XPS study of the ultrathin a-C:H films deposited onto ion beam nitrided AISI 316 steel

International Nuclear Information System (INIS)

Meskinis, S.; Andrulevicius, M.; Kopustinskas, V.; Tamulevicius, S.

2005-01-01

Effects of the steel surface treatment by nitrogen ion beam and subsequent deposition of the diamond-like carbon (hydrogenated amorphous carbon (a-C:H) and nitrogen doped hydrogenated amorphous carbon (a-CN x :H)) films were investigated by means of the X-ray photoelectron spectroscopy (XPS). Experimental results show that nitrogen ion beam treatment of the AISI 316 steel surface even at room temperature results in the formation of the Cr and Fe nitrides. Replacement of the respective metal oxides by the nitrides takes place. Formation of the C-N bonds was observed for both ultrathin a-C:H and ultrathin a-CN x :H layers deposited onto the nitrided steel. Some Fe and/or Cr nitrides still were presented at the interface after the film deposition, too. Increased adhesion between the steel substrate and hydrogenated amorphous carbon layer after the ion beam nitridation was explained by three main factors. The first two is steel surface deoxidisation/passivation by nitrogen as a result of the ion beam treatment. The third one is carbon nitride formation at the nitrided steel-hydrogenated amorphous carbon (or a-CN x :H) film interface

Effect of temperature and pressure on wear properties of ion nitrided AISI 316 and 409 stainless steels

International Nuclear Information System (INIS)

Fernandes, Frederico Augusto Pires; Heck, Stenio Cristaldo; Pereira, Ricardo Gomes; Casteletti, Luiz Carlos; Nascente, Pedro Augusto de Paula

2010-01-01

Stainless steels are widely used in chemical and other industries due to their corrosion resistance property. However, because of their low hardness and wear properties, their applications are limited. Many attempts have been made to increase the surface hardness of these materials by using plasma techniques. Plasma nitriding is distinguished by its effectiveness, and for presenting a relatively low cost and being a clean process, producing hard surface layers on stainless steels. Aiming to verify the influence of the temperature and pressure on the modified resultant layers, samples of AISI 316 and 409 stainless steels were plasma nitrided in two different temperatures (450 and 500°C) and pressures of 400, 500, and 600Pa for 5h. After the nitriding treatment, the layers were analyzed by means of optical microscopy and wear tests. Wear tests were conducted in a fixed-ball micro-wear machine without lubrication. After the plasma nitriding treatment on AISI 316 and 409 samples, homogeneous and continuous layers were produced and their thicknesses increased as the temperature increased, and as the pressure decreased. The nitriding treatment on the AISI 316 steel sample resulted on the formation of expanded austenite layers at 450°C, and chromium nitrides (CrN and Cr_2N) phases at 500°C. The nitriding treatment on AISI 409 sample yielded the formation of similar layers for both treatment temperatures; these layers constituted mainly by chromium (Cr_2N) and iron (Fe_2N, Fe3_N, and Fe_4N) nitrides. After the nitriding treatment, the AISI 316 steel sample presented higher wear resistance for lower temperature and pressure values. The increase on layer fragility, for higher temperature and pressure values can be responsible for this inverse tendency. The wear resistance of the nitrided AISI 409 sample followed a logic tendency: the harder the layer the better the performance, i.e. the performance was improved with the increase in both the temperature and pressure

Anomalous microstructural changes in III-nitrides under ion bombardment

International Nuclear Information System (INIS)

Kucheyev, S.O.; Williams, J.S.; Jagadish, C.

2002-01-01

Full text: Group-III nitrides (GaN, AlGaN, and InGaN) are currently a 'hot topic' in the physics and material research community due to very important technological applications of these materials in (opto)electronics. In the fabrication of III-nitride-based devices, ion bombardment represents a very attractive processing tool. However, ion-beam-produced lattice disorder and its undesirable consequences limit technological applications of ion implantation. Hence, studies of ion-beam-damage processes in Ill-nitrides are not only physically interesting but also technologically important. In this study, wurtzite GaN, AlGaN, and InGaN films exposed to ion bombardment under a wide range of irradiation conditions are studied by a combination of transmission electron microscopy (TEM), environmental scanning electron microscopy (ESEM), energy dispersive x-ray spectrometry (EDS), atomic force microscopy (AFM), cathodoluminescence (CL), and Rutherford backscattering/channeling (RBS/C) spectrometry. Results show that, unlike the situation for mature semiconductors such as Si and GaAs, Ill-nitrides exhibit a range of intriguing behavior involving extreme microstructural changes under ion bombardment. In this presentation, the following aspects are discussed: (i) formation of lattice defects during ion bombardment, (ii) ion-beam-induced phase transformations, (iii) ion-beam-produced stoichiometric imbalance and associated material decomposition, and (iv) an application of charging phenomena during ESEM imaging for studies of electrical isolation in GaN by MeV light ion irradiation. Emphasis is given to the (powerful) application of electron microscopy techniques for the understanding of physical processes occurring in Ill-nitrides under ion bombardment. Copyright (2002) Australian Society for Electron Microscopy Inc

Tribological and microstructural characteristics of ion-nitrided steels

Science.gov (United States)

Spalvins, T.

1983-01-01

Three steels AISI 4140, AISI 4340 and AISI 304 stainless steel were ion nitrided in a plasma consisting of a 75:25 mixture of H2:N2, sometimes with a trace of CH4. Their surface topography was characterized by SEM and two distinct compound phases were identified: the gamma and the epsilon. The core-case hardness profiles were also established. The low Cr alloy steels have an extended diffusion zone in contrast to the 3034 stainless steels which have a sharp interface. The depth of ion-nitriding is increased as the Cr content is decreased. Friction tests reveal that the gamma surface phase has a lower coefficient of friction than the epsilon phase. The lowest coefficient of friction is achieved when both the rider and the specimen surface are ion nitrided. Previously announced in STAR as N83-24635

Ion nitriding in 316=L stainless steel

International Nuclear Information System (INIS)

Rojas-Calderon, E.L.

1989-01-01

Ion nitriding is a glow discharge process that is used to induce surface modification in metals. It has been applied to 316-L austenitic stainless steel looking for similar benefits already obtained in other steels. An austenitic stainless steel was selected because is not hardenable by heat treatment and is not easy to nitride by gas nitriding. The samples were plastically deformed to 10, 20, 40, 50 AND 70% of their original thickness in order to obtain bulk hardening and to observe nitrogen penetration dependence on it. The results were: an increase of one to two rockwell hardness number (except in 70% deformed sample because of its thickness); an increase of even several hundreds per cent in microhardness knoop number in nitrided surface. The later surely modifies waste resistance which would be worth to quantify in further studies. Microhardness measured in an internal transversal face to nitrided surface had a gradual diminish in its value with depth. Auger microanalysis showed a higher relative concentration rate C N /C F e near the surface giving evidence of nitrogen presence till 250 microns deep. The color metallography etchant used, produced faster corrosion in nitrited regions. Therefore, corrosion studies have to be done before using ion nitrited 316-L under these chemicals. (Author)

Heavy Ion Irradiation Effects in Zirconium Nitride

International Nuclear Information System (INIS)

Egeland, G.W.; Bond, G.M.; Valdez, J.A.; Swadener, J.G.; McClellan, K.J.; Maloy, S.A.; Sickafus, K.E.; Oliver, B.

2004-01-01

Polycrystalline zirconium nitride (ZrN) samples were irradiated with He + , Kr ++ , and Xe ++ ions to high (>1.10 16 ions/cm 2 ) fluences at ∼100 K. Following ion irradiation, transmission electron microscopy (TEM) and grazing incidence X-ray diffraction (GIXRD) were used to analyze the microstructure and crystal structure of the post-irradiated material. For ion doses equivalent to approximately 200 displacements per atom (dpa), ZrN was found to resist any amorphization transformation, based on TEM observations. At very high displacement damage doses, GIXRD measurements revealed tetragonal splitting of some of the diffraction maxima (maxima which are associated with cubic ZrN prior to irradiation). In addition to TEM and GIXRD, mechanical property changes were characterized using nano-indentation. Nano-indentation revealed no change in elastic modulus of ZrN with increasing ion dose, while the hardness of the irradiated ZrN was found to increase significantly with ion dose. Finally, He + ion implanted ZrN samples were annealed to examine He gas retention properties of ZrN as a function of annealing temperature. He gas release was measured using a residual gas analysis (RGA) spectrometer. RGA measurements were performed on He-implanted ZrN samples and on ZrN samples that had also been irradiated with Xe ++ ions, in order to introduce high levels of displacive radiation damage into the matrix. He evolution studies revealed that ZrN samples with high levels of displacement damage due to Xe implantation, show a lower temperature threshold for He release than do pristine ZrN samples. (authors)

Effects of Ion-Nitriding on the Pitting Behavior of Austenitic Stainless Steels Containing Mo

International Nuclear Information System (INIS)

Cho, Yong Seok; Choe, Han Cheol; Kim, Kwan Hyu

1994-01-01

Austenitic stainless steels(ASS) containing 1-4wt% Mo were ion-nitrided at 550 .deg. C for 20hrs and 30hrs, and their pitting behavior was examined by the electrochemical measurements. The formation of multiphase surface layers composed of the ε-{(Fe, Cr) 2- 3N} and the γ'-{(Fe, Cr) 4 N} phases was observed after ion-nitriding. The compound layers were approximately 50 μm thick after nitriding for 20hrs and 70 μm thick after 30hrs. Anodic polarization curves indicated that passive current density(I p ) and critical current density(I c ) increased, and corrosion potential(E corr ) decreased as a results of ion-nitriding. As the Mo content in the ion-nitrided ASS increased, passivation breakdown potential(E b ) and repassivation potential(E r ) increased, whereas I c and I p decreased. The pit nucleation time of the ASS nitrided for 20hrs was 10 minutes, while that of the 30hr nitrided samples was 3 minutes. The nucleation and growth of pits were significantly increased with the decreasing of Mo content as well as the increasing of ion-nitriding time

A study on surface properties and high temperature oxidation behavior of ion nitrided FC-25 gray cast iron

International Nuclear Information System (INIS)

Hur, In Chang; Son, Kun Su; Yoon, Jae Hong; Cho, Tong Yul; Park, Bong Gyu; Kim, Hyun Soo; Kim, In Soo

2005-01-01

Surface properties and high temperature oxidation behavior were investigated for FC-25 Gray Cast Iron(GCI) and the ion intrided GCI(N-GCI). The GCI was pre-cleaned to improve hardness to the optimum pre-sputtering parameters with an Ar/H 2 ratio of 1/2, working pressure of 3 torr, working temperature of 550 .deg. C and working time of 1hour. The optimum nitriding conditions for the maximum hardness of 560∼575 Hv were an N 2 /H 2 ratio of 3/1, working pressure of 3 torr, and working temperature of 575 deg. C. The thickness of graphite in the GCI was increased by increasing the working temperature from 525 .deg. C to 595 .deg. C for the nitriding time of 6∼18hrs. XRD patterns showed FeO and Fe 2 O 3 peaks for both the oxidized N-GCI and GCI at temperature of 600 .deg. C and 800 .deg. C under atmospheric environment for both 24 and 60hours. At 800 .deg. C, above the Fe 4 N decomposition temperature of 680 .deg. C, the oxidation rate of N-GCI was greater than that of the GCI. The most abundant nitride, Fe 4 N, was decomposed and the nitrogen gas given off by the decomposition made the protective film porous by degassing through the film. But at 600 .deg. C, below the decomposition temperature, the degree of oxidation of N-GCI was lower than that of the GCI because the nitride film worked as protective barrier for oxidation. Finite element modeling of elastic contact wear problems was performed to demonstrate the feasibility of applying the finite element method to fretting wear problems. The elastic beam problem, with existing solutions, is treated as a numerical example. By introducing a control parameter s, which scaled up the wear constant and scaled down the cycle numbers, the algorithm was shown to greatly reduce the time required for the analysis. The work rate model was adopted in the wear model. In the three-dimensional finite element analysis, a quarterly symmetric model was used to simulate cross tubes contacting at right angles. The wear constant of

Improvement of the fatigue strength of AISI 4140 steel by an ion nitriding process

Energy Technology Data Exchange (ETDEWEB)

Celik, A. [Atatuerk Univ., Erzurum (Turkey). Dept. of Mech. Eng.; Karadeniz, S. [Dokuz Eyluel Univ., Izmir (Turkey). Dept. of Mech. Eng.

1995-06-01

The influence of plasma nitriding on the fatigue behaviour of AISI 4140 low-alloy steel was investigated under varying process conditions of temperature (500-600 C), time (1-12 h), heat treatment before ion nitriding (quenched and tempered, normalized) and gas mixture (50% H{sub 2}-50% N{sub 2}). A rotating bending fatigue machine was used to determine the fatigue strength. It was found that the plasma nitriding improves the fatigue strength and increases the fatigue limit depending on the surface hardness of the case depth. The microstructure of surface and diffusion layers was examined by optical microscopy. The fracture surface of specimens and the origin of fatigue cracks were observed by scanning electron microscopy.

Low temperature anodic bonding to silicon nitride

DEFF Research Database (Denmark)

Weichel, Steen; Reus, Roger De; Bouaidat, Salim

2000-01-01

Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bu...

Corrosion-resistant titanium nitride coatings formed on stainless steel by ion-beam-assisted deposition

International Nuclear Information System (INIS)

Baba, K.; Hatada, R.

1994-01-01

Titanium films 70nm thick were deposited on austenitic type 316L stainless steel substrates, and these specimens were irradiated with titanium ions of energy 70kV at a fluence of 1x10 17 ioncm -2 , using a metal vapor vacuum arc (MEVVA) IV metallic ion source at room temperature. After irradiation, titanium nitride (TiN) films were deposited by titanium evaporation and simultaneous irradiation by a nitrogen ion beam, with transport ratios of Ti to N atoms from 0.5 to 10.0 and an ion acceleration voltage of 2kV. The preferred orientation of the TiN films varied from left angle 200 right angle to left angle 111 right angle normal to the surface when the transport ratio was increased. With the help of Auger electron spectroscopy, interfacial mixing was verified. Nitrogen atoms were present in the state of titanium nitride for all transport ratios from 0.5 up to 10.0. However, the chemical bonding state of titanium changed from titanium nitride to the metallic state with increasing transport ratio Ti/N. The corrosion behavior was evaluated in an aqueous solution of sulfuric acid saturated with oxygen, using multisweep cyclic voltammetry measurements. Thin film deposition of pure titanium and titanium implantation prior to TiN deposition have beneficial effects on the suppression of transpassive chromium dissolution. ((orig.))

On the photon annealing of silicon-implanted gallium-nitride layers

International Nuclear Information System (INIS)

Seleznev, B. I.; Moskalev, G. Ya.; Fedorov, D. G.

2016-01-01

The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

Microstructural Characterization of Low Temperature Gas Nitrided Martensitic Stainless Steel

DEFF Research Database (Denmark)

Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

2015-01-01

The present work presents microstructural investigations of the surface zone of low temperature gas nitrided precipitation hardening martensitic stainless steel AISI 630. Grazing incidence X-ray diffraction was applied to investigate the present phases after successive removal of very thin sections...... of the sample surface. The development of epsilon nitride, expanded austenite and expanded martensite resulted from the low temperature nitriding treatments. The microstructural features, hardness and phase composition are discussed with emphasis on the influence of nitriding duration and nitriding potential....

Influence of substrate pre-treatments by Xe{sup +} ion bombardment and plasma nitriding on the behavior of TiN coatings deposited by plasma reactive sputtering on 100Cr6 steel

Energy Technology Data Exchange (ETDEWEB)

Vales, S., E-mail: sandra.vales@usp.br [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Brito, P., E-mail: ppbrito@gmail.com [Pontifícia Universidade Católica de Minas Gerais (PUC-MG), Av. Dom José Gaspar 500, 30535-901 Belo Horizonte, MG (Brazil); Pineda, F.A.G., E-mail: pipe8219@gmail.com [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Ochoa, E.A., E-mail: abigail_ochoa@hotmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Droppa, R., E-mail: roosevelt.droppa@ufabc.edu.br [Universidade Federal do ABC (UFABC), Av. dos Estados, 5001, Santo André, SP CEP 09210-580 (Brazil); Garcia, J., E-mail: jose.garcia@sandvik.com [Sandvik Coromant R& D, Lerkrogsvägen 19, SE-12680, Stockholm (Sweden); Morales, M., E-mail: monieriz@gmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Alvarez, F., E-mail: alvarez@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); and others

2016-07-01

In this paper the influence of pre-treating a 100Cr6 steel surface by Xe{sup +} ion bombardment and plasma nitriding at low temperature (380 °C) on the roughness, wear resistance and residual stresses of thin TiN coatings deposited by reactive IBAD was investigated. The Xe{sup +} ion bombardment was carried out using a 1.0 keV kinetic energy by a broad ion beam assistance deposition (IBAD, Kaufman cell). The results showed that in the studied experimental conditions the ion bombardment intensifies nitrogen diffusion by creating lattice imperfections, stress, and increasing roughness. In case of the combined pre-treatment with Xe{sup +} ion bombardment and subsequent plasma nitriding, the samples evolved relatively high average roughness and the wear volume increased in comparison to the substrates exposed to only nitriding or ion bombardment. - Highlights: • Effect of Xe ion bombardment and plasma nitriding on TiN coatings was investigated. • Xe ion bombardment with 1.0 KeV increases nitrogen retention in plasma nitriding. • 1.0 KeV ion impact energy causes sputtering, thus increasing surface roughness. • TiN coating wear is minimum after plasma nitriding due to lowest roughness.

Nitriding of Ti substrate using energetic ions from plasma focus device

International Nuclear Information System (INIS)

Henriquez, A; Bhuyan, H; Favre, M; Bora, B; Wyndham, E; Chuaqui, H; Mändl, S; Gerlach, J W; Manova, D

2012-01-01

Plasma Focus (PF) discharge is a pulsed plasma producing discharge that generates high temperature and high density plasma for a short duration. PF devices are known to emit intense ion beams pulses of characteristic energy in the keV to a few MeV range, in a time scale of tens of nanoseconds. We have previously investigated the ion flux and energy spectrum of ion beams emitted from a low energy PF, operating at 20 kV, with 1.8 kJ stored energy. It was observed that the ion beams have wide range of energy and intensity spectra with a clear angular anisotropy. Due to the wide range of ion energy and intensity spectra PF has become a subject of current interest for its applications in material sciences including surface modification and thin film deposition. The purpose of this study is the formation of titanium nitride (TiN) thin film and to investigate the structural properties of the TiN thin films in terms of PF angular positions. Substrates like Ti and Ti/Si were nitrided in a 1.8 kJ PF device at different angular positions with respect to the PF axis in order to correlate their surface properties with ion beam parameters. Preliminary characterizations of the ion implanted substrates have been conducted, using SEM, EDX and XRD. Our results indicate the formation of nanocrystalline TiN thin film only in certain angular positions. Angular dependency of the surface morphology was observed, which shows that the surface features strongly depends on ion beam energy and flux. With increasing angular positions, a reduction in the deposition rate and the sputter rate is observed. A pronounced nanostructured surface is only observed at the axis of the pinched plasma column, indicating the dominant role of sputtering and perhaps melting and fast re-crystallization of the surface in creating the nanostructures.

Ion-nitriding of austenitic stainless steels

International Nuclear Information System (INIS)

Pacheco, O.; Hertz, D.; Lebrun, J.P.; Michel, H.

1995-01-01

Although ion-nitriding is an extensively industrialized process enabling steel surfaces to be hardened by nitrogen diffusion, with a resulting increase in wear, seizure and fatigue resistance, its direct application to stainless steels, while enhancing their mechanical properties, also causes a marked degradation in their oxidation resistance. However, by adaption of the nitriding process, it is possible to maintain the improved wear resistant properties while retaining the oxidation resistance of the stainless steel. The controlled diffusion permits the growth of a nitrogen supersaturated austenite layer on parts made of stainless steel (AISI 304L and 316L) without chromium nitride precipitation. The diffusion layer remains stable during post heat treatments up to 650 F for 5,000 hrs and maintains a hardness of 900 HV. A very low and stable friction coefficient is achieved which provides good wear resistance against stainless steels under diverse conditions. Electrochemical and chemical tests in various media confirm the preservation of the stainless steel characteristics. An example of the application of this process is the treatment of Reactor Control Rod Cluster Assemblies (RCCAs) for Pressurized Water Nuclear Reactors

Low temperature gaseous nitriding of Ni based superalloys

DEFF Research Database (Denmark)

Eliasen, K. M.; Christiansen, Thomas Lundin; Somers, Marcel A. J.

2010-01-01

In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr......In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr...

Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

International Nuclear Information System (INIS)

Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

2007-01-01

Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

Characterization of Nitride Layers Formed by Nitrogen Ion Implantation into Surface Region of Iron

International Nuclear Information System (INIS)

Sudjatmoko; Subki, M. Iyos R.

2000-01-01

Ion implantation is a convenient means of modifying the physical and chemical properties of the near-surface region of materials. The nitrogen implantation into pure iron has been performed at room temperature with ion dose of 1.310 17 to 1.310 18 ions/cm 2 and ion energy of 20 to 100 keV. The optimum dose of nitrogen ions implanted into pure iron was around 2.2310 17 ions/cm 2 in order to get the maximum wear resistant. SEM micrographs and EDX show that the nitride layers were found on the surface of substrate. The nitrogen concentration profile was measured using EDX in combination with spot technique, and it can be shown that the depth profile of nitrogen implanted into substrate was nearly Gaussian. (author)

Microstructure and Hardness of High Temperature Gas Nitrided AISI 420 Martensitic Stainless Steel

Directory of Open Access Journals (Sweden)

Ibrahim Nor Nurulhuda Md.

2014-07-01

Full Text Available This study examined the microstructure and hardness of as-received and nitrided AISI 420 martensitic stainless steels. High temperature gas nitriding was employed to treat the steels at 1200°C for one hour and four hours using nitrogen gas, followed by furnace cooled. Chromium nitride and iron nitride were formed and concentrated at the outmost surface area of the steels since this region contained the highest concentration of nitrogen. The grain size enlarged at the interior region of the nitrided steels due to nitriding at temperature above the recrystallization temperature of the steel and followed by slow cooling. The nitrided steels produced higher surface hardness compared to as-received steel due to the presence of nitrogen and the precipitation of nitrides. Harder steel was produced when nitriding at four hours compared to one hour since more nitrogen permeated into the steel.

Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.

Science.gov (United States)

Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

2016-12-01

In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms.

High temperature mechanical performance of a hot isostatically pressed silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

1996-01-01

Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

Optimization of time–temperature schedule for nitridation of silicon ...

Indian Academy of Sciences (India)

pact was optimized by kinetic study of the reaction, 3Si + 2N2 = Si3N4 at four different temperatures (1250°C,. 1300°C, 1350°C and 1400°C). ... Reaction sintered silicon nitride; nitridation; reaction kinetics. 1. Introduction. Formation of ..... cation of silica layer resulted in active oxidation of silicon at high temperature to ...

Production of AlN films: ion nitriding versus PVD coating

International Nuclear Information System (INIS)

Figueroa, U.; Salas, O.; Oseguera, J.

2004-01-01

The properties of AlN render this material very attractive for optical, electronic, and tribological applications; thus, a great interest exists for the production of thin AlN films on a variety of substrates. Many methods have been developed for this purpose where two processes stand out: plasma-assisted nitriding (PAN) and PVD coating. In the present paper, we compare the processing advantages and disadvantages of both methods in terms of the characteristics of the layers formed. AlN production by ion nitriding is very sensitive to presputtering cleaning and working pressure. Layers several micrometers thick can be produced in a few hours, which are formed by a fine mixture of Al+AlN. The surface morphology of the layers is rather rough. On the other hand, formation of PVD AlN coatings by DC reactive magnetron sputtering is more readily performed and better controlled than in ion nitriding. PVD results in macroscopically smoother AlN films and with similar thickness than the ion nitrided layers but produced in shorter processing times. The morphology of the PVD AlN layers is columnar with a fairly flat surface. Mechanisms for the formation of both types of AlN layers are proposed. One of the main differences between the two processes that explain the different AlN layer morphologies is the energy of the particles that arrive at the substrate. Considering only the processing advantages and the morphology of the AlN layers formed, PVD performs better than PAN processing

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Lee, Hae-Min [Institute of NT-IT Fusion Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Jeong, Gyoung Hwa [Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Banyeon 100, Ulsan 44919 (Korea, Republic of); Kim, Sang-Wook [Department of Molecular Science and Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Kim, Chang-Koo, E-mail: changkoo@ajou.ac.kr [Department of Chemical Engineering and Department of Energy Systems Research, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of)

2017-04-01

Highlights: • Vanadium nitrides were directly synthesized by a one-step chemical precipitation method. • This method was carried out at a low temperature of 70 °C. • Vanadium nitrides had a specific capacitance of 598 F/g. • The equivalent series resistance of the vanadium nitride electrode was 1.42 Ω after 5000 cycles. - Abstract: Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2–5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Low-temperature plasma nitriding of sintered PIM 316L austenitic stainless steel

Energy Technology Data Exchange (ETDEWEB)

Mendes, Aecio Fernando; Scheuer, Cristiano Jose; Joanidis, Ioanis Labhardt; Cardoso, Rodrigo Perito; Mafra, Marcio; Klein, Aloisio Nelmo; Brunatto, Silvio Francisco, E-mail: brunatto@ufpr.br [Universidade Federal do Parana (UFPR), Curitiba, PR (Brazil). Dept. de Engenharia Mecanica. Grupo de Tecnologia de Fabricacao Assistida pro Plasma e Metalurgia do Po

2014-08-15

This work reports experimental results on sintered PIM 316L stainless steel low-temperature plasma nitriding. The effect of treatment temperature and time on process kinetics, microstructure and surface characteristics of the nitrided samples were investigated. Nitriding was carried out at temperatures of 350, 380, 410 and 440 °C , and times of 4, 8 and 16 h, using a gas mixture composed by 60% N2 + 20% H2 + 20% Ar, at a gas flow rate of 5.00 X 10{sup 6} Nm{sup 3-1}, and a pressure of 800 Pa. The treated samples were characterized by scanning electron microscopy, X-ray diffractometry and microhardness measurements. Results indicate that low-temperature plasma nitriding is a diffusion controlled process. The calculated activation energy for nitrided layer growth was 111.4 kJmol{sup -1}. Apparently precipitation-free layers were produced in this study. It was also observed that the higher the treatment temperature and time the higher is the obtained surface hardness. Hardness up to 1343 HV{sub 0.025} was verified for samples nitrided at 440 °C. Finally, the characterization of the treated surface indicates the formation of cracks, which were observed in regions adjacent to the original pores after the treatment. (author)

Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

International Nuclear Information System (INIS)

Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

1985-01-01

Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

Carbon nitride films synthesized by NH3-ion-beam-assisted deposition

International Nuclear Information System (INIS)

Song, H.W.; Cui, F.Z.; He, X.M.; Li, W.Z.; Li, H.D.

1994-01-01

Carbon nitride thin film films have been prepared by NH 3 -ion-beam-assisted deposition with bombardment energies of 200-800 eV at room temperature. These films have been characterized by transmission electron microscopy. Auger electron spectroscopy and x-ray photoelectron spectroscopy for chemical analysis. It was found that the structure of the films varied with the bombardment energy. In the case of 400 eV bombardment, the tiny crystallites immersed on an amorphous matrix were identified to be β-C 3 N 4 . X-ray photoelectron spectroscopy indicated that some carbon atoms and nitrogen atoms form unpolarized covalent bonds in these films. (Author)

Structure of boron nitride after the high-temperature shock compression

International Nuclear Information System (INIS)

Kurdyumov, A.V.; Ostrovskaya, N.F.; Pilipenko, V.A.; Pilyankevich, A.N.; Savvakin, G.I.; Trefilov, V.I.

1979-01-01

Boron nitride structure changes as a result of high temperature dynamic compression are studied. The X-ray technique and transmission electron microscopy have been applied. The data on the structure and regularities of formation of diamond-like modifications of boron nitride at high temperature impact compression permit to consider martensite transformation as the first stage of formation of the sphalerite phase stable at high pressures. The second stage is possible if the temperature at the impact moment is sufficiently high for intensive diffusion processes

Mechanical properties and corrosion resistance of supermartensitic stainless steel surfaces nitrided by plasma immersion ion implantation

Energy Technology Data Exchange (ETDEWEB)

Schibicheski, Bruna Corina Emanuely; Souza, Gelson Biscaia de; Oliveira, Willian Rafael de; Serbena, Francisco Carlos, E-mail: bruna_schibicheski@hotmail.com [Universidade Estadual de Ponta Grossa (UEPG), PR (Brazil); Marino, Cláudia E.B. [Universidade Federal do Paraná (UFPR), Curitiba, PR (Brazil)

2016-07-01

Full text: The supermartensitic stainless steel UNS S41426 is employed in marine oil and gas extraction ducts, where it is subjected to severe conditions of temperature, pressure and exposure to corrosive agents (as the H{sub 2}S). In such environments, pitting corrosion is a major cause of degradation of metallic alloys [1]. This work investigated the effectiveness of the nitrogen inlet, attained here by the plasma immersion ion implantation (PIII) technique, in improving the mechanical properties and corrosion resistance of the material surface. Samples were initially austenitized at 1100°C with a subsequent room temperature oil quenching in order to obtain a fully martensitic structure. The nitriding was carried out under 10 kV implantation energy and 30 ms pulse width. The temperatures ranged from 300 °C to 400°C, achieved by controlling the pulse repetition rates. Samples were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, instrumented indentation, scanning electron microscopy, potentiodynamic anodic polarization tests (in NaCl solution), and cathodic hydrogenation tests (in H{sub 2}SO{sub 4} solution). The PIII nitriding produced stratified layers up to 30 mm thick containing nitrogen expanded martensite and iron nitride phases (γ’-Fe{sub 4}N, ε- Fe{sub 2+x}N), depending on the treatment temperature. Consequently, the surface hardness increased from ∼3GPa (reference) up to ∼13GPa (400°C). Regarding the corrosion resistance, the nitrided surfaces presented a significant improvement as compared with the pristine surface, evidenced by the increase of the corrosion potential, which was also correlated to the hydrogen embrittlement reduction and the subsequent suppression of morphological changes. References: [1] M.G. Fontana, Corrosion Engineering, Singapore: McGraw-Hill, 1987. [2] B.C.E.S. Kurelo et al., Applied Surface Science 349 (2015) 403-414. (author)

Molecular carbon nitride ion beams for enhanced corrosion resistance of stainless steel

Science.gov (United States)

Markwitz, A.; Kennedy, J.

2017-10-01

A novel approach is presented for molecular carbon nitride beams to coat stainless surfaces steel using conventional safe feeder gases and electrically conductive sputter targets for surface engineering with ion implantation technology. GNS Science's Penning type ion sources take advantage of the breaking up of ion species in the plasma to assemble novel combinations of ion species. To test this phenomenon for carbon nitride, mixtures of gases and sputter targets were used to probe for CN+ ions for simultaneous implantation into stainless steel. Results from mass analysed ion beams show that CN+ and a variety of other ion species such as CNH+ can be produced successfully. Preliminary measurements show that the corrosion resistance of stainless steel surfaces increased sharply when implanting CN+ at 30 keV compared to reference samples, which is interesting from an application point of view in which improved corrosion resistance, surface engineering and short processing time of stainless steel is required. The results are also interesting for novel research in carbon-based mesoporous materials for energy storage applications and as electrode materials for electrochemical capacitors, because of their high surface area, electrical conductivity, chemical stability and low cost.

Erosion-corrosion resistance properties of 316L austenitic stainless steels after low-temperature liquid nitriding

Science.gov (United States)

Zhang, Xiangfeng; Wang, Jun; Fan, Hongyuan; Pan, Dong

2018-05-01

The low-temperature liquid nitriding of stainless steels can result in the formation of a surface zone of so-called expanded austenite (S-phase) by the dissolution of large amounts of nitrogen in the solid solution and formation of a precipitate-free layer supersaturated with high hardness. Erosion-corrosion measurements were performed on low-temperature nitrided and non-nitrided 316L stainless steels. The total erosion-corrosion, erosion-only, and corrosion-only wastages were measured directly. As expected, it was shown that low-temperature nitriding dramatically reduces the degree of erosion-corrosion in stainless steels, caused by the impingement of particles in a corrosive medium. The nitrided 316L stainless steels exhibited an improvement of almost 84% in the erosion-corrosion resistance compared to their non-nitrided counterparts. The erosion-only rates and synergistic levels showed a general decline after low-temperature nitriding. Low-temperature liquid nitriding can not only reduce the weight loss due to erosion but also significantly reduce the weight loss rate of interactions, so that the total loss of material decreased evidently. Therefore, 316L stainless steels displayed excellent erosion-corrosion behaviors as a consequence of their highly favorable corrosion resistances and superior wear properties.

Martensitic Stainless Steels Low-temperature Nitriding: Dependence of Substrate Composition

OpenAIRE

Ferreira, Lauro Mariano; Brunatto, Silvio Francisco; Cardoso, Rodrigo Perito

2015-01-01

Low-temperature plasma assisted nitriding is a very promising technique to improve surface mechanical properties of stainless steels, keeping unaltered or even improving their surface corrosion resistance. During treatment, nitrogen diffuses into the steel surface, increasing its hardness and wear resistance. In the present work the nitriding process of different martensitic stainless steels was studied. As-quenched AISI 410, 410NiMo, 416 and 420 stainless steel samples were plasma nitrided a...

Low Temperature Gaseous Nitriding of a Stainless Steel Containing Strong Nitride Formers

DEFF Research Database (Denmark)

Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

Low temperature thermochemical surface hardening of the precipitation hardening austenitic stainless steel A286 in solution treated state was investigated. A286 contains, besides high amounts of Cr, also substantial amounts of strong nitride formers as Ti, Al and V. It is shown that simultaneous...

Low-Temperature Nitriding of Deformed Austenitic Stainless Steels with Various Nitrogen Contents Obtained by Prior High-Temperature Solution Nitriding

DEFF Research Database (Denmark)

Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

2016-01-01

In the past decades, high nitrogen steels (HNS) have been regarded as substitutes for conventional austenitic stainless steels because of their superior mechanical and corrosion properties. However, the main limitation to their wider application is their expensive production process....... As an alternative, high-temperature solution nitriding has been applied to produce HNS from three commercially available stainless steel grades (AISI 304L, AISI 316, and EN 1.4369). The nitrogen content in each steel alloy is varied and its influence on the mechanical properties and the stability of the austenite...... investigated. Both hardness and yield stress increase and the alloys remain ductile. In addition, strain-induced transformation of austenite to martensite is suppressed, which is beneficial for subsequent low-temperature nitriding of the surface of deformed alloys. The combination of high- and low...

Physical vapor deposition of cubic boron nitride thin films

International Nuclear Information System (INIS)

Kester, D.J.

1991-01-01

Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

Titanium Nitride and Nitrogen Ion Implanted Coated Dental Materials

Directory of Open Access Journals (Sweden)

David W. Berzins

2012-07-01

Full Text Available Titanium nitride and/or nitrogen ion implanted coated dental materials have been investigated since the mid-1980s and considered in various applications in dentistry such as implants, abutments, orthodontic wires, endodontic files, periodontal/oral hygiene instruments, and casting alloys for fixed restorations. Multiple methodologies have been employed to create the coatings, but detailed structural analysis of the coatings is generally lacking in the dental literature. Depending on application, the purpose of the coating is to provide increased surface hardness, abrasion/wear resistance, esthetics, and corrosion resistance, lower friction, as well as greater beneficial interaction with adjacent biological and material substrates. While many studies have reported on the achievement of these properties, a consensus is not always clear. Additionally, few studies have been conducted to assess the efficacy of the coatings in a clinical setting. Overall, titanium nitride and/or nitrogen ion implanted coated dental materials potentially offer advantages over uncoated counterparts, but more investigation is needed to document the structure of the coatings and their clinical effectiveness.

Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

Science.gov (United States)

Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

2018-06-01

Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

Recombination and photosensitivity centres in boron nitride irradiated with ions

International Nuclear Information System (INIS)

Kabyshev, A.; Konusov, F.; Lopatin, V.

2001-01-01

The physical-chemical processes, taking place during the irradiation of dielectrics with ions distort the electron structure of the compounds and generate additional localise state in the forbidden zone (FZ). Consequently, the semiconductor layer with the specific surface density of σ ≥ 10 -10 S/ forms on the surface of the dielectric. In addition to his, the high concentration of the radiation-induced defects changes the optical and photoelectric properties of the materials and also the energy characteristics. Analysis of the photoelectric properties indicates that the recombination processes take part in electric transport. These processes restricted the increase of the photosensitivity and changing the kinetics of relaxation of photo conductivity (σ hv ). The practical application of the boron nitride (BN) the in the thermonuclear systems (for example, Ref. 7), stimulates research into the reasons for the deceleration of its properties under the effect of radiation of various types. The conductivity of non-irradiated boron nitride is of the electron-hole nature with a large fraction of the activation component in exchange of the charge carriers between the levels of the defects and the forbidden zones. On the basis of the correlation of the energy and kinetic parameters of luminescence and , the authors of Ref. 8 constructed a model of electron transfers accompanying the electric transport of the boron nitride. In addition to ion-thermal modification, the conductivity of boron nitride is also of the electron-hole nature and is accompanied by luminescence. Examination of the characteristics of luminescence may be useful for obtaining more information on the transport mechanism. In this work, in order to clarify the main parameters of the forbidden band, detailed investigations were carried out into the spectrum of the electronic states of radiation defects which determine the photoelectric and luminescence properties of the modified boron nitride. The

Aspects of the practical application of titanium alloys after low temperature nitriding glow discharge in hydrogen- free -gas media

International Nuclear Information System (INIS)

Mashovets, N.S.; Pastukh, I.M.; Voloshko, S.M.

2017-01-01

Highlights: • Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. • Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). • The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. - Abstract: X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples’ argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm 2 . The above material shows the promise of the technology of low-temperature

Aspects of the practical application of titanium alloys after low temperature nitriding glow discharge in hydrogen- free -gas media

Energy Technology Data Exchange (ETDEWEB)

Mashovets, N.S., E-mail: mashovets@rambler.ru [Khmelnickiy National University (Ukraine); Pastukh, I.M., E-mail: pastim@mail.ru [Khmelnickiy National University (Ukraine); Voloshko, S.M. [Khmelnickiy National University (Ukraine); National Technical University of Ukraine “Kyiv Polytechnic Institute” (Ukraine)

2017-01-15

Highlights: • Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. • Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). • The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. - Abstract: X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples’ argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm{sup 2}. The above material shows the promise of the technology of low-temperature

Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

International Nuclear Information System (INIS)

Czarnowska, Elżbieta; Borowski, Tomasz; Sowińska, Agnieszka; Lelątko, Józef; Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał; Wierzchoń, Tadeusz

2015-01-01

Highlights: • Low temperature plasma nitriding process of NiTi shape memory alloy is presented. • The possibility of treatment details of sophisticated shape. • TiN surface layer has diffusive character. • TiN surface layer increases corrosion resistance of NiTi alloy. • Produced TiN layer modify the biological properties of NiTi alloy. - Abstract: NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications

Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

Energy Technology Data Exchange (ETDEWEB)

Czarnowska, Elżbieta [Children' s Memorial Health Institute, Pathology Department, Al. Dzieci Polskich 20, 04-730 Warsaw (Poland); Borowski, Tomasz [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland); Sowińska, Agnieszka [Children' s Memorial Health Institute, Pathology Department, Al. Dzieci Polskich 20, 04-730 Warsaw (Poland); Lelątko, Józef [Silesia University, Faculty of Computer Science and Materials Science, 75 Pułku Piechoty 1A, 41-500 Chorzów (Poland); Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland); Wierzchoń, Tadeusz, E-mail: twierz@inmat.pw.edu.pl [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland)

2015-04-15

Highlights: • Low temperature plasma nitriding process of NiTi shape memory alloy is presented. • The possibility of treatment details of sophisticated shape. • TiN surface layer has diffusive character. • TiN surface layer increases corrosion resistance of NiTi alloy. • Produced TiN layer modify the biological properties of NiTi alloy. - Abstract: NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications.

The thermal power of aluminum nitride at temperatures between 1350 and 1650 deg C in argon and nitrogen atmospheres. Ph.D. Thesis - Rhine-Westphalia High School at Aachen

Science.gov (United States)

Fischer, W. A.; Schuh, B.

1978-01-01

The test apparatus for measuring the thermal voltage of aluminum nitride for temperature differences of up to + or - 60 C between 1350 and 1650 C is described. The thermal power and its homogeneous proportion are determined and the heat transfer of the migration ions resulting from the homogeneous thermal power is calculated. The conduction mechanism in aluminum nitride is discussed.

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

Science.gov (United States)

Lee, Hae-Min; Jeong, Gyoung Hwa; Kim, Sang-Wook; Kim, Chang-Koo

2017-04-01

Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2-5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Surface analysis in steel nitrides by using Moessbauer spectroscopy

International Nuclear Information System (INIS)

Figueiredo, R.S. de.

1991-07-01

The formation of iron nitride layer at low temperatures, 600-700 K, by Moessbauer spectroscopy is studied. These layers were obtained basically through two different processes: ion nitriding and ammonia gas nitriding. A preliminary study about post-discharge nitriding was made using discharge in hollow cathode as well as microwave excitation. The assembly of these chambers is also described. The analysis of the nitrided samples was done by CEMS and CXMS, aided by optical microscopy, and the CEMS and CXMS detectors were constructed by ourselves. We also made a brief study about these detectors, testing as acetone as the mixture 80% He+10% C H 4 as detection gases for the use of CEMS. The surface analysis of the samples showed that in the ammonia gas process nitriding the nitrided layer starts by the superficial formation of an iron nitride rich nitrogen. By thermal evolution this nitride promotes the diffusion of nitrogen and the formation of other more stable nitrides. (author)

Low-temperature nitriding of austenitic steel in a vibrofluidized bed

Science.gov (United States)

Baraz, V. R.; Grachev, S. V.

1999-11-01

The prospects for use of a vibrofluidized bed (VFB) for low-temperature nitrogen saturation of high-strength austenitic steel based on Cr-Ni-Mn (12Kh17N8G2S2MF) are considered. The positive effect of preliminary plastic deformation on the intensity of nitriding is described. The temperature and time parameters of nitriding in a VFB for strain-aging austenitic steel 12Kh17N8G2S2MF are shown to be adequate for the regimes of the final heat-treatment operation of aging. This creates the possibility of combining the operations of surface alloying and strain aging into a single cycle. This combined treatment increases substantially the resistance of the steel to cyclic loads while preserving the strength parameters. It is shown that the presented method of low-temperature nitriding in a VFB is expedient for improving the service characteristics of austenitic steel 12Kh17N8G2S2MF used for production of force springs of automobile brake systems.

Measurement of ion species produced due to bombardment of 450 eV N{sub 2}{sup +} ions with hydrocarbons-covered surface of tungsten: Formation of tungsten nitride

Energy Technology Data Exchange (ETDEWEB)

Kumar, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Bhatt, P. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, A. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Singh, B.K.; Singh, B.; Prajapati, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Shanker, R., E-mail: shankerorama@gmail.com [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India)

2016-08-01

A laboratory experiment has been performed to study the ions that are produced due to collisions of 450 eV N{sub 2}{sup +} ions with a hydrocarbons-covered surface of polycrystalline tungsten at room temperature. Using a TOF mass spectrometry technique, the product ions formed in these collisions have been detected, identified and analyzed. Different ion–surface reaction processes, namely, neutralization, reflection, surface induced dissociation, surface induced chemical reactions and desorption are observed and discussed. Apart from the presence of desorbed aliphatic hydrocarbon and other ions, the mass spectra obtained from the considered collisions show the formation and sputtering of tungsten nitride (WN). A layer of WN on tungsten surface is known to decrease the sputtering of bulk tungsten in fusion devices more effectively than when the tungsten is bombarded with other seeding gases (He, Ar). It is further noted that there is a negligible diffusion of N in the bulk tungsten at room temperature.

Effect of microstructure on the high temperature strength of nitride

Indian Academy of Sciences (India)

Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite. J Rakshit P K Das. Composites Volume ... The effect of these parameters on room temperature and high temperature strength of the composite up to 1300°C in ambient condition were studied. The high temperature flexural ...

Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

Science.gov (United States)

Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

2018-03-01

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

Low temperature high density plasma nitriding of stainless steel molds for stamping of oxide glasses

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2016-01-01

Full Text Available Various kinds of stainless steels have been widely utilized as a die for mold- and direct-stamping processes of optical oxide glasses. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical oxide-glass elements. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness over 1400 HV within its thickness of 50 μm without any formation of nitrides after plasma nitriding at 693 K for 14.4 ks. This plasma-nitrided mold was utilized for mold-stamping of two colored oxide glass plates at 833 K; these plates were successfully deformed and joined into a single glass plate by this stamping without adhesion or galling of oxide glasses onto the nitrided mold surface.

Superconducting structure with layers of niobium nitride and aluminum nitride

International Nuclear Information System (INIS)

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions

International Nuclear Information System (INIS)

Lin Chenglu; Hemment, P.L.F.; Li Jinhua; Zou Shichang

1994-01-01

Aluminium films with a thickness of 7000 A (containing 0.85% copper) were deposited on silicon substrates. 400 keV N 2 + or 350 keV N + ions were implanted into the aluminium films or at the interface between the aluminium and silicon, respectively. Automatic spreading resistance (ASR), Fourier transform infrared spectroscopy (FTIR) and Rutherford backscattering (RBS) and channelling were used to characterize the formation of aluminium nitride and the depth distribution of the Cu impurity in the aluminium films after ion implantation and post-annealing. The formation of a stoichiometric AlN layer with high resistance was evident from ASR, RBS analysis and FTIR measurements by the presence of the absorption band at 650 cm -1 . When the implanted nitrogen is near the interface between the aluminium and silicon, a multilayer structure can be obtained, which consists of aluminium, aluminium nitride and the silicon substrate. Cu, which is a background impurity in the deposited aluminium films, segregated into the synthesised aluminium nitride during high dose nitrogen ion implantation. This is due to irradiation-induced segregation during ion implantation. (orig.)

Modernization of serial facility 'BULAT-6' for synthesis of vacuum-arc coatings by the method of plasma-based ion implantation and deposition as well as ion hydrogen-free nitriding

International Nuclear Information System (INIS)

Shulaev, V.M.; Andreev, A.A.; Rudenko, V.P.

2008-01-01

The model of laboratory vacuum-arc facility for realization of the method of plasma-based ion implantation and deposition is worked out by means modernization of serial industrial facility 'BULAT-6'. The facility is suitable for surface modification of instrumental steel items, including the low-alloyed steels with low temperatures of tempering. The low-temperature deposition of coatings on the preliminary nitrided surface of instrument permits obtaining dense coating with minimum maintenance of macroparticles, as well as with coatings superhigh adhesion to the substrate and with superhardness. The coatings possess high property stableness in time.

Nitrogen uptake and rate-limiting step in low-temperature nitriding of iron

NARCIS (Netherlands)

Inia, DK; Vredenberg, AM; Habraken, FHPM; Boerma, DO

1999-01-01

Recently, a method to nitride iron in NH3 ambients at low temperature (225-350 degrees C) has been developed. In this method, the Fe is covered with a thin (similar to 40 nm) Ni layer, which acts as a catalyst for the nitriding process. From experiments, in which the amount of nitrogen uptake is

Hydrogen permeation modification of 4140 steel by ion nitriding with pulsed plasmas

Energy Technology Data Exchange (ETDEWEB)

Bruzzoni, P.; Ortiz, M. [Comision Nacional de Energia Atomica, Buenos Aires (Argentina); Bruehl, S.P.; Gomez, B.J.A.; Feugeas, J.N. [Inst. de Fisica Rosario (UNR-CONICET), Rosario (Argentina); Nosei, L. [Inst. de Mecanica Aplicada y Estructuras (UNR), Rosario (Argentina)

1998-11-10

It is widely known that the hydrogen in steel produces embrittlement. This effect may cause the failure of the elements (confining walls, mechanical parts, etc.) whose surfaces are in contact with this gas or with processes in which hydrogen is continuously generated. In this work it is shown that the ion nitriding of the surface of AISI 4140 is a good mechanism to act as a barrier against hydrogen permeation in its bulk. The ion nitriding was performed using a square wave DC glow discharge. The development of a compound layer of iron nitrides was observed as the cause of the hydrogen permeation reduction. For equal duration of treatment, thicker compound layers were developed in higher discharge/post-discharge ratios in the square wave of the applied voltage onto the sample (cathode), with a greater reduction of hydrogen permeation coefficient as a consequence. Nevertheless, the permeation was not reduced to zero in any of the treatment conditions used. The results of the analysis of the permeation tests and the image of the photomicrographs showed that the existence of cracks, fractures, failures, etc. in the compound layer (pre-existing in the AISI 4140 steel) could be the cause of the residual hydrogen permeation. This can be attributed to the movement of the hydrogen through these defects diffusing through the original {alpha}-Fe phase of the non-treated steel. (orig.) 11 refs.

Modification of Low-Alloy Steel Surface by High-Temperature Gas Nitriding Plus Tempering

Science.gov (United States)

Jiao, Dongling; Li, Minsong; Ding, Hongzhen; Qiu, Wanqi; Luo, Chengping

2018-02-01

The low-alloy steel was nitrided in a pure NH3 gas atmosphere at 640 660 °C for 2 h, i.e., high-temperature gas nitriding (HTGN), followed by tempering at 225 °C, which can produce a high property surface coating without brittle compound (white) layer. The steel was also plasma nitriding for comparison. The composition, microstructure and microhardness of the nitrided and tempered specimens were examined, and their tribological behavior investigated. The results showed that the as-gas-nitrided layer consisted of a white layer composed of FeN0.095 phase (nitrided austenite) and a diffusional zone underneath the white layer. After tempering, the white layer was decomposed to a nano-sized (α-Fe + γ'-Fe4N + retained austenite) bainitic microstructure with a high hardness of 1150HV/25 g. Wear test results showed that the wear resistance and wear coefficient yielded by the complex HTGN plus tempering were considerably higher and lower, respectively, than those produced by the conventional plasma nitriding.

Evaluation of the Effect of Different Plasma-Nitriding Parameters on the Properties of Low-Alloy Steel

Science.gov (United States)

Zdravecká, Eva; Slota, Ján; Solfronk, Pavel; Kolnerová, Michaela

2017-07-01

This work is concerned with the surface treatment (ion nitriding) of different plasma-nitriding parameters on the characteristics of DIN 1.8519 low-alloy steel. The samples were nitrided from 500 to 570 °C for 5-40 h using a constant 25% N2-75% H2 gaseous mixture. Lower temperature (500-520 °C) favors the formation of compound layers of γ' and ɛ iron nitrides in the surface layers, whereas a monophase γ'-Fe4 N layer can be obtained at a higher temperature. The hardness of this layer can be obtained when nitriding is performed at a higher temperature, and the hardness decreases when the temperature increases to 570 °C. These results indicate that pulsed plasma nitriding is highly efficient at 550 °C and can form thick and hard nitrided layers with satisfactory mechanical properties. The results show the optimized nitriding process at 540 °C for 20 h. This process can be an interesting means of enhancing the surface hardness of tool steels to forge dies compared to stamped steels with zinc coating with a reduced coefficient of friction and improving the anti-sticking properties of the tool surface.

Some Temperature Effects on AISI-304 Nitriding in an Inductively Coupled RF Plasma

International Nuclear Information System (INIS)

Valencia-Alvarado, R.; Barocio, S. R.; Mercado-Cabrera, A.; Pena-Eguiluz, R.; Munoz-Castro, A. E.; Piedad-Beneitez, A. de la; Rosa-Vazquez, J. de la; Lopez-Callejas, R.; Godoy-Cabrera, O. G.

2006-01-01

Some recent results obtained from nitriding AISI 304 stainless steel samples, 1.2 cm in diameter and 0.5 cm thick are reported here in the case of an 85% hydrogen and 15% nitrogen mixture work gas. The process was carried out from 300 to 400 W for (13.56 MHz) inductively coupled plasma within a 60 cm long pyrex glass tube 3.5 cm in diameter where the samples were biased up to -300 V with respect to earth. The resulting hardness appears to be a function of the substrate temperature which varied from 200 deg. C at a 0 V bias to 550 deg. C at -300 V. The plasma density at 400 W reached 3x1010 cm-3 with a 4 eV electron temperature. Prior to nitriding, all the samples were polished with 0.05 μm diamond paste, leading to a 30 nm average roughness (Ra). After nitriding at -300 V, the Ra rose until ∼400 nm while hardness values of 1500 HV under 300 g loads were measured. X ray diffraction indicates that the extended phase amplitude (γN), Fe and Cr nitride depends on the substrate temperature

Use of aluminum nitride to obtain temperature measurements in a high temperature and high radiation environment

Science.gov (United States)

Wernsman, Bernard R.; Blasi, Raymond J.; Tittman, Bernhard R.; Parks, David A.

2016-04-26

An aluminum nitride piezoelectric ultrasonic transducer successfully operates at temperatures of up to 1000.degree. C. and fast (>1 MeV) neutron fluencies of more than 10.sup.18 n/cm.sup.2. The transducer comprises a transparent, nitrogen rich aluminum nitride (AlN) crystal wafer that is coupled to an aluminum cylinder for pulse-echo measurements. The transducer has the capability to measure in situ gamma heating within the core of a nuclear reactor.

Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition

Science.gov (United States)

Baba, K.; Hatada, R.; Emmerich, R.; Enders, B.; Wolf, G. K.

1995-12-01

Silicon nitride films SiN x were deposited on 316L austenitic stainless steel substrates by silicon evaporation and simultaneous nitrogen ion irradiation with an acceleration voltage of 2 kV. In order to study the influence of the nitrogen content on changes in stoichiometry, structure, morphology, thermal oxidation behaviour and corrosion behaviour, the atom to ion transport ratio was systematically varied. The changes of binding states and the stoichiometry were evaluated with XPS and AES analysis. A maximum nitrogen content was reached with a {Si}/{N} transport ratio lower than 2. The films are chemically inert when exposed to laboratory atmosphere up to a temperature of more than 1000°C. XRD and SEM measurements show amorphous and featureless films for transport ratios {Si}/{N} from 1 up to 10. The variation of the corrosion behaviour of coated stainless steel substrates in sulphuric acid and hydrochloric acid shows a minimum at medium transport ratios. This goes parallel with changes in porosity and adhesion. Additional investigations showed that titanium implantation as an intermediate step improves the corrosion resistance considerably.

Electrochemical properties of lanthanum nitride with calcium nitride additions

International Nuclear Information System (INIS)

Lesunova, R.P.; Fishman, L.S.

1986-01-01

This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

Formation of oriented nitrides by N+ ion implantation in iron single crystals

International Nuclear Information System (INIS)

Costa, A.R.G.; Silva, R.C. da; Ferreira, L.P.; Carvalho, M.D.; Silva, C.; Franco, N.; Godinho, M.

2014-01-01

Iron single crystals were implanted with nitrogen at room temperature, with a fluence of 5×10 17 cm −2 and 50 keV energy, to produce iron nitride phases and characterize the influence of the crystal orientation. The stability and evolution of the nitride phases and diffusion of implanted nitrogen were studied as a function of successive annealing treatments at 250 °C in vacuum. The composition, structure and magnetic properties were characterized using RBS/channeling, X-Ray Diffraction, Magnetic Force Microscopy, Magneto-optical Kerr Effect and Conversion Electron Mössbauer Spectroscopy. In the as-implanted state the formation of Fe 2 N phase was clearly identified in all single crystals. This phase is not stable at 250 °C and annealing at this temperature promotes the formation of ε-Fe 3 N, or γ′-Fe 4 N, depending on the orientation of the substrate. - Highlights: • Oriented magnetic iron nitrides were obtained by nitrogen implantation into iron single crystals. • The stable magnetic nitride phase at 250 °C depends on the orientation of the host single crystal, being γ'-Fe 4 N or ε-Fe 3 N. • The easy magnetization axis was found to lay in the (100) plane for cubic γ'-Fe 4 N and out of (100) plane for hexagonal ε-Fe 3 N

Sputter deposition of tantalum-nitride films on copper using an rf-plasma

International Nuclear Information System (INIS)

Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

1994-01-01

A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

Fabrication of vanadium nitride by carbothermal nitridation reaction

International Nuclear Information System (INIS)

Wang Xitang; Wang Zhuofu; Zhang Baoguo; Deng Chengji

2005-01-01

Vanadium nitride is produced from V 2 O 5 by carbon-thermal reduction and nitridation. When the sintered temperature is above 1273 K, VN can be formed, and the nitrogen content of the products increased with the firing temperature raised, and then is the largest when the sintered temperature is 1573 K. The C/V 2 O 5 mass ratio of the green samples is the other key factor affecting on the nitrogen contents of the products. The nitrogen content of the products reaches the most when the C/V 2 O 5 mass ratio is 0.33, which is the theoretical ratio of the carbothermal nitridation of V 2 O 5 . (orig.)

Phonon dispersion relation of uranium nitride above and below the Neel temperature

International Nuclear Information System (INIS)

Dolling, G.; Holden, T.M.; Svensson, E.C.; Buyers, W.J.L.; Lander, G.H.

1977-01-01

Neutron coherent inelastic scattering measurements have been made of the phonon dispersion relation of uranium nitride both above and below the Neel temperature T N = 50 K. Within the precision of the measurements, about 1% in frequency and 10% in line width and in scattered neutron intensity, no significant changes in these phonon properties were observed as a function of temperature other than those arising from population factor changes and a small stiffening of the lattice as the temperature decreases. At 4.2 K, two acoustic and two optic branches have been determined for each of the [001], [110] and [111] directions. The optic mode measurements revealed (a) a 20% variation in frequency across the Brillouin zone and (b) and interesting disposition of the LO and TO modes, such that ν LO > ν TO along [001] and [11-], while the reverse is true along the [111] directions. Within the experimental resolution, the LO and TO modes are degenerate near q = 0. We have been unable to obtain any satisfactory description of these results on the basis of conventional theoretical treatments (e.g. rigid-ion or shell models). Other possible interpretations of the results are discussed. (author)

Room-temperature ballistic transport in III-nitride heterostructures.

Science.gov (United States)

Matioli, Elison; Palacios, Tomás

2015-02-11

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the short electron mean-free-path at RT requires nanoscale devices for which surface effects are a limitation in these materials. We explore the unique properties of wide band-gap III-nitride semiconductors to demonstrate RT ballistic devices. A theoretical model is proposed to corroborate experimentally their optical phonon energy of 92 meV, which is ∼4× larger than in other III-V semiconductors. This allows RT ballistic devices operating at larger voltages and currents. An additional model is described to determine experimentally a characteristic dimension for ballistic transport of 188 nm. Another remarkable property is their short carrier depletion at device sidewalls, down to 13 nm, which allows top-down nanofabrication of very narrow ballistic devices. These results open a wealth of new systems and basic transport studies possible at RT.

Structural materialization of stainless steel molds and dies by the low temperature high density plasma nitriding

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2015-01-01

Full Text Available Various kinds of stainless steels have been widely utilized as a mold substrate material for injection molding and as a die for mold-stamping and direct stamping processes. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical elements at present. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness of 1400 Hv within its thickness of 40 μm without any formation of nitrides after 14.4 ks plasma nitriding at 693 K. This nitrogen solid-solution treated stainless steel had thermal resistivity even at the mold-stamping conditions up to 900 K.

Fatigue improvement in low temperature plasma nitrided Ti–6Al–4V alloy

Energy Technology Data Exchange (ETDEWEB)

Farokhzadeh, K.; Edrisy, A., E-mail: edrisy@uwindsor.ca

2015-01-03

In this study a low temperature (600 °C) treatment was utilized to improve the fatigue performance of plasma nitrided Ti–6Al–4V alloy by optimization of microstructure. In order to study the fatigue properties, rotation bending tests were conducted, the S–N curves were constructed, and the results were compared with those obtained by an elevated temperature treatment (900 °C) as well as conventional gas/plasma nitriding treatments reported in literature. The plasma nitrided alloy at 600 °C showed an endurance limit of 552 MPa which was higher than those achieved by conventional nitriding treatments performed at 750–1100 °C. In contrast, plasma nitriding at 900 °C resulted in the reduction of fatigue life by at least two orders of magnitude compared to the 600 °C treatment, accompanied by a 13% reduction of tensile strength and a 78% reduction of ductility. The deterioration of mechanical properties after the elevated temperature treatment was attributed to the formation of a thick compound layer (∼6 µm) on the surface followed by an α-Case (∼20 µm) and phase transformation in the bulk microstructure from fully equiaxed to bimodal with coarse grains (∼5 times higher average grain size value). The microstructure developed at 600 °C consisted of a thin compound layer (<2 µm) and a deep nitrogen diffusion zone (∼45 µm) while the bulk microstructure was maintained with only 40% grain growth. The micromechanisms of fatigue failures were identified by examination of the fracture surfaces under a scanning electron microscope (SEM). It was found that fatigue failure in the plasma nitrided alloy initiated from the surface in the low cycle region (N≤10{sup 5} cycles) and propagated in a ductile manner leading to the final rupture. No failures were observed in the high cycle region (N>10{sup 5} cycles) and the nitrided alloy endured cyclic loading until the tests were stopped at 10{sup 7} cycles. The thin morphology of the compound layer in this

Fatigue improvement in low temperature plasma nitrided Ti–6Al–4V alloy

International Nuclear Information System (INIS)

Farokhzadeh, K.; Edrisy, A.

2015-01-01

In this study a low temperature (600 °C) treatment was utilized to improve the fatigue performance of plasma nitrided Ti–6Al–4V alloy by optimization of microstructure. In order to study the fatigue properties, rotation bending tests were conducted, the S–N curves were constructed, and the results were compared with those obtained by an elevated temperature treatment (900 °C) as well as conventional gas/plasma nitriding treatments reported in literature. The plasma nitrided alloy at 600 °C showed an endurance limit of 552 MPa which was higher than those achieved by conventional nitriding treatments performed at 750–1100 °C. In contrast, plasma nitriding at 900 °C resulted in the reduction of fatigue life by at least two orders of magnitude compared to the 600 °C treatment, accompanied by a 13% reduction of tensile strength and a 78% reduction of ductility. The deterioration of mechanical properties after the elevated temperature treatment was attributed to the formation of a thick compound layer (∼6 µm) on the surface followed by an α-Case (∼20 µm) and phase transformation in the bulk microstructure from fully equiaxed to bimodal with coarse grains (∼5 times higher average grain size value). The microstructure developed at 600 °C consisted of a thin compound layer (<2 µm) and a deep nitrogen diffusion zone (∼45 µm) while the bulk microstructure was maintained with only 40% grain growth. The micromechanisms of fatigue failures were identified by examination of the fracture surfaces under a scanning electron microscope (SEM). It was found that fatigue failure in the plasma nitrided alloy initiated from the surface in the low cycle region (N≤10 5 cycles) and propagated in a ductile manner leading to the final rupture. No failures were observed in the high cycle region (N>10 5 cycles) and the nitrided alloy endured cyclic loading until the tests were stopped at 10 7 cycles. The thin morphology of the compound layer in this study restricted

Feasibility study of Boron Nitride coating on Lithium-ion battery casing

International Nuclear Information System (INIS)

Saw, L.H.; Ye, Y.; Tay, A.A.O.

2014-01-01

Increasing in public awareness about global warming and exhaustion of energy resources has led to a flourishing electric vehicle industry that would help realize a zero-emission society. The thermal management of battery packs, which is an essential issue closely linked to a number of challenges for electric vehicles including cost, safety, reliability and lifetime, has been extensively studied. However, relatively little is known about the thermal effect of polymer insulation on the Lithium-ion battery casing. This study investigates the feasibility of replacing the polymer insulation with a Boron Nitride coating on the battery casing using the Taguchi experimental method. The effect of casing surface roughness, coating thickness and their interaction were examined using orthogonal array L 9 (3 4 ). Nominal the best is chosen for the optimization process to achieve optimum adhesion strength. In addition, the thermal improvements of the coating as compared to conventional polymer insulator on the battery are further investigated. - Highlights: • We studied the Boron Nitride coating on battery casing using Taguchi method. • We investigated the effect of surface roughness and coating thickness on adhesion strength. • We compared the effect of coating and polymer insulator in heat transfer. • The Boron Nitride coating could enhance the thermal management of the battery

Ion energy/momentum effects during ion assisted growth of niobium nitride films

Science.gov (United States)

Klingenberg, Melissa L.

The research described herein was performed to better understand and discern ion energy vs. ion momentum effects during ion beam assisted (IBAD) film growth and their effects on residual stress, crystalline structure, morphology, and composition, which influence film tribological properties. NbxN y was chosen for this research because it is a refractory material that can possess a large number of crystalline structures, and it has been found to have good tribological properties. To separate the effects of momentum transfer per arriving atom (p/a), which considers bombarding species mass, energy, and ion-to-atom transport ratio, from those of energy deposition per arriving atom (E/a), a mass independent parameter, different inert ion beams (krypton, argon, and neon) were used to create a matrix of coatings formed using similar energy deposition, but different momentum transfer and vice versa. Deposition was conducted in a research-scale IBAD system using electron beam evaporation, a radio frequency ion source, and a neutral nitrogen gas backfill. Films were characterized using x-ray diffraction, atomic force microscopy, Rutherford backscattering spectrometry, and residual stress analysis. Direct and quantifiable effects of bombardment were observed; however, energy deposition and momentum transfer effects could not be completely separated, confirming that thin film processes are complex. Complexities arose from ion-specific interactions (ion size, recoil energy, per cent reflected neutrals, Penning ionization, etc.) and chemistry effects that are not considered by the simple models. Overall, it can be stated that bombardment promoted nitride formation, nanocrystallinity, and compressive stress formation; influenced morphology (which influenced post-deposition oxygen uptake) and stress evolution; increased lattice parameter; modified crystalline phase and texture; and led to inert gas incorporation. High stress levels correlated strongly with material disorder and

High temperature solution-nitriding and low-temperature nitriding of AISI 316: Effect on pitting potential and crevice corrosion performance

DEFF Research Database (Denmark)

Bottoli, Federico; Jellesen, Morten Stendahl; Christiansen, Thomas Lundin

2018-01-01

in a 0.1M NaCl solution and crevice corrosion immersion tests in 3wt% FeCl3 solution were studied before and after the bulk and surface treatments.Nitrogen addition in the bulk proved to have a beneficial effect on the pitting resistance of the alloy. The formation of a zone of expanded austenite...... at the material surface through low-temperature nitriding resulted in a considerable improvement of the pitting potential and the crevice corrosion performance of the steels....

Ion nitriding post-oxidation as an alternative technique to electrolytic chromium; Nitruracion post-oxidacion ionica como tecnica alternativa al cromado electrolitico

Energy Technology Data Exchange (ETDEWEB)

Diaz-Guillen, J. C.; Granda-Gutierrez, E.E.; Campa-Castilla, A.; Perez-Aguilar, S.I.; Garza-Gomez, A.; Candelas-Ramirez, J.; Mendez-Mendez, R. [COMIMSA. Corporacion Mexicana de Investigacion en Materiales S.A. de C.V., Saltillo, Coahuila (Mexico)]. E-mail: jcarlos@comimsa.com

2010-11-15

The effect of temperature and processing time during post-oxidation on hardness and corrosion resistance of AISI 1045 samples treated through nitriding and post-oxidation in a pulsed plasma discharge is evaluated in this paper. Also, a comparative analysis of the mechanical properties obtained with the dual nitriding - post oxidation process versus those properties of typical hard chrome coatings was performed with an aim to propose an alternative technique to the processes of galvanic coatings. The latter revealed that the process of ion nitriding and post-oxidation provides similar properties in hardness and improves the corrosion resistance compared to the hard chrome case. It is conclude that the technique of ion nitriding and post-oxidation is a non environmental harmful technology with strong potential to replace highly polluting electroplating techniques for application of hard chrome coatings. [Spanish] En el presente trabajo se evalua el efecto del tiempo y la temperatura de post-oxidacion sobre las propiedades de dureza y resistencia a la corrosion de muestras de acero AISI 1045 sometido al proceso de nitruracion post-oxidacion ionica en plasmas pulsados. Asi mismo, con el objetivo de fundamentar la propuesta de utilizacion de la nitruracion post-oxidacion ionica como una tecnica alternativa a los procesos galvanicos para aplicacion de recubrimientos de cromo duro, se realizo un analisis comparativo de propiedades, evidenciando que, mediante el proceso nitruracion postoxidacion ionica, es posible obtener caracteristicas similares en dureza y mejores en resistencia a la corrosion que las tipicas obtenidas para el cromo duro. Los resultados obtenidos permiten postular una tecnica que no dana al medio ambiente, como lo es la nitruracion post-oxidacion ionica, como candidata potencial para sustituir las tecnicas galvanicas altamente contaminantes para aplicacion de cromo duro.

Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

Science.gov (United States)

Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

2015-10-01

Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

Preparation of Boron Nitride Nanoparticles with Oxygen Doping and a Study of Their Room-Temperature Ferromagnetism.

Science.gov (United States)

Lu, Qing; Zhao, Qi; Yang, Tianye; Zhai, Chengbo; Wang, Dongxue; Zhang, Mingzhe

2018-04-18

In this work, oxygen-doped boron nitride nanoparticles with room-temperature ferromagnetism have been synthesized by a new, facile, and efficient method. There are no metal magnetic impurities in the nanoparticles analyzed by X-ray photoelectron spectroscopy. The boron nitride nanoparticles exhibit a parabolic shape with increase in the reaction time. The saturation magnetization value reaches a maximum of 0.2975 emu g -1 at 300 K when the reaction time is 12 h, indicating that the Curie temperature ( T C ) is higher than 300 K. Combined with first-principles calculation, the coupling between B 2p orbital, N 2p orbital, and O 2p orbital in the conduction bands is the main origin of room-temperature ferromagnetism and also proves that the magnetic moment changes according the oxygen-doping content change. Compared with other room temperature ferromagnetic semiconductors, boron nitride nanoparticles have widely potential applications in spintronic devices because of high temperature oxidation resistance and excellent chemical stability.

Irradiation temperature dependence of defect formation of nitrides (A1N and c-BN) during neutron irradiations

International Nuclear Information System (INIS)

Atobe, Kozo.; Okada, Moritami; Nakagawa, Masuo

2000-01-01

The nitrogen vacancy concentration in the more refractory nitrides (A1N and c-BN) is determined as a function of reactor fluence up to 5.2x10 17 thermal neutrons/cm 2 and a function of the irradiation temperature at 25, 50, 100, 150, 200, 250 K. It is found that there is no remarkable dependence of the defect formation in nitrides on the irradiation temperature. The production of damage in the nitrides is considerably different from that in oxides. From the irradiation experiments using thermal neutron irradiation field, it is suggested in reactor irradiation that the atomic displacements in the nitrides occur predominately from energetic particles of the nuclear reactions with thermal neutrons in addition to the elastic collisions by fast neutron

Influence of surface mechanical activation of the X40Cr13 steel on roughness after ion and gas nitriding

International Nuclear Information System (INIS)

Jasinski, J.; Wojtal, A.; Jeziorski, L.; Radecki, A.; Ucieklak, S.

2003-01-01

The article describes the problem of the thermal and mechanical activation of the surface of the X40Cr13 steel on the state of the ion and gas nitriding. in order to determine the nitriding influence and make the analysis of results, the steel was subjected to: soft annealing, hardening with subsequent tempering at T = 550 o C and also mechanical activation of the surface consisting in peripheral grinding with abrasive papers of the grain size 60, 360, 1000 and mechanical polishing. The main aim of this work was to establish the influence of different surface geometrical structure, depending on X40Cr13 steel structure, on the roughness profile after ion and gas nitriding. With regard to the above, the examinations of basic roughness parameters prior to and after thermochemical processes and the analysis of utilitarian usefulness of activations applied were carried out. (author)

Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

International Nuclear Information System (INIS)

Dante, Roberto C.; Sánchez-Arévalo, Francisco M.; Chamorro-Posada, Pedro; Vázquez-Cabo, José; Huerta, Lazaro; Lartundo-Rojas, Luis; Santoyo-Salazar, Jaime

2015-01-01

The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, the sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures

Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

Energy Technology Data Exchange (ETDEWEB)

Dante, Roberto C., E-mail: rcdante@yahoo.com [Facultad de Mecánica, Escuela Politécnica Nacional (EPN), Ladrón de Guevara E11-253, Quito (Ecuador); Sánchez-Arévalo, Francisco M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Chamorro-Posada, Pedro [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Vázquez-Cabo, José [Dpto. de Teoría de la Señal y Comunicaciones, Universidad de Vigo, ETSI Telecomunicación, Lagoas Marcosende s/n, Vigo (Spain); Huerta, Lazaro [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Lartundo-Rojas, Luis [Centro de Nanociencias y Micro y Nanotecnologías—IPN, Luis Enrique Erro s/n, U. Prof. Adolfo López Mateos, 07738 Ciudad de Mexico, Distrito Federal (Mexico); Santoyo-Salazar, Jaime [Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07360 (Mexico); and others

2015-03-15

The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, the sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures.

Optimization of energy and fluence of N{sub 2}{sup +} ions in the conversion of Al{sub 2}O{sub 3} surface into AlN at room temperature

Energy Technology Data Exchange (ETDEWEB)

Kumar, Praveen, E-mail: praiitr@gmail.com [Center for Nanoscience and Nanotechnology, Panjab University, Chandigarh 160014 (India); Devi, Pooja [Central Scientific Instruments Organization, Sector-30 C, Chandigarh 160030 (India); Kumar, Mahesh [Physics of Energy and Harvesting group, National Physical Laboratory, New Delhi 110012 (India); Shivaprasad, S.M. [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

2016-01-15

Graphical abstract: We present a systematic study of energetic N{sub 2}{sup +} ions (0.1–5 keV) interaction with clean c-plane Al{sub 2}O{sub 3} surface in situ in a UHV system equipped with X-ray Photoelectron Spectroscopy at room temperature. Results show that maximum thickness of surface is nitride by 5 keV N{sub 2}{sup +} ion with an optimal fluence of 1.5 × 10{sup 15} ions/cm{sup 2}. This modified surface can be used as a template for low defect III-nitrides growth, with enhanced lattice matching than on bare c-Al{sub 2}O{sub 3}. - Highlights: • A mechanism for the formation of AlN on Al{sub 2}O{sub 3}. • Investigation of optimal energy and fluence for energetic N{sub 2}{sup +} ions. • AlN formation at room temperature on Al{sub 2}O{sub 3}. - Abstract: The work presents a systematic study of energetic N{sub 2}{sup +} ion interaction with the clean Al{sub 2}O{sub 3} surface at room temperature. Energetic N{sub 2}{sup +} ions with energies ranging from 0.1 to 5 keV were bombarded onto the c-plane Al{sub 2}O{sub 3} surface in situ in a UHV system equipped with X-ray Photoelectron Spectroscopy. Survey scans and core level spectra of Al(2p), O(1s), N(1s) were recorded as a function of ion fluence. Survey scans of XPS are used for the compositional analysis, while deconvoluted core level spectra are used to identify the evolution of the chemical bonding. Energetic dependence of N{sub 2}{sup +} ions occupying interstitial and substitutional sites in Al{sub 2}O{sub 3} lattice are probed to follow the surface evolution. Results show that maximum thickness of surface is nitride by 5 keV N{sub 2}{sup +} ion with an optimal fluence of 1.5 × 10{sup 15} ions/cm{sup 2}. This modified surface can be used as a template for low defect III-nitrides growth, with enhanced lattice matching than on bare c-Al{sub 2}O{sub 3}.

Nitriding of AISI 4140 steel by a low energy broad ion source

International Nuclear Information System (INIS)

Ochoa, E. A.; Figueroa, C. A.; Alvarez, F.

2006-01-01

A comprehensive study of the thermochemical nitriding process of steel AISI 4140 by low energy ion implantation (Kaufmann cell) is reported. Different times of implantation were employed and the studied samples were characterized by x-ray diffraction, in situ photoemission electron spectroscopy, scanning electron microscopy, and hardness (nanoindentation) measurements. The linear relationship between nitrogen content and hardness was verified. The structure of the nitrided layer was characterized yielding that the compound layer is formed by coarse precipitates, around small grains, constituted principally by ε-Fe 2-3 N and γ-Fe 4 N phases and the diffusion zone is formed by fine precipitates, around big grains of the original martensitic phase, constituted principally by γ-Fe 4 N phase. Finally, a diffusion model for multiphase systems was applied to determine effective diffusion coefficients of nitrogen in the different phases

Nitride alloy layer formation of duplex stainless steel using nitriding process

Science.gov (United States)

Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

2018-01-01

Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

Compositional analysis of silicon oxide/silicon nitride thin films

Directory of Open Access Journals (Sweden)

Meziani Samir

2016-06-01

Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

Radio-frequency plasma nitriding and nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy

International Nuclear Information System (INIS)

Wang, S.Y.; Chu, P.K.; Tang, B.Y.; Zeng, X.C.; Wang, X.F.; Chen, Y.B.

1997-01-01

Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly developed inductively coupled RF plasma source which is responsible for the success of the experiments is also described. (orig.)

Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

International Nuclear Information System (INIS)

Shams, Q.A.

1988-01-01

Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing

The analysis of ion nitriding and nitrogen ion implantation on tribological properties of steels 33H3MF and 36H3M

International Nuclear Information System (INIS)

Zandecki, R.

1993-01-01

Surface properties of two kinds of steel 33H3MF and 36H3M have been investigated. Three different methods of steel surface treatment have been used: ion nitriding, nitrogen ion implantation and mixing method being the sum of the first and second ones. The microstructure, microhardness distribution, fatigue strength, friction coefficient and other tribological properties have been measured and compared. 60 refs, 74 figs, 19 tabs

The Influence Of Nitridation Temperature And Time On The Surface Hardness Of AISI 1010 Low Carbon Steels Nitrided By Means Of Plasma Glow Discharge Technique

International Nuclear Information System (INIS)

Sujitno, Tjipto; Mujiman, Supardjono

1996-01-01

The results of the influence of nitridation temperature and time on the surface hardness of AISI 1010 low carbon steels nitrided by means of plasma glow discharge technique are presented in this paper. The results are the changing of surface hardiness, the changing of surface microstructure and the penetration profile depth. The experiment has been carried out at the temperature 400 o C, 450 o C, 500 o C, 550 o C, 570 o C and 600 o C, whereas the time is 5 minutes, 15 minutes, 40 minutes, 90 minutes and 180 minutes. All the experiments have been carried out at the optimum plasma density condition. The optimum plasma density condition is achieved at the pressure of p = 0.2 torr, when thr gas flow of nitrogen is 0.6 liter/minute and the distance of electrode plate is 4.5 cm. It was found that the optimum hardness of the surface was achieved at the temperature of 570 o C and the time of nitridation was 90 minutes, i.e. 190 KHN

Formation of Wear Resistant Steel Surfaces by Plasma Immersion Ion Implantation

Science.gov (United States)

Mändl, S.; Rauschenbach, B.

2003-08-01

Plasma immersion ion implantation (PIII) is a versatile and fast method for implanting energetic ions into large and complex shaped three-dimensional objects where the ions are accelerated by applying negative high voltage pulses to a substrate immersed in a plasma. As the line-of-sight restrictions of conventional implanters are circumvented, it results in a fast and cost-effective technology. Implantation of nitrogen at 30 - 40 keV at moderate temperatures of 200 - 400 °C into steel circumvents the diminishing thermal nitrogen activation encountered, e.g., in plasma nitriding in this temperature regime, thus enabling nitriding of additional steel grades. Nitride formation and improvement of the mechanical properties after PIII are presented for several steel grades, including AISI 316Ti (food industry), AISI D2 (used for bending tools) and AISI 1095 (with applications in the textile industry).

Formation of Wear Resistant Steel Surfaces by Plasma Immersion Ion Implantation

International Nuclear Information System (INIS)

Maendl, S.; Rauschenbach, B.

2003-01-01

Plasma immersion ion implantation (PIII) is a versatile and fast method for implanting energetic ions into large and complex shaped three-dimensional objects where the ions are accelerated by applying negative high voltage pulses to a substrate immersed in a plasma. As the line-of-sight restrictions of conventional implanters are circumvented, it results in a fast and cost-effective technology. Implantation of nitrogen at 30 - 40 keV at moderate temperatures of 200 - 400 deg. C into steel circumvents the diminishing thermal nitrogen activation encountered, e.g., in plasma nitriding in this temperature regime, thus enabling nitriding of additional steel grades. Nitride formation and improvement of the mechanical properties after PIII are presented for several steel grades, including AISI 316Ti (food industry), AISI D2 (used for bending tools) and AISI 1095 (with applications in the textile industry)

Deposition of carbon nitride films by vacuum ion diode with explosive emission

Energy Technology Data Exchange (ETDEWEB)

Korenev, S.A.; Perry, A.J. [New Jersey Inst. of Tech., Newark (United States); Elkind, A.; Kalmukov, A.

1997-10-31

Carbon nitride films were synthesized using a novel technique based on the pulsed high voltage ion/electron diode with explosive emission (pulsed voltage 200-700 kV pulsed current 100-500 Acm{sup -2} (ions) 150-2000 Acm{sup -2} (electrons)). The method and its novel features are discussed as well as its application to the formation of the crystalline {beta}-phase in C{sub 3}N{sub 4} films. Mixed elemental nitrogen and carbon films are formed by sequential deposition then subjected to ion and/or electron beam mixing to synthesize the C{sub 3}N{sub 4} structure. The experimental conditions used for this pulsed process are described and the efficiency of the method for nitrogen incorporation is demonstrated. The results presented indicate that {beta}-C{sub 3}N{sub 4} crystallites are formed in an amorphous matrix. (orig.) 20 refs.

The relationship of microstructure and temperature to fracture mechanics parameters in reaction bonded silicon nitride

International Nuclear Information System (INIS)

Jennings, H.M.; Dalgleish, B.J.; Pratt, P.L.

1978-01-01

The development of physical properties in reaction bonded silicon nitride has been investigated over a range of temperatures and correlated with microstructure. Fracture mechanics parameters, elastic moduli, strength and critical defect size have been determined. The nitrided microstructure is shown to be directly related to these observed properties and these basic relationships can be used to produce material with improved properties. (orig.) [de

Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers

Energy Technology Data Exchange (ETDEWEB)

Baranowski, M.; Misiewicz, J. [Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland)

2015-10-21

We report theoretical studies of spin polarization dynamics in dilute nitride semiconductors. We develop a commonly used rate equation model [Lagarde et al., Phys. Status Solidi A 204, 208 (2007) and Kunold et al. Phys. Rev. B 83, 165202 (2011)] to take into account the influence of shallow localizing states on the temperature dependence of spin polarization dynamics and a spin filtering effect. Presented investigations show that the experimentally observed temperature dependence of a spin polarization lifetime in dilute nitrides can be related to the electron capture process by shallow localizing states without paramagnetic properties. This process reduces the efficiency of spin filtering effect by deep paramagnetic centers, especially at low temperatures.

Mechanisms of hydrogen retention in metallic beryllium and beryllium oxide and properties of ion-induced beryllium nitride

International Nuclear Information System (INIS)

Oberkofler, Martin

2011-01-01

In the framework of this thesis laboratory experiments on atomically clean beryllium surfaces were performed. They aim at a basic understanding of the mechanisms occurring upon interaction of a fusion plasma with a beryllium first wall. The retention and the temperature dependent release of implanted deuterium ions are investigated. An atomistic description is developed through simulations and through the comparison with calculations based on density functional theory. The results of these investigations are compared to the behaviour of hydrogen upon implantation into thermally grown beryllium oxide layers. Furthermore, beryllium nitride is produced by implantation of nitrogen into metallic beryllium and its properties are investigated. The results are interpreted with regard to the use of beryllium in a fusion reactor. (orig.)

Ion implantation and annealing studies in III-V nitrides

International Nuclear Information System (INIS)

Zolper, J.C.; Pearton, S.J.

1996-01-01

Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n + -surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10 16 cm -2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material

Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Stroescu, H.; Gartner, M.; Anastasescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Fogarassy, Zs. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege Miklos u. 29-33, H-1121 Budapest (Hungary); Mihailescu, N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A., E-mail: szekeres@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Bakalova, S. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania)

2016-06-30

Highlights: • Multi-stage pulsed laser deposition of aluminum nitride at different temperatures. • 800 °C seed film boosts the next growth of crystalline structures at lower temperature. • Two-stage deposited AlN samples exhibit randomly oriented wurtzite structures. • Band gap energy values increase with deposition temperature. • Correlation was observed between single- and multi-stage AlN films. - Abstract: We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN “seed” layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4–2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0–5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

Magnesium nitride phase formation by means of ion beam implantation technique

International Nuclear Information System (INIS)

Hoeche, Daniel; Blawert, Carsten; Cavellier, Matthieu; Busardo, Denis; Gloriant, Thierry

2011-01-01

Nitrogen implantation technique (Hardion + ) has been applied in order to modify the surface properties of magnesium and Mg-based alloys (AM50, AZ31). Nitrogen ions with an energy of approximately 100 keV were used to form the Mg 3 N 2 phase leading to improved surface properties. The samples were investigated using various characterization methods. Mechanical properties have been tested by means of nanoindention, the electrochemical behavior was measured by potentiodynamic polarization and impedance spectroscopy, phase formation by using grazing incidence Xray diffraction, the chemical state was determined by means of Xray induced photoelectron spectroscopy (XPS) and depth profiling by using secondary ions mass spectroscopy (SIMS). Additionally, the results were compared to calculated depth profiles using SRIM2008. The correlation of the results shows the nitride formation behavior to a depth of about 600 nm.

Corrosion resistance of a magnetic stainless steel ion-plated with titanium nitride.

Science.gov (United States)

Hai, K; Sawase, T; Matsumura, H; Atsuta, M; Baba, K; Hatada, R

2000-04-01

This in vitro study evaluated the corrosion resistance of a titanium nitride (TiN) ion-plated magnetic stainless steel (447J1) for the purpose of applying a magnetic attachment system to implant-supported prostheses made of titanium. The surface hardness of the TiN ion-plated 447J1 alloy with varying TiN thickness was determined prior to the corrosion testing, and 2 micrometers thickness was confirmed to be appropriate. Ions released from the 447J1 alloy, TiN ion-plated 447J1 alloy, and titanium into a 2% lactic acid aqueous solution and 0.1 mol/L phosphate buffered saline (PBS) were determined by means of an inductively coupled plasma atomic emission spectroscopy (ICP-AES). Long-term corrosion behaviour was evaluated using a multisweep cyclic voltammetry. The ICP-AES results revealed that the 447J1 alloy released ferric ions into both media, and that the amount of released ions increased when the alloy was coupled with titanium. Although both titanium and the TiN-plated 447J1 alloy released titanium ions into lactic acid solution, ferric and chromium ions were not released from the alloy specimen for all conditions. Cyclic voltamograms indicated that the long-term corrosion resistance of the 447J1 alloy was considerably improved by ion-plating with TiN.

Ion-induced stress relaxation during the growth of cubic boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Abendroth, B.E.

2004-08-01

in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

Influence of Plastic Deformation on Low Temperature Surface Hardening of Austenitic Stainless Steel by Gaseous Nitriding

DEFF Research Database (Denmark)

Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

2015-01-01

This article addresses an investigation of the influence of plastic deformation on low temperature surface hardening by gaseous nitriding of two commercial austenitic stainless steels: AISI 304 and EN 1.4369. The materials were plastically deformed to different equivalent strains by uniaxial...... demonstrate that a case of expanded austenite develops and that, in particular, strain-induced martensite has a large influence on the nitrided zone....

Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors

Science.gov (United States)

Patterson, Richard L.; Boomer, Kristen T.; Scheick, Leif; Lauenstein, Jean-Marie; Casey, Megan; Hammoud, Ahmad

2014-01-01

The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.

Characterization of plasma nitrided layers produced on sintered iron

Directory of Open Access Journals (Sweden)

Marcos Alves Fontes

2014-07-01

Full Text Available Plasma nitriding is a thermo-physical-chemical treatment process, which promotes surface hardening, caused by interstitial diffusion of atomic nitrogen into metallic alloys. In this work, this process was employed in the surface modification of a sintered ferrous alloy. Scanning electron microscopy (SEM, X-ray diffraction (XRD analyses, and wear and microhardness tests were performed on the samples submitted to ferrox treatment and plasma nitriding carried out under different conditions of time and temperature. The results showed that the nitride layer thickness is higher for all nitrided samples than for ferrox treated samples, and this layer thickness increases with nitriding time and temperature, and temperature is a more significant variable. The XRD analysis showed that the nitrided layer, for all samples, near the surface consists in a mixture of γ′-Fe4N and ɛ-Fe3N phases. Both wear resistance and microhardness increase with nitriding time and temperature, and temperature influences both the characteristics the most.

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

Science.gov (United States)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

XPS analysis for cubic boron nitride crystal synthesized under high pressure and high temperature using Li3N as catalysis

International Nuclear Information System (INIS)

Guo, Xiaofei; Xu, Bin; Zhang, Wen; Cai, Zhichao; Wen, Zhenxing

2014-01-01

Highlights: • The cBN was synthesized by Li 3 N as catalyst under high pressure and high temperature (HPHT). • The film coated on the as-grown cBN crystals was studied by XPS. • The electronic structure variation in the film was investigated. • The growth mechanism of cubic boron nitride crystal was analyzed briefly. - Abstract: Cubic boron nitride (cBN) single crystals are synthesized with lithium nitride (Li3N) as catalyst under high pressure and high temperature. The variation of electronic structures from boron nitride of different layers in coating film on the cBN single crystal has been investigated by X-ray photoelectron spectroscopy. Combining the atomic concentration analysis, it was shown that from the film/cBN crystal interface to the inner, the sp 2 fractions are decreasing, and the sp 3 fractions are increasing in the film at the same time. Moreover, by transmission electron microscopy, a lot of cBN microparticles are found in the interface. For there is no Li 3 N in the film, it is possible that Li 3 N first reacts with hexagonal boron nitride to produce Li 3 BN 2 during cBN crystals synthesis under high pressure and high temperature (HPHT). Boron and nitrogen atoms, required for cBN crystals growth, could come from the direct conversion from hexagonal boron nitride with the catalysis of Li 3 BN 2 under high pressure and high temperature, but not directly from the decomposition of Li 3 BN 2

Comparative study involving the uranium determination through catalytic reduction of nitrates and nitrides by using decoupled plasma nitridation (DPN)

International Nuclear Information System (INIS)

Aguiar, Marco Antonio Souza; Gutz, Ivano G. Rolf

1999-01-01

This paper reports a comparative study on the determination of uranium through the catalytic reduction of nitrate and nitride using the decoupled plasma nitridation. The uranyl ions are a good catalyst for the reduction of NO - 3 and NO - 2 ions on the surface of a hanging drop mercury electrode (HDME). The presence of NO - in a solution with p H = 3 presented a catalytic signal more intense than the signal obtained with NO - 3 (concentration ten times higher). A detection limit of 1x10 9 M was obtained using the technique of decoupled plasma nitridation (DPN), suggesting the development of a sensitive way for the determination of uranium in different matrixes

Mechanical and tribological properties of silicon nitride films synthesized by ion beam enhanced deposition

International Nuclear Information System (INIS)

Chen Yuanru; Li Shizhuo; Zhang Xushou; Liu Hong; Yang Genqing; Qu Baochun

1991-01-01

This article describes preliminary investigations of mechanical and tribological properties of silicon nitride film formed by ion beam enhanced deposition (IBED) on GH37 (Ni-based alloys) steel. The films were synthesized by silicon vapor deposition with a rate of 1 A/s and by 40 keV nitrogen ion bombardment simultaneously. The thickness of the film was about 5000 A. X-ray photoelectron spectroscopy and infrared absorption spectroscopy revealed that a stoichiometric Si 3 N 4 film was formed. The observation of TEM showed that the IBED Si 3 N 4 film normally had an amorphous structure. However, electron diffraction patterns revealed a certain crystallinity. The mechanical and tribological properties of the films were investigated with a scratch tester, microhardness meter, and a ball-on-disc tribometer respectively. Results show that the adhesive strength between film and substrate is about 51 N, the Vickers microhardness with a load of 0.2 N is 980, the friction coefficient measured for steel against silicon nitride film ranges from 0.1 to 0.15, and the wear rate of coatings is about 6.8x10 -5 mm 3 /(mN). Finally, the relationship among thermal annealing, crystallinity and tribological characteristics of the Si 3 N 4 film is discussed. (orig.)

Radio frequency plasma nitriding of aluminium at higher power levels

International Nuclear Information System (INIS)

Gredelj, Sabina; Kumar, Sunil; Gerson, Andrea R.; Cavallaro, Giuseppe P.

2006-01-01

Nitriding of aluminium 2011 using a radio frequency plasma at higher power levels (500 and 700 W) and lower substrate temperature (500 deg. C) resulted in higher AlN/Al 2 O 3 ratios than obtained at 100 W and 575 deg. C. AlN/Al 2 O 3 ratios derived from X-ray photoelectron spectroscopic analysis (and corroborated by heavy ion elastic recoil time of flight spectrometry) for treatments preformed at 100 (575 deg. C), 500 (500 deg. C) and 700 W (500 deg. C) were 1.0, 1.5 and 3.3, respectively. Scanning electron microscopy revealed that plasma nitrided surfaces obtained at higher power levels exhibited much finer nodular morphology than obtained at 100 W

An Amorphous Carbon Nitride Composite Derived from ZIF-8 as Anode Material for Sodium-Ion Batteries.

Science.gov (United States)

Fan, Jing-Min; Chen, Jia-Jia; Zhang, Qian; Chen, Bin-Bin; Zang, Jun; Zheng, Ming-Sen; Dong, Quan-Feng

2015-06-08

An composite comprising amorphous carbon nitride (ACN) and zinc oxide is derived from ZIF-8 by pyrolysis. The composite is a promising anode material for sodium-ion batteries. The nitrogen content of the ACN composite is as high as 20.4 %, and the bonding state of nitrogen is mostly pyridinic, as determined by X-ray photoelectron spectroscopy (XPS). The composite exhibits an excellent Na(+) storage performance with a reversible capacity of 430 mA h g(-1) and 146 mA h g(-1) at current densities of 83 mA g(-1) and 8.33 A g(-1) , respectively. A specific capacity of 175 mA h g(-1) was maintained after 2000 cycles at 1.67 A g(-1) , with only 0.016 % capacity degradation per cycle. Moreover, an accelerating rate calorimetry (ARC) test demonstrates the excellent thermal stability of the composite, with a low self heating rate and high onset temperature (210 °C). These results shows its promise as a candidate material for high-capacity, high-rate anodes for sodium-ion batteries. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modelling the evolution of composition-and stress-depth profiles in austenitic stainless steels during low-temperature nitriding

DEFF Research Database (Denmark)

Jespersen, Freja Nygaard; Hattel, Jesper Henri; Somers, Marcel A. J.

2016-01-01

. In the present paper solid mechanics was combined with thermodynamics and diffusion kinetics to simulate the evolution of composition-depth and stress-depth profiles resulting from nitriding. The model takes into account a composition-dependent diffusion coefficient of nitrogen in expanded austenite, short range......Nitriding of stainless steel causes a surface zone of expanded austenite, which improves the wear resistance of the stainless steel while preserving the stainless behaviour. During nitriding huge residual stresses are introduced in the treated zone, arising from the volume expansion...... that accompanies the dissolution of high nitrogen contents in expanded austenite. An intriguing phenomenon during low-temperature nitriding is that the residual stresses evoked by dissolution of nitrogen in the solid state, affect the thermodynamics and the diffusion kinetics of nitrogen dissolution...

Effect of Plasma Nitriding Process Conditions on Corrosion Resistance of 440B Martensitic Stainless Steel

Directory of Open Access Journals (Sweden)

Łępicka Magdalena

2014-09-01

Full Text Available Martensitic stainless steels are used in a large number of various industrial applications, e.g. molds for plastic injections and glass moldings, automotive components, cutting tools, surgical and dental instruments. The improvement of their tribological and corrosion properties is a problem of high interest especially in medical applications, where patient safety becomes a priority. The paper covers findings from plasma nitrided AISI 440B (PN-EN or DIN X90CrMoV18 stainless steel corrosion resistance studies. Conventionally heat treated and plasma nitrided in N2:H2 reaction gas mixture (50:50, 65:35 and 80:20, respectively in two different temperature ranges (380 or 450°C specimens groups were examined. Microscopic observations and electrochemical corrosion tests were performed using a variety of analytical techniques. As obtained findings show, plasma nitriding of AISI 440B stainless steel, regardless of the process temperature, results in reduction of corrosion current density. Nevertheless, applying thermo-chemical process which requires exceeding temperature of about 400°C is not recommended due to increased risk of steel sensitization to intergranular and stress corrosion. According to the results, material ion nitrided in 450°C underwent leaching corrosion processes, which led to significant disproportion in chemical composition of the corroded and corrosion-free areas. The authors suggest further research into corrosion process of plasma nitrided materials and its degradation products.

Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

International Nuclear Information System (INIS)

Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R.; Restrepo-Parra, E.; Arango, P.J.

2010-01-01

Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T room ), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I D /I G or sp 3 /sp 2 ratio and not by the absolute sp 3 or sp 2 concentration.

Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

Science.gov (United States)

Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

1983-01-01

A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

Influence of plastic deformation on low temperature surface hardening of stainless steel by gaseous nitriding

DEFF Research Database (Denmark)

Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

2015-01-01

This article addresses an investigation of the influence of plastic deformation on low temperature surface hardening by gaseous nitriding of three commercial austenitic stainless steels: AISI 304, EN 1.4369 and Sandvik Nanoflex® with various degrees of austenite stability. The materials were...... analysis, reflected light microscopy and microhardness indentation. The results demonstrate that a case of expanded austenite develops and that, in particular, the presence of strain-induced martensite in the initial (deformed) microstructure has a large influence on the nitrided zone....

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.; Vasiliev, V. K.; Guseinov, D. V.; Okulich, E. V. [Nizhny Novgorod State University (Russian Federation); Shemukhin, A. A. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation); Surodin, S. I.; Nikolitchev, D. E.; Nezhdanov, A. V.; Pirogov, A. V.; Pavlov, D. A.; Tetelbaum, D. I., E-mail: tetelbaum@phys.unn.ru [Nizhny Novgorod State University (Russian Federation)

2016-02-15

The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

Evidence for atomic scale disorder in indium nitride from perturbed angular correlation spectroscopy

International Nuclear Information System (INIS)

Dogra, R; Shrestha, S K; Byrne, A P; Ridgway, M C; Edge, A V J; Vianden, R; Penner, J; Timmers, H

2005-01-01

The crystal lattice of bulk grains and state-of-the-art films of indium nitride was investigated at the atomic scale with perturbed angular correlation spectroscopy using the 111 In/Cd radioisotope probe. The probe was introduced during sample synthesis, by diffusion and by ion implantation. The mean quadrupole interaction frequency ν Q = 28 MHz was observed at the indium probe site in all types of indium nitride samples with broad frequency distributions. The observed small, but non-zero, asymmetry parameter indicates broken symmetry around the probe atoms. Results have been compared with theoretical calculations based on the point charge model. The consistency of the experimental results and their independence of the preparation technique suggest that the origin of the broad frequency distribution is inherent to indium nitride, indicating a high degree of disorder at the atomic scale. Due to the low dissociation temperature of indium nitride, furnace and rapid thermal annealing at atmospheric pressure reduce the lattice disorder only marginally

Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

DEFF Research Database (Denmark)

Mattsson, Kent Erik

1995-01-01

Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found......-product. A model, that combine the chemical net reaction and the stoichiometric rules, is found to agree with measured deposition rates for given material compositions. Effects of annealing in a nitrogen atmosphere has been investigated for the 400 °C– 1100 °C temperature range. It is observed that PECVD oxy...

Hot pressing of uranium nitride and mixed uranium plutonium nitride

International Nuclear Information System (INIS)

Chang, J.Y.

1975-01-01

The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

Energy Technology Data Exchange (ETDEWEB)

Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia)

2010-10-01

Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T{sub room}), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 {+-} 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I{sub D}/I{sub G} or sp{sup 3}/sp{sup 2} ratio and not by the absolute sp{sup 3} or sp{sup 2} concentration.

Corrosion of silicon nitride in high temperature alkaline solutions

Energy Technology Data Exchange (ETDEWEB)

Qiu, Liyan, E-mail: liyan.qiu@cnl.ca; Guzonas, Dave A.; Qian, Jing

2016-08-01

The corrosion of silicon nitride (Si{sub 3}N{sub 4}) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si{sub 3}N{sub 4} experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

Review about laser nitriding of titanium alloys; Revision sobre nitruraciones laser de aleaciones de titanio

Energy Technology Data Exchange (ETDEWEB)

Perez-Artieda, M.G.; Fernandez-Carrasquilla, J.

2010-07-01

A common technique used to improve the wear response of titanium alloys is to nitride the surface, using chemical or physical vapour deposition, ion implantation or surface remelting in a nitrogen atmosphere. In this revision nitriding systems with laser technology are studied, used in titanium alloys surface treatments.For high temperature, high strength applications, titanium based alloys are an attractive light-weight alternative to steel, due to their high strength to weight ratio and corrosion resistance. In applications that require good wear resistance, titanium alloys pose a problem due to their poor tribological characteristics.Titanium alloys used with a suitable nitriding treatment could allow the replacement of steel in different applications, obtaining weight savings in fabricated components. (Author). 68 refs.

Method for producing polycrystalline boron nitride

International Nuclear Information System (INIS)

Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

1975-01-01

A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

Friction and wear behaviour of ion beam modified ceramics

Science.gov (United States)

Lankford, J.; Wei, W.; Kossowsky, R.

1987-01-01

In the present study, the sliding friction coefficients and wear rates of carbide, oxide, and nitride materials for potential use as sliding seals (ring/liner) were measured under temperature, environmental, velocity, and loading conditions representative of a diesel engine. In addition, silicon nitride and partially stabilized zirconia discs were modified by ion mixing with TiNi, nickel, cobalt and chromium, and subsequently run against carbide pins, with the objective of producing reduced friction via solid lubrication at elevated temperature. Unmodified ceramic sliding couples were characterized at all temperatures by friction coefficients of 0.24 and above. However, the coefficient at 800 C in an oxidizing environment was reduced to below 0.1, for certain material combinations, by the ion implantation of TiNi or cobalt. This beneficial effect was found to derive from lubricious titanium, nickel, and cobalt oxides.

Ion implantation and ion assisted coatings for wear resistance in metals

International Nuclear Information System (INIS)

Dearnaley, G.

1986-01-01

The implantation of electrically accelerated ions of chosen elements into the surface of material provides a method for improving surface properties such as wear resistance. High concentrations of nitrogen implanted into metals create obstacles to dislocation movement, and certain combinations of metallic and non-metallic species will also strengthen the surface. The process is best applied to situations involving mild abrasive wear and operating temperatures that are not too high. Some dramatic increases in life have been reported under such favourable conditions. A more recent development has been the combination of a thin coating with reactive ion bombardment designed to enhance adhesion by ion mixing at the interface and so provide hardness by the formation of finely dispersed nitrides, including cubic boron nitride. These coatings often possess vivid and decorative colours as an added benefit. Developments in the equipment for industrial ion implantation now offer more attractive costs per unit area and a potentially greater throughput of work. A versatile group of related hard vacuum treatments is now emerging, involving the use of intense beams of nitrogen ions for the purpose of tailoring metal surfaces to resist wear. (author)

Neutron ion temperature measurement

International Nuclear Information System (INIS)

Strachan, J.D.; Hendel, H.W.; Lovberg, J.; Nieschmidt, E.B.

1986-11-01

One important use of fusion product diagnostics is in the determination of the deuterium ion temperature from the magnitude of the 2.5 MeV d(d,n) 3 He neutron emission. The detectors, calibration methods, and limitations of this technique are reviewed here with emphasis on procedures used at PPPL. In most tokamaks, the ion temperature deduced from neutrons is in reasonable agreement with the ion temperature deduced by other techniques

The Influence of Hot-Rolled Temperature on Plasma Nitriding Behavior of Iron-Based Alloys

Science.gov (United States)

El-Hossary, F. M.; Khalil, S. M.; Lotfy, Kh.; Kassem, M. A.

2009-07-01

Experiments were performed with an aim of studying the effect of hot-rolled temperature (600 and 900°C) on radio frequency (rf) plasma nitriding of Fe93Ni4Zr3 alloy. Nitriding was carried out for 10 min in a nitrogen atmosphere at a base pressure of 10-2 mbarr. Different continuous plasma processing powers of 300-550 W in steps 50 W or less were applied. Nitrided hot-rolled specimens were characterized by optical microscopy (OM), X-ray diffraction (XRD) and microhardness measurements. The results reveal that the surface of hot-rolled rf plasma nitrided specimens at 600°C is characterized with a fine microstructure as a result of the high nitrogen solubility and diffusivity. Moreover, the hot-rolled treated samples at 600°C exhibit higher microhardness value than the associated values of hot-rolled treated samples at 900°C. The enhancement of microhardness is due to precipitation and predominance of new phases ( γ and ɛ phases). Mainly, this conclusion has been attributed to the high defect densities and small grain sizes of the samples hot-rolled at 600°C. Generally, the refinement of grain size plays a dramatic role in improvement of mechanical properties of tested samples.

Synthesis of carbon nitride powder by selective etching of TiC0.3N0.7 in chlorine-containing atmosphere at moderate temperature

International Nuclear Information System (INIS)

Sui Jian; Lu Jinjun

2010-01-01

We reported the synthesis of carbon nitride powder by extracting titanium from single inorganic precursor TiC 0.3 N 0.7 in chlorine-containing atmosphere at ambient pressure and temperature not exceeding 500 deg. C. The TiC 0.3 N 0.7 crystalline structure acted as a template, supplying active carbon and nitrogen atoms for carbon nitride when it was destroyed in chlorination. X-ray diffraction data showed that the obtained carbon nitride powders were amorphous, which was in good agreement with transmission electron microscope analysis. The composition and structure of carbon nitride powders were analyzed by employing Fourier transform infrared spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Results indicated that disorder structure was most likely for the carbon nitride powders and the N content depended greatly on the chlorination temperature. Thermal analysis in flowing N 2 indicated that the mass loss started from 300 deg. C and the complete decomposition occurred at around 650 deg. C, confirming the low thermal stability of the carbon nitride material.

Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

Energy Technology Data Exchange (ETDEWEB)

Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

2016-08-15

Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

The stopping power and energy straggling of heavy ions in silicon nitride and polypropylene

Energy Technology Data Exchange (ETDEWEB)

Mikšová, R., E-mail: miksova@ujf.cas.cz [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Department of Physics, Faculty of Science, J. E. Purkinje University, Ceske Mladeze 8, 400 96 Usti nad Labem (Czech Republic); Hnatowicz, V. [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Macková, A.; Malinský, P. [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Department of Physics, Faculty of Science, J. E. Purkinje University, Ceske Mladeze 8, 400 96 Usti nad Labem (Czech Republic); Slepička, P. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

2015-07-01

The stopping power and energy straggling of {sup 12}C{sup 3+} and {sup 16}O{sup 3+} ions with energies between 4.5 and 7.8 MeV in a 0.166-μm-thin silicon nitride and in 4-μm-thin polypropylene foils were measured by means of an indirect transmission method using a half-covered PIPS detector. Ions scattered from a thin gold layer under a scattering angle of 150° were used. The energy spectra of back-scattered and decelerated ions were registered and evaluated simultaneously. The measured stopping powers were compared with the theoretical predictions simulated by SRIM-2008 and MSTAR codes. SRIM prediction of energy stopping is reasonably close to the experimentally obtained values comparing to MSTAR values. Better agreement between experimental and predicted data was observed for C{sup 3+} ion energy losses comparing to O{sup 3+} ions. The experimental data from Paul’s database and our previous experimental data were also discussed. The obtained experimental energy-straggling data were compared to those calculated by using Bohr’s, Yang’s models etc. The predictions by Yang are in good agreement with our experiment within a frame of uncertainty of 25%.

The stopping power and energy straggling of heavy ions in silicon nitride and polypropylene

International Nuclear Information System (INIS)

Mikšová, R.; Hnatowicz, V.; Macková, A.; Malinský, P.; Slepička, P.

2015-01-01

The stopping power and energy straggling of 12 C 3+ and 16 O 3+ ions with energies between 4.5 and 7.8 MeV in a 0.166-μm-thin silicon nitride and in 4-μm-thin polypropylene foils were measured by means of an indirect transmission method using a half-covered PIPS detector. Ions scattered from a thin gold layer under a scattering angle of 150° were used. The energy spectra of back-scattered and decelerated ions were registered and evaluated simultaneously. The measured stopping powers were compared with the theoretical predictions simulated by SRIM-2008 and MSTAR codes. SRIM prediction of energy stopping is reasonably close to the experimentally obtained values comparing to MSTAR values. Better agreement between experimental and predicted data was observed for C 3+ ion energy losses comparing to O 3+ ions. The experimental data from Paul’s database and our previous experimental data were also discussed. The obtained experimental energy-straggling data were compared to those calculated by using Bohr’s, Yang’s models etc. The predictions by Yang are in good agreement with our experiment within a frame of uncertainty of 25%

Surface modification of titanium by plasma nitriding

Directory of Open Access Journals (Sweden)

Kapczinski Myriam Pereira

2003-01-01

Full Text Available A systematic investigation was undertaken on commercially pure titanium submitted to plasma nitriding. Thirteen different sets of operational parameters (nitriding time, sample temperature and plasma atmosphere were used. Surface analyses were performed using X-ray diffraction, nuclear reaction and scanning electron microscopy. Wear tests were done with stainless steel Gracey scaler, sonic apparatus and pin-on-disc machine. The obtained results indicate that the tribological performance can be improved for samples treated with the following conditions: nitriding time of 3 h; plasma atmosphere consisting of 80%N2+20%H2 or 20%N2+80%H2; sample temperature during nitriding of 600 or 800 degreesC.

Effective Duration of Gas Nitriding Process on AISI 316L for the Formation of a Desired Thickness of Surface Nitrided Layer

Directory of Open Access Journals (Sweden)

Mahmoud Hassan R. S.

2014-07-01

Full Text Available High temperature gas nitriding performed on AISI 316L at the temperature of 1200°C. The microstructure of treated AISI 316L samples were observed to identify the formation of the microstructure of nitrided surface layer. The grain size of austenite tends to be enlarged when the nitriding time increases, but the austenite single phase structure is maintained even after the long-time solution nitriding. Using microhardness testing, the hardness values drop to the center of the samples. The increase in surface hardness is due to the high nitrogen concentration at or near the surface. At 245HV, the graph of the effective duration of nitriding process was plotted to achieve the maximum depth of nitrogen diffuse under the surface. Using Sigma Plot software best fit lines of the experimental result found and plotted to find out effective duration of nitriding equation as Y=1.9491(1-0.7947x, where Y is the thickness of nitrided layer below the surface and X is duration of nitriding process. Based on this equation, the duration of gas nitriding process can be estimated to produce desired thickness of nitrided layer.

Influence of temperature on properties of nitrogen plasma source ion implantation (N-PSII) of Ti6A14V alloy

CERN Document Server

Geng Man; Zhao Qing

2001-01-01

Specimens of Ti6Al4V alloy were implanted with nitrogen plasma source ion implantation (N-PSII) at temperatures between 100 degree C and 600 degree C to a ion dose of 4 x 10 sup 1 sup 7 cm sup - sup 2. Auger Electron Spectroscopy (AES) was used to determine the nitrogen concentration depth profiles. Microhardness measurements and pin-on-disk wear test were performed to evaluate the improvements of the surface modification. Glancing angle X-ray diffraction (XRD) was employed to determine the phases presented in the surface modified layer. The thickness of implanted layer increased by about an order of magnitude when the temperature was elevated from 100 degree C to 600 degree C. Higher surface hardness and wear resistance was also obtained at higher temperature. Scanning electron microscopy (SEM) showed distinct microstructural changes and the presence of titanium nitrides in the implanted surface

The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

Energy Technology Data Exchange (ETDEWEB)

Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

2014-11-15

Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

Preparation and characteristics of various rare earth nitrides

International Nuclear Information System (INIS)

Imamura, H.; Imahashi, T.; Zaimi, M.; Sakata, Y.

2008-01-01

Active nanocrystalline nitrides of EuN and YbN with high surface areas were successfully prepared by the thermal decomposition of the rare earth amides (Eu(NH 2 ) 2 , Yb(NH 2 ) 2 and Yb(NH 2 ) 3 ). For the preparation of CeN, PrN and NdN, the direct reaction of the rare earth metals with ammonia was extensively studied to determine optimal conditions. In the reaction of rare earth metals with ammonia, hydrides besides the nitrides were competitively formed. The reaction conditions such as temperatures and ratios of ammonia to rare earth metal were crucial in preferential formation of nitride. The nanocrystalline YbN and EuN readily absorbed large amounts of ammonia even at room temperature upon contact with ammonia (13.3 kPa). The absorbed ammonia existed in at least two forms on/in the nitride; the one was surface-adsorbed ammonia and the other ammonia absorbed in the nitride in a decomposed state. The properties of ammonia absorbed by the nitride were further evaluated by temperature-programmed desorption (TPD), FT-IR and XRD techniques

Influence of Plastic Deformation on Low-Temperature Surface Hardening of Austenitic Stainless Steel by Gaseous Nitriding

DEFF Research Database (Denmark)

Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

2015-01-01

This article addresses an investigation of the influence of plastic deformation on low-temperature surface hardening by gaseous nitriding of two commercial stainless steels: EN 1.4369 and AISI 304. The materials were plastically deformed to several levels of equivalent strain by conventional......, reflected-light microscopy, and microhardness testing. The results demonstrate that a case of expanded austenite develops and that the presence of plastic deformation has a significant influence on the morphology of the nitrided case. The presence of strain-induced martensite favors the formation of Cr...

Plasma nitriding - an eco friendly surface hardening process

International Nuclear Information System (INIS)

Mukherjee, S.

2015-01-01

Surface hardening is a process of heating the metal such that the surface gets only hardened. This process is adopted for many components like gears, cams, and crankshafts, which desire high hardness on the outer surface with a softer core to withstand the shocks. So, to attain such properties processes like carburising, nitriding, flame hardening and induction hardening are employed. Amongst these processes nitriding is the most commonly used process by many industries. In nitriding process the steel material is heated to a temperature of around 550 C and then exposed to atomic nitrogen. This atomic nitrogen reacts with iron and other alloying elements and forms nitrides, which are very hard in nature. By this process both wear resistance and hardness of the product can be increased. The atomic nitrogen required for this process can be obtained using ammonia gas (gas nitriding), cyanide based salt bath (liquid nitriding) and plasma medium (plasma nitriding). However, plasma nitriding has recently received considerable industrial interest owing to its characteristic of faster nitrogen penetration, short treatment time, low process temperature, minimal distortion, low energy use and easier control of layer formation compared with conventional techniques such as gas and liquid nitriding. This process can be used for all ferrous materials including stainless steels. Plasma nitriding is carried out using a gas mixture of nitrogen and hydrogen gas at sub atmospheric pressures hence, making it eco-friendly in nature. Plasma nitriding allows modification of the surface layers and hardness profiles by changing the gas mixture and temperature. The wide applicable temperature range enables a multitude of applications, beyond the possibilities of gas or salt bath processes. This has led to numerous applications of this process in industries such as the manufacture of machine parts for plastics and food processing, packaging and tooling as well as pumps and hydraulic, machine

Nano-structure and tribological properties of B+ and Ti+ co-implanted silicon nitride

International Nuclear Information System (INIS)

Nakamura, Naoki; Noda, Katsutoshi; Yamauchi, Yukihiko

2005-01-01

Silicon nitride ceramics have been co-implanted with boron and titanium ions at a fluence of 2 x 10 17 ions/cm 2 and an energy of 200 keV. TEM results indicated that the boron and titanium-implanted layers were amorphized separately and titanium nitride nano-crystallites were formed in the titanium-implanted layer. XPS results indicated that the implantation profile varied a little depending on the ion implantation sequence of boron and titanium ions, with the boron implantation peak shifting to a shallower position when implanted after Ti + -implantation. Wear tests of these ion-implanted materials were carried out using a block-on-ring wear tester under non-lubricated conditions against commercially available silicon nitride materials. The specific wear rate was reduced by ion implantation and showed that the specific wear rate of Ti + -implanted sample was the lowest, followed by B + , Ti + co-implanted and B + -implanted samples

Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

International Nuclear Information System (INIS)

Cloud, Andrew N.; Abelson, John R.; Davis, Luke M.; Girolami, Gregory S.

2014-01-01

Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300 °C from three recently synthesized M[N(t-Bu) 2 ] 2 precursors, where M = Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200 °C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18 nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities

Characterization Modeling of the Flow Through Ion Gun: Applications to Nitride Processing

Energy Technology Data Exchange (ETDEWEB)

Dennis, Darcie [Colorado School of Mines, Golden, CO (United States)

2003-07-01

The objective of this work was to characterize the flow through ion gun and verify the results with optimal production of cubic boron nitride thin film coatings. The experimental method involved characterizing the plasma produced by the ion source, calculating the operational capabilities of the ion source, correlating the ion source processing conditions to known deposition conditions for BN films, depositing BN films and characterizing the materials produced. In this manner, an understanding of the source operation and capabilities can be discerned as well as an observation of the unique features of this ion source. The plasma characterization was conducted with the use of a Hiden® Analytical electrostatic quadrupole plasma (EQP) analyzer. The resulting energy spectrum of the selected masses provided information about the population of ionic species present in the plasma during deposition under controlled conditions. Total ion flux was measured using a Faraday cup to correlate the two parameters. Measurements of the total ion flux combined with the information from the EQP were used to calculate the total ion flux of the individual species incident on the substrate during deposition. An oscillating quartz crystal monitor measured the deposition rate which was correlated to the atomic arrival rate at the substrate. Using the combination of this information, a momentum transfer parameter was calculated for optimal processing conditions of BN films using the FTIG. Characterization of the resulting films was challenging due to a number of difficulties with most common analytical techniques. However, XTEM revealed that the FTIG actually oscillates in and out of the necessary conditions for cBN deposition. The films also show non-uniformities, indicating the plasma was not continuously stable during the deposition. The cBN films formed consisted of 10-20 nm grain sizes. Electron diffraction was used to identify cBN crystallites and verify the processing parameters.

Solvothermal synthesis: a new route for preparing nitrides

CERN Document Server

Demazeau, G; Denis, A; Largeteau, A

2002-01-01

Solvothermal synthesis appears to be an interesting route for preparing nitrides such as gallium nitride and aluminium nitride, using ammonia as solvent. A nitriding additive is used to perform the reaction and, in the case of gallium nitride, is encapsulated by melt gallium. The syntheses are performed in the temperature range 400-800 deg. C and in the pressure range 100-200 MPa. The synthesized powders are characterized by x-ray diffraction and scanning electron microscopy. Finely divided gallium nitride GaN and aluminium nitride AlN, both with wurtzite-type structure, can be obtained by this route.

Strength evaluation test of pressureless-sintered silicon nitride at room temperature

Science.gov (United States)

Matsusue, K.; Takahara, K.; Hashimoto, R.

1984-01-01

In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

Leachability of nitrided ilmenite in hydrochloric acid

OpenAIRE

Swanepoel, J.J.; van Vuuren, D.S.; Heydenrych, M.

2011-01-01

Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200°C) chlorination reaction will not react with chlorine. It is therefore necessary to remove as much iron as possible from the nitrided ilmenite. Hydrochloric acid leaching is a possible process route to remove metallic iron from nitrided ilmenite without excessive dissolution o...

Nitriding of high speed steel

International Nuclear Information System (INIS)

Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

2010-01-01

Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

Residual stress in ion implanted titanium nitride studied by parallel beam glancing incidence x-ray diffraction

International Nuclear Information System (INIS)

Geist, D.E.; Perry, A.J.; Treglio, J.R.; Valvoda, V.; Rafaja, D.

1995-01-01

Ion implantation is known to increase the lifetime of cutting tools. Current theories are the increase in lifetime is caused by an increase in the residual stress, or by work hardening of the surface associated with the implantation. In this work the effect of ion implantation on the residual stress in titanium nitride coatings made by the standard industrial methods of chemical and physical vapor deposition (CVD and PVD) is studied. It is found in the as-received condition (unimplanted), the residual stress levels are near zero for CVD materials and highly compressive, of the order of 6 GPa, for PVD materials. Ion implantation has no effect on the residual stress in the coatings made by CVD. Nitrogen does increase the compressive residual stress by some 10% in the near surface regions of PVD coatings, while nickel-titanium dual metal ion implantation does not have any effect. It appears that the lifetime increase is not associated with residual stress effects

Effect of nitrogen ion dose on the corrosion resistance, the microstructure and the phase structure of the biomaterials austenitic stainless steel 316L

International Nuclear Information System (INIS)

Lely Susita RM; Bambang Siswanto; Ihwanul Aziz; Anjar Anggraini H

2016-01-01

The succeed of the use of biomaterials for orthopedic implant device is determined by its mechanical properties, chemical stability and biocompatibility in tissues and body fluids. The corrosion resistance is one of the main property of biomaterials to determine for successful orthopedic implant in body tissues. Surface modification is carried out to improve biomaterial surface properties of austenitic stainless steel 316L with nitrogen ion implantation technique and ion nitriding. Nitrogen ion implantation performed on 60 keV ion energy and ion dose variations 2 x 10"1"6 ions/cm"2- 2 x 10"1"7 ions/cm"2. The corrosion resistance of austenitic stainless steel 316L in Hanks solution is measured by using a potentiostat, and corrosion resistance optimum of a sample is obtained at an ion dose of 5 x 10"1"6 ions/cm"2 and increase by a factor of 2.1 if compared to the sample without the nitrogen ion implantation. Further the sample of austenitic stainless steel 316L with the optimum corrosion resistance is processed by ion nitriding technique at a nitriding temperature of 350 °C and nitriding time of 4 hours. Based on corrosion test of the sample produced by ion nitriding is obtained an increasing the corrosion resistance by a factor of 2.96 when compared to the sample before nitrogen ion implantation. The improvement of corrosion resistance of the sample is caused by the formation of iron nitride ξ-Fe2N and γ- Fe4N which has excellent corrosion resistance properties. (author)

Friction and wear behaviour of ion beam modified ceramics

International Nuclear Information System (INIS)

Lankford, J.; Wei, W.; Kossowsky, R.

1987-01-01

In the present study, the sliding friction coefficients and wear rates of carbide, oxide, and nitride materials for potential use as sliding seals (ring/liner) were measured under temparature, environmental, velocity, and loading conditions representative of a diesel engine. In addition, silicon nitride and partially stabilized zirconia discs were modified by ion mixing with TiNi, nickel, cobalt and chromium, and subsequently run against carbide pins, with the objective of producing reduced friction via solid lubrication at elevated temperature. Unmodified ceramic sliding couples were characterized at all temperatures by friction coefficients of 0.24 and above. However, the coefficient at 800 0 C in an oxidizing environment was reduced to below 0.1, for certain material combinations, by the ion implantation of TiNi or cobalt. This beneficial effect was found to derive from lubricious titanium, nickel, and cobalt oxides. (author)

Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

Energy Technology Data Exchange (ETDEWEB)

Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

2014-05-28

Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

Study of the temperature dependent nitrogen retention in tungsten surfaces by XPS-analysis

Energy Technology Data Exchange (ETDEWEB)

Plank, Ulrike [Max-Planck-Institut fuer Plasmaphysik, Boltzmannstr. 2, D-85748 Garching (Germany); Fakultaet fuer Physik der Ludwig-Maximilians-Universitaet Muenchen, Schellingstrasse 4, D-80799 Muenchen (Germany); Meisl, Gerd; Hoeschen, Till [Max-Planck-Institut fuer Plasmaphysik, Boltzmannstr. 2, D-85748 Garching (Germany)

2016-07-01

To reduce the power load on the divertor of fusion experiments, nitrogen (N) is puffed into the plasma. As a side effect, nitrogen gets implanted into the tungsten (W) walls of the reactor and forms nitride layers. Their formation and, therefore, the N accumulation in W showed an unexpected temperature dependence in previous experiments. To study the nitrogen retention, we implanted N ions with an energy of 300 eV into W and observed the evolution of the surface composition by X-ray photoelectron spectroscopy (XPS). We find that the N content does not change when the sample is annealed up to 800 K after implantation at lower temperatures. In contrast, the N concentration decreases with increasing implantation temperature. At 800 K implantation temperature, the N saturation level is about 5 times lower compared to 300 K implantation. A possible explanation for this difference is an enhanced diffusion during ion bombardment due to changes in the structure or in the chemical state of the tungsten nitride system. Ongoing tungsten nitride erosion experiments shall help to clarify whether the strong temperature dependence is the result of enhanced diffusion or of phase changes.

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Low Working-Temperature Acetone Vapor Sensor Based on Zinc Nitride and Oxide Hybrid Composites.

Science.gov (United States)

Qu, Fengdong; Yuan, Yao; Guarecuco, Rohiverth; Yang, Minghui

2016-06-01

Transition-metal nitride and oxide composites are a significant class of emerging materials that have attracted great interest for their potential in combining the advantages of nitrides and oxides. Here, a novel class of gas sensing materials based on hybrid Zn3 N2 and ZnO composites is presented. The Zn3 N2 /ZnO (ZnNO) composites-based sensor exhibits selectivity and high sensitivity toward acetone vapor, and the sensitivity is dependent on the nitrogen content of the composites. The ZnNO-11.7 described herein possesses a low working temperature of 200 °C. The detection limit (0.07 ppm) is below the diabetes diagnosis threshold (1.8 ppm). In addition, the sensor shows high reproducibility and long-term stability. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

On the S-phase formation and the balanced plasma nitriding of austenitic-ferritic super duplex stainless steel

Science.gov (United States)

de Oliveira, Willian R.; Kurelo, Bruna C. E. S.; Ditzel, Dair G.; Serbena, Francisco C.; Foerster, Carlos E.; de Souza, Gelson B.

2018-03-01

The different physical responses of austenite (γ) and ferrite (α) iron structures upon nitriding result in technical challenges to the uniform modification of α-γ materials, as the super duplex stainless steel (SDSS). The effects of voltage (7-10 kV), frequency and pulse width on the nitrogen plasma immersion ion implantation of SDSS (α ∼ 56%, γ ∼ 44%) were investigated, correlated with structural, morphological and mechanical analyses. By controlling the treatment power, temperatures ranged from 292 °C to 401 °C. Despite the overall increase in hardness for any of the employed parameters (from ∼6 GPa to ∼15 GPa), the structure of individual grains was strikingly dissimilar at the same temperatures, depending on the energetic conditions of implantation. Modified-α grains containing iron nitrides (ε-Fe2-3N, γ‧ -Fe4N) presented intense brittleness, whereas the expanded phase γN (S-phase) laid principally in modified-γ grains, exhibiting ductile-like deformation features and thicker layers. The γN was the dominant phase in both α-γ grains at ∼401 °C, providing them with balanced structure and mechanical behavior. These phenomena corroborate with γN as mediator of the process, through a mechanism involving the nitrogen-promoted ferrite to austenite conversion and nitrides dissolution at high temperatures. An approximately linear correlation of the γN content with respect to the ion energy per pulse was demonstrated, which properly embodies limiting effects to the treatment. This can be a parameter for the α-γ steel surface modification, consisting in a better adjustment to obtain more precise control along with temperature.

Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

2015-02-14

Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

Topotactic synthesis of vanadium nitride solid foams

International Nuclear Information System (INIS)

Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

1993-01-01

Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

Silicon nitride nanosieve membrane

NARCIS (Netherlands)

Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

2004-01-01

An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

Gold film with gold nitride - A conductor but harder than gold

International Nuclear Information System (INIS)

Siller, L.; Peltekis, N.; Krishnamurthy, S.; Chao, Y.; Bull, S.J.; Hunt, M.R.C.

2005-01-01

The formation of surface nitrides on gold films is a particularly attractive proposition, addressing the need to produce harder, but still conductive, gold coatings which reduce wear but avoid the pollution associated with conventional additives. Here we report production of large area gold nitride films on silicon substrates, using reactive ion sputtering and plasma etching, without the need for ultrahigh vacuum. Nanoindentation data show that gold nitride films have a hardness ∼50% greater than that of pure gold. These results are important for large-scale applications of gold nitride in coatings and electronics

Ion temperature via laser scattering on ion Bernstein waves

International Nuclear Information System (INIS)

Wurden, G.A.; Ono, M.; Wong, K.L.

1981-10-01

Hydrogen ion temperature has been measured in a warm toroidal plasma with externally launched ion Bernstein waves detected by heterodyne CO 2 laser scattering. Radial scanning of the laser beam allows precise determination of k/sub perpendicular to/ for the finite ion Larmor radius wave (ω approx. less than or equal to 2Ω/sub i/). Knowledge of the magnetic field strength and ion concentration then give a radially resolved ion temperature from the dispersion relation. Probe measurements and Doppler broadening of ArII 4806A give excellent agreement

Influence of Plastic Deformation on Low Temperature Surface Hardening of Austenitic and Precipitation Hardening Stainless Steels by Gaseous Nitriding

DEFF Research Database (Denmark)

Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

2015-01-01

This article addresses an investigation of the influence of plastic deformation on low temperature surface hardening by gaseous nitriding of three commercial austenitic stainless steels: AISI 304, EN 1.4369 and Sandvik Nanoflex® with various degrees of austenite stability. The materials were...... case included X-ray diffraction analysis, reflected light microscopy and microhardness. The results demonstrate that a case of expanded austenite develops and that, in particular, strain-induced martensite has a large influence on the nitrided zone....

Leachability of nitrided ilmenite in hydrochloric acid

CSIR Research Space (South Africa)

Swanepoel, JJ

2010-10-01

Full Text Available Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200 °C) chlorination reaction...

Modeling the Gas Nitriding Process of Low Alloy Steels

Science.gov (United States)

Yang, M.; Zimmerman, C.; Donahue, D.; Sisson, R. D.

2013-07-01

The effort to simulate the nitriding process has been ongoing for the last 20 years. Most of the work has been done to simulate the nitriding process of pure iron. In the present work a series of experiments have been done to understand the effects of the nitriding process parameters such as the nitriding potential, temperature, and time as well as surface condition on the gas nitriding process for the steels. The compound layer growth model has been developed to simulate the nitriding process of AISI 4140 steel. In this paper the fundamentals of the model are presented and discussed including the kinetics of compound layer growth and the determination of the nitrogen diffusivity in the diffusion zone. The excellent agreements have been achieved for both as-washed and pre-oxided nitrided AISI 4140 between the experimental data and simulation results. The nitrogen diffusivity in the diffusion zone is determined to be constant and only depends on the nitriding temperature, which is ~5 × 10-9 cm2/s at 548 °C. It proves the concept of utilizing the compound layer growth model in other steels. The nitriding process of various steels can thus be modeled and predicted in the future.

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

International Nuclear Information System (INIS)

Shinoda, Hiroyuki; Mutsukura, Nobuki

2005-01-01

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

High-ion temperature experiments with negative-ion-based NBI in LHD

International Nuclear Information System (INIS)

Takeiri, Y.; Morita, S.; Tsumori, K.; Ikeda, K.; Oka, Y.; Osakabe, M.; Nagaoka, K.; Goto, M.; Miyazawa, J.; Masuzaki, S.; Ashikawa, N.; Yokoyama, M.; Narihara, K.; Yamada, I.; Kubo, S.; Shimozuma, T.; Inagaki, S.; Tanaka, K.; Peterson, B.J.; Ida, K.; Kaneko, O.; Komori, A.; Murakami, S.

2005-01-01

High-Z plasmas have been produced with Ar- and/or Ne-gas fuelling to increase the ion temperature in the LHD plasmas heated with the high-energy negative-ion-based NBI. Although the electron heating is dominant in the high-energy NBI heating, the direct ion heating power is much enhanced effectively in low-density plasmas due to both an increase in the beam absorption (ionisation) power and a reduction of the ion density in the high-Z plasmas. Intensive Ne- and/or Ar-glow discharge cleaning works well to suppress dilution of the high-Z plasmas with the wall-absorbed hydrogen. As a result, the ion temperature increases with an increase in the ion heating power normalized by the ion density, and reaches 10 keV. An increase in the ion temperature is also observed with an addition of the centrally focused ECRH to the low-density and high-Z NBI plasma, suggesting improvement of the ion transport. The results obtained in the high-Z plasma experiments with the high-energy NBI heating indicate that an increase in the direct ion heating power and improvement of the ion transport are essential to the ion temperature rise, and that a high-ion temperature would be obtained as well in hydrogen plasmas with low-energy positive-NBI heating which is planed in near future in LHD. (author)

Optical characterisation of III-V nitride-based multiphase and diluted magnetic semiconductors

International Nuclear Information System (INIS)

Wegscheider, M.

2009-01-01

The present work is devoted to the investigation of the optical properties of transition metal doped Gallium nitride. The Gallium nitride layers are epitaxially grown in a full metalorganic chemical vapour deposition process whereas the transition metals iron or manganese as well as the n and p-type dopants silicon and magnesium are incorporated simultaneously. Background and driving force of the realization of such material systems is basically the evocation of ferromagnetic spin alignment where free carriers ensure the correspondence between the localized spin state provided by the metal ions. The production of completely new devices for semiconductor industries based on the possibility to switch on or off the ferrimagnetic alignment by changing the free carrier concentration can be expected in the near future. In this context photoluminescence studies in the ultraviolet and mid infrared spectral range at temperatures between the liquid helium point and room temperature at atmospheric pressure were made. These measurements basically provide information on optical transitions between the conduction and valence band and deep defects as well as on crystal field forced transitions within the d-orbitals of the metal ion involved. In this context valuable knowledge could have been gained on doping concentrations, growth fashions and parameters, formation of secondary phases as well as on the doping efficiency and incorporation sites of the metal atoms. (author) [de

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

KAUST Repository

Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; Margalith, T.; Lee, S.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-01-01

© 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm²), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

KAUST Repository

Leonard, J. T.

2015-07-06

© 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm²), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

Critical fields of niobium nitride films of various granularity

International Nuclear Information System (INIS)

Antonova, E.A.; Sukhov, V.A.

1983-01-01

The behaviour of lattice parameter, specific electrical resistivity, critical temperature, and temperature dependence of upper critical field near Tsub(cr) of sputtered niobium nitride films is investigated versus the substrate temperature and gas mixture composition in the process of reactive cathode sputtering. The relation between extrapolated value of the upper critical field and granularity of niobium nitride films, close as to composition to the stoichiometric one, has been found. Values of the kappa parameter of the Ginsburg-Landau theory and of the coherence length for niobium nitride films of various granularity are estimated in an approximation of uniform distribution of impurities in a sample

Ion-temperature-gradient-driven modes in bi-ion magnetoplasma

Energy Technology Data Exchange (ETDEWEB)

Batool, Nazia; Mirza, Arshad M [Theoretical Plasma Physics Group, Department of Physics, Quaid-i-Azam University, Islamabad 45320 (Pakistan); Qamar, Anisa [Department of Physics, Peshawar University, NWFP 25120 (Pakistan)], E-mail: nazia.batool@ncp.edu.pk

2008-12-15

The toroidal ion-temperature-gradient (ITG)-driven electrostatic drift waves are investigated for bi-ion plasmas with equilibrium density, temperature and magnetic field gradients. Using Braginskii's transport equations for the ions and Boltzmann distributed electrons, the mode coupling equations are derived. New ITG-driven modes are shown to exist. The results of the present study should be helpful to understand several wave phenomena in space and tokamak plasmas.

Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

International Nuclear Information System (INIS)

Hezel, R.; Streb, W.

1985-01-01

Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

Bonding silicon nitride using glass-ceramic

International Nuclear Information System (INIS)

Dobedoe, R.S.

1995-01-01

Silicon nitride has been successfully bonded to itself using magnesium-aluminosilicate glass and glass-ceramic. For some samples, bonding was achieved using a diffusion bonder, but in other instances, following an initial degassing hold, higher temperatures were used in a nitrogen atmosphere with no applied load. For diffusion bonding, a small applied pressure at a temperature below which crystallisation occurs resulted in intimate contact. At slightly higher temperatures, the extent of the reaction at the interface and the microstructure of the glass-ceramic joint was highly sensitive to the bonding temperature. Bonding in a nitrogen atmosphere resulted in a solution-reprecipitation reaction. A thin layer of glass produced a ''dry'', glass-free joint, whilst a thicker layer resulted in a continuous glassy join across the interface. The chromium silicide impurities within the silicon nitride react with the nucleating agent in the glass ceramic, which may lead to difficulty in producing a fine glass-ceramic microstructure. Slightly lower temperatures in nitrogen resulted in a polycrystalline join but the interfacial contact was poor. It is hoped that one of the bonds produced may be developed to eventually form part of a graded joint between silicon nitride and a high temperature nickel alloy. (orig.)

Characterization of nitrogen-ion-implanted aluminium

International Nuclear Information System (INIS)

Rauschenbach, B.; Breuer, K.; Leonhardt, G.

1990-01-01

Aluminium has been implanted with nitrogen ions at different temperatures. The implanted samples have been characterized by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and electron energy-loss spectroscopy (EELS). Deconvolution procedures are needed to separate the influence of the ion sputter profiling by AES and XPS from the nitrogen-ion-beam-induced effects. The chemical state of Al, N, O and C was identified by deconvolution of the measured spectra. In general, there were double-peak structures observed for N 1s and O 1s, identified as contributions from nitrides and weakly bound nitrogen, and oxides and weakly bound oxygen, respectively. Auger analysis confirms the influence of the nitrogen ion fluence on the shape of the concentration distribution. The influence of temperature on the chemical state of implanted aluminium and on the concentration distribution is discussed. (orig.)

Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium

International Nuclear Information System (INIS)

Anselin, F.

1966-06-01

A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [fr

Performance improvement of silicon nitride ball bearings by ion implantation. CRADA final report

International Nuclear Information System (INIS)

Williams, J.M.; Miner, J.

1998-01-01

The present report summarizes technical results of CRADA No. ORNL 92-128 with the Pratt and Whitney Division of United Technologies Corporation. The stated purpose of the program was to assess the 3effect of ion implantation on the rolling contact performance of engineering silicon nitride bearings, to determine by post-test analyses of the bearings the reasons for improved or reduced performance and the mechanisms of failure, if applicable, and to relate the overall results to basic property changes including but not limited to swelling, hardness, modulus, micromechanical properties, and surface morphology. Forty-two control samples were tested to an intended runout period of 60 h. It was possible to supply only six balls for ion implantation, but an extended test period goal of 150 h was used. The balls were implanted with C-ions at 150 keV to a fluence of 1.1 x 10 17 /cm 2 . The collection of samples had pre-existing defects called C-cracks in the surfaces. As a result, seven of the control samples had severe spalls before reaching the goal of 60 h for an unacceptable failure rate of 0.003/sample-h. None of the ion-implanted samples experienced engineering failure in 150 h of testing. Analytical techniques have been used to characterize ion implantation results, to characterize wear tracks, and to characterize microstructure and impurity content. In possible relation to C-cracks. It is encouraging that ion implantation can mitigate the C-crack failure mode. However, the practical implications are compromised by the fact that bearings with C-cracks would, in no case, be acceptable in engineering practice, as this type of defect was not anticipated when the program was designed. The most important reason for the use of ceramic bearings is energy efficiency

X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment

International Nuclear Information System (INIS)

Abendroth, B.; Gago, R.; Eichhorn, F.; Moeller, W.

2004-01-01

Relaxation of the intrinsic stress of cubic boron nitride (cBN) thin films has been studied by x-ray diffraction (XRD) using synchrotron light. The stress relaxation has been attained by simultaneous medium-energy ion bombardment (2-10 keV) during magnetron sputter deposition, and was confirmed macroscopically by substrate curvature measurements. In order to investigate the stress-release mechanisms, XRD measurements were performed in in-plane and out-of-plane geometry. The analysis shows a pronounced biaxial state of compressive stress in the cBN films grown without medium-energy ion bombardment. This stress is partially released during the medium-energy ion bombardment. It is suggested that the main path for stress relaxation is the elimination of strain within the cBN grains due to annealing of interstitials

In situ characterization of the nitridation of dysprosium during mechanochemical processing

Energy Technology Data Exchange (ETDEWEB)

Jaques, Brian J.; Osterberg, Daniel D.; Alanko, Gordon A.; Tamrakar, Sumit; Smith, Cole R.; Hurley, Michael F.; Butt, Darryl P., E-mail: DarrylButt@BoiseState.edu

2015-01-15

Highlights: • A nitridation reaction in a high energy planetary ball mill was monitored in situ. • Dysprosium mononitride was synthesized from Dy at low temperatures in short times. • Ideal gas law and in situ temperature and pressure used to assess reaction extent. • It is proposed that reaction rate is proportional to the creation of new surface. - Abstract: Processing of advanced nitride ceramics traditionally requires long durations at high temperatures and, in some cases, in hazardous atmospheres. In this study, dysprosium mononitride (DyN) was rapidly formed from elemental dysprosium in a closed system at ambient temperatures. An experimental procedure was developed to quantify the progress of the nitridation reaction during mechanochemical processing in a high energy planetary ball mill (HEBM) as a function of milling time and intensity using in situ temperature and pressure measurements, SEM, XRD, and particle size analysis. No intermediate phases were formed. It was found that the creation of fresh dysprosium surfaces dictates the rate of the nitridation reaction, which is a function of milling intensity and the number of milling media. These results show clearly that high purity nitrides can be synthesized with short processing times at low temperatures in a closed system requiring a relatively small processing footprint.

Electrochemical Solution Growth of Magnetic Nitrides

Energy Technology Data Exchange (ETDEWEB)

Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2014-10-01

Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

International Nuclear Information System (INIS)

Karim, M.Z.; Cameron, D.C.; Murphy, M.J.; Hashmi, M.S.J.

1991-01-01

Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B 2 H 6 ) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH 3 -NH 3 ) which is a crystalline solid at room temperature with a high vapour pressure. The BH 3 -NH 3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm -1 (hexagonal) and 1070 cm -1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

Numerical simulation of ion temperature gradient driven modes in the presence of ion-ion collisions

International Nuclear Information System (INIS)

Xu, X.Q.

1990-08-01

Ion temperature gradient driven modes in the presence of ion-ion collisions in a toroidal geometry with trapped ions have been studied by using a 1 2/2 d linearized gyro-kinetic particle simulation code in the electrostatic limit. The purpose of the investigation is to try to understand the physics of flat density discharges, in order to test the marginal stability hypothesis. Results giving threshold conditions of L Ti /R 0 , an upper bound on k χ , and linear growth rates and mode frequencies over all wavelengths for the collisionless ion temperature gradient driven modes are obtained. The behavior of ion temperature gradient driven instabilities in the transition from slab to toroidal geometry, with trapped ions, is shown. A Monte Carlo scheme for the inclusion of ion-ion collisions, in which ions can undergo Coulomb collisional dynamical friction, velocity space diffusion and random walk of guiding centers, has been constructed. The effects of ion-ion collisions on the long wave length limit of the ion modes is discussed. 44 refs., 12 figs

Temperature-dependent ion beam mixing

International Nuclear Information System (INIS)

Rehn, L.E.; Alexander, D.E.

1993-08-01

Recent work on enhanced interdiffusion rates during ion-beam mixing at elevated temperatures is reviewed. As discussed previously, expected increase in ion-beam mixing rates due to 'radiation-enhanced diffusion' (RED), i.e. the free migration of isolated vacancy and interstitial defects, is well documented in single-crystal specimens in the range of 0.4 to 0.6 of absolute melting temperature. In contrast, the increase often observed at somewhat lower temperatures during ion-beam mixing of polycrystalline specimens is not well understood. However, sufficient evidence is available to show that this increase reflects intracascade enhancement of a thermally-activated process that also occurs without irradiation. Recent evidence is presented which suggests that this process is Diffusion-induced Grain-Boundary Migration (DIGM). An important complementary conclusion is that because ion-beam mixing in single-crystal specimens exhibits no significant temperature dependence below that of RED, models that invoke only irradiation-specific phenomena, e.g., cascade-overlap, thermal-spikes, or liquid-diffusion, and hence which predict no difference in mixing behavior between single- or poly-crystalline specimens, cannot account for the existing results

Modification of the surfaces of stainless steel during titanium nitride deposition by a dynamic mixing method

Science.gov (United States)

Yokota, Katsuhiro; Tamura, Susumu; Nakamura, Kazuhiro; Horiguchi, Motohiro; Nakaiwa, Hiroki; Sugimoto, Takashi; Akamatsu, Katsuya; Nakao, Kazuyoshi

2000-05-01

Surfaces of stainless steel SUS304 were coated with titanium nitride (TiN) at temperatures ranging from 400°C to 770°C using a dynamic mixing technique. The N+ ions were accelerated at energies of 0.5-2.0 keV, and were implanted into the stainless steel. The composition of the prepared TiN films was measured using Rutherford backscattering spectrometry with He ions at an energy of 2.0 MeV. Intermediate layers containing compounds such as FesNq, Cr2N, and CrFe were formed between the TiN films and substrates at substrate temperatures higher than 700°C. The thickness of the TiN films decreased significantly when the intermediate layers were formed.

Ion temperature measurements in the Maryland Spheromak

International Nuclear Information System (INIS)

Gauvreau, J.L.

1992-01-01

Initial spectroscopic data from MS showed evidence of ion heating as deduced from the line widths of different ion species. Detailed measurements of OIV spectral emission line profiles in space and time revealed that heating takes place at early time, before spheromak formation and is occurring within the current discharge. The measured ion temperature is several times the electron temperature and cannot be explained by classical (Spitzer) resistivity. Classically, ions are expected to have lower temperatures than the electrons and therefore, lower temperatures than observed. High ion temperatures have been observed in different RFP's and Spheromaks but are usually associated with relaxation to the Taylor state and occur in the sustainment phase. During formation, the current delivered to start the discharge is not axisymmetric and as a consequence, X-points appear in the magnetic flux. A two dimensional analysis predicts that magnetic reconnection occurring at an X-point can give rise to high ion heating rates. A simple 0-dimensional calculation showed that within the first 20 μs, a conversion of mass flow kinetic energy into ion temperature could take place due to viscosity

The use of aluminum nitride to improve Aluminum-26 Accelerator Mass Spectrometry measurements and production of Radioactive Ion Beams

Science.gov (United States)

Janzen, Meghan S.; Galindo-Uribarri, Alfredo; Liu, Yuan; Mills, Gerald D.; Romero-Romero, Elisa; Stracener, Daniel W.

2015-10-01

We present results and discuss the use of aluminum nitride as a promising source material for Accelerator Mass Spectrometry (AMS) and Radioactive Ion Beams (RIBs) science applications of 26Al isotopes. The measurement of 26Al in geological samples by AMS is typically conducted on Al2O3 targets. However, Al2O3 is not an ideal source material because it does not form a prolific beam of Al- required for measuring low-levels of 26Al. Multiple samples of aluminum oxide (Al2O3), aluminum nitride (AlN), mixed Al2O3-AlN as well as aluminum fluoride (AlF3) were tested and compared using the ion source test facility and the stable ion beam (SIB) injector platform at the 25-MV tandem electrostatic accelerator at Oak Ridge National Laboratory. Negative ion currents of atomic and molecular aluminum were examined for each source material. It was found that pure AlN targets produced substantially higher beam currents than the other materials and that there was some dependence on the exposure of AlN to air. The applicability of using AlN as a source material for geological samples was explored by preparing quartz samples as Al2O3 and converting them to AlN using a carbothermal reduction technique, which involved reducing the Al2O3 with graphite powder at 1600 °C within a nitrogen atmosphere. The quartz material was successfully converted to AlN. Thus far, AlN proves to be a promising source material and could lead towards increasing the sensitivity of low-level 26Al AMS measurements. The potential of using AlN as a source material for nuclear physics is also very promising by placing 26AlN directly into a source to produce more intense radioactive beams of 26Al.

Hydrogen diffusion between plasma-deposited silicon nitride-polyimide polymer interfaces

International Nuclear Information System (INIS)

Nguyen, S.V.; Kerbaugh, M.

1988-01-01

This paper reports a nuclear reaction analysis (NRA) for hydrogen technique used to analyze the hydrogen concentration near plasma enhanced chemical vapor deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF 4 + O 2 (8% O 2 ) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate

Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

Science.gov (United States)

Chen, Tai-Chou Papo

high temperatures (800˜1050°C) in order to increase the solubility of nitrogen into the free Al on the surface of the growing film. The films were found to have smooth surface morphology with narrow on-axis X-ray diffraction (XRD) rocking curves and relatively broad off-axis XRD rocking curves attributed to the lack of a buffer layer during the film growth. The device aspect of this work involves the material formation and the device fabrication of Indium Gallium Nitride (InGaN) based LEDs on textured GaN templates produced spontaneously by either hydride vapor phase epitaxy (HVPE) or using a method of natural lithography and reactive ion etching. This part of the work includes the film deposition and characterization of InGaNJGaN quantum wells on smooth and textured GaN template.

Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

International Nuclear Information System (INIS)

Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2007-01-01

We have investigated the stability of amorphous germanium nitride (Ge 3 N 4 ) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge 3 N 4 layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO 2 layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO 2 islands on the surfaces. These findings indicate that although Ge 3 N 4 layers have superior thermal stability compared to the GeO 2 layers, Ge 3 N 4 reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge 3 N 4 insulator or passivation layers

Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature

Science.gov (United States)

Lv, Meizhe; Xu, Bin; Cai, Lichao; Guo, Xiaofei; Yuan, Xingdong

2018-05-01

After rapid cooling, cubic boron nitride (c-BN) single crystals synthesized under high pressure and high temperature (HPHT) are wrapped in the white film powders which are defined as growth interface. In order to make clear that the transition mechanism of c-BN single crystals, the variation of B and N atomic hybrid states in the growth interface is analyzed with the help of auger electron spectroscopy in the Li-based system. It is found that the sp2 fractions of B and N atoms decreases, and their sp3 fractions increases from the outer to the inner in the growth interface. In addition, Lithium nitride (Li3N) are not found in the growth interface by X-ray diffraction (XRD) experiment. It is suggested that lithium boron nitride (Li3BN2) is produced by the reaction of hexagonal boron nitride (h-BN) and Li3N at the first step, and then B and N atoms transform from sp2 into sp3 state with the catalysis of Li3BN2 in c-BN single crystals synthesis process.

RF plasma nitriding of severely deformed iron-based alloys

International Nuclear Information System (INIS)

Ferkel, H.; Glatzer, M.; Estrin, Y.; Valiev, R.Z.; Blawert, C.; Mordike, B.L.

2003-01-01

The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10 -5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of ε and γ' nitrides in the compound layer, with a preferential formation of γ' at the expense of the α-phase at the higher nitriding temperature. The corresponding surface hardness was up to 950 HV0.01. While the HPT-processed St2K50 exhibits both nitride phases after nitriding at 350 deg. C, only the γ'-phase was observed after nitriding at 400 deg. C. A surface hardness of up to 1050 HV0.01 was measured for this steel. The high alloyed steel X5CrNi1810 exhibited the highest increase in surface hardness when HPT was combined with nitriding at 350 deg. C. The surface hardness of this steel was greater than 1400 HV0.025. The XRD analyses indicate the formation of the expanded austenite (S-phase) in the surface layer as a result of RF plasma nitriding. Furthermore, after HPT X5CrNi1810 was transformed completely into deformation martensite which did not transform back to austenite under thermochemical treatment. However, in the case of nitriding of the HPT-processed high alloyed steel at 400 deg. C, the formation of the S-phase was less pronounced. In view of the observed XRD peak broadening, the formation of nitrides, such as e.g. CrN, cannot be ruled out

Nitridation of porous GaAs by an ECR ammonia plasma

International Nuclear Information System (INIS)

Naddaf, M; Hullavarad, S S; Ganesan, V; Bhoraskar, S V

2006-01-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy

Nitridation of porous GaAs by an ECR ammonia plasma

Energy Technology Data Exchange (ETDEWEB)

Naddaf, M [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India); Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic); Hullavarad, S S [Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742 (United States); Ganesan, V [Inter University Consortium, Indore (India); Bhoraskar, S V [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India)

2006-02-15

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Nitridation of porous GaAs by an ECR ammonia plasma

Science.gov (United States)

Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

2006-02-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Synthesis of nitrided MoO{sub 2} and its application as anode materials for lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Yoon, Sukeun, E-mail: skyoon@kier.re.kr [New and Renewable Energy Research Division, Korea Institute of Energy Research, Daejeon 305-343 (Korea, Republic of); Jung, Kyu-Nam; Jin, Chang Soo; Shin, Kyung-Hee [New and Renewable Energy Research Division, Korea Institute of Energy Research, Daejeon 305-343 (Korea, Republic of)

2012-09-25

Highlights: Black-Right-Pointing-Pointer Synthesis of nitrided molybdenum oxide by nitridation. Black-Right-Pointing-Pointer Superior cyclability for nitrided molybdenum oxide anodes. Black-Right-Pointing-Pointer Electrochemical reaction behavior of nitrided molybdenum oxide with lithium. - Abstract: Nitrided MoO{sub 2} has been synthesized by hydrothermal processing followed by post-nitridation with NH{sub 3} and investigated as alternative anode materials for rechargeable lithium batteries. Characterization data reveal the presence of molybdenum nitride ({gamma}-Mo{sub 2}N and {delta}-MoN) and molybdenum oxynitride (MoO{sub x}N{sub y}). The nitrided MoO{sub 2} exhibits a capacity of >420 mAh/g after 100 cycles and good rate capability. The improved electrochemical performance of the nitrided MoO{sub 2} compared to that of molybdenum oxide (MoO{sub 2}) is attributed to high electrical conductivity provided by nitrogen doping/or substitution in the oxygen octahedral site of MoO{sub 2} structure.

Non-destructive study of the ion-implantation-affected zone (the long-range effect) in titanium nitride

International Nuclear Information System (INIS)

Perry, A.J.; Treglio, J.R.; Schaffer, J.P.; Brunner, J.; Valvoda, V.; Rafaja, D.

1994-01-01

The depth to which metal ion implantation can change the structure of titanium nitride coatings is studied using two techniques - positron annihilation spectroscopy (PAS) and glancing-angle X-ray diffraction (GA-XRD) -which are normally applied to the study of bulk materials. The PAS results indicate that the depth to which vacancies are found greatly exceeds the depth at which the implanted material resides. In addition, the concentration of vacancies continues to increase with the dose of implanted ions. The GA-XRD data show that the implantation does not change the residual stress - it remains slightly tensile. Furthermore, there is an increase in the diffraction peak broadening, which is attributed to an increase in the local strain distribution resulting from the generation of a dislocation network at depths of up to several tenths of a micrometer below the implanted zone. The data support the view of a long-range effect, where metal ion implantation causes lattice defect generation within an implantation-affected zone (IAZ) to depths well beyond the implanted zone. The defective nature of the IAZ depends on the implanted dose and the acceleration voltage, as well as on the nature of the ions implanted. In the present work, there is no residual stress in the samples, so this cannot induce the IAZ. ((orig.))

Ion temperature gradient instability

International Nuclear Information System (INIS)

1989-01-01

Anomalous ion thermal conductivity remains an open physics issue for the present generation of high temperature Tokamaks. It is generally believed to be due to Ion Temperature Gradient Instability (η i mode). However, it has been difficult, if not impossible to identify this instability and study the anomalous transport due to it, directly. Therefore the production and identification of the mode is pursued in the simpler and experimentally convenient configuration of the Columbia Linear Machine (CLM). CLM is a steady state machine which already has all the appropriate parameters, except η i . This parameter is being increased to the appropriate value of the order of 1 by 'feathering' a tungsten screen located between the plasma source and the experimental cell to flatten the density profile and appropriate redesign of heating antennas to steepen the ion temperature profile. Once the instability is produced and identified, a thorough study of the characteristics of the mode can be done via a wide range of variation of all the critical parameters: η i , parallel wavelength, etc

Effect of ion nitriding on the crystal structure of 3 mol% Y2O3-doped ZrO2 thin-films prepared by the sol-gel method

International Nuclear Information System (INIS)

Ortiz, A.L.; Diaz-Parralejo, A.; Borrero-Lopez, O.; Guiberteau, F.

2006-01-01

We investigated the effect of ion nitriding on the crystal structure of 3 mol% Y 2 O 3 -doped ZrO 2 (3YSZ) thin-films prepared by the sol-gel method. For this purpose, we used X-ray diffractometry to determine the crystalline phases, the lattice parameters, the crystal sizes, and the lattice microstrains, and glow discharge-optical emission spectroscopy to obtain the depth profiles of the elemental chemical composition. We found that nitrogen atoms substitute oxygen atoms in the 3YSZ crystal, thus leading to the formation of unsaturated-substitutional solid solutions with reduced lattice parameters and Zr 0.94 Y 0.06 O 1.72 N 0.17 stoichiometric formula. We also found that ion nitriding does not affect the grain size, but does generate lattice microstrains due to the increase in point defects in the crystalline lattice

Waste conversion into high-value ceramics: Carbothermal nitridation synthesis of titanium nitride nanoparticles using automotive shredder waste.

Science.gov (United States)

Mayyas, Mohannad; Pahlevani, Farshid; Maroufi, Samane; Liu, Zhao; Sahajwalla, Veena

2017-03-01

Environmental concern about automotive shredder residue (ASR) has increased in recent years due to its harmful content of heavy metals. Although several approaches of ASR management have been suggested, these approaches remain commercially unproven. This study presents an alternative approach for ASR management where advanced materials can be generated as a by-product. In this approach, titanium nitride (TiN) has been thermally synthesized by nitriding pressed mixture of automotive shredder residue (ASR) and titanium oxide (TiO 2 ). Interactions between TiO 2 and ASR at non-isothermal conditions were primarily investigated using thermogravimetric analysis (TGA) and differential scanning calorimetry. Results indicated that TiO 2 influences and catalyses degradation reactions of ASR, and the temperature, at which reduction starts, was determined around 980 °C. The interaction between TiO 2 and ASR at isothermal conditions in the temperature range between 1200 and 1550 °C was also studied. The pressed mixture of both materials resulted in titanium nitride (TiN) ceramic at all given temperatures. Formation kinetics were extracted using several models for product layer diffusion-controlled solid-solid and solid-fluid reactions. The effect of reactants ratio and temperature on the degree of conversion and morphology was investigated. The effect of reactants ratio was found to have considerable effect on the morphology of the resulting material, while temperature had a lesser impact. Several unique structures of TiN (porous nanostructured, polycrystalline, micro-spherical and nano-sized structures) were obtained by simply tuning the ratio of TiO 2 to ASR, and a product with appreciable TiN content of around 85% was achieved after only one hour nitridation at 1550 °C. Copyright © 2016 Elsevier Ltd. All rights reserved.

Isolation and characterization of a uranium(VI)-nitride triple bond

Science.gov (United States)

King, David M.; Tuna, Floriana; McInnes, Eric J. L.; McMaster, Jonathan; Lewis, William; Blake, Alexander J.; Liddle, Stephen T.

2013-06-01

The nature and extent of covalency in uranium bonding is still unclear compared with that of transition metals, and there is great interest in studying uranium-ligand multiple bonds. Although U=O and U=NR double bonds (where R is an alkyl group) are well-known analogues to transition-metal oxo and imido complexes, the uranium(VI)-nitride triple bond has long remained a synthetic target in actinide chemistry. Here, we report the preparation of a uranium(VI)-nitride triple bond. We highlight the importance of (1) ancillary ligand design, (2) employing mild redox reactions instead of harsh photochemical methods that decompose transiently formed uranium(VI) nitrides, (3) an electrostatically stabilizing sodium ion during nitride installation, (4) selecting the right sodium sequestering reagent, (5) inner versus outer sphere oxidation and (6) stability with respect to the uranium oxidation state. Computational analyses suggest covalent contributions to U≡N triple bonds that are surprisingly comparable to those of their group 6 transition-metal nitride counterparts.

Nanocharacterization of TiN films obtained by Ion Vapor deposition

International Nuclear Information System (INIS)

Lara O, L; Jerez A, M; Morantes M, L; Plata, A; Torres, Y; Lasprilla, M; Zhabon, V

2011-01-01

We evaluate and characterize the surface at the nanoscale level and take into account the temperature variation effect in the process of plasma ion deposition for H13 steel samples coated by Titanium Nitride (TiN). The interferometric microscopy and atomic force microscopy (AFM) were used to measure the film to analyze the variation of structural and morphological properties of nanofilms that depend on the temperature of sustrate.

Wear behaviour of nitrogen-implanted and nitrided Ti-6Al-4V alloy

International Nuclear Information System (INIS)

Martinella, R.; Giovanardi, S.; Chevallard, G.; Villani, M.; Molinari, A.; Tosello, C.

1985-01-01

The comparison between the wear behaviour of nitrogen-implanted Ti-6Al-4V alloy and that of nitrided Ti-6Al-4V alloy is reported. Both treatments were carried out at temperatures from 573 to 973 K on lapped surfaces; in order to compare roughness effects, nitriding was also carried out on rougher samples. An improvement in wear resistance for lapped surfaces was noted after implantation at 573 K or higher temperatures and after nitriding at temperatures over 773 K only; however, at 873 K, nitriding was more effective than implantation. Rough nitrided surfaces showed better wear resistance than lapped nitrided surfaces or lapped implanted surfaces. Most probably the improvement in wear resistance on implanted samples is due to a reduction in friction induced by chemical modification of the surface as a result of oxide and TiN. Scanning electron microscopy observations which show subsurface voids and coalescence are in good agreement with a wear model previously reported. As implantation preserves the surface finish, a possible application is suggested. (Auth.)

Reaction-bonded silicon nitride

International Nuclear Information System (INIS)

Porz, F.

1982-10-01

Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

Predicting Microstructure Development During HighTemperature Nitriding of Martensitic Stainless SteelsUsing Thermodynamic Modeling

Directory of Open Access Journals (Sweden)

Tschiptschin André Paulo

2002-01-01

Full Text Available Thermodynamic calculations of the Fe-Cr-N System in the region of the Gas Phase Equilibria have been compared with experimental results of maximum nitrogen absorption during nitriding of two Martensitic Stainless Steels (a 6 mm thick sheet of AISI 410S steel and green powder compacts of AISI 434L steel under N2 atmospheres. The calculations have been performed combining the Fe-Cr-N System description contained in the SGTE Solid Solution Database and the gas phase for the N System contained in the SGTE Substances Database. Results show a rather good agreement for total nitrogen absorption in the steel and nitrogen solubility in austenite in the range of temperatures between 1273 K and 1473 K and in the range of pressures between 0.1 and 0.36 MPa. Calculations show that an appropriate choice of heat treatment parameters can lead to optimal nitrogen absorption in the alloy. It was observed in the calculations that an increased pressure stabilizes CrN at expenses of Cr2N - type nitrides.

Nitriding behavior of Ni and Ni-based binary alloys

Energy Technology Data Exchange (ETDEWEB)

Fonovic, Matej

2015-01-15

Gaseous nitriding is a prominent thermochemical surface treatment process which can improve various properties of metallic materials such as mechanical, tribological and/or corrosion properties. This process is predominantly performed by applying NH{sub 3}+H{sub 2} containing gas atmospheres serving as the nitrogen donating medium at temperatures between 673 K and 873 K (400 C and 600 C). NH{sub 3} decomposes at the surface of the metallic specimen and nitrogen diffuses into the surface adjacent region of the specimen whereas hydrogen remains in the gas atmosphere. One of the most important parameters characterizing a gaseous nitriding process is the so-called nitriding potential (r{sub N}) which determines the chemical potential of nitrogen provided by the gas phase. The nitriding potential is defined as r{sub N} = p{sub NH{sub 3}}/p{sub H{sub 2}{sup 3/2}} where p{sub NH{sub 3}} and p{sub H{sub 2}} are the partial pressures of the NH{sub 3} and H{sub 2} in the nitriding atmosphere. In contrast with nitriding of α-Fe where the nitriding potential is usually in the range between 0.01 and 1 atm{sup -1/2}, nitriding of Ni and Ni-based alloys requires employing nitriding potentials higher than 100 atm{sup -1/2} and even up to ∞ (nitriding in pure NH{sub 3} atmosphere). This behavior is compatible with decreased thermodynamic stability of the 3d-metal nitrides with increasing atomic number. Depending on the nitriding conditions (temperature, nitriding potential and treatment time), different phases are formed at the surface of the Ni-based alloys. By applying very high nitriding potential, formation of hexagonal Ni{sub 3}N at the surface of the specimen (known as external nitriding) leads to the development of a compound layer, which may improve tribological properties. Underneath the Ni{sub 3}N compound layer, two possibilities exist: (i) alloying element precipitation within the nitrided zone (known as internal nitriding) and/or (ii) development of metastable and

Development of pseudocapacitive molybdenum oxide–nitride for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Ting, Yen-Jui Bernie [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Wu, Haoran [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Kherani, Nazir P. [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Lian, Keryn, E-mail: keryn.lian@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada)

2015-03-15

A thin film Mo oxide–nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 °C) thermal nitridation. Two nitridation environments, N{sub 2} and NH{sub 3}, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N{sub 2}. However, the electrochemical analyses showed that the surface of the N{sub 2}-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH{sub 3}. Cycle life of the resultant N{sub 2}-treated Mo oxide–nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide–nitride electrodes was demonstrated and showed high rate performance. - Highlights: • Mo(O,N){sub x} was developed by electrodeposition and nitridation in N{sub 2} or NH{sub 3}. • N{sub 2} treated Mo(O,N){sub x} showed a capacitive performance superior to that treated by NH{sub 3}. • The promising electrochemical performance was due to the formation of γ-Mo{sub 2}N.

EISCAT measurements of ion temperatures which indicate non-isotropic ion velocity distributions

International Nuclear Information System (INIS)

Perraut, S.; Brekke, A.; Hubert, D.

1984-01-01

Substantial increases of the ion temperature can be observed at high latitudes as a consequence of strong convection electric fields. We have measured, with EISCAT, three independent components of the ion velocity vector and temperature in the same scattering volume, at about 300 km. During periods of strong variations in ion velocity (consequently of the E-field), the ion temperatures derived at the 3 sites are different. This difference, which appears to be systematic for the two experiments studied, can be interpreted in terms of different ion temperature perpendicular and parallel to the magnetic field, i.e. Tsub(i perpendicular) greater than Tsub(i parallel). Assuming that a bi-Maxwellian distribution is present for convection electric field strengths as large as 50 mV m -1 , one obtains an anisotropy factor of approximately 1.5. It also appears that resonant charge exchange is the dominant collision process. During the evening sector events studied, the electron density was decreasing, whereas the electron temperature was generally increasing. Such events are strongly related to variations in the magnetic H component detected on the ground. (author)

Iron-based alloy and nitridation treatment for PEM fuel cell bipolar plates

Science.gov (United States)

Brady, Michael P [Oak Ridge, TN; Yang, Bing [Oak Ridge, TN; Maziasz, Philip J [Oak Ridge, TN

2010-11-09

A corrosion resistant electrically conductive component that can be used as a bipolar plate in a PEM fuel cell application is composed of an alloy substrate which has 10-30 wt. % Cr, 0.5 to 7 wt. % V, and base metal being Fe, and a continuous surface layer of chromium nitride and vanadium nitride essentially free of base metal. A oxide layer of chromium vanadium oxide can be disposed between the alloy substrate and the continuous surface nitride layer. A method to prepare the corrosion resistant electrically conductive component involves a two-step nitridization sequence by exposing the alloy to a oxygen containing gas at an elevated temperature, and subsequently exposing the alloy to an oxygen free nitrogen containing gas at an elevated temperature to yield a component where a continuous chromium nitride layer free of iron has formed at the surface.

Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

International Nuclear Information System (INIS)

Nistor, L C; Nistor, S V; Dinca, G; Georgeoni, P; Landuyt, J van; Manfredotti, C; Vittone, E

2002-01-01

High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp 3 bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m -2 is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond

Green synthesis of graphitic carbon nitride nanodots using sodium chloride template

Energy Technology Data Exchange (ETDEWEB)

Yuan, Bo [National University of Defense Technology, College of Science (China); Zou, Xianshuai; Yan, Tingnan; Fei, Junjie [Xiangtan University, College of Chemistry (China); Chu, Zengyong, E-mail: chuzy@nudt.edu.cn [National University of Defense Technology, College of Science (China)

2016-05-15

Graphitic carbon nitride (g-C{sub 3}N{sub 4}) nanodots are simply prepared by a thermal treatment of dicyandiamide (DCDA) confined within NaCl templates. Cyano groups are introduced to the nanodots due to the catalytic effect of NaCl. NaCl could facilitate the polymerization of DCDA at lower temperatures, but will promote the decomposition when the temperature is above 550 °C. Thermal treatment at 600 °C for 30 min is the optimal condition for the scalable synthesis of g-C{sub 3}N{sub 4} nanodots with an average diameter of ~9 nm. g-C{sub 3}N{sub 4} nanodots have a higher band gap of 3.1 eV, which can emit bright blue light due to the decreased diameter, the introduction of cyano groups, and the incorporation of some sodium ions. The residue sodium ions and the cyano groups might lead to the local distortion of the graphitic crystals, or act as recombination centers for the enhanced photoluminescence.Graphical Abstract.

Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun

International Nuclear Information System (INIS)

Shen Liru; Fu, Ricky K.Y.; Chu, Paul K.

2004-01-01

Aluminum nitride (AlN) is of interest in the industry because of its excellent electronic, optical, acoustic, thermal, and mechanical properties. In this work, aluminum nitride films are deposited on silicon wafers (100) by metal plasma immersion ion implantation and deposition (PIIID) using a modified hybrid gas-metal cathodic arc plasma source and with no intentional heating to the substrate. The mixed metal and gaseous plasma is generated by feeding the gas into the arc discharge region. The deposition rate is found to mainly depend on the Al ion flux from the cathodic arc source and is only slightly affected by the N 2 flow rate. The AlN films fabricated by this method exhibit a cubic crystalline microstructure with stable and low internal stress. The surface of the AlN films is quite smooth with the surface roughness on the order of 1/2 nm as determined by atomic force microscopy, homogeneous, and continuous, and the dense granular microstructures give rise to good adhesion with the substrate. The N to Al ratio increases with the bias voltage applied to the substrates. A fairly large amount of O originating from the residual vacuum is found in the samples with low N:Al ratios, but a high bias reduces the oxygen concentration. The compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800 deg. C for 1 h. Our hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasmas

Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

Energy Technology Data Exchange (ETDEWEB)

Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

2017-05-12

The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

Capacitive performance of molybdenum nitride/titanium nitride nanotube array for supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Xie, Yibing, E-mail: ybxie@seu.edu.cn; Tian, Fang

2017-01-15

Highlights: • MoN{sub x}/TiN NTA is fully converted from MoO{sub 2}/TiO{sub 2} NTA by one-step nitridation process. • MoN{sub x}/TiN NTA is used as feasible electrode material of high-performance supercapacitor. • MoN{sub x}/TiN NTA shows high capacitance, rate capability and cycling stability. - Abstract: Molybdenum nitride (MoN{sub x}) depositing on titanium nitride nanotube array (TiN NTA) was designed as MoN{sub x}/TiN NTA for supercapacitor electrode material. MoN{sub x}/TiN NTA was fabricated by electrodepositing molybdenum oxide onto titanium dioxide NTA and one-step nitridation treatment in ammonia. MoN{sub x}/TiN NTA involved top-surface layer of MoN{sub x} nanoparticles and underlying layer of TiN NTA, which contributed to electric double layer capacitance in aqueous lithium-ion electrolyte solution. The specific capacitance was increased from 69.05 mF cm{sup −2} for TiN NTA to 121.50 mF cm{sup −2} for MoN{sub x}/TiN NTA at 0.3 mA cm{sup −2}, presenting the improved capacitance performance. MoN{sub x} exhibited the capacitance of 174.83 F g{sup −1} at 1.5 A g{sup −1} and slightly declined to 109.13 F g{sup −1} at 30 A g{sup −1}, presenting high rate capability. MoN{sub x}/TiN NTA exhibited the capacitance retention ratio of 93.8% at 3.0 mA cm{sup −2} after 1000 cycles, presenting high cycling stability. MoN{sub x}/TiN NTA could act as a promising electrode material of supercapacitor.

Mechanical properties of molybdenum-titanium alloys micro-structurally controlled by multi-step internal nitriding

International Nuclear Information System (INIS)

Nagae, M.; Yoshio, T.; Takemoto, Y.; Takada, J.; Hiraoka, Y.

2001-01-01

Internally nitrided dilute Mo-Ti alloys having a heavily deformed microstructure near the specimen surface were prepared by a novel two-step nitriding process at 1173 to 1773 K in N 2 gas. For the nitrided specimens three-point bend tests were performed at temperatures from 77 to 298 K in order to investigate the effect of microstructure control by internal nitriding on the ductile-to-brittle transition temperature (DBTT) of the alloy Yield strength obtained at 243 K of the specimen maintaining the deformed microstructure by the two-step nitriding was about 1.7 times as much as recrystallized specimen. The specimen subjected to the two-step nitriding was bent more than 90 degree at 243 K, whereas recrystallized specimen was fractured after showing a slight ductility at 243 K. DBTT of the specimen subjected to the two-step nitriding and recrystallized specimen was about 153 K and 203 K, respectively. These results indicate that multi-step internal nitriding is very effective to the improvement in the embrittlement by the recrystallization of molybdenum alloys. (author)

Synthesis of Uranium nitride powders using metal uranium powders

International Nuclear Information System (INIS)

Yang, Jae Ho; Kim, Dong Joo; Oh, Jang Soo; Rhee, Young Woo; Kim, Jong Hun; Kim, Keon Sik

2012-01-01

Uranium nitride (UN) is a potential fuel material for advanced nuclear reactors because of their high fuel density, high thermal conductivity, high melting temperature, and considerable breeding capability in LWRs. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. The carbothermic reduction has an advantage in the production of fine powders. However it has many drawbacks such as an inevitable engagement of impurities, process burden, and difficulties in reusing of expensive N 15 gas. Manufacturing concerns issued in the carbothermic reduction process can be solved by changing the starting materials from oxide powder to metals. However, in nitriding process of metal, it is difficult to obtain fine nitride powders because metal uranium is usually fabricated in the form of bulk ingots. In this study, a simple reaction method was tested to fabricate uranium nitride powders directly from uranium metal powders. We fabricated uranium metal spherical powder and flake using a centrifugal atomization method. The nitride powders were obtained by thermal treating those metal particles under nitrogen containing gas. We investigated the phase and morphology evolutions of powders during the nitriding process. A phase analysis of nitride powders was also a part of the present work

Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface

International Nuclear Information System (INIS)

Park, Young-Bae; Rhee, Shi-Woo

2001-01-01

Microstructure and initial growth characteristics of the hydrogenated microcrystalline Si (μc-Si:H) films grown on hydrogenated amorphous silicon nitride (a-SiN x :H) surface at low temperature were investigated using high resolution transmission electron microscope and micro-Raman spectroscopy. With increasing the Si and Si - H contents in the SiN x :H surfaces, μc-Si crystallites, a few nanometers in size, were directly grown on amorphous nitride surfaces. It is believed that the crystallites were grown through the nucleation and phase transition from amorphous to crystal in a hydrogen-rich ambient of gas phase and growing surface. The crystallite growth characteristics on the dielectric surface were dependent on the stoichiometric (x=N/Si) ratio corresponding hydrogen bond configuration of the SiN x :H surface. Surface facetting and anisotropic growth of the Si crystallites resulted from the different growth rate on the different lattice planes of Si. No twins and stacking faults were observed in the (111) lattice planes of the Si crystallites surrounding the a-Si matrix. This atomic-scale structure was considered to be the characteristic of the low temperature crystallization of the μc-Si:H by the strain relaxation of crystallites in the a-Si:H matrix. [copyright] 2001 American Institute of Physics

New Routes to Lanthanide and Actinide Nitrides

Energy Technology Data Exchange (ETDEWEB)

Butt, D.P.; Jaques, B.J.; Osterberg, D.D. [Boise State University, 1910 University Dr., Boise, Idaho 83725-2075 (United States); Marx, B.M. [Concurrent Technologies Corporation, Johnstown, PA (United States); Callahan, P.G. [Carnegie Mellon University, Pittsburgh, PA (United States); Hamdy, A.S. [Central Metallurgical R and D Institute, Helwan, Cairo (Egypt)

2009-06-15

The future of nuclear energy in the U.S. and its expansion worldwide depends greatly on our ability to reduce the levels of high level waste to minimal levels, while maintaining proliferation resistance. Implicit in the so-called advanced fuel cycle is the need for higher levels of fuel burn-up and consequential use of complex nuclear fuels comprised of fissile materials such as Pu, Am, Np, and Cm. Advanced nitride fuels comprised ternary and quaternary mixtures of uranium and these actinides have been considered for applications in advanced power plants, but there remain many processing challenges as well as necessary qualification testing. In this presentation, the advantages and disadvantages of nitride fuels are discussed. Methods of synthesizing the raw materials and sintering of fuels are described including a discussion of novel, low cost routes to nitrides that have the potential for reducing the cost and footprint of a fuel processing plant. Phase pure nitrides were synthesized via four primary methods; reactive milling metal flakes in nitrogen at room temperature, directly nitriding metal flakes in a pure nitrogen atmosphere, hydriding metal flakes prior to nitridation, and carbo-thermically reducing the metal oxide and carbon mixture prior to nitridation. In the present study, the sintering of UN, DyN, and their solid solutions (U{sub x}, Dy{sub 1-x}) (x = 1 to 0.7) were also studied. (authors)

High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

Science.gov (United States)

Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

2018-06-01

The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

Ion temperature anisotropy limitation in high beta plasmas

International Nuclear Information System (INIS)

Scime, Earl E.; Keiter, Paul A.; Balkey, Matthew M.; Boivin, Robert F.; Kline, John L.; Blackburn, Melanie; Gary, S. Peter

2000-01-01

Measurements of parallel and perpendicular ion temperatures in the Large Experiment on Instabilities and Anisotropies (LEIA) space simulation chamber display an inverse correlation between the upper bound on the ion temperature anisotropy and the parallel ion beta (β=8πnkT/B 2 ). Fluctuation measurements indicate the presence of low frequency, transverse, electromagnetic waves with wave numbers and frequencies that are consistent with predictions for Alfven Ion Cyclotron instabilities. These observations are also consistent with in situ spacecraft measurements in the Earth's magnetosheath and with a theoretical/computational model that predicts that such an upper bound on the ion temperature anisotropy is imposed by scattering from enhanced fluctuations due to growth of the Alfven ion cyclotron instability. (c) 2000 American Institute of Physics

Young's modulus and fracture toughness of silicon nitride ceramics at elevated temperature

Energy Technology Data Exchange (ETDEWEB)

Rouxel, T. [Rennes Univ. (France). Lab. de Recherche en Mecanique Applicee

2002-07-01

The temperature dependencies of Young's modulus (E) and fracture toughness (K{sub 1c}) of several silicon nitride-based monolithic and composite materials, are reviewed. A transition range is observed between 1130 and 1180 C on the E(T) curves, which is systematically 150 to 200 C above the T{sub g} of oxynitride glasses of composition close to that of the intergranular glassy pockets. It is thus supposed that this transition reflects the behaviour of the interfacial glassy films. The higher the glassy phase content, the higher is the temperature sensitivity. The presence of SiC particles greatly attenuates the sensitivity. Thus, Young's modulus decreases more slowly with temperature and fracture toughness changes little up to 1300 C. The K{sub 1c} (T) curves exhibit four different stages which are discussed and interpreted on the basis of a theoretical model. (orig.)

Microstructural characterization of pulsed plasma nitrided 316L stainless steel

International Nuclear Information System (INIS)

Asgari, M.; Barnoush, A.; Johnsen, R.; Hoel, R.

2011-01-01

Highlights: → The low temperature pulsed plasma nitrided layer of 316 SS was studied. → The plastic deformation induced in the austenite due to nitriding is characterized by EBSD at different depths (i.e., nitrogen concentration). → Nanomechanical properties of the nitride layer was investigated by nanoindentation at different depths (i.e., nitrogen concentration). → High hardness, high nitrogen concentration and high dislocation density is detected in the nitride layer. → The hardness and nitrogen concentration decreased sharply beyond the nitride layer. - Abstract: Pulsed plasma nitriding (PPN) treatment is one of the new processes to improve the surface hardness and tribology behavior of austenitic stainless steels. Through low temperature treatment (<440 deg. C), it is possible to obtain unique combinations of wear and corrosion properties. Such a combination is achieved through the formation of a so-called 'extended austenite phase'. These surface layers are often also referred to as S-phase, m-phase or γ-phase. In this work, nitrided layers on austenitic stainless steels AISI 316L (SS316L) were examined by means of a nanoindentation method at different loads. Additionally, the mechanical properties of the S-phase at different depths were studied. Electron back-scatter diffraction (EBSD) examination of the layer showed a high amount of plasticity induced in the layer during its formation. XRD results confirmed the formation of the S-phase, and no deleterious CrN phase was detected.

The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

International Nuclear Information System (INIS)

Mitchell, D.R.G.; Stott, F.H.

1992-01-01

A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

Study of the dissolution of uranium nitrides in nitric acid by measuring the isotope ratios, 15N/14N, of the formed products

International Nuclear Information System (INIS)

Hadibi-Olschewski, Nathalie

1991-01-01

The aim of this study was to investigate the dissolution behavior of nitride fuels in nitric acid. The use of nitride fuels in nuclear reactor has many advantages compared with the oxide fuels. One problem in employing nitrides as fuels is the formation of radio-toxic 14 C upon irradiation of natural nitrogen ( 14 N:99.64 pc, 15 N:0.36 pc) in a nuclear reactor ( 14 N (n,p) 14 C reaction). The use of 15 N-enriched fuels avoids these drawbacks. This study was undertaken so as to better understand the mechanisms of the dissolution process and also to follow the distribution of the expensive nitrogen isotope 15 N from the point of view of its behaviour during the recycling process. This study is based on previous work, where the evolution of the nitrogen compounds formed during the dissolution was measured as a function of time for different dissolution parameters. Using 15 N-enriched uranium nitrides or 15 N-enriched nitric acid, two methods were developed to study the influence of the dissolution parameters, nitric acid temperature and concentration, on the 15 N/ 14 N ratios of the nitrogen, nitrogen oxides and ammonium ions utilising a coupled gas-chromatograph/mass spectrometer. The main results are: - similar isotopic composition for NH 4 + and UN; - mixed 14 N/ 15 N composition for N 2 and N 2 O; - similar isotopic composition for NO, NO 2 and HNO 3 ; - no influence of the dissolution parameters on the isotopic composition of the products; an exception maybe made for the N 2 case, which contains more 15 N with increasing acidity and temperature. This work confirms that the first dissolution step is the oxidation of UN with HNO 3 to form NH 4 + and HNO 2 and that HNO 2 has a catalytic role in the dissolution to form other products. And we can conclude that to recycle 15 N, the ammonium ions must be recycled, at least for the case where nitrides are dissolved directly in HNO 3 . (author) [fr

Alkaline fuel cell with nitride membrane

Science.gov (United States)

Sun, Shen-Huei; Pilaski, Moritz; Wartmann, Jens; Letzkus, Florian; Funke, Benedikt; Dura, Georg; Heinzel, Angelika

2017-06-01

The aim of this work is to fabricate patterned nitride membranes with Si-MEMS-technology as a platform to build up new membrane-electrode-assemblies (MEA) for alkaline fuel cell applications. Two 6-inch wafer processes based on chemical vapor deposition (CVD) were developed for the fabrication of separated nitride membranes with a nitride thickness up to 1 μm. The mechanical stability of the perforated nitride membrane has been adjusted in both processes either by embedding of subsequent ion implantation step or by optimizing the deposition process parameters. A nearly 100% yield of separated membranes of each deposition process was achieved with layer thickness from 150 nm to 1 μm and micro-channel pattern width of 1μm at a pitch of 3 μm. The process for membrane coating with electrolyte materials could be verified to build up MEA. Uniform membrane coating with channel filling was achieved after the optimization of speed controlled dip-coating method and the selection of dimethylsulfoxide (DMSO) as electrolyte solvent. Finally, silver as conductive material was defined for printing a conductive layer onto the MEA by Ink-Technology. With the established IR-thermography setup, characterizations of MEAs in terms of catalytic conversion were performed successfully. The results of this work show promise for build up a platform on wafer-level for high throughput experiments.

Ion-ion dynamic structure factor, acoustic modes, and equation of state of two-temperature warm dense aluminum

Science.gov (United States)

Harbour, L.; Förster, G. D.; Dharma-wardana, M. W. C.; Lewis, Laurent J.

2018-04-01

The ion-ion dynamical structure factor and the equation of state of warm dense aluminum in a two-temperature quasiequilibrium state, with the electron temperature higher than the ion temperature, are investigated using molecular-dynamics simulations based on ion-ion pair potentials constructed from a neutral pseudoatom model. Such pair potentials based on density functional theory are parameter-free and depend directly on the electron temperature and indirectly on the ion temperature, enabling efficient computation of two-temperature properties. Comparison with ab initio simulations and with other average-atom calculations for equilibrium aluminum shows good agreement, justifying a study of quasiequilibrium situations. Analyzing the van Hove function, we find that ion-ion correlations vanish in a time significantly smaller than the electron-ion relaxation time so that dynamical properties have a physical meaning for the quasiequilibrium state. A significant increase in the speed of sound is predicted from the modification of the dispersion relation of the ion acoustic mode as the electron temperature is increased. The two-temperature equation of state including the free energy, internal energy, and pressure is also presented.

Synthesis of hexagonal boron nitride graphene-like few layers

Science.gov (United States)

Yuan, S.; Toury, B.; Journet, C.; Brioude, A.

2014-06-01

Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction.Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr01017e

Methods for improved growth of group III nitride buffer layers

Science.gov (United States)

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

2014-07-15

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

Helicon plasma ion temperature measurements and observed ion cyclotron heating in proto-MPEX

Science.gov (United States)

Beers, C. J.; Goulding, R. H.; Isler, R. C.; Martin, E. H.; Biewer, T. M.; Caneses, J. F.; Caughman, J. B. O.; Kafle, N.; Rapp, J.

2018-01-01

The Prototype-Material Plasma Exposure eXperiment (Proto-MPEX) linear plasma device is a test bed for exploring and developing plasma source concepts to be employed in the future steady-state linear device Material Plasma Exposure eXperiment (MPEX) that will study plasma-material interactions for the nuclear fusion program. The concept foresees using a helicon plasma source supplemented with electron and ion heating systems to reach necessary plasma conditions. In this paper, we discuss ion temperature measurements obtained from Doppler broadening of spectral lines from argon ion test particles. Plasmas produced with helicon heating alone have average ion temperatures downstream of the Helicon antenna in the range of 3 ± 1 eV; ion temperature increases to 10 ± 3 eV are observed with the addition of ion cyclotron heating (ICH). The temperatures are higher at the edge than the center of the plasma either with or without ICH. This type of profile is observed with electrons as well. A one-dimensional RF antenna model is used to show where heating of the plasma is expected.

Effect of the diameter and depth of pinholes on surface characteristics in the DC pulse plasma nitriding process

International Nuclear Information System (INIS)

Calahonra, M.C.G; Egidi, D.A; Svoboda, H; Corengia, P

2006-01-01

The ion nitriding treatment is a process widely used in steel alloys to improve the material's properties; such as surface hardness, resistance to wear, fatigue life and resistance to corrosion. But geometric changes in the components can produce during the nitriding process different effects on the behavior of the plasma, such as local variations in the electric field, an empty cathode effect, etc. These in turn can affect among other factors the local temperature and therefore the kinetics of the process, generating variations in the compound layer thicknesses and zone of diffusion, and micro-hardness profile. These heterogeneities limit the effectiveness of the plasma nitriding process, where control and duplication of the surface modification are most important. This work aims to study the effect of the geometry of the pieces treated with ionic nitriding, especially the effect of the orifices. An understanding of the operating mechanisms is sought in order to predict the development of the compound layer and zone of diffusion inside the pinholes. A series of orifices with different diameters and depths were machine made in AISI 4140 quenched and tempered cylindrical steel test pieces. The diameters analyzed were 2, 4, 6, 10 and 12 mm, while the depths studied were 3, 8 and 15 mm, resulting in 15 different configurations. The samples were nitrided by DC-pulse plasma in an industrial reactor, using a mixture of 75% H 2 - 25% N 2 , during 15 hours at a temperature of 500 o C. The nitrided test pieces were characterized with transverse sections using optic and scanning electron microscopy and Vickers micro-hardness profiles, measuring the thicknesses of white layer and zone of diffusion on the wall and base of the orifices. The results show that the sizes of the pinholes made in AISI 4140 steel greatly influence the uniformity and continuity of the compound layers and zones of diffusion. 'Critical diameters' for pinholes were also defined, underneath which the

In situ x-ray diffraction investigations during low energy ion nitriding of austenitic stainless steel grade 1.4571

International Nuclear Information System (INIS)

Manova, D; Mändl, S; Gerlach, J W; Hirsch, D; Neumann, H; Rauschenbach, B

2014-01-01

Insertion of nitrogen into austenitic stainless steel leads to anomalously fast nitrogen diffusion and the formation of an expanded face-centred cubic phase which is known to contain a large amount of mechanical stress. In situ x-ray diffraction (XRD) measurements during low energy nitrogen ion implantation into steel 316Ti at 300–550 °C allow a direct view into diffusion and phase formation. While the layer growth is directly observable from the decreasing substrate reflection intensity, the time evolution of the intensities for the expanded phase reflection is much more complex: several mechanisms including at least formation and annealing of defects, twinning, reduction of the crystal symmetry, or grain rotation may be active inside the expanded phase, besides the thermally activated decay of the metastable expanded phase. This locally varying coherence length or scattering intensity from the expanded phase is furthermore a function of temperature and time, additionally complicating the deconvolution of XRD spectra for stress and concentration gradients. As no concise modelling of this coherence length is possible at present, a simple qualitative model assuming a dependence of the scattering intensity on the depth, influence by stress and plastic flow during the nitriding process is proposed for understanding the underlying processes. (paper)

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

Science.gov (United States)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Mechanisms of hydrogen retention in metallic beryllium and beryllium oxide and properties of ion-induced beryllium nitride; Rueckhaltemechanismen fuer Wasserstoff in metallischem Beryllium und Berylliumoxid sowie Eigenschaften von ioneninduziertem Berylliumnitrid

Energy Technology Data Exchange (ETDEWEB)

Oberkofler, Martin

2011-09-22

In the framework of this thesis laboratory experiments on atomically clean beryllium surfaces were performed. They aim at a basic understanding of the mechanisms occurring upon interaction of a fusion plasma with a beryllium first wall. The retention and the temperature dependent release of implanted deuterium ions are investigated. An atomistic description is developed through simulations and through the comparison with calculations based on density functional theory. The results of these investigations are compared to the behaviour of hydrogen upon implantation into thermally grown beryllium oxide layers. Furthermore, beryllium nitride is produced by implantation of nitrogen into metallic beryllium and its properties are investigated. The results are interpreted with regard to the use of beryllium in a fusion reactor. (orig.)

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Energy Technology Data Exchange (ETDEWEB)

Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

2008-01-01

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Energy Technology Data Exchange (ETDEWEB)

R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

2008-05-01

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

Molecular dynamics studies of actinide nitrides

International Nuclear Information System (INIS)

Kurosaki, Ken; Uno, Masayoshi; Yamanaka, Shinsuke; Minato, Kazuo

2004-01-01

The molecular dynamics (MD) calculation was performed for actinide nitrides (UN, NpN, and PuN) in the temperature range from 300 to 2800 K to evaluate the physical properties viz., the lattice parameter, thermal expansion coefficient, compressibility, and heat capacity. The Morse-type potential function added to the Busing-Ida type potential was employed for the ionic interactions. The interatomic potential parameters were determined by fitting to the experimental data of the lattice parameter. The usefulness and applicability of the MD method to evaluate the physical properties of actinide nitrides were studied. (author)

In Situ Monitoring of Temperature inside Lithium-Ion Batteries by Flexible Micro Temperature Sensors

Directory of Open Access Journals (Sweden)

Pei-Chi Chen

2011-10-01

Full Text Available Lithium-ion secondary batteries are commonly used in electric vehicles, smart phones, personal digital assistants (PDA, notebooks and electric cars. These lithium-ion secondary batteries must charge and discharge rapidly, causing the interior temperature to rise quickly, raising a safety issue. Over-charging results in an unstable voltage and current, causing potential safety problems, such as thermal runaways and explosions. Thus, a micro flexible temperature sensor for the in in-situ monitoring of temperature inside a lithium-ion secondary battery must be developed. In this work, flexible micro temperature sensors were integrated into a lithium-ion secondary battery using the micro-electro-mechanical systems (MEMS process for monitoring temperature in situ.

Low temperature aluminum nitride thin films for sensory applications

Energy Technology Data Exchange (ETDEWEB)

Yarar, E.; Zamponi, C.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Institute for Materials Science, Chair for Inorganic Functional Materials, Kiel University, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Institute for Materials Science, Chair for Synthesis and Real Structure, Kiel University, D-24143 Kiel (Germany)

2016-07-15

A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

Innovative boron nitride-doped propellants

Directory of Open Access Journals (Sweden)

Thelma Manning

2016-04-01

Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

Plasma nitriding process by direct current glow discharge at low temperature increasing the thermal diffusivity of AISI 304 stainless steel

Energy Technology Data Exchange (ETDEWEB)

Prandel, L. V.; Somer, A.; Assmann, A.; Camelotti, F.; Costa, G.; Bonardi, C.; Jurelo, A. R.; Rodrigues, J. B.; Cruz, G. K. [Universidade Estadual de Ponta Grossa, Grupo de Espectroscopia Optica e Fotoacustica de Materiais, Departamento de Fisica, Av. Carlos Cavalcanti, 4748, CEP 84030-900, Ponta Grossa, PR (Brazil)

2013-02-14

This work reports for the first time on the use of the open photoacoustic cell technique operating at very low frequencies and at room temperature to experimentally determine the thermal diffusivity parameter of commercial AISI304 stainless steel and AISI304 stainless steel nitrided samples. Complementary measurements of X-ray diffraction and scanning electron microscopy were also performed. The results show that in standard AISI 304 stainless steel samples the thermal diffusivity is (4.0 {+-} 0.3) Multiplication-Sign 10{sup -6} m{sup 2}/s. After the nitriding process, the thermal diffusivity increases to the value (7.1 {+-} 0.5) Multiplication-Sign 10{sup -6} m{sup 2}/s. The results are being associated to the diffusion process of nitrogen into the surface of the sample. Carrying out subsequent thermal treatment at 500 Degree-Sign C, the thermal diffusivity increases up to (12.0 {+-} 2) Multiplication-Sign 10{sup -6} m{sup 2}/s. Now the observed growing in the thermal diffusivity must be related to the change in the phases contained in the nitrided layer.

Magnetic properties of Nd3(Fe,Mo)29 compound and its nitride

International Nuclear Information System (INIS)

Pan Hongge

1998-01-01

The iron-rich ternary intermetallic compound Nd 3 (Fe,Mo) 29 with the Nd 3 (Fe,Ti) 29 -type monoclinic structure and its nitride were prepared. After nitrogenation, the nitride retains the structure of the parent compound, but the unit-cell volume of the nitride is 5.9% greater than that of the parent compound. The Curie temperature of Nd 3 (Fe,Mo) 29 nitride is 70.9% higher than that of the parent compound and the saturation magnetization of the nitride is about 6.6% (at 4.2 K) and 23.7% (at 300 K) higher than that of the parent compound. The anisotropy of the nitride is similar to that of parent compound, which exhibits plane anisotropy. (orig.)

Ion temperatures in TORTUR III

International Nuclear Information System (INIS)

Hendriks, F.B.

1985-12-01

Spatially resolved ion-energy distributions are presented for discharges in the TORTUR III tokamak. The measurements are performed in an active method, using a neutral hydrogen probing beam of 20-30 keV, to enhance charge-exchange processes along its path, as well as by the usual passive method. Ion temperatures can amount up to 1 keV

Physical and Tribological Properties of Nitrided AISI 316 Stainless Steel Balls

Directory of Open Access Journals (Sweden)

Yang Shicai

2016-01-01

Full Text Available AISI 316 austenitic stainless steel balls (diameters 5.0 and 12.0 mm, typical hardness 250 HV0.3 and flat samples (20×20×2.0 mm were nitrided by a pulsed glow discharge Ar/N2 plasma. Hardness of the ball surfaces was analysed using Vickers indentation. Thermal stability of the nitrided balls (diameter 12.0 mm was studied using a furnace to heat them in air for 8 hours at temperatures up to 700.0°C and then, after cooling to room temperature, the surface hardness of the heated balls was re-measured. Scanning electron microscopy and X-ray diffraction were used to study the microstructures, composition and phase formation of the nitrided sublayers. Unlubricated pin-on-disc wear testing was used to evaluate the wear resistance of nitrided stainless steel balls (5.0 mm diameter and the results were compared with similar testing on hardened Cr-Steel balls (5 mm diameter with hardness of about 650 HV0.3. All the test results indicated that the nitrided AISI 316 austenitic stainless steel balls have advantages over the hardened Cr-Steel balls in terms of retaining high hardness after heat treatment and high resistance to sliding wear at room temperature under higher counterpart stress. These properties are expected to be beneficial for wide range of bearing applications.

Surface depression of glass and surface swelling of ceramics induced by ion implantation

International Nuclear Information System (INIS)

Ikeyama, Masami; Saitoh, Kazuo; Nakao, Setsuo; Niwa, Hiroaki; Tanemura, Seita; Miyagawa, Yoshiko; Miyagawa, Souji

1994-01-01

By the measurement of the change of the surface shapes of the glass and ceramics in which ion implantation was performed, it was clarified that glass surface was depressed, and ceramic surface swelled. These depression and swelling changed according to the kinds of ions, energy and the amount to be implanted and the temperature of samples. It became clear that the depression of glass surface was nearly proportional to the range of flight of the implanted ions, and the swelling of ceramic surface showed different state in the silicon nitride with strong covalent bond and the alumina and sapphire with strong ionic bond. For the improvement of the mechanical characteristics of solid materials such as hardness, strength, toughness, wear resistance, oxidation resistance and so on, attention has been paid to the surface reforming by high energy ion implantation at MeV level. The change of shapes of base materials due to ion implantation is not always negligible. The experiment was carried out on sintered silicon nitride and alumina, polished sapphire single crystals and quartz glass. The experimental method and the results are reported. (K.I.)

The Effect of Storm Driver and Intensity on Magnetospheric Ion Temperatures

Science.gov (United States)

Keesee, Amy M.; Katus, Roxanne M.; Scime, Earl E.

2017-09-01

Energy deposited in the magnetosphere during geomagnetic storms drives ion heating and convection. Ions are also heated and transported via internal processes throughout the magnetosphere. Injection of the plasma sheet ions to the inner magnetosphere drives the ring current and, thus, the storm intensity. Understanding the ion dynamics is important to improving our ability to predict storm evolution. In this study, we perform superposed epoch analyses of ion temperatures during storms, comparing ion temperature evolution by storm driver and storm intensity. The ion temperatures are calculated using energetic neutral atom measurements from the Two Wide-Angle Imaging Neutral-Atom Spectrometers (TWINS) mission. The global view of these measurements provide both spatial and temporal information. We find that storms driven by coronal mass ejections (CMEs) tend to have higher ion temperatures throughout the main phase than storms driven by corotating interaction regions (CIRs) but that the temperatures increase during the recovery phase of CIR-driven storms. Ion temperatures during intense CME-driven storms have brief intervals of higher ion temperatures than those during moderate CME-driven storms but have otherwise comparable ion temperatures. The highest temperatures during CIR-driven storms are centered at 18 magnetic local time and occur on the dayside for moderate CME-driven storms. During the second half of the main phase, ion temperatures tend to decrease in the postmidnight to dawn sector for CIR storms, but an increase is observed for CME storms. This increase begins with a sharp peak in ion temperatures for intense CME storms, likely a signature of substorm activity that drives the increased ring current.

The BEAN experiment - An EISCAT study of ion temperature anisotropies

Directory of Open Access Journals (Sweden)

I. W. McCrea

Full Text Available Results are presented from a novel EISCAT special programme, SP-UK-BEAN, intended for the direct measurement of the ion temperature anisotropy during ion frictional heating events in the high-latitude F-region. The experiment employs a geometry which provides three simultaneous estimates of the ion temperature in a single F-region observing volume at a range of aspect angles from 0° to 36°. In contrast to most previous EISCAT experiments to study ion temperature anisotropies, field-aligned observations are made using the Sodankylä radar, while the Kiruna radar measures at an aspect angle of the order of 30°. Anisotropic effects can thus be studied within a small common volume whose size and altitude range is limited by the radar beamwidth, rather than in volumes which overlap but cover different altitudes. The derivation of line-of-sight ion temperature is made more complex by the presence of an unknown percentage of atomic and molecular ions at the observing altitude and the possibility of non-Maxwellian distortion of the ion thermal velocity distribution. The first problem has been partly accounted for by insisting that a constant value of electron temperature be maintained. This enables an estimate of the ion composition to be made, and facilitates the derivation of more realistic line-of-sight ion temperatures and temperature anisotropies. The latter problem has been addressed by assuming that the thermal velocity distribution remains bi-Maxwellian. The limitations of these approaches are discussed. The ion temperature anisotropies and temperature partition coefficients during two ion heating events give values intermediate between those expected for atomic and for molecular species. This result is consistent with an analysis which indicates that significant proportions of molecular ions (up to 50% were present at the times of greatest heating.

Electron temperature effects for an ion beam source

International Nuclear Information System (INIS)

Uramoto, Joshin.

1979-05-01

A hydrogen high temperature plasma up to 200 eV is produced by acceleration of electrons in a hot hollow cathode discharge and is used as an ion beam source. Then, two characteristics are observed: A rate of the atomic ion (H + ) number increases above 70%. A perveance of the ion beam increases above 30 times compared with that of a cold plasma, while a floating potential of an ion acceleration electrode approaches an ion acceleration potential (- 500 V) according as an increment of the electron temperature. Moreover, a neutralized ion beam can be produced by only the negative floating electrode without an external power supply. (author)

First principles calculations of interstitial and lamellar rhenium nitrides

Energy Technology Data Exchange (ETDEWEB)

Soto, G., E-mail: gerardo@cnyn.unam.mx [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico); Tiznado, H.; Reyes, A.; Cruz, W. de la [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico)

2012-02-15

Highlights: Black-Right-Pointing-Pointer The possible structures of rhenium nitride as a function of composition are analyzed. Black-Right-Pointing-Pointer The alloying energy is favorable for rhenium nitride in lamellar arrangements. Black-Right-Pointing-Pointer The structures produced by magnetron sputtering are metastable variations. Black-Right-Pointing-Pointer The structures produced by high-pressure high-temperature are stable configurations. Black-Right-Pointing-Pointer The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re{sub 3}N and Re{sub 2}N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials

First principles calculations of interstitial and lamellar rhenium nitrides

International Nuclear Information System (INIS)

Soto, G.; Tiznado, H.; Reyes, A.; Cruz, W. de la

2012-01-01

Highlights: ► The possible structures of rhenium nitride as a function of composition are analyzed. ► The alloying energy is favorable for rhenium nitride in lamellar arrangements. ► The structures produced by magnetron sputtering are metastable variations. ► The structures produced by high-pressure high-temperature are stable configurations. ► The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re 3 N and Re 2 N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials within binary nitride chemistry.

Application of Self-Propagating High Temperature Synthesis to the Fabrication of Actinide Bearing Nitride and Other Ceramic Nuclear Fuels

International Nuclear Information System (INIS)

Moore, John J.; Reigel, Marissa M.; Donohoue, Collin D.

2009-01-01

The project uses an exothermic combustion synthesis reaction, termed self-propagating high-temperature synthesis (SHS), to produce high quality, reproducible nitride fuels and other ceramic type nuclear fuels (cercers and cermets, etc.) in conjunction with the fabrication of transmutation fuels. The major research objective of the project is determining the fundamental SHS processing parameters by first using manganese as a surrogate for americium to produce dense Zr-Mn-N ceramic compounds. These fundamental principles will then be transferred to the production of dense Zr-Am-N ceramic materials. A further research objective in the research program is generating fundamental SHS processing data to the synthesis of (i) Pu-Am-Zr-N and (ii) U-Pu-Am-N ceramic fuels. In this case, Ce will be used as the surrogate for Pu, Mn as the surrogate for Am, and depleted uranium as the surrogate for U. Once sufficient fundamental data has been determined for these surrogate systems, the information will be transferred to Idaho National Laboratory (INL) for synthesis of Zr-Am-N, Pu-Am-Zr-N and U-Pu-Am-N ceramic fuels. The high vapor pressures of americium (Am) and americium nitride (AmN) are cause for concern in producing nitride ceramic nuclear fuel that contains Am. Along with the problem of Am retention during the sintering phases of current processing methods, are additional concerns of producing a consistent product of desirable homogeneity, density and porosity. Similar difficulties have been experienced during the laboratory scale process development stage of producing metal alloys containing Am wherein compact powder sintering methods had to be abandoned. Therefore, there is an urgent need to develop a low-temperature or low-heat fuel fabrication process for the synthesis of Am-containing ceramic fuels. Self-propagating high temperature synthesis (SHS), also called combustion synthesis, offers such an alternative process for the synthesis of Am nitride fuels. Although SHS

Effect of ion nitriding on the crystal structure of 3 mol% Y{sub 2}O{sub 3}-doped ZrO{sub 2} thin-films prepared by the sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Ortiz, A.L. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)]. E-mail: alortiz@unex.es; Diaz-Parralejo, A. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Borrero-Lopez, O. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Guiberteau, F. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)

2006-06-30

We investigated the effect of ion nitriding on the crystal structure of 3 mol% Y{sub 2}O{sub 3}-doped ZrO{sub 2} (3YSZ) thin-films prepared by the sol-gel method. For this purpose, we used X-ray diffractometry to determine the crystalline phases, the lattice parameters, the crystal sizes, and the lattice microstrains, and glow discharge-optical emission spectroscopy to obtain the depth profiles of the elemental chemical composition. We found that nitrogen atoms substitute oxygen atoms in the 3YSZ crystal, thus leading to the formation of unsaturated-substitutional solid solutions with reduced lattice parameters and Zr{sub 0.94}Y{sub 0.06}O{sub 1.72}N{sub 0.17} stoichiometric formula. We also found that ion nitriding does not affect the grain size, but does generate lattice microstrains due to the increase in point defects in the crystalline lattice.

Radiation Damage and Fission Product Release in Zirconium Nitride

Energy Technology Data Exchange (ETDEWEB)

Egeland, Gerald W. [New Mexico Inst. of Mining and Technology, Socorro, NM (United States)

2005-08-29

Zirconium nitride is a material of interest to the AFCI program due to some of its particular properties, such as its high melting point, strength and thermal conductivity. It is to be used as an inert matrix or diluent with a nuclear fuel based on transuranics. As such, it must sustain not only high temperatures, but also continuous irradiation from fission and decay products. This study addresses the issues of irradiation damage and fission product retention in zirconium nitride through an assessment of defects that are produced, how they react, and how predictions can be made as to the overall lifespan of the complete nuclear fuel package. Ion irradiation experiments are a standard method for producing radiation damage to a surface for observation. Cryogenic irradiations are performed to produce the maximum accumulation of defects, while elevated temperature irradiations may be used to allow defects to migrate and react to form clusters and loops. Cross-sectional transmission electron microscopy and grazing-incidence x-ray diffractometry were used in evaluating the effects that irradiation has on the crystal structure and microstructure of the material. Other techniques were employed to evaluate physical effects, such as nanoindentation and helium release measurements. Results of the irradiations showed that, at cryogenic temperatures, ZrN withstood over 200 displacements per atom without amorphization. No significant change to the lattice or microstructure was observed. At elevated temperatures, the large amount of damage showed mobility, but did not anneal significantly. Defect clustering was possibly observed, yet the size was too small to evaluate, and bubble formation was not observed. Defects, specifically nitrogen vacancies, affect the mechanical behavior of ZrN dramatically. Current and previous work on dislocations shows a distinct change in slip plane, which is evidence of the bonding characteristics. The stacking-fault energy changes dramatically with

Temperature dependence of three-body ion-molecule reactions

International Nuclear Information System (INIS)

Boehringer, H.; Arnold, F.

1983-01-01

The temperature dependence of the ion-molecule association reactions (i) N 2 + + N 2 + M → N 4 + + M (M=N 2 , He), (ii) O 2 + + O 2 + M → O 4 + + M (M=O 2 , He) and (iii) He + + 2He → He 2 + + He have been studied over an extended temperature range to temperatures as low as 30K with a recently constructed liquid helium-cooled ion drift tube. Over most of the temperature range the threebody reaction rate coefficients show an inverse temperature dependence proportional to Tsup(-n) with n in the range 0.6 to 2.9. This temperature dependence is quite consistent with current theories of ion molecule association. At low temperatures, however, a deviation from the Tsup(-n) dependence was observed for the association reactions (ii). For reactions (i) different temperature dependences were obtained for N 2 and He third bodies indicating an additional temperature dependence of the collisional stabilisation process. (Authors)

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

International Nuclear Information System (INIS)

Li Yang; Wang Liang; Zhang Dandan; Shen Lie

2010-01-01

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 deg. C for 8 h in an NH 3 gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 deg. C for 8 h can produced a compound layer of 2.5 μm thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 deg. C within the same time.

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

Science.gov (United States)

Li, Yang; Wang, Liang; Zhang, Dandan; Shen, Lie

2010-11-01

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 °C for 8 h in an NH 3 gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 °C for 8 h can produced a compound layer of 2.5 μm thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 °C within the same time.

Thermo-Optic Characterization of Silicon Nitride Resonators for Cryogenic Photonic Circuits

NARCIS (Netherlands)

Elshaari, A.W.A.; Esmaeil Zadeh, I.; Jöns, K.D.; Zwiller, Val

2016-01-01

In this paper, we characterize the Thermo-optic properties of silicon nitride ring resonators between 18 and 300 K. The Thermo-optic coefficients of the silicon nitride core and the oxide cladding are measured by studying the temperature dependence of the resonance wavelengths. The resonant modes

Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

International Nuclear Information System (INIS)

Kioupakis, Emmanouil; Yan, Qimin; Steiauf, Daniel; Van de Walle, Chris G

2013-01-01

Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their performance at high power is affected by the efficiency-droop problem. Previous experimental and theoretical work has identified Auger recombination, a three-particle nonradiative carrier recombination mechanism, as the likely cause of the droop. In this work, we use first-principles calculations to elucidate the dependence of the radiative and Auger recombination rates on temperature, carrier density and quantum-well confinement. Our calculated data for the temperature dependence of the recombination coefficients are in good agreement with experiment and provide further validation on the role of Auger recombination in the efficiency reduction. Polarization fields and phase-space filling negatively impact device efficiency because they increase the operating carrier density at a given current density and increase the fraction of carriers lost to Auger recombination. (paper)

Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

Energy Technology Data Exchange (ETDEWEB)

Nistor, L C [National Institute for Materials Physics, Bucharest (Romania); Nistor, S V [National Institute for Materials Physics, Bucharest (Romania); Dinca, G [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Georgeoni, P [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Landuyt, J van [University of Antwerpen - RUCA, EMAT, Antwerpen (Belgium); Manfredotti, C [Experimental Physics Department, University of Turin, Turin (Italy); Vittone, E [Experimental Physics Department, University of Turin, Turin (Italy)

2002-11-11

High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp{sup 3} bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m{sup -2} is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.

Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

Science.gov (United States)

Gölden, D.; Hildebrandt, E.; Alff, L.

2017-01-01

A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

Syntheses, Characterization and Kinetics of Nickel-Tungsten Nitride Catalysts for Hydrotreating of Gas Oil

Science.gov (United States)

Botchwey, Christian

This thesis summarizes the methods and major findings of Ni-W(P)/gamma-Al 2O3 nitride catalyst synthesis, characterization, hydrotreating activity, kinetic analysis and correlation of the catalysts' activities to their synthesis parameters and properties. The range of parameters for catalyst synthesis were W (15-40 wt%), Ni (0-8 wt%), P (0-5 wt%) and nitriding temperature (TN) (500-900 °C). Characterization techniques used included: N2 sorption studies, chemisorption, elemental analysis, temperature programmed studies, x-ray diffraction, scanning electron microscopy, energy dispersive x-ray, infrared spectroscopy, transmission electron microscopy and x-ray absorption near edge structure. Hydrodesulfurization (HDS), hydrodenitrogenation (HDN) and hydrodearomatization (HDA) were performed at: temperature (340-380 °C), pressure (6.2-9.0 MPa), liquid hourly space velocity (1-3 h-1) and hydrogen to oil ratio (600 ml/ml, STP). The predominant species on the catalyst surface were Ni3N, W2N and bimetallic Ni2W3N. The bimetallic Ni-W nitride species was more active than the individual activities of the Ni3N and W2N. P increased weak acid sites while nitriding temperature decreased amount of strong acid sites. Low nitriding temperature enhanced dispersion of metal particles. P interacted with Al 2O3 which increased the dispersion of metal nitrides on the catalyst surface. HDN activity increased with Ni and P loading but decreased with increase in nitriding temperature (optimum conversion; 60 wt%). HDS and HDA activities went through a maximum with increase in the synthesis parameters (optimum conversions; 88. wt% for HDS and 47 wt% for HDA). Increase in W loading led to increase in catalyst activity. The catalysts were stable to deactivation and had the nitride structure conserved during hydrotreating in the presence of hydrogen sulfide. The results showed good correlation between hydrotreating activities (HDS and HDN) and the catalyst nitrogen content, number of exposed

Dissolution performance of plutonium nitride based fuel materials

Energy Technology Data Exchange (ETDEWEB)

Aneheim, E.; Hedberg, M. [Nuclear Chemistry, Chemistry and Chemical Engineering, Chalmers University of Technology, Kemivaegen 4, Gothenburg, SE41296 (Sweden)

2016-07-01

Nitride fuels have been regarded as one viable fuel option for Generation IV reactors due to their positive features compared to oxides. To be able to close the fuel cycle and follow the Generation IV concept, nitrides must, however, demonstrate their ability to be reprocessed. This means that the dissolution performance of actinide based nitrides has to be thoroughly investigated and assessed. As the zirconium stabilized nitrides show even better potential as fuel material than does the pure actinide containing nitrides, investigations on the dissolution behavior of both PuN and (Pu,Zr)N has been undertaken. If possible it is desirable to perform the fuel dissolutions using nitric acid. This, as most reprocessing strategies using solvent-solvent extraction are based on a nitride containing aqueous matrix. (Pu,Zr)N/C microspheres were produced using internal gelation. The spheres dissolution performance was investigated using nitric acid with and without additions of HF and Ag(II). In addition PuN fuel pellets were produced from powder and their dissolution performance were also assessed in a nitric acid based setting. It appears that both PuN and (Pu,Zr)N/C fuel material can be completely dissolved in nitric acid of high concentration with the use of catalytic amounts of HF. The amount of HF added strongly affects dissolution kinetics of (Pu, Zr)N and the presence of HF affects the 2 solutes differently, possibly due to inhomogeneity o the initial material. Large additions of Ag(II) can also be used to facilitate the dissolution of (Pu,Zr)N in nitric acid. PuN can be dissolved by pure nitric acid of high concentration at room temperature while (Pu, Zr)N is unaffected under similar conditions. At elevated temperature (reflux), (Pu,Zr)N can, however, also be dissolved by concentrated pure nitric acid.

Effect of finite ion-temperature on ion-acoustic solitary waves in an inhomogeneous plasma

International Nuclear Information System (INIS)

Shivamoggi, B.K.

1981-01-01

The propagation of weakly nonlinear ion-acoustic waves in an inhomogeneous plasma is studied taking into account the effect of finite ion temperature. It is found that, whereas both the amplitude and the velocity of propagation decrease as the ion-acoustic solitary wave propagates into regions of higher density, the effect of a finite ion temperature is to reduce the amplitude but enhance the velocity of propagation of the solitary wave. (author)

Hybrid processing of Ti-6Al-4V using plasma immersion ion implantation combined with plasma nitriding

Directory of Open Access Journals (Sweden)

Silva Maria Margareth da

2006-01-01

Full Text Available Based on the fact that the Ti-6Al-4V alloy has good mechanical properties, excellent resistance to corrosion and also excellent biocompatibility, however with low wear resistance, this work aims to test plasma processes or combination of plasma and ion implantation processes to improve these characteristics. Two types of processing were used: two steps PIII (Plasma Immersion Ion Implantation combined with PN (Plasma Nitriding and single step PIII treatment. According to Auger Electron Spectroscopy (AES results, the best solution was obtained by PIII for 150 minutes resulting in ~ 65 nm of nitrogen implanted layer, while the sample treated with PIII (75 minutes and PN (75 minutes reached ~ 35 nm implanted layer. The improvement of surface properties could also be confirmed by the nanoindentation technique, with values of hardness increasing for both processes. AFM (Atomic Force Microscopy characterization showed that the single step PIII process presented greater efficiency than the duplex process (PIII + PN, probably due to the sputtering occurring during the second step (PN removing partially the implanted layer of first step (PIII.

Ion composition and temperature in the topside ionosphere.

Science.gov (United States)

Brace, L. H.; Dunham, G. S.; Mayr, H. G.

1967-01-01

Particle and energy continuity equations derived and solved by computer method ion composition and plasma temperature measured by Explorer XXII PARTICLE and energy continuity equations derived and solved by computer method for ion composition and plasma temperature measured by Explorer XXII

Microstructure and antibacterial properties of microwave plasma nitrided layers on biomedical stainless steels

International Nuclear Information System (INIS)

Lin, Li-Hsiang; Chen, Shih-Chung; Wu, Ching-Zong; Hung, Jing-Ming; Ou, Keng-Liang

2011-01-01

Nitriding of AISI 303 austenitic stainless steel using microwave plasma system at various temperatures was conducted in the present study. The nitrided layers were characterized via scanning electron microscopy, glancing angle X-ray diffraction, transmission electron microscopy and Vickers microhardness tester. The antibacterial properties of this nitrided layer were evaluated. During nitriding treatment between 350 deg. C and 550 deg. C, the phase transformation sequence on the nitrided layers of the alloys was found to be γ → (γ + γ N ) → (γ + α + CrN). The analytical results revealed that the surface hardness of AISI 303 stainless steel could be enhanced with the formation of γ N phase in nitriding process. Antibacterial test also demonstrated the nitrided layer processed the excellent antibacterial properties. The enhanced surface hardness and antibacterial properties make the nitrided AISI 303 austenitic stainless steel to be one of the essential materials in the biomedical applications.

Additive-assisted synthesis of boride, carbide, and nitride micro/nanocrystals

International Nuclear Information System (INIS)

Chen, Bo; Yang, Lishan; Heng, Hua; Chen, Jingzhong; Zhang, Linfei; Xu, Liqiang; Qian, Yitai; Yang, Jian

2012-01-01

General and simple methods for the syntheses of borides, carbides and nitrides are highly desirable, since those materials have unique physical properties and promising applications. Here, a series of boride (TiB 2 , ZrB 2 , NbB 2 , CeB 6 , PrB 6 , SmB 6 , EuB 6 , LaB 6 ), carbide (SiC, TiC, NbC, WC) and nitride (TiN, BN, AlN, MgSiN 2 , VN) micro/nanocrystals were prepared from related oxides and amorphous boron/active carbon/NaN 3 with the assistance of metallic Na and elemental S. In-situ temperature monitoring showed that the reaction temperature could increase quickly to ∼850 °C, once the autoclave was heated to 100 °C. Such a rapid temperature increase was attributed to the intense exothermic reaction between Na and S, which assisted the formation of borides, carbides and nitrides. The as-obtained products were characterized by XRD, SEM, TEM, and HRTEM techniques. Results in this report will greatly benefit the future extension of this approach to other compounds. - Graphical abstract: An additive-assisted approach is successfully developed for the syntheses of borides, carbides and nitrides micro/nanocrystals with the assistance of the exothermic reaction between Na and S. Highlights: ► An additive-assisted synthesis strategy is developed for a number of borides, carbides and nitrides. ► The reaction mechanism is demonstrated by the case of SiC nanowires. ► The formation of SiC nanowires is initiated by the exothermic reaction of Na and S.

Ion temperature gradient mode driven solitons and shocks

Science.gov (United States)

Zakir, U.; Adnan, Muhammad; Haque, Q.; Qamar, Anisa; Mirza, Arshad M.

2016-04-01

Ion temperature gradient (ITG) driven solitons and shocks are studied in a plasma having gradients in the equilibrium number density and equilibrium ion temperature. In the linear regime, it is found that the ion temperature and the ratio of the gradient scale lengths, ηi=Ln/LT , affect both the real frequency and the growth rate of the ITG driven wave instability. In the nonlinear regime, for the first time we derive a Korteweg de Vries-type equation for the ITG mode, which admits solitary wave solution. It is found that the ITG mode supports only compressive solitons. Further, it is noticed that the soliton amplitude and width are sensitive to the parameter ηi=Ln/LT . Second, in the presence of dissipation in the system, we obtain a Burger type equation, which admits the shock wave solution. This work may be useful to understand the low frequency electrostatic modes in inhomogeneous electron-ion plasma having density and ion temperature gradients. For illustration, the model has been applied to tokamak plasma.

On the electron-ion temperature ratio established by collisionless shocks

Science.gov (United States)

Vink, Jacco; Broersen, Sjors; Bykov, Andrei; Gabici, Stefano

2015-07-01

Astrophysical shocks are often collisionless shocks, in which the changes in plasma flow and temperatures across the shock are established not through Coulomb interactions, but through electric and magnetic fields. An open question about collisionless shocks is whether electrons and ions each establish their own post-shock temperature (non-equilibration of temperatures), or whether they quickly equilibrate in the shock region. Here we provide a simple, thermodynamic, relation for the minimum electron-ion temperature ratios that should be expected as a function of Mach number. The basic assumption is that the enthalpy-flux of the electrons is conserved separately, but that all particle species should undergo the same density jump across the shock, in order for the plasma to remain charge neutral. The only form of additional electron heating that we allow for is adiabatic heating, caused by the compression of the electron gas. These assumptions result in an analytic treatment of expected electron-ion temperature ratio that agrees with observations of collisionless shocks: at low sonic Mach numbers, Ms ≲ 2, the electron-ion temperature ratio is close to unity, whereas for Mach numbers above Ms ≈ 60 the electron-ion temperature ratio asymptotically approaches a temperature ratio of Te/Ti = me/ ⟨ mi ⟩. In the intermediate Mach number range the electron-ion temperature ratio scales as Te/Ti ∝ Ms-2. In addition, we calculate the electron-ion temperature ratios under the assumption of adiabatic heating of the electrons only, which results in a higher electron-ion temperature ratio, but preserves the Te/Ti ∝ Ms-2 scaling. We also show that for magnetised shocks the electron-ion temperature ratio approaches the asymptotic value Te/Ti = me/ ⟨ mi ⟩ for lower magnetosonic Mach numbers (Mms), mainly because for a strongly magnetised shock the sonic Mach number is larger than the magnetosonic Mach number (Mms ≤ Ms). The predicted scaling of the electron-ion

Focused ion beam induced deflections of freestanding thin films

International Nuclear Information System (INIS)

Kim, Y.-R.; Chen, P.; Aziz, M. J.; Branton, D.; Vlassak, J. J.

2006-01-01

Prominent deflections are shown to occur in freestanding silicon nitride thin membranes when exposed to a 50 keV gallium focused ion beam for ion doses between 10 14 and 10 17 ions/cm 2 . Atomic force microscope topographs were used to quantify elevations on the irradiated side and corresponding depressions of comparable magnitude on the back side, thus indicating that what at first appeared to be protrusions are actually the result of membrane deflections. The shape in high-stress silicon nitride is remarkably flat-topped and differs from that in low-stress silicon nitride. Ion beam induced biaxial compressive stress generation, which is a known deformation mechanism for other amorphous materials at higher ion energies, is hypothesized to be the origin of the deflection. A continuum mechanical model based on this assumption convincingly reproduces the profiles for both low-stress and high-stress membranes and provides a family of unusual shapes that can be created by deflection of freestanding thin films under beam irradiation

Formation of nanocrystals embedded in a silicon nitride film at a low temperature ({<=}200 deg. C)

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyoung-Min; Kim, Tae-Hwan [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of); Hong, Wan-Shick [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of)], E-mail: wshong@uos.ac.kr

2008-12-15

Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH{sub 4}, NH{sub 3} and H{sub 2} was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H{sub 2}/SiH{sub 4} mixture ratio that was higher than four.

Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3

International Nuclear Information System (INIS)

Hinkle, Chris; Lucovsky, Gerry

2003-01-01

Remote plasma-assisted nitridation or RPN is demonstrated to be a processing pathway for nitridation of Zr and Hf silicate alloys, and for Al 2 O 3 , as well. The dependence of nitrogen incorporation on the process pressure is qualitatively similar to what has been reported for the plasma-assisted nitridation of SiO 2 , the lower the process pressure the greater the nitrogen incorporation in the film. The increased incorporation of nitrogen has been correlated with the penetration of the plasma-glow into the process chamber, and the accompanying increase in the concentration of N 2 + ions that participate in the reactions leading to bulk incorporation. The nitrogen incorporation as been studied by Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS)

Annealing effect on the microstructure modification and tribological properties of amorphous carbon nitride films

Science.gov (United States)

Wang, Zhou; Wang, Chengbing; Wang, Qi; Zhang, Junyan

2008-10-01

The influences of thermal annealing on the microstructural and tribological properties of amorphous carbon nitride films were investigated. X-ray photoelectron spectroscopy, Raman spectroscopy, and Fourier transform infrared spectrometer were utilized to characterize bond configuration and chemical state of the films. The results indicated that at low annealing temperatures (200 and 300 °C), the volatile species and surface contamination are easily dissociated without obvious bulk modification; while at high annealing temperatures (400 and 500 °C), the microstructure of carbon nitride films changed and favored a graphitization process, which indicated the growth of more graphitic film structures. The faint Raman signal of C≡N decreased with annealing temperature (TA) and completely disappeared at TA of 500 °C, indicating that nitrile bonds were thermal unstable under high temperature. Surprisingly, the tribological properties of the films showed a remarkably decreasing in friction coefficient as the TA increased; it is attributed to the graphitization of carbon nitride films during thermal annealing, which favored transfer film formation between the carbon nitride films and counterface materials. The transfer films benefit the decrease in coefficient of friction.

Kinetic parameters of nitridation of molybdenum and niobium alloys with various structure states

International Nuclear Information System (INIS)

Solodkin, G.A.; Bulgach, A.A.; Likhacheva, T.E.

1985-01-01

Effect of preliminary plastic strain under rolling on kinetic parameters of nitridation of VN-2AEh, VN-3 niobium alloys and molybdenum alloy with hafnium is investigated. Extreme character of dependence of kinetic parameters of nitridation on the degree of reduction under rolling is determined. Preliminary plastic strain at negligible reduction is shown to accelerate growth of the zone of internal nitridation and decelerates growth of the nitride zone. Nitrogen atom removal from the surface to the centre is retarded at the increase of the degree of reduction up to 50% and higher. The degree of deformations is the higher the lower nitridation temperature is

High aspect ratio titanium nitride trench structures as plasmonic biosensor

DEFF Research Database (Denmark)

Shkondin, Evgeniy; Repän, Taavi; Takayama, Osamu

2017-01-01

High aspect ratio titanium nitride (TiN) grating structures are fabricated by the combination of deep reactive ion etching (DRIE) and atomic layer deposition (ALD) techniques. TiN is deposited at 500 ◦C on a silicon trench template. Silicon between vertical TiN layers is selectively etched...... to fabricate the high aspect ratio TiN trenches with the pitch of 400 nm and height of around 2.7 µm. Dielectric functions of TiN films with different thicknesses of 18 - 105 nm and post-annealing temperatures of 700 - 900 ◦C are characterized by an ellipsometer. We found that the highest annealing temperature...... of 900 ◦C gives the most pronounced plasmonic behavior with the highest plasma frequency, ωp = 2.53 eV (λp = 490 nm). Such high aspect ratio trench structures function as a plasmonic grating sensor that supports the Rayleigh-Woods anomalies (RWAs), enabling the measurement of changes in the refractive...

Degradation of nitride coatings in low-pressure gas discharge plasma

Science.gov (United States)

Ivanov, Yurii; Shugurov, Vladimir; Krysina, Olga; Petrikova, Elizaveta; Tolkachev, Oleg

2017-12-01

The paper provides research data on the defect structure, mechanical characteristics, and tribological properties of commercially pure VT1-0 titanium exposed to surface modification on a COMPLEX laboratory electron-ion plasma setup which allows nitriding, coating deposition, and etching in low-pressure gas discharge plasma in a single vacuum cycle. It is shown that preliminary plasma nitriding forms a columnar Ti2N phase in VT1-0 titanium and that subsequent TiN deposition results in a thin nanocrystalline TiN layer. When the coating-substrate system is etched, the coating fails and the tribological properties of the material degrade greatly.

Toward Edge-Defined Holey Boron Nitride Nanosheets

Science.gov (United States)

Lin, Yi; Liao, Yunlong; Chen, Zhongfan; Connell, John W.

2015-01-01

"Holey" two-dimensional (2D) nanosheets with well-defined holy morphology and edge chemistry are highly desirable for applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. For example, holey grapheme is currently under extensive investigation for energy storage applications because of the improvement in ion transport due to through the thickness pathways provided by the holes. Without the holes, the 2D materials have significant limitations for such applications in which efficient ion transport is important. As part of an effort to apply this approach to other 2D nanomaterials, a method to etch geometrically defined pits or holes on the basal plane surface of hexagonal boron nitride (h-BN) nanosheets has been developed. The etching, conducted via heating in ambient air using metal nanoparticles as catalysts, was facile, controllable, and scalable. Starting h-BN layered crystals were etched and subsequently exfoliated into boron nitride nanosheets (BNNSs). The as-etched and exfoliated h-BN nanosheets possessed defined pit and hole shapes that were comprised of regulated nanostructures at the edges. The current finding are the first step toward the bulk preparation of holey BNNSs with defined holes and edges.

Cavitation contributes substantially to tensile creep in silicon nitride

International Nuclear Information System (INIS)

Luecke, W.E.; Wiederhorn, S.M.; Hockey, B.J.; Krause, R.F. Jr.; Long, G.G.

1995-01-01

During tensile creep of a hot isostatically pressed (HIPed) silicon nitride, the volume fraction of cavities increases linearly with strain; these cavities produce nearly all of the measured strain. In contrast, compressive creep in the same stress and temperature range produces very little cavitation. A stress exponent that increases with stress (var-epsilon ∝ σ n , 2 < n < 7) characterizes the tensile creep response, while the compressive creep response exhibits a stress dependence of unity. Furthermore, under the same stress and temperature, the material creeps nearly 100 times faster in tension than in compression. Transmission electron microscopy (TEM) indicates that the cavities formed during tensile creep occur in pockets of residual crystalline silicate phase located at silicon nitride multigrain junctions. Small-angle X-ray scattering (SAXS) from crept material quantifies the size distribution of cavities observed in TEM and demonstrates that cavity addition, rather than cavity growth, dominates the cavitation process. These observations are in accord with a model for creep based on the deformation of granular materials in which the microstructure must dilate for individual grains t slide past one another. During tensile creep the silicon nitride grains remain rigid; cavitation in the multigrain junctions allows the silicate to flow from cavities to surrounding silicate pockets, allowing the dilation of the microstructure and deformation of the material. Silicon nitride grain boundary sliding accommodates this expansion and leads to extension of the specimen. In compression, where cavitation is suppressed, deformation occurs by solution-reprecipitation of silicon nitride

Hall effects on peristalsis of boron nitride-ethylene glycol nanofluid with temperature dependent thermal conductivity

Science.gov (United States)

Abbasi, F. M.; Gul, Maimoona; Shehzad, S. A.

2018-05-01

Current study provides a comprehensive numerical investigation of the peristaltic transport of boron nitride-ethylene glycol nanofluid through a symmetric channel in presence of magnetic field. Significant effects of Brownian motion and thermophoresis have been included in the energy equation. Hall and Ohmic heating effects are also taken into consideration. Resulting system of non-linear equations is solved numerically using NDSolve in Mathematica. Expressions for velocity, temperature, concentration and streamlines are derived and plotted under the assumption of long wavelength and low Reynolds number. Influence of various parameters on heat and mass transfer rates have been discussed with the help of bar charts.

Ion beam modification of sputtered metal nitride thin films: A study of the induced microstructural changes

International Nuclear Information System (INIS)

Milosavljevic, M.; Perusko, D.; Popovic, M.; Novakovic, M.

2008-01-01

Single CrN and TiN and multilayered AlN/TiN and Al/Ti thin film structures (t = 240-280 nm) deposited on Si were irradiated with 120-200 keV Ar + ions to the fluences ranging from 1 x 10 11 5 to 4 x 10 16 ions/cm 2 . The metallic Al/Ti multilayered structure was also irradiated with high fluence (1- 2 x 10 17 /cm 2 ) nitrogen ions at 200 keV, in order to study interface mixing and formation of nitrides. Single component CrN and TiN thin films were found to grow in the form of a very fine polycrystalline columnar structures. Individual crystal grains were of the order of a few tens of nm in diameter, stretching from the substrate to the surface. After ion irradiation, the layers retain their polycrystalline structure, although the columns become disconnected, the resulting structures consisting of larger grains and nano-particles of the same phase. The implanted samples displayed higher electrical resistivity, presumably due to a higher concentration of point defects and the presence of nano-particles. In Al/Ti and AlN/TiN multilayers irradiated with Ar ions, the as-deposited structures exhibit well-defined, isolated polycrystalline Al and Ti, or AlN and TiN layers, with sharp interfaces. In the metallic system ion irradiation induced interface mixing which progressed with increasing the ion fluence. Mixing was most pronounced at the interfaces that are located around the projected ion range. The multilayered structure was essentially preserved, but the implanted samples exhibit much larger crystal grains. Also, the formation of lamellar columns stretching over a number of individual layers was observed. The AlN/TiN multilayered structures exhibited no measurable interface mixing on Ar irradiation, attributable to the nature of interatomic bonding and to mutual immiscibility of AlN and TiN. High fluence nitrogen ion irradiation of Al/Ti multilayers results in both the introduction of nitrogen into the structures as well as a high level of their intermixing. A

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

International Nuclear Information System (INIS)

Altun, Ali Ozhan; Jeong, Jun-Ho; Rha, Jong-Joo; Kim, Ki-Don; Lee, Eung-Sug

2007-01-01

Cubic boron nitride (c-BN) is one of the hardest known materials (second after diamond). It has a high level of chemical resistance and high UV transmittance. In this study, a stamp for ultra-violet nanoimprint lithography (UV-NIL) was fabricated using a bi-layered BN film deposited on a quartz substrate. Deposition of the BN was done using RF magnetron sputtering. A hexagonal boron nitride (h-BN) layer was deposited for 30 min before c-BN was deposited for 30 min. The thickness of the film was measured as 160 nm. The phase of the c-BN layer was investigated using Fourier transform infrared (FTIR) spectrometry, and it was found that the c-BN layer has a 40% cubic phase. The deposited film was patterned using focused ion beam (FIB) lithography for use as a UV-NIL stamp. Line patterns were fabricated with the line width and line distance set at 150 and 150 nm, respectively. The patterning process was performed by applying different currents to observe the effect of the current value on the pattern profile. The fabricated patterns were investigated using AFM, and it was found that the pattern fabricated by applying a current value of 50 picoamperes (pA) has a better profile with a 65 nm line depth. The UV transmittance of the 160 nm thick film was measured to be 70-86%. The hardness and modulus of the BN was measured to be 12 and 150 GPa, respectively. The water contact angle of the stamp surface was measured at 75 0 . The stamp was applied to UV-NIL without coating with an anti-adhesion layer. Successful imprinting was proved via scanning electron microscope (SEM) images of the imprinted resin

In situ EELS and TEM observation of Al implanted with nitrogen ions

International Nuclear Information System (INIS)

Hojou, K.; Furuno, S.; Kushita, K.N.; Otsu, H.; Izui, K.

1995-01-01

Formation processes of Aluminum nitride (AIN) in Aluminum (AI) implanted with nitrogen were examined by in situ EELS and TEM observations during nitrogen ion implantation in an electron microscope at room temperature and 400 deg C. AIN phase was identified both by EDP and EELS after nitrogen ion implantation to 6 x 10 20 (N + )/m 2 . The observed peak (20.8 eV) in EELS spectra was identified as plasmon loss peak of AIN formed in AI. The binding energy of N ls in AI was found to shift by about 4 eV to the lower side with increasing nitrogen-ion fluence. Unreacted AI was also found to remain in the AIN films after high fluence implantation both at room temperature and 400 deg C. (authors). 11 refs., 5 figs., 2 tabs

Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Schaekers, Marc [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Blasco, Nicolas [Air Liquide Electronics US, L.P., 46401 Landing Parkway, Fremont, California 94538 (United States)

2013-03-18

Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

Energy Technology Data Exchange (ETDEWEB)

Li Yang [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China); Wang Liang, E-mail: wlimt@yahoo.com [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China); Zhang Dandan; Shen Lie [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China)

2010-11-15

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 deg. C for 8 h in an NH{sub 3} gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 deg. C for 8 h can produced a compound layer of 2.5 {mu}m thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 deg. C within the same time.

Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature.

Science.gov (United States)

Ma, Chengkun; Chen, Hailong; Wang, Chao; Zhang, Jifeng; Qi, Hui; Zhou, Limin

2017-11-03

Based on the optimal proportion of resin and curing agent, an ultrahigh-temperature inorganic phosphate adhesive was prepared with aluminum dihydric phosphate, aluminium oxide ( α -Al₂O₃), etc. and cured at room temperature (RT). Then, nano-aluminum nitride (nano-AlN), nano-Cupric oxide (nano-CuO), and nano-titanium oxide (nano-TiO₂) were added into the adhesive. Differential scanning calorimetry was conducted using the inorganic phosphate adhesive to analyze the phosphate reactions during heat treatment, and it was found that 15 wt % nano-AlN could clearly decrease the curing temperature. Scanning electron microscopy was used to observe the microphenomenon of the modified adhesive at ultrahigh-temperature. The differential thermal analysis of the inorganic phosphate adhesive showed that the weight loss was approximately 6.5 wt % when the mass ratio of resin to curing agent was 1:1.5. An X-ray diffraction analysis of the adhesive with 10% nano-AlN showed that the phase structure changed from AlPO₄(11-0500) to the more stable AlPO₄(10-0423) structure after heat treatment. The shear strength of the adhesive containing 10% nano-AlN reached 7.3 MPa at RT due to the addition of nano-AlN, which promoted the formation of phosphate and increased the Al 3+ .

Development of new ferritic alloys reinforced by nano titanium nitrides

International Nuclear Information System (INIS)

Mathon, M.H.; Perrut, M.; Poirier, L.; Ratti, M.; Hervé, N.; Carlan, Y. de

2015-01-01

Nano-reinforced steels are considered for future nuclear reactors or for application at high temperature like the heat exchangers tubes or plates. Oxide Dispersion Strengthened (ODS) alloys are the most known of the nano-reinforced alloys. They exhibit high creep strength as well as high resistance to radiation damage. This article deals with the development of new nano reinforced alloys called Nitride Dispersed Strengthened (NDS). Those are also considered for nuclear applications and could exhibit higher ductility with a simplest fabrication way. Two main fabrication routes were studied: the co-milling of Fe–18Cr1W0.008N and TiH 2 powders and the plasma nitration at low temperature of a Fe–18Cr1W0.8Ti powder. The materials were studied mainly by Small Angle Neutron Scattering. The feasibility of the reinforcement by nano-nitride particles is demonstrated. The final size of the nitrides can be similar (few nanometers) to the nano-oxides observed in ODS alloys. The mechanical properties of the new NDS show an amazing ductility at high temperature for a nano-reinforced alloy

Development of new ferritic alloys reinforced by nano titanium nitrides

Energy Technology Data Exchange (ETDEWEB)

Mathon, M.H., E-mail: marie-helene.mathon@cea.fr [Laboratoire Léon Brillouin, CEA-CNRS, CEA/Saclay, 91191 Gif-sur-Yvette (France); Perrut, M., E-mail: mikael.perrut@onera.fr [Laboratoire Léon Brillouin, CEA-CNRS, CEA/Saclay, 91191 Gif-sur-Yvette (France); Poirier, L., E-mail: poirier@nitruvid.com [Bodycote France and Belgium, 9 r Jean Poulmarch, 95100 Argenteuil (France); Ratti, M., E-mail: mathieu.ratti@snecma.fr [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F91191 Gif-sur-Yvette (France); Hervé, N., E-mail: nicolas.herve@cea.fr [CEA, DRT, LITEN, F38054 Grenoble (France); Carlan, Y. de, E-mail: yann.decarlan@cea.fr [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F91191 Gif-sur-Yvette (France)

2015-01-15

Nano-reinforced steels are considered for future nuclear reactors or for application at high temperature like the heat exchangers tubes or plates. Oxide Dispersion Strengthened (ODS) alloys are the most known of the nano-reinforced alloys. They exhibit high creep strength as well as high resistance to radiation damage. This article deals with the development of new nano reinforced alloys called Nitride Dispersed Strengthened (NDS). Those are also considered for nuclear applications and could exhibit higher ductility with a simplest fabrication way. Two main fabrication routes were studied: the co-milling of Fe–18Cr1W0.008N and TiH{sub 2} powders and the plasma nitration at low temperature of a Fe–18Cr1W0.8Ti powder. The materials were studied mainly by Small Angle Neutron Scattering. The feasibility of the reinforcement by nano-nitride particles is demonstrated. The final size of the nitrides can be similar (few nanometers) to the nano-oxides observed in ODS alloys. The mechanical properties of the new NDS show an amazing ductility at high temperature for a nano-reinforced alloy.

Charge carrier transport properties in layer structured hexagonal boron nitride

Directory of Open Access Journals (Sweden)

T. C. Doan

2014-10-01

Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

Nitriding and Nitrocarburizing; Current Status and Future Challenges

DEFF Research Database (Denmark)

Somers, Marcel A. J.

, aspects of low temperature surface hardening of stainless steels in a gaseous environment will be addressed. Here, the developed case consists of expanded austenite and/or expanded martensite, which essentially is a super saturated solid solution of nitrogen/carbon in austenite/martensite. The current......This contribution addresses the current understanding of gaseous nitriding and nitrocarburizing. Aspects of thermodynamics, kinetics and microstructure development in iron and heat treatable steel will be explained. In these materials the nitrided/ nitrocarburized case can be subdivided...

High-temperature superconductors induced by ion implantation. Final report

International Nuclear Information System (INIS)

Greenwald, A.C.; Johnson, E.

1988-08-01

High dose oxygen ion implantation (10 to the 17th power ions per sq. cm.) at elevated temperatures (300 C) has been shown to adjust the critical temperature of gamma-Y-Ba-Cu-O and Bi-Ca-Sr-Cu-O materials. These results are in marked contrast to earlier work which showed complete destruction of superconducting properties for similar radiation doses, and marked reduction in superconducting properties at one-tenth this dose in the 1-2-3- compound only. Experiments also showed that the superconducting materials can be patterned into conducting and nonconducting areas without etching by ion implantation, allowing maintenance of planar geometries required for microcircuit fabrication. Experiments on deposition of thin films of high temperature superconductors for use with the ion implantation experiments showed that ion beam sputtering from a single target could achieve the correct stoichiometry. Variations of composition with ion beam energy and angle of sputtered ions were studied

Nitridation Of The A A 2024 T3 Aluminium By The Glow Discharge Plasma Technique

International Nuclear Information System (INIS)

Mudjiman, Supardjono; Sujitno, Tjipto; Sudjatmoko

1996-01-01

Nitridation of A A 2024 T3 aluminium by means of plasma glow discharge technique has been carried out. For this purpose, the experiments were carried out at the temperature 30 o C, 60 o C, 100 o C, 150 o C, 200 o C, and 250 o C whereas the nitridation time were varied at 5 minutes, 15 minutes, 40 minutes, 90 minutes and 180 minutes. The results showed that the optimum temperature and time of nitridation were 60 o C and 90 minutes respectively and the hardness increased from 115 to 166 KHN

Preparation and chemical stability of iron-nitride-coated iron microparticles

International Nuclear Information System (INIS)

Luo Xin; Liu Shixiong

2007-01-01

Iron-nitride-coated iron microparticles were prepared by nitridation of the surface of iron microparticles with ammonia gas at a temperature of 510 deg. C. The phases, composition, morphology, magnetic properties, and chemical stability of the particles were studied. The phases were α-Fe, ε-Fe 3 N, and γ-Fe 4 N. The composition varied from the core to the surface, with 99.8 wt% Fe in the core, and 93.8 wt% Fe and 6 wt% N in the iron-nitride coating. The thickness of the iron-nitride coating was about 0.28 μm. The chemical stability of the microparticles was greatly improved, especially the corrosion resistance in corrosive aqueous media. The saturation magnetization and the coercive force were 17.1x10 3 and 68 kA/m, respectively. It can be concluded that iron-nitride-coated iron microparticles will be very useful in many fields, such as water-based magnetorheological fluids and polishing fluids

Encapsulated Vanadium-Based Hybrids in Amorphous N-Doped Carbon Matrix as Anode Materials for Lithium-Ion Batteries.

Science.gov (United States)

Long, Bei; Balogun, Muhammad-Sadeeq; Luo, Lei; Luo, Yang; Qiu, Weitao; Song, Shuqin; Zhang, Lei; Tong, Yexiang

2017-11-01

Recently, researchers have made significant advancement in employing transition metal compound hybrids as anode material for lithium-ion batteries and developing simple preparation of these hybrids. To this end, this study reports a facile and scalable method for fabricating a vanadium oxide-nitride composite encapsulated in amorphous carbon matrix by simply mixing ammonium metavanadate and melamine as anode materials for lithium-ion batteries. By tuning the annealing temperature of the mixture, different hybrids of vanadium oxide-nitride compounds are synthesized. The electrode material prepared at 700 °C, i.e., VM-700, exhibits excellent cyclic stability retaining 92% of its reversible capacity after 200 cycles at a current density of 0.5 A g -1 and attractive rate performance (220 mAh g -1 ) under the current density of up to 2 A g -1 . The outstanding electrochemical properties can be attributed to the synergistic effect from heterojunction form by the vanadium compound hybrids, the improved ability of the excellent conductive carbon for electron transfer, and restraining the expansion and aggregation of vanadium oxide-nitride in cycling. These interesting findings will provide a reference for the preparation of transition metal oxide and nitride composites as well. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Distributions of the ion temperature, ion pressure, and electron density over the current sheet surface

International Nuclear Information System (INIS)

Kyrie, N. P.; Markov, V. S.; Frank, A. G.; Vasilkov, D. G.; Voronova, E. V.

2016-01-01

The distributions of the ion temperature, ion pressure, and electron density over the width (the major transverse dimension) of the current sheet have been studied for the first time. The current sheets were formed in discharges in argon and helium in 2D and 3D magnetic configurations. It is found that the temperature of argon ions in both 2D and 3D magnetic configurations is almost uniform over the sheet width and that argon ions are accelerated by the Ampère force. In contrast, the distributions of the electron density and the temperature of helium ions are found to be substantially nonuniform. As a result, in the 2D magnetic configuration, the ion pressure gradient across the sheet width makes a significant contribution (comparable with the Ampère force) to the acceleration of helium ions, whereas in the 3D magnetic configuration, the Ampère force is counterbalanced by the pressure gradient.

Distributions of the ion temperature, ion pressure, and electron density over the current sheet surface

Energy Technology Data Exchange (ETDEWEB)

Kyrie, N. P., E-mail: kyrie@fpl.gpi.ru; Markov, V. S., E-mail: natalya.kyrie@yandex.ru; Frank, A. G.; Vasilkov, D. G.; Voronova, E. V. [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation)

2016-06-15

The distributions of the ion temperature, ion pressure, and electron density over the width (the major transverse dimension) of the current sheet have been studied for the first time. The current sheets were formed in discharges in argon and helium in 2D and 3D magnetic configurations. It is found that the temperature of argon ions in both 2D and 3D magnetic configurations is almost uniform over the sheet width and that argon ions are accelerated by the Ampère force. In contrast, the distributions of the electron density and the temperature of helium ions are found to be substantially nonuniform. As a result, in the 2D magnetic configuration, the ion pressure gradient across the sheet width makes a significant contribution (comparable with the Ampère force) to the acceleration of helium ions, whereas in the 3D magnetic configuration, the Ampère force is counterbalanced by the pressure gradient.

Comparing the effect of pressure and temperature on ion mobilities

International Nuclear Information System (INIS)

Tabrizchi, Mahmoud; Rouholahnejad, Fereshteh

2005-01-01

The effect of pressure on ion mobilities has been investigated and compared with that of temperature. In this connection, an ion mobility spectrometry (IMS) cell, which employs a corona discharge as the ionization source, has been designed and constructed to allow varying pressure inside the drift region. IMS spectra were recorded at various pressures ranging from 15 Torr up to atmospheric pressure. The results show that IMS peaks shift perfectly linear with pressure which is in excellent agreement with the ion mobility theory. However, experimental ion mobilities versus temperature show deviation from the theoretical trend. The deviation is attributed to formation of clusters. The different behaviour of pressure and temperature was explained on the basis of the different impact of pressure and temperature on hydration and clustering of ions. Pressure affects the clustering reactions linearly but temperature affects it exponentially

Plasma nitriding of steels

CERN Document Server

Aghajani, Hossein

2017-01-01

This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

Annealing and deposition effects of the chemical composition of silicon rich nitride

DEFF Research Database (Denmark)

Andersen, Karin Nordström; Svendsen, Winnie Edith; Stimpel-Lindner, T.

2005-01-01

Silicon-rich nitride, deposited by LPCVD, is a low stress amorphous material with a high refractive index. After deposition the silicon-rich nitride thin film is annealed at temperatures above 1100 oC to break N-H bonds, which have absorption peaks in the wavelength band important for optical...... in optical waveguides. This means that the annealing temperature must be high enough to break the N-H bonds, but no so high as to produce clusters. Therefore, the process window for an annealing step lies between 1100 and 1150 oC. The chemical composition of amorphous silicon-rich nitride has been...... investigated by Rutherford back scattering (RBS) and X-ray photoelectron spectroscopy (XPS). The influence of deposition parameters and annealing temperatures on the stoichiometry and the chemical bonds will be discussed. The origin of the clusters has been found to be silicon due to severe silicon out...

Nitride passivation of the interface between high-k dielectrics and SiGe

Energy Technology Data Exchange (ETDEWEB)

Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

2016-01-04

In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

Thermal expansion of TRU nitride solid solutions as fuel materials for transmutation of minor actinides

International Nuclear Information System (INIS)

Takano, Masahide; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

2009-01-01

The lattice thermal expansion of the transuranium nitride solid solutions was measured to investigate the composition dependence. The single-phase solid solution samples of (Np 0.55 Am 0.45 )N, (Pu 0.59 Am 0.41 )N, (Np 0.21 Pu 0.52 Am 0.22 Cm 0.05 )N and (Pu 0.21 Am 0.18 Zr 0.61 )N were prepared by carbothermic nitridation of the respective transuranium dioxides and nitridation of Zr metal through hydride. The lattice parameters were measured by the high temperature X-ray diffraction method from room temperature up to 1478 K. The linear thermal expansion of each sample was determined as a function of temperature. The average thermal expansion coefficients over the temperature range of 293-1273 K for the solid solution samples were 10.1, 11.5, 10.8 and 8.8 x 10 -6 K -1 , respectively. Comparison of these values with those for the constituent nitrides showed that the average thermal expansion coefficients of the solid solution samples could be approximated by the linear mixture rule within the error of 2-3%.

Sulfur-Doped Carbon Nitride Polymers for Photocatalytic Degradation of Organic Pollutant and Reduction of Cr(VI).

Science.gov (United States)

Zheng, Yun; Yu, Zihao; Lin, Feng; Guo, Fangsong; Alamry, Khalid A; Taib, Layla A; Asiri, Abdullah M; Wang, Xinchen

2017-04-01

As a promising conjugated polymer, binary carbon nitride has attracted extensive attention as a metal-free and visible-light-responsive photocatalyst in the area of photon-involving purification of water and air. Herein, we report sulfur-doped polymeric carbon nitride microrods that are synthesized through thermal polymerization based on trithiocyanuric acid and melamine (TM) supramolecular aggregates. By tuning the polymerization temperature, a series of sulfur-doped carbon nitride microrods are prepared. The degradation of Rhodamine B (RhB) and the reduction of hexavalent chromium Cr(VI) are selected as probe reactions to evaluate the photocatalytic activities. Results show that increasing pyrolysis temperature leads to a large specific surface area, strong visible-light absorption, and accelerated electron-hole separation. Compared to bulk carbon nitride, the highly porous sulfur-doped carbon nitride microrods fabricated at 650 °C exhibit remarkably higher photocatalytic activity for degradation of RhB and reduction of Cr(VI). This work highlights the importance of self-assembly approach and temperature-control strategy in the synthesis of photoactive materials for environmental remediation.

Measurement of the ion temperature in a diffuse theta pinch

International Nuclear Information System (INIS)

Kudo, Koichi; Watanabe, Yukio; Ogi, Sukeomi; Sumikawa, Toshio; Akazaki, Masanori

1979-01-01

The Doppler broadening of helium ion spectra was observed, and the ion temperature of theta pinch plasma was obtained. The apparatus for the measurement consists of a spectroscope, a photomultiplier and an oscilloscope. The time variation of initial plasma density was obtained. The doppler broadening of the spectra was observed in case of the plasma density of 2 x 10 13 /cm 3 and 3 x 10 12 /cm 3 . The analyses of the spectra gave the ion temperature. The double temperature distribution was seen. The temperature of the low temperature part was 5 to 9 electron-volt, and that of the high temperature part several hundred electron-volt. The high temperature is caused by the thermalization of particles accelerated by the magnetic piston. The decay of high temperature ions is due to the charge exchange with the neutral particles. The time of the highest temperature corresponds to the time at which the luminescent layer reaches to the central axis. (Kato, T.)

Performance analysis of a mixed nitride fuel system for an advanced liquid metal reactor

International Nuclear Information System (INIS)

Lyon, W.F.; Baker, R.B.; Leggett, R.D.

1991-01-01

In this paper, the conceptual development and analysis of a proposed mixed nitride driver and blanket fuel system for a prototypic advanced liquid metal reactor design is performed. As a first step, an intensive literature survey is completed on the development and testing of nitride fuel systems. Based on the results of this survey, prototypic mixed nitride fuel and blanket pins is designed and analyzed using the SIEX computer code. The analysis predicts that the nitride fuel consistently operated at peak temperatures and cladding strain levels that compared quite favorably with competing fuel designs. These results, along with data available in the literature on nitride fuel performance, indicate that a nitride fuel system should offer enhanced capabilities for advanced liquid metal reactors

Performance analysis of a mixed nitride fuel system for an advanced liquid metal reactor

International Nuclear Information System (INIS)

Lyon, W.F.; Baker, R.B.; Leggett, R.D.

1990-11-01

The conceptual development and analysis of a proposed mixed nitride driver and blanket fuel system for a prototypic advanced liquid metal reactor design has been performed. As a first step, an intensive literature survey was completed on the development and testing of nitride fuel systems. Based on the results of this survey, prototypic mixed nitride fuel and blanket pins were designed and analyzed using the SIEX computer code. The analysis predicted that the nitride fuel consistently operated at peak temperatures and cladding strain levels that compared quite favorably with competing fuel designs. These results, along with data available in the literature on nitride fuel performance, indicate that a nitride fuel system should offer enhanced capabilities for advanced liquid metal reactors. 13 refs., 10 figs., 2 tabs

Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

Energy Technology Data Exchange (ETDEWEB)

Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

2014-04-24

Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

Semipolar III-nitride laser diodes with zinc oxide cladding.

Science.gov (United States)

Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

2017-07-24

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

High temperature resistant cermet and ceramic compositions

Science.gov (United States)

Phillips, W. M. (Inventor)

1978-01-01

Cermet compositions having high temperature oxidation resistance, high hardness and high abrasion and wear resistance, and particularly adapted for production of high temperature resistant cermet insulator bodies are presented. The compositions are comprised of a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Also disclosed are novel ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride.

Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

2008-10-01

Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Olaya, J.J.; Huerta, L.; Rodil, S.E.; Escamilla, R.

2008-01-01

Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T C ). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T C values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T C was correlated to a higher contribution of the N 2p states

Precipitation of Chromium Nitrides in the Super Duplex Stainless Steel 2507

Science.gov (United States)

Pettersson, Niklas; Pettersson, Rachel F. A.; Wessman, Sten

2015-03-01

Precipitation of chromium nitrides during cooling from temperatures in the range 1373 K to 1523 K (1100 °C to 1250 °C) has been studied for the super duplex stainless steel 2507 (UNS S32750). Characterization with optical, scanning and transmission electron microscopy was combined to quantify the precipitation process. Primarily Cr2N nitrides were found to precipitate with a high density in the interior of ferrite grains. An increased cooling rate and/or an increased austenite spacing clearly promoted nitride formation, resulting in precipitation within a higher fraction of the ferrite grains, and lager nitride particles. Furthermore, formation of the meta-stable CrN was induced by higher cooling rates. The toughness seemed unaffected by nitrides. A slight decrease in pitting resistance was, however, noticed for quenched samples with large amounts of precipitates. The limited adverse effect on pitting resistance is attributed to the small size (~200 nm) of most nitrides. Slower cooling of duplex stainless steels to allow nitrogen partitioning is suggested in order to avoid large nitrides, and thereby produce a size distribution with a smaller detrimental effect on pitting resistance.

Plasma nitriding of CA-6NM steel: effect of H2 + N2 gas mixtures in nitride layer formation for low N2 contents at 500 ºC

Directory of Open Access Journals (Sweden)

Angela Nardelli Allenstein

2010-12-01

Full Text Available This work aims to characterize the phases, thickness, hardness and hardness profiles of the nitride layers formed on the CA-6NM martensitic stainless steel which was plasma nitrided in gas mixtures containing different nitrogen amounts. Nitriding was performed at 500 ºC temperature, and 532 Pa (4 Torr pressure, for gas mixtures of 5% N2 + 95% H2, 10% N2 + 90% H2, and 20% N2 + 80% H2, and 2 hours nitriding time. A 6 hours nitriding time condition for gas mixture of 5% N2 + 95% H2 was also studied. Nitrided samples results were compared with non-nitrided condition. Thickness and microstructure of the nitrided layers were characterized by optical microscopy (OM, using Villela and Nital etchants, and the phases were identified by X-ray diffraction. Hardness profiles and hardness measured on surface steel were determined using Vickers hardness and nanoindentation tester, respectively. It was verified that nitrided layer produced in CA-6NM martensitc stainless steel is constituted of compound layer, being that formation of the diffusion zone was not observed for the studied conditions. The higher the nitrogen amounts in gas mixture the higher is the thickness of the nitrided layer and the probability to form different nitride phases, in the case γ'-Fe4N, ε-Fe2-3N and CrN phases. Intrinsic hardness of the nitrided layers produced in the CA-6NM stainless steel is about 12-14 GPa (~1200-1400 HV.

In-situ high temperature irradiation setup for temperature dependent structural studies of materials under swift heavy ion irradiation

International Nuclear Information System (INIS)

Kulriya, P.K.; Kumari, Renu; Kumar, Rajesh; Grover, V.; Shukla, R.; Tyagi, A.K.; Avasthi, D.K.

2015-01-01

An in-situ high temperature (1000 K) setup is designed and installed in the materials science beam line of superconducting linear accelerator at the Inter-University Accelerator Centre (IUAC) for temperature dependent ion irradiation studies on the materials exposed with swift heavy ion (SHI) irradiation. The Gd 2 Ti 2 O 7 pyrochlore is irradiated using 120 MeV Au ion at 1000 K using the high temperature irradiation facility and characterized by ex-situ X-ray diffraction (XRD). Another set of Gd 2 Ti 2 O 7 samples are irradiated with the same ion beam parameter at 300 K and simultaneously characterized using in-situ XRD available in same beam line. The XRD studies along with the Raman spectroscopic investigations reveal that the structural modification induced by the ion irradiation is strongly dependent on the temperature of the sample. The Gd 2 Ti 2 O 7 is readily amorphized at an ion fluence 6 × 10 12 ions/cm 2 on irradiation at 300 K, whereas it is transformed to a radiation-resistant anion-deficient fluorite structure on high temperature irradiation, that amorphized at ion fluence higher than 1 × 10 13 ions/cm 2 . The temperature dependent ion irradiation studies showed that the ion fluence required to cause amorphization at 1000 K irradiation is significantly higher than that required at room temperature irradiation. In addition to testing the efficiency of the in-situ high temperature irradiation facility, the present study establishes that the radiation stability of the pyrochlore is enhanced at higher temperatures

Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Feng, Shan [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tan, Jin, E-mail: jintan_cug@163.com [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Li, Bin; Song, Hao; Wu, Zhengbo; Chen, Xin [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

2015-02-05

Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated.

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

Science.gov (United States)

Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.

2015-12-01

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

International Nuclear Information System (INIS)

Hamann, S.; Röpcke, J.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.

2015-01-01

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH 4 , C 2 H 2 , HCN, and NH 3 ). With the help of OES, the rotational temperature of the screen plasma could be determined

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

Energy Technology Data Exchange (ETDEWEB)

Hamann, S., E-mail: hamann@inp-greifswald.de; Röpcke, J. [INP-Greifswald, Felix-Hausdorff-Str. 2, 17489 Greifswald (Germany); Börner, K.; Burlacov, I.; Spies, H.-J. [TU Bergakademie Freiberg, Institute of Materials Engineering, Gustav-Zeuner-Str. 5, 09599 Freiberg (Germany); Strämke, M.; Strämke, S. [ELTRO GmbH, Arnold-Sommerfeld-Ring 3, 52499 Baesweiler (Germany)

2015-12-15

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH{sub 4}, C{sub 2}H{sub 2}, HCN, and NH{sub 3}). With the help of OES, the rotational temperature of the screen plasma could be determined.

Iron nitride films formed in a r. f. glow discharge

Energy Technology Data Exchange (ETDEWEB)

Li, J.L.; O' Keefe, T.J.; James, W.J. (Depts. of Chemistry and Metallurgical Engineering and Graduate Center for Materials Research, Univ. of Missouri-Rolla (United States))

1992-12-30

Fe[sub 2]N and Fe[sub 3]N films were deposited on an r.f. glow discharge by introducing Fe(CO)[sub 5] and NH[sub 3] into the reactor. The iron nitride films thus formed exhibited sheet conductivities in the range of 10[sup 2]-10[sup 3] ohm[sup -1] cm[sup -1]. They exhibited microhardness ranging from 578 to 659 kg mm[sup -2] on glass slides. The effects of the deposition temperature and the nature of the substrate material on the structure and composition of the films were investigated. An Fe[sub 4]N layer was formed on iron substrates at 400degC in the plasma nitriding process using NH[sub 3] as the gas source. The Fe[sub 4]N layer exhibited a microhardness of 230 kg mm[sup -2]. The effect of the temperature on the formation of the nitrided layer is discussed. (orig.).

Lattice dynamics and electron/phonon interactions in epitaxial transition-metal nitrides

Science.gov (United States)

Mei, Antonio Rodolph Bighetti

Transition metal (TM) nitrides, due to their unique combination of remarkable physical properties and simple NaCl structure, are presently utilized in a broad range of applications and as model systems in the investigation of complex phenomena. Group-IVB nitrides TiN, ZrN, and HfN have transport properties which include superconductivity and high electrical conductivity; consequentially, they have become technologically important as electrodes and contacts in the semiconducting and superconducting industries. The Group-VB nitride VN, which exhibits enhanced ductility, is a fundamental component in superhard and tough nanostructured hard coatings. In this thesis, I investigate the lattice dynamics responsible for controlling superconductivity and electrical conductivities in Group-IVB nitrides and elasticity and structural stability of the NaCl-structure Group-VB nitride VN. Our group has already synthesized high-quality epitaxial TiN, HfN, and CeN layers on MgO(001) substrates. By irradiating the growth surface with high ion fluxes at energies below the bulk lattice-atom displacement threshold, dense epitaxial single crystal TM nitride films with extremely smooth surfaces have been grown using ultra-high vacuum magnetically-unbalanced magnetron sputter deposition. Using this approach, I completed the Group-IVB nitride series by growing epitaxial ZrN/MgO(001) films and then grew Group-VB nitride VN films epitaxially on MgO(001), MgO(011), and MgO(111). The combination of high-resolution x-ray diffraction (XRD) reciprocal lattice maps (RLMs), high-resolution cross-sectional transmission electron microscopy (HR-XTEM), and selected-area electron diffraction (SAED) show that single-crystal stoichiometric ZrN films grown at 450 °C are epitaxially oriented cube-on-cube with respect to their MgO(001) substrates, (001) ZrN||(001)MgO and [100]ZrN||[100]MgO. The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm. X-ray reflectivity results reveal that

Characterization of the laser gas nitrided surface of NiTi shape memory alloy

International Nuclear Information System (INIS)

Cui, Z.D.; Man, H.C.; Yang, X.J.

2003-01-01

Owing to its unique properties such as shape memory effects, superelasticity and radiopacity, NiTi alloy is a valuable biomaterial for fabricating implants. The major concern of this alloy for biological applications is the high atomic percentage of nickel in the alloy and the deleterious effects to the body by the corrosion and/or wears products. In this study, a continuous wave Nd-YAG laser was used to conduct laser gas nitriding on the substrate of NiTi alloy. The results show that a continuous and crack-free thin TiN layer was produced in situ on the NiTi substrate. The characteristics of the nitrided surface layer were investigated using SEM, XRD, XPS and AAS. No nickel signal was detected on the top surface of the laser gas nitrided layer. As compared with the mechanical polished NiTi alloy, the nickel ion release rate out of the nitrided NiTi alloy decreased significantly in Hanks' solution at 37 deg. C, especially the initial release rate

The Effect of Nitriding Treatment Variables on the Fatigue Limit of Alloy Steel (34crnimo6) Under High Cycle Fatigue

International Nuclear Information System (INIS)

Mohamed, J.; Al-Alkawi, H.; Salameh, M.

2009-01-01

The aim of this research is to improve the fatigue limit for alloy steel (34CrNiMo6) by salt bath nitriding process. This property is more effective to increase the fatigue life for parts which are used in continuous cyclic loading. All the fatigue tests were implemented before and after nitriding process under rotating bending. Constant and variable capacity stresses were applied before and after nitriding processes. The nitriding process were implemented in salt bath component at three different times (1, 2, 3) hr when temperature was constant at (555 degree centigrade). The depth of the nitride layer reached (0.24, 0.37, 0.5) mm. The nitriding process repeated of another specimens at the same times but the temperature was (600 degree centigrade), the layer depth reached (0.28, 0.41, 0.55) mm. The formation of a high nitrogen iron phases were detected with a layer of the hard chrome nitrides on the surface. The nitriding process is forming the barriers on the surface that resist the initiation and propagation of cracks, as well as generating the compressive residual stresses which delay the progress of fatigue crack. This research deduced that the nitriding processes increased the fatigue limit and this limit is proportional to the time of the nitriding process. When the time increased, the depth of nitride layer is increased, but decreased when the temperature increased to (600 degree centigrade) because of the formation of brittle phase,in spite of the increase in layer depth. (author)

Investigation of Steel Surfaces Treated by a Hybrid Ion Implantation Technique

International Nuclear Information System (INIS)

Reuther, H.; Richter, E.; Prokert, F.; Ueda, M.; Beloto, A. F.; Gomes, G. F.

2004-01-01

Implantation of nitrogen ions into stainless steel in combination with oxidation often results in a decrease or even complete removal of the chromium in the nitrogen containing outermost surface layer. While iron nitrides can be formed easily by this method, due to the absence of chromium, the formation of chromium nitrides is impossible and the beneficial influence of chromium in the steel for corrosion resistance cannot be used. To overcome this problem we use the following hybrid technique. A thin chromium layer is deposited on steel and subsequently implanted with nitrogen ions. Chromium can be implanted by recoil into the steel surface and thus the formation of iron/chromium nitrides should be possible. Both beam line ion implantation and plasma immersion ion implantation are used. Due to the variation of the process parameters, different implantation profiles and different compounds are produced. The produced layers are characterized by Auger electron spectroscopy, conversion electron Moessbauer spectroscopy and X-ray diffraction. The obtained results show that due to the variation of the implantation parameters, the formation of iron/chromium nitrides can be achieved and that plasma immersion ion implantation is the most suitable technique for the enrichment of chromium in the outermost surface layer of the steel when compared to the beam line implantation.

Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

International Nuclear Information System (INIS)

Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

2008-01-01

The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

The influence of surface layer nitriding on phase composition and tribological properties of cast steel

International Nuclear Information System (INIS)

Brzozka, K; Gorka, B; Gawronski, M; Budzynowski, T W

2010-01-01

The effect of two-stage low-temperature nitriding on atomic structure and mechanical properties of selected cast steels is investigated. Conversion electron Moessbauer spectroscopy has been used to investigate nitrides formation. In order to study tribological characteristics, tests of friction and reflecting electron microscopy measurements have been performed. It has been found that thin nitrides layer (composed mainly of γ'-Fe 4 N) arises in the course of the nitriding procedure in most of investigated cast steels, what considerably affects their microstructure and tribological properties.

Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature

Directory of Open Access Journals (Sweden)

Chengkun Ma

2017-11-01

Full Text Available Based on the optimal proportion of resin and curing agent, an ultrahigh-temperature inorganic phosphate adhesive was prepared with aluminum dihydric phosphate, aluminium oxide ( α -Al2O3, etc. and cured at room temperature (RT. Then, nano-aluminum nitride (nano-AlN, nano-Cupric oxide (nano-CuO, and nano-titanium oxide (nano-TiO2 were added into the adhesive. Differential scanning calorimetry was conducted using the inorganic phosphate adhesive to analyze the phosphate reactions during heat treatment, and it was found that 15 wt % nano-AlN could clearly decrease the curing temperature. Scanning electron microscopy was used to observe the microphenomenon of the modified adhesive at ultrahigh-temperature. The differential thermal analysis of the inorganic phosphate adhesive showed that the weight loss was approximately 6.5 wt % when the mass ratio of resin to curing agent was 1:1.5. An X-ray diffraction analysis of the adhesive with 10% nano-AlN showed that the phase structure changed from AlPO4(11-0500 to the more stable AlPO4(10-0423 structure after heat treatment. The shear strength of the adhesive containing 10% nano-AlN reached 7.3 MPa at RT due to the addition of nano-AlN, which promoted the formation of phosphate and increased the Al3+.

Simulated radiation effects in the superinsulating phase of titanium nitride films

Directory of Open Access Journals (Sweden)

Vujisić Miloš Lj.

2011-01-01

Full Text Available This paper investigates possible effects of alpha particle and ion beam irradiation on the properties of the superinsulating phase, recently observed in titanium nitride films, by using numerical simulation of particle transport. Unique physical properties of the superinsulating state are considered by relying on a two-dimensional Josephson junction array as a model of material structure. It is suggested that radiation-induced change of the Josephson junction charging energy would not affect the current-voltage characteristics of the superinsulating film significantly. However, it is theorized that a relapse to an insulating state with thermally activated resistance is possible, due to radiation-induced disruption of the fine-tuned granular structure. The breaking of Cooper pairs caused by incident and displaced ions may also destroy the conditions for a superinsulating phase to exist. Finally, even the energy loss to phonons can influence the superinsulating state, by increasing the effective temperature of the phonon thermostat, thereby reestablishing means for an energy exchange that can support Cooper pair tunneling.

Effect of component's geometry on the plasma nitriding behavior of AISI 4340 steel

International Nuclear Information System (INIS)

Asadi, Z. Soltani; Mahboubi, F.

2012-01-01

Highlights: → The thickness of the compound layer increases with increasing in temperature and groove width. → Surface layer at the remote regions from the edge is thinner than that of closer regions. → The hardness and the case depth of the nitrided layer increase with increasing the width of the groove. → Intensity of ε phase increases with increasing the width of the groove in both methods. → The ASPN specimens are covered by hexagonal particles and for the CPN by cauliflower shape nitrides. -- Abstract: The main aim of this work was to investigate the effect of the sample geometry on properties of the conventional plasma nitrided (CPN) and active screen plasma nitrided (ASPN) steel. Sample assemblies consisting of rectangular grooved steel blocks with different groove dimensions of 2, 4, 6, 8 and 10 (W) x 40 (H) x 20 (L) mm 3 and AISI 4340 steel plates (substrates) with dimensions of 10 x 40 x 60 mm 3 , to serve as groove cover, were prepared. The sample assemblies were conventional and active screen plasma nitrided under the gas mixture of 75%N 2 + 25%H 2 , at temperatures of 500 o C and 540 o C, pressure of 4 torr, for 5 h. Properties of the nitrided substrates were investigated by evaluating compound layer thickness, case depth, phase composition and hardness profile. Results of the experiments showed that the thickness of the compound layer, hardness and nitrided case depth increased with increasing the width of the groove for both methods. Also, in each sample, nitrogen atoms penetrated more deeply in the regions of the groove closer to the edge. Hallow cathode effect occurred at the sample with 2 mm width groove, in the CPN method, leading to the overheating of the sample. In ASPN, the hardness and the nitrided case depth are lower in comparison with CPN. The surface morphology of the CPN treated samples consists of cauliflower shape surface nitrides while the surface of the AS plasma nitrided samples are covered by the hexagonal particles with

Half-metallicity and electronic structures for carbon-doped group III-nitrides: Calculated with a modified Becke-Johnson potential

Science.gov (United States)

Fan, Shuai-wei; Wang, Ri-gao; Xu, Pemg

2016-09-01

The electronic structures and magnetism for carbon-doped group III-nitrides are investigated by utilizing the first principle method with the modified Becke-Johnson potential. Calculations show that carbon substituting cations (anions) would induce the group III-nitrides to be paramagnetic metals (half-metallic ferromagnets). Single carbon substituting nitrogen could produce 1.00μB magnetic moment. Electronic structures indicate that the carriers-mediated double-exchange interaction plays a crucial role in forming the ferromagnetism. Based on the mean-field theory, the Curie temperature for carbon-doped group III-nitrides would be above the room temperature. Negative chemical pair interactions imply that carbon dopants tend to form clustering distribution in group III-nitrides. The nitrogen vacancy would make the carbon-doped group III-nitrides lose the half-metallic ferromagnetism.

Electrochemical surface nitriding of pure iron by molten salt electrochemical process

Energy Technology Data Exchange (ETDEWEB)

Tsujimura, Hiroyuki; Goto, Takuya; Ito, Yasuhiko

2004-08-11

Electrochemical surface nitriding of pure iron was investigated in molten LiCl-KCl-Li{sub 3}N systems at 773 K. An outer compound layer and an inner diffusion layer were obtained by means of potentiostatic electrolysis at 1.00 V (versus Li{sup +}/Li). From XRD and SEM analyses, it was confirmed that the obtained compound layer consisted of {epsilon}-Fe{sub 2-3}N and {gamma}'-Fe{sub 4}N; the free energies of formation of the two nitrides are positive and the equilibrium nitrogen partial pressure of those are of the order of 10{sup 4} atm at 773 K. This result suggests that an apparent nitrogen partial pressure of at least the order of 10{sup 4} atm was imposed by the adsorbed nitrogen atoms (N{sub ads}) formed by anodic oxidation of nitride ion (N{sup 3-}) at the iron electrode surface.

Synthesis of graphitic carbon nitride by reaction of melamine and uric acid

International Nuclear Information System (INIS)

Dante, Roberto C.; Martin-Ramos, Pablo; Correa-Guimaraes, Adriana; Martin-Gil, Jesus

2011-01-01

Highlights: → Graphitic carbon nitrides by CVD of melamine and uric acid on alumina. → The building blocks of carbon nitrides are heptazine nuclei. → Composite particles with alumina core and carbon nitride coating. - Abstract: Graphitic carbon nitrides were synthesized starting from melamine and uric acid. Uric acid was chosen because it thermally decomposes, and reacts with melamine by condensation at temperatures in the range of 400-600 deg. C. The reagents were mixed with alumina and subsequently the samples were treated in an oven under nitrogen flux. Alumina favored the deposition of the graphitic carbon nitrides layers on the exposed surface. This method can be assimilated to an in situ chemical vapor deposition (CVD). Infrared (IR) spectra, as well as X-ray diffraction (XRD) patterns, are in accordance with the formation of a graphitic carbon nitride with a structure based on heptazine blocks. These carbon nitrides exhibit poor crystallinity and a nanometric texture, as shown by transmission electron microscopy (TEM) analysis. The thermal degradation of the graphitic carbon nitride occurs through cyano group formation, and involves the bridging tertiary nitrogen and the bonded carbon, which belongs to the heptazine ring, causing the ring opening and the consequent network destruction as inferred by connecting the IR and X-ray photoelectron spectroscopy (XPS) results. This seems to be an easy and promising route to synthesize graphitic carbon nitrides. Our final material is a composite made of an alumina core covered by carbon nitride layers.

Effects of heavy ion temperature on low-frequency kinetic Alfven waves

International Nuclear Information System (INIS)

Yang, L.; Wu, D. J.

2011-01-01

Heavy ion-electron (or proton) temperature ratio varies in a wide range in the solar and space environment. In this paper, proton and heavy ion temperatures are included in a three-fluid plasma model. For the specified parameters, low-frequency (<< heavy ion gyrofrequency) kinetic Alfven waves (KAWs) with sub- and super-Alfvenic speeds are found to coexist in the same plasma environment. Our results show that the temperature ratio of heavy ions to electrons can considerably affect the dispersion, propagation, and electromagnetic polarizations of the KAWs. In particular, the temperature ratio can increase the ratio of parallel to perpendicular electric fields and the normalized electric to magnetic field ratio, the variations of which are greatly different in regions with a high heavy ion temperature and with a low one. The results may help to understand the physical mechanism of some energization processes of heavy ions in the solar and space plasma environment. Effects of the ratio of electron thermal to Alfven speeds and the heavy ion abundance on these parameters are also discussed.

Ion temperature profiles in JET

International Nuclear Information System (INIS)

Hellermann, M. von; Mandl, W.; Summers, H.P.; Weisen, H.

1989-01-01

The results presented in this paper have shown some extreme cases of ion temperature profiles illustrating the different operation modes of the JET tokamak. In the three examples of low-density high temperature, high-density moderates and high-density high-confinement plasmas comparable values of a maximum fusion product n d T i τ E in the order of 10 20 keV m -3 sec are achieved. (author) 1 ref., 7 figs

Spin-State-Controlled Photodissociation of Iron(III) Azide to an Iron(V) Nitride Complex

Czech Academy of Sciences Publication Activity Database

Andris, E.; Navrátil, R.; Jašík, J.; Sabenya, G.; Costas, M.; Srnec, Martin; Roithová, J.

2017-01-01

Roč. 56, č. 45 (2017), s. 14057-14060 ISSN 1521-3773 Institutional support: RVO:61388955 Keywords : Ion spectroscopy * Iron(V) nitride * Photodissociation Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry

The structure and function of supported molybdenum nitride and molybdenum carbide hydrotreating catalysts

Science.gov (United States)

Dolce, Gregory Martin

1997-11-01

A series of gamma-Alsb2Osb3 supported molybdenum nitrides and carbides were prepared by the temperature programmed reaction of supported molybdates with ammonia and methane/hydrogen mixtures, respectively. In the first part of this research, the effects of synthesis heating rates and molybdenum loading on the catalytic properties of the materials were examined. A significant amount of excess carbon was deposited on the surface of the carbides during synthesis. The materials consisted of small particles which were very highly dispersed. Oxygen chemisorption indicated that the nitride particles may have been two-dimensional. The dispersion of the carbides, however, appeared to decrease as the loading increased. The catalysts were evaluated for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). The molybdenum loading had the largest effect on the activity of the materials. For the nitrides, the HDN and HDS activities were inverse functions of the loading. This suggested that the most active HDN and HDS sites were located at the perimeter of the two-dimensional particles. The HDN and HDS activities of the carbides followed the same trend as the oxygen uptake. This result suggested that oxygen titrated the active sites on the supported carbides. Selected catalysts were evaluated for methylcarbazole HDN, dibenzothiophene HDS, and dibenzofuran HDO. The activity and selectivity of the nitrides and carbides were competitive with a presulfided commercial catalyst. In the second part of this work, a series of supported nitrides and carbides were prepared using a wider range of loadings (5-30 wt% Mo). Thermogravimetric analysis was used to determine the temperature at which excess carbon was deposited on the carbides. By modifying the synthesis parameters, the deposition of excess carbon was effectively inhibited. The dispersions of the supported nitrides and carbides were constant and suggested that the materials consisted of two

The ionization length in plasmas with finite temperature ion sources

Science.gov (United States)

Jelić, N.; Kos, L.; Tskhakaya, D. D.; Duhovnik, J.

2009-12-01

The ionization length is an important quantity which up to now has been precisely determined only in plasmas which assume that the ions are born at rest, i.e., in discharges known as "cold ion-source" plasmas. Presented here are the results of our calculations of the ionization lengths in plasmas with an arbitrary ion source temperature. Harrison and Thompson (H&T) [Proc. Phys. Soc. 74, 145 (1959)] found the values of this quantity for the cases of several ion strength potential profiles in the well-known Tonks-Langmuir [Phys. Rev. 34, 876 (1929)] discharge, which is characterized by "cold" ion temperature. This scenario is also known as the "singular" ion-source discharge. The H&T analytic result covers cases of ion sources proportional to exp(βΦ) with Φ the normalized plasma potential and β =0,1,2 values, which correspond to particular physical scenarios. Many years following H&T's work, Bissell and Johnson (B&J) [Phys. Fluids 30, 779 (1987)] developed a model with the so-called "warm" ion-source temperature, i.e., "regular" ion source, under B&J's particular assumption that the ionization strength is proportional to the local electron density. However, it appears that B&J were not interested in determining the ionization length at all. The importance of this quantity to theoretical modeling was recognized by Riemann, who recently answered all the questions of the most advanced up-to-date plasma-sheath boundary theory with cold ions [K.-U. Riemann, Phys. Plasmas 13, 063508 (2006)] but still without the stiff warm ion-source case solution, which is highly resistant to solution via any available analytic method. The present article is an extension of H&T's results obtained for a single point only with ion source temperature Tn=0 to arbitrary finite ion source temperatures. The approach applied in this work is based on the method recently developed by Kos et al. [Phys. Plasmas 16, 093503 (2009)].

Temperature dependence of the optical properties of ion-beam sputtered ZrN films

Energy Technology Data Exchange (ETDEWEB)

Larijani, M.M. [NSTRI, AEOI, Radiation Applications Research School, Karaj (Iran, Islamic Republic of); Kiani, M. [Azad University, South Tehran Branch, Department of Physics, Tehran (Iran, Islamic Republic of); Jafari-Khamse, E. [NSTRI, AEOI, Radiation Applications Research School, Karaj (Iran, Islamic Republic of); University of Kashan, Department of Physics, Kashan (Iran, Islamic Republic of); Fathollahi, V. [Nuclear Science Research School, NSTRI, Tehran (Iran, Islamic Republic of)

2014-11-15

The reflectivity of sputtered Zirconium nitride films on glass substrate has been investigated in the spectral energy range of 0.8-6.1 eV as a function of deposition temperature varying between 373 and 723 K. Optical constants of the prepared films have been determined using the Drude analysis. Experimental results showed strong dependency of optical properties of the films, such as optical resistivity on the substrate temperature. The temperature increase of the substrate has shown an increase in both the plasmon frequency and electron scattering time. The electrical behavior of the films showed a good agreement between their optical and electrical resistivity. (orig.)

Erosion–corrosion and corrosion properties of DLC coated low temperature Erosion–corrosion and corrosion properties of DLC coated low temperature

DEFF Research Database (Denmark)

Jellesen, Morten Stendahl; Christiansen, Thomas; Hilbert, Lisbeth Rischel

2009-01-01

of AISI 316 as substrate for DLC coatings are investigated. Corrosion and erosion–corrosion measurements were carried out on low temperature nitrided stainless steel AISI 316 and on low temperature nitrided stainless steel AISI 316 with a top layer of DLC. The combination of DLC and low temperature...... nitriding dramatically reduces the amount of erosion–corrosion of stainless steel under impingement of particles in a corrosive medium....

Plasma nitriding of a precipitation hardening stainless steel to improve erosion and corrosion resistance

International Nuclear Information System (INIS)

Cabo, Amado; Bruhl, Sonia P.; Vaca, Laura S.; Charadia, Raul Charadia

2010-01-01

Precipitation hardening stainless steels are used as structural materials in the aircraft and the chemical industry because of their good combination of mechanical and corrosion properties. The aim of this work is to analyze the structural changes produced by plasma nitriding in the near surface of Thyroplast PH X Supra®, a PH stainless steel from ThyssenKrupp, and to study the effect of nitriding parameters in wear and corrosion resistance. Samples were first aged and then nitriding was carried out in an industrial facility at two temperatures, with two different nitrogen partial pressures in the gas mixture. After nitriding, samples were cut, polished, mounted in resin and etched with Vilella reagent to reveal the nitrided case. Nitrided structure was also analyzed with XRD. Erosion/Corrosion was tested against sea water and sand flux, and corrosion in a salt spray fog (ASTM B117). All nitrided samples presented high hardness. Samples nitrided at 390 deg C with different nitrogen partial pressure showed similar erosion resistance against water and sand flux. The erosion resistance of the nitrided samples at 500 deg C was the highest and XRD revealed nitrides. Corrosion resistance, on the contrary, was diminished; the samples suffered of general corrosion during the salt spray fog test. (author)

Microstructural evolution of nanochannel CrN films under ion irradiation at elevated temperature and post-irradiation annealing

Science.gov (United States)

Tang, Jun; Hong, Mengqing; Wang, Yongqiang; Qin, Wenjing; Ren, Feng; Dong, Lan; Wang, Hui; Hu, Lulu; Cai, Guangxu; Jiang, Changzhong

2018-03-01

High-performance radiation tolerance materials are crucial for the success of future advanced nuclear reactors. In this paper, we present a further investigation that the "vein-like" nanochannel films can enhance radiation tolerance under ion irradiation at high temperature and post-irradiation annealing. The chromium nitride (CrN) nanochannel films with different nanochannel densities and the compact CrN film are chosen as a model system for these studies. Microstructural evolution of these films were investigated using Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Elastic Recoil Detection (ERD) and Grazing Incidence X-ray Diffraction (GIXRD). Under the high fluence He+ ion irradiation at 500 °C, small He bubbles with low bubble densities are observed in the irradiated nanochannel CrN films, while the aligned large He bubbles, blistering and texture reconstruction are found in the irradiated compact CrN film. For the heavy Ar2+ ion irradiation at 500 °C, the microstructure of the nanochannel CrN RT film is more stable than that of the compact CrN film due to the effective releasing of defects via the nanochannel structure. Under the He+ ion irradiation and subsequent annealing, compared with the compact film, the nanochannel films have excellent performance for the suppression of He bubble growth and possess the strong microstructural stability. Basing on the analysis on the sizes and number densities of bubbles as well as the concentrations of He retained in the nanochannel CrN films and the compact CrN film under different experimental conditions, potential mechanism for the enhanced radiation tolerance are discussed. Nanochannels play a crucial role on the release of He/defects under ion irradiation. We conclude that the tailored "vein-like" nanochannel structure may be used as advanced radiation tolerance materials for future nuclear reactors.

Theory of ion-temperature-gradient-driven turbulence in tokamaks

International Nuclear Information System (INIS)

Lee, G.S.; Diamond, P.H.

1986-01-01

An analytic theory of ion-temperature-gradient-driven turbulence in tokamaks is presented. Energy-conserving, renormalized spectrum equations are derived and solved in order to obtain the spectra of stationary ion-temperature-gradient-driven turbulence. Corrections to mixing-length estimates are calculated explicitly. The resulting anomalous ion thermal diffusivity chi/sub i/ = 0.4[(π/2)ln(1 + eta/sub i/)] 2 [(1 + eta/sub i/)/tau] 2 rho/sub s/ 2 c/sub s//L/sub s/ is derived and is found to be consistent with experimentally-deduced thermal diffusivities. The associated electron thermal diffusivity and particle and heat-pinch velocities are also calculated. The effect of impurity gradients on saturated ion-temperature-gradient-driven turbulence is discussed and a related explanation of density profile steepening during Z-mode operation is proposed. 35 refs., 4 figs

Computational and experimental study of copper–gold nitride formation

Energy Technology Data Exchange (ETDEWEB)

Ponce-Cázares, I., E-mail: iponce@cnyn.unam.mx [Centro de Investigación Científica y de Educación Superior de Ensenada (CICESE), Carretera Tijuana-Ensenada No. 3918, A. Postal 360, 22860 Ensenada, B.C. (Mexico); Soto, G., E-mail: gerardo@cnyn.unam.mx [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico); Moreno-Armenta, Ma. Guadalupe, E-mail: moreno@cnyn.unam.mx [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico); De la Cruz, W., E-mail: wencel@cnyn.unam.mx [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico)

2015-08-25

Highlights: • The new Cu{sub 3}Au-nitride compound was successfully grown by the sputtering method. • This material is Cu{sub 3}Au{sub 0.5}N with cubic system (Pm3m space group), where the gold randomly occupies half of the 1a Wyckoff sites. • The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature. - Abstract: This work investigates the formation of a Cu{sub 3}Au-nitride alloy using experimental and computational methods. For this purpose, we prepared a custom-made Cu–Au target and then hit it with argon ions in the presence of molecular nitrogen that produced a film on Corning glass. This film was analyzed using spectroscopic and diffraction techniques. The four-point-probe method and Tauc plots were applied to determine the electrical and optical properties of this thin film. Using first principle calculations a structural model was constructed that validated our observations. The crystalline system that we used was cubic (Pm3m space group) with half the sites filled with Au randomly. The composition was close to Cu{sub 3}Au{sub 0.5}N. In agreement with the electrical measurements and calculations, the Cu{sub 3}Au{sub 0.5}N band structure was highly affected by the Au incorporation since the electrical resistance and carrier density were in the 10{sup −3} Ω cm and 10{sup 22} cm{sup −3} ranges, respectively, and the optical gap decreased 0.61 eV with respect to the Cu{sub 3}N. The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature; this should give it great potential for use in the optoelectronics industry.

Computational and experimental study of copper–gold nitride formation

International Nuclear Information System (INIS)

Ponce-Cázares, I.; Soto, G.; Moreno-Armenta, Ma. Guadalupe; De la Cruz, W.

2015-01-01

Highlights: • The new Cu 3 Au-nitride compound was successfully grown by the sputtering method. • This material is Cu 3 Au 0.5 N with cubic system (Pm3m space group), where the gold randomly occupies half of the 1a Wyckoff sites. • The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature. - Abstract: This work investigates the formation of a Cu 3 Au-nitride alloy using experimental and computational methods. For this purpose, we prepared a custom-made Cu–Au target and then hit it with argon ions in the presence of molecular nitrogen that produced a film on Corning glass. This film was analyzed using spectroscopic and diffraction techniques. The four-point-probe method and Tauc plots were applied to determine the electrical and optical properties of this thin film. Using first principle calculations a structural model was constructed that validated our observations. The crystalline system that we used was cubic (Pm3m space group) with half the sites filled with Au randomly. The composition was close to Cu 3 Au 0.5 N. In agreement with the electrical measurements and calculations, the Cu 3 Au 0.5 N band structure was highly affected by the Au incorporation since the electrical resistance and carrier density were in the 10 −3 Ω cm and 10 22 cm −3 ranges, respectively, and the optical gap decreased 0.61 eV with respect to the Cu 3 N. The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature; this should give it great potential for use in the optoelectronics industry

Kinetic modelling of chlorination of nitrided ilmenite using MATLAB

Energy Technology Data Exchange (ETDEWEB)

Ramakrishnan, Sivakumar, E-mail: srsivakumar@usm.my; Kwok, Teong Chen, E-mail: ctck@live.com; Hamid, Sheikh Abdul Rezan Sheikh Abdul, E-mail: rezanshk@gmail.com [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300, Nibong Tebal, Penang (Malaysia)

2016-07-19

In the present study, chlorination of nitride ilmenite using 2{sup k} factorial design was investigated. The reduction experiments were carried out in a temperature range of 400°C to 500°C, chlorination duration from 1 hour to 3 hours and using different type of carbon reactant. Phases of raw materials and reduced samples were analyzed by X-ray diffraction (XRD). Ilmenite was reduced to TiO{sub x}C{sub y}N{sub z} through carbothermal and nitridation for further chlorination into titanium tetrachloride. The Design of Experiment analysis suggested that the types of carbon reactant contribute most influence to the extent of chlorination of nitride ilmenite. The extent of chlorination was highest at 500°C with 3 hours chlorination time and carbon nanotube as carbon reactant.

Nitride stabilized core/shell nanoparticles

Science.gov (United States)

Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

2018-01-30

Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

Global versus local mechanisms of temperature sensing in ion channels.

Science.gov (United States)

Arrigoni, Cristina; Minor, Daniel L

2018-05-01

Ion channels turn diverse types of inputs, ranging from neurotransmitters to physical forces, into electrical signals. Channel responses to ligands generally rely on binding to discrete sensor domains that are coupled to the portion of the channel responsible for ion permeation. By contrast, sensing physical cues such as voltage, pressure, and temperature arises from more varied mechanisms. Voltage is commonly sensed by a local, domain-based strategy, whereas the predominant paradigm for pressure sensing employs a global response in channel structure to membrane tension changes. Temperature sensing has been the most challenging response to understand and whether discrete sensor domains exist for pressure and temperature has been the subject of much investigation and debate. Recent exciting advances have uncovered discrete sensor modules for pressure and temperature in force-sensitive and thermal-sensitive ion channels, respectively. In particular, characterization of bacterial voltage-gated sodium channel (BacNa V ) thermal responses has identified a coiled-coil thermosensor that controls channel function through a temperature-dependent unfolding event. This coiled-coil thermosensor blueprint recurs in other temperature sensitive ion channels and thermosensitive proteins. Together with the identification of ion channel pressure sensing domains, these examples demonstrate that "local" domain-based solutions for sensing force and temperature exist and highlight the diversity of both global and local strategies that channels use to sense physical inputs. The modular nature of these newly discovered physical signal sensors provides opportunities to engineer novel pressure-sensitive and thermosensitive proteins and raises new questions about how such modular sensors may have evolved and empowered ion channel pores with new sensibilities.

Treatment of nitridation by microwave post discharge plasma in an AISI 4140 steel

International Nuclear Information System (INIS)

Medina F, A.; Rodriguez L, V.; Zamora R, L.; Oseguera P, J.

1998-01-01

The objective of this work is to determine through X-ray diffraction, microhardness measurement and scanning electron microscopy those main operation parameters of the microwave post discharge treatment (temperature of treatment, gas mixture and permanence time) nitriding an AISI 4140 steel and to characterize the compact layer of nitrides formed during the treatment. (Author)

Single-ion polymer electrolyte membranes enable lithium-ion batteries with a broad operating temperature range.

Science.gov (United States)

Cai, Weiwei; Zhang, Yunfeng; Li, Jing; Sun, Yubao; Cheng, Hansong

2014-04-01

Conductive processes involving lithium ions are analyzed in detail from a mechanistic perspective, and demonstrate that single ion polymeric electrolyte (SIPE) membranes can be used in lithium-ion batteries with a wide operating temperature range (25-80 °C) through systematic optimization of electrodes and electrode/electrolyte interfaces, in sharp contrast to other batteries equipped with SIPE membranes that display appreciable operability only at elevated temperatures (>60 °C). The performance is comparable to that of batteries using liquid electrolyte of inorganic salt, and the batteries exhibit excellent cycle life and rate performance. This significant widening of battery operation temperatures coupled with the inherent flexibility and robustness of the SIPE membranes makes it possible to develop thin and flexible Li-ion batteries for a broad range of applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hydrotreatment activities of supported molybdenum nitrides and carbides

Energy Technology Data Exchange (ETDEWEB)

Dolce, G.M.; Savage, P.E.; Thompson, L.T. [University of Michigan, Ann Arbor, MI (United States). Dept. of Chemical Engineering

1997-05-01

The growing need for alternative sources of transportation fuels encourages the development of new hydrotreatment catalysts. These catalysts must be active and more hydrogen efficient than the current commercial hydrotreatment catalysts. Molybdenum nitrides and carbides are attractive candidate materials possessing properties that are comparable or superior to those of commercial sulfide catalysts. This research investigated the catalytic properties of {gamma}-Al{sub 2}O{sub 3}-supported molybdenum nitrides and carbides. These catalysts were synthesized via temperature-programmed reaction of supported molybdenum oxides with ammonia or methane/hydrogen mixtures. Phase constituents and compositions were determined by X-ray diffraction, elemental analysis, and neutral activation analysis. Oxygen chemisorption was used to probe the surface properties of the catalysts. Specific activities of the molybdenum nitrides and carbides were competitive with those of a commercial sulfide catalyst for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). For HDN and HDS, the catalytic activity on a molybdenum basis was a strong inverse function of the molybdenum loading. Product distributions of the HDN, HDO and HDS of a variety of heteroatom compounds indicated that several of the nitrides and carbides were more hydrogen efficient than the sulfide catalyst. 35 refs., 8 figs., 7 tabs.

{sup 14}N depth profiles in Ti and Ti6Al4V nitrided by various methods, measured by nuclear reaction analysis

Energy Technology Data Exchange (ETDEWEB)

Vickridge, I.; Trompetter, B. [Institute of Geological and Nuclear Sciences Ltd., Lower Hutt (New Zealand); Brown, I. [Industrial Research Ltd, Lower Hutt (New Zealand)

1993-12-31

Titanium alloys have desirable mechanical properties for applications in many areas, but their surface properties, such as friction coefficient, hardness, and wear and corrosion resistance often need to be enhanced. This may be accomplished by forming a thin layer of titanium nitride on the surface, by such methods as thermal nitriding, Ion Beam Assisted Deposition (IBAD), sol-gel technology, or ion implantation. Ion Beam Analysis is assuming an increasing importance for characterising the composition of the outer few microns since it is the only technique that can rapidly yield quantitative concentration depth profiles of {sup 14}N with minimal disruption of the analysed region. 8 refs., 7 figs.

{sup 14}N depth profiles in Ti and Ti6Al4V nitrided by various methods, measured by nuclear reaction analysis

Energy Technology Data Exchange (ETDEWEB)

Vickridge, I; Trompetter, B [Institute of Geological and Nuclear Sciences Ltd., Lower Hutt (New Zealand); Brown, I [Industrial Research Ltd, Lower Hutt (New Zealand)

1994-12-31

Titanium alloys have desirable mechanical properties for applications in many areas, but their surface properties, such as friction coefficient, hardness, and wear and corrosion resistance often need to be enhanced. This may be accomplished by forming a thin layer of titanium nitride on the surface, by such methods as thermal nitriding, Ion Beam Assisted Deposition (IBAD), sol-gel technology, or ion implantation. Ion Beam Analysis is assuming an increasing importance for characterising the composition of the outer few microns since it is the only technique that can rapidly yield quantitative concentration depth profiles of {sup 14}N with minimal disruption of the analysed region. 8 refs., 7 figs.

High-temperature thermodynamic activities of zirconium in platinum alloys determined by nitrogen-nitride equilibria

International Nuclear Information System (INIS)

Goodman, D.A.

1980-05-01

A high-temperature nitrogen-nitride equilibrium apparatus is constructed for the study of alloy thermodynamics to 2300 0 C. Zirconium-platinum alloys are studied by means of the reaction 9ZrN + 11Pt → Zr 9 Pt 11 + 9/2 N 2 . Carful attention is paid to the problems of diffusion-limited reaction and ternary phase formation. The results of this study are and a/sub Zr//sup 1985 0 C/ = 2.4 x 10 -4 in Zr 9 Pt 11 ΔG/sub f 1985 0 C/ 0 Zr 9 Pt 11 less than or equal to -16.6 kcal/g atom. These results are in full accord with the valence bond theory developed by Engel and Brewer; this confirms their prediction of an unusual interaction of these alloys

Growth of group III nitride films by pulsed electron beam deposition

International Nuclear Information System (INIS)

Ohta, J.; Sakurada, K.; Shih, F.-Y.; Kobayashi, A.; Fujioka, H.

2009-01-01

We have grown group III nitride films on Al 2 O 3 (0 0 0 1), 6H-SiC (0 0 0 1), and ZnO (0001-bar) substrates by pulsed electron beam deposition (PED) for the first time and investigated their characteristics. We found that c-plane AlN and GaN grow epitaxially on these substrates. It has been revealed that the growth of GaN on atomically flat 6H-SiC substrates starts with the three-dimensional mode and eventually changes into the two-dimensional mode. The GaN films exhibited strong near-band-edge emission in their room temperature photoluminescence spectra. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C. - Graphical abstract: We have grown group III nitride films by pulsed electron beam deposition (PED) and found that the films of group III nitrides grow epitaxially on 6H-SiC and Al 2 O 3 substrates. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Energy Technology Data Exchange (ETDEWEB)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Hernandez-Balderrama, Luis H.; Haidet, Brian B.; Alden, Dorian; Franke, Alexander; Sarkar, Biplab; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Hayden Breckenridge, M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); REU, Physics Department at Wofford College, Spartanburg, South Carolina 29303 (United States)

2016-04-14

In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that at free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.

Microstructure and corrosion resistance of nitrogen-rich surface layers on AISI 304 stainless steel by rapid nitriding in a hollow cathode discharge

Science.gov (United States)

Li, Yang; He, Yongyong; Zhang, Shangzhou; Wang, Wei; Zhu, Yijie

2018-01-01

Nitriding treatments have been successfully applied to austenitic stainless steels to improve their hardness and tribological properties. However, at temperatures above 450 °C, conventional plasma nitriding processes decrease the corrosion resistance due to the formation of CrN phases within the modified layer. In this work, AISI 304 austenitic stainless steels were efficiently treated by rapid plasma nitriding at a high temperature of 530 °C in a hollow cathode discharge. The enhanced ionization obtained in the hollow cathode configuration provided a high current density and, consequently, a high temperature could be attained in a short time. The nitrided layers were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The results indicated that the dual-layer structure of the nitrided layer consists of a high-N face-centered cubic structure with a free CrN precipitate outer (top) layer and a nitrogen-expanded austenite S-phase bottom layer. The rapid nitriding-assisted hollow cathode discharge technique permits the use of high temperatures, as high as 530 °C, without promoting degradation in the corrosion resistance of stainless steel.

The Influence of Plasma-Based Nitriding and Oxidizing Treatments on the Mechanical and Corrosion Properties of CoCrMo Biomedical Alloy

Science.gov (United States)

Noli, Fotini; Pichon, Luc; Öztürk, Orhan

2018-04-01

Plasma-based nitriding and/or oxidizing treatments were applied to CoCrMo alloy to improve its surface mechanical properties and corrosion resistance for biomedical applications. Three treatments were performed. A set of CoCrMo samples has been subjected to nitriding at moderate temperatures ( 400 °C). A second set of CoCrMo samples was oxidized at 395 °C in pure O2. The last set of CoCrMo samples was nitrided and subsequently oxidized under the experimental conditions of previous sets (double treatment). The microstructure and morphology of the layers formed on the CoCrMo alloy were investigated by X-ray diffraction, Atomic Force Microscopy, and Scanning Electron Microscopy. In addition, nitrogen and oxygen profiles were determined by Glow Discharge Optical Emission Spectroscopy, Rutherford Backscattering Spectroscopy, Energy-Dispersive X-ray, and Nuclear Reaction Analysis. Significant improvement of the Vickers hardness of the CoCrMo samples after plasma nitriding was observed due to the supersaturated nitrogen solution and the formation of an expanded FCC γ N phase and CrN precipitates. In the case of the oxidized samples, Vickers hardness improvement was minimal. The corrosion behavior of the samples was investigated in simulated body fluid (0.9 pct NaCl solution at 37 °C) using electrochemical techniques (potentiodynamic polarization and cyclic voltammetry). The concentration of metal ions released from the CoCrMo surfaces was determined by Instrumental Neutron Activation Analysis. The experimental results clearly indicate that the CoCrMo surface subjected to the double surface treatment consisting in plasma nitriding and plasma oxidizing exhibited lower deterioration and better resistance to corrosion compared to the nitrided, oxidized, and untreated samples. This enhancement is believed to be due to the formation of a thicker and more stable layer.

Duplex surface treatment of AISI 1045 steel via plasma nitriding of chromized layer

International Nuclear Information System (INIS)

Hakami, F.; Sohi, M. Heydarzadeh; Ghani, J. Rasizadeh

2011-01-01

In this work AISI 1045 steel were duplex treated via plasma nitriding of chromized layer. Samples were pack chromized by using a powder mixture consisting of ferrochromium, ammonium chloride and alumina at 1273 K for 5 h. The samples were then plasma-nitrided for 5 h at 803 K and 823 K, in a gas mixture of 75%N 2 + 25%H 2 . The treated specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Vickers micro-hardness test. The thickness of chromized layer before nitriding was about 8 μm and it was increased after plasma nitriding. According to XRD analysis, the chromized layer was composed of chromium and iron carbides. Plasma nitriding of chromized layer resulted in the formation of chromium and iron nitrides and carbides. The hardness of the duplex layers was significantly higher than the hardness of the base material or chromized layer. The main cause of the large improvement in surface hardness was due to the formation of Cr x N and Fe x N phases in the duplex treated layers. Increasing of nitriding temperature from 803 to 823 K enhanced the formation of CrN in the duplex treated layer and increased the thickness of the nitrided layer.

Research and development of nitride fuel cycle technology in Europe

International Nuclear Information System (INIS)

Wallenius, Janne

2004-01-01

Research and development on nitride fuels for minor actinide burning in accelerator driven systems is performed in Europe in context of the CONFIRM project. Dry and wet methods for fabrication of uranium free nitride fuels have been developed with the assistance of thermo-chemical modelling. Four (Pu, Zr) pins have been fabricated by PSI and will be irradiated in Studsvik at a rating of 40-50 kW/m. The thermal conductivity of (Pu, Zr)N has been measured and was found to be in agreement with earlier theoretical assessments. Safety modeling indicates that americium bearing nitride fuels, in spite of their relatively poor high temperature stability under atmospheric pressure, can survive power transients as long as the fuel cladding remains intact. (author)

Temperature effect on X-ray photoelectron spectra of 3d transition metal ions

International Nuclear Information System (INIS)

Kochur, A.G.; Kozakov, A.T.; Yavna, V.A.; Daniel, Ph.

2014-01-01

Highlights: • 2p XPS of 3d metal ions are calculated in an isolated ion approximation. • 2p XPS of Ti, V, Cr, Mn, Fe ions are temperature dependent even at room temperature. • Temperature effect on 3p XPS is slight. • No temperature effect on 3s XPS is discovered. - Abstract: Temperature effect on 2p- 3s- and 3p X-ray photoelectron spectra (XPS) of various ions of Ti, V, Cr, Mn and Fe is studied theoretically within an isolated ion approximation. It is shown that the 2p XPS of those ions are temperature dependent even at room temperature due to a very slight energy splitting between the ground-state-term total-momentum J-components which can be thermally populated. Most significant temperature effect is expected in the 2p-spectra of Ti 2+ (3d 2 ), V 2+ (3d 3 ), Cr 2+ (3d 4 ), Mn 3+ (3d 4 ), and Mn 3+ (3d 4 ) ions. The temperature effect on 3p XPS is slight. No temperature effect on 3s XPS is expected

Morphologic and crystallographic studies on electrochemically formed chromium nitride films

Energy Technology Data Exchange (ETDEWEB)

Amezawa, Koji [Graduate School of Environmental Studies, Tohoku University, 6-6-01 Aramaki-Aoba, Aoba-ku, Sendai 980-8579 (Japan); Goto, Takuya; Tsujimura, Hiroyuki; Hagiwara, Rika; Tomii, Yoichi [Graduate School of Energy Science, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan); Uchimoto, Yoshiharu [Graduate School of Human and Environmental Studies, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan); Ito, Yasuhiko [Department of Environmental Systems Science, Faculty of Engineering, Doshisya University, Kyotanabe-shi, Kyoto 610-0321 (Japan)

2007-11-20

Chromium nitride films were prepared by anodically oxidizing nitride ions at 0.4-1.5 V versus Li{sup +}/Li on chromium substrates in molten LiCl-KCl-Li{sub 3}N systems at 723 K. A crystalline Cr{sub 2}N film was successfully prepared at 0.4-1.4 V, and was thicker at more positive electrolytic potential. At 1.5 V, a Cr-N film could be also obtained, but its growth rate was relatively low. The film prepared at 1.5 V consisted of two distinctive layers. The surface layer was amorphous Cr-N containing crystalline CrN particles, and the inner layer was crystalline CrN. It was considered the existence of the amorphous phase suppressed the film growth. (author)

Ion filter for high temperature cleaning

International Nuclear Information System (INIS)

Kutomi, Yasuhiro; Nakamori, Masaharu.

1994-01-01

A porous ceramic pipe mainly comprising alumina is used as a base pipe, and then crud and radioactive ion adsorbing materials in high temperature and high pressure water mainly comprising a FeTiO 3 compound are flame-coated on the outer surface thereof to a film thickness of about 100 to 300μ m as an aimed value by an acetylene flame-coating method. The flame-coated FeTiO 3 layer is also porous, so that high temperature and high pressure water to be cleaned can pass through from the inside to the outside of the pipe. Cruds can be removed and radioactive ions can be adsorbed during passage. Since all the operations can be conducted at high temperature and high pressure state, cooling is no more necessary for the high temperature and high pressure water to be cleaned, heat efficiency of the plant can be improved and a cooling facility can be saved. Further, since the flame-coating of FeTiO 3 to the porous ceramic pipe can be conducted extremely easily compared with production of a sintering product, cost for the production of filter elements can be saved remarkably. (T.M.)

The influence of powder composition and sintering temperature on transformation kinetics, structure and mechanical properties of hot-pressed silicon nitride

International Nuclear Information System (INIS)

Knoch, H.; Ziegler, G.

1977-01-01

The strength at room temperature of hot-pressed silicon nitride is strongly dependent on the structure which in turn depends on powder composition and process parameters. Connections between production conditions (MgO content, pressing temperature, pressing time), structure (α/β content and morphology), and the properties at room temperature are discussed. The growth of oblong β grains - as a direct result of phase transition from α- to β-Si 3 N 4 - results in microstructural meshing and thus in a higher strength. Optimum mechanical properties are achieved after full phase transformation and with a microstructure as fine as possible. The direct connection between strength and transformed β fraction indicates a possible way for a relatively fast determination of optimum properties for a given initial powder. (orig.) [de

Internal nitridation of nickel-base alloys; Innere Nitrierung von Nickelbasis-Legierungen

Energy Technology Data Exchange (ETDEWEB)

Krupp, U.; Christ, H.J. [Siegen Univ. (Gesamthochschule) (Germany). Inst. fuer Werkstofftechnik

1998-12-31

The chromuim concentration is the crucial variable in nitridation processes in nickel-base alloys. Extensive nitridation experiments with various specimen alloys of the system Ni-Cr-Al-Ti have shown that the Cr itself starts to form nitrides as from elevated initial concentrations of about 10 to 20 weight%, (depending on temperature), but that lower concentrations have an earlier effect in that they induce a considerable increase in the N-solubility of the nickel-base alloys. This causes an accelerated nitridation attack on the alloying elements Ti and Al. Apart from experimental detection and analysis, the phenomenon of internal nitridation could be described as well by means of a mathematical model calculating the diffusion with the finite-differences method and determining the precipitation thermodynamics by way of integrated equilibrium calculations. (orig./CB) [Deutsch] Im Verlauf der Hochtemperaturkorrosion von Nickelbasis-Superlegierungen kann durch beanspruchungsbedingte Schaedigungen der Oxiddeckschicht ein Verlust der Schutzwirkung erfolgen und als Konsequenz Stickstoff aus der Atmosphaere in den Werkstoff eindringen. Der eindiffundierende Stickstoff bildet vor allem mit den Legierungselementen Al, Cr und Ti Nitridausscheidungen, die zu einer relativ rasch fortschreitenden Schaedigung fuehren koennen. Eine bedeutende Rolle bei diesen Nitrierungsprozessen in Nickelbasislegierungen spielt die Cr-Konzentration in der Legierung. So ergaben umfangreiche Nitrierungsexperimente an verschiedenen Modellegierungen des Systems Ni-Cr-Al-Ti, dass Cr zwar selbst erst ab Ausgangskonzentrationen von ca. 10-20 Gew.% (abhaengig von der Temperatur) Nitride bildet, allerdings bereits bei geringen Konzentrationen die N-Loeslichkeit von Nickelbasis-Legierungen entscheidend erhoeht. Dies hat zur Folge, dass es zu einem beschleunigten Nitrierungsangriff auf die Legierungselemente Ti und Al kommt. Neben den experimentellen Untersuchungen konnte das Phaenomen der inneren

Ion Exchange Temperature Testing with SRF Resin - 12088

Energy Technology Data Exchange (ETDEWEB)

Russell, R.L.; Rinehart, D.E.; Brown, G.N.; Peterson, R.A. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States)

2012-07-01

Ion exchange using the Spherical Resorcinol-Formaldehyde (SRF) resin has been selected by the U.S. Department of Energy's Office of River Protection for use in the Pretreatment Facility of the Hanford Tank Waste Treatment and Immobilization Plant (WTP) and for potential application in an at-tank deployment for removing Cs-137. Recent proposed changes to the WTP ion exchange process baseline indicate that higher temperatures (50 deg. C) to alleviate post-filtration precipitation issues prior to reaching the ion exchange columns may be required. Therefore, it is important to understand the behavior of SRF resin performance under the conditions expected with the new equipment and process changes. This research examined the impact of elevated temperature on resin loading and resin degradation during extended solution flow at elevated temperature (45 deg., 50 deg., 55 deg., 60 deg., 65 deg., 75 deg. C). Testing for extended times at elevated temperatures showed that the resin does degrade and loading capacity is reduced at and above 45 deg. C. Above 60 deg. C the resin appears to not load at all. It was observed that the resin disintegrated at 75 deg. C until not much was left and partially disintegrated at 65 deg. C, which caused the column to plug in both tests after ∼336 hours. The results indicate that WTP will lose resin loading capacity if the ion exchange process is performed above 25 deg. C, and the resin will disintegrate above 65 deg. C. Therefore, WTP will have a restricted operating range of temperatures to perform the ion exchange process with this resin. PNNL and WTP are currently evaluating the operating limits of the resin in further detail. Aging in 0.5 M HNO{sub 3} also caused the resin to lose capacity above 25 deg. C and to completely dissolve at 55 deg. C. Again, WTP will have a restricted operating range of temperatures when eluting the resin with nitric acid in order to maintain resin loading capacity and avoid disintegration of the resin

The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

International Nuclear Information System (INIS)

Siddiqua, Poppy; O'Leary, Stephen K.

2016-01-01

Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the doping concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the doping concentration selection. The device consequences of these results are then explored.

Tripolar vortex formation in dense quantum plasma with ion-temperature-gradients

Science.gov (United States)

Qamar, Anisa; Ata-ur-Rahman, Mirza, Arshad M.

2012-05-01

We have derived system of nonlinear equations governing the dynamics of low-frequency electrostatic toroidal ion-temperature-gradient mode for dense quantum magnetoplasma. For some specific profiles of the equilibrium density, temperature, and ion velocity gradients, the nonlinear equations admit a stationary solution in the form of a tripolar vortex. These results are relevant to understand nonlinear structure formation in dense quantum plasmas in the presence of equilibrium ion-temperature and density gradients.

Tripolar vortex formation in dense quantum plasma with ion-temperature-gradients

Energy Technology Data Exchange (ETDEWEB)

Qamar, Anisa; Ata-ur-Rahman [Institute of Physics and Electronics, University of Peshawar, Khyber Pakhtoon Khwa 25000 (Pakistan); National Center for Physics Shahdrah Valley Road, Islamabad 44000 (Pakistan); Mirza, Arshad M. [Theoretical Plasma Physics Group, Physics Department, Quaid-i-Azam University, Islamabad 45320 (Pakistan)

2012-05-15

We have derived system of nonlinear equations governing the dynamics of low-frequency electrostatic toroidal ion-temperature-gradient mode for dense quantum magnetoplasma. For some specific profiles of the equilibrium density, temperature, and ion velocity gradients, the nonlinear equations admit a stationary solution in the form of a tripolar vortex. These results are relevant to understand nonlinear structure formation in dense quantum plasmas in the presence of equilibrium ion-temperature and density gradients.

Tripolar vortex formation in dense quantum plasma with ion-temperature-gradients

International Nuclear Information System (INIS)

Qamar, Anisa; Ata-ur-Rahman; Mirza, Arshad M.

2012-01-01

We have derived system of nonlinear equations governing the dynamics of low-frequency electrostatic toroidal ion-temperature-gradient mode for dense quantum magnetoplasma. For some specific profiles of the equilibrium density, temperature, and ion velocity gradients, the nonlinear equations admit a stationary solution in the form of a tripolar vortex. These results are relevant to understand nonlinear structure formation in dense quantum plasmas in the presence of equilibrium ion-temperature and density gradients.

Theory of neoclassical ion temperature-gradient-driven turbulence

Science.gov (United States)

Kim, Y. B.; Diamond, P. H.; Biglari, H.; Callen, J. D.

1991-02-01

The theory of collisionless fluid ion temperature-gradient-driven turbulence is extended to the collisional banana-plateau regime. Neoclassical ion fluid evolution equations are developed and utilized to investigate linear and nonlinear dynamics of negative compressibility ηi modes (ηi≡d ln Ti/d ln ni). In the low-frequency limit (ωB2p. As a result of these modifications, growth rates are dissipative, rather than sonic, and radial mode widths are broadened [i.e., γ˜k2∥c2s(ηi -(2)/(3) )/μi, Δx˜ρs(Bt/Bp) (1+ηi)1/2, where k∥, cs, and ρs are the parallel wave number, sound velocity, and ion gyroradius, respectively]. In the limit of weak viscous damping, enhanced neoclassical polarization persists and broadens radial mode widths. Linear mixing length estimates and renormalized turbulence theory are used to determine the ion thermal diffusivity in both cases. In both cases, a strong favorable dependence of ion thermal diffusivity on Bp (and hence plasma current) is exhibited. Furthermore, the ion thermal diffusivity for long wavelength modes exhibits favorable density scaling. The possible role of neoclassical ion temperature-gradient-driven modes in edge fluctuations and transport in L-phase discharges and the L to H transition is discussed.

Crystallo-chemistry of actinide nitrides (U1-yPuy)N and effect of impurities

International Nuclear Information System (INIS)

Beauvy, M.; Coulon-Picard, E.; Pelletier, M.

2004-01-01

Investigations on actinide nitrides has been done in our Laboratories for Fast Breeder Reactors since the seventies and some properties are reported to show the interest for these fuels. Today, the actinide nitrides are reconsidered as possible fuels for the future fission reactors (GFR and LMFR selected by the international forum Generation IV). The results of new investigations on crystal structure of mixed mono-nitrides (U,Pu)N, and the effects of oxygen and carbon contaminations on this structure are presented. The cubic 'NaCl-fcc' type structure of actinide nitrides AnN with space group O5/h-Fm3m does not respect the 'Vegard law' model for the mixed nitrides (U 1-y Pu y )N. These nitrides are usually considered with strong metallic character associated with partial ionic bonding, but the ionic contribution in the An-N bonding determined in this work is very important and near 41.6% for UN and PuN. From results published on resistivity of mixed nitrides, the data on bonding must be also modified for partial covalence. This is in good agreement with the experimental lattice parameters which are not compatible with dominant metallic bonding. The numbers of bonding electrons in the nitrides (U 1-y Pu y )N are reevaluated and the low values proposed comparatively with those previously published confirm the strong ionic character with high concentration of An 3+ ions. The solubility of oxygen and carbon in actinide nitrides (U 1-y Pu y )N are discussed from measurements on volume concentration of actinide oxide phase, total oxygen and carbon contents, and lattice parameter of nitrides. The oxygen solubility limit in UN is near 1000 ppm, with a lightly higher value of 1200 ppm for the mixed nitride (U 0.8 Pu 0.2 )N. The effects of oxygen or carbon atoms in the lattice of (U 1-y Pu y )N are analysed

Preparation of uranium nitride

International Nuclear Information System (INIS)

Potter, R.A.; Tennery, V.J.

1976-01-01

A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

Design and Performance of Property Gradient Ternary Nitride Coating Based on Process Control.

Science.gov (United States)

Yan, Pei; Chen, Kaijie; Wang, Yubin; Zhou, Han; Peng, Zeyu; Jiao, Li; Wang, Xibin

2018-05-09

Surface coating is an effective approach to improve cutting tool performance, and multiple or gradient coating structures have become a common development strategy. However, composition mutations at the interfaces decrease the performance of multi-layered coatings. The key mitigation technique has been to reduce the interface effect at the boundaries. This study proposes a structure design method for property-component gradient coatings based on process control. The method produces coatings with high internal cohesion and high external hardness, which could reduce the composition and performance mutations at the interface. A ZrTiN property gradient ternary nitride coating was deposited on cemented carbide by multi-arc ion plating with separated Ti and Zr targets. The mechanical properties, friction behaviors, and cutting performances were systematically investigated, compared with a single-layer coating. The results indicated that the gradient coating had better friction and wear performance with lower wear rate and higher resistance to peeling off during sliding friction. The gradient coating had better wear and damage resistance in cutting processes, with lower machined surface roughness Ra. Gradient-structured coatings could effectively inhibit micro crack initiation and growth under alternating force and temperature load. This method could be extended to similar ternary nitride coatings.

Atomic-layer deposition of silicon nitride

CERN Document Server

Yokoyama, S; Ooba, K

1999-01-01

Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

Boron nitride encapsulated graphene infrared emitters

International Nuclear Information System (INIS)

Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R.

2016-01-01

The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

Boron nitride encapsulated graphene infrared emitters

Energy Technology Data Exchange (ETDEWEB)

Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R., E-mail: g.r.nash@exeter.ac.uk [College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF (United Kingdom)

2016-03-28

The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

III-nitride semiconductors and their modern devices

CERN Document Server

2013-01-01

This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and...

Work Function Characterization of Potassium-Intercalated, Boron Nitride Doped Graphitic Petals

Directory of Open Access Journals (Sweden)

Patrick T. McCarthy

2017-07-01

Full Text Available This paper reports on characterization techniques for electron emission from potassium-intercalated boron nitride-modified graphitic petals (GPs. Carbon-based materials offer potentially good performance in electron emission applications owing to high thermal stability and a wide range of nanostructures that increase emission current via field enhancement. Furthermore, potassium adsorption and intercalation of carbon-based nanoscale emitters decreases work functions from approximately 4.6 eV to as low as 2.0 eV. In this study, boron nitride modifications of GPs were performed. Hexagonal boron nitride is a planar structure akin to graphene and has demonstrated useful chemical and electrical properties when embedded in graphitic layers. Photoemission induced by simulated solar excitation was employed to characterize the emitter electron energy distributions, and changes in the electron emission characteristics with respect to temperature identified annealing temperature limits. After several heating cycles, a single stable emission peak with work function of 2.8 eV was present for the intercalated GP sample up to 1,000 K. Up to 600 K, the potassium-intercalated boron nitride modified sample exhibited improved retention of potassium in the form of multiple emission peaks (1.8, 2.5, and 3.3 eV resulting in a large net electron emission relative to the unmodified graphitic sample. However, upon further heating to 1,000 K, the unmodified GP sample demonstrated better stability and higher emission current than the boron nitride modified sample. Both samples deintercalated above 1,000 K.

Hardness and thermal stability of cubic silicon nitride

DEFF Research Database (Denmark)

Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

2001-01-01

The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...

Electron trapping during irradiation in reoxidized nitrided oxide

International Nuclear Information System (INIS)

Mallik, A.; Vasi, J.; Chandorkar, A.N.

1993-01-01

Isochronal detrapping experiments have been performed following irradiation under different gate biases in reoxidized nitrided oxide (RNO) MOS capacitors. These show electron trapping by the nitridation-induced electron traps at low oxide fields during irradiation. A difference in the detrapping behavior of trapped holes and electrons is observed, with trapped holes being detrapped at relatively lower temperatures compared to trapped electrons. Electron trapping shows a strong dependence on tile magnitude of the applied gate bias during irradiation but is independent of its polarity. Conventional oxide devices, as expected, do not show any electron trapping during irradiation by the native electron traps. Finally, a comparison of the isochronal detrapping behavior following irradiation and following avalanche injection of electrons has been made to estimate the extent of electron trapping. The results show that electron trapping by the nitridation-induced electron traps does not play the dominant role in improving radiation performance of RNO, though its contribution cannot be completely neglected for low oxide field irradiations

Design and Application of a High-Temperature Linear Ion Trap Reactor

Science.gov (United States)

Jiang, Li-Xue; Liu, Qing-Yu; Li, Xiao-Na; He, Sheng-Gui

2018-01-01

A high-temperature linear ion trap reactor with hexapole design was homemade to study ion-molecule reactions at variable temperatures. The highest temperature for the trapped ions is up to 773 K, which is much higher than those in available reports. The reaction between V2O6 - cluster anions and CO at different temperatures was investigated to evaluate the performance of this reactor. The apparent activation energy was determined to be 0.10 ± 0.02 eV, which is consistent with the barrier of 0.12 eV calculated by density functional theory. This indicates that the current experimental apparatus is prospective to study ion-molecule reactions at variable temperatures, and more kinetic details can be obtained to have a better understanding of chemical reactions that have overall barriers. [Figure not available: see fulltext.

Effects of positron density and temperature on large amplitude ion-acoustic waves in an electron-positron-ion plasma

International Nuclear Information System (INIS)

Nejoh, Y.N.

1997-01-01

The nonlinear wave structures of large amplitude ion-acoustic waves are studied in a plasma with positrons. We have presented the region of existence of the ion-acoustic waves by analysing the structure of the pseudopotential. The region of existence sensitively depends on the positron to electron density ratio, the ion to electron mass ratio and the positron to electron temperature ratio. It is shown that the maximum Mach number increases as the positron temperature increases and the region of existence of the ion-acoustic waves spreads as the positron temperature increases. 12 refs., 6 figs

High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

Science.gov (United States)

Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

Study of thin insulating films using secondary ion emission

International Nuclear Information System (INIS)

Hilleret, Noel

1973-01-01

Secondary ion emission from insulating films was investigated using a CASTAING-SLODZIAN ion analyzer. Various different aspects of the problem were studied: charge flow across a silica film; the mobilization of sodium during ion bombardment; consequences of the introduction of oxygen on the emission of secondary ions from some solids; determination of the various characteristics of secondary ion emission from silica, silicon nitride and silicon. An example of measurements made using this type of operation is presented: profiles (concentration as a function of depth) of boron introduced by diffusion or implantation in thin films of silica on silicon or silicon nitride. Such measurements have applications in microelectronics. The same method of operation was extended to other types of insulating film, and in particular, to the metallurgical study of passivation films formed on the surface of stainless steels. (author) [fr

Extreme conditions synthesis, processing and characterization of metal-nitrides and alloys of mechanical and optoelectronic importance

International Nuclear Information System (INIS)

Serghiou, G; McGaff, A J; Russell, N; Morniroli, J P; Frost, D J; Odling, N; Boehler, R; Troadec, D; Lathe, C

2010-01-01

High density nitrides and group IV alloys are of growing importance for both ceramic and optoelectronic applications. We present here new data and processes in our ongoing preparation of alkaline earth and transition metal nitrides as well as group IV alloys, here, up to 25 GPa and 2300 K. We employ large volume and laser-heated diamond anvil cell techniques for synthesis, processing tools including focused ion beam, and synchrotron X-ray diffraction, transmission electron microscopy and scanning electron microscopy for characterization.

Ion currents to cylindrical Langmuir probes for finite ion temperature values: Theory

International Nuclear Information System (INIS)

Ballesteros, J.; Palop, J.I.F.; Colomer, V.; Hernandez, M.A.

1995-01-01

As it is known, the experimental ion currents to a cylindrical Langmuir probe fit quite well to the radial motion theory, developed by Allen, Boyd and Reynolds (ABR Model) and generalized by Chen for the cylindrical probe case. In this paper, we are going to develop a generalization of the ABR theory, taking into account the influence of a finite ion temperature value

Inverse magnetostrictive characteristics of Fe-Co composite materials using gas-nitriding process

Science.gov (United States)

Nakajima, Kenya; Yang, Zhenjun; Narita, Fumio

2018-03-01

The inverse magnetostrictive response, known as the Villari effect, of magnetostrictive materials is a change in magnetization due to an applied stress. It is commonly used for sensor applications. This work deals with the inverse magnetostrictive characteristics of Fe-Co bimetal plates that were subjected gas-nitriding process. Gas-nitriding was performed on bimetal plates for 30 min at 853 K as a surface heat treatment process. The specimens were cooled to room temperature after completing the nitriding treatment. Three-point bending tests were performed on the plates under a magnetic field. The changes on the magnetic induction of the plates due to the applied load are discussed. The effect of the nitriding treatment on the inverse magnetostrictive characteristics, magnetostrictive susceptibility, and magnetic hysteresis loop was examined. Our work represents an important step forward in the development of magnetostrictive sensor materials.

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Directory of Open Access Journals (Sweden)

Isabelle Jauberteau

2015-10-01

Full Text Available Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

Integrated heat transport simulation of high ion temperature plasma of LHD

International Nuclear Information System (INIS)

Murakami, S.; Yamaguchi, H.; Sakai, A.

2014-10-01

A first dynamical simulation of high ion temperature plasma with carbon pellet injection of LHD is performed by the integrated simulation GNET-TD + TASK3D. NBI heating deposition of time evolving plasma is evaluated by the 5D drift kinetic equation solver, GNET-TD and the heat transport of multi-ion species plasma (e, H, He, C) is studied by the integrated transport simulation code, TASK3D. Achievement of high ion temperature plasma is attributed to the 1) increase of heating power per ion due to the temporal increase of effective charge, 2) reduction of effective neoclassical transport with impurities, 3) reduction of turbulence transport. The reduction of turbulence transport is most significant contribution to achieve the high ion temperature and the reduction of the turbulent transport from the L-mode plasma (normal hydrogen plasma) is evaluated to be a factor about five by using integrated heat transport simulation code. Applying the Z effective dependent turbulent reduction model we obtain a similar time behavior of ion temperature after the C pellet injection with the experimental results. (author)

Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

DEFF Research Database (Denmark)

Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

2017-01-01

Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energy...

Comparison of ferritic and austenitic plasma nitriding and nitrocarburizing behavior of AISI 4140 low alloy steel

International Nuclear Information System (INIS)

Fattah, M.; Mahboubi, F.

2010-01-01

This paper compares the ferritic and austenitic plasma nitriding and nitrocarburizing behavior of AISI 4140 low alloy steel carried out to improve the surface corrosion resistance. The gas composition for plasma nitriding was 85% N 2 -15% H 2 and that for plasma nitrocarburizing was 85% N 2 -12% H 2 -3% CO 2 . Both treatments were performed for 5 h, for different process temperatures of 570 and 620 o C for ferritic and austenitic plasma treatment, respectively. Optical microscopy, X-ray diffraction and potentiodynamic polarization technique in 3.5% NaCl solution, were used to study the treated surfaces. The results of X-ray analysis revealed that with increasing the treatment temperature from 570 to 620 o C for both treatments, the amount of ε phase decreased and γ' phase increased. Nitrocarburizing treatment resulted in formation of a more amount of ε phase with respect to nitriding treatment. However, the highest amount of ε phase was observed in the ferritic nitrocarburized sample at 570 o C. The sample nitrided at 620 o C exhibited the thickest layer. The potentiodynamic polarization results revealed that after plasma nitriding and nitrocarburizing at 570 o C, corrosion potential increased with respect to the untreated sample due to the noble nitride and carbonitride phases formed on the surface. After increasing the treatment temperature from 570 to 620 o C, corrosion potential decreased due to the less ε phase development in the compound layer and more porous compound layer formed at 620 o C with respect to the treated samples at 570 o C.

Solid state alloying by plasma nitriding and diffusion annealing treatment for austenitic stainless steel

International Nuclear Information System (INIS)

Pinedo, C.E.; Vatavuk, J.; Oliveira, S.D. de; Tschiptschin, A.P.

1999-01-01

Nitrogen has been added to stainless steels to improve mechanical strength and corrosion resistance. High nitrogen steel production is limited by high gas pressure requirements and low nitrogen solubility in the melt. One way to overcome this limitation is the addition of nitrogen in solid state because of its higher solubility in austenite. However, gas and salt bath nitriding have been done at temperatures around 550 C, where nitrogen solubility in the steel is still very low. High temperature nitriding has been, thus proposed to increase nitrogen contents in the steel but the presence of oxide layers on top of the steel is a barrier to nitrogen intake. In this paper a modified plasma nitriding process is proposed. The first step of this process is a hydrogen plasma sputtering for oxide removal, exposing active steel surface improving nitrogen pickup. This is followed by a nitriding step where high nitrogen contents are introduced in the outermost layer of the steel. Diffusion annealing is then performed in order to allow nitrogen diffusion into the core. AISI 316 austenitic stainless steel was plasma nitrided and diffusion annealed at 1423K, for 6 hours, with 0.2 MPa nitrogen pressure. The nitrided steel presented ∝60 μm outermost compact layer of (Fe,Cr) 3 N and (Fe,Cr) 4 N with 11 wt.% N measured by surface depth profiling chemical analysis - GDS system. During the annealing treatment the nitride layer was dissolved and nitrogen diffused to the core of the sample leaving more even nitrogen distribution into the steel. Using this technique one-millimetre thick sample were obtained having high nitrogen content and uniform distribution through the thickness. (orig.)

AlN powder synthesis via nitriding reaction of aluminum sub-chloride

Energy Technology Data Exchange (ETDEWEB)

Ohashi, T.; Nishida, T.; Sugiura, M. (Waseda Univ., Tokyo (Japan). Graduate School); Fuwa, A. (Waseda Univ., Tokyo (Japan))

1993-06-01

In order to obtain the pertinent properties of aluminium nitride in its sintered form, it is desirable to have powders of finer sizes with narrower size distribution and higher purity, thereby making the sintering processing easier and the final body denser. Instead of using sublimated aluminum tri-chloride vapor (AlCl3) as an aluminum source in the vapor phase nitriding reaction, the mixed aluminum chloride vapor consisted of aluminum tri-chloride, bi-chloride and mono-chloride are used in the reaction with ammonia at temperatures of 1000 and 1200K. The mixed chloride vapors are produced by reacting chlorine with molten aluminum at 1000 or 1200K under atmospheric pressure. The reaction of this mixed chloride vapor with ammonia is then experimentally investigated to study the aluminum nitride powder morphology. The aluminum nitride powders synthesized under various ammonia concentrations are characterized for size distribution, mean particle size and particle morphology. 24 refs., 8 figs., 2 tabs.