K, and 360K by computer simulation. We have investigated how the temperature affects the current and differences in magnitude of free energy between the two gramicidin forms, the helical dimer (HD) and the double helix (DH). A slight decrease of the free energy barrier inside the gramicidin channel and increased diffusion at high temperatures result in an increase of current. An applied external field of 0.2V/nm along the membrane normal results in directly observable ion transport across the channels at high temperatures for both HD and DH forms. We found that higher temperatures also affect the probability distribution of hydrogen bonds, the bending angle, the distance between dimers, and the size of the pore radius for the helical dimer structure. These findings may be related to the gating of the gramicidin channel. Methanococcus jannaschii (MJ) is a methane-producing thermophile, which was discovered at a depth of 2600m in a Pacific Ocean vent in 1983. It has the ability to thrive at high temperatures and high pressures, which are unfavorable for most life forms. There have been some experiments to study its stability under extreme conditions, but still the origin of the stability of MJ is not exactly known. MJ0305 is the chloride channel protein from the thermophile MJ. After generating a structure of MJ0305 by homology modeling based on the Ecoli ClC templates, we examined the thermal stability, and the network stability from the change of network entropy calculated from the adjacency matrices of the protein. High temperatures increase the

  2. Coupled ion temperature gradient and trapped electron mode to electron temperature gradient mode gyrokinetic simulations

    International Nuclear Information System (INIS)

    Waltz, R. E.; Candy, J.; Fahey, M.

    2007-01-01

    Electron temperature gradient (ETG) transport is conventionally defined as the electron energy transport at high wave number (high-k) where ions are adiabatic and there can be no ion energy or plasma transport. Previous gyrokinetic simulations have assumed adiabatic ions (ETG-ai) and work on the small electron gyroradius scale. However such ETG-ai simulations with trapped electrons often do not have well behaved nonlinear saturation unless fully kinetic ions (ki) and proper ion scale zonal flow modes are included. Electron energy transport is separated into ETG-ki at high-k and ion temperature gradient-trapped electron mode (ITG/TEM) at low-k. Expensive (more computer-intensive), high-resolution, large-ion-scale flux-tube simulations coupling ITG/TEM and ETG-ki turbulence are presented. These require a high effective Reynolds number R≡[k(max)/k(min)] 2 =μ 2 , where μ=[ρ si /ρ si ] is the ratio of ion to electron gyroradii. Compute times scale faster than μ 3 . By comparing the coupled expensive simulations with (1) much cheaper (less compute-intensive), uncoupled, high-resolution, small, flux-tube ETG-ki and with (2) uncoupled low-resolution, large, flux-tube ITG/TEM simulations, and also by artificially turning ''off'' the low-k or high-k drives, it appears that ITG/TEM and ETG-ki transport are not strongly coupled so long as ETG-ki can access some nonadiabatic ion scale zonal flows and both high-k and low-k are linearly unstable. However expensive coupled simulations are required for physically accurate k-spectra of the transport and turbulence. Simulations with μ≥30 appear to represent the physical range μ>40. ETG-ki transport measured in ion gyro-Bohm units is weakly dependent on μ. For the mid-radius core tokamak plasma parameters studied, ETG-ki is about 10% of the electron energy transport, which in turn is about 30% of the total energy transport (with negligible ExB shear). However at large ExB shear sufficient to quench the low-k ITG

  3. Temperature dependence of the optical properties of ion-beam sputtered ZrN films

    Energy Technology Data Exchange (ETDEWEB)

    Larijani, M.M. [NSTRI, AEOI, Radiation Applications Research School, Karaj (Iran, Islamic Republic of); Kiani, M. [Azad University, South Tehran Branch, Department of Physics, Tehran (Iran, Islamic Republic of); Jafari-Khamse, E. [NSTRI, AEOI, Radiation Applications Research School, Karaj (Iran, Islamic Republic of); University of Kashan, Department of Physics, Kashan (Iran, Islamic Republic of); Fathollahi, V. [Nuclear Science Research School, NSTRI, Tehran (Iran, Islamic Republic of)

    2014-11-15

    The reflectivity of sputtered Zirconium nitride films on glass substrate has been investigated in the spectral energy range of 0.8-6.1 eV as a function of deposition temperature varying between 373 and 723 K. Optical constants of the prepared films have been determined using the Drude analysis. Experimental results showed strong dependency of optical properties of the films, such as optical resistivity on the substrate temperature. The temperature increase of the substrate has shown an increase in both the plasmon frequency and electron scattering time. The electrical behavior of the films showed a good agreement between their optical and electrical resistivity. (orig.)

  4. Limits on the ions temperature anisotropy in turbulent intracluster medium

    Energy Technology Data Exchange (ETDEWEB)

    Santos-Lima, R. [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany); Potsdam Univ. (Germany). Inst. fuer Physik und Astronomie; Univ. de Sao Paulo (Brazil). Inst. de Astronomia, Geofisica e Ciencias Atmosfericas; Yan, H. [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany); Potsdam Univ. (Germany). Inst. fuer Physik und Astronomie; Gouveia Dal Pino, E.M. de [Univ. de Sao Paulo (Brazil). Inst. de Astronomia, Geofisica e Ciencias Atmosfericas; Lazarian, A. [Wisconsin Univ., Madison, WI (United States). Dept. of Astronomy

    2016-05-15

    Turbulence in the weakly collisional intracluster medium of galaxies (ICM) is able to generate strong thermal velocity anisotropies in the ions (with respect to the local magnetic field direction), if the magnetic moment of the particles is conserved in the absence of Coulomb collisions. In this scenario, the anisotropic pressure magnetohydrodynamic (AMHD) turbulence shows a very different statistical behaviour from the standard MHD one and is unable to amplify seed magnetic fields, in disagreement with previous cosmological MHD simulations which are successful to explain the observed magnetic fields in the ICM. On the other hand, temperature anisotropies can also drive plasma instabilities which can relax the anisotropy. This work aims to compare the relaxation rate with the growth rate of the anisotropies driven by the turbulence. We employ quasilinear theory to estimate the ions scattering rate due to the parallel firehose, mirror, and ion-cyclotron instabilities, for a set of plasma parameters resulting from AMHD simulations of the turbulent ICM. We show that the ICM turbulence can sustain only anisotropy levels very close to the instabilities thresholds. We argue that the AMHD model which bounds the anisotropies at the marginal stability levels can describe the Alfvenic turbulence cascade in the ICM.

  5. Boron lattice location in room temperature ion implanted Si crystal

    International Nuclear Information System (INIS)

    Piro, A.M.; Romano, L.; Mirabella, S.; Grimaldi, M.G.

    2005-01-01

    The B lattice location in presence of a Si-self-interstitial (I Si ) supersaturation, controlled by energetic proton bombardment, has been studied by means of ion channelling and massive Monte Carlo simulations. B-doped layers of Si crystals with a B concentration of 1 x 10 2 B/cm 3 were grown by Molecular Beam Epitaxy. Point defect engineering techniques, with light energetic ion implants, have been applied to generate an I Si uniform injection in the electrically active layer. The displacement of B atoms out of substitutional lattice sites was induced by 650 keV proton irradiations at room temperature (R.T.) and the resultant defect configuration was investigated by ion channelling and Nuclear Reaction Analysis (NRA) techniques. Angular scans were measured both through and axes along the (1 0 0) plane using the 11 B(p,α) 8 Be nuclear reaction at 650 keV proton energy. Monte Carlo simulated angular scans were calculated considering a variety of theoretical defect configurations, supported by literature, and compared with experimental data. Our experimental scans can be fitted by a linear combination of small (0.3 A) and large B displacements (1.25 A) along the direction, compatible with the B-dumbbell oriented along as proposed by ab initio calculations

  6. Wide-Temperature Electrolytes for Lithium-Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qiuyan; Jiao, Shuhong; Luo, Langli; Ding, Michael S.; Zheng, Jianming; Cartmell, Samuel S.; Wang, Chong-Min; Xu, Kang; Zhang, Ji-Guang; Xu, Wu

    2017-05-26

    Formulating electrolytes with solvents of low freezing points and high dielectric constants is a direct approach to extend the service temperature range of lithium (Li)-ion batteries (LIBs), for which propylene carbonate (PC), ethyl methyl carbonate (EMC), diethyl carbonate (DEC), methyl butyrate (MB) are excellent candidates. In this work, we report such low temperature electrolyte formulations by optimizing the content of ethylene carbonate (EC) in the EC-PC-EMC ternary solvent system with LiPF6 salt and CsPF6 additive. An extended service temperature range from 40°C to 60°C was obtained in LIBs with lithium nickel cobalt aluminum mixed oxide (LiNi0.80Co0.15Al0.05O2, NCA) as cathode and graphite as anode. The discharge capacities at low temperatures and the cycle life at room and elevated temperatures were systematically investigated in association with the ionic conductivity and phase transition behaviors. The most promising electrolyte formulation was identified as 1.0 M LiPF6 in EC-PC-EMC (1:1:8 by wt.) with 0.05 M CsPF6, which was demonstrated in both coin cells of graphite||NCA and 1 Ah pouch cells of graphite||LiNi1/3Mn1/3Co1/3O2. This optimized electrolyte enables excellent wide-temperature performances, as evidenced by the 68% capacity retention at 40C and C/5 rate, and nearly identical stable cycle life at room and elevated temperatures up to 60C.

  7. Rapid self-heating and internal temperature sensing of lithium-ion batteries at low temperatures

    International Nuclear Information System (INIS)

    Zhang, Guangsheng; Ge, Shanhai; Xu, Terrence; Yang, Xiao-Guang; Tian, Hua; Wang, Chao-Yang

    2016-01-01

    Highlights: • Self-heating lithium-ion battery (SHLB) structure provided a practical solution to the poor performance at subzero temperatures. • We report an improved SHLB that heats from −20 °C to 0 °C in 12.5 seconds, or 56% more rapidly, while consuming 24% less energy than previously reported. • The nickel foil heating element embedded inside a SHLB cell plays a dominant role in rapid self-heating. • The embedded nickel foil can simultaneously perform as an internal temperature sensor (ITS). • 2-sheet design self-heats faster than 1-sheet design due to more uniform internal temperature distribution. - Abstract: The recently discovered self-heating lithium-ion battery structure provided a practical solution to the poor performance at subzero temperatures that has hampered battery technology for decades. Here we report an improved self-heating lithium-ion battery (SHLB) that heats from −20 °C to 0 °C in 12.5 seconds, or 56% more rapidly, while consuming 24% less energy than that reported previously. We reveal that a nickel foil heating element embedded inside a SHLB cell plays a dominant role in self-heating and we experimentally demonstrate that a 2-sheet design can achieve dramatically accelerated self-heating due to more uniform internal temperature distribution. We also report, for the first time, that this embedded nickel foil can simultaneously perform as an internal temperature sensor (ITS) due to the perfectly linear relationship between the foil’s electrical resistance and temperature.

  8. Spontaneously-acoustic hypersound long-range stimulation of silicon nitride synthesis in silicon at argon ion irradiation

    CERN Document Server

    Demidov, E S; Markov, K A; Sdobnyakov, V V

    2001-01-01

    The work is dedicated to the nature of the average energy ions implantation process effect on the crystal defective system at the distances, exceeding by three-four orders the averagely projected ions run value. It is established that irradiation by the argon ions stimulated the Si sub 3 N sub 4 phase formation in the preliminarily nitrogen-saturated layers at the distances of approximately 600 mu m from the ions deceleration zone. It is supposed that there appear sufficiently effective pulse sources of the hypersonic shock waves in the area of the Ar sup + deceleration zone. These waves are the result of the jump-like origination and grid evolution of the loop-shaped dislocations and argon blisters as well as of the blisters explosion, The evaluations show that the peak pressure in wave due to the synchronized explosion of blisters in the nitrogen-saturated area on the reverse side of the silicon plate 600 mu m thick may exceed 10 sup 8 Pa and cause experimentally observed changes

  9. Radio frequency plasma nitriding of aluminium at higher power levels

    International Nuclear Information System (INIS)

    Gredelj, Sabina; Kumar, Sunil; Gerson, Andrea R.; Cavallaro, Giuseppe P.

    2006-01-01

    Nitriding of aluminium 2011 using a radio frequency plasma at higher power levels (500 and 700 W) and lower substrate temperature (500 deg. C) resulted in higher AlN/Al 2 O 3 ratios than obtained at 100 W and 575 deg. C. AlN/Al 2 O 3 ratios derived from X-ray photoelectron spectroscopic analysis (and corroborated by heavy ion elastic recoil time of flight spectrometry) for treatments preformed at 100 (575 deg. C), 500 (500 deg. C) and 700 W (500 deg. C) were 1.0, 1.5 and 3.3, respectively. Scanning electron microscopy revealed that plasma nitrided surfaces obtained at higher power levels exhibited much finer nodular morphology than obtained at 100 W

  10. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found......-product. A model, that combine the chemical net reaction and the stoichiometric rules, is found to agree with measured deposition rates for given material compositions. Effects of annealing in a nitrogen atmosphere has been investigated for the 400 °C– 1100 °C temperature range. It is observed that PECVD oxy...

  11. Review about laser nitriding of titanium alloys; Revision sobre nitruraciones laser de aleaciones de titanio

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Artieda, M.G.; Fernandez-Carrasquilla, J.

    2010-07-01

    A common technique used to improve the wear response of titanium alloys is to nitride the surface, using chemical or physical vapour deposition, ion implantation or surface remelting in a nitrogen atmosphere. In this revision nitriding systems with laser technology are studied, used in titanium alloys surface treatments.For high temperature, high strength applications, titanium based alloys are an attractive light-weight alternative to steel, due to their high strength to weight ratio and corrosion resistance. In applications that require good wear resistance, titanium alloys pose a problem due to their poor tribological characteristics.Titanium alloys used with a suitable nitriding treatment could allow the replacement of steel in different applications, obtaining weight savings in fabricated components. (Author). 68 refs.

  12. In-situ high temperature irradiation setup for temperature dependent structural studies of materials under swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Kulriya, P.K.; Kumari, Renu; Kumar, Rajesh; Grover, V.; Shukla, R.; Tyagi, A.K.; Avasthi, D.K.

    2015-01-01

    An in-situ high temperature (1000 K) setup is designed and installed in the materials science beam line of superconducting linear accelerator at the Inter-University Accelerator Centre (IUAC) for temperature dependent ion irradiation studies on the materials exposed with swift heavy ion (SHI) irradiation. The Gd 2 Ti 2 O 7 pyrochlore is irradiated using 120 MeV Au ion at 1000 K using the high temperature irradiation facility and characterized by ex-situ X-ray diffraction (XRD). Another set of Gd 2 Ti 2 O 7 samples are irradiated with the same ion beam parameter at 300 K and simultaneously characterized using in-situ XRD available in same beam line. The XRD studies along with the Raman spectroscopic investigations reveal that the structural modification induced by the ion irradiation is strongly dependent on the temperature of the sample. The Gd 2 Ti 2 O 7 is readily amorphized at an ion fluence 6 × 10 12 ions/cm 2 on irradiation at 300 K, whereas it is transformed to a radiation-resistant anion-deficient fluorite structure on high temperature irradiation, that amorphized at ion fluence higher than 1 × 10 13 ions/cm 2 . The temperature dependent ion irradiation studies showed that the ion fluence required to cause amorphization at 1000 K irradiation is significantly higher than that required at room temperature irradiation. In addition to testing the efficiency of the in-situ high temperature irradiation facility, the present study establishes that the radiation stability of the pyrochlore is enhanced at higher temperatures

  13. High-temperature oxidation of ion-implanted tantalum

    International Nuclear Information System (INIS)

    Kaufmann, E.N.; Musket, R.G.; Truhan, J.J.; Grabowski, K.S.; Singer, I.L.; Gossett, C.R.

    1982-01-01

    The oxidation of ion-implanted Ta in two different high temperature regimes has been studied. Oxidations were carried out at 500 0 C in Ar/O 2 mixtures, where oxide growth is known to follow a parabolic rate law in initial stages, and at 1000 0 C in pure O 2 , where a linear-rate behavior obtains. Implanted species include Al, Ce, Cr, Li, Si and Zr at fluences of the order of 10 17 /cm 2 . Oxidized samples were studied using Rutherford backscattering, nuclear reaction analysis, Auger spectroscopy, secondary-ion mass spectroscopy, x-ray diffraction and optical microscopy. Significant differences among the specimens were noted after the milder 500 0 C treatment, specifically, in the amount of oxide formed, the degree of oxygen dissolution in the metal beneath the oxide, and in the redistribution behavior of the implanted solutes. Under the severe 1000 0 C treatment, indications of different solute distributions and of different optical features were found, whereas overall oxidation rate appeared to be unaffected by the presence of the solute. 7 figures

  14. Plasma nitriding of steels

    CERN Document Server

    Aghajani, Hossein

    2017-01-01

    This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

  15. The Effect of Storm Driver and Intensity on Magnetospheric Ion Temperatures

    Science.gov (United States)

    Keesee, Amy M.; Katus, Roxanne M.; Scime, Earl E.

    2017-09-01

    Energy deposited in the magnetosphere during geomagnetic storms drives ion heating and convection. Ions are also heated and transported via internal processes throughout the magnetosphere. Injection of the plasma sheet ions to the inner magnetosphere drives the ring current and, thus, the storm intensity. Understanding the ion dynamics is important to improving our ability to predict storm evolution. In this study, we perform superposed epoch analyses of ion temperatures during storms, comparing ion temperature evolution by storm driver and storm intensity. The ion temperatures are calculated using energetic neutral atom measurements from the Two Wide-Angle Imaging Neutral-Atom Spectrometers (TWINS) mission. The global view of these measurements provide both spatial and temporal information. We find that storms driven by coronal mass ejections (CMEs) tend to have higher ion temperatures throughout the main phase than storms driven by corotating interaction regions (CIRs) but that the temperatures increase during the recovery phase of CIR-driven storms. Ion temperatures during intense CME-driven storms have brief intervals of higher ion temperatures than those during moderate CME-driven storms but have otherwise comparable ion temperatures. The highest temperatures during CIR-driven storms are centered at 18 magnetic local time and occur on the dayside for moderate CME-driven storms. During the second half of the main phase, ion temperatures tend to decrease in the postmidnight to dawn sector for CIR storms, but an increase is observed for CME storms. This increase begins with a sharp peak in ion temperatures for intense CME storms, likely a signature of substorm activity that drives the increased ring current.

  16. One-pot evaporation–condensation strategy for green synthesis of carbon nitride quantum dots: An efficient fluorescent probe for ion detection and bioimaging

    International Nuclear Information System (INIS)

    Yin, Ying; Zhang, Yumin; Gao, Tangling; Yao, Tai; Han, Jiecai; Han, Zhengbin; Zhang, Zhihua; Wu, Qiong; Song, Bo

    2017-01-01

    Herein, highly blue graphitic carbon nitride quantum dots (g-CNQDs) were synthesized by one-step microwave-assisted evaporation–condensation strategy using bulk g-C_3N_4 as the precursor within 5 min. In contrast with conventional chemical routes, the as-synthesized g-CNQDs exhibited a high crystalline quality, excellent fluorescence characteristics, and a narrow size distribution with an average diameter of 3.5 ± 0.5 nm. More importantly, by using a household microwave oven, this method has the advantages of wide accessibility, environmental friendliness, a high yield of ∼40%, and can be facilely synthesized in a large scale (scaled up to a gram scale). Notably, owing to the absence of any organic reagents, the blueas-prepared g-CNQDs show the excitation wavelength-independent photoluminescence (PL) behavior. Moreover, benefiting from the stable PL emission, good water solubility, and extraordinary biocompatibility with a high quantum yield of ∼17%, the fluorescent g-CNQDs can serve as a potential sensitive and selective probe for Fe"3"+ detection with a super low detection limit of 2 nM and an effective labeling agent for live-cell imaging. This work provides a unique opportunity to obtain g-CNQDs in large scale via a facile route, which may pave the way for the further design of g-CNQDs with other applications. - Highlights: • Green synthesis of g-CNQDs via one-step evaporation-condensation method. • The g-CNQDs have shown high crystalline quality and intrinsic fluorescence features. • The fluorescent g-CNQDs can serve as a sensitive and selective probe to detect Fe"3"+ ions with a low detection limit of 2 nM. • g-CNQDs can serve as an effective labeling agent for live-cell imaging with extraordinary biocompatibility.

  17. One-pot evaporation–condensation strategy for green synthesis of carbon nitride quantum dots: An efficient fluorescent probe for ion detection and bioimaging

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Ying; Zhang, Yumin [Center for Composite Materials, Harbin Institute of Technology, Harbin 150001 (China); Gao, Tangling [Institute of Petrochemistry, Heilongjiang Academy of Sciences, Harbin 150040 (China); Yao, Tai [Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001 (China); Han, Jiecai [Center for Composite Materials, Harbin Institute of Technology, Harbin 150001 (China); Han, Zhengbin, E-mail: hanzhengbin@hit.edu.cn [School of Life Science and Technology, Harbin Institute of Technology, Harbin 150001 (China); Zhang, Zhihua [Liaoning Key Materials Laboratory for Railway, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Wu, Qiong [School of Life Science and Technology, Harbin Institute of Technology, Harbin 150001 (China); Song, Bo, E-mail: songbo@hit.edu.cn [Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001 (China); Department of Physics, Harbin Institute of Technology, Harbin 150001 (China)

    2017-06-15

    Herein, highly blue graphitic carbon nitride quantum dots (g-CNQDs) were synthesized by one-step microwave-assisted evaporation–condensation strategy using bulk g-C{sub 3}N{sub 4} as the precursor within 5 min. In contrast with conventional chemical routes, the as-synthesized g-CNQDs exhibited a high crystalline quality, excellent fluorescence characteristics, and a narrow size distribution with an average diameter of 3.5 ± 0.5 nm. More importantly, by using a household microwave oven, this method has the advantages of wide accessibility, environmental friendliness, a high yield of ∼40%, and can be facilely synthesized in a large scale (scaled up to a gram scale). Notably, owing to the absence of any organic reagents, the blueas-prepared g-CNQDs show the excitation wavelength-independent photoluminescence (PL) behavior. Moreover, benefiting from the stable PL emission, good water solubility, and extraordinary biocompatibility with a high quantum yield of ∼17%, the fluorescent g-CNQDs can serve as a potential sensitive and selective probe for Fe{sup 3+} detection with a super low detection limit of 2 nM and an effective labeling agent for live-cell imaging. This work provides a unique opportunity to obtain g-CNQDs in large scale via a facile route, which may pave the way for the further design of g-CNQDs with other applications. - Highlights: • Green synthesis of g-CNQDs via one-step evaporation-condensation method. • The g-CNQDs have shown high crystalline quality and intrinsic fluorescence features. • The fluorescent g-CNQDs can serve as a sensitive and selective probe to detect Fe{sup 3+} ions with a low detection limit of 2 nM. • g-CNQDs can serve as an effective labeling agent for live-cell imaging with extraordinary biocompatibility.

  18. Tripolar vortex formation in dense quantum plasma with ion-temperature-gradients

    Science.gov (United States)

    Qamar, Anisa; Ata-ur-Rahman, Mirza, Arshad M.

    2012-05-01

    We have derived system of nonlinear equations governing the dynamics of low-frequency electrostatic toroidal ion-temperature-gradient mode for dense quantum magnetoplasma. For some specific profiles of the equilibrium density, temperature, and ion velocity gradients, the nonlinear equations admit a stationary solution in the form of a tripolar vortex. These results are relevant to understand nonlinear structure formation in dense quantum plasmas in the presence of equilibrium ion-temperature and density gradients.

  19. Tripolar vortex formation in dense quantum plasma with ion-temperature-gradients

    Energy Technology Data Exchange (ETDEWEB)

    Qamar, Anisa; Ata-ur-Rahman [Institute of Physics and Electronics, University of Peshawar, Khyber Pakhtoon Khwa 25000 (Pakistan); National Center for Physics Shahdrah Valley Road, Islamabad 44000 (Pakistan); Mirza, Arshad M. [Theoretical Plasma Physics Group, Physics Department, Quaid-i-Azam University, Islamabad 45320 (Pakistan)

    2012-05-15

    We have derived system of nonlinear equations governing the dynamics of low-frequency electrostatic toroidal ion-temperature-gradient mode for dense quantum magnetoplasma. For some specific profiles of the equilibrium density, temperature, and ion velocity gradients, the nonlinear equations admit a stationary solution in the form of a tripolar vortex. These results are relevant to understand nonlinear structure formation in dense quantum plasmas in the presence of equilibrium ion-temperature and density gradients.

  20. Tripolar vortex formation in dense quantum plasma with ion-temperature-gradients

    International Nuclear Information System (INIS)

    Qamar, Anisa; Ata-ur-Rahman; Mirza, Arshad M.

    2012-01-01

    We have derived system of nonlinear equations governing the dynamics of low-frequency electrostatic toroidal ion-temperature-gradient mode for dense quantum magnetoplasma. For some specific profiles of the equilibrium density, temperature, and ion velocity gradients, the nonlinear equations admit a stationary solution in the form of a tripolar vortex. These results are relevant to understand nonlinear structure formation in dense quantum plasmas in the presence of equilibrium ion-temperature and density gradients.

  1. Temperature dependent dielectric properties and ion transportation in solid polymer electrolyte for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Sengwa, R. J., E-mail: rjsengwa@rediffmail.com; Dhatarwal, Priyanka, E-mail: dhatarwalpriyanka@gmail.com; Choudhary, Shobhna, E-mail: shobhnachoudhary@rediffmail.com [Dielectric Research Laboratory, Department of Physics, Jai Narain Vyas University, Jodhpur – 342 005 (India)

    2016-05-06

    Solid polymer electrolyte (SPE) film consisted of poly(ethylene oxide) (PEO) and poly(methyl methacrylate) (PMMA) blend matrix with lithium tetrafluroborate (LiBF{sub 4}) as dopant ionic salt and poly(ethylene glycol) (PEG) as plasticizer has been prepared by solution casting method followed by melt pressing. Dielectric properties and ionic conductivity of the SPE film at different temperatures have been determined by dielectric relaxation spectroscopy. It has been observed that the dc ionic conductivity of the SPE film increases with increase of temperature and also the decrease of relaxation time. The temperature dependent relaxation time and ionic conductivity values of the electrolyte are governed by the Arrhenius relation. Correlation observed between dc conductivity and relaxation time confirms that ion transportation occurs with polymer chain segmental dynamics through hopping mechanism. The room temperature ionic conductivity is found to be 4 × 10{sup −6} S cm{sup −1} which suggests the suitability of the SPE film for rechargeable lithium batteries.

  2. Utilize the spectral line pair of the same ionized state ion to measure the ion temperature of tokamak plasma

    International Nuclear Information System (INIS)

    Lin Xiaodong

    2000-01-01

    Making use of a Fabry-Perot interferometer driven by a piezoelectric crystal and selecting the suitable separation of plates, the ion temperature is defined by measuring the superimposed profile of the spectral line pair of the same ionized state ions in Tokamak. The advantage of this method is to higher spectral resolution and wider spectral range select

  3. Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF{sup +}, CF{sub 2}{sup +}, CHF{sub 2}{sup +}, and CH{sub 2}F{sup +} ions

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Tomoko; Karahashi, Kazuhiro; Fukasawa, Masanaga; Tatsumi, Tetsuya; Hamaguchi, Satoshi [Center for Atomic and Molecular Technologies, Osaka University, Osaka 565-0871 (Japan); Semiconductor Technology Development Division, SBG, CPDG, Sony Corporation, Atsugi, Kanagawa 243-0014 (Japan); Center for Atomic and Molecular Technologies, Osaka University, Osaka 565-0871 (Japan)

    2011-09-15

    Hydrogen in hydrofluorocarbon plasmas plays an important role in silicon nitride (Si{sub 3}N{sub 4}) reactive ion etching. This study focuses on the elementary reactions of energetic CHF{sub 2}{sup +} and CH{sub 2}F{sup +} ions with Si{sub 3}N{sub 4} surfaces. In the experiments, Si{sub 3}N{sub 4} surfaces were irradiated by monoenergetic (500-1500 eV) beams of CHF{sub 2}{sup +} and CH{sub 2}F{sup +} ions as well as hydrogen-free CF{sub 2}{sup +} and CF{sup +} ions generated by a mass-selected ion beam system and their etching yields and surface properties were examined. It has been found that, when etching takes place, the etching rates of Si{sub 3}N{sub 4} by hydrofluorocarbon ions, i.e., CHF{sub 2}{sup +} and CH{sub 2}F{sup +}, are higher than those by the corresponding fluorocarbon ions, i.e., CF{sub 2}{sup +} and CF{sup +}, respectively. When carbon film deposition takes place, it has been found that hydrogen of incident hydrofluorocarbon ions tends to scavenge fluorine of the deposited film, reducing its fluorine content.

  4. Reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Porz, F.

    1982-10-01

    Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

  5. Low temperature RF plasma nitriding of self-organized TiO2 nanotubes for effective bandgap reduction

    Science.gov (United States)

    Bonelli, Thiago Scremin; Pereyra, Inés

    2018-06-01

    Titanium dioxide is a widely studied semiconductor material found in many nanostructured forms, presenting very interesting properties for several applications, particularly photocatalysis. TiO2 nanotubes have a high surface-to-volume ratio and functional electronic properties for light harvesting. Despite these manifold advantages, TiO2 photocatalytic activity is limited to UV radiation due to its large band gap. In this work, TiO2 nanotubes produced by electrochemical anodization were submitted to plasma nitriding processes in a PECVD reactor. The plasma parameters were evaluated to find the best conditions for gap reduction, in order to increase their photocatalytic activity. The pressure and RF power density were varied from 0.66 to 2.66 mbar and 0.22 to 3.51 W/cm2 respectively. The best gap reduction, to 2.80 eV, was achieved using a pressure of 1.33 mbar and 1.75 W/cm2 RF power at 320 °C, during a 2-h process. This leads to a 14% reduction in the band gap value and an increase of 25.3% in methylene blue reduction, doubling the range of solar photons absorption from 5 to 10% of the solar spectrum.

  6. Temperature dependence of ion irradiation induced amorphization of zirconolite

    International Nuclear Information System (INIS)

    Smith, K. L.; Blackford, M. G.; Lumpkin, G. R.; Zaluzec, N. J.

    1999-01-01

    Zirconolite is one of the major host phases for actinides in various wasteforms for immobilizing high level radioactive waste (HLW). Over time, zirconolite's crystalline matrix is damaged by α-particles and energetic recoil nuclei recoil resulting from α-decay events. The cumulative damage caused by these particles results in amorphization. Data from natural zirconolites suggest that radiation damage anneals over geologic time and is dependant on the thermal history of the material. Proposed HLW containment strategies rely on both a suitable wasteform and geologic isolation. Depending on the waste loading, depth of burial, and the repository-specific geothermal gradient, burial could result in a wasteform being exposed to temperatures of between 100--450 C. Consequently, it is important to assess the effect of temperature on radiation damage in synthetic zirconolite. Zirconolite containing wasteforms are likely to be hot pressed at or below 1,473 K (1,200 C) and/or sintered at or below 1,623 K (1,350 C). Zirconolite fabricated at temperatures below 1,523 K (1,250 C) contains many stacking faults. As there have been various attempts to link radiation resistance to structure, the authors decided it was also pertinent to assess the role of stacking faults in radiation resistance. In this study, they simulate α-decay damage in two zirconolite samples by irradiating them with 1.5 MeV Kr + ions using the High Voltage Electron Microscope-Tandem User Facility (HTUF) at Argonne National Laboratory (ANL) and measure the critical dose for amorphization (D c ) at several temperatures between 20 and 773 K. One of the samples has a high degree of crystallographic perfection, the other contains many stacking faults on the unit cell scale. Previous authors proposed a model for estimating the activation energy of self annealing in zirconolite and for predicting the critical dose for amorphization at any temperature. The authors discuss their results and earlier published data in

  7. A series of inorganic solid nitrogen sources for the synthesis of metal nitride clusterfullerenes: the dependence of production yield on the oxidation state of nitrogen and counter ion.

    Science.gov (United States)

    Liu, Fupin; Guan, Jian; Wei, Tao; Wang, Song; Jiao, Mingzhi; Yang, Shangfeng

    2013-04-01

    A series of nitrogen-containing inorganic solid compounds with variable oxidation states of nitrogen and counter ions have been successfully applied as new inorganic solid nitrogen sources toward the synthesis of Sc-based metal nitride clusterfullerenes (Sc-NCFs), including ammonium salts [(NH4)xH(3-x)PO4 (x = 0-2), (NH4)2SO4, (NH4)2CO3, NH4X (X = F, Cl), NH4SCN], thiocyanate (KSCN), nitrates (Cu(NO3)2, NaNO3), and nitrite (NaNO2). Among them, ammonium phosphates ((NH4)xH(3-x)PO4, x = 1-3) and ammonium thiocyanate (NH4SCN) are revealed to behave as better nitrogen sources than others, and the highest yield of Sc-NCFs is achieved when NH4SCN was used as a nitrogen source. The optimum molar ratio of Sc2O3:(NH4)3PO4·3H2O:C and Sc2O3:NH4SCN:C has been determined to be 1:2:15 and 1:3:15, respectively. The thermal decomposition products of these 12 inorganic compounds have been discussed in order to understand their different performances toward the synthesis of Sc-NCFs, and accordingly the dependence of the production yield of Sc-NCFs on the oxidation state of nitrogen and counter ion is interpreted. The yield of Sc3N@C80 (I(h) + D(5h)) per gram Sc2O3 by using the N2-based group of nitrogen sources (thiocyanate, nitrates, and nitrite) is overall much lower than those by using gaseous N2 and NH4SCN, indicating the strong dependence of the yield of Sc-NCFs on the oxidation state of nitrogen, which is attributed to the "in-situ" redox reaction taking place for the N2-based group of nitrogen sources during discharging. For NH3-based group of nitrogen sources (ammonium salts) which exhibits a (-3) oxidation states of nitrogen, their performance as nitrogen sources is found to be sensitively dependent on the anion, and this is understood by considering their difference on the thermal stability and/or decomposition rate. Contrarily, for the N2-based group of nitrogen sources, the formation of Sc-NCFs is independent to both the oxidation state of nitrogen (+3 or +5) and the

  8. Temperature Dependence of the Stability of Ion Pair Interactions ...

    Indian Academy of Sciences (India)

    The occurrence of bridging water molecules between the ions ensures that the ions are not ... The structural features that render this thermostability ..... dehydrogenase single site mutant T198I from Thermus thermophilus with PDB ID 1BDM.

  9. Effects of hexagonal boron nitride and sintering temperature on mechanical and tribological properties of SS316L/h-BN composites

    International Nuclear Information System (INIS)

    Mahathanabodee, S.; Palathai, T.; Raadnui, S.; Tongsri, R.; Sombatsompop, N.

    2013-01-01

    Highlights: ► 20 vol% h-BN in stainless steel gave the lowest friction coefficient. ► Sintering temperature of 1200 °C was recommended for optimum friction coefficient. ► h-BN in stainless steel transformed to a boride liquid phase at 1250 °C. - Abstract: In this work, hexagonal boron nitride (h-BN)-embedded 316L stainless steel (SS316L/h-BN) composites were prepared using a conventional powder metallurgy process. In order to produce self-lubricating composites, various amounts of h-BN (10, 15 and 20 vol%) were incorporated. Effects of h-BN content and sintering temperature on the mechanical and tribological properties were of primary interest. The results suggested that an increase in h-BN content reduced the hardness of the composites, but that the hardness could be improved by increasing the sintering temperature. Addition of h-BN up to 20 vol% improved the friction coefficient of the composites. At a sintering temperature of 1250 °C, h-BN transformed into a boride liquid phase, which formed a eutectic during cooling and exhibited a deterioration effect on lubricating film formation of the h-BN, resulting in an increase in the friction coefficient of the composites. The specific wear rate was greatly reduced when the composites were sintered at 1200 °C. The lowest friction coefficient and specific wear rate in the composites could be found under the experimental conditions used in this work when using 20 vol% of h-BN at a sintering temperature of 1200 °C

  10. Corrosion behaviour of low energy, high temperature nitrogen ion ...

    Indian Academy of Sciences (India)

    primary ions were used and negative secondary ions were detected. A difference in the distribution of the CrN and the alleged N signal was observed and attributed to CrN acting as a diffusion barrier for nitrogen diffusion. It may be noted here that nitrogen does not form stable elemental negative ions [2] and is thus.

  11. Nonlinear structure formation in ion-temperature-gradient driven drift waves in pair-ion plasma with nonthermal electron distribution

    Science.gov (United States)

    Razzaq, Javaria; Haque, Q.; Khan, Majid; Bhatti, Adnan Mehmood; Kamran, M.; Mirza, Arshad M.

    2018-02-01

    Nonlinear structure formation in ion-temperature-gradient (ITG) driven waves is investigated in pair-ion plasma comprising ions and nonthermal electrons (kappa, Cairns). By using the transport equations of the Braginskii model, a new set of nonlinear equations are derived. A linear dispersion relation is obtained and discussed analytically as well as numerically. It is shown that the nonthermal population of electrons affects both the linear and nonlinear characteristics of the ITG mode in pair-ion plasma. This work will be useful in tokamaks and stellarators where non-Maxwellian population of electrons may exist due to resonant frequency heating, electron cyclotron heating, runaway electrons, etc.

  12. Room-temperature synthesis of nanoporous 1D microrods of graphitic carbon nitride (g-C3N4) with highly enhanced photocatalytic activity and stability.

    Science.gov (United States)

    Pawar, Rajendra C; Kang, Suhee; Park, Jung Hyun; Kim, Jong-Ho; Ahn, Sunghoon; Lee, Caroline S

    2016-08-08

    A one-dimensional (1D) nanostructure having a porous network is an exceptional photocatalytic material to generate hydrogen (H2) and decontaminate wastewater using solar energy. In this report, we synthesized nanoporous 1D microrods of graphitic carbon nitride (g-C3N4) via a facile and template-free chemical approach at room temperature. The use of concentrated acids induced etching and lift-off because of strong oxidation and protonation. Compared with the bulk g-C3N4, the porous 1D microrod structure showed five times higher photocatalytic degradation performance toward methylene blue dye (MB) under visible light irradiation. The photocatalytic H2 evolution of the 1D nanostructure (34 μmol g(-1)) was almost 26 times higher than that of the bulk g-C3N4 structure (1.26 μmol g(-1)). Additionally, the photocurrent stability of this nanoporous 1D morphology over 24 h indicated remarkable photocorrosion resistance. The improved photocatalytic activities were attributed to prolonged carrier lifetime because of its quantum confinement effect, effective separation and transport of charge carriers, and increased number of active sites from interconnected nanopores throughout the microrods. The present 1D nanostructure would be highly suited for photocatalytic water purification as well as water splitting devices. Finally, this facile and room temperature strategy to fabricate the nanostructures is very cost-effective.

  13. Characterization of stainless steel through Scanning Electron Microscopy, nitrided in the process of implantation of immersed ions in plasma; Caracterizacion de acero inoxidable mediante Microscopia Electronica de Barrido nitrurado en el proceso de implantacion de iones inmersos en plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Moreno S, H

    2003-07-01

    The present project carries out the investigation of the nitridation of the austenitic stainless steel schedule 304, applying the novel technology of installation of nitrogen ions in immersed materials in plasma (Plll), by means of which they modify those properties of the surface of the steel. The obtained results by means of tests of Vickers microhardness, shows that the hardness was increment from 266 to 740 HV (microhardness units). It was determined by means of scanning electron microscopy, the one semiquantitative chemical analysis of the elements that constitute the austenitic stainless steel schedule 304; the obtained results, show to the nitrogen like an element of their composition in the pieces where carried out to end the PIII technology. The parameters of the plasma with which carried out the technology Plll, were monitored and determined by means of electric probes, and with which it was determined that the density of particles is stable in the interval of 1x10{sup -1} at 3x10{sup -1}Torr, and it is where better results of hardness were obtained. That reported in this work, they are the first results obtained when applying the technology Plll in Mexico, and with base in these, it is even necessary to investigate and to deepen until to dominate the process and to be in possibilities of proposing it to be carried out and exploited in an industrial way. (Author)

  14. High temperature electron beam ion source for the production of single charge ions of most elements of the Periodic Table

    CERN Document Server

    Panteleev, V N; Barzakh, A E; Fedorov, D V; Ivanov, V S; Moroz, F V; Orlov, S Y; Seliverstov, D M; Stroe, L; Tecchio, L B; Volkov, Y M

    2003-01-01

    A new type of a high temperature electron beam ion source (HTEBIS) with a working temperature up to 2500 deg. C was developed for production of single charge ions of practically all elements. Off-line tests and on-line experiments making use of the developed ion source coupled with uranium carbide targets of different density, have been carried out. The ionization efficiency measured for stable atoms of many elements varied in the interval of 1-6%. Using the HTEBIS, the yields and on-line production efficiency of neutron rich isotopes of Mn, Fe, Co, Cu, Rh, Pd, Ag, Cd, In, Sn and isotopes of heavy elements Pb, Bi, Po and some others have been determined. The revealed confinement effect of the ions produced in the narrow electron beam inside a hot ion source cavity has been discussed.

  15. Ion permeability of the cytoplasmic membrane limits the maximum growth temperature of bacteria and archaea

    NARCIS (Netherlands)

    van de Vossenberg, J.L C M; Ubbink-Kok, T.; Elferink, M.G.L.; Driessen, A.J.M.; Konings, W.N

    1995-01-01

    Protons and sodium ions are the most commonly used coupling ions in energy transduction in bacteria and archaea. At their growth temperature, the permeability of the cytoplasmic membrane of thermophilic bacteria to protons is high compared with that of sodium ions. In some thermophiles, sodium is

  16. Single-ion polymer electrolyte membranes enable lithium-ion batteries with a broad operating temperature range.

    Science.gov (United States)

    Cai, Weiwei; Zhang, Yunfeng; Li, Jing; Sun, Yubao; Cheng, Hansong

    2014-04-01

    Conductive processes involving lithium ions are analyzed in detail from a mechanistic perspective, and demonstrate that single ion polymeric electrolyte (SIPE) membranes can be used in lithium-ion batteries with a wide operating temperature range (25-80 °C) through systematic optimization of electrodes and electrode/electrolyte interfaces, in sharp contrast to other batteries equipped with SIPE membranes that display appreciable operability only at elevated temperatures (>60 °C). The performance is comparable to that of batteries using liquid electrolyte of inorganic salt, and the batteries exhibit excellent cycle life and rate performance. This significant widening of battery operation temperatures coupled with the inherent flexibility and robustness of the SIPE membranes makes it possible to develop thin and flexible Li-ion batteries for a broad range of applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

    2014-04-15

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  18. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

    Science.gov (United States)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

    2014-04-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  19. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-01-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  20. Temperature effect on X-ray photoelectron spectra of 3d transition metal ions

    International Nuclear Information System (INIS)

    Kochur, A.G.; Kozakov, A.T.; Yavna, V.A.; Daniel, Ph.

    2014-01-01

    Highlights: • 2p XPS of 3d metal ions are calculated in an isolated ion approximation. • 2p XPS of Ti, V, Cr, Mn, Fe ions are temperature dependent even at room temperature. • Temperature effect on 3p XPS is slight. • No temperature effect on 3s XPS is discovered. - Abstract: Temperature effect on 2p- 3s- and 3p X-ray photoelectron spectra (XPS) of various ions of Ti, V, Cr, Mn and Fe is studied theoretically within an isolated ion approximation. It is shown that the 2p XPS of those ions are temperature dependent even at room temperature due to a very slight energy splitting between the ground-state-term total-momentum J-components which can be thermally populated. Most significant temperature effect is expected in the 2p-spectra of Ti 2+ (3d 2 ), V 2+ (3d 3 ), Cr 2+ (3d 4 ), Mn 3+ (3d 4 ), and Mn 3+ (3d 4 ) ions. The temperature effect on 3p XPS is slight. No temperature effect on 3s XPS is expected

  1. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    Science.gov (United States)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  2. Measurement of the ion temperature by analysing the neutral particles in TCA (Tokamak Chauffage Alfven)

    International Nuclear Information System (INIS)

    Chambrier, A. de; Heym, A.; Hofmann, F.; Joye, B.; Keller, R.; Lietti, A.; Lister, J.B.; Pochelon, A.; Simm, W.

    1983-01-01

    The aim of the TCA project is to investigate the heating effects of resonant absorption of Alfven waves in a Tokamak plasma. In TCA, the ion temperature increases linearly with the heating. Depending on the conditions, the ion temperature rises from 150 eV to 225 eV. (Auth./G.T.H.)

  3. Observation of refraction and convergence of ion acoustic waves in a plasma with a temperature gradient

    International Nuclear Information System (INIS)

    Nishida, Y.; Hirose, A.

    1977-01-01

    The refraction and convergence of ion acoustic waves are experimentally investigated in a magnetized plasma with an electron temperature gradient. When ion acoustic waves are launched parallel to the field lines the waves converge toward the interior of the plasma column where the electron temperature is lower, in good agreement with theoretical prediction. Wave interference is also observed. (author)

  4. Measuring main-ion temperatures in ASDEX upgrade using scattering of ECRH radiation

    DEFF Research Database (Denmark)

    Pedersen, Morten Stejner; Nielsen, Stefan Kragh; Jacobsen, Asger Schou

    2016-01-01

    We demonstrate that collective Thomson scattering of millimeter wave electron cyclotron resonance heating radiation can be used for measurements of the main-ion temperature in the ASDEX Upgrade tokamak.......We demonstrate that collective Thomson scattering of millimeter wave electron cyclotron resonance heating radiation can be used for measurements of the main-ion temperature in the ASDEX Upgrade tokamak....

  5. A measurement of the local ion temperature gradient in the PLT tokamak

    International Nuclear Information System (INIS)

    Lovberg, J.A.; Strachan, J.D.; Princeton Univ., NJ

    1989-12-01

    Local ion temperature gradients were measured at two radial positions in the PLT tokamak by counting escaping d(d,p)t protons on orbits at closely spaced intervals. A single surface barrier detector was used to make each gradient measurement, eliminating relative calibration uncertainties. The ion thermal diffusivities inferred through ion energy balance with the measured temperature gradients are within a factor of two of Chang-Hinton neoclassical values for the 3 He-minority ICRH plasmas. 12 refs., 8 figs

  6. Predicted precision of ion temperature and impurity fractional density measurements using the JET collective scattering diagnostic

    International Nuclear Information System (INIS)

    Orsitto, F.

    1992-11-01

    In a previous investigation the possibility of measuring the bulk ion temperature was considered in detail, in the context of the proposed Thomson scattering diagnostic for fast ions and alpha particles in the Joint European Torus project. In this report we give an affirmative answer to the question of whether good precision can be obtained in the simultaneous determination of the temperatures and densities of plasma ions from a collective scattering experiment provided some conditions are satisfied. (Author)

  7. Ion temperature anisotropy in high power helium neutral beam fuelling experiments in JET

    Energy Technology Data Exchange (ETDEWEB)

    Maas, A C; Core, W G.F.; Gerstel, U C; Von Hellermann, M G; Koenig, R W.T.; Marcus, F B [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking

    1994-07-01

    During helium beam fuelling experiments in JET, distinctive anisotropic features have been observed in the velocity distribution function describing both fast and thermal alpha particle populations. During the initial fuelling phase the central helium ion temperature observed perpendicular to the magnetic field is higher than the central electron temperature, while the central helium ion temperature observed parallel to the magnetic field is lower than or equal to the central electron temperature. In order to verify temperature measurements of both perpendicular and parallel lines of sight, other independent methods of deducing the ion temperature are investigated: deuterium ion temperature, deuterium density, comparison with neutron rates and profiles (influence of a possible metastable population of helium). 6 refs., 7 figs.

  8. The impact of edge gradients in the pressure, density, ion temperature, and electron temperature on edge-localized modes

    International Nuclear Information System (INIS)

    Kleva, Robert G.; Guzdar, Parvez N.

    2011-01-01

    The magnitude of the energy and particle fluxes in simulations of edge-localized modes (ELMs) is determined by the edge gradients in the pressure, density, ion temperature, and electron temperature. The total edge pressure gradient is the dominant influence on ELMs by far. An increase (decrease) of merely 2% in the pressure gradient results in an increase (decrease) of more than a factor of ten in the size of the ELM bursts. At a fixed pressure gradient, the size of the ELM bursts decreases as the density gradient increases, while the size of the bursts increases as the electron temperature gradient or, especially, the ion temperature gradient increases.

