Eyelid bump

Science.gov (United States)

... It appears as a red, swollen bump that looks like a pimple. It is often tender to the touch. Causes A stye is caused by a blockage of one of the oil glands in the eyelids. This allows bacteria to grow inside the blocked gland. Styes are ...

The reminiscence bump in autobiographical memory and for public events

DEFF Research Database (Denmark)

Koppel, Jonathan; Berntsen, Dorthe

2016-01-01

of public events. We did so between-subjects, through two cueing methods administered within-subjects, the cue word method and the important memories method. For word-cued memories, we found a similar bump from ages 5 to 19 for both types of memories. However, the bump was more pronounced...... for autobiographical memories. For most important memories, we found a bump from ages 20 to 29 in autobiographical memory, but little discernible age pattern for public events. Rather, specific public events (e.g., the Fall of the Berlin Wall) dominated recall, producing a chronological distribution characterised......The reminiscence bump has been found for both autobiographical memories and memories of public events. However, there have been few comparisons of the bump across each type of event. In the current study, therefore, we compared the bump for autobiographical memories versus the bump for memories...

Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs

International Nuclear Information System (INIS)

Unno, Y.; Hanagaki, K.; Hori, R.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Kamada, S.; Yamamura, K.; Yamamoto, H.; Takashima, R.; Tojo, J.; Kono, T.; Nagai, R.; Saito, S.; Sugibayashi, K.; Hirose, M.; Jinnouchi, O.; Sato, S.; Sawai, H.; Hara, K.

2017-01-01

We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n + -in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

Speed Bumps on the Road to Sustainability - Energy Technology and Geopolitics

International Nuclear Information System (INIS)

Mandil, C.; Taylor, P.; Van Der Linde, C.; Buchner, B.; Ramsay, W.C.; Lipponen, J.; Meier, A.; Berkeley, L.; Di Paola-Galloni, J.L.; Jaureguy-Naudin, M.; Charpin, J.M.; Segar, Ch.; Zaleski, P.; Lesourne, J.; Pires Santos, A.; Menard, D.; Neuhoff, K.; Oettinger, G.

2011-01-01

This document gathers the slides of the available presentations given at the 2011 issue of the annual Conference of the Ifri (French Institute of International Relations) Energy Program: 1 - An Energy revolution under way (Peter Taylor, Head of the Energy Technology Division, International Energy Agency); 2 - A look back at Cancun: 'top down' versus 'bottom up' (Barbara Buchner, Director of the CPI - Climate Policy Initiative - Venice office; 3 - CCS: Still in the Starting Blocks? (Juho Lipponen, Head of CCS Unit, International Energy Agency); 4 - Energy Efficiency: Does Anyone Care? (Alan Meier, Senior Scientist and Principal Investigator, Lawrence Berkeley National Laboratory); 5 - The Transport Sector: Anything Goes? (Jean-Luc di Paola-Galloni, Corporate Vice-President, Sustainable Development and External Affairs, Valeo Group); 6 - The Mediterranean Ring: Power or Politics? (Jean-Michel Charpin, Inspecteur General des Finances); 7 - Iran gas and Iraq oil (Chris Segar, Regional Analyst/Middle East and North Africa, International Energy Agency); 8 - Nuclear Power: New Players, New Game, New Rules (Pierre Zaleski, General delegate for the Center of Geopolitics of Energy and Raw Materials, Universite Paris-Dauphine); 9 - The Grid: a Generic Speed Bump (Antonio Pires Santos, Energy and Utilities Industry Leader, Southwest Europe, IBM); 10 - Intellectual Property Rights/Technology transfer (Dominique Menard, Partner, Hogan Lovells (Paris) LLP); 11 - Energy Markets: Conducive to Sustainability (Karsten Neuhoff, Director of the CPI - Climate Policy Initiative - Berlin office, German Institute for Economic Research, DIW Berlin)

Speed Bumps on the Road to Sustainability - Energy Technology and Geopolitics

Energy Technology Data Exchange (ETDEWEB)

Mandil, C.; Taylor, P.; Van Der Linde, C.; Buchner, B.; Ramsay, W.C.; Lipponen, J.; Meier, A.; Berkeley, L.; Di Paola-Galloni, J.L.; Jaureguy-Naudin, M.; Charpin, J.M.; Segar, Ch.; Zaleski, P.; Lesourne, J.; Pires Santos, A.; Menard, D.; Neuhoff, K.; Oettinger, G.

2011-07-01

This document gathers the slides of the available presentations given at the 2011 issue of the annual Conference of the Ifri (French Institute of International Relations) Energy Program: 1 - An Energy revolution under way (Peter Taylor, Head of the Energy Technology Division, International Energy Agency); 2 - A look back at Cancun: 'top down' versus 'bottom up' (Barbara Buchner, Director of the CPI - Climate Policy Initiative - Venice office; 3 - CCS: Still in the Starting Blocks? (Juho Lipponen, Head of CCS Unit, International Energy Agency); 4 - Energy Efficiency: Does Anyone Care? (Alan Meier, Senior Scientist and Principal Investigator, Lawrence Berkeley National Laboratory); 5 - The Transport Sector: Anything Goes? (Jean-Luc di Paola-Galloni, Corporate Vice-President, Sustainable Development and External Affairs, Valeo Group); 6 - The Mediterranean Ring: Power or Politics? (Jean-Michel Charpin, Inspecteur General des Finances); 7 - Iran gas and Iraq oil (Chris Segar, Regional Analyst/Middle East and North Africa, International Energy Agency); 8 - Nuclear Power: New Players, New Game, New Rules (Pierre Zaleski, General delegate for the Center of Geopolitics of Energy and Raw Materials, Universite Paris-Dauphine); 9 - The Grid: a Generic Speed Bump (Antonio Pires Santos, Energy and Utilities Industry Leader, Southwest Europe, IBM); 10 - Intellectual Property Rights/Technology transfer (Dominique Menard, Partner, Hogan Lovells (Paris) LLP); 11 - Energy Markets: Conducive to Sustainability (Karsten Neuhoff, Director of the CPI - Climate Policy Initiative - Berlin office, German Institute for Economic Research, DIW Berlin)

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

Science.gov (United States)

Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

2018-02-26

Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

Light and velocity curve bumps for BW Vulpeculae

International Nuclear Information System (INIS)

Pesnell, W.D.; Cox, A.N.

1980-01-01

Bumps in the light and radial velocity curves of the Beta Cephei star BW Vulpeculae were modeled. Two mechanisms, a resonance phenomena and non-linear pulsations, were investigated. The resonance condition was clearly not fulfilled, the calculated period ratio being approximately 0.60, where a value of 0.50 L +- 0.03 is required for resonance. In the non-linear calculation, the bump appears, with the correct phase, but was found at an amplitude that is too large. Further, the light curve does not show any bump-like feature. The cause of the bump is the large spurious boost given the star's velocity field by the solution methods. The calculated periods of the stellar models are shorter than those of previous calculations, enhancing the possibility that these stars pulsate in a radial fundamental mode

Structural integrity of power generating speed bumps made of concrete foam composite

Science.gov (United States)

Syam, B.; Muttaqin, M.; Hastrino, D.; Sebayang, A.; Basuki, W. S.; Sabri, M.; Abda, S.

2018-02-01

In this paper concrete foam composite speed bumps were designed to generate electrical power by utilizing the movements of commuting vehicles on highways, streets, parking gates, and drive-thru station of fast food restaurants. The speed bumps were subjected to loadings generated by vehicles pass over the power generating mechanical system. In this paper, we mainly focus our discussion on the structural integrity of the speed bumps and discuss the electrical power generating speed bumps in another paper. One aspect of structural integrity is its ability to support designed loads without breaking and includes the study of past structural failures in order to prevent failures in future designs. The concrete foam composites were used for the speed bumps; the reinforcement materials are selected from empty fruit bunch of oil palm. In this study, the speed bump materials and structure were subjected to various tests to obtain its physical and mechanical properties. To analyze the structure stability of the speed bumps some models were produced and tested in our speed bump test station. We also conduct a FEM-based computer simulation to analyze stress responses of the speed bump structures. It was found that speed bump type 1 significantly reduced the radial voltage. In addition, the speed bump is equipped with a steel casing is also suitable for use as a component component in generating electrical energy.

Decomposing the sales promotion bump with store data

NARCIS (Netherlands)

van Heerde, H.J.; Leeflang, P.S.H.; Wittink, D.R.

2004-01-01

Sales promotions generate substantial short-term sales increases. To determine whether the sales promotion bump is truly beneficial from a managerial perspective, we propose a system of store-level regression models that decomposes the sales promotion bump into three parts: cross-brand effects

Technological process and optimum design of organic materials vacuum pyrolysis and indium chlorinated separation from waste liquid crystal display panels

Energy Technology Data Exchange (ETDEWEB)

Ma, En; Xu, Zhenming, E-mail: zmxu@sjtu.edu.cn

2013-12-15

Highlights: • The vacuum pyrolysis–vacuum chlorinated separation system was proposed to recover the waste LCD panel. • The system can recycle the whole waste LCD panels efficiently without negative effects to environment. • The 82.03% of the organic materials was reclaimed. All pyrolysis products can be utilized by a reasonable way. • The separation of indium was optimized by the central composite design (CCD) under response surface methodology (RSM). • The recovery ratio of indium was further increased to 99.97%. -- Abstract: In this study, a technology process including vacuum pyrolysis and vacuum chlorinated separation was proposed to convert waste liquid crystal display (LCD) panels into useful resources using self-design apparatuses. The suitable pyrolysis temperature and pressure are determined as 300 °C and 50 Pa at first. The organic parts of the panels were converted to oil (79.10 wt%) and gas (2.93 wt%). Then the technology of separating indium was optimized by central composite design (CCD) under response surface methodology (RSM). The results indicated the indium recovery ratio was 99.97% when the particle size is less than 0.16 mm, the weight percentage of NH{sub 4}Cl to glass powder is 50 wt% and temperature is 450 °C. The research results show that the organic materials, indium and glass of LCD panel can be recovered during the recovery process efficiently and eco-friendly.

Germanium and indium

Science.gov (United States)

Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Germanium and indium are two important elements used in electronics devices, flat-panel display screens, light-emitting diodes, night vision devices, optical fiber, optical lens systems, and solar power arrays. Germanium and indium are treated together in this chapter because they have similar technological uses and because both are recovered as byproducts, mainly from copper and zinc sulfides.The world’s total production of germanium in 2011 was estimated to be 118 metric tons. This total comprised germanium recovered from zinc concentrates, from fly ash residues from coal burning, and from recycled material. Worldwide, primary germanium was recovered in Canada from zinc concentrates shipped from the United States; in China from zinc residues and coal from multiple sources in China and elsewhere; in Finland from zinc concentrates from the Democratic Republic of the Congo; and in Russia from coal.World production of indium metal was estimated to be about 723 metric tons in 2011; more than one-half of the total was produced in China. Other leading producers included Belgium, Canada, Japan, and the Republic of Korea. These five countries accounted for nearly 95 percent of primary indium production.Deposit types that contain significant amounts of germanium include volcanogenic massive sulfide (VMS) deposits, sedimentary exhalative (SEDEX) deposits, Mississippi Valley-type (MVT) lead-zinc deposits (including Irish-type zinc-lead deposits), Kipushi-type zinc-lead-copper replacement bodies in carbonate rocks, and coal deposits.More than one-half of the byproduct indium in the world is produced in southern China from VMS and SEDEX deposits, and much of the remainder is produced from zinc concentrates from MVT deposits. The Laochang deposit in Yunnan Province, China, and the VMS deposits of the Murchison greenstone belt in Limpopo Province, South Africa, provide excellent examples of indium-enriched deposits. The SEDEX deposits at Bainiuchang, China (located in

Thermohydrodynamic analysis of airfoil bearing based on bump foil structure

Directory of Open Access Journals (Sweden)

S.Y. Maraiy

2016-09-01

Full Text Available The load carrying capacity of the gas foil bearing depends on the material properties and the configuration of the underlying bump strip’s structure. This paper presents three different cases for selecting the dimensions of the foil bearing to guarantee the highest possible load carrying capacity. It focuses on three main parameters that affect the compliance number; these parameters are the length of bump in θ direction, the pitch of bump foil, and the thickness of bump foil. It also studies the effect of changing these parameters on load carrying capacity according to both isothermal and thermohydrodynamic approaches.

Shrinking of bumps by drawing scintillating fibres through a hot conical tool

CERN Document Server

Rodrigues Cavalcante, Ana Barbara; Gavardi, Laura; Joram, Christian; Kristic, Robert; Pierschel, Gerhard; Schneider, Thomas

2016-01-01

The LHCb SciFi tracker will be based on scintillating fibres with a nominal diameter of 250 $\\mu$m. A small length fraction of these fibres shows millimetre-scale fluctuations of the diameter, also known as bumps and necks. In particular, bumps exceeding a diameter of about 350 $\\mu$m are problematic as they can distort the winding pattern of the fibre mats over more extended regions. We present a method to reduce the diameter of large bumps to a diameter of 350 $\\mu$m by locally heating and pulling the fibre through a conical tool. The method has been proven to work for bumps up to 450 – 500 $\\mu$m diameter. Larger bumps need to be treated manually by a cut-and-glue technique which relies on UV-curing instant glue. The bump shrinking and cut-and-glue processes were integrated in a fibre diameter scanner at CERN. The central scanning and bump shrinking of all fibres is expected to minimise bump related issues at the four mat winding centres of the SciFi project.

Load Express Analysis of the Car Running Against the Bumps in the Road

Directory of Open Access Journals (Sweden)

Yu. N. Baryshnikov

2014-01-01

Full Text Available In many fields of technology when calculating the strength there are options available to choose design cases and loads in compliance with different operating conditions. In the automotive industry there are no such standards yet. This is due to both a variety of operating conditions, and a complexity of calculating the actual loads.K. Ert`s article is considered to be a pioneering work in this regard. There the author makes a hypothesis of the linear dependence of torque acting on the car, and of the height of bumps in the road. All formulas were obtained for vehicles with the leaf spring suspensions. An appearing entire class of new cars made it necessary to generalize the experience.This paper proposes an engineering method for calculating the vertical loads acting on the car when bumping in the road. We derive general formulas to calculate the height of the road bumps (irregularities on the way of a running car with various types of suspension. A dump truck BELAZ with various types nonlinear of suspension has been used to test the obtained formulas. The results analysis has shown that under equal conditions a car with dependent rear suspension will bear the lower loads than its prototype with a different type of suspension.The paper presents the relationships between the hights of bumps, which cause an equivalent load when different wheels bump against them. It shows a relation between the loads acting on the car when bumping against the same road irregularity by different wheels. The practical significance of the equations is the possibility to calculate loads in various cases in the road using the one-test results. A comparative results analysis of analytical calculation of loads and numerical experiments is based on the nonlinear model of the vehicle.The proposed method is an effective tool for the rapid analysis of loads in the design and fine-tuning the car.

Bump masses for BL Her stars

International Nuclear Information System (INIS)

Davis, C.G.

1982-01-01

The masses of classical Cepheids can be determined by using the phase of the Hertzsprung bump on the light or velocity curve, Cox-Stewart opacities, and nonlinear pulsation theory. The fact that these bump masses are some 60% lower than the evolutionary masses raises some questions about this approach. In support of our method, we calculate the light curve for BL Her, a population II Cepheid, with an observed bump on the declining portion of its light curve. The nonlinear hydrodynamic model we use (Davis and Davison - 1978) resolves the light curve by dynamic zoning and allows us the opportunity to make a direct comparison of the calculated light curve to the observations, using a prescribed mass, luminosity and effective temperature. The parameters for BL Her are from a linear model (Hodson, Cox, and King - 1982) that has nearly the correct period (1./sup d/2) and the correct period ratio from resonance theory (π 2 /π 0 = 0.53) for a bump to appear on the declining portion of the light curve as observed. These parameters are: M = 0.55 M, L = 95.0 L, and T/sub eff/ = 6500 K. This mass is near the evolutionary mass as described by Schwartzschild and Haerm (1970). The model results agree well with the observations and the color-T/sub eff/ relation has the same slope as that observed for RR Lyrae stars by the Oke, Giver and Searle (1965) relationship

The Effects of Campus Bump on Drivers’ Fixation Dispersion and Speed Reduction

Directory of Open Access Journals (Sweden)

Qian Xu

2015-01-01

Full Text Available To evaluate the effects of campus speed bumps on drivers’ speed and fixation distribution, a quasinaturalistic driving test was conducted on a Chinese campus. Seven randomly selected drivers, wearing the Dikablis eye tracking devices, were required to drive an OPEL SUV passing the speed bumps. The area close to the bump was divided into ten subsegments (15 m for each one. The degree of fixation dispersion within each subsegment was defined as the distance from each subcenter to the whole fixation center. All traffic data were recorded using mounted camera, and the trajectories were extracted in Matlab. The speed and trajectory data was divided into two groups: the before group for bump-free case and the after group for a 5 cm bump case. The observational before-after analysis shows statistical significance between the two cases. The individual vehicular speed analysis reveals that bump reduces nearly 60% of vehicles’ speeds to a certain extent within the distance from 30 m upstream to 15 m downstream. The drivers’ fixation points begin to disperse 30–45 m before they see the bump, and it falls back to normal level 15–30 m downstream of the bump. These findings will help engineers install speed bumps at the most appropriate locations.

The Physics of Bump Drafting in Car Racing

Science.gov (United States)

Fiolhais, Miguel C. N.; Amor dos Santos, Susana

2014-01-01

The technique of bump drafting, also known as two-car drafting in motorsports, is analysed in the framework of Newtonian mechanics and simple aerodynamic drag forces. As an apparent unnatural effect that often pleases the enthusiasts of car racing, bump drafting provides a unique pedagogical opportunity for students to gain insights into the…

Secondary indium production from end-of-life liquid crystal displays

Energy Technology Data Exchange (ETDEWEB)

Amato, Alessia; Rocchetti, Laura; Fonti, Viviana; Ruello, Maria Letizia; Beolchini, Francesca [Universita Politecnica of Marche, DISVA, Via Brecce Bianche, 60131 Ancona (Italy)

2016-12-15

In 2014, the European Union identified 20 raw materials critical for economic importance and high supply risk. Indium, used in several innovative technologies, is among such critical raw materials. Generally, it is mined as a by-product of zinc from a mineral named sphalerite, with a concentration between 1 and 100 ppm. Currently, the largest producer of indium is China and about 84% of the worldwide indium consumption is used for liquid crystal display (LCD) production, in particular to form an indium-tin-oxide (ITO) film with transparent conductor properties. The fast evolution of LCD technologies caused a double effect: the growth of indium demand and an increase of waste electrical and electronic equipment (WEEE). Considering these two factors, the aim of this study is to make the end-of-life LCDs a secondary indium resource. With this purpose, an indium recovery process was developed carrying out an acidic leaching, followed by a zinc cementation. The first step allowed a complete indium extraction using 2M sulfuric acid at 80 C for 10 min. The problem of low indium concentration in the scraps (around 150 ppm) was overcome using a cross-current configuration in the leaching phase that allowed an increase of metal concentration and a decrease of reagents consumption. An indium recovery higher than 90% was obtained in the final cementation step, using 5 g/L of zinc powder at pH 3 and 55 C for 10 min. Considering its high efficiency, this process is promising in a context of circular economy, where a waste becomes a resource. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

Science.gov (United States)

Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

2014-11-04

Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

The Availability of Indium: The Present, Medium Term, and Long Term

Energy Technology Data Exchange (ETDEWEB)

Lokanc, Martin [Colorado School of Mines, Golden, CO (United States); Eggert, Roderick [Colorado School of Mines, Golden, CO (United States); Redlinger, Michael [Colorado School of Mines, Golden, CO (United States)

2015-10-01

Demand for indium is likely to increase if the growth in deployment of the copper-indium-gallium-selenide (CIGS) and III-V thin-film photovoltaic technologies accelerates. There are concerns about indium supply constraints since it is relatively rare element in the earth's crust and because it is produced exclusively as a byproduct.

Visual Analysis of Speeding Bumps Using Floating Car Dataset

DEFF Research Database (Denmark)

Kveladze, Irma; Agerholm, Niels

2018-01-01

measures, and also their influence on the driving behaviour of vehicles from a temporal perspective. To fill this gap and understand these aspects, in this research we propose visual analytics techniques. To explore the influence of the bumps on speed change behavior of vehicles, several use case studies...... in three different cities were selected with close cooperation of a traffic domain expert. The aim was first to study influence of the bumps on vehicle volume and speeding from a time perspective. And then, establish any connection between speed bump intervals and vehicle speeding in the selected use cases...

Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

Science.gov (United States)

Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

2011-11-15

Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

International joint research project of venture seeds excavating type in fiscal 1999 (revised) - venture seeds No.3. Report on achievements in developing bump forming technologies for high-density semiconductor connection; 1999 nendo (hosei) venture seeds hakkutsugata kokusai kyodo kenkyu jigyo - venture seeds No.3. Komitsudo handotai setsuzokuyo bump gata keisei gijutsu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

Development has been advanced on a new flip chip technology with high efficiency and reliability to mount on lead frames and substrates the semiconductor devices that have been made higher in density and function and smaller in size. Specifically, discussions were given on a bump forming technology using micro balls with high accuracy and sphericity. With this technology, bumps are formed with high accuracy and efficiency by transferring and bonding the micro balls onto electrodes. Activities were taken in the following five areas: 1) discussions on the micro ball arranging technology, 2) optimization and evaluation on bed films, 3) manufacture and evaluation on micro balls, 4) overall evaluation and improvement discussion on quality and cost, and 5) analysis of thermal stress on soldered balls. In Item 1), micro balls are transferred onto pads after removing excess balls by sucking them into a suction head while having the micro balls float in a container by means of vibration. The suction arrangement plates were discussed and the suction system was optimized, whereas it was verified that balls with diameter of 100 {mu} m can be transferred and bonded onto pads of the chips without excess and insufficiency. (NEDO)

Comparison of Off-Line IR Bump and Action-Angle Kick Minimization

CERN Document Server

Luo, Yun; Ptitsyn, Vadim; Trbojevic, Dejan; Wei, Jie

2005-01-01

The interaction region bump (IR bump) nonlinear correction method has been used for the sextupole and octupole field error on-line corrections in the Relativistic Heavy Ion Collider (RHIC). Some differences were found for the sextupole and octupole corrector strengths between the on-line IR bump correction and the predictions from the action-angle kick minimization. In this report we compare the corrector strengths from these two methods based on the RHIC Blue ring lattice with the IR nonlinear modeling. The comparison confirms the differences between resulting corrector strengths. And the reason for the differences is found and discussed. It is followed by a further discussion of the operational IR bump applications to the octupole, and skew sextupole and skew quadrupole field error corrections.

A review of the world market of indium (Economy of indium)

International Nuclear Information System (INIS)

Naumov, A.V.

2005-01-01

A review of the current state of the world and Russian markets of indium and indium-containing products was made based on the publications of the last years. Main fields of indium application are given, in particular, its using for neutron absorbing regulating rods in nuclear reactors. The second γ-radiation resulted from neutron absorption allows using indium as a neutron detector. Indium market stabilization is expected due to supply from China and South Korea [ru

Cross-Validation of Survival Bump Hunting by Recursive Peeling Methods.

Science.gov (United States)

Dazard, Jean-Eudes; Choe, Michael; LeBlanc, Michael; Rao, J Sunil

2014-08-01

We introduce a survival/risk bump hunting framework to build a bump hunting model with a possibly censored time-to-event type of response and to validate model estimates. First, we describe the use of adequate survival peeling criteria to build a survival/risk bump hunting model based on recursive peeling methods. Our method called "Patient Recursive Survival Peeling" is a rule-induction method that makes use of specific peeling criteria such as hazard ratio or log-rank statistics. Second, to validate our model estimates and improve survival prediction accuracy, we describe a resampling-based validation technique specifically designed for the joint task of decision rule making by recursive peeling (i.e. decision-box) and survival estimation. This alternative technique, called "combined" cross-validation is done by combining test samples over the cross-validation loops, a design allowing for bump hunting by recursive peeling in a survival setting. We provide empirical results showing the importance of cross-validation and replication.

Development of high data readout rate pixel module and detector hybridization at Fermilab

International Nuclear Information System (INIS)

Zimmermann, Sergio

2001-01-01

This paper describes the baseline design and a variation of the pixel module to handle the data rate required for the BTeV experiment at Fermilab. The present prototype has shown good electrical performance characteristics. Indium bump bonding is proven to be capable of successful fabrication at 50 micron pitch on real detectors. For solder bumps at 50 micron pitch, much better results have been obtained with the fluxless PADS processed detectors. The results are adequate for our needs and our tests have validated it as a viable technology

Stability of bumps in piecewise smooth neural fields with nonlinear adaptation

KAUST Repository

Kilpatrick, Zachary P.

2010-06-01

We study the linear stability of stationary bumps in piecewise smooth neural fields with local negative feedback in the form of synaptic depression or spike frequency adaptation. The continuum dynamics is described in terms of a nonlocal integrodifferential equation, in which the integral kernel represents the spatial distribution of synaptic weights between populations of neurons whose mean firing rate is taken to be a Heaviside function of local activity. Discontinuities in the adaptation variable associated with a bump solution means that bump stability cannot be analyzed by constructing the Evans function for a network with a sigmoidal gain function and then taking the high-gain limit. In the case of synaptic depression, we show that linear stability can be formulated in terms of solutions to a system of pseudo-linear equations. We thus establish that sufficiently strong synaptic depression can destabilize a bump that is stable in the absence of depression. These instabilities are dominated by shift perturbations that evolve into traveling pulses. In the case of spike frequency adaptation, we show that for a wide class of perturbations the activity and adaptation variables decouple in the linear regime, thus allowing us to explicitly determine stability in terms of the spectrum of a smooth linear operator. We find that bumps are always unstable with respect to this class of perturbations, and destabilization of a bump can result in either a traveling pulse or a spatially localized breather. © 2010 Elsevier B.V. All rights reserved.

Looking Down Under for a Circular Economy of Indium.

Science.gov (United States)

Werner, Tim T; Ciacci, Luca; Mudd, Gavin Mark; Reck, Barbara K; Northey, Stephen Alan

2018-02-20

Indium is a specialty metal crucial for modern technology, yet it is potentially critical due to its byproduct status in mining. Measures to reduce its criticality typically focus on improving its recycling efficiency at end-of-life. This study quantifies primary and secondary indium resources ("stocks") for Australia through a dynamic material-flow analysis. It is based on detailed assessments of indium mineral resources hosted in lead-zinc and copper deposits, respective mining activities from 1844 to 2013, and the trade of indium-containing products from 1988 to 2015. The results show that Australia's indium stocks are substantial, estimated at 46.2 kt in mineral resources and an additional 14.7 kt in mine wastes. Australian mineral resources alone could meet global demand (∼0.8 kt/year) for more than five decades. Discarded material from post-consumer products, instead, is negligible (43 t). This suggests that the resilience of Australia's indium supply can best be increased through efficiency gains in mining (such as introducing domestic indium refining capacity) rather than at the end of the product life. These findings likely also apply to other specialty metals, such as gallium or germanium, and other resource-dominated countries. Finally, the results illustrate that national circular economy strategies can differ substantially.

Two-Dimensional Bumps in Piecewise Smooth Neural Fields with Synaptic Depression

KAUST Repository

Bressloff, Paul C.; Kilpatrick, Zachary P.

2011-01-01

instability leads to the formation of a traveling spot. The local stability of a bump is determined by solutions to a system of pseudolinear equations that take into account the sign of perturbations around the circular bump boundary. © 2011 Society

Pain over speed bumps in diagnosis of acute appendicitis: diagnostic accuracy study.

Science.gov (United States)

Ashdown, Helen F; D'Souza, Nigel; Karim, Diallah; Stevens, Richard J; Huang, Andrew; Harnden, Anthony

2012-12-14

To assess the diagnostic accuracy of pain on travelling over speed bumps for the diagnosis of acute appendicitis. Prospective questionnaire based diagnostic accuracy study. Secondary care surgical assessment unit at a district general hospital in the UK. 101 patients aged 17-76 years referred to the on-call surgical team for assessment of possible appendicitis. Sensitivity, specificity, positive and negative predictive values, and positive and negative likelihood ratios for pain over speed bumps in diagnosing appendicitis, with histological diagnosis of appendicitis as the reference standard. The analysis included 64 participants who had travelled over speed bumps on their journey to hospital. Of these, 34 had a confirmed histological diagnosis of appendicitis, 33 of whom reported increased pain over speed bumps. The sensitivity was 97% (95% confidence interval 85% to 100%), and the specificity was 30% (15% to 49%). The positive predictive value was 61% (47% to 74%), and the negative predictive value was 90% (56% to 100%). The likelihood ratios were 1.4 (1.1 to 1.8) for a positive test result and 0.1 (0.0 to 0.7) for a negative result. Speed bumps had a better sensitivity and negative likelihood ratio than did other clinical features assessed, including migration of pain and rebound tenderness. Presence of pain while travelling over speed bumps was associated with an increased likelihood of acute appendicitis. As a diagnostic variable, it compared favourably with other features commonly used in clinical assessment. Asking about speed bumps may contribute to clinical assessment and could be useful in telephone assessment of patients.

Preparation of High-purity Indium Oxalate Salt from Indium Scrap by Organic Acids

International Nuclear Information System (INIS)

Koo, Su-Jin; Ju, Chang-Sik

2013-01-01

Effect of organic acid on the preparation of indium-oxalate salt from indium scraps generated from ITO glass manufacturing process was studied. Effects of parameters, such as type and concentration of organic acids, pH of reactant, temperature, reaction time on indium-oxalate salt preparation were examined. The impurity removal efficiency was similar for both oxalic acid and citric acid, but citric acid did not make organic acid salt with indium. The optimum conditions were 1.5 M oxalic acid, pH 7, 80 .deg. C, and 6 hours. On the other hand, the recoveries increased with pH, but the purity decreased. The indium-oxalate salt purity prepared by two cycles was 99.995% (4N5). The indium-oxalate salt could be converted to indium oxide and indium metal by substitution reaction and calcination

Stability of bumps in piecewise smooth neural fields with nonlinear adaptation

KAUST Repository

Kilpatrick, Zachary P.; Bressloff, Paul C.

2010-01-01

associated with a bump solution means that bump stability cannot be analyzed by constructing the Evans function for a network with a sigmoidal gain function and then taking the high-gain limit. In the case of synaptic depression, we show that linear stability

Plastic deformation of indium nanostructures

International Nuclear Information System (INIS)

Lee, Gyuhyon; Kim, Ju-Young; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

2011-01-01

Highlights: → Indium nanopillars display two different deformation mechanisms. → ∼80% exhibited low flow stresses near that of bulk indium. → Low strength nanopillars have strain rate sensitivity similar to bulk indium. → ∼20% of compressed indium nanopillars deformed at nearly theoretical strengths. → Low-strength samples do not exhibit strength size effects. - Abstract: Mechanical properties and morphology of cylindrical indium nanopillars, fabricated by electron beam lithography and electroplating, are characterized in uniaxial compression. Time-dependent deformation and influence of size on nanoscale indium mechanical properties were investigated. The results show two fundamentally different deformation mechanisms which govern plasticity in these indium nanostructures. We observed that the majority of indium nanopillars deform at engineering stresses near the bulk values (Type I), with a small fraction sustaining flow stresses approaching the theoretical limit for indium (Type II). The results also show the strain rate sensitivity and flow stresses in Type I indium nanopillars are similar to bulk indium with no apparent size effects.

On the persistence of unstable bump-on-tail electron velocity distributions in the earth's foreshock

International Nuclear Information System (INIS)

Klimas, A.J.; Fitzenreiter, R.J.

1988-01-01

Further evidence for the persistence of bump-on-tail unstable reduced velocity distribution in the Earth's electron foreshock is presented. This persistence contradicts our understanding of quasi-linear saturation of the bump-on-tail instability; the distributions should be stabilized through velocity space diffusion too quickly to allow an observation of their unstable form. A modified theory for the saturation of the bump-on-tail instability in the Earth's foreshock is proposed and examined using numerical simulation and quasi-linear theoretical techniques. It is argued the mechanism due to Filbert and Kellogg and to Cairns which is responsible for the creation of the bump-on-tail velocity distribution in the foreshock is still operative during the evolution of the bump-on-tail instability. The saturated state of the plasma must represent a balance between this creation mechanism and velocity space diffusion; the saturated state is not determined by velocity space diffusion alone. Thus the velocity distribution of the saturated stat may still appear bump-on-tail unstable to standard linear analysis which does not take the creation mechanism into account. The bump-on-tail velocity distributions in the foreshock would then represent the state of the plasma after saturation of the bump-on-tail instability, not before

Stress Distribution in a Coal Seam before and after Bump Initiation

Directory of Open Access Journals (Sweden)

J. Vacek

2001-01-01

Full Text Available This paper deals with to the behaviour of open rock that occurs, for example, during longwall mining in coal mines, in deep tunnel, or shaft excavation.Longwall instability leads to extrusion of rock mass into an open space. This effect is mostly referred to as a bump, or a rock burst. For bumps to occur, the rock has to possess certain particular rock burst properties leading to accumulation of energy and the potential to release this energy. Such materials may be brittle, or the bumps may arise at the interfacial zones of two parts of the rock, that have principally different material properties.The solution is based on experimental and mathematical modelling. These two methods have to allow the problem to be studied on the basis of three presumptions: – the solution must be time dependent – the solution must allow the creation of crack in the rock mass – the solution must allow an extrusion of rock into an open space (bump effect

Two-Dimensional Bumps in Piecewise Smooth Neural Fields with Synaptic Depression

KAUST Repository

Bressloff, Paul C.

2011-01-01

We analyze radially symmetric bumps in a two-dimensional piecewise-smooth neural field model with synaptic depression. The continuum dynamics is described in terms of a nonlocal integrodifferential equation, in which the integral kernel represents the spatial distribution of synaptic weights between populations of neurons whose mean firing rate is taken to be a Heaviside function of local activity. Synaptic depression dynamically reduces the strength of synaptic weights in response to increases in activity. We show that in the case of a Mexican hat weight distribution, sufficiently strong synaptic depression can destabilize a stationary bump solution that would be stable in the absence of depression. Numerically it is found that the resulting instability leads to the formation of a traveling spot. The local stability of a bump is determined by solutions to a system of pseudolinear equations that take into account the sign of perturbations around the circular bump boundary. © 2011 Society for Industrial and Applied Mathematics.

Injection Bump Synchronization Study for the CERN PS

CERN Document Server

Serluca, Maurizio; Gilardoni, Simone; CERN. Geneva. ATS Department

2016-01-01

In the framework of the LHC Injector Upgrade (LIU) project the CERN PS injection kinetic energy will be upgraded from 1.4 to 2 GeV. The present injection bump is made by four bumpers in Straight Section (SS) 40, 42, 43, 44 and it will be converted in a five bumpers system to allow additional flexibility in the bump shape with a reduction of the proton losses during the bump closure. The injection section SS42 has being redesigned to accommodate a new eddy current septum which will host a new bumper magnet in the same vacuum vessel due to reduced longitudinal space availability. The synchronization and amplitude variation of the power converter of the in-vacuum bumper 42 with respect to the remaining outside vacuum bumpers 40, 41, 43, 44 can lead to orbit distortion and consequent losses during injection. In this note we present the experimental results from Machine Development (MD) studies along with simulations for the present system at 1.4 GeV to quantify the acceptable orbit distortion and the performance ...

Fluxless flip-chip bonding using a lead-free solder bumping technique

Science.gov (United States)

Hansen, K.; Kousar, S.; Pitzl, D.; Arab, S.

2017-09-01

With the LHC exceeding the nominal instantaneous luminosity, the current barrel pixel detector (BPIX) of the CMS experiment at CERN will reach its performance limits and undergo significant radiation damage. In order to improve detector performance in high luminosity conditions, the entire BPIX is replaced with an upgraded version containing an additional detection layer. Half of the modules comprising this additional layer are produced at DESY using fluxless and lead-free bumping and bonding techniques. Sequential solder-jetting technique is utilized to wet 40-μm SAC305 solder spheres on the silicon-sensor pads with electroless Ni, Pd and immersion Au (ENEPIG) under-bump metallization (UBM). The bumped sensors are flip-chip assembled with readout chips (ROCs) and then reflowed using a flux-less bonding facility. The challenges for jetting low solder volume have been analyzed and will be presented in this paper. An average speed of 3.4 balls per second is obtained to jet about 67 thousand solder balls on a single chip. On average, 7 modules have been produced per week. The bump-bond quality is evaluated in terms of electrical and mechanical properties. The peak-bump resistance is about 17.5 mΩ. The cross-section study revealed different types of intermetallic compounds (IMC) as a result of interfacial reactions between UBM and solder material. The effect of crystalline phases on the mechanical properties of the joint is discussed. The mean shear strength per bump after the final module reflow is about 16 cN. The results and sources of yield loss of module production are reported. The achieved yield is 95%.

Running bumps from stealth bosons

Science.gov (United States)

Aguilar-Saavedra, J. A.

2018-03-01

For the `stealth bosons' S, light boosted particles with a decay S → A A → q \\bar{q} q \\bar{q} into four quarks and reconstructed as a single fat jet, the groomed jet mass has a strong correlation with groomed jet substructure variables. Consequently, the jet mass distribution is strongly affected by the jet substructure selection cuts when applied on the groomed jet. We illustrate this fact by recasting a CMS search for low-mass dijet resonances and show a few representative examples. The mass distributions exhibit narrow and wide bumps at several locations in the 100-300 GeV range, between the masses of the daughter particles A and the parent particle S, depending on the jet substructure selection. This striking observation introduces several caveats when interpreting and comparing experimental results, for the case of non-standard signatures. The possibility that a single boosted particle decaying hadronically produces multiple bumps, at quite different jet masses, and depending on the event selection, brings the anomaly chasing game to the next level.

Running bumps from stealth bosons

International Nuclear Information System (INIS)

Aguilar-Saavedra, J.A.

2018-01-01

For the 'stealth bosons' S, light boosted particles with a decay S → AA → q anti qq anti q into four quarks and reconstructed as a single fat jet, the groomed jet mass has a strong correlation with groomed jet substructure variables. Consequently, the jet mass distribution is strongly affected by the jet substructure selection cuts when applied on the groomed jet. We illustrate this fact by recasting a CMS search for low-mass dijet resonances and show a few representative examples. The mass distributions exhibit narrow and wide bumps at several locations in the 100-300 GeV range, between the masses of the daughter particles A and the parent particle S, depending on the jet substructure selection. This striking observation introduces several caveats when interpreting and comparing experimental results, for the case of non-standard signatures. The possibility that a single boosted particle decaying hadronically produces multiple bumps, at quite different jet masses, and depending on the event selection, brings the anomaly chasing game to the next level. (orig.)

On the persistence of unstable bump-on-tail electron velocity distributions in the earth's foreshock

Science.gov (United States)

Klimas, Alexander J.; Fitzenreiter, Richard J.

1988-01-01

This paper presents further evidence for the persistence of bump-on-tail unstable reduced velocity distributions in the earth's electron foreshock, which contradicts the understanding of quasi-linear saturation of the bump-on-tail instability. A modified theory for the saturation of the bump-on-tail instability in the earth's foreshock is proposed to explain the mechanism of this persistence, and the predictions are compared to the results of a numerical simulation of the electron plasma in the foreshock. The results support the thesis that quasi-linear saturation of the bump-on-tail instability is modified in the foreshock, due to the driven nature of the region, so that at saturation the stabilized velocity distribution still appears bump-on-tail unstable to linear plasma analysis.

Effect of wettability and topological features of Namib beetle inspired bumps on dropwise condensation

Science.gov (United States)

Ahmad, Shakeel; Tang, Hui; Yao, Haimin

2017-11-01

The Stenocara beetle lives in arid desert environment where the only available source of water is fog droplets. The beetle contains many hydrophobic/hydrophilic bumps on its back. Water collection occurs on the hydrophilic patches. Once the droplet reaches the critical volume, it sheds down due to gravity. Although a number of studies on condensation and water collection on beetle inspired structures have been reported in literature, most of them were on micro/nano scale textures. However, in nature the beetle bumps are in millimeter scale. At this scale the role of topological features and gravity becomes crucial for early droplet shedding. Therefore, in this work we numerically investigated the effects of bump shape, wettability contrast, surface slope and hydrophilic patch to total area ratio on droplet shedding volume and time. A three-dimensional lattice Boltzmann method (LBM) based numerical framework was used for the simulations. Compared with bumps of other shapes such a cube or a circular cylinder, faster droplet shedding was obtained over a hemispherical bump. Furthermore, it was found that larger hydrophilic patch to total area ratio for the hemispherical bump significantly increased the droplet shedding time.

Investigation of Sn-Pb solder bumps of prototype photo detectors for the LHCb experiment

CERN Document Server

Delsante, M L; Arnau-Izquierdo, G

2004-01-01

The Large Hadron Collider (LHC) is now under construction at the European Organization for Nuclear Research (CERN). LHCb is one of the dedicated LHC experiments, allowing high energy proton-proton collisions to be exploited. This paper presents the results of the metallurgic studies carried out on Sn-Pb solder bumps of prototype vacuum photo detectors under development for LHCb, and in particular for the ring imaging Cherenkov-hybrid photo diode (RICH-HPD) project. These detectors encapsulate, in a vacuum tube, an assembly made of two silicon chips bonded together by a matrix of solder bumps. Each bump lies on a suitable system of under-bump metallic layers ensuring mechanical and electrical transition between the chip pad and the solder alloy. During manufacturing of the detector, bump-bonded (BB) assemblies are exposed to severe heat cycles up to 400 degree C inducing, in the present fabrication process, a clear degradation of electrical connectivity. Several investigations such as microstructural observati...

Peculiarities of the interaction of indium-tin and indium-bismuth alloys with ammonium halides

International Nuclear Information System (INIS)

Red'kin, A.N.; Smirnov, V.A.; Sokolova, E.A.; Makovej, Z.I.; Telegin, G.F.

1990-01-01

Peculiarities of fusible metal alloys interaction with ammonium halogenides in vertical reactor are considered using indium-tin and indium-bismuth binary alloys. It is shown that at the end of the process the composition of metal and salt phases is determined by the equilibrium type and constant characteristic of the given salt-metal system. As a result the interaction of indium-tin and indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium which may be used in the processes of separation or purification. A model is suggested to calculate the final concentration of salt and metal phase components

The peaks of life: The differential temporal locations of the reminiscence bump across disparate cueing methods

DEFF Research Database (Denmark)

Koppel, Jonathan Mark; Berntsen, Dorthe

2015-01-01

The reminiscence bump has generally been assessed through either (1) the cue word method, or (2) several related methods which we refer to under the umbrella of the important memories method. Here we provide a review of the literature demonstrating that the temporal location of the bump varies...... systematically according to cueing method, with the mean range of the bump located from 8.7 to 22.5 years of age for word-cued memories, versus 15.1 to 27.9 for important memories. This finding has hitherto been under-acknowledged, as existing theoretical accounts of the bump generally hold its location...... to be stable across cueing methods. We therefore re-evaluate existing theoretical accounts of the bump in light of these varying locations, addressing each account’s consistency with (1) the respective bumps found through each method taken individually, and (2) the sensitivity of the bump’s location to cueing...

New Pulsed Orbit Bump Magnets for the Fermilab Booster Synchrotron

CERN Document Server

Lackey, James; John, Carson; Kashikhin, Vladimir; Makarov, Alexander; Prebys, Eric

2005-01-01

The beam from the Fermilab Linac is injected onto a bump in the closed orbit of the Booster Synchrotron where a carbon foil strips the electrons from the Linac’s negative ion hydrogen beam. Although the Booster itself runs at 15Hz, heat dissipation in the orbit bump magnets has been one limitation to the fraction of the cycles that can be used for beam. New, 0.28T pulsed window frame dipole magnets have been constructed that will fit into the same space as the old ones, run at the full repetition rate of the Booster, and provide a larger bump to allow a cleaner injection orbit. The new magnets use a high saturation flux density Ni-Zn ferrite in the yoke rather than laminated steel. The presented magnetic design includes two and three dimensional magnetic field calculations with eddy currents and ferrite nonlinear effects.

Effectiveness of Emittance Bumps in the NLC and US Cold LC Main Linear Accelerators (LCC-0138)

International Nuclear Information System (INIS)

Tenenbaum, P

2004-01-01

We report on a series of studies on the effectiveness of closed orbit bumps in the linacs of the NLC and the USColdLC. In the first study, emittance dilutions of a pure-wakefield or pure-dispersion character are introduced in each linac, and a set of emittance bumps is tested to determine the most effective bump location in the linac, and the net effectiveness. In the second study, a more realistic set of dilutions are introduced and the wakefield bumps used in the first study are applied

Bump formation in a binary attractor neural network

International Nuclear Information System (INIS)

Koroutchev, Kostadin; Korutcheva, Elka

2006-01-01

The conditions for the formation of local bumps in the activity of binary attractor neural networks with spatially dependent connectivity are investigated. We show that these formations are observed when asymmetry between the activity during the retrieval and learning is imposed. An analytical approximation for the order parameters is derived. The corresponding phase diagram shows a relatively large and stable region where this effect is observed, although critical storage and information capacities drastically decrease inside that region. We demonstrate that the stability of the network, when starting from the bump formation, is larger than the stability when starting even from the whole pattern. Finally, we show a very good agreement between the analytical results and the simulations performed for different topologies of the network

Cascading reminiscence bumps in popular music.

Science.gov (United States)

Krumhansl, Carol Lynne; Zupnick, Justin Adam

2013-10-01

Autobiographical memories are disproportionately recalled for events in late adolescence and early adulthood, a phenomenon called the reminiscence bump. Previous studies on music have found autobiographical memories and life-long preferences for music from this period. In the present study, we probed young adults' personal memories associated with top hits over 5-and-a-half decades, as well as the context of their memories and their recognition of, preference for, quality judgments of, and emotional reactions to that music. All these measures showed the typical increase for music released during the two decades of their lives. Unexpectedly, we found that the same measures peaked for the music of participants' parents' generation. This finding points to the impact of music in childhood and suggests that these results reflect the prevalence of music in the home environment. An earlier peak occurred for 1960s music, which may be explained by its quality or by its transmission through two generations. We refer to this pattern of musical cultural transmission over generations as cascading reminiscence bumps.

Extraction of indium from extremely diluted solutions; Gewinnung von Indium aus extrem verduennten Loesungen

Energy Technology Data Exchange (ETDEWEB)

Vostal, Radek; Singliar, Ute; Froehlich, Peter [TU Bergakademie Freiberg (Germany). Inst. fuer Technische Chemie

2017-02-15

The demand for indium is rising with the growth of the electronics industry, where it is mainly used. Therefore, a multistage extraction process was developed to separate indium from a model solution whose composition was adequate to sphalerite ore. The initially very low concentration of indium in the solution was significantly increased by several successive extraction and reextraction steps. The process described is characterized by a low requirement for chemicals and a high purity of the obtained indium oxide.

Reminiscence bump in memory for public events

NARCIS (Netherlands)

Janssen, S.M.J.; Murre, J.M.J.; Meeter, M.

2008-01-01

People tend to recall more personal events from adolescence and early adulthood than from other lifetime periods. Most evidence suggests that differential encoding causes this reminiscence bump. However, the question why personal events are encoded better in those periods is still unanswered. To

CO2 laser-induced bump formation and growth on polystyrene for multi-depth soft lithography molds

International Nuclear Information System (INIS)

Li, Huawei; Fan, Yiqiang; Conchouso, David; Foulds, Ian G

2012-01-01

This paper reports the process of creating bumps on the surface of polystyrene (PS) induced by a CO 2 laser at low powers. The paper also outlines the procedure for growing bumps induced by multiple laser scans on the aforementioned bumps. These bumps result from the net volume gain of the laser heat-affected zone on the PS rather than from a deposition process, and the expansion of the heat-affected zone on PS was verified by measuring the hardness change using nanoindentation. The bumps have a much smoother surface than microchannels fabricated with laser cutting; depending on the laser power, they have heights ranging from hundreds of nanometers to 42 µm. The laser scanning speed and scan times along with this technique offer a fast and low-cost alternative for fabricating molds for multi-depth PDMS microfluidic devices. (paper)

CO2laser-induced bump formation and growth on polystyrene for multi-depth soft lithography molds

KAUST Repository

Li, Huawei

2012-10-19

This paper reports the process of creating bumps on the surface of polystyrene (PS) induced by a CO2laser at low powers. The paper also outlines the procedure for growing bumps induced by multiple laser scans on the aforementioned bumps. These bumps result from the net volume gain of the laser heat-affected zone on the PS rather than from a deposition process, and the expansion of the heat-affected zone on PS was verified by measuring the hardness change using nanoindentation. The bumps have a much smoother surface than microchannels fabricated with laser cutting; depending on the laser power, they have heights ranging from hundreds of nanometers to 42m. The laser scanning speed and scan times along with this technique offer a fast and low-cost alternative for fabricating molds for multi-depth PDMS microfluidic devices. © 2012 IOP Publishing Ltd.

Vacancy-indium clusters in implanted germanium

KAUST Repository

Chroneos, Alexander I.

2010-04-01

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

Vacancy-indium clusters in implanted germanium

KAUST Repository

Chroneos, Alexander I.; Kube, R.; Bracht, Hartmut A.; Grimes, Robin W.; Schwingenschlö gl, Udo

2010-01-01

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

Science.gov (United States)

2011-03-01

spectrum, photoluminescence (PL), and refractive index measurements. Other methods such as infrared imagery and micro probe wavelength dispersing ...States. AFIT/DS/ENP/11-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF MELT- GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ...CHARACTERIZATION OF MELT-GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ALLOYS Jean Wei, BS, MS Approved

Condensation on Slippery Asymmetric Bumps

Science.gov (United States)

Park, Kyoo-Chul; Kim, Philseok; Aizenberg, Joanna

2016-11-01

Controlling dropwise condensation by designing surfaces that enable droplets to grow rapidly and be shed as quickly as possible is fundamental to water harvesting systems, thermal power generation, distillation towers, etc. However, cutting-edge approaches based on micro/nanoscale textures suffer from intrinsic trade-offs that make it difficult to optimize both growth and transport at once. Here we present a conceptually different design approach based on principles derived from Namib desert beetles, cacti, and pitcher plants that synergistically couples both aspects of condensation and outperforms other synthetic surfaces. Inspired by an unconventional interpretation of the role of the beetle's bump geometry in promoting condensation, we show how to maximize vapor diffusion flux at the apex of convex millimetric bumps by optimizing curvature and shape. Integrating this apex geometry with a widening slope analogous to cactus spines couples rapid drop growth with fast directional transport, by creating a free energy profile that drives the drop down the slope. This coupling is further enhanced by a slippery, pitcher plant-inspired coating that facilitates feedback between coalescence-driven growth and capillary-driven motion. We further observe an unprecedented six-fold higher exponent in growth rate and much faster shedding time compared to other surfaces. We envision that our fundamental understanding and rational design strategy can be applied to a wide range of phase change applications.

Effects of PCB Pad Metal Finishes on the Cu-Pillar/Sn-Ag Micro Bump Joint Reliability of Chip-on-Board (COB) Assembly

Science.gov (United States)

Kim, Youngsoon; Lee, Seyong; Shin, Ji-won; Paik, Kyung-Wook

2016-06-01

While solder bumps have been used as the bump structure to form the interconnection during the last few decades, the continuing scaling down of devices has led to a change in the bump structure to Cu-pillar/Sn-Ag micro-bumps. Cu-pillar/Sn-Ag micro-bump interconnections differ from conventional solder bump interconnections in terms of their assembly processing and reliability. A thermo-compression bonding method with pre-applied b-stage non-conductive films has been adopted to form solder joints between Cu pillar/Sn-Ag micro bumps and printed circuit board vehicles, using various pad metal finishes. As a result, various interfacial inter-metallic compounds (IMCs) reactions and stress concentrations occur at the Cu pillar/Sn-Ag micro bumps joints. Therefore, it is necessary to investigate the influence of pad metal finishes on the structural reliability of fine pitch Cu pillar/Sn-Ag micro bumps flip chip packaging. In this study, four different pad surface finishes (Thin Ni ENEPIG, OSP, ENEPIG, ENIG) were evaluated in terms of their interconnection reliability by thermal cycle (T/C) test up to 2000 cycles at temperatures ranging from -55°C to 125°C and high-temperature storage test up to 1000 h at 150°C. The contact resistances of the Cu pillar/Sn-Ag micro bump showed significant differences after the T/C reliability test in the following order: thin Ni ENEPIG > OSP > ENEPIG where the thin Ni ENEPIG pad metal finish provided the best Cu pillar/Sn-Ag micro bump interconnection in terms of bump joint reliability. Various IMCs formed between the bump joint areas can account for the main failure mechanism.

