Quantitative analysis of tellurium in simple substance sulfur

International Nuclear Information System (INIS)

Arikawa, Yoshiko

1976-01-01

The MIBK extraction-bismuthiol-2 absorptiometric method for the quantitative analysis of tellurium was studied. The method and its limitation were compared with the atomic absorption method. The period of time required to boil the solution in order to decompose excess hydrogen peroxide and to reduce tellurium from 6 valance to 4 valance was examined. As a result of experiment, the decomposition was fast in the alkaline solution. It takes 30 minutes with alkaline solution and 40 minutes with acid solution to indicate constant absorption. A method of analyzing the sample containing tellurium less than 5 ppm was studied. The experiment revealed that the sample containing a very small amount of tellurium can be analyzed when concentration by extraction is carried out for the sample solutions which are divided into one gram each because it is difficult to treat several grams of the sample at one time. This method also is suitable for the quantitative analysis of selenium. This method showed good addition effect and reproducibility within the relative error of 5%. The comparison between the calibration curve of the standard solution of tellurium 4 subjected to the reaction with bismuthiol-2 and the calibration curve obtained from the extraction of tellurium 4 with MIBK indicated that the extraction is perfect. The result by bismuthiol-2 method and that by atom absorption method coincided quite well on the same sample. (Iwakiri, K.)

Facile electrochemical synthesis of tellurium nanorods and their photoconductive properties

Energy Technology Data Exchange (ETDEWEB)

Li, H.H. [Center for Photon Manufacturing Science and Technology, School of Materials Science and Engineering, Jiangsu University, Zhenjiang - 212013 (China); Zhang, P. [Dongguan University of Technology, Dongguan-523808 (China); School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou - 510275 (China); Liang, C.L. [Instrumental Analysis and Research Center, SunYat-sen University, Guangzhou - 510275 (China); Yang, J. [School of Materials Science and Engineering, Jiangsu University, Zhenjiang - 212013 (China); Zhou, M. [Center for Photon Manufacturing Science and Technology, School of Materials Science and Engineering, Jiangsu University, Zhenjiang - 212013 (China); The State Key Laboratory of Tribology, Tsinghua University, Beijing - 10084 (China); Lu, X.H. [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou - 510275 (China); Hope, G.A. [School of Biomolecular and Physical Sciences, Griffith University, Nathan - Qld 4111 (Australia)

2012-10-15

Tellurium nanorods have been successfully fabricated by template and surfactant-free electrochemical technique from an aqueous solution at room temperature. The as-prepared tellurium nanorods were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectrometry, UV-vis spectroscopy and photoluminescence spectroscopy. Films based on tellurium nanorods were constructed to study the photoresponse and I-V curves. These photoresponse measurements demonstrate that tellurium nanorods exhibited enhanced conductivity under illumination compared to in the dark measurement. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Analysis of tellurium thin films electrodeposition from acidic citric bath

Energy Technology Data Exchange (ETDEWEB)

Kowalik, Remigiusz; Kutyła, Dawid [AGH University of Science and Technology, Faculty of Non-Ferrous Metals, al. A. Mickiewicza 30, 30-059 Krakow (Poland); Mech, Krzysztof [AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, al. A. Mickiewicza 30, Krakow (Poland); Żabiński, Piotr, E-mail: rkowalik@agh.edu.pl [AGH University of Science and Technology, Faculty of Non-Ferrous Metals, al. A. Mickiewicza 30, 30-059 Krakow (Poland)

2016-12-01

This work presents the description of the electrochemical process of formation thin tellurium layers from citrate acidic solution. The suggested methodology consists in the preparation of stable acidic baths with high content of tellurium, and with the addition of citrate acid. In order to analyse the mechanism of the process of tellurium deposition, the electroanalytical tests were conducted. The tests of cyclic voltammetry and hydrodynamic ones were performed with the use of polycrystalline gold disk electrode. The range of potentials in which deposition of tellurium in direct four-electron process is possible was determined as well as the reduction of deposited Te° to Te{sup 2−} and its re-deposition as a result of the comproportionation reaction. On the basis of the obtained results, the deposition of tellurium was conducted by the potentiostatic method. The influence of a deposition potential and a concentration of TeO{sub 2} in the solution on the rate of tellurium coatings deposition was examined. The presence of tellurium was confirmed by X-ray spectrofluorometry and electron probe microanalysis. In order to determine the phase composition and the morphology, the obtained coatings were analysed with the use of x-ray diffraction and scanning electron microscopy.

Properties of low-alloy steel with tellurium

International Nuclear Information System (INIS)

Popova, L.V.; Lebedev, D.V.; Litvinenko, D.A.; Nasibov, A.G.

1983-01-01

The results of investigations into 09G2 and 09G2F steels alloyed with tellurium after controlled rolling are presented. 0.002-0.011% tellurium additions did not change strength and plastic properties of the steels after controlled rolling. Tellurium additions results in 40-50% increase of the steel impact strength on samples With circular and sharp cuts in brittle-viscous region. 0.002-0.003% of tellurium is considered to be the optimum content from the view point of increa=. sing steel strength. Increase of impact strength takes place at the expense of growth of both work function of crack formation and work function of crack propagation but in different temperature ranges: at the expense of firstone at 80-40 deg C, at the expense of second one at 20-40 deg C. 0.002-0.011% teilurium additions mainly at the expense of sulphide globularization bring about decrease of anisotropy of steet properties by impact strength reducing anisotropy factor from 2 to 1.5

Analysis of tellurium-silicon alloys. Part 1. Determination of tellurium by the reduction from perchloric acid solution

International Nuclear Information System (INIS)

Teperek, J.

1977-01-01

When 100-150 mg of tellurium is dissolved in the solution containing 20 cm 3 72 wt.% of perchloric acid, the reduction of tellurium to elementary form is possible only after adding 60-100 milimoles of HCl. The reduction is performed by adding 1 cm 3 of saturated sodium pyrosulphite solution (Na 2 S 2 O 5 ) and 10 cm 3 of 10 wt.% hydrazine hydrochloride solution (N 2 H 4 .2HCl) to 80-90 cm 3 of cold solution of Te in HClO 4 -HCl mixture. The reduction is completed after 3-5 min. of boiling. When 150-200 mg sample of Te-Si alloy is dissolved in 20 cm 3 of hot 72% per chloric acid, the separation of components is reached. Tellurium can be determinated in filtrate by proposed procedure with high accuracy and precision. (author)

Polarographic determination of selenium and tellurium in silver-gold alloys

International Nuclear Information System (INIS)

Gornostaeva, T.D.; Shmargun, S.V.

1986-01-01

The determination of selenium and tellurium is of importance in monitoring the composition of silver-gold alloys (SGA) since these elements are harmful impurities in the pure metals. Tellurium is determined in silver alloys by atomic absorption and atomic emmission methods; selenium determination is made by atomic absorption methods. This paper examines the polarographic determination of silver and tellurium in SGA containing platinum metals and copper. Copper and the bulk of the platinum and palladium were removed by precipitating selenium and tellurium with potassium hypophosphite in the elementary state from 6 M HC1. The results of an analysis of samples of SGA according to the proposed method were compared with the results obtained by the atomic absorption method. the relative deviation in the determination of 0.02-1.0% by weight selenium and tellurium does not exceed 0.12 (n = 5)

Biosynthesis and recovery of rod-shaped tellurium nanoparticles and their bactericidal activities

Energy Technology Data Exchange (ETDEWEB)

Zare, Bijan; Faramarzi, Mohammad Ali; Sepehrizadeh, Zargham [Department of Pharmaceutical Biotechnology and Biotechnology Research Center, Faculty of Pharmacy, Tehran University of Medical Sciences, P.O. Box 14155-6451 Tehran (Iran, Islamic Republic of); Shakibaie, Mojtaba [Department of Pharmacognosy and Biotechnology, School of Pharmacy, Pharmaceutics Research Center, Kerman University of Medical Sciences, P.O. Box 76175-493 Kerman (Iran, Islamic Republic of); Rezaie, Sassan [Department of Medical Biotechnology, School of Advanced Medical Technologies, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of); Shahverdi, Ahmad Reza, E-mail: shahverd@sina.tums.ac.ir [Department of Pharmaceutical Biotechnology and Biotechnology Research Center, Faculty of Pharmacy, Tehran University of Medical Sciences, P.O. Box 14155-6451 Tehran (Iran, Islamic Republic of)

2012-11-15

Highlights: ► Biosynthesis of rod shape tellurium nanoparticles with a hexagonal crystal structure. ► Extraction procedure for isolation of tellurium nanoparticles from Bacillus sp. BZ. ► Extracted tellurium nanoparticles have good bactericidal activity against some bacteria. -- Abstract: In this study, a tellurium-transforming Bacillus sp. BZ was isolated from the Caspian Sea in northern Iran. The isolate was identified by various tests and 16S rDNA analysis, and then used to prepare elemental tellurium nanoparticles. The isolate was subsequently used for the intracellular biosynthesis of elemental tellurium nanoparticles. The biogenic nanoparticles were released by liquid nitrogen and purified by an n-octyl alcohol water extraction system. The shape, size, and composition of the extracted nanoparticles were characterized. The transmission electron micrograph showed rod-shaped nanoparticles with dimensions of about 20 nm × 180 nm. The energy dispersive X-ray and X-ray diffraction spectra respectively demonstrated that the extracted nanoparticles consisted of only tellurium and have a hexagonal crystal structure. This is the first study to demonstrate a biological method for synthesizing rod-shaped elemental tellurium by a Bacillus sp., its extraction and its antibacterial activity against different clinical isolates.

Biosynthesis and recovery of rod-shaped tellurium nanoparticles and their bactericidal activities

International Nuclear Information System (INIS)

Zare, Bijan; Faramarzi, Mohammad Ali; Sepehrizadeh, Zargham; Shakibaie, Mojtaba; Rezaie, Sassan; Shahverdi, Ahmad Reza

2012-01-01

Highlights: ► Biosynthesis of rod shape tellurium nanoparticles with a hexagonal crystal structure. ► Extraction procedure for isolation of tellurium nanoparticles from Bacillus sp. BZ. ► Extracted tellurium nanoparticles have good bactericidal activity against some bacteria. -- Abstract: In this study, a tellurium-transforming Bacillus sp. BZ was isolated from the Caspian Sea in northern Iran. The isolate was identified by various tests and 16S rDNA analysis, and then used to prepare elemental tellurium nanoparticles. The isolate was subsequently used for the intracellular biosynthesis of elemental tellurium nanoparticles. The biogenic nanoparticles were released by liquid nitrogen and purified by an n-octyl alcohol water extraction system. The shape, size, and composition of the extracted nanoparticles were characterized. The transmission electron micrograph showed rod-shaped nanoparticles with dimensions of about 20 nm × 180 nm. The energy dispersive X-ray and X-ray diffraction spectra respectively demonstrated that the extracted nanoparticles consisted of only tellurium and have a hexagonal crystal structure. This is the first study to demonstrate a biological method for synthesizing rod-shaped elemental tellurium by a Bacillus sp., its extraction and its antibacterial activity against different clinical isolates.

Structure and activity of tellurium-cerium oxide acrylonitrile catalysts

International Nuclear Information System (INIS)

Bart, J.C.J.; Giordano, N.

1982-01-01

Ammoxidation of propylene to acrylonitrile (ACN) was investigated over various silica-supported (Te,Ce)O catalysts at 360 and 440 0 C. The binary oxide system used consists of a single nonstoichiometric fluorite-type phase α-(Ce,Te)O 2 up to about 80 mole% TeO 2 and a tellurium-saturated solid solution β-(Ce,Te)O 2 at higher tellurium concentrations. The ACN yield varies almost linearly with the tellurium content of (Ce,Te)O 2 . The β-(Ce,Te)O 2 phase is the most active component of the system (propylene conversion and ACN selectivity at 440 C of 76.7 and 74%, respectively) and is slightly more selective to ACN than α-Te0 2 . Tellurium reduces the overoxidation properties of cerium and selective oxidation occurs through Te(IV)-bonded oxygen

A recycling model of the biokinetics of systemic tellurium.

Science.gov (United States)

Giussani, Augusto

2014-11-01

To develop a compartmental model of the systemic biokinetics of tellurium required for calculating the internal dose and interpreting bioassay measurements after incorporation of radioactive tellurium. The compartmental model for tellurium was developed with the software SAAM II v. 2.0 (©The Epsilon Group, Charlottesville, Virginia, USA). Model parameters were determined on the basis of published retention and excretion data in humans and animals. The model consists of two blood compartments, one compartment each for liver, kidneys, thyroid, four compartments for bone tissues and a generic compartment for the soft tissues. The model predicts a rapid urinary excretion of systemic tellurium: 45% in the first 24 h and 84% after 50 d. Faecal excretion amounts to 0.4% after 3 d and 9% after 50 d. Whole body retention is 55% after one day, and 2.8% after 100 d. These values as well as the retained fractions in the single organs are reasonably consistent with the available human and animal data (studies with swine and guinea pigs). The proposed model gives a realistic description of the available biokinetic data for tellurium and will be adopted by the International Commission on Radiological Protection for applications in internal dosimetry.

Atomic absorption determination of ultratrace tellurium in rocks utilizing high sensitivity sampling systems

International Nuclear Information System (INIS)

Beaty, R.D.

1973-01-01

The sampling boat and the graphite furnace were shown to possess the required sensitivity to detect tellurium at ultratrace levels, in a variety of sample types, by atomic absorption. In the sampling boat approach, tellurium in sample solutions is chemically separated and concentrated by extraction into methyl isobutyl ketone before measurement. For samples exhibiting extraction interferences or excessively high background absorption, a preliminary separation of tellurium by coprecipitation with selenium is described. Using this technique, tellurium can be quantitatively detected down to 5 nanograms and linear response is observed to 100 nanograms. Relative standard deviations of better than 7 percent are achieved for 50 nanograms of tellurium. For samples that have a tellurium content below the detection limits of the sampling boat, the graphite furnace is used for atomization. By this method, as little as 0.07 nanograms of tellurium can be detected, and a precision of 1 percent relative standard deviation is achievable at the 5 nanogram level. A routinely applicable procedure was developed for determining tellurium in rocks, using the graphite furnace, after a hydrofluoric acid decomposition of the sample. Using this procedure, tellurium data were obtained on 20 different rocks, and the significance of this new information is discussed. (Diss. Abstr. Int., B)

METHODS OF SYNTHESIS EIGHT-TELLURIUM-CONTAINING HETEROCYCLES WITH MORE HETEROATOMS

Directory of Open Access Journals (Sweden)

G. M. Abakarov

2013-01-01

Full Text Available In this article systematized and summarized data on the synthesis of neweight-embered tellurium-containing heterocycles and new preparative methods described above produce heterocyclic tellurium.

Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method

Science.gov (United States)

Bolotnikov, Aleskey E [South Setauket, NY; James, Ralph B [Ridge, NY

2010-07-20

The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.

Window structure for passivating solar cells based on gallium arsenide

Science.gov (United States)

Barnett, Allen M. (Inventor)

1985-01-01

Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

Selenium and tellurium reagents in organic synthesis

International Nuclear Information System (INIS)

Comasseto, J.V.

1984-01-01

A review of the contribution of the University of Sao Paulo (SP, Brazil) to the organic synthesis of selenium and tellurium reagents is made. Major reactions amoung selenium compounds and insaturated substrates, phosphorus, ester enolates as well as the use of phase transference catalysed reactions to produce arylselenolate are described. For tellurium, interactions of its compounds with organic substrates and reactive intermediates (e.g. benzino diazomethane) are reported. (C.L.B.) [pt

Rapid radiochemical ion-exchange separation of iodine from tellurium: a novel radioiodine-132 generator

Energy Technology Data Exchange (ETDEWEB)

Abrao, A

1975-01-01

Tellurium ions form a soluble cationic complex with thiourea in acid medium. The cationic tellurium-thiourea species is strongly absorbed on a cationic ion exchanger. The retention of tellurium on the resin enables many interesting separation schemes for tellurium from various ions. With special interest, the separation of iodine from tellurium was studied. An efficient and convenient iodine-132 generator is described, in which the radio-iodine is eluted with water or 9 g/1 NaCl, when desired.

Electrophilic addition of selenium and tellurium halides to methyldiethynylsilane

International Nuclear Information System (INIS)

Amosova, S.V.; Penzik, M.V.; Martynov, A.V.; Zhilitskaya, L.V.; Voronkov, M.G.

2009-01-01

Reaction of TeCl 4 with methyldiethynylsilane (MDES) proceeds with the predominant formation of E-isomer 1,1,3,6-tetrachlorine-1-methyl-1-(methyldiethynylsiloxy)-1,4-tellurium(IV) silafulvic due to the interaction of intermediate E-isomer 4-methyl-1,1,3,6-tetrachlorine-1,4-tellurium(IV)silafulvic with MDES. TeCl 4 Reacts with MDES without reduction of Te(IV) in Te(II). Tetracoordination of tellurium atom in heterocycle was established by NMR 125 Te. Mass spectrum of heterocycle shows the presence of fragmentary ions [M-Cl 2 ] + . According elemental analysis Te:Cl=1:4 ratio proves composition of heterocycle

Purification and in vitro antioxidant activities of tellurium-containing phycobiliproteins from tellurium-enriched Spirulina platensis

Directory of Open Access Journals (Sweden)

Yang F

2014-10-01

Full Text Available Fang Yang,1 Ka-Hing Wong,2 Yufeng Yang,3 Xiaoling Li,1 Jie Jiang,1 Wenjie Zheng,1 Hualian Wu,1 Tianfeng Chen1 1Department of Chemistry, Jinan University, Guangzhou, People’s Republic of China; 2Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong, People’s Republic of China; 3Institute of Hydrobiology, College of Life Science and Technology, Jinan University, Guangzhou, People’s Republic of China Abstract: Tellurium-containing phycocyanin (Te-PC and allophycocyanin (Te-APC, two organic tellurium (Te species, were purified from tellurium-enriched Spirulina platensis by a fast protein liquid chromatographic method. It was found that the incorporation of Te into the peptides enhanced the antioxidant activities of both phycobiliproteins. With fractionation by ammonium sulfate precipitation and hydroxylapatite chromatography, Te-PC and Te-APC could be effectively separated with high purity, and Te concentrations were 611.1 and 625.3 µg g-1 protein in Te-PC and Te-APC, respectively. The subunits in the proteins were identified by using MALDI-TOF-TOF mass spectrometry. Te incorporation enhanced the antioxidant activities of both phycobiliproteins, as examined by 2,2'-azino-bis(3-ethylbenzothiazoline-6-sulphonic acid assay. Moreover, Te-PC and Te-APC showed dose-dependent protection on erythrocytes against the water-soluble free radical initiator 2,2'-azo(2-asmidinopropanedihydrochloride-induced hemolysis. In the hepatoprotective model, apoptotic cell death and nuclear condensation induced by tert-butyl hydroperoxide in HepG2 cells was significantly attenuated by Te-PC and Te-APC. Taken together, these results suggest that Te-PC and Te-APC are promising Te-containing proteins with application potential for treatment of diseases related to oxidative stress. Keywords: tellurium, phycocyanin, allophycocyanin, purification, antioxidant activity

Purification and in vitro antioxidant activities of tellurium-containing phycobiliproteins from tellurium-enriched Spirulina platensis.

Science.gov (United States)

Yang, Fang; Wong, Ka-Hing; Yang, Yufeng; Li, Xiaoling; Jiang, Jie; Zheng, Wenjie; Wu, Hualian; Chen, Tianfeng

2014-01-01

Tellurium-containing phycocyanin (Te-PC) and allophycocyanin (Te-APC), two organic tellurium (Te) species, were purified from tellurium-enriched Spirulina platensis by a fast protein liquid chromatographic method. It was found that the incorporation of Te into the peptides enhanced the antioxidant activities of both phycobiliproteins. With fractionation by ammonium sulfate precipitation and hydroxylapatite chromatography, Te-PC and Te-APC could be effectively separated with high purity, and Te concentrations were 611.1 and 625.3 μg g(-1) protein in Te-PC and Te-APC, respectively. The subunits in the proteins were identified by using MALDI-TOF-TOF mass spectrometry. Te incorporation enhanced the antioxidant activities of both phycobiliproteins, as examined by 2,2'-azino-bis(3-ethylbenzothiazoline-6-sulphonic acid assay. Moreover, Te-PC and Te-APC showed dose-dependent protection on erythrocytes against the water-soluble free radical initiator 2,2'-azo(2-asmidinopropane)dihydrochloride-induced hemolysis. In the hepatoprotective model, apoptotic cell death and nuclear condensation induced by tert-butyl hydroperoxide in HepG2 cells was significantly attenuated by Te-PC and Te-APC. Taken together, these results suggest that Te-PC and Te-APC are promising Te-containing proteins with application potential for treatment of diseases related to oxidative stress.

Flame and flameless atomic-absorption determination of tellurium in geological materials

Science.gov (United States)

Chao, T.T.; Sanzolone, R.F.; Hubert, A.E.

1978-01-01

The sample is digested with a solution of hydrobromic acid and bromine and the excess of bromine is expelled. After dilution of the solution to approximately 3 M in hydrobromic acid, ascorbic acid is added to reduce iron(III) before extraction of tellurium into methyl isobutyl ketone (MIBK). An oxidizing air-acetylene flame is used to determine tellurium in the 0.1-20 ppm range. For samples containing 4-200 ppb of tellurium, a carbon-rod atomizer is used after the MIBK extract has been washed with 0.5 M hydrobromic acid to remove the residual iron. The flame procedure is useful for rapid preliminary monitoring, and the flameless procedure can determine tellurium at very low concentrations. ?? 1978.

A rapid radiochemical ion-exchange separation of iodine from tellurium: a novel radioiodine-132 generator

International Nuclear Information System (INIS)

Abrao, A.

1975-01-01

Tellurium ions form a soluble cationic complex with thiourea in acid medium. The cationic tellurium-thiourea species is strongly absorbed on a cationic ion exchanger. The retention of tellurium on the resin enables many interesting separation schemes for tellurium from various ions. With special interest, the separation of iodine from tellurium was studied. An efficient and convenient iodine-132 generator is described, in which the radio-iodine is eluted with water or 9 g/1 NaCL, when desired

Study of distribution coefficients of admixtures in tellurium

International Nuclear Information System (INIS)

Kuchar, L.; Drapala, J.; Kuchar, L. jr.

1986-01-01

Limit areas of tellurium-admixture binary systems were studied and the values determined of steady-state distribution coefficients of admixtures. A second order polynomial was used to express equations of solidus and liquidus curves for Te-Se, Te-S, Te-Hg systems; the curves are graphically represented. The most effective method for preparing high-purity tellurium is zonal melting with material removal. (M.D.). 4 figs., 4 tabs., 16 refs

Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

Energy Technology Data Exchange (ETDEWEB)

Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

1990-12-01

Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

Effects of tellurium concentration on the structure of melt-grown ZnSe crystals

International Nuclear Information System (INIS)

Atroshchenko, Lyubov V.; Galkin, Sergey N.; Rybalka, Irina A.; Voronkin, Evgeniy F.; Lalayants, Alexandr I.; Ryzhikov, Vladimir D.; Fedorov, Alexandr G.

2005-01-01

It has been shown that isovalent doping by tellurium positively affects the structural perfection of ZnSe crystals related to the completeness of the wurtzite-sphalerite phase transition. The optimum concentration range of tellurium in ZnSe crystals is 0.3-0.6 mass %. X-ray diffraction studies have shown that in ZnSe 1-x Te x crystals at tellurium concentrations below 0.3 mass % twinning and packing defects occur, while tellurium concentrations above 0.6 mass % lead to formation of tetragonal crystal lattice

Thermal neutron capture cross sections of tellurium isotopes

International Nuclear Information System (INIS)

Tomandl, I.; Honzatko, J.; Egidy, T. von; Wirth, H.-F.; Belgya, T.; Lakatos, M.; Szentmiklosi, L.; Revay, Zs.; Molnar, G.L.; Firestone, R.B.; Bondarenko, V.

2003-01-01

New values for thermal neutron capture cross sections of the tellurium isotopes 122 Te, 124 Te, 125 Te, 126 Te, 128 Te, and 130 Te are reported. These values are based on a combination of newly determined partial γ-ray cross sections obtained from experiments on targets contained natural Te and γ intensities per capture of individual Te isotopes. Isomeric ratios for the thermal neutron capture on the even tellurium isotopes are also given

Thermal neutron capture cross sections of tellurium isotopes

International Nuclear Information System (INIS)

Tomandl, I.; Honzatko, J.; Egidy, T. von; Wirth, H.-F.; Belgya, T.; Lakatos, M.; Szentmiklosi, L.; Revay, Zs.; Molnar, G.L.; Firestone, R.B.; Bondarenko, V.

2004-01-01

New values for thermal neutron capture cross sections of the tellurium isotopes 122Te, 124Te, 125Te, 126Te, 128Te, and 130Te are reported. These values are based on a combination of newly determined partial g-ray cross sections obtained from experiments on targets contained natural Te and gamma intensities per capture of individual Te isotopes. Isomeric ratios for the thermal neutron capture on the even tellurium isotopes are also given

Thermal neutron capture cross sections of tellurium isotopes

Energy Technology Data Exchange (ETDEWEB)

Tomandl, I.; Honzatko, J.; von Egidy, T.; Wirth, H.-F.; Belgya, T.; Lakatos, M.; Szentmiklosi, L.; Revay, Zs.; Molnar, G.L.; Firestone, R.B.; Bondarenko, V.

2004-03-01

New values for thermal neutron capture cross sections of the tellurium isotopes 122Te, 124Te, 125Te, 126Te, 128Te, and 130Te are reported. These values are based on a combination of newly determined partial g-ray cross sections obtained from experiments on targets contained natural Te and gamma intensities per capture of individual Te isotopes. Isomeric ratios for the thermal neutron capture on the even tellurium isotopes are also given.

Van der Waals epitaxy and photoresponse of hexagonal tellurium nanoplates on flexible mica sheets.

Science.gov (United States)

Wang, Qisheng; Safdar, Muhammad; Xu, Kai; Mirza, Misbah; Wang, Zhenxing; He, Jun

2014-07-22

Van der Waals epitaxy (vdWE) is of great interest due to its extensive applications in the synthesis of ultrathin two-dimensional (2D) layered materials. However, vdWE of nonlayered functional materials is still not very well documented. Here, although tellurium has a strong tendency to grow into one-dimensional nanoarchitecture due to its chain-like structure, we successfully realize 2D hexagonal tellurium nanoplates on flexible mica sheets via vdWE. Chemically inert mica surface is found to be crucial for the lateral growth of hexagonal tellurium nanoplates since it (1) facilitates the migration of tellurium adatoms along mica surface and (2) allows a large lattice mismatch. Furthermore, 2D tellurium hexagonal nanoplates-based photodetectors are in situ fabricated on flexible mica sheets. Efficient photoresponse is obtained even after bending the device for 100 times, indicating 2D tellurium hexagonal nanoplates-based photodetectors on mica sheets have a great application potential in flexible and wearable optoelectronic devices. We believe the fundamental understanding of vdWE effect on the growth of 2D tellurium hexagonal nanoplate can pave the way toward leveraging vdWE as a useful channel to realize the 2D geometry of other nonlayered materials.

Investigation of γ-irradiation influence on the DLTS spectra in silicon diluted by tellurium

International Nuclear Information System (INIS)

Sultanov, N.A.; Tadzhibaev, M.; Mirzabadalov, Zh

1997-01-01

The influence of gamma-radiation on deep level transient spectroscopy(DLTS) spectra for silicon crystals doped with tellurium was studied. The DLTS spectra have shown that tellurium in silicon formed two deep levels with fixed ionization energy. It was shown that the presence of tellurium prevents the formation of radiation defects

Status of tellurium--hastelloy N studies in molten fluoride salts

International Nuclear Information System (INIS)

Keiser, J.R.

1977-10-01

Tellurium, which is a fission product in nuclear reactor fuels, can embrittle the surface grain boundaries of nickel-base structural materials. This report summarizes results of an experimental investigation conducted to understand the mechanism and to develop a means of controlling this embrittlement in the alloy Hastelloy N. The addition of a chromium telluride to salt can be used to provide small partial pressures of tellurium simulating a reactor environment where tellurium appears as a fission product. The intergranular embrittlement produced in Hastelloy N when exposed to this chromium telluride-salt mixture can be reduced by adding niobium to the Hastelloy N or by controlling the oxidation potential of the salt in the reducing range

Comparison between selenium and tellurium clusters

International Nuclear Information System (INIS)

Benamar, A.; Rayane, D.; Tribollet, B.; Broyer, M.; Melinon, P.

1991-01-01

Selenium and tellurium clusters are produced by the inert gas condensation technique. The mass spectra of both species are completely different and reveal different properties. In selenium, a periodicity of 6-7 is observed and may be interpreted by the binding energy between small cyclic molecules. Moreover, it was very difficult to obtained large clusters probably because the binding energy between these molecules is very small. In tellurium, these periodic structures do not exist and large clusters are easily obtained in nucleation conditions where only small selenium clusters are present. These results are discussed and a simple nucleation model is used to illustrate this different behavior. Finally these clusters properties are correlated to the bulk structure of both materials. (orig.)

Electrodeposition of antimony, tellurium and their alloys from molten acetamide mixtures

NARCIS (Netherlands)

Nguyen, H.P.; Peng, X.; Murugan, G.; Vullers, R.J.M.; Vereecken, P.M.; Fransaer, J.

2013-01-01

We examine the electrodeposition of antimony (Sb), tellurium (Te) and their alloys from molten mixtures of acetamide - antimony chloride and tellurium chloride. The binary mixtures of acetamide with SbCl3 and TeCl 4 exhibit eutectic formation with large depressions of freezing points to below room

Neutron activation analysis of high purity tellurium

International Nuclear Information System (INIS)

Gil'bert, Eh.N.; Verevkin, G.V.; Obrazovskij, E.G.; Shatskaya, S.S.

1980-01-01

A scheme of neutron activation analysis of high purity tellurium is developed. Weighed amount of Te (0.5 g) is irradiated for 20-40 hr in the flux of 2x10 13 neutron/(cm 2 xs). After decomposition of the sample impurities of gold and palladium are determined by the extraction with organic sulphides. Tellurium separation from the remaining impurities is carried out by the extraction with monothiobenzoic acid from weakly acidic HCl solutions in the presence of iodide-ions, suppressing silver extraction. Remaining impurity elements in the refined product are determined γ-spectrometrically. The method allows to determine 34 impurities with determination limits 10 -6 -10 -11 g

The defects produced by electron irradiation in tellurium-doped germanium

International Nuclear Information System (INIS)

Fukuoka, Noboru; Saito, Haruo

1989-01-01

The nature of the irradiation induced defects in a germanium single crystal doped with tellurium was studied by DLTS and electrical measurements. The E c -0.21 eV level produced by irradiation with 1.5 MeV electrons was studied using the DLTS technique. It was found that the defect associated with this level is a divacancy. The E-center like defect (group V impurity-vacancy pair) introduces the E c -0.20 eV level in samples doped with a group V impurity. The level introduced by a tellurium (group VI impurity)-vacancy pair is deeper. The E c -0.16 eV level was generated by annealing at 430 K. A tellurium-vacancies complex is proposed as the defect associated with this level. (author)

DETECTION OF THE SECOND r-PROCESS PEAK ELEMENT TELLURIUM IN METAL-POOR STARS ,

International Nuclear Information System (INIS)

Roederer, Ian U.; Lawler, James E.; Cowan, John J.; Beers, Timothy C.; Frebel, Anna; Ivans, Inese I.; Schatz, Hendrik; Sobeck, Jennifer S.; Sneden, Christopher

2012-01-01

Using near-ultraviolet spectra obtained with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope, we detect neutral tellurium in three metal-poor stars enriched by products of r-process nucleosynthesis, BD +17 3248, HD 108317, and HD 128279. Tellurium (Te, Z = 52) is found at the second r-process peak (A ≈ 130) associated with the N = 82 neutron shell closure, and it has not been detected previously in Galactic halo stars. The derived tellurium abundances match the scaled solar system r-process distribution within the uncertainties, confirming the predicted second peak r-process residuals. These results suggest that tellurium is predominantly produced in the main component of the r-process, along with the rare earth elements.

Review of tellurium release rates from LWR fuel elements under accident conditions

International Nuclear Information System (INIS)

Lorenz, R.A.; Beahm, E.C.; Wichner, R.P.

1983-01-01

Although fission product tellurium presents a potentially significant radiohazard, its release and transport in source-term experiments is frequently overlooked because it does not possess a readily measurable, gamma emission; moreover, a recent study emphasized noble gas, iodine and cesium release from LWR fuel elements because of the large data base that exists for these materials. Some new tests show that in some cases tellurium may be held up in core material to a greater degree than previously assumed - an observation that prompts a careful reappraisal of the existing tellurium-release data and its chemical foundation

Optimization of scintillator loading with the tellurium-130 isotope for long-term stability

Science.gov (United States)

Duhamel, Lauren; Song, Xiaoya; Goutnik, Michael; Kaptanoglu, Tanner; Klein, Joshua; SNO+ Collaboration

2017-09-01

Tellurium-130 was selected as the isotope for the SNO + neutrinoless double beta decay search, as 130Te decays to 130Xe via double beta decay. Linear alkyl benzene(LAB) is the liquid scintillator for the SNO + experiment. To load tellurium into scintillator, it is combined with 1,2-butanediol to form an organometallic complex, commonly called tellurium butanediol (TeBD). This study focuses on maximizing the percentage of tellurium loaded into scintillator and evaluates the complex's long-term stability. Studies on the effect of nucleation due to imperfections in the detector's surface and external particulates were employed by filtration and induced nucleation. The impact of water on the stability of TeBD complex was evaluated by liquid-nitrogen sparging, variability in pH and induced humidity. Alternative loading methods were evaluated, including the addition of stability-inducing organic compounds. Samples of tellurium-loaded scintillator were synthesized, treated, and consistently monitored in a controlled environment. It was found that the hydronium ions cause precipitation in the loaded scintillator, demonstrating that water has a detrimental effect on long-term stability. Optimization of loaded scintillator stability can contribute to the SNO + double beta decay search.

Methods of selenium and tellurium determination in geological and enviromental materials

International Nuclear Information System (INIS)

Nazarenko, I.I.; Kislova, I.V.

1988-01-01

Atomic-absorption and atomic-emission methods of tellurium determination in ores and products of their processing are described. Flame variant with extractional concentration permits to determine tellurium with the concentration up to 6x10 -6 %, the use of graphite cuvette after preliminary concentration-up to 1x10 -6 %. Atomic-emissional method permits to determine 3x10 -4 % Te from sample of 0.5 g

Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

Directory of Open Access Journals (Sweden)

Deming Ma

2015-01-01

Full Text Available We investigate the defect feature of AsGaGaAs defect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT. Our calculations reveal that the lowest donor level of AsGaGaAs defect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of the AsGaGaAs defect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV. This suggests that AsGaGaAs defect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internal AsGaGaAs and surface AsGaGaAs defects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation of AsGaGaAs defect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

Selenium and tellurium as carbon substitutes

International Nuclear Information System (INIS)

Knapp, F.F. Jr.

1980-01-01

This review has summarized structure-activity studies with 75 Se- and /sup 123m/Te-labeled radiopharmaceuticals in which the selenium or tellurium heteroatom has been inserted between carbon-carbon bonds. The agents that have been investigated in most detail include steroids for adrenal imaging and long-chain fatty acids, and a variety of other unique agents have also been studied. Because of the great versatility of the organic chemistry of selenium and tellurium, there is continuing interest in the preparation of radiopharmaceuticals labeled with 75 Se, 73 Se, and /sup 123m/Te. There are two important factors which will determine the extent of future interest in such agents. These include the necessity of a decrease in the cost of highly enriched 122 Te to make the reactor production of /sup 123m/Te cost effective. In addition, the potential preparation of large amounts of 73 Se should stimulate the development of 73 Se-labeled radiopharmaceuticals

Selective floatation-spectrophotometric determination of tellurium (4) with papaverine and butyl rhodamine B

International Nuclear Information System (INIS)

Skripchuk, V.G.

1981-01-01

It is shown, that papaverine reacts with a bromide complex of tellurium (4) to form a compound readily floated by toluene. The floatation is carried out from an aqueous solution, 5.2 M in H 2 SO 4 , 0.2 M in KBr and 5.4x10 -3 M in papaverine. The absorbance is a function of tellurium (4) concentration over a range of 5-100 μg Te/5 ml. Such a highly sensitive reagent as butylrhodamine B can be effectively substituted for papaverine. The floatation results in better selectivity. The method makes it possible to determine tellurium in blister, anodic and cathodic copper without matrix preseparation [ru

White beam synchrotron x-ray topography of gallium arsenide

International Nuclear Information System (INIS)

Winter, J.M. Jr.; Green, R.E. Jr.; Corak, W.S.

1988-01-01

The defect structure of gallium arsenide was investigated using white beam transmission topography. The samples were cut and polished monocrystal substrates from different suppliers. The goal of the work was to determine the viability of the method for documenting various crystallographic defect structures and establishing their effect on the performance of integrated microwave circuits fabricated on the wafers. The principles of the technique, essentially identical to classical Laue x-ray diffraction, are outlined. Two distinct defect structures were determined in the topographs. Reasons for the defect structures were postulated and the application of the method for quality control assessments of manufacturer-supplied gallium arsenide substrates was assessed

Investigation of biomethylation of arsenic and tellurium during composting

International Nuclear Information System (INIS)

Diaz-Bone, Roland A.; Raabe, Maren; Awissus, Simone; Keuter, Bianca; Menzel, Bernd; Kueppers, Klaus; Widmann, Renatus; Hirner, Alfred V.

2011-01-01

Though the process of composting features a high microbiological activity, its potential to methylate metals and metalloids has been little investigated so far in spite of the high impact of this process on metal(loid) toxicity and mobility. Here, we studied the biotransformation of arsenic, tellurium, antimony, tin and germanium during composting. Time resolved investigation revealed a highly dynamic process during self-heated composting with markedly differing time patterns for arsenic and tellurium species. Extraordinary high concentrations of up to 150 mg kg -1 methylated arsenic species as well as conversion rates up to 50% for arsenic and 5% for tellurium were observed. In contrast, little to no conversion was observed for antimony, tin and germanium. In addition to experiments with metal(loid) salts, composting of arsenic hyperaccumulating ferns Pteris vittata and P. cretica grown on As-amended soils was studied. Arsenic accumulated in the fronds was efficiently methylated resulting in up to 8 mg kg -1 methylated arsenic species. Overall, these studies indicate that metal(loid)s can undergo intensive biomethylation during composting. Due to the high mobility of methylated species this process needs to be considered in organic waste treatment of metal(loid) contaminated waste materials.

Determining arsenic in elemental antimony containing selenium and tellurium

International Nuclear Information System (INIS)

Mogileva, M.G.; Kozlova, E.L.

1986-01-01

The authors have developed a method of determining arsenic in metallic antimony containing selenium, tellurium, and mercury, in which they isolated it in elementary form for separation from the antimony and the associated elements (silicon and phosphorus), followed by colorimetric determination of the arsenic from arsenic-molbdenum blue. The reducing agents to reduce the arsenic were sodium hypophosphite and tin(II) chloride, which do not reduce antimony and which do not interfere with the determination. This method of determining arsenic in metallic antimony without preliminary separation of the selenium and tellurium is in no way inferior in accuracy to the method given in All-Union State Standard (GOST) 1367.4-83

Release of tellurium and cesium from UO2 in LWR fuel rods during irradiation

International Nuclear Information System (INIS)

Malen, K.A.

1983-01-01

In this paper the release of tellurium (Te-132) and cesium (Cs-134 and Cs-137) from UO 2 -fuel is analyzed. The basis for the analysis is the experimental results from the S176 series of experiments performed at Studsvik. It seems that the model developed earlier for release of iodine applies also to tellurium and cesium. This model assumes sweeping up of the species in question by moving grain boundaries and subsequent release through grain boundary porosity. An interesting extra feature is deposition of tellurium at temperatures in the range 1500-2000 K believed to be due to condensation. (author)

METALCOMPLEXES OF TELLURIUM-CONTAINING AMINES AND AZOMETINES

Directory of Open Access Journals (Sweden)

G. M. Abakarov

2014-01-01

Full Text Available In this article methods of synthesis and reactionary ability of metalcomplexes of tellurium-containing amines, azometines, of a problem of competitive coordination with use of the principle of "soft" and "rigid" acids and the bases (R. Pearson.

The characterisation of vapour-phase alkali metal-tellurium-oxygen species

International Nuclear Information System (INIS)

Gomme, R.A.; Ogden, J.S.; Bowsher, B.R.

1986-10-01

Detailed assessments of hypothetical severe accidents in light water reactors require the identification of the chemical forms of the radionuclides in order to determine their transport characteristics. Caesium and tellurium are important volatile fission products in accident scenarios. This report describes detailed studies to characterise the chemical species that vaporise from heated mixtures of various alkali metal-tellurium-oxygen systems. The molecular species were characterised by a combination of quadrupole mass spectrometry and matrix isolation-infrared spectroscopy undertaken in conjunction with experiments involving oxygen-18 substitution. The resulting spectra were interpreted in terms of a vapour-phase molecule with the stoichiometry M 2 TeO 3 (M = K,Rb,Cs) for M/Te molecular ratios of ∼ 2, and polymeric species for ratios < 2. This work has demonstrated the stability of caesium tellurite. The formation of this relatively low-volatility, water-soluble species could significantly modify the transport and release of caesium and tellurium. The data presented in this report should allow more comprehensive thermodynamic calculations to be undertaken that assist in the quantification of fission product behaviour during severe reactor accidents. (author)

Study of current instabilities in high resistivity gallium arsenide

International Nuclear Information System (INIS)

Barraud, A.

1968-01-01

We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [fr

Double beta decay of tellurium-130

International Nuclear Information System (INIS)

Richardson, J.F.; Manuel, O.K.; Sinha, B.; Thorpe, R.I.

1986-01-01

The isotopic composition of xenon is reported in four, neutron-irradiated tellurium minerals - tellurobismuthite from Boliden, Sweden, native tellurium from the Good Hope Mine of Gunnison County, Colorado, altaite from the Kirkland Lake area, Ontario, and altaite from the Mattagami Lake area, Quebec. From the amount of radiogenic 130 Xe and pile-produced 131 Xe in these samples, it is concluded that the half-life of 130 Te for ββ-decay is 21 y based on measured values of (1.0+-0.3) . 10 21 y and higher. Our results demonstrate that there has been no significant partial leakage of radiogenic 130 Xe from these minerals over geologic time. Larger values of Tsub(1/2), as indicated from some of the analysis reported here and in other studies, are attributed to recrystallization of the soft telluride minerals and complete resetting of the Te-Xe system after mineralization. The value obtained here for the half-life of 130 Te is substantiated by recent measurements on xenon in tellurides from Kalgoorlie, Western Australia. (orig.)

Sulfur, selenium, tellurium and polonium

International Nuclear Information System (INIS)

Berry, F.J.

1987-01-01

This chapter on the coordination compounds of sulfur, selenium, tellurium and polonium starts with an introduction to the bonding, valence and geometry of the elements. Complexes of the group VIB elements are discussed with particular reference to the halo and pseudohalide complexes, oxo acid complexes, oxygen and nitrogen donor complexes and sulfur and selenium donor complexes. There is a section on the biological properties of the complexes discussed. (UK)

Electrical properties of indium arsenide irradiated with fast neutrons

International Nuclear Information System (INIS)

Kolin, N.G.; Osvenskii, V.B.; Rytova, N.S.; Yurova, E.S.

1987-01-01

A study was made of the influence of irradiation with fast reactor neutrons on electrical properties of indium arsenide samples with different dopant concentrations. The laws governing the formation and annealing of radiation defects in indium arsenide were found to be governed by the donor-acceptor interaction. Depending on the density of free carriers in the original crystal, irradiation could produce charged defects of predominantly donor or acceptor types. Donor defects in irradiated InAs samples were annealed practically completely, whereas a considerable fraction of residual acceptor defects was retained even after heat treatment at 900 degree C. The concentration of these residual acceptors depended on the electron density at the annealing temperature

RILIS-ionized mercury and tellurium beams at ISOLDE CERN

Energy Technology Data Exchange (ETDEWEB)

Day Goodacre, T., E-mail: thomas.day.goodacre@cern.ch [CERN (Switzerland); Billowes, J. [The University of Manchester, School of Physics and Astronomy (United Kingdom); Chrysalidis, K. [CERN (Switzerland); Fedorov, D. V. [Petersburg Nuclear Physics Institute (Russian Federation); Fedosseev, V. N.; Marsh, B. A. [CERN (Switzerland); Molkanov, P. L. [Petersburg Nuclear Physics Institute (Russian Federation); Rossel, R. E.; Rothe, S.; Seiffert, C. [CERN (Switzerland); Wendt, K. D. A. [Johannes Gutenberg Universität, Institut für Physik (Germany)

2017-11-15

This paper presents the results of ionization scheme development for application at the ISOLDE Resonance Ionization Laser Ion Source (RILIS). Two new ionization schemes for mercury are presented: a three-step three-resonance ionization scheme, ionizing via an excitation to a Rydberg level and a three-step two-resonance ionization scheme, with a non-resonant final step to the ionization continuum that corresponded to a factor of four higher ionization efficiency. The efficiency of the optimal mercury ionization scheme was measured, together with the efficiency of a new three-step three resonance ionization scheme for tellurium. The efficiencies of the mercury and tellurium ionization schemes were determined to be 6 % and >18 % respectively.

Nano-Structured Crystalline Te Films by Laser Gas-Phase Pyrolysis of Dimethyl Tellurium

Czech Academy of Sciences Publication Activity Database

Pola, Josef; Pokorná, Veronika; Boháček, Jaroslav; Bastl, Zdeněk; Ouchi, A.

2004-01-01

Roč. 71, č. 2 (2004), s. 739-746 ISSN 0165-2370 R&D Projects: GA AV ČR IAA4072107; GA MŠk OC 523.60 Institutional research plan: CEZ:AV0Z4072921; CEZ:AV0Z4032918; CEZ:AV0Z4040901 Keywords : dimethyl tellurium * tellurium films * laser Subject RIV: CA - Inorganic Chemistry Impact factor: 1.352, year: 2004

Assessment of arsenic exposures and controls in gallium arsenide production.

Science.gov (United States)

Sheehy, J W; Jones, J H

1993-02-01

The electronics industry is expanding the use of gallium arsenide in the production of optoelectronic devices and integrated circuits. Workers in the electronics industry using gallium arsenide are exposed to hazardous substances such as arsenic, arsine, and various acids. Arsenic requires stringent controls to minimize exposures (the current OSHA PEL for arsenic is 10 micrograms/m3 and the NIOSH REL is 2 micrograms/m3 ceiling). Inorganic arsenic is strongly implicated in respiratory tract and skin cancer. For these reasons, NIOSH researchers conducted a study of control systems for facilities using gallium arsenide. Seven walk-through surveys were performed to identify locations for detailed study which appeared to have effective controls; three facilities were chosen for in-depth evaluation. The controls were evaluated by industrial hygiene sampling. Including personal breathing zone and area air sampling for arsenic and arsine; wipe samples for arsenic also were collected. Work practices and the use of personal protective equipment were documented. This paper reports on the controls and the arsenic exposure results from the evaluation of the following gallium arsenide processes: Liquid Encapsulated Czochralski (LEC) and Horizontal Bridgeman (HB) crystal growing, LEC cleaning operations, ingot grinding/wafer sawing, and epitaxy. Results at one plant showed that in all processes except epitaxy, average arsenic exposures were at or above the OSHA action level of 5 micrograms/m3. While cleaning the LEC crystal pullers, the average potential arsenic exposure of the cleaning operators was 100 times the OSHA PEL. At the other two plants, personal exposures for arsenic were well controlled in LEC, LEC cleaning, grinding/sawing, and epitaxy operations.

Thermoelectric properties of electrodeposited tellurium films and the sodium lignosulfonate effect

International Nuclear Information System (INIS)

Abad, Begoña; Rull-Bravo, Marta; Hodson, Stephen L.; Xu, Xianfan; Martin-Gonzalez, Marisol

2015-01-01

The effect of the addition of a surfactant, sodium lignosulfonate (SLS), on the thermoelectric properties of tellurium films prepared by electrochemical deposition is studied. The growth mechanism is found to have an important role in the thermoelectric properties since the grain size of the films is sharply reduced when the surfactant is added to the solution. For this reason, the electrical resistivity of the tellurium films when the surfactant is not added is 229 μΩ·m, which is lower than 798 μΩ·m with SLS. The Seebeck coefficient values are not influenced, with values in the vicinity of 285 μV/K for both solutions. The power factor resulted higher values than previous works, reaching values of 280 μW/m·K 2 (without SLS) and 82 μW/m·K 2 (with SLS) at room temperature. Finally, the thermal conductivity was measured by means of the Photoacoustic technique, which showed values of the order of 1 W/m·K for both solutions, which is a factor of 3 less than the bulk value of tellurium. A notable observation is that the power factor and the thermal conductivity of electrodeposited tellurium films have the same order of magnitude of bismuth telluride films grown by electrodeposition. The figure of merit is estimated to be approximately one order of magnitude higher than the bulk value, 0.09 without SLS and 0.03 with SLS, both at room temperature

Influence of ion beam irradiation induced defects on the structural, optical and electrical properties of tellurium nanowires

Energy Technology Data Exchange (ETDEWEB)

Kumar, Narinder [Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055 (India); Department of Physics, Haryana College of Technology & Management, Kaithal, 136027 (India); Kumar, Rajesh [Department of Physics, RN College of Engineering & Technology, Madlauda, 132104 (India); Kumar, Sushil, E-mail: sushil_phys@rediffmail.com [Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055 (India); Chakarvarti, S.K. [Research and Development, Manav Rachana International University, Faridabad, 121001 (India)

2016-11-01

In this study, tellurium nanowires were electrodeposited into the polymer membranes from aqueous acidic bath containing HTeO{sub 2}{sup +} ions. The field emission scanning electron microscopy (FESEM) images confirmed the formation of uniform and straight nanowires. The influence of 110 MeV Ni{sup 8+} ion irradiation induced defects on the structural, optical and electrical properties of as–deposited tellurium nanowires were examined using X-ray diffraction (XRD), UV–visible absorption spectroscopy and current–voltage (I–V) measurements. The XRD data depicted the hexagonal phase of tellurium nanowires and further revealed a variation in the intensity of diffraction peaks of ion irradiated nanowires. Williamson–Hall (WH) analysis is used for convoluting the size and microstrain contributions to the width of diffraction peaks. Tellurium nanowires exhibited a distinct absorbance band in the visible region at 686 nm, while this was absent in bulk tellurium. Electrical properties of nanowires are explored on the basis of I–V curves, which revealed a significant increase in the electrical conductivity of irradiated nanowires. A possible mechanism for the enhanced electrical conductivity is the increase in carrier concentration due to thermally excited defects. The defects produced by ion irradiation play a vital role in modifying the properties of semiconducting nanowires. - Highlights: • 110 MeV Ni{sup 8+} ion beam induced changes in tellurium nanowires have been examined. • Nanowires were prepared using template electrodeposition method. • Irradiation improved the electrical conductivity of tellurium nanowires. • Mechanism for enhanced electrical conductivity of irradiated nanowires was discussed.

Electron emission from individual indium arsenide semiconductor nanowires

NARCIS (Netherlands)

Heeres, E.C.; Bakkers, E.P.A.M.; Roest, A.L.; Kaiser, M.A.; Oosterkamp, T.H.; Jonge, de N.

2007-01-01

A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve,

Kinetics and mechanism of oxidation of tellurium (IV) by periodate in alkaline medium

International Nuclear Information System (INIS)

Srinivas, K.; Vani, P.; Dikshitulu, L.S.A.

1995-01-01

Detailed kinetic study of the oxidation of tellurium (IV) by periodate in alkaline medium has been carried out to compare the mechanisms of oxidation in the acid and alkaline media. It is interesting to note that the rate step involves a two-electron transfer from tellurium (IV) to periodate in alkaline medium although the kinetic pattern is somewhat different from that in the acid medium. 7 refs., 1 tab

Optical Characterization of Thick Growth Orientation-Patterned Gallium Arsenide

National Research Council Canada - National Science Library

Meyer, Joshua W

2006-01-01

.... Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques...

Chemical Process for Treatment of Tellurium and Chromium Liquid Waste from I-131 Radioisotope Production

International Nuclear Information System (INIS)

Zainus-Salimin; Gunandjar; Dedy-Harsono; Hendro; Sugeng-Purnomo; Mohammad-Faruq; Zulfakhri

2000-01-01

The I-131 radioisotope is used in nuclear medicine for diagnosis and therapy. The I-131 radioisotope is produced by wet distillation at Bandung Nuclear Research Center and generated about 4,875 Itr of liquid waste containing 2,532.8 ppm of tellurium and 1,451.8 ppm chromium at pH 1. Considering its negative impact to the environment caused by toxic behaviour of tellurium and chromium, it is necessary to treat chemically that's liquid waste. The research of chemical treatment of tellurium and chromium liquid waste from I-131 radioisotope production has been done. The steps of process are involved of neutralisation with NaOH, coagulation-flocculation process for step I using Ca(OH) 2 coagulant for precipitation of sulphate, sulphite, oxalic, chrome Cr 3+ , and coagulation-flocculation process for step II using BaCI 2 coagulant for precipitation of chrome Cr 6+ and tellurium from the supernatant of coagulation in step I. The best result of experiment was achieved at 0.0161 ppm of chromium concentration on the supernatant from coagulation-flocculation of step I using 3.5 g Ca(OH) 2 for 100 ml of liquid waste, and 0.95 ppm of tellurium concentration on the final supernatant from coagulation-flocculation by of step II using 0.7 g BaCI 2 for supernatant from coagulation of step I. (author)

Enhancement of Au-Ag-Te contents in tellurium-bearing ore minerals via bioleaching

Science.gov (United States)

Choi, Nag-Choul; Cho, Kang Hee; Kim, Bong Ju; Lee, Soonjae; Park, Cheon Young

2018-03-01

The purpose of this study was to enhance the content of valuable metals, such as Au, Ag, and Te, in tellurium-bearing minerals via bioleaching. The ore samples composed of invisible Au and Au paragenesis minerals (such as pyrite, chalcopyrite, sphalerite and galena) in combination with tellurium-bearing minerals (hessite, sylvanite and Tellurobismuthite) were studied. Indigenous microbes from mine drainage were isolated and identified as Acidithiobacillus ferrooxidans, which were used in bioleaching after adaption to copper. The effect of the microbial adaption on the bioleaching performance was then compared with the results produced by the non-adaptive process. The microbial adaption enhanced the Au-Ag-Te contents in biological leaching of tellurium-bearing ore minerals. This suggests that bioleaching with adapted microbes can be used both as a pretreatment and in the main recovery processes of valuable metals.

Peroxide coordination of tellurium in aqueous solutions

Energy Technology Data Exchange (ETDEWEB)

Mikhaylov, Alexey A.; Medvedev, Alexander G. [Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow (Russian Federation); The Casali Center of Applied Chemistry, The Institute of Chemistry, The Hebrew University of Jerusalem (Israel); Churakov, Andrei V.; Grishanov, Dmitry A.; Prikhodchenko, Petr V. [Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow (Russian Federation); Lev, Ovadia [The Casali Center of Applied Chemistry, The Institute of Chemistry, The Hebrew University of Jerusalem (Israel)

2016-02-15

Tellurium-peroxo complexes in aqueous solutions have never been reported. In this work, ammonium peroxotellurates (NH{sub 4}){sub 4}Te{sub 2}(μ-OO){sub 2}(μ-O)O{sub 4}(OH){sub 2} (1) and (NH{sub 4}){sub 5}Te{sub 2}(μ-OO){sub 2}(μ-O)O{sub 5}(OH).1.28 H{sub 2}O.0.72 H{sub 2}O{sub 2} (2) were isolated from 5 % hydrogen peroxide aqueous solutions of ammonium tellurate and characterized by single-crystal and powder X-ray diffraction analysis, by Raman spectroscopy and thermal analysis. The crystal structure of 1 comprises ammonium cations and a symmetric binuclear peroxotellurate anion [Te{sub 2}(μ-OO){sub 2}(μ-O)O{sub 4}(OH){sub 2}]{sup 4-}. The structure of 2 consists of an unsymmetrical [Te{sub 2}(μ-OO){sub 2}(μ-O)O{sub 5}(OH)]{sup 5-} anion, ammonium cations, hydrogen peroxide, and water. Peroxotellurate anions in both 1 and 2 contain a binuclear Te{sub 2}(μ-OO){sub 2}(μ-O) fragment with one μ-oxo- and two μ-peroxo bridging groups. {sup 125}Te NMR spectroscopic analysis shows that the peroxo bridged bitellurate anions are the dominant species in solution, with 3-40 %wt H{sub 2}O{sub 2} and for pH values above 9. DFT calculations of the peroxotellurate anion confirm its higher thermodynamic stability compared with those of the oxotellurate analogues. This is the first direct evidence for tellurium-peroxide coordination in any aqueous system and the first report of inorganic tellurium-peroxo complexes. General features common to all reported p-block element peroxides could be discerned by the characterization of aqueous and crystalline peroxotellurates. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Phenylethynyl-butyltellurium inhibits the sulfhydryl enzyme Na+, K+ -ATPase: an effect dependent on the tellurium atom.

Science.gov (United States)

Quines, Caroline B; Rosa, Suzan G; Neto, José S S; Zeni, Gilson; Nogueira, Cristina W

2013-11-01

Organotellurium compounds are known for their toxicological effects. These effects may be associated with the chemical structure of these compounds and the oxidation state of the tellurium atom. In this context, 2-phenylethynyl-butyltellurium (PEBT) inhibits the activity of the sulfhydryl enzyme, δ-aminolevulinate dehydratase. The present study investigated on the importance of the tellurium atom in the PEBT ability to oxidize mono- and dithiols of low molecular weight and sulfhydryl enzymes in vitro. PEBT, at high micromolar concentrations, oxidized dithiothreitol (DTT) and inhibited cerebral Na(+), K(+)-ATPase activity, but did not alter the lactate dehydrogenase activity. The inhibition of cerebral Na(+), K(+)-ATPase activity was completely restored by DTT. By contrast, 2-phenylethynyl-butyl, a molecule without the tellurium atom, neither oxidized DTT nor altered the Na(+), K(+)-ATPase activity. In conclusion, the tellurium atom of PEBT is crucial for the catalytic oxidation of sulfhydryl groups from thiols of low molecular weight and from Na(+), K(+)-ATPase.

Study On Analytical Methods Of Tellurium Content In Natriiodide (Na131I) Radiopharmaceutical Solution Produced In The Dalat Nuclear Reactor

International Nuclear Information System (INIS)

Vo Thi Cam Hoa; Duong Van Dong; Nguyen Thi Thu; Chu Van Khoa

2007-01-01

This report describes the practical methods for analyzing of Tellurium content in Na 131 I solution produced at the Dalat Nuclear Research Institute. We studied analytical methods to control Tellurium content in final Na 131 I solution product used in medical purposes by three methods such as: spot test, gamma spectrometric and spectrophotometric methods. These investigation results are shown that the spot test method is suitable for controlling Tellurium trace in the final product. This spot test can be determinate Tellurium trace less than 10 ppm and are used to quality control of Na 131 I solution using in medical application. (author)

Simple and effective method for nuclear tellurium isomers separation from antimony cyclotron targets

International Nuclear Information System (INIS)

Bondarevskij, S.I.; Eremin, V.V.

1999-01-01

Simple and effective method of generation of tellurium nuclear isomers from irradiated on cyclotron metallic antimony is suggested. Basically this method consists in consideration of the big difference in volatilities of metallic forms of antimony, tin and tellurium. Heating of the tin-antimony alloy at 1200 K permits to separate about 90 % of produced quantity of 121m Te and 123m Te (in this case impurity of antimony radionuclides is not more than 1 % on activity) [ru

Simultaneous determination of selenium and tellurium in native sulfur by atomic absorption spectrophotometry

International Nuclear Information System (INIS)

Arikawa, Yoshiko; Hirai, Shoji; Ozawa, Takejiro.

1979-01-01

A method for the determination of selenium and tellurium in native sulfur has been investigated by means of atomic absorption spectrophotometry. Native sulfur collected from around fumarole or volcanic crater is ground down into powder, a portion of which weighing 1 g is subjected to analysis. A 2.6% (w/v) sodium hydroxide solution is added by 10 ml to the sample in a teflon beaker, and the mixture is then heated on a hot plate. Sulfur is decomposed and dissolved in the form of disulfide and thiosulfate. A 30% hydrogenperoxide solution is added by 10 ml to oxidize them to sulfate. At the same time selenium and tellurium contained in the sulfur sample are also thought to be oxidized to Se(VI) and Te(VI) states. The solution is neutralized with hydrochloric acid and diluted with distilled water to 100 ml. The sample solution thus prepared is sprayed into the air-acetylene flame of the atomic absorption spectrophotometer. The absorbance is measured at 195.9 nm for selenium and 214.2 nm for tellurium. Calibration curve is prepared by measuring the absorbances of the solutions prepared as follows. One gram portions of pure sulfur (99.9999%) are decomposed as for the samples. After neutralization, standard solutions containing each same amount of selenium and tellurium (0 -- 1000 μg) are added to the sulfur solution and then diluted with water to 100 ml. The standard deviations were estimated to be 50.4 ppm for selenium at 756 ppm and 16.6 ppm for tellurium at 587 ppm. For the check of the reliability of the method, results were compared with those obtained by neutron activation analysis. Results obtained by both methods showed good agreement. (author)

Selenium- or tellurium- containing bile acids and derivatives thereof

International Nuclear Information System (INIS)

Monks, R.; Riley, A.L.M.

1981-01-01

This invention relates to the preparation of selenium and tellurium derivatives, particularly γ-emitting radioactive derivatives of bile acids and bile salts. Such compounds are valuable in the examination of body function, especially small bowel function. (author)

Electrochemical characterization of the underpotential deposition of tellurium on Au electrode

International Nuclear Information System (INIS)

Zhu, W.; Yang, J.Y.; Zhou, D.X.; Bao, S.Q.; Fan, X.A.; Duan, X.K.

2007-01-01

Electrochemical characterization of the underpotential deposition (UPD) of tellurium on Au substrate has been performed in this paper. The mechanism of Te deposition and its voltammetry dependence on the Te ion concentration were studied, and it suggests that variations in the metal ion concentration may affect the UPD process kinetics. The effect of tellurium adsorbates on UPD behavior of Te has also been investigated. The results show that the tellurium adsorbates could be irreversibly adsorbed upon the Au substrate surface under the open-circuit conditions. Subsequent removal of the Te adsorbates was also proved to be very difficult within the Au double-layer region, and a standard electrochemical cleaning procedure is necessary to remove the Te adsorbates completely. When the potential was cycled into the Au oxidation region, a substantial loss of Te adsobates was observed, which occurs simultaneously with the Au oxidation features. Scan rate dependent cyclic voltammetry experiments reveal that the peak current in the Te UPD peak is not a linear function of the scan rate, ν, but of a 2/3 power of the scan rate, ν 2/3 . It is in good consistent with a two-dimension nucleation and growth mechanism

Speciation analysis of tellurium by solid-phase extraction in the presence of ammonium pyrrolidine dithiocarbamate and inductively coupled plasma mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

Yu, Chunhai; Cai, Qiantao; Guo, Zhong-Xian; Yang, Zhaoguang [Centre for Advanced Water Technology, Innovation Centre (NTU), Singapore (Singapore); Khoo, Soo Beng [Department of Chemistry, National University of Singapore (Singapore)

2003-05-01

Under acidic conditions tellurium(IV) formed a complex with ammonium pyrrolidine dithiocarbamate (APDC). The tellurium(IV) complex was completely retained on a non-polar Isolute silica-based octadecyl (C{sub 18}) sorbent-containing solid-phase extraction (SPE) cartridge, while the uncomplexed Te(VI) passed through the cartridge and remained as a free species in the solution. Only partial Te(IV) was retained on the SPE cartridge for samples without addition of APDC. On the basis of different retention behaviours of the complexed Te(IV) and uncomplexed Te(VI), a simple and highly sensitive method is proposed for the determination of total tellurium and Te(VI) by SPE separation and inductively coupled plasma mass spectrometry (ICP-MS) detection. The Te(IV) concentration was calculated as the difference between total tellurium and Te(VI) concentrations. The detection limit (3{sigma}) is 3 ng L{sup -1} tellurium. Factors affecting the separation and detection of tellurium species were investigated. Coexisting ions did not show significant interferences with the Te(IV)-APDC complex retention and the subsequent ICP-MS detection of Te. The method has been successfully applied to the tellurium speciation analysis in waters with spiked recoveries for Te(IV) and Te(VI) of 86.0-108% and 87.1-97.4%, respectively. (orig.)

Intergranular tellurium cracking of nickel-based alloys in molten Li, Be, Th, U/F salt mixture

Science.gov (United States)

Ignatiev, Victor; Surenkov, Alexander; Gnidoy, Ivan; Kulakov, Alexander; Uglov, Vadim; Vasiliev, Alexander; Presniakov, Mikhail

2013-09-01

In Russia, R&D on Molten Salt Reactor (MSR) are concentrated now on fast/intermediate spectrum concepts which were recognized as long term alternative to solid fueled fast reactors due to their attractive features: strong negative feedback coefficients, easy in-service inspection, and simplified fuel cycle. For high-temperature MSR corrosion of the metallic container alloy in primary circuit is the primary concern. Key problem receiving current attention include surface fissures in Ni-based alloys probably arising from fission product tellurium attack. This paper summarizes results of corrosion tests conducted recently to study effect of oxidation state in selected fuel salt on tellurium attack and to develop means of controlling tellurium cracking in the special Ni-based alloys recently developed for molten salt actinide recycler and tranforming (MOSART) system. Tellurium corrosion of Ni-based alloys was tested at temperatures up to 750 °C in stressed and unloaded conditions in molten LiF-BeF2 salt mixture fueled by about 20 mol% of ThF4 and 2 mol% of UF4 at different [U(IV)]/[U(III)] ratios: 0.7, 4, 20, 100 and 500. Following Ni-based alloys (in mass%): HN80М-VI (Mo—12, Cr—7.6, Nb—1.5), HN80МТY (Mo—13, Cr—6.8, Al—1.1, Ti—0.9), HN80МТW (Mo—9.4, Cr—7.0, Ti—1.7, W—5.5) and ЕМ-721 (W—25.2, Cr—5.7, Ti—0.17) were used for the study in the corrosion facility. If the redox state the fuel salt is characterized by uranium ratio [U(IV)]/[U(III)] uranium intermetallic compounds and alloys with nickel and molybdenum. This leads to spontaneous behavior of alloy formation processes on the specimens' surface and further diffusion of uranium deep into the metallic phase. As consequence of this films of intermetallic compounds and alloys of nickel, molybdenum, tungsten with uranium are formed on the alloys specimens' surface, and intergranular corrosion does not take place. In the fuel salt with [U(IV)]/[U(III)] = 4-20 the potentials of uranium

Thermodynamics of gallium arsenide electrodeposition

International Nuclear Information System (INIS)

Perrault, G.G.

1986-01-01

Gallium Arsenide is well known as a very interesting compound for photoelectrical devices. Up to now, it has been prepared mostly by high temperature technology, and the authors considered that it might be of interest to set up an electrodeposition technique suitable to prepare thin layers of this compound. A reaction sequence similar to the one observed for Cadmium Sulfide or Cadmium Telluride could be considered. In these cases, the metal chalcogenide is obtained from the precipitation of the metal ions dissolved in the solutions by the reduction product of the metalloidic compound

Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

Science.gov (United States)

2011-03-01

spectrum, photoluminescence (PL), and refractive index measurements. Other methods such as infrared imagery and micro probe wavelength dispersing ...States. AFIT/DS/ENP/11-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF MELT- GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ...CHARACTERIZATION OF MELT-GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ALLOYS Jean Wei, BS, MS Approved

Determination of tellurium in coal samples by means of graphite furnace atomic absorption spectrometry after coprecipitation with iron(III) hydroxide

Energy Technology Data Exchange (ETDEWEB)

Oda, S.; Arikawa, Y. [Japan Womens University, Tokyo (Japan)

2005-11-01

A simple and accurate method for the determination of tellurium in coal samples was investigated by the combustion of samples under a high pressure of oxygen and coprecipitation with Fe(OH){sub 3}, followed by a measurement by graphite furnace atomic absorption spectrometry (GF-AAS). About 0.5 g of an accurately weighed ground coal sample and 0.5 g of starch were combusted in an oxygen combustion bomb filled with oxygen to 3 MPa and added with 3 ml of water as an absorbing solution. The formed tellurium trioxide TeOs dissolved in water as TeO{sub 4}{sup 2-}, which was in turn reduced to TeO{sub 3}{sup 2-} by heating. After diluting the above-mentioned solution up to about 50 ml with water, Fe(OH){sub 3} is formed upon adding Fe(NO{sub 3}){sub 3} and sodium hydroxide solutions at pH 8-9 and left standing overnight. After dissolving the precipitate by HCl, the solution was diluted to 10 ml with water and the concentration of tellurium was measured by GF-AAS at a wavelength of 214.3 nm. The standard addition method was employed for the determination of tellurium in real coal samples, because those processes for the formation of tellurium(VI) oxide and coprecipitation with Fe(OH)3 were interfered by matrices. For NIST SRM 1632c, the standard coal sample tellurium content of 0.057 {+-} 0.004 mg kg{sup -1} was in good agreement with the information value of 0.05 mg kg{sup -1} with 7% of RSD in five replicate analyses. The tellurium contents in 20 real coal samples given by Center for Coal Utilization, Japan were also determined. The tellurium contents in these samples were scattered over the narrow range between 0.032 and 0.100 mg kg{sup -1}.

Site-specific nucleation and controlled growth of a vertical tellurium nanowire array for high performance field emitters

International Nuclear Information System (INIS)

Safdar, Muhammad; Zhan Xueying; Mirza, Misbah; Wang Zhenxing; Sun Lianfeng; He Jun; Niu Mutong; Zhang Jinping; Zhao Qing

2013-01-01

We report the controlled growth of highly ordered and well aligned one-dimensional tellurium nanostructure arrays via a one-step catalyst-free physical vapor deposition method. The density, size and fine structures of tellurium nanowires are systematically studied and optimized. Field emission measurement was performed to display notable dependence on nanostructure morphologies. The ordered nanowire array based field emitter has a turn-on field as low as 3.27 V μm −1 and a higher field enhancement factor of 3270. Our finding offers the possibility of controlling the growth of tellurium nanowire arrays and opens up new means for their potential applications in electronic devices and displays. (paper)

Exploring molecular and spin interactions of Tellurium adatom in reduced graphene oxide

Energy Technology Data Exchange (ETDEWEB)

Alegaonkar, Ashwini [Department of Chemistry, Savitribai Phule Pune University (Formerly University of Pune), Ganeshkhind, Pune, 411 007, MS (India); Alegaonkar, Prashant [Department of Applied Physics, Defence Institute of Advance Technology, Girinagar, Pune, 411 025, MS (India); Pardeshi, Satish, E-mail: skpar@chem.unipune.ac.in [Department of Chemistry, Savitribai Phule Pune University (Formerly University of Pune), Ganeshkhind, Pune, 411 007, MS (India)

2017-07-01

The transport of spin information fundamentally requires favourable molecular architecture and tunable spin moments to make the medium pertinent for spintronic. We report on achieving coherent molecular-spin parameters for rGO due to Tellurium (Te) adatom. Initially, GO prepared using graphite, was modified into rGO by in situ incorporation of 1 (w/w)% of Te. Both the systems were subjected to ESCA, FTIR, Raman dispersion, ESR spectroscopy, and electron microscopy. Analysis revealed that, Te substantially reacted with epoxides, carbonyl, and carboxylate groups that improved C-to-O ratio by twice. However, the spin splitting character, between Te and C, seems to be quenched. Moreover, Te altered the dynamical force constant between C-C and C=C that generated the mechanical stress within rGO network. The layer conjugation, nature of folding, symmetry, and electronic states of the edges were also affected by precipitation and entrapment of Te. The calculated dynamic molecular Raman and ESR spin parameters indicated that, Te acted as a bridging element for long range spin transport. This is particularly due to, the p-orbital moments of Te contributing, vectorially, to spin relaxation process operative at broken inversion symmetry sites. Our study suggests that, facile addition of Te in rGO is useful to achieve favourable spintronic properties. - Highlights: • Spin interactions and molecular dynamics modification due to Tellurium adatom in rGO. • Molecular level manipulation of Tellurium adatom for favourable spintronic properties. • Bychocov-Rashaba coupling are the operative channels in rGO. • Extrinsic coupling component get added vectorially by Tellurium. • Te-rGO is a viable medium for molecular spintronics.

Dismantling and chemical characterization of spent Peltier thermoelectric devices for antimony, bismuth and tellurium recovery.

Science.gov (United States)

Balva, Maxime; Legeai, Sophie; Garoux, Laetitia; Leclerc, Nathalie; Meux, Eric

2017-04-01

Major uses of thermoelectricity concern refrigeration purposes, using Peltier devices, mainly composed of antimony, bismuth and tellurium. Antimony was identified as a critical raw material by EU and resources of bismuth and tellurium are not inexhaustible, so it is necessary to imagine the recycling of thermoelectric devices. That for, a complete characterization is needed, which is the aim of this work. Peltier devices were manually dismantled in three parts: the thermoelectric legs, the alumina plates on which remain the electrical contacts and the silicone paste used to connect the plates. The characterization was performed using five Peltier devices. It includes mass balances of the components, X-ray diffraction analysis of the thermoelectric legs and elemental analysis of each part of the device. It appears that alumina represents 45% of a Peltier device in weight. The electrical contacts are mainly composed of copper and tin, and the thermoelectric legs of bismuth, tellurium and antimony. Thermoelectric legs appear to be Se-doped Bi 2 Te 3 and (Bi 0,5 Sb 1,5 )Te 3 for n type and p type semiconductors, respectively. This work shows that Peltier devices can be considered as a copper ore and that thermoelectric legs contain high amounts of bismuth, tellurium and antimony compared to their traditional resources.

Comparison of analytical possibilities of inversion voltammetry of tellurium with cathodic and anodic potential scanning taking layer-by-layer analysis of GaAs-Te films as example

International Nuclear Information System (INIS)

Kaplin, A.A.; Portnyagina, Eh.O.; Gridaev, V.F.

1979-01-01

Possibility of application in analytical purposes of the process of tellurium precipitation electrosolution from the surfaces of graphite and mercury-graphite electrodes at the cathode scanning of the potential is shown. As a result of comparison of direct and inversion scanning with cathodic and anodic scanning of the potential, variants of voltammetric method of tellurium determination in artificial solutions and, taking the developed method of layer-by-layer analysis of the GaAsTe films as an example, advantage of mercury-graphite electrode with cathodic scanning as compared to graphite electrode with cathode scanning of the potential is shown. Reproducibility of the GaAs film analysis results according to anodic and cathodic tellurium peaks is satisfactory. Maximum deviation from the results of analysis of oxidation peaks and tellurium peduction does not exceed 15 rel. %. Thus, for tellurium concentrations, exceeding 5x10 -6 g-ion/l, both anodic and cathodic scanning of the potential can be used, though error in tellurium determination according to cathodic peaks is 1.5-2.0 times higher. At tellurium amounts lower 5x10 -6 g-ion/l the determination should be carried out according to the peaks of tellurium anodic oxidation from the surface of graphite electrode or according to the peaks of tellurium cathodic reduction from the surface of mercury-graphite electrode

Modelling the chemical behaviour of tellurium species in the reactor pressure vessel and the reactor cooling system under severe accident conditions

International Nuclear Information System (INIS)

Alonso, A.; Gonzalez, C.

1991-07-01

This state of the art report contains information on the behaviour of tellurium and its compounds in the reactor pressure vessel and the reactor coolant system under light water reactor severe accident conditions. To characterise tellurium behaviour, it is necessary the previous knowledge of the species of tellurium released from the core, and simultaneity of its release with that of other materials which can alter the transport, for instance, control rod and structural materials. Release and transport experiments have been reviewed along with the models implemented in the codes which are used in the international community: TRAPMELT, RAFT, VICTORIA and SOPHIE. From the experiments, it can be concluded that other species different to Te 2 , such as tin telluride and cesium telluride, may be released from the fuel. That is why they must be considered in the transport phenomena. There is also experimental evidence of the strong interaction of Te 2 with Inconel 600 and stainless steel of the pipe walls and structures, however this strong interaction is in competition with the interaction of tellurium with aerosols, which under severe accident conditions may represent an area greater than that of the primary system. It is for the absence of significant tellurium species in the transport models, and also for the interaction of tellurium with aerosols, for which some codes show the greatest deficiencies

The enhancing of Au-Ag-Te content in tellurium-bearing ore mineral by bio-oxidation-leaching

Science.gov (United States)

Kim, PyeongMan; Kim, HyunSoo; Myung, EunJi; Kim, YoonJung; Lee, YongBum; Park*, CheonYoung

2015-04-01

The purpose of this study is to enhance the content of valuable metals such as Au-Ag-Te in tellurium-bearing minerals by bio-oxidation-leaching. It was confirmed that pyrite, chalcopyrite, sphalerite and galena were produced together with tellurium-bearing minerals including hessite, sylvanite and tellurobismuthite from ore minerals and concentrates through microscopic observation and SEM/EDS analysis. In a bio-oxidation-leaching experiment, with regard to Au, Ag, Te, Cu and Fe, the changes in the amount of leaching and the content of leaching residues were compared and analyzed with each other depending on the adaptation of an indigenous microbe identified as Acidithiobacillus ferrooxidans. As a result of the experiment, the Au-Ag-Te content in tellurium-bearing ore mineral was enhanced in the order of physical oxidation leaching, physical/non-adaptive bio-oxidation-leaching and physical/adaptive biological leaching. It suggests that the bio-oxidation-leaching using microbes adapted in tellurium-bearing ore mineral can be used as a pre-treatment and a main process in a recovery process of valuable metals. "This research was supported by Basic Science Research Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education(NRF-2013R1A1A2004898)"

ELECTROCHEMICAL STUDY OF RHENIUM-TELLURIUM-COPPER SYSTEM

OpenAIRE

E.A.Salakhova*1, D.B.Tagiyev2, P.E.Kalantarova3 and A.M.Askerova4

2017-01-01

The formation of the triple alloys Re-Te-Cu on the platinum electrode at volt amperemetric cycling has been studied. The investigation was carried out from chloride acidic solution containing tellurium acid, potassium perrhenate, chloride copper. The kinetics of the processes was controlled using the measurements by the method of cyclic volt-amperometry on the device İVİUMSTAT. For the analysis of composition and structure the methods of XRD (X-ray diffraction analysis) were used, and the inv...

Metal Contacts to Gallium Arsenide.

Science.gov (United States)

Ren, Fan

1991-07-01

While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.

Acousto-optic measurements of ultrasound attenuation in tellurium dioxide crystal

International Nuclear Information System (INIS)

Voloshinov, V. B.; Lemyaskina, E. A.

1996-01-01

The paper is devoted to experimental investigation of ultrasound propagation in tellurium dioxide monocrystal. In particular, attenuation of slow shear acoustic modes in the crystal was measured. The measurements were performed by acousto-optic methods using probing of acoustic column by a laser beam. The paper describes measurements of acoustic attenuation coefficient for slow shear ultrasonic waves propagating at an angle =4.5 O with respect to the (110) direction in the (110) plane. The investigation was made at acoustic frequency f = 100 MHz with pulsed acoustic waves and with an optical beam of a He-Ne laser. It is found that the attenuation coefficient is α = 0.57 cm -1 ± 15 %. The attenuation at acoustic frequencies f ≥ 100 MHz influences performance characteristics of acousto-optical devices based on tellurium dioxide. As proved, spectral resolution of a quasicollinear acoustooptic filter decreases by a factor of 2 compared to a case of the attenuation absence. (authors)

Solvent Extraction of Tellurium from Chloride Solutions Using Tri-n-butyl Phosphate: Conditions and Thermodynamic Data

Directory of Open Access Journals (Sweden)

Dongchan Li

2014-01-01

Full Text Available The extractive separation of tellurium (IV from hydrochloric acid media with tri-n-butyl phosphate (TBP in kerosene was investigated. The dependence on the extraction of tellurium species, concentrations of tellurium and TBP, extraction time and stage, organic/aqueous ratio, and interferences from coexist metallic ions were examined and are discussed. Besides, the stripping agent and stripping time were also studied. It was found that the extraction reaction corresponds to the neutral complex formation mechanism and the extracted species is TeCl4·3TBP and that the extraction process is exothermic. The thermodynamic parameters of enthalpy ΔH, entropy ΔS, and free energy ΔG of the extraction process were evaluated at −26.2 kJ·mol−1, −65.6 J·mol−1·K−1, and −7.0 kJ·mol−1, respectively at 293 K.

Copper Tellurium Oxides - A Playground for Magnetism.

Energy Technology Data Exchange (ETDEWEB)

Norman, M. R.

2018-04-15

A variety of copper tellurium oxide minerals are known, and many of them exhibit either unusual forms of magnetism, or potentially novel spin liquid behavior. Here, I review a number of the more interesting materials with a focus on their crystalline symmetry and, if known, the nature of their magnetism. Many of these exist (so far) in mineral form only, and most have yet to have their magnetic properties studied. This means a largely unexplored space of materials awaits our exploration.

Liquid-liquid extraction of arsenic, antimony, selenium and tellurium by zinc diethyldithiocarbamate

International Nuclear Information System (INIS)

Bajo, S.; Wyttenbach, A.

1978-03-01

The authors report the solvent extraction, oxidation, reduction, extraction in the presence of iron, and reextraction of arsenic, antimony, selenium and tellurium. These processes were studied using radioactive tracers. (G.T.H.)

First example of a high-level correlated calculation of the indirect spin-spin coupling constants involving tellurium

DEFF Research Database (Denmark)

Rusakov, Yury Yu; Krivdin, Leonid B.; Østerstrøm, Freja From

2013-01-01

This paper documents a very first example of a high-level correlated calculation of spin-spin coupling constants involving tellurium taking into account relativistic effects, vibrational corrections and solvent effects for the medium sized organotellurium molecules. The 125Te-1H spin-spin coupling...... constants of tellurophene and divinyl telluride were calculated at the SOPPA and DFT levels in a good agreement with experiment. A new full-electron basis set av3z-J for tellurium derived from the "relativistic" Dyall's basis set, dyall.av3z, and specifically optimized for the correlated calculations...... of spin-spin coupling constants involving tellurium, was developed. The SOPPA methods show much better performance as compared to 15 those of DFT, if relativistic effects calculated within the ZORA scheme are taken into account. Vibrational and solvent corrections are next to negligible, while...

Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

Science.gov (United States)

Francis, R. W.; Betz, F. E.

1985-01-01

The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

A Magnetic Resonance Force Microscopy Quantum Computer with Tellurium Donors in Silicon

OpenAIRE

Berman, G. P.; Doolen, G. D.; Tsifrinovich, V. I.

2000-01-01

We propose a magnetic resonance force microscopy (MRFM)-based nuclear spin quantum computer using tellurium impurities in silicon. This approach to quantum computing combines the well-developed silicon technology with expected advances in MRFM.

Subnanosecond pulse measurements of 10.6 μm radiation with tellurium

NARCIS (Netherlands)

Haselhoff, E.H.; Bonnie, R.J.M.; Ernst, G.J.; Witteman, W.J.

1988-01-01

Subnanosecond infrared pulses have been measured by noncollinear secondharmonic generation in tellurium. The method is very practical because due to the high refractive index the fine tuning of the phase matching is easily obtained by rotating the crystal around the optic axis.

Lattice parameters guide superconductivity in iron-arsenides

Science.gov (United States)

Konzen, Lance M. N.; Sefat, Athena S.

2017-03-01

The discovery of superconducting materials has led to their use in technological marvels such as magnetic-field sensors in MRI machines, powerful research magnets, short transmission cables, and high-speed trains. Despite such applications, the uses of superconductors are not widespread because they function much below room-temperature, hence the costly cooling. Since the discovery of Cu- and Fe-based high-temperature superconductors (HTS), much intense effort has tried to explain and understand the superconducting phenomenon. While no exact explanations are given, several trends are reported in relation to the materials basis in magnetism and spin excitations. In fact, most HTS have antiferromagnetic undoped ‘parent’ materials that undergo a superconducting transition upon small chemical substitutions in them. As it is currently unclear which ‘dopants’ can favor superconductivity, this manuscript investigates crystal structure changes upon chemical substitutions, to find clues in lattice parameters for the superconducting occurrence. We review the chemical substitution effects on the crystal lattice of iron-arsenide-based crystals (2008 to present). We note that (a) HTS compounds have nearly tetragonal structures with a-lattice parameter close to 4 Å, and (b) superconductivity can depend strongly on the c-lattice parameter changes with chemical substitution. For example, a decrease in c-lattice parameter is required to induce ‘in-plane’ superconductivity. The review of lattice parameter trends in iron-arsenides presented here should guide synthesis of new materials and provoke theoretical input, giving clues for HTS.

Flotation concentration for tellurium determination in industrial sewage

International Nuclear Information System (INIS)

Skripchuk, V.G.; Bormotova, L.V.; Lukoyanova, L.P.; Tret'yakova, M.I.

1983-01-01

Combination of the flotation of tellurium (4) precipitate with papaverine toluene and extraction-photometric determination of Te with butylrhodamine C allows one to determine 0.002-0.1 mg Te/l without its preliminary precipitation. Accompanying elements found in non-ferrous metallurgy sewage have no effect upon it. The duration of analysis of 10 samples is 1 to 1.5 h. Relative error is 12%. The method is introduced at the ''Uralelektromed'' plant

Magnetic resonance force microscopy quantum computer with tellurium donors in silicon.

Science.gov (United States)

Berman, G P; Doolen, G D; Hammel, P C; Tsifrinovich, V I

2001-03-26

We propose a magnetic resonance force microscopy (MRFM)-based nuclear spin quantum computer using tellurium impurities in silicon. This approach to quantum computing combines well-developed silicon technology and expected advances in MRFM. Our proposal does not use electrostatic gates to realize quantum logic operations.

Magnetic Resonance Force Microscopy Quantum Computer with Tellurium Donors in Silicon

International Nuclear Information System (INIS)

Berman, G. P.; Doolen, G. D.; Hammel, P. C.; Tsifrinovich, V. I.

2001-01-01

We propose a magnetic resonance force microscopy (MRFM)-based nuclear spin quantum computer using tellurium impurities in silicon. This approach to quantum computing combines well-developed silicon technology and expected advances in MRFM. Our proposal does not use electrostatic gates to realize quantum logic operations

Determination of half life of tellurium isotopes: a proposal for the teaching of nuclear physics

International Nuclear Information System (INIS)

Ruivo, Julio C.; Zamboni, Cibele B.; Batista, Wagner F.

2013-01-01

This work aimed at the development of courseware for teaching nuclear physics, using experimental data of half-life measurement (T1/2) of Tellurium isotopes (A=127 and 131). The choice of Tellurium was established for providing nuclear data, which are fundamental in related investigations of nuclear structure and its use in various areas such as geochemistry, chemical and pharmaceutical industries, astrophysics etc. For evaluation of the proposal performance, the material was made available, bringing a lot of information about nuclear safety, production and storage of radioactive material and concepts of radioactive decay, subatomic particles, emission of gamma radiation, half-life, etc.

Determination of half life of tellurium isotopes: a proposal for the teaching of nuclear physics

Energy Technology Data Exchange (ETDEWEB)

Ruivo, Julio C.; Zamboni, Cibele B.; Batista, Wagner F., E-mail: julio.ruivo.costa@usp.br, E-mail: czamboni@ipen.br, E-mail: fisicawagner@gmail.com [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

2013-07-01

This work aimed at the development of courseware for teaching nuclear physics, using experimental data of half-life measurement (T1/2) of Tellurium isotopes (A=127 and 131). The choice of Tellurium was established for providing nuclear data, which are fundamental in related investigations of nuclear structure and its use in various areas such as geochemistry, chemical and pharmaceutical industries, astrophysics etc. For evaluation of the proposal performance, the material was made available, bringing a lot of information about nuclear safety, production and storage of radioactive material and concepts of radioactive decay, subatomic particles, emission of gamma radiation, half-life, etc.

Properties of gallium arsenide alloyed with Ge and Se by irradiation in nuclear reactor thermal column

International Nuclear Information System (INIS)

Kolin, N.G.; Osvenskij, V.B.; Tokarevskij, V.V.; Kharchenko, V.A.; Ievlev, S.M.

1985-01-01

Dependences of electrophysical properties as well as lattice unit spacing and density of nuclear-alloyed gallium arsenide on the fluence of reactor neutrons and heat treatment are investigated. Neutron radiation of gallium arsenide with different energy spectra is shown to differently affect material properties. Fast neutrons make the main contribution to defect formation. Concentration of compensating acceptor defects formed under GaAs radiation in a thermal column practically equals concentration of introduced donor impurities. Radiation defects of acceptor type are not annealed in the material completely even at 900-1000 deg C

The dependence of the texture of tellurium thin films on vacuum deposition angle

International Nuclear Information System (INIS)

Cocks, F.H.; Peterson, M.J.; Jones, P.L.

1980-01-01

Vacuum-deposited tellurium thin films can show substantially different surface morphologies depending on the angle with which the vapor stream impinges on the substrate surface. These tellurium thin films have a tendency to grow as acicular crystallites but as the deposition angle is increased so that the vapor stream becomes tangential to the substrate surface the spacing between crystallites increases and approaches, at stream angles of approximately 80 0 from the normal, dimensions roughly once or twice the average wavelength of visible light. Such films may have application in solar energy collector systems because of the high absorptivity of sunlight shown by such films. Mechanisms which describe the tendency for crystallite spacing to increase with increasing angle are discussed. (Auth.)

High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.

1991-11-01

Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

Large-scale synthesis of Tellurium nanostructures via galvanic displacement of metals

Science.gov (United States)

Kok, Kuan-Ying; Choo, Thye-Foo; Ubaidah Saidin, Nur; Rahman, Che Zuraini Che Ab

2018-01-01

Tellurium (Te) is an attractive semiconductor material for a wide range of applications in various functional devices including, radiation dosimeters, optical storage materials, thermoelectric or piezoelectric generators. In this work, large scale synthesis of tellurium (Te) nanostructures have been successfully carried out in different concentrations of aqueous solutions containing TeO2 and NaOH, by galvanic displacements of Zn and Al which served as the sacrificial materials. Galvanic displacement process is cost-effective and it requires no template or surfactant for the synthesis of nanostructures. By varying the concentrations of TeO2 and NaOH, etching temperatures and etching times, Te nanostructures of various forms of nanostructures were successfully obtained, ranging from one-dimensional needles and rod-like structures to more complex hierarchical structures. Microscopy examinations on the nanostructures obtained have shown that both the diameters and lengths of the Te nanostructures increased with increasing etching temperature and etching time.

Iodine-129 in thyroids and tellurium isotopes in meteorites by neutron activation analysis

International Nuclear Information System (INIS)

Ballad, R.V.

1978-06-01

A combination of neutron activation and mass spectrometry has been used to determine the concentration of fissiogenic 129 I and the value of the 129 I/ 127 I ratio in thyroids of man, cow, and deer from Missouri. Deer thyroids show an average value of 129 I/ 127 I = 1.8 x 10 -8 and an average concentration of 3 x 10 -3 pCi 129 I per gram of thyroid (wet weight). Thyroids of cows and humans show successively lower values for the 129 I/ 127 I ratio and the 129 I content because their diets dilute fission-produced 129 I in the natural iodine cycle with mineral iodine. The results of analyses on a few thyroids from other geographic areas are also reported. The isotopic compositions of tellurium, krypton, and xenon were determined in acid-resistant residues of the Allende meteorite. Neutron activation and γ-counting were used to determine the relative abundances of six tellurium isotopes, and mass spectrometry was used to determine the isotopic compositions of krypton and xenon in aliquots of the same residues. Nucleogenetic anomalies were observed in the isotopic compositions of these three elements. The presence of isotopically distinct components of tellurium, krypton, and xenon in these residues provides strong support for the suggestion that our solar system formed directly from the debris of a supernova

Liquid phase epitaxy of gallium arsenide - a review

International Nuclear Information System (INIS)

Alexiev, D.; Edmondson, M.; Butcher, K.S.A.; Tansley, T.

1992-07-01

Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

Noise suppression and long-range exchange coupling for gallium arsenide spin qubits

DEFF Research Database (Denmark)

Malinowski, Filip

This thesis presents the results of the experimental study performed on spin qubits realized in gate-defined gallium arsenide quantum dots, with the focus on noise suppression and long-distance coupling. First, we show that the susceptibility to charge noise can be reduced by reducing the gradien...

Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

Energy Technology Data Exchange (ETDEWEB)

Zheng, Zhuang-hao [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Fan, Ping, E-mail: fanping308@126.com [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Luo, Jing-ting [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Cai, Xing-min; Liang, Guang-xing; Zhang, Dong-ping [College of Physics Science and Technology, Shenzhen University, 518060 (China); Ye, Fan [Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China)

2014-07-01

Bismuth antimony tellurium is one of the most important tellurium-based materials for high-efficient thermoelectric application. In this paper, ion beam sputtering was used to deposit Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films on borosilicate substrates at room-temperature. Then the bismuth antimony tellurium thin films were synthesized via post thermal treatment of the Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films. The effect of annealing temperature and compositions on the thermoelectric properties of the thin films was investigated. After the thin films were annealed from 150 °C to 350 °C for 1 h in the high vacuum condition, the Seebeck coefficient changed from a negative sign to a positive sign. The X-ray diffraction results showed that the synthesized tellurium-based thermoelectric thin film exhibited various alloys phases, which contributed different thermoelectricity conductivity to the synthesized thin film. The overall Seebeck coefficient of the synthesized thin film changed from negative sign to positive sign, which was due to the change of the primary phase of the tellurium-based materials at different annealing conditions. Similarly, the thermoelectric properties of the films were also associated with the grown phase. High-quality thin film with the Seebeck coefficient of 240 μV K{sup −1} and the power factor of 2.67 × 10{sup −3} Wm{sup −1} K{sup −2} showed a single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase when the Sb/Te thin film sputtering time was 40 min. - Highlights: • Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thermoelectric thin films synthesized via bilayer annealing • The film has single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase with best thermoelectric performance. • The film has high thermoelectric properties comparable with other best results.

THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

Directory of Open Access Journals (Sweden)

Mustafa TEMİZ

1996-02-01

Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

Equilibrium state of delta-phase with tellurium in the Sb-Bi-Te system

International Nuclear Information System (INIS)

Gajgukova, V.S.; Dudkin, L.D.; Erofeev, R.S.; Musaelyan, V.V.; Nadzhip, A.Eh.; Sokolov, O.B.

1978-01-01

A research has been carried out with a view to establish the equilibrium state of delta-phase of the composition (Sbsub(1-x)Bisub(x)) 2 Te 3 with tellurium, depending on x and temperature. The Hall effect, the thermoelectromotive force, and the electric conductivity of the samples of Sb-Bi-Te alloys have been measured, the samples being annealed at various temperatures (550 to 250 deg C). The measurement results have shown that as the Bi 2 Te 3 content in the solid solutions increases and temperature decreases, the delta-phase-Te boundary monotonously approaches the stoichiometric composition. Using the research carrid out as the basis, the general character of the equilibrium delta-phase with tellurium boundary has been rendered more precise in Sb-Bi-Te system, depending on the temperature and Bi content (up to 25 at.%)

GALVANIC MAGNETIC PROPERTIES OF BISMUTH THIN FILMS DOPED WITH TELLURIUM MADE BY THERMAL VACUUM EVAPORATION

Directory of Open Access Journals (Sweden)

V. A. Komarov

2013-01-01

Full Text Available The influence of n-type impurity of tellurium (concentration range from 0.005 atomic % Te to 0.15 atomic % Te on galvanic magnetic properties (resistivity, magnetic resistance and Hall constant of Bi thin films with various thicknesses was studied. The properties were measured in temperature range from 77 to 300 K. It was established that the classical size effect in the films is significant and decreases with higher concentration of Te impurity. The analysis of experimental results was carried out in approximation of the law of Jones-Schoenberg dispersion for Bi films doped with tellurium. Calculation of concentration and mobility of charge carriers in the studied films was made.

Hydrogen-assisted post-growth substitution of tellurium into molybdenum disulfide monolayers with tunable compositions

Science.gov (United States)

Yin, Guoli; Zhu, Dancheng; Lv, Danhui; Hashemi, Arsalan; Fei, Zhen; Lin, Fang; Krasheninnikov, Arkady V.; Zhang, Ze; Komsa, Hannu-Pekka; Jin, Chuanhong

2018-04-01

Herein we report the successful doping of tellurium (Te) into molybdenum disulfide (MoS2) monolayers to form MoS2x Te2(1-x) alloy with variable compositions via a hydrogen-assisted post-growth chemical vapor deposition process. It is confirmed that H2 plays an indispensable role in the Te substitution into as-grown MoS2 monolayers. Atomic-resolution transmission electron microscopy allows us to determine the lattice sites and the concentration of introduced Te atoms. At a relatively low concentration, tellurium is only substituted in the sulfur sublattice to form monolayer MoS2(1-x)Te2x alloy, while with increasing Te concentration (up to ˜27.6% achieved in this study), local regions with enriched tellurium, large structural distortions, and obvious sulfur deficiency are observed. Statistical analysis of the Te distribution indicates the random substitution. Density functional theory calculations are used to investigate the stability of the alloy structures and their electronic properties. Comparison with experimental results indicate that the samples are unstrained and the Te atoms are predominantly substituted in the top S sublattice. Importantly, such ultimately thin Janus structure of MoS2(1-x)Te2x exhibits properties that are distinct from their constituents. We believe our results will inspire further exploration of the versatile properties of asymmetric 2D TMD alloys.

Electric field fluctuations in liquid tellurium alloys a hint to bond character

NARCIS (Netherlands)

Paulick, C.A.; Brinkmann, R.; Elwenspoek, Michael Curt; von Hartrott, M.; Kiehl, M.; Maxim, P.; Quitmann, D.

1985-01-01

Atomic scale electric field fluctuations in liquid tellurium alloys are detected as they induce nuclear spin relaxation rate RQ in noble gas impurity atoms, via quadrupolar interaction. Results for Xe in liquid Ag, Ga, In, Tl, Ge, Sn---Te alloys are discussed, assuming that bonding in these alloys

Vaporization studies on elemental tellurium and selenium by Knudsen effusion mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

Viswanathan, R., E-mail: rvis1953@gmail.com; Balasubramanian, R., E-mail: rbs@igcar.gov.in; Darwin Albert Raj, D., E-mail: darwinalbertraj1953@gmail.com; Sai Baba, M., E-mail: msb@igcar.gov.in; Lakshmi Narasimhan, T.S., E-mail: tslak@igcar.gov.in

2014-08-01

Highlights: • A detailed KEMS study of vaporization of elemental tellurium and selenium systems. • Clusters Te{sub i}(g) (i = 2 to 7) and Se{sub i}(g) (i = 2 to 9) identified over Te(s) and Se(s). • p–T relations for Te{sub i}(g) (590 to 690 K) and Se{sub i}(g) (380 to 480 K). • Vapor phase of Te dominated by Te{sub 2}(g) (∼95%) while that of Se by Se{sub 6}(g) (∼50%) and Se{sub 5}(g) (∼25%). • Sublimation and atomization enthalpies deduced for Te{sub i}(g) and Se{sub i}(g). - Abstract: Vaporization studies on elemental tellurium and selenium were conducted by Knudsen effusion mass spectrometry in the temperature range of 590–690 K and 380–480 K, respectively. The ionic species Te{sub i}{sup +} (i = 1–7) and Se{sub i}{sup +}(g) (i = 1–9) were detected in the mass spectra over these two condensed phases. Measurement of ion intensities were performed as a function of electron impact energy and as a function of temperature (at different electron impact energies) for identifying the gaseous precursor species as well as for determining the partial pressure–temperature relations and sublimation enthalpies for these species. While the major species over elemental tellurium was confirmed to be Te{sub 2}(g) (with all other gaseous species Te{sub 3}–Te{sub 7} put together constituting less than 5%), the major species over elemental selenium was found to be Se{sub 6}(g), closely followed by Se{sub 5}(g) (with other gaseous species Se{sub 2}–Se{sub 4} and Se{sub 7}–Se{sub 9} put together also moderately constituting ∼25%). From the partial pressures, the thermodynamic data for the sublimation reactions i Te(s) = Te{sub i}(g) and i Se(s) = Se{sub i}(g) were deduced by second- and third-law methods. The atomization enthalpies of tellurium and selenium clusters were also deduced by using the recommended enthalpies of formation of monomeric species. Comparison of the findings obtained in the present study with those in previous studies revealed

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

Science.gov (United States)

Mishina, H.; Buckley, D. H.

1984-01-01

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

Starting material radiation source for Moessbauer investigations of tellurium compounds

International Nuclear Information System (INIS)

Alexandrov, A.J.; Grushko, J.S.; Makarov, E.F.; Mishin, K.Y.; Baltrunas, D.A.J.

1977-01-01

A method is described of preparing a radiation source for Mossbauer investigations of tellurium compounds manufactured on the basis of 5 MgO . Te 124 O 3 . 5 MgO . Te 124 O 3 is irradiated in a reactor by means of thermal neutrons, followed by annealing at a temperature ranging from 600 0 to 1,100 0 C for a period of from 5 to 10 hours

Anomalous tensoelectric effects in gallium arsenide tunnel diodes

Energy Technology Data Exchange (ETDEWEB)

Alekseeva, Z.M.; Vyatkin, A.P.; Krivorotov, N.P.; Shchegol' , A.A.

1988-02-01

Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

Synthesis of ultra-thin tellurium nanoflakes on textiles for high-performance flexible and wearable nanogenerators

Energy Technology Data Exchange (ETDEWEB)

He, Wen; Van Ngoc, Huynh; Qian, Yong Teng; Hwang, Jae Seok; Yan, Ya Ping [Department of Physics and Interdisciplinary Course of Physics and Chemistry, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do (Korea, Republic of); Choi, Hongsoo [Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 711-873, Daegu (Korea, Republic of); Kang, Dae Joon, E-mail: djkang@skku.edu [Department of Physics and Interdisciplinary Course of Physics and Chemistry, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do (Korea, Republic of)

2017-01-15

Highlights: • Ultra-thin tellurium (Te) nanoflakes were successfully grown on textile and used as an active piezoelectric material. • Te nanoflake nanogenerator device was systematically studied by bending and compressing test. • The ultra-high output power during compressing test can light up 10 LEDs without any external power source. • The device can offer a breakthrough in applying tellurium nanoflakes into high-performance flexible and wearable piezoelectric nanogenerator. - Abstract: We report that ultra-thin tellurium (Te) nanoflakes were successfully grown on a sample of a gold-coated textile, which then was used as an active piezoelectric material. An output voltage of 4 V and a current of 300 nA were obtained from the bending test under a driving frequency of 10 Hz. To test the practical applications, Te nanoflake nanogenerator (TFNG) device was attached to the subject’s arm, and mechanical energy was converted to electrical energy by means of periodic arm-bending motions. The optimized open-circuit voltage and short-circuit current density of approximately 125 V and 17 μA/cm{sup 2}, respectively, were observed when a TFNG device underwent a compression test with a compressive force of 8 N and driving frequency of 10 Hz. This high-power generation enabled the instantaneous powering of 10 green light-emitting diodes that shone without any assistance from an external power source.

Catalytic activity of oxide cerium-molybdenum-tellurium catalysts in oxidation ammonolysis

International Nuclear Information System (INIS)

Dzhordano, N.; Bart, D.; Madzhori, R.

1984-01-01

A commercial catalyst containing a mixture of Ce-, Mo-, Te oxides deposited on SiO 2 is shown to manifest a high efficiency in oxidative ammonolysis of propylene (C 3 - ) to acrylonitrile (AN). The dependence of the catalytic properties on the catalyst composition and reaction conditions is studied. It is established that three-component mixtures are more active and selective than the systems with a lesser number of components. Using the catalyst with the optimum ratio of constituent oxides in a microreactor at 440 deg enabled one to achieve initial selectivity in terms of AN equal to 82.5% at 97% conversion of C 3 - . Acrolein, acetonitrile, HCN and nitrogen oxides are the reaction by-products. A supposition is made that the reaction proceeds via the formation of π-compleXes on the centres of Te(4). Setective oxidation occurs on oxygen atoms bonded with the Mo(6) ions. Tellurium enhances the molybdenum reducibleness due to delocalization of electrons, whereas the cerium addition to the mixture of tellurium- and molybdenum oxides increases the rate of molybdenum reoxidation and thus enhances the catalytic system stability

Macroscopic diffusion models for precipitation in crystalline gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Kimmerle, Sven-Joachim Wolfgang

2009-09-21

Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

International Nuclear Information System (INIS)

Tong, L.; Larsson, J.A.; Nolan, M.; Murtagh, M.; Greer, J.C.; Barbe, M.; Bailly, F.; Chevallier, J.; Silvestre, F.S.; Loridant-Bernard, D.; Constant, E.; Constant, F.M.

2002-01-01

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga -H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As -H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds

Pulsed electron-beam annealing of selenium-implanted gallium arsenide

International Nuclear Information System (INIS)

Inada, T.; Tokunaga, K.; Taka, S.

1979-01-01

Electrical properties of selenium-implanted gallium arsenide annealed by a single shot of high-power pulsed electron beams have been investigated by differential Hall-effect and sheet-resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron-beam annealing at an incident energy density of 1.2 J/cm 2 , independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2--3 x 10 19 /cm 3 , which is difficult to realize by conventional thermal annealing

Determination of spins and radioactive widths of tellurium nuclear levels with capturre gamma rays

International Nuclear Information System (INIS)

Bianchini, F.G.

1973-01-01

Spins and levels widths of the tellurium, mainly 128 Te and 130 Te, were determinated by gamma spectroscopy. Measurements of inelastic and elastic scattering, angular distribution and scattering temperature dependence, were still made. Energy levels of this isotopes, were also determinated [pt

Selenium and tellurium nanomaterials

Science.gov (United States)

Piacenza, Elena; Presentato, Alessandro; Zonaro, Emanuele; Lampis, Silvia; Vallini, Giovanni; Turner, Raymond J.

2018-04-01

Over the last 40 years, the rapid and exponential growth of nanotechnology led to the development of various synthesis methodologies to generate nanomaterials different in size, shape and composition to be applied in various fields. In particular, nanostructures composed of Selenium (Se) or Tellurium (Te) have attracted increasing interest, due to their intermediate nature between metallic and non-metallic elements, being defined as metalloids. Indeed, this key shared feature of Se and Te allows us the use of their compounds in a variety of applications fields, such as for manufacturing photocells, photographic exposure meters, piezoelectric devices, and thermoelectric materials, to name a few. Considering also that the chemical-physical properties of elements result to be much more emphasized when they are assembled at the nanoscale range, huge efforts have been made to develop highly effective synthesis methods to generate Se- or Te-nanomaterials. In this context, the present book chapter will explore the most used chemical and/or physical methods exploited to generate different morphologies of metalloid-nanostructures, focusing also the attention on the major advantages, drawbacks as well as the safety related to these synthetic procedures.

Deposition of tellurium films by decomposition of electrochemically-generated H{sub 2}Te: application to radiative cooling devices

Energy Technology Data Exchange (ETDEWEB)

Engelhard, T.; Jones, E.D.; Viney, I. [Coventry Univ. (United Kingdom). Centre for Data Storage Mater.; Mastai, Y.; Hodes, G. [Department of Materials and Interfaces, Weizmann Institute of Science, 76100, Rehovot (Israel)

2000-07-17

The preparation of homogenous, large area thin layers of tellurium on thin polyethylene foils is described. The tellurium was formed by room temperature decomposition of electrochemically generated H{sub 2}Te. Pre-treatment of the polyethylene substrates with KMnO{sub 4} to give a Mn-oxide layer was found to improve the Te adhesion and homogeneity. Optical characterization of the layers was performed using UV/VIS/NIR spectroscopy. Such coatings have favorable characteristics for use as solar radiation shields in radiative cooling devices. The simplicity of generation of the very unstable H{sub 2}Te was also exploited to demonstrate formation of size-quantized CdTe nanocrystals. (orig.)

Detection of spin-states in Mn-doped gallium arsenide films

International Nuclear Information System (INIS)

Hofer, Werner A; Palotas, Krisztian; Teobaldi, Gilberto; Sadowski, Janusz; Mikkelsen, Anders; Lundgren, Edvin

2007-01-01

We show that isolated magnetic dipoles centred at the position of manganese impurities in a gallium arsenide lattice lead to spin polarized states in the bandgap of the III-V semiconductor. Spectroscopy simulations with a tungsten tip agree well with experimental data; in this case, no difference can be observed for the two magnetic groundstates. But if the signal is read with a magnetic iron tip, it changes by a factor of up to 20, depending on the magnetic orientation of the Mn atom

NMR spectroscopy of organic compounds of selenium and tellurium. Communication 8. Constants of spin-spin interaction of /sup 125/Te-/sup 1/o/sup 3/C in nmr spectra of unsaturated organtellurides

Energy Technology Data Exchange (ETDEWEB)

Kalabin, G.A.; Kushnarev, D.F.; Valeev, R.B. (Irkutskij Gosudarstvennyj Univ. (USSR))

1981-06-01

On the basis of /sup 13/C NMR spectra of a series of unsaturated and aromatic tellurium compounds the constants of spin-spin interaction (SSIC) (sup(1.2)J(Te, C)) are measured. A reliable linear relation between /sup 1/J(Te, C) and s-character of a carbon orbitale forming bond with tellurium is found. Correlation of straight SSIC of carbon with selenium and tellurium in isological compounds is established.

A new tellurium-containing amphiphilic molecule induces apoptosis in HCT116 colon cancer cells.

Science.gov (United States)

Du, Peng; Saidu, Nathaniel Edward Bennett; Intemann, Johanna; Jacob, Claus; Montenarh, Mathias

2014-06-01

Chalcogen-based redox modulators over the years have attracted considerable attention as anti-cancer agents. New selenium- and tellurium-containing compounds with a polar head group and aryl-groups of various lengths have recently been reported as biologically active in several organisms. In the present study, we used the most active of the tellurium compound DP41, and its selenium counterpart DP31 to investigate their effects on the human cancer cell line HCT116. Cells were treated with DP41 or DP31 and the formation of superoxide radicals was determined using dihydroethidium. Cell cycle analysis and apoptosis was determined by cytofluorimetry. Proteins involved in ER signaling and apoptosis were determined by Western blot analysis and fluorescence microscopy. With 50μM of DP41, we observed an increase in O2(-) formation. There was, however, no such increase in O2(-) after treatment with the corresponding selenium compound under the same conditions. In the case of DP41, the production of O2(-) radicals was followed by an up-regulation of Nrf2, HO-1, phospho-eIF2α and ATF4. CHOP was also induced and cells entered apoptosis. Unlike the cancer cells, normal retinal epithelial ARPE-19 cells did not produce elevated levels of O2(-) radicals nor did they induce the ER signaling pathway or apoptosis. The tellurium-containing compound DP41, in contrast to the corresponding selenium compound, induces O2(-) radical formation and oxidative and ER stress responses, including CHOP activation and finally apoptosis. These results indicate that DP41 is a redox modulating agent with promising anti-cancer potentials. Copyright © 2014 Elsevier B.V. All rights reserved.

Continuous removal and recovery of tellurium in an upflow anaerobic granular sludge bed reactor

International Nuclear Information System (INIS)

Mal, Joyabrata; Nancharaiah, Yarlagadda V.; Maheshwari, Neeraj; Hullebusch, Eric D. van; Lens, Piet N.L.

2017-01-01

Highlights: • Tellurite bioreduction coupled to recovery of biogenic Te(0) nanocrystals. • First report on continuous tellurite removal in a UASB reactor. • Biogenic Te(0) was mainly associated with loosely-bound EPS of granular sludge. • Repeated exposure to tellurite caused compositional changes in the EPS matrix. - Abstract: Continuous removal of tellurite (TeO 3 2− ) from synthetic wastewater and subsequent recovery in the form of elemental tellurium was studied in an upflow anaerobic granular sludge bed (UASB) reactor operated at 30 °C. The UASB reactor was inoculated with anaerobic granular sludge and fed with lactate as carbon source and electron donor at an organic loading rate of 0.6 g COD L −1 d −1 . After establishing efficient and stable COD removal, the reactor was fed with 10 mg TeO 3 2− L −1 for 42 d before increasing the influent concentration to 20 mg TeO 3 2− L −1 . Tellurite removal (98 and 92%, respectively, from 10 and 20 mg Te L −1 ) was primarily mediated through bioreduction and most of the removed Te was retained in the bioreactor. Characterization using XRD, Raman spectroscopy, SEM-EDX and TEM confirmed association of tellurium with the granular sludge, typically in the form of elemental Te(0) deposits. Furthermore, application of an extracellular polymeric substances (EPS) extraction method to the tellurite reducing sludge recovered up to 78% of the tellurium retained in the granular sludge. This study demonstrates for the first time the application of a UASB reactor for continuous tellurite removal from tellurite-containing wastewater coupled to elemental Te(0) recovery.

Synthesis and structure of aromatic and heterocyclic compounds of tellurium

International Nuclear Information System (INIS)

Sadekov, I.D.; Maksimenko, A.A.; Rivkin, B.B.

1983-01-01

A new universal method of preparing assymmetric and symmetric diaryl-tellurium chlorides and-dibromides, based on the interaction of diarylditellurides with cations of aryl-diazonium in the presence of copper (2) halogenides is developed. High yields of diaryltellium dihalogenices (60-90 de %), the possibility of the a wide variation of the nature of substituents in both components make this reaction one of the most general methods of preparing assymmetric diaryltellurium dihalogenides. It is advisable to use aryldiazonium boron fluorides instead of halogenides in this reaction

Characterization of tellurium-based films for NO2 detection

International Nuclear Information System (INIS)

Tsiulyanu, D.; Tsiulyanu, A.; Liess, H.-D.; Eisele, I.

2005-01-01

Sensing characteristics of tellurium-based thin films for NO 2 monitoring was studied systematically. The influence of contact materials, thermal treatment, temperature and thickness of the samples on the electrical conductivity and sensitivity to NO 2 with respect to scanning electron microscopy analyses is given. The possibility is shown to optimize the properties of the films for the development of a simple and stable NO 2 sensor device with rapid response/recovery time and low operating temperature. The sensing mechanism is discussed for the direct interaction of gaseous species with lone-pair electrons of chalcogen atoms

Testing of gallium arsenide solar cells on the CRRES vehicle

International Nuclear Information System (INIS)

Trumble, T.M.

1985-01-01

A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage

Tellurium adsorption on tungsten and molybdenum field emitters

International Nuclear Information System (INIS)

Collins, R.A.; Kiwanga, C.A.

1977-01-01

Studies of the adsorption of tellurium onto tungsten and molybdenum field emitters are described and the results obtained are compared with those obtained in previous work on the adsorption of silicon and selenium. The adsorption of Te onto W was found to be much more uniform than in the case of Se. Although Te is metallic in many of its properties its adsorptive behavior on field emitters is found to be similar to that of selenium and these adsorptive properties are basically common to all semiconductors. The most evident property of these adsorbates is that the work function and emission current decrease simultaneously at coverages of less than half a monolayer and the work function subsequently increases. (B.D.)

Microbial-assisted synthesis and evaluation the cytotoxic effect of tellurium nanorods

Energy Technology Data Exchange (ETDEWEB)

Forootanfar, Hamid [Herbal and Traditional Medicines Research Center, Kerman University of Medical Sciences, Kerman (Iran, Islamic Republic of); Amirpour-Rostami, Sahar; Jafari, Mandana [Pharmaceutics Research Center, Institute of Neuropharmacology, Kerman University of Medical Sciences, Kerman (Iran, Islamic Republic of); Forootanfar, Amir [Department of Pharmacology and Toxicology, Faculty of Pharmacy, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Yousefizadeh, Zahra [The Student Research Committee, Faculty of Pharmacy, Kerman University of Medical Sciences, Kerman (Iran, Islamic Republic of); Shakibaie, Mojtaba, E-mail: shakiba@kmu.ac.ir [Pharmaceutics Research Center, Institute of Neuropharmacology, Kerman University of Medical Sciences, Kerman (Iran, Islamic Republic of)

2015-04-01

The present study was designed to isolate bacterial strain capable of tellurium nanorods' (Te NRs) production followed by purification and evaluation of the cytotoxic effect of Te NRs. Among 25 environmental samples collected for screening of Te NR-producer bacterial strains one bacterial colony (isolated from hot spring and identified as Pseudomonas pseudoalcaligenes strain Te) was selected and applied for biosynthesis of Te NRs. Thereafter, an organic–aqueous partitioning system was applied for the purification of the biogenic Te NRs and the purified Te NRs were characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray (EDX), X-ray diffraction spectroscopy (XRD), UV–visible spectroscopy, and Fourier transform infrared spectroscopy (FTIR) techniques. The cytotoxic effect of biologically synthesized Te NRs and potassium tellurite on four cell lines of MCF-7, HT1080, HepG2 and A549 was then determined using the MTT assay method. The obtained results revealed lower toxicity for the rod-shaped biogenic tellurium nanostructures (~ 22 nm diameter by 185 nm length) compared to K{sub 2}TeO{sub 3}. - Highlights: • Te NR producing bacterial strain were isolated from hot springs. • Organic–aqueous partitioning system was applied for purification of Te nanorods. • The rod-shaped biogenic Te NPs showed lower cytotoxicity compared to K{sub 2}TeO{sub 3}.

Microbial-assisted synthesis and evaluation the cytotoxic effect of tellurium nanorods

International Nuclear Information System (INIS)

Forootanfar, Hamid; Amirpour-Rostami, Sahar; Jafari, Mandana; Forootanfar, Amir; Yousefizadeh, Zahra; Shakibaie, Mojtaba

2015-01-01

The present study was designed to isolate bacterial strain capable of tellurium nanorods' (Te NRs) production followed by purification and evaluation of the cytotoxic effect of Te NRs. Among 25 environmental samples collected for screening of Te NR-producer bacterial strains one bacterial colony (isolated from hot spring and identified as Pseudomonas pseudoalcaligenes strain Te) was selected and applied for biosynthesis of Te NRs. Thereafter, an organic–aqueous partitioning system was applied for the purification of the biogenic Te NRs and the purified Te NRs were characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray (EDX), X-ray diffraction spectroscopy (XRD), UV–visible spectroscopy, and Fourier transform infrared spectroscopy (FTIR) techniques. The cytotoxic effect of biologically synthesized Te NRs and potassium tellurite on four cell lines of MCF-7, HT1080, HepG2 and A549 was then determined using the MTT assay method. The obtained results revealed lower toxicity for the rod-shaped biogenic tellurium nanostructures (~ 22 nm diameter by 185 nm length) compared to K 2 TeO 3 . - Highlights: • Te NR producing bacterial strain were isolated from hot springs. • Organic–aqueous partitioning system was applied for purification of Te nanorods. • The rod-shaped biogenic Te NPs showed lower cytotoxicity compared to K 2 TeO 3

Continuous removal and recovery of tellurium in an upflow anaerobic granular sludge bed reactor

Energy Technology Data Exchange (ETDEWEB)

Mal, Joyabrata, E-mail: joyabrata2006@gmail.com [UNESCO-IHE, Westvest 7, 2611 AX Delft (Netherlands); Nancharaiah, Yarlagadda V. [Biofouling and Biofilm Processes Section, Water and Steam Chemistry Division, Bhabha Atomic Research Centre, Kalpakkam, 603102, Tamil Nadu (India); Homi Bhabha National Institute, Anushakti Nagar Complex, Mumbai 400094 (India); Maheshwari, Neeraj [CNRS UMR 7338, BMBI University de Technologie Compiegne, 60200 Compiegne (France); Hullebusch, Eric D. van [UNESCO-IHE, Westvest 7, 2611 AX Delft (Netherlands); Université Paris-Est, Laboratoire Géomatériaux et Environnement (LGE), EA 4508, UPEM, 77454, Marne-la-Vallée (France); Lens, Piet N.L. [UNESCO-IHE, Westvest 7, 2611 AX Delft (Netherlands); Department of Chemistry and Bioengineering, Tampere University of Technology, P.O-Box 541, Tampere (Finland)

2017-04-05

Highlights: • Tellurite bioreduction coupled to recovery of biogenic Te(0) nanocrystals. • First report on continuous tellurite removal in a UASB reactor. • Biogenic Te(0) was mainly associated with loosely-bound EPS of granular sludge. • Repeated exposure to tellurite caused compositional changes in the EPS matrix. - Abstract: Continuous removal of tellurite (TeO{sub 3}{sup 2−}) from synthetic wastewater and subsequent recovery in the form of elemental tellurium was studied in an upflow anaerobic granular sludge bed (UASB) reactor operated at 30 °C. The UASB reactor was inoculated with anaerobic granular sludge and fed with lactate as carbon source and electron donor at an organic loading rate of 0.6 g COD L{sup −1} d{sup −1}. After establishing efficient and stable COD removal, the reactor was fed with 10 mg TeO{sub 3}{sup 2−} L{sup −1} for 42 d before increasing the influent concentration to 20 mg TeO{sub 3}{sup 2−} L{sup −1}. Tellurite removal (98 and 92%, respectively, from 10 and 20 mg Te L{sup −1}) was primarily mediated through bioreduction and most of the removed Te was retained in the bioreactor. Characterization using XRD, Raman spectroscopy, SEM-EDX and TEM confirmed association of tellurium with the granular sludge, typically in the form of elemental Te(0) deposits. Furthermore, application of an extracellular polymeric substances (EPS) extraction method to the tellurite reducing sludge recovered up to 78% of the tellurium retained in the granular sludge. This study demonstrates for the first time the application of a UASB reactor for continuous tellurite removal from tellurite-containing wastewater coupled to elemental Te(0) recovery.

Surface studies on graphite furnace platforms covered with Pd, Rh and Ir as modifiers in graphite furnace atomic absorption spectrometry of tellurium

Energy Technology Data Exchange (ETDEWEB)

Pedro, Juana [Area de Química Analítica, Departamento de Química, Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829 (S3000GL.N), Santa Fe (Argentina); Stripekis, Jorge [Laboratorio de Análisis de Trazas, Departamento de Química Inorgánica, Analítica y Química Física, INQUIMAE, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria (1428), Buenos Aires (Argentina); Departamento de Ingeniería Química, Instituto Tecnológico de Buenos Aires, Av. Eduardo Madero 399 (1106), Buenos Aires (Argentina); Bonivardi, Adrian [Area de Química Analítica, Departamento de Química, Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829 (S3000GL.N), Santa Fe (Argentina); Tudino, Mabel, E-mail: tudino@qi.fcen.uba.ar [Laboratorio de Análisis de Trazas, Departamento de Química Inorgánica, Analítica y Química Física, INQUIMAE, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria (1428), Buenos Aires (Argentina)

2015-05-01

The main objective of this work is the study of correlations between the efficiency of the distribution of the permanent platinum group modifiers Pd, Rh and Ir over the graphite surface with the aim of improving analytical signal of tellurium. Modifier solution was deposited onto the platform and pyrolysed after drying. In the case of Pd, the physical vaporization/deposition technique was also tested. In order to analyze the differences amongst coverings (morphology, topology and distribution), the graphite surfaces were studied with scanning electron microscopy and energy dispersive X-ray microscopy. Micrographs for physical vaporization and pyrolytic deposition of Pd were also analyzed in order to explain the lack of signal obtained for tellurium with the first alternative. Similar micrographs were obtained for pyrolytic deposition of Ir and Rh and then, compared to those of Pd. Ir showed the most homogeneous distribution on the graphite surface and the tallest and sharpest transient. With the aim of improving the analytical signal of tellurium, the correlation between the surface studies and the tellurium transient signal (height, area and shape) is discussed. - Highlights: • Distribution of Rh, Pd and Ir onto graphite furnaces is evaluated by SEM and EDX • Micrographs and spectra showed that surface distribution could influence Te signal. • Ir showed the best signal together with the most homogeneous surface distribution. • Pd-PVD micrographs revealed the absence of graphite and no signal for Te.

Tellurium labeled analogues of the fatty acid hexadecenoic acid for imaging of myocardial tissue

International Nuclear Information System (INIS)

Mills, S.L.

1980-01-01

Non-invasive nuclear diagnostic procedures for the evaluation of acute myocardial infarction and ischemia are currently limited by problems associated with the availablity of radiopharmaceuticals, development of imaging equipment, and inherent characteristics of radionuclides. Myocardial tissue requires high levels of substrates which provide energy for the continuous functioning of this vital organ. Of the major sources of energy, the most utilized source is fatty acids. Tellurium-123m, with excellent gamma imaging characteristics was chosen as the radionuclide. A 16 carbon fatty acid, hexadecenoic acid, was chosen as the carrier molecule. The tellurium-123m fatty acid radiopharmaceuticals were formulated either in a solution of 20 percent ethanol, two percent polysorbate 80, and brought to volume with normal saline or in 12.5 percent human serum ablumin and brought to volume with normal saline. Biodistribution was performed in three animal species: Sprague-Dawley rats (three rats per time frame), Australian white rabbits (three rabbits per time frame), and mongrel dogs (one dog per time frame). Dosimetry calculations were performed to assess the radiation dose

Tellurium quantum dots: Preparation and optical properties

Science.gov (United States)

Lu, Chaoyu; Li, Xueming; Tang, Libin; Lai, Sin Ki; Rogée, Lukas; Teng, Kar Seng; Qian, Fuli; Zhou, Liangliang; Lau, Shu Ping

2017-08-01

Herein, we report an effective and simple method for producing Tellurium Quantum dots (TeQDs), zero-dimensional nanomaterials with great prospects for biomedical applications. Their preparation is based on the ultrasonic exfoliation of Te powder dispersed in 1-methyl-2-pyrrolidone. Sonication causes the van der Waals forces between the structural hexagons of Te to break so that the relatively coarse powder breaks down into nanoscale particles. The TeQDs have an average size of about 4 nm. UV-Vis absorption spectra of the TeQDs showed an absorption peak at 288 nm. Photoluminescence excitation (PLE) and photoluminescence (PL) are used to study the optical properties of TeQDs. Both the PLE and PL peaks revealed a linear relationship against the emission and excitation energies, respectively. TeQDs have important potential applications in biological imaging and catalysis as well as optoelectronics.

In-plane electronic anisotropy of underdoped '122' Fe-arsenide superconductors revealed by measurements of detwinned single crystals

International Nuclear Information System (INIS)

Fisher, I R; Shen, Z X; Degiorgi, L

2011-01-01

The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four-fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and angle-resolved photoemission spectroscopy measurements of detwinned single crystals of underdoped Fe-arsenide superconductors in the '122' family of compounds.

In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Fisher, Ian Randal

2012-05-08

The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

Continuous reduction of tellurite to recoverable tellurium nanoparticles using an upflow anaerobic sludge bed (UASB) reactor.

Science.gov (United States)

Ramos-Ruiz, Adriana; Sesma-Martin, Juan; Sierra-Alvarez, Reyes; Field, Jim A

2017-01-01

According to the U.S. Department of Energy and the European Union, tellurium is a critical element needed for energy and defense technology. Thus methods are needed to recover tellurium from waste streams. The objectives of this study was to determine the feasibility of utilizing upflow anaerobic sludge bed (UASB) reactors to convert toxic tellurite (Te IV ) oxyanions to non-toxic insoluble elemental tellurium (Te 0 ) nanoparticles (NP) that are amendable to separation from aqueous effluents. The reactors were supplied with ethanol as the electron donating substrate to promote the biological reduction of Te IV . One reactor was additionally amended with the redox mediating flavonoid compound, riboflavin (RF), with the goal of enhancing the bioreduction of Te IV . Its performance was compared to a control reactor lacking RF. The continuous formation of Te 0 NPs using the UASB reactors was found to be feasible and remarkably improved by the addition of RF. The presence of this flavonoid was previously shown to enhance the conversion rate of Te IV by approximately 11-fold. In this study, we demonstrated that this was associated with the added benefit of reducing the toxic impact of Te IV towards the methanogenic consortium in the UASB and thus enabled a 4.7-fold higher conversion rate of the chemical oxygen demand. Taken as a whole, this work demonstrates the potential of a methanogenic granular sludge to be applied as a bioreactor technology producing recoverable Te 0 NPs in a continuous fashion. Copyright © 2016 Elsevier Ltd. All rights reserved.

Characterization of tellurium-based films for NO{sub 2} detection

Energy Technology Data Exchange (ETDEWEB)

Tsiulyanu, D. [Technical University, Department of Physics, bul. Dacia 41, MD-2060 Kishinau (Moldova, Republic of)]. E-mail: tsiu@cni.md; Tsiulyanu, A. [Technical University, Department of Physics, bul. Dacia 41, MD-2060 Kishinau (Moldova, Republic of); Liess, H.-D. [University of the Bundeswehr Munich, Faculty of Electrical Engineering and Information Technology, Institute of Physics, D-85577 Neubiberg (Germany); Eisele, I. [University of the Bundeswehr Munich, Faculty of Electrical Engineering and Information Technology, Institute of Physics, D-85577 Neubiberg (Germany)

2005-08-01

Sensing characteristics of tellurium-based thin films for NO{sub 2} monitoring was studied systematically. The influence of contact materials, thermal treatment, temperature and thickness of the samples on the electrical conductivity and sensitivity to NO{sub 2} with respect to scanning electron microscopy analyses is given. The possibility is shown to optimize the properties of the films for the development of a simple and stable NO{sub 2} sensor device with rapid response/recovery time and low operating temperature. The sensing mechanism is discussed for the direct interaction of gaseous species with lone-pair electrons of chalcogen atoms.

Elastic properties of some transition metal arsenides

Science.gov (United States)

Nayak, Vikas; Verma, U. P.; Bisht, P. S.

2018-05-01

The elastic properties of transition metal arsenides (TMAs) have been studied by employing Wien2K package based on density functional theory in the zinc blende (ZB) and rock salt (RS) phase treating valance electron scalar relativistically. Further, we have also treated them non-relativistically to find out the relativistic effect. We have calculated the elastic properties by computing the volume conservative stress tensor for small strains, using the method developed by Charpin. The obtained results are discussed in paper. From the obtained results, it is clear that the values of C11 > C12 and C44 for all the compounds. The values of shear moduli of these compounds are also calculated. The internal parameter for these compounds shows that ZB structures of these compounds have high resistance against bond order. We find that the estimated elastic constants are in good agreement with the available data.

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

Science.gov (United States)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

2015-05-01

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, Pmax was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

International Nuclear Information System (INIS)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

2015-01-01

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P max was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs

Strong nonlinear photonic responses from microbiologically synthesized tellurium nanocomposites

Science.gov (United States)

Liao, K.-S.; Wang, Jingyuan; Dias, S.; Dewald, J.; Alley, N.J.; Baesman, S.M.; Oremland, R.S.; Blau, W.J.; Curran, S.A.

2010-01-01

A new class of nanomaterials, namely microbiologically-formed nanorods composed of elemental tellurium [Te(0)] that forms unusual nanocomposites when combined with poly(m-phenylenevinylene-co-2,5-dioctoxy-phenylenevinylene) (PmPV) is described. These bio-nanocomposites exhibit excellent broadband optical limiting at 532 and 1064 nm. Nonlinear scattering, originating from the laser induced solvent bubbles and microplasmas, is responsible for this nonlinear behavior. The use of bacterially-formed Te(0) when combined with an organic chemical host (e.g., PmPV) is a new green method of nanoparticle syntheses. This opens the possibilities of using unique, biologically synthesized materials to advance future nanoelectronic and nanophotonic applications. ?? 2009 Elsevier B.V. All rights reserved.

Extraction-spectrophotometric method for silicon determination in high-purity substances. 1. Silicon determination in tellurium

Energy Technology Data Exchange (ETDEWEB)

Shaburova, V P; Yudelevich, I G [AN SSSR, Novosibirsk (USSR). Inst. Neorganicheskoj Khimii

1989-01-01

The extraction-spectrophotometric method for silicon determination in tellurium based on extraction isolation of the base by tributyl phosphate from hydrochloride solutions and with addition of HNO/sub 3/ and spectrophotometric silicon determination using malachite green is developed. The method permits to determine 2x10/sup -1/-3x10/sup -4/ % Si.

The use of masking agents in the determination, by hydride generation and atomic-absorption spectrophotometry, of arsenic, antimony, selenium, tellurium, and bismuth in the presence of noble metals

International Nuclear Information System (INIS)

Kellerman, S.P.

1982-01-01

The effectiveness of thiosemicarbazide, tellurium, and potassium iodide as masking agents to eliminate interferences was assessed. Thiosemicarbazide was found to be effective in eliminating or reducing the interferences on arsenic, antimony, and bismuth, and tellurium reduced the interferences on selenium. The interferences on tellurium could not be eliminated. Arsenic, antimony, selenium, and bismuth were determined in metal sulphide concentrates that were spiked with the noble metals (defined here as gold plus all the platinum-group metals except osmium). The relative standard deviations for arsenic, antimony, bismuth, and selenium were 0,061, 0,017, 0,029, and 0,145 respectively. The values obtained for all the analytes agreed favourably with the preferred values for two in-house reference samples. The laboratory method is detailed in an appendix

Improvement of physical properties of ZnO thin films by tellurium doping

Energy Technology Data Exchange (ETDEWEB)

Sönmezoğlu, Savaş, E-mail: svssonmezoglu@kmu.edu.tr; Akman, Erdi

2014-11-01

Highlights: • We report the synthesis of tellurium-doped zinc oxide (Te–ZnO) thin films using sol–gel method. • Highly c-axis oriented Te-doped ZnO thin films were grown on FTO glasses as substrate. • 1.5% Te-doping ratio could improve the physical properties of ZnO thin films. - Abstract: This investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te–ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level.

High performance supercapacitor and non-enzymatic hydrogen peroxide sensor based on tellurium nanoparticles

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M. Manikandan

2017-04-01

Full Text Available Tellurium nanoparticles (Te Nps were synthesized by wet chemical method and characterized by XRD, Raman, FESEM, TEM, XPS, UV–Vis and FL. The Nps were coated on graphite foil and Glassy carbon electrode to prepare the electrodes for supercapacitor and biosensor applications. The supercapacitor performance is evaluated in 2 M KOH electrolyte by both Cyclic Voltammetry (CV and galvanostatic charge-discharge method. From charge-discharge method, Te Nps show a specific capacitance of 586 F/g at 2 mA/cm2 and 100 F/g at 30 mA/cm2 as well as an excellent cycle life (100% after 1000 cycles. In addition, the H2O2 sensor performance of Te Nps modified glassy carbon electrode is checked by CV and Chronoamperometry (CA in phosphate buffer solution (PBS. In the linear range of 0.67 to 8.04 μM of hydrogen peroxide (H2O2, Te NPs show a high sensitivity of 0.83 mA mM−1 cm−2 with a correlation coefficient of 0.995. The detection limit is 0.3 μM with a response time less than 5 s. Keywords: Tellurium nanoparticles, Supercapacitor, Biosensor, Hydrogen peroxide

Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

Energy Technology Data Exchange (ETDEWEB)

Prechtel, Hans Leonhard

2011-08-15

In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

Intrinsic two-dimensional states on the pristine surface of tellurium

Science.gov (United States)

Li, Pengke; Appelbaum, Ian

2018-05-01

Atomic chains configured in a helical geometry have fascinating properties, including phases hosting localized bound states in their electronic structure. We show how the zero-dimensional state—bound to the edge of a single one-dimensional helical chain of tellurium atoms—evolves into two-dimensional bands on the c -axis surface of the three-dimensional trigonal bulk. We give an effective Hamiltonian description of its dispersion in k space by exploiting confinement to a virtual bilayer, and elaborate on the diminished role of spin-orbit coupling. These intrinsic gap-penetrating surface bands were neglected in the interpretation of seminal experiments, where two-dimensional transport was otherwise attributed to extrinsic accumulation layers.

Tellurium Enrichment in Jurassic Coal, Brora, Scotland

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Liam Bullock

2017-11-01

Full Text Available Mid-Jurassic pyritic coals exposed at the village of Brora, northern Scotland, UK, contain a marked enrichment of tellurium (Te relative to crustal mean, average world coal compositions and British Isles Carboniferous coals. The Te content of Brora coal pyrite is more than one order of magnitude higher than in sampled pyrite of Carboniferous coals. The Te enrichment coincides with selenium (Se and mercury (Hg enrichment in the rims of pyrite, and Se/Te is much lower than in pyrites of Carboniferous coals. Initial pyrite formation is attributed to early burial (syn-diagenesis, with incorporation of Te, Se, Hg and lead (Pb during later pyrite formation. The source of Te may have been a local hydrothermal system which was responsible for alluvial gold (Au in the region, with some Au in Brora headwaters occurring as tellurides. Anomalous Te is not ubiquitous in coal, but may occur locally, and is detectable by laser ablation inductively coupled plasma-mass spectrometry (LA-ICP-MS.

Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation.

Science.gov (United States)

Xiong, Yucheng; Tang, Hao; Wang, Xiaomeng; Zhao, Yang; Fu, Qiang; Yang, Juekuan; Xu, Dongyan

2017-10-16

In this work, we experimentally investigated the effect of sulfur passivation on thermal transport in indium arsenide (InAs) nanowires. Our measurement results show that thermal conductivity can be enhanced by a ratio up to 159% by sulfur passivation. Current-voltage (I-V) measurements were performed on both unpassivated and S-passivated InAs nanowires to understand the mechanism of thermal conductivity enhancement. We observed a remarkable improvement in electrical conductivity upon sulfur passivation and a significant contribution of electrons to thermal conductivity, which account for the enhanced thermal conductivity of the S-passivated InAs nanowires.

Effect of tellurium on viscosity and liquid structure of GaSb melts

Energy Technology Data Exchange (ETDEWEB)

Ji Leilei [School of Material Science and Engineering, Jinan University, Jinan 250022 (China); Geng Haoran [School of Material Science and Engineering, Jinan University, Jinan 250022 (China)], E-mail: mse_genghr@ujn.edu.cn; Sun Chunjing [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Jinan 250061 (China); Teng Xinying; Liu Yamei [School of Material Science and Engineering, Jinan University, Jinan 250022 (China)

2008-04-03

The behavior of GaSb melt with tellurium addition was investigated using viscometer and differential scanning calorimetry (DSC). Normally, the viscosity of all melts measured decreased with the increasing temperature. However, anomalous transition points were observed in the temperature dependence of viscosity for Ga-Sb-Te system. Corresponded with the abnormal points on the viscosity-temperature curves, there were thermal effect peaks on the DSC curves. Furthermore, viscous activation energy and flow units of these melts and their structural features were discussed in this paper.

Ecological aspects of selenium and tellurium in human and animal health

Energy Technology Data Exchange (ETDEWEB)

Frost, D V; Ingvoldstad, D

1975-01-01

Animal and human studies indicate that selenium inadequacy, in part, underlies various chronic diseases. Epidemiologic evidence suggests that cancer and heart disease are most common where ambient Se availability is low. Plant Se uptake and Se blood levels are inverse to human cancer mortality. As the active group in glutathione peroxidase, Se/sup -2/ inhibits aberrant oxidations which lead to chronic diseases. It binds heavy metals, and with tocopherol maintains tissue integrity. Sulfur dioxide fallout from the atmosphere, resulting from fossil fuel burning, may diminish the nutritional availability of selenium by diminishing plant uptake. Intensive ruminant grazing returns unavailable Se/sup 0/ to soils. Trimethyl selenium ion, as excreted by animals, also appears to be unavailable to plants. Modern fertilization practices and the effect of buildup of sulfates in the soil, due to acid rains, both appear to lessen the availability of Se to plants. SeO/sub 2/ added to the atmosphere from combustion and volcanic activity react with SO/sub 2/ to yield Se/sup 0/. This is presumed to fall out as particles from the air. How traces of Se are otherwise carried in air, explaining its enrichment in some areas, is unknown. The New Zealand experience with Se inadequacy in animals and man may be repeated in other parts of the world. Se inadequacy is far more of a human health problem than Se toxicity. There are no known adverse health effects from tellurium, other than tellurium breath. 164 references, 5 figures, 3 tables.

Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

DEFF Research Database (Denmark)

Fiore, A.; Oesterle, U.; Stanley, R.P.

2001-01-01

We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

Synthesis of Novel E-2-Chlorovinyltellurium Compounds Based on the Stereospecific Anti-addition of Tellurium Tetrachloride to Acetylene

Directory of Open Access Journals (Sweden)

Svetlana V. Amosova

2012-05-01

Full Text Available The reaction of tellurium tetrachloride with acetylene proceeds in a stereospecific anti-addition manner to afford the novel products E-2-chlorovinyltellurium trichloride and E,E-bis(2-chlorovinyltellurium dichloride. Reaction conditions for the selective preparation of each of these products were found. The latter was obtained in 90% yield in CHCl₃ under a pressure of acetylene of 10–15 atm, whereas the former product was formed in up to 72% yield in CCl₄ under a pressure of acetylene of 1–3 atm. Synthesis of the previously unknown E,E-bis(2-chlorovinyl telluride, E,E-bis(2-chlorovinyl ditelluride, E-2-chlorovinyl 1,2,2-trichloroethyl telluride and E,E-bis(2-chlorovinyl-tellurium dibromide is described.

The application of three-phase liquid-liquid extraction to the analysis of bismuth and tellurium in sulphide concentrates

International Nuclear Information System (INIS)

Nicholas, D.J.

1976-01-01

An extraction system consisting of one aqueous and two organic phases is described. Diantipyrylmethane (DAM) is used as the extractant for bismuth and tellurium, which are extracted into the smaller of the two organic phases from nitric acid and perchloric acid respectively. The extraction efficiency is in the range of 90 to 95 per cent, compensation for incomplete extraction being made by the technique of standard addition. Copper, lead, and zinc are not extracted in either procedure. When the solutions contain high concentrations of iron, thioglycolic acid is used as a masking agent for iron in the extraction of bismuth. Atomic-absorption spectrophotometry is used for the analysis of the third phase after it has been diluted with methanol. The precision for bismuth and tellurium is in the range of 3 to 4 per cent. The accuracy, as ascertained from comparative analyses of sulphide concentrates, is good

Tellurium stable isotope fractionation in chondritic meteorites and some terrestrial samples

Science.gov (United States)

Fehr, Manuela A.; Hammond, Samantha J.; Parkinson, Ian J.

2018-02-01

New methodologies employing a 125Te-128Te double-spike were developed and applied to obtain high precision mass-dependent tellurium stable isotope data for chondritic meteorites and some terrestrial samples by multiple-collector inductively coupled plasma mass spectrometry. Analyses of standard solutions produce Te stable isotope data with a long-term reproducibility (2SD) of 0.064‰ for δ130/125Te. Carbonaceous and enstatite chondrites display a range in δ130/125Te of 0.9‰ (0.2‰ amu-1) in their Te stable isotope signature, whereas ordinary chondrites present larger Te stable isotope fractionation, in particular for unequilibrated ordinary chondrites, with an overall variation of 6.3‰ for δ130/125Te (1.3‰ amu-1). Tellurium stable isotope variations in ordinary chondrites display no correlation with Te contents or metamorphic grade. The large Te stable isotope fractionation in ordinary chondrites is likely caused by evaporation and condensation processes during metamorphism in the meteorite parent bodies, as has been suggested for other moderately and highly volatile elements displaying similar isotope fractionation. Alternatively, they might represent a nebular signature or could have been produced during chondrule formation. Enstatite chondrites display slightly more negative δ130/125Te compared to carbonaceous chondrites and equilibrated ordinary chondrites. Small differences in the Te stable isotope composition are also present within carbonaceous chondrites and increase in the order CV-CO-CM-CI. These Te isotope variations within carbonaceous chondrites may be due to mixing of components that have distinct Te isotope signatures reflecting Te stable isotope fractionation in the early solar system or on the parent bodies and potentially small so-far unresolvable nucleosynthetic isotope anomalies of up to 0.27‰. The Te stable isotope data of carbonaceous and enstatite chondrites displays a general correlation with the oxidation state and hence might

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

Energy Technology Data Exchange (ETDEWEB)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

2015-05-15

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

The influence of composition of fluoride electrolytes and conditions of the electrodeposition on some properties of tellurium

International Nuclear Information System (INIS)

Bugelis, V.M.; Kum, G.N.; Abrarov, O.A.; Madumarov, A.; Navalikhin, L.V.; Ajnakulov, Eh.B.

1981-01-01

Effect of electrolytic bath content, cathode current density, illumination and temperature on specific resistance, photosensitivity, structure and chemical purity of plated tellurium coatings is studied. Deposition is realized from moderately acid fluoride electrolytes at the constant temperature with a platinum working electrode. X-ray studies of precipitates obtained are carried out

Synchrotron white beam topographic studies of gallium arsenide crystals

International Nuclear Information System (INIS)

Wierzchowski, W.; Wieteska, K.; Graeff, W.

1997-01-01

A series of samples cut out from different types of gallium arsenide crystals with low dislocation density were studied by means of white beam synchrotron topography. The investigation was performed with transmission and black-reflection projection methods and transmission section method. Some of topographs in transmission geometry provided a very high sensitivity suitable for revealing small precipitates. The transmission section images significantly differed depending on the wavelength and absorption. In some cases a distinct Pendelloesung fringes and fine details of dislocation and precipitates images were observed. It was possible to reproduce the character of these images by means of numerical simulation based on integration of Takagi-Taupin equations. Due to more convenient choice of radiation, synchrotron back-reflection projection topography provided much better visibility of dislocations than analogous realized with conventional X-ray sources. (author)

Evaluated phase diagrams of binary metal-tellurium systems of the D-block transition elements

International Nuclear Information System (INIS)

Chattopadhyay, G.; Bharadwaj, S.R.

1989-01-01

The binary phase diagrams of metal-tellurium systems for twenty seven d-block transition elements have been critically evaluated. Complete phase diagrams are presented for the elements, chromium, manganese, iron, cobalt, nickel, copper, molybdenum, palladium, silver, lanthanum, platinum and gold, whereas, for scandium, titanium, vanadium, yttrium, zirconium, niobium, technitium, ruthenium, rhodium, hafnium, tantalum, tungsten , rhenium, osmium and iridium, the phase diagrams are incomplete and tentative. (author). 20 refs., 27 tabs., 27 figs

Spin Injection in Indium Arsenide

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Mark eJohnson

2015-08-01

Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

Thermodynamic assessment of the palladium-tellurium (Pd-Te) system

International Nuclear Information System (INIS)

Gosse, S.; Gueneau, C.

2011-01-01

Among the fission products formed in nuclear fuels, the platinum-group metal palladium and the chalcogen element tellurium exhibit strong interaction. It is therefore of interest to be able to predict the chemical equilibria involving the Pd and Te fission products. A thermodynamic assessment is carried out using the Calphad (Calculation of Phase Diagram) method to investigate the behaviour of Pd-Te alloy system in nuclear fuels under irradiation and under waste disposal conditions. The Pd-Te binary description was optimized using experimental data found in literature including thermodynamic properties and phase diagram data. To validate the calculated phase diagram and thermodynamic properties, the results are compared with data from the literature. Both calculated and experimental phase diagrams and thermodynamic properties are in good agreement in the whole Pd-Te composition range. (authors)

Investigation of evaporation characteristics of polonium and its lighter homologues selenium and tellurium from liquid Pb-Bi-eutecticum

CERN Document Server

Neuhausen, J; Eichler, B

2004-01-01

The evaporation behaviour of polonium and its lighter homologues selenium and tellurium dissolved in liquid Pb-Bi-eutecticum (LBE) has been studied at various temperatures in the range from 482 K up to 1330 K under Ar/H2 and Ar/H2O-atmospheres using γ-ray spectroscopy. Polonium release in the temperature range of interest for technical applications is slow. Within short term (1h) experiments measurable amounts of polonium are evaporated only at temperatures above 973 K. Long term experiments reveal that a slow evaporation of polonium occurs at temperatures around 873 K resulting in a fractional polonium loss of the melt around 1% per day. Evaporation rates of selenium and tellurium are smaller than those of polonium. The presence of H2O does not enhance the evaporation within the error limits of our experiments. The thermodynamics and possible reaction pathways involved in polonium release from LBE are discussed.

Effect of sample preparation methods on photometric determination of the tellurium and cobalt content in the samples of copper concentrates

Directory of Open Access Journals (Sweden)

Viktoriya Butenko

2016-03-01

Full Text Available Methods of determination of cobalt and nickel in copper concentrates currently used in factory laboratories are very labor intensive and time consuming. The limiting stage of the analysis is preliminary chemical sample preparation. Carrying out the decomposition process of industrial samples with concentrated mineral acids in open systems does not allow to improve the metrological characteristics of the methods, for this reason improvement the methods of sample preparation is quite relevant and has a practical interest. The work was dedicated to the determination of the optimal conditions of preliminary chemical preparation of copper concentrate samples for the subsequent determination of cobalt and tellurium in the obtained solution using tellurium-spectrophotometric method. Decomposition of the samples was carried out by acid dissolving in individual mineral acids and their mixtures by heating in an open system as well as by using ultrasonification and microwave radiation in a closed system. In order to select the optimal conditions for the decomposition of the samples in a closed system the phase contact time and ultrasonic generator’s power were varied. Intensification of the processes of decomposition of copper concentrates with nitric acid (1:1, ultrasound and microwave radiation allowed to transfer quantitatively cobalt and tellurium into solution spending 20 and 30 min respectively. This reduced the amount of reactants used and improved the accuracy of determination by running the process in strictly identical conditions.

LIGHT INDUCED TELLURIUM ENRICHMENT ON CDZNTE CRYSTAL SURFACES DETECTED BY RAMAN SPECTROSCOPY

International Nuclear Information System (INIS)

Hawkins, S; Eliel Villa-Aleman, E; Martine Duff, M; Douglas Hunter, D

2007-01-01

Synthetic CdZnTe or 'CZT' crystals can be grown under controlled conditions to produce high quality crystals to be used as room temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro Raman spectroscopy. The growth of Te rich areas on the surface was induced by low powered lasers. The growth was observed versus time with low power Raman scattering and was observed immediately under higher power conditions. The detector response was also measured after induced Te enrichment

Equilibrium evaporation test of lead-bismuth eutectic and of tellurium in lead-bismuth

International Nuclear Information System (INIS)

Ohno, Shuji; Nishimura, Masahiro; Hamada, Hirotsugu; Miyahara, Shinya; Sasa, Toshinobu; Kurata, Yuji

2005-01-01

A series of equilibrium evaporation experiment was performed to acquire the essential and the fundamental knowledge about the transfer behavior of lead-bismuth eutectic (LBE) and impurity tellurium in LBE from liquid to gas phase. The experiments were conducted using the transpiration method in which saturated vapor in an isothermal evaporation pot was transported by inert carrier gas and collected outside of the pot. The size of the used evaporation pot is 8 cm inner diameter and 15 cm length. The weight of the LBE pool in the pot is about 500 g. The investigated temperature range was 450degC to 750degC. From this experiment and discussion using the data in literature, we have obtained several instructive and useful data on the LBE evaporation behavior such as saturated vapor pressure of LBE, vapor concentration of Pb, Bi and Bi 2 in LBE saturated gas phase, and activity coefficient of Pb in the LBE. The LBE vapor pressure equation is represented as the sum of Pb, Bi and Bi 2 vapor in the temperature range between 550degC and 750degC as logP[Pa]=10.2-10100/T[k]. The gas-liquid equilibrium partition coefficient of tellurium in LBE is in the range of 10 to 100, with no remarkable temperature dependency between 450degC and 750degC. This research was founded by the Ministry of Education, Culture, Sports, Science and Technology (MEXT). (author)

Site preference of rare earth doping in palladium-iron-arsenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Stuerzer, Christine; Schulz, Anne; Johrendt, Dirk [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany)

2014-12-15

The solid solutions (Ca{sub 1-y}RE{sub y}Fe{sub 1-x}Pd{sub x}As){sub 10}Pd{sub z}As{sub 8} with RE = La, Ce, and Pr were synthesized by solid state methods and characterized by X-ray powder diffraction with subsequent Rietveld refinements [(CaFeAs){sub 10}Pt{sub 3}As{sub 8}-type structure (''1038 type''), P anti 1, Z = 1]. Substitution levels (Ca/RE, Fe/Pd, and Pd/□) obtained from Rietveld refinements coincide well with the nominal values according to EDS and the linear courses of the lattice parameters as expected from the ionic radii. The RE atoms favor the one out of five calcium sites, which is eightfold coordinated by arsenic. This leads to significant stabilization of the structure, and especially prevents palladium over-doping in the iron-arsenide layers as observed in the pristine compound (CaFe{sub 1-x}Pd{sub x}As){sub 10}Pd{sub z}As{sub 8}. While the stabilization energy is estimated to about 40 kJ.mol{sup -1} by electronic structure calculations, the reason for the diminished Fe/Pd substitution through RE doping is still not yet understood. We suggest that the electrons transferred from RE{sup 3+} to the (Fe{sub 1-x}Pd{sub x})As layer makes higher palladium concentrations unfavorable. Anyway the reduced palladium doping enables superconductivity with critical temperatures up to 20 K (onset) in the RE doped Pd1038 samples, which could not be obtained earlier due to palladium over-doping in the active iron-arsenide layers. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Facile Hydrothermal Synthesis of Tellurium Nanostructures for Solar Cells

Directory of Open Access Journals (Sweden)

M. Panahi-Kalamuei

2014-10-01

Full Text Available Tellurium (Te nanostructures have been successfully synthesized via a simple hydrothermal methodfrom the reaction of a TeCl4 aqueous solution with thioglycolic acid (TGA as a reductant. TGA can be easily oxidized to the corresponding disulfide [SCH2CO2H]2, which in turn can reduce TeCl4 to Te. The obtained Te was characterized by XRD, SEM, EDS, and DRS. The effect of reducing agent on morphology and size of the products were also studied. Additionally, Te thin film was deposited on the FTO-TiO2 by Dr- blading then employed to solar cell application and measured open circuit voltage (Voc, short circuit current (Isc, and fill factor (FF were determined as well. The studies showed that particle morphology and sizes play crucial role on solar cell efficiencies.

Determination of gold, indium, tellurium and thallium in the same sample digest of geological materials by atomic-absorption spectroscopy and two-step solvent extraction

Science.gov (United States)

Hubert, A.E.; Chao, T.T.

1985-01-01

A rock, soil, or stream-sediment sample is decomposed with hydrofluoric acid, aqua regia, and hydrobromic acid-bromine solution. Gold, thallium, indium and tellurium are separated and concentrated from the sample digest by a two-step MIBK extraction at two concentrations of hydrobromic add. Gold and thallium are first extracted from 0.1M hydrobromic acid medium, then indium and tellurium are extracted from 3M hydrobromic acid in the presence of ascorbic acid to eliminate iron interference. The elements are then determined by flame atomic-absorption spectrophotometry. The two-step solvent extraction can also be used in conjunction with electrothermal atomic-absorption methods to lower the detection limits for all four metals in geological materials. ?? 1985.

Evaluation of the Content of Antimony, Arsenic, Bismuth, Selenium, Tellurium and Their Inorganic Forms in Commercially Baby Foods.

Science.gov (United States)

Ruiz-de-Cenzano, M; Rochina-Marco, A; Cervera, M L; de la Guardia, M

2017-12-01

Baby foods, from the Spanish market and prepared from meat, fish, vegetables, cereals, legumes, and fruits, were analyzed to obtain the concentration of antimony (Sb), arsenic (As), bismuth (Bi), and tellurium (Te) as toxic elements and selenium (Se) as essential element. An analytical procedure was employed based on atomic fluorescence spectroscopy which allowed to obtain accurate data at low levels of concentration. Values of 14 commercial samples, expressed in nanograms per gram fresh weight, ranged for Sb 0.66-6.9, As 4.5-242, Te 1.35-2.94, Bi 2.18-4.79, and Se 5.4-109. Additionally, speciation studies were performed based on data from a non-chromatographic screening method. It was concluded that tellurium and bismuth were mainly present as inorganic forms and selenium as organic form, and antimony and arsenic species depend on the ingredients of each baby food. Risk assessment considerations were made by comparing dietary intake of the aforementioned elements through the consumption of one baby food portion a day and recommended or tolerable guideline values.

Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

International Nuclear Information System (INIS)

Mih, R.; Gronsky, R.; Sterne, P.A.

1995-01-01

Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling

Energy Technology Data Exchange (ETDEWEB)

Simon, F.-G., E-mail: franz-georg.simon@bam.de [BAM Federal Institute for Materials Research and Testing, Division 4.3 Contaminant Transfer and Environmental Technologies, Unter den Eichen 87, 12205 Berlin (Germany); Holm, O.; Berger, W. [BAM Federal Institute for Materials Research and Testing, Division 4.3 Contaminant Transfer and Environmental Technologies, Unter den Eichen 87, 12205 Berlin (Germany)

2013-04-15

Highlights: ► The semiconductor layer on thin-film photovoltaic modules can be removed from the glass-plate by vacuum blast cleaning. ► The separation of blasting agent and semiconductor can be performed using flotation with a valuable yield of 55%. ► PV modules are a promising source for the recovery of tellurium in the future. - Abstract: Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stock and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources.

Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling

International Nuclear Information System (INIS)

Simon, F.-G.; Holm, O.; Berger, W.

2013-01-01

Highlights: ► The semiconductor layer on thin-film photovoltaic modules can be removed from the glass-plate by vacuum blast cleaning. ► The separation of blasting agent and semiconductor can be performed using flotation with a valuable yield of 55%. ► PV modules are a promising source for the recovery of tellurium in the future. - Abstract: Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stock and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources

Determination of tellurium by hydride generation with in situ trapping flame atomic absorption spectrometry

Energy Technology Data Exchange (ETDEWEB)

Matusiewicz, H.; Krawczyk, M. [Politechn Poznanska, Poznan (Poland)

2007-03-15

The analytical performance of coupled hydride generation - integrated atom trap (HG-IAT) atomizer flame atomic absorption spectrometry (FAAS) system was evaluated for determination of Te in reference material (GBW 07302 Stream Sediment), coal fly ash and garlic. Tellurium, using formation of H{sub 2}Te vapors, is atomized in air-acetylene flame-heated IAT. A new design HG-IAT-FAAS hyphenated technique that would exceed the operational capabilities of existing arrangernents (a water-cooled single silica tube, double-slotted quartz tube or an 'integrated trap') was investigated. An improvement in detection limit was achieved compared with using either of the above atom trapping techniques separately. The concentration detection limit, defined as 3 times the blank standard deviation (3{sigma}), was 0.9 ng mL{sup -1} for Te. For a 2 min in situ preconcentration time (sample volume of 2 mL), sensitivity enhancement compared to flame AAS, was 222 fold, using the hydride generation atom trapping technique. The sensitivity can be further improved by increasing the collection time. The precision, expressed as RSD, was 7.0% (n = 6) for Te. The accuracy of the method was verified using a certified reference material (GBW 07302 Stream Sediment) by aqueous standard calibration curves. The measured Te contents of the reference material was in agreement with the information value. The method was successfully applied to the determination of tellurium in coal fly ash and garlic.

Test of irradiation of tellurium oxide for obtaining iodine-131 by dry distillation

International Nuclear Information System (INIS)

Alanis M, J.

2003-07-01

With the purpose of optimizing to the maximum independently the work of the reactor of those mathematical calculations of irradiation that are already optimized, now it corresponds to carry out irradiation tests in the different positions with their respective neutron fluxes that it counts the reactor for samples irradiation. Then, it is necessary to carry out the irradiation of the tellurium dioxide through cycles, with the purpose of observing the activity that it goes accumulating in each cycle and this way to obtain an activity of the Iodine-131 obtained when finishing the last cycle. (Author)

Selenium Se and tellurium Te

International Nuclear Information System (INIS)

Busev, A.I.; Tiptsova, V.G.; Ivanov, V.M.

1978-01-01

The basic methods for determining selenium and tellurium in various objects are presented. The bichromatometric determination of Te in cadmium, zinc and mercury tellurides is based on oxidation of Te(4) to (6) in H 2 SO 4 with potassium bichromate. In steels, Te is determined photometrically with the aid of KI. The determination is hindered by Fe(3), Cu(2), Bi(3) and Se(4) ions, which must be separated. The extraction-photometric determination of Te in native sulfur is carried out with the aid of 5-mercapto-3-(naphthyl-2)-1,3,4-thiadiazolthione-2 (pH=4.8-5.0). The dyed complex is readily extracted with chloroform and benzene. The spectrophotometric determination of Te in selenium is performed with the aid of 3,5-diphenylpyrazoline-1-dithiocarbamate of sodium. Te is determined in commercial indium, arsenic and their semiconductor compounds photometrically with the aid of copper diethyldithiocarbamate. The method permits determining 5x10 -5 % Te in a weighed amount of 0.5 g. The chloride complex of Te(4) with diantipyriodolpropylmethane is quantitatively extracted with dichloroethane from hydrochloric acid solutions. Thus, any amounts of Te can be separated from Se and determined photometrically. The extraction-photometric determination of Te in commercial lead and bismuth is carried out with the aid of pyrazolone derivatives, in commercial copper with the aid of diantipyridolpropylmethane, and in ores (more than 0.01% Te) with the aid of bismuthol 2. Also described is the extraction-polarographic determination of Te in sulfide ores

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

Science.gov (United States)

Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

2017-10-01

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

Formation of defects in tellurium at various levels of gravitation

International Nuclear Information System (INIS)

Parfen'ev, R.V.; Farbshtejn, I.I.; Shul'pina, I.L.; Yakimov, S.V.; Shalimov, V.P.; Turchaninov, A.M.

2002-01-01

One investigated into effect of gravitation conditions during tellurium crystallization (ranging from microgravitation up to increased gravitation - 5g 0 ) on concentration of neutral (N D ) and electrically active (N AD ) acceptor structure defects in specimens grown both under complete remelting of parent ingot and under directed recrystallization of ingot with inoculation. N AD and N D concentrations and their distribution along the specimen depth were determined on the basis of analysis of electrical characteristics (conductivity and the Hall effect) measured along ingots within 1.6-300 K temperature range. The results were compared with characteristics of specimens grown following the similar program under normal conditions. At complete remelting under microgravitation one detected attributes of strong supercooling and spontaneous crystallization, as well as, of specimen resistance oscillation by its depth caused by N D modulation [ru

Use of Iodine-131 to Tellurium-132 Ratios for Assessing the Relationships between Human Inhaled Radioactivity and Environmental Monitoring after the Accident in Fukushima

Directory of Open Access Journals (Sweden)

Koji Uchiyama

2018-03-01

Full Text Available Significant differences in findings were seen between the intake amounts of iodine-131 that were derived from direct measurements and the estimated intake from environmental monitoring data at the Fukushima accident. To clarify these discrepancies, we have investigated the iodine-131 and tellurium-132 body burdens of five human subjects, who after being exposed to a radioactive plume, underwent 21.5 h whole body counter measurements at Fukui Prefectural Hospital, so clear intake scenario and thyroid counter measurement data were available. To determine the iodine-131 and tellurium-132 body burdens, we introduced a new method of whole body counter calibration composed of a self-consistent approach with the time-dependent correction efficiency factors concept. The ratios of iodine-131 to tellurium-132, ranging from 0.96 ± 0.05 to 2.29 ± 0.38, were consistent with results of the environmental measurements. The 24 h iodine uptake values ranging from 12.1–16.0% were within euthyroid range in Japanese people. These results suggest, even if the relatively low thyroid iodine uptake in the Japanese population was taken into consideration, that there is no doubt about the consistency between direct measurements and environmental monitoring data. Adequate intake scenario is suggested to be principally important to estimate the inhaled radioactivity in areas in or around nuclear accidents.

Exploratory studies of element substitutions in synthetic tetrahedrite. Part II. Selenium and tellurium as anions in Zn-Fe tetrahedrites

DEFF Research Database (Denmark)

Karup-Møller, Sven; Makovicky, E.

1999-01-01

-free) compositons do not materialize. The substituted Se tetrahedrite coexists with Cu3SbSe3, (iron-bearing) Cu2-xSe, Cu3SbSe4 plus/minus low Zn-sulfide melt. Selenium does not adopt the role of cation and tellurium that of anion in the tetrahedrite structure. The explanation of the severely restricted composition...

Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

Directory of Open Access Journals (Sweden)

A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

2007-01-01

Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

The effect of hydrostatic pressure on the anomalous sign reversal of the Hall coefficient in tellurium

International Nuclear Information System (INIS)

Balynas, V.; Dobrovolskis, Z.; Krotkus, A.; Hoerstel, W.

1981-01-01

In order to obtain information about the pressure behaviour of the higher lying second conduction band the dependences of the Hall coefficient of single crystalline tellurium on temperature (300 to 500 K) have been measured at atmospheric pressure and hydrostatic pressures of 500 and 800 MPa. The separation between the two conduction bands in Te decreases with increasing pressure. The anomalous sign reversal of the Hall coefficient can be well explained by a double-conduction band model

Maskless proton beam writing in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

2007-07-15

Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

Maskless proton beam writing in gallium arsenide

International Nuclear Information System (INIS)

Mistry, P.; Gomez-Morilla, I.; Smith, R.C.; Thomson, D.; Grime, G.W.; Webb, R.P.; Gwilliam, R.; Jeynes, C.; Cansell, A.; Merchant, M.; Kirkby, K.J.

2007-01-01

Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Ramon M. delos Santos

2008-06-01

Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

Revision and extension to the analysis of the third spectrum of tellurium: Te III

International Nuclear Information System (INIS)

Tauheed, A.; Naz, A.

2011-01-01

The spectrum of doubly ionized tellurium atom (Te III) has been investigated in the vacuum ultraviolet wavelength region. The ground configuration of Te III is 5s 2 5p 2 and the excited configurations are of the type 5s 2 5p nl. The core excitation leads to a 5s5p 3 configuration. Cowan's multi-configuration interaction code was utilized to predict the ion structure. The observed spectrum of tellurium was recorded on a 3-m normal incidence vacuum spectrograph of Antigonish Laboratory (Canada) in the wavelength region of 300 - 2000 A by using a triggered spark light source for the excitation of the spectrum. The 5s 2 5p 2 - [ 5s 2 5p (5d + 6d + 7d + 6s + 7s + 8s) + 5s5p 3 ] transition array has been analyzed. Previously reported levels by Joshi et al have been confirmed while the older analysis by Crooker and Joshi has been revised and extended to include the 5s 2 5p (5d, 6d, 7d, 6s,7s, 8s) and 5s5p 3 configurations. Least-squares- fitted parametric calculations were used to interpret the final results. One hundred and fifty spectral lines have been identified to establish 60 energy levels. Our wavelength accuracy for unblended and sharp lines is better than ±0.005 A. The ionization potential of Te III was found to be 224550 ± 300 cm -1 (27.841 ± 0.037eV).

Validation of a new design of tellurium dioide-irradiated target

Energy Technology Data Exchange (ETDEWEB)

Fllaoui, Aziz; Ghamad, Younes; Zoubir, Brahim; Ayaz, Zinel Abidine; El Morabiti, Aissam; Amayoud, Hafid [Centre National de l' Energie des Sciences et des Techniques Nucleaires, Rabat (Morocco); Chakir, El Mahjoub [Nuclear Physics Department, University Ibn Toufail, Kenitra (Morocco)

2016-10-15

Production of iodine-131 by neutron activation of tellurium in tellurium dioxide (TeO{sub 2}) material requires a target that meets the safety requirements. In a radiopharmaceutical production unit, a new lid for a can was designed, which permits tight sealing of the target by using tungsten inert gas welding. The leakage rate of all prepared targets was assessed using a helium mass spectrometer. The accepted leakage rate is ≤ 10 - 4 mbr.L/s, according to the approved safety report related to iodine-131 production in the TRIGA Mark II research reactor (TRIGA: Training, Research, Isotopes, General Atomics). To confirm the resistance of the new design to the irradiation conditions in the TRIGA Mark II research reactor's central thimble, a study of heat effect on the sealed targets for 7 hours in an oven was conducted and the leakage rates were evaluated. The results show that the tightness of the targets is ensured up to 600 .deg. C with the appearance of deformations on lids beyond 450 .deg. C. The study of heat transfer through the target was conducted by adopting a one-dimensional approximation, under consideration of the three transfer modes-convection, conduction, and radiation. The quantities of heat generated by gamma and neutron heating were calculated by a validated computational model for the neutronic simulation of the TRIGA Mark II research reactor using the Monte Carlo N-Particle transport code. Using the heat transfer equations according to the three modes of heat transfer, the thermal study of I-131 production by irradiation of the target in the central thimble showed that the temperatures of materials do not exceed the corresponding melting points. To validate this new design, several targets have been irradiated in the central thimble according to a preplanned irradiation program, going from 4 hours of irradiation at a power level of 0.5 MW up to 35 hours (7 h/d for 5 days a week) at 1.5 MW. The results show that the irradiated targets are

Validation of a New Design of Tellurium Dioxide-Irradiated Target

Directory of Open Access Journals (Sweden)

Aziz Fllaoui

2016-10-01

Full Text Available Production of iodine-131 by neutron activation of tellurium in tellurium dioxide (TeO2 material requires a target that meets the safety requirements. In a radiopharmaceutical production unit, a new lid for a can was designed, which permits tight sealing of the target by using tungsten inert gas welding. The leakage rate of all prepared targets was assessed using a helium mass spectrometer. The accepted leakage rate is ≤ 10−4 mbr.L/s, according to the approved safety report related to iodine-131 production in the TRIGA Mark II research reactor (TRIGA: Training, Research, Isotopes, General Atomics. To confirm the resistance of the new design to the irradiation conditions in the TRIGA Mark II research reactor's central thimble, a study of heat effect on the sealed targets for 7 hours in an oven was conducted and the leakage rates were evaluated. The results show that the tightness of the targets is ensured up to 600°C with the appearance of deformations on lids beyond 450°C. The study of heat transfer through the target was conducted by adopting a one-dimensional approximation, under consideration of the three transfer modes—convection, conduction, and radiation. The quantities of heat generated by gamma and neutron heating were calculated by a validated computational model for the neutronic simulation of the TRIGA Mark II research reactor using the Monte Carlo N-Particle transport code. Using the heat transfer equations according to the three modes of heat transfer, the thermal study of I-131 production by irradiation of the target in the central thimble showed that the temperatures of materials do not exceed the corresponding melting points. To validate this new design, several targets have been irradiated in the central thimble according to a preplanned irradiation program, going from 4 hours of irradiation at a power level of 0.5 MW up to 35 hours (7 h/d for 5 days a week at 1.5 MW. The results show that the irradiated targets are

Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy

International Nuclear Information System (INIS)

Hawkins, Samantha A.; Villa-Aleman, Eliel; Duff, Martine C.; Hunter, Doug B.; Burger, Arnold; Groza, Michael; Buliga, Vladimir; Black, David R.

2008-01-01

CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro-Raman spectroscopy. The growth of Te rich areas on the surface was induced by low-power lasers. The growth was observed versus time with low-power Raman scattering and was observed immediately under higher-power conditions. The detector response was also measured after induced Te enrichment.

Solubility of platinum-arsenide melt and sperrylite in synthetic basalt at 0.1 MPa and 1200 °C with implications for arsenic speciation and platinum sequestration in mafic igneous systems

Science.gov (United States)

Canali, A. C.; Brenan, J. M.; Sullivan, N. A.

2017-11-01

To better understand the Pt-As association in natural magmas, experiments were done at 1200 °C and 0.1 MPa to measure the solubility of Pt and Pt-arsenide phases (melt and sperrylite, PtAs2), as well as to determine the oxidation state, and identify evidence for Pt-As complexing, in molten silicate. Samples consisting of synthetic basalt contained in chromite crucibles were subject to three experimental procedures. In the first, platinum solubility in the synthetic basalt was determined without added arsenic by equilibrating the sample with a platinum source (embedded wire or bead) in a gas-mixing furnace. In the second, the sample plus a Pt-arsenide source was equilibrated in a vacuum-sealed fused quartz tube containing a solid-oxide oxygen buffer. The third approach involved two steps: first equilibrating the sample in a gas-mixing furnace, then with added arsenide melt in a sealed quartz tube. Oxygen fugacity was estimated in the latter step using chromite/melt partitioning of vanadium. Method two experiments done at high initial arsenic activity (PtAs melt + PtAs2), showed significant loss of arsenic from the sample, the result of vapour transfer to newly-formed arsenide phases in the buffer. Method three experiments showed no loss of arsenic, yielding a uniform final distribution in the sample. Analyses of run-product glasses from experiments which did not show arsenic loss reveal significant increase in arsenic concentrations with fO2, varying from ∼10 ppm (FMQ-3.25) to >10,000 ppm (FMQ + 5.5). Despite very high arsenic loadings (>1000 ppm), the solubility of Pt is similar in arsenic-bearing and arsenic-free glasses. The variation in arsenic solubility with fO2 shows a linear relationship, that when corrected for the change in the activity of dissolved arsenic with the melt ferric/ferrous ratio, yields a solubility-fO2 relationship consistent with As3+ as the dissolved species. This result is confirmed by X-ray absorption near edge structure (XANES

Tellurium rings as electron pair donors in cluster compounds and coordination polymers; Tellurringe als Elektronenpaardonoren in Clusterverbindungen und Koordinationspolymeren

Energy Technology Data Exchange (ETDEWEB)

Guenther, Anja

2011-11-08

In this dissertation novel and already known molecular tellurium rings are presented in cluster compounds and quasi-one-dimensional coordination polymers. The cyclic, homonuclear units are always stabilized by coordination to electron-rich transition metal atoms, with the coordinating tellurium atoms acting as two-electron donors. As a synthesis route, the solid-state reaction in quartz glass vials was used uniformly. In addition to structural determination, the focus was on the characterization of the resulting compounds. For this purpose, resistance measurements were carried out on selected compounds, the magnetic behavior and the thermal degradation reactions were investigated and accompanying quantum chemical calculations were carried out. [German] In dieser Dissertation werden neuartige sowie bereits bekannte molekulare Tellurringe in Clusterverbindungen und quasi-eindimensionalen Koordinationspolymeren vorgestellt. Die Stabilisierung der zyklischen, homonuklearen Einheiten erfolgt dabei stets durch die Koordination an elektronenreiche Uebergangsmetallatome, wobei die koordinierenden Telluratome gegenueber diesen als Zwei-Elektronendonoren fungieren. Als Syntheseroute wurde dabei einheitlich auf die Festkoerperreaktion in Quarzglasampullen zurueckgegriffen. Neben der Strukturaufklaerung stand die Charakterisierung der erhaltenden Verbindungen im Fokus der Arbeit. Dazu wurden an ausgewaehlten Verbindungen Widerstandsmessungen durchgefuehrt, das magnetische Verhalten sowie die thermischen Abbaureaktionen untersucht und begleitende quantenchemische Rechnungen durchgefuehrt.

Determination of tellurium at ultra-trace levels in drinking water by on-line solid phase extraction coupled to graphite furnace atomic absorption spectrometer

International Nuclear Information System (INIS)

Pedro, Juana; Stripekis, Jorge; Bonivardi, Adrian; Tudino, Mabel

2008-01-01

In this paper, two time-based flow injection (FI) separation pre-concentration systems coupled to graphite furnace atomic absorption spectrometry (GFAAS) for tellurium determination are studied and compared. The first alternative involves the pre-concentration of the analyte onto Dowex 1X8 employed as packaging material of a micro-column inserted in the flow system. The second set-up is based on the co-precipitation of tellurium with La(OH) 3 followed by retention onto XAD resins. Both systems are compared in terms of limit of detection, linear range, RSD%, sample throughput, micro-columns lifetime and aptitude for fully automatic operation. The features of the Dowex system are: 37% efficiency of retention and an enhancement factor of 42 for a pre-concentration time of 180 seconds (sample flow rate = 3 ml min -1 ) with acetic acid elution volumes of 80 μl. The detection limit (3 s) is 7 ng l -1 and the relative standard deviation (n = 7200 ng l -1 ) is 5.8%. The analytical performance of the XAD system is: 72% efficiency of retention and an enhancement factor of 25 for a pre-concentration time of 180 s (sample flow rate = 3 ml min -1 ) with nitric acid elution volumes of 300 μl. The detection limit is 66 ng l -1 and the relative standard deviation (n = 7200 ng l -1 ) is 8.3%. Applications to the determination of tellurium in tap water and the validation of the analytical methodology employing SRM 1643e as certified reference material are shown

Challenges in assessment of clean energy supply-chains based on byproduct minerals: A case study of tellurium use in thin film photovoltaics

International Nuclear Information System (INIS)

Bustamante, Michele L.; Gaustad, Gabrielle

2014-01-01

Highlights: • Byproduct mining presents unique challenges to quantifying energy security issues. • This case study shows Te scarcity is closely tied to Cu demand and production. • Material intensity changes over time have a significant impact on projections. • Recycling as a mitigation strategy is shown to have poor short-term results. - Abstract: Transitioning to a sustainable energy supply will be critical to meeting future economic and environmental goals. This transition will require optimizing and commercializing a portfolio of new clean energy technologies. However, many promising clean energy technologies are based on materials with inherent risks in their supply; these risks include scarcity, price volatility, criticality, and other potential supply-chain disruptions. Using tellurium use in CdTe photovoltaics as a case study, this paper presents analysis of some of the key challenges associated with modeling byproduct systems (a supply-chain where a key material is actually a byproduct of extraction of another material, copper in the case of tellurium). This work presents a novel modeling approach; the results of the case study are used to identify potential supply risks facing this clean technology, with a unique focus on sensitivity to changes in the preliminary lifecycle stages. Supply-chain sensitivities are connected with direct environmental impacts to frame the implications in a broader sustainability context and to emphasize the future role of recycling. Ultimately, it was shown that if historical supply and demand trends continue, supply gap conditions will emerge before the end of the current decade. However, improvements in byproduct yield, end-use recycling rate, and end-use material intensity exhibit significant leverage to minimize risk in the energy-critical tellurium supply-chain

Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures

Directory of Open Access Journals (Sweden)

Olga Korostynska

2002-08-01

Full Text Available Thin films of Tellurium dioxide (TeO2 were investigated for γ-radiation dosimetry purposes. Samples were fabricated using thin film vapour deposition technique. Thin films of TeO2 were exposed to a 60Co γ-radiation source at a dose rate of 6 Gy/min at room temperature. Absorption spectra for TeO2 films were recorded and the values of the optical band gap and energies of the localized states for as-deposited and γ-irradiated samples were calculated. It was found that the optical band gap values were decreased as the radiation dose was increased. Samples with electrical contacts having a planar structure showed a linear increase in current values with the increase in radiation dose up to a certain dose level. The observed changes in both the optical and the electrical properties suggest that TeO2 thin film may be considered as an effective material for room temperature real time γ-radiation dosimetry.

Studies on nickel (II and palladium (II complexes with some tetraazamacrocycles containing tellurium

Directory of Open Access Journals (Sweden)

Rathee Nitu

2012-01-01

Full Text Available The synthesis of 10-membered and 12-membered tellurium containing tetraazamacrocyclic complexes of divalent nickel and palladium by template condensation of diaryltellurium dichlorides, (aryl = p-hydroxyphenyl, 3-methyl-4-hydroxyphenyl, p-methoxyphenyl with 1,2-diaminoethane and 1,3-diaminopropane in the presence of metal dichloride is reported. The resulting complexes have been subjected to elemental analyses, magnetic measurements, electronic absorption, infra-red, and proton magnetic resonance spectral studies. The formation of proposed macrocyclic skeletons and their donor sites have been identified on the basis of spectral studies. Distorted octahedral structure for the nickel complexes in the solid state and squareplanar structure for the palladium complexes have been suggested.

Quantum oscillations in the parent magnetic phase of an iron arsenide high temperature superconductor

International Nuclear Information System (INIS)

Sebastian, Suchitra E; Gillett, J; Lau, P H C; Lonzarich, G G; Harrison, N; Mielke, C H; Singh, D J

2008-01-01

We report measurements of quantum oscillations in SrFe 2 As 2 -which is an antiferromagnetic parent of the iron arsenide family of superconductors-known to become superconducting under doping and the application of pressure. The magnetic field and temperature dependences of the oscillations between 20 and 55 T in the liquid helium temperature range suggest that the electronic excitations are those of a Fermi liquid. We show that the observed Fermi surface comprising small pockets is consistent with the formation of a spin-density wave. Our measurements thus demonstrate that high T c superconductivity can occur on doping or pressurizing a conventional metallic spin-density wave state. (fast track communication)

Flavoprotein-mediated tellurite reduction: structural basis and applications to the synthesis of tellurium-containing nanostructures

Directory of Open Access Journals (Sweden)

Mauricio Arenas-Salinas

2016-07-01

Full Text Available The tellurium oxyanion tellurite (TeO32- is extremely harmful for most organisms. It has been suggested that a potential bacterial tellurite resistance mechanism would consist of an enzymatic, NAD(PH-dependent, reduction to the less toxic form elemental tellurium (Te0. To date, a number of enzymes such as catalase, type II NADH dehydrogenase and terminal oxidases from the electron transport chain, nitrate reductases, and dihydrolipoamide dehydrogenase (E3, among others, have been shown to display tellurite-reducing activity. This activity is generically referred to as tellurite reductase (TR. Bioinformatic data resting on some of the abovementioned enzymes enabled the identification of common structures involved in tellurite reduction including vicinal catalytic cysteine residues and the FAD/NAD(P+-binding domain, which is characteristic of some flavoproteins. Along this line, thioredoxin reductase (TrxB, alkyl hydroperoxide reductase (AhpF, glutathione reductase (GorA, mercuric reductase (MerA, NADH: flavorubredoxin reductase (NorW, dihydrolipoamide dehydrogenase, and the putative oxidoreductase YkgC from Escherichia coli or environmental bacteria were purified and assessed for TR activity. All of them displayed in vitro TR activity at the expense of NADH or NADPH oxidation. In general, optimal reducing conditions occurred around pH 9-10 and 37 °C.Enzymes exhibiting strong TR activity produced Te-containing nanostructures (TeNS. While GorA and AhpF generated TeNS of 75 nm average diameter, E3 and YkgC produced larger structures (> 100 nm. Electron-dense structures were observed in cells over-expressing genes encoding TrxB, GorA and YkgC.

Tracing Tellurium and Its Nanostructures in Biology.

Science.gov (United States)

Zare, Bijan; Nami, Mohammad; Shahverdi, Ahmad-Reza

2017-12-01

Tellurium (Te) is a semimetal rare element in nature. Together with oxygen, sulfur (S), and selenium (Se), Te is considered a member of chalcogen group. Over recent decades, Te applications continued to emerge in different fields including metallurgy, glass industry, electronics, and applied chemical industries. Along these lines, Te has recently attracted research attention in various fields. Though Te exists in biologic organisms such as microbes, yeast, and human body, its importance and role and some of its potential implications have long been ignored. Some promising applications of Te using its inorganic and organic derivatives including novel Te nanostructures are being introduced. Before discovery and straightforward availability of antibiotics, Te had considered and had been used as an antibacterial element. Antilishmaniasis, antiinflammatory, antiatherosclerotic, and immuno-modulating properties of Te have been described for many years, while the innovative applications of Te have started to emerge along with nanotechnological advances over the recent years. Te quantum dots (QDs) and related nanostructures have proposed novel applications in the biological detection systems such as biosensors. In addition, Te nanostructures are used in labeling, imaging, and targeted drug delivery systems and are tested for antibacterial or antifungal properties. In addition, Te nanoparticles show novel lipid-lowering, antioxidant, and free radical scavenging properties. This review presents an overview on the novel forms of Te, their potential applications, as well as related toxicity profiles.

Influence of the hydrolysis conditions on the properties of tellurium coatings obtained from hydrochloric acid baths

International Nuclear Information System (INIS)

Bigelis, V.M.; Kim, G.N.; Navalikhin, L.V.; Kalanov, M.; Abrarov, O.A.

1982-01-01

The structure of tellurium coatings has been studied using the methods of activational analysis on fast neutrons, roentgenography using DRON-2. The study is carried out in electrolyte 1N TeO 2 +6NHCl+2NH 2 SO 4 at the temperatures 25 and 95 deg C in the range of current densities 10-150 mA/cm 2 with and without mixing. Atomic content of chlorine and oxygen in deposite depending on the electrolyte work is determined. Nicrohardness, density, specific resistance of the coatings investigated are determined

Near threshold electron impact ionization cross section for tellurium atoms

International Nuclear Information System (INIS)

Chipev, F.F.; Chernyshova, I.V.; Kontros, J.E.; Shpenik, O.B.

2004-01-01

Full text: Up today electron-impact ionization is one of the most intensively investigated processes in atomic and molecular physics [1]. These experiments however, are associated with difficulties: high temperatures and densities are required to produce atomic beams and monochromatic intensive electron beams. A crossed electron and atomic beams scattering geometry was employed to measure the ionization efficiency curve for tellurium atoms. Our electron spectrometer comprises two serially mounted hypocycloidal electron energy analyzers [2], the first being the monochromator and the second - the scattered electron analyzer. The whole spectrometer is immersed into the homogenous magnetic field. Great care was taken in selecting the value of the extracting potential at the electrode, mounted normally to the atomic beam direction. By careful choosing this potential as low as possible (∼1.4 V), its influence on the motion of the monochromatized electrons in the collision region was minimized and the full collection of the formed ions was reached. The atom beam was produced using a compact effusion source made of the stainless steel with a microchannel exit to minimise the angular divergency of the beam. The temperature of the microchannel plate was taken about 50 K higher than that of the metal vapour in the heated reservoir. This atomic beam source enabled to produce an atomic beam with the concentration of two orders of magnitude higher than that in the case of a standard effusion source. A typical value of the electron energy spread was 0.15 eV (FWHM) in the 0.1-15 eV energy range. The primary electron beam current was equal to 10 -7 A. Such values of electron energy spread and beam current for the primary electron beam passing through the collision chamber were chosen to provide identical conditions for carrying out all the measurements. The energy scale was calibrated with the accuracy of ± 0.05 eV. The measured ionization cross-section normalized to the results

Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

Science.gov (United States)

Bhasin, K. B.; Connolly, D. J.

1986-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

Direct observation of the orbital spin Kondo effect in gallium arsenide quantum dots

Science.gov (United States)

Shang, Ru-Nan; Zhang, Ting; Cao, Gang; Li, Hai-Ou; Xiao, Ming; Guo, Guang-Can; Guo, Guo-Ping

2018-02-01

Besides the spin Kondo effect, other degrees of freedom can give rise to the pseudospin Kondo effect. We report a direct observation of the orbital spin Kondo effect in a series-coupled gallium arsenide (GaAs) double quantum dot device where orbital degrees act as pseudospin. Electron occupation in both dots induces a pseudospin Kondo effect. In a region of one net spin impurity, complete spectra with three resonance peaks are observed. Furthermore, we observe a pseudo-Zeeman effect and demonstrate its electrical controllability for the artificial pseudospin in this orbital spin Kondo process via gate voltage control. The fourfold degeneracy point is realized at a specific value supplemented by spin degeneracy, indicating a transition from the SU(2) to the SU(4) Kondo effect.

Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

Energy Technology Data Exchange (ETDEWEB)

Azam, Sikander; Khan, Saleem Ayaz [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States)

2015-10-15

Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

Reprint of “Extracellular production of tellurium nanoparticles by the photosynthetic bacterium Rhodobacter capsulatus”

Energy Technology Data Exchange (ETDEWEB)

Borghese, Roberto, E-mail: roberto.borghese@unibo.it [Dept. of Pharmacy and Biotechnology, University of Bologna (Italy); Brucale, Marco [Institute for the Study of Nanostructured Materials (CNR-ISMN), Rome (Italy); Fortunato, Gianuario [Dept. of Pharmacy and Biotechnology, University of Bologna (Italy); Lanzi, Massimiliano [Dept. of Industrial Chemistry “Toso Montanari”, University of Bologna (Italy); Mezzi, Alessio [Institute for the Study of Nanostructured Materials (CNR-ISMN), Rome (Italy); Valle, Francesco; Cavallini, Massimiliano [Institute for the Study of Nanostructured Materials (CNR-ISMN), Bologna (Italy); Zannoni, Davide [Dept. of Pharmacy and Biotechnology, University of Bologna (Italy)

2017-02-15

Highlights: • Tellurite is reduced by R. capsulatus as cytosolic tellurium nanoprecipitates TeNPs. • Lawsone allows R. capsulatus to produce extracellular TeNPs. • Extracellular TeNPs production depends on the carbon source used for cells growth. • Both lawsone concentration and the incubation time determine the TeNPs size. • Extracellular TeNPs are coated with extracellular polymeric substances (EPS). - Abstract: The toxic oxyanion tellurite (TeO{sub 3}{sup 2−}) is acquired by cells of Rhodobacter capsulatus grown anaerobically in the light, via acetate permease ActP2 and then reduced to Te{sup 0} in the cytoplasm as needle-like black precipitates. Interestingly, photosynthetic cultures of R. capsulatus can also generate Te{sup 0} nanoprecipitates (TeNPs) outside the cells upon addition of the redox mediator lawsone (2-hydroxy-1,4-naphtoquinone). TeNPs generation kinetics were monitored to define the optimal conditions to produce TeNPs as a function of various carbon sources and lawsone concentration. We report that growing cultures over a 10 days period with daily additions of 1 mM tellurite led to the accumulation in the growth medium of TeNPs with dimensions from 200 up to 600–700 nm in length as determined by atomic force microscopy (AFM). This result suggests that nucleation of TeNPs takes place over the entire cell growth period although the addition of new tellurium Te{sup 0} to pre-formed TeNPs is the main strategy used by R. capsulatus to generate TeNPs outside the cells. Finally, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) analysis of TeNPs indicate they are coated with an organic material which keeps the particles in solution in aqueous solvents.

Damage structure of gallium arsenide irradiated in a high-voltage electron microscope

International Nuclear Information System (INIS)

Loretto, D.; Loretto, M.H.

1989-01-01

Semi-insulating undoped gallium arsenide has been irradiated in a high-voltage electron microscope between room temperature and about 500 0 C for doses of up to 5 x 10 22 electrons cm -2 at 1 MeV. Room-temperature irradiation produces small (less than 5 nm) damage clusters. As the temperature of the irradiation is increased, the size of these clusters increases, until at about 300 0 C a high density of dislocation loops can be resolved. The dislocation loops, 20 nm or less in diameter, which are produced at about 500 0 C have been analysed in a bright field using a two-beam inside-outside method which minimises the tilt necessary between micrographs. It is concluded that the loops are an interstitial perfect-edge type with a Burgers vector of (a/2) . (author)

Total β-decay energies and masses of tin, antimony and tellurium isotopes in the vicinity of 50132Sn82

International Nuclear Information System (INIS)

Lund, E.; Aleklett, K.; Rudstam, G.

1977-01-01

Experimental β-decay energies for short-lived isotopes of tin, antimony and tellurium are presented. Mass-separated sources were produced at the on-line isotope separator OSIRIS. By applying β-γ coincidence methods, total β-decay energies have been determined for the following nuclides: 127-131 Sn, 128 130 131 134 Sb and 134 135 Te. The atomic mass excess has been derived for these nuclei, and comparisons are made with mass formula predictions. (Auth.)

In vitro and in vivo activity of an organic tellurium compound on Leishmania (Leishmania chagasi.

Directory of Open Access Journals (Sweden)

Isabella Aparecida Salerno Pimentel

Full Text Available Tellurium compounds have shown several biological properties and recently the leishmanicidal effect of one organotellurane was demonstrated. These findings led us to test the effect of the organotellurium compound RF07 on Leishmania (Leishmania chagasi, the agent of visceral leishmaniasis in Latin America. In vitro assays were performed in L. (L. chagasi-infected bone marrow derived macrophages treated with different concentrations of RF07. In in vivo experiments Golden hamsters were infected with L. (L. chagasi and injected intraperitoneally with RF07 whereas control animals received either Glucantime or PBS. The effect of RF07 on cathepsin B activity of L. (L. chagasi amastigotes was assayed spectrofluorometrically using fluorogenic substrates. The main findings were: 1 RF07 showed significant leishmanicidal activity against intracellular parasites at submicromolar concentrations (IC50 of 529.7±26.5 nM, and the drug displayed 10-fold less toxicity to macrophages (CC50 of 5,426±272.8 nM; 2 kinetics assays showed an increasing leishmanicidal action of RF07 at longer periods of treatment; 3 one month after intraperitoneal injection of RF07 L. (L. chagasi-infected hamsters showed a reduction of 99.6% of parasite burden when compared to controls that received PBS; 4 RF07 inhibited the cathepsin B activity of L. (L. chagasi amastigotes. The present results demonstrated that the tellurium compound RF07 is able to destroy L. (L. chagasi in vitro and in vivo at concentrations that are non toxic to the host. We believe these findings support further study of the potential of RF07 as a possible alternative for the chemotherapy of visceral leishmaniasis.

Ab-initio study of pure sup 7 sup 7 Se and sup 1 sup 2 sup 5 Te systems and of the sup 7 sup 7 Se nuclear quadrupole interaction in tellurium

CERN Document Server

Oh, Y K; Cho, H S

1999-01-01

Using the Hartree-Fock cluster procedure, we have studied the electric-field gradient tensors at the nuclear sites of sup 7 sup 7 Se and sup 1 sup 2 sup 5 Te in pure sup 1 sup 2 sup 5 Te systems and in tellurium crystalline system's with a sup 7 sup 7 Se impurity. From the results for the pure systems, sup 7 sup 7 Se in selenium and sup 1 sup 2 sup 5 Te in tellurium, using the observed quadrupole moments: Q( sup 7 sup 7 Se) 0.75 +- 0.07 barns and Q( sup 1 sup 2 sup 5 Te) = 0.35 +- 0.04 barns. Comparison is made with earlier values obtained by different methods. Using our calculated values of Q and the results of a study of the field-gradient tensors for sup 7 sup 7 Se in tellurium, the theoretical values of the quadrupole coupling constants are found to agree, within about 7 percent, with experiment. The calculated asymmetry parameters are also found to be in reasonable agreement with the experiment values, although the agreement not as close as in the case of the quadrupole -coupling constants. Directions fo...

Melt-gas phase equilibria and state diagrams of the selenium-tellurium system

Science.gov (United States)

Volodin, V. N.; Trebukhov, S. A.; Burabaeva, N. M.; Nitsenko, A. V.

2017-05-01

The partial pressures of saturated vapor of the components in the Se-Te system are determined and presented in the form of temperature-concentration dependences from which the boundaries of the melt-gas phase transition are calculated at atmospheric pressure and vacuums of 2000 and 100 Pa. The existence of azeotropic mixtures is revealed. It is found that the points of inseparably boiling melts correspond to 7.5 at % of Se and 995°C at 101325 Pa, 10.9 at % at 673°C and 19.5 at % at 522°C in vacuums of 2000 and 100 Pa, respectively. A complete state diagram is constructed, including the fields of gas-liquid equilibria at atmospheric and low pressures, the boundaries of which allow us to assess the behavior of selenium and tellurium upon distillation fractionation.

Simultaneous analysis of arsenic, antimony, selenium and tellurium in environmental samples using hydride generation ICPMS

International Nuclear Information System (INIS)

Jankowski, L.M.; Breidenbach, R.; Bakker, I.J.I.; Epema, O.J.

2009-01-01

Full text: A quantitative method for simultaneous analysis of arsenic, antimony, selenium and tellurium in environmental samples is being developed using hydride generation ICPMS. These elements must be first transformed into hydride-forming oxidation states. This is particularly challenging for selenium and antimony because selenium is susceptible to reduction to the non-hydride-forming elemental state and antimony requires strong reducing conditions. The effectiveness of three reducing agents (KI, thiourea, cysteine) is studied. A comparison is made between addition of reducing agent to the sample and addition of KI to the NaBH 4 solution. Best results were obtained with the latter approach. (author)

Luminescent Tellurium-Doped Cadmium Sulfide Electrodes as Probes of Semiconductor Excited-State Deactivation Processes in Photoelectrochemical Cells.

Science.gov (United States)

1980-08-12

photocurrent and emission intensity. Whereas CdS:Te electrochemistry consisted of oxidation of an electrolyte 2+ reductant, ZnO underwent photoanodic...employed n- and 1 3 2,3 3 3,4p-type GaPl’ n-type ZnO , n-type CdS , and n- and p-type GaAs. We have focussed our attention recently on n-type, tellurium...should point out that our treatment of Or and 0x is not without precedent. Both GaP- and ZnO -based PECs have been examined in this regard.l12 The

Determination of frequencies of atomic oscillations along the fourth order symmetry axis in indium arsenide according to thermal diffusion scattering of X-rays

International Nuclear Information System (INIS)

Orlova, N.S.

1978-01-01

Intensity of diffusion scattering of X-rays from the plane of a monocrystal of indium arsenide has been measured on the monochromatized CuKsub(α)-radiation. The samples are made of Cl indium arsenide monocrystal of the n-type with the 1x10 18 cm -3 concentration of carriers in the form of a plate with the polished parallel cut-off with the +-5' accuracy. The investigations have been carried out on the URS-5 IM X-ray diffractometer at room temperature in vacuum. Intensities of thermal diffusion scattering of the second order have been calculated by the two-atomic chain model with different mass and four interaction paramaters. Based upon the analysis of intensity of single-phonon diffusion scattering the curves of frequencies of atomic oscillations along the direction [100] have been determined. The values of frequencies obtained experimentally on the thermal diffusion scattering of X-rays are in a satisfactory agreement with the calculated data. The frequencies obtained are compared with the results of calculation and the analysis of multiphonon spectra of IR-absorption made elsewhere

The anti-inflammatory effects of the tellurium redox modulating compound, AS101, are associated with regulation of NFκB signaling pathway and nitric oxide induction in macrophages

Directory of Open Access Journals (Sweden)

Sredni Benjamin

2010-01-01

Full Text Available Abstract Background LPS-activated macrophages produce mediators which are involved in inflammation and tissue injury, and especially those associated with endotoxic shock. The non toxic tellurium compound ammonium tri-chloro(dioxoethylene-O,O'-tellurate, AS101, has been recently shown to exert profound anti-inflammatory properties in animal models, associated with its Te(IV redox chemistry. This study explores the anti-inflammatory properties of AS101 with respect to modulation of inflammatory cytokines production and regulation of iNOS transcription and expression in activated macrophages via targeting the NFkB complex. Results AS101 decreased production of IL-6 and in parallel down-regulated LPS-induced iNOS expression and NO secretion by macrophages. AS101 reduced IkB phosphorylation and degradation, and reduced NFkB nuclear translocalization, albeit these effects were exerted at different kinetics. Chromatin immunoprecipitation assays showed that AS101 treatment attenuated p50-subunit ability to bind DNA at the NFkB consensus site in the iNOS promotor following LPS induction. Conclusions Besides AS101, the investigation of therapeutic activities of other tellurium(IV compounds is scarce in the literature, although tellurium is the fourth most abundant trace element in the human body. Since IKK and NFkB may be regulated by thiol modifications, we may thus envisage, inview of our integrated results, that Te(IV compounds, may have important roles in thiol redox biological activity in the human body and represent a new class of anti-inflammatory compounds.

Stability studies of arsenic, selenium, antimony and tellurium species in water, urine, fish and soil extracts using HPLC/ICP-MS

Energy Technology Data Exchange (ETDEWEB)

Lindemann, T.; Prange, A.; Neidhart, B. [GKSS Research Centre, Geesthacht (Germany). Inst. of Physical and Chemical Analysis; Dannecker, W. [Hamburg Univ. (Germany). Inst. fuer Anorganische und Angewandte Chemie

2000-10-01

The stability of arsenic, selenium, antimony and tellurium species in water and urine (NIST SRM 2670n) as well as in extracts of fish and soil certified reference materials (DORM-2 and NIST SRM 2710) has been investigated. Stability studies were carried out with As(III), As(V), arsenobetaine, monomethylarsonic acid (MMA), dimethylarsinic acid (DMA), phenylarsonic acid (PAA), Se(IV), Se(VI), selenomethionine, Sb(III), Sb(V) and Te(VI). Speciation analysis was performed by on-line coupling of anion exchange high-performance liquid chromatography (HPLC) with inductively coupled plasma mass spectrometry (ICP-MS). Best storage of aqueous mixtures of the examined species was achieved at 3 C whereas at -20 C species transformation especially of selenomethionine and Sb(V) took place and a new selenium species appeared within a period of 30 days. Losses and species transformations during extraction processes were investigated. Extraction of the spiked fish material with methanol/water led to partial conversion of Sb(III), Sb(V) and selenomethionine to two new antimony and one new selenium species. The other arsenic, selenium and tellurium species were almost quantitatively extracted. For soil spiked with MMA, PAA, Se(IV) and Sb(III), recoveries after extraction with water and sulfuric acid (0.01 mol/L) were below 20%. (orig.)

Phase diagram of (Li(1-x)Fe(x))OHFeSe: a bridge between iron selenide and arsenide superconductors.

Science.gov (United States)

Dong, Xiaoli; Zhou, Huaxue; Yang, Huaixin; Yuan, Jie; Jin, Kui; Zhou, Fang; Yuan, Dongna; Wei, Linlin; Li, Jianqi; Wang, Xinqiang; Zhang, Guangming; Zhao, Zhongxian

2015-01-14

Previous experimental results have shown important differences between iron selenide and arsenide superconductors which seem to suggest that the high-temperature superconductivity in these two subgroups of iron-based families may arise from different electronic ground states. Here we report the complete phase diagram of a newly synthesized superconducting (SC) system, (Li1-xFex)OHFeSe, with a structure similar to that of FeAs-based superconductors. In the non-SC samples, an antiferromagnetic (AFM) spin-density-wave (SDW) transition occurs at ∼127 K. This is the first example to demonstrate such an SDW phase in an FeSe-based superconductor system. Transmission electron microscopy shows that a well-known √5×√5 iron vacancy ordered state, resulting in an AFM order at ∼500 K in AyFe2-xSe2 (A = metal ions) superconductor systems, is absent in both non-SC and SC samples, but a unique superstructure with a modulation wave vector q = (1)/2(1,1,0), identical to that seen in the SC phase of KyFe2-xSe2, is dominant in the optimal SC sample (with an SC transition temperature Tc = 40 K). Hence, we conclude that the high-Tc superconductivity in (Li1-xFex)OHFeSe stems from the similarly weak AFM fluctuations as FeAs-based superconductors, suggesting a universal physical picture for both iron selenide and arsenide superconductors.

Calculations of energy levels and electromagnetic properties for tellurium pair isotopes, by unified method

International Nuclear Information System (INIS)

Teixeira, R.R.P.

1988-01-01

Calculations with the Unified Model (vibrator coupled to two particles), of the energy levels and the eletromagnetic properties have been performed and compared with the twelve pair isotopes from tellurium with A between 112 and 134. The results were analysed using as particles interaction: pairing and SDI (Surface Delta Interaction). The SDI and 3 fonons collective states were used in the fittings, and a syntematic comparison between the theoretical and experimental results was made. The dependence of the results with the model parameters was determined, through large variation sof them. Calculations using 4 fonons have been made, and the importance of the introduced variations in the results was discussed. Calculations have been made in the VAX Computer of the Pelletron at IFUSP. (author) [pt

Development of tellurium oxide and lead-bismuth oxide glasses for mid-wave infra-red transmission optics

Science.gov (United States)

Zhou, Beiming; Rapp, Charles F.; Driver, John K.; Myers, Michael J.; Myers, John D.; Goldstein, Jonathan; Utano, Rich; Gupta, Shantanu

2013-03-01

Heavy metal oxide glasses exhibiting high transmission in the Mid-Wave Infra-Red (MWIR) spectrum are often difficult to manufacture in large sizes with optimized physical and optical properties. In this work, we researched and developed improved tellurium-zinc-barium and lead-bismuth-gallium heavy metal oxide glasses for use in the manufacture of fiber optics, optical components and laser gain materials. Two glass families were investigated, one based upon tellurium and another based on lead-bismuth. Glass compositions were optimized for stability and high transmission in the MWIR. Targeted glass specifications included low hydroxyl concentration, extended MWIR transmission window, and high resistance against devitrification upon heating. Work included the processing of high purity raw materials, melting under controlled dry Redox balanced atmosphere, finning, casting and annealing. Batch melts as large as 4 kilograms were sprue cast into aluminum and stainless steel molds or temperature controlled bronze tube with mechanical bait. Small (100g) test melts were typically processed in-situ in a 5%Au°/95%Pt° crucible. Our group manufactured and evaluated over 100 different experimental heavy metal glass compositions during a two year period. A wide range of glass melting, fining, casting techniques and experimental protocols were employed. MWIR glass applications include remote sensing, directional infrared counter measures, detection of explosives and chemical warfare agents, laser detection tracking and ranging, range gated imaging and spectroscopy. Enhanced long range mid-infrared sensor performance is optimized when operating in the atmospheric windows from ~ 2.0 to 2.4μm, ~ 3.5 to 4.3μm and ~ 4.5 to 5.0μm.

Semiconducting icosahedral boron arsenide crystal growth for neutron detection

Science.gov (United States)

Whiteley, C. E.; Zhang, Y.; Gong, Y.; Bakalova, S.; Mayo, A.; Edgar, J. H.; Kuball, M.

2011-03-01

Semiconducting icosahedral boron arsenide, B12As2, is an excellent candidate for neutron detectors, thermoelectric converters, and radioisotope batteries, for which high quality single crystals are required. Thus, the present study was undertaken to grow B12As2 crystals by precipitation from metal solutions (nickel) saturated with elemental boron (or B12As2 powder) and arsenic in a sealed quartz ampoule. B12As2 crystals of 10-15 mm were produced when a homogeneous mixture of the three elements was held at 1150 °C for 48-72 h and slowly cooled (3.5 °C/h). The crystals varied in color and transparency from black and opaque to clear and transparent. X-ray topography (XRT), and elemental analysis by energy dispersive X-ray spectroscopy (EDS) confirmed that the crystals had the expected rhombohedral structure and chemical stoichiometry. The concentrations of residual impurities (nickel, carbon, etc.) were low, as measured by Raman spectroscopy and secondary ion mass spectrometry (SIMS). Additionally, low etch-pit densities (4.4×107 cm-2) were observed after etching in molten KOH at 500 °C. Thus, the flux growth method is viable for growing large, high-quality B12As2 crystals.

Reaction of 1-bromo-3-chloropropane with tellurium and dimethyl telluride in the system of hydrazine hydrate-alkali

International Nuclear Information System (INIS)

Russavskaya, N.V.; Levanova, E.P.; Sukhomazova, Eh.N.; Grabel'nykh, V.A.; Elaev, A.V.; Klyba, L.V.; Zhanchipova, E.R.; Albanov, A.I.; Korotaeva, I.M.; Toryashinova, D.S.D.; Korchevin, N.A.

2006-01-01

A synthesis of oligomeric substance of thiocol type, the poly(trimethyleneditelluride), from 1-bromo-3-chloropropane and elemental tellurium is performed using a hydrazine hydrate-alkali system. Reductive splitting of the tellurocol followed by alkylation with methyl iodide give rise to preparation of bis(methyltelluro)propane, which was synthesized also from dimethyl telluride and 1,3-dihalopropanes using the N 2 H 4 ·H 2 O/KOH system. The reaction products were characterized by elementary analysis, NMR, and IR spectra. Mass spectra of the synthesized low molecular weight organotellurium compounds are considered [ru

Seeded growth of boron arsenide single crystals with high thermal conductivity

Science.gov (United States)

Tian, Fei; Song, Bai; Lv, Bing; Sun, Jingying; Huyan, Shuyuan; Wu, Qi; Mao, Jun; Ni, Yizhou; Ding, Zhiwei; Huberman, Samuel; Liu, Te-Huan; Chen, Gang; Chen, Shuo; Chu, Ching-Wu; Ren, Zhifeng

2018-01-01

Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W m-1 K-1 at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m-1 K-1 at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.

Potential for improved extraction of tellurium as a byproduct of current copper mining processes

Science.gov (United States)

Hayes, S. M.; Spaleta, K. J.; Skidmore, A. E.

2016-12-01

Tellurium (Te) is classified as a critical element due to its increasing use in high technology applications, low average crustal abundance (3 μg kg-1), and primary source as a byproduct of copper extraction. Although Te can be readily recovered from copper processing, previous studies have estimated a 4 percent extraction efficiency, and few studies have addressed Te behavior during the entire copper extraction process. The goals of the present study are to perform a mass balance examining Te behavior during copper extraction and to connect these observations with mineralogy of Te-bearing phases which are essential first steps in devising ways to optimize Te recovery. Our preliminary mass balance results indicate that less than 3 percent of Te present in copper ore is recovered, with particularly high losses during initial concentration of copper ore minerals by flotation. Tellurium is present in the ore in telluride minerals (e.g., Bi-Te-S phases, altaite, and Ag-S-Se-Te phases identified using electron microprobe) with limited substitution into sulfide minerals (possibly 10 mg kg-1 Te in bulk pyrite and chalcopyrite). This work has also identified Te accumulation in solid-phase intermediate extraction products that could be further processed to recover Te, including smelter dusts (158 mg kg-1) and pressed anode slimes (2.7 percent by mass). In both the smelter dusts and anode slimes, X-ray absorption spectroscopy indicates that about two thirds of the Te is present as reduced tellurides. In anode slimes, electron microscopy shows that the remaining Te is present in an oxidized form in a complex Te-bearing oxidate phase also containing Pb, Cu, Ag, As, Sb, and S. These results clearly indicate that more efficient, increased recovery of Te may be possible, likely at minimal expense from operating copper processing operations, thereby providing more Te for manufacturing of products such as inexpensive high-efficiency solar panels.

Agglomeration during wet milling of LAST (lead-antimony-silver-tellurium) powders

International Nuclear Information System (INIS)

Hall, B.D.; Case, E.D.; Ren, F.; Johnson, J.R.; Timm, E.J.

2009-01-01

LAST (lead-antimony-silver-tellurium) compounds comprise a family of semiconducting materials with good thermoelectric properties. However, the as-cast form of LAST exhibits large grain size and hence low mechanical strength. Powder processing can produce a fine powder particle size that enhances fracture strength, however the powders tend to agglomerate if the individual powder diameters are less than a few microns across. Dry milling or wet milling (hexane additions of 0 cm 3 and 10 cm 3 ) produced hard agglomerates roughly 40 μm in diameter while wet milling with hexane additions of 25 cm 3 , 30 cm 3 or 50 cm 3 resulted in small, porous agglomerates roughly 20 μm in diameter. Thus, by adjusting the amount of milling liquid used while milling LAST powders, one can shift from hard to soft agglomerates, where the literature shows that soft agglomerates are less harmful to the final, sintered product. Also, in agreement with the results from the literature on other materials, wet milling of LAST powders produced smaller particle sizes but required longer times to reach the grindability limit

Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures

Science.gov (United States)

Dunaev, A. V.; Murin, D. B.

2018-04-01

Halogen-containing plasmas are often used to form topological structures on semiconductor surfaces; therefore, spectral monitoring of the etching process is an important diagnostic tool in modern electronics. In this work, the emission spectra of gas discharges in mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconducting gallium arsenide plate were studied. Spectral lines and bands of the GaAs etching products appropriate for monitoring the etching rate were determined. It is shown that the emission intensity of the etching products is proportional to the GaAs etching rate in plasmas of HCl mixtures with Ar and Cl2, which makes it possible to monitor the etching process in real time by means of spectral methods.

Normal vibrations in gallium arsenide

International Nuclear Information System (INIS)

Dolling, G.; Waugh, J.L.T.

1964-01-01

The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296 o K. The frequencies of normal modes of vibration propagating in the [ζ00], (ζζζ], and (0ζζ] crystal directions have been determined with a precision of between 1 and 2·5 per cent. A limited number of normal modes have also been studied at 95 and 184 o K. Considerable difficulty was experienced in obtaining welt resolved neutron peaks corresponding to the two non-degenerate optic modes for very small wave-vector, particularly at 296 o K. However, from a comparison of results obtained under various experimental conditions at several different points in reciprocal space, frequencies (units 10 12 c/s) for these modes (at 296 o K) have been assigned: T 8·02±0·08 and L 8·55±02. Other specific normal modes, with their measured frequencies are (a) (1,0,0): TO 7·56 ± 008, TA 2·36 ± 0·015, LO 7·22 ± 0·15, LA 6·80 ± 0·06; (b) (0·5, 0·5, 0·5): TO 7·84 ± 0·12, TA 1·86 ± 0·02, LO 7·15 ± 0·07, LA 6·26 ± 0·10; (c) (0, 0·65, 0·65): optic 8·08 ±0·13, 7·54 ± 0·12 and 6·57 ± 0·11, acoustic 5·58 ± 0·08, 3·42 · 0·06 and 2·36 ± 004. These results are generally slightly lower than the corresponding frequencies for germanium. An analysis in terms of various modifications of the dipole approximation model has been carried out. A feature of this analysis is that the charge on the gallium atom appears to be very small, about +0·04 e. The frequency distribution function has been derived from one of the force models. (author)

Laser resonance ionization scheme development for tellurium and germanium at the dual Ti:Sa–Dye ISOLDE RILIS

CERN Document Server

Day Goodacre, T.; Fedosseev, V.N.; Forster, L.; Marsh, B.A.; Rossel, R.E.; Rothe, S.; Veinhard, M.

2016-01-01

The resonance ionization laser ion source (RILIS) is the principal ion source of the ISOLDE radioactive beam facility based at CERN. Using the method of in-source laser resonance ionization spectroscopy, a transition to a new autoionizing state of tellurium was discovered and applied as part of a three-step, three-resonance, photo-ionization scheme. In a second study, a three-step, two-resonance, photo-ionization scheme for germanium was developed and the ionization efficiency was measured at ISOLDE. This work increases the range of ISOLDE RILIS ionized beams to 31 elements. Details of the spectroscopy studies are described and the new ionization schemes are summarized.

Laser resonance ionization scheme development for tellurium and germanium at the dual Ti:Sa–Dye ISOLDE RILIS

Energy Technology Data Exchange (ETDEWEB)

Day Goodacre, T., E-mail: thomas.day.goodacre@cern.ch [CERN, CH-1211 Geneva 23 (Switzerland); School of Physics and Astronomy, The University of Manchester, Manchester M13 9PL (United Kingdom); Fedorov, D. [Petersburg Nuclear Physics Institute, 188350 Gatchina (Russian Federation); Fedosseev, V.N.; Forster, L.; Marsh, B.A. [CERN, CH-1211 Geneva 23 (Switzerland); Rossel, R.E. [CERN, CH-1211 Geneva 23 (Switzerland); Institut für Physik, Johannes Gutenberg Universität, D-55099 Mainz (Germany); Faculty of Design, Computer Science and Media, Hochschule RheinMain, Wiesbaden (Germany); Rothe, S.; Veinhard, M. [CERN, CH-1211 Geneva 23 (Switzerland)

2016-09-11

The resonance ionization laser ion source (RILIS) is the principal ion source of the ISOLDE radioactive beam facility based at CERN. Using the method of in-source laser resonance ionization spectroscopy, a transition to a new autoionizing state of tellurium was discovered and applied as part of a three-step, three-resonance, photo-ionization scheme. In a second study, a three-step, two-resonance, photo-ionization scheme for germanium was developed and the ionization efficiency was measured at ISOLDE. This work increases the range of ISOLDE RILIS ionized beams to 31 elements. Details of the spectroscopy studies are described and the new ionization schemes are summarized.

High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

International Nuclear Information System (INIS)

Miah, M. Idrish

2008-01-01

High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained

High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong-4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-11-17

High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained.

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

Directory of Open Access Journals (Sweden)

Domenico Melisi

2014-11-01

Full Text Available In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed.

Effect of aging and temperature on alternating current conductivity of tellurium thin films

Energy Technology Data Exchange (ETDEWEB)

Tsiulyanu, D. [Technical University, Department of Physics, bul. Dacia 41, MD-2060, Chisinau (Moldova, Republic of)], E-mail: tsiu@cni.md; Marian, T.; Tiuleanu, A. [Technical University, Department of Physics, bul. Dacia 41, MD-2060, Chisinau (Moldova, Republic of); Liess, H.-D.; Eisele, I. [University of the Bundeswehr Munich, Faculty of Electrical Engineering and Information Technology, Institute of Physics, D-85577 Neubiberg (Germany)

2009-02-27

The impedance spectra of tellurium films with interdigital platinum electrodes were investigated in air at temperatures between 10 and 50 deg. C . Cole-Cole analysis made it possible to assess time constants, resistance, and capacitance of the film at characteristic frequencies and the dependence of these parameters on aging and temperature. Aging under normal conditions over 12 months led to a relative increase of only {approx} 5% in film impedance at the characteristic frequency. However, aging noticeably influences the electrical resistance of the film at high (> 500 kHz) frequencies, and capacitance diminished after 12 months by more than 50% throughout the spectrum. Scanning electron microscopy confirmed that the effect of aging is due to structural changes in the film. Temperature does not influence the capacitance of the film but uncommonly influences its resistance, which reaches a maximum at around 20 deg. C . This is ascribed to desorption of oxygen previously adsorbed from the environment.

Effect of aging and temperature on alternating current conductivity of tellurium thin films

International Nuclear Information System (INIS)

Tsiulyanu, D.; Marian, T.; Tiuleanu, A.; Liess, H.-D.; Eisele, I.

2009-01-01

The impedance spectra of tellurium films with interdigital platinum electrodes were investigated in air at temperatures between 10 and 50 deg. C . Cole-Cole analysis made it possible to assess time constants, resistance, and capacitance of the film at characteristic frequencies and the dependence of these parameters on aging and temperature. Aging under normal conditions over 12 months led to a relative increase of only ∼ 5% in film impedance at the characteristic frequency. However, aging noticeably influences the electrical resistance of the film at high (> 500 kHz) frequencies, and capacitance diminished after 12 months by more than 50% throughout the spectrum. Scanning electron microscopy confirmed that the effect of aging is due to structural changes in the film. Temperature does not influence the capacitance of the film but uncommonly influences its resistance, which reaches a maximum at around 20 deg. C . This is ascribed to desorption of oxygen previously adsorbed from the environment

Study on concentration nonlinearity of interacting acoustic flows in cadmium sulfide and tellurium

International Nuclear Information System (INIS)

Ilisavskij, Yu.V.; Kulakova, L.A.; Yakhkind, Eh.Z.

1976-01-01

The ratio of an one-mode (self-action of an external monochromatic sound wave) and a many-mode (interaction of an external wave with crystal thermal phonons) concentration nonlinearity has been experimentally investigated on sound amplification in cadmium sulphide and tellurium. It has been shown that in a strong piezoelectric the main part in the nonlinear limitation of the sound amplification in a drift field is played by the wave interaction, i.e., the transfer of the sound wave energy into the crystal sound modes starts before the nonlinear self-action of a wave. In Te characterized by a large value of the electromechanical coupling constant value at the sound frequency of about 250 MHz the threshold of many-mode nonlinearity is achieved in fields much below the critical one, and corresponds to the sound intensity as low as 10 -7 W/cm 2 , as compared with 10 -2 W/cm 2 -the threshold of the one-mode nonlinearity

Selectivity control of photosensitive structures based on gallium arsenide phosphide solid solutions by changing the rate of surface recombination

International Nuclear Information System (INIS)

Tarasov, S A; Andreev, M Y; Lamkin, I A; Solomonov, A V

2016-01-01

In this paper, we demonstrate the effect of surface recombination on spectral sensitivity of structures based on gallium arsenide phosphide solid solutions. Simulation of the effect for structures based on a p-n junction and a Schottky barrier was carried out. Photodetectors with different rates of surface recombination were fabricated by using different methods of preliminary treatment of the semiconductor surface. We experimentally demonstrated the possibility to control photodetector selectivity by altering the rate of surface recombination. The full width at half maximum was reduced by almost 4 times, while a relatively small decrease in sensitivity at the maximum was observed. (paper)

Electrochemical and antimicrobial activity of tellurium oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Gupta, Pramod K. [Department of Applied Sciences and Humanities, Jamia Millia Islamia, New Delhi 110067 (India); Special Centre for Nanosciences, Jawaharlal Nehru University, New Delhi 110067 (India); Sharma, Prem Prakash; Sharma, Anshu [Special Centre for Nanosciences, Jawaharlal Nehru University, New Delhi 110067 (India); Khan, Zishan H., E-mail: zishan_hk@yahoo.co.in [Department of Applied Sciences and Humanities, Jamia Millia Islamia, New Delhi 110067 (India); Solanki, Pratima R., E-mail: pratimarsolanki@gmail.com [Special Centre for Nanosciences, Jawaharlal Nehru University, New Delhi 110067 (India)

2016-09-15

Highlights: • TeO{sub 2} NPs synthesized without using any catalyst by chemical vapour deposition method. • The growth temperature was 410 °C with continuous flow of O{sub 2.} • TeO{sub 2} NPs have anti-bacterial activity against E. coli, K. pneumoniae and S. aureus while enhances the growth of S. pyogenes. • TeO{sub 2} shows maximum redox current at pH 7 for phosphate buffer solution. - Abstract: Thin film of tellurium oxide (TeO{sub 2}) has been synthesized by chemical vapour deposition method onto indium tin oxide (ITO) coated glass substrate without using any catalyst. XRD pattern of TeO{sub 2} thin film suggests that the structure of TeO{sub 2} changes from amorphous to crystalline (paratellurite) on dispersing into deionized water. Zeta potential measurement reveals a positive surface potential of 28.8 mV. TEM images shows spherical shaped TeO{sub 2} nanoparticles having average particle size of 65 nm. Electrochemical studies of TeO{sub 2}/ITO electrode exhibit improved electron transfer owing to its inherent electron transfer property at pH 7.0 of phosphate buffer. Antimicrobial activity of TeO{sub 2} has been studied for gram-positive (Staphylococcus aureus and Streptococcus pyogenes) and gram negative (Escherichia coli and Klebsiella pneumoniae) bacterial and fungal strains (Aspergillus nizer and Candida albicans). These studies suggest that the TeO{sub 2} NPs inhibit the growth of E. coli, K. pneumoniae and S. aureus bacteria, whereas the same particles enhance the growth of S. pyogenes bacteria.

Antiparasitic activity of 1,3-dioxolanes containing tellurium in Trichomonas vaginalis.

Science.gov (United States)

Sena-Lopes, Ângela; das Neves, Raquel Nascimento; Bezerra, Francisco Silvestre Brilhante; de Oliveira Silva, Mara Thais; Nobre, Patrick C; Perin, Gelson; Alves, Diego; Savegnago, Lucielli; Begnini, Karine Rech; Seixas, Fabiana Kommling; Collares, Tiago; Borsuk, Sibele

2017-05-01

The increased prevalence of metronidazole-resistant infections has resulted in a search for alternative drugs for the treatment of trichomoniasis. In the present study, we report the preparation and in vitro activity of three 1,3-dioxolanes that contain tellurium (PTeDOX 01, PTeDOX 02, and PTeDOX 03) against Trichomonas vaginalis. Six concentrations of these compounds were analyzed for in vitro activity against ATCC 30236 isolate of T. vaginalis. PTeDOX 01 reported a cytotoxic effect against 100% of T. vaginalis trophozoites at a final concentration of 90μM with an IC 50 of 60μM. The kinetic growth curve of trophozoites indicated that PTeDOX 01 reduced the growth by 22% at a concentration of 90μM after an exposure of 12h, and induced complete parasite death at 24h. It induced cytotoxicity of 44% at 90μM concentration but and had no effect in lower concentrations in a culture of CHO-K1 cells. These results confirmed that PTeDOX 01 is an important drug for the treatment of T. vaginalis, and should be evaluated in other infectious agents as well. Copyright © 2017 Elsevier Masson SAS. All rights reserved.

Normal vibrations in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Dolling, G; Waugh, J L T

1964-07-01

The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296{sup o}K. The frequencies of normal modes of vibration propagating in the [{zeta}00], ({zeta}{zeta}{zeta}], and (0{zeta}{zeta}] crystal directions have been determined with a precision of between 1 and 2{center_dot}5 per cent. A limited number of normal modes have also been studied at 95 and 184{sup o}K. Considerable difficulty was experienced in obtaining welt resolved neutron peaks corresponding to the two non-degenerate optic modes for very small wave-vector, particularly at 296{sup o}K. However, from a comparison of results obtained under various experimental conditions at several different points in reciprocal space, frequencies (units 10{sup 12} c/s) for these modes (at 296{sup o}K) have been assigned: T 8{center_dot}02{+-}0{center_dot}08 and L 8{center_dot}55{+-}02. Other specific normal modes, with their measured frequencies are (a) (1,0,0): TO 7{center_dot}56 {+-} 008, TA 2{center_dot}36 {+-} 0{center_dot}015, LO 7{center_dot}22 {+-} 0{center_dot}15, LA 6{center_dot}80 {+-} 0{center_dot}06; (b) (0{center_dot}5, 0{center_dot}5, 0{center_dot}5): TO 7{center_dot}84 {+-} 0{center_dot}12, TA 1{center_dot}86 {+-} 0{center_dot}02, LO 7{center_dot}15 {+-} 0{center_dot}07, LA 6{center_dot}26 {+-} 0{center_dot}10; (c) (0, 0{center_dot}65, 0{center_dot}65): optic 8{center_dot}08 {+-}0{center_dot}13, 7{center_dot}54 {+-} 0{center_dot}12 and 6{center_dot}57 {+-} 0{center_dot}11, acoustic 5{center_dot}58 {+-} 0{center_dot}08, 3{center_dot}42 {center_dot} 0{center_dot}06 and 2{center_dot}36 {+-} 004. These results are generally slightly lower than the corresponding frequencies for germanium. An analysis in terms of various modifications of the dipole approximation model has been carried out. A feature of this analysis is that the charge on the gallium atom appears to be very small, about +0{center_dot}04 e. The

Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions

Science.gov (United States)

Ramos-Ruiz, Adriana; Wilkening, Jean V.; Field, James A.; Sierra-Alvarez, Reyes

2017-01-01

A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. PMID:28472709

Optical properties of tellurium-doped InxGa1-xAsySb1-y epitaxial layers studied by photoluminescence spectroscopy

International Nuclear Information System (INIS)

Diaz-Reyes, J; Cardona-Bedoya, J A; Gomez-Herrera, M L; Herrera-Perez, J L; Riech, I; Mendoza-Alvarez, J G

2003-01-01

Controlled doping of quaternary alloys of In x Ga 1-x As y Sb 1-y with tellurium is fundamental to obtain the n-type layers needed for the development of optoelectronic devices based on p-n heterojunctions. InGaAsSb epitaxial layers were grown by liquid phase epitaxy and Te doping was obtained by incorporating small Sb 3 Te 2 pellets in the growth melt. The tellurium doping levels were in the range 10 16 -10 17 cm -3 . We have used low-temperature photoluminescence (PL) spectroscopy to study the influence of the Te donor levels on the radiative transitions shown in the PL spectra. The PL measurements were done by exciting the samples with the 448 nm line of an Ar ion laser with varying excitation powers in the range from 10 to 200 mW. For the low-doped sample the PL spectrum showed a narrow exciton-related peak centred at around 610 meV with a full width at half maximum (FWHM) of about 7 meV which is evidence of the good crystalline quality of the layers. For higher Te doping, the PL spectra show the presence of band-to-band and donor-to-acceptor transitions which overlap as the Te concentration increases. The peak of the PL band shifts to higher energies as Te doping increases due to a band-filling effect as the Fermi level enters into the conduction band. From the peak energy of the PL spectra, and using a model that includes the band-filling and band-shrinkage effects due to the carriers, we have estimated the effective carrier concentration due to doping with Te in the epilayers

The roles of the temperature on the structural and electronic properties of deep-level V{sub As}V{sub Ga} defects in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Ma, Deming, E-mail: xautmdm@163.com; Chen, Xi; Qiao, Hongbo; Shi, Wei; Li, Enling

2015-07-15

Highlights: • The energy gap of the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} is 0.82 eV. • Proves that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. • Proves that EL2 and EL6 deep-level defects can transform into each other. • Temperature has an important effect on the microstructure of deep-level defects. - Abstract: The roles of temperature on the structural and electronic properties of V{sub As}V{sub Ga} defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} can be converted from the V{sub As}V{sub Ga} complex clusters defect between 300 K and 1173 K; however, from 1173 K to 1373 K, the decomposition of the complex defect Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} occurs, turning into a deep-level V{sub As}V{sub Ga} cluster defect and an isolated As{sub Ga} antisite defect, and relevant defect of Ga{sub As} is recovered. The properties of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.

Modelling of the small pixel effect in gallium arsenide X-ray imaging detectors

CERN Document Server

Sellin, P J

1999-01-01

A Monte Carlo simulation has been carried out to investigate the small pixel effect in highly pixellated X-ray imaging detectors fabricated from semi-insulating gallium arsenide. The presence of highly non-uniform weighting fields in detectors with a small pixel geometry causes the majority of the induced signal to be generated when the moving charges are close to the pixellated contacts. The response of GaAs X-ray imaging detectors is further complicated by the presence of charge trapping, particularly of electrons. In this work detectors are modelled with a pixel pitch of 40 and 150 mu m, and with thicknesses of 300 and 500 mu m. Pulses induced in devices with 40 mu m pixels are due almost totally to the movement of the lightly-trapped holes and can exhibit significantly higher charge collection efficiencies than detectors with large electrodes, in which electron trapping is significant. Details of the charge collection efficiencies as a function of interaction depth in the detector and of the incident phot...

From Selenium- to Tellurium-Based Glass Optical Fibers for Infrared Spectroscopies

Directory of Open Access Journals (Sweden)

Jacques Lucas

2013-05-01

Full Text Available Chalcogenide glasses are based on sulfur, selenium and tellurium elements, and have been studied for several decades regarding different applications. Among them, selenide glasses exhibit excellent infrared transmission in the 1 to 15 µm region. Due to their good thermo-mechanical properties, these glasses could be easily shaped into optical devices such as lenses and optical fibers. During the past decade of research, selenide glass fibers have been proved to be suitable for infrared sensing in an original spectroscopic method named Fiber Evanescent Wave Spectroscopy (FEWS. FEWS has provided very nice and promising results, for example for medical diagnosis. Then, some sophisticated fibers, also based on selenide glasses, were developed: rare-earth doped fibers and microstructured fibers. In parallel, the study of telluride glasses, which can have transmission up to 28 µm due to its atom heaviness, has been intensified thanks to the DARWIN mission led by the European Space Agency (ESA. The development of telluride glass fiber enables a successful observation of CO2 absorption band located around 15 µm. In this paper we review recent results obtained in the Glass and Ceramics Laboratory at Rennes on the development of selenide to telluride glass optical fibers, and their use for spectroscopy from the mid to the far infrared ranges.

Structural Modeling of Djenkolic Acid with Sulfur Replaced by Selenium and Tellurium

Directory of Open Access Journals (Sweden)

Petr Melnikov

2014-04-01

Full Text Available The comparative structural modeling of djenkolic acid and its derivatives containing selenium and tellurium in chalcogen sites (Ch = Se, Te has provided detailed information about the bond lengths and bond angles, filling the gap in what we know about the structural characteristics of these aminoacids. The investigation using the molecular mechanics technique with good approximation confirmed the available information on X-ray refinements for the related compounds methionine and selenomethionine, as well as for an estimate made earlier for telluromethionine. It was shown that the Ch-C(3 and Ch-C(4 bond lengths grow in parallel with the increasing anionic radii. Although the distances C-C, C-O, and C-N are very similar, the geometry of conformers is quite different owing to the possibility of rotation about four carbon atoms, hence the remarkable variability observed in dihedral angles. It was shown that the compounds contain a rigid block with two Ch atoms connected through a methylene group. The standard program Gaussian 03 with graphical interface Gaussview 4.1.2 has proved to be satisfactory tool for the structural description of less-common bioactive compositions when direct X-ray results are absent.

Study of current instabilities in high resistivity gallium arsenide; Etude des instabilites de courant dans l'arseniure de gallium de haute resistivite

Energy Technology Data Exchange (ETDEWEB)

Barraud, A [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1968-07-01

We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [French] Nous avons mis en evidence et etudie des oscillations de courant qui se produisent a champ electrique eleve dans l'arseniure de

Direct determination of tellurium and its redox speciation at the low nanogram level in natural waters by catalytic cathodic stripping voltammetry.

Science.gov (United States)

Biver, Marc; Quentel, François; Filella, Montserrat

2015-11-01

Tellurium is one of the elements recently identified as technologically critical and is becoming a new emergent contaminant. No reliable method exists for its determination in environmental samples such as natural waters. This gap is filled by the method described here; it allows the rapid detection of trace concentrations of Te(IV) and Te(VI) in surface waters by differential pulse cathodic stripping voltammetry. It is based on the proton reduction catalysed by the absorption of Te(IV) on the mercury electrode. Under our conditions (0.1 mol L(-1) HCl) a detection limit of about 5 ng L(-1) for a deposition time of 300 s is achieved. Organic matter does not represent a problem at low concentrations; higher concentrations are eliminated by adsorptive purification. Tellurium occurs primarily as Te(IV) and Te(VI) in natural waters. Thus, determining total Te requires the reduction of Te(VI) that it is not electroactive. A number of reduction procedures have been carefully evaluated and a method based on the addition of TiCl3 to the acidified samples has been proven to reduce Te(VI) at the trace level to Te(IV) reliably and quantitatively. Therefore, the procedure described allows the direct determination of total Te and its redox speciation. It is flexible, reliable and cost effective compared to any possible alternative method based on the common preconcentration-ICPMS approach. It is readily implementable as a routine method and can be deployed in the field with relative ease. Copyright © 2015 Elsevier B.V. All rights reserved.

Tellurium Stable Isotopes as a Paleoredox Proxy

Science.gov (United States)

Wasserman, N.; Johnson, T. M.

2017-12-01

Despite arguments for variably-oxygenated shallow waters and anoxic deep marine waters, which delayed animal development until the Neoproterozoic Oxidation Event, the magnitude of atmospheric oxygen during the Proterozoic is still uncertain [1]. The evidence for low pO2 (<0.1-1% PAL) is based on geochemical and isotopic proxies, which track the mobilization of Fe and Mn on the continents. For example, large chromium isotope shifts occur at the Neoproterozoic Oxidation Event due to the initiation of Cr redox cycling, but this proxy is insensitive to fluctuations in the lower-pO2 conditions at other times during the Proterozoic. Tellurium, a metalloid with a lower threshold to oxidation, may be sensitive to pO2 shifts in a lower range. In the reduced forms, Te(-II) and Te(0), the element is insoluble and immobile. However, in the more oxidized phases, Te(IV) and Te(VI), Te can form soluble oxyanions (though it tends to adsorb to Fe-oxyhydroxides and clays) [2]. Te stable isotopes have been shown to fractionate during abiotic or biologic reduction of Te(VI) or Te(IV) to elemental Te(0) [3, 4]. Utilizing hydride generation MC-ICP-MS, we are able to obtain high precision (2σ 0.04‰) measurements of δ128Te/125Te for natural samples containing < 10 ng of Te. A suite of Phanerozoic and Proterozoic ironstones show significant variation in δ128Te/125Te (<0.5‰), suggesting that the Te redox cycle was active during the Proterozoic. Future directions will include Te isotope measurements of Precambrian paleosols to determine natural isotope variation before the Great Oxidation Event and experiments to determine fractionation during adsorption to Fe-oxyhydroxides. [1] Planavsky et al. (2014) Science 346 (6209), pp. 635-638 [2] Qin et al. (2017) Environmental Science and Technology 51 (11), pp 6027-6035 [3] Baesman et al. (2007) Applied Environmental Microbiology 73 (7), pp 2135-2143 [4] Smithers and Krause (1968) Canadian Journal of Chemistry 46(4): pp 583-591

Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

Science.gov (United States)

Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

2016-01-01

CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approximately 576-867 degrees Centigrade. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Me-tallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120-degree triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3 plus, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

Science.gov (United States)

Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

2018-04-12

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure

Energy Technology Data Exchange (ETDEWEB)

Kim, Jaehyun; Sellan, Daniel P.; Ou, Eric; Shi, Li, E-mail: lishi@mail.utexas.edu [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Evans, Daniel A.; Williams, Owen M.; Cowley, Alan H. [Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712 (United States)

2016-05-16

Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250 K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phonon scattering. The room temperature value of (186 ± 46) W m{sup −1 }K{sup −1} is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. The foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achieve the predicted ultrahigh intrinsic lattice thermal conductivity of BAs.

Determination of tellurium in gallium by alternating current stripping voltammetry with a mercury/graphite electrode

International Nuclear Information System (INIS)

Berengard, I.B.; Kaplan, B. Ya.

1986-01-01

The analytical signal in ac stripping coltammetry (ACSV) with mercury indicator electrodes depends on the weight of the electrolytically collected analyte at the electrode surface, the depth of the collection layer being equal to the effective diffusion-layer thickness. Replacement of the static mercury drop electrode (SMDE) by the mercury/graphite electrode (MGE) is of practical interest in that the analyte detection limit can be lowered by decreasing the colume of the telluriumcontaining polarographed solution; in addition, plant laboratories find it difficult to control the SDME uniformity. The work in this article was done on a PU-1 universal polarograph in a square-wave vol tage component mode using the three-electrode cell shown. The rotating mercury/graphite electrode is found by the authors to be superior to the static mercury drop electrode in that it can lower the detection limit for tellurium in gallium to 5.10 /SUP -7percent/ , due to the smaller volume of the polarographed solution

Dibromidochlorido{2-[(dimethylaminomethyl]phenyl-κ2N,C1}tellurium(IV

Directory of Open Access Journals (Sweden)

Prakul Rakesh

2012-01-01

Full Text Available The title compound, C9H13Br2ClNTe, was synthesized by reacting [2-(dimethylaminomethylphenyl]tellurium(II chloride with Br2. As a consequence, the Cl and Br atoms are not well ordered but distributed over the three possible positions such that the overall stiochiometry is two Br atoms and one Cl atom. The scrambling of the Br and Cl atoms indicates a small energy barrier for the exchange process between the apical and equatorial positions. Overall, the Te atom geometry is slightly distorted square pyramidal (τ = 0.052 for the major component. However, there is a weak secondary interaction between the Te atoms and the disordered Br/Cl atoms of a nearby molecule. The Te—Br and Te—Cl distances in both disorder components fall into two groups; a longer distance for the Br/Cl involved in this secondary interaction [2.6945 (17 Å for Br and 2.601 (9Å for Cl] and shorter bond distances to the remaining halogen atoms, indicating that this interaction has slightly weakened the Te—X bond, as is the case in the previously reported tribromido structure [Singh et al. (1990. J. Chem. Soc. Dalton Trans. pp. 907–913]. Otherwise, the metrical parameters in the two structures are not significantly different. An intermolecular C—H...Br interaction occurs.

Size Controlled Synthesis of Tellurium Nanorices by Galvanic Displacement Reaction of Aluminum

International Nuclear Information System (INIS)

Wu, Tingjun; Myung, Lawrence Youngjae; Zhang, Miluo; Lee, Kyu-Hwan; Lee, Yeheun Laura; Lim, Hyo-Ryong; Kim, Bum Sung; Choa, Yong-Ho; Myung, Nosang V.

2015-01-01

ABSTRACT: Tellurium nanostructures were synthesized by galvanic displacement reaction (GDR) of aluminum in an alkaline solution containing TeO 3 2− ions. Due to negative redox potential of Al/AlO 2 − (i.e., −2.50 V vs. sat. Ag/AgCl), TeO 3 2− (+IV) can be reduced to Te 2 2− (-I) and Te 2− (-II), which resulted in the deposition of Te (0) nanostructures in the solution via chemical reaction between Te 2 2− or Te 2− and TeO 3 2− . The deposition mechanism led to the formation of unique “rice-like” nanostructures in the solution instead of branched structures on the substrate. The sharp tips of the “rice-like” nanostructures may be attributed to the high density of surface charges at the tips. The morphology, diameter and aspect ratio of Te “rice-like” nanostructures were altered by the TeO 3 2− concentration, solution pH, reaction time and the reaction temperature. Electrochemical analytical methods, including open circuit potential (OCP) and linear polarizations (LPs), were used to investigate the reaction mechanisms. The enhancement of piezoelectric constant (d 11 ) of nanorices at small diameter was probably due to a flexoelectric effect

The Present, Mid-Term, and Long-Term Supply Curves for Tellurium; and Updates in the Results from NREL's CdTe PV Module Manufacturing Cost Model (Presentation)

Energy Technology Data Exchange (ETDEWEB)

Woodhouse, M.; Goodrich, A.; Redlinger, M.; Lokanc, M.; Eggert, R.

2013-09-01

For those PV technologies that rely upon Te, In, and Ga, first-order observations and calculations hint that there may be resource constraints that could inhibit their successful deployment at a SunShot level. These are only first-order approximations, however, and the possibility for an expansion in global Te, In, and Ga supplies needs to be considered in the event that there are upward revisions in their demand and prices.In this study, we examine the current, mid-term, and long-term prospects of Tellurium (Te) for use in PV. We find that the current global supply base of Te would support <10 GW of annual traditional CdTe PV manufacturing production. But as for the possibility that the supply base for Te might be expanded, after compiling several preliminary cumulative availability curves we find that there may be significant upside potential in the supply base for this element - principally vis a vis increasing demand and higher prices. Primarily by reducing the Tellurium intensity in manufacturing and by increasing the recovery efficiency of Te in Cu refining processes, we calculate that it may prove affordable to PV manufacturers to expand the supply base for Te such that 100 GW, or greater, of annual CdTe PV production is possible in the 2030 - 2050 timeframe.

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Equilibrium evaporation behavior of polonium and its homologue tellurium in liquid lead-bismuth eutectic

International Nuclear Information System (INIS)

Ohno, Shuji; Miyahara, Shinya; Kurata, Yuji; Katsura, Ryoei; Yoshida, Shigeru

2006-01-01

Experimental study using the transpiration method investigates equilibrium evaporation behavior of radionuclide polonium ( 210 Po) generated and accumulated in liquid lead-bismuth eutectic (LBE) cooled nuclear systems. The experiment consists of two series of tests: preliminary evaporation tests for homologue element tellurium (Te) in LBE, and evaporation tests for 210 Po-accumulated LBE in which test specimens are prepared by neutron irradiation. The evaporation tests of Te in LBE provide the suggestion that Te exists in a chemical form of PbTe as well as the information for confirming the validity of technique and conditions of Po test. From the evaporation tests of 210 Po in LBE, we obtain fundamental data and empirical equations such as 210 Po vapor concentration in the gas phase, 210 Po partial vapor pressure, thermodynamic activity coefficients, and gas-liquid equilibrium partition coefficient of 210 Po in LBE in the temperature range from 450 to 750degC. Additionally, radioactivity concentration of 210 Po and 210m Bi vapor in a cover gas region of a typical LBE-cooled nuclear system is specifically estimated based on the obtained experimental results, and the importance of 210 Po evaporation behavior is quantitatively demonstrated. (author)

Iron-tellurium-selenium mixed oxide catalysts for the selective oxidation of propylene to acrolein

International Nuclear Information System (INIS)

Patel, B.M.; Price, G.L.

1990-01-01

This paper reports on iron-tellurium-selenium mixed oxide catalysts prepared by coprecipitation from aqueous solution investigated for the propylene to acrolein reaction in the temperature range 543-773 K. Infrared spectroscopy, electron dispersive X-ray analysis, X-ray diffraction, and isotopic tracer techniques have also been employed to characterize this catalytic system. Properties of the Fe-Te-Se mixed oxide catalysts have been compared with Fe-Te mixed oxides in an effort to deduce the functionality of Se. The selenium in the Fe-Te-Se-O catalyst has been found to be the hydrocarbon activating site. The activation energies for the acrolein and carbon dioxide formation are 71 and 54 kJ/mol, respectively. Reactions carried out with 18 O 2 have shown lattice oxygen to be primarily responsible for the formation of both acrolein and carbon dioxide. The initial and rate-determining step for acrolein formation is hydrogen abstraction as determined by an isotope effect associated with the C 3 D 6 reaction. No isotope effect is observed for carbon dioxide formation from C 3 D 6 suggesting that CO 2 is formed by parallel, not consecutive, oxidation of propylene

Enhanced Flexural Strength of Tellurium Nanowires/epoxy Composites with the Reinforcement Effect of Nanowires

Science.gov (United States)

Balguri, Praveen Kumar; Harris Samuel, D. G.; Aditya, D. B.; Vijaya Bhaskar, S.; Thumu, Udayabhaskararao

2018-02-01

Investigating the mechanical properties of polymer nanocomposite materials has been greatly increased in the last decade. In particular, flexural strength plays a major role in resisting bending and shear loads of a composite material. Here, one dimensional (1D) tellurium nanowires (TeNWs) reinforced epoxy composites have been prepared and the flexural properties of resulted TeNWs/epoxy nanocomposites are studied. The diameter and length of the TeNWs used to make TeNWs/epoxy nanocomposites are 21±2.5 nm and 697±87 nm, respectively. Plain and TeNWs/epoxy nanocomposites are characterized by X-ray diffraction (XRD), thermogravimetric analysis (TGA), and differential thermal analysis (DTA). Furthermore, significant enhancement in the flexural strength of TeNWs/epoxy nanocomposite is observed in comparison to plain epoxy composite, i.e. flexural strength is increased by 65% with the addition of very little amount of TeNWs content (0.05 wt.%) to epoxy polymer. Structural details of plain and TeNWs/epoxy at micrometer scale were examined by scanning electron microscopy (SEM). We believe that our results provide a new type of semiconductor nanowires based high strength epoxy polymer nanocomposites.

Improved selectivity for Pb(II) by sulfur, selenium and tellurium analogues of 1,8-anthraquinone-18-crown-5: synthesis, spectroscopy, X-ray crystallography and computational studies.

Science.gov (United States)

Mariappan, Kadarkaraisamy; Alaparthi, Madhubabu; Hoffman, Mariah; Rama, Myriam Alcantar; Balasubramanian, Vinothini; John, Danielle M; Sykes, Andrew G

2015-07-14

We report here a series of heteroatom-substituted macrocycles containing an anthraquinone moiety as a fluorescent signaling unit and a cyclic polyheteroether chain as the receptor. Sulfur, selenium, and tellurium derivatives of 1,8-anthraquinone-18-crown-5 (1) were synthesized by reacting sodium sulfide (Na2S), sodium selenide (Na2Se) and sodium telluride (Na2Te) with 1,8-bis(2-bromoethylethyleneoxy)anthracene-9,10-dione in a 1 : 1 ratio. The optical properties of the new compounds are examined and the sulfur and selenium analogues produce an intense green emission enhancement upon association with Pb(II) in acetonitrile. Selectivity for Pb(II) is markedly improved as compared to the oxygen analogue 1 which was also competitive for Ca(II) ion. UV-Visible and luminescence titrations reveal that 2 and 3 form 1 : 1 complexes with Pb(II), confirmed by single-crystal X-ray studies where Pb(II) is complexed within the macrocycle through coordinate covalent bonds to neighboring carbonyl, ether and heteroether donor atoms. Cyclic voltammetry of 2-8 showed classical, irreversible oxidation potentials for sulfur, selenium and tellurium heteroethers in addition to two one-electron reductions for the anthraquinone carbonyl groups. DFT calculations were also conducted on 1, 2, 3, 6, 6 + Pb(II) and 6 + Mg(II) to determine the trend in energies of the HOMO and the LUMO levels along the series.

Gallium interstitial contributions to diffusion in gallium arsenide

Science.gov (United States)

Schick, Joseph T.; Morgan, Caroline G.

2011-09-01

encountered in fitting experimental results for heavily p-type, Ga-rich gallium arsenide by simply extending a model for gallium interstitial diffusion which has been used for less p-doped material.

Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

Energy Technology Data Exchange (ETDEWEB)

Kretzer, Ulrich

2007-12-10

In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

International Nuclear Information System (INIS)

Wampler, William R.; Myers, Samuel M.

2015-01-01

A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers, and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation

Continuum modelling of silicon diffusion in indium gallium arsenide

Science.gov (United States)

Aldridge, Henry Lee, Jr.

A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point

Raman and DSC studies of fragility in tellurium-zinc oxide glass formers

International Nuclear Information System (INIS)

Stavrou, Elissaios; Kripotou, Sotiria; Raptis, Constantine; Turrell, Sylvia; Syassen, Karl

2011-01-01

Raman scattering and differential scanning calorimetry (DSC) measurements have been carried out in four mixed (TeO 2 ) 1-x (ZnO) x (x = 0.1, 0.2, 0.3, 0.4) glasses at high temperatures (Raman and DSC through the glass transition) and high pressures (Raman) with the aim of determining the fragility of these glass forming oxides. Four different criteria, corresponding to four parameters, were applied to assess the fragility of the glasses. From the DSC studies, we have obtained the fragility parameter m which corresponds to the slopes of Arrhenius (lnQ vs. 1/T g , were Q is the heating rate) plots, and the glass transition width ΔT g . Also, from the low-frequency Raman scattering, and in particular the boson peak intensity of the glasses at T g , we have estimated the fragility ratio r R (T g ) = I min /I max whose value serves as another (empirical) fragility criterion. Finally, from high pressure Raman measurements on the glasses, we have estimated the Grueneisen parameter γ T for each glass, which constitutes the fourth fragility parameter adopted in this work. Considering the four parameters ΔT g , m, r (T g ) and γ T and the generally accepted (empirical) fragility criteria, we conclude that the mixed tellurium-zinc oxides constitute strong-to-intermediate glass formers (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The effect of hydrostatic pressure on the physical properties of magnesium arsenide in cubic and hexagonal phases

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, Ali, E-mail: mokhtari@sci.sku.ac.i [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, P. B. 115, Shahrekord (Iran, Islamic Republic of); Sedighi, Matin [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, P. B. 115, Shahrekord (Iran, Islamic Republic of)

2010-04-01

Full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) was applied to study the structural and electronic properties of the magnesium arsenide in both cubic and hexagonal phases. The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). The lattice parameters, bulk modulus and its pressure derivative, cohesive energy, band structures and effective mass of electrons and holes (EME and EMH) were obtained and compared to the available experimental and theoretical results. A phase transition was predicted at pressure of about 1.63 GPa from the cubic to the hexagonal phase. The effect of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths, anti-symmetry gap (the energy gap between two parts of the valence bands), EME and EMH were investigated using both GGA96 and EV-GGA methods. High applied pressure can decrease (increase) the holes mobility of cubic (hexagonal) phase of this compound.

The effect of hydrostatic pressure on the physical properties of magnesium arsenide in cubic and hexagonal phases

International Nuclear Information System (INIS)

Mokhtari, Ali; Sedighi, Matin

2010-01-01

Full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) was applied to study the structural and electronic properties of the magnesium arsenide in both cubic and hexagonal phases. The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). The lattice parameters, bulk modulus and its pressure derivative, cohesive energy, band structures and effective mass of electrons and holes (EME and EMH) were obtained and compared to the available experimental and theoretical results. A phase transition was predicted at pressure of about 1.63 GPa from the cubic to the hexagonal phase. The effect of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths, anti-symmetry gap (the energy gap between two parts of the valence bands), EME and EMH were investigated using both GGA96 and EV-GGA methods. High applied pressure can decrease (increase) the holes mobility of cubic (hexagonal) phase of this compound.

A study of ion implanted gallium arsenide using deep level transient spectroscopy

International Nuclear Information System (INIS)

Emerson, N.G.

1981-03-01

This thesis is concerned with the study of deep energy levels in ion implanted gallium arsenide (GaAs) using deep level transient spectroscopy (D.L.T.S.). The D.L.T.S. technique is used to characterise deep levels in terms of their activation energies and capture cross-sections and to determine their concentration profiles. The main objective is to characterise the effects on deep levels, of ion implantation and the related annealing processes. In the majority of cases assessment is carried out using Schottky barrier diodes. Low doses of selenium ions 1 to 3 x 10 12 cm -2 are implanted into vapour phase epitaxial (V.P.E.) GaAs and the effects of post-implantation thermal and pulsed laser annealing are compared. The process of oxygen implantation with doses in the range 1 x 10 12 to 5 x 10 13 cm -2 followed by thermal annealing at about 750 deg C, introduces a deep level at 0.79 eV from the conduction band. Oxygen implantation, at doses of 5 x 10 13 cm -2 , into V.P.E. GaAs produces a significant increase in the concentration of the A-centre (0.83 eV). High doses of zinc (10 15 cm -2 ) are implanted into n-type V.P.E. GaAs to form shallow p-type layers. The D.L.T.S. system described in the text is used to measure levels in the range 0.16 to 1.1 eV (for GaAs) with a sensitivity of the order 1:10 3 . (U.K.)

The quaternary arsenide oxides Ce{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} and Pr{sub 9}Au{sub 5-x}As{sub 8}O{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Bartsch, Timo; Hoffmann, Rolf-Dieter; Poettgen, Rainer [Univ. Muenster (Germany). Inst. fuer Anorganische und Analytische Chemie

2016-07-01

The quaternary gold arsenide oxides Ce{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} and Pr{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} were synthesized from the rare earth elements (RE), rare earth oxides, arsenic and gold powder at maximum annealing temperatures of 1173 K. The structures were refined from single crystal X-ray diffractometer data: Pnnm, a=1321.64(6) pm, b=4073.0(3), c=423.96(2), wR2=0.0842, 3106 F{sup 2} values, 160 variables for Ce{sub 9}Au{sub 4.91(4)}As{sub 8}O{sub 6} and Pnnm, a=1315.01(4), b=4052.87(8), c=420.68(1) pm, wR2=0.0865, 5313 F{sup 2} values, 160 variables for Pr{sub 9}Au{sub 4.75(1)}As{sub 8}O{sub 6}. They represent a new structure type and show a further extension of pnictide oxide crystal chemistry. A complex polyanionic gold arsenide network [Au{sub 5}As{sub 8}]{sup 15-} (with some disorder in the gold substructure) is charge compensated with polycationic strands of condensed edge-sharing O rate at RE{sub 4/4} and O rate at RE{sub 4/3} tetrahedra ([RE{sub 4}O{sub 3}]{sub 2}{sup 12+}) as well as RE{sup 3+} cations in cavities.

Application of low-cost Gallium Arsenide light-emitting-diodes as kerma dosemeter and fluence monitor for high-energy neutrons

International Nuclear Information System (INIS)

Mukherjee, B.; Simrock, S.; Khachan, J.; Rybka, D.; Romaniuk, R.

2007-01-01

Displacement damage (DD) caused by fast neutrons in unbiased Gallium Arsenide (GaAs) light emitting diodes (LED) resulted in a reduction of the light output. On the other hand, a similar type of LED irradiated with gamma rays from a 60 Co source up to a dose level in excess of 1.0 kGy (1.0 x 10 5 rad) was found to show no significant drop of the light emission. This phenomenon was used to develop a low cost passive fluence monitor and kinetic energy released per unit mass dosemeter for accelerator-produced neutrons. These LED-dosemeters were used to assess the integrated fluence of photoneutrons, which were contaminated with a strong Bremsstrahlung gamma-background generated by the 730 MeV superconducting electron linac driving the free electron laser in Hamburg (FLASH) at Deutsches Elektronen-Synchrotron. The applications of GaAs LED as a routine neutron fluence monitor and DD precursor for the electronic components located in high-energy accelerator environment are highlighted. (authors)

Test of irradiation of tellurium oxide for obtaining iodine-131 by dry distillation; Prueba de irradiacion de dioxido de telurio para obtener yodo-131 por destilacion seca

Energy Technology Data Exchange (ETDEWEB)

Alanis M, J. [ININ, Departamento de Materiales Radiactivos, 52045 Ocoyoacac, Estado de Mexico (Mexico)

2003-07-15

With the purpose of optimizing to the maximum independently the work of the reactor of those mathematical calculations of irradiation that are already optimized, now it corresponds to carry out irradiation tests in the different positions with their respective neutron fluxes that it counts the reactor for samples irradiation. Then, it is necessary to carry out the irradiation of the tellurium dioxide through cycles, with the purpose of observing the activity that it goes accumulating in each cycle and this way to obtain an activity of the Iodine-131 obtained when finishing the last cycle. (Author)

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Science.gov (United States)

Anspaugh, B. E.; Downing, R. G.

1984-01-01

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Growth of PbTe nanorods controlled by polymerized tellurium anions and metal(II) amides via composite-hydroxide-mediated approach

International Nuclear Information System (INIS)

Wan Buyong; Hu Chenguo; Liu Hong; Xiong Yufeng; Li Feiyun; Xi Yi; He Xiaoshan

2009-01-01

The pure face-centered-cubic PbTe nanorods have been synthesized by the composite-hydroxide-mediated approach using hydrazine as a reducing agent. The method is based on reaction among reactants in the melts of potassium hydroxide and sodium hydroxide eutectic at 170-220 deg. C and normal atmosphere without using any organic dispersant or surface-capping agent. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and energy dispersive X-ray spectroscopy were used to characterize the structure, morphology and composition of the samples. The diameters of nanorods are almost fixed, while the lengths can be tunable under different growth time and temperatures. The growth mechanism of PbTe nanorods is investigated via UV-vis absorption, demonstrating that polymerized tellurium anions and metal(II) amides in the hydrazine hydroxide melts could control the crystallization and growth process of PbTe nanostructures. The band gap of as-synthesized PbTe nanorods has been calculated based on UV-vis-NIR optical diffuse reflectance spectra data.

Growth of PbTe nanorods controlled by polymerized tellurium anions and metal(II) amides via composite-hydroxide-mediated approach

Energy Technology Data Exchange (ETDEWEB)

Wan Buyong [Department of Applied Physics, Chongqing University, 174 Shapingba Street, Chongqing 400044 (China); College of Physics and Information Technology, Chongqing Normal University, Chongqing 400047 (China); Hu Chenguo, E-mail: hucg@cqu.edu.cn [Department of Applied Physics, Chongqing University, 174 Shapingba Street, Chongqing 400044 (China); Liu Hong [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China); Xiong Yufeng [National Center for Nanoscience and Technology, Beijing 100080 (China); Li Feiyun; Xi Yi; He Xiaoshan [Department of Applied Physics, Chongqing University, 174 Shapingba Street, Chongqing 400044 (China)

2009-09-15

The pure face-centered-cubic PbTe nanorods have been synthesized by the composite-hydroxide-mediated approach using hydrazine as a reducing agent. The method is based on reaction among reactants in the melts of potassium hydroxide and sodium hydroxide eutectic at 170-220 deg. C and normal atmosphere without using any organic dispersant or surface-capping agent. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and energy dispersive X-ray spectroscopy were used to characterize the structure, morphology and composition of the samples. The diameters of nanorods are almost fixed, while the lengths can be tunable under different growth time and temperatures. The growth mechanism of PbTe nanorods is investigated via UV-vis absorption, demonstrating that polymerized tellurium anions and metal(II) amides in the hydrazine hydroxide melts could control the crystallization and growth process of PbTe nanostructures. The band gap of as-synthesized PbTe nanorods has been calculated based on UV-vis-NIR optical diffuse reflectance spectra data.

Effect of increasing tellurium content on the electronic and optical properties of cadmium selenide telluride alloys CdSe{sub 1-x}Te{sub x}: An ab initio study

Energy Technology Data Exchange (ETDEWEB)

Reshak, Ali Hussain, E-mail: maalidph@yahoo.co.uk [Institute of Physical Biology-South Bohemia University, Nove Hrady 37333 (Czech Republic); School of Material Engineering, Malaysia University of Perlis, P.O Box 77, d/a Pejabat Pos Besar, 01007 Kangar, Perlis (Malaysia); Kityk, I.V. [Electrical Engineering Department, Technical University of Czestochowa, Al. Armii Krajowej 17/19, Czestochowa (Poland); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique de la Matiere (LPQ3 M), universite de Mascara, Mascara 29000 (Algeria); Department of Physics and Astronomy, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Auluck, S. [National Physical Laboratory Dr. K S Krishnan Marg, New Delhi 110012 (India)

2011-06-16

Highlights: > Theoretical study of effect of vary Te content on band structure, density of states, linear and nonlinear optical susceptibilities of CdSe{sub 1-x}Te{sub x}. > Increasing Te content leads to a decrease in the energy band gap. > Significant enhancement of the electronic properties as a function of tellurium concentration - Abstract: An all electron full potential linearized augmented plane wave method, within a framework of GGA (EV-GGA) approach, has been used for an ab initio theoretical study of the effect of increasing tellurium content on the band structure, density of states, and the spectral features of the linear and nonlinear optical susceptibilities of the cadmium-selenide-telluride ternary alloys CdSe{sub 1-x}Te{sub x} (x = 0.0, 0.25, 0.5, 0.75 and 1.0). Our calculations show that increasing Te content leads to a decrease in the energy band gap. We find that the band gaps are 0.95 (1.76), 0.89 (1.65), 0.83 (1.56), 0.79 (1.44) and 0.76 (1.31) eV for x = 0.0, 0.25, 0.5, 0.75 and 1.0 in the cubic structure. As these alloys are known to have a wurtzite structure for x less than 0.25, the energy gaps are 0.8 (1.6) eV and 0.7 (1.55) eV for the wurtzite structure (x = 0.0, 0.25) for the GGA (EV-GGA) exchange correlation potentials. This reduction in the energy gaps enhances the functionality of the CdSe{sub 1-x}Te{sub x} alloys, at least for these concentrations, leading to an increase in the effective second-order susceptibility coefficients from 16.75 pm/V (CdSe) to 18.85 pm/V (CdSe{sub 0.75}Te{sub 0.25}), 27.23 pm/V (CdSe{sub 0.5}Te{sub 0.5}), 32.25 pm/V (CdSe{sub 0.25}Te{sub 0.75}), and 37.70 pm/V (CdTe) for the cubic structure and from 12.65 pm/V (CdSe) to 21.11 pm/V (CdSe{sub 0.75}Te{sub 0.25}) in the wurtzite structure. We find a nonlinear relationship between the absorption/emission energies and composition, and a significant enhancement of the electronic properties as a function of tellurium concentration. This variation will help in

A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

CERN Document Server

Vernon, S M

1999-01-01

This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

Enhancement of Thermoelectric Properties of PEDOT:PSS and Tellurium-PEDOT:PSS Hybrid Composites by Simple Chemical Treatment

Science.gov (United States)

Jin Bae, Eun; Hun Kang, Young; Jang, Kwang-Suk; Yun Cho, Song

2016-01-01

The thermoelectric properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and tellurium-PEDOT:PSS (Te-PEDOT:PSS) hybrid composites were enhanced via simple chemical treatment. The performance of thermoelectric materials is determined by their electrical conductivity, thermal conductivity, and Seebeck coefficient. Significant enhancement of the electrical conductivity of PEDOT:PSS and Te-PEDOT:PSS hybrid composites from 787.99 and 11.01 to 4839.92 and 334.68 S cm-1, respectively was achieved by simple chemical treatment with H2SO4. The power factor of the developed materials could be effectively tuned over a very wide range depending on the concentration of the H2SO4 solution used in the chemical treatment. The power factors of the developed thermoelectric materials were optimized to 51.85 and 284 μW m-1 K-2, respectively, which represent an increase of four orders of magnitude relative to the corresponding parameters of the untreated thermoelectric materials. Using the Te-PEDOT:PSS hybrid composites, a flexible thermoelectric generator that could be embedded in textiles was fabricated by a printing process. This thermoelectric array generates a thermoelectric voltage of 2 mV using human body heat.

Arsenic moiety in gallium arsenide is responsible for neuronal apoptosis and behavioral alterations in rats

International Nuclear Information System (INIS)

Flora, Swaran J.S.; Bhatt, Kapil; Mehta, Ashish

2009-01-01

Gallium arsenide (GaAs), an intermetallic semiconductor finds widespread applications in high frequency microwave and millimeter wave, and ultra fast supercomputers. Extensive use of GaAs has led to increased exposure to humans working in semiconductor industry. GaAs has the ability to dissociate into its constitutive moieties at physiological pH and might be responsible for the oxidative stress. The present study was aimed at evaluating, the principle moiety (Ga or As) in GaAs to cause neurological dysfunction based on its ability to cause apoptosis, in vivo and in vitro and if this neuronal dysfunction translated to neurobehavioral changes in chronically exposed rats. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased reactive oxygen species (ROS) and nitric oxide (NO) generation, both in vitro and in vivo. Increased ROS further caused apoptosis via mitochondrial driven pathway. Effects of oxidative stress were also confirmed based on alterations in antioxidant enzymes, GPx, GST and SOD in rat brain. We noted that ROS induced oxidative stress caused changes in the brain neurotransmitter levels, Acetylcholinesterase and nitric oxide synthase, leading to loss of memory and learning in rats. The study demonstrates for the first time that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress induced apoptosis in neuronal cells causing behavioral changes.

Platinum-group elements fractionation by selective complexing, the Os, Ir, Ru, Rh-arsenide-sulfide systems above 1020 °C

Science.gov (United States)

Helmy, Hassan M.; Bragagni, Alessandro

2017-11-01

The platinum-group element (PGE) contents in magmatic ores and rocks are normally in the low μg/g (even in the ng/g) level, yet they form discrete platinum-group mineral (PGM) phases. IPGE (Os, Ir, Ru) + Rh form alloys, sulfides, and sulfarsenides while Pt and Pd form arsenides, tellurides, bismuthoids and antimonides. We experimentally investigate the behavior of Os, Ru, Ir and Rh in As-bearing sulfide system between 1300 and 1020 °C and show that the prominent mineralogical difference between IPGE (+Rh) and Pt and Pd reflects different chemical preference in the sulfide melt. At temperatures above 1200 °C, Os shows a tendency to form alloys. Ruthenium forms a sulfide (laurite RuS2) while Ir and Rh form sulfarsenides (irarsite IrAsS and hollingworthite RhAsS, respectively). The chemical preference of PGE is selective: IPGE + Rh form metal-metal, metal-S and metal-AsS complexes while Pt and Pd form semimetal complexes. Selective complexing followed by mechanical separation of IPGE (and Rh)-ligand from Pt- and Pd-ligand associations lead to PGE fractionation.

Production and characterization Te-peptide by induced autolysis of Saccharomyces cerevisiae.

Science.gov (United States)

Morya, V K; Dong, Shin Jae; Kim, Eun-ki

2014-04-01

Recently, the interest in mimicking functions of chalcogen-based catalytic antioxidants like selenoenzymes, has been increased. Various attempts had been done with selenium, but very few attempts were carried out with tellurium. Bio-complex formation and characterization of tellurium was not tried earlier by using any organism. The present study was focused on tellurium peptide production, characterization, and bioactivity assessment especially Mimetic to glutathione peroxidase (GPx). The production was achieved by the autolysis of total proteins obtained from Saccharomyces cerevisiae ATCC 7752 grown with inorganic tellurium. The GPx-like activity of the hydrolyzed tellurium peptide was increased when prepared by autolysis, but decreased when prepared by acid hydrolysis. Tellurium peptide produced by autolysis of the yeast cell showed increased GPx-like activity as well as tellurium content. Tellurium peptide showed little toxicity, compared to highly toxic inorganic tellurium. The results showed the potential of tellurium peptide as an antioxidant that can be produced by simple autolysis of yeast cells.

Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

International Nuclear Information System (INIS)

Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

2014-01-01

Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

Comparative Analysis of Supply Risk-Mitigation Strategies for Critical Byproduct Minerals: A Case Study of Tellurium.

Science.gov (United States)

Bustamante, Michele L; Gaustad, Gabrielle; Alonso, Elisa

2018-01-02

Materials criticality assessment is a screening framework increasingly applied to identify materials of importance that face scarcity risks. Although these assessments highlight materials for the implicit purpose of informing future action, the aggregated nature of their findings make them difficult to use for guidance in developing nuanced mitigation strategy and policy response. As a first step in the selection of mitigation strategies, the present work proposes a modeling framework and accompanying set of metrics to directly compare strategies by measuring effectiveness of risk reduction as a function of the features of projected supply demand balance over time. The work focuses on byproduct materials, whose criticality is particularly important to understand because their supplies are inherently less responsive to market balancing forces, i.e., price feedbacks. Tellurium, a byproduct of copper refining, which is critical to solar photovoltaics, is chosen as a case study, and three commonly discussed byproduct-relevant strategies are selected: dematerialization of end-use product, byproduct yield improvement, and end-of-life recycling rate improvement. Results suggest that dematerialization will be nearly twice as effective at reducing supply risk as the next best option, yield improvement. Finally, due to its infrequent use at present and its dependence upon long product lifespans, recycling end-of-life products is expected to be the least effective option despite potentially offering other benefits (e.g., cost savings and environmental impact reduction).

Enrichment mechanisms of tellurium in ferromanganese crusts

Science.gov (United States)

Sakaguchi, A.; Sugiyama, T.; Usui, A.; Takahashi, Y.

2012-04-01

Marine ferromanganese crusts (FMCs) consist of iron (Fe) hydroxides and manganese (Mn) oxides with various minor and trace elements. Especially for tellurium (Te), which is recognized as one of the rare metals, it has been reported that this element is concentrated about 105 times in FMCs compared with earth's crust, and the host phase might be Fe (oxy)hydroxide (Hein et al., 2003). Actually, in our previous study, the high concentration of Te in very surface layers of FMCs was found from the top to halfway down of a seamount in the Pacific Ocean. However, the concentration of Te in surface layers through the seamount showed good correlation with that of Mn instead of Fe. In this study, we attempted to clarify the enrichment mechanism of Te in FMCs with some methods including X-ray absorption fine structure (XAFS) technique for synthesised /natural samples. Seventeen FMC samples were collected from the Takuyo-Daigo seamount, from 950 m (summit) to 3000 m in water depth, with hyper-dolphin (remotely operated vehicle) equipped with live video camera and manipulators. The growth rates of all FMC samples were estimated to be about 3 mm/Ma. Very surface layer (less than 1 mm) of all FMC was analyzed with XRD and XAFS to confirm the mineral composition and speciation of Te. Furthermore, to serve as an aid to clarify the adsorption mechanism of Te on FMCs, distribution coefficients (Kd) and oxidation states were determined through the adsorption experiments of Te(IV) and Te(VI) on ferrihydrite and δ-MnO2. In all the experiments, pH and ionic strength were adjusted to pH 7.5 and 0.7 M, respectively. The oxidation state of Te in water phase was determined with HPLC-ICP-MS. As for the analysis of oxidation and adsorption states on the solid phase, XAFS was employed. The major mineral composition of Fe and Mn had no significant variation through the water depth of Takuyo-Daigo seamount. The oxidation state of Te in all samples showed hexavalent, and there was no significant

Reaction of 1-bromo-3-chloropropane with tellurium and dimethyl telluride in the system of hydrazine hydrate-alkali; Reaktsiya 1-brom-3-khlorpropana s tellurom i dimetilditelluridom v sisteme gidrazin-gidrat-shcheloch'

Energy Technology Data Exchange (ETDEWEB)

Russavskaya, N V; Levanova, E P; Sukhomazova, Eh N; Grabel' nykh, V A; Elaev, A V; Klyba, L V; Zhanchipova, E R; Albanov, A I; Korotaeva, I M; Toryashinova, D S.D.; Korchevin, N A [SO RAN, Irkutskij Inst. Khimii imeni A.E. Favorskogo, Irkutsk (Russian Federation)

2006-05-15

A synthesis of oligomeric substance of thiocol type, the poly(trimethyleneditelluride), from 1-bromo-3-chloropropane and elemental tellurium is performed using a hydrazine hydrate-alkali system. Reductive splitting of the tellurocol followed by alkylation with methyl iodide give rise to preparation of bis(methyltelluro)propane, which was synthesized also from dimethyl telluride and 1,3-dihalopropanes using the N{sub 2}H{sub 4}{center_dot}H{sub 2}O/KOH system. The reaction products were characterized by elementary analysis, NMR, and IR spectra. Mass spectra of the synthesized low molecular weight organotellurium compounds are considered.

Acousto-optic control of internal acoustic reflection in tellurium dioxide crystal in case of strong elastic energy walkoff [Invited].

Science.gov (United States)

Voloshinov, Vitaly; Polikarpova, Nataliya; Ivanova, Polina; Khorkin, Vladimir

2018-04-01

Peculiar cases of acoustic wave propagation and reflection may be observed in strongly anisotropic acousto-optical crystals. A tellurium dioxide crystal serves as a prime example of such media, since it possesses record indexes of acoustic anisotropy. We studied one of the unusual scenarios of acoustic incidence and reflection from a free crystal-vacuum boundary in paratellurite. The directions of the acoustic waves in the (001) plane of the crystal were determined, and their basic characteristics were calculated. The carried-out acousto-optic experiment at the wavelength of light 532 nm and the acoustic frequency 73 MHz confirmed the theoretical predictions. The effects examined in the paper include the acoustic wave propagation with the record walkoff angle 74°. We also observed the incidence of the wave on the boundary at the angle exceeding 90°. Finally, we registered the close-to-back reflection of acoustic energy following the incidence. One of the stunning aspects is the distribution of energy between the incident and the back-reflected wave. The unusual features of the acoustic wave reflections pointed out in the paper are valuable for their possible applications in acousto-optic devices.

A laser system for the spectroscopy on highly charged ions, tellurium molecules, and Rydberg states of rubidium atoms; Ein Lasersystem zur Spektroskopie von hochgeladenen Ionen, Tellurmolekuelen und Rubidium-Rydberg-Zustaenden

Energy Technology Data Exchange (ETDEWEB)

Albrecht, Sebastian

2014-08-15

Optical measuring methods allow the detection and identification of the atomic structure with extraordinary precision. Deviations to theoretical predictions can indicate unknown physical effects. Therefore, precise measurements on the atomic structure continue to be of large relevance. In this work, a laser system for precision spectroscopy on Bismuth ({sup 209}Bi{sup 82+}), Tellurium ({sup 130}Te{sub 2}) and Rydberg states of Rubidium ({sup 85}Rb) has been built and characterized. Spectroscopic measurements on Tellurium and Rubidium have been achieved with this setup. The system consists of a two-stage frequency doubled diode laser, stabilized via a cavity and an RF-offsetlock to arbitrary wavelengths with absolute high stability. The setup of the laser system will be presented and the systematic error caused by the refractive index of air inside the transfer cavity will be discussed. A stability of better then 6.14 MHz at 244 nm is obtained for planned experiments on the ground state hyperfine splitting of {sup 209}Bi{sup 82+}. This will allow an increase in precision of more then four orders of magnitude for this measurement. Further increase in precision can be achieved by using an evacuated cavity. The obtained stability is measured by comparison of the laser frequency to absorption lines of Tellurium ({sup 130}Te{sub 2}). Eight reference lines, known from literature, spanning the region from 613720.717 GHz to 616803.545 GHz have been measured. The frequency measurements of three lines, coinciding with the emission spectrum of an argon-ion-laser, show deviations with respect to the published frequencies. Further inconsistencies in literature are cleared. Part of this work is also the precise measurement of 843 Doppler-free {sup 130}Te{sub 2} reference lines spanning the frequency range from 613881.150 GHz to 616614.258 GHz at a precision of better then 4 MHz for most lines. Additionally, measurements on electromagnetically induced transparency (EIT) using

Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

KAUST Repository

Anua, N. Najwa

2013-08-20

Exchange correlation (XC) energy functionals play a vital role in the efficiency of density functional theory (DFT) calculations, more soundly in the calculation of fundamental electronic energy bandgap. In the present DFT study of III-arsenides, we investigate the implications of XC-energy functional and corresponding potential on the structural, electronic and optical properties of XAs (X = B, Al, Ga, In). Firstly we report and discuss the optimized structural lattice parameters and the band gap calculations performed within different non-local XC functionals as implemented in the DFT-packages: WIEN2k, CASTEP and SIESTA. These packages are representative of the available code in ab initio studies. We employed the LDA, GGA-PBE, GGA-WC and mBJ-LDA using WIEN2k. In CASTEP, we employed the hybrid functional, sX-LDA. Furthermore LDA, GGA-PBE and meta-GGA were employed using SIESTA code. Our results point to GGA-WC as a more appropriate approximation for the calculations of structural parameters. However our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice agreement with the experimental measurements in addition to other theoretical results. © 2013 IOP Publishing Ltd.

Raman scattering boson peak and differential scanning calorimetry studies of the glass transition in tellurium-zinc oxide glasses.

Science.gov (United States)

Stavrou, E; Tsiantos, C; Tsopouridou, R D; Kripotou, S; Kontos, A G; Raptis, C; Capoen, B; Bouazaoui, M; Turrell, S; Khatir, S

2010-05-19

Raman scattering and differential scanning calorimetry (DSC) measurements have been carried out on four mixed tellurium-zinc oxide (TeO(2))(1 - x)(ZnO)(x) (x = 0.1, 0.2, 0.3, 0.4) glasses under variable temperature, with particular attention being given to the respective glass transition region. From the DSC measurements, the glass transition temperature T(g) has been determined for each glass, showing a monotonous decrease of T(g) with increasing ZnO content. The Raman study is focused on the low-frequency band of the glasses, the so-called boson peak (BP), whose frequency undergoes an abrupt decrease at a temperature T(d) very close to the respective T(g) values obtained by DSC. These results show that the BP is highly sensitive to dynamical effects over the glass transition and provides a means for an equally reliable (to DSC) determination of T(g) in tellurite glasses and other network glasses. The discontinuous temperature dependence of the BP frequency at the glass transition, along with the absence of such a behaviour by the high-frequency Raman bands (due to local atomic vibrations), indicates that marked changes of the medium range order (MRO) occur at T(g) and confirms the correlation between the BP and the MRO of glasses.

Raman scattering boson peak and differential scanning calorimetry studies of the glass transition in tellurium-zinc oxide glasses

International Nuclear Information System (INIS)

Stavrou, E; Tsiantos, C; Tsopouridou, R D; Kripotou, S; Kontos, A G; Raptis, C; Capoen, B; Bouazaoui, M; Turrell, S; Khatir, S

2010-01-01

Raman scattering and differential scanning calorimetry (DSC) measurements have been carried out on four mixed tellurium-zinc oxide (TeO 2 ) 1-x (ZnO) x (x = 0.1, 0.2, 0.3, 0.4) glasses under variable temperature, with particular attention being given to the respective glass transition region. From the DSC measurements, the glass transition temperature T g has been determined for each glass, showing a monotonous decrease of T g with increasing ZnO content. The Raman study is focused on the low-frequency band of the glasses, the so-called boson peak (BP), whose frequency undergoes an abrupt decrease at a temperature T d very close to the respective T g values obtained by DSC. These results show that the BP is highly sensitive to dynamical effects over the glass transition and provides a means for an equally reliable (to DSC) determination of T g in tellurite glasses and other network glasses. The discontinuous temperature dependence of the BP frequency at the glass transition, along with the absence of such a behaviour by the high-frequency Raman bands (due to local atomic vibrations), indicates that marked changes of the medium range order (MRO) occur at T g and confirms the correlation between the BP and the MRO of glasses.

On the study of proton-irradiated Tellurium targets relevant for production of medical radioisotopes 123I and 124I

International Nuclear Information System (INIS)

Imam Kambali; Hari Suryanto; Daya Agung Sarwono; Cahyana Amiruddin

2014-01-01

The energy loss distribution and range of energetic proton beams in tellurium (Te) target have been simulated using the Stopping and Range of Ion in Matter (SRIM 2013) codes. The calculated data of the proton's range were then used to determine the optimum thickness of Te targets for future production of 123 I and 124 I from 123 Te(p,n) 123 I, 124 Te(p,n) 124 I and 124 Te(p,2n) 123 I nuclear reactions using the BATAN's Cs-30 cyclotron. It was found that for an incidence angle of 0° with respect to the target normal, the optimum thickness of 123 Te and 124 Te targets for 123 I production should be 644 µm and 1.8 mm respectively, whereas a 649 µm thick 124 Te target would be Required for 124 I production. In addition, the thickness should be decreased with increasing incidence angle. The EOB yield could theoretically reach up to 13.62 Ci of 123 I at proton energy of 22 Me V and beam current of 30 µA if the 124 Te is irradiated over a period of 3 hours. The theoretical EOB yield is comparable to the experimental data with accuracy within 10%. (author)

Nematic fluctuations in iron arsenides NaFeAs and LiFeAs probed by 75As NMR

Science.gov (United States)

Toyoda, Masayuki; Kobayashi, Yoshiaki; Itoh, Masayuki

2018-03-01

75As NMR measurements have been made on single crystals to study the nematic state in the iron arsenides NaFeAs, which undergoes a structural transition from a high-temperature (high-T ) tetragonal phase to a low-T orthorhombic phase at Ts=57 K and an antiferromagnetic transition at TN=42 K, and LiFeAs having a superconducting transition at Tc=18 K. We observe the in-plane anisotropy of the electric field gradient η even in the tetragonal phase of NaFeAs and LiFeAs, showing the local breaking of tetragonal C4 symmetry. Then, η is found to obey the Curie-Weiss (CW) law as well as in Ba (Fe1-xCox) 2As2 . The good agreement between η and the nematic susceptibility obtained by electronic Raman spectroscopy indicates that η is governed by the nematic susceptibility. From comparing η in NaFeAs and LiFeAs with η in Ba (Fe1-xCox) 2As2 , we discuss the carrier-doping dependence of the nematic susceptibility. The spin contribution to nematic susceptibility is also discussed from comparing the CW terms in η with the nuclear spin-lattice relaxation rate divided by temperature 1 /T1T . Finally, we discuss the nematic transition in the paramagnetic orthorhombic phase of NaFeAs from the in-plane anisotropy of 1 /T1T .

Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy

Science.gov (United States)

Vanderhoef, Laura R.

Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from thermoelectrics to THz pulse generation. The small size of rare-earth nanoparticles suggests that interesting electronic properties might emerge as a result of both spatial confinement and surface states. However, ErAs nanoparticles do not exhibit any signs of quantum confinement or an emergent bandgap, and these experimental observations are understood from theory. The incorporation of other rare-earth monopnictide nanoparticles into III-V hosts is a likely path to engineering carrier excitation, relaxation and transport dynamics for optoelectronic device applications. However, the electronic structure of these other rare-earth monopnictide nanoparticles remains poorly understood. The objective of this research is to explore the electronic structure and optical properties of III-V materials containing novel rare-earth monopnictides. We use ultrafast pump-probe spectroscopy to investigate the electronic structure of TbAs nanoparticles in III-V hosts. We start with TbAs:GaAs, which was expected to be similar to ErAs:GaAs. We study the dynamics of carrier relaxation into the TbAs states using optical pump terahertz probe transient absorption spectroscopy. By analyzing how the carrier relaxation rates depend on pump fluence and sample temperature, we conclude that the TbAs states are saturable. Saturable traps suggest the existence of a bandgap for TbAs nanoparticles, in sharp contrast with previous results for ErAs. We then apply the same experimental technique to two samples of TbAs nanoparticles in InGaAs with different concentrations of TbAs. We observe similar relaxation dynamics associated with trap saturation, though the ability to resolve these processes is contingent upon a high enough TbAs concentration in the sample. We have also constructed an optical pump optical probe transient absorption

Tellurium sulfates from reactions in oleum and sulfur trioxide: syntheses and crystal structures of TeO(SO_4), Te_4O_3(SO_4)_5, and Te(S_2O_7)_2

International Nuclear Information System (INIS)

Logemann, Christian; Bruns, Joern; Schindler, Lisa Verena; Zimmermann, Vanessa; Wickleder, Mathias S.

2015-01-01

The reaction of K_2TeO_4 with fuming sulfuric acid (65 % SO_3) in sealed glass ampoules at 250 C led to colorless single crystals of TeO(SO_4) [triclinic, P anti 1, Z = 8, a = 819.89(3) pm, b = 836.95(4) pm, c = 1179.12(5) pm, α = 82.820(2) , β = 70.645(2) , γ = 81.897(2) , V = 753.11(6) x 10"6 pm"3]. A horseshoe type [Te_4O_3] fragment is the basic motif in the layer structure of the compound. The [Te_4O_3] moieties are linked to infinite chains by further oxide ions. Monomeric [Te_4O_3] horseshoes are found in the crystal structure of Te_4O_3(SO_4)_5 [trigonal, P3_221, Z = 3, a = 859.05(2) pm, c = 2230.66(7) pm, V = 1425.61(6) x 10"6 pm"3], which was obtained from TeO_2 and fuming sulfuric acid (65 % SO_3) at 200 C as colorless single crystals. By switching to neat SO_3 as reaction medium colorless crystals of Te(S_2O_7)_2 [P2_1/n, Z = 4, a = 1065.25(3) pm, b = 818.50(2) pm, c = 1206.27(3) pm, β = 102.097(1) , V = 1028.40(5) x 10"6 pm"3] form when ortho-telluric acid, H_6TeO_6, is used as the tellurium source. The compound was reported previously, however, obviously with a wrong crystallographic description. In the crystal structure the tellurium atoms are coordinated by two chelating disulfate ions. Further Te-O contacts link the [Te(S_2O_7)_2] units to an extended network. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Chemical processes for the extreme enrichment of tellurium into marine ferromanganese oxides

Science.gov (United States)

Kashiwabara, Teruhiko; Oishi, Yasuko; Sakaguchi, Aya; Sugiyama, Toshiki; Usui, Akira; Takahashi, Yoshio

2014-04-01

Tellurium, an element of growing economic importance, is extremely enriched in marine ferromanganese oxides. We investigated the mechanism of this enrichment using a combination of spectroscopic analysis and adsorption/coprecipitation experiments. X-ray Absorption Near-Edge Structure (XANES) analysis showed that in adsorption/coprecipitation systems, Te(IV) was oxidized on δ-MnO2 and not oxidized on ferrihydrite. Extended X-ray Absorption Fine Structure (EXAFS) analysis showed that both Te(IV) and Te(VI) were adsorbed on the surface of δ-MnO2 and ferrihydrite via formation of inner-sphere complexes. In addition, Te(VI) can be structurally incorporated into the linkage of Fe octahedra through a coprecipitation process because of its molecular geometry that is similar to the Fe octahedron. The largest distribution coefficient obtained in the adsorption/coprecipitation experiments was for the Te(VI)/ferrihydrite coprecipitation system, and it was comparable to those calculated from the distribution between natural ferromanganese oxides and seawater. Our XAFS and micro-focused X-ray fluorescence (μ-XRF) mapping of natural ferromanganese oxides showed that Te was structurally incorporated as Te(VI) in Fe (oxyhydr)oxide phases. We conclude that the main process for the enrichment of Te in ferromanganese oxides is structural incorporation of Te(VI) into Fe (oxyhydr)oxide phases through coprecipitation. This mechanism can explain the unique degree of enrichment of Te compared with other oxyanions, which are mainly enriched via adsorption on the surface of the solid structures. In particular, the great contrast in the distributions of Te and Se is caused by their oxidized species: (i) the similar geometry of the Te(VI) molecule to Fe octahedron, and (ii) quite soluble nature of Se(VI). Coexisting Mn oxide phases may promote structural incorporation of Te(VI) by oxidation of Te(IV), although the surface oxidation itself may not work as the critical enrichment process as

A novel wide range, real-time neutron fluence monitor based on commercial off the shelf gallium arsenide light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, B., E-mail: bhaskar.mukherjee@uk-essen.de [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany); Hentschel, R. [Strahlenklinik, University Hospital Essen (Germany); Lambert, J. [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany); Deya, W. [Strahlenklinik, University Hospital Essen (Germany); Farr, J. [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany)

2011-10-01

Displacement damage produced by high-energy neutrons in gallium arsenide (GaAs) light emitting diodes (LED) results in the reduction of light output. Based on this principle we have developed a simple, cost effective, neutron detector using commercial off the shelf (COTS) GaAs-LED for the assessment of neutron fluence and KERMA at critical locations in the vicinity of the 230 MeV proton therapy cyclotron operated by Westdeutsches Protonentherapiezentrum Essen (WPE). The LED detector response (mV) was found to be linear within the neutron fluence range of 3.0x10{sup 8}-1.0x10{sup 11} neutron cm{sup -2}. The response of the LED detector was proportional to neutron induced displacement damage in LED; hence, by using the differential KERMA coefficient of neutrons in GaAs, we have rescaled the calibration curve for two mono-energetic sources, i.e. 1 MeV neutrons and 14 MeV neutrons generated by D+T fusion reaction. In this paper we present the principle of the real-time GaAs-LED based neutron fluence monitor as mentioned above. The device was calibrated using fast neutrons produced by bombarding a thick beryllium target with 14 MeV deuterons from a TCC CV 28 medical cyclotron of the Strahlenklinik University Hospital Essen.

Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions.

Science.gov (United States)

Ramos-Ruiz, Adriana; Wilkening, Jean V; Field, James A; Sierra-Alvarez, Reyes

2017-08-15

A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1mgL -1 ), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005mgL -1 ). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. Copyright © 2017 Elsevier B.V. All rights reserved.

Formation of tellurium nanocrystals during anaerobic growth of bacteria that use Te oxyanions as respiratory electron acceptors

Science.gov (United States)

Baesman, S.M.; Bullen, T.D.; Dewald, J.; Zhang, Dongxiao; Curran, S.; Islam, F.S.; Beveridge, T.J.; Oremland, R.S.

2007-01-01

Certain toxic elements support the metabolism of diverse prokaryotes by serving as respiratory electron acceptors for growth. Here, we demonstrate that two anaerobes previously shown to be capable of respiring oxyanions of selenium also achieve growth by reduction of either tellurate [Te(VI)] or tellurite [Te(IV)] to elemental tellurium [Te(0)]. This reduction achieves a sizeable stable-Te-isotopic fractionation (isotopic enrichment factor [??] = -0.4 to -1.0 per ml per atomic mass unit) and results in the formation of unique crystalline Te(0) nanoarchitectures as end products. The Te(0) crystals occur internally within but mainly externally from the cells, and each microorganism forms a distinctly different structure. Those formed by Bacillus selenitireducens initially are nanorods (???10-nm diameter by 200-nm length), which cluster together, forming larger (???1,000-nm) rosettes composed of numerous individual shards (???100-nm width by 1,000-nm length). In contrast, Sulfurospirillium barnesii forms extremely small, irregularly shaped nanospheres (diameter < 50 nm) that coalesce into larger composite aggregates. Energy-dispersive X-ray spectroscopy and selected area electron diffraction indicate that both biominerals are composed entirely of Te and are crystalline, while Raman spectroscopy confirms that they are in the elemental state. These Te biominerals have specific spectral signatures (UV-visible light, Raman) that also provide clues to their internal structures. The use of microorganisms to generate Te nanomaterials may be an alternative for bench-scale syntheses. Additionally, they may also generate products with unique properties unattainable by conventional physical/chemical methods. Copyright ?? 2007, American Society for Microbiology. All Rights Reserved.

Resonant ionization by laser beams: application to ions sources and to study the nuclear structure of radioactive tellurium isotopes

International Nuclear Information System (INIS)

Sifi, R.

2007-07-01

The radioactive ion beams that are produced through current isotope separators are well separated according to the A mass but not according to the Z parameter. The resonant ionization through laser beams applied to ion sources allows the production of radioactive ion beam in a very selective and efficient way by eliminating the isobaric contamination. The first chapter is dedicated to the resonant ionization by laser beams, we describe the principle, the experimental setting, the lasers used, the ionization schemes and the domain of application. The second chapter deals with the application of resonant ionization to laser ion sources for the production of radioactive ion beams. We present experimental tests performed for getting copper ion beams. Resonant ionization through laser is also used in the spectroscopy experiments performed at the Isolde (isotope separation on-line device) installation in CERN where more than 20 elements are ionized very efficiently. The technique is based on a frequency scanning around the excitation transition of the atoms in order to probe the hyperfine structure. Laser spectroscopy allows the determination of the hyperfine structure as well as the isotopic shift of atoms. In the third chapter the method is applied to the spectroscopy of tellurium atoms. First, we define the 2 parameters on which the extraction is based: charge radius and nuclear moments, then we present several theoretical models that we have used to assess our experimental results. (A.C.)

Electrical properties of tellurium clusters on the void sublattice of an opal crystal the important role played by the Te-SiO$_{2}$ interface

CERN Document Server

Berezovets, V A; Farbshtein, I I; Nizhankovskii, V I

2002-01-01

The temperature dependences of electrical resistivity and of the Hall effect of nanocluster tellurium crystals obtained by filling the voids in a dielectric (opal) matrix with a melt of pure and doped Te were studied. The Hall hole concentration p/sub eff/ was found to increase anomalously (by more than two orders of magnitude) in a sample prepared from pure Te and cooled to helium temperatures. At T = 1.45 K, the hole concentration in this sample was p/sub eff/ = equivalent to 6 * 10/sup 17/ cm/sup -3/. At the same time, the Hall effect in this sample was observed to reverse sign at T equivalent to 200 K from positive for T < 200 K to negative at higher temperatures. This implies a low impurity concentration (N/sub A/ is less than at least 10/sup 15/ cm/sup -3/). A nanocluster crystal of doped Te does not exhibit this anomaly; here, we have p/sub eff/ equivalent to 6 * 10/sup 17/ cm/sup -3/ throughout the temperature region covered, as in the original Te. These features are assigned to the formation of a ...

Organotellurium ligands – designing and complexation reactions

Indian Academy of Sciences (India)

Unknown

membered rings it is negative and ~30 ppm only. Keywords. Organotellurium ligands; hybrid telluroether; platinum metal complexes; tellurium-125 NMR. 1. Introduction. Tellurium is the noblest metalloid which may act as a Lewis acid as well as Lewis base. The ligand chemistry of tellurium, which acts as a 'soft' donor, was ...

Study by optical spectroscopy of the interaction between a hydrogen multi-polar plasma and a gallium arsenide surface

International Nuclear Information System (INIS)

Ferdinand, Robin

1990-01-01

The objective of this research thesis has been to understand which are the involved species during the deoxidation-passivation stage of the processing of gallium arsenide platelets used in semiconductor industry. The author describes problems related to the presence of oxides, and highlights the benefit of using a hydrogen multi-polar plasma to softly remove surface oxides. The experimental set-up is notably characterised by the role of magnetic confinement and its influence on plasma. A theoretical model is then developed for a better understanding of chemical and physical-chemical reactions occurring in the hydrogen plasma. Based on the use of the Boltzmann equation, the model calculates the electron energy distribution function, and allows the follow-up of species present in the plasma with respect to available and accessible parameters (pressure, discharge current, discharge voltage). A spectroscopic study of the hydrogen plasma is then reported, and the numerical model is validated by interpreting line shapes of the hydrogen Balmer series. A second experimental approach, based on electrostatic probes, is implemented, and the Laframboise theory is applied to this technique and allows electronic and ionic densities, and electron temperature to be determined. Experimental and numerical results are compared. All this leads to the study of the interaction of plasma with a sample, with a first step of study of a mixture plasma containing 85 per cent of hydrogen and 15 per cent of arsine, in order to get a general knowledge of emissions related to the presence of AsH 3 . Finally, interaction studies are performed by using laser-induced fluorescence and conventional space-resolved optical spectroscopy

Effect of composition on the degree of anisotropy of thermal expansion and electric resistance of cermet specimens of GeTe

International Nuclear Information System (INIS)

Barbakadze, K.G.; Vekua, T.S.; Ioseliani, M.I.; Kvitsiniya, K.M.

1988-01-01

A study was made on α temperature coefficient of thermal expansion and ρ specific electric resistance of cermet germanium telluride for alloys close to stoichiometric composition. It is shown that anisotropy of thermal expansion of cermet germanium telluride depends sufficiently on its composition. This dependence is clearly pronounced if tellurium content in alloys equals 50.4-51.2 at.%. The maximal anisotropy is observed in the alloy containing 50.8 at.% of tellurium. The temperature of extreme value of temperature coefficient of linear expansion decreases from 440 down to 373 deg.C for alloys with 49-50.8 at.% of tellurium, and grows from 373 up to 405 deg.C if tellurium content equals 50.8-52 at.%

Evolution of magnetic and superconducting phases with doping and pressure in the underdoped iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Hassinger, Elena [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada); Max Planck Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Gredat, Gregory; Valade, Fabrice; Rene de Cotret, Samuel; Juneau-Fecteau, Alexandre; Reid, Jean-Philippe; Doiron-Leyraud, Nicolas [Universite de Sherbrooke, Quebec (Canada); Kim, H.; Tanatar, Makariy A.; Prozorov, Ruslan [Ames Laboratory, Ames, Iowa (United States); Shen, B.; Wen, H.H. [Nanjing University (China); Taillefer, Louis [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada)

2015-07-01

The electrical resistivity ρ of the iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2} was measured in applied pressures up to 2.75 GPa for seven underdoped samples. Six of them are antiferromagnetic at P = 0 with 0.16 < x < 0.24 and one is non-magnetic with x = 0.26. The stripe-like antiferromagnetic ordering temperature T{sub N}, detected as a sharp anomaly in ρ(T), decreases linearly with pressure. For every magnetic sample a second phase appears with pressure at a lower temperature T{sub 0}, which rises with pressure. The critical pressure above which this phase appears decreases with doping going to zero for x = 0.24 just below the critical doping for the magnetic phase. This behaviour is reminiscent of the second magnetic phase appearing in Ba{sub 0.76}Na{sub 0.24}Fe{sub 2}As{sub 2} where the tetragonal symmetry is restored in favour of the scenario in which the nematic order in the iron pnictides is of magnetic origin.

Biological monitoring of arsenic exposure of gallium arsenide- and inorganic arsenic-exposed workers by determination of inorganic arsenic and its metabolites in urine and hair

Energy Technology Data Exchange (ETDEWEB)

Yamauchi, H.; Takahashi, K.; Mashiko, M.; Yamamura, Y. (St. Marianna Univ. School of Medicine, Kawasaki (Japan))

1989-11-01

In an attempt to establish a method for biological monitoring of inorganic arsenic exposure, the chemical species of arsenic were measured in the urine and hair of gallium arsenide (GaAs) plant and copper smelter workers. Determination of urinary inorganic arsenic concentration proved sensitive enough to monitor the low-level inorganic arsenic exposure of the GaAs plant workers. The urinary inorganic arsenic concentration in the copper smelter workers was far higher than that of a control group and was associated with high urinary concentrations of the inorganic arsenic metabolites, methylarsonic acid (MAA) and dimethylarsinic acid (DMAA). The results established a method for exposure level-dependent biological monitoring of inorganic arsenic exposure. Low-level exposures could be monitored only by determining urinary inorganic arsenic concentration. High-level exposures clearly produced an increased urinary inorganic arsenic concentration, with an increased sum of urinary concentrations of inorganic arsenic and its metabolites (inorganic arsenic + MAA + DMAA). The determination of urinary arsenobetaine proved to determine specifically the seafood-derived arsenic, allowing this arsenic to be distinguished clearly from the arsenic from occupational exposure. Monitoring arsenic exposure by determining the arsenic in the hair appeared to be of value only when used for environmental monitoring of arsenic contamination rather than for biological monitoring.

Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

International Nuclear Information System (INIS)

Thomas, Tegan; Blackman, Christopher S.; Parkin, Ivan P.; Carmalt, Claire J.

2013-01-01

Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl 4 or VOCl 3 with t BuAsH 2 . Using the vanadium precursor VCl 4 , films were deposited at substrate temperatures of 550–600 °C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl 3 as the vanadium source resulted in films being deposited between 450 and 600 °C and, unlike when using VCl 4 , were silver in appearance. The films deposited using VOCl 3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. - Highlights: • Formation of VAs films via atmospheric pressure chemical vapour deposition. • Films formed using VCl 4 or VOCl 3 and t BuAsH 2 . • Powder X-ray diffraction showed that crystalline VAs films were deposited. • Films from VOCl 3 had a V:As ratio close to 1 with negligible Cl incorporation. • Films were silver and possessed borderline metallic/semiconductor resistivities

Native copper in Permian Mudstones from South Devon: A natural analogue of copper canisters for high-level radioactive waste

International Nuclear Information System (INIS)

Milodowski, A.E.; Styles, M.T.; Werme, L.; Oversby, V.M.

2001-01-01

Native copper (>99.9% Cu) sheets associated with complex uraniferous and vanadiferous concretions in Upper Permian Mudstones from south Devon (United Kingdom) have been studied as a 'natural analogue' for copper canisters designed to be used in the isolation of spent fuel and high-level radioactive wastes (HLW) for deep geological disposal. Detailed analysis demonstrates that the copper formed before the mudstones were compacted. The copper displays complex corrosion and alteration. The earliest alteration was to copper oxides, followed sequentially by the formation of copper arsenides, nickel arsenide and copper sulphide, and finally nickel arsenide accompanied by nickel-copper arsenide, copper arsenide and uranium silicates. Petrographic observations demonstrate that these alteration products also formed prior to compaction. Consideration of the published history for the region indicates that maximum compaction of the rocks will have occurred by at least the Lower Jurassic (i.e. over 176 Ma ago). Since that time the copper sheets have remained isolated by the compacted mudstones and were unaffected by further corrosion until uplift and exposure to present-day surface weathering

Tellurium sulfates from reactions in oleum and sulfur trioxide: syntheses and crystal structures of TeO(SO{sub 4}), Te{sub 4}O{sub 3}(SO{sub 4}){sub 5}, and Te(S{sub 2}O{sub 7}){sub 2}

Energy Technology Data Exchange (ETDEWEB)

Logemann, Christian; Bruns, Joern; Schindler, Lisa Verena; Zimmermann, Vanessa; Wickleder, Mathias S. [Carl von Ossietzky University of Oldenburg, Institute of Chemistry (Germany)

2015-04-15

The reaction of K{sub 2}TeO{sub 4} with fuming sulfuric acid (65 % SO{sub 3}) in sealed glass ampoules at 250 C led to colorless single crystals of TeO(SO{sub 4}) [triclinic, P anti 1, Z = 8, a = 819.89(3) pm, b = 836.95(4) pm, c = 1179.12(5) pm, α = 82.820(2) , β = 70.645(2) , γ = 81.897(2) , V = 753.11(6) x 10{sup 6} pm{sup 3}]. A horseshoe type [Te{sub 4}O{sub 3}] fragment is the basic motif in the layer structure of the compound. The [Te{sub 4}O{sub 3}] moieties are linked to infinite chains by further oxide ions. Monomeric [Te{sub 4}O{sub 3}] horseshoes are found in the crystal structure of Te{sub 4}O{sub 3}(SO{sub 4}){sub 5} [trigonal, P3{sub 2}21, Z = 3, a = 859.05(2) pm, c = 2230.66(7) pm, V = 1425.61(6) x 10{sup 6} pm{sup 3}], which was obtained from TeO{sub 2} and fuming sulfuric acid (65 % SO{sub 3}) at 200 C as colorless single crystals. By switching to neat SO{sub 3} as reaction medium colorless crystals of Te(S{sub 2}O{sub 7}){sub 2} [P2{sub 1}/n, Z = 4, a = 1065.25(3) pm, b = 818.50(2) pm, c = 1206.27(3) pm, β = 102.097(1) , V = 1028.40(5) x 10{sup 6} pm{sup 3}] form when ortho-telluric acid, H{sub 6}TeO{sub 6}, is used as the tellurium source. The compound was reported previously, however, obviously with a wrong crystallographic description. In the crystal structure the tellurium atoms are coordinated by two chelating disulfate ions. Further Te-O contacts link the [Te(S{sub 2}O{sub 7}){sub 2}] units to an extended network. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

Science.gov (United States)

Adams, Aaron Lee

Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging

Local order in molten Sesub(1-x)Tesub(x)

International Nuclear Information System (INIS)

Bellissent, R.; Tourand, G.

1980-04-01

In this paper a study of the short range order and of the coordination number in liquid Selenium-Tellurium systems is presented. The first part deals with neutron diffraction measurements of the structure factors of liquid Sesub(1-x)Tesub(x) in the whole concentration range, at 475 C, performed at EL3 reactor in Saclay using a 640 cell multidetector. From these data the radial distribution functions have been calculated. In a second part a structural model based on random chains for Selenium and on a quasicrystalline behavior of Tellurium is presented. For Se-rich melts it is assumed that Tellurium enters the Selenium chains by substitution. In the Te-rich range it is assumed that the local order is represented by substituted SeTe chains in a Tellurium matrix. This model provides with a good representation of the various structure factors. Moreover the coordination number for each concentration in the model has been calculated and the results are consistent with the experimental data. The 2 fold coordination of Se and the 3 valency of Te in the liquid state are emphasized and they can be associated with the metallisation of liquid Tellurium whereas Selenium remains a semiconductor

Contact-resonance atomic force microscopy for nanoscale elastic property measurements: Spectroscopy and imaging

International Nuclear Information System (INIS)

Stan, G.; Krylyuk, S.; Davydov, A.V.; Vaudin, M.D.; Bendersky, L.A.; Cook, R.F.

2009-01-01

Quantitative measurements of the elastic modulus of nanosize systems and nanostructured materials are provided with great accuracy and precision by contact-resonance atomic force microscopy (CR-AFM). As an example of measuring the elastic modulus of nanosize entities, we used the CR-AFM technique to measure the out-of-plane indentation modulus of tellurium nanowires. A size-dependence of the indentation modulus was observed for the investigated tellurium nanowires with diameters in the range 20-150 nm. Over this diameter range, the elastic modulus of the outer layers of the tellurium nanowires experienced significant enhancement due to a pronounced surface stiffening effect. Quantitative estimations for the elastic moduli of the outer and inner parts of tellurium nanowires of reduced diameter are made with a core-shell structure model. Besides localized elastic modulus measurements, we have also developed a unique CR-AFM imaging capability to map the elastic modulus over a micrometer-scale area. We used this CR-AFM capability to construct indentation modulus maps at the junction between two adjacent facets of a tellurium microcrystal. The clear contrast observed in the elastic moduli of the two facets indicates the different surface crystallography of these facets.

β-Telluroacroleins and β-tellurovinyl ketones: synthesis, reactions and structure

International Nuclear Information System (INIS)

Sadekov, I.D.

2002-01-01

Data on synthesis, reactivity, spectral characteristics and structure of new telluroorganic synthons, i.e. β-tellurovinylcarbonyl compounds, were generalized and systematized. Synthesis and reactions of β-telluroacroleins and similar cations were considered individually for each type of β-tellurovinylcarbonyl compounds. Special attention was paid to the use of the compounds for preparing tellurium-containing heterocycles. Reactions characteristics of carbonyl groups and tellurium-containing substituents, as well as transformation, as a result of which β-tellurovinylcarbonyl compounds and products of their reactions form tellurium-containing heterocycles, were discussed [ru

Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

Science.gov (United States)

2007-06-01

models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

a Positron 2D-ACAR Study of the Silicon-Dioxide Interface and the Point Defects in the Semi-Insulating Gallium Arsenide

Science.gov (United States)

Peng, Jianping

The SiO_2-Si system has been the subject of extensive study for several decades. Particular interest has been paid to the interface between Si single crystal and the amorphous SiO_2 which determines the properties and performances of devices. This is significant because of the importance of Si technology in the semiconductor industry. The development of the high-intensity slow positron beam at Brookhaven National Laboratory make it possible to study this system for the first time using the positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique. 2D-ACAR is a well established and is a non-destructive microscopic probe for studying the electronic structure of materials, and for doing the depth-resolved measurements. Some unique information was obtained from the measurements performed on the SiO_2-Si system: Positronium (Ps) atoms formation and trapping in microvoids in both oxide and interface regions; and positron annihilation at vacancy-like defects in the interface region which can be attributed to the famous Pb centers. The discovery of the microvoids in the interface region may have some impact on the fabrication of the next generation electronic devices. Using the conventional 2D-ACAR setup with a ^{22}Na as positron source, we also studied the native arsenic (As) vacancy in the semi -insulating gallium-arsenide (SI-GaAs), coupled with in situ infrared light illumination. The defect spectrum was obtained by comparing the spectrum taken without photo -illumination to the spectrum taken with photo-illumination. The photo-illumination excited electrons from valence band to the defect level so that positrons can become localized in the defects. The two experiments may represent a new direction of the application of positron 2D-ACAR technique on the solid state physics and materials sciences.

Polarized electron sources

Energy Technology Data Exchange (ETDEWEB)

Prepost, R. [Univ. of Wisconsin, Madison, WI (United States)

1994-12-01

The fundamentals of polarized electron sources are described with particular application to the Stanford Linear Accelerator Center. The SLAC polarized electron source is based on the principle of polarized photoemission from Gallium Arsenide. Recent developments using epitaxially grown, strained Gallium Arsenide cathodes have made it possible to obtain electron polarization significantly in excess of the conventional 50% polarization limit. The basic principles for Gallium and Arsenide polarized photoemitters are reviewed, and the extension of the basic technique to strained cathode structures is described. Results from laboratory measurements of strained photocathodes as well as operational results from the SLAC polarized source are presented.

Polarized electron sources

International Nuclear Information System (INIS)

Prepost, R.

1994-01-01

The fundamentals of polarized electron sources are described with particular application to the Stanford Linear Accelerator Center. The SLAC polarized electron source is based on the principle of polarized photoemission from Gallium Arsenide. Recent developments using epitaxially grown, strained Gallium Arsenide cathodes have made it possible to obtain electron polarization significantly in excess of the conventional 50% polarization limit. The basic principles for Gallium and Arsenide polarized photoemitters are reviewed, and the extension of the basic technique to strained cathode structures is described. Results from laboratory measurements of strained photocathodes as well as operational results from the SLAC polarized source are presented

New studies on mustard gold from the Dongping Mines, Hebei Province, China: The tellurian, plumbian, manganoan and mixed varieties

DEFF Research Database (Denmark)

Li, Jiuling; Makovicky, Emil

2001-01-01

geologi, Dongping gold tellurite deposit, mustard gold, calaverite, Fe-Pb-Te minerals, alteration, tellurium, filling in micro-porous, composite varieties, particles of gold......geologi, Dongping gold tellurite deposit, mustard gold, calaverite, Fe-Pb-Te minerals, alteration, tellurium, filling in micro-porous, composite varieties, particles of gold...

Reactions of newly formed fission products in the gas phase

International Nuclear Information System (INIS)

Strickert, R.G.

1976-01-01

A dynamic gas-flow system was constructed which stopped fission products in the gas phase and rapidly separated (in less than 2 sec) volatile compounds from non-volatile ones. The filter assembly designed and used was shown to stop essentially all non-volatile fission products. Between 5 percent and 20 percent of tellurium fission-product isotopes reacted with several hydrocarbon gases to form volatile compounds, which passed through the filter. With carbon monoxide gas, volatile tellurium compound(s) (probably TeCO) were also formed with similar efficiencies. The upper limits for the yields of volatile compounds formed between CO and tin and antimony fission products were shown to be less than 0.3 percent, so tellurium nuclides, not their precursors, reacted with CO. It was found that CO reacted preferentially with independently produced tellurium atoms; the reaction efficiency of beta-produced atoms was only 27 +- 3 percent of that of the independently formed atoms. The selectivity, which was independent of the over-all reaction efficiency, was shown to be due to reaction of independently formed atoms in the gas phase. The gas phase reactions are believed to occur mainly at thermal energies because of the independence of the yield upon argon moderator mole-fraction (up to 80 percent). It was shown in some experiments that about one-half of the TeCO decomposed in passing through a filter and that an appreciable fraction (approximately 20 percent) of the tellurium atoms deposited on the filter reacted agin with CO. Other tellurium atoms on the filter surface (those formed by beta decay and those formed independently but not reacting in the gas phase) also reacted with CO, but probably somewhat less efficiently than atoms formed by TeCO decomposition. No evidence was found for formation of TeCO as a direct result of beta-decay

Iodine-131 production by a dry method using reactor-irradiated elementary tellurium. Part 1 - Conditions for obtaining iodine emanation and its capture. Part 2 - comparative study of preparation conditions using Pyrex, stainless steel and alumina equipment. Part 3 - production on a semi-industrial scale; Production de l'iode 131 par voie seche a partir de tellure elementaire irradie a la pile. 1ere partie - Etudes des conditions pour obtenir l'emanation de l'iode et le capter. 2eme partie - Etude comparee des conditions pour effectuer cette preparation avec des appareils en Pyrex, en acier inoxydable et en alumine. 3eme partie - production a l'echelle semi-industrielle

Energy Technology Data Exchange (ETDEWEB)

Bardy, A; Beydon, J; Murthy, T S; Doyen, J B; Lefrancois, J [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1967-04-15

A previous report has described how iodine 131 can be prepared from elementary tellurium by a dry method which consists in treating irradiated tellurium at 400 degrees in argon. The possibility of carrying out this treatment in a stainless steel or alumina apparatus has been considered. The behavior of gaseous iodine 131 towards these materials has thus been studied. If the adsorption of iodine on stainless steel is superficial desorption is rapid at 250 degrees in oxygen or 400 degrees in argon. If the adsorption is chemical in nature it becomes necessary to heat to higher temperatures. Adsorption of iodine on alumina is very weak and the iodine can be desorbed rapidly. With these materials tests have been carried out on 300 gms of tellurium containing 41 curies of iodine 131; the yields were very satisfactory ( 98 per cent). (author) [French] La methode de preparation de l iode 131 par voie seche a partir de tellure elementaire decrite dans un precedent rapport consiste a traiter le tellure irradie a 400 degres sous argon. Nous avons examine la possibilite d effectuer ce traitement dans un appareil en acier inoxidable ou en alumine. Le comportement de l iode 131 gazeux vis a vis de ces materiaux a donc ete etudie. Si l adsorption de l iode sur l acier inoxidable est superficielle la desorption est rapide a 250 degres sous oxygene ou 400 degres sous argon. Si la fixation est de nature chimique il est necessaire de chauffer a des temperatures plus elevees. L adsorption de l iode sur l alumine est res faible et l iode peut etre desorbe rapideemnt. En employant ces materiaux des essais ont ete obtenus sur 300 g de tellure contenant 41 curies d iode 131 avec un bon rendement (98 pour cent). (auteur00.

Micro-Raman spectroscopy studies of bulk and thin films of CuInTe2

International Nuclear Information System (INIS)

Ananthan, M R; Mohanty, Bhaskar Chandra; Kasiviswanathan, S

2009-01-01

Micro-Raman spectroscopy measurements were made on polycrystalline and amorphous thin films of CuInTe 2 as well as bulk polycrystalline CuInTe 2 . Various vibrational modes exhibited by the bulk and polycrystalline thin films were attributed to those expected for single crystal CuInTe 2 . Raman spectra of amorphous films presented a broad spectrum, decomposition of which revealed the presence of elemental tellurium on the film surface. Laser-induced changes on CuInTe 2 thin films were studied by acquiring spectra with higher laser beam power. Modes due to tellurium appeared when the spectra were acquired during laser–sample interaction, indicating tellurium segregation. The Raman spectra measured from polycrystalline films during high laser power irradiation did not show decrease in the intensity of the A 1 mode of CuInTe 2 in spite of loss of tellurium from the lattice. This has been interpreted as related to an increased contribution from the undistorted subsurface CuInTe 2 region at higher excitation power

Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

Science.gov (United States)

Kallaher, Raymond L.

This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

Lasing transition at 1.06 μm emission in Nd3+ -doped borate-based tellurium calcium zinc niobium oxide glasses for high-power solid-state lasers.

Science.gov (United States)

Ravi, O; Prasad, K; Jain, Rajiv; Venkataswamy, M; Chaurasia, Shivanand; Deva Prasad Raju, B

2017-08-01

The spectroscopic properties of Tellurium Calcium Zinc Niobium oxide Borate (TCZNB) glasses of composition (in mol%) 10TeO 2  + 15CaO + 5ZnO + 10 Nb 2 O 5  + (60 - x)B 2 O 3  + Nd 2 O 3 (x = 0.1, 0.5, 1.0 or 1.5 mol%) have been investigated experimentally. The three phenomenological intensity parameters Ω 2 , Ω 4, Ω 6 have been calculated using the Judd-Ofelt theory and in turn radiative properties such as radiative transition probabilities, emission cross-sections, branching ratios and radiative lifetimes have been estimated. The trend found in the JO intensity parameter is Ω 2  > Ω 6  > Ω 4 If Ω 6  > Ω 4 , the glass system is favourable for the laser emission 4 F 3 /2  →  4 I 11 /2 in the infrared (IR) wavelength. The experimental values of branching ratio of 4 F 3 /2  →  4 I 11 /2 transition indicate favourable lasing action with low threshold power. The evaluated total radiative transition probabilities (A T ), stimulated emission cross-section (σ e ) and gain bandwidth parameters (σ e  × Δλ p ) were compared with earlier reports. An energy level analysis has been carried out considering the experimental energy positions of the absorption and emission bands. Copyright © 2016 John Wiley & Sons, Ltd.

Interdigitated Back-Surface-Contact Solar Cell Modeling Using Silvaco Atlas

Science.gov (United States)

2015-06-01

and Gallium Arsenide, and triple -junction cells with Indium Gallium Phosphide, Gallium Arsenide, and Germanium. Work was also done by Fotis [4] on...output power at various points on the IV curve, from [15]. ............................18 Figure 15. IV curve with the MPP. The orange area is...53 Figure 35. Simulation results of cell power output at maximum power point for varying bulk thicknesses

Synthesis and reactivity of 10-alkylphenotellurazines

International Nuclear Information System (INIS)

Sadekov, I.D.; Abakarov, G.M.; Panov, V.B.; Ukhin, L.Yu.; Garnovskii, A.D.; Minkin, V.I.

1985-01-01

The reaction of N-alkyl-2,2'-dilithium diphenylamines with tellurium diiodide yields derivatives of a new heterocyclic system, phenotellurazine. 10-Alkyl-phenotellurazines readily form derivatives containing tetra- and tricoordinated tellurium, form complexes with metal salts and rhodium(I) carbonyl chloride and by bromination and nitration give 3,7-dibromo- or 3-nitro-, 3,7-dinitro, and 1,3,7,9-tetranitro derivatives

Radionuclides in diffusion probing of inorganic materials based on chalcogenides

International Nuclear Information System (INIS)

Firsova, L.P.

1994-01-01

Migration of tellurium-125m, selenium-75, sulfur-35 radionuclides in solid solutions Pb 1-y (Se 0.08 Te 0.92 ) y and (Pb 1-x Sn x ) y Te 1-y , where x=0.1 and 0.2, has been studied, the results are presented. Data on dependence of selenium and tellurium self-diffusion coefficients on temperature in the range of 600-750 deg C are given. The results of the study of self-diffusion coefficient isothermal dependences on lead and tellurium vapour pressure in equilibrium with solid phases have been considered. It is ascertained that a change in the temperature and p-n transitions initiate the change in self-diffusion mechanisms of chalcogenide atoms. 8 refs., 3 tabs

Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

International Nuclear Information System (INIS)

ISLAM, N.E.; SCHAMILOGLU, E.; MAR, ALAN; LOUBRIEL, GUILLERMO M.; ZUTAVERN, FRED J.; JOSHI, R.P.

2000-01-01

The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 10 4 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10 8 shots for electro-optic drivers. Much effort is currently being channeled in the

Nuclear medicine. Progress report for quarter ending June 30, 1982

Energy Technology Data Exchange (ETDEWEB)

Knapp, F.F. Jr.; Ambrose, K.R.; Butler, T.A.; Goodman, M.M.; Hoeschele, J.D.; Srivastava, P.C.

1982-09-01

The oxidation products of tellurium and selenium fatty acids were shown to differ and may relate to the unique prolonged retention of tellurium fatty acids in the heart. The studies suggest that the trapping of tellurium fatty acids in the heart may result from the formation of an insoluble oxidation product after entry into the cells of the heart muscle. Also described in this report is the synthesis of several barbituric acid analogues for evaluation as potential cerebral perfusion agents. The present studies indicate that the iodovinyl-alkyl barbiturates cross the intact blood-brain barrier but undergo in vivo deiodination as measured by a high uptake of radioiodine in the thyroid. During this period four /sup 191/Os-osmate shipments were made to Medical Cooperative investigators for evaluation of the ultrashort-lived /sup 191//sup m/Ir (T/sub 1/2/ = 4.9 sec) obtained from the /sup 191//sup m/Ir generator. Seven shipments of the /sup 195//sup m/Pt-labeled cis-dichlorodiammineplatinum(II) antitumor drug were made to collaborators and fice shipments of radiolabeled tellurium fatty acids were made to the Massachusetts General Hospital.

Cs_7Sm_1_1[TeO_3]_1_2Cl_1_6 and Rb_7Nd_1_1[TeO_3]_1_2Br_1_6, the new tellurite halides of the tetragonal Rb_6LiNd_1_1[SeO_3]_1_2Cl_1_6 structure type

International Nuclear Information System (INIS)

Charkin, Dmitri O.; Black, Cameron; Downie, Lewis J.; Sklovsky, Dmitry E.; Berdonosov, Peter S.; Olenev, Andrei V.; Zhou, Wuzong; Lightfoot, Philip; Dolgikh, Valery A.

2015-01-01

Two new rare-earth – alkali – tellurium oxide halides were synthesized by a salt flux technique and characterized by single-crystal X-ray diffraction. The structures of the new compounds Cs_7Sm_1_1[TeO_3]_1_2Cl_1_6 (I) and Rb_7Nd_1_1[TeO_3]_1_2Br_1_6 (II) (both tetragonal, space group I4/mcm) correspond to the sequence of [MLn_1_1(TeO_3)_1_2] and [M_6X_1_6] layers and bear very strong similarities to those of known selenite analogs. We discuss the trends in similarities and differences in compositions and structural details between the Se and Te compounds; more members of the family are predicted. - Graphical abstract: Two new rare-earth – alkali – tellurium oxide halides were predicted and synthesized. - Highlights: • Two new rare-earth – alkali – tellurium oxide halides were synthesized. • They adopt slab structure of rare earth-tellurium-oxygen and CsCl-like slabs. • The Br-based CsCl-like slabs have been observed first in this layered family.

Ten Good Reasons for the Use of the Tellurium-Centered Anderson-Evans Polyoxotungstate in Protein Crystallography.

Science.gov (United States)

Bijelic, Aleksandar; Rompel, Annette

2017-06-20

Protein crystallography represents at present the most productive and most widely used method to obtain structural information on target proteins and protein-ligand complexes within the atomic resolution range. The knowledge obtained in this way is essential for understanding the biology, chemistry, and biochemistry of proteins and their functions but also for the development of compounds of high pharmacological and medicinal interest. Here, we address the very central problem in protein crystallography: the unpredictability of the crystallization process. Obtaining protein crystals that diffract to high resolutions represents the essential step to perform any structural study by X-ray crystallography; however, this method still depends basically on trial and error making it a very time- and resource-consuming process. The use of additives is an established process to enable or improve the crystallization of proteins in order to obtain high quality crystals. Therefore, a more universal additive addressing a wider range of proteins is desirable as it would represent a huge advance in protein crystallography and at the same time drastically impact multiple research fields. This in turn could add an overall benefit for the entire society as it profits from the faster development of novel or improved drugs and from a deeper understanding of biological, biochemical, and pharmacological phenomena. With this aim in view, we have tested several compounds belonging to the emerging class of polyoxometalates (POMs) for their suitability as crystallization additives and revealed that the tellurium-centered Anderson-Evans polyoxotungstate [TeW 6 O 24 ] 6- (TEW) was the most suitable POM-archetype. After its first successful application as a crystallization additive, we repeatedly reported on TEW's positive effects on the crystallization behavior of proteins with a particular focus on the protein-TEW interactions. As electrostatic interactions are the main force for TEW binding

E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

International Nuclear Information System (INIS)

Moeller, M.; Lima, M. M. Jr. de; Cantarero, A.; Dacal, L. C. O.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

2011-01-01

Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm -1 reveals an E 1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

Science.gov (United States)

Möller, M.; Dacal, L. C. O.; de Lima, M. M.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.; Cantarero, A.

2011-12-01

Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm-1 reveals an E1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

Transport properties of fission product vapors

International Nuclear Information System (INIS)

Im, K.H.; Ahluwalia, R.K.

1983-07-01

Kinetic theory of gases is used to calculate the transport properties of fission product vapors in a steam and hydrogen environment. Provided in tabular form is diffusivity of steam and hydrogen, viscosity and thermal conductivity of the gaseous mixture, and diffusivity of cesium iodide, cesium hydroxide, diatomic tellurium and tellurium dioxide. These transport properties are required in determining the thermal-hydraulics of and fission product transport in light water reactors

Design and construction of a prototype to obtain TeO2

International Nuclear Information System (INIS)

Roque H, I.

1997-01-01

At the National Institute of Nuclear Research is developed the process to produce the radioisotope Iodine 131 which is employed in medicine with therapeutical purposes. The raw material to produce iodine 131 is tellurium dioxide (TeO 2 ). TeO 2 is intended to be produced from a prototype being this aim of this thesis named D esign and construction of a prototype to obtain TeO 2 . The TeO 2 obtained must have specific physicochemical characteristics, being necessary an special design of a prototype which will guarantee the quality of tellurium dioxide obtention. Design and building the final prototype project, was developed in to three stages. At the first stage, the TeO 2 was obtained at the laboratory, this allows to know the basic reaction characteristics. The second stage purpose, was to work with an former prototype which allowed to produce 100 g of tellurium dioxide. In the last stage a depurated chemical process parameters was made and the prototype was refined in regard to its mechanical design, giving us as result the final prototype. With this final prototype, the production reaches 2 Kg/week of tellurium dioxide with the best physicochemical properties which is to be employed as raw material in order to produce iodine 131. (Author)

Out-of-pile experiments of fuel-cladding chemical interaction, (2)

International Nuclear Information System (INIS)

Konashi, Kenji; Yato, Tadao; Kaneko, Hiromitsu; Honda, Yutaka

1980-01-01

Cesium seems to be one of the most important fission products in the fuel-cladding chemical interaction of fuel pins for LMFBRs. However the FCCI under irradiation cannot always be explained by considering only cesium-oxygen system as the corrosive, since attack does not occur in the cesium-oxygen system unless oxygen potential is sufficiently high. Cesium-tellurium-oxygen system has been proposed to account for heavy cladding attack which was sometimes found in hypostoichiometric mixed oxide fuel pins. In this paper, the experiment on the reaction of liquid tellurium with stainless steel is reported. The type 316 stainless steel claddings for Monju type fuel pins were used as the test specimens. Tellurium was contained into the cladding tubes with end plugs. The temperature dependence of the attack by tellurium was examined in the range from 450 to 900 deg C for 30 min, and the heating time dependence was examined from 5 min to 200 hr at 725 deg C. An infrared lamp furnace was used for the experiment within 7 hr, and a resistance furnace for longer experiment. The character of corrosion was matrix attack, and the reaction products on the stainless steel surfaces consisted of chrome rich inner phase and iron and nickel rich outer phase. The results are reported. (Kako, I.)

Narrowing the gap: from semiconductor to semimetal in the homologous series of rare-earth zinc arsenides RE(2-y)Zn4As4·n(REAs) and Mn-substituted derivatives RE(2-y)Mn(x)Zn(4-x)As4·n(REAs) (RE = La-Nd, Sm, Gd).

Science.gov (United States)

Lin, Xinsong; Tabassum, Danisa; Mar, Arthur

2015-12-14

A homologous series of ternary rare-earth zinc arsenides, prepared by reactions of the elements at 750 °C, has been identified with the formula RE(2-y)Zn4As4·n(REAs) (n = 2, 3, 4) for various RE members. They adopt trigonal structures: RE(4-y)Zn4As6 (RE = La-Nd), space group R3̄m1, Z = 3; RE(5-y)Zn4As7 (RE = Pr, Nd, Sm, Gd), space group P3̄m1, Z = 1; RE(6-y)Zn4As8 (RE = La-Nd, Sm, Gd), space group R3̄m1, Z = 3. The Zn atoms can be partially substituted by Mn atoms, resulting in quaternary derivatives RE(2-y)Mn(x)Zn(4-x)As4·n(REAs). Single-crystal structures were determined for nine ternary and quaternary arsenides RE(2-y)M4As4·n(REAs) (M = Mn, Zn) as representative examples of these series. The structures are built by stacking close-packed nets of As atoms, sometimes in very long sequences, with RE atoms occupying octahedral sites and M atoms occupying tetrahedral sites, resulting in an intergrowth of [REAs] and [M2As2] slabs. The recurring feature of all members of the homologous series is a sandwich of [M2As2]-[REAs]-[M2As2] slabs, while rocksalt-type blocks of [REAs] increase in thickness between these sandwiches with higher n. Similar to the previously known related homologous series REM(2-x)As2·n(REAs) which is deficient in M, this new series RE(2-y)M4As4·n(REAs) exhibits deficiencies in RE to reduce the electron excess that would be present in the fully stoichiometric formulas. Enthalpic and entropic factors are considered to account for the differences in site deficiencies in these two homologous series. Band structure calculations indicate that the semiconducting behaviour of the parent n = 0 member (with CaAl2Si2-type structure) gradually evolves, through a narrowing of the gap between valence and conduction bands, to semimetallic behaviour as the number of [REAs] blocks increases, to the limit of n = ∞ for rocksalt-type REAs.

Peeled film GaAs solar cell development

International Nuclear Information System (INIS)

Wilt, D.M.; Thomas, R.D.; Bailey, S.G.; Brinker, D.J.; DeAngelo, F.L.

1990-01-01

Thin film, single crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/Kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10 6 ) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofloric acid (HF). The intent of this work is to demonstrate the feasibility of using the peeled film technique to fabricate high efficiency, low mass GaAs solar cells. We have successfully produced a peeled film GaAs solar cell. The device, although fractured and missing the aluminum gallium arsenide (Al x Ga 1 - x As) window and antireflective (AR) coating, had a Voc of 874 mV and a fill factor of 68% under AMO illumination

Terahertz and infrared transmission of an organic/inorganic hybrid thermoelectric material

International Nuclear Information System (INIS)

Heyman, J. N.; Alebachew, B. A.; Kaminski, Z. S.; Nguyen, M. D.; Coates, N. E.; Urban, J. J.

2014-01-01

We report terahertz and infrared transmission measurements of a high-performance thermoelectric material containing tellurium nanowires in a conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) matrix. The DC electrical conductivity of the hybrid material (41 S/cm) is approximately one hundred times that of pure PEDOT:PSS and more than 400 times that of a film of pure tellurium nanowires, while the terahertz-frequency (THz) conductivity of PEDOT:PSS and the hybrid material are comparable at f ∼ 2THz. A frequency-dependent conductivity model indicates that the increased DC conductivity of the hybrid material results from an increase in the DC charge mobility rather than in the free charge density. We suggest that the increased DC conductivity of the hybrid material results from an increase in linkage between PEDOT domains by the tellurium nanowires

Terahertz and infrared transmission of an organic/inorganic hybrid thermoelectric material

Energy Technology Data Exchange (ETDEWEB)

Heyman, J. N., E-mail: heyman@macalester.edu; Alebachew, B. A.; Kaminski, Z. S.; Nguyen, M. D. [Physics Department, Macalester College, St. Paul, Minnesota 55105 (United States); Coates, N. E.; Urban, J. J. [The Molecular Foundry, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2014-04-07

We report terahertz and infrared transmission measurements of a high-performance thermoelectric material containing tellurium nanowires in a conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) matrix. The DC electrical conductivity of the hybrid material (41 S/cm) is approximately one hundred times that of pure PEDOT:PSS and more than 400 times that of a film of pure tellurium nanowires, while the terahertz-frequency (THz) conductivity of PEDOT:PSS and the hybrid material are comparable at f ∼ 2THz. A frequency-dependent conductivity model indicates that the increased DC conductivity of the hybrid material results from an increase in the DC charge mobility rather than in the free charge density. We suggest that the increased DC conductivity of the hybrid material results from an increase in linkage between PEDOT domains by the tellurium nanowires.

Electrically Driven Photonic Crystal Nanocavity Devices

Science.gov (United States)

2012-01-01

material, here gallium arsenide and indium arsenide self- assembled quantum dots (QDs). QDs are preferred for the gain medium because they can have...blue points ) and 150 K (green points ). The black lines are linear fits to the above threshold output power of the lasers, which are used to find the...SHAMBAT et al.: ELECTRICALLY DRIVEN PHOTONIC CRYSTAL NANOCAVITY DEVICES 1707 Fig. 13. (a) Tilted SEM picture of a fabricated triple cavity device. The in

Occurency and aqueous processing of tellurides from Sonora (Mexico)

International Nuclear Information System (INIS)

Aguayo, S.; Perez, E.; Ecinas, M.A.

1996-01-01

Tellurium production is limited mainly to that obtained from the treatment of electrolyte muds from copper refineries. however, there are several other sources from which the precious metal tellurides are potentially attractive. This work presents a review of the main localitiesin Sonora (Mexico), where tellurides have been found. In addition, based upon the physical chemistry fundamentals for tellurium and precious metal tellurides, the aqueous extraction and recovery routes are discussed. (Author) 51 refs

Indium Arsenide Nanowires

DEFF Research Database (Denmark)

Madsen, Morten Hannibal

-ray diffraction. InAs NWs can be used in a broad range of applications, including detectors, high speed electronics and low temperature transport measurements, but in this thesis focus will be put on biological experiments on living cells. Good control of Au-assisted InAs NW growth has been achieved......This thesis is about growth of Au-assisted and self-assisted InAs nanowires (NWs). The wires are synthesized using a solid source molecular beam epitaxy (MBE) system and characterized with several techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x...... by a systematic study to optimize the growth conditions; first the Au deposition, then the growth temperature and finally the beam fluxes. For further control of the growth, Au droplets have been positioned with electron beam lithography and large scale arrays with a > 99 % yield have been made on 2 inch...

Polarization developments

International Nuclear Information System (INIS)

Prescott, C.Y.

1993-07-01

Recent developments in laser-driven photoemission sources of polarized electrons have made prospects for highly polarized electron beams in a future linear collider very promising. This talk discusses the experiences with the SLC polarized electron source, the recent progress with research into gallium arsenide and strained gallium arsenide as a photocathode material, and the suitability of these cathode materials for a future linear collider based on the parameters of the several linear collider designs that exist

Novel method of producing radioactive iodine

International Nuclear Information System (INIS)

Shikata, E.; Amano, H.

1976-01-01

Radioactive iodine(I-131) is easily obtained by heating, at a temperature ranging from 600 0 C to 650 0 C, a tellurium oxide intermediate which was obtained by heating telluric acid or tellurium trioxide at a temperature from about 400 0 C to 560 0 C and was irradited with a neutron flux. Thus, pure I-131 is obtained without the complicated operations required in a conventional process for separation and/or purification of the product. 4 claims

Single crystal growth and structure refinements of CsMxTe2-xO6 (M = Al, Ga, Ge, In) pyrochlores

International Nuclear Information System (INIS)

Siritanon, Theeranun; Sleight, A.W.; Subramanian, M.A.

2011-01-01

Graphical abstract: Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown and structure refinements indicate deviations from ideal stoichiometry presumably related to mixed valency of tellurium. Highlights: → Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown. → Structure refinements from single crystal X-ray diffraction data confirm e structure. → Deviations from ideal stoichiometry suggest mixed valency of tellurium and hence conductivity. -- Abstract: Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown from a TeO 2 flux. Structure refinements from single crystal X-ray diffraction data are reported. These results are used to discuss deviations from ideal stoichiometry that result in electronic conductivity presumably related to mixed valency of tellurium.

Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni5−xAs2 (x = 0.25), from the Bon Accord oxide body, South Africa

International Nuclear Information System (INIS)

Bindi, Luca; Tredoux, Marian; Zaccarini, Federica; Miller, Duncan E.; Garuti, Giorgio

2014-01-01

Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni 5−x As 2 (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P6 3 mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å 3 . The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd 5 Sb 2 structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni 4.75 (As 1.93 Fe 0.05 Sb 0.02 ). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral

Constitutional studies in the palladium-rhodium-tellurium (-oxygen) system. A contribution to elucidate the behaviour of Pd, Rh and Te in the vitrification process of high-level waste concentrates (HLWC)

International Nuclear Information System (INIS)

Hartmann, T.

1996-01-01

In the vitrification process of high-level waste concentrates (HLWC) from the reprocessing of nuclear spent fuel elements, about 30 different elements have to be immobilized in a solid matrix consisting of an alkali borosilicate glass. Most of the waste oxides are dissolved in the alkali borosilicate melt and become structural elements of the glasses when cooled. This, however, applies only partly to the platinum metals Ru, which forms RuO 2 , and palladium and rhodium, which deposit as sparingly soluble and electrically conducting tellurides. This might considerably impair the technical process of HLWC vitrification. Therefore, constitutional studies on the Pd-Rh-Te system became necessary. The phase diagram of the Pd-Rh-Te ternary system at temperatures of 1150, 1100, 1050, 1000, 950, 900 and 750 C was determined under inertial conditions. Oxygen exerts a major influence on the system. Already under limited availability of oxygen, the rhodium contents of the solid solution phases α 1 and α 2 are clearly diminished. Rhodium of the phases becomes oxidized selectively. The three-phase field α 1 +α 2 +L is shifted to higher palladium and tellurium contents, even oxygen is available to a limited extend only. With the oxygen in the air, the extension of the three-phase space is reduced markedly. The complex process chemistry of Pf, Rh and Te during the vitrification can be described by the state of the Pd-Rh-Te ternary system after annealing in (air) oxygen for limited periods of time. (orig./MM) [de

Evaluation of radioactive wastes in Instituto de Energia Atomica (Sao Paulo-Brazil)

International Nuclear Information System (INIS)

Sawakuchi, R.S.

1978-01-01

An evaluation of present and future production of radioactive waste in several departments of the Instituto de Energia Atomica has been done. Taking into account this evaluation, the criteria for disposal and convenient treatment technique have been studied. The most critical form of liquid radioactive waste is that of 131 I processing because high concentration of radiotellurium always accompanies this form of waste. Ion exchange and precipitation techniques were used to study this waste processing. Two kinds of resins were used by the ion exchange method: the strong anionic and the stron cationic. Quantitative tellurium retention has not been attained by the ion exchange method using either resins. The technique of precipitation of radioactive tellurium as ammonium tellurate was also used, allowing us to obtain more than 99% of tellurium removal. The remaining radioactive wastes can be eliminated using the storage for decay criteria with further release to the sewers in the case of liquids and burial in the case of solids. (Author) [pt

Structural phase transition and elastic properties of AnAs (An= Th, U, Np, Pu) compounds at high pressure

International Nuclear Information System (INIS)

Aynyas, Mahendra; Arya, B.S.; Srivastava, Vipul; Sanyal, Sankar P.

2006-01-01

The high pressure behavior and pressure induced structural phase transition of mono arsenides (AnAs; An = Th, U, Np, Pu) have been investigated by using a three body interaction potential (TBI). This method has been found quite satisfactory in the case of other Rare-Earth compounds. The calculated compression curves of mono-arsenides obtained so have been compared with high pressure X-ray diffraction work. The theoretically predicted phase transition pressure and other structural properties for these compounds agree reasonably well with the measured values. (author)

Determination of trace elements in electronic materials by NAA

International Nuclear Information System (INIS)

Kobayashi, Kenji

1986-01-01

Trace amounts of elements in electronic materials were determined by instrumental neutron activation analysis (INAA), re-activation analysis and substoichiometric radioactivation analysis using gamma-ray spectrometry. Ten elements (Cr, Cu, Fe, Zn, Co, Eu, Ir, Sb, Sc, Tb) in gallium arsenide single crystal were determined by INAA and substoichiometric radioactivation analysis. Trace level of chromium (10 13 atoms/cm 3 ) and zinc (10 14 atoms/cm 3 ) in gallium arsenide single crystal were determined by INAA. The chromium concentrations in horizontal Bridgmangrown semi-insulating gallium arsenide ingot were ranged from 1.2 x 10 16 atoms/cm 3 at seed end to 3.5 x 10 16 atoms/cm 3 at tail end. The trace determinations of iron (10 14 atoms/cm 3 ) and copper (10 14 atoms/cm 3 ) in silicon, gallium arsenide and indium phoshide single crystals were carried out by substoichiometric radioactivation analysis. The reactivation analysis for the multielement determination of indium phosphide single crystal was carried out and nineteen elements were determined simultaneously by gamma-ray spectrometry. Eleven elements (Ag, As, Br, Co, Cr, Fe, K, Mn, Sb, Sc, Zn) in four NIES standard reference materials (Pond Sediment, Chlorella, Mussel and Tea Leaves) and seven elements (Co, Cr, Eu, Fe, Sc, Tb, Yb) in two NBS glasses (SRM-615 and SRM-613) were determined by INAA and substoichiometric radioactivation analysis and the analytical results obtained by the methods were in good agreement with certified values by NIES and NBS. (author)

Thermoelectric properties of P-type Sb2Te3 thick film processed by a screen-printing technique and a subsequent annealing process

International Nuclear Information System (INIS)

Kim, Sun Jin; We, Ju Hyung; Kim, Jin Sang; Kim, Gyung Soo; Cho, Byung Jin

2014-01-01

Highlights: • We report on thermoelectric properties of screen-printed Sb 2 Te 3 thick film. • Subsequent annealing process determines thermoelectric properties of Sb 2 Te 3 film. • Annealing in tellurium powder ambient contributes to tellurium-rich Sb 2 Te 3 film. • Annealing in tellurium powder ambient enhances carrier mobility of Sb 2 Te 3 film. -- Abstract: We herein report the thermoelectric properties of Sb 2 Te 3 thick film fabricated by a screen-printing technique and a subsequent annealing process. Each step of the screen-printing fabrication process of Sb 2 Te 3 thick film is described in detail. It was found that the subsequent annealing process must be carefully designed to achieve good thermoelectric properties of the screen-printed film. The results show that the annealing of the screen-printed Sb 2 Te 3 thick film together with tellurium powder in the same process chamber significantly improves the carrier mobility by increasing the average scattering time of the carrier in the film, resulting in a large improvement of the power factor. By optimizing the annealing process, we achieved a maximum thermoelectric figure-of-merit, ZT, of 0.32 at room temperature, which is slightly higher than that of bulk Sb 2 Te 3 . Because screen-printing is a simple and low-cost process and given that it is easy to scale up to large sizes, this result will be useful for the realization of large, film-type thermoelectric devices

Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

Science.gov (United States)

1984-01-01

Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

Semiconducting III-V compounds

CERN Document Server

Hilsum, C; Henisch, Heinz R

1961-01-01

Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

Synthesis and characterization of the [Te(SCN2H4)4] (SO4)2 complex. Application to the separation of 99Mo from fission products

International Nuclear Information System (INIS)

Mestnik, S.A.C.; Silva, C.P.G. da.

1988-10-01

Thiourea reacts with tellurium-IV ions, in sulfuric medium, to form cationic complex which is strongly retained on cationic ion exchanger. The method was applied to separate 99 Mo from 132 Te obtained in the fission of 235 U since molybdenum does not form such complex and passes throught the cationic exchanger column in the molibdate form. In this paper, the procedure of the tellurium-thiourea complex preparation and its characterization are described. Elemental analysis, ultraviolet and infra-red absorption spectrophotometry as well as thermogravimetry were used to characterize the complex. (author) [pt

Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni{sub 5−x}As{sub 2} (x = 0.25), from the Bon Accord oxide body, South Africa

Energy Technology Data Exchange (ETDEWEB)

Bindi, Luca, E-mail: luca.bindi@unifi.it [Dipartimento di Scienze della Terra, Università degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Tredoux, Marian [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Zaccarini, Federica [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria); Miller, Duncan E. [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Garuti, Giorgio [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria)

2014-07-15

Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni{sub 5−x}As{sub 2} (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P6{sub 3}mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å{sup 3}. The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd{sub 5}Sb{sub 2} structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni{sub 4.75}(As{sub 1.93}Fe{sub 0.05}Sb{sub 0.02}). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral.

Gallium arsenide injection lasers

International Nuclear Information System (INIS)

Thompson, G.H.B.

1975-01-01

The semiconductor injection laser includes a thin inner GaAs p-n junction layer between two outer GaAlAs layers which are backed by further thin outer GaAlAs layers with a heavier doping of AlAs. This reduces optical losses. Optical energy is further confined within the inner layers and the lasing threshold reduced by added outer GaAs layers of low electrical and thermal resistivity

Ion implantation in semiconductor bodies

International Nuclear Information System (INIS)

Badawi, M.H.

1984-01-01

Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

Coherent light scattering from a buried dipole in a high-aperture optical system

International Nuclear Information System (INIS)

Vamivakas, A N; Mueller, T; Atatuere, M; Yurt, A; Koeklue, F H; Uenlue, M S

2011-01-01

We develop a theoretical formulation to calculate the absolute and differential transmission of a focused laser beam through a high-aperture optical system. The focused field interacts with a point dipole that is buried in a high-index material, and is situated at the Gaussian focus of the focusing and collection two-lens system. The derived expressions account for the vectorial nature of the focused electromagnetic field and the inhomogeneous focal region environment. The results obtained are in agreement with recent resonant light-scattering experiments where the buried emitter is an indium arsenide semiconductor quantum dot in gallium arsenide.

The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

Science.gov (United States)

Curtis, H. B.; Hart, R. E., Jr.

1982-01-01

Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

STANFORD: Highly polarized SLC electron beams

International Nuclear Information System (INIS)

Anon.

1993-01-01

Full text: Using specialized photocathodes made with 'strained' gallium arsenide, physicists at the Stanford Linear Accelerator Center (SLAC) have generated electron beams with polarizations in excess of 60 percent a year ahead of schedule. Together with recent luminosity increases, this breakthrough will have a major impact on the physics output of the Stanford Linear Collider (SLC). Beam polarization was almost tripled using photocathodes in which a gallium arsenide layer was grown epitaxially over a substrate of gallium arsenide phosphide. The mismatch between these two layers deforms the crystal structure and removes a degeneracy in the valence band structure, permitting selective optical pumping of one unique spin state. Whereas conventional gallium arsenide photocathodes are limited to 50 percent polarization because of this degeneracy (and realistic cathodes fall substantially below this theoretical limit), such strained crystal lattices have the potential to yield polarizations close to 100 percent. Polarization enhancement with strained lattices was first demonstrated in 1991 by a SLAC/Wisconsin/ Berkeley group (May 1991, page 6) with a 71 percent polarization in a laboratory experiment. More recently this group has achieved polarization in excess of 90 percent, reported last November at the Nagoya Spin Symposium. (In a complementary development, a Japanese KEK/ Nagoya/KEK obtains polarized beams using a 'superlattice' - May 1991, page 4.) The 1993 SLC run, the strained gallium arsenide photocathode technique's debut in an operating particle accelerator, has proved to be a resounding, unqualified success - as have physics experiments on the Z particles produced by the highly polarized beam. A conservative approach was called for, due to concerns about possible charge saturation effects. A relatively thick (0.3 micron) gallium arsenide layer was used for the photocathode in the SLC polarized electron source. With a titanium

Aspects of a Distinct Cytotoxicity of Selenium Salts and Organic Selenides in Living Cells with Possible Implications for Drug Design

Directory of Open Access Journals (Sweden)

Ethiene Castellucci Estevam

2015-07-01

Full Text Available Selenium is traditionally considered as an antioxidant element and selenium compounds are often discussed in the context of chemoprevention and therapy. Recent studies, however, have revealed a rather more colorful and diverse biological action of selenium-based compounds, including the modulation of the intracellular redox homeostasis and an often selective interference with regulatory cellular pathways. Our basic activity and mode of action studies with simple selenium and tellurium salts in different strains of Staphylococcus aureus (MRSA and Saccharomyces cerevisiae indicate that such compounds are sometimes not particularly toxic on their own, yet enhance the antibacterial potential of known antibiotics, possibly via the bioreductive formation of insoluble elemental deposits. Whilst the selenium and tellurium compounds tested do not necessarily act via the generation of Reactive Oxygen Species (ROS, they seem to interfere with various cellular pathways, including a possible inhibition of the proteasome and hindrance of DNA repair. Here, organic selenides are considerably more active compared to simple salts. The interference of selenium (and tellurium compounds with multiple targets could provide new avenues for the development of effective antibiotic and anticancer agents which may go well beyond the traditional notion of selenium as a simple antioxidant.

Forming Glasses from Se and Te

Directory of Open Access Journals (Sweden)

Pierre Lucas

2009-10-01

Full Text Available Despite being close neighbors on the Periodic Table, selenium and tellurium present a totally different abilities to form glasses. Se is a very good glass former, and gives rise to numerous glass compositions which are popular for their transparency in the infrared range and their stability against crystallization. These glasses can be shaped into sophisticated optical devices such as optical fibers, planar guides or lenses. Nevertheless, their transparencies are limited at about 12 μm (depending on the thickness of the optical systems due to the relatively small mass of the Se element. On the other hand, tellurium is heavier and its use in substitution for Se permits to shift the IR cutoff beyond 20 μm. However, the semimetallic nature of Te limits its glass formation ability and this glass family is known to be unstable and consequently has found application as phase change material in the Digital Versatile Disk (DVD technology. In this paper, after a review of selenide glasses and their applications, it will be shown how, in a recent past, it has been possible to stabilize tellurium glasses by introducing new elements like Ga or I in their compositions.

Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

International Nuclear Information System (INIS)

Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

1975-01-01

Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

Science.gov (United States)

Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

2017-12-01

Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

Rare (Earth Elements [score

Directory of Open Access Journals (Sweden)

Camilo Méndez

2014-12-01

Full Text Available Rare (Earth Elements is a cycle of works for solo piano. The cycle was inspired by James Dillon’s Book of Elements (Vol. I-V. The complete cycle will consist of 14 pieces; one for each selected rare (earth element. The chosen elements are Neodymium, Erbium, Tellurium, Hafnium, Tantalum, Technetium, Indium, Dysprosium, Lanthanium, Cerium, Europium, Terbium, Yttrium and Darmstadtium. These elements were selected due to their special atomic properties that in many cases make them extremely valuable for the development of new technologies, and also because of their scarcity. To date, only 4 works have been completed Yttrium, Technetium, Indium and Tellurium.

Anisotropic Light Diffraction by Ultrasound in Crystals with Strong Acoustic Anisotropy

Science.gov (United States)

Voloshin, Andrey S.; Balakshy, Vladimir I.

In modern acousto-optics, crystalline materials are used predominantly for manufacturing acousto-optic instruments. Among these materials, such crystals as paratellurite, tellurium, calomel, TAS and some others occupy a prominent place, which are distinguished by exceptionally large anisotropy of acoustic properties. In this work, the influence of acoustic beam energy walk-off on characteristics of Bragg diffraction of light is studied by the example of tellurium crystal. It is shown that the walk-off can substantially change angular and frequency ranges, resulting in their narrowing or broadening subject to position of the operating point in the Bragg angle frequency characteristic. Coefficients of broadening are introduced for characterization of this effect.

Phase relations in the Cu-Te-S system at temperatures between 350 and 900 degree C

DEFF Research Database (Denmark)

Karup-Møller, Sven

1994-01-01

data and optical data on phases A and B are listed. At 350 degree C there exist two liquid fields which at 450 degree C have become one continuous field stretching from Cu45Te55 with low S content to the tellurium corner of the phase diagram and from there to the sulphur corner. With increasing S......, the Cu content of the liquid rapidly decreases to trace amonts. With increasing temperature the field extends into the ternary from the tellurium corner towards the Cu-S join. The boundary of the liquid field in the central portion of the phae diagram towards the sulphur corner does not change position...

Segregation of the elements of the platinum group in a simulated high-level waste glass

International Nuclear Information System (INIS)

Mitamura, H.; Banba, T.; Kamizono, H.; Kiriyama, Y.; Kumata, M.; Murakami, T.; Tashiro, S.

1983-01-01

Segregation of the elements of the platinum group occurred during vitrification of the borosilicate glass containing 20 wt% simulated high-level waste oxides. The segregated materials were composed of two crystalline phases: one was the solid solution of ruthenium and rhodium dioxides and the other was that of palladium and rhodium metals also with tellurium. The segregated materials were not distributed homogeneously throughout the glass: (i) on the surface of the glass, there occurred palladium, rhodium and tellurium alloy alone; and (ii) at the inner part of the glass, the agglomerates of the two phases were concentrated in one part and dispersed in the other

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

International Nuclear Information System (INIS)

Vu, K. T.; Madden, S. J.

2011-01-01

The authors report in detail on the reactive plasma etching properties of tellurium and demonstrate a high quality etching process using hydrogen, methane, and argon. Very low loss planar ridge waveguides are demonstrated. Optical losses in tellurium dioxide waveguides below 0.1 dB/cm in most of the near infrared region of the electromagnetic spectrum and at 1550 nm have been achieved--the lowest ever reported by more than an order of magnitude and clearly suitable for planar integrated devices. The etch process is also shown to be suitable for chalcogenide glasses which may be of importance in applications such as phase change memory devices and nonlinear integrated optics.

Characterizing and engineering tunable spin functionality inside indium arsenide/gallium arsenide quantum dot molecules

Science.gov (United States)

Liu, Weiwen

The continual downsizing of the basic functional units used in the electronics industry has motivated the study of the quantum computation and related topics. To overcome the limitations of classical physics and engineering, some unique quantum mechanical features, especially entanglement and superpositions have begun to be considered as important properties for future bits. Including these quantum mechanical features is attractive because the ability to utilize quantum mechanics can dramatically enhance computational power. Among the various ways of constructing the basic building blocks for quantum computation, we are particularly interested in using spins inside epitaxially grown InAs/GaAs quantum dot molecules as quantum bits (qubits). The ability to design and engineer nanostructures with tailored quantum properties is critical to engineering quantum computers and other novel electro-optical devices and is one of the key challenges for scaling up new ideas for device application. In this thesis, we will focus on how the structure and composition of quantum dot molecules can be used to control spin properties and charge interactions. Tunable spin and charge properties can enable new, more scalable, methods of initializing and manipulating quantum information. In this thesis, we demonstrate one method to enable electric-field tunability of Zeeman splitting for a single electron spin inside a quantum dot molecules by using heterostructure engineering techniques to modify the barrier that separates quantum dots. We describe how these structural changes to the quantum dot molecules also change charge interactions and propose ways to use this effect to enable accurate measurement of coulomb interactions and possibly charge occupancy inside these complicated quantum dot molecules.

Accurate determination of light elements by charged particle activation analysis

International Nuclear Information System (INIS)

Shikano, K.; Shigematsu, T.

1989-01-01

To develop accurate determination of light elements by CPAA, accurate and practical standardization methods and uniform chemical etching are studied based on determination of carbon in gallium arsenide using the 12 C(d,n) 13 N reaction and the following results are obtained: (1)Average stopping power method with thick target yield is useful as an accurate and practical standardization method. (2)Front surface of sample has to be etched for accurate estimate of incident energy. (3)CPAA is utilized for calibration of light element analysis by physical method. (4)Calibration factor of carbon analysis in gallium arsenide using the IR method is determined to be (9.2±0.3) x 10 15 cm -1 . (author)

Solar-Electrochemical Power System for a Mars Mission

Science.gov (United States)

Withrow, Colleen A.; Morales, Nelson

1994-01-01

This report documents a sizing study of a variety of solar electrochemical power systems for the intercenter NASA study known as 'Mars Exploration Reference Mission'. Power systems are characterized for a variety of rovers, habitation modules, and space transport vehicles based on requirements derived from the reference mission. The mission features a six-person crew living on Mars for 500 days. Mission power requirements range from 4 kWe to 120 kWe. Primary hydrogen and oxygen fuel cells, regenerative hydrogen and oxygen fuel cells, sodium sulfur batteries advanced photovoltaic solar arrays of gallium arsenide on germanium with tracking and nontracking mechanisms, and tent solar arrays of gallium arsenide on germanium are evaluated and compared.

Geology and mineralogy of the Cu-Ni-Co-U ore deposits at Talmessi and Meskani, Central Iran

International Nuclear Information System (INIS)

Tarkian, M.; Bock, W.D.; Neumann, M.

1983-01-01

Polymetallic hydrothermal veins and impregnations carry copper-iron sulphides (bornite, chalcopyrite, digenite, chalcocite) and nickel-cobalt arsenides (niccolite, rammelsbergite, safflorite, skutterudite) with bismuth and uranium as well as some copper arsenides (domeykite, koutekite etc.) in two dormant mines in the Anarak District. The geological and tectonic framework and the mineral associations of both occurrences have been investigated in detail. Both mineralization can be attributed to Tertiary magmatism, but were deposited in two temporally distinct periods. The older copper sulphide minerealization is structurally controlled by pre-middle Eocene tectronics and is linked to Eocene shoshonitic volcanism. The second, younger nickel-cobalt-silver-bismuth-uranium mineralization might be attributed to a granitic magmatism linked to a Miocene phase of movement. (Authors)

Fabrication of Te and Te-Au Nanowires-Based Carbon Fiber Fabrics for Antibacterial Applications

Directory of Open Access Journals (Sweden)

Ting-Mao Chou

2016-02-01

Full Text Available Pathogenic bacteria that give rise to diseases every year remain a major health concern. In recent years, tellurium-based nanomaterials have been approved as new and efficient antibacterial agents. In this paper, we developed the approach to directly grow tellurium nanowires (Te NWs onto commercial carbon fiber fabrics and demonstrated their antibacterial activity. Those Te NWs can serve as templates and reducing agents for gold nanoparticles (Au NPs to deposit. Three different Te-Au NWs with varied concentration of Au NPs were synthesized and showed superior antibacterial activity and biocompability. These results indicate that the as-prepared carbon fiber fabrics with Te and Te-Au NWs can become antimicrobial clothing products in the near future.

Galvano-magnetic properties and Shubnikov de Haas effect of Te-whiskers

International Nuclear Information System (INIS)

Berezovets, Veacheslav; Bondarchuk, Nikolai; Nikolaeva, Albina; Nijankovskii, Victor

2009-01-01

The work is devoted to investigation of the peculiarities of magnetoresistance, Hall effect and Shubnikov de Haas oscillations in Te-whiskers. Te-whiskers was prepared from vapor-gas phase on the substrate pure tellurium and grown naturally, of the walls of a crucible in the course of growing Te single crystals by the Czochralski method . The measurements of the galvanomagnetic properties and Shubnikov de Haas oscillation correspond to the notion of the occurrence of the effect of intraband magnetic breakdown when two different quasi-classical cyclotron trajectories coexist simultaneously in a magnetic field. This effect is a consequence of the presence of the saddle point in the dispersion law of the tellurium valence band. (authors)

Flexible screen printed thick film thermoelectric generator with reduced material resistivity

International Nuclear Information System (INIS)

Cao, Z; Koukharenko, E; Torah, R N; Tudor, J; Beeby, S P

2014-01-01

This work presents a flexible thick-film Bismuth Tellurium/Antimony Tellurium (BiTe/SbTe) thermoelectric generator (TEG) with reduced material resistivity fabricated by screen printing technology. Cold isostatic pressing (CIP) was introduced to lower the resistivity of the printed thermoelectric materials. The Seebeck coefficient (α) and the resistivity (ρ) of printed materials were measured as a function of applied pressure. A prototype TEG with 8 thermocouples was fabricated on flexible polyimide substrate. The dimension of a single printed element was 20 mm × 2 mm × 78.4 pm. The coiled-up prototype produced a voltage of 36.4 mV and a maximum power of 40.3 nW from a temperature gradient of 20 °C

Non-destructive local determination of doping additions and main components in single crystals

International Nuclear Information System (INIS)

Ehksperiandova, L.P.; Blank, A.B.; Kukhtina, N.N.; Afanasiadi, L.I.

1994-01-01

Procedures for local non-destructive determination of elements in optical and scintillation single crystals are developed. They are applied for determination of the main components (in cadmium tungstate) and doping additions (tellurium in zinc selenide, europium in gadolinium silicate). The metrological characteristics of the developed micro-analysis methods are estimated. Segregation of the main components and doping additions in the objects under consideration are investigated. Tellurium is found to be distributed uniformly on the cross-sections of bulk zinc selenide single crystals. The segregation of europium along gadolinium silicate ingots is almost absent. On the cross-section surface of cadmium tungstate single crystals the microregions are found characterized by the prevailing contents of cadmium or tungsten

Purification of simple substances by distillation with impurity hydrothermal oxidation

International Nuclear Information System (INIS)

Kalashnik, O.N.; Nisel'son, L.A.

1987-01-01

A possibility of applying distillation method in water vapours for purification of simple substances from impurities is studied. Based on thermodynamic analysis of interaction processes in E-H 2 O system, conducted using a computer, it is as certained that SS, Se, Te, As, Cd, Hg can be purified from the majority of the impurities analysed by distillation in a water vapour flow. Behaviour of Zn, C, Ge, Al, Sb characteristic impurities under cadmium, arsenic and tellurium distillation is studied. Experiments on cadmium, arsenic and tellurium purification have confirmed, that distillation with hydrothermal oxidation of Zn, C, Ge impurities sometimes appears to be a more effective method as compared to distillation in a hydrogen flow

Circuit quantum electrodynamics with a spin qubit.

Science.gov (United States)

Petersson, K D; McFaul, L W; Schroer, M D; Jung, M; Taylor, J M; Houck, A A; Petta, J R

2012-10-18

Electron spins trapped in quantum dots have been proposed as basic building blocks of a future quantum processor. Although fast, 180-picosecond, two-quantum-bit (two-qubit) operations can be realized using nearest-neighbour exchange coupling, a scalable, spin-based quantum computing architecture will almost certainly require long-range qubit interactions. Circuit quantum electrodynamics (cQED) allows spatially separated superconducting qubits to interact via a superconducting microwave cavity that acts as a 'quantum bus', making possible two-qubit entanglement and the implementation of simple quantum algorithms. Here we combine the cQED architecture with spin qubits by coupling an indium arsenide nanowire double quantum dot to a superconducting cavity. The architecture allows us to achieve a charge-cavity coupling rate of about 30 megahertz, consistent with coupling rates obtained in gallium arsenide quantum dots. Furthermore, the strong spin-orbit interaction of indium arsenide allows us to drive spin rotations electrically with a local gate electrode, and the charge-cavity interaction provides a measurement of the resulting spin dynamics. Our results demonstrate how the cQED architecture can be used as a sensitive probe of single-spin physics and that a spin-cavity coupling rate of about one megahertz is feasible, presenting the possibility of long-range spin coupling via superconducting microwave cavities.

Sorption of V and VI group metalloids (As, Sb, Te on modified peat sorbents

Directory of Open Access Journals (Sweden)

Ansone-Bertina Linda

2016-01-01

Full Text Available The present work investigates arsenic, antimony and tellurium sorption using iron modified peat. The results were obtained using batch tests and the sorption was studied as a function of initial metalloid concentration, pH and sorption time, as well as the presence of competing substances. The obtained results indicate that modification of peat with Fe compounds significantly enhances the sorption capacity of the sorbents used for sorption of arsenic, antimony and tellurium. The optimal pH interval for the sorption of Sb(III is 6.5–9 and for As(V and Sb(V – 3–6, while As(III and tellurium sorption using Fe-modified peat is favourable in a wider interval of 3–9. The presence of competing ions as well as HA affect sorption of metalloids on Fe-modified peat. A minor impact on the reduction of metalloid sorption was detected in the presence of nitrate, sulphate, carbonate and tartrate ions, while in the presence of phosphate and HA the sorption ability of metalloids can be considerably reduced. The obtained results of kinetic experiments indicate that sorption of metalloids on Fe-modified peat mainly occurs relying on mechanisms of physical sorption processes.

NASA-OAST photovoltaic energy conversion program

Science.gov (United States)

Mullin, J. P.; Loria, J. C.

1984-01-01

The NASA program in photovoltaic energy conversion research is discussed. Solar cells, solar arrays, gallium arsenides, space station and spacecraft power supplies, and state of the art devices are discussed.

Inter-granular current in iron-oxypnictide superconductors

International Nuclear Information System (INIS)

Tamegai, T.; Tsuchiya, Y.; Nakajima, Y.; Kamihara, Y.; Hosono, H.

2010-01-01

Inter- and intragranular currents, J c inter and J c intra , in LaFePO 0.94 F 0.06 polycrystalline sample are evaluated by measuring the remanent-state field profile using magneto-optical imaging method. Obtained images show the absence of magnetic field modulation associated with the weak-link nature of grain boundaries, indicating that J c inter and J c intra are comparable in magnitude in contrast to other iron-arsenide superconductors. J c inter is estimated to be 2 x 10 4 A/cm 2 in the limit of T = 0 K, which is larger than the values in other iron-arsenide superconductors. Implication of these J c behavior is discussed in relation with possible pairing symmetries.

Structural and Optothermal Properties of Iron Ditelluride Layered Structures in the Framework of the Lattice Compatibility Theory

Directory of Open Access Journals (Sweden)

K. Ben Messaoud

2014-01-01

Full Text Available This study concerns structural and optothermal properties of iron ditelluride layered structures which were fabricated via a low-cost protocol. The main precursors were FeCl3 · 6H2O and Fe2O3. After a heat treatment within a tellurium-rich medium at various temperatures (470°C, 500°C, and 530°C during 24 h, classical analyses have been applied to the iron ditelluride layered structures. A good crystalline state with a preferential orientation of the crystallites along (111 direction has been recorded. Moreover, additional opto-thermal investigation and analyses within the framework of the Lattice Compatibility Theory gave plausible explanation for prompt temperature-dependent incorporation of tellurium element inside hematite elaborated matrices.

Anomalous behavior of tellurium abundances

Energy Technology Data Exchange (ETDEWEB)

Cohen, B L

1984-01-01

The cosmic abundance of Te is larger than for any element with atomic number greater than 40, but it is one of the least abundant elements in the earth's lithosphere and it is one of the five elements never reported in sea water. On the other hand, it is the fourth most abundant element in the human body (after Fe, Zn and Rb), and is unusually abundant in human food. It is shown that the high abundance in human food combined with the low abundance in soil requires that it be picked up by plant roots very much more efficiently than any other trace element.

Resonant ionization by laser beams: application to ions sources and to study the nuclear structure of radioactive tellurium isotopes; Ionisation resonante par faisceaux laser: application aux sources d'ions et a l'etude de la structure des noyaux radioactifs de tellure

Energy Technology Data Exchange (ETDEWEB)

Sifi, R

2007-07-15

The radioactive ion beams that are produced through current isotope separators are well separated according to the A mass but not according to the Z parameter. The resonant ionization through laser beams applied to ion sources allows the production of radioactive ion beam in a very selective and efficient way by eliminating the isobaric contamination. The first chapter is dedicated to the resonant ionization by laser beams, we describe the principle, the experimental setting, the lasers used, the ionization schemes and the domain of application. The second chapter deals with the application of resonant ionization to laser ion sources for the production of radioactive ion beams. We present experimental tests performed for getting copper ion beams. Resonant ionization through laser is also used in the spectroscopy experiments performed at the Isolde (isotope separation on-line device) installation in CERN where more than 20 elements are ionized very efficiently. The technique is based on a frequency scanning around the excitation transition of the atoms in order to probe the hyperfine structure. Laser spectroscopy allows the determination of the hyperfine structure as well as the isotopic shift of atoms. In the third chapter the method is applied to the spectroscopy of tellurium atoms. First, we define the 2 parameters on which the extraction is based: charge radius and nuclear moments, then we present several theoretical models that we have used to assess our experimental results. (A.C.)

Purification and in vitro antioxidant activities of tellurium-containing phycobiliproteins from tellurium-enriched Spirulina platensis

OpenAIRE

Chen, Tianfeng; Yang,Fang; Wong,Ka-Hing; Yang,Yufeng; Li,Xiaoling; Jiang,Jie; Wu,Hualian; Zheng,Wenjie

2014-01-01

Fang Yang,1 Ka-Hing Wong,2 Yufeng Yang,3 Xiaoling Li,1 Jie Jiang,1 Wenjie Zheng,1 Hualian Wu,1 Tianfeng Chen1 1Department of Chemistry, Jinan University, Guangzhou, People’s Republic of China; 2Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong, People’s Republic of China; 3Institute of Hydrobiology, College of Life Science and Technology, Jinan University, Guangzhou, People’s Republic of China Abstract: Tellu...

Heat load of a GaAs photocathode in an SRF electron gun

International Nuclear Information System (INIS)

Wang Erdong; Zhao Kui; Jorg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; Wu Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes

2011-01-01

A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs. (authors)

RF-MMW Dipole Antenna Arrays From Laser Illuminated GaAs

National Research Council Canada - National Science Library

Umphenour, D

1998-01-01

High resistivity photoconductive Gallium Arsenide (GaAs) can be used as elemental Hertzian dipole antenna arrays in which the time varying dipole current is produced by temporally modulating a laser (0.63um...

Proceedings 43rd Stanford Geothermal Workshop

Energy Technology Data Exchange (ETDEWEB)

Simmons, Stuart; Kirby, Stefan; Verplanck, Philip; Kelley, Karen

2018-02-12

Herein we summarize the results of an investigation dealing with the concentrations and inventories of strategic, critical and valuable materials (SCVM) in produced fluids from geothermal and hydrocarbon reservoirs (50-250° C) in Nevada and Utah. Water samples were collected from thirty-four production wells across eight geothermal fields, the Uinta Basin oil/gas province in northeast Utah, and the Covenant oil field in southwestern Utah; additional water samples were collected from six hot springs in the Sevier Thermal Belt in southwestern Utah. Most SCVM concentrations in produced waters range from <0.1 to 100 µg/kg; the main exception is lithium, which has concentrations that range from <1000 to 25,000 ug/kg. Relatively high concentrations of gallium, germanium, scandium, selenium, and tellurium are measured too. Geothermal waters contain very low concentrations of REEs, below analytical detections limits (0.01 µg/kg), but the concentrations of lanthanum, cerium, and europium range from 0.05 to 5 µg/kg in Uinta basin waters. Among the geothermal fields, the Roosevelt Hot Spring reservoir appears to have the largest inventories of germanium and lithium, and Patua appears to have the largest inventories of gallium, scandium, selenium, and tellurium. By comparison, the Uinta basin has larger inventories of gallium. The concentrations of gallium, germanium, lithium, scandium, selenium, and tellurium in produced waters appear to be partly related to reservoir temperature and concentrations of total dissolved salts. The relatively high concentration and large inventory of lithium occurring at Roosevelt Hot Springs may be related to granitic-gneissic crystalline rocks, which host the reservoir. Analyses of calcite scales from Dixie Valley indicate enrichments in cobalt, gallium, gold, palladium, selenium and tellurium, and these metals appear to be depositing at deep levels in production wells due to boiling. Comparisons with SCVM mineral deposits suggest that

Electrochemical Deposition of CdTe Semiconductor Thin Films for Solar Cell Application Using Two-Electrode and Three-Electrode Configurations: A Comparative Study

Directory of Open Access Journals (Sweden)

O. K. Echendu

2016-01-01

Full Text Available Thin films of CdTe semiconductor were electrochemically deposited using two-electrode and three-electrode configurations in potentiostatic mode for comparison. Cadmium sulphate and tellurium dioxide were used as cadmium and tellurium sources, respectively. The layers obtained using both configurations exhibit similar structural, optical, and electrical properties with no specific dependence on any particular electrode configuration used. These results indicate that electrochemical deposition (electrodeposition of CdTe and semiconductors in general can equally be carried out using two-electrode system as well as the conventional three-electrode system without compromising the essential qualities of the materials produced. The results also highlight the advantages of the two-electrode configuration in process simplification, cost reduction, and removal of a possible impurity source in the growth system, especially as the reference electrode ages.

Charge transport properties of CdMnTe radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

2012-04-11

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

Activities of the Solid State Physics Research Institute

Science.gov (United States)

1985-01-01

Topics addressed include: muon spin rotation; annealing problems in gallium arsenides; Hall effect in semiconductors; computerized simulation of radiation damage; single-nucleon removal from Mg-24; and He-3 reaction at 200 and 400 MeV.

Control of interferences in the analysis of low-concentration I 129

International Nuclear Information System (INIS)

Quintana, Eduardo E.; Thyssen, Sandra M.

1999-01-01

Traces of uranium, cesium and tellurium interfere in the determination of I 129 by neutron activation analysis. The paper describes the procedures used to control or eliminate the interferences in the different steps of the analysis

Investigating body function

International Nuclear Information System (INIS)

Monks, R.; Riley, A.L.M.

1981-01-01

This invention relates to the investigation of body function, especially small bowel function but also liver function, using bile acids and bile salts or their metabolic precursors labelled with radio isotopes and selenium or tellurium. (author)

Electron transport in erbium arsenide:indium gallium(aluminum)arsenide metal/semiconductor nanocomposites for thermoelectric power generation

Science.gov (United States)

Bahk, Je-Hyeong

Electron transport in thin film ErAs:InGa(Al)As metal/semiconductor nanocomposite materials grown by molecular beam epitaxy is investigated experimentally and theoretically for efficient thermoelectric power generation. Thermoelectric properties such as the Seebeck coefficient, the electrical conductivity, and the thermal conductivity are measured for the various compositions of the material up to 840 K. A special sample preparation method is proposed to protect the thin films from damage and/or decomposition, and prevent the parasitic substrate conduction effect during the high temperature measurements. The sample preparation method includes surface passivation, high temperature metallization with a diffusion barrier, and the covalent oxide bonding technique for substrate removal. The experimental results for the nanocomposite materials are analyzed using the Boltzmann transport equation under the relaxation time approximation. The scattering characteristics of free electrons in the InGa(Al)As is defined by four major scattering mechanisms such as the polar optical phonon scattering, the ionized impurity scattering, the alloy scattering, and the acoustic phonon deformation potential scattering. Combining these scattering mechanisms, the electron transport model successfully fits the temperature-dependent thermoelectric properties of Si-doped InGaAlAs materials, and predicts the figure of merits at various doping levels in various Al compositions. The nanoparticle-electron interaction is modeled as a momentum scattering for free electrons caused by the electrostatic potential perturbation around nanoparticles and the band offset at the interface. The ErAs nanoparticles are assumed to be semi-metals that can donate electrons to the matrix, and positively charged after the charge transfer to build up the screened coulomb potential outside them. The nanoparticle scattering rate is calculated for this potential profile using the partial wave method, and used to analyze the enhancement of the Seebeck coefficient. Finally, the experimental results for the various compositions of the ErAs:InGa(Al)As nanocomposites are fit using the electron transport model and the nanoparticle scattering. It is shown that nanoparticle scattering can enhance the power factor via energy-dependent electron scattering in ErAs:InGaAs system. The figure of merit for the 0.6% ErAs:(InGaAs)0.8(InAlAs) 0.2 lattice matched to InP is measured to be 1.3 at 800 K, and the theory predicts that it can reach 1.9 at 1000 K.

Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

Science.gov (United States)

2016-09-27

it as-grown and it densifies as the H leaves when annealed above approximately 500 °C. This densification causes the film to contract, becoming...tensile. The final deposition recipe shown in the Appendix, Section 2 was found after numerous trials and results in a minimum between compressive...marks b) ULVAC etch: 500 -W ICP, 50-W RIE, 4 mT, 16-sccm BCl3, 4-sccm Ar, 12 s (~50 nm)  GaAs etches at 7.54 nm/s after 6-s etch delay. PR etches at

Comparative study on the bioactivation mechanisms and cytotoxicity of Te-phenyl-L-tellurocysteine, Se-phenyl-L-selenocysteine, and S-phenyl-L-cysteine

NARCIS (Netherlands)

Rooseboom, Martijn; Vermeulen, Nico P E; Durgut, Fatma; Commandeur, Jan N M

2002-01-01

Tellurium compounds are effective antioxidants and chemoprotectors, even more active than their selenium and sulfur analogues. In addition to these properties, some selenium compounds, such as selenocysteine Se-conjugates, possess significant chemopreventive and antitumor activities, and selenol

Coupled Photonic Crystal Cavity Array Laser

DEFF Research Database (Denmark)

Schubert, Martin

in the quadratic lattice. Processing techniques are developed and optimized in order fabricate photonic crystals membranes in gallium arsenide with quantum dots as gain medium and in indium gallium arsenide phosphide with quantum wells as gain medium. Several key issues in process to ensure good quality....... The results are in good agreement with standard coupled mode theory. Also a novel type of photonic crystal structure is proposed called lambda shifted cavity which is a twodimensional photonic crystal laser analog of a VCSEL laser. Detailed measurements of the coupled modes in the photonic crystals...... with quantum dots are carried out. In agreement with a simple gain model the structures do not show stimulated emission. The spectral splitting due to the coupling between single cavities as well as arrays of cavities is studied theoretically and experimentally. Lasing is observed for photonic crystal cavity...

Metamaterial-Enhanced Nonlinear Terahertz Spectroscopy

Directory of Open Access Journals (Sweden)

Zhang X.

2013-03-01

Full Text Available We demonstrate large nonlinear terahertz responses in the gaps of metamaterial split ring resonators in several materials and use nonlinear THz transmission and THz-pump/THz-probe spectroscopy to study the nonlinear responses and dynamics. We use the field enhancement in the SRR gaps to initiate high-field phenomena at lower incident fields. In vanadium dioxide, we drive the insulator-to-metal phase transition with high-field THz radiation. The film conductivity increases by over two orders of magnitude and the phase transition occurs on a several picosecond timescale. In gallium arsenide, we observe high-field transport phenomena, including mobility saturation and impact ionization. The carrier density increases by up to ten orders of magnitude at high fields. At the highest fields, we demonstrate THz-induced damage in both vanadium dioxide and gallium arsenide.

Comparison of Se and Te clusters produced by ion bombardment

Directory of Open Access Journals (Sweden)

Trzyna Małgorzata

2017-01-01

Full Text Available Nanostructures based on tellurium and selenium are materials used as components for the manufacturing topological insulators. Therefore it is crucial to precisely characterize these materials. In this work the emission of selenium and tellurium cluster ions, sputtered by Bi+ primary ion guns, was investigated by using Time-of-Flight Secondary Ion Mass Spectrometry (TOF SIMS. It has been found that BixTex and BixSex clusters appear in addition to Sex and Tex clusters in the mass range up to ~ 1300 m/z. Local maxima or minima (magic numbers are observed in the ion intensity versus a number of atoms per cluster for both positive and negative ions spectra for all types of clusters and primary ions used. These extrema can be attributed to different yield and stability of certain clusters but also to fragmentation of high-mass clusters.

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Energy Technology Data Exchange (ETDEWEB)

Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-11-15

The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

Systems and methods for the synthesis of high thermoelectric performance doped-SnTe materials

Science.gov (United States)

Ren, Zhifeng; Zhang, Qian; Chen, Gang

2018-02-27

A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 .mu.V/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 .mu.V/K at any temperature.

Calculation of 125Te NMR Chemical Shifts at the Full Four-Component Relativistic Level with Taking into Account Solvent and Vibrational Corrections: A Gateway to Better Agreement with Experiment.

Science.gov (United States)

Rusakova, Irina L; Rusakov, Yuriy Yu; Krivdin, Leonid B

2017-06-29

Four-component relativistic calculations of 125 Te NMR chemical shifts were performed in the series of 13 organotellurium compounds, potential precursors of the biologically active species, at the density functional theory level under the nonrelativistic and four-component fully relativistic conditions using locally dense basis set scheme derived from relativistic Dyall's basis sets. The relativistic effects in tellurium chemical shifts were found to be of as much as 20-25% of the total calculated values. The vibrational and solvent corrections to 125 Te NMR chemical shifts are about, accordingly, 6 and 8% of their total values. The PBE0 exchange-correlation functional turned out to give the best agreement of calculated tellurium shifts with their experimental values giving the mean absolute percentage error of 4% in the range of ∼1000 ppm, provided all corrections are taken into account.

Specific features of phase transformations in germanium monotelluride

International Nuclear Information System (INIS)

Bigvava, A.D.; Gabedava, A.A.; Kunchuliya, Eh.D.; Shvangiradze, R.R.

1981-01-01

Phase transformations in germanium monotelluride are studied . using DRON-0.5 and DRON-1 plants with high-temperature chamber GPVT-1500 at Cu, Ksub(α) radiation. It is shown that in the whole homogeneity range α GeTe is a metastable phase which is formed under the conditions of fast cooling of alloy from temperatures >=Tsub(cub) (temperature of transition in cubic crystal system). An equilibrium γ-phase is obtained by annealing of dispersed powders and metal-ceramic specimens of alloys with 50.3; 50.6; 50.9 at % Te. Lattice parameters of rhombic γ-phase do not depend on tellurium content in initial α- phase. α→γ transformation is observed at any temperature less than Tsub(cub) with the change of alloy composition, namely tellurium precipitation. γ-phase transforms into β at higher temperatures than α-phase [ru

Comparison of Se and Te clusters produced by ion bombardment

Science.gov (United States)

Trzyna, Małgorzata

2017-01-01

Nanostructures based on tellurium and selenium are materials used as components for the manufacturing topological insulators. Therefore it is crucial to precisely characterize these materials. In this work the emission of selenium and tellurium cluster ions, sputtered by Bi+ primary ion guns, was investigated by using Time-of-Flight Secondary Ion Mass Spectrometry (TOF SIMS). It has been found that BixTex and BixSex clusters appear in addition to Sex and Tex clusters in the mass range up to 1300 m/z. Local maxima or minima (magic numbers) are observed in the ion intensity versus a number of atoms per cluster for both positive and negative ions spectra for all types of clusters and primary ions used. These extrema can be attributed to different yield and stability of certain clusters but also to fragmentation of high-mass clusters.

POLLUTION PREVENTION IN THE SEMICONDUCTOR INDUSTRY THROUGH RECOVERY AND RECYCLING OF GALLIUM AND ARSENIC FROM GAAS POLISHING WASTES

Science.gov (United States)

A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

OM85. Basic Properties of Optical Materials Summaries of Papers.

Science.gov (United States)

1985-05-01

1984. [2] D. Marcuse : IEEE J. QE-14, 736 (1978). 163 ... . . . .. . . .. . . CALORIMETRIC MEASUREMENT OF OPTICAL ABSORPTION IN SAPPHIRE AT VISIBLE...ARSENIDE Herbert S. Bennett Semiconductor Devices and Circuits Division National Bureau of Standards Gaithersburg, MD 20899 Introduction Lasers, opto

Face to Face The IGBT and its Creator

Indian Academy of Sciences (India)

IAS Admin

HC: At RPI you had the chance to work on Indium Gallium Arsenide (InGaAs) ..... Safe operating area denotes the current and voltage conditions under which ... conditioning, refrigeration and so on, but what is the impact on the environment?

Suitability of integrated protection diodes from diverse semiconductor technologies

NARCIS (Netherlands)

van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

2009-01-01

Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

Modulation of fluorescence signals from biomolecules along nanowires due to interaction of light with oriented nanostructures

DEFF Research Database (Denmark)

Frederiksen, Rune Schøneberg; Alarcon-Llado, Esther; Madsen, Morten H.

2015-01-01

High aspect ratio nanostructures have gained increasing interest as highly sensitive platforms for biosensing. Here, well-defined biofunctionalized vertical indium arsenide nanowires are used to map the interaction of light with nanowires depending on their orientation and the excitation waveleng...

Configurational rearrangements of bistable centers in covalent semiconductors - phase transitions of the second type

International Nuclear Information System (INIS)

Ivanyukovich, V.A.; Karas', V.I.; Lomako, V.M.

1989-01-01

A new radiation configurational-bistable defect diffring from the known similar defects by the fact that it possessestemperature inversion of states is detected in gallium arsenide. Configurational-bistable rearrangements are shown to be considered as phase transitions of the second type

ThP05 Biogeneration of Volatile Selenium Compounds in Biosolids/Biofuels and Quantification by VD/GC/ICPMS

Science.gov (United States)

A noval analytical approach that uses VD/GC/ICPMS for the on-line extraction and quantificationof volatile organopmetalloids is described. Several species of arsenic, selenium, antimony, bismuth and tellurium are amenable to this technique. Preliminary results of a study on the...

Principles for prevention of toxic effects from metals

DEFF Research Database (Denmark)

Landrigan, Philip J.; Kotelchuk, David; Grandjean, Philippe

2007-01-01

of the Toxic Effects of Metals Aluminum Antimony Arsenic Barium Beryllium Bismuth Cadmium Chromium Cobalt Copper Gallium and Semiconductor Compounds Germanium Indium Iron Lead Manganese Mercury Molybdenum Nickel Palladium Platinum Selenium Silver Tellurium Thallium Tin Titanium Tungsten Uranium Vanadium Zinc...

77 FR 47030 - Seamless Refined Copper Pipe and Tube From the People's Republic of China: Preliminary Results of...

Science.gov (United States)

2012-08-07

... 0.8 Te--Tellurium 0.8 Zn--Zinc 1.0 Zr--Zirconium 0.3 Other elements (each) 0.3 Excluded from the... and sells a small amount of copper slag and copper ash; therefore, the Department has granted a by...

Seasonal study on Bothriocephalus as indicator of metal pollution in ...

African Journals Online (AJOL)

... vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, arsenic, selenium, molybdenum, cadmium, tin, antimony, tellurium, barium, mercury, thallium, lead and uranium) were determined with an ICP-MS. Bioconcentration of metals (selenium, mercury, and lead during autumn; copper, zinc, selenium, cadmium, ...

Effect of gamma radiation on optical and electrical properties of ...

Indian Academy of Sciences (India)

Wintec

Tellurium dioxide; thin films; optical bandgap; gamma radiation dose; dosimeter. 1. Introduction. It is now ... material to ionizing radiations (such as X-rays, gamma rays, beta ..... Mag. 19 19. Mott N F and Davis E 1979 Electronic process in non-.

Neutron transmutation doping of gallium arsenide

International Nuclear Information System (INIS)

Alexiev, D.

1987-12-01

Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm 3 per cm 2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated

Gallium Arsenide and Related Compounds, 1986.

Science.gov (United States)

1986-01-01

F-Yiuang, WL,, PK Rhattacharva, UDas, A Chin , IJlackson and D L Persechini 417 -422 High quality lattice matched lnGaAs/InP heterostructures prepared...Sci. Technol. B3 1162. Schwartz G. P. 1983 Thin solid Films 103 3. Spicer W. E., Lindau I., Skeath P. R., Su C Y. and Chye P. W. 19R0 Phys. Rev. Lett... Chin R, Nakano K, and Milano R A 1981 IEEE J. Quantum Electron. QEJJ7, 275. Murgatroyd I J, Norman A G, and Booker G R 1986 Phys. Rev. Lett

The origin of the Avram Iancu U-Ni-Co-Bi-As mineralization, Băiţa (Bihor) metallogenic district, Bihor Mts., Romania

Science.gov (United States)

Zajzon, Norbert; Szentpéteri, Krisztián; Szakáll, Sándor; Kristály, Ferenc

2015-10-01

The Băiţa metallogenic district in the Bihor Mountains is a historically important mining area in Romania. Uranium mining took place between 1952 and 1998 from various deposits, but very little is known about the geology and mineralogy of these deposits. In this paper, we describe geology and mineralogy of uranium mineralization of the Avram Iancu uranium mine from waste dump samples collected before complete remediation of the site. Texturally and mineralogically complex assemblages of nickeline, cobaltite-gersdorffite solid solution, native Bi, Bi-sulfosalts, molybdenite, and pyrite-chalcopyrite-sphalerite occur with uraninite, "pitchblende," and brannerite in most of the ore samples. The association of nickel, cobalt, and arsenic with uranium is reminiscent of five-element association of vein type U-Ni-Co-Bi-As deposits; however, the Avram Iancu ores appear to be more replacement-type stratiform/stratabound. Avram Iancu ore samples contain multistage complex, skarn, uranium sulfide, arsenide assemblages that can be interpreted to have been formed in the retrograde cooling stages of the skarn hydrothermal system. This mineralizing system may have built-up along Upper Cretaceous-Paleogene "Banatite" intrusions of diorite-to-granite composition. The intrusions crosscut the underlying uraniferous Permian formations in the stacked NW-verging Biharia Nappe System. The mineralization forms stacked, multilayer replacement horizons, along carbonate-rich lithologies within the metavolcanic (tuffaceous) Muncel Series. Mineral paragenesis and some mineral chemistry suggest moderate-to-high <450, i.e., 350-310 °C, formation temperatures for the uranium sulfide stage along stratigraphically controlled replacement zones and minor veins. Uranium minerals formed abundantly in this early stage and include botryoidal, sooty and euhedral uraninite, brannerite, and coffinite. Later and/or lower-temperature mineral assemblages include heterogeneous, complexly zoned arsenide

Tetrabromido[4-(triphenylphosphanyloxybutyl]tellurium acetonitrile monosolvate

Directory of Open Access Journals (Sweden)

Sari M. Närhi

2013-02-01

Full Text Available In the title compound, [TeBr4(C22H23OP]·CH3CN, the Te atom exhibits a square-pyramidal coordination with an apical Te—C bond and four basal Te—Br bonds. The conformation of the aliphatic C—C—C—C chain is gauche [torsion angle = −67.7 (8°]. A weak C—H...Br interaction helps to establish the conformation. In the crystal, there is a weak secondary bonding interaction [Te...N = 3.456 (11 Å] between the Te atom and the N atom of the solvent molecule, which completes a distorted TeNCBr4 octahedron. Inversion dimers linked by pairs of C—H...Br interactions are also observed.

Tellurium purification: various techniques and limitations

Indian Academy of Sciences (India)

Unknown

-chemical techniques such as vacuum distillation and zone refining are discussed. It was found that the clean environments, design, handling and cleaning of quartz ware are equally important in achieving the desired purity levels. Keywords.

Low temperature transport in p-doped InAs nanowires

DEFF Research Database (Denmark)

Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal

2013-01-01

We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature...

Variations in first principles calculated defect energies in GaAs and ...

Indian Academy of Sciences (India)

Keywords. Ab initio calculations; semi-insulating GaAs; point defects. ... We are focusing on gallium arsenide. .... gallium vacancy in S & L, P et al and N & Z will exist in triple ... gallium antisite defect that include relaxation, a negative. U-effect is ...

Mining and Metal Pollution: Assessment of Water Quality in the ...

African Journals Online (AJOL)

Michael

2017-12-02

Dec 2, 2017 ... arsenides and metallic sulphides of As, Au, Cu, Fe,. Zn, Pb and Sb. In gold .... hydroxides of aluminium, iron, manganese and lead. Reactive minerals such ..... seen to form the complex Fe(OH)3, representing 83. % of the total ...

The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

Science.gov (United States)

Steel, G. G.

1970-01-01

Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

Characterising refractive index dispersion in chalcogenide glasses

DEFF Research Database (Denmark)

Fang, Y.; Sojka, L.; Jayasuriya, D.

2016-01-01

Much effort has been devoted to the study of glasses that contain the chalcogen elements (sulfur, selenium and tellurium) for photonics' applications out to MIR wavelengths. In this paper we describe some techniques for determining the refractive index dispersion characteristics of these glasses...

Multi-spectral optical absorption in substrate-free nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray, E-mail: lapierr@mcmaster.ca [Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario L8S 4L7 (Canada); Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada); Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada)

2014-09-22

A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper.

Science.gov (United States)

Jung, Yei Hwan; Chang, Tzu-Hsuan; Zhang, Huilong; Yao, Chunhua; Zheng, Qifeng; Yang, Vina W; Mi, Hongyi; Kim, Munho; Cho, Sang June; Park, Dong-Wook; Jiang, Hao; Lee, Juhwan; Qiu, Yijie; Zhou, Weidong; Cai, Zhiyong; Gong, Shaoqin; Ma, Zhenqiang

2015-05-26

Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials.

The geology of the Collins Bay uranium deposit, Saskatchewan

International Nuclear Information System (INIS)

Jones, B.E.

1980-01-01

The Collins Bay deposit lies within the Churchill Province on the western edge of the Wollaston lithostructural domain where it underlies the eastern edge of the Helikian Athabasca Formation. It is 6 miles north-northeast of the Rabbit Lake mine. Two principal zones of uranium mineralization are described. The A zone, a partly eroded, high-grade pod of metal oxide and arsenides sheathed by clay-like minerals, which trends north-northeast and lies under 25 to 40 feet of water; and the B zone, which lies 6 000 ft south of the A, subcrops under till cover and is a partly eroded zone composed of metal oxide and arsenides which occur within variably altered Athabasca Formation. The deposit is typical of the unconformity-type uranium-nickel deposits of the Athabasca Basin. Observed features fit well with the diagenetic-hydrothermal model for such deposts. (auth)

Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

Science.gov (United States)

Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

1987-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

Properties of GaAs:Cr-based Timepix detectors

Science.gov (United States)

Smolyanskiy, P.; Bergmann, B.; Chelkov, G.; Kotov, S.; Kruchonak, U.; Kozhevnikov, D.; Mora Sierra, Y.; Stekl, I.; Zhemchugov, A.

2018-02-01

The hybrid pixel detector technology brought to the X-ray imaging a low noise level at a high spatial resolution, thanks to the single photon counting. However, silicon as the most widespread detector material is marginally sensitive to photons with energies above 30 keV. Therefore, the high-Z alternatives to silicon such as gallium arsenide and cadmium telluride are increasingly attracting attention of the community for the development of X-ray imaging systems. The results of our investigations of the Timepix detectors bump bonded to sensors made of gallium arsenide compensated by chromium (GaAs:Cr) are presented in this work. The following properties are most important from the practical point of view: the IV characteristics, the charge transport characteristics, photon detection efficiency, operational stability, homogeneity, temperature dependence, as well as energy and spatial resolution are considered. The applicability of these detectors for spectroscopic X-ray imaging is discussed.

Zn2(TeO3Br2

Directory of Open Access Journals (Sweden)

Mats Johnsson

2008-05-01

Full Text Available Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetrahedra, and [TeO3E] tetrahedra (E being the 5s2 lone pair of Te4+ joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3Br2 is isostructural with the synthetic compounds Zn2(TeO3Cl2, CuZn(TeO32, Co2(TeO3Br2 and the mineral sophiite, Zn2(SeO3Cl2.

Charge transport properties of CdMnTe radiation detectors

Directory of Open Access Journals (Sweden)

Prokopovich D. A.

2012-10-01

Full Text Available Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55 cm2/Vs at room temperature.

Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

Science.gov (United States)

Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

2013-03-01

Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

Medical Applications and Toxicities of Gallium Compounds

Directory of Open Access Journals (Sweden)

Christopher R. Chitambar

2010-05-01

Full Text Available Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal models of human disease while more recent studies have shown that gallium compounds may function as antimicrobial agents against certain pathogens. In a totally different realm, the chemical properties of gallium arsenide have led to its use in the semiconductor industry. Gallium compounds, whether used medically or in the electronics field, have toxicities. Patients receiving gallium nitrate for the treatment of various diseases may benefit from such therapy, but knowledge of the therapeutic index of this drug is necessary to avoid clinical toxicities. Animals exposed to gallium arsenide display toxicities in certain organ systems suggesting that environmental risks may exist for individuals exposed to this compound in the workplace. Although the arsenic moiety of gallium arsenide appears to be mainly responsible for its pulmonary toxicity, gallium may contribute to some of the detrimental effects in other organs. The use of older and newer gallium compounds in clinical medicine may be advanced by a better understanding of their mechanisms of action, drug resistance, pharmacology, and side-effects. This review will discuss the medical applications of gallium and its mechanisms of action, the newer gallium compounds and future directions for development, and the toxicities of gallium compounds in current use.

Separation of 99Mo from 132Te using thiourea as complexing agent. Application to the separation of 99Mo from the fission products

International Nuclear Information System (INIS)

Mestnik, S.A.C.

1987-01-01

A radiochemical method to isolate 99 Mo from 132 Te both produced in the fission of 235 U has been developed. The method is based on the formation of a cationic complex of tellurium with thiourea in acid medium wich is retained (98.7+-0.5) % on a cation exchange resin (Dowex 50W-X8, 100-200 mesh) wile (99.8+-0.05)% 99 Mo passes through it, due to the non formation of such complex in the same experimental conditions. The radiochemical purity of the separated 99 Mo verified by using gamma spectrometry was found to be suitable for the preparation of 99 Mo- 99m Tc generators. The retention of 99 Mo on an alumina column as function of pH was investigated. The best pH range for this purpose was found to be between 4.0-4.5. Yellow crystals with melting point of 115 0 C were formed when non-irradiated tellurium reacted with thiourea. Elemental analysis, ultra-violet and infra-red absorption spectrophotometry as well as thermogravimetry were used to characterize the complex formed. In the studies made in order to characterize the compound it has been observed: 1. the most probable chemical composition of the complex studied is [Te(SCN 2 H 4 ) 4 ] (SO 4 ) 2 ; 2. the coordination takes place between tellurium and sulphur atoms; 3. the maximum absorption in the ultra-violet region occurs near 310nm. The thermogravimetric curves obtained allowed to propose the concerned thermodecomposition mechanism. (author) [pt

Improvement of the obtention process of {sup 131} I of ININ through studies of equipment design and process parameters fitting in the simulator; Perfeccionamiento del proceso de obtencion del {sup 131} I del ININ mediante estudios de diseno del equipo y ajustes de parametros del proceso en el simulador

Energy Technology Data Exchange (ETDEWEB)

Zepeda M, M C

2006-07-01

The main objective of the work was to achieve a high yield of the reaction that happens among the vapors of {sup 131} I and the NaOH to obtain sodium iodide (Na{sup 131} I) in solution optimizing the contact time of the molecules in gaseous state of {sup 131} I with the NaOH molecules through the bubbling velocity of the {sup 131} I in the solution of NaOH 0.1 N, as well as the operation temperature during the distillation process by dry via starting from tellurium dioxide (TeO{sub 2}) with the purpose of that the {sup 131} I that is obtained in the form of Na{sup 131} I solution presents the necessary quality that allows to distribute it in the market. The particular objectives were: a) To improve the distillation equipment used for the obtaining of {sup 131} I starting from irradiated tellurium dioxide redrawing the dilution system with the purpose of recovering the {sup 131} I in a minimum volume of sodium hydroxide (NaOH). b) To achieve a bigger time of contact among the molecules of {sup 131} I in gaseous state with the molecules of NaOH in solution through the bubbling velocity and of the redrawing of the dilution system. c) To implement the production of {sup 131} I by dry distillation via starting from tellurium dioxide, obtaining it with a high radionuclide and radiochemical purity. d) To obtain {sup 131} I with the necessary specifications that it marks the pharmacopoeia and it can be used with medical ends. (Author)

Improvement of the obtention process of 131 I of ININ through studies of equipment design and process parameters fitting in the simulator

International Nuclear Information System (INIS)

Zepeda M, M.C.

2006-01-01

The main objective of the work was to achieve a high yield of the reaction that happens among the vapors of 131 I and the NaOH to obtain sodium iodide (Na 131 I) in solution optimizing the contact time of the molecules in gaseous state of 131 I with the NaOH molecules through the bubbling velocity of the 131 I in the solution of NaOH 0.1 N, as well as the operation temperature during the distillation process by dry via starting from tellurium dioxide (TeO 2 ) with the purpose of that the 131 I that is obtained in the form of Na 131 I solution presents the necessary quality that allows to distribute it in the market. The particular objectives were: a) To improve the distillation equipment used for the obtaining of 131 I starting from irradiated tellurium dioxide redrawing the dilution system with the purpose of recovering the 131 I in a minimum volume of sodium hydroxide (NaOH). b) To achieve a bigger time of contact among the molecules of 131 I in gaseous state with the molecules of NaOH in solution through the bubbling velocity and of the redrawing of the dilution system. c) To implement the production of 131 I by dry distillation via starting from tellurium dioxide, obtaining it with a high radionuclide and radiochemical purity. d) To obtain 131 I with the necessary specifications that it marks the pharmacopoeia and it can be used with medical ends. (Author)

Organoselenium compounds prevent hyperphosphorylation of cytoskeletal proteins induced by the neurotoxic agent diphenyl ditelluride in cerebral cortex of young rats

International Nuclear Information System (INIS)

Moretto, M.B.; Funchal, C.; Zeni, G.; Rocha, J.B.T.; Pessoa-Pureur, R.

2005-01-01

In this work we investigated the protective ability of the selenium compounds ebselen and diphenyl diselenide against the effect of diphenyl ditelluride on the in vitro incorporation of 32 P into intermediate filament (IF) proteins from slices of cerebral cortex of 17-day-old rats. We observed that ditelluride in the concentrations of 1, 15 and 50 μM induced hyperphosphorylation of the high-salt Triton insoluble neurofilament subunits (NF-M and NF-L), glial fibrillary acidic protein (GFAP) and vimentin, without altering the immunocontent of these proteins. Concerning the selenium compounds, diselenide (1, 15 and 50 μM) did not induce alteration of the in vitro phosphorylation of the IF proteins. Otherwise, ebselen induced an altered in vitro phosphorylation of the cytoskeletal proteins in a dose-dependent manner. At intermediate concentrations (15 and 30 μM) it increased the in vitro phosphorylation even though, at low (5 μM) or high (50 and 100 μM) concentrations this compound was ineffective in altering the activity of the cytoskeletal-associated phosphorylating system. In addition, 15 μM diselenide and 5 μM ebselen, presented a protective effect against the action of ditelluride, on the phosphorylation of the proteins studied. Considering that hyperphosphorylation of cytoskeletal proteins is associated with neuronal dysfunction and neurodegeneration, it is probable that the effects of ditelluride could be related to the remarkable neurotoxicity of this organic form of tellurium. Furthermore the neuroprotective action of selenium compounds against tellurium effects could be a promising route to be exploited for a possible treatment of organic tellurium poisoning

Pramana – Journal of Physics | Indian Academy of Sciences

Indian Academy of Sciences (India)

Electronic switching in amorphous chalcogenide semiconductors has been observed and studied for nearly forty years. Technological exploitation of this phenomenon has most recently emerged in DVD's where GST, a compound of germanium, antimony, and tellurium, is used to store information. We explain how GST ...

Crystallography of the Sb-Te-Ni system

Czech Academy of Sciences Publication Activity Database

Laufek, F.; Drábek, M.; Skála, Roman; Císařová, I.

2005-01-01

Roč. 12, č. 2 (2005), s. 153-154 ISSN 1211-5894 Grant - others:GAUK(CZ) 43-203391 Institutional research plan: CEZ:AV0Z30130516 Keywords : crystallography * antimony * tellurium Subject RIV: DB - Geology ; Mineralogy http:// xray .cz/ms/bul2005-2/student3.pdf

Clinical evaluation of dentin hypersensitivity treatment with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl Avaliação clínica do tratamento da hiperestesia dentinária com laser de baixa potência de Arseniato de Gálio-Alumínio - AsGaAl

Directory of Open Access Journals (Sweden)

Luciana Chucre Gentile

2004-12-01

Full Text Available The dentin hypersensitivity is a painful condition rather prevalent in the general population. There are several ways of treatment for such condition, including the low intensity lasers. The proposal of this study was to verify the effectiveness of the Gallium-Aluminum-Arsenide diode laser in the treatment of this painful condition, using a placebo as control. MATERIALS AND METHODS: Thirty-two patients were selected, 22 females and 10 males, with ages ranging from 20 to 52 years old. The 32 patients were randomly distributed into two groups, treated and control; the sample consisted of 68 teeth, 35 in the treated group and 33 in the control group. The treated group was exposed to six laser applications with intervals from 48 to 72 hours, and the control group received, as placebo, applications of a curing light. RESULTS: A significant reduction was observed in the pain condition between the initial phase and after six laser applications; however, such reduction could also be observed for the control group exposed to the placebo. CONCLUSION: Therapy with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl induces a statistically significant reduction in the painful condition after each application and between the beginning and end of treatment, although there was no statistically significant difference between the treated group (laser and the control group (placebo at the end of treatment and after the mediate evaluation results (after 6 weeks, this way impairing the real measurement of laser effectiveness and placebo effect.A hiperestesia dentinária trata-se de uma condição dolorosa bastante prevalente nas populações mundiais. Várias são as modalidades de tratamento para tal condição, entre elas, os lasers de baixa potência. A proposta deste estudo foi a de verificar a efetividade do laser de diodo de Arseniato de Gálio-Alumínio no tratamento desta condição dolorosa, utilizando-se um placebo como controle. MATERIAIS E M�

500 MHz transient digitizers based on GaAs CCDs

International Nuclear Information System (INIS)

Bryman, D.; Cresswell, J.V.; LeNoble, M.; Poutissou, R.

1990-10-01

A wide bandwidth transient digitizer based on a recently produced gallium arsenide charged coupled device is under development. The CCDs have 128 pixels and operate at 500 MHz. Initial testing of prototype modules in Experiment 787 at Brookhaven National Laboratory is reported. (Author) (8 refs., 10 figs.)

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

NARCIS (Netherlands)

Prins, M.W.J.; Jansen, R.; Kempen, van H.

1996-01-01

We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate

Spin-dependent transport in metal/semiconductor tunnel junctions

NARCIS (Netherlands)

Prins, M.W.J.; Kempen, van H.; Leuken, Van H.; Groot, de R.A.; Roy, van W.; De Boeck, J.

1995-01-01

This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to

Solidification of highly active wastes

International Nuclear Information System (INIS)

Morris, J.B.

1984-11-01

Final reports are presented on work on the following topics: glass technology; enhancement of off-gas aerosol collection; formation and trapping of volatile ruthenium; volatilisation of caesium, technetium and tellurium in high-level waste vitrification; deposition of ruthenium; and calcination of high-level waste liquors. (author)

Study and characterization of semi-conductor materials III-V for their applications to the ionizing radiation detection

International Nuclear Information System (INIS)

Moulin, H.

1989-01-01

This work is the study of photoconduction in volume of gallium arsenide and of indium phosphide doped with iron for their applications to X-ray detection which is carried out directly in the material. After having recalled the physical characterization of materials and the principle of photoconduction, we describe two informatic simulations. The first supposes the spatial uniformity of the electric field on the semiconductor, the second takes the spatial and temporal variations of the field into consideration. Then we show the advantage of a first irradiation to neutrons of the photoconductors. With the gallium arsenide there is swiftness improvement of the detectors to the detriment of the sensitivity. The second part studies first the characterizations in the obscurity of the photoconductors according to the electric polarization field and to the neutron dose they received before and then their characterizations under X radiation. 77 refs., 221 figs., 33 tabs., 6 photos., 3 annexes

Tandem for power generation. New sandwich concentrator cell with over 30% efficiency; Im Tandem Strom erzeugen. Neue Mehrschicht-Konzentratorzelle erzielt ueber 30% Wirkungsgrad

Energy Technology Data Exchange (ETDEWEB)

Anon.

2000-11-01

The Fraunhofer-Institut fuer Solare Energiesysteme at Freiburg, Germany, claims a 'best ever' efficiency of a monolithic tandem concentrator solar cell with a sandwich structure based on gallium-indium arsenide and gallium-indium phosphide. The new solar cell can be produced in a single process based on an Aixtron AG (Aachen, Germany) separator which is also used for industrial production of solar cells for aerospace applications. [German] Das Fraunhofer-Institut fuer Solare Energiesysteme in Freiburg hat einen neuen Wirkungsgradrekord fuer monolithische Tandem-Konzentratorsolarzellen gemeldet. Die Wissenschaftler am Fraunhofer-Institut fuer Solare Energiesysteme (Fraunhofer ISE) haben neue Schichtstrukturen auf der Basis von Gallium-Indium-Arsenid und Gallium-Inidum-Phosphid entwickelt. Die neue Solarzelle kann in einem einzigen Prozess hergestellt werden. Fuer diesen Prozess setzen die Freiburger Solarzellenforscher eine Abscheideanlage der Firma Aixtron AG aus Aachen ein, wie sie auch in der Industrie zur Herstellung von Solarzellen fuer Anwendungen im Weltraum genutzt wird. (orig.)

Transformational III-V Electronics

KAUST Repository

Nour, Maha A.

2014-04-01

Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

Heat load of a P-doped GaAs photocathode in SRF electron gun

International Nuclear Information System (INIS)

Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Jain, A.; Gupta, R.; Holmes, D.

2010-01-01

Many efforts were made over the last decades to develop a better polarized electron source for the high energy physics. Several laboratories operate DC guns with the Gallium-Arsenide photo-cathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved using a Superconducting RF electron gun, which delivers beams of higher brightness than DC guns does, because the field gradient at the cathode is higher. SRF guns with metal cathodes and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since the cathode will be normal conducting, the problem about the heat load stemming from the cathode arises. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and the verification by measuring the quality factor of the gun with and without cathode.

MOCVD process technology for affordable, high-yield, high-performance MESFET structures. Phase 3: MIMIC

Science.gov (United States)

1993-01-01

Under the MIMIC Program, Spire has pursued improvements in the manufacturing of low cost, high quality gallium arsenide MOCVD wafers for advanced MIMIC FET applications. As a demonstration of such improvements, Spire was tasked to supply MOCVD wafers for comparison to MBE wafers in the fabrication of millimeter and microwave integrated circuits. In this, the final technical report for Spire's two-year MIMIC contract, we report the results of our work. The main objectives of Spire's MIMIC Phase 3 Program, as outlined in the Statement of Work, were as follows: Optimize the MOCVD growth conditions for the best possible electrical and morphological gallium arsenide. Optimization should include substrate and source qualification as well as determination of the optimum reactor growth conditions; Perform all work on 75 millimeter diameter wafers, using a reactor capable of at least three wafers per run; and Evaluate epitaxial layers using electrical, optical, and morphological tests to obtain thickness, carrier concentration, and mobility data across wafers.

Diffusion in Intrinsic and Highly Doped III-V Semiconductors

CERN Multimedia

Stolwijk, N

2002-01-01

%title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

Celebrating Two Centuries of Research in Selenium Chemistry: State of the Art and New Prospective

Directory of Open Access Journals (Sweden)

Claudio Santi

2017-12-01

Full Text Available In 2017, the 200th anniversary of the discovery of selenium was celebrated. In 1817, the Swedish chemists, Berzelius and Gahn, on roasting 200 kg of sulfur from a pyrite from the Falun mine, obtained about 3 g of a precipitate that they first wrongly identified as tellurium. Berzelius doubted this result and repeated the analysis some months later realizing that a new element was in his hands and he named this element Selenium (Greek: Selene, moon in consideration of its resemblance to Tellurium (Latin: Tellus, earth. Several events were organized in the year for this special celebration and this Special Issue would like to be an additional contribution to the success of a research that, especially during the last decades, rapidly grew in different fields: synthesis, medicinal chemistry, biology, material, and environment. These studies are strongly characterized by multi- and interdisciplinary connections, and, for this reason, we collected here contributions coming from different areas and disciplines, not exclusively synthetic organic chemistry.

Chemical interaction between (Cs-Te) doped fuels and cladding material under irradiation

International Nuclear Information System (INIS)

Delbrassine, A.; Flipot, A.J.

1977-01-01

Pins containing UO 2 -30 wt.% PuO 2 low density pellets and or caesium and or tellurium as doping elements have been irradiated for about 40 days in the BR 2 reactor. The effect of two Cs/Te ratios, namely 1.3 and 4, and a wide range of O/M ratios on the inner corrosion of the clad has been investigated. The influence of tellurium on the attack of the cladding has been pointed out. It may be responsible for the chromium and nickel depletion in the grain boundaries of the steal. The corrosion patterns and the thickness of the corroded layer could be different in the total length of a fuel pin. It seems therefore necessary to measure the effective Cs/Te ratio associated with the local corrosion layers. This local Cs/Te ratio should be more useful than the initial mean Cs/Te ratio in a pin for understanding the corrosion phenomena. (author)

Zn2(TeO3)Br2

Science.gov (United States)

Zhang, Dong; Johnsson, Mats

2008-01-01

Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3)Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetra­hedra, and [TeO3 E] tetra­hedra (E being the 5s 2 lone pair of Te4+) joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3)Br2 is isostructural with the synthetic compounds Zn2(TeO3)Cl2, CuZn(TeO3)2, Co2(TeO3)Br2 and the mineral sophiite, Zn2(SeO3)Cl2. PMID:21202162

Delineation of phase fields at the Te-rich end of the Ru Te binary system

Science.gov (United States)

Ali (Basu), M.; Bharadwaj, S. R.; Das, D.

2005-04-01

The tellurium rich side of the ruthenium-tellurium binary system was studied by differential thermal analysis. To avoid reported problems of Te loss by evaporation and reactive interference of Te to the thermocouples of the thermal analyzer, the present study made use of specially designed sealed quartz capsules as DTA containers. The thermal analyses were carried out over the compositional range of 0.66 ⩽ xTe ⩽ 1.00 with the help of SETARAM TG/DTA and other indigenously built thermal analyzers available in this laboratory. The thermal data generated for fifteen different compositions were interpreted for the nature of phase transitions occurring at their characteristic temperatures. The Ru-Te binary system was found to have a eutectic transformation at 444 °C at a composition of xTe = 0.918 and a monotectic transformation at 447 °C at a composition of xTe = 0.700. Up to 6 at.% Ru is soluble in Te at about 440 °C.

Delineation of phase fields at the Te-rich end of the Ru-Te binary system

International Nuclear Information System (INIS)

Ali, M.; Bharadwaj, S.R.; Das, D.

2005-01-01

The tellurium rich side of the ruthenium-tellurium binary system was studied by differential thermal analysis. To avoid reported problems of Te loss by evaporation and reactive interference of Te to the thermocouples of the thermal analyzer, the present study made use of specially designed sealed quartz capsules as DTA containers. The thermal analyses were carried out over the compositional range of 0.66 x Te 1.00 with the help of SETARAM TG/DTA and other indigenously built thermal analyzers available in this laboratory. The thermal data generated for fifteen different compositions were interpreted for the nature of phase transitions occurring at their characteristic temperatures. The Ru-Te binary system was found to have a eutectic transformation at 444 deg. C at a composition of x Te = 0.918 and a monotectic transformation at 447 deg. C at a composition of x Te = 0.700. Up to 6 at.% Ru is soluble in Te at about 440 deg. C

Discussion on the electrical and thermoelectrical properties of amorphous In-Sb-Te Films

Energy Technology Data Exchange (ETDEWEB)

Aly, K.A. [University of Jeddah, Physics Department, Faculty of Science and Arts, Khulais, Jeddah (Saudi Arabia); Al-Azhar University, Assiut Branch, Physics Department, Faculty of Science, Asyut (Egypt); Saddeek, Y. [Al-Azhar University, Assiut Branch, Physics Department, Faculty of Science, Asyut (Egypt); Dahshan, A. [Port Said University, Department of Physics, Faculty of Science, Port Said (Egypt); King Khalid University, Department of Physics, Faculty of Science for Girls, Abha (Saudi Arabia)

2016-03-15

Different compositions of (In{sub 0.5}Sb{sub 0.5}){sub 1-x}Te{sub x} (0.50 ≤ x ≤ 0.65) thin films were prepared by thermal evaporated technique, onto pre-cleaned glass substrates at ∝298 K. Both dark electrical resistivity (ρ) and thermoelectric power (S) were measured in the temperature range 300-420 K. The concentration of the free carriers is obtained from DC conductivity and thermoelectric power measurements. Seebeck coefficient was found to be positive over entire temperature range, indicating that (In{sub 0.5}Sb{sub 0.5}){sub 1-x}Te{sub x} films are p-type semiconducting materials. Also, the variation of the mobility with temperature has been estimated. Increasing tellurium concentration is found to affect the DC conductivity and thermoelectric power of the studied films. The activation energies obtained from the DC conductivity and thermoelectric power increase with increasing tellurium content. The obtained results were interpreted according to the chemical bond approach. (orig.)

Thermodynamic analysis of the Cu2S-Cu2Te system using dissociation pressure data

International Nuclear Information System (INIS)

Glazov, V.M.; Pashinkin, A.S.; Burkhanov, A.S.; Saleeva, N.M.

1978-01-01

The Knudsen effusive method has been used for studying the dissociation pressure in the Cu 2 S-Cu 2 Te system, and on the basis of the experimental data obtained, the tellurium activity in the system and the mixing energy have been calculated. The dissociation pressure of pure components and alloys containing 10, 30, 50, 70, and 90 mol% of copper telluride within the temperature range of 750-1200 deg C has been studied. A smooth character of the concentration dependence of tellurium activity is observed, which points to the formation of a continuous series of solid solutions in the Cu 2 S-Cu 2 Te system within the temperature range studied. The data on the mixing energy in the system show a good agreement of the values obtained from the dissociation pressure with those determined from the fusibility diagram. The results indicate that the system in question is described well within the framework of the model of regular solutions

Fast Clock Recovery for Digital Communications

Science.gov (United States)

Tell, R. G.

1985-01-01

Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

Energy Technology Data Exchange (ETDEWEB)

Podkopaev, O. I. [Joint-Stock Company “Germanium” (Russian Federation); Shimanskiy, A. F., E-mail: shimanaf@mail.ru [Siberian Federal University (Russian Federation); Kopytkova, S. A.; Filatov, R. A. [Joint-Stock Company “Germanium” (Russian Federation); Golubovskaya, N. O. [Siberian Federal University (Russian Federation)

2016-10-15

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

Bioreduction of selenite and tellurite by Phanerochaete chrysosporium

NARCIS (Netherlands)

Espinosa‐Ortiz, E.J.

2015-01-01

Selenium (Se) and tellurium (Te) are elements, they are part of the chalcogens (VI‐A group of the periodic table) and share common properties. These metalloids are of commercial interest due to their physicochemical properties, and they have been used in a broad range of applications in advanced

Consequences of severe radioactive releases to Nordic Marine environment

DEFF Research Database (Denmark)

Iosjpe, M.; Isaksson, M.; Joensen, H.P.

- or minor – radioactive releases to Nordic marine environment. As a reference, the release amounts from a 3000 MWth reactor size were used. Based on source term analyses, the chosen release fractions in the study were: iodine 20% (of the total core inventory), caesium 10%, tellurium 10%, strontium 0...

Doping assessment in GaAs nanowires

DEFF Research Database (Denmark)

Goktas, N. Isik; Fiordaliso, Elisabetta Maria; LaPierre, R. R.

2018-01-01

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs...

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

International Nuclear Information System (INIS)

Podkopaev, O. I.; Shimanskiy, A. F.; Kopytkova, S. A.; Filatov, R. A.; Golubovskaya, N. O.

2016-01-01

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

Fundamental investigation of high temperature operation of field effect transistor devices

Science.gov (United States)

Chern, Jehn-Huar

In this dissertation copper germanium (CuGe)-based materials were investigated as potential ohmic contacts to n-type gallium arsenide (GaAs). The CuGe-based contacts to GaAs were found to not form any reaction products with GaAs and to have low contact resistance comparable to that of nickel gold germanium (NiAuGe) ohmic contacts to GaAs. The potential for high temperature applications using CuGe ohmic contacts was investigated. A guideline for further reduction of the contact resistance has been achieved after investigating the detailed mechanism of the formation of binary CuGe contacts over a wide range of Ge concentrations. The thermal stability of CuGe contacts was significantly enhanced and improved by introducing a diffusion barrier, titanium tungsten nitride (TiWNx), and a gold (Au) overlayer for high temperature applications. Novel approaches such as epitaxial thulium phosphide (TmP) Schottky contacts and the utilization of low temperature (LT)-aluminum gallium arsenide (AlGaAs) were also investigated in this dissertation and likely will be the standard technologies for a new generation of high-temperature electronics. Inserting a layer of aluminum arsenide (AlAs) underneath the channel of a GaAs-based MESFET was found to reduce substrate leakage currents by a factor of 30 compared with the same MESFET directly fabricated on a semi-insulating GaAs substrate. In addition to AlAs, and AlxGa1-xAs materials, new materials grown at low temperatures such as LT-AlGaAs were used in heterojunction FET structures as a back wall barrier. Low drain leakage currents were achieved using AlAs and LT-AlGaAs as the back wall barriers. Some fundamental properties regarding these materials are of great interest and in need of further characterization. Part of the work in this dissertation was devoted to the characterization of device performance for different structure designs at elevated temperatures. The suitability of GaAs-based and gallium arsenide (GaN)-based MESFET

An in-vacuum diffractometer for resonant elastic soft x-ray scattering

Czech Academy of Sciences Publication Activity Database

Hawthorn, D.G.; He, F.; Venema, L.; Davis, H.; Achkar, A.J.; Zhang, J.; Sutarto, R.; Wadati, H.; Radi, A.; Wilson, T.; Wright, G.; Shen, K.M.; Geck, J.; Zhang, H.; Novák, Vít; Sawatzky, G.A.

2011-01-01

Roč. 82, č. 7 (2011), 073104/1-073104/8 ISSN 0034-6748 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium arsenide * lanthanum compounds * manganese compounds * neodymium * reflectivity * semiconductor thin films * strontium compounds * X-ray diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.367, year: 2011

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

Science.gov (United States)

Yei Hwan Jung; Tzu-Hsuan Chang; Huilong Zhang; Chunhua Yao; Qifeng Zheng; Vina W. Yang; Hongyi Mi; Munho Kim; Sang June Cho; Dong-Wook Park; Hao Jiang; Juhwan Lee; Yijie Qiu; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma

2015-01-01

Today’s consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems...

Chalcogen-containing oxazolines in the palladium-catalyzed asymmetric allylic alkylation

Directory of Open Access Journals (Sweden)

Braga Antonio L.

2006-01-01

Full Text Available A comparative study about the ability of chiral chalcogen-containing oxazolines to act as chiral ligands in the palladium-catalyzed allylic alkylation of rac-1,3-diphenyl-2-propenyl acetate with dimethyl malonate is reported. Differences in the catalytic performance are observed with sulfur, selenium and tellurium analogues.

Bulletin of Materials Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science. Ch Sudheer. Articles written in Bulletin of Materials Science. Volume 25 Issue 6 November 2002 pp 545-547. Tellurium purification: various techniques and limitations · D S Prasad Ch Sudheer N R Munirathnam T L Prakash · More Details Abstract Fulltext PDF. Limitations and ...

Desorption of Te capping layer from ZnTe (100): Auger spectroscopy ...

African Journals Online (AJOL)

... configurations of tellurium Te (c (2x2)) and Te (c (2x1)) are confirmed by scanning tunneling microscopy (STM). Such a study reveals a phase transition from a rich-Te to a poor-Te surface as the annealing temperature increases. Keywords: Zinc Tellure; solar cells; structural properties; optoelectronics; semiconductors.

Luminescent converter of neodymium laser radiation

International Nuclear Information System (INIS)

Ryba-Romanowski, W.; Golab, S.

1992-01-01

The new luminescent converter of neodymium laser radiation has been worked out. Activated inorganic compounds of ytterbium and erbium ions has been used as luminescent agent. The multi-component inorganic glass containing tellurium oxide as well as boron, sodium, magnesium and zinc oxides has been applied as a converter matrix

Electro-spark machining of cadmium antimonide

International Nuclear Information System (INIS)

Ivanovskij, V.N.; Stepakhina, K.A.

1975-01-01

Experimental data on electrical erosion of the semiconductor material (cadmium antimonide) alloyed with tellurium are given. The potentialisies and expediency of using the electric-spark method of cutting cadmium antimonide ingots with the resistivity of 1 ohm is discussed. Cutting has been carried out in distilled water and in the air

Gallium arsenide detectors for minimum ionizing particles

International Nuclear Information System (INIS)

Beaumont, S.B.; Bertin, R.; Booth, C.N.; Buttar, C.; Capiluppi, C.; Carraresi, L.; Cindolo, F.; Colocci, M.; Combley, F.H.; D'Auria, S.; Del Papa, C.; Dogru, M.; Edwards, M.; Fiori, F.; Foster, F.; Francescato, A.; Gray, R.; Hill, G.; Hou, Y.; Houston, P.; Hughes, G.; Jones, B.K.; Lynch, J.G.; Lisowsky, B.; Matheson, J.; Nava, F.; Nuti, M.; O'Shea, V.; Pelfer, P.G.; Raine, C.; Santana, J.; Saunders, I.J.; Seller, P.H.; Shankar, K.; Sharp, P.H.; Skillicorn, I.O.; Sloan, T.; Smith, K.M.; Tartoni, N.; Ten Have, I.; Turnbull, R.M.; Vanni, U.; Vinattieri, A.; Zichichi, A.

1993-01-01

Progress on the development of GaAs solid state detectors is presented. 80% charge collection efficiency has been achieved, and double sided detectors with metal rectifying contacts have been tested. Measurements of capacitance and tests with SEM are giving more information on the behaviour of these devices. (orig.)

Development of gallium arsenide gamma spectrometric detector

International Nuclear Information System (INIS)

Kobayashi, T.; Kuru, I.

1975-03-01

GaAs semiconductor material has been considered to be a suitable material for gamma-ray spectrometer operating at room temperature since it has a wid-band gap, larger than that of silicon and germanium. The basic objective of this work is to develop a GaAs gamma-ray spectrometric detector which could be used for gamma spectrometric measurement of uranium and plutonium in nuclear fuel safeguards. Liquid phase epitaxial techniques using iron (Fe) as dopant have been developed in making high purity GaAs crystals suitable for gamma-ray spectrometer operating at room temperature. Concentration of Fe in the epitaxial crystal was controlled by initial growth temperature. The best quality epitaxial crystal was obtained under the following conditions: starting temperature is about 800degC, the proportion of Fe to Ga solvent is 1 to 300. Carrier concentration of epitaxial crystals grown distributed in the ranges of 10 12 cm -3 to 10 14 cm -3 at room temperature. The thickness of the crystals ranged from 38 μm to 120 μm. Au-GaAs surface barrier detector was made of epitaxial crystal. Some of the detector were encapsulated in a can with a 50 μm Be window by welding a can to the detector holder. The detector with high energy resolution and good charge collecting characteristics was selected by alpha spectrometry at room temperature. Energy resolution of the detector for gamma-rays up to about 200 keV was very good at room temperature operation. The best energy resolutions taken with a GaAs detector were 3 keV (fwhm) and 3.8 keV for 241 Am 59.6 keV and 57 Co 122 keV, respectively, at room temperature. In order to study the applicability of the detector for nuclear safeguards, the measurements of 235 U gamma-ray spectrum have been carried out at room temperature. It was clarified that the gamma-ray spectrum of enriched U sample could be measured in high resolution with GaAs detector at room temperature, and that the content of 235 U in enriched U sources could be determined by measuring gamma-ray spectrum with GaAs detector. However, gamma-ray counting efficiency of the detector was not enough to built portable type instrument of gamma-ray spectrometer used for routine works of nuclear safeguards. In order to improve gamma-ray counting efficiency of the detector, double-epitaxial-layer detector has been studied. The preliminary results showed that the improvement of the detector gamma-ray counting efficiency was possible by using double-epitaxial-layer structure. It was also clarified that the good quality GaAs crystal was a key to obtaining a low noise, good charge collection detector

DX centers in indium aluminum arsenide heterostructures

Science.gov (United States)

Sari, Huseyin

DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model and the grand canonical ensemble (GCE) the energy levels of the DX centers relative to the conduction band edge were estimated. The optical properties of the DX centers were also investigated using a 1.0 mum thick, Si-doped bulk-like GaAlAs epitaxial layer grown by MBE on a GaAs substrate. A conductivity modulation experiment using a stripe-patterned mask has been performed at 77°K. A conductivity difference, up to 10 4 along parallel and perpendicular directions relative to the stripes, has been measured. The difference in conductivity is a result of the large PPC effect of the DX centers and clearly indicates the localized nature of these deep levels.

Selenium implantation in epitaxial gallium arsenide layers

International Nuclear Information System (INIS)

Inada, T.; Tokunaga, K.; Taka, S.; Yuge, Y.; Kohzu, H.

1981-01-01

Selenium implantation at room temperature in S-doped epitaxial GaAs layers as a means of the formation of n + layers has been investigated. Doping profiles for Se-implanted layers have been examined by a C-V technique and/or a differential Hall effect method. It has been shown that n + layers with a maximum carrier concentration of approx. equal to1.5 x 10 18 cm -3 can be formed by implantation followed by a 15 min annealing at 950 0 C. Contact resistance of ohmic electrodes is reduced by use of the Se-implanted n + layers, resulting in the improvement on GaAs FET performance. Measured minimum noise figure of the Se-implanted GaAs FETs is 0.74 dB at 4 GHz. (orig.)

The 20 and 30 GHz MMIC technology for future space communication antenna system

Science.gov (United States)

Anzic, G.; Connolly, D. J.

1984-10-01

The development of fully monolithic gallium arsenide receive and transmit modules is described. These modules are slated for phased array antenna applications in future 30/20 gigahertz communications satellite systems. Performance goals and various approaches to achieve them are discussed. The latest design and performance results of components, submodules and modules are presented.

X-ray fluorescence spectroscopic determination of heavy metals and ...

African Journals Online (AJOL)

. Antimony. < 6.1. < 6.1. 52. Te. Tellurium. < 7.1. < 7.1. 53. I. Iodine. < 7.1. < 7.1. 55. Cs. Cesium. < 8.1. < 8.1. 56. Ba. Barium. < 8.1. < 600. 57. La. Lanthanum. < 10. < 10. 58. Ce. Cerium. < 12. < 12. 80. Hg. Mercury. < 2. < 2. 81. Tl. Thallium. < 2.9.

Composites comprising biologically-synthesized nanomaterials

Science.gov (United States)

Curran, Seamus; Dias, Sampath; Blau, Werner; Wang, Jun; Oremland, Ronald S; Baesman, Shaun

2013-04-30

The present disclosure describes composite materials containing a polymer material and a nanoscale material dispersed in the polymer material. The nanoscale materials may be biologically synthesized, such as tellurium nanorods synthesized by Bacillus selenitireducens. Composite materials of the present disclosure may have optical limiting properties and find use in optical limiting devices.

The Incorporation of Lithium Alloying Metals into Carbon Matrices for Lithium Ion Battery Anodes

Science.gov (United States)

Hays, Kevin A.

An increased interest in renewable energies and alternative fuels has led to recognition of the necessity of wide scale adoption of the electric vehicle. Automotive manufacturers have striven to produce an electric vehicle that can match the range of their petroleum-fueled counterparts. However, the state-of-the-art lithium ion batteries used to power the current offerings still do not come close to the necessary energy density. The energy and power densities of the lithium ion batteries must be increased significantly if they are going to make electric vehicles a viable option. The chemistry of the lithium ion battery, based on lithium cobalt oxide cathodes and graphite anodes, is limited by the amount of lithium the cathode can provide and the anode will accept. While these materials have proven themselves in portable electronics over the past two decades, plausible higher energy alternatives do exist. The focus is of this study is on anode materials that could achieve a capacity of more than 3 times greater than that of graphite anodes. The lithium alloying anode materials investigated and reported herein include tin, arsenic, and gallium arsenide. These metals were synthesized with nanoscale dimensions, improving their electrochemical and mechanical properties. Each exhibits their own benefits and challenges, but all display opportunities for incorporation in lithium ion batteries. Tin is incorporated in multilayer graphene nanoshells by introducing small amounts of metal in the core and, separately, on the outside of these spheres. Electrolyte decomposition on the anode limits cycle life of the tin cores, however, tin vii oxides introduced outside of the multilayer graphene nanoshells have greatly improved long term battery performance. Arsenic is a lithium alloying metal that has largely been ignored by the research community to date. One of the first long term battery performance tests of arsenic is reported in this thesis. Anodes were made from nanoscale

Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

Science.gov (United States)

Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

2015-12-22

Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

Nonlinear THz spectroscopy on n-type GaAs

Energy Technology Data Exchange (ETDEWEB)

Gaal, Peter

2008-06-23

In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10{sup 16} cm{sup -3} to 10{sup 17} cm{sup -3} are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena. (orig.)

Studies on Cd1Se0.6Te0.4 Thin Films by Spectroscopic and Diffractometer Characterization

Directory of Open Access Journals (Sweden)

Cliff Orori Mosiori

2017-09-01

Full Text Available Cadmium selenide tellurium is a compound containing cadmium, tellurium and selenium elements forming a combined solid. Hall measurements suggest that it is an n-type semiconductor. Related optical studies indicate that is transparent to infra-red radiation. Structural studies clearly show that it has a wurtzite, sphalerite crystalline forms. Cadmium is a toxic heavy metal, and selenium is only toxic in large amounts or doses. By this toxicity, cadmium selenide is a known to be carcinogen to humans; however, this does not stop investigating it for optoelectronic applications. Current research has narrowed down to investigating cadmium selenide when in the form of nanoparticles. Cadmium selenide finds applications has found applications in opto-electronic devices like laser diodes, biomedical imaging, nano-sensing, high-efficiency solar cells and thin-film transistors. By chemical bath deposition, Cd1Se0.6Te0.4 thin films were grown onto glass. Tellurium was gradually introduced as an impurity and its crystalline structure and optical properties were investigated by XRD and UV-VIS spectroscopy. The main Cd1Se0.6Te0.4/glass characteristics were correlated with the conditions of growing and post-growth treatment and it was found out that films were homogeneous films with controllable thickness onto the glass substrate and suitable for n-type “sandwich” heterostructures applications. Comparison of the intensities of equivalent reflexions provided a test for the internal consistency of the measurements. Equivalent reflexions in two specimens differed on average by 1.4 % and 0.6% from the mean measured intensity, attesting to the high internal consistency of measurements from extended-face crystals. By comparison from data obtained from all samples showed their average deviation from the mean to be 0.9 %.

Comparison of charge collection in semiconductor detectors and timing resolution, using a sub-nanosecond transimpedance amplifier

International Nuclear Information System (INIS)

Rudge, A.

1995-01-01

A transimpedance amplifier, with a risetime of <600 ps and a noise of <1000 RMS electrons in a 500 MHz bandwidth, has been used for comparison of charge collection times in silicon, gallium arsenide and diamond detectors. The use of silicon detectors as trigger counters/hodoscopes is demonstrated, together with measured timing characteristics. (orig.)