  9. Effects of low central fuelling on density and ion temperature profiles in reversed shear plasmas on JT-60U

    Energy Technology Data Exchange (ETDEWEB)

    Takenaga, H; Ide, S; Sakamoto, Y; Fujita, T [Japan Atomic Energy Agency, Naka Ibaraki 311-0193 (Japan)], E-mail: takenaga.hidenobu@jaea.go.jp

    2008-07-15

    Effects of low central fuelling on density and ion temperature profiles have been investigated using negative ion based neutral beam injection and electron cyclotron heating (ECH) in reversed shear plasmas on JT-60U. Strong internal transport barrier (ITB) was maintained in density and ion temperature profiles, when central fuelling was decreased by switching positive ion based neutral beam injection to ECH after the strong ITB formation. Similar density and ion temperature ITBs were formed for the low and high central fuelling cases during the plasma current ramp-up phase. Strong correlation between the density gradient and the ion temperature gradient was observed, indicating that particle transport and ion thermal transport are strongly coupled or the density gradient assists the ion temperature ITB formation through suppression of drift wave instabilities such as ion temperature gradient mode. These results support that the density and ion temperature ITBs can be formed under reactor relevant conditions.

  10. Effects of low central fuelling on density and ion temperature profiles in reversed shear plasmas on JT-60U

    Science.gov (United States)

    Takenaga, H.; Ide, S.; Sakamoto, Y.; Fujita, T.; JT-60 Team

    2008-07-01

    Effects of low central fuelling on density and ion temperature profiles have been investigated using negative ion based neutral beam injection and electron cyclotron heating (ECH) in reversed shear plasmas on JT-60U. Strong internal transport barrier (ITB) was maintained in density and ion temperature profiles, when central fuelling was decreased by switching positive ion based neutral beam injection to ECH after the strong ITB formation. Similar density and ion temperature ITBs were formed for the low and high central fuelling cases during the plasma current ramp-up phase. Strong correlation between the density gradient and the ion temperature gradient was observed, indicating that particle transport and ion thermal transport are strongly coupled or the density gradient assists the ion temperature ITB formation through suppression of drift wave instabilities such as ion temperature gradient mode. These results support that the density and ion temperature ITBs can be formed under reactor relevant conditions.

  11. Effect of ion nitriding on the crystal structure of 3 mol% Y{sub 2}O{sub 3}-doped ZrO{sub 2} thin-films prepared by the sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz, A.L. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)]. E-mail: alortiz@unex.es; Diaz-Parralejo, A. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Borrero-Lopez, O. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Guiberteau, F. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)

    2006-06-30

    We investigated the effect of ion nitriding on the crystal structure of 3 mol% Y{sub 2}O{sub 3}-doped ZrO{sub 2} (3YSZ) thin-films prepared by the sol-gel method. For this purpose, we used X-ray diffractometry to determine the crystalline phases, the lattice parameters, the crystal sizes, and the lattice microstrains, and glow discharge-optical emission spectroscopy to obtain the depth profiles of the elemental chemical composition. We found that nitrogen atoms substitute oxygen atoms in the 3YSZ crystal, thus leading to the formation of unsaturated-substitutional solid solutions with reduced lattice parameters and Zr{sub 0.94}Y{sub 0.06}O{sub 1.72}N{sub 0.17} stoichiometric formula. We also found that ion nitriding does not affect the grain size, but does generate lattice microstrains due to the increase in point defects in the crystalline lattice.

  12. Preparation of uranium nitride

    International Nuclear Information System (INIS)

    Potter, R.A.; Tennery, V.J.

    1976-01-01

    A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

  13. Influence of temperature and ion concentration on sedimentation ...

    African Journals Online (AJOL)

    TSP sedimentation order also ranged between 0.58 and 1.31 at constant phosphate ions concentration and between 1.55 and 1.81 at constant strontium ions concentration. ... Data may be employed as additional design information for modeling physiochemical phosphate removal in water treatment technology. Keywords: ...

  14. Quarkonia at finite temperature in relativistic heavy-ion collisions

    International Nuclear Information System (INIS)

    Datta, Saumen

    2015-01-01

    The behaviour of quarkonia in relativistic heavy-ion collisions is reviewed. After a detailed discussion of the current theoretical understanding of quarkonia in a static equilibriated plasma, we discuss quarkonia yield from the fireball created in ultrarelativistic heavy-ion collision experiments. We end with a brief discussion of the experimental results and outlook. (author)

  15. Quarkonia at finite temperature in relativistic heavy-ion collisions

    Indian Academy of Sciences (India)

    2015-05-06

    May 6, 2015 ... The behaviour of quarkonia in relativistic heavy-ion collisions is reviewed. After a detailed discussion of the current theoretical understanding of quarkonia in a static equilibriated plasma, we discuss quarkonia yield from the fireball created in ultrarelativistic heavy-ion collision experiments. We end with a ...

  16. Surface modification of titanium by plasma nitriding

    Directory of Open Access Journals (Sweden)

    Kapczinski Myriam Pereira

    2003-01-01

    Full Text Available A systematic investigation was undertaken on commercially pure titanium submitted to plasma nitriding. Thirteen different sets of operational parameters (nitriding time, sample temperature and plasma atmosphere were used. Surface analyses were performed using X-ray diffraction, nuclear reaction and scanning electron microscopy. Wear tests were done with stainless steel Gracey scaler, sonic apparatus and pin-on-disc machine. The obtained results indicate that the tribological performance can be improved for samples treated with the following conditions: nitriding time of 3 h; plasma atmosphere consisting of 80%N2+20%H2 or 20%N2+80%H2; sample temperature during nitriding of 600 or 800 degreesC.

  17. Temperature-controlled depth profiling in polymeric materials using cluster secondary ion mass spectrometry (SIMS)

    Energy Technology Data Exchange (ETDEWEB)

    Mahoney, Christine M. [National Institute of Standards and Technology, 100 Bureau Drive, Mail Stop 8371, Gaithersburg, MD, 20899 (United States)]. E-mail: christine.mahoney@nist.gov; Fahey, Albert J. [National Institute of Standards and Technology, 100 Bureau Drive, Mail Stop 8371, Gaithersburg, MD, 20899 (United States); Gillen, Greg [National Institute of Standards and Technology, 100 Bureau Drive, Mail Stop 8371, Gaithersburg, MD, 20899 (United States); Xu Chang [National Institute of Standards and Technology, 100 Bureau Drive, Mail Stop 8371, Gaithersburg, MD, 20899 (United States); Batteas, James D. [National Institute of Standards and Technology, 100 Bureau Drive, Mail Stop 8371, Gaithersburg, MD, 20899 (United States)

    2006-07-30

    Secondary ion mass spectrometry (SIMS) employing an SF{sub 5} {sup +} polyatomic primary ion source was used to depth profile through poly(methylmethacrylate) (PMMA), poly(lactic acid) (PLA) and polystyrene (PS) thin films at a series of temperatures from -125 deg. C to 150 deg. C. It was found that for PMMA, reduced temperature analysis produced depth profiles with increased secondary ion stability and reduced interfacial widths as compared to analysis at ambient temperature. Atomic force microscopy (AFM) images indicated that this improvement in interfacial width may be related to a decrease in sputter-induced topography. Depth profiling at higher temperatures was typically correlated with increased sputter rates. However, the improvements in interfacial widths and overall secondary ion stability were not as prevalent as was observed at low temperature. For PLA, improvements in signal intensities were observed at low temperatures, yet there was no significant change in secondary ion stability, interface widths or sputter rates. High temperatures yielded a significant decrease in secondary ion stability of the resulting profiles. PS films showed rapid degradation of characteristic secondary ion signals under all temperatures examined.

  18. Ion temperature effect on the propagation of ion acoustic solitary waves in a relativistic magnetoplasma

    International Nuclear Information System (INIS)

    Salahuddin, M.

    1990-01-01

    Using the reductive perturbation technique the Korteweg-de Vries (KdV) equation is derived for ion acoustic waves, in the presence of weak relativistic effects and warm ions, in a magnetized plasma. The influence of non ideal effects on the amplitude and width of the ion acoustic solitary waves is also discussed. The results are depicted in the figures. It is shown that the simultaneous presence of ion streaming and magnetic field stops the tendency of soliton breaking. (author)

  19. Zirconium nitride hard coatings

    International Nuclear Information System (INIS)

    Roman, Daiane; Amorim, Cintia Lugnani Gomes de; Soares, Gabriel Vieira; Figueroa, Carlos Alejandro; Baumvol, Israel Jacob Rabin; Basso, Rodrigo Leonardo de Oliveira

    2010-01-01

    Zirconium nitride (ZrN) nanometric films were deposited onto different substrates, in order to study the surface crystalline microstructure and also to investigate the electrochemical behavior to obtain a better composition that minimizes corrosion reactions. The coatings were produced by physical vapor deposition (PVD). The influence of the nitrogen partial pressure, deposition time and temperature over the surface properties was studied. Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and corrosion experiments were performed to characterize the ZrN hard coatings. The ZrN films properties and microstructure changes according to the deposition parameters. The corrosion resistance increases with temperature used in the films deposition. Corrosion tests show that ZrN coating deposited by PVD onto titanium substrate can improve the corrosion resistance. (author)

  20. Variable-temperature sample system for ion implantation at -192 to +5000C

    International Nuclear Information System (INIS)

    Fuller, C.T.

    1978-04-01

    A variable-temperature sample system based on exchange-gas coupling was developed for ion-implantation use. The sample temperature can be controlled from -192 0 C to +500 0 C with rapid cooling. The system also has provisions for focusing and alignment of the ion beam, electron suppression, temperature monitoring, sample current measuring, and cryo-shielding. Design considerations and operating characteristics are discussed. 5 figures

  1. Temperature and ion-mass dependence of amorphization dose for ion beam irradiated zircon (ZrSiO4)

    International Nuclear Information System (INIS)

    Wang, L.M.; Ewing, R.C.; Eby, R.K.

    1992-12-01

    The temperature dependence of amorphization dose for zircon under 1.5 MeV Kr ion irradiation has been investigated using the ANL HVEM-Tandem Facility. Three regimes were observed in the amorphization dose-temperature curve. In the first regime (15 to 300 K), the critical amorphization dose increased from 3.06 to 4.5 ions/nm 2 . In the second regime (300 to 473 K), there is little change in the amorphizationdose. In the third regime (> 473 K), the amorphization dose increased exponentially to 8.3 ions/nm 2 at 913 K. This temperature dependence of amorphization dose can be described by two processes with different activation energies (0.018 and 0.31 eV respectively) which are attributed to close pair recombination in the cascades at low temperatures and radiation-enhanced epitaxial recrystallization at higher temperatures. The upper temperature limit for amorphization of zircon is estimated to be 1100 K. The ion-mass dependence of the amorphization dose (in dpa) has also been discussed in terms of the energy to recoils based on data obtained from He, Ne, Ar, Kr, Xe irradiations and a 238 Pu-doped sample

  2. Effects of the instability enhanced friction on relative ion densities in a two-ion species low-temperature plasma

    Science.gov (United States)

    Vukovic, Mirko

    2011-10-01

    The instability enhanced friction theory of Baalrud & Hegna (Phys. Plasmas 18, 023505 (2011)) predicts that for comparable ion densities the ions nearly reach a common velocity near the sheath edge in a low temperature plasma. The theory was experimentally confirmed by Yip, Hershkowitz, & Severn (Phys. Rev. Letters 104, 225003 (2010)). We will explore the effects of the theory on relative ion densities in a numerical simulation of an Ar/Xe plasma. Results for a 0D plasma model (Lieberman, Lichtenberg, Principles of Plasma Discharges and Materials Processing, 2005) will be presented.

  3. Effect of ion temperature on ion-acoustic solitary waves in a magnetized plasma in presence of superthermal electrons

    Energy Technology Data Exchange (ETDEWEB)

    Singh, S. V.; Devanandhan, S.; Lakhina, G. S. [Indian Institute of Geomagnetism, Navi Mumbai (India); Bharuthram, R. [University of the Western Cape, Bellville (South Africa)

    2013-01-15

    Obliquely propagating ion-acoustic soliatry waves are examined in a magnetized plasma composed of kappa distributed electrons and fluid ions with finite temperature. The Sagdeev potential approach is used to study the properties of finite amplitude solitary waves. Using a quasi-neutrality condition, it is possible to reduce the set of equations to a single equation (energy integral equation), which describes the evolution of ion-acoustic solitary waves in magnetized plasmas. The temperature of warm ions affects the speed, amplitude, width, and pulse duration of solitons. Both the critical and the upper Mach numbers are increased by an increase in the ion temperature. The ion-acoustic soliton amplitude increases with the increase in superthermality of electrons. For auroral plasma parameters, the model predicts the soliton speed, amplitude, width, and pulse duration, respectively, to be in the range of (28.7-31.8) km/s, (0.18-20.1) mV/m; (590-167) m, and (20.5-5.25) ms, which are in good agreement with Viking observations.

  4. New Routes to Lanthanide and Actinide Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Butt, D.P.; Jaques, B.J.; Osterberg, D.D. [Boise State University, 1910 University Dr., Boise, Idaho 83725-2075 (United States); Marx, B.M. [Concurrent Technologies Corporation, Johnstown, PA (United States); Callahan, P.G. [Carnegie Mellon University, Pittsburgh, PA (United States); Hamdy, A.S. [Central Metallurgical R and D Institute, Helwan, Cairo (Egypt)

    2009-06-15

    The future of nuclear energy in the U.S. and its expansion worldwide depends greatly on our ability to reduce the levels of high level waste to minimal levels, while maintaining proliferation resistance. Implicit in the so-called advanced fuel cycle is the need for higher levels of fuel burn-up and consequential use of complex nuclear fuels comprised of fissile materials such as Pu, Am, Np, and Cm. Advanced nitride fuels comprised ternary and quaternary mixtures of uranium and these actinides have been considered for applications in advanced power plants, but there remain many processing challenges as well as necessary qualification testing. In this presentation, the advantages and disadvantages of nitride fuels are discussed. Methods of synthesizing the raw materials and sintering of fuels are described including a discussion of novel, low cost routes to nitrides that have the potential for reducing the cost and footprint of a fuel processing plant. Phase pure nitrides were synthesized via four primary methods; reactive milling metal flakes in nitrogen at room temperature, directly nitriding metal flakes in a pure nitrogen atmosphere, hydriding metal flakes prior to nitridation, and carbo-thermically reducing the metal oxide and carbon mixture prior to nitridation. In the present study, the sintering of UN, DyN, and their solid solutions (U{sub x}, Dy{sub 1-x}) (x = 1 to 0.7) were also studied. (authors)

  5. Transport due to ion temperature gradient mode vortex turbulence

    International Nuclear Information System (INIS)

    Pavlenko, V.P.; Weiland, J.

    1991-01-01

    The ion energy transport due to an ensemble of nonlinear vortices is calculated in the test particle approximation for a strongly turbulent plasma. A diffusion coefficient proportional to the root of the stationary turbulence level is obtained. (au)

  6. Design and Application of a High-Temperature Linear Ion Trap Reactor

    Science.gov (United States)

    Jiang, Li-Xue; Liu, Qing-Yu; Li, Xiao-Na; He, Sheng-Gui

    2018-01-01

    A high-temperature linear ion trap reactor with hexapole design was homemade to study ion-molecule reactions at variable temperatures. The highest temperature for the trapped ions is up to 773 K, which is much higher than those in available reports. The reaction between V2O6 - cluster anions and CO at different temperatures was investigated to evaluate the performance of this reactor. The apparent activation energy was determined to be 0.10 ± 0.02 eV, which is consistent with the barrier of 0.12 eV calculated by density functional theory. This indicates that the current experimental apparatus is prospective to study ion-molecule reactions at variable temperatures, and more kinetic details can be obtained to have a better understanding of chemical reactions that have overall barriers. [Figure not available: see fulltext.

  7. Formation and termination of High ion temperature mode in Heliotron/torsatron plasmas

    International Nuclear Information System (INIS)

    Ida, K.; Kondo, K.; Nagasaki, K.

    1997-01-01

    Physics of the formation and termination of High ion temperature mode (high T i mode) are studied by controlling density profiles and radial electric field. High ion temperature mode is observed for neutral beam heated plasmas in Heliotron/torsatron plasmas (Heliotron-E). This high T i mode plasma is characterized by a peaked ion temperature profile and is associated with a peaked electron density profile produced by neutral beam fueling with low wall recycling. This high T i mode is terminated by flattening the electron density caused by either gas puffing or second harmonic ECH (core density 'pump-out'). (author)

  8. Properties of plasma sheath with ion temperature in magnetic fusion devices

    International Nuclear Information System (INIS)

    Liu Jinyuan; Wang Feng; Sun Jizhong

    2011-01-01

    The plasma sheath properties in a strong magnetic field are investigated in this work using a steady state two-fluid model. The motion of ions is affected heavily by the strong magnetic field in fusion devices; meanwhile, the effect of ion temperature cannot be neglected for the plasma in such devices. A criterion for the plasma sheath in a strong magnetic field, which differs from the well-known Bohm criterion for low temperature plasma sheath, is established theoretically with a fluid model. The fluid model is then solved numerically to obtain detailed sheath information under different ion temperatures, plasma densities, and magnetic field strengths.

  9. Electrochemical Solution Growth of Magnetic Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-10-01

    Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

  10. Superplastic forging nitride ceramics

    Science.gov (United States)

    Panda, P.C.; Seydel, E.R.; Raj, R.

    1988-03-22

    A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

  11. The influence of ion temperature on solitary waves in collisionless weak relativistic plasma

    International Nuclear Information System (INIS)

    Cerepaniuc, Adina

    2004-01-01

    Korteweg-de Vries equation is used to study the influence of the ion temperature, on the ion acoustic waves in the frame of collisionless plasma's weak relativistic effect. In the literature it is discussed the influence of ion temperature on the ion acoustic wave in a relativistic plasma for a ratio of the ion flow velocity to the light velocity between 0 and 1. In this paper, the dependence of the phase velocity on the relativistic effect for different values of the ratio of the ion temperature to the electron temperature is studied. In case of weak relativistic effect (ratio of the ion flow velocity to the light velocity is 10 -6 and the step of the representation is 10 -6 ) we noticed the occurrence of an antisoliton within soliton amplitude graphical representation as function of the relativistic effect and the temperature ratio. The novelty of this article consists in the fact that a much smaller interval is considered for velocity ratio (size) and we studied the influence of ion temperature on ion acoustic wave in a collisionless relativistic plasma. We performed the numerical calculation of equations and we plotted the phase velocity and the amplitude of soliton wave as a function of velocity ratio and the temperature ratio. We considered the step of velocity ratio variation equal with 10 -6 and the step of temperature ratio variation 10 -2 . The observation made in this paper refines the results of other authors who studied these equations for velocity ratio variation of 10 -1 . In herein chosen interval we observed new phenomena that were not noticed in the case of choosing larger intervals. (author)

  12. Hydrogen diffusion between plasma-deposited silicon nitride-polyimide polymer interfaces

    International Nuclear Information System (INIS)

    Nguyen, S.V.; Kerbaugh, M.

    1988-01-01

    This paper reports a nuclear reaction analysis (NRA) for hydrogen technique used to analyze the hydrogen concentration near plasma enhanced chemical vapor deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF 4 + O 2 (8% O 2 ) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate

  13. Unified theory of ballooning instabilities and temperature gradient driven trapped ion modes

    International Nuclear Information System (INIS)

    Xu, X.Q.

    1990-08-01

    A unified theory of temperature gradient driven trapped ion modes and ballooning instabilities is developed using kinetic theory in banana regimes. All known results, such as electrostatic and purely magnetic trapped particle modes and ideal MHD ballooning modes (or shear Alfven waves) are readily derived from our single general dispersion relation. Several new results from ion-ion collision and trapped particle modification of ballooning modes are derived and discussed and the interrelationship between those modes is established. 24 refs

  14. Ohmic ion temperature and thermal diffusivity profiles from the JET neutron emission profile monitor

    Energy Technology Data Exchange (ETDEWEB)

    Esposito, B. (ENEA, Frascati (Italy). Centro Ricerche Energia); Marcus, F.B.; Conroy, S.; Jarvis, O.N.; Loughlin, M.J.; Sadler, G.; Belle, P. van (Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking); Adams, J.M.; Watkins, N. (AEA Industrial Technology, Harwell (United Kingdom))

    1993-10-01

    The JET neutron emission profile monitor was used to study ohmically heated deuterium discharges. The radial profile of the neutron emissivity is deduced from the line-integral data. The profiles of ion temperature, T[sub i], and ion thermal diffusivity, [chi][sub i], are derived under steady-state conditions. The ion thermal diffusivity is higher than, and its scaling with plasma current opposite to, that predicted by neoclassical theory. (author).

  15. Ohmic ion temperature and thermal diffusivity profiles from the JET neutron emission profile monitor

    International Nuclear Information System (INIS)

    Esposito, B.

    1993-01-01

    The JET neutron emission profile monitor was used to study ohmically heated deuterium discharges. The radial profile of the neutron emissivity is deduced from the line-integral data. The profiles of ion temperature, T i , and ion thermal diffusivity, χ i , are derived under steady-state conditions. The ion thermal diffusivity is higher than, and its scaling with plasma current opposite to, that predicted by neoclassical theory. (author)

  16. Formation of Wear Resistant Steel Surfaces by Plasma Immersion Ion Implantation

    Science.gov (United States)

    Mändl, S.; Rauschenbach, B.

    2003-08-01

    Plasma immersion ion implantation (PIII) is a versatile and fast method for implanting energetic ions into large and complex shaped three-dimensional objects where the ions are accelerated by applying negative high voltage pulses to a substrate immersed in a plasma. As the line-of-sight restrictions of conventional implanters are circumvented, it results in a fast and cost-effective technology. Implantation of nitrogen at 30 - 40 keV at moderate temperatures of 200 - 400 °C into steel circumvents the diminishing thermal nitrogen activation encountered, e.g., in plasma nitriding in this temperature regime, thus enabling nitriding of additional steel grades. Nitride formation and improvement of the mechanical properties after PIII are presented for several steel grades, including AISI 316Ti (food industry), AISI D2 (used for bending tools) and AISI 1095 (with applications in the textile industry).

  17. Formation of Wear Resistant Steel Surfaces by Plasma Immersion Ion Implantation

    International Nuclear Information System (INIS)

    Maendl, S.; Rauschenbach, B.

    2003-01-01

    Plasma immersion ion implantation (PIII) is a versatile and fast method for implanting energetic ions into large and complex shaped three-dimensional objects where the ions are accelerated by applying negative high voltage pulses to a substrate immersed in a plasma. As the line-of-sight restrictions of conventional implanters are circumvented, it results in a fast and cost-effective technology. Implantation of nitrogen at 30 - 40 keV at moderate temperatures of 200 - 400 deg. C into steel circumvents the diminishing thermal nitrogen activation encountered, e.g., in plasma nitriding in this temperature regime, thus enabling nitriding of additional steel grades. Nitride formation and improvement of the mechanical properties after PIII are presented for several steel grades, including AISI 316Ti (food industry), AISI D2 (used for bending tools) and AISI 1095 (with applications in the textile industry)

  18. Mass analyzer ``MASHA'' high temperature target and plasma ion source

    Science.gov (United States)

    Semchenkov, A. G.; Rassadov, D. N.; Bekhterev, V. V.; Bystrov, V. A.; Chizov, A. Yu.; Dmitriev, S. N.; Efremov, A. A.; Guljaev, A. V.; Kozulin, E. M.; Oganessian, Yu. Ts.; Starodub, G. Ya.; Voskresensky, V. M.; Bogomolov, S. L.; Paschenko, S. V.; Zelenak, A.; Tikhonov, V. I.

    2004-05-01

    A new separator and mass analyzer of super heavy atoms (MASHA) has been created at the FLNR JINR Dubna to separate and measure masses of nuclei and molecules with precision better than 10-3. First experiments with the FEBIAD plasma ion source have been done and give an efficiency of ionization of up to 20% for Kr with a low flow test leak (6 particle μA). We suppose a magnetic field optimization, using the additional electrode (einzel lens type) in the extracting system, and an improving of the vacuum conditions in order to increase the ion source efficiency.

  19. Mass analyzer 'MASHA' high temperature target and plasma ion source

    International Nuclear Information System (INIS)

    Semchenkov, A.G.; Rassadov, D.N.; Bekhterev, V.V.; Bystrov, V.A.; Chizov, A.Yu.; Dmitriev, S.N.; Efremov, A.A.; Guljaev, A.V.; Kozulin, E.M.; Oganessian, Yu.Ts.; Starodub, G.Ya.; Voskresensky, V.M.; Bogomolov, S.L.; Paschenko, S.V.; Zelenak, A.; Tikhonov, V.I.

    2004-01-01

    A new separator and mass analyzer of super heavy atoms (MASHA) has been created at the FLNR JINR Dubna to separate and measure masses of nuclei and molecules with precision better than 10 -3 . First experiments with the FEBIAD plasma ion source have been done and give an efficiency of ionization of up to 20% for Kr with a low flow test leak (6 particle μA). We suppose a magnetic field optimization, using the additional electrode (einzel lens type) in the extracting system, and an improving of the vacuum conditions in order to increase the ion source efficiency

  20. High ion temperatures from buried layers irradiated with Vulcan Petawatt

    International Nuclear Information System (INIS)

    Karsch, S.; Schreiber, J.; Willingale, L.; Lancaster, K.; Habara, H.; Nilson, P.; Gopal, A.; Wei, M. S.; Stoeckl, C.; Evans, R.; Clarke, R.; Heathcote, R.; Najmudin, Z.; Krushelnick, K.; Neely, D.; Norreys, P. A.

    2005-01-01

    Deuteron acceleration from CH/CD/CH layer targets irradiated with PW laser pulses has been studied using. Thomson parabola spectrometers and neutron TOF spectroscopy. The measured ion and neutron spectra reveal significant MeV deuteron acceleration from the deeply buried CD layer, which scales with the thickness of the overlying CH layer. While the neutron spectra reveal the scaling of the thermal heating with target thickness, the ion spectra indicate the presence of an efficient nonthermal acceleration mechanism inside. the bulk. Possible explanations will be discussed. (Author)

  1. Mineralizer-assisted high-pressure high-temperature synthesis and characterization of novel phosphorus nitride imides and luminescent alkaline earth metal (oxo)nitridophosphates

    International Nuclear Information System (INIS)

    Marchuk, Alexey

    2016-01-01

    The main objectives of this thesis were the synthesis, identification and structural characterization of new alkaline earth metal (oxo)nitridophopshates and phosphorus nitrides. Furthermore, luminescence properties of the resulting materials should be investigated and a connection between these properties and the respective structures should be established. For this purpose, a range of synthesis strategies was employed, including conventional solid-state syntheses in silica ampoules and high-pressure high-temperature syntheses using the multianvil technique. The emphasis of the synthetic part of this thesis lies on the development of new synthetic strategies in order to increase crystallinity of alkaline earth metal (oxo)nitridophosphates and thus accelerate their structure determination. This involves the selection of a suitable mineralizer and the investigation of its interaction with the respective starting materials. In addition, the analytical methods applied in this thesis in order to identify and characterize the compounds are just as essential as the synthesis strategies. X-ray diffraction on single crystals and on powders was carried out as the main analytical method while being supported by quantitative and qualitative 1 H and 31 P solid-state NMR measurements, FTIR and energy-dispersive X-ray (EDX) spectroscopy, as well as electron microscopy methods including both imaging and diffraction techniques. Implied by the large number of novel structures investigated, theoretical studies including topological analysis, calculations of lattice energies and bond-valence sums also played a major role in this thesis. Optical analysis methods such as reflectance spectroscopy, luminescence microscopy and photoluminescence measurements helped to determine the luminescence properties of some of the presented compounds.

  2. Comparative study involving the uranium determination through catalytic reduction of nitrates and nitrides by using decoupled plasma nitridation (DPN)

    International Nuclear Information System (INIS)

    Aguiar, Marco Antonio Souza; Gutz, Ivano G. Rolf

    1999-01-01

    This paper reports a comparative study on the determination of uranium through the catalytic reduction of nitrate and nitride using the decoupled plasma nitridation. The uranyl ions are a good catalyst for the reduction of NO - 3 and NO - 2 ions on the surface of a hanging drop mercury electrode (HDME). The presence of NO - in a solution with p H = 3 presented a catalytic signal more intense than the signal obtained with NO - 3 (concentration ten times higher). A detection limit of 1x10 9 M was obtained using the technique of decoupled plasma nitridation (DPN), suggesting the development of a sensitive way for the determination of uranium in different matrixes

  3. Lithium-ion Energy Storage at Very Low Temperatures, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Li-ion batteries with specific energy >180 Wh/kg, calendar life (>15years), and a wide operating temperature range (-60oC to 60oC) are crucial for the...

  4. ICF implosion hotspot ion temperature diagnostic techniques based on neutron time-of-flight method

    International Nuclear Information System (INIS)

    Tang Qi; Song Zifeng; Chen Jiabin; Zhan Xiayu

    2013-01-01

    Ion temperature of implosion hotspot is a very important parameter for inertial confinement fusion. It reflects the energy level of the hotspot, and it is very sensitive to implosion symmetry and implosion speed. ICF implosion hotspot ion temperature diagnostic techniques based on neutron time-of-flight method were described. A neutron TOF spectrometer was developed using a ultrafast plastic scintillator as the neutron detector. Time response of the spectrometer has 1.1 ns FWHM and 0.5 ns rising time. TOF spectrum resolving method based on deconvolution and low pass filter was illuminated. Implosion hotspot ion temperature in low neutron yield and low ion temperature condition at Shenguang-Ⅲ facility was acquired using the diagnostic techniques. (authors)

  5. Effects of heavy ion temperature on low-frequency kinetic Alfven waves

    International Nuclear Information System (INIS)

    Yang, L.; Wu, D. J.

    2011-01-01

    Heavy ion-electron (or proton) temperature ratio varies in a wide range in the solar and space environment. In this paper, proton and heavy ion temperatures are included in a three-fluid plasma model. For the specified parameters, low-frequency (<< heavy ion gyrofrequency) kinetic Alfven waves (KAWs) with sub- and super-Alfvenic speeds are found to coexist in the same plasma environment. Our results show that the temperature ratio of heavy ions to electrons can considerably affect the dispersion, propagation, and electromagnetic polarizations of the KAWs. In particular, the temperature ratio can increase the ratio of parallel to perpendicular electric fields and the normalized electric to magnetic field ratio, the variations of which are greatly different in regions with a high heavy ion temperature and with a low one. The results may help to understand the physical mechanism of some energization processes of heavy ions in the solar and space plasma environment. Effects of the ratio of electron thermal to Alfven speeds and the heavy ion abundance on these parameters are also discussed.

  6. High-resolution X-ray spectra from low-temperature, highly charged ions

    International Nuclear Information System (INIS)

    Beiersdorfer, P.

    1996-09-01

    The electron beam ion traps (EBIT) at Livermore were designed for studying the x-ray emission of highly charged ions produced and excited by a monoenergetic electron beam. The precision with which the x-ray emission can be analyzed has recently been increased markedly when it became possible to decouple the temperature of the ions from the energy of the electron beam by several orders of magnitude. By adjusting the trap parameters, ion temperatures as low as 15.8±4.4 eV for Ti 20+ and 59.4±9.9 eV for Cs 45+ were achieved. These temperatures were more than two orders of magnitude lower than the energy of the multi-keV electron beam used for the production and excitation of the ions. A discussion of the techniques used to produce and study low-temperature highly charged ions is presented in this progress report. The low ion temperatures enabled measurements heretofore impossible. As an example, a direct observation of the natural line width of fast electric dipole allowed x-ray transitions is described. From the observed natural line width and b making use of the time-energy relations of the uncertainty principle we were able to determine a radiative transition rate of 1.65 fs for the 2p-3d resonance transition in neonlike Cs 45+ . A brief discussion of other high-precision measurements enabled by our new technique is also given

  7. Ion temperature effects on magnetotail Alfvén wave propagation and electron energization: ION TEMPERATURE EFFECTS ON ALFVÉN WAVES

    Energy Technology Data Exchange (ETDEWEB)

    Damiano, P. A. [Princeton Center for Heliophysics, Princeton Plasma Physics Laboratory, Princeton University, Princeton New Jersey USA; Johnson, J. R. [Princeton Center for Heliophysics, Princeton Plasma Physics Laboratory, Princeton University, Princeton New Jersey USA; Chaston, C. C. [Space Sciences Laboratory, University of California, Berkeley California USA; School of Physics, University of Sydney, Sydney New South Wales Australia

    2015-07-01

    A new 2-D self-consistent hybrid gyrofluid-kinetic electron model in dipolar coordinates is presented and used to simulate dispersive-scale Alfvén wave pulse propagation from the equator to the ionosphere along an L = 10 magnetic field line. The model is an extension of the hybrid MHD-kinetic electron model that incorporates ion Larmor radius corrections via the kinetic fluid model of Cheng and Johnson (1999). It is found that consideration of a realistic ion to electron temperature ratio decreases the propagation time of the wave from the plasma sheet to the ionosphere by several seconds relative to a ρi=0 case (which also implies shorter timing for a substorm onset signal) and leads to significant dispersion of wave energy perpendicular to the ambient magnetic field. Additionally, ion temperature effects reduce the parallel current and electron energization all along the field line for the same magnitude perpendicular electric field perturbation.

  8. A possibility of local measurements of ion temperature in a high-temperature plasma by laser induced ionization

    International Nuclear Information System (INIS)

    Kantor, M

    2012-01-01

    A new diagnostic for local measurements of ion temperature and drift velocity in fusion plasmas is proposed in the paper. The diagnostic is based on laser induced ionization of excited hydrogen and deuterium atoms from the levels which ionization energy less than the laser photon energy. A high intensive laser beam ionizes nearly all the excited atoms in the beam region resulting in a quench of spontaneous line emission of the appropriate optical transitions. The measurements of the quenching emission have been used in the past for local measurements of hydrogen atom density in tokamak plasma. The idea of the new diagnostic is spectral resolution of the quenching emission. The measured spectrum relates directly to the velocity distribution of the excited atoms. This distribution is strongly coupled to the distribution of the hydrogen atoms at the ground state. So, the spectral resolution of quenching emission is a way of local measurements of the temperature and drift velocity of hydrogen atoms in plasma. The temperature of hydrogen atoms is well coupled to the local ion temperature as long as the mean free path of the atoms is shorter than the ion gradient length in plasma. In this case the new diagnostic can provide local measurements of ion temperature in plasma. The paper considers technical capabilities of the diagnostic, physical restrictions of its application and interpretation of the measurements.

  9. Evidence for atomic scale disorder in indium nitride from perturbed angular correlation spectroscopy

    International Nuclear Information System (INIS)

    Dogra, R; Shrestha, S K; Byrne, A P; Ridgway, M C; Edge, A V J; Vianden, R; Penner, J; Timmers, H

    2005-01-01

    The crystal lattice of bulk grains and state-of-the-art films of indium nitride was investigated at the atomic scale with perturbed angular correlation spectroscopy using the 111 In/Cd radioisotope probe. The probe was introduced during sample synthesis, by diffusion and by ion implantation. The mean quadrupole interaction frequency ν Q = 28 MHz was observed at the indium probe site in all types of indium nitride samples with broad frequency distributions. The observed small, but non-zero, asymmetry parameter indicates broken symmetry around the probe atoms. Results have been compared with theoretical calculations based on the point charge model. The consistency of the experimental results and their independence of the preparation technique suggest that the origin of the broad frequency distribution is inherent to indium nitride, indicating a high degree of disorder at the atomic scale. Due to the low dissociation temperature of indium nitride, furnace and rapid thermal annealing at atmospheric pressure reduce the lattice disorder only marginally

  10. A new high-temperature plasma ion source for the TRISTAN ISOL facility

    International Nuclear Information System (INIS)

    Piotrowski, A.; Gill, R.L.; McDonald, D.C.

    1987-01-01

    A vigorous program of ion-source development at TRISTAN has led to several types of ion sources that are especially suited to extended operation at a reactor-based ISOL facility. The latest of these is a high-temperature plasma ion source in which a 5-g /sup 235/U target is located in the cathode and can be heated to 2500 0 C. The ion source has a lifetime of > 1000 h and produces a wide array of elements, including palladium. Off-line investigations indicate that the source functions primarily in an electron impact mode of ionization and exhibits typical ionization efficiencies of > 30% for xenon

  11. A new high-temperature plasma ion source for the TRISTAN ISOL facility

    International Nuclear Information System (INIS)

    Piotrowski, A.; Gill, R.L.; McDonald, D.C.

    1987-01-01

    A vigorous program of ion-source development at TRISTAN has led to several types of ion sources that are especially suited to extended operation at a reactor-based ISOL facility. The latest of these is a high-temperature plasma ion source in which a 5-g 235 U target is located in the cathode and can be heated to 2500 0 C. The ion source has a lifetime of >1000 h and produces a wide array of elements, including palladium. Off-line investigations indicate that the source functions primarily in an electron impact mode of ionization and exhibits typical ionization efficiencies of >30% for xenon. (orig.)

  12. New high temperature plasma ion source for the TRISTAN ISOL facility

    International Nuclear Information System (INIS)

    Piotrowski, A.; Gill, R.L.; McDonald, D.C.

    1986-08-01

    A vigorous program of ion source development at TRISTAN has led to several types of ion sources that are especially suited to extended operation at a reactor-based ISOL facility. The latest of these is a high temperature plasma ion source in which a 5 gm 235 U target is located in the cathode and can be heated to 2500 0 C. The ion source has a lifetime of >1000 hours and produces a wide array of elements, including Pd. Off-line investigations indicate that the source functions primarily in an electron impact mode of ionization and exhibits typical ionzation efficiencies of >30% for Xe

  13. Modeling the Gas Nitriding Process of Low Alloy Steels

    Science.gov (United States)

    Yang, M.; Zimmerman, C.; Donahue, D.; Sisson, R. D.

    2013-07-01

    The effort to simulate the nitriding process has been ongoing for the last 20 years. Most of the work has been done to simulate the nitriding process of pure iron. In the present work a series of experiments have been done to understand the effects of the nitriding process parameters such as the nitriding potential, temperature, and time as well as surface condition on the gas nitriding process for the steels. The compound layer growth model has been developed to simulate the nitriding process of AISI 4140 steel. In this paper the fundamentals of the model are presented and discussed including the kinetics of compound layer growth and the determination of the nitrogen diffusivity in the diffusion zone. The excellent agreements have been achieved for both as-washed and pre-oxided nitrided AISI 4140 between the experimental data and simulation results. The nitrogen diffusivity in the diffusion zone is determined to be constant and only depends on the nitriding temperature, which is ~5 × 10-9 cm2/s at 548 °C. It proves the concept of utilizing the compound layer growth model in other steels. The nitriding process of various steels can thus be modeled and predicted in the future.

  14. Ion Temperature Measurements in the Tore Supra Scrape-Off Layer Using a Retarding Field Analyzer

    International Nuclear Information System (INIS)

    Kocan, M.; Gunn, J.P.; Pascal, J.Y.; Gauthier, E.

    2010-01-01

    The retarding field analyzer (RFA) is one of the only widely accepted diagnostics for measuring the ion temperature T i )in the tokamak scrape-off layer. An overview of the outstanding RFA performance over ten years of operation in Tore Supra tokamak is given and the validation of T i measurements is addressed. The RFA measurements in Tore Supra are found to be well reproducible. The ion-to-electron temperature ratio is higher than one at low-to-moderate ion-electron collisionality regime and converges to unity at high collisionality regime. (authors)

  15. Samarium ion exchanged montmorillonite for high temperature cumene cracking reaction

    International Nuclear Information System (INIS)

    Binitha, N.N.

    2009-01-01

    Full text: Nano material Montmorillonite clay is cation exchanged with samarium and its catalytic influence in cumene cracking reaction is investigated. Effect of exchange with sodium ions on further exchange with samarium ions is also noted. Acidity measurements are done using TPD of ammonia. The retention of basic structure is proved from FTIR spectra and XRD patterns. Elemental analysis result shows that samarium exchange has occurred, which is responsible for the higher catalytic activity. Surface area and pore volume remains more or less unaffected upon exchange. Thermogravimetric analysis indicates the enhanced thermal stability on exchanging. Cumene cracking reaction is carried out at atmospheric pressure in a fixed bed glass reactor at 673 K. The predominance of Bronsted acidity is confirmed from high selectivity to benzene. (author)

  16. Nitriding behavior of Ni and Ni-based binary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Fonovic, Matej

    2015-01-15

    Gaseous nitriding is a prominent thermochemical surface treatment process which can improve various properties of metallic materials such as mechanical, tribological and/or corrosion properties. This process is predominantly performed by applying NH{sub 3}+H{sub 2} containing gas atmospheres serving as the nitrogen donating medium at temperatures between 673 K and 873 K (400 C and 600 C). NH{sub 3} decomposes at the surface of the metallic specimen and nitrogen diffuses into the surface adjacent region of the specimen whereas hydrogen remains in the gas atmosphere. One of the most important parameters characterizing a gaseous nitriding process is the so-called nitriding potential (r{sub N}) which determines the chemical potential of nitrogen provided by the gas phase. The nitriding potential is defined as r{sub N} = p{sub NH{sub 3}}/p{sub H{sub 2}{sup 3/2}} where p{sub NH{sub 3}} and p{sub H{sub 2}} are the partial pressures of the NH{sub 3} and H{sub 2} in the nitriding atmosphere. In contrast with nitriding of α-Fe where the nitriding potential is usually in the range between 0.01 and 1 atm{sup -1/2}, nitriding of Ni and Ni-based alloys requires employing nitriding potentials higher than 100 atm{sup -1/2} and even up to ∞ (nitriding in pure NH{sub 3} atmosphere). This behavior is compatible with decreased thermodynamic stability of the 3d-metal nitrides with increasing atomic number. Depending on the nitriding conditions (temperature, nitriding potential and treatment time), different phases are formed at the surface of the Ni-based alloys. By applying very high nitriding potential, formation of hexagonal Ni{sub 3}N at the surface of the specimen (known as external nitriding) leads to the development of a compound layer, which may improve tribological properties. Underneath the Ni{sub 3}N compound layer, two possibilities exist: (i) alloying element precipitation within the nitrided zone (known as internal nitriding) and/or (ii) development of metastable and

  17. Temperature dependent mobility measurements of alkali earth ions in superfluid helium

    Science.gov (United States)

    Putlitz, Gisbert Zu; Baumann, I.; Foerste, M.; Jungmann, K.; Riediger, O.; Tabbert, B.; Wiebe, J.; Zühlke, C.

    1998-05-01

    Mobility measurements of impurity ions in superfluid helium are reported. Alkali earth ions were produced with a laser sputtering technique and were drawn inside the liquid by an electric field. The experiments were carried out in the temperature region from 1.27 up to 1.66 K. The temperature dependence of the mobility of Be^+-ions (measured here for the first time) differs from that of the other alkali earth ions Mg^+, Ca^+, Sr^+ and Ba^+, but behaves similar to that of He^+ (M. Foerste, H. Günther, O. Riediger, J. Wiebe, G. zu Putlitz, Z. Phys. B) 104, 317 (1997). Theories of Atkins (A. Atkins, Phys. Rev.) 116, 1339 (1959) and Cole (M.W. Cole, R.A. Bachmann Phys. Rev. B) 15, 1388 (1977) predict a different defect structure for He^+ and the alkali earth ions: the helium ion is assumed to form a snowball like structure whereas for the alkali earth ions a bubble structure is assumed. If the temperature dependence is a characteristic feature for the different structures, then it seems likely that the Be^+ ion builds a snowball like structure.

  18. Plasma nitriding - an eco friendly surface hardening process

    International Nuclear Information System (INIS)

    Mukherjee, S.

    2015-01-01

    Surface hardening is a process of heating the metal such that the surface gets only hardened. This process is adopted for many components like gears, cams, and crankshafts, which desire high hardness on the outer surface with a softer core to withstand the shocks. So, to attain such properties processes like carburising, nitriding, flame hardening and induction hardening are employed. Amongst these processes nitriding is the most commonly used process by many industries. In nitriding process the steel material is heated to a temperature of around 550 C and then exposed to atomic nitrogen. This atomic nitrogen reacts with iron and other alloying elements and forms nitrides, which are very hard in nature. By this process both wear resistance and hardness of the product can be increased. The atomic nitrogen required for this process can be obtained using ammonia gas (gas nitriding), cyanide based salt bath (liquid nitriding) and plasma medium (plasma nitriding). However, plasma nitriding has recently received considerable industrial interest owing to its characteristic of faster nitrogen penetration, short treatment time, low process temperature, minimal distortion, low energy use and easier control of layer formation compared with conventional techniques such as gas and liquid nitriding. This process can be used for all ferrous materials including stainless steels. Plasma nitriding is carried out using a gas mixture of nitrogen and hydrogen gas at sub atmospheric pressures hence, making it eco-friendly in nature. Plasma nitriding allows modification of the surface layers and hardness profiles by changing the gas mixture and temperature. The wide applicable temperature range enables a multitude of applications, beyond the possibilities of gas or salt bath processes. This has led to numerous applications of this process in industries such as the manufacture of machine parts for plastics and food processing, packaging and tooling as well as pumps and hydraulic, machine

  19. Considerations from the viewpoint of neoclassical transport towards higher ion temperature heliotron plasmas

    International Nuclear Information System (INIS)

    Yokoyama, M.; Matsuoka, S.; Funaba, H.; Ida, K.; Nagaoka, K.; Yoshinuma, M.; Takeiri, Y.; Kaneko, O.

    2010-01-01

    The neoclassical (NC) transport analyses have been performed to elucidate the plausible approaches towards higher ion-temperature heliotron plasmas. Avoidance of the ripple transport is the key issue, for which the neoclassical ambipolar radial electric field (E r ) can be utilized. The ion-root scenario and the electron-root scenario are expected to be effective according to the experimental situation (especially, the temperature ratio between ions and electrons). The impact of the ion mass on the neoclassical ambipolar E r is also investigated to reveal the easier realization of electron-root E r in heavier ion plasmas. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Impact of temperature on single event upset measurement by heavy ions in SRAM devices

    International Nuclear Information System (INIS)

    Liu Tianqi; Geng Chao; Zhang Zhangang; Gu Song; Tong Teng; Xi Kai; Hou Mingdong; Liu Jie; Zhao Fazhan; Liu Gang; Han Zhengsheng

    2014-01-01

    The temperature dependence of single event upset (SEU) measurement both in commercial bulk and silicon on insulator (SOI) static random access memories (SRAMs) has been investigated by experiment in the Heavy Ion Research Facility in Lanzhou (HIRFL). For commercial bulk SRAM, the SEU cross section measured by 12 C ions is very sensitive to the temperature. The temperature test of SEU in SOI SRAM was conducted by 209 Bi and 12 C ions, respectively, and the SEU cross sections display a remarkable growth with the elevated temperature for 12 C ions but keep constant for 209 Bi ions. The impact of temperature on SEU measurement was analyzed by Monte Carlo simulation. It is revealed that the SEU cross section is significantly affected by the temperature around the threshold linear energy transfer of SEU occurrence. As the SEU occurrence approaches saturation, the SEU cross section gradually exhibits less temperature dependency. Based on this result, the experimental data measured in HIRFL was analyzed, and then a reasonable method of predicting the on-orbit SEU rate was proposed. (semiconductor devices)

  1. Codeposition of deuterium ions with beryllium oxide at elevated temperatures

    CERN Document Server

    Markin, A V; Gorodetsky, A E; Negodaev, M A; Rozhanskii, N V; Scaffidi-Argentina, F; Werle, H; Wu, C H; Zalavutdinov, R K; Zakharov, A P

    2000-01-01

    Deuterium-loaded BeO films were produced by sputtering the beryllium target with 10 keV Ne ions in D sub 2 gas at a pressure of approximately 1 Pa. The sputtered beryllium reacts - on the substrate surface - with the residual oxygen, thus forming a beryllium oxide layer. Biasing the substrate negatively with respect to the target provides the simultaneous bombardment of the growing film surface with D ions formed by Ne-D sub 2 collisions. Substrate potential governs the maximum energy of ions striking the growing film surface while its size governs the flux density. According to X-ray photoelectron spectroscopy (XPS), electron probe microanalysis (EPMA) and reflection high energy electron diffraction (RHEED) data, the beryllium is deposited in the form of polycrystalline hcp-BeO layers with negligible (about 1 at.%) carbon and neon retention. Thermal desorption spectroscopy (TDS) data shows a strong deuterium bonding, with a desorption peak at 950 K, in the films deposited at -50 and -400 V substrate potentia...

  2. Effect of nitrogen ion dose on the corrosion resistance, the microstructure and the phase structure of the biomaterials austenitic stainless steel 316L

    International Nuclear Information System (INIS)

    Lely Susita RM; Bambang Siswanto; Ihwanul Aziz; Anjar Anggraini H

    2016-01-01

    The succeed of the use of biomaterials for orthopedic implant device is determined by its mechanical properties, chemical stability and biocompatibility in tissues and body fluids. The corrosion resistance is one of the main property of biomaterials to determine for successful orthopedic implant in body tissues. Surface modification is carried out to improve biomaterial surface properties of austenitic stainless steel 316L with nitrogen ion implantation technique and ion nitriding. Nitrogen ion implantation performed on 60 keV ion energy and ion dose variations 2 x 10"1"6 ions/cm"2- 2 x 10"1"7 ions/cm"2. The corrosion resistance of austenitic stainless steel 316L in Hanks solution is measured by using a potentiostat, and corrosion resistance optimum of a sample is obtained at an ion dose of 5 x 10"1"6 ions/cm"2 and increase by a factor of 2.1 if compared to the sample without the nitrogen ion implantation. Further the sample of austenitic stainless steel 316L with the optimum corrosion resistance is processed by ion nitriding technique at a nitriding temperature of 350 °C and nitriding time of 4 hours. Based on corrosion test of the sample produced by ion nitriding is obtained an increasing the corrosion resistance by a factor of 2.96 when compared to the sample before nitrogen ion implantation. The improvement of corrosion resistance of the sample is caused by the formation of iron nitride ξ-Fe2N and γ- Fe4N which has excellent corrosion resistance properties. (author)

  3. On the electron-ion temperature ratio established by collisionless shocks

    Science.gov (United States)

    Vink, Jacco; Broersen, Sjors; Bykov, Andrei; Gabici, Stefano

    2015-07-01

    Astrophysical shocks are often collisionless shocks, in which the changes in plasma flow and temperatures across the shock are established not through Coulomb interactions, but through electric and magnetic fields. An open question about collisionless shocks is whether electrons and ions each establish their own post-shock temperature (non-equilibration of temperatures), or whether they quickly equilibrate in the shock region. Here we provide a simple, thermodynamic, relation for the minimum electron-ion temperature ratios that should be expected as a function of Mach number. The basic assumption is that the enthalpy-flux of the electrons is conserved separately, but that all particle species should undergo the same density jump across the shock, in order for the plasma to remain charge neutral. The only form of additional electron heating that we allow for is adiabatic heating, caused by the compression of the electron gas. These assumptions result in an analytic treatment of expected electron-ion temperature ratio that agrees with observations of collisionless shocks: at low sonic Mach numbers, Ms ≲ 2, the electron-ion temperature ratio is close to unity, whereas for Mach numbers above Ms ≈ 60 the electron-ion temperature ratio asymptotically approaches a temperature ratio of Te/Ti = me/ ⟨ mi ⟩. In the intermediate Mach number range the electron-ion temperature ratio scales as Te/Ti ∝ Ms-2. In addition, we calculate the electron-ion temperature ratios under the assumption of adiabatic heating of the electrons only, which results in a higher electron-ion temperature ratio, but preserves the Te/Ti ∝ Ms-2 scaling. We also show that for magnetised shocks the electron-ion temperature ratio approaches the asymptotic value Te/Ti = me/ ⟨ mi ⟩ for lower magnetosonic Mach numbers (Mms), mainly because for a strongly magnetised shock the sonic Mach number is larger than the magnetosonic Mach number (Mms ≤ Ms). The predicted scaling of the electron-ion

  4. Ion temperatures in HIP-1 and SUMMA from charge-exchange neutral optical emission spectra

    Science.gov (United States)

    Patch, R. W.; Lauver, M. R.

    1976-01-01

    Ion temperatures were obtained from observations of the H sub alpha, D sub alpha, and He 587.6 nm lines emitted from hydrogen, deuterium, and helium plasmas in the SUMMA and HIP-1 mirror devices at Lewis Research Center. Steady state discharges were formed by applying a radially inward dc electric field between cylindrical or annular anodes and hollow cathodes located at the peaks of the mirrors. The ion temperatures were found from the Doppler broadening of the charge-exchange components of spectral lines. A statistical method was developed for obtaining scaling relations of ion temperature as a function of current, voltage, and magnetic flux density. Derivations are given that take into account triangular monochromator slit functions, loss cones, and superimposed charge-exchange processes. In addition, the Doppler broadening was found to be sensitive to the influence of drift on charge-exchange cross section. The effects of finite ion-cyclotron radius, cascading, and delayed emission are reviewed.

  5. Rate coefficients for the reactions of ions with polar molecules at interstellar temperatures

    International Nuclear Information System (INIS)

    Adams, N.G.; Smith, D.; Clary, D.C.

    1985-01-01

    A theory has been developed recently which predicts that the rate coefficients, k, for the reactions of ions with polar molecules at low temperatures will be much greater than the canonical value of 10 -9 cm 3 s -1 . The new theory indicates that k is greatest for low-lying rotational sates and increases rapidly with decreasing temperature. We refer to recent laboratory measurements which validate the theory, present calculated values of k for the reactions of H + 3 ions with several polar molecules, and discuss their significance to interstellar chemistry. For the reactions of ions with molecules having large dipole moments, we recommend that k values as large as 10 -7 cm 3 s -1 should be used in ion-chemical models of low-temperature interstellar clouds

  6. Characterization of low temperature metallic magnetic calorimeters having gold absorbers with implanted $^{163}$Ho ions

    CERN Document Server

    Gastaldo, L.; von Seggern, F.; Porst, J.-P.; Schäfer, S.; Pies, C.; Kempf, S.; Wolf, T.; Fleischmann, A.; Enss, C.; Herlert, A.; Johnston, K.

    2013-01-01

    For the first time we have investigated the behavior of fully micro-fabricated low temperature metallic magnetic calorimeters (MMCs) after undergoing an ion-implantation process. This experiment had the aim to show the possibility to perform a high precision calorimetric measurement of the energy spectrum following the electron capture of $^{163}$Ho using MMCs having the radioactive $^{163}$Ho ions implanted in the absorber. The implantation of $^{163}$Ho ions was performed at ISOLDE-CERN. The performance of a detector that underwent an ion-implantation process is compared to the one of a detector without implanted ions. The results show that the implantation dose of ions used in this experiment does not compromise the properties of the detector. In addition an optimized detector design for future $^{163}$Ho experiments is presented.

  7. Temperature effects on interaction of positive ions with plastic detectors

    International Nuclear Information System (INIS)

    Mendoza Anaya, D.

    1992-01-01

    The range of heavy charged particles in matter is dependent mainly on two groups of parameters, one related to the particle characteristics (charge z, mass m, energy E) and the other characterized by the stopping medium (charge z, density ρ). Those two groups are enough to describe the particle energy lost, which is related to the residual range. Research on charge particles registration using solid state nuclear track detectors (SSNTD), probe that environmental parameters affect the stabilization and formation of the tracks. One of those, is the temperature detector which shows an important effect during the irradiation on the characteristics of the tracks produced. In order to study the dependence of track geometry as a function of irradiation temperature, some SSNTD (CR 39 type) were irradiated with α particles and fission fragments. Results of this work show the existence of irradiation temperature effect on the track geometry. It is observed a reduction of length and diameters, as temperature increases. For low irradiation temperatures, there is a reduction of the track geometry, as compared with environmental temperature. (Author)

  8. Effect of the diameter and depth of pinholes on surface characteristics in the DC pulse plasma nitriding process

    International Nuclear Information System (INIS)

    Calahonra, M.C.G; Egidi, D.A; Svoboda, H; Corengia, P

    2006-01-01

    The ion nitriding treatment is a process widely used in steel alloys to improve the material's properties; such as surface hardness, resistance to wear, fatigue life and resistance to corrosion. But geometric changes in the components can produce during the nitriding process different effects on the behavior of the plasma, such as local variations in the electric field, an empty cathode effect, etc. These in turn can affect among other factors the local temperature and therefore the kinetics of the process, generating variations in the compound layer thicknesses and zone of diffusion, and micro-hardness profile. These heterogeneities limit the effectiveness of the plasma nitriding process, where control and duplication of the surface modification are most important. This work aims to study the effect of the geometry of the pieces treated with ionic nitriding, especially the effect of the orifices. An understanding of the operating mechanisms is sought in order to predict the development of the compound layer and zone of diffusion inside the pinholes. A series of orifices with different diameters and depths were machine made in AISI 4140 quenched and tempered cylindrical steel test pieces. The diameters analyzed were 2, 4, 6, 10 and 12 mm, while the depths studied were 3, 8 and 15 mm, resulting in 15 different configurations. The samples were nitrided by DC-pulse plasma in an industrial reactor, using a mixture of 75% H 2 - 25% N 2 , during 15 hours at a temperature of 500 o C. The nitrided test pieces were characterized with transverse sections using optic and scanning electron microscopy and Vickers micro-hardness profiles, measuring the thicknesses of white layer and zone of diffusion on the wall and base of the orifices. The results show that the sizes of the pinholes made in AISI 4140 steel greatly influence the uniformity and continuity of the compound layers and zones of diffusion. 'Critical diameters' for pinholes were also defined, underneath which the

  9. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    Energy Technology Data Exchange (ETDEWEB)

    Siddiqua, Poppy; O' Leary, Stephen K., E-mail: stephen.oleary@ubc.ca [School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia V1V 1V7 (Canada)

    2016-09-07

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  10. A thermal extrapolation method for the effective temperatures and internal energies of activated ions

    Science.gov (United States)

    Meot-Ner (Mautner), Michael; Somogyi, Árpád

    2007-11-01

    The internal energies of dissociating ions, activated chemically or collisionally, can be estimated using the kinetics of thermal dissociation. The thermal Arrhenius parameters can be combined with the observed dissociation rate of the activated ions using kdiss = Athermalexp(-Ea,thermal/RTeff). This Arrhenius-type relation yields the effective temperature, Teff, at which the ions would dissociate thermally at the same rate, or yield the same product distributions, as the activated ions. In turn, Teff is used to calculate the internal energy of the ions and the energy deposited by the activation process. The method yields an energy deposition efficiency of 10% for a chemical ionization proton transfer reaction and 8-26% for the surface collisions of various peptide ions. Internal energies of ions activated by chemical ionization or by gas phase collisions, and of ions produced by desorption methods such as fast atom bombardment, can be also evaluated. Thermal extrapolation is especially useful for ion-molecule reaction products and for biological ions, where other methods to evaluate internal energies are laborious or unavailable.

  11. Ion temperature in plasmas with intrinsic Alfven waves

    International Nuclear Information System (INIS)

    Wu, C. S.; Yoon, P. H.; Wang, C. B.

    2014-01-01

    This Brief Communication clarifies the physics of non-resonant heating of protons by low-frequency Alfvenic turbulence. On the basis of general definition for wave energy density in plasmas, it is shown that the wave magnetic field energy is equivalent to the kinetic energy density of the ions, whose motion is induced by the wave magnetic field, thus providing a self-consistent description of the non-resonant heating by Alfvenic turbulence. Although the study is motivated by the research on the solar corona, the present discussion is only concerned with the plasma physics of the heating process

  12. New aspects in plasmaspheric ion temperature variations from INTERBALL 2 and MAGION 5 measurements

    Czech Academy of Sciences Publication Activity Database

    Kotova, G.; Bezrukikh, V.; Verigin, M.; Šmilauer, Jan

    2008-01-01

    Roč. 70, 2-4 (2008), s. 399-406 ISSN 1364-6826 Institutional research plan: CEZ:AV0Z30420517 Keywords : Plasmasphere * Ion temperature * Electron temperature * Magnetic storm Subject RIV: JV - Space Technology Impact factor: 1.667, year: 2008

  13. Nano-nitride cathode catalysts of Ti, Ta, and Nb for polymer electrolyte fuel cells: Temperature-programmed desorption investigation of molecularly adsorbed oxygen at low temperature

    KAUST Repository

    Ohnishi, Ryohji; Takanabe, Kazuhiro; Katayama, Masao; Kubota, Jun; Domen, Kazunari

    2013-01-01

    -programmed desorption (TPD) of molecularly adsorbed O2 at 120-170 K from these nanoparticles was examined, and the resulting amount and temperature of desorption were key factors determining the ORR activity. The size-dependent TiN nanoparticles (5-8 and 100 nm) were

  14. Spectroscopic measurement of ion temperature and ion velocity distributions in the flux-coil generated FRC

    International Nuclear Information System (INIS)

    Gupta, D.; Gota, H.; Hayashi, R.; Kiyashko, V.; Morehouse, M.; Primavera, S.; Bolte, N.; Marsili, P.; Roche, T.; Wessel, F.

    2010-01-01

    One aim of the flux-coil generated field reversed configuration at Tri Alpha Energy (TAE) is to establish the plasma where the ion rotational energy is greater than the ion thermal energy. To verify this, an optical diagnostic was developed to simultaneously measure the Doppler velocity-shift and line-broadening using a 0.75 m, 1800 groves/mm, spectrometer. The output spectrum is magnified and imaged onto a 16-channel photomultiplier tube (PMT) array. The individual PMT outputs are coupled to high-gain, high-frequency, transimpedance amplifiers, providing fast-time response. The Doppler spectroscopy measurements, along with a survey spectrometer and photodiode-light detector, form a suite of diagnostics that provide insights into the time evolution of the plasma-ion distribution and current when accelerated by an azimuthal-electric field.

  15. Effect of irradiation temperature on microstructural changes in self-ion irradiated austenitic stainless steel

    Science.gov (United States)

    Jin, Hyung-Ha; Ko, Eunsol; Lim, Sangyeob; Kwon, Junhyun; Shin, Chansun

    2017-09-01

    We investigated the microstructural and hardness changes in austenitic stainless steel after Fe ion irradiation at 400, 300, and 200 °C using transmission electron microscopy (TEM) and nanoindentation. The size of the Frank loops increased and the density decreased with increasing irradiation temperature. Radiation-induced segregation (RIS) was detected across high-angle grain boundaries, and the degree of RIS increases with increasing irradiation temperature. Ni-Si clusters were observed using high-resolution TEM in the sample irradiated at 400 °C. The results of this work are compared with the literature data of self-ion and proton irradiation at comparable temperatures and damage levels on stainless steels with a similar material composition with this study. Despite the differences in dose rate, alloy composition and incident ion energy, the irradiation temperature dependence of RIS and the size and density of radiation defects followed the same trends, and were very comparable in magnitude.

  16. Ion- and electron-acoustic solitons in two-electron temperature space plasmas

    International Nuclear Information System (INIS)

    Lakhina, G. S.; Kakad, A. P.; Singh, S. V.; Verheest, F.

    2008-01-01

    Properties of ion- and electron-acoustic solitons are investigated in an unmagnetized multicomponent plasma system consisting of cold and hot electrons and hot ions using the Sagdeev pseudopotential technique. The analysis is based on fluid equations and the Poisson equation. Solitary wave solutions are found when the Mach numbers exceed some critical values. The critical Mach numbers for the ion-acoustic solitons are found to be smaller than those for electron-acoustic solitons for a given set of plasma parameters. The critical Mach numbers of ion-acoustic solitons increase with the increase of hot electron temperature and the decrease of cold electron density. On the other hand, the critical Mach numbers of electron-acoustic solitons increase with the increase of the cold electron density as well as the hot electron temperature. The ion-acoustic solitons have positive potentials for the parameters considered. However, the electron-acoustic solitons have positive or negative potentials depending whether the fractional cold electron density with respect to the ion density is greater or less than a certain critical value. Further, the amplitudes of both the ion- and electron-acoustic solitons increase with the increase of the hot electron temperature. Possible application of this model to electrostatic solitary waves observed on the auroral field lines by the Viking spacecraft is discussed

  17. Future Perspectives for the Application of Low Temperature Detectors in Heavy Ion Physics

    International Nuclear Information System (INIS)

    Egelhof, P.; Kraft-Bermuth, S.

    2009-01-01

    Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics is given, and the next generation heavy ion facility FAIR is described with a special emphasis on the potential advantage of Low Temperature Detectors (LTDs) for applications in heavy ion physics. For prototype LTDs for the energy sensitive detection of heavy ions excellent results with respect to energy resolution down to δE/E = 1-2x10 -3 for a wide range of incident energies, and with respect to other detector properties, such as energy linearity with no indication of pulse height defects even for the heaviest ions, have been obtained. In addition, prototype detectors for hard X-rays have shown energy resolutions down to δE = 30-40eV at 60 keV. Consequently, both detector schemes have already been successfully used for first experiments. At present, the design and setup of large solid angle detector arrays is in progress. With the already achieved performance, LTDs promise a large potential for applications in atomic and nuclear heavy ion physics. A brief overview of prominent examples, including high-resolution nuclear spectroscopy, nuclear structure studies with radioactive beams, superheavy element research, as well as high-resolution atomic spectroscopy on highly charged ions and tests of QED in strong electromagnetic fields is presented.

  18. Integrated heat transport simulation of high ion temperature plasma of LHD

    International Nuclear Information System (INIS)

    Murakami, S.; Yamaguchi, H.; Sakai, A.

    2014-10-01

    A first dynamical simulation of high ion temperature plasma with carbon pellet injection of LHD is performed by the integrated simulation GNET-TD + TASK3D. NBI heating deposition of time evolving plasma is evaluated by the 5D drift kinetic equation solver, GNET-TD and the heat transport of multi-ion species plasma (e, H, He, C) is studied by the integrated transport simulation code, TASK3D. Achievement of high ion temperature plasma is attributed to the 1) increase of heating power per ion due to the temporal increase of effective charge, 2) reduction of effective neoclassical transport with impurities, 3) reduction of turbulence transport. The reduction of turbulence transport is most significant contribution to achieve the high ion temperature and the reduction of the turbulent transport from the L-mode plasma (normal hydrogen plasma) is evaluated to be a factor about five by using integrated heat transport simulation code. Applying the Z effective dependent turbulent reduction model we obtain a similar time behavior of ion temperature after the C pellet injection with the experimental results. (author)

  19. Temperature measurement of {sup 6}He{sup + } ions confined in a transparent Paul trap

    Energy Technology Data Exchange (ETDEWEB)

    Flechard, X., E-mail: flechard@lpccaen.in2p3.fr; Ban, G.; Durand, D.; Lienard, E.; Mauger, F. [Universite de Caen, LPC Caen, ENSICAEN (France); Mery, A. [Universite de Caen, CIMAP, CEA/CNRS/ENSICAEN (France); Naviliat-Cuncic, O. [Universite de Caen, LPC Caen, ENSICAEN (France); Rodriguez, D. [Universitad de Granada, Departamento de Fisica Atomica, Molecular y Nuclear (Spain); Velten, P. [Universite de Caen, LPC Caen, ENSICAEN (France)

    2011-07-15

    The LPCTrap setup is a transparent Paul trap dedicated to the measurement of the {beta}-{nu} correlation coefficient a{sub {beta}{nu}} in the {beta} decay of trapped radioactive nuclides. In a first experiment, the system has been used to record {approx}10{sup 5} coincidences between the {beta} particles and recoiling ions emitted from the decay of {sup 6}He{sup + } ions. The analysis of the collected data has already shown that the size of the {sup 6}He{sup + } ion cloud confined in the Paul trap is a critical parameter, potentially limiting the accuracy on the a{sub {beta}{nu}} measurement. We report here the precise determination of the trapped ion cloud temperature and size. This was performed by extracting the trapped ions toward a position sensitive micro channel plate detector at different phases of the RF driving field. We find a temperature T{sub exp} = 0.107(7) eV, consistent with the temperature values inferred using two other observables but 20% higher than the temperature T{sub sim} = 0.09 eV predicted by realistic simulations of the ions interacting with the H{sub 2} buffer gas.

  20. Proton transfer and complex formation of angiotensin I ions with gaseous molecules at various temperature

    International Nuclear Information System (INIS)

    Nonose, Shinji; Yamashita, Kazuki; Sudo, Ayako; Kawashima, Minami

    2013-01-01

    Highlights: • Proton transfer from angiotensin I ions (z = 2, 3) to gaseous molecules was studied. • Temperature dependence of absolute reaction rate constants was measured. • Remarkable changes were obtained for distribution of product ions and reaction rate constants. • Proton transfer reaction was enhanced and reduced by complex formation. • Conformation changes are induced by complex formation and or by thermal collision with He. - Abstract: Proton transfer reactions of angiotensin I ions for +2 charge state, [M + 2H] 2+ , to primary, secondary and aromatic amines were examined in the gas phase. Absolute reaction rate constants for proton transfer were determined from intensities of parent and product ions in the mass spectra. Temperature dependence of the reaction rate constants was measured. Remarkable change was observed for distribution of product ions and reaction rate constants. Proton transfer reaction was enhanced or reduced by complex formation of [M + 2H] 2+ with gaseous molecules. The results relate to conformation changes of [M + 2H] 2+ with change of temperature, which are induced by complex formation and or by thermal collision with He. Proton transfer reactions of angiotensin I ions for +3 charge state, [M + 3H] 3+ , were also studied. The reaction rates did not depend on temperature so definitely

  1. Critical fields of niobium nitride films of various granularity

    International Nuclear Information System (INIS)

    Antonova, E.A.; Sukhov, V.A.

    1983-01-01

    The behaviour of lattice parameter, specific electrical resistivity, critical temperature, and temperature dependence of upper critical field near Tsub(cr) of sputtered niobium nitride films is investigated versus the substrate temperature and gas mixture composition in the process of reactive cathode sputtering. The relation between extrapolated value of the upper critical field and granularity of niobium nitride films, close as to composition to the stoichiometric one, has been found. Values of the kappa parameter of the Ginsburg-Landau theory and of the coherence length for niobium nitride films of various granularity are estimated in an approximation of uniform distribution of impurities in a sample

  2. Synthesis of Uranium nitride powders using metal uranium powders

    International Nuclear Information System (INIS)

    Yang, Jae Ho; Kim, Dong Joo; Oh, Jang Soo; Rhee, Young Woo; Kim, Jong Hun; Kim, Keon Sik

    2012-01-01

    Uranium nitride (UN) is a potential fuel material for advanced nuclear reactors because of their high fuel density, high thermal conductivity, high melting temperature, and considerable breeding capability in LWRs. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. The carbothermic reduction has an advantage in the production of fine powders. However it has many drawbacks such as an inevitable engagement of impurities, process burden, and difficulties in reusing of expensive N 15 gas. Manufacturing concerns issued in the carbothermic reduction process can be solved by changing the starting materials from oxide powder to metals. However, in nitriding process of metal, it is difficult to obtain fine nitride powders because metal uranium is usually fabricated in the form of bulk ingots. In this study, a simple reaction method was tested to fabricate uranium nitride powders directly from uranium metal powders. We fabricated uranium metal spherical powder and flake using a centrifugal atomization method. The nitride powders were obtained by thermal treating those metal particles under nitrogen containing gas. We investigated the phase and morphology evolutions of powders during the nitriding process. A phase analysis of nitride powders was also a part of the present work

  3. Development of pseudocapacitive molybdenum oxide–nitride for electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Ting, Yen-Jui Bernie [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Wu, Haoran [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Kherani, Nazir P. [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Lian, Keryn, E-mail: keryn.lian@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada)

    2015-03-15

    A thin film Mo oxide–nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 °C) thermal nitridation. Two nitridation environments, N{sub 2} and NH{sub 3}, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N{sub 2}. However, the electrochemical analyses showed that the surface of the N{sub 2}-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH{sub 3}. Cycle life of the resultant N{sub 2}-treated Mo oxide–nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide–nitride electrodes was demonstrated and showed high rate performance. - Highlights: • Mo(O,N){sub x} was developed by electrodeposition and nitridation in N{sub 2} or NH{sub 3}. • N{sub 2} treated Mo(O,N){sub x} showed a capacitive performance superior to that treated by NH{sub 3}. • The promising electrochemical performance was due to the formation of γ-Mo{sub 2}N.

  4. Tunnel probes for measurements of the electron and ion temperature in fusion plasmas

    Czech Academy of Sciences Publication Activity Database

    Gunn, J. P.; Schrittwieser, R.; Balan, P.; Ionita, C.; Stöckel, Jan; Adámek, Jiří; Ďuran, Ivan; Hron, Martin; Pánek, Radomír; Bařina, O.; Hrach, R.; Vicher, M.; Van Oost, G.; Van Rompuy, T.; Martines, E.

    2004-01-01

    Roč. 75, č. 10 (2004), s. 4328-4330 ISSN 0034-6748. [Topical Conference on High-Temperature Plasma Diagnostics/15th./. San Diego, 19.04.2004-22.04.2004] R&D Projects: GA ČR GA202/03/0786 Institutional research plan: CEZ:AV0Z2043910 Keywords : Tokamak * electron temperature * ion temperature * plasma diagnostics Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.226, year: 2004

  5. Ion emission from laser-produced plasmas with two electron temperatures

    International Nuclear Information System (INIS)

    Wickens, L.M.; Allen, J.E.; Rumsby, P.T.

    1978-01-01

    An analytic theory for the expansion of a laser-produced plasma with two electron temperatures is presented. It is shown that from the ion-emission velocity spectrum such relevant parameters as the hot- to -cold-electron density ratio, the absolute hot- and cold-electron temperatures, and a sensitive measure of hot- and cold-electron temperature ratio can be deduced. A comparison with experimental results is presented

  6. Microstructure and antibacterial properties of microwave plasma nitrided layers on biomedical stainless steels

    International Nuclear Information System (INIS)

    Lin, Li-Hsiang; Chen, Shih-Chung; Wu, Ching-Zong; Hung, Jing-Ming; Ou, Keng-Liang

    2011-01-01

    Nitriding of AISI 303 austenitic stainless steel using microwave plasma system at various temperatures was conducted in the present study. The nitrided layers were characterized via scanning electron microscopy, glancing angle X-ray diffraction, transmission electron microscopy and Vickers microhardness tester. The antibacterial properties of this nitrided layer were evaluated. During nitriding treatment between 350 deg. C and 550 deg. C, the phase transformation sequence on the nitrided layers of the alloys was found to be γ → (γ + γ N ) → (γ + α + CrN). The analytical results revealed that the surface hardness of AISI 303 stainless steel could be enhanced with the formation of γ N phase in nitriding process. Antibacterial test also demonstrated the nitrided layer processed the excellent antibacterial properties. The enhanced surface hardness and antibacterial properties make the nitrided AISI 303 austenitic stainless steel to be one of the essential materials in the biomedical applications.

  7. Optimalization study for ion-temperature measurements by means of Rutherford scattering

    International Nuclear Information System (INIS)

    Donne, A.J.H.; Barbian, E.P.

    1986-03-01

    Small-angle Rutherford scattering of energetic neutrals by plasma ions is governed by energy and momentum conservation. The FWHM of the scattering distibution reveals the ion temperature of the plasma. A feasibility study is performed to optimize the parameters in case Rutherford-scattering technique is applied to a medium-sized tokamak experiment. Together with a time-of-flight analyser with a high energy resolution of about 100, a 20 keV helium probing beam with a neutral current density of 10 A/m 2 can provide a detailed spectrum within 3 ms, from which the ion temperature can be extracted with an accuracy of better than 10%. The influence of plasma impurities and resonant charge exchange on the scattering process is discussed in detail. The good spatial resolution makes the method very suitable to investigate energy deposition profiles in the case of ion-cyclotron radiation applied to the plasma for the purpose of plasma heating. (orig.)

  8. Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

    International Nuclear Information System (INIS)

    Gerbi, Jennifer E.; Abelson, John R.

    2007-01-01

    We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

  9. Physicochemical, spectroscopic and electrochemical characterization of magnesium ion-conducting, room temperature, ternary molten electrolytes

    Science.gov (United States)

    Narayanan, N. S. Venkata; Ashok Raj, B. V.; Sampath, S.

    Room temperature, magnesium ion-conducting molten electrolytes are prepared using a combination of acetamide, urea and magnesium triflate or magnesium perchlorate. The molten liquids show high ionic conductivity, of the order of mS cm -1 at 298 K. Vibrational spectroscopic studies based on triflate/perchlorate bands reveal that the free ion concentration is higher than that of ion-pairs and aggregates in the melt. Electrochemical reversibility of magnesium deposition and dissolution is demonstrated using cyclic voltammetry and impedance studies. The transport number of Mg 2+ ion determined by means of a combination of d.c. and a.c. techniques is ∼0.40. Preliminary studies on the battery characteristics reveal good capacity for the magnesium rechargeable cell and open up the possibility of using this unique class of acetamide-based room temperature molten electrolytes in secondary magnesium batteries.

  10. Temperature dependent surface modification of molybdenum due to low energy He+ ion irradiation

    International Nuclear Information System (INIS)

    Tripathi, J.K.; Novakowski, T.J.; Joseph, G.; Linke, J.; Hassanein, A.

    2015-01-01

    In this paper, we report on the temperature dependent surface modifications in molybdenum (Mo) samples due to 100 eV He + ion irradiation in extreme conditions as a potential candidate to plasma-facing components in fusion devices alternative to tungsten. The Mo samples were irradiated at normal incidence, using an ion fluence of 2.6 × 10 24 ions m −2 (with a flux of 7.2 × 10 20 ions m −2 s −1 ). Surface modifications have been studied using high-resolution field emission scanning electron-(SEM) and atomic force (AFM) microscopy. At 773 K target temperature homogeneous evolution of molybdenum nanograins on the entire Mo surface were observed. However, at 823 K target temperature appearance of nano-pores and pin-holes nearby the grain boundaries, and Mo fuzz in patches were observed. The fuzz density increases significantly with target temperatures and continued until 973 K. However, at target temperatures beyond 973 K, counterintuitively, a sequential reduction in the fuzz density has been seen till 1073 K temperatures. At 1173 K and above temperatures, only molybdenum nano structures were observed. Our temperature dependent studies confirm a clear temperature widow, 823–1073 K, for Mo fuzz formation. Ex-situ high resolution X-ray photoelectron spectroscopy studies on Mo fuzzy samples show the evidence of MoO 3 3d doublets. This elucidates that almost all the Mo fuzz were oxidized during open air exposure and are thick enough as well. Likewise the microscopy studies, the optical reflectivity measurements also show a sequential reduction in the reflectivity values (i.e., enhancement in the fuzz density) up to 973 K and after then a sequential enhancement in the reflectivity values (i.e., reduction in the fuzz density) with target temperatures. This is in well agreement with microscopy studies where we observed clear temperature window for Mo fuzz growth

  11. Studies of Interactions of Positive Helium Ions with Small Neutrals at Temperatures Below 50K

    Science.gov (United States)

    Schauer, Martin Michael

    1990-01-01

    Interactions of He^+ ions with small neutrals are important because of their fundamental nature and applicability to other areas of research. In the past, very little work has been done on such systems at very low temperatures (T Boehringer and Arnold (1986) and Johnsen, Chen, and Biondi (1980). A new method of detecting the ions in the trap was also developed and implemented. The Fourier Transform Ion Z-resonance (FTIZR) technique took advantage of an induced coherence in the oscillations of the ions in the trap. This method allowed for measurement of faster ion -neutral reactions. This method was demonstrated by studying the non -resonant charge transfer process ^3He ^+{+}^4He{toatop >=ts}^3He{+}^4He^+. These measurements confirmed that the forward reaction is endothermic by about 1.1 meV.

  12. Evaluation of complexing agents and column temperature in ion chromatographic separation of alkali metals, alkaline earth metals and transition metals ion

    International Nuclear Information System (INIS)

    Kelkar, Anoop; Pandey, Ashish; Name, Anil B.; Das, D.K.; Behere, P.G.; Mohd Afzal

    2015-01-01

    The aim of ion chromatography method development is the resolution of all metal ions of interests. Resolution can be improved by changing the selectivity. Selectivity in chromatography can be altered by changes in mobile phase (eg eluent type, eluent strength) or through changes in stationary phase. Temperature has been used in altering the selectivity of particularly in reversed phase liquid chromatography and ion exchange chromatography. Present paper describe the retention behaviour of alkali metals, alkaline earth metals and transition metal ions on a silica based carboxylate function group containing analyte column. Alkali metals, alkaline earth metals and transition metal ions were detected by ion conductivity and UV-VIS detectors respectively

  13. Shear flow effect on ion temperature gradient vortices in plasmas with sheared magnetic field

    DEFF Research Database (Denmark)

    Chakrabarti, N.; Juul Rasmussen, J.

    1999-01-01

    The effect of velocity shear on ion temperature gradient (ITG) driven vortices in a nonuniform plasma in a curved, sheared magnetic field is investigated. In absence of parallel ion dynamics, vortex solutions for the ITG mode are studied analytically. It is shown that under certain conditions...... and ultimately lead to a dominating monopolar form. The effects of magnetic shear indicate it may destroy these structures. (C) 1999 American Institute of Physics....

  14. A diagnostic for time-resolved spatial profiles measurements on the ion temperature on JET

    International Nuclear Information System (INIS)

    Brocken, H.J.B.M.; Ven, H.W van der.

    1980-05-01

    A neutral particle scattering experiment for a continuous measurement of the ion temperature and ion density of the JET plasma in the hydrogen and deuterium phase is proposed. Space- and time-resolved measurements are possible by injection of a mono-energetic particle beam into the plasma and from the analysis of the velocity distribution of the scattered particles. The requirements on the injection system are specified and a suitable analyzer system is described

  15. A Pilot Study of Ion - Molecule Reactions at Temperatures Relevant to the Atmosphere of Titan

    Czech Academy of Sciences Publication Activity Database

    Zymak, Illia; Žabka, Ján; Polášek, Miroslav; Španěl, Patrik; Smith, D.

    2016-01-01

    Roč. 46, č. 4 (2016), s. 533-538 ISSN 0169-6149 R&D Projects: GA ČR(CZ) GA14-19693S Grant - others:COST(XE) TD1308 Institutional support: RVO:61388955 Keywords : titan ionosphere * variable temperature selected ions flow tube * ion-molecule reactions Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.000, year: 2016

  16. Characterization of plasma nitrided layers produced on sintered iron

    Directory of Open Access Journals (Sweden)

    Marcos Alves Fontes

    2014-07-01

    Full Text Available Plasma nitriding is a thermo-physical-chemical treatment process, which promotes surface hardening, caused by interstitial diffusion of atomic nitrogen into metallic alloys. In this work, this process was employed in the surface modification of a sintered ferrous alloy. Scanning electron microscopy (SEM, X-ray diffraction (XRD analyses, and wear and microhardness tests were performed on the samples submitted to ferrox treatment and plasma nitriding carried out under different conditions of time and temperature. The results showed that the nitride layer thickness is higher for all nitrided samples than for ferrox treated samples, and this layer thickness increases with nitriding time and temperature, and temperature is a more significant variable. The XRD analysis showed that the nitrided layer, for all samples, near the surface consists in a mixture of γ′-Fe4N and ɛ-Fe3N phases. Both wear resistance and microhardness increase with nitriding time and temperature, and temperature influences both the characteristics the most.

  17. Effects of electron-ion temperature equilibration on inertial confinement fusion implosions.

    Science.gov (United States)

    Xu, Barry; Hu, S X

    2011-07-01

    The electron-ion temperature relaxation essentially affects both the laser absorption in coronal plasmas and the hot-spot formation in inertial confinement fusion (ICF). It has recently been reexamined for plasma conditions closely relevant to ICF implosions using either classical molecular-dynamics simulations or analytical methods. To explore the electron-ion temperature equilibration effects on ICF implosion performance, we have examined two Coulomb logarithm models by implementing them into our hydrocodes, and we have carried out hydrosimulations for ICF implosions. Compared to the Lee-More model that is currently used in our standard hydrocodes, the two models predict substantial differences in laser absorption, coronal temperatures, and neutron yields for ICF implosions at the OMEGA Laser Facility [Boehly et al. Opt. Commun. 133, 495 (1997)]. Such effects on the triple-picket direct-drive design at the National Ignition Facility (NIF) have also been explored. Based on the validity of the two models, we have proposed a combined model of the electron-ion temperature-relaxation rate for the overall ICF plasma conditions. The hydrosimulations using the combined model for OMEGA implosions have shown ∼6% more laser absorption, ∼6%-15% higher coronal temperatures, and ∼10% more neutron yield, when compared to the Lee-More model prediction. It is also noticed that the gain for the NIF direct-drive design can be varied by ∼10% among the different electron-ion temperature-relaxation models.

  18. Electric sheath and presheath in a collisionless, finite ion temperature plasma

    International Nuclear Information System (INIS)

    Emmert, G.A.; Wieland, R.M.; Mense, A.T.; Davidson, J.N.

    1980-01-01

    The plasma-sheath equation for a collisionless plasma with arbitrary ion temperature in plane geometry is formulated. Outside the sheath, this equation is approximated by the plasma equation, for which an analytic solution for the electrostatic potential is obtained. In addition, the ion distribution function, the wall potential, and the ion energy and particle flux into the sheath are explicitly calculated. The plasma-sheath equation is also solved numerically with no approximation of the Debye length. The numerical results compare well with the analytical results when the Debye length is small

  19. Transition from L mode to high ion temperature mode in CHS heliotron/torsatron plasmas

    International Nuclear Information System (INIS)

    Ida, K.; Osakabe, M.; Tanaka, K.

    2001-01-01

    A high ion temperature mode (high T i mode) is observed for neutral beam heated plasmas in the Compact Helical System (CHS) Heliotron/torsatron. The high T i mode plasma is characterized by a high central ion temperature, T i (0), and is associated with a peaked electron density profile produced by neutral beam fueling with low wall recycling. Transition from L mode to high T i mode has been studied in CHS. The central ion temperature in the high T i mode discharges reaches to 1 keV which is 2.5 times higher than that in the L mode discharges. The ion thermal diffusivity is significantly reduced by a factor of more than 2-3 in the high T i mode plasma. The ion loss cone is observed in neutral particle flux in the energy range of 1-6 keV with a narrow range of pitch angle (90±10 degree) in the high T i mode. However, the degradation of ion energy confinement due to this loss cone is negligible. (author)

  20. Temperature effects on the electrohydrodynamic and electrokinetic behaviour of ion-selective nanochannels

    International Nuclear Information System (INIS)

    Wood, Jeffery A; Benneker, Anne M; Lammertink, Rob G H

    2016-01-01

    A non-isothermal formulation of the Poisson–Nernst–Planck with Navier–Stokes equations is used to study the influence of heating effects in the form of Joule heating and viscous dissipation and imposed temperature gradients on a microchannel/nanochannel system. The system is solved numerically under various cases in order to determine the influence of temperature-related effects on ion-selectivity, flux and fluid flow profiles, as well as coupling between these phenomena. It is demonstrated that for a larger reservoir system, the effects of Joule heating and viscous dissipation only become relevant for higher salt concentrations and electric field strengths than are compatible with ion-selectivity due to Debye layer overlap. More interestingly, it is shown that using different temperature reservoirs can have a strong influence on ion-selectivity, as well as the induced electrohydrodynamic flows. (paper)

  1. Saturation mechanism of decaying ion temperature gradient driven turbulence with kinetic electrons

    International Nuclear Information System (INIS)

    Idomura, Yasuhiro

    2016-01-01

    We present full-f gyrokinetic simulations of the ion temperature gradient driven (ITG) turbulence including kinetic electrons. By comparing decaying ITG turbulence simulations with adiabatic and kinetic electron models, an impact of kinetic electrons on the ITG turbulence is investigated. It is found that significant electron transport occurs even in the ITG turbulence, and both ion and electron temperature profiles are relaxed. In steady states, both cases show upshifts of nonlinear critical ion temperature gradients from linear ones, while their saturation mechanisms are qualitatively different. In the adiabatic electron case, the ITG mode is stabilized by turbulence driven zonal flows. On the other hand, in the kinetic electron case, passing electrons transport shows fine resonant structures at mode rational surfaces, which generate corrugated density profiles. Such corrugated density profiles lead to fine radial electric fields following the neoclassical force balance relation. The resulting E × B shearing rate greatly exceeds the linear growth rate of the ITG mode. (author)

  2. Determination of the core temperature of a Li-ion cell during thermal runaway

    Science.gov (United States)

    Parhizi, M.; Ahmed, M. B.; Jain, A.

    2017-12-01

    Safety and performance of Li-ion cells is severely affected by thermal runaway where exothermic processes within the cell cause uncontrolled temperature rise, eventually leading to catastrophic failure. Most past experimental papers on thermal runaway only report surface temperature measurement, while the core temperature of the cell remains largely unknown. This paper presents an experimentally validated method based on thermal conduction analysis to determine the core temperature of a Li-ion cell during thermal runaway using surface temperature and chemical kinetics data. Experiments conducted on a thermal test cell show that core temperature computed using this method is in good agreement with independent thermocouple-based measurements in a wide range of experimental conditions. The validated method is used to predict core temperature as a function of time for several previously reported thermal runaway tests. In each case, the predicted peak core temperature is found to be several hundreds of degrees Celsius higher than the measured surface temperature. This shows that surface temperature alone is not sufficient for thermally characterizing the cell during thermal runaway. Besides providing key insights into the fundamental nature of thermal runaway, the ability to determine the core temperature shown here may lead to practical tools for characterizing and mitigating thermal runaway.

  3. Ion temperature anisotropy effects on threshold conditions of a shear-modified current driven electrostatic ion-acoustic instability in the topside auroral ionosphere

    Directory of Open Access Journals (Sweden)

    P. J. G. Perron

    2013-03-01

    Full Text Available Temperature anisotropies may be encountered in space plasmas when there is a preferred direction, for instance, a strong magnetic or electric field. In this paper, we study how ion temperature anisotropy can affect the threshold conditions of a shear-modified current driven electrostatic ion-acoustic (CDEIA instability. In particular, this communication focuses on instabilities in the context of topside auroral F-region situations and in the limit where finite Larmor radius corrections are small. We derived a new fluid-like expression for the critical drift which depends explicitly on ion anisotropy. More importantly, for ion to electron temperature ratios typical of F-region, solutions of the kinetic dispersion relation show that ion temperature anisotropy may significantly lower the drift threshold required for instability. In some cases, a perpendicular to parallel ion temperature ratio of 2 and may reduce the relative drift required for the onset of instability by a factor of approximately 30, assuming the ion-acoustic speed of the medium remains constant. Therefore, the ion temperature anisotropy should be considered in future studies of ion-acoustic waves and instabilities in the high-latitude ionospheric F-region.

  4. Studies of the trapped particle and ion temperature gradient instabilities in the Columbia Linear Machine

    International Nuclear Information System (INIS)

    Mathey, O.H.

    1989-01-01

    In the first part of the work, the effects of weak Coulomb and neutral collisions on the collisionless curvature driven trapped particle mode are studied in the Columbia Linear Machine (CLM) [Phys. Rev. Lett. 57, 1729, (1986)]. Low Coulomb collisionality yields a small stabilizing correction to the magnetohydrodynamic (MHD) collisionless mode, which scales as v, using the Krook model, and ν ec 1/2 using a Lorentz pitch angle operator. In higher collisionality regimes, both models tend to yield similar scalings. In view of relative high neutral collisionality in CLM, both types of collisionality are then combined, modeling neutral collisions with the conserving Krook and Coulomb collisions with a Lorentz model. The dispersion relation is then integrated over velocity space. This combination yields results in very good accord with the available experimental data. The Ion Temperature Gradient Instability is then investigated. It is shown that anisotropy in gradient has a substantial effect on the ion temperature gradient driven mode. A gradient in the parallel temperature is needed for an instability to occur, and a gradient in the perpendicular temperature gradient further enhances the instability indirectly as long as the frequency of the mode is near ion resonance. The physical reason for this important role difference is presented. The Columbia Linear Machine is being redesigned to produce and identify the ion temperature gradient driven η i mode. Using the expected parameters, the author has developed detailed predictions of the mode characteristics in the CLM. Strong multi mode instabilities are expected. As the ion parallel and perpendicular ion temperature gradients are expected to differ significantly, we differentiate between η i parallel and ν i perpendicular and explore the physical differences between them, which leads to a scheme for stabilization of the mode

  5. RF plasma nitriding of severely deformed iron-based alloys

    International Nuclear Information System (INIS)

    Ferkel, H.; Glatzer, M.; Estrin, Y.; Valiev, R.Z.; Blawert, C.; Mordike, B.L.

    2003-01-01

    The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10 -5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of ε and γ' nitrides in the compound layer, with a preferential formation of γ' at the expense of the α-phase at the higher nitriding temperature. The corresponding surface hardness was up to 950 HV0.01. While the HPT-processed St2K50 exhibits both nitride phases after nitriding at 350 deg. C, only the γ'-phase was observed after nitriding at 400 deg. C. A surface hardness of up to 1050 HV0.01 was measured for this steel. The high alloyed steel X5CrNi1810 exhibited the highest increase in surface hardness when HPT was combined with nitriding at 350 deg. C. The surface hardness of this steel was greater than 1400 HV0.025. The XRD analyses indicate the formation of the expanded austenite (S-phase) in the surface layer as a result of RF plasma nitriding. Furthermore, after HPT X5CrNi1810 was transformed completely into deformation martensite which did not transform back to austenite under thermochemical treatment. However, in the case of nitriding of the HPT-processed high alloyed steel at 400 deg. C, the formation of the S-phase was less pronounced. In view of the observed XRD peak broadening, the formation of nitrides, such as e.g. CrN, cannot be ruled out

  6. Co3O4 nanocrystals with exposed low-surface-energy planes anchored on chemically integrated graphitic carbon nitride-modified nitrogen-doped graphene: A high-performance anode material for lithium-ion batteries

    Science.gov (United States)

    Zhang, Wenyao; Fu, Yongsheng; Wang, Xin

    2018-05-01

    A facile strategy to synthesize a composite composed of cubic Co3O4 nanocrystals anchored on chemically integrated g-C3N4-modified N-graphene (CN-NG) as an advanced anode material for high-performance lithium-ion batteries is reported. It is found that the morphology of the Co3O4 nanocrystals contains blunt-edge nanocubes with well-demarcated boundaries and numerous exposed low-index (1 1 1) crystallographic facets. These planes can be directly involved in the electrochemical reactions, providing rapid Li-ion transport channels for charging and discharging and thus enhancing the round-trip diffusion efficiency. On the other hand, the CN-NG support displays unusual textural features, such as superior structural stability, accessible active sites, and good electrical conductivity. The experimental results reveal that the chemical and electronic coupling of graphitic carbon nitride and nitrogen-doped graphene synergistically facilitate the anchoring of Co3O4 nanocrystals and prevents their migration. The resulting Co3O4/CN-NG composite exhibits a high specific reversible capacity of up to 1096 mAh g-1 with excellent cycling stability and rate capability. We believe that such a hybrid carbon support could open a new path for applications in electrocatalysis, sensors, supercapacitors, etc., in the near future.

  7. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  8. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Bakoglidis, Konstantinos D.; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

    2015-01-01

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN x ) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN x films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N 2 /Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V s , was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V s  ≥ 60 V, V s  ≥ 100 V, and V s  = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V s for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V s , while CN x films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant

  9. An assessment of ion temperature measurements in the boundary of the Alcator C-Mod tokamak and implications for ion fluid heat flux limiters

    International Nuclear Information System (INIS)

    Brunner, D; LaBombard, B; Churchill, R M; Hughes, J; Lipschultz, B; Ochoukov, R; Theiler, C; Walk, J; Rognlien, T D; Umansky, M V; Whyte, D

    2013-01-01

    The ion temperature is not frequently measured in the boundary of magnetic fusion devices. Comparisons among different ion temperature techniques and simulations are even rarer. Here we present a comparison of ion temperature measurements in the boundary of the Alcator C-Mod tokamak from three different diagnostics: charge exchange recombination spectroscopy (CXRS), an ion sensitive probe (ISP), and a retarding field analyzer (RFA). Comparison between CXRS and the ISP along with close examination of the ISP measurements reveals that the ISP is space charge limited. It is thus unable to measure ion temperature in the high density (>10 19 m −3 ) boundary plasma of C-Mod with its present geometry. Comparison of ion temperatures measured by CXRS and the RFA shows fair agreement. Ion and electron parallel heat flow is analyzed with a simple 1D fluid code. The code takes divertor measurements as input and results are compared to the measured ratios of upstream ion to electron temperature, as inferred respectively by CXRS and a Langmuir probe. The analysis reveals the limits of the fluid model at high Knudsen number. The upstream temperature ratio is under predicted by a factor of 2. Heat flux limiters (kinetic corrections) to the fluid model are necessary to match experimental data. The values required are found to be close to those reported in kinetic simulations. The 1D code is benchmarked against the 2D plasma fluid code UEDGE with good agreement. (paper)

  10. An assessment of ion temperature measurements in the boundary of the Alcator C-Mod tokamak and implications for ion fluid heat flux limiters

    Science.gov (United States)

    Brunner, D.; LaBombard, B.; Churchill, R. M.; Hughes, J.; Lipschultz, B.; Ochoukov, R.; Rognlien, T. D.; Theiler, C.; Walk, J.; Umansky, M. V.; Whyte, D.

    2013-09-01

    The ion temperature is not frequently measured in the boundary of magnetic fusion devices. Comparisons among different ion temperature techniques and simulations are even rarer. Here we present a comparison of ion temperature measurements in the boundary of the Alcator C-Mod tokamak from three different diagnostics: charge exchange recombination spectroscopy (CXRS), an ion sensitive probe (ISP), and a retarding field analyzer (RFA). Comparison between CXRS and the ISP along with close examination of the ISP measurements reveals that the ISP is space charge limited. It is thus unable to measure ion temperature in the high density (>1019 m-3) boundary plasma of C-Mod with its present geometry. Comparison of ion temperatures measured by CXRS and the RFA shows fair agreement. Ion and electron parallel heat flow is analyzed with a simple 1D fluid code. The code takes divertor measurements as input and results are compared to the measured ratios of upstream ion to electron temperature, as inferred respectively by CXRS and a Langmuir probe. The analysis reveals the limits of the fluid model at high Knudsen number. The upstream temperature ratio is under predicted by a factor of 2. Heat flux limiters (kinetic corrections) to the fluid model are necessary to match experimental data. The values required are found to be close to those reported in kinetic simulations. The 1D code is benchmarked against the 2D plasma fluid code UEDGE with good agreement.

  11. Effects of ion temperature fluctuations on the stability of resistive ballooning modes

    International Nuclear Information System (INIS)

    Singh, R.; Nordman, H.; Jarmen, A.; Weiland, J.

    1996-01-01

    The influence of ion temperature fluctuations on the stability of resistive drift- and ballooning-modes is investigated using a two-fluid model. The Eigenmode equations are derived and solved analytically in a low beta model equilibrium. Parameters relevant to L-mode edge plasmas from the Texas Experimental Tokamak are used. The resistive modes are found to be destabilized by ion temperature fluctuations over a broad range of mode numbers. The scaling of the growth rate with magnetic shear and mode number is elucidated. 13 refs, 4 figs

  12. Ion temperature increase during MHD events on the TST-2 spherical tokamak

    International Nuclear Information System (INIS)

    Ejiri, A.; Shiraiwa, S.; Takase, Y.; Yamada, T.; Nagashima, Y.; Kasahara, H.; Iijima, D.; Kobori, Y.; Nishi, T.; Taniguchi, T.; Aramasu, M.; Ohara, S.; Ushigome, M.; Yamagishi, K.

    2003-01-01

    Various types of MHD events including internal reconnection events are studied on the TST-2 spherical tokamak. In weak MHD events no positive current spike was observed, but in strong MHD events with positive current spikes, a rapid and significant impurity ion temperature increase was observed. The decrease in the poloidal magnetic energy is the most probable energy source for ion heating. The plasma current shows a stepwise change. The magnitude of this step correlates with the temperature increase and is found to be a good indicator of the strength of each event. (author)

  13. Production of nanodiamonds by high-energy ion irradiation of graphite at room temperature

    International Nuclear Information System (INIS)

    Daulton, T.L.; Kirk, M.A.; Lewis, R.S.; Rehn, L.E.

    2001-01-01

    It has previously been shown that graphite can be transformed into diamond by MeV electron and ion irradiation at temperatures above approximately 600 deg. C. However, there exists geological evidence suggesting that carbonaceous materials can be transformed to diamond by irradiation at substantially lower temperatures. For example, submicron-size diamond aggregates have been found in uranium-rich, Precambrian carbonaceous deposits that never experienced high temperature or pressure. To test if diamonds can be formed at lower irradiation temperatures, sheets of fine-grain polycrystalline graphite were bombarded at 20 deg. C with 350±50 MeV Kr ions to fluences of 6x10 12 cm -2 using the Argonne tandem linear accelerator system (ATLAS). Ion-irradiated (and unirradiated control) graphite specimens were then subjected to acid dissolution treatments to remove untransformed graphite and isolate diamonds that were produced; these acid residues were subsequently characterized by high-resolution and analytical electron microscopy. The acid residue of the ion-irradiated graphite was found to contain nanodiamonds, demonstrating that ion irradiation of graphite at ambient temperature can produce diamond. The diamond yield under our irradiation conditions is low, ∼0.01 diamonds/ion. An important observation that emerges from comparing the present result with previous observations of diamond formation during irradiation is that nanodiamonds form under a surprisingly wide range of irradiation conditions. This propensity may be related to the very small difference in the graphite and diamond free-energies coupled with surface-energy considerations that may alter the relative stability of diamond and graphite at nanometer sizes

  14. Kinetic parameters of nitridation of molybdenum and niobium alloys with various structure states

    International Nuclear Information System (INIS)

    Solodkin, G.A.; Bulgach, A.A.; Likhacheva, T.E.

    1985-01-01

    Effect of preliminary plastic strain under rolling on kinetic parameters of nitridation of VN-2AEh, VN-3 niobium alloys and molybdenum alloy with hafnium is investigated. Extreme character of dependence of kinetic parameters of nitridation on the degree of reduction under rolling is determined. Preliminary plastic strain at negligible reduction is shown to accelerate growth of the zone of internal nitridation and decelerates growth of the nitride zone. Nitrogen atom removal from the surface to the centre is retarded at the increase of the degree of reduction up to 50% and higher. The degree of deformations is the higher the lower nitridation temperature is

  15. Coupling analysis of the target temperature and thermal stress due to pulsed ion beam

    International Nuclear Information System (INIS)

    Yan Jie; Liu Meng; Lin Jufang; An Li; Long Xinggui

    2013-01-01

    Background: Target temperature has an important effect on the target life for the sealed neutron generator without cooling system. Purpose: To carry out the thermal-mechanical coupling analysis of the film-substrate target bombarded by the pulsed ion beam. Methods: The indirect coupling Finite Element Method (FEM) with a 2-dimensional time-space Gaussian axisymmetric power density as heat source was used to simulate the target temperature and thermal stress fields. Results: The effects of the target temperature and thermal stress fields under difference pulse widths and beam sizes were analyzed in terms of the FEM results. Conclusions: Combining with the temperature requirement and the thermal stress inducing film thermal mechanical destruction effect of the sealed neutron generator film-substrate targets, an optimized pulsed ion beam work status was proposed. (authors)

  16. High-rate capability of lithium-ion batteries after storing at elevated temperature

    International Nuclear Information System (INIS)

    Wu, Mao-Sung; Chiang, Pin-Chi Julia

    2007-01-01

    High-rate performances of a lithium-ion battery after storage at elevated temperature are investigated electrochemically by means of three-electrode system. The high-rate capability is decreased significantly after high-temperature storage. A 3 C discharge capacities after room-temperature storage and 60 o C storage are 650 and 20 mAh, respectively. Lithium-ion diffusion in lithium cobalt oxide cathode limits the battery's capacity and the results show that storage temperature changes this diffusion behavior. Transmission electron microscopy (TEM) images show that many defects are directly observed in the cathode after storage compared with the fresh cathode; the structural defects block the diffusion within the particles. Electrochemical impedance and polarization curve indicate that mass-transfer (diffusion) dominates the discharge capacity during high-rate discharge

  17. Low-temperature technique of thin silicon ion implanted epitaxial detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kordyasz, A.J.; Bednarek, A. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); Le Neindre, N.; Bougault, R.; Lopez, O.; Merrer, Y.; Vient, E. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); Parlog, M. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); ' ' Horia Hulubei' ' National Institute of Physics and Nuclear Engineering (IFIN-HH), Bucharest Magurele (Romania); Casini, G.; Poggi, G.; Bini, M.; Valdre, S.; Scarlini, E.; Pasquali, G.; Pastore, G.; Piantelli, S.; Stefanini, A.; Olmi, A.; Barlini, S. [INFN Firenze, Sesto Fiorentino (Italy); Universita di Firenze, Sesto Fiorentino (Firenze) (Italy); Kowalczyk, M. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Frankland, J.D.; Bonnet, E.; Chbihi, A.; Gruyer, D. [CEA et IN2P3-CNRS, GANIL, Caen-Cedex 05 (France); Borderie, B.; Ademard, G.; Edelbruck, P.; Rivet, M.F.; Salomon, F. [IN2P3-CNRS, Institut de Physique Nucleaire, Orsay-Cedex (France); Boiano, A.; Rosato, E.; Meoli, A.; Ordine, A.; Spadaccini, G.; Tortone, G.; Vigilante, M.; Vanzanella, E. [Universita di Napoli ' ' Federico II' ' , Dipartimento di Scienze Fisiche, Napoli (Italy); INFN, Napoli (Italy); Bruno, M.; Serra, S.; Morelli, L.; Guerzoni, M. [INFN, Bologna (Italy); Universita di Bologna, Bologna (Italy); Alba, R.; Santonocito, D.; Maiolino, C. [INFN, Catania (Italy); Universita di Catania, LNS, Catania (Italy); Cinausero, M.; Gramegna, F.; Marchi, T. [INFN LNL Legnaro, Legnaro (Padova) (Italy); Kozik, T.; Kulig, P.; Twarog, T.; Sosin, Z. [Jagiellonian University, Cracow (Poland); Gasior, K.; Grzeszczuk, A.; Zipper, W. [University of Silesia, Silesian University, Katowice (Poland); Sarnecki, J.; Lipinski, D.; Wodzinska, H.; Brzozowski, A.; Teodorczyk, M.; Gajewski, M.; Zagojski, A.; Krzyzak, K. [Institute of Electronic Materials Technology, Warsaw (Poland); Tarasiuk, K.J. [University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Khabanowa, Z. [Faculty of Physics, Warsaw University of Technology, Warsaw (Poland); Kordyasz, L. [Warsaw University of Technology, Faculty of Mechatronics, Institute of Mikromechanics and Photonics, Department of Design of Precision Devices, Warsaw (Poland)

    2015-02-01

    A new technique of large-area thin ion implanted silicon detectors has been developed within the R and D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B{sup +} ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from {sup 241}Am (left angle E{sub α} right angle = 5.5 MeV). Preliminary tests on the first thin detector (area ∼ 20 x 20 mm{sup 2}) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction {sup 84}Kr (E = 35 A MeV) + {sup 112}Sn. The ΔE - E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge. (orig.)

  18. Molecular dynamics studies of actinide nitrides

    International Nuclear Information System (INIS)

    Kurosaki, Ken; Uno, Masayoshi; Yamanaka, Shinsuke; Minato, Kazuo

    2004-01-01

    The molecular dynamics (MD) calculation was performed for actinide nitrides (UN, NpN, and PuN) in the temperature range from 300 to 2800 K to evaluate the physical properties viz., the lattice parameter, thermal expansion coefficient, compressibility, and heat capacity. The Morse-type potential function added to the Busing-Ida type potential was employed for the ionic interactions. The interatomic potential parameters were determined by fitting to the experimental data of the lattice parameter. The usefulness and applicability of the MD method to evaluate the physical properties of actinide nitrides were studied. (author)

  19. Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

    Energy Technology Data Exchange (ETDEWEB)

    Kostka, Petr, E-mail: petr.kostka@irsm.cas.cz [Institute of Rock Structure and Mechanics AS CR, V Holešovičkách 41, 182 09 Praha 8 (Czech Republic); Zavadil, Jiří [Institute of Photonics and Electronics AS CR, Chaberská 57, 182 51 Praha 8, Kobylisy (Czech Republic); Iovu, Mihail S. [Institute of Applied Physics, Academy of Sciences of Moldova, Str. Academiei 5, MD-28 Chisinau, Republic of Moldova (Moldova, Republic of); Ivanova, Zoya G. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Furniss, David; Seddon, Angela B. [Mid-Infrared Photonics Group, George Green Institute for Electromagnetics Research, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)

    2015-11-05

    Sulfide and oxysulfide bulk glasses Ga-La-S-O, Ge-Ga-S and Ge-Ga-As-S doped, or co-doped, with various rare-earth (RE{sup 3+}) ions are investigated for their room temperature transmission and low-temperature photoluminescence. Photoluminescence spectra are collected by using external excitation into the Urbach tail of the fundamental absorption edge of the host-glass. The low-temperature photoluminescence spectra are dominated by the broad-band luminescence of the host glass, with superimposed relatively sharp emission bands due to radiative transitions within 4f shells of RE{sup 3+} ions. In addition, the dips in the host-glass luminescence due to 4f-4f up-transitions of RE{sup 3+} ions are observed in the Ge-Ga-S and Ge-Ga-As-S systems. These superimposed narrow effects provide a direct experimental evidence of energy transfer between the host glass and respective RE{sup 3+} dopants. - Highlights: • An evidence of energy transfer from host-glass to doped-in RE ions is presented. • Energy transfer is manifested by dips in host-glass broad-band luminescence. • This channel of energy transfer is documented on selected RE doped sulfide glasses. • Photoluminescence spectra are dominated by broad band host-glass luminescence. • Presence of RE ions is manifested by superimposed narrow 4f-4f transitions.

  20. Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

    Energy Technology Data Exchange (ETDEWEB)

    Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

    2017-05-12

    The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

  1. The effect of temperature on guiding of slow highly charged ions through a mesoscopic glass capillary

    International Nuclear Information System (INIS)

    Bereczky, R J; Tökési, K; Kowarik, G; Ladinig, F; Schrempf, D; Aumayr, F

    2012-01-01

    We present first temperature dependent transmission measurements of slow highly charged ions through a single, straight Duran glass capillary with a high aspect ratio. By changing the temperature of the glass capillary the electrical conductivity of the Duran can be varied by several orders of magnitude. This held the promise to investigate the effect of conductivity on particle transport (build-up and removal of charge patches) through capillaries in more details.

  2. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zajtsev, A.M.

    1985-01-01

    Three optically active defects are detected in mono- and polycrystal cubic boron nitride (β-BN). Analysis of intensity of temperature dependences, halfwidth and energy shift of 1.76 eV narrow phononless line (center GC-1) makes it possible to interprete the observed cathodoluminescence spectra an optical analog of the Moessbaner effect. Comparison of the obtained results with the known data for diamond monocrystals makes it possible to suggest that the detected center GC-1 is a nitrogen vacancy . The conclusion, concerning the Moessbauer optical spectra application, is made to analyze structural perfection of β-BN crystal lattice

  3. Measurement of Individual H+ and O+ Ion Temperatures in the Topside Ionosphere

    Science.gov (United States)

    Hsu, Chih-Te; Heelis, Roderick A.

    2018-02-01

    Plasma temperatures in the ionosphere are associated with both the dynamics and spatial distribution of the neutral and charge particles. During the daytime, temperatures are determined by solar energy inputs and energy exchange between charged and neutral particles. Plasma transport parallel to the magnetic field adds another influence on temperatures through adiabatic processes that are most evident during the nighttime. Previous observations suggest that the topside H+ temperature (TH+) should reside between the O+ temperature (TO+) and the electron temperature (Te), and further calculations confirm the preferential heat transfer from the electrons to H+ in the topside. In this work we implement a more sophisticated analysis procedure to extract individual mass-dependent ion temperatures from the retarding potential analyzer measurements on the DMSP F15 satellite. The results show that the daytime TH+ is a few hundred degrees higher than TO+ at all longitudes. The nighttime temperature difference between TH+ and TO+ is indicative of mass-dependent adiabatic heating and cooling processes across the equatorial region. The ion temperatures and measured plasma flows present clear longitudinal variations that are associated with magnetic declination.

  4. Damage accumulation in MgO irradiated with MeV Au ions at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Bachiller-Perea, Diana, E-mail: dianabachillerperea@gmail.com [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, 28049, Madrid (Spain); Dpto. de Física Aplicada, Universidad Autónoma de Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Debelle, Aurélien, E-mail: aurelien.debelle@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Thomé, Lionel [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Behar, Moni [Instituto de Física, Universidade Federal do Rio Grande do Sul, C.P. 15051, 91501-970, Porto Alegre, RS (Brazil)

    2016-09-15

    The damage accumulation process in MgO single crystals under medium-energy heavy ion irradiation (1.2 MeV Au) at fluences up to 4 × 10{sup 14} cm{sup −2} has been studied at three different temperatures: 573, 773, and 1073 K. Disorder depth profiles have been determined through the use of the Rutherford backscattering spectrometry in channeling configuration (RBS/C). The analysis of the RBS/C data reveals two steps in the MgO damage process, irrespective of the temperature. However, we find that for increasing irradiation temperature, the damage level decreases and the fluence at which the second step takes place increases. A shift of the damage peak at increasing fluence is observed for the three temperatures, although the position of the peak depends on the temperature. These results can be explained by an enhanced defect mobility which facilitates defect migration and may favor defect annealing. X-ray diffraction reciprocal space maps confirm the results obtained with the RBS/C technique. - Highlights: • High-temperature MeV-ion irradiated MgO exhibits a two-step damage process. • The occurrence of the second step is delayed with increasing temperature. • The damage level decreases with increasing temperature. • A shift of the damage peak is observed with increasing fluence. • A high defect mobility at high temperatures in MgO is clearly evidenced.

  5. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  6. Comparison of ion temperature and ion density measured during geomagnetically very quiet conditions on board of the geophysical rocket ''Vertical-6'' with the international reference ionosphere

    International Nuclear Information System (INIS)

    Bencze, P.; Kovacs, K.; Apathy, I.; Szemerey, I.; Afonin, V.; Bezrukih, V.; Shutte, N.

    1980-05-01

    Ion temperature and ion density, measured on October 25, 1977 during the flight of the geophyisical rocket ''Vertical-6'' by means of a group of five retarding potential analyzers looking into different directions of space, are compared with the International Reference Ionosphere 1978. The measurements were carried out in a geomagnetically quiet period to a height of 1500 km. The results show that both the ion temperature and the ion density are lower than the values predicted by the Reference Ionosphere, the difference is decreasing with increasing altitude. (author)

  7. Positive ion mobilities in normal liquid 3He at ultralow temperatures

    International Nuclear Information System (INIS)

    Alexander, P.W.

    1978-11-01

    The mobility has been measured of positive ions in liquid 3 he in the range 2.5 mK 3 sub(m)/sup(V) 5 sub(m)/sup(V). The effects of 500 p.p.m. 4 He in the 3 He were investigated. It was found that, at low temperatures, several stable ion species could be produced for 3 He pressures of 23 bar and above and, between 25 mK and 60 mK, time dependent conversion from one species of ion to another was observed at all pressures. The creation mechanism, mobility and stability of multiple positive ions were studied. Possible explanations of the phenomena are discussed. The measured drift field dependence of mobility is used to test the quasiparticle scattering model assumed for the liquid. (U.K.)

  8. Low-velocity ion stopping in a dense and low-temperature plasma target

    Science.gov (United States)

    Deutsch, Claude; Popoff, Romain

    2007-07-01

    We investigate the stopping specificities involved in the heating of thin foils irradiated by intense ion beams in the 0.3-3 MeV/amu energy range and in close vicinity of the Bragg peak. Considering a swiftly ionized target to eV temperatures before expansion while retaining solid-state density, a typical warm dense matter (WDM) situation thus arises. We stress low Vp stopping through ion diffusion in the given target plasma. This allows to include the case of a strongly magnetized target in a guiding center approximation. We also demonstrate that the ion projectile penetration depth in target is significantly affected by multiple scattering on target electrons. The given plasma target is taken weakly coupled with Maxwell electron either with no magnetic field ( B=0) or strongly magnetized ( B≠0). Dynamical coupling between ion projectiles energy losses and projectiles charge state will also be addressed.

  9. A reduced model for ion temperature gradient turbulent transport in helical plasmas

    International Nuclear Information System (INIS)

    Nunami, M.; Watanabe, T.-H.; Sugama, H.

    2013-07-01

    A novel reduced model for ion temperature gradient (ITG) turbulent transport in helical plasmas is presented. The model enables one to predict nonlinear gyrokinetic simulation results from linear gyrokinetic analyses. It is shown from nonlinear gyrokinetic simulations of the ITG turbulence in helical plasmas that the transport coefficient can be expressed as a function of the turbulent fluctuation level and the averaged zonal flow amplitude. Then, the reduced model for the turbulent ion heat diffusivity is derived by representing the nonlinear turbulent fluctuations and zonal flow amplitude in terms of the linear growth rate of the ITG instability and the linear response of the zonal flow potentials. It is confirmed that the reduced transport model results are in good agreement with those from nonlinear gyrokinetic simulations for high ion temperature plasmas in the Large Helical Device. (author)

  10. Plasma rotation and ion temperature measurements by collective Thomson scattering at ASDEX Upgrade

    DEFF Research Database (Denmark)

    Stejner Pedersen, Morten; Nielsen, Stefan Kragh; Jacobsen, Asger Schou

    2015-01-01

    We present the first deuterium ion temperature and rotation measurements by collective Thomson scattering at ASDEX Upgrade. The results are in general agreement with boron-based charge exchange recombination spectroscopy measurements and consistent with neoclassical simulations for the plasma sce...... scenario studied here. This demonstration opens the prospect for direct non-perturbative measurements of the properties of the main ion species in the plasma core with applications in plasma transport and confinement studies.......We present the first deuterium ion temperature and rotation measurements by collective Thomson scattering at ASDEX Upgrade. The results are in general agreement with boron-based charge exchange recombination spectroscopy measurements and consistent with neoclassical simulations for the plasma...

  11. Characterization of low temperature metallic magnetic calorimeters having gold absorbers with implanted 163Ho ions

    Science.gov (United States)

    Gastaldo, L.; Ranitzsch, P. C.-O.; von Seggern, F.; Porst, J.-P.; Schäfer, S.; Pies, C.; Kempf, S.; Wolf, T.; Fleischmann, A.; Enss, C.; Herlert, A.; Johnston, K.

    2013-05-01

    For the first time we have investigated the behavior of fully micro-fabricated low temperature metallic magnetic calorimeters (MMCs) after undergoing an ion-implantation process. This experiment had the aim to show the possibility to perform a high precision calorimetric measurement of the energy spectrum following the electron capture of 163Ho using MMCs having the radioactive 163Ho ions implanted in the absorber. The isotope 163Ho decays through electron capture to 163Dy and features the smallest known QEC value. This peculiarity makes 163Ho a very interesting candidate to investigate the value of the electron neutrino mass by the analysis of the energy spectrum. The implantation of 163Ho ions was performed at ISOLDE-CERN. The performance of a detector that underwent an ion-implantation process is compared to the one of a detector without implanted ions. The results show that the implantation dose of ions used in this experiment does not compromise the properties of the detector. Moreover the performance of the detector prototype having the 163Ho ions implanted in the absorber is already close to the requirements needed for an experiment with sub-eV sensitivity to the electron neutrino mass. Based on these results, an optimized detector design for future 163Ho experiments is presented.

  12. Characterization of low temperature metallic magnetic calorimeters having gold absorbers with implanted 163Ho ions

    International Nuclear Information System (INIS)

    Gastaldo, L.; Ranitzsch, P.C.-O.; Seggern, F. von; Porst, J.-P.; Schäfer, S.; Pies, C.; Kempf, S.; Wolf, T.; Fleischmann, A.; Enss, C.; Herlert, A.; Johnston, K.

    2013-01-01

    For the first time we have investigated the behavior of fully micro-fabricated low temperature metallic magnetic calorimeters (MMCs) after undergoing an ion-implantation process. This experiment had the aim to show the possibility to perform a high precision calorimetric measurement of the energy spectrum following the electron capture of 163 Ho using MMCs having the radioactive 163 Ho ions implanted in the absorber. The isotope 163 Ho decays through electron capture to 163 Dy and features the smallest known Q EC value. This peculiarity makes 163 Ho a very interesting candidate to investigate the value of the electron neutrino mass by the analysis of the energy spectrum. The implantation of 163 Ho ions was performed at ISOLDE-CERN. The performance of a detector that underwent an ion-implantation process is compared to the one of a detector without implanted ions. The results show that the implantation dose of ions used in this experiment does not compromise the properties of the detector. Moreover the performance of the detector prototype having the 163 Ho ions implanted in the absorber is already close to the requirements needed for an experiment with sub-eV sensitivity to the electron neutrino mass. Based on these results, an optimized detector design for future 163 Ho experiments is presented

  13. Transition to Collisionless Ion-Temperature-Gradient-Driven Plasma Turbulence: A Dynamical Systems Approach

    International Nuclear Information System (INIS)

    Kolesnikov, R.A.; Krommes, J.A.

    2005-01-01

    The transition to collisionless ion-temperature-gradient-driven plasma turbulence is considered by applying dynamical systems theory to a model with 10 degrees of freedom. The study of a four-dimensional center manifold predicts a 'Dimits shift' of the threshold for turbulence due to the excitation of zonal flows and establishes (for the model) the exact value of that shift

  14. Temperature fields occurring in dielectric capillaries for the transport of of ion beams

    International Nuclear Information System (INIS)

    Urbanovich, A.I.

    2012-01-01

    This paper presents the results of computing the temperature fields occurring in dielectric capillaries of glass for the transport of accelerated charged particles. It is shown that on the transport of ion beams with a power of several watts the capillary is heated intensively, whereas heat stresses may approach the lower bound associated with a real strength of glass. (authors)

  15. Temperature dynamics and velocity scaling laws for interchange driven, warm ion plasma filaments

    DEFF Research Database (Denmark)

    Olsen, Jeppe Miki Busk; Madsen, Jens; Nielsen, Anders Henry

    2016-01-01

    The influence of electron and ion temperature dynamics on the radial convection of isolated structures in magnetically confined plasmas is investigated by means of numerical simulations. It is demonstrated that the maximum radial velocity of these plasma blobs roughly follows the inertial velocity...

  16. Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

    Czech Academy of Sciences Publication Activity Database

    Kostka, Petr; Zavadil, Jiří; Iovu, M.S.; Ivanova, Z. G.; Furniss, D.; Seddon, A.B.

    2015-01-01

    Roč. 648, NOV 5 (2015), s. 237-243 ISSN 0925-8388 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985891 ; RVO:67985882 Keywords : chalcogenide glasses * rare earth ions * low-temperature photoluminescence * optical transmission Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 3.014, year: 2015

  17. Combined effects of water temperature and copper ion concentration on catalase activity in Crassostrea ariakensis

    Science.gov (United States)

    Wang, Hui; Yang, Hongshuai; Liu, Jiahui; Li, Yanhong; Liu, Zhigang

    2015-07-01

    A central composite experimental design and response surface method were used to investigate the combined effects of water temperature (18-34°C) and copper ion concentration (0.1-1.5 mg/L) on the catalase (CAT) activity in the digestive gland of Crassostrea ariakensis. The results showed that the linear effects of temperature were significant ( P0.05), and the quadratic effects of copper ion concentration were significant ( P0.05), and the effect of temperature was greater than that of copper ion concentration. A model equation of CAT enzyme activity in the digestive gland of C. ariakensis toward the two factors of interest was established, with R 2, Adj. R 2 and Pred. R 2 values as high as 0.943 7, 0.887 3 and 0.838 5, respectively. These findings suggested that the goodness of fit to experimental data and predictive capability of the model were satisfactory, and could be practically applied for prediction under the conditions of the study. Overall, the results suggest that the simultaneous variation of temperature and copper ion concentration alters the activity of the antioxidant enzyme CAT by modulating active oxygen species metabolism, which may be utilized as a biomarker to detect the effects of copper pollution.

  18. Ion temperature gradient driven mode in presence of transverse velocity shear in magnetized plasmas

    DEFF Research Database (Denmark)

    Chakrabarti, N.; Juul Rasmussen, J.; Michelsen, Poul

    2005-01-01

    The effect of sheared poloidal flow on the toroidal branch of the ion temperature gradient driven mode of magnetized nonuniform plasma is studied. A novel "nonmodal" calculation is used to analyze the problem. It is shown that the transverse shear flow considerably reduced the growth...

  19. Amorphous boron nanorod as an anode material for lithium-ion batteries at room temperature.

    Science.gov (United States)

    Deng, Changjian; Lau, Miu Lun; Barkholtz, Heather M; Xu, Haiping; Parrish, Riley; Xu, Meiyue Olivia; Xu, Tao; Liu, Yuzi; Wang, Hao; Connell, Justin G; Smith, Kassiopeia A; Xiong, Hui

    2017-08-03

    We report an amorphous boron nanorod anode material for lithium-ion batteries prepared through smelting non-toxic boron oxide in liquid lithium. Boron in theory can provide capacity as high as 3099 mA h g -1 by alloying with Li to form B 4 Li 5 . However, experimental studies of the boron anode have been rarely reported for room temperature lithium-ion batteries. Among the reported studies the electrochemical activity and cycling performance of the bulk crystalline boron anode material are poor at room temperature. In this work, we utilized an amorphous nanostructured one-dimensional (1D) boron material aiming at improving the electrochemical reactivity between boron and lithium ions at room temperature. The amorphous boron nanorod anode exhibited, at room temperature, a reversible capacity of 170 mA h g -1 at a current rate of 10 mA g -1 between 0.01 and 2 V. The anode also demonstrated good rate capability and cycling stability. The lithium storage mechanism was investigated by both sweep voltammetry measurements and galvanostatic intermittent titration techniques (GITTs). The sweep voltammetric analysis suggested that the contributions from lithium ion diffusion into boron and the capacitive process to the overall lithium charge storage are 57% and 43%, respectively. The results from GITT indicated that the discharge capacity at higher potentials (>∼0.2 V vs. Li/Li + ) could be ascribed to a capacitive process and at lower potentials (ions and the amorphous boron nanorod. This work provides new insights into designing nanostructured boron materials for lithium-ion batteries.

  20. Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

    International Nuclear Information System (INIS)

    Hezel, R.; Streb, W.

    1985-01-01

    Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

  1. Friction and wear behaviour of ion beam modified ceramics

    Science.gov (United States)

    Lankford, J.; Wei, W.; Kossowsky, R.

    1987-01-01

    In the present study, the sliding friction coefficients and wear rates of carbide, oxide, and nitride materials for potential use as sliding seals (ring/liner) were measured under temperature, environmental, velocity, and loading conditions representative of a diesel engine. In addition, silicon nitride and partially stabilized zirconia discs were modified by ion mixing with TiNi, nickel, cobalt and chromium, and subsequently run against carbide pins, with the objective of producing reduced friction via solid lubrication at elevated temperature. Unmodified ceramic sliding couples were characterized at all temperatures by friction coefficients of 0.24 and above. However, the coefficient at 800 C in an oxidizing environment was reduced to below 0.1, for certain material combinations, by the ion implantation of TiNi or cobalt. This beneficial effect was found to derive from lubricious titanium, nickel, and cobalt oxides.

  2. Experimental evaluation of the pressure and temperature dependence of ion-induced nucleation.

    Science.gov (United States)

    Munir, Muhammad Miftahul; Suhendi, Asep; Ogi, Takashi; Iskandar, Ferry; Okuyama, Kikuo

    2010-09-28

    An experimental system for the study of ion-induced nucleation in a SO(2)/H(2)O/N(2) gas mixture was developed, employing a soft x-ray at different pressure and temperature levels. The difficulties associated with these experiments included the changes in physical properties of the gas mixture when temperature and pressure were varied. Changes in the relative humidity (RH) as a function of pressure and temperature also had a significant effect on the different behaviors of the mobility distributions of particles. In order to accomplish reliable measurement and minimize uncertainties, an integrated on-line control system was utilized. As the pressure decreased in a range of 500-980 hPa, the peak concentration of both ions and nanometer-sized particles decreased, which suggests that higher pressure tended to enhance the growth of particles nucleated by ion-induced nucleation. Moreover, the modal diameters of the measured particle size distributions showed a systematic shift to larger sizes with increasing pressure. However, in the temperature range of 5-20 °C, temperature increases had no significant effects on the mobility distribution of particles. The effects of residence time, RH (7%-70%), and SO(2) concentration (0.08-6.7 ppm) on ion-induced nucleation were also systematically investigated. The results show that the nucleation and growth were significantly dependent on the residence time, RH, and SO(2) concentration, which is in agreement with both a previous model and previous observations. This research will be inevitable for a better understanding of the role of ions in an atmospheric nucleation mechanism.

  3. Winter nightime ion temperatures and energetic electrons from 0go 6 plasma measurements

    International Nuclear Information System (INIS)

    Sanatani, S.; Breig, E.L.

    1981-01-01

    This paper presents and discusses ion temperature and suprathermal electron flux data acquired with the retarding potential analyzer on board the ogo 6 satellite when it was in solar eclipse. Attention is directed to measurements in the 400- to 800-km height interval between midnight and predawn in the northern winter nonpolar ionosphere. Statistical analysis of data recorded during a 1-month time span permits a decoupling of horizontal and altitude effects. A distinct longitudinal variation is observed for ion temperature above 500 km, with a significant relative enhancement over the western North Altantic Altitude distributions of ion temperature are compatible with Millstone Hill profiles within the common region of this enhancement. Large fluxes of energetic electrons are observed and extend to mush lower geomagnetic latitudes in the same longitude sector. Both a direct correlation in magnitude and a strong similarity in spatial extent are demonstrated for these ion temperature and electron flux data. The location of the limiting low-altitude boundary for observation of the electron fluxes is variable, dependent on local time and season as well as longitude. Variations in this boundary are found to be consistent with a calculated conjugate solar zenith angle of 99 0 +- 2 0 describing photoproduction of energetic electrons in the southern hemisphere. The ogo 6 data are considered to be indicative of an energy source originating in the sunlit summer hemisphere and providing heat via transport of photoelectrons to a broad but preferential segment of the winter nighttime mid-latitude ionosphere. Ions at other longitudes are without access to this energy source and cool to near the neutral temperature at heights to above 800 km inthe predawn hours

  4. Temperature dependence of ion-beam induced amorphization in α-quartz

    International Nuclear Information System (INIS)

    Dhar, Sankar; Bolse, Wolfgang; Lieb, Klaus-Peter

    1999-01-01

    The temperature dependence of the amorphization in α-quartz by Ne-ion bombardment has been investigated using Rutherford Backscattering Spectrometry in channeling geometry (RBS-C). The experimental results show that the critical temperature T c for inhibiting amorphization in quartz is around 940 K. The damage depth profile χ(z,phi) is independent of the temperature and fluence and can be simulated with a power-law function [χ(z,phi)∝(phiF D (z)) 3 ] of the damage energy distribution F D (z). At low irradiation temperature, the critical dose phi c for amorphization is independent of the temperature but it strongly increases at higher temperatures with an activation energy of 0.28 eV and has been explained by out-diffusion model of Morehead and Crowder

  5. Effective Duration of Gas Nitriding Process on AISI 316L for the Formation of a Desired Thickness of Surface Nitrided Layer

    Directory of Open Access Journals (Sweden)

    Mahmoud Hassan R. S.

    2014-07-01

    Full Text Available High temperature gas nitriding performed on AISI 316L at the temperature of 1200°C. The microstructure of treated AISI 316L samples were observed to identify the formation of the microstructure of nitrided surface layer. The grain size of austenite tends to be enlarged when the nitriding time increases, but the austenite single phase structure is maintained even after the long-time solution nitriding. Using microhardness testing, the hardness values drop to the center of the samples. The increase in surface hardness is due to the high nitrogen concentration at or near the surface. At 245HV, the graph of the effective duration of nitriding process was plotted to achieve the maximum depth of nitrogen diffuse under the surface. Using Sigma Plot software best fit lines of the experimental result found and plotted to find out effective duration of nitriding equation as Y=1.9491(1-0.7947x, where Y is the thickness of nitrided layer below the surface and X is duration of nitriding process. Based on this equation, the duration of gas nitriding process can be estimated to produce desired thickness of nitrided layer.

  6. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

    2014-05-28

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  7. Modeling Temperature Development of Li-Ion Battery Packs in Hybrid Refuse Truck Operating at Different Ambient Conditions

    DEFF Research Database (Denmark)

    Coman, Paul Tiberiu; Veje, Christian

    2014-01-01

    This paper presents a dynamic model for simulating the heat dissipation and the impact of Phase Change Materials (PCMs) on the peak temperature in Lithium-ion batteries during discharging operation of a hybrid truck under different ambient temperatures.......This paper presents a dynamic model for simulating the heat dissipation and the impact of Phase Change Materials (PCMs) on the peak temperature in Lithium-ion batteries during discharging operation of a hybrid truck under different ambient temperatures....

  8. Self-organized profile relaxation by ion temperature gradient instability in toroidal plasmas

    International Nuclear Information System (INIS)

    Kishimoto, Y.; Tajima, T.; LeBrun, M.J.; Gray, M.G.; Kim, J.Y.; Horton, W.

    1993-02-01

    Toroidal effects on the ion-temperature gradient mode are found to dictate the temperature evolution and the subsequent relaxed profile realization according to our toroidal particle simulation. Both in the strongly unstable fluid regime as well as in the near-marginal kinetic regime we observe that the plasma maintains an exponential temperature profile and forces the heat flux to be radially independent. The self-organized critical relaxed state is sustained slightly above the marginal stability, where the weak wave growth balances the wave decorrelation

  9. Room temperature diamond-like carbon coatings produced by low energy ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Markwitz, A., E-mail: a.markwitz@gns.cri.nz [Department for Ion Beam Technologies, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology (New Zealand); Mohr, B.; Leveneur, J. [Department for Ion Beam Technologies, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand)

    2014-07-15

    Nanometre-smooth diamond-like carbon coatings (DLC) were produced at room temperature with ion implantation using 6 kV C{sub 3}H{sub y}{sup +} ion beams. Ion beam analysis measurements showed that the coatings contain no heavy Z impurities at the level of 100 ppm, have a homogeneous stoichiometry in depth and a hydrogen concentration of typically 25 at.%. High resolution TEM analysis showed high quality and atomically flat amorphous coatings on wafer silicon. Combined TEM and RBS analysis gave a coating density of 3.25 g cm{sup −3}. Raman spectroscopy was performed to probe for sp{sup 2}/sp{sup 3} bonds in the coatings. The results indicate that low energy ion implantation with 6 kV produces hydrogenated amorphous carbon coatings with a sp{sup 3} content of about 20%. Results highlight the opportunity of developing room temperature DLC coatings with ion beam technology for industrial applications.

  10. Ion temperature measurements of turbulently heated tokamak plasma by Doppler-broadening of visible lines in TRIAM-1

    Energy Technology Data Exchange (ETDEWEB)

    Hiraki, N; Nakamura, K; Toi, K; Itoh, S [Kyushu Univ., Fukuoka (Japan). Research Inst. for Applied Mechanics

    1981-01-01

    In the turbulent heating experiment of the high-field tokamak TRIAM-1, the bulk ion heating shown by the neutral energy analyzer measurement is confirmed by the Doppler broadening measurement of visible lines. The increasing rate and decay time of the Doppler ion temperature are almost the same as those derived from the neutral energy analyzer measurement. From both methods of ion temperature measurements, it is shown that the ion temperature has a parabolic profile within 50 ..mu..s after the application of the heating pulse.

  11. Measurement of the electron and ion temperatures by the x-ray imaging crystal spectrometer on joint Texas experimental tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Yan, W.; Chen, Z. Y., E-mail: zychen@hust.edu.cn; Huang, D. W.; Tong, R. H.; Wang, S. Y.; Wei, Y. N.; Ma, T. K.; Zhuang, G. [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan (China); Jin, W. [Center of Interface Dynamics for Sustainability, China Academy of Engineering Physics, Chengdu, Sichuan 610200 (China); Lee, S. G. [National Fusion Research Institute, Daejeon 305-333 (Korea, Republic of); Shi, Y. J. [Department of Nuclear Engineering, Seoul National University, Seoul 08826 (Korea, Republic of)

    2016-11-15

    An x-ray imaging crystal spectrometer has been developed on joint Texas experimental tokamak for the measurement of electron and ion temperatures from the K{sub α} spectra of helium-like argon and its satellite lines. A two-dimensional multi-wire proportional counter has been applied to detect the spectra. The electron and ion temperatures have been obtained from the Voigt fitting with the spectra of helium-like argon ions. The profiles of electron and ion temperatures show the dependence on electron density in ohmic plasmas.

  12. Compressive creep of silicon nitride

    International Nuclear Information System (INIS)

    Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

    1990-01-01

    Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

  13. Oblique ion-acoustic cnoidal waves in two temperature superthermal electrons magnetized plasma

    International Nuclear Information System (INIS)

    Panwar, A.; Ryu, C. M.; Bains, A. S.

    2014-01-01

    A study is presented for the oblique propagation of ion acoustic cnoidal waves in a magnetized plasma consisting of cold ions and two temperature superthermal electrons modelled by kappa-type distributions. Using the reductive perturbation method, the nonlinear Korteweg de-Vries equation is derived, which further gives the solutions with a special type of cnoidal elliptical functions. Both compressive and rarefactive structures are found for these cnoidal waves. Nonlinear periodic cnoidal waves are explained in terms of plasma parameters depicting the Sagdeev potential and the phase curves. It is found that the density ratio of hot electrons to ions μ significantly modifies compressive/refractive wave structures. Furthermore, the combined effects of superthermality of cold and hot electrons κ c ,κ h , cold to hot electron temperature ratio σ, angle of propagation and ion cyclotron frequency ω ci have been studied in detail to analyze the height and width of compressive/refractive cnoidal waves. The findings in the present study could have important implications in understanding the physics of electrostatic wave structures in the Saturn's magnetosphere where two temperature superthermal electrons are present

  14. Study on Energetic Ions Behavior in Plasma Facing Materials at Lower Temperature

    International Nuclear Information System (INIS)

    Morimoto, Y.; Sugiyama, T.; Akahori, S.; Kodama, H.; Tega, E.; Sasaki, M.; Oyaidu, M.; Kimura, H.; Okuno, K.

    2003-01-01

    An apparatus equipped with X-ray Photoelectron Spectroscopy (XPS) and Thermal Desorption Spectroscopy (TDS) was constructed to study interactions of energetic hydrogen isotopes with plasma facing materials. It is a remarkable feature of the apparatus that energetic ion implantation is carried out at around 150K to study reactions of energetic ions with matrix by suppressing the reactions of thermalized ions. Using this apparatus, TDS experiments for pyrolytic graphite implanted with energetic D 2 ions at 173 and 373K were carried out. The experimental results suggest that the deuterium implanted was released through a four-step release processes, involving three D 2 and one CD x (x = 2, 3 and 4) desorption processes. Two deuterium and CD x desorption processes were observed in the temperature range from 700 to 1200 K. In addition, a new deuterium desorption process was observed for the deuterium-implanted sample at 173 K. This has never been observed for deuterium-implanted graphite implanted at temperatures higher than room temperature

  15. Ion-beam mixing in silicon and germanium at low temperatures

    International Nuclear Information System (INIS)

    Clark, G.J.; Marwick, A.D.; Poker, D.B.

    1982-01-01

    Ion-beam mixing of thin marker layers in amorphous silicon and germanium was studied using irradiations with Xe ions at temperatures of 34k and 77k. The marker species, ion energies and doses were: in silicon, markers of Ge and Pt irradiated with 200-keV Xe up to 2.7x10 16 ions cm -2 ; and in germanium, markers of Al and Si bombarded with 295-keV Xe up to 1.63x10 16 ions cm -2 . In silicon, Pt markers were found to broaden at about the same rate at 34k and 77k; and the rate of broadening was similar to that found by other workers when expressed as an efficiency of mixing, i.e., when dependence on ion dose and deposited energy was factored out. However, a Ge marker irradiated at 34k did not broaden from its original thickness. In germanium, markers of both Al and Si were mixed by irradiation at 34k, but at 77k only the Al marker broadened; the Si marker did not. The broadening of the markers is ascribed to ballistic mixing, while the cases where no broadening occurred are explicable if diffusion by a defect mechanism transported displaced marker atoms back to traps near their original sites

  16. Alkaline fuel cell with nitride membrane

    Science.gov (United States)

    Sun, Shen-Huei; Pilaski, Moritz; Wartmann, Jens; Letzkus, Florian; Funke, Benedikt; Dura, Georg; Heinzel, Angelika

    2017-06-01

    The aim of this work is to fabricate patterned nitride membranes with Si-MEMS-technology as a platform to build up new membrane-electrode-assemblies (MEA) for alkaline fuel cell applications. Two 6-inch wafer processes based on chemical vapor deposition (CVD) were developed for the fabrication of separated nitride membranes with a nitride thickness up to 1 μm. The mechanical stability of the perforated nitride membrane has been adjusted in both processes either by embedding of subsequent ion implantation step or by optimizing the deposition process parameters. A nearly 100% yield of separated membranes of each deposition process was achieved with layer thickness from 150 nm to 1 μm and micro-channel pattern width of 1μm at a pitch of 3 μm. The process for membrane coating with electrolyte materials could be verified to build up MEA. Uniform membrane coating with channel filling was achieved after the optimization of speed controlled dip-coating method and the selection of dimethylsulfoxide (DMSO) as electrolyte solvent. Finally, silver as conductive material was defined for printing a conductive layer onto the MEA by Ink-Technology. With the established IR-thermography setup, characterizations of MEAs in terms of catalytic conversion were performed successfully. The results of this work show promise for build up a platform on wafer-level for high throughput experiments.

  17. Lowering of the L10 ordering temperature of FePt nanoparticles by He+ ion irradiation

    International Nuclear Information System (INIS)

    Wiedwald, U.; Klimmer, A.; Kern, B.; Han, L.; Boyen, H.-G.; Ziemann, P.; Fauth, K.

    2007-01-01

    Arrays of FePt particles (diameter 7 nm) with mean interparticle distances of 60 nm are prepared by a micellar technique on Si substrates. The phase transition of these magnetic particles towards the chemically ordered L1 0 phase is tracked for 350 kV He + ion irradiated samples and compared to a nonirradiated reference. Due to the large separation of the magnetically decoupled particles the array can be safely annealed without any agglomeration as usually observed for more densely packed colloidal FePt nanoparticles. The He + ion exposure yields a significant reduction of the ordering temperature by more than 100 K

  18. Stabilization of ion temperature gradient driven modes by lower hybrid wave in a tokamak

    International Nuclear Information System (INIS)

    Kuley, Animesh; Tripathi, V. K.

    2009-01-01

    A gyrokinetic formalism has been developed to study lower hybrid wave stabilization of ion temperature gradient driven modes, responsible for anomalous ion transport in the inner region of tokamak. The parametric coupling between lower hybrid and drift waves produce lower hybrid sideband waves. The pump and the sidebands exert a ponderomotive force on electrons, modifying the eigenfrequency of the drift wave and influencing the growth rate. The longer wavelength drift waves are destabilized by the lower hybrid wave while the shorter wavelengths are suppressed. The requiste lower hybrid power is in the range of ∼900 kW at 4.6 GHz.

  19. Comparisons of theoretically predicted transport from ion temperature gradient instabilities to L-mode tokamak experiments

    International Nuclear Information System (INIS)

    Kotschenreuther, M.; Wong, H.V.; Lyster, P.L.; Berk, H.L.; Denton, R.; Miner, W.H.; Valanju, P.

    1991-12-01

    The theoretical transport from kinetic micro-instabilities driven by ion temperature gradients is a sheared slab is compared to experimentally inferred transport in L-mode tokamaks. Low noise gyrokinetic simulation techniques are used to obtain the ion thermal transport coefficient X. This X is much smaller than in experiments, and so cannot explain L-mode confinement. Previous predictions based on fluid models gave much greater X than experiments. Linear and nonlinear comparisons with the fluid model show that it greatly overestimates transport for experimental parameters. In addition, disagreements among previous analytic and simulation calculations of X in the fluid model are reconciled

  20. Evolution of precipitate in nickel-base alloy 718 irradiated with argon ions at elevated temperature

    International Nuclear Information System (INIS)

    Jin, Shuoxue; Luo, Fengfeng; Ma, Shuli; Chen, Jihong; Li, Tiecheng; Tang, Rui; Guo, Liping

    2013-01-01

    Alloy 718 is a nickel-base superalloy whose strength derives from γ′(Ni 3 (Al,Ti)) and γ″(Ni 3 Nb) precipitates. The evolution of the precipitates in alloy 718 irradiated with argon ions at elevated temperature were examined via transmission electron microscopy. Selected-area electron diffraction indicated superlattice spots disappeared after argon ion irradiation, which showing that the ordered structure of the γ′ and γ″ precipitates became disordered. The size of the precipitates became smaller with the irradiation dose increasing at 290 °C