Hanford Waste Tank Bump Accident and Consequence Analysis

International Nuclear Information System (INIS)

BRATZEL, D.R.

2000-01-01

This report provides a new evaluation of the Hanford tank bump accident analysis and consequences for incorporation into the Authorization Basis. The analysis scope is for the safe storage of waste in its current configuration in single-shell and double-shell tanks

The 1600 Å Emission Bump in Protoplanetary Disks: A Spectral Signature of H2O Dissociation

Science.gov (United States)

France, Kevin; Roueff, Evelyne; Abgrall, Hervé

2017-08-01

The FUV continuum spectrum of many accreting pre-main sequence stars, Classical T Tauri Stars (CTTSs), does not continue smoothly from the well-studied Balmer continuum emission in the NUV, suggesting that additional processes contribute to the short-wavelength emission in these objects. The most notable spectral feature in the FUV continuum of some CTTSs is a broad emission approximately centered at 1600 Å, which has been referred to as the “1600 Å Bump.” The origin of this feature remains unclear. In an effort to better understand the molecular properties of planet-forming disks and the UV spectral properties of accreting protostars, we have assembled archival FUV spectra of 37 disk-hosting systems observed by the Hubble Space Telescope-Cosmic Origins Spectrograph. Clear 1600 Å Bump emission is observed above the smooth, underlying 1100-1800 Å continuum spectrum in 19/37 Classical T Tauri disks in the HST-COS sample, with the detection rate in transition disks (8/8) being much higher than that in primordial or non-transition sources (11/29). We describe a spectral deconvolution analysis to separate the Bump (spanning 1490-1690 Å) from the underlying FUV continuum, finding an average Bump luminosity L(Bump) ≈ 7 × 1029 erg s-1. Parameterizing the Bump with a combination of Gaussian and polynomial components, we find that the 1600 Å Bump is characterized by a peak wavelength λ o = 1598.6 ± 3.3 Å, with FWHM = 35.8 ± 19.1 Å. Contrary to previous studies, we find that this feature is inconsistent with models of H2 excited by electron -impact. We show that this Bump makes up between 5%-50% of the total FUV continuum emission in the 1490-1690 Å band and emits roughly 10%-80% of the total fluorescent H2 luminosity for stars with well-defined Bump features. Energetically, this suggests that the carrier of the 1600 Å Bump emission is powered by Lyα photons. We argue that the most likely mechanism is Lyα-driven dissociation of H2O in the inner disk, r �

Indium Tin Oxide-Free Polymer Solar Cells: Toward Commercial Reality

DEFF Research Database (Denmark)

Angmo, Dechan; Espinosa Martinez, Nieves; Krebs, Frederik C

2014-01-01

Polymer solar cell (PSC) is the latest of all photovoltaic technologies which currently lies at the brink of commercialization. The impetus for its rapid progress in the last decade has come from low-cost high throughput production possibility which in turn relies on the use of low-cost materials...... and vacuum-free manufacture. Indium tin oxide (ITO), the commonly used transparent conductor, imposes the majority of the cost of production of PSCs, limits flexibility, and is feared to create bottleneck in the dawning industry due to indium scarcity and the resulting large price fluctuations. As such...

Life story chapters, specific memories and the reminiscence bump

DEFF Research Database (Denmark)

Thomsen, Dorthe Kirkegaard; Pillemer, David B.; Ivcevic, Zorana

2011-01-01

Theories of autobiographical memory posit that extended time periods (here termed chapters) and memories are organised hierarchically. If chapters organise memories and guide their recall, then chapters and memories should show similar temporal distributions over the life course. Previous research...... are over-represented at the beginning of chapters. Potential connections between chapters and the cultural life script are also examined. Adult participants first divided their life story into chapters and identified their most positive and most negative chapter. They then recalled a specific memory from...... demonstrates that positive but not negative memories show a reminiscence bump and that memories cluster at the beginning of extended time periods. The current study tested the hypotheses that (1) ages marking the beginning of positive but not negative chapters produce a bump, and that (2) specific memories...

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

International Nuclear Information System (INIS)

Chen Peng; An Zhenghua; Zhu Ming; Fu, Ricky K.Y.; Chu, Paul K.; Montgomery, Neil; Biswas, Sukanta

2004-01-01

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10 14 cm -2 ) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure

The AGB bump: a calibrator for core mixing

Directory of Open Access Journals (Sweden)

Bossini Diego

2015-01-01

Full Text Available The efficiency of convection in stars affects many aspects of their evolution and remains one of the key-open questions in stellar modelling. In particular, the size of the mixed core in core-He-burning low-mass stars is still uncertain and impacts the lifetime of this evolutionary phase and, e.g., the C/O profile in white dwarfs. One of the known observables related to the Horizontal Branch (HB and Asymptotic Giant Branch (AGB evolution is the AGB bump. Its luminosity depends on the position in mass of the helium-burning shell at its first ignition, that is affected by the extension of the central mixed region. In this preliminary work we show how various assumptions on near-core mixing and on the thermal stratification in the overshooting region affect the luminosity of the AGB bump, as well as the period spacing of gravity modes in core-He-burning models.

A novel method for direct solder bump pull testing using lead-free solders

Science.gov (United States)

Turner, Gregory Alan

This thesis focuses on the design, fabrication, and evaluation of a new method for testing the adhesion strength of lead-free solders, named the Isotraction Bump Pull method (IBP). In order to develop a direct solder joint-strength testing method that did not require customization for different solder types, bump sizes, specific equipment, or trial-and-error, a combination of two widely used and accepted standards was created. First, solder bumps were made from three types of lead free solder were generated on untreated copper PCB substrates using an in-house fabricated solder bump-on-demand generator, Following this, the newly developed method made use of a polymer epoxy to encapsulate the solder bumps that could then be tested under tension using a high precision universal vertical load machine. The tests produced repeatable and predictable results for each of the three alloys tested that were in agreement with the relative behavior of the same alloys using other testing methods in the literature. The median peak stress at failure for the three solders tested were 2020.52 psi, 940.57 psi, and 2781.0 psi, and were within one standard deviation of the of all data collected for each solder. The assumptions in this work that brittle fracture occurred through the Intermetallic Compound layer (IMC) were validated with the use of Energy-Dispersive X-Ray Spectrometry and high magnification of the fractured surface of both newly exposed sides of the test specimens. Following this, an examination of the process to apply the results from the tensile tests into standard material science equations for the fracture of the systems was performed..

Light forces on an indium atomic beam

International Nuclear Information System (INIS)

Kloeter, B.

2007-01-01

In this thesis it was studied, whether indium is a possible candidate for the nanostructuration respectively atomic lithography. For this known method for the generation and stabilization of the light necessary for the laser cooling had to be fitted to the special properties of indium. The spectroscopy of indium with the 451 nm and the 410 nm light yielded first hints that the formulae for the atom-light interaction for a two-level atom cannot be directly transferred to the indium atom. By means of the obtained parameters of the present experiment predictions for a possible Doppler cooling of the indium atomic beam were calculated. Furthermore the possibility for the direct deposition of indium on a substrate was studied

Thermal cycling reliability of Cu/SnAg double-bump flip chip assemblies for 100 μm pitch applications

Science.gov (United States)

Son, Ho-Young; Kim, Ilho; Lee, Soon-Bok; Jung, Gi-Jo; Park, Byung-Jin; Paik, Kyung-Wook

2009-01-01

A thick Cu column based double-bump flip chip structure is one of the promising alternatives for fine pitch flip chip applications. In this study, the thermal cycling (T/C) reliability of Cu/SnAg double-bump flip chip assemblies was investigated, and the failure mechanism was analyzed through the correlation of T/C test and the finite element analysis (FEA) results. After 1000 thermal cycles, T/C failures occurred at some Cu/SnAg bumps located at the edge and corner of chips. Scanning acoustic microscope analysis and scanning electron microscope observations indicated that the failure site was the Cu column/Si chip interface. It was identified by a FEA where the maximum stress concentration was located during T/C. During T/C, the Al pad between the Si chip and a Cu column bump was displaced due to thermomechanical stress. Based on the low cycle fatigue model, the accumulation of equivalent plastic strain resulted in thermal fatigue deformation of the Cu column bumps and ultimately reduced the thermal cycling lifetime. The maximum equivalent plastic strains of some bumps at the chip edge increased with an increased number of thermal cycles. However, equivalent plastic strains of the inner bumps did not increase regardless of the number of thermal cycles. In addition, the z-directional normal plastic strain ɛ22 was determined to be compressive and was a dominant component causing the plastic deformation of Cu/SnAg double bumps. As the number of thermal cycles increased, normal plastic strains in the perpendicular direction to the Si chip and shear strains were accumulated on the Cu column bumps at the chip edge at low temperature region. Thus it was found that the Al pad at the Si chip/Cu column interface underwent thermal fatigue deformation by compressive normal strain and the contact loss by displacement failure of the Al pad, the main T/C failure mode of the Cu/SnAg flip chip assembly, then occurred at the Si chip/Cu column interface shear strain deformation

Aqueous-based thick photoresist removal for bumping applications

Science.gov (United States)

Moore, John C.; Brewer, Alex J.; Law, Alman; Pettit, Jared M.

2015-03-01

Cleaning processes account for over 25% of processing in microelectronic manufacturing [1], suggesting electronics to be one of the most chemical intensive markets in commerce. Industry roadmaps exist to reduce chemical exposure, usage, and waste [2]. Companies are encouraged to create a safer working environment, or green factory, and ultimately become certified similar to LEED in the building industry [3]. A significant step in this direction is the integration of aqueous-based photoresist (PR) strippers which eliminate regulatory risks and cut costs by over 50%. One of the largest organic solvent usages is based upon thick PR removal during bumping processes [4-6]. Using market projections and the benefits of recycling, it is estimated that over 1,000 metric tons (mt) of residuals originating from bumping processes are incinerated or sent to a landfill. Aqueous-based stripping would eliminate this disposal while also reducing the daily risks to workers and added permitting costs. Positive-tone PR dissolves in aqueous strippers while negative-tone systems are lifted-off from the substrate, bumps, pillars, and redistribution layers (RDL). While the wafers are further processed and rinsed, the lifted-off PR is pumped from the tank, collected onto a filter, and periodically back-flushed to the trash. The PR solids become a non-hazardous plastic waste while the liquids are mixed with the developer stream, neutralized, filtered, and in most cases, disposed to the sewer. Regardless of PR thickness, removal processes may be tuned to perform in <15min, performing at rates nearly 10X faster than solvents with higher bath lives. A balanced formula is safe for metals, dielectrics, and may be customized to any fab.

Do You Hear a Bump or a Hole?

DEFF Research Database (Denmark)

Serafin, Stefania; Turchet, Luca; Nordahl, Rolf

2010-01-01

In this paper, we present a preliminary experiment whose goal is to assess the role of temporal aspects in sonically simulating the act of walking on a bump or a hole. In particular, we investigate whether the timing between heel and toe and the timing between footsteps affects the perception...

Dropwise condensation on hydrophobic bumps and dimples

Science.gov (United States)

Yao, Yuehan; Aizenberg, Joanna; Park, Kyoo-Chul

2018-04-01

Surface topography plays an important role in promoting or suppressing localized condensation. In this work, we study the growth of water droplets on hydrophobic convex surface textures such as bumps and concave surface textures such as dimples with a millimeter scale radius of curvature. We analyze the spatio-temporal droplet size distribution under a supersaturation condition created by keeping the uniform surface temperature below the dew point and show its relationship with the sign and magnitude of the surface curvature. In particular, in contrast to the well-known capillary condensation effect, we report an unexpectedly less favorable condensation on smaller, millimeter-scale dimples where the capillary condensation effect is negligible. To explain these experimental results, we numerically calculated the diffusion flux of water vapor around the surface textures, showing that its magnitude is higher on bumps and lower on dimples compared to a flat surface. We envision that our understanding of millimetric surface topography can be applied to improve the energy efficiency of condensation in applications such as water harvesting, heating, ventilation, and air conditioning systems for buildings and transportation, heat exchangers, thermal desalination plants, and fuel processing systems.

The 1600 Å Emission Bump in Protoplanetary Disks: A Spectral Signature of H{sub 2}O Dissociation

Energy Technology Data Exchange (ETDEWEB)

France, Kevin [Laboratory for Atmospheric and Space Physics, University of Colorado, 600 UCB, Boulder, CO 80309 (United States); Roueff, Evelyne; Abgrall, Hervé, E-mail: kevin.france@colorado.edu [LERMA, Observatoire de Paris, PSL Research University, CNRS, Sorbonne Universités, UPMC Univ. Paris 06, F-92190, Meudon (France)

2017-08-01

The FUV continuum spectrum of many accreting pre-main sequence stars, Classical T Tauri Stars (CTTSs), does not continue smoothly from the well-studied Balmer continuum emission in the NUV, suggesting that additional processes contribute to the short-wavelength emission in these objects. The most notable spectral feature in the FUV continuum of some CTTSs is a broad emission approximately centered at 1600 Å, which has been referred to as the “1600 Å Bump.” The origin of this feature remains unclear. In an effort to better understand the molecular properties of planet-forming disks and the UV spectral properties of accreting protostars, we have assembled archival FUV spectra of 37 disk-hosting systems observed by the Hubble Space Telescope -Cosmic Origins Spectrograph. Clear 1600 Å Bump emission is observed above the smooth, underlying 1100–1800 Å continuum spectrum in 19/37 Classical T Tauri disks in the HST -COS sample, with the detection rate in transition disks (8/8) being much higher than that in primordial or non-transition sources (11/29). We describe a spectral deconvolution analysis to separate the Bump (spanning 1490–1690 Å) from the underlying FUV continuum, finding an average Bump luminosity L (Bump) ≈ 7 × 10{sup 29} erg s{sup −1}. Parameterizing the Bump with a combination of Gaussian and polynomial components, we find that the 1600 Å Bump is characterized by a peak wavelength λ {sub o} = 1598.6 ± 3.3 Å, with FWHM = 35.8 ± 19.1 Å. Contrary to previous studies, we find that this feature is inconsistent with models of H{sub 2} excited by electron -impact. We show that this Bump makes up between 5%–50% of the total FUV continuum emission in the 1490–1690 Å band and emits roughly 10%–80% of the total fluorescent H{sub 2} luminosity for stars with well-defined Bump features. Energetically, this suggests that the carrier of the 1600 Å Bump emission is powered by Ly α photons. We argue that the most likely mechanism

New indium selenite-oxalate and indium oxalate with two- and three-dimensional structures

International Nuclear Information System (INIS)

Cao Junjun; Li Guodong; Chen Jiesheng

2009-01-01

Two new indium(III) compounds with extended structures, [In 2 (SeO 3 ) 2 (C 2 O 4 )(H 2 O) 2 ].2H 2 O (I) and [NH 3 (CH 2 ) 2 NH 3 ][In(C 2 O 4 ) 2 ] 2 .5H 2 O (II), have been prepared under mild hydrothermal conditions and structurally characterized by single-crystal X-ray diffraction, thermogravimetric analysis and infrared spectroscopy. Compound I crystallizes in the triclinic system, space group P-1, with a=5.2596(11) A, b=6.8649(14) A, c=9.3289(19) A, α=101.78(3) o , β=102.03(3) o , γ=104.52(3) o , while compound II crystallizes in the orthorhombic system, space group Fdd2, with a=15.856(3) A, b=31.183(6) A, c=8.6688(17) A. In compound I, indium-selenite chains are bridged by oxalate units to form two-dimensional (2D) In 2 (SeO 3 ) 2 C 2 O 4 layers, separated by non-coordinating water molecules. In compound II, the indium atoms are connected through the oxalate units to generate a 3D open framework containing cross-linked 12- and 8-membered channels. - Graphical abstract: Two new indium(III) compounds have been hydrothermally synthesized and structurally characterized. In I, the indium-selenite chains are bridged by oxalate units to form 2D In 2 (SeO 3 ) 2 C 2 O 4 layers. In II, the indium atoms are connected through the oxalate units to generate a 3D open framework containing cross-linked 12- and 8-membered ring channels

The precipitation of indium at elevated pH in a stream influenced by acid mine drainage

Science.gov (United States)

White, Sarah Jane O.; Hussain, Fatima A.; Hemond, Harold F.; Sacco, Sarah A.; Shine, James P.; Runkel, Robert L.; Walton-Day, Katherine; Kimball, Briant A.

2017-01-01

Indium is an increasingly important metal in semiconductors and electronics and has uses in important energy technologies such as photovoltaic cells and light-emitting diodes (LEDs). One significant flux of indium to the environment is from lead, zinc, copper, and tin mining and smelting, but little is known about its aqueous behavior after it is mobilized. In this study, we use Mineral Creek, a headwater stream in southwestern Colorado severely affected by heavy metal contamination as a result of acid mine drainage, as a natural laboratory to study the aqueous behavior of indium. At the existing pH of ~ 3, indium concentrations are 6–29 μg/L (10,000 × those found in natural rivers), and are completely filterable through a 0.45 μm filter. During a pH modification experiment, the pH of the system was raised to > 8, and > 99% of the indium became associated with the suspended solid phase (i.e. does not pass through a 0.45 μm filter). To determine the mechanism of removal of indium from the filterable and likely primarily dissolved phase, we conducted laboratory experiments to determine an upper bound for a sorption constant to iron oxides, and used this, along with other published thermodynamic constants, to model the partitioning of indium in Mineral Creek. Modeling results suggest that the removal of indium from the filterable phase is consistent with precipitation of indium hydroxide from a dissolved phase. This work demonstrates that nonferrous mining processes can be a significant source of indium to the environment, and provides critical information about the aqueous behavior of indium.

Speed Bump Detection Using Accelerometric Features: A Genetic Algorithm Approach.

Science.gov (United States)

Celaya-Padilla, Jose M; Galván-Tejada, Carlos E; López-Monteagudo, F E; Alonso-González, O; Moreno-Báez, Arturo; Martínez-Torteya, Antonio; Galván-Tejada, Jorge I; Arceo-Olague, Jose G; Luna-García, Huizilopoztli; Gamboa-Rosales, Hamurabi

2018-02-03

Among the current challenges of the Smart City, traffic management and maintenance are of utmost importance. Road surface monitoring is currently performed by humans, but the road surface condition is one of the main indicators of road quality, and it may drastically affect fuel consumption and the safety of both drivers and pedestrians. Abnormalities in the road, such as manholes and potholes, can cause accidents when not identified by the drivers. Furthermore, human-induced abnormalities, such as speed bumps, could also cause accidents. In addition, while said obstacles ought to be signalized according to specific road regulation, they are not always correctly labeled. Therefore, we developed a novel method for the detection of road abnormalities (i.e., speed bumps). This method makes use of a gyro, an accelerometer, and a GPS sensor mounted in a car. After having the vehicle cruise through several streets, data is retrieved from the sensors. Then, using a cross-validation strategy, a genetic algorithm is used to find a logistic model that accurately detects road abnormalities. The proposed model had an accuracy of 0.9714 in a blind evaluation, with a false positive rate smaller than 0.018, and an area under the receiver operating characteristic curve of 0.9784. This methodology has the potential to detect speed bumps in quasi real-time conditions, and can be used to construct a real-time surface monitoring system.

The first bump-bonded pixel detectors on CVD diamond

International Nuclear Information System (INIS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V.G.; Pan, L.S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G.

1999-01-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch

The first bump-bonded pixel detectors on CVD diamond

CERN Document Server

Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Fried, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Palmieri, V G; Pan, L S; Peitz, A; Pernicka, Manfred; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Steuerer, J; Stone, R; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Turchetta, R; Vittone, E; Wagner, A; Walsh, A M; Wedenig, R; Weilhammer, Peter; Zeuner, W; Ziock, H J; Zöller, M; Charles, E; Ciocio, A; Dao, K; Einsweiler, Kevin F; Fasching, D; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Milgrome, O; Palaio, N; Richardson, J; Sinervo, P K; Zizka, G

1999-01-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98565544f the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 mu m was observed, consistent with expectations given the detector pitch. (13 refs).

The first bump-bonded pixel detectors on CVD diamond

Energy Technology Data Exchange (ETDEWEB)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V.G.; Pan, L.S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W. E-mail: william@physics.utoronto.ca; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G

1999-11-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 {mu}m was observed, consistent with expectations given the detector pitch.

Indium recovery by solvent extraction

International Nuclear Information System (INIS)

Fortes, Marilia Camargos Botelho

1999-04-01

Indium has been recovered as a byproduct from residues generated from the sulfuric acid leaching circuits in mineral plants for zinc recovery. Once its recovery comes from the slags of other metals recovery, it is necessary to separate it from the other elements which usually are present in high concentrations. Many works have been approaching this separation and indicate the solvent extraction process as the main technique used. In Brazilian case, indium recovery depends on the knowledge of this technique and its development. This paper describes the solvent extraction knowledge for the indium recovery from aqueous solutions generated in mineral plants. The results for determination of the best experimental conditions to obtain a high indium concentration solution and minimum iron poisoning by solvent extraction with di (2-ethylhexyl)-phosphoric acid (D2EHPA) solubilized in isoparafin and exxsol has been presented. (author)

Preparation of trialkylindium by alkylation of metallic indium

International Nuclear Information System (INIS)

Eremeev, I.V.; Danov, S.M.; Sakhipov, V.R.

1995-01-01

The investigation results on production of trialkyl indium by alkylation of metallic indium are presented. In contradistinction to the known techniques for the production of trialkyls on indium by alkylation it is suggested to separate the synthesis into two steps. At the first step indium is alkylated by alkylhalide to alkyl indium halide, and at the second alkylation is carried out using. Grignard reagent. The techniques for preparation of trimethyl- and triethylindium, developed on the bases of this scheme, are noted for good reproducibility, allow to preclude, agglomeration of indium during the synthesis, as well as to reduce the consumption coefficients, and amounts, of the introduced starting reagents, i.e. magnesium and alkylhalide. Refs. 16

NSRL Extraction Bump Control in the Booster

International Nuclear Information System (INIS)

Brennan, L.

2008-01-01

Due to inadequacies in the user interface of the booster orbit control system, a number of new tools were developed. The first priority was an accurate calculation of the winding currents given specific displacements at each extraction septa. Next, the physical limits of the power supplies (±600 amps) needed to be taken into account. In light of this limit, a system is developed that indicates to the user what the allowed values of one bump parameter are once the other two have been specified. Finally, techniques are developed to account for the orbit behavior once power supplies are requested to exceed their ±600 amp limit. This includes a recalculation of bump parameters and a calculation of the amplitude of the residuals. Following this, possible areas for further development are outlined. These techniques were computationally developed in Mathematica and tested in the Methodical Accelerator Design (MAD) program before they were implemented into the control system. At the end, a description of the implementation of these techniques in a new interface is described. This includes a depiction of the appearance and functionality of the graphical user interface, a description of the input and output flow, and an outline of how each important calculation is performed

Revised masses for the double-mode and bump Cepheids

International Nuclear Information System (INIS)

Cox, A.N.; Deupree, R.G.; King, D.S.; Hodson, S.W.

1977-01-01

We consider Population I Cepheids with two pulsation modes and those with a bump in the light and velocity curves. Model envelopes for these Cepheids have been altered in several ways in an attempt in remove the discrepancy between masses predicted from the evolution theory mass-luminosity relation an th masses predicted from pulsation theory. One of these ways, the inclusion of rotation, does not change the period ratio of the first overtone mode to the fundamental mode enough to resolve this mass discrepancy. Another way, the inclusion of a helium- (or metal-) rich layer mixed by convection and pulsation between the stellar surface and 70,000 K decreases this period ratio appreciably. The ratio of the second overtone period to the fundamental period is also reduced with this structure. The masses of the double-mode Cepheids U TrA and V367 Sct and the bump Cepheids U Sgr and β Dor are found to be much closer to the masses derived from stellar evolution theory

Biomimetic Water-Collecting Fabric with Light-Induced Superhydrophilic Bumps.

Science.gov (United States)

Wang, Yuanfeng; Wang, Xiaowen; Lai, Chuilin; Hu, Huawen; Kong, Yeeyee; Fei, Bin; Xin, John H

2016-02-10

To develop an efficient water-collecting surface that integrates both fast water-capturing and easy drainage properties is of high current interest for addressing global water issues. In this work, a superhydrophobic surface was fabricated on cotton fabric via manipulation of both the surface roughness and surface energy. This was followed by a subsequent spray coating of TiO2 nanosol that created light-induced superhydrophilic bumps with a unique raised structure as a result of the interfacial tension of the TiO2 nanosol sprayed on the superhydrophobic fiber surface. These raised TiO2 bumps induce both a wettability gradient and a shape gradient, synergistically accelerating water coalescence and water collection. The in-depth study revealed that the quantity and the distribution of the TiO2 had a significant impact on the final water collection efficiency. This inexpensive and facilely fabricated fabric biomimicks the desert beetle's back and spider silk, which are capable of fog harvesting without additional energy consumption.

Speed Bump Detection Using Accelerometric Features: A Genetic Algorithm Approach

Directory of Open Access Journals (Sweden)

Jose M. Celaya-Padilla

2018-02-01

Full Text Available Among the current challenges of the Smart City, traffic management and maintenance are of utmost importance. Road surface monitoring is currently performed by humans, but the road surface condition is one of the main indicators of road quality, and it may drastically affect fuel consumption and the safety of both drivers and pedestrians. Abnormalities in the road, such as manholes and potholes, can cause accidents when not identified by the drivers. Furthermore, human-induced abnormalities, such as speed bumps, could also cause accidents. In addition, while said obstacles ought to be signalized according to specific road regulation, they are not always correctly labeled. Therefore, we developed a novel method for the detection of road abnormalities (i.e., speed bumps. This method makes use of a gyro, an accelerometer, and a GPS sensor mounted in a car. After having the vehicle cruise through several streets, data is retrieved from the sensors. Then, using a cross-validation strategy, a genetic algorithm is used to find a logistic model that accurately detects road abnormalities. The proposed model had an accuracy of 0.9714 in a blind evaluation, with a false positive rate smaller than 0.018, and an area under the receiver operating characteristic curve of 0.9784. This methodology has the potential to detect speed bumps in quasi real-time conditions, and can be used to construct a real-time surface monitoring system.

Aging treatment characteristics of solder bump joint for high reliability optical module

International Nuclear Information System (INIS)

Kim, Kyung-Seob; Yu, Chung-Hee; Yang, Jun-Mo

2004-01-01

The joint strength and fracture surfaces of Sn-37 mass% Pb and Au stud bumps for photo diode packages after isothermal aging testing were studied experimentally. Al/Au stud bumps and Cu/Sn-37 mass% Pb solders were adopted, and aged for up to 900 h to analyze the effect of intermetallic compound (IMC). The joint strength decreased with aging time. The diffraction patterns of Cu 6 Sn 5 , scallop-shaped IMCs, and planar-shaped Cu 3 Sn were characterized using transmission electron microscopy (TEM). The formation of Kirkendall voids and the growth of IMCs at the solder were found to be a possible mechanism for joint strength reduction

Nanomechanical Characterization of Indium Nano/Microwires

Directory of Open Access Journals (Sweden)

N Kiran MSR

2010-01-01

Full Text Available Abstract Nanomechanical properties of indium nanowires like structures fabricated on quartz substrate by trench template technique, measured using nanoindentation. The hardness and elastic modulus of wires were measured and compared with the values of indium thin film. Displacement burst observed while indenting the nanowire. ‘Wire-only hardness’ obtained using Korsunsky model from composite hardness. Nanowires have exhibited almost same modulus as indium thin film but considerable changes were observed in hardness value.

The reminiscence bump for public events: A review of its prevalence and taxonomy of alternative age distributions

DEFF Research Database (Denmark)

Koppel, Jonathan Mark

2013-01-01

a legitimate effect, and (ii) the alternative age distributions that are otherwise seen in recall for public events. I conclude that, though the bump is frequently found, the legitimacy of the effect is contingent upon the strictness of the standard one employs. I also find significant exceptions to the bump...

GIANT X-RAY BUMP IN GRB 121027A: EVIDENCE FOR FALL-BACK DISK ACCRETION

Energy Technology Data Exchange (ETDEWEB)

Wu Xuefeng [Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Hou Shujin [Department of Astronomy and Institute of Theoretical Physics and Astrophysics, Xiamen University, Xiamen, Fujian 361005 (China); Lei Weihua, E-mail: xfwu@pmo.ac.cn, E-mail: leiwh@hust.edu.cn [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2013-04-20

A particularly interesting discovery in observations of GRB 121027A is that of a giant X-ray bump detected by the Swift/X-Ray Telescope. The X-ray afterglow re-brightens sharply at {approx}10{sup 3} s after the trigger by more than two orders of magnitude in less than 200 s. This X-ray bump lasts for more than 10{sup 4} s. It is quite different from typical X-ray flares. In this Letter we propose a fall-back accretion model to interpret this X-ray bump within the context of the collapse of a massive star for a long-duration gamma-ray burst. The required fall-back radius of {approx}3.5 Multiplication-Sign 10{sup 10} cm and mass of {approx}0.9-2.6 M{sub Sun} imply that a significant part of the helium envelope should survive through the mass loss during the last stage of the massive progenitor of GRB 121027A.

TRACKING TESTS FOR THE SNS FAST INJECTION BUMP POWER SUPPLY

International Nuclear Information System (INIS)

ENG, W.; CUTLER, R.; DEWAN, S.

2004-01-01

The tracking requirement of the SNS Fast Injection Bump power supplies is described. In addition to the usual tracking between the load current and the input reference of a power supply, these power supplies must also track between pairs of units under slightly different loads. This paper describes the use of a current-null test to measure tracking performances. For the actual tests, a single dummy magnet load was used to measure the tracking between the first two production units at the manufacturer's facility. Using the Yokogawa WE7000 waveform. PC-based measurement instrument, input and output waveforms are digitized and stored in data files. A program written for this application is then used to extract data from these files to construct, analyze the waveforms and characterize the power supply performance. Results of the measurements of two SNS Fast Injection Bump power supplies will be presented in this paper

A study of the kinetics and mechanisms of electrocrystallization of indium oxide on an in situ prepared metallic indium electrode

International Nuclear Information System (INIS)

Omanovic, S.; Metikos-Hukovic, M.

2004-01-01

The mechanisms and kinetics of nucleation and growth of indium oxide film on an in situ prepared metallic indium electrode was studied in a borate buffer solution of pH 10.0 using cyclic voltammetry and chroanoamperometry techniques. It was shown that the initial stage of nucleation of the oxide film includes a three-dimensional progressive nucleation process, combined with a diffusion-controlled growth of the stable indium oxide crystals. The thermodynamic data obtained indicated a strong tendency of indium to form an indium oxide film on its surface in an aqueous solution. It was found that the rate-determining step in the nucleation and growth process is the surface diffusion of electroactive species. The nucleation rate constant, and the number of nucleation active sites were calculated independently. It was shown that between 2 and 15% of sites on the indium surface act as active nucleation centers, and that each active site represents a critical nucleus

Electronic and chemical properties of indium clusters

International Nuclear Information System (INIS)

Rayane, D.; Khardi, S.; Tribollet, B.; Broyer, M.; Melinon, P.; Cabaud, B.; Hoareau, A.

1989-01-01

Indium clusters are produced by the inert gas condensation technique. The ionization potentials are found higher for small clusters than for the Indium atom. This is explained by the p character of the bonding as in aluminium. Doubly charge clusters are also observed and fragmentation processes discussed. Finally small Indium clusters 3< n<9 are found very reactive with hydrocarbon. (orig.)

Reading in Middle School: Bumps in the Literacy Crossroads

Science.gov (United States)

Hall, Katrina Willard

2008-01-01

Certainly a major bump in the literacy road today is the apparent conflict between school literacies and the preferred literacy activities of students outside of school. After family conversation about a nephew who was getting poor grades in language arts, Hall shares her thinking on the dilemmas of what constitutes literacy, how literacies kids…

Decomposing the sales promotion bump accounting for cross-category effects

NARCIS (Netherlands)

Leeflang, Peter S. H.; Selva, Josefa Parreno; Wittink, Dick R.; Dijk, Albertus Alard van

Extant research on the decomposition of unit sales bumps due to price promotions considers these effects only within a single product category. This article introduces a framework that accommodates specific cross-category effects. Empirical results based on daily data measured at the item/SKU level

Selective separation of indium by iminodiacetic acid chelating resin

International Nuclear Information System (INIS)

Fortes, M.C.B.; Benedetto, J.S.; Martins, A.H.

2007-01-01

- Indium can be recovered by treating residues, flue dusts, slags, and metallic intermediates in zinc smelting. This paper investigates the adsorption characteristics of indium and iron on an iminodiacetic acid chelating resin, Amberlite R IRC748 (Rohm and Haas Co.-USA). High concentrations of iron are always present in the aqueous feed solution of indium recovery. In addition, the chemical behaviour of iron in adsorptive systems is similar to that of indium. The metal concentrations in the aqueous solution were based on typical indium sulfate leach liquor obtained from zinc hydrometallurgical processing in a Brazilian plant. The ionic adsorption experiments were carried out by the continuous column method. Amberlite R IRC748 resin had a high affinity for indium under acidic conditions. Indium ions adsorbed onto the polymeric resin were eluted with a 0.5 mol/dm 3 sulphuric acid solution passed through the resin bed in the column. 99.5% pure indium sulfate aqueous solution was obtained using the iminodiacetic acid chelating resin Amberlite R IRC748. (author)

InP (Indium Phosphide): Into the future

International Nuclear Information System (INIS)

Brandhorst, H.W. Jr.

1989-03-01

Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide

InP (Indium Phosphide): Into the future

Science.gov (United States)

Brandhorst, Henry W., Jr.

1989-01-01

Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

The BUMP model of response planning: intermittent predictive control accounts for 10 Hz physiological tremor.

Science.gov (United States)

Bye, Robin T; Neilson, Peter D

2010-10-01

Physiological tremor during movement is characterized by ∼10 Hz oscillation observed both in the electromyogram activity and in the velocity profile. We propose that this particular rhythm occurs as the direct consequence of a movement response planning system that acts as an intermittent predictive controller operating at discrete intervals of ∼100 ms. The BUMP model of response planning describes such a system. It forms the kernel of Adaptive Model Theory which defines, in computational terms, a basic unit of motor production or BUMP. Each BUMP consists of three processes: (1) analyzing sensory information, (2) planning a desired optimal response, and (3) execution of that response. These processes operate in parallel across successive sequential BUMPs. The response planning process requires a discrete-time interval in which to generate a minimum acceleration trajectory to connect the actual response with the predicted future state of the target and compensate for executional error. We have shown previously that a response planning time of 100 ms accounts for the intermittency observed experimentally in visual tracking studies and for the psychological refractory period observed in double stimulation reaction time studies. We have also shown that simulations of aimed movement, using this same planning interval, reproduce experimentally observed speed-accuracy tradeoffs and movement velocity profiles. Here we show, by means of a simulation study of constant velocity tracking movements, that employing a 100 ms planning interval closely reproduces the measurement discontinuities and power spectra of electromyograms, joint-angles, and angular velocities of physiological tremor reported experimentally. We conclude that intermittent predictive control through sequential operation of BUMPs is a fundamental mechanism of 10 Hz physiological tremor in movement. Copyright © 2010 Elsevier B.V. All rights reserved.

Use of and occupational exposure to indium in the United States.

Science.gov (United States)

Hines, Cynthia J; Roberts, Jennifer L; Andrews, Ronnee N; Jackson, Matthew V; Deddens, James A

2013-01-01

Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009-2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m(3) for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH

Trapping saturation of the bump-on-tail instability and electrostatic harmonic excitation in Earth's foreshock

International Nuclear Information System (INIS)

Klimas, A.J.

1990-01-01

Trapping saturation of the bump-on-tail instability is discussed using electron plasma Vlasov simulation results. The role of electrostatic harmonic excitation is considered in detail and shown to play a decisive role in the saturation of the instability. An extensive discussion of the simulation results is given to show that the results are not significantly limited by the finite number of Fourier modes used nor by the discrete distribution of those modes in wave number. It is argued that in the leading edge of Earth's electron foreshock a narrow wave number band of unstable field modes leads to trapping saturation of the bump-on-tail instability while simultaneously exciting electrostatic plasma waves at harmonics of the plasma frequency in simialr narrow bands of shorter wavelengths. The argument is based (1) on the observations of Lacombe et al. (1985), who found intense plasma waves at the leading edge of the foreshock with a spectral distribution sufficiently narrow to trap particles in resonance with the waves, and (2) on numerical simulations of the foreshock electron plasma which indicate that trapping saturation of the bump-on-tail instability leads to phase space vortex formation with consequent excitation of electrostatic harmonics. Thus it is suggested that observations of electrostatic harmonics in the leading edge of the foreshock would strongly implicate trapping as the saturation mechanism for the bump-on-tail instability in that region

Planetesimal formation by an axisymmetric radial bump of the column density of the gas in a protoplanetary disk

Science.gov (United States)

Onishi, Isamu K.; Sekiya, Minoru

2017-04-01

We investigate the effect of a radial pressure bump in a protoplanetary disk on planetesimal formation. We performed the two-dimensional numerical simulation of the dynamical interaction of solid particles and gas with an initially defined pressure bump under the assumption of axisymmetry. The aim of this work is to elucidate the effects of the stellar vertical gravity that were omitted in a previous study. Our results are very different from the previous study, which omitted the vertical gravity. Because dust particles settle toward the midplane because of the vertical gravity to form a thin dust layer, the regions outside of the dust layer are scarcely affected by the back-reaction of the dust. Hence, the gas column density keeps its initial profile with a bump, and dust particles migrate toward the bump. In addition, the turbulence due to the Kelvin-Helmholtz instability caused by the difference of the azimuthal velocities between the inside and outside of the dust layer is suppressed where the radial pressure gradient is reduced by the pressure bump. The dust settling proceeds further where the turbulence is weak, and a number of dust clumps are formed. The dust density in some clumps exceeds the Roche density. Planetesimals are considered to be formed from these clumps owing to the self-gravity.[Figure not available: see fulltext.

Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

Science.gov (United States)

Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

2017-02-01

High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

Science.gov (United States)

McRae, C. R. H.; Béjanin, J. H.; Earnest, C. T.; McConkey, T. G.; Rinehart, J. R.; Deimert, C.; Thomas, J. P.; Wasilewski, Z. R.; Mariantoni, M.

2018-05-01

Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing material losses are crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in a vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level state are the dominant loss mechanism at low photon number and temperature, with a loss tangent due to native indium oxide of ˜ 5 × 10 - 5 . The molecular beam epitaxial films show evidence of the formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.

Bumps, breathers, and waves in a neural network with spike frequency adaptation

International Nuclear Information System (INIS)

Coombes, S.; Owen, M.R.

2005-01-01

We introduce a continuum model of neural tissue that includes the effects of spike frequency adaptation (SFA). The basic model is an integral equation for synaptic activity that depends upon nonlocal network connectivity, synaptic response, and the firing rate of a single neuron. We consider a phenomenological model of SFA via a simple state-dependent threshold firing rate function. As without SFA, Mexican-hat connectivity allows for the existence of spatially localized states (bumps). Importantly recent Evans function techniques are used to show that bumps may destabilize leading to the emergence of breathers and traveling waves. Moreover, a similar analysis for traveling pulses leads to the conditions necessary to observe a stable traveling breather. Simulations confirm our theoretical predictions and illustrate the rich behavior of this model

How metallic is the binding state of indium hosted by excess-metal chalcogenides in ore deposits?

Science.gov (United States)

Ondina Figueiredo, Maria; Pena Silva, Teresa; Oliveira, Daniel; Rosa, Diogo

2010-05-01

Discovered in 1863, indium is nowadays a strategic scarce metal used both in classical technologic fields (like low melting-temperature alloys and solders) and in innovative nano-technologies to produce "high-tech devices" by means of new materials, namely liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and the recently introduced transparent flexible thin-films manufactured with ionic amorphous oxide semiconductors (IAOS). Indium is a typical chalcophile element, seldom forming specific minerals and occurring mainly dispersed within polymetallic sulphides, particularly with excess metal ions [1]. The average content of indium in the Earth's crust is very low but a further increase in its demand is still expected in the next years, thus focusing a special interest in uncovering new exploitation sites through promising polymetallic sulphide ores - e.g., the Iberian Pyrite Belt (IPB) [2] - and in improving recycling technologies. Indium recovery stands mostly on zinc extraction from sphalerite, the natural cubic sulphide which is the prototype of so-called "tetrahedral sulphides" where metal ions fill half of the available tetrahedral sites within the cubic closest packing of sulphur anions where the double of unfilled interstices are available for further in-filling. It is worth remarking that such packing array is particularly suitable for accommodating polymetallic cations by filling closely located interstitial sites [3] as happens in excess-metal tetrahedral sulphides - e.g. bornite, ideally Cu5FeS4, recognized as an In-carrying mineral [4]. Studying the tendency towards In-In interactions able of leading to the formation of polycations would efficiently contribute to understand indium crystal chemistry and the metal binding state in natural chalcogenides. Accordingly, an X-ray absorption near-edge spectroscopy (XANES) study at In L3-edge was undertaken using the instrumental set-up of ID21 beamline at the ESRF (European Synchrotron

Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

International Nuclear Information System (INIS)

Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

2008-01-01

Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

Review of pulmonary toxicity of indium compounds to animals and humans

International Nuclear Information System (INIS)

Tanaka, Akiyo; Hirata, Miyuki; Kiyohara, Yutaka; Nakano, Makiko; Omae, Kazuyuki; Shiratani, Masaharu; Koga, Kazunori

2010-01-01

Due to the increased production of ITO, the potential health hazards arising from occupational exposure to this material have attracted much attention. This review consists of three parts: 1) toxic effects of indium compounds on animals, 2) toxic effects of indium compounds on humans, and 3) recommendations for preventing exposure to indium compounds in the workplace. Available data have indicated that insoluble form of indium compounds, such as ITO, indium arsenide (InAs) and indium phosphide (InP), can be toxic to animals. Furthermore, InP has demonstrated clear evidence of carcinogenic potential in long-term inhalation studies using experimental animals. As for the dangers to humans, some data are available concerning adverse health effects to workers who have been exposed to indium-containing particles. The Japan Society for Occupational Health recommended the value of 3 μg/L of indium in serum as the occupational exposure limit based on biological monitoring to preventing adverse health effects in workers resulting from occupational exposure to indium compounds. Accordingly, it is essential that much greater attention is focused on human exposure to indium compounds, and precautions against possible exposure to indium compounds are most important with regard to health management among indium-handling workers.

Indium-111 octreotide uptake in the surgical scar

Energy Technology Data Exchange (ETDEWEB)

Degirmenci, B.; Bekis, R.; Durak, H.; Derebeck, E. [Dokuz Eylul Univ., Izmir (Turkey). Dept. of Nuclear Medicine; Sen, M. [Dokuz Eylul Univ., Izmir (Turkey). Dept. of Radiation Oncology

1999-07-01

Indium-111 octreotide uptake has been reported in various somatostatin receptor positive tumors, granulomas and autoimmune diseases in which activated leucocytes may play a role, subcutaneous cavernous hemangioma and angiofibroma. We present Indium-111 octreotide uptake in a surgical abdominal scar tissue 1.5 to 6 months after surgery in a patient who had been treated for recurrent carcinoid tumor in the rectosigmoid junction. Indium-111 octreotide uptake in a surgical scar may be related to the binding to somatostatin receptors in the activated lymphocytes and fibroblasts that is previously reported. (orig.) [German] In verschiedenen Somatostatinrezeptor-positiven Tumoren, Granulomen, bei Autoimmunerkrankungen, in denen aktivierte Leukozyten eine Rolle spielen, subcutanen kavernoesen Hammangiomen und Angiofibromen wurde ueber die Anreicherung von Indium-111-Oktreotid berichtet. Wir berichten ueber die Anreicherung von Indium-111-Oktreotid in einer chirurgischen Narbe ueber dem Abdomen nach 1,5 und 6 Monaten bei einem Patienten mit einem Rezidiv-Karzinoid im rektosigmoidalen Uebergang. Die Anreicherung von Indium-111-Oktreotid in chirurgischen Narbengewebe koennte in Zusammenhang stehen mit einer Bindung an Somatostationrezeptoren in aktivierten Lymphozyten und Fibroblasten, ueber die schon berichtet wurde. (orig.)

Trapping saturation of the bump-on-tail instability and electrostatic harmonic excitation in earth's foreshock

Science.gov (United States)

Klimas, Alexander J.

1990-01-01

The Vlasov simulation is used to examine the trapping saturation of the bump-on-tail instability both with and without mode-mode coupling and subsequent harmonic excitation. It is found that adding the pumped harmonic modes leads to a significant difference in the behavior of the phase-space distribution function near the unstable bump at the saturation time of the instability. The pumped modes permit rapid plateau formation on the space-averaged velocity distribution, in effect preventing the onset of the quasi-linear velocity-diffusion saturation mechanism.

Ship Track for Investigating the Charleston Bump 2003 - Office of Ocean Exploration

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — Ship track of the R/V Seward Johnson during the "Investigating the Charleston Bump 2003" expedition sponsored by the National Oceanic and Atmospheric Administration...

Cross-current leaching of indium from end-of-life LCD panels

Energy Technology Data Exchange (ETDEWEB)

Rocchetti, Laura; Amato, Alessia; Fonti, Viviana [Department of Life and Environmental Sciences, Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy); Ubaldini, Stefano [Institute of Environmental Geology and Geoengineering IGAG, National Research Council, Via Salaria km 29300, 00015 Montelibretti, Rome (Italy); De Michelis, Ida [Department of Industrial Engineering, Information and Economy, University of L’Aquila, Via Giovanni Gronchi 18, 67100, Zona industriale di Pile, L’Aquila (Italy); Kopacek, Bernd [ISL Kopacek KG, Beckmanngasse 51, 1140 Wien (Austria); Vegliò, Francesco [Department of Industrial Engineering, Information and Economy, University of L’Aquila, Via Giovanni Gronchi 18, 67100, Zona industriale di Pile, L’Aquila (Italy); Beolchini, Francesca, E-mail: f.beolchini@univpm.it [Department of Life and Environmental Sciences, Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy)

2015-08-15

Graphical abstract: Display Omitted - Highlights: • End-of-life LCD panels represent a source of indium. • Several experimental conditions for indium leaching have been assessed. • Indium is completely extracted with 2 M sulfuric acid at 80 °C for 10 min. • Cross-current leaching improves indium extraction and operating costs are lowered. • Benefits to the environment come from reduction of CO{sub 2} emissions and reagents use. - Abstract: Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2 M sulfuric acid at 80 °C for 10 min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100 ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85–90%, and with 6 steps it was about 50–55%. Indium concentration in the leachate was about 35 mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO{sub 2} (with 10 steps we assessed that the emission of about 90 kg CO{sub 2}-Eq. could be avoided) thanks to the recovery of indium

Fabrication, structure and mechanical properties of indium nanopillars

Energy Technology Data Exchange (ETDEWEB)

Lee, Gyuhyon; Kim, Ju-Young; Budiman, Arief Suriadi; Tamura, Nobumichi; Kunz, Martin; Chen, Kai; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

2010-01-01

Solid and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars was characterized by scanning micro-X-ray diffraction, which shows that the indium pillars were annealed at room temperature with very few dislocations remaining in the samples. The mechanical properties of the solid pillars were characterized using a uniaxial microcompression technique, which demonstrated that the engineering yield stress is {approx}9 times greater than bulk and is {approx}1/28 of the indium shear modulus, suggesting that the attained stresses are close to theoretical strength. Microcompression of hollow indium nanopillars showed evidence of brittle fracture. This may suggest that the failure mode for one of the most ductile metals can become brittle when the feature size is sufficiently small.

Misuse of speed-bumps on two-lane main rural roads. A generalized practice in Venezuela

Energy Technology Data Exchange (ETDEWEB)

Calderas Volcanes, R.J.; Moreno Gonzalez, E.G.

2016-07-01

Settlements of uncontrolled population on side of road in Venezuela originate the excessive use of traffic speed reducers to mitigate accidents. Misuse of these speed control devices generate problem of functionality in the two-lane main rural roads which requires to be studied to demonstrate its effect on the capacity and level of service. Although other factors may occur (i.e, environmental problems and health), the disproportionate use of speed-bumps worsens circulation quality by increase of travel time as most sensitive parameter. Where this effect not can be reversed it should be made efforts to mitigate speed using another traffic-calming device. The studied stretches are selected according to particular characteristics such as: urban settlement, isolated speed-bump and its installation in series, including case without speed-bumps which guarantees the proper contrast. Video cameras to detect the travel time of vehicles are used in each road section, it allow the measures of other parameters. The travel time distribution with or without speed-bumps and probability distribution that characterizes vehicle movement in each stretch allows the simulation and modeling with the ARENA software. Travel time allows obtain the speed which, together with the volume of traffic, determines the level of service according to the Highway Capacity Manual criterion. The economic cost of substitute measures versus travel time is evaluated and may be useful in decision-making or implementation of better policies by transport governmental institutions. (Author)

Pressure bump instability in very large cold bore storage rings

International Nuclear Information System (INIS)

Limon, P.

1983-12-01

Calculations have been done to estimate the circulating current necessary to induce the onset of a pressure bump instability in a cold bore storage ring. For a wide range of storage ring parameters, the instability threshold current is more than an order of magnitude higher than the operating current. 4 references, 2 tables

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride

Directory of Open Access Journals (Sweden)

Rajesh Biswal

2014-07-01

Full Text Available The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In thin films, with electrical resistivity as low as 3.42 × 10−3 Ω·cm and high optical transmittance, in the visible range, of 50%–70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002 to (101 planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.

Thermodynamic Considerations for a Pyrometallurgical Extraction of Indium and Silver from a Jarosite Residue

Directory of Open Access Journals (Sweden)

Stefan Steinlechner

2018-05-01

Full Text Available Indium and silver are technologically important, critical metals, and in the majority of cases, they are extracted as a by-product of another carrier metal. The importance of indium has seen recent growth, and for technological reasons, these metals can be found in industrial residues from primary zinc production, such as the iron precipitate—jarosite. To secure the supply of such metals in Europe, and with the idea of a circular economy and the sustainable use of raw materials, the recycling of such industrial residues is coming into focus. Due to the low value of jarosite, the focus must lie simultaneously on the recovery of valuable metals and the production of high-quality products in order to pursue an economical process. The objective of this article is to give the fundamentals for the development of a successful process to extract the minor elements from roasted jarosite. As such, we use thermodynamic calculations to show the behavior of indium and silver, leading to a recommendation for the required conditions for a successful extraction process. In summary, the formation of chlorine compounds shows high potential to meet the challenge of simultaneously recovering these metals together with zinc at the lowest possible energy input.

Indium solar neutrino experiment using superconducting grains

International Nuclear Information System (INIS)

Bellefon, A. de; Espigat, P.

1984-08-01

In this paper we would like to emphasize the revival of interest for Indium experiment in Europe. Properties of metastable superconducting indium grains are presented and our progress towards making an experiment feasible is reviewed

Cross-current leaching of indium from end-of-life LCD panels.

Science.gov (United States)

Rocchetti, Laura; Amato, Alessia; Fonti, Viviana; Ubaldini, Stefano; De Michelis, Ida; Kopacek, Bernd; Vegliò, Francesco; Beolchini, Francesca

2015-08-01

Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2M sulfuric acid at 80°C for 10min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85-90%, and with 6 steps it was about 50-55%. Indium concentration in the leachate was about 35mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO2 (with 10 steps we assessed that the emission of about 90kg CO2-Eq. could be avoided) thanks to the recovery of indium. This new strategy represents a useful approach for secondary production of indium from waste LCD panels. Copyright © 2015 Elsevier Ltd. All rights reserved.

Growth and shape of indium islands on molybdenum at micro-roughened spots created by femtosecond laser pulses

Science.gov (United States)

Ringleb, F.; Eylers, K.; Teubner, Th.; Schramm, H.-P.; Symietz, C.; Bonse, J.; Andree, S.; Heidmann, B.; Schmid, M.; Krüger, J.; Boeck, T.

2017-10-01

Indium islands on molybdenum coated glass can be grown in ordered arrays by surface structuring using a femtosecond laser. The effect of varying the molybdenum coated glass substrate temperature and the indium deposition rate on island areal density, volume and geometry is investigated and evaluated in a physical vapor deposition (PVD) process. The joined impact of growth conditions and spacing of the femtosecond laser structured spots on the arrangement and morphology of indium islands is demonstrated. The results yield a deeper understanding of the island growth and its precise adjustment to industrial requirements, which is indispensable for a technological application of such structures at a high throughput, for instance as precursors for the preparation of Cu(In,Ga)Se2 micro concentrator solar cells.

Application of the adjoint optimisation of shock control bump for ONERA-M6 wing

Science.gov (United States)

Nejati, A.; Mazaheri, K.

2017-11-01

This article is devoted to the numerical investigation of the shock wave/boundary layer interaction (SWBLI) as the main factor influencing the aerodynamic performance of transonic bumped airfoils and wings. The numerical analysis is conducted for the ONERA-M6 wing through a shock control bump (SCB) shape optimisation process using the adjoint optimisation method. SWBLI is analyzed for both clean and bumped airfoils and wings, and it is shown how the modified wave structure originating from upstream of the SCB reduces the wave drag, by improving the boundary layer velocity profile downstream of the shock wave. The numerical simulation of the turbulent viscous flow and a gradient-based adjoint algorithm are used to find the optimum location and shape of the SCB for the ONERA-M6 airfoil and wing. Two different geometrical models are introduced for the 3D SCB, one with linear variations, and another with periodic variations. Both configurations result in drag reduction and improvement in the aerodynamic efficiency, but the periodic model is more effective. Although the three-dimensional flow structure involves much more complexities, the overall results are shown to be similar to the two-dimensional case.

Mn-implanted, polycrystalline indium tin oxide and indium oxide films

International Nuclear Information System (INIS)

Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

2009-01-01

Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

Indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1982-12-28

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Detection of bump-on-tail reduced electron velocity distributions at the electron foreshock boundary

International Nuclear Information System (INIS)

Fitzenreiter, R.J.; Klimas, A.J.; Scudder, J.D.

1984-02-01

Reduced velocity distributions are derived from three-dimensional measurements of the velocity distribution of electrons in the 7 to 500 eV range in the electron foreshock. Bump-on-tail reduced distributions are presented for the first time at the foreshock boundary consistent with Filbert and Kellogg's proposed time-of-flight mechanism for generating the electron beams. In a significant number of boundary crossings, bump-on-tail reduced distributions were found in consecutive 3 sec measurements made 9 sec apart. It is concluded that, although the beams are linearly unstable to plasma waves according to the Penrose criterion, they persist on a time scale of 3 to 15 sec

Recovery of galium and indium from liquid crystal displays and CIGS photovailtaic modules

NARCIS (Netherlands)

Bisselink, R.; Steeghs, W.; Brouwer, J.G.H.

2014-01-01

Abstract: The increasing amount of electronics, such as consumer products and green technologies (e.g. solar PV cells) increases the demand of metals such as indium and gallium. This increasing demand together with the dependency on import of these metals drive research on recycling of waste

Indium-granulocyte scanning in the painful prosthetic joint

International Nuclear Information System (INIS)

Pring, D.J.; Henderson, R.G.; Keshavarzian, A.; Rivett, A.G.; Krausz, T.; Coombs, R.R.; Lavender, J.P.

1986-01-01

The value of indium-111-labeled granulocyte scanning to determine the presence of infection was assessed in 50 prosthetic joints (41 of which were painful) in 40 patients. Granulocytes were obtained from the patients' blood and labeled in plasma with indium 111 tropolonate. Abnormal accumulation of indium 111 in the region of the prosthesis was noted. Proven infection occurred in 11 prostheses, and all of the infections were detected by indium-111-labeled granulocyte scanning. Nineteen were not infected (including nine asymptomatic controls) and only two produced false-positive scans. This represents a specificity of 89.5%, sensitivity of 100%, and overall accuracy of 93.2%. These results compare favorably with plain radiography. There was no radiologic evidence of infection in three of the infected prostheses, and 10 of the noninfected prostheses had some radiologic features that suggested sepsis. We conclude that indium-granulocyte scanning can reliably detect or exclude infection in painful prosthetic joints and should prove useful in clinical management

Single-mode saturation of the bump-on-tail instability

International Nuclear Information System (INIS)

Simon, A.; Rosenbluth, M.N.

1976-01-01

A slightly unstable plasma with only one or a few linear modes unstable is considered. Nonlinear saturation at small amplitudes has been treated by time-asymptotic analysis which is a generalization of the methods of Bogolyubov and co-workers. In this paper the method is applied to instability in a collisionless plasma governed by the vlasov equation. The bump-on-tail instability is considered for a one-dimensional plasma

Light curves for ''bump Cepheids'' computed with a dynamically zoned pulsation code

International Nuclear Information System (INIS)

Adams, T.F.; Castor, J.E.; Davis, C.G.

1978-01-01

The dynamically zoned pulsation code developed by Castor, Davis, and Davison has been used to recalculate the Goddard model and to calculate three other Cepheid models with the same period (9.8 days). This family of models shows how the bumps and other features of the light and velocity curves change as the mass is varied at constant period. This study, with a code that is capable of producing reliable light curves, shows again that the light and velocity curves for 9.8-day Cepheid models with standard homogeneous compositions do not show bumps like those that are observed unless the mass is significantly lower than the ''evolutionary mass.'' The light and velocity curves for the Goddard model presented here are similar to those computed independently by Fischel, Sparks, and Karp. They should be useful as standards for future investigators

Work function of oxygen exposed lead and lead/indium alloy films

International Nuclear Information System (INIS)

Gundlach, K.H.; Hellemann, H.P.; Hoelzl, J.

1982-01-01

The effect of indium in superconducting tunnel junctions with lead/indium alloy base electrodes is investigated by measuring the vacuum work function of lead, indium, and lead/indium alloy films. It is found that the anomalous decrease of the work function of lead upon exposure to oxygen, explained by the penetration of oxygen into the inner surface of the lead film, is reversed into a slight increase in work function when some indium is added to the lead. This result indicates that the addition of indium provides a protection by suppressing the penetration of oxygen (and probably other gases) into the interior of the thin film

Bump evolution driven by the x-ray ablation Richtmyer-Meshkov effect in plastic inertial confinement fusion Ablators

Directory of Open Access Journals (Sweden)

Loomis Eric

2013-11-01

Full Text Available Growth of hydrodynamic instabilities at the interfaces of inertial confinement fusion capsules (ICF due to ablator and fuel non-uniformities are a primary concern for the ICF program. Recently, observed jetting and parasitic mix into the fuel were attributed to isolated defects on the outer surface of the capsule. Strategies for mitigation of these defects exist, however, they require reduced uncertainties in Equation of State (EOS models prior to invoking them. In light of this, we have begun a campaign to measure the growth of isolated defects (bumps due to x-ray ablation Richtmyer-Meshkov in plastic ablators to validate these models. Experiments used hohlraums with radiation temperatures near 70 eV driven by 15 beams from the Omega laser (Laboratory for Laser Energetics, University of Rochester, NY, which sent a ∼1.25Mbar shock into a planar CH target placed over one laser entrance hole. Targets consisted of 2-D arrays of quasi-gaussian bumps (10 microns tall, 34 microns FWHM deposited on the surface facing into the hohlraum. On-axis radiography with a saran (Cl Heα − 2.76keV backlighter was used to measure bump evolution prior to shock breakout. Shock speed measurements were also performed to determine target conditions. Simulations using the LEOS 5310 and SESAME 7592 models required the simulated laser power be turned down to 80 and 88%, respectively to match observed shock speeds. Both LEOS 5310 and SESAME 7592 simulations agreed with measured bump areal densities out to 6 ns where ablative RM oscillations were observed in previous laser-driven experiments, but did not occur in the x-ray driven case. The QEOS model, conversely, over predicted shock speeds and under predicted areal density in the bump.

Proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices

International Nuclear Information System (INIS)

Singh, R.; Messick, L.J.

1989-01-01

This book contains the proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices. Topics covered include: Growth and characterization of bulk and epitaxial films, Passivation technology, Processing technology, High speed optoelectronic integrated circuits, and Solar cells

Effects of a powered air-purifying respirator intervention on indium exposure reduction and indium related biomarkers among ITO sputter target manufacturing workers.

Science.gov (United States)

Liu, Hung-Hsin; Chen, Chang-Yuh; Lan, Cheng-Hang; Chang, Cheng-Ping; Peng, Chiung-Yu

2016-01-01

This study aimed to evaluate the efficacy of powered air-purifying respirators (PAPRs) worn by the workers, and to investigate the effect of this application on exposure and preclinical effects in terms of workplace measuring and biomarker monitoring in ITO sputter target manufacturing plants and workers, respectively. Fifty-four workers were recruited and investigated from 2010-2012, during which PAPRs were provided to on-site workers in September 2011. Each worker completed questionnaires and provided blood and urine samples for analysis of biomarkers of indium exposure and preclinical effects. Area and personal indium air samples were randomly collected from selected worksites and from participants. The penetration percentage of the respirator (concentration inside respirator divided by concentration outside respirator) was 6.6%. Some biomarkers, such as S-In, SOD, GPx, GST, MDA, and TMOM, reflected the decrease in exposure and showed lower levels, after implementation of PAPRs. This study is the first to investigate the efficacy of PAPRs for reducing indium exposure. The measurement results clearly showed that the implementation of PAPRs reduces levels of indium-related biomarkers. These findings have practical applications for minimizing occupational exposure to indium and for managing the health of workers exposed to indium.

Ship Sensor Observations for Investigating the Charleston Bump 2003 - Office of Ocean Exploration

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — Hourly measurements made by selected ship sensors on the R/V Seward Johnson during the "Investigating the Charleston Bump 2003" expedition sponsored by the National...

Light forces on an indium atonic beam; Lichtkraefte auf einen Indiumatomstrahl

Energy Technology Data Exchange (ETDEWEB)

Kloeter, B.

2007-07-01

In this thesis it was studied, whether indium is a possible candidate for the nanostructuration respectively atomic lithography. For this known method for the generation and stabilization of the light necessary for the laser cooling had to be fitted to the special properties of indium. The spectroscopy of indium with the 451 nm and the 410 nm light yielded first hints that the formulae for the atom-light interaction for a two-level atom cannot be directly transferred to the indium atom. By means of the obtained parameters of the present experiment predictions for a possible Doppler cooling of the indium atomic beam were calculated. Furthermore the possibility for the direct deposition of indium on a substrate was studied.

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

International Nuclear Information System (INIS)

Zheng Yanbin; Li Guang; Wang Wenlong; Li Xiuchang; Jiang Zhigang

2012-01-01

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs. (plasma technology)

TEM EDS analysis of epitaxially-grown self-assembled indium islands

Directory of Open Access Journals (Sweden)

Jasmine Sears

2017-05-01

Full Text Available Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM Energy Dispersive Spectroscopy (EDS. Several sizes of islands are examined, with larger islands exhibiting high (>94% average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters.

The reminiscence bump without memories: The distribution of imagined word-cued and important autobiographical memories in a hypothetical 70-year-old

DEFF Research Database (Denmark)

Koppel, Jonathan; Berntsen, Dorthe

2016-01-01

The reminiscence bump is the disproportionate number of autobiographical memories dating from adolescence and early adulthood. It has often been ascribed to a consolidation of the mature self in the period covered by the bump. Here we stripped away factors relating to the characteristics of autob...

Design and Experimental Development of a Pneumatic Stiffness Adjustable Foot System for Biped Robots Adaptable to Bumps on the Ground

Directory of Open Access Journals (Sweden)

Xizhe Zang

2017-09-01

Full Text Available Walking on rough terrains still remains a challenge that needs to be addressed for biped robots because the unevenness on the ground can easily disrupt the walking stability. This paper proposes a novel foot system with passively adjustable stiffness for biped robots which is adaptable to small-sized bumps on the ground. The robotic foot is developed by attaching eight pneumatic variable stiffness units to the sole separately and symmetrically. Each variable stiffness unit mainly consists of a pneumatic bladder and a mechanical reversing valve. When walking on rough ground, the pneumatic bladders in contact with bumps are compressed, and the corresponding reversing valves are triggered to expel out the air, enabling the pneumatic bladders to adapt to the bumps with low stiffness; while the other pneumatic bladders remain rigid and maintain stable contact with the ground, providing support to the biped robot. The performances of the proposed foot system, including the variable stiffness mechanism, the adaptability on the bumps of different heights, and the application on a biped robot prototype are demonstrated by various experiments.

Polarographic determination of selenium in indium

International Nuclear Information System (INIS)

Kaplan, B.Ya.; Mikheeva, V.A.; Priz, N.B.

1978-01-01

The procedure of determining nx10 -6 % Se in indium after concentrating in an elemental form on arsenic and sulphur has been developed. The selenium content is determined by inversion a.c. polarography on a sulphuric-acid background in the presence of Cu(2), potassium bichromate, and sodium pyrophosphate. 5.7x10 -6 % Se in metal indium has been determined by this procedure, the mean standard deviation being Sr=0.26

Hydrogen Production via Steam Reforming of Ethyl Alcohol over Palladium/Indium Oxide Catalyst

Directory of Open Access Journals (Sweden)

Tetsuo Umegaki

2009-01-01

Full Text Available We report the synergetic effect between palladium and indium oxide on hydrogen production in the steam reforming reaction of ethyl alcohol. The palladium/indium oxide catalyst shows higher hydrogen production rate than indium oxide and palladium. Palladium/indium oxide affords ketonization of ethyl alcohol with negligible by-product carbon monoxide, while indium oxide mainly affords dehydration of ethyl alcohol, and palladium affords decomposition of ethyl alcohol with large amount of by-product carbon monoxide. The catalytic feature of palladium/indium oxide can be ascribed to the formation of palladium-indium intermetallic component during the reaction as confirmed by X-ray diffraction and X-ray photoelectron spectroscopic measurements.

Catalytic property of an indium-deposited powder-type material containing silicon and its dependence on the dose of indium nano-particles irradiated by a pulse arc plasma process

Directory of Open Access Journals (Sweden)

Satoru Yoshimura

2017-06-01

Full Text Available Indium nano-particle irradiations onto zeolite powders were carried out using a pulse arc plasma source system. X-ray photoelectron spectroscopic and scanning electron microscopic studies of an indium irradiated zeolite sample revealed that indium nano-particles were successfully deposited on the sample. Besides, the sample was found to be capable of catalyzing an organic chemical reaction (i.e., Friedel-Crafts alkylation. Then, we examined whether or not the catalytic ability depends on the irradiated indium dose, having established the optimal indium dose for inducing the catalytic effect.

Ultraviolet photometry from the orbiting astronomical observatory. XX. The ultraviolet extinction bump

International Nuclear Information System (INIS)

Savage, B.D.

1975-01-01

Interstellar extinction curves over the wavelength region 1800--3600 A are presented for 36 stars. The stars have E (B-V) in the range 0.03 to 0.55, and are mostly confined to the brighter OB associations distributed along the plane of the Galaxy. Every extinction curve exhibits a broad extinction bump peaking near 2175 A (4.6 μ -1 ). The position of the peak and the profile of the feature appear remarkably constant among the sample of stars. With only a few exceptions, E (lambda)-3320, a measure of the strength of the feature, correlates very well with E (B-V), implying that the bump has an interstellar rather than a circumstellar origin. The observation that the bump position and shape are constant, or very nearly constant, places severe restrictions on the grain geometrical parameters if the feature is to be explained by classical scattering theory employing bulk optical constants. In fact, the restrictions are so severe that an alternate explanation seems to be required unless the dust grains that exist in widely separated regions of space and under very different physical conditions have nearly identical size and shape distributions. Three extinction curves that extend to 1100 A are also presented. These curves show the same general extinction characteristics reported earlier. The curve for 22 Sco provides another example of a star that is []physically associated with nebulosity and that also has abnormally low far-ultraviolet extinction. We have searched the extinction curves for fine structure such as abrupt slope changes or new diffuse interstellar features. Unfortunately, there is no convincing evidence for such structure over the interval 1800--3600 A. (auth)

Indium sulfide precipitation from hydrochloric acid solutions of calcium and sodium chlorides

International Nuclear Information System (INIS)

Kochetkova, N.V.; Bayandina, Yu.E.; Toptygina, G.M.; Shepot'ko, A.O.

1988-01-01

The effect of precipitation duration, acid concentration, indium complexing with chloride ions on the process of indium sulfide chemical precipitation in hydrochloric acid solutions, precipitate composition and dispersity are studied. It is established that indium sulfide solubility increases in solutions with acid concentration exceeding 0.40-0.45 mol/l. Calcium and indium chloride addition to diluted hydrochloric solutions greatly increases the solubility of indium sulfide. The effect of calcium chloride on In 2 S 3 solubility is higher than that of sodium chloride

Neutral complexes of the indium dihalides

Energy Technology Data Exchange (ETDEWEB)

Sinclair, I.; Worrall, I.J. (Lancaster Univ. (UK))

1982-03-15

The neutral complexes In/sub 2/X/sub 4/.2L (X=Cl, Br, I; L 1,4-dioxan, tetrahydropyran, tetrahydrofuran, tetrahydrothiophene), In/sub 2/X/sub 4/.2L (X=Br, I; Ldimethylsulphide), In/sub 2/X/sub 4/.4L (X=Cl, Br, I; Lpiperidine, piperazine, morpholine), and In/sub 2/X/sub 4/.4L (X=Br, I; L=pyridine, dimethylsulphoxide) have been prepared. Solid state Raman spectra indicate that the compounds contain indium-indium bonds.

Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

Science.gov (United States)

Cardelino, B. H.; Moore, C. E.; Cardelino, C. A.; Frazier, D. O.; Backmann, K. J.

2000-01-01

The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

Synthesis and photophysical properties of indium(III) phthalocyanine derivatives

Energy Technology Data Exchange (ETDEWEB)

Özceşmeci, İbrahim, E-mail: ozcesmecii@itu.edu.tr [Department of Chemistry, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey); Gelir, Ali [Department of Physics, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey); Gül, Ahmet [Department of Chemistry, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey)

2014-03-15

Three chloroindium(III) phthalocyanine derivatives bearing four aromatic (naphthalene or pyrene) or aliphatic (hexylthio) groups were prepared from corresponding phthalonitrile compounds. The indium(III) phthalocyanine derivatives were characterized with elemental analyses, mass, proton nuclear magnetic resonance ({sup 1}H NMR), Fourier transform infrared spectroscopy (FT-IR) and ultraviolet–visible spectroscopy (UV–vis) techniques. Quantum yields and the energy transfer from the substituents to phthalocyanine core were examined. No energy transfer was observed for 5. The energy transfer efficiency from pyrene units to indium phthalocyanine core was calculated as 0.27 for 6. Quantum yields of all samples were very small due to heavy atom effect of indium atom in the core. It was also observed that upon binding of pyrene and naphthalene units to indium phthalocyanine as substituents, the quantum yields of indium phthalocyanine parts of 5 and 6 decreased. -- Highlights: • Three chloroindium(III) phthalocyanines were prepared and characterized. • Aggregation properties of these compounds were investigated. • The energy transfer efficiency was examined. • Quantum yield of these systems were calculated.

Ultra-fast Movies Resolve Ultra-short Pulse Laser Ablation and Bump Formation on Thin Molybdenum Films

Science.gov (United States)

Domke, Matthias; Rapp, Stephan; Huber, Heinz

For the monolithic serial interconnection of CIS thin film solar cells, 470 nm molybdenum films on glass substrates must be separated galvanically. The single pulse ablation with a 660 fs laser at a wavelength of 1053 nm is investigated in a fluence regime from 0.5 to 5.0 J/cm2. At fluences above 2.0 J/cm2 bump and jet formation can be observed that could be used for creating microstructures. For the investigation of the underlying mechanisms of the laser ablation process itself as well as of the bump or jet formation, pump probe microscopy is utilized to resolve the transient ablation behavior.

Effect of replacement of tin doped indium oxide (ITO) by ZnO: analysis of environmental impact categories

Science.gov (United States)

Ziemińska-Stolarska, Aleksandra; Barecka, Magda; Zbiciński, Ireneusz

2017-10-01

Abundant use of natural resources is doubtlessly one of the greatest challenges of sustainable development. Process alternatives, which enable sustainable manufacturing of valuable products from more accessible resources, are consequently required. One of examples of limited resources is Indium, currently broadly used for tin doped indium oxide (ITO) for production of transparent conductive films (TCO) in electronics industry. Therefore, candidates for Indium replacement, which would offer as good performance as the industrial state-of-the-art technology based on ITO are widely studied. However, the environmental impact of new layers remains unknown. Hence, this paper studies the environmental effect of ITO replacement by zinc oxide (ZnO) by means life cycle assessment (LCA) methodology. The analysis enables to quantify the environmental impact over the entire period of life cycle of products—during manufacturing, use phase and waste generation. The analysis was based on experimental data for deposition process. Further, analysis of different impact categories was performed in order to determine specific environmental effects related to technology change. What results from the analysis, is that ZnO is a robust alternative material for ITO replacement regarding environmental load and energy efficiency of deposition process which is also crucial for sustainable TCO layer production.

An advanced case of indium lung disease with progressive emphysema.

Science.gov (United States)

Nakano, Makiko; Tanaka, Akiyo; Hirata, Miyuki; Kumazoe, Hiroyuki; Wakamatsu, Kentaro; Kamada, Dan; Omae, Kazuyuki

2016-09-30

To report the occurrence of an advanced case of indium lung disease with severely progressive emphysema in an indium-exposed worker. A healthy 42-year-old male smoker was employed to primarily grind indium-tin oxide (ITO) target plates, exposing him to indium for 9 years (1998-2008). In 2004, an epidemiological study was conducted on indium-exposed workers at the factory in which he worked. The subject's serum indium concentration (In-S) was 99.7 μg/l, while his serum Krebs von den Lungen-6 level was 2,350 U/ml. Pulmonary function tests showed forced vital capacity (FVC) of 4.17 l (91.5% of the JRS predicted value), forced expiratory volume in 1 s (FEV 1 ) of 3.19 l (80.8% of predicted), and an FEV 1 -to-FVC ratio of 76.5%. A high-resolution chest computed tomography (HRCT) scan showed mild interlobular septal thickening and mild emphysematous changes. In 2008, he was transferred from the ITO grinding workplace to an inspection work section, where indium concentrations in total dusts had a range of 0.001-0.002 mg/m 3 . In 2009, the subject's In-S had increased to 132.1 μg/l, and pulmonary function tests revealed obstructive changes. In addition, HRCT scan showed clear evidence of progressive lung destruction with accompanying severe centrilobular emphysema and interlobular septal thickening in both lung fields. The subject's condition gradually worsened, and in 2015, he was registered with the Japan Organ Transplant Network for lung transplantation (LTx). Heavy indium exposure is a risk factor for emphysema, which can lead to a severity level that requires LTx as the final therapeutic option.

Seeing the Unseen: MIR Spectroscopic Constraints on Quasar Big Blue Bumps

Science.gov (United States)

Gallagher, Sarah; Hines, Dean; Leighly, Karen; Ogle, Patrick; Richards, Gordon

2008-03-01

The IRS on Spitzer offers an exciting opportunity for detailed, mid-infrared spectroscopy of z~2 quasars for the first time. This epoch, sampling the peak of the quasar luminosity evolution, is particularly important for understanding the nature of quasar activity in the most massive galaxies. We aim to use this powerful tool to constrain the shape and power of the far-ultraviolet through soft-X-ray ionizing continuum of luminous quasars. Though these so-called `big blue bumps' dominate the power of quasar spectral energy distributions, they are largely unobservable as a result of hydrogen opacity in the Universe. However, we can determine the properties of the big blue bump by studying emission lines from ions in the coronal line region that emit in the mid-infrared and are created by those same energetic and elusive photons. We propose deep, high quality IRS observations of 5 luminous quasars with a range of HeII emission properties to investigate the mid-infrared spectral region in depth and constrain the shape of the ionizing continuum in each quasar. In addition, these high S/N spectra will provide templates for interpreting lower resolution, lower S/N IRS spectra.

High-order integral equation methods for problems of scattering by bumps and cavities on half-planes.

Science.gov (United States)

Pérez-Arancibia, Carlos; Bruno, Oscar P

2014-08-01

This paper presents high-order integral equation methods for the evaluation of electromagnetic wave scattering by dielectric bumps and dielectric cavities on perfectly conducting or dielectric half-planes. In detail, the algorithms introduced in this paper apply to eight classical scattering problems, namely, scattering by a dielectric bump on a perfectly conducting or a dielectric half-plane, and scattering by a filled, overfilled, or void dielectric cavity on a perfectly conducting or a dielectric half-plane. In all cases field representations based on single-layer potentials for appropriately chosen Green functions are used. The numerical far fields and near fields exhibit excellent convergence as discretizations are refined-even at and around points where singular fields and infinite currents exist.

Preparation of RF reactively sputtered indium-tin oxide thin films with optical properties suitable for heat mirrors

International Nuclear Information System (INIS)

Boyadzhiev, S; Dobrikov, G; Rassovska, M

2008-01-01

Technologies are discussed for preparing and characterizing indium-tin oxide (ITO) thin films with properties appropriate for usage as heat mirrors in solar thermal collectors. The samples were prepared by means of radio frequency (RF) reactive sputtering of indium-tin targets in oxygen. The technological parameters were optimized to obtain films with optimal properties for heat mirrors. The optical properties of the films were studied by visible and infra-red (IR) spectrophotometry and laser ellipsometry. The reflectance of the films in the thermal IR range was investigated by a Fourier transform infra-red (FTIR) spectrophotometer. Heating of the substrates during the sputtering and their post deposition annealing in different environments were also studied. The ultimate purpose of the present research being the development of a technological process leading to low-cost ITO thin films with high transparency in the visible and near IR (0.3-2.4 μm) and high reflection in the thermal IR range (2.5-25 μm), we investigated the correlation of the ITO thin films structural and optical properties with the technological process parameters - target composition and heat treatment

Study on indium leaching from mechanically activated hard zinc residue

Directory of Open Access Journals (Sweden)

Yao J.H.

2011-01-01

Full Text Available In this study, changes in physicochemical properties and leachability of indium from mechanically activated hard zinc residue by planetary mill were investigated. The results showed that mechanical activation increased specific surface area, reaction activity of hard zinc residue, and decreased its particle size, which had a positive effect on indium extraction from hard zinc residue in hydrochloric acid solution. Kinetics of indium leaching from unmilled and activated hard zinc residue were also investigated, respectively. It was found that temperature had an obvious effect on indium leaching rate. Two different kinetic models corresponding to reactions which are diffusion controlled, [1-(1- x1/3]2=kt and (1-2x/3-(1-x2/3=kt were used to describe the kinetics of indium leaching from unmilled sample and activated sample, respectively. Their activation energies were determined to be 17.89 kJ/mol (umilled and 11.65 kJ/mol (activated within the temperature range of 30°C to 90°C, which is characteristic for a diffusion controlled process. The values of activation energy demonstrated that the leaching reaction of indium became less sensitive to temperature after hard zinc residue mechanically activated by planetary mill.

Labelling of bacteria with indium chelates

International Nuclear Information System (INIS)

Kleinert, P.; Pfister, W.; Endert, G.; Sproessig, M.

1985-01-01

The indium chelates were prepared by reaction of radioactive indiumchloride with 10 μg oxine, 15 μg tropolone and 3 mg acetylacetone, resp. The formed chelates have been incubated with 10 9 germs/ml for 5 minutes, with labelling outputs from 90 to 95%. Both gram-positive (Streptococcus, Staphylococcus) and gram-negative bacteria (Escherichia coli) can be labelled. The reproductive capacity of the bacteria was not impaired. The application of indium labelled bacteria allows to show the distribution of microorganisms within the living organism and to investigate problems of bacterial adherence. (author)

Indium-111 oxine labelling of white blood cells

International Nuclear Information System (INIS)

Lavender, J.P.; Silvester, D.J.; Goldman, J.; Hammersmith Hospital, London

1978-01-01

Following work done by Professor John McAfee and Mathew Thakur at the MRS Cyclotron Unit a method is available for labelling cells with indium-111 which results in a stable intracellular marker. The method uses indium-111-8 hydroxyquinoline (111In oxine) which is a lipoid soluble complex which goes across the cell membrane and results in the deposition of indium into various subcellular structures. It has been applied to various preparations of white cells, platelets and also malignant cells. Autologous granulocytes have been used to identify inflammatory lesions in 35 patients. By similar means autologous lymphocytes can also be labelled and reinfused. Lymphocytes have been shown in animals to circulate from the blood via the lymphatic system and then returning to the blood once more. The same phenomenon can be seen in man using indium labelled lymphocytes. Lymph nodes become visible at between 12 and 18 hours and recirculation of labelled cells can be shown on the blood activity curves. Certain problems arise concerning cell behaviour after labelling which appear due to irradiation of cells rather than chemical toxicity. (author)

Formation and growth of embedded indium nanoclusters by In2+ implantation in silica

International Nuclear Information System (INIS)

Santhana Raman, P.; Nair, K.G.M.; Kesavamoorthy, R.; Panigrahi, B.K.; Dhara, S.; Ravichandran, V.

2007-01-01

Indium nanoclusters are synthesized in an amorphous silica matrix using an ion-implantation technique. Indium ions (In 2+ ) with energy of 890 keV are implanted on silica to fluences in the range of 3 x 10 16 -3 x 10 17 cm -2 . The formation of indium nanoclusters is confirmed by optical absorption spectrometry and glancing incidence X-ray diffraction studies. A low frequency Raman scattering technique is used to study the growth of embedded indium nanoclusters in the silica matrix as a function of fluence and post-implantation annealing duration. Rutherford backscattering spectrometry studies show the surface segregation of implanted indium. Photoluminescence studies indicate the formation of a small quantity of indium oxide phase in the ion-implanted samples. (orig.)

Thermoelectric flux effect in superconducting indium

International Nuclear Information System (INIS)

Van Harlingen, D.J.

1977-01-01

In this paper we discuss a thermoelectric effect in superconductors which provides a mechanism for studying quasiparticle relaxation and scattering processes in non-equilibrium superconductors by transport measurements. We report measurements of the thermoelecric flux effect in samples consisting of indium and lead near the In transition temperature; in this temperature range, the contribution to DELTA/sub TAU/ from the Pb is insignificant and so values of OMEGA(T) are obtained for indium. The results of our experiments may be summarized as follows: (1) we have a thermally-generated flux effect in 5 superconducting In-Pb toroidal samples, (2) experimental tests suggest that the observed effect does indeed arise from the proposed thermoelectric flux effect, (3) OMEGA(T) for indium is found to diverge as (T/sub c/ - T)/sup -3/2/ more rapidly than predicted by simple theory, (4) OMEGA(T) at T/T sub c/ = .999 is nearly 10/sup 5/ larger than initially expected, (5) OMEGA (T) roughly correlates with the magnitude of the normal state thermoelectric coefficient for our samples

Investigation into cathode polarization during deposition of rhodium-nickel and rhodium-indium alloys

International Nuclear Information System (INIS)

Evdokimova, N.V.; Byacheslavov, P.M.; Lokshtanova, O.G.

1979-01-01

The results of kinetic regularities experimental investigations during electrodeposition of rhodium-nickel and rhonium-indium alloys are presented. Methods of general and partial polarization curves have been used to show the nature of polarization during the rhonium-nickel and rhodium-indium alloys deposition. It is shown that indium into the rhodium-indium alloy and nickel into the rhodium-nickel alloy deposit with great depolarization ( PHIsub(In)sup(0)=-0.33B, PHIsub(Ni)sup(0)=-0.23B). Indium and nickel in pure form do not deposit from the electrolytes of the given composition (H 2 SO 4 - 50 g/l, HNH 2 SO 3 -10 g/l). The recalculation of partial polarization curve of indium precipitation into the rhodium-indium alloy in the mixed kinetics coordinates gives a straight line with 40 mV inclination angle. This corresponds to the delayed stage of the second electron addition with the imposition of diffusion limitations

Average formation number n-barOH of colloid-type indium hydroxide

International Nuclear Information System (INIS)

Stefanowicz, T.; Szent-Kirallyine Gajda, J.

1983-01-01

Indium perchlorate in perchloric acid solution was titrated with sodium hydroxide solution to various pH values. Indium hydroxide colloid was removed by ultracentrifugation and supernatant solution was titrated with base to neutral pH. The two-stage titration data were used to calculate the formation number of indium hydroxide colloid, which was found to equal n-bar OH = 2.8. (author)

Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

International Nuclear Information System (INIS)

Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre

2011-01-01

Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl 3 , SnCl 4 and NH 3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ∼ 40-1160 nm. After calcination at 550 o C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.

Quantification of indium in steel using PIXE

International Nuclear Information System (INIS)

Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J.C.

1989-01-01

The quantitative analysis of steel endodontics tools was carried out using low-energy protons (≤ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important. (orig.)

Quantification of indium in steel using PIXE

Energy Technology Data Exchange (ETDEWEB)

Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J.C.

1989-04-01

The quantitative analysis of steel endodontics tools was carried out using low-energy protons (/le/ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important. (orig.).

Upscaling of Indium Tin Oxide (ITO)-Free Polymer Solar Cells

DEFF Research Database (Denmark)

Angmo, Dechan

Polymer solar cells (PSCs) aim to produce clean energy that is cost-competitive to energy produced by fossil fuel-based conventional energy sources. From an environmental perspective, PSCs already compares favorably to other solar cell technologies in terms of fewer emissions of greenhouse gases......, represents majority of the share of cost and energy footprint in terms of materials and processing in a conventional PSC module. Furthermore, the scarcity of indium is feared to create bottleneck in the dawning PSC industry and its brittle nature is an obstacle for fast processing of PSCs on flexible...

The indium-oxygen system, ch. 5

International Nuclear Information System (INIS)

Dillen, A.J. van

1977-01-01

This chapter is divided into three sections: 1) a survey of the literature concerning the indiumoxygen system, 2) the adsorption of oxygen at pure and partially oxidized indium surfaces in the temperature range 20-180degC, and 3) the oxidation of indium at temperatures above 180degC. The oxygen uptake is determined volumetrically and gravimetrically. The influence of the melting point is considered and the results are compared with data from the literature. The oxide layer is amorphous at lower temperatures but above 350degC, crystallisation of In 2 O 3 takes place

Evolution of end-of-range damage and transient enhanced diffusion of indium in silicon

Science.gov (United States)

Noda, T.

2002-01-01

Correlation of evolution of end-of-range (EOR) damage and transient enhanced diffusion (TED) of indium has been studied by secondary ion mass spectrometry and transmission electron microscopy. A physically based model of diffusion and defect growth is applied to the indium diffusion system. Indium implantation with 200 keV, 1×1014/cm2 through a 10 nm screen oxide into p-type Czochralski silicon wafer was performed. During postimplantation anneal at 750 °C for times ranging from 2 to 120 min, formation of dislocation loops and indium segregation into loops were observed. Simulation results of evolution of EOR defects show that there is a period that {311} defects dissolve and release free interstitials before the Ostwald ripening step of EOR dislocation loops. Our diffusion model that contains the interaction between indium and loops shows the indium pileup to the loops. Indium segregation to loops occurs at a pure growth step of loops and continues during the Ostwald ripening step. Although dislocation loops and indium segregation in the near-surface region are easily dissolved by high temperature annealing, EOR dislocation loops in the bulk region are rigid and well grown. It is considered that indium trapped by loops with a large radius is energetically stable. It is shown that modeling of the evolution of EOR defects is important for understanding indium TED.

Synthesis and characterization of five-coordinated indium amidinates

Energy Technology Data Exchange (ETDEWEB)

Riahi, Yasaman

2016-07-29

The focus of this work is synthesis, characterization and exploring the reactivity of new indium amidinate compounds of the type R{sub 2}InX (R = R''NCR'NR''; R' = Ph, R'' = SiMe{sub 3}, iPr, dipp; X = Br, Cl) with the coordination number of five and R{sub 3}In (R = Me{sub 3}SiNCPhNSiMe{sub 3}) with the coordination number of six. By using amidinates as chelating ligands the electron deficiency of indium atom will be resolved. Additionally, by using different substituents the study of the different synthesized indium amidinates has become possible. The selected method for the synthesis allows the carbodiimides to react with organolithium compounds to get the corresponding lithium amidinates. Afterwards the resulting lithium amidinates take part in transmetalation reactions with InBr{sub 3} and InCl{sub 3}. The study of the reactivity of indium amidinate complexes including nucleophilic reactions as well as their reduction were also examined. Beside crystal structure analysis, nuclear magnetic resonance spectroscopy as well as elemental analysis has been applied to characterize the compounds.

Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties

Directory of Open Access Journals (Sweden)

Hope Greg

2008-01-01

Full Text Available Abstract Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L−1In2(SO43-0.002 mol L−1SeO2-0.02 mol L−1SDS-0.01 mol L−1citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template and SDS (soft template.

Synthesis and decomposition of a novel carboxylate precursor to indium oxide

Science.gov (United States)

Hepp, Aloysius F.; Andras, Maria T.; Duraj, Stan A.; Clark, Eric B.; Hehemann, David G.; Scheiman, Daniel A.; Fanwick, Phillip E.

1994-01-01

Reaction of metallic indium with benzoyl peroxide in 4-1 methylpyridine (4-Mepy) at 25 C produces an eight-coordinate mononuclear indium(III) benzoate, In(eta(sup 2)-O2CC6H5)3(4-Mepy)2 4H2O (I), in yields of up to 60 percent. The indium(III) benzoate was fully characterized by elemental analysis, spectroscopy, and X-ray crystallography; (I) exists in the crystalline state as discrete eight-coordinate molecules; the coordination sphere around the central indium atom is best described as pseudo-square pyramidal. Thermogravimetric analysis of (I) and X-ray diffraction powder studies on the resulting pyrolysate demonstrate that this new benzoate is an inorganic precursor to indium oxide. Decomposition of (I) occurs first by loss of 4-methylpyridine ligands (100 deg-200 deg C), then loss of benzoates with formation of In2O3 at 450 C. We discuss both use of carboxylates as precursors and our approach to their preparation.

Thermal expansion and volumetric changes during indium phosphide melting

International Nuclear Information System (INIS)

Glazov, V.M.; Davletov, K.; Nashel'skij, A.Ya.; Mamedov, M.M.

1977-01-01

The results of the measurements of a thermal expansion were summed up at various temperatures as a diagram in coordinates (Δ 1/1) approximately F(t). It was shown that an appreciable deviation of the relationship (Δ1/1) approximately f(t) from the linear law corresponded to a temperature of 500-550 deg C. It was noted that the said deviation was related to an appreciable thermal decomposition of indium phosphide as temperature increased. The strength of the inter-atomic bond of indium phosphide was calculated. Investigated were the volumetric changes of indium phosphide on melting. The resultant data were analyzed with the aid of the Clausius-Clapeyron equation

Method for forming indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1984-03-13

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Sputtering of neutral and ionic indium clusters

International Nuclear Information System (INIS)

Ma, Z.; Coon, S.R.; Calaway, W.F.; Pellin, M.J.; Gruen, D.M.; Von Nagy-Felsobuki, E.I.

1993-01-01

Secondary neutral and secondary ion cluster yields were measured during the sputtering of a polycrystalline indium surface by normally incident ∼4 keV Ar + ions. In the secondary neutral mass spectra, indium clusters as large as In 32 were observed. In the secondary ion mass spectra, indium clusters up to In 18 + were recorded. Cluster yields obtained from both the neutral and ion channel exhibited a power law dependence on the number of constituent atoms, n, in the cluster, with the exponents measured to be -5.6 and -4. 1, respectively. An abundance drop was observed at n=8, 15, and 16 in both the neutral and ion yield distributions suggesting that the stability of the ion (either secondary ion or photoion) plays a significant role in the observed distributions. In addition, our experiments suggest that unimolecular decomposition of the neutral cluster may also plays an important role in the measured yield distributions

The effect of annealing ambient on surface segregation in indium implanted sapphire

International Nuclear Information System (INIS)

Sood, D.K.; Victoria University of Technology, Melbourne; Zhou, W.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai Institute of Metallurgy; Cao, D.X.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai, SH

1991-01-01

A systematic study of the effect of annealing ambient on both indium surface segregation and lattice damage recovery of single crystal Al 2 O 3 has been done by performing 1 hour anneals at 800 deg C for the samples identically implanted with indium ions at 100keV energy to a high dose of 5x10 16 ions/cm 2 . Following solid phase epitaxial re-crystallization of amorphous layer, the indium dopant shows rapid thermal migration. The indium redistribution consists of 2 parts: 1. appreciable broadening corresponding to diffusion within the amorphous layer, and 2. indium segregation to the free surface to form In 2 O 3 , or escape out of the surface to sublime into the surrounding ambient. Lattice damage recovery depends on indium concentration profile in amorphous layer of Al 2 O 3 which is directly influenced by the annealing ambient. It is confirmed that the presence of moisture or oxygen in annealing ambient results in In 2 O 3 formation on the surface. (author). 6 refs.; 3 figs.; 1 tab

Radiochemical studies of the separation of some chloro-complexes of tin, antimony, cadmium and indium

International Nuclear Information System (INIS)

Ramamoorthy, N.; Mani, R.S.

1976-01-01

Radioisotopes of tin, antimony, cadmium and indium such as tin-113, antimony-124, antimony-125, cadmium-109, cadmium-115, indium-113m and indium-111 find extensive applications as tracers in various fields. These isotopes are produced by irradiation of targets in a reactor or a cyclotron. It is usually observed that in addition to the nuclear reactions giving rise to the desired isotopes, side reactions also take place giving rise to radionuclidic contaminants. Thus, antimony-125, indium-114m and indium-114 will be present in the cyclotron produced indium-111. The authors have studied column chromatography over hydrous zirconia for the separation of antimony from tin and indium, and cadmium from indium. These studies have thrown light on the role and behaviour of antimony-125 present as an impurity in tin-113 during the preparation of tin-113-indium-113m generators and have indicated methods for the preparation of 115 Cd-sup(115m)In generators and for separation of 111 In from proton irradiated cadmium targets. (Authors)

First-principles investigation of indium diffusion in a silicon substrate

International Nuclear Information System (INIS)

Yoon, Kwan-Sun; Hwang, Chi-Ok; Yoo, Jae-Hyun; Won, Tae-Young

2006-01-01

In this paper, we report the total energy, the minimum energy path, and the migration energy of indium in a silicon substrate by using ab-initio calculations. Stable configurations during indium diffusion were obtained from the calculation of the total energy, and we estimated the minimum energy path (MEP) with the nudged elastic band (NEB) method. After finding the MEP, we found the energy barrier for the diffusion of indium to be 0.8 eV from an exact calculation of the total energies at the minimum and the transition state.

Spectrophotometric determination of indium with chromazurol S and dimethyllaurylbenzylammonium bromide

International Nuclear Information System (INIS)

Kwapulinska, G.; Buhl, F.

1988-01-01

The ternary system: indium-chromazurol S (CHAS)-dimethyllaurylbenzylammonium bromide (ST) was applied for determination of microgramme amounts of indium. The addition of ST enhances the sensitivity of the method; at λ max =625 nm the molar absorptivity of In-CHAS-ST complex equals 1.74 x 10 5 . The system obeyes the Lambert-Beer law in the range of indium concentration from 0.04 to 0.48 ppm. The maximal absorbance was obtained at pH 6. The complex is formed immediately and is stable during 2 hours. 3 figs., 10 refs. (author)

Blocking of indium incorporation by antimony in III-V-Sb nanostructures

International Nuclear Information System (INIS)

Sanchez, A M; Beltran, A M; Ben, T; Molina, S I; Beanland, R; Gass, M H; De la Pena, F; Walls, M; Taboada, A G; Ripalda, J M

2010-01-01

The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.

Bumping structure of initial energy density distributions and peculiarities of pion spectra in A + A collisions

International Nuclear Information System (INIS)

Borysova, M.S.

2012-01-01

The effect of a fluctuating bumping structure of the initial conditions on spectra and the collective evolution of matter created in heavy-ion collisions in the frameworks of the Hydro-Kinetic Model is investigated. As motivated by the glasma-flux-tube scenario, the initial conditions are modeled by the set of four high energy-density tube-like fluctuations with longitudinally homogeneous structure within some space-rapidity region in a boost-invariant 2D geometry. It was found that the presence of transversally bumping tube-like fluctuations in initial conditions strongly affects the hydrodynamic evolution and leads to emergence of conspicuous structures in the calculated pion spectra. It was observed that the 4 tube initial configuration generates a four-peak structure in the final azimuthal distributions of one-particle spectra.

Anelasticity of polycrystalline indium

Energy Technology Data Exchange (ETDEWEB)

Sapozhnikov, K., E-mail: k.sapozhnikov@mail.ioffe.ru [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Golyandin, S. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Kustov, S. [Dept. de Fisica, Universitat de les Illes Balears, Cra Valldemossa km 7.5, E 07122 Palma de Mallorca (Spain)

2009-09-15

Mechanisms of anelasticity of polycrystalline indium have been studied over wide ranges of temperature (7-320 K) and strain amplitude (2 x 10{sup -7}-3.5 x 10{sup -4}). Measurements of the internal friction and Young's modulus have been performed by means of the piezoelectric resonant composite oscillator technique using longitudinal oscillations at frequencies of about 100 kHz. The stages of the strain amplitude dependence of the internal friction and Young's modulus defect, which can be attributed to dislocation - point defect and dislocation - dislocation interactions, have been revealed. It has been shown that thermal cycling gives rise to microplastic straining of polycrystalline indium due to the anisotropy of thermal expansion and to appearance of a 'recrystallization' internal friction maximum in the temperature spectra of amplitude-dependent anelasticity. The temperature range characterized by formation of Cottrell's atmospheres of point defects around dislocations has been determined from the acoustic data.

Photoluminescence of monovalent indium centres in phosphate glass

OpenAIRE

Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

2015-01-01

Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL ...

Properties of Polydisperse Tin-doped Dysprosium and Indium Oxides

Directory of Open Access Journals (Sweden)

Malinovskaya Tatyana

2017-01-01

Full Text Available The results of investigations of the complex permittivity, diffuse-reflectance, and characteristics of crystal lattices of tin-doped indium and dysprosium oxides are presented. Using the methods of spectroscopy and X-ray diffraction analysis, it is shown that doping of indium oxide with tin results in a significant increase of the components of the indium oxide complex permittivity and an appearance of the plasma resonance in its diffuse-reflectance spectra. This indicates the appearance of charge carriers with the concentration of more than 1021 cm−3 in the materials. On the other hand, doping of the dysprosium oxide with the same amount of tin has no effect on its optical and electromagnetic properties.

Multipole error analysis using local 3-bump orbit data in Fermilab Recycler

International Nuclear Information System (INIS)

Yang, M.J.; Xiao, M.

2005-01-01

The magnetic harmonic errors of the Fermilab Recycler ring were examined using circulating beam data taken with closed local orbit bumps. Data was first parsed into harmonic orbits of first, second, and third order. Each of which was analyzed for sources of magnetic errors of corresponding order. This study was made possible only with the incredible resolution of a new BPM system that was commissioned after June of 2003

Stability aspects of hydrogen-doped indium oxide

OpenAIRE

Jost, Gabrielle; Hamri, Alexander Nordin; Köhler, Florian; Hüpkes, Jürgen

2015-01-01

Transparent conductive oxides play an important role as contact layers in various opto-electronic devices such as solar cells or LEDs. Whilst crystalline materials e.g. zinc oxide (ZnO), tin oxide (Sn2O3) or tin doped indium oxide (ITO) have already been vastly investigated and applied [1] hydrogen doped indium oxide (In2O3:H) entered the scene a while ago as a new material with a superior trade-off between electrical and optical performance. In2O3:H is commonly deposited at room temperature...

Indium 111 leucocyte scintigraphy in abdominal sepsis

International Nuclear Information System (INIS)

Baba, A.A.; McKillop, J.H.; Gray, H.W.; Cuthbert, G.F.; Neilson, W.; Anderson, J.R.

1990-01-01

We have studied the clinical utility of indium 111 autologous leucocyte scintigraphy retrospectively in 45 patients presenting with suspected intra-abdominal sepsis. The sensitivity was 95% (21/22) and the specificity was 91% (21/23). Some 34 of the studies (17 positive and 17 negative) were considered helpful in furthering patient management (76%) and 8, unhelpful (18%). In 3, the study results were misleading and led to inappropriate treatment. Indium 111 scintigraphy, whether positive or negative, provides information in patients with suspected intra-abdominal sepsis upon which therapeutic decisions can be based. (orig.)

Electrochemical removal of indium ions from aqueous solution using iron electrodes

International Nuclear Information System (INIS)

Chou, Wei-Lung; Huang, Yen-Hsiang

2009-01-01

The removal of indium ions from aqueous solution was carried out by electrocoagulation in batch mode using an iron electrode. Various operating parameters that could potentially affect the removal efficiency were investigated, including the current density, pH variation, supporting electrolyte, initial concentration, and temperature. The optimum current density, supporting electrolyte concentration, and temperature were found to be 6.4 mA/cm 2 , 0.003N NaCl, and 298 K, respectively. When the pH values lower than 6.1, the removal efficiencies of indium ions via electrocoagulation were up to 5 times greater than those by adding sodium hydroxide. The indium ion removal efficiency decreased with an increase in the initial concentration. Results for the indium ion removal kinetics at various current densities show that the kinetic rates conformed to the pseudo-second-order kinetic model with good correlation. The experimental data were also tested against different adsorption isotherm models for describing the electrocoagulation process. The adsorption of indium ions preferably fitting the Langmuir adsorption isotherm suggests monolayer coverage of adsorbed molecules.

Electrochemical removal of indium ions from aqueous solution using iron electrodes

Energy Technology Data Exchange (ETDEWEB)

Chou, Wei-Lung, E-mail: wlchou@sunrise.hk.edu.tw [Department of Safety, Health and Environmental Engineering, Hungkuang University, No. 34 Chung-Chie Road, Sha-Lu, Taichung 433, Taiwan (China); Huang, Yen-Hsiang [Department of Safety, Health and Environmental Engineering, Hungkuang University, No. 34 Chung-Chie Road, Sha-Lu, Taichung 433, Taiwan (China)

2009-12-15

The removal of indium ions from aqueous solution was carried out by electrocoagulation in batch mode using an iron electrode. Various operating parameters that could potentially affect the removal efficiency were investigated, including the current density, pH variation, supporting electrolyte, initial concentration, and temperature. The optimum current density, supporting electrolyte concentration, and temperature were found to be 6.4 mA/cm{sup 2}, 0.003N NaCl, and 298 K, respectively. When the pH values lower than 6.1, the removal efficiencies of indium ions via electrocoagulation were up to 5 times greater than those by adding sodium hydroxide. The indium ion removal efficiency decreased with an increase in the initial concentration. Results for the indium ion removal kinetics at various current densities show that the kinetic rates conformed to the pseudo-second-order kinetic model with good correlation. The experimental data were also tested against different adsorption isotherm models for describing the electrocoagulation process. The adsorption of indium ions preferably fitting the Langmuir adsorption isotherm suggests monolayer coverage of adsorbed molecules.

3D Integration of MEMS and IC: Design, technology and simulations

OpenAIRE

Schjølberg-Henriksen, Kari

2009-01-01

* 3D integration: Opportunities and trends* e-CUBES: Tire pressure monitoring system (TPMS)* Package design including thermo-mechanical modeling* Technology development* Sensor packaging concept* Gold stud bump bonding* Device characterization and testing* Summary and outlook 3D Integration of MEMS and IC: Design, technology and simulations

The reminiscence bump without memories: The distribution of imagined word-cued and important autobiographical memories in a hypothetical 70-year-old.

Science.gov (United States)

Koppel, Jonathan; Berntsen, Dorthe

2016-08-01

The reminiscence bump is the disproportionate number of autobiographical memories dating from adolescence and early adulthood. It has often been ascribed to a consolidation of the mature self in the period covered by the bump. Here we stripped away factors relating to the characteristics of autobiographical memories per se, most notably factors that aid in their encoding or retention, by asking students to generate imagined word-cued and imagined 'most important' autobiographical memories of a hypothetical, prototypical 70-year-old of their own culture and gender. We compared the distribution of these fictional memories with the distributions of actual word-cued and most important autobiographical memories in a sample of 61-70-year-olds. We found a striking similarity between the temporal distributions of the imagined memories and the actual memories. These results suggest that the reminiscence bump is largely driven by constructive, schematic factors at retrieval, thereby challenging most existing theoretical accounts. Copyright © 2016 Elsevier Inc. All rights reserved.

Polarographic studies about indium (III) behaviour in aqueous media of sodium azide

International Nuclear Information System (INIS)

Tokoro, R.

1988-01-01

The present study shows some polarographic behavior of indium (III) in azide media that is close those observed in a thiocyanate solution. The presence of azide ligand decreases the overpotential in the discharge of indium whose catalytic character can be explained by formation of an azide bridge between electrode and indium (III) increasing the speed of electron transfer. The discharge of indium in azide media is diffusion controlled. As the azide concentration is increased the half wave potential displaces in the cathodic direction. This displacement is due to complex formation. The number of electrons, n, involved in the total process was estimates by the reversible polarographic equation to be 2,7. The potentiostatic coulometry of indium in azide/hydrazoic acid buffer showed a catalytic process where the chemistry regeneration was performed by reaction of hydrazoic acid and indium amalgam. The electrochemistry evidence was the constancy of current as the electrolysis proceeded. The chemistry aspect was the presence of ammonium cation in electrolysed solution. The catalytic process with chemistry regeneration and the formation of a bridge by azide could explain the higher value of current in azide media compared to perchlorate solution. (author) [pt

Copper-assisted shape control in colloidal synthesis of indium oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Selishcheva, Elena; Parisi, Juergen; Kolny-Olesiak, Joanna, E-mail: joanna.kolny@uni-oldenburg.de [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics (Germany)

2012-02-15

Indium oxide is an important n-type transparent semiconductor, finding application in solar cells, sensors, and optoelectronic devices. We present here a novel non-injection synthesis route for the preparation of colloidal indium oxide nanocrystals by using oleylamine (OLA) as ligand and as solvent. Indium oxide with cubic crystallographic structure is formed in a reaction between indium acetate and OLA, the latter is converted to oleylamide during the synthesis. The shape of the nanocrystals can be influenced by the addition of copper ions. When only indium (III) acetate is used as precursor flower-shaped indium oxide nanoparticles are obtained. Addition of copper salts such as copper (I) acetate, copper (II) acetate, copper (II) acetylacetonate, or copper (I) chloride, under otherwise identical reaction conditions changes the shape of nanoparticles to quasi-spherical or elongated. The anions, except for chloride, do not influence the shape of the resulting nanocrystals. This finding suggests that adsorption of copper ions on the In{sub 2}O{sub 3} surface during the nanoparticles growth is responsible for shape control, whereas changes in the reactivity of the In cations caused by the presence of different anions play a secondary role. X-ray diffraction, transmission electron microscopy, nuclear magnetic resonance, energy dispersive X-ray analysis, and UV-Vis-absorption spectroscopy are used to characterize the samples.

Copper-assisted shape control in colloidal synthesis of indium oxide nanoparticles

International Nuclear Information System (INIS)

Selishcheva, Elena; Parisi, Jürgen; Kolny-Olesiak, Joanna

2012-01-01

Indium oxide is an important n-type transparent semiconductor, finding application in solar cells, sensors, and optoelectronic devices. We present here a novel non-injection synthesis route for the preparation of colloidal indium oxide nanocrystals by using oleylamine (OLA) as ligand and as solvent. Indium oxide with cubic crystallographic structure is formed in a reaction between indium acetate and OLA, the latter is converted to oleylamide during the synthesis. The shape of the nanocrystals can be influenced by the addition of copper ions. When only indium (III) acetate is used as precursor flower-shaped indium oxide nanoparticles are obtained. Addition of copper salts such as copper (I) acetate, copper (II) acetate, copper (II) acetylacetonate, or copper (I) chloride, under otherwise identical reaction conditions changes the shape of nanoparticles to quasi-spherical or elongated. The anions, except for chloride, do not influence the shape of the resulting nanocrystals. This finding suggests that adsorption of copper ions on the In 2 O 3 surface during the nanoparticles growth is responsible for shape control, whereas changes in the reactivity of the In cations caused by the presence of different anions play a secondary role. X-ray diffraction, transmission electron microscopy, nuclear magnetic resonance, energy dispersive X-ray analysis, and UV–Vis-absorption spectroscopy are used to characterize the samples.

Selectivity enhancement of indium-doped SnO2 gas sensors

International Nuclear Information System (INIS)

Salehi, A.

2002-01-01

Indium doping was used to enhance the selectivity of SnO 2 gas sensor. Both indium-doped and undoped SnO 2 gas sensors fabricated with different deposition techniques were investigated. The changes in the sensitivity of the sensors caused by selective gases (hydrogen and wood smoke) ranging from 500 to 3000 ppm were measured at different temperatures from 50 to 300 deg. C. The sensitivity peaks of the samples exhibit different values for selective gases with a response time of approximately 0.5 s. Thermally evaporated indium-doped SnO 2 gas sensor shows a considerable increase in the sensitivity peak of 27% in response to wood smoke, whereas it shows a sensitivity peak of 7% to hydrogen. This is in contrast to the sputter deposited indium-doped SnO 2 gas sensor, which exhibits a much lower sensitivity peak of approximately 2% to hydrogen and wood smoke compared to undoped SnO 2 gas sensors fabricated by chemical vapor deposition and spray pyrolysis. Scanning electron microscopy shows that different deposition techniques result in different porosity of the films. It is observed that the thermally evaporated indium-doped SnO 2 gas sensor shows high porosity, while the sputtered sample exhibits almost no porosity

Indium determination by spectral overlappings of lines in atomic absorption spectrometry

International Nuclear Information System (INIS)

Gomez, J.J.; Huicque, L. d'; Garcia Vior, L.O.

1991-01-01

A molybdenum hollow-cathode lamp filled with neon can be used to determine indium. Characteristic concentration for this element is 4.5 mg/L in the 325 nm spectral region for the Mo(I) 325.621 nm line. In addition, values of 0.4 mg/L and 0.3 mg/L are obtained with the Mo(I) 410.215 nm and Ne(I) 451.151 nm lines, respectively. These spectral overlappings allow the determination of indium in silver-cadmium-indium alloys. (Author) [es

Pharmacokinetics of indium-111-labeled antimyosin monoclonal antibody in murine experimental viral myocarditis

International Nuclear Information System (INIS)

Yamada, T.; Matsumori, A.; Watanabe, Y.; Tamaki, N.; Yonekura, Y.; Endo, K.; Konishi, J.; Kawai, C.

1990-01-01

The pharmacokinetics of indium-111-labeled antimyosin monoclonal antibody Fab were investigated with use of murine experimental viral myocarditis as a model. The biodistribution of indium-111-labeled antimyosin antibody Fab on days 3, 5, 7, 14, 21 and 28 after encephalomyocarditis virus inoculation demonstrated that myocardial uptake increased significantly on days 5, 7 and 14 (maximum on day 7) in infected versus uninfected mice (p less than 0.001). In vivo kinetics in infected mice on day 7 demonstrated that the heart to blood ratio reached a maximum 48 h after the intravenous administration of indium-111-labeled antimyosin Fab, which was considered to be the optimal time for scintigraphy. The scintigraphic images obtained with indium-111-labeled antimyosin Fab demonstrated positive uptake in the cardiac lesion in infected mice. The pathologic study demonstrated that myocardial uptake correlated well with pathologic grades of myocardial necrosis. High performance liquid chromatography revealed the presence of an antigen-antibody complex in the circulation of infected mice after the injection of indium-111-labeled antimyosin Fab. This antigen bound to indium-111-labeled antimyosin Fab in the circulation might be whole myosin and this complex may decrease myocardial uptake and increase liver uptake. It is concluded that indium-111-labeled antimyosin monoclonal antibody Fab accumulates selectively in damaged heart tissue in mice with acute myocarditis and that indium-111-labeled antimyosin Fab scintigraphy may be a useful method for the visualization of acute myocarditis

Indium nanoparticles for ultraviolet surface-enhanced Raman spectroscopy

Science.gov (United States)

Das, Rupali; Soni, R. K.

2018-05-01

Ultraviolet Surface-enhanced Raman spectroscopy (UVSERS) has emerged as an efficient molecular spectroscopy technique for ultra-sensitive and ultra-low detection of analyte concentration. The generic SERS substrates based on gold and silver nanostructures have been extensively explored for high local electric field enhancement only in visible-NIR region of the electromagnetic spectrum. The template synthesis of controlled nanoscale size metallic nanostructures supporting localized surface plasmon resonance (LSPR) in the UV region have been recently explored due to their ease of synthesis and potential applications in optoelectronic, catalysis and magnetism. Indium (In0) nanoparticles exhibit active surface plasmon resonance (SPR) in ultraviolet (UV) and deep-ultaviolet (DUV) region with optimal absorption losses. This extended accessibility makes indium a promising material for UV plasmonic, chemical sensing and more recently in UV-SERS. In this work, spherical indium nanoparticles (In NPs) were synthesized by modified polyol reduction method using NaBH4 having local surface plasmon resonance near 280 nm. The as-synthesized spherical In0 nanoparticles were then coated with thin silica shells of thickness ˜ 5nm by a modified Stober method protecting the nanoparticles from agglomeration, direct contact with the probed molecules as well as prevent oxidation of the nanoparticles. Morphological evolution of In0 nanoparticles and SiO2 coating were characterized by transmission electron microscope (TEM). An enhanced near resonant shell-isolated SERS activity from thin film of tryptophan (Tryp) molecules deposited on indium coated substrates under 325nm UV excitation was observed. Finite difference time domain (FDTD) method is employed to comprehend the experimental results and simulate the electric field contours which showed amplified electromagnetic field localized around the nanostructures. The comprehensive analysis indicates that indium is a promising alternate

Acid-catalyzed kinetics of indium tin oxide etching

Energy Technology Data Exchange (ETDEWEB)

Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

2014-08-28

We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

Amperometric titration of indium with edta solution in propanol

International Nuclear Information System (INIS)

Gevorgyan, A.M.; Talipov, Sh.T.; Khadeev, V.A.; Kostylev, V.S.; Khadeeva, L.A.

1980-01-01

Optimum conditions have been chosen for titration of indium with EDTA solution in anhydrous propanol and its mixtures with some aprotic solvents using amperometric and point detection. A procedure is suggested of determining indium microcontents in the presence of large amounts of other elements. The procedure is based on its extraction preseparation followed by direct titration in the extract with a standard EDTA solution [ru

Regularly arranged indium islands on glass/molybdenum substrates upon femtosecond laser and physical vapor deposition processing

Energy Technology Data Exchange (ETDEWEB)

Ringleb, F.; Eylers, K.; Teubner, Th.; Boeck, T., E-mail: torsten.boeck@ikz-berlin.de [Leibniz-Institute for Crystal Growth, Max-Born-Straße 2, Berlin 12489 (Germany); Symietz, C.; Bonse, J.; Andree, S.; Krüger, J. [Bundesanstalt für Materialforschung und-prüfung (BAM), Unter den Eichen 87, Berlin 12205 (Germany); Heidmann, B.; Schmid, M. [Department of Physics, Freie Universität Berlin, Arnimalle 14, Berlin 14195 (Germany); Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Lux-Steiner, M. [Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Heterogeneous Material Systems, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany)

2016-03-14

A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass, which can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide used in photovoltaics. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.

Influence of nitrogen on magnetic properties of indium oxide

Science.gov (United States)

Ashok, Vishal Dev; De, S. K.

2013-07-01

Magnetic properties of indium oxide (In2O3) prepared by the decomposition of indium nitrate/indium hydroxide in the presence of ammonium chloride (NH4Cl) has been investigated. Structural and optical characterizations confirm that nitrogen is incorporated into In2O3. Magnetization has been convoluted to individual diamagnetic paramagnetic and ferromagnetic contributions with varying concentration of NH4Cl. Spin wave with diverging thermal exponent dominates in both field cool and zero field cool magnetizations. Uniaxial anisotropy plays an important role in magnetization as a function of magnetic field at higher concentration of NH4Cl. Avrami analysis indicates the absence of pinning effect in the magnetization process. Ferromagnetism has been interpreted in terms of local moments induced by anion dopant and strong hybridization with host cation.

Influence of nitrogen on magnetic properties of indium oxide

International Nuclear Information System (INIS)

Ashok, Vishal Dev; De, S K

2013-01-01

Magnetic properties of indium oxide (In 2 O 3 ) prepared by the decomposition of indium nitrate/indium hydroxide in the presence of ammonium chloride (NH 4 Cl) has been investigated. Structural and optical characterizations confirm that nitrogen is incorporated into In 2 O 3 . Magnetization has been convoluted to individual diamagnetic paramagnetic and ferromagnetic contributions with varying concentration of NH 4 Cl. Spin wave with diverging thermal exponent dominates in both field cool and zero field cool magnetizations. Uniaxial anisotropy plays an important role in magnetization as a function of magnetic field at higher concentration of NH 4 Cl. Avrami analysis indicates the absence of pinning effect in the magnetization process. Ferromagnetism has been interpreted in terms of local moments induced by anion dopant and strong hybridization with host cation. (paper)

Research on the effect of alkali roasting of copper dross on leaching rate of indium

Science.gov (United States)

Dafang, Liu; Fan, Xingxiang; Shi, Yifeng; Yang, Kunbin

2017-11-01

The byproduct copper dross produced during refining crude lead was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and fluorescence spectrometer (XRF), which showed that copper dross mainly contained lead, copper, zinc, arsenic, antimony, bismuth, sulfur and a small amount of indium and silver etc. The mineralogical phase change of oxidation roasting of copper dross by adding sodium hydroxide was analyzed with the help of XRD and SEM. The effects of water leaching, ratio of sodium hydroxide, roasting time, and roasting temperature on leaching rate of indium were investigated mainly. The experimental results showed that phase of lead metal and sulfides of lead, copper and zinc disappeared after oxidation roasting of copper dross by adding sodium hydroxide, new phase of oxides of lead, copper, zinc and sodium salt of arsenic and antimony appeared. Water leaching could remove arsenic, and acid leaching residue obtained was then leached with acid. The leaching rate of indium was higher 6.98% compared with alkali roasting of copper dross-acid leaching. It showed that removing arsenic by water leaching and acid leaching could increase the leaching rate of indium and be beneficial to reducing subsequent acid consumption of extracting indium by acid leaching. The roasting temperature had a significant effect on the leaching rate of indium, and leaching rate of indium increased with the rise of roasting temperature. When roasting temperature ranged from 450°C to 600°C, leaching rate of indium increased significantly with the rise of roasting temperature. When roasting temperature rose from 450°C to 600°C, leaching rate of indium increased by 60.29%. The amount of sodium hydroxide had an significant effect on the leaching rate of indium, and the leaching of indium increased with the increase of the amount of sodium hydroxide, and the leaching rate of indium was obviously higher than that of copper dross blank roasting and acid leaching.

Aluminium, gallium, indium and thallium

International Nuclear Information System (INIS)

Brown, Paul L.; Ekberg, Christian

2016-01-01

Aluminium can exist in a number of oxyhydroxide mineral phases including corundum, diaspore, boehmite and gibbsite. The stability constants at zero ionic strength reported for Al(OH) 3 (aq) vary linearly with respect to the inverse of absolute temperature. A full suite of thermodynamic parameters is available for all aluminium phases and hydrolysis species. Gallium hydrolyses to a greater extent than aluminium, with the onset of hydrolysis reactions occurring just above a pHof 1. In fact, even though aluminium has the smallest ionic radius of this series of metals, it has the weakest hydrolysis species and oxide/hydroxide phases.This is due to the presence of stabilising d-orbitals in the heavier metals, gallium, indium and thallium(III). There are few available data for the stability constants of indium(III) hydrolysis species. Of those that are available, the range in the proposed stability constants covers many orders of magnitude.

Effect of ion indium implantation on InP photoluminescence spectra

International Nuclear Information System (INIS)

Pyshnaya, N.B.; Radautsan, S.I.; Tiginyanu, I.M.; Ursaki, V.V.

1988-01-01

Photoluminescence spectra of indium phosphide single crystals implanted by indium after annealing under the protective Al 2 O 3 film in a nitrogen flow are investigated. As a result of implantation and annealing in photoluminescence spectra of crystals there appeared a new band with the maximum at 1.305 eV (T=6 K) which is connected with the free electron transition at the level of the antistructure defect of In p - lying by 0.115 eV above the valent zone ceiling. With large doses of the implanted indium in the photoluminescence spectrum a long-wave band with the maximum at 0.98-0.99 eV is also observed caused, apparently, by the strong lattice disorder

Short-range order in amorphous thin films of indium selenides

International Nuclear Information System (INIS)

Zakharov, V.P.; Poltavtsev, Yu.G.; Sheremet, G.P.

1982-01-01

A structure of the short-range order and a character of interatomic interactions in indium selenides Insub(1-x)Sesub(x) with 0.333 <= x <= 0.75, obtained in the form of amorphous films 0.05-0.80 μm thick are studied using electron diffraction method. It is found out that mostly tetrahedrical coordination of nearest neighbours in the vicinity of indium atoms is characteristic for studied amorphous films, and coordination of selenium atoms is different. Amorphous film with x=0.75 posesses a considereably microheterogeneous structure of the short-range order, which is characterized by the presence of microunclusions of amorphous selenium and atoms of indium, octohedrically coordinated by selenium atoms

Hydrothermal synthesis of two layered indium oxalates with 12-membered apertures

International Nuclear Information System (INIS)

Chen Zhenxia; Zhou Yaming; Weng Linhong; Zhang Haoyu; Zhao Dongyuan

2003-01-01

Two layered indium oxalates, In(C 2 O 4 ) 2.5 (C 3 N 2 H 12 )(H 2 O) 3 , I, and In(C 2 O 4 ) 1.5 (H 2 O) 3 , II, have been hydrothermally synthesized. In I, the linkage between indium and oxalate units gives rise to a sheet with a rectangular 12-membered aperture (six indium atoms and six oxalate units). Indium atom of II has an unusual pentagonal bipyramidal coordination arrangement. The connectivity between indium and oxalate units forms a neutral puckered layer with 12- (along a-axis) and eight-membered (along b-axis) apertures. Crystal data for these two indium oxalates are as follows: I, triclinic, space group: P-1 (No. 2), a=8.725(3) A, b=9.170(3) A, c=9.901(3) A, α=98.101(4) deg. , β=97.068(4) deg. , γ=102.403(4) deg. , V=756.3(4) A 3 , Z=2, M=463.0(5), ρ calc =2.042 g/cm 3 , R 1 =0.0377, wR 2 =0.0834. II, monoclinic, space group: P2 1 /c (No. 14), a=10.203(5) A, b=6.638(1) A, c=11.152(7) A, β=95.649(4) deg. , V=751.7(4)A 3 , Z=4, M=300.9(0), ρ calc =2.659 g/cm 3 , R 1 =0.0229, wR 2 =0.0488. TG analyses indicate the water molecules of I can be removed at 150 deg. C. The dehydrated product retains structural integrity

CO2laser-induced bump formation and growth on polystyrene for multi-depth soft lithography molds

KAUST Repository

Li, Huawei; Fan, Yiqiang; Conchouso Gonzalez, David; Foulds, Ian G.

2012-01-01

result from the net volume gain of the laser heat-affected zone on the PS rather than from a deposition process, and the expansion of the heat-affected zone on PS was verified by measuring the hardness change using nanoindentation. The bumps have a much

Highly conducting and transparent sprayed indium tin oxide

Energy Technology Data Exchange (ETDEWEB)

Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

1998-03-01

Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

Miniaturization of Micro-Solder Bumps and Effect of IMC on Stress Distribution

Science.gov (United States)

Choudhury, Soud Farhan; Ladani, Leila

2016-07-01

As the joints become smaller in more advanced packages and devices, intermetallic (IMCs) volume ratio increases, which significantly impacts the overall mechanical behavior of joints. The existence of only a few grains of Sn (Tin) and IMC materials results in anisotropic elastic and plastic behavior which is not detectable using conventional finite element (FE) simulation with average properties for polycrystalline material. In this study, crystal plasticity finite element (CPFE) simulation is used to model the whole joint including copper, Sn solder and Cu6Sn5 IMC material. Experimental lap-shear test results for solder joints from the literature were used to validate the models. A comparative analysis between traditional FE, CPFE and experiments was conducted. The CPFE model was able to correlate the experiments more closely compared to traditional FE analysis because of its ability to capture micro-mechanical anisotropic behavior. Further analysis was conducted to evaluate the effect of IMC thickness on stress distribution in micro-bumps using a systematic numerical experiment with IMC thickness ranging from 0% to 80%. The analysis was conducted on micro-bumps with single crystal Sn and bicrystal Sn. The overall stress distribution and shear deformation changes as the IMC thickness increases. The model with higher IMC thickness shows a stiffer shear response, and provides a higher shear yield strength.

Investigation Of The Effects Of Reflow Profile Parameters On Lead-free Solder Bump Volumes And Joint Integrity

Science.gov (United States)

Amalu, E. H.; Lui, Y. T.; Ekere, N. N.; Bhatti, R. S.; Takyi, G.

2011-01-01

The electronics manufacturing industry was quick to adopt and use the Surface Mount Technology (SMT) assembly technique on realization of its huge potentials in achieving smaller, lighter and low cost product implementations. Increasing global customer demand for miniaturized electronic products is a key driver in the design, development and wide application of high-density area array package format. Electronic components and their associated solder joints have reduced in size as the miniaturization trend in packaging continues to be challenged by printing through very small stencil apertures required for fine pitch flip-chip applications. At very narrow aperture sizes, solder paste rheology becomes crucial for consistent paste withdrawal. The deposition of consistent volume of solder from pad-to-pad is fundamental to minimizing surface mount assembly defects. This study investigates the relationship between volume of solder paste deposit (VSPD) and the volume of solder bump formed (VSBF) after reflow, and the effect of reflow profile parameters on lead-free solder bump formation and the associated solder joint integrity. The study uses a fractional factorial design (FFD) of 24-1 Ramp-Soak-Spike reflow profile, with all main effects and two-way interactions estimable to determine the optimal factorial combination. The results from the study show that the percentage change in the VSPD depends on the combination of the process parameters and reliability issues could become critical as the size of solder joints soldered on the same board assembly vary greatly. Mathematical models describe the relationships among VSPD, VSBF and theoretical volume of solder paste. Some factors have main effects across the volumes and a number of interactions exist among them. These results would be useful for R&D personnel in designing and implementing newer applications with finer-pitch interconnect.

IS THE LATE NEAR-INFRARED BUMP IN SHORT-HARD GRB 130603B DUE TO THE LI-PACZYNSKI KILONOVA?

International Nuclear Information System (INIS)

Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming; Xu, Dong; Wu, Xue-Feng

2013-01-01

Short-hard gamma-ray bursts (GRBs) are widely believed to be produced by the merger of two binary compact objects, specifically by two neutron stars or by a neutron star orbiting a black hole. According to the Li-Paczynski kilonova model, the merger would launch sub-relativistic ejecta and a near-infrared/optical transient would then occur, lasting up to days, which is powered by the radioactive decay of heavy elements synthesized in the ejecta. The detection of a late bump using the Hubble Space Telescope (HST) in the near-infrared afterglow light curve of the short-hard GRB 130603B is indeed consistent with such a model. However, as shown in this Letter, the limited HST near-infrared light curve behavior can also be interpreted as the synchrotron radiation of the external shock driven by a wide mildly relativistic outflow. In such a scenario, the radio emission is expected to peak with a flux of ∼100 μJy, which is detectable for current radio arrays. Hence, the radio afterglow data can provide complementary evidence on the nature of the bump in GRB 130603B. It is worth noting that good spectroscopy during the bump phase in short-hard bursts can test the validity of either model above, analogous to spectroscopy of broad-lined Type Ic supernova in long-soft GRBs

USING THE 1.6 μm BUMP TO STUDY REST-FRAME NEAR-INFRARED-SELECTED GALAXIES AT REDSHIFT 2

International Nuclear Information System (INIS)

Sorba, Robert; Sawicki, Marcin

2010-01-01

We explore the feasibility and limitations of using the 1.6 μm bump as a photometric redshift indicator and selection technique, and use it to study the rest-frame H-band galaxy luminosity and stellar mass functions (SMFs) at redshift z ∼ 2. We use publicly available Spitzer/IRAC images in the GOODS fields and find that color selection in the IRAC bandpasses alone is comparable in completeness and contamination to BzK selection. We find that the shape of the 1.6 μm bump is robust, and photometric redshifts are not greatly affected by choice of model parameters. Comparison with spectroscopic redshifts shows photometric redshifts to be reliable. We create a rest-frame NIR-selected catalog of galaxies at z ∼ 2 and construct a galaxy SMF. Comparisons with other SMFs at approximately the same redshift but determined using shorter wavelengths show good agreement. This agreement suggests that selection at bluer wavelengths does not miss a significant amount of stellar mass in passive galaxies. Comparison with SMFs at other redshifts shows evidence for the downsizing scenario of galaxy evolution. We conclude by pointing out the potential for using the 1.6 μm bump technique to select high-redshift galaxies with the JWST, whose λ>0.6 μm coverage will not be well suited to selecting galaxies using techniques that require imaging at shorter wavelengths.

Concerted Electrodeposition and Alloying of Antimony on Indium Electrodes for Selective Formation of Crystalline Indium Antimonide.

Science.gov (United States)

Fahrenkrug, Eli; Rafson, Jessica; Lancaster, Mitchell; Maldonado, Stephen

2017-09-19

The direct preparation of crystalline indium antimonide (InSb) by the electrodeposition of antimony (Sb) onto indium (In) working electrodes has been demonstrated. When Sb is electrodeposited from dilute aqueous electrolytes containing dissolved Sb 2 O 3 , an alloying reaction is possible between Sb and In if any surface oxide films are first thoroughly removed from the electrode. The presented Raman spectra detail the interplay between the formation of crystalline InSb and the accumulation of Sb as either amorphous or crystalline aggregates on the electrode surface as a function of time, temperature, potential, and electrolyte composition. Electron and optical microscopies confirm that under a range of conditions, the preparation of a uniform and phase-pure InSb film is possible. The cumulative results highlight this methodology as a simple yet potent strategy for the synthesis of intermetallic compounds of interest.

Properties of polycrystalline indium oxide in open air and in vacuum

International Nuclear Information System (INIS)

Solov'eva, A.E.; Zhdanov, V.A.; Markov, V.L.; Shvangiradze, R.R.

1982-01-01

Properties of polycrystalline indium oxide according to annealing temperature in open air and in vacuum are investigated. It is established that the indium oxide begins to change its chemical composition during the annealing in the open air from 1200 deg C, and in the vacuum - form 800 deg C. During the annealing of the samples in ths open air in the temperature range of 1200-1450 deg C the lattice of the indium oxide loses probably, only oxygen; this process is accompanied by change of the samples color, electrophysical properties, lattice parameter density. Cation sublattice is disturbed in the vacuum beginning from 900 deg C, which is accompanied by destruction of the color centers. X-ray density and the activation energy of the reduction accounting the formation of the color centers are calculated on the base of the X-ray data and the deviation from stoichiometry of the indium oxide depending on the annealing temperature in the open air

Evidence for atomic scale disorder in indium nitride from perturbed angular correlation spectroscopy

International Nuclear Information System (INIS)

Dogra, R; Shrestha, S K; Byrne, A P; Ridgway, M C; Edge, A V J; Vianden, R; Penner, J; Timmers, H

2005-01-01

The crystal lattice of bulk grains and state-of-the-art films of indium nitride was investigated at the atomic scale with perturbed angular correlation spectroscopy using the 111 In/Cd radioisotope probe. The probe was introduced during sample synthesis, by diffusion and by ion implantation. The mean quadrupole interaction frequency ν Q = 28 MHz was observed at the indium probe site in all types of indium nitride samples with broad frequency distributions. The observed small, but non-zero, asymmetry parameter indicates broken symmetry around the probe atoms. Results have been compared with theoretical calculations based on the point charge model. The consistency of the experimental results and their independence of the preparation technique suggest that the origin of the broad frequency distribution is inherent to indium nitride, indicating a high degree of disorder at the atomic scale. Due to the low dissociation temperature of indium nitride, furnace and rapid thermal annealing at atmospheric pressure reduce the lattice disorder only marginally

State of rare earth impurities in gallium and indium antimonides

International Nuclear Information System (INIS)

Evgen'ev, S.B.; Kuz'micheva, G.M.

1990-01-01

State of rare earth impurities in indium and gallium antimonides was studied. Results of measuring density and lattice parameter of samples in GaSb-rare earth and InSb-rare earth systems are presented. It is shown that during rare earth dissolution in indium and gallium antimonides rare earth atoms occupy interstitial positions or, at least, are displaced from lattice points

Indium antimonide nanowires arrays for promising thermoelectric converters

Directory of Open Access Journals (Sweden)

Gorokh G. G.

2015-02-01

Full Text Available The authors have theoretically substantiated the possibility to create promising thermoelectric converters based on quantum wires. The calculations have shown that the use of quantum wires with lateral dimensions smaller than quantum confinement values and high concentration and mobility of electrons, can lead to a substantial cooling of one of the contacts up to tens of degrees and to the heating of the other. The technological methods of manufacturing of indium antimonide nanowires arrays with high aspect ratio of the nanowire diameters to their length in the modified nanoporous anodic alumina matrixes were developed and tested. The microstructure and composition of the formed nanostructures were investigated. The electron microscopy allowed establishing that within each pore nanowires are formed with diameters of 35 nm and a length of 35 microns (equal to the matrix thickness. The electron probe x-ray microanalysis has shown that the atomic ratio of indium and antimony in the semiconductor nanostructures amounted to 38,26% and 61,74%, respectively. The current-voltage measurement between the upper and lower contacts of Cu/InSb/Cu structure (1 mm2 has shown that at 2.82 V negative voltage at the emitter contact, current density is 129,8 A/cм2, and the collector contact is heated up to 75 degrees during 150 sec. Thus, the experimental results confirmed the theoretical findings that the quantum wire systems can be used to create thermoelectric devices, which can be widely applied in electronics, in particular, for cooling integrated circuits (processors, thermal controlling of the electrical circuits by changing voltage value.

Determination of gold and indium in sea water by neutron activation analysis

International Nuclear Information System (INIS)

Tateno, Yukio; Ohta, Naoichi

1979-01-01

A combination of electrodeposition on graphite with neutron activation analysis was used for the determination of gold and indium in sea water. At a potential of -0.70 V vs. the silver-silver chloride electrode, gold and indium were electrolyzed on to a graphite electrode (1.1 cm phi x 0.2 cm) from 100 ml of 0.5 M sodium chloride. Recovery yield of gold was constant at pH from 1 to 3 and was independent of the initial concentration of gold, (0.01 -- 1) ppb. For a 72-h electrolysis at pH 2 the recovery yield of gold was 92%, while that of indium was 32%. The graphite electrode was exposed to a thermal neutron flux of 5.1 x 10 11 or 1.5 x 10 12 n cm -2 s -1 : 5 min exposure for indium and 6 to 12 h for gold. After appropriate decay periods the activities of 198 Au and sup(116m)In were measured for 2000 s and 300 s, respectively, with a 4000-channel pulse-height analyser and a Ge(Li) detector. The total amount of gold in 1 l of a sea water sample (Tokyo Bay) was (0.023 +- 0.001)μg, in which nonelectrolyzable gold was estimated to be 0.005 μg. Indium concentration in the sample was too low to be determined by the present method. Detection limit for indium was 1 ppb. (author)

3D-LSI technology for image sensor

International Nuclear Information System (INIS)

Motoyoshi, Makoto; Koyanagi, Mitsumasa

2009-01-01

Recently, the development of three-dimensional large-scale integration (3D-LSI) technologies has accelerated and has advanced from the research level or the limited production level to the investigation level, which might lead to mass production. By separating 3D-LSI technology into elementary technologies such as (1) through silicon via (TSV) formation, (2) bump formation, (3) wafer thinning, (4) chip/wafer alignment, and (5) chip/wafer stacking and reconstructing the entire process and structure, many methods to realize 3D-LSI devices can be developed. However, by considering a specific application, the supply chain of base wafers, and the purpose of 3D integration, a few suitable combinations can be identified. In this paper, we focus on the application of 3D-LSI technologies to image sensors. We describe the process and structure of the chip size package (CSP), developed on the basis of current and advanced 3D-LSI technologies, to be used in CMOS image sensors. Using the current LSI technologies, CSPs for 1.3 M, 2 M, and 5 M pixel CMOS image sensors were successfully fabricated without any performance degradation. 3D-LSI devices can be potentially employed in high-performance focal-plane-array image sensors. We propose a high-speed image sensor with an optical fill factor of 100% to be developed using next-generation 3D-LSI technology and fabricated using micro(μ)-bumps and micro(μ)-TSVs.

Plasma Treatment to Remove Carbon from Indium UV Filters

Science.gov (United States)

Greer, Harold F.; Nikzad, Shouleh; Beasley, Matthew; Gantner, Brennan

2012-01-01

The sounding rocket experiment FIRE (Far-ultraviolet Imaging Rocket Experiment) will improve the science community fs ability to image a spectral region hitherto unexplored astronomically. The imaging band of FIRE (.900 to 1,100 Angstroms) will help fill the current wavelength imaging observation hole existing from approximately equal to 620 Angstroms to the GALEX band near 1,350 Angstroms. FIRE is a single-optic prime focus telescope with a 1.75-m focal length. The bandpass of 900 to 1100 Angstroms is set by a combination of the mirror coating, the indium filter in front of the detector, and the salt coating on the front of the detector fs microchannel plates. Critical to this is the indium filter that must reduce the flux from Lymanalpha at 1,216 Angstroms by a minimum factor of 10(exp -4). The cost of this Lyman-alpha removal is that the filter is not fully transparent at the desired wavelengths of 900 to 1,100 Angstroms. Recently, in a project to improve the performance of optical and solar blind detectors, JPL developed a plasma process capable of removing carbon contamination from indium metal. In this work, a low-power, low-temperature hydrogen plasma reacts with the carbon contaminants in the indium to form methane, but leaves the indium metal surface undisturbed. This process was recently tested in a proof-of-concept experiment with a filter provided by the University of Colorado. This initial test on a test filter showed improvement in transmission from 7 to 9 percent near 900 with no process optimization applied. Further improvements in this performance were readily achieved to bring the total transmission to 12% with optimization to JPL's existing process.

Different magnetic properties of rhombohedral and cubic Ni2+ doped indium oxide nanomaterials

Directory of Open Access Journals (Sweden)

Qingbo Sun

2011-12-01

Full Text Available Transition metal ions doped indium oxide nanomaterials were potentially used as a kind of diluted magnetic semiconductors in transparent spintronic devices. In this paper, the influences of Ni2+ doped contents and rhombohedral or cubic crystalline structures of indium oxide on magnetic properties were investigated. We found that the magnetic properties of Ni2+ doped indium oxide could be transferred from room temperature ferromagnetisms to paramagnetic properties with increments of doped contents. Moreover, the different crystalline structures of indium oxide also greatly affected the room temperature ferromagnetisms due to different lattice constants and almost had no effects on their paramagnetic properties. In addition, both the ferromagnetic and paramagnetic properties were demonstrated to be intrinsic and not caused by impurities.

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

Science.gov (United States)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

Indium oxide octahedrons based on sol–gel process enhance room temperature gas sensing performance

Energy Technology Data Exchange (ETDEWEB)

Mu, Xiaohui [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China); Chen, Changlong, E-mail: chem.chencl@hotmail.com [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China); Han, Liuyuan [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China); Shao, Baiqi [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Wei, Yuling [Instrumental Analysis Center, Qilu University of Technology, Jinan 250353, Shandong (China); Liu, Qinglong; Zhu, Peihua [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China)

2015-07-15

Highlights: • In{sub 2}O{sub 3} octahedron films are prepared based on sol–gel technique for the first time. • The preparation possesses merits of low temperature, catalyst-free and large production. • It was found that the spin-coating process in film fabrication was key to achieve the octahedrons. • The In{sub 2}O{sub 3} octahedrons could significantly enhance room temperature NO{sub 2} gas sensing performance. - Abstract: Indium oxide octahedrons were prepared on glass substrates through a mild route based on sol–gel technique. The preparation possesses characteristics including low temperature, catalyst-free and large production, which is much distinguished from the chemical-vapor-deposition based methods that usually applied to prepare indium oxide octahedrons. Detailed characterization revealed that the indium oxide octahedrons were single crystalline, with {1 1 1} crystal facets exposed. It was found that the spin-coating technique was key for achieving the indium oxide crystals with octahedron morphology. The probable formation mechanism of the indium oxide octahedrons was proposed based on the experiment results. Room temperature NO{sub 2} gas sensing measurements exhibited that the indium oxide octahedrons could significantly enhance the sensing performance in comparison with the plate-like indium oxide particles that prepared from the dip-coated gel films, which was attributed to the abundant sharp edges and tips as well as the special {1 1 1} crystal facets exposed that the former possessed. Such a simple wet-chemical based method to prepare indium oxide octahedrons with large-scale production is promising to provide the advanced materials that can be applied in wide fields like gas sensing, solar energy conversion, field emission, and so on.

Indium oxide octahedrons based on sol–gel process enhance room temperature gas sensing performance

International Nuclear Information System (INIS)

Mu, Xiaohui; Chen, Changlong; Han, Liuyuan; Shao, Baiqi; Wei, Yuling; Liu, Qinglong; Zhu, Peihua

2015-01-01

Highlights: • In 2 O 3 octahedron films are prepared based on sol–gel technique for the first time. • The preparation possesses merits of low temperature, catalyst-free and large production. • It was found that the spin-coating process in film fabrication was key to achieve the octahedrons. • The In 2 O 3 octahedrons could significantly enhance room temperature NO 2 gas sensing performance. - Abstract: Indium oxide octahedrons were prepared on glass substrates through a mild route based on sol–gel technique. The preparation possesses characteristics including low temperature, catalyst-free and large production, which is much distinguished from the chemical-vapor-deposition based methods that usually applied to prepare indium oxide octahedrons. Detailed characterization revealed that the indium oxide octahedrons were single crystalline, with {1 1 1} crystal facets exposed. It was found that the spin-coating technique was key for achieving the indium oxide crystals with octahedron morphology. The probable formation mechanism of the indium oxide octahedrons was proposed based on the experiment results. Room temperature NO 2 gas sensing measurements exhibited that the indium oxide octahedrons could significantly enhance the sensing performance in comparison with the plate-like indium oxide particles that prepared from the dip-coated gel films, which was attributed to the abundant sharp edges and tips as well as the special {1 1 1} crystal facets exposed that the former possessed. Such a simple wet-chemical based method to prepare indium oxide octahedrons with large-scale production is promising to provide the advanced materials that can be applied in wide fields like gas sensing, solar energy conversion, field emission, and so on

Thermopower of dilute alloys of indium

International Nuclear Information System (INIS)

Dudenhoeffer, A.W.

1974-01-01

An experimental investigation of a new theory of electron-diffusion thermopower is discussed. A figure of merit for this ''Nielsen--Taylor'' theory in various metals is established, and it indicates that the effect should be largest in lead, indium, thallium, and aluminum, in that order. Previous investigations have been carried out for lead and aluminum. The thermopower of indium (or any metal) changes when impurity scattering centers are introduced into it. This change in the thermopower as a function of temperature is analyzed in terms of the Nielsen--Taylor theory and in terms of the competing process known as ''phonon drag.'' Definite conclusions as to the validity of the new theory are hampered by the complex nature of this phonon drag, but the experimental data is consistent with the Nielsen--Taylor theory. (Diss. Abstr. Int., B)

Discovery of the calcium, indium, tin, and platinum isotopes

International Nuclear Information System (INIS)

Amos, S.; Gross, J.L.; Thoennessen, M.

2011-01-01

Currently, twenty-four calcium, thirty-eight indium, thirty-eight tin, and thirty-nine platinum isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented. - Highlights: Documentation of the discovery of all calcium, indium, tin and platinum isotopes. → Summary of author, journal, year, place and country of discovery for each isotope. → Brief description of discovery history of each isotope.

Temporal distribution of autobiographical memory: uncovering the reminiscence bump in Japanese young and middle-aged adults

NARCIS (Netherlands)

Kawasaki, Y.; Janssen, S.M.J.; Inoue, T.

2011-01-01

The reminiscence bump is the effect that people recall more personal events from their teenage period than from adjacent lifetime periods. The effect is generally found in studies that divide the results of participants, who were at least 40 years old, into age bins of 10 years. In this study, the

Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

Science.gov (United States)

Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

2018-01-01

The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

Effect of indium addition in U-Zr metallic fuel on lanthanide migration

Energy Technology Data Exchange (ETDEWEB)

Kim, Yeon Soo, E-mail: yskim@anl.gov [Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439 (United States); Wiencek, T.; O' Hare, E.; Fortner, J.; Wright, A. [Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439 (United States); Cheon, J.S.; Lee, B.O. [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of)

2017-02-15

Advanced fast reactor concepts to achieve ultra-high burnup (∼50%) require prevention of fuel-cladding chemical interaction (FCCI). Fission product lanthanide accumulation at high burnup is substantial and significantly contributes to FCCI upon migration to the cladding interface. Diffusion barriers are typically used to prevent interaction of the lanthanides with the cladding. A more active method has been proposed which immobilizes the lanthanides through formation of stable compounds with an additive. Theoretical analysis showed that indium, thallium, and antimony are good candidates. Indium was the strongest candidate because of its low reactivity with iron-based cladding alloys. Characterization of the as-fabricated alloys was performed to determine the effectiveness of the indium addition in forming compounds with lanthanides, represented by cerium. Tests to examine how effectively the dopant prevents lanthanide migration under a thermal gradient were also performed. The results showed that indium effectively prevented cerium migration.

Effect of indium addition in U-Zr metallic fuel on lanthanide migration

Energy Technology Data Exchange (ETDEWEB)

Kim, Yeon Soo; Wiencek, T.; O' Hare, E.; Fortner, J.; Wright, A.; Cheon, J. S.; Lee, B. O.

2017-02-01

Advanced fast reactor concepts to achieve ultra-high burnup (~50%) require prevention of fuel-cladding chemical interaction (FCCI). Fission product lanthanide accumulation at high burnup is substantial and significantly contributes to FCCI upon migration to the cladding interface. Diffusion barriers are typically used to prevent interaction of the lanthanides with the cladding. A more active method has been proposed which immobilizes the lanthanides through formation of stable compounds with an additive. Theoretical analysis showed that indium, thallium, and antimony are good candidates. Indium was the strongest candidate because of its low reactivity with iron-based cladding alloys. Characterization of the as-fabricated alloys was performed to determine the effectiveness of the indium addition in forming compounds with lanthanides, represented by cerium. Tests to examine how effectively the dopant prevents lanthanide migration under a thermal gradient were also performed. The results showed that indium effectively prevented cerium migration.

Polyol-mediated synthesis of copper indium sulphide by solvothermal process

International Nuclear Information System (INIS)

Gorai, S.; Chaudhuri, S.

2005-01-01

A simple polyol-mediated solvothermal method has been proposed to synthesize copper indium sulphide. XRD studies reveal that the products are well crystallized. SEM indicates rod-like (with different aspect ratio) and star-shaped flake-like morphology of the products. The products are also characterized by optical studies and compositional analysis (XRF). XRF results show the formation of stoichiometric and non-stoichiometric copper indium sulphides depending on the reaction conditions

Enhanced photocatalytic activity of titania with unique surface indium and boron species

Science.gov (United States)

Yu, Yanlong; Wang, Enjun; Yuan, Jixiang; Cao, Yaan

2013-05-01

Indium and boron co-doped TiO2 photocatalysts were prepared by a sol-gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV-vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO2 in interstitial mode, while indium is present as unique chemical species of O-In-Clx (x = 1 or 2) on the surface. Compared with pure TiO2, the narrowness of band gap of TiO2 doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O-In-Clx (x = 1 or 2) and B2O3 species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO2 showed the much higher photocatalytic activities than pure TiO2, boron doped TiO2 (TiO2-B) and indium doped TiO2 (TiO2-In) under visible and UV light irradiation.

Effect of Joint Scale and Processing on the Fracture of Sn-3Ag-0.5Cu Solder Joints: Application to Micro-bumps in 3D Packages

Science.gov (United States)

Talebanpour, B.; Huang, Z.; Chen, Z.; Dutta, I.

2016-01-01

In 3-dimensional (3D) packages, a stack of dies is vertically connected to each other using through-silicon vias and very thin solder micro-bumps. The thinness of the micro-bumps results in joints with a very high volumetric proportion of intermetallic compounds (IMCs), rendering them much more brittle compared to conventional joints. Because of this, the reliability of micro-bumps, and the dependence thereof on the proportion of IMC in the joint, is of substantial concern. In this paper, the growth kinetics of IMCs in thin Sn-3Ag-0.5Cu joints attached to Cu substrates were analyzed, and empirical kinetic laws for the growth of Cu6Sn5 and Cu3Sn in thin joints were obtained. Modified compact mixed mode fracture mechanics samples, with adhesive solder joints between massive Cu substrates, having similar thickness and IMC content as actual micro-bumps, were produced. The effects of IMC proportion and strain rate on fracture toughness and mechanisms were investigated. It was found that the fracture toughness G C decreased with decreasing joint thickness ( h Joint). In addition, the fracture toughness decreased with increasing strain rate. Aging also promoted alternation of the crack path between the two joint-substrate interfaces, possibly proffering a mechanism to enhance fracture toughness.

Calibration of differential scanning calorimeters: A comparison between indium and diphenylacetic acid

International Nuclear Information System (INIS)

Charsley, E.L.; Laye, P.G.; Markham, H.M.; Le Goff, T.

2010-01-01

The close proximity in melting temperature of the LGC Limited DSC standards indium and diphenylacetic acid, has enabled a direct assessment to be made of any differences resulting from the use of a metal or an organic compound in the calibration of DSC equipment. Following calibration with indium, the equilibrium fusion temperatures for diphenylacetic acid, were determined by both the stepwise heating and extrapolation to zero heating rate methods. The results were in excellent agreement with the certificate values and established that indium may be used as a calibrant when making accurate DSC measurements on organic materials in the same temperature range and that it has the advantage that it is non-volatile and can be used a number of times without significant change. Similar agreement was obtained in the measurement of the enthalpy of fusion, although the larger heat capacity change on fusion of diphenylacetic acid resulted in a greater uncertainty than with indium.

Interaction of cadmium and indium nitrate mixture with sodium tungstate in aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Belousova, E E; Krivobok, V I; Gruba, A I [Donetskij Gosudarstvennyj Univ. (Ukrainian SSR)

1982-01-01

The interaction of the mixture of cadmium and indium nitrates with sodium tungstate in aqueous solution is studied using the methods of ''residual concentrations'', pH potentiometry and conductometry. Independent of the ratio of components in the initial solution a mixture of coprecipitated normal tungstates of cadmium and indium is formed in the system. Heat treatment of the precipitates at 800 deg C for 50 hrs with subsequent hardening results in the formation of solid solutions on the basis of normal cadmium and indium tungstates.

Electronic and chemical properties of barium and indium clusters

International Nuclear Information System (INIS)

Onwuagba, B.N.

1992-11-01

The ground state electronic and chemical properties of divalent barium and trivalent indium are investigated in a self-consistent manner using the spin-polarized local density approximation in the framework of Density Functional Theory. A jellium model is adopted in the spirit of Gunnarsson and Lundqvist exchange and correlation energies and the calculated properties primarily associated with the s-p orbitals in barium and p orbitals in indium provide deepened insight towards the understanding of the mechanisms to the magic numbers in both clusters. (author). 21 refs, 5 figs

Activation analysis of indium used as tracer in hydrogeology

International Nuclear Information System (INIS)

Stanescu, S.P.; Farcasiu, O.M.; Gaspar, E.; Spiridon, S.; Nazarov, V.M.; Frontasieva, M.V.

1985-01-01

About 2500 samples of 18 hydro-karstic structures from Romania have been analyzed. The water flow rates were in the range of 0.05 to 2.7 m 3 /s and transit time values were from 30 h to 200 days. The quantity of indium used for a labelling was a calculated function of the emergency flow rate and the estimated transit time and varied from 1 to 100 g. The results prove that the activation analysis of indium in water samples combined with preconcentration by coprecipitation is an useful method in hydrogeological studies

Effect of Indium Doping on the Sensitivity of SnO2 Gas Sensor

International Nuclear Information System (INIS)

Suharni; Sayono

2009-01-01

The dependence of sensitivity f SnO 2 gas sensors on indium concentration has been studied. Undoped and indium-doped SnO 2 gas sensors have been prepared by DC sputtering technique with following parameters i.e : electrode voltage of 3 kV, current 20 mA, vacuum pressure 1.8 × 10 -1 torr, deposition time 60 minutes and temperature of 200℃. The effect of weight variations of indium in order of 0.0370; 0.0485 and 0.0702 grams into SnO 2 thin film gas sensor for optimum result were investigated. The measurement of resistance, sensitivity and response time for various temperature for detecting of carbon monoxide (CO), Ammonia (NH 3 ) and acetone (CH 3 COCH 3 ) gas for indium doped has been done. From the analysis result shows that for indium doped 0.0702 g on the SnO 2 the resistance can be decreased from 832.0 kΩ to 3.9 kΩ and the operating temperature from 200℃ to 90℃ and improving the sensitivity from 15.92% to 40.09% and a response time from 30 seconds to 10 seconds for CO. (author)

Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

International Nuclear Information System (INIS)

Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

2008-01-01

Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

Evaluation of indium-111 colloid for radionuclide imaging of the abdominal lymph nodes

International Nuclear Information System (INIS)

Vieras, F.; Hamilton, R.F.; Grissom, M.P.; Kiepffer, R.F.; Vandergrift, J.F.

1981-01-01

The experimental evaluation of indium-111 colloid for imaging the para-aortic lymph nodes in animals is described and preliminary results obtained in human subjects. Serial lymphatic scintigraphy performed in beagle dogs following bilateral pedal subcutaneous injections of indium-111 colloid revealed good para-aortic lymph node visualization. A normal migration pattern of indium-111 colloid was also observed in human subjects following subcutaneous injection in the feet; there was clear visualization of the ileo-inguinal and para-aortic lymph nodes. Organ distribution studies for indium-111 colloid were performed in rats following unilateral pedal subcutaneous injection in rats; these results were used for calculating radiation dose estimates to various organs. The study demonstrates the feasibility of using 111 In-colloid clinically for abdominal lymphatic scintiography for the use of sup(99m)Tc-labelled colloids results in lower radiation doses. (U.K.)

Gas chromatography of indium in macroscopic and carrier-free amounts using quartz and gold as stationary phases

Energy Technology Data Exchange (ETDEWEB)

Serov, A.; Eichler, R.; Tuerler, A.; Wittwer, D.; Gaeggeler, H.W. [Paul Scherrer Inst. (PSI), Villigen (Switzerland). Lab. fuer Radiochemie und Umweltchemie; Bern Univ. (Switzerland). Dept. fuer Chemie und Biochemie; Dressler, R.; Piguet, D.; Voegele, A. [Paul Scherrer Inst. (PSI), Villigen (Switzerland). Lab. fuer Radiochemie und Umweltchemie

2011-07-01

The chemical investigation of E113 is likely to become soon feasible. The determination of chemical properties of carrier-free amounts of the lighter homologues of element 113, especially indium and thallium, allows designing experimental set-ups and selecting experimental conditions suitable for performing these studies. Here, we present investigations of the interaction of indium species with quartz and gold surfaces. Deposition temperatures as well as enthalpies of adsorption were determined for indium T{sub dep} = 739 {+-} 20 C (-{delta}H{sub ads}(In) = 227 {+-} 10 kJ mol{sup -1}) and for indium hydroxide T{sub dep} = 250 {+-} 20 C (-{delta}H{sub ads}(InOH)= 124 {+-}10 kJ mol{sup -1}) respectively, on quartz. In case of adsorption of indium on a gold surface only a lower limit of the deposition temperature was established T{sub dep} > 980 C (-{delta}H{sub ads}(In) {>=} 315 {+-} 10 kJ mol{sup -1}). Investigations of macroscopic amounts of indium in thermosublimation experiments at similar experimental conditions were instrumental to establish a tentative speciation of the observed indium species. (orig.)

Tin–indium/graphene with enhanced initial coulombic efficiency and rate performance for lithium ion batteries

International Nuclear Information System (INIS)

Yang, Hongxun; Li, Ling

2014-01-01

Graphical abstract: -- Highlights: • Tin–indium/graphene hybrid was firstly synthesized. • Indium in the hybrid reduces charge transfer resistance of electrode. • Graphene can accommodate the volume change of nanoparticles during cycling. • Tin–indium/graphene hybrid shows enhanced initial coulombic efficiency. • Tin–indium/graphene hybrid shows enhanced rate capability. -- Abstract: Tin is an attractive anode material replacing the current commercial graphite for the next generation lithium ion batteries because of its high theoretical storage capacity and energy density. However, poor capacity retention caused by large volume changes during cycling, and low rate capability frustrate its practical application. In this study, a new ternary composite based on tin–indium alloy (Sn–In) and graphene nanosheet (GNS) was prepared via a facile solvothermal synthesis followed by thermal treatment in hydrogen and argon at 550 °C. Characterizations show that the tin–indium nanoparticles with about 100 nm in size were wrapped between the graphene nanosheets. As an anode for lithium ion batteries, the Sn–In/GNS composite exhibits a remarkably improved electrochemical performance in terms of lithium storage capacity (865.6 mAh g −1 at 100 mA g −1 rate), initial coulombic efficiency (78.6%), cycling stability (83.9% capacity retention after 50 cycles), and rate capability (493.2 mAh g −1 at 600 mA g −1 rate after 25 cycles) compared to Sn/GNS and Sn–In electrode. This improvement is attributed to the introduction of lithium activity metal, indium, which reduces the charge transfer resistance of electrode, and the graphene nanosheet which accommodates the volume change of tin–indium nanoparticles during cycling and improves electrical conductivity of material

Template synthesis of indium nanowires using anodic aluminum oxide membranes.

Science.gov (United States)

Chen, Feng; Kitai, Adrian H

2008-09-01

Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

Enhanced photocatalytic activity of titania with unique surface indium and boron species

International Nuclear Information System (INIS)

Yu, Yanlong; Wang, Enjun; Yuan, Jixiang; Cao, Yaan

2013-01-01

Indium and boron co-doped TiO 2 photocatalysts were prepared by a sol–gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV–vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO 2 in interstitial mode, while indium is present as unique chemical species of O–In–Cl x (x = 1 or 2) on the surface. Compared with pure TiO 2 , the narrowness of band gap of TiO 2 doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O–In–Cl x (x = 1 or 2) and B 2 O 3 species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO 2 showed the much higher photocatalytic activities than pure TiO 2 , boron doped TiO 2 (TiO 2 –B) and indium doped TiO 2 (TiO 2 –In) under visible and UV light irradiation.

Indium oxide inverse opal films synthesized by structure replication method

Science.gov (United States)

Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

2016-04-01

We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

Quantitative STEM on indium containing group III-V semiconductor nanostructures

International Nuclear Information System (INIS)

Mehrtens, Thorsten

2013-01-01

In the framework of this thesis. a method for compositional analysis of semiconductor nanostructures is applied on technologically relevant group III-V alloys. It is based on a quantitative comparison between intensities of experimentally acquired High-Angle Annular Dark Field Scanning Tansmission Electron Microscopy (HAADF-STEM) images and simulated intensities from multislice calculations in the frozen lattice approach. The demonstrated method allows determination of specimen thickness and material composition on subnanometer scale. Since quantitative HAADF-STEM is still a very young technique, its applicability has only been proven for a few materials, yet. Thus, the main goal of this thesis is the simulation of suitable reference datasets for different ternary semiconducting alloys and to test their reliability by complementary analysis. A total of three different semiconducting materials are thereby analyzed (InGaN, InGaAs and InAlN) that have all in common that they contain indium. The main focus of this work lies on InGaN which is due to its bandgap particularly suitable for the fabrication of optoelectronic devices operating in the visible spectrum of the light. In the first part of the presented results, the quality of ultra-thin TEM-specimens prepared by techniques involving ion milling at high energies is optimized. This is done by an additional ion milling step where the impinging ions possess an energy of only 400 eV. It is found that the preparation induced amorphous surface layer that occurs during ion milling can be drastically reduced below 1 nm. The second part concentrates on results obtained on InGaN. Here, different simulations in the frozen lattice approach are carried out under certain conditions. These simulations either include or do not include thermal diffuse scattering and/or static atomic displacement to demonstrate their influence on the amount of intensity measured in the experiment. As the consideration of thermal diffuse scattering

Annealing of defects in indium antimonide after ion bombardment

International Nuclear Information System (INIS)

Bogatyrev, V.A.; Kachurin, G.A.

1977-01-01

Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

The steady-state and time-resolved photophysical properties of a dimeric indium phthalocyanine complex

International Nuclear Information System (INIS)

Chen Yu; Araki, Yasuyuki; Dini, Danilo; Liu Ying; Ito, Osamu; Fujitsuka, Mamoru

2006-01-01

The steady-state and time-resolved photophysical properties and some molecular orbital calculation results of a dimeric indium phthalocyanine complex with an indium-indium bond, i.e., [tBu 4 PcIn] 2 .2tmed, have been described. The results regarding triplet excited state lifetimes can be ascribed to strong intramolecular interactions existing only in the excited state of this dimer because no significant difference in the absorption spectra of the tBu 4 PcInCl monomer and the [tBu 4 PcIn] 2 .2tmed dimer is observed, suggesting that no ground-state interaction can be assessed. The deactivation processes of the excited singlet state of [tBu 4 PcIn] 2 .2tmed are apparently faster than that of μ-oxo-bridged PcIn dimer [tBu 4 PcIn] 2 O. Molecular orbital calculation on the PcIn dimer shows no node between two indium atoms was found in the HOMO - 2 of the PcIn-InPc dimer, suggesting that bonding electrons distribute between two indium atoms

NOAA TIFF Image - 50m Rugosity, Charleston Bump - Deep Coral Priority Areas - Whiting - (2001), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 50x50 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

NOAA TIFF Image - 50m Rugosity, Charleston Bump - Deep Coral Priority Areas - Whiting - (2000), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 50x50 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

Science.gov (United States)

Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

2010-08-01

Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

A Solid-Contact Indium(III) Sensor based on a Thiosulfinate Ionophore Derived from Omeprazole

Energy Technology Data Exchange (ETDEWEB)

Abbas, Mohammad Nooredeen; Hend Samy Amer [National Research Centre, Cairo (Egypt)

2013-04-15

A novel solid-contact indium(III)-selective sensor based on bis-(1H-benzimidazole-5-methoxy-2-[(4-methoxy-3, 5-dimethyl-1-pyridinyl) 2-methyl]) thiosulfinate, known as an omeprazole dimer (OD) and a neutral ionophore, was constructed, and its performance characteristics were evaluated. The sensor was prepared by applying a membrane cocktail containing the ionophore to a graphite rod pre-coated with polyethylene dioxythiophene (PEDOT) conducting polymer as the ion-to-electron transducer. The membrane contained 3.6% OD, 2.3% oleic acid (OA) and 62% dioctyl phthalate (DOP) as the solvent mediator in PVC and produced a good potentiometric response to indium(III) ions with a Nernstian slope of 19.09 mV/decade. The constructed sensor possessed a linear concentration range from 3 Χ 10{sup -7} to 1 Χ 10{sup -2} M and a lower detection limit (LDL) of 1 Χ 10{sup -7} M indium(III) over a pH range of 4.0-7.0. It also displayed a fast response time and good selectivity for indium(III) over several other ions. The sensor can be used for longer than three months without any considerable divergence in potential. The sensor was utilized for direct and flow injection potentiometric (FIP) determination of indium(III) in alloys. The parameters that control the flow injection method were optimized. Indium(III) was quantitatively recovered, and the results agreed with those obtained using atomic absorption spectrophotometry, as confirmed by the f and t values. The sensor was also utilized as an indicator electrode for the potentiometric titration of fluoride in the presence of chloride, bromide, iodide and thiocyanate ions using indium(III) nitrate as the titrant.

Effect of solder bump size on interfacial reactions during soldering between Pb-free solder and Cu and Ni/ Pd/ Au surface finishes

International Nuclear Information System (INIS)

NorAkmal, F.; Ourdjini, A.; Azmah Hanim, M.A.; Siti Aisha, I.; Chin, Y.T.

2007-01-01

Flip chip technology provides the ultimate in high I/ O-density and count with superior electrical performance for interconnecting electronic components. Therefore, the study of the intermetallic compounds was conducted to investigate the effect of solder bumps sizes on several surface finishes which are copper and Electroless Nickel/ Electroless Palladium/ Immersion Gold (ENEPIG) which is widely used in electronics packaging as surface finish for flip-chip application nowadays. In this research, field emission scanning electron microscopy (FESEM) analysis was conducted to analyze the morphology and composition of intermetallic compounds (IMCs) formed at the interface between the solder and UBM. The IMCs between the SAC lead-free solder with Cu surface finish after reflow were mainly (Cu, Ni) 6 Sn 5 and Cu 6 Sn 5 . While the main IMCs formed between lead-free solder on ENEPIG surface finish are (Ni, Cu) 3 Sn 4 and Ni 3 Sn 4 . The results from FESEM with energy dispersive x-ray (EDX) have revealed that isothermal aging at 150 degree Celsius has caused the thickening and coarsening of IMCs as well as changing them into more spherical shape. The thickness of the intermetallic compounds in both finishes investigated was found to be higher in solders with smaller bump size. From the experimental results, it also appears that the growth rate of IMCs is higher when soldering on copper compared to ENEPIG finish. Besides that, the results also showed that the thickness of intermetallic compounds was found to be proportional to isothermal aging duration. (author)

On the impact of indium distribution on the electronic properties in InGaN nanodisks

KAUST Repository

Benaissa, M.

2015-03-09

We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations - plasmons - at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening. In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.

On the impact of indium distribution on the electronic properties in InGaN nanodisks

KAUST Repository

Benaissa, M.; Sigle, W.; Ng, Tien Khee; El Bouayadi, R.; van Aken, P. A.; Jahangir, S.; Bhattacharya, P.; Ooi, Boon S.

2015-01-01

We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations - plasmons - at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening. In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.

Limit cycle behaviour of the bump-on-tail and ion-acoustic instability

International Nuclear Information System (INIS)

Janssen, P.A.E.M.; Rasmussen, J.J.

1980-12-01

The nonlinear dynamics of the bump-on-tail and current-driven ion-acoustic instability is considered. The eigenmodes have discrete k because of finite periodic boundary conditions. Increasing a critical parameter (the number density and the electron drift velocity respectively) above its neutral stable value by a small fractional amount Δ 2 , one mode becomes unstable. The nonlinear dynamics of the unstable mode is determined by means of the multiple time scale method. Usually, limit cycle behaviour is found. A short comparison with quasi-linear theory is given, and the results are compared with experiment. (Auth.)

Neutron Imaging with Timepix Coupled Lithium Indium Diselenide

Directory of Open Access Journals (Sweden)

Elan Herrera

2017-12-01

Full Text Available The material lithium indium diselenide, a single crystal neutron sensitive semiconductor, has demonstrated its capabilities as a high resolution imaging device. The sensor was prepared with a 55 μ m pitch array of gold contacts, designed to couple with the Timepix imaging ASIC. The resulting device was tested at the High Flux Isotope Reactor, demonstrating a response to cold neutrons when enriched in 95% 6 Li. The imaging system performed a series of experiments resulting in a <200 μ m resolution limit with the Paul Scherrer Institute (PSI Siemens star mask and a feature resolution of 34 μ m with a knife-edge test. Furthermore, the system was able to resolve the University of Tennessee logo inscribed into a 3D printed 1 cm 3 plastic block. This technology marks the application of high resolution neutron imaging using a direct readout semiconductor.

Recalibration of indium foil for personnel screening in criticality accidents.

Science.gov (United States)

Takada, C; Tsujimura, N; Mikami, S

2011-03-01

At the Nuclear Fuel Cycle Engineering Laboratories of the Japan Atomic Energy Agency (JAEA), small pieces of indium foil incorporated into personal dosemeters have been used for personnel screening in criticality accidents. Irradiation tests of the badges were performed using the SILENE reactor to verify the calibration of the indium activation that had been made in the 1980s and to recalibrate them for simulated criticalities that would be the most likely to occur in the solution process line. In addition, Monte Carlo calculations of the indium activation using the badge model were also made to complement the spectral dependence. The results lead to a screening level of 15 kcpm being determined that corresponds to a total dose of 0.25 Gy, which is also applicable in posterior-anterior exposure. The recalibration based on the latest study will provide a sounder basis for the screening procedure in the event of a criticality accident.

Synthesis of indium nanoclusters and formation of thin film contacts on plastic substrates for organic and flexible electronics applications

International Nuclear Information System (INIS)

Shi, Frank F; Bulkowski, Michal; Hsieh, K C

2007-01-01

In this work, we described the processes of synthesizing free-standing indium nanoclusters using inverse micelles and microemulsions as well as synthesizing organic-encapsulated indium nanoclusters using alkanethiols as the organic encapsulants. The synthesized organic-encapsulated indium nanoclusters have demonstrated the feasibilities to be used as plastic compatible soft metal contacts for emerging organic devices. The homogeneously distributed indium nanoclusters with sizes of 10-30 nm have been fabricated on a few different plastic substrates. By changing the alkanethiol carbon chain length and the sizes of the indium nanoclusters, the annealing temperature required to form low-resistance indium thin film conductors has been reduced to 80-100 deg. C, which is acceptable for a variety of organic thin films

Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials

Directory of Open Access Journals (Sweden)

Anna M. K. Gustafsson

2015-01-01

Full Text Available Recycling of the semiconductor material copper indium gallium diselenide (CIGS is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric acid solutions of dissolved selenium-depleted material. Suitable potentials for the reduction of copper and indium were determined to be −0.5 V and −0.9 V (versus the Ag/AgCl reference electrode, respectively, using cyclic voltammetry. Electrodeposition of first copper and then indium from a solution containing the dissolved residue from the selenium separation and ammonium chloride in 1 M HCl gave a copper yield of 100.1 ± 0.5% and an indium yield of 98.1 ± 2.5%. The separated copper and indium fractions contained no significant contamination of the other elements. Gallium remained in solution together with a small amount of indium after the separation of copper and indium and has to be recovered by an alternative method since electrowinning from the chloride-rich acid solution was not effective.

Enhanced photocatalytic activity of titania with unique surface indium and boron species

Energy Technology Data Exchange (ETDEWEB)

Yu, Yanlong; Wang, Enjun; Yuan, Jixiang [MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin 300457 (China); Cao, Yaan, E-mail: caoyaan@yahoo.com [MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin 300457 (China)

2013-05-15

Indium and boron co-doped TiO{sub 2} photocatalysts were prepared by a sol–gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV–vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO{sub 2} in interstitial mode, while indium is present as unique chemical species of O–In–Cl{sub x} (x = 1 or 2) on the surface. Compared with pure TiO{sub 2}, the narrowness of band gap of TiO{sub 2} doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O–In–Cl{sub x} (x = 1 or 2) and B{sub 2}O{sub 3} species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO{sub 2} showed the much higher photocatalytic activities than pure TiO{sub 2}, boron doped TiO{sub 2} (TiO{sub 2}–B) and indium doped TiO{sub 2} (TiO{sub 2}–In) under visible and UV light irradiation.

Diagnosis of infection by preoperative scintigraphy with indium-labeled white blood cells

International Nuclear Information System (INIS)

Wukich, D.K.; Abreu, S.H.; Callaghan, J.J.; Van Nostrand, D.; Savory, C.G.; Eggli, D.F.; Garcia, J.E.; Berrey, B.H.

1987-01-01

Scintigraphy with indium-labeled white blood cells has been reported to be sensitive and specific in the diagnosis of low-grade sepsis of the musculoskeletal system. We reviewed the records of fifty patients who had suspected osteomyelitis or suspected infection about a total joint prosthesis and who underwent scintigraphy with technetium-99m methylene diphosphonate and scintigraphy with indium-111 oxine-labeled white blood cells before an open surgical procedure. Any patient who received preoperative antibiotics was not included in the study. For all of the patients, gram-stain examination of smears, evaluation of a culture of material from the operative site, and histological examination were done. The patients were divided into two groups. Group I was composed of twenty-four patients, each of whom had a prosthesis in place and complained of pain. Group II was composed of twenty-six patients for whom a diagnosis of chronic osteomyelitis had to be considered. With the indium scans alone, there was only one false-negative result (in Group II), but there were eighteen false-positive results (eight patients in Group II and ten patients in Group I). Although scintigraphy with indium-labeled white blood cells is quite sensitive, it is not specific in detecting chronic osteomyelitis; a negative scan should be considered highly suggestive that osteomyelitis is not present. Specificity can be increased by interpreting the indium scan in conjunction with the technetium scan

Interaction of indium trichloride with calcium carbonate in aqueous solutions

International Nuclear Information System (INIS)

Kochetkova, N.V.; Toptygina, G.M.; Soklakova, O.V.; Evdokimov, V.I.

1991-01-01

Interaction of indium trichloride with calcium carbonate in aqueous solutions was studied, using methods of potentiometry, isothermal solubility and physicochemical computer simulating. The Gibb's energy value for crystal indium trihydroxide formation was calculated on the basis of experimental data on In(OH) 3 solubility. The value obtained was used for estimating equilibrium composition of InCl 3 -HCl-CaCO 3 -CO 2 -H 2 O system at a temperature of 25 deg C and carbon dioxide partial pressure of 0.05 to 1 at

The distribution of gallium, germanium and indium in conventional and non-conventional resources. Implications for global availability

Energy Technology Data Exchange (ETDEWEB)

Frenzel, Max

2016-10-25

Over the past 10 years, increased interest in the supply security of metal and mineral raw materials has resulted in the compilation of many lists of materials of particular concern. These materials are generally referred to as 'critical'. They are perceived to be both of high economic importance, as well as subject to high supply risks. Of particular relevance with respect to supply risk is the assessment of geological risk factors. However, this aspect is not considered in sufficient detail in most studies. In particular, the specific features of elements won as by-products are not adequately represented in any assessment. Yet many of these elements are often classified as critical, mostly due to their apparent importance in high-tech applications, the intransparency of their respective markets and resulting price volatility, and the concentration of their production in China. Gallium, germanium and indium are all good examples of such elements. All three are similar in many respects, and commonly have a similar rating in both the economic importance and supply risk dimensions. The aim of this work was to use these three elements as examples, and investigate whether they are truly as similar as current assessments suggest, or whether there are large underlying differences in their specific supply situations. In particular, the focus was on physical supply limitations: Since by-products can only be extracted with other main-product raw materials, their rate of extraction is limited by the extraction rate of these main products. This means that the relevant quantities for an assessment of their physical supply limitations are not reserves and/or resources, but supply potentials. The supply potential is the quantity of a given by-product which could theoretically be extracted under current market conditions (price, technology) per year if all suitable raw materials were processed accordingly. To assess the supply potentials of gallium, germanium and indium

Spectroscopic investigation of indium halides as substitudes of mercury in low pressure discharges for lighting applications

Energy Technology Data Exchange (ETDEWEB)

Briefi, Stefan

2012-05-22

Low pressure discharges with indium halides as radiator are discussed as substitutes for hazardous mercury in conventional fluorescent lamps. In this work, the applicability of InBr and InCl in a low pressure discharge light source is investigated. The aim is to identify and understand the physical processes which determine the discharge characteristics and the efficiency of the generated near-UV emission of the indium halide molecule and of the indium atom which is created due to dissociation processes in the plasma. As discharge vessels sealed cylindrical quartz glass tubes which contain a defined amount of indium halide and a rare gas are used. Preliminary investigations showed that for a controlled variation of the indium halide density a well-defined cold spot setup is mandatory. This was realized in the utilized experimental setup. The use of metal halides raises the issue, that power coupling by internal electrodes is not possible as the electrodes would quickly be eroded by the halides. The comparison of inductive and capacitive RF-coupling with external electrodes revealed that inductively coupled discharges provide higher light output and much better long term stability. Therefore, all investigations are carried out using inductive RF-coupling. The diagnostic methods optical emission and white light absorption spectroscopy are applied. As the effects of absorption-signal saturation and reabsorption of emitted radiation within the plasma volume could lead to an underestimation of the determined population densities by orders of magnitude, these effects are considered in the data evaluation. In order to determine the electron temperature and the electron density from spectroscopic measurements, an extended corona model as population model of the indium atom has been set up. A simulation of the molecular emission spectra has been implemented to investigate the rovibrational population processes of the indium halide molecules. The impact of the cold spot

Kinetic study of indium-111 labelled platelets in idiopathic thrombocytopenic purpura

International Nuclear Information System (INIS)

Reiffers, J.; Vuillemin, L.; Broustet, A.; Ducassou, D.

1982-01-01

Labelling platelets with 111 Indium-oxine has advantages over the conventional 51 chromium method: labelling is more efficient and the radiations emitted almost exclusively consist of gamma-rays. Owing to these advantages, autologous platelets can be used for kinetic studies in patients with idiopathic thrombocytopenic purpura, even when thrombocytopenia is severe. 111 Indium labelling also provides accurate information on the sites of platelet destruction, which may help to predict the patient's response to splenectomy [fr

NOAA TIFF Image - 50m Backscatter, Charleston Bump - Deep Coral Priority Areas - Nancy Foster - (2006), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the backscatter intensity of the Charleston Bump off of the South Atlantic Bight,...

Unusual tensile behaviour of fibre-reinforced indium matrix composite and its in-situ TEM straining observation

International Nuclear Information System (INIS)

Luo, Xin; Peng, Jianchao; Zandén, Carl; Yang, Yanping; Mu, Wei; Edwards, Michael; Ye, Lilei; Liu, Johan

2016-01-01

Indium-based thermal interface materials are superior in thermal management applications of electronic packaging compared to their polymer-based counterparts. However, pure indium has rather low tensile strength resulting in poor reliability. To enhance the mechanical properties of such a material, a new composite consisting of electrospun randomly oriented continuous polyimide fibres and indium was fabricated. The composite has been characterised by tensile tests and in-situ transmission electron microscopy straining observations. It is shown that the composite's ultimate tensile strength at 20 °C is five times higher than that of pure indium, and the strength of the composite exceeds the summation of strengths of the individual components. Furthermore, contrary to most metallic matrix materials, the ultimate tensile strength of the composite decreases with the increased strain rate in a certain range. The chemical composition and tensile fracture of the novel composite have been analysed comprehensively by means of scanning transmission electron microscopy and scanning electron microscopy. A strengthening mechanism based on mutually reinforcing structures formed by the indium and surrounding fibres is also presented, underlining the effect of compressing at the fibre/indium interfaces by dislocation pileups and slip pinning.

Synthesis of indium-111 mesoprotoporphyrin IX

International Nuclear Information System (INIS)

Lee, K.M.; Marshall, A.G.

1981-01-01

Indium-111 mesoprotoporphyrin IX has been prepared by refluxing suitable proportions of InCl 3 , sodium acetate, and mesoprotoporphyrin IX in glacial acetic acid. The labeled metalloporphyrin is sufficiently water-soluble for use as a scanning agent, and can also be incorporated into heme apoproteins for perturbed gamma-gamma angular correlation measurements. (author)

Analysis and calibration of transient enhanced diffusion for an indium impurity in a nanoscale semiconductor device

International Nuclear Information System (INIS)

Lee, Jun-Ha; Lee, Hoong-Joo

2005-01-01

We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO 2 interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-μm device characteristics, such as V th and I dsat , for which the differences between simulation and experiment less than 5 %.

Solvent extraction studies of indium-mixed chelates with β-diketones in benzene media

International Nuclear Information System (INIS)

Sudersanan, M.; Sundaram, A.K.

1975-01-01

Mixed chelate formation of indium with several β-diketones has been studied in benzene media. The extraction of indium by benzoyltrifluoroacetone (BFA) and furoyltrifluoroacetone (FFA) has been carried out as a function of pH and concentration of the ligand to ascertain the nature of the complexes. The extraction of indium by a mixture of β-diketones, viz., BFA-benzoylacetone(BA), BFA-dibenzoylmethene (DBM), FFA-BA, FFA-DBM, FFA-BFA and DBM-BA has also been studied as a function of the solution parameters. The nature of the mixed complexes formed as well as their equilibrium constants, statistical and stabilisation constants have been evaluated. (author)

False positive indium-111 white blood cell scan in a closed clavicle fracture

International Nuclear Information System (INIS)

Friedman, R.J.; Gordon, L.

1988-01-01

Aggressive treatment of the multiply injured patient often requires early fixation of many fractures, some of which may be open. Often, patients develop postoperative fevers requiring a thorough workup to rule out infection. Recently, indium-111 white blood cell (WBC) imaging has become a valuable adjunct in the diagnosis of acute infection. The patient described had a simple, closed clavicle fracture with markedly increased activity on an indium-111 WBC scan obtained for fever workup. This subsequently proved to be a normal, healing, noninfected fracture by other diagnostic techniques. Noninfected, simple closed fractures should be added to the list of causes for a false-positive indium-111 WBC scan

Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

KAUST Repository

El Afandy, Rami

2011-07-07

Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

The mobility of indium and gallium in groundwater systems: constraining the role of sorption in sand column experiments

Science.gov (United States)

Dror, I.; Ringering, K.; Yecheskel, Y.; Berkowitz, B.

2017-12-01

The mobility of indium and gallium in groundwater environments was studied via laboratory experiments using quartz sand as a porous medium. Indium and gallium are metals of very low abundance in the Earth's crust and, correspondingly, the biosphere is only adapted to very small concentrations of these elements. However, in modern semiconductor industries, both elements play a central role and are incorporated in devices of mass production such as smartphones and digital cameras. The resulting considerable increase in production, use and discharge of indium and gallium throughout the last two decades, with a continuous and fast increase in the near future, raises questions regarding the fate of both elements in the environment. However, the transport behavior of these two metals in soils and groundwater systems remains poorly understood to date. Because of the low solubility of both elements in aqueous solutions, trisodium citrate was used as a complexation agent to stabilize the solutions, enabling investigation of the transport of these metals at neutral pH. Column experiments showed different binding capacities for indium and gallium, where gallium is much more mobile compared to indium and both metals are substantially retarded in the column. Different affinities were also confirmed by examining sorption isotherms of indium and gallium in equilibrium batch systems. The effect of natural organic matter on the mobility of indium and gallium was also studied, by addition of humic acid. For both metals, the presence of humic acid affects the sorption dynamics: for indium, sorption is strongly inhibited leading to much higher mobility, whereas gallium showed a slightly higher sorption affinity and very similar mobility compared to the same setup without humic acid addition. However, in all cases, the binding capacity of gallium to quartz is much weaker than that of indium. These results are consistent with the assumption that indium and gallium form different types

NOAA TIFF Image - 50m Singlebeam Bathymetry, Charleston Bump - Deep Coral Priority Areas - Whiting - (2000), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 50x50 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

NOAA TIFF Image - 50m Multibeam Bathymetry, Charleston Bump - Deep Coral Priority Areas - Whiting - (2001), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 50x50 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

NOAA TIFF Image - 30m Rugosity, Charleston Bump - Deep Coral Priority Areas - Thomas Jefferson - (2007), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

NOAA TIFF Image - 50m Singlebeam Slope, Charleston Bump - Deep Coral Priority Areas - Whiting - (2000), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 50x50 meter cell size representing the slope of the Charleston Bump off of the South Atlantic Bight, derived from...

NOAA TIFF Image - 30m Rugosity, Charleston Bump - Deep Coral Priority Areas - Nancy Foster - (2006), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the 2006 multibeam bathymetry of the Charleston Bump off of the South Atlantic Bight,...

NOAA TIFF Image - 30m Slope, Charleston Bump - Deep Coral Priority Areas - Little Hales- (2003), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the slope (in degrees) of themultibeam bathymetry of the Charleston Bump off of the...

Indium and thallium

International Nuclear Information System (INIS)

1976-01-01

The physical and the chemical properties and methods for producing indium and its main compounds have been studied. Presented are the major fields of application of the metal, inclusive of the atomic and space engineering. Described are the natural occurrence and the types of deposits of this disseminated element. Given are the main methods for extracting In from various raw materials, the methods being also evaluated economically. It is inferred, that all the conditions being equal, the extraction technique yields In at a lesser cost, a higher recovery and higher labour productivity. Described are methods for manufacturing the frequently used In compounds, such as the antimonide, arsenide, phosphide

Indium flotation from hydrometallurgical solutions

International Nuclear Information System (INIS)

Sviridov, V.V.; Mal'tsev, G.I.; Petryakova, N.K.; Gomzikov, A.I.

1980-01-01

The principal possibility of flotation of indium small quantities (10 -4 gxion/l) is established from sulphuric-acid solutions of leaching converter dusts of the copper melting production in the form of complex compounds with sodium hexametaphosphate and cation-active nitrogen-containing surfactants. It is shown that the flotation process effectiveness is determined by the molar ratio of hexametaphosphate and collector introduced into the solution, solution oxidity and surfactant nature

NOAA TIFF Image - 30m Slope, Charleston Bump - Deep Coral Priority Areas - Nancy Foster - (2006), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the slope (in degrees) of the 2006 multibeam bathymetry of the Charleston Bump off of...

Evaluation of musculoskeletal sepsis with indium-111 white blood cell imaging

International Nuclear Information System (INIS)

Ouzounian, T.J.; Thompson, L.; Grogan, T.J.; Webber, M.M.; Amstutz, H.C.

1987-01-01

The detection of musculoskeletal sepsis, especially following joint replacement, continues to be a challenging problem. Often, even with invasive diagnostic evaluation, the diagnosis of infection remains uncertain. This is a report on the first 55 Indium-111 white blood cell (WBC) images performed in 39 patients for the evaluation of musculoskeletal sepsis. There were 40 negative and 15 positive Indium-111 WBC images. These were correlated with operative culture and tissue pathology, aspiration culture, and clinical findings. Thirty-eight images were performed for the evaluation of possible total joint sepsis (8 positive and 30 negative images); 17 for the evaluation of nonarthroplasty-related musculoskeletal sepsis (7 positive and 10 negative images). Overall, there were 13 true-positive, 39 true-negative, two false-positive, and one false-negative images. Indium-111 WBC imaging is a sensitive and specific means of evaluating musculoskeletal sepsis, especially following total joint replacement

Indium-bridged [1]ferrocenophanes.

Science.gov (United States)

Bagh, Bidraha; Sadeh, Saeid; Green, Jennifer C; Müller, Jens

2014-02-17

Indium-bridged [1]ferrocenophanes ([1]FCPs) and [1.1]ferrocenophanes ([1.1]FCPs) were synthesized from dilithioferrocene species and indium dichlorides. The reaction of Li2fc⋅tmeda (fc = (H4C5)2Fe) and (Mamx)InCl2 (Mamx = 6-(Me2NCH2)-2,4-tBu2C6H2) gave a mixture of the [1]FCP (Mamx)Infc (4(1)), the [1.1]FCP [(Mamx)Infc]2 (4(2)), and oligomers [(Mamx)Infc]n (4(n)). In a similar reaction, employing the enantiomerically pure, planar-chiral (Sp,Sp)-1,1'-dibromo-2,2'-diisopropylferrocene (1) as a precursor for the dilithioferrocene derivative Li2fc(iPr2), equipped with two iPr groups in the α position, gave the inda[1]ferrocenophane 5(1) [(Mamx)Infc(iPr2)] selectively. Species 5(1) underwent ring-opening polymerization to give the polymer 5(n). The reaction between Li2fc(iPr2) and Ar'InCl2 (Ar' = 2-(Me2NCH2)C6H4) gave an inseparable mixture of the [1]FCP Ar'Infc(iPr2) (6(1)) and the [1.1]FCP [Ar'Infc(iPr2)]2 (6(2)). Hydrogenolysis reactions (BP86/TZ2P) of the four inda[1]ferrocenophanes revealed that the structurally most distorted species (5(1)) is also the most strained [1]FCP. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Radioactive indium labelling of the figured elements of blood. Method, results, applications

International Nuclear Information System (INIS)

Ducassou, D.; Nouel, J.P.

Following the work of Thakur et al. the authors became interested in red corpuscle, leucocyte and platelet labelling with indium 111 or 113m (8 hydroxyquinolein-indium). For easier labelling of the figured elements of blood the technique described was modified. The chelate is prepared by simple contact at room temperature of indium 111 or 113m chloride and water-soluble 8 hydroxyquinolein sulphate, in the presence of 0.2M TRIS buffer. The figured element chosen suspended in physiological serum is added directly to the solution obtained, the platelets and leucocytes being separated out beforehand by differential centrifugation. While it gives results similar to those of Thabur et al. the method proposed avoids the chloroform extraction of the radioactive chelate and the use of alcohol, liable to impair the platelet regation capacity [fr

Cross-validation and Peeling Strategies for Survival Bump Hunting using Recursive Peeling Methods

Science.gov (United States)

Dazard, Jean-Eudes; Choe, Michael; LeBlanc, Michael; Rao, J. Sunil

2015-01-01

We introduce a framework to build a survival/risk bump hunting model with a censored time-to-event response. Our Survival Bump Hunting (SBH) method is based on a recursive peeling procedure that uses a specific survival peeling criterion derived from non/semi-parametric statistics such as the hazards-ratio, the log-rank test or the Nelson--Aalen estimator. To optimize the tuning parameter of the model and validate it, we introduce an objective function based on survival or prediction-error statistics, such as the log-rank test and the concordance error rate. We also describe two alternative cross-validation techniques adapted to the joint task of decision-rule making by recursive peeling and survival estimation. Numerical analyses show the importance of replicated cross-validation and the differences between criteria and techniques in both low and high-dimensional settings. Although several non-parametric survival models exist, none addresses the problem of directly identifying local extrema. We show how SBH efficiently estimates extreme survival/risk subgroups unlike other models. This provides an insight into the behavior of commonly used models and suggests alternatives to be adopted in practice. Finally, our SBH framework was applied to a clinical dataset. In it, we identified subsets of patients characterized by clinical and demographic covariates with a distinct extreme survival outcome, for which tailored medical interventions could be made. An R package PRIMsrc (Patient Rule Induction Method in Survival, Regression and Classification settings) is available on CRAN (Comprehensive R Archive Network) and GitHub. PMID:27034730

Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

KAUST Repository

Elafandy, Rami T.; Bhattacharya, Pallab K.; Cha, Dong Kyu; Ng, Tien Khee; Ooi, Boon S.; Zhang, Meng

2012-01-01

Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature

Effect of Indium nano-sandwiching on the structural and optical performance of ZnSe films

Directory of Open Access Journals (Sweden)

S.E. Al Garni

Full Text Available In the current study, we attempted to explore the effects of the Indium nanosandwiching on the mechanical and optical properties of the physically evaporated ZnSe thin films by means of X-ray diffractions and ultraviolet spectrophotometry techniques. While the thickness of each layer of ZnSe was fixed at 1.0 μm, the thickness of the nanosandwiched Indium thin films was varied in the range of 25–100 nm. It was observed that the as grown ZnSe films exhibits cubic and hexagonal nature of crystallization as those of the ZnSe powders before the film deposition. The cubic phases weighs ∼70% of the structure. The analysis of this phases revealed that there is a systematic variation process presented by the decreasing of; the lattice constant, compressing strain, stress, stacking faults and dislocation intensity and increasing grain size resulted from increasing the Indium layer thickness in the range of 50–100 nm. In addition, the nanosandwiching of Indium between two layers of ZnSe is observed to enhance the absorbability of the ZnSe. Particularly, at incident photon energy of 2.38 eV the absorbability of the ZnSe films which are sandwiched with 100 nm Indium is increased by 13.8 times. Moreover, increasing the thickness of the Indium layer shrinks the optical energy band gap. These systematic variations in mechanical and optical properties are assigned to the better recrystallization process that is associated with Indium insertion which in turn allows total internal energy redistribution in the ZnSe films through the enlargement of grains. Keywords: ZnSe, Nanosandwiching, Mechanical, Optical gap

Voltammetry and coulometry of indium in two-side thin-layer system

International Nuclear Information System (INIS)

Eliseeva, L.V.; Kabanova, O.L.

1980-01-01

An electrochemical behaviour of In and possibilities for its determination have been investigated, using halide background solutions, by voltametry in the thin solution layer thin mercury film system. It has been shown that the maximum current of indium (3) is directly proportional to its concentration over a range of 1x10 -4 - 5x10 -3 M and the maximum current of indium oxidation from the amalgam over a range of 5x10 -7 - 1x10 -4 M. Examined were the effects of halide ion concentration, pH, electrode potential change rate on current maximum value, product efficiency of reducing indium (3) and oxidizing its amalgam, on maximum current potential and half-peak width. The analytical signal has been found to be directly proportional to chloride ion concentration over a range of 0.1 - 3.0 M, bromide and iodide ion concentration over a range of 0.1 - 1.0 M. This makes it possible to use the method for determination of halide ions

Optical investigations on indium oxide nano-particles prepared through precipitation method

International Nuclear Information System (INIS)

Seetha, M.; Bharathi, S.; Dhayal Raj, A.; Mangalaraj, D.; Nataraj, D.

2009-01-01

Visible light emitting indium oxide nanoparticles were synthesized by precipitation method. Sodium hydroxide dissolved in ethanol was used as a precipitating agent to obtain indium hydroxide precipitates. Precipitates, thus formed were calcined at 600 deg. C for 1 h to obtain indium oxide nanoparticles. The structure of the particles as determined from the X-Ray diffraction pattern was found to be body centered cubic. The phase transformation of the prepared nanoparticles was analyzed using thermogravimetry. Surface morphology of the prepared nanoparticles was analyzed using high resolution-scanning electron microscopy and transmission electron microscopy. The results of the analysis show cube-like aggregates of size around 50 nm. It was found that the nanoparticles have a strong emission at 427 nm and a weak emission at 530 nm. These emissions were due to the presence of singly ionized oxygen vacancies and the nature of the defect was confirmed through Electron paramagnetic resonance analysis.

Electrical properties of indium arsenide irradiated with fast neutrons

International Nuclear Information System (INIS)

Kolin, N.G.; Osvenskii, V.B.; Rytova, N.S.; Yurova, E.S.

1987-01-01

A study was made of the influence of irradiation with fast reactor neutrons on electrical properties of indium arsenide samples with different dopant concentrations. The laws governing the formation and annealing of radiation defects in indium arsenide were found to be governed by the donor-acceptor interaction. Depending on the density of free carriers in the original crystal, irradiation could produce charged defects of predominantly donor or acceptor types. Donor defects in irradiated InAs samples were annealed practically completely, whereas a considerable fraction of residual acceptor defects was retained even after heat treatment at 900 degree C. The concentration of these residual acceptors depended on the electron density at the annealing temperature

Equation of state of liquid Indium under high pressure

Directory of Open Access Journals (Sweden)

Huaming Li

2015-09-01

Full Text Available We apply an equation of state of a power law form to liquid Indium to study its thermodynamic properties under high temperature and high pressure. Molar volume of molten indium is calculated along the isothermal line at 710K within good precision as compared with the experimental data in an externally heated diamond anvil cell. Bulk modulus, thermal expansion and internal pressure are obtained for isothermal compression. Other thermodynamic properties are also calculated along the fitted high pressure melting line. While our results suggest that the power law form may be a better choice for the equation of state of liquids, these detailed predictions are yet to be confirmed by further experiment.

Recent developments in MrBUMP: better search-model preparation, graphical interaction with search models, and solution improvement and assessment.

Science.gov (United States)

Keegan, Ronan M; McNicholas, Stuart J; Thomas, Jens M H; Simpkin, Adam J; Simkovic, Felix; Uski, Ville; Ballard, Charles C; Winn, Martyn D; Wilson, Keith S; Rigden, Daniel J

2018-03-01

Increasing sophistication in molecular-replacement (MR) software and the rapid expansion of the PDB in recent years have allowed the technique to become the dominant method for determining the phases of a target structure in macromolecular X-ray crystallography. In addition, improvements in bioinformatic techniques for finding suitable homologous structures for use as MR search models, combined with developments in refinement and model-building techniques, have pushed the applicability of MR to lower sequence identities and made weak MR solutions more amenable to refinement and improvement. MrBUMP is a CCP4 pipeline which automates all stages of the MR procedure. Its scope covers everything from the sourcing and preparation of suitable search models right through to rebuilding of the positioned search model. Recent improvements to the pipeline include the adoption of more sensitive bioinformatic tools for sourcing search models, enhanced model-preparation techniques including better ensembling of homologues, and the use of phase improvement and model building on the resulting solution. The pipeline has also been deployed as an online service through CCP4 online, which allows its users to exploit large bioinformatic databases and coarse-grained parallelism to speed up the determination of a possible solution. Finally, the molecular-graphics application CCP4mg has been combined with MrBUMP to provide an interactive visual aid to the user during the process of selecting and manipulating search models for use in MR. Here, these developments in MrBUMP are described with a case study to explore how some of the enhancements to the pipeline and to CCP4mg can help to solve a difficult case.

Assessing Rare Metal Availability Challenges for Solar Energy Technologies

Directory of Open Access Journals (Sweden)

Leena Grandell

2015-08-01

Full Text Available Solar energy is commonly seen as a future energy source with significant potential. Ruthenium, gallium, indium and several other rare elements are common and vital components of many solar energy technologies, including dye-sensitized solar cells, CIGS cells and various artificial photosynthesis approaches. This study surveys solar energy technologies and their reliance on rare metals such as indium, gallium, and ruthenium. Several of these rare materials do not occur as primary ores, and are found as byproducts associated with primary base metal ores. This will have an impact on future production trends and the availability for various applications. In addition, the geological reserves of many vital metals are scarce and severely limit the potential of certain solar energy technologies. It is the conclusion of this study that certain solar energy concepts are unrealistic in terms of achieving TW scales.

NOAA TIFF Image - 50m Multibeam Bathymetry, Charleston Bump - Deep Coral Priority Areas - Little Hales - (2003), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

NOAA TIFF Image - 30m Multibeam Bathymetry, Charleston Bump - Deep Coral Priority Areas - Nancy Foster - (2006), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

NOAA TIFF Image - 30m Multibeam Bathymetry, Charleston Bump - Deep Coral Priority Areas - Thomas Jefferson - (2007), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

Chemical composition of cadmium selenochromite crystals doped with indium, silver and gallium

International Nuclear Information System (INIS)

Bel'skij, N.K.; Ochertyanova, L.I.; Shabunina, G.G.; Aminov, T.G.

1985-01-01

The high accuracy chemical analysis Which allows one to observe doping effect on the cadmium selenochromite crystal composition is performed. The problem on the possibility of impurity atom substitution for basic element is considered on the basis of data of atomic-absorption analysis of doped crystals. The crystals of cadmium selenochromite doped with indium by chromium to cadmium ratio are distributed into two groups and probably two types of substitution take place. At 0.08-1.5 at.% indium concentrations the Cr/Cd ratio >2. One can assume that indium preferably takes cadmium tetrahedral positions whereas at 1.5-2.5 at. % concentrations the Cr/Cd ratio =2 and cadmium is substituted for silver which does not contradict crystallochemical and physical properties of this compound. In crystals with gallium the Cr/Cd ratio <2. Gallium preferably substitutes chromium

The density of molten indium at temperatures up to 600 K

International Nuclear Information System (INIS)

Alchagirov, B.B.; Khatsukov, A.M.; Mozgovoj, A.G.

2004-01-01

The liquid indium density measurement is carried out through the pycnometric method within the temperature range of 434-600 K both by heating and cooling. The totality of the obtained results was processed through the approximating equation. The root-mean-square deviation of the experimental data from the approximating equation does not exceed ±0.01%. The high accuracy of the obtained results is noted. The deviation of the existing data on the liquid indium density from the approximating equation is shown graphically [ru

Expanding Medicaid Access without Expanding Medicaid: Why Did Some Nonexpansion States Continue the Primary Care Fee Bump?

Science.gov (United States)

Wilk, Adam S; Evans, Leigh C; Jones, David K

2018-02-01

Six states that have rejected the Patient Protection and Affordable Care Act's (ACA) Medicaid expansion nonetheless extended the primary care "fee bump," by which the federal government increased Medicaid fees for primary care services up to 100 percent of Medicare fees during 2013-14. We conducted semistructured interviews with leaders in five of these states, as well as in three comparison states, to examine why they would continue a provision of the ACA that moderately expands access at significant state expense while rejecting the expansion and its large federal match, focusing on relevant economic, political, and procedural factors. We found that fee bump extension proposals were more successful where they were dissociated from major national policy debates, actionable with the input of relatively few stakeholder entities, and well aligned with preexisting policy-making structures and decision trends. Republican proposals to cap or reduce federal funding for Medicaid, if enacted, would compel states to contain program costs. In this context, states' established decision-making processes for updating Medicaid fee schedules, which we elucidate in this study, may shape the future of the Medicaid program. Copyright © 2018 by Duke University Press 2018.

Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

KAUST Repository

Elafandy, Rami T.

2011-12-01

Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

Positive indium-III bone marrow scan in metastatic breast carcinoma. Case report

International Nuclear Information System (INIS)

LaManna, M.M.; Hyzinski, M.; Swami, V.K.; Parker, J.A.

1984-01-01

Indium is generally presumed to localize in the bone marrow within the erythroid cell line. Fibrosis, inflammation, lymphoma, extended field radiation, chemotherapy, or combinations of both treatment modalities generally depress the uptake of indium by the marrow in a complex fashion. We report a case of metastatic breast carcinoma and pancytopenia in which the In-111 scan appeared qualitatively similar to a Tc-99m MDP bone scan. Findings were confirmed by bone marrow biopsy

Transonic buffet control research with two types of shock control bump based on RAE2822 airfoil

Directory of Open Access Journals (Sweden)

Yun TIAN

2017-10-01

Full Text Available Current research shows that the traditional shock control bump (SCB can weaken the intensity of shock and better the transonic buffet performance. The author finds that when SCB is placed downstream of the shock, it can decrease the adverse pressure gradient. This may prevent the shock foot separation bubble to merge with the trailing edge separation and finally improve the buffet performance. Based on RAE2822 airfoil, two types of SCB are designed according to the two different mechanisms. By using Reynolds-averaged Navier-Stokes (RANS and unsteady Reynolds-averaged Navier-Stokes (URANS methods to analyze the properties of RAE2822 airfoil with and without SCB, the results show that the downstream SCB can better the buffet performance under a wide range of freestream Mach number and the steady aerodynamics characteristic is similar to that of RAE2822 airfoil. The traditional SCB can only weaken the intensity of the shock under the design condition. Under the off-design conditions, the SCB does not do much to or even worsen the buffet performance. Indeed, the use of backward bump can flatten the leeward side of the airfoil, and this is similar to the mechanism that supercritical airfoil can weaken the recompression of shock wave.

Heat-up synthesis of Ag–In–S and Ag–In–S/ZnS nanocrystals: Effect of indium precursors on their optical properties

International Nuclear Information System (INIS)

Chen, Siqi; Ahmadiantehrani, Mojtaba; Zhao, Jialong; Zhu, Shaihong; Mamalis, Athanasios G.; Zhu, Xiaoshan

2016-01-01

Cadmium-free I–III–VI nanocrystals (NCs) have recently attracted much research interests due to their excellent optical properties and low toxicity. In this work, with a simple heat-up synthetic system to prepare high quality Ag–In–S (AIS) NCs and their core/shell structures (AIS/ZnS NCs), we investigated the effect of different indium precursors (indium acetate and indium chloride) on NC optical properties. The measurements on photoluminescence spectra of AIS NCs show that the photoluminescence peak-wavelength of AIS NCs using indium acetate is in the range from 596 to 604 nm, and that of AIS NCs using indium chloride is from 641 to 660 nm. AIS and AIS/ZnS NCs using indium acetate present around 15% and 40% QYs, and both AIS and AIS/ZnS NCs using indium chloride present around 31% QYs. The photoluminescence decay study indicates that the lifetime parameters of AIS and AIS/ZnS using indium chloride are 2–4 times larger than those of AIS and AIS/ZnS NCs using indium acetate. Moreover, AIS NCs using indium chloride have a slower photobleaching dynamics than AIS NCs using indium acetate, and ZnS shell coating on both types of AIS NCs significantly enhances their photostability against UV exposure. We believe that the unique optical properties of AIS and AIS/ZnS NCs will open an avenue for these materials to be employed in broad electronic or biomedical applications. - Highlights: • High quality of AIS and AIS/ZnS NCs were prepared by heat-up. • Different indium precursors in AIS synthesis can impact AIS optical properties. • The impacted optical properties include emission colors, brightness and life time. • The reason why different indium precursors impact optical properties was explored. • The prepared NCs may have broad electronic and biomedical applications.

Electrochemical impedance spectroscopy investigation on indium tin oxide films under cathodic polarization in NaOH solution

International Nuclear Information System (INIS)

Gao, Wenjiao; Cao, Si; Yang, Yanze; Wang, Hao; Li, Jin; Jiang, Yiming

2012-01-01

The electrochemical corrosion behaviors of indium tin oxide (ITO) films under the cathodic polarization in 0.1 M NaOH solution were investigated by electrochemical impedance spectroscopy. The as-received and the cathodically polarized ITO films were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction for morphological, compositional and structural studies. The results showed that ITO films underwent a corrosion process during the cathodic polarization and the main component of the corrosion products was body-centered cubic indium. The electrochemical impedance parameters were related to the effect of the cathodic polarization on the ITO specimens. The capacitance of ITO specimens increased, while the charge transfer resistance and the inductance decreased with the increase of the polarization time. The proposed mechanism indicated that the corrosion products (metallic indium) were firstly formed during the cathodic polarization and then absorbed on the surface of the ITO film. As the surface was gradually covered by indium particles, the corrosion process was suppressed. - Highlights: ► Cathodic polarization of indium tin oxide (ITO) in 0.1 M NaOH. ► Cathodic polarization studied with electrochemical impedance spectroscopy. ► ITO underwent a corrosion attack during cathodic polarization, indium was observed. ► Electrochemical parameters of ITO were obtained using equivalent electrical circuit. ► A corrosion mechanism is proposed.

Laser-spectroscopic nuclear-structure studies on radioactive silver and indium isotopes

International Nuclear Information System (INIS)

Dinger, U.

1988-05-01

Neutron-deficient silver and neutron-rich indium isotopes were studied by collinear laser spectroscopy. The neutron-deficient nuclei 101 , 103 , 104 , 105 , 105m , 106m Ag were produced as evaporation-residual nuclei in heavy-ion fusion reactions at the mass separator of the GSI in Darmstadt. The fourteen studied indium isotopes and isomers with even mass number in the range 112-126 In were produced by 600-MeV-proton induced fission of a uranium carbide target at the ISOLDE separator in Geneva. The mass-separated ion beam was subsequently deviated electrostatically, neutralized in a sodium vapor and superposed with a c w dye laser. A photon counting system detected the resonance fluorescence of the induced transitions. The hyperfine structure and the isotope shift of the 4d 9 5s 2 2 D 5/2 → 4d 10 6p 2 P 3/2 transition (λ=547.7 nm) in silver and the 5p 2 P 1/2,3/2 → 6s 2 s 1/2 transition (λ=410 respectively 451 nm) in indium were measured. While in indium for the analysis of the data earlier work could be referred to, in silver a detailed analysis of the isotope shift and hyperfine structure was performed by means of ab initio calculations and semi-empirical procedures. Thereby the configuration interactions were especially considered. The nuclear moments were discussed in the framework of existing nuclear models regarding nuclear-spectroscopic informations. (orig./HSI) [de

Indium-111 granulocyte scintigraphy in inflammatory bowel disease

International Nuclear Information System (INIS)

Devillers, A.; Moisan, A.; Heresbach, D.; Darnault, P.; Bretagne, J.F.

1996-01-01

The present paper reports our experience since 1963 concerning 111-indium labeled autologous granulocytes scanning in the assessment of inflammatory bowel diseases and in the assessment of activity in Crohn's disease and ulcerative colitis. (authors). 94 refs., 3 figs

Self-similar bumps and wiggles: Isolating the evolution of the BAO peak with power-law initial conditions

International Nuclear Information System (INIS)

Orban, Chris; Weinberg, David H.

2011-01-01

Motivated by cosmological surveys that demand accurate theoretical modeling of the baryon acoustic oscillation (BAO) feature in galaxy clustering, we analyze N-body simulations in which a BAO-like Gaussian bump modulates the linear theory correlation function ξ L (r)=(r 0 /r) n+3 of an underlying self-similar model with initial power spectrum P(k)=Ak n . These simulations test physical and analytic descriptions of BAO evolution far beyond the range of most studies, since we consider a range of underlying power spectra (n=-0.5, -1, -1.5) and evolve simulations to large effective correlation amplitudes (equivalent to σ 8 =4-12 for r bao =100h -1 Mpc). In all cases, nonlinear evolution flattens and broadens the BAO bump in ξ(r) while approximately preserving its area. This evolution resembles a diffusion process in which the bump width σ bao is the quadrature sum of the linear theory width and a length proportional to the rms relative displacement Σ pair (r bao ) of particle pairs separated by r bao . For n=-0.5 and n=-1, we find no detectable shift of the location of the BAO peak, but the peak in the n=-1.5 model shifts steadily to smaller scales, following r peak /r bao =1-1.08(r 0 /r bao ) 1.5 . The perturbation theory scheme of McDonald (2007) [P. McDonald, Phys. Rev. D 75, 043514 (2007).] and, to a lesser extent, standard 1-loop perturbation theory are fairly successful at explaining the nonlinear evolution of the Fourier power spectrum of our models. Analytic models also explain why the ξ(r) peak shifts much more for n=-1.5 than for n≥-1, though no ab initio model we have examined reproduces all of our numerical results. Simulations with L box =10r bao and L box =20r bao yield consistent results for ξ(r) at the BAO scale, provided one corrects for the integral constraint imposed by the uniform density box.

Effect of heat treatment on anodic activation of aluminium by trace element indium

Energy Technology Data Exchange (ETDEWEB)

Graver, Brit [Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491 Trondheim (Norway); Helvoort, Antonius T.J. van [Department of Physics, Norwegian University of Science and Technology, N-7491 Trondheim (Norway); Nisancioglu, Kemal, E-mail: kemal.nisancioglu@material.ntnu.n [Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491 Trondheim (Norway)

2010-11-15

Research highlights: {yields} Indium segregation activates AlIn alloy surface anodically in chloride solution. {yields} Enrichment of In on Al surface can occur thermally by heat treatment at 300 {sup o}C. {yields} Increasing temperature homogenises indium in aluminium reducing anodic activation. {yields} Indium can activate AlIn surface by segregating through dealloying of aluminium. {yields} Anodic activation is caused by AlIn amalgam formation at aluminium surface. - Abstract: The presence of trace elements in Group IIIA-VA is known to activate aluminium anodically in chloride environment. The purpose of this paper is to investigate the surface segregation of trace element In by heat treatment and resulting surface activation. Model binary AlIn alloys, containing 20 and 1000 ppm by weight of In, were characterized after heat treatment at various temperatures by use of glow discharge optical emission spectroscopy, electron microscopy and electrochemical polarization. Heat treatment for 1 h at 300 {sup o}C gave significant segregation of discrete In particles (thermal segregation), which activated the surface. Indium in solid solution with aluminium, obtained by 1 h heat treatment at 600 {sup o}C, also activated by surface segregation of In on alloy containing 1000 ppm In, resulting from the selective dissolution of the aluminium component during anodic oxidation (anodic segregation). The effect of anodic segregation was reduced by decreasing indium concentration in solid solution; it had negligible effect at the 20 ppm level. The segregated particles were thought to form a liquid phase alloy with aluminium during anodic polarization, which in turn, together with the chloride in the solution destabilized the oxide.

Recovery of indium from used LCD panel by a time efficient and environmentally sound method assisted HEBM

Energy Technology Data Exchange (ETDEWEB)

Lee, Cheol-Hee; Jeong, Mi-Kyung [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, Cheonan 331-717 (Korea, Republic of); Fatih Kilicaslan, M. [Department of Physics, Faculty of Art and Science, Kastamonu University, Kastamonu (Turkey); Lee, Jong-Hyeon [Graduate School of Green Energy Technology and Department of Nanomaterials Engineering, Chungnam National University, 79 Daehak-ro, Yuseong-gu, Dajeon 305-764 (Korea, Republic of); Hong, Hyun-Seon [Advanced Materials and Processing Center, Institute for Advanced Engineering (IAE), Yongin 449-863 (Korea, Republic of); Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, Cheonan 331-717 (Korea, Republic of)

2013-03-15

Highlights: ► In this study, we recovered indium from a waste LCD panel. ► The ITO glass was milled to obtain micron size particles in a HEBM machine. ► Effect of particle size of ITO glass on the amount of dissolved In was investigated. ► In a very short time, a considerable amount of In was recovered. ► Amount of HCl in acid solution was decreased to 40 vol.%. - Abstract: In this study, a method which is environmentally sound, time and energy efficient has been used for recovery of indium from used liquid crystal display (LCD) panels. In this method, indium tin oxide (ITO) glass was crushed to micron size particles in seconds via high energy ball milling (HEBM). The parameters affecting the amount of dissolved indium such as milling time, particle size, effect time of acid solution, amount of HCl in the acid solution were tried to be optimized. The results show that by crushing ITO glass to micron size particles by HEBM, it is possible to extract higher amount of indium at room temperature than that by conventional methods using only conventional shredding machines. In this study, 86% of indium which exists in raw materials was recovered about in a very short time.

Electron emission from individual indium arsenide semiconductor nanowires

NARCIS (Netherlands)

Heeres, E.C.; Bakkers, E.P.A.M.; Roest, A.L.; Kaiser, M.A.; Oosterkamp, T.H.; Jonge, de N.

2007-01-01

A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve,

A sol-gel method to synthesize indium tin oxide nanoparticles

Institute of Scientific and Technical Information of China (English)

Xiuhua Li; Xiujuan xu; Xin Yin; Chunzhong Li; Jianrong Zhang

2011-01-01

Transparent conductive indium tin oxide (ITO) nanoparticles were synthesized by a novel sol-gel method.Granulated indium and tin were dissolved in HNO3 and partially complexed with citric acid.A sol-gel process was induced when tertiary butyl alcohol was added dropwise to the above solution.ITO nanoparticles with an average crystallite size of 18.5 nm and surface area of 32.6 m2/g were obtained after the gel was heat-treated at 700 C.The ITO nanoparticles showed good sinterability,the starting sintering temperature decreased sharply to 900 C,and the 1400 C sintered pellet had a density of 98.1 ％ of theoretical density (TD).

Polarografic study about the complex formation between indium (III) and sodium azide, in aqueous media

International Nuclear Information System (INIS)

Tokoro, R.; Bertotti, M.

1988-01-01

The present work is a branch of the main work concerned with the complex formation between several metal cations and azide ligand in aqueous media. The polarographic behavior of indium in azide system showed the tendency of complexation. Using polarographic method to determine the half potential of indium at each analytical concentration afforded experimental data to evaluate the constants. The azide concentrations was modified from 1 m to 100 m , the ionic strength held at 2,0 M with sodium perchlorate, indium concentration 7.892 x 10 -4 M, and temperature kept constant at 25,0 0 C. (author) [pt

Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films

International Nuclear Information System (INIS)

Pathan, H.M.; Lokhande, C.D.; Kulkarni, S.S.; Amalnerkar, D.P.; Seth, T.; Han, Sung-Hwan

2005-01-01

Indium sulphide (In 2 S 3 ) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In 2 S 3 thin film. The optical band gap was found to be 2.7 eV. The film appeared to be smooth and homogeneous from SEM study

Evaluating the solution from MrBUMP and BALBES

Science.gov (United States)

Keegan, Ronan M.; Long, Fei; Fazio, Vincent J.; Winn, Martyn D.; Murshudov, Garib N.; Vagin, Alexei A.

2011-01-01

Molecular replacement is one of the key methods used to solve the problem of determining the phases of structure factors in protein structure solution from X-ray image diffraction data. Its success rate has been steadily improving with the development of improved software methods and the increasing number of structures available in the PDB for use as search models. Despite this, in cases where there is low sequence identity between the target-structure sequence and that of its set of possible homologues it can be a difficult and time-consuming chore to isolate and prepare the best search model for molecular replacement. MrBUMP and BALBES are two recent developments from CCP4 that have been designed to automate and speed up the process of determining and preparing the best search models and putting them through molecular replacement. Their intention is to provide the user with a broad set of results using many search models and to highlight the best of these for further processing. An overview of both programs is presented along with a description of how best to use them, citing case studies and the results of large-scale testing of the software. PMID:21460449

Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories

Science.gov (United States)

Bonafos, C.; Benassayag, G.; Cours, R.; Pécassou, B.; Guenery, P. V.; Baboux, N.; Militaru, L.; Souifi, A.; Cossec, E.; Hamga, K.; Ecoffey, S.; Drouin, D.

2018-01-01

We report on the direct ion beam synthesis of a delta-layer of indium oxide nanocrystals (In2O3-NCs) in silica matrices by using ultra-low energy ion implantation. The formation of the indium oxide phase can be explained by (i) the affinity of indium with oxygen, (ii) the generation of a high excess of oxygen recoils generated by the implantation process in the region where the nanocrystals are formed and (iii) the proximity of the indium-based nanoparticles with the free surface and oxidation from the air. Taking advantage of the selective diffusivity of implanted indium in SiO2 with respect to Si3N4, In2O3-NCs have been inserted in the SiO2 switching oxide of micrometric planar oxide-based resistive random access memory (OxRAM) devices fabricated using the nanodamascene process. Preliminary electrical measurements show switch voltage from high to low resistance state. The devices with In2O3-NCs have been cycled 5 times with identical operating voltages and RESET current meanwhile no switch has been observed for non implanted devices. This first measurement of switching is very promising for the concept of In2O3-NCs based OxRAM memories.

Production chain of CMS pixel modules

CERN Multimedia

2006-01-01

The pictures show the production chain of pixel modules for the CMS detector. Fig.1: overview of the assembly procedure. Fig.2: bump bonding with ReadOut Chip (ROC) connected to the sensor. Fig.3: glueing a raw module onto the baseplate strips. Fig.4: glueing of the High Density Interconnect (HDI) onto a raw module. Fig.5: pull test after heat reflow. Fig.6: wafer sensor processing, Indium evaporation.

Progress on TSV technology for Medipix3RX chip

Science.gov (United States)

Sarajlić, M.; Pennicard, D.; Smoljanin, S.; Fritzsch, T.; Zoschke, K.; Graafsma, H.

2017-12-01

The progress of Through Silicon Via (TSV) technology for Medipix3RX chip done at DESY is presented here. The goal of this development is to replace the wire bonds in X-ray detectors with TSVs, in order to reduce the dead area between detectors. We obtained the first working chips assembled together with Si based sensors for X-ray detection. The 3D integration technology, including TSV, Re-distribution layer deposition, bump bonding to the Si sensor and bump bonding to the carrier PCB, was done by Fraunhofer Institute IZM in Berlin. After assembly, the module was successfully tested by recording background radiation and making X-ray images of small objects. The active area of the Medipix3RX chip is 14.1 mm×14.1 mm or 256×256 pixels. During TSV processing, the Medipix3RX chip was thinned from 775 μm original thickness, to 130 μm. The diameter of the vias is 40 μm, and the pitch between the vias is 120 μm. A liner filling approach was used to contact the TSV with the RDL on the backside of the Medipix3RX readout chip.

NOAA TIFF Image - 50m Backscatter, Charleston Bump - Deep Coral Priority Areas - NOAA Ship Thomas Jefferson - (2007), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the backscatter intensity of the Charleston Bump off of the South Atlantic Bight,...

NOAA TIFF Image - 30m Slope, Charleston Bump - Deep Coral Priority Areas - R/V Maurice Ewing - (1997), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the backscatter intensity of the Charleston Bump off of the South Atlantic Bight,...

NOAA TIFF Image - 30m Backscatter, Charleston Bump - Deep Coral Priority Areas - NOAA Ship Thomas Jefferson - (2007), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the backscatter intensity of the Charleston Bump off of the South Atlantic Bight,...

NOAA TIFF Image - 30m Rugosity, Charleston Bump - Deep Coral Priority Areas - R/V Maurice Ewing - (1997), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the backscatter intensity of the Charleston Bump off of the South Atlantic Bight,...

Carbon Isotopes in Globular Clusters Down to the Bump in the Luminosity Function

Science.gov (United States)

Shetrone, Matthew D.

2003-03-01

We find that the 12C/13C ratio evolves from high values (>20) below the bump in the luminosity function (BLF) to near the equilibrium value of the CNO cycle above the BLF in the globular clusters (GCs) NGC 6528 and M4. This is the first time that the predicted decline of the 12C/13C ratios due to the extra mixing at the BLF is detected in a GC. In M4, a slight decline from 12C/13C = 10 just above the BLF at MV=+0.5 to 12C/13C = 4 at MV=-0.6 is detected, suggesting that some additional mixing may occur beyond the BLF in this cluster. Isotope ratios are measured and found to be constant in the GCs NGC 6553 and 47 Tucanae down to just above the BLF of those GCs. Based on observations made in part at the W. M. Keck Observatory by the Gemini staff, supported by the Gemini Observatory, which is operated by the Association of Universities of Research in Astronomy, Inc., on behalf of the international Gemini partnership of Argentina, Australia, Brazil, Canada, Chile, the UK, and the US. The W. M. Keck Observatory is operated as a scientific partnership among the California Institute of Technology, the University of California, and the National Aeronautics and Space Administration. The Observatory was made possible by the generous financial support of the W. M. Keck Foundation.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Science.gov (United States)

Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Indium phosphide space solar cell research: Where we are and where we are going

Science.gov (United States)

Jain, R. K.; Flood, D. J.; Weinberg, Irving

1995-01-01

Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

Standard test methods for chemical and spectrochemical analysis of nuclear-Grade silver-indium-cadmium alloys

CERN Document Server

American Society for Testing and Materials. Philadelphia

1990-01-01

1.1 These test methods cover procedures for the chemical and spectrochemical analysis of nuclear grade silver-indium-cadmium (Ag-In-Cd) alloys to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Silver, Indium, and Cadmium by a Titration Method 7-15 Trace Impurities by Carrier-Distillation Spectro- chemical Method 16-22 1.3 The values stated in SI units are to be regarded as the standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. For specific hazard and precautionary statements, see Section 5 and Practices E50. 7.1 This test method is applicable to the determination of silver, indium, and cadmium in alloys of approximately 80 % silver, 15 % indium, and 5 % cadmium used in nuclear reactor control r...

Far infrared through millimeter backshort-under-grid arrays

Science.gov (United States)

Allen, Christine A.; Abrahams, John; Benford, Dominic J.; Chervenak, James A.; Chuss, David T.; Staguhn, Johannes G.; Miller, Timothy M.; Moseley, S. Harvey; Wollack, Edward J.

2006-06-01

We are developing a large-format, versatile, bolometer array for a wide range of infrared through millimeter astronomical applications. The array design consists of three key components - superconducting transition edge sensor bolometer arrays, quarter-wave reflective backshort grids, and Superconducting Quantum Interference Device (SQUID) multiplexer readouts. The detector array is a filled, square grid of bolometers with superconducting sensors. The backshort arrays are fabricated separately and are positioned in the etch cavities behind the detector grid. The grids have unique three-dimensional interlocking features micromachined into the walls for positioning and mechanical stability. The ultimate goal of the program is to produce large-format arrays with background-limited sensitivity, suitable for a wide range of wavelengths and applications. Large-format (kilopixel) arrays will be directly indium bump bonded to a SQUID multiplexer circuit. We have produced and tested 8×8 arrays of 1 mm detectors to demonstrate proof of concept. 8×16 arrays of 2 mm detectors are being produced for a new Goddard Space Flight Center instrument. We have also produced models of a kilopixel detector grid and dummy multiplexer chip for bump bonding development. We present detector design overview, several unique fabrication highlights, and assembly technologies.

NOAA TIFF Image - 30m Rugosity, Charleston Bump - Deep Coral Priority Areas - R/V Maurice Ewing - (1997), UTM 17N NAD83

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

Pyrolytically grown indium sulfide sensitized zinc oxide nanowires for solar water splitting

Energy Technology Data Exchange (ETDEWEB)

Komurcu, Pelin; Can, Emre Kaan; Aydin, Erkan; Semiz, Levent [Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Gurol, Alp Eren; Alkan, Fatma Merve [Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Sankir, Mehmet; Sankir, Nurdan Demirci [Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, 06560 Ankara (Turkey)

2015-11-15

Zinc oxide (ZnO) nanowires, sensitized with spray pyrolyzed indium sulfide, were obtained by chemical bath deposition. The XRD analysis indicated dominant evolution of hexagonal ZnO phase. Significant gain in photoelectrochemical current using ZnO nanowires is largely accountable to enhancement of the visible light absorption and the formation of heterostructure. The maximum photoconversion efficiency of 2.77% was calculated for the indium sulfide sensitized ZnO nanowire photoelectrodes. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Indium-111 platelet scintigraphy in carotid disease

International Nuclear Information System (INIS)

Branchereau, A.; Bernard, P.J.; Ciosi, G.; Bazan, M.; de Laforte, C.; Elias, A.; Bouvier, J.L.

1988-01-01

Forty-five patients (35 men, 10 women) undergoing carotid surgery had Indium-111 platelet scintigraphy as part of their preoperative work-up. Imaging was performed within three hours after injection of the Indium-111. A second series of views was obtained 24 hours later and repeated at 24 hour intervals for two days. Of 54 scintigrams, 22 were positive and 32 negative. Positive results were defined as a twofold or more increase in local activity on a visualized carotid after 24 hours. The sensitivity of the method was 41%, intraoperatively, and the specificity, 100%. The low sensitivity places this method behind sonography and duplex-scanning for screening patients for surgery. We believe that indications for platelet scintigraphy are limited to: 1. Repeated transient ischemic attacks in the same territory with minimal lesions on arteriography and non-homogeneous plaque on duplex scan; 2. Symptomatic patients being treated medically as a possible argument for surgery; 3. Determining therapeutic policy for patients having experienced a transient ischemic attack with a coexisting intracardiac thrombus

Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

KAUST Repository

Lee, Kyu-Sung; Lim, Jong-Wook; Kim, Han-Ki; Alford, T. L.; Jabbour, Ghassan E.

2012-01-01

A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive

Synthesis of indium nanoparticles at ambient temperature; simultaneous phase transfer and ripening

Energy Technology Data Exchange (ETDEWEB)

Aghazadeh Meshgi, Mohammad; Kriechbaum, Manfred [Graz University of Technology, Institute of Inorganic Chemistry (Austria); Biswas, Subhajit; Holmes, Justin D., E-mail: j.holmes@ucc.ie [University College Cork, Materials Chemistry and Analysis Group, Department of Chemistry and the Tyndall National Institute (Ireland); Marschner, Christoph, E-mail: christoph.marschner@tugraz.at [Graz University of Technology, Institute of Inorganic Chemistry (Austria)

2016-12-15

The synthesis of size-monodispersed indium nanoparticles via an innovative simultaneous phase transfer and ripening method is reported. The formation of nanoparticles occurs in a one-step process instead of well-known two-step phase transfer approaches. The synthesis involves the reduction of InCl{sub 3} with LiBH{sub 4} at ambient temperature and although the reduction occurs at room temperature, fine indium nanoparticles, with a mean diameter of 6.4 ± 0.4 nm, were obtained directly in non-polar n-dodecane. The direct synthesis of indium nanoparticles in n-dodecane facilitates their fast formation and enhances their size-monodispersity. In addition, the nanoparticles were highly stable for more than 2 months. The nanoparticles were characterised by dynamic light scattering (DLS), small angle X-ray scattering (SAXS), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared (FT-IR) spectroscopy to determine their morphology, structure and phase purity.

Indium recovery from acidic aqueous solutions by solvent extraction with D2EHPA: a statistical approach to the experimental design

Directory of Open Access Journals (Sweden)

Fortes M.C.B.

2003-01-01

Full Text Available This experimental work presents the optimization results of obtaining a high indium concentration solution and minimum iron poisoning by solvent extraction with D2EHPA solubilized in isoparaffin and exxsol. The variables studied in the extraction step were D2EHPA concentration, acidity of the aqueous phase and time of contact between phases. Different hydrochloric and sulfuric acid concentrations were studied for the stripping step. The optimum experimental conditions resulted in a solution with 99% indium extraction and less than 4% iron. The construction of a McCabe-Thiele diagram indicated two theoretical countercurrent stages for indium extraction and at least six stages for indium stripping. Finally, the influence of associated metals found in typical sulfate leach liquors from zinc plants was studied. Under the experimental conditions for maximum indium extraction, 96% indium extraction was obtained, iron extraction was about 4% and no Ga, Cu and Zn were co-extracted.

New compounds of indium(III) with 2,4'-bipyridine

International Nuclear Information System (INIS)

Czakis-Sulikowska, D.; Kaluzna-Czaplinska, J.

2000-01-01

The aim of present work was to obtain complexes of indium(III) with 2,4'-bipyridine and examine some of their physico-chemical properties (solubility, molar conductivity in methanol, IR spectra and thermal analysis)

Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

International Nuclear Information System (INIS)

Subrahmanyam, A.; Barik, U.K.

2006-01-01

Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10 0 -10 -3 Ωcm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

Energy Technology Data Exchange (ETDEWEB)

Subrahmanyam, A; Barik, U K [Indian Institute of Technology Madras, Semiconductor Physics Laboratory, Department of Physics, Chennai (India)

2006-07-15

Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10{sup 0}-10{sup -3} {omega}cm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

TEM and XANES study of MOVPE grown InAIN layers with different indium content

International Nuclear Information System (INIS)

Kret, S; Wolska, A; Klepka, M T; Letrouit, A; Ivaldi, F; Szczepańska, A; Carlin, J-F; Kaufmann, N A K; Grandjean, N

2011-01-01

We present structure and spatially resolved composition studies by TEM (Transmission Electron Microscopy) and XANES (X-ray Absorption Near Edge Structure) of InAIN MOVPE (Metal-Organic Vapor Phase Epitaxy) epilayers containing 16-27 at% of indium. Investigations of the In L 3 edge by synchrotron radiation absorption show a significant change of the post-edge structure depending on the indium content. We attribute this to the solubility limit and phase separation in this system. Our measurements suggest that the critical composition is 18% for our growth conditions. HRTEM cross-sectional and EDX investigations confirm such phase separation as well as the changing of the structure from 2D growth to columnar like growth for the sample with the highest indium content.

Indium sulfide buffer layers deposited by dry and wet methods

International Nuclear Information System (INIS)

Asenjo, B.; Sanz, C.; Guillen, C.; Chaparro, A.M.; Gutierrez, M.T.; Herrero, J.

2007-01-01

Indium sulfide (In 2 S 3 ) thin films have been deposited on amorphous glass, glass coated by tin oxide (TCO) and crystalline silicon substrates by two different methods: modulated flux deposition (MFD) and chemical bath deposition (CBD). Composition, morphology and optical characterization have been carried out with Scanning Electron Microscopy (SEM), IR-visible-UV Spectrophotometry, X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectrometer. Different properties of the films have been obtained depending on the preparation techniques. With MFD, In 2 S 3 films present more compact and homogeneous surface than with CBD. Films deposited by CBD present also indium oxide in their composition and higher absorption edge values when deposited on glass

[Mechanism of renal elimination of 2 elements of group IIIA of the periodic table : aluminum and indium].

Science.gov (United States)

Galle, P

1981-01-05

Aluminium and indium, two elements of group IIIA of the periodic table, are concentrated by the kidney inside lysosomes of proximal tubule cell. In these lysosomes, aluminium and indium are precipitated as non-soluble phosphate salts and these precipitates are then expelled in the tubular lumen and eliminated with the urinary flow. These data have been visualized by analytical microscopy (ion microscopy and X ray microanalysis). Local acid phosphatases are assumed to permit the concentration of aluminium and indium salts inside the lysosomes.

Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Biswajit; Kumar, Kamlesh; Singh, Balwant Kr; Banerjee, Pushan; Das, Subrata, E-mail: neillohit@yahoo.co.in

2014-11-30

Graphical abstract: - Highlights: • CdS film grown on indium coated glass substrates via CBD and subsequent annealing. • Disappearance of the indium (1 1 2) peak confirms interdiffusion at 300 °C. • SIMS indicates the subsequent interdiffusion at progressively higher temperature. • Composite In–CdS layer showed lower photosensitivity compared to pure CdS. - Abstract: In the present work attempts were made to synthesize indium doped CdS films by fabricating In/CdS bilayers using CBD-CdS on vacuum evaporated In thin films and subsequent air annealing. 135 nm CdS films were grown onto 20 nm and 35 nm indium coated glass substrate employing chemical bath deposition technique. The In/CdS bilayers thus formed were subjected to heat treatment at the temperatures between 200 and 400 °C for 4 min in the muffle furnace to facilitate indium to diffuse into the CdS films. XRD pattern ascertained no noticeable shift in lattice constant implying grain boundary metal segregation, while secondary ion mass spectrometry indicated the diffusion profile of indium into CdS matrices. Mass spectrometry results showed that substantial diffusion of indium had been taken place within CdS at 400 °C. Dark and photocurrent with different illumination time were measured to ascertain the photosensitivity of pure and composite CdS films.

Isotope release cytotoxicity assay applicable to human tumors: the use of 111-indium

Energy Technology Data Exchange (ETDEWEB)

Frost, P; Wiltrout, R; Maciorowski, Z; Rose, N R

1977-01-01

We have demonstrated that human tumors can be labelled efficiently with the 111indium-oxine chelate. Subsequently, this isotope can be released by cytotoxic lymphoid cells. Both natural and induced cytotoxicity can be demonstrated utilizing this isotope release method. Because of the slow spontaneous release of 111indium and its efficient labelling of human tumor cells, this isotope release assay can be utilized in long-term cytotoxic assays in the study of human tumor immunology.

Improved field emission from indium decorated multi-walled carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Sreekanth, M.; Ghosh, S., E-mail: santanu1@physics.iitd.ernet.in; Biswas, P.; Kumar, S.; Srivastava, P.

2016-10-15

Graphical abstract: Improved field emission properties have been achieved for Indium (In) decorated MWCNTs and are shown using the schematic of field emission set up with In/CNT cathode, and a plot of J-E characteristics for pristine and In decorated CNTs. - Highlights: • Field emission (FE) properties have been studied for the first time from Indium (In) decorated MWCNT films. • Observed increased density of states near the Fermi level for In decorated films. • Superior field emission properties have been achieved for In decorated CNT films. - Abstract: Multi-walled carbon nanotube (MWCNT) films were grown using thermal chemical vapor deposition (T-CVD) process and were decorated with indium metal particles by thermal evaporation technique. The In metal particles are found to get oxidized. The In decorated films show 250% enhancement in the FE current density, lower turn-on and threshold fields, and better temporal stability as compared to their undecorated counterpart. This improvement in field emission properties is primarily attributed to increased density of states near the Fermi level. The presence of O 2p states along with a small contribution from In 5s states results in the enhancement of density of states in the vicinity of the Fermi level.

Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions

Energy Technology Data Exchange (ETDEWEB)

Lo, Yun-Yo [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Huang, Man-Fang, E-mail: mfhuang@cc.ncue.edu.tw [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Chiang, Yu-Chia [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Fan, Jenn-Chyuan [Department of Electronic Engineering, Nan Kai University of Technology, Nantou, Taiwan, ROC (China)

2015-08-31

This study investigated the influence of indium accumulation happened on the surface of a-plane InN grown under different growth conditions. Three different growth rates with N/In ratio from stoichiometric to N-rich were used to grow a-plane InN epifilms on GaN-buffered r-plane sapphires by plasma-assisted molecular beam epitaxy. When a-plane InN was grown above 500 °C with a high growth rate, abnormally high in-situ reflectivity was found during a-plane InN growth, which was resulted from indium accumulation on surface owing to In-N bonding difficulty on certain crystal faces of a-plane InN surface. Even using excess N-flux, indium accumulation could still be found in initial growth and formed 3-dimension-like patterns on a-plane InN surface which resulted in rough surface morphology. By reducing growth rate, surface roughness was improved because indium atoms could have more time to migrate to suitable position. Nonetheless, basal stacking fault density and crystal anisotropic property were not affected by growth rate. - Highlights: • High growth temperature could cause indium accumulation on a-plane InN surface. • Indium accumulation on a-plane InN surface causes rough surface. • Low growth rate improves surface morphology but not crystal quality.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Energy Technology Data Exchange (ETDEWEB)

Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide

NARCIS (Netherlands)

Morales-Masis, M.; Dauzou, F.; Jeangros, Q.; Dabirian, A.; Lifka, H.; Gierth, R.; Ruske, M.; Moet, D.; Hessler-Wyser, A.; Ballif, C.

2016-01-01

Flexible large-area organic light-emitting diodes (OLEDs) require highly conductive and transparent anodes for efficient and uniform light emission. Tin-doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are

Investigation of turbulent boundary layer flow over 2D bump using highly resolved large eddy simulation

DEFF Research Database (Denmark)

Cavar, Dalibor; Meyer, Knud Erik

2011-01-01

A large eddy simulation (LES) study of turbulent non-equilibrium boundary layer flow over 2 D Bump, at comparatively low Reynolds number Reh = U∞h/ν = 1950, was conducted. A well-known LES issue of obtaining and sustaining turbulent flow inside the computational domain at such low Re, is addresse...... partially confirm a close interdependency between generation and evolution of internal layers and the abrupt changes in the skin friction, previously reported in the literature. © 2011 American Society of Mechanical Engineers....

Phosphasalen indium complexes showing high rates and isoselectivities in rac-lactide polymerizations

Energy Technology Data Exchange (ETDEWEB)

Myers, Dominic; White, Andrew J.P. [Department of Chemistry, Imperial College London (United Kingdom); Forsyth, Craig M. [School of Chemistry, Monash University, Clayton, VIC (Australia); Bown, Mark [CSIRO Manufacturing, Bayview Avenue, Clayton, VIC (Australia); Williams, Charlotte K. [Department of Chemistry, Oxford University (United Kingdom)

2017-05-02

Polylactide (PLA) is the leading bioderived polymer produced commercially by the metal-catalyzed ring-opening polymerization of lactide. Control over tacticity to produce stereoblock PLA, from rac-lactide improves thermal properties but is an outstanding challenge. Here, phosphasalen indium catalysts feature high rates (30±3 m{sup -1} min{sup -1}, THF, 298 K), high control, low loadings (0.2 mol %), and isoselectivity (P{sub i}=0.92, THF, 258 K). Furthermore, the phosphasalen indium catalysts do not require any chiral additives. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of fabrication conditions on the properties of indium tin oxide powders

International Nuclear Information System (INIS)

Xie Wei

2008-01-01

This paper reports that indium tin oxide (ITO) crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity in and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350°C and Sn doping content 6∼8wt% are determined. The application of ITO in the military camouflage field is proposed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

The effect of NaCl on room-temperature-processed indium oxide nanoparticle thin films for printed electronics

Energy Technology Data Exchange (ETDEWEB)

Häming, M., E-mail: Marc.Haeming@yahoo.de [Karlsruhe Institute of Technology (KIT), Institute for Photon Science and Synchrotron Radiation (IPS), D-76344 Eggenstein-Leopoldshafen (Germany); Baby, T.T. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Garlapati, S.K. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Technische Universität Darmstadt, KIT-TUD Joint Research Laboratory for Nanomaterials, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Krause, B. [Karlsruhe Institute of Technology (KIT), Institute for Photon Science and Synchrotron Radiation (IPS), D-76344 Eggenstein-Leopoldshafen (Germany); Hahn, H. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Technische Universität Darmstadt, KIT-TUD Joint Research Laboratory for Nanomaterials, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Karlsruhe Institute of Technology (KIT), Helmholtz Institute Ulm, Albert-Einstein-Allee 11, 89081 Ulm (Germany); Dasgupta, S. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Weinhardt, L.; Heske, C. [Karlsruhe Institute of Technology (KIT), Institute for Photon Science and Synchrotron Radiation (IPS), D-76344 Eggenstein-Leopoldshafen (Germany); Karlsruhe Institute of Technology (KIT), Institute for Chemical Technology and Polymer Chemistry (ITCP), 76128 Karlsruhe (Germany); University of Nevada, Las Vegas (UNLV), Department of Chemistry and Biochemistry, Las Vegas, NV 89154-4003 (United States)

2017-02-28

Highlights: • The effect of NaCl ink additive on indium oxide nanoparticle thin films is analyzed. • NaCl changes the thin film morphology and its chemical structure. • NaCl decomposes the nanoparticle shell leading to lower charge transport barriers. • Explanation of the increase in field effect mobility from 1 to >12 cm{sup 2}/Vs. • Understanding of the ink drying process and the nanoparticle agglomeration behavior. - Abstract: One of the major challenges in flexible electronics industry is the fabrication of high-mobility field-effect transistors (FETs) at ambient conditions and on inexpensive polymer substrates compatible with roll-to-roll printing technology. In this context, a novel and general route towards room-temperature fabrication of printed FETs with remarkably high field-effect mobility (μ{sub FET}) above 12 cm{sup 2}/Vs has recently been developed. A detailed understanding of the chemical structure of the involved nanoparticle (NP) thin films, prepared by chemical flocculation, is essential for further optimization of the charge transport properties of such devices. In this study, we thus analyze indium oxide NP thin films with and without NaCl additive using x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). It is demonstrated that the introduction of a sodium chloride additive to the ink leads to a strongly altered film morphology and a modification of the NP shell. The results suggest that, as a consequence of the additive, the charge-transport barriers between individual indium oxide NPs are lowered, facilitating long-range charge percolation paths despite the presence of a significant concentration of carbonaceous residues.

Preparation and nonlinear optical properties of indium nanocrystals in sodium borosilicate glass by the sol–gel route

International Nuclear Information System (INIS)

Zhong, Jiasong; Xiang, Weidong; Zhao, Haijun; Chen, Zhaoping; Liang, Xiaojuan; Zhao, Wenguang; Chen, Guoxin

2012-01-01

Graphical abstract: The sodium borosilicate glass doped with indium nanocrystals have been successfully prepared by sol–gel methods. And the indium nanocrystals in tetragonal crystal system have formed uniformly in the glass, and the average diameter of indium nanocrystals is about 30 nm. The third-order optical nonlinear refractive index γ, absorption coefficient β, and susceptibility χ (3) of the glass are determined to be −4.77 × 10 −16 m 2 /W, 2.67 × 10 −9 m/W, and 2.81 × 10 −10 esu, respectively. Highlights: ► Indium nanocrystals embedded in glass matrix have been prepared by sol–gel route. ► The crystal structure and composition are investigated by XRD and XPS. ► Size and distribution of indium nanocrystals is determined by TEM. ► The third-order optical nonlinearity is investigated by using Z-scan technique. -- Abstract: The sodium borosilicate glass doped with indium nanocrystals have been successfully prepared by sol–gel route. The thermal stability behavior of the stiff gel is investigated by thermogravimetric (TG) and differential thermal (DTA) analysis. The crystal structure of the glass is characterized by X-ray powder diffraction (XRD). Particle composition is determined by X-ray photoelectron spectroscopy (XPS). Size and distribution of the nanocrystals are characterized by transmission electron microscopy (TEM) as well as high-resolution transmission electron microscopy (HRTEM). Results show that the indium nanocrystals in tetragonal crystal structure have formed in glass, and the average diameter is about 30 nm. Further, the glass is measured by Z-scan technique to investigate the nonlinear optical (NLO) properties. The third-order NLO coefficient χ (3) of the glass is determined to be 2.81 × 10 −10 esu. The glass with large third-order NLO coefficient is promising materials for applications in optical devices.

Aerodynamic Drag Reduction for a Generic Truck Using Geometrically Optimized Rear Cabin Bumps

Directory of Open Access Journals (Sweden)

Abdellah Ait Moussa

2015-01-01

Full Text Available The continuous surge in gas prices has raised major concerns about vehicle fuel efficiency, and drag reduction devices offer a promising strategy. In this paper, we investigate the mechanisms by which geometrically optimized bumps, placed on the rear end of the cabin roof of a generic truck, reduce aerodynamic drag. The incorporation of these devices requires proper choices of the size, location, and overall geometry. In the following analysis we identify these factors using a novel methodology. The numerical technique combines automatic modeling of the add-ons, computational fluid dynamics and optimization using orthogonal arrays, and probabilistic restarts. Numerical results showed reduction in aerodynamic drag between 6% and 10%.

Determination of indium in geological materials by electrothermal-atomization atomic absorption spectrometry with a tungsten-impregnated graphite furance

Science.gov (United States)

Zhou, L.; Chao, T.T.; Meier, A.L.

1984-01-01

The sample is fused with lithium metaborate and the melt is dissolved in 15% (v/v) hydrobromic acid. Iron(III) is reduced with ascorbic acid to avoid its coextraction with indium as the bromide into methyl isobutyl ketone. Impregnation of the graphite furnace with sodium tungstate, and the presence of lithium metaborate and ascorbic acid in the reaction medium improve the sensitivity and precision. The limits of determination are 0.025-16 mg kg-1 indium in the sample. For 22 geological reference samples containing more than 0.1 mg kg-1 indium, relative standard deviations ranged from 3.0 to 8.5% (average 5.7%). Recoveries of indium added to various samples ranged from 96.7 to 105.6% (average 100.2%). ?? 1984.

Indium-111 labelled leucocyte scintigraphy in the diagnosis of inflammatory disease

International Nuclear Information System (INIS)

Roevekamp, M.H.

1982-01-01

The purpose of this study was to evaluate the diagnostic usefulness of indium-111 oxinate labelled autologous leucocytes in inflammatory disease. Chapter I provides an outline of the theoretical aspects of leucocyte labelling with indium-111 oxinate, as well as giving a description of the labelling method and scintigraphic technique and of the in-vitro and in-vivo studies performed to evaluate the method. In Chapter II details are given of the initial results obtained in a pilot study. A high false-negative rate led to modification of the labelling technique. The results obtained in patients suspected of intra-abdominal or retroperitoneal located inflammatory lesions are described in Chapter III. Chapter IV contains the description of an indium-111-leucocyte-99mTc-Sn-colloid computer-assisted subtraction technique for a better evaluation of patients suspected of an upper-abdominal inflammatory process. In Chapter V the study performed in patients after arterial reconstructive surgery is described, and the results obtained in patients suspected of an infected orthopaedic prosthesis are given in Chapter VI. Finally the characteristics of the different types of inflammatory responses is reviewed. (Auth.)

Studies on preparation and characterization of indium doped zinc ...

Indian Academy of Sciences (India)

Unknown

The preparation of indium doped zinc oxide films is discussed. ... XRD studies have shown a change in preferential orientation from (002) to .... at grain boundaries in the form of In(OH)3, hindering the .... Angular substrate to nozzle distance.

Prospects and performance limitations for Cu-Zn-Sn-S-Se photovoltaic technology.

Science.gov (United States)

Mitzi, David B; Gunawan, Oki; Todorov, Teodor K; Barkhouse, D Aaron R

2013-08-13

While cadmium telluride and copper-indium-gallium-sulfide-selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr⁻¹ production level, highlighting the promise of these rapidly growing thin-film technologies, reliance on the heavy metal cadmium and scarce elements indium and tellurium has prompted concern about scalability towards the terawatt level. Despite recent advances in structurally related copper-zinc-tin-sulfide-selenide (CZTSSe) absorbers, in which indium from CIGSSe is replaced with more plentiful and lower cost zinc and tin, there is still a sizeable performance gap between the kesterite CZTSSe and the more mature CdTe and CIGSSe technologies. This review will discuss recent progress in the CZTSSe field, especially focusing on a direct comparison with analogous higher performing CIGSSe to probe the performance bottlenecks in Earth-abundant kesterite devices. Key limitations in the current generation of CZTSSe devices include a shortfall in open circuit voltage relative to the absorber band gap and secondarily a high series resistance, which contributes to a lower device fill factor. Understanding and addressing these performance issues should yield closer performance parity between CZTSSe and CdTe/CIGSSe absorbers and hopefully facilitate a successful launch of commercialization for the kesterite-based technology.

Synthesis of indium oxide cubic crystals by modified hydrothermal route for application in room temperature flexible ethanol sensors

International Nuclear Information System (INIS)

Seetha, M.; Meena, P.; Mangalaraj, D.; Masuda, Yoshitake; Senthil, K.

2012-01-01

Highlights: ► For the first time HMT is used in the preparation of indium oxide. ► HMT itself acts as base for the precursor and results in cubic indium hydroxide. ► Modified hydrothermal route used for the preparation of cubic indium oxide crystals. ► As a new approach a composite film synthesized with prepared indium oxide. ► Film showed good response to ethanol vapours with quick response and recovery times. - Abstract: Indium oxide cubic crystals were prepared by using hexamethylenetetramine and indium chloride without the addition of any structure directing agents. The chemical route followed in the present work was a modified hydrothermal synthesis. The average crystallite size of the prepared cubes was found to be 40 nm. A blue emission at 418 nm was observed at room temperature when the sample was excited with a 380 nm Xenon lamp. This emission due to oxygen vacancies made the material suitable for gas sensing applications. The synthesized material was made as a composite film with polyvinyl alcohol which was more flexible than the films prepared on glass substrates. This flexible film was used as a sensing element and tested with ethanol vapours at room temperature. The film showed fast response as well as recovery to ethanol vapours with a sensor response of about 1.4 for 100 ppm of the gas.

Soldering-induced Cu diffusion and intermetallic compound formation between Ni/Cu under bump metallization and SnPb flip-chip solder bumps

Science.gov (United States)

Huang, Chien-Sheng; Jang, Guh-Yaw; Duh, Jenq-Gong

2004-04-01

Nickel-based under bump metallization (UBM) has been widely used as a diffusion barrier to prevent the rapid reaction between the Cu conductor and Sn-based solders. In this study, joints with and without solder after heat treatments were employed to evaluate the diffusion behavior of Cu in the 63Sn-37Pb/Ni/Cu/Ti/Si3N4/Si multilayer structure. The atomic flux of Cu diffused through Ni was evaluated from the concentration profiles of Cu in solder joints. During reflow, the atomic flux of Cu was on the order of 1015-1016 atoms/cm2s. However, in the assembly without solder, no Cu was detected on the surface of Ni even after ten cycles of reflow. The diffusion behavior of Cu during heat treatments was studied, and the soldering-process-induced Cu diffusion through Ni metallization was characterized. In addition, the effect of Cu content in the solder near the solder/intermetallic compound (IMC) interface on interfacial reactions between the solder and the Ni/Cu UBM was also discussed. It is evident that the (Cu,Ni)6Sn5 IMC might form as the concentration of Cu in the Sn-Cu-Ni alloy exceeds 0.6 wt.%.

Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

KAUST Repository

Lee, Kyu-Sung

2012-05-22

A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive layer of poly (3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester, a power conversion efficiency of 3.67% was obtained, a value comparable to devices having sputtered ITO electrode. Surface roughness and optical efficiency are improved when using the mixed TiO2−x–ITO electrode. The consumption of less indium allows for lower fabrication cost of such mixed thin filmelectrode.

Small lead and indium inclusions in aluminium

International Nuclear Information System (INIS)

Johnson, E.; Hjemsted, K.; Schmidt, B.; Bourdelle, K.K.; Johansen, A.; Andersen, H.H.; Sarholt-Kristensen, L.

1992-01-01

This paper reports implantation of lead or indium into aluminum results in spontaneous phase separation and formation of lead or indium precipitates. The precipitates grow in topotactical alignment with the matrix, giving TEM images characterized by moire fringes. The size and density of the precipitates increase with increasing fluence until coalescence begins to occur. Implantation at elevated temperatures lead to formation of large precipitates with well developed facets. This is particularly significant for implantation above the bulk melting point of the implanted species. Melting and solidification have been followed by in-situ TEM heating and cooling experiments. Superheating up to ∼50 K above the bulk melting point has been observed, and the largest inclusions melt first. Melting is associated with only partial loss of facetting of the largest inclusion. Initial growth of the inclusions occurs by trapping of atoms retained in supersaturated solution. Further growth occurs by coalescence of neighboring inclusion in the liquid phase. Solidification is accompanied by a strong undercooling ∼30 K below the bulk melting point, where the smallest inclusions solidify first. Solidification is characterized by spontaneous restoration of the facets and the topotactical alignment

Drivers and Constraints of Critical Materials Recycling: The Case of Indium

Directory of Open Access Journals (Sweden)

Jenni Ylä-Mella

2016-11-01

Full Text Available Raw material criticality studies are receiving increasing attention because an increasing number of elements of great economic importance, performing essential functions face high supply risks. Scarcity of key materials is a potential barrier to large-scale deployment of sustainable energy and clean-tech technologies as resorting to several critical materials. As physical scarcity and geopolitical issues may present a barrier to the supply of critical metals, recycling is regarded as a possible solution to substitute primary resources for securing the long-term supply of critical metals. In this paper, the main drivers and constraints for critical materials recycling are analyzed from literature, considering indium as a case study of critical materials. This literature review shows that waste electrical and electronic equipment (WEEE could be a future source of critical metals; however, the reduction of dissipation of critical materials should have much higher priority. It is put forward that more attention should be paid to sustainable management of critical materials, especially improved practices at the waste management stage. This calls for not only more efficient WEEE recycling technologies, but also revising priorities in recycling strategies.

Influence of indium concentration and substrate temperature on the physical characteristics of chemically sprayed ZnO:In thin films deposited from zinc pentanedionate and indium sulfate

International Nuclear Information System (INIS)

Castaneda, L; Morales-Saavedra, O G; Cheang-Wong, J C; Acosta, D R; Banuelos, J G; Maldonado, A; Olvera, M de la L

2006-01-01

Chemically sprayed indium-doped zinc oxide thin films (ZnO:In) were deposited on glass substrates starting from zinc pentanedionate and indium sulfate. The influence of both the dopant concentration in the starting solution and the substrate temperature on the transport, morphology, composition, linear and nonlinear optical (NLO) properties of the ZnO:In thin films were studied. The structure of all the ZnO:In thin films was polycrystalline, and variation in the preferential growth with the indium content in the solution was observed: from an initial (002) growth in films with low In content, switching to a predominance of (101) planes for intermediate dopant regime, and finally turning to a (100) growth for heavily doped films. The crystallite size was found to decrease with doping concentration and range from 36 to 23 nm. The film composition and the dopant concentration were determined by Rutherford backscattering spectrometry; these results showed that the films are almost stoichiometric ZnO. The optimum deposition conditions leading to conductive and transparent ZnO:In thin films were also found. In this way a resistivity of 4 x 10 -3 Ω cm and an average transmittance in the visible spectra of 85%, with a (101) preferential growth, were obtained in optimized ZnO:In thin films

IRON OPACITY BUMP CHANGES THE STABILITY AND STRUCTURE OF ACCRETION DISKS IN ACTIVE GALACTIC NUCLEI

Energy Technology Data Exchange (ETDEWEB)

Jiang, Yan-Fei [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Davis, Shane W. [Department of Astronomy, University of Virginia, P.O. Box 400325, Charlottesville, VA 22904-4325 (United States); Stone, James M. [Department of Astrophysical Sciences, Princeton University, Princeton, NJ 08544 (United States)

2016-08-10

Accretion disks around supermassive black holes have regions where the Rosseland mean opacity can be larger than the electron scattering opacity due to the large number of bound–bound transitions in iron. We study the effects of this iron opacity “bump” on the thermal stability and vertical structure of radiation-pressure-dominated accretion disks, utilizing three-dimensional radiation magnetohydrodynamic (MHD) simulations in the local shearing box approximation. The simulations self-consistently calculate the heating due to MHD turbulence caused by magneto-rotational instability and radiative cooling by using the radiative transfer module based on a variable Eddington tensor in Athena. For a 5 × 10{sup 8} solar mass black hole with ∼3% of the Eddington luminosity, a model including the iron opacity bump maintains its structure for more than 10 thermal times without showing significant signs of thermal runaway. In contrast, if only electron scattering and free–free opacity are included as in the standard thin disk model, the disk collapses on the thermal timescale. The difference is caused by a combination of (1) an anti-correlation between the total optical depth and the midplane pressure, and (2) enhanced vertical advective energy transport. These results suggest that the iron opacity bump may have a strong impact on the stability and structure of active galactic nucleus (AGN) accretion disks, and may contribute to a dependence of AGN properties on metallicity. Since this opacity is relevant primarily in UV emitting regions of the flow, it may help to explain discrepancies between observation and theory that are unique to AGNs.

Advanced characterization techniques of nonuniform indium distribution within InGaN/GaN heterostructures grown by MOCVD

International Nuclear Information System (INIS)

Lu, D.; Florescu, D.I.; Lee, D.S.; Ramer, J.C.; Parekh, A.; Merai, V.; Li, S.; Begarney, M.J.; Armour, E.A.; Gardner, J.J.

2005-01-01

Nonuniform indium distribution within InGaN/GaN single quantum well (SQW) structures with nanoscale islands grown by metalorganic chemical vapor deposition (MOCVD) have been characterized by advanced characterization techniques. Robinson backscattered electron (BSE) measurements show cluster-like BSE contrast of high brightness regions, which are not centered at small dark pits in a SQW structure of spiral growth mode. By comparing with the secondary electron (SE) images, the bright cluster areas from the BSE images were found to have higher indium content compared to the surrounding dark areas. Temperature dependant photoluminescence (PL) measurement shows typical ''S-shape'' curve, which shows good correlation with nonuniform indium distribution from BSE measurement. Optical evaluation of the samples show increased PL slope efficiency of the spiral mode SQW, which can be attributed to the presence of Indium inhomogeneities. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide

International Nuclear Information System (INIS)

Tanaka, Akiyo

2004-01-01

Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles. However, available data indicate these semiconductor materials can be toxic in animals. Although acute and chronic toxicity of the lung, reproductive organs, and kidney are associated with exposure to these semiconductor materials, in particular, chronic toxicity should pay much attention owing to low solubility of these materials. Between InAs, GaAs, and AlGaAs, InAs was the most toxic material to the lung followed by GaAs and AlGaAs when given intratracheally. This was probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials, such as indium, gallium, or aluminium, and not arsenic itself. It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect. Although there is no evidence of the carcinogenicity of InAs or AlGaAs, GaAs and InP, which are semiconductor materials, showed the clear evidence of carcinogenic potential. It is necessary to pay much greater attention to the human exposure of semiconductor materials

Determination of trace amounts of indium in some sediments by means of coprecipitation with zirconium hydroxide and differential pulse anodic stripping voltammetry

International Nuclear Information System (INIS)

Yoshimura, Wataru; Uzawa, Atushi; Hong Luxin.

1994-01-01

Indium in some sediments was determined by means of coprecipitation and differential pulse anodic stripping voltammetry. The analytical procedure was as follows. Fifty milliliters of distilled water is added to 10 ml of sample solution containing 0.04 g of sediment. Then, constant amounts of indium standard solution and 1 ml of zirconium oxychloride solution are added and the pH adjusted to 8.8 with ammonia water (1:2). The precipitate is separated by filtration and then dissolved in 25 ml of 4 M hydrochloric acid. After 1 ml of 5% KCNS solution is added, this solution is diluted to 50 ml with distilled water. A portion of this solution is employed for the determination of indium. After bubbling nitrogen gas through the sample solution for 100 s it was pre-electrolyzed for 100 s. The potential was scanned from -0.9 V to -0.3 Vυs. SCE for dissolution of indium ion. Indium ion was determined from the peak current of the voltammogram. The results are as follows: (1) Zirconium hydroxide was the most effective collector of indium when the pH was adjusted to 8.8 with ammonia water (1:2). (2) Iron (III) and cadmium ions were found to interfere with the determination of indium. (3) The analytical procedure took about 90 min and 0.01 ppm of indium in sample solution could be determined. (4) This method is applicable to the determination of indium in river bottom and sea floor sediment. (author)

Use of activable cations as tracers in groundwater hydrology. The case of DTPA-Indium

International Nuclear Information System (INIS)

Lumu, Badimbayi Matu.

1978-01-01

The possibilities of EDTA, CDTA and DTPA metallic complexes use as activable groundwater, tracers are discussed. Indium, which has good nuclear caracteristics for activation analysis and forms complexes of great stability with polyamino carboxylic acid has been for Laboratory and field studies. For corporative studies, Rhodomine B, a fluorescent tracer have been studied together with Indium complexes. In laboratory retention studies have been carried with In-EDTA, Iodine 131 and Rhodomine B, as tracers and bentonite, zeolite 13X and Dowex-1 and Dowex-50 as sorbents. As field studies, drainage evolution flow and resident time distribution of tracers substances in water, have been carried, under artificial rain conditions realized by aspersion. Results from field studies showed good characteristics of Indium Complexes especially in very absorbent medium (argilaceous limon) where their restitution balance were superior to that of Rhodomine B

An optimized antibody-chelator conjugate for imaging of carcinoembryonic antigen with indium-111

International Nuclear Information System (INIS)

Sumerdon, G.A.; Rogers, P.E.; Lombardo, C.M.; Schnobrich, K.E.; Melvin, S.L.; Tribby, I.I.E.; Stroupe, S.D.; Johnson, D.K.; Hobart, E.D.

1990-01-01

A monoclonal antibody to carcinoembryonic antigen showing minimal cross-reactivity with blood cells and normal tissues was derivatized with benzylisothiocyanate derivatives of EDTA and DTPA. Seven chelators per immunoglobulin could be incorporated without loss of immunoreactivity. The resulting conjugates, labeled with indium-111, showed low liver uptake in animals. A cold kit, comprising the DTPA conjugate at a molarity of antibody bound chelator exceeding 1 x 10 -4 M, gave radiochemical yields of indium labeled antibody of ≥ 95% and was stable for 1 yr. (author)

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Science.gov (United States)

Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis

2015-03-01

Reduced electric field in semipolar (1122) GaN/InGaN heterostructures makes this orientation attractive for high efficiency light emitting diodes. In this work, we investigated indium incorporation in semipolar (1122) GaN grown by metal-organic chemical vapor deposition on planar m-plane sapphire substrates. Indium content in the semipolar material was compared with that in polar c-plane samples grown under the same conditions simultaneously side by side on the same holder. The investigated samples incorporated dual GaN/InGaN/GaN double heterostructures with 3nm wide wells. In order to improve optical quality, both polar and semipolar templates were grown using an in-situ epitaxial lateral overgrowth (ELO) technique. Indium incorporation efficiency was derived from the comparison of PL spectra measured on the semipolar and polar structures at the highest excitation density, which allowed us to minimize the effect of quantum confined Stark effect on the emission wavelength. Our data suggests increased indium content in the semipolar material by up to 3.0%, from 15% In in c- GaN to 18% In in (1122) GaN.

Efficient sub-Doppler transverse laser cooling of an indium atomic beam

International Nuclear Information System (INIS)

Kim, Jae-Ihn

2009-01-01

Laser cooled atomic gases and atomic beams are widely studied samples in experimental research in atomic and optical physics. For the application of ultra cold gases as model systems for e.g. quantum many particle systems, the atomic species is not very important. Thus this field is dominated by alkaline, earthalkaline elements which are easily accessible with conventional laser sources and have convenient closed cooling transition. On the other hand, laser cooled atoms may also be interesting for technological applications, for instance for the creation of novel materials by atomic nanofabrication (ANF). There it will be important to use technologically relevant materials. As an example, using group III atoms of the periodical table in ANF may open a route to generate fully 3D structured composite materials. The minimal requirement in such an ANF experiment is the collimation of an atomic beam which is accessible by one dimensional laser cooling. In this dissertation, I describe transverse laser cooling of an Indium atomic beam. For efficient laser cooling on a cycling transition, I have built a tunable, continuous-wave coherent ultraviolet source at 326 nm based on frequency tripling. For this purpose, two independent high power Yb-doped fiber amplifiers for the generation of the fundamental radiation at λ ω = 977 nm have been constructed. I have observed sub-Doppler transverse laser cooling of an Indium atomic beam on a cycling transition of In by introducing a polarization gradient in the linear-perpendicular-linear configuration. The transverse velocity spread of a laser-cooled In atomic beam at full width at half maximum was achieved to be 13.5±3.8 cm/s yielding a full divergence of only 0.48 ± 0.13 mrad. In addition, nonlinear spectroscopy of a 3-level, Λ-type level system driven by a pump and a probe beam has been investigated in order to understand the absorption line shapes used as a frequency reference in a previous two-color spectroscopy experiment

Efficient sub-Doppler transverse laser cooling of an indium atomic beam

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae-Ihn

2009-07-23

Laser cooled atomic gases and atomic beams are widely studied samples in experimental research in atomic and optical physics. For the application of ultra cold gases as model systems for e.g. quantum many particle systems, the atomic species is not very important. Thus this field is dominated by alkaline, earthalkaline elements which are easily accessible with conventional laser sources and have convenient closed cooling transition. On the other hand, laser cooled atoms may also be interesting for technological applications, for instance for the creation of novel materials by atomic nanofabrication (ANF). There it will be important to use technologically relevant materials. As an example, using group III atoms of the periodical table in ANF may open a route to generate fully 3D structured composite materials. The minimal requirement in such an ANF experiment is the collimation of an atomic beam which is accessible by one dimensional laser cooling. In this dissertation, I describe transverse laser cooling of an Indium atomic beam. For efficient laser cooling on a cycling transition, I have built a tunable, continuous-wave coherent ultraviolet source at 326 nm based on frequency tripling. For this purpose, two independent high power Yb-doped fiber amplifiers for the generation of the fundamental radiation at {lambda}{sub {omega}} = 977 nm have been constructed. I have observed sub-Doppler transverse laser cooling of an Indium atomic beam on a cycling transition of In by introducing a polarization gradient in the linear-perpendicular-linear configuration. The transverse velocity spread of a laser-cooled In atomic beam at full width at half maximum was achieved to be 13.5{+-}3.8 cm/s yielding a full divergence of only 0.48 {+-} 0.13 mrad. In addition, nonlinear spectroscopy of a 3-level, {lambda}-type level system driven by a pump and a probe beam has been investigated in order to understand the absorption line shapes used as a frequency reference in a previous two

Blood pressure self-monitoring in pregnancy (BuMP) feasibility study; a qualitative analysis of women's experiences of self-monitoring.

Science.gov (United States)

Hinton, Lisa; Tucker, Katherine L; Greenfield, Sheila M; Hodgkinson, James A; Mackillop, Lucy; McCourt, Christine; Carver, Trisha; Crawford, Carole; Glogowska, Margaret; Locock, Louise; Selwood, Mary; Taylor, Kathryn S; McManus, Richard J

2017-12-19

Hypertensive disorders in pregnancy are a leading cause of maternal and fetal morbidity worldwide. Raised blood pressure (BP) affects 10% of pregnancies worldwide, of which almost half develop pre-eclampsia. The proportion of pregnant women who have risk factors for pre-eclampsia (such as pre-existing hypertension, obesity and advanced maternal age) is increasing. Pre-eclampsia can manifest itself before women experience symptoms and can develop between antenatal visits. Incentives to improve early detection of gestational hypertensive disorders are therefore strong and self-monitoring of blood pressure (SMBP) in pregnancy might be one means to achieve this, whilst improving women's involvement in antenatal care. The Blood Pressure Self-Monitoring in Pregnancy (BuMP) study aimed to evaluate the feasibility and acceptability of SMBP in pregnancy. To understand women's experiences of SMBP during pregnancy, we undertook a qualitative study embedded within the BuMP observational feasibility study. Women who were at higher risk of developing hypertension and/or pre-eclampsia were invited to take part in a study using SMBP and also invited to take part in an interview. Semi-structured interviews were conducted at the women's homes in Oxfordshire and Birmingham with women who were self-monitoring their BP as part of the BuMP feasibility study in 2014. Interviews were conducted by a qualitative researcher and transcribed verbatim. A framework approach was used for analysis. Fifteen women agreed to be interviewed. Respondents reported general willingness to engage with monitoring their own BP, feeling that it could reduce anxiety around their health during pregnancy, particularly if they had previous experience of raised BP or pre-eclampsia. They felt able to incorporate self-monitoring into their weekly routines, although this was harder post-partum. Self-monitoring of BP made them more aware of the risks of hypertension and pre-eclampsia in pregnancy. Feelings of

Evaluated neutronic file for indium

International Nuclear Information System (INIS)

Smith, A.B.; Chiba, S.; Smith, D.L.; Meadows, J.W.; Guenther, P.T.; Lawson, R.D.; Howerton, R.J.

1990-01-01

A comprehensive evaluated neutronic data file for elemental indium is documented. This file, extending from 10 -5 eV to 20 MeV, is presented in the ENDF/B-VI format, and contains all neutron-induced processes necessary for the vast majority of neutronic applications. In addition, an evaluation of the 115 In(n,n') 116m In dosimetry reaction is presented as a separate file. Attention is given in quantitative values, with corresponding uncertainty information. These files have been submitted for consideration as a part of the ENDF/B-VI national evaluated-file system. 144 refs., 10 figs., 4 tabs

Synthesis of indium oxide cubic crystals by modified hydrothermal route for application in room temperature flexible ethanol sensors

Energy Technology Data Exchange (ETDEWEB)

Seetha, M., E-mail: seetha.phy@gmail.com [Department of Physics, SRM University, Kattankulathur, Kancheepuram Dt 603 203 (India); Meena, P. [Department of Physics, PSGR Krishnammal College for Women, Coimbatore 641 046 (India); Mangalaraj, D., E-mail: dmraj800@yahoo.com [DRDO-BU Centre for Life Sciences, Bharathiar University Campus, Coimbatore (India); Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641 014 (India); Masuda, Yoshitake [National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560 (Japan); Senthil, K. [School of Advanced Materials Science and Engineering, Sungkyunkwan University (Suwon Campus), Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

2012-03-15

Highlights: Black-Right-Pointing-Pointer For the first time HMT is used in the preparation of indium oxide. Black-Right-Pointing-Pointer HMT itself acts as base for the precursor and results in cubic indium hydroxide. Black-Right-Pointing-Pointer Modified hydrothermal route used for the preparation of cubic indium oxide crystals. Black-Right-Pointing-Pointer As a new approach a composite film synthesized with prepared indium oxide. Black-Right-Pointing-Pointer Film showed good response to ethanol vapours with quick response and recovery times. - Abstract: Indium oxide cubic crystals were prepared by using hexamethylenetetramine and indium chloride without the addition of any structure directing agents. The chemical route followed in the present work was a modified hydrothermal synthesis. The average crystallite size of the prepared cubes was found to be 40 nm. A blue emission at 418 nm was observed at room temperature when the sample was excited with a 380 nm Xenon lamp. This emission due to oxygen vacancies made the material suitable for gas sensing applications. The synthesized material was made as a composite film with polyvinyl alcohol which was more flexible than the films prepared on glass substrates. This flexible film was used as a sensing element and tested with ethanol vapours at room temperature. The film showed fast response as well as recovery to ethanol vapours with a sensor response of about 1.4 for 100 ppm of the gas.

Elastic properties of zinc, cadmium, bismuth, thallium, tin, lead and their binary alloys with indium

International Nuclear Information System (INIS)

Magomedov, A.M.

1986-01-01

Rates of propagation of longitudinal and transverse acoustic waves in samples as well as density of Tl, Pb, Sn, Bi, Cd, Zn and their binary alloys with indium are determined. The results obtained are used for calculation of elasticity constants of these materials. It is stated that concentration dependences of elasticity constants for indium alloys have non-linear character; negative deflection from the additive line is observed

Microstructure-mechanical property relationships for Al-Cu-Li-Zr alloys with minor additions of cadmium, indium or tin

Science.gov (United States)

Blackburn, L. B.; Starke, E. A., Jr.

1989-01-01

Minor amounts of cadmium, indium or tin were added to a baseline alloy with the nominal composition of Al-2.4Cu-2.4Li-0.15Zr. These elements were added in an attempt to increase the age-hardening response of the material such that high strengths could be achieved through heat-treatment alone, without the need for intermediate mechanical working. The alloy variant containing indium achieved a higher peak hardness in comparison to the other alloy variations, including the baseline material, when aged at temperatures ranging from 160 C to 190 C. Tensile tests on specimens peak-aged at 160 indicated the yield strength of the indium-bearing alloy increased by approximately 15 percent compared to that of the peak-aged baseline alloy. In addition, the yield strength obtained in the indium-bearing alloy was comparable to that reported for similar baseline material subjected to a 6 percent stretch prior to peak-aging at 190 C. The higher strength levels obtaied for the indium-bearing alloy are attributed to increased number densities and homogeneity of both the T1 and theta-prime phases, as determined by TEM studies.

First-principles analysis of structural and opto-electronic properties of indium tin oxide

Science.gov (United States)

Tripathi, Madhvendra Nath; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

2012-05-01

Density functional theory (DFT) and DFT + U (DFT with on-site Coulomb repulsion corrections) calculations have been carried out to study the structural and opto-electronic properties of indium tin oxide (ITO) for both the oxidized and reduced environment conditions. Some of the results obtained by DFT calculations differ from the experimental observations, such as uncertain indication for the site preference of tin atom to replace indium atom at b-site or d-site, underestimation of local inward relaxation in the first oxygen polyhedra around tin atom, and also the improper estimation of electronic density of states and hence resulting in an inappropriate optical spectra of ITO. These discrepancies of theoretical outcomes with experimental observations in ITO arise mainly due to the underestimation of the cationic 4d levels within standard DFT calculations. Henceforth, the inclusion of on-site corrections within DFT + U framework significantly modifies the theoretical results in better agreement to the experimental observations. Within this framework, our calculations show that the indium b-site is preferential site over d-site for tin atom substitution in indium oxide under both the oxidized and reduced conditions. Moreover, the calculated average inward relaxation value of 0.16 Å around tin atom is in good agreement with the experimental value of 0.18 Å. Furthermore, DFT + U significantly modify the electronic structure and consequently induce modifications in the calculated optical spectra of ITO.

In-Situ Growth and Characterization of Indium Tin Oxide Nanocrystal Rods

Directory of Open Access Journals (Sweden)

Yan Shen

2017-11-01

Full Text Available Indium tin oxide (ITO nanocrystal rods were synthesized in-situ by a vapor-liquid-solid (VLS method and electron beam evaporation technique. When the electron-beam gun bombarded indium oxide (In2O3 and tin oxide (SnO2 mixed sources, indium and tin droplets appeared and acted as catalysts. The nanocrystal rods were in-situ grown on the basis of the metal catalyst point. The nanorods have a single crystal structure. Its structure was confirmed by X-ray diffraction (XRD and transmission electron microscopy (TEM. The surface morphology was analyzed by scanning electron microscopy (SEM. During the evaporation, a chemical process was happened and an In2O3 and SnO2 solid solution was formed. The percentage of doped tin oxide was calculated by Vegard’s law to be 3.18%, which was in agreement with the mixture ratio of the experimental data. The single crystal rod had good semiconductor switch property and its threshold voltage of single rod was approximately 2.5 V which can be used as a micro switch device. The transmission rate of crystalline nanorods ITO film was over 90% in visible band and it was up to 95% in the blue green band as a result of the oxygen vacancy recombination luminescence.

Laser- and gamma-induced transformations of optical spectra of indium-doped sodium borate glass

CERN Document Server

Kopyshinsky, O V; Zelensky, S E; Danilchenko, B A; Shakhov, O P

2003-01-01

The optical absorption and luminescence properties of indium-doped sodium borate glass irradiated by gamma-rays and by powerful UV lasers within the impurity-related absorption band are investigated experimentally. It is demonstrated that both the laser- and gamma-irradiation cause similar transformations of optical spectra in the UV and visible regions. The changes of the spectra observed are described with the use of a model which includes three types of impurity centres formed by differently charged indium ions.

Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

Science.gov (United States)

Ho, Szuheng; Yu, Hyeonggeun; So, Franky

2017-11-01

Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

Thermal bump removal of a crystal monochromator by designing an optimal shape

Energy Technology Data Exchange (ETDEWEB)

Micha, Jean-Sébastien, E-mail: micha@esrf.fr [CRG-IF BM32 Beamline, ESRF, 6 rue J. Horowitz, BP 220, 38043 Grenoble (France); UMR SPrAM 5819, CEA-Grenoble/INAC/SPrAM, 17 avenue des Martyrs, 38054 Grenoble Cedex 9 (France); Geaymond, Olivier [CRG-IF BM32 Beamline, ESRF, 6 rue J. Horowitz, BP 220, 38043 Grenoble (France); Institut Néel, CNRS, 25 avenue des Martyrs, 38054 Grenoble Cedex 9 (France); Rieutord, Francois [CRG-IF BM32 Beamline, ESRF, 6 rue J. Horowitz, BP 220, 38043 Grenoble (France); CEA-Grenoble/INAC/NRS, 17 avenue des Martyrs, 38054 Grenoble Cedex 9 (France)

2013-05-11

Thermal bump arising at illuminated area of a water cooled monochromator crystal can be considerably reduced by designing an appropriate shape. Temperature and deformation have been simulated by finite element analysis (FEA) computations as a function of few geometrical parameters describing the shape of the crystal. As a result, a new crystal shape has been found which optimizes the throughput of a double crystals monochromator (DCM). Performances of the initial rectangular crystal and the new designed crystal predicted by FEA-based calculations and measured during experimental tests on a synchrotron beamline are reported. General design principles to overcome heat load issues and the objective function using the slope errors derived from FEA results are detailed. Current and foreseen performances at higher load are presented. Finally, advantages and limits of this simple-to-design and cheap solution are discussed.

Ellipsometric investigations of pyrolytically deposited thin indium oxide films

International Nuclear Information System (INIS)

Winkler, U.

1980-01-01

Ellipsometric measurements have been carried out of thin indium oxide films deposited pyrolytically on glass substrates. It was found that the roughness of the films affected the measuring results. Therefore, only after applying a two-layer model a reasonable interpretation of the measuring results became possible

Influence of disorder on the superconducting critical temperature in indium-opal nanocomposites

Science.gov (United States)

Zakharchuk, I.; Januzaj, A.; Mikhailin, N. Yu.; Traito, K. B.; Chernyaev, A. V.; Romanov, S. G.; Safonchik, M.; Shamshur, D. V.; Lähderanta, E.

2018-06-01

Transport properties of bulk indium-opal and indium-porous glass superconducting nanocomposites possessing moderate and strong disorder are investigated. A strongly nonmonotonous dependence of the global critical temperature Tc versus normal state conductivity of samples is found. The maximum, which is observed at moderate disorder, has Tc higher than that of clean bulk indium. The increasing part can be explained by the Eliashberg equations with disorder and an additional mechanism of interaction between superconducting and dielectric granules. The descending part of the maximum at higher disorder can be explained by the increasing of long-range Coulomb repulsion due to diffusion of charges. Negative slope in magnetic field dependence of resistivity and a peak in the temperature dependence of resistivity, observed in the sample near the proximity to the disorder-induced superconductor-insulator transition (SIT). A large difference between the onset temperature of superconducting fluctuations, Tcon , and global critical temperature Tc is found and considered in the framework of the weak multifractal theory. Slow time-logarithmic relaxation of the resistivity between Tc and Tcon is observed, which assumes existence of the precursor state near the SIT. This unusual state is discussed in the scope of the many-body localization theory.

Charge mobility increase in indium-molybdenum oxide thin films by hydrogen doping

Energy Technology Data Exchange (ETDEWEB)

Catalán, S.; Álvarez-Fraga, L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain); Salas, E. [Spline CRG, ESRF, 38043 Grenoble (France); Ramírez-Jiménez, R. [Departamento de Física, Escuela Politécnica Superior, Universidad Carlos III de Madrid, Avenida Universidad 30, Leganés, 28911 Madrid (Spain); Rodriguez-Palomo, A.; Andrés, A. de [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain); Prieto, C., E-mail: cprieto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain)

2016-11-15

Highlights: • The charge mobility in IMO films is correlated with its hydrogen content. • The mobility behavior is explained by the presence of OH{sup −} groups in IMO films. • Mo{sup 4+} is identified in transparent conductive IMO by X-ray absorption spectroscopy. - Abstract: The increase of charge mobility in transparent conductive indium molybdenum oxide (IMO) films is correlated with the presence of hydroxyl groups. The introduction of H{sub 2} in the chamber during sputtering deposition compensates the excess charge introduced by cationic Mo doping of indium oxide either by oxygen or hydroxyl interstitials. Films present a linear increase of carrier mobility correlated with H{sub 2} content only after vacuum annealing. This behavior is explained because vacuum annealing favors the removal of oxygen interstitials over that of hydroxyl groups. Since hydroxyl groups offer lower effective charge and smaller lattice distortions than those associated with interstitial oxygen, this compensation mechanism offers the conditions for the observed increase in mobility. Additionally, the short-range order around molybdenum is evaluated by extended X-ray absorption fine structure (EXAFS) spectroscopy, showing that Mo{sup 4+} is placed at the In site of the indium oxide.

A novel electrode surface fabricated by directly attaching gold nanoparticles onto NH2+ ions implanted-indium tin oxide substrate

International Nuclear Information System (INIS)

Liu Chenyao; Jiao Jiao; Chen Qunxia; Xia Ji; Li Shuoqi; Hu Jingbo; Li Qilong

2010-01-01

A new type of gold nanoparticle attached to a NH 2 + ion implanted-indium tin oxide surface was fabricated without using peculiar binder molecules, such as 3-(aminopropyl)-trimethoxysilane. A NH 2 /indium tin oxide film was obtained by implantation at an energy of 80 keV with a fluence of 5 x 10 15 ions/cm 2 . The gold nanoparticle-modified film was characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and electrochemical techniques and compared with a modified bare indium tin oxide surface and 3-(aminopropyl)-trimethoxysilane linked surface, which exhibited a relatively low electron transfer resistance and high electrocatalytic activity. The results demonstrate that NH 2 + ion implanted-indium tin oxide films can provide an important route to immobilize nanoparticles, which is attractive in developing new biomaterials.

Work in progress: radionuclide imaging of indium-111-labeled eosinophils in mice

International Nuclear Information System (INIS)

Runge, V.M.; Rand, T.H.; Clanton, J.A.; Jones, J.P.; Colley, D.G.; Partain, C.L.; James, A.E. Jr.

1983-01-01

Eosinophils isolated from peritoneal exudates were labeled with indium-111-oxine and injected intravenously into sensitized mice. They became localized at sites of inflammation produced by intradermal injections of schistosomal antigen or Toxocara canis larvae, whereas labeled neutrophils did not. Intense uptake of eosinophils by normal spleen, liver, and bone marrow was noted, with tracer distribution effectively complete by 5 hours after injection. Indium-111-eosinophil studies appear to be quite sensitive to parasitic inflammatory reactions; in contrast, nonspecific inflammation such as that induced by turpentine causes localization of eosinophils, but to a lesser extent. This technique may be useful in the study of parasitic and allergic disease

Direct observation of indium compositional fluctuation in GaInN/GaN multi-quantum wells using an X-ray micro-beam from the 8-GeV storage ring

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao; Uemura, Shigeaki; Kudo, Yoshihiro; Fuutagawa, Noriyuki [Materials Laboratories, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Terada, Yasuko [Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)

2008-07-01

We measured the micrometer-scale fluctuation of the indium contents in a 50 {mu}m x 30 {mu}m region of annealed Ga{sub 0.8}In{sub 0.2}N/GaN multi quantum wells by mapping the counts of indium fluorescent X-rays excited by a 1.3 {mu}m x 3.8 {mu}m X-ray micro-beam. The mapping indicates that two distinct regions - indium-rich and indium-poor regions - are formed by the annealing. The indium contents in the island-shaped low-indium regions are 20% less than in the surrounding high-indium region. As the island-shaped low-indium regions clearly coincide with the low-radiative regions as observed by Hg-lamp-excited fluorescent microscopy, we believe that the low-radiative regions are a result not of indium segregation but of the generation of defects such as plane defects. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Study of the cerebro-spinal fluid circulation indium 111 labelled DTPA. Report of 300 cases

International Nuclear Information System (INIS)

Moreau, R.; Askienazy, S.; Mathieu, E.; Moretti, J.-L.

1976-01-01

A study of the C.S.F. circulation by intrathecal injection of radioactive tracers is a usual technique of neurological exploration. Indium-111 DTPA has numerous advantages for this type of study. It is a chelating agent, the renal clearance of which is rapid and which has no toxicity at the dose injected. Indium-111 is a cyclotron product with a half-life (2.8 days) compatible with the duration of the examination. Finally the dose of radioactivity delivered by this isotope is less than that of iodine 131, Technetium 99m, and ytterbium 169. In normal subjects after injection by the lumbar route, the average biological half-life measured by external counting lies between 20 and 28 hours. A study of the circulation of the C.S.F. is particularly useful in patients suspected of hydrocephalus. It permits finer diagnosis and shows the indication and type of by pass operation that may be necessary. An increase in the biological half-life of indium 111-DTPA seems to be a good indication for such an operation. An experience of 300 patients has shown the interest of the use of Indium 111-DTPA which now seems to be the best radio-isotope for the study of the subarachnoid space [fr

Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

International Nuclear Information System (INIS)

Sallis, Shawn; Williams, Deborah S.; Quackenbush, Nicholas F.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.J.

2015-01-01

Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In + lone pair active electrons as the origin of the deep subgap features. No In + species are observed, only In 0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Anodic behavior of Al-Zn-In sacrificial anodes at different concentration of zinc and indium

Energy Technology Data Exchange (ETDEWEB)

Keyvani, Ahmad [Shahrekord Univ. (Iran, Islamic Republic of). Dept. of Materials Engineering; Tehran Univ. (Iran, Islamic Republic of). School of Metallurgy and Materials; Saremi, Mohsen [Tehran Univ. (Iran, Islamic Republic of). School of Metallurgy and Materials; Saeri, Mohammad Reza [Shahrekord Univ. (Iran, Islamic Republic of). Dept. of Materials Engineering

2012-12-15

Al-Zn-In anodes show better performance due to the beneficial effects of Zn and In on prevention of aluminum passivity and producing a homogeneous structure for uniform corrosion of the anodes. However, there are different views about the optimum concentration of each element in the anode. In this study, the anodic behavior of Al-Zn-In alloy with different concentrations of zinc from 1 to 6wt.% and indium from 0.01 to 0.05wt.% are studied. The NACE efficiency test and polarization are used in 3wt.% NaCl solution for corrosion characterization. The results showed that zinc and indium change the anode potential to more active potentials and improve the microstructure uniformity of anodes. The latter leads to more uniform corrosion. Optimum concentrations of zinc (5wt.%) and indium (0.02wt.%) were found in this respect. (orig.)

Effect of operating parameters on indium (III) ion removal by iron electrocoagulation and evaluation of specific energy consumption

Energy Technology Data Exchange (ETDEWEB)

Chou, Wei-Lung, E-mail: wlchou0388@hotmail.com [Department of Safety, Health and Environmental Engineering, Hungkuang University, Sha-Lu, Taichung 433, Taiwan (China); Wang, Chih-Ta [Department of Safety Health and Environmental Engineering, Chung Hwa University of Medical Technology, Tainan Hsien 717, Taiwan (China); Huang, Kai-Yu [Department of Safety, Health and Environmental Engineering, Hungkuang University, Sha-Lu, Taichung 433, Taiwan (China)

2009-08-15

The aim of this study is to investigate the effects of operating parameters on the specific energy consumption and removal efficiency of synthetic wastewater containing indium (III) ions by electrocoagulation in batch mode using an iron electrode. Several parameters, including different electrode pairs, supporting electrolytes, initial concentration, pH variation, and applied voltage, were investigated. In addition, the effects of applied voltage, supporting electrolyte, and initial concentration on indium (III) ion removal efficiency and specific energy consumption were investigated under the optimum balance of reasonable removal efficiency and relative low energy consumption. Experiment results indicate that a Fe/Al electrode pair is the most efficient choice of the four electrode pairs in terms of energy consumption. The optimum supporting electrolyte concentration, initial concentration, and applied voltage were found to be 100 mg/l NaCl, 20 mg/l, and 20 V, respectively. A higher pH at higher applied voltage (20 or 30 V) enhanced the precipitation of indium (III) ion as insoluble indium hydroxide, which improved the removal efficiency. Results from the indium (III) ion removal kinetics show that the kinetics data fit the pseudo second-order kinetic model well. Finally, the composition of the sludge produced was characterized with energy dispersion spectra (EDS).

Effect of operating parameters on indium (III) ion removal by iron electrocoagulation and evaluation of specific energy consumption

International Nuclear Information System (INIS)

Chou, Wei-Lung; Wang, Chih-Ta; Huang, Kai-Yu

2009-01-01

The aim of this study is to investigate the effects of operating parameters on the specific energy consumption and removal efficiency of synthetic wastewater containing indium (III) ions by electrocoagulation in batch mode using an iron electrode. Several parameters, including different electrode pairs, supporting electrolytes, initial concentration, pH variation, and applied voltage, were investigated. In addition, the effects of applied voltage, supporting electrolyte, and initial concentration on indium (III) ion removal efficiency and specific energy consumption were investigated under the optimum balance of reasonable removal efficiency and relative low energy consumption. Experiment results indicate that a Fe/Al electrode pair is the most efficient choice of the four electrode pairs in terms of energy consumption. The optimum supporting electrolyte concentration, initial concentration, and applied voltage were found to be 100 mg/l NaCl, 20 mg/l, and 20 V, respectively. A higher pH at higher applied voltage (20 or 30 V) enhanced the precipitation of indium (III) ion as insoluble indium hydroxide, which improved the removal efficiency. Results from the indium (III) ion removal kinetics show that the kinetics data fit the pseudo second-order kinetic model well. Finally, the composition of the sludge produced was characterized with energy dispersion spectra (EDS).

Effect of aluminum doping on the high-temperature stability and piezoresistive response of indium tin oxide strain sensors

International Nuclear Information System (INIS)

Gregory, Otto J.; You, Tao; Crisman, Everett E.

2005-01-01

Ceramic strain sensors based on reactively sputtered indium tin oxide (ITO) thin films doped with aluminum are being considered to improve the high-temperature stability and response. Ceramic strain sensors were developed to monitor the structural integrity of components employed in aerospace propulsion systems operating at temperatures in excess of 1500 deg C. Earlier studies using electron spectroscopy for chemical analysis (ESCA) studies indicated that interfacial reactions between ITO and aluminum oxide increase the stability of ITO at elevated temperature. The resulting ESCA depth files showed the presence of two new indium-indium peaks at 448.85 and 456.40 eV, corresponding to the indium 3d5 and 3d3 binding energies. These binding energies are significantly higher than those associated with stoichiometric indium oxide. Based on these studies, a combinatorial chemistry approach was used to screen large numbers of possible concentrations to optimize the stability and performance of Al-doped ceramic strain sensors. Scanning electron microscopy was used to analyze the combinatorial libraries in which varying amounts of aluminum were incorporated into ITO films formed by cosputtering from multiple targets. Electrical stability and piezoresistive response of these films were compared to undoped ITO films over the same temperature range

Determination of indium(III) with 3,4,5,6-tetrachlorogallein and cetylpyridinium chloride

International Nuclear Information System (INIS)

Mori, Itsuo; Fujita, Yoshikazu; Ida, Masako; Enoki, Takehisa

1976-01-01

Rapid and highly sensitive methods have been developed for the spectrophotometric and titrimetric determination of indium(III) with 3,4,5,6-tetrachlorogallein(3,4,5,6-T. Cl, Gal.) and cetylpyridinium chloride(CPC) in aqueous solutions of pH 4.2--5.2. The absorbance of the indium(III)-3,4,5,6-T. Cl. Gal. complex at 620 nm and the color change (pure blue - weak violetish red) were used to indicate the end point in the EDTA titration. The calibration curve for the spectrophotometry was linear in the range 0--45.0 μg In(III)/10 ml. According to Sandell's expression, the sensitivity was 0.0032 μg In(III)/cm 2 for an absorbance of 0.001. To the solution containing less than 45.0 μg of indium(III), 2.0 ml of 1.0x10 -2 M CPC solution, 3.0 ml of Walpole buffer solution(pH 4.4; acetic acid-sodium acetate), and 2.0 ml of 1.0x10 -3 M 3,4,5,6-T.Cl.Gal. methanol solution were added and the volume was made up to 10.0 ml with water. The solution was kept at (20--25) 0 C for 30 minutes and then the absorbance was measured at 620 nm against the reagent blank. The mole ratio of indium(III), 3,4,5,6-T.Cl.Gal. and CPC in the complex was estimated to be 1 : 2 : 2 by the continuous variation and the mole ratio methods. (auth.)

Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

Energy Technology Data Exchange (ETDEWEB)

Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

2014-09-15

The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

Indium 111 WBC scan in local and systemic fungal infections

International Nuclear Information System (INIS)

Haseman, M.K.; Blake, K.; McDougall, I.R.

1984-01-01

We describe two patients-one with a systemic fungal infection and one with a localized form-who had strikingly abnormal indium 111 leukocyte (WBC) scans. The patient with systemic disease had an abnormal WBC scan before lesions became clinically apparent

Efficient Indium-Mediated Dehalogenation of Aromatics in Ionic Liquid Media

Directory of Open Access Journals (Sweden)

Flavia C. Zacconi

2012-12-01

Full Text Available An efficient indium-mediated dehalogenation reaction of haloaromatics and haloheteroaromatics in ionic liquids has been studied. This method is simple and effective in the presence of [bmim]Br. Furthermore, this methodology is environmentally friendly compared with conventional ones.

Current status of indium-111 labeled bleomycin for tumor detection

International Nuclear Information System (INIS)

Taylor, R.D.; Blahd, W.H.

1975-01-01

The advantages and disadvantages of 111 In-labeled bleomycin for tumor detection are briefly mentioned. Indium-111 labeled bleomycin does localize in human tumors. However, its role in tumor detection and staging as compared with 67 Ga is still somewhat controversial

In{sub 6}Se{sub 7} thin films by heating thermally evaporated indium and chemical bath deposited selenium multilayers

Energy Technology Data Exchange (ETDEWEB)

Ornelas, R.E.; Avellaneda, D. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Shaji, S. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico); Castillo, G.A.; Roy, T.K. Das [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico)

2012-05-15

Indium selenide (In{sub 6}Se{sub 7}) thin films were prepared via selenization of thermally evaporated indium thin films by dipping in sodium selenosulphate solution followed by annealing in nitrogen atmosphere. First, indium was thermally evaporated on glass substrate. Then, the indium coated glass substrates were dipped in a solution containing 80 ml 0.125 M sodium selenosulphate and 1.5 ml dilute acetic acid (25%) for 5 min. Glass/In-Se layers were annealed at 200-400 Degree-Sign C in nitrogen atmosphere (0.1 Torr) for 30 min. X-ray diffraction studies showed the formation of monoclinic In{sub 6}Se{sub 7}. Morphology of the thin films formed at different conditions was analyzed using Scanning electron microscopy. The elemental analysis was done using Energy dispersive X-ray detection. Electrical conductivity under dark and illumination conditions was evaluated. Optical band gap was computed using transmittance and reflectance spectra. The band gap value was in the range 1.8-2.6 eV corresponding to a direct allowed transition. We studied the effect of indium layer thickness and selenium deposition time on the structure, electrical and optical properties of In{sub 6}Se{sub 7} thin films.

(111)Indium Labelling of Recombinant Activated Coagulation Factor VII

DEFF Research Database (Denmark)

Nalla, Amarnadh; Buch, Inge; Sigvardt, Maibritt

2012-01-01

The aim of this study is to investigate whether (111)Indium-labelled recombinant FVIIa (rFVIIa) could be a potential radiopharmaceutical for localization of bleeding sources. DTPA-conjugated rFVIIa was radiolabelled with (111)In chloride. In vitro binding efficiency of (111)In-DTPA-rFVIIa to F1A2...

studies on the use of organic and inorganic ion exchangers for separation of indium(III) from cadmium(II) using analytical methods

International Nuclear Information System (INIS)

Mohamed, A.A.E.

2011-01-01

Organic and inorganic ion exchangers have many applications not only in the industrial, environmental and the nuclear fields but also in the separation of metal ions. This may be returned to its high measured capacity, high selectivity for some metal ions, low solubility, high chemical radiation stability and easy to use.Indium and cadmium are produced from cyclotron target where the solvent extraction represents an ordinary method for separation of indium and cadmium from its target. In the present work, More than chromatographic columns were successfully used for the separation and recovery of indium(III) and cadmium(II) ions from di-component system in aqueous solution using organic and inorganic ion exchangers. The work was carried out in three main parts;1- In the first part, the commercial resin (Dowex50w-x8) was used for the separation of indium from cadmium. The effect of pH, the weight of resin, and equilibrium time on the sorption process of both metal ions were determined. It was found that the adsorption percentage was more than 99% at pH 4 (as optimum pH value) using batch experiment. The results show that indium was first extracted while cadmium is slightly extracted at this pH value. The recovery of indium and cadmium is about 98% using hydrochloric acid as best eluent. The ion exchange/complexing properties of Dowex50w-x8 resin containing various substituted groups towards indium and cadmium cations were investigated.2- In the second part, Zn(II)polymethacrylates, and poly (acrylamide-acrylic acid), as synthetic organic ion exchangers were prepared by gamma irradiation polymerization technique of the corresponding monomer at 30 kGy. The obtained organic resins were mixed with indium ions to determine its capacity in aqueous solutions using batch experiment.

Electrical properties of vacuum-annealed titanium-doped indium oxide films

NARCIS (Netherlands)

Yan, L.T.; Rath, J.K.; Schropp, R.E.I.

2011-01-01

Titanium-doped indium oxide (ITiO) films were deposited on Corning glass 2000 substrates at room temperature by radio frequency magnetron sputtering followed by vacuum post-annealing. With increasing deposition power, the as-deposited films showed an increasingly crystalline nature. As-deposited

Compton scattering studies of the electron momentum distribution in indium phosphide

CERN Document Server

Deb, A; Guin, R; Chatterjee, A K

1999-01-01

The electron momentum anisotropy of indium phosphide has been studied by measuring the directional Compton profiles of indium phosphide single crystals with the use of radiation from an sup 2 sup 4 sup 1 Am gamma source. Three different samples, cut along the [100], [110] and [111] planes, were used. The experimental anisotropy has been compared with the results based on the linear combination of Gaussian orbitals (LCGO) method. The agreement is very good with our theoretical results. It is found that the extrema appearing in the dependences on q of the anisotropies have an intimate connection with the bonding properties of the semiconductor. A self-consistent, all-electron, local density calculation for the partial density of states, total density of states and the charge analysis is also presented here.

Radioassay process using an indium-8-hydroxyquinoline

International Nuclear Information System (INIS)

Goedemans, W.T.

1981-01-01

There is disclosed an in vivo radioassay process in which a radioactive chelate of indium and an 8-hydroxyquinoline is introduced into a warmblooded animal having an inflammatory reaction in an area in which the chelate would not accumulate to the same extent if the inflammation were not present. The chelate gathers in the inflamed area, for instance, in a body abscess and its location is determined by radio surveying the body by an external imaging technique. (author)

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

CERN Document Server

Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1992-05-01

Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

International Nuclear Information System (INIS)

Morgado, Jorge; Barbagallo, Nunzio; Charas, Ana; Matos, Manuel; Alcacer, Luis; Cacialli, Franco

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide

Spectral analysis of the fifth spectrum of indium: In V

International Nuclear Information System (INIS)

Swapnil; Tauheed, A.

2016-01-01

The fifth spectrum of indium (In V) has been investigated in the grazing and normal incidence wavelength regions. In"4"+ is a Rh-like ion with the ground configuration 4p"64d"9 and first excited configurations of the type 4p"64d"8nℓ (n≥4). The theoretical predications for this ion were made by Cowan's quasi-relativistic Hartree–Fock code with superposition of configurations involving 4p"64d"8(5p+6p+7p+4f+5f+6f), 4p"54d"1"0, 4p"64d"75s(5p+4f) for the odd parity matrix and 4p"64d"8 (5s+6s+7s+5d+6d), 4p"64d"7(5s"2+5p"2) for the even parity system. The spectra used for this work were recorded on 10.7 m grazing and normal incidence spectrographs at the National Institute of Standards and Technology, Gaithersburg, Maryland (USA) and also on a 3-m normal incidence vacuum spectrograph at Antigonish (Canada). The sources used were a sliding spark and a triggered spark respectively. Two hundred and thirty two energy levels based on the identification of 873 spectral lines have been established, forty six being new. Least squares fitted parametric calculations were used to interpret the observed level structure. The energy levels were optimized using a level optimization computer program (LOPT). Our wavelength accuracy for sharp and unblended lines is estimated to be within ±0.005 Å for λ below 400 Å and ±0.006 Å up to 1200 Å. - Highlights: • Indium spectra were recorded on both grazing and normal incidence spectrographs. • Calculations were made with Cowan's quasi-relativistic Hartree–Fock code. • New atomic transitions of In V were identified with newly found energy levels. • Uncertainties and Ritz wavelengths of all observed transitions were calculated. • Weighted transition probabilities (gA) were calculated.

Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

Energy Technology Data Exchange (ETDEWEB)

Sallis, Shawn; Williams, Deborah S. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Quackenbush, Nicholas F.; Senger, Mikell [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States); Woicik, Joseph C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899 (United States); White, Bruce E.; Piper, Louis F.J. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States)

2015-07-15

Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In{sup +} lone pair active electrons as the origin of the deep subgap features. No In{sup +} species are observed, only In{sup 0} nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Physical properties of pyrolytically sprayed tin-doped indium oxide coatings

NARCIS (Netherlands)

Haitjema, H.; Elich, J.J.P.

1991-01-01

The optical and electrical properties of tin-doped indium oxide coatings obviously depend on a number of production parameters. This dependence has been studied to obtain a more general insight into the relationships between the various coating properties. The coatings have been produced by spray

Active methods of preventing bumps in situations where the longwall face advances to and crosses a roadway in thick coal beds

Energy Technology Data Exchange (ETDEWEB)

Loboda, C

1978-01-01

The method was analyzed in the Wujek coal mine, where the coal bed is located at 600 m and was 5.3 m to 5.7 m thick. The following situation is described: A longwall face had to pass through a ventilation tunnel. To reduce the inner stress of the coal mass above and below the ventilation tunnel infusion was used. Water was forced into the walls of the tunnel. The tunnel section was 200 m long, 28 holes were drilled, each 40 m deep, diameter of the bore 42 to 45 mm, water pressure 300 at. To prevent bumps the orientation of the longwall face, which had been parallel to the ventilation tunnel, was changed so that it was at the angle of 15 degrees to the ventilation tunnel. Experience showed that the most dangerous situation in the tunnel arises when the distance between a longwall face and a roadway is reduced to 45 m. At that moment pressure on the road support system is the greatest. The danger of bumps at a longwall face is the greatest when it is 25 m away from a roadway.

Composition dependence of the thermodynamic activity and lattice parameter of zeta nickel-indium

International Nuclear Information System (INIS)

Bhattacharya, B.; Masson, D.B.

1976-01-01

The vapor pressure of indium over six alloys in the zeta phase of the nickel-indium system was measured by the method of atomic absorption. Values of thermodynamic activity were calculated from the vapor pressure, and partial heat and entropy of indium were calculated from the temperature coefficients. The lattice parameters of the hexagonal B8 2 unit cell of all alloys were calculated from X-ray diffraction powder patterns. It was found that the a lattice parameter passed through a minimum at the same composition that the excess chemical potential showed a sharp change of slope, when graphed as a function of composition. These effects were similar to those observed previously which have been attributed to overlap by the Fermi surface of a Brillouin zone face. In the present case they were attributed to overlap of the Fermi surface across faces tentatively identified as the [110] faces of the Brillouin zone of the B8 2 structure. The influence of substitutional disorder was also considered as a cause of the thermodynamic effects, but this was rejected because it does not explain the minimum in lattice parameter. (Auth.)

Perturbed angular correlation study of the ion exchange of indium into silicalite zeolites

International Nuclear Information System (INIS)

Ramallo-Lopez, J.M.; Requejo, F.G.; Renteria, M.; Bibiloni, A.G.; Miro, E.E.

1999-01-01

Two indium-containing silicalite zeolites (In/H-ZSM5) catalysts prepared by wet impregnation and ionic exchange were characterized by the Perturbed Angular Correlation (PAC) technique using 111 In as probe to determine the nature of the indium species. Some of these species take part in the catalytic reaction of the selective reduction (SCR) of NO x with methane. PAC experiments were performed at 500 deg. C in air before and after reduction-reoxidation treatments on the catalysts in order to determine the origin of the different hyperfine interactions and then the degree of ionic exchange. Complementary catalytic activity characterizations were also performed.PAC experiments performed on the catalyst obtained by wet impregnation showed that all In-atoms form In 2 O 3 crystallites while almost 70% of In-atoms form In 2 O 3 in the catalyst obtained by ionic exchange. The PAC experiments of both catalysts performed after the reduction-reoxidation treatment revealed the presence of two hyperfine interactions, different from those corresponding to indium in In 2 O 3 . These hyperfine interactions should be associated to disperse In species responsible of the catalytic activity located in the ionic exchange-sites of the zeolites

On-chip multi-wavelength laser sources fabricated using generic photonic integration technology

NARCIS (Netherlands)

Latkowski, S.; Williams, K.A.; Bente, E.A.J.M.

Generic photonic integration technology platforms allow for design and fabrication of large complexity application specific photonic integrated circuits. Monolithic active-passive integration on indium phosphide substrate naturally enables a reliable co-integration of optical gain elements and

Efficient and Selective Debromination of vic-Dibromides to Alkenes Using CoCl2·6H2O/Indium System

International Nuclear Information System (INIS)

Yoo, Byung Woo; Kim, Seo Hee; Min, Ga Hong

2012-01-01

We have found that vic-dibromides treated with CoCl 2 ·6H 2 O/indium system in methanol are efficiently converted into the corresponding alkenes in high yields under mild conditions. Although the scope and limitations of this method have not been fully established, it is expected to be a useful and efficient alternative to the existing methods for the debromination of vic-dibromides. There is always considerable interest in the search for more efficient and selective procedures for the debromination of vic-dibromides. The reduction of CoCl 2 to low-valent cobalt species and the synthetic utility of such species are well documented in the literature. Generally, reducing agents, such as zinc and magnesium, are used for the reduction of CoCl 2 . Because indium and zinc closely resemble each other in several aspects, including first ionization, we considered that a combination of CoCl 2 ·6H 2 O with indium could facilitate the reductive debromination of vic-dibromides under mild conditions. As in the case of zinc, the reduction potential of indium is not highly negative (In: E o , In +3 /In = -0.345 V; Zn: E o , Zn: +2 /Zn = -0.763 V): thus, indium is not sensitive to water and does not form oxides readily in air. In recent years, indium metal has been the subject of active interest because of its unique properties such as low toxicity and high stability in water and air compared to other metals. In connection with our interest in exploring the utility of low-valent metal reagents for organic transformations, we herein wish to report an efficient and chemoselective method for the debromination of vic-dibromides to alkenes using CoCl 2 ·6H 2 O/indium system at room temperature

Transient and steady state behaviour of elasto–aerodynamic air foil bearings, considering bump foil compliance and top foil inertia and flexibility: A numerical investigation

DEFF Research Database (Denmark)

Nielsen, Bo Bjerregaard; Santos, Ilmar F.

2017-01-01

utilise two types of eight-node isoparametric elements. The rotor is modelled as a rigid body without rotational inertia, i.e. as a journal. The bump foil is included via a bilinear version of the simple elastic foundation model. This paper introduces the bilinear simple elastic foundation model, which...

Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

Energy Technology Data Exchange (ETDEWEB)

Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

2015-01-15

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

INDIUM AND ZINC MEDIATED ONE-ATOM CARBOCYCLE ENLARGEMENT IN WATER. (R822668)

Science.gov (United States)

AbstractSix-, seven-, eight-membered rings are enlarged by one carbon-atom into seven-, eight- and nine-membered ring derivatives respectively, via indium or zinc mediated reactions in aqueous medium.

Clinical evaluation of the platelet scintigraphy using indium-111 oxine

International Nuclear Information System (INIS)

Ishikawa, Nobuyoshi; Takeda, Tohoru; Nakajima, Kohtaroh; Satoh, Motohiro; Akisada, Masayoshi; Ijima, Hiroshi

1988-01-01

The clinical usefulness of autologous platelets labeled with Indium-111 oxine was evaluated by scintigraphy as a diagnostic procedure for the detection of various thrombotic disorders as well as in different aneurysms. The positivity was found to be satisfactory (80.0 %) in cases of aortic aneurysm while thoracic aneurysm showed comparatively poor accumulation. High positivity was also demonstrated in deep vein thrombosis. The complimentary role of this method for intracardiac thrombi to echocardiography was noted. The labeling procedure of indium-111 oxine was fairly easy to perform and the activity of labeled platelets was sustained enough to yield good results. In one case scintigraphy was performed successfully after 19 hours of angiography when a hot area of labeled platelets was seen at the puncture site. This method was therefore varified to be a sensitive and reliable method in the assessment of thrombus activity, and as it demonstrates the activity, its helpfulness in the conservative treatment of these disorders is warranted. (author)

Diagnostic compositions containing a chelate of radioactive indium and 8-hydroxyquinoline

International Nuclear Information System (INIS)

Goedemans, W.T.

1981-01-01

There are disclosed aqueous, radioassaying solutions of a chelate of radioactive indium and an 8-hydroxyquinoline, having an essential absence of an organic solvent, e.g., alcohol or chloroform. The solutions are useful in radioassaying warmblooded animals. (author)

Geodesic acoustic mode driven by energetic particles with bump-on-tail distribution

Science.gov (United States)

Ren, Haijun; Wang, Hao

2018-04-01

Energetic-particle-driven geodesic acoustic mode (EGAM) is analytically investigated by adopting the bump-on-tail distribution for energetic particles (EPs), which is created by the fact that the charge exchange time (τcx ) is sufficiently shorter than the slowing down time (τsl ). The dispersion relation is derived in the use of gyro-kinetic equations. Due to the finite ratio of the critical energy and the initial energy of EPs, defined as τc , the dispersion relation is numerically evaluated and the effect of finite τc is examined. Following relative simulation and experimental work, we specifically considered two cases: τsl/τcx = 3.4 and τsl/τcx = 20.4 . The pitch angle is shown to significantly enhance the growth rate and meanwhile, the real frequency is dramatically decreased with increasing pitch angle. The excitation of high-frequency EGAM is found, and this is consistent with both the experiment and the simulation. The number density effect of energetic particles, represented by \

Silver-indium-cadmium control rod behaviour during a severe reactor accident

International Nuclear Information System (INIS)

Bowsher, B.R.; Jenkins, R.A.; Nichols, A.L.; Rowe, N.A.; Simpson, J.A.H.

1986-04-01

An alloy of silver, indium and cadmium is commonly used as control rod material in pressurised water reactors (PWRs). The behaviour of this alloy has been studied in a series of experiments using an induction furnace to achieve temperatures up to 1900K. The aerosols released from overheated clad and unclad control rod samples have been characterised in both steam and inert atmospheres. Mass balance experiments have been undertaken to determine the distribution of the control rod alloy constituents following rupture of the cladding, and this work has been supported by thermogravimetric studies of silver-indium mixtures. Metallographic studies were also undertaken to assess the failure mode of the stainless steel cladding and the interaction of the molten alloy with Zircaloy. The results of this work are discussed in terms of aerosol/vapour behaviour during severe reactor accidents. (author)

Related electrical, superconducting and structural characteristics of low temperature indium films

International Nuclear Information System (INIS)

Belevtsev, B.I.; Pilipenko, V.V.; Yatsuk, L.Ya.

1981-01-01

Reported are results of a complex study of electrical, superconducting and structural properties of indium films vacuum evaporated onto a liquid helium-cooled substrate. Structural electron diffraction investigations gave a better insight into the general features of the annealing during the warming-up of cold-deposited films. It is found that the annealing of indium films to about 80 to 100 K entails an irreversible growth of interplanar separations due to decreasing inhomogeneous microstresses. As the films are warmed from 100 to 300 K, the principal annealing processes are determined by crystallite growth and development of dominating orientation. The changes in the residual resistance and in Tsub(c) with warming the cold-deported films are explained on the base of structural data obtained. In particular, a direct relationship is revealed between the crystallite size and Tsub(c) [ru

Simulation studies of plasma waves in the electron foreshock - The generation of Langmuir waves by a gentle bump-on-tail electron distribution

Science.gov (United States)

Dum, C. T.

1990-01-01

Particle simulation experiments were used to study the basic physical ingredients needed for building a global model of foreshock wave phenomena. In particular, the generation of Langmuir waves by a gentle bump-on-tail electron distribution is analyzed. It is shown that, with appropriately designed simulations experiments, quasi-linear theory can be quantitatively verified for parameters corresponding to the electron foreshock.

Surface characterization of sol–gel derived indium tin oxide films on ...

Indian Academy of Sciences (India)

Unknown

, India ... 1. Introduction. Indium tin oxide (ITO) coating on glass is an important item in the field ..... In addition, contamination of carbon from environment cannot be ruled ..... processing of ceramics, glasses and composites (eds) L L. Hench and ...

Growth and Characterization of Indium Doped ZnO Nano wires Using Thermal Evaporation Method

International Nuclear Information System (INIS)

Abrar Ismardi; Dee, C.F.; Majlis, B.Y.

2011-01-01

Indium doped ZnO nano wires were grown on silicon substrate using vapor thermal deposition method without using any catalyst. Morphological structures were extensively investigated using field emission scanning electron microscopy (FESEM) and show that the nano wires have uniformly hexagonal nano structures with diameters less than 100 nm and lengths from one to a few microns. The sample was measured for elemental composition with energy dispersive X-ray (EDX) spectroscopy, Zn, In and O elements were found on the sample. XRD spectrum of indium doped ZnO nano wires revealed that the nano wires have a high crystalline structure. (author)

Environmental and health aspects of copper-indium-diselenide thin-film photovoltaic modules

International Nuclear Information System (INIS)

Steinberger, H.; Thumm, W.; Freitag, R.; Moskowitz, P.D.; Chapin, R.

1994-01-01

Copper-indium-diselenide (CIS) is a semiconductor compound that can be used to produce thin-film photovoltaic modules. There is on-going research being conducted by various federal agencies and private industries to demonstrate the commercial viability of this material. Because this is a new technology, and because scant information about the health and environmental hazards associated with the use of this material is available, studies have been initiated to characterize the environmental mobility and environmental toxicology of this compound. The objective of these studies is to identify the environmental and health hazards associated with the production, use, and disposal of CIS thin-film photovoltaic modules. The program includes both experimental and theoretical components. Theoretical studies are being undertaken to estimate material flows through the environment for a range of production options as well as use and disposal scenarios. The experimental programs characterize the physical, chemical e.g. leachability and biological parameters e.g. EC 50 in daphnia and algae, and feeding studies in rats

Stopping characteristics of boron and indium ions in silicon

Energy Technology Data Exchange (ETDEWEB)

Veselov, D. S., E-mail: DSVeselov@mephi.ru; Voronov, Yu. A. [National Research Nuclear University MEPhI (Russian Federation)

2016-12-15

The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.

The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

2015-08-24

Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

Maximal loads acting on legs of powered roof support unit in longwalls with bumping hazards

Institute of Scientific and Technical Information of China (English)

StanislawSzweda

2001-01-01

In the article the results of measurements of the resultant force in the legs of a powered roof support unit, caused by a dynamic interaction bf the rock mass, are discussed. The measurements have been taken in the Iongwalls mined with a roof fall, characterized by the highest degree of bumping hazard. It has been stated that the maximal force in the legs Fro, recorded during a dynamic interaction of the rock mass, is proportional to the initial static force in the legs Fst.p Therefore a need for a careful selection of the initial load of the powered roof support, according to the local mining and geological conditions, results from such a statement. Setting the legs with the supporting load exceeding the indispensable value for keeping the direct roof solids in balance, deteriorating the operational parameters of a Iongwall system also has a disadvantageous influence on the value of the force in the legs and the rate of its increase, caused by a dynamic interaction of the rock mass. A correct selection of the initial load causes a decrease in the intensity of a dynamic interaction of the rock mass on powered roof supports, which also has an advanta igeous influence on their life, Simultaneously with the measurements of the resultant force in the legs, the vertical acceleration of the canopy was also recorded. It has enabled to prove that the external dynamic forces may act on the unit both from the roof as well as from the floor. The changes of the force in the legs caused by dynamic phenomena intrinsically created in the roof and changes of the force in the legs caused by blasting explosives in the roof of the working, have been analyzed separately. It has been stated that an increase in the loads of legs, caused by intrinsic phenomena is significantly higher than a force increase in the legs caused by blasting. It means that powered roof supports, to be operated in the workings, where the bumping hazard occurs, will also transmit the loads acting on a unit

A novel electrode surface fabricated by directly attaching gold nanoparticles onto NH{sub 2}{sup +} ions implanted-indium tin oxide substrate

Energy Technology Data Exchange (ETDEWEB)

Liu Chenyao; Jiao Jiao; Chen Qunxia [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Xia Ji [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China); Li Shuoqi [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Hu Jingbo, E-mail: hujingbo@bnu.edu.c [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Li Qilong [College of Chemistry, Beijing Normal University, Beijing 100875 (China)

2010-12-01

A new type of gold nanoparticle attached to a NH{sub 2}{sup +} ion implanted-indium tin oxide surface was fabricated without using peculiar binder molecules, such as 3-(aminopropyl)-trimethoxysilane. A NH{sub 2}/indium tin oxide film was obtained by implantation at an energy of 80 keV with a fluence of 5 x 10{sup 15} ions/cm{sup 2}. The gold nanoparticle-modified film was characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and electrochemical techniques and compared with a modified bare indium tin oxide surface and 3-(aminopropyl)-trimethoxysilane linked surface, which exhibited a relatively low electron transfer resistance and high electrocatalytic activity. The results demonstrate that NH{sub 2}{sup +} ion implanted-indium tin oxide films can provide an important route to immobilize nanoparticles, which is attractive in developing new biomaterials.

Indium oxide thin film based ammonia gas and ethanol vapour sensor

Indian Academy of Sciences (India)

Unknown

acetone and dried under an electric lamp (100 W). Thin films of indium oxide ... A λ-19, UV–VIS Spectrophotometer (Perkin Elmer, USA) was used for measuring .... tion of ammonia is observed through glowing of LED. LM3914, LED driver is ...

Perturbed angular correlation study of the ion exchange of indium into silicalite zeolites

Energy Technology Data Exchange (ETDEWEB)

Ramallo-Lopez, J.M., E-mail: requejo@venus.fisica.unlp.edu.ar; Requejo, F.G., E-mail: requejo@venus.fisica.unlp.edu.ar; Renteria, M., E-mail: requejo@venus.fisica.unlp.edu.ar; Bibiloni, A.G. [UNLP, Programa TENAES (CONICET) and Departamento de Fisica, Faculdad Cs Ex (Argentina)], E-mail: requejo@venus.fisica.unlp.edu.ar; Miro, E.E. [UNL, INCAPE (CONICET) and Faculdad Ing. Quimica (Argentina)

1999-09-15

Two indium-containing silicalite zeolites (In/H-ZSM5) catalysts prepared by wet impregnation and ionic exchange were characterized by the Perturbed Angular Correlation (PAC) technique using {sup 111}In as probe to determine the nature of the indium species. Some of these species take part in the catalytic reaction of the selective reduction (SCR) of NO{sub x} with methane. PAC experiments were performed at 500 deg. C in air before and after reduction-reoxidation treatments on the catalysts in order to determine the origin of the different hyperfine interactions and then the degree of ionic exchange. Complementary catalytic activity characterizations were also performed.PAC experiments performed on the catalyst obtained by wet impregnation showed that all In-atoms form In{sub 2}O{sub 3} crystallites while almost 70% of In-atoms form In{sub 2}O{sub 3} in the catalyst obtained by ionic exchange. The PAC experiments of both catalysts performed after the reduction-reoxidation treatment revealed the presence of two hyperfine interactions, different from those corresponding to indium in In{sub 2}O{sub 3}. These hyperfine interactions should be associated to disperse In species responsible of the catalytic activity located in the ionic exchange-sites of the zeolites.

Diagnosis of deep vein thrombosis using autologous indium-III-labelled platelets

International Nuclear Information System (INIS)

Fenech, A.; Hussey, J.K.; Smith, F.W.; Dendy, P.P.; Bennett, B.; Douglas, A.S.

1981-01-01

Forty-eight patients who had undergone surgical reduction of a fractured neck of femur or in whom deep vein thrombosis was suspected clinically were studied by ascending phlebography and imaging after injection of autologous indium-III-labelled platelets to assess the accuracy and value of the radioisotopic technique in diagnosing deep vein thrombosis. Imaging was performed with a wide-field gammacamera linked with data display facilities. Phlebography showed thrombi in 26 out of 54 limbs examined and a thrombus in the inferior vena cava of one patient; imaging the labelled platelets showed the thrombi in 24 of the 26 limbs and the thrombus in the inferior vena cava. The accumulation of indium-III at sites corresponding to those at which venous thrombi have been shown phlebographically indicates that this radioisotopic technique is a useful addition to methods already available for the detection of deep vein thrombosis. (author)

Diagnosis of deep vein thrombosis using autologous indium-III-labelled platelets

Energy Technology Data Exchange (ETDEWEB)

Fenech, A.; Hussey, J.K.; Smith, F.W.; Dendy, P.P.; Bennett, B.; Douglas, A.S. (Aberdeen Univ. (UK))

1981-03-28

Forty-eight patients who had undergone surgical reduction of a fractured neck of femur or in whom deep vein thrombosis was suspected clinically were studied by ascending phlebography and imaging after injection of autologous indium-III-labelled platelets to assess the accuracy and value of the radioisotopic technique in diagnosing deep vein thrombosis. Imaging was performed with a wide-field gamma camera linked with data display facilities. Phlebography showed thrombi in 26 out of 54 limbs examined and a thrombus in the inferior vena cava of one patient; imaging the labelled platelets showed the thrombi in 24 of the 26 limbs and the thrombus in the inferior vena cava. The accumulation of indium-III at sites corresponding to those at which venous thrombi have been shown phlebographically indicates that this radioisotopic technique is a useful addition to methods already available for the detection of deep vein thrombosis.

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

International Nuclear Information System (INIS)

Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

2011-01-01

Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10 −3 Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10 −3 Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Studies on the optoelectronic properties of the thermally evaporated tin-doped indium oxide nanostructures

Energy Technology Data Exchange (ETDEWEB)

Pan, Ko-Ying [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Lin, Liang-Da [Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China); Chang, Li-Wei [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Shih, Han C., E-mail: hcshih@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China)

2013-05-15

Indium oxide (In{sub 2}O{sub 3}) nanorods, nanotowers and tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods have been fabricated by thermal evaporation. The morphology, microstructure and chemical composition of these three nanoproducts are characterized by FE-SEM, HRTEM and XPS. To further investigate the optoelectronic properties, the I–V curves and cathodoluminescence (CL) spectra are measured. The electrical resistivity of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods are 1.32 kΩ, 0.65 kΩ and 0.063 kΩ, respectively. CL spectra of these three nanoproducts clearly indicate that tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods cause a blue shift. No doubt ITO nanorods obtain the highest performance among these three nanoproducts, and this also means that Sn-doped In{sub 2}O{sub 3} nanostructures would be the best way to enhance the optoelectronic properties. Additionally, the growing mechanism and the optoelectronic properties of these three nanostructures are discussed. This study is beneficial to the applications of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods in optoelectronic nanodevices.

Indium 111 scintigraphy in the exploration of the erythropoietic marrow (relative to 42 observations)

International Nuclear Information System (INIS)

Guerin, G.C.R.

1976-01-01

The bone marrow is difficult to explore as a whole because of its wide non-uniform distribution, variable with the hematopoietic and supporting tissue sites. 111 indium-transferrine bone marrow scintigraphy is a new technique which partly overcomes these difficulties and gives an idea of the overall distribution and richness of the erythropoietic marrow, thus showing up the erythropoiesis sites at a given moment. The properties of indium as medullary tracer are bound up with the characteristics of its metabolism which, to some extent at least resembles that of iron. The two main features are: - its fixation on transferrine (or siderophiline); - its binding to reticulocytes. Moreover indium 111 fulfils the physico-chemical criteria necessary for scintigraphic practice (long half-life, emission detectable by conventional scintigraphs, moderate irradiation of the patient). The properties of this radioelement and the technical conditions of use are examined in turn, then scintigraphic data are compared with the results of traditional bone marrow investigations: medullary biopsy and blood cell counts with reticulocyte fraction. This comparison concerns 42 scintigraphs carried out on patients suffering from various hematological diseases, with prospects of serious development in common [fr

Ternary equilibria in bismuth--indium--lead alloys

International Nuclear Information System (INIS)

Liao, K.C.; Johnson, D.L.; Nelson, R.C.

1975-01-01

The liquidus surface is characterized by three binary equilibria. One binary extends from the Pb--Bi peritectic to the Pb--In peritectic. The other two extend from In--Bi eutectics, merge at 50 at. percent Bi and 30 at. percent Pb, and end at the Bi--Pb eutectic. Based on analysis of ternary liquidus contours and vertical sections, it is suggested that solidification for high lead and very high indium alloys occurs from two-phase equilibria. Solidification from all other alloys occurs from three-phase equilibria. Four-phase solidification does not occur in this system

Extraction chromatography of indium (III) on silica gel impregnated with high molecular weight carboxylic acid and its analytical applications

International Nuclear Information System (INIS)

Majumdar, P.S.; Ray, U.S.

1991-01-01

Indium(III) was separated by extraction chromatography with Versatic 10 as a stationary phase on a column of silica gel from acetic acid and sodium acetate solution (pH 4.5-6.0). The optimum condition for extraction was studied based on the critical study of the relevant factors as effects of pH, flow rate on extraction and elution. Role of stripping agents on the elution was studied. The separation of indium from a number of elements was carried out. Indium(III) was separated from Alsup(III), Gasup(III), Tlsup(III), Zrsup(IV) and trivalent lanthanides which interfere under the recommended extraction condition by exploiting the differences in their stripping behaviour. (author). 7 refs., 1 tab., 1 fig

Enhanced photo-catalytic activity of ordered mesoporous indium oxide nanocrystals in the conversion of CO2 into methanol.

Science.gov (United States)

Gondal, M A; Dastageer, M A; Oloore, L E; Baig, U; Rashid, S G

2017-07-03

Ordered mesoporous indium oxide nanocrystal (m-In 2 O 3 ) was synthesized by nanocasting technique, in which highly ordered mesoporous silca (SBA-15) was used as structural matrix. X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM) Brunauer-Emmett-Teller (BET) and Barrett-Joyner-Halanda (BJH) studies were carried out on m-In 2 O 3 and the results revealed that this material has a highly ordered mesoporous surface with reduced grain size, increased surface area and surface volume compared to the non porous indium oxide. The diffuse reluctance spectrum exhibited substantially improved light absorption efficiency in m-In 2 O 3 compared to normal indium oxide, however, no considerable change in the band gap energies of these materials was observed. When m-In 2 O 3 was used as a photo-catalyst in the photo-catalytic process of converting carbon dioxide (CO 2 ) into methanol under the pulsed laser radiation of 266-nm wavelengths, an enhanced photo-catalytic activity with the quantum efficiency of 4.5% and conversion efficiency of 46.3% were observed. It was found that the methanol production yield in this chemical process is as high as 485 µlg -1 h -1 after 150 min of irradiation, which is substantially higher than the yields reported in the literature. It is quite clear from the results that the introduction of mesoporosity in indium oxide, and the consequent enhancement of positive attributes required for a photo-catalyst, transformed photo-catalytically weak indium oxide into an effective photo-catalyst for the conversion of CO 2 into methanol.

Recovery of indium ions by nanoscale zero-valent iron

Energy Technology Data Exchange (ETDEWEB)

Chen, Wen; Su, Yiming [Tongji University, State Key Laboratory of Pollution Control and Resources Reuse (China); Wen, Zhipan [Wuhan Institute of Technology, School of Chemistry and Environmental Engineering (China); Zhang, Yalei; Zhou, Xuefei, E-mail: zhouxuefei@tongji.edu.cn; Dai, Chaomeng, E-mail: daichaomeng@tongji.edu.cn [Tongji University, State Key Laboratory of Pollution Control and Resources Reuse (China)

2017-03-15

Indium and its compounds have plenty of industrial applications and high demand. Therefore, indium recovery from various industrial effluents is necessary. It was sequestered by nanoscale zero-valent iron (nZVI) whose size mainly ranged from 50 to 70 nm. Adsorption kinetics and isotherm, influence of pH, and ionic strength were thoroughly investigated. The reaction process was well fitted to a pseudo second-order model, and the maximum adsorption capacity of In(III) was 390 mg In(III)/g nZVI similar to 385 mg In(III)/g nZVI at 298 K calculated by Langmuir model. The mole ratio of Fe(II) released to In(III) immobilized was 3:2, which implied a special chemical process of co-precipitation combined Fe(OH){sub 2} with In(OH){sub 3}. Transmission electron microscopy with an energy-disperse X-ray (TEM-EDX), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were used to characterize surface morphology, corrosion products, and valence state of indium precipitate formed on nanoparticles. The structural evolution changed from core-shell structure of iron oxide to sheet structure of co-precipitation, to sphere structure that hydroxide gradually dissolved as the pH decreased, and to cavity structures for the pH continually decreased. Furthermore, below pH 4.7, the In(III) enrichment was inhibited for the limited capacity of co-precipitation. Also, it was found that Ca{sup 2+} and HPO{sub 4}{sup 2−} have more negative influence on In(III) recovery compared with Na{sup +}, NO{sub 3}{sup −}, HCO{sub 3}{sup −}, and SO{sub 4}{sup 2−}. Therefore, the In(III) recovery can be described by a mechanism which consists of adsorption, co-precipitation, and reduction and was over 78% even after 3 cycles. The results confirmed that it was applicable to employ nZVI for In(III) immobilization.

Thermal transport properties of polycrystalline tin-doped indium oxide films

International Nuclear Information System (INIS)

Ashida, Toru; Miyamura, Amica; Oka, Nobuto; Sato, Yasushi; Shigesato, Yuzo; Yagi, Takashi; Taketoshi, Naoyuki; Baba, Tetsuya

2009-01-01

Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt %In 2 O 3 and 10 wt %SnO 2 ). The resistivity and carrier density of the ITO films ranged from 2.9x10 -4 to 3.2x10 -3 Ω cm and from 1.9x10 20 to 1.2x10 21 cm -3 , respectively. The thermal diffusivity of the ITO films was (1.5-2.2)x10 -6 m 2 /s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant (λ ph =3.95 W/m K), which was about twice that for amorphous indium zinc oxide films

Effect of indium doping on zinc oxide films prepared by chemical ...

Indian Academy of Sciences (India)

Administrator

confirmed by X-ray diffraction technique which leads to the introduction of defects in ZnO. Indium doping ... elements like Al, Ga and In can be used as n-type dopant. (Kato et al 2002) .... (α is the absorption coefficient and hν the photon energy).

Generic Top-Functionalization of Patterned Antifouling Zwitterionic Polymers on Indium Tin Oxide

NARCIS (Netherlands)

Li, Y.; Giesbers, M.; Zuilhof, H.

2012-01-01

This paper presents a novel surface engineering approach that combines photochemical grafting and surface-initiated atom transfer radical polymerization (SI-ATRP) to attach zwitterionic polymer brushes onto indium tin oxide (ITO) substrates. The photochemically grafted hydroxyl-terminated organic

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

Science.gov (United States)

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Solvent effects on extraction of aluminum(III), gallium(III), and indium(III), with decanoic acid

International Nuclear Information System (INIS)

Yamada, Hiromichi; Hayashi, Hisao; Fujii, Yukio; Mizuta, Masateru

1986-01-01

Extraction of aluminum(III) and indium(III) with decanoic acid in 1-octanol was carried out at 25 deg C and at an aqueous ionic strength of 0.1 mol dm -3 (NaClO 4 ). Monomeric and tetrameric aluminum(III) decanoates and monomeric indium(III) decanoate are responsible for the extraction. From a comparison of the present results with those obtained from the previous works, the polymerization of the extracted species was found to be more extensive in benzene than in 1-octanol, and the metal decanoates were highly polymerized in the following order in both solvents: Al > Ga > In. (author)

Indium-111 autologous tagged leukocytes in the diagnosis of intraperitoneal sepsis

International Nuclear Information System (INIS)

Ascher, N.L.; Ahrenholz, D.H.; Simmons, R.L.; Weiblen, B.; Gomez, L.; Forstrom, L.A.; Frick, M.P.; Henke, C.; McCullough, J.

1979-01-01

The results of a new test using indium oxine in the diagnosis of postoperative infection are reported. Indium-111 was used to label autologous polymorphonuclear leukocytes, which when reinjected migrate to sites of infection and inflammation. Standard scintigraphy localizes the labeled inflammatory cells at these sites. Sixty-six scans were performed in 43 surgical patients. Thirty-seven scans were categorized as true-positive; 19 scans were categorized as true-negative. Therefore, the accuracy rate was 85%. Two scans (3%) in one patient represented false-positive results. Two scans (3%) were positive for inflammation but there was no infection present; this group was denoted as equivocal. Six scans (9%) were false-negative; false-negative scans are more likely in old lesions with poor blood supply and in areas that overlap regions of normal uptake. The noninvasive nature of the test, high accuracy rate, and ease of administration make it a potentially useful tool in the diagnosis of postoperative infection

The use of indium-111 labeled platelet scanning for the detection of asymptomatic deep venous thrombosis in a high risk population

International Nuclear Information System (INIS)

Siegel, R.S.; Rae, J.L.; Ryan, N.L.; Edwards, C.; Fortune, W.P.; Lewis, R.J.; Reba, R.C.

1989-01-01

Five hundred indium-111 labeled platelet imaging studies (387 donor and 113 autologous) were performed postoperatively in 473 patients who had undergone total hip replacement, total knee replacement, or internal fixation of a hip fracture to detect occult deep venous thrombosis. All patients had been anticoagulated prophylactically with aspirin, warfarin sodium (Coumadin), or dextran. Thirty-four possible cases of proximal deep venous thrombosis were identified in 28 asymptomatic patients. To verify the scan results, 31 venograms were performed in 25 patients (three refused). In 21 of 31 cases, totally occlusive thrombi were detected; in 5 cases, partially occlusive thrombi were detected; in 5 cases, no thrombus was seen. No patient who had a negative scan nor any patient who had a verified positive scan (and received appropriate heparin therapy) subsequently developed symptoms or signs of pulmonary embolism. One hundred forty-one indium study patients also underwent Doppler ultrasonography/impedance plethysmography (Doppler/IPG) as a comparative non-invasive technique. In 137 cases, the results of the indium study and Doppler/IPG studies were congruent. The indium study had no false negative results that were detected by Doppler/IPG. No patient had any clinically evident toxicity. These results suggest that indium-111 labeled platelet scanning is a safe, noninvasive means for identifying DVT in high risk patients

Highly Sensitive ZnO(Ga, In for Sub-ppm Level NO2 Detection: Effect of Indium Content

Directory of Open Access Journals (Sweden)

Natalia Vorobyeva

2017-06-01

Full Text Available Nanocrystalline ZnO, ZnO(Ga, and ZnO(Ga, In samples with different indium contents were prepared by wet-chemical method and characterized in detail by ICP-MS and XRD methods. Gas sensing properties toward NO2 were studied at 150–450 °C by DC conductance measurements. The optimal temperature for gas sensing experiments was determined. The dependence of the ZnO(Ga, In sensor signal to NO2 at 250 °C correlates with the change of conductivity of the samples. The introduction of indium into the system leads to an increase in the values of the sensor signal in the temperature range T < 250 °C. The investigation of the local sample conductivity by scanning spreading resistance microscopy demonstrates that, at high indium content, the sensor properties are determined by the In–Ga–Zn–O layer that forms on the ZnO surface.

Improved superconducting properties of La{sub 3}Co{sub 4}Sn{sub 13} with indium substitution

Energy Technology Data Exchange (ETDEWEB)

Neha, P.; Srivastava, P. [School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067 (India); Jha, R. [School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067 (India); National Physical Laboratory, New Delhi 110012 (India); Shruti [School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067 (India); Awana, V.P.S. [National Physical Laboratory, New Delhi 110012 (India); Patnaik, S., E-mail: spatnaik@mail.jnu.ac.in [School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067 (India)

2016-04-25

We report two fold increase in superconducting transition temperature of La{sub 3}Co{sub 4}Sn{sub 13} by substituting indium at the tin site. The transition temperature of this skutterudite related compound is observed to increase from 2.5 K to 5.1 K for 10% indium substituted sample. The band structure and density of states calculations also indicate such a possibility. The compounds exhibit type-II superconductivity and the values of lower critical field (H{sub c1}), upper critical field (H{sub c2}), Ginzburg–Landau coherence length (ξ), penetration depth (λ) and GL parameter (κ) are estimated to be 0.0028 T, 0.68 T, 21.6 nm, 33.2 nm and 1.53 respectively for La{sub 3}Co{sub 4}Sn{sub 11.7}In{sub 1.3}. Hydrostatic external pressure leads to decrease in transition temperature and the calculated pressure coefficient is −0.311 K/GPa. Flux pinning and vortex activation energies also improved with indium addition. Only positive frequencies are observed in phonon dispersion curve that relate to the absence of charge density wave or structural instability in the normal state. - Highlights: • Superconducting transition temperature of La{sub 3}Co{sub 4}Sn{sub 13} increases two fold by indium substitution. • Band structure and all basic superconducting parameters (e.g,. H{sub c1}, H{sub c2}, ξ,λ and κ are ascertained. • Dependence of superconducting properties under external pressure is studied.

Diffuse pulmonary uptake of indium-111 chloride in idiopathic myelofibrosis

International Nuclear Information System (INIS)

Vieras, F.; Boyd, C.M.; Mora, P.A.

1979-01-01

Unusual indium-111 accumulation and extramedullary hematopoiesis in the lungs of a patient with idiopathic myelofibrosis are described. The bone marrow scan taken 24 h after intravenous injection of 111 InCl 3 faithfully depicted the abnormal distribution of marrow elements as assessed histologically at autopsy, thereby supporting the usefulness of 111 InCl 3 for marrow imaging

A comparison of gallium-67 citrate scintigraphy and indium-111 labelled leukocyte imaging for the diagnosis of prosthetic joint infection. Preliminary results

International Nuclear Information System (INIS)

McKillop, J.H.; Cuthbert, G.F.; Gray, H.W.; McKay, Iain; Sturrock, R.D.

1982-01-01

Preliminary experience in comparing Gallium-67 imaging in patients with a painful prosthetic joint to the findings on Indium-111 labelled leukocyte imaging is reported. In the small series of patients so far studied, no clear advantage has emerged for either Gallium-67 or Indium-111 leukocyte imaging in terms of sensitivity or specificity for joint prosthesis infection. Should a larger group confirm the preliminary findings, Gallium-67 imaging may be preferable to Indium-111 leukocyte imaging in the patient with the painful joint prosthesis, in view of the greater simplicity of the former technique

Detection of a prosthetic aortic valvular abscess with indium-111-labeled leukocytes

Energy Technology Data Exchange (ETDEWEB)

Oates, E.; Sarno, R.C.

1988-10-01

An unsuspected annular abscess at the base of a prosthetic aortic valve in a patient with endocarditis was identified by indium-111-labeled leukocyte scintigraphy alone. This highly sensitive and specific technique expediently demonstrated the surgically proven inflammatory focus.

Detection of a prosthetic aortic valvular abscess with indium-111-labeled leukocytes

International Nuclear Information System (INIS)

Oates, E.; Sarno, R.C.

1988-01-01

An unsuspected annular abscess at the base of a prosthetic aortic valve in a patient with endocarditis was identified by indium-111-labeled leukocyte scintigraphy alone. This highly sensitive and specific technique expediently demonstrated the surgically proven inflammatory focus

Ion implantation of Indium in Hgsub(1-x)Cdsub(x)Te

International Nuclear Information System (INIS)

Destefanis, G.L.

1984-05-01

In this paper, the author shows that it is possible to produce n-p junctions in Hgsub(1-x)Cdsub(x)Te by ion implantation and in which the N zone is not induced by the irradiation defects but by the electrically activated (annealing) indium trace amounts [fr

Sol–gel synthesis of nanostructured indium tin oxide with controlled morphology and porosity

Energy Technology Data Exchange (ETDEWEB)

Kőrösi, László, E-mail: ltkorosi@gmail.com [Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertváros u. 2, H-7632 Pécs (Hungary); Scarpellini, Alice [Department of Nanochemistry, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova (Italy); Petrik, Péter [Institute for Technical Physics and Materials Science, Konkoly-Thege út 29-33, H-1121 Budapest (Hungary); Papp, Szilvia [Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertváros u. 2, H-7632 Pécs (Hungary); Dékány, Imre [MTA-SZTE Supramolecular and Nanostructured Materials Research Group, University of Szeged, Dóm tér 8, H-6720 Szeged (Hungary)

2014-11-30

Graphical abstract: - Highlights: • Nanocrystalline ITO thin films and powders were prepared by a sol–gel method. • The nature of the compounds used for hydrolysis plays a key role in the morphology. • Hydrolysis of In{sup 3+}/Sn{sup 4+} with EA led to a rod-like morphology. • Monodisperse spherical ITO nanoparticles were obtained on the use of AC. • ITO{sub E}A was highly porous, while ITO{sub A}C contained densely packed nanocrystals. - Abstract: Nanostructured indium tin oxide (ITO) powders and thin films differing in morphology and porosity were prepared by a sol–gel method. In{sup 3+} and Sn{sup 4+} were hydrolyzed in aqueous medium through the use of ethanolamine (EA) or sodium acetate (AC). X-ray diffraction measurements demonstrated that both EA and AC furnished indium tin hydroxide, which became nanocrystalline after aging for one day. The indium tin hydroxide samples calcined at 550 °C afforded ITO with a cubic crystal structure, but the morphology differed significantly, depending on the agent used for hydrolysis. Electron microscopy revealed the formation of round monodisperse nanoparticles when AC was used, whereas the application of EA led to rod-like ITO nanoparticles. Both types of nanoparticles were suitable for the preparation of transparent and conductive ITO thin films. The influence of the morphology and porosity on the optical properties is discussed.

Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

Energy Technology Data Exchange (ETDEWEB)

Subrahmanyam, A [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Barik, Ullash Kumar [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

2007-03-15

Indium ({approx}10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity {approx}3.40x10{sup -8} ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.

Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

International Nuclear Information System (INIS)

Subrahmanyam, A.; Barik, Ullash Kumar

2007-01-01

Indium (∼10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity ∼3.40x10 -8 ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity

Extraction of aluminium, gallium and indium by tri-n-octylamine from citric acid solutions

International Nuclear Information System (INIS)

Bol'shova, T.A.; Kaplunova, A.M.; Ershova, N.I.; Varshal, E.B.

1984-01-01

A study was made on aluminium, gallium and indium distribution in triocylam ine(toa)-citric acid system depending on pH of aqueous solution, concentration of components and foreign electrolytes. The methods of equilibrium shift, compe ting ions and isomolar series were used to find the component ratio in toa: Me: citric acid complexes equal to 3:1:2. The equation describing the extraction of citrate gallium, indium and aluminium complexes by trioctylamine was suggested. Using the difference in extraction behavior of the elements of aluminium, yttri um and lanthanum subgroup the extraction-chromatographic method of their separat ion, applied for the analysis of optical glasses was developed. The method is c haracterized by satisfactory reproduction, simplicity and expre

SU-E-I-14: Comparison of Iodine-Labeled and Indium-Labeled Antibody Biodistributions

Energy Technology Data Exchange (ETDEWEB)

Williams, L [Retired from City of Hope Medical Center, Arcadia, CA (United States)

2014-06-01

Purpose: It is often assumed that animal biodistributions of novel proteins are not dependent upon the radiolabel used in their determination. In units of percent injected dose per gram of tissue (%ID/g), organ uptake results (u) may be obtained using either iodine or metal as radioactive labels. Iodination is preferred as it is a one-step process whereas metal labeling requires two chemical procedures and therefore more protein material. It is important to test whether the radioactive tag leads to variation in the uptake value. Methods: Uptakes of 3antibodies to Carcinoembryonic Antigen (CEA) were evaluated in a nude mouse model bearing 150 to 300 mg LS174T human colon cancer xenografts. Antibodies included diabody (56 kDa), minibody (80kDa) and intact M5A (150 kDa) anti-CEA cognates. Both radioiodine and indium-111 labels were used with uptakes evaluated at 7 time(t) points out to 96 h. Ratios (R) of u(iodine-label)/u(indium-label) were determined for liver, spleen, kidneys, lung and tumor. Results: Hepatic loss was rapid for diabody and minibody; by 24 h their R values were only 2%; i.e., uptake of iodine was 2% of that of indium for these 2 antibodies. By contrast, R for the intact cognate was 50% at that time point. Splenic results were similar. Tumor uptake ratios did not depend upon the antibody type and were 50% at 24 h. Conclusions: Relatively rapid loss of iodine relative to indium in liver and spleen was observed in lower mass antibodies. Tumor ratios were larger and independent of antibody type. Aside from tumor, the R ratio of uptakes depended on the antibody type. R values decreased monotonically with time in all tissues and for all cognates. Using this ratio, one can possibly correct iodine-based u (t) results so that they resemble radiometal-derived biodistributions.

Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

Science.gov (United States)

Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

2015-04-22

This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

Indium--tin oxide films radio frequency sputtered from specially formulated high density indium--tin oxide targets

International Nuclear Information System (INIS)

Kulkarni, S.; Bayard, M.

1991-01-01

High density ITO (indium--tin oxide) targets doped with Al 2 O 3 and SiO 2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen--argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a sheet resistance of 15 Ω/sq for a thickness of 1100 A. Sputtering in an oxygen--argon gas mixture and annealing in air increased sheet resistance without a large effect on the transmission. Films sputtered in argon gas alone were transparent in the visible and the sheet resistance was found to be 100--180 Ω/sq for the same thickness, without annealing

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

Science.gov (United States)

Fischer, A. M.; Wei, Y. O.; Ponce, F. A.; Moseley, M.; Gunning, B.; Doolittle, W. A.

2013-09-01

We have studied the properties of thick InxGa1-xN films, with indium content ranging from x ˜ 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x ˜ 0.6. Surprisingly, the InxGa1-xN film with x ˜ 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (˜400 °C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions.

The energy of hydration and solvation of indium salts in the acetylacetone-InCl3-water system

International Nuclear Information System (INIS)

Kulawik, I.; Baumgartner, T.

1978-01-01

On the base of the previous papers concerning the investigations in the extraction systems the experiments were performed for the determination of thermodynamical distribution coefficient of indium salts between two phases in the system: acetylacetone-InCl 3 -water and the energy of hydration and solvation of that system. The results of the surface and interfacial potentials measurements of the system were presented as a function of the InCl 3 concentration in the system before the extraction. The extraction coefficients of indium as a function of concentration of InCl 3 in this system were determined. The method of the visible absorption spectra was used to the determination of concentration of indium in both phases after the extraction. The relation between the percentage of the extraction and the extraction coefficient was determined. The investigations were performed in the system containing 0.1 M HCl and 0.001 M HCl in the aqueous phase. The results of experiments are tabulated and graphically presented in figures. (author)

Measurement of the indium segregation in InGaN based LEDs with single atom sensitivity

International Nuclear Information System (INIS)

Jinschek, Joerg; Kisielowski, Christian; Van Dyck, Dirk; Geuens, Philippe

2003-01-01

In light emitting diodes (LED) consisting of GaN/InGaN/GaN quantum wells (QWs), the exact indium distribution inside the wells of the active region affects the performance of devices. Indium segregation can take place forming small InGaN clusters of locally varying composition. In the past, we used a local strain analysis from single HRTEM lattice images to determine the In composition inside the InGaN QWs with a resolution of 0.5 nm x 0.3 nm. Truly atomic resolution can be pursued by exploitation of intensity dependencies on the atomic number (Z) of the electron exit-wave (EW). In microscopes with sufficient sensitivity, local variations of amplitude and phase are found to be discrete with sample thickness, which allows for counting the number of atoms in each individual column of ∼0.08 nm diameter. In QW s of ∼17 percent of average indium concentration it is possible to discriminate between pure Ga columns and columns containing 1, 2, 3, or more In atoms because phase changes are discrete and element specific. The preparation of samples with atomically flat surfaces is a limiting factor for the application of the procedure

Concentration dependence of surface properties and molar volume of multicomponent system indium-tin-lead-bismuth

Energy Technology Data Exchange (ETDEWEB)

Dadashev, R; Kutuev, R [Complex Science Research Institute of the Science Academy of the Chechen Republic, 21 Staropromisl. shosse, Grozny 364096 (Russian Federation); Elimkhanov, D [Science Academy of the Chechen Republic (Russian Federation)], E-mail: edzhabrail@mail.ru

2008-02-15

The results of an experimental research of surface properties of the four-component system indium-tin-lead-bismuth are presented. The researches under discussion were carried out in a combined device in which the surface tension ({sigma}) is measured by the method of maximum pressure in a drop, and density ({rho}) is measured by advanced aerometry. Measurement errors are 0.7 % for surface tension measurement, and 0.2 % for density measurement. The study of the concentration dependence of {sigma} in this system has revealed the influence of the third and fourth components upon the characteristics of surface tension isotherms of the binary system indium-tin. It was found out that with an increase in the content of the third and fourth components the depth of the minimum on the surface tension isotherms of the indium-tin system {sigma} decreases. On the basis of the concentration dependence of the phenomenon of concentration bufferity is revealed. It is shown that despite the complex character, isotherms of {sigma} on beam sections of a multicomponent system do not contain qualitatively new features in comparison with the isotherms of these properties in lateral binary systems.

Influence of Fe{sup 3+} substitution on the dielectric and ferroelectric characteristics of Lead Indium Niobate

Energy Technology Data Exchange (ETDEWEB)

Divya, A.S.; Kumar, V., E-mail: vkumar10@yahoo.com

2015-07-15

Highlights: • Prepared phase-pure Fe{sup 3+}-substituted Lead Indium Niobate, Pb[(In{sub 0.50−x}Fe{sub x})Nb{sub 0.50}]O{sub 3} by sol–gel method. • Spontaneous Relaxor (R) → Ferroelectric (FE) transition observed for the composition with x = 0.20. • Local structural rearrangement responsible for R → FE transition has been confirmed by Raman spectroscopy. - Abstract: Lead Indium Niobate, Pb(In{sub 0.50}Nb{sub 0.50})O{sub 3} (PIN) is a complex perovskite that exhibits Relaxor (R) characteristics. In this study, we report the synthesis of phase-pure compositions in the system Pb[(In{sub 0.50−x}Fe{sub x})Nb{sub 0.50}]O{sub 3} by sol–gel method and discuss the influence of isovalent substitution of Indium by Iron on the dielectric and ferroelectric characteristics. Spontaneous transition to the Ferroelectric (FE) phase has been observed for the composition having x = 0.20. Local structural rearrangements responsible for R → FE transition have also been studied by Raman spectroscopy and are discussed in detail.

The technology of extracting gaseous fuel based on comprehensive in situ gasification and coalbed degassing

Directory of Open Access Journals (Sweden)

А. Н. Шабаров

2016-08-01

Full Text Available The study considers a comprehensive technology (designed and patented by the authors of developing coal and methane deposits which combines in situ gasification of lower coalbeds in the suite of rock bump hazardous gassy beds, extraction of coal methane and mechanized mining of coal. The first stage of the technology consists in mining gaseous fuel that enables one to extract up to 15-20 % of total energy from the suite of coalbeds. Geodynamic zoning is used to select positions for boring wells. Using the suggested technology makes it possible to solve a number of tasks simultaneously. First of all that is extracting gaseous fuel from the suite of coalbeds without running any mining works while retaining principal coalbeds in the suite and preparing them for future processing (unloading and degassing. During the first phase the methane-coal deposit works as a gas deposit only, the gas having two sources – extracted methane (which includes its locked forms, absorbed and adsorbed and the products of partial incineration of thin coalbeds, riders and seams from thee suite. The second stage consists in deep degassing and unloading of coal beds which sharply reduces the hazards of methane explosion and rock bumps, thus increasing the productivity of mechanized coal mining. During the second stage coal is mined in long poles with the account of degassing and unloading of coal beds, plus the data on gas dynamic structure of coal rock massif.

Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

Science.gov (United States)

Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

2015-08-01

Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

Selective growth of gold onto copper indium sulfide selenide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Witt, Elena; Parisi, Juergen; Kolny-Olesiak, Joanna [Oldenburg Univ. (Germany). Inst. of Physics, Energy and Semiconductor Research

2013-05-15

Hybrid nanostructures are interesting materials for numerous applications in chemistry, physics, and biology, due to their novel properties and multiple functionalities. Here, we present a synthesis of metal-semiconductor hybrid nanostructures composed of nontoxic I-III-VI semiconductor nanoparticles and gold. Copper indium sulfide selenide (CuInSSe) nanocrystals with zinc blende structure and trigonal pyramidal shape, capped with dodecanethiol, serve as an original semiconductor part of a new hybrid nanostructure. Metallic gold nanocrystals selectively grow onto vertexes of these CuInSSe pyramids. The hybrid nanostructures were studied by transmission electron microscopy, energy dispersive X-ray analysis, X-ray diffraction, and UV-Vis-absorption spectroscopy, which allowed us conclusions about their growth mechanism. Hybrid nanocrystals are generated by replacement of a sacrificial domain in the CuInSSe part. At the same time, small selenium nanocrystals form that stay attached to the remaining CuInSSe/Au particles. Additionally, we compare the synthesis and properties of CuInSSe-based hybrid nanostructures with those of copper indium disulfide (CuInS{sub 2}). CuInS{sub 2}/Au nanostructures grow by a different mechanism (surface growth) and do not show any selectivity. (orig.)

The theory of the anti-bouncer of dynamic bumping on the plough at forced oscillations of the framework

Directory of Open Access Journals (Sweden)

A.P. Tarverdyan

2017-12-01

Full Text Available In the work the problem of the use of the external revolting factors is considered which arise from fluctuation of traction resistance of between each other pair-connected yoke and the hulls of the plow, within 27÷98%, with average coefficient of unevenness 3÷5 as power source for irrevocable performance of technological process with due quality.For execution of the principal condition of support of normal operation of the conjugate casing - supports of identity of parameters of their oscillations and congestion avoidance and deviation prefir-trees of admissible amplitude in the case of accidental collision with a hindrance, on the middle of a balance the shock-absorber of dynamic shock is provided.The solution of the task of optimization of parameters of the shock-absorber is based on value of admissible maximum amplitude of oscillations of the slave housing is made in three versions: plough share edge meeting with a motionless obstacle; case meeting with a mobile obstacle; operation of the fluctuating case in non-uniform, on specific resistance, soil conditions with unevenness coefficient to δ=2,9. After the analysis of results of the theory of calculation for three options is established: rigidity, C″ springs of an udarogasitel should be calculated by option at which the difference of resistance of forward and back cases is maximum. Keywords: Plough, Framework, Oscillation, Anti-bouncer, Bumping, Dynamics

Development of Interconnect Technologies for Particle Detectors

Energy Technology Data Exchange (ETDEWEB)

Tripathi, Mani [Univ. of California, Davis, CA (United States)

2015-01-29

This final report covers the three years of this grant, for the funding period 9/1/2010 - 8/31/2013. The project consisted of generic detector R&D work at UC Davis, with an emphasis on developing interconnect technologies for applications in HEP. Much of the work is done at our Facility for Interconnect Technologies (FIT) at UC Davis. FIT was established using ARRA funds, with further studies supported by this grant. Besides generic R&D work at UC Davis, FIT is engaged in providing bump bonding help to several DOE supported detector R&D efforts. Some of the developmental work was also supported by funding from other sources: continuing CMS project funds and the Linear Collider R&D funds. The latter program is now terminated. The three year program saw a good deal of progress on several fronts, which are reported here.

Mass measurements of neutron-rich indium isotopes toward the N =82 shell closure

Science.gov (United States)

Babcock, C.; Klawitter, R.; Leistenschneider, E.; Lascar, D.; Barquest, B. R.; Finlay, A.; Foster, M.; Gallant, A. T.; Hunt, P.; Kootte, B.; Lan, Y.; Paul, S. F.; Phan, M. L.; Reiter, M. P.; Schultz, B.; Short, D.; Andreoiu, C.; Brodeur, M.; Dillmann, I.; Gwinner, G.; Kwiatkowski, A. A.; Leach, K. G.; Dilling, J.

2018-02-01

Precise mass measurements of the neutron-rich In-130125 isotopes have been performed with the TITAN Penning trap mass spectrometer. TITAN's electron beam ion trap was used to charge breed the ions to charge state q =13 + thus providing the necessary resolving power to measure not only the ground states but also isomeric states at each mass number. In this paper, the properties of the ground states are investigated through a series of mass differentials, highlighting trends in the indium isotopic chain as compared to its proton-magic neighbor, tin (Z =50 ). In addition, the energies of the indium isomers are presented. The (8-) level in 128In is found to be 78 keV lower than previously thought and the (21 /2- ) isomer in 127In is shown to be lower than the literature value by more than 150 keV.

Electrothermal atomization laser-excited atomic fluorescence spectroscopy for the determination of indium

International Nuclear Information System (INIS)

Aucelio, R.Q.; Smith, B.W.; Winefordner, J.D.

1998-01-01

A dye laser pumped by a high-repetition-rate copper vapor laser was used as the excitation source to determine indium at parts-per-trillion level by electrothermal atomization laser-excited atomic fluorescence spectrometry (ETA-LEAFS). A comparison was made between wall atomization, in pyrolytic and nonpyrolytic graphite tubes, and platform atomization. The influence of several chemical modifiers either in solution or precoated in the graphite tube was evaluated. The influence of several acids and NaOH in the analyte solution was also studied. Optimization of the analytical conditions was carried out to achieve the best signal-to-background ratio and consequently an absolute limit of detection of 1 fg. Some possible interferents of the method were evaluated. The method was evaluated by determining indium in blood, urine, soil, and urban dust samples. Recoveries between 99.17 and 109.17% are reported. A precision of 4.1% at the 10 ng g -1 level in water standards was achieved. copyright 1998 Society for Applied Spectroscopy

Anomalous electrical properties of Pbsub(1-x)Snsub(x)Te layers with indium impurity

International Nuclear Information System (INIS)

Gejman, K.I.; Drabkin, I.A.; Matveenko, A.V.; Mozhaev, E.A.; Parfen'ev, R.V.

1977-01-01

Galvanomagnetic properties of indium doped (5x10 -3 -2x10 -1 at.% In) Pbsub(1-x)Snsub(x)Te monocrystal layers of n-type (x=0.1 - 0.22) sprayed on the (3) spalls of BaF 2 have been investigated. The layers with In display high homogeneity and lower electron density at 77 K, than the layers without In. With decreasing temperature below 20 K in the indium doped Pbsub(1-x)Snsub(x)Te layers an anomalous sharp increase of the electron density calculated from the Hall coefficient and reduction in electron mobility have been observed. The phenomenon under observation is related to the behaviour of indium under conditions of a possible structural phase transition initiated by introducing tin into PbTe. Investigation of the Shubnikov-de Gaas (SG) oscillations confirms the anomalous temperature dependence of the electron density. Distinctive features have been revealed in the SG oscillations of magnetoresistance in the Pbsub(1-x)Snsub(x)Te layers with In and without it, caused by deformations occurring in the films due to different coefficients of linear expansion of the material and a substrate. The splitting energy in the conduction band of the Pbsub(1-x)Snsub(x)Te layers has been determined, and the shift constant of the deformation potential has been estimated

Structural, optical and electrical properties of indium tin oxide thin films prepared by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Benamar, E.; Rami, M.; Messaoudi, C.; Sayah, D.; Ennaoui, A. [Deptartmento de Physique, Laboratoire de Physique des Materiaux, Faculte des Sciences, BP 1014, Ave Inb Battouta, Rabat (Morocco)

1998-11-27

Spray pyrolysis process has been used to deposit highly transparent and conducting films of tin-doped indium oxide onto glass substrates. The electrical, structural and optical properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrate. The morphology of the surface as a function of the substrate temperature has been studied using atomic force microscopy. XRD has shown that deposited films are polycrystalline without second phases and have a preferred orientation (4 0 0). Indium tin oxide layers with low resistivity values around 4x10{sup -5} {Omega} cm and transmission coefficients in the visible and near-infrared range of about 85-90% have been easily obtained

Low-temperature grown indium oxide nanowire-based antireflection coatings for multi-crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, Yu-Cian; Chen, Chih-Yao; Chen, I Chen [Institute of Materials Science and Engineering, National Central University, Taoyuan (China); Kuo, Cheng-Wen; Kuan, Ta-Ming; Yu, Cheng-Yeh [TSEC Corporation, Hsinchu (China)

2016-08-15

Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi-crystalline silicon (mc-Si) solar cells has been investigated. The low-temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O{sub 2}-Ar system using indium nanocrystals as seed particles via the self-catalyzed growth mechanism. The size-dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short-circuit current (from 35.39 to 38.33 mA cm{sup -2}) without deterioration of other performance parameters is observed for mc-Si solar cells coated with InO NWs. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Progress Report: Feasibility Study of an Indium Scintillator Solar Neutrino Experiment

International Nuclear Information System (INIS)

Bellefon, A. de; Barloutaud, R.; Borg, A.; Ernwein, J.; Mosca, L.

1989-09-01

In this document, we report on the progress made to demonstrate the feasibility of an experiment which would measure for the first time the two line sources of solar neutrinos resulting from electron capture by 7 Be and from the p-e-p reaction inside the sun. The detector under study consists of scintillator containing 10 tons of Indium

Scaled-up solvothermal synthesis of nanosized metastable indium oxyhydroxide (InOOH) and corundum-type rhombohedral indium oxide (rh-In{sub 2}O{sub 3})

Energy Technology Data Exchange (ETDEWEB)

Schlicker, Lukas; Bekheet, Maged F.; Gurlo, Aleksander [Technische Univ. Berlin (Germany). Fachgebiet Keramische Werkstoffe

2017-03-01

Phase pure metastable indium oxyhydroxide (InOOH) with crystallite size in the range ca. 2-7 nm is synthesized by a nonaqueous solvothermal synthesis route in ethanol. The influence of synthesis parameters such as temperature, basicity (pH), synthesis time, and water content is carefully addressed. T-pH maps summarize the impact of synthesis temperature and pH and reveal that phase pure InOOH is obtained in water-free solutions at mild temperatures (150-180 C) in highly basic conditions (pH>12). Subsequent calcination of InOOH at 375-700 C in ambient air atmosphere results in metastable nanoscaled rhombohedral indium oxide (rh-In{sub 2}O{sub 3}). The synthesis protocol for phase pure nanocrystalline InOOH material was successfully upscaled allowing for obtaining ca. 3 g of phase-pure InOOH with a yield of ca. 78%. The upscaled InOOH and rh-In{sub 2}O{sub 3} batches are now available for a detailed in-situ characterization of the mechanism of decomposition of InOOH to rh-In{sub 2}O{sub 3} to c-In{sub 2}O{sub 3} as well as for the characterization of the functional properties of InOOH and rh-In{sub 2}O{sub 3} materials.

Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

International Nuclear Information System (INIS)

Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.

2014-01-01

In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band

Nuclear structure studies on indium and tin isotope chains by means of laser spectroscopy

International Nuclear Information System (INIS)

Eberz, J.

1986-11-01

In a collaboration with GSI in Darmstadt and ISOLDE in Geneva the hyperfine structure (HFS) and the isotope shift (IS) of the indium isotopes from 104 In - 127 In in their ground and isomeric states could be studied. Additionally the tin isotopes 109 Sn and 111 Sn could be measured. In tin the transition 5p 2 1 S 0 → 5p6s 3 P 1 with λ = 563 nm was studied. In indium the transition 5p 2 P 1/2 → 6s 2 S 1/2 with λ = 410 nm and 5p 2 P 3/2 → 6s 2 S 1/2 with λ = 451 nm could be measured. The magnetic dipole moments and electric quadrupole moments determined from the measurements of the HFS can be sufficiently explained in the framework of the single-particle model. From the moments the configurations and spins of the studied nuclear states can be stated. In 109 Sn the nuclear spin was determined to I = 5/2. The measurement of the IS in two lines in 108 In allowed regarding the coupling rules for nuclear moments the determination of the nuclear spin. The spin of the 40 m isomers of the 108m In can be stated to I = 2. The mean square nuclear charge radius exhibits a parabolic slope the quadratic part of which with a maximum in the shell center at N = 66 between the neutron numbers N = 50 and N = 82 can be understood as sum of contributions of a surface correlation, i.e. a quadrupole deformation as well as eventually present higher order terms or a change of the surface skin density. The deformation determinable by this description is both for tin and for indium essentially larger than the deformation from the B(E2) values of tin or from the intrinsic quadrupole moments in indium derived from the HFS. (orig./HSI) [de

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

International Nuclear Information System (INIS)

Kumar, Rahul; Mukhopadhyay, P.; Bag, A.; Jana, S. Kr.; Chakraborty, A.; Das, S.; Mahata, M. Kr.; Biswas, D.

2015-01-01

Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

Energy Technology Data Exchange (ETDEWEB)

Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, P. [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Bag, A.; Jana, S. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Chakraborty, A. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India); Das, S.; Mahata, M. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

2015-01-01

Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate.