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Sample records for technology atlanta ga

  1. 78 FR 68777 - Proposed Establishment of Area Navigation (RNAV) Routes; Atlanta, GA

    Science.gov (United States)

    2013-11-15

    ... Procedures in a Metroplex (OAPM) project. The proposed routes would have connectivity to the current airway... support the Atlanta OAPM project and provide routes through, around and over the Atlanta Metroplex area... (RNAV) Routes; Atlanta, GA AGENCY: Federal Aviation Administration (FAA), DOT. ACTION: Notice of...

  2. 78 FR 70895 - Proposed Establishment and Modification of Area Navigation (RNAV) Routes; Atlanta, GA

    Science.gov (United States)

    2013-11-27

    ... modify 4 Q-routes in support of the Optimization of Airspace and Procedures in a Metroplex (OAPM) project... 71 to establish 14 RNAV Q-routes and modify 4 Q-routes in support of the OAPM project. OAPM is... Area Navigation (RNAV) Routes; Atlanta, GA AGENCY: Federal Aviation Administration (FAA), DOT. ACTION...

  3. 77 FR 8255 - Constitution Road Drum Superfund Site, Atlanta, Dekalb County, GA; Notice of Settlement

    Science.gov (United States)

    2012-02-14

    ... AGENCY Constitution Road Drum Superfund Site, Atlanta, Dekalb County, GA; Notice of Settlement AGENCY... entered into a settlement for past response costs concerning the Constitution Road Drum Superfund Site... available from Ms. Paula V. Painter. Submit your comments by Site name Constitution Road Drum Superfund...

  4. 77 FR 2981 - Constitution Road Drum Superfund Site; Atlanta, Dekalb County, GA; Notice of Settlement

    Science.gov (United States)

    2012-01-20

    ... AGENCY Constitution Road Drum Superfund Site; Atlanta, Dekalb County, GA; Notice of Settlement AGENCY... Protection Agency has entered into a settlement for past response costs concerning the Constitution Road Drum... settlement are available from Ms. Paula V. Painter. Submit your comments by Site name Constitution Road...

  5. International Year of Astronomy (IYA): A Boost to Astronomy Education in Atlanta, GA

    Science.gov (United States)

    Sarrazine, Angela R.; Albin, E.

    2010-01-01

    We report on the International Year of Astronomy (IYA) activities at Fernbank Science Center in Atlanta, GA (USA). The global focus of IYA was to celebrate astronomy and its cultural / scientific contributions, which correlate with the 400th anniversary of Galileo's first look at the heavens with a small telescope. Our planetarium and observatory utilized this opportunity to increase astronomy awareness and education locally. A plethora of special events were organized including two planetarium productions about Galileo and the telescope, special displays in the exhibit hall, two astronaut lectures, a children's workshop with Galileoscopes, and even a Galileo impersonator. Such IYA-related programs increased our overall annual attendance while at the same time served to re-introduce our local audience to astronomy in a creative way.

  6. EPA Awards Environmental Education Grant to Captain Planet Foundation in Atlanta, GA

    Science.gov (United States)

    ATLANTA --- Today, the U.S. Environmental Protection Agency (EPA) announced the Captain Planet Foundation as a recipient of an Environmental Education Grant. The Atlanta-based non-profit was selected in the latest round of awards

  7. Characterization of CCN and IN activity of bacterial isolates collected in Atlanta, GA

    Science.gov (United States)

    Purdue, Sara; Waters, Samantha; Karthikeyan, Smruthi; Konstantinidis, Kostas; Nenes, Athanasios

    2016-04-01

    Characterization of CCN activity of bacteria, other than a few select types such as Pseudomonas syringae, is limited, especially when looked at in conjunction with corresponding IN activity. The link between these two points is especially important for bacteria as those that have high CCN activity are likely to form an aqueous phase required for immersion freezing. Given the high ice nucleation temperature of bacterial cells, especially in immersion mode, it is important to characterize the CCN and IN activity of many different bacterial strains. To this effect, we developed a droplet freezing assay (DFA) which consists of an aluminum cold plate, cooled by a continuous flow of an ethylene glycol-water mixture, in order to observe immersion freezing of the collected bacteria. Here, we present the initial results on the CCN and IN activities of bacterial samples we have collected in Atlanta, GA. Bacterial strains were collected and isolated from rainwater samples taken from different storms throughout the year. We then characterized the CCN activity of each strain using a DMT Continuous Flow Streamwise Thermal Gradient CCN Counter by exposing the aerosolized bacteria to supersaturations ranging from 0.05% to 0.6%. Additionally, using our new DFA, we characterized the IN activity of each bacterial strain at temperatures ranging from -20oC to 0oC. The combined CCN and IN activity gives us valuable information on how some uncharacterized bacteria contribute to warm and mixed-phase cloud formation in the atmosphere.

  8. Advancing Residential Retrofits in Atlanta

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, Roderick K [ORNL; Kim, Eyu-Jin [Southface Energy Institute; Roberts, Sydney [Southface Energy Institute; Stephenson, Robert [Southface Energy Institute

    2012-07-01

    This report will summarize the home energy improvements performed in the Atlanta, GA area. In total, nine homes were retrofitted with eight of the homes having predicted source energy savings of approximately 30% or greater based on simulated energy consumption.

  9. American Society for Clinical Pharmacology and Therapeutics (ASCPT)-111th annual meeting. 17-20 March 2010, Atlanta, GA, USA.

    Science.gov (United States)

    Veryard, Claire

    2010-05-01

    The 111th Annual Meeting of the American Society for Clinical Pharmacology and Therapeutics, held in Atlanta, included topics covering disclosures of new data in the field of pharmacokinetics and drug interactions. This conference report highlights selected presentations on pharmacokinetic studies of several investigational drugs, including evatanepag (Pfizer Inc), AEG-33773 (Aegera Therapeutics Inc), JNJ-16269110 (Johnson & Johnson Pharmaceutical Research & Development LLC), PF-3716539 (ViiV Healthcare), MK-0736 (Merck & Co Inc), a combination of Ginkgo biloba and cilostazol (Renexin SK Chemicals Co Ltd), PP-101 (Pacific Pharmaceuticals Co Ltd), ACT-178882 (Acetlion Ltd/Merck & Co Inc) and edoxaban (Daiichi Sankyo Co Ltd).

  10. Assessment of Ga2O3 technology

    Science.gov (United States)

    2016-09-15

    architecture [60]. ....................................................................... 10 Figure 5: Photograph of 4-inch diameter Ga2O3 wafer...breakdown voltages can provide orders of magnitude reduction in system size, cost and weight. Figure 4: A More-Electric Aircraft (MEA) architecture [60...Technology base is narrowly located in Japan . Mainstream technology. Czochralski • Mature technology base. • Crucible-free crystal growth

  11. Disparities in herpes simplex virus type 2 infection between black and white men who have sex with men in Atlanta, GA.

    Science.gov (United States)

    Okafor, Netochukwu; Rosenberg, Eli S; Luisi, Nicole; Sanchez, Travis; del Rio, Carlos; Sullivan, Patrick S; Kelley, Colleen F

    2015-09-01

    HIV disproportionately affects black men who have sex with men, and herpes simplex virus type 2 is known to increase acquisition of HIV. However, data on racial disparities in herpes simplex virus type 2 prevalence and risk factors are limited among men who have sex with men in the United States. InvolveMENt was a cohort study of black and white HIV-negative men who have sex with men in Atlanta, GA. Univariate and multivariate cross-sectional associations with herpes simplex virus type 2 seroprevalence were assessed among 455 HIV-negative men who have sex with men for demographic, behavioural and social determinant risk factors using logistic regression. Seroprevalence of herpes simplex virus type 2 was 23% (48/211) for black and 16% (38/244) for white men who have sex with men (p = 0.05). Education, poverty, drug/alcohol use, incarceration, circumcision, unprotected anal intercourse, and condom use were not associated with herpes simplex virus type 2. In multivariate analyses, black race for those ≤25 years, but not >25 years, and number of sexual partners were significantly associated. Young black men who have sex with men are disproportionately affected by herpes simplex virus type 2, which may contribute to disparities in HIV acquisition. An extensive assessment of risk factors did not explain this disparity in herpes simplex virus type 2 infection suggesting differences in susceptibility or partner characteristics. © The Author(s) 2014.

  12. HIV sexual transmission risks in the context of clinical care: a prospective study of behavioural correlates of HIV suppression in a community sample, Atlanta, GA, USA

    Directory of Open Access Journals (Sweden)

    Seth C Kalichman

    2015-08-01

    Full Text Available Introduction: Antiretroviral therapy (ART improves the health of people living with HIV and has the potential to reduce HIV infectiousness, thereby preventing HIV transmission. However, the success of ART for HIV prevention hinges on sustained ART adherence and avoiding sexually transmitted infections (STI. Objectives: To determine the sexual behaviours and HIV transmission risks of individuals with suppressed and unsuppressed HIV replication (i.e., viral load. Methods: Assessed HIV sexual transmission risks among individuals with clinically determined suppressed and unsuppressed HIV. Participants were 760 men and 280 women living with HIV in Atlanta, GA, USA, who completed behavioural assessments, 28-daily prospective sexual behaviour diaries, one-month prospective unannounced pill counts for ART adherence, urine screening for illicit drug use and medical record chart abstraction for HIV viral load. Results: Individuals with unsuppressed HIV demonstrated a constellation of behavioural risks for transmitting HIV to uninfected sex partners that included symptoms of STI and substance use. In addition, 15% of participants with suppressed HIV had recent STI symptoms/diagnoses, indicating significant risks for sexual infectiousness despite their HIV suppression in blood plasma. Overall, 38% of participants were at risk for elevated sexual infectiousness and just as many engaged in unprotected sexual intercourse with non-HIV-infected partners. Conclusions: Implementation strategies for using HIV treatments as HIV prevention requires enhanced behavioural interventions that extend beyond ART to address substance use and sexual health that will otherwise undermine the potential preventive impact of early ART.

  13. 36th ATLANTA EXECUTIVE SEMINAR

    Science.gov (United States)

    2011-04-04

    Advisors 11:15AM Army of the Future Brigadier General Edward P. Donnelly, Jr., USA Director, Joint & Futures Office of the Deputy Chief of...University. THE RITZ-CARLTON ATLANTA, GA Brigadier General Edward P. Donnelly, Jr., USA Director, Joint & Futures, Office of the Deputy Chief of Staff...field of human rights, working primarily on a pro bono basis. He has worked with Amnesty International USA, where he served as a member of the Board

  14. GaN on sapphire mesa technology

    Energy Technology Data Exchange (ETDEWEB)

    Herfurth, Patrick; Men, Yakiv; Kohn, Erhard [Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein Allee 45, 89081 Ulm (Germany); Roesch, Rudolph [Institute of Optoelectronics, Albert-Einstein Allee 45, 89081 Ulm (Germany); Carlin, Jean-Francois; Grandjean, Nicolas [Laboratory of Advanced Semiconductors for Photonics and Electronics, Ecole Polytechnique Federal de Lausanne, 1015 Lausanne (Switzerland)

    2012-03-15

    This contribution reports on a GaN on sapphire mesa technology for lattice matched InAlN/GaN HEMTs similar to a silicon on insulator technology. Ultrathin buffer layers between 500 nm and 100 nm have been deep mesa etched down to the substrate to avoid cross talk between devices through the buffer and provide full transparency outside the active device area (of special interest to biochemical sensor applications).The heterostructure characteristics were: N{sub S}> 1.6 x 10{sup 13} cm{sup -2}, R{sub sh}< 600 {omega}/{open_square}. 0.25 {mu}m gate length HEMT device characteristics are moderate, but essentially similar down to 200 nm buffer thickness. Devices on 100 nm buffer layer are still difficult to reproduce. I{sub on}/I{sub off} was up to 10{sup 9} and sub-threshold slopes down to 90 mV/dec (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Modeling the Effect of Onsite Wastewater Treatment Systems on Nitrate Load Using SWAT in an Urban Watershed of Metropolitan Atlanta, GA

    Science.gov (United States)

    Onsite Wastewater Treatment Systems (OWTSs) can be a source of nitrate (NO3-) contamination in both surface and ground waters as a result of failing or high density systems. In metropolitan Atlanta, more than 26% of homes are on OWTS and this percentage is expected to increase wi...

  16. High efficiency low cost GaAs/Ge cell technology

    Science.gov (United States)

    Ho, Frank

    1990-01-01

    Viewgraphs on high efficiency low cost GaAs/Ge cell technology are presented. Topics covered include: high efficiency, low cost GaAs/Ge solar cells; advantages of Ge; comparison of typical production cells for space applications; panel level comparisons; and solar cell technology trends.

  17. Robust X-band LNAs in AlGaN/GaN technology

    NARCIS (Netherlands)

    Janssen, J.P.B.; Heijningen, M. van; Visser, G.C.; Rodenburg, M.; Johnson, H.K.; Uren, M.J.; Morvan, E.; Vliet, F.E. van

    2009-01-01

    Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have been designe

  18. Effect of photocatalytic oxidation technology on GaN CMP

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jie, E-mail: jie-wang11@mails.tsinghua.edu.cn; Wang, Tongqing, E-mail: wtq@mail.tsinghua.edu.cn; Pan, Guoshun, E-mail: pangs@mail.tsinghua.edu.cn; Lu, Xinchun, E-mail: xclu@mail.tsinghua.edu.cn

    2016-01-15

    Graphical abstract: - Highlights: • Photocatalytic oxidation technology was introduced to GaN CMP for the first time and proves to be more efficient than before. • XPS analysis reveals the planarization process by different N-type semiconductor particles. • Analyzing the effect of pH on photocatalytic oxidation in GaN CMP. • Proposing the photocatalytic oxidation model to reveal the removal mechanism. - Abstract: GaN is so hard and so chemically inert that it is difficult to obtain a high material removal rate (MRR) in the chemical mechanical polishing (CMP) process. This paper discusses the application of photocatalytic oxidation technology in GaN planarization. Three N-type semiconductor particles (TiO{sub 2}, SnO{sub 2}, and Fe{sub 2}O{sub 3}) are used as catalysts and added to the H{sub 2}O{sub 2}–SiO{sub 2}-based slurry. By optical excitation, highly reactive photoinduced holes are produced on the surface of the particles, which can oxidize OH{sup −} and H{sub 2}O absorbed on the surface of the catalysts; therefore, more OH* will be generated. As a result, GaN MRRs in an H{sub 2}O{sub 2}–SiO{sub 2}-based polishing system combined with catalysts are improved significantly, especially when using TiO{sub 2}, the MRR of which is 122 nm/h. The X-ray photoelectron spectroscopy (XPS) analysis shows the variation trend of chemical composition on the GaN surface after polishing, revealing the planarization process. Besides, the effect of pH on photocatalytic oxidation combined with TiO{sub 2} is analyzed deeply. Furthermore, the physical model of GaN CMP combined with photocatalytic oxidation technology is proposed to describe the removal mechanism of GaN.

  19. Center for Assistive Technology & Environmental Access

    Science.gov (United States)

    ... new address and college name * The Center for Assistive Technology and Environmental Access Georgia Institute of Technology (GT) College of Design 512 Means St., Suite 300, Atlanta, GA 30332-0156 (for shipping, please use 30318) U.S.A. Phone: 404-894-4960 (v/tty) ... | Privacy Agreement

  20. Stress related aspects of GaN technology physics

    Science.gov (United States)

    Suhir, Ephraim

    2015-03-01

    Simple, easy-to-use and physically meaningful analytical models have been developed for the assessment of the combined effect of the lattice and thermal mismatch on the induced stresses in an elongated bi-material assembly, as well as on the thermal mismatch on the thermal stresses in a tri-material assembly, in which the lattice mismatched stresses are eliminated in one way or another. This could be done, e.g., by using a polished or an etched substrate. The analysis is carried out in application to Gallium Nitride (GaN)-Silicon Carbide (SiC) and GaN-diamond (C) filmsubstrate assemblies. The calculated data are obtained, assuming that no annealing or other stress reduction means is applied. The data agree reasonably well with the reported (available) in-situ measurements. The most important conclusion from the computed data is that even if a reasonably good lattice match takes place (as, e.g., in the case of a GaN film fabricated on a SiC substrate, when the mismatch strain is only about 3%) and, in addition, the temperature change (from the fabrication/growth temperature to the operation temperature) is significant (as high as 1000 °C), the thermal stresses are still considerably lower than the lattice-mismatch stresses. Although there are structural and technological means for further reduction of the lattice-mismatch stresses (e.g., by high temperature annealing or by providing one or more buffering layers, or by using patterned or porous substrates), there is still a strong incentive to eliminate completely the lattice mismatch stresses. This seems to be indeed possible, if polished or otherwise flattened (e.g., chemically etched) substrates and sputter deposited GaN film is employed. In such a case only thermal stresses remain, but even these could be reduced, if necessary, by using compliant buffering layers, including layers of variable compliance, or by introducing variable compliance into the properly engineered substrate. In any event, it is expected

  1. Air quality impacts and health-benefit valuation of a low-emission technology for rail yard locomotives in Atlanta Georgia.

    Science.gov (United States)

    Galvis, Boris; Bergin, Michael; Boylan, James; Huang, Yan; Bergin, Michelle; Russell, Armistead G

    2015-11-15

    One of the largest rail yard facilities in the Southeastern US, the Inman and Tilford yards, is located in the northwestern section of Atlanta, Georgia alongside other industries, schools, businesses, and dwellings. It is a significant source of fine particulate (PM2.5) and black carbon (BC) (Galvis, Bergin, & Russell, 2013). We calculate 2011 PM2.5 and BC emissions from the rail yards and primary industrial and on-road mobile sources in the area and determine their impact on local air quality using Gaussian dispersion modeling. We determine the change in PM2.5 and BC concentrations that could be accomplished by upgrading traditional switcher locomotives used in these rail yards to a lower emitting technology and evaluate the health benefits for comparison with upgrade costs. Emissions from the rail yards were estimated using reported fuel consumption data (GAEPD, 2012b) and emission factors previously measured in the rail yards (Galvis et al., 2013). Model evaluation against 2011 monitoring data found agreement between measured and simulated concentrations. Model outputs indicate that the line-haul and switcher activities are responsible for increments in annual average concentrations of approximately 0.5±0.03 μg/m(3) (39%) and 0.7±0.04 μg/m(3) (56%) of BC, and for 1.0±0.1 μg/m(3) (7%) and 1.6±0.2 μg/m(3) (14%) of PM2.5 at two monitoring sites located north and south of the rail yards respectively. Upgrading the switcher locomotives at the yards with a lower emitting technology in this case "mother slug" units could decrease PM2.5 and BC emissions by about 9 and 3 t/year respectively. This will lower annual average PM2.5 concentrations between 0.3±0.1 μg/m(3) and 0.6±0.1 μg/m(3) and BC concentrations between 0.1±0.02 μg/m(3) and 0.2±0.03 μg/m(3) at monitoring sites north and south of the rail yards respectively, and would facilitate PM2.5 NAAQS attainment in the area. We estimate that health benefits of approximately 20 million dollars per year

  2. A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

    Directory of Open Access Journals (Sweden)

    Bradley D. Christiansen

    2012-01-01

    Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

  3. Simulation and design of AlGaAs/InGaAs CCDs based on PHEMT technology

    OpenAIRE

    Tan, HT; Hunter, IC; Snowden, CM

    2007-01-01

    This paper describes the modeling, design and fabrication of quarter-micron double delta doped AlGaAs/InGaAs charge coupled devices whose epitaxial layers and geometry were based around the device structure of commercial pHEMTs. A quasi-two-dimensional physical model has been developed to investigate the properties of this novel 2 dimensional electron gas charge coupled device (2DEG-CCD). This physical model allows the characteristics of the InGaAs transport channel as well as the DC characte...

  4. Advances in AlGaInN laser diode technology for defence, security and sensing applications

    Science.gov (United States)

    Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Wisnieski, P.; Czernecki, R.; Targowski, G.

    2016-10-01

    Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., 380nm, to the visible 530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, free-space and underwater telecommunications and the latest quantum technologies such as optical atomic clocks and atom interferometry.

  5. AlGaInN laser diode technology and systems for defence and security applications

    Science.gov (United States)

    Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

    2015-10-01

    AlGaInN laser diodes is an emerging technology for defence and security applications such as underwater communications and sensing, atomic clocks and quantum information. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries. Ridge waveguide laser diodes are fabricated to achieve single mode operation with optical powers up to 100mW with the 400-440nm wavelength range with high reliability. Visible free-space and underwater communication at frequencies up to 2.5GHz is reported using a directly modulated 422nm GaN laser diode. Low defectivity and highly uniform GaN substrates allow arrays and bars to be fabricated. High power operation operation of AlGaInN laser bars with up to 20 emitters have been demonstrated at optical powers up to 4W in a CS package with common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space or optical fibre system integration with a very small form-factor.

  6. Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

    Directory of Open Access Journals (Sweden)

    Matteo Meneghini

    2017-01-01

    Full Text Available GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i the trapping effects specific for the p-GaN gate; (ii the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues.

  7. AlGaInN laser diode technology for defence, security and sensing applications

    Science.gov (United States)

    Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

    2014-10-01

    The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

  8. 34th Atlanta Executive Seminar

    Science.gov (United States)

    2009-04-23

    Seminar “Supporting the Warfighter in an Era of New Challenges” Atlanta, Georgia 21 - 23 April 2009 Wednesday, April 22, 2009 “A Wall Street ...60L, Blackhawk Colombia : 15 - UH-60L, Blackhawks 360 - Assorted small arms (Numerous Cases) 39 – Armored Security Vehicles 214 - NVDs Chile: Avenger...the Chain  The Good News: Sellers and Buyers Will Be Motivated to Consolidate ($USD, Millions) DoD FY06 DoD FY07 DoD FY08E DoD FY09E Procurment

  9. Improved crystalline quality of N-polar GaN epitaxial layers grown with reformed flow-rate-modulation technology

    Science.gov (United States)

    Zhang, Heng; Zhang, Xiong; Wang, Shuchang; Wang, Xiaolei; Zhao, Jianguo; Wu, Zili; Dai, Qian; Yang, Hongquan; Cui, Yiping

    2017-01-01

    A reformed flow-rate-modulation technology was developed for the metalorganic vapor phase epitaxy (MOVPE) growth of the N-polar GaN epitaxial layers. To improve the crystalline quality of the N-polar GaN epitaxial layers, a GaN nucleation layer was grown at relatively low temperature with carefully-controlled pulsed supply of Ga source and showed diverse morphology with atomic force microscope (AFM). Furthermore, the electrical and optical properties of the grown N-polar GaN epitaxial layers were investigated extensively by means of Hall effect, photoluminescence (PL), and X-ray rocking curve (XRC) measurements. The characterization results revealed that as compared with the N-polar GaN epitaxial layer grown over the conventional GaN nucleation layer which was deposited with continuous supply of both N and Ga sources, the electrical and optical properties of the N-polar GaN epitaxial layer grown with optimized supply of Ga source for the GaN nucleation layer were significantly improved.

  10. 78 FR 28940 - Environmental Impact Statement for the Atlanta to Charlotte Portion of the Southeast High Speed...

    Science.gov (United States)

    2013-05-16

    ... Southeast High Speed Rail Corridor AGENCY: Federal Rail Administration (FRA), DOT. ACTION: Notice of Intent... between Atlanta, GA and Charlotte, NC, along the Southeast High-Speed Rail Corridor (SEHSR) as designated by the USDOT. The Study is being advanced consistent with the federal High-Speed Intercity...

  11. Advanced digital modulation: Communication techniques and monolithic GaAs technology

    Science.gov (United States)

    Wilson, S. G.; Oliver, J. D., Jr.; Kot, R. C.; Richards, C. R.

    1983-01-01

    Communications theory and practice are merged with state-of-the-art technology in IC fabrication, especially monolithic GaAs technology, to examine the general feasibility of a number of advanced technology digital transmission systems. Satellite-channel models with (1) superior throughput, perhaps 2 Gbps; (2) attractive weight and cost; and (3) high RF power and spectrum efficiency are discussed. Transmission techniques possessing reasonably simple architectures capable of monolithic fabrication at high speeds were surveyed. This included a review of amplitude/phase shift keying (APSK) techniques and the continuous-phase-modulation (CPM) methods, of which MSK represents the simplest case.

  12. Steps towards a GaN nanowire based light emitting diode and its integration with Si-MOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Limbach, Friederich

    2012-06-22

    This work is concerned with the realization and investigation of a light emitting diode (LED) structure within single GaN nanowires (NWs) and its integration with Si technology. To this end first a general understanding of the GaN NW growth is given. This is followed by investigations of the influence which doping species, such as Mg and Si, have on the growth of the NWs. The experience gathered in these studies set the basis for the synthesis of nominal p-i-n and n-i-p junctions in GaN NWs. Investigations of these structures resulted in the technologically important insight, that p-type doping with Mg is achieved best if it is done in the later NW growth stage. This implies that it is beneficial for a NW LED to place the p-type segment on the NW top. Another important component of an LED is the active zone where electron-hole recombination takes place. In the case of planar GaN LEDs, this is usually achieved by alloying Ga and In to form InGaN. In order to be able to control the growth under a variety of conditions, we investigate the growth of InGaN in the form of extended segments on top of GaN NWs, as well as multi quantum wells (MQWs) in GaN NWs. All the knowledge gained during these preliminary studies is harnessed to reach the overall goal: The realization of a GaN NW LED. Such structures are fabricated, investigated and processed into working LEDs. Finally, a report on the efforts of integrating III-nitride NW LEDs and Si based metaloxide-semiconductor field effect transistor (MOSFET) technology is given. This demonstrates the feasibility of the monolithic integration of both devices on the same wafer at the same time.

  13. SEMICONDUCTOR TECHNOLOGY: GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

    Science.gov (United States)

    Zaijin, Li; Liming, Hu; Ye, Wang; Ye, Yang; Hangyu, Peng; Jinlong, Zhang; Li, Qin; Yun, Liu; Lijun, Wang

    2010-03-01

    A novel process for the wet cleaning of GaAs surface is presented. It is designed for technological simplicity and minimum damage generated within the GaAs surface. It combines GaAs cleaning with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provided. Revolving ultrasonic atomization technology is adopted in the cleaning process. At first impurity removal is achieved by organic solvents; second NH4OH:H2O2:H2O = 1:1:10 solution and HCl: H2O2:H2O = 1:1:20 solution in succession to etch a very thin GaAs layer, the goal of the step is removing metallic contaminants and forming a very thin oxidation layer on the GaAs wafer surface; NH4OH:H2O = 1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by the operation of the GaAs wafer. Characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy. Metal-contamination and surface morphology was observed by a total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the cleaned surface is without contamination or metal contamination. Also, the GaAs substrates surface is very smooth for epitaxial growth using the rotary ultrasonic atomization technology.

  14. Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Seifertová, A.; Ťapajna, M.; Šoltýs, J.; Šatka, A.; Nagy, L.; Chvála, A.; Marek, J.; Carlin, J.-F.; Grandjean, N.; Konstantinidis, G.; Kuzmík, J.

    2016-06-01

    We describe the technology and performance of integrated enhancement/depletion (E/D)-mode n++GaN/InAlN/AlN/GaN HEMTs with a self-aligned metal-oxide-semiconductor (MOS) gate structure. An identical starting epi-structure was used for both types of devices without the additional need for a contacts regrowth. The n++GaN cap layer was etched away in the gate trenches of the E-mode HEMT while it was left intact for the D-mode HEMT. The plasma etching process was shown to be highly selective between the cap and the InAlN barrier and also to polish the InAlN surface. However, different GaN etching initiation times inside and outside the mesa region were obtained. Gate contacts were isolated using a dielectric layer deposited at low temperature through an e-beam resist to retain the self-aligned approach. Feasibility of the approach for future fast GaN-based mixed-signal electronic circuits was shown by obtaining alternative HEMT threshold voltage values of +0.8 V and -2.6 V, invariant maximal output current of ˜0.35 A mm-1 despite large source-to-drain distances and by demonstrating a functional logic invertor.

  15. Playground Hazards in Atlanta Child Care Centers.

    Science.gov (United States)

    Sacks, Jeffrey J.; And Others

    1990-01-01

    Examines 71 of the 605 licensed child care centers in Atlanta for playground hazards and school accidents. Finds 684 hazards in 66 centers, including climbing equipment over 6 feet high with inadequate impact-absorbing undersurfacing that had over twice the rate of fall injuries as climbing equipment under 6 feet high. (FMW)

  16. AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

    Directory of Open Access Journals (Sweden)

    S. Taking

    2011-01-01

    Full Text Available Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3 as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1 Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2 mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

  17. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core......, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 20 GHz with excellent amplitude and phase linearity. The predicted conversion gain is around 10 d...

  18. GaAs (AlGaAs)/CuInSe2 tandem solar cells. Technology status and future directions

    Science.gov (United States)

    Kim, N. P.; Burgess, R. M.; Gale, R. P.; Mcclelland, R. W.

    1991-01-01

    Mechanically stacked, high efficiency, lightweight, and radiation resistant photovoltaic cells based on a GaAs thin film top and CuInSe2 thin film bottom cells were developed, and are considered one of the most promising devices for planar solar array applications. The highest efficiency demonstrated so far using the 4 sq cm design is 23.1 pct. AM0, one sun efficiency when measured in four-terminal configuration. The current status of the GaAs(AlGaAs)/CuInSe2 tandem cell program is presented and future directions that will lead to cell efficiencies higher than 26 pct. Air Mass Zero (AM0). A new 8 sq cm cell design developed for a two terminal and voltage matched configuration to minimize wiring complexity is discussed. Optimization of the GaAs structure for a higher end-of-life performance and further improvement of tandem cells by utilizing AlGaAs as an top absorber are described. Results of environmental tests conducted with these thin film GaAs/CuInSe2 tandem cells are also summarized.

  19. Free-space and underwater GHz data transmission using AlGaInN laser diode technology

    Science.gov (United States)

    Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.

    2016-05-01

    Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications; in particular for free space laser communication. Conventional underwater communication is done acoustically with very slow data rates, short reach, and vulnurable for interception. AlGaInN blue-green laser diode technology allows the possibility of both airbourne links and underwater telecom that operate at very fast data rates (GHz), long reach (100's of metres underwater) and can also be quantum encrypted. The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Galliumnitride (GaN) blue laser diode is reported in free-space and underwater.

  20. Improved High-Energy Response of AlGaAs/GaAs Solar Cells Using a Low-Cost Technology

    Science.gov (United States)

    Noorzad, Camron D.; Zhao, Xin; Harotoonian, Vache; Woodall, Jerry M.

    2016-12-01

    We report on an AlGaAs/GaAs solar cell with a significantly increased high-energy response that was produced via a modified liquid phase epitaxy (LPE) technique. This technique uses a one-step process in which the solid-liquid equilibrium Al-Ga-As:Zn melt in contact with an n-type vendor GaAs substrate simultaneously getters impurities in the substrate that shorten minority carrier lifetimes, diffuses Zn into the substrate to create a p- n junction, and forms a thin p-AlGaAs window layer that enables more high-energy light to be efficiently absorbed. Unlike conventional LPE, this process is performed isothermally. In our "double Al" method, the ratio of Al in the melt ("Al melt ratio") that was used in our process was two times more than what was previously reported in the record 1977 International Business Machines (IBM) solar cell. Photoluminescence (PL) results showed our double Al sample yielded a response to 405 nm light ("blue light"), which was more than twice as intense as the response from our replicated IBM cell. The original 1977 cell had a low-intensity spectral response to photon wavelengths under 443 nm (Woodall and Hovel in Sol Energy Mater Sol Cells 29:176, 1990). Secondary ion mass spectrometry results confirmed the increased blue light response was due to a large reduction in AlGaAs window layer thickness. These results proved increasing the Al melt ratio broadens the spectrum of light that can be transmitted through the window layer into the active GaAs region for absorption, increasing the overall solar cell efficiency. Our enhanced double Al method can pave the way for large-scale manufacturing of low-cost, high-efficiency solar cells.

  1. Flight delay performance at Hartsfield-Jackson Atlanta International Airport

    Directory of Open Access Journals (Sweden)

    Grigoriy Yablonsky

    2014-01-01

    Full Text Available Purpose: The main objective of this paper is to determine the annual cyclical flight delays at Hartsfield-Jackson Atlanta International Airport. Then using other data such as annual precipitation, passenger and aircraft traffic volumes and other factors, we attempted to correlate these factors with overall delays. These data could assist airport management in predicting periods of flight delay.Design/methodology/approach: Data were taken and analyzed from the data base “Research and Innovation Technology Administration” (RITA for the years 2005-2011 for Hartsfield-Jackson Atlanta International Airport. The data included 2.8 million flights originating and departing from this airport. Data were also gathered from the National Oceanic and Atmospheric Administration (NOAA showing precipitation. Additional data were gathered from the FAA regarding delay causes, number and types of delays and changes to the infrastructure of ATL airportFindings: There is a repeatable annual pattern of delays at ATL that can be modeled using delay data from the Bureau of Transportation Statistics. This pattern appears to be caused primarily by the frequency and amount of precipitation that falls at ATL and by the amount of flights that arrive and depart at ATL.Originality/value: This information could assist airport operations personnel, FAA air traffic controllers and airlines in anticipating and mitigating delays at specific times of the year.

  2. 78 FR 1742 - Amendment to Class B Airspace; Atlanta, GA

    Science.gov (United States)

    2013-01-09

    ... million or more annually (adjusted for inflation with base year of 1995). This portion of the preamble... more (in 1995 dollars) in any one year by State, local, and tribal governments, in the aggregate, or by... currently uses an inflation-adjusted value of $143.1 million in lieu of $100 million. This final rule...

  3. Health and Environment Linked for Information Exchange (HELIX)-Atlanta: A CDC-NASA Joint Environmental Public Health Tracking Collaborative Project

    Science.gov (United States)

    Al-Hamdan, Mohammad; Luvall, Jeff; Crosson, Bill; Estes, Maury; Limaye, Ashutosh; Quattrochi, Dale; Rickman, Doug

    2008-01-01

    HELIX-Atlanta was developed to support current and future state and local EPHT programs to implement data linking demonstration projects which could be part of the CDC EPHT Network. HELIX-Atlanta is a pilot linking project in Atlanta for CDC to learn about the challenges the states will encounter. NASA/MSFC and the CDC are partners in linking environmental and health data to enhance public health surveillance. The use of NASA technology creates value added geospatial products from existing environmental data sources to facilitate public health linkages. Proving the feasibility of the approach is the main objective

  4. X-band 5-bit MMIC phase shifter with GaN HEMT technology

    Science.gov (United States)

    Sun, Pengpeng; Liu, Hui; Zhang, Zongjing; Geng, Miao; Zhang, Rong; Luo, Weijun

    2017-10-01

    The design approach and performance of a 5-bit digital phase shifter implemented with 0.25 μm GaN HEMT technology for X-band phased arrays are described. The switched filter and high-pass/low-pass networks are proposed in this article. For all 32 states of the 5-bit phase shifter, the RMS phase error less than 5.5°, RMS amplitude error less than 0.8 dB, insertion loss less than 12 dB and input/output return loss less than 8.5 dB are obtained overall 8-12 GHz. The continuous wave power capability is also measured, and a typical input RF P1dB data of 32 dBm is achieved at 8 GHz.

  5. AlGaN/GaN HEMT材料外延技术研究%Research on the Materials Epitaxial Technology of AlGaN/GaN HEMT

    Institute of Scientific and Technical Information of China (English)

    杨红伟; 刘英斌

    2007-01-01

    采用低压MOCVD技术在蓝宝石和SiC衬底上生长了本征GaN和AlGaN/GaN HEMT结构材料.生长过程中采用了EpiTUNE Ⅱ在位监测技术,对材料生长工艺进行了模型分析以及优化控制.在获得具有良好表面形貌、晶体质量以及光荧光谱的GaN本征材料基础上,生长了AlGaN/GaN HEMT结构材料,获得了良好的2DEG性能.

  6. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

    Directory of Open Access Journals (Sweden)

    Jenshan Lin

    2009-06-01

    Full Text Available In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs. ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO2 and C2H4 using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application.

  7. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices.

    Science.gov (United States)

    Anderson, Travis; Ren, Fan; Pearton, Stephen; Kang, Byoung Sam; Wang, Hung-Ta; Chang, Chih-Yang; Lin, Jenshan

    2009-01-01

    In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO(2) and C(2)H(4) using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application.

  8. Mechanochemical synthesis of mesoporous tin oxide: a new generation nanosorbent for (68)Ge/(68)Ga generator technology.

    Science.gov (United States)

    Chakravarty, Rubel; Chakraborty, Sudipta; Shukla, Rakesh; Bahadur, Jitendra; Ram, Ramu; Mazumder, Subhasish; Dev Sarma, Haladhar; Tyagi, Avesh Kumar; Dash, Ashutosh

    2016-09-14

    The present article reports the synthesis and characterization of mesoporous tin oxide (MTO) nanoparticles by a solid-state mechanochemical route. The synthesized material was used as an advanced sorbent material for (68)Ge/(68)Ga radionuclide generator technology. Gallium-68 (t½ = 68 min) obtained from the (68)Ge/(68)Ga generator is an important diagnostic radioisotope which holds tremendous potential in the non-invasive monitoring of various diseases, including cancer, using positron emission tomography (PET). The crystallite size of the MTO nanoparticles was in the range of 6-12 nm with a large surface area of 265 ± 16 m(2) g(-1), while the mean pore radius was found to be 2.1 ± 0.6 nm. Determination of the zeta-potential of the MTO nanoparticles dispersed in solutions at different pH values aided in understanding the sorption and separation mechanisms, which were based on the surface charge developed on the nanosorbent. The sorption capacity observed under column-flow conditions was 85 ± 5 mg Ge per g of nanosorbent. A clinical-scale (68)Ge/(68)Ga generator (740 MBq) was developed using this nanosorbent. Gallium-68 could be regularly eluted from this generator over a prolonged period of 1 year with >70% elution yield and met all the requirements for clinical use. The suitability of (68)Ga obtained from it was evaluated in preclinical settings by the preparation of a (68)Ga-labeled peptide containing the arginine-glycine-aspartic acid (RGD) motif. To the best of our knowledge, this is the first report on the synthesis of MTO nanoparticles by a mechanochemical route which could be effectively utilized for the routine preparation of clinical-scale (68)Ge/(68)Ga generators. The promising results obtained in this study would facilitate greater implementation of mechanochemistry for the synthesis of nanosorbents for radionuclide generator technology since this method is simple, economical and convenient.

  9. An Examination of Green School Practices in Atlanta Schools

    Science.gov (United States)

    Chan, Tak Cheung

    2013-01-01

    The primary goal of this study is to examine green environmental practices exercised in maintaining healthy schools in Atlanta. A forty-item researcher-developed instrument was used to survey 30 randomly sampled schools in the Atlanta area. Five schools particularly strong in green environment implementation were visited to observe their green…

  10. A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology

    Science.gov (United States)

    Jincan, Zhang; Yuming, Zhang; Hongliang, Lü; Yimen, Zhang; Bo, Liu; Leiming, Zhang; Fei, Xiang

    2015-06-01

    A fully integrated Ku-band voltage controlled oscillator (VCO) is presented in an InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve the wide tuning range (TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO consumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed. Project supported by the National Basic Research Program of China (No. 2010CBxxxx05), the Advance Research Project of China (No. 51308xxxx06), the Advance Research Foundation of China (No. 9140A08xxxx11DZ111), and Doctoral Scientific Research Foundation of Henan University of Science and Technology (No. 400613480011), and the Foundation of He'nan Educational Commettee (No. 15A510001).

  11. Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Khazanova, S. V., E-mail: khazanova@phys.unn.ru; Degtyarev, V. E.; Malekhonova, N. V.; Pavlov, D. A. [Nizhni Novgorod State University (Russian Federation); Baidus, N. V. [Nizhni Novgorod State University, Physical Technical Research Institute (Russian Federation)

    2015-01-15

    A comprehensive analysis of double tunnel-coupled InGaAs/GaAs quantum well heterostructures is carried out. The real composition profiles of the structures are obtained by high-resolution transmission electron microscopy and energy-dispersive spectrometry. The resultant profiles are compared with the profile obtained by computer simulation. By solving the Schrödinger equation in combination with the Poisson equation, the energy states for quantum-confined heterostructures with initially specified and real composition profiles are calculated. The influence of a number of factors, such as the well width, barrier thickness, and the background doping level on the properties of the heterostructure is thoroughly analyzed. In this manner, the optical characteristics and their dependence on the growth technology and geometric parameters of the structures are studied. Such an approach makes it possible to refine the real geometric parameters of wells and barriers and to correct the parameters of the structure and growth technology in order to improve the optical characteristics.

  12. 6-12 GHz Double-Balanced Image-Reject Mixer MMIC in 0.25μm AlGaN/GaN Technology

    NARCIS (Netherlands)

    Heijningen, M. van; Hoogland, J.A.; Hek, A.P. de; Vliet, F.E. van

    2015-01-01

    The front-end circuitry of transceiver modules is slowly being updated from GaAs-based monolithic microwave integrated circuits (MMICs) to Gallium-Nitride (GaN). Especially GaN power amplifiers and T/R switches, but also low-noise amplifiers (LNAs), offer significant performance improvement over GaA

  13. Demonstration of an RF front-end based on GaN HEMT technology

    Science.gov (United States)

    Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver

    2017-05-01

    The effectiveness of the developed front-end on blocking the communication link of a commercial drone vehicle has been demonstrated in this work. A jamming approach has been taken in a broadband fashion by using GaN HEMT technology. Equipped with a modulated-signal generator, a broadband power amplifier, and an omni-directional antenna, the proposed system is capable of producing jamming signals in a very wide frequency range between 0.1 - 3 GHz. The maximum RF output power of the amplifier module has been software-limited to 27 dBm (500 mW), complying to the legal spectral regulations of the 2.4 GHz ISM band. In order to test the proof of concept, a real-world scenario has been prepared in which a commercially-available quadcopter UAV is flown in a controlled environment while the jammer system has been placed in a distance of about 10 m from the drone. It has been proven that the drone of interest can be neutralized as soon as it falls within the range of coverage (˜3 m) which endorses the promising potential of the broadband jamming approach.

  14. Epitaxial lift-off technology of GaAs multijunction solar cells

    Science.gov (United States)

    Knyps, P.; Dumiszewska, E.; Kaszub, W.; Przewłoka, A.; Strupinski, W.

    2016-12-01

    Epitaxial lift-off (ELO) is a process which enables the removal of solar cell structures (one junction GaAs, two junction GaAs/InGaP or three junction GaAs/InGaAs/InGaP) from the substrate on which they are grown and their transfer onto lightweight carriers such as metal or polymeric insulator films. The said solar cells exhibit superior power conversion efficiency compared with alternative single-junction photovoltaic cell designs such as those based on crystalline Si, copper indium gallium sulfide (CIGS) or CdTe. The major advantage of ELO solar cells is the potential for wafer reuse, which can enable significant manufacturing cost reduction by minimizing the consumption of expensive wafers. Here in this work we have grown one junction GaAs solar cells on GaAs (100) substrates. A 10 nm thick AlAs layer has been used as a release layer, which has been selectively etched in HF solution. We have investigated different methods of transferring thin films onto polymer and copper foils, including the usage of temporary mounting adhesives and electro-conductive pastes. Lift-off has been demonstrated to be a very promising technique for producing affordable solar cells with a very high efficiency of up to 30%.

  15. Complejo Omni - Atlanta – (EE. UU.

    Directory of Open Access Journals (Sweden)

    Housworth, Marvin

    1976-12-01

    Full Text Available This complex of buildings, situated in the centre of Atlanta City, forms a dynamic nucleus for various social activities, such as recreational, commercial and business activities. These buildings are constructed above railway nets, due to special property rights for this lot, which constituted one of the main determinants for the characteristics of the property. The unit is made up by a luxurious hotel, two restaurants, office buildings and shopping arcades, arranged around a spacious inner yard. This patio is covered by means of an exceedingly big glass roof, supported by beams and steel framework and is provided with walls of big glazed surfaces. Thus, an intimate and friendly atmosphere is created, free from the contamination and noise of the big city whereby the square displays the typical characteristics of open squares in smaller towns.Este conjunto de edificios, emplazado en el centro de la ciudad de Atlanta, conforma un núcleo dinámico en donde se encuentran diversas actividades de tipo social: recreativas, comerciales y empresariales. Se ha construido sobre ruedas ferroviarias, en virtud de derechos especiales de propiedad que conservaba la parcela, lo que constituyó uno de los principales condicionamientos de fas características del proyecto. El complejo dispone de un hotel de lujo, dos restaurantes, edificios de oficinas y galerías comerciales, dispuestos en torno a un amplio espacio interior, cerrado por una enorme cubierta acristalada, apoyada en vigas y entramados metálicos, y por grandes ventanales corridos entre bloques. Conforma así un ambiente íntimo y acogedor, liberado del ruido y de la atmósfera turbulenta de la gran ciudad, con características propias de las pequeñas plazas populares.

  16. 6-12 GHz Double-Balanced Image-Reject Mixer MMIC in 0.25μm AlGaN/GaN Technology

    NARCIS (Netherlands)

    Heijningen, M. van; Hoogland, J.A.; Hek, A.P. de; Vliet, F.E. van

    2014-01-01

    The front-end circuitry of transceiver modules is slowly being updated from GaAs-based MMICs to Gallium-Nitride. Especially GaN power amplifiers and TR switches, but also low-noise amplifiers, offer significant performance improvement over GaAs components. Therefore it is interesting to also explore

  17. 300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology

    Science.gov (United States)

    Widiez, Julie; Sollier, Sébastien; Baron, Thierry; Martin, Mickaël; Gaudin, Gweltaz; Mazen, Frédéric; Madeira, Florence; Favier, Sylvie; Salaun, Amélie; Alcotte, Reynald; Beche, Elodie; Grampeix, Helen; Veytizou, Christelle; Moulet, Jean-Sébastien

    2016-04-01

    This paper reports the first demonstration of 300 mm In0.53Ga0.47As-on-insulator (InGaAs-OI) substrates. The use of direct wafer bonding and the Smart Cut™ technology lead to the transfer of high quality InGaAs layer on large Si wafer size (300 mm) at low effective cost, taking into account the reclaim of the III-V on Si donor substrate. The optimization of the three key building blocks of this technology is detailed. (1) The III-V epitaxial growth on 300 mm Si wafers has been optimized to decrease the defect density. (2) For the first time, hydrogen-induced thermal splitting is made inside the indium phosphide (InP) epitaxial layer and a wide implantation condition ranges is observed on the contrary to bulk InP. (3) Finally a specific direct wafer bonding with alumina oxide has been chosen to avoid outgas diffusion at the alumina oxide/III-V compound interface.

  18. Sense of Place among Atlanta Public Housing Residents

    National Research Council Canada - National Science Library

    Tester, Griff; Ruel, Erin; Anderson, Angela; Reitzes, Donald C; Oakley, Deirdre

    2011-01-01

    .... In this paper, we examine sense of place, consisting of both community and place attachment, among a sample of Atlanta public housing residents prior to relocation (N = 290). We find that 41...

  19. Plaza Central Peachtree Atlanta-(EE.UU.

    Directory of Open Access Journals (Sweden)

    Portman, John

    1976-10-01

    Full Text Available This 70-storey hotel has been constructed to meet the requirements of the city of Atlanta which needed a building with a sufficient room capacity and adequate premises for Conventions. On a structure of reinforced concrete which serves as a base and in which the common areas are situated rises a big cylindric tower, covered with coloured glass and which contains the 1.100 rooms. 230 m above ground level, the construction is crowned with a roof top cocktail lounge and a revolving restaurant with a splendid view of the city. Among the most noteworthy characteristics of this hotel is the elegantly decorated entrance hall —atrium shaped and 7 storeys high— with a pond in the centre. Further premises worth mentioning in view of their design and dimensions are the great ball room, coffee-shops and luxurious restaurants, one of which is planned in different levels and in which the most impressive feature is a 30 m high waterfall.Este edificio de setenta plantas se construyó para responder a las necesidades hoteleras de la ciudad de Atlanta, que precisaba de una instalación con suficiente capacidad de habitaciones y preparación para albergar Convenciones. Sobre una estructura de hormigón armado, que sirve de base y en la que se sitúan las zonas comunes, se eleva una gran torre cilíndrica, recubierta de vidrio coloreado reflectante, destinada a distribuir las 1.100 habitaciones con las que cuenta el edificio. La construcción se corona, a 230 m de la cimentación, con una sala para cócteles y un restaurante giratorio desde el que se domina una espléndida vista del contorno. El edificio dispone de importantes servicios comunes, entre los que cabe destacar el hall de entrada —a modo de atrio y con una altura equivalente a siete plantas—, que está dotado de un gran estanque y variados elementos de gran efecto decorativo. Otros servicios notables por su diseño y dimensiones son la gran sala de baile, y las cafeterías, comedores y

  20. Development of chip shrink technology for lateral-type GaN based HFETs using SiO2/polyimide dual IMD layers

    Science.gov (United States)

    Oh, Seung kyu; Ko, Hwa-Young; Jang, Taehoon; Kwak, Joon Seop

    2015-03-01

    This study examined chip shrink technology for lateral-type AlGaN/GaN HFETs on 150 mm Si substrates fabricated with a bonding pad above the active area (BPAA) structure. The SiO2/polyimide layers were used as inter metal dielectric (IMD) layers, which yielded a very low leakage current of 0.58 nA/mm2 even at 1 kV and a good adhesion property after O2 plasma treatment. The fabricated AlGaN/GaN HFETs with the BPAA structure exhibited good device characteristics, such as a low leakage current of 7.1 nA at 1 kV and a drain current of 3.6 A at 2 V, which has the same value compared to that of the AlGaN/GaN HFETs without the BPAA structure, even though the BPAA structure reduced the size of chip by 40%. This suggests that the BPAA structure is a promising method for reducing the size and cost of the lateral-type AlGaN/GaN HFETs. [Figure not available: see fulltext.

  1. GaAs Industry in Europe-Technologies, Trends and New Developments

    Science.gov (United States)

    Jung, Helmut; Blanck, Hervé; Bösch, Wolfgang; Mayock, Jim

    The GaAs industry has been growing immensely during recent years. This is mainly driven by the tremendous growth of the wireless communication market, which is still continuously growing. Additionally, an emerging mmW market with applications in automotive, defense and optoelectronics is further driving the demand for GaAs components. The two largest European GaAs fabrication companies, UMS and Filtronic are very well positioned to address the complete frequency range from 1GHz up to 100GHz for commercial, high volume low cost markets, as well as individual niche applications. An overview of the companies' structures, their processes and design capabilities and also their new product developments will be presented in this paper.

  2. Semi-polar GaN materials technology for high IQE green LEDs.

    Energy Technology Data Exchange (ETDEWEB)

    Koleske, Daniel; Lee, Stephen Roger; Crawford, Mary H; Coltrin, Michael Elliott; Fini, Paul

    2013-06-01

    The goal of this NETL funded program was to improve the IQE in green (and longer wavelength) nitride- based LEDs structures by using semi-polar GaN planar orientations for InGaN multiple quantum well (MQW) growth. These semi-polar orientations have the advantage of significantly reducing the piezoelectric fields that distort the QW band structure and decrease electron-hole overlap. In addition, semipolar surfaces potentially provide a more open surface bonding environment for indium incorporation, thus enabling higher indium concentrations in the InGaN MQW. The goal of the proposed work was to select the optimal semi-polar orientation and explore wafer miscuts around this orientation that produced the highest quantum efficiency LEDs. At the end of this program we had hoped to have MQWs active regions at 540 nm with an IQE of 50% and an EQE of 40%, which would be approximately twice the estimated current state-of-the-art.

  3. Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

    Science.gov (United States)

    Bessolov, V.; Kalmykov, A.; Konenkova, E.; Kukushkin, S.; Myasoedov, A.; Poletaev, N.; Rodin, S.

    2017-01-01

    Hydride vapor phase epitaxy (HVPE) growth of semipolar AlN and GaN layers on planar Si(100) substrates with SiC nanolayer is investigated. It is shown experimentally that the solid-phase epitaxial formation of a specially oriented SiC nucleation layer followed by epitaxy of AlN layer by HVPE at low rates enables growth of aluminum and gallium nitrides in the semipolar direction. For the best GaN(20-23) layers obtained, the full width at half maximum (FWHM) value for the x-ray diffraction rocking curve is 24 arcmin. The photoluminescence spectrum of the semipolar GaN measured at 4 K exhibits bands related to basal-plane and prismatic stacking faults (BSF and PSF).

  4. Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

    Science.gov (United States)

    Ive, Tommy; Berland, Kristian; Stattin, Martin; Fälth, Fredrik; Hyldgaard, Per; Larsson, Anders; Andersson, Thorvald G.

    2012-01-01

    We have used models based on the effective-mass approximation and Schrödinger-Poisson to design AlN/GaN multiple quantum well structures for intersubband transitions between two or three energy levels. The structures were realized by molecular beam epitaxy and the surface morphology and structural quality were investigated. We also investigated GaN waveguides that were fabricated using standard cleanroom techniques. Our work is focused on the various challenges associated to the fabrication of quantum cascade lasers based on group III-nitrides. These challenges are discussed in the light of our results.

  5. 0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    Energy Technology Data Exchange (ETDEWEB)

    MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

    2004-06-09

    Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.

  6. Silicon as a substrate in multiwafer MOVPE GaN technology

    Science.gov (United States)

    Alam, Assadullah; Schineller, Bernd; Protzmann, Harry; Luenenbuerger, Markus; Heuken, Michael; Bremser, Michael D.; Woelk, Egbert; Dadgar, Armin; Krost, Alois

    2001-05-01

    We report results on the transferability of a blue-green electroluminescence test structure (ELT) process across different reactor geometries and substrate materials. The process was transferred from the conditions of our well-known 6 X 2 inch to the 5 X 3 inch AIX 2400 G3 geometry by simple up-scaling of the respective process parameters in accordance with numerical simulations done on the reactor setup. The five period InGaN/GaN quantum well ELT structures with an average emission wavelength on wafer of 480 nm shows a standard deviation of 1 - 2% without rim exclusion. Electroluminescence up to 560 nm were achieved in InGaN/GaN structures with high In content. With these prospects new types of seed layers for the transfer of our standard electroluminescence test structures (ELT) process to Si- substrates were investigated. The growth on different seed layers was found feasible and resulted in operational ELT structures with emission wavelengths in the range of 440 nm to 470 nm. Electrical quick test shows bright blue emission across the full Si wafer.

  7. Vertical thinking in blue light emitting diodes: GaN-on-graphene technology

    Science.gov (United States)

    Bayram, C.; Kim, J.; Cheng, C.-W.; Ott, J.; Reuter, K. B.; Bedell, S. W.; Sadana, D. K.; Park, H.; Dimitrakopoulos, C.

    2014-03-01

    In this work, we show that a 2D cleave layer (such as epitaxial graphene on SiC) can be used for precise release of GaNbased light emitting diodes (LEDs) from the LED-substrate interface. We demonstrate the thinnest GaN-based blue LED and report on the initial electrical and optical characteristics. Our LED device employs vertical architecture: promising excellent current spreading, improved heat dissipation, and high light extraction with respect to the lateral one. Compared to conventional LED layer release techniques used for forming vertical LEDs (such as laser-liftoff and chemical lift-off techniques), our process distinguishes itself with being wafer-scalable (large area devices are possible) and substrate reuse opportunity.

  8. Novel recycle technology for recovering rare metals (Ga, In) from waste light-emitting diodes.

    Science.gov (United States)

    Zhan, Lu; Xia, Fafa; Ye, Qiuyu; Xiang, Xishu; Xie, Bing

    2015-12-15

    This work develops a novel process of recycling rare metals (Ga, In) from waste light-emitting diodes using the combination of pyrolysis, physical disaggregation methods and vacuum metallurgy separation. Firstly, the pure chips containing InGaN/GaN are adopted to study the vacuum separation behavior of rare metals, which aims to provide the theoretical foundation for recycling gallium and indium from waste light-emitting diodes. In order to extract the rare-metal-rich particles from waste light-emitting diodes, pyrolysis and physical disaggregation methods (crushing, screening, grinding and secondly screening) are studied respectively, and the operating parameters are optimized. With low boiling points and high saturation vapor pressures under vacuum, gallium and indium are separated from rare-metal-rich particles by the process of evaporation and condensation. By reference to the separating parameters of pure chips, gallium and indium in waste light-emitting diodes are recycled with the recovery efficiencies of 93.48% and 95.67% under the conditions as follows: heating temperature of 1373 K, vacuum pressure of 0.01-0.1 Pa, and holding time of 60 min. There are no secondary hazardous materials generated in the whole processes. This work provides an efficient and environmentally friendly process for recycling rare metals from waste light-emitting diodes.

  9. High-performance enhancement-mode Al2O3/InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology

    Science.gov (United States)

    Zhang, Kai; Kong, Cen; Zhou, Jianjun; Kong, Yuechan; Chen, Tangsheng

    2017-02-01

    The paper reports high-performance enhancement-mode MOS high-electron mobility transistors (MOS-HEMTs) based on a quaternary InAlGaN barrier. Self-aligned gate technology is used for gate recessing, dielectric deposition, and gate electrode formation. An improved digital recessing process is developed, and an Al2O3 gate dielectric grown with O2 plasma is used. Compared to results with AlGaN barrier, the fabricated E-mode MOS-HEMT with InAlGaN barrier delivers a record output current density of 1.7 A/mm with a threshold voltage (V TH) of 1.5 V, and a small on-resistance (R on) of 2.0 Ω·mm. Excellent V TH hysteresis and greatly improved gate leakage characteristics are also demonstrated.

  10. Cryptosporidium and Giardia in Swimming Pools, Atlanta, Georgia

    Centers for Disease Control (CDC) Podcasts

    2008-05-29

    In this podcast, Dan Rutz speaks with Dr. Joan Shields, a guest researcher with the Healthy Swimming Program at CDC, about an article in June 2008 issue of Emerging Infectious Diseases reporting on the results of a test of swimming pools in the greater Atlanta, Georgia area. Dr. Shields tested 160 pools in metro Atlanta last year for Cryptosporidium and Giardia. These germs cause most recreational water associated outbreaks.  Created: 5/29/2008 by Emerging Infectious Diseases.   Date Released: 5/29/2008.

  11. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

    Energy Technology Data Exchange (ETDEWEB)

    Hiroki, Masanobu, E-mail: hiroki.masanobu@lab.ntt.co.jp; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki [NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi 243-0198 (Japan)

    2014-11-10

    We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.

  12. Technology computer aided design for Si, SiGe and GaAs integrated circuits

    CERN Document Server

    Armstrong, GA

    2007-01-01

    The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-

  13. Microwave frequency detector at X-band using GaAs MMIC technology

    Institute of Scientific and Technical Information of China (English)

    Zhang Jun; Liao Xiaoping; Jiao Yongchang

    2009-01-01

    The design,fabrication,and experimental results of an MEMS microwave frequency detector are presented for the first time.The structure consists of a microwave power divider,two CPW transmission lines,a microwave power combiner,an MEMS capacitive power sensor and a thermopile.The detector has been designed and fabricated on GaAs substrate using the MMIC process at the X-band successfully.The MEMS capacitive power sensor is used for detecting the high power signal,while the thermopile is used for detecting the low power signal.Signals of 17 and 10 dBm are measured over the X-band.The sensitivity is 0.56 MHz/fF under 17 dBm by the capacitive power sensor,and 6.67 MHz//μV under 10 dBm by the thermopile.respectively.The validity of the presented design has been confirmed by the experiment.

  14. Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

    Directory of Open Access Journals (Sweden)

    Vittorio Camarchia

    2014-09-01

    Full Text Available This paper presents the progress of monolithic technology for microwaveapplication, focusing on gallium nitride technology advances in the realization of integratedpower amplifiers. Three design examples, developed for microwave backhaul radios, areshown. The first design is a 7 GHz Doherty developed with a research foundry, while thesecond and the third are a 7 GHz Doherty and a 7–15 GHz dual-band combined poweramplifiers, both based on a commercial foundry process. The employed architectures, themain design steps and the pros and cons of using gallium nitride technology are highlighted.The measured performance demonstrates the potentialities of the employed technology, andthe progress in the accuracy, reliability and performance of the process.

  15. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    Science.gov (United States)

    Dinetta, L. C.; Hannon, M. H.

    1995-01-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

  16. Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

    Science.gov (United States)

    Seoane, N.; Aldegunde, M.; Nagy, D.; Elmessary, M. A.; Indalecio, G.; García-Loureiro, A. J.; Kalna, K.

    2016-07-01

    We investigate the performance and scalability of III-V-OI In0.53Ga0.47As and SOI Si FinFETs using state-of-the-art in-house-built 3D simulation tools. Three different technology nodes specified in the ITRS have been analysed with gate lengths (L G) of 14.0 nm, 12.8 and 10.4 nm for the InGaAs FinFETs and 12.8 nm, 10.7 and 8.1 nm for the Si devices. At a high drain bias, the 12.8 and 10.4 nm InGaAs FinFETs deliver 15% and 13% larger on-currents but 14% larger off-currents than the equivalent 12.8 and 10.7 nm Si FinFETs, respectively. For equivalent gate lengths, both the InGaAs and the Si FinFETs have the same I ON/I OFF ratio (5.9 × 104 when L G = 12.8 nm and 5.7 × 104 when L G = 10.4(10.7) nm). A more pronounced S/D tunnelling affecting the InGaAs FinFETs leads to a larger deterioration in their SS (less than 10%) and DIBL (around 20%) compared to the Si counterparts.

  17. NEOPLASIA IN SNAKES AT ZOO ATLANTA DURING 1992-2012.

    Science.gov (United States)

    Page-Karjian, Annie; Hahne, Megan; Leach, Kate; Murphy, Hayley; Lock, Brad; Rivera, Samuel

    2017-06-01

    A retrospective study was conducted to review neoplasia of captive snakes in the Zoo Atlanta collection from 1992 to 2012. Of 255 snakes that underwent necropsy and histopathologic examination at Zoo Atlanta during the study period, 37 were observed with neoplasia at necropsy. In those 37 snakes, 42 neoplastic lesions of 18 primary cell types were diagnosed. Thirty-five of those neoplasms (83.3%) were malignant, and of those, 19 were of mesenchymal origin, whereas 14 were of epithelial origin. The median annual rate of neoplasia at necropsy was 12.5% (interquartile range = 2.8-19.5%) over the 21-yr study period. The mean estimated age at death for snakes with neoplasia was 13.2 yr (range, 1-24 yr). Investigating the incidence and clinical significance of neoplasia in captive snakes is vital for developing effective preventative and treatment regimes.

  18. Commercial mosquito trap and gravid trap oviposition media evaluation, Atlanta, Georgia.

    Science.gov (United States)

    Burkett, Douglas A; Kelly, Rosmarie; Porter, Charles H; Wirtz, Robert A

    2004-09-01

    Field trials evaluating the effectiveness of selected gravid trap oviposition media and commercially available mosquito traps were conducted in southern Fulton County (Atlanta), GA, from June 9 to June 18 and June 24 to July 4, 2002, respectively. Total number of mosquitoes and number of each species captured during the tests were compared using a Latin square design. For the gravid trap infusion media, significant differences were found for total number of mosquitoes collected where sod > or = hay > or = hay side-by-side diluted hay > dilute hay side-by-side hay > or = oak > diluted hay. Only Aedes albopictus (oak), Culex quinquefasciatus (sod and both concentrated hay infusions), and Culex restuans (sod) were captured in significantly greater numbers using a particular infusion. Significant differences for the total number of mosquitoes collected were also observed in the commercial mosquito traps such that the gravid trap > ultra violet up-draft > or = Mosquito Magnet Pro > or = omnidirectional Fay-Prince trap with CO2 > up-draft CDC-style with CO2 > or = CDC-style with CO2. Significant differences in numbers collected among traps were noted for several species, including Aedes vexans, Aedes albopictus, Cx. quinquefasciatus, Cx. restuans, and Culex salinarius. Results from these field trap and infusion evaluations can enhance current surveillance efforts, especially for the primary vectors of West Nile virus and other arboviruses.

  19. Acute pancreatitis: reflections through the history of the Atlanta Consensus

    Directory of Open Access Journals (Sweden)

    Torres López, Ana María

    2014-10-01

    Full Text Available Acute pancreatitis is an inflammatory process with systemic and local repercussions. Most cases are mild with low mortality rate, but 20% of the patients have severe pancreatitis with a mortality rate up to 30%. Through the years the medical community has tried to reach consensus about this disease in order to better understand, classify and treat it. The most important of these has been known as the Atlanta Consensus 1992, in use for many years. However, it has been recently the subject of various proposals for changes and updates, which are discussed in this review article.

  20. Why, Where, and How to Infuse the Atlanta Sociological Laboratory into the Sociology Curriculum

    Science.gov (United States)

    Wright, Earl, II

    2012-01-01

    The Atlanta Sociological Laboratory is the moniker bestowed on scholars engaged in sociological research at Atlanta University between 1895 and 1924. Under the leadership of W. E. B. Du Bois, 1897-1914, this school made substantive yet marginalized contributions to the discipline. Its accomplishments include, but are not limited to, its…

  1. 40 CFR 81.45 - Metropolitan Atlanta Intrastate Air Quality Control Region.

    Science.gov (United States)

    2010-07-01

    ... Quality Control Region. 81.45 Section 81.45 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.45 Metropolitan Atlanta Intrastate Air Quality Control Region. The Metropolitan Atlanta Intrastate Air Quality Control Region (Georgia) has been revised to consist of...

  2. Why, Where, and How to Infuse the Atlanta Sociological Laboratory into the Sociology Curriculum

    Science.gov (United States)

    Wright, Earl, II

    2012-01-01

    The Atlanta Sociological Laboratory is the moniker bestowed on scholars engaged in sociological research at Atlanta University between 1895 and 1924. Under the leadership of W. E. B. Du Bois, 1897-1914, this school made substantive yet marginalized contributions to the discipline. Its accomplishments include, but are not limited to, its…

  3. A New Definition in Atlanta: Q&A with Beverly Hall

    Science.gov (United States)

    Crow, Tracy

    2010-01-01

    Beverly Hall has been superintendent of Atlanta Public Schools since 1999. Before coming to Atlanta, Hall was state district superintendent of Newark Public Schools, deputy chancellor for instruction of New York City Public Schools, superintendent of Community School District 27 in New York City, and a principal in Brooklyn. Hall chairs Harvard…

  4. Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

    OpenAIRE

    Laurent, S.; Nallatamby, J. C.; PRIGENT, M.; Riet, M.; Nodjiadjim, V.

    2012-01-01

    This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We=700 nm). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodolog...

  5. Modeling the Effects of Onsite Wastewater Treatment Systems on Nitrate Loads Using SWAT in an Urban Watershed of Metropolitan Atlanta.

    Science.gov (United States)

    Hoghooghi, Nahal; Radcliffe, David E; Habteselassie, Mussie Y; Jeong, Jaehak

    2017-05-01

    Onsite wastewater treatment systems (OWTSs) can be a source of nitrogen (N) pollution in both surface and ground waters. In metropolitan Atlanta, GA, >26% of homes are on OWTSs. In a previous article, we used the Soil Water Assessment Tool to model the effect of OWTSs on stream flow in the Big Haynes Creek Watershed in metropolitan Atlanta. The objective of this study was to estimate the effect of OWTSs, including failing systems, on nitrate as N (NO-N) load in the same watershed. Big Haynes Creek has a drainage area of 44 km with mainly urban land use (67%), and most of the homes use OWTSs. A USGS gauge station where stream flow was measured daily and NO-N concentrations were measured monthly was used as the outlet. The model was simulated for 12 yr. Overall, the model showed satisfactory daily stream flow and NO-N loads with Nash-Sutcliffe coefficients of 0.62 and 0.58 for the calibration period and 0.67 and 0.33 for the validation period at the outlet of the Big Haynes Watershed. Onsite wastewater treatment systems caused an average increase in NO-N load of 23% at the watershed scale and 29% at the outlet of a subbasin with the highest density of OWTSs. Failing OWTSs were estimated to be 1% of the total systems and did not have a large impact on stream flow or NO-N load. The NO-N load was 74% of the total N load in the watershed, indicating the important effect of OWTSs on stream loads in this urban watershed. Copyright © by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America, Inc.

  6. Building America Case Study: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2014-09-01

    As part of the NAHB Research Center Industry Partnership, Southface partnered with TaC Studios, an Atlanta based architecture firm specializing in residential and light commercial design, on the construction of a new test home in Atlanta, GA in the mixed-humid climate. This home serves as a residence and home office for the firm's owners, as well as a demonstration of their design approach to potential and current clients. Southface believes the home demonstrates current best practices for the mixed-humid climate, including a building envelope featuring advanced air sealing details and low density spray foam insulation, glazing that exceeds ENERGY STAR requirements, and a high performance heating and cooling system. Construction quality and execution was a high priority for TaC Studios and was ensured by a third party review process. Post construction testing showed that the project met stated goals for envelope performance, an air infiltration rate of 2.15 ACH50. The homeowner's wished to further validate whole house energy savings through the project's involvement with Building America and this long-term monitoring effort. As a Building America test home, this home was evaluated to detail whole house energy use, end use loads, and the efficiency and operation of the ground source heat pump and associated systems. Given that the home includes many non-typical end use loads including a home office, pool, landscape water feature, and other luxury features not accounted for in Building America modeling tools, these end uses were separately monitored to determine their impact on overall energy consumption.

  7. American Uveitis Society Meeting October 30, 1995 Marriott Marquis Hotel, Atlanta, GA, USA.

    Science.gov (United States)

    Meisler, D M; Chern, K C

    1996-01-01

    1 Retinal vascular occlusion and scleroderma. Tessler H, Flores-Guevara J, Goldstein D, Chicago, IL, USA. 2 MHC Class II antigen expression in ciliary body in spontaneous and experimental uveitis. Kalsow C, Zhavoronkova M, Dwyer A, Rochester, NY & Scottsville, NY, USA. 3 IL-10 in the vitreous of patients with intraocular lymphoma. Whitcup S, Solomon D, Nussenblatt R, Chan C-C, Bethesda, MD, USA 4 Iris juvenile xanthogranuloma studied by immunohistochemistry. Shields J, Shields C, Eagle R, DePotter P, Collins M, Philadelphia, PA, USA. 5 Outcomes analysis in with JRA-associated uveitis. Dana M-R, Merayo-Lloves J, Foster C, Boston MA, USA. 6 Persistent glaucoma secondary to periocular steroids. Akduman L, Conway M, Burchfield J, Kolker A, Black D, DelPriore L, Kaplan H, St. Louis, MO, USA 7 The use of itraconazole in ocular histoplasmosis Callanan D, Fish G, Dallas, TX, USA 8 Succesful treatment of macular hole secondary to sympathetic ophthalmia. Cano J, Diaz M, Navea A, Ruiz C, Castilla M. Barcelona, Spain. 9 HLA-DR2+ intermediate uveitis. Pulido J, Tang W, Han D, Mieler W. Milwaukee, WI, USA. 10 Vein occlusion in AIDS misdiagnosed as CMV retinitis. Park K, Marx J, Rao N. Los Angeles, CA, USA. 11 HIV-associated foveal hemorrhage. Crews K, Zimmerman P, Lohner S. Salt Lake City, UT, USA. 12 Cytomegalovirus papillitis in patients with AIDS. Patel S, Rutzen A, Marx J, Thach A, Chong L, Rao N, Los Angeles, CA, USA. 13 Recurrence rate of CMV retinitis following the ganciclovir implant and pars plans vitrectomy and silicone oil. Marx J, Thach A, Rao N, Chong L. Los Angeles, CA, USA.

  8. 78 FR 76810 - Information Collection; Environmental Justice and the Urban Forest in Atlanta, GA

    Science.gov (United States)

    2013-12-19

    ...), Recommendation 6.4, which stresses the need to connect urban residents with community green spaces http..., partnered with others, that advocate to increase the amount of green space in cities across the country. The... federal government to find innovative ways to engage urban residents, with both public and private green...

  9. DOE ZERH Case Study: Heirloom Design Build, Euclid Avenue, Atlanta, GA

    Energy Technology Data Exchange (ETDEWEB)

    none,

    2015-09-01

    Case study of a DOE 2015 Housing Innovation Award winning custom home in the mixed-humid climate that got a HERS 50 without PV, with 2x6 16” on center walls with R-19 ocsf; basement with R-28 ccsf, R-5 rigid foam under slab; sealed attic with R-28 ocsf under roof deck; 22.8 SEER; 12.5 HSPF heat pump.

  10. GaN HEMTs

    Science.gov (United States)

    Anderson, Jonathan W.; Lee, Kyoung-Keun; Piner, Edwin L.

    2012-03-01

    Gallium nitride (GaN) has enormous potential for applications in high electron mobility transistors (HEMTs) used in RF and power devices. Intrinsic device properties such as high electron mobility, high breakdown voltage, very high current density, electron confinement in a narrow channel, and high electron velocity in the 2-dimensional electron gas of the HEMT structure are due in large part to the wide band gap of this novel semiconductor material system. This presentation discusses the properties of GaN that make it superior to other semiconductor materials, and outlines the research that will be undertaken in a new program at Texas State University to advance GaN HEMT technology. This program's aim is to further innovate the exceptional performance of GaN through improved material growth processes and epitaxial structure design.

  11. Effect of GaAs native oxide upon the surface morphology during GaAs MBE growth

    Science.gov (United States)

    Ageev, O. A.; Solodovnik, M. S.; Balakirev, S. V.; Mikhaylin, I. A.; Eremenko, M. M.

    2016-08-01

    The GaAs native oxide effect upon the surface morphology of the GaAs epitaxial layer was studied with taking into account the main growth parameters of MBE technology: substrate temperature, effective As4/Ga flux ratio and growth rate. The MBE modes of atomically smooth and rough surfaces and surfaces with Ga droplet array formation were determined. The possibility of the obtaining of GaAs nanowires via GaAs native oxide layer was shown.

  12. Outcomes among Asylum Seekers in Atlanta, Georgia, 2003--2012.

    Science.gov (United States)

    Evans, Dabney P; Donato, Caitlin E; Malewezi, Bridget A; Li, Anyie J; Corea, Mario J; Mitchell, Andrew B

    2015-10-01

    INTRODUCTION Asylum seekers face a wide array of challenges, including the need for a fair and just adjudication process. In the state of Georgia, the Atlanta Asylum Network addresses the needs of such individuals by providing them physical, psychological and gynecological assessments, the results of which are presented to the courts in the asylum appeal process. OBJECTIVE As a component of the Network's program evaluation, assess outcomes among asylum seekers using its services, as well as relation of outcomes to type of service provided, the individual's geographic origin and English language proficiency. METHODS A retrospective examination was conducted of program data gathered by the Network between 2003 and 2012. Subjects included asylum seekers who received assessments by the Network during this period. The primary variable of interest was the final case outcome, defined as determination of asylum status: granted, withholding of removal, administrative closure and prosecutorial discretion, denied or voluntary departure. Outcomes were subsequently collapsed into a single positive or negative outcome variable. Positive outcomes included asylum granted, removal withheld, administrative closure and prosecutorial discretion. Negative outcomes included asylum denied and voluntary departure. We conducted bivariate and multivariate analyses, relating final case outcomes to Network services, geographic origin and English language proficiency, among the key variables. RESULTS A total of 69 of 120 asylum seekers in the study had a known final case outcome, and of those, 63.8% (44) had a positive outcome; or 37% of the total number of asylum seekers (n = 120). Among the 20 who received 2 of the 3 types of assessment (physical, psychological, gynecological), 16 (80%) received a positive case outcome. Most persons with a known final outcome came from Africa (41), where 78% (32) of cases resulted positive. Asylum seekers not proficient in English were 2.4 times more likely

  13. Volatility and Hygroscopicity of Atlanta CCN During New Particle Formation Events in Summer 2009

    Science.gov (United States)

    Moore, R.; Scheckman, J.; Williams, B. J.; Jiang, J.; McMurry, P. H.; Zhao, J.; Smith, J. N.; Nenes, A.

    2011-12-01

    New particle formation (NPF) has the potential to substantially impact the population of cloud condensation nuclei (CCN) by both by altering their number concentrations and the hygroscopic properties. It is currently thought that while NPF proceeds via condensation of gas-phase sulfuric acid, subsequent growth must be dominated by the condensation of secondary organic species in order to reconcile field observations with theory1,2. This implies size-dependent aerosol composition with varying amounts of organic species, yet the impact of these organics on cloud droplet formation remains one of the largest sources of uncertainty in aerosol-cloud-climate interactions studies. Consequently, there is a need for in-situ, size-resolved field measurements of CCN to unravel these complex effects. // // We present a comprehensive characterization of aerosol and CCN sampled in Midtown Atlanta during the August 2009 Nucleation and CCN intensive campaign (NCCN) at the Jefferson Street monitoring site. A Droplet Measurement Technologies Continuous-Flow Stream-wise Thermal-Gradient Chamber was operated in spectrometer mode using Scanning Flow CCN Analysis (SFCA)3 to provide size-resolved CCN concentrations over a variety of particle sizes (20-50 nm) and supersaturations (0.3-2%) with high temporal resolution (~30 seconds/scan). Continuous measurements of the aerosol size distribution (1-1000 nm) and chemical composition were also made. The inferred hygroscopicity increased substantially during NPF from ~0.2-0.3 (consistent with soluble secondary organic species) to ~0.6-0.8, consistent with sulfate species or organic salts. This finding is contrary to previous work suggesting less-CCN-active aerosol during NPF4. During two special experiments, a volatility tandem differential mobility analyzer (VTDMA) was coupled with the CCN instrument to examine the volatility-dependence of the CCN hygroscopicity of 40-nm particles. Heating particles in the VTDMA was observed to increase their

  14. Evaluation of streamwater quality in the Atlanta region

    Science.gov (United States)

    Peters, Norman E.; Kandell, Stephen J.; Hatcher, Kathryn J.

    1997-01-01

    A water-quality index (WQI) was developed from historical data for streams in the Atlanta region. The WQI was derived from percentile ranks of individual water-quality parameter values at each stream by normalizing the constituent ranks for values from all sites in the area for the period from 1990 to 1995. WQIs were developed primarily for nutrients and nutrient-related parameters, because data for metals, organics (pesticides and herbicides), biological conditions, and suspended sediment generally were unavailable. Average WQI of the individual parameter WQIs for sites in the region ranged from 0.26 (good quality) to 0.86 (poor quality), and increased downstream of known nutrient sources. Annual average site WQI decreased at most long-term monitoring sites from 1986 to 1995. Temporal trends, in part, reflect effects of a drought in the late 1980's and normal to higher-than-normal rainfall and runoff in the 1990's. For several sites, particularly in the northern part of the region where major development is ongoing, WQI increased dramatically from 1994 to 1995. Interannual WQI variability typically was less than spatial variability. Average annual site WQI for individual parameters correlated with annual hydrologic characteristics, particularly precipitation amount and water yield, reflecting the effect of dilution on individual water-quality parameter values.

  15. Sense of place among Atlanta public housing residents.

    Science.gov (United States)

    Tester, Griff; Ruel, Erin; Anderson, Angela; Reitzes, Donald C; Oakley, Deirdre

    2011-06-01

    For almost two decades now, cities around the country have been demolishing traditional public housing and relocating residents to subsidized private market rental housing. In this paper, we examine sense of place, consisting of both community and place attachment, among a sample of Atlanta public housing residents prior to relocation (N = 290). We find that 41% of the residents express place attachment, and a large percentage express some level of community attachment, though residents of senior public housing are far more attached than residents of family public housing. Positive neighborhood characteristics, such as collective efficacy and social support, are associated with community attachment, and social support is also associated with place attachment. Negative neighborhood characteristics, such as social disorder and fear of crime, are not consistently associated with sense of place. We argue that embodied in current public housing relocation initiatives is a real sense of loss among the residents. Policy makers may also want to consider the possibilities of drawing upon residents' sense of place as a resource for renovating and revitalizing public housing communities rather than continuing to demolish them and relocating residents to other neighborhoods.

  16. Water crisis: the metropolitan Atlanta, Georgia, regional water supply conflict

    KAUST Repository

    Missimer, Thomas M.

    2014-07-01

    Many large population centres are currently facing considerable difficulties with planning issues to secure future water supplies, as a result of water allocation and environmental issues, litigation, and political dogma. A classic case occurs in the metropolitan Atlanta area, which is a rapidly growing, large population centre that relies solely on surface water for supply. Lake Lanier currently supplies about 70% of the water demand and has been involved in a protracted legal dispute for more than two decades. Drought and environmental management of the reservoir combined to create a water shortage which nearly caused a disaster to the region in 2007 (only about 35 days of water supply was in reserve). While the region has made progress in controlling water demand by implementing a conservation plan, per capita use projections are still very high (at 511 L/day in 2035). Both non-potable reuse and indirect reuse of treated wastewater are contained in the most current water supply plan with up to 380,000 m3/day of wastewater treated using advanced wastewater treatment (nutrient removal) to be discharged into Lake Lanier. The water supply plan, however, includes no additional or new supply sources and has deleted any reference to the use of seawater desalination or other potential water sources which would provide diversification, thereby relying solely on the Coosa and Chattahoochee river reservoirs for the future. © 2014 IWA Publishing.

  17. Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Institute of Scientific and Technical Information of China (English)

    Wu Chia-Song; Liu Hsing-Chung

    2009-01-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La_2O_3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La_2O_3 thickness. The thin La_2O_3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively.La_2O_3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 ℃ because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La_2O_3 thin film was thermally stable.The DC and RF characteristics of Pt/La_2O_3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined.The measurements indicated that the transistor with the Pt/La_2O_3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La_2O_3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  18. A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

    Institute of Scientific and Technical Information of China (English)

    Su Shi; Liao Xiaoping

    2009-01-01

    This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 μV/mW, while the reflection loss is below-14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.

  19. New Horizons at Pluto: An Overview of Educational Activities / Outreach at Fernbank Science Center, Atlanta, Georgia (USA)

    Science.gov (United States)

    Albin, Edward F.; Harris, R. Scott

    2015-11-01

    We report on educational activities and associated outreach at Fernbank Science Center (Atlanta, GA) in conjunction with the July 2015 New Horizons spacecraft encounter at Pluto. On encounter day, a public lecture about the dwarf planet was presented by Georgia’s NASA Solar System ambassador to kick off the arrival of the space probe at Pluto. In the months following the flyby, we presented a program called “Exploring New Horizons” in the Science Center’s Zeiss planetarium. This program is a digital full-dome presentation about the discovery of Pluto and its subsequent exploration - including an overview of the New Horizons mission. Since NASA continues to receive data from the probe, a brief update (tribute) is included at the end of each planetarium program that features the latest imagery and data from the dwarf planet. We anticipate running the planetarium program throughout the fall semester of 2015. With Pluto visible in the early evening autumn sky, observations are possible with Center’s 0.9 m telescope, which is open for public viewing on clear Thursday and Friday nights following the planetarium program. Although Pluto is somewhat faint through the telescope's eyepiece, it is visible and clearly identified within the surrounding starfield. Intermittent post-encounter lectures ("Messages from the Outer Solar System") have been given on Friday evenings as well. Finally, due to the continued interest in Pluto, we have developed a new outreach program about dwarf planets in general, geared towards 4th - 6th students.

  20. Green roof adoption in atlanta, georgia: the effects of building characteristics and subsidies on net private, public, and social benefits.

    Science.gov (United States)

    Mullen, Jeffrey D; Lamsal, Madhur; Colson, Greg

    2013-10-01

    This research draws on and expands previous studies that have quantified the costs and benefits associated with conventional roofs versus green roofs. Using parameters from those studies to define alternative scenarios, we estimate from a private, public, and social perspective the costs and benefits of installing and maintaining an extensive green roof in Atlanta, GA. Results indicate net private benefits are a decreasing function of roof size and vary considerably across scenarios. In contrast, net public benefits are highly stable across scenarios, ranging from $32.49 to $32.90 m(-2). In addition, we evaluate two alternative subsidy regimes: (i) a general subsidy provided to every building that adopts a green roof and (ii) a targeted subsidy provided only to buildings for which net private benefits are negative but net public benefits are positive. In 6 of the 12 general subsidy scenarios the optimal public policy is not to offer a subsidy; in 5 scenarios the optimal subsidy rate is between $20 and $27 m(-2); and in 1 scenario the optimal rate is $5 m(-2). The optimal rate with a targeted subsidy is between $20 and $27 m(-2) in 11 scenarios and no subsidy is optimal in the twelfth. In most scenarios, a significant portion of net public benefits are generated by buildings for which net private benefits are positive. This suggests a policy focused on information dissemination and technical assistance may be more cost-effective than direct subsidy payments.

  1. Climatic, ecological, and socioeconomic factors associated with West Nile virus incidence in Atlanta, Georgia, U.S.A.

    Science.gov (United States)

    Lockaby, Graeme; Noori, Navideh; Morse, Wayde; Zipperer, Wayne; Kalin, Latif; Governo, Robin; Sawant, Rajesh; Ricker, Matthew

    2016-12-01

    The integrated effects of the many risk factors associated with West Nile virus (WNV) incidence are complex and not well understood. We studied an array of risk factors in and around Atlanta, GA, that have been shown to be linked with WNV in other locations. This array was comprehensive and included climate and meteorological metrics, vegetation characteristics, land use / land cover analyses, and socioeconomic factors. Data on mosquito abundance and WNV mosquito infection rates were obtained for 58 sites and covered 2009-2011, a period following the combined storm water - sewer overflow remediation in that city. Risk factors were compared to mosquito abundance and the WNV vector index (VI) using regression analyses individually and in combination. Lagged climate variables, including soil moisture and temperature, were significantly correlated (positively) with vector index as were forest patch size and percent pine composition of patches (both negatively). Socioeconomic factors that were most highly correlated (positively) with the VI included the proportion of low income households and homes built before 1960 and housing density. The model selected through stepwise regression that related risk factors to the VI included (in the order of decreasing influence) proportion of houses built before 1960, percent of pine in patches, and proportion of low income households.

  2. Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

    NARCIS (Netherlands)

    Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

    2005-01-01

    In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

  3. Youth Technology Academy

    Science.gov (United States)

    2005-01-01

    One of the most important aspects of the YTA Program is that students, working with Tri-C instructors, NASA engineers, and technicians, begin to build relationships with professionals with whom they might not normally have contact. These professionals serve as role models for students and help them to apply math, science and problem-solving skills in real time to construct a competition-ready robot, allowing them to experience the satisfaction and challenges of an engineering or technical career by working diligently to solve problems that may never have been thought possible to solve. Transcending school boundaries, YTA is available to all students who are interested and qualified but who may otherwise never get an opportunity to participate because their school does not offer a robotics program. YTA fills an educational void by offering an exciting engineering and technology experience to a greater number of students than have been able to participate in the past. Our students have been working hard and see the long-term rewards for their efforts. The YTA Team 1270 was a finalist at the 2005 FIRST Robotics Florida Regional and took home second- place honors. Mark Poljak, nominated by the students of YTA Team 1270, received the Woodie Flowers Award at the FIRST 2005 Buckeye Regional competition. This award celebrates effective communication in the art and science of engineering and design. The YTA Team was also invited, as one of fifty-four teams, to participate in this year s FIRST VEX Robotics tournament representing Cuyahoga Community College and NASA GRC (Team 26), held at the FIRST Robotics National Competition in Atlanta, GA. Because of our efforts, community colleges from around the country have taken notice and have asked us to become part of the executive board of the RoboEducators, whose mission is to bring technology training to high school students in preparation for the future workforce.

  4. The Fermentation Technology Conditions of Pilot Plant for Gibberellin A4+A7 in 5000 L Tank%赤霉素GA4+7在5000L发酵罐中的中试发酵工艺

    Institute of Scientific and Technical Information of China (English)

    张文宣; 刘义雄; 周金龙; 钟名兴; 赵南; 徐勇; 匡利

    2011-01-01

    [目的]探索赤霉素GA4+7在5000 L发酵罐中的中试发酵工艺条件.[方法]赤霉素GA4+7发酵培养基配方和发酵条件的优化筛选研究,分别在摇瓶条件下和在5000 L发酵罐中进行,采用多因素不同水平的正交试验设计.赤霉素GA4+7发酵单位的检测采用HPLC法.[结果]获得了赤霉素GA4+7发酵培养基优化配方:淀粉+葡萄糖为9.0%+1.0%、花生粉+黄豆粉为1.2%+0.6%、磷酸二氢钾和硫酸铵为0.2%和0.01%;获得了赤霉素GA4+7在5000 L发酵罐中优化的发酵条件:温度32℃、发酵通气量V(空气)∶V(发酵液)为0.4∶1、种子罐接种摇瓶种液400 mL、种子罐培养液中硫酸铵含量为0.05%、发酵罐补糖、种子罐种龄和发酵移种量分别为38 h和12%、发酵罐中添加碳酸钙量为0.2%.[结论]成功地探索到赤霉素GA4+7在5000 L发酵罐中发酵工艺条件,GA4+7在5000 L发酵罐中发酵效价达到788 mg/L,且GA4/GA7比例为1.06,GA4+7产品质量好,该工艺条件为大罐发酵生产赤霉素GA4+7奠定了较坚实的基础.%[Aims] It was to find out the fermentation technology conditions for gibberellin GA4+7 in 5000L tank. [Methods] The gibberellin GA4+7 fermentation medium formulation and optimization of fermentation conditions for screening were studied in shake flask conditions and 5 000L tank respectively based on the multi-factor different levels of orthogonal experimental design. Gibberellin GA4+7 fermentation units were detected by means of HPLC. [Results] Gibberellin GA,,, fermentation medium optimization formula obtained: starch + glucose as 9.0%+1.0%, peanut powder + soybean powder as 1.2%+0.6%, potassium dihydrogen phosphate and ammonium sulfate were 0.2% and 0.01% respectively. Optimized fermentation technology conditions for GA4+7 in 5 000 L tank obtained: fermentation temperature as 32 °C, fermentation ventilation (Vair: Vbroth) as 0.4 : 1, shake flask inoculation liquid for seed tank as 400 mL, ammonium

  5. High-Efficiency, Ka-band Solid-State Power Amplifier Utilizing GaN Technology Project

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop an efficient, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

  6. High-Efficiency, High-Temperature, Ultra-Lightweight GaP-Based Solar Cells Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The objective of this proposal is to study and demonstrate novel GaAsNP/GaP/AlGaP technology for use in extreme photovoltaic (PV) energy conversion. NASA and the...

  7. Atlanta Ranks 3rd on EPAs Energy Star Top Cities List of Most Buildings in the U.S.

    Science.gov (United States)

    ATLANTA - Today, the U.S. Environmental Protection Agency (EPA) released its seventh-annual list of the top 25 U.S. metropolitan areas with the most Energy Star certified buildings in 2014 and the city of Atlanta ranks third. EPA's Energy Star Top C

  8. Technology and First Electrical Characteristics of Complementary NPN and PNP InAlAs/InGaAs Heterojunction Bipolar Transistors

    Science.gov (United States)

    Cui, Delong; Pavlidis, Dimitris; Sawdai, Donald; Chin, Patrick; Block, Tom

    2002-02-01

    A selective molecular beam epitaxy (MBE) regrowth approach is presented and applied in the demonstration of complementary InP heterojunction bipolar transistor (HBT) technology for monolithic integration of NPN and PNP HBTs. State-of-art performance has been observed: The DC gain was 35 for both integrated NPN and PNP HBTs. fT of 79.6 GHz and fmax of 109 GHz were achieved for NPN devices while fT of 11.6 GHz and fmax of 22.6 GHz were achieved for PNP devices. Little performance degradation has been observed compared with same design NPN or PNP HBT layers grown on individual substrates. Monolithic microwave integrated circuits (MMICs) based on complementary InP HBT technology have been studied for the first time using this technology and their electrical characteristics are presented.

  9. Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

    Science.gov (United States)

    Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

    2014-01-01

    Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. PMID:26300619

  10. Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

    Science.gov (United States)

    Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

    2014-10-01

    Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.

  11. InGaAs/GaAs异质薄膜的MBE生长研究%The MBE growth research on InGaAs/GaAs heterofilms

    Institute of Scientific and Technical Information of China (English)

    罗子江; 周勋; 杨再荣; 贺业全; 何浩; 邓朝勇; 丁召

    2011-01-01

    This paper reports an experiment research which utilized of the molecular beam epitaxy technology to grow the InGaAs/GaAs film. The growth conditions was monitored through the RHEED patterns in real-time,the growth rate was measured and the composition of InGaAs film was determined by RHEED intensity oscillations,and a method was put forward to control the composition of In/Ga in InGaAs/GaAs film. According to the R HEED patterns, the surface of InGaAs film was (2 × 3) reconstructed. After growth, the sample was quenched down to room temperature then transferred into STM for scanning. A smooth,atomically flat surface of InGaAs/GaAs film was confirmed by the STM images.%利用分子束外延技术,在GaAs(001)基片上外延InGaAs/GaAs异质薄膜,通过RHEED图像演变实时监控薄膜生长状况,采用RHEED强度振荡测量薄膜生长速率,确定薄膜中In/Ga的组分比,并提出控制InGaAs薄膜中In/Ga组分比的生长方法.根据RHEED图像,指出获得的InGaAs薄膜处于(2×3)表面重构相.样品经过淬火至室温后对样品做STM扫描分析,证实样品为表面原子级平整的InGaAs/GaAs异质薄膜.

  12. Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

    Directory of Open Access Journals (Sweden)

    S. Laurent

    2012-01-01

    Full Text Available This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT submicronic technology (We=700 nm. The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm output power and a phase noise of −80 dBc/Hz at 100 KHz offset from carrier have been measured.

  13. Social Support and Social Network Ties among the Homeless in a Downtown Atlanta Park

    Science.gov (United States)

    Reitzes, Donald C.; Crimmins, Timothy J.; Yarbrough, Johanna; Parker, Josie

    2011-01-01

    This study applies a typology of social support with 3 categories of social networks to investigate social ties and their benefits for homeless people. Data were derived from a 2-year long series of participant observations of homeless or precariously housed people who came regularly to a downtown Atlanta public park. The findings are as follows:…

  14. Describing computed tomography findings in acute necrotizing pancreatitis with the Atlanta classification - an interobserver agreement study

    NARCIS (Netherlands)

    Besselink, Marc G. H.; van Santvoort, Hjalmar C.; Bollen, Thomas L.; van Leeuwen, Maarten S.; Lameris, Johan S.; van der Jagt, Eric J.; Strijk, Simon P.; Buskens, Erik; Freeny, Patrick C.; Gooszen, Hein G.

    2006-01-01

    Objectives: The 1992 Atlanta classification is a clinically based classification system that defines the severity and complications of acute pancreatitis. A study was under taken to assess the interobserver agreement of categorizing peripancreatic collections on computed tomography (CT) using the At

  15. Evaluation of an Intervention to Reduce Playground Hazards in Atlanta Child-Care Centers.

    Science.gov (United States)

    Sacks, Jeffrey J.; And Others

    1992-01-01

    Revisits 58 child care centers in Atlanta (Georgia) that had received interventions alerting directors to playground safety hazards. Comparison with 71 control centers randomly selected found averages of 9.4 hazards at intervention center playgrounds and 8.0 hazards at control centers. These results indicate the ineffectiveness of the…

  16. Underlying Factors Related to the Atlanta Cheating Scandal: An Autoethnographic Account

    Science.gov (United States)

    Beal, Emma Mumphery

    2012-01-01

    In this study I used autoethnography to analyze fifty years of African-American educational history in Georgia. The impetus for the study was the Atlanta cheating scandal, widely interpreted as a character problem for individual teachers and administrators. As a lifelong resident of Georgia, a student, a public school teacher, and a parent, it…

  17. PREFACE TO SPECIAL SECTION: SOUTHERN OXIDANTS STUDY 1999 ATLANTA SUPERSITE PROJECT (SOS3)

    Science.gov (United States)

    The Atlanta Supersites Project consisted of a one-month intensive field program to compare advanced methods for measurement of PM2.5 mass, chemical composition, including single particle composition in real-time, and aerosol precursor species. The project was the first of EPA's ...

  18. Newcastle disease B1 vaccine strain in wild rock pigeons in Atlanta, Georgia

    Science.gov (United States)

    From June to October of 2012, samples were collected from wild Rock Pigeons (Columba livia) in urban neighborhoods of Atlanta, Georgia to ascertain the prevalence of pigeon paramyxovirus serotype-1 (PPMV-1). PPMV-1 strains are a subset of avian paramyxovirus serotype-1 (APMV-1) commonly isolated fro...

  19. Counseling Psychology from Greyston to Atlanta: On the Road to Armageddon?

    Science.gov (United States)

    Sprinthall, Norman A.

    1990-01-01

    Briefly describes the model for counseling psychology developed during the Greyston Conference of 1964 and compares it with the current view from the Atlanta Conference. Suggests that the shift of counseling psychology from schools, colleges, and career development toward a medical model of clinical treatment may eliminate an independent…

  20. Continuous wet denuder measurements of atmospheric nitric and nitrous acids during the 1999 Atlanta Supersite

    NARCIS (Netherlands)

    Genfa, Z.; Slanina, J.; Boring, C.B.; Jongejan, A.C.; Purnendu, K.D.

    2003-01-01

    Two different measurement methods for atmospheric nitric and nitrous acid during the Atlanta Supersite study are described and compared. Both approaches combined wet denuder collection coupled to ion chromatographic analysis. One of these utilized a rotating wet annular denuder maintained indoor wit

  1. Meteorological detrending of primary and secondary pollutant concentrations: Method application and evaluation using long-term (2000-2012) data in Atlanta

    Science.gov (United States)

    Henneman, Lucas R. F.; Holmes, Heather A.; Mulholland, James A.; Russell, Armistead G.

    2015-10-01

    The effectiveness of air pollution regulations and controls are evaluated based on measured air pollutant concentrations. Air pollution levels, however, are highly sensitive to both emissions and meteorological fluctuations. Therefore, an assessment of the change in air pollutant levels due to emissions controls must account for these meteorological fluctuations. Two empirical methods to quantify the impact of meteorology on pollutant levels are discussed and applied to the 13-year time period between 2000 and 2012 in Atlanta, GA. The methods employ Kolmogorov-Zurbenko filters and linear regressions to detrended pollutant signals into long-term, seasonal, weekly, short-term, and white-noise components. The methods differ in how changes in weekly and holiday emissions are accounted for. Both can provide meteorological adjustments on a daily basis for future use in acute health analyses. The meteorological impact on daily signals of ozone, NOx, CO, SO2, PM2.5, and PM species are quantified. Analyses show that the substantial decreases in seasonal averages of NOx and SO2 correspond with controls implemented in the metropolitan Atlanta area. Detrending allows for the impacts of some controls to be observed with averaging times of as little as 3 months. Annual average concentrations of NOx, SO2, and CO have all fallen by at least 50% since 2000. Reductions in NOx levels, however, do not lead to uniform reductions in ozone. While average detrended summer average maximum daily average 8 h ozone (MDA8h O3) levels fell by 4% (2.2 ± 2 ppb) between 2000 and 2012, winter averages have increased by 12% (3.8 ± 1.4 ppb), providing further evidence that high ozone levels are NOx-limited and lower ozone concentrations are NOx-inhibited. High ozone days (with MDA8h O3 greater than 60 ppb) decreased both in number and in magnitude over the study period.

  2. Food group intake patterns and nutrient intake vary across low-income Hispanic and African American preschool children in Atlanta: a cross sectional study

    Directory of Open Access Journals (Sweden)

    Salvo Deborah

    2012-08-01

    Full Text Available Abstract Background The food group intake patterns of low income Hispanic and African American preschool children are not well documented. The aim of this study was to perform a food group intake analysis of low income minority preschool children and evaluate how macronutrient and micronutrient intake compares to Dietary Reference Intakes (DRI. Methods A cross sectional study design using three-day food diaries analyzed by dietary analysis software (Nutrient Database System for Research was used. Children were recruited from well-child clinics at Children’s Healthcare of Atlanta at Hughes Spalding and North Dekalb Grady Satellite Clinic, Atlanta, GA. Low-income, African American and Hispanic preschool age children (n = 291 were enrolled. A total of 105 completed and returned the 3-day food diaries. Chi-squared tests were used to assess demographic variables. The mean percentage of intake per day of specific food groups and sub-groups were obtained (servings of given food group/total daily servings. Food intake data and proportion of children meeting DRIs for macro- and micronutrients were stratified by race/ethnicity, nutritional status, and caloric intake, and were compared using t-tests. Regression models controlling for age, BMI and sex were obtained to assess the effect of total caloric intake upon the proportional intake of each studied food group. Results The mean age of African American children was 2.24 ± 1.07 years and Hispanic children 2.84 ± 1.12 years. African Americans consumed more kcal/kg/day than Hispanics (124.7 ± 51 vs. 96.9 ± 33, p  Conclusions Food group intake patterns among low-income children differ by ethnic group. There is a need for more research to guide program design and target nutritional interventions for this population.

  3. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

    Directory of Open Access Journals (Sweden)

    Chao-Wei Lin

    2012-01-01

    Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

  4. Development of a new thin film technology for PV systems: Open-system CCSVT process for production of ZnSe/CuGaSe{sub 2} hetero diodes. Final report; Entwicklung einer neuen Duennschichttechnologie fuer die Photovoltaik: CCSVT-Verfahren im offenen System zur Herstellung von ZnSe/CuGaSe{sub 2}-Heterodioden. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Lux-Steiner, M.C.; Jaeger-Waldau, A.

    2000-07-01

    A new technology for fast, large-surface deposition of high-quality semiconducting thin films for PV systems. The new technology, CSVT (close-space vapour transport), is based on a combination of VPE (vapour phase epitaxy) in open systems and CVT (chemical vapour phase transport) in closed systems. The two-source CVD experiments with two different transport gases, i.e. Cu{sub 2}Se with iodine and Ga{sub 2}Se{sub 3} with HCl, enabled controlled variation of the Cu:Ga ratio in the gaseous phase. The solar cells produced had efficiencies of more than 4%. The best solar cell produced had an efficiency of 4.8% and an open terminal voltage of 863 mV. [German] Ziel des Vorhabens war die Entwicklung einer neuen Technologie zur schnellen, grossflaechigen Abscheidung von qualitativ hochstehenden, halbleitenden Duennschichten fuer die Photovoltaik. Das Konzept des neuen Abscheideverfahrens, CSVT (close-space vapour transport) im offenen System, basiert auf einer Kombination der etablierten Methoden VPE (vapour phase epitaxy) im offenen und CVT (chemical vapour phase transport) im geschlossenen System. Die 2-Quellen-CVD-Experimente mit den zwei unterschiedlichen Transportgasen (Cu{sub 2}Se mit Iod; Ga{sub 2}Se{sub 3} mit HCl) ermoeglichten die kontrollierte Variation des Cu:Ga=Verhaeltnisses in der Gasphase. Bisher konnten so Solarzellen mit Wirkungsgraden ueber 4% hergestellt werden, wobei bei der bisher besten Solarzelle ein Wirkungsgrad von {eta}=4.8% und eine offene Klemmenspannung von V{sub oc}=863 mV erreicht wurde. (orig.)

  5. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    Energy Technology Data Exchange (ETDEWEB)

    2011-05-01

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  6. EPA Provides $2.3 Million to Two Universities in Atlanta to Protect Air Quality in a Changing Climate

    Science.gov (United States)

    ATLANTA - Today, the U.S. Environmental Protection Agency (EPA) announced $8.5 million in research funding to 12 universities to protect air quality from the current and future challenges associated with the impacts of climate change.

  7. AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

    Science.gov (United States)

    Yuliang, Huang; Lian, Zhang; Zhe, Cheng; Yun, Zhang; Yujie, Ai; Yongbing, Zhao; Hongxi, Lu; Junxi, Wang; Jinmin, Li

    2016-11-01

    We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky gate HEMTs, the SAG p-GaN gate HEMTs show more positive threshold voltage (V th) and better gate control ability. The influence of Cp2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied. With the increasing Cp2Mg from 0.16 μmol/min to 0.20 μmol/min, the V th raises from -0.67 V to -0.37 V. The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm. The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage. Project supported by the National Natural Sciences Foundation of China (Nos. 61376090, 61306008) and the National High Technology Program of China (No. 2014AA032606).

  8. Human-Environment Patterns of Metropolitan Spatial Restructuring: Atlanta, Georgia and Shanghai, PRC, 1950-2000

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    This paper compares the spatial and environmental impacts of rapid growth through the five decades in Atlanta, Georgia and Shanghai, PRC. Both metropolitan areas represent the prime demographic and economic engines of their respective regions, and exhibit some of the worst environmental degradation problems, though from significantly different sources. Atlanta epitomizes spatial patterns of sprawl arising from an unfettered topographic and economic setting. Shanghai, in a political economy transitioning from decades of centralized constraint, seeks to spread out some of the world's densest core settlement population to its inner suburbs. Remotely sensed photographic images are utilized to classify land use changes, while census figures and environmental data are integrated in a Geographic Information System to correlate shifts through time.

  9. UNDERSTANDING THE INTERNATIONAL CONSENSUS FOR ACUTE PANCREATITIS: CLASSIFICATION OF ATLANTA 2012

    Science.gov (United States)

    de SOUZA, Gleim Dias; SOUZA, Luciana Rodrigues Queiroz; CUENCA, Ronaldo Máfia; JERÔNIMO, Bárbara Stephane de Medeiros; de SOUZA, Guilherme Medeiros; VILELA, Vinícius Martins

    2016-01-01

    ABSTRACT Introduction: Contrast computed tomography and magnetic resonance imaging are widely used due to its image quality and ability to study pancreatic and peripancreatic morphology. The understanding of the various subtypes of the disease and identification of possible complications requires a familiarity with the terminology, which allows effective communication between the different members of the multidisciplinary team. Aim: Demonstrate the terminology and parameters to identify the different classifications and findings of the disease based on the international consensus for acute pancreatitis ( Atlanta Classification 2012). Methods: Search and analysis of articles in the "CAPES Portal de Periódicos with headings "acute pancreatitis" and "Atlanta Review". Results: Were selected 23 articles containing radiological descriptions, management or statistical data related to pathology. Additional statistical data were obtained from Datasus and Population Census 2010. The radiological diagnostic criterion adopted was the Radiology American College system. The "acute pancreatitis - 2012 Rating: Review Atlanta classification and definitions for international consensus" tries to eliminate inconsistency and divergence from the determination of uniformity to the radiological findings, especially the terminology related to fluid collections. More broadly as "pancreatic abscess" and "phlegmon" went into disuse and the evolution of the collection of patient fluids can be described as "acute peripancreatic collections", "acute necrotic collections", "pseudocyst" and "necrosis pancreatic walled or isolated". Conclusion: Computed tomography and magnetic resonance represent the best techniques with sequential images available for diagnosis. Standardization of the terminology is critical and should improve the management of patients with multiple professionals care, risk stratification and adequate treatment. PMID:27759788

  10. The revised Atlanta criteria 2012 altered the classiifcation, severity assessment and management of acute pancreatitis

    Institute of Scientific and Technical Information of China (English)

    Jie Huang; Hong-Ping Qu; Yun-Feng Zheng; Xu-Wei Song; Lei Li; Zhi-Wei Xu; En-Qiang Mao; Er-Zhen Chen

    2015-01-01

    BACKGROUND: The Atlanta criteria for acute pancreatitis (AP) has been revised recently. This study was to evaluate its practical value in classiifcation of AP, the severity assessment and management. METHODS: The clinical features, severity classiifcation, out-come and risk factors for mortality of 3212 AP patients who had been admitted in Ruijin Hospital from 2004 to 2011 were analyzed based on the revised Atlanta criteria (RAC) and the original Atlanta criteria (OAC). RESULTS: Compared to the OAC group, the incidence of se-vere acute pancreatitis (SAP) was decreased by approximately one half (13.9% vs 28.2%) in the RAC group. The RAC present-ed a lower sensitivity but higher speciifcity, and its predictive value for severity and poor outcome was higher than those of the OAC. The proportion of SAP diagnosis and ICU admission in the early phase in the RAC group was signiifcantly lower than that in the OAC group (P CONCLUSIONS: The RAC showed a higher predictive value for severity and poorer outcome than the OAC. However, the RAC resulted in fewer ICU admissions in the early phase due to its lower sensitivity for diagnosis of SAP. Among SAP cases, older age, high CTSI, renal and cardiovascular failure, com-plications of acute necrotic collection and walled-off necrosis were independent risk factors for mortality.

  11. The revised Atlanta criteria 2012 altered the classiifcation, severity assessment and management of acute pancreatitis

    Institute of Scientific and Technical Information of China (English)

    Jie Huang; Hong-Ping Qu; Yun-Feng Zheng; Xu-Wei Song; Lei Li; Zhi-Wei Xu; En-Qiang Mao; Er-Zhen Chen

    2016-01-01

    BACKGROUND: The Atlanta criteria for acute pancreatitis (AP) has been revised recently. This study was to evaluate its practical value in classiifcation of AP, the severity assessment and management. METHODS: The clinical features, severity classiifcation, out-come and risk factors for mortality of 3212 AP patients who had been admitted in Ruijin Hospital from 2004 to 2011 were analyzed based on the revised Atlanta criteria (RAC) and the original Atlanta criteria (OAC). RESULTS: Compared to the OAC group, the incidence of se-vere acute pancreatitis (SAP) was decreased by approximately one half (13.9% vs 28.2%) in the RAC group. The RAC present-ed a lower sensitivity but higher speciifcity, and its predictive value for severity and poor outcome was higher than those of the OAC. The proportion of SAP diagnosis and ICU admission in the early phase in the RAC group was signiifcantly lower than that in the OAC group (P CONCLUSIONS: The RAC showed a higher predictive value for severity and poorer outcome than the OAC. However, the RAC resulted in fewer ICU admissions in the early phase due to its lower sensitivity for diagnosis of SAP. Among SAP cases, older age, high CTSI, renal and cardiovascular failure, com-plications of acute necrotic collection and walled-off necrosis were independent risk factors for mortality.

  12. Commercial aircraft engine emissions characterization of in-use aircraft at Hartsfield-Jackson Atlanta International Airport.

    Science.gov (United States)

    Herndon, Scott C; Jayne, John T; Lobo, Prem; Onasch, Timothy B; Fleming, Gregg; Hagen, Donald E; Whitefield, Philip D; Miake-Lye, Richard C

    2008-03-15

    The emissions from in-use commercial aircraft engines have been analyzed for selected gas-phase species and particulate characteristics using continuous extractive sampling 1-2 min downwind from operational taxi- and runways at Hartsfield-Jackson Atlanta International Airport. Using the aircraft tail numbers, 376 plumes were associated with specific engine models. In general, for takeoff plumes, the measured NOx emission index is lower (approximately 18%) than that predicted by engine certification data corrected for ambient conditions. These results are an in-service observation of the practice of "reduced thrust takeoff". The CO emission index observed in ground idle plumes was greater (up to 100%) than predicted by engine certification data for the 7% thrust condition. Significant differences are observed in the emissions of black carbon and particle number among different engine models/technologies. The presence of a mode at approximately 65 nm (mobility diameter) associated with takeoff plumes and a smaller mode at approximately 25 nm associated with idle plumes has been observed. An anticorrelation between particle mass loading and particle number concentration is observed.

  13. Algenol in Fort Myers, Fla. Among Winners of the 20th Annual Presidential Green Chemistry Challenge Awards/Innovative technologies tackle climate change, water, and chemical issues

    Science.gov (United States)

    ATLANTA - Algenol in Fort Myers, Florida is among the winners to be recognized by the U.S. Environmental Protection Agency (EPA) for landmark green chemistry technologies developed by industrial pioneers and leading scientists that turn climate risk

  14. GaN Power Stage for Switch-mode Audio Amplification

    DEFF Research Database (Denmark)

    Ploug, Rasmus Overgaard; Knott, Arnold; Poulsen, Søren Bang

    2015-01-01

    Gallium Nitride (GaN) based power transistors are gaining more and more attention since the introduction of the enhancement mode eGaN Field Effect Transistor (FET) which makes an adaptation from Metal-Oxide Semiconductor (MOSFET) to eGaN based technology less complex than by using depletion mode Ga...

  15. Micromechanical sensors based on GaAs/AlGaAs

    OpenAIRE

    Fricke, K; Dehe, A.; SchuBler, M; Lee, W.Y.; Hartnagel, H.L.

    1994-01-01

    The combination of high temperature stable electro­nics with micromachining is a powerful means to de­velop a variety of intelligent sensors. Especially in the GaAs/AlGaAs material system all advantages fit to­gether to realize micromachined sensors with integrated high temperature electronics. The technology includes new ohmic and Schottky contacts with high stability at increased ambient temperature. A thermal sensor is pre­sented that can detect total pressure, gas type as well as gas velo...

  16. COMBATXXI, JDAFS, and LBC Integration Requirements for EASE

    Science.gov (United States)

    2015-10-06

    Enterprise Architecture Tradespace Analysis. Tech. rep. ADA603143, XD , DOD, SERC-2014-TR-043, H98230-08-D-0171. Georgia Instittute of Technology, Atlanta, GA...ADA603143, XD , DOD, SERC-2014-TR-043, H98230-08-D-0171. Georgia Instittute of Technology, Atlanta, GA, Feb. 2014, p. 21. [6] Jefferey P. Holland. Engineered

  17. Ligand "Brackets" for Ga-Ga Bond.

    Science.gov (United States)

    Fedushkin, Igor L; Skatova, Alexandra A; Dodonov, Vladimir A; Yang, Xiao-Juan; Chudakova, Valentina A; Piskunov, Alexander V; Demeshko, Serhiy; Baranov, Evgeny V

    2016-09-06

    The reactivity of digallane (dpp-Bian)Ga-Ga(dpp-Bian) (1) (dpp-Bian = 1,2-bis[(2,6-diisopropylphenyl)imino]acenaphthene) toward acenaphthenequinone (AcQ), sulfur dioxide, and azobenzene was investigated. The reaction of 1 with AcQ in 1:1 molar ratio proceeds via two-electron reduction of AcQ to give (dpp-Bian)Ga(μ2-AcQ)Ga(dpp-Bian) (2), in which diolate [AcQ](2-) acts as "bracket" for the Ga-Ga bond. The interaction of 1 with AcQ in 1:2 molar ratio proceeds with an oxidation of the both dpp-Bian ligands as well as of the Ga-Ga bond to give (dpp-Bian)Ga(μ2-AcQ)2Ga(dpp-Bian) (3). At 330 K in toluene complex 2 decomposes to give compounds 3 and 1. The reaction of complex 2 with atmospheric oxygen results in oxidation of a Ga-Ga bond and affords (dpp-Bian)Ga(μ2-AcQ)(μ2-O)Ga(dpp-Bian) (4). The reaction of digallane 1 with SO2 produces, depending on the ratio (1:2 or 1:4), dithionites (dpp-Bian)Ga(μ2-O2S-SO2)Ga(dpp-Bian) (5) and (dpp-Bian)Ga(μ2-O2S-SO2)2Ga(dpp-Bian) (6). In compound 5 the Ga-Ga bond is preserved and supported by dithionite dianionic bracket. In compound 6 the gallium centers are bridged by two dithionite ligands. Both 5 and 6 consist of dpp-Bian radical anionic ligands. Four-electron reduction of azobenzene with 1 mol equiv of digallane 1 leads to complex (dpp-Bian)Ga(μ2-NPh)2Ga(dpp-Bian) (7). Paramagnetic compounds 2-7 were characterized by electron spin resonance spectroscopy, and their molecular structures were established by single-crystal X-ray analysis. Magnetic behavior of compounds 2, 5, and 6 was investigated by superconducting quantum interference device technique in the range of 2-295 K.

  18. High kappa Dielectrics on InGaAs and GaN - Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

    Science.gov (United States)

    2011-04-20

    interface have attributed to the high device performance. In addition, compared to the state-of-the-art GaN HEMT devices, the HfO2/ GaN MOSFET...Final Report for FA2386-10-1-4058 AOARD Grant 104058 Research Title: High  dielectrics on InGaAs and GaN - Growth, interfacial structural studies...on the science and technology of III-V InGaAs and GaN metal-oxide-semiconductor (MOS) systems using high dielectrics. The new technology of high

  19. 1988 American Control Conference, 7th, Atlanta, GA, June 15-17, 1988, Proceedings. Volumes 1, 2, and 3

    Energy Technology Data Exchange (ETDEWEB)

    1988-01-01

    Various papers on control are presented. The general topics considered include: simulation and computational methods; linear systems and control; control of flexible structures; intelligent control systems; industrial control systems; computer-aided control engineering; robust adaptive control; frequency-domain methods; filtering, estimation, and tracking; optimization of discrete event systems; trajectory control of robot manipulators; digital signal processsing in process control; control of batch processes; robustness of state space models; stable factorization; aircraft and spacecraft guidance; model order reduction; computer networking of real-time control; and advances in automatic control education. Also addressed are: implementation of adaptive and self-tuning controls in machining, eigenvalue/eigenstructure assignment, robust nonlinear control of manipulators, redundant robot control, fault detection, ACES control theory and verification, decentralized control, damage-tolerant flight control systems, neural networks in control, distributed parameter and time-delay systems, and robust stabilization and control.

  20. International Symposium on the Growth of III-Nitrides (ISGN), May 18-22, 2014, Atlanta GA

    Science.gov (United States)

    2015-03-31

    many global problems. In the future, III-N solar cells, nanostructure materials, and other innovative 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND...U.S. Army Research Office P.O. Box 12211 Research Triangle Park , NC 27709-2211 Growth of III-Nitrides, epitaxial growth techniques, ternary and...part of the solution of many global problems. In the future, III-N solar cells, nanostructure materials, and other innovative devices will play a

  1. 77 FR 43806 - Foreign-Trade Zone 26-Atlanta, GA; Application for Reorganization (Expansion of Service Area...

    Science.gov (United States)

    2012-07-26

    ... the Board's regulations, Kathleen Boyce of the FTZ Staff is designated examiner to evaluate and... via www.trade.gov/ftz . For further information, contact Kathleen Boyce at Kathleen.Boyce@trade.gov...

  2. 76 FR 45771 - Foreign-Trade Zone 26-Atlanta, GA; Application for Manufacturing Authority; Makita Corporation of...

    Science.gov (United States)

    2011-08-01

    ...; gears, housings, clutches and gear shafts; radios; grips, thumb screws, knobs and handles; wrenches...; pulleys; joints; DC motors; heat sinks and spacers; coils; electrical outlets; electrical switches; switch...

  3. CIVIL ENGINEERING TECHNOLOGY CONSULTANTS' WORKSHOP, REPORT OF PROCEEDINGS (ATLANTA, MAY 17-20, 1967).

    Science.gov (United States)

    DOBROVOLNY, JERRY S.

    THIS REPORT ATTEMPTS TO SHOW ADMINISTRATORS OF JUNIOR COLLEGES, TECHNICAL INSTITUTES, AND GOVERNMENT OR INDUSTRIAL TRAINING PROGRAMS CERTAIN CRITICAL PROBLEMS IN THE TRAINING OF CIVIL ENGINEERING TECHNICIANS. THE PHILOSOPHY OF TECHNICAL EDUCATION REQUIRES ATTENTION AS DOES THE IDENTIFICATION OF STUDENTS WHO CAN BENEFIT FROM AND SUCCESSFULLY…

  4. Technology Solutions Case Study: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia

    Energy Technology Data Exchange (ETDEWEB)

    None

    2014-09-01

    This case study describes the construction of a new test home that demonstrates current best practices for the mixed-humid climate, including a high performance ground source heat pump for heating and cooling, a building envelope featuring advanced air sealing details and low-density spray foam insulation, and glazing that exceeds ENERGY STAR requirements.

  5. Weekday/Weekend differences in ambient air pollutant concentrations in atlanta and the southeastern United States.

    Science.gov (United States)

    Blanchard, Charles L; Tanenbaum, Shelley

    2006-03-01

    The authors quantified changes between mean weekday and weekend ambient concentrations of ozone (O3) precursors (volatile organic compounds [VOC], carbon monoxide [CO], nitric oxide, and oxides of nitrogen [NOx]) in Atlanta and surrounding areas to observe how weekend precursor emission levels influenced ambient O3 levels. The authors analyzed CO, nitric oxide (NO), and NO, measurements from 1998 to 2002 and speciated VOC from 1996 to 2003. They observed a strong weekend effect in the Atlanta region, with median daytime (6:00 a.m. to 3:00 p.m. Eastern Standard Time) decreases of 62%, 57%, and 31%, respectively, in the ambient levels of NO, NOx, and CO from Wednesdays to Sundays, during the ozone season (March to October). They also observed significant decreases in ambient VOC levels between Wednesdays and Sundays, with decreases of 28% for the sum of aromatic compounds and 19% for the sum of Photochemical Assessment Monitoring Stations target compounds. Despite large reductions in O3 precursor levels on weekends, day-of-week differences in O3 mixing ratios in and near Atlanta were much smaller. Averaging overall O3-season days, the 1-hr and 8-hr mean peak daily O3 maxima on Sundays were 4.5% and 2.3% lower, respectively, than their mean levels on Wednesdays (median of 14 site differences), with no sites showing statistically significant Wednesday-to-Sunday differences. When restricted to high-O3 days (highest 3 peak O3 days per day of week per site per year), the 1-hr and 8-hr Sunday O3 mixing ratios were 11% and 10% lower, respectively, than their mean peak levels on Wednesdays (median of 14 site differences), with 6 of 14 sites showing statistically significant Wednesday-to-Sunday differences. The analyses of weekday/weekend differences in O3 precursor concentrations show that different emission reductions than normally take place each weekend will be required to achieve major reductions in ambient ozone levels in the Atlanta area.

  6. U.S. Department of Energy, National Energy Technology Laboratory Solid-State Lighting Core Technologies Light Emitting Diodes on Semipolar Bulk GaN Substrate with IQE > 80% at 150 A/cm2 and 100 0C

    Energy Technology Data Exchange (ETDEWEB)

    Chakraborty, Arpan [Soraa, Inc., Fremont, CA (United States); David, Aurelien [Soraa, Inc., Fremont, CA (United States); Grundmann, Michael [Soraa, Inc., Fremont, CA (United States); Tyagi, Anurag [Soraa, Inc., Fremont, CA (United States); Craven, Michael [Soraa, Inc., Fremont, CA (United States); Hurni, Christophe [Soraa, Inc., Fremont, CA (United States); Cich, Michael [Soraa, Inc., Fremont, CA (United States)

    2015-03-31

    GaN is a crucial material for light-emitting diodes (LEDs) emitting in the violet-to-green range. Despite its good performance, it still suffers from significant technical limitations. In particular, the efficiency of GaN-based LEDs decreases at high current (“current droop”) and high temperature (“temperature droop”). This is problematic in some lighting applications, where a high-power operation is required. This program studied the use of particular substrates to improve the efficiency of GaN-based LEDs: bulk semipolar (SP) GaN substrates. These substrates possess a very high material quality, and physical properties which are distinctly different from legacy substrates currently used in the LED industry. The program focused on the development of accurate metrology to quantify the performance of GaN-based LEDs, and on improvement to LED quality and design on SP substrates. Through a thorough optimization process, we demonstrated violet LEDs with very high internal quantum efficiency, exceeding 85% at high temperature and high current. We also investigated longer-wavelength blue emitters, but found that the limited strain budget was a key limitation.

  7. Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

    Science.gov (United States)

    Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

    2016-10-01

    In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

  8. Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation

    Science.gov (United States)

    Hayashi, Kazuo; Yamaguchi, Yutaro; Oishi, Toshiyuki; Otsuka, Hiroshi; Yamanaka, Koji; Nakayama, Masatoshi; Miyamoto, Yasuyuki

    2013-04-01

    Gate leakage current mechanism in GaN high electron mobility transistors (HEMTs) has been studied using a two-dimensional thin surface barrier (TSB) model to represent two unintentional donor thin layers that exit under and outside the gate electrode due to the existence of surface defects. The donor thin layer outside the gate affects the reverse gate current at the high gate voltage above the pinch-off voltage. Higher donor concentration of thin layer outside the gate results in larger ratio of lateral to vertical components of the electric field at the gate edge. On the other hand, the electric field at the center of the gate has only the vertical electric field component. As a result, the two-dimensional effects are only important for the reverse gate current above the pinch-off voltage. We have confirmed in this paper that the simulation results provided by our model correlate very well with the experimental reverse gate current characteristics of the device for a very wide range of reverse gate voltage from 0.1 to 90 V.

  9. Atlanta ariejansseni, a new species of shelled heteropod from the Southern Subtropical Convergence Zone (Gastropoda, Pterotracheoidea)

    Science.gov (United States)

    Wall-Palmer, Deborah; Burridge, Alice K.; Peijnenburg, Katja T.C.A.

    2016-01-01

    Abstract The Atlantidae (shelled heteropods) is a family of microscopic aragonite shelled holoplanktonic gastropods with a wide biogeographical distribution in tropical, sub-tropical and temperate waters. The aragonite shell and surface ocean habitat of the atlantids makes them particularly susceptible to ocean acidification and ocean warming, and atlantids are likely to be useful indicators of these changes. However, we still lack fundamental information on their taxonomy and biogeography, which is essential for monitoring the effects of a changing ocean. Integrated morphological and molecular approaches to taxonomy have been employed to improve the assessment of species boundaries, which give a more accurate picture of species distributions. Here a new species of atlantid heteropod is described based on shell morphology, DNA barcoding of the Cytochrome Oxidase I gene, and biogeography. All specimens of Atlanta ariejansseni sp. n. were collected from the Southern Subtropical Convergence Zone of the Atlantic and Indo-Pacific oceans suggesting that this species has a very narrow latitudinal distribution (37–48°S). Atlanta ariejansseni sp. n. was found to be relatively abundant (up to 2.3 specimens per 1000 m3 water) within this narrow latitudinal range, implying that this species has adapted to the specific conditions of the Southern Subtropical Convergence Zone and has a high tolerance to the varying ocean parameters in this region. PMID:27551204

  10. Using synoptic weather types to predict visitor attendance at Atlanta and Indianapolis zoological parks

    Science.gov (United States)

    Perkins, David R.

    2016-02-01

    Defining an ideal "tourism climate" has been an often-visited research topic where explanations have evolved from global- to location-specific indices tailored to tourists' recreational behavior. Unfortunately, as indices become increasingly specific, they are less translatable across geographies because they may only apply to specific activities, locales, climates, or populations. A key need in the future development of weather and climate indices for tourism has been a translatable, meteorologically based index capturing the generalized ambient atmospheric conditions yet considering local climatology. To address this need, this paper tests the applicability of the spatial synoptic classification (SSC) as a tool to predict visitor attendance response in the tourism, recreation, and leisure (TRL) sector across different climate regimes. Daily attendance data is paired with the prevailing synoptic weather condition at Atlanta and Indianapolis zoological parks from September 2001 to June 2011, to review potential impacts ambient atmospheric conditions may have on visitor attendances. Results indicate that "dry moderate" conditions are most associated with high levels of attendance and "moist polar" synoptic conditions are most associated with low levels of attendance at both zoological parks. Comparing visitor response at these zoo locations, visitors in Indianapolis showed lower levels of tolerance to synoptic conditions which were not "ideal." Visitors in Indianapolis also displayed more aversion to "polar" synoptic regimes while visitors in Atlanta displayed more tolerance to "moist tropical" synoptic regimes. Using a comprehensive atmospheric measure such as the SSC may be a key to broadening application when assessing tourism climates across diverse geographies.

  11. Atlanta ariejansseni, a new species of shelled heteropod from the Southern Subtropical Convergence Zone (Gastropoda, Pterotracheoidea).

    Science.gov (United States)

    Wall-Palmer, Deborah; Burridge, Alice K; Peijnenburg, Katja T C A

    2016-01-01

    The Atlantidae (shelled heteropods) is a family of microscopic aragonite shelled holoplanktonic gastropods with a wide biogeographical distribution in tropical, sub-tropical and temperate waters. The aragonite shell and surface ocean habitat of the atlantids makes them particularly susceptible to ocean acidification and ocean warming, and atlantids are likely to be useful indicators of these changes. However, we still lack fundamental information on their taxonomy and biogeography, which is essential for monitoring the effects of a changing ocean. Integrated morphological and molecular approaches to taxonomy have been employed to improve the assessment of species boundaries, which give a more accurate picture of species distributions. Here a new species of atlantid heteropod is described based on shell morphology, DNA barcoding of the Cytochrome Oxidase I gene, and biogeography. All specimens of Atlanta ariejansseni sp. n. were collected from the Southern Subtropical Convergence Zone of the Atlantic and Indo-Pacific oceans suggesting that this species has a very narrow latitudinal distribution (37-48°S). Atlanta ariejansseni sp. n. was found to be relatively abundant (up to 2.3 specimens per 1000 m(3) water) within this narrow latitudinal range, implying that this species has adapted to the specific conditions of the Southern Subtropical Convergence Zone and has a high tolerance to the varying ocean parameters in this region.

  12. Ambient Air Pollution and Cardiovascular Malformations in Atlanta, Georgia, 1986–2003

    Science.gov (United States)

    Klein, Mitchel; Correa, Adolfo; Reller, Mark D.; Mahle, William T.; Riehle-Colarusso, Tiffany J.; Botto, Lorenzo D.; Flanders, W. Dana; Mulholland, James A.; Siffel, Csaba; Marcus, Michele; Tolbert, Paige E.

    2009-01-01

    Associations between ambient air pollution levels during weeks 3–7 of pregnancy and risks of cardiovascular malformations were investigated among the cohort of pregnancies reaching at least 20 weeks’ gestation that were conceived during January 1, 1986–March 12, 2003, in Atlanta, Georgia. Surveillance records obtained from the Metropolitan Atlanta Congenital Defects Program, which conducts active, population-based surveillance on this cohort, were reviewed to classify cardiovascular malformations. Ambient 8-hour maximum ozone and 24-hour average carbon monoxide, nitrogen dioxide, particulate matter with an average aerodynamic diameter of <10 μm (PM10), and sulfur dioxide measurements were obtained from centrally located stationary monitors. Temporal associations between these pollutants and daily risks of secundum atrial septal defect, aortic coarctation, hypoplastic left heart syndrome, patent ductus arteriosus, valvar pulmonary stenosis, tetralogy of Fallot, transposition of the great arteries, muscular ventricular septal defect, perimembranous ventricular septal defect, conotruncal defects, left ventricular outflow tract defect, and right ventricular outflow defect were modeled by using Poisson generalized linear models. A statistically significant association was observed between PM10 and patent ductus arteriosus (for an interquartile range increase in PM10 levels, risk ratio = 1.60, 95% confidence interval: 1.11, 2.31). Of the 60 associations examined in the primary analysis, no other significant associations were observed. PMID:19258486

  13. 77 FR 38829 - Certain Electronic Imaging Devices; Institution of Investigation

    Science.gov (United States)

    2012-06-29

    ..., Atlanta, GA 30342-7200. Huawei Technologies Co., Ltd., Bantian, Longgang District, Shenzhen, Guangdong Province 51 g 1-29, China. FutureWei Technologies, Inc. d/b/a Huawei Technologies (USA), 5700...

  14. 78 FR 54234 - Foreign-Trade Zone 26-Atlanta, Georgia, Authorization of Production Activity PBR, Inc. d/b/a...

    Science.gov (United States)

    2013-09-03

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF COMMERCE Foreign-Trade Zones Board Foreign-Trade Zone 26--Atlanta, Georgia, Authorization of Production Activity PBR, Inc. d/b/a SKAPS Industries (Polypropylene Geotextiles), Athens, Georgia On April 8,...

  15. 77 FR 46685 - In the Matter of: Steven Neal Greenoe, Currently Incarcerated at: Inmate #54450-056, USP Atlanta...

    Science.gov (United States)

    2012-08-06

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF COMMERCE Bureau of Industry and Security In the Matter of: Steven Neal Greenoe, Currently Incarcerated at: Inmate... Neal Greenoe, with last known addresses at: Currently incarcerated at: Inmate 54450-056, USP Atlanta, U...

  16. Rare Earth Doped GaN Laser Structures Using Metal Modulated Epitaxy

    Science.gov (United States)

    2015-03-30

    Doped Gallium Nitride by Plasma Assisted MBE, Ph. D. Thesis in Electrical and Computer Engineering, 2007, Georgia Institute of Technology, Atlanta...PERCENT_SUPPORTEDNAME FTE Equivalent: Total Number: ...... ...... Inventions (DD882) Scientific Progress Gallium nitride is a well-known wide bandgap III/V...Rui Wang for generously sharing his knowledge and experience in MBE, SIMS and nitride semiconductors. The discussions I was fortunate enough to have

  17. Development of GaN-based micro chemical sensor nodes

    Science.gov (United States)

    Son, Kyung-ah; Prokopuk, Nicholas; George, Thomas; Moon, Jeong S.

    2005-01-01

    Sensors based on III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.

  18. Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

    Directory of Open Access Journals (Sweden)

    Dimitra N. Papadimitriou

    2016-11-01

    Full Text Available High quality polycrystalline bilayers of aluminium doped ZnO (Al:ZnO were successively electrodeposited in the form of columnar structures preferentially oriented along the ( 10 1 ¯ 1 crystallographic direction from aqueous solution of zinc nitrate (Zn(NO32 at negative electrochemical potential of EC = (−0.8–(−1.2 V and moderate temperature of 80 °C on gallium rich (30% Ga chalcopyrite selenide Cu(In,GaSe2 (CIGS with chemically deposited ZnSe buffer (ZnSe/Cu(In,GaSe2/Mo/glass. The aluminium doped ZnO layer properties have initially been probed by deposition of Al:ZnO/i-ZnO bilayers directly on Mo/glass substrates. The band-gap energy of the Al:ZnO/i-ZnO reference layers was found to vary from 3.2 to 3.7 eV by varying the AlCl3 solute dopant concentration from 1 to 20 mM. The electrical resistivity of indium-pellet contacted highly doped Al:ZnO sheet of In/Al:ZnO/i-ZnO/Mo/glass reference samples was of the order ρ ~10−5 Ω·cm; the respective carrier concentration of the order 1022 cm−3 is commensurate with that of sputtered Al:ZnO layers. For crystal quality optimization of the bilayers by maintenance of the volatile selenium content of the chalcopyrite, they were subjected to 2-step annealing under successive temperature raise and N2 flux regulation. The hydrostatic compressive strain due to Al3+ incorporation in the ZnO lattice of bilayers processed successively with 5 and 12 mM AlCl3 dopant was εh = −0.046 and the respective stress σh = −20 GPa. The surface reflectivity of maximum 5% over the scanned region of 180–900 nm and the (optical band gap of Eg = 3.67 eV were indicative of the high optical quality of the electrochemically deposited (ECD Al:ZnO bilayers.

  19. Testing urban design and air quality relationships in the Atlanta region

    Energy Technology Data Exchange (ETDEWEB)

    Frank, L.D.; Bachman, W.; Stone, B. [City Planning Program, Georgia Institute of Technology, Atlanta (United States)

    2000-07-01

    This study presents evidence that households, located in areas of the Atlanta Region with moderately high levels of street connectivity and compactness, drive and pollute less on a daily basis. This analysis employs a rigorous methodology to assess the emissions per household on a per trip basis accounting for cold start cycles, speed, hot stabilized operation, distance, and regional fleet characteristics. Emissions per household are cross-sectionally correlated with the land use patterns at the place of residence. These findings support the argument that a 'nexus' exists between land use policies implemented through local government development regulations and household travel behavior (i.e. mode choice, travel distance, travel time, and vehicle emissions). This research provides an initial and very critical step that is required to lend credibility to the argument that major metropolitan regions should consider alternatives to current land and travel intensive development patterns to meet future air quality objectives. (authors)

  20. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    Science.gov (United States)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  1. Predictors of emergency department use in children with persistent asthma in metropolitan Atlanta, Georgia.

    Science.gov (United States)

    Franklin, Jeffery M; Grunwell, Jocelyn R; Bruce, Alice C; Smith, Robin C; Fitzpatrick, Anne M

    2017-08-01

    Racial disparities are evident among children with asthma in the United States, with non-Hispanic black children at particularly high risk for poor asthma outcomes, including frequent emergency department (ED) use for asthma exacerbations. To compare asthma features in non-Hispanic black vs white children in Atlanta, Georgia, and determine what clinical features predict future ED use for asthma. Self-reported black and white children 6 to 17 years of age with persistent asthma treated with controller medications completed medical history questionnaires, lung function testing, aeroallergen sensitization testing, and venipuncture. Medical records were reviewed for asthma-related ED visits for 12 months after the initial study visit. A total of 276 children were enrolled. Black children, compared with white children, resided in more disadvantaged zip code areas and were more likely to have public insurance. Black children also had more features of asthma severity and more ED visits during the study period. Predictors of ED use, aside from a previous ED visit, differed by race. After adjustment for socioeconomic status, predictors of ED use in white children included an ED visit in the previous year and sensitization to pets and dust; in black children, predictors included ED use in the previous year, the number of asthma controller medications, forced expiratory volume in 1 second less than 80% predicted, blood eosinophil count greater than 4%, and mold sensitization. Asthma features and ED use differ between black and white children in metropolitan Atlanta. Strategies to eliminate allergen exposure in the home and improve asthma control in these children may require tailoring for different racial groups. Copyright © 2017 American College of Allergy, Asthma & Immunology. Published by Elsevier Inc. All rights reserved.

  2. Data processing system of GA and PPPL

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Takayuki [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment

    2001-11-01

    Results of research in 1997 to General Atomics (GA) and Princeton Plasma Physics Laboratory (PPPL) are reported. The author visited the computer system of fusion group in GA. He joined the tokamak experiment in DIII-D, especially on the demonstration of the remote experiment inside U.S., and investigated the data processing system of DIII-D and the computer network, etc. After the visit to GA, He visited PPPL and exchanged the information about the equipment of remote experiment between JAERI and PPPL based on the US-Japan fusion energy research cooperation. He also investigated the data processing system of TFTR tokamak, the computer network and so on. Results of research of the second visit to GA in 2000 are also reported, which describes a rapid progress of each data processing equipment by the advance on the computer technology in just three years. (author)

  3. UNDERSTANDING THE INTERNATIONAL CONSENSUS FOR ACUTE PANCREATITIS: CLASSIFICATION OF ATLANTA 2012.

    Science.gov (United States)

    Souza, Gleim Dias de; Souza, Luciana Rodrigues Queiroz; Cuenca, Ronaldo Máfia; Jerônimo, Bárbara Stephane de Medeiros; Souza, Guilherme Medeiros de; Vilela, Vinícius Martins

    2016-01-01

    Contrast computed tomography and magnetic resonance imaging are widely used due to its image quality and ability to study pancreatic and peripancreatic morphology. The understanding of the various subtypes of the disease and identification of possible complications requires a familiarity with the terminology, which allows effective communication between the different members of the multidisciplinary team. Demonstrate the terminology and parameters to identify the different classifications and findings of the disease based on the international consensus for acute pancreatitis ( Atlanta Classification 2012). Search and analysis of articles in the "CAPES Portal de Periódicos with headings "acute pancreatitis" and "Atlanta Review". Were selected 23 articles containing radiological descriptions, management or statistical data related to pathology. Additional statistical data were obtained from Datasus and Population Census 2010. The radiological diagnostic criterion adopted was the Radiology American College system. The "acute pancreatitis - 2012 Rating: Review Atlanta classification and definitions for international consensus" tries to eliminate inconsistency and divergence from the determination of uniformity to the radiological findings, especially the terminology related to fluid collections. More broadly as "pancreatic abscess" and "phlegmon" went into disuse and the evolution of the collection of patient fluids can be described as "acute peripancreatic collections", "acute necrotic collections", "pseudocyst" and "necrosis pancreatic walled or isolated". Computed tomography and magnetic resonance represent the best techniques with sequential images available for diagnosis. Standardization of the terminology is critical and should improve the management of patients with multiple professionals care, risk stratification and adequate treatment. A tomografia computadorizada contrastada e a ressonância magnética são exames amplamente utilizados no estudo da

  4. GaAs/AlGaAs heterostructure point-contact concentrator cells

    Science.gov (United States)

    Gale, R. P.; Zavracky, P. M.; Mcclelland, R. W.; Fan, John C. C.

    1987-01-01

    Point-contact cells fabricated in silicon have recently achieved very high efficiencies. Applying this structure to GaAs is difficult as it requires both surface passivation of the GaAs and a film of GaAs with thickness less than 10 microns. The authors propose to overcome these difficulties by (1) using AlGaAs layers grown by OMCVD to act as front- and back-surface fields in order to confine the photogenerated minority carriers away from the surfaces, and (2) using the CLEFT technology to produce thin, separated films of this structure. It has been found that much of the necessary technologies have been developed and that the primary problem remaining to be solved is localized junction formation.

  5. Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process

    Science.gov (United States)

    Xian, Ji; Xiaodong, Zhang; Weihua, Kang; Zhili, Zhang; Jiahui, Zhou; Wenjun, Xu; Qi, Li; Gongli, Xiao; Zhijun, Yin; Yong, Cai; Baoshun, Zhang; Haiou, Li

    2016-02-01

    An 80-nm gate length metamorphic high electron mobility transistor (mHEMT) on a GaAs substrate with high indium composite compound-channels In0.7Ga0.3 As/In0.6Ga0.4 As and an optimized grade buffer scheme is presented. High 2-DEG Hall mobility values of 10200 cm2/(V·s) and a sheet density of 3.5 × 1012 cm-2 at 300 K have been achieved. The device's T-shaped gate was made by utilizing a simple three layers electron beam resist, instead of employing a passivation layer for the T-share gate, which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate and simplifying the device manufacturing process. The ohmic contact resistance Rc is 0.2 ω·mm when using the same metal system with the gate (Pt/Ti/Pt/Au), which reduces the manufacturing cycle of the device. The mHEMT device demonstrates excellent DC and RF characteristics. The peak extrinsic transconductance of 1.1 S/mm and the maximum drain current density of 0.86 A/mm are obtained. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are 246 and 301 GHz, respectively. Project supported by the Key Laboratory of Nano-Devices and Applications, Nano-Fabrication Facility of SINANO, Chinese Academy of Sciences, the National Natural Science Foundation of China (Nos. 61274077, 61474031, 61464003), the Guangxi Natural Science Foundation (Nos. 2013GXNSFGA019003, 2013GXNSFAA019335), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Project (No. 9140C140101140C14069), and the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449, YJCXS201529).

  6. A Study of School Leaders and How They Impact Classroom Use of Technology

    Science.gov (United States)

    Downs, Robert

    2011-01-01

    The purpose of this study was to examine the relationship between a principal's personality type and a school's classroom use of technology. Myers Briggs Type Indicator data was collected from 48 principals in a large suburban district in the Metro Atlanta area, as well as, observational data documenting student use of technology. The Georgia…

  7. Environmental Public Health Survelliance for Exposure to Respiratory Health Hazards: A Joint NASA/CDC Project to Use Remote Sensing Data for Estimating Airborne Particulate Matter Over the Atlanta, Georgia Metropolitan Area

    Science.gov (United States)

    Quattrochi, Dale A.; Rickman, Douglas; Mohammad, Al-Hamdan; Crosson, William; Estes, Maurice, Jr.; Limaye, Ashutosh; Qualters, Judith

    2008-01-01

    Describes the public health surveillance efforts of NASA, in a joint effort with the Center for Disease Control (CDC). NASA/MSFC and the CDC are partners in linking nvironmental and health data to enhance public health surveillance. The use of NASA technology creates value - added geospatial products from existing environmental data sources to facilitate public health linkages. The venture sought to provide remote sensing data for the 5-country Metro-Atlanta area and to integrate this environmental data with public health data into a local network, in an effort to prevent and control environmentally related health effects. Remote sensing data used environmental data (Environmental Protection Agency [EPA] Air Quality System [AQS] ground measurements and MODIS Aerosol Optical Depth [AOD]) to estimate airborne particulate matter over Atlanta, and linked this data with health data related to asthma. The study proved the feasibility of linking environmental data (MODIS particular matter estimates and AQS) with health data (asthma). Algorithms were developed for QC, bias removal, merging MODIS and AQS particulate matter data, as well as for other applications. Additionally, a Business Associate Agreement was negotiated for a health care provider to enable sharing of Protected Health Information.

  8. Feasibility and availability of {sup 68}Ga-labelled peptides

    Energy Technology Data Exchange (ETDEWEB)

    Decristoforo, Clemens [Innsbruck Medical University, Department of Nuclear Medicine, Innsbruck (Austria); European Directorate of Quality of Medicines, Group 14, Radioactive Compounds, The European Pharmacopeia, Strasbourg (France); Pickett, Roger D. [GE Healthcare, Little Chalfont (United Kingdom); European Directorate of Quality of Medicines, Group 14, Radioactive Compounds, The European Pharmacopeia, Strasbourg (France); Verbruggen, Alfons [University of Leuven, Laboratory of Radiopharmacy, Department of Pharmaceutical Sciences, Leuven (Belgium); European Directorate of Quality of Medicines, Group 14, Radioactive Compounds, The European Pharmacopeia, Strasbourg (France)

    2012-02-15

    {sup 68}Ga has attracted tremendous interest as a radionuclide for PET based on its suitable half-life of 68 min, high positron emission yield and ready availability from {sup 68}Ge/{sup 68}Ga generators, making it independent of cyclotron production. {sup 68}Ga-labelled DOTA-conjugated somatostatin analogues, including DOTA-TOC, DOTA-TATE and DOTA-NOC, have driven the development of technologies to provide such radiopharmaceuticals for clinical applications mainly in the diagnosis of somatostatin receptor-expressing tumours. We summarize the issues determining the feasibility and availability of {sup 68}Ga-labelled peptides, including generator technology, {sup 68}Ga generator eluate postprocessing methods, radiolabelling, automation and peptide developments, and also quality assurance and regulatory aspects. {sup 68}Ge/{sup 68}Ga generators based on SnO{sub 2}, TiO{sub 2} or organic matrices are today routinely supplied to nuclear medicine departments, and a variety of automated systems for postprocessing and radiolabelling have been developed. New developments include improved chelators for {sup 68}Ga that could open new ways to utilize this technology. Challenges and limitations in the on-site preparation and use of {sup 68}Ga-labelled peptides outside the marketing authorization track are also discussed. (orig.)

  9. Feasibility and availability of ⁶⁸Ga-labelled peptides.

    Science.gov (United States)

    Decristoforo, Clemens; Pickett, Roger D; Verbruggen, Alfons

    2012-02-01

    (68)Ga has attracted tremendous interest as a radionuclide for PET based on its suitable half-life of 68 min, high positron emission yield and ready availability from (68)Ge/(68)Ga generators, making it independent of cyclotron production. (68)Ga-labelled DOTA-conjugated somatostatin analogues, including DOTA-TOC, DOTA-TATE and DOTA-NOC, have driven the development of technologies to provide such radiopharmaceuticals for clinical applications mainly in the diagnosis of somatostatin receptor-expressing tumours. We summarize the issues determining the feasibility and availability of (68)Ga-labelled peptides, including generator technology, (68)Ga generator eluate postprocessing methods, radiolabelling, automation and peptide developments, and also quality assurance and regulatory aspects. (68)Ge/(68)Ga generators based on SnO(2), TiO(2) or organic matrices are today routinely supplied to nuclear medicine departments, and a variety of automated systems for postprocessing and radiolabelling have been developed. New developments include improved chelators for (68)Ga that could open new ways to utilize this technology. Challenges and limitations in the on-site preparation and use of (68)Ga-labelled peptides outside the marketing authorization track are also discussed.

  10. Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

    Science.gov (United States)

    Duan, Xiao-Ling; Zhang, Jin-Cheng; Xiao, Ming; Zhao, Yi; Ning, Jing; Hao, Yue

    2016-08-01

    A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage (V B) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits. Project supported by the National Science and Technology Major Project, China (Grant No. 2013ZX02308-002) and the National Natural Science Foundation of China (Grant Nos. 11435010, 61474086, and 61404099).

  11. Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications

    Science.gov (United States)

    Alim, Mohammad A.; Rezazadeh, Ali A.; Gaquiere, Christophe

    2016-05-01

    Thermal and small-signal model parameters analysis have been carried out on 0.5 μm × (2 × 100 μm) AlGaAs/GaAs HEMT grown on semi-insulating GaAs substrate and 0.25 μm × (2 × 100 μm) AlGaN/GaN HEMT grown on SiC substrate. Two different technologies are investigated in order to establish a detailed understanding of their capabilities in terms of frequency and temperature using on-wafer S-parameter measurement over the temperature range from -40 to 150 °C up to 50 GHz. The equivalent circuit parameters as well as their temperature-dependent behavior of the two technologies were analyzed and discussed for the first time. The principle elevation or degradation of transistor parameters with temperature demonstrates the great potential of GaN device for high frequency and high temperature applications. The result provides some valuable insights for future design optimizations of advanced GaN and a comparison of this with the GaAs technology.

  12. Effects of urbanization on streamflow in the Atlanta area (Georgia, USA): A comparative hydrological approach

    Science.gov (United States)

    Rose, S.; Peters, N.E.

    2001-01-01

    For the period from 1958 to 1996, streamflow characteristics of a highly urbanized watershed were compared with less-urbanized and non-urbanized watersheds within a 20 000 km2 region in the vicinity of Atlanta, Georgia: In the Piedmont and Blue Ridge physiographic provinces of the southeastern USA. Water levels in several wells completed in surficial and crystalline-rock aquifers were also evaluated. Data were analysed for seven US Geological Survey (USGS) stream gauges, 17 National Weather Service rain gauges, and five USGS monitoring wells. Annual runoff coefficients (RCs; runoff as a fractional percentage of precipitation) for the urban stream (Peachtree Creek) were not significantly greater than for the less-urbanized watersheds. The RCs for some streams were similar to others and the similar streams were grouped according to location. The RCs decreased from the higher elevation and higher relief watersheds to the lower elevation and lower relief watersheds: Values were 0.54 for the two Blue Ridge streams. 0.37 for the four middle Piedmont streams (near Atlanta), and 0.28 for a southern Piedmont stream. For the 25 largest stormflows, the peak flows for Peachtree Creek were 30% to 100% greater then peak flows for the other stream. The storm recession period for the urban stream was 1-2 days less than that for the other streams and the recession was characterized by a 2-day storm recession constant that was, on average, 40 to 100% greater, i.e. streamflow decreased more rapidly than for the other streams. Baseflow recession constants ranged from 35 to 40% lower for Peachtree Creek than for the other streams; this is attributed to lower evapotranspiration losses, which result in a smaller change in groundwater storage than in the less-urbanized watersheds. Low flow of Peachtree Creek ranged from 25 to 35% less than the other streams, possibly the result of decreased infiltration caused by the more efficient routing of stormwater and the paving of groundwater

  13. Technology.

    Science.gov (United States)

    Online-Offline, 1998

    1998-01-01

    Focuses on technology, on advances in such areas as aeronautics, electronics, physics, the space sciences, as well as computers and the attendant progress in medicine, robotics, and artificial intelligence. Describes educational resources for elementary and middle school students, including Web sites, CD-ROMs and software, videotapes, books,…

  14. GaN transistors for efficient power conversion

    CERN Document Server

    Lidow, Alex; de Rooij, Michael; Reusch, David

    2014-01-01

    The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

  15. Synthesis and Luminescent Properties of GaN and GaN-Mn Blue Nanocrystalline Thin-film Phosphor for FED

    Energy Technology Data Exchange (ETDEWEB)

    Bondar, V D; Felter, T E; Hunt, C E; Kucharsky, I Y; Chakhovskoi, A G

    2003-04-09

    The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and structural properties of films are studied. Luminescence and electron spin resonance (ESR) spectra of GaN and GaN-Mn thin films have been studied. The correlation between cathodoluminescence intensity and conductivity of GaN films has been found. The nature of emission centers in GaN and GaN-Mn thin films is discussed as well as mechanism of luminescence in these films is proposed.

  16. Single chip super broadband InGaN/GaN LED enabled by nanostructured substrate.

    Science.gov (United States)

    Yin, Stuart Shizhuo; Wang, Chao; Zhu, Wenbin; Yao, Jimmy; Zou, Jun; Lin, Xiaoyan; Luo, Claire

    2014-08-25

    A new type of LED, single chip super broadband InGaN/GaN LED is presented in this paper. The LED is composed of an InGaN/GaN quantum well layer deposited on the nanostructured sapphire substrate, inscribed by femtosecond laser ablation. The super broadband emission is enabled due to the large variation of indium composition in a small local area so that different wavelengths can be emitted over a small area and the summation of these different emission wavelengths forms super broadband emission, which covers the entire visible spectral range. The result of this paper represents a major technological advance in white light LED lighting because it enables single chip white LED lighting without the need of phosphor down converter that can significantly improve the efficiency without the Stokes loss and reduce the cost.

  17. ASSESSMENT OF GALLIUM OXIDE TECHNOLOGY

    Science.gov (United States)

    2017-08-01

    Universe" ...................................... 5 Figure 4: MEA Architecture [60...weight. Figure 4: MEA Architecture [60] 2.2 How Does Ga2O3 Compare to Other Semiconductors? We are paying attention to β-Ga2O3 because of its...growth is possible. • Limited crystal orientation have been demonstrated. • Technology base is narrowly located in Japan . Mainstream technology

  18. Health and treatment implications of food insufficiency among people living with HIV/AIDS, Atlanta, Georgia.

    Science.gov (United States)

    Kalichman, Seth C; Cherry, Chauncey; Amaral, Christina; White, Denise; Kalichman, Moira O; Pope, Howard; Swetsze, Connie; Jones, Michel; Macy, Rene

    2010-07-01

    HIV/AIDS is concentrated among the inner-city poor and poverty may directly interfere with HIV treatment. This study examined food insufficiency in relation to HIV-related health and treatment. A sample of 344 men and women living with HIV/AIDS in Atlanta, Georgia completed measures of food security, health, and HIV disease progression and treatment. HIV treatment adherence was monitored using unannounced pill counts. Results showed that half of people living with HIV/AIDS in this study lacked sufficient food, and food insufficiency was associated with multiple indicators of poor health, including higher HIV viral loads, lower CD4 cell counts, and poorer treatment adherence. Adjusted analyses showed that food insufficiency predicted HIV treatment non-adherence over and above years of education, employment status, income, housing, depression, social support, and non-alcohol substance use. Hunger and food insecurity are prevalent among people living with HIV/AIDS, and food insufficiency is closely related to multiple HIV-related health indicators, particularly medication adherence. Interventions that provide consistent and sustained meals to people living with HIV/AIDS are urgently needed.

  19. Solar hot water system installed at Day's Lodge, Atlanta, Georgia

    Energy Technology Data Exchange (ETDEWEB)

    None

    1980-09-01

    The solar energy hot water system installed in the Days Inns of America, Inc., Day's Lodge I-85 and Shallowford Road, NE Atlanta, Georgia is described. This system is one of eleven systems planned under this grant and was designed to provide for 81% of the total hot water demand. There are two separate systems, each serving one building of the lodge (total of 65 suites). The entire system contains only potable city water. The 1024 square feet of Grumman Sunstream Model 332 liquid flat plate collectors and the outside piping drains whenever the collector plates approach freezing or when power is interrupted. Solar heated water from the two above ground cement lined steel tanks (1000 gallon tank) is drawn into the electric domestic hot water (DHW) tanks as hot water is drawn. Electric resistance units in the DHW tanks top off the solar heated water, if needed, to reach thermostat setting. Operation of this system was begun in August, 1979. The solar components were partly funded ($18,042 of $36,084 cost) by the Department of Energy.

  20. Prevalence of Congenital Heart Defects in Metropolitan Atlanta, 1998–2005

    Science.gov (United States)

    Reller, Mark D.; Strickland, Matthew J.; Riehle-Colarusso, Tiffany; Mahle, William T.; Correa, Adolfo

    2008-01-01

    Objective To determine an accurate estimate of the prevalence of congenital heart defects (CHD) using current standard diagnostic modalities. Study design We obtained data on infants with CHD delivered during 1998–2005 identified by the Metropolitan Atlanta Congenital Defects Program, an active, population-based birth defects surveillance system. Physiologic shunts in infancy and shunts associated with prematurity were excluded. Selected infant and maternal characteristics of the cases were compared with those of the overall birth cohort. Results From 1998–2005 there were 398 140 births, of which 3240 infants had CHD, for an overall prevalence of 81.4/10 000 births. The most common CHD were muscular ventricular septal defect, perimembranous ventricular septal defect, and secundum atrial septal defect, with prevalence of 27.5, 10.6, and 10.3/10 000 births, respectively. The prevalence of tetralogy of Fallot, the most common cyanotic CHD, was twice that of transposition of the great arteries (4.7 vs. 2.3/10 000 births). Many common CHD were associated with older maternal age and multiple-gestation pregnancy; several were found to vary by sex. Conclusion This study, using a standardized cardiac nomenclature and classification, provides current prevalence estimates of the various CHD subtypes. These estimates can be used to assess variations in prevalence across populations, time or space. PMID:18657826

  1. The Winter Olympics in Lillehammer: the last dress rehearsal for Atlanta '96.

    Science.gov (United States)

    Cantwell, J D

    1994-06-01

    Buoyed by the Norwegian spirit and example, our Atlanta Olympic medical team returned with a sense of admiration and also with the self-confidence that we can provide the same quality of medical care in 1996. It won't be an easy task, though, as the summer games are at least eight times the size of the winter games. It will take great cooperation and self-sacrifice from area physicians and hospitals that are now seemingly enmeshed in vigorous competition for the health care dollar. Perhaps, like Bjornson, I am also an idealist. But I truly feel that we can rise to the occasion and cooperate fully in unselfish ways to accomplish what needs to be done. We will then be able to look back upon the experience with a great sense of self-satisfaction, not for personal accolades, but for a job well done. In 1996, we can show the world the remarkable and too often maligned American health care system and, in so doing, make friends with people from all over the globe. "Let our deeds speak for themselves," implored Bjornson. I toasted that thought with a second glass of Chateau Batailley, then took a long nap and dreamed that I had slapped the hockey puck past the Russian goalie in double overtime to bring a gold medal back to the good old U.S. of A.

  2. Susceptibility to Heat-Related Fluid and Electrolyte Imbalance Emergency Department Visits in Atlanta, Georgia, USA

    Directory of Open Access Journals (Sweden)

    Leila Heidari

    2016-10-01

    Full Text Available Identification of populations susceptible to heat effects is critical for targeted prevention and more accurate risk assessment. Fluid and electrolyte imbalance (FEI may provide an objective indicator of heat morbidity. Data on daily ambient temperature and FEI emergency department (ED visits were collected in Atlanta, Georgia, USA during 1993–2012. Associations of warm-season same-day temperatures and FEI ED visits were estimated using Poisson generalized linear models. Analyses explored associations between FEI ED visits and various temperature metrics (maximum, minimum, average, and diurnal change in ambient temperature, apparent temperature, and heat index modeled using linear, quadratic, and cubic terms to allow for non-linear associations. Effect modification by potential determinants of heat susceptibility (sex; race; comorbid congestive heart failure, kidney disease, and diabetes; and neighborhood poverty and education levels was assessed via stratification. Higher warm-season ambient temperature was significantly associated with FEI ED visits, regardless of temperature metric used. Stratified analyses suggested heat-related risks for all populations, but particularly for males. This work highlights the utility of FEI as an indicator of heat morbidity, the health threat posed by warm-season temperatures, and the importance of considering susceptible populations in heat-health research.

  3. GA-Gammon

    DEFF Research Database (Denmark)

    Irineo-Fuentes, Oscar; Cruz-Cortes, Nareli; Rodriguez-Henriquez, Francisco

    2006-01-01

    of the best board positions during a game. Best GA-Gammon individuals so obtained were tested in separated 5000-game tournaments against Pubeval itself, and Fuzzeval, a fuzzy controller-based player. Our experimental results indicate that the best individuals generated by GA-Gammon show similar performance...

  4. Multibias and thermal behavior of microwave GaN and GaAs based HEMTs

    Science.gov (United States)

    Alim, Mohammad A.; Rezazadeh, Ali A.; Gaquiere, Christophe

    2016-12-01

    Multibias and thermal characterizations on 0.25 μm × (2 × 100) μm AlGaN/GaN/SiC HEMT and 0.5 μm × (2 × 100) μm AlGaAs/InGaAs pseudomorphic HEMT have carried out for the first time. Two competitive device technologies are investigated with the variations of bias and temperature in order to afford a detailed realization of their potentialities. The main finding includes the self heating effect in the GaN device, zero temperature coefficient points at the drain current and transconductance in the GaAs device. The thermal resistance RTH of 7.1, 8.2 and 9.4 °C mm/W for the GaN device was estimated at 25, 75 and 150 °C respectively which are consistent with those found in the open literature. The temperature trend of the threshold voltage VT, Schottky barrier height ϕb, sheet charge densities of two dimensional electron gas ns, and capacitance under the gate Cg are exactly opposite in the two devices; whereas the knee voltage Vk, on resistance Ron, and series resistance Rseries are shows similar trend. The multi-bias and thermal behavior of the output current Ids, output conductance gds, transconductance gm, cut-off frequency ft, maximum frequency fmax, effective velocity of electron, veff and field dependent mobility, μ demonstrates a great potential of GaN device. These results provide some valuable insights for technology of preference for future and current applications.

  5. GaN: Defect and Device Issues

    Energy Technology Data Exchange (ETDEWEB)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  6. Annealing of GaN under high pressure of nitrogen

    CERN Document Server

    Porowski, S; Kolesnikov, D; Lojkowski, W; Jager, V; Jäger, W; Bogdanov, V; Suski, T; Krukowski, S

    2002-01-01

    Gallium nitride, aluminum nitride and indium nitride are basic materials for blue optoelectronic devices. The essential part of the technology of these devices is annealing at high temperatures. Thermodynamic properties of the Ga-N system and their consequences to application of high nitrogen pressure for the annealing of GaN based materials are summarized. The diffusion of Zn, Mg and Au in high dislocation density heteroepitaxial GaN/Al sub 2 O sub 3 layers will be compared with the diffusion in dislocation-free GaN single crystals and homoepitaxial layers. It will be shown that high dislocation density can drastically change the diffusion rates, which strongly affects the performance of nitride devices. Inter-diffusion of Al, Ga and In in AlGaN/GaN and InGaN/GaN quantum well (QW) structures will be also considered. It will be shown that in contrast to stability of metal contacts, which is strongly influenced by dislocations, the inter-diffusion of group III atoms in QW structures is not affected strongly by...

  7. Technology

    Directory of Open Access Journals (Sweden)

    Xu Jing

    2016-01-01

    Full Text Available The traditional answer card reading method using OMR (Optical Mark Reader, most commonly, OMR special card special use, less versatile, high cost, aiming at the existing problems proposed a method based on pattern recognition of the answer card identification method. Using the method based on Line Segment Detector to detect the tilt of the image, the existence of tilt image rotation correction, and eventually achieve positioning and detection of answers to the answer sheet .Pattern recognition technology for automatic reading, high accuracy, detect faster

  8. GaAs/GaSb nanowire heterostructures grown by MOVPE

    DEFF Research Database (Denmark)

    Jeppsson, Mattias; Dick, Kimberly A.; Wagner, Jakob Birkedal

    2008-01-01

    We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast t...

  9. Thermal instability of GaSb surface oxide

    Science.gov (United States)

    Tsunoda, K.; Matsukura, Y.; Suzuki, R.; Aoki, M.

    2016-05-01

    In the development of InAs/GaSb Type-II superlattice (T2SL) infrared photodetectors, the surface leakage current at the mesa sidewall must be suppressed. To achieve this requirement, both the surface treatment and the passivation layer are key technologies. As a starting point to design these processes, we investigated the GaSb oxide in terms of its growth and thermal stability. We found that the formation of GaSb oxide was very different from those of GaAs. Both Ga and Sb are oxidized at the surface of GaSb. In contrast, only Ga is oxidized and As is barely oxidized in the case of GaAs. Interestingly, the GaSb oxide can be formed even in DI water, which results in a very thick oxide film over 40 nm after 120 minutes. To examine the thermal stability, the GaSb native oxide was annealed in a vacuum and analyzed by XPS and Raman spectroscopy. These analyses suggest that SbOx in the GaSb native oxide will be reduced to metallic Sb above 300°C. To directly evaluate the effect of oxide instability on the device performance, a T2SL p-i-n photodetector was fabricated that has a cutoff wavelength of about 4 μm at 80 K. As a result, the surface leakage component was increased by the post annealing at 325°C. On the basis of these results, it is possible to speculate that a part of GaSb oxide on the sidewall surface will be reduced to metallic Sb, which acts as an origin of additional leakage current path.

  10. Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures

    Science.gov (United States)

    Lim, Caroline B.; Beeler, Mark; Ajay, Akhil; Lähnemann, Jonas; Bellet-Amalric, Edith; Bougerol, Catherine; Schörmann, Jörg; Eickhoff, Martin; Monroy, Eva

    2016-05-01

    This paper assesses nonpolar m-oriented GaN:Si/Al(Ga)N heterostructures grown on free-standing GaN for intersubband optoelectronics in the short-wavelength, mid- and far-infrared ranges. Characterization results are compared with reference c-plane samples and interpreted by correlation with self-consistent Schrödinger-Poisson calculations. In the near- and mid-infrared regions, we demonstrate m-GaN/Al(Ga)N multi-quantum-wells exhibiting room-temperature intersubband absorption tunable in the range of 1.5-5.8 µm (827-214 meV), the long wavelength limit being set by the second order of the Reststrahlen band in the GaN substrates. Extending the study to the far-infrared region, low-temperature intersubband transitions in the 1.5-9 THz range (6.3-37.4 meV) are observed in larger m-plane GaN/AlGaN multi-quantum-wells, covering most of the 7-10 THz band forbidden to GaAs-based technologies.

  11. Implementation and Performance of GaAs Digital Signal Processing ASICs

    Science.gov (United States)

    Whitaker, William D.; Buchanan, Jeffrey R.; Burke, Gary R.; Chow, Terrance W.; Graham, J. Scott; Kowalski, James E.; Lam, Barbara; Siavoshi, Fardad; Thompson, Matthew S.; Johnson, Robert A.

    1993-01-01

    The feasibility of performing high speed digital signal processing in GaAs gate array technology has been demonstrated with the successful implementation of a VLSI communications chip set for NASA's Deep Space Network. This paper describes the techniques developed to solve some of the technology and implementation problems associated with large scale integration of GaAs gate arrays.

  12. Racial disparities in travel time to radiotherapy facilities in the Atlanta metropolitan area.

    Science.gov (United States)

    Peipins, Lucy A; Graham, Shannon; Young, Randall; Lewis, Brian; Flanagan, Barry

    2013-07-01

    Low-income women with breast cancer who rely on public transportation may have difficulty in completing recommended radiation therapy due to inadequate access to radiation facilities. Using a geographic information system (GIS) and network analysis we quantified spatial accessibility to radiation treatment facilities in the Atlanta, Georgia metropolitan area. We built a transportation network model that included all bus and rail routes and stops, system transfers and walk and wait times experienced by public transportation system travelers. We also built a private transportation network to model travel times by automobile. We calculated travel times to radiation therapy facilities via public and private transportation from a population-weighted center of each census tract located within the study area. We broadly grouped the tracts by low, medium and high household access to a private vehicle and by race. Facility service areas were created using the network model to map the extent of areal coverage at specified travel times (30, 45 and 60 min) for both public and private modes of transportation. The median public transportation travel time to the nearest radiotherapy facility was 56 min vs. approximately 8 min by private vehicle. We found that majority black census tracts had longer public transportation travel times than white tracts across all categories of vehicle access and that 39% of women in the study area had longer than 1 h of public transportation travel time to the nearest facility. In addition, service area analyses identified locations where the travel time barriers are the greatest. Spatial inaccessibility, especially for women who must use public transportation, is one of the barriers they face in receiving optimal treatment. Published by Elsevier Ltd.

  13. Time-series Analysis of Heat Waves and Emergency Department Visits in Atlanta, 1993 to 2012.

    Science.gov (United States)

    2017-05-31

    Heat waves are extreme weather events that have been associated with adverse health outcomes. However, there is limited knowledge of heat waves' impact on population morbidity, such as emergency department (ED) visits. We investigated associations between heat waves and ED visits for 17 outcomes in Atlanta over a 20-year period, 1993-2012. Associations were estimated using Poisson log-linear models controlling for continuous air temperature, dew-point temperature, day of week, holidays, and time trends. We defined heat waves as periods of consecutive days with temperatures beyond the 98th percentile of the temperature distribution over the period from 1945-2012. We considered six heat wave definitions using maximum, minimum, and average air temperatures and apparent temperatures. Associations by heat wave characteristics were examined. Among all outcome-heat wave combinations, associations were strongest between ED visits for acute renal failure and heat waves defined by maximum apparent temperature at lag 0 [relative risk (RR) = 1.15; 95% confidence interval (CI): 1.03-1.29], ED visits for ischemic stroke and heat waves defined by minimum temperature at lag 0 (RR = 1.09; 95% CI: 1.02-1.17), and ED visits for intestinal infection and heat waves defined by average temperature at lag 1 (RR = 1.10; 95% CI: 1.00-1.21). ED visits for all internal causes were associated with heat waves defined by maximum temperature at lag 1 (RR = 1.02; 95% CI: 1.00, 1.04). Heat waves can confer additional risks of ED visits beyond those of daily air temperature, even in a region with high air-conditioning prevalence. https://doi.org/10.1289/EHP44.

  14. Responses of urban heat island in Atlanta to different land-use scenarios

    Science.gov (United States)

    Fu, Peng; Weng, Qihao

    2017-06-01

    The urban heat island (UHI) effect changes heat and water cycles in urban areas, and has been accused of elevating energy consumption, deteriorating living environment, and increasing mortality rates. Understanding various UHI effects necessitates a systematic modeling approach. A major problem in UHI simulations is that urban areas were either considered to have only one category of land use/cover or outdated in land use/cover patterns due to the lack of high resolution data. Therefore, this study aims at integrating up-to-date remotely sensed land use/cover data with the Weather Research and Forecasting (WRF/UCM)/Urban Canopy Model modeling systems to simulate surface temperature patterns in Atlanta, Georgia. In addition, three land-use scenarios, i.e., spontaneous scenario (SS), concentrated scenario (CS), and local policy scenario (LPS), were designed and incorporated into the modeling. Five numerical experiments were conducted by using the Weather Research and Forecasting (WRF) model to explore the impact of urbanization-induced land-cover changes on temperature patterns. Land use and land-cover patterns under all three scenarios suggested that urban growth would continue through in-filling development and outward expansion. Compared to temperature simulations in 2011, temperature maps corresponding to the three urban growth scenarios showed warmer and cooler temperature patterns outside and inside the urban core, respectively. Analysis of the mean diurnal temperature cycle suggested that the highest temperature difference of 3.9 K was observed between 2011 and the LPS, and occurred around 22:00 local time. Overall, the simulations showed different UHI effects respond to the land-use scenarios in the summer. It is recommended for urban managers and policy makers to reflect on the potential impacts of alternative urban growth policies on thermal environment.

  15. Assembly of phosphonic acids on GaN and AlGaN

    Energy Technology Data Exchange (ETDEWEB)

    Simpkins, B S; Stine, R; Theodore, N D; Pehrsson, P E [Chemistry Division, Naval Research Laboratory, Washington DC (United States); Hong, S [Thomas Jefferson High School, McClean, VA (United States); Maekinen, A J [Optical Sciences Division, Naval Research Laboratory, Washington, DC (United States); Mastro, M A; Eddy, C R Jr [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC (United States)

    2010-01-13

    Self-assembled monolayers of octadecylphosphonic acid and 16-phosphonohexadecanoic acid (PHDA) were formed on the semiconductor substrates gallium nitride (GaN) and aluminium gallium nitride (AlGaN). The presence of the molecular layers was verified through x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. Structural information was acquired with infrared spectroscopy which verified the bonding orientation of the carboxyl-containing PHDA. The impact of the molecular layers on the channel conductivity and the surface electronic structure of an AlGaN/GaN heterostructure was measured. Our results indicate that pinning of the surface Fermi level prohibits modification of the channel conductivity by the layer. However, a surface dipole of {approx}0.8 eV is present and associated with both phosphonic acid layers. These results are of direct relevance to field-effect-based biochemical sensors and metal-semiconductor contact formation for this system and provide a fundamental basis for further applications of GaN and AlGaN technology in the fields of biosensing and microelectronics.

  16. 15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates

    Energy Technology Data Exchange (ETDEWEB)

    Vaisman, Michelle [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Perl, Emmett [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fan, Shizhao [University of Illinois Urbana-Champaign; Yaung, Kevin Nay [Yale University; Martin-Martin, Diego [Universidad Rey Juan Carlos; Yu, Zhengshan J. [Arizona State University; Leilaeioun, Mehdi [Arizona State University; Holman, Zachary C. [Arizona State University; Lee, Minjoo L. [University of Illinois Urbana-Champaign

    2017-07-26

    As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. We further present a separate Si bottom cell with a 1.7 eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.

  17. Degradation Mechanisms for GaN and GaAs High Speed Transistors

    Directory of Open Access Journals (Sweden)

    Fan Ren

    2012-11-01

    Full Text Available We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs as well as Heterojunction Bipolar Transistors (HBTs in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate, and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

  18. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  19. Modeling the spatial differentiation in cloud-to-ground lightning: A case study in Atlanta, Georgia, USA

    Science.gov (United States)

    Strikas, Ona

    Urban cloud-to-ground (CG) lightning enhancement has been well documented for Atlanta, Georgia. This study builds on those investigations using modeling techniques. Numerous styles of analyses and regressions were conducted to establish patterns of CG lightning over the North Georgia region. CG lightning demonstrated clustering for all years of data: 1995--2008. However, the first strike of each day with lightning was randomly distributed according to a Poisson distribution, demonstrating the clustering is not due to permanent features. Attempts were unsuccessful to model CG lightning clusters as either a Matern or Thomas Poisson point process. Regressions of CG lightning with built environment covariates---FAA aviation obstacle locations and heights, population density, road length density, distance to the center of Atlanta, PM10 emissions data, distance to highways, and coal plant locations---as well as natural variables such as projected coordinate easting, northing, and NWS severe thunderstorm status were executed at resolutions of 1km, 2km, 4km, and 8km. Analyses demonstrated significantly higher flash frequency near FAA aviation obstacles. With an R2 value of 0.22, taller obstacles are struck more frequently than shorter obstacles. Regressions with road length density revealed little explanatory power (maximum R2=0.19), but demonstrated a positive correlation independent of scale. A multi-level visualization technique demonstrates the road length density correlation loses accuracy within dense urban corridors. Distance from Atlanta shows a negative correlation, but only at larger scales. Subsetting both regressions by direction reveals a significant difference on the Eastern and Western sides of Atlanta. Subsetting both regressions only to Gwinnett County, Georgia illustrates road length density has no correlation with flash frequency, and distance to Atlanta is still a scale dependent process. PM10 emissions analysis suggests that CG amplification is most

  20. The effects of concentrated system on the electrical parameters of GaInP/GaAs solar cell

    Science.gov (United States)

    Kınacı, Barış

    2017-02-01

    III-V concentrator solar cells are suitable materials in order to reduce the cost of photovoltaic electricity. By using Fresnel lens in concentrating photovoltaic technology is an effective way to entirely use the sunlight. In the present study, the research on the efficiency analysis of the GaInP/GaAs concentrated solar cell structure with AlGaAs tunnel junction was performed. The electrical output parameters of this structure were determined by concentrated system with Fresnel lens. The current-voltage measurements of concentrated solar cell were carried out at room temperature under both dark and air mass 1.5 global radiations. The parameters of GaInP/GaAs concentrated solar cell at 1 Sun and at 32 Suns are compared. It is obtained that the integration of the concentrated system on the solar cell structure improves the device performance by ≈7.5%.

  1. Occurrence of organic wastewater-indicator compounds in urban streams of the Atlanta area, Georgia, 2003-2006

    Science.gov (United States)

    Lawrence, Stephen J.; LaFontaine, Jacob H.

    2010-01-01

    Between March 2003 and January 2006, 863 water samples were collected from streams in seven urban watersheds with varying land uses within or near the City of Atlanta, Georgia. Sixty-four sampling sites representing three site types were established in those watersheds. The first type consisted of sites within three watersheds not affected by combined sewer overflows; these were designated as the control basins. The second and third site types were established in four watersheds and were designated as sites upstream or downstream from combined sewer outfalls.

  2. Technical report. Graduate Student Focus on Diversity Workshop, 1999 SIAM Annual Meeting, Atlanta, Georgia, May 12, 1999

    Energy Technology Data Exchange (ETDEWEB)

    none

    1999-05-12

    The Third SIAM Graduate Student Focus on Diversity workshop was held May 12 at the Sheraton Atlanta Hotel on the first day of the 1999 SIAM Annual Meeting. The day-long workshop consisted of several different activities: eight technical talks by under-represented minority graduate students, a lively panel discussion concerning the benefits of undergraduate summer research programs, informal luncheon and pizza breaks to foster social interaction, and an evening forum with candid discussions of graduate school experiences from a minority graduate student perspective. These sessions were open to the entire SIAM community and served to highlight the progress, achievements, and aspirations of the workshop participants.

  3. Some Foundations for Empirical Study in the Euclidean Spatial Model of Social Choice

    Science.gov (United States)

    1991-08-01

    Barrault 75634 PARIS C~dex 27. S. Barbera................................................................................ Dept. d’Economica I Historia ...1 ISYE Georgia Institute of Technology Atlanta, GA 30332 43 . R o b e rt Fo ley

  4. GaSbBi/GaSb quantum well laser diodes

    Science.gov (United States)

    Delorme, O.; Cerutti, L.; Luna, E.; Narcy, G.; Trampert, A.; Tournié, E.; Rodriguez, J.-B.

    2017-05-01

    We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 μm at 80 K, and lasing under pulsed operation at room-temperature near 2.7 μm.

  5. Ultra High p-doping Material Research for GaN Based Light Emitters

    Energy Technology Data Exchange (ETDEWEB)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing

  6. Ammonia plasma passivation of GaAs in downstream microwave and radio-frequency parallel plate plasma reactors

    OpenAIRE

    Aydil, Eray S.; Giapis, Konstantinos P.; Gottscho, Richard A.; Donnelly, Vincent M.; Yoon, Euijoon

    1993-01-01

    The poor electronic properties of the GaAs surface and GaAs–insulator interfaces, generally resulting from large density of surface/interface states, have limited GaAs device technology. Room-temperature ammonia plasma (dry) passivation of GaAs surfaces, which reduces the surface state density, is investigated as an alternative to wet passivation techniques. Plasma passivation is more compatible with clustered-dry processing which provides better control of the processing environment, and thu...

  7. Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Yongwei; Zhang, Miao [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Deng, Chuang; Men, Chuanling [School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China); Chen, Da [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Zhu, Lei; Yu, Wenjie; Wei, Xing [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Di, Zengfeng, E-mail: zfdi@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Xi [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2015-08-15

    Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10{sup 17} cm{sup −2}, the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10{sup 17} cm{sup −2}. • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10{sup 17} cm{sup −2}, the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10{sup 17} cm{sup −2} H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF{sub 6} plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era.

  8. Temperature Dependence of GaN HEMT Small Signal Parameters

    Directory of Open Access Journals (Sweden)

    Ali M. Darwish

    2011-01-01

    Full Text Available This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0–150°C range. The changes with temperature for transconductance (m, output impedance (ds and ds, feedback capacitance (dg, input capacitance (gs, and gate resistance (g are measured. The variations with temperature are established for m, ds, ds, dg, gs, and g in the GaN technology. This information is useful for MMIC designs.

  9. Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

    Science.gov (United States)

    Fernández-Garrido, Sergio; Kong, Xiang; Gotschke, Tobias; Calarco, Raffaella; Geelhaar, Lutz; Trampert, Achim; Brandt, Oliver

    2012-12-12

    We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and coherently strained AlN layers on 6H-SiC(0001) and SiC(0001̅) substrates to ensure a well-defined polarity and an absence of structural and morphological defects. On N-polar AlN, a homogeneous and dense N-polar GaN nanowire array forms, evidencing that GaN nanowires form spontaneously in the absence of defects. On Al-polar AlN, we do not observe the formation of Ga-polar GaN NWs. Instead, sparse N-polar GaN nanowires grow embedded in a Ga-polar GaN layer. These N-polar GaN nanowires are shown to be accidental in that the necessary polarity inversion is induced by the formation of Si(x)N. The present findings thus demonstrate that spontaneously formed GaN nanowires are irrevocably N-polar. Due to the strong impact of the polarity on the properties of GaN-based devices, these results are not only essential to understand the spontaneous formation of GaN nanowires but also of high technological relevance.

  10. Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Zhan, Teng

    2015-01-01

    Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs...... that nanopillar LEDs can be significantly improved byapplying a combination of ion-damage curing techniques, including thermal and acidic treatment,and have analyzed their effects using x-ray photoelectron spectroscopy....

  11. Evaluation of stream water quality in Atlanta, Georgia, and the surrounding region (USA)

    Science.gov (United States)

    Peters, N.E.; Kandell, S.J.

    1999-01-01

    A water-quality index (WQI) was developed from historical data (1986-1995) for streams in the Atlanta Region and augmented with 'new' and generally more comprehensive biweekly data on four small urban streams, representing an industrial area, a developed medium-density residential area and developing and developed low-density residential areas. Parameter WQIs were derived from percentile ranks of individual water-quality parameter values for each site by normalizing the constituent ranks for values from all sites in the area for a base period, i.e. 1990-1995. WQIs were developed primarily for nutrient-related parameters due to data availability. Site WQIs, which were computed by averaging the parameter WQIs, range from 0.2 (good quality) to 0.8 (poor quality), and increased downstream of known nutrient sources. Also, annual site WQI decreases from 1986 to 1995 at most long-term monitoring sites. Annual site WQI for individual parameters correlated with annual hydrological characteristics, particularly runoff, precipitation quantity, and water yield, reflecting the effect of dilution on parameter values. The WQIs of the four small urban streams were evaluated for the core-nutrient-related parameters, parameters for specific dissolved trace metal concentrations and sediment characteristics, and a species diversity index for the macro-invertebrate taxa. The site WQI for the core-nutrient-related parameters used in the retrospective analysis was, as expected, the worst for the industrial area and the best for the low-density residential areas. However, macro-invertebrate data indicate that although the species at the medium-density residential site were diverse, the taxa at the site were for species tolerant of degraded water quality. Furthermore, although a species-diversity index indicates no substantial difference between the two low-density residential areas, the number for macro-invertebrates for the developing area was much less than that for the developed area

  12. Effects of Urbanization on Stream Water Quality in the City of Atlanta, Georgia, USA

    Science.gov (United States)

    Peters, N. E.

    2009-05-01

    A long-term stream water-quality monitoring network was established in the City of Atlanta (COA) during 2003 to assess baseline water-quality conditions and the effects of urbanization on stream water quality. Routine hydrologically-based manual stream sampling, including several concurrent manual point and equal width increment sampling, was conducted approximately 12 times per year at 21 stations, with drainage areas ranging from 3.7 to 232 km2. Eleven of the stations are real-time (RT) water-quality stations having continuous measures of stream stage/discharge, pH, dissolved oxygen, specific conductance, water temperature, and turbidity, and automatic samplers for stormwater collection. Samples were analyzed for field parameters, and a broad suite of water-quality and sediment-related constituents. This paper summarizes an evaluation of field parameters and concentrations of major ions, minor and trace metals, nutrient species (nitrogen and phosphorus), and coliform bacteria among stations and with respect to watershed characteristics and plausible sources from 2003 through September 2007. The concentrations of most constituents in the COA streams are statistically higher than those of two nearby reference streams. Concentrations are statistically different among stations for several constituents, despite high variability both within and among stations. The combination of routine manual sampling, automatic sampling during stormflows, and real-time water-quality monitoring provided sufficient information about the variability of urban stream water quality to develop hypotheses for causes of water-quality differences among COA streams. Fecal coliform bacteria concentrations of most individual samples at each station exceeded Georgia's water-quality standard for any water-usage class. High chloride concentrations occur at three stations and are hypothesized to be associated with discharges of chlorinated combined sewer overflows, drainage of swimming pool(s), and

  13. Prediction of Severe Acute Pancreatitis Using a Decision Tree Model Based on the Revised Atlanta Classification of Acute Pancreatitis.

    Directory of Open Access Journals (Sweden)

    Zhiyong Yang

    Full Text Available To develop a model for the early prediction of severe acute pancreatitis based on the revised Atlanta classification of acute pancreatitis.Clinical data of 1308 patients with acute pancreatitis (AP were included in the retrospective study. A total of 603 patients who were admitted to the hospital within 36 hours of the onset of the disease were included at last according to the inclusion criteria. The clinical data were collected within 12 hours after admission. All the patients were classified as having mild acute pancreatitis (MAP, moderately severe acute pancreatitis (MSAP and severe acute pancreatitis (SAP based on the revised Atlanta classification of acute pancreatitis. All the 603 patients were randomly divided into training group (402 cases and test group (201 cases. Univariate and multiple regression analyses were used to identify the independent risk factors for the development of SAP in the training group. Then the prediction model was constructed using the decision tree method, and this model was applied to the test group to evaluate its validity.The decision tree model was developed using creatinine, lactate dehydrogenase, and oxygenation index to predict SAP. The diagnostic sensitivity and specificity of SAP in the training group were 80.9% and 90.0%, respectively, and the sensitivity and specificity in the test group were 88.6% and 90.4%, respectively.The decision tree model based on creatinine, lactate dehydrogenase, and oxygenation index is more likely to predict the occurrence of SAP.

  14. Highly Polarized Electrons from GaAs-GaAsP and InGaAs-AlGaAs Strained Layer Superlattice Photocathodes

    CERN Document Server

    Nakanishi, T; Kuwahara, M; Naniwa, K; Nishitani, T; Okumi, S; Yamamoto, N; Yasui, K

    2004-01-01

    GaAs-GaAsP strained layer superlattice photocathode has been developed for highly polarized electron beams. This cathode achieved a maximum polarization of 92% with a quantum efficiency of 0.5%. Criteria for achieving the highest polarization together with high quantum efficiency using superlattice photocathodes are discussed based on experimental spin-resolved quantum efficiency spectra of GaAs-AlGaAs, InGaAs-AlGaAs and GaAs-GaAsP superlattice structures.

  15. 2015 Lowndes County (GA) Lidar

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — TASK NAME: NOAA OCM Lidar for Lowndes County, GA with the option to Collect Lidar in Cook and Tift Counties, GA Lidar Data Acquisition and Processing Production Task...

  16. Technology of gallium nitride crystal growth

    CERN Document Server

    Ehrentraut, Dirk; Bockowski, Michal

    2010-01-01

    This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.

  17. Coulomb excitation of Ga-73

    NARCIS (Netherlands)

    Diriken, J.; Stefanescu, I.; Balabanski, D.; Blasi, N.; Blazhev, A.; Bree, N.; Cederkaell, J.; Cocolios, T. E.; Davinson, T.; Eberth, J.; Ekstrom, A.; Fedorov, D. V.; Fedosseev, V. N.; Fraile, L. M.; Franchoo, S.; Georgiev, G.; Gladnishki, K.; Huyse, M.; Ivanov, O. V.; Ivanov, V. S.; Iwanicki, J.; Jolie, J.; Konstantinopoulos, T.; Kroell, Th.; Kruecken, R.; Koester, U.; Lagoyannis, A.; Lo Bianco, G.; Maierbeck, P.; Marsh, B. A.; Napiorkowski, P.; Patronis, N.; Pauwels, D.; Reiter, P.; Seliverstov, M.; Sletten, G.; Van de Walle, J.; Van Duppen, P.; Voulot, D.; Walters, W. B.; Warr, N.; Wenander, F.; Wrzosek, K.

    2010-01-01

    The B(E2; I-i -> I-f) values for transitions in Ga-71(31)40 and Ga-73(31)42 were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of Ga-71,Ga-73 at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were dete

  18. Positron emitting [68Ga]Ga-based imaging agents: chemistry and diversity.

    Science.gov (United States)

    Velikyan, Irina

    2011-09-01

    Positron Emission Tomography (PET) field and, in particular utilization of (68)Ga radiometal is getting momentum. The development of new imaging agents for targeted, pre-targeted, non-targeted imaging and their clinical applications is accelerating worldwide. The pharmacopoeia monographs regarding generator produced (68)Ga radionuclide and (68)Ga-labeled somatostatin (SST) analogues are in progress. The number of commercial generators and automated synthesizers for (68)Ga-labeling chemistry is increasing constantly. Development of a molecular imaging agent is a complex process including identification of the biological target, respective lead compound, synthesis of the imaging agent, its chemical characterization, pre-clinical, and clinical evaluation. The introduction of new radiopharmaceuticals and their accessibility are important factors determining the expansion of clinical nuclear medicine for early disease detection and personalized medicine with higher therapeutic efficiency. Further, the availability of the technology for GMP compliant automated tracer production can facilitate the introduction of new radiopharmaceuticals due to the ability to conduct standardized and harmonized multi-center studies for regulatory approval. This review reflects on the current status of (68)Ga in PET field with the focus on the achievements in the chemistry as well as diversity and potential of the resulting tracers.

  19. Development of a GaAs Monolithic Surface Acoustic Wave Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1999-03-08

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback loop with a four-stage GaAs MESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

  20. Development of a GaAs Monolithic Surface Acoustic Wave Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1999-03-08

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback loop with a four-stage GaAs MESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

  1. Atlanta Ranks 4th on EPAs List of Cities with the Most Energy Star Certified Buildings/Energy efficiency leads to a stronger economy and healthier environmen

    Science.gov (United States)

    ATLANTA - The U.S. Environmental Protection Agency (EPA) has announced its eighth-annual Top Cities list, which ranks the 25 U.S. metropolitan areas with the most Energy Star certified commercial buildings in the preceding calendar year with Atlan

  2. Health Impact Assessment of the Boone Boulevard Green Street Project in the Proctor Creek Watershed of Atlanta - Urban Waters National Training Workshop

    Science.gov (United States)

    Proctor Creek is one of the most impaired creeks in metro-Atlanta due to exceedance of state water quality standards for fecal coliforms. The topography, prevalence of impervious surfaces in the watershed, and a strained combined sewer system have contributed to pervasive floodin...

  3. Terahertz pulse detection by the GaAs Schottky diodes

    Science.gov (United States)

    Laperashvili, Tina; Kvitsiani, Orest; Imerlishvili, Ilia; Laperashvili, David

    2010-06-01

    We present the results of experimental studies of physical properties of the detection process of GaAs Schottky diodes for terahertz frequency radiation. The development of technology in the THz frequency band has a rapid progress recently. Considered as an extension of the microwave and millimeter wave bands, the THz frequency offers greater communication bandwidth than is available at microwave frequencies. The Schottky barrier contact has an important role in the operation of many GaAs devices. GaAs Schottky diodes have been the primary nonlinear device used in millimeter and sub millimeter wave detectors and receivers. GaAs Schottky diodes are especially interesting due to their high mobility transport characteristics, which allows for a large reduction of the resistance-capacitance (RC) time constant and thermal noise. In This work are investigated the electrical and photoelectric properties of GaAs Schottky diodes. Samples were obtained by deposition of different metals (Au, Ni, Pt, Pd, Fe, In, Ga, Al) on semiconductor. For fabrication metal-semiconductor (MS) structures is used original method of metal electrodepositing. In this method electrochemical etching of semiconductor surface occurs just before deposition of metal from the solution, which contains etching material and metal ions together. For that, semiconductor surface cleaning processes and metal deposition carries out in the same technological process. In the experiments as the electrolyte was used aqueous solution of chlorides. Metal deposition was carried out at room temperature.

  4. GaSe oxidation in air: from bulk to monolayers

    Science.gov (United States)

    Rahaman, Mahfujur; Rodriguez, Raul D.; Monecke, Manuel; Lopez-Rivera, Santos A.; Zahn, Dietrich R. T.

    2017-10-01

    Two-dimensional (2D) van derWaals semiconductors have been the subject of intense research due to their low dimensionality and tunable optoelectronic properties. However, the stability of these materials in air is one of the important issues that needs to be clarified, especially for technological applications. Here the time evolution of GaSe oxidation from monolayer to bulk is investigated by Raman spectroscopy, photoluminescence emission, and x-ray photoelectron spectroscopy. The Raman spectroscopy study reveals that GaSe monolayers become oxidized almost immediately after exposure to air. However, the oxidation is a self-limiting process taking roughly 5 h to penetrate up to 3 layers of GaSe. After oxidation, GaSe single-layers decompose into amorphous Se which has a strong Raman cross section under red excitation. The present study provides a clear picture of the stability of GaSe in air and will guide future research of GaSe from single- to few-layers for the appropriate development of novel technological applications for this promising 2D material.

  5. Analysis of the thermal behavior of AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Russo, Salvatore, E-mail: salvatore.russo3@unina.it [Department of Biomedical, Electronics, and Telecommunications Engineering, University of Naples Federico II, via Claudio 21, 80125 Naples (Italy); D' Alessandro, Vincenzo; Costagliola, Maurizio; Sasso, Grazia; Rinaldi, Niccolo [Department of Biomedical, Electronics, and Telecommunications Engineering, University of Naples Federico II, via Claudio 21, 80125 Naples (Italy)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer The thermal behavior of advanced multifinger AlGaN/GaN HEMTs grown on SiC is analyzed. Black-Right-Pointing-Pointer The study is performed through accurate FEM simulations and DC/dynamic measurements. Black-Right-Pointing-Pointer The FEM analysis is supported by an in-house tool devised for a smart mesh generation. Black-Right-Pointing-Pointer Illustrative technology/layout guidelines to minimize the thermal issues are provided. - Abstract: The thermal behavior of state-of-the-art multifinger AlGaN/GaN HEMTs grown on SiC is thoroughly analyzed under steady-state and dynamic conditions. Accurate 3-D FEM simulations - based on a novel in-house tool devised to automatically build the device mesh - are performed using a commercial software to explore the influence of various layout and technological solutions on the temperature field. An in-house routine is employed to determine the Foster/Cauer networks suited to describe the dynamic heat propagation through the device structure. To conclude, various experimental techniques are employed to assess the thermal resistance and to allow the monitoring of the thermal impedance versus time of the transistors under test.

  6. An extrinsic fmax > 100 GHz InAlN/GaN HEMT with AlGaN back barrier

    Institute of Scientific and Technical Information of China (English)

    Liu Bo; Feng Zhihong; Dun Shaobo; Zhang Xiongwen; Gu Guodong; Wang Yuangang; Xu Peng

    2013-01-01

    We report the DC and RF performance of InAlN/GaN high-electron mobility transistors with AlGaN back barrier grown on SiC substrates.These presented results confirm the high performance that is reachable by InAlN-based technology.The InAlN/GaN HEMT sample showed a high 2DEG mobility of 1550 cm2/(V·s) at a 2DEG density of 1.7 × 1013 cm-2.DC and RF measurements were performed on the unpassivated device with 0.2 μm "T" gate.The maximum drain current density at VGs =2 V is close to 1.05 A/mm in a reproducible way.The reduction in gate leakage current helps to increase the frequency performance of AlGaN back barrier devices.The power gain cut-off frequency of a transistor with an AlGaN back barrier is 105 GHz,which is much higher than that of the device without an AlGaN back barrier at the same gate length.These results indicate InAlN/GaN HEMT is a promising candidate for millimeter-wave application.

  7. Process in manufacturing high efficiency AlGaAs/GaAs solar cells by MO-CVD

    Science.gov (United States)

    Yeh, Y. C. M.; Chang, K. I.; Tandon, J.

    1984-01-01

    Manufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.

  8. Toward a Better Understanding of Non-Addicted, Methamphetamine-Using, Men who Have Sex with Men (MSM) in Atlanta.

    Science.gov (United States)

    Dew, Brian J

    2010-05-14

    Methamphetamine use has increasingly become linked with sexual risk behaviors among men have sex with men (MSM). Yet, the majority of research has been done with methamphetamine dependent MSM or with samples in which addiction to the substance was not evaluated. Furthermore, research with methamphetamine-using MSM in the Southern U.S. is lacking. In this study, focus groups and in-depth interviews were conducted in order to understand the motives, context, and other facilitators and barriers of methamphetamine use among non-addicted MSM residing in Atlanta. Participants included 30 non-addicted, methamphetamine-using MSM and 16 local mental and public health officials. Findings from the first of this two-phase formative research project will result in the initial development of a community-tested, culturally-specific social marketing campaign and an individual-based intervention based in HIV-testing facilities.

  9. Development of a GaAs-Based Monolithic Surface Acoustic Wave Integrated Chemical Microsensor

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1998-10-28

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other rf applications.

  10. Conduction, reverse conduction and switching characteristics of GaN E-HEMT

    DEFF Research Database (Denmark)

    Sørensen, Charlie; Lindblad Fogsgaard, Martin; Christiansen, Michael Noe;

    2015-01-01

    In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using...

  11. PM emissions measurements of in-service commercial aircraft engines during the Delta-Atlanta Hartsfield Study

    Science.gov (United States)

    Lobo, Prem; Hagen, Donald E.; Whitefield, Philip D.; Raper, David

    2015-03-01

    This paper describes the results of the physical characterization of aircraft engine PM emission measurements conducted during the Delta-Atlanta Hartsfield Study at the Hartsfield-Jackson Atlanta International Airport. Engine exit plane PM emissions were sampled from on-wing engines on several in-service commercial transport aircraft from the fleet of Delta Airlines. The size distributions were lognormal in nature with a single mode. The geometric mean diameter was found to increase with increasing engine thrust, ranging from 15 nm at idle to 40 nm at takeoff. PM number- and mass-based emission indices were observed to be higher at the idle conditions (4% and 7%), lowest at 15%-30% thrust, and then increase with increasing thrust. Emissions measurements were also conducted during an advected plume study where over 300 exhaust plumes generated by a broad mix of commercial transports were sampled 100-350 m downwind from aircraft operational runways during normal airport operations. The range of values measured at take-off for the different engine types in terms of PM number-based emission index was between 7 × 1015-9 × 1017 particles/kg fuel burned, and that for PM mass-based emission index was 0.1-0.6 g/kg fuel burned. PM characteristics of aircraft engine specific exhaust were found to evolve over time as the exhaust plume expands, dilutes with ambient air, and cools. The data from these measurements will enhance the emissions inventory development for a subset of engines operating in the commercial fleet and improve/validate current environmental impact predictive tools with real world aircraft engine specific PM emissions inputs.

  12. Investigation Into the Use of Satellite Data in Aiding Characterization of Particulate Air Quality in the Atlanta, Georgia Metropolitan Area

    Science.gov (United States)

    Alston, Erica J.; Sokolik, Irina, N.; Doddridge, Bruce G.

    2011-01-01

    Poor air quality episodes occur often in metropolitan Atlanta, Georgia. The primary focus of this research is to assess the capability of satellites as a tool in characterizing air quality in Atlanta. Results indicate that intra-city PM2.5 concentrations show similar patterns as other U.S. urban areas, with the highest concentrations occurring within the city. Both PM2.5 and MODIS AOD show more increases in the summer than spring, yet MODIS AOD doubles in the summer unlike PM2.5. A majority of OMI AI is below 0.5. Using this value as an ambient measure of carbonaceous aerosols in the urban area, aerosol transport events can be identified. Our results indicate that MODIS AOD is well correlated with PM2.5 on a yearly and seasonal basis with correlation coefficients as high as 0.8 for Terra and 0.7 for Aqua. A possible alternative view of the PM2.5 and AOD relationship is seen through the use of AOD thresholds. These probabilistic thresholds provide a means to describe the AQI through the use of past AOD for a specific area. We use the NAAQS to classify the AOD into different AQI codes, and probabilistically determine thresholds of AOD that represent the majority of a specific AQI category. For example, the majority 80% of moderate AQI days have AOD values between 0.5 - 0.6. The development of thresholds could be a tool used to evaluate air quality from the use of satellites in regions where there are sparse ground-based measurements of PM2.5.

  13. ASSOCIATIONS BETWEEN OUTDOOR PARTICULATE (PM2.5) CONCENTRATIONS AND GASEOUS CO-POLLUTANT EXPOSURE LEVELS FOR COPD AND MI COHORTS IN ATLANTA, GA

    Science.gov (United States)

    Epidemiological studies indicate that daily ambient particulate matter (PM2.5) concentrations are associated with increased mortality, hospital admissions, and respiratory and cardiovascular effects. It is possible that the observed significant associations are the result of c...

  14. Gas-solid flows - 1986; Proceedings of the Fourth Fluid Mechanics, Plasma Dynamics, and Lasers Conference, Atlanta, GA, May 11-14, 1986

    Science.gov (United States)

    Jurewicz, J. T.

    Papers are presented on deposition and resuspension of gas-borne particles in recirculating turbulent flows, particle dispersion in decaying isotropic homogeneous turbulence, turbulent dispersion of droplets for air flow in a pipe, a comparison between Lagrangian and Eulerian model approaches to turbulent particle dispersion, and the effect of turbulent electrohydrodynamics on electrostatic precipitator efficiency. Also considered are errors due to turbidity in particle sizing using laser Doppler velocimetry, particle motion in a fluidically oscillating jet, high pressure steam/water jet measurements using a portable particle sizing laser Doppler system, the effect of particle shape on pressure drop in a turbulent gas/solid suspension, and the experimental study of gas solid flows in pneumatic conveying. Other topics include entropy production and pressure loss in gas-solid flows, a computational study of turbulent gas-particle flow in a Venturi, a numerical analysis of confined recirculating gas-solid turbulent flows, nozzle and free jet flows of gas particle mixtures, and particle separation in pulsed airflow. Papers are also presented on sampling of solid particles in clouds, particle motion near the inlet of a sampling probe, the effects of slot injection on blade erosion in direct coal-fueled gas turbines, bed diameter effects and incipient slugging in gas fluidized beds, and sedimentation of air fluidized fine graphite particles by methanol vapor.

  15. Smart structures and materials; Proceedings of the Symposium, 112th ASME Winter Annual Meeting, Atlanta, GA, Dec. 1-6, 1991

    Science.gov (United States)

    Haritos, George K.; Srinivasan, A. V.

    The present conference discusses modeling vibration control with piezoceramic actuators, a search-based model identification of smart-structure damage, shape perception via tactile probes, the thermomechanical properties of Niti-base shape memory alloys, and constitutive laws for pseudoelastic materials. Also discussed are applications of smart structures in the control of chaotic vibrations, a design methodology for piezoelectric actuators, applications of electrorheological fluids to remote positioning, vibration suppression using smart structures, and power control of wind turbine blades through structural design.

  16. Processing and manufacturing of composite materials; Proceedings of the Symposium, 112th ASME Winter Annual Meeting, Atlanta, GA, Dec. 1-6, 1991

    Science.gov (United States)

    Srivatsan, T. S.; Chandrashekhar, S.

    Papers are presented on the machining of fiber reinforced composites, the milling of continuous carbon fiber-reinforced epoxy, advances in composite machining with abrasive water jets, delamination in surface plies of graphite/epoxy caused by the edge-trimming process, and cryogenic machining of Kevlar composites. Consideration is given to a thermodynamic evaluation of ceramic-composite cutting tools for machining titanium, microstructural changes in carbon fibers during high-temperature processing, synthesis of particulate-reinforced metal matrix composites using spray techniques, and on-line monitoring of composite prepreg fabrication. Attention is also given to the effects of postannealing on fatigue behavior in PEEK and its short fiber-reinforced composites, the effect of fabrication parameters on void content for filament-wound composites, and the fabrication of a W-1 percent ThO2-reinforced Fe-25Cr-8Al-0.5Y superalloy matrix composite.

  17. GaN-based green laser diodes

    Science.gov (United States)

    Lingrong, Jiang; Jianping, Liu; Aiqin, Tian; Yang, Cheng; Zengcheng, Li; Liqun, Zhang; Shuming, Zhang; Deyao, Li; Ikeda, M.; Hui, Yang

    2016-11-01

    Recently, many groups have focused on the development of GaN-based green LDs to meet the demand for laser display. Great progresses have been achieved in the past few years even that many challenges exist. In this article, we analysis the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done. Project supported by the National Key Research and Development Progress of China (Nos. 2016YFB0401803, 2016YFB0402002), the National Natural Science Foundation of China (Nos. 61574160, 61334005), the Strategic Priority Research Program of the Chinese Academy of Science (No. XDA09020401), and the Science and Technology Support Project of Jiangsu Province (No. BE2013007).

  18. TMR study of GaMnAs/AlGaAs:Be/GaMnAs trilayers

    Science.gov (United States)

    Hagmann, Joseph; Liu, Xinyu; Dobrowolska, Malgorzata; Furdyna, Jacek; Yoo, Taehee; Khym, Sungwon; Lee, Sanghoon

    2011-03-01

    GaMnAs/GaAs:Be/GaMnAs trilayers have recently demonstrated antiferromagnetic (AFM) coupling between the two ferromagnetic (FM) layers, mediated by holes in the spacer layer. In this work, GaMnAs/ Al x Ga 1-x :Be/GaMnAs trilayer samples with varying Al concentrations were fabricated into magnetic tunnel junction (MTJ) devices with range of pillar diameters to measure tunneling magnetoresistance (TMR) under various conditions. SQUID measurements were use to measure the magnetization of the samples, including switching fields for parallel and antiparallel magnetization alignments of the FM layers. TMR was observed in the sample with Al 0.22 Ga 0.78 As:Be spacer, but was massively suppressed in the samples with lower Al content. The presence of holes in the spacer layer is shown to suppress TMR. This illustrates the difference in conditions for TMR and for AFM interlayer coupling. Supported by NSF Grant DMR-1005851 and OISE-1015458.

  19. Ultrathin films of polycrystalline MnGa alloy with perpendicular magnetic anisotropy

    Science.gov (United States)

    Ono, Atsuo; Suzuki, Kazuya Z.; Ranjbar, Reza; Sugihara, Atsushi; Mizukami, Shigemi

    2017-02-01

    Room temperature growth of textured polycrystalline films of MnGa alloys using a CoGa buffer layer on a thermally oxidized Si substrate is demonstrated. MnGa thin films with a thickness of 2 nm exhibit out-of-plane rectangular hysteresis loops. A small saturation magnetization of about 200 emu/cm3 and a large perpendicular magnetic anisotropy of up to 3–5 Merg/cm3 were achieved for 2- and 3-nm-thick MnGa ultrathin films; such values have never been reported before, and they provide a pathway for integration with conventional Si technology.

  20. 应变补偿InGaN/AlGaN超晶格改善近紫外LED性能%Near-UV LED photoelectric properties of strain-compensated InGaN/AlGaN superlattice layers

    Institute of Scientific and Technical Information of China (English)

    尹以安; 章勇; 范广涵; 李述体

    2015-01-01

    通过应变平衡理论设计出应变补偿的In0.1Ga0.9N/Al0.2Ga0.8N超晶格结构。为了验证该结构具有低的应变,实验生长了相应的样品,并通过双晶衍射(XRD)和拉曼(Raman)光谱实验证实其具有低应力。最后把该结构用于近紫外LED的两处构建,一是替代量子阱中的GaN垒层,二是作p型层的接触层。实验发现,该结构的应用不但可以减弱量子阱的Stark效应和抑制电子泄露,而且降低p型接触层的欧姆接触电阻。且发现不用电子阻挡层情况下,其输出功率、PL光谱和I-V特性等都得到极大改善。%The strain-compensated In0.1Ga0.9N/Al0.2Ga0.8N superlattice structure was designed by strain equilibrium theory. To verify the structure with low stress, p-InGaN/p-AlGaN superlattice lattice layers (SLs) with a strain-compensated structure was fabricated by epitaxial growth technology, and low stress in the structure was verified by double-crystal x-ray diffraction (XRD) and Raman spectroscopy (Raman). The experimental results show that the near-UV LEDs with strain-compensated In0.1Ga0.9N/Al0.2Ga0.8N SLs have higher emission power over their conventional counterparts with GaN barriers due to the mitigation of the quantum-confined Stark effect and the suppression of electron leakage. Furthermore, the performances of the near-UV LEDs with proposed InGaN/AlGaN barriers can be further improved without electron blocking layers.

  1. Characteristics of cylindrical surrounding-gate GaAs x Sb1-x /In y Ga1-y As heterojunction tunneling field-effect transistors

    Science.gov (United States)

    Guan, Yun-He; Li, Zun-Chao; Luo, Dong-Xu; Meng, Qing-Zhi; Zhang, Ye-Fei

    2016-10-01

    A III-V heterojunction tunneling field-effect transistor (TFET) can enhance the on-state current effectively, and GaAs x Sb1-x /In y Ga1-y As heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition. In this paper, the performance of the cylindrical surrounding-gate GaAs x Sb1-x /In y Ga1-y As heterojunction TFET with gate-drain underlap is investigated by numerical simulation. We validate that reducing drain doping concentration and increasing gate-drain underlap could be effective ways to reduce the off-state current and subthreshold swing (SS), while increasing source doping concentration and adjusting the composition of GaAs x Sb1-x /In y Ga1-y As can improve the on-state current. In addition, the resonant TFET based on GaAs x Sb1-x /In y Ga1-y As is also studied, and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current, respectively, and is much superior to the conventional TFET. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176038 and 61474093), the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015A010103002), and the Technology Development Program of Shaanxi Province, China (Grant No. 2016GY-075).

  2. Environments of Ga in MFI-type Ga-silicates and their catalytic performance; MFI gata Ga-silicate chu no Ga no sonzai jotai to shokubai seino

    Energy Technology Data Exchange (ETDEWEB)

    Nagata, H.; Takiyama, Y.; Higashida, K.; Otsuka, S.; Kishida, M.; Wakabayashi, K. [Kyushu University, Fukuoka (Japan); Shoji, H. [Maruzen Petrochemical Co. Ltd., Chiba (Japan)

    1998-07-01

    MFI-type Ga-silicates (GaS) of varying atomic Si/Ga ratio are synthesized from the gel stocks, to compare them one another for their properties and C4H10 conversion performance. GaS (M) synthesized by the Mobil method shows a broader Ga-MASNMR spectral peak relevant to the GaO4 tetrahedron and lower unit cell increase rate, when it contains a high proportion of Ga, than GaS (A) synthesized by the alkoxide method. It is therefore considered that GaS (M) has an increased content of the GaO4 tetrahedron of low symmetry, as Ga content increases. GaS (M) loses a larger quantity of Ga eluted out as a result of HCl treatment than GaS (A), indicating that the former contains the GaO4 tetrahedron of low symmetry under a less stable condition. GaS (M) gives a higher aromatic hydrocarbon yield in the C4H10 conversion than GaS (A), as its Ga content increases. This results from difference between their dehydrogenation performances, indicating that Ga in the GaO4 tetrahedron of lower symmetry has a higher dehydrogenation performance. 19 refs., 6 figs., 3 tabs.

  3. Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengths

    Science.gov (United States)

    Pardo, D.; Grajal, J.

    2015-11-01

    This work presents an analysis of the capabilities of GaN Schottky diodes for frequency multipliers and mixers at millimeter wavelengths. By using a Monte Carlo (MC) model of the diode coupled to a harmonic balance technique, the electrical and noise performances of these circuits are investigated. Despite the lower electron mobility of GaN compared to GaAs, multipliers based on GaN Schottky diodes can be competitive in the first stages of multiplier chains, due to the excellent power handling capabilities of this material. The performance of these circuits can be improved by taking advantage of the lateral Schottky diode structures based on AlGaN/GaN HEMT technology.

  4. One-step graphene coating of heteroepitaxial GaN films.

    Science.gov (United States)

    Choi, Jae-Kyung; Huh, Jae-Hoon; Kim, Sung-Dae; Moon, Daeyoung; Yoon, Duhee; Joo, Kisu; Kwak, Jinsung; Chu, Jae Hwan; Kim, Sung Youb; Park, Kibog; Kim, Young-Woon; Yoon, Euijoon; Cheong, Hyeonsik; Kwon, Soon-Yong

    2012-11-02

    Today, state-of-the-art III-Ns technology has been focused on the growth of c-plane nitrides by metal-organic chemical vapor deposition (MOCVD) using a conventional two-step growth process. Here we show that the use of graphene as a coating layer allows the one-step growth of heteroepitaxial GaN films on sapphire in a MOCVD reactor, simplifying the GaN growth process. It is found that the graphene coating improves the wetting between GaN and sapphire, and, with as little as ~0.6 nm of graphene coating, the overgrown GaN layer on sapphire becomes continuous and flat. With increasing thickness of the graphene coating, the structural and optical properties of one-step grown GaN films gradually transition towards those of GaN films grown by a conventional two-step growth method. The InGaN/GaN multiple quantum well structure grown on a GaN/graphene/sapphire heterosystem shows a high internal quantum efficiency, allowing the use of one-step grown GaN films as 'pseudo-substrates' in optoelectronic devices. The introduction of graphene as a coating layer provides an atomic playground for metal adatoms and simplifies the III-Ns growth process, making it potentially very useful as a means to grow other heteroepitaxial films on arbitrary substrates with lattice and thermal mismatch.

  5. Source apportionment of submicron organic aerosol collected from Atlanta, Georgia, during 2014-2015 using the aerosol chemical speciation monitor (ACSM)

    Science.gov (United States)

    Rattanavaraha, Weruka; Canagaratna, Manjula R.; Budisulistiorini, Sri Hapsari; Croteau, Philip L.; Baumann, Karsten; Canonaco, Francesco; Prevot, Andre S. H.; Edgerton, Eric S.; Zhang, Zhenfa; Jayne, John T.; Worsnop, Douglas R.; Gold, Avram; Shaw, Stephanie L.; Surratt, Jason D.

    2017-10-01

    The Aerodyne Aerosol Chemical Speciation Monitor (ACSM) was redeployed at the Jefferson Street (JST) site in downtown Atlanta, Georgia (GA) for 1 year (March 20, 2014-February 08, 2015) to chemically characterize non-refractory submicron particulate matter (NR-PM1) in near real-time and to assess whether organic aerosol (OA) types and amounts change from year-to-year. Submicron organic aerosol (OA) mass spectra were analyzed by season using multilinear engine (ME-2) to apportion OA subtypes to potential sources and chemical processes. A suite of real-time collocated measurements from the Southeastern Aerosol Research and Characterization (SEARCH) network was compared with ME-2 factor solutions to aid in the interpretation of OA subtypes during each season. OA tracers measured from high-volume filter samples using gas chromatography interfaced with electron ionization-mass spectrometry (GC/EI-MS) also aided in identifying OA sources. The initial application of ME-2 to the yearlong ACSM dataset revealed that OA source apportionment by season was required to better resolve sporadic OA types. Spring and fall OA mass spectral datasets were separated into finer periods to capture potential OA sources resulting from non-homogeneous emissions during transitioning periods. NR-PM1 was highest in summer (16.7 ± 8.4 μg m-3) and lowest in winter (8.0 ± 5.7 μg m-3), consistent with prior studies. OA dominated NR-PM1 mass (56-74% on average) in all seasons. Hydrocarbon-like OA (HOA) from primary emissions was observed in all seasons, averaging 5-22% of total OA mass. Strong correlations of HOA with carbon monoxide (CO) (R = 0.71-0.88) and oxides of nitrogen (NOx) (R = 0.55-0.79) indicated that vehicular traffic was the likely source. Biomass burning OA (BBOA) was observed in all seasons, with lower contributions (2%) in summer and higher in colder seasons (averaging 8-20% of total OA mass). BBOA correlated strongly with levoglucosan (R = 0.78-0.95) during colder seasons

  6. Contactless electroreflectance study of a GaAIAs/lnGaAs/ GaAs/GaAIAs step quantum well structure

    Science.gov (United States)

    Moneger, S.; Qiang, H.; Pollak, Fred H.; Noble, T. F.

    1995-10-01

    Using contactless electroreflectance at 300 and 77K, we have studied the inter-subband transitions from a GaAlAs/InGaAs/GaAs/GaALAs step quantum well structure (small well inside a large well) consisting of two layers A (InxGa1-xAs) and B (GaAs) with widths LA and LB, respectively, bounded by two thick barrier regions of Gax AlyAs. By comparison of the observed spectral features with an envelope function calculation, including the effects of strain, we have been able to characterize the potential profile of the structure, i.e., LA, LB, x, and y. There is very good agreement between experiment and the intended materials param-eters. Such configurations are of considerable importance since (a) they form the basis for pseudomorphic high electron mobility transistors, and (b) also have applications in optoelectronics due to their large Stark shifts.

  7. Temperature Dependent Thermal Conductivity and Elastic Properties of a-InGaZnO4 and a-In2Ga2ZnO7 Thin Films

    Science.gov (United States)

    Thompson, W. D.; White, B. E.

    2016-10-01

    Amorphous In-Ga-Zn-O is an important oxide semiconductor in advanced display technologies. Despite its importance, little has been reported on the thermal and elastic properties of this material. Here, the temperature dependence of the thermal conductivity, shear modulus, and internal friction of a-InGaZnO4 and a-In2Ga2ZnO7 films are presented. The thermal conductivity of a-In2Ga2ZnO7, measured from 100 K to room temperature, was found to be larger than that of a-InGaZnO4 over the entire temperature range. At room temperature the thermal conductivities were 1.9 W/m K and 1.4 W/m K for the a-In2Ga2ZnO7 and a-InGaZnO4 films, respectively. The shear modulus and internal friction of these films were measured in the temperature range of 340 mK to 65 K. At 4.2 K the shear modulus of the a-InGaZnO4 and a-In2 Ga2ZnO7 films was 44 GPa and 42 GPa, respectively. The internal friction of thin films at each composition exhibited a temperature dependence and magnitude that is in agreement with that observed in all amorphous solids. As the self-heating effect is of concern in the development of amorphous In-Ga-Zn-O based thin film transistors on low thermal conductivity substrates, a thermal model of such a device utilizing a-In2Ga2ZnO7 or a-InGaZnO4 as the active layer was explored. It was found that the temperature increase of the thin film transistor channel is essentially independent of the thermal conductivity of the active layer.

  8. AlGaN/GaN HEMT器件工艺的研究进展%Research Progress on the Process of AlGaN/GaN HEMTs

    Institute of Scientific and Technical Information of China (English)

    颜伟; 韩伟华; 张仁平; 杜彦东; 杨富华

    2011-01-01

    首先论述了AlGaN/GaN高电子迁移率晶体管(HEMT)在微波大功率领域的应用优势和潜力;其次,介绍并分析了影响AlGaN/GaN HEMT性能的主要参数,分析表明要提高AI-GaN/GaN HEMT的频率和功率性能,需改善寄生电阻、电容、栅长和击穿电压等参数.然后,着重从材料结构和器件工艺的角度阐述了近年来AlGaN/GaN HEMT的研究进展,详细归纳了目前主要的材料生长和器件制作工艺,可以看出基本的工艺思路是尽量提高材料二维电子气的浓度和材料对二维电子气的限制能力的同时减小器件的寄生电容和电阻,增强栅极对沟道的控制能力.另外,根据具体情况调节栅长及沟道电场.最后,简要探讨了AlGaN/GaN HEMT还存在的问题以及面临的挑战.%The application advantages and the great potential of AlGaN/GaN high electron mobility transistors (HEMTs) in the high power microwave field are introduced firstly. The major parameters affecting the performance of the AlGaN/GaN HEMT are analyzed, from which it can be seen that the main parameters, such as the parasitic resistance, parasitic capacitance, gate length, breakdown voltage and other parameters, must be enhanced in order to improve the performance of the device. And then the latest research progress on the process of AlGaN/GaN HEMTs is reviewed in detail with focus on material structures and device technologies, and the major material growth and device fabrication technology are summed up comprehensively. The discussion indicates that the basic idea of the fabrication is increasing the density of the twodimensional electron gas (2DEG) and the limiting capability of the material on the 2DEG as far as possible, meanwhile, trying to reduce the parasitic resistance and parasitic capacitance, and enhance the control capability of the gate over the channel. In addition, the gate length and channel electric field are adjusted according to the specific circumstances. Finally, the

  9. Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip

    Science.gov (United States)

    Li-Shu, Wu; Yan, Zhao; Hong-Chang, Shen; You-Tao, Zhang; Tang-Sheng, Chen

    2016-06-01

    In this work, we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of GaAs pseudomorphic high electron mobility transistors (pHEMTs) and Si complementary metal-oxide semiconductor (CMOS) on the same Silicon substrate. GaAs pHEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique, and the best alignment accuracy of 5 μm is obtained. As a circuit example, a wide band GaAs digital controlled switch is fabricated, which features the technologies of a digital control circuit in Si CMOS and a switch circuit in GaAs pHEMT, 15% smaller than the area of normal GaAs and Si CMOS circuits.

  10. Microwave-supported preparation of (68)Ga bioconjugates with high specific radioactivity.

    Science.gov (United States)

    Velikyan, I; Beyer, G J; Långström, B

    2004-01-01

    The generator-produced positron-emitting (68)Ga (T(1/2) = 68 min) is of potential interest for clinical PET. (68)Ga as a metallic cation is suitable for complexation reactions with chelators, naked or conjugated, with peptides or other macromolecules. Large (68)Ga generator eluate volumes, metal traces from the generator column material, or reaction reagents, however, disturb a fast, reliable, and quantitative labeling procedure. In this paper we describe a simple technique, based on anion exchange, aiming first, to increase the (68)Ga concentration, second to purify it from competing impurities, and third to obtain a fast and quantitative (68)Ga-labeled peptide conjugate that can be applied in humans without further purification. Within 5 min one can obtain from the original 6 mL generator eluate a 200 microL (68)Ga preparation (volume reduction by a factor 30) that is suitable for direct and quantitative labeling of peptide conjugates. DOTATOC (DOTA-D-Phe(1)-Tyr(3)-octreotide, DOTA = 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid) was used as a test tracer for comparing the labeling properties of the different (68)Ga preparations. In combination with microwave heating, peptide conjugates of 0.5-1 nmol quantities could be labeled within 10 min with the full (68)Ga activity of a generator. Further purification of the (68)Ga-labeled peptide conjugate was no longer required since the nuclide incorporation was quantitative. The specific radioactivity (with respect to the peptide) was improved by a factor approximately 100 compared to the previously applied techniques using the original generator eluate. The commercial (68)Ge/(68)Ga generator from Obninsk in combination with this system for purification and concentration with an integrated microwave-supported labeling technology resulted in a kitlike technology for (68)Ga-tracer production. The first automated prototype using this technology is being tested.

  11. Si上GaN研究

    Institute of Scientific and Technical Information of China (English)

    陈裕权

    2004-01-01

    <正> 亚琛电磁研究所订购了一台Aixtron公司的AIX200/4 RF—S设备。这台设备将用来研究基于Si衬底的GaN淀积。预计低成本的Si衬底与GaN结构相结合会大大影响未来高功率RF器件的价格。亚琛电磁研究所将用AIX 200/4 RF—S设备淀积高品质的AlGaN/GaN层和器件

  12. Studies on GaN-based laser devices make progress

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    @@ A research team led by YANG Hui and CHEN Lianghui with the CAS Institute of Semiconductors (ISCAS) has made breakthrough progress in addressing key technological problems for the GaN-based laser diodes development. The research results were spoken highly at a panel meeting of experts held on 26 November, 2007 in Beijing.

  13. High efficiency DC-DC converter using GaN transistors

    Science.gov (United States)

    Tómaş, Cosmin-Andrei; Grecu, Cristian; Pantazicǎ, Mihaela; Marghescu, Ion

    2015-02-01

    The paper presents a new high-efficiency power switching supply using the Gallium Nitride (GaN) technology. There are compared two solutions, the first using standard MOS transistors and the second using the new GaN transistor. The actual green technologies for obtaining the maximum energy and minimum losses have pushed the semiconductor industry into a continuous research regarding high power and high frequency devices, having uses in both digital communications and switching power supplies.

  14. Impact of GaNAs strain compensation layer on the electronic structure of InAs/GaAs quantum dots

    Institute of Scientific and Technical Information of China (English)

    Song Xin; Feng Hao; Liu Yu-Min; Yu Zhong-Yuan; Liu Jian-Tao

    2013-01-01

    The strain and electron energy levels of lnAs/GaAs(001) quantum dots (QDs) with a GaNAs strain compensation layer (SCL) are investigated.The results show that both the hydrostatic and biaxial strain inside the QDs with a GaNAs SCL are reduced compared with those with GaAs capping layers.Moreover,most of the compressive strain in the growth surface is compensated by the tensile strain of the GaNAs SCL,which implies that the influence of the strain environment of underlying QDs upon the next-layer QDs' growth surface is weak and suggests that the homogeneity and density of QDs can be improved.Our results are consistent with the published experimental literature.A GaNAs SCL is shown to influence the strain and band edge.As is known,the strain and the band offset affect the electronic structure,which shows that the SCL is proved to be useful to tailor the emission wavelength of QDs.Our research helps to better understand how the strain compensation technology can be applied to the growth of stacked QDs,which are useful in solar cells and laser devices.

  15. Influence of GaInP ordering on the performance of GaInP solar cells

    Science.gov (United States)

    Shuzhen, Yu; Jianrong, Dong; Yongming, Zhao; Yurun, Sun; Kuilong, Li; Xulu, Zeng; Hui, Yang

    2016-07-01

    CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room temperature and low-temperature photoluminescence (PL) spectra of AlGaInP/GaInP/AlGaInP double heterostructures (DHs) reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance. Project supported by the National Natural Science Foundation of China (No. 61376065) and the Suzhou Science and Technology Project (No. ZXG2013044).

  16. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  17. New Decay Studies of 66Ga

    Science.gov (United States)

    Kumar, Suresh; Ahmad, I.; Carpenter, M. P.; Chen, J.; Greene, J. P.; Kondev, F. G.; Zhu, S.

    2014-03-01

    High-energy γ rays with energies up to 5.0 MeV are emitted in the radioactive decay of 66Ga (T1/2 = 9.49 h). Thus, this radionuclide appears to be a suitable candidate for energy and efficiency calibrations of high-resolution, γ-ray spectrometers that are employed in studies of very neutron-rich nuclei which have large Qβ values. In addition, accurate emission probabilities of this isotope are of interest to medical imaging applications, owing to the existence of large β+ decay branches, which need to be characterized with better accuracy. Decay studies of 66Ga were initiated using the γ-ray spectroscopy technique. The source was produced by means of the 66Zn(p,n) reaction at a beam energy of 12 MeV. Singles and γ - γ coincidences measurements were carried out using a single Ge detector and Gammasphere, respectively. The previously known 66Ga decay scheme was extended and many new γ rays were placed in the daughter nuclide 66Zn. The work at ANL was supported by the U.S. Department of Energy, Office of Nuclear Physics, under Contract No. DE-AC02-06CH11357. S. Kumar acknowledges support from the Indo-US Science and Technology Forum for the award of a Research Fellowship.

  18. Biennial Conference on Chemical Education, Abstracts (11th, Atlanta, Georgia, August 5-9, 1990).

    Science.gov (United States)

    Mellon, E. K.; Pulliam, E. J.

    This publication includes more than 470 abstracts of papers scheduled to be presented at a chemical education conference. Topics of the papers include: (1) human impact on the environment; (2) technology; (3) forensic science; (4) paper chemistry; (5) computer interfacing, software, videodisc and graphics; (6) faculty enhancement programs; (7)…

  19. The Value of Optimization in Dynamic Ride-Sharing: a Simulation Study in Metro Atlanta

    NARCIS (Netherlands)

    N.A.H. Agatz (Niels); A. Erera (Alan); M.W.P. Savelsbergh (Martin); X. Wang (Xing)

    2010-01-01

    textabstractSmartphone technology enables dynamic ride-sharing systems that bring together people with similar itineraries and time schedules to share rides on short-notice. This paper considers the problem of matching drivers and riders in this dynamic setting. We develop optimization-based approac

  20. Software Life Cycle Management Workshop (2nd) August 21-22, 1978, Atlanta, Georgia.

    Science.gov (United States)

    1978-08-01

    divine discontent. comparably sized non-software project. Software implementation needs a capital base for estab- c) Within a matrix organization the... Psycology of Computer Programming rush for survival in the technology jungle. New York: Van Nostrand Reinhold, 1971 For the past few years, since IBM

  1. Robust AlGaN/GaN MMIC Receiver Components

    NARCIS (Netherlands)

    Heijningen, M. van; Janssen, J.P.B.; Vliet, F.E. van

    2009-01-01

    Apart from delivering very high output powers, GaN can also be used to realize robust receiver components, such as Low Noise Amplifiersand Switches. This paper presents the designand measurement results of two GaN X-band switch and LNA MMICs, designed for integration in a radar front end. The switch

  2. Antisites and anisotropic diffusion in GaAs and GaSb

    KAUST Repository

    Tahini, H. A.

    2013-10-02

    The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate.

  3. Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications

    NARCIS (Netherlands)

    Suijker, E.M.; Rodenburg, M.; Hoogland, J.A.; Heijningen, M. van; Seelmann-Eggebert, M.; Quay, R.; Brückner, P.; Vliet, F.E. van

    2009-01-01

    The high power capabilities in combination with the low noise performance of Gallium Nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are reali

  4. A Flip-Chip AlGaInP LED with GaN/Sapphire Transparent Substrate Fabricated by Direct Wafer Bonding

    Institute of Scientific and Technical Information of China (English)

    LIANG Ting; GUO Xia; GUAN Bao-Lu; GUO Jing; GU Xiao-Ling; LIN Qiao-Ming; SHEN Guang-Di

    2007-01-01

    A red-light AlGaInP light emitting diode(LED)is fabricated by,using direct wafer bonding technology.Taking N-GaN wafer as the transparent substrate,the red-light LED is flip-chiped onto a structured silicon submount.Electronic luminance(EL)test reveals that the luminance flux is 130% higher than that of the conventional LED made from the same LED wafer.Current-voltage(Ⅰ-Ⅴ)measurement indicates that the bonding processes do not impact the electrical property of AlGaInP LED in the small voltage region (V<1.5V).In the large voltage region (V>1.5 V),the Ⅰ-Ⅴ characteristic exhibits space-charge-limited currents characteristic due to the p-GaAs/n-GaN bonding interface.

  5. Spatial and temporal variability in nutrient concentrations in surface waters of the Chattahoochee River basin near Atlanta, Georgia, USA

    Science.gov (United States)

    Peters, N.E.; Buell, G.R.; Frick, E.A.

    1997-01-01

    Nutrient concentrations from the early 1970s through 1995 were evaluated at several sites along the Chattahoochee River and its tributaries near Atlanta, to determine general patterns and processes controlling nutrient concentrations in the river. A spatial analysis was conducted on data collected in 1994 and 1995 from an intensive nutrient study of the Chattahoochee River and its tributaries by the Georgia Department of Natural Resources, Environmental Protection Division. The 1994-1995 data show step increases in ammonium (NH4-N), nitrite plus nitrate (NO2 + NO3-N), and total-phosphorus (Tot-P) concentrations in the river. The step increases occur downstream of two wastewater treatment facilities (WWTFs) and Peachtree Creek, a small tributary inflow with degraded water quality draining a predominantly urban and industrial area. Median NO2 + NO3-N and Tot-P concentrations in the mainstem increase downstream of these inputs from 0.5 to 1 mg 1-1 and from 0.04 to 0.13 mg 1-1, respectively. NH4-N concentrations were typically low with 95% of the 2575 observations less than 0.2 mg 1-1 throughout the river system, except some high values (>1 mg 1-1) in some tributaries, particularly near the central part of Atlanta. High NH4-N concentrations are attributed to sewage discharge as they also are associated with high biological oxygen demand and faecal coliform bacteria concentrations. Nutrient concentrations vary temporally. An assessment of four sites, two mainstem and two tributaries, from 1970 to 1995 indicates a progressive increase and variability in NO2 + NO3-N concentrations during the period. The progressive increase in NO2 + NO3-N concentrations and their variability is similar to that reported for surface waters throughout the world and for which increased fertilizer usage has been attributed. Tot-P concentrations increase at mainstem sites through the middle to late 1980s and decrease markedly thereafter, due to improvements to WWTFs and a 1990 phosphate

  6. DLTS measurements on GaSb/GaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Hoegner, Annika; Nowozin, Tobias; Marent, Andreas; Bimberg, Dieter [Institut fuer Festkoerperphysik, TU Berlin (Germany); Tseng, Chi-Che [Institute of Photonics Technologies, NTHU (China); Lin, Shih-Yen [Institute of Optoelectronic Sciences, NTOU (China)

    2010-07-01

    Memory devices based on hole storage in self-organized quantum dots offer significant advantages with respect to storage time and scalability. Recently, we demonstrated a first prototype based on InAs/GaAs quantum dots at low temperatures. To enable feasible storage times at room temperature the localisation energy of the quantum dots has to be increased by using other material systems. A first step in this direction is the use of GaSb quantum dots within a GaAs matrix. We have characterized self-organized GaSb/GaAs quantum dots embedded into a n{sup +}p-diode structure. DLTS measurements on hole emission were conducted and yield a strong peak from which a mean emission energy of about 400 meV can be extracted. The reference sample without the quantum dots (containing only the wetting layer) shows no such peak.

  7. Growth and Optimization of 2 Micrometers InGaSb/AlGaSb Quantum-Well-Based VECSELs on GaAs/AlGaAs DBRs

    Science.gov (United States)

    2013-08-01

    optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/ AlGaAs distributed Bragg...cross-sectional transmission electron microscopy. The optical properties of the III-Sb active regions are characterized by time-resolved... optically pumped vertical- external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/ AlGaAs distri- buted Bragg

  8. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    He, Xiaoguang; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-06-15

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  9. Effect of the restricted use of phosphate detergent and upgraded wastewater-treatment facilities of water quality in the Chattahoochee River near Atlanta, Georgia

    Science.gov (United States)

    Wangsness, D.J.; Frick, E.A.; Buell, G.R.; DeVivo, J.C.

    1994-01-01

    Data compiled for the six largest waste-water treatment facilities in Metropolitan Atlanta, Georgia, indicate about an 83-percent reduction in the phosphorus load discharged to the Chattahoochee River from 1988 to 1993 because of restricted use of phosphate detergents and upgraded treatment of municipal wastewater. This reduction resulted in about a 54-percent decrease in the phosphorus load in the Chattahoochee River downstream of Atlanta during this time period. Phosphorus loads in animal manure and fertilizers applied to the land (nonpoint sources) are greater than loads discharged to the Chattahoochee River from wastewater-treatment facilities (point sources). However, only a fraction of the phosphorus applied to the land enters the surface waters and is bioavailable. Even though nonpoint sources of land applied phosphorus potentially are important sources to surface waters, point-source inputs from wastewater effluent are far greater. Phosphorus concentrations in wastewater effluent from three cities of Atlanta waste-water treatment facilities need to be reduced by about an additional 31 percent by 1996 to comply with Georgia Department of Natural Resources Environmental Protection Division regulations.

  10. Ivestigation of an InGaN - GaN nanowire heterstructure

    Energy Technology Data Exchange (ETDEWEB)

    Limbach, Friederich; Gotschke, Tobias; Stoica, Toma; Calarco, Raffaella; Gruetzmacher, Detlev [Institute of Bio- and Nanosystems (IBN-1), Research Center Juelich GmbH, Juelich (Germany); JARA-Fundamentals of Future Information Technology, Juelich (Germany); Sutter, Eli; Ciston, Jim [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY (United States); Cusco, Ramon; Artus, Luis [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Barcelona, Catalonia (Spain); Kremling, Stefan; Hoefling, Sven; Worschech, Lukas [University Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wuerzburg (Germany)

    2011-07-01

    InGaN/GaN nanowire (NW) heterostructures grown by molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multi-faceted InGaN cap wrapping the top part of the GaN NW. Transmission electron microscopy images taken from different parts of a InGaN/GaN nanowire show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it. Photoluminescence spectra of these heterostructure NW ensembles show an emission peak at 2.1 eV. However, {mu}-PL spectra measured on single nanowires reveal much sharper luminescence peaks. A Raman analysis reveals a variation of the In content between 20 % and 30 %, in agreement with PL and TEM investigations.

  11. Prostatic uptake of Ga-67

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, W.T.; Rosen, P.R.; Weiland, F.L.; Ritchey, M.L.

    1984-08-01

    Midline activity low in the pelvis seen on Ga-67 scans is frequently attributed to colonic excretion of radionuclide. Two cases of infectious prostatitis with focal uptake of Ga-67 within the prostate gland are described. A technique of using limited quantities of barium administered by enema and appropriate positional imaging, which localized pelvic activity to the prostate, is described.

  12. Development of methods for the purification of {sup 67}Ga and {sup 68}Ga for biomolecules labeling; Desenvolvimento de metodos de purificacao do {sup 67}Ga e {sup 68}Ga para a marcacao de biomoleculas

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Renata Ferreira

    2012-07-01

    For more than fifty years, the long-lived {sup 68}Ge/{sup 68}Ga generators have been in development, obtaining {sup 68}Ga without the need of having in house cyclotron, which is a considerable convenience for PET centers that have no nearby cyclotrons. {sup 68}Ga decays 89% by positron emission and low photon emission (1077 keV) and the physical half life of 67.7 minutes is compatible with the pharmacokinetics of low biomolecular weight substances like peptides and antibody fragments. Moreover, its established metallic chemistry allows it to be stably bound to the carrier peptide sequence via a suitable bifunctional chelator, such as DOTA. All these reasons together with the technology of PET/CT allowed advances in molecular imaging, in particular in the diagnosis of neuroendocrine diseases. However, the eluate from the commercial {sup 68}Ge/{sup 68}Ga generators still contains high levels of long lived {sup 68}Ge, besides other metallic impurities, which competes with {sup 68}Ga with a consequent reduction of the labeling yield of biomolecules, such as Fe{sup 3+} and Zn{sup 2+}. Thus, the lower the amount of impurities in the eluate, the competition between the radiolabeled and unlabeled peptide by the receptor will be smaller and the quality of imaging will be better, a subsequent purification step is needed after the generator elution. The aim of this work is to evaluate different purifications methods of {sup 68}Ga to label biomolecules, with emphasis on the study of the chemical impurities contained in the eluate and to develop a new purification method. Several purification methods were studied. Many cationic resin were tested simulating the commercial process. {sup 68}Ga is adsorbed in cationic resin, which is not commercial available and eluted in acid/acetone solution. The use of minor particles of cationic resin AG50W-X4 (200-400 mesh) showed the best results. An innovate method was the extraction chromatography, which is based on the absorption of

  13. GaN quantum dot polarity determination by X-ray photoelectron diffraction

    Science.gov (United States)

    Romanyuk, O.; Bartoš, I.; Brault, J.; Mierry, P. De; Paskova, T.; Jiříček, P.

    2016-12-01

    Growth of GaN quantum dots (QDs) on polar and semipolar GaN substrates is a promising technology for efficient nitride-based light emitting diodes (LED). The QDs crystal orientation typically repeats the polarity of the substrate. In case of non-polar or semipolar substrates, the polarity of QDs is not obvious. In this article, the polarity of GaN QDs and of underlying layers was investigated nondestructively by X-ray photoelectron diffraction (XPD). Polar and semipolar GaN/Al0.5Ga0.5N heterostructures were grown on the sapphire substrates with (0001) and (1 1 bar 00) orientations by molecular beam epitaxy (MBE). Polar angle dependence of N 1s core-level photoelectron intensities were measured from GaN QDs and compared with the corresponding experimental curves from free-standing GaN crystals. It is confirmed experimentally, that the crystalline orientation of polar (0001) GaN QDs follows the orientation of the (0001) sapphire substrate. In case of semipolar GaN QDs grown on (1 1 bar 00) sapphire substrate, the (11 2 bar 2) polarity of QDs was determined.

  14. InAlGaN/GaN HEMTs at Cryogenic Temperatures

    Directory of Open Access Journals (Sweden)

    Ezgi Dogmus

    2016-06-01

    Full Text Available We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm2·V−1·s−1 combined with a sheet carrier density of 1.93 × 1013 cm−2 leading to a remarkably low sheet resistance of 44 Ω/□ are measured at 4 K. A strong improvement of Direct current (DC and Radio frequency (RF characteristics is observed at low temperatures. The excellent current and power gain cutoff frequencies (fT/fmax of 65/180 GHz and 95/265 GHz at room temperature and 77 K, respectively, using a 0.12 μm technology confirmed the outstanding 2DEG properties.

  15. Proton implantation for the isolation of AlGaAs/GaAs quantum cascade lasers

    Science.gov (United States)

    Szerling, A.; Kosiel, K.; Kozubal, M.; Myśliwiec, M.; Jakieła, R.; Kuc, M.; Czyszanowski, T.; Kruszka, R.; Pągowska, K.; Karbownik, P.; Barcz, A.; Kamińska, E.; Piotrowska, A.

    2016-07-01

    The novel fabrication scheme of the mid-infrared (∼9.5 μm) Al0.45Ga0.55As/GaAs plasmon-enhanced-waveguide quantum cascade laser (QCL) is reported. The electric isolation was made exclusively by 6.5 μm-deep proton implantation. The applied implantation allowed us to suppress the current spreading and at the same time enabled the laser radiation confinement without any mesa formation. A galvanic gold layer at least 3.5 μm thick covering the top ohmic contact was used as a mask for implantation. This mask was not removed after the implantation, but it served for heat spreading from the laser. A considerable reduction in the necessary technological steps was obtained with the presented novel fabrication scheme, in comparison with the standard mesa-etching-based method.

  16. Single nanowire green InGaN/GaN light emitting diodes

    Science.gov (United States)

    Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

    2016-10-01

    Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

  17. Refined assessment of associations between drinking water residence time and emergency department visits for gastrointestinal illness in Metro Atlanta, Georgia.

    Science.gov (United States)

    Levy, Karen; Klein, Mitchel; Sarnat, Stefanie Ebelt; Panwhar, Samina; Huttinger, Alexandra; Tolbert, Paige; Moe, Christine

    2016-08-01

    Recent outbreak investigations suggest that a substantial proportion of waterborne disease outbreaks are attributable to water distribution system issues. In this analysis, we examine the relationship between modeled water residence time (WRT), a proxy for probability of microorganism intrusion into the distribution system, and emergency department visits for gastrointestinal (GI) illness for two water utilities in Metro Atlanta, USA during 1993-2004. We also examine the association between proximity to the nearest distribution system node, based on patients' residential address, and GI illness using logistic regression models. Comparing long (≥90th percentile) with intermediate WRTs (11th to 89th percentile), we observed a modestly increased risk for GI illness for Utility 1 (OR = 1.07, 95% CI: 1.02-1.13), which had substantially higher average WRT than Utility 2, for which we found no increased risk (OR = 0.98, 95% CI: 0.94-1.02). Examining finer, 12-hour increments of WRT, we found that exposures >48 h were associated with increased risk of GI illness, and exposures of >96 h had the strongest associations, although none of these associations was statistically significant. Our results suggest that utilities might consider reducing WRTs to water consumption.

  18. Growth of ZnO and GaN Films

    Science.gov (United States)

    Chang, J.; Hong, S.-K.; Matsumoto, K.; Tokunaga, H.; Tachibana, A.; Lee, S. W.; Cho, M.-W.

    . Zinc oxide (ZnO) and gallium nitride (GaN) are wide bandgap semi conductors applicable to light emitting diodes (LEDs) and laser diodes (LDs) with wavelengths ranging from ultraviolet to blue light. Now ZnO and GaN are key ma terials for optoelectronic device applications and their applications are being rapidly expanded to lots of other technology including electronics, biotechnology, nanotech-nology, and fusion technology among all these. As a fundamental starting point for the development of this new technique, epitaxy of ZnO and GaN films is one of the most important key technology. Hence, development of the growth technique for high quality epitaxial films is highly necessary. Among the various kinds of epi taxy technique for semiconductor films developed so far, physical vapor deposition (PVD)-based epitaxy technique has been revealed to be the appropriate way for the high quality ZnO film and related alloy growths, while chemical vapor deposition (CVD)-based epitaxy technique has been proved to be the best method for the high quality GaN film and related alloy growths.

  19. Radiation hardness of Ga0.5In0.5 P/GaAs tandem solar cells

    Science.gov (United States)

    Kurtz, Sarah R.; Olson, J. M.; Bertness, K. A.; Friedman, D. J.; Kibbler, A.; Cavicchi, B. T.; Krut, D. D.

    1991-01-01

    The radiation hardness of a two-junction monolithic Ga sub 0.5 In sub 0.5 P/GaAs cell with tunnel junction interconnect was investigated. Related single junction cells were also studied to identify the origins of the radiation losses. The optimal design of the cell is discussed. The air mass efficiency of an optimized tandem cell after irradiation with 10(exp 15) cm (-2) 1 MeV electrons is estimated to be 20 percent using currently available technology.

  20. Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

    Science.gov (United States)

    Sangaré, Paul; Ducournau, Guillaume; Grimbert, Bertrand; Brandli, Virginie; Faucher, Marc; Gaquière, Christophe; Íñiguez-de-la-Torre, Ana; Íñiguez-de-la-Torre, Ignacio; Millithaler, J. F.; Mateos, Javier; González, Tomas

    2013-01-01

    The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both types of devices have been measured and explained using Monte Carlo simulations and non linear analysis. Sensitivities up to 100 V/W are obtained at 0.3 THz with a 280 pW/Hz1/2 noise equivalent power.

  1. 基于 BP 和 SVM变量筛选的 LC 技术特征对项目绩效比较研究%Research on GA -BP with SVM for Coupling of Lean Construction Technology and Project Performance

    Institute of Scientific and Technical Information of China (English)

    李书全; 胡少培; 胡本哲

    2015-01-01

    In order to explore the internal mechanism between inquiry lean construction technology and project perform-ance,the paper constructs 7 kinds of lean construction technology such as the screening of BP and SVMvariables 6S,visu-al management,the last planner,and the coupling model consisting of comprehensive indexes and 5 project performance in-dexes such as knowledge ability,finance,owners.The simulation results show that:in the analysis of coupled model simu-lation technology characteristics of lean construction and project performance sub index,prediction model of GA -BP is higher than standard BP neural network model based on the analysis of precision;in the analysis of coupled model simula-tion comprehensive indicators of performance technology characteristics of lean construction and project,the predictive mod-el of SVMis higher than the precision of forecasting model GA -BP based on.In addition,using the BP and SVM com-bined with MIV algorithm,the paper further explores the influence of different lean construction techniques on each index and comprehensive index of project performance.Research results provide decision support for the project stakeholders to improve the performance of project management.%为探究精益建设技术与项目绩效之间的内在作用机理,构建基于 BP 和 SVM变量筛选的6S、可视化管理、最后计划者等7种精益建设技术与知识能力、财务、业主等5个项目绩效分项指标和综合指标的耦合模型。仿真结果表明:在精益建设技术特征与项目绩效分项指标的耦合模型仿真分析中,基于 GA -BP 的预测模型比标准 BP 神经网络模型精度要高;在精益建设技术特征与项目绩效综合指标的耦合模型仿真分析中,基于 SVM的预测模型比 GA -BP 的预测模型精度要高。另外,利用 BP 和 SVM结合 MIV 算法进一步探究不同精益建设技术对项目绩效各指标和综合指标的影响程度。研究结果为项

  2. Naval Science & Technology: Enabling the Future Force

    Science.gov (United States)

    2013-04-01

    Peer Competitors • Security of Global Commons (Cyber/Piracy) • Climate Change & Natural Disasters • Revised Defense Strategy, Re-Balance to Pacific... corn for disruptive technologies Laser Cooling Spintronics Bz 1st U.S. Intel satellite GRAB Semiconductors GaAs, GaN, SiC GPS

  3. 31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

    Directory of Open Access Journals (Sweden)

    Campesato Roberta

    2017-01-01

    Full Text Available We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE and metal-organic chemical vapour deposition (MOCVD processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide bottom junction grown on a GaAs (Gallium Arsenide substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.

  4. Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions

    Science.gov (United States)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Botchkarev, Andrei E.; Nelson, Nicole N.; Fahmi, M. M. E.; Griffin, James A.; Khan, Arif; Noor Mohammad, S.; Johnstone, D. K.; Bublik, V. T.; Chsherbatchev, K. D.; Voronova, M. I.

    2002-12-01

    Interface properties of dilute slightly lattice mismatched GaAsN/GaAs (0.35 at.% N) and closely lattice matched InGaAsN (1 at.% In, 0.35 at.% N) heterojunctions (HJs) were studied by means of capacitance-voltage profiling, deep levels transient spectroscopy (DLTS) and current-voltage measurements. It is found that the lattice matched HJs show no electrical breakdown when the space charge region crosses the interface. The carrier concentration profiles in such HJ show, as expected, the accumulation region on the low-bandgap side and the depletion region on the high-bandgap side of the HJ. This is not the case for the GaAsN/GaAs (GaAsN layer on top) and the GaAs/GaAsN (GaAs layer on top) HJ. The density of deep traps in GaAsN, InGaAsN films and in GaAs films grown on GaAsN underlayers was very much higher than in epitaxial GaAs films. The dominant deep centers were the EL6 and the EL3 electron traps. The interface regions of the GaAs/GaAsN and the InGaAsN/GaAs HJs were shown to be enriched by EL3 traps, while for the GaAsN/GaAs HJ those regions were enriched by EL6 traps which was associated with the former films being Ga-rich and thus facilitating incorporation of oxygen on As sites.

  5. Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.

    Science.gov (United States)

    Jia, Chuanyu; Yu, Tongjun; Lu, Huimin; Zhong, Cantao; Sun, Yongjian; Tong, Yuzhen; Zhang, Guoyi

    2013-04-08

    The performance of nitride-based LEDs was improved by inserting dual stage and step stage InGaN/GaN strain relief layer (SRL) between the active layer and n-GaN template. The influences of step stage InGaN/GaN SRL on the structure, electrical and optical characteristics of GaN-based LEDs were investigated. The analysis of strain effect on recombination rate based k·p method indicated 12.5% reduction of strain in InGaN/GaN MQWs by inserting SRL with step stage InGaN/GaN structures. The surface morphology was improved and a smaller blue shift in the electroluminescence (EL) spectral with increasing injection current was observed for LEDs with step stage SRL compared with conventional LEDs. The output power of LEDs operating at 20 mA was about 15.3 mW, increased by more than 108% by using step stage InGaN/GaN SRL, which shows great potential of such InGaN/GaN SRL in modulating InGaN/GaN MQWs optical properties based on its strain relief function.

  6. Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/AlGaAs Quantum-Well Laser

    Institute of Scientific and Technical Information of China (English)

    CAO Yu-Lian; CHEN Liang-Hui; LIAN Peng; MA Wen-Quan; WANG Qing; WU Xu-Ming; HE Guo-Rong; LI Hui; WANG Xiao-Dong; SONG Guo-Feng

    2006-01-01

    @@ We report on the use of very thin GaAsP insertion layers to improve the performance of an InGaAsP/InGaP/AlGaAs single quantum-well laser structure grown by metal organic chemical vapour deposition.

  7. GaInNAs laser gain

    Energy Technology Data Exchange (ETDEWEB)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  8. 78 FR 21239 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

    Science.gov (United States)

    2013-04-10

    ...) RWY 30, Amdt 1 Atlanta, GA, Hartsfield--Jackson Atlanta Intl, ILS OR LOC RWY 8L, ILS RWY 8L (SA CAT I), ILS RWY 8L (CAT II), ILS RWY 8L (CAT III), Amdt 4 Atlanta, GA, Hartsfield--Jackson Atlanta Intl, ILS OR LOC RWY 8R, Amdt 60 Atlanta, GA, Hartsfield--Jackson Atlanta Intl, ILS OR LOC RWY 9L, Amdt...

  9. Site-controlled growth of InP/GaInP quantum dots on GaAs substrates

    Science.gov (United States)

    Baumann, V.; Stumpf, F.; Steinl, T.; Forchel, A.; Schneider, C.; Höfling, S.; Kamp, M.

    2012-09-01

    A technology platform for the epitaxial growth of site-controlled InP quantum dots (QDs) on GaAs substrates is presented. Nanoholes are patterned in a GaInP layer on a GaAs substrate by electron beam lithography and dry chemical etching, serving as QD nucleation centers. The effects of a thermal treatment on the structured surfaces for deoxidation are investigated in detail. By regrowth on these surfaces, accurate QD positioning is obtained for square array arrangements with lattice periods of 1.25 μm along with a high suppression of interstitial island formation. The optical properties of these red-emitting QDs (λ ˜ 670 nm) are investigated by means of ensemble- and micro-photoluminescence spectroscopy at cryogenic temperatures.

  10. SWIR InGaAs focal plane arrays in France

    Science.gov (United States)

    Rouvié, A.; Huet, O.; Hamard, S.; Truffer, J. P.; Pozzi, M.; Decobert, J.; Costard, E.; Zécri, M.; Maillart, P.; Reibel, Y.; Pécheur, A.

    2013-06-01

    SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. The study of InGaAs FPA has begun few years ago with III-VLab, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has led to put quickly on the market a 320x256 InGaAs module. The recent transfer of imagery activities from III-VLab to Sofradir allows developing new high performances products, satisfying customers' new requirements. Especially, a 640x512 InGaAs module with a pitch of 15µm is actually under development to fill the needs of low light level imaging.

  11. Design and Analysis of a 34 dBm Ka-Band GaN High Power Amplifier MMIC

    NARCIS (Netherlands)

    Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.

    2006-01-01

    This paper presents the design and analysis issues related to the use of recent GaN technologies for realizing high power millimeter wave MMICs. Two GaN Ka-band amplifier MMICs have been designed, fabricated and characterized. The small-signal and power measurement results are presented for both amp

  12. Hydrogenation of GaSb/GaAs quantum rings

    Energy Technology Data Exchange (ETDEWEB)

    Hodgson, P. D., E-mail: pdhodgson@hotmail.co.uk; Hayne, M.; Zhuang, Q. D. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Ahmad Kamarudin, M. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Department of Physics, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Darul Ehsan (Malaysia); Birindelli, S.; Capizzi, M. [Dipartimento di Fisica, Sapienza Universita di Roma, Piazzale A. Moro 2, 00185 Roma (Italy)

    2014-08-25

    We present the results of photoluminescence measurements on hydrogenated type-II GaSb/GaAs quantum dot/ring (QD/QR) samples at temperatures ranging from 4.2 K to 400 K. Hydrogenation is found to suppress optically induced charge depletion (associated with the presence of carbon acceptors in this system). A redshift of the QD\\QR emission energy of a few tens of meV is observed at temperatures ≥300 K, consistent with a reduction in average occupancy by ∼1 hole. These effects are accompanied by a reduction in PL intensity post-hydrogenation. We conclude that although hydrogenation may have neutralized the carbon acceptors, multiple hole occupancy of type-II GaSb/GaAs QD/QRs is very likely a precondition for intense emission, which would make extending the wavelength significantly beyond 1300 nm at room temperature difficult.

  13. Activation processes on GaAs photocathode by different currents of oxygen source

    Science.gov (United States)

    Miao, Zhuang; Shi, Feng; Cheng, Hongchang; Wang, Shufei; Zhang, Xiaohui; Yuan, Yuan; Chen, Chang

    2015-04-01

    In order to know the influence of activation processes on GaAs photocathodes, three GaAs samples were activated by a fixed current of cesium source and different currents of oxygen source. The current of caesium source is same during activation to ensure initial adsorption of caesium quantum is similar, which is the base to show the difference during alternation activation of caesium and oxygen. Analysed with the activation data, it is indicated that Cs-to-O current ratio of 1.07 is the optimum ratio to obtain higher sensitivity and better stability. According to double dipole model, stable and uniform double dipole layers of GaAs-O-Cs:Cs-O-Cs are formed and negative electron affinity is achieved on GaAs surface by activation with cesium and oxygen. The analytical result is just coincident with the model. Thus there is an efficient technological method to improve sensitivity and stability of GaAs photocathode.

  14. N-polar GaN epitaxy and high electron mobility transistors

    Science.gov (United States)

    Hoi Wong, Man; Keller, Stacia; Nidhi; Dasgupta, Sansaptak; Denninghoff, Daniel J.; Kolluri, Seshadri; Brown, David F.; Lu, Jing; Fichtenbaum, Nicholas A.; Ahmadi, Elaheh; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

    2013-07-01

    This paper reviews the progress of N-polar (000\\mathop 1\\limits^\\_) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized.

  15. Overview and perspectives on automation strategies in (68)Ga radiopharmaceutical preparations.

    Science.gov (United States)

    Boschi, Stefano; Malizia, Claudio; Lodi, Filippo

    2013-01-01

    The renaissance of (68)Ga radiopharmacy has led to great advances in automation technology. The availability of a highly efficient, reliable, long-lived (68)Ge/(68)Ga generator system along with a well-established coordination chemistry based on bifunctional chelating agents have been the bases of this development in (68)Ga radiopharmacy. Syntheses of (68)Ga peptides were originally performed by manual or semiautomated systems, but increasing clinical demand, radioprotection, and regulatory issues have driven extensive automation of their production process. Several automated systems, based on different post-processing of the (68)Ga generator eluate, on different engineering, and on fixed tubing or disposable cassette approaches, have been developed and are discussed in this chapter. Since automatic systems for preparation of radiopharmaceuticals should comply with qualification and validation protocols established by regulations such as current Good Manufacturing Practices (cGMP) and local regulations, some regulatory issues and the more relevant qualification protocols are also discussed.

  16. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

    Science.gov (United States)

    Su, Ming; Chen, Chingchi; Rajan, Siddharth

    2013-07-01

    GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600-1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles.

  17. Insulated gate and surface passivation structures for GaN-based power transistors

    Science.gov (United States)

    Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu

    2016-10-01

    structures as well as different characterization methods, including our own photo-assisted C-V technique, essential for understanding and developing successful surface passivation and interface control schemes, are given in the subsequent section. Finally we highlight the important progress in GaN MIS interfaces that have recently pushed the frontier of nitride-based device technology.

  18. Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes.

    Science.gov (United States)

    Sadaf, S M; Ra, Y-H; Nguyen, H P T; Djavid, M; Mi, Z

    2015-10-14

    The current LED lighting technology relies on the use of a driver to convert alternating current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to inject positive charge carriers (holes) for blue light emission, and rare-earth doped phosphors to down-convert blue photons into green/red light, which have been identified as some of the major factors limiting the device efficiency, light quality, and cost. Here, we show that multiple-active region phosphor-free InGaN nanowire white LEDs connected through a polarization engineered tunnel junction can fundamentally address the afore-described challenges. Such a p-GaN contact-free LED offers the benefit of carrier regeneration, leading to enhanced light intensity and reduced efficiency droop. Moreover, through the monolithic integration of p-GaN up and p-GaN down nanowire LED structures on the same substrate, we have demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities (positive and negative) of applied voltage.

  19. A low-noise K-Ka band oscillator using AlGaAs/GaAs heterojunction bipolar transistors

    Science.gov (United States)

    Madihian, Mohammad; Takahashi, Hideki

    1991-01-01

    The design considerations, fabrication process, and performance of the first K-Ka-band oscillator implemented using a self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT) are described. A large-signal time-domain-based design approach has been used which applies a SPICE-F simulator for optimization of the oscillator circuit parameters for maximum output power. The oscillator employs a 2 x 10 sq mm emitter AlGaAs/GaAs HBT that was fabricated using a pattern inversion technology. The HBT has a base current 1/f noise power density lower than 1 x 10 to the -20th sq A/Hz at 1 kHz and lower than 1 x 10 to the -22nd sq A/Hz at 100 kHz for a collector current of 1 mA. The oscillator, which is composed of only low-Q microstrip transmission lines, has a phase noise of -80 dBc/Hz at 100 kHz off carrier when operated at 26.6 GHz. These results indicate the applicability of the HBTs to low-phase-noise monolithic oscillators at microwave and millimeter-wave frequencies, where both Si bipolar transistors and GaAs FETs are absent.

  20. Baseline Prevalence of Birth Defects Associated with Congenital Zika Virus Infection - Massachusetts, North Carolina, and Atlanta, Georgia, 2013-2014.

    Science.gov (United States)

    Cragan, Janet D; Mai, Cara T; Petersen, Emily E; Liberman, Rebecca F; Forestieri, Nina E; Stevens, Alissa C; Delaney, Augustina; Dawson, April L; Ellington, Sascha R; Shapiro-Mendoza, Carrie K; Dunn, Julie E; Higgins, Cathleen A; Meyer, Robert E; Williams, Tonya; Polen, Kara N D; Newsome, Kim; Reynolds, Megan; Isenburg, Jennifer; Gilboa, Suzanne M; Meaney-Delman, Dana M; Moore, Cynthia A; Boyle, Coleen A; Honein, Margaret A

    2017-03-03

    Zika virus infection during pregnancy can cause serious brain abnormalities, but the full range of adverse outcomes is unknown (1). To better understand the impact of birth defects resulting from Zika virus infection, the CDC surveillance case definition established in 2016 for birth defects potentially related to Zika virus infection* (2) was retrospectively applied to population-based birth defects surveillance data collected during 2013-2014 in three areas before the introduction of Zika virus (the pre-Zika years) into the World Health Organization's Region of the Americas (Americas) (3). These data, from Massachusetts (2013), North Carolina (2013), and Atlanta, Georgia (2013-2014), included 747 infants and fetuses with one or more of the birth defects meeting the case definition (pre-Zika prevalence = 2.86 per 1,000 live births). Brain abnormalities or microcephaly were the most frequently recorded (1.50 per 1,000), followed by neural tube defects and other early brain malformations(†) (0.88), eye abnormalities without mention of a brain abnormality (0.31), and other consequences of central nervous system (CNS) dysfunction without mention of brain or eye abnormalities (0.17). During January 15-September 22, 2016, the U.S. Zika Pregnancy Registry (USZPR) reported 26 infants and fetuses with these same defects among 442 completed pregnancies (58.8 per 1,000) born to mothers with laboratory evidence of possible Zika virus infection during pregnancy (2). Although the ascertainment methods differed, this finding was approximately 20 times higher than the proportion of one or more of the same birth defects among pregnancies during the pre-Zika years. These data demonstrate the importance of population-based surveillance for interpreting data about birth defects potentially related to Zika virus infection.

  1. A comparison of traditional food and health strategies among Taiwanese and Chinese immigrants in Atlanta, Georgia, USA

    Science.gov (United States)

    2013-01-01

    Background Ethnobotanical studies on the use of plants amongst migrant populations are of great relevance to public health. Traditional health strategies, which incorporate plants as medicines, foods, or both – can play an important role in individual well-being. However, at the same time, migrant populations’ traditional knowledge of such practices may be under a state of greater threat of decline due to factors such as limited access to the plant materials and physical isolation from the homeland, which serves as the primary living reservoir for this knowledge. Methods In this study, we conducted a medical ethnobotanical survey focusing on a comparison of local medicinal food and health strategies with members of two Asian immigrant populations in metro-Atlanta: Chinese and Taiwanese. Snowball sampling techniques were employed to recruit 83 study participants, 57 of which were included in the final analysis. Semi-structured interview techniques were used to question participants about their beliefs and usage of the yin yang system, usage of Chinese herbs and medicinal foods, preference and usage of Eastern and Western medicines, and gardening for medicinal foods. Results and conclusion Comparison of the two groups demonstrated a remarkable difference in health strategies concerning medicinal plant use, including statistically significant differences in beliefs concerning yin and yang, uses of Eastern versus Western medicine, and gardening for medicinal foods. Domestic health strategies in the form of medicinal foods play an important role in local health practices, especially among the Taiwanese participants. The collective desire for the use of both Eastern and Western medicine by both groups highlights the important role that cultural competency training will play in preparing allopathic health practitioners to serve increasingly diverse patient populations in the US. PMID:23981857

  2. “Because He Misses His Normal Life Back Home”: Masculinity and Sexual Behavior Among Mexican Migrants in Atlanta, Georgia

    Science.gov (United States)

    Hirsch, Jennifer S.; Muñoz-Laboy, Miguel; Nyhus, Christina M.; Yount, Kathryn M.; Bauermeister, José A.

    2009-01-01

    Context Labor migration presents an important HIV risk context. Effective health promotion begins with understanding cultural and structural influences on sexual risk. Methods This paper presents the quantitative results from a mixed-methods study carried out in 1999 among Mexican migrant men (N=187) in Atlanta, Georgia. The instrument included questions on several domains: Demographic and sexual history, migration motivations, substance use, social support, leisure time practices, and ideas about masculinity, sexuality, and marriage. We created six multivariate regressions to test the association between each of these domains and men's number of partners. Results Greater number of partners was associated with being younger, having fewer years of formal education, and owning a home in Mexico (Model 1); taking more trips to Mexico (Model 2); feeling sex wasn't tied to emotional intimacy and power (Model 3); having a larger social network and fewer frequency of contact with network members (Model 4); having a sex worker as a partner (Model 5); and going out dancing and stripclubs on weekends (Model 6). Conclusion Emergent visions of marriage that include shared sexual intimacy and emotional intimacy and power imply a reorganization of marital sexuality; yet, only those men who emphasize emotional companionship and equity have fewer extramarital sexual partners. An individual-level intervention may be insufficient to transform men's ideas about manhood; programs must acknowledge and target migrant men's social networks and the spaces in which sexual risk may occur. Multilevel strategies, such as the development of more health-enhancing community spaces, active discussions regarding masculinity, and the promotion of safer sexual practices should form part of comprehensive efforts to reduce sexual risk among migrant men. PMID:19291125

  3. Oxidative potential of PM2.5 during Atlanta rush hour: Measurements of in-vehicle dithiothreitol (DTT) activity

    Science.gov (United States)

    Vreeland, Heidi; Weber, Rodney; Bergin, Michael; Greenwald, Roby; Golan, Rachel; Russell, Armistead G.; Verma, Vishal; Sarnat, Jeremy A.

    2017-09-01

    Although exposure to traffic emissions is frequently associated with negative health impacts, few studies have measured air pollution directly in-vehicle, and limited measurements of daily commuter exposure exist. This research, part of the Atlanta Commuter Exposures (ACE) Study, assesses on-roadway in-cabin particulate pollution (PM2.5) collected from scripted rush hour commutes on highways and on non-highway side streets. Water-soluble extracts from PM2.5 filters were analyzed for oxidative potential of water-soluble species using the dithiothreitol (DTT) assay, and results suggest that there may be substantial gas-phase DTT activity in fresh emissions. We measured DTTv activities (i.e., DTT activity normalized to the sampled air volume) that were on average two times higher than comparable measurements collected by stationary roadside monitoring sites. Although some of this difference may be attributable to positive artifacts due to relatively brief (2-h) quartz filter sampling durations, the current findings provide some indication that commuters encounter notably higher exposure to redox-active PM2.5 in the on-road environment. Strong correlations are observed between water-soluble DTT activity and water-soluble organic carbon (WSOC), specifically for the 'semivolatile' WSOC component (measured as the difference between denuded and non-denuded filters). Although potential for artifacts when measuring DTT activity of fresh emissions using filter-based methods is considerable, these results suggest that semivolatile organic species are important contributors to DTT activity, at least in environments where ambient PM2.5 is dominated by vehicular sources.

  4. Monolithic Integration of GaN-based LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Technology and Science, University of Tokushima 2-1 Minami-Josanjima, Tokushima 770-8506 (Japan)

    2011-02-01

    The technology of monolithically integrated GaN-based light-emitting diodes (LEDs) is reported. First, the technology details to realize monolithic integration are described, including the circuit design for high-voltage and alternating current (AC) operation and the technologies for device isolation. The performances of the fabricated monolithic LED arrays are then demonstrated. A monolithic series array with totally 40 LEDs exhibited expected operation function under AC bias. The operation voltage of the array is 72 V when 20 LEDs were connected in series. Some modified circuit designs for high-voltage operation and other monolithic LED arrays are finally reviewed.

  5. InGaAs focal plane array developments and perspectives

    Science.gov (United States)

    Rouvié, A.; Coussement, J.; Huet, O.; Truffer, J. P.; Pozzi, M.; Oubensaid, E. H.; Hamard, S.; Chaffraix, V.; Costard, E.

    2015-05-01

    SWIR spectral band is an attractive domain thanks to its intrinsic properties. Close to visible wavelengths, SWIR images interpretation is made easier for field actors. Besides complementary information can be extracted from SWIR band and bring significant added value in several fields of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). Among the various new technologies able to detect SWIR wavelengths, InGaAs appears as a key technology. Initially developed for optical telecommunications, this material guaranties performances, stability and reliability and is compatible with attractive production capacity. Thanks to high quality material, very low dark current levels can be achieved at ambient temperature. Then uncooled operation can be set up, allowing compact and low power systems. Since the recent transfer of InGaAs imaging activities from III-Vlab, Sofradir provides a framework for the production activity with the manufacturing of high performances products: CACTUS320 SW. The developments towards VGA format with 15μm pixel pitch, lead today to the industrialization of a new product: SNAKE. On one side, the InGaAs detection array presents high performances in terms of dark current and quantum efficiency. On the other side, the low noise ROIC has different additional functionalities. Then this 640x512 @ 15μm sensor appears as well suited to answer the needs of a wide range of applications. In this paper, we will present the Sofradir InGaAs technology, the performances of our last product SNAKE and the perspectives of InGaAs new developments.

  6. GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

    Science.gov (United States)

    Han, Ning; Hou, Jared J; Wang, Fengyun; Yip, SenPo; Yen, Yu-Ting; Yang, Zai-Xing; Dong, Guofa; Hung, TakFu; Chueh, Yu-Lun; Ho, Johnny C

    2013-10-22

    Reliable control in the crystal quality of synthesized III-V nanowires (NWs) is particularly important to manipulate their corresponding electronic transport properties for technological applications. In this report, a "two-step" growth process is adopted to achieve single-crystalline GaAs NWs, where an initial high-temperature nucleation process is employed to ensure the formation of high Ga supersaturated Au7Ga3 and Au2Ga alloy seeds, instead of the low Ga supersaturated Au7Ga2 seeds observed in the conventional "single-step" growth. These two-step NWs are long (>60 μm) and thick (>80 nm) with the minimal defect concentrations and uniform growth orientations. Importantly, these NWs exhibit p-type conductivity as compared to the single-step grown n-type NWs for the same diameter range. This NW conductivity difference (p- versus n-channel) is shown to originate from the donor-like crystal defects, such as As precipitates, induced by the low Ga supersaturated multicrystalline Au7Ga2 alloy seeds. Then the well-controlled crystal quality for desired electronic properties is further explored in the application of large-scale p-type GaAs NW parallel array FETs as well as the integration of both p- and n-type GaAs NWs into CMOS inverters. All these illustrate the successful control of NW crystal defects and corresponding electronic transport properties via the manipulation of Ga supersaturation in the catalytic alloy tips with different preparation methods. The understanding of this relationship between NW crystal quality and electronic transport properties is critical and preferential to the future development of nanoelectronic materials, circuit design, and fabrication.

  7. Minority carrier properties of carbon-doped GaInAsN bipolar transistors

    Science.gov (United States)

    Welser, R. E.; Setzko, R. S.; Stevens, K. S.; Rehder, E. M.; Lutz, C. R.; Hill, D. S.; Zampardi, P. J.

    2004-08-01

    We have developed an InGaP/GaInAsN/GaAs double heterojunction bipolar transistor technology that substantially improves upon existing GaAs-based HBTs. Band-gap engineering with dilute nitride GaInAsN alloys is utilized to enhance a variety of key device characteristics, including lower operating voltages, improved temperature stability and increased RF performance. Furthermore, GaInAsN-based HBTs are fully compatible with existing high-volume MOVPE and IC fabrication processes. While poor lifetimes have limited the applicability of dilute nitride materials in photovoltaic applications, we achieve minority carrier characteristics that approach those of conventional GaAs HBTs. We have found that a combination of growth algorithm optimization and compositional grading are critical for improving minority carrier properties in GaInAsN. In this work, we characterize the impact of both carbon and nitrogen doping on minority carrier lifetimes in GaInAsN base layers. Minority carrier lifetimes are extracted from direct measurements on bipolar transistor device structures. Specifically, lifetime is derived from the DC current gain, or bgr, taken in the bias regime dominated by neutral base recombination. Lifetimes extracted using this technique are observed to be inversely proportional to both carbon and nitrogen doping. As with conventional C-doped GaAs HBTs, current soaking (i.e. burn-in) is found to have a significant impact on GaInAsN HBTs. While we can replicate poor as-grown lifetimes consistent with those reported in photovoltaic dilute nitride materials, our best material to date exhibits nearly 30 × higher lifetime after current soaking.

  8. Gibberellin biosynthesis in maize. Metabolic studies with GA{sub 15}, GA{sub 24}, GA{sub 25}, GA{sub 7}, and 2,3-dehydro-GA{sub 9}

    Energy Technology Data Exchange (ETDEWEB)

    Davis, G.; Kobayashi, Masatomo; Phinney, B.O.; Lange, T.; Croker, S.J.; Gaskin, P.; MacMillan, J.

    1999-11-01

    [17-{sup 14}C]-Labeled GA{sub 15}, GA{sub 24}, GA{sub 25}, GA{sub 7}, and 2,3-dehydro-GA{sub 9} were separately injected into normal, dwarf-1 (d1), and dwarf-5 (d5) seedlings of maize (Zea mays L.). Purified radioactive metabolites from the plant tissues were identified by sull-scan gas chromatography-mass spectrometry and Kovats retention index data. The metabolites from GA{sub 15} were GA{sub 44}, GA{sub 19}, GA{sub 20}, GA{sub 113}, and GA{sub 15}-15,16-ene (artifact?). GA{sub 24} was metabolized to GA{sub 19}, GA{sub 20}, and GA{sub 17}. The metabolites from GA{sub 25} were GA{sub 17}, GA{sub 25} 16{alpha},17-H{sub 2}-17-OH, and HO-GA{sub 25} (hydroxyl position not determined). GA{sub 7} was metabolized to GA{sub 30}, GA{sub 3}, isoGA{sub 3} (artifact?), and trace amounts of GA{sub 7}-diene-diacid (artifact?). 2,3-Dehydro-GA{sub 9} was metabolized to GA{sub 5}, GA{sub 7} (trace amounts), 2,3-dehydro-GA{sub 10} (artifact?), GA{sub 31}, and GA{sub 62}. Their results provide additional in vivo evidence of a metabolic grid in maize (i.e., pathway convergence). The grid connects members of a putative, non-early 3,130hydroxylation branch pathway to the corresponding members of the previously documented early 13-hydroxylation branch pathway. The inability to detect the sequence GA{sub 12}{r{underscore}arrow} GA{sub 15} {r{underscore}arrow} GA{sub 24} {r{underscore}arrow} GA{sub 9} indicates that the non-early 3,13-hydroxylation pathway probably plays a minor role in the origin of bioactive gibberellins in maize.

  9. High-Mobility GaSb Nanostructures Cointegrated with InAs on Si.

    Science.gov (United States)

    Borg, Mattias; Schmid, Heinz; Gooth, Johannes; Rossell, Marta D; Cutaia, Davide; Knoedler, Moritz; Bologna, Nicolas; Wirths, Stephan; Moselund, Kirsten E; Riel, Heike

    2017-02-22

    GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors and mid-IR photodetectors. Here, we investigate the MOCVD growth and properties of GaSb nanostructures monolithically integrated onto silicon-on-insulator wafers using template-assisted selective epitaxy. A high degree of morphological control allows for GaSb nanostructures with critical dimensions down to 20 nm. Detailed investigation of growth parameters reveals that the GaSb growth rate is governed by the desorption processes of an Sb surface, and in turn is insensitive to changes in material transport efficiency. The GaSb crystal structure is typically zinc-blende with a low density of rotational twin defects and even occasional twin-free structures are observed. Van der Pauw/Hall measurements are conducted on 20 nm thick GaSb nanostructures, revealing high hole mobility of 760 cm2/Vs, which matches literature values for high-quality bulk GaSb crystals. Finally, we demonstrate a process that enables cointegration of GaSb and InAs nanostructures in close vicinity on Si, a preferred material combination ideally suited for high-performance complementary III-V MOS technology.

  10. Quantum well infrared photodetectors (QWIP) with selectively regrown N-GaAs plugs

    Science.gov (United States)

    Matsukura, Yusuke; Nishino, Hironori; Tanaka, Hitoshi; Fujii, Toshio

    2001-10-01

    We fabricated the GaAs/AlGaAs Quantum Well Infrared Photo detector (QWIP) focal plane array with selectively re-grown N- GaAs interconnection plugs and demonstrated its device operation, in order to establish the technology to obtain both complex device functions and device manufacturability. MBE (Molecular Beam Epitaxy) grown QWIP MQW wafers were covered with SiON and SiNx mask films to obtain selectivity of the re-growth process. N-GaAs plugs were re-grown selectively with low-pressure MOCVD (Metal-Organic Chemical Vapor Deposition) with AsH3 and Dimethylgalliumchloride as precursors, only on the bottom surfaces of the holes for the interconnection to extract the electrodes from the underlying epilayer. Cross- sectional SEM observation revealed that the feature of the re- grown N-GaAs plugs was triangular, rather than rectangular as expected. The reason for this discrepancy is not yet clear. The electrical contact between the epilayer and re-grown N- GaAs plug was 'ohmic-like,' without any trace of interfacial barrier. The Current-Voltage characteristics of the fabricated QWIP device showed no tangible leakage current between the N- GaAs plug and device structure, indicating that electrical insulation between the N-GaAs plugs and device structure was sufficient. Fabricated devices were successfully operated as a hybrid focal plane array, indicating the selective re-growth was a promising technique to realize complex QWIP based devices.

  11. Characterization of NIR InGaAs imager arrays for the JDEM SNAPmission concept

    Energy Technology Data Exchange (ETDEWEB)

    Seshadri, S.; Cole, M.D.; Hancock, B.; Ringold, P.; Wrigley, C.; Bonati, M.; Brown, M.G.; Schubnell, M.; Rahmer, G.; Guzman, D.; Figer,D.; Tarle, G.; Smith, R.M.; Bebek, C.

    2006-05-23

    We present the results of a study of the performance of InGaAs detectors conducted for the SuperNova Acceleration Probe (SNAP) dark energy mission concept. Low temperature data from a nominal 1.7um cut-off wavelength 1kx1k InGaAs photodiode array, hybridized to a Rockwell H1RG multiplexer suggest that InGaAs detector performance is comparable to those of existing 1.7um cut-off HgCdTe arrays. Advances in 1.7um HgCdTe dark current and noise initiated by the SNAP detector research and development program makes it the baseline detector technology for SNAP. However, the results presented herein suggest that existing InGaAs technology is a suitable alternative for other future astronomy applications.

  12. Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.

    Science.gov (United States)

    Shi, Suixing; Zhang, Zhi; Lu, Zhenyu; Shu, Haibo; Chen, Pingping; Li, Ning; Zou, Jin; Lu, Wei

    2015-01-01

    In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.

  13. Low threshold all-optical crossbar switch on GaAs-GaAlAs channel waveguide arrays

    Science.gov (United States)

    Jannson, Tomasz; Kostrzewski, Andrew

    1994-09-01

    During the Phase 2 project entitled 'Low Threshold All-Optical Crossbar Switch on GaAs - GaAlAs Channel Waveguide Array,' Physical Optics Corporation (POC) developed the basic principles for the fabrication of all-optical crossbar switches. Based on this development. POC fabricated a 2 x 2 GaAs/GaAlAs switch that changes the direction of incident light with minimum insertion loss and nonlinear distortion. This unique technology can be used in both analog and digital networks. The applications of this technology are widespread. Because the all-optical network does not have any speed limitations (RC time constant), POC's approach will be beneficial to SONET networks, phased array radar networks, very high speed oscilloscopes, all-optical networks, IR countermeasure systems, BER equipment, and the fast growing video conferencing network market. The novel all-optical crossbar switch developed in this program will solve interconnect problems. and will be a key component in the widely proposed all-optical 200 Gb/s SONET/ATM networks.

  14. Projecting Future Urbanization with Prescott College's Spatial Growth Model to Promote Environmental Sustainability and Smart Growth, A Case Study in Atlanta, Georgia

    Science.gov (United States)

    Estes, Maurice G., Jr.; Crosson, William; Limaye, Ashutosh; Johnson, Hoyt; Quattrochi, Dale; Lapenta, William; Khan, Maudood

    2006-01-01

    Planning is an integral element of good management and necessary to anticipate events not merely respond to them. Projecting the quantity and spatial distribution of urban growth is essential to effectively plan for the delivery of city services and to evaluate potential environmental impacts. The major drivers of growth in large urban areas are increasing population, employment opportunities, and quality of life attractors such as a favorable climate and recreation opportunities. The spatial distribution of urban growth is dictated by the amount and location of developable land, topography, energy and water resources, transportation network, climate change, and the existing land use configuration. The Atlanta region is growing very rapidly both in population and the consumption of forestland or low-density residential development. Air pollution and water availability are significant ongoing environmental issues. The Prescott Spatial Growth Model (SGM) was used to make growth projections for the metropolitan Atlanta region to 2010,2020 and 2030 and results used for environmental assessment in both business as usual and smart growth scenarios. The Prescott SGM is a tool that uses an ESRI ArcView extension and can be applied at the parcel level or more coarse spatial scales and can accommodate a wide range of user inputs to develop any number of growth rules each of which can be weighted depending on growth assumptions. These projections were used in conjunction with meteorological and air quality models to evaluate future environmental impacts. This presentation will focus on the application of the SGM to the 13-County Atlanta Regional Commission planning jurisdiction as a case study. The SGM will be described, including how rule sets are developed and the decision process for allocation of future development to available land use categories. Data inputs required to effectively run the model will be discussed. Spatial growth projections for ten, twenty, and thirty

  15. Projecting Future Urbanization with Prescott College's Spatial Growth Model to Promote Environmental Sustainability and Smart Growth, A Case Study in Atlanta, Georgia

    Science.gov (United States)

    Estes, Maurice G., Jr.; Crosson, William; Limaye, Ashutosh; Johnson, Hoyt; Quattrochi, Dale; Lapenta, William; Khan, Maudood

    2006-01-01

    Planning is an integral element of good management and necessary to anticipate events not merely respond to them. Projecting the quantity and spatial distribution of urban growth is essential to effectively plan for the delivery of city services and to evaluate potential environmental impacts. The major drivers of growth in large urban areas are increasing population, employment opportunities, and quality of life attractors such as a favorable climate and recreation opportunities. The spatial distribution of urban growth is dictated by the amount and location of developable land, topography, energy and water resources, transportation network, climate change, and the existing land use configuration. The Atlanta region is growing very rapidly both in population and the consumption of forestland or low-density residential development. Air pollution and water availability are significant ongoing environmental issues. The Prescott Spatial Growth Model (SGM) was used to make growth projections for the metropolitan Atlanta region to 2010,2020 and 2030 and results used for environmental assessment in both business as usual and smart growth scenarios. The Prescott SGM is a tool that uses an ESRI ArcView extension and can be applied at the parcel level or more coarse spatial scales and can accommodate a wide range of user inputs to develop any number of growth rules each of which can be weighted depending on growth assumptions. These projections were used in conjunction with meteorological and air quality models to evaluate future environmental impacts. This presentation will focus on the application of the SGM to the 13-County Atlanta Regional Commission planning jurisdiction as a case study. The SGM will be described, including how rule sets are developed and the decision process for allocation of future development to available land use categories. Data inputs required to effectively run the model will be discussed. Spatial growth projections for ten, twenty, and thirty

  16. Design and maskless fabrication of ultrathin suspended membranes of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Tiginyanu, I.M. [Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Chisinau (Moldova); National Center for Materials Study and Testing, Technical University of Moldova, Chisinau (Moldova); Popa, V. [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau (Moldova); Stevens-Kalceff, M.A. [School of Physics, University of New South Wales, Sydney, NSW (Australia); Gerthsen, D.; Brenner, P. [Laboratory for Electron Microscopy, University of Karlsruhe (Germany); Pavlidis, D. [Institute of Electronics, Microelectronics and Nanotechnology, Cite Scientifique, Villeneuve d' Ascq Cedex (France)

    2012-04-15

    We report the maskless fabrication of ultrathin suspended GaN membranes designed by focused ion beam treatment of the GaN epilayer surface with subsequent photoelectrochemical etching. This technological approach allows the fabrication of ultrathin membranes, as well as supporting micro/nanocolumns in a controlled fashion. The analysis of the spatial and spectral distribution of microcathodoluminescence demonstrates that the membranes exhibit mainly yellow luminescence. These results pave the way for the fabrication of ultrathin suspended GaN membranes for MEMS/NEMS applications. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. High-performance AlGaInP light-emitting diodes

    Science.gov (United States)

    Maranowski, Steven A.; Camras, Michael D.; Chen, Changhua; Cook, Lou W.; Craford, M. G.; DeFevere, Dennis C.; Fletcher, Robert M.; Hofler, Gloria E.; Kish, Frederick A.; Kuo, Chihping; Moll, A. J.; Osentowski, Tim; Park, K. G.; Peanasky, Michael J.; Rudaz, S. L.; Steigerwald, Dan A.; Steranka, Frank M.; Stockman, Steve A.; Tan, I. H.; Tarn, J.; Yu, Jingxi; Ludowise, Mike J.; Robbins, Virginia M.

    1997-04-01

    A new class of LEDs based on the AlGaInP material system first became commercially available in the early 1990's. These devices benefit from a direct bandgap from the red to the yellow-green portion of the spectrum. The high efficiencies possible in AlGaInP across this spectrum have enabled new applications for LEDs including automotive lighting, outdoor variable message signs, outdoor large screen video displays, and traffic signal lights. A review of high-brightness AlGaInP LED technology will be presented.

  18. Growth and Photoluminescence of GaAs Quantum Dots on Si(1O0)

    Institute of Scientific and Technical Information of China (English)

    张建国; 李广海; 张勇; 晋云霞; 张立德

    2001-01-01

    GaAs quantum dots (QDs) with high density and remarkable uniformity in dot size and distribution grown on Si(100) surface with artificial topography by radio-frequency sputtering have been demonstrated. The photoluminescence spectrum has been recorded. The growth of GaAs QDs is initiated with the preferential nucleation of small dots along ripples controlled by the Stranski-Krastanow growth mode. This method may be useful in combining high-speed and optoelectronic GaAs devices with Si integrated-circuit technology.

  19. GaAs-MnAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Sadowski, Janusz [MAX-Lab, Lund University, P.O. Box 118, 221 00 Lund (Sweden); Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa (Poland); Siusys, Aloyzas; Wojciechowski, Tomasz; Reszka, Anna; Kowalski, Bogdan [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa (Poland); Kovacs, Andras; Kasama, Takeshi [Center for Electron Nanoscopy, Technical University of Denmark, Kgs. Lyngby 2800 (Denmark); Dunin-Borkowski, Rafal E. [Center for Electron Nanoscopy, Technical University of Denmark, Kgs. Lyngby 2800 (Denmark); Institute for Microstructure Research, Peter Gruenberg Institute, Forschungszentrum Juelich, 52425 Juelich (Germany)

    2011-07-15

    Different strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular beam epitaxy (MBE) grown nanostructures combining GaAs and Mn were investigated. Four types of structures have been studied: (i) self-catalyzed GaAs:Mn NWs grown at low temperatures on GaAs(100) substrates; (ii) GaAs:Mn NWs grown at high temperatures on Si(100) substrates; (iii) GaAs-GaMnAs core-shell NW structures; (iv) GaAs-MnAs core-shell NW structures grown on Si(100). Structures of types (i), (iii), and (iv) exhibit ferromagnetic properties. Right: Scanning electron microscopy image of Mn doped GaAs NWs with Ga droplets at the tops, grown by MBE on oxidized Si(100) substrate in the autocatalytic growth mode. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. I-DLTS, Electrical Lag and Low Frequency Noise measurements of Trapping effects in AlGaN/GaN HEMT for reliability studies

    OpenAIRE

    2011-01-01

    International audience; GaN technologies have penetrated the microelectronic markets, proving the high potential of this technology for a wide variety of applications (optoLEDs and Laser, power and RF electronics). However, robustness of these widebandgap technologies still needs to be improved: a large number of studies have addressed the main different roots provoking degradation of RF, DC or thermal performances of transistors dedicated to high frequency applications. However, experiencing...

  1. MOCVD growth of GaAs on Si using (Al,In) GaAs/GaAs buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Fujita, K.; Shiba, Y.; Asai, K. (Advanced Tech. Research Labs., Sumitomo Metal Industries, Ltd., Hyogo (Japan))

    1991-01-01

    GaAs was grown on Si using an (Al,In)GaAs/GaAs buffer layer. The etch pit density (EPD) revealed by molten KOH could be reduced by adding Al{sub x}Ga{sub 1-x}As or In{sub x}Ga{sub 1-x}As to the GaAs buffer layer, depending on the composition (x); the lowest EPD, 4x10{sup 6} cm{sup -2} was obtained when x was 0.3 in Al{sub x}Ga{sub 1-x}As. To understand the results, the initial growth stage of GaAs on Si was investigated by scanning electron microscopy. GaAs growth using an Al{sub 0.3}Ga{sub 0.7}As layer produced small islands at a sufficiently high density that the islands coalesced, unlike those without the layer. The dependence of EPD and island density on the composition (x) were almost the same. This result indicates that improvement of the quality of the GaAs layer is related to the coalescence of the GaAs island at an early stage of the growth of GaAs on Si. (orig.).

  2. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    Energy Technology Data Exchange (ETDEWEB)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  3. Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10 THz band.

    Science.gov (United States)

    Lim, C B; Ajay, A; Bougerol, C; Haas, B; Schörmann, J; Beeler, M; Lähnemann, J; Eickhoff, M; Monroy, E

    2015-10-30

    This paper assesses intersubband (ISB) transitions in the 1-10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells (QWs) were designed to contain two confined electronic levels, decoupled from the neighboring wells. Structural analysis reveals flat and regular QWs in the two perpendicular in-plane directions, with high-angle annular dark-field scanning transmission electron microscopy images showing inhomogeneities of the Al composition in the barriers along the growth axis. We do not observe extended structural defects (stacking faults or dislocations) introduced by the epitaxial process. Low-temperature ISB absorption from 1.5 to 9 THz (6.3-37.4 meV) is demonstrated, covering most of the 7-10 THz band forbidden to GaAs-based technologies.

  4. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

    Science.gov (United States)

    Liuan, Li; Jiaqi, Zhang; Yang, Liu; Jin-Ping, Ao

    2016-03-01

    In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 °C with the contact resistance approximately 1.6 Ω·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

  5. GaN nanostructure-based light emitting diodes and semiconductor lasers.

    Science.gov (United States)

    Viswanath, Annamraju Kasi

    2014-02-01

    GaN and related materials have received a lot of attention because of their applications in a number of semiconductor devices such as LEDs, laser diodes, field effect transistors, photodetectors etc. An introduction to optical phenomena in semiconductors, light emission in p-n junctions, evolution of LED technology, bandgaps of various semiconductors that are suitable for the development of LEDs are discussed first. The detailed discussion on photoluminescence of GaN nanostructures is made, since this is crucial to develop optical devices. Fabrication technology of many nanostructures of GaN such as nanowires, nanorods, nanodots, nanoparticles, nanofilms and their luminescence properties are given. Then the optical processes including ultrafast phenomena, radiative, non-radiative recombination, quantum efficiency, lifetimes of excitons in InGaN quantum well are described. The LED structures based on InGaN that give various important colors of red, blue, green, and their design considerations to optimize the output were highlighted. The recent efforts in GaN technology are updated. Finally the present challenges and future directions in this field are also pointed out.

  6. Adaptive and active materials: selected papers from the ASME 2012 Conference on Smart Materials, Adaptive Structures and Intelligent Systems (SMASIS 12) (Stone Mountain, GA, USA, 19-21 September 2012)

    Science.gov (United States)

    Seelecke, Stefan; Erturk, Alper; Ounaies, Zoubeida; Naguib, Hani; Huber, John; Turner, Travis; Anderson, Iain; Philen, Michael; Baba Sundaresan, Vishnu

    2013-09-01

    The fifth annual meeting of the ASME/AIAA Smart Materials, Adaptive Structures and Intelligent Systems Conference (SMASIS) was held in beautiful Stone Mountain near Atlanta, GA. It is the conference's objective to provide an up-to-date overview of research trends in the entire field of smart materials systems. This was reflected in keynote speeches by Professor Eduard Arzt (Institute of New Materials and Saarland University, Saarbrücken, Germany) on 'Micro-patterned artificial 'Gecko' surfaces: a path to switchable adhesive function', by Professor Ray H Baughman (The Alan G MacDiarmid NanoTech Institute, University of Texas at Dallas) on 'The diverse and growing family of carbon nanotube and related artificial muscles', and by Professor Richard James (University of Minnesota) on 'The direct conversion of heat to electricity using multiferroic materials with phase transformations'. SMASIS 2012 was divided into eight symposia which span basic research, applied technological design and development, and industrial and governmental integrated system and application demonstrations. • SYMP 1. Development and characterization of multifunctional materials. • SYMP 2. Mechanics and behavior of active materials. • SYMP 3. Modeling, simulation and control of adaptive systems. • SYMP 4. Integrated system design and implementation. • SYMP 5. Structural health monitoring/NDE. • SYMP 6. Bio-inspired materials and systems. • SYMP 7. Energy harvesting. • SYMP 8. Structural and materials logic. This year we were particularly excited to introduce a new symposium on energy harvesting, which has quickly matured from a special track in previous years to an independent symposium for the first time. The subject cuts across fields by studying different materials, ranging from piezoelectrics to electroactive polymers, as well as by emphasizing different energy sources from wind to waves and ambient vibrations. Modeling, experimental studies, and technology applications all

  7. GA based CNC turning center exploitation process parameters optimization

    Directory of Open Access Journals (Sweden)

    Z. Car

    2009-01-01

    Full Text Available This paper presents machining parameters (turning process optimization based on the use of artificial intelligence. To obtain greater efficiency and productivity of the machine tool, optimal cutting parameters have to be obtained. In order to find optimal cutting parameters, the genetic algorithm (GA has been used as an optimal solution finder. Optimization has to yield minimum machining time and minimum production cost, while considering technological and material constrains.

  8. Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures

    Science.gov (United States)

    Gies, S.; Holz, B.; Fuchs, C.; Stolz, W.; Heimbrodt, W.

    2017-01-01

    (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures have been investigated using continuous wave and time-resolved photoluminescence spectroscopy at various temperatures. A complex interplay was observed between the excitonic type-II transitions with electrons in the (Ga,In)As well and holes in the Ga(As,Sb) well and the type-I excitons in the (Ga,In)As and Ga(As,Sb) wells. The type-II luminescence exhibits a strongly non-exponential temporal behavior below a critical temperature of T c = 70 K. The transients were analyzed in the framework of a rate-equation model. It was found that the exciton relaxation and hopping in the localized states of the disordered ternary Ga(As,Sb) are the decisive processes to describe the dynamics of the type-II excitons correctly.

  9. Solar heating and cooling experiment for a school in Atlanta: performance report. [George A. Towns Elementary School

    Energy Technology Data Exchange (ETDEWEB)

    1977-08-01

    This report documents the performance, and conclusions therefrom, of a 13 month period of monitoring the performance of the experimental solar heating and cooling system installed in the George A. Towns Elementary School, Atlanta, Georgia. The solar collector system involves 10,360 ft/sup 2/ of PPG ''Baseline'' flat-plate collectors with an ALCOA selective coating, augmented by 10,800 square feet of aluminized Mylar reflectors. Three 15,000 gallon steel storage tanks, a 100-ton Arkla absorption chiller together with its cooling tower, a collector gravity drain system with a 1,600 gallon holding tank and a collector nitrogen purge system, six pumps and 26 pneumatic control valves were installed and interfaced with the pre-existing gas furnace and distribution system. In the winter heating mode, the solar energy is stored in all three tanks, total capacity of 45,000 gallons, between design temperatures of 105/sup 0/ to 140/sup 0/F. As soon as Tank 1 is brought up to 140/sup 0/F, the control valves isolate it from the collector loop, and the hot water from the collectors is used to charge Tanks 2 and then Tank 3. Water can be drawn from Tank 1 to heat the school while Tanks 2 and 3 are being charged. As a consequence of the flexibility provided by the three tanks, compared to a single tank of equivalent capacity, the thermal lag in the system is reduced. A variable speed pump, in response to sensors at the inlet and outlet of the collectors, modulates the flow of water through each collector from a maximum of .5 gpm to a minimum of .1 gpm, attempting to maintain a temperature rise of about 10/sup 0/F. In the summer cooling mode, storage tanks 2 and 3 are designed to store hot water at temperatures between 180/sup 0/ to 200/sup 0/F, and tank 1 is used to store chilled water. (WHK)

  10. Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier

    Institute of Scientific and Technical Information of China (English)

    Ru-Dai Quan; Jin-Cheng Zhang; Jun-Shuai Xue; Yi Zhao; Jing Ning; Zhi-Yu Lin; Ya-Chao Zhang

    2016-01-01

    GaN-based heterostructures with an InAlGaN/AlGaN composite barrier on sapphire (0001) substrates are grown by a low-pressure metal organic chemical vapor deposition system.Compositions of the InAlGaN layer are determined by x-ray photoelectron spectroscopy,structure and crystal quality of the heterostructures are identified by high resolution x-ray diffraction,surface morphology of the samples are examined by an atomic force microscope,and Hall effect and capacitance-voltage measurements are performed at room temperature to evaluate the electrical properties of heterostructures.The Al/In ratio of the InAlGaN layer is 4.43,which indicates that the InAlGaN quaternary layer is nearly lattice-matched to the GaN channel.Capacitance-voltage results show that there is no parasitic channel formed between the InAlGaN layer and the AlGaN layer.Compared with the InAlGaN/GaN heterostructure,the electrical properties of the InAlGaN/AlGaN/GaN heterostructure are improved obviously.Influences of the thickness of the AlGaN layer on the electrical properties of the heterostructures are studied.With the optimal thickness of the AlGaN layer to be 5 nm,the 2DEG mobility,sheet density and the sheet resistance of the sample is 1889.61 cm2/V.s,1.44 × 1013 cm-2 and as low as 201.1 Ω/sq,respectively.

  11. Aspects of native oxides etching on n-GaSb(1 0 0) surface

    Energy Technology Data Exchange (ETDEWEB)

    Cotirlan, C., E-mail: cotirlan@infim.ro; Ghita, R.V.; Negrila, C.C.; Logofatu, C.; Frumosu, F.; Lungu, G.A.

    2016-02-15

    Graphical abstract: - Highlights: • A technology for GaSb surface cleaning is proposed. • The technology combines ion sputtering, chemical etching, annealing for oxide removal. • The ARXPS studies on GaSb surfaces are presented in a detailed manner. • The surface stoichiometry is restored after recommended technology for contacting. - Abstract: Gallium antimonide (GaSb) is the basis of the most photovoltaic and thermophotovoltaic (TPV) systems and its innovative technological aspects based on modern ultra-high vacuum techniques are in trend for device achievement. The real surface of GaSb is modified by technological processes that can conduce to problems related to the reproducible control of its surface properties. The GaSb surface is reactive in atmosphere due to oxygen presence and exhibits a native oxide layer. The evolution of native oxides during the ion sputtering, chemical etching and thermal annealing processes for preparing the surface is presented in detailed way. Ratios of surface constituents are obtained by Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS). Moreover, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Atomic Force Microscopy (AFM) and Low-Energy Electron Diffraction (LEED) are used for characterization. The surface stoichiometry is changed using a specific etchant (e.g. citric acid) at different etching time and is analyzed by ARXPS, SEM, EDS and AFM methods. The experimental results provide useful information regarding surface native oxides characteristics on n-GaSb(1 0 0) to be taken into account for development of low resistance contacts for TPV devices based on GaSb alloy.

  12. Exposición «espacios e ilusiones» en el museo superior de arte, Atlanta - EE. UU.

    Directory of Open Access Journals (Sweden)

    Scogin, Mack

    1980-10-01

    Full Text Available This Exhibit, carried out under the auspices of several cultural organizations of the city of Atlanta, intends to offer a distorted vision of space at the same time as it is real. It has been designed as a labyrinth of rooms in which various special effects are set up, such as: mirrors, lights, sound, shadow, movements, etc. Among the different rooms, the following stand out: the illuminated room, with shadows that appear and disappear on its walls; the perspective room, where the length of the vestibule can be easily mistaken; the nature room, where different animal species are seen by T.V., etc.

    Esta Exposición, realizada bajo los auspicios de varias organizaciones culturales de la ciudad de Atlanta, pretende ofrecer una visión distorsionada del espacio a la vez que real. Se ha concebido como un laberinto de salas en las que existen diversos efectos especiales tales como: espejos, luces, sonidos, sombras, movimientos, etc. Entre las diversas salas destacan: la Iluminada, en cuyos muros aparecen y desaparecen sombras; la de perspectiva, en la que se equivoca fácilmente la longitud del vestíbulo; la de la naturaleza, en la que mediante T.V. se ven distintas especies de animales; etc.

  13. 'Nikkei Global Environment Technology Prize' awarded to the joint research group on regeneration of tropical forest; Nettairin saisei kyodo kenkyu ga 'Nikkei chikyu kankyo gijutsusho' wo jusho

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, T. [Kansai Electric Power Co. Inc., Osaka (Japan)

    1998-11-10

    The tropical forest regeneration technology research group of Kansai Electric Power Company and Kansai Environment Center has been performing the research and development of tropical forest regeneration technology jointly with Indonesia since fiscal 1992. The group was awarded with the Global Environment Technology Prize from Nihon Keizai Shimbun, Inc. As a result of stringent examination on 97 applications, being two times as many as in usual years, the group received high evaluation on the originality, reality and possibility of proliferation of its research, and impacts given to the societies. Two other groups were also selected. The achievements were reported by the representative of the group in the award commemoration lecture at the global environment economist summit held by the Nikkei press the same day. Conventionally, afforestation done with considerable efforts has often been lost by forest fires and slash-and-burn farming, whereas the present research aims at establishing a comprehensive afforestation technology considering social and economic aspects, and CO2 fixation. As one of the choices of flexible measures as a result of the effect of forests having been recognized in COP3, frameworks for utilizing the mechanisms of joint implementation and clean resource development were introduced. Ever increasing expectations are placed on the achievements of the present research works. (NEDO)

  14. Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs

    Institute of Scientific and Technical Information of China (English)

    MU Sen; YU Tong-Jun; HUANG Liu-Bing; JIA Chuan-Yu; PAN Yao-Bo; YANG Zhi-Jian; CHEN Zhi-Zhong; QIN Zhi-Xin; ZHANG Guo-Yi

    2007-01-01

    Electrical characteristics of Ino.05Gao.95N/AJo.07Gao.93N and Ino.05Gao.95N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400 nm wavelength are measured. It is found that for In-GaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the AJ0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic ofp-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.

  15. Flood-inundation maps for Peachtree Creek from the Norfolk Southern Railway bridge to the Moores Mill Road NW bridge, Atlanta, Georgia

    Science.gov (United States)

    Musser, Jonathan W.

    2012-01-01

    Digital flood-inundation maps for a 5.5-mile reach of the Peachtree Creek from the Norfolk Southern Railway bridge to the Moores Mill Road NW bridge, were developed by the U.S. Geological Survey (USGS) in cooperation with the City of Atlanta, Georgia. The inundation maps, which can be accessed through the USGS Flood Inundation Mapping Science Web site at http://water.usgs.gov/osw/flood_inundation/, depict estimates of the areal extent and depth of flooding corresponding to selected water levels (stages) at the USGS streamgage at Peachtree Creek at Atlanta, Georgia (02336300) and the USGS streamgage at Chattahoochee River at Georgia 280, near Atlanta, Georgia (02336490). Current water level (stage) at these USGS streamgages may be obtained at http://waterdata.usgs.gov/ and can be used in conjunction with these maps to estimate near real-time areas of inundation. The National Weather Service (NWS) is incorporating results from this study into the Advanced Hydrologic Prediction Service (AHPS) flood warning system (http:/water.weather.gov/ahps/). The NWS forecasts flood hydrographs at many places that commonly are collocated at USGS streamgages. The forecasted peak-stage information for the USGS streamgage at Peachtree Creek, which is available through the AHPS Web site, may be used in conjunction with the maps developed in this study to show predicted areas of flood inundation. A one-dimensional step-backwater model was developed using the U.S. Army Corps of Engineers HEC–RAS software for a 6.5-mile reach of Peachtree Creek and was used to compute flood profiles for a 5.5-mile reach of the creek. The model was calibrated using the most current stage-discharge relations at the Peachtree Creek at Atlanta, Georgia, streamgage (02336300), and the Chattahoochee River at Georgia 280, near Atlanta, Georgia, streamgage (02336490) as well as high water marks collected during the 2010 annual peak flow event. The hydraulic model was then used to determine 50 water

  16. Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As

    Energy Technology Data Exchange (ETDEWEB)

    Adell, J; Ulfat, I; Ilver, L; Kanski, J [Department of Applied Physics, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Sadowski, J [Institute of Physics, Polish Academy of Sciences, PL-02-668 Warsaw (Poland); Karlsson, K [Department of Life Sciences, University of Skoevde, SE-541 28 Skoevde (Sweden)

    2011-03-02

    Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.

  17. Multilayers of InGaAs Nanostructures Grown on GaAs(210 Substrates

    Directory of Open Access Journals (Sweden)

    Wang Zhiming

    2010-01-01

    Full Text Available Abstract Multilayers of InGaAs nanostructures are grown on GaAs(210 by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210 nanostructures are achieved.

  18. Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As.

    Science.gov (United States)

    Adell, J; Ulfat, I; Ilver, L; Sadowski, J; Karlsson, K; Kanski, J

    2011-03-02

    Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.

  19. Thermal Stability of Strained AlGaN/GaN Heterostructures

    Institute of Scientific and Technical Information of China (English)

    ZHANG Min; XIAO Hong-Di; LIN Zhao-Jun

    2006-01-01

    @@ The thermal stability of strained AlGaN/GaN heterostructures is characterized by comparing unannealed and 700℃ 30-min annealed Ni Schottky contacts prepared on strained AlGaN/GaN heterostructures. Using photoemission, capacitance-voltage measurements, and the self-consistent solution of Schrodinger's and Poisson's equations, it is found that after 700℃ 30-min thermal annealing the Schottky barrier height of Ni Schottky contacts on strained AlGaN/GaN heterostructures is increased, and the sheet density of polarization charges and the sheet density of two-dimensional electron gas (2DEG) electrons for the strained AlGaN/GaN heterostructures are reduced. These results are closely related to the performance of AlGaN/GaN HFETs at high temperature.

  20. Development of GaN/AlGaN Terahertz Quantum Cascade Laser

    Science.gov (United States)

    2008-11-19

    AFOSR-Taiwan Nanoscience Initiative Project Final Report Project Title Development of GaN /AlGaN Terahertz Quantum Cascade Laser...DATES COVERED 14-06-2007 to 13-06-2008 4. TITLE AND SUBTITLE Development of GaN -Based Terahertz Quantum Cascade Laser 5a. CONTRACT NUMBER...the GaN /AlGaN active region for terahertz quantum cascade lasers using MOCVD system based on the quantum cascade structure proposed by Prof. Greg Sun

  1. Evolution of threading dislocations in GaN epitaxial laterally overgrown on GaN templates using self-organized graphene as a nano-mask

    Science.gov (United States)

    Xu, Yu; Cao, Bing; He, Shunyu; Qi, Lin; Li, Zongyao; Cai, Demin; Zhang, Yumin; Ren, Guoqiang; Wang, Jianfeng; Wang, Chinhua; Xu, Ke

    2017-09-01

    Growth of high-quality GaN within a limited thickness is still a challenge, which is important both in improving device performance and in reducing the cost. In this work, a self-organized graphene is investigated as a nano-mask for two-step GaN epitaxial lateral overgrowth (2S-ELOG) in hydride vapor phase epitaxy. Efficient improvement of crystal quality was revealed by x-ray diffraction. The microstructural properties, especially the evolution of threading dislocations (TDs), were investigated by scanning electron microscopy and transmission electron microscopy. Stacking faults blocked the propagation of TDs, and fewer new TDs were subsequently generated by the coalescence of different orientational domains and lateral-overgrown GaN. This evolution mechanism of TDs was different from that of traditional ELOG technology or one-step ELOG (1S-ELOG) technology using a two-dimensional (2D) material as a mask.

  2. Boas Goes to Atlanta

    National Research Council Canada - National Science Library

    2008-01-01

    Sharing an antiracist agenda, Boas and Du Bois were struggling to institutionalize their arguments by furthering research to counter scientific racism and by participating in public discussions to promote their ideas...

  3. GA -BP 神经网络模型在地区工业技术创新能力评价中的应用%Application of BP Neural Network and Genetic Algorithm on Technological Innovation Capability Evaluation of Regional Enterprises

    Institute of Scientific and Technical Information of China (English)

    张永礼; 武建章

    2015-01-01

    At present , most technological innovation ability evaluation methods are established on the basis of the linear model , and the factors that affect the technological innovation capability are many , the multicollinearity may exist among variables . According to the above two reasons , the GA-BP neural network model was proposed in this paper . Genetic algorithm (GA) optimized the BP neural net-work model in the following aspects: ①neural network has the strong ability of dealing with nonlinear system . It avoided the disadvantages of the linear model . ②In order to remove the multicollinearity , the genetic algorithm was used to reduce evaluation index dimension . ③BP neural network used gradient descent algorithm that modified weights and thresholds , and it was easy to fall into local optimal solution . Genetic algorithm was introduced to search the BP neural network weights and thresholds in global scope . Finally , the technical innovation data of industrial enterprises above designated size in the 31 provinces , and cities were selected from year 2008 to 2013 , 124 of them are regard as training samples , others as testing samples . Empirical conclusion shows that forecast accuracy of GA -BP neural network is higher than BP neural network .%针对当前技术创新能力评价方法大多建立在线性模型的基础上,且技术创新能力影响因素较多,可能存在多重共线性的缺陷,本文提出了遗传算法优化的BP神经网络模型。GA-BP神经网络模型在以下几方面做出了改进:①利用了神经网络强大的非线性关系映射能力,避免了传统线性模型的缺陷。②利用遗传算法对评价指标进行了降维,去除了多重共线性。③使用遗传算法从全局搜寻BP神经网络权值和阀值向量,优化了BP神经网络模型,避免了BP神经网络由于使用梯度下降算法,容易陷入局部最优解的缺陷。本文最后选取2008~2013年全国31个省市规模

  4. Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

    OpenAIRE

    Hashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, Hideki

    2001-01-01

    Chemical and electrical properties of the surfaces of GaN and GaN/AlGaN heterostructures were systematically investigated by x-ray photoelectron spectroscopy (XPS), capacitance–voltage, and current–voltage measurements. From in situ XPS study, relatively smaller band bending of 0.6 eV was seen at the GaN (2×2) surface grown by radio frequency-assisted molecular beam epitaxy on the metalorganic vapor phase epitaxy GaN template. After exposing the sample surface to air, strong band bending took...

  5. InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes

    OpenAIRE

    Krishnamoorthy, Sriram; Akyol, Fatih; Rajan, Siddharth

    2014-01-01

    InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light output power are measured in tunnel junction LED. A low resistance of 5 x 10-4 ohm cm2 was measur...

  6. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    Directory of Open Access Journals (Sweden)

    P. C. Chang

    2014-01-01

    Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  7. Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Benton, J.; Bai, J.; Wang, T., E-mail: t.wang@sheffield.ac.uk [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2014-12-01

    We report a cost-effective approach to the fabrication of GaN based nanoporous structure for applications in renewable hydrogen production. Photoelectrochemical etching in a KOH solution has been employed to fabricate both GaN and InGaN/GaN nanoporous structures with pore sizes ranging from 25 to 60 nm, obtained by controlling both etchant concentration and applied voltage. Compared to as-grown planar devices the nanoporous structures have exhibited a significant increase of photocurrent with a factor of up to four times. An incident photon conversion efficiency of up to 46% around the band edge of GaN has been achieved.

  8. High quality superconducting NbN thin films on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Marsili, Francesco; Fiore, Andrea [COBRA Research Institute, Eindhoven University of Technology, PO Box 513, NL-5600MB Eindhoven (Netherlands); Gaggero, Alessandro; Leoni, Roberto [Istituto di Fotonica e Nanotecnologie (IFN), CNR, via Cineto Romano 42, I-00156 Roma (Italy); Li, Lianhe H; Surrente, Alessandro [Institute of Photonics and Quantum Electronics (IPEQ), Ecole Polytechnique Federale de Lausanne (EPFL), Station 3, CH-1015 Lausanne (Switzerland); Levy, Francis, E-mail: francesco.marsili@epfl.c [Institute of Condensed Matter Physics (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), Station 3, CH-1015 Lausanne (Switzerland)

    2009-09-15

    A very promising way to increase the detection efficiency of nanowire superconducting single-photon detectors (SSPDs) consists in integrating them with advanced optical structures such as distributed Bragg reflectors (DBRs) and optical waveguides. This requires transferring the challenging SSPD technology from the usual substrates, i.e. sapphire and MgO, to an optical substrate like GaAs, on which DBRs and waveguides can be easily obtained. Therefore, we optimized the deposition process of few-nm thick superconducting NbN films on GaAs and AlAs/GaAs-based DBRs at low temperatures (substrate temperature T{sub S} = 400 {sup 0}C), in order to prevent As evaporation. NbN films ranging from 150 to 3 nm in thickness were then deposited on single-crystal MgO, GaAs, MgO-buffered GaAs and DBRs by current-controlled DC magnetron sputtering (planar, circular, balanced configuration) of Nb in an Ar+N{sub 2} plasma. 5.5 nm thick NbN films on GaAs exhibit T{sub C} = 10.7 K, {Delta}T{sub C} = 1.1 K and RRR = 0.7. The growth of such high quality thin NbN films on GaAs and DBRs has never been reported before.

  9. The influence of Fe doping on the surface topography of GaN epitaxial material

    Science.gov (United States)

    Lei, Cui; Haibo, Yin; Lijuan, Jiang; Quan, Wang; Chun, Feng; Hongling, Xiao; Cuimei, Wang; Jiamin, Gong; Bo, Zhang; Baiquan, Li; Xiaoliang, Wang; Zhanguo, Wang

    2015-10-01

    Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 1019 cm-3. High resistivity GaN epitaxial material which is 1 × 109 Ω·cm is achieved. Project supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences (No. YYY-0701-02), the National Natural Science Foundation of China (Nos. 61204017, 61334002), the State Key Development Program for Basic Research of China, and the National Science and Technology Major Project.

  10. A new approach to grow C-doped GaN thick epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Gogova, D.; Siche, D.; Albrecht, M.; Irmscher, K.; Rost, H.J.; Fornari, R. [Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin (Germany); Rudko, G.Yu. [V. Lashkarev Institute of Semiconductors Physics, 03028 Kiev (Ukraine)

    2011-07-15

    In this study we employ a new method for growth of carbon-doped wurtzite crystalline GaN (GaN:C) based on vapour phase transport of Ga by the pseudohalide hydrogen cyanide HCN. GaN:C layers with a thicknesses from 10 to 100 {mu}m and up to 19 mm in size were grown from gallium melt and ammonia as feeding materials in a carbon-containing equipment. The properties of the GaN:C layers were characterized by low-temperature photoluminescence (LTPL), High-Resolution X-ray Diffraction (HRXRD), Secondary Ion Mass Spectrometry (SIMS) and room-temperature Hall effect and Raman spectroscopy measurements. HRXRD studies demonstrated good crystalline quality of the thick GaN layers (the Rocking curve FWHMs are 570 arcsec for the (0004) reflection and 561 arcsec for the (10-14) reflection for 10 {mu}m thick samples). The LTPL and Raman spectroscopy confirmed the good optical and structural quality of the material. The carbon concentration measured by SIMS was 6x10{sup 18} cm{sup -3}, however, the room-temperature Hall effect experiments showed n-type conductivity. Carbon acceptor incorporation into GaN (from the transport agent) as well as the reason of its electrical overcompensation by unintentional impurities like oxygen and silicon is discussed. Ways of technological process improvement are proposed. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  12. Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Xing, Huili; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-10-19

    By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

  13. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

    Science.gov (United States)

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-04-22

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

  14. GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD

    Science.gov (United States)

    Heidelberger, Christopher; Fitzgerald, Eugene A.

    2017-01-01

    Heterojunction bipolar transistors with GaAsxP1-x bases and collectors and InyGa1-yP emitters were grown on GaAs substrates via metalorganic chemical vapor deposition, fabricated using conventional techniques, and electrically tested. Four different GaAsxP1-x compositions were used, ranging from x = 0.825 to x = 1 (GaAs), while the InyGa1-yP composition was adjusted to remain lattice-matched to the GaAsP. DC gain close to or exceeding 100 is measured for 60 μm diameter devices of all compositions. Physical mechanisms governing base current and therefore current gain are investigated. The collector current is determined not to be affected by the barrier caused by the conduction band offset between the InGaP emitter and GaAsP base. While the collector current for the GaAs/InGaP devices is well-predicted by diffusion of electrons across the quasi-neutral base, the collector current of the GaAsP/InGaP devices exceeds this estimate by an order of magnitude. This results in higher transconductance for GaAsP/InGaP than would be estimated from known material properties.

  15. GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

    Energy Technology Data Exchange (ETDEWEB)

    Li Zaijin; Hu Liming; Wang Ye; Yang Ye; Peng Hangyu; Zhang Jinlong; Qin Li; Liu Yun; Wang Lijun, E-mail: lizaijin@126.co [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2010-03-15

    A novel process for the wet cleaning of GaAs surface is presented. It is designed for technological simplicity and minimum damage generated within the GaAs surface. It combines GaAs cleaning with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provided. Revolving ultrasonic atomization technology is adopted in the cleaning process. At first impurity removal is achieved by organic solvents; second NH{sub 4}OH:H{sub 2}O{sub 2}:H{sub 2}O = 1:1:10 solution and HCl: H{sub 2}O{sub 2}:H{sub 2}O = 1:1:20 solution in succession to etch a very thin GaAs layer, the goal of the step is removing metallic contaminants and forming a very thin oxidation layer on the GaAs wafer surface; NH{sub 4}OH:H{sub 2}O = 1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by the operation of the GaAs wafer. Characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy. Metal-contamination and surface morphology was observed by a total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the cleaned surface is without contamination or metal contamination. Also, the GaAs substrates surface is very smooth for epitaxial growth using the rotary ultrasonic atomization technology. (semiconductor technology)

  16. MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires

    Science.gov (United States)

    Sladek, K.; Klinger, V.; Wensorra, J.; Akabori, M.; Hardtdegen, H.; Grützmacher, D.

    2010-02-01

    Two different fabrication approaches were compared to obtain conductive GaAs nanowires: on one hand by modulation doping of GaAs/AlGaAs core/shell nanowires, on the other hand by Si-doping of GaAs nanowires. Modulation doped GaAs/AlGaAs core-shell nanowires were grown by selective area metal organic vapor phase epitaxy (MOVPE) on GaAs (1 1 1) substrates. The influences of growth parameters and mask design on aspect ratio of the core structures were investigated. The specialty of this study was that the growth mode was switched from vertical GaAs wire growth to the AlGaAs conformal shell overgrowth by intentionally changing the growth chemistry from the use of a more stable group III source - trimethylgallium (TMGa) to more easily decomposed sources - the alternative sources triethylgallium (TEGa) and dimethylethylaminealane (DMEAAl). It was found that the diameter and length of the core structures strongly depend on the arsenic partial pressure and growth temperature as well as mask design. The uniformity of shell growth is also influenced by the mask design. Additionally an alternative approach for the production of conductive GaAs nanowires was under study. To this end, the influence of Si-doping on GaAs core growth was investigated. It was found that doping has a detrimental impact on growth morphology leading to an undesirable enhanced growth rate on the nanowire side facets.

  17. Status and Advances of Researches on GA 20-oxidases

    Institute of Scientific and Technical Information of China (English)

    Li Wei; Chen Xiaoyang; Li Hui; Guo Hai

    2003-01-01

    GA 20-oxidase, the most important limiting enzyme, can catalyze a series of oxidization of GA biosynthesis pathwayfrom GA12 to GA9 and from GA53 to GA20 in the higher plants. This paper reviews the studies on the characters of GA 20-oxidase,the gene and the protein of GA 20-oxidase and the regulation of GA 20-oxidase gene expression in recent years. At the same time,the prospects for the gene transformation of GA 20-oxidase in agriculture, forestry and horticulture are also discussed.

  18. Development of GaAs Detectors for Physics at the LHC

    CERN Multimedia

    Chu, Zhonghua; Krais, R; Rente, C; Syben, O; Tenbusch, F; Toporowsky, M; Xiao, Wenjiang; Cavallini, A; Fiori, F; Edwards, M; Geppert, R; Goppert, R; Haberla, C; Hornung, M F; Irsigler, R; Rogalla, M; Beaumont, S; Raine, C; Skillicorn, I; Margelevicius, J; Meshkinis, S; Smetana, S; Jones, B; Santana, J; Sloan, T; Zdansky, K; Alexiev, D; Donnelly, I J; Canali, C; Chiossi, C; Nava, F; Pavan, P; Kubasta, J; Tomiak, Z; Tchmil, V; Tchountonov, A; Tsioupa, I; Dogru, M; Gray, R; Hou, Yuqian; Manolopoulos, S; Walsh, S; Aizenshtadt, G; Budnitsky, D L; Gossen, A; Khludkov, S; Koretskaya, O B; Okaevitch, L; Potapov, A; Stepanov, V E; Tolbanov, O; Tyagev, A; Matulionis, A; Pozela, J; Kavaliauskiene, G; Kazukauskas, V; Kiliulis, R; Rinkevicius, V; Slenys, S; Storasta, J V

    2002-01-01

    % RD-8 Development of GaAs Detectors for Physics at the LHC \\\\ \\\\The aims of the collaboration are to investigate the available material options, performance and limitations of simple pad, pixel and microstrip GaAs detectors for minimum ionising particles with radiation hardness and speed which are competitive with silicon detectors. This new technology was originally developed within our university laboratories but now benefits from increasing industrial interest and collaboration in detector fabrication. Initial steps have also been taken towards the fabrication of GaAs preamplifiers to match the detectors in radiation hardness. The programme of work aims to construct a demonstration detector module for an LHC forward tracker based on GaAs.

  19. Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

    Science.gov (United States)

    Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

    2017-06-01

    The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

  20. Exploiting Satellite Remote-Sensing Data in Fine Particulate Matter Characterization for Serving the Environmental Public Health Tracking Network (EPHTN): The HELIX-Atlanta Experience and NPOESS Implications

    Science.gov (United States)

    Al-Hamdan, Mohammad Z.; Crosson, William L.; Limaye, Ashutosh S.; Rickman, Douglas L.; Quattrochi, Dale A.; Estes, Maurice G.; Qualters, Judith R.; Sinclair, Amber H.; Tolsma, Dennis D.; Adeniyi, Kafayat A.

    2008-01-01

    As part of the U.S. National Environmental Public Health Tracking Network (EPHTN), the National Center for Environmental Health (NCEH) at the U.S. Centers for Disease Control and Prevention (CDC) led a project in collaboration with the National Aeronautics and Space Administration (NASA) Marshall Space Flight Center (MSFC) called Health and Environment Linked for Information Exchange (HELIX-Atlanta). Under HELIX-Atlanta, pilot projects were conducted to develop methods to better characterize exposure; link health and environmental datasets; and analyze spatial/temporal relationships. This paper describes and demonstrates different techniques for surfacing daily environmental hazards data of particulate matter with aerodynamic diameter less than or equal to 2.5 micrometers (PM(sub 2.5) for the purpose of integrating respiratory health and environmental data for the CDC's pilot study of HELIX-Atlanta. It describes a methodology for estimating ground-level continuous PM(sub 2.5) concentrations using spatial surfacing techniques and leveraging NASA Moderate Resolution Imaging Spectrometer (MODIS) data to complement the U.S. Environmental Protection Agency (EPA) ground observation data. The study used measurements of ambient PM(sub 2.5) from the EPA database for the year 2003 as well as PM(sub 2.5) estimates derived from NASA's MODIS data. Hazard data have been processed to derive the surrogate exposure PM(sub 2.5) estimates. The paper has shown that merging MODIS remote sensing data with surface observations of PM(sub 2.5), may provide a more complete daily representation of PM(sub 2.5), than either data set alone would allow, and can reduce the errors in the PM(sub 2.5) estimated surfaces. Future work in this area should focus on combining MODIS column measurements with profile information provided by satellites like the National Polar-orbiting Operational Environmental Satellite System (NPOESS). The Visible Infrared Imager/Radiometer Suite (VIIRS) and the Aerosol

  1. InGaN High-Temperature Photovoltaic Cells

    Science.gov (United States)

    Starikov, David

    2015-01-01

    This Phase II project developed Indium-Gallium-Nitride (InGaN) photovoltaic cells for high-temperature and high-radiation environments. The project included theoretical and experimental refinement of device structures produced in Phase I as well as modeling and optimization of solar cell device processing. The devices have been tested under concentrated air mass zero (AM0) sunlight, at temperatures from 100 degC to 250 degC, and after exposure to ionizing radiation. The results are expected to further verify that InGaN can be used for high-temperature and high-radiation solar cells. The large commercial solar cell market could benefit from the hybridization of InGaN materials to existing solar cell technology, which would significantly increase cell efficiency without relying on highly toxic compounds. In addition, further development of this technology to even lower bandgap materials for space applications would extend lifetimes of satellite solar cell arrays due to increased radiation hardness. This could be of importance to the Departmentof Defense (DoD) and commercial satellite manufacturers.

  2. Gallium Arsenide (GaAs) Quantum Photonic Waveguide Circuits

    CERN Document Server

    Wang, Jianwei; Jiang, Pisu; Bonneau, Damien; Engin, Erman; Silverstone, Joshua W; Lermer, Matthias; Beetz, Johannes; Kamp, Martin; Hofling, Sven; Tanner, Michael G; Natarajan, Chandra M; Hadfield, Robert H; Dorenbos, Sander N; Zwiller, Val; O'Brien, Jeremy L; Thompson, Mark G

    2014-01-01

    Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9 +/- 1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6 +/- 1.3% and 84.4 +/- 1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This w...

  3. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    Science.gov (United States)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  4. Simulation of polarization effects in AlGaN/GaN heterojunction

    Institute of Scientific and Technical Information of China (English)

    LI; Na; ZHAO; Degang; YANG; Hui

    2004-01-01

    A method for introducing polarization effects in the simulation of GaN-based heterojunction devices is proposed. A δ doping layer is inserted at the interface of heterojunction and the ionized donors or acceptors act as polarization induced fixed charges. Thus polarization effects can be taken into account in a traditional device simulator. Ga-face and N-face single AlGaN/GaN heterostructures are simulated, and the simulation results show that carrier confinement takes place only in the former structure while not in the latter one. The sheet density of free electrons at the interface of Ga-face AlGaN/GaN increases with the Al composition and the thickness of AlGaN. The consistence of simulation results with the experiments and calculations reported elsewhere shows that this method can effectively introduce polarization effects in the simulation of GaN-based heterojunction devices.

  5. Gate Leakage Current Reduction With Advancement of Graded Barrier AlGaN/GaN HEMT

    Directory of Open Access Journals (Sweden)

    Palash Das

    2011-01-01

    Full Text Available The gate leakage current reduction solution of AlGaN/GaN HEMT device issue has been addressed in this paper with compositional grading of AlGaN barrier layer. This work is also conjugated with the critical thickness limitation of heterostructure material growth. Hence, critical thickness calculation of AlGaN over GaN has been kept in special view. 1D Schrodinger and Poisson solver was used to calculate the 2DEG concentration and effective location to use it in the ATLAS device simulator for the predictions. The proposed Al0.50Ga0.50N/Al0.35Ga0.65N/Al0.20Ga0.80N/GaN HEMT structure exhibits the leakage current of the order of around 15 nA/mm at gate voltage of 1 V.

  6. Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns

    Science.gov (United States)

    Kong, X.; Li, H.; Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.; Calleja, E.; Draxl, C.; Trampert, A.

    2016-02-01

    We report on the formation of polarity inversion in ordered (In,Ga)N/GaN nanocolumns grown on a Ti-masked GaN-buffered sapphire substrate by plasma assisted molecular beam epitaxy. High-resolution transmission electron microscopy and electron energy-loss spectroscopy reveal a stacking fault-like planar defect at the homoepitaxial GaN interface due to Ti incorporation, triggering the generation of N-polar domains in Ga-polar nanocolumns. Density functional theory calculations are applied to clarify the atomic configurations of a Ti monolayer occupation on the GaN (0002) plane and to prove the inversion effect. The polarity inversion leads to an enhanced indium incorporation in the subsequent (In,Ga)N segment of the nanocolumn. This study provides a deeper understanding of the effects of Ti mask in the well-controlled selective area growth of (In,Ga)N/GaN nanocolumns.

  7. Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics

    Science.gov (United States)

    Mikulics, M.; Winden, A.; Marso, M.; Moonshiram, A.; Lüth, H.; Grützmacher, D.; Hardtdegen, H.

    2016-07-01

    Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nW and 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics.

  8. Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates

    Science.gov (United States)

    Leach, J. H.; Biswas, N.; Paskova, T.; Preble, E. A.; Evans, K. R.; Wu, M.; Ni, X.; Li, X.; Özgür, Ü.; Morkoç, H.

    2011-02-01

    Bulk GaN substrates promise to bring the full potential of nitride-based devices to bear since they offer a low thermal and lattice mismatched alternative to foreign substrates for epitaxial growth. However, due to the high cost and low availability of bulk GaN substrates, effects such as surface misorientation (offcut), surface polishing, and preparation of such substrates on subsequent epitaxy are still not well understood. As such, AlGaN/GaN heterostructures with nominal Al compositions of 25% were grown by MOCVD on semi-insulating bulk GaN substrates with offcuts ranging from 0.05 to 1.95° in the m-direction (10 10) to attempt to determine the optimal offcut for bulk GaN substrates for AlGaN-based HFET devices. X-ray diffraction (XRD) studies indicate that the Al composition does not vary with offcut, however reciprocal space mapping shows evidence of strain relaxation of the AlGaN in samples grown on substrates with offcut >1.1°. Additionally, we observed a minimum in sheet resistance of the 2DEGs for substrates with offcuts near 0.5°, arising from higher mobilities in these samples. Evidence of an optimal substrate misorientation is important for AlGaN-based devices grown on bulk GaN substrates.

  9. Semiconductor technology program: Progress briefs

    Science.gov (United States)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  10. Ultraviolet Phototransistors on AlGaN/GaN Heterostructures

    Institute of Scientific and Technical Information of China (English)

    CHEN Chen; JIANG Wen-Hai; REN Chun-Jiang; LI Zhong-Hui; JIAO Gang; DONG Xun; CHEN Tang-Sheng

    2007-01-01

    We report on the fabrication and characterization of phototransistors based on AlGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions: as a high electron mobility transistor (HEMT) and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170 mS/mm, while the minimum cutoff frequency fT and the maximum oscillation frequency fm axe 19 and 35 GHz, respectively.As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude,and a responsivity as high as 1700 A/W at the wavelength of 362nm.

  11. InGaN/GaN Nanowire LEDs and Lasers

    KAUST Repository

    Zhao, Chao

    2016-01-01

    The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.

  12. High Quantum Efficiency AlGaN/InGaN Photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Buckley, James H; Leopold, Daniel

    2009-11-24

    High efficiency photon counting detectors in use today for high energy particle detection applications have a significant spectral mismatch with typical sources and have a number of practical problems compared with conventional bialkali photomultiplier tubes. Numerous high energy physics experiments that employ scintillation light detectors or Cherenkov detectors would benefit greatly from photomultipliers with higher quantum efficiencies. The need for extending the sensitivity of photon detectors to the blue and UV wavebands comes from the fact that both Cherenkov light and some scintillators have an emission spectrum which is peaked at short wavelengths. This research involves the development of high quantum efficiency, high gain, UV/blue photon counting detectors based on AlGaN/InGaN photocathode heterostructures grown by molecular beam epitaxy (MBE). The work could eventually lead to nearly ideal light detectors with a number of distinct advantages over existing technologies for numerous applications in high-energy physics and particle astrophysics. Potential advantages include much lower noise detection, better stability and radiation resistance than other cathode structures, very low radioactive background levels for deep underground experiments and high detection efficiency of individual UV-visible photons. We are also working on the development of photocathodes with intrinsic gain, initially improving the detection efficiency of hybrid semiconductor-vacuum tube devices, and eventually leading to an all-solid-state photomultiplier device.

  13. Lattice location of Mn in GaAs and GaN

    CERN Document Server

    De Coster, Arnaud; Vantomme, André; Temst, Kristiaan

    The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the linkage of magnetic and conducting properties and with an eye to potential applications in computer technology. While the presence of semiconducting properties and magnetism in a given material is not out of the ordinary, DMS materials stand out because the charge carriers actually mediate between magnetic moments in the lattice, causing the ferromagnetic ordering. These magnetic moments and charge carriers are supplied by transition-metal (TM) dopants in a classic semiconductor. The location where these dopants are incorporated will determine if they will act as either an acceptor or donor and how they will couple to other magnetic moments. Hence, in order to achieve a better understanding of DMS, accurate knowledge of the lattice location the TM takes up in the crystal is vital. In this thesis the lattice location of Mn in GaAs and GaN is studied, two model materials f...

  14. Lattice location of Mn in GaAs and GaN

    CERN Document Server

    De Coster, Arnaud; Vantomme, André; Temst, Kristiaan

    The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the link between magnetic and conducting properties and with an eye to potential applications in computer technology. While the presence of semiconducting properties and magnetism in a given material is not out of the ordinary, DMS materials stand out because the charge carriers actually mediate between magnetic moments in the lattice, causing the ferromagnetic ordering. These magnetic moments and charge carriers are supplied by transition-metal (TM) dopants in a classic semiconductor. The location where these dopants are incorporated will determine if they will act as either an acceptor or donor and how they will couple to other magnetic moments. Hence, in order to achieve a better understanding of DMS, accurate knowledge of the lattice location the TM takes up in the crystal is vital. In this thesis the lattice location of Mn in GaAs and GaN is studied, two model materials...

  15. Medium energy proton radiation damage to (AlGa)As-GaAs solar cells

    Science.gov (United States)

    Loo, R. Y.; Kamath, G. S.; Knechtli, R. C.

    1982-01-01

    The performance of (AlGa)As-GaAs solar cells irradiated by medium energy 2, 5, and 10 MeV protons was evaluated. The Si cells without coverglass and a number of GaAs solar cells with 12 mil coverglass were irradiated simultaneously with bare GaAs cells. The cell degradation is directly related to the penetration of depth of protons with GaAs. The influence of periodic and continuous thermal annealing on the GaAs solar cells was investigated.

  16. SEMICONDUCTOR DEVICES: AlGaN/GaN double-channel HEMT

    Science.gov (United States)

    Si, Quan; Yue, Hao; Xiaohua, Ma; Pengtian, Zheng; Yuanbin, Xie

    2010-04-01

    The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied.

  17. Blue light emission from the heterostructured ZnO/InGaN/GaN

    OpenAIRE

    Wang, Ti; WU Hao; Wang, Zheng; Chen, Chao; Liu, Chang

    2013-01-01

    ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity r...

  18. Brittle-Ductile Relaxation Kinetics of Strained AlGaN/GaN

    Energy Technology Data Exchange (ETDEWEB)

    CHASON, E.; FLORO, JERROLD A.; FOLLSTAEDT, DAVID M.; HAN, JUNG; HEARNE, SEAN JOSEPH; LEE, STEPHEN R.; TSONG, I.S.T.

    1999-10-05

    The authors have directly measured the stress evolution during metal organic chemical vapor deposition of AlGaN/GaN heterostructures on sapphire. In situ stress measurements were correlated with ex situ microstructural analysis to directly determine a critical thickness for cracking and the subsequent relaxation kinetics of tensile-strained Al{sub x}Ga{sub 1{minus}x}N on GaN. Cracks appear to initiate the formation of misfit dislocations at the AlGaN/GaN interface, which account for the majority of the strain relaxation.

  19. Spatial Growth Modeling and High Resolution Remote Sensing Data Coupled with Air Quality Modeling to Assess the Impact of Atlanta, Georgia on the Local and Regional Environment

    Science.gov (United States)

    Quattrochi, Dale A.; Estes, Maurice G., Jr.; Crosson, William; Johnson, Hoyt; Khan, Maudood

    2006-01-01

    The growth of cities, both in population and areal extent, appears as an inexorable process. Urbanization continues at a rapid rate, and it is estimated that by the year 2025, 60 percent of the world s population will live in cities. Urban expansion has profound impacts on a host of biophysical, environmental, and atmospheric processes within an urban ecosystems perspective. A reduction in air quality over cities is a major result of these impacts. Because of its complexity, the urban landscape is not adequately captured in air quality models such as the Community Multiscale Air Quality (CMAQ) model that is used to assess whether urban areas are in attainment of EPA air quality standards, primarily for ground level ozone. This inadequacy of the CMAQ model to sufficiently respond to the heterogeneous nature of the urban landscape can impact how well the model predicts ozone levels over metropolitan areas and ultimately, whether cities exceed EPA ozone air quality standards. We are exploring the utility of high-resolution remote sensing data and urban spatial growth modeling (SGM) projections as improved inputs to a meteorological/air quality modeling system focusing on the Atlanta, Georgia metropolitan area as a case study. These growth projections include business as usual and smart growth scenarios out to 2030. The growth projections illustrate the effects of employing urban heat island mitigation strategies, such as increasing tree canopy and albedo across the Atlanta metro area, which in turn, are used to model how air temperature can potentially be moderated as impacts on elevating ground-level ozone, as opposed to not utilizing heat island mitigation strategies. The National Land Cover Dataset at 30m resolution is being used as the land use/land cover input and aggregated to the 4km scale for the MM5 mesoscale meteorological model and the CMAQ modeling schemes. Use of these data has been found to better characterize low density/suburban development as compared

  20. Remote Sensing and Spatial Growth Modeling Coupled with Air Quality Modeling to Assess the Impact of Atlanta, Georgia on the Local and Regional Environment

    Science.gov (United States)

    Quattrochi, Dale A.; Estes, Maurice G., Jr.; Crosson, William; Khan, Maudood

    2006-01-01

    The growth of cities, both in population and areal extent, appears as an inexorable process. Urbanization continues at a rapid rate, and it is estimated that by the year 2025, 80 percent of the world s population will live in cities. Directly aligned with the expansion of cities is urban sprawl. Urban expansion has profound impacts on a host of biophysical, environmental, and atmospheric processes. A reduction in air quality over cities is a major result of these impacts. Strategies that can be directly or indirectly implemented to help remediate air quality problems in cities and that can be accepted by political decision makers and the general public are now being explored to help bring down air pollutants and improve air quality. The urban landscape is inherently complex and this complexity is not adequately captured in air quality models, particularly the Community Multiscale Air Quality (CMAQ) model that is used to assess whether urban areas are in attainment of EPA air quality standards, primarily for ground level ozone. This inadequacy of the CMAQ model to sufficiently respond to the heterogeneous nature of the urban landscape can impact how well the model predicts ozone pollutant levels over metropolitan areas and ultimately, whether cities exceed EPA ozone air quality standards. We are exploring the utility of high-resolution remote sensing data and urban spatial growth modeling (SGM) projections as improved inputs to the meteorology component of the CMAQ model focusing on the Atlanta, Georgia metropolitan area as a case study. These growth projections include "business as usual" and "smart growth" scenarios out to 2030. The growth projections illustrate the effects of employing urban heat island mitigation strategies, such as increasing tree canopy and albedo across the Atlanta metro area, which in turn, are used to model how ozone and air temperature can potentially be moderated as impacts on elevating ground-level ozone, as opposed to not utilizing heat

  1. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers

    Science.gov (United States)

    2015-02-01

    Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers by Randy P Tompkins and Danh Nguyen Approved for...High Electron Mobility Transistor (HEMT) Wafers by Randy P. Tompkins Sensors and Electron Devices Directorate Danh Nguyen Lehighton...Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  2. Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies

    Science.gov (United States)

    Gladysiewicz, M.; Janicki, L.; Misiewicz, J.; Sobanska, M.; Klosek, K.; Zytkiewicz, Z. R.; Kudrawiec, R.

    2016-09-01

    Polarization engineering of GaN-based heterostructures opens a way to develop advanced transistor heterostructures, although measurement of the electric field in such heterostructures is not a simple task. In this work, contactless electroreflectance (CER) spectroscopy has been applied to measure the electric field in GaN-based heterostructures. For a set of GaN(d  =  0, 5, 15, and 30 nm)/AlGaN(20 nm)/GaN(buffer) heterostructures a decrease of electric field in the GaN(cap) layer from 0.66 MV cm-1 to 0.27 MV cm-1 and an increase of the electric field in the AlGaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 have been observed with the increase in the GaN(cap) thickness from 5-30 nm. For a set of GaN(20 nm)/AlGaN(d  =  10, 20, 30, and 40 nm)/GaN(buffer) heterostructures a decrease of the electric field in the AlGaN layer from 1.77 MV cm-1 to 0.64 MV cm-1 and an increase of the electric field in the GaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 were observed with the increase in the AlGaN thickness from 10-40 nm. To determine the distribution of the electric field in these heterostructures the Schrödinger and Poisson equations are solved in a self-consistent manner and matched with experimental data. It is shown that the built-in electric field in the GaN(cap) and AlGaN layers obtained from measurements does not reach values of electric field resulting only from polarization effects. The measured electric fields are smaller due to a screening of polarization effects by free carriers, which are inhomogeneously distributed across the heterostructure and accumulate at interfaces. The results clearly demonstrate that CER measurements supported by theoretical calculations are able to determine the electric field distribution in GaN-based heterostructures quantitatively, which is very important for polarization engineering in this material system.

  3. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    OpenAIRE

    Wang Yongjin; Hu Fangren; Hane Kazuhiro

    2011-01-01

    Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place wit...

  4. Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre [Laboratoire Charles Coulomb – UMR 5221, CNRS and University Montpellier, Case courier 074, 34095 Montpellier Cedex 5 (France); Damilano, Benjamin; Lekhal, Kaddour; De Mierry, Philippe [CRHEA-CNRS Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, rue Bernard Gregory, 06560 Valbonne (France)

    2015-09-21

    We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

  5. GaN Initiative for Grid Applications (GIGA)

    Energy Technology Data Exchange (ETDEWEB)

    Turner, George [MIT Lincoln Lab., Lexington, MA (United States)

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and

  6. High-temperature characteristics of AixGa1-xN/GaN Schottky diodes

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiaoling; Li Fei; Lv Changzhi; Xie Xuesong; Li Ying; Mohammad S N

    2009-01-01

    High-temperature characteristics of the metal/AlxGa1_xN/GaN M/S/S (M/S/S) diodes have been studied with current-voltage (I-V) and capacitance-voltage (C-V) measurements at high temperatures. Due to the presence of the piezoelectric polarization field and a quantum well at the AIxGa1_xN/GaN interface, the AIxGa1_xN/GaNdiodes show properties distinctly different from those of the AIxGa1_xN diodes. For the AIxGa1_xN/GaN diodes, an increase in temperature accompanies an increase in barrier height and a decrease in ideality factor, while the AIxGa1_xN diodes are opposite. Furthermore, at room temperature, both reverse leakage current and reverse break-down voltage are superior for the AIxGa1_xN/GaN diodes to those for the AIxGa1_xN diodes.

  7. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Amano, Hiroshi [Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University (Japan)

    2015-06-15

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Growth of dilute nitrides and 1.3 {mu}m edge emitting lasers on GaAs by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S.M.; Adolfsson, G.; Zhao, H.; Song, Y.X.; Sadeghi, M.; Gustavsson, J.; Modh, P.; Haglund, Aa.; Westbergh, P.; Larsson, A. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg (Sweden)

    2011-05-15

    In this paper, we report recent progresses on growth of dilute nitrides and 1.3 {mu}m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 {mu}m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 {mu}m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks

    Science.gov (United States)

    Sims, P. E.; Wallace, P. M.; Xu, Chi; Poweleit, C. D.; Claflin, B.; Kouvetakis, J.; Menéndez, J.

    2017-09-01

    Monocrystalline alloys of GaAs and Ge with compositions (GaAs)yGe5-2y have been synthesized following a chemical vapor deposition approach that promotes the incorporation of Ga and As atoms as isolated donor-acceptor pairs. The structural and optical properties show distinct behavior relative to (GaAs)1-xGe2x counterparts produced by conventional routes. Strong band gap photoluminescence is observed in the 0.5-0.6 eV range for samples whose compositions approach the GaAsGe3 limit for isolated Ga-As pairs. In such samples, the Ge-like Raman modes appear at higher frequencies and are considerably narrower than those observed in samples with higher Ge concentrations. These results suggest that the growth mechanism may favor the formation of ordered phases comprising Ga-As-Ge3 tetrahedra. In contrast with the diamond-to-zincblende ordering transition previously reported for III-V-IV alloys, ordered structures built from Ga-As-Ge3 tetrahedra feature III-III and V-V pairs as third-nearest neighbors, and therefore both the III- and V-components are equally present in each of two fcc sublattices of the average diamond-like structure. These bonding arrangements likely lead to the observed optical response, indicating potential applications of these materials in mid-IR technologies integrated on Si.

  10. The multiscale simulation of metal organic chemical vapor deposition growth dynamics of GaInP thin film

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    As a Group III–V compound, GaInP is a high-efficiency luminous material. Metal organic chemical vapor deposition (MOCVD) technology is a very efficient way to uniformly grow multi-chip, multilayer and large-area thin film. By combining the computational fluid dynamics (CFD) and the kinetic Monte Carlo (KMC) methods with virtual reality (VR) technology, this paper presents a multiscale simulation of fluid dynamics, thermodynamics, and molecular dynamics to study the growth process of GaInP thin film in a vertical MOCVD reactor. The results of visualization truly and intuitively not only display the distributional properties of the gas’ thermal and flow fields in a MOCVD reactor but also display the process of GaInP thin film growth in a MOCVD reactor. The simulation thus provides us with a fundamental guideline for optimizing GaInP MOCVD growth.

  11. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    Energy Technology Data Exchange (ETDEWEB)

    Kalentyeva, I. L., E-mail: vikhrova@nifti.unn.ru; Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  12. A novel oxidation-based wet etching method for AlGaN/GaN heterostructures

    Institute of Scientific and Technical Information of China (English)

    Cai Jinbao; Wang Jinyan; Liu Yang; Xu Zhe; Wang Maojun; Yu Min; Xie Bing

    2013-01-01

    A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation followed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxidation above 700 ℃ could be etched off in a homothermal (70 ℃) KOH solution while the KOH solution had no etching effects on the region of the A1GaN/GaN heterostructure protected by a SiO2 layer during the oxidation process.A groove structure with 150 nm step depth on an AlGaN/GaN heterostructure was formed after 8 h thermal oxidation at 900 ℃ followed by 30 min treatment in 70 ℃ KOH solution.As the oxidation time increases,the etching depth approaches saturation and the roughness of the etched surface becomes much better.The physical mechanism of this phenomenon is also discussed.

  13. GaAsP solar cells on GaP/Si with low threading dislocation density

    Science.gov (United States)

    Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan; Lee, Minjoo Larry

    2016-07-01

    GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 108 cm-2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0-4.6 × 106 cm-2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

  14. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions...

  15. Second annual clean coal technology conference: Proceedings. Volume 1

    Energy Technology Data Exchange (ETDEWEB)

    1993-09-09

    The Second Annual Clean Coal Technology Conference was held at Atlanta, Georgia, September 7--9, 1993. The Conference, cosponsored by the US Department of Energy (USDOE) and the Southern States Energy Board (SSEB), seeks to examine the status and role of the Clean Coal Technology Demonstration Program (CCTDP) and its projects. The Program is reviewed within the larger context of environmental needs, sustained economic growth, world markets, user performance requirements and supplier commercialization activities. This will be accomplished through in-depth review and discussion of factors affecting domestic and international markets for clean coal technology, the environmental considerations in commercial deployment, the current status of projects, and the timing and effectiveness of transfer of data from these projects to potential users, suppliers, financing entities, regulators, the interested environmental community and the public. Individual papers have been entered separately.

  16. InGaAs quantum well-dots based GaAs subcell with enhanced photocurrent for multijunction GaInP/GaAs/Ge solar cells

    Science.gov (United States)

    Mintairov, S. A.; Kalyuzhnyy, N. A.; Maximov, M. V.; Nadtochiy, A. M.; Zhukov, A. E.

    2017-01-01

    MOCVD-grown GaAs single-junction solar cells (SC) with quantum well-dots (QWD) were fabricated and tested. The QWD were formed by the deposition of In0.4Ga0.6As layers separated with GaAs spacers. A remarkable improvement of photocurrent was achieved and the reduction of open-circuit voltage was partly suppressed by decreasing the spacers’ growth rate as well as increasing their thickness up to 40 nm. Based on the experimentally obtained characteristics of these single-junction SCs we estimated that using QWD media in the middle (GaAs-based) subcell can provide 1 abs. %, increasing the efficiency of the triple-junction GaInP/GaAs/Ge SCs.

  17. AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ristic, J.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Calleja, E. [Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Sanchez-Paramo, J.; Calleja, J.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Jahn, U.; Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2002-12-01

    This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III-element controls the alloy composition. The Al composition trend versus the Al flux is consistent both with the E{sub 2} phonon energy values measured by inelastic light scattering and the luminescence emission peaks position. High quality low dimensional AlGaN/GaN/AlGaN heterostructures with five GaN quantum discs, 2 and 4 nm thick, embedded into the AlGaN columns, were designed in order to study the quantum confinement effects. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  18. Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gladysiewicz, M., E-mail: marta.gladysiewicz@pwr.edu.pl; Janicki, L.; Kudrawiec, R. [Faculty of Fundamental Problems of Technology, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Siekacz, M.; Cywinski, G. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland); Skierbiszewski, C. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland); TopGaN Sp. z o.o., Sokołowska 29/37, 01-142 Warsaw (Poland)

    2015-12-28

    Electric field distribution in N-polar GaN(channel)/AlGaN/GaN(buffer) heterostructures was studied theoretically by solving Schrodinger and Poisson equations in a self-consistent manner for various boundary conditions and comparing results of these calculations with experimental data, i.e., measurements of electric field in GaN(channel) and AlGaN layers by electromodulation spectroscopy. A very good agreement between theoretical calculations and experimental data has been found for the Fermi-level located at ∼0.3 eV below the conduction band at N-polar GaN surface. With this surface boundary condition, the electric field distribution and two dimensional electron gas concentration are determined for GaN(channel)/AlGaN/GaN(buffer) heterostructures of various thicknesses of GaN(channel) and AlGaN layers.

  19. GaSb on GaAs solar cells Grown using interfacial misfit arrays (Conference Presentation)

    Science.gov (United States)

    Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh Babu B.; Huffaker, Diana L.; Hubbard, Seth M.

    2017-04-01

    State of the art InGaP2/GaAs/In0.28Ga0.72As inverted metamorphic (IMM) solar cells have achieved impressive results, however, the thick metamorphic buffer needed between the lattice matched GaAs and lattice mismatched InGaAs requires significant effort and time to grow and retains a fairly high defect density. One approach to this problem is to replace the bottom InGaAs junction with an Sb-based material such as 0.73 eV GaSb or 1.0 eV Al0.2Ga0.8Sb. By using interfacial misfit (IMF) arrays, the high degree of strain (7.8%) between GaAs and GaSb can be relaxed solely by laterally propagating 90° misfit dislocations that are confined to the GaAs-GaSb interface layer. We have used molecular beam epitaxy to grow GaSb single junction solar cells homoepitaxially on GaSb and heteroepitaxially on GaAs using IMF. Under 15-sun AM1.5 illumination, the control cell achieved 5% efficiency with a WOC of 366 mV, while the IMF cell was able to reach 2.1% with WOC of 546 mV. Shunting and high non-radiative dark current were main cause of FF and efficiency loss in the IMF devices. Threading dislocations or point defects were the expected source behind the losses, leading to minority carrier lifetimes less than 1ns. Deep level transient spectroscopy (DLTS) was used to search for defects electrically and two traps were found in IMF material that were not detected in the homoepitaxial GaSb device. One of these traps had a trap density of 7 × 1015 cm-3, about one order of magnitude higher than the control cell defect at 4 × 1016 cm-3.

  20. Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

    DEFF Research Database (Denmark)

    Ou, Yiyu; Fadil, Ahmed; Ou, Haiyan

    Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.......Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction....

  1. InGaAs-OI Substrate Fabrication on a 300 mm Wafer

    Directory of Open Access Journals (Sweden)

    Sebastien Sollier

    2016-09-01

    Full Text Available In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs wafer on insulator (InGaAs-OI substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low temperature direct wafer bonding (DWB and Smart CutTM technology. Three key process steps of the integration were therefore specifically developed and optimized. The first one was the epitaxial growing process, designed to reduce the surface roughness of the InGaAs film. Second, direct wafer bonding conditions were investigated and optimized to achieve non-defective bonding up to 600 °C. Finally, we adapted the splitting condition to detach the InGaAs layer according to epitaxial stack specifications. The paper presents the overall process flow that achieved InGaAs-OI, the required optimization, and the associated characterizations, namely atomic force microscopy (AFM, scanning acoustic microscopy (SAM, and HR-XRD, to insure the crystalline quality of the post transferred layer.

  2. An X-band four-way combined GaN solid-state power amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Chen Chi; Hao Yue; Feng Hui; Gu Wenping; Li Zhiming; Hu Shigang; Ma Teng, E-mail: ccachi@163.co [National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2010-01-15

    An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an AlGaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3{lambda}/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under V{sup ds} = 27 V, V{sup gs} = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier. (semiconductor integrated circuits)

  3. GaN-on-Si blue/white LEDs: epitaxy, chip, and package

    Science.gov (United States)

    Qian, Sun; Wei, Yan; Meixin, Feng; Zengcheng, Li; Bo, Feng; Hanmin, Zhao; Hui, Yang

    2016-04-01

    The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet at a much reduced manufacturing cost for solid state lighting and power electronics. It is very challenging to grow high quality GaN on Si substrates because of the huge mismatch in the coefficient of thermal expansion (CTE) and the large mismatch in lattice constant between GaN and silicon, often causing a micro-crack network and a high density of threading dislocations (TDs) in the GaN film. Al-composition graded AlGaN/AlN buffer layers have been utilized to not only build up a compressive strain during the high temperature growth for compensating the tensile stress generated during the cool down, but also filter out the TDs to achieve crack-free high-quality n-GaN film on Si substrates, with an X-ray rocking curve linewidth below 300 arcsec for both (0002) and (101¯2) diffractions. Upon the GaN-on-Si templates, prior to the deposition of p-AlGaN and p-GaN layers, high quality InGaN/GaN multiple quantum wells (MQWs) are overgrown with well-engineered V-defects intentionally incorporated to shield the TDs as non-radiative recombination centers and to enhance the hole injection into the MQWs through the via-like structures. The as-grown GaN-on-Si LED wafers are processed into vertical structure thin film LED chips with a reflective p-electrode and the N-face surface roughened after the removal of the epitaxial Si(111) substrates, to enhance the light extraction efficiency. We have commercialized GaN-on-Si LEDs with an average efficacy of 150-160 lm/W for 1mm2 LED chips at an injection current of 350 mA, which have passed the 10000-h LM80 reliability test. The as-produced GaN-on-Si LEDs featured with a single-side uniform emission and a nearly Lambertian distribution can adopt the wafer-level phosphor

  4. Metamorphic In0.53Ga0.47As p-I-n photodetector grown on GaAs substrates by low-pressure MOCVD

    Institute of Scientific and Technical Information of China (English)

    Qi wang; Jihe Lü; Deping Xiong; Jing Zhou; Hui Huang; Ang Miao; Shiwei Cai; Yongqing Huang; Xiaomin Ren

    2007-01-01

    Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin lowtemperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55-μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 (μm) exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit (OEIC) devices.

  5. All-nitride AlxGa1‑xN:Mn/GaN distributed Bragg reflectors for the near-infrared

    Science.gov (United States)

    Capuzzo, Giulia; Kysylychyn, Dmytro; Adhikari, Rajdeep; Li, Tian; Faina, Bogdan; Tarazaga Martín-Luengo, Aitana; Bonanni, Alberta

    2017-02-01

    Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop AlxGa1‑xN:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mgk complexes optically active in the near-infrared range of wavelengths.

  6. Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires

    KAUST Repository

    Gagliano, L.

    2016-11-29

    Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InGaP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (δ-δ) to direct (δ-δ) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InGaP.

  7. Multiple Applications of GaAs semiconductors

    Science.gov (United States)

    Martel, Jenrené; Wonka, Willy

    2003-03-01

    The object of this discussion will be to explore the many facets of Gallium Arsenide(GaAs) semiconductors. The session will begin with a brief overview of the basic properties of semiconductors in general(band gap, doping, charge mobility etc.). It will then follow with a closer look at the properties of GaAs and how these properties could potentially translate into some very exciting applications. Furthermore, current applications of GaAs semiconductors will be dicussed and analyzed. Finally, physical limits and advantages/disadvantages of GaAs will be considered.

  8. On SA, CA, and GA numbers

    CERN Document Server

    Caveney, Geoffrey; Sondow, Jonathan

    2011-01-01

    Gronwall's function $G$ is defined for $n>1$ by $G(n)=\\frac{\\sigma(n)}{n \\log\\log n}$ where $\\sigma(n)$ is the sum of the divisors of $n$. We call an integer $N>1$ a \\emph{GA1 number} if $N$ is composite and $G(N) \\ge G(N/p)$ for all prime factors $p$ of $N$. We say that $N$ is a \\emph{GA2 number} if $G(N) \\ge G(aN)$ for all multiples $aN$ of $N$. In arXiv 1110.5078, we used Robin's and Gronwall's theorems on $G$ to prove that the Riemann Hypothesis (RH) is true if and only if 4 is the only number that is both GA1 and GA2. Here, we study GA1 numbers and GA2 numbers separately. We compare them with superabundant (SA) and colossally abundant (CA) numbers (first studied by Ramanujan). We give algorithms for computing GA1 numbers; the smallest one with more than two prime factors is 183783600, while the smallest odd one is 1058462574572984015114271643676625. We find nineteen GA2 numbers $\\le 5040$, and prove that a GA2 number $N>5040$ exists if and only if RH is false, in which case $N$ is even and $>10^{8576}$.

  9. Tetrabromidobis(dicyclohexylphosphane-κPdigallium(Ga—Ga

    Directory of Open Access Journals (Sweden)

    Dennis H. Mayo

    2012-10-01

    Full Text Available The title compound, a GaII dimer, [Ga2Br4(C12H23P2], was synthesized by reaction of GaBr(THFn (THF is tetrahydrofuran with dicyclohexylphosphine in toluene. At 150 K the crystallographically centrosymmetric molecule exhibits disorder in which one of the two independent cyclohexyl groups is modelled over two sites in a 62 (1:38 (1 ratio. In d6-benzene solution, the compound exhibits virtual C2h symmetry as determined by 1H NMR. The coordination environment of the GaII atom is distorted tetrahedral.

  10. Effect of Ga on the Wettability of CuGa10 on 304L Steel

    Science.gov (United States)

    Silze, Frank; Wiehl, Gunther; Kaban, Ivan; Kühn, Uta; Eckert, Jürgen; Pauly, Simon

    2015-08-01

    In the present work, the effect of Ga on the wetting behavior of the Cu-rich braze filler CuGa10 (wt pct, Cu90.8Ga9.2 at. pct) on the steel 304L was investigated. For this, the macroscopic and microscopic effects governing the wetting of pure Ga, pure Cu, and CuGa10 alloy (wt pct) on the austenitic steel were analyzed and compared. Contact angle and surface tension measurements were carried out by means of the sessile drop technique, and, in addition, the phase formation at the interface was determined. Pure liquid Ga spreads on 304L, which supposedly is related to the formation of intermetallic Fe-Ga phases growing into the liquid Ga. Depending on the annealing time, FeGa3 and Fe14.5Ga12 were identified. In contrast, CuGa10 as well as pure Cu shows secondary wetting on the steel surface. Especially, liquid Cu prefers spreading laterally and vertically along the grain boundaries of the steel substrate. In spite of rather similar mechanisms, CuGa10 wets 304L steel at lower rate than pure Cu above the liquidus temperature.

  11. Element specific investigation of ultrathin Co2MnGa/GaAs heterostructures

    DEFF Research Database (Denmark)

    Claydon, Jill S.; Hassan, Sameh; Damsgaard, Christian Danvad;

    2007-01-01

    We have used x-ray magnetic circular dichroism to study the element specific magnetic properties of ultrathin films of the Heusler alloy Co2MnGa at room temperature. Nine films were grown by molecular beam epitaxy on GaAs substrates and engineered to vary in stoichiometry as Co1.86Mn0.99Ga1, Co1...

  12. Ga self-diffusion in isotopically enriched GaAs heterostructures doped with Si and Zn

    Energy Technology Data Exchange (ETDEWEB)

    Norseng, Marshall Stephen [Univ. of California, Berkeley, CA (United States)

    1999-12-01

    This study attempts to advance the modeling of AlGaAs/GaAs/AlAs diffusion by experimental investigation of Ga self-diffusion in undoped, as-grown doped and Zinc diffused structures. We utilize novel, isotopically enriched superlattice and heterostructure samples to provide direct observation and accurate measurement of diffusion with a precision not possible using conventional techniques.

  13. Effect of silicon doping in InGaN/GaN heterostructure grown by MOCVD

    Science.gov (United States)

    Surender, S.; Pradeep, S.; Prabakaran, K.; Singh, Shubra; Baskar, K.

    2017-05-01

    In this work the effect of Si doped InGaN/GaN heterostructure is systematically studied. The n-InGaN /GaN heterostructure are grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD). The heterostructure samples are investigated by structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature Photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. The composition of indium in n-InGaN/GaN heterostructure was calculated as 15.9% using epitaxy smooth fit software. The energy band gap (Eg) of the InGaN epilayer has been calculated as 2.78 eV using vigard's law. PL emission obtained at 446 nm for n-InGaN epilayer. AFM results indicate that the Si doped InGaN/GaN heterostructure has the root mean square (rms) roughness of about 0.59 nm for a scan area of 5×5 µm2 which has island like growth. Moreover, Hall measurements results shows that Si doped InGaN/GaN heterostructure possess carrier concentration of 4.2 × 1018cm-3 and mobility of 257 cm2/V s at room temperature.

  14. High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

    Institute of Scientific and Technical Information of China (English)

    Gu Wen-Ping; Duan Huan-Tao; Ni Jin-Yu; Hao Yue; Zhang Jin-Cheng; Feng Qian; Ma Xiao-Hua

    2009-01-01

    AlGaN/GaN high electron mobility transistors(HEMTs)are fabricated by employing SiN passivation,this paper investigates the degradation due to the high-electric-field stress.After the stress,a recoverable degradation has been found,consisting of the decrease of saturation drain current IDsat,maximal transconductance gm,and the positive shift of threshold voltage VTH at high drain-source voltage VDS.The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer.The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress.After the hot carrier stress with VDS=20 V and VGS=0 V applied to the device for 104 sec,the SiN passivation decreases the stress-induced degradation of IDsat from 36% to 30%.Both on-state and pulse-state stresses produce comparative decrease of IDsat,which shows that although the passivation is effective in suppressing electron trapping in surface states,it does not protect the device from high-electric-field degradation in nature.So passivation in conjunction with other technological solutions like cap layer,prepassivation surface treatments.or field-plate gate to weaken high-electric-field degradation should be adopted.

  15. Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

    Science.gov (United States)

    Wang, Qingpeng; Jiang, Ying; Miyashita, Takahiro; Motoyama, Shin-ichi; Li, Liuan; Wang, Dejun; Ohno, Yasuo; Ao, Jin-Ping

    2014-09-01

    GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with recessed gate on AlGaN/GaN heterostructure are reported in which the drain and source ohmic contacts were fabricated on the AlGaN/GaN heterostructure and the electron channel was formed on the GaN buffer layer by removing the AlGaN barrier layer. Negative threshold voltages were commonly observed in all devices. To investigate the reasons of the negative threshold voltages, different oxide thickness, etching gas and bias power of inductively-coupled plasma (ICP) system were utilized in the fabrication process of the GaN MOSFETs. It is found that positive charges of around 1 × 1012 q/cm2 exist near the interface at the just threshold condition in both silane- and tetraethylorthosilicate (TEOS)-based devices. It is also found that the threshold voltages do not obviously change with the different etching gas (SiCl4, BCl3 and two-step etching of SiCl4/Cl2) at the same ICP bias power level (20-25 W) and will become deeper when higher bias power is used in the dry recess process which may be related to the much serious ion bombardment damage. Furthermore, X-ray photoelectron spectroscopy (XPS) experiments were done to investigate the surface conditions. It is found that N 1s peaks become lower with higher bias power of the dry etching process. Also, silicon contamination was found and could be removed by HNO3/HF solution. It indicates that the nitrogen vacancies are mainly responsible for the negative threshold voltages rather than the silicon contamination. It demonstrates that optimization of the ICP recess conditions and improvement of the surface condition are still necessary to realize enhancement-mode GaN MOSFETs on AlGaN/GaN heterostructure.

  16. Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

    Science.gov (United States)

    Yang, Lin'an; Li, Yue; Wang, Ying; Xu, Shengrui; Hao, Yue

    2016-04-01

    Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al0.15Ga0.85N emitter barrier and a 1.7-nm-thick Al0.25Ga0.75N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A and 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al0.2Ga0.8N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In0.03Ga0.97N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.

  17. W-band monolithic oscillator using InAlAs/InGaAs HEMT

    Science.gov (United States)

    Kwon, Y.; Pavlidis, D.; Tutt, M.; Ng, G. I.; Lai, R.

    1990-01-01

    A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.

  18. Stability of Cu(In,Ga)Se2 solar cells: A literature review

    NARCIS (Netherlands)

    Theelen, M.; Daume, F.

    2016-01-01

    As Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) technology matures to production on an industrial scale, its long-term stability becomes increasingly important: The electric yield and thus the revenue of a PV system depend on both the initial conversion efficiency as well as its development over time. Incr

  19. Modeling and Simulation of a Gallium Nitride (GaN) Betavoltaic Energy Converter

    Science.gov (United States)

    2016-06-01

    technologies, nuclear materials detection, accelerator shielding, and dose/energy deposition in materials for medical therapies . An electron beam with...semiconductor devices have the potential to improve the efficiency of direct energy conversion and indirect energy conversion isotope batteries, making...offering higher- energy-conversion efficiency than 2-dimensional geometries. 15. SUBJECT TERMS GaN, betavoltaic, device simulation, isotope power source

  20. DFT algorithms for bit-serial GaAs array processor architectures

    Science.gov (United States)

    Mcmillan, Gary B.

    1988-01-01

    Systems and Processes Engineering Corporation (SPEC) has developed an innovative array processor architecture for computing Fourier transforms and other commonly used signal processing algorithms. This architecture is designed to extract the highest possible array performance from state-of-the-art GaAs technology. SPEC's architectural design includes a high performance RISC processor implemented in GaAs, along with a Floating Point Coprocessor and a unique Array Communications Coprocessor, also implemented in GaAs technology. Together, these data processors represent the latest in technology, both from an architectural and implementation viewpoint. SPEC has examined numerous algorithms and parallel processing architectures to determine the optimum array processor architecture. SPEC has developed an array processor architecture with integral communications ability to provide maximum node connectivity. The Array Communications Coprocessor embeds communications operations directly in the core of the processor architecture. A Floating Point Coprocessor architecture has been defined that utilizes Bit-Serial arithmetic units, operating at very high frequency, to perform floating point operations. These Bit-Serial devices reduce the device integration level and complexity to a level compatible with state-of-the-art GaAs device technology.

  1. GaAs Wideband Low Noise Amplifier Design for Breast Cancer Detection System

    DEFF Research Database (Denmark)

    Yan, Lei; Krozer, Viktor; Delcourt, Sebastien

    2009-01-01

    Modern wideband systems require low-noise receivers with bandwidth approaching 10 GHz. This paper presents ultra-wideband stable low-noise amplifier MMIC with cascode and source follower buffer configuration using GaAs technology. Source degeneration, gate and shunt peaking inductors are used to ...

  2. GaN C-band HPA for phased-array applications

    NARCIS (Netherlands)

    Wanum, M. van; Hek, A.P. de; Vliet, F.E. van

    2013-01-01

    In the UMS GH25-10 GaN MMIC technology a Cband high power amplifier (HPA) has been realized. The current design is primarily intended for use in a space-based SAR system with a center frequency of 5.4 GHz and a sweep bandwidth of 100 MHz. To enable reuse of the amplifier in other radar systems such

  3. Introducing GaLA: Serious Game potentials, challenges and TEL-related issues

    NARCIS (Netherlands)

    Earp, Jeffrey; Klemke, Roland

    2011-01-01

    Earp, J., & Klemke, R. (2011, 21 September). Introducing GaLA: Serious Game potentials, challenges and TEL-related issues. Presented at TEL-Think-Tank Workshop at the 6th European conference on Technology enhanced learning: towards ubiquitous learning (EC-TEL 2011), Palermo, Italy.

  4. Proceedings of the Symposium on Electromagnetic Windows (17th) Held at Georgia Institute of Technology, Engineering Experiment Station, Atlanta, Georgia on 25-27 July 1984. Part 2

    Science.gov (United States)

    1984-01-01

    determined by Archimedes principle after machining. A surface profilometer was used to . obtain a trace of the surface finish on each sample. Samples were...k k sin1 sin I and sinc (x)= (sin x)/x. . 40 -’a. 34 0 0 The field along the reflected ray can be found by using the principle of geometrical optics...temperature range with this appa.- 0 ratus but expect to push the platinum holder to above 1200 0C in the near future. 117 These data are plotted in

  5. Proceedings of the Annual National Conference on Ada (Trade Name) Technology (4th) Held in Atlanta, Georgia on 19-20 March 1986.

    Science.gov (United States)

    1986-01-01

    APPLICATCOSMCOMAEA BASE COMPACTIONNKRDL CO TO AIDSST TORETW RKHIMUIS DIPAUOSIA DATA ADATA NPP EECUTIDATAT INTERRUPTS INTERFACE CNTRL DPRINTERFACEigur 2.D...end of the tunnel. Reuse was minimize contradiction) among requirements a big aid in increasing our productivity sets. in the development of Ada test...the product big and the resources required to carry them out. The elaborated (performance, functionality, ability to adtersucsrqde ocrytenot heabormate

  6. Electronic, magnetic, elastic and thermodynamic properties of Cu{sub 2}MnGa

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Sukriti [Department of Physics, Government Kamla Raja Girls Autonomous Post Graduate College, Gwalior 474001, Madhya Pradesh (India); Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior 474 011, Madhya Pradesh (India); Gupta, Dinesh C., E-mail: sosfizix@gmail.com [Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior 474 011, Madhya Pradesh (India)

    2016-08-01

    The full-potential linearized augmented plane wave method in the stable Fm-3m phase has been implemented to investigate the structural, elastic, magnetic and electronic properties of Cu{sub 2}MnGa. The optimized equilibrium lattice parameter in stable phase is found to be 5.9495 Å. By the spin resolved density of states calculations, we have shown that the exchange splitting due to Mn atom is the main reason of ferromagnetic behavior of Cu{sub 2}MnGa. The absence of energy gap in both the spin channels predicts that the material is metallic. The total and partial density of states, elastic constants, Shear, Bulk and Young’s moduli, Zener isotropy factor, Cauchy pressure, Pugh's ductility, Kleinman parameter and Poisson's ratio are reported for the first time for the alloy. Cauchy's pressure and Pugh's index of ductility label Cu{sub 2}MnGa as ductile. Cu{sub 2}MnGa is found to be ferromagnetic and anisotropic in nature. The quasi-harmonic approximations have been employed to study the pressure and temperature dependent thermodynamic properties of Cu{sub 2}MnGa. - Highlights: • It is the first attempt to predict a variety of crystal properties of Cu{sub 2}MnGa. • Cu{sub 2}MnGa shows magnetism and hence can prove to be important in modern technology. • Cu{sub 2}MnGa is ductile and hence can attract attention of scientists and technologists.

  7. Emerging GaN-based HEMTs for mechanical sensing within harsh environments

    Science.gov (United States)

    Köck, Helmut; Chapin, Caitlin A.; Ostermaier, Clemens; Häberlen, Oliver; Senesky, Debbie G.

    2014-06-01

    Gallium nitride based high-electron-mobility transistors (HEMTs) have been investigated extensively as an alternative to Si-based power transistors by academia and industry over the last decade. It is well known that GaN-based HEMTs outperform Si-based technologies in terms of power density, area specific on-state resistance and switching speed. Recently, wide band-gap material systems have stirred interest regarding their use in various sensing fields ranging from chemical, mechanical, biological to optical applications due to their superior material properties. For harsh environments, wide bandgap sensor systems are deemed to be superior when compared to conventional Si-based systems. A new monolithic sensor platform based on the GaN HEMT electronic structure will enable engineers to design highly efficient propulsion systems widely applicable to the automotive, aeronautics and astronautics industrial sectors. In this paper, the advancements of GaN-based HEMTs for mechanical sensing applications are discussed. Of particular interest are multilayered heterogeneous structures where spontaneous and piezoelectric polarization between the interface results in the formation of a 2-dimensional electron gas (2DEG). Experimental results presented focus on the signal transduction under strained operating conditions in harsh environments. It is shown that a conventional AlGaN/GaN HEMT has a strong dependence of drain current under strained conditions, thus representing a promising future sensor platform. Ultimately, this work explores the sensor performance of conventional GaN HEMTs and leverages existing technological advances available in power electronics device research. The results presented have the potential to boost GaN-based sensor development through the integration of HEMT device and sensor design research.

  8. The diversity of (68)Ga-based imaging agents.

    Science.gov (United States)

    Velikyan, Irina

    2013-01-01

    Development of new radiopharmaceuticals and their availability are crucial factors influencing the expansion of clinical nuclear medicine. The number of new (68)Ga-based imaging agents for positron emission tomography (PET) is increasing greatly. (68)Ga has been used for labeling of a broad range of molecules (small organic molecules, peptides, proteins, and oligonucleotides) as well as particles, thus demonstrating its potential to become a PET analog of the legendary generator-produced gamma-emitting (99m)Tc but with added value of higher sensitivity and resolution as well as quantitation and dynamic scanning. Further, the availability of technology for GMP-compliant automated tracer production can facilitate the introduction of new radiopharmaceuticals and enable standardized, harmonized multicenter studies to be conducted for regulatory approval. This chapter presents some examples of tracers for targeted, pretargeted, and nontargeted imaging with emphasis on the potential of (68)Ga to facilitate clinically practical PET development and to promote the PET technique worldwide for earlier and better diagnostics, and personalized medicine with the ultimate objective of improved therapeutic outcome.

  9. Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation

    Science.gov (United States)

    Bai, Zhiyuan; Du, Jiangfeng; Liu, Yong; Xin, Qi; Liu, Yang; Yu, Qi

    2017-07-01

    In this paper, we report a new phenomenon in C-V measurement of different gate length MIS-HEMTs, which can be associated with traps character of the AlGaN/GaN interface. The analysis of DC measurement, frequency dependent capacitance-voltage measurements and simulation show that the stress from passivation layer may induce a decrease of drain output current Ids, an increase of on-resistance, serious nonlinearity of transconductance gm, and a new peak of C-V curve. The value of the peak is reduced to zero while the gate length and measure frequency are increasing to 21 μm and 1 MHz, respectively. By using conductance method, the SiNx/GaN interface traps with energy level of EC-0.42 eV to EC-0.45 eV and density of 3.2 × 1012 ∼ 5.0 × 1012 eV-1 cm-2 is obtained after passivation. According to the experimental and simulation results, formation of the acceptor-like traps with concentration of 3 × 1011 cm-2 and energy level of EC-0.37 eV under the gate on AlGaN barrier side of AlGaN/GaN interface is the main reason for the degradation after the passivation. He is currently an Associate Professor with State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, UESTC. He is the author of over 30 peer-reviewed journal papers and more than 20 conference papers. He has also hold over 20 patents. His research interests include Gallium Nitride based high-voltage power switching devices, microwave and millimeter-wave power devices and integrated technologies. Dr. Yu was a recipient of the prestigious Award of Science and Technology of China

  10. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment

    Science.gov (United States)

    Yonghe, Chen; Xuefeng, Zheng; Jincheng, Zhang; Xiaohua, Ma; Yue, Hao

    2016-05-01

    A GaN-based E/D mode direct-couple logic 6 transistors SRAM unit and a voltage level shifter were designed and fabricated. E-mode and D-mode AlGaN/GaN HEMTs were integrated in one wafer using fluorine plasma treatment and using a moderate AlGaN barrier layer heterojunction structure. The 6 transistors SRAM unit consists of two symmetrical E/D mode inverters and two E-mode switch HEMTs. The output low and high voltage of the SRAM unit are 0.95 and 0.07 V at a voltage supply of 1 V. The voltage level shifter lowers the supply voltage using four Ni-AlGaN Schottky diodes in a series at a positive supply voltage of 6 V and a negative supply voltage of -6 V. By controlling the states of inverter modules of the level shifter in turn, the level shifter offers two channel voltage outputs of -0.5 and -5 V. The flip voltage of the level shifter is 0.76 V. Both the SRAM unit and voltage shifter operate correctly, demonstrating the promising potential for GaN-based E/D mode digital and analog integrated circuits. Several considerations are proposed to avoid the influence of threshold voltage degradation of D-mode and E-mode HEMT on the operation of the circuit. Project supported by the National Natural Science Foundation of China (No. 61334002), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (No. ZHD201206), and the Program for New Century Excellent Talents in University (No. NCET-12-0915).

  11. Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate

    Science.gov (United States)

    Shahedipour-Sandvik, F.; Grandusky, J. R.; Jamil, M.; Jindal, V.; Schujman, S. B.; Schowalter, L. J.; Liu, R.; Ponce, F. A.; Cheung, M.; Cartwright, A.

    2005-09-01

    Relatively intense deep-green/yellow photoluminescence emission at ~600 nm is observed for InGaN/GaN multi quantum well (MQW) structures grown on bulk AlN substrates, demonstrating the potential to extend commercial III-Nitride LED technology to longer wavelengths. Optical spectroscopy has been performed on InGaN MQWs with an estimated In concentration of greater than 50% grown by metalorganic chemical vapor phase epitaxy at 750oC. Temperature- and power-dependence, time-resolved photoluminescence as well as spatially resolved cathodoluminescence measurements and transmission electron microscopy have been applied to understand and elucidate the nature of the mechanism responsible for radiative recombination at 600nm as well as higher energy emission band observed in the samples. A comparison between samples grown on bulk AlN and sapphire substrates indicate a lower degree of compositional and/or thickness fluctuation in the latter case. Our results indicate the presence of alloy compositional fluctuation in the active region despite the lower strain expected in the structure contrary to that of low In composition active regions deposited on bulk GaN substrates. Transient photoluminescence measurements signify a stretched exponential followed by a power decay to best fit the luminescence decay indicative of carrier hopping in the active region. Our results point to the fact that at such high In composition (>30%) InGaN compositional fluctuation is still a dominant effect despite lower strain at the substrate-epi interface.

  12. Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Fireman, Micha N.; Browne, David A.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2016-02-07

    The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditions that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.

  13. Investigation of Optically Induced Avalanching in GaAs

    Science.gov (United States)

    1989-06-01

    by Bovino , et al 4 to increase the hold off voltage. The button switch design of Fig. 4c has been used by several researchers5 ’ 7 to obtain the...ul Long flashover palh Figure 3b. 434 Optical Jlatlern a. Mourou Switch b. Bovino Switch c. Button Switch Figure 4. Photoconductive Switches...Technology and Devices Laboratory, ERADCOM (by L. Bovino , et. all) 4 • The deposition recipe for the contacts is 1) 50 ANi (provides contact to GaAs

  14. Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices

    Institute of Scientific and Technical Information of China (English)

    WANG Bao-Zhu; LI Jin-Min; WANG Zhan-Guo; WANG Xiao-Liang; HU Guo-Xin; RAN Jun-Xue; WANG Xin-Hua; GUO Lun-Chun; XIAO Hong-Ling; LI Jian-Ping; ZENG Yi-Ping

    2006-01-01

    @@ Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition (MOCVD).Rapid thermal annealing (RTA) treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AlGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4×103 Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7×1017 cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.

  15. Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.

    OpenAIRE

    Taliercio, Thierry; Gallart, Mathieu; Lefebvre, Pierre; Morel, Aurélien; Gil, Bernard; Allègre, Jacques; Grandjean, Nicolas; Massies, Jean; Grzegory, Izabella; Porowsky, Sylvester

    2001-01-01

    International audience; We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.

  16. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer

    Institute of Scientific and Technical Information of China (English)

    Ji Panfeng; Liu Naixin; Wei Tongbo; Liu Zhe; Lu Hongxi; Wang Junxi; Li Jinmin

    2011-01-01

    With an n-AlGaN (4 nm)/GaN (4 nm) superlattice (SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer,the efficiency droop of GaN-based LEDs has been improved.When the injection current is lower than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-A1GaN/GaN SL.However,as the injection current increases more than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL.The wall plug efficiency of an LED has the same trend as lumen efficiency.The improvement of the efficiency droop of LEDs with n-A1GaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities.The reverse current of LEDs at -5 V reverse voltage decreases from 0.2568029 to 0.0070543 μA,and the electro-static discharge (ESD) pass yield of an LED at human body mode (HBM)-ESD impulses of 2000 V increases from 60% to 90%.

  17. InGaN light-emitting diodes with embedded nanoporous GaN distributed Bragg reflectors

    Science.gov (United States)

    Shieh, Bing-Cheng; Jhang, Yuan-Chang; Huang, Kun-Pin; Huang, Wan-Chun; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

    2015-08-01

    InGaN-based light-emitting diodes (LEDs) with embedded conductive nanoporous GaN/undoped GaN (NP-GaN/u-GaN) distributed Bragg reflectors (DBRs) were demonstrated. Nanoporous GaN DBR structures were fabricated by pulsed 355 nm laser scribing and electrochemical etching processes. Heavily Si-doped n-type GaN:Si layers (n+-GaN) in an eight-period n+-GaN/u-GaN stack structure were transformed into a low-refractive-index, conductive nanoporous GaN structure. The measured center wavelength, peak reflectivity, and bandwidth of the nanoporous GaN DBR structure were 417 nm, 96.7%, and 34 nm, respectively. Resonance cavity modes of the photoluminescence spectra were observed in the treated LED structure with the nanoporous DBR structure.

  18. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    Science.gov (United States)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

  19. Studies of Ga NMR and NQR in SrGa4

    Science.gov (United States)

    Niki, H.; Higa, N.; Nakamura, S.; Kuroshima, H.; Toji, T.; Yogi, M.; Nakamura, A.; Hedo, M.; Nakama, T.; Ōnuki, Y.; Harima, H.

    2015-04-01

    In order to microscopically investigate the properties in SrGa4, the Ga NMR measurements of a powder sample were carried out. The Ga NMR spectra corresponding to Ga(I) and Ga(II) sites are obtained. The NMR spectra of 69&71Ga (a nuclear spin I = 3/2) in the powder sample of SrGa4 do not take a typical powder pattern caused by the NQR interaction, but take the spectra consisting of three well resolved resonance-lines, which indicates that the nonuniform distribution of crystal orientation in the powder sample occurs because of the magnetic anisotropy. From the analysis of the Ga NMR spectrum, it is found that the ab-plane of the crystal is parallel to the external magnetic field, which would be attributed to the anisotropy of the magnetic susceptibility with the easy axis parallel to the ab-plane. This result is also confirmed by the 69Ga NQR in SrGa4. The Knight shifts of the 69Ga(I) and 69Ga(II) shift slightly to the negative side with decreasing temperature due to the core polarization of the d-electrons. The values of the Knight shift of the 69Ga(I) and 69Ga(II) are 0.01 and -0.11 % at 4.2 K, and 0.09 and -0.08 % at 300 K, respectively. The values of the 1/ T 1 T of the NMR of both 69Ga(I) and 69Ga(II) are almost constant between 4.2 and 100 K, whose values are 1.5 s -1 K -1 at 69Ga(I) and 0.12 s -1 K -1 at 69Ga(II), while the 1/ T 1 T slightly increase above 100K with increasing temperature. The value of T 1 of 69Ga(I) is one order of magnitude less than that of 69Ga(II).

  20. Studies of Ga NMR and NQR in SrGa{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Niki, H., E-mail: niki@sci.u-ryukyu.ac.jp; Higa, N.; Nakamura, S.; Kuroshima, H.; Toji, T.; Yogi, M.; Nakamura, A.; Hedo, M.; Nakama, T.; Ōnuki, Y. [University of the Ryukyus, Faculty of Science (Japan); Harima, H. [Kobe University, Faculty of Science (Japan)

    2015-04-15

    In order to microscopically investigate the properties in SrGa{sub 4}, the Ga NMR measurements of a powder sample were carried out. The Ga NMR spectra corresponding to Ga(I) and Ga(II) sites are obtained. The NMR spectra of {sup 69&71}Ga (a nuclear spin I = 3/2) in the powder sample of SrGa{sub 4} do not take a typical powder pattern caused by the NQR interaction, but take the spectra consisting of three well resolved resonance-lines, which indicates that the nonuniform distribution of crystal orientation in the powder sample occurs because of the magnetic anisotropy. From the analysis of the Ga NMR spectrum, it is found that the ab-plane of the crystal is parallel to the external magnetic field, which would be attributed to the anisotropy of the magnetic susceptibility with the easy axis parallel to the ab-plane. This result is also confirmed by the {sup 69}Ga NQR in SrGa{sub 4}. The Knight shifts of the {sup 69}Ga(I) and {sup 69}Ga(II) shift slightly to the negative side with decreasing temperature due to the core polarization of the d-electrons. The values of the Knight shift of the {sup 69}Ga(I) and {sup 69}Ga(II) are 0.01 and –0.11 % at 4.2 K, and 0.09 and –0.08 % at 300 K, respectively. The values of the 1/ T{sub 1}T of the NMR of both {sup 69}Ga(I) and {sup 69}Ga(II) are almost constant between 4.2 and 100 K, whose values are 1.5 s {sup −1}K{sup −1} at {sup 69}Ga(I) and 0.12 s {sup −1}K{sup −1} at {sup 69}Ga(II), while the 1/ T{sub 1}T slightly increase above 100K with increasing temperature. The value of T{sub 1} of {sup 69}Ga(I) is one order of magnitude less than that of {sup 69}Ga(II)

  1. Methods of Ga droplet consumption for improved GaAs nanowire solar cell efficiency

    Science.gov (United States)

    Dastjerdi, M. H. T.; Boulanger, J. P.; Kuyanov, P.; Aagesen, M.; LaPierre, R. R.

    2016-11-01

    We describe methods of Ga droplet consumption in Ga-assisted GaAs nanowires, and their impact on the crystal structure at the tip of nanowires. Droplets are consumed under different group V flux conditions and the resulting tip crystal structure is examined by transmission electron microscopy. The use of GaAsP marker layers provides insight into the behavior of the Ga droplet during different droplet consumption conditions. Lower group V droplet supersaturations lead to a pure zincblende stacking-fault-free tip crystal structure, which improved the performance of a nanowire-based photovoltaic device.

  2. Theoretical luminescence spectra in p-type quantum wells and superlattices based on InGaAsN

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Thiago Freire de; Rodrigues, Sara Cristina Pinto [Universidade Federal Rural de Pernambuco (UFRPE), Recife, PE (Brazil). Dept. de Fisica; Silva Junior, Eronides Felisberto da [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Dept. de Fisica; Sipahi, Guilherme Matos [Universidade de Sao Paulo (IFSC/USP), Sao Carlos, SP (Brazil). Inst. de Fisica; Scolfaro, Luisa Maria Ribeiro [Texas State University, San Marcos, TX (United States), Dept. of Physics

    2012-07-01

    Full text: In the past few years, the dilute nitride system, InGaAsN, is proposed as a good candidate for several device applications. InGaAsN is considered a promising material for laser devices working at 1:3 or 1:5{mu}m and high-efficiency multijunction solar cells. Incorporation of In and N into GaAs result in a strong redshift of the emission wavelength. Besides, the strain can be minimized since the opposite effect of In and N on the lattice constant enables lattice matching of InGaAsN on GaAs. However, despite their great potential for applications, the understanding of their physical properties is rather incomplete. In particular, the dominant mechanisms of light emission in these alloys and their dependence on the nitrogen composition are not well established. Such information is crucial not only for a better understanding of the optical properties of the nitrogen containing III-V alloys, but also for a better technological control of alloy formation and optimization light emission efficiency. Another point concerns to investigation in p-type doping in InGaAsN. This is of great importance since, for example, can improve the transport in HBT (Heterojunction Bipolar Transistors) devices. In this work we report on theoretical luminescence spectra calculations for p-doped GaAs/InGaAsN quantum wells and superlattices. The calculations are performed within the k-vector.p-vector method by solving the full 8 x 8 Kane Hamiltonian, generalized to treat different materials. Strain effects due the lattice mismatch between InGaAsN and GaAs are taken into account. By varying the acceptor concentration we analyze the effect of exchange-correlation, which plays an important role in profile potential and electronic transition. These results can explain several important aspects about optical properties in these systems. (author)

  3. Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures

    Science.gov (United States)

    2010-05-17

    properties of AlGaN/ GaN HEMTs grown on SiC sub- strates [11,15], and that these effects may vary with the proximity of the doped layer to the two...properties of Al- GaN / GaN HEMTs grown by rf-MBE on native GaN substrates. 2. Experimental Seven AlGaN/ GaN heterostructures were grown by rf-plasma assisted...buffer needs to include Be-doped GaN isolation layers in MBE-grown AlGaN/ GaN HEMTs and must be separated from the 2DEG by 200 nm to 500 nm. Acknowledgments

  4. Bulk ammonothermal GaN

    Science.gov (United States)

    Dwiliński, R.; Doradziński, R.; Garczyński, J.; Sierzputowski, L. P.; Puchalski, A.; Kanbara, Y.; Yagi, K.; Minakuchi, H.; Hayashi, H.

    2009-05-01

    In this work, results of structural characterization of high-quality ammonothermal GaN are presented. Besides expected low dislocation density (being of the order of 10 3 cm -2) the most interesting feature seems perfect flatness of the crystal lattice of studied crystals. Regardless the size of crystals, lattice curvature radius exceeds 100 m, whereas better crystals reveal radius of several hundred meters and the best above 1000 m. Excellent crystallinity manifests in very narrow X-ray diffraction peaks of full-width at half-maximum (FWHM) values about 16 arcsec.

  5. Development of new folate-based PET radiotracers: preclinical evaluation of {sup 68}Ga-DOTA-folate conjugates

    Energy Technology Data Exchange (ETDEWEB)

    Fani, Melpomeni; Maecke, Helmut R. [University Hospital Basel, Division of Radiological Chemistry, Basel (Switzerland); University Hospital Freiburg, Clinic for Nuclear Medicine, Freiburg (Germany); Wang, Xuejuan [University Hospital Basel, Division of Radiological Chemistry, Basel (Switzerland); Nicolas, Guillaume [University Hospital Basel, Department of Nuclear Medicine, Basel (Switzerland); Medina, Christelle; Raynal, Isabelle; Port, Marc [Guerbet, Research Department, Aulnay-sous-Bois (France)

    2011-01-15

    A number of {sup 111}In- and {sup 99m}Tc-folate-based tracers have been evaluated as diagnostic agents for imaging folate receptor (FR)-positive tumours. A {sup 68}Ga-folate-based radiopharmaceutical would be of great interest, combining the advantages of PET technology and the availability of {sup 68}Ga from a generator. The aim of the study was to develop a new {sup 68}Ga-folate-based PET radiotracer. Two new DOTA-folate conjugates, named P3026 and P1254, were synthesized using the 1,2-diaminoethane and 3-{l_brace}2-[2-(3-amino-propoxy)-ethoxy]-ethoxy{r_brace}-propylamine as a spacer, respectively. Both conjugates were labelled with {sup 67/68}Ga. Binding affinity, internalization and externalization studies were performed using the FR-positive KB cell line. Biodistribution and PET/CT imaging studies were performed in nude mice, on a folate-deficient diet, bearing KB and HT1080 (FR-negative) tumours, concurrently. The new radiotracers were evaluated comparatively to the reference molecule {sup 111}In-DTPA-folate ({sup 111}In-P3139). The K{sub d} values of {sup 67/68}Ga-P3026 (4.65 {+-} 0.82 nM) and {sup 67/68}Ga-P1254 (4.27 {+-} 0.42 nM) showed high affinity for the FR. The internalization rate followed the order {sup 67/68}Ga-P3026 >{sup 67/68}Ga-P1254 >{sup 111}In-P3139, while almost double cellular retention was found for {sup 67/68}Ga-P3026 and {sup 67/68}Ga-P1254, compared to {sup 111}In-P3139. The biodistribution data of {sup 67/68}Ga-DOTA-folates showed high and receptor-mediated uptake on the FR-positive tumours and kidneys, with no significant differences compared to {sup 111}In-P3139. PET/CT images, performed with {sup 68}Ga-P3026, showed high uptake in the kidneys and clear visualization of the FR-positive tumours. The DOTA-folate conjugates can be efficiently labelled with {sup 68}Ga in labelling yields and specific activities which allow clinical application. The characteristics of the {sup 67/68}Ga-DOTA-folates are comparable to {sup 111}In

  6. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

    2014-12-15

    We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  7. Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

    Directory of Open Access Journals (Sweden)

    G. Naresh-Kumar

    2014-12-01

    Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  8. Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures.

    Science.gov (United States)

    Janicki, L; Kunert, G; Sawicki, M; Piskorska-Hommel, E; Gas, K; Jakiela, R; Hommel, D; Kudrawiec, R

    2017-02-02

    The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga1-xMnxN/GaN(template) bilayers of various Mn concentration x. It is shown that the Fermi level in (Ga,Mn)N is strongly pinned in the middle of the band gap and the thickness of the depletion layer is negligibly small. For x > 0.1% the Fermi level is located about 1.25-1.55 eV above the valence band, that is very close to, but visibly below the Mn-related Mn(2+)/Mn(3+) impurity band. The accumulated data allows us to estimate the Mn-related band offsets at the (Ga,Mn)N/GaN interface. It is found that most of the band gap change in (Ga,Mn)N takes place in the valence band on the absolute scale and amounts to -0.028 ± 0.008 eV/% Mn. The strong Fermi level pinning in the middle of the band gap, no carrier conductivity within the Mn-related impurity band, and a good homogeneity enable a novel functionality of (Ga,Mn)N as a semi-insulating buffer layers for applications in GaN-based heterostuctures.

  9. Anelasticity of GaN Epitaxial Layer in GaN LED

    Science.gov (United States)

    Chung, C. C.; Yang, C. T.; Liu, C. Y.

    2016-10-01

    In this work, the anelasticity of the GaN layer in the GaN light-emitting-diode device was studied. The present results show that the forward-voltage of GaN LED increases with time, as the GaN light-emitting-diode was maintained at a constant temperature of 100 °C. We found that the increase of the forward-voltage with time attributes to the delay-response of the piezoelectric fields (internal electrical fields in GaN LED device). And, the delay-response of the internal electrical fields with time is caused by the anelasticity (time-dependent strain) of the GaN layer. Therefore, using the correlation of strain-piezoelectric-forward voltage, a plot of thermal strain of the GaN layer against time can be obtained by measuring the forward-voltage of the studied GaN LED against time. With the curves of the thermal strain of GaN epi-layers versus time, the anelasticity of the GaN compound can be studied. The key anelasticity parameter, characteristic relaxation time, of the GaN is defined to be 2623.76 min in this work.

  10. 3-D GaAs radiation detectors

    CERN Document Server

    Meikle, A R; Ledingham, Kenneth W D; Marsh, J H; Mathieson, K; O'Shea, V; Smith, K M

    2002-01-01

    A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through the detector bulk is described. The development of the technology to fabricate such a detector is presented along with electrical and radiation source tests. Simulations of the electrical characteristics are given for detectors of various dimensions. Laser drilling, wet chemical etching and metal evaporation were used to create a cell array of nine electrodes, each with a diameter of 60 mu m and a pitch of 210 mu m. Electrical measurements showed I-V characteristics with low leakage currents and high breakdown voltages. The forward and reverse I-V measurements showed asymmetrical characteristics, which are not seen in planar diodes. Spectra were obtained using alpha particle illumination. A charge collection efficiency of 50% and a S/N ratio of 3 : 1 were obtained. Simulations using the MEDICI software package were performed on cells with various dimensions and were comparable with experimental results. Simulati...

  11. Preparation and characterization of GaN films grown on Ga-diffused Si(111) substrates

    Institute of Scientific and Technical Information of China (English)

    SUN Zhencui; CAO Wentian; WEI Qinqin; WANG Shuyun; XUE Chengshan; SUN Haibo

    2005-01-01

    Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15min and nitrided at the temperature of 900℃ for 10, 15, and 20 min, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.

  12. Orbital pseudotumor imaged with Ga-67 citrate

    Energy Technology Data Exchange (ETDEWEB)

    Jaikishen, P.; Bateman, J.L.; Shreeve, W.W. (Veterans Administration Medical Center, Northport, NY (USA))

    1989-11-01

    An orbital pseudotumor causing proptosis, diplopia, and gaze palsy was imaged with Ga-67 citrate and showed persistent intense activity for five days. This may be the first case of gallium uptake into an orbital pseudotumor to be reported in the literature. This case report demonstrates the use of Ga-67 citrate imaging in the early diagnostic workup of this disorder.

  13. Radiative and non-radiative recombination in GaInN/GaN quantum wells; Strahlende und nichtstrahlende Rekombination in GaInN/GaN-Quantenfilmen

    Energy Technology Data Exchange (ETDEWEB)

    Netzel, C.

    2007-02-08

    The studies presented in this thesis deal with the occurence of V defectsin GaInN/GaN quantum film structures grown by means of organometallic gas phase epitaxy, and the effects, which have the V defects respectively the GaInN quantum films on the V-defect facets on the emission and recombination properties of the whole GaInN/GaN quantum film structure. The V-defects themselves, inverse pyramidal vacancies with hexagonal base in the semiconductor layers, arise under suitable growth conditions around the percussion violations, which extend in lattice-mismatched growth of GaN on the heterosubstrates sapphire or silicon carbide starting in growth direction through the crystal. If GaInN layers are grown over V-defect dispersed layers on the (1-101) facets of the V defects and the (0001) facets, the growth front of the structure, different growth velocities are present, which lead to differently wide GaInN quantum films on each facets.

  14. Optical Properties of GaSb Nanofibers

    Directory of Open Access Journals (Sweden)

    Perez-Bergquist Alejandro

    2011-01-01

    Full Text Available Abstract Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL of the ion irradiation-induced nanofibers before and after annealing were studied. Results show that the Raman intensity of the GaSb LO phonon mode decreased after ion beam irradiation as a result of the formation of the amorphous nanofibers. A new mode is observed at ~155 cm-1 both from the unannealed and annealed GaSb nanofiber samples related to the A1g mode of Sb–Sb bond vibration. Room temperature PL measurements of the annealed nanofibers present a wide feature band at ~1.4–1.6 eV. The room temperature PL properties of the irradiated samples presents a large blue shift compared to bulk GaSb. Annealed nanofibers and annealed nanofibers with Au nanodots present two different PL peaks (400 and 540 nm, both of which may originate from Ga or O vacancies in GaO. The enhanced PL and new band characteristics in nanostructured GaSb suggest that the nanostructured fibers may have unique applications in optoelectronic devices.

  15. Origin of magnetostriction in Fe-Ga

    DEFF Research Database (Denmark)

    Mudivarthi, Chaitanya; Laver, Mark; Cullen, James

    2010-01-01

    This paper investigates the origin of large magnetostriction in Fe-Ga alloys using small-angle neutron scattering (SANS) and Kerr microscopy. The SANS data for a single-crystal, electron irradiated, and quenched Fe81Ga19 sample under externally applied magnetic and elastic fields revealed...

  16. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  17. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures.

    Science.gov (United States)

    Mazur, Yu I; Dorogan, V G; de Souza, L D; Fan, D; Benamara, M; Schmidbauer, M; Ware, M E; Tarasov, G G; Yu, S-Q; Marques, G E; Salamo, G J

    2014-01-24

    The structural and optical properties of GaAs1-xBix quantum wells (QWs) symmetrically clad by GaAs barriers with and without additional confining AlGaAs layers are studied. It is shown that a GaAs/GaAs1-xBix/GaAs QW with x ~ 4% and well width of ~ 4 nm grown by molecular beam epitaxy demonstrates efficient photoluminescence (PL) that becomes significantly more thermally stable when a cladding AlGaAs layer is added to the QW structure. The PL behavior for temperatures between 10 and 300 K and for excitation intensities varying by seven orders of magnitude can be well described in terms of the dynamics of excitons including carrier capture in the QW layer, thermal emission and diffusion into the cladding barriers. Understanding the role of these processes in the luminescence of dilute GaAs1-xBix QW structures facilitates the creation of highly efficient devices with reduced thermal sensitivity and low threshold current.

  18. Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zhengyuan; Shen, Xiyang; Xiong, Huan; Li, Qingfei; Kang, Junyong; Fang, Zhilai [Xiamen University, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen (China); Lin, Feng; Yang, Bilan; Lin, Shilin [San' an Optoelectronics Co., Ltd, Xiamen (China); Shen, Wenzhong [Shanghai Jiao Tong University, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai (China); Zhang, Tong-Yi [Shanghai University, Shanghai University Materials Genome Institute and Shanghai Materials Genome Institute, Shanghai (China)

    2016-02-15

    Interface modification of high indium content InGaN/GaN quantum wells was carried out by Mg pretreatment of the GaN barrier surface. The indium in the Mg-pretreated InGaN layer was homogeneously distributed, making the interfaces abrupt. The improved interface quality greatly enhanced light emission capacity. The cathodoluminescence intensity of the Mg-pretreated InGaN/GaN quantum wells was correspondingly much stronger than those of the InGaN/GaN quantum wells without Mg pretreatment. (orig.)

  19. AlGaN/GaN HEMT技术与其专利申请分析研究

    Institute of Scientific and Technical Information of China (English)

    2016-01-01

    AlGaN/GaN HEMT器件在微波大功率和高温应用方面均具有明显的优势,已经成为当前研究的热点之一.本文介绍了AlGaN/GaN HEMT的工作原理,并结合全球与本国的关于AlGaN/GaN HEMT的相关专利申请情况,梳理出当AlGaN/GaN HEMT的专利申请趋势.

  20. Investigation of InAs/GaSb-based superlattices by diffraction methods

    Energy Technology Data Exchange (ETDEWEB)

    Ashuach, Y.; Kauffmann, Y.; Lakin, E. [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.i [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Grossman, S.; Klin, O.; Weiss, E. [SCD, SemiConductor Devices, P. O. Box 2250, Haifa 31021 (Israel)

    2010-02-15

    We use high-resolution X-ray diffraction and high-resolution transmission electron microscopy in order to study the strain state, atomic intermixing and layer thicknesses in the MBE-grown GaSb/InSb/InAs/InSb superlattices. Simple and fast metrology procedure is developed, which allows us to obtain the most important technological parameters, such as the thicknesses of the GaSb, InAs and ultra-thin InSb sub-layers, the superlattice period and the fraction of atomic substitutions in the InSb sub-layers.

  1. Modeling and Design of Graphene GaAs Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    Yawei Kuang

    2015-01-01

    Full Text Available Graphene based GaAs junction solar cell is modeled and investigated by Silvaco TCAD tools. The photovoltaic behaviors have been investigated considering structure and process parameters such as substrate thickness, dependence between graphene work function and transmittance, and n-type doping concentration in GaAs. The results show that the most effective region for photo photogenerated carriers locates very close to the interface under light illumination. Comprehensive technological design for junction yields a significant improvement of power conversion efficiency from 0.772% to 2.218%. These results are in good agreement with the reported experimental work.

  2. Bandgap engineering of GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ming, Bang-Ming; Yan, Hui [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Wang, Ru-Zhi, E-mail: wrz@bjut.edu.cn, E-mail: yamcy@csrc.ac.cn [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Computational Science Research Center, Beijing, 100094 (China); Yam, Chi-Yung, E-mail: wrz@bjut.edu.cn, E-mail: yamcy@csrc.ac.cn [Beijing Computational Science Research Center, Beijing, 100094 (China); Xu, Li-Chun [College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Lau, Woon-Ming [Beijing Computational Science Research Center, Beijing, 100094 (China); Chengdu Green Energy and Green Manufacturing Technology R& D Center, Chengdu, Sichuan, 610207 (China)

    2016-05-15

    Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, while it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.

  3. Gallium incorporation kinetics during GSMBE of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Jones, C.R.; Kaspi, R. [Wright State Univ. Research Center, Dayton, OH (United States); Lei, T.; Evans, K.R. [Wright Lab., Wright-Patterson AFB, OH (United States). Solid State Electronics Directorate

    1996-11-01

    The kinetics of Ga incorporation during gas-source molecular beam epitaxy of GaN are investigated for varying substrate temperature and incident ammonia flux. Incident Ga atoms eventually either: (1) react with NH{sub 3} to form GaN; (2) accumulate on the film surface, or (3) desorb. Low substrate temperatures lead to significant Ga surface accumulation due to the temperature-dependent reactivity of NH{sub 3} towards Ga. High substrate temperatures give rise to significant Ga desorption. Increasing NH{sub 3} flux retards both Ga surface accumulation and Ga desorption. The GaN formation rate variation with substrate temperature peaks near 750 C and increases with NH{sub 3} flux. The observation of two distinct and very low activation energies for Ga desorption suggests a relatively complex surface chemistry and a strong likelihood that hydrogen is playing an important role.

  4. Resonant Transport in Nb/GaAs/AlGaAs/GaAs Microstructures

    CERN Document Server

    Giazotto, F; Beltram, F; Lazzarino, M; Orani, D; Rubini, S; Franciosi, A

    2002-01-01

    Resonant transport in a hybrid semiconductor-superconductor microstructure grown by MBE on GaAs is presented. This structure experimentally realizes the prototype system originally proposed by de Gennes and Saint-James in 1963 in \\emph{all}-metal structures. A low temperature single peak superimposed to the characteristic Andreev-dominated subgap conductance represents the mark of such resonant behavior. Random matrix theory of quantum transport was employed in order to analyze the observed magnetotransport properties and ballistic effects were included by directly solving the Bogoliubov-de Gennes equations.

  5. Preparation of [(68)Ga]PSMA-11 for PET-CT imaging using a manual synthesis module and organic matrix based (68)Ge/(68)Ga generator.

    Science.gov (United States)

    Nanabala, Raviteja; Anees, Muhammed K; Sasikumar, Arun; Joy, Ajith; Pillai, M R A

    2016-08-01

    [(68)Ga]PSMA-11 is a relatively recently introduced radiopharmaceutical for PET-CT imaging of prostate cancer patients. The availability of (68)Ge/(68)Ga generator and PSMA-11 ligand from commercial sources is facilitating the production of the radiopharmaceutical in-house. This paper describes our experience on the preparation of ~200 batches of [(68)Ga]PSMA-11 for conducting PET-CT imaging in patients suspected/suffering from prostate cancer. The radiosynthesis of [(68)Ga]PSMA-11 was done in a hospital based nuclear medicine department using (68)Ge/(68)Ga generator and a manual synthesis module, both supplied by Isotope Technologies Garching (ITG), Germany. The production involved the reaction of 5μg (5.3nmol) of PSMA-11 ligand in 1 ml of 0.25M sodium acetate buffer with 4ml of (68)GaCl3 in 0.05M HCl for 5min at 105°C; followed by purification in a C18 cartridge and collection through a 0.22μm pore size filter. The radiochemical yields obtained were consistently high, 93.19%±3.76%, and there was hardly any batch failure. The radiochemical purity of the product was >99% and the product was stable for over 2h; however it was used in patients immediately after preparation. About 200 batches of [(68)Ga]PSMA-11 were prepared during the period and more than 300 patients received the tracer during the 14months of study. No adverse reaction was observed in any of the patients and the image qualities were consistent with literature reports. [(68)Ga]PSMA-11 with high radiochemical and radionuclidic purity is conveniently prepared by using a (68)Ge/(68)Ga generator and manual synthesis module. The radiochemical yields are very high; and activity sufficient for 3-4 patients can be prepared in a single batch; multiple batches can be done on the same day and when needed after a gap of 1.5-2h. Copyright © 2016 Elsevier Inc. All rights reserved.

  6. Study of wurtzite and zincblende GaN/InN based solar cells alloys: First-principles investigation within the improved modified Becke-Johnson potential

    KAUST Repository

    Ul Haq, Bakhtiar

    2014-09-01

    Wurtzite GaInN alloys with flexible energy gaps are pronounced for their potential applications in optoelectronics and solar cell technology. Recently the unwanted built-in fields caused by spontaneous polarization and piezoelectric effects in wurtzite (WZ) GaInN, has turned the focus towards zinc-blende (ZB) GaInN alloys. To comprehend merits and demerits of GaInN alloys in WZ and ZB structures, we performed a comparative study of the structural, electronic and optical properties of Ga1-xInxN alloys with different In concentration using first-principles methodology with density function theory with generalized gradient approximations (GGA) and modified Becke-Johnson (mBJ) potential. Investigations pertaining to total energy of GaInN for the both phases, demonstrate a marginal difference, reflecting nearly equivalent stability of the ZB-GaInN to WZ-GaInN. The larger ionic radii of indium (In), result in larger values of lattice parameters of Ga1-xInxN with higher In concentration. For In deficient Ga1-xInxN, at first, the formation enthalpies increase rapidly as the In content approaches to 45% in WZ and 47% in ZB, and then decreases with the further increase in In concentration. ZB-Ga1-xInxN alloys exhibit comparatively narrower energy gaps than WZ, and get smaller with increase in In contents. The smaller values of effective masses of free carriers, in WZ phase, than ZB phase, reflect higher carrier mobility and electrical conductivity of WZ-Ga1-xInxN. Moreover wide energy gap of WZ-Ga1-xInxN results in large values of the absorption coefficients comparatively and smaller static refractive indices compared to ZB-Ga1-xInxN. Comparable electronic and optical characteristics of the ZB-Ga1-xInxN to WZ-Ga1-xInxN endorses it a material of choice for optoelectronics and solar cell applications besides the WZ-Ga1-xInxN. © 2014 Elsevier Ltd.

  7. Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

    Science.gov (United States)

    Wang, T.

    2016-09-01

    The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

  8. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

    Institute of Scientific and Technical Information of China (English)

    Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

    2012-01-01

    We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer,which leads to a higher potential barrier at the backside of the twodimensional electron gas channel and better carrier confinement.This,remarkably,reduces the drain leakage current and improves the device breakdown voltage.The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (~ 100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (~50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate-drain distance of 1μm.The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm,a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.

  9. High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN

    Energy Technology Data Exchange (ETDEWEB)

    Siekacz, M.; Nowak, G.; Porowski, S. [High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw (Poland); Dybko, K. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Skierbiszewski, C. [High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw (Poland); TopGaN Ltd., Warsaw (Poland); Knap, W. [High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw (Poland); GES -UMR, CNRS - Universite Montpellier 2, Place E. Bataillon, 34950 Montpellier (France); Wasilewski, Z. [Institute for Microstructural Sciences, National Research Council, Ottawa (Canada); Maude, D. [Grenoble High Magnetic Field Laboratory, MPI-CNRS, 38042 Grenoble (France); Lusakowski, J. [Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw (Poland); Krupczynski, W.; Bockowski, M. [TopGaN Ltd., Warsaw (Poland)

    2005-03-01

    We present transport properties of AlGaN/GaN heterostructures grown over high-pressure bulk GaN substrates. The experimental results include the conductivity tensor measurements in a magnetic field up to 23 T in a wide temperature range 2 K-300 K for Hall bar samples. The room temperature high field data allow us to clearly separate contributions of a parasitic parallel conduction from 2DEG conduction in all investigated heterostructures. The room temperature mobility limit for 2D electrons in GaN/AlGaN heterojunctions grown on defect free GaN bulk substrates is around 2400 cm{sup 2}/Vs. The Quantum Hall Effect studies are performed in the magnetic fields up to 23 T and temperatures between 1.6 K and 15 K This high magnetic field in combination with very high mobility (over 60000 cm{sup 2}/Vs) in the sample grown on the bulk GaN substrate allow us to determine the activation energy in cyclotron gap from longitudinal magnetoresistance. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Etude des mécanismes physiques responsables des dysfonctionnements des transistors HEMTs à base d'hétérostructures AlGaN/GaN et AlInN/GaN

    OpenAIRE

    2011-01-01

    The manufacture of semiconductor components based on gallium nitride (GaN) is currently undergoing a major expansion. This material, by his physical and chemical attractive properties, is a very good candidate for the manufacture of high power and hign frequency operating components. In practice, before integrating these components in an electronic system, the analysis of reliability is a necessary step to validate the used manufacturing technology. The objective of this work is to determine ...

  11. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  12. Spin-Resolved Electronic Structure of Ultrathin Epitaxial Fe Films on Vicinal and Singular GaAs(100) Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Morton, S A; Waddill, G D; Spangenberg, M; Seddon, E A; Neal, J; Shen, T; Tobin, J G

    2003-03-10

    Recently there has been considerable interest in the study of spin injection at ferromagnetic semiconductor heterojunctions and ferromagnetic metal--semiconductor contacts. Studies of ntype semiconductors have demonstrated spin-coherent transport over large distances5 and the persistence of spin coherence over a sizeable time scale. Clearly such investigations have been stimulated by the potential of the development of ''spintronics'', electronic devices utilizing the information of the electron spin states. To understand and improve the magnetic properties of ultrathin Fe films on GaAs has been the aim of many research groups over recent years. The interest in this system has both technological and fundamental scientific motivations. Technologically, Fe on GaAs may serve to realize spin electronic devices. From a fundamental science point of view, Fe on GaAs serves as a prototype for studies of the interplay between the crystalline structure and morphology of an ultrathin film, its electronic structure and the long range magnetic order it exhibits. Furthermore, it is well known that an oxidized Cs layer on GaAs substantially alters the work-function of the GaAs surface, which plays a very important role in the application of GaAs as a spin polarized electron source.

  13. GaInP on oxide nonlinear photonic crystal technology.

    Science.gov (United States)

    Martin, Aude; Sanchez, Dorian; Combrié, Sylvain; de Rossi, Alfredo; Raineri, Fabrice

    2017-02-01

    Heat dissipation is improved in nonlinear III-V photonic crystal waveguides owing to the hybrid III-V/Silicon integration platform, allowing efficient four-wave mixing in the continuous-wave regime. A conversion efficiency of -17.6  dB is demonstrated with a pump power level below 100 mW in a dispersion-engineered waveguide with a flat group index of 28 over a 10 nm bandwidth.

  14. Development of a Surface Technology for GaAs Devices.

    Science.gov (United States)

    1981-12-01

    reaction. This is positive for the final material and negative for the initial material Gi molar free enthalpy of the material R general gas constant T...temperature For the molar free enthalpy we have Gi0 (T) = Hi°(T) - T.Si°(T) where Hi0 enthalpy of the material 0 and Si entropy of the material I... neutralisation . The inter- face Fermi level shifts, however, only by a small amount. I - 49 - ,WIDTH OF PHOTOPULSE WITH PHOTOPUILSE O:fi dt _p 02 .WITHOUT

  15. Dilute GaAsN and GaInAsN grown by liquid phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Milanova, M; Koleva, G; Kakanakov, R [Central Laboratory of Applied Physics, Bulgarian Academy of Sciences, 59 St. Petersburg Blvd, 4000 Plovdiv (Bulgaria); Vitanov, P K; Alexieva, Z; Goranova, E A [Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Arnaudov, B; Evtimova, S [Faculty of Physics, St. Kl. Ohridski University of Sofia, 5 J. Bourchier Blvd, 1164 Sofia (Bulgaria); Barthou, C; Clerjaud, B, E-mail: vitanov@phys.bas.b [Universite Pierre et Marie Curie, Institut des NanoSciences de Paris, rue de Lourmel 140, 75015 Paris (France)

    2010-04-01

    Dilute III-nitrides, such as GaAsN and GaInAsN, are of considerable current interest both from a fundamental point of view and for applications in solar cells, GaAs-based long-wavelength photodetectors and diode lasers. The addition of nitrogen leads to material properties that deviate strongly from those expected for conventional III-V solid solutions. The possibility was investigated to use liquid phase epitaxy to incorporate nitrogen in epitaxial GaAsN/GaAs and GaInAsN/GaAs heterostructures. The structures were grown from Ga- and Ga-In- melts containing powder GaN as a nitrogen source. The initial growth temperature was varied in the range 560{sup 0}C - 660{sup 0}C. The low temperature growth favors nitrogen incorporation in the epilayers. The optical transmission and photoluminescence spectra of a set of structures grown at different temperatures were studied showing ternary and quaternary dilute nitride solid solutions with nitrogen content about 0.2 at.%. The photoluminescence spectra show emission from localized nitrogen states as well.

  16. Dilute GaAsN and GaInAsN grown by liquid phase epitaxy

    Science.gov (United States)

    Milanova, M.; Koleva, G.; Kakanakov, R.; Vitanov, P. K.; Alexieva, Z.; Goranova, E. A.; Arnaudov, B.; Evtimova, S.; Barthou, C.; Clerjaud, B.

    2010-04-01

    Dilute III-nitrides, such as GaAsN and GaInAsN, are of considerable current interest both from a fundamental point of view and for applications in solar cells, GaAs-based long-wavelength photodetectors and diode lasers. The addition of nitrogen leads to material properties that deviate strongly from those expected for conventional III-V solid solutions. The possibility was investigated to use liquid phase epitaxy to incorporate nitrogen in epitaxial GaAsN/GaAs and GaInAsN/GaAs heterostructures. The structures were grown from Ga- and Ga-In- melts containing powder GaN as a nitrogen source. The initial growth temperature was varied in the range 560°C - 660°C. The low temperature growth favors nitrogen incorporation in the epilayers. The optical transmission and photoluminescence spectra of a set of structures grown at different temperatures were studied showing ternary and quaternary dilute nitride solid solutions with nitrogen content about 0.2 at.%. The photoluminescence spectra show emission from localized nitrogen states as well.

  17. Time-Resolved Photoluminescence Studies of InGaN/AlGaN Multiple Quantum Wells

    Science.gov (United States)

    Zeng, K. C.; Smith, M.; Lin, J. Y.; Jiang, H. X.; Robert, J. C.; Piner, E. L.; McIntosh, F. G.; Bahbahani, M.; Bedair, S. M.; Zavada, J.

    1997-03-01

    Picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the dynamic processes of optical transitions in InGaN/AlGaN multiple quantum wells (MQW) grown by metal-organic chemical vapor deposition (MOCVD). The dynamical behavior of the PL emission reveals that the main emission line in these MQW is the combination of the localized exciton and a band-to-impurity emission lines. The spectral lineshape and the recombination dynamics of the localized exciton and of the band-to-impurity transitions have been systematically investigated at different temperatures and excitation intensities and for MQW with different structures and growth conditions. From these studies, important parameters, including the localization energy and the recombination lifetimes of the localized excitons in InGaN/AlGaN quantum wells, the well width fluctuation, alloy compositions in the well and the barrier materials, and the band offset between InGaN and AlGaN can be deduced. Comparing with time-resolved PL results of InGaN/GaN and GaN/AlGaN MQW, important effects of interface on the optical properties of the III-nitride MQW have been evaluated. Implications of our results to device applications will be discussed.

  18. Strain gauges of GaSbFeGa{sub 1.3} eutectic composites

    Energy Technology Data Exchange (ETDEWEB)

    Aliyev, M.I.; Khalilova, A.A.; Arasly, D.H.; Rahimov, R.N. [National Academy of Sciences, Institute of Physics of Azerbaijan, Baku (Azerbaijan); Tanoglu, M. [Izmir Institute of Technology, Department of Mechanical Engineering, Izmir (Turkey); Ozyuzer, L. [Izmir Institute of Technology, Department of Physics, Izmir (Turkey)

    2004-12-01

    A needle-shaped metallic FeGa{sub 1.3} phase oriented in a specific direction and uniformly distributed within a GaSb matrix was grown by a vertical Bridgman method. Strain-gauge characteristics, such as strain-sensitivity coefficient (S), temperature coefficient of strain sensitivity (TCS) and temperature coefficient of resistance, of GaSb and GaSbFeGa{sub 1.3} eutectic alloy have been investigated in the range of 200 to 400 K under deformation up to strains of 1.3 x 10{sup -3}. The value of S of the GaSbFeGa{sub 1.3} composition is measured to be 40{+-}5 and its TCS is about 0.2% deg{sup -1} when the current is perpendicular to the needles and the needles are parallel to the plane of the gauge substrate. The strain-sensitivity characteristics are linear and hysteresis free in the investigated temperature range in the aforementioned direction. It was found that GaSbFeGa{sub 1.3}-based strain gauges possess better deformation characteristics than GaSb-based gauges. (orig.)

  19. Monte Carlo simulation of the kinetic effects on GaAs/GaAs(001) MBE growth

    Science.gov (United States)

    Ageev, Oleg A.; Solodovnik, Maxim S.; Balakirev, Sergey V.; Mikhaylin, Ilya A.; Eremenko, Mikhail M.

    2017-01-01

    The molecular beam epitaxial growth of GaAs on the GaAs(001)-(2×4) surface is investigated using a kinetic Monte Carlo-based method. The developed algorithm permits to focus on the kinetic effects in a wide range of growth conditions and enables considerable computational speedup. The simulation results show that the growth rate has a dramatic influence upon both the island morphology and Ga surface diffusion length. The average island size reduces with increasing growth rate while the island density increases with increasing growth rate as well as As4/Ga beam equivalent pressure ratio. As the growth rate increases, the island density becomes weaker dependent upon the As4/Ga pressure ratio and approaches to a saturation value. We also discuss three characteristics of Ga surface diffusion, namely a diffusion length of a Ga adatom deposited first, an average diffusion length, and an island spacing as an average distance between islands. The calculations show that the As4/Ga pressure ratio dependences of these characteristics obey the same law, but with different coefficients. An increase of the As4/Ga pressure ratio leads to a decrease in both the diffusion length and island spacing. However, its influence becomes stronger with increasing growth rate for the first Ga adatom diffusion length and weaker for the average diffusion length and for the island spacing.

  20. Preparation of GaN-based cross-sectional TEM specimens by laser lift-off.

    Science.gov (United States)

    Zilan, Li; Xiaodong, Hu; Ke, Chen; Ruijuan, Nie; Xuhui, Luo; Xiaoping, Zhang; Tongjun, Yu; Bei, Zhang; Song, Chen; Zhijian, Yang; Zhizhong, Chen; Guoyi, Zhang

    2005-01-01

    Laser lift-off (LLO) technology is successfully used to prepare GaN-based TEM cross-sectional specimens. Detailed procedures of the method to prepare the specimens are demonstrated. Large thin areas suitable for TEM analysis were obtained. TEM images of the resulting GaN interface are studied, and the changes in structural quality are confined to approximately the first 250 nm of the epilayer. Clear TEM images of the whole epilayer and the InGaN quantum wells and the HRTEM images of the superlattice layer are demonstrated, showing that LLO is a quick and ideal method to study the crystal structure of the epilayer, especially if only the upper layers are of interest.

  1. X-band inverse class-F GaN internally-matched power amplifier

    Science.gov (United States)

    Zhao, Bo-Chao; Lu, Yang; Han, Wen-Zhe; Zheng, Jia-Xin; Zhang, Heng-Shuang; Ma, Pei-jun; Ma, Xiao-Hua; Hao, Yue

    2016-09-01

    An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor Cds, influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane. Experiment results show that, in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT. To the best of our knowledge, this is the first inverse class-F GaN internally-matched power amplifier, and the PAE is quite high at the X-band. Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016801).

  2. Epitaxial Growth of GaN-based LEDs on Simple Sacrificial Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ian Ferguson; Chris Summers

    2009-12-31

    The objective of this project is to produce alternative substrate technologies for GaN-based LEDs by developing an ALD interlayer of Al{sub 2}O{sub 3} on sacrificial substrates such as ZnO and Si. A sacrificial substrate is used for device growth that can easily be removed using a wet chemical etchant leaving only the thin GaN epi-layer. After substrate removal, the GaN LED chip can then be mounted in several different ways to a metal heat sink/reflector and light extraction techniques can then be applied to the chip and compared for performance. Success in this work will lead to high efficiency LED devices with a simple low cost fabrication method and high product yield as stated by DOE goals for its solid state lighting portfolio.

  3. Technology characteristics and concerns arising in the design and fabrication of an entire signal processor using gallium arsenide integrated circuits

    Science.gov (United States)

    Naused, Barbara A.; Samson, Mark L.; Schwab, Daniel J.; Gilbert, Barry K.

    Various GaAs transistor and gate technologies that have been developed since 1980 are analyzed. The characteristics of GaAs logic gates and ICs and the buffered FET logic, Shottky diode FET logic, direct coupled FET logic, and heterojunction integrated injection logic used to implement GaAs gate arrays of LSI complexity are described. The use of digital GaAs in a complex target signal processor, the Advanced Onboard Signal Processor (AOSP), is studied. Data from the testing of GaAs components for the AOSP at the wafer probe, package, and assembled circuit board levels are examined.

  4. Water, Air Emissions, and Cost Impacts of Air-Cooled Microturbines for Combined Cooling, Heating, and Power Systems: A Case Study in the Atlanta Region

    Directory of Open Access Journals (Sweden)

    Jean-Ann James

    2016-12-01

    Full Text Available The increasing pace of urbanization means that cities and global organizations are looking for ways to increase energy efficiency and reduce emissions. Combined cooling, heating, and power (CCHP systems have the potential to improve the energy generation efficiency of a city or urban region by providing energy for heating, cooling, and electricity simultaneously. The purpose of this study is to estimate the water consumption for energy generation use, carbon dioxide (CO2 and NOx emissions, and economic impact of implementing CCHP systems for five generic building types within the Atlanta metropolitan region, under various operational scenarios following the building thermal (heating and cooling demands. Operating the CCHP system to follow the hourly thermal demand reduces CO2 emissions for most building types both with and without net metering. The system can be economically beneficial for all building types depending on the price of natural gas, the implementation of net metering, and the cost structure assumed for the CCHP system. The greatest reduction in water consumption for energy production and NOx emissions occurs when there is net metering and when the system is operated to meet the maximum yearly thermal demand, although this scenario also results in an increase in greenhouse gas emissions and, in some cases, cost. CCHP systems are more economical for medium office, large office, and multifamily residential buildings.

  5. Low Turn-on Voltage of InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor%低开启电压的InGaP/GaAsSb/GaAs双异质结晶体管

    Institute of Scientific and Technical Information of China (English)

    郑丽萍; 严北平; 孙海锋; 刘新宇; 和致经; 吴德馨

    2003-01-01

    采用窄禁带宽度材料GaAsSb作为异质结晶体管的基区材料,成功研制出了能有效降低电路工作电压和功率损耗的低开启电压的NPN InGaP/GaAsSb/GaAs双异质结晶体管(double heterojunction bipolar transistor,DHBT).器件性能如下:BE结的正向开启电压(turn-on voltage)仅为0.73V;当IB=1μA/step时,直流增益达到了100,BVCEO=5~6V.通过对基区不同Sb含量器件的比较得到,器件的直流特性与基区Sb的含量有关.

  6. Novel fully vertical GaN p-n diode on Si substrate grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Mase, Suguru; Urayama, Yuya; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

    2016-11-01

    We report novel GaN fully vertical p-n diode on Si grown by metalorganic chemical vapor deposition. The thick strained layer superlattice is effective in controlling a doping level of 1016 cm-3 in an n--GaN drift layer. The GaN p-n diode exhibits a differential on-resistance R on of 7.4 mΩ cm2, a turn-on voltage of 3.4 V, and a breakdown voltage V B of 288 V. The corresponding Baliga’s figure of merit (FOM) V\\text{B}2/R\\text{on} is 11.2 MW/cm2. A good FOM value for the GaN-on-Si vertical p-n diode is realized for a drift layer thickness of 1.5 µm without using substrate removal technology.

  7. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

    Science.gov (United States)

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

    2017-01-01

    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  8. Meningiomas: a comparative study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for molecular imaging in mice.

    Directory of Open Access Journals (Sweden)

    María Luisa Soto-Montenegro

    Full Text Available PURPOSE: The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three (68Ga-DOTA-labeled somatostatin analogues ((68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE using PET/CT in a murine model with subcutaneous meningioma xenografts. METHODS: The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN. (68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L and tumor-to-muscle (T/M SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt was determined. RESULTS: Hepatic SUVmax and Vt were significantly higher with (68Ga-DOTANOC than with (68Ga-DOTATOC and (68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between (68Ga-DOTATATE and (68Ga-DOTATOC, both of which had a higher fraction than (68Ga-DOTANOC. The T/M SUV ratio was significantly higher with (68Ga-DOTATATE than with (68Ga-DOTATOC and (68Ga-DOTANOC. The Vt for tumor was higher with (68Ga-DOTATATE than with (68Ga-DOTANOC and relatively similar to that of (68Ga-DOTATOC. CONCLUSIONS: This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with (68Ga-DOTATATE and (68Ga-DOTATOC, uptake was higher with (68Ga-DOTATATE in the tumor than with (68Ga-DOTANOC and (68Ga-DOTATOC, suggesting a higher diagnostic value of (68Ga-DOTATATE for detecting meningiomas.

  9. GaN/AlGaN nanocavities with AlN/GaN Bragg reflectors grown in AlGaN nanocolumns by plasma assisted MBE

    Energy Technology Data Exchange (ETDEWEB)

    Ristic, J.; Calleja, E.; Fernandez-Garrido, S. [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s n, 28040 Madrid (Spain); Trampert, A.; Jahn, U.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Povoloskyi, M.; Carlo, A. Di [Dept. di Ingegneria Elettronica, Universita di Roma ' ' Tor Vegata' ' , 00133 Roma (Italy)

    2005-02-01

    The successful growth of AlGaN nanocolumns by plasma assisted MBE, with different Al compositions, opened the way for achieving nano-heterostructures including GaN Quantum Discs (QDss). The luminescence emission from the QDss embedded in the AlGaN nanocolumns was tuned by changing their thickness and/or the Al composition of the barriers. Such a nano-heterostructure was then enclosed between two AlN/GaN Distributed Bragg Reflectors (DBR), with nominal reflectivities of 90 and 50%. The choice of the AlN/GaN bilayers for the DBRs allowed to reach these reflectivity values with a significantly lower number of periods, as compared to the AlGaN/GaN stacks. The resulting nanocavity has been characterized by cathodoluminescence (CL), and Scanning and Transmission Electron Microscopy (SEM, TEM). CL measurements show that the emission from the nanocavity is quite close to the targeted value. TEM data points to the need of optimized conditions to grow AlN columnar layers in order to avoid the lateral overgrowth in the columnar nanostructure. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Accelerated aging of GaAs concentrator solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  11. Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

    Science.gov (United States)

    Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

    2017-03-01

    The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

  12. GaIn As Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE)

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz Vazquez, F E; Mishurnyi, V A; Gorbatchev, A Yu; De Anda, F [Universidad Autonoma de San Luis Potosi, Instituto de Investigation en Comunicacion Optica, Av. Karakorum 1470, Col. Lomas 4a Sec., San Luis Potosi, SLP, CP 78210 (Mexico); Elyukhin, V A, E-mail: fcoe_ov@prodigy.net.m, E-mail: andre@cactus.iico.uaslp.m [CINVESTAV-IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico D.F., CP 07360 (Mexico)

    2009-05-01

    The majority of the semiconductor structures with QD today are grown by MBE and MOCVD. It is known that the best material quality can be achieved by LPE because, in contrast to MBE and MOCVD, this method is realized at near-equilibrium conditions. To develop QD LPE technology first of all it is necessary to find out a growth technique allowing the crystallization of epitaxial materials with very small volume. This can be done by means of different techniques. In this work we apply a low temperature short-time growth method, which allows the production not only of single, but also of multilayer heterostructures. We have grown Ga{sub x}In{sub 1-z}As QD on GaAs (100) substrates at 450 C. The details of the QD formation, depending on composition of the Ga{sub x}In{sub -x} As solid solutions, have been studied by atom-force microscopy. The photoluminescence spectra of investigated samples show, in addition to a short-wave GaAs related peak, a longer wavelength line, which disappears after removal of the grown GaInAs material using an etching solution. This fact, together with atom-force microscopy results can be interpreted as a proof that QD heterostructures were grown successfully by LPE.

  13. Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing of GaN

    Science.gov (United States)

    Wang, Jie; Wang, Tongqing; Pan, Guoshun; Lu, Xinchun

    2016-08-01

    Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing (CMP) of GaN were deeply investigated in this paper. Working as an ideal homogeneous substrate material in LED industry, GaN ought to be equipped with a smooth and flat surface. Taking the strong chemical stability of GaN into account, photocatalytic oxidation technology was adopted in GaN CMP process to realize efficient removal. It was found that, because of the improved reaction rate of photocatalytic oxidation, GaN material removal rate (MRR) increases by a certain extent with catalyst concentration increasing. Cross single line analysis on the surface after polishing by Phase Shift MicroXAM-3D was carried out to prove the better removal effect with higher catalyst concentration. Ultraviolet intensity field in H2O2-SiO2-based polishing system was established and simulated, revealing the variation trend of ultraviolet intensity around the outlet of the slurry. It could be concluded that, owing to the higher planarization efficiency and lower energy damage, the UV lamp of 125 W is the most appropriate lamp in this system. Based on the analysis, defects removal model of this work was proposed to describe the effects of higher catalyst concentration and higher power of UV lamp.

  14. Measurement of GaAs start duration in different solution concentration using infrared images

    Institute of Scientific and Technical Information of China (English)

    LIU Lin; YE YuTang; WU YunFeng; FANG Liang; LU JiaJia

    2008-01-01

    This paper proposes a new infrared method to measure the start duration of GaAs substrate in chemi-cal etching. When etching starts, the temperature of liquid-film will change because of heat release in the chemical reaction. As a result, the start duration of GaAs can be tested by collecting real-time in-frared thermal images in the course of temperature variation. Both theoretical analysis and experi-mental results show that the line shape liquid film of a 2-mm width is a good monitoring subject. By making use of the grey distribution change of a certain cross section of the line shape liquid film, the start duration of reaction between GaAs and H2SO4-H2O2-H2O is obtained. The start durations of reac-tion between GaAs substrate and H2SO4: H2O2:H2O (=5:1:50 and 15:3:50) solution are about 0.2 s and 0.3-0.4 s, respectively. This result and relative method will impulse the research of wet chemical etching technology of GaAs and so on.

  15. A Ka-band 22 dBm GaN amplifier MMIC

    Institute of Scientific and Technical Information of China (English)

    Wang Dongfang; Chen Xiaojuan; Yuan Tingting; Wei Ke; Liu Xinyu

    2011-01-01

    A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and process.This is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier MMICs.The single stage CPW MMIC utilizes an AIGaN/GaN HEMT with a gate-length of 0.25 μm and a gate-width of 2 × 75 μm.Under Vds =10 V,continuous-wave operating conditions,the amplifier has a 1.5 GHz operating bandwidth.It exhibits a linear gain of 6.3 dB,a maximum output power of 22 dBm and a peak PAE of 9.5% at 26.5 GHz.The output power density of the AIGaN/GaN HEMT in the MMIC reaches 1 W/mm at Ka-band under the condition of Vds =10 V.

  16. GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

    Energy Technology Data Exchange (ETDEWEB)

    Taboada, A. G., E-mail: gonzalez@phys.ethz.ch; Kreiliger, T.; Falub, C. V.; Känel, H. von [Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg. 1, CH-8093 Zürich (Switzerland); Meduňa, M. [Department of Condensed Matter Physics, Masaryk University, Kotlářská 2, CZ-61137 Brno (Czech Republic); CEITEC, Masaryk University Kamenice 5, CZ-60177 Brno (Czech Republic); Salvalaglio, M.; Miglio, L. [L-NESS, Department of Materials Science, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano (Italy); Isa, F. [Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg. 1, CH-8093 Zürich (Switzerland); L-NESS and Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy); Barthazy Meier, E.; Müller, E. [Scientific Center for Optical and Electron Microscopy (ScopeM), ETH Zürich, Auguste-Piccard-Hof 1, CH-8093 Zürich (Switzerland); Isella, G. [L-NESS and Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy)

    2016-02-07

    Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of (111) planes and an apex formed by (137) and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images.

  17. EPA Recognizes Whole Foods Market in Marietta, Ga for Reducing Food Waste

    Science.gov (United States)

    ATLANTA - Today, U.S. Environmental Protection Agency (EPA) Regional Administrator Heather McTeer Toney recognized the Whole Foods Market Merchant Walk Marietta Store in Georgia for the store's achievements in EPA's Food Recovery Challenge. Whole Fo

  18. Role of electronic correlations in Ga

    KAUST Repository

    Zhu, Zhiyong

    2011-06-13

    An extended around mean field (AMF) functional for less localized pelectrons is developed to quantify the influence of electronic correlations in α-Ga. Both the local density approximation (LDA) and generalized gradient approximation are known to mispredict the Ga positional parameters. The extended AMF functional together with an onsite Coulomb interaction of Ueff=1.1 eV, as obtained from constraint LDA calculations, reduces the deviations by about 20%. The symmetry lowering coming along with the electronic correlations turns out to be in line with the Ga phase diagram.

  19. Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guang-Chen; FENG Shi-Wei; HU Pei-Feng; ZHAO Yan; GUO Chun-Sheng; XU Yang; CHEN Tang-Sheng; JIANG Yi-Jian

    2011-01-01

    Channel temperature measurements of multi-finger AlGaN/GaN HEMTs by forward Schottky characteristics are presented. The temperature dependence of the forward gate-source Schottky junction voltage is investigated and it is used as the temperature sensitive parameter (TSP) by pulsed switching technique. The channel-to-mounting thermal resistance of the tested AlGaN/GaN HEMT sample is 19.6℃/W. Compared with both the measured results by micro-Raman method and simulated results of a three-dimensional heat conduction model, the physical meaning of the channel temperature for AlGaN/GaN HEMT tested by pulsed switching electrical TSP method is investigated quantitatively for the first time.

  20. 60Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

    Institute of Scientific and Technical Information of China (English)

    WANG Yan-Ping; LUO Yin-Hong; WANG Wei; ZHANG Ke-Ying; GUO Hong-Xia; GUO Xiao-Qiang; WANG Yuan-Ming

    2013-01-01

    The testing techniques and experimental methods of the 60Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established.The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically,and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out.The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated,and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained.