WorldWideScience

Sample records for technologies indium bumps

  1. Two-Step Plasma Process for Cleaning Indium Bonding Bumps

    Science.gov (United States)

    Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

    2009-01-01

    A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

  2. Development of an Indium Bump Bond Process for Silicon Pixel Detectors at PSI

    CERN Document Server

    Brönnimann, C; Gobrecht, J; Heising, S; Horisberger, M; Horisberger, R P; Kästli, H C; Lehmann, J; Rohe, T; Streuli, S; Broennimann, Ch.

    2006-01-01

    The hybrid pixel detectors used in the high energy physics experiments currently under construction use a three dimensional connection technique, the so-called bump bonding. As the pitch below 100um, required in these applications, cannot be fullfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflown indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector. The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflown afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a seco...

  3. Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.; Dahiya, V.; Cavallo, F. [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Myers, S. [SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States); Krishna, S., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States)

    2016-02-29

    We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

  4. Bump Bonding Using Metal-Coated Carbon Nanotubes

    Science.gov (United States)

    Lamb, James L.; Dickie, Matthew R.; Kowalczyk, Robert S.; Liao, Anna; Bronikowski, Michael J.

    2012-01-01

    Bump bonding hybridization techniques use arrays of indium bumps to electrically and mechanically join two chips together. Surface-tension issues limit bump sizes to roughly as wide as they are high. Pitches are limited to 50 microns with bumps only 8-14 microns high on each wafer. A new process uses oriented carbon nanotubes (CNTs) with a metal (indium) in a wicking process using capillary actions to increase the aspect ratio and pitch density of the connections for bump bonding hybridizations. It merges the properties of the CNTs and the metal bumps, providing enhanced material performance parameters. By merging the bumps with narrow and long CNTs oriented in the vertical direction, higher aspect ratios can be obtained if the metal can be made to wick. Possible aspect ratios increase from 1:1 to 20:1 for most applications, and to 100:1 for some applications. Possible pitch density increases of a factor of 10 are possible. Standard capillary theory would not normally allow indium or most other metals to be drawn into the oriented CNTs, because they are non-wetting. However, capillary action can be induced through the ability to fabricate oriented CNT bundles to desired spacings, and the use of deposition techniques and temperature to control the size and mobility of the liquid metal streams and associated reservoirs. This hybridization of two technologies (indium bumps and CNTs) may also provide for some additional benefits such as improved thermal management and possible current density increases.

  5. Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

    Directory of Open Access Journals (Sweden)

    Sibylle Dieckerhoff

    2008-01-01

    Full Text Available The impact of a reduced package stray inductance on the switching performance of fast power MOSFETs is discussed applying advanced 3D packaging technologies. Starting from an overview over new packaging approaches, a solder bump technology using a flexible PI substrate is exemplarily chosen for the evaluation. Measurement techniques to determine the stray inductance are discussed and compared with a numerical solution based on the PEEC method. Experimental results show the improvement of the voltage utilization while there is only a slight impact on total switching losses.

  6. Speed Bumps on the Road to Sustainability - Energy Technology and Geopolitics

    Energy Technology Data Exchange (ETDEWEB)

    Mandil, C.; Taylor, P.; Van Der Linde, C.; Buchner, B.; Ramsay, W.C.; Lipponen, J.; Meier, A.; Berkeley, L.; Di Paola-Galloni, J.L.; Jaureguy-Naudin, M.; Charpin, J.M.; Segar, Ch.; Zaleski, P.; Lesourne, J.; Pires Santos, A.; Menard, D.; Neuhoff, K.; Oettinger, G.

    2011-07-01

    This document gathers the slides of the available presentations given at the 2011 issue of the annual Conference of the Ifri (French Institute of International Relations) Energy Program: 1 - An Energy revolution under way (Peter Taylor, Head of the Energy Technology Division, International Energy Agency); 2 - A look back at Cancun: 'top down' versus 'bottom up' (Barbara Buchner, Director of the CPI - Climate Policy Initiative - Venice office; 3 - CCS: Still in the Starting Blocks? (Juho Lipponen, Head of CCS Unit, International Energy Agency); 4 - Energy Efficiency: Does Anyone Care? (Alan Meier, Senior Scientist and Principal Investigator, Lawrence Berkeley National Laboratory); 5 - The Transport Sector: Anything Goes? (Jean-Luc di Paola-Galloni, Corporate Vice-President, Sustainable Development and External Affairs, Valeo Group); 6 - The Mediterranean Ring: Power or Politics? (Jean-Michel Charpin, Inspecteur General des Finances); 7 - Iran gas and Iraq oil (Chris Segar, Regional Analyst/Middle East and North Africa, International Energy Agency); 8 - Nuclear Power: New Players, New Game, New Rules (Pierre Zaleski, General delegate for the Center of Geopolitics of Energy and Raw Materials, Universite Paris-Dauphine); 9 - The Grid: a Generic Speed Bump (Antonio Pires Santos, Energy and Utilities Industry Leader, Southwest Europe, IBM); 10 - Intellectual Property Rights/Technology transfer (Dominique Menard, Partner, Hogan Lovells (Paris) LLP); 11 - Energy Markets: Conducive to Sustainability (Karsten Neuhoff, Director of the CPI - Climate Policy Initiative - Berlin office, German Institute for Economic Research, DIW Berlin)

  7. Speed Bumps on the Road to Sustainability - Energy Technology and Geopolitics

    International Nuclear Information System (INIS)

    Mandil, C.; Taylor, P.; Van Der Linde, C.; Buchner, B.; Ramsay, W.C.; Lipponen, J.; Meier, A.; Berkeley, L.; Di Paola-Galloni, J.L.; Jaureguy-Naudin, M.; Charpin, J.M.; Segar, Ch.; Zaleski, P.; Lesourne, J.; Pires Santos, A.; Menard, D.; Neuhoff, K.; Oettinger, G.

    2011-01-01

    This document gathers the slides of the available presentations given at the 2011 issue of the annual Conference of the Ifri (French Institute of International Relations) Energy Program: 1 - An Energy revolution under way (Peter Taylor, Head of the Energy Technology Division, International Energy Agency); 2 - A look back at Cancun: 'top down' versus 'bottom up' (Barbara Buchner, Director of the CPI - Climate Policy Initiative - Venice office; 3 - CCS: Still in the Starting Blocks? (Juho Lipponen, Head of CCS Unit, International Energy Agency); 4 - Energy Efficiency: Does Anyone Care? (Alan Meier, Senior Scientist and Principal Investigator, Lawrence Berkeley National Laboratory); 5 - The Transport Sector: Anything Goes? (Jean-Luc di Paola-Galloni, Corporate Vice-President, Sustainable Development and External Affairs, Valeo Group); 6 - The Mediterranean Ring: Power or Politics? (Jean-Michel Charpin, Inspecteur General des Finances); 7 - Iran gas and Iraq oil (Chris Segar, Regional Analyst/Middle East and North Africa, International Energy Agency); 8 - Nuclear Power: New Players, New Game, New Rules (Pierre Zaleski, General delegate for the Center of Geopolitics of Energy and Raw Materials, Universite Paris-Dauphine); 9 - The Grid: a Generic Speed Bump (Antonio Pires Santos, Energy and Utilities Industry Leader, Southwest Europe, IBM); 10 - Intellectual Property Rights/Technology transfer (Dominique Menard, Partner, Hogan Lovells (Paris) LLP); 11 - Energy Markets: Conducive to Sustainability (Karsten Neuhoff, Director of the CPI - Climate Policy Initiative - Berlin office, German Institute for Economic Research, DIW Berlin)

  8. Eyelid bump

    Science.gov (United States)

    ... It appears as a red, swollen bump that looks like a pimple. It is often tender to the touch. Causes A stye is caused by a blockage of one of the oil glands in the eyelids. This allows bacteria to grow inside the blocked gland. Styes are ...

  9. New magic angle bumps and magic translation bumps

    International Nuclear Information System (INIS)

    Seeman, J.

    1983-01-01

    SLC beams of opposite charge can be transversely deflected in the same direction by RF fields in the accelerating cavities caused by girder tilts, coupler-asymmetries, or manufacturing errors. A symmetric deflection can be corrected by a magic angle bump if the deflection is located adjacent to one of the linac quadrupoles. However, if the deflection is located between quadrupoles, two magic angle bumps or a magic angle bump and a magic translation bump are needed for the correction. Several examples of translation bumps are included. A new magic angle bump is also presented which is longitudinally compressed and has significantly reduced particle excursions. Finally, if new correctors are added midway along the girders so that the number of correctors are doubled, then the longitudinal extent and the maximum particle excursion of these new magic bumps can be further reduced

  10. Technological process and optimum design of organic materials vacuum pyrolysis and indium chlorinated separation from waste liquid crystal display panels

    Energy Technology Data Exchange (ETDEWEB)

    Ma, En; Xu, Zhenming, E-mail: zmxu@sjtu.edu.cn

    2013-12-15

    Highlights: • The vacuum pyrolysis–vacuum chlorinated separation system was proposed to recover the waste LCD panel. • The system can recycle the whole waste LCD panels efficiently without negative effects to environment. • The 82.03% of the organic materials was reclaimed. All pyrolysis products can be utilized by a reasonable way. • The separation of indium was optimized by the central composite design (CCD) under response surface methodology (RSM). • The recovery ratio of indium was further increased to 99.97%. -- Abstract: In this study, a technology process including vacuum pyrolysis and vacuum chlorinated separation was proposed to convert waste liquid crystal display (LCD) panels into useful resources using self-design apparatuses. The suitable pyrolysis temperature and pressure are determined as 300 °C and 50 Pa at first. The organic parts of the panels were converted to oil (79.10 wt%) and gas (2.93 wt%). Then the technology of separating indium was optimized by central composite design (CCD) under response surface methodology (RSM). The results indicated the indium recovery ratio was 99.97% when the particle size is less than 0.16 mm, the weight percentage of NH{sub 4}Cl to glass powder is 50 wt% and temperature is 450 °C. The research results show that the organic materials, indium and glass of LCD panel can be recovered during the recovery process efficiently and eco-friendly.

  11. International joint research project of venture seeds excavating type in fiscal 1999 (revised) - venture seeds No.3. Report on achievements in developing bump forming technologies for high-density semiconductor connection; 1999 nendo (hosei) venture seeds hakkutsugata kokusai kyodo kenkyu jigyo - venture seeds No.3. Komitsudo handotai setsuzokuyo bump gata keisei gijutsu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Development has been advanced on a new flip chip technology with high efficiency and reliability to mount on lead frames and substrates the semiconductor devices that have been made higher in density and function and smaller in size. Specifically, discussions were given on a bump forming technology using micro balls with high accuracy and sphericity. With this technology, bumps are formed with high accuracy and efficiency by transferring and bonding the micro balls onto electrodes. Activities were taken in the following five areas: 1) discussions on the micro ball arranging technology, 2) optimization and evaluation on bed films, 3) manufacture and evaluation on micro balls, 4) overall evaluation and improvement discussion on quality and cost, and 5) analysis of thermal stress on soldered balls. In Item 1), micro balls are transferred onto pads after removing excess balls by sucking them into a suction head while having the micro balls float in a container by means of vibration. The suction arrangement plates were discussed and the suction system was optimized, whereas it was verified that balls with diameter of 100 {mu} m can be transferred and bonded onto pads of the chips without excess and insufficiency. (NEDO)

  12. A flip chip process based on electroplated solder bumps

    Science.gov (United States)

    Salonen, J.; Salmi, J.

    1994-01-01

    Compared to wire bonding and TAB, flip chip technology using solder joints offers the highest pin count and packaging density and superior electrical performance. The chips are mounted upside down on the substrate, which can be made of silicon, ceramic, glass or - in some cases - even PCB. The extra processing steps required for chips are the deposition of a suitable thin film metal layer(s) on the standard Al pad and the formation of bumps. Also, the development of new fine line substrate technologies is required to utilize the full potential of the technology. In our bumping process, bump deposition is done by electroplating, which was chosen for its simplicity and economy. Sputter deposited molybdenum and copper are used as thin film layers between the aluminum pads and the solder bumps. A reason for this choice is that the metals can be selectively etched after bumping using the bumps as a mask, thus circumventing the need for a separate mask for etching the thin film metals. The bumps are electroplated from a binary Pb-Sn bath using a thick liquid photoresist. An extensively modified commercial flip chip bonder is used for alignment and bonding. Heat assisted tack bonding is used to attach the chips to the substrate, and final reflow joining is done without flux in a vacuum furnace.

  13. HANFORD WASTE TANK BUMP ACCIDENT & CONSEQUENCE ANALYSIS

    Energy Technology Data Exchange (ETDEWEB)

    MEACHAM, J.E.

    2005-02-22

    Postulated physical scenarios leading to tank bumps were examined. A combination of a substantial supernatant layer depth, supernatant temperatures close to saturation, and high sludge temperatures are required for a tank bump to occur. Scenarios postulated at various times for sludge layers lacking substantial supernatant, such as superheat within the layer and fumarole formation leading to a bump were ruled out.

  14. Nonlinear calculations for bump Cepheids

    International Nuclear Information System (INIS)

    Hodson, S.W.; Cox, A.N.

    1979-01-01

    Hydrodynamic calculations to find strictly periodic solutions for the fundamental mode pulsations of 7 M/sub sun/ models were made using the von Sengbusch--Stellingwerf relaxation method. The models have a helium enrichment in the surface convection zones to Y = 0.78, which from the linear theory period ratio π 2 /π 0 and the Simon and Schmidt resonance hypothesis, should give the observed Hertzsprung progression of light and velocity curve bump phase with period. These surface helium enhanced models show the proper nonlinear bump phase behavior without resort to any mass loss before or during the blue loop phases of yellow giant evolution. At 6000 K and the evolution theory luminosity of 4744 L/sub sun/ for 7 M/sub sun/, that is, at a fundamental mode period of 8.5 day, the velocity curve bump is well after the maximum expansion velocity. At 5400 K and at the same luminosity (period of 12.5 days), there is a bump on the velocity curve well before maximum expansion velocity time. The latter case seems to exhibit the Christy echos but not the former. The echo interpretation may not be appropriate for these masses which are larger than the anomalous masses used by Christy, Stobie, and Adams. Resonance of the fundamental and second overtone modes should not necessarily show echos of surface disturbances from the center. The conclusion is that helium enrichment in the surface convection zones can adequately explain observations of bump Cepheids at evolution theory masses. 12 references

  15. Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

    Science.gov (United States)

    Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

    2017-02-01

    High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

  16. A Metal Bump Bonding Method Using Ag Nanoparticles as Intermediate Layer

    Science.gov (United States)

    Fu, Weixin; Nimura, Masatsugu; Kasahara, Takashi; Mimatsu, Hayata; Okada, Akiko; Shoji, Shuichi; Ishizuka, Shugo; Mizuno, Jun

    2015-11-01

    The future development of low-temperature and low-pressure bonding technology is necessary for fine-pitch bump application. We propose a bump structure using Ag nanoparticles as an intermediate layer coated on a fine-pitch Cu pillar bump. The intermediate layer is prepared using an efficient and cost-saving squeegee-coating method followed by a 100°C baking process. This bump structure can be easily flattened before the bonding process, and the low-temperature sinterability of the nanoparticles is retained. The bonding experiment was successfully performed at 250°C and 39.8 MPa and the bonding strength was comparable to that achieved via other bonding technology utilizing metal particles or porous material as bump materials.

  17. Vehicle speed control using road bumps

    Directory of Open Access Journals (Sweden)

    T. A. O. Salau

    2004-06-01

    Full Text Available Road bumps play a crucial role in enforcing speed limits, thereby preventing overspeeding of vehicles. It significantly contributes to the overall road safety objective through the prevention of accidents that lead to deaths of pedestrians and damage of vehicles. Despite the importance of road bumps, very little research has been done to investigate into their design. While documentation exists on quantitative descriptions of road bumps, they offer little guidance to decision making. This work presents a unique approach to solving road bumps design problems. The results of our study reveal three important road bumps variables that influence the control of vehicle speeds. The key variables are bump height, bump width, and effective distance between two consecutive road bumps. Since vehicle speed control is the ultimate aim of this study the relationship between vehicle speed and other variables earlier mentioned is established. Vehicle speed is defined as the product of frequency at which a vehicle is moving over road bumps and the sum of effective distance between two consecutive road bumps. In the determination of bump height we assume a conical shaped curve for analysis as a matter of research strategy. Based on this, two stages of motion were analysed. The first concerns the motion over the bump itself while the second relates to the motion between two consecutive road bumps. Fourier series was then used to formulate a holistic equation that combines these two stages. We used trigonometric functions to model the behaviour of the first stage while with the second stage giving a functional value of zero since no changes in height are observed. We carried out vibration analysis to determine the effect of road bumps on a vehicular system. Arising from this a model component is referred to as an isolation factor. This offers guidance to the safe frequency at which vehicles could travel over road bumps. The work appears to contribute to knowledge

  18. Recent advances in understanding the reminiscence bump

    DEFF Research Database (Denmark)

    Koppel, Jonathan; Rubin, David C.

    2016-01-01

    The reminiscence bump is the increased proportion of autobiographical memories from youth and early adulthood observed in adults over 40. It is one of the most robust findings in autobiographical-memory research. Although described as a single period from which there are more memories, a recent...... meta-analysis that reported the beginning and ending ages of the bump from individual studies found that different classes of cues produce distinct bumps that vary in size and temporal location. The bump obtained in response to cue words is both smaller and located earlier in the life span than...

  19. Running bumps from stealth bosons

    Science.gov (United States)

    Aguilar-Saavedra, J. A.

    2018-03-01

    For the `stealth bosons' S, light boosted particles with a decay S → A A → q \\bar{q} q \\bar{q} into four quarks and reconstructed as a single fat jet, the groomed jet mass has a strong correlation with groomed jet substructure variables. Consequently, the jet mass distribution is strongly affected by the jet substructure selection cuts when applied on the groomed jet. We illustrate this fact by recasting a CMS search for low-mass dijet resonances and show a few representative examples. The mass distributions exhibit narrow and wide bumps at several locations in the 100-300 GeV range, between the masses of the daughter particles A and the parent particle S, depending on the jet substructure selection. This striking observation introduces several caveats when interpreting and comparing experimental results, for the case of non-standard signatures. The possibility that a single boosted particle decaying hadronically produces multiple bumps, at quite different jet masses, and depending on the event selection, brings the anomaly chasing game to the next level.

  20. Running bumps from stealth bosons

    International Nuclear Information System (INIS)

    Aguilar-Saavedra, J.A.

    2018-01-01

    For the 'stealth bosons' S, light boosted particles with a decay S → AA → q anti qq anti q into four quarks and reconstructed as a single fat jet, the groomed jet mass has a strong correlation with groomed jet substructure variables. Consequently, the jet mass distribution is strongly affected by the jet substructure selection cuts when applied on the groomed jet. We illustrate this fact by recasting a CMS search for low-mass dijet resonances and show a few representative examples. The mass distributions exhibit narrow and wide bumps at several locations in the 100-300 GeV range, between the masses of the daughter particles A and the parent particle S, depending on the jet substructure selection. This striking observation introduces several caveats when interpreting and comparing experimental results, for the case of non-standard signatures. The possibility that a single boosted particle decaying hadronically produces multiple bumps, at quite different jet masses, and depending on the event selection, brings the anomaly chasing game to the next level. (orig.)

  1. Condensation on Slippery Asymmetric Bumps

    Science.gov (United States)

    Park, Kyoo-Chul; Kim, Philseok; Aizenberg, Joanna

    2016-11-01

    Controlling dropwise condensation by designing surfaces that enable droplets to grow rapidly and be shed as quickly as possible is fundamental to water harvesting systems, thermal power generation, distillation towers, etc. However, cutting-edge approaches based on micro/nanoscale textures suffer from intrinsic trade-offs that make it difficult to optimize both growth and transport at once. Here we present a conceptually different design approach based on principles derived from Namib desert beetles, cacti, and pitcher plants that synergistically couples both aspects of condensation and outperforms other synthetic surfaces. Inspired by an unconventional interpretation of the role of the beetle's bump geometry in promoting condensation, we show how to maximize vapor diffusion flux at the apex of convex millimetric bumps by optimizing curvature and shape. Integrating this apex geometry with a widening slope analogous to cactus spines couples rapid drop growth with fast directional transport, by creating a free energy profile that drives the drop down the slope. This coupling is further enhanced by a slippery, pitcher plant-inspired coating that facilitates feedback between coalescence-driven growth and capillary-driven motion. We further observe an unprecedented six-fold higher exponent in growth rate and much faster shedding time compared to other surfaces. We envision that our fundamental understanding and rational design strategy can be applied to a wide range of phase change applications.

  2. Germanium and indium

    Science.gov (United States)

    Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    Germanium and indium are two important elements used in electronics devices, flat-panel display screens, light-emitting diodes, night vision devices, optical fiber, optical lens systems, and solar power arrays. Germanium and indium are treated together in this chapter because they have similar technological uses and because both are recovered as byproducts, mainly from copper and zinc sulfides.The world’s total production of germanium in 2011 was estimated to be 118 metric tons. This total comprised germanium recovered from zinc concentrates, from fly ash residues from coal burning, and from recycled material. Worldwide, primary germanium was recovered in Canada from zinc concentrates shipped from the United States; in China from zinc residues and coal from multiple sources in China and elsewhere; in Finland from zinc concentrates from the Democratic Republic of the Congo; and in Russia from coal.World production of indium metal was estimated to be about 723 metric tons in 2011; more than one-half of the total was produced in China. Other leading producers included Belgium, Canada, Japan, and the Republic of Korea. These five countries accounted for nearly 95 percent of primary indium production.Deposit types that contain significant amounts of germanium include volcanogenic massive sulfide (VMS) deposits, sedimentary exhalative (SEDEX) deposits, Mississippi Valley-type (MVT) lead-zinc deposits (including Irish-type zinc-lead deposits), Kipushi-type zinc-lead-copper replacement bodies in carbonate rocks, and coal deposits.More than one-half of the byproduct indium in the world is produced in southern China from VMS and SEDEX deposits, and much of the remainder is produced from zinc concentrates from MVT deposits. The Laochang deposit in Yunnan Province, China, and the VMS deposits of the Murchison greenstone belt in Limpopo Province, South Africa, provide excellent examples of indium-enriched deposits. The SEDEX deposits at Bainiuchang, China (located in

  3. The reminiscence bump reconsidered: Children's prospective life stories show a bump in young adulthood

    DEFF Research Database (Denmark)

    Bohn, Annette; Berntsen, Dorthe

    2011-01-01

    showed a clear bump in young adulthood. In Study 2, children were prompted by word cues to write down events from their future lives. The events generated consisted mostly of non-life-script events, and those events did not show a bump in young adulthood. Our findings challenge prevailing explanations...

  4. Low-cost bump-bonding processes for high energy physics pixel detectors

    CERN Document Server

    AUTHOR|(CDS)2069357; Blank, Thomas; Colombo, Fabio; Dierlamm, Alexander Hermann; Husemann, Ulrich; Kudella, Simon; Weber, M

    2016-01-01

    In the next generation of collider experiments detectors will be challenged by unprecedented particle fluxes. Thus large detector arrays of highly pixelated detectors with minimal dead area will be required at reasonable costs. Bump-bonding of pixel detectors has been shown to be a major cost-driver. KIT is one of five production centers of the CMS barrel pixel detector for the Phase I Upgrade. In this contribution the SnPb bump-bonding process and the production yield is reported. In parallel to the production of the new CMS pixel detector, several alternatives to the expensive photolithography electroplating/electroless metal deposition technologies are developing. Recent progress and challenges faced in the development of bump-bonding technology based on gold-stud bonding by thin (15 μm) gold wire is presented. This technique allows producing metal bumps with diameters down to 30 μm without using photolithography processes, which are typically required to provide suitable under bump metallization. The sh...

  5. Bump masses for BL Her stars

    International Nuclear Information System (INIS)

    Davis, C.G.

    1982-01-01

    The masses of classical Cepheids can be determined by using the phase of the Hertzsprung bump on the light or velocity curve, Cox-Stewart opacities, and nonlinear pulsation theory. The fact that these bump masses are some 60% lower than the evolutionary masses raises some questions about this approach. In support of our method, we calculate the light curve for BL Her, a population II Cepheid, with an observed bump on the declining portion of its light curve. The nonlinear hydrodynamic model we use (Davis and Davison - 1978) resolves the light curve by dynamic zoning and allows us the opportunity to make a direct comparison of the calculated light curve to the observations, using a prescribed mass, luminosity and effective temperature. The parameters for BL Her are from a linear model (Hodson, Cox, and King - 1982) that has nearly the correct period (1./sup d/2) and the correct period ratio from resonance theory (π 2 /π 0 = 0.53) for a bump to appear on the declining portion of the light curve as observed. These parameters are: M = 0.55 M, L = 95.0 L, and T/sub eff/ = 6500 K. This mass is near the evolutionary mass as described by Schwartzschild and Haerm (1970). The model results agree well with the observations and the color-T/sub eff/ relation has the same slope as that observed for RR Lyrae stars by the Oke, Giver and Searle (1965) relationship

  6. Reminiscence bump in memory for public events

    NARCIS (Netherlands)

    Janssen, S.M.J.; Murre, J.M.J.; Meeter, M.

    2008-01-01

    People tend to recall more personal events from adolescence and early adulthood than from other lifetime periods. Most evidence suggests that differential encoding causes this reminiscence bump. However, the question why personal events are encoded better in those periods is still unanswered. To

  7. The reminiscence bump in autobiographical memory and for public events

    DEFF Research Database (Denmark)

    Koppel, Jonathan; Berntsen, Dorthe

    2016-01-01

    of public events. We did so between-subjects, through two cueing methods administered within-subjects, the cue word method and the important memories method. For word-cued memories, we found a similar bump from ages 5 to 19 for both types of memories. However, the bump was more pronounced...... for autobiographical memories. For most important memories, we found a bump from ages 20 to 29 in autobiographical memory, but little discernible age pattern for public events. Rather, specific public events (e.g., the Fall of the Berlin Wall) dominated recall, producing a chronological distribution characterised......The reminiscence bump has been found for both autobiographical memories and memories of public events. However, there have been few comparisons of the bump across each type of event. In the current study, therefore, we compared the bump for autobiographical memories versus the bump for memories...

  8. Rapid thermal processing of nano-crystalline indium tin oxide transparent conductive oxide coatings on glass by flame impingement technology

    International Nuclear Information System (INIS)

    Schoemaker, S.; Willert-Porada, M.

    2009-01-01

    Indium tin oxide (ITO) is still the best suited material for transparent conductive oxides, when high transmission in the visible range, high infrared reflection or high electrical conductivity is needed. Current approaches on powder-based printable ITO coatings aim at minimum consumption of active coating and low processing costs. The paper describes how fast firing by flame impingement is used for effective sintering of ITO-coatings applied on glass. The present study correlates process parameters of fast firing by flame impingement with optoelectronic properties and changes in the microstructure of suspension derived nano-particulate films. With optimum process parameters the heat treated coatings had a sheet resistance below 0.5 kΩ/ □ combined with a transparency higher than 80%. To characterize the influence of the burner type on the process parameters and the coating functionality, two types of methane/oxygen burner were compared: a diffusion burner and a premixed burner

  9. Single bumps in a 2-population homogenized neuronal network model

    Science.gov (United States)

    Kolodina, Karina; Oleynik, Anna; Wyller, John

    2018-05-01

    We investigate existence and stability of single bumps in a homogenized 2-population neural field model, when the firing rate functions are given by the Heaviside function. The model is derived by means of the two-scale convergence technique of Nguetseng in the case of periodic microvariation in the connectivity functions. The connectivity functions are periodically modulated in both the synaptic footprint and in the spatial scale. The bump solutions are constructed by using a pinning function technique for the case where the solutions are independent of the local variable. In the weakly modulated case the generic picture consists of two bumps (one narrow and one broad bump) for each admissible set of threshold values for firing. In addition, a new threshold value regime for existence of bumps is detected. Beyond the weakly modulated regime the number of bumps depends sensitively on the degree of heterogeneity. For the latter case we present a configuration consisting of three coexisting bumps. The linear stability of the bumps is studied by means of the spectral properties of a Fredholm integral operator, block diagonalization of this operator and the Fourier decomposition method. In the weakly modulated regime, one of the bumps is unstable for all relative inhibition times, while the other one is stable for small and moderate values of this parameter. The latter bump becomes unstable as the relative inhibition time exceeds a certain threshold. In the case of the three coexisting bumps detected in the regime of finite degree of heterogeneity, we have at least one stable bump (and maximum two stable bumps) for small and moderate values of the relative inhibition time.

  10. Load Express Analysis of the Car Running Against the Bumps in the Road

    Directory of Open Access Journals (Sweden)

    Yu. N. Baryshnikov

    2014-01-01

    Full Text Available In many fields of technology when calculating the strength there are options available to choose design cases and loads in compliance with different operating conditions. In the automotive industry there are no such standards yet. This is due to both a variety of operating conditions, and a complexity of calculating the actual loads.K. Ert`s article is considered to be a pioneering work in this regard. There the author makes a hypothesis of the linear dependence of torque acting on the car, and of the height of bumps in the road. All formulas were obtained for vehicles with the leaf spring suspensions. An appearing entire class of new cars made it necessary to generalize the experience.This paper proposes an engineering method for calculating the vertical loads acting on the car when bumping in the road. We derive general formulas to calculate the height of the road bumps (irregularities on the way of a running car with various types of suspension. A dump truck BELAZ with various types nonlinear of suspension has been used to test the obtained formulas. The results analysis has shown that under equal conditions a car with dependent rear suspension will bear the lower loads than its prototype with a different type of suspension.The paper presents the relationships between the hights of bumps, which cause an equivalent load when different wheels bump against them. It shows a relation between the loads acting on the car when bumping against the same road irregularity by different wheels. The practical significance of the equations is the possibility to calculate loads in various cases in the road using the one-test results. A comparative results analysis of analytical calculation of loads and numerical experiments is based on the nonlinear model of the vehicle.The proposed method is an effective tool for the rapid analysis of loads in the design and fine-tuning the car.

  11. Thermohydrodynamic analysis of airfoil bearing based on bump foil structure

    Directory of Open Access Journals (Sweden)

    S.Y. Maraiy

    2016-09-01

    Full Text Available The load carrying capacity of the gas foil bearing depends on the material properties and the configuration of the underlying bump strip’s structure. This paper presents three different cases for selecting the dimensions of the foil bearing to guarantee the highest possible load carrying capacity. It focuses on three main parameters that affect the compliance number; these parameters are the length of bump in θ direction, the pitch of bump foil, and the thickness of bump foil. It also studies the effect of changing these parameters on load carrying capacity according to both isothermal and thermohydrodynamic approaches.

  12. The reminiscence bump reconsidered: children's prospective life stories show a bump in young adulthood.

    Science.gov (United States)

    Bohn, Annette; Berntsen, Dorthe

    2011-02-01

    The reminiscence bump-the reporting of more memories from young adulthood than from other stages of life-is considered a hallmark of autobiographical memory research. The most prevalent explanations for this effect assume that events in young adulthood are favored because of the way they are encoded and maintained in long-term memory. Here we show that a similar increase of events in early adulthood is found when children narrate their personal futures. In Study 1, children wrote their future life stories. The events in these life stories were mostly life-script events, and their distribution showed a clear bump in young adulthood. In Study 2, children were prompted by word cues to write down events from their future lives. The events generated consisted mostly of non-life-script events, and those events did not show a bump in young adulthood. Our findings challenge prevailing explanations of the reminiscence bump and suggest that the cultural life script forms an overarching organizational principle for autobiographical memories and future representations across the life span.

  13. ICHEP 2016: to b(ump) or not to b(ump)

    CERN Multimedia

    2016-01-01

    This week I’m in Chicago for the 38th International Conference on High Energy Physics, ICHEP 2016, hosted this year by the US particle physics community. While it became clear at the conference that the famous 750 GeV bump has flatlined, there’s been a wealth of physics from CERN and around the world.   Everyone in their heart felt that the bump would turn out to be no more than a statistical fluctuation, while secretly hoping that it would be something new. Even the designer of the ICHEP 2016 logo cleverly hid a bump with a subtle question mark in the Chicago skyline – appropriately enough in Anish Kapoor’s mysterious ‘Cloud Gate’ sculpture. That question mark has now been resolved. Kapoor’s sculpture returns to being just that, and the search for new physics goes on albeit further constrained as theorists revealed in the 400+ papers in the wake of the bump discussion. The highlight from CERN was undoubtedly the spectacular pe...

  14. Fluxless Bonding Processes Using Silver-Indium System for High Temperature Electronics and Silver Flip-Chip Interconnect Technology

    Science.gov (United States)

    Wu, Yuan-Yun

    In this dissertation, fluxless silver (Ag)-indium (In) binary system bonding and Ag solid-state bonding are used between different bonded pairs which have large thermal expansion coefficient (CTE) mismatch and flip-chip interconnect bonding application. In contrast to the conventional soldering process, fluxless bonding technique eliminates contamination and reliability problems caused by flux to fabricate high quality joints. There are two section are reported. In the first section, the reactions of Ag-In binary system are presented. In the second section, the high melting temperature, thermal and electrical conductivity joint materials bonding by either Ag-In binary system bonding or solid-state bonding processes for different bonded pairs and flip-chip application are designed, developed, and reported. Our group have studied Ag-In system for several years and developed the bonding processes successfully. However, the detailed reactions of Ag and In were seldom studied. To design a proper bonding structure, it is necessary to understand the reaction between Ag and In. The systematic experiments were performed to investigate these reactions. A 40 um Ag layer was electroplated on copper (Cu) substrates, followed by indium layers of 1, 3, 5, 10, and 15 um, respectively. The samples were annealed at 180 °C in 0.1 torr vacuum. For samples with In thickness less than 5 mum, the joint compositions are Ag2In only (1 um) or AgIn2, Ag2In, and Ag solid solution (Ag) after annealing. No indium is identified. For 10 and 15 um thick In samples, In covers almost over the entire sample surface after annealing. Later, an Ag layer was annealed at 450 °C for 3 hours to grow Ag grains, followed by plating 10 um In and annealing at 180 °C. By annealing Ag before plating In, more In is kept in the structure during annealing at 180 °C. Based on above results, for those designs with In thinner than 5 um, the Ag layer needs to be annealed, prior to In plating in order to make a

  15. NSRL Extraction Bump Control in the Booster

    International Nuclear Information System (INIS)

    Brennan, L.

    2008-01-01

    Due to inadequacies in the user interface of the booster orbit control system, a number of new tools were developed. The first priority was an accurate calculation of the winding currents given specific displacements at each extraction septa. Next, the physical limits of the power supplies (±600 amps) needed to be taken into account. In light of this limit, a system is developed that indicates to the user what the allowed values of one bump parameter are once the other two have been specified. Finally, techniques are developed to account for the orbit behavior once power supplies are requested to exceed their ±600 amp limit. This includes a recalculation of bump parameters and a calculation of the amplitude of the residuals. Following this, possible areas for further development are outlined. These techniques were computationally developed in Mathematica and tested in the Methodical Accelerator Design (MAD) program before they were implemented into the control system. At the end, a description of the implementation of these techniques in a new interface is described. This includes a depiction of the appearance and functionality of the graphical user interface, a description of the input and output flow, and an outline of how each important calculation is performed

  16. Dropwise condensation on hydrophobic bumps and dimples

    Science.gov (United States)

    Yao, Yuehan; Aizenberg, Joanna; Park, Kyoo-Chul

    2018-04-01

    Surface topography plays an important role in promoting or suppressing localized condensation. In this work, we study the growth of water droplets on hydrophobic convex surface textures such as bumps and concave surface textures such as dimples with a millimeter scale radius of curvature. We analyze the spatio-temporal droplet size distribution under a supersaturation condition created by keeping the uniform surface temperature below the dew point and show its relationship with the sign and magnitude of the surface curvature. In particular, in contrast to the well-known capillary condensation effect, we report an unexpectedly less favorable condensation on smaller, millimeter-scale dimples where the capillary condensation effect is negligible. To explain these experimental results, we numerically calculated the diffusion flux of water vapor around the surface textures, showing that its magnitude is higher on bumps and lower on dimples compared to a flat surface. We envision that our understanding of millimetric surface topography can be applied to improve the energy efficiency of condensation in applications such as water harvesting, heating, ventilation, and air conditioning systems for buildings and transportation, heat exchangers, thermal desalination plants, and fuel processing systems.

  17. Cascading reminiscence bumps in popular music.

    Science.gov (United States)

    Krumhansl, Carol Lynne; Zupnick, Justin Adam

    2013-10-01

    Autobiographical memories are disproportionately recalled for events in late adolescence and early adulthood, a phenomenon called the reminiscence bump. Previous studies on music have found autobiographical memories and life-long preferences for music from this period. In the present study, we probed young adults' personal memories associated with top hits over 5-and-a-half decades, as well as the context of their memories and their recognition of, preference for, quality judgments of, and emotional reactions to that music. All these measures showed the typical increase for music released during the two decades of their lives. Unexpectedly, we found that the same measures peaked for the music of participants' parents' generation. This finding points to the impact of music in childhood and suggests that these results reflect the prevalence of music in the home environment. An earlier peak occurred for 1960s music, which may be explained by its quality or by its transmission through two generations. We refer to this pattern of musical cultural transmission over generations as cascading reminiscence bumps.

  18. Tank Bump Accident Potential and Consequences During Waste Retrieval

    International Nuclear Information System (INIS)

    BRATZEL, D.R.

    2000-01-01

    This report provides an evaluation of Hanford tank bump accident potential and consequences during waste retrieval operations. The purpose of this report is to consider the best available new information to support recommendations for safety controls. A new tank bump accident analysis for safe storage (Epstein et al. 2000) is extended for this purpose. A tank bump is a postulated event in which gases, consisting mostly of water vapor, are suddenly emitted from the waste and cause tank headspace pressurization. Tank bump scenarios, physical models, and frequency and consequence methods are fully described in Epstein et al. (2000). The analysis scope is waste retrieval from double-shell tanks (DSTs) including operation of equipment such as mixer pumps and air lift circulators. The analysis considers physical mechanisms for tank bump to formulate criteria for bump potential during retrieval, application of the criteria to the DSTs, evaluation of bump frequency, and consequence analysis of a bump. The result of the consequence analysis is the mass of waste released from tanks; radiological dose is calculated using standard methods (Cowley et al. 2000)

  19. The Physics of Bump Drafting in Car Racing

    Science.gov (United States)

    Fiolhais, Miguel C. N.; Amor dos Santos, Susana

    2014-01-01

    The technique of bump drafting, also known as two-car drafting in motorsports, is analysed in the framework of Newtonian mechanics and simple aerodynamic drag forces. As an apparent unnatural effect that often pleases the enthusiasts of car racing, bump drafting provides a unique pedagogical opportunity for students to gain insights into the…

  20. Decomposing the sales promotion bump with store data

    NARCIS (Netherlands)

    van Heerde, H.J.; Leeflang, P.S.H.; Wittink, D.R.

    2004-01-01

    Sales promotions generate substantial short-term sales increases. To determine whether the sales promotion bump is truly beneficial from a managerial perspective, we propose a system of store-level regression models that decomposes the sales promotion bump into three parts: cross-brand effects

  1. The Availability of Indium: The Present, Medium Term, and Long Term

    Energy Technology Data Exchange (ETDEWEB)

    Lokanc, Martin [Colorado School of Mines, Golden, CO (United States); Eggert, Roderick [Colorado School of Mines, Golden, CO (United States); Redlinger, Michael [Colorado School of Mines, Golden, CO (United States)

    2015-10-01

    Demand for indium is likely to increase if the growth in deployment of the copper-indium-gallium-selenide (CIGS) and III-V thin-film photovoltaic technologies accelerates. There are concerns about indium supply constraints since it is relatively rare element in the earth's crust and because it is produced exclusively as a byproduct.

  2. Numerical Analysis of Warpage Induced by Thermo-Compression Bonding Process of Cu Pillar Bump Flip Chip Package

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Oh Young; Jung, Hoon Sun; Lee, Jung Hoon; Choa, Sung-Hoon [Seoul Nat’l Univ. of Science and Technology, Seoul (Korea, Republic of)

    2017-06-15

    In flip chip technology, the conventional solder bump has been replaced with a copper (Cu) pillar bump owing to its higher input/output (I/O) density, finer pitch, and higher reliability. However, Cu pillar bump technology faces several issues, such as interconnect shorting and higher low-k stress due to stiffer Cu pillar structure when the conventional reflow process is used. Therefore, the thermal compression bonding (TCB) process has been adopted in the flip chip attachment process in order to reduce the package warpage and stress. In this study, we investigated the package warpage induced during the TCB process using a numerical analysis. The warpage of the TCB process was compared with that of the reflow process.

  3. Electrical characteristics for Sn-Ag-Cu solder bump with Ti/Ni/Cu under-bump metallization after temperature cycling tests

    Science.gov (United States)

    Shih, T. I.; Lin, Y. C.; Duh, J. G.; Hsu, Tom

    2006-10-01

    Lead-free solder bumps have been widely used in current flip-chip technology (FCT) due to environmental issues. Solder joints after temperature cycling tests were employed to investigate the interfacial reaction between the Ti/Ni/Cu under-bump metallization and Sn-Ag-Cu solders. The interfacial morphology and quantitative analysis of the intermetallic compounds (IMCs) were obtained by electron probe microanalysis (EPMA) and field emission electron probe microanalysis (FE-EPMA). Various types of IMCs such as (Cu1-x,Agx)6Sn5, (Cu1-y,Agy)3Sn, and (Ag1-z,Cuz)3Sn were observed. In addition to conventional I-V measurements by a special sample preparation technique, a scanning electron microscope (SEM) internal probing system was introduced to evaluate the electrical characteristics in the IMCs after various test conditions. The electrical data would be correlated to microstructural evolution due to the interfacial reaction between the solder and under-bump metallurgy (UBM). This study demonstrated the successful employment of an internal nanoprobing approach, which would help further understanding of the electrical behavior within an IMC layer in the solder/UBM assembly.

  4. Visual Analysis of Speeding Bumps Using Floating Car Dataset

    DEFF Research Database (Denmark)

    Kveladze, Irma; Agerholm, Niels

    2018-01-01

    measures, and also their influence on the driving behaviour of vehicles from a temporal perspective. To fill this gap and understand these aspects, in this research we propose visual analytics techniques. To explore the influence of the bumps on speed change behavior of vehicles, several use case studies...... in three different cities were selected with close cooperation of a traffic domain expert. The aim was first to study influence of the bumps on vehicle volume and speeding from a time perspective. And then, establish any connection between speed bump intervals and vehicle speeding in the selected use cases...

  5. Light and velocity curve bumps for BW Vulpeculae

    International Nuclear Information System (INIS)

    Pesnell, W.D.; Cox, A.N.

    1980-01-01

    Bumps in the light and radial velocity curves of the Beta Cephei star BW Vulpeculae were modeled. Two mechanisms, a resonance phenomena and non-linear pulsations, were investigated. The resonance condition was clearly not fulfilled, the calculated period ratio being approximately 0.60, where a value of 0.50 L +- 0.03 is required for resonance. In the non-linear calculation, the bump appears, with the correct phase, but was found at an amplitude that is too large. Further, the light curve does not show any bump-like feature. The cause of the bump is the large spurious boost given the star's velocity field by the solution methods. The calculated periods of the stellar models are shorter than those of previous calculations, enhancing the possibility that these stars pulsate in a radial fundamental mode

  6. Plastic deformation of indium nanostructures

    International Nuclear Information System (INIS)

    Lee, Gyuhyon; Kim, Ju-Young; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

    2011-01-01

    Highlights: → Indium nanopillars display two different deformation mechanisms. → ∼80% exhibited low flow stresses near that of bulk indium. → Low strength nanopillars have strain rate sensitivity similar to bulk indium. → ∼20% of compressed indium nanopillars deformed at nearly theoretical strengths. → Low-strength samples do not exhibit strength size effects. - Abstract: Mechanical properties and morphology of cylindrical indium nanopillars, fabricated by electron beam lithography and electroplating, are characterized in uniaxial compression. Time-dependent deformation and influence of size on nanoscale indium mechanical properties were investigated. The results show two fundamentally different deformation mechanisms which govern plasticity in these indium nanostructures. We observed that the majority of indium nanopillars deform at engineering stresses near the bulk values (Type I), with a small fraction sustaining flow stresses approaching the theoretical limit for indium (Type II). The results also show the strain rate sensitivity and flow stresses in Type I indium nanopillars are similar to bulk indium with no apparent size effects.

  7. Looking Down Under for a Circular Economy of Indium.

    Science.gov (United States)

    Werner, Tim T; Ciacci, Luca; Mudd, Gavin Mark; Reck, Barbara K; Northey, Stephen Alan

    2018-02-20

    Indium is a specialty metal crucial for modern technology, yet it is potentially critical due to its byproduct status in mining. Measures to reduce its criticality typically focus on improving its recycling efficiency at end-of-life. This study quantifies primary and secondary indium resources ("stocks") for Australia through a dynamic material-flow analysis. It is based on detailed assessments of indium mineral resources hosted in lead-zinc and copper deposits, respective mining activities from 1844 to 2013, and the trade of indium-containing products from 1988 to 2015. The results show that Australia's indium stocks are substantial, estimated at 46.2 kt in mineral resources and an additional 14.7 kt in mine wastes. Australian mineral resources alone could meet global demand (∼0.8 kt/year) for more than five decades. Discarded material from post-consumer products, instead, is negligible (43 t). This suggests that the resilience of Australia's indium supply can best be increased through efficiency gains in mining (such as introducing domestic indium refining capacity) rather than at the end of the product life. These findings likely also apply to other specialty metals, such as gallium or germanium, and other resource-dominated countries. Finally, the results illustrate that national circular economy strategies can differ substantially.

  8. New Pulsed Orbit Bump Magnets for the Fermilab Booster Synchrotron

    CERN Document Server

    Lackey, James; John, Carson; Kashikhin, Vladimir; Makarov, Alexander; Prebys, Eric

    2005-01-01

    The beam from the Fermilab Linac is injected onto a bump in the closed orbit of the Booster Synchrotron where a carbon foil strips the electrons from the Linac’s negative ion hydrogen beam. Although the Booster itself runs at 15Hz, heat dissipation in the orbit bump magnets has been one limitation to the fraction of the cycles that can be used for beam. New, 0.28T pulsed window frame dipole magnets have been constructed that will fit into the same space as the old ones, run at the full repetition rate of the Booster, and provide a larger bump to allow a cleaner injection orbit. The new magnets use a high saturation flux density Ni-Zn ferrite in the yoke rather than laminated steel. The presented magnetic design includes two and three dimensional magnetic field calculations with eddy currents and ferrite nonlinear effects.

  9. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    Science.gov (United States)

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  10. Hanford Waste Tank Bump Accident and Consequence Analysis

    International Nuclear Information System (INIS)

    BRATZEL, D.R.

    2000-01-01

    This report provides a new evaluation of the Hanford tank bump accident analysis and consequences for incorporation into the Authorization Basis. The analysis scope is for the safe storage of waste in its current configuration in single-shell and double-shell tanks

  11. Do You Hear a Bump or a Hole?

    DEFF Research Database (Denmark)

    Serafin, Stefania; Turchet, Luca; Nordahl, Rolf

    2010-01-01

    In this paper, we present a preliminary experiment whose goal is to assess the role of temporal aspects in sonically simulating the act of walking on a bump or a hole. In particular, we investigate whether the timing between heel and toe and the timing between footsteps affects the perception...

  12. Pressure bump instability in very large cold bore storage rings

    International Nuclear Information System (INIS)

    Limon, P.

    1983-12-01

    Calculations have been done to estimate the circulating current necessary to induce the onset of a pressure bump instability in a cold bore storage ring. For a wide range of storage ring parameters, the instability threshold current is more than an order of magnitude higher than the operating current. 4 references, 2 tables

  13. Reading in Middle School: Bumps in the Literacy Crossroads

    Science.gov (United States)

    Hall, Katrina Willard

    2008-01-01

    Certainly a major bump in the literacy road today is the apparent conflict between school literacies and the preferred literacy activities of students outside of school. After family conversation about a nephew who was getting poor grades in language arts, Hall shares her thinking on the dilemmas of what constitutes literacy, how literacies kids…

  14. Indium and thallium

    International Nuclear Information System (INIS)

    1976-01-01

    The physical and the chemical properties and methods for producing indium and its main compounds have been studied. Presented are the major fields of application of the metal, inclusive of the atomic and space engineering. Described are the natural occurrence and the types of deposits of this disseminated element. Given are the main methods for extracting In from various raw materials, the methods being also evaluated economically. It is inferred, that all the conditions being equal, the extraction technique yields In at a lesser cost, a higher recovery and higher labour productivity. Described are methods for manufacturing the frequently used In compounds, such as the antimonide, arsenide, phosphide

  15. Anelasticity of polycrystalline indium

    Energy Technology Data Exchange (ETDEWEB)

    Sapozhnikov, K., E-mail: k.sapozhnikov@mail.ioffe.ru [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Golyandin, S. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Kustov, S. [Dept. de Fisica, Universitat de les Illes Balears, Cra Valldemossa km 7.5, E 07122 Palma de Mallorca (Spain)

    2009-09-15

    Mechanisms of anelasticity of polycrystalline indium have been studied over wide ranges of temperature (7-320 K) and strain amplitude (2 x 10{sup -7}-3.5 x 10{sup -4}). Measurements of the internal friction and Young's modulus have been performed by means of the piezoelectric resonant composite oscillator technique using longitudinal oscillations at frequencies of about 100 kHz. The stages of the strain amplitude dependence of the internal friction and Young's modulus defect, which can be attributed to dislocation - point defect and dislocation - dislocation interactions, have been revealed. It has been shown that thermal cycling gives rise to microplastic straining of polycrystalline indium due to the anisotropy of thermal expansion and to appearance of a 'recrystallization' internal friction maximum in the temperature spectra of amplitude-dependent anelasticity. The temperature range characterized by formation of Cottrell's atmospheres of point defects around dislocations has been determined from the acoustic data.

  16. Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

    Science.gov (United States)

    Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

    2018-02-26

    Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

  17. Structural integrity of power generating speed bumps made of concrete foam composite

    Science.gov (United States)

    Syam, B.; Muttaqin, M.; Hastrino, D.; Sebayang, A.; Basuki, W. S.; Sabri, M.; Abda, S.

    2018-02-01

    In this paper concrete foam composite speed bumps were designed to generate electrical power by utilizing the movements of commuting vehicles on highways, streets, parking gates, and drive-thru station of fast food restaurants. The speed bumps were subjected to loadings generated by vehicles pass over the power generating mechanical system. In this paper, we mainly focus our discussion on the structural integrity of the speed bumps and discuss the electrical power generating speed bumps in another paper. One aspect of structural integrity is its ability to support designed loads without breaking and includes the study of past structural failures in order to prevent failures in future designs. The concrete foam composites were used for the speed bumps; the reinforcement materials are selected from empty fruit bunch of oil palm. In this study, the speed bump materials and structure were subjected to various tests to obtain its physical and mechanical properties. To analyze the structure stability of the speed bumps some models were produced and tested in our speed bump test station. We also conduct a FEM-based computer simulation to analyze stress responses of the speed bump structures. It was found that speed bump type 1 significantly reduced the radial voltage. In addition, the speed bump is equipped with a steel casing is also suitable for use as a component component in generating electrical energy.

  18. Bump formation in a binary attractor neural network

    International Nuclear Information System (INIS)

    Koroutchev, Kostadin; Korutcheva, Elka

    2006-01-01

    The conditions for the formation of local bumps in the activity of binary attractor neural networks with spatially dependent connectivity are investigated. We show that these formations are observed when asymmetry between the activity during the retrieval and learning is imposed. An analytical approximation for the order parameters is derived. The corresponding phase diagram shows a relatively large and stable region where this effect is observed, although critical storage and information capacities drastically decrease inside that region. We demonstrate that the stability of the network, when starting from the bump formation, is larger than the stability when starting even from the whole pattern. Finally, we show a very good agreement between the analytical results and the simulations performed for different topologies of the network

  19. Life story chapters, specific memories and the reminiscence bump

    DEFF Research Database (Denmark)

    Thomsen, Dorthe Kirkegaard; Pillemer, David B.; Ivcevic, Zorana

    2011-01-01

    Theories of autobiographical memory posit that extended time periods (here termed chapters) and memories are organised hierarchically. If chapters organise memories and guide their recall, then chapters and memories should show similar temporal distributions over the life course. Previous research...... are over-represented at the beginning of chapters. Potential connections between chapters and the cultural life script are also examined. Adult participants first divided their life story into chapters and identified their most positive and most negative chapter. They then recalled a specific memory from...... demonstrates that positive but not negative memories show a reminiscence bump and that memories cluster at the beginning of extended time periods. The current study tested the hypotheses that (1) ages marking the beginning of positive but not negative chapters produce a bump, and that (2) specific memories...

  20. The first bump-bonded pixel detectors on CVD diamond

    International Nuclear Information System (INIS)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V.G.; Pan, L.S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G.

    1999-01-01

    Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch

  1. The first bump-bonded pixel detectors on CVD diamond

    CERN Document Server

    Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Fried, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Palmieri, V G; Pan, L S; Peitz, A; Pernicka, Manfred; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Steuerer, J; Stone, R; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Turchetta, R; Vittone, E; Wagner, A; Walsh, A M; Wedenig, R; Weilhammer, Peter; Zeuner, W; Ziock, H J; Zöller, M; Charles, E; Ciocio, A; Dao, K; Einsweiler, Kevin F; Fasching, D; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Milgrome, O; Palaio, N; Richardson, J; Sinervo, P K; Zizka, G

    1999-01-01

    Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98565544f the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 mu m was observed, consistent with expectations given the detector pitch. (13 refs).

  2. The first bump-bonded pixel detectors on CVD diamond

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V.G.; Pan, L.S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W. E-mail: william@physics.utoronto.ca; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G

    1999-11-01

    Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 {mu}m was observed, consistent with expectations given the detector pitch.

  3. The AGB bump: a calibrator for core mixing

    Directory of Open Access Journals (Sweden)

    Bossini Diego

    2015-01-01

    Full Text Available The efficiency of convection in stars affects many aspects of their evolution and remains one of the key-open questions in stellar modelling. In particular, the size of the mixed core in core-He-burning low-mass stars is still uncertain and impacts the lifetime of this evolutionary phase and, e.g., the C/O profile in white dwarfs. One of the known observables related to the Horizontal Branch (HB and Asymptotic Giant Branch (AGB evolution is the AGB bump. Its luminosity depends on the position in mass of the helium-burning shell at its first ignition, that is affected by the extension of the central mixed region. In this preliminary work we show how various assumptions on near-core mixing and on the thermal stratification in the overshooting region affect the luminosity of the AGB bump, as well as the period spacing of gravity modes in core-He-burning models.

  4. TRACKING TESTS FOR THE SNS FAST INJECTION BUMP POWER SUPPLY

    International Nuclear Information System (INIS)

    ENG, W.; CUTLER, R.; DEWAN, S.

    2004-01-01

    The tracking requirement of the SNS Fast Injection Bump power supplies is described. In addition to the usual tracking between the load current and the input reference of a power supply, these power supplies must also track between pairs of units under slightly different loads. This paper describes the use of a current-null test to measure tracking performances. For the actual tests, a single dummy magnet load was used to measure the tracking between the first two production units at the manufacturer's facility. Using the Yokogawa WE7000 waveform. PC-based measurement instrument, input and output waveforms are digitized and stored in data files. A program written for this application is then used to extract data from these files to construct, analyze the waveforms and characterize the power supply performance. Results of the measurements of two SNS Fast Injection Bump power supplies will be presented in this paper

  5. Vacancy-indium clusters in implanted germanium

    KAUST Repository

    Chroneos, Alexander I.

    2010-04-01

    Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

  6. Vacancy-indium clusters in implanted germanium

    KAUST Repository

    Chroneos, Alexander I.; Kube, R.; Bracht, Hartmut A.; Grimes, Robin W.; Schwingenschlö gl, Udo

    2010-01-01

    Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

  7. Speed Bump Detection Using Accelerometric Features: A Genetic Algorithm Approach.

    Science.gov (United States)

    Celaya-Padilla, Jose M; Galván-Tejada, Carlos E; López-Monteagudo, F E; Alonso-González, O; Moreno-Báez, Arturo; Martínez-Torteya, Antonio; Galván-Tejada, Jorge I; Arceo-Olague, Jose G; Luna-García, Huizilopoztli; Gamboa-Rosales, Hamurabi

    2018-02-03

    Among the current challenges of the Smart City, traffic management and maintenance are of utmost importance. Road surface monitoring is currently performed by humans, but the road surface condition is one of the main indicators of road quality, and it may drastically affect fuel consumption and the safety of both drivers and pedestrians. Abnormalities in the road, such as manholes and potholes, can cause accidents when not identified by the drivers. Furthermore, human-induced abnormalities, such as speed bumps, could also cause accidents. In addition, while said obstacles ought to be signalized according to specific road regulation, they are not always correctly labeled. Therefore, we developed a novel method for the detection of road abnormalities (i.e., speed bumps). This method makes use of a gyro, an accelerometer, and a GPS sensor mounted in a car. After having the vehicle cruise through several streets, data is retrieved from the sensors. Then, using a cross-validation strategy, a genetic algorithm is used to find a logistic model that accurately detects road abnormalities. The proposed model had an accuracy of 0.9714 in a blind evaluation, with a false positive rate smaller than 0.018, and an area under the receiver operating characteristic curve of 0.9784. This methodology has the potential to detect speed bumps in quasi real-time conditions, and can be used to construct a real-time surface monitoring system.

  8. Injection Bump Synchronization Study for the CERN PS

    CERN Document Server

    Serluca, Maurizio; Gilardoni, Simone; CERN. Geneva. ATS Department

    2016-01-01

    In the framework of the LHC Injector Upgrade (LIU) project the CERN PS injection kinetic energy will be upgraded from 1.4 to 2 GeV. The present injection bump is made by four bumpers in Straight Section (SS) 40, 42, 43, 44 and it will be converted in a five bumpers system to allow additional flexibility in the bump shape with a reduction of the proton losses during the bump closure. The injection section SS42 has being redesigned to accommodate a new eddy current septum which will host a new bumper magnet in the same vacuum vessel due to reduced longitudinal space availability. The synchronization and amplitude variation of the power converter of the in-vacuum bumper 42 with respect to the remaining outside vacuum bumpers 40, 41, 43, 44 can lead to orbit distortion and consequent losses during injection. In this note we present the experimental results from Machine Development (MD) studies along with simulations for the present system at 1.4 GeV to quantify the acceptable orbit distortion and the performance ...

  9. Speed Bump Detection Using Accelerometric Features: A Genetic Algorithm Approach

    Directory of Open Access Journals (Sweden)

    Jose M. Celaya-Padilla

    2018-02-01

    Full Text Available Among the current challenges of the Smart City, traffic management and maintenance are of utmost importance. Road surface monitoring is currently performed by humans, but the road surface condition is one of the main indicators of road quality, and it may drastically affect fuel consumption and the safety of both drivers and pedestrians. Abnormalities in the road, such as manholes and potholes, can cause accidents when not identified by the drivers. Furthermore, human-induced abnormalities, such as speed bumps, could also cause accidents. In addition, while said obstacles ought to be signalized according to specific road regulation, they are not always correctly labeled. Therefore, we developed a novel method for the detection of road abnormalities (i.e., speed bumps. This method makes use of a gyro, an accelerometer, and a GPS sensor mounted in a car. After having the vehicle cruise through several streets, data is retrieved from the sensors. Then, using a cross-validation strategy, a genetic algorithm is used to find a logistic model that accurately detects road abnormalities. The proposed model had an accuracy of 0.9714 in a blind evaluation, with a false positive rate smaller than 0.018, and an area under the receiver operating characteristic curve of 0.9784. This methodology has the potential to detect speed bumps in quasi real-time conditions, and can be used to construct a real-time surface monitoring system.

  10. Indium recovery by solvent extraction

    International Nuclear Information System (INIS)

    Fortes, Marilia Camargos Botelho

    1999-04-01

    Indium has been recovered as a byproduct from residues generated from the sulfuric acid leaching circuits in mineral plants for zinc recovery. Once its recovery comes from the slags of other metals recovery, it is necessary to separate it from the other elements which usually are present in high concentrations. Many works have been approaching this separation and indicate the solvent extraction process as the main technique used. In Brazilian case, indium recovery depends on the knowledge of this technique and its development. This paper describes the solvent extraction knowledge for the indium recovery from aqueous solutions generated in mineral plants. The results for determination of the best experimental conditions to obtain a high indium concentration solution and minimum iron poisoning by solvent extraction with di (2-ethylhexyl)-phosphoric acid (D2EHPA) solubilized in isoparafin and exxsol has been presented. (author)

  11. The peaks of life: The differential temporal locations of the reminiscence bump across disparate cueing methods

    DEFF Research Database (Denmark)

    Koppel, Jonathan Mark; Berntsen, Dorthe

    2015-01-01

    The reminiscence bump has generally been assessed through either (1) the cue word method, or (2) several related methods which we refer to under the umbrella of the important memories method. Here we provide a review of the literature demonstrating that the temporal location of the bump varies...... systematically according to cueing method, with the mean range of the bump located from 8.7 to 22.5 years of age for word-cued memories, versus 15.1 to 27.9 for important memories. This finding has hitherto been under-acknowledged, as existing theoretical accounts of the bump generally hold its location...... to be stable across cueing methods. We therefore re-evaluate existing theoretical accounts of the bump in light of these varying locations, addressing each account’s consistency with (1) the respective bumps found through each method taken individually, and (2) the sensitivity of the bump’s location to cueing...

  12. The Effects of Campus Bump on Drivers’ Fixation Dispersion and Speed Reduction

    Directory of Open Access Journals (Sweden)

    Qian Xu

    2015-01-01

    Full Text Available To evaluate the effects of campus speed bumps on drivers’ speed and fixation distribution, a quasinaturalistic driving test was conducted on a Chinese campus. Seven randomly selected drivers, wearing the Dikablis eye tracking devices, were required to drive an OPEL SUV passing the speed bumps. The area close to the bump was divided into ten subsegments (15 m for each one. The degree of fixation dispersion within each subsegment was defined as the distance from each subcenter to the whole fixation center. All traffic data were recorded using mounted camera, and the trajectories were extracted in Matlab. The speed and trajectory data was divided into two groups: the before group for bump-free case and the after group for a 5 cm bump case. The observational before-after analysis shows statistical significance between the two cases. The individual vehicular speed analysis reveals that bump reduces nearly 60% of vehicles’ speeds to a certain extent within the distance from 30 m upstream to 15 m downstream. The drivers’ fixation points begin to disperse 30–45 m before they see the bump, and it falls back to normal level 15–30 m downstream of the bump. These findings will help engineers install speed bumps at the most appropriate locations.

  13. Effectiveness of Emittance Bumps in the NLC and US Cold LC Main Linear Accelerators (LCC-0138)

    International Nuclear Information System (INIS)

    Tenenbaum, P

    2004-01-01

    We report on a series of studies on the effectiveness of closed orbit bumps in the linacs of the NLC and the USColdLC. In the first study, emittance dilutions of a pure-wakefield or pure-dispersion character are introduced in each linac, and a set of emittance bumps is tested to determine the most effective bump location in the linac, and the net effectiveness. In the second study, a more realistic set of dilutions are introduced and the wakefield bumps used in the first study are applied

  14. Aqueous-based thick photoresist removal for bumping applications

    Science.gov (United States)

    Moore, John C.; Brewer, Alex J.; Law, Alman; Pettit, Jared M.

    2015-03-01

    Cleaning processes account for over 25% of processing in microelectronic manufacturing [1], suggesting electronics to be one of the most chemical intensive markets in commerce. Industry roadmaps exist to reduce chemical exposure, usage, and waste [2]. Companies are encouraged to create a safer working environment, or green factory, and ultimately become certified similar to LEED in the building industry [3]. A significant step in this direction is the integration of aqueous-based photoresist (PR) strippers which eliminate regulatory risks and cut costs by over 50%. One of the largest organic solvent usages is based upon thick PR removal during bumping processes [4-6]. Using market projections and the benefits of recycling, it is estimated that over 1,000 metric tons (mt) of residuals originating from bumping processes are incinerated or sent to a landfill. Aqueous-based stripping would eliminate this disposal while also reducing the daily risks to workers and added permitting costs. Positive-tone PR dissolves in aqueous strippers while negative-tone systems are lifted-off from the substrate, bumps, pillars, and redistribution layers (RDL). While the wafers are further processed and rinsed, the lifted-off PR is pumped from the tank, collected onto a filter, and periodically back-flushed to the trash. The PR solids become a non-hazardous plastic waste while the liquids are mixed with the developer stream, neutralized, filtered, and in most cases, disposed to the sewer. Regardless of PR thickness, removal processes may be tuned to perform in <15min, performing at rates nearly 10X faster than solvents with higher bath lives. A balanced formula is safe for metals, dielectrics, and may be customized to any fab.

  15. Indium solar neutrino experiment using superconducting grains

    International Nuclear Information System (INIS)

    Bellefon, A. de; Espigat, P.

    1984-08-01

    In this paper we would like to emphasize the revival of interest for Indium experiment in Europe. Properties of metastable superconducting indium grains are presented and our progress towards making an experiment feasible is reviewed

  16. Secondary indium production from end-of-life liquid crystal displays

    Energy Technology Data Exchange (ETDEWEB)

    Amato, Alessia; Rocchetti, Laura; Fonti, Viviana; Ruello, Maria Letizia; Beolchini, Francesca [Universita Politecnica of Marche, DISVA, Via Brecce Bianche, 60131 Ancona (Italy)

    2016-12-15

    In 2014, the European Union identified 20 raw materials critical for economic importance and high supply risk. Indium, used in several innovative technologies, is among such critical raw materials. Generally, it is mined as a by-product of zinc from a mineral named sphalerite, with a concentration between 1 and 100 ppm. Currently, the largest producer of indium is China and about 84% of the worldwide indium consumption is used for liquid crystal display (LCD) production, in particular to form an indium-tin-oxide (ITO) film with transparent conductor properties. The fast evolution of LCD technologies caused a double effect: the growth of indium demand and an increase of waste electrical and electronic equipment (WEEE). Considering these two factors, the aim of this study is to make the end-of-life LCDs a secondary indium resource. With this purpose, an indium recovery process was developed carrying out an acidic leaching, followed by a zinc cementation. The first step allowed a complete indium extraction using 2M sulfuric acid at 80 C for 10 min. The problem of low indium concentration in the scraps (around 150 ppm) was overcome using a cross-current configuration in the leaching phase that allowed an increase of metal concentration and a decrease of reagents consumption. An indium recovery higher than 90% was obtained in the final cementation step, using 5 g/L of zinc powder at pH 3 and 55 C for 10 min. Considering its high efficiency, this process is promising in a context of circular economy, where a waste becomes a resource. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Revised masses for the double-mode and bump Cepheids

    International Nuclear Information System (INIS)

    Cox, A.N.; Deupree, R.G.; King, D.S.; Hodson, S.W.

    1977-01-01

    We consider Population I Cepheids with two pulsation modes and those with a bump in the light and velocity curves. Model envelopes for these Cepheids have been altered in several ways in an attempt in remove the discrepancy between masses predicted from the evolution theory mass-luminosity relation an th masses predicted from pulsation theory. One of these ways, the inclusion of rotation, does not change the period ratio of the first overtone mode to the fundamental mode enough to resolve this mass discrepancy. Another way, the inclusion of a helium- (or metal-) rich layer mixed by convection and pulsation between the stellar surface and 70,000 K decreases this period ratio appreciably. The ratio of the second overtone period to the fundamental period is also reduced with this structure. The masses of the double-mode Cepheids U TrA and V367 Sct and the bump Cepheids U Sgr and β Dor are found to be much closer to the masses derived from stellar evolution theory

  18. Electronic and chemical properties of indium clusters

    International Nuclear Information System (INIS)

    Rayane, D.; Khardi, S.; Tribollet, B.; Broyer, M.; Melinon, P.; Cabaud, B.; Hoareau, A.

    1989-01-01

    Indium clusters are produced by the inert gas condensation technique. The ionization potentials are found higher for small clusters than for the Indium atom. This is explained by the p character of the bonding as in aluminium. Doubly charge clusters are also observed and fragmentation processes discussed. Finally small Indium clusters 3< n<9 are found very reactive with hydrocarbon. (orig.)

  19. A review of the world market of indium (Economy of indium)

    International Nuclear Information System (INIS)

    Naumov, A.V.

    2005-01-01

    A review of the current state of the world and Russian markets of indium and indium-containing products was made based on the publications of the last years. Main fields of indium application are given, in particular, its using for neutron absorbing regulating rods in nuclear reactors. The second γ-radiation resulted from neutron absorption allows using indium as a neutron detector. Indium market stabilization is expected due to supply from China and South Korea [ru

  20. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    Science.gov (United States)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  1. On the persistence of unstable bump-on-tail electron velocity distributions in the earth's foreshock

    International Nuclear Information System (INIS)

    Klimas, A.J.; Fitzenreiter, R.J.

    1988-01-01

    Further evidence for the persistence of bump-on-tail unstable reduced velocity distribution in the Earth's electron foreshock is presented. This persistence contradicts our understanding of quasi-linear saturation of the bump-on-tail instability; the distributions should be stabilized through velocity space diffusion too quickly to allow an observation of their unstable form. A modified theory for the saturation of the bump-on-tail instability in the Earth's foreshock is proposed and examined using numerical simulation and quasi-linear theoretical techniques. It is argued the mechanism due to Filbert and Kellogg and to Cairns which is responsible for the creation of the bump-on-tail velocity distribution in the foreshock is still operative during the evolution of the bump-on-tail instability. The saturated state of the plasma must represent a balance between this creation mechanism and velocity space diffusion; the saturated state is not determined by velocity space diffusion alone. Thus the velocity distribution of the saturated stat may still appear bump-on-tail unstable to standard linear analysis which does not take the creation mechanism into account. The bump-on-tail velocity distributions in the foreshock would then represent the state of the plasma after saturation of the bump-on-tail instability, not before

  2. Two-Dimensional Bumps in Piecewise Smooth Neural Fields with Synaptic Depression

    KAUST Repository

    Bressloff, Paul C.; Kilpatrick, Zachary P.

    2011-01-01

    instability leads to the formation of a traveling spot. The local stability of a bump is determined by solutions to a system of pseudolinear equations that take into account the sign of perturbations around the circular bump boundary. © 2011 Society

  3. Stability of bumps in piecewise smooth neural fields with nonlinear adaptation

    KAUST Repository

    Kilpatrick, Zachary P.; Bressloff, Paul C.

    2010-01-01

    associated with a bump solution means that bump stability cannot be analyzed by constructing the Evans function for a network with a sigmoidal gain function and then taking the high-gain limit. In the case of synaptic depression, we show that linear stability

  4. Shrinking of bumps by drawing scintillating fibres through a hot conical tool

    CERN Document Server

    Rodrigues Cavalcante, Ana Barbara; Gavardi, Laura; Joram, Christian; Kristic, Robert; Pierschel, Gerhard; Schneider, Thomas

    2016-01-01

    The LHCb SciFi tracker will be based on scintillating fibres with a nominal diameter of 250 $\\mu$m. A small length fraction of these fibres shows millimetre-scale fluctuations of the diameter, also known as bumps and necks. In particular, bumps exceeding a diameter of about 350 $\\mu$m are problematic as they can distort the winding pattern of the fibre mats over more extended regions. We present a method to reduce the diameter of large bumps to a diameter of 350 $\\mu$m by locally heating and pulling the fibre through a conical tool. The method has been proven to work for bumps up to 450 – 500 $\\mu$m diameter. Larger bumps need to be treated manually by a cut-and-glue technique which relies on UV-curing instant glue. The bump shrinking and cut-and-glue processes were integrated in a fibre diameter scanner at CERN. The central scanning and bump shrinking of all fibres is expected to minimise bump related issues at the four mat winding centres of the SciFi project.

  5. On the persistence of unstable bump-on-tail electron velocity distributions in the earth's foreshock

    Science.gov (United States)

    Klimas, Alexander J.; Fitzenreiter, Richard J.

    1988-01-01

    This paper presents further evidence for the persistence of bump-on-tail unstable reduced velocity distributions in the earth's electron foreshock, which contradicts the understanding of quasi-linear saturation of the bump-on-tail instability. A modified theory for the saturation of the bump-on-tail instability in the earth's foreshock is proposed to explain the mechanism of this persistence, and the predictions are compared to the results of a numerical simulation of the electron plasma in the foreshock. The results support the thesis that quasi-linear saturation of the bump-on-tail instability is modified in the foreshock, due to the driven nature of the region, so that at saturation the stabilized velocity distribution still appears bump-on-tail unstable to linear plasma analysis.

  6. Preparation of High-purity Indium Oxalate Salt from Indium Scrap by Organic Acids

    International Nuclear Information System (INIS)

    Koo, Su-Jin; Ju, Chang-Sik

    2013-01-01

    Effect of organic acid on the preparation of indium-oxalate salt from indium scraps generated from ITO glass manufacturing process was studied. Effects of parameters, such as type and concentration of organic acids, pH of reactant, temperature, reaction time on indium-oxalate salt preparation were examined. The impurity removal efficiency was similar for both oxalic acid and citric acid, but citric acid did not make organic acid salt with indium. The optimum conditions were 1.5 M oxalic acid, pH 7, 80 .deg. C, and 6 hours. On the other hand, the recoveries increased with pH, but the purity decreased. The indium-oxalate salt purity prepared by two cycles was 99.995% (4N5). The indium-oxalate salt could be converted to indium oxide and indium metal by substitution reaction and calcination

  7. Aluminium, gallium, indium and thallium

    International Nuclear Information System (INIS)

    Brown, Paul L.; Ekberg, Christian

    2016-01-01

    Aluminium can exist in a number of oxyhydroxide mineral phases including corundum, diaspore, boehmite and gibbsite. The stability constants at zero ionic strength reported for Al(OH) 3 (aq) vary linearly with respect to the inverse of absolute temperature. A full suite of thermodynamic parameters is available for all aluminium phases and hydrolysis species. Gallium hydrolyses to a greater extent than aluminium, with the onset of hydrolysis reactions occurring just above a pHof 1. In fact, even though aluminium has the smallest ionic radius of this series of metals, it has the weakest hydrolysis species and oxide/hydroxide phases.This is due to the presence of stabilising d-orbitals in the heavier metals, gallium, indium and thallium(III). There are few available data for the stability constants of indium(III) hydrolysis species. Of those that are available, the range in the proposed stability constants covers many orders of magnitude.

  8. Indium flotation from hydrometallurgical solutions

    International Nuclear Information System (INIS)

    Sviridov, V.V.; Mal'tsev, G.I.; Petryakova, N.K.; Gomzikov, A.I.

    1980-01-01

    The principal possibility of flotation of indium small quantities (10 -4 gxion/l) is established from sulphuric-acid solutions of leaching converter dusts of the copper melting production in the form of complex compounds with sodium hexametaphosphate and cation-active nitrogen-containing surfactants. It is shown that the flotation process effectiveness is determined by the molar ratio of hexametaphosphate and collector introduced into the solution, solution oxidity and surfactant nature

  9. Light forces on an indium atomic beam

    International Nuclear Information System (INIS)

    Kloeter, B.

    2007-01-01

    In this thesis it was studied, whether indium is a possible candidate for the nanostructuration respectively atomic lithography. For this known method for the generation and stabilization of the light necessary for the laser cooling had to be fitted to the special properties of indium. The spectroscopy of indium with the 451 nm and the 410 nm light yielded first hints that the formulae for the atom-light interaction for a two-level atom cannot be directly transferred to the indium atom. By means of the obtained parameters of the present experiment predictions for a possible Doppler cooling of the indium atomic beam were calculated. Furthermore the possibility for the direct deposition of indium on a substrate was studied

  10. Extraction of indium from extremely diluted solutions; Gewinnung von Indium aus extrem verduennten Loesungen

    Energy Technology Data Exchange (ETDEWEB)

    Vostal, Radek; Singliar, Ute; Froehlich, Peter [TU Bergakademie Freiberg (Germany). Inst. fuer Technische Chemie

    2017-02-15

    The demand for indium is rising with the growth of the electronics industry, where it is mainly used. Therefore, a multistage extraction process was developed to separate indium from a model solution whose composition was adequate to sphalerite ore. The initially very low concentration of indium in the solution was significantly increased by several successive extraction and reextraction steps. The process described is characterized by a low requirement for chemicals and a high purity of the obtained indium oxide.

  11. Nanomechanical Characterization of Indium Nano/Microwires

    Directory of Open Access Journals (Sweden)

    N Kiran MSR

    2010-01-01

    Full Text Available Abstract Nanomechanical properties of indium nanowires like structures fabricated on quartz substrate by trench template technique, measured using nanoindentation. The hardness and elastic modulus of wires were measured and compared with the values of indium thin film. Displacement burst observed while indenting the nanowire. ‘Wire-only hardness’ obtained using Korsunsky model from composite hardness. Nanowires have exhibited almost same modulus as indium thin film but considerable changes were observed in hardness value.

  12. Ship Track for Investigating the Charleston Bump 2003 - Office of Ocean Exploration

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Ship track of the R/V Seward Johnson during the "Investigating the Charleston Bump 2003" expedition sponsored by the National Oceanic and Atmospheric Administration...

  13. Comparison of Off-Line IR Bump and Action-Angle Kick Minimization

    CERN Document Server

    Luo, Yun; Ptitsyn, Vadim; Trbojevic, Dejan; Wei, Jie

    2005-01-01

    The interaction region bump (IR bump) nonlinear correction method has been used for the sextupole and octupole field error on-line corrections in the Relativistic Heavy Ion Collider (RHIC). Some differences were found for the sextupole and octupole corrector strengths between the on-line IR bump correction and the predictions from the action-angle kick minimization. In this report we compare the corrector strengths from these two methods based on the RHIC Blue ring lattice with the IR nonlinear modeling. The comparison confirms the differences between resulting corrector strengths. And the reason for the differences is found and discussed. It is followed by a further discussion of the operational IR bump applications to the octupole, and skew sextupole and skew quadrupole field error corrections.

  14. Ship Sensor Observations for Investigating the Charleston Bump 2003 - Office of Ocean Exploration

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Hourly measurements made by selected ship sensors on the R/V Seward Johnson during the "Investigating the Charleston Bump 2003" expedition sponsored by the National...

  15. Two-Dimensional Bumps in Piecewise Smooth Neural Fields with Synaptic Depression

    KAUST Repository

    Bressloff, Paul C.

    2011-01-01

    We analyze radially symmetric bumps in a two-dimensional piecewise-smooth neural field model with synaptic depression. The continuum dynamics is described in terms of a nonlocal integrodifferential equation, in which the integral kernel represents the spatial distribution of synaptic weights between populations of neurons whose mean firing rate is taken to be a Heaviside function of local activity. Synaptic depression dynamically reduces the strength of synaptic weights in response to increases in activity. We show that in the case of a Mexican hat weight distribution, sufficiently strong synaptic depression can destabilize a stationary bump solution that would be stable in the absence of depression. Numerically it is found that the resulting instability leads to the formation of a traveling spot. The local stability of a bump is determined by solutions to a system of pseudolinear equations that take into account the sign of perturbations around the circular bump boundary. © 2011 Society for Industrial and Applied Mathematics.

  16. The precipitation of indium at elevated pH in a stream influenced by acid mine drainage

    Science.gov (United States)

    White, Sarah Jane O.; Hussain, Fatima A.; Hemond, Harold F.; Sacco, Sarah A.; Shine, James P.; Runkel, Robert L.; Walton-Day, Katherine; Kimball, Briant A.

    2017-01-01

    Indium is an increasingly important metal in semiconductors and electronics and has uses in important energy technologies such as photovoltaic cells and light-emitting diodes (LEDs). One significant flux of indium to the environment is from lead, zinc, copper, and tin mining and smelting, but little is known about its aqueous behavior after it is mobilized. In this study, we use Mineral Creek, a headwater stream in southwestern Colorado severely affected by heavy metal contamination as a result of acid mine drainage, as a natural laboratory to study the aqueous behavior of indium. At the existing pH of ~ 3, indium concentrations are 6–29 μg/L (10,000 × those found in natural rivers), and are completely filterable through a 0.45 μm filter. During a pH modification experiment, the pH of the system was raised to > 8, and > 99% of the indium became associated with the suspended solid phase (i.e. does not pass through a 0.45 μm filter). To determine the mechanism of removal of indium from the filterable and likely primarily dissolved phase, we conducted laboratory experiments to determine an upper bound for a sorption constant to iron oxides, and used this, along with other published thermodynamic constants, to model the partitioning of indium in Mineral Creek. Modeling results suggest that the removal of indium from the filterable phase is consistent with precipitation of indium hydroxide from a dissolved phase. This work demonstrates that nonferrous mining processes can be a significant source of indium to the environment, and provides critical information about the aqueous behavior of indium.

  17. Franz Joseph Gall and music: the faculty and the bump.

    Science.gov (United States)

    Eling, Paul; Finger, Stanley; Whitaker, Harry

    2015-01-01

    The traditional story maintains that Franz Joseph Gall's (1758-1828) scientific program began with his observations of schoolmates with bulging eyes and good verbal memories. But his search to understand human nature, in particular individual differences in capacities, passions, and tendencies, can also be traced to other important observations, one being of a young girl with an exceptional talent for music. Rejecting contemporary notions of cognition, Gall concluded that behavior results from the interaction of a limited set of basic faculties, each with its own processes for perception and memory, each with its own territory in both cerebral or cerebellar cortices. Gall identified 27 faculties, one being the sense of tone relations or music. The description of the latter is identical in both his Anatomie et Physiologie and Sur les Fonctions du Cerveau et sur Celles de Chacune de ses Parties, where he provided positive and negative evidences and discussed findings from humans and lower animals, for the faculty. The localization of the cortical faculty for talented musicians, he explained, is demonstrated by a "bump" on each side of the skull just above the angle of the eye; hence, the lower forehead of musicians is broader or squarer than in other individuals. Additionally, differences between singing and nonsinging birds also correlate with cranial features. Gall even brought age, racial, and national differences into the picture. What he wrote about music reveals much about his science and creative thinking. © 2015 Elsevier B.V. All rights reserved.

  18. Evaluating the solution from MrBUMP and BALBES

    Science.gov (United States)

    Keegan, Ronan M.; Long, Fei; Fazio, Vincent J.; Winn, Martyn D.; Murshudov, Garib N.; Vagin, Alexei A.

    2011-01-01

    Molecular replacement is one of the key methods used to solve the problem of determining the phases of structure factors in protein structure solution from X-ray image diffraction data. Its success rate has been steadily improving with the development of improved software methods and the increasing number of structures available in the PDB for use as search models. Despite this, in cases where there is low sequence identity between the target-structure sequence and that of its set of possible homologues it can be a difficult and time-consuming chore to isolate and prepare the best search model for molecular replacement. MrBUMP and BALBES are two recent developments from CCP4 that have been designed to automate and speed up the process of determining and preparing the best search models and putting them through molecular replacement. Their intention is to provide the user with a broad set of results using many search models and to highlight the best of these for further processing. An overview of both programs is presented along with a description of how best to use them, citing case studies and the results of large-scale testing of the software. PMID:21460449

  19. Effect of wettability and topological features of Namib beetle inspired bumps on dropwise condensation

    Science.gov (United States)

    Ahmad, Shakeel; Tang, Hui; Yao, Haimin

    2017-11-01

    The Stenocara beetle lives in arid desert environment where the only available source of water is fog droplets. The beetle contains many hydrophobic/hydrophilic bumps on its back. Water collection occurs on the hydrophilic patches. Once the droplet reaches the critical volume, it sheds down due to gravity. Although a number of studies on condensation and water collection on beetle inspired structures have been reported in literature, most of them were on micro/nano scale textures. However, in nature the beetle bumps are in millimeter scale. At this scale the role of topological features and gravity becomes crucial for early droplet shedding. Therefore, in this work we numerically investigated the effects of bump shape, wettability contrast, surface slope and hydrophilic patch to total area ratio on droplet shedding volume and time. A three-dimensional lattice Boltzmann method (LBM) based numerical framework was used for the simulations. Compared with bumps of other shapes such a cube or a circular cylinder, faster droplet shedding was obtained over a hemispherical bump. Furthermore, it was found that larger hydrophilic patch to total area ratio for the hemispherical bump significantly increased the droplet shedding time.

  20. Stability of bumps in piecewise smooth neural fields with nonlinear adaptation

    KAUST Repository

    Kilpatrick, Zachary P.

    2010-06-01

    We study the linear stability of stationary bumps in piecewise smooth neural fields with local negative feedback in the form of synaptic depression or spike frequency adaptation. The continuum dynamics is described in terms of a nonlocal integrodifferential equation, in which the integral kernel represents the spatial distribution of synaptic weights between populations of neurons whose mean firing rate is taken to be a Heaviside function of local activity. Discontinuities in the adaptation variable associated with a bump solution means that bump stability cannot be analyzed by constructing the Evans function for a network with a sigmoidal gain function and then taking the high-gain limit. In the case of synaptic depression, we show that linear stability can be formulated in terms of solutions to a system of pseudo-linear equations. We thus establish that sufficiently strong synaptic depression can destabilize a bump that is stable in the absence of depression. These instabilities are dominated by shift perturbations that evolve into traveling pulses. In the case of spike frequency adaptation, we show that for a wide class of perturbations the activity and adaptation variables decouple in the linear regime, thus allowing us to explicitly determine stability in terms of the spectrum of a smooth linear operator. We find that bumps are always unstable with respect to this class of perturbations, and destabilization of a bump can result in either a traveling pulse or a spatially localized breather. © 2010 Elsevier B.V. All rights reserved.

  1. Evaluated neutronic file for indium

    International Nuclear Information System (INIS)

    Smith, A.B.; Chiba, S.; Smith, D.L.; Meadows, J.W.; Guenther, P.T.; Lawson, R.D.; Howerton, R.J.

    1990-01-01

    A comprehensive evaluated neutronic data file for elemental indium is documented. This file, extending from 10 -5 eV to 20 MeV, is presented in the ENDF/B-VI format, and contains all neutron-induced processes necessary for the vast majority of neutronic applications. In addition, an evaluation of the 115 In(n,n') 116m In dosimetry reaction is presented as a separate file. Attention is given in quantitative values, with corresponding uncertainty information. These files have been submitted for consideration as a part of the ENDF/B-VI national evaluated-file system. 144 refs., 10 figs., 4 tabs

  2. Carbon Isotopes in Globular Clusters Down to the Bump in the Luminosity Function

    Science.gov (United States)

    Shetrone, Matthew D.

    2003-03-01

    We find that the 12C/13C ratio evolves from high values (>20) below the bump in the luminosity function (BLF) to near the equilibrium value of the CNO cycle above the BLF in the globular clusters (GCs) NGC 6528 and M4. This is the first time that the predicted decline of the 12C/13C ratios due to the extra mixing at the BLF is detected in a GC. In M4, a slight decline from 12C/13C = 10 just above the BLF at MV=+0.5 to 12C/13C = 4 at MV=-0.6 is detected, suggesting that some additional mixing may occur beyond the BLF in this cluster. Isotope ratios are measured and found to be constant in the GCs NGC 6553 and 47 Tucanae down to just above the BLF of those GCs. Based on observations made in part at the W. M. Keck Observatory by the Gemini staff, supported by the Gemini Observatory, which is operated by the Association of Universities of Research in Astronomy, Inc., on behalf of the international Gemini partnership of Argentina, Australia, Brazil, Canada, Chile, the UK, and the US. The W. M. Keck Observatory is operated as a scientific partnership among the California Institute of Technology, the University of California, and the National Aeronautics and Space Administration. The Observatory was made possible by the generous financial support of the W. M. Keck Foundation.

  3. Pain over speed bumps in diagnosis of acute appendicitis: diagnostic accuracy study.

    Science.gov (United States)

    Ashdown, Helen F; D'Souza, Nigel; Karim, Diallah; Stevens, Richard J; Huang, Andrew; Harnden, Anthony

    2012-12-14

    To assess the diagnostic accuracy of pain on travelling over speed bumps for the diagnosis of acute appendicitis. Prospective questionnaire based diagnostic accuracy study. Secondary care surgical assessment unit at a district general hospital in the UK. 101 patients aged 17-76 years referred to the on-call surgical team for assessment of possible appendicitis. Sensitivity, specificity, positive and negative predictive values, and positive and negative likelihood ratios for pain over speed bumps in diagnosing appendicitis, with histological diagnosis of appendicitis as the reference standard. The analysis included 64 participants who had travelled over speed bumps on their journey to hospital. Of these, 34 had a confirmed histological diagnosis of appendicitis, 33 of whom reported increased pain over speed bumps. The sensitivity was 97% (95% confidence interval 85% to 100%), and the specificity was 30% (15% to 49%). The positive predictive value was 61% (47% to 74%), and the negative predictive value was 90% (56% to 100%). The likelihood ratios were 1.4 (1.1 to 1.8) for a positive test result and 0.1 (0.0 to 0.7) for a negative result. Speed bumps had a better sensitivity and negative likelihood ratio than did other clinical features assessed, including migration of pain and rebound tenderness. Presence of pain while travelling over speed bumps was associated with an increased likelihood of acute appendicitis. As a diagnostic variable, it compared favourably with other features commonly used in clinical assessment. Asking about speed bumps may contribute to clinical assessment and could be useful in telephone assessment of patients.

  4. Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

    Science.gov (United States)

    2011-03-01

    spectrum, photoluminescence (PL), and refractive index measurements. Other methods such as infrared imagery and micro probe wavelength dispersing ...States. AFIT/DS/ENP/11-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF MELT- GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ...CHARACTERIZATION OF MELT-GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ALLOYS Jean Wei, BS, MS Approved

  5. Investigation of Sn-Pb solder bumps of prototype photo detectors for the LHCb experiment

    CERN Document Server

    Delsante, M L; Arnau-Izquierdo, G

    2004-01-01

    The Large Hadron Collider (LHC) is now under construction at the European Organization for Nuclear Research (CERN). LHCb is one of the dedicated LHC experiments, allowing high energy proton-proton collisions to be exploited. This paper presents the results of the metallurgic studies carried out on Sn-Pb solder bumps of prototype vacuum photo detectors under development for LHCb, and in particular for the ring imaging Cherenkov-hybrid photo diode (RICH-HPD) project. These detectors encapsulate, in a vacuum tube, an assembly made of two silicon chips bonded together by a matrix of solder bumps. Each bump lies on a suitable system of under-bump metallic layers ensuring mechanical and electrical transition between the chip pad and the solder alloy. During manufacturing of the detector, bump-bonded (BB) assemblies are exposed to severe heat cycles up to 400 degree C inducing, in the present fabrication process, a clear degradation of electrical connectivity. Several investigations such as microstructural observati...

  6. Peculiarities of the interaction of indium-tin and indium-bismuth alloys with ammonium halides

    International Nuclear Information System (INIS)

    Red'kin, A.N.; Smirnov, V.A.; Sokolova, E.A.; Makovej, Z.I.; Telegin, G.F.

    1990-01-01

    Peculiarities of fusible metal alloys interaction with ammonium halogenides in vertical reactor are considered using indium-tin and indium-bismuth binary alloys. It is shown that at the end of the process the composition of metal and salt phases is determined by the equilibrium type and constant characteristic of the given salt-metal system. As a result the interaction of indium-tin and indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium which may be used in the processes of separation or purification. A model is suggested to calculate the final concentration of salt and metal phase components

  7. Indium-bridged [1]ferrocenophanes.

    Science.gov (United States)

    Bagh, Bidraha; Sadeh, Saeid; Green, Jennifer C; Müller, Jens

    2014-02-17

    Indium-bridged [1]ferrocenophanes ([1]FCPs) and [1.1]ferrocenophanes ([1.1]FCPs) were synthesized from dilithioferrocene species and indium dichlorides. The reaction of Li2fc⋅tmeda (fc = (H4C5)2Fe) and (Mamx)InCl2 (Mamx = 6-(Me2NCH2)-2,4-tBu2C6H2) gave a mixture of the [1]FCP (Mamx)Infc (4(1)), the [1.1]FCP [(Mamx)Infc]2 (4(2)), and oligomers [(Mamx)Infc]n (4(n)). In a similar reaction, employing the enantiomerically pure, planar-chiral (Sp,Sp)-1,1'-dibromo-2,2'-diisopropylferrocene (1) as a precursor for the dilithioferrocene derivative Li2fc(iPr2), equipped with two iPr groups in the α position, gave the inda[1]ferrocenophane 5(1) [(Mamx)Infc(iPr2)] selectively. Species 5(1) underwent ring-opening polymerization to give the polymer 5(n). The reaction between Li2fc(iPr2) and Ar'InCl2 (Ar' = 2-(Me2NCH2)C6H4) gave an inseparable mixture of the [1]FCP Ar'Infc(iPr2) (6(1)) and the [1.1]FCP [Ar'Infc(iPr2)]2 (6(2)). Hydrogenolysis reactions (BP86/TZ2P) of the four inda[1]ferrocenophanes revealed that the structurally most distorted species (5(1)) is also the most strained [1]FCP. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Fluxless flip-chip bonding using a lead-free solder bumping technique

    Science.gov (United States)

    Hansen, K.; Kousar, S.; Pitzl, D.; Arab, S.

    2017-09-01

    With the LHC exceeding the nominal instantaneous luminosity, the current barrel pixel detector (BPIX) of the CMS experiment at CERN will reach its performance limits and undergo significant radiation damage. In order to improve detector performance in high luminosity conditions, the entire BPIX is replaced with an upgraded version containing an additional detection layer. Half of the modules comprising this additional layer are produced at DESY using fluxless and lead-free bumping and bonding techniques. Sequential solder-jetting technique is utilized to wet 40-μm SAC305 solder spheres on the silicon-sensor pads with electroless Ni, Pd and immersion Au (ENEPIG) under-bump metallization (UBM). The bumped sensors are flip-chip assembled with readout chips (ROCs) and then reflowed using a flux-less bonding facility. The challenges for jetting low solder volume have been analyzed and will be presented in this paper. An average speed of 3.4 balls per second is obtained to jet about 67 thousand solder balls on a single chip. On average, 7 modules have been produced per week. The bump-bond quality is evaluated in terms of electrical and mechanical properties. The peak-bump resistance is about 17.5 mΩ. The cross-section study revealed different types of intermetallic compounds (IMC) as a result of interfacial reactions between UBM and solder material. The effect of crystalline phases on the mechanical properties of the joint is discussed. The mean shear strength per bump after the final module reflow is about 16 cN. The results and sources of yield loss of module production are reported. The achieved yield is 95%.

  9. Polarographic determination of selenium in indium

    International Nuclear Information System (INIS)

    Kaplan, B.Ya.; Mikheeva, V.A.; Priz, N.B.

    1978-01-01

    The procedure of determining nx10 -6 % Se in indium after concentrating in an elemental form on arsenic and sulphur has been developed. The selenium content is determined by inversion a.c. polarography on a sulphuric-acid background in the presence of Cu(2), potassium bichromate, and sodium pyrophosphate. 5.7x10 -6 % Se in metal indium has been determined by this procedure, the mean standard deviation being Sr=0.26

  10. Quantification of indium in steel using PIXE

    International Nuclear Information System (INIS)

    Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J.C.

    1989-01-01

    The quantitative analysis of steel endodontics tools was carried out using low-energy protons (≤ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important. (orig.)

  11. Quantification of indium in steel using PIXE

    Energy Technology Data Exchange (ETDEWEB)

    Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J.C.

    1989-04-01

    The quantitative analysis of steel endodontics tools was carried out using low-energy protons (/le/ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important. (orig.).

  12. Trapping saturation of the bump-on-tail instability and electrostatic harmonic excitation in earth's foreshock

    Science.gov (United States)

    Klimas, Alexander J.

    1990-01-01

    The Vlasov simulation is used to examine the trapping saturation of the bump-on-tail instability both with and without mode-mode coupling and subsequent harmonic excitation. It is found that adding the pumped harmonic modes leads to a significant difference in the behavior of the phase-space distribution function near the unstable bump at the saturation time of the instability. The pumped modes permit rapid plateau formation on the space-averaged velocity distribution, in effect preventing the onset of the quasi-linear velocity-diffusion saturation mechanism.

  13. Aging treatment characteristics of solder bump joint for high reliability optical module

    International Nuclear Information System (INIS)

    Kim, Kyung-Seob; Yu, Chung-Hee; Yang, Jun-Mo

    2004-01-01

    The joint strength and fracture surfaces of Sn-37 mass% Pb and Au stud bumps for photo diode packages after isothermal aging testing were studied experimentally. Al/Au stud bumps and Cu/Sn-37 mass% Pb solders were adopted, and aged for up to 900 h to analyze the effect of intermetallic compound (IMC). The joint strength decreased with aging time. The diffraction patterns of Cu 6 Sn 5 , scallop-shaped IMCs, and planar-shaped Cu 3 Sn were characterized using transmission electron microscopy (TEM). The formation of Kirkendall voids and the growth of IMCs at the solder were found to be a possible mechanism for joint strength reduction

  14. The reminiscence bump for public events: A review of its prevalence and taxonomy of alternative age distributions

    DEFF Research Database (Denmark)

    Koppel, Jonathan Mark

    2013-01-01

    a legitimate effect, and (ii) the alternative age distributions that are otherwise seen in recall for public events. I conclude that, though the bump is frequently found, the legitimacy of the effect is contingent upon the strictness of the standard one employs. I also find significant exceptions to the bump...

  15. Investigation Of The Effects Of Reflow Profile Parameters On Lead-free Solder Bump Volumes And Joint Integrity

    Science.gov (United States)

    Amalu, E. H.; Lui, Y. T.; Ekere, N. N.; Bhatti, R. S.; Takyi, G.

    2011-01-01

    The electronics manufacturing industry was quick to adopt and use the Surface Mount Technology (SMT) assembly technique on realization of its huge potentials in achieving smaller, lighter and low cost product implementations. Increasing global customer demand for miniaturized electronic products is a key driver in the design, development and wide application of high-density area array package format. Electronic components and their associated solder joints have reduced in size as the miniaturization trend in packaging continues to be challenged by printing through very small stencil apertures required for fine pitch flip-chip applications. At very narrow aperture sizes, solder paste rheology becomes crucial for consistent paste withdrawal. The deposition of consistent volume of solder from pad-to-pad is fundamental to minimizing surface mount assembly defects. This study investigates the relationship between volume of solder paste deposit (VSPD) and the volume of solder bump formed (VSBF) after reflow, and the effect of reflow profile parameters on lead-free solder bump formation and the associated solder joint integrity. The study uses a fractional factorial design (FFD) of 24-1 Ramp-Soak-Spike reflow profile, with all main effects and two-way interactions estimable to determine the optimal factorial combination. The results from the study show that the percentage change in the VSPD depends on the combination of the process parameters and reliability issues could become critical as the size of solder joints soldered on the same board assembly vary greatly. Mathematical models describe the relationships among VSPD, VSBF and theoretical volume of solder paste. Some factors have main effects across the volumes and a number of interactions exist among them. These results would be useful for R&D personnel in designing and implementing newer applications with finer-pitch interconnect.

  16. CO2laser-induced bump formation and growth on polystyrene for multi-depth soft lithography molds

    KAUST Repository

    Li, Huawei

    2012-10-19

    This paper reports the process of creating bumps on the surface of polystyrene (PS) induced by a CO2laser at low powers. The paper also outlines the procedure for growing bumps induced by multiple laser scans on the aforementioned bumps. These bumps result from the net volume gain of the laser heat-affected zone on the PS rather than from a deposition process, and the expansion of the heat-affected zone on PS was verified by measuring the hardness change using nanoindentation. The bumps have a much smoother surface than microchannels fabricated with laser cutting; depending on the laser power, they have heights ranging from hundreds of nanometers to 42m. The laser scanning speed and scan times along with this technique offer a fast and low-cost alternative for fabricating molds for multi-depth PDMS microfluidic devices. © 2012 IOP Publishing Ltd.

  17. CO2 laser-induced bump formation and growth on polystyrene for multi-depth soft lithography molds

    International Nuclear Information System (INIS)

    Li, Huawei; Fan, Yiqiang; Conchouso, David; Foulds, Ian G

    2012-01-01

    This paper reports the process of creating bumps on the surface of polystyrene (PS) induced by a CO 2 laser at low powers. The paper also outlines the procedure for growing bumps induced by multiple laser scans on the aforementioned bumps. These bumps result from the net volume gain of the laser heat-affected zone on the PS rather than from a deposition process, and the expansion of the heat-affected zone on PS was verified by measuring the hardness change using nanoindentation. The bumps have a much smoother surface than microchannels fabricated with laser cutting; depending on the laser power, they have heights ranging from hundreds of nanometers to 42 µm. The laser scanning speed and scan times along with this technique offer a fast and low-cost alternative for fabricating molds for multi-depth PDMS microfluidic devices. (paper)

  18. Indium Tin Oxide-Free Polymer Solar Cells: Toward Commercial Reality

    DEFF Research Database (Denmark)

    Angmo, Dechan; Espinosa Martinez, Nieves; Krebs, Frederik C

    2014-01-01

    Polymer solar cell (PSC) is the latest of all photovoltaic technologies which currently lies at the brink of commercialization. The impetus for its rapid progress in the last decade has come from low-cost high throughput production possibility which in turn relies on the use of low-cost materials...... and vacuum-free manufacture. Indium tin oxide (ITO), the commonly used transparent conductor, imposes the majority of the cost of production of PSCs, limits flexibility, and is feared to create bottleneck in the dawning industry due to indium scarcity and the resulting large price fluctuations. As such...

  19. Recovery of galium and indium from liquid crystal displays and CIGS photovailtaic modules

    NARCIS (Netherlands)

    Bisselink, R.; Steeghs, W.; Brouwer, J.G.H.

    2014-01-01

    Abstract: The increasing amount of electronics, such as consumer products and green technologies (e.g. solar PV cells) increases the demand of metals such as indium and gallium. This increasing demand together with the dependency on import of these metals drive research on recycling of waste

  20. Trapping saturation of the bump-on-tail instability and electrostatic harmonic excitation in Earth's foreshock

    International Nuclear Information System (INIS)

    Klimas, A.J.

    1990-01-01

    Trapping saturation of the bump-on-tail instability is discussed using electron plasma Vlasov simulation results. The role of electrostatic harmonic excitation is considered in detail and shown to play a decisive role in the saturation of the instability. An extensive discussion of the simulation results is given to show that the results are not significantly limited by the finite number of Fourier modes used nor by the discrete distribution of those modes in wave number. It is argued that in the leading edge of Earth's electron foreshock a narrow wave number band of unstable field modes leads to trapping saturation of the bump-on-tail instability while simultaneously exciting electrostatic plasma waves at harmonics of the plasma frequency in simialr narrow bands of shorter wavelengths. The argument is based (1) on the observations of Lacombe et al. (1985), who found intense plasma waves at the leading edge of the foreshock with a spectral distribution sufficiently narrow to trap particles in resonance with the waves, and (2) on numerical simulations of the foreshock electron plasma which indicate that trapping saturation of the bump-on-tail instability leads to phase space vortex formation with consequent excitation of electrostatic harmonics. Thus it is suggested that observations of electrostatic harmonics in the leading edge of the foreshock would strongly implicate trapping as the saturation mechanism for the bump-on-tail instability in that region

  1. Decomposing the sales promotion bump accounting for cross-category effects

    NARCIS (Netherlands)

    Leeflang, Peter S. H.; Selva, Josefa Parreno; Wittink, Dick R.; Dijk, Albertus Alard van

    Extant research on the decomposition of unit sales bumps due to price promotions considers these effects only within a single product category. This article introduces a framework that accommodates specific cross-category effects. Empirical results based on daily data measured at the item/SKU level

  2. Stress Distribution in a Coal Seam before and after Bump Initiation

    Directory of Open Access Journals (Sweden)

    J. Vacek

    2001-01-01

    Full Text Available This paper deals with to the behaviour of open rock that occurs, for example, during longwall mining in coal mines, in deep tunnel, or shaft excavation.Longwall instability leads to extrusion of rock mass into an open space. This effect is mostly referred to as a bump, or a rock burst. For bumps to occur, the rock has to possess certain particular rock burst properties leading to accumulation of energy and the potential to release this energy. Such materials may be brittle, or the bumps may arise at the interfacial zones of two parts of the rock, that have principally different material properties.The solution is based on experimental and mathematical modelling. These two methods have to allow the problem to be studied on the basis of three presumptions: – the solution must be time dependent – the solution must allow the creation of crack in the rock mass – the solution must allow an extrusion of rock into an open space (bump effect

  3. Cross-Validation of Survival Bump Hunting by Recursive Peeling Methods.

    Science.gov (United States)

    Dazard, Jean-Eudes; Choe, Michael; LeBlanc, Michael; Rao, J Sunil

    2014-08-01

    We introduce a survival/risk bump hunting framework to build a bump hunting model with a possibly censored time-to-event type of response and to validate model estimates. First, we describe the use of adequate survival peeling criteria to build a survival/risk bump hunting model based on recursive peeling methods. Our method called "Patient Recursive Survival Peeling" is a rule-induction method that makes use of specific peeling criteria such as hazard ratio or log-rank statistics. Second, to validate our model estimates and improve survival prediction accuracy, we describe a resampling-based validation technique specifically designed for the joint task of decision rule making by recursive peeling (i.e. decision-box) and survival estimation. This alternative technique, called "combined" cross-validation is done by combining test samples over the cross-validation loops, a design allowing for bump hunting by recursive peeling in a survival setting. We provide empirical results showing the importance of cross-validation and replication.

  4. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  5. The 1600 Å Emission Bump in Protoplanetary Disks: A Spectral Signature of H2O Dissociation

    Science.gov (United States)

    France, Kevin; Roueff, Evelyne; Abgrall, Hervé

    2017-08-01

    The FUV continuum spectrum of many accreting pre-main sequence stars, Classical T Tauri Stars (CTTSs), does not continue smoothly from the well-studied Balmer continuum emission in the NUV, suggesting that additional processes contribute to the short-wavelength emission in these objects. The most notable spectral feature in the FUV continuum of some CTTSs is a broad emission approximately centered at 1600 Å, which has been referred to as the “1600 Å Bump.” The origin of this feature remains unclear. In an effort to better understand the molecular properties of planet-forming disks and the UV spectral properties of accreting protostars, we have assembled archival FUV spectra of 37 disk-hosting systems observed by the Hubble Space Telescope-Cosmic Origins Spectrograph. Clear 1600 Å Bump emission is observed above the smooth, underlying 1100-1800 Å continuum spectrum in 19/37 Classical T Tauri disks in the HST-COS sample, with the detection rate in transition disks (8/8) being much higher than that in primordial or non-transition sources (11/29). We describe a spectral deconvolution analysis to separate the Bump (spanning 1490-1690 Å) from the underlying FUV continuum, finding an average Bump luminosity L(Bump) ≈ 7 × 1029 erg s-1. Parameterizing the Bump with a combination of Gaussian and polynomial components, we find that the 1600 Å Bump is characterized by a peak wavelength λ o = 1598.6 ± 3.3 Å, with FWHM = 35.8 ± 19.1 Å. Contrary to previous studies, we find that this feature is inconsistent with models of H2 excited by electron -impact. We show that this Bump makes up between 5%-50% of the total FUV continuum emission in the 1490-1690 Å band and emits roughly 10%-80% of the total fluorescent H2 luminosity for stars with well-defined Bump features. Energetically, this suggests that the carrier of the 1600 Å Bump emission is powered by Lyα photons. We argue that the most likely mechanism is Lyα-driven dissociation of H2O in the inner disk, r

  6. A novel method for direct solder bump pull testing using lead-free solders

    Science.gov (United States)

    Turner, Gregory Alan

    This thesis focuses on the design, fabrication, and evaluation of a new method for testing the adhesion strength of lead-free solders, named the Isotraction Bump Pull method (IBP). In order to develop a direct solder joint-strength testing method that did not require customization for different solder types, bump sizes, specific equipment, or trial-and-error, a combination of two widely used and accepted standards was created. First, solder bumps were made from three types of lead free solder were generated on untreated copper PCB substrates using an in-house fabricated solder bump-on-demand generator, Following this, the newly developed method made use of a polymer epoxy to encapsulate the solder bumps that could then be tested under tension using a high precision universal vertical load machine. The tests produced repeatable and predictable results for each of the three alloys tested that were in agreement with the relative behavior of the same alloys using other testing methods in the literature. The median peak stress at failure for the three solders tested were 2020.52 psi, 940.57 psi, and 2781.0 psi, and were within one standard deviation of the of all data collected for each solder. The assumptions in this work that brittle fracture occurred through the Intermetallic Compound layer (IMC) were validated with the use of Energy-Dispersive X-Ray Spectrometry and high magnification of the fractured surface of both newly exposed sides of the test specimens. Following this, an examination of the process to apply the results from the tensile tests into standard material science equations for the fracture of the systems was performed..

  7. The BUMP model of response planning: intermittent predictive control accounts for 10 Hz physiological tremor.

    Science.gov (United States)

    Bye, Robin T; Neilson, Peter D

    2010-10-01

    Physiological tremor during movement is characterized by ∼10 Hz oscillation observed both in the electromyogram activity and in the velocity profile. We propose that this particular rhythm occurs as the direct consequence of a movement response planning system that acts as an intermittent predictive controller operating at discrete intervals of ∼100 ms. The BUMP model of response planning describes such a system. It forms the kernel of Adaptive Model Theory which defines, in computational terms, a basic unit of motor production or BUMP. Each BUMP consists of three processes: (1) analyzing sensory information, (2) planning a desired optimal response, and (3) execution of that response. These processes operate in parallel across successive sequential BUMPs. The response planning process requires a discrete-time interval in which to generate a minimum acceleration trajectory to connect the actual response with the predicted future state of the target and compensate for executional error. We have shown previously that a response planning time of 100 ms accounts for the intermittency observed experimentally in visual tracking studies and for the psychological refractory period observed in double stimulation reaction time studies. We have also shown that simulations of aimed movement, using this same planning interval, reproduce experimentally observed speed-accuracy tradeoffs and movement velocity profiles. Here we show, by means of a simulation study of constant velocity tracking movements, that employing a 100 ms planning interval closely reproduces the measurement discontinuities and power spectra of electromyograms, joint-angles, and angular velocities of physiological tremor reported experimentally. We conclude that intermittent predictive control through sequential operation of BUMPs is a fundamental mechanism of 10 Hz physiological tremor in movement. Copyright © 2010 Elsevier B.V. All rights reserved.

  8. Indium oxide/n-silicon heterojunction solar cells

    Science.gov (United States)

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  9. Sputtering of neutral and ionic indium clusters

    International Nuclear Information System (INIS)

    Ma, Z.; Coon, S.R.; Calaway, W.F.; Pellin, M.J.; Gruen, D.M.; Von Nagy-Felsobuki, E.I.

    1993-01-01

    Secondary neutral and secondary ion cluster yields were measured during the sputtering of a polycrystalline indium surface by normally incident ∼4 keV Ar + ions. In the secondary neutral mass spectra, indium clusters as large as In 32 were observed. In the secondary ion mass spectra, indium clusters up to In 18 + were recorded. Cluster yields obtained from both the neutral and ion channel exhibited a power law dependence on the number of constituent atoms, n, in the cluster, with the exponents measured to be -5.6 and -4. 1, respectively. An abundance drop was observed at n=8, 15, and 16 in both the neutral and ion yield distributions suggesting that the stability of the ion (either secondary ion or photoion) plays a significant role in the observed distributions. In addition, our experiments suggest that unimolecular decomposition of the neutral cluster may also plays an important role in the measured yield distributions

  10. The indium-oxygen system, ch. 5

    International Nuclear Information System (INIS)

    Dillen, A.J. van

    1977-01-01

    This chapter is divided into three sections: 1) a survey of the literature concerning the indiumoxygen system, 2) the adsorption of oxygen at pure and partially oxidized indium surfaces in the temperature range 20-180degC, and 3) the oxidation of indium at temperatures above 180degC. The oxygen uptake is determined volumetrically and gravimetrically. The influence of the melting point is considered and the results are compared with data from the literature. The oxide layer is amorphous at lower temperatures but above 350degC, crystallisation of In 2 O 3 takes place

  11. Labelling of bacteria with indium chelates

    International Nuclear Information System (INIS)

    Kleinert, P.; Pfister, W.; Endert, G.; Sproessig, M.

    1985-01-01

    The indium chelates were prepared by reaction of radioactive indiumchloride with 10 μg oxine, 15 μg tropolone and 3 mg acetylacetone, resp. The formed chelates have been incubated with 10 9 germs/ml for 5 minutes, with labelling outputs from 90 to 95%. Both gram-positive (Streptococcus, Staphylococcus) and gram-negative bacteria (Escherichia coli) can be labelled. The reproductive capacity of the bacteria was not impaired. The application of indium labelled bacteria allows to show the distribution of microorganisms within the living organism and to investigate problems of bacterial adherence. (author)

  12. Neutral complexes of the indium dihalides

    Energy Technology Data Exchange (ETDEWEB)

    Sinclair, I.; Worrall, I.J. (Lancaster Univ. (UK))

    1982-03-15

    The neutral complexes In/sub 2/X/sub 4/.2L (X=Cl, Br, I; L 1,4-dioxan, tetrahydropyran, tetrahydrofuran, tetrahydrothiophene), In/sub 2/X/sub 4/.2L (X=Br, I; Ldimethylsulphide), In/sub 2/X/sub 4/.4L (X=Cl, Br, I; Lpiperidine, piperazine, morpholine), and In/sub 2/X/sub 4/.4L (X=Br, I; L=pyridine, dimethylsulphoxide) have been prepared. Solid state Raman spectra indicate that the compounds contain indium-indium bonds.

  13. Indium 111 leucocyte scintigraphy in abdominal sepsis

    International Nuclear Information System (INIS)

    Baba, A.A.; McKillop, J.H.; Gray, H.W.; Cuthbert, G.F.; Neilson, W.; Anderson, J.R.

    1990-01-01

    We have studied the clinical utility of indium 111 autologous leucocyte scintigraphy retrospectively in 45 patients presenting with suspected intra-abdominal sepsis. The sensitivity was 95% (21/22) and the specificity was 91% (21/23). Some 34 of the studies (17 positive and 17 negative) were considered helpful in furthering patient management (76%) and 8, unhelpful (18%). In 3, the study results were misleading and led to inappropriate treatment. Indium 111 scintigraphy, whether positive or negative, provides information in patients with suspected intra-abdominal sepsis upon which therapeutic decisions can be based. (orig.)

  14. Proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices

    International Nuclear Information System (INIS)

    Singh, R.; Messick, L.J.

    1989-01-01

    This book contains the proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices. Topics covered include: Growth and characterization of bulk and epitaxial films, Passivation technology, Processing technology, High speed optoelectronic integrated circuits, and Solar cells

  15. Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

    International Nuclear Information System (INIS)

    Chen Peng; An Zhenghua; Zhu Ming; Fu, Ricky K.Y.; Chu, Paul K.; Montgomery, Neil; Biswas, Sukanta

    2004-01-01

    The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10 14 cm -2 ) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure

  16. Light curves for ''bump Cepheids'' computed with a dynamically zoned pulsation code

    International Nuclear Information System (INIS)

    Adams, T.F.; Castor, J.E.; Davis, C.G.

    1978-01-01

    The dynamically zoned pulsation code developed by Castor, Davis, and Davison has been used to recalculate the Goddard model and to calculate three other Cepheid models with the same period (9.8 days). This family of models shows how the bumps and other features of the light and velocity curves change as the mass is varied at constant period. This study, with a code that is capable of producing reliable light curves, shows again that the light and velocity curves for 9.8-day Cepheid models with standard homogeneous compositions do not show bumps like those that are observed unless the mass is significantly lower than the ''evolutionary mass.'' The light and velocity curves for the Goddard model presented here are similar to those computed independently by Fischel, Sparks, and Karp. They should be useful as standards for future investigators

  17. Detection of bump-on-tail reduced electron velocity distributions at the electron foreshock boundary

    International Nuclear Information System (INIS)

    Fitzenreiter, R.J.; Klimas, A.J.; Scudder, J.D.

    1984-02-01

    Reduced velocity distributions are derived from three-dimensional measurements of the velocity distribution of electrons in the 7 to 500 eV range in the electron foreshock. Bump-on-tail reduced distributions are presented for the first time at the foreshock boundary consistent with Filbert and Kellogg's proposed time-of-flight mechanism for generating the electron beams. In a significant number of boundary crossings, bump-on-tail reduced distributions were found in consecutive 3 sec measurements made 9 sec apart. It is concluded that, although the beams are linearly unstable to plasma waves according to the Penrose criterion, they persist on a time scale of 3 to 15 sec

  18. Bumps, breathers, and waves in a neural network with spike frequency adaptation

    International Nuclear Information System (INIS)

    Coombes, S.; Owen, M.R.

    2005-01-01

    We introduce a continuum model of neural tissue that includes the effects of spike frequency adaptation (SFA). The basic model is an integral equation for synaptic activity that depends upon nonlocal network connectivity, synaptic response, and the firing rate of a single neuron. We consider a phenomenological model of SFA via a simple state-dependent threshold firing rate function. As without SFA, Mexican-hat connectivity allows for the existence of spatially localized states (bumps). Importantly recent Evans function techniques are used to show that bumps may destabilize leading to the emergence of breathers and traveling waves. Moreover, a similar analysis for traveling pulses leads to the conditions necessary to observe a stable traveling breather. Simulations confirm our theoretical predictions and illustrate the rich behavior of this model

  19. Bumping structure of initial energy density distributions and peculiarities of pion spectra in A + A collisions

    International Nuclear Information System (INIS)

    Borysova, M.S.

    2012-01-01

    The effect of a fluctuating bumping structure of the initial conditions on spectra and the collective evolution of matter created in heavy-ion collisions in the frameworks of the Hydro-Kinetic Model is investigated. As motivated by the glasma-flux-tube scenario, the initial conditions are modeled by the set of four high energy-density tube-like fluctuations with longitudinally homogeneous structure within some space-rapidity region in a boost-invariant 2D geometry. It was found that the presence of transversally bumping tube-like fluctuations in initial conditions strongly affects the hydrodynamic evolution and leads to emergence of conspicuous structures in the calculated pion spectra. It was observed that the 4 tube initial configuration generates a four-peak structure in the final azimuthal distributions of one-particle spectra.

  20. NOAA TIFF Image - 50m Backscatter, Charleston Bump - Deep Coral Priority Areas - Nancy Foster - (2006), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the backscatter intensity of the Charleston Bump off of the South Atlantic Bight,...

  1. NOAA TIFF Image - 30m Rugosity, Charleston Bump - Deep Coral Priority Areas - Thomas Jefferson - (2007), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

  2. NOAA TIFF Image - 50m Rugosity, Charleston Bump - Deep Coral Priority Areas - Whiting - (2001), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 50x50 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

  3. NOAA TIFF Image - 50m Rugosity, Charleston Bump - Deep Coral Priority Areas - Whiting - (2000), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 50x50 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

  4. NOAA TIFF Image - 50m Singlebeam Slope, Charleston Bump - Deep Coral Priority Areas - Whiting - (2000), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 50x50 meter cell size representing the slope of the Charleston Bump off of the South Atlantic Bight, derived from...

  5. NOAA TIFF Image - 50m Singlebeam Bathymetry, Charleston Bump - Deep Coral Priority Areas - Whiting - (2000), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 50x50 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

  6. NOAA TIFF Image - 50m Multibeam Bathymetry, Charleston Bump - Deep Coral Priority Areas - Whiting - (2001), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 50x50 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

  7. NOAA TIFF Image - 30m Rugosity, Charleston Bump - Deep Coral Priority Areas - Nancy Foster - (2006), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the 2006 multibeam bathymetry of the Charleston Bump off of the South Atlantic Bight,...

  8. NOAA TIFF Image - 30m Slope, Charleston Bump - Deep Coral Priority Areas - Little Hales- (2003), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the slope (in degrees) of themultibeam bathymetry of the Charleston Bump off of the...

  9. NOAA TIFF Image - 30m Slope, Charleston Bump - Deep Coral Priority Areas - Nancy Foster - (2006), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the slope (in degrees) of the 2006 multibeam bathymetry of the Charleston Bump off of...

  10. Synthesis of indium-111 mesoprotoporphyrin IX

    International Nuclear Information System (INIS)

    Lee, K.M.; Marshall, A.G.

    1981-01-01

    Indium-111 mesoprotoporphyrin IX has been prepared by refluxing suitable proportions of InCl 3 , sodium acetate, and mesoprotoporphyrin IX in glacial acetic acid. The labeled metalloporphyrin is sufficiently water-soluble for use as a scanning agent, and can also be incorporated into heme apoproteins for perturbed gamma-gamma angular correlation measurements. (author)

  11. Multipole error analysis using local 3-bump orbit data in Fermilab Recycler

    International Nuclear Information System (INIS)

    Yang, M.J.; Xiao, M.

    2005-01-01

    The magnetic harmonic errors of the Fermilab Recycler ring were examined using circulating beam data taken with closed local orbit bumps. Data was first parsed into harmonic orbits of first, second, and third order. Each of which was analyzed for sources of magnetic errors of corresponding order. This study was made possible only with the incredible resolution of a new BPM system that was commissioned after June of 2003

  12. Single-mode saturation of the bump-on-tail instability

    International Nuclear Information System (INIS)

    Simon, A.; Rosenbluth, M.N.

    1976-01-01

    A slightly unstable plasma with only one or a few linear modes unstable is considered. Nonlinear saturation at small amplitudes has been treated by time-asymptotic analysis which is a generalization of the methods of Bogolyubov and co-workers. In this paper the method is applied to instability in a collisionless plasma governed by the vlasov equation. The bump-on-tail instability is considered for a one-dimensional plasma

  13. Application of the adjoint optimisation of shock control bump for ONERA-M6 wing

    Science.gov (United States)

    Nejati, A.; Mazaheri, K.

    2017-11-01

    This article is devoted to the numerical investigation of the shock wave/boundary layer interaction (SWBLI) as the main factor influencing the aerodynamic performance of transonic bumped airfoils and wings. The numerical analysis is conducted for the ONERA-M6 wing through a shock control bump (SCB) shape optimisation process using the adjoint optimisation method. SWBLI is analyzed for both clean and bumped airfoils and wings, and it is shown how the modified wave structure originating from upstream of the SCB reduces the wave drag, by improving the boundary layer velocity profile downstream of the shock wave. The numerical simulation of the turbulent viscous flow and a gradient-based adjoint algorithm are used to find the optimum location and shape of the SCB for the ONERA-M6 airfoil and wing. Two different geometrical models are introduced for the 3D SCB, one with linear variations, and another with periodic variations. Both configurations result in drag reduction and improvement in the aerodynamic efficiency, but the periodic model is more effective. Although the three-dimensional flow structure involves much more complexities, the overall results are shown to be similar to the two-dimensional case.

  14. GIANT X-RAY BUMP IN GRB 121027A: EVIDENCE FOR FALL-BACK DISK ACCRETION

    Energy Technology Data Exchange (ETDEWEB)

    Wu Xuefeng [Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Hou Shujin [Department of Astronomy and Institute of Theoretical Physics and Astrophysics, Xiamen University, Xiamen, Fujian 361005 (China); Lei Weihua, E-mail: xfwu@pmo.ac.cn, E-mail: leiwh@hust.edu.cn [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2013-04-20

    A particularly interesting discovery in observations of GRB 121027A is that of a giant X-ray bump detected by the Swift/X-Ray Telescope. The X-ray afterglow re-brightens sharply at {approx}10{sup 3} s after the trigger by more than two orders of magnitude in less than 200 s. This X-ray bump lasts for more than 10{sup 4} s. It is quite different from typical X-ray flares. In this Letter we propose a fall-back accretion model to interpret this X-ray bump within the context of the collapse of a massive star for a long-duration gamma-ray burst. The required fall-back radius of {approx}3.5 Multiplication-Sign 10{sup 10} cm and mass of {approx}0.9-2.6 M{sub Sun} imply that a significant part of the helium envelope should survive through the mass loss during the last stage of the massive progenitor of GRB 121027A.

  15. Effect of solder bump size on interfacial reactions during soldering between Pb-free solder and Cu and Ni/ Pd/ Au surface finishes

    International Nuclear Information System (INIS)

    NorAkmal, F.; Ourdjini, A.; Azmah Hanim, M.A.; Siti Aisha, I.; Chin, Y.T.

    2007-01-01

    Flip chip technology provides the ultimate in high I/ O-density and count with superior electrical performance for interconnecting electronic components. Therefore, the study of the intermetallic compounds was conducted to investigate the effect of solder bumps sizes on several surface finishes which are copper and Electroless Nickel/ Electroless Palladium/ Immersion Gold (ENEPIG) which is widely used in electronics packaging as surface finish for flip-chip application nowadays. In this research, field emission scanning electron microscopy (FESEM) analysis was conducted to analyze the morphology and composition of intermetallic compounds (IMCs) formed at the interface between the solder and UBM. The IMCs between the SAC lead-free solder with Cu surface finish after reflow were mainly (Cu, Ni) 6 Sn 5 and Cu 6 Sn 5 . While the main IMCs formed between lead-free solder on ENEPIG surface finish are (Ni, Cu) 3 Sn 4 and Ni 3 Sn 4 . The results from FESEM with energy dispersive x-ray (EDX) have revealed that isothermal aging at 150 degree Celsius has caused the thickening and coarsening of IMCs as well as changing them into more spherical shape. The thickness of the intermetallic compounds in both finishes investigated was found to be higher in solders with smaller bump size. From the experimental results, it also appears that the growth rate of IMCs is higher when soldering on copper compared to ENEPIG finish. Besides that, the results also showed that the thickness of intermetallic compounds was found to be proportional to isothermal aging duration. (author)

  16. Effects of PCB Pad Metal Finishes on the Cu-Pillar/Sn-Ag Micro Bump Joint Reliability of Chip-on-Board (COB) Assembly

    Science.gov (United States)

    Kim, Youngsoon; Lee, Seyong; Shin, Ji-won; Paik, Kyung-Wook

    2016-06-01

    While solder bumps have been used as the bump structure to form the interconnection during the last few decades, the continuing scaling down of devices has led to a change in the bump structure to Cu-pillar/Sn-Ag micro-bumps. Cu-pillar/Sn-Ag micro-bump interconnections differ from conventional solder bump interconnections in terms of their assembly processing and reliability. A thermo-compression bonding method with pre-applied b-stage non-conductive films has been adopted to form solder joints between Cu pillar/Sn-Ag micro bumps and printed circuit board vehicles, using various pad metal finishes. As a result, various interfacial inter-metallic compounds (IMCs) reactions and stress concentrations occur at the Cu pillar/Sn-Ag micro bumps joints. Therefore, it is necessary to investigate the influence of pad metal finishes on the structural reliability of fine pitch Cu pillar/Sn-Ag micro bumps flip chip packaging. In this study, four different pad surface finishes (Thin Ni ENEPIG, OSP, ENEPIG, ENIG) were evaluated in terms of their interconnection reliability by thermal cycle (T/C) test up to 2000 cycles at temperatures ranging from -55°C to 125°C and high-temperature storage test up to 1000 h at 150°C. The contact resistances of the Cu pillar/Sn-Ag micro bump showed significant differences after the T/C reliability test in the following order: thin Ni ENEPIG > OSP > ENEPIG where the thin Ni ENEPIG pad metal finish provided the best Cu pillar/Sn-Ag micro bump interconnection in terms of bump joint reliability. Various IMCs formed between the bump joint areas can account for the main failure mechanism.

  17. The 1600 Å Emission Bump in Protoplanetary Disks: A Spectral Signature of H{sub 2}O Dissociation

    Energy Technology Data Exchange (ETDEWEB)

    France, Kevin [Laboratory for Atmospheric and Space Physics, University of Colorado, 600 UCB, Boulder, CO 80309 (United States); Roueff, Evelyne; Abgrall, Hervé, E-mail: kevin.france@colorado.edu [LERMA, Observatoire de Paris, PSL Research University, CNRS, Sorbonne Universités, UPMC Univ. Paris 06, F-92190, Meudon (France)

    2017-08-01

    The FUV continuum spectrum of many accreting pre-main sequence stars, Classical T Tauri Stars (CTTSs), does not continue smoothly from the well-studied Balmer continuum emission in the NUV, suggesting that additional processes contribute to the short-wavelength emission in these objects. The most notable spectral feature in the FUV continuum of some CTTSs is a broad emission approximately centered at 1600 Å, which has been referred to as the “1600 Å Bump.” The origin of this feature remains unclear. In an effort to better understand the molecular properties of planet-forming disks and the UV spectral properties of accreting protostars, we have assembled archival FUV spectra of 37 disk-hosting systems observed by the Hubble Space Telescope -Cosmic Origins Spectrograph. Clear 1600 Å Bump emission is observed above the smooth, underlying 1100–1800 Å continuum spectrum in 19/37 Classical T Tauri disks in the HST -COS sample, with the detection rate in transition disks (8/8) being much higher than that in primordial or non-transition sources (11/29). We describe a spectral deconvolution analysis to separate the Bump (spanning 1490–1690 Å) from the underlying FUV continuum, finding an average Bump luminosity L (Bump) ≈ 7 × 10{sup 29} erg s{sup −1}. Parameterizing the Bump with a combination of Gaussian and polynomial components, we find that the 1600 Å Bump is characterized by a peak wavelength λ {sub o} = 1598.6 ± 3.3 Å, with FWHM = 35.8 ± 19.1 Å. Contrary to previous studies, we find that this feature is inconsistent with models of H{sub 2} excited by electron -impact. We show that this Bump makes up between 5%–50% of the total FUV continuum emission in the 1490–1690 Å band and emits roughly 10%–80% of the total fluorescent H{sub 2} luminosity for stars with well-defined Bump features. Energetically, this suggests that the carrier of the 1600 Å Bump emission is powered by Ly α photons. We argue that the most likely mechanism

  18. The theory of the anti-bouncer of dynamic bumping on the plough at forced oscillations of the framework

    Directory of Open Access Journals (Sweden)

    A.P. Tarverdyan

    2017-12-01

    Full Text Available In the work the problem of the use of the external revolting factors is considered which arise from fluctuation of traction resistance of between each other pair-connected yoke and the hulls of the plow, within 27÷98%, with average coefficient of unevenness 3÷5 as power source for irrevocable performance of technological process with due quality.For execution of the principal condition of support of normal operation of the conjugate casing - supports of identity of parameters of their oscillations and congestion avoidance and deviation prefir-trees of admissible amplitude in the case of accidental collision with a hindrance, on the middle of a balance the shock-absorber of dynamic shock is provided.The solution of the task of optimization of parameters of the shock-absorber is based on value of admissible maximum amplitude of oscillations of the slave housing is made in three versions: plough share edge meeting with a motionless obstacle; case meeting with a mobile obstacle; operation of the fluctuating case in non-uniform, on specific resistance, soil conditions with unevenness coefficient to δ=2,9. After the analysis of results of the theory of calculation for three options is established: rigidity, C″ springs of an udarogasitel should be calculated by option at which the difference of resistance of forward and back cases is maximum. Keywords: Plough, Framework, Oscillation, Anti-bouncer, Bumping, Dynamics

  19. Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

    Science.gov (United States)

    McRae, C. R. H.; Béjanin, J. H.; Earnest, C. T.; McConkey, T. G.; Rinehart, J. R.; Deimert, C.; Thomas, J. P.; Wasilewski, Z. R.; Mariantoni, M.

    2018-05-01

    Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing material losses are crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in a vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level state are the dominant loss mechanism at low photon number and temperature, with a loss tangent due to native indium oxide of ˜ 5 × 10 - 5 . The molecular beam epitaxial films show evidence of the formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.

  20. Neutron Imaging with Timepix Coupled Lithium Indium Diselenide

    Directory of Open Access Journals (Sweden)

    Elan Herrera

    2017-12-01

    Full Text Available The material lithium indium diselenide, a single crystal neutron sensitive semiconductor, has demonstrated its capabilities as a high resolution imaging device. The sensor was prepared with a 55 μ m pitch array of gold contacts, designed to couple with the Timepix imaging ASIC. The resulting device was tested at the High Flux Isotope Reactor, demonstrating a response to cold neutrons when enriched in 95% 6 Li. The imaging system performed a series of experiments resulting in a <200 μ m resolution limit with the Paul Scherrer Institute (PSI Siemens star mask and a feature resolution of 34 μ m with a knife-edge test. Furthermore, the system was able to resolve the University of Tennessee logo inscribed into a 3D printed 1 cm 3 plastic block. This technology marks the application of high resolution neutron imaging using a direct readout semiconductor.

  1. Thermopower of dilute alloys of indium

    International Nuclear Information System (INIS)

    Dudenhoeffer, A.W.

    1974-01-01

    An experimental investigation of a new theory of electron-diffusion thermopower is discussed. A figure of merit for this ''Nielsen--Taylor'' theory in various metals is established, and it indicates that the effect should be largest in lead, indium, thallium, and aluminum, in that order. Previous investigations have been carried out for lead and aluminum. The thermopower of indium (or any metal) changes when impurity scattering centers are introduced into it. This change in the thermopower as a function of temperature is analyzed in terms of the Nielsen--Taylor theory and in terms of the competing process known as ''phonon drag.'' Definite conclusions as to the validity of the new theory are hampered by the complex nature of this phonon drag, but the experimental data is consistent with the Nielsen--Taylor theory. (Diss. Abstr. Int., B)

  2. Radioassay process using an indium-8-hydroxyquinoline

    International Nuclear Information System (INIS)

    Goedemans, W.T.

    1981-01-01

    There is disclosed an in vivo radioassay process in which a radioactive chelate of indium and an 8-hydroxyquinoline is introduced into a warmblooded animal having an inflammatory reaction in an area in which the chelate would not accumulate to the same extent if the inflammation were not present. The chelate gathers in the inflamed area, for instance, in a body abscess and its location is determined by radio surveying the body by an external imaging technique. (author)

  3. Preparation of trialkylindium by alkylation of metallic indium

    International Nuclear Information System (INIS)

    Eremeev, I.V.; Danov, S.M.; Sakhipov, V.R.

    1995-01-01

    The investigation results on production of trialkyl indium by alkylation of metallic indium are presented. In contradistinction to the known techniques for the production of trialkyls on indium by alkylation it is suggested to separate the synthesis into two steps. At the first step indium is alkylated by alkylhalide to alkyl indium halide, and at the second alkylation is carried out using. Grignard reagent. The techniques for preparation of trimethyl- and triethylindium, developed on the bases of this scheme, are noted for good reproducibility, allow to preclude, agglomeration of indium during the synthesis, as well as to reduce the consumption coefficients, and amounts, of the introduced starting reagents, i.e. magnesium and alkylhalide. Refs. 16

  4. Thermoelectric flux effect in superconducting indium

    International Nuclear Information System (INIS)

    Van Harlingen, D.J.

    1977-01-01

    In this paper we discuss a thermoelectric effect in superconductors which provides a mechanism for studying quasiparticle relaxation and scattering processes in non-equilibrium superconductors by transport measurements. We report measurements of the thermoelecric flux effect in samples consisting of indium and lead near the In transition temperature; in this temperature range, the contribution to DELTA/sub TAU/ from the Pb is insignificant and so values of OMEGA(T) are obtained for indium. The results of our experiments may be summarized as follows: (1) we have a thermally-generated flux effect in 5 superconducting In-Pb toroidal samples, (2) experimental tests suggest that the observed effect does indeed arise from the proposed thermoelectric flux effect, (3) OMEGA(T) for indium is found to diverge as (T/sub c/ - T)/sup -3/2/ more rapidly than predicted by simple theory, (4) OMEGA(T) at T/T sub c/ = .999 is nearly 10/sup 5/ larger than initially expected, (5) OMEGA (T) roughly correlates with the magnitude of the normal state thermoelectric coefficient for our samples

  5. New indium selenite-oxalate and indium oxalate with two- and three-dimensional structures

    International Nuclear Information System (INIS)

    Cao Junjun; Li Guodong; Chen Jiesheng

    2009-01-01

    Two new indium(III) compounds with extended structures, [In 2 (SeO 3 ) 2 (C 2 O 4 )(H 2 O) 2 ].2H 2 O (I) and [NH 3 (CH 2 ) 2 NH 3 ][In(C 2 O 4 ) 2 ] 2 .5H 2 O (II), have been prepared under mild hydrothermal conditions and structurally characterized by single-crystal X-ray diffraction, thermogravimetric analysis and infrared spectroscopy. Compound I crystallizes in the triclinic system, space group P-1, with a=5.2596(11) A, b=6.8649(14) A, c=9.3289(19) A, α=101.78(3) o , β=102.03(3) o , γ=104.52(3) o , while compound II crystallizes in the orthorhombic system, space group Fdd2, with a=15.856(3) A, b=31.183(6) A, c=8.6688(17) A. In compound I, indium-selenite chains are bridged by oxalate units to form two-dimensional (2D) In 2 (SeO 3 ) 2 C 2 O 4 layers, separated by non-coordinating water molecules. In compound II, the indium atoms are connected through the oxalate units to generate a 3D open framework containing cross-linked 12- and 8-membered channels. - Graphical abstract: Two new indium(III) compounds have been hydrothermally synthesized and structurally characterized. In I, the indium-selenite chains are bridged by oxalate units to form 2D In 2 (SeO 3 ) 2 C 2 O 4 layers. In II, the indium atoms are connected through the oxalate units to generate a 3D open framework containing cross-linked 12- and 8-membered ring channels

  6. Ultraviolet photometry from the orbiting astronomical observatory. XX. The ultraviolet extinction bump

    International Nuclear Information System (INIS)

    Savage, B.D.

    1975-01-01

    Interstellar extinction curves over the wavelength region 1800--3600 A are presented for 36 stars. The stars have E (B-V) in the range 0.03 to 0.55, and are mostly confined to the brighter OB associations distributed along the plane of the Galaxy. Every extinction curve exhibits a broad extinction bump peaking near 2175 A (4.6 μ -1 ). The position of the peak and the profile of the feature appear remarkably constant among the sample of stars. With only a few exceptions, E (lambda)-3320, a measure of the strength of the feature, correlates very well with E (B-V), implying that the bump has an interstellar rather than a circumstellar origin. The observation that the bump position and shape are constant, or very nearly constant, places severe restrictions on the grain geometrical parameters if the feature is to be explained by classical scattering theory employing bulk optical constants. In fact, the restrictions are so severe that an alternate explanation seems to be required unless the dust grains that exist in widely separated regions of space and under very different physical conditions have nearly identical size and shape distributions. Three extinction curves that extend to 1100 A are also presented. These curves show the same general extinction characteristics reported earlier. The curve for 22 Sco provides another example of a star that is []physically associated with nebulosity and that also has abnormally low far-ultraviolet extinction. We have searched the extinction curves for fine structure such as abrupt slope changes or new diffuse interstellar features. Unfortunately, there is no convincing evidence for such structure over the interval 1800--3600 A. (auth)

  7. InP (Indium Phosphide): Into the future

    International Nuclear Information System (INIS)

    Brandhorst, H.W. Jr.

    1989-03-01

    Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide

  8. InP (Indium Phosphide): Into the future

    Science.gov (United States)

    Brandhorst, Henry W., Jr.

    1989-01-01

    Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

  9. A study of the kinetics and mechanisms of electrocrystallization of indium oxide on an in situ prepared metallic indium electrode

    International Nuclear Information System (INIS)

    Omanovic, S.; Metikos-Hukovic, M.

    2004-01-01

    The mechanisms and kinetics of nucleation and growth of indium oxide film on an in situ prepared metallic indium electrode was studied in a borate buffer solution of pH 10.0 using cyclic voltammetry and chroanoamperometry techniques. It was shown that the initial stage of nucleation of the oxide film includes a three-dimensional progressive nucleation process, combined with a diffusion-controlled growth of the stable indium oxide crystals. The thermodynamic data obtained indicated a strong tendency of indium to form an indium oxide film on its surface in an aqueous solution. It was found that the rate-determining step in the nucleation and growth process is the surface diffusion of electroactive species. The nucleation rate constant, and the number of nucleation active sites were calculated independently. It was shown that between 2 and 15% of sites on the indium surface act as active nucleation centers, and that each active site represents a critical nucleus

  10. Aerodynamic Drag Reduction for a Generic Truck Using Geometrically Optimized Rear Cabin Bumps

    Directory of Open Access Journals (Sweden)

    Abdellah Ait Moussa

    2015-01-01

    Full Text Available The continuous surge in gas prices has raised major concerns about vehicle fuel efficiency, and drag reduction devices offer a promising strategy. In this paper, we investigate the mechanisms by which geometrically optimized bumps, placed on the rear end of the cabin roof of a generic truck, reduce aerodynamic drag. The incorporation of these devices requires proper choices of the size, location, and overall geometry. In the following analysis we identify these factors using a novel methodology. The numerical technique combines automatic modeling of the add-ons, computational fluid dynamics and optimization using orthogonal arrays, and probabilistic restarts. Numerical results showed reduction in aerodynamic drag between 6% and 10%.

  11. Investigation of turbulent boundary layer flow over 2D bump using highly resolved large eddy simulation

    DEFF Research Database (Denmark)

    Cavar, Dalibor; Meyer, Knud Erik

    2011-01-01

    A large eddy simulation (LES) study of turbulent non-equilibrium boundary layer flow over 2 D Bump, at comparatively low Reynolds number Reh = U∞h/ν = 1950, was conducted. A well-known LES issue of obtaining and sustaining turbulent flow inside the computational domain at such low Re, is addresse...... partially confirm a close interdependency between generation and evolution of internal layers and the abrupt changes in the skin friction, previously reported in the literature. © 2011 American Society of Mechanical Engineers....

  12. Limit cycle behaviour of the bump-on-tail and ion-acoustic instability

    International Nuclear Information System (INIS)

    Janssen, P.A.E.M.; Rasmussen, J.J.

    1980-12-01

    The nonlinear dynamics of the bump-on-tail and current-driven ion-acoustic instability is considered. The eigenmodes have discrete k because of finite periodic boundary conditions. Increasing a critical parameter (the number density and the electron drift velocity respectively) above its neutral stable value by a small fractional amount Δ 2 , one mode becomes unstable. The nonlinear dynamics of the unstable mode is determined by means of the multiple time scale method. Usually, limit cycle behaviour is found. A short comparison with quasi-linear theory is given, and the results are compared with experiment. (Auth.)

  13. Planetesimal formation by an axisymmetric radial bump of the column density of the gas in a protoplanetary disk

    Science.gov (United States)

    Onishi, Isamu K.; Sekiya, Minoru

    2017-04-01

    We investigate the effect of a radial pressure bump in a protoplanetary disk on planetesimal formation. We performed the two-dimensional numerical simulation of the dynamical interaction of solid particles and gas with an initially defined pressure bump under the assumption of axisymmetry. The aim of this work is to elucidate the effects of the stellar vertical gravity that were omitted in a previous study. Our results are very different from the previous study, which omitted the vertical gravity. Because dust particles settle toward the midplane because of the vertical gravity to form a thin dust layer, the regions outside of the dust layer are scarcely affected by the back-reaction of the dust. Hence, the gas column density keeps its initial profile with a bump, and dust particles migrate toward the bump. In addition, the turbulence due to the Kelvin-Helmholtz instability caused by the difference of the azimuthal velocities between the inside and outside of the dust layer is suppressed where the radial pressure gradient is reduced by the pressure bump. The dust settling proceeds further where the turbulence is weak, and a number of dust clumps are formed. The dust density in some clumps exceeds the Roche density. Planetesimals are considered to be formed from these clumps owing to the self-gravity.[Figure not available: see fulltext.

  14. Growth and shape of indium islands on molybdenum at micro-roughened spots created by femtosecond laser pulses

    Science.gov (United States)

    Ringleb, F.; Eylers, K.; Teubner, Th.; Schramm, H.-P.; Symietz, C.; Bonse, J.; Andree, S.; Heidmann, B.; Schmid, M.; Krüger, J.; Boeck, T.

    2017-10-01

    Indium islands on molybdenum coated glass can be grown in ordered arrays by surface structuring using a femtosecond laser. The effect of varying the molybdenum coated glass substrate temperature and the indium deposition rate on island areal density, volume and geometry is investigated and evaluated in a physical vapor deposition (PVD) process. The joined impact of growth conditions and spacing of the femtosecond laser structured spots on the arrangement and morphology of indium islands is demonstrated. The results yield a deeper understanding of the island growth and its precise adjustment to industrial requirements, which is indispensable for a technological application of such structures at a high throughput, for instance as precursors for the preparation of Cu(In,Ga)Se2 micro concentrator solar cells.

  15. Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

    International Nuclear Information System (INIS)

    Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

    2008-01-01

    Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

  16. Indium antimonide nanowires arrays for promising thermoelectric converters

    Directory of Open Access Journals (Sweden)

    Gorokh G. G.

    2015-02-01

    Full Text Available The authors have theoretically substantiated the possibility to create promising thermoelectric converters based on quantum wires. The calculations have shown that the use of quantum wires with lateral dimensions smaller than quantum confinement values and high concentration and mobility of electrons, can lead to a substantial cooling of one of the contacts up to tens of degrees and to the heating of the other. The technological methods of manufacturing of indium antimonide nanowires arrays with high aspect ratio of the nanowire diameters to their length in the modified nanoporous anodic alumina matrixes were developed and tested. The microstructure and composition of the formed nanostructures were investigated. The electron microscopy allowed establishing that within each pore nanowires are formed with diameters of 35 nm and a length of 35 microns (equal to the matrix thickness. The electron probe x-ray microanalysis has shown that the atomic ratio of indium and antimony in the semiconductor nanostructures amounted to 38,26% and 61,74%, respectively. The current-voltage measurement between the upper and lower contacts of Cu/InSb/Cu structure (1 mm2 has shown that at 2.82 V negative voltage at the emitter contact, current density is 129,8 A/cм2, and the collector contact is heated up to 75 degrees during 150 sec. Thus, the experimental results confirmed the theoretical findings that the quantum wire systems can be used to create thermoelectric devices, which can be widely applied in electronics, in particular, for cooling integrated circuits (processors, thermal controlling of the electrical circuits by changing voltage value.

  17. Miniaturization of Micro-Solder Bumps and Effect of IMC on Stress Distribution

    Science.gov (United States)

    Choudhury, Soud Farhan; Ladani, Leila

    2016-07-01

    As the joints become smaller in more advanced packages and devices, intermetallic (IMCs) volume ratio increases, which significantly impacts the overall mechanical behavior of joints. The existence of only a few grains of Sn (Tin) and IMC materials results in anisotropic elastic and plastic behavior which is not detectable using conventional finite element (FE) simulation with average properties for polycrystalline material. In this study, crystal plasticity finite element (CPFE) simulation is used to model the whole joint including copper, Sn solder and Cu6Sn5 IMC material. Experimental lap-shear test results for solder joints from the literature were used to validate the models. A comparative analysis between traditional FE, CPFE and experiments was conducted. The CPFE model was able to correlate the experiments more closely compared to traditional FE analysis because of its ability to capture micro-mechanical anisotropic behavior. Further analysis was conducted to evaluate the effect of IMC thickness on stress distribution in micro-bumps using a systematic numerical experiment with IMC thickness ranging from 0% to 80%. The analysis was conducted on micro-bumps with single crystal Sn and bicrystal Sn. The overall stress distribution and shear deformation changes as the IMC thickness increases. The model with higher IMC thickness shows a stiffer shear response, and provides a higher shear yield strength.

  18. Seeing the Unseen: MIR Spectroscopic Constraints on Quasar Big Blue Bumps

    Science.gov (United States)

    Gallagher, Sarah; Hines, Dean; Leighly, Karen; Ogle, Patrick; Richards, Gordon

    2008-03-01

    The IRS on Spitzer offers an exciting opportunity for detailed, mid-infrared spectroscopy of z~2 quasars for the first time. This epoch, sampling the peak of the quasar luminosity evolution, is particularly important for understanding the nature of quasar activity in the most massive galaxies. We aim to use this powerful tool to constrain the shape and power of the far-ultraviolet through soft-X-ray ionizing continuum of luminous quasars. Though these so-called `big blue bumps' dominate the power of quasar spectral energy distributions, they are largely unobservable as a result of hydrogen opacity in the Universe. However, we can determine the properties of the big blue bump by studying emission lines from ions in the coronal line region that emit in the mid-infrared and are created by those same energetic and elusive photons. We propose deep, high quality IRS observations of 5 luminous quasars with a range of HeII emission properties to investigate the mid-infrared spectral region in depth and constrain the shape of the ionizing continuum in each quasar. In addition, these high S/N spectra will provide templates for interpreting lower resolution, lower S/N IRS spectra.

  19. Biomimetic Water-Collecting Fabric with Light-Induced Superhydrophilic Bumps.

    Science.gov (United States)

    Wang, Yuanfeng; Wang, Xiaowen; Lai, Chuilin; Hu, Huawen; Kong, Yeeyee; Fei, Bin; Xin, John H

    2016-02-10

    To develop an efficient water-collecting surface that integrates both fast water-capturing and easy drainage properties is of high current interest for addressing global water issues. In this work, a superhydrophobic surface was fabricated on cotton fabric via manipulation of both the surface roughness and surface energy. This was followed by a subsequent spray coating of TiO2 nanosol that created light-induced superhydrophilic bumps with a unique raised structure as a result of the interfacial tension of the TiO2 nanosol sprayed on the superhydrophobic fiber surface. These raised TiO2 bumps induce both a wettability gradient and a shape gradient, synergistically accelerating water coalescence and water collection. The in-depth study revealed that the quantity and the distribution of the TiO2 had a significant impact on the final water collection efficiency. This inexpensive and facilely fabricated fabric biomimicks the desert beetle's back and spider silk, which are capable of fog harvesting without additional energy consumption.

  20. Transonic buffet control research with two types of shock control bump based on RAE2822 airfoil

    Directory of Open Access Journals (Sweden)

    Yun TIAN

    2017-10-01

    Full Text Available Current research shows that the traditional shock control bump (SCB can weaken the intensity of shock and better the transonic buffet performance. The author finds that when SCB is placed downstream of the shock, it can decrease the adverse pressure gradient. This may prevent the shock foot separation bubble to merge with the trailing edge separation and finally improve the buffet performance. Based on RAE2822 airfoil, two types of SCB are designed according to the two different mechanisms. By using Reynolds-averaged Navier-Stokes (RANS and unsteady Reynolds-averaged Navier-Stokes (URANS methods to analyze the properties of RAE2822 airfoil with and without SCB, the results show that the downstream SCB can better the buffet performance under a wide range of freestream Mach number and the steady aerodynamics characteristic is similar to that of RAE2822 airfoil. The traditional SCB can only weaken the intensity of the shock under the design condition. Under the off-design conditions, the SCB does not do much to or even worsen the buffet performance. Indeed, the use of backward bump can flatten the leeward side of the airfoil, and this is similar to the mechanism that supercritical airfoil can weaken the recompression of shock wave.

  1. Ultra-fast Movies Resolve Ultra-short Pulse Laser Ablation and Bump Formation on Thin Molybdenum Films

    Science.gov (United States)

    Domke, Matthias; Rapp, Stephan; Huber, Heinz

    For the monolithic serial interconnection of CIS thin film solar cells, 470 nm molybdenum films on glass substrates must be separated galvanically. The single pulse ablation with a 660 fs laser at a wavelength of 1053 nm is investigated in a fluence regime from 0.5 to 5.0 J/cm2. At fluences above 2.0 J/cm2 bump and jet formation can be observed that could be used for creating microstructures. For the investigation of the underlying mechanisms of the laser ablation process itself as well as of the bump or jet formation, pump probe microscopy is utilized to resolve the transient ablation behavior.

  2. Selective separation of indium by iminodiacetic acid chelating resin

    International Nuclear Information System (INIS)

    Fortes, M.C.B.; Benedetto, J.S.; Martins, A.H.

    2007-01-01

    - Indium can be recovered by treating residues, flue dusts, slags, and metallic intermediates in zinc smelting. This paper investigates the adsorption characteristics of indium and iron on an iminodiacetic acid chelating resin, Amberlite R IRC748 (Rohm and Haas Co.-USA). High concentrations of iron are always present in the aqueous feed solution of indium recovery. In addition, the chemical behaviour of iron in adsorptive systems is similar to that of indium. The metal concentrations in the aqueous solution were based on typical indium sulfate leach liquor obtained from zinc hydrometallurgical processing in a Brazilian plant. The ionic adsorption experiments were carried out by the continuous column method. Amberlite R IRC748 resin had a high affinity for indium under acidic conditions. Indium ions adsorbed onto the polymeric resin were eluted with a 0.5 mol/dm 3 sulphuric acid solution passed through the resin bed in the column. 99.5% pure indium sulfate aqueous solution was obtained using the iminodiacetic acid chelating resin Amberlite R IRC748. (author)

  3. State of rare earth impurities in gallium and indium antimonides

    International Nuclear Information System (INIS)

    Evgen'ev, S.B.; Kuz'micheva, G.M.

    1990-01-01

    State of rare earth impurities in indium and gallium antimonides was studied. Results of measuring density and lattice parameter of samples in GaSb-rare earth and InSb-rare earth systems are presented. It is shown that during rare earth dissolution in indium and gallium antimonides rare earth atoms occupy interstitial positions or, at least, are displaced from lattice points

  4. Thermodynamic Considerations for a Pyrometallurgical Extraction of Indium and Silver from a Jarosite Residue

    Directory of Open Access Journals (Sweden)

    Stefan Steinlechner

    2018-05-01

    Full Text Available Indium and silver are technologically important, critical metals, and in the majority of cases, they are extracted as a by-product of another carrier metal. The importance of indium has seen recent growth, and for technological reasons, these metals can be found in industrial residues from primary zinc production, such as the iron precipitate—jarosite. To secure the supply of such metals in Europe, and with the idea of a circular economy and the sustainable use of raw materials, the recycling of such industrial residues is coming into focus. Due to the low value of jarosite, the focus must lie simultaneously on the recovery of valuable metals and the production of high-quality products in order to pursue an economical process. The objective of this article is to give the fundamentals for the development of a successful process to extract the minor elements from roasted jarosite. As such, we use thermodynamic calculations to show the behavior of indium and silver, leading to a recommendation for the required conditions for a successful extraction process. In summary, the formation of chlorine compounds shows high potential to meet the challenge of simultaneously recovering these metals together with zinc at the lowest possible energy input.

  5. Soldering-induced Cu diffusion and intermetallic compound formation between Ni/Cu under bump metallization and SnPb flip-chip solder bumps

    Science.gov (United States)

    Huang, Chien-Sheng; Jang, Guh-Yaw; Duh, Jenq-Gong

    2004-04-01

    Nickel-based under bump metallization (UBM) has been widely used as a diffusion barrier to prevent the rapid reaction between the Cu conductor and Sn-based solders. In this study, joints with and without solder after heat treatments were employed to evaluate the diffusion behavior of Cu in the 63Sn-37Pb/Ni/Cu/Ti/Si3N4/Si multilayer structure. The atomic flux of Cu diffused through Ni was evaluated from the concentration profiles of Cu in solder joints. During reflow, the atomic flux of Cu was on the order of 1015-1016 atoms/cm2s. However, in the assembly without solder, no Cu was detected on the surface of Ni even after ten cycles of reflow. The diffusion behavior of Cu during heat treatments was studied, and the soldering-process-induced Cu diffusion through Ni metallization was characterized. In addition, the effect of Cu content in the solder near the solder/intermetallic compound (IMC) interface on interfacial reactions between the solder and the Ni/Cu UBM was also discussed. It is evident that the (Cu,Ni)6Sn5 IMC might form as the concentration of Cu in the Sn-Cu-Ni alloy exceeds 0.6 wt.%.

  6. Fabrication, structure and mechanical properties of indium nanopillars

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Gyuhyon; Kim, Ju-Young; Budiman, Arief Suriadi; Tamura, Nobumichi; Kunz, Martin; Chen, Kai; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

    2010-01-01

    Solid and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars was characterized by scanning micro-X-ray diffraction, which shows that the indium pillars were annealed at room temperature with very few dislocations remaining in the samples. The mechanical properties of the solid pillars were characterized using a uniaxial microcompression technique, which demonstrated that the engineering yield stress is {approx}9 times greater than bulk and is {approx}1/28 of the indium shear modulus, suggesting that the attained stresses are close to theoretical strength. Microcompression of hollow indium nanopillars showed evidence of brittle fracture. This may suggest that the failure mode for one of the most ductile metals can become brittle when the feature size is sufficiently small.

  7. The reminiscence bump without memories: The distribution of imagined word-cued and important autobiographical memories in a hypothetical 70-year-old

    DEFF Research Database (Denmark)

    Koppel, Jonathan; Berntsen, Dorthe

    2016-01-01

    The reminiscence bump is the disproportionate number of autobiographical memories dating from adolescence and early adulthood. It has often been ascribed to a consolidation of the mature self in the period covered by the bump. Here we stripped away factors relating to the characteristics of autob...

  8. Small lead and indium inclusions in aluminium

    International Nuclear Information System (INIS)

    Johnson, E.; Hjemsted, K.; Schmidt, B.; Bourdelle, K.K.; Johansen, A.; Andersen, H.H.; Sarholt-Kristensen, L.

    1992-01-01

    This paper reports implantation of lead or indium into aluminum results in spontaneous phase separation and formation of lead or indium precipitates. The precipitates grow in topotactical alignment with the matrix, giving TEM images characterized by moire fringes. The size and density of the precipitates increase with increasing fluence until coalescence begins to occur. Implantation at elevated temperatures lead to formation of large precipitates with well developed facets. This is particularly significant for implantation above the bulk melting point of the implanted species. Melting and solidification have been followed by in-situ TEM heating and cooling experiments. Superheating up to ∼50 K above the bulk melting point has been observed, and the largest inclusions melt first. Melting is associated with only partial loss of facetting of the largest inclusion. Initial growth of the inclusions occurs by trapping of atoms retained in supersaturated solution. Further growth occurs by coalescence of neighboring inclusion in the liquid phase. Solidification is accompanied by a strong undercooling ∼30 K below the bulk melting point, where the smallest inclusions solidify first. Solidification is characterized by spontaneous restoration of the facets and the topotactical alignment

  9. Indium-111 platelet scintigraphy in carotid disease

    International Nuclear Information System (INIS)

    Branchereau, A.; Bernard, P.J.; Ciosi, G.; Bazan, M.; de Laforte, C.; Elias, A.; Bouvier, J.L.

    1988-01-01

    Forty-five patients (35 men, 10 women) undergoing carotid surgery had Indium-111 platelet scintigraphy as part of their preoperative work-up. Imaging was performed within three hours after injection of the Indium-111. A second series of views was obtained 24 hours later and repeated at 24 hour intervals for two days. Of 54 scintigrams, 22 were positive and 32 negative. Positive results were defined as a twofold or more increase in local activity on a visualized carotid after 24 hours. The sensitivity of the method was 41%, intraoperatively, and the specificity, 100%. The low sensitivity places this method behind sonography and duplex-scanning for screening patients for surgery. We believe that indications for platelet scintigraphy are limited to: 1. Repeated transient ischemic attacks in the same territory with minimal lesions on arteriography and non-homogeneous plaque on duplex scan; 2. Symptomatic patients being treated medically as a possible argument for surgery; 3. Determining therapeutic policy for patients having experienced a transient ischemic attack with a coexisting intracardiac thrombus

  10. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

    International Nuclear Information System (INIS)

    Zheng Yanbin; Li Guang; Wang Wenlong; Li Xiuchang; Jiang Zhigang

    2012-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs. (plasma technology)

  11. Temporal distribution of autobiographical memory: uncovering the reminiscence bump in Japanese young and middle-aged adults

    NARCIS (Netherlands)

    Kawasaki, Y.; Janssen, S.M.J.; Inoue, T.

    2011-01-01

    The reminiscence bump is the effect that people recall more personal events from their teenage period than from adjacent lifetime periods. The effect is generally found in studies that divide the results of participants, who were at least 40 years old, into age bins of 10 years. In this study, the

  12. Design and Experimental Development of a Pneumatic Stiffness Adjustable Foot System for Biped Robots Adaptable to Bumps on the Ground

    Directory of Open Access Journals (Sweden)

    Xizhe Zang

    2017-09-01

    Full Text Available Walking on rough terrains still remains a challenge that needs to be addressed for biped robots because the unevenness on the ground can easily disrupt the walking stability. This paper proposes a novel foot system with passively adjustable stiffness for biped robots which is adaptable to small-sized bumps on the ground. The robotic foot is developed by attaching eight pneumatic variable stiffness units to the sole separately and symmetrically. Each variable stiffness unit mainly consists of a pneumatic bladder and a mechanical reversing valve. When walking on rough ground, the pneumatic bladders in contact with bumps are compressed, and the corresponding reversing valves are triggered to expel out the air, enabling the pneumatic bladders to adapt to the bumps with low stiffness; while the other pneumatic bladders remain rigid and maintain stable contact with the ground, providing support to the biped robot. The performances of the proposed foot system, including the variable stiffness mechanism, the adaptability on the bumps of different heights, and the application on a biped robot prototype are demonstrated by various experiments.

  13. Misuse of speed-bumps on two-lane main rural roads. A generalized practice in Venezuela

    Energy Technology Data Exchange (ETDEWEB)

    Calderas Volcanes, R.J.; Moreno Gonzalez, E.G.

    2016-07-01

    Settlements of uncontrolled population on side of road in Venezuela originate the excessive use of traffic speed reducers to mitigate accidents. Misuse of these speed control devices generate problem of functionality in the two-lane main rural roads which requires to be studied to demonstrate its effect on the capacity and level of service. Although other factors may occur (i.e, environmental problems and health), the disproportionate use of speed-bumps worsens circulation quality by increase of travel time as most sensitive parameter. Where this effect not can be reversed it should be made efforts to mitigate speed using another traffic-calming device. The studied stretches are selected according to particular characteristics such as: urban settlement, isolated speed-bump and its installation in series, including case without speed-bumps which guarantees the proper contrast. Video cameras to detect the travel time of vehicles are used in each road section, it allow the measures of other parameters. The travel time distribution with or without speed-bumps and probability distribution that characterizes vehicle movement in each stretch allows the simulation and modeling with the ARENA software. Travel time allows obtain the speed which, together with the volume of traffic, determines the level of service according to the Highway Capacity Manual criterion. The economic cost of substitute measures versus travel time is evaluated and may be useful in decision-making or implementation of better policies by transport governmental institutions. (Author)

  14. CO2laser-induced bump formation and growth on polystyrene for multi-depth soft lithography molds

    KAUST Repository

    Li, Huawei; Fan, Yiqiang; Conchouso Gonzalez, David; Foulds, Ian G.

    2012-01-01

    result from the net volume gain of the laser heat-affected zone on the PS rather than from a deposition process, and the expansion of the heat-affected zone on PS was verified by measuring the hardness change using nanoindentation. The bumps have a much

  15. Thermal bump removal of a crystal monochromator by designing an optimal shape

    Energy Technology Data Exchange (ETDEWEB)

    Micha, Jean-Sébastien, E-mail: micha@esrf.fr [CRG-IF BM32 Beamline, ESRF, 6 rue J. Horowitz, BP 220, 38043 Grenoble (France); UMR SPrAM 5819, CEA-Grenoble/INAC/SPrAM, 17 avenue des Martyrs, 38054 Grenoble Cedex 9 (France); Geaymond, Olivier [CRG-IF BM32 Beamline, ESRF, 6 rue J. Horowitz, BP 220, 38043 Grenoble (France); Institut Néel, CNRS, 25 avenue des Martyrs, 38054 Grenoble Cedex 9 (France); Rieutord, Francois [CRG-IF BM32 Beamline, ESRF, 6 rue J. Horowitz, BP 220, 38043 Grenoble (France); CEA-Grenoble/INAC/NRS, 17 avenue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2013-05-11

    Thermal bump arising at illuminated area of a water cooled monochromator crystal can be considerably reduced by designing an appropriate shape. Temperature and deformation have been simulated by finite element analysis (FEA) computations as a function of few geometrical parameters describing the shape of the crystal. As a result, a new crystal shape has been found which optimizes the throughput of a double crystals monochromator (DCM). Performances of the initial rectangular crystal and the new designed crystal predicted by FEA-based calculations and measured during experimental tests on a synchrotron beamline are reported. General design principles to overcome heat load issues and the objective function using the slope errors derived from FEA results are detailed. Current and foreseen performances at higher load are presented. Finally, advantages and limits of this simple-to-design and cheap solution are discussed.

  16. IRON OPACITY BUMP CHANGES THE STABILITY AND STRUCTURE OF ACCRETION DISKS IN ACTIVE GALACTIC NUCLEI

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Yan-Fei [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Davis, Shane W. [Department of Astronomy, University of Virginia, P.O. Box 400325, Charlottesville, VA 22904-4325 (United States); Stone, James M. [Department of Astrophysical Sciences, Princeton University, Princeton, NJ 08544 (United States)

    2016-08-10

    Accretion disks around supermassive black holes have regions where the Rosseland mean opacity can be larger than the electron scattering opacity due to the large number of bound–bound transitions in iron. We study the effects of this iron opacity “bump” on the thermal stability and vertical structure of radiation-pressure-dominated accretion disks, utilizing three-dimensional radiation magnetohydrodynamic (MHD) simulations in the local shearing box approximation. The simulations self-consistently calculate the heating due to MHD turbulence caused by magneto-rotational instability and radiative cooling by using the radiative transfer module based on a variable Eddington tensor in Athena. For a 5 × 10{sup 8} solar mass black hole with ∼3% of the Eddington luminosity, a model including the iron opacity bump maintains its structure for more than 10 thermal times without showing significant signs of thermal runaway. In contrast, if only electron scattering and free–free opacity are included as in the standard thin disk model, the disk collapses on the thermal timescale. The difference is caused by a combination of (1) an anti-correlation between the total optical depth and the midplane pressure, and (2) enhanced vertical advective energy transport. These results suggest that the iron opacity bump may have a strong impact on the stability and structure of active galactic nucleus (AGN) accretion disks, and may contribute to a dependence of AGN properties on metallicity. Since this opacity is relevant primarily in UV emitting regions of the flow, it may help to explain discrepancies between observation and theory that are unique to AGNs.

  17. Cross-validation and Peeling Strategies for Survival Bump Hunting using Recursive Peeling Methods

    Science.gov (United States)

    Dazard, Jean-Eudes; Choe, Michael; LeBlanc, Michael; Rao, J. Sunil

    2015-01-01

    We introduce a framework to build a survival/risk bump hunting model with a censored time-to-event response. Our Survival Bump Hunting (SBH) method is based on a recursive peeling procedure that uses a specific survival peeling criterion derived from non/semi-parametric statistics such as the hazards-ratio, the log-rank test or the Nelson--Aalen estimator. To optimize the tuning parameter of the model and validate it, we introduce an objective function based on survival or prediction-error statistics, such as the log-rank test and the concordance error rate. We also describe two alternative cross-validation techniques adapted to the joint task of decision-rule making by recursive peeling and survival estimation. Numerical analyses show the importance of replicated cross-validation and the differences between criteria and techniques in both low and high-dimensional settings. Although several non-parametric survival models exist, none addresses the problem of directly identifying local extrema. We show how SBH efficiently estimates extreme survival/risk subgroups unlike other models. This provides an insight into the behavior of commonly used models and suggests alternatives to be adopted in practice. Finally, our SBH framework was applied to a clinical dataset. In it, we identified subsets of patients characterized by clinical and demographic covariates with a distinct extreme survival outcome, for which tailored medical interventions could be made. An R package PRIMsrc (Patient Rule Induction Method in Survival, Regression and Classification settings) is available on CRAN (Comprehensive R Archive Network) and GitHub. PMID:27034730

  18. The effect of intermetallic compound morphology on Cu diffusion in Sn-Ag and Sn-Pb solder bump on the Ni/Cu Under-bump metallization

    Science.gov (United States)

    Jang, Guh-Yaw; Duh, Jenq-Gong

    2005-01-01

    The eutectic Sn-Ag solder alloy is one of the candidates for the Pb-free solder, and Sn-Pb solder alloys are still widely used in today’s electronic packages. In this tudy, the interfacial reaction in the eutectic Sn-Ag and Sn-Pb solder joints was investigated with an assembly of a solder/Ni/Cu/Ti/Si3N4/Si multilayer structures. In the Sn-3.5Ag solder joints reflowed at 260°C, only the (Ni1-x,Cux)3Sn4 intermetallic compound (IMC) formed at the solder/Ni interface. For the Sn-37Pb solder reflowed at 225°C for one to ten cycles, only the (Ni1-x,Cux)3Sn4 IMC formed between the solder and the Ni/Cu under-bump metallization (UBM). Nevertheless, the (Cu1-y,Niy)6Sn5 IMC was observed in joints reflowed at 245°C after five cycles and at 265°C after three cycles. With the aid of microstructure evolution, quantitative analysis, and elemental distribution between the solder and Ni/Cu UBM, it was revealed that Cu content in the solder near the solder/IMC interface played an important role in the formation of the (Cu1-y,Niy)6Sn5 IMC. In addition, the diffusion behavior of Cu in eutectic Sn-Ag and Sn-Pb solders with the Ni/Cu UBM were probed and discussed. The atomic flux of Cu diffused through Ni was evaluated by detailed quantitative analysis in an electron probe microanalyzer (EPMA). During reflow, the atomic flux of Cu was on the order of 1016-1017 atoms/cm2sec in both the eutectic Sn-Ag and Sn-Pb systems.

  19. Mn-implanted, polycrystalline indium tin oxide and indium oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

    2009-01-01

    Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

  20. Concerted Electrodeposition and Alloying of Antimony on Indium Electrodes for Selective Formation of Crystalline Indium Antimonide.

    Science.gov (United States)

    Fahrenkrug, Eli; Rafson, Jessica; Lancaster, Mitchell; Maldonado, Stephen

    2017-09-19

    The direct preparation of crystalline indium antimonide (InSb) by the electrodeposition of antimony (Sb) onto indium (In) working electrodes has been demonstrated. When Sb is electrodeposited from dilute aqueous electrolytes containing dissolved Sb 2 O 3 , an alloying reaction is possible between Sb and In if any surface oxide films are first thoroughly removed from the electrode. The presented Raman spectra detail the interplay between the formation of crystalline InSb and the accumulation of Sb as either amorphous or crystalline aggregates on the electrode surface as a function of time, temperature, potential, and electrolyte composition. Electron and optical microscopies confirm that under a range of conditions, the preparation of a uniform and phase-pure InSb film is possible. The cumulative results highlight this methodology as a simple yet potent strategy for the synthesis of intermetallic compounds of interest.

  1. Bump evolution driven by the x-ray ablation Richtmyer-Meshkov effect in plastic inertial confinement fusion Ablators

    Directory of Open Access Journals (Sweden)

    Loomis Eric

    2013-11-01

    Full Text Available Growth of hydrodynamic instabilities at the interfaces of inertial confinement fusion capsules (ICF due to ablator and fuel non-uniformities are a primary concern for the ICF program. Recently, observed jetting and parasitic mix into the fuel were attributed to isolated defects on the outer surface of the capsule. Strategies for mitigation of these defects exist, however, they require reduced uncertainties in Equation of State (EOS models prior to invoking them. In light of this, we have begun a campaign to measure the growth of isolated defects (bumps due to x-ray ablation Richtmyer-Meshkov in plastic ablators to validate these models. Experiments used hohlraums with radiation temperatures near 70 eV driven by 15 beams from the Omega laser (Laboratory for Laser Energetics, University of Rochester, NY, which sent a ∼1.25Mbar shock into a planar CH target placed over one laser entrance hole. Targets consisted of 2-D arrays of quasi-gaussian bumps (10 microns tall, 34 microns FWHM deposited on the surface facing into the hohlraum. On-axis radiography with a saran (Cl Heα − 2.76keV backlighter was used to measure bump evolution prior to shock breakout. Shock speed measurements were also performed to determine target conditions. Simulations using the LEOS 5310 and SESAME 7592 models required the simulated laser power be turned down to 80 and 88%, respectively to match observed shock speeds. Both LEOS 5310 and SESAME 7592 simulations agreed with measured bump areal densities out to 6 ns where ablative RM oscillations were observed in previous laser-driven experiments, but did not occur in the x-ray driven case. The QEOS model, conversely, over predicted shock speeds and under predicted areal density in the bump.

  2. Spectrophotometric determination of indium with chromazurol S and dimethyllaurylbenzylammonium bromide

    International Nuclear Information System (INIS)

    Kwapulinska, G.; Buhl, F.

    1988-01-01

    The ternary system: indium-chromazurol S (CHAS)-dimethyllaurylbenzylammonium bromide (ST) was applied for determination of microgramme amounts of indium. The addition of ST enhances the sensitivity of the method; at λ max =625 nm the molar absorptivity of In-CHAS-ST complex equals 1.74 x 10 5 . The system obeyes the Lambert-Beer law in the range of indium concentration from 0.04 to 0.48 ppm. The maximal absorbance was obtained at pH 6. The complex is formed immediately and is stable during 2 hours. 3 figs., 10 refs. (author)

  3. Optical properties of indium nitride films

    International Nuclear Information System (INIS)

    Tyagaj, V.A.; Evstigneev, A.M.; Krasiko, A.N.; Andreeva, A.F.; Malakhov, V.Ya.

    1977-01-01

    Reflection and transmission spectra of heavily doped indium nitride are studied at lambda=0.5-5 μm. Dispersion of the refractive index near the plasma resonance frequency, h.f. dielectric constant (epsilonsub(infinity)=9.3), and extinction coefficient near the transmission maximum of films have been determined from the analysis of interference pattern. The reflection spectrum exhibits maximum in the infrared range and optical effective mass is found through its position (msub(opt)*=0.11msub(0)). Free carrier absorption coefficient is shown to vary according to the law K approximately lambdasup(2.9+-0.1) which is characteristic of electron scattering by charged impurities. The analysis of absorption spectra near the threshold of interband transitions has lead to the conclusion that free carriers are localized in the lateral extremum of conduction band (or out of the center of the Brillouin zone), therefore the Burstein-Moss effect is absent

  4. Band structure dynamics in indium wires

    Science.gov (United States)

    Chávez-Cervantes, M.; Krause, R.; Aeschlimann, S.; Gierz, I.

    2018-05-01

    One-dimensional indium wires grown on Si(111) substrates, which are metallic at high temperatures, become insulating below ˜100 K due to the formation of a charge density wave (CDW). The physics of this transition is not conventional and involves a multiband Peierls instability with strong interband coupling. This CDW ground state is readily destroyed with femtosecond laser pulses resulting in a light-induced insulator-to-metal phase transition. The current understanding of this transition remains incomplete, requiring measurements of the transient electronic structure to complement previous investigations of the lattice dynamics. Time- and angle-resolved photoemission spectroscopy with extreme ultraviolet radiation is applied to this end. We find that the transition from the insulating to the metallic band structure occurs within ˜660 fs, which is a fraction of the amplitude mode period. The long lifetime of the transient state (>100 ps) is attributed to trapping in a metastable state in accordance with previous work.

  5. Indium antimonide based HEMT for RF applications

    International Nuclear Information System (INIS)

    Subash, T. D.; Gnanasekaran, T.

    2014-01-01

    We report on an indium antimonide high electron mobility transistor with record cut-off frequency characteristics. For high frequency response it is important to minimize parasitic resistance and capacitance to improve short-channel effects. For analog applications adequate pinch-off behavior is demonstrated. For proper device scaling we need high electron mobility and high electron density. Toward this end, the device design features and simulation are carried out by the Synopsys TCAD tool. A 30 nm InSb HEMT exhibits an excellent cut-off frequency of 586 GHz. To the knowledge of the authors, the obtained cut-off frequency is the highest ever reported in any FET on any material system. (semiconductor materials)

  6. Studies on preparation and characterization of indium doped zinc ...

    Indian Academy of Sciences (India)

    Unknown

    The preparation of indium doped zinc oxide films is discussed. ... XRD studies have shown a change in preferential orientation from (002) to .... at grain boundaries in the form of In(OH)3, hindering the .... Angular substrate to nozzle distance.

  7. Indium-111 granulocyte scintigraphy in inflammatory bowel disease

    International Nuclear Information System (INIS)

    Devillers, A.; Moisan, A.; Heresbach, D.; Darnault, P.; Bretagne, J.F.

    1996-01-01

    The present paper reports our experience since 1963 concerning 111-indium labeled autologous granulocytes scanning in the assessment of inflammatory bowel diseases and in the assessment of activity in Crohn's disease and ulcerative colitis. (authors). 94 refs., 3 figs

  8. Spectral analysis of the fifth spectrum of indium: In V

    International Nuclear Information System (INIS)

    Swapnil; Tauheed, A.

    2016-01-01

    The fifth spectrum of indium (In V) has been investigated in the grazing and normal incidence wavelength regions. In"4"+ is a Rh-like ion with the ground configuration 4p"64d"9 and first excited configurations of the type 4p"64d"8nℓ (n≥4). The theoretical predications for this ion were made by Cowan's quasi-relativistic Hartree–Fock code with superposition of configurations involving 4p"64d"8(5p+6p+7p+4f+5f+6f), 4p"54d"1"0, 4p"64d"75s(5p+4f) for the odd parity matrix and 4p"64d"8 (5s+6s+7s+5d+6d), 4p"64d"7(5s"2+5p"2) for the even parity system. The spectra used for this work were recorded on 10.7 m grazing and normal incidence spectrographs at the National Institute of Standards and Technology, Gaithersburg, Maryland (USA) and also on a 3-m normal incidence vacuum spectrograph at Antigonish (Canada). The sources used were a sliding spark and a triggered spark respectively. Two hundred and thirty two energy levels based on the identification of 873 spectral lines have been established, forty six being new. Least squares fitted parametric calculations were used to interpret the observed level structure. The energy levels were optimized using a level optimization computer program (LOPT). Our wavelength accuracy for sharp and unblended lines is estimated to be within ±0.005 Å for λ below 400 Å and ±0.006 Å up to 1200 Å. - Highlights: • Indium spectra were recorded on both grazing and normal incidence spectrographs. • Calculations were made with Cowan's quasi-relativistic Hartree–Fock code. • New atomic transitions of In V were identified with newly found energy levels. • Uncertainties and Ritz wavelengths of all observed transitions were calculated. • Weighted transition probabilities (gA) were calculated.

  9. Amperometric titration of indium with edta solution in propanol

    International Nuclear Information System (INIS)

    Gevorgyan, A.M.; Talipov, Sh.T.; Khadeev, V.A.; Kostylev, V.S.; Khadeeva, L.A.

    1980-01-01

    Optimum conditions have been chosen for titration of indium with EDTA solution in anhydrous propanol and its mixtures with some aprotic solvents using amperometric and point detection. A procedure is suggested of determining indium microcontents in the presence of large amounts of other elements. The procedure is based on its extraction preseparation followed by direct titration in the extract with a standard EDTA solution [ru

  10. Template synthesis of indium nanowires using anodic aluminum oxide membranes.

    Science.gov (United States)

    Chen, Feng; Kitai, Adrian H

    2008-09-01

    Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

  11. An advanced case of indium lung disease with progressive emphysema.

    Science.gov (United States)

    Nakano, Makiko; Tanaka, Akiyo; Hirata, Miyuki; Kumazoe, Hiroyuki; Wakamatsu, Kentaro; Kamada, Dan; Omae, Kazuyuki

    2016-09-30

    To report the occurrence of an advanced case of indium lung disease with severely progressive emphysema in an indium-exposed worker. A healthy 42-year-old male smoker was employed to primarily grind indium-tin oxide (ITO) target plates, exposing him to indium for 9 years (1998-2008). In 2004, an epidemiological study was conducted on indium-exposed workers at the factory in which he worked. The subject's serum indium concentration (In-S) was 99.7 μg/l, while his serum Krebs von den Lungen-6 level was 2,350 U/ml. Pulmonary function tests showed forced vital capacity (FVC) of 4.17 l (91.5% of the JRS predicted value), forced expiratory volume in 1 s (FEV 1 ) of 3.19 l (80.8% of predicted), and an FEV 1 -to-FVC ratio of 76.5%. A high-resolution chest computed tomography (HRCT) scan showed mild interlobular septal thickening and mild emphysematous changes. In 2008, he was transferred from the ITO grinding workplace to an inspection work section, where indium concentrations in total dusts had a range of 0.001-0.002 mg/m 3 . In 2009, the subject's In-S had increased to 132.1 μg/l, and pulmonary function tests revealed obstructive changes. In addition, HRCT scan showed clear evidence of progressive lung destruction with accompanying severe centrilobular emphysema and interlobular septal thickening in both lung fields. The subject's condition gradually worsened, and in 2015, he was registered with the Japan Organ Transplant Network for lung transplantation (LTx). Heavy indium exposure is a risk factor for emphysema, which can lead to a severity level that requires LTx as the final therapeutic option.

  12. Photoluminescence of monovalent indium centres in phosphate glass

    OpenAIRE

    Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

    2015-01-01

    Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL ...

  13. Study on indium leaching from mechanically activated hard zinc residue

    Directory of Open Access Journals (Sweden)

    Yao J.H.

    2011-01-01

    Full Text Available In this study, changes in physicochemical properties and leachability of indium from mechanically activated hard zinc residue by planetary mill were investigated. The results showed that mechanical activation increased specific surface area, reaction activity of hard zinc residue, and decreased its particle size, which had a positive effect on indium extraction from hard zinc residue in hydrochloric acid solution. Kinetics of indium leaching from unmilled and activated hard zinc residue were also investigated, respectively. It was found that temperature had an obvious effect on indium leaching rate. Two different kinetic models corresponding to reactions which are diffusion controlled, [1-(1- x1/3]2=kt and (1-2x/3-(1-x2/3=kt were used to describe the kinetics of indium leaching from unmilled sample and activated sample, respectively. Their activation energies were determined to be 17.89 kJ/mol (umilled and 11.65 kJ/mol (activated within the temperature range of 30°C to 90°C, which is characteristic for a diffusion controlled process. The values of activation energy demonstrated that the leaching reaction of indium became less sensitive to temperature after hard zinc residue mechanically activated by planetary mill.

  14. Indium-111 octreotide uptake in the surgical scar

    Energy Technology Data Exchange (ETDEWEB)

    Degirmenci, B.; Bekis, R.; Durak, H.; Derebeck, E. [Dokuz Eylul Univ., Izmir (Turkey). Dept. of Nuclear Medicine; Sen, M. [Dokuz Eylul Univ., Izmir (Turkey). Dept. of Radiation Oncology

    1999-07-01

    Indium-111 octreotide uptake has been reported in various somatostatin receptor positive tumors, granulomas and autoimmune diseases in which activated leucocytes may play a role, subcutaneous cavernous hemangioma and angiofibroma. We present Indium-111 octreotide uptake in a surgical abdominal scar tissue 1.5 to 6 months after surgery in a patient who had been treated for recurrent carcinoid tumor in the rectosigmoid junction. Indium-111 octreotide uptake in a surgical scar may be related to the binding to somatostatin receptors in the activated lymphocytes and fibroblasts that is previously reported. (orig.) [German] In verschiedenen Somatostatinrezeptor-positiven Tumoren, Granulomen, bei Autoimmunerkrankungen, in denen aktivierte Leukozyten eine Rolle spielen, subcutanen kavernoesen Hammangiomen und Angiofibromen wurde ueber die Anreicherung von Indium-111-Oktreotid berichtet. Wir berichten ueber die Anreicherung von Indium-111-Oktreotid in einer chirurgischen Narbe ueber dem Abdomen nach 1,5 und 6 Monaten bei einem Patienten mit einem Rezidiv-Karzinoid im rektosigmoidalen Uebergang. Die Anreicherung von Indium-111-Oktreotid in chirurgischen Narbengewebe koennte in Zusammenhang stehen mit einer Bindung an Somatostationrezeptoren in aktivierten Lymphozyten und Fibroblasten, ueber die schon berichtet wurde. (orig.)

  15. Maximal loads acting on legs of powered roof support unit in longwalls with bumping hazards

    Institute of Scientific and Technical Information of China (English)

    StanislawSzweda

    2001-01-01

    In the article the results of measurements of the resultant force in the legs of a powered roof support unit, caused by a dynamic interaction bf the rock mass, are discussed. The measurements have been taken in the Iongwalls mined with a roof fall, characterized by the highest degree of bumping hazard. It has been stated that the maximal force in the legs Fro, recorded during a dynamic interaction of the rock mass, is proportional to the initial static force in the legs Fst.p Therefore a need for a careful selection of the initial load of the powered roof support, according to the local mining and geological conditions, results from such a statement. Setting the legs with the supporting load exceeding the indispensable value for keeping the direct roof solids in balance, deteriorating the operational parameters of a Iongwall system also has a disadvantageous influence on the value of the force in the legs and the rate of its increase, caused by a dynamic interaction of the rock mass. A correct selection of the initial load causes a decrease in the intensity of a dynamic interaction of the rock mass on powered roof supports, which also has an advanta igeous influence on their life, Simultaneously with the measurements of the resultant force in the legs, the vertical acceleration of the canopy was also recorded. It has enabled to prove that the external dynamic forces may act on the unit both from the roof as well as from the floor. The changes of the force in the legs caused by dynamic phenomena intrinsically created in the roof and changes of the force in the legs caused by blasting explosives in the roof of the working, have been analyzed separately. It has been stated that an increase in the loads of legs, caused by intrinsic phenomena is significantly higher than a force increase in the legs caused by blasting. It means that powered roof supports, to be operated in the workings, where the bumping hazard occurs, will also transmit the loads acting on a unit

  16. Upscaling of Indium Tin Oxide (ITO)-Free Polymer Solar Cells

    DEFF Research Database (Denmark)

    Angmo, Dechan

    Polymer solar cells (PSCs) aim to produce clean energy that is cost-competitive to energy produced by fossil fuel-based conventional energy sources. From an environmental perspective, PSCs already compares favorably to other solar cell technologies in terms of fewer emissions of greenhouse gases......, represents majority of the share of cost and energy footprint in terms of materials and processing in a conventional PSC module. Furthermore, the scarcity of indium is feared to create bottleneck in the dawning PSC industry and its brittle nature is an obstacle for fast processing of PSCs on flexible...

  17. DX centers in indium aluminum arsenide heterostructures

    Science.gov (United States)

    Sari, Huseyin

    DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model

  18. High-order integral equation methods for problems of scattering by bumps and cavities on half-planes.

    Science.gov (United States)

    Pérez-Arancibia, Carlos; Bruno, Oscar P

    2014-08-01

    This paper presents high-order integral equation methods for the evaluation of electromagnetic wave scattering by dielectric bumps and dielectric cavities on perfectly conducting or dielectric half-planes. In detail, the algorithms introduced in this paper apply to eight classical scattering problems, namely, scattering by a dielectric bump on a perfectly conducting or a dielectric half-plane, and scattering by a filled, overfilled, or void dielectric cavity on a perfectly conducting or a dielectric half-plane. In all cases field representations based on single-layer potentials for appropriately chosen Green functions are used. The numerical far fields and near fields exhibit excellent convergence as discretizations are refined-even at and around points where singular fields and infinite currents exist.

  19. How metallic is the binding state of indium hosted by excess-metal chalcogenides in ore deposits?

    Science.gov (United States)

    Ondina Figueiredo, Maria; Pena Silva, Teresa; Oliveira, Daniel; Rosa, Diogo

    2010-05-01

    Discovered in 1863, indium is nowadays a strategic scarce metal used both in classical technologic fields (like low melting-temperature alloys and solders) and in innovative nano-technologies to produce "high-tech devices" by means of new materials, namely liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and the recently introduced transparent flexible thin-films manufactured with ionic amorphous oxide semiconductors (IAOS). Indium is a typical chalcophile element, seldom forming specific minerals and occurring mainly dispersed within polymetallic sulphides, particularly with excess metal ions [1]. The average content of indium in the Earth's crust is very low but a further increase in its demand is still expected in the next years, thus focusing a special interest in uncovering new exploitation sites through promising polymetallic sulphide ores - e.g., the Iberian Pyrite Belt (IPB) [2] - and in improving recycling technologies. Indium recovery stands mostly on zinc extraction from sphalerite, the natural cubic sulphide which is the prototype of so-called "tetrahedral sulphides" where metal ions fill half of the available tetrahedral sites within the cubic closest packing of sulphur anions where the double of unfilled interstices are available for further in-filling. It is worth remarking that such packing array is particularly suitable for accommodating polymetallic cations by filling closely located interstitial sites [3] as happens in excess-metal tetrahedral sulphides - e.g. bornite, ideally Cu5FeS4, recognized as an In-carrying mineral [4]. Studying the tendency towards In-In interactions able of leading to the formation of polycations would efficiently contribute to understand indium crystal chemistry and the metal binding state in natural chalcogenides. Accordingly, an X-ray absorption near-edge spectroscopy (XANES) study at In L3-edge was undertaken using the instrumental set-up of ID21 beamline at the ESRF (European Synchrotron

  20. NOAA TIFF Image - 50m Backscatter, Charleston Bump - Deep Coral Priority Areas - NOAA Ship Thomas Jefferson - (2007), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the backscatter intensity of the Charleston Bump off of the South Atlantic Bight,...

  1. NOAA TIFF Image - 50m Multibeam Bathymetry, Charleston Bump - Deep Coral Priority Areas - Little Hales - (2003), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

  2. NOAA TIFF Image - 30m Multibeam Bathymetry, Charleston Bump - Deep Coral Priority Areas - Nancy Foster - (2006), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

  3. NOAA TIFF Image - 30m Multibeam Bathymetry, Charleston Bump - Deep Coral Priority Areas - Thomas Jefferson - (2007), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

  4. NOAA TIFF Image - 30m Slope, Charleston Bump - Deep Coral Priority Areas - R/V Maurice Ewing - (1997), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the backscatter intensity of the Charleston Bump off of the South Atlantic Bight,...

  5. NOAA TIFF Image - 30m Backscatter, Charleston Bump - Deep Coral Priority Areas - NOAA Ship Thomas Jefferson - (2007), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the backscatter intensity of the Charleston Bump off of the South Atlantic Bight,...

  6. NOAA TIFF Image - 30m Rugosity, Charleston Bump - Deep Coral Priority Areas - R/V Maurice Ewing - (1997), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the backscatter intensity of the Charleston Bump off of the South Atlantic Bight,...

  7. NOAA TIFF Image - 30m Rugosity, Charleston Bump - Deep Coral Priority Areas - R/V Maurice Ewing - (1997), UTM 17N NAD83

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains a unified GeoTiff with 30x30 meter cell size representing the bathymetry of the Charleston Bump off of the South Atlantic Bight, derived from...

  8. Work function of oxygen exposed lead and lead/indium alloy films

    International Nuclear Information System (INIS)

    Gundlach, K.H.; Hellemann, H.P.; Hoelzl, J.

    1982-01-01

    The effect of indium in superconducting tunnel junctions with lead/indium alloy base electrodes is investigated by measuring the vacuum work function of lead, indium, and lead/indium alloy films. It is found that the anomalous decrease of the work function of lead upon exposure to oxygen, explained by the penetration of oxygen into the inner surface of the lead film, is reversed into a slight increase in work function when some indium is added to the lead. This result indicates that the addition of indium provides a protection by suppressing the penetration of oxygen (and probably other gases) into the interior of the thin film

  9. GRB 110530A: Peculiar Broad Bump and Delayed Plateau in Early Optical Afterglows

    Science.gov (United States)

    Zhong, Shu-Qing; Xin, Li-Ping; Liang, En-Wei; Wei, Jian-Yan; Urata, Yuji; Huang, Kui-Yun; Qiu, Yu-Lei; Deng, Can-Min; Wang, Yuan-Zhu; Deng, Jin-Song

    2016-11-01

    We report our very early optical observations of GRB 110530A and investigate its jet properties together with its X-ray afterglow data. A peculiar broad onset bump followed by a plateau is observed in its early R band afterglow light curve. The optical data in the other bands and the X-ray data are well consistent with the temporal feature of the R band light curve. Our joint spectral fits of the optical and X-ray data show that they are in the same regime, with a photon index of ∼1.70. The optical and X-ray afterglow light curves are well fitted with the standard external shock model by considering a delayed energy injection component. Based on our modeling results, we find that the radiative efficiency of the gamma-ray burst jet is ∼ 1 % and the magnetization parameter of the afterglow jet is \\lt 0.04 with a derived extremely low {ε }B (the ratio of shock energy to the magnetic field) of (1.64+/- 0.25)× {10}-6. These results indicate that the jet may be matter dominated. A discussion on delayed energy injection from the accretion of the late fall-back material of its pre-supernova star is also presented.

  10. A Two Species Bump-On-Tail Model With Relaxation for Energetic Particle Driven Modes

    Science.gov (United States)

    Aslanyan, V.; Porkolab, M.; Sharapov, S. E.; Spong, D. A.

    2017-10-01

    Energetic particle driven Alfvén Eigenmodes (AEs) observed in present day experiments exhibit various nonlinear behaviours varying from steady state amplitude at a fixed frequency to bursting amplitudes and sweeping frequency. Using the appropriate action-angle variables, the problem of resonant wave-particle interaction becomes effectively one-dimensional. Previously, a simple one-dimensional Bump-On-Tail (BOT) model has proven to be one of the most effective in describing characteristic nonlinear near-threshold wave evolution scenarios. In particular, dynamical friction causes bursting mode evolution, while diffusive relaxation may give steady-state, periodic or chaotic mode evolution. BOT has now been extended to include two populations of fast particles, with one dominated by dynamical friction at the resonance and the other by diffusion; the relative size of the populations determines the temporal evolution of the resulting wave. This suggests an explanation for recent observations on the TJ-II stellarator, where a transition between steady state and bursting occured as the magnetic configuration varied. The two species model is then applied to burning plasma with drag-dominated alpha particles and diffusion-dominated ICRH accelerated minority ions. This work was supported by the US DoE and the RCUK Energy Programme [Grant Number EP/P012450/1].

  11. Does recall of a past music event invoke a reminiscence bump in young adults?

    Science.gov (United States)

    Schubert, Emery

    2016-08-01

    Many studies of the reminiscence bump (RB) in music invoke memories from different autobiographical times by using stimulus specific prompts (SSPs). This study investigated the utility of a non-SSP paradigm to determine whether the RB would emerge when participants were asked to recall a single memorable musical event from "a time long ago". The presence of a RB in response to music has not been obtained in such a manner for younger participants. Eighty-eight 20-22 year olds reported music episodes that peaked when their autobiographical age was 13-14 years. Self-selected stimuli included a range of musical styles, including classical and non-Western pop forms, such as J-pop and K-pop, as well as generational pop music, such as the Beatles. However, most participants reported pop/rock music that was contemporaneous with encoding age, providing support for the utility of published SSP paradigms using pop music. Implications for and limitations of SSP paradigms are discussed. Participants were also asked to relate the selected musical piece to current musical tastes. Most participants liked the music that they selected, with many continuing to like the music, but most also reported a general broadening of their taste, consistent with developmental literature on open-earedness.

  12. Effect of surfactant on electrodeposited Ni-P layer as an under bump metallization

    International Nuclear Information System (INIS)

    Lin, Yung-Chi; Duh, Jenq-Gong

    2007-01-01

    In the microelectronic industry, the nickel plating has been used as the under bump metallization (UBM). The electroplated process was demonstrated to be a favorable alternative approach to produce the Ni-P layer as UBM. In this study, the role of sodium dodecylsulfate (SDS) addition in electrodeposition was investigated. The variations on surface morphology and surface roughness in the SDS-added process of electroplated Ni-P were revealed with both field emission scanning electronic microscope and atomic force microscope. The influence of SDS addition process in wettability of several commercial solder pastes, including Sn-37Pb, Sn-3.5Ag, and Sn-3.0Ag-0.5Cu, on electroplated Ni-P with various phosphorous contents was evaluated. The surface morphology and the surface roughness of Ni-P layer were affected by SDS addition. It was demonstrated that modified surface morphology and surface roughness acted to enhance the wettability of electroplated Ni-P. In addition, the interfacial reactions between Sn-3.0Ag-0.5Cu and electroplated Ni-P UBM with SDS addition during deposition was also probed and discussed

  13. Geodesic acoustic mode driven by energetic particles with bump-on-tail distribution

    Science.gov (United States)

    Ren, Haijun; Wang, Hao

    2018-04-01

    Energetic-particle-driven geodesic acoustic mode (EGAM) is analytically investigated by adopting the bump-on-tail distribution for energetic particles (EPs), which is created by the fact that the charge exchange time (τcx ) is sufficiently shorter than the slowing down time (τsl ). The dispersion relation is derived in the use of gyro-kinetic equations. Due to the finite ratio of the critical energy and the initial energy of EPs, defined as τc , the dispersion relation is numerically evaluated and the effect of finite τc is examined. Following relative simulation and experimental work, we specifically considered two cases: τsl/τcx = 3.4 and τsl/τcx = 20.4 . The pitch angle is shown to significantly enhance the growth rate and meanwhile, the real frequency is dramatically decreased with increasing pitch angle. The excitation of high-frequency EGAM is found, and this is consistent with both the experiment and the simulation. The number density effect of energetic particles, represented by \

  14. Nanoscratch characterization of indium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Lian, Derming [Chin-Yi Univ. of Technology, Taichung, Taiwan (China). Dept. of Mechanical Engineering

    2014-01-15

    In this study we used RF plasma-assisted molecular beam epitaxy for the epitaxial growth of single-crystalline indium nitride (InN) thin films on aluminum nitride buffer layers/Si (111) substrates. We then used scratch techniques to study the influence of the c-axis orientation of the InN films and the beam interactions on the tribological performance of these samples. When grown at 440, 470, and 500 C, the coefficients of friction were 0.18, 0.22, and 0.26, respectively, under a normal force (F{sub n}) of 2000 {mu}N; 0.19, 0.23, and 0.27, respectively, under a value of Fn of 4000 {mu}N; and 0.21, 0.24, and 0.28, respectively, under a value of F{sub n} of 6000 {mu}N. These measured values increased slightly upon increasing the growth temperature because of the resulting smaller sizes of the apertures and/or pores in the inner films. The sliding resistance of the ploughed area was observed. The contact sliding line became increasingly noticeable upon increasing the value of F{sub n}; the plot of the friction with respect to the penetration depth revealed a significant relation in its adhesion properties presentation. (orig.)

  15. Fabrication challenges for indium phosphide microsystems

    International Nuclear Information System (INIS)

    Siwak, N P; Fan, X Z; Ghodssi, R

    2015-01-01

    From the inception of III–V microsystems, monolithically integrated device designs have been the motivating drive for this field, bringing together the utility of single-chip microsystems and conventional fabrication techniques. Indium phosphide (InP) has a particular advantage of having a direct bandgap within the low loss telecommunication wavelength (1550 nm) range, able to support passive waveguiding and optical amplification, detection, and generation depending on the exact alloy of In, P, As, Ga, or Al materials. Utilizing epitaxy, one can envision the growth of a substrate that contains all of the components needed to establish a single-chip optical microsystem, containing detectors, sources, waveguides, and mechanical structures. A monolithic InP MEMS system has, to our knowledge, yet to be realized due to the significant difficulties encountered when fabricating the integrated devices. In this paper we present our own research and consolidate findings from other research groups across the world to give deeper insight into the practical aspects of InP monolithic microsystem development: epitaxial growth of InP-based alloys, etching techniques, common MEMS structures realized in InP, and future applications. We pay special attention to shedding light on considerations that must be taken when designing and fabricating a monolithic InP MEMS device. (topical review)

  16. Indium-111 leukocyte imaging in appendicitis

    International Nuclear Information System (INIS)

    Navarro, D.A.; Weber, P.M.; Kang, I.Y.; dos Remedios, L.V.; Jasko, I.A.; Sawicki, J.E.

    1987-01-01

    Indium- 111 -labeled leukocyte scintigraphy was applied to the diagnosis of acute appendicitis. Thirty-two patients observed in the hospital for possible appendicitis were prospectively studied. Scanning was done 2 hr after radiopharmaceutical injection. Thirteen scans were positive for acute appendicitis, and all but one were confirmed at laparotomy. In addition, two cases of colitis and two cases of peritonitis were detected. Of 15 negative studies, 11 had a benign course. Four patients with negative studies had laparotomy; two were found to have appendicitis and two had a normal appendix. Of 14 proven cases of appendicitis, 12 scans were positive for appendicitis with one false-positive scan, providing a sensitivity of 86%. Specificity was 93%: all negative cases except one had negative scans. Overall accuracy was 91% (29 of 32), comparing favorably with the accepted false-positive laparotomy rate of 25%. Use of In- 111 -labeled leukocyte scintigraphy serves to reduce the false-positive laparotomy rate and to shorten the clinical observation time in patients with acute appendicitis

  17. Synthesis and photophysical properties of indium(III) phthalocyanine derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Özceşmeci, İbrahim, E-mail: ozcesmecii@itu.edu.tr [Department of Chemistry, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey); Gelir, Ali [Department of Physics, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey); Gül, Ahmet [Department of Chemistry, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey)

    2014-03-15

    Three chloroindium(III) phthalocyanine derivatives bearing four aromatic (naphthalene or pyrene) or aliphatic (hexylthio) groups were prepared from corresponding phthalonitrile compounds. The indium(III) phthalocyanine derivatives were characterized with elemental analyses, mass, proton nuclear magnetic resonance ({sup 1}H NMR), Fourier transform infrared spectroscopy (FT-IR) and ultraviolet–visible spectroscopy (UV–vis) techniques. Quantum yields and the energy transfer from the substituents to phthalocyanine core were examined. No energy transfer was observed for 5. The energy transfer efficiency from pyrene units to indium phthalocyanine core was calculated as 0.27 for 6. Quantum yields of all samples were very small due to heavy atom effect of indium atom in the core. It was also observed that upon binding of pyrene and naphthalene units to indium phthalocyanine as substituents, the quantum yields of indium phthalocyanine parts of 5 and 6 decreased. -- Highlights: • Three chloroindium(III) phthalocyanines were prepared and characterized. • Aggregation properties of these compounds were investigated. • The energy transfer efficiency was examined. • Quantum yield of these systems were calculated.

  18. Indium-granulocyte scanning in the painful prosthetic joint

    International Nuclear Information System (INIS)

    Pring, D.J.; Henderson, R.G.; Keshavarzian, A.; Rivett, A.G.; Krausz, T.; Coombs, R.R.; Lavender, J.P.

    1986-01-01

    The value of indium-111-labeled granulocyte scanning to determine the presence of infection was assessed in 50 prosthetic joints (41 of which were painful) in 40 patients. Granulocytes were obtained from the patients' blood and labeled in plasma with indium 111 tropolonate. Abnormal accumulation of indium 111 in the region of the prosthesis was noted. Proven infection occurred in 11 prostheses, and all of the infections were detected by indium-111-labeled granulocyte scanning. Nineteen were not infected (including nine asymptomatic controls) and only two produced false-positive scans. This represents a specificity of 89.5%, sensitivity of 100%, and overall accuracy of 93.2%. These results compare favorably with plain radiography. There was no radiologic evidence of infection in three of the infected prostheses, and 10 of the noninfected prostheses had some radiologic features that suggested sepsis. We conclude that indium-granulocyte scanning can reliably detect or exclude infection in painful prosthetic joints and should prove useful in clinical management

  19. Method for forming indium oxide/n-silicon heterojunction solar cells

    Science.gov (United States)

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  20. Maximal loads acting on legs of powered roof support unit in longwalls with bumping hazards

    Institute of Scientific and Technical Information of China (English)

    Stanislaw Szweda

    2001-01-01

    In the article the results of measurements of the resultant force in th e legs of a powered roof support unit, caused by a dynamic interaction of the ro ck mass, are discussed. The measurements have been taken in the longwalls mined with a roof fall, characterized by the highest degree of bumping hazard. It has been stated that the maximal force in the legs Fm, recorded during a dynam ic interaction of the rock mass, is proportional to the initial static force in the legs Fst,p. Th erefore a need for a careful selection of the initial load of the powered roof s upport, according to the local mining and geological conditions, results from su ch a statement. Setting the legs with the supporting load exceeding the indispen sable value for keeping the direct roof solids in balance, deteriorating the ope rational parameters of a longwall system also has a disadvantageous influence on the value of the force in the legs and the rate of its increase, caused by a dy namic interaction of the rock mass. A correct selection of the initial load caus es a decrease in the intensity of a dynamic interaction of the rock mass on powe red roof supports, which also has an advantageous influence on their life.   Simultaneously with the measurements of the resultant force in the legs, the vertical acceleration of the canopy was also recorded. It has enabled to prove that the exte rnal dynamic forces may act on the unit both from the roof as well as from the f loor. The changes of the force in the legs caused by dynamic phenomena intrinsic ally created in the roof and changes of the force in the legs caused by blasting explosives in the roof of the working, have been analyzed separately. It has been stated that an increase in the loads of legs, caused by intrinsi c phenomena is significantly higher than a force increase in the legs caused by blasting. It means that powered roof supports, to be operated in the workings, w here the bumping hazard occurs, will also transmit the loads

  1. TEM EDS analysis of epitaxially-grown self-assembled indium islands

    Directory of Open Access Journals (Sweden)

    Jasmine Sears

    2017-05-01

    Full Text Available Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM Energy Dispersive Spectroscopy (EDS. Several sizes of islands are examined, with larger islands exhibiting high (>94% average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters.

  2. Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride

    Directory of Open Access Journals (Sweden)

    Rajesh Biswal

    2014-07-01

    Full Text Available The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In thin films, with electrical resistivity as low as 3.42 × 10−3 Ω·cm and high optical transmittance, in the visible range, of 50%–70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002 to (101 planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.

  3. Influence of nitrogen on magnetic properties of indium oxide

    Science.gov (United States)

    Ashok, Vishal Dev; De, S. K.

    2013-07-01

    Magnetic properties of indium oxide (In2O3) prepared by the decomposition of indium nitrate/indium hydroxide in the presence of ammonium chloride (NH4Cl) has been investigated. Structural and optical characterizations confirm that nitrogen is incorporated into In2O3. Magnetization has been convoluted to individual diamagnetic paramagnetic and ferromagnetic contributions with varying concentration of NH4Cl. Spin wave with diverging thermal exponent dominates in both field cool and zero field cool magnetizations. Uniaxial anisotropy plays an important role in magnetization as a function of magnetic field at higher concentration of NH4Cl. Avrami analysis indicates the absence of pinning effect in the magnetization process. Ferromagnetism has been interpreted in terms of local moments induced by anion dopant and strong hybridization with host cation.

  4. Influence of nitrogen on magnetic properties of indium oxide

    International Nuclear Information System (INIS)

    Ashok, Vishal Dev; De, S K

    2013-01-01

    Magnetic properties of indium oxide (In 2 O 3 ) prepared by the decomposition of indium nitrate/indium hydroxide in the presence of ammonium chloride (NH 4 Cl) has been investigated. Structural and optical characterizations confirm that nitrogen is incorporated into In 2 O 3 . Magnetization has been convoluted to individual diamagnetic paramagnetic and ferromagnetic contributions with varying concentration of NH 4 Cl. Spin wave with diverging thermal exponent dominates in both field cool and zero field cool magnetizations. Uniaxial anisotropy plays an important role in magnetization as a function of magnetic field at higher concentration of NH 4 Cl. Avrami analysis indicates the absence of pinning effect in the magnetization process. Ferromagnetism has been interpreted in terms of local moments induced by anion dopant and strong hybridization with host cation. (paper)

  5. Indium oxide inverse opal films synthesized by structure replication method

    Science.gov (United States)

    Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

    2016-04-01

    We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

  6. Thermal expansion and volumetric changes during indium phosphide melting

    International Nuclear Information System (INIS)

    Glazov, V.M.; Davletov, K.; Nashel'skij, A.Ya.; Mamedov, M.M.

    1977-01-01

    The results of the measurements of a thermal expansion were summed up at various temperatures as a diagram in coordinates (Δ 1/1) approximately F(t). It was shown that an appreciable deviation of the relationship (Δ1/1) approximately f(t) from the linear law corresponded to a temperature of 500-550 deg C. It was noted that the said deviation was related to an appreciable thermal decomposition of indium phosphide as temperature increased. The strength of the inter-atomic bond of indium phosphide was calculated. Investigated were the volumetric changes of indium phosphide on melting. The resultant data were analyzed with the aid of the Clausius-Clapeyron equation

  7. Properties of Polydisperse Tin-doped Dysprosium and Indium Oxides

    Directory of Open Access Journals (Sweden)

    Malinovskaya Tatyana

    2017-01-01

    Full Text Available The results of investigations of the complex permittivity, diffuse-reflectance, and characteristics of crystal lattices of tin-doped indium and dysprosium oxides are presented. Using the methods of spectroscopy and X-ray diffraction analysis, it is shown that doping of indium oxide with tin results in a significant increase of the components of the indium oxide complex permittivity and an appearance of the plasma resonance in its diffuse-reflectance spectra. This indicates the appearance of charge carriers with the concentration of more than 1021 cm−3 in the materials. On the other hand, doping of the dysprosium oxide with the same amount of tin has no effect on its optical and electromagnetic properties.

  8. Recalibration of indium foil for personnel screening in criticality accidents.

    Science.gov (United States)

    Takada, C; Tsujimura, N; Mikami, S

    2011-03-01

    At the Nuclear Fuel Cycle Engineering Laboratories of the Japan Atomic Energy Agency (JAEA), small pieces of indium foil incorporated into personal dosemeters have been used for personnel screening in criticality accidents. Irradiation tests of the badges were performed using the SILENE reactor to verify the calibration of the indium activation that had been made in the 1980s and to recalibrate them for simulated criticalities that would be the most likely to occur in the solution process line. In addition, Monte Carlo calculations of the indium activation using the badge model were also made to complement the spectral dependence. The results lead to a screening level of 15 kcpm being determined that corresponds to a total dose of 0.25 Gy, which is also applicable in posterior-anterior exposure. The recalibration based on the latest study will provide a sounder basis for the screening procedure in the event of a criticality accident.

  9. Effect of replacement of tin doped indium oxide (ITO) by ZnO: analysis of environmental impact categories

    Science.gov (United States)

    Ziemińska-Stolarska, Aleksandra; Barecka, Magda; Zbiciński, Ireneusz

    2017-10-01

    Abundant use of natural resources is doubtlessly one of the greatest challenges of sustainable development. Process alternatives, which enable sustainable manufacturing of valuable products from more accessible resources, are consequently required. One of examples of limited resources is Indium, currently broadly used for tin doped indium oxide (ITO) for production of transparent conductive films (TCO) in electronics industry. Therefore, candidates for Indium replacement, which would offer as good performance as the industrial state-of-the-art technology based on ITO are widely studied. However, the environmental impact of new layers remains unknown. Hence, this paper studies the environmental effect of ITO replacement by zinc oxide (ZnO) by means life cycle assessment (LCA) methodology. The analysis enables to quantify the environmental impact over the entire period of life cycle of products—during manufacturing, use phase and waste generation. The analysis was based on experimental data for deposition process. Further, analysis of different impact categories was performed in order to determine specific environmental effects related to technology change. What results from the analysis, is that ZnO is a robust alternative material for ITO replacement regarding environmental load and energy efficiency of deposition process which is also crucial for sustainable TCO layer production.

  10. Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

    Science.gov (United States)

    Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

    2012-01-01

    A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

  11. Review of pulmonary toxicity of indium compounds to animals and humans

    International Nuclear Information System (INIS)

    Tanaka, Akiyo; Hirata, Miyuki; Kiyohara, Yutaka; Nakano, Makiko; Omae, Kazuyuki; Shiratani, Masaharu; Koga, Kazunori

    2010-01-01

    Due to the increased production of ITO, the potential health hazards arising from occupational exposure to this material have attracted much attention. This review consists of three parts: 1) toxic effects of indium compounds on animals, 2) toxic effects of indium compounds on humans, and 3) recommendations for preventing exposure to indium compounds in the workplace. Available data have indicated that insoluble form of indium compounds, such as ITO, indium arsenide (InAs) and indium phosphide (InP), can be toxic to animals. Furthermore, InP has demonstrated clear evidence of carcinogenic potential in long-term inhalation studies using experimental animals. As for the dangers to humans, some data are available concerning adverse health effects to workers who have been exposed to indium-containing particles. The Japan Society for Occupational Health recommended the value of 3 μg/L of indium in serum as the occupational exposure limit based on biological monitoring to preventing adverse health effects in workers resulting from occupational exposure to indium compounds. Accordingly, it is essential that much greater attention is focused on human exposure to indium compounds, and precautions against possible exposure to indium compounds are most important with regard to health management among indium-handling workers.

  12. Electronic and chemical properties of barium and indium clusters

    International Nuclear Information System (INIS)

    Onwuagba, B.N.

    1992-11-01

    The ground state electronic and chemical properties of divalent barium and trivalent indium are investigated in a self-consistent manner using the spin-polarized local density approximation in the framework of Density Functional Theory. A jellium model is adopted in the spirit of Gunnarsson and Lundqvist exchange and correlation energies and the calculated properties primarily associated with the s-p orbitals in barium and p orbitals in indium provide deepened insight towards the understanding of the mechanisms to the magic numbers in both clusters. (author). 21 refs, 5 figs

  13. Activation analysis of indium used as tracer in hydrogeology

    International Nuclear Information System (INIS)

    Stanescu, S.P.; Farcasiu, O.M.; Gaspar, E.; Spiridon, S.; Nazarov, V.M.; Frontasieva, M.V.

    1985-01-01

    About 2500 samples of 18 hydro-karstic structures from Romania have been analyzed. The water flow rates were in the range of 0.05 to 2.7 m 3 /s and transit time values were from 30 h to 200 days. The quantity of indium used for a labelling was a calculated function of the emergency flow rate and the estimated transit time and varied from 1 to 100 g. The results prove that the activation analysis of indium in water samples combined with preconcentration by coprecipitation is an useful method in hydrogeological studies

  14. Stability aspects of hydrogen-doped indium oxide

    OpenAIRE

    Jost, Gabrielle; Hamri, Alexander Nordin; Köhler, Florian; Hüpkes, Jürgen

    2015-01-01

    Transparent conductive oxides play an important role as contact layers in various opto-electronic devices such as solar cells or LEDs. Whilst crystalline materials e.g. zinc oxide (ZnO), tin oxide (Sn2O3) or tin doped indium oxide (ITO) have already been vastly investigated and applied [1] hydrogen doped indium oxide (In2O3:H) entered the scene a while ago as a new material with a superior trade-off between electrical and optical performance. In2O3:H is commonly deposited at room temperature...

  15. Discovery of the calcium, indium, tin, and platinum isotopes

    International Nuclear Information System (INIS)

    Amos, S.; Gross, J.L.; Thoennessen, M.

    2011-01-01

    Currently, twenty-four calcium, thirty-eight indium, thirty-eight tin, and thirty-nine platinum isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented. - Highlights: Documentation of the discovery of all calcium, indium, tin and platinum isotopes. → Summary of author, journal, year, place and country of discovery for each isotope. → Brief description of discovery history of each isotope.

  16. Interaction of indium trichloride with calcium carbonate in aqueous solutions

    International Nuclear Information System (INIS)

    Kochetkova, N.V.; Toptygina, G.M.; Soklakova, O.V.; Evdokimov, V.I.

    1991-01-01

    Interaction of indium trichloride with calcium carbonate in aqueous solutions was studied, using methods of potentiometry, isothermal solubility and physicochemical computer simulating. The Gibb's energy value for crystal indium trihydroxide formation was calculated on the basis of experimental data on In(OH) 3 solubility. The value obtained was used for estimating equilibrium composition of InCl 3 -HCl-CaCO 3 -CO 2 -H 2 O system at a temperature of 25 deg C and carbon dioxide partial pressure of 0.05 to 1 at

  17. Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

    International Nuclear Information System (INIS)

    Sallis, Shawn; Williams, Deborah S.; Quackenbush, Nicholas F.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.J.

    2015-01-01

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In + lone pair active electrons as the origin of the deep subgap features. No In + species are observed, only In 0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

    Energy Technology Data Exchange (ETDEWEB)

    Sallis, Shawn; Williams, Deborah S. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Quackenbush, Nicholas F.; Senger, Mikell [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States); Woicik, Joseph C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899 (United States); White, Bruce E.; Piper, Louis F.J. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States)

    2015-07-15

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In{sup +} lone pair active electrons as the origin of the deep subgap features. No In{sup +} species are observed, only In{sup 0} nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Thermal cycling reliability of Cu/SnAg double-bump flip chip assemblies for 100 μm pitch applications

    Science.gov (United States)

    Son, Ho-Young; Kim, Ilho; Lee, Soon-Bok; Jung, Gi-Jo; Park, Byung-Jin; Paik, Kyung-Wook

    2009-01-01

    A thick Cu column based double-bump flip chip structure is one of the promising alternatives for fine pitch flip chip applications. In this study, the thermal cycling (T/C) reliability of Cu/SnAg double-bump flip chip assemblies was investigated, and the failure mechanism was analyzed through the correlation of T/C test and the finite element analysis (FEA) results. After 1000 thermal cycles, T/C failures occurred at some Cu/SnAg bumps located at the edge and corner of chips. Scanning acoustic microscope analysis and scanning electron microscope observations indicated that the failure site was the Cu column/Si chip interface. It was identified by a FEA where the maximum stress concentration was located during T/C. During T/C, the Al pad between the Si chip and a Cu column bump was displaced due to thermomechanical stress. Based on the low cycle fatigue model, the accumulation of equivalent plastic strain resulted in thermal fatigue deformation of the Cu column bumps and ultimately reduced the thermal cycling lifetime. The maximum equivalent plastic strains of some bumps at the chip edge increased with an increased number of thermal cycles. However, equivalent plastic strains of the inner bumps did not increase regardless of the number of thermal cycles. In addition, the z-directional normal plastic strain ɛ22 was determined to be compressive and was a dominant component causing the plastic deformation of Cu/SnAg double bumps. As the number of thermal cycles increased, normal plastic strains in the perpendicular direction to the Si chip and shear strains were accumulated on the Cu column bumps at the chip edge at low temperature region. Thus it was found that the Al pad at the Si chip/Cu column interface underwent thermal fatigue deformation by compressive normal strain and the contact loss by displacement failure of the Al pad, the main T/C failure mode of the Cu/SnAg flip chip assembly, then occurred at the Si chip/Cu column interface shear strain deformation

  20. Indium sulfide precipitation from hydrochloric acid solutions of calcium and sodium chlorides

    International Nuclear Information System (INIS)

    Kochetkova, N.V.; Bayandina, Yu.E.; Toptygina, G.M.; Shepot'ko, A.O.

    1988-01-01

    The effect of precipitation duration, acid concentration, indium complexing with chloride ions on the process of indium sulfide chemical precipitation in hydrochloric acid solutions, precipitate composition and dispersity are studied. It is established that indium sulfide solubility increases in solutions with acid concentration exceeding 0.40-0.45 mol/l. Calcium and indium chloride addition to diluted hydrochloric solutions greatly increases the solubility of indium sulfide. The effect of calcium chloride on In 2 S 3 solubility is higher than that of sodium chloride

  1. Quantum dot infrared photodetectors based on indium phosphide

    International Nuclear Information System (INIS)

    Gebhard, T.

    2011-01-01

    The subject of this work is a systematic study of quantum dot infrared photodetectors based on indium-phosphide substrate by means of various spectroscopic and electronic measurement methods in order to understand the physical and technological processes. This enables a concise definition of strategies in order to realize next generation devices in this material system and to gain overall progress in the research field of quantum dot infrared photodetectors. The interpretation of the experimental results is supported by analytical and numerical simulations. The samples, grown by collaboration partners, were characterized using differential transmission and fast Fourier transform infrared spectroscopy, with a special emphasis on the latter one. Therefore, samples both in wedged waveguide geometry and samples with gold coated mesa structures have been processed. A large part of the discussion is dedicated to the current voltage characteristic of the devices, due to its large importance for device optimization, i.e. the reduction of the dark current plays a crucial role in the research field of high temperature infrared photon-detection. Further, results of photoluminescence measurements, performed by collaboration partners, have been used in order to attain a more complete picture of the samples' electronic band structure and in order to obtain complementary information with respect to other measurement methods applied within the experimental work and the simulation of the structures. In agreement to the simulations, a photocurrent response was observed at 6 and at 12 μm up to a temperature of 80 K, depending on the samples' design. The principle of parameter scaling was applied to the samples, in order to assign physical effects either to details in the samples' design or to technological quality aspects, i.e. the doping level and the thickness of the capping layer was varied. In addition to that a quantum well was introduced within a series of samples in order to

  2. (111)Indium Labelling of Recombinant Activated Coagulation Factor VII

    DEFF Research Database (Denmark)

    Nalla, Amarnadh; Buch, Inge; Sigvardt, Maibritt

    2012-01-01

    The aim of this study is to investigate whether (111)Indium-labelled recombinant FVIIa (rFVIIa) could be a potential radiopharmaceutical for localization of bleeding sources. DTPA-conjugated rFVIIa was radiolabelled with (111)In chloride. In vitro binding efficiency of (111)In-DTPA-rFVIIa to F1A2...

  3. Diffuse pulmonary uptake of indium-111 chloride in idiopathic myelofibrosis

    International Nuclear Information System (INIS)

    Vieras, F.; Boyd, C.M.; Mora, P.A.

    1979-01-01

    Unusual indium-111 accumulation and extramedullary hematopoiesis in the lungs of a patient with idiopathic myelofibrosis are described. The bone marrow scan taken 24 h after intravenous injection of 111 InCl 3 faithfully depicted the abnormal distribution of marrow elements as assessed histologically at autopsy, thereby supporting the usefulness of 111 InCl 3 for marrow imaging

  4. Synthesis and characterization of five-coordinated indium amidinates

    Energy Technology Data Exchange (ETDEWEB)

    Riahi, Yasaman

    2016-07-29

    The focus of this work is synthesis, characterization and exploring the reactivity of new indium amidinate compounds of the type R{sub 2}InX (R = R''NCR'NR''; R' = Ph, R'' = SiMe{sub 3}, iPr, dipp; X = Br, Cl) with the coordination number of five and R{sub 3}In (R = Me{sub 3}SiNCPhNSiMe{sub 3}) with the coordination number of six. By using amidinates as chelating ligands the electron deficiency of indium atom will be resolved. Additionally, by using different substituents the study of the different synthesized indium amidinates has become possible. The selected method for the synthesis allows the carbodiimides to react with organolithium compounds to get the corresponding lithium amidinates. Afterwards the resulting lithium amidinates take part in transmetalation reactions with InBr{sub 3} and InCl{sub 3}. The study of the reactivity of indium amidinate complexes including nucleophilic reactions as well as their reduction were also examined. Beside crystal structure analysis, nuclear magnetic resonance spectroscopy as well as elemental analysis has been applied to characterize the compounds.

  5. Electron emission from individual indium arsenide semiconductor nanowires

    NARCIS (Netherlands)

    Heeres, E.C.; Bakkers, E.P.A.M.; Roest, A.L.; Kaiser, M.A.; Oosterkamp, T.H.; Jonge, de N.

    2007-01-01

    A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve,

  6. Acid-catalyzed kinetics of indium tin oxide etching

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

    2014-08-28

    We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

  7. Highly conducting and transparent sprayed indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

    1998-03-01

    Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

  8. Indium 111 WBC scan in local and systemic fungal infections

    International Nuclear Information System (INIS)

    Haseman, M.K.; Blake, K.; McDougall, I.R.

    1984-01-01

    We describe two patients-one with a systemic fungal infection and one with a localized form-who had strikingly abnormal indium 111 leukocyte (WBC) scans. The patient with systemic disease had an abnormal WBC scan before lesions became clinically apparent

  9. Ellipsometric investigations of pyrolytically deposited thin indium oxide films

    International Nuclear Information System (INIS)

    Winkler, U.

    1980-01-01

    Ellipsometric measurements have been carried out of thin indium oxide films deposited pyrolytically on glass substrates. It was found that the roughness of the films affected the measuring results. Therefore, only after applying a two-layer model a reasonable interpretation of the measuring results became possible

  10. Current status of indium-111 labeled bleomycin for tumor detection

    International Nuclear Information System (INIS)

    Taylor, R.D.; Blahd, W.H.

    1975-01-01

    The advantages and disadvantages of 111 In-labeled bleomycin for tumor detection are briefly mentioned. Indium-111 labeled bleomycin does localize in human tumors. However, its role in tumor detection and staging as compared with 67 Ga is still somewhat controversial

  11. Indium-111 oxine labelling of white blood cells

    International Nuclear Information System (INIS)

    Lavender, J.P.; Silvester, D.J.; Goldman, J.; Hammersmith Hospital, London

    1978-01-01

    Following work done by Professor John McAfee and Mathew Thakur at the MRS Cyclotron Unit a method is available for labelling cells with indium-111 which results in a stable intracellular marker. The method uses indium-111-8 hydroxyquinoline (111In oxine) which is a lipoid soluble complex which goes across the cell membrane and results in the deposition of indium into various subcellular structures. It has been applied to various preparations of white cells, platelets and also malignant cells. Autologous granulocytes have been used to identify inflammatory lesions in 35 patients. By similar means autologous lymphocytes can also be labelled and reinfused. Lymphocytes have been shown in animals to circulate from the blood via the lymphatic system and then returning to the blood once more. The same phenomenon can be seen in man using indium labelled lymphocytes. Lymph nodes become visible at between 12 and 18 hours and recirculation of labelled cells can be shown on the blood activity curves. Certain problems arise concerning cell behaviour after labelling which appear due to irradiation of cells rather than chemical toxicity. (author)

  12. Hydrogen Production via Steam Reforming of Ethyl Alcohol over Palladium/Indium Oxide Catalyst

    Directory of Open Access Journals (Sweden)

    Tetsuo Umegaki

    2009-01-01

    Full Text Available We report the synergetic effect between palladium and indium oxide on hydrogen production in the steam reforming reaction of ethyl alcohol. The palladium/indium oxide catalyst shows higher hydrogen production rate than indium oxide and palladium. Palladium/indium oxide affords ketonization of ethyl alcohol with negligible by-product carbon monoxide, while indium oxide mainly affords dehydration of ethyl alcohol, and palladium affords decomposition of ethyl alcohol with large amount of by-product carbon monoxide. The catalytic feature of palladium/indium oxide can be ascribed to the formation of palladium-indium intermetallic component during the reaction as confirmed by X-ray diffraction and X-ray photoelectron spectroscopic measurements.

  13. Cross-current leaching of indium from end-of-life LCD panels.

    Science.gov (United States)

    Rocchetti, Laura; Amato, Alessia; Fonti, Viviana; Ubaldini, Stefano; De Michelis, Ida; Kopacek, Bernd; Vegliò, Francesco; Beolchini, Francesca

    2015-08-01

    Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2M sulfuric acid at 80°C for 10min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85-90%, and with 6 steps it was about 50-55%. Indium concentration in the leachate was about 35mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO2 (with 10 steps we assessed that the emission of about 90kg CO2-Eq. could be avoided) thanks to the recovery of indium. This new strategy represents a useful approach for secondary production of indium from waste LCD panels. Copyright © 2015 Elsevier Ltd. All rights reserved.

  14. Use of and occupational exposure to indium in the United States.

    Science.gov (United States)

    Hines, Cynthia J; Roberts, Jennifer L; Andrews, Ronnee N; Jackson, Matthew V; Deddens, James A

    2013-01-01

    Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009-2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m(3) for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH

  15. Indium nanoparticles for ultraviolet surface-enhanced Raman spectroscopy

    Science.gov (United States)

    Das, Rupali; Soni, R. K.

    2018-05-01

    Ultraviolet Surface-enhanced Raman spectroscopy (UVSERS) has emerged as an efficient molecular spectroscopy technique for ultra-sensitive and ultra-low detection of analyte concentration. The generic SERS substrates based on gold and silver nanostructures have been extensively explored for high local electric field enhancement only in visible-NIR region of the electromagnetic spectrum. The template synthesis of controlled nanoscale size metallic nanostructures supporting localized surface plasmon resonance (LSPR) in the UV region have been recently explored due to their ease of synthesis and potential applications in optoelectronic, catalysis and magnetism. Indium (In0) nanoparticles exhibit active surface plasmon resonance (SPR) in ultraviolet (UV) and deep-ultaviolet (DUV) region with optimal absorption losses. This extended accessibility makes indium a promising material for UV plasmonic, chemical sensing and more recently in UV-SERS. In this work, spherical indium nanoparticles (In NPs) were synthesized by modified polyol reduction method using NaBH4 having local surface plasmon resonance near 280 nm. The as-synthesized spherical In0 nanoparticles were then coated with thin silica shells of thickness ˜ 5nm by a modified Stober method protecting the nanoparticles from agglomeration, direct contact with the probed molecules as well as prevent oxidation of the nanoparticles. Morphological evolution of In0 nanoparticles and SiO2 coating were characterized by transmission electron microscope (TEM). An enhanced near resonant shell-isolated SERS activity from thin film of tryptophan (Tryp) molecules deposited on indium coated substrates under 325nm UV excitation was observed. Finite difference time domain (FDTD) method is employed to comprehend the experimental results and simulate the electric field contours which showed amplified electromagnetic field localized around the nanostructures. The comprehensive analysis indicates that indium is a promising alternate

  16. Plasma Treatment to Remove Carbon from Indium UV Filters

    Science.gov (United States)

    Greer, Harold F.; Nikzad, Shouleh; Beasley, Matthew; Gantner, Brennan

    2012-01-01

    The sounding rocket experiment FIRE (Far-ultraviolet Imaging Rocket Experiment) will improve the science community fs ability to image a spectral region hitherto unexplored astronomically. The imaging band of FIRE (.900 to 1,100 Angstroms) will help fill the current wavelength imaging observation hole existing from approximately equal to 620 Angstroms to the GALEX band near 1,350 Angstroms. FIRE is a single-optic prime focus telescope with a 1.75-m focal length. The bandpass of 900 to 1100 Angstroms is set by a combination of the mirror coating, the indium filter in front of the detector, and the salt coating on the front of the detector fs microchannel plates. Critical to this is the indium filter that must reduce the flux from Lymanalpha at 1,216 Angstroms by a minimum factor of 10(exp -4). The cost of this Lyman-alpha removal is that the filter is not fully transparent at the desired wavelengths of 900 to 1,100 Angstroms. Recently, in a project to improve the performance of optical and solar blind detectors, JPL developed a plasma process capable of removing carbon contamination from indium metal. In this work, a low-power, low-temperature hydrogen plasma reacts with the carbon contaminants in the indium to form methane, but leaves the indium metal surface undisturbed. This process was recently tested in a proof-of-concept experiment with a filter provided by the University of Colorado. This initial test on a test filter showed improvement in transmission from 7 to 9 percent near 900 with no process optimization applied. Further improvements in this performance were readily achieved to bring the total transmission to 12% with optimization to JPL's existing process.

  17. Expanding Medicaid Access without Expanding Medicaid: Why Did Some Nonexpansion States Continue the Primary Care Fee Bump?

    Science.gov (United States)

    Wilk, Adam S; Evans, Leigh C; Jones, David K

    2018-02-01

    Six states that have rejected the Patient Protection and Affordable Care Act's (ACA) Medicaid expansion nonetheless extended the primary care "fee bump," by which the federal government increased Medicaid fees for primary care services up to 100 percent of Medicare fees during 2013-14. We conducted semistructured interviews with leaders in five of these states, as well as in three comparison states, to examine why they would continue a provision of the ACA that moderately expands access at significant state expense while rejecting the expansion and its large federal match, focusing on relevant economic, political, and procedural factors. We found that fee bump extension proposals were more successful where they were dissociated from major national policy debates, actionable with the input of relatively few stakeholder entities, and well aligned with preexisting policy-making structures and decision trends. Republican proposals to cap or reduce federal funding for Medicaid, if enacted, would compel states to contain program costs. In this context, states' established decision-making processes for updating Medicaid fee schedules, which we elucidate in this study, may shape the future of the Medicaid program. Copyright © 2018 by Duke University Press 2018.

  18. Cross-current leaching of indium from end-of-life LCD panels

    Energy Technology Data Exchange (ETDEWEB)

    Rocchetti, Laura; Amato, Alessia; Fonti, Viviana [Department of Life and Environmental Sciences, Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy); Ubaldini, Stefano [Institute of Environmental Geology and Geoengineering IGAG, National Research Council, Via Salaria km 29300, 00015 Montelibretti, Rome (Italy); De Michelis, Ida [Department of Industrial Engineering, Information and Economy, University of L’Aquila, Via Giovanni Gronchi 18, 67100, Zona industriale di Pile, L’Aquila (Italy); Kopacek, Bernd [ISL Kopacek KG, Beckmanngasse 51, 1140 Wien (Austria); Vegliò, Francesco [Department of Industrial Engineering, Information and Economy, University of L’Aquila, Via Giovanni Gronchi 18, 67100, Zona industriale di Pile, L’Aquila (Italy); Beolchini, Francesca, E-mail: f.beolchini@univpm.it [Department of Life and Environmental Sciences, Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy)

    2015-08-15

    Graphical abstract: Display Omitted - Highlights: • End-of-life LCD panels represent a source of indium. • Several experimental conditions for indium leaching have been assessed. • Indium is completely extracted with 2 M sulfuric acid at 80 °C for 10 min. • Cross-current leaching improves indium extraction and operating costs are lowered. • Benefits to the environment come from reduction of CO{sub 2} emissions and reagents use. - Abstract: Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2 M sulfuric acid at 80 °C for 10 min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100 ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85–90%, and with 6 steps it was about 50–55%. Indium concentration in the leachate was about 35 mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO{sub 2} (with 10 steps we assessed that the emission of about 90 kg CO{sub 2}-Eq. could be avoided) thanks to the recovery of indium

  19. Evolution of end-of-range damage and transient enhanced diffusion of indium in silicon

    Science.gov (United States)

    Noda, T.

    2002-01-01

    Correlation of evolution of end-of-range (EOR) damage and transient enhanced diffusion (TED) of indium has been studied by secondary ion mass spectrometry and transmission electron microscopy. A physically based model of diffusion and defect growth is applied to the indium diffusion system. Indium implantation with 200 keV, 1×1014/cm2 through a 10 nm screen oxide into p-type Czochralski silicon wafer was performed. During postimplantation anneal at 750 °C for times ranging from 2 to 120 min, formation of dislocation loops and indium segregation into loops were observed. Simulation results of evolution of EOR defects show that there is a period that {311} defects dissolve and release free interstitials before the Ostwald ripening step of EOR dislocation loops. Our diffusion model that contains the interaction between indium and loops shows the indium pileup to the loops. Indium segregation to loops occurs at a pure growth step of loops and continues during the Ostwald ripening step. Although dislocation loops and indium segregation in the near-surface region are easily dissolved by high temperature annealing, EOR dislocation loops in the bulk region are rigid and well grown. It is considered that indium trapped by loops with a large radius is energetically stable. It is shown that modeling of the evolution of EOR defects is important for understanding indium TED.

  20. Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs

    International Nuclear Information System (INIS)

    Unno, Y.; Hanagaki, K.; Hori, R.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Kamada, S.; Yamamura, K.; Yamamoto, H.; Takashima, R.; Tojo, J.; Kono, T.; Nagai, R.; Saito, S.; Sugibayashi, K.; Hirose, M.; Jinnouchi, O.; Sato, S.; Sawai, H.; Hara, K.

    2017-01-01

    We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n + -in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

  1. Preparation of RF reactively sputtered indium-tin oxide thin films with optical properties suitable for heat mirrors

    International Nuclear Information System (INIS)

    Boyadzhiev, S; Dobrikov, G; Rassovska, M

    2008-01-01

    Technologies are discussed for preparing and characterizing indium-tin oxide (ITO) thin films with properties appropriate for usage as heat mirrors in solar thermal collectors. The samples were prepared by means of radio frequency (RF) reactive sputtering of indium-tin targets in oxygen. The technological parameters were optimized to obtain films with optimal properties for heat mirrors. The optical properties of the films were studied by visible and infra-red (IR) spectrophotometry and laser ellipsometry. The reflectance of the films in the thermal IR range was investigated by a Fourier transform infra-red (FTIR) spectrophotometer. Heating of the substrates during the sputtering and their post deposition annealing in different environments were also studied. The ultimate purpose of the present research being the development of a technological process leading to low-cost ITO thin films with high transparency in the visible and near IR (0.3-2.4 μm) and high reflection in the thermal IR range (2.5-25 μm), we investigated the correlation of the ITO thin films structural and optical properties with the technological process parameters - target composition and heat treatment

  2. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-07-07

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

  3. Quantitative STEM on indium containing group III-V semiconductor nanostructures

    International Nuclear Information System (INIS)

    Mehrtens, Thorsten

    2013-01-01

    In the framework of this thesis. a method for compositional analysis of semiconductor nanostructures is applied on technologically relevant group III-V alloys. It is based on a quantitative comparison between intensities of experimentally acquired High-Angle Annular Dark Field Scanning Tansmission Electron Microscopy (HAADF-STEM) images and simulated intensities from multislice calculations in the frozen lattice approach. The demonstrated method allows determination of specimen thickness and material composition on subnanometer scale. Since quantitative HAADF-STEM is still a very young technique, its applicability has only been proven for a few materials, yet. Thus, the main goal of this thesis is the simulation of suitable reference datasets for different ternary semiconducting alloys and to test their reliability by complementary analysis. A total of three different semiconducting materials are thereby analyzed (InGaN, InGaAs and InAlN) that have all in common that they contain indium. The main focus of this work lies on InGaN which is due to its bandgap particularly suitable for the fabrication of optoelectronic devices operating in the visible spectrum of the light. In the first part of the presented results, the quality of ultra-thin TEM-specimens prepared by techniques involving ion milling at high energies is optimized. This is done by an additional ion milling step where the impinging ions possess an energy of only 400 eV. It is found that the preparation induced amorphous surface layer that occurs during ion milling can be drastically reduced below 1 nm. The second part concentrates on results obtained on InGaN. Here, different simulations in the frozen lattice approach are carried out under certain conditions. These simulations either include or do not include thermal diffuse scattering and/or static atomic displacement to demonstrate their influence on the amount of intensity measured in the experiment. As the consideration of thermal diffuse scattering

  4. 3D Integration of MEMS and IC: Design, technology and simulations

    OpenAIRE

    Schjølberg-Henriksen, Kari

    2009-01-01

    * 3D integration: Opportunities and trends* e-CUBES: Tire pressure monitoring system (TPMS)* Package design including thermo-mechanical modeling* Technology development* Sensor packaging concept* Gold stud bump bonding* Device characterization and testing* Summary and outlook 3D Integration of MEMS and IC: Design, technology and simulations

  5. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    Science.gov (United States)

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

  6. Self-similar bumps and wiggles: Isolating the evolution of the BAO peak with power-law initial conditions

    International Nuclear Information System (INIS)

    Orban, Chris; Weinberg, David H.

    2011-01-01

    Motivated by cosmological surveys that demand accurate theoretical modeling of the baryon acoustic oscillation (BAO) feature in galaxy clustering, we analyze N-body simulations in which a BAO-like Gaussian bump modulates the linear theory correlation function ξ L (r)=(r 0 /r) n+3 of an underlying self-similar model with initial power spectrum P(k)=Ak n . These simulations test physical and analytic descriptions of BAO evolution far beyond the range of most studies, since we consider a range of underlying power spectra (n=-0.5, -1, -1.5) and evolve simulations to large effective correlation amplitudes (equivalent to σ 8 =4-12 for r bao =100h -1 Mpc). In all cases, nonlinear evolution flattens and broadens the BAO bump in ξ(r) while approximately preserving its area. This evolution resembles a diffusion process in which the bump width σ bao is the quadrature sum of the linear theory width and a length proportional to the rms relative displacement Σ pair (r bao ) of particle pairs separated by r bao . For n=-0.5 and n=-1, we find no detectable shift of the location of the BAO peak, but the peak in the n=-1.5 model shifts steadily to smaller scales, following r peak /r bao =1-1.08(r 0 /r bao ) 1.5 . The perturbation theory scheme of McDonald (2007) [P. McDonald, Phys. Rev. D 75, 043514 (2007).] and, to a lesser extent, standard 1-loop perturbation theory are fairly successful at explaining the nonlinear evolution of the Fourier power spectrum of our models. Analytic models also explain why the ξ(r) peak shifts much more for n=-1.5 than for n≥-1, though no ab initio model we have examined reproduces all of our numerical results. Simulations with L box =10r bao and L box =20r bao yield consistent results for ξ(r) at the BAO scale, provided one corrects for the integral constraint imposed by the uniform density box.

  7. Indium sulfide buffer layers deposited by dry and wet methods

    International Nuclear Information System (INIS)

    Asenjo, B.; Sanz, C.; Guillen, C.; Chaparro, A.M.; Gutierrez, M.T.; Herrero, J.

    2007-01-01

    Indium sulfide (In 2 S 3 ) thin films have been deposited on amorphous glass, glass coated by tin oxide (TCO) and crystalline silicon substrates by two different methods: modulated flux deposition (MFD) and chemical bath deposition (CBD). Composition, morphology and optical characterization have been carried out with Scanning Electron Microscopy (SEM), IR-visible-UV Spectrophotometry, X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectrometer. Different properties of the films have been obtained depending on the preparation techniques. With MFD, In 2 S 3 films present more compact and homogeneous surface than with CBD. Films deposited by CBD present also indium oxide in their composition and higher absorption edge values when deposited on glass

  8. Clinical evaluation of the platelet scintigraphy using indium-111 oxine

    International Nuclear Information System (INIS)

    Ishikawa, Nobuyoshi; Takeda, Tohoru; Nakajima, Kohtaroh; Satoh, Motohiro; Akisada, Masayoshi; Ijima, Hiroshi

    1988-01-01

    The clinical usefulness of autologous platelets labeled with Indium-111 oxine was evaluated by scintigraphy as a diagnostic procedure for the detection of various thrombotic disorders as well as in different aneurysms. The positivity was found to be satisfactory (80.0 %) in cases of aortic aneurysm while thoracic aneurysm showed comparatively poor accumulation. High positivity was also demonstrated in deep vein thrombosis. The complimentary role of this method for intracardiac thrombi to echocardiography was noted. The labeling procedure of indium-111 oxine was fairly easy to perform and the activity of labeled platelets was sustained enough to yield good results. In one case scintigraphy was performed successfully after 19 hours of angiography when a hot area of labeled platelets was seen at the puncture site. This method was therefore varified to be a sensitive and reliable method in the assessment of thrombus activity, and as it demonstrates the activity, its helpfulness in the conservative treatment of these disorders is warranted. (author)

  9. Electrical properties of indium arsenide irradiated with fast neutrons

    International Nuclear Information System (INIS)

    Kolin, N.G.; Osvenskii, V.B.; Rytova, N.S.; Yurova, E.S.

    1987-01-01

    A study was made of the influence of irradiation with fast reactor neutrons on electrical properties of indium arsenide samples with different dopant concentrations. The laws governing the formation and annealing of radiation defects in indium arsenide were found to be governed by the donor-acceptor interaction. Depending on the density of free carriers in the original crystal, irradiation could produce charged defects of predominantly donor or acceptor types. Donor defects in irradiated InAs samples were annealed practically completely, whereas a considerable fraction of residual acceptor defects was retained even after heat treatment at 900 degree C. The concentration of these residual acceptors depended on the electron density at the annealing temperature

  10. Equation of state of liquid Indium under high pressure

    Directory of Open Access Journals (Sweden)

    Huaming Li

    2015-09-01

    Full Text Available We apply an equation of state of a power law form to liquid Indium to study its thermodynamic properties under high temperature and high pressure. Molar volume of molten indium is calculated along the isothermal line at 710K within good precision as compared with the experimental data in an externally heated diamond anvil cell. Bulk modulus, thermal expansion and internal pressure are obtained for isothermal compression. Other thermodynamic properties are also calculated along the fitted high pressure melting line. While our results suggest that the power law form may be a better choice for the equation of state of liquids, these detailed predictions are yet to be confirmed by further experiment.

  11. Stopping characteristics of boron and indium ions in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Veselov, D. S., E-mail: DSVeselov@mephi.ru; Voronov, Yu. A. [National Research Nuclear University MEPhI (Russian Federation)

    2016-12-15

    The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.

  12. Formation and growth of embedded indium nanoclusters by In2+ implantation in silica

    International Nuclear Information System (INIS)

    Santhana Raman, P.; Nair, K.G.M.; Kesavamoorthy, R.; Panigrahi, B.K.; Dhara, S.; Ravichandran, V.

    2007-01-01

    Indium nanoclusters are synthesized in an amorphous silica matrix using an ion-implantation technique. Indium ions (In 2+ ) with energy of 890 keV are implanted on silica to fluences in the range of 3 x 10 16 -3 x 10 17 cm -2 . The formation of indium nanoclusters is confirmed by optical absorption spectrometry and glancing incidence X-ray diffraction studies. A low frequency Raman scattering technique is used to study the growth of embedded indium nanoclusters in the silica matrix as a function of fluence and post-implantation annealing duration. Rutherford backscattering spectrometry studies show the surface segregation of implanted indium. Photoluminescence studies indicate the formation of a small quantity of indium oxide phase in the ion-implanted samples. (orig.)

  13. Light forces on an indium atonic beam; Lichtkraefte auf einen Indiumatomstrahl

    Energy Technology Data Exchange (ETDEWEB)

    Kloeter, B.

    2007-07-01

    In this thesis it was studied, whether indium is a possible candidate for the nanostructuration respectively atomic lithography. For this known method for the generation and stabilization of the light necessary for the laser cooling had to be fitted to the special properties of indium. The spectroscopy of indium with the 451 nm and the 410 nm light yielded first hints that the formulae for the atom-light interaction for a two-level atom cannot be directly transferred to the indium atom. By means of the obtained parameters of the present experiment predictions for a possible Doppler cooling of the indium atomic beam were calculated. Furthermore the possibility for the direct deposition of indium on a substrate was studied.

  14. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Metaferia, Wondwosen; Sun, Yan-Ting, E-mail: yasun@kth.se; Lourdudoss, Sebastian [Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, KTH—Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Pietralunga, Silvia M. [CNR-Institute for Photonics and Nanotechnologies, P. Leonardo da Vinci, 32 20133 Milano (Italy); Zani, Maurizio; Tagliaferri, Alberto [Department of Physics Politecnico di Milano, P. Leonardo da Vinci, 32 20133 Milano (Italy)

    2014-07-21

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.

  15. Annealing of defects in indium antimonide after ion bombardment

    International Nuclear Information System (INIS)

    Bogatyrev, V.A.; Kachurin, G.A.

    1977-01-01

    Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

  16. Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide

    International Nuclear Information System (INIS)

    Tanaka, Akiyo

    2004-01-01

    Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles. However, available data indicate these semiconductor materials can be toxic in animals. Although acute and chronic toxicity of the lung, reproductive organs, and kidney are associated with exposure to these semiconductor materials, in particular, chronic toxicity should pay much attention owing to low solubility of these materials. Between InAs, GaAs, and AlGaAs, InAs was the most toxic material to the lung followed by GaAs and AlGaAs when given intratracheally. This was probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials, such as indium, gallium, or aluminium, and not arsenic itself. It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect. Although there is no evidence of the carcinogenicity of InAs or AlGaAs, GaAs and InP, which are semiconductor materials, showed the clear evidence of carcinogenic potential. It is necessary to pay much greater attention to the human exposure of semiconductor materials

  17. Effect of Joint Scale and Processing on the Fracture of Sn-3Ag-0.5Cu Solder Joints: Application to Micro-bumps in 3D Packages

    Science.gov (United States)

    Talebanpour, B.; Huang, Z.; Chen, Z.; Dutta, I.

    2016-01-01

    In 3-dimensional (3D) packages, a stack of dies is vertically connected to each other using through-silicon vias and very thin solder micro-bumps. The thinness of the micro-bumps results in joints with a very high volumetric proportion of intermetallic compounds (IMCs), rendering them much more brittle compared to conventional joints. Because of this, the reliability of micro-bumps, and the dependence thereof on the proportion of IMC in the joint, is of substantial concern. In this paper, the growth kinetics of IMCs in thin Sn-3Ag-0.5Cu joints attached to Cu substrates were analyzed, and empirical kinetic laws for the growth of Cu6Sn5 and Cu3Sn in thin joints were obtained. Modified compact mixed mode fracture mechanics samples, with adhesive solder joints between massive Cu substrates, having similar thickness and IMC content as actual micro-bumps, were produced. The effects of IMC proportion and strain rate on fracture toughness and mechanisms were investigated. It was found that the fracture toughness G C decreased with decreasing joint thickness ( h Joint). In addition, the fracture toughness decreased with increasing strain rate. Aging also promoted alternation of the crack path between the two joint-substrate interfaces, possibly proffering a mechanism to enhance fracture toughness.

  18. Simulation studies of plasma waves in the electron foreshock - The generation of Langmuir waves by a gentle bump-on-tail electron distribution

    Science.gov (United States)

    Dum, C. T.

    1990-01-01

    Particle simulation experiments were used to study the basic physical ingredients needed for building a global model of foreshock wave phenomena. In particular, the generation of Langmuir waves by a gentle bump-on-tail electron distribution is analyzed. It is shown that, with appropriately designed simulations experiments, quasi-linear theory can be quantitatively verified for parameters corresponding to the electron foreshock.

  19. Transient and steady state behaviour of elasto–aerodynamic air foil bearings, considering bump foil compliance and top foil inertia and flexibility: A numerical investigation

    DEFF Research Database (Denmark)

    Nielsen, Bo Bjerregaard; Santos, Ilmar F.

    2017-01-01

    utilise two types of eight-node isoparametric elements. The rotor is modelled as a rigid body without rotational inertia, i.e. as a journal. The bump foil is included via a bilinear version of the simple elastic foundation model. This paper introduces the bilinear simple elastic foundation model, which...

  20. Average formation number n-barOH of colloid-type indium hydroxide

    International Nuclear Information System (INIS)

    Stefanowicz, T.; Szent-Kirallyine Gajda, J.

    1983-01-01

    Indium perchlorate in perchloric acid solution was titrated with sodium hydroxide solution to various pH values. Indium hydroxide colloid was removed by ultracentrifugation and supernatant solution was titrated with base to neutral pH. The two-stage titration data were used to calculate the formation number of indium hydroxide colloid, which was found to equal n-bar OH = 2.8. (author)

  1. Blocking of indium incorporation by antimony in III-V-Sb nanostructures

    International Nuclear Information System (INIS)

    Sanchez, A M; Beltran, A M; Ben, T; Molina, S I; Beanland, R; Gass, M H; De la Pena, F; Walls, M; Taboada, A G; Ripalda, J M

    2010-01-01

    The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.

  2. Research on the effect of alkali roasting of copper dross on leaching rate of indium

    Science.gov (United States)

    Dafang, Liu; Fan, Xingxiang; Shi, Yifeng; Yang, Kunbin

    2017-11-01

    The byproduct copper dross produced during refining crude lead was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and fluorescence spectrometer (XRF), which showed that copper dross mainly contained lead, copper, zinc, arsenic, antimony, bismuth, sulfur and a small amount of indium and silver etc. The mineralogical phase change of oxidation roasting of copper dross by adding sodium hydroxide was analyzed with the help of XRD and SEM. The effects of water leaching, ratio of sodium hydroxide, roasting time, and roasting temperature on leaching rate of indium were investigated mainly. The experimental results showed that phase of lead metal and sulfides of lead, copper and zinc disappeared after oxidation roasting of copper dross by adding sodium hydroxide, new phase of oxides of lead, copper, zinc and sodium salt of arsenic and antimony appeared. Water leaching could remove arsenic, and acid leaching residue obtained was then leached with acid. The leaching rate of indium was higher 6.98% compared with alkali roasting of copper dross-acid leaching. It showed that removing arsenic by water leaching and acid leaching could increase the leaching rate of indium and be beneficial to reducing subsequent acid consumption of extracting indium by acid leaching. The roasting temperature had a significant effect on the leaching rate of indium, and leaching rate of indium increased with the rise of roasting temperature. When roasting temperature ranged from 450°C to 600°C, leaching rate of indium increased significantly with the rise of roasting temperature. When roasting temperature rose from 450°C to 600°C, leaching rate of indium increased by 60.29%. The amount of sodium hydroxide had an significant effect on the leaching rate of indium, and the leaching of indium increased with the increase of the amount of sodium hydroxide, and the leaching rate of indium was obviously higher than that of copper dross blank roasting and acid leaching.

  3. Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

    Science.gov (United States)

    Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

    2018-01-01

    The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

  4. Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

    Science.gov (United States)

    Jaya, T. P.; Pradyumnan, P. P.

    2017-12-01

    Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

  5. Radiochemical studies of the separation of some chloro-complexes of tin, antimony, cadmium and indium

    International Nuclear Information System (INIS)

    Ramamoorthy, N.; Mani, R.S.

    1976-01-01

    Radioisotopes of tin, antimony, cadmium and indium such as tin-113, antimony-124, antimony-125, cadmium-109, cadmium-115, indium-113m and indium-111 find extensive applications as tracers in various fields. These isotopes are produced by irradiation of targets in a reactor or a cyclotron. It is usually observed that in addition to the nuclear reactions giving rise to the desired isotopes, side reactions also take place giving rise to radionuclidic contaminants. Thus, antimony-125, indium-114m and indium-114 will be present in the cyclotron produced indium-111. The authors have studied column chromatography over hydrous zirconia for the separation of antimony from tin and indium, and cadmium from indium. These studies have thrown light on the role and behaviour of antimony-125 present as an impurity in tin-113 during the preparation of tin-113-indium-113m generators and have indicated methods for the preparation of 115 Cd-sup(115m)In generators and for separation of 111 In from proton irradiated cadmium targets. (Authors)

  6. Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

    International Nuclear Information System (INIS)

    Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre

    2011-01-01

    Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl 3 , SnCl 4 and NH 3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ∼ 40-1160 nm. After calcination at 550 o C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.

  7. The distribution of gallium, germanium and indium in conventional and non-conventional resources. Implications for global availability

    Energy Technology Data Exchange (ETDEWEB)

    Frenzel, Max

    2016-10-25

    Over the past 10 years, increased interest in the supply security of metal and mineral raw materials has resulted in the compilation of many lists of materials of particular concern. These materials are generally referred to as 'critical'. They are perceived to be both of high economic importance, as well as subject to high supply risks. Of particular relevance with respect to supply risk is the assessment of geological risk factors. However, this aspect is not considered in sufficient detail in most studies. In particular, the specific features of elements won as by-products are not adequately represented in any assessment. Yet many of these elements are often classified as critical, mostly due to their apparent importance in high-tech applications, the intransparency of their respective markets and resulting price volatility, and the concentration of their production in China. Gallium, germanium and indium are all good examples of such elements. All three are similar in many respects, and commonly have a similar rating in both the economic importance and supply risk dimensions. The aim of this work was to use these three elements as examples, and investigate whether they are truly as similar as current assessments suggest, or whether there are large underlying differences in their specific supply situations. In particular, the focus was on physical supply limitations: Since by-products can only be extracted with other main-product raw materials, their rate of extraction is limited by the extraction rate of these main products. This means that the relevant quantities for an assessment of their physical supply limitations are not reserves and/or resources, but supply potentials. The supply potential is the quantity of a given by-product which could theoretically be extracted under current market conditions (price, technology) per year if all suitable raw materials were processed accordingly. To assess the supply potentials of gallium, germanium and indium

  8. Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element

    Directory of Open Access Journals (Sweden)

    Swapnil Sourav

    2016-01-01

    Full Text Available Phase transform properties of Indium Selenide (In2Se3 based Random Access Memory (RAM have been explored in this paper. Phase change random access memory (PCRAM is an attractive solid-state nonvolatile memory that possesses potential to meet various current technology demands of memory design. Already reported PCRAM models are mainly based upon Germanium-Antimony-Tellurium (Ge2Sb2Te5 or GST materials as their prime constituents. However, PCRAM using GST material lacks some important memory attributes required for memory elements such as larger resistance margin between the highly resistive amorphous and highly conductive crystalline states in phase change materials. This paper investigates various electrical and compositional properties of the Indium Selenide (In2Se3 material and also draws comparison with its counterpart mainly focusing on phase transform properties. To achieve this goal, a SPICE model of In2Se3 based PCRAM model has been reported in this work. The reported model has been also validated to act as a memory cell by associating it with a read/write circuit proposed in this work. Simulation results demonstrate impressive retentivity and low power consumption by requiring a set pulse of 208 μA for a duration of 100 μs to set the PCRAM in crystalline state. Similarly, a reset pulse of 11.7 μA for a duration of 20 ns can set the PCRAM in amorphous state. Modeling of In2Se3 based PCRAM has been done in Verilog-A and simulation results have been extensively verified using SPICE simulator.

  9. Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

    KAUST Repository

    Elafandy, Rami T.; Bhattacharya, Pallab K.; Cha, Dong Kyu; Ng, Tien Khee; Ooi, Boon S.; Zhang, Meng

    2012-01-01

    Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature

  10. Deep Photometry of GRB 041006 Afterglow: Hypernova Bump at Redshift z = 0.716

    Science.gov (United States)

    Stanek, K. Z.; Garnavich, P. M.; Nutzman, P. A.; Hartman, J. D.; Garg, A.; Adelberger, K.; Berlind, P.; Bonanos, A. Z.; Calkins, M. L.; Challis, P.; Gaudi, B. S.; Holman, M. J.; Kirshner, R. P.; McLeod, B. A.; Osip, D.; Pimenova, T.; Reiprich, T. H.; Romanishin, W.; Spahr, T.; Tegler, S. C.; Zhao, X.

    2005-06-01

    We present deep optical photometry of the afterglow of gamma-ray burst (GRB) 041006 and its associated hypernova obtained over 65 days after detection (55 R-band epochs on 10 different nights). Our early data (tVatican Advanced Technology Telescope, the Magellan 6.5 m Baade and Clay telescopes, and the Keck II 10 m telescope.

  11. Pharmacokinetics of indium-111-labeled antimyosin monoclonal antibody in murine experimental viral myocarditis

    International Nuclear Information System (INIS)

    Yamada, T.; Matsumori, A.; Watanabe, Y.; Tamaki, N.; Yonekura, Y.; Endo, K.; Konishi, J.; Kawai, C.

    1990-01-01

    The pharmacokinetics of indium-111-labeled antimyosin monoclonal antibody Fab were investigated with use of murine experimental viral myocarditis as a model. The biodistribution of indium-111-labeled antimyosin antibody Fab on days 3, 5, 7, 14, 21 and 28 after encephalomyocarditis virus inoculation demonstrated that myocardial uptake increased significantly on days 5, 7 and 14 (maximum on day 7) in infected versus uninfected mice (p less than 0.001). In vivo kinetics in infected mice on day 7 demonstrated that the heart to blood ratio reached a maximum 48 h after the intravenous administration of indium-111-labeled antimyosin Fab, which was considered to be the optimal time for scintigraphy. The scintigraphic images obtained with indium-111-labeled antimyosin Fab demonstrated positive uptake in the cardiac lesion in infected mice. The pathologic study demonstrated that myocardial uptake correlated well with pathologic grades of myocardial necrosis. High performance liquid chromatography revealed the presence of an antigen-antibody complex in the circulation of infected mice after the injection of indium-111-labeled antimyosin Fab. This antigen bound to indium-111-labeled antimyosin Fab in the circulation might be whole myosin and this complex may decrease myocardial uptake and increase liver uptake. It is concluded that indium-111-labeled antimyosin monoclonal antibody Fab accumulates selectively in damaged heart tissue in mice with acute myocarditis and that indium-111-labeled antimyosin Fab scintigraphy may be a useful method for the visualization of acute myocarditis

  12. Indium phosphide space solar cell research: Where we are and where we are going

    Science.gov (United States)

    Jain, R. K.; Flood, D. J.; Weinberg, Irving

    1995-01-01

    Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

  13. Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

    2014-09-15

    The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

  14. Rf reactive sputtering of indium-tin-oxide films

    International Nuclear Information System (INIS)

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  15. Ternary equilibria in bismuth--indium--lead alloys

    International Nuclear Information System (INIS)

    Liao, K.C.; Johnson, D.L.; Nelson, R.C.

    1975-01-01

    The liquidus surface is characterized by three binary equilibria. One binary extends from the Pb--Bi peritectic to the Pb--In peritectic. The other two extend from In--Bi eutectics, merge at 50 at. percent Bi and 30 at. percent Pb, and end at the Bi--Pb eutectic. Based on analysis of ternary liquidus contours and vertical sections, it is suggested that solidification for high lead and very high indium alloys occurs from two-phase equilibria. Solidification from all other alloys occurs from three-phase equilibria. Four-phase solidification does not occur in this system

  16. Selectivity in extraction of copper and indium with chelate extractants

    International Nuclear Information System (INIS)

    Zivkovic, D.

    2003-01-01

    Simultaneous extraction of copper and indium with chelate extractants (LIX84 and D2E11PA) was described. Stechiometry of metal-organic complexes examined using the method of equimolar ratios resulted in CuR 2 and InR 3 forms of hydrophobic extracting species. A linear correlation was obtained between logarithm of distribution coefficients and chelate agents and pH, respectively. Selectivity is generally higher with higher concentrations of chelate agents in the organic phase, and is decreased with increase of concentration of hydrogen ions in feeding phase. (Original)

  17. Disappearance of superconductivity and critical resistance in thin indium films

    International Nuclear Information System (INIS)

    Okuma, Satoshi; Nishida, Nobuhiko

    1991-01-01

    In thin granular films composed of two-dimensionally coupled indium particles, we have studied influences of average particle sizes anti d on the superconducting transition. For films with anti d=280A and 224A, superconducting transition temperature stays almost constant with increasing the sheet resistance R n in the normal state, while for a film with anti d=140A, it decreases linearly with R n . This means that the system changes to a dirty superconductor by reducing anti d. With further increasing R n , superconductivity disappears when R n exceeds the value R c of order h/4e 2 , which seems to correlate with anti d. (orig.)

  18. Research on structure and electrical parameters of indium antimonide films

    International Nuclear Information System (INIS)

    Mukhametniyazova, A.; Konyaeva, V.F.; Sukhanov, S.; Ashirov, A.; Aleksanyan, S.N.

    1980-01-01

    Results of investigations into the effect of conditions of formation of indium antimonide films prepared by thermal vacuum spraying on their structure, phase composition and electric parameters, are presented. The method of studying the synthesized semiconductor layers on the DRON-0.5 X-ray device with CoKsub(α)-radiation is tested. The dependence of structure, phase composition and electric properties of InSb layers 1+3 μm thick sprayed on ferrite substrates on condensation temperature, is established. Hexagonal InSb modification is found

  19. Anomalous behaviour of screw dislocations in quenched indium antimonide monocrystals

    International Nuclear Information System (INIS)

    Alekseenko, V.I.; Mostovoj, V.M.

    1991-01-01

    Anomalies of screw dislocation mobility in indium antimonide single crystals quenched after annealing were detected experimentally. Taking into accout specific nature of thermal treatment an enhanced attention is paid to the technique of the experiment. It is shown that the observed peculiarities can be explained using a model of thermoactivated movement of excessive bends over stoppers at the dislocation line. Proceeding from the assumption on the nature of stoppers, the values of stopper energy barriers overcome by an excessive bend are determined on the basis of the above model of excessive bend movement

  20. Indium-111-labelled leucocytes for localisation of abscesses

    International Nuclear Information System (INIS)

    Segal, A.W.; Thakur, M.L.; Arnot, R.N.; Lavender, J.P.

    1976-01-01

    Leucocytes from eight patients who were thought to have an abscess were labelled with indium-111 and reintroduced into the circulation. The distribution of radioactivity was followed by whole-body scanning and imaging with a gamma camera. Focal accumulations of radioactivity were observed in the lesion in the three patients with abscesses, in the lungs of a boy with bacterial endocarditis, in the knee of a woman with rheumatoid arthritis, and at the site of intramuscular injections in another patient. The use of radiolabelled cells for the detection of focal pathological processes would seem to be an important addition to conventional diagnostic methods. (author)

  1. Indium-111-labelled leucocytes for localisation of abscesses

    Energy Technology Data Exchange (ETDEWEB)

    Segal, A W; Thakur, M L; Arnot, R N; Lavender, J P [Royal Postgraduate Medical School, London (UK)

    1976-11-13

    Leucocytes from eight patients who were thought to have an abscess were labelled with indium-111 and reintroduced into the circulation. The distribution of radioactivity was followed by whole-body scanning and imaging with a gamma camera. Focal accumulations of radioactivity were observed in the lesion in the three patients with abscesses, in the lungs of a boy with bacterial endocarditis, in the knee of a woman with rheumatoid arthritis, and at the site of intramuscular injections in another patient. The use of radiolabelled cells for the detection of focal pathological processes would seem to be an important addition to conventional diagnostic methods.

  2. Decomposition rates of radiopharmaceutical indium chelates in serum

    International Nuclear Information System (INIS)

    Yeh, S.M.; Meares, C.F.; Goodwin, D.A.

    1979-01-01

    The rates at which six small aminopolycarboxylate chelates of trivalent 111 In and three protein-bound chelates of 111 In deliver indium to the serum protein transferrin have been studied in sterile human serum at pH 7.3, 37 deg C. Sterically hindered chelates containing a substituent on an ethylene carbon of EDTA decompose with rates in the range 0.03 to 0.11% per day - one to two orders of magnitude slower than other chelates. Only small differences are observed between rates of decomposition for low-molecular-weight chelates and for protein-bound chelates having analogous structures. (author)

  3. Research on structure and electrical parameters of indium antimonide films

    Energy Technology Data Exchange (ETDEWEB)

    Mukhametniyazova, A; Konyaeva, V F; Sukhanov, S; Ashirov, A; Aleksanyan, S N [AN Turkmenskoj SSR, Ashkhabad. Fiziko-Tekhnicheskii Inst.

    1980-01-01

    Results of investigations into the effect of conditions of formation of indium antimonide films prepared by thermal vacuum spraying on their structure, phase composition and electric parameters, are presented. The method of studying the synthesized semiconductor layers on the DRON-0.5 X-ray device with CoKsub(..cap alpha..)-radiation is tested. The dependence of structure, phase composition and electric properties of InSb layers 1+3 ..mu..m thick sprayed on ferrite substrates on condensation temperature, is established. Hexagonal InSb modification is found.

  4. Analysis and calibration of transient enhanced diffusion for an indium impurity in a nanoscale semiconductor device

    International Nuclear Information System (INIS)

    Lee, Jun-Ha; Lee, Hoong-Joo

    2005-01-01

    We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO 2 interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-μm device characteristics, such as V th and I dsat , for which the differences between simulation and experiment less than 5 %.

  5. The effect of NaCl on room-temperature-processed indium oxide nanoparticle thin films for printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Häming, M., E-mail: Marc.Haeming@yahoo.de [Karlsruhe Institute of Technology (KIT), Institute for Photon Science and Synchrotron Radiation (IPS), D-76344 Eggenstein-Leopoldshafen (Germany); Baby, T.T. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Garlapati, S.K. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Technische Universität Darmstadt, KIT-TUD Joint Research Laboratory for Nanomaterials, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Krause, B. [Karlsruhe Institute of Technology (KIT), Institute for Photon Science and Synchrotron Radiation (IPS), D-76344 Eggenstein-Leopoldshafen (Germany); Hahn, H. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Technische Universität Darmstadt, KIT-TUD Joint Research Laboratory for Nanomaterials, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Karlsruhe Institute of Technology (KIT), Helmholtz Institute Ulm, Albert-Einstein-Allee 11, 89081 Ulm (Germany); Dasgupta, S. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Weinhardt, L.; Heske, C. [Karlsruhe Institute of Technology (KIT), Institute for Photon Science and Synchrotron Radiation (IPS), D-76344 Eggenstein-Leopoldshafen (Germany); Karlsruhe Institute of Technology (KIT), Institute for Chemical Technology and Polymer Chemistry (ITCP), 76128 Karlsruhe (Germany); University of Nevada, Las Vegas (UNLV), Department of Chemistry and Biochemistry, Las Vegas, NV 89154-4003 (United States)

    2017-02-28

    Highlights: • The effect of NaCl ink additive on indium oxide nanoparticle thin films is analyzed. • NaCl changes the thin film morphology and its chemical structure. • NaCl decomposes the nanoparticle shell leading to lower charge transport barriers. • Explanation of the increase in field effect mobility from 1 to >12 cm{sup 2}/Vs. • Understanding of the ink drying process and the nanoparticle agglomeration behavior. - Abstract: One of the major challenges in flexible electronics industry is the fabrication of high-mobility field-effect transistors (FETs) at ambient conditions and on inexpensive polymer substrates compatible with roll-to-roll printing technology. In this context, a novel and general route towards room-temperature fabrication of printed FETs with remarkably high field-effect mobility (μ{sub FET}) above 12 cm{sup 2}/Vs has recently been developed. A detailed understanding of the chemical structure of the involved nanoparticle (NP) thin films, prepared by chemical flocculation, is essential for further optimization of the charge transport properties of such devices. In this study, we thus analyze indium oxide NP thin films with and without NaCl additive using x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). It is demonstrated that the introduction of a sodium chloride additive to the ink leads to a strongly altered film morphology and a modification of the NP shell. The results suggest that, as a consequence of the additive, the charge-transport barriers between individual indium oxide NPs are lowered, facilitating long-range charge percolation paths despite the presence of a significant concentration of carbonaceous residues.

  6. On-chip multi-wavelength laser sources fabricated using generic photonic integration technology

    NARCIS (Netherlands)

    Latkowski, S.; Williams, K.A.; Bente, E.A.J.M.

    Generic photonic integration technology platforms allow for design and fabrication of large complexity application specific photonic integrated circuits. Monolithic active-passive integration on indium phosphide substrate naturally enables a reliable co-integration of optical gain elements and

  7. Effects of a powered air-purifying respirator intervention on indium exposure reduction and indium related biomarkers among ITO sputter target manufacturing workers.

    Science.gov (United States)

    Liu, Hung-Hsin; Chen, Chang-Yuh; Lan, Cheng-Hang; Chang, Cheng-Ping; Peng, Chiung-Yu

    2016-01-01

    This study aimed to evaluate the efficacy of powered air-purifying respirators (PAPRs) worn by the workers, and to investigate the effect of this application on exposure and preclinical effects in terms of workplace measuring and biomarker monitoring in ITO sputter target manufacturing plants and workers, respectively. Fifty-four workers were recruited and investigated from 2010-2012, during which PAPRs were provided to on-site workers in September 2011. Each worker completed questionnaires and provided blood and urine samples for analysis of biomarkers of indium exposure and preclinical effects. Area and personal indium air samples were randomly collected from selected worksites and from participants. The penetration percentage of the respirator (concentration inside respirator divided by concentration outside respirator) was 6.6%. Some biomarkers, such as S-In, SOD, GPx, GST, MDA, and TMOM, reflected the decrease in exposure and showed lower levels, after implementation of PAPRs. This study is the first to investigate the efficacy of PAPRs for reducing indium exposure. The measurement results clearly showed that the implementation of PAPRs reduces levels of indium-related biomarkers. These findings have practical applications for minimizing occupational exposure to indium and for managing the health of workers exposed to indium.

  8. Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

    Science.gov (United States)

    Cardelino, B. H.; Moore, C. E.; Cardelino, C. A.; Frazier, D. O.; Backmann, K. J.

    2000-01-01

    The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

  9. Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

    Science.gov (United States)

    Ho, Szuheng; Yu, Hyeonggeun; So, Franky

    2017-11-01

    Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

  10. Catalytic property of an indium-deposited powder-type material containing silicon and its dependence on the dose of indium nano-particles irradiated by a pulse arc plasma process

    Directory of Open Access Journals (Sweden)

    Satoru Yoshimura

    2017-06-01

    Full Text Available Indium nano-particle irradiations onto zeolite powders were carried out using a pulse arc plasma source system. X-ray photoelectron spectroscopic and scanning electron microscopic studies of an indium irradiated zeolite sample revealed that indium nano-particles were successfully deposited on the sample. Besides, the sample was found to be capable of catalyzing an organic chemical reaction (i.e., Friedel-Crafts alkylation. Then, we examined whether or not the catalytic ability depends on the irradiated indium dose, having established the optimal indium dose for inducing the catalytic effect.

  11. Indium tin oxide films prepared via wet chemical route

    International Nuclear Information System (INIS)

    Legnani, C.; Lima, S.A.M.; Oliveira, H.H.S.; Quirino, W.G.; Machado, R.; Santos, R.M.B.; Davolos, M.R.; Achete, C.A.; Cremona, M.

    2007-01-01

    In this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an α-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 deg. C. A 10 at.% of doping of Sn 4+ ions into an In 2 O 3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10 -3 Ω cm, 2.9 cm 2 /V s and - 3.5 x 10 20 /cm 3 , respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained

  12. Selective growth of gold onto copper indium sulfide selenide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Witt, Elena; Parisi, Juergen; Kolny-Olesiak, Joanna [Oldenburg Univ. (Germany). Inst. of Physics, Energy and Semiconductor Research

    2013-05-15

    Hybrid nanostructures are interesting materials for numerous applications in chemistry, physics, and biology, due to their novel properties and multiple functionalities. Here, we present a synthesis of metal-semiconductor hybrid nanostructures composed of nontoxic I-III-VI semiconductor nanoparticles and gold. Copper indium sulfide selenide (CuInSSe) nanocrystals with zinc blende structure and trigonal pyramidal shape, capped with dodecanethiol, serve as an original semiconductor part of a new hybrid nanostructure. Metallic gold nanocrystals selectively grow onto vertexes of these CuInSSe pyramids. The hybrid nanostructures were studied by transmission electron microscopy, energy dispersive X-ray analysis, X-ray diffraction, and UV-Vis-absorption spectroscopy, which allowed us conclusions about their growth mechanism. Hybrid nanocrystals are generated by replacement of a sacrificial domain in the CuInSSe part. At the same time, small selenium nanocrystals form that stay attached to the remaining CuInSSe/Au particles. Additionally, we compare the synthesis and properties of CuInSSe-based hybrid nanostructures with those of copper indium disulfide (CuInS{sub 2}). CuInS{sub 2}/Au nanostructures grow by a different mechanism (surface growth) and do not show any selectivity. (orig.)

  13. Vibrational Comfort on Board the Vehicle: Influence of Speed Bumps and Comparison between Different Categories of Vehicle

    Directory of Open Access Journals (Sweden)

    Vincenzo Barone

    2016-01-01

    Full Text Available This paper shows the results of a study conducted on five different categories of vehicles in a specific test site. The aim was to investigate how the effect of the test site discontinuity determines variations of comfort related to the increase in speed and to the five selected road vehicles of different classes. Measurements were obtained by combining data relating to vibrations in the three reference axes, detected through a vibration dosimeter (VIB-008, and geolocation data (latitude, longitude, and speed identified by the GPS inside a smartphone. This procedure, through the synchronization between dosimeter and GPS location, has been helpful in postprocessing to eliminate any measurement anomalies generated by the operator. After the survey campaign it was determined that a formulation allows defining a Comfort Index (CI depending on velocity and five vehicles of different classes. This study showed that the presence of speed bumps, in the test site investigated, appears to be uncomfortable even at speeds well below those required by the Highway Code.

  14. The reminiscence bump without memories: The distribution of imagined word-cued and important autobiographical memories in a hypothetical 70-year-old.

    Science.gov (United States)

    Koppel, Jonathan; Berntsen, Dorthe

    2016-08-01

    The reminiscence bump is the disproportionate number of autobiographical memories dating from adolescence and early adulthood. It has often been ascribed to a consolidation of the mature self in the period covered by the bump. Here we stripped away factors relating to the characteristics of autobiographical memories per se, most notably factors that aid in their encoding or retention, by asking students to generate imagined word-cued and imagined 'most important' autobiographical memories of a hypothetical, prototypical 70-year-old of their own culture and gender. We compared the distribution of these fictional memories with the distributions of actual word-cued and most important autobiographical memories in a sample of 61-70-year-olds. We found a striking similarity between the temporal distributions of the imagined memories and the actual memories. These results suggest that the reminiscence bump is largely driven by constructive, schematic factors at retrieval, thereby challenging most existing theoretical accounts. Copyright © 2016 Elsevier Inc. All rights reserved.

  15. IS THE LATE NEAR-INFRARED BUMP IN SHORT-HARD GRB 130603B DUE TO THE LI-PACZYNSKI KILONOVA?

    International Nuclear Information System (INIS)

    Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming; Xu, Dong; Wu, Xue-Feng

    2013-01-01

    Short-hard gamma-ray bursts (GRBs) are widely believed to be produced by the merger of two binary compact objects, specifically by two neutron stars or by a neutron star orbiting a black hole. According to the Li-Paczynski kilonova model, the merger would launch sub-relativistic ejecta and a near-infrared/optical transient would then occur, lasting up to days, which is powered by the radioactive decay of heavy elements synthesized in the ejecta. The detection of a late bump using the Hubble Space Telescope (HST) in the near-infrared afterglow light curve of the short-hard GRB 130603B is indeed consistent with such a model. However, as shown in this Letter, the limited HST near-infrared light curve behavior can also be interpreted as the synchrotron radiation of the external shock driven by a wide mildly relativistic outflow. In such a scenario, the radio emission is expected to peak with a flux of ∼100 μJy, which is detectable for current radio arrays. Hence, the radio afterglow data can provide complementary evidence on the nature of the bump in GRB 130603B. It is worth noting that good spectroscopy during the bump phase in short-hard bursts can test the validity of either model above, analogous to spectroscopy of broad-lined Type Ic supernova in long-soft GRBs

  16. USING THE 1.6 μm BUMP TO STUDY REST-FRAME NEAR-INFRARED-SELECTED GALAXIES AT REDSHIFT 2

    International Nuclear Information System (INIS)

    Sorba, Robert; Sawicki, Marcin

    2010-01-01

    We explore the feasibility and limitations of using the 1.6 μm bump as a photometric redshift indicator and selection technique, and use it to study the rest-frame H-band galaxy luminosity and stellar mass functions (SMFs) at redshift z ∼ 2. We use publicly available Spitzer/IRAC images in the GOODS fields and find that color selection in the IRAC bandpasses alone is comparable in completeness and contamination to BzK selection. We find that the shape of the 1.6 μm bump is robust, and photometric redshifts are not greatly affected by choice of model parameters. Comparison with spectroscopic redshifts shows photometric redshifts to be reliable. We create a rest-frame NIR-selected catalog of galaxies at z ∼ 2 and construct a galaxy SMF. Comparisons with other SMFs at approximately the same redshift but determined using shorter wavelengths show good agreement. This agreement suggests that selection at bluer wavelengths does not miss a significant amount of stellar mass in passive galaxies. Comparison with SMFs at other redshifts shows evidence for the downsizing scenario of galaxy evolution. We conclude by pointing out the potential for using the 1.6 μm bump technique to select high-redshift galaxies with the JWST, whose λ>0.6 μm coverage will not be well suited to selecting galaxies using techniques that require imaging at shorter wavelengths.

  17. Drivers and Constraints of Critical Materials Recycling: The Case of Indium

    Directory of Open Access Journals (Sweden)

    Jenni Ylä-Mella

    2016-11-01

    Full Text Available Raw material criticality studies are receiving increasing attention because an increasing number of elements of great economic importance, performing essential functions face high supply risks. Scarcity of key materials is a potential barrier to large-scale deployment of sustainable energy and clean-tech technologies as resorting to several critical materials. As physical scarcity and geopolitical issues may present a barrier to the supply of critical metals, recycling is regarded as a possible solution to substitute primary resources for securing the long-term supply of critical metals. In this paper, the main drivers and constraints for critical materials recycling are analyzed from literature, considering indium as a case study of critical materials. This literature review shows that waste electrical and electronic equipment (WEEE could be a future source of critical metals; however, the reduction of dissipation of critical materials should have much higher priority. It is put forward that more attention should be paid to sustainable management of critical materials, especially improved practices at the waste management stage. This calls for not only more efficient WEEE recycling technologies, but also revising priorities in recycling strategies.

  18. Regularly arranged indium islands on glass/molybdenum substrates upon femtosecond laser and physical vapor deposition processing

    Energy Technology Data Exchange (ETDEWEB)

    Ringleb, F.; Eylers, K.; Teubner, Th.; Boeck, T., E-mail: torsten.boeck@ikz-berlin.de [Leibniz-Institute for Crystal Growth, Max-Born-Straße 2, Berlin 12489 (Germany); Symietz, C.; Bonse, J.; Andree, S.; Krüger, J. [Bundesanstalt für Materialforschung und-prüfung (BAM), Unter den Eichen 87, Berlin 12205 (Germany); Heidmann, B.; Schmid, M. [Department of Physics, Freie Universität Berlin, Arnimalle 14, Berlin 14195 (Germany); Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Lux-Steiner, M. [Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Heterogeneous Material Systems, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany)

    2016-03-14

    A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass, which can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide used in photovoltaics. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.

  19. Investigation into cathode polarization during deposition of rhodium-nickel and rhodium-indium alloys

    International Nuclear Information System (INIS)

    Evdokimova, N.V.; Byacheslavov, P.M.; Lokshtanova, O.G.

    1979-01-01

    The results of kinetic regularities experimental investigations during electrodeposition of rhodium-nickel and rhonium-indium alloys are presented. Methods of general and partial polarization curves have been used to show the nature of polarization during the rhonium-nickel and rhodium-indium alloys deposition. It is shown that indium into the rhodium-indium alloy and nickel into the rhodium-nickel alloy deposit with great depolarization ( PHIsub(In)sup(0)=-0.33B, PHIsub(Ni)sup(0)=-0.23B). Indium and nickel in pure form do not deposit from the electrolytes of the given composition (H 2 SO 4 - 50 g/l, HNH 2 SO 3 -10 g/l). The recalculation of partial polarization curve of indium precipitation into the rhodium-indium alloy in the mixed kinetics coordinates gives a straight line with 40 mV inclination angle. This corresponds to the delayed stage of the second electron addition with the imposition of diffusion limitations

  20. Technology.

    Science.gov (United States)

    Online-Offline, 1998

    1998-01-01

    Focuses on technology, on advances in such areas as aeronautics, electronics, physics, the space sciences, as well as computers and the attendant progress in medicine, robotics, and artificial intelligence. Describes educational resources for elementary and middle school students, including Web sites, CD-ROMs and software, videotapes, books,…

  1. Efficient sub-Doppler transverse laser cooling of an indium atomic beam

    International Nuclear Information System (INIS)

    Kim, Jae-Ihn

    2009-01-01

    Laser cooled atomic gases and atomic beams are widely studied samples in experimental research in atomic and optical physics. For the application of ultra cold gases as model systems for e.g. quantum many particle systems, the atomic species is not very important. Thus this field is dominated by alkaline, earthalkaline elements which are easily accessible with conventional laser sources and have convenient closed cooling transition. On the other hand, laser cooled atoms may also be interesting for technological applications, for instance for the creation of novel materials by atomic nanofabrication (ANF). There it will be important to use technologically relevant materials. As an example, using group III atoms of the periodical table in ANF may open a route to generate fully 3D structured composite materials. The minimal requirement in such an ANF experiment is the collimation of an atomic beam which is accessible by one dimensional laser cooling. In this dissertation, I describe transverse laser cooling of an Indium atomic beam. For efficient laser cooling on a cycling transition, I have built a tunable, continuous-wave coherent ultraviolet source at 326 nm based on frequency tripling. For this purpose, two independent high power Yb-doped fiber amplifiers for the generation of the fundamental radiation at λ ω = 977 nm have been constructed. I have observed sub-Doppler transverse laser cooling of an Indium atomic beam on a cycling transition of In by introducing a polarization gradient in the linear-perpendicular-linear configuration. The transverse velocity spread of a laser-cooled In atomic beam at full width at half maximum was achieved to be 13.5±3.8 cm/s yielding a full divergence of only 0.48 ± 0.13 mrad. In addition, nonlinear spectroscopy of a 3-level, Λ-type level system driven by a pump and a probe beam has been investigated in order to understand the absorption line shapes used as a frequency reference in a previous two-color spectroscopy experiment

  2. Efficient sub-Doppler transverse laser cooling of an indium atomic beam

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae-Ihn

    2009-07-23

    Laser cooled atomic gases and atomic beams are widely studied samples in experimental research in atomic and optical physics. For the application of ultra cold gases as model systems for e.g. quantum many particle systems, the atomic species is not very important. Thus this field is dominated by alkaline, earthalkaline elements which are easily accessible with conventional laser sources and have convenient closed cooling transition. On the other hand, laser cooled atoms may also be interesting for technological applications, for instance for the creation of novel materials by atomic nanofabrication (ANF). There it will be important to use technologically relevant materials. As an example, using group III atoms of the periodical table in ANF may open a route to generate fully 3D structured composite materials. The minimal requirement in such an ANF experiment is the collimation of an atomic beam which is accessible by one dimensional laser cooling. In this dissertation, I describe transverse laser cooling of an Indium atomic beam. For efficient laser cooling on a cycling transition, I have built a tunable, continuous-wave coherent ultraviolet source at 326 nm based on frequency tripling. For this purpose, two independent high power Yb-doped fiber amplifiers for the generation of the fundamental radiation at {lambda}{sub {omega}} = 977 nm have been constructed. I have observed sub-Doppler transverse laser cooling of an Indium atomic beam on a cycling transition of In by introducing a polarization gradient in the linear-perpendicular-linear configuration. The transverse velocity spread of a laser-cooled In atomic beam at full width at half maximum was achieved to be 13.5{+-}3.8 cm/s yielding a full divergence of only 0.48 {+-} 0.13 mrad. In addition, nonlinear spectroscopy of a 3-level, {lambda}-type level system driven by a pump and a probe beam has been investigated in order to understand the absorption line shapes used as a frequency reference in a previous two

  3. Recovery of indium ions by nanoscale zero-valent iron

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Wen; Su, Yiming [Tongji University, State Key Laboratory of Pollution Control and Resources Reuse (China); Wen, Zhipan [Wuhan Institute of Technology, School of Chemistry and Environmental Engineering (China); Zhang, Yalei; Zhou, Xuefei, E-mail: zhouxuefei@tongji.edu.cn; Dai, Chaomeng, E-mail: daichaomeng@tongji.edu.cn [Tongji University, State Key Laboratory of Pollution Control and Resources Reuse (China)

    2017-03-15

    Indium and its compounds have plenty of industrial applications and high demand. Therefore, indium recovery from various industrial effluents is necessary. It was sequestered by nanoscale zero-valent iron (nZVI) whose size mainly ranged from 50 to 70 nm. Adsorption kinetics and isotherm, influence of pH, and ionic strength were thoroughly investigated. The reaction process was well fitted to a pseudo second-order model, and the maximum adsorption capacity of In(III) was 390 mg In(III)/g nZVI similar to 385 mg In(III)/g nZVI at 298 K calculated by Langmuir model. The mole ratio of Fe(II) released to In(III) immobilized was 3:2, which implied a special chemical process of co-precipitation combined Fe(OH){sub 2} with In(OH){sub 3}. Transmission electron microscopy with an energy-disperse X-ray (TEM-EDX), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were used to characterize surface morphology, corrosion products, and valence state of indium precipitate formed on nanoparticles. The structural evolution changed from core-shell structure of iron oxide to sheet structure of co-precipitation, to sphere structure that hydroxide gradually dissolved as the pH decreased, and to cavity structures for the pH continually decreased. Furthermore, below pH 4.7, the In(III) enrichment was inhibited for the limited capacity of co-precipitation. Also, it was found that Ca{sup 2+} and HPO{sub 4}{sup 2−} have more negative influence on In(III) recovery compared with Na{sup +}, NO{sub 3}{sup −}, HCO{sub 3}{sup −}, and SO{sub 4}{sup 2−}. Therefore, the In(III) recovery can be described by a mechanism which consists of adsorption, co-precipitation, and reduction and was over 78% even after 3 cycles. The results confirmed that it was applicable to employ nZVI for In(III) immobilization.

  4. Interaction of cadmium and indium nitrate mixture with sodium tungstate in aqueous solution

    Energy Technology Data Exchange (ETDEWEB)

    Belousova, E E; Krivobok, V I; Gruba, A I [Donetskij Gosudarstvennyj Univ. (Ukrainian SSR)

    1982-01-01

    The interaction of the mixture of cadmium and indium nitrates with sodium tungstate in aqueous solution is studied using the methods of ''residual concentrations'', pH potentiometry and conductometry. Independent of the ratio of components in the initial solution a mixture of coprecipitated normal tungstates of cadmium and indium is formed in the system. Heat treatment of the precipitates at 800 deg C for 50 hrs with subsequent hardening results in the formation of solid solutions on the basis of normal cadmium and indium tungstates.

  5. Polarografic study about the complex formation between indium (III) and sodium azide, in aqueous media

    International Nuclear Information System (INIS)

    Tokoro, R.; Bertotti, M.

    1988-01-01

    The present work is a branch of the main work concerned with the complex formation between several metal cations and azide ligand in aqueous media. The polarographic behavior of indium in azide system showed the tendency of complexation. Using polarographic method to determine the half potential of indium at each analytical concentration afforded experimental data to evaluate the constants. The azide concentrations was modified from 1 m to 100 m , the ionic strength held at 2,0 M with sodium perchlorate, indium concentration 7.892 x 10 -4 M, and temperature kept constant at 25,0 0 C. (author) [pt

  6. Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films

    International Nuclear Information System (INIS)

    Pathan, H.M.; Lokhande, C.D.; Kulkarni, S.S.; Amalnerkar, D.P.; Seth, T.; Han, Sung-Hwan

    2005-01-01

    Indium sulphide (In 2 S 3 ) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In 2 S 3 thin film. The optical band gap was found to be 2.7 eV. The film appeared to be smooth and homogeneous from SEM study

  7. Indium determination by spectral overlappings of lines in atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Gomez, J.J.; Huicque, L. d'; Garcia Vior, L.O.

    1991-01-01

    A molybdenum hollow-cathode lamp filled with neon can be used to determine indium. Characteristic concentration for this element is 4.5 mg/L in the 325 nm spectral region for the Mo(I) 325.621 nm line. In addition, values of 0.4 mg/L and 0.3 mg/L are obtained with the Mo(I) 410.215 nm and Ne(I) 451.151 nm lines, respectively. These spectral overlappings allow the determination of indium in silver-cadmium-indium alloys. (Author) [es

  8. False positive indium-111 white blood cell scan in a closed clavicle fracture

    International Nuclear Information System (INIS)

    Friedman, R.J.; Gordon, L.

    1988-01-01

    Aggressive treatment of the multiply injured patient often requires early fixation of many fractures, some of which may be open. Often, patients develop postoperative fevers requiring a thorough workup to rule out infection. Recently, indium-111 white blood cell (WBC) imaging has become a valuable adjunct in the diagnosis of acute infection. The patient described had a simple, closed clavicle fracture with markedly increased activity on an indium-111 WBC scan obtained for fever workup. This subsequently proved to be a normal, healing, noninfected fracture by other diagnostic techniques. Noninfected, simple closed fractures should be added to the list of causes for a false-positive indium-111 WBC scan

  9. First-principles investigation of indium diffusion in a silicon substrate

    International Nuclear Information System (INIS)

    Yoon, Kwan-Sun; Hwang, Chi-Ok; Yoo, Jae-Hyun; Won, Tae-Young

    2006-01-01

    In this paper, we report the total energy, the minimum energy path, and the migration energy of indium in a silicon substrate by using ab-initio calculations. Stable configurations during indium diffusion were obtained from the calculation of the total energy, and we estimated the minimum energy path (MEP) with the nudged elastic band (NEB) method. After finding the MEP, we found the energy barrier for the diffusion of indium to be 0.8 eV from an exact calculation of the total energies at the minimum and the transition state.

  10. Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

    KAUST Repository

    Elafandy, Rami T.

    2011-12-01

    Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

  11. Integrated optical MEMS using through-wafer vias and bump-bonding.

    Energy Technology Data Exchange (ETDEWEB)

    McCormick, Frederick Bossert; Frederick, Scott K.

    2008-01-01

    This LDRD began as a three year program to integrate through-wafer vias, micro-mirrors and control electronics with high-voltage capability to yield a 64 by 64 array of individually controllable micro-mirrors on 125 or 250 micron pitch with piston, tip and tilt movement. The effort was a mix of R&D and application. Care was taken to create SUMMiT{trademark} (Sandia's ultraplanar, multilevel MEMS technology) compatible via and mirror processes, and the ultimate goal was to mate this MEMS fabrication product to a complementary metal-oxide semiconductor (CMOS) electronics substrate. Significant progress was made on the via and mirror fabrication and design, the attach process development as well as the electronics high voltage (30 volt) and control designs. After approximately 22 months, the program was ready to proceed with fabrication and integration of the electronics, final mirror array, and through wafer vias to create a high resolution OMEMS array with individual mirror electronic control. At this point, however, mission alignment and budget constraints reduced the last year program funding and redirected the program to help support the through-silicon via work in the Hyper-Temporal Sensors (HTS) Grand Challenge (GC) LDRD. Several months of investigation and discussion with the HTS team resulted in a revised plan for the remaining 10 months of the program. We planned to build a capability in finer-pitched via fabrication on thinned substrates along with metallization schemes and bonding techniques for very large arrays of high density interconnects (up to 2000 x 2000 vias). Through this program, Sandia was able to build capability in several different conductive through wafer via processes using internal and external resources, MEMS mirror design and fabrication, various bonding techniques for arrayed substrates, and arrayed electronics control design with high voltage capability.

  12. Polarographic determination of indium and thallium iodides in phosphor tablets

    International Nuclear Information System (INIS)

    Babich, G.A.; Dzhurka, G.F.; Kozhushko, G.M.; Kravtsova, K.F.; Magda, V.I.

    1984-01-01

    The technique of polarographic determination of indium and thallium iodides in phosphor tablets without preliminary separation of elements was developed. Mercury-dropping electrode was used as an indicator, and saturated calomel electrode was used as an auxiliary electrode. A recording of reduction currents was performed in the potential interval from -0.25 up to 1.15 V at potential sweep speed of 200 mV/min. Optimum conditions of sample acidic decomposition and polarography were presented. A solution of ethylene diamine (0.5 M), of ammonia (0.25 M) and of potassium chloride (0.05 M) served as a background electrolyte. The suggested technique allows one to determine component contents in tablets with a satisfactory accuracy. A period of one tablet analysis constitutes 1.5 h

  13. Indium antimonide crystal defects formed by fast neutron irradiation

    International Nuclear Information System (INIS)

    Vitovskij, N.A.; Dolgolenko, A.P.; Mashovets, T.V.; Oganesyan, O.V.

    1979-01-01

    It is shown, that indium antimonide irradiation with fast neutrons of reactor results in the formation of disorded regions with a mean radius of approximately 130 A surrounded with space charge regions forming barriers for main carriers. But the found values of defect cluster depolarization coefficient (Lsub(x)sup(n)=0.18 and Lsub(x)sup(p)=0.29) show, that the clusters have marked conductivity for main charge carriers. The found position of the Fermi level in the disorded regions Esub(F)=Esub(c)-0.085 eV does not depend on the impurity type and its concentration in an initial material. The disorded regions play the main part in charge carrier scattering at low temperatures and markedly contribute to the change of mobility at 80 K. It is found, that irradiation temperature change in the range from 77 to 300 K does not effect practically on the disorded region parameters

  14. Indium tin oxide surface smoothing by gas cluster ion beam

    CERN Document Server

    Song, J H; Choi, W K

    2002-01-01

    CO sub 2 cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surfaces and thus to attain highly smooth surfaces. CO sub 2 monomer ions are also bombarded on the ITO surfaces at the same acceleration voltage to compare sputtering phenomena. From the atomic force microscope results, the irradiation of monomer ions makes the hillocks sharper and the surfaces rougher from 1.31 to 1.6 nm in roughness. On the other hand, the irradiation of CO sub 2 cluster ions reduces the height of hillocks and planarize the ITO surfaces as smooth as 0.92 nm in roughness. This discrepancy could be explained by large lateral sputtering yield of the cluster ions and re-deposition of sputtered particles by the impact of the cluster ions on surfaces.

  15. Nonequilibrium dephasing in two-dimensional indium oxide films

    International Nuclear Information System (INIS)

    Ovadyahu, Z.

    2001-01-01

    We report on results of resistance R and magnetoresistance in diffusive indium oxide films measured down to T=0.28K. Analyzing the data using weak-localization theory shows that the phase-coherent time τ v ar-phi increases without bound as T->0. However, this result is obtained only when the voltage applied to the sample V is sufficiently small. When V is not small, τ v ar-phi may appear to 'saturate' while R continues to increase as T->0. Possible reasons for this intriguing behavior are discussed. It is argued that in out-of-equilibrium situations R(T) and τ v ar-phi(T) need not behave similarly. We suggest a heuristic picture, involving two-level systems, which might be consistent with our observations

  16. Indium-111 tropolone, a new tracer for platelet labeling

    International Nuclear Information System (INIS)

    Dewanjee, M.K.; Rao, S.A.; Rosemark, J.A.; Chowdhury, S.; Didisheim, P.

    1982-01-01

    Platelets have been labeled with a new neutral, lipid-soluble metal complex of indium 111 ( 111 In) and tropolone. Unlike oxine, which is soluble in ethyl alcohol, tropolone is soluble in isotonic saline. Platelet labeling with 111 In tropolone can be performed in both acid-citrate-dextrose (ACD) plasma and ACD saline within two hours. Labeling efficiency has been 80% to 90%. 111 In tropolone in ACD saline and ACD plasma at tropolone concentrations of 5 and 10 micrograms/ml, respectively, and incubation of the platelets with the tracer at room temperature for 20 minutes were optimal conditions for labeling. The authors have developed an ACD-saline kit for convenient preparation of 111 In-labeled platelets. No adverse effect of 111 In tropolone on platelets has been observed in studies of biodistribution, recovery, and survival of platelets in rabbits and dogs

  17. Indium-111 tropolone, a new tracer for platelet labeling

    International Nuclear Information System (INIS)

    Dewanjee, M.K.; Rao, S.A.; Rosemark, J.A.; Chowdhury, S.; Didisheim, P.

    1982-01-01

    Platelets have been labeled with a new neutral, lipid-soluble metal complex of indium 111 ( 111 In) and tropolone. Unlike oxine, which is soluble in ethyl alcohol, tropolone is soluble in isotonic saline. Platelet labeling with 111 In tropolone can be performed in both acid-citrate-dextrose (ACD) plasma and ACD saline within two hours. Labeling efficiency has been 80% to 90%. 111 In tropolone in ACD saline and ACD plasma at tropolone concentrations of 5 to 10 μg/ml, respectively, and incubation of the platelets with the tracer at room temperature for 20 minutes were optimal conditions for labeling. The authors have developed an ACD-saline kit for convenient preparation of 111 In-labeled platelets. No adverse effect of 111 In tropolone on platelets has been observed in studies of biodistribution, recovery, and survival of platelets in rabbits and dogs

  18. Interaction of simple indium iodides with silver- and aluminium iodides

    International Nuclear Information System (INIS)

    Denisov, Yu.N.; Halova, N.S.; Fedorov, P.I.

    1976-01-01

    Fusibility diagrams of the systems InI-AlI 3 , InI-AgI, InI 2 -AgI, and InI 2 -AlI 3 have been studied. In the system InI-AlI 3 a compound InAlI 4 has been detected having a melting point 194 deg C and two lamination regions. In the system InI-AgI two compounds In 2 AgI 3 and InAgI 2 are formed which melt incongruently at 272 deg and 220 deg C, respectively. The formation of the compounds has been confirmed by X-ray phase analysis. Specific electroconductivity of a number of alloys of the system InI-AlI 3 has been studied. The systems of eutectic type formed by diiodide of indium with iodides of silver and aluminium have been studied by thermal and X-ray analysis and by measuring electroconductivity

  19. Chemical synthesis of hexagonal indium nitride nanocrystallines at low temperature

    Science.gov (United States)

    Wang, Liangbiao; Shen, Qianli; Zhao, Dejian; Lu, Juanjuan; Liu, Weiqiao; Zhang, Junhao; Bao, Keyan; Zhou, Quanfa

    2017-08-01

    In this study, hexagonal indium nitride nanocystallines with high crystallinity have been prepared by the reaction of InCl3·4H2O, sulfur and NaNH2 in an autoclave at 160 °C. The crystal structures and morphologies of the obtained InN sample are characterized by X-ray diffraction and scanning electron microscope. As InCl3·4H2O is substituted by In(NO3)3·4.5H2O, InN nanocrystallines could also be obtained by using the similar method. The photoluminescence spectrum shows that the InN emits a broad peak positioned at 2.3 eV.

  20. Genotoxicity of indium tin oxide by comet test

    Directory of Open Access Journals (Sweden)

    İbrahim Hakkı Ciğerci

    2015-06-01

    Full Text Available Indium tin oxide (ITO is used for liquid crystal display (LCDs, electrochromic displays, flat panel displays, field emission displays, touch or laptop computer screens, cell phones, energy conserving architectural windows, defogging aircraft and automobile windows, heat-reflecting coatings to increase light bulb efficiency, gas sensors, antistatic window coatings, wear resistant layers on glass, nanowires and nanorods because of its unique properties of high electrical conductivity, transparency and mechanical resistance.Genotoxic effects of ITO were investigated on the root cells of Allium cepa by Comet assay. A. cepa roots were treated with the aqueous dispersions of ITO at 5 different concentrations (12.5, 25, 50, 75, and 100 ppm for 4 h. A significant increase in DNA damage was a observed at all concentrations of ITO by Comet assay. These result indicate that ITO exhibit genotoxic activity in A. cepa root meristematic cells.

  1. Gas Sensing Properties of Indium Tin Oxide Nanofibers

    Directory of Open Access Journals (Sweden)

    Shiyou Xu

    2009-11-01

    Full Text Available Indium Tin Oxide (ITO nanofibers were fabricated by the electrospinning process. The morphology and crystal structure of ITO nanofibers were studied by SEM, XRD, and TEM respectively. The results showed that polycrystalline ITO nanofibers with an average diameter of 80 nm were obtained. Sensors based on these nanofibers were fabricated by collecting these nanofibers on the integrated sensor platforms. The ITO nanofiber-based sensors showed very fast and high sensor responses at both room and elevated temperatures for NO2. The ratios of resistance in NO2 over that in air were 5 at room temperature and 34 at the optimal working temperature, respectively. The ITO nanofiber-based sensor can be repeatedly used. The details for the fast, enhanced sensor responses and the optimal temperature were discussed.

  2. Multiple carrier transport in N-face indium nitride

    International Nuclear Information System (INIS)

    Koblmueller, Gregor; Gallinat, Chad S.; Speck, James S.; Umana-Membreno, Gilberto A.; Nener, Brett D.; Parish, Giacinta; Fehlberg, Tamara B.

    2008-01-01

    We present temperature (20-300 K) dependent multi-carrier measurements of electron species in N-face indium nitride. N-face InN samples were grown to different thicknesses (500-2000 nm) via plasma-assisted molecular beam epitaxy on C-face SiC substrates. Surface and bulk electron transport properties were extracted using a quantitative mobility spectrum analysis. Mobility of both bulk and surface electron species increase with film thickness. The temperature dependence of the mobility of both species differs to that of In-polar samples studied previously, while the mobility of surface electrons is more than twice that of In-polar samples with only a slight corresponding reduction in sheet concentration. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  4. Optical properties of indium phosphide nanowire ensembles at various temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz-NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2010-09-03

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  5. AC surface photovoltage of indium phosphide nanowire networks

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J.; Kobayashi, Nobuhiko P. [California Univ., Santa Cruz, CA (United States). Baskin School of Engineering; California Univ., Santa Cruz, CA (US). Nanostructured Energy Conversion Technology and Research (NECTAR); NASA Ames Research Center, Moffett Field, CA (United States). Advanced Studies Laboratories

    2012-06-15

    Surface photovoltage is used to study the dynamics of photogenerated carriers which are transported through a highly interconnected three-dimensional network of indium phosphide nanowires. Through the nanowire network charge transport is possible over distances far in excess of the nanowire lengths. Surface photovoltage was measured within a region 10.5-14.5 mm from the focus of the illumination, which was chopped at a range of frequencies from 15 Hz to 30 kHz. Carrier dynamics were modeled by approximating the nanowire network as a thin film, then fitted to experiment suggesting diffusion of electrons and holes at approximately 75% of the bulk value in InP but with significantly reduced built-in fields, presumably due to screening by nanowire surfaces. (orig.)

  6. Optical properties of indium phosphide nanowire ensembles at various temperatures

    International Nuclear Information System (INIS)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P

    2010-01-01

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  7. Infrared absorption spectra of selenate compounds of indium (3)

    International Nuclear Information System (INIS)

    Kharitonov, Yu.Ya.; Kadoshnikova, N.V.; Tananaev, I.V.

    1979-01-01

    Obtained and discussed are infrared absorption spectra (400-4000 cm -1 ) of the following indium selenates: In 2 (SeO 4 ) 3 x5H 2 O, In 2 (SeO 4 ) 3 x9H 2 O, NaIn(SeO 4 ) 2 x6H 2 O, NaIn(SeO 4 ) 2 xH 2 O, MIn(SeO 4 ) 2 x4H 2 O (M=NH 4 , K, Rb), CsIn(SeO 4 ) 2 x2H 2 O, Na 3 In(SeO 4 ) 3 x7H 2 O, MIn(SeO 4 ) 2 (M=NH 4 , Na, K, Rb, Cs), M 2 InOH(SeO 4 ) 2 xyH 2 O (M=NH 4 , Na, K, Rb) and K 2 InOD(SeO 4 ) 2 xyD 2 O

  8. Temperature dependent structural and vibrational properties of liquid indium

    Science.gov (United States)

    Patel, A. B.; Bhatt, N. K.

    2018-05-01

    The influence of the temperature effect on both the structure factor and the phonon dispersion relation of liquid indium have been investigated by means of pseudopotential theory. The Percus-Yevick Hard Sphere reference system is applied to describe the structural calculation. The effective electron-ion interaction is explained by using modified empty core potential due to Hasegawa et al. along with a local field correction function due to Ichimaru-Utsumi (IU). The temperature dependence of pair potential needed at higher temperatures was achieved by multiplying the damping factor exp(- π/kBT2k F r ) in the pair potential. Very close agreement of static structure factor, particularly, at elevated temperatures confirms the validity of the local potential. A positive dispersion is found in low-q region and the correct trend of phonon dispersion branches like the experimental; shows all broad features of collective excitations in liquid metals.

  9. Preparation of Indium Pentetate Complex (111 In-DTPA)

    International Nuclear Information System (INIS)

    Shahhosseini, S.; Farshidfar, G.R.; Najafi, R.

    2000-01-01

    There is no organometallic compound of Indium know to exist naturally in the human body. However, a number of compounds prepared with 111 In have been evaluated for localization studies. The useful radioactive decay characteristics and the suitable chemical properties of the metal ion have drawn attention of many investigators resulting in the preparation of numerous 111 In labeled compounds for potential medical applications. One of them is 111 In-DTPA complex that is used for cerebral spinal fluid studies. In the present study, DTPA has been chelated with 111 In by employing various methods and then tested for its stability in vitro during storage and in human plasma. Three methods for the preparation of 11 1In-DTPA were used. In every method, labeling efficiency and radiochemical purity were determined by chromatography systems

  10. Indium doped zinc oxide thin films obtained by electrodeposition

    International Nuclear Information System (INIS)

    Machado, G.; Guerra, D.N.; Leinen, D.; Ramos-Barrado, J.R.; Marotti, R.E.; Dalchiele, E.A.

    2005-01-01

    Indium doped ZnO thin films were obtained by co-electrodeposition (precursor and dopant) from aqueous solution. XRD analysis showed typical patterns of the hexagonal ZnO structure for both doped and undoped films. No diffraction peaks of any other structure such as In 2 O 3 or In(OH) 3 were found. The incorporation of In into the ZnO film was verified by both EDS and XPS measurements. The bandgap energy of the films varied from 3.27 eV to 3.42 eV, increasing with the In concentration in the solution. This dependence was stronger for the less cathodic potentials. The incorporation of In into the film occurs as both, an In donor state in the ZnO grains and as an amorphous In 2 O 3 at the grain boundaries

  11. Photoconductivity in reactively evaporated copper indium selenide thin films

    Science.gov (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

    2014-01-01

    Copper indium selenide thin films of composition CuInSe2 with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe2 films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 106 cm-1 at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe2 thin films indicate its suitability in photovoltaic applications.

  12. The Hubble Space Telescope UV Legacy Survey of Galactic Globular Clusters - XII. The RGB bumps of multiple stellar populations

    Science.gov (United States)

    Lagioia, E. P.; Milone, A. P.; Marino, A. F.; Cassisi, S.; Aparicio, A. J.; Piotto, G.; Anderson, J.; Barbuy, B.; Bedin, L. R.; Bellini, A.; Brown, T.; D'Antona, F.; Nardiello, D.; Ortolani, S.; Pietrinferni, A.; Renzini, A.; Salaris, M.; Sarajedini, A.; van der Marel, R.; Vesperini, E.

    2018-04-01

    The Hubble Space Telescope UV Legacy Survey of Galactic Globular Clusters is providing a major breakthrough in our knowledge of globular clusters (GCs) and their stellar populations. Among the main results, we discovered that all the studied GCs host two main discrete groups consisting of first generation (1G) and second generation (2G) stars. We exploit the multiwavelength photometry from this project to investigate, for the first time, the Red Giant Branch Bump (RGBB) of the two generations in a large sample of GCs. We identified, with high statistical significance, the RGBB of 1G and 2G stars in 26 GCs and found that their magnitude separation as a function of the filter wavelength follows comparable trends. The comparison of observations to synthetic spectra reveals that the RGBB luminosity depends on the stellar chemical composition and that the 2G RGBB is consistent with stars enhanced in He and N and depleted in C and O with respect to 1G stars. For metal-poor GCs the 1G and 2G RGBB relative luminosity in optical bands mostly depends on helium content, Y. We used the RGBB observations in F606W and F814W bands to infer the relative helium abundance of 1G and 2G stars in 18 GCs, finding an average helium enhancement ΔY = 0.011 ± 0.002 of 2G stars with respect to 1G stars. This is the first determination of the average difference in helium abundance of multiple populations in a large number of clusters and provides a lower limit to the maximum internal variation of helium in GCs.

  13. Safety and efficacy of the bumped kinase inhibitor BKI-1553 in pregnant sheep experimentally infected with Neospora caninum tachyzoites

    Directory of Open Access Journals (Sweden)

    Roberto Sánchez-Sánchez

    2018-04-01

    Full Text Available Neospora caninum is one of the main causes of abortion in cattle, and recent studies have highlighted its relevance as an abortifacient in small ruminants. Vaccines or drugs for the control of neosporosis are lacking. Bumped kinase inhibitors (BKIs, which are ATP-competitive inhibitors of calcium dependent protein kinase 1 (CDPK1, were shown to be highly efficacious against several apicomplexan parasites in vitro and in laboratory animal models. We here present the pharmacokinetics, safety and efficacy of BKI-1553 in pregnant ewes and foetuses using a pregnant sheep model of N. caninum infection. BKI-1553 showed exposure in pregnant ewes with trough concentrations of approximately 4 μM, and of 1  μM in foetuses. Subcutaneous BKI-1553 administration increased rectal temperatures shortly after treatment, and resulted in dermal nodules triggering a slight monocytosis after repeated doses at short intervals. BKI-1553 treatment decreased fever in infected pregnant ewes already after two applications, resulted in a 37–50% reduction in foetal mortality, and modulated immune responses; IFNγ levels were increased early after infection and IgG levels were reduced subsequently. N. caninum was abundantly found in placental tissues; however, parasite detection in foetal brain tissue decreased from 94% in the infected/untreated group to 69–71% in the treated groups. In summary, BKI-1553 confers partial protection against abortion in a ruminant experimental model of N. caninum infection during pregnancy. In addition, reduced parasite detection, parasite load and lesions in foetal brains were observed. Keywords: Neospora caninum, Sheep, Pregnancy, Treatment, Protein kinase inhibitor, BKI-1553

  14. Technology

    Directory of Open Access Journals (Sweden)

    Xu Jing

    2016-01-01

    Full Text Available The traditional answer card reading method using OMR (Optical Mark Reader, most commonly, OMR special card special use, less versatile, high cost, aiming at the existing problems proposed a method based on pattern recognition of the answer card identification method. Using the method based on Line Segment Detector to detect the tilt of the image, the existence of tilt image rotation correction, and eventually achieve positioning and detection of answers to the answer sheet .Pattern recognition technology for automatic reading, high accuracy, detect faster

  15. Detection of a prosthetic aortic valvular abscess with indium-111-labeled leukocytes

    Energy Technology Data Exchange (ETDEWEB)

    Oates, E.; Sarno, R.C.

    1988-10-01

    An unsuspected annular abscess at the base of a prosthetic aortic valve in a patient with endocarditis was identified by indium-111-labeled leukocyte scintigraphy alone. This highly sensitive and specific technique expediently demonstrated the surgically proven inflammatory focus.

  16. Surface characterization of sol–gel derived indium tin oxide films on ...

    Indian Academy of Sciences (India)

    Unknown

    , India ... 1. Introduction. Indium tin oxide (ITO) coating on glass is an important item in the field ..... In addition, contamination of carbon from environment cannot be ruled ..... processing of ceramics, glasses and composites (eds) L L. Hench and ...

  17. Effect of indium addition in U-Zr metallic fuel on lanthanide migration

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yeon Soo, E-mail: yskim@anl.gov [Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439 (United States); Wiencek, T.; O' Hare, E.; Fortner, J.; Wright, A. [Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439 (United States); Cheon, J.S.; Lee, B.O. [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of)

    2017-02-15

    Advanced fast reactor concepts to achieve ultra-high burnup (∼50%) require prevention of fuel-cladding chemical interaction (FCCI). Fission product lanthanide accumulation at high burnup is substantial and significantly contributes to FCCI upon migration to the cladding interface. Diffusion barriers are typically used to prevent interaction of the lanthanides with the cladding. A more active method has been proposed which immobilizes the lanthanides through formation of stable compounds with an additive. Theoretical analysis showed that indium, thallium, and antimony are good candidates. Indium was the strongest candidate because of its low reactivity with iron-based cladding alloys. Characterization of the as-fabricated alloys was performed to determine the effectiveness of the indium addition in forming compounds with lanthanides, represented by cerium. Tests to examine how effectively the dopant prevents lanthanide migration under a thermal gradient were also performed. The results showed that indium effectively prevented cerium migration.

  18. Different magnetic properties of rhombohedral and cubic Ni2+ doped indium oxide nanomaterials

    Directory of Open Access Journals (Sweden)

    Qingbo Sun

    2011-12-01

    Full Text Available Transition metal ions doped indium oxide nanomaterials were potentially used as a kind of diluted magnetic semiconductors in transparent spintronic devices. In this paper, the influences of Ni2+ doped contents and rhombohedral or cubic crystalline structures of indium oxide on magnetic properties were investigated. We found that the magnetic properties of Ni2+ doped indium oxide could be transferred from room temperature ferromagnetisms to paramagnetic properties with increments of doped contents. Moreover, the different crystalline structures of indium oxide also greatly affected the room temperature ferromagnetisms due to different lattice constants and almost had no effects on their paramagnetic properties. In addition, both the ferromagnetic and paramagnetic properties were demonstrated to be intrinsic and not caused by impurities.

  19. Calibration of differential scanning calorimeters: A comparison between indium and diphenylacetic acid

    International Nuclear Information System (INIS)

    Charsley, E.L.; Laye, P.G.; Markham, H.M.; Le Goff, T.

    2010-01-01

    The close proximity in melting temperature of the LGC Limited DSC standards indium and diphenylacetic acid, has enabled a direct assessment to be made of any differences resulting from the use of a metal or an organic compound in the calibration of DSC equipment. Following calibration with indium, the equilibrium fusion temperatures for diphenylacetic acid, were determined by both the stepwise heating and extrapolation to zero heating rate methods. The results were in excellent agreement with the certificate values and established that indium may be used as a calibrant when making accurate DSC measurements on organic materials in the same temperature range and that it has the advantage that it is non-volatile and can be used a number of times without significant change. Similar agreement was obtained in the measurement of the enthalpy of fusion, although the larger heat capacity change on fusion of diphenylacetic acid resulted in a greater uncertainty than with indium.

  20. New compounds of indium(III) with 2,4'-bipyridine

    International Nuclear Information System (INIS)

    Czakis-Sulikowska, D.; Kaluzna-Czaplinska, J.

    2000-01-01

    The aim of present work was to obtain complexes of indium(III) with 2,4'-bipyridine and examine some of their physico-chemical properties (solubility, molar conductivity in methanol, IR spectra and thermal analysis)

  1. Effect of indium addition in U-Zr metallic fuel on lanthanide migration

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yeon Soo; Wiencek, T.; O' Hare, E.; Fortner, J.; Wright, A.; Cheon, J. S.; Lee, B. O.

    2017-02-01

    Advanced fast reactor concepts to achieve ultra-high burnup (~50%) require prevention of fuel-cladding chemical interaction (FCCI). Fission product lanthanide accumulation at high burnup is substantial and significantly contributes to FCCI upon migration to the cladding interface. Diffusion barriers are typically used to prevent interaction of the lanthanides with the cladding. A more active method has been proposed which immobilizes the lanthanides through formation of stable compounds with an additive. Theoretical analysis showed that indium, thallium, and antimony are good candidates. Indium was the strongest candidate because of its low reactivity with iron-based cladding alloys. Characterization of the as-fabricated alloys was performed to determine the effectiveness of the indium addition in forming compounds with lanthanides, represented by cerium. Tests to examine how effectively the dopant prevents lanthanide migration under a thermal gradient were also performed. The results showed that indium effectively prevented cerium migration.

  2. INDIUM AND ZINC MEDIATED ONE-ATOM CARBOCYCLE ENLARGEMENT IN WATER. (R822668)

    Science.gov (United States)

    AbstractSix-, seven-, eight-membered rings are enlarged by one carbon-atom into seven-, eight- and nine-membered ring derivatives respectively, via indium or zinc mediated reactions in aqueous medium.

  3. Properties of polycrystalline indium oxide in open air and in vacuum

    International Nuclear Information System (INIS)

    Solov'eva, A.E.; Zhdanov, V.A.; Markov, V.L.; Shvangiradze, R.R.

    1982-01-01

    Properties of polycrystalline indium oxide according to annealing temperature in open air and in vacuum are investigated. It is established that the indium oxide begins to change its chemical composition during the annealing in the open air from 1200 deg C, and in the vacuum - form 800 deg C. During the annealing of the samples in ths open air in the temperature range of 1200-1450 deg C the lattice of the indium oxide loses probably, only oxygen; this process is accompanied by change of the samples color, electrophysical properties, lattice parameter density. Cation sublattice is disturbed in the vacuum beginning from 900 deg C, which is accompanied by destruction of the color centers. X-ray density and the activation energy of the reduction accounting the formation of the color centers are calculated on the base of the X-ray data and the deviation from stoichiometry of the indium oxide depending on the annealing temperature in the open air

  4. Detection of a prosthetic aortic valvular abscess with indium-111-labeled leukocytes

    International Nuclear Information System (INIS)

    Oates, E.; Sarno, R.C.

    1988-01-01

    An unsuspected annular abscess at the base of a prosthetic aortic valve in a patient with endocarditis was identified by indium-111-labeled leukocyte scintigraphy alone. This highly sensitive and specific technique expediently demonstrated the surgically proven inflammatory focus

  5. Diagnostic compositions containing a chelate of radioactive indium and 8-hydroxyquinoline

    International Nuclear Information System (INIS)

    Goedemans, W.T.

    1981-01-01

    There are disclosed aqueous, radioassaying solutions of a chelate of radioactive indium and an 8-hydroxyquinoline, having an essential absence of an organic solvent, e.g., alcohol or chloroform. The solutions are useful in radioassaying warmblooded animals. (author)

  6. Evaluation of indium-111 colloid for radionuclide imaging of the abdominal lymph nodes

    International Nuclear Information System (INIS)

    Vieras, F.; Hamilton, R.F.; Grissom, M.P.; Kiepffer, R.F.; Vandergrift, J.F.

    1981-01-01

    The experimental evaluation of indium-111 colloid for imaging the para-aortic lymph nodes in animals is described and preliminary results obtained in human subjects. Serial lymphatic scintigraphy performed in beagle dogs following bilateral pedal subcutaneous injections of indium-111 colloid revealed good para-aortic lymph node visualization. A normal migration pattern of indium-111 colloid was also observed in human subjects following subcutaneous injection in the feet; there was clear visualization of the ileo-inguinal and para-aortic lymph nodes. Organ distribution studies for indium-111 colloid were performed in rats following unilateral pedal subcutaneous injection in rats; these results were used for calculating radiation dose estimates to various organs. The study demonstrates the feasibility of using 111 In-colloid clinically for abdominal lymphatic scintiography for the use of sup(99m)Tc-labelled colloids results in lower radiation doses. (U.K.)

  7. Indium--tin oxide films radio frequency sputtered from specially formulated high density indium--tin oxide targets

    International Nuclear Information System (INIS)

    Kulkarni, S.; Bayard, M.

    1991-01-01

    High density ITO (indium--tin oxide) targets doped with Al 2 O 3 and SiO 2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen--argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a sheet resistance of 15 Ω/sq for a thickness of 1100 A. Sputtering in an oxygen--argon gas mixture and annealing in air increased sheet resistance without a large effect on the transmission. Films sputtered in argon gas alone were transparent in the visible and the sheet resistance was found to be 100--180 Ω/sq for the same thickness, without annealing

  8. Kinetic study of indium-111 labelled platelets in idiopathic thrombocytopenic purpura

    International Nuclear Information System (INIS)

    Reiffers, J.; Vuillemin, L.; Broustet, A.; Ducassou, D.

    1982-01-01

    Labelling platelets with 111 Indium-oxine has advantages over the conventional 51 chromium method: labelling is more efficient and the radiations emitted almost exclusively consist of gamma-rays. Owing to these advantages, autologous platelets can be used for kinetic studies in patients with idiopathic thrombocytopenic purpura, even when thrombocytopenia is severe. 111 Indium labelling also provides accurate information on the sites of platelet destruction, which may help to predict the patient's response to splenectomy [fr

  9. Elastic properties of zinc, cadmium, bismuth, thallium, tin, lead and their binary alloys with indium

    International Nuclear Information System (INIS)

    Magomedov, A.M.

    1986-01-01

    Rates of propagation of longitudinal and transverse acoustic waves in samples as well as density of Tl, Pb, Sn, Bi, Cd, Zn and their binary alloys with indium are determined. The results obtained are used for calculation of elasticity constants of these materials. It is stated that concentration dependences of elasticity constants for indium alloys have non-linear character; negative deflection from the additive line is observed

  10. Polyol-mediated synthesis of copper indium sulphide by solvothermal process

    International Nuclear Information System (INIS)

    Gorai, S.; Chaudhuri, S.

    2005-01-01

    A simple polyol-mediated solvothermal method has been proposed to synthesize copper indium sulphide. XRD studies reveal that the products are well crystallized. SEM indicates rod-like (with different aspect ratio) and star-shaped flake-like morphology of the products. The products are also characterized by optical studies and compositional analysis (XRF). XRF results show the formation of stoichiometric and non-stoichiometric copper indium sulphides depending on the reaction conditions

  11. Tin–indium/graphene with enhanced initial coulombic efficiency and rate performance for lithium ion batteries

    International Nuclear Information System (INIS)

    Yang, Hongxun; Li, Ling

    2014-01-01

    Graphical abstract: -- Highlights: • Tin–indium/graphene hybrid was firstly synthesized. • Indium in the hybrid reduces charge transfer resistance of electrode. • Graphene can accommodate the volume change of nanoparticles during cycling. • Tin–indium/graphene hybrid shows enhanced initial coulombic efficiency. • Tin–indium/graphene hybrid shows enhanced rate capability. -- Abstract: Tin is an attractive anode material replacing the current commercial graphite for the next generation lithium ion batteries because of its high theoretical storage capacity and energy density. However, poor capacity retention caused by large volume changes during cycling, and low rate capability frustrate its practical application. In this study, a new ternary composite based on tin–indium alloy (Sn–In) and graphene nanosheet (GNS) was prepared via a facile solvothermal synthesis followed by thermal treatment in hydrogen and argon at 550 °C. Characterizations show that the tin–indium nanoparticles with about 100 nm in size were wrapped between the graphene nanosheets. As an anode for lithium ion batteries, the Sn–In/GNS composite exhibits a remarkably improved electrochemical performance in terms of lithium storage capacity (865.6 mAh g −1 at 100 mA g −1 rate), initial coulombic efficiency (78.6%), cycling stability (83.9% capacity retention after 50 cycles), and rate capability (493.2 mAh g −1 at 600 mA g −1 rate after 25 cycles) compared to Sn/GNS and Sn–In electrode. This improvement is attributed to the introduction of lithium activity metal, indium, which reduces the charge transfer resistance of electrode, and the graphene nanosheet which accommodates the volume change of tin–indium nanoparticles during cycling and improves electrical conductivity of material

  12. Laser- and gamma-induced transformations of optical spectra of indium-doped sodium borate glass

    CERN Document Server

    Kopyshinsky, O V; Zelensky, S E; Danilchenko, B A; Shakhov, O P

    2003-01-01

    The optical absorption and luminescence properties of indium-doped sodium borate glass irradiated by gamma-rays and by powerful UV lasers within the impurity-related absorption band are investigated experimentally. It is demonstrated that both the laser- and gamma-irradiation cause similar transformations of optical spectra in the UV and visible regions. The changes of the spectra observed are described with the use of a model which includes three types of impurity centres formed by differently charged indium ions.

  13. Indium oxide octahedrons based on sol–gel process enhance room temperature gas sensing performance

    Energy Technology Data Exchange (ETDEWEB)

    Mu, Xiaohui [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China); Chen, Changlong, E-mail: chem.chencl@hotmail.com [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China); Han, Liuyuan [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China); Shao, Baiqi [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Wei, Yuling [Instrumental Analysis Center, Qilu University of Technology, Jinan 250353, Shandong (China); Liu, Qinglong; Zhu, Peihua [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China)

    2015-07-15

    Highlights: • In{sub 2}O{sub 3} octahedron films are prepared based on sol–gel technique for the first time. • The preparation possesses merits of low temperature, catalyst-free and large production. • It was found that the spin-coating process in film fabrication was key to achieve the octahedrons. • The In{sub 2}O{sub 3} octahedrons could significantly enhance room temperature NO{sub 2} gas sensing performance. - Abstract: Indium oxide octahedrons were prepared on glass substrates through a mild route based on sol–gel technique. The preparation possesses characteristics including low temperature, catalyst-free and large production, which is much distinguished from the chemical-vapor-deposition based methods that usually applied to prepare indium oxide octahedrons. Detailed characterization revealed that the indium oxide octahedrons were single crystalline, with {1 1 1} crystal facets exposed. It was found that the spin-coating technique was key for achieving the indium oxide crystals with octahedron morphology. The probable formation mechanism of the indium oxide octahedrons was proposed based on the experiment results. Room temperature NO{sub 2} gas sensing measurements exhibited that the indium oxide octahedrons could significantly enhance the sensing performance in comparison with the plate-like indium oxide particles that prepared from the dip-coated gel films, which was attributed to the abundant sharp edges and tips as well as the special {1 1 1} crystal facets exposed that the former possessed. Such a simple wet-chemical based method to prepare indium oxide octahedrons with large-scale production is promising to provide the advanced materials that can be applied in wide fields like gas sensing, solar energy conversion, field emission, and so on.

  14. Isotope release cytotoxicity assay applicable to human tumors: the use of 111-indium

    Energy Technology Data Exchange (ETDEWEB)

    Frost, P; Wiltrout, R; Maciorowski, Z; Rose, N R

    1977-01-01

    We have demonstrated that human tumors can be labelled efficiently with the 111indium-oxine chelate. Subsequently, this isotope can be released by cytotoxic lymphoid cells. Both natural and induced cytotoxicity can be demonstrated utilizing this isotope release method. Because of the slow spontaneous release of 111indium and its efficient labelling of human tumor cells, this isotope release assay can be utilized in long-term cytotoxic assays in the study of human tumor immunology.

  15. Indium oxide octahedrons based on sol–gel process enhance room temperature gas sensing performance

    International Nuclear Information System (INIS)

    Mu, Xiaohui; Chen, Changlong; Han, Liuyuan; Shao, Baiqi; Wei, Yuling; Liu, Qinglong; Zhu, Peihua

    2015-01-01

    Highlights: • In 2 O 3 octahedron films are prepared based on sol–gel technique for the first time. • The preparation possesses merits of low temperature, catalyst-free and large production. • It was found that the spin-coating process in film fabrication was key to achieve the octahedrons. • The In 2 O 3 octahedrons could significantly enhance room temperature NO 2 gas sensing performance. - Abstract: Indium oxide octahedrons were prepared on glass substrates through a mild route based on sol–gel technique. The preparation possesses characteristics including low temperature, catalyst-free and large production, which is much distinguished from the chemical-vapor-deposition based methods that usually applied to prepare indium oxide octahedrons. Detailed characterization revealed that the indium oxide octahedrons were single crystalline, with {1 1 1} crystal facets exposed. It was found that the spin-coating technique was key for achieving the indium oxide crystals with octahedron morphology. The probable formation mechanism of the indium oxide octahedrons was proposed based on the experiment results. Room temperature NO 2 gas sensing measurements exhibited that the indium oxide octahedrons could significantly enhance the sensing performance in comparison with the plate-like indium oxide particles that prepared from the dip-coated gel films, which was attributed to the abundant sharp edges and tips as well as the special {1 1 1} crystal facets exposed that the former possessed. Such a simple wet-chemical based method to prepare indium oxide octahedrons with large-scale production is promising to provide the advanced materials that can be applied in wide fields like gas sensing, solar energy conversion, field emission, and so on

  16. Positive indium-III bone marrow scan in metastatic breast carcinoma. Case report

    International Nuclear Information System (INIS)

    LaManna, M.M.; Hyzinski, M.; Swami, V.K.; Parker, J.A.

    1984-01-01

    Indium is generally presumed to localize in the bone marrow within the erythroid cell line. Fibrosis, inflammation, lymphoma, extended field radiation, chemotherapy, or combinations of both treatment modalities generally depress the uptake of indium by the marrow in a complex fashion. We report a case of metastatic breast carcinoma and pancytopenia in which the In-111 scan appeared qualitatively similar to a Tc-99m MDP bone scan. Findings were confirmed by bone marrow biopsy

  17. Multilayer microfluidic systems with indium-tin-oxide microelectrodes for studying biological cells

    International Nuclear Information System (INIS)

    Wu, Hsiang-Chiu; Chen, Hsin; Lyau, Jia-Bo; Lin, Min-Hsuan; Chuang, Yung-Jen

    2017-01-01

    Contemporary semiconductor and micromachining technologies have been exploited to develop lab-on-a-chip microsystems, which enable parallel and efficient experiments in molecular and cellular biology. In these microlab systems, microfluidics play an important role for automatic transportation or immobilization of cells and bio-molecules, as well as for separation or mixing of different chemical reagents. However, seldom microlab systems allow both morphology and electrophysiology of biological cells to be studied in situ . This kind of study is important, for example, for understanding how neuronal networks grow in response to environmental stimuli. To fulfill this application need, this paper investigates the possibility of fabricating multi-layer photoresists as microfluidic systems directly above a glass substrate with indium-tin-oxide (ITO) electrodes. The microfluidic channels are designed to guide and trap biological cells on top of ITO electrodes, through which the electrical activities of cells can be recorded or elicited. As both the microfluidic system and ITO electrodes are transparent, the cellular morphology is observable easily during electrophysiological studies. Two fabrication processes are proposed and compared. One defines the structure and curing depth of each photoresist layer simply by controlling the exposure time in lithography, while the other further utilizes a sacrificial layer to defines the structure of the bottom layer. The fabricated microfluidic system is proved bio-compatible and able to trap blood cells or neurons. Therefore, the proposed microsystem will be useful for studying cultured cells efficiently in applications such as drug-screening. (paper)

  18. Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

    Science.gov (United States)

    Song, Yang; Katsman, Alexander; Butcher, Amy L.; Paine, David C.; Zaslavsky, Alexander

    2017-10-01

    Thin film transistors (TFTs) based on transparent oxide semiconductors, such as indium zinc oxide (IZO), are of interest due to their improved characteristics compared to traditional a-Si TFTs. Previously, we reported on top-gated IZO TFTs with an in-situ formed HfO2 gate insulator and IZO active channel, showing high performance: on/off ratio of ∼107, threshold voltage VT near zero, extracted low-field mobility μ0 = 95 cm2/V·s, and near-perfect subthreshold slope at 62 mV/decade. Since device stability is essential for technological applications, in this paper we report on the temporal and voltage stress stability of IZO TFTs. Our devices exhibit a small negative VT shift as they age, consistent with an increasing carrier density resulting from an increasing oxygen vacancy concentration in the channel. Under gate bias stress, freshly annealed TFTs show a negative VT shift during negative VG gate bias stress, while aged (>1 week) TFTs show a positive VT shift during negative VG stress. This indicates two competing mechanisms, which we identify as the field-enhanced generation of oxygen vacancies and the field-assisted migration of oxygen vacancies, respectively. A simplified kinetic model of the vacancy concentration evolution in the IZO channel under electrical stress is provided.

  19. Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique

    Science.gov (United States)

    Qiang, Lei; Liang, Xiaoci; Cai, Guangshuo; Pei, Yanli; Yao, Ruohe; Wang, Gang

    2018-06-01

    Indium zinc oxide (IZO) thin film transistor (TFT) deposited by solution method is of considerable technological interest as it is a key component for the fabrication of flexible and cheap transparent electronic devices. To obtain a principal understanding of physical properties of solution-processed IZO TFT, a new drain current model that account for the charge transport is proposed. The formulation is developed by incorporating the effect of gate voltage on mobility and threshold voltage with the carrier charges. It is demonstrated that in IZO TFTs the below threshold regime should be divided into two sections: EC - EF > 3kT and EC - EF ≤ 3kT, where kT is the thermal energy, EF and EC represent the Fermi level and the conduction band edge, respectively. Additionally, in order to describe conduction mechanisms more accurately, the extended mobility edge model is conjoined, which can also get rid of the complicated and lengthy computations. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin film circuits.

  20. Environmental and health aspects of copper-indium-diselenide thin-film photovoltaic modules

    International Nuclear Information System (INIS)

    Steinberger, H.; Thumm, W.; Freitag, R.; Moskowitz, P.D.; Chapin, R.

    1994-01-01

    Copper-indium-diselenide (CIS) is a semiconductor compound that can be used to produce thin-film photovoltaic modules. There is on-going research being conducted by various federal agencies and private industries to demonstrate the commercial viability of this material. Because this is a new technology, and because scant information about the health and environmental hazards associated with the use of this material is available, studies have been initiated to characterize the environmental mobility and environmental toxicology of this compound. The objective of these studies is to identify the environmental and health hazards associated with the production, use, and disposal of CIS thin-film photovoltaic modules. The program includes both experimental and theoretical components. Theoretical studies are being undertaken to estimate material flows through the environment for a range of production options as well as use and disposal scenarios. The experimental programs characterize the physical, chemical e.g. leachability and biological parameters e.g. EC 50 in daphnia and algae, and feeding studies in rats

  1. Copper-assisted shape control in colloidal synthesis of indium oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Selishcheva, Elena; Parisi, Juergen; Kolny-Olesiak, Joanna, E-mail: joanna.kolny@uni-oldenburg.de [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics (Germany)

    2012-02-15

    Indium oxide is an important n-type transparent semiconductor, finding application in solar cells, sensors, and optoelectronic devices. We present here a novel non-injection synthesis route for the preparation of colloidal indium oxide nanocrystals by using oleylamine (OLA) as ligand and as solvent. Indium oxide with cubic crystallographic structure is formed in a reaction between indium acetate and OLA, the latter is converted to oleylamide during the synthesis. The shape of the nanocrystals can be influenced by the addition of copper ions. When only indium (III) acetate is used as precursor flower-shaped indium oxide nanoparticles are obtained. Addition of copper salts such as copper (I) acetate, copper (II) acetate, copper (II) acetylacetonate, or copper (I) chloride, under otherwise identical reaction conditions changes the shape of nanoparticles to quasi-spherical or elongated. The anions, except for chloride, do not influence the shape of the resulting nanocrystals. This finding suggests that adsorption of copper ions on the In{sub 2}O{sub 3} surface during the nanoparticles growth is responsible for shape control, whereas changes in the reactivity of the In cations caused by the presence of different anions play a secondary role. X-ray diffraction, transmission electron microscopy, nuclear magnetic resonance, energy dispersive X-ray analysis, and UV-Vis-absorption spectroscopy are used to characterize the samples.

  2. Copper-assisted shape control in colloidal synthesis of indium oxide nanoparticles

    International Nuclear Information System (INIS)

    Selishcheva, Elena; Parisi, Jürgen; Kolny-Olesiak, Joanna

    2012-01-01

    Indium oxide is an important n-type transparent semiconductor, finding application in solar cells, sensors, and optoelectronic devices. We present here a novel non-injection synthesis route for the preparation of colloidal indium oxide nanocrystals by using oleylamine (OLA) as ligand and as solvent. Indium oxide with cubic crystallographic structure is formed in a reaction between indium acetate and OLA, the latter is converted to oleylamide during the synthesis. The shape of the nanocrystals can be influenced by the addition of copper ions. When only indium (III) acetate is used as precursor flower-shaped indium oxide nanoparticles are obtained. Addition of copper salts such as copper (I) acetate, copper (II) acetate, copper (II) acetylacetonate, or copper (I) chloride, under otherwise identical reaction conditions changes the shape of nanoparticles to quasi-spherical or elongated. The anions, except for chloride, do not influence the shape of the resulting nanocrystals. This finding suggests that adsorption of copper ions on the In 2 O 3 surface during the nanoparticles growth is responsible for shape control, whereas changes in the reactivity of the In cations caused by the presence of different anions play a secondary role. X-ray diffraction, transmission electron microscopy, nuclear magnetic resonance, energy dispersive X-ray analysis, and UV–Vis-absorption spectroscopy are used to characterize the samples.

  3. Polarographic studies about indium (III) behaviour in aqueous media of sodium azide

    International Nuclear Information System (INIS)

    Tokoro, R.

    1988-01-01

    The present study shows some polarographic behavior of indium (III) in azide media that is close those observed in a thiocyanate solution. The presence of azide ligand decreases the overpotential in the discharge of indium whose catalytic character can be explained by formation of an azide bridge between electrode and indium (III) increasing the speed of electron transfer. The discharge of indium in azide media is diffusion controlled. As the azide concentration is increased the half wave potential displaces in the cathodic direction. This displacement is due to complex formation. The number of electrons, n, involved in the total process was estimates by the reversible polarographic equation to be 2,7. The potentiostatic coulometry of indium in azide/hydrazoic acid buffer showed a catalytic process where the chemistry regeneration was performed by reaction of hydrazoic acid and indium amalgam. The electrochemistry evidence was the constancy of current as the electrolysis proceeded. The chemistry aspect was the presence of ammonium cation in electrolysed solution. The catalytic process with chemistry regeneration and the formation of a bridge by azide could explain the higher value of current in azide media compared to perchlorate solution. (author) [pt

  4. The effect of annealing ambient on surface segregation in indium implanted sapphire

    International Nuclear Information System (INIS)

    Sood, D.K.; Victoria University of Technology, Melbourne; Zhou, W.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai Institute of Metallurgy; Cao, D.X.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai, SH

    1991-01-01

    A systematic study of the effect of annealing ambient on both indium surface segregation and lattice damage recovery of single crystal Al 2 O 3 has been done by performing 1 hour anneals at 800 deg C for the samples identically implanted with indium ions at 100keV energy to a high dose of 5x10 16 ions/cm 2 . Following solid phase epitaxial re-crystallization of amorphous layer, the indium dopant shows rapid thermal migration. The indium redistribution consists of 2 parts: 1. appreciable broadening corresponding to diffusion within the amorphous layer, and 2. indium segregation to the free surface to form In 2 O 3 , or escape out of the surface to sublime into the surrounding ambient. Lattice damage recovery depends on indium concentration profile in amorphous layer of Al 2 O 3 which is directly influenced by the annealing ambient. It is confirmed that the presence of moisture or oxygen in annealing ambient results in In 2 O 3 formation on the surface. (author). 6 refs.; 3 figs.; 1 tab

  5. Recent developments in MrBUMP: better search-model preparation, graphical interaction with search models, and solution improvement and assessment.

    Science.gov (United States)

    Keegan, Ronan M; McNicholas, Stuart J; Thomas, Jens M H; Simpkin, Adam J; Simkovic, Felix; Uski, Ville; Ballard, Charles C; Winn, Martyn D; Wilson, Keith S; Rigden, Daniel J

    2018-03-01

    Increasing sophistication in molecular-replacement (MR) software and the rapid expansion of the PDB in recent years have allowed the technique to become the dominant method for determining the phases of a target structure in macromolecular X-ray crystallography. In addition, improvements in bioinformatic techniques for finding suitable homologous structures for use as MR search models, combined with developments in refinement and model-building techniques, have pushed the applicability of MR to lower sequence identities and made weak MR solutions more amenable to refinement and improvement. MrBUMP is a CCP4 pipeline which automates all stages of the MR procedure. Its scope covers everything from the sourcing and preparation of suitable search models right through to rebuilding of the positioned search model. Recent improvements to the pipeline include the adoption of more sensitive bioinformatic tools for sourcing search models, enhanced model-preparation techniques including better ensembling of homologues, and the use of phase improvement and model building on the resulting solution. The pipeline has also been deployed as an online service through CCP4 online, which allows its users to exploit large bioinformatic databases and coarse-grained parallelism to speed up the determination of a possible solution. Finally, the molecular-graphics application CCP4mg has been combined with MrBUMP to provide an interactive visual aid to the user during the process of selecting and manipulating search models for use in MR. Here, these developments in MrBUMP are described with a case study to explore how some of the enhancements to the pipeline and to CCP4mg can help to solve a difficult case.

  6. Synthesis of indium nanoclusters and formation of thin film contacts on plastic substrates for organic and flexible electronics applications

    International Nuclear Information System (INIS)

    Shi, Frank F; Bulkowski, Michal; Hsieh, K C

    2007-01-01

    In this work, we described the processes of synthesizing free-standing indium nanoclusters using inverse micelles and microemulsions as well as synthesizing organic-encapsulated indium nanoclusters using alkanethiols as the organic encapsulants. The synthesized organic-encapsulated indium nanoclusters have demonstrated the feasibilities to be used as plastic compatible soft metal contacts for emerging organic devices. The homogeneously distributed indium nanoclusters with sizes of 10-30 nm have been fabricated on a few different plastic substrates. By changing the alkanethiol carbon chain length and the sizes of the indium nanoclusters, the annealing temperature required to form low-resistance indium thin film conductors has been reduced to 80-100 deg. C, which is acceptable for a variety of organic thin films

  7. Indium recovery from acidic aqueous solutions by solvent extraction with D2EHPA: a statistical approach to the experimental design

    Directory of Open Access Journals (Sweden)

    Fortes M.C.B.

    2003-01-01

    Full Text Available This experimental work presents the optimization results of obtaining a high indium concentration solution and minimum iron poisoning by solvent extraction with D2EHPA solubilized in isoparaffin and exxsol. The variables studied in the extraction step were D2EHPA concentration, acidity of the aqueous phase and time of contact between phases. Different hydrochloric and sulfuric acid concentrations were studied for the stripping step. The optimum experimental conditions resulted in a solution with 99% indium extraction and less than 4% iron. The construction of a McCabe-Thiele diagram indicated two theoretical countercurrent stages for indium extraction and at least six stages for indium stripping. Finally, the influence of associated metals found in typical sulfate leach liquors from zinc plants was studied. Under the experimental conditions for maximum indium extraction, 96% indium extraction was obtained, iron extraction was about 4% and no Ga, Cu and Zn were co-extracted.

  8. Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials

    Directory of Open Access Journals (Sweden)

    Anna M. K. Gustafsson

    2015-01-01

    Full Text Available Recycling of the semiconductor material copper indium gallium diselenide (CIGS is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric acid solutions of dissolved selenium-depleted material. Suitable potentials for the reduction of copper and indium were determined to be −0.5 V and −0.9 V (versus the Ag/AgCl reference electrode, respectively, using cyclic voltammetry. Electrodeposition of first copper and then indium from a solution containing the dissolved residue from the selenium separation and ammonium chloride in 1 M HCl gave a copper yield of 100.1 ± 0.5% and an indium yield of 98.1 ± 2.5%. The separated copper and indium fractions contained no significant contamination of the other elements. Gallium remained in solution together with a small amount of indium after the separation of copper and indium and has to be recovered by an alternative method since electrowinning from the chloride-rich acid solution was not effective.

  9. Spectroscopic investigation of indium halides as substitudes of mercury in low pressure discharges for lighting applications

    Energy Technology Data Exchange (ETDEWEB)

    Briefi, Stefan

    2012-05-22

    Low pressure discharges with indium halides as radiator are discussed as substitutes for hazardous mercury in conventional fluorescent lamps. In this work, the applicability of InBr and InCl in a low pressure discharge light source is investigated. The aim is to identify and understand the physical processes which determine the discharge characteristics and the efficiency of the generated near-UV emission of the indium halide molecule and of the indium atom which is created due to dissociation processes in the plasma. As discharge vessels sealed cylindrical quartz glass tubes which contain a defined amount of indium halide and a rare gas are used. Preliminary investigations showed that for a controlled variation of the indium halide density a well-defined cold spot setup is mandatory. This was realized in the utilized experimental setup. The use of metal halides raises the issue, that power coupling by internal electrodes is not possible as the electrodes would quickly be eroded by the halides. The comparison of inductive and capacitive RF-coupling with external electrodes revealed that inductively coupled discharges provide higher light output and much better long term stability. Therefore, all investigations are carried out using inductive RF-coupling. The diagnostic methods optical emission and white light absorption spectroscopy are applied. As the effects of absorption-signal saturation and reabsorption of emitted radiation within the plasma volume could lead to an underestimation of the determined population densities by orders of magnitude, these effects are considered in the data evaluation. In order to determine the electron temperature and the electron density from spectroscopic measurements, an extended corona model as population model of the indium atom has been set up. A simulation of the molecular emission spectra has been implemented to investigate the rovibrational population processes of the indium halide molecules. The impact of the cold spot

  10. A Solid-Contact Indium(III) Sensor based on a Thiosulfinate Ionophore Derived from Omeprazole

    Energy Technology Data Exchange (ETDEWEB)

    Abbas, Mohammad Nooredeen; Hend Samy Amer [National Research Centre, Cairo (Egypt)

    2013-04-15

    A novel solid-contact indium(III)-selective sensor based on bis-(1H-benzimidazole-5-methoxy-2-[(4-methoxy-3, 5-dimethyl-1-pyridinyl) 2-methyl]) thiosulfinate, known as an omeprazole dimer (OD) and a neutral ionophore, was constructed, and its performance characteristics were evaluated. The sensor was prepared by applying a membrane cocktail containing the ionophore to a graphite rod pre-coated with polyethylene dioxythiophene (PEDOT) conducting polymer as the ion-to-electron transducer. The membrane contained 3.6% OD, 2.3% oleic acid (OA) and 62% dioctyl phthalate (DOP) as the solvent mediator in PVC and produced a good potentiometric response to indium(III) ions with a Nernstian slope of 19.09 mV/decade. The constructed sensor possessed a linear concentration range from 3 Χ 10{sup -7} to 1 Χ 10{sup -2} M and a lower detection limit (LDL) of 1 Χ 10{sup -7} M indium(III) over a pH range of 4.0-7.0. It also displayed a fast response time and good selectivity for indium(III) over several other ions. The sensor can be used for longer than three months without any considerable divergence in potential. The sensor was utilized for direct and flow injection potentiometric (FIP) determination of indium(III) in alloys. The parameters that control the flow injection method were optimized. Indium(III) was quantitatively recovered, and the results agreed with those obtained using atomic absorption spectrophotometry, as confirmed by the f and t values. The sensor was also utilized as an indicator electrode for the potentiometric titration of fluoride in the presence of chloride, bromide, iodide and thiocyanate ions using indium(III) nitrate as the titrant.

  11. Alterations in an indium-111 Fab' under conditions of utilization

    International Nuclear Information System (INIS)

    Halpern, S.E.; Sudora, E.; Tarburton, J.P.; Hagar, P.

    1992-01-01

    This study was conducted to investigate alterations that occur in an indium/111 Fab' of a monoclonal antibody following its in vivo administration. Patients were infused with 111 In-Fab' of the monoclonal antibody ZCE-025. Serum and urine specimens were collected from these pateients. Starting materials, serum, urine and controls samples were studied by electrophoresis. Animal distribution studies were performed in normal Balb/c mice and, in some cases, nude mice bearing a carcinoembryonic antigen (CEA)/producing human colon tumour since the antibody targets CEA. The studies indicated that the molecule circulated almost totally intact for at least 4 h and to a considerable extent for 24 h, with some evidence for in vivo fragmentation by 24 h. Evidence was also obtained suggesting the formation of a high molecular weight species in some patients. Shortly after infusion, some of the 111 In in the urine appeared as the intact Fab', but within hours the majority migrated electro-phoretically as low molecular weight species. We conclude that while the majority of the 111 In-Fab' of this particular antibody remains intact and immunoreactive following its administration, the molecule is structurally changed to some degree shortly after its infusion into humans. Since each monoclonal antibody is unique, the degree and rapidity of degradation of its Fab' in vivo could vary markedly from the above and possibly adversely effect its utility as a radiopharmaceutical. (orig.)

  12. Polycrystalline Mn-alloyed indium tin oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Schmidt, Heidemarie; Xu, Qingyu; Vinnichenko, Mykola; Kolitsch, Andreas; Helm, Manfred; Iacomi, Felicia

    2008-01-01

    Magnetic ITO films are interesting for integrating ITO into magneto-optoelectronic devices. We investigated n-conducting indium tin oxide (ITO) films with different Mn doping concentration which have been grown by chemical vapour deposition using targets with the atomic ratio In:Sn:Mn=122:12:0,114:12:7, and 109:12:13. The average film roughness ranges between 30 and 50 nm and XRD patterns revealed a polycrystalline structure. Magnetotransport measurements revealed negative magnetoresistance for all the samples, but high field positive MR can be clearly observed at 5 K with increasing Mn doping concentration. Spectroscopic ellipsometry (SE) has been used to prove the existence of midgap states in the Mn-alloyed ITO films revealing a transmittance less than 80%. A reasonable model for the ca. 250 nm thick Mn-alloyed ITO films has been developed to extract optical constants from SE data below 3 eV. Depending on the Mn content, a Lorentz oscillator placed between 1 and 2 eV was used to model optical absorption below the band gap

  13. Surface energy for electroluminescent polymers and indium-tin-oxide

    International Nuclear Information System (INIS)

    Zhong Zhiyou; Yin Sheng; Liu Chen; Zhong Youxin; Zhang Wuxing; Shi Dufang; Wang Chang'an

    2003-01-01

    The contact angles on the thin films of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) and indium-tin-oxide (ITO) were measured by the sessile-drop technique. The surface energies of the films were calculated using the Owens-Wendt (OW) and van Oss-Chaudhury-Good (vOCG) approaches. The overall total surface energies of MEH-PPV and the as-received ITO were 30.75 and 30.07 mJ/m 2 , respectively. Both approaches yielded almost the same surface energies. The surface energies were mainly contributed from the dispersion interactions or Lifshitz-van der Waals (LW) interactions for both MEH-PPV and ITO. The changes in the contact angles and surface energies of the ITO films, due to different solvent cleaning processes and oxygen plasma treatments, were analyzed. Experimental results revealed that the total surface energy of the ITO films increased after various cleaning processes. In comparison with different solvents used in this study, we found that methanol is an effective solvent for ITO cleaning, as a higher surface energy was observed. ITO films treated with oxygen plasma showed the highest surface energy. This work demonstrated that contact angle measurement is a useful method to diagnose the cleaning effect on ITO films

  14. 111indium-antimyosin immunoscintigraphy in suspected myocarditis

    International Nuclear Information System (INIS)

    Krause, T.; Schuemichen, C.; Joseph, A.; Moser, E.; Zeiher, A.

    1991-01-01

    111 Indium-monoclonal antimyosin scans were carried out in 21 patients with suspected myocarditis, confirmed by reduced ejection volume, pericardial effusion and clinical follow up in 12 patients. Coronary heart disease was excluded angiographically in all cases. Quantitative evaluation of myocardial 111 In-antimyosin accumulation 48 hours after injection showed a pathological uptake in 10/12 patients with increased heart/lung ratios (Q 48 >1,58). Ratios were also elevated in 2 patients with cardiomyopathy, 2 suffering from vasculitis and 1 with dermatomyositis. Four patients without proven cardiac disease had normal ratios (Q 48 ≤1,58). Examination after 24 hours was of limited value, depending on the residual blood pool activity. Visual analysis of the scans showed a high interobserver variation despite a positive correlation with quantitative analysis (48 h p.i.: r=0,72; p 111 In-antimyosin scan as a screening method prior to myocardial biopsy. However, scintigraphy cannot definitely elucidate the cause of myocardial damage. Therefore, myocardial biopsy is still recommended after positive antimyosin scans. (orig.) [de

  15. Supramolecular compounds of indium sulfates with nitrogen-containing cations

    International Nuclear Information System (INIS)

    Petrosyants, S.P.; Ilyukhin, A.B.; Ketsko, V.A.

    2006-01-01

    Compounds with a general formula [Cat][In(H 2 O) n (SO 4 ) 2 ] x · mH 2 O (where Cat = C(NH 2 ) 3 , H(2,2'-Bipy), H 2 (4,4'-Bipy), H 2 [Py(CH 2 ) 3 Py], and H 3 N(CH 2 ) 6 NH 3 ) were synthesized and identified from the elemental analysis, IR, and thermogravimetric analysis data. X-ray diffraction analysis of crystalline [C(NH 2 ) 3 ][In(H 2 O) 2 (SO 4 ) 2 ] complex has shown that the polymer chains of In aqua sulfate form ensembles with guanidinium ions. The structure of [H 2 (4,4'-Bipy)][In 2 (H 2 O) 6 (SO 4 ) 4 ] · 2H 2 O consists of the dimeric anions of indium sulfate. The coordination sphere of In includes three O atoms of three SO 4 groups and three O atoms of water molecules. The dimers are united into framework by diprotonated Bipy cations [ru

  16. Band gap engineering of indium zinc oxide by nitrogen incorporation

    Energy Technology Data Exchange (ETDEWEB)

    Ortega, J.J., E-mail: jjosila@hotmail.com [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esq. Paseo la Bufa, Fracc. Progreso, C.P. 98060 Zacatecas (Mexico); Doctorado Institucional de Ingeniería y Ciencia de Materiales, Universidad Autónoma de San Luis Potosí, Av. Salvador Nava, Zona Universitaria, C.P. 78270 San Luis Potosí (Mexico); Aguilar-Frutis, M.A.; Alarcón, G. [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del Instituto Politécnico Nacional, Unidad Legaría, Calz. Legaría No. 694, Col. Irrigación, C.P. 11500 México D.F. (Mexico); Falcony, C. [Departamento de Física, Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional campus Zacatenco, Av. Instituto Politécnico Nacional 2508, Col. San Pedro Zacatenco, C.P. 07360 México D.F. (Mexico); and others

    2014-09-15

    Highlights: • IZON thin films were deposited by RF reactive sputtering at room temperature. • The effects of nitrogen on physical properties of IZO were analyzed. • Optical properties of IZON were studied by SE and UV–vis spectroscopy. • Adachi and classical parameters were quantitative and qualitatively congruent. • Nitrogen induces a gradual narrowing band gap from 3.5 to 2.5 eV on IZON films. - Abstract: The effects of nitrogen incorporation in indium zinc oxide films, as grown by RF reactive magnetron sputtering, on the structural, electrical and optical properties were studied. It was determined that the variation of the N{sub 2}/Ar ratio, in the reactive gas flux, was directly proportional to the nitrogen percentage measured in the sample, and the incorporated nitrogen, which substituted oxygen in the films induces changes in the band gap of the films. This phenomenon was observed by measurement of absorption and transmission spectroscopy in conjunction with spectral ellipsometry. To fit the ellipsometry spectra, the classical and Adachi dispersion models were used. The obtained optical parameters presented notable changes related to the increment of the nitrogen in the film. The band gap narrowed from 3.5 to 2.5 eV as the N{sub 2}/Ar ratio was increased. The lowest resistivity obtained for these films was 3.8 × 10{sup −4} Ω cm with a carrier concentration of 5.1 × 10{sup 20} cm{sup −3}.

  17. Band gap engineering of indium zinc oxide by nitrogen incorporation

    International Nuclear Information System (INIS)

    Ortega, J.J.; Aguilar-Frutis, M.A.; Alarcón, G.; Falcony, C.

    2014-01-01

    Highlights: • IZON thin films were deposited by RF reactive sputtering at room temperature. • The effects of nitrogen on physical properties of IZO were analyzed. • Optical properties of IZON were studied by SE and UV–vis spectroscopy. • Adachi and classical parameters were quantitative and qualitatively congruent. • Nitrogen induces a gradual narrowing band gap from 3.5 to 2.5 eV on IZON films. - Abstract: The effects of nitrogen incorporation in indium zinc oxide films, as grown by RF reactive magnetron sputtering, on the structural, electrical and optical properties were studied. It was determined that the variation of the N 2 /Ar ratio, in the reactive gas flux, was directly proportional to the nitrogen percentage measured in the sample, and the incorporated nitrogen, which substituted oxygen in the films induces changes in the band gap of the films. This phenomenon was observed by measurement of absorption and transmission spectroscopy in conjunction with spectral ellipsometry. To fit the ellipsometry spectra, the classical and Adachi dispersion models were used. The obtained optical parameters presented notable changes related to the increment of the nitrogen in the film. The band gap narrowed from 3.5 to 2.5 eV as the N 2 /Ar ratio was increased. The lowest resistivity obtained for these films was 3.8 × 10 −4 Ω cm with a carrier concentration of 5.1 × 10 20 cm −3

  18. Indium(III) complexes with some salicylidene aromatic Schiff bases

    International Nuclear Information System (INIS)

    Mahmoud, M.R.; Issa, I.M.; El-Gyar, S.A.

    1980-01-01

    In(III) complexes with salicylidene aromatic Schiff bases have been prepared. The nature of the complexes has been studied by microanalysis of the solid complexes, conductometric titration, uv and ir spectrophotometric measurements. The complexes are of the type 1 : 1 and 2 : 1 [Ligand : In(III)] depending upon the Schiff base. The tendency of the salicylidene Schiff base molecule towards complex formation with In(III) is found to depend largely on the strength of the intramolecular hydrogen bound established between the aldehydic OH group and C = N. Furthermore, it is concluded that these Schiff bases coordinate to In(III) as tri- or bidentate ligands depending upon the molecular structure of the Schiff base (not as monodentate ligand as previously described). The high molar absorbance of the 1 : 2 In(II) complex with salicylidene-o-hydroxyaniline I (17,800 mo1 -1 cm 2 ) can be applied for the micro determination of small amounts of Indium as low as 0.57 anti g/m1 solution. (author)

  19. Electrical and optical properties of amorphous indium zinc oxide films

    International Nuclear Information System (INIS)

    Ito, N.; Sato, Y.; Song, P.K.; Kaijio, A.; Inoue, K.; Shigesato, Y.

    2006-01-01

    Valence electron control and electron transport mechanisms on the amorphous indium zinc oxide (IZO) films were investigated. The amorphous IZO films were deposited by dc magnetron sputtering using an oxide ceramic IZO target (89.3 wt.% In 2 O 3 and 10.7 wt.% ZnO). N-type impurity dopings, such as Sn, Al or F, could not lead to the increase in carrier density in the IZO. Whereas, H 2 introduction into the IZO deposition process was confirmed to be effective to increase carrier density. By 30% H 2 introduction into the deposition process, carrier density increased from 3.08 x 10 2 to 7.65 x 10 2 cm -3 , which must be originated in generations of oxygen vacancies or interstitial Zn 2+ ions. Decrease in the transmittance in the near infrared region and increase in the optical band gap were observed with the H 2 introduction, which corresponded to the increase in carrier density. The lowest resistivity of 3.39 x 10 -4 Ω cm was obtained by 10% H 2 introduction without substrate heating during the deposition

  20. Prosthetic graft infection: limitations of indium white blood cell scanning

    International Nuclear Information System (INIS)

    Brunner, M.C.; Mitchell, R.S.; Baldwin, J.C.; James, D.R.; Olcott, C. IV; Mehigan, J.T.; McDougall, I.R.; Miller, D.C.

    1986-01-01

    The lack of a rapid, noninvasive, and accurate method to confirm or rule out prosthetic graft infection continues to constitute a compelling and vexing clinical problem. A host of adjunctive diagnostic techniques has been used in the past, but early promising results subsequently have usually not yielded acceptable sensitivity (reflecting false negatives) and specificity (reflecting false positive) data. White blood cell (WBC) indium 111 scanning has recently been added to this list. The utility and accuracy of 111 In WBC scans were assessed by retrospective review of WBC scan results in 70 patients undergoing evaluation for possible prosthetic graft infection over a 7-year period. Operative and autopsy data (mean follow-up, 18 months for survivors with negative scans) were used to confirm the 22 positive, 45 negative, and three equivocal WBC scans. The false positive rate (+/- 70% confidence limits) was 36% +/- 6% (n = 8) among the 22 patients with positive scans (44% +/- 6% [11 of 25] if the three equivocal scans are included as false positive), yielding a specificity of 85% +/- 5% and an overall accuracy rate of 88% +/- 4% (80% +/- 5% and 84% +/- 5%, respectively, if the three equivocal cases are considered as false positive). All three patients with equivocal scans ultimately were judged not to have prosthetic graft infection. As implied by the high accuracy rate, the sensitivity of the test was absolute (100% [14 of 14]); there were no false negative results

  1. The angular distributions of sputtered indium atoms at different temperature

    International Nuclear Information System (INIS)

    Zhang Jiping; Wang Zhenxia; Tao Zhenlan; Pan Jisheng

    1993-01-01

    The effect of temperature and surface topography on the angular distribution of indium atoms was studied under bombardment by 2T KeV Ar + ions at normal incidence. Experiments were carried out on two samples, A and B, at 25 o C and 70 o C respectively. The function Y(θ) = a cosθ + b cos n θ, where θ is the sputtering angle, was found to fit the experimental data. The term (a cos θ) corresponds to the cosine distribution predicted by random collision cascade theory, and the term (b cos n θ) is dependent on factors such as the surface topography. For sample A, a∼b, whereas for sample B a< b. The surface of A consisted of flat and pebble like regions of almost equal area while the surface of B was more cratered. An explanation of the fitting values of a,b and n is given in terms of the shielding effects of the different structures. (UK)

  2. Active methods of preventing bumps in situations where the longwall face advances to and crosses a roadway in thick coal beds

    Energy Technology Data Exchange (ETDEWEB)

    Loboda, C

    1978-01-01

    The method was analyzed in the Wujek coal mine, where the coal bed is located at 600 m and was 5.3 m to 5.7 m thick. The following situation is described: A longwall face had to pass through a ventilation tunnel. To reduce the inner stress of the coal mass above and below the ventilation tunnel infusion was used. Water was forced into the walls of the tunnel. The tunnel section was 200 m long, 28 holes were drilled, each 40 m deep, diameter of the bore 42 to 45 mm, water pressure 300 at. To prevent bumps the orientation of the longwall face, which had been parallel to the ventilation tunnel, was changed so that it was at the angle of 15 degrees to the ventilation tunnel. Experience showed that the most dangerous situation in the tunnel arises when the distance between a longwall face and a roadway is reduced to 45 m. At that moment pressure on the road support system is the greatest. The danger of bumps at a longwall face is the greatest when it is 25 m away from a roadway.

  3. The mobility of indium and gallium in groundwater systems: constraining the role of sorption in sand column experiments

    Science.gov (United States)

    Dror, I.; Ringering, K.; Yecheskel, Y.; Berkowitz, B.

    2017-12-01

    The mobility of indium and gallium in groundwater environments was studied via laboratory experiments using quartz sand as a porous medium. Indium and gallium are metals of very low abundance in the Earth's crust and, correspondingly, the biosphere is only adapted to very small concentrations of these elements. However, in modern semiconductor industries, both elements play a central role and are incorporated in devices of mass production such as smartphones and digital cameras. The resulting considerable increase in production, use and discharge of indium and gallium throughout the last two decades, with a continuous and fast increase in the near future, raises questions regarding the fate of both elements in the environment. However, the transport behavior of these two metals in soils and groundwater systems remains poorly understood to date. Because of the low solubility of both elements in aqueous solutions, trisodium citrate was used as a complexation agent to stabilize the solutions, enabling investigation of the transport of these metals at neutral pH. Column experiments showed different binding capacities for indium and gallium, where gallium is much more mobile compared to indium and both metals are substantially retarded in the column. Different affinities were also confirmed by examining sorption isotherms of indium and gallium in equilibrium batch systems. The effect of natural organic matter on the mobility of indium and gallium was also studied, by addition of humic acid. For both metals, the presence of humic acid affects the sorption dynamics: for indium, sorption is strongly inhibited leading to much higher mobility, whereas gallium showed a slightly higher sorption affinity and very similar mobility compared to the same setup without humic acid addition. However, in all cases, the binding capacity of gallium to quartz is much weaker than that of indium. These results are consistent with the assumption that indium and gallium form different types

  4. Effect of Indium Doping on the Sensitivity of SnO2 Gas Sensor

    International Nuclear Information System (INIS)

    Suharni; Sayono

    2009-01-01

    The dependence of sensitivity f SnO 2 gas sensors on indium concentration has been studied. Undoped and indium-doped SnO 2 gas sensors have been prepared by DC sputtering technique with following parameters i.e : electrode voltage of 3 kV, current 20 mA, vacuum pressure 1.8 × 10 -1 torr, deposition time 60 minutes and temperature of 200℃. The effect of weight variations of indium in order of 0.0370; 0.0485 and 0.0702 grams into SnO 2 thin film gas sensor for optimum result were investigated. The measurement of resistance, sensitivity and response time for various temperature for detecting of carbon monoxide (CO), Ammonia (NH 3 ) and acetone (CH 3 COCH 3 ) gas for indium doped has been done. From the analysis result shows that for indium doped 0.0702 g on the SnO 2 the resistance can be decreased from 832.0 kΩ to 3.9 kΩ and the operating temperature from 200℃ to 90℃ and improving the sensitivity from 15.92% to 40.09% and a response time from 30 seconds to 10 seconds for CO. (author)

  5. Selectivity enhancement of indium-doped SnO2 gas sensors

    International Nuclear Information System (INIS)

    Salehi, A.

    2002-01-01

    Indium doping was used to enhance the selectivity of SnO 2 gas sensor. Both indium-doped and undoped SnO 2 gas sensors fabricated with different deposition techniques were investigated. The changes in the sensitivity of the sensors caused by selective gases (hydrogen and wood smoke) ranging from 500 to 3000 ppm were measured at different temperatures from 50 to 300 deg. C. The sensitivity peaks of the samples exhibit different values for selective gases with a response time of approximately 0.5 s. Thermally evaporated indium-doped SnO 2 gas sensor shows a considerable increase in the sensitivity peak of 27% in response to wood smoke, whereas it shows a sensitivity peak of 7% to hydrogen. This is in contrast to the sputter deposited indium-doped SnO 2 gas sensor, which exhibits a much lower sensitivity peak of approximately 2% to hydrogen and wood smoke compared to undoped SnO 2 gas sensors fabricated by chemical vapor deposition and spray pyrolysis. Scanning electron microscopy shows that different deposition techniques result in different porosity of the films. It is observed that the thermally evaporated indium-doped SnO 2 gas sensor shows high porosity, while the sputtered sample exhibits almost no porosity

  6. Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties

    Directory of Open Access Journals (Sweden)

    Hope Greg

    2008-01-01

    Full Text Available Abstract Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L−1In2(SO43-0.002 mol L−1SeO2-0.02 mol L−1SDS-0.01 mol L−1citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template and SDS (soft template.

  7. Evidence for atomic scale disorder in indium nitride from perturbed angular correlation spectroscopy

    International Nuclear Information System (INIS)

    Dogra, R; Shrestha, S K; Byrne, A P; Ridgway, M C; Edge, A V J; Vianden, R; Penner, J; Timmers, H

    2005-01-01

    The crystal lattice of bulk grains and state-of-the-art films of indium nitride was investigated at the atomic scale with perturbed angular correlation spectroscopy using the 111 In/Cd radioisotope probe. The probe was introduced during sample synthesis, by diffusion and by ion implantation. The mean quadrupole interaction frequency ν Q = 28 MHz was observed at the indium probe site in all types of indium nitride samples with broad frequency distributions. The observed small, but non-zero, asymmetry parameter indicates broken symmetry around the probe atoms. Results have been compared with theoretical calculations based on the point charge model. The consistency of the experimental results and their independence of the preparation technique suggest that the origin of the broad frequency distribution is inherent to indium nitride, indicating a high degree of disorder at the atomic scale. Due to the low dissociation temperature of indium nitride, furnace and rapid thermal annealing at atmospheric pressure reduce the lattice disorder only marginally

  8. Electrochemical removal of indium ions from aqueous solution using iron electrodes

    International Nuclear Information System (INIS)

    Chou, Wei-Lung; Huang, Yen-Hsiang

    2009-01-01

    The removal of indium ions from aqueous solution was carried out by electrocoagulation in batch mode using an iron electrode. Various operating parameters that could potentially affect the removal efficiency were investigated, including the current density, pH variation, supporting electrolyte, initial concentration, and temperature. The optimum current density, supporting electrolyte concentration, and temperature were found to be 6.4 mA/cm 2 , 0.003N NaCl, and 298 K, respectively. When the pH values lower than 6.1, the removal efficiencies of indium ions via electrocoagulation were up to 5 times greater than those by adding sodium hydroxide. The indium ion removal efficiency decreased with an increase in the initial concentration. Results for the indium ion removal kinetics at various current densities show that the kinetic rates conformed to the pseudo-second-order kinetic model with good correlation. The experimental data were also tested against different adsorption isotherm models for describing the electrocoagulation process. The adsorption of indium ions preferably fitting the Langmuir adsorption isotherm suggests monolayer coverage of adsorbed molecules.

  9. Electrochemical removal of indium ions from aqueous solution using iron electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Wei-Lung, E-mail: wlchou@sunrise.hk.edu.tw [Department of Safety, Health and Environmental Engineering, Hungkuang University, No. 34 Chung-Chie Road, Sha-Lu, Taichung 433, Taiwan (China); Huang, Yen-Hsiang [Department of Safety, Health and Environmental Engineering, Hungkuang University, No. 34 Chung-Chie Road, Sha-Lu, Taichung 433, Taiwan (China)

    2009-12-15

    The removal of indium ions from aqueous solution was carried out by electrocoagulation in batch mode using an iron electrode. Various operating parameters that could potentially affect the removal efficiency were investigated, including the current density, pH variation, supporting electrolyte, initial concentration, and temperature. The optimum current density, supporting electrolyte concentration, and temperature were found to be 6.4 mA/cm{sup 2}, 0.003N NaCl, and 298 K, respectively. When the pH values lower than 6.1, the removal efficiencies of indium ions via electrocoagulation were up to 5 times greater than those by adding sodium hydroxide. The indium ion removal efficiency decreased with an increase in the initial concentration. Results for the indium ion removal kinetics at various current densities show that the kinetic rates conformed to the pseudo-second-order kinetic model with good correlation. The experimental data were also tested against different adsorption isotherm models for describing the electrocoagulation process. The adsorption of indium ions preferably fitting the Langmuir adsorption isotherm suggests monolayer coverage of adsorbed molecules.

  10. On the impact of indium distribution on the electronic properties in InGaN nanodisks

    KAUST Repository

    Benaissa, M.

    2015-03-09

    We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations - plasmons - at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening. In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.

  11. The steady-state and time-resolved photophysical properties of a dimeric indium phthalocyanine complex

    International Nuclear Information System (INIS)

    Chen Yu; Araki, Yasuyuki; Dini, Danilo; Liu Ying; Ito, Osamu; Fujitsuka, Mamoru

    2006-01-01

    The steady-state and time-resolved photophysical properties and some molecular orbital calculation results of a dimeric indium phthalocyanine complex with an indium-indium bond, i.e., [tBu 4 PcIn] 2 .2tmed, have been described. The results regarding triplet excited state lifetimes can be ascribed to strong intramolecular interactions existing only in the excited state of this dimer because no significant difference in the absorption spectra of the tBu 4 PcInCl monomer and the [tBu 4 PcIn] 2 .2tmed dimer is observed, suggesting that no ground-state interaction can be assessed. The deactivation processes of the excited singlet state of [tBu 4 PcIn] 2 .2tmed are apparently faster than that of μ-oxo-bridged PcIn dimer [tBu 4 PcIn] 2 O. Molecular orbital calculation on the PcIn dimer shows no node between two indium atoms was found in the HOMO - 2 of the PcIn-InPc dimer, suggesting that bonding electrons distribute between two indium atoms

  12. Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

    2008-01-01

    Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

  13. On the impact of indium distribution on the electronic properties in InGaN nanodisks

    KAUST Repository

    Benaissa, M.; Sigle, W.; Ng, Tien Khee; El Bouayadi, R.; van Aken, P. A.; Jahangir, S.; Bhattacharya, P.; Ooi, Boon S.

    2015-01-01

    We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations - plasmons - at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening. In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.

  14. Diagnosis of infection by preoperative scintigraphy with indium-labeled white blood cells

    International Nuclear Information System (INIS)

    Wukich, D.K.; Abreu, S.H.; Callaghan, J.J.; Van Nostrand, D.; Savory, C.G.; Eggli, D.F.; Garcia, J.E.; Berrey, B.H.

    1987-01-01

    Scintigraphy with indium-labeled white blood cells has been reported to be sensitive and specific in the diagnosis of low-grade sepsis of the musculoskeletal system. We reviewed the records of fifty patients who had suspected osteomyelitis or suspected infection about a total joint prosthesis and who underwent scintigraphy with technetium-99m methylene diphosphonate and scintigraphy with indium-111 oxine-labeled white blood cells before an open surgical procedure. Any patient who received preoperative antibiotics was not included in the study. For all of the patients, gram-stain examination of smears, evaluation of a culture of material from the operative site, and histological examination were done. The patients were divided into two groups. Group I was composed of twenty-four patients, each of whom had a prosthesis in place and complained of pain. Group II was composed of twenty-six patients for whom a diagnosis of chronic osteomyelitis had to be considered. With the indium scans alone, there was only one false-negative result (in Group II), but there were eighteen false-positive results (eight patients in Group II and ten patients in Group I). Although scintigraphy with indium-labeled white blood cells is quite sensitive, it is not specific in detecting chronic osteomyelitis; a negative scan should be considered highly suggestive that osteomyelitis is not present. Specificity can be increased by interpreting the indium scan in conjunction with the technetium scan

  15. Enhanced photocatalytic activity of titania with unique surface indium and boron species

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yanlong; Wang, Enjun; Yuan, Jixiang [MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin 300457 (China); Cao, Yaan, E-mail: caoyaan@yahoo.com [MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin 300457 (China)

    2013-05-15

    Indium and boron co-doped TiO{sub 2} photocatalysts were prepared by a sol–gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV–vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO{sub 2} in interstitial mode, while indium is present as unique chemical species of O–In–Cl{sub x} (x = 1 or 2) on the surface. Compared with pure TiO{sub 2}, the narrowness of band gap of TiO{sub 2} doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O–In–Cl{sub x} (x = 1 or 2) and B{sub 2}O{sub 3} species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO{sub 2} showed the much higher photocatalytic activities than pure TiO{sub 2}, boron doped TiO{sub 2} (TiO{sub 2}–B) and indium doped TiO{sub 2} (TiO{sub 2}–In) under visible and UV light irradiation.

  16. Synthesis and decomposition of a novel carboxylate precursor to indium oxide

    Science.gov (United States)

    Hepp, Aloysius F.; Andras, Maria T.; Duraj, Stan A.; Clark, Eric B.; Hehemann, David G.; Scheiman, Daniel A.; Fanwick, Phillip E.

    1994-01-01

    Reaction of metallic indium with benzoyl peroxide in 4-1 methylpyridine (4-Mepy) at 25 C produces an eight-coordinate mononuclear indium(III) benzoate, In(eta(sup 2)-O2CC6H5)3(4-Mepy)2 4H2O (I), in yields of up to 60 percent. The indium(III) benzoate was fully characterized by elemental analysis, spectroscopy, and X-ray crystallography; (I) exists in the crystalline state as discrete eight-coordinate molecules; the coordination sphere around the central indium atom is best described as pseudo-square pyramidal. Thermogravimetric analysis of (I) and X-ray diffraction powder studies on the resulting pyrolysate demonstrate that this new benzoate is an inorganic precursor to indium oxide. Decomposition of (I) occurs first by loss of 4-methylpyridine ligands (100 deg-200 deg C), then loss of benzoates with formation of In2O3 at 450 C. We discuss both use of carboxylates as precursors and our approach to their preparation.

  17. Enhanced photocatalytic activity of titania with unique surface indium and boron species

    International Nuclear Information System (INIS)

    Yu, Yanlong; Wang, Enjun; Yuan, Jixiang; Cao, Yaan

    2013-01-01

    Indium and boron co-doped TiO 2 photocatalysts were prepared by a sol–gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV–vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO 2 in interstitial mode, while indium is present as unique chemical species of O–In–Cl x (x = 1 or 2) on the surface. Compared with pure TiO 2 , the narrowness of band gap of TiO 2 doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O–In–Cl x (x = 1 or 2) and B 2 O 3 species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO 2 showed the much higher photocatalytic activities than pure TiO 2 , boron doped TiO 2 (TiO 2 –B) and indium doped TiO 2 (TiO 2 –In) under visible and UV light irradiation.

  18. Enhanced photocatalytic activity of titania with unique surface indium and boron species

    Science.gov (United States)

    Yu, Yanlong; Wang, Enjun; Yuan, Jixiang; Cao, Yaan

    2013-05-01

    Indium and boron co-doped TiO2 photocatalysts were prepared by a sol-gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV-vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO2 in interstitial mode, while indium is present as unique chemical species of O-In-Clx (x = 1 or 2) on the surface. Compared with pure TiO2, the narrowness of band gap of TiO2 doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O-In-Clx (x = 1 or 2) and B2O3 species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO2 showed the much higher photocatalytic activities than pure TiO2, boron doped TiO2 (TiO2-B) and indium doped TiO2 (TiO2-In) under visible and UV light irradiation.

  19. Thermal stability and phase transformation in fully indium oxide (InO{sub 1.5}) stabilized zirconia

    Energy Technology Data Exchange (ETDEWEB)

    Piva, R.H., E-mail: honorato.piva@ua.pt; Piva, D.H.; Morelli, M.R.

    2017-01-15

    Indium oxide (InO{sub 1.5}) stabilized zirconia (InSZ) is an attractive material as electrolyte, or electrode, in solid oxide fuel cells (SOFCs), and as corrosion resistant top coat in thermal barrier coatings. However, little is known about the phase stability of cubic InSZ at temperatures that simulate the conditions in an operating SOFC or turbine. This article provides an investigation of the phase stability and phase transformations in cubic InSZ after heat treatments at 800, 1000, and 1200 °C for periods up to 2000 h. The results revealed that cubic InSZ is not stable during annealing at 1000 and 1200 °C, owing to a fast destabilization of the initial cubic phase to tetragonal, and eventually to monoclinic (c → t → m). The c → t → m transition in InSZ is intimately associated with the indium volatilization. On the other hand, cubic InSZ remained stable for 2000 h at 800 °C, although the partial formation of the tetragonal phase was observed along with a 0.25% contraction in the unit cell volume of the cubic phase, caused by short-range ordering. These results demonstrate that technological applications of cubic InSZ are restricted to temperatures at which the volatilization of the InO{sub 1.5} stabilizer does not occur. - Highlights: •Phase stability of fully InO{sub 1.5} stabilized zirconia (cubic InSZ) was evaluated. •Cubic InSZ is instable at temperatures ≥ 1000 °C, owing to the cubic-to-tetragonal-to-monoclinic destabilization. •Cubic InSZ undergoes the cubic-to-tetragonal transformation at ~ 800 °C. •Owing to the low phase stability, applications of cubic InSZ in TBCs or SOFCs are restricted.

  20. Lithium indium diselenide: A new scintillator for neutron imaging

    Energy Technology Data Exchange (ETDEWEB)

    Lukosi, Eric, E-mail: elukosi@utk.edu [University of Tennessee, Knoxville, TN (United States); Herrera, Elan; Hamm, Daniel; Lee, Kyung-Min [University of Tennessee, Knoxville, TN (United States); Wiggins, Brenden [Y-12 National Security Complex, Oak Ridge, TN (United States); Trtik, Pavel [Paul Scherrer Institut, Villigen CH-5232 (Switzerland); Penumadu, Dayakar; Young, Stephen [University of Tennessee, Knoxville, TN (United States); Santodonato, Louis; Bilheux, Hassina [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Burger, Arnold; Matei, Liviu [Fisk University, Nashville, TN (United States); Stowe, Ashley C. [University of Tennessee, Knoxville, TN (United States); Y-12 National Security Complex, Oak Ridge, TN (United States)

    2016-09-11

    Lithium indium diselenide, {sup 6}LiInSe{sub 2} or LISe, is a newly developed neutron detection material that shows both semiconducting and scintillating properties. This paper reports on the performance of scintillating LISe crystals for its potential use as a converter screen for cold neutron imaging. The spatial resolution of LISe, determined using a 10% threshold of the Modulation Transfer Function (MTF), was found to not scale linearly with thickness. Crystals having a thickness of 450 µm or larger resulted in an average spatial resolution of 67 µm, and the thinner crystals exhibited an increase in spatial resolution down to the Nyquist frequency of the CCD. The highest measured spatial resolution of 198 µm thick LISe (27 µm) outperforms a commercial 50 µm thick ZnS(Cu):{sup 6}LiF scintillation screen by more than a factor of three. For the LISe dimensions considered in this study, it was found that the light yield of LISe did not scale with its thickness. However, absorption measurements indicate that the {sup 6}Li concentration is uniform and the neutron absorption efficiency of LISe as a function of thickness follows general nuclear theory. This suggests that the differences in apparent brightness observed for the LISe samples investigated may be due to a combination of secondary charged particle escape, scintillation light transport in the bulk and across the LISe-air interface, and variations in the activation of the scintillation mechanism. Finally, it was found that the presence of {sup 115}In and its long-lived {sup 116}In activation product did not result in ghosting (memory of past neutron exposure), demonstrating potential of LISe for imaging transient systems.

  1. Charge carrier transport mechanisms in nanocrystalline indium oxide

    International Nuclear Information System (INIS)

    Forsh, E.A.; Marikutsa, A.V.; Martyshov, M.N.; Forsh, P.A.; Rumyantseva, M.N.; Gaskov, A.M.; Kashkarov, P.K.

    2014-01-01

    The charge transport properties of nanocrystalline indium oxide (In 2 O 3 ) are studied. A number of nanostructured In 2 O 3 samples with various nanocrystal sizes are prepared by sol–gel method and characterized using various techniques. The mean nanocrystals size varies from 7–8 nm to 18–20 nm depending on the conditions of their preparation. Structural characterizations of the In 2 O 3 samples are performed by means of transmission electron microscopy and X-ray diffraction. The analysis of dc and ac conductivity in a wide temperature range (T = 50–300 K) shows that at high temperatures charge carrier transport takes place over conduction band and at low temperatures a variable range hopping transport mechanism can be observed. We find out that the temperature of transition from one mechanism to another depends on nanocrystal size: the transition temperature rises when nanocrystals are bigger in size. The average hopping distance between two sites and the activation energy are calculated basing on the analysis of dc conductivity at low temperature. Using random barrier model we show a uniform hopping mechanism taking place in our samples and conclude that nanocrystalline In 2 O 3 can be regarded as a disordered system. - Highlights: • In 2 O 3 samples with various nanocrystal sizes are prepared by sol–gel method. • The mean nanocrystal size varies from 7–8 nm to 18–20 nm. • At high temperatures charge carrier transport takes place over conduction band. • At low temperatures a variable range hopping transport mechanism can be observed. • We show a uniform hopping mechanism taking place in our samples

  2. Imaging experimental coronary artery thrombosis with indium-111 platelets

    International Nuclear Information System (INIS)

    Riba, A.L.; Thakur, M.L.; Gottschalk, A.; Zaret, B.L.

    1979-01-01

    The ability of cardiac scintigraphy with indium-111 ( 111 In)-labeled platelets to detect coronary artery thrombosis (CAT) was assessed in a canine model. Cardiac imaging and tissue distribution studies were performed shortly after administering 111 In-labeled platelets to 12 dogs (group 1) with acute CAT. Four dogs (group 2) with acute CAT were studied 2 and 22 hours after administering 111 In platelets. In addition, four dogs (group 3) with 24-hour-old CAT were similarly evaluated. In all group 1 animals, in vivo imaging 1 to 2 hours after 111 In platelet administration revealed intense uptake in the region of thrombus-containing left anterior descending arteries that was readily discernible from background blood pool activity. Sequential imaging of the four group 2 animals over a 22-hour period revealed no change in the scintigraphic pattern of the thrombosed arteries. In contrast, 111 In platelet imaging in the four group 3 animals with 24-hour-old CAT failed to reveal enhanced activity within the region of the thrombus-containing coronary artery. In the 12 group 1 animals, the CAT accumulated 69 +- 10 (mean +- SEM) times greater activity than present in blood and 651 +- 135 times greater activity than normal left ventricular myocardium. There was 24 +- 7 times greater 111 In activity in the damaged left anterior descending arteries compared with normal circumflex arteries. Similar uptake ratios were seen in group 2 animals. The 24-hour old thrombi from group 3 animals showed no enhanced 111 In uptake. This study demonstrates that experimental acute CAT can be detected readily with 111 In platelet cardiac scintigraphy

  3. Decay studies of the highly neutron-deficient indium isotopes

    International Nuclear Information System (INIS)

    Wouters, J.M.

    1982-02-01

    An extension of the experimentally known nuclidic mass surface to nuclei far from the region of beta-stability is of fundamental interest in providing a better determination of the input parameters for the various nuclear mass formulae, allowing a more accurate prediction of the ultimate limits of nuclear stability. In addition, a study of the shape of the mass surface in the vicinity of the doubly-closed nuclide 100 Sn provides initial information on the behavior of the shell closure to be expected when Z = N = 50. Experiments measuring the decay energies of 103 105 In by β-endpoint measurements are described with special attention focused on the development of a plastic scintillator β-telescope coupled to the on-line mass separator RAMA (Recoil Atom Mass Analyzer). An attempt to measure the β-endpoint energy of 102 In is also briefly described. The experimentally determined decay energies and derived masses for 103 105 In are compared with the predictions of different mass models to identify which models are more successful in this region. Furthermore, the inclusion in these comparisons of the available data on the neutron-rich indium nuclei permits a systematic study of their ground state mass behavior as a function of the neutron number between the shell closures at N = 50 and N = 82. These analyses indicate that the binding energy of 103 In is 1 MeV larger than predicted by the majority of the mass models. An examination of the Q/sub EC/ surface and the single- and two-neutron separation energies in the vicinity of 103 105 In is also performed to investigate further the deviation and other possible systematic variations in the mass surface in a model-independent way

  4. Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

    KAUST Repository

    Lee, Kyu-Sung; Lim, Jong-Wook; Kim, Han-Ki; Alford, T. L.; Jabbour, Ghassan E.

    2012-01-01

    A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive

  5. An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide

    NARCIS (Netherlands)

    Morales-Masis, M.; Dauzou, F.; Jeangros, Q.; Dabirian, A.; Lifka, H.; Gierth, R.; Ruske, M.; Moet, D.; Hessler-Wyser, A.; Ballif, C.

    2016-01-01

    Flexible large-area organic light-emitting diodes (OLEDs) require highly conductive and transparent anodes for efficient and uniform light emission. Tin-doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are

  6. Solvent extraction studies of indium-mixed chelates with β-diketones in benzene media

    International Nuclear Information System (INIS)

    Sudersanan, M.; Sundaram, A.K.

    1975-01-01

    Mixed chelate formation of indium with several β-diketones has been studied in benzene media. The extraction of indium by benzoyltrifluoroacetone (BFA) and furoyltrifluoroacetone (FFA) has been carried out as a function of pH and concentration of the ligand to ascertain the nature of the complexes. The extraction of indium by a mixture of β-diketones, viz., BFA-benzoylacetone(BA), BFA-dibenzoylmethene (DBM), FFA-BA, FFA-DBM, FFA-BFA and DBM-BA has also been studied as a function of the solution parameters. The nature of the mixed complexes formed as well as their equilibrium constants, statistical and stabilisation constants have been evaluated. (author)

  7. Radioactive indium labelling of the figured elements of blood. Method, results, applications

    International Nuclear Information System (INIS)

    Ducassou, D.; Nouel, J.P.

    Following the work of Thakur et al. the authors became interested in red corpuscle, leucocyte and platelet labelling with indium 111 or 113m (8 hydroxyquinolein-indium). For easier labelling of the figured elements of blood the technique described was modified. The chelate is prepared by simple contact at room temperature of indium 111 or 113m chloride and water-soluble 8 hydroxyquinolein sulphate, in the presence of 0.2M TRIS buffer. The figured element chosen suspended in physiological serum is added directly to the solution obtained, the platelets and leucocytes being separated out beforehand by differential centrifugation. While it gives results similar to those of Thabur et al. the method proposed avoids the chloroform extraction of the radioactive chelate and the use of alcohol, liable to impair the platelet regation capacity [fr

  8. Effect of ion indium implantation on InP photoluminescence spectra

    International Nuclear Information System (INIS)

    Pyshnaya, N.B.; Radautsan, S.I.; Tiginyanu, I.M.; Ursaki, V.V.

    1988-01-01

    Photoluminescence spectra of indium phosphide single crystals implanted by indium after annealing under the protective Al 2 O 3 film in a nitrogen flow are investigated. As a result of implantation and annealing in photoluminescence spectra of crystals there appeared a new band with the maximum at 1.305 eV (T=6 K) which is connected with the free electron transition at the level of the antistructure defect of In p - lying by 0.115 eV above the valent zone ceiling. With large doses of the implanted indium in the photoluminescence spectrum a long-wave band with the maximum at 0.98-0.99 eV is also observed caused, apparently, by the strong lattice disorder

  9. Use of activable cations as tracers in groundwater hydrology. The case of DTPA-Indium

    International Nuclear Information System (INIS)

    Lumu, Badimbayi Matu.

    1978-01-01

    The possibilities of EDTA, CDTA and DTPA metallic complexes use as activable groundwater, tracers are discussed. Indium, which has good nuclear caracteristics for activation analysis and forms complexes of great stability with polyamino carboxylic acid has been for Laboratory and field studies. For corporative studies, Rhodomine B, a fluorescent tracer have been studied together with Indium complexes. In laboratory retention studies have been carried with In-EDTA, Iodine 131 and Rhodomine B, as tracers and bentonite, zeolite 13X and Dowex-1 and Dowex-50 as sorbents. As field studies, drainage evolution flow and resident time distribution of tracers substances in water, have been carried, under artificial rain conditions realized by aspersion. Results from field studies showed good characteristics of Indium Complexes especially in very absorbent medium (argilaceous limon) where their restitution balance were superior to that of Rhodomine B

  10. Short-range order in amorphous thin films of indium selenides

    International Nuclear Information System (INIS)

    Zakharov, V.P.; Poltavtsev, Yu.G.; Sheremet, G.P.

    1982-01-01

    A structure of the short-range order and a character of interatomic interactions in indium selenides Insub(1-x)Sesub(x) with 0.333 <= x <= 0.75, obtained in the form of amorphous films 0.05-0.80 μm thick are studied using electron diffraction method. It is found out that mostly tetrahedrical coordination of nearest neighbours in the vicinity of indium atoms is characteristic for studied amorphous films, and coordination of selenium atoms is different. Amorphous film with x=0.75 posesses a considereably microheterogeneous structure of the short-range order, which is characterized by the presence of microunclusions of amorphous selenium and atoms of indium, octohedrically coordinated by selenium atoms

  11. Chemical composition of cadmium selenochromite crystals doped with indium, silver and gallium

    International Nuclear Information System (INIS)

    Bel'skij, N.K.; Ochertyanova, L.I.; Shabunina, G.G.; Aminov, T.G.

    1985-01-01

    The high accuracy chemical analysis Which allows one to observe doping effect on the cadmium selenochromite crystal composition is performed. The problem on the possibility of impurity atom substitution for basic element is considered on the basis of data of atomic-absorption analysis of doped crystals. The crystals of cadmium selenochromite doped with indium by chromium to cadmium ratio are distributed into two groups and probably two types of substitution take place. At 0.08-1.5 at.% indium concentrations the Cr/Cd ratio >2. One can assume that indium preferably takes cadmium tetrahedral positions whereas at 1.5-2.5 at. % concentrations the Cr/Cd ratio =2 and cadmium is substituted for silver which does not contradict crystallochemical and physical properties of this compound. In crystals with gallium the Cr/Cd ratio <2. Gallium preferably substitutes chromium

  12. Optical investigations on indium oxide nano-particles prepared through precipitation method

    International Nuclear Information System (INIS)

    Seetha, M.; Bharathi, S.; Dhayal Raj, A.; Mangalaraj, D.; Nataraj, D.

    2009-01-01

    Visible light emitting indium oxide nanoparticles were synthesized by precipitation method. Sodium hydroxide dissolved in ethanol was used as a precipitating agent to obtain indium hydroxide precipitates. Precipitates, thus formed were calcined at 600 deg. C for 1 h to obtain indium oxide nanoparticles. The structure of the particles as determined from the X-Ray diffraction pattern was found to be body centered cubic. The phase transformation of the prepared nanoparticles was analyzed using thermogravimetry. Surface morphology of the prepared nanoparticles was analyzed using high resolution-scanning electron microscopy and transmission electron microscopy. The results of the analysis show cube-like aggregates of size around 50 nm. It was found that the nanoparticles have a strong emission at 427 nm and a weak emission at 530 nm. These emissions were due to the presence of singly ionized oxygen vacancies and the nature of the defect was confirmed through Electron paramagnetic resonance analysis.

  13. Anodic behavior of Al-Zn-In sacrificial anodes at different concentration of zinc and indium

    Energy Technology Data Exchange (ETDEWEB)

    Keyvani, Ahmad [Shahrekord Univ. (Iran, Islamic Republic of). Dept. of Materials Engineering; Tehran Univ. (Iran, Islamic Republic of). School of Metallurgy and Materials; Saremi, Mohsen [Tehran Univ. (Iran, Islamic Republic of). School of Metallurgy and Materials; Saeri, Mohammad Reza [Shahrekord Univ. (Iran, Islamic Republic of). Dept. of Materials Engineering

    2012-12-15

    Al-Zn-In anodes show better performance due to the beneficial effects of Zn and In on prevention of aluminum passivity and producing a homogeneous structure for uniform corrosion of the anodes. However, there are different views about the optimum concentration of each element in the anode. In this study, the anodic behavior of Al-Zn-In alloy with different concentrations of zinc from 1 to 6wt.% and indium from 0.01 to 0.05wt.% are studied. The NACE efficiency test and polarization are used in 3wt.% NaCl solution for corrosion characterization. The results showed that zinc and indium change the anode potential to more active potentials and improve the microstructure uniformity of anodes. The latter leads to more uniform corrosion. Optimum concentrations of zinc (5wt.%) and indium (0.02wt.%) were found in this respect. (orig.)

  14. Evaluation of musculoskeletal sepsis with indium-111 white blood cell imaging

    International Nuclear Information System (INIS)

    Ouzounian, T.J.; Thompson, L.; Grogan, T.J.; Webber, M.M.; Amstutz, H.C.

    1987-01-01

    The detection of musculoskeletal sepsis, especially following joint replacement, continues to be a challenging problem. Often, even with invasive diagnostic evaluation, the diagnosis of infection remains uncertain. This is a report on the first 55 Indium-111 white blood cell (WBC) images performed in 39 patients for the evaluation of musculoskeletal sepsis. There were 40 negative and 15 positive Indium-111 WBC images. These were correlated with operative culture and tissue pathology, aspiration culture, and clinical findings. Thirty-eight images were performed for the evaluation of possible total joint sepsis (8 positive and 30 negative images); 17 for the evaluation of nonarthroplasty-related musculoskeletal sepsis (7 positive and 10 negative images). Overall, there were 13 true-positive, 39 true-negative, two false-positive, and one false-negative images. Indium-111 WBC imaging is a sensitive and specific means of evaluating musculoskeletal sepsis, especially following total joint replacement

  15. TEM and XANES study of MOVPE grown InAIN layers with different indium content

    International Nuclear Information System (INIS)

    Kret, S; Wolska, A; Klepka, M T; Letrouit, A; Ivaldi, F; Szczepańska, A; Carlin, J-F; Kaufmann, N A K; Grandjean, N

    2011-01-01

    We present structure and spatially resolved composition studies by TEM (Transmission Electron Microscopy) and XANES (X-ray Absorption Near Edge Structure) of InAIN MOVPE (Metal-Organic Vapor Phase Epitaxy) epilayers containing 16-27 at% of indium. Investigations of the In L 3 edge by synchrotron radiation absorption show a significant change of the post-edge structure depending on the indium content. We attribute this to the solubility limit and phase separation in this system. Our measurements suggest that the critical composition is 18% for our growth conditions. HRTEM cross-sectional and EDX investigations confirm such phase separation as well as the changing of the structure from 2D growth to columnar like growth for the sample with the highest indium content.

  16. Hydrothermal synthesis of two layered indium oxalates with 12-membered apertures

    International Nuclear Information System (INIS)

    Chen Zhenxia; Zhou Yaming; Weng Linhong; Zhang Haoyu; Zhao Dongyuan

    2003-01-01

    Two layered indium oxalates, In(C 2 O 4 ) 2.5 (C 3 N 2 H 12 )(H 2 O) 3 , I, and In(C 2 O 4 ) 1.5 (H 2 O) 3 , II, have been hydrothermally synthesized. In I, the linkage between indium and oxalate units gives rise to a sheet with a rectangular 12-membered aperture (six indium atoms and six oxalate units). Indium atom of II has an unusual pentagonal bipyramidal coordination arrangement. The connectivity between indium and oxalate units forms a neutral puckered layer with 12- (along a-axis) and eight-membered (along b-axis) apertures. Crystal data for these two indium oxalates are as follows: I, triclinic, space group: P-1 (No. 2), a=8.725(3) A, b=9.170(3) A, c=9.901(3) A, α=98.101(4) deg. , β=97.068(4) deg. , γ=102.403(4) deg. , V=756.3(4) A 3 , Z=2, M=463.0(5), ρ calc =2.042 g/cm 3 , R 1 =0.0377, wR 2 =0.0834. II, monoclinic, space group: P2 1 /c (No. 14), a=10.203(5) A, b=6.638(1) A, c=11.152(7) A, β=95.649(4) deg. , V=751.7(4)A 3 , Z=4, M=300.9(0), ρ calc =2.659 g/cm 3 , R 1 =0.0229, wR 2 =0.0488. TG analyses indicate the water molecules of I can be removed at 150 deg. C. The dehydrated product retains structural integrity

  17. Determination of gold and indium in sea water by neutron activation analysis

    International Nuclear Information System (INIS)

    Tateno, Yukio; Ohta, Naoichi

    1979-01-01

    A combination of electrodeposition on graphite with neutron activation analysis was used for the determination of gold and indium in sea water. At a potential of -0.70 V vs. the silver-silver chloride electrode, gold and indium were electrolyzed on to a graphite electrode (1.1 cm phi x 0.2 cm) from 100 ml of 0.5 M sodium chloride. Recovery yield of gold was constant at pH from 1 to 3 and was independent of the initial concentration of gold, (0.01 -- 1) ppb. For a 72-h electrolysis at pH 2 the recovery yield of gold was 92%, while that of indium was 32%. The graphite electrode was exposed to a thermal neutron flux of 5.1 x 10 11 or 1.5 x 10 12 n cm -2 s -1 : 5 min exposure for indium and 6 to 12 h for gold. After appropriate decay periods the activities of 198 Au and sup(116m)In were measured for 2000 s and 300 s, respectively, with a 4000-channel pulse-height analyser and a Ge(Li) detector. The total amount of gold in 1 l of a sea water sample (Tokyo Bay) was (0.023 +- 0.001)μg, in which nonelectrolyzable gold was estimated to be 0.005 μg. Indium concentration in the sample was too low to be determined by the present method. Detection limit for indium was 1 ppb. (author)

  18. Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

    Science.gov (United States)

    Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

    2010-08-01

    Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

  19. Blood pressure self-monitoring in pregnancy (BuMP) feasibility study; a qualitative analysis of women's experiences of self-monitoring.

    Science.gov (United States)

    Hinton, Lisa; Tucker, Katherine L; Greenfield, Sheila M; Hodgkinson, James A; Mackillop, Lucy; McCourt, Christine; Carver, Trisha; Crawford, Carole; Glogowska, Margaret; Locock, Louise; Selwood, Mary; Taylor, Kathryn S; McManus, Richard J

    2017-12-19

    Hypertensive disorders in pregnancy are a leading cause of maternal and fetal morbidity worldwide. Raised blood pressure (BP) affects 10% of pregnancies worldwide, of which almost half develop pre-eclampsia. The proportion of pregnant women who have risk factors for pre-eclampsia (such as pre-existing hypertension, obesity and advanced maternal age) is increasing. Pre-eclampsia can manifest itself before women experience symptoms and can develop between antenatal visits. Incentives to improve early detection of gestational hypertensive disorders are therefore strong and self-monitoring of blood pressure (SMBP) in pregnancy might be one means to achieve this, whilst improving women's involvement in antenatal care. The Blood Pressure Self-Monitoring in Pregnancy (BuMP) study aimed to evaluate the feasibility and acceptability of SMBP in pregnancy. To understand women's experiences of SMBP during pregnancy, we undertook a qualitative study embedded within the BuMP observational feasibility study. Women who were at higher risk of developing hypertension and/or pre-eclampsia were invited to take part in a study using SMBP and also invited to take part in an interview. Semi-structured interviews were conducted at the women's homes in Oxfordshire and Birmingham with women who were self-monitoring their BP as part of the BuMP feasibility study in 2014. Interviews were conducted by a qualitative researcher and transcribed verbatim. A framework approach was used for analysis. Fifteen women agreed to be interviewed. Respondents reported general willingness to engage with monitoring their own BP, feeling that it could reduce anxiety around their health during pregnancy, particularly if they had previous experience of raised BP or pre-eclampsia. They felt able to incorporate self-monitoring into their weekly routines, although this was harder post-partum. Self-monitoring of BP made them more aware of the risks of hypertension and pre-eclampsia in pregnancy. Feelings of

  20. Pyrolytically grown indium sulfide sensitized zinc oxide nanowires for solar water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Komurcu, Pelin; Can, Emre Kaan; Aydin, Erkan; Semiz, Levent [Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Gurol, Alp Eren; Alkan, Fatma Merve [Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Sankir, Mehmet; Sankir, Nurdan Demirci [Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, 06560 Ankara (Turkey)

    2015-11-15

    Zinc oxide (ZnO) nanowires, sensitized with spray pyrolyzed indium sulfide, were obtained by chemical bath deposition. The XRD analysis indicated dominant evolution of hexagonal ZnO phase. Significant gain in photoelectrochemical current using ZnO nanowires is largely accountable to enhancement of the visible light absorption and the formation of heterostructure. The maximum photoconversion efficiency of 2.77% was calculated for the indium sulfide sensitized ZnO nanowire photoelectrodes. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Growth and Characterization of Indium Doped ZnO Nano wires Using Thermal Evaporation Method

    International Nuclear Information System (INIS)

    Abrar Ismardi; Dee, C.F.; Majlis, B.Y.

    2011-01-01

    Indium doped ZnO nano wires were grown on silicon substrate using vapor thermal deposition method without using any catalyst. Morphological structures were extensively investigated using field emission scanning electron microscopy (FESEM) and show that the nano wires have uniformly hexagonal nano structures with diameters less than 100 nm and lengths from one to a few microns. The sample was measured for elemental composition with energy dispersive X-ray (EDX) spectroscopy, Zn, In and O elements were found on the sample. XRD spectrum of indium doped ZnO nano wires revealed that the nano wires have a high crystalline structure. (author)

  2. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    Science.gov (United States)

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  3. The density of molten indium at temperatures up to 600 K

    International Nuclear Information System (INIS)

    Alchagirov, B.B.; Khatsukov, A.M.; Mozgovoj, A.G.

    2004-01-01

    The liquid indium density measurement is carried out through the pycnometric method within the temperature range of 434-600 K both by heating and cooling. The totality of the obtained results was processed through the approximating equation. The root-mean-square deviation of the experimental data from the approximating equation does not exceed ±0.01%. The high accuracy of the obtained results is noted. The deviation of the existing data on the liquid indium density from the approximating equation is shown graphically [ru

  4. Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

    1992-05-01

    Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

  5. Phosphasalen indium complexes showing high rates and isoselectivities in rac-lactide polymerizations

    Energy Technology Data Exchange (ETDEWEB)

    Myers, Dominic; White, Andrew J.P. [Department of Chemistry, Imperial College London (United Kingdom); Forsyth, Craig M. [School of Chemistry, Monash University, Clayton, VIC (Australia); Bown, Mark [CSIRO Manufacturing, Bayview Avenue, Clayton, VIC (Australia); Williams, Charlotte K. [Department of Chemistry, Oxford University (United Kingdom)

    2017-05-02

    Polylactide (PLA) is the leading bioderived polymer produced commercially by the metal-catalyzed ring-opening polymerization of lactide. Control over tacticity to produce stereoblock PLA, from rac-lactide improves thermal properties but is an outstanding challenge. Here, phosphasalen indium catalysts feature high rates (30±3 m{sup -1} min{sup -1}, THF, 298 K), high control, low loadings (0.2 mol %), and isoselectivity (P{sub i}=0.92, THF, 258 K). Furthermore, the phosphasalen indium catalysts do not require any chiral additives. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. An optimized antibody-chelator conjugate for imaging of carcinoembryonic antigen with indium-111

    International Nuclear Information System (INIS)

    Sumerdon, G.A.; Rogers, P.E.; Lombardo, C.M.; Schnobrich, K.E.; Melvin, S.L.; Tribby, I.I.E.; Stroupe, S.D.; Johnson, D.K.; Hobart, E.D.

    1990-01-01

    A monoclonal antibody to carcinoembryonic antigen showing minimal cross-reactivity with blood cells and normal tissues was derivatized with benzylisothiocyanate derivatives of EDTA and DTPA. Seven chelators per immunoglobulin could be incorporated without loss of immunoreactivity. The resulting conjugates, labeled with indium-111, showed low liver uptake in animals. A cold kit, comprising the DTPA conjugate at a molarity of antibody bound chelator exceeding 1 x 10 -4 M, gave radiochemical yields of indium labeled antibody of ≥ 95% and was stable for 1 yr. (author)

  7. Effect of fabrication conditions on the properties of indium tin oxide powders

    International Nuclear Information System (INIS)

    Xie Wei

    2008-01-01

    This paper reports that indium tin oxide (ITO) crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity in and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350°C and Sn doping content 6∼8wt% are determined. The application of ITO in the military camouflage field is proposed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Work in progress: radionuclide imaging of indium-111-labeled eosinophils in mice

    International Nuclear Information System (INIS)

    Runge, V.M.; Rand, T.H.; Clanton, J.A.; Jones, J.P.; Colley, D.G.; Partain, C.L.; James, A.E. Jr.

    1983-01-01

    Eosinophils isolated from peritoneal exudates were labeled with indium-111-oxine and injected intravenously into sensitized mice. They became localized at sites of inflammation produced by intradermal injections of schistosomal antigen or Toxocara canis larvae, whereas labeled neutrophils did not. Intense uptake of eosinophils by normal spleen, liver, and bone marrow was noted, with tracer distribution effectively complete by 5 hours after injection. Indium-111-eosinophil studies appear to be quite sensitive to parasitic inflammatory reactions; in contrast, nonspecific inflammation such as that induced by turpentine causes localization of eosinophils, but to a lesser extent. This technique may be useful in the study of parasitic and allergic disease

  9. Design and preliminary results for a fast bipolar resonant discharge pulser using SCR switches for driving the injection bump magnets at the ALS

    International Nuclear Information System (INIS)

    Stover, G.; Reginato, L.

    1993-05-01

    A fast (4.0 us half period) resonant discharge pulser using SCRs has been designed and constructed to drive the injection bump magnet system at the Advanced Light Source (ALS). The pulser employs a series-parallel arrangement of Silicon Controlled Rectifiers (SCRS) that creates a bipolar high voltage (±10 KV), high peak current (6600 amps.) and a high di/dt (6000 amp/us) switch network that discharges a capacitor bank into the magnet load. Fast recovery diodes in series with the SCRs significantly reduces the SCR turn-off time during the negative current cycle of the magnet. The SCR switch provides a very reliable and stable alternative to the gas filled Thyratron. A very low impedance transmission system allows the pulser system to reside completely outside the storage ring shielding wall

  10. Continuum modelling of silicon diffusion in indium gallium arsenide

    Science.gov (United States)

    Aldridge, Henry Lee, Jr.

    A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point

  11. New PARSEC data base of α-enhanced stellar evolutionary tracks and isochrones - I. Calibration with 47 Tuc (NGC 104) and the improvement on RGB bump

    Science.gov (United States)

    Fu, Xiaoting; Bressan, Alessandro; Marigo, Paola; Girardi, Léo; Montalbán, Josefina; Chen, Yang; Nanni, Ambra

    2018-05-01

    Precise studies on the Galactic bulge, globular cluster, Galactic halo, and Galactic thick disc require stellar models with α enhancement and various values of helium content. These models are also important for extra-Galactic population synthesis studies. For this purpose, we complement the existing PARSEC models, which are based on the solar partition of heavy elements, with α-enhanced partitions. We collect detailed measurements on the metal mixture and helium abundance for the two populations of 47 Tuc (NGC 104) from the literature, and calculate stellar tracks and isochrones with these α-enhanced compositions. By fitting the precise colour-magnitude diagram with HST ACS/WFC data, from low main sequence till horizontal branch (HB), we calibrate some free parameters that are important for the evolution of low mass stars like the mixing at the bottom of the convective envelope. This new calibration significantly improves the prediction of the red giant branch bump (RGBB) brightness. Comparison with the observed RGB and HB luminosity functions also shows that the evolutionary lifetimes are correctly predicted. As a further result of this calibration process, we derive the age, distance modulus, reddening, and the RGB mass-loss for 47 Tuc. We apply the new calibration and α-enhanced mixtures of the two 47 Tuc populations ([α/Fe] ˜ 0.4 and 0.2) to other metallicities. The new models reproduce the RGB bump observations much better than previous models. This new PARSEC data base, with the newly updated α-enhanced stellar evolutionary tracks and isochrones, will also be a part of the new stellar products for Gaia.

  12. Influence of indium concentration and substrate temperature on the physical characteristics of chemically sprayed ZnO:In thin films deposited from zinc pentanedionate and indium sulfate

    International Nuclear Information System (INIS)

    Castaneda, L; Morales-Saavedra, O G; Cheang-Wong, J C; Acosta, D R; Banuelos, J G; Maldonado, A; Olvera, M de la L

    2006-01-01

    Chemically sprayed indium-doped zinc oxide thin films (ZnO:In) were deposited on glass substrates starting from zinc pentanedionate and indium sulfate. The influence of both the dopant concentration in the starting solution and the substrate temperature on the transport, morphology, composition, linear and nonlinear optical (NLO) properties of the ZnO:In thin films were studied. The structure of all the ZnO:In thin films was polycrystalline, and variation in the preferential growth with the indium content in the solution was observed: from an initial (002) growth in films with low In content, switching to a predominance of (101) planes for intermediate dopant regime, and finally turning to a (100) growth for heavily doped films. The crystallite size was found to decrease with doping concentration and range from 36 to 23 nm. The film composition and the dopant concentration were determined by Rutherford backscattering spectrometry; these results showed that the films are almost stoichiometric ZnO. The optimum deposition conditions leading to conductive and transparent ZnO:In thin films were also found. In this way a resistivity of 4 x 10 -3 Ω cm and an average transmittance in the visible spectra of 85%, with a (101) preferential growth, were obtained in optimized ZnO:In thin films

  13. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Basudev, E-mail: swain@iae.re.kr [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Mishra, Chinmayee [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Hong, Hyun Seon [Sungshin University, Dept. of Interdisciplinary ECO Science, Seoul, 142-732 (Korea, Republic of); Cho, Sung-Soo [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of)

    2016-05-15

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m{sup 3} of copper and 1.35 kg/m{sup 3} of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching

  14. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

    International Nuclear Information System (INIS)

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-01-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m 3 of copper and 1.35 kg/m 3 of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching wastewater

  15. Generic Top-Functionalization of Patterned Antifouling Zwitterionic Polymers on Indium Tin Oxide

    NARCIS (Netherlands)

    Li, Y.; Giesbers, M.; Zuilhof, H.

    2012-01-01

    This paper presents a novel surface engineering approach that combines photochemical grafting and surface-initiated atom transfer radical polymerization (SI-ATRP) to attach zwitterionic polymer brushes onto indium tin oxide (ITO) substrates. The photochemically grafted hydroxyl-terminated organic

  16. Indium oxide thin film based ammonia gas and ethanol vapour sensor

    Indian Academy of Sciences (India)

    Unknown

    acetone and dried under an electric lamp (100 W). Thin films of indium oxide ... A λ-19, UV–VIS Spectrophotometer (Perkin Elmer, USA) was used for measuring .... tion of ammonia is observed through glowing of LED. LM3914, LED driver is ...

  17. Electrical properties of vacuum-annealed titanium-doped indium oxide films

    NARCIS (Netherlands)

    Yan, L.T.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    Titanium-doped indium oxide (ITiO) films were deposited on Corning glass 2000 substrates at room temperature by radio frequency magnetron sputtering followed by vacuum post-annealing. With increasing deposition power, the as-deposited films showed an increasingly crystalline nature. As-deposited

  18. Vibrational spectra of the cyanodimethylmetal complexes of magnesium, aluminium, gallium, and indium

    International Nuclear Information System (INIS)

    Mueller, J.; Schmock, F.; Klopsch, A.; Dehnicke, K.

    1975-01-01

    Tetramethylammonium cyanide reacts with an ethereal solution of dimethylmagnesium to form [NMe 4 ] 4 [Me 2 MgCN] 4 , the complex anion of which is isoelectronic with the known tetrameric dimethylaluminium cyanide [Me 2 AlCN] 4 . The vibrational spectra are reported together with those of the corresponding gallium and indium compounds. (orig.) [de

  19. Use of indium-111-labeled white blood cells in the diagnosis of diabetic foot infections

    International Nuclear Information System (INIS)

    Zeiger, L.S.; Fox, I.M.

    1990-01-01

    The diagnosis of bone infection in the patient with nonvirgin bone is a diagnostic dilemma. This is especially true in the diabetic patient with a soft tissue infection and an underlying osteoarthropathy. The authors present a retrospective study using the new scintigraphic technique of indium-111-labeled white blood cells as a method of attempting to solve this diagnostic dilemma

  20. The measurement of the amplitude of de Haas-van Alphen oscillations in indium

    International Nuclear Information System (INIS)

    Wilde, J. de; Meredith, D.J.

    1976-01-01

    A flux-gate magnetometer incorporating a superconducting flux transformer is described and its application to the measurement of de Haas-van Alphen oscillation amplitude is compared with conventional techniques. Measurements on the third zone Fermi surface of indium in magnetic fields of up to 4 T are given to show the advantages of the method. (author)

  1. Indium extraction by an acidic extractant associated or not with synergetic agents: importance of inorganic anions

    International Nuclear Information System (INIS)

    Goetz-Grandmont, G.; Taheri, M.; Brunette, J.P.; Leroy, M.J.F.

    1985-01-01

    Thermodynamic data are presented for indium extraction from low acidity media (pH value between 1 and 4) and at low concentration by a chelating extractant alone or associated to a solvatant or a lipophylic ammonium salt. Modifications in the nature and/or concentration of inorganic anions can transform the extraction process and allow to change metal distribution between phases [fr

  2. Effect of indium doping on zinc oxide films prepared by chemical ...

    Indian Academy of Sciences (India)

    Administrator

    confirmed by X-ray diffraction technique which leads to the introduction of defects in ZnO. Indium doping ... elements like Al, Ga and In can be used as n-type dopant. (Kato et al 2002) .... (α is the absorption coefficient and hν the photon energy).

  3. Seasonal variability in the input of lead, barium and indium to Law Dome, Antarctica

    DEFF Research Database (Denmark)

    Burn-Nunes...[], L.J.; Vallelonga, Paul Travis; Loss, R.D.

    2011-01-01

    Lead (Pb) isotopic compositions and concentrations, and barium (Ba) and indium (In) concentrations have been determined at monthly resolution in five Law Dome (coastal Eastern Antarctica) ice core sections dated from similar to 1757 AD to similar to 1898 AD. 'Natural' background Pb concentrations...

  4. Progress Report: Feasibility Study of an Indium Scintillator Solar Neutrino Experiment

    International Nuclear Information System (INIS)

    Bellefon, A. de; Barloutaud, R.; Borg, A.; Ernwein, J.; Mosca, L.

    1989-09-01

    In this document, we report on the progress made to demonstrate the feasibility of an experiment which would measure for the first time the two line sources of solar neutrinos resulting from electron capture by 7 Be and from the p-e-p reaction inside the sun. The detector under study consists of scintillator containing 10 tons of Indium

  5. The clinical utility of indium-111 labelled platelet scintigraphy in the diagnoses of renal transplant rejection

    International Nuclear Information System (INIS)

    Desir, G.V.; Bia, M.; Lange, R.C.; Smith, E.O.; Flye, W.; Kashgarian, M.; Schiff, M.; Ezekowitz, M.D.

    1990-01-01

    It is demonstrated that indium-111 labelled platelet scintigraphy is a highly accurate test for detecting acute untreated renal allograft rejection and it is shown that changes in platelet uptake can precede signs and symptoms of rejection by at least 48 hours. (author). 34 refs.; 2 figs.; 1 tab

  6. Efficient Indium-Mediated Dehalogenation of Aromatics in Ionic Liquid Media

    Directory of Open Access Journals (Sweden)

    Flavia C. Zacconi

    2012-12-01

    Full Text Available An efficient indium-mediated dehalogenation reaction of haloaromatics and haloheteroaromatics in ionic liquids has been studied. This method is simple and effective in the presence of [bmim]Br. Furthermore, this methodology is environmentally friendly compared with conventional ones.

  7. Modified method for labeling human platelets with indium-111 oxine using albumin density-gradient separation

    International Nuclear Information System (INIS)

    Bunting, R.W.; Callahan, R.J.; Finkelstein, S.; Lees, R.S.; Strauss, H.W.

    1982-01-01

    When labeling platelets with indium-111 oxine, albumin density-gradient separation minimizes the time spent to resuspend those platelets that have been centrifuged against a hard surface. Labeling efficiency or platelet viability, as measured by platelet survival or aggregation with adenosine diphosphate, are not adversely affected

  8. Physical properties of pyrolytically sprayed tin-doped indium oxide coatings

    NARCIS (Netherlands)

    Haitjema, H.; Elich, J.J.P.

    1991-01-01

    The optical and electrical properties of tin-doped indium oxide coatings obviously depend on a number of production parameters. This dependence has been studied to obtain a more general insight into the relationships between the various coating properties. The coatings have been produced by spray

  9. Preparation of imaging kits locally using indium-113 as a suitable short-lived generator product

    International Nuclear Information System (INIS)

    Hamid, Hamid Seidna

    1999-05-01

    In this study forty patients are selected to do brain , lung , bone , liver and spleen imaging. Patients were selected carefully in the bases of the imaging history disorders. Kits prepared and kept frozen in (- 20 degree C) eluent the generator and indium 113 products were added to each kit and imaging sorted out using gamma camera and analysed statistically

  10. First-principles analysis of structural and opto-electronic properties of indium tin oxide

    Science.gov (United States)

    Tripathi, Madhvendra Nath; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

    2012-05-01

    Density functional theory (DFT) and DFT + U (DFT with on-site Coulomb repulsion corrections) calculations have been carried out to study the structural and opto-electronic properties of indium tin oxide (ITO) for both the oxidized and reduced environment conditions. Some of the results obtained by DFT calculations differ from the experimental observations, such as uncertain indication for the site preference of tin atom to replace indium atom at b-site or d-site, underestimation of local inward relaxation in the first oxygen polyhedra around tin atom, and also the improper estimation of electronic density of states and hence resulting in an inappropriate optical spectra of ITO. These discrepancies of theoretical outcomes with experimental observations in ITO arise mainly due to the underestimation of the cationic 4d levels within standard DFT calculations. Henceforth, the inclusion of on-site corrections within DFT + U framework significantly modifies the theoretical results in better agreement to the experimental observations. Within this framework, our calculations show that the indium b-site is preferential site over d-site for tin atom substitution in indium oxide under both the oxidized and reduced conditions. Moreover, the calculated average inward relaxation value of 0.16 Å around tin atom is in good agreement with the experimental value of 0.18 Å. Furthermore, DFT + U significantly modify the electronic structure and consequently induce modifications in the calculated optical spectra of ITO.

  11. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    KAUST Repository

    Mora Cordova, Angel; Khan, Kamran; El Sayed, Tamer

    2014-01-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show

  12. First heats of cerium solution in liquid aluminium, gallium, indium, tin, lead and bismuth

    International Nuclear Information System (INIS)

    Yamshchikov, L.F.; Lebedev, V.A.; Nichkov, I.F.; Raspopin, S.P.; Shein, V.G.

    1983-01-01

    Cerium solution heats in liquid alluminium, gallium, indium, tin, lead and bismuth are determined in high temperature mixing calorimeter with an isothermal shell. The statistical analysis carried out proves that values of cerium solution heat in fusible metals obtained by the methods of electric motive forces and calorimety give a satisfactory agreement

  13. Study of the cerebro-spinal fluid circulation indium 111 labelled DTPA. Report of 300 cases

    International Nuclear Information System (INIS)

    Moreau, R.; Askienazy, S.; Mathieu, E.; Moretti, J.-L.

    1976-01-01

    A study of the C.S.F. circulation by intrathecal injection of radioactive tracers is a usual technique of neurological exploration. Indium-111 DTPA has numerous advantages for this type of study. It is a chelating agent, the renal clearance of which is rapid and which has no toxicity at the dose injected. Indium-111 is a cyclotron product with a half-life (2.8 days) compatible with the duration of the examination. Finally the dose of radioactivity delivered by this isotope is less than that of iodine 131, Technetium 99m, and ytterbium 169. In normal subjects after injection by the lumbar route, the average biological half-life measured by external counting lies between 20 and 28 hours. A study of the circulation of the C.S.F. is particularly useful in patients suspected of hydrocephalus. It permits finer diagnosis and shows the indication and type of by pass operation that may be necessary. An increase in the biological half-life of indium 111-DTPA seems to be a good indication for such an operation. An experience of 300 patients has shown the interest of the use of Indium 111-DTPA which now seems to be the best radio-isotope for the study of the subarachnoid space [fr

  14. Ion implantation of Indium in Hgsub(1-x)Cdsub(x)Te

    International Nuclear Information System (INIS)

    Destefanis, G.L.

    1984-05-01

    In this paper, the author shows that it is possible to produce n-p junctions in Hgsub(1-x)Cdsub(x)Te by ion implantation and in which the N zone is not induced by the irradiation defects but by the electrically activated (annealing) indium trace amounts [fr

  15. Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Biswajit; Kumar, Kamlesh; Singh, Balwant Kr; Banerjee, Pushan; Das, Subrata, E-mail: neillohit@yahoo.co.in

    2014-11-30

    Graphical abstract: - Highlights: • CdS film grown on indium coated glass substrates via CBD and subsequent annealing. • Disappearance of the indium (1 1 2) peak confirms interdiffusion at 300 °C. • SIMS indicates the subsequent interdiffusion at progressively higher temperature. • Composite In–CdS layer showed lower photosensitivity compared to pure CdS. - Abstract: In the present work attempts were made to synthesize indium doped CdS films by fabricating In/CdS bilayers using CBD-CdS on vacuum evaporated In thin films and subsequent air annealing. 135 nm CdS films were grown onto 20 nm and 35 nm indium coated glass substrate employing chemical bath deposition technique. The In/CdS bilayers thus formed were subjected to heat treatment at the temperatures between 200 and 400 °C for 4 min in the muffle furnace to facilitate indium to diffuse into the CdS films. XRD pattern ascertained no noticeable shift in lattice constant implying grain boundary metal segregation, while secondary ion mass spectrometry indicated the diffusion profile of indium into CdS matrices. Mass spectrometry results showed that substantial diffusion of indium had been taken place within CdS at 400 °C. Dark and photocurrent with different illumination time were measured to ascertain the photosensitivity of pure and composite CdS films.

  16. Gas chromatography of indium in macroscopic and carrier-free amounts using quartz and gold as stationary phases

    Energy Technology Data Exchange (ETDEWEB)

    Serov, A.; Eichler, R.; Tuerler, A.; Wittwer, D.; Gaeggeler, H.W. [Paul Scherrer Inst. (PSI), Villigen (Switzerland). Lab. fuer Radiochemie und Umweltchemie; Bern Univ. (Switzerland). Dept. fuer Chemie und Biochemie; Dressler, R.; Piguet, D.; Voegele, A. [Paul Scherrer Inst. (PSI), Villigen (Switzerland). Lab. fuer Radiochemie und Umweltchemie

    2011-07-01

    The chemical investigation of E113 is likely to become soon feasible. The determination of chemical properties of carrier-free amounts of the lighter homologues of element 113, especially indium and thallium, allows designing experimental set-ups and selecting experimental conditions suitable for performing these studies. Here, we present investigations of the interaction of indium species with quartz and gold surfaces. Deposition temperatures as well as enthalpies of adsorption were determined for indium T{sub dep} = 739 {+-} 20 C (-{delta}H{sub ads}(In) = 227 {+-} 10 kJ mol{sup -1}) and for indium hydroxide T{sub dep} = 250 {+-} 20 C (-{delta}H{sub ads}(InOH)= 124 {+-}10 kJ mol{sup -1}) respectively, on quartz. In case of adsorption of indium on a gold surface only a lower limit of the deposition temperature was established T{sub dep} > 980 C (-{delta}H{sub ads}(In) {>=} 315 {+-} 10 kJ mol{sup -1}). Investigations of macroscopic amounts of indium in thermosublimation experiments at similar experimental conditions were instrumental to establish a tentative speciation of the observed indium species. (orig.)

  17. Indium phosphide (InP) for optical interconnects

    NARCIS (Netherlands)

    Lebby, M.; Ristic, S.; Calabretta, N.; Stabile, R.; Tekin, T.; Pitwon, R.; Håkansson, A.; Pleros, N.

    2016-01-01

    We present InP as the incumbent technology for data center transceiver and switching optics. We review the most popular InP monolithic integration approaches in light of photonic integration being recognized as an increasingly important technology for data center optics. We present Multi-Guide

  18. 3D-LSI technology for image sensor

    International Nuclear Information System (INIS)

    Motoyoshi, Makoto; Koyanagi, Mitsumasa

    2009-01-01

    Recently, the development of three-dimensional large-scale integration (3D-LSI) technologies has accelerated and has advanced from the research level or the limited production level to the investigation level, which might lead to mass production. By separating 3D-LSI technology into elementary technologies such as (1) through silicon via (TSV) formation, (2) bump formation, (3) wafer thinning, (4) chip/wafer alignment, and (5) chip/wafer stacking and reconstructing the entire process and structure, many methods to realize 3D-LSI devices can be developed. However, by considering a specific application, the supply chain of base wafers, and the purpose of 3D integration, a few suitable combinations can be identified. In this paper, we focus on the application of 3D-LSI technologies to image sensors. We describe the process and structure of the chip size package (CSP), developed on the basis of current and advanced 3D-LSI technologies, to be used in CMOS image sensors. Using the current LSI technologies, CSPs for 1.3 M, 2 M, and 5 M pixel CMOS image sensors were successfully fabricated without any performance degradation. 3D-LSI devices can be potentially employed in high-performance focal-plane-array image sensors. We propose a high-speed image sensor with an optical fill factor of 100% to be developed using next-generation 3D-LSI technology and fabricated using micro(μ)-bumps and micro(μ)-TSVs.

  19. Effect of heat treatment on anodic activation of aluminium by trace element indium

    Energy Technology Data Exchange (ETDEWEB)

    Graver, Brit [Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491 Trondheim (Norway); Helvoort, Antonius T.J. van [Department of Physics, Norwegian University of Science and Technology, N-7491 Trondheim (Norway); Nisancioglu, Kemal, E-mail: kemal.nisancioglu@material.ntnu.n [Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491 Trondheim (Norway)

    2010-11-15

    Research highlights: {yields} Indium segregation activates AlIn alloy surface anodically in chloride solution. {yields} Enrichment of In on Al surface can occur thermally by heat treatment at 300 {sup o}C. {yields} Increasing temperature homogenises indium in aluminium reducing anodic activation. {yields} Indium can activate AlIn surface by segregating through dealloying of aluminium. {yields} Anodic activation is caused by AlIn amalgam formation at aluminium surface. - Abstract: The presence of trace elements in Group IIIA-VA is known to activate aluminium anodically in chloride environment. The purpose of this paper is to investigate the surface segregation of trace element In by heat treatment and resulting surface activation. Model binary AlIn alloys, containing 20 and 1000 ppm by weight of In, were characterized after heat treatment at various temperatures by use of glow discharge optical emission spectroscopy, electron microscopy and electrochemical polarization. Heat treatment for 1 h at 300 {sup o}C gave significant segregation of discrete In particles (thermal segregation), which activated the surface. Indium in solid solution with aluminium, obtained by 1 h heat treatment at 600 {sup o}C, also activated by surface segregation of In on alloy containing 1000 ppm In, resulting from the selective dissolution of the aluminium component during anodic oxidation (anodic segregation). The effect of anodic segregation was reduced by decreasing indium concentration in solid solution; it had negligible effect at the 20 ppm level. The segregated particles were thought to form a liquid phase alloy with aluminium during anodic polarization, which in turn, together with the chloride in the solution destabilized the oxide.

  20. Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

    KAUST Repository

    Lee, Kyu-Sung

    2012-05-22

    A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive layer of poly (3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester, a power conversion efficiency of 3.67% was obtained, a value comparable to devices having sputtered ITO electrode. Surface roughness and optical efficiency are improved when using the mixed TiO2−x–ITO electrode. The consumption of less indium allows for lower fabrication cost of such mixed thin filmelectrode.