Functional imaging of murine hearts using accelerated self-gated UTE cine MRI

NARCIS (Netherlands)

Motaal, Abdallah G.; Noorman, Nils; de Graaf, Wolter L.; Hoerr, Verena; Florack, Luc M. J.; Nicolay, Klaas; Strijkers, Gustav J.

2015-01-01

We introduce a fast protocol for ultra-short echo time (UTE) Cine magnetic resonance imaging (MRI) of the beating murine heart. The sequence involves a self-gated UTE with golden-angle radial acquisition and compressed sensing reconstruction. The self-gated acquisition is performed asynchronously

Sensitivity of quantitative UTE MRI to the biomechanical property of the temporomandibular joint disc

International Nuclear Information System (INIS)

Bae, Won C.; Biswas, Reni; Statum, Sheronda; Sah, Robert L.; Chung, Christine B.

2014-01-01

To quantify MR properties of discs from cadaveric human temporomandibular joints (TMJ) using quantitative conventional and ultrashort time-to-echo magnetic resonance imaging (UTE MRI) techniques and to corroborate regional variation in the MR properties with that of biomechanical indentation stiffness. This study was exempt from the institutional review board approval. Cadaveric (four donors, two females, 74 ± 10.7 years) TMJs were sliced (n = 14 slices total) sagittally and imaged using quantitative techniques of conventional spin echo T2 (SE T2), UTE T2*, and UTE T1rho. The discs were then subjected to biomechanical indentation testing, which is performed by compressing the tissue with the blunt end of a small solid cylinder. Regional variations in MR and indentation stiffness were correlated. TMJ of a healthy volunteer was also imaged to show in vivo feasibility. Using the ME SE T2 and the UTE T1rho techniques, a significant (each p 2 = 0.42) than SE T2 (R 2 = 0.19) or UTE T2* (R 2 = 0.02, p = 0.1) techniques. The UTE T1rho technique, applicable in vivo, facilitated quantitative evaluation of TMJ discs and showed a high sensitivity to biomechanical softening of the TMJ discs. With additional work, the technique may become a useful surrogate measure for loss of biomechanical integrity of TMJ discs reflecting degeneration. (orig.)

Sensitivity of quantitative UTE MRI to the biomechanical property of the temporomandibular joint disc

Energy Technology Data Exchange (ETDEWEB)

Bae, Won C.; Biswas, Reni; Statum, Sheronda [University of California-San Diego, Department of Radiology, San Diego, CA (United States); Sah, Robert L. [University of California-San Diego, Department of Bioengineering, La Jolla, CA (United States); Chung, Christine B. [University of California-San Diego, Department of Radiology, San Diego, CA (United States); VA San Diego Healthcare System, Department of Radiology, San Diego, CA (United States)

2014-09-15

To quantify MR properties of discs from cadaveric human temporomandibular joints (TMJ) using quantitative conventional and ultrashort time-to-echo magnetic resonance imaging (UTE MRI) techniques and to corroborate regional variation in the MR properties with that of biomechanical indentation stiffness. This study was exempt from the institutional review board approval. Cadaveric (four donors, two females, 74 ± 10.7 years) TMJs were sliced (n = 14 slices total) sagittally and imaged using quantitative techniques of conventional spin echo T2 (SE T2), UTE T2*, and UTE T1rho. The discs were then subjected to biomechanical indentation testing, which is performed by compressing the tissue with the blunt end of a small solid cylinder. Regional variations in MR and indentation stiffness were correlated. TMJ of a healthy volunteer was also imaged to show in vivo feasibility. Using the ME SE T2 and the UTE T1rho techniques, a significant (each p < 0.0001) inverse relation between MR and indentation stiffness properties was observed for the data in the lower range of stiffness. However, the strength of correlation was significantly higher (p < 0.05) for UTE T1rho (R{sup 2} = 0.42) than SE T2 (R{sup 2} = 0.19) or UTE T2* (R{sup 2} = 0.02, p = 0.1) techniques. The UTE T1rho technique, applicable in vivo, facilitated quantitative evaluation of TMJ discs and showed a high sensitivity to biomechanical softening of the TMJ discs. With additional work, the technique may become a useful surrogate measure for loss of biomechanical integrity of TMJ discs reflecting degeneration. (orig.)

A novel segmentation approach for implementation of MRAC in head PET/MRI employing Short-TE MRI and 2-point Dixon method in a fuzzy C-means framework

Energy Technology Data Exchange (ETDEWEB)

Khateri, Parisa; Rad, Hamidreza Saligheh [Department of Medical Physics and Biomedical Engineering, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of); Research Center for Molecular and Cellular Imaging, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of); Jafari, Amir Homayoun [Department of Medical Physics and Biomedical Engineering, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of); Ay, Mohammad Reza, E-mail: mohammadreza_ay@tums.ac.ir [Department of Medical Physics and Biomedical Engineering, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of); Research Center for Molecular and Cellular Imaging, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of)

2014-01-11

Quantitative PET image reconstruction requires an accurate map of attenuation coefficients of the tissue under investigation at 511 keV (μ-map), and in order to correct the emission data for attenuation. The use of MRI-based attenuation correction (MRAC) has recently received lots of attention in the scientific literature. One of the major difficulties facing MRAC has been observed in the areas where bone and air collide, e.g. ethmoidal sinuses in the head area. Bone is intrinsically not detectable by conventional MRI, making it difficult to distinguish air from bone. Therefore, development of more versatile MR sequences to label the bone structure, e.g. ultra-short echo-time (UTE) sequences, certainly plays a significant role in novel methodological developments. However, long acquisition time and complexity of UTE sequences limit its clinical applications. To overcome this problem, we developed a novel combination of Short-TE (ShTE) pulse sequence to detect bone signal with a 2-point Dixon technique for water–fat discrimination, along with a robust image segmentation method based on fuzzy clustering C-means (FCM) to segment the head area into four classes of air, bone, soft tissue and adipose tissue. The imaging protocol was set on a clinical 3 T Tim Trio and also 1.5 T Avanto (Siemens Medical Solution, Erlangen, Germany) employing a triple echo time pulse sequence in the head area. The acquisition parameters were as follows: TE1/TE2/TE3=0.98/4.925/6.155 ms, TR=8 ms, FA=25 on the 3 T system, and TE1/TE2/TE3=1.1/2.38/4.76 ms, TR=16 ms, FA=18 for the 1.5 T system. The second and third echo-times belonged to the Dixon decomposition to distinguish soft and adipose tissues. To quantify accuracy, sensitivity and specificity of the bone segmentation algorithm, resulting classes of MR-based segmented bone were compared with the manual segmented one by our expert neuro-radiologist. Results for both 3 T and 1.5 T systems show that bone segmentation applied in several

A novel segmentation approach for implementation of MRAC in head PET/MRI employing Short-TE MRI and 2-point Dixon method in a fuzzy C-means framework

Science.gov (United States)

Khateri, Parisa; Rad, Hamidreza Saligheh; Jafari, Amir Homayoun; Ay, Mohammad Reza

2014-01-01

Quantitative PET image reconstruction requires an accurate map of attenuation coefficients of the tissue under investigation at 511 keV (μ-map), and in order to correct the emission data for attenuation. The use of MRI-based attenuation correction (MRAC) has recently received lots of attention in the scientific literature. One of the major difficulties facing MRAC has been observed in the areas where bone and air collide, e.g. ethmoidal sinuses in the head area. Bone is intrinsically not detectable by conventional MRI, making it difficult to distinguish air from bone. Therefore, development of more versatile MR sequences to label the bone structure, e.g. ultra-short echo-time (UTE) sequences, certainly plays a significant role in novel methodological developments. However, long acquisition time and complexity of UTE sequences limit its clinical applications. To overcome this problem, we developed a novel combination of Short-TE (ShTE) pulse sequence to detect bone signal with a 2-point Dixon technique for water-fat discrimination, along with a robust image segmentation method based on fuzzy clustering C-means (FCM) to segment the head area into four classes of air, bone, soft tissue and adipose tissue. The imaging protocol was set on a clinical 3 T Tim Trio and also 1.5 T Avanto (Siemens Medical Solution, Erlangen, Germany) employing a triple echo time pulse sequence in the head area. The acquisition parameters were as follows: TE1/TE2/TE3=0.98/4.925/6.155 ms, TR=8 ms, FA=25 on the 3 T system, and TE1/TE2/TE3=1.1/2.38/4.76 ms, TR=16 ms, FA=18 for the 1.5 T system. The second and third echo-times belonged to the Dixon decomposition to distinguish soft and adipose tissues. To quantify accuracy, sensitivity and specificity of the bone segmentation algorithm, resulting classes of MR-based segmented bone were compared with the manual segmented one by our expert neuro-radiologist. Results for both 3 T and 1.5 T systems show that bone segmentation applied in several

The crystal structures and powder diffraction patterns of the uranium tellurides

Energy Technology Data Exchange (ETDEWEB)

Snyder, R.L. (State Univ. of New York, Alfred, NY (USA). Inst. of Ceramic Superconductivity); Nichols, M.C.; Boehme, D.R. (Sandia National Labs., Livermore, CA (USA))

1990-10-03

A critical review of all of the reported structures and powder diffraction patterns in the uranium telluride system has been undertaken. Structures that are correct: Cubic -- UTe: no experimental pattern exists. Retain calculated 15--865. Cubic --U{sub 3}Te{sub 4}: retain the poor quality 12--610 but adopt the pattern calculated here. Cubic U{sub 2}Te{sub 3}: no experimental pattern exists. Adopt pattern calculated here. Orthorhombic UTe{sub 2}: Adopt the new pattern of Boehme et al. Monoclinic {alpha}UTe{sub 3} Adopt the new pattern of Boehme et al. Monoclinic {alpha}UTe{sub 3} Adopt the new pattern of Boehme et al. Orthorhombic {beta}UTe{sub 3}: Adopt pattern calculated here. Orthorhombic UTe{sub 5}: Adopt the new pattern of Boehme et al. Structures in need of refinement: Orthorhombic U{sub 2}Te{sub 3}:Adopt pattern calculated here over 34--807. Hexagonal U{sub 7}Te{sub 12}: Adopt pattern calculated here but retain 24--1368. Orthorhombic UTe{sub 1.78}: Adopt pattern calculated here and retain our modified 21--1404 reported for U{sub 4}Te{sub 7}. Orthorhombic UTe{sub 2.5}: Adopt pattern calculated here. Orthorhombic UTe{sub 3.4}: Accept recent pattern of Boehme et al. Phases for which no structures or reliable patterns exist: Orthorhombic U{sub 3}Te{sub 4}: no published pattern. Tetragonal U{sub 3}Te{sub 5}: three patterns 21--1407, 34--766 and 34--896 exit but all are of very poor quality. Phases which probably do not exist: Tetragonal UTe{sub 1.78}, Tetragonal UTe{sub 2}, Cubic UTe{sub 2} U{sub 3}Te{sub 7}(21--1402), U{sub 3}Te{sub 8}(21--1406).

Skull segmentation of UTE MR images by probabilistic neural network for attenuation correction in PET/MR

Energy Technology Data Exchange (ETDEWEB)

Santos Ribeiro, A. [Institute of Biophysics and Biomedical Engineering, Lisbon (Portugal); Forschungszentrum Juelich, INM4, Juelich (Germany); Rota Kops, E., E-mail: e.rota.kops@fz-juelich.de [Forschungszentrum Juelich, INM4, Juelich (Germany); Herzog, H. [Forschungszentrum Juelich, INM4, Juelich (Germany); Almeida, P. [Institute of Biophysics and Biomedical Engineering, Lisbon (Portugal)

2013-02-21

Aim: Due to space and technical limitations in PET/MR scanners one of the difficulties is the generation of an attenuation correction (AC) map to correct the PET image data. Different methods have been suggested that make use of the images acquired with an ultrashort echo time (UTE) sequence. However, in most of them precise thresholds need to be defined and these may depend on the sequence parameters. In this study an algorithm based on a probabilistic neural network (PNN) is presented requiring little user interaction. Material and methods: An MR UTE sequence delivering two images (UTE1 and UTE2) by using two different echo times (0.07 ms and 2.46 ms, respectively) was acquired. The input features for the PNN algorithm consist of two patches of MR intensities chosen in both the co-registered UTE1 and UTE2 images. At the end, the PNN generates an image classified into four different classes: brain+soft tissue, air, csf, and bone. CT and MR data were acquired in four subjects, whereby the CT data were used for comparison. For each patient co-classification of the different classified classes and the Dice coefficients (D) were calculated between the MR segmented image and the respective CT image. Results: An overall voxel classification accuracy (compared with CT) of 92% was obtained. Also, the resulting D with regard to the skull and calculated for the four subjects show a mean of 0.83 and a standard deviation of 0.07. Discussion: Our results show that a reliable bone segmentation of MRI images as well as the generation of a reliable attenuation map is possible. Conclusion: The developed algorithms possess several advantages over current methods using UTE sequence such as a quick and an easy optimization for different sequence parameters.

Skull segmentation of UTE MR images by probabilistic neural network for attenuation correction in PET/MR

International Nuclear Information System (INIS)

Santos Ribeiro, A.; Rota Kops, E.; Herzog, H.; Almeida, P.

2013-01-01

Aim: Due to space and technical limitations in PET/MR scanners one of the difficulties is the generation of an attenuation correction (AC) map to correct the PET image data. Different methods have been suggested that make use of the images acquired with an ultrashort echo time (UTE) sequence. However, in most of them precise thresholds need to be defined and these may depend on the sequence parameters. In this study an algorithm based on a probabilistic neural network (PNN) is presented requiring little user interaction. Material and methods: An MR UTE sequence delivering two images (UTE1 and UTE2) by using two different echo times (0.07 ms and 2.46 ms, respectively) was acquired. The input features for the PNN algorithm consist of two patches of MR intensities chosen in both the co-registered UTE1 and UTE2 images. At the end, the PNN generates an image classified into four different classes: brain+soft tissue, air, csf, and bone. CT and MR data were acquired in four subjects, whereby the CT data were used for comparison. For each patient co-classification of the different classified classes and the Dice coefficients (D) were calculated between the MR segmented image and the respective CT image. Results: An overall voxel classification accuracy (compared with CT) of 92% was obtained. Also, the resulting D with regard to the skull and calculated for the four subjects show a mean of 0.83 and a standard deviation of 0.07. Discussion: Our results show that a reliable bone segmentation of MRI images as well as the generation of a reliable attenuation map is possible. Conclusion: The developed algorithms possess several advantages over current methods using UTE sequence such as a quick and an easy optimization for different sequence parameters

Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O. [CINVESTAV-IPN, Physics Department, Apdo. Postal 14-740, Mexico (Mexico); Medina-Torres, A.C. [Escuela Superior de Fisica y Matematicas del IPN, Mexico (Mexico)

2014-11-12

CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

Quantitative 3D ultrashort time-to-echo (UTE) MRI and micro-CT (μCT) evaluation of the temporomandibular joint (TMJ) condylar morphology

Energy Technology Data Exchange (ETDEWEB)

Geiger, Daniel [Sapienza University of Rome, Department of Radiological, Oncological and Pathological Sciences, Rome (Italy); Bae, Won C.; Statum, Sheronda; Du, Jiang; Chung, Christine B. [University of California-San Diego, Department of Radiology, San Diego, CA (United States)

2014-01-15

Temporomandibular dysfunction involves osteoarthritis of the TMJ, including degeneration and morphologic changes of the mandibular condyle. The purpose of this study was to determine the accuracy of novel 3D-UTE MRI versus micro-CT (μCT) for quantitative evaluation of mandibular condyle morphology. Nine TMJ condyle specimens were harvested from cadavers (2 M, 3 F; age 85 ± 10 years, mean ± SD). 3D-UTE MRI (TR = 50 ms, TE = 0.05 ms, 104-μm isotropic-voxel) was performed using a 3-T MR scanner and μCT (18-μm isotropic-voxel) was also performed. MR datasets were spatially registered with a μCT dataset. Two observers segmented bony contours of the condyles. Fibrocartilage was segmented on the MR dataset. Using a custom program, bone and fibrocartilage surface coordinates, Gaussian curvature, volume of segmented regions, and fibrocartilage thickness were determined for quantitative evaluation of joint morphology. Agreement between techniques (MRI vs. μCT) and observers (MRI vs. MRI) for Gaussian curvature, mean curvature, and segmented volume of the bone were determined using intraclass correlation coefficient (ICC) analysis. Between MRI and μCT, the average deviation of surface coordinates was 0.19 ± 0.15 mm, slightly higher than the spatial resolution of MRI. Average deviation of the Gaussian curvature and volume of segmented regions, from MRI to μCT, was 5.7 ± 6.5 % and 6.6 ± 6.2 %, respectively. ICC coefficients (MRI vs. μCT) for Gaussian curvature, mean curvature, and segmented volumes were 0.892, 0.893, and 0.972, respectively. Between observers (MRI vs. MRI), the ICC coefficients were 0.998, 0.999, and 0.997, respectively. Fibrocartilage thickness was 0.55 ± 0.11 mm, as previously described in the literature for grossly normal TMJ samples. 3D-UTE MR quantitative evaluation of TMJ condyle morphology ex-vivo, including surface, curvature, and segmented volume, shows high correlation against μCT and between observers. In addition, UTE MRI allows

Correction of echo shift in reconstruction processing for ultra-short TE pulse sequence

International Nuclear Information System (INIS)

Takizawa, Masahiro; Ootsuka, Takehiro; Abe, Takayuki; Takahashi, Tetsuhiko

2010-01-01

An ultra-short echo time (TE) pulse sequence is composed of a radial sampling that acquires echo signals radially in the K-space and a half-echo acquisition that acquires only half of the echo signal. The shift in the position of the echo signal (echo shift) caused by the timing errors in the gradient magnetic field pulses affects the image quality in the radial sampling with the half-echo acquisition. To improve image quality, we have developed a signal correction algorithm that detects and eliminates this echo shift during reconstruction by performing a pre-scan within 10 seconds. The results showed that image quality is improved under oblique and/or off-centering conditions that frequently cause image distortion due to hardware error. In conclusion, we have developed a robust ultra-short TE pulse sequence that allows wide latitude in the scan parameters, including oblique and off-centering conditions. (author)

Pulse shaping system research of CdZnTe radiation detector for high energy x-ray diagnostic

Science.gov (United States)

Li, Miao; Zhao, Mingkun; Ding, Keyu; Zhou, Shousen; Zhou, Benjie

2018-02-01

As one of the typical wide band-gap semiconductor materials, the CdZnTe material has high detection efficiency and excellent energy resolution for the hard X-ray and the Gamma ray. The generated signal of the CdZnTe detector needs to be transformed to the pseudo-Gaussian pulse with a small impulse-width to remove noise and improve the energy resolution by the following nuclear spectrometry data acquisition system. In this paper, the multi-stage pseudo-Gaussian shaping-filter has been investigated based on the nuclear electronic principle. The optimized circuit parameters were also obtained based on the analysis of the characteristics of the pseudo-Gaussian shaping-filter in our following simulations. Based on the simulation results, the falling-time of the output pulse was decreased and faster response time can be obtained with decreasing shaping-time τs-k. And the undershoot was also removed when the ratio of input resistors was set to 1 to 2.5. Moreover, a two stage sallen-key Gaussian shaping-filter was designed and fabricated by using a low-noise voltage feedback operation amplifier LMH6628. A detection experiment platform had been built by using the precise pulse generator CAKE831 as the imitated radiation pulse which was equivalent signal of the semiconductor CdZnTe detector. Experiment results show that the output pulse of the two stage pseudo-Gaussian shaping filter has minimum 200ns pulse width (FWHM), and the output pulse of each stage was well consistent with the simulation results. Based on the performance in our experiment, this multi-stage pseudo-Gaussian shaping-filter can reduce the event-lost caused by pile-up in the CdZnTe semiconductor detector and improve the energy resolution effectively.

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

Science.gov (United States)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

2015-07-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W; Decker, Ulrich; Rauschenbach, Bernd

2015-01-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ∼21% and 3–4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications. (paper)

Combustion synthesis and characterization of uranium and thorium tellurides

International Nuclear Information System (INIS)

Czechowicz, D.G.

1985-10-01

This report describes an investigation of the chemical systems uranium-tellurium and thorium-tellurium. A novel synthesis technique, combustion synthesis, which uses the exothermic heat of reaction rather than externally supplied heat, was utilized to form the phases UTe, U 3 Te 4 , and UTe 2 in the U-Te system and the phases ThTe, Th 2 Te 3 , and ThTe 2 in the Th-Te system from reactions of the type U/sub x/ + Te/sub y/ = U/sub x/Te/sub y/. With this synthetic method, U-Te and Th-Te products could be formed in a matter of seconds, and the purity of the products was often greater than that of the starting materials used. Control over final product stoichiometry was found to be very difficult. The product phase distribution observed in combustion products, as determined by x-ray diffraction, electron microprobe, and optical metallographic methods, was found to be spatially complex. Lattice constants were calculated from x-ray diffraction patterns for the compounds UTe, U 3 Te 4 , and ThTe. SOLGASMIX thermodynamic equilibrium calculations were performed using available and estimated thermodynamic data on the system U-Te-O in an attempt to understand the products formed by combustion. Adiabatic combustion reaction temperatures for specific U-Te and Th-Te reactions were also calculated utilizing available and estimated thermodynamic data. 71 refs., 31 figs., 15 tabs

Variable flip angle 3D ultrashort echo time (UTE) T1 mapping of mouse lung: A repeatability assessment.

Science.gov (United States)

Alamidi, Daniel F; Smailagic, Amir; Bidar, Abdel W; Parker, Nicole S; Olsson, Marita; Hockings, Paul D; Lagerstrand, Kerstin M; Olsson, Lars E

2018-03-08

Lung T 1 is a potential translational biomarker of lung disease. The precision and repeatability of variable flip angle (VFA) T 1 mapping using modern 3D ultrashort echo time (UTE) imaging of the whole lung needs to be established before it can be used to assess response to disease and therapy. To evaluate the feasibility of regional lung T 1 quantification with VFA 3D-UTE and to investigate long- and short-term T 1 repeatability in the lungs of naive mice. Prospective preclinical animal study. Eight naive mice and phantoms. 3D free-breathing radial UTE (8 μs) at 4.7T. VFA 3D-UTE T 1 calculations were validated against T 1 values measured with inversion recovery (IR) in phantoms. Lung T 1 and proton density (S 0 ) measurements of whole lung and muscle were repeated five times over 1 month in free-breathing naive mice. Two consecutive T 1 measurements were performed during one of the imaging sessions. Agreement in T 1 between VFA 3D-UTE and IR in phantoms was assessed using Bland-Altman and Pearson 's correlation analysis. The T 1 repeatability in mice was evaluated using coefficient of variation (CV), repeated-measures analysis of variance (ANOVA), and paired t-test. Good T 1 agreement between the VFA 3D-UTE and IR methods was found in phantoms. T 1 in lung and muscle showed a 5% and 3% CV (1255 ± 63 msec and 1432 ± 42 msec, respectively, mean ± SD) with no changes in T 1 or S 0 over a month. Consecutive measurements resulted in an increase of 2% in both lung T 1 and S 0 . VFA 3D-UTE shows promise as a reliable T 1 mapping method that enables full lung coverage, high signal-to-noise ratio (∼25), and spatial resolution (300 μm) in freely breathing animals. The precision of the VFA 3D-UTE method will enable better design and powering of studies. 1 Technical Efficacy: Stage 2 J. Magn. Reson. Imaging 2018. © 2018 International Society for Magnetic Resonance in Medicine.

Radial Ultrashort TE Imaging Removes the Need for Breath-Holding in Hepatic Iron Overload Quantification by R2* MRI.

Science.gov (United States)

Tipirneni-Sajja, Aaryani; Krafft, Axel J; McCarville, M Beth; Loeffler, Ralf B; Song, Ruitian; Hankins, Jane S; Hillenbrand, Claudia M

2017-07-01

The objective of this study is to evaluate radial free-breathing (FB) multiecho ultrashort TE (UTE) imaging as an alternative to Cartesian FB multiecho gradient-recalled echo (GRE) imaging for quantitative assessment of hepatic iron content (HIC) in sedated patients and subjects unable to perform breath-hold (BH) maneuvers. FB multiecho GRE imaging and FB multiecho UTE imaging were conducted for 46 test group patients with iron overload who could not complete BH maneuvers (38 patients were sedated, and eight were not sedated) and 16 control patients who could complete BH maneuvers. Control patients also underwent standard BH multiecho GRE imaging. Quantitative R2* maps were calculated, and mean liver R2* values and coefficients of variation (CVs) for different acquisitions and patient groups were compared using statistical analysis. FB multiecho GRE images displayed motion artifacts and significantly lower R2* values, compared with standard BH multiecho GRE images and FB multiecho UTE images in the control cohort and FB multiecho UTE images in the test cohort. In contrast, FB multiecho UTE images produced artifact-free R2* maps, and mean R2* values were not significantly different from those measured by BH multiecho GRE imaging. Motion artifacts on FB multiecho GRE images resulted in an R2* CV that was approximately twofold higher than the R2* CV from BH multiecho GRE imaging and FB multiecho UTE imaging. The R2* CV was relatively constant over the range of R2* values for FB multiecho UTE, but it increased with increases in R2* for FB multiecho GRE imaging, reflecting that motion artifacts had a stronger impact on R2* estimation with increasing iron burden. FB multiecho UTE imaging was less motion sensitive because of radial sampling, produced excellent image quality, and yielded accurate R2* estimates within the same acquisition time used for multiaveraged FB multiecho GRE imaging. Thus, FB multiecho UTE imaging is a viable alternative for accurate HIC assessment

Decree 284/12. It regulate the servitudes prescribed by decree law 10.383 referring of UTE conduction lines energy

International Nuclear Information System (INIS)

2012-01-01

This decree is about the UTE transmission line which integrate the Uruguayan National Electricity System. This regulation are able to allow an increasing energy demand as well as a better public service, a main purpose of UTE.

Ablation of CdTe with 100 μs Nd:YAG laser pulses: dependence on target preparation method

International Nuclear Information System (INIS)

Rzeszutek, J.; Savchuk, V.; Oszwaldowski, M.

2008-01-01

The results of experimental studies of the ablation of CdTe with a pulsed Nd:YAG laser (wavelength 1064 nm) performed with 100 μs pulses and repetition time of 35 Hz are presented for the pulse energy range from 0.13 to 0.25 J. The main goal is to elucidate the dependence of the ablation process on the target preparation method. The investigation of the vapour stream intensity and chemical composition and their evolution with time are performed with a quadrupole mass spectrometer synchronized with the laser pulses. These studies are performed for three kinds of targets: a target made of CdTe bulk crystal (BC target), a target made of CdTe fine powder pressed under the pressure of 700 atm (PP target), and a target made of loose CdTe powder (N-PP target). The applicability of these targets for obtaining high quality CdTe thin films is determined. The best chemical composition of the vapour stream can be obtained with the BC target. A major drawback of this target is the energetic threshold for ablation with Nd:YAG laser and resulting delay in the ablation process above the threshold. The advantage of powder targets over BC target is the lack of any ablation threshold or delay. Weaker angular dependence of the particle emission (associated with the surface roughness), if confirmed in further experiments, can be the most important advantage of PP and N-PP targets. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Comparison of optical transients during the picosecond laser pulse-induced crystallization of GeSbTe and AgInSbTe phase-change thin films: Nucleation-driven versus growth-driven processes

Energy Technology Data Exchange (ETDEWEB)

Liang, Guangfei [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, Simian [State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275 (China); Huang, Huan [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Wang, Yang, E-mail: ywang@siom.ac.cn [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Lai, Tianshu, E-mail: stslts@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275 (China); Wu, Yiqun [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

2013-09-01

Direct comparison of the real-time in-situ crystallization behavior of as-deposited amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} (GeSbTe) and Ag{sub 8}In{sub 14}Sb{sub 55}Te{sub 23} (AgInSbTe) phase-change thin films driven by picosecond laser pulses was performed by a time-resolved optical pump-probe technique with nanosecond resolution. Different optical transients showed various crystallization processes because of the dissimilar nucleation- and growth-dominated mechanisms of the two materials. The effects of laser pulse fluence, thermal conductive structure, and successive pulse irradiation on their crystallization dynamics were also discussed. A schematic was then established to describe the different crystallization processes beginning from the as-deposited amorphous state. The results may provide further insight into the phase-change mechanism under extra-non-equilibrium conditions and aid the development of ultrafast phase-change memory materials.

In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

KAUST Repository

Avila-Avendano, Jesus

2016-04-09

In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

KAUST Repository

Avila-Avendano, Jesus; Mejia, Israel; Alshareef, Husam N.; Guo, Zaibing; Young, Chadwin; Quevedo-Lopez, Manuel

2016-01-01

In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

PET/MR brain imaging: evaluation of clinical UTE-based attenuation correction

International Nuclear Information System (INIS)

Aasheim, Lars Birger; Karlberg, Anna; Goa, Paal Erik; Haaberg, Asta; Soerhaug, Sveinung; Fagerli, Unn-Merete; Eikenes, Live

2015-01-01

One of the greatest challenges in PET/MR imaging is that of accurate MR-based attenuation correction (AC) of the acquired PET data, which must be solved if the PET/MR modality is to reach its full potential. The aim of this study was to investigate the performance of Siemens' most recent version (VB20P) of MR-based AC of head PET data, by comparing it to CT-based AC. Methods: 18 F-FDG PET data from seven lymphoma and twelve lung cancer patients examined with a Biograph mMR PET/MR system were reconstructed with both CT-based and MR-based AC, avoiding sources of error arising when comparing PET data from different systems. The resulting images were compared quantitatively by measuring changes in mean SUV in ten different brain regions in both hemispheres, as well as the brainstem. In addition, the attenuation maps (μ maps) were compared regarding volume and localization of cranial bone. The UTE μ maps clearly overestimate the amount of bone in the neck, while slightly underestimating the amount of bone in the cranium, and the localization of bone in the cranial region also differ from the CT μ maps. In air/tissue interfaces in the sinuses and ears, the MRAC method struggles to correctly classify the different tissues. The misclassification of tissue is most likely caused by a combination of artefacts and the insufficiency of the UTE method to accurately separate bone. Quantitatively, this results in a combination of overestimation (0.5-3.6 %) and underestimation (2.7-5.2 %) of PET activity throughout the brain, depending on the proximity to the inaccurate regions. Our results indicate that the performance of the UTE method as implemented in VB20P is close to the theoretical maximum of such an MRAC method in the brain, while it does not perform satisfactorily in the neck or face/nasal area. Further improvement of the UTE MRAC or other available methods for more accurate segmentation of bone should be incorporated. (orig.)

MULTICOMPONENT SEISMIC ANALYSIS AND CALIBRATION TO IMPROVE RECOVERY FROM ALGAL MOUNDS: APPLICATION TO THE ROADRUNNER/TOWAOC AREA OF THE PARADOX BASIN, UTE MOUNTAIN UTE RESERVATION, COLORADO

International Nuclear Information System (INIS)

Paul La Pointe; Claudia Rebne; Steve Dobbs

2004-01-01

This report describes the results made in fulfillment of contract DE-FG26-02NT15451, ''Multicomponent Seismic Analysis and Calibration to Improve Recovery from Algal Mounds: Application to the Roadrunner/Towaoc Area of the Paradox Basin, Ute Mountain Ute Reservation, Colorado'', for the Second Biennial Report covering the time period May 1, 2003 through October 31, 2003. During this period, the project achieved two significant objectives: completion of the acquisition and processing design and specifications 3D9C seismic acquisition and the 3D VSP log; and completion of the permitting process involving State, Tribal and Federal authorities. Successful completion of these two major milestones pave the way for field acquisition as soon as weather permits in the Spring of 2004. This report primarily describes the design and specifications for the VSP and 3D9C surveys

Rapid pulse annealing of CdZnTe detectors for reducing electronic noise

Science.gov (United States)

Voss, Lars; Conway, Adam; Nelson, Art; Nikolic, Rebecca J.; Payne, Stephen A.; Swanberg, Jr., Erik Lars

2018-05-01

A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of .about.0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

Improved UTE-based attenuation correction for cranial PET-MR using dynamic magnetic field monitoring

International Nuclear Information System (INIS)

Aitken, A. P.; Giese, D.; Tsoumpas, C.; Schleyer, P.; Kozerke, S.; Prieto, C.; Schaeffter, T.

2014-01-01

Purpose: Ultrashort echo time (UTE) MRI has been proposed as a way to produce segmented attenuation maps for PET, as it provides contrast between bone, air, and soft tissue. However, UTE sequences require samples to be acquired during rapidly changing gradient fields, which makes the resulting images prone to eddy current artifacts. In this work it is demonstrated that this can lead to misclassification of tissues in segmented attenuation maps (AC maps) and that these effects can be corrected for by measuring the true k-space trajectories using a magnetic field camera. Methods: The k-space trajectories during a dual echo UTE sequence were measured using a dynamic magnetic field camera. UTE images were reconstructed using nominal trajectories and again using the measured trajectories. A numerical phantom was used to demonstrate the effect of reconstructing with incorrect trajectories. Images of an ovine leg phantom were reconstructed and segmented and the resulting attenuation maps were compared to a segmented map derived from a CT scan of the same phantom, using the Dice similarity measure. The feasibility of the proposed method was demonstrated inin vivo cranial imaging in five healthy volunteers. Simulated PET data were generated for one volunteer to show the impact of misclassifications on the PET reconstruction. Results: Images of the numerical phantom exhibited blurring and edge artifacts on the bone–tissue and air–tissue interfaces when nominal k-space trajectories were used, leading to misclassification of soft tissue as bone and misclassification of bone as air. Images of the tissue phantom and thein vivo cranial images exhibited the same artifacts. The artifacts were greatly reduced when the measured trajectories were used. For the tissue phantom, the Dice coefficient for bone in MR relative to CT was 0.616 using the nominal trajectories and 0.814 using the measured trajectories. The Dice coefficients for soft tissue were 0.933 and 0.934 for the

Microstructure evolution in pulsed laser deposited epitaxial Ge-Sb-Te chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Ross, Ulrich; Lotnyk, Andriy, E-mail: andriy.lotnyk@iom-leipzig.de; Thelander, Erik; Rauschenbach, Bernd

2016-08-15

The thin film deposition and structure of highly oriented telluride compounds is of particular interest for phase-change applications in next-generation non-volatile memory such as heterostructure designs, as well as for the investigation of novel optical, thermoelectric and ferroelectric properties in layered telluride compounds. In this work, epitaxial Ge-Sb-Te thin films were successfully produced by pulsed laser deposition on silicon with and without amorphous SiO{sub x} interlayer at elevated process temperatures from a Ge{sub 2}Sb{sub 2}Te{sub 5} target. Aberration-corrected high-resolution scanning transmission electron microscopy (STEM) imaging reveals a distinct interface configuration of the trigonal phase connected by a quasi van der Waals gap (vacancy) to the Sb/Te-passivated single crystalline Si substrate, yet also an intermediate textured growth regime in which the substrate symmetry is only weakly coupled to the thin film orientation, as well as strong deviation of composition at high deposition temperatures. Textured growth of Ge-Sb-Te thin film was also observed on SiO{sub x}/Si substrate with no evidence of an intermediate Sb/Te surface layer on top of an SiO{sub x} layer. In addition, particular defect structures formed by local reorganization of the stacking sequence across the vacancy gap are observed and appear to be intrinsic to these van der Waals-layered compounds. Theoretical image simulations of preferred stacking sequences can be matched to individual building blocks in the Ge-Sb-Te grain. - Highlights: • Atomic-resolution Cs-corrected STEM imaging of PLD deposited Ge-Sb-Te thin films. • Changing of overall composition with increasing deposition temperature. • Direct imaging of surface passivation Sb/Te layer at the Ge-Sb-Te/Si(111) interface. • The Sb/Te passivation layer is not a prerequisite for highly oriented growth of Ge-Sb-Te thin films.

On the crystal structures of USe2, UTe2, ThOTe, and Er2Se3 - a contribution to the crystal chemistry of rare earth and actinide chalcogenides

International Nuclear Information System (INIS)

Dausch, W.M.

1987-01-01

The dichalcogenides of rare earth metals and actinides were classified into isostructural compounds without considering their composition. The structures of of α-USe 2 , β-USe 2 , UTe 2 , and HoSe 2 as well as of ThOTe, Er 2 Se 3 , and UTe 3 were determined by X-ray diffraction of their crystals. The results demonstrate that α-USe 2 has a SrBr 2 -analog structure and a stoichiometric composition. The atomic parameters derived from powder data of ThOTe and UTe 2 could be confirmed by X-ray analysis of the crystalline compounds. ThOTe crystallizes into a PbFCl-analog structure. The order of atoms in UTe 2 is similar to that of the ZrSe 3 type. The crystals of ErSe 3 , UTe 3 , HoSe 2 , and β-USe 2 were investigated only by camera methods. As in the case of Er 2 Se 3 or UTe 3 twin formation could be observed in β-USe 3 . (orig./RB) [de

Efficient optical trapping of CdTe quantum dots by femtosecond laser pulses

KAUST Repository

Chiang, Weiyi

2014-12-11

The development in optical trapping and manipulation has been showing rapid progress, most of it is in the small particle sizes in nanometer scales, substituting the conventional continuous-wave lasers with high-repetition-rate ultrashort laser pulse train and nonlinear optical effects. Here, we evaluate two-photon absorption in optical trapping of 2.7 nm-sized CdTe quantum dots (QDs) with high-repetition-rate femtosecond pulse train by probing laser intensity dependence of both Rayleigh scattering image and the two-photon-induced luminescence spectrum of the optically trapped QDs. The Rayleigh scattering imaging indicates that the two-photon absorption (TPA) process enhances trapping ability of the QDs. Similarly, a nonlinear increase of the two-photon-induced luminescence with the incident laser intensity fairly indicates the existence of the TPA process.

Suspension kinematic analysis of UTeM’s FV Malaysia electric vehicle racing car

NARCIS (Netherlands)

Abdul Manaf, M.Z.; Latif, M.F.A.; Razak, M.S.A.; Hassan, M.Z.B.; Rosley, M.I.F.

2016-01-01

The purpose of this paper is to investigate the kinematic performance of students’ racing car, namely UTeM’s FV Malaysia Electric Vehicle. An elasto-kinematic analysis approach is used to predict the car’s performance during straight line drive and curvature drive. Two suspension design factors

Geologic map of the Ute Mountain 7.5' quadrangle, Taos County, New Mexico, and Conejos and Costilla Counties, Colorado

Science.gov (United States)

Thompson, Ren A.; Turner, Kenzie J.; Shroba, Ralph R.; Cosca, Michael A.; Ruleman, Chester A.; Lee, John P.; Brandt, Theodore R.

2014-01-01

The Ute Mountain 7.5' quadrangle is located in the south-central part of the San Luis Basin of northern New Mexico, in the Rio Grande del Norte National Monument, and contains deposits that record volcanic, tectonic, and associated alluvial and colluvial processes over the past four million years. Ute Mountain has the distinction of being one of the largest intermediate composition eruptive centers of the Taos Plateau, a largely volcanic tableland occupying the southern portion of the San Luis Basin. Ute Mountain rises to an elevation in excess of 3,000 m, nearly 700 m above the basaltic plateau at its base, and is characterized by three distinct phases of Pliocene eruptive activity recorded in the stratigraphy exposed on the flanks of the mountain and in the Rio Grande gorge. Unconformably overlain by largely flat-lying lava flows of Servilleta Basalt, the area surrounding Ute Mountain records a westward thickening of basin-fill volcanic deposits interstratified in the subsurface with Pliocene basin-fill sedimentary deposits derived from older Tertiary and Precambrian sources to the east. Superimposed on this volcanic stratigraphy are alluvial and colluvial deposits derived from the flanks of Ute Mountain and more distally-derived alluvium from the uplifted Sangre de Cristo Mountains to the east, that record a complex temporal and stratigraphic succession of Quaternary basin deposition and erosion. Pliocene and younger basin deposition was accommodated along predominantly north-trending fault-bounded grabens. These poorly exposed fault scarps cutting lava flows of Ute Mountain volcano. The Servilleta Basalt and younger surficial deposits record largely down-to-east basinward displacement. Faults are identified with varying confidence levels in the map area. Recognizing and mapping faults developed near the surface in young, brittle volcanic rocks is difficult because: (1) they tend to form fractured zones tens of meters wide rather than discrete fault planes, (2

k-space sampling optimization for ultrashort TE imaging of cortical bone: Applications in radiation therapy planning and MR-based PET attenuation correction

International Nuclear Information System (INIS)

Hu, Lingzhi; Traughber, Melanie; Su, Kuan-Hao; Pereira, Gisele C.; Grover, Anu; Traughber, Bryan; Muzic, Raymond F. Jr.

2014-01-01

Purpose: The ultrashort echo-time (UTE) sequence is a promising MR pulse sequence for imaging cortical bone which is otherwise difficult to image using conventional MR sequences and also poses strong attenuation for photons in radiation therapy and PET imaging. The authors report here a systematic characterization of cortical bone signal decay and a scanning time optimization strategy for the UTE sequence through k-space undersampling, which can result in up to a 75% reduction in acquisition time. Using the undersampled UTE imaging sequence, the authors also attempted to quantitatively investigate the MR properties of cortical bone in healthy volunteers, thus demonstrating the feasibility of using such a technique for generating bone-enhanced images which can be used for radiation therapy planning and attenuation correction with PET/MR. Methods: An angularly undersampled, radially encoded UTE sequence was used for scanning the brains of healthy volunteers. Quantitative MR characterization of tissue properties, including water fraction and R2 ∗ = 1/T2 ∗ , was performed by analyzing the UTE images acquired at multiple echo times. The impact of different sampling rates was evaluated through systematic comparison of the MR image quality, bone-enhanced image quality, image noise, water fraction, and R2 ∗ of cortical bone. Results: A reduced angular sampling rate of the UTE trajectory achieves acquisition durations in proportion to the sampling rate and in as short as 25% of the time required for full sampling using a standard Cartesian acquisition, while preserving unique MR contrast within the skull at the cost of a minimal increase in noise level. The R2 ∗ of human skull was measured as 0.2–0.3 ms −1 depending on the specific region, which is more than ten times greater than the R2 ∗ of soft tissue. The water fraction in human skull was measured to be 60%–80%, which is significantly less than the >90% water fraction in brain. High-quality, bone

MULTICOMPONENT SEISMIC ANALYSIS AND CALIBRATION TO IMPROVE RECOVERY FROM ALGAL MOUNDS: APPLICATION TO THE ROADRUNNER/TOWAOC AREA OF THE PARADOX BASIN, UTE MOUNTAIN UTE RESERVATION, COLORADO

International Nuclear Information System (INIS)

Paul La Pointe; Claudia Rebne; Steve Dobbs

2003-01-01

This report describes the results made in fulfillment of contract DE-FG26-02NT15451, ''Multicomponent Seismic Analysis and Calibration to Improve Recovery from Algal Mounds: Application to the Roadrunner/Towaoc Area of the Paradox Basin, Ute Mountain Ute Reservation, Colorado''. Optimizing development of highly heterogeneous reservoirs where porosity and permeability vary in unpredictable ways due to facies variations can be challenging. An important example of this is in the algal mounds of the Lower and Upper Ismay reservoirs of the Paradox Basin in Utah and Colorado. It is nearly impossible to develop a forward predictive model to delineate regions of better reservoir development, and so enhanced recovery processes must be selected and designed based upon data that can quantitatively or qualitatively distinguish regions of good or bad reservoir permeability and porosity between existing well control. Recent advances in seismic acquisition and processing offer new ways to see smaller features with more confidence, and to characterize the internal structure of reservoirs such as algal mounds. However, these methods have not been tested. This project will acquire cutting edge, three-dimensional, nine-component (3D9C) seismic data and utilize recently-developed processing algorithms, including the mapping of azimuthal velocity changes in amplitude variation with offset, to extract attributes that relate to variations in reservoir permeability and porosity. In order to apply advanced seismic methods a detailed reservoir study is needed to calibrate the seismic data to reservoir permeability, porosity and lithofacies. This will be done by developing a petrological and geological characterization of the mounds from well data; acquiring and processing the 3D9C data; and comparing the two using advanced pattern recognition tools such as neural nets. In addition, should the correlation prove successful, the resulting data will be evaluated from the perspective of

Investigation of ZnTe thin films grown by Pulsed Laser Deposition method

International Nuclear Information System (INIS)

Kotlyarchuk, B.; Savchuk, V.

2007-01-01

This paper is devoted to optimization of the Pulsed Laser Deposition (PLD) growth condition of ZnTe films on various substrates and subsequent investigation of relevant parameters of growth process, structural, optical and electrical properties of grown films. Studies of the effect of growth parameters on the structural quality and properties of grown films were carried out. X-ray diffraction measurements showed that the ZnTe films, which have been deposited at optimal substrate temperatures, were characterized by a (111) preferred orientation with large average grain size. The optical transmission and reflectance in the energy range 1.5-5.5 eV for films grown at various substrate temperatures were measured. We calculated the variation in the absorption coefficient with the photon energy from the transmittance spectrum for samples grown at various substrate temperatures. Obtained data were analyzed and the value of the absorption coefficient, for allowed direct transitions, has been determined as a function of photon energy. We found that the undoped ZnTe films, which were grown by the PLD method, are typically p-type and possess resistivity in the range of 10 3 Ωcm at room temperature. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.

Science.gov (United States)

Suk, Kyung-Suk; Jung, Ha-Na; Woo, Hee-Gweon; Park, Don-Hee; Kim, Do-Heyoung

2010-05-01

Ge-Sb-Te (GST) thin films were deposited on TiN, SiO2, and Si substrates by cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) using Ge{N(CH3)(C2H5)}, Sb(C3H7)3, Te(C3H7)3 as precursors in a vertical flow reactor. Plasma activated H2 was used as the reducing agent. The growth behavior was strongly dependent on the type of substrate. GST grew as a continuous film on TiN regardless of the substrate temperature. However, GST formed only small crystalline aggregates on Si and SiO2 substrates, not a continuous film, at substrate temperatures > or = 200 degrees C. The effects of the deposition temperature on the surface morphology, roughness, resistivity, crystallinity, and composition of the GST films were examined.

Rewritable phase-change optical recording in Ge2Sb2Te5 films induced by picosecond laser pulses

International Nuclear Information System (INIS)

Siegel, J.; Schropp, A.; Solis, J.; Afonso, C.N.; Wuttig, M.

2004-01-01

The phase transformation dynamics induced in Ge 2 Sb 2 Te 5 films by picosecond laser pulses were studied using real-time reflectivity measurements with subnanosecond resolution. Evidence was found that the thermal diffusivity of the substrate plays a crucial role in determining the ability of the films to crystallize and amorphize. A film/substrate configuration with optimized heat flow conditions for ultrafast phase cycling with picosecond laser pulses was designed and produced. In this system, we achieved reversible phase transformations with large optical contrast (>20%) using single laser pulses with a duration of 30 ps within well-defined fluence windows. The amorphization (writing) process is completed within less than 1 ns, whereas crystallization (erasing) needs approximately 13 ns to be completed

Evolution of local structure in Ag2O-TeO2 glasses with addition of Ag2O analyzed by pulsed neutron diffraction and Raman spectroscopy

International Nuclear Information System (INIS)

Iwadate, Yasuhiko; Suzuki, Mineta; Hattori, Takeo; Fukushima, Kazuko; Nishiyama, Shin; Misawa, Masakatsu; Fukunaga, Toshiharu; Itoh, Keiji

2005-01-01

The local structure of Ag 2 O-TeO 2 glasses was studied by time-of-flight pulsed neutron diffraction (TOF-PND) and Raman spectroscopy. The results of Raman spectroscopy indicated that TeO 4 trigonal bipyramidal units (tbp) were converted to TeO 3 trigonal pyramidal units (tp) by addition of Ag 2 O to TeO 2 . Furthermore in PND, the structural parameters for each atomic pair were optimized in the Q-space, and the distances of the near neighbor Te-O correlations forming tbp units and tp units in the network were estimated with some accuracy

Photoelectric properties by interface effect of organic/inorganic(CuPc/PbTe) multilayer prepared by pulsed laser deposition and thermal evaporation

CERN Document Server

Lee, H Y; Choi, B C; Jeong, J H; Tabata, H; Kawai, T

1999-01-01

Highly crystallized CuPc/PbTe multilayer are prepared at substrate temperature from room temperature to 300 .deg. C by pulsed laser deposition and thermal evaporation method. From the measurement of AFM image, these all film exhibits composed of round grains and flat matrix. For observation the interface effect of multilayer, we measured the transverse current-voltage characteristics in the dark and under illumination. The photocarrier is generated in the CuPc layer and the electron-hole pairs are separated by the steep incline of the potential near the CuPc/PbTe interface. The CuPc/PbTe multilayers in the in-plane current-voltage curve exhibit larger photoconduction effect than that of CuPc single layer.

The Ute Campaign of 1879: A Study in the Use of the Military Instrument

Science.gov (United States)

1993-06-04

theater--General Philip St. George Cooke--and he was relieved following the Fetterman massacre in December of that year."s The capabilities of a modern...Abbott, Stephen J. Leonard, David McComb, Colorado: A History of the Centennial State (Boulder: University Press of Colorado, 1982), 26. 65 33. John H...Nankivell, "Fort Garland, Colorado,- The Colorado Magazine 16 (January 1939): 13. 34. P. David Smith, Ouray: Chief of the Utes (Salt Lake City

Optimization of electrodeposited p-doped Sb{sub 2}Te{sub 3} thermoelectric films by millisecond potentiostatic pulses

Energy Technology Data Exchange (ETDEWEB)

Schumacher, Christian; Akinsinde, Lewis; Zastrow, Sebastian; Heiderich, Sonja; Toellner, William; Nielsch, Kornelius; Bachmann, Julien [Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany); Reinsberg, Klaus G.; Broekaert, Jose A.C. [Institute of Applied and Inorganic Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, 20146 Hamburg (Germany); Rampelberg, Geert; Detavernier, Christophe [Department of Solid State Sciences, University of Ghent, Krijgslaan 281/S1, 9000 Ghent (Belgium)

2012-03-15

A systematic optimization of p-type Sb{sub 2}Te{sub 3} thermoelectric films made by potentiostatic electrodeposition on Au and stainless steel substrates is presented. The influence of the preparative parameters of deposition voltage, concentration, and the deposition method are investigated in a nitric acid solution. As a postdeposition step, the influence of annealing the films is investigated. The use of a potential-controlled millisecond-pulsed deposition method could improve both the morphology and the composition of the films. The samples are characterized in terms of composition, crystallinity, Seebeck coefficient, and electrical resistivity. Pulsed-deposited films exhibit Seebeck coefficients of up to 160 {mu}V K{sup -1} and an electrical conductivity of 280 S cm{sup -1} at room temperature, resulting in power factors of about 700 {mu}W m{sup -1} K{sup -2}. After annealing, power factors of maximum 852 {mu}W m{sup -1} K{sup -2} are achieved. Although the annealing of DC-deposited films significantly increased the power factor, they do not reach the values of the pulsed-deposited films in the preannealing state. Structural analysis is performed with X-ray diffraction and shows the crystalline structure of Sb{sub 2}Te{sub 3} films. The performance is tuned by annealing of deposited films up to 300 C under He atmosphere while performing in-situ X-ray diffraction and resistivity measurements. The chemical analysis of the films is performed by inductively coupled plasma optical emission spectroscopy (ICP-OES) as well as scanning electron microscope energy dispersive X-ray analysis (SEM-EDX). (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Low temperature epitaxy of Ge-Sb-Te films on BaF{sub 2} (111) by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Thelander, E., E-mail: erik.thelander@iom-leipzig.de; Gerlach, J. W.; Ross, U.; Lotnyk, A.; Rauschenbach, B. [Leibniz-Institut für Oberflächenmodifizierung e.V., Leipzig 04318 (Germany)

2014-12-01

Pulsed laser deposition was employed to deposit epitaxial Ge{sub 2}Sb{sub 2}Te{sub 5}-layers on the (111) plane of BaF{sub 2} single crystal substrates. X-ray diffraction measurements show a process temperature window for epitaxial growth between 85 °C and 295 °C. No crystalline growth is observed for lower temperatures, whereas higher temperatures lead to strong desorption of the film constituents. The films are of hexagonal structure with lattice parameters consistent with existing models. X-ray pole figure measurements reveal that the films grow with one single out-of-plane crystal orientation, but rotational twin domains are present. The out-of-plane epitaxial relationship is determined to be Ge{sub 2}Sb{sub 2}Te{sub 5}(0001) || BaF{sub 2}(111), whereas the in-plane relationship is characterized by two directions, i.e., Ge{sub 2}Sb{sub 2}Te{sub 5} [-12-10] || BaF{sub 2}[1-10] and Ge{sub 2}Sb{sub 2}Te{sub 5}[1-210] || BaF{sub 2}[1-10]. Aberration-corrected high-resolution scanning transmission electron microscopy was used to resolve the local atomic structure and confirm the hexagonal structure of the films.

Electrical characterization of the temperature dependence in CdTe/CdS heterojunctions deposited in-situ by pulsed laser deposition

Science.gov (United States)

Avila-Avendano, Jesus; Quevedo-Lopez, Manuel; Young, Chadwin

2018-02-01

The I-V and C-V characteristics of CdTe/CdS heterojunctions deposited in-situ by Pulsed Laser Deposition (PLD) were evaluated. In-situ deposition enables the study of the CdTe/CdS interface by avoiding potential impurities at the surface and interface as a consequence of exposure to air. The I-V and C-V characteristics of the resulting junctions were obtained at different temperatures, ranging from room temperature to 150 °C, where the saturation current (from 10-8 to 10-4 A/cm2), ideality factor (between 1 and 2), series resistance (from 102 to 105 Ω), built-in potential (0.66-0.7 V), rectification factor (˜106), and carrier concentration (˜1016 cm-3) were obtained. The current-voltage temperature dependence study indicates that thermionic emission is the main transport mechanism at the CdTe/CdS interface. This study also demonstrated that the built-in potential (Vbi) calculated using a thermionic emission model is more accurate than that calculated using C-V extrapolation since C-V plots showed a Vbi shift as a function of frequency. Although CdTe/CdS is widely used for photovoltaic applications, the parameters evaluated in this work indicate that CdTe/CdS heterojunctions could be used as rectifying diodes and junction field effect transistors (JFETs). JFETs require a low PN diode saturation current, as demonstrated for the CdTe/CdS junction studied here.

Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Alaa Ayad Al-mebir

2016-01-01

Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

Region specific optimization of continuous linear attenuation coefficients based on UTE (RESOLUTE)

DEFF Research Database (Denmark)

Ladefoged, Claes N; Benoit, Didier; Law, Ian

2015-01-01

The reconstruction of PET brain data in a PET/MR hybrid scanner is challenging in the absence of transmission sources, where MR images are used for MR-based attenuation correction (MR-AC). The main challenge of MR-AC is to separate bone and air, as neither have a signal in traditional MR images......-valued linear attenuation coefficients in bone that provides accurate reconstructed PET image data. A total of 164 [(18)F]FDG PET/MR patients were included in this study, of which 10 were used for training. MR-AC was based on either standard CT (reference), UTE or our method (RESOLUTE). The reconstructed PET...... on the reconstructed PET images, as well as limiting the number and extent of the outliers....

RF Pulsed Heating

Energy Technology Data Exchange (ETDEWEB)

Pritzkau, David P.

2002-01-03

RF pulsed heating is a process by which a metal is heated from magnetic fields on its surface due to high-power pulsed RF. When the thermal stresses induced are larger than the elastic limit, microcracks and surface roughening will occur due to cyclic fatigue. Pulsed heating limits the maximum magnetic field on the surface and through it the maximum achievable accelerating gradient in a normal conducting accelerator structure. An experiment using circularly cylindrical cavities operating in the TE{sub 011} mode at a resonant frequency of 11.424 GHz is designed to study pulsed heating on OFE copper, a material commonly used in normal conducting accelerator structures. The high-power pulsed RF is supplied by an X-band klystron capable of outputting 50 MW, 1.5 {micro}s pulses. The test pieces of the cavity are designed to be removable to allow testing of different materials with different surface preparations. A diagnostic tool is developed to measure the temperature rise in the cavity utilizing the dynamic Q change of the resonant mode due to heating. The diagnostic consists of simultaneously exciting a TE{sub 012} mode to steady-state in the cavity at 18 GHz and measuring the change in reflected power as the cavity is heated from high-power pulsed RF. Two experimental runs were completed. One run was executed at a calculated temperature rise of 120 K for 56 x 10{sup 6} pulses. The second run was executed at a calculated temperature rise of 82 K for 86 x 10{sup 6} pulses. Scanning electron microscope pictures show extensive damage occurring in the region of maximum temperature rise on the surface of the test pieces.

Refractive index modulation of Sb70Te30 phase-change thin films by multiple femtosecond laser pulses

International Nuclear Information System (INIS)

Lei, Kai; Wang, Yang; Jiang, Minghui; Wu, Yiqun

2016-01-01

In this study, the controllable effective refractive index modulation of Sb 70 Te 30 phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

FY 2000 report on the results of the advanced R and D for the UTES (underground thermal energy storage) system; 2000 nendo chichu jiban chikunetsu system gijutsu sendo kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

In this study, study was made of the commercialization of the UTES (underground thermal energy storage) system using the underground heat source heat pump system technology as the base, considering that this is a technology suitable for the urban area where the heat demand intensively increases and a lot of exhaust heat and usable heat exist. By the realization of the UTES system technology, it is expected that the system promotes Japan's utilization of the unused energy and contributes to the construction of the CO2 emission control type society for Japan's energy policy and global warming prevention and secondarily to leveling of power loads and elimination of the heat island phenomenon in large cities. As to the UTES system which is aimed at being used for space heating and cooling and hot water supply in buildings, the following two were studied: the indirect system, BTES (borehole thermal energy storage) system, in which heat is collected/radiated from the ground by the heat exchanger installed underground; the direct system, ATES (aquifer thermal energy storage) system, in which the groundwater stored in aquifer is directly pumped up and used. The study was made in the items written below: 1) establishment of an system image of the UTES system; 2) evaluation study of effects of the introduction, practical applicability, etc. 3) extraction of the subjects for development. As a result, system images of the indirect/direct systems were obtained. (NEDO)

FY 2000 report on the results of the advanced R and D for the UTES (underground thermal energy storage) system; 2000 nendo chichu jiban chikunetsu system gijutsu sendo kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

In this study, study was made of the commercialization of the UTES (underground thermal energy storage) system using the underground heat source heat pump system technology as the base, considering that this is a technology suitable for the urban area where the heat demand intensively increases and a lot of exhaust heat and usable heat exist. By the realization of the UTES system technology, it is expected that the system promotes Japan's utilization of the unused energy and contributes to the construction of the CO2 emission control type society for Japan's energy policy and global warming prevention and secondarily to leveling of power loads and elimination of the heat island phenomenon in large cities. As to the UTES system which is aimed at being used for space heating and cooling and hot water supply in buildings, the following two were studied: the indirect system, BTES (borehole thermal energy storage) system, in which heat is collected/radiated from the ground by the heat exchanger installed underground; the direct system, ATES (aquifer thermal energy storage) system, in which the groundwater stored in aquifer is directly pumped up and used. The study was made in the items written below: 1) establishment of an system image of the UTES system; 2) evaluation study of effects of the introduction, practical applicability, etc. 3) extraction of the subjects for development. As a result, system images of the indirect/direct systems were obtained. (NEDO)

Imaging of the Achilles tendon in spondyloarthritis: a comparison of ultrasound and conventional, short and ultrashort echo time MRI with and without intravenous contrast

International Nuclear Information System (INIS)

Hodgson, R.J.; Emery, P.; Grainger, A.J.; O'Connor, P.J.; Evans, R.; Coates, L.; Marzo-Ortega, H.; Helliwell, P.; McGonagle, D.; Robson, M.D.

2011-01-01

To compare conventional MRI, ultrashort echo time MRI and ultrasound for assessing the extent of tendon abnormalities in spondyloarthritis. 25 patients with spondyloarthritis and Achilles symptoms were studied with MRI and ultrasound. MR images of the Achilles tendon were acquired using T1-weighted spin echo, gradient echo and ultrashort echo time (UTE) sequences with echo times (TE) between 0.07 and 16 ms, before and after intravenous contrast medium. Greyscale and power Doppler ultrasound were also performed. The craniocaudal extent of imaging abnormalities measured by a consultant musculoskeletal radiologist was compared between the different techniques. Abnormalities were most extensive on spoiled gradient echo images with TE=2 ms. Contrast enhancement after intravenous gadolinium was greatest on the UTE images (TE=0.07 ms). Fewer abnormalities were demonstrated using unenhanced UTE. Abnormalities were more extensive on MRI than ultrasound. Contrast enhancement was more extensive than power Doppler signal. 3D spoiled gradient echo images with an echo time of 2 ms demonstrate more extensive tendon abnormalities than the other techniques in spondyloarthritis. Abnormalities of vascularity are best demonstrated on enhanced ultrashort echo time images. (orig.)

Preparation and characterization of pulsed laser deposited CdTe thin films at higher FTO substrate temperature and in Ar + O{sub 2} atmosphere

Energy Technology Data Exchange (ETDEWEB)

Ding, Chao; Ming, Zhenxun [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Li, Bing, E-mail: libing70@126.com [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Feng, Lianghuan [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Wu, Judy [Department of Physics and Astronomy, Kansas University, Lawrence 66045 (United States)

2013-06-20

Highlights: • CdTe films were deposited by PLD at high substrate temperatures (400 °C, 550 °C). • CdTe films were achieved under the atmosphere (1.2 Torr) of Ar mixed with O{sub 2}. • Deposited CdTe films were cubic phase and had strong (1 0 0) preferred orientation. • Scanning electron microscope (SEM) showed an average grain size of 0.3–0.6 μm. • The ultra-thin film (CdS/PLD-CdTe) solar cell with efficiency of 6.68% was made. -- Abstract: Pulsed laser deposition (PLD) is one of the promising techniques for depositing cadmium telluride (CdTe) thin films. It has been reported that PLD CdTe thin films were almost deposited at the lower substrate temperatures (<300 °C) under vacuum conditions. However, the poor crystallinity of CdTe films prepared in this way renders them not conducive to the preparation of high-efficiency CdTe solar cells. To obtain high-efficiency solar cell devices, better crystallinity and more suitable grain size are needed, which requires the CdTe layer to be deposited by PLD at high substrate temperatures (>400 °C). In this paper, CdTe layers were deposited by PLD (KrF, λ = 248 nm, 10 Hz) at different higher substrate temperatures (T{sub s}). Excellent performance of CdTe films was achieved at higher substrate temperatures (400 °C, 550 °C) under an atmosphere of Ar mixed with O{sub 2} (1.2 Torr). X-ray diffraction analysis confirmed the formation of CdTe cubic phase with a strong (1 0 0) preferential orientation at all substrates temperatures on 60 mJ laser energy. The optical properties of CdTe were investigated, and the band gaps of CdTe films were 1.51 eV and 1.49 eV at substrate temperatures of 400 °C and 550 °C, respectively. Scanning electron microscopy (SEM) showed an average grain size of 0.3–0.6 μm. Thus, under these conditions of the atmosphere of Ar + O{sub 2} (15 Torr) and at the relatively high T{sub s} (500 °C), an thin-film (FTO/PLD-CdS (100 nm)/PLD-CdTe (∼1.5 μm)/HgTe: Cu/Ag) solar cell with an

Experimental study of pulsed heating of electromagnetic cavities

International Nuclear Information System (INIS)

Pritzkau, D.P.; Menegat, A.; Siemann, R.H.

1997-01-01

An experiment to study the effects of pulsed heating in electromagnetic cavities will be performed. Pulsed heating is believed to be the limiting mechanism of high acceleration gradients at short wavelengths. A cylindrical cavity operated in the TE 011 mode at a frequency of 11.424 GHz will be used. A klystron will be used to supply a peak input power of 20 MW with a pulse length of 1.5 μs. The temperature response of the cavity will be measured by a second waveguide designed to excite a TE 012 mode in the cavity with a low-power CW signal at a frequency of 17.8 GHz. The relevant theory of pulsed heating will be discussed and the results from cold-testing the structure will be presented

High power pulse electron beam modification and ion implantation of Hg{sub 1-x}Cd{sub x}Te crystals

Energy Technology Data Exchange (ETDEWEB)

Vojtsekhovskij, A V; Remnev, G E [Tomsk Polytechnic Univ. (Russian Federation). Nuclear Physics Inst.; Opekunov, M S; Kokhanenko, A P; Korotaev, A G; Denisov, Yu A; Oucherenko, D A [Tomsk State Univ. (Russian Federation). Dept. of Radiophysics

1997-12-31

Hg{sub 1-x}Cd{sub x}Te (MCT) samples (x = 0.21 - 0.22) were irradiated by pulse electron beams at doses of 10{sup 13} to 10{sup 17} cm{sup -2}. The electron beams possessed the following parameters: 500 keV electron energy (30-40 A/cm{sup 2} electron current density, 60-80 ns current pulse); 200 keV electron energy (8- 10 A/cm{sup 2} electron current density, 100-200 ns current pulse). The electric conductivity and recombination of modified samples were investigated by the Hall effect and photoconductivity methods. For the 200 keV electron energy beam irradiation, the n-type surface regions were obtained under threshold mechanisms of donor defect generation. For the 500 keV electron energy beam irradiation, the maximum value of charge carrier lifetimes occur in the p- to n-type conductivity conversion range for the initial p-type crystals due to the conductivity compensation. MCT samples (x = 0.21 - 0.22) were implanted with Al ions at doses of 10{sup 12}-10{sup 16} cm{sup -2}. The ion beams possessed the following parameters: (1-10) A/cm{sup 2} ion current density, (100-200) ns current pulse; (150-450) keV Al ion (Al{sup +},Al{sup ++}, Al{sup +++}). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. Comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrates differences in ion distribution, doping profiles and defect formation radiation mechanisms. (author). 3 figs., 8 refs.

3D Cones Acquisition of Human Extremity Imaging Using a 1.5T Superconducting Magnet and an Unshielded Gradient Coil Set.

Science.gov (United States)

Setoi, Ayana; Kose, Katsumi

2018-05-16

We developed ultrashort echo-time (UTE) imaging sequences with 3D Cones trajectories for a home-built compact MRI system using a 1.5T superconducting magnet and an unshielded gradient coil set. We achieved less than 7 min imaging time and obtained clear in vivo images of a human forearm with a TE of 0.4 ms. We concluded that UTE imaging using 3D Cones acquisition was successfully implemented in our 1.5T MRI system.

Influence of the additive Ag for crystallization of amorphous Ge-Sb-Te thin films

Energy Technology Data Exchange (ETDEWEB)

Song, Ki-Ho; Kim, Sung-Won; Seo, Jae-Hee [Faculty of Applied Chemical Engineering, Chonnam National University, 300 Yongbong-dong, Kwangju 500-757 (Korea, Republic of); Lee, Hyun-Yong, E-mail: hyleee@chonnam.ac.k [Faculty of Applied Chemical Engineering, Chonnam National University, 300 Yongbong-dong, Kwangju 500-757 (Korea, Republic of)

2009-05-29

We have investigated the optical and amorphous-to-crystalline transition properties in four-types of chalcogenide thin films; Ge{sub 2}Sb{sub 2}Te{sub 5}, Ge{sub 8}Sb{sub 2}Te{sub 11}, Ag-Ge{sub 2}Sb{sub 2}Te{sub 5} and Ag-Ge{sub 8}Sb{sub 2}Te{sub 11}. Crystallization was caused by nano-pulse illumination ({lambda} = 658 nm) with power (P) of 1-17 mW and pulse duration (t) of 10-460 ns, and the morphologies of crystallized spots were observed by SEM and microscope. It was found that the crystallized spot nearby linearly increases in size with increasing the illuminating energy (E = P {center_dot} t) and eventually ablated out by over illumination. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-vis-IR spectrophotometer. In addition, a speed of amorphous-to-crystalline transition was evaluated by detecting the reflection response signals for the nano-pulse scanning. Conclusively, the Ge{sub 8}Sb{sub 2}Te{sub 11} film has a faster crystallization speed than the Ge{sub 2}Sb{sub 2}Te{sub 5} film despite its higher crystallization temperature. The crystallization speed was largely improved by adding Ag in Ge{sub 2}Sb{sub 2}Te{sub 5} film but not in Ge{sub 8}Sb{sub 2}Te{sub 11} film. To explain these results, we considered a heat confinement by electron hopping.

Morphological analysis of GeTe in inline phase change switches

Energy Technology Data Exchange (ETDEWEB)

King, Matthew R., E-mail: matthew.king2@ngc.com [Northrop Grumman Electronic Systems, Advanced Concepts and Technologies Division, 1212 Winterson Rd., Linthicum, Maryland 21090 (United States); Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); El-Hinnawy, Nabil [Northrop Grumman Electronic Systems, Advanced Concepts and Technologies Division, 1212 Winterson Rd., Linthicum, Maryland 21090 (United States); Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Salmon, Mike; Gu, Jitty [Evans Analytical Group, 628 Hutton St., Raleigh, North Carolina 27606 (United States); Wagner, Brian P.; Jones, Evan B.; Howell, Robert S.; Nichols, Doyle T.; Young, Robert M. [Northrop Grumman Electronic Systems, Advanced Concepts and Technologies Division, 1212 Winterson Rd., Linthicum, Maryland 21090 (United States); Borodulin, Pavel [Northrop Grumman Electronic Systems, Advanced Concepts and Technologies Division, 1212 Winterson Rd., Linthicum, Maryland 21090 (United States); Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 (United States)

2015-09-07

Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.

Morphological analysis of GeTe in inline phase change switches

International Nuclear Information System (INIS)

King, Matthew R.; El-Hinnawy, Nabil; Salmon, Mike; Gu, Jitty; Wagner, Brian P.; Jones, Evan B.; Howell, Robert S.; Nichols, Doyle T.; Young, Robert M.; Borodulin, Pavel

2015-01-01

Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented

Refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films by multiple femtosecond laser pulses

Energy Technology Data Exchange (ETDEWEB)

Lei, Kai; Wang, Yang, E-mail: ywang@siom.ac.cn; Jiang, Minghui; Wu, Yiqun [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

2016-05-07

In this study, the controllable effective refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

Second harmonic generation in Te crystal using free electron laser

CERN Document Server

Yamauchi, T; Minehara, E J

2002-01-01

The second harmonic generation signal converted from the fundamental wavelength of 22 mu m of a free electron laser was observed for the first time using a birefringent Te crystal. The experimental conversion efficiency of Te crystal for second harmonic generation is 0.53%, which is equivalent to the theoretical value within a factor of 2. The Te crystal has been incorporated into an autocorrelator system to measure the micro-pulse width of infrared free electron laser successfully. (author)

Phase diagrams of ZnTe-HgTe-Te and ZnTe-CdTe-HgTe-Te systems

International Nuclear Information System (INIS)

Andrukhiv, A.M.; Litvak, A.M.; Mironov, K.E.

1992-01-01

ZnTe-HgTe-Te system liquidus surface is investigated and solid solution layers are produced in this system by the method of liquid-phase epitaxy (LPE). The theoretical analysis of experimental and theoretical data allows to calculate the diagram of ZnTe-CdTe-HgTe-Te system fusibility. A significant effect of elastic stresses of the epitaxial layer, grown on CdTe substrate, on the process of LPE of solid solutions is established

Fluctuations in induced charge introduced by Te inclusions within CdZnTe radiation detectors

International Nuclear Information System (INIS)

Bale, Derek S.

2010-01-01

Recently, homogenization theory based on a multiple-scale perturbation of the electron transport equation has been used to derive a mathematical framework for modeling the excess charge lost to Te inclusions within radiation detectors based on semi-insulating cadmium zinc telluride (CdZnTe). In that theory, the heterogeneous material is mathematically replaced by a homogenized CdZnTe crystal whose effective electron attenuation length incorporates the additional uniform electron trapping caused by the inclusions. In this paper, the homogenization theory is extended to incorporate fluctuations in the induced charge (i.e., charge collection nonuniformities) introduced by the random position and size distributions of a noncorrelated population of small (i.e, <20 μm) Te inclusions. Analysis of the effective parameters derived within the homogenized framework is used to develop a probability distribution of effective electron attenuation lengths, and therefore effective mobility-lifetime products, as a function of both the position and size distribution of Te inclusions. Example distributions are detailed for the case of an exponential size distribution at various number densities. Further, it is demonstrated that the inclusion-induced material nonuniformities derived in this paper can be numerically sampled efficiently, making them applicable to Monte Carlo device simulation of realistic CdZnTe detectors. Simulated charge induction maps and pulse-height spectra are presented and compared to recently published measurements.

Study of the fast inversion recovery pulse sequence. With reference to fast fluid attenuated inversion recovery and fast short TI inversion recovery pulse sequence

International Nuclear Information System (INIS)

Tsuchihashi, Toshio; Maki, Toshio; Suzuki, Takeshi

1997-01-01

The fast inversion recovery (fast IR) pulse sequence was evaluated. We compared the fast fluid attenuated inversion recovery (fast FLAIR) pulse sequence in which inversion time (TI) was established as equal to the water null point for the purpose of the water-suppressed T 2 -weighted image, with the fast short TI inversion recovery (fast STIR) pulse sequence in which TI was established as equal to the fat null point for purpose of fat suppression. In the fast FLAIR pulse sequence, the water null point was increased by making TR longer. In the FLAIR pulse sequence, the longitudinal magnetization contrast is determined by TI. If TI is increased, T 2 -weighted contrast improves in the same way as increasing TR for the SE pulse sequence. Therefore, images should be taken with long TR and long TI, which are longer than TR and longer than the water null point. On the other hand, the fat null point is not affected by TR in the fast STIR pulse sequence. However, effective TE was affected by variation of the null point. This increased in proportion to the increase in effective TE. Our evaluation indicated that the fast STIR pulse sequence can control the extensive signals from fat in a short time. (author)

Controllable SET process in O-Ti-Sb-Te based phase change memory for synaptic application

Science.gov (United States)

Ren, Kun; Li, Ruiheng; Chen, Xin; Wang, Yong; Shen, Jiabin; Xia, Mengjiao; Lv, Shilong; Ji, Zhenguo; Song, Zhitang

2018-02-01

The nonlinear resistance change and small bit resolution of phase change memory (PCM) under identical operation pulses will limit its performance as a synaptic device. The octahedral Ti-Te units in Ti-Sb-Te, regarded as nucleation seeds, are degenerated when Ti is bonded with O, causing a slower crystallization and a controllable SET process in PCM cells. A linear resistance change under identical pulses, a resolution of ˜8 bits, and an ON/OFF ratio of ˜102 has been achieved in O-Ti-Sb-Te based PCM, showing its potential application as a synaptic device to improve recognition performance of the neural network.

Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch

International Nuclear Information System (INIS)

Young, Robert M.; El-Hinnawy, Nabil; Borodulin, Pavel; Wagner, Brian P.; King, Matthew R.; Jones, Evan B.; Howell, Robert S.; Lee, Michael J.

2014-01-01

We show the finite element simulation of the melt/quench process in a phase change material (GeTe, germanium telluride) used for a radio frequency switch. The device is thermally activated by an independent NiCrSi (nickel chrome silicon) thin film heating element beneath a dielectric separating it electrically from the phase change layer. A comparison is made between the predicted and experimental minimum power to amorphize (MPA) for various thermal pulse powers and pulse time lengths. By including both the specific heat and latent heat of fusion for GeTe, we find that the MPA and the minimum power to crystallize follow the form of a hyperbola on the power time effect plot. We also find that the simulated time at which the entire center GeTe layer achieves melting accurately matches the MPA curve for pulse durations ranging from 75–1500 ns and pulse powers from 1.6–4 W

Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch

Energy Technology Data Exchange (ETDEWEB)

Young, Robert M., E-mail: rm.young@ngc.com; El-Hinnawy, Nabil; Borodulin, Pavel; Wagner, Brian P.; King, Matthew R.; Jones, Evan B.; Howell, Robert S.; Lee, Michael J. [Northrop Grumman Corp., Electronic Systems, P.O. Box 1521, Baltimore, Maryland 21203 (United States)

2014-08-07

We show the finite element simulation of the melt/quench process in a phase change material (GeTe, germanium telluride) used for a radio frequency switch. The device is thermally activated by an independent NiCrSi (nickel chrome silicon) thin film heating element beneath a dielectric separating it electrically from the phase change layer. A comparison is made between the predicted and experimental minimum power to amorphize (MPA) for various thermal pulse powers and pulse time lengths. By including both the specific heat and latent heat of fusion for GeTe, we find that the MPA and the minimum power to crystallize follow the form of a hyperbola on the power time effect plot. We also find that the simulated time at which the entire center GeTe layer achieves melting accurately matches the MPA curve for pulse durations ranging from 75–1500 ns and pulse powers from 1.6–4 W.

Characterization of paraffin based breast tissue equivalent phantom using a CdTe detector pulse height analysis.

Science.gov (United States)

Cubukcu, Solen; Yücel, Haluk

2016-12-01

In this study, paraffin was selected as a base material and mixed with different amounts of CaSO 4 ·2H 2 O and H 3 BO 3 compounds in order to mimic breast tissue. Slab phantoms were produced with suitable mixture ratios of the additives in the melted paraffin. Subsequently, these were characterized in terms of first half-value layer (HVL) in the mammographic X-ray range using a pulse-height spectroscopic analysis with a CdTe detector. Irradiations were performed in the energy range of 23-35 kV p under broad beam conditions from Mo/Mo and Mo/Rh target/filter combinations. X-ray spectra were acquired with a CdTe detector without and with phantom material interposition in increments of 1 cm thickness and then evaluated to obtain the transmission data. The net integral areas of the spectra for the slabs were used to plot the transmission curves and these curves were fitted to the Archer model function. The results obtained for the slabs were compared with those of standard mammographic phantoms such as CIRS BR series phantoms and polymethylmethacrylate plates (PMMA). From the evaluated transmission curves, the mass attenuation coefficients and HVLs of some mixtures are close to those of the commercially available standard mammography phantoms. Results indicated that when a suitable proportion of H 3 BO 3 and CaSO 4 ·2H 2 O is added to the paraffin, the resulting material may be a good candidate for a breast tissue equivalent phantom.

HIGH SPATIAL-RESOLUTION IMAGING OF TE INCLUSIONS IN CZT MATERIAL

International Nuclear Information System (INIS)

CAMARDA, G.S.; BOLOTNIKOV, A.E.; CARINI, G.A.; CUI, Y.; KOHMAN, K.T.; LI, L.; JAMES, R.B.

2006-01-01

We present new results from our studies of defects in current single-crystal CdZnTe material. Our previous measurements, carried out on thin (∼1 mm) and long (>12 mm) CZT detectors, indicated that small (1-20 (micro)m) Te inclusions can significantly degrade the device's energy resolution and detection efficiency. We are conducting detailed studies of the effects of Te inclusions by employing different characterization techniques with better spatial resolution, such as quantitative fluorescence mapping, X-ray micro-diffraction, and TEM. Also, IR microscopy and gamma-mapping with pulse-shape analysis with higher spatial resolution generated more accurate results in the areas surrounding the micro-defects (Te inclusions). Our results reveal how the performance of CdZnTe detectors is influenced by Te inclusions, such as their spatial distribution, concentration, and size. We also discuss a model of charge transport through areas populated with Te inclusions

Effect of adding Cr on magnetic properties and metallic behavior in MnTe film

International Nuclear Information System (INIS)

Wang, Z.H.; Geng, D.Y.; Gong, W.J.; Li, J.; Li, Y.B.; Zhang, Z.D.

2012-01-01

Mn 1−x Cr x Te films with x = 0, 0.02, and 0.05 was synthesized by pulsed laser deposition and crystallize in hexagonal NiAs-type structure. The spin glass behavior predicted before by Monte Carlo calculation is observed in the MnTe film. This behavior is destroyed by adding Cr in the MnTe film. The temperature dependence of magnetization shows a sharp rise at around 66 K, due to the magneto-elastic coupling. Metallic behavior is observed in the MnTe film in the temperature range 120–220 K, which is ascribed to the magnetic ordering. The metallic behavior disappears with adding Cr, because adding Cr ions destroys the magnetic ordering which is mediated by the sp–d exchange interaction between the Cr ions. - Highlights: ► Mn 1−x Cr x Te films with NiAs-type structure was prepared by pulsed laser deposition. ► The spin glass behavior was observed in MnTe film at low temperature. ► The spin glass behavior was destroyed by adding Cr. ► The temperature dependence of magnetization showed a sharp rise at around 66 K. ► Metallic behavior was observed in MnTe film, which disappeared by adding Cr.

High-Power Plasma Switch for 11.4 GHz Microwave Pulse Compressor

International Nuclear Information System (INIS)

Hirshfield, Jay L.

2010-01-01

Results obtained in several experiments on active RF pulse compression at X-band using a magnicon as the high-power RF source are presented. In these experiments, microwave energy was stored in high-Q TE01 and TE02 modes of two parallel-fed resonators, and then discharged using switches activated with rapidly fired plasma discharge tubes. Designs and high-power tests of several versions of the compressor are described. In these experiments, coherent pulse superposition was demonstrated at a 5-9 MW level of incident power. The compressed pulses observed had powers of 50-70 MW and durations of 40-70 ns. Peak power gains were measured to be in the range of 7:1-11:1 with efficiency in the range of 50-63%.

Multicomponent Seismic Analysis and Calibration to Improve Recovery from Algal Mounds: Application to the Roadrunner/Towaoc area of the Paradox Basin, UTE Mountain UTE Reservation, Colorado

International Nuclear Information System (INIS)

Joe Hachey

2007-01-01

The goals of this project were: (1) To enhance recovery of oil contained within algal mounds on the Ute Mountain Ute tribal lands. (2) To promote the use of advanced technology and expand the technical capability of the Native American Oil production corporations by direct assistance in the current project and dissemination of technology to other Tribes. (3) To develop an understanding of multicomponent seismic data as it relates to the variations in permeability and porosity of algal mounds, as well as lateral facies variations, for use in both reservoir development and exploration. (4) To identify any undiscovered algal mounds for field-extension within the area of seismic coverage. (5) To evaluate the potential for applying CO 2 floods, steam floods, water floods or other secondary or tertiary recovery processes to increase production. The technical work scope was carried out by: (1) Acquiring multicomponent seismic data over the project area; (2) Processing and reprocessing the multicomponent data to extract as much geological and engineering data as possible within the budget and time-frame of the project; (3) Preparing maps and data volumes of geological and engineering data based on the multicomponent seismic and well data; (4) Selecting drilling targets if warranted by the seismic interpretation; (5) Constructing a static reservoir model of the project area; and (6) Constructing a dynamic history-matched simulation model from the static model. The original project scope covered a 6 mi 2 (15.6 km 2 ) area encompassing two algal mound fields (Towaoc and Roadrunner). 3D3C seismic data was to acquired over this area to delineate mound complexes and image internal reservoir properties such as porosity and fluid saturations. After the project began, the Red Willow Production Company, a project partner and fully-owned company of the Southern Ute Tribe, contributed additional money to upgrade the survey to a nine-component (3D9C) survey. The purpose of this upgrade

Multicomponent Seismic Analysis and Calibration to Improve Recovery from Algal Mounds: Application to the Roadrunner/Towaoc area of the Paradox Basin, UTE Mountain UTE Reservation, Colorado

Energy Technology Data Exchange (ETDEWEB)

Joe Hachey

2007-09-30

The goals of this project were: (1) To enhance recovery of oil contained within algal mounds on the Ute Mountain Ute tribal lands. (2) To promote the use of advanced technology and expand the technical capability of the Native American Oil production corporations by direct assistance in the current project and dissemination of technology to other Tribes. (3) To develop an understanding of multicomponent seismic data as it relates to the variations in permeability and porosity of algal mounds, as well as lateral facies variations, for use in both reservoir development and exploration. (4) To identify any undiscovered algal mounds for field-extension within the area of seismic coverage. (5) To evaluate the potential for applying CO{sub 2} floods, steam floods, water floods or other secondary or tertiary recovery processes to increase production. The technical work scope was carried out by: (1) Acquiring multicomponent seismic data over the project area; (2) Processing and reprocessing the multicomponent data to extract as much geological and engineering data as possible within the budget and time-frame of the project; (3) Preparing maps and data volumes of geological and engineering data based on the multicomponent seismic and well data; (4) Selecting drilling targets if warranted by the seismic interpretation; (5) Constructing a static reservoir model of the project area; and (6) Constructing a dynamic history-matched simulation model from the static model. The original project scope covered a 6 mi{sup 2} (15.6 km{sup 2}) area encompassing two algal mound fields (Towaoc and Roadrunner). 3D3C seismic data was to acquired over this area to delineate mound complexes and image internal reservoir properties such as porosity and fluid saturations. After the project began, the Red Willow Production Company, a project partner and fully-owned company of the Southern Ute Tribe, contributed additional money to upgrade the survey to a nine-component (3D9C) survey. The purpose

Minimization of Dead-Periods in MRI Pulse Sequences for Imaging Oblique Planes

Science.gov (United States)

Atalar, Ergin; McVeigh, Elliot R.

2007-01-01

With the advent of breath-hold MR cardiac imaging techniques, the minimization of TR and TE for oblique planes has become a critical issue. The slew rates and maximum currents of gradient amplifiers limit the minimum possible TR and TE by adding dead-periods to the pulse sequences. We propose a method of designing gradient waveforms that will be applied to the amplifiers instead of the slice, readout, and phase encoding waveforms. Because this method ensures that the gradient amplifiers will always switch at their maximum slew rate, it results in the minimum possible dead-period for given imaging parameters and scan plane position. A GRASS pulse sequence has been designed and ultra-short TR and TE values have been obtained with standard gradient amplifiers and coils. For some oblique slices, we have achieved shorter TR and TE values than those for nonoblique slices. PMID:7869900

Ultrafast optical manipulation of atomic motion in multilayer Ge-Sb-Te phase change materials

Directory of Open Access Journals (Sweden)

Fons P.

2013-03-01

Full Text Available Phase change random access memory devices have evolved dramatically with the recent development of superlattice structure of Ge-Sb-Te material (GST-SL in terms of its low power consumption. The phase change in GST-SL is mainly characterized by the displacement of Ge atoms. Here we examine a new phase change method, that is the manipulation of Ge-Te bonds using linearly-polarized femtosecond near-infrared optical pulses. As a result, we found that the p-polarized pump pulse is more effective in inducing the reversible and irreversible displacement of Ge atoms along [111] direction in the local structure. This structural change would be induced by the anisotropic carrier-phonon interaction along the [111] direction created by the p-polarized pulse.

Hybrid Pulsed Nd:YAG Laser

Science.gov (United States)

Miller, Sawyer; Trujillo, Skyler; Fort Lewis College Laser Group Team

This work concerns the novel design of an inexpensive pulsed Nd:YAG laser, consisting of a hybrid Kerr Mode Lock (KLM) and Q-switch pulse. The two pulse generation systems work independently, non simultaneously of each other, thus generating the ability for the user to easily switch between ultra-short pulse widths or large energy density pulses. Traditionally, SF57 glass has been used as the Kerr medium. In this work, novel Kerr mode-locking mediums are being investigated including: tellurite compound glass (TeO2), carbon disulfide (CS2), and chalcogenide glass. These materials have a nonlinear index of refraction orders of magnitude,(n2), larger than SF57 glass. The Q-switched pulse will utilize a Pockels cell. As the two pulse generation systems cannot be operated simultaneously, the Pockels cell and Kerr medium are attached to kinematic mounts, allowing for quick interchange between systems. Pulse widths and repetition rates will vary between the two systems. A goal of 100 picosecond pulse widths are desired for the mode-locked system. A goal of 10 nanosecond pulse widths are desired for the Q-switch system, with a desired repetition rate of 50 Hz. As designed, the laser will be useful in imaging applications.

Pulsed laser deposition of II-VI and III-V semiconductor materials

Energy Technology Data Exchange (ETDEWEB)

Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica

1998-12-01

Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

Few-cycle Optical Parametric Chirped Pulse Amplification

Science.gov (United States)

2007-01-08

silicon - 150mm suprasi1300 Figure 10. Stretcher-compressor unit: group delay 5 -45mm TeO2 (ordinary) (GD) of 30mm silicon, 150mm suprasil300, 45mm CL 0...cycle pulse characterization: 840 -Measured raw 2DSI 20 °OA- traces for pulse (a) before 02. -and (b) after dispersion D 0 by glass plate; (c) so...fused silica plateJ19] see Fig. 15(a), along with the extracted spectral group delays. The chirp introduced by the glass plate is reflected in the

High-power and long-pulse operation of TE{sub 31,11} mode gyrotron

Energy Technology Data Exchange (ETDEWEB)

Ikeda, Ryosuke, E-mail: ikeda.ryosuke@jaea.go.jp; Kajiwara, Ken; Oda, Yasuhisa; Takahashi, Koji; Sakamoto, Keishi

2015-10-15

Highlights: • We are under development of TE{sub 31,11} mode gyrotron to aim ITER specification. • HE{sub 11} mode purity reached 96% of ITER specification. • Mode competition was suppressed in initial phase of oscillation by anode voltage control. • Maximum output power of 1.2 MW was achieved. • Steady state operation of 500 MJ was achieved. - Abstract: The ITER electron cyclotron system is designed to inject a 20 MW RF beam by using twenty-four 170 GHz/1 MW gyrotrons. JAEA is currently developing a gyrotron having a high-order mode (TE{sub 31,11}) to reduce the heat load in the cavity resonator and achieve an output power greater than 1 MW. The measured radiation profile at the front of the diamond window agreed with the results of the calculation. In order to suppress RF loss in the equatorial and upper port launchers, a high-quality HE{sub 11} mode is required at the exit of the matching optics unit (MOU). An HE{sub 11} mode purity of 96% was achieved by finely adjusting the two mirrors in the MOU. During the oscillation start-up phase, mode competition with counter-rotating TE{sub 29,12} mode was observed on the higher magnetic field side which caused arcing and pressure increase in the gyrotron. To avoid the counter-rotating TE{sub 29,12} mode from being excited, a start-up scenario that controls the voltage between the anode and cathode electrodes at the initial phase of operation was introduced, which was able to achieve a stable start-up of TE{sub 31,11} mode. A 1.2 MW output power having a total electric efficiency of 43% was obtained in high-power experiments. In steady-state operation, a 1000 s oscillation length and output power of 0.51 MW was achieved.

Upgrade of the SLAC SLED II Pulse Compression System Based on Recent High Power Tests

International Nuclear Information System (INIS)

Vlieks, A.E.; Fowkes, W.R.; Loewen, R.J.; Tantawi, S.G.

2011-01-01

In the Next Linear Collider (NLC) it is expected that the high power rf components be able to handle peak power levels in excess of 400 MW. We present recent results of high power tests designed to investigate the RF breakdown limits of the X-band pulse compression system used at SLAC. (SLED-II). Results of these tests show that both the TE 01 -TE 10 mode converter and the 4-port hybrid have a maximum useful power limit of 220-250 MW. Based on these tests, modifications of these components have been undertaken to improve their peak field handling capability. Results of these modifications will be presented. As part of an international effort to develop a new 0.5-1.5 TeV electron-positron linear collider for the 21st century, SLAC has been working towards a design, referred to as 'The Next Linear Collider' (NLC), which will operate at 11.424 GHz and utilize 50-75 MW klystrons as rf power sources. One of the major challenges in this design, or any other design, is how to generate and efficiently transport extremely high rf power from a source to an accelerator structure. SLAC has been investigating various methods of 'pulse compressing' a relatively wide rf pulse ((ge) 1 μs) from a klystron into a narrower, but more intense, pulse. Currently a SLED-II pulse compression scheme is being used at SLAC in the NLC Test Accelerator (NLCTA) and in the Accelerator Structures Test Area (ASTA) to provide high rf power for accelerator and component testing. In ASTA, a 1.05 μs pulse from a 50 MW klystron was successfully pulse compressed to 205 MW with a pulse width of 150 ns. Since operation in NLC will require generating and transporting rf power in excess of 400 MW it was decided to test the breakdown limits of the SLED-II rf components in ASTA with rf power up to the maximum available of 400 MW. This required the combining of power from two 50 MW klystrons and feeding the summed power into the SLED-II pulse compressor. Results from this experiment demonstrated that two of

ADVANCED READOUT ELECTRONICS FOR MULTIELEMENT CdZnTe SENSORS

International Nuclear Information System (INIS)

DE GERONIMO, G.; O CONNOR, P.; KANDASAMY, A.; GROSHOLZ, J.

2002-01-01

A generation of high performance front-end and read-out ASICs customized for highly segmented CdZnTe sensors is presented. The ASICs, developed in a multi-year effort at Brookhaven National Laboratory, are targeted to a wide range of applications including medical, safeguards/security, industrial, research, and spectroscopy. The front-end multichannel ASICs provide high accuracy low noise preamplification and filtering of signals, with versions for small and large area CdZnTe elements. They implement a high order unipolar or bipolar shaper, an innovative low noise continuous reset system with self-adapting capability to the wide range of detector leakage currents, a new system for stabilizing the output baseline and high output driving capability. The general-purpose versions include programmable gain and peaking time. The read-out multichannel ASICs provide fully data driven high accuracy amplitude and time measurements, multiplexing and time domain derandomization of the shaped pulses. They implement a fast arbitration scheme and an array of innovative two-phase offset-free rail-to-rail analog peak detectors for buffering and absorption of input rate fluctuations, thus greatly relaxing the rate requirement on the external ADC. Pulse amplitude, hit timing, pulse risetime, and channel address per processed pulse are available at the output in correspondence of an external readout request. Prototype chips have been fabricated in 0.5 and 0.35 (micro)m CMOS and tested. Design concepts and experimental results are discussed

MR imaging pulse sequence rationale: SD-, T1-, and T2-weighted images

International Nuclear Information System (INIS)

Sax, S.; Weathers, S.W.; Schneiders, N.J.; Horowitz, B.L.; Mawad, M.E.; Sandlin, M.E.; Blackwell, R.; Bryan, R.N.

1986-01-01

Over 500 patients have been examined with a pulse sequence designed to provide spin-density (SD)-weighted images (TR=3 sec, TE=35 msec), T1-weighted images (TR=0.3 sec, TE=35msec), and T2-weighted images (TR=3 sec, TE=105 msec) from which calculated ''synthesized'' images and SD, T1, and T2 calculated images could be obtained. Each image contributes unique information. SD-weighted images optimally display anatomy and often best highlight pathology. T1-weighted images are critical in assessing cerebral hemorrhages. T2-weighted images best display most lesions, but yield incomplete information in 35% of cases. All three types of ''weighted'' images are necessary to optimally display anatomy and fully characterize a lesion. Computerized calculations and simulations suggest that no other combination of pulse sequences yields equal information for a given examination time

Electrodeposition of textured Bi27Sb28Te45 nanowires with enhanced electrical conductivity

International Nuclear Information System (INIS)

Hasan, Maksudul; Gautam, Devendraprakash; Enright, Ryan

2016-01-01

This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi 1-x Sb x ) 2 Te 3 nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi 27 Sb 28 Te 45 nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10 4  S m −1 ) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi 1-x Sb x ) 2 Te 3 nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.

A short TE gradient-echo sequence using asymmetric sampling

International Nuclear Information System (INIS)

Fujita, Norihiko; Harada, Kohshi; Sakurai, Kosuke; Nakanishi, Katsuyuki; Kim, Shyogen; Kozuka, Takahiro

1990-01-01

We have developed a gradient-echo pulse sequence with a short TE less than 4 msec using a data set of asymmetric off-center sampling with a broad bandwidth. The use of such a short TE significantly reduces T 2 * dephasing effect even in a two-dimensional mode, and by collecting an off-center echo, motion-induced phase dispersion is also considerably decreased. High immunity of this sequence to these dephasing effects permits clear visualization of anatomical details near the skull base where large local field inhomogeneities and rapid blood flow such as in the internal carotid artery are present. (author)

Reduced field TE01 X-Band traveling wave window

International Nuclear Information System (INIS)

Fowkes, W.R.; Callin, R.S.; Tantawi, S.G.; Wright, E.L.

1995-01-01

The RF electric field is reduced by more than a factor of two using a pair of symmetrically located irises in a new type of klystron window operating in the TE 01 mode at X-Band. The advantages of this window over the usual TE 01 half-wave resonant window are discussed as well as theory and operating results. Ultra high purity alumina formed by the HIP process is used. This window has been successfully tested at 100 MW with a 1.5 microsecond RF pulse width and is being used on the XL series klystrons

MoTe2 saturable absorber for passively Q-switched Ho,Pr:LiLuF4 laser at ∼3 μm

Science.gov (United States)

Yan, Zhengyu; Li, Tao; Zhao, Shengzhi; Yang, Kejian; Li, Dechun; Li, Guiqiu; Zhang, Shuaiyi; Gao, Zijing

2018-03-01

Multilayer molybdenum ditelluride (MoTe2) nanosheets were prepared by liquid-phase exfoliation (LPE) method. A YAG-based MoTe2 saturable absorption (SA) was consequently fabricated. The MoTe2-SA was employed in a passively Q-switched Ho,Pr:LiLuF4 laser at 2.95 μm. Under the absorbed pump power of 3.8 W, an average output power of 90 mW was achieved. The shortest pulse duration of 670 ns was generated with an output power of 73 mW and a repetition rate of 76.46 kHz, corresponding to a pulse energy of 0.95 μJ.

Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip

CERN Document Server

Kalliopuska, J; Penttila, R; Andersson, H; Nenonen, S; Gadda, A; Pohjonen, H; Vanttajac, I; Laaksoc, P; Likonen, J

2011-01-01

We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. Th...

Pulse-height loss in the signal readout circuit of compound semiconductor detectors

Science.gov (United States)

Nakhostin, M.; Hitomi, K.

2018-06-01

Compound semiconductor detectors such as CdTe, CdZnTe, HgI2 and TlBr are known to exhibit large variations in their charge collection times. This paper considers the effect of such variations on the measurement of induced charge pulses by using resistive feedback charge-sensitive preamplifiers. It is shown that, due to the finite decay-time constant of the preamplifiers, the capacitive decay during the signal readout leads to a variable deficit in the measurement of ballistic signals and a digital pulse processing method is employed to correct for it. The method is experimentally examined by using sampled pulses from a TlBr detector coupled to a charge-sensitive preamplifier with 150 μs of decay-time constant and 20 % improvement in the energy resolution of the detector at 662 keV is achieved. The implications of the capacitive decay on the correction of charge-trapping effect by using depth-sensing technique are also considered.

Structure of Se-Te glasses studied using neutron, X-ray diffraction and reverse Monte Carlo modelling

Energy Technology Data Exchange (ETDEWEB)

Itoh, Keiji, E-mail: itoh@okayama-u.ac.jp [Graduate School of Education, Okayama University, Tsushima-naka, Okayama 700-8530 (Japan); Research Reactor Institute, Kyoto University, Kumatori, Osaka 590-0494 (Japan)

2017-02-15

Pulsed neutron diffraction and synchrotron X-ray diffraction measurements were performed on Se{sub 100-x}Te{sub x} bulk glasses with x=10, 20, 30 and 40. The coordination numbers obtained from the diffraction results demonstrate that Se and Te atoms are twofold coordinated and the glass structure is formed by the chain network. The three-dimensional structure model for Se{sub 60}Te{sub 40} glass obtained by using reverse Monte Carlo modelling shows that the alternating arrangements of Se and Te atoms compose the major part of the chain clusters but several other fragments such as Se{sub n} chains and Te-Te dimers are also present in large numbers. The chain clusters have geometrically disordered forms and the interchain atomic order is different from those in the crystal structures of trigonal Se and trigonal Te. - Graphical abstract: Coordination environment in Se{sub 60}Te{sub 40} glass.

Fabrication and photocatalytic activity of high-efficiency visible-light-responsive photocatalyst ZnTe/TiO2 nanotube arrays

International Nuclear Information System (INIS)

Liu Yutang; Zhang Xilin; Liu Ronghua; Yang Renbin; Liu Chengbin; Cai Qingyun

2011-01-01

A new ZnTe modified TiO 2 nanotube (NT) array catalyst was prepared by pulse potential electrodeposition of ZnTe nanoparticles (NPs) onto TiO 2 NT arrays, and its application for photocatalytic degradation of anthracene-9-carboxylic acid (9-AnCOOH) was investigated. The even distribution of ZnTe NPs was well-proportionately grown on the top surface of the TiO 2 NT while without clogging the tube entrances. Compared with the unmodified TiO 2 NT, the ZnTe modified TiO 2 NT (ZnTe/TiO 2 NT) showed significantly enhanced photocatalytic activity towards 9-AnCOOH under simulated solar light. After 70 min of irradiation, 9-AnCOOH was degraded with the removal ratio of 45% on the bare TiO 2 NT, much lower than 80%, 90%, and 100% on the ZnTe/TiO 2 NT with the ZnTe NPs prepared under the pulsed 'on' potentials of -0.8, -1.0, and -2.0 V, respectively. The increased photodegradation efficiency mainly results from the improved photocurrent density as results of enhanced visible-light absorption and decreased hole-electron recombination due to the presence of narrow-band-gap p-type semiconductor ZnTe. -- Graphical abstract: Surface-view SEM images of ZnTe/TiO 2 NT prepared under -2.0 V, and the inset is the corresponding enlarged drawings. Display Omitted Research highlights: → A new method to deposit chalcogenides of transition metals on the TiO 2 nanotubes. → The even distribution of ZnTe nanoparticles was well-proportionedly grown onto TiO 2 NT arrays. → ZnTe/TiO 2 NT showed remarkably increased photocurrent density. → ZnTe/TiO 2 NT showed good photocatalytic performance. → The prepared new catalyst has a promising application in practical systems.

Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

Science.gov (United States)

Huntington, Andrew

2013-01-01

The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

Energy relaxation in IR laser excited Hg1-xCdxTe

International Nuclear Information System (INIS)

Storebo, A K; Brudevoll, T; Olsen, O; Norum, O C; Breivik, M

2009-01-01

IR laser excitation of Hg l-x Cd x Te by low-fluence femtosecond and high fluence microsecond pulses was explored for the technologically important alloy fractions x ∼ 0.2 and x ∼ 0.28. We have used first principles (LAPW) electronic structure calculations and finite element modelling, supported by Monte Carlo simulation for the description of femtosecond pulse carrier relaxation and the transport parameters. Laser wavelengths considered were 6.4 - 10.6 μm for x ∼ 0.2 and 3.8 - 4.8 μm for x ∼ 0.28, with an incident 1 microsecond pulse fluence of 2 J/cm 2 . Many energy transfer mechanisms are invoked due to the long timescales of the microsecond pulses, and a main challenge is therefore to elucidate how these interplay in situations away from thermal equilibrium. Mechanisms studied include one- and two-photon absorption (OPA and TPA) across the band gap, inter-valence band absorption (IVA) between light- and heavy hole bands, electron-hole recombination/impact ionization, band gap renormalisation, intra-band free carrier absorption (FCA), excess carrier temperatures, non-equilibrium phonon generation, and refractive index changes. In the high fluence case, lattice temperatures evolve considerably during the laser pulse in response to the heated carriers. The chosen photon energies lie just above the band gap at the starting lattice temperature of 77 K, and nonlinear effects therefore dominate as the material heats up and the band gap begins to exceed the photon energy. Because of the low photon energy we must rely on Auger recombination, inter-valence band absorption and free carrier absorption to heat the carrier plasma. Although some Hg l-x Cd x Te material parameters are now relatively well known, existing data for many of the processes are inadequate for cases far away from thermal equilibrium. Furthermore, the role of Auger recombination in relation to non-intrinsic recombination has been a matter of debate lately. In this respect, information from

Pulse number control of electrical resistance for multi-level storage based on phase change

International Nuclear Information System (INIS)

Nakayama, K; Takata, M; Kasai, T; Kitagawa, A; Akita, J

2007-01-01

Phase change nonvolatile memory devices composed of SeSbTe chalcogenide semiconductor thin film were fabricated. The resistivity of the SeSbTe system was investigated to apply to multi-level data storage. The chalcogenide semiconductor acts as a programmable resistor that has a large dynamic range. The resistance of the chalcogenide semiconductor can be set to intermediate resistances between the amorphous and crystalline states using electric pulses of a specified power, and it can be controlled by repetition of the electric pulses. The size of the memory cell used in this work is 200 nm thick with a contact area of 1 μm diameter. The resistance of the chalcogenide semiconductor gradually varies from 41 kΩ to 840 Ω within octal steps. The resistance of the chalcogenide semiconductor decreases with increasing number of applied pulses. The step-down characteristic of the resistance can be explained as the crystalline region of the active phase change region increases with increasing number of applied pulses. The extent of crystallization was also estimated by the overall resistivity of the active region of the memory cell

Optimal pulse sequence for ferumoxides-enhanced MR imaging used in the detection of hepatocellular carcinoma: a comparative study using seven pulse sequences

International Nuclear Information System (INIS)

Kim, Seung Hoon; Choi, Dongil; Lim, Jae Hoon; Lee, Won Jae; Jang, Hyun Jung; Lim, Kyo Keun; Lee, Soon Jin; Cho, Jae Min; Kim, Seung Kwon; Kim, Gab Chul

2002-01-01

To identify the optimal pulse sequence for ferumoxides-enhanced magnetic resonance (MR) imaging in the detection of hepatocelluar carcinomas (HCCs). Sixteen patients with 25 HCCs underwent MR imaging following intravenous infusion of ferumoxides. All MR studies were performed on a 1.5-T MR system, using a phased-array coil. Ferumoxides (Feridex IV) at a dose of 15 μmol/Kg was slowly infused intravenously, and axial images of seven sequences were obtained 30 minutes after the end of infusion. The MR protocol included fast spin-echo (FSE) with two echo times (TR3333-8571/TE18 and 90-117), singleshot FSE (SSFSE) with two echo times (TR∞/TE39 and 98), T2-weighted gradient-recalled acquisition in the steady state (GRASS) (TR216/TE20), T2-weighted fast multiplanar GRASS (FMPGR) (TR130/TE8.4-9.5), and T2-weighted fast multiplanar spoiled GRASS (FMPSPGR) (TR130/TE8.4-9.5). Contrast-to-noise ratios (CNRs) of HCCs determined during the imaging sequences formed the basis of quantitative analysis, and images were qualitatively assessed in terms of lesion conspicuity and image artifacts. The diagnostic accuracy of all sequences was assessed using receiver operating characteristic (ROC) analysis. Quantitative analysis revealed that the CNRs of T2-weighted FMPGR and T2-weighted FMPSPGR were significantly higher than those of the other sequences, while qualitative analysis showed that image artifacts were prominent at T2-weighted GRASS imaging. Lesion conspicuity was statistically significantly less clear at SSFSE imaging. In term of lesion detection, T-weighted FMPGR, T2- weighted FMPSPGR, and proton density FSE imaging were statistically superior to the others. T2-weighted FMPGR, T2- weighted FMPSPGR, and proton density FSE appear to be the optimal pulse sequences for ferumoxidesenhanced MR imaging in the detection of HCCs

Effect of Low Temperature on a 4 W/60 K Pulse-Tube Cryocooler for Cooling HgCdTe Detector

Science.gov (United States)

Zhang, Ankuo; Liu, Shaoshuai; Wu, Yinong

2018-04-01

Temperature is an extremely important parameter for the material of the space-borne infrared detector. To cool an HgCdTe-infrared detector, a Stirling-type pulse-tube cryocooler (PTC) has been developed based on a great deal of numerical simulations, which are performed to investigate the thermodynamic behaviors of the PTC. The effects of different low temperatures are presented to analyze different energy flows, losses, phase shifts, and impedance matching of the PTC at a temperature range of 40-120 K, where woven wire screens are used. Finally, a high-efficiency coaxial PTC has been designed, built, and tested, operating around 60 K after a number of theoretical and experimental studies. The PTC can offer a no-load refrigeration temperature of 40 K with an input electric power of 150 W, and a cooling power of 4 W at 60 K is obtained with Carnot efficiency of 12%. In addition, a comparative study of simulation and experiment has been carried out, and some studies on reject temperatures have been presented for a thorough understanding of the PTC system.

Ultrafast optical control of the electronic properties of ZrTe5

Energy Technology Data Exchange (ETDEWEB)

Crepaldi, Alberto; Cilento, Federico [Elettra-Sincrotrone Trieste (Italy); Manzoni, Giulia; Sterzi, Andrea; Diego, Michele [Universita degli Studi di Trieste (Italy); Kuhn, Timo; Gragnaniello, Luca; Fonin, Mikhail [University of Konstanz (Germany); Autes, Gabriel; Bugnon, Philippe; Magrez, Arnaud; Berger, Helmuth; Yazyev, Oleg; Grioni, Marco [EPFL (Switzerland); Zacchigna, Michele [C.N.R.-I.O.M. (Italy); Parmigiani, Fulvio [Elettra-Sincrotrone Trieste (Italy); Universita degli Studi di Trieste (Italy)

2016-07-01

ZrTe5 has recently attracted considerable interest owing to some unique, albeit only partially understood, properties. The electrical resistivity exhibits a peak at a temperature where the nature of the charge carriers changes from holes to electrons. The observed negative magneto-resistance has been attributed to the presence of Dirac particles, either three-dimensional or two-dimensional and spin-polarized. Our time and angle-resolved photoelectron spectroscopy (tr-ARPES) study has addressed the origin of the anomalous transport behavior of ZrTe5, while showing the possibility to control the electronic properties of this material via sub-ps IR laser pulses. These observations open the way to the exploitation of ZrTe5 as a platform for magnetoelectric optical and thermoelectric transport applications. Finally, by combining ab initio calculations, ARPES and scanning tunneling microscopy (STM) we are contributing to shed light on the topological nature of ZrTe5, which is shown to be close to transition between strong and weak topological insulator phases.

Epitaxial growth of Ge-Sb-Te based phase change materials

International Nuclear Information System (INIS)

Perumal, Karthick

2013-01-01

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb 2 Te 3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb 2 Te 3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

Selection of optimal pulse sequences for conventional and dynamic MR imaging with Gd-DTPA; A fundamental study

Energy Technology Data Exchange (ETDEWEB)

Maeda, Miho; Kita, Keisuke; Maeda, Masayuki (Wakayama Medical Coll. (Japan)) (and others)

1989-11-01

Gadolinium-DTPA (Gd-DTPA) enhances contrast between tissues in magnetic resonance (MR) imaging. The enhancement of tissues depends partly upon the pulse sequences, and the optimal pulse sequence is also influenced by the tissue cncentration of Gd-DTPA. We prepared phantoms of 25% albumin solutions with various concentrations of Gd-DTPA, and imaged them using various pulse sequences with 1.5-T MR system. We also performed MR imaging of 16 patients with tumors (10 brain tumors and 6 hepatic tumors) before and after intravenous administration of Gd-DTPA (0.1 mmol/kg); 6 patients with hepatic tumors underwent dynamic MR imaging during suspended respiration. We made a theoretical equation to calculate the concentration of Gd-DTPA and estimated its tissue concentration in tumors at 0{approx}0.2 mmol/kg. Within these tissue concentrations, the enhancement-to-noise (E/N) ratio was larger in FISP (flip angle of 90deg, TR pf 300 msec, minimal TE) and SE (TR of 400 msec, minimal TE) sequences than in other sequences observed. These sequences may be preferable for conventional enhanced-MRI. Among the pulse sequences with TR of less than 100 msec, FISP (flip angle of 90deg, TR of less than 100 msec, minimal TE) had the largest E/N ratio; which may be useful for dynamic MRI during suspended respiration. The importance of selecting the optimal pulse sequences according to the imaging modality used will be discussed. (author).

Electrodeposition of textured Bi{sub 27}Sb{sub 28}Te{sub 45} nanowires with enhanced electrical conductivity

Energy Technology Data Exchange (ETDEWEB)

Hasan, Maksudul, E-mail: maksudul.hasan@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Gautam, Devendraprakash [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Enright, Ryan [Thermal Management Research Group, Efficient Energy Transfer Department, Bell Labs Ireland, Alcatel-Lucent Ireland Ltd., Dublin (Ireland)

2016-04-15

This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi{sub 27}Sb{sub 28}Te{sub 45} nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10{sup 4} S m{sup −1}) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.

A simple optical spectral calibration technique for pulsed THz sources

NARCIS (Netherlands)

Wijnen, F.J.P.; G. Berden,; Jongma, R.T.

2010-01-01

We have quantified the sensitivity of a simple method to measurethe frequency spectrum of pulsed terahertz (THz) radiation. The THzpulses are upconverted to the optical regime by sideband generation in a zinctelluride (ZnTe) crystal using a continuous wave (cw) narrow-bandwidthnear-infrared laser. A

Laser ablation in CdZnTe crystal due to thermal self-focusing: Secondary phase hydrodynamic expansion

Energy Technology Data Exchange (ETDEWEB)

Medvid’, A., E-mail: mychko@latnet.lv [Riga Technical University, 3 Paula Valdena Str., LV-1048 Riga (Latvia); Mychko, A.; Dauksta, E. [Riga Technical University, 3 Paula Valdena Str., LV-1048 Riga (Latvia); Kosyak, V. [Sumy State University, 2, Rymskogo-Korsakova St., 40007 Sumy (Ukraine); Grase, L. [Riga Technical University, 3 Paula Valdena Str., LV-1048 Riga (Latvia)

2016-06-30

Highlights: • We found two laser induced threshold intensity for CdZnTe crystal. • The laser beam self-focusing lead to increase of intensity of laser radiation at exit surface. • Laser ablation is a result of Te inclusion hydrodynamic expansion. - Abstract: The present paper deals with the laser ablation in CdZnTe crystal irradiated by pulsed infrared laser. Two values of threshold intensities of the laser ablation were determined, namely of about 8.5 and 6.2 MW/cm{sup 2} for the incident and the rear surfaces, correspondingly. Lower intensity of the laser ablation for the rear surface is explained by thermal self-focusing of the laser beam in the CdZnTe crystal due to heating of Te inclusions with a following hydrodynamic expansion.

Extended defects in MBE-grown CdTe-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Wichrowska, Karolina; Wosinski, Tadeusz; Kret, Slawomir; Chusnutdinow, Sergij; Karczewski, Grzegorz [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Rawski, Michal [Analytical Laboratory, Maria Curie-Sklodowska University, Lublin (Poland); Yastrubchak, Oksana [Institute of Physics, Maria Curie-Sklodowska University, Lublin (Poland)

2015-08-15

Extended defects in the p -ZnTe/n -CdTe heterojunctions grown by the molecular-beam epitaxy technique on two different substrates, GaAs and CdTe, have been investigated by deep-level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Four hole traps, called H1 to H4, and one electron trap, called E3, have been revealed in the DLTS spectra measured for the heterojunctions grown on the GaAs substrates. The H1, H3, H4 and E3 traps have been attributed to the electronic states of dislocations on the ground of their logarithmic capture kinetics. The DLTS peaks associated with the H1 and E3 traps were not observed in the DLTS spectra measured for the heterojunction grown on the CdTe substrate. They are most likely associated with threading dislocations generated at the mismatched interface with the GaAs substrate. Cross-sectional TEM images point out that they are dislocations of the 60 -type. In both the types of heterojunctions the H4 trap was observed only under forward-bias filling pulse, suggesting that this trap is associated with the CdTe/ZnTe interface. In addition, TEM images revealed also the presence of intrinsic and extrinsic stacking faults in the CdTe layers, which may considerably affect their electronic properties. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Improvement of radiation response characteristic on CdTe detectors using fast neutron irradiation

International Nuclear Information System (INIS)

Miyamaru, Hiroyuki; Takahashi, Akito; Iida, Toshiyuki

1999-01-01

The treatment of fast neutron pre-irradiation was applied to a CdTe radiation detector in order to improve radiation response characteristic. Electron transport property of the detector was changed by the irradiation effect to suppress pulse amplitude fluctuation in risetime. Spectroscopic performance of the pre-irradiated detector was compared with the original. Additionally, the pre-irradiated detector was employed with a detection system using electrical signal processing of risetime discrimination (RTD). Pulse height spectra of 241 Am, 133 Ba, and 137 Cs gamma rays were measured to examine the change of the detector performance. The experimental results indicated that response characteristic for high-energy photons was improved by the pre-irradiation. The combination of the pre-irradiated detector and the RTD processing was found to provide further enhancement of the energy resolution. Application of fast neutron irradiation effect to the CdTe detector was demonstrated. (author)

Scaling linear colliders to 5 TeV and above

International Nuclear Information System (INIS)

Wilson, P.B.

1997-04-01

Detailed designs exist at present for linear colliders in the 0.5-1.0 TeV center-of-mass energy range. For linear colliders driven by discrete rf sources (klystrons), the rf operating frequencies range from 1.3 GHz to 14 GHz, and the unloaded accelerating gradients from 21 MV/m to 100 MV/m. Except for the collider design at 1.3 GHz (TESLA) which uses superconducting accelerating structures, the accelerating gradients vary roughly linearly with the rf frequency. This correlation between gradient and frequency follows from the necessity to keep the ac open-quotes wall plugclose quotes power within reasonable bounds. For linear colliders at energies of 5 TeV and above, even higher accelerating gradients and rf operating frequencies will be required if both the total machine length and ac power are to be kept within reasonable limits. An rf system for a 5 TeV collider operating at 34 GHz is outlined, and it is shown that there are reasonable candidates for microwave tube sources which, together with rf pulse compression, are capable of supplying the required rf power. Some possibilities for a 15 TeV collider at 91 GHz are briefly discussed

MoSbTe for high-speed and high-thermal-stability phase-change memory applications

Science.gov (United States)

Liu, Wanliang; Wu, Liangcai; Li, Tao; Song, Zhitang; Shi, Jianjun; Zhang, Jing; Feng, Songlin

2018-04-01

Mo-doped Sb1.8Te materials and electrical devices were investigated for high-thermal-stability and high-speed phase-change memory applications. The crystallization temperature (t c = 185 °C) and 10-year data retention (t 10-year = 112 °C) were greatly enhanced compared with those of Ge2Sb2Te5 (t c = 150 °C, t 10-year = 85 °C) and pure Sb1.8Te (t c = 166 °C, t 10-year = 74 °C). X-ray diffraction and transmission electron microscopy results show that the Mo dopant suppresses crystallization, reducing the crystalline grain size. Mo2.0(Sb1.8Te)98.0-based devices were fabricated to evaluate the reversible phase transition properties. SET/RESET with a large operation window can be realized using a 10 ns pulse, which is considerably better than that required for Ge2Sb2Te5 (∼50 ns). Furthermore, ∼1 × 106 switching cycles were achieved.

Preparation and characterization of Ge2Sb2Te5 phase change films on elastic substrates by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Lu, Hongbing; Thelander, Erik; Benke, Julia; Rauschenbach, Bernd [Leibniz Institute of Surface Modification, 04318 Leipzig (Germany)

2012-07-01

Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) thin films have attracted a great deal of interest as an active layer for data storage media due to its high switching rate and extremely good reversibility. Here we demonstrate the preparation of high-quality GST films on elastic polyimide substrates by pulsed laser deposition (PLD). The composition and chemical state of the films were investigated by energy dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS), respectively. The effect of annealing temperature on the crystalline nature of the films was also studied. As-deposited films were found to be amorphous. Crystalline phases with face-centered cubic and hexagonal structures appeared at 180 and 300 degrees, respectively. Importantly, no phase separation could be seen in the annealed films. Furthermore, reflectivity measurements were performed to characterize the as-deposited and annealed films, showing a high reflectivity contrast (up to 23%) between full crystalline and amorphous films. Our results indicate that PLD deposited GST film on polyimide substrate is a promising candidate for use in future flexible memory devices.

RF power sources for 5--15 TeV linear colliders

International Nuclear Information System (INIS)

Wilson, P.B.

1996-09-01

After outlining the design of the NLC rf system at 1 TeV, the possibility of a leap in linear collider energy into the 5--15 TeV energy range is considered. To keep the active accelerator length and ac wall-plug power within reasonable bounds, higher accelerating gradients at higher rf frequencies will be necessary. Scaling relations are developed for basic rf system parameters as a function of frequency, and some specific parameter examples are given for colliders at 34 Ghz and 91 Ghz. Concepts for rf pulse compression system design and for high power microwave sources at 34 Ghz (for example sheet-beam and multiple-beam klystrons) are briefly discussed

Discrimination of alpha particles in CdZnTe detectors with coplanar grid for the COBRA experiment

Energy Technology Data Exchange (ETDEWEB)

Rebber, Henning [Universitaet Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, 22761 Hamburg (Germany); Collaboration: COBRA-Collaboration

2016-07-01

The aim of the COBRA experiment is the search for neutrinoless double beta decay using CdZnTe semiconductor detectors. A background rate in the order of 10{sup -3} counts per keV, kg and year is intended in order to be sensitive to a half-life larger than 10{sup 26} years. Measurements from a demonstrator setup and Monte Carlo simulations indicate that a large background component is due to alpha particles. These generate charge clouds of only few μm in diameter in the detector, leading to characteristic pulse features. Parameter-based cut criteria were developed to discriminate alpha events by means of their pulse shapes. The cuts were tested on data from alpha and beta irradiation of a (1 x 1 x 1) cm{sup 3} CdZnTe detector with coplanar grid. The pulse shapes of all event signals were read out by FADCs with a sampling rate of 100 MHz. The signals were reproduced by a detector simulation which hence was used to study the cuts for energies up to 3 MeV and different detector regions.

Epitaxial growth of Ge-Sb-Te based phase change materials

Energy Technology Data Exchange (ETDEWEB)

Perumal, Karthick

2013-07-30

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

Cs-K-Te photo cathodes: a promising electron source for free-electron lasers

NARCIS (Netherlands)

Bisero, D.; Bisero, D.; van Oerle, B.M.; van Oerle, B.M.; Ernst, G.J.; Verschuur, Jeroen W.J.; Witteman, W.J.

1998-01-01

The characteristics of Cs–K–Te photo-cathodes when used in a photo-cathode linear accelerator will be presented together with a short review of their photo-emissive properties. The cathodes have been illuminated by light pulses obtained by frequency quadrupling the light of a Nd:YLF laser. The

Partial enthalpies of Bi and Te in Bi-Te melts and of In and Te in In-Te melts

International Nuclear Information System (INIS)

Yassin, Abeer; Amzil, Abdelhamid; Castanet, Robert

2000-01-01

Full text.Calorimetric measurement are reported which allow the enthalpic behaviour of Bi-Te melts to be established. Further work is required, however, to supplement results obtained for In-Te melts. The partial enthalpies of bismuth and tellurium in the Bi-Te melts at 755K and those of indium and tellurium in the In-Te melts at 1010 and 987K were measured at high dilution by direct reaction calorimetry (drop method) with the help of a Tian-Calvet calorimeter. The limiting partial enthalpies of the components were deduced by extrapolation at infinite dilution: Δh f,∞ B i(755K)/KJ.mol -1 = -34.0 and Δh f,∞ Te(755K) /KJ·mol -1 = -24.1 in the Bi-Te melts Δh f,∞ In(1010K) /KJ·mol -1 = -75.9 and Δh f,∞ Te(1010K) /KJ·mol -1 = -47.8 in the In-Te melts Δh f,∞ In(987K) /KJ·mol -1 = -75.2 and Δh f,∞ Te(987K) /KJ·mol -1 = -48.0 in the In-Te melts

Fast Neutron Detection Using Pixelated CdZnTe Spectrometers

Science.gov (United States)

Streicher, Michael; Goodman, David; Zhu, Yuefeng; Brown, Steven; Kiff, Scott; He, Zhong

2017-07-01

Fast neutrons are an important signature of special nuclear materials (SNMs). They have a low natural background rate and readily penetrate high atomic number materials that easily shield gamma-ray signatures. Therefore, they provide a complementary signal to gamma rays for detecting shielded SNM. Scattering kinematics dictate that a large nucleus (such as Cd or Te) will recoil with small kinetic energy after an elastic collision with a fast neutron. Charge carrier recombination and quenching further reduce the recorded energy deposited. Thus, the energy threshold of CdZnTe detectors must be very low in order to sense the small signals from these recoils. In this paper, the threshold was reduced to less than 5 keVee to demonstrate that the 5.9-keV X-ray line from 55Fe could be separated from electronic noise. Elastic scattering neutron interactions were observed as small energy depositions (less than 20 keVee) using digitally sampled pulse waveforms from pixelated CdZnTe detectors. Characteristic gamma-ray lines from inelastic neutron scattering were also observed.

Characterisation of Redlen high-flux CdZnTe

Science.gov (United States)

Thomas, B.; Veale, M. C.; Wilson, M. D.; Seller, P.; Schneider, A.; Iniewski, K.

2017-12-01

CdZnTe is a promising material for the current generation of free electron laser light sources and future laser-driven γ-ray sources which require detectors capable of high flux imaging at X-ray and γ-ray energies (> 10 keV) . However, at high fluxes CdZnTe has been shown to polarise due to hole trapping, leading to poor performance. Novel Redlen CdZnTe material with improved hole transport properties has been designed for high flux applications. Small pixel CdZnTe detectors were fabricated by Redlen Technologies and flip-chip bonded to PIXIE ASICs. An XIA Digital Gamma Finder PIXIE-16 system was used to digitise each of the nine analogue signals with a timing resolution of 10 ns. Pulse shape analysis was used to extract the rise times and amplitude of signals. These were measured as a function of applied bias voltage and used to calculate the mobility (μ) and mobility-lifetime (μτ) of electrons and holes in the material for three identical detectors. The measured values of the transport properties of electrons in the high-flux-capable material was lower than previously reported for Redlen CdZnTe material (μeτe ~ 1 × 10-3 cm2V-1 and μe ~ 1000 cm2V-1s-1) while the hole transport properties were found to have improved (μhτh ~ 3 × 10-4 cm2V-1 and μh ~ 100 cm2V-1s-1).

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

International Nuclear Information System (INIS)

Oliveira, Icimone B.

2011-01-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

Energy Technology Data Exchange (ETDEWEB)

Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

2011-07-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

B-factory via conversion of 1-TeV electron beams into 1-TeV photon beams

International Nuclear Information System (INIS)

Mtingwa, S.K.

1991-01-01

This paper reports on the study of CP violation and rare decays of beauty particles which are pressing problems in high-energy physics. It is known that one should analyze beauty decays of at least the order of 10 8 or 19 9 . Thus, numerous proposals for beauty factories are being discussed now, although some of these projects are likely to supply much smaller numbers of beauty events. At the same time, at present several projects, such as CLIC (Cern Linear Collider), expect to build linear e + e - colliders with beam energies up to 1 TeV. The aim of this work is to show that the possibility exists of using the unique features of the discussed teraelectron volt electron linacs to obtain a facility for the production of beauty via photoproduction of nuclei. Unique features of high-energy photoproduction are as follows. The rather large fraction (∼2 x 10 -4 ) of events with beauty at E γ ∼ 1 TeV. Beauty particles are produced with about equally large momenta ∼0.05 E γ and at rather large transverse momenta p t ∼ m b . The following scheme can be envisioned. The 1-TeV electron beam is Compton scattered off a low-energy (∼ 1-eV) laser pulse. The laser photons are thus converted into a highly collimated beam of energy E γ ∼ E e , directed along the electron's original line of motion. Such schemes to produce high-energy photon beams have been discussed. These 1-TeV photons are subsequently scattered onto a nuclear target to produce b bar b pairs

Crystallization behavior of Ge-doped eutectic Sb70Te30 films in optical disks

International Nuclear Information System (INIS)

Khulbe, Pramod K.; Hurst, Terril; Mansuripur, Masud; Horie, Michikazu

2002-01-01

We report laser-induced crystallization behavior of binary Sb-Te and ternary Ge-doped eutectic Sb70Te30 thin film samples in a typical quadrilayer stack as used in phase-change optical disk data storage. Several experiments have been conducted on a two-laser static tester in which one laser operating in pulse mode writes crystalline marks on amorphous film or amorphous marks on crystalline film, while the second laser operating at low-power cw mode simultaneously monitors the progress of the crystalline or amorphous mark formation in real time in terms of the reflectivity variation. The results of this study show that the crystallization kinetics of this class of film is strongly growth dominant, which is significantly different from the crystallization kinetics of stochiometric Ge-Sb-Te compositions. In Sb-Te and Ge-doped eutectic Sb70Te30 thin-film samples, the crystallization behavior of the two forms of amorphous states, namely, as-deposited amorphous state and melt-quenched amorphous state, remains approximately same. We have also presented experiments showing the effect of the variation of the Sb/Te ratio and Ge doping on the crystallization behavior of these films

Front-end electronics for the readout of CdZnTe sensors

CERN Document Server

Moraes, D; Rudge, A

2006-01-01

The CERN_DxCTA is a front-end ASIC optimized for the readout of CdZn Te sensors. The chip is implemented in 0.25 mum CMOS technology. The circuit consists of 128 channels equipped with a transimpedance amplifier followed by a gain-shaper stage with 20 ns peaking time and two discriminators, allowing two threshold settings. Each discriminator includes a 5-bit trim DAC and is followed by an 18-bit static ripple-counter. The channel architecture is optimized for the detector characteristics in order to achieve the best energy resolution at counting rates of up to 5 M counts/second. Complete evaluation of the circuit is presented using electronic pulses and Cd ZnTe pixel detectors.

Numerical design and analysis of a compact TE10 to TE01 mode transducer

International Nuclear Information System (INIS)

Tantawi, S.; Ko, K.; Kroll, N.

1993-04-01

A high-power low-loss mode transducer design has been proposed to adapt the output of the X-Band klystron, WR90 rectangular waveguide, to the input of the pulse compression system, SLED II, which utilizes overmoded circular waveguides operating in the low-loss TE 01 mode. This device is much more compact than the conventional Marie type mode converters. The device splits the incoming klystron output into two separate rectangular guides that are then fed into a circular guide through a four-slot arrangement. We will use both MAFIA and HFSS to calculate the transmission properties of the three-dimensional structure. We will also determine the extent of mode contamination and compare the numerical results with experiments

Pulse Power Modulator development for the CLIC Damping Ring Kickers

CERN Document Server

Holma, Janne

2012-01-01

The Compact Linear Collider (CLIC) study is exploring the scheme for an electron-positron collider with high luminosity (10-34 – 10-35 cm-2s-1) and a nominal centre-of-mass energy of 3 TeV: CLIC would complement LHC physics in the multi-TeV range. The CLIC design relies on Pre-Damping Rings (PDR) and Damping Rings (DR) to achieve the very low emittance, through synchrotron radiation, needed for the luminosity requirements of CLIC. To limit the beam emittance blow-up due to oscillations, the pulse power modulators for the DR kickers must provide extremely flat, high-voltage pulses: the 2 GHz specification called for a 160 ns duration flat-top of 12.5 kV, 250 A, with a combined ripple and droop of not more than ±0.02 %. In order to meet these demanding specifications, a combination of broadband impedance matching, optimized electrical circuit layout and advanced control techniques is required. A solid-state modulator, the inductive adder, is the most promising approach to meeting the demanding specifications...

Energy relaxation in IR laser excited Hg{sub 1-x}Cd{sub x}Te

Energy Technology Data Exchange (ETDEWEB)

Storebo, A K; Brudevoll, T [FFI - Norwegian Defence Research Establishment, PO Box 25, NO-2027 Kjeller, Norway NTNU (Norwegian University of Science and Technology) (Norway); Olsen, O; Norum, O C [Department of Physics and Department of Electronics and Telecommunications NO-7491 Trondheim (Norway); Breivik, M, E-mail: asta-katrine.storebo@ffi.n [Department of Electronics and Telecommunications NO-7491 Trondheim (Norway)

2009-11-15

IR laser excitation of Hg{sub l-x}Cd{sub x}Te by low-fluence femtosecond and high fluence microsecond pulses was explored for the technologically important alloy fractions x {approx} 0.2 and x {approx} 0.28. We have used first principles (LAPW) electronic structure calculations and finite element modelling, supported by Monte Carlo simulation for the description of femtosecond pulse carrier relaxation and the transport parameters. Laser wavelengths considered were 6.4 - 10.6 {mu}m for x {approx} 0.2 and 3.8 - 4.8 {mu}m for x {approx} 0.28, with an incident 1 microsecond pulse fluence of 2 J/cm{sup 2}. Many energy transfer mechanisms are invoked due to the long timescales of the microsecond pulses, and a main challenge is therefore to elucidate how these interplay in situations away from thermal equilibrium. Mechanisms studied include one- and two-photon absorption (OPA and TPA) across the band gap, inter-valence band absorption (IVA) between light- and heavy hole bands, electron-hole recombination/impact ionization, band gap renormalisation, intra-band free carrier absorption (FCA), excess carrier temperatures, non-equilibrium phonon generation, and refractive index changes. In the high fluence case, lattice temperatures evolve considerably during the laser pulse in response to the heated carriers. The chosen photon energies lie just above the band gap at the starting lattice temperature of 77 K, and nonlinear effects therefore dominate as the material heats up and the band gap begins to exceed the photon energy. Because of the low photon energy we must rely on Auger recombination, inter-valence band absorption and free carrier absorption to heat the carrier plasma. Although some Hg{sub l-x}Cd{sub x}Te material parameters are now relatively well known, existing data for many of the processes are inadequate for cases far away from thermal equilibrium. Furthermore, the role of Auger recombination in relation to non-intrinsic recombination has been a matter of debate

Photonic-band-gap gyrotron amplifier with picosecond pulses

Science.gov (United States)

Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.; Shapiro, Michael A.; Temkin, Richard J.

2017-12-01

We report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gain is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260-800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.

Cd-Te-In oxide thin films as possible transparent buffer layer in CdTe based solar cells

Energy Technology Data Exchange (ETDEWEB)

Castro-Rodriguez, R; Camacho, J M; Pena, J L [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310, Merida, Yucatan (Mexico); Martel, A; Mendez-Gamboa, J, E-mail: romano@mda.cinvestav.m [Facultad de Ingenieria, Universidad Autonoma de Yucatan. AP 150 Cordemex, 97310 Merida, Yucatan (Mexico)

2009-05-01

Cd-Te-In-oxide thin films were grown by Pulsed Laser Deposition (PLD) technique using CdTe powder embedded in a matrix of indium metallic as target. The films were deposited at different oxygen pressures (P{sub o2}) from 15 to 50 mTorr at substrate temperature of 420{sup 0}C. Sheet resistance (R{sub sheet}) and transmission spectrum were measured as a function of P{sub o2}. From measurements of optical transmission, the Photonic Flux Density (PFD) spectrum were obtained and the integral of these PFD for each film were evaluated between energy range of 1.5 eV and 2.4 eV for obtain the amount of photons that can be transferred across the film in this range of solar energy spectrum. These values were evaluated over the R{sub sheet} to be used as a figure of merit. The best choice in our conditions was the films with P{sub o2} =28.5 mTorr, where the figure of merit reaches the maximum value.

Pulse sequence optimization for superparamagnetic iron oxide-enhaced MR imaging in the detection of hepatic VX2 tumors in rabbits

International Nuclear Information System (INIS)

Jang, Hyun Jung; Han, Joon Koo; Lee, Kyoung Ho; Kim, Se Hyung; Choi, Byung Ihn; Kim, Tae Kyoung

2003-01-01

The purpose of this experimental study was to determine the optimal pulse sequences for SPIO-enhanced MR imaging in the evaluation of multiple hepatic tumors. Twelve rabbits with multiple VX2 liver tumors underwent SPOI-enhanced MRI using the following nine pulse sequences: TSE T2-weighted imaging (T2W1), TSE proton density-weighted imaging(PDWI), and GRE T2*-weighted imaging (T2*W1) with seven different echo times (TE). Liver-lesion contrast-to-noise ratios (CNRs) were calculated, and images were also assessed qualitatively by two radiologists, who reached a consensus as to lesion conspicuity and imaging artifacts using a four-level scale. By means of pathologic correlation, the sensitivity and positive predictive value of each sequence was calculated. TSE T2W1 and long-TE (35 msec) FLASH T2*W1 showed the highest liver-lesion CNR. The best lesion conspicuity was seen at TSE T2W1 and medium-TE (12 msec) GRE T2*W1. Short TE GRE T2*W1 showed the least imaging artifacts. The four sequences which demonstrated the best sensitivity were medium-TE (12 msec), GRE T2*W1 (FLASH, 84%; FISP, 82%), TSE W2T1 (79%), and TSE PDWI (76%). All nine sequences showed overall high positive predictive value (86-97%), with no statistically significant difference (p>0.05). In terms of image quality and the detection of sensitivity, TSE T2W1 and medium TE (12 msec) GRE T2*W1 were the top two pulse sequences among the various sequences used for no SPIO-enhanced MRI. They are thus considered to be optimal sequences for evaluating multiple malignant hepatic tumors

Femtosecond response time measurements of a Cs2Te photocathode

Science.gov (United States)

Aryshev, A.; Shevelev, M.; Honda, Y.; Terunuma, N.; Urakawa, J.

2017-07-01

Success in design and construction of a compact, high-brightness accelerator system is strongly related to the production of ultra-short electron beams. Recently, the approach to generate short electron bunches or pre-bunched beams in RF guns directly illuminating a high quantum efficiency semiconductor photocathode with femtosecond laser pulses has become attractive. The measurements of the photocathode response time in this case are essential. With an approach of the interferometer-type pulse splitter deep integration into a commercial Ti:Sa laser system used for RF guns, it has become possible to generate pre-bunched electron beams and obtain continuously variable electron bunch separation. In combination with a well-known zero-phasing technique, it allows us to estimate the response time of the most commonly used Cs2Te photocathode. It was demonstrated that the peak-to-peak rms time response of Cs2Te is of the order of 370 fs, and thereby, it is possible to generate and control a THz sequence of relativistic electron bunches by a conventional S-band RF gun. This result can also be applied for investigation of other cathode materials and electron beam temporal shaping and further opens a possibility to construct wide-range tunable, table-top THz free electron laser.

Utes for space heating and cooling in North Africa

International Nuclear Information System (INIS)

Nordell, B.; Grein, M. a.

2006-01-01

The North Africa climate is dry and warm with annual mean temperature from 15 degree centigrade to 25 degree centigrade, with a temperature difference of 20 degree centigrade between the coldest and warmest month. Heating is needed during the short winter and there is a large cooling demand during the long summer. Since the undisturbed ground temperature is equal to the annual mean air temperature, the ground is warmer than the air during the winter and colder than air during summer. This is what is required for the direct use of the ground for heating and cooling. In such systems, ground coupled heating and cooling systems, and also in storage systems, Underground Thermal Energy Storage (UTES), some kind of underground duct (PIPE) system is used to inject or extract heat from the ground. Thermal energy is then stored and recovered by heating and cooling of the ground, while the ducts are the heat exchangers with the system. The duct system could be placed horizontally or vertically (e.g. in boreholes) in the ground. In many cases heat pumps or cooling machines are included in the systems but in favourable cases, such as in the North African climate, the ground can be used directly for heating and cooling. then, only a circulation pump is used to pump water through the underground duct system with high efficiencies. Such systems can also be used for thermal energy storage, during shorter periods (diurnal) or even between the seasons. In September 2005 Sebha University and Luleu University of Technology started a Libyan Swedish collaboration to develop and implement these systems for the North African climate. Sweden has considerable experience in ground coupled systems, theoretically and practically, and there are presently more than 300.000 systems in operation in Sweden, mainly for heating. Most of these are small-scale heating systems for singe-family houses but during the last decade several hundred large-scale systems have been built for heating and cooling of

34 GHz, 45 MW pulsed magnicon

International Nuclear Information System (INIS)

Nezhevenko, Oleg A.; LaPointe, Michael A.; Yakovlev, Vyacheslav P.; Hirshfield, Jay L.; Serdobintsev, Gennady V.; Kuznetsov, Gennady I.; Persov, Boris Z.; Fix, Alexander

2002-01-01

A high efficiency, high power magnicon at 34.272 GHz has been designed and built as a microwave source to develop RF technology for a future multi-TeV electron-positron linear collider. The tube is designed to provide a peak output power of ∼45 MW in a 1 microsecond pulse, with a gain of 55 dB, using a 500 kV, 220 A, 1 mm-diameter electron beam. The status of the tube itself as well as the near-term experimental program is presented

Magnicon development to power TeV colliders. Final report, 16 May 1991--14 May 1994

International Nuclear Information System (INIS)

Gold, S.H.; Manheimer, W.M.; Fliflet, A.

1997-01-01

The goal of this program was the development of a high power frequency-doubling magnicon amplifier at 11.4 GHz. The magnicon is an advanced open-quotes scanning-beamclose quotes microwave amplifier tube for use in powering future high gradient linear accelerators, such as the proposed TeV linear collider known as the Next Linear Collider (NLC). The rf source for the NLC must provide a power of 500 MW to 1 GW per tube in a 200 nsec pulse at a frequency in the range of 10-20 GHz. The required power can either be generated directly in 200 nsec pulses, or generated at longer pulse lengths (e.g., 1-2 μsec) and then pulse-compressed. Because the average power required by the NLC is so large, source efficiency is a crucial consideration

Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

Science.gov (United States)

Pelliciari, B.; Chamonal, J. P.; Destefanis, G. L.; Dicioccio, L.

1988-05-01

The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

Thermoelectric properties of c-GeSb{sub 0.75}Te{sub 0.5} to h-GeSbTe{sub 0.5} thin films through annealing treatment effects

Energy Technology Data Exchange (ETDEWEB)

Vora-ud, Athorn, E-mail: athornvora-ud@snru.ac.th [Program of Physics, Faculty of Science and Technology, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Thermoelectrics Research Center, Research and Development Institution, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Horprathum, Mati, E-mail: mati.horprathum@nectec.or.th [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Eiamchai, Pitak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Muthitamongkol, Pennapa; Chayasombat, Bralee; Thanachayanont, Chanchana [National Metal and Materials Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Pankiew, Apirak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Klamchuen, Annop [National Nanotechnology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Naenkieng, Daengdech; Plirdpring, Theerayuth; Harnwunggmoung, Adul [Thermoelectric and Nanotechnology Research Center, Faculty of Science and Technology, Rajamangala University of Technology Suvarnabhumi, Huntra Phranakhon, Si Ayutthaya 13000 (Thailand); Charoenphakdee, Anek [NANO-Thermoelectrics Research Center, Division of Applied Physics, Faculty of Sciences and Liberal Arts, Rajamangala University of Technology Isan, Mueng Nakorn Ratchasima 30000 Thailand (Thailand); Somkhunthot, Weerasak [Program of Physics, Faculty of Science and Technology, Loei Rajabhat University, Muang District, Loei 42000 (Thailand); and others

2015-11-15

Germanium–Antimony–Tellurium (Ge–Sb–Te) thin films were deposited on silicon wafers with 1-μm silicon dioxide (SiO{sub 2}/Si) by pulsed dc magnetron sputtering from a 99.99% GeSbTe target of 1:1:1 ratio at ambient temperature. The samples were annealed at 573, 623, 673, and 723 K for 3600 s in a vacuum state. The effects of the annealing treatment on phase identification, atomic composition, morphology and film thickness, carrier concentration, mobility, and Seebeck coefficient of the Ge–Sb–Te samples have been investigated by grazing-incidence X-ray diffraction, auger electron spectroscopy, field-emission scanning electron microscopy, Hall-effect measurements, and steady state method, respectively. The results demonstrated that the as-deposited Ge–Sb–Te sample was amorphous. Atomic composition of as-deposited and annealed films at 573 K and 623 K were GeSb{sub 0.75}Te{sub 0.5} while annealed films at 673 K and 723 K were GeSbTe{sub 0.5} due to Sb-rich GeSb{sub 0.75}Te{sub 0.5}. The samples annealed at 573 K and 623 K showed the crystal phases of cubic structure (c-GeSb{sub 0.75}Te{sub 0.5}) into hexagonal structure (h-GeSbTe{sub 0.5}) after annealing at 673 K and 723 K. The study demonstrated the insulating condition from the as-deposited GeSbTe film, and the changes towards the thermoelectric properties from the annealing treatments. The GeSbTe films annealed at 673 K yielded excellent thermoelectric properties with the electrical resistivity, Seebeck coefficient, and power factor at approximately 1.45 × 10{sup −5} Ωm, 71.07 μV K{sup −1}, and 3.48 × 10{sup −4} W m{sup −1} K{sup −2}, respectively. - Highlights: • GeSbTe thin films were successfully sputtered for thermoelectric properties. • GeSbTe films were examined among physical, electrical and thermoelectric properties. • Thermoelectric properties were discussed based on composition of the films.

Thermochemical properties of silver tellurides including empressite (AgTe) and phase diagrams for Ag-Te and Ag-Te-O

Science.gov (United States)

Voronin, Mikhail V.; Osadchii, Evgeniy G.; Brichkina, Ekaterina A.

2017-10-01

This study compiles original experimental and literature data on the thermodynamic properties (ΔfG°, S°, ΔfH°) of silver tellurides (α-Ag2Te, β-Ag2Te, Ag1.9Te, Ag5Te3, AgTe) obtained by the method of solid-state galvanic cell with the RbAg4I5 and AgI solid electrolytes. The thermodynamic data for empressite (AgTe, pure fraction from Empress Josephine Mine, Colorado USA) have been obtained for the first time by the electrochemical experiment with the virtual reaction Ag + Te = AgTe. The Ag-Te phase diagrams in the T - x and log fTe2 (gas) - 1/ T coordinates have been refined, and the ternary Ag-Te-O diagrams with Ag-Te-TeO2 (paratellurite) composition range have been calculated.

Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.

Science.gov (United States)

Chen, Xin; Zheng, Yonghui; Zhu, Min; Ren, Kun; Wang, Yong; Li, Tao; Liu, Guangyu; Guo, Tianqi; Wu, Lei; Liu, Xianqiang; Cheng, Yan; Song, Zhitang

2018-05-01

Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb 2 Te alloy. Sc 0.1 Sb 2 Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb 2 Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.

CdTe as a passivating layer in CdTe/HgCdTe heterostructures

International Nuclear Information System (INIS)

Virt, I. S.; Kurilo, I. V.; Rudyi, I. A.; Sizov, F. F.; Mikhailov, N. N.; Smirnov, R. N.

2008-01-01

CdTe/Hg 1-x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg 1-x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg 1-x Cd x Te films are reported.

Experimental Study of RF Pulsed Heating on Oxygen Free Electronic Copper

Energy Technology Data Exchange (ETDEWEB)

Pritzkau, David P.

2003-02-10

When the thermal stresses induced by RF pulsed heating are larger than the elastic limit, microcracks and surface roughening will occur due to cyclic fatigue. Therefore, pulsed heating limits the maximum surface magnetic field and through it the maximum achievable accelerating gradient. An experiment using circularly cylindrical cavities operating in the TE{sub 011} mode at a resonant frequency of 11.424 GHz was designed to study pulsed heating on Oxygen Free Electronic (OFE) copper. An X-band klystron delivered up to 10 MW to the cavities in 1.5 {micro}s pulses at 60 Hz repetition rate. One run was executed at a temperature rise of 120 K for 56 x 10{sup 6} pulses. Cracks at grain boundaries, slip bands and cracks associated with these slip bands were observed. The second run consisted of 86 x 10{sup 6} pulses with a temperature rise of 82 K, and cracks at grain boundaries and slip bands were seen. Additional information can be derived from the power-coupling iris, and we conclude that a pulsed temperature rise of 250 K for several million pulses leads to destruction of copper. These results can be applied to any mode of any OFE copper cavity.

Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS

DEFF Research Database (Denmark)

Wagner, Hans Peter; Kühnelt, M.; Langbein, Wolfgang Werner

1998-01-01

We have measured the absolute values of the second-harmonic generation (SHG) coefficient \\d\\ for the zinc-blende II-VI semiconductors ZnTe, ZnSe, and ZnS at room temperature. The investigated spectral region of the fundamental radiation lambda(F) ranges from 520 to 1321 nm using various pulsed...

Te/C nanocomposites for Li-Te Secondary Batteries

Science.gov (United States)

Seo, Jeong-Uk; Seong, Gun-Kyu; Park, Cheol-Min

2015-01-01

New battery systems having high energy density are actively being researched in order to satisfy the rapidly developing market for longer-lasting mobile electronics and hybrid electric vehicles. Here, we report a new Li-Te secondary battery system with a redox potential of ~1.7 V (vs. Li+/Li) adapted on a Li metal anode and an advanced Te/C nanocomposite cathode. Using a simple concept of transforming TeO2 into nanocrystalline Te by mechanical reduction, we designed an advanced, mechanically reduced Te/C nanocomposite electrode material with high energy density (initial discharge/charge: 1088/740 mA h cm-3), excellent cyclability (ca. 705 mA h cm-3 over 100 cycles), and fast rate capability (ca. 550 mA h cm-3 at 5C rate). The mechanically reduced Te/C nanocomposite electrodes were found to be suitable for use as either the cathode in Li-Te secondary batteries or a high-potential anode in rechargeable Li-ion batteries. We firmly believe that the mechanically reduced Te/C nanocomposite constitutes a breakthrough for the realization and mass production of excellent energy storage systems.

Charge transport properties of CdMnTe radiation detectors

Directory of Open Access Journals (Sweden)

Prokopovich D. A.

2012-10-01

Full Text Available Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55 cm2/Vs at room temperature.

The quadrupole interaction of 125Te and 129I in polycrystalline Te and in Te single crystals

International Nuclear Information System (INIS)

Langouche, G.; Rossum, M. van; Schmidt, K.P.; Coussement, R.

1975-01-01

Single crystals as hosts for Te and I sources were used in a study of Te. The Moessbauer spectra of 125 Te and 129 I in polycrystalline Te at liquid He temperature are given. Also presented are the Moessbauer spectra of 125 Te in a Te single crystal for the gamma ray parallel to the c-axis and perpendicular to the c-axis of the crystal at liquid He temperature. (Z.S.)

Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

Energy Technology Data Exchange (ETDEWEB)

Xu, Yadong, E-mail: xyd220@nwpu.edu.cn; Liu, Hang; He, Yihui; Yang, Rui; Luo, Lin; Jie, Wanqi

2014-11-05

Highlights: • Conductivity type and resistivity of undoped Te-rich ZnTe and CdTe are different. • Te{sub i} and V{sub Zn} as the dominant defects account for the p-type low resistivity ZnTe. • Te{sub Cd} as the principle defect leading to the light n-type high resistivity CdTe. • DAP and eA peaks dominate the luminescence with their intensities anti-correlated. - Abstract: Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Te{sub i}) and Zinc vacancies (V{sub Zn}) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te{sub Cd}) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Te{sub i} or V{sub Zn}. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with V{sub Zn} or close Frenkel pair V{sub Zn}–Zn{sub i}.

A thermodynamic stability of bulk and epitaxial CdHgTe, ZnHgTe and MnHgTe solid solutions

International Nuclear Information System (INIS)

Dejbuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.Eh.

2005-01-01

A thermodynamics of Cd 1-x Hg x Te, Zn x Hg 1-x Te and Mg x Hg 1-x Te alloys has been investigated for a delta-lattice parameter model. The phase diagrams obtained show the stability of Cd 1-x Hg x Te, Zn x Hg 1-x Te in the whole range of compositions, alongside with a miscibility gap for Mn x Hg 1-x Te being of 0.35 x Hg 1-x Te/CdTe and Mn x Hg 1-x Te/Cd 0.96 Zn 0.04 Te epitaxial films result in lowering critical temperatures and narrowing the miscibility gap [ru

Development of an advanced Two-Micron triple-pulse IPDA lidar for carbon dioxide and water vapor measurements

Science.gov (United States)

Petros, Mulugeta; Refaat, Tamer F.; Singh, Upendra N.; Yu, Jirong; Antill, Charles; Remus, Ruben; Taylor, Bryant D.; Wong, Teh-Hwa; Reithmaier, Karl; Lee, Jane; Ismail, Syed; Davis, Kenneth J.

2018-04-01

An advanced airborne triple-pulse 2-μm integrated path differential absorption (IPDA) lidar is under development at NASA Langley Research Center that targets both carbon dioxide (CO2) and water vapor (H2O) measurements simultaneously and independently. This lidar is an upgrade to the successfully demonstrated CO2 2-μm double-pulse IPDA. Upgrades include high-energy, highrepetition rate 2-μm triple-pulse laser transmitter, innovative wavelength control and advanced HgCdTe (MCT) electron-initiated avalanche photodiode detection system. Ground testing and airborne validation plans are presented.

Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

Science.gov (United States)

Rahim, M.; Fill, M.; Felder, F.; Chappuis, D.; Corda, M.; Zogg, H.

2009-12-01

Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at -172 °C were realized. Emission wavelength changes from 5 μm at -172 °C to 3.6 μm at 20 °C heat sink temperature. The active medium is a one wavelength thick PbTe layer grown by molecular beam epitaxy on a Si-substrate. It is followed by a 2.5 pair Pb1-yEuyTe/EuTe epitaxial Bragg mirror. The cavity is completed with an external curved Pb1-yEuyTe/BaF2 mirror. The VECSEL is optically pumped with 1.55 μm wavelength laser and In-soldered to Cu heat sink. No microstructural processing is needed.

Intense microwave pulse propagation through gas breakdown plasmas in a waveguide

International Nuclear Information System (INIS)

Byrne, D.P.

1986-01-01

High-power microwave pulse-compression techniques are used to generate 2.856 GHz pulses which are propagated in a TE 10 mode through a gas filled section of waveguide, where the pulses interact with self-generated gas-breakdown plasmas. Pulse envelopes transmitted through the plasmas, with duration varying from 2 ns to greater than 1 μs, and peak powers of a few kW to nearly 100 MW, are measured as a function of incident pulse and gas pressure for air, nitrogen, and helium. In addition, the spatial and temporal development of the optical radiation emitted by the breakdown plasmas are measured. For transmitted pulse durations ≥ 100 ns, good agreement is found with both theory and existing measurements. For transmitted pulse duration as short as 2 ns (less than 10 rf cycles), a two-dimensional model is used in which the electrons in the plasma are treated as a fluid whose interactions with the microwave pulse are governed by a self-consistent set of fluid equations and Maxwell's equations for the electromagnetic field. The predictions of this model for air are compared with the experimental results over a pressure range of 0.8 torr to 300 torr. Good agreement is obtained above about 1 torr pressure, demonstrating that microwave pulse propagation above the breakdown threshold can be accurately modeled on this time scale. 63 refs., 44 figs., 2 tabs

Near-infrared emission bands of TeH and TeD

Science.gov (United States)

Fink, E. H.; Setzer, K. D.; Ramsay, D. A.; Vervloet, M.

1989-11-01

High-resolution emission spectra of TeH and TeD have been obtained in the region 4200 to 3600 cm -1 using a Bomem DA3.002 Fourier transform spectrometer. Analyses are given for the 0-0 and 1-1 bands of the X 22Π{1}/{2}-X 12Π{3}/{2} system of TeH and for the 0-0 band of TeD. In addition the 2-0 vibrational overtone bands of 130TeH, 128TeH, and 126TeH are observed and analyzed. Accurate molecular constants are given for the first time.

PbTe mechanosynthesis from PbO and Te

International Nuclear Information System (INIS)

Rojas-Chavez, Hugo; Diaz-de la Torre, Sebastian; Jaramillo-Vigueras, David; Plascencia, Gabriel

2009-01-01

Experimental results concerning the mechanosynthesis (MSY), of PbTe from the PbO-Te powder system, at room temperature an atmospheric conditions are reported. XRD results for samples milled for and after 5.4 ks only show PbTe diffraction peaks; neither Te nor PbO or any other solid phase were detected. Particle size and morphology, was followed by SEM observations. Phase evolution and quantification was monitored by Rietveld refinements of the X-ray diffraction data. It was found that the use of lead oxide as a component of the mechanosynthesis system reduces milling time with respect to the Pb-Te metallic system with mechanical alloying.

UTE park group and other meso proterozoic units of the Nico Perez terrane: Rodina connecting

International Nuclear Information System (INIS)

Gaucher, C; Chemale, F.; Bossi, J.; Sial, A.; Chiglino, L.

2010-01-01

The Parque UTE Group is a volcano sedimentary succession metamorphosed in green schist facies, comprising (from base to top): the Canada Espinillo Formation (prasinites, pelites, andesite s), the Mina Valencia Formation (dolostones, limestones, marls) and the Cerro del Mast il Formation (black pelites, limestones, acid tuffs). Thickness of the GPU exceeds 2.5 km; base and top are not exposed. U-Pb zircon ages for basic magmatic rocks at the base and rhyolites at the top yielded 1492±4 and 1429±21 Ma, respectively. 13C values of carbonates of the Pug are characterized by a plateau at +1‰ VPDB, bracketed between two negative excursions.These values are consistent with an early Mesoproterozoic depositional age. Detrital zircon age spectra show that the source area of the GPU was the Nico Perez Terrane, being thus native to the Rio de la Plata Craton (Rpc). A Mesoproterozoic tectonic event at 1.25 Ga, recorded at both sides of the Sarandi del Yi mega shear, is discussed. New U-Pb zircon ages are presented for the La China Complex at its type area, where a schistosity N60W cuts the metamorphic banding and is parallel to thrusts dated K-Ar at 1253±32 Ma. The ages obtained are: 3096±45 Ma (main metamorphic event) and 1252 Ma (lower intercept). These data confirm the occurrence of a Grenvillian-aged tectonic event in Uruguay, suggesting that the RPC was part of the super continent Rodinia

New MR pulse sequence

International Nuclear Information System (INIS)

Harms, S.E.; Flamig, D.P.; Griffey, R.H.

1990-01-01

This paper describes a method for fat suppression for three-dimensional MR imaging. The FATS (fat-suppressed acquisition with echo time shortened) sequence employs a pair of opposing adiabatic half-passage RF pulses tuned on fat resonance. The imaging parameters are as follows: TR, 20 msec; TE, 21.7-3.2 msec; 1,024 x 128 x 128 acquired matrix; imaging time, approximately 11 minutes. A series of 54 examinations were performed. Excellent fat suppression with water excitation is achieved in all cases. The orbital images demonstrate superior resolution of small orbital lesions. The high signal-to-noise ratio (SNR) in cranial studies demonstrates excellent petrous bone and internal auditory canal anatomy

n-(CdMgTe/CdTe)/(p-(CdTe/ZnCdTe/ZnTe)/p-GaAs heterostructure diode for photosensor applications

Science.gov (United States)

Yahia, I. S.; AlFaify, S.; Abutalib, M. M.; Chusnutdinow, S.; Wojtowicz, T.; Karczewski, G.; Yakuphanoglu, F.; Al-Bassam, A.; El-Naggar, A. M.; El-Bashir, S. M.

2016-05-01

High quality n-(CdMgTe:I/n-CdTe:I)/(p-CdTe:N/p-ZnCdTe:N/p-ZnTe:N)/p-GaAs heterojunction diodes have been fabricated by molecular beam epitaxial growth. The illumination effect on the complex impedance and conductivity of heterostructure diode was investigated. The illumination intensities were taken up to the 200 mW/cm2 with frequency range of 42 Hz to 1 MHz. The observed real and imaginary parts of the complex impedance were strongly dependent on the illumination frequency. The inverse relation was observed between the illumination intensity and the complex impedance. The relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The radius of the Cole-Cole curve decreases with increasing illumination intensity. This suggests a mechanism of illumination dependent on the relaxation process. It is also found that the conductivity increases linearly with increasing the illumination intensity. We can conclude that the new design heterostructure diode in our work is a good candidate in photodetector and optoelectronic applications.

Electrochemical Determination of Uric Acid at CdTe Quantum Dot Modified Glassy Carbon Electrodes.

Science.gov (United States)

Pan, Deng; Rong, Shengzhong; Zhang, Guangteng; Zhang, Yannan; Zhou, Qiang; Liu, Fenghai; Li, Miaojing; Chang, Dong; Pan, Hongzhi

2015-01-01

Cyclic voltammetry and differential pulse voltammetry were used to investigate the electrochemical behavior of uric acid (UA) at a CdTe quantum dot (QD) modified the glassy carbon electrode (GCE). CdTe QDs, as new semiconductor nanocrystals, can greatly improve the peak current of UA. The anodic peak current of UA was linear with its concentration between 1.0×10(-6) and 4.0×10(-4) M in 0.1 M pH 5.0 phosphate buffer solution. The LOD for UA at the CdTe electrode (1.0×10(-7) M) was superior to that of the GCE. In addition, we also determined the effects of scan rate, pH, and interferences of UA for the voltammetric behavior and detection. The results indicated that modified electrode possessed excellent reproducibility and stability. Finally, a new and efficient electrochemical sensor for detecting UA was developed.

Pulsed polarimetry progress on the LANL MSX magnetized shock experiment

Science.gov (United States)

Smith, R. J.; Intrator, T. P.; Weber, T. E.; Hutchinson, T. M.; Boguski, J. C.

2013-10-01

The UW pulsed polarimeter is a Lidar Thomson scattering diagnostic that can also provide measurements of the internal distribution of B| | as well as ne and Te for Magnetized High Energy Density targets with cm resolution. Scattering has now been observed in MSX and mirror issues that interrupted the last campaign have been corrected. Subsidiary diagnostics are being developed along side to aid in calibration. Fiber optic pulsed polarimetry is also being explored as both measurements can be performed simultaneously with the one instrument. The fiber sensing would allow measurements of modest fields using an internal cladded fiber. Progress in these directions will be presented. This work is supported by DOE Office of Fusion Energy Sciences.

Partial Pressures of Te2 and Thermodynamic Properties of Ga-Te System

Science.gov (United States)

Su, Ching-Hua; Curreri, Peter A. (Technical Monitor)

2001-01-01

The partial pressures of Te2 in equilibrium with Ga(1-x)Te(x) samples were measured by optical absorption technique from 450 to 1100 C for compositions, x, between 0.333 and 0.612. To establish the relationship between the partial pressure of Te, and the measured optical absorbance, the calibration runs of a pure Te sample were also conducted to determine the Beer's Law constants. The partial pressures of Te2 in equilibrium with the GaTe(s) and Ga2Te3(s)compounds, or the so-called three-phase curves, were established. These partial pressure data imply the existence of the Ga3Te4(s) compound. From the partial pressures of Te2 over the Ga-Te melts, partial molar enthalpy and entropy of mixing for Te were derived and they agree reasonable well with the published data. The activities of Te in the Ga-Te melts were also derived from the measured partial pressures of Te2. These data agree well with most of the previous results. The possible reason for the high activity of Te measured for x less than 0.60 is discussed.

Switching of localized surface plasmon resonance of gold nanoparticles on a GeSbTe film mediated by nanoscale phase change and modification of surface morphology

Energy Technology Data Exchange (ETDEWEB)

Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Saiki, T. [Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223-8522 (Japan)

2013-12-09

As a platform for active nanophotonics, localized surface plasmon resonance (LSPR) switching via interaction with a chalcogenide phase change material (GeSbTe) was investigated. We performed single-particle spectroscopy of gold nanoparticles placed on a GeSbTe thin film. By irradiation with a femtosecond pulsed laser for amorphization and a continuous wave laser for crystallization, significant switching behavior of the LSPR band due to the interaction of GeSbTe was observed. The switching mechanism was explained in terms of both a change in the refractive index and a modification of surface morphology accompanying volume expansion and reduction of GeSbTe.

Electrically induced phase transition in GeSbTe alloys

Energy Technology Data Exchange (ETDEWEB)

Bruns, Gunnar; Schlockermann, Carl; Woda, Michael; Wuttig, Matthias [I. Physikalisches Institut Ia, RWTH Aachen, 52056 Aachen (Germany)

2008-07-01

While phase change materials have already successfully been applied in rewriteable optical data storage, they are now also promising to form the basis for novel non-volatile electrical data storage devices. To understand the physical concepts of these so-called Phase Change Random Access Memory (PCRAM) it is mandatory to gain a deeper insight into the switching process between the highly resistive amorphous and the lowly resistive crystalline phase. The fast phase transitions between the amorphous and crystalline state of GeSbTe-based alloys has so far often been studied using pulsed laser irradiation. In this work an alternative approach is employed to investigate this transition. Electrical pulses are used to rapidly and reversibly switch between the two states. For these experiments a setup was built with a specially designed contacting circuit board to meet the requirements of electrical measurements on a nanosecond timescale. The influence of the pulse parameters on the change of device resistance was determined for different initial states. Furthermore the high time resolution of 0.4 ns allows investigation of transient electrical effects like the so-called threshold switching first described by Ovshinsky in the late 1960s.

Electrically induced phase transition in GeSbTe alloys

International Nuclear Information System (INIS)

Bruns, Gunnar; Schlockermann, Carl; Woda, Michael; Wuttig, Matthias

2008-01-01

While phase change materials have already successfully been applied in rewriteable optical data storage, they are now also promising to form the basis for novel non-volatile electrical data storage devices. To understand the physical concepts of these so-called Phase Change Random Access Memory (PCRAM) it is mandatory to gain a deeper insight into the switching process between the highly resistive amorphous and the lowly resistive crystalline phase. The fast phase transitions between the amorphous and crystalline state of GeSbTe-based alloys has so far often been studied using pulsed laser irradiation. In this work an alternative approach is employed to investigate this transition. Electrical pulses are used to rapidly and reversibly switch between the two states. For these experiments a setup was built with a specially designed contacting circuit board to meet the requirements of electrical measurements on a nanosecond timescale. The influence of the pulse parameters on the change of device resistance was determined for different initial states. Furthermore the high time resolution of 0.4 ns allows investigation of transient electrical effects like the so-called threshold switching first described by Ovshinsky in the late 1960s

Infrared and near infrared emission spectra of TeH and TeD

Science.gov (United States)

Yu, Shanshan; Shayesteh, Alireza; Fu, Dejian; Bernath, Peter F.

2005-04-01

The vibration-rotation emission spectra for the X2Π ground state and the near infrared emission spectra of the X2Π 1/2- X2Π 3/2 system of the TeH and TeD free radicals have been measured at high resolution using a Fourier transform spectrometer. TeH and TeD were generated in a tube furnace with a DC discharge of a flowing mixture of argon, hydrogen (or deuterium), and tellurium vapor. In the infrared region, for the X2Π 3/2 spin component we observed the 1-0, 2-1, and 3-2 vibrational bands for most of the eight isotopologues of TeH and the 1-0 and 2-1 bands for three isotopologues of TeD. For the X2Π 1/2- X2Π 3/2 transition, we observed the 0-0 and 1-1 bands for TeH and the 0-0, 1-1, and 2-2 bands for TeD. Except for a few lines, the tellurium isotopic shift was not resolved for the X2Π 1/2- X2Π 3/2 transitions of TeH and TeD. Local perturbations with Δ v = 2 between the two spin components of the X2Π state of TeH were found: X2Π 1/2, v = 0 with X2Π 3/2, v = 2; X2Π 1/2, v = 1 with X2Π 3/2, v = 3. The new data were combined with the previous data from the literature and two kinds of fits (Hund's case (a) and Hund's case (c)) were carried out for each of the 10 observed isotopologues: 130TeD, 128TeD, 126TeD, 130TeH, 128TeH, 126TeH, 125TeH, 124TeH, 123TeH, and 122TeH.

Local polarization phenomena in In-doped CdTe x-ray detector arrays

International Nuclear Information System (INIS)

Sato, Toshiyuki; Sato, Kenji; Ishida, Shinichiro; Kiri, Motosada; Hirooka, Megumi; Yamada, Masayoshi; Kanamori, Hitoshi

1995-01-01

Local polarization phenomena have been studied in detector arrays with the detector element size of 500 microm x 500 microm, which are fabricated from high-resistivity In-doped CdTe crystals grown by the vertical Bridgman technique. It has been found for the first time that a polarization effect, which is characterized by a progressive decrease of the pulse counting rate with increasing photon fluence, strongly depends on the detector elements, that is, the portion of crystals used. The influence of several parameters, such as the applied electric field strength, time, and temperature, on this local polarization effect is also investigated. From the photoluminescence measurements of the inhomogeneity of In dopant, it is concluded that the local polarization effect observed here originates from a deep level associated with In dopant in CdTe crystals

Characteristics of laser irradiated Hg sub 0 ,835 Cd sub 0 ,165 Te analysed by resonant Raman spectroscopy

International Nuclear Information System (INIS)

Scepanovic, M.; Jevtic, M.

1998-01-01

The characteristics of Hg sub 0 ,835 Cd sub 0 ,165 Te sample irradiated by a nanosecond Nd: YAG laser pulse are investigated using a resonant Raman spectroscopy. The pulse energy density of 100 mJ/cm sup 2 is close to the energy threshold of material melting under the irradiated conditions. The presented Raman spectra of the unirradiated and irradiated sample parts point out that the laser irradiation induced a little concentration change in the surface sample layers without the essential structural changes (author)

Ti-Sb-Te alloy: a candidate for fast and long-life phase-change memory.

Science.gov (United States)

Xia, Mengjiao; Zhu, Min; Wang, Yuchan; Song, Zhitang; Rao, Feng; Wu, Liangcai; Cheng, Yan; Song, Sannian

2015-04-15

Phase-change memory (PCM) has great potential for numerous attractive applications on the premise of its high-device performances, which still need to be improved by employing a material with good overall phase-change properties. In respect to fast speed and high endurance, the Ti-Sb-Te alloy seems to be a promising candidate. Here, Ti-doped Sb2Te3 (TST) materials with different Ti concentrations have been systematically studied with the goal of finding the most suitable composition for PCM applications. The thermal stability of TST is improved dramatically with increasing Ti content. The small density change of T0.32Sb2Te3 (2.24%), further reduced to 1.37% for T0.56Sb2Te3, would greatly avoid the voids generated at phase-change layer/electrode interface in a PCM device. Meanwhile, the exponentially diminished grain size (from ∼200 nm to ∼12 nm), resulting from doping more and more Ti, enhances the adhesion between phase-change film and substrate. Tests of TST-based PCM cells have demonstrated a fast switching rate of ∼10 ns. Furthermore, because of the lower thermal conductivities of TST materials, compared with Sb2Te3-based PCM cells, T0.32Sb2Te3-based ones exhibit lower required pulse voltages for Reset operation, which largely decreases by ∼50% for T0.43Sb2Te3-based ones. Nevertheless, the operation voltages for T0.56Sb2Te3-based cells dramatically increase, which may be due to the phase separation after doping excessive Ti. Finally, considering the decreased resistance ratio, TixSb2Te3 alloy with x around 0.43 is proved to be a highly promising candidate for fast and long-life PCM applications.

Electrical properties of MIS devices on CdZnTe/HgCdTe

Science.gov (United States)

Lee, Tae-Seok; Jeoung, Y. T.; Kim, Hyun Kyu; Kim, Jae Mook; Song, Jinhan; Ann, S. Y.; Lee, Ji Y.; Kim, Young Hun; Kim, Sun-Ung; Park, Mann-Jang; Lee, S. D.; Suh, Sang-Hee

1998-10-01

In this paper, we report the capacitance-voltage (C-V) properties of metal-insulator-semiconductor (MIS) devices on CdTe/HgCdTe by the metalorganic chemical vapor deposition (MOCVD) and CdZnTe/HgCdTe by thermal evaporation. In MOCVD, CdTe layers are directly grown on HgCdTe using the metal organic sources of DMCd and DiPTe. HgCdTe layers are converted to n-type and the carrier concentration, ND is low 1015 cm-3 after Hg-vacancy annealing at 260 degrees Celsius. In thermal evaporation, CdZnTe passivation layers were deposited on HgCdTe surfaces after the surfaces were etched with 0.5 - 2.0% bromine in methanol solution. To investigate the electrical properties of the MIS devices, the C-V measurement is conducted at 80 K and 1 MHz. C-V curve of MIS devices on CdTe/HgCdTe by MOCVD has shown nearly flat band condition and large hysteresis, which is inferred to result from many defects in CdTe layer induced during Hg-vacancy annealing process. A negative flat band voltage (VFB approximately equals -2 V) and a small hysteresis have been observed for MIS devices on CdZnTe/HgCdTe by thermal evaporation. It is inferred that the negative flat band voltage results from residual Te4+ on the surface after etching with bromine in methanol solution.

Superconducting transition in TlBiTe/sub 2/ and TlTe compounds

Energy Technology Data Exchange (ETDEWEB)

Kantser, V G; Popovich, N S; Sidorenko, A S

1985-10-01

On the basis of zone structure calculation for TlBiTe/sub 2/ and TlTe it is found that TlBiTe/sub 2/ is a narrow-gap semiconductor and TlTe is a p-metal. At Tsub(c)=0.19 K TlTe is found to experience the superconducting transition. In TlBiTe/sub 2/ superconductivity is not observed to occur up to 0.05 K, since there is a possibility of occupying the high density of states zones because they are remote from actual ones. The earlier discovered superconducting transition in TlBiTe/sub 2/ is inherent in the alien phase of TlTe.

High-power rf pulse compression with SLED-II at SLAC

International Nuclear Information System (INIS)

Nantista, C.

1993-04-01

Increasing the peak rf power available from X-band microwave tubes by means of rf pulse compression is envisioned as a way of achieving the few-hundred-megawatt power levels needed to drive a next-generation linear collider with 50--100 MW klystrons. SLED-II is a method of pulse compression similar in principal to the SLED method currently in use on the SLC and the LEP injector linac. It utilizes low-los resonant delay lines in place of the storage cavities of the latter. This produces the added benefit of a flat-topped output pulse. At SLAC, we have designed and constructed a prototype SLED-II pulse-compression system which operates in the circular TE 01 mode. It includes a circular-guide 3-dB coupler and other novel components. Low-power and initial high-power tests have been made, yielding a peak power multiplication of 4.8 at an efficiency of 40%. The system will be used in providing power for structure tests in the ASTA (Accelerator Structures Test Area) bunker. An upgraded second prototype will have improved efficiency and will serve as a model for the pulse compression system of the NLCTA (Next Linear Collider Test Accelerator)

S and Te inter-diffusion in CdTe/CdS hetero junction

Energy Technology Data Exchange (ETDEWEB)

Enriquez, J. Pantoja [Cuerpo Academico-Energia y Sustentabilidad, Universidad Politecnica de Chiapas, Eduardo J. Selvas S/N, Col. Magisterial, Tuxtla Gutierrez 29010, Chiapas (Mexico); Gomez Barojas, E. [CIDS-ICUAP, Apdo. Postal 1651, 72000 Puebla (Mexico); Silva Gonzalez, R.; Pal, U. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Puebla (Mexico)

2007-09-22

Effects of post formation thermal annealing of the CdTe-CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of CdTe{sub 1-x}S{sub x} ternary compound at the CdTe-CdS interface. (author)

Thermodynamic characterization of Ni3TeO6, Ni2Te3O8 and NiTe2O5

Science.gov (United States)

Dawar, Rimpi; Babu, R.; Ananthasivan, K.; Anthonysamy, S.

2017-09-01

Measurement of vapour pressure of TeO2(g) over the biphasic mixture Ni3TeO6 (s) + NiO(s) in the temperature range 1143-1272 K was carried out using transpiration-thermogravimetric technique (TTG). Gibbs energy of formation of Ni3TeO6 was obtained from the temperature dependence of vapour pressure of TeO2 (g) generated by the incongruent vapourisation reaction, Ni3TeO6 (s) → NiO(s) + TeO2 (g) + 1/2 O2 in the temperature range 1143-1272 K. An isoperibol type drop calorimeter was used to measure the enthalpy increments of Ni3TeO6, Ni2Te3O8 and NiTe2O5. Thermodynamic functions viz., heat capacity, entropy and Gibbs energy functions of these compounds were derived from the experimentally measured enthalpy increment values. Third-law analysis was carried out to ascertain absence of temperature dependent systematic errors in the measurement of vapour pressure of TeO2 (g). A value of -1265.1 ± 1.5 kJ mol-1 was obtained for Δ Hf,298K o (Ni3TeO6) using third-law analysis.

Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

International Nuclear Information System (INIS)

Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

2003-01-01

The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

Effects of Ni and carbon-coated Ni addition on the thermoelectric properties of 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} base composites

Energy Technology Data Exchange (ETDEWEB)

Yoon, Sang Min; Dharmaiah, Peyala; Femi, Olu Emmanuel; Lee, Chul Hee; Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr

2017-07-01

In this paper, we report the effect of nickel (Ni) and carbon coated nickel (C-Ni) on the thermoelectric and mechanical properties of 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} (GA) base composites. Ni and C-Ni powders were synthesized using pulse wire evaporation and mixed with 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} in a planetary ball mill. The morphology of the Ni and C-Ni powders and GA + x (x = none, Ni, or C-Ni) composites were examined using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The thermoelectric properties of the GA + x (x = none, Ni, or C-Ni) composites shows that the addition of Ni increases the carrier concentration while the presence of C-Ni reduces the carrier concentration to a level comparable to the bare sample (x = 0). Subsequently, the Seebeck coefficient of the GA + C-Ni sample increases by about 18% more than in the bare sample. The thermal conductivity of the GA + Ni and GA + C-Ni samples was considerably lower at room temperature compared to the bare sample. The mechanical properties of the GA + Ni and GA + C-Ni composite samples show a three-fold improvement compared to the bare sample. - Highlights: • Ni and carbon-coated Ni nanoparticles were incorporated into 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} (BST) matrix. • Seebeck coefficient increased by 18% for BST/carbon coated Ni composites. • BST/carbon coated Ni composite reduces the thermal conductivity (21%). • The Vickers hardness of the BST/C-Ni composite samples significantly improved.

Designing Diameter-Modulated Heterostructure Nanowires of PbTe/Te by Controlled Dewetting.

Science.gov (United States)

Kumar, Abinash; Kundu, Subhajit; Samantaray, Debadarshini; Kundu, Paromita; Zanaga, Daniele; Bals, Sara; Ravishankar, N

2017-12-13

Heterostructures consisting of semiconductors with controlled morphology and interfaces find applications in many fields. A range of axial, radial, and diameter-modulated nanostructures have been synthesized primarily using vapor phase methods. Here, we present a simple wet chemical routine to synthesize heterostructures of PbTe/Te using Te nanowires as templates. A morphology evolution study for the formation of these heterostructures has been performed. On the basis of these control experiments, a pathway for the formation of these nanostructures is proposed. Reduction of a Pb precursor to Pb on Te nanowire templates followed by interdiffusion of Pb/Te leads to the formation of a thin shell of PbTe on the Te wires. Controlled dewetting of the thin shell leads to the formation of cube-shaped PbTe that is periodically arranged on the Te wires. Using control experiments, we show that different reactions parameters like rate of addition of the reducing agent, concentration of Pb precursor and thickness of initial Te nanowire play a critical role in controlling the spacing between the PbTe cubes on the Te wires. Using simple surface energy arguments, we propose a mechanism for the formation of the hybrid. The principles presented are general and can be exploited for the synthesis of other nanoscale heterostructures.

First observation of multi-pulse X-ray train via multi-collision laser Compton scattering

International Nuclear Information System (INIS)

Kuroda, R.; Toyokawa, H.; Yasumoto, M.; Ikeura-Sekiguchi, H.; Koike, M.; Yamada, K.; Yanagida, T.; Nakajyo, T.; Sakai, F.

2009-01-01

A compact hard X-ray source via laser Compton scattering (LCS) has been developed for biological and medical applications at the National Institute of Advanced Industrial Science and Technology (AIST) in Japan. The multi-collision LCS has been investigated in order to enhance the X-ray yields. The first observation of multi-pulse X-ray train with 6 pulses via the multi-collision LCS has been successfully demonstrated between the multi-bunch electron train with 6 bunches and the multi-pulse Ti:Sa laser train with 6 pulses. The 32 MeV electron train was generated from a Cs 2 Te photocathode rf gun with a multi-pulse UV laser and the S-band linac. The Ti:Sa laser train was obtained with the chirp pulse amplification (CPA) including the modified regenerative amplifier. The X-ray train with 6 pulses with 12.6 ns spacing was observed with the micro-channel plate (MCP). The maximum energy of the X-ray is analytically estimated to be about 24 keV and the total number of generated photons was calculated to be about 1.8x10 6 photons/train.

Comprehensive thermodynamic description of the quasiternary system PbTe-GeTe-SnTe

International Nuclear Information System (INIS)

Yashina, Lada V.; Leute, Volkmar; Shtanov, Vladimir I.; Schmidtke, Heinrich M.; Neudachina, Vera S.

2006-01-01

The equilibrium phase diagram of the quasiternary system PbTe-GeTe-SnTe was studied experimentally in the ranges of spinodal demixing and (solid + liquid) equilibrium by means of X-ray diffraction (XRD), electron microprobe analysis (EMA) and differential thermal analysis (DTA). A model description of the phase diagram was done on the base of composition dependent interaction parameters, which were determined for the solid and the liquid phases. The interaction parameters for the quasibinary systems were recalculated in order to reach better correlation between all experimental data. It was shown that the quasiternary phase diagram can be principally described using the interaction parameters for the quasibinary subsystems, but an additional ternary interaction parameter has also to be considered. The local structure of the quasiternary solid solution is described by a four-particle cluster model. Due to the tendency of the solid solution to demix, the probability of the (GeGeGe)Te cluster was found to be higher and that of the (PbGeGe)Te cluster to be lower than it is expected for the purely statistical distribution of the clusters

Desorption of Te capping layer from ZnTe (100): Auger spectroscopy ...

African Journals Online (AJOL)

... configurations of tellurium Te (c (2x2)) and Te (c (2x1)) are confirmed by scanning tunneling microscopy (STM). Such a study reveals a phase transition from a rich-Te to a poor-Te surface as the annealing temperature increases. Keywords: Zinc Tellure; solar cells; structural properties; optoelectronics; semiconductors.

Study of Te Inclusions in CdMnTe Crystals for Nuclear Detector Applications

International Nuclear Information System (INIS)

Babalola, O.S.; Bolotnikov, A.; Groza, M.; Hossain, A.; Egarievwe, S.; James, R.; Burger, A.

2009-01-01

The concentration, size and spatial distribution of Te inclusions in the bulk of CdMnTe crystals mined from two batches of ingots were studied. An isolated planar layer decorated with Te inclusions was identified in CdMnTe crystals from the second ingot. The internal electric field of a CMT crystal was probed by infrared (IR) imaging employing Pockels electro-optic effect. The effect of an isolated plane of Te inclusions on the internal electric-field distribution within the CdMnTe crystal was studied. Space charge accumulation around the plane of Te inclusions was observed, which was found to be higher when the detector was reverse-biased. The effects of the plane of Te inclusions on the electric-field distribution within the CdMnTe crystal, and the quality of CdMnTe crystals for nuclear detector applications are discussed.

Solution Grown Se/Te Nanowires: Nucleation, Evolution, and The Role of Triganol Te seeds

Directory of Open Access Journals (Sweden)

Shan Xudong

2009-01-01

Full Text Available Abstract We have studied the nucleation and growth of Se–Te nanowires (NWs, with different morphologies, grown by a chemical solution process. Through systematic characterization of the Se–Te NW morphology as a function of the Te nanocrystallines (NCs precursor, the relative ratio between Se and Te, and the growth time, a number of significant insights into Se–Te NW growth by chemical solution processes have been developed. Specifically, we have found that: (i the growth of Se–Te NWs can be initiated from either long or short triganol Te nanorods, (ii the frequency of proximal interactions between nanorod tips and the competition between Se and Te at the end of short Te nanorods results in V-shaped structures of Se–Te NWs, the ratio between Se and Te having great effect on the morphology of Se–Te NWs, (iii by using long Te nanorods as seeds, Se–Te NWs with straight morphology were obtained. Many of these findings on Se–Te NW growth can be further generalized and provide very useful information for the rational synthesis of group VI based semiconductor NW compounds.

Structural and superconducting properties of epitaxial Fe{sub 1+y}Se{sub 1-x}Te{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Richter, Stefan; Yuan, Feifei; Grinenko, Vadim; Huehne, Ruben [Institute for Metallic Materials, IFW Dresden (Germany); Sala, Alberto; Putti, Marina [Dipartimento di Fisica, Universita di Genova (Italy)

2015-07-01

The iron based superconductor Fe(Se,Te) is in the center of much ongoing research. The reason for this is on the one hand its simple crystal structure, that consists only of stacked Fe(Se,Te) layers so that structural and superconducting properties can be connected more easily, on the other hand FeSe itself shows a high sensibility for strain and changes in stoichiometry and can have potentially very high critical temperatures under hydrostatic pressure or in monolayers. We investigate epitaxial thin films of Fe{sub 1+y}Se{sub 1-x}Te{sub x} grown by pulsed laser deposition on different single crystalline substrates. A high crystalline quality and a superconducting transition of up to about 20 K can be achieved using optimized deposition parameters. The influence of growth conditions, Te-doping, film thickness and post growth oxygen treatment on the structural and superconducting properties on these films will be presented in detail.

CuGaTe2-CuAlTe2 system

International Nuclear Information System (INIS)

Bodnar', I.V.

2003-01-01

The results of studies on the chemical interaction in the CuGaTe 2 -CuAlTe 2 as well as on the thermal and optical properties of the formed solid solutions are presented. It is shown, that continuous number of solid solutions are formed in the CuGaTe 2 -CuAlTe 2 system, which crystallize in the chalcopyrite structure. The diagram of state of this system is plotted. The thermal expansion of these materials is studied through the dilatometric method. The linear dependence of the thermal expansion coefficient on the composition is established. The concentration dependences of the forbidden zone width diverge from the linearity [ru

76 FR 14054 - Notice of Inventory Completion: U.S. Department of the Interior, Bureau of Land Management, White...

Science.gov (United States)

2011-03-15

... Ute tribes. Also, the burial was located directly underneath a rock art panel that is consistent with the Early Ute Historic Style of rock art found in the region. Site 5RB699 dated Fremont and Ute... Southern Ute Reservation, Colorado; Standing Rock Sioux Tribe of North & South Dakota; Ute Indian Tribe of...

From thermoelectric bulk to nanomaterials: Current progress for Bi2Te3 and CoSb3

International Nuclear Information System (INIS)

Peranio, N.; Eibl, O.; Baessler, S.; Nielsch, K.; Klobes, B.; Hermann, R.P.; Daniel, M.; Albrecht, M.; Goerlitz, H.; Pacheco, V.; Bedoya-Martinez, N.; Hashibon, A.; Elsaesser, C.

2016-01-01

Bi 2 Te 3 and CoSb 3 based nanomaterials were synthesized and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi 15 Sb 29 Te 56 , and n-type Bi 38 Te 55 Se 7 nanowires with power factors comparable to nanostructured bulk materials were prepared by potential-pulsed electrochemical deposition in a nanostructured Al 2 O 3 matrix. p-type Sb 2 Te 3 , n-type Bi 2 Te 3 , and n-type CoSb 3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. This yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb 3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi 2 (Te 0.91 Se 0.09 ) 3 /SiC and (Bi 0.26 Sb 0.74 ) 2 Te 3 /SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, Moessbauer spectroscopy, and transmission electron microscopy. For Bi 2 Te 3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi 2 Te 3 and CoSb 3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoretical modeling were combined to assess and reduce ZT-limiting mechanisms in these materials. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Observation of Hercules X-1 at energies above 50 TeV

International Nuclear Information System (INIS)

Dingus, B.L.; Chang, C.Y.; Goodman, J.A.

1988-01-01

A search for emission from Hercules X-1 at energies above 50 TeV during the calendar period April 1986 to July 1987 yielded two significant bursts, on UT 24 July 1986. The events during these bursts were pulsed with a period of 1.2357 s, significantly different from estimates of the contemporaneous x-ray period. The probability that this represents random statistical fluctuations of the background is estimated to be 1/70000. The muon content of the burst events is anomalous when compared with expectations from gamma-ray showers. 11 refs., 1 fig

Study of Te Inclusion and Related Point Defects in THM-Growth CdMnTe Crystal

Science.gov (United States)

Mao, Yifei; Zhang, Jijun; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Ling, Liwen; Li, Ming; Zhang, Ying; Wang, Linjun

2018-02-01

This study establishes a model for describing the interaction between Te inclusions, dislocations and point defects in CdMnTe crystals. The role of the complex environment surrounding the formation of Te inclusions was analyzed. Images of Te inclusions captured by scanning electron microscope and infrared microscope were used to observe the morphology of Te inclusions. The morphology of Te inclusions is discussed in light of crystallography, from the crystal growth temperature at 900°C to the melting temperature of Te inclusions using the traveling heater method. The dislocation nets around Te inclusions were calculated by counting lattice mismatches between the Te inclusions and the bulk CdMnTe at 470°C. The point defects of Te antisites were found to be gathered around Te inclusions, with dislocation climb during the cooling phase of crystal growth from 470°C to room temperature. The Te inclusions, dislocation nets and surrounding point defects are considered to be an entirety for evaluating the effect of Te inclusions on CdMnTe detector performance, and an effective mobility-lifetime product (μτ) was obtained.

Investigations of portable cadmium telluride (CdTe(Cl)) detectors for clinical studies with radioactive indicators

International Nuclear Information System (INIS)

Bojsen, J.

1985-01-01

The combination of small, portable γ-radiation-sensitive Cadmium Telluride (CdTE(Cl)) crystal detectors and portable solid state data storage memories makes it feasible to extend the measuring period in a number of clinical investigations based on the use of various radioisotopes and external detection. Blood sampling can be avoided in some cases. Continuous ambulatory monitoring of relevant physiological parameters is practicable, e.g. kidney function (GFR), left ventricular ejection fraction, subcutaneous blood flow, muscle blood flow and insulin absorption in diabetic patients. In the present methodological study the applicability of the 133-Xe washout technique to subcutaneous (s.c.) adipose tissue blood flow (SBF) has been investigated and adapted to the use of CdTe(Cl) detectors attached to the skin surface for the measurement of local 133-Xe-disappearance rate constants (k). Physical characterization of CdTe(Cl) detectors as γ-sensitive devices has been performed, and adequate counting sensitivities were found without detector energy-resolution properties. The CdTe(Cl) detectors are therefore suitable for single indicator studies. The measuring geometry of CdTe(Cl) detectors was studied and compared with that of stationary Sodium Iodide (NaI(Tl)) detectors in both phantom and in vivo investigations. The spatial properties of CdTe(Cl) detectors could to some extent be adjusted by pulse height discrimination and lead collimation. When long-term measurements were complicated by for instance physical activity of the patients, the small CdTe(Cl) detectors in general showed equal or better performance than the heavy and voluminous NaI(Tl) detectors. The free movement of the ambulatory patient and the avoidance of cable connections to stationary data-collecting systems gave improved possibilities for measurements of the relevant parameters. From this point of view, portable CdTe(Cl) detectors must be considered an important advance for radioactivity studies in

Pulsar TeV Halos Explain the Diffuse TeV Excess Observed by Milagro.

Science.gov (United States)

Linden, Tim; Buckman, Benjamin J

2018-03-23

Milagro observations have found bright, diffuse TeV emission concentrated along the galactic plane of the Milky Way. The intensity and spectrum of this emission is difficult to explain with current models of hadronic γ-ray production, and has been named the "TeV excess." We show that TeV emission from pulsars naturally explains this excess. Recent observations have detected "TeV halos" surrounding pulsars that are either nearby or particularly luminous. Extrapolating this emission to the full population of Milky Way pulsars indicates that the ensemble of "subthreshold" sources necessarily produces bright TeV emission diffusively along the Milky Way plane. Models indicate that the TeV halo γ-ray flux exceeds that from hadronic γ rays above an energy of ∼500  GeV. Moreover, the spectrum and intensity of TeV halo emission naturally matches the TeV excess. Finally, we show that upcoming HAWC observations will resolve a significant fraction of the TeV excess into individual TeV halos, conclusively confirming, or ruling out, this model.

RHEED studies of MBE growth mechanisms of CdTe and CdMnTe

Energy Technology Data Exchange (ETDEWEB)

Waag, A.; Behr, T.; Litz, T.; Kuhn-Heinrich, B.; Hommel, D.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

1993-01-30

We report on reflection high energy electron diffraction (RHEED) studies of molecular beam epitaxy (MBE) growth of CdTe and CdMnTe on (100) oriented CdTe substrates. RHEED oscillations were measured for both the growth and desorption of CdTe and CdMnTe as a function of flux and temperature. For the first time, the influence of laser and electron irradiation on the growth rate, as well as desorption, of CdTe is studied in detail using RHEED oscillations. We found a very small effect on the growth rate as well as on the CdTe desorption rate. The growth rate of CdTe was determined for different temperatures and CdTe flux ratios. The obtained experimental results are compared with a kinetic growth model to get information on the underlying growth processes, taking into account the influence of a precursor by including surface diffusion. From the comparison between model and experimental results the sticking coefficients of Cd and Te are determined. The growth rate of CdMnTe increases with Mn flux. This dependence can be used to calibrate the Mn content during growth by comparing the growth rate of CdTe with the growth rate of CdMnTe. The change in growth rate has been correlated with Mn content via photoluminescence measurements. In addition, the sticking coefficient of Mn is derived by comparing experimental results with a kinetic growth model. For high manganese content a transition to three-dimensional growth occurs. (orig.).

Calculation of femtosecond pulse laser induced damage threshold for broadband antireflective microstructure arrays.

Science.gov (United States)

Jing, Xufeng; Shao, Jianda; Zhang, Junchao; Jin, Yunxia; He, Hongbo; Fan, Zhengxiu

2009-12-21

In order to more exactly predict femtosecond pulse laser induced damage threshold, an accurate theoretical model taking into account photoionization, avalanche ionization and decay of electrons is proposed by comparing respectively several combined ionization models with the published experimental measurements. In addition, the transmittance property and the near-field distribution of the 'moth eye' broadband antireflective microstructure directly patterned into the substrate material as a function of the surface structure period and groove depth are performed by a rigorous Fourier model method. It is found that the near-field distribution is strongly dependent on the periodicity of surface structure for TE polarization, but for TM wave it is insensitive to the period. What's more, the femtosecond pulse laser damage threshold of the surface microstructure on the pulse duration taking into account the local maximum electric field enhancement was calculated using the proposed relatively accurate theoretical ionization model. For the longer incident wavelength of 1064 nm, the weak linear damage threshold on the pulse duration is shown, but there is a surprising oscillation peak of breakdown threshold as a function of the pulse duration for the shorter incident wavelength of 532 nm.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

Energy Technology Data Exchange (ETDEWEB)

Barber, W.C., E-mail: william.barber@dxray.com [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Wessel, J.C. [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Nygard, E. [Interon AS, Asker (Norway); Iwanczyk, J.S. [DxRay, Inc., Northridge, CA (United States)

2015-06-01

-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including: the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half-maximum (FWHM) across the entire dynamic range, and a noise floor about 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Precipitation of Ag2Te in the thermoelectric material AgSbTe2

International Nuclear Information System (INIS)

Sugar, Joshua D.; Medlin, Douglas L.

2009-01-01

The microstructure of AgSbTe 2 , prepared by solidification, is investigated using electron microscopy. During solidification and thermal treatment, the material separates into a two-phase mixture of a rocksalt phase, which is Ag 22 Sb 28 Te 50 , and silver telluride, Ag 2 Te. Ag 2 Te formation results either from eutectic solidification (large lamellar structures), or by solid-state precipitation (fine-scale particles). The crystal structure of the AgSbTe 2 phase determined by electron diffraction is consistent with a rocksalt structure that has a disordered cation sublattice. A preferred crystallographic orientation relationship at the interface between the matrix and the low-temperature monoclinic Ag 2 Te phase is defined and discussed. This orientation relationship is observed for both second-phase morphologies. In both cases, the orientation relationship originates from a topotactic (cube-on-cube) alignment of the Te sublattices in the initially cubic Ag 2 Te and the matrix at elevated temperature. This Te sublattice alignment is retained as the Ag 2 Te undergoes a cubic-to-monoclinic transformation during cooling. This orientation relationship is observed for both second-phase morphologies.

Analysis of CdS/CdTe devices incorporating a ZnTe:Cu/Ti Contact

International Nuclear Information System (INIS)

Gessert, T.A.; Asher, S.; Johnston, S.; Young, M.; Dippo, P.; Corwine, C.

2007-01-01

High-performance CdS/CdTe photovoltaic devices can be produced using a ZnTe:Cu/Ti back contact deposited onto the CdTe layer. We observe that prolonged exposure of the ZnTe:Cu and Ti sputtering targets to an oxygen-containing plasma significantly reduces device open-circuit voltage and fill factor. High-resolution compositional analysis of these devices reveals that Cu concentration in the CdTe and CdS layers is lower for devices with poor performance. Capacitance-voltage analysis and related numerical simulations indicate that the net acceptor concentration in the CdTe is also lower for devices with poor performance. Photoluminescence analyses of the junction region reveal that the intensity of a luminescent peak associated with a defect complex involving interstitial Cu (Cu i ) and oxygen on Te (O Te ) is reduced in devices with poor performance. Combined with thermodynamic considerations, these results suggest that oxygen incorporation into the ZnTe:Cu sputtering target reduces the ability of sputtered ZnTe:Cu film to diffuse Cu into the CdTe

Liquidus surface of the triple reciprocal system PbTe+CdS↔PbS+CdTe

International Nuclear Information System (INIS)

Tomashik, Z.F.; Tomashik, V.N.

1987-01-01

Using differential-thermal and microstructural analyses and mathematical design interaction in PbTe-CdS system is studied. Liquidus surface of the triple reciprocal system PbTe+CdS↔PbS+CdTe is plotted. It is shown that PbTe-CdS system phase diagram is of eutectic type. Maximal solubility of CdS in PbTe attains 13 mol%, and of PbTe in CdS is not over 1 mol%. Projection of liquidus surface of the PbTe+CdS↔PbS+CdTe triple reciprocal system consists of two primary crystallization fields: CdTe x S 1-x and PbTe x S 1-x solid solutions separated by eutectic line

Phase diagram of SnTe-CdSe cross-section of SnTe+CdSe reversible SnSe+CdTe ternary reciprocal system

International Nuclear Information System (INIS)

Dubrovin, I.V.; Budennaya, L.D.; Mizetskaya, I.B.; Sharkina, Eh.V.

1986-01-01

Phase equilibrium diagram of SnTe-CdSe cross-section of Sn, Cd long Te, Se ternary reciprocal system is investigated using the methods of differential thermal, X-ray phase, and microstructural analyses. Maximum length of solid solutions on the base of SnTe corresponds to approximately 14 mol.% at 1050 K and approximately 3 mol.% of CdSe at 670 K. Region of solid solutions on the base of CdSe corresponds to less than 1 mol.% of SnTe at room temperature. SnTe-CdSe cross-section is not a quasibinar one. Equilibrium is shifted to the left in the SnTe+CdSe reversible SnSe+CdTe reciprocal system

Aardkastanje, onopvallend en te weinig om te eten

NARCIS (Netherlands)

Spruijt, T.

2010-01-01

Hij staat vanaf half juni volop in bloei, maar wordt door weinigen gezien. Hoewel een zoektocht op Google anders doet vermoeden, wordt hij niet meer gegeten. De Aardkastanje is daarvoor te onopvallend en te zeldzaam in Nederland. Toch is het een bijzondere schermbloem.

Thermoelectric PbTe thin film for superresolution optical data storage

International Nuclear Information System (INIS)

Lee, Hyun Seok; Cheong, Byung-ki; Lee, Taek Sung; Lee, Kyeong Seok; Kim, Won Mok; Lee, Jae Won; Cho, Sung Ho; Youl Huh, Joo

2004-01-01

To find its practical use in ultrahigh density optical data storage, superresolution (SR) technique needs a material that can render a high SR capability at no cost of durability against repeated readout and write. Thermoelectric materials appear to be promising candidates due to their capability of yielding phase-change-free thermo-optic changes. A feasibility study was carried out with PbTe for its large thermoelectric coefficient and high stability over a wide temperature range as a crystalline single phase. Under exposure to pulsed red light, the material was found to display positive, yet completely reversible changes of optical transmittance regardless of laser power, fulfilling basic requirements for SR readout and write. The material was also shown to have a high endurance against repeated static laser heating of up to 10 6 -10 7 cycles tested. A read only memory disk with a PbTe SR layer led to the carrier to noise ratio value of 47 dB at 3.5 mW for 0.25 μm pit; below the optical resolution limit (∼0.27 μm) of the tester

Optical phonons in PbTe/CdTe multilayer heterostructures

Energy Technology Data Exchange (ETDEWEB)

Novikova, N. N.; Yakovlev, V. A. [Russian Academy of Sciences, Institute for Spectroscopy (Russian Federation); Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Karczewski, G. [Polish Academy of Sciences, Institute of Physics (Poland); Aleshchenko, Yu. A.; Muratov, A. V.; Zavaritskaya, T. N.; Melnik, N. N. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

2015-05-15

The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

HgCdTe APD-based linear-mode photon counting components and ladar receivers

Science.gov (United States)

Jack, Michael; Wehner, Justin; Edwards, John; Chapman, George; Hall, Donald N. B.; Jacobson, Shane M.

2011-05-01

Linear mode photon counting (LMPC) provides significant advantages in comparison with Geiger Mode (GM) Photon Counting including absence of after-pulsing, nanosecond pulse to pulse temporal resolution and robust operation in the present of high density obscurants or variable reflectivity objects. For this reason Raytheon has developed and previously reported on unique linear mode photon counting components and modules based on combining advanced APDs and advanced high gain circuits. By using HgCdTe APDs we enable Poisson number preserving photon counting. A metric of photon counting technology is dark count rate and detection probability. In this paper we report on a performance breakthrough resulting from improvement in design, process and readout operation enabling >10x reduction in dark counts rate to ~10,000 cps and >104x reduction in surface dark current enabling long 10 ms integration times. Our analysis of key dark current contributors suggest that substantial further reduction in DCR to ~ 1/sec or less can be achieved by optimizing wavelength, operating voltage and temperature.

High mobility 2D electron gas in CdTe/CdMgTe heterostructures

International Nuclear Information System (INIS)

Karczewski, G.; Jaroszynski, J.; Kurowski, M.; Barcz, A.; Wojtowicz, T.; Kossut, J.

1997-01-01

We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd 1-y Mg y Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd 1-y Mg y Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10 5 cm 2 /(Vs). This is the highest mobility reported in wide-gap II-VI materials

Electrical properties of NiAs-type MnTe films with preferred crystallographic plane of (110)

Energy Technology Data Exchange (ETDEWEB)

Yang, L.; Wang, Z. H., E-mail: zhwang@imr.ac.cn; Zhang, Z. D. [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China)

2016-01-28

NiAs-type manganese telluride (MnTe) films with preferred crystallographic plane of (110) were prepared on Si/SiO{sub 2} substrates by pulsed laser deposition. X-ray diffraction (XRD) of the films was studied at different temperatures. The XRD peak of MnTe (110) films shifts to higher angle with decreasing temperature, showing the decrease of the lattice parameter. Resistivity of the films was studied in the temperature range of 2–350 K. The bump between 150 and 250 K was observed in the films, which may be related to the special s-d and p-d overlaps induced by the compressed lattice. The magnon drag effect near its Néel temperature T{sub N} and enlarged magnetic-elastic coupling below 100 K were observed and analyzed in details.

Cumulative effects of Te precipitates in CdZnTe radiation detectors

International Nuclear Information System (INIS)

Bolotnikov, A.E.; Camarda, G.S.; Carini, G.A.; Cui, Y.; Li, L.; James, R.B.

2007-01-01

High-quality radiation detector-grade CdZnTe material is free from large-scale defects, such as grain boundaries, twins, and large Te or Cd inclusions (>50 μm), although it usually contains high concentrations of uniformly distributed Te inclusions and precipitates, typically of ∼20-μm-diameter size or smaller. We address the effects of the small-size Te precipitates on charge collection in CZT detectors, the significance of which is not yet well characterized. The strong correlation that we earlier found between the high-resolution X-ray maps and IR images proved that even small Te precipitates can trap substantial fractions of charge from the electron cloud. In this work, we modeled the transport of an electron cloud across idealized CZT devices containing Te precipitates to demonstrate that their cumulative effect can explain the degradation of energy resolution and the detection efficiency losses observed in actual CZT devices. Due to lack of experimental data on how the Te precipitates interact with an electron cloud, we developed a simplified (phenomenological) model based on the geometrical aspects of the problem. Despite its simplicity, the model correctly reproduced many experimental facts and gave quantitative predictions on the extent to which the presence of Te precipitates and inclusions can be tolerated. The broadening of the electron cloud due to repulsion and diffusion is at the core of the problem, making even low concentrations of small precipitates important in the device's performance

Nonlinear absorption and transmission properties of Ge, Te and InAs using tuneable IR FEL

Energy Technology Data Exchange (ETDEWEB)

Amirmadhi, F.; Becker, K.; Brau, C.A. [Vanderbilt Univ., Nashville, TN (United States)

1995-12-31

Nonlinear absorption properties of Ge, Te and InAs are being investigated using the transmission of FEL optical pulses through these semiconductors (z-scan method). Wavelength, intensity and macropulse dependence are used to differentiate between two-photon and free-carrier absorption properties of these materials. Macropulse dependence is resolved by using a Pockles Cell to chop the 4-{mu}s macropulse down to 100 ns. Results of these experiments will be presented and discussed.

Digital signal processing for CdTe detectors using VXIbus data collection systems

Energy Technology Data Exchange (ETDEWEB)

Fukuda, Daiji; Takahashi, Hiroyuki; Kurahashi, Tomohiko; Iguchi, Tetsuo; Nakazawa, Masaharu

1996-07-01

Recently fast signal digitizing technique has been developed, and signal waveforms with very short time periods can be obtained. In this paper, we analyzed each measured pulse which was digitized by an apparatus of this kind, and tried to improve an energy resolution of a CdTe semiconductor detector. The result of the energy resolution for {sup 137}Cs 662 keV photopeak was 13 keV. Also, we developed a fast data collection system based on VXIbus standard, and the counting rate on this system was obtained about 50 counts per second. (author)

CdTe in photoconductive applications. Fast detector for metrology and X-ray imaging

International Nuclear Information System (INIS)

Cuzin, M.

1991-01-01

Operating as a photoconductor, the sensitivity and the impulse response of semi-insulating materials greatly depend on the excitation duration compared to electron and hole lifetimes. The requirement of ohmic contact is shortly discussed. Before developing picosecond measurements with integrated autocorrelation system, this paper explains high energy industrial tomographic application with large CdTe detectors (25x15x0.9 mm 3 ). The excitation is typically μs range. X-ray flash radiography, with 10 ns burst, is in an intermediate time domain where excitation is similar to electron life-time. In laser fusion experiment excitation is in the range of 50 ps and we develop photoconductive devices able to study very high speed X-ray emission time behaviour. Thin polycristalline MOCVD CdTe films with picosecond response are suitable to perform optical correlation measurements of single shot pulses with a very large bandwidth (- 50 GHz)

110GHz-500kW long-pulse gyrotron with built-in quasi-optical mode converter

International Nuclear Information System (INIS)

Sakamoto, Keishi; Kariya, Tsuyoshi; Hayashi, Ken-ichi.

1994-01-01

We have designed, fabricated, and tested a 110 GHz-500 kW long-pulse gyrotron. The gyrotron incorporates a quasi-optical mode converter which transforms the oscillation mode, TE 22,2 , into a Gaussian radiation beam. The adoption of a built-in mode converter enabled us to design the electron beam collector so as to be capable of tolerating a 2 MW heat load. Attention was also paid to designing the gyrotron cavity and output window so as to permit long-pulse operations. In an experiment, we observed a maximum output power of 550 kW and achieved 1.3 s operation at a power level of 410 kW. (author)

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

International Nuclear Information System (INIS)

Xiong Ka; Wang Weichao; Alshareef, Husam N; Gupta, Rahul P; Gnade, Bruce E; Cho, Kyeongjae; White, John B

2010-01-01

We investigate the electronic structures and stability for Ni/Bi 2 Te 3 , NiTe/Bi 2 Te 3 , Co/Bi 2 Te 3 and CoTe 2 /Bi 2 Te 3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi 2 Te 3 . The interface formation energy for Co/Bi 2 Te 3 interfaces is much lower than that of Ni/Bi 2 Te 3 interfaces. Furthermore, we found that NiTe on Bi 2 Te 3 is more stable than Ni, while the formation energies for Co and CoTe 2 on Bi 2 Te 3 are comparable.

Ga-Bi-Te system

International Nuclear Information System (INIS)

Rustamov, P.G.; Seidova, N.A.; Shakhbazov, M.G.; AN Azerbajdzhanskoj SSR, Baku. Inst. Neorganicheskoj i Fizicheskoj Khimii)

1976-01-01

To elucidate the nature of interaction in the system Ga-Bi-Te, a study has been made of sections GaTe-Bi 2 Te 3 , Ga 2 Te 3 -Bi, GaTe-Bi and Bi 2 Te 3 -Ga. The alloys have been prepared by direct melting of the components or their alloys with subsequent homogenizin.o annealing at 400 deg C. The study has been made by the methods of differential thermal, microstructural analysis and by microhardness measurements. On the basis of literature data and data obtained a projection of the liquidus surface of the phase diagram for the system Ga-Bi-Te has been constructed. In the ternary system there are 17 curves of monovariant equilibrium dividing the liquidus into 10 fields of primary crystallization of phases, 9 points of non-variant equilibrium of which 4 points are triple eutectics and 5 points are triple peritectics

A novel time-to-pulse height converter for fast-neutron time-of-flight techniques

International Nuclear Information System (INIS)

Christiansen, J.

1962-01-01

An electronic time-to-pulse height converter is described which uses a multiplicative method instead of the usual one of adding overlapping pulses. This is achieved by a coincidence of a linear sawtooth and a sharply clipped needle-pulse. The sawtooth is fed to the grid of a beam-deflecting tube (E80T) and the needle-pulse is applied to the deflecting plates and opens the tube only during a time-interval of about 5.10 -9 s. The plate gets a charge proportional to the time-difference between the start of the sawtooth and the needle pulse. The plate-pulse is stretched and amplified and its height represents a measurement of the time-difference. With this method we got a time resolution of 2τ = 7 x 10 -12 s with artificial pulses, 2τ = 3 x 10 -10 s with Co 60 γ-coincidences by using NE 102 plastic crystals and 2τ = 1.4 x 10 -9 s with 511-keV γ-coincidences using NaI(Te) crystals. The method was also used with pulsed beam techniques. In this case we got from the pulsing RF an 8-Mc, sharply-peaked pulse-sequence, which was fed to the E80T plates. We had a time-resolution of 2τ = 1.1 x 10 -9 s with 4-MeV neutrons using plastic crystals 0.7 in long. Normally the region of linear response was 30 ns but it was possible to go up to 120 ns. (author) [fr

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

KAUST Repository

Xiong, Ka; Wang, Weichao; Alshareef, Husam N.; Gupta, Rahul P.; White, John B.; Gnade, Bruce E.; Cho, Kyeongjae

2010-01-01

We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

KAUST Repository

Xiong, Ka

2010-03-04

We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

Fat-suppressed fast spin-echo mid-TE (TE[effective]=34) MR images: comparison with fast spin-echo T2-weighted images for the diagnosis of tears and anatomic variants of the glenoid labrum

Energy Technology Data Exchange (ETDEWEB)

Tuite, M J [Dept. of Radiology, Univ. of Wisconsin School of Medicine, Madison (United States); University of Wisconsin Hospital and Clinics, Dept. of Radiology, Madison, WI (United States); Shinners, T J; Hollister, M C [Dept. of Radiology, Univ. of Wisconsin School of Medicine, Madison (United States); Orwin, J F [Dept. of Orthopedic Surgery, University of Wisconsin School of Medicine, Madison (United States)

1999-12-01

Objective. To compare the sensitivity, specificity, and accuracy of fat-suppressed fast spin-echo (FSE) mid-TE (TE[effective]=34) images with fat-suppressed FSE T2-weighted images for the diagnosis of labral abnormalities.Design and patients. The study included 27 consecutive patients who had axial fat-suppressed FSE T2-weighted and fat-suppressed FSE mid-TE MR images, and had labral abnormalities diagnosed at arthroscopy. The acquisition time was about 5 min for each sequence, but the mid-TE sequence allowed a higher spatial resolution than the T2-weighted images (256 x 256 versus 256 x 192). Twenty-eight age-matched patients with arthroscopically normal labra were included as a control group. The labrum was graded on the MR images as normal or abnormal separately by two musculoskeletal radiologists who were masked to the history and arthroscopic results. The surgical findings were used as the gold standard for calculating the sensitivity, specificity, and accuracy for interpreting the correct location of a labral abnormality. The sensitivity, specificity, and accuracy for the two sequences were compared with a McNemar test, and significance defined as P<0.05.Results. For observer 1, the sensitivity for labral abnormalities was 0.59 on the T2-weighted images, and 0.78 on the mid-TE images (P=0.12). The specificity was 0.54 for the T2-weighted, and 0.64 for the mid-TE images (P=0.51). The accuracy was 0.56 for the T2-weighted, and 0.71 for the mid-TE images (P=0.08). For observer 2, the sensitivity/specificity/accuracy was 0.67/0.93/0.80 for the T2-weighted, and 0.70/0.86/0.78 for the mid-TE images (all P>0.5).Conclusion. In this small study there is no statistically significant difference for demonstrating labral abnormalities between FSE T2-weighted images, and higher-resolution fat-suppressed FSE mid-TE (TE[effective]=34) images obtained with a similar acquisition time. Although there was a general trend toward higher sensitivity and accuracy with the mid-TE

Characterization of Cr-doped Sb{sub 2}Te{sub 3} films and their application to phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Wang, Qing; Xia, Yangyang; Zheng, Yonghui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); University of the Chinese Academy of Sciences, Beijing, 100049 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Liu, Bo; Zhu, Min; Song, Sannian; Lv, Shilong; Cheng, Yan; Song, Zhitang; Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Huo, Ruru [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghaitech University, Shanghai, 200031 (China)

2015-08-15

Phase-change memory (PCM) is regarded as one of the most promising candidates for the next-generation nonvolatile memory. Its storage medium, phase-change material, has attracted continuous exploration. Along the traditional GeTe-Sb{sub 2}Te{sub 3} tie line, the binary compound Sb{sub 2}Te{sub 3} is a high-speed phase-change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb{sub 2}Te{sub 3}, called Cr-Sb{sub 2}Te{sub 3} (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb{sub 2}Te{sub 3} without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST{sub 1}0.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10-year data retention is 120.8 C, which indicates better thermal stability than GST and pure Sb{sub 2}Te{sub 3}. PCM cells based on CST{sub 1}0.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr-Sb{sub 2}Te{sub 3} with suitable composition is a promising novel phase-change material used for PCM with high speed and good thermal stability performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A Linux cluster for between-pulse magnetic equilibrium reconstructions and other processor bound analyses

International Nuclear Information System (INIS)

Peng, Q.; Groebner, R. J.; Lao, L. L.; Schachter, J.; Schissel, D. P.; Wade, M. R.

2001-01-01

A 12-processor Linux PC cluster has been installed to perform between-pulse magnetic equilibrium reconstructions during tokamak operations using the EFIT code written in FORTRAN. The MPICH package implementing message passing interface is employed by EFIT for data distribution and communication. The new system calculates equilibria eight times faster than the previous system yielding a complete equilibrium time history on a 25 ms time scale 4 min after the pulse ends. A graphical interface is provided for users to control the time resolution and the type of EFITs. The next analysis to benefit from the cluster is CERQUICK written in IDL for ion temperature profile analysis. The plan is to expand the cluster so that a full profile analysis (Te, Ti, ne, Vr, Zeff) can be made available between pulses, which lays the ground work for Kinetic EFIT and/or ONETWO power balance analyses

Time resolution improvement of Schottky CdTe PET detectors using digital signal processing

International Nuclear Information System (INIS)

Nakhostin, M.; Ishii, K.; Kikuchi, Y.; Matsuyama, S.; Yamazaki, H.; Torshabi, A. Esmaili

2009-01-01

We present the results of our study on the timing performance of Schottky CdTe PET detectors using the technique of digital signal processing. The coincidence signals between a CdTe detector (15x15x1 mm 3 ) and a fast liquid scintillator detector were digitized by a fast digital oscilloscope and analyzed. In the analysis, digital versions of the elements of timing circuits, including pulse shaper and time discriminator, were created and a digital implementation of the Amplitude and Rise-time Compensation (ARC) mode of timing was performed. Owing to a very fine adjustment of the parameters of timing measurement, a good time resolution of less than 9.9 ns (FWHM) at an energy threshold of 150 keV was achieved. In the next step, a new method of time pickoff for improvement of timing resolution without loss in the detection efficiency of CdTe detectors was examined. In the method, signals from a CdTe detector are grouped by their rise-times and different procedures of time pickoff are applied to the signals of each group. Then, the time pickoffs are synchronized by compensating the fixed time offset, caused by the different time pickoff procedures. This method leads to an improved time resolution of ∼7.2 ns (FWHM) at an energy threshold of as low as 150 keV. The methods presented in this work are computationally fast enough to be used for online processing of data in an actual PET system.

Piezoelectric effect in CdTe/CdMnTe and CdTe/CdZnTe quantum wells

International Nuclear Information System (INIS)

Andre, Regis

1994-01-01

Materials with zinc-blende type structure are piezoelectric: any strain along a polar axis generates an electrical polarisation. Strained quantum wells of cubic II-VI or III-V semiconductors, grown along [111] or [112] axis, exhibit a strong built-in piezo-electric field (100 kV/cm for 1% strains). Such structures are very promising for applications to optical modulation, but it is necessary to study first the physical properties of piezoelectric heterostructures before they can be used in optical devices. For this purpose, we have performed an optical study of strained CdTe/CdMnTe or CdTe/CdZnTe quantum wells coherently grown by molecular beam epitaxy on [111] or [112] oriented substrates. Effects of piezoelectric field on optical and electronic properties of quantum wells have been analyzed in terms of the envelop function model, taking into account the effects of biaxial strains for [hhk] growth axis. Moreover, we have proposed an original way of measuring piezoelectric field in strained quantum wells, and we have used this method to show that CdTe exhibits strong non-linearities for piezoelectric field versus strain. This effect has never been mentioned before. We have also performed measurements of the piezoelectric coefficient e14 under high hydrostatic pressure inducing strains up to 2%, which shows that part of the non-linear effect is a volume effect. We have also studied the effects of the piezoelectric field on excitons in quantum wells. The binding energy decreases slightly when the electric field increases, but the oscillator strength, for the fundamental transition, decreases dramatically with the overlap of the envelope wavefunctions of electrons and holes. We have performed a modelization of an exciton in a piezoelectric quantum well using two variational parameters. This model provides an accurate calculation of excitonic absorption. Our experimental and theoretical results are in very good agreement, without any fitting parameters, for a large

Growth and optical properties of CdTe quantum dots in ZnTe nanowires

Energy Technology Data Exchange (ETDEWEB)

Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

2011-09-12

We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

Electrical and optical properties of SnEuTe and SnSrTe films

Science.gov (United States)

Ishida, Akihiro; Tsuchiya, Takuro; Yamada, Tomohiro; Cao, Daoshe; Takaoka, Sadao; Rahim, Mohamed; Felder, Ferdinand; Zogg, Hans

2010-06-01

The SnTe, Sn1-xEuxTe and Sn1-xSrxTe (x<0.06) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1×1019 cm-3 with high mobility exceeding 2000 cm2/V s at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the Sn1-xEuxTe and Sn1-xSrxTe systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.

Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

International Nuclear Information System (INIS)

Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

2004-01-01

Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-resolution morphologic and ultrashort time-to-echo quantitative magnetic resonance imaging of the temporomandibular joint

Energy Technology Data Exchange (ETDEWEB)

Bae, Won C.; Chang, Eric Y.; Biswas, Reni; Statum, Sheronda; Chung, Christine B. [Veterans Administration San Diego Healthcare System, Department of Radiology, San Diego, CA (United States); University of California, San Diego, School of Medicine, Department of Radiology, San Diego, CA (United States); Tafur, Monica; Du, Jiang; Healey, Robert [University of California, San Diego, School of Medicine, Department of Radiology, San Diego, CA (United States); Kwack, Kyu-Sung [Ajou University Medical Center, Department of Radiology, Wonchon-dong, Yeongtong-gu, Gyeonggi-do, Suwon (Korea, Republic of)

2016-03-15

To implement high-resolution morphologic and quantitative magnetic resonance imaging (MRI) of the temporomandibular joint (TMJ) using ultrashort time-to-echo (UTE) techniques in cadavers and volunteers. This study was approved by the institutional review board. TMJs of cadavers and volunteers were imaged on a 3-T MR system. High-resolution morphologic and quantitative sequences using conventional and UTE techniques were performed in cadaveric TMJs. Morphologic and UTE quantitative sequences were performed in asymptomatic and symptomatic volunteers. Morphologic evaluation demonstrated the TMJ structures in open- and closed-mouth position. UTE techniques facilitated the visualization of the disc and fibrocartilage. Quantitative UTE MRI was successfully performed ex vivo and in vivo, reflecting the degree of degeneration. There was a difference in the mean UTE T2* values between asymptomatic and symptomatic volunteers. MRI evaluation of the TMJ using UTE techniques allows characterization of the internal structure and quantification of the MR properties of the disc. Quantitative UTE MRI can be performed in vivo with short scan times. (orig.)

Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

Science.gov (United States)

Moore, Andrew

Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of CdTe

Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques

Energy Technology Data Exchange (ETDEWEB)

Broitman, Esteban, E-mail: esbro@ifm.liu.se [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping (Sweden); Flores-Ruiz, Francisco J. [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping, Sweden and Centro de Investigación y de Estudios Avanzados del I.P.N., Unidad Querétaro, Querétaro 76230 (Mexico); Di Giulio, Massimo [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Gontad, Francisco; Lorusso, Antonella; Perrone, Alessio [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce, Italy and INFN-Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

2016-03-15

In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in θ-2θ geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale.

The three-dimensional particle-in-cell simulation analysis of cavity of high power subterahertz pulsed gyrotron

International Nuclear Information System (INIS)

Ito, Koyu; Jiang, Weihua

2013-01-01

High power sub-terahertz pulsed gyrotrons for Collective Thomson Scattering (CTS) diagnostics of fusion plasmas are being developed. The typical target parameters are: output power of 100-200 kW, operation frequency of 300 GHz, and pulsed length > 10 us. In order to support experimental development, numerical simulations were carried out by using Particle-In-Cell (PIC) code MAGIC. The oscillation mode of the electromagnetic radiation was selected as TE_1_5_,_2, for which the beam parameters and cavity dimensions were determined accordingly. The simulation results have showed maximum power of 144 kW at oscillation frequency of 292.80 GHz, with oscillation efficiency of 22.15%. (author)

On the mean square displacements (MSD) of Hg and Te in HgTe

International Nuclear Information System (INIS)

Madhavan, Y.; Ramachandran, K.

1989-01-01

The mean square displacements (MSD) of Hg and Te in the perfect system of HgTe are worked out in the modified rigid ion model of Plumelle and Vandevyver. Also the MSD of Hg and Te neighbours around anion and cation vacancies in HgTe are worked out giving an active role for the vacancy following the theory of Maradudin et al. The results are compared with experimental values. (author)

M rate at TE. Monitoring at TeV energies

Energy Technology Data Exchange (ETDEWEB)

Dorner, Daniela [Universitaet Wuerzburg (Germany); Bretz, Thomas [RWTH Aachen (Germany); Gonzalez, Magdalena; Alfaro, Ruben [Universidad Nacional Autonoma de Mexico (Mexico); Tovmassian, Gagik [Instituto de Astronomia Sede Ensenada (Mexico)

2016-07-01

A dedicated long-term monitoring programm at TeV energies has been started by the FACT project about four years ago. Being limited to one site, gaps due to the rotation of the Earth remain in the measured light curves. This makes it difficult to study typical variability time scales of few hours to one day. To allow for systematic studies of continuous observations over up to 12 hours, a second telescope is being installed at a site in about six hours distance in longitude. For the M rate at TE (Monitoring at TeV energies) telescope, a mount from a previous experiment is being refurbished and will be equipped with a new camera. Using silicon based photo sensors like in FACT, an excellent and stable performance will be achieved. M rate at TE is a joint project of German and Mexican universities which aims at extending the blazar monitoring to so far unexplored time ranges. In the presentation, the status of this emerging project is reported.

Surface passivation of HgCdTe by CdZnTe and its characteristics

Science.gov (United States)

Lee, T. S.; Choi, K. K.; Jeoung, Y. T.; Kim, H. K.; Kim, J. M.; Kim, Y. H.; Chang, J. M.; Song, W. S.; Kim, S. U.; Park, M. J.; Lee, S. D.

1997-06-01

In this paper, we report the results of capacitance-voltage measurements conducted on several metal-insulator semiconductor (MIS) capacitors in which HgCdTe surfaces are treated with various surface etching and oxidation processes. CdZnTe passivation layers were deposited on HgCdTe surfaces by thermal evaporation after the surfaces were etched with 0.5-2.0% bromine in methanol solution, or thin oxide layers (tox ˜ few ten Å) were grown on the surfaces, in order to investigate effects of the surface treatments on the electrical properties of the surfaces, as determined from capacitance-voltage (C-V) measurements at 80K and 1 MHz. A negative flat band voltage has been observed for MIS capacitors fabricated after etching of HgCdTe surfaces with bromine in methanol solutions, which is reported to make the surface Te-rich. It is inferred that residual Te on the surface is a positive charge, Te4+. C-V characteristics for MIS capacitors fabricated on oxide surfaces grown by air-exposure and electrolytic process have shown large hysteresis effects, from which it is inferred that imperfect and electrically active oxide compounds and HgTe particles near the surface become slow interface states.

Precipitation of Ag{sub 2}Te in the thermoelectric material AgSbTe{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Sugar, Joshua D. [Materials Physics Department, Sandia National Laboratories, Livermore, CA (United States)], E-mail: jdsugar@sandia.gov; Medlin, Douglas L. [Materials Physics Department, Sandia National Laboratories, Livermore, CA (United States)

2009-06-10

The microstructure of AgSbTe{sub 2}, prepared by solidification, is investigated using electron microscopy. During solidification and thermal treatment, the material separates into a two-phase mixture of a rocksalt phase, which is Ag{sub 22}Sb{sub 28}Te{sub 50}, and silver telluride, Ag{sub 2}Te. Ag{sub 2}Te formation results either from eutectic solidification (large lamellar structures), or by solid-state precipitation (fine-scale particles). The crystal structure of the AgSbTe{sub 2} phase determined by electron diffraction is consistent with a rocksalt structure that has a disordered cation sublattice. A preferred crystallographic orientation relationship at the interface between the matrix and the low-temperature monoclinic Ag{sub 2}Te phase is defined and discussed. This orientation relationship is observed for both second-phase morphologies. In both cases, the orientation relationship originates from a topotactic (cube-on-cube) alignment of the Te sublattices in the initially cubic Ag{sub 2}Te and the matrix at elevated temperature. This Te sublattice alignment is retained as the Ag{sub 2}Te undergoes a cubic-to-monoclinic transformation during cooling. This orientation relationship is observed for both second-phase morphologies.

Broadband short pulse measurement by autocorrelation with a sum-frequency generation set-up

International Nuclear Information System (INIS)

Glotin, F.; Jaroszynski, D.; Marcouille, O.

1995-01-01

Previous spectral and laser pulse length measurements carried out on the CLIO FEL at wavelength λ=8.5 μm suggested that very short light pulses could be generated, about 500 fs wide (FWHM). For these measurements a Michelson interferometer with a Te crystal, as a non-linear detector, was used as a second order autocorrelation device. More recent measurements in similar conditions have confirmed that the laser pulses observed are indeed single: they are not followed by other pulses distant by the slippage length Nλ. As the single micropulse length is likely to depend on the slippage, more measurements at different wavelengths would be useful. This is not directly possible with our actual interferometer set-up, based on a phase-matched non-linear crystal. However, we can use the broadband non-linear medium provided by one of our users' experiments: Sum-Frequency Generation over surfaces. With such autocorrelation set-up, interference fringes are no more visible, but this is largely compensated by the frequency range provided. First tests at 8 μm have already been performed to validate the technic, leading to results similar to those obtained with our previous Michelson set-up

A Highly Sensitive Multi-Element HgCdTe E-APD Detector for IPDA Lidar Applications

Science.gov (United States)

Beck, Jeff; Welch, Terry; Mitra, Pradip; Reiff, Kirk; Sun, Xiaoli; Abshire, James

2014-01-01

An HgCdTe electron avalanche photodiode (e-APD) detector has been developed for lidar receivers, one application of which is integrated path differential absorption lidar measurements of such atmospheric trace gases as CO2 and CH4. The HgCdTe APD has a wide, visible to mid-wave-infrared, spectral response, high dynamic range, substantially improved sensitivity, and an expected improvement in operational lifetime. A demonstration sensor-chip assembly consisting of a 4.3 lm cutoff HgCdTe 4 9 4 APD detector array with 80 micrometer pitch pixels and a custom complementary metal-oxide-semiconductor readout integrated circuit was developed. For one typical array the APD gain was 654 at 12 V with corresponding gain normalized dark currents ranging from 1.2 fA to 3.2 fA. The 4 9 4 detector system was characterized at 77 K with a 1.55 micrometer wavelength, 1 microsecond wide, laser pulse. The measured unit gain detector photon conversion efficiency was 91.1%. At 11 V bias the mean measured APD gain at 77 K was 307.8 with sigma/mean uniformity of 1.23%. The average, noise-bandwidth normalized, system noise-equivalent power (NEP) was 1.04 fW/Hz(exp 1/2) with a sigma/mean of 3.8%. The measured, electronics-limited, bandwidth of 6.8 MHz was more than adequate for 1 microsecond pulse detection. The system had an NEP (3 MHz) of 0.4 fW/Hz(exp 1/2) at 12 V APD bias and a linear dynamic range close to 1000. A gain-independent quantum-limited SNR of 80% of full theoretical was indicative of a gain-independent excess noise factor very close to 1.0 and the expected APD mode quantum efficiency.

Selenium Se and tellurium Te

International Nuclear Information System (INIS)

Busev, A.I.; Tiptsova, V.G.; Ivanov, V.M.

1978-01-01

The basic methods for determining selenium and tellurium in various objects are presented. The bichromatometric determination of Te in cadmium, zinc and mercury tellurides is based on oxidation of Te(4) to (6) in H 2 SO 4 with potassium bichromate. In steels, Te is determined photometrically with the aid of KI. The determination is hindered by Fe(3), Cu(2), Bi(3) and Se(4) ions, which must be separated. The extraction-photometric determination of Te in native sulfur is carried out with the aid of 5-mercapto-3-(naphthyl-2)-1,3,4-thiadiazolthione-2 (pH=4.8-5.0). The dyed complex is readily extracted with chloroform and benzene. The spectrophotometric determination of Te in selenium is performed with the aid of 3,5-diphenylpyrazoline-1-dithiocarbamate of sodium. Te is determined in commercial indium, arsenic and their semiconductor compounds photometrically with the aid of copper diethyldithiocarbamate. The method permits determining 5x10 -5 % Te in a weighed amount of 0.5 g. The chloride complex of Te(4) with diantipyriodolpropylmethane is quantitatively extracted with dichloroethane from hydrochloric acid solutions. Thus, any amounts of Te can be separated from Se and determined photometrically. The extraction-photometric determination of Te in commercial lead and bismuth is carried out with the aid of pyrazolone derivatives, in commercial copper with the aid of diantipyridolpropylmethane, and in ores (more than 0.01% Te) with the aid of bismuthol 2. Also described is the extraction-polarographic determination of Te in sulfide ores

The gyroklystron as a possible RF source for future TeV colliders

International Nuclear Information System (INIS)

Cheng, J.; Lawson, W.; Calame, J.P.; Latham, P.E.; Granatstein, V.L.; Reiser, M.

1995-01-01

At the University of Maryland we have been investigating the feasibility of using gyroklystrons as a possible RF source for the next generation of linear colliders. The preliminary sets of fundamental and second harmonic gyroklystron tube experiments have achieved a combination of pulse length, frequency and peak powers beyond the previous state of the art in RF capabilities. Production of 1 μsec pulse lengths at X and K band frequencies have shown that gyroklystrons can be a promising RF source but the achieved power levels of 30 MW still fall short of predicted requirements for future TeV colliders. An upgrade of the gyroklystron experimental facility to achieve 100 MW peak power levels will move us closer to realizing the goals for RF sources. This paper will detail the past achievements of the 30 MW system as well as modifications for the future 100 MW system. copyright 1995 American Institute of Physics

Measurements on Prototype Inductive Adders with Ultra-Flat-Top Output Pulses for CLIC DR Kickers

CERN Document Server

Holma, J; Belver-Aguilar, C

2014-01-01

The CLIC study is investigating the technical feasibility of an electron-positron collider with high luminosity and a nominal centre-of-mass energy of 3 TeV. The CLIC pre-damping rings and damping rings (DRs) will produce ultra-low emittance beam with high bunch charge. To avoid beam emittance increase, the DR kicker systems must provide extremely flat, high-voltage, pulses. The specifications for the DR extraction kickers call for a 160 ns duration flat-top pulses of ±12.5 kV, 250 A, with a combined ripple and droop of not more than ±0.02 % (±2.5 V). An inductive adder is a very promising approach to meeting the specifications because this topology allows the use of both passive and analogue modulation methods to adjust the output waveform. Recently, two five-layer, 3.5 kV, prototype inductive adders have been built at CERN. The first of these has been used to test the passive and active analogue modulation methods to compensate voltage droop and ripple of the output pulses. Pulse waveforms have been reco...

Dynamical control of Mn spin-system cooling by photogenerated carriers in a (Zn,Mn)Se/BeTe heterostructure

Science.gov (United States)

Debus, J.; Maksimov, A. A.; Dunker, D.; Yakovlev, D. R.; Tartakovskii, I. I.; Waag, A.; Bayer, M.

2010-08-01

The magnetization dynamics of the Mn spin system in an undoped (Zn,Mn)Se/BeTe type-II quantum well was studied by a time-resolved pump-probe photoluminescence technique. The Mn spin temperature was evaluated from the giant Zeeman shift of the exciton line in an external magnetic field of 3 T. The relaxation dynamics of the Mn spin temperature to the equilibrium temperature of the phonon bath after the pump-laser-pulse heating can be accelerated by the presence of free electrons. These electrons, generated by a control laser pulse, mediate the spin and energy transfer from the Mn spin system to the lattice and bypass the relatively slow direct spin-lattice relaxation of the Mn ions.

Breast MRI at very short TE (minTE). Image analysis of minTE sequences on non-fat-saturated, subtracted T1-weighted images

Energy Technology Data Exchange (ETDEWEB)

Wenkel, Evelyn; Janka, Rolf; Kaemmerer, Nadine; Uder, Michael; Hammon, Matthias; Brand, Michael [Univ. Hospital Erlangen (Germany). Dept. of Radiology; Geppert, Christian [Siemens Healthcare GmbH, Erlangen (Germany); Hartmann, Arndt [Univ. Hospital Erlangen (Germany). Dept. of Pathology

2017-02-15

The aim was to evaluate a minimum echo time (minTE) protocol for breast magnetic resonance imaging (MRI) in patients with breast lesions compared to a standard TE (nTE) time protocol. Breasts of 144 women were examined with a 1.5 Tesla MRI scanner. Additionally to the standard gradient-echo sequence with nTE (4.8 ms), a variant with minimum TE (1.2 ms) was used in an interleaved fashion which leads to a better temporal resolution and should reduce the scan time by approximately 50%. Lesion sizes were measured and the signal-to-noise ratio (SNR) as well as the contrast-to-noise ratio (CNR) were calculated. Subjective confidence was evaluated using a 3-point scale before looking at the nTE sequences (1 = very sure that I can identify a lesion and classify it, 2 = quite sure that I can identify a lesion and classify it, 3 = definitely want to see nTE for final assessment) and the subjective image quality of all examinations was evaluated using a four-grade scale (1 = sharp, 2 = slight blur, 3 = moderate blur and 4 = severe blur/not evaluable) for lesion and skin sharpness. Lesion morphology and contrast enhancement were also evaluated. With minTE sequences, no lesion was rated with ''definitely want to see nTE sequences for final assessment''. The difference of the longitudinal and transverse diameter did not differ significantly (p>0.05). With minTE, lesions and skin were rated to be significantly more blurry (p<0.01 for lesions and p<0.05 for skin). There was no difference between both sequences with respect to SNR, CNR, lesion morphology, contrast enhancement and detection of multifocal disease. Dynamic breast MRI with a minTE protocol is feasible without a major loss of information (SNR, CNR, lesion morphology, contrast enhancement and lesion sizes) and the temporal resolution can be increased by a factor of 2 using minTE sequences.

Breast MRI at very short TE (minTE). Image analysis of minTE sequences on non-fat-saturated, subtracted T1-weighted images

International Nuclear Information System (INIS)

Wenkel, Evelyn; Janka, Rolf; Kaemmerer, Nadine; Uder, Michael; Hammon, Matthias; Brand, Michael; Hartmann, Arndt

2017-01-01

The aim was to evaluate a minimum echo time (minTE) protocol for breast magnetic resonance imaging (MRI) in patients with breast lesions compared to a standard TE (nTE) time protocol. Breasts of 144 women were examined with a 1.5 Tesla MRI scanner. Additionally to the standard gradient-echo sequence with nTE (4.8 ms), a variant with minimum TE (1.2 ms) was used in an interleaved fashion which leads to a better temporal resolution and should reduce the scan time by approximately 50%. Lesion sizes were measured and the signal-to-noise ratio (SNR) as well as the contrast-to-noise ratio (CNR) were calculated. Subjective confidence was evaluated using a 3-point scale before looking at the nTE sequences (1 = very sure that I can identify a lesion and classify it, 2 = quite sure that I can identify a lesion and classify it, 3 = definitely want to see nTE for final assessment) and the subjective image quality of all examinations was evaluated using a four-grade scale (1 = sharp, 2 = slight blur, 3 = moderate blur and 4 = severe blur/not evaluable) for lesion and skin sharpness. Lesion morphology and contrast enhancement were also evaluated. With minTE sequences, no lesion was rated with ''definitely want to see nTE sequences for final assessment''. The difference of the longitudinal and transverse diameter did not differ significantly (p>0.05). With minTE, lesions and skin were rated to be significantly more blurry (p<0.01 for lesions and p<0.05 for skin). There was no difference between both sequences with respect to SNR, CNR, lesion morphology, contrast enhancement and detection of multifocal disease. Dynamic breast MRI with a minTE protocol is feasible without a major loss of information (SNR, CNR, lesion morphology, contrast enhancement and lesion sizes) and the temporal resolution can be increased by a factor of 2 using minTE sequences.

Pogodba o mednarodnem franšizingu

OpenAIRE

Hafner, Neža

2016-01-01

V mednarodnem poslovanju so slovenski podjetniki vedno pogosteje udeleženi v franšiznih sistemih ameriških in evropskih podjetij. Njuno medsebojno sodelovanje odraža dogovor v obliki pogodbe o mednarodnem franšizingu. Pogodba je kompleksen pravni posel, ki ga slovenska zakonodaja posebej ne ureja in se je razvila iz poslovne prakse. V literaturi je zaslediti več različnih opredelitev pogodbe, zato je težko določiti njeno edinstveno definicijo. Franšizorji so običajno lastniki uspešnih, že ute...

Feasibility of three-dimensional ultrashort echo time magnetic resonance imaging at 1.5 T for the diagnosis of skull fractures

Energy Technology Data Exchange (ETDEWEB)

Wu, Hao; Zhong, Yu-min; Zhang, Hong; Lin, Yi; Zhu, Ming [Shanghai Jiao Tong University School of Medicine, Department of Radiology, Shanghai Children' s Medical Center, Shanghai (China); Nie, Quan-min; Guo, Lie-mei; Yang, Xi [Shanghai Jiao Tong University School of Medicine, Department of Neurosurgery Ren Ji Hospital, Shanghai (China); Chen, Wei-bo; Dai, Yong-ming [Philips Healthcare, Shanghai (China); Xu, Jian-rong [Shanghai Jiao Tong University School of Medicine, Department of Radiology, Ren Ji Hospital, Shanghai (China)

2016-01-15

To investigate the feasibility of ultrashort echo time (UTE) magnetic resonance imaging (MRI) for the diagnosis of skull fractures. The skull fracture models of ten Bama pigs and 364 patients with craniocerebral trauma were subjected to computed tomography (CT), UTE and conventional MRI sequences. The accuracy of UTE imaging in skull fracture diagnosis was analysed using receiver operating characteristic (ROC) curve analysis, McNemar's test and Kappa values. Differences among CT, UTE imaging and anatomical measurement (AM) values for linear fractures (LFs) and depressed fractures (DFs) were compared using one-way ANOVA and a paired-samples t-test. UTE imaging clearly demonstrated skull structures and fractures. The accuracy, validity and reliability of UTE MRI were excellent, with no significant differences between expert readings (P > 0.05; Kappa, 0.899). The values obtained for 42 LFs and 13 DFs in the ten specimens were not significantly different among CT, UTE MRI and AMs, while those obtained for 55 LFs and ten DFs in 44 patients were not significantly different between CT and UTE MRI (P > 0.05). UTE MRI sequences are feasible for the evaluation of skull structures and fractures, with no radiation exposure, particularly for paediatric and pregnant patients. (orig.)

Manipulation of Squeezed Two-Phonon Bound States using Femtosecond Laser Pulses

Directory of Open Access Journals (Sweden)

Nakamura Kazutaka G.

2013-03-01

Full Text Available Two-phonon bound states have been excited exclusively in ZnTe(110 via impulsive stimulated second-order Raman scattering, essentially being squeezed states due to phase coherent excitation of two identical components anticorrelated in the wave vector. By using coherent control technique with a pair of femtosecond laser pulses, the manipulation of squeezed states has been demonstrated in which both the amplitude and lifetime of coherent oscillations of squeezed states are modulated, indicating the feasibility to control the quantum noise and the quantum nature of phonon squeezed states, respectively.

The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy

Science.gov (United States)

Rodríguez-Fernández, Carlos; Manzano, Cristina V.; Romero, Aldo H.; Martín, Jaime; Martín-González, Marisol; Morais de Lima, Mauricio, Jr.; Cantarero, Andrés

2016-02-01

We unambiguously show that the signature of Te-rich bismuth telluride is the appearance of three new peaks in the Raman spectra of Bi2Te3, located at 88, 117 and 137 cm-1. For this purpose, we have grown stoichiometric Bi2Te3 nanowires as well as Te-rich nanowires. The absence of these peaks in stoichiometric nanowires, even in those with the smallest diameter, shows that they are not related to confinement effects or the lack of inversion symmetry, as stated in the literature, but to the existence of Te clusters. These Te clusters have been found in non-stoichiometric samples by high resolution electron microscopy, while they are absent in stoichiometric samples. The Raman spectra of the latter corresponds to the one for bulk Bi2Te3. The intensity of these Raman peaks are clearly correlated to the Te content. In order to ensure statistically meaningful results, we have investigated several regions from every sample.

AsTeRICS.

Science.gov (United States)

Drajsajtl, Tomáš; Struk, Petr; Bednárová, Alice

2013-01-01

AsTeRICS - "The Assistive Technology Rapid Integration & Construction Set" is a construction set for assistive technologies which can be adapted to the motor abilities of end-users. AsTeRICS allows access to different devices such as PCs, cell phones and smart home devices, with all of them integrated in a platform adapted as much as possible to each user. People with motor disabilities in the upper limbs, with no cognitive impairment, no perceptual limitations (neither visual nor auditory) and with basic skills in using technologies such as PCs, cell phones, electronic agendas, etc. have available a flexible and adaptable technology which enables them to access the Human-Machine-Interfaces (HMI) on the standard desktop and beyond. AsTeRICS provides graphical model design tools, a middleware and hardware support for the creation of tailored AT-solutions involving bioelectric signal acquisition, Brain-/Neural Computer Interfaces, Computer-Vision techniques and standardized actuator and device controls and allows combining several off-the-shelf AT-devices in every desired combination. Novel, end-user ready solutions can be created and adapted via a graphical editor without additional programming efforts. The AsTeRICS open-source framework provides resources for utilization and extension of the system to developers and researches. AsTeRICS was developed by the AsTeRICS project and was partially funded by EC.

Local atomic interdiffusion in CdTe/HgCdTe multilayered structures

International Nuclear Information System (INIS)

Kim, Y.; Ourmazd, A.; Feldman, R.D.; Rentschler, J.A.; Taylor, D.W.; Austin, R.F.

1989-01-01

The authors combine chemical lattice imaging with digital pattern recognition to study atomic interdiffusion at individual CdTe/HgCdTe interfaces in multi-quantum well structures. In this way they obtain quantitative composition profiles for as grown samples, and investigate their development as a function of annealing temperature. The authors' results indicate that interdiffusion depends on the position of the quantum well with respect to the surface, beginning first at quantum wells close to the surface, and proceeding towards the substrate. The authors' approach allows the quantification of interdiffusion as a function of time, temperature, and distance from the surface. The implications of these results for the stability of CdTe/HgCdTe structures, and the interpretation of X-ray data are discussed

Nano-pulsed laser irradiation scanning system for phase-change materials

International Nuclear Information System (INIS)

Kim, Sookyung; Li Xuezhe; Lee, Sangbin; Kim, Kyung-Ho; Lee, Seung-Yop

2008-01-01

Recently, the demand of a laser irradiation tester is increasing for phase change random access memory (PRAM) as well as conventional optical storage media. In this study, a nano-pulsed laser irradiation system is developed to characterize the optical property and writing performance of phase-change materials, based on a commercially available digital versatile disk (DVD) optical pick-up. The precisely controlled focusing and scanning on the material's surface are implemented using the auto-focusing mechanism and a voice coil motor (VCM) of the commercial DVD pick-up. The laser irradiation system provides various writing and reading functions such as adjustable laser power, pulse duration, recording pattern (spot, line and area), and writing/reading repetition, phase transition, and in situ reflectivity measurement before/after irradiation. Measurements of power time effect (PTE) diagram and reflectivity map of Ge 2 Sb 2 Te 5 samples show that the proposed laser irradiation system provides the powerful scanning tool to quantify the optical characteristics of phase-change materials

Simple one-pot aqueous synthesis of CdHgTe nanocrystals using sodium tellurite as the Te source

International Nuclear Information System (INIS)

Shen, Zhitao; Luo, Chunhua; Huang, Rong; Wang, Yiting; Peng, Hui; Travas-sejdic, Jadranka

2014-01-01

In this work, we systematically investigated the one-pot aqueous synthesis conditions of CdHgTe nanocrystals (NCs) using sodium tellurite (Na 2 TeO 3 ) as the Te source, and found that the added content of Hg 2+ and the initial pH value of reaction solutions significantly affected the photoluminescence quantum yield (PL QY) of alloyed CdHgTe NCs. When the concentration of Cd was 1.0 mmol L −1 , the mole ratio of Cd/Te/Hg/MPA was 1:0.5:0.05:2.4, and the initial pH value of the reaction solution was about 8.78, the PL QY of as-prepared CdHgTe NCs was up to 45%. Characterization by HRTEM and XRD confirmed the crystalline nature of CdHgTe NCs. Compared to other synthetic approaches of CdHgTe NCs, our experimental results indicate that Na 2 TeO 3 could be an attractive alternative Te source to directly synthesize CdHgTe NCs in aqueous media. - Highlights: • A one-pot method was developed for the synthesis of highly luminescent CdHgTe nanocrystals (NCs). • Sodium tellurite was used as the Te source. • The quantum yield reached up to 45%. • The experimental conditions were optimized and the prepared CdHgTe NCs were characterized

PharmTeX: a LaTeX-Based Open-Source Platform for Automated Reporting Workflow.

Science.gov (United States)

Rasmussen, Christian Hove; Smith, Mike K; Ito, Kaori; Sundararajan, Vijayakumar; Magnusson, Mats O; Niclas Jonsson, E; Fostvedt, Luke; Burger, Paula; McFadyen, Lynn; Tensfeldt, Thomas G; Nicholas, Timothy

2018-03-16

Every year, the pharmaceutical industry generates a large number of scientific reports related to drug research, development, and regulatory submissions. Many of these reports are created using text processing tools such as Microsoft Word. Given the large number of figures, tables, references, and other elements, this is often a tedious task involving hours of copying and pasting and substantial efforts in quality control (QC). In the present article, we present the LaTeX-based open-source reporting platform, PharmTeX, a community-based effort to make reporting simple, reproducible, and user-friendly. The PharmTeX creators put a substantial effort into simplifying the sometimes complex elements of LaTeX into user-friendly functions that rely on advanced LaTeX and Perl code running in the background. Using this setup makes LaTeX much more accessible for users with no prior LaTeX experience. A software collection was compiled for users not wanting to manually install the required software components. The PharmTeX templates allow for inclusion of tables directly from mathematical software output as well and figures from several formats. Code listings can be included directly from source. No previous experience and only a few hours of training are required to start writing reports using PharmTeX. PharmTeX significantly reduces the time required for creating a scientific report fully compliant with regulatory and industry expectations. QC is made much simpler, since there is a direct link between analysis output and report input. PharmTeX makes available to report authors the strengths of LaTeX document processing without the need for extensive training. Graphical Abstract ᅟ.

Excitons in tunnel coupled CdTe and (Cd,Mn)Te quantum wells

Energy Technology Data Exchange (ETDEWEB)

Terletskii, Oleg; Ryabchenko, Sergiy; Tereshchenko, Oleksandr [Institute of Physics NASU, pr. Nauki 46, 03680 Kyiv (Ukraine); Sugakov, Volodymyr; Vertsimakha, Ganna [Institute for Nuclear Research NASU, pr. Nauki 47, 03680 Kyiv (Ukraine); Karczewski, Grzegorz [Institute of Physics PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw (Poland)

2017-05-15

The photoluminescence (PL) from structures containing Cd{sub 0.95}Mn{sub 0.05}Te and CdTe quantum wells (QWs) separated by a narrow (1.94 nm) barrier was studied. The PL lines of comparable intensities from several possible exciton states were observed simultaneously at energy distances substantially exceeding kT. This means that the energy transfer in the studied systems is slower than the radiative recombination of the confined excitons. For the CdTe QW width of about 8.7-9 nm, indirect excitons with the electron and heavy hole chiefly localized in the CdTe and Cd{sub 1-x}Mn{sub x}Te QWs, respectively, were detected in the magnetic field. These indirect excitons have PL energy of about 10-20 meV above the PL line of the direct excitons in the CdTe QW. The observation of the PL from the indirect excitons which are not the lowest excitations in the structure is a distinctive feature of the system. Photoluminescence intensity dependence on the energy and the magnetic field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Investigations on the system Te/O/Br

International Nuclear Information System (INIS)

Oppermann, H.; Kunze, G.; Wolf, E.; Titov, V.A.; Kokovin, G.A.

1978-01-01

The melting point diagram of the system TeBr 4 -TeO 2 was obtained by total pressure measurements and DTA measurements. A congruent melting composition Te 6 O 11 Br 2 exists, the melting point is 570 0 C. The enthalpy of formation and the standard entropy of the species TeOBr 2 ,g was derived from measurements of the total pressure over Te 6 O 11 Br 2 /TeBr 4 and from the transport behaviour of the TeO 2 with Br 2 . From the decomposition-pressure measurements over Te 6 O 11 Br 2 /TeO 2 follow the partial pressures. The enthalpy of formation ΔH 0 (Te 6 O 11 Br 2 ,f,298) -453.5 kcal/Mol was obtained from the enthalpy of solution. The transport-behaviour of TeO 2 with HBr, TeBr 4 and Br 2 and that of Te 6 O 11 Br 2 is clear with the thermodynamic data of TeOBr 2 . (author)

New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

Energy Technology Data Exchange (ETDEWEB)

Kassem, M. [Univ. Picardie Jules Verne, F-80000 Amiens (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France); Boidin, R.; Bychkov, E. [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France)

2012-02-15

Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

Matrix-controlled morphology evolution of Te inclusions in CdZnTe single crystal

International Nuclear Information System (INIS)

He, Yihui; Jie, Wanqi; Xu, Yadong; Wang, Tao; Zha, Gangqiang; Yu, Pengfei; Zheng, Xin; Zhou, Yan; Liu, Hang

2012-01-01

The fine morphologies of microscale Te inclusions in CdZnTe single crystal were investigated to reveal their shape evolution. Such inclusions from crystal ingots with different post-growth cooling rates were analyzed using scanning electron microscopy after surface treatment. A tetrakaidecahedron model embodying {1 0 0} and {1 1 1} matrix facets was developed to interpret the form of the Te inclusions. An entire shape evolution process was also proposed where the final configuration of the Te inclusions was a tetrahedron comprising {1 1 1}B facets.

Evaluation of Tp-Te Interval and Tp-Te/QT Ratio in Patients with Coronary Slow Flow Tp-Te/QT Ratio and Coronary Slow Flow.

Science.gov (United States)

Tenekecioglu, Erhan; Karaagac, Kemal; Yontar, Osman Can; Agca, Fahriye Vatansever; Ozluk, Ozlem Arican; Tutuncu, Ahmet; Arslan, Burhan; Yilmaz, Mustafa

2015-06-01

Coronary slow flow (CSF) phenomenon is described by angiographically normal coronary arteries with delayed opacification of the distal vasculature. Several studies have suggested that the interval from the peak to the end of the electrocardiographic T wave (Tp-Te) may correspond to the transmural dispersion of the repolarization and that increased Tp-Te interval and Tp-Te/QT ratio are associated with malignant ventricular arrhythmias. The aim of this study was to evaluate the ventricular repolarization by using Tp-Te interval and Tp-Te/QT ratio in patients with CSF. This study included 50 CSF patients (40 male, mean age 48.6±12.5 years) and 40 control individuals (23 male, mean age 47.8±12.5 years). Tp-Te interval and Tp-Te/QT ratio were measured from the 12-lead electrocardiogram. These parameters were compared in groups. Baseline characteristics of the study groups were comparable. In electrocardiographic parameters analysis, QT and corrected QT were similar in CSF patients compared to the controls (357±35.2 vs 362±38.0 milliseconds and 419±25.8 vs 430±44.2 milliseconds, all p value >0.05). Tp-Te interval, Tp-Te/QT and Tp-Te/QTc ratio were significantly higher in CSF patients (85±13.7 vs 74±9.9 milliseconds and 0.24±0.03 vs 0.20±0.02 and 0.20±0.03 vs 0.17±0.02 all p value ratio are prolonged in patients with CSF.

Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

International Nuclear Information System (INIS)

Gu, Yaxu; Rong, Caicai; Xu, Yadong; Shen, Hao; Zha, Gangqiang; Wang, Ning; Lv, Haoyan; Li, Xinyi; Wei, Dengke; Jie, Wanqi

2015-01-01

Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

Structural and electric properties of AgGaTe{sub 2} layers prepared using mixed source of Ag{sub 2}Te and Ga{sub 2}Te{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Uruno, Aya [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Tokyo (Japan)

2017-01-15

AgGaTe{sub 2} layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag{sub 2}Te and Ga{sub 2}Te{sub 3}. Ag{sub 2}Te buffer layer deposition was introduced to eliminate melt-back etching. The effect of the molar ratio of Ag{sub 2}Te and Ga{sub 2}Te{sub 3} in the mixed source on the crystallinity of the AgGaTe{sub 2} layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag{sub 2}Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe{sub 2} layer with an abrupt interface between AgGaTe{sub 2} and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 x 10{sup 16} cm{sup -3}. A solar cell was fabricated using the p-AgGaTe{sub 2}/n-Si heterojunction, and exhibited a conversion efficiency of 1.15%. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

Energy Technology Data Exchange (ETDEWEB)

Matsumoto, M [Osaka Univ., Suita (Japan). Medical School; Kanamori, H; Toragaito, T; Taniguchi, A

1996-07-01

We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

X-ray diffraction study of epitaxial heterostructures of II-VI CdTe and ZnTe semiconductors; Etude par diffraction de rayons X d`heterostructures epitaxiees a base des semi-conducteurs II-VI CdTe et ZnTe

Energy Technology Data Exchange (ETDEWEB)

Bouchet-Boudet, N.

1996-10-07

This work deals with the structural study of II-VI semiconductor (CdTe and ZnTe) heterostructures by X-ray diffraction and reflectivity. These heterostructures have a high lattice parameter misfit and are grown by Molecular Beam Epitaxy. Two main subjects are developed: the characterization of ZnTe wires, grown by step propagation on a CdTe (001) vicinal surface, and the study of the vertical correlations in Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattices and superlattices made of ZnTe fractional layers spaced by CdTe. The growth of organised system is up to date; its aim is to realize quantum boxes (or wires) superlattices which are laterally and vertically ordered. The deformation along the growth axis induced by a ZnTe fractional layer inserted in a CdTe matrix is modelled, in the kinematical approximation, to reproduce the reflectivity measured around the substrate (004) Bragg peak. The lateral periodicity of the wires, deposited on a vicinal surface is a new and difficult subject. Some results are obtained on a vertical superlattice grown on a 1 deg. mis-cut surface. The in-plane and out-of-plane correlation lengths of a Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattice are deduced from the diffused scattered intensity measured at grazing incidence. The calculations are made within the `distorted Wave Born Approximation`. The vertical correlation in ZnTe boxes (or wines) superlattices can be measured around Bragg peaks. It is twice bigger in a superlattice grown on a 2 deg. mis-cut substrate than a nominal one. (author). 74 refs.

A new type of one-dimensional compound: Structure of Nb4(Te2)4Te4I

International Nuclear Information System (INIS)

Deng Shuiquan; Zhuang Honghui; Lu Canzhong; Huang Jinshun; Huang Jingling

1993-01-01

The new infinite-chain niobium telluride iodide has been prepared by reaction of the elements at 893 K. Nb 4 (Te 2 ) 4 Te 4 I represents a new one-dimensional structure type. The structure consists of [Nb 4 (Te 2 ) 4 Te 4 I] ∞ chains which are formed by the four-nuclear butterfly cluster units 'Nb 4 (Te 2 ) 4 Te 4 ' with the I atoms bridging between different cluster units. (orig.)

High thermoelectric potential of Bi{sub 2}Te{sub 3} alloyed GeTe-rich phases

Energy Technology Data Exchange (ETDEWEB)

Madar, Naor; Givon, Tom; Mogilyansky, Dmitry; Gelbstein, Yaniv [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel)

2016-07-21

In an attempt to reduce our reliance on fossil fuels, associated with severe environmental effects, the current research is focused on the identification of the thermoelectric potential of p-type (GeTe){sub 1−x}(Bi{sub 2}Te{sub 3}){sub x} alloys, with x values of up to 20%. Higher solubility limit of Bi{sub 2}Te{sub 3} in GeTe, than previously reported, was identified around ∼9%, extending the doping potential of GeTe by the Bi{sub 2}Te{sub 3} donor dopant, for an effective compensation of the high inherent hole concentration of GeTe toward thermoelectrically optimal values. Around the solubility limit of 9%, an electronic optimization resulted in an impressive maximal thermoelectric figure of merit, ZT, of ∼1.55 at ∼410 °C, which is one of the highest ever reported for any p-type GeTe-rich alloys. Beyond the solubility limit, a Fermi Level Pinning effect of stabilizing the Seebeck coefficient was observed in the x = 12%–17% range, leading to stabilization of the maximal ZTs over an extended temperature range; an effect that was associated with the potential of the governed highly symmetric Ge{sub 8}Bi{sub 2}Te{sub 11} and Ge{sub 4}Bi{sub 2}Te{sub 7} phases to create high valence band degeneracy with several bands and multiple hole pockets on the Fermi surface. At this compositional range, co-doping with additional dopants, creating shallow impurity levels (in contrast to the deep lying level created by Bi{sub 2}Te{sub 3}), was suggested for further electronic optimization of the thermoelectric properties.

Low-temperature sintering and microwave dielectric properties of Al2TeO6–TeO2 ceramics

International Nuclear Information System (INIS)

Kagomiya, Isao; Kodama, Yuichiro; Shimizu, Yukihiro; Kakimoto, Ken-ichi; Ohsato, Hitoshi; Miyauchi, Yasuharu

2015-01-01

Highlights: • This is the first study of dielectric properties of Al 2 TeO 6 –TeO 2 sintered at 900 °C. • The sintering at 900 °C contributed to densification, but it causes TeO 2 evaporation. • The annealing at 750 °C was effective for the further densification. • The both ε r and Q · f in the Al 2 TeO 6 –TeO 2 were improved with the annealing. - Abstract: We propose Al 2 TeO 6 –TeO 2 ceramics as a candidate for use as low-temperature co-fired ceramics (LTCC). We investigated microwave dielectric properties and low-temperature sintering conditions for Al 2 TeO 6 –TeO 2 ceramics. The calcined Al 2 TeO 6 powders were sintered at 900 °C for 2–10 h with 30–50 wt% additive TeO 2 . X-ray powder diffraction patterns showed that the sintered samples were Al 2 TeO 6 –TeO 2 composite with no other phase. The apparent density was improved with the additive TeO 2 content of up to 45 wt%. The dielectric constant (ε r ) increased by adding TeO 2 content from 35 to 45 wt%, although the quality factor (Q · f) decreased. During sintering at 900 °C, the ε r of the Al 2 TeO 6 –TeO 2 decreased slightly, whereas the Q · f increased gradually. The observed microstructures showed that the longer sintering time makes fewer pores in Al 2 TeO 6 –TeO 2 ceramics. Sintering at 900 °C for a long time contributes to densification, but it simultaneously causes TeO 2 evaporation. To prevent TeO 2 evaporation, we investigated the effects of annealing at 750 °C after sintering at 900 °C. Apparent densities or ε r for the annealed samples were higher than those of the non-annealed samples. The Q · f improved with increasing annealing duration time, suggesting that sintering proceeded well during annealing with slower TeO 2 evaporation at 750 °C. The results show that annealing at 750 °C is effective to facilitate sintering and to control TeO 2 evaporation

Molecular beam epitaxy of iodine-doped CdTe and (CdMg)Te

Energy Technology Data Exchange (ETDEWEB)

Fischer, F.; Waag, A.; Litz, Th.; Scholl, S.; Schmitt, M.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstofforschung, Stuttgart (Germany))

1994-08-01

The n-type doping of CdTe and (CdMg)Te by the use of the solid dopant source material ZnI[sub 2] is reported. Doping levels as high as 7x10[sup 18] cm[sup -3] have been obtained in CdTe with carrier mobilities around 500 cm[sup 2]/V[center dot]s at room temperature. For a dopant incorporation higher than 1x10[sup 19] cm[sup -3] the free carrier concentration decreases, indicating the onset of a compensation mechanism, which is observed in the case of chlorine and bromine doping, too. Preliminary experiments show that with increasing Mg concentration the free carrier concentration decreases. Nevertheless, CdMgTe with a magnesium concentration x=0.37 (band gap 2.2 eV at room temperature) can be doped up to 2x10[sup 17] cm[sup -3]. The existence of deep donor levels in this CdTe based ternary is not supposed to be the only reason for the reduction of the free carrier concentration. For high Mg support during molecular beam epitaxial (MBE) growth of wide gap (CdMg)Te layers, the ZnI[sub 2] incorporation is reduced, leading to low doping levels, too

Determination of K shell fluorescence cross-section and Kβ/Kα intensity ratios for Fe, Se, Te, FeSe, FeTe and TeSe

International Nuclear Information System (INIS)

Saydam, M.; Aksoy, C.; Cengiz, E.; Alaşalvar, C.; Tıraşoğlu, E.; Apaydın, G.

2012-01-01

The fluorescence cross-sections (σ Ki ) and the intensity ratios K β /K α for pure Fe, Se, Te elements and FeSe, FeTe, TeSe complexes have been investigated. The samples were excited by 59.5 keV γ-rays from 241 Am annular radioactive source and emitted X-rays. They were counted by an Ultra-LEGe detector with resolution of 150 eV at 5.9 keV. For pure elements results have been compared with the theoretical calculated values. According to our results band length and mutual interaction of atoms affected the results. We claimed that these effects would help researchers who study on superconductors, especially determining which compound can be show the superconductor properties. - Highlights: ► TeSe, FeSe and FeTe complexes have affected each other in terms of charge transfer. ► Fe excitement and enhancement have been made by Se and Te. ► Attractive interactions between electrons can help to becoming superconductivity.

Fabrication of Te and Te-Au Nanowires-Based Carbon Fiber Fabrics for Antibacterial Applications

Directory of Open Access Journals (Sweden)

Ting-Mao Chou

2016-02-01

Full Text Available Pathogenic bacteria that give rise to diseases every year remain a major health concern. In recent years, tellurium-based nanomaterials have been approved as new and efficient antibacterial agents. In this paper, we developed the approach to directly grow tellurium nanowires (Te NWs onto commercial carbon fiber fabrics and demonstrated their antibacterial activity. Those Te NWs can serve as templates and reducing agents for gold nanoparticles (Au NPs to deposit. Three different Te-Au NWs with varied concentration of Au NPs were synthesized and showed superior antibacterial activity and biocompability. These results indicate that the as-prepared carbon fiber fabrics with Te and Te-Au NWs can become antimicrobial clothing products in the near future.

Stratigraphy, landsnail faunas, and paleoenvironmental history of coastal dunefields at Te Werahi, northernmost New Zealand

International Nuclear Information System (INIS)

Brook, F.J.

1999-01-01

During Quaternary time, the history of the Te Werahi area included episodes of dunefield formation alternating with periods of extensive erosion of sand cover. Dune units of last interglacial age and older crop out as isolated erosional remnants within and adjacent to an extensive Holocene dunefield. The latter had begun to form by at least 4000 years BP, and dune mobilisation continued until about 1800 years BP, possibly with increased dune movement after 3000 years BP. A smaller Holocene dunefield on Motuopao Island also formed before about 1800 years BP. After 1800 years BP, the Te Werahi and Motuopao dunefields entered a stable phase that persisted until about 450 years BP, followed by dune remobilisation and erosion that has continued to the present day. Analysis of fossil landsnail faunas indicates that forest was widespread in the Te Werahi area in mid Holocene time, was mostly over-run by dunes by about 1900 years BP, and then locally re-established on the dunefield between about 1800 and 800 year BP. That dune forest was destroyed between 800 and 550 years BP, probably as a result of anthropic firing following Polynesian settlement, and has not subsequently re-established. Vegetation disturbance on the Te Werahi dunefield since at least 4000 years BP has resulted in cumulative extinctions and impoverishment of native landsnail faunas, especially during major extinction pulses before 1900 years BP and between 800 and 550 years BP. (author). 43 refs., 6 figs., 2 tabs

The tunneling spectra and superconducting gaps observed by using scanning tunneling microscope near the grain-boundary of FeSe0.3Te0.7 films

OpenAIRE

Lin, K. C.; Li, Y. S.; Shen, Y. T.; Wu, M. K.; Chi, C. C.

2013-01-01

We used STM to study the tunneling spectra of FeSe0.3Te0.7 films with two orientations of ab-planes and the connection ramp between them. We have discovered that, using pulse laser deposition (PLD) method, the a- and b-axis of the FeSe0.3Te0.7 film deposited on Ar-ion-milled Magnesium Oxide (MgO) substrate are rotated 45 degree with respect to those of MgO, while the a- and b-axis of the film grown on pristine MgO substrate are parallel to those of MgO. With photolithography and this techniqu...

Delineation of phase fields at the Te-rich end of the Ru Te binary system

Science.gov (United States)

Ali (Basu), M.; Bharadwaj, S. R.; Das, D.

2005-04-01

The tellurium rich side of the ruthenium-tellurium binary system was studied by differential thermal analysis. To avoid reported problems of Te loss by evaporation and reactive interference of Te to the thermocouples of the thermal analyzer, the present study made use of specially designed sealed quartz capsules as DTA containers. The thermal analyses were carried out over the compositional range of 0.66 ⩽ xTe ⩽ 1.00 with the help of SETARAM TG/DTA and other indigenously built thermal analyzers available in this laboratory. The thermal data generated for fifteen different compositions were interpreted for the nature of phase transitions occurring at their characteristic temperatures. The Ru-Te binary system was found to have a eutectic transformation at 444 °C at a composition of xTe = 0.918 and a monotectic transformation at 447 °C at a composition of xTe = 0.700. Up to 6 at.% Ru is soluble in Te at about 440 °C.

Delineation of phase fields at the Te-rich end of the Ru-Te binary system

International Nuclear Information System (INIS)

Ali, M.; Bharadwaj, S.R.; Das, D.

2005-01-01

The tellurium rich side of the ruthenium-tellurium binary system was studied by differential thermal analysis. To avoid reported problems of Te loss by evaporation and reactive interference of Te to the thermocouples of the thermal analyzer, the present study made use of specially designed sealed quartz capsules as DTA containers. The thermal analyses were carried out over the compositional range of 0.66 x Te 1.00 with the help of SETARAM TG/DTA and other indigenously built thermal analyzers available in this laboratory. The thermal data generated for fifteen different compositions were interpreted for the nature of phase transitions occurring at their characteristic temperatures. The Ru-Te binary system was found to have a eutectic transformation at 444 deg. C at a composition of x Te = 0.918 and a monotectic transformation at 447 deg. C at a composition of x Te = 0.700. Up to 6 at.% Ru is soluble in Te at about 440 deg. C

Ultrathin endoscopy versus high-resolution endoscopy for diagnosing superficial gastric neoplasia.

Science.gov (United States)

Toyoizumi, Hirobumi; Kaise, Mitsuru; Arakawa, Hiroshi; Yonezawa, Jin; Yoshida, Yukinaga; Kato, Masayuki; Yoshimura, Noboru; Goda, Ken-ichi; Tajiri, Hisao

2009-08-01

Ultrathin endoscopy (UTE) is an acceptable and cost-effective alternative to EGD with the patient under sedation, although the diagnostic accuracy of UTE is not well established. To compare the diagnostic accuracy of UTE and high-resolution endoscopy (HRE) for superficial gastric neoplasia. Prospective comparative study. Academic center. Patients with or without superficial gastric neoplasia underwent peroral UTE and HRE, back-to-back in a random order while under standard sedation. The procedures were performed by 2 endoscopists who were blinded to the clinical information. The rate of missed lesions and misdiagnosis, sensitivity, and specificity for the diagnosis of gastric neoplasia when using pathology as the reference standard. In total, 126 lesions (41 superficial gastric neoplasias, 85 nonneoplastic lesions) were recorded in 57 enrolled patients. For the diagnosis of gastric neoplasia, the sensitivity of UTE (58.5%) was significantly (P = .021) lower than that of HRE (78%), and the specificity of UTE (91.8%) was significantly (P = .014) lower than that of HRE (100%). The rate of missed lesions and misdiagnosis of gastric neoplasias when using UTE (41.5%) was significantly (P > .001) higher than that of HRE (22.0%). The corresponding rate of neoplasias at the proximal portion (fornix and corpus) when using UTE (29%) was significantly (P = .002) higher than that of HRE (7.2%), although the rates of neoplasias at the distal portion (angulus and antrum) were comparable for UTE and HRE. Small sample numbers in an enriched population. The diagnostic accuracy of UTE is significantly lower than that of HRE for superficial gastric neoplasia, and this difference is particularly striking for neoplasias in the proximal stomach. For UTE to be used as an alternative modality, improvements in optical quality and the incorporation of additional procedures, including close-range observations and chromoendoscopy, are required to enhance visualization.

Superstrengthening Bi2Te3 through Nanotwinning

Science.gov (United States)

Li, Guodong; Aydemir, Umut; Morozov, Sergey I.; Wood, Max; An, Qi; Zhai, Pengcheng; Zhang, Qingjie; Goddard, William A.; Snyder, G. Jeffrey

2017-08-01

Bismuth telluride (Bi2Te3 ) based thermoelectric (TE) materials have been commercialized successfully as solid-state power generators, but their low mechanical strength suggests that these materials may not be reliable for long-term use in TE devices. Here we use density functional theory to show that the ideal shear strength of Bi2Te3 can be significantly enhanced up to 215% by imposing nanoscale twins. We reveal that the origin of the low strength in single crystalline Bi2Te3 is the weak van der Waals interaction between the Te1 coupling two Te 1 - Bi - Te 2 - Bi - Te 1 five-layer quint substructures. However, we demonstrate here a surprising result that forming twin boundaries between the Te1 atoms of adjacent quints greatly strengthens the interaction between them, leading to a tripling of the ideal shear strength in nanotwinned Bi2Te3 (0.6 GPa) compared to that in the single crystalline material (0.19 GPa). This grain boundary engineering strategy opens a new pathway for designing robust Bi2Te3 TE semiconductors for high-performance TE devices.

Pulse pile-up. I: Short pulses

International Nuclear Information System (INIS)

Wilkinson, D.H.

1990-07-01

The search for rare large pulses against an intense background of smaller ones involves consideration of pulse pile-up. Approximate methods are presented, based on ruin theory, by which the probability of such pile-up may be estimated for pulses of arbitrary form and of arbitrary pulse-height distribution. These methods are checked against cases for which exact solutions are available. The present paper is concerned chiefly with short pulses of finite total duration. (Author) (5 refs., 24 figs.)

Quantification of neonatal lung parenchymal density via ultrashort echo time MRI with comparison to CT.

Science.gov (United States)

Higano, Nara S; Fleck, Robert J; Spielberg, David R; Walkup, Laura L; Hahn, Andrew D; Thomen, Robert P; Merhar, Stephanie L; Kingma, Paul S; Tkach, Jean A; Fain, Sean B; Woods, Jason C

2017-10-01

To demonstrate that ultrashort echo time (UTE) magnetic resonance imaging (MRI) can achieve computed tomography (CT)-like quantification of lung parenchyma in free-breathing, non-sedated neonates. Because infant CTs are used sparingly, parenchymal disease evaluation via UTE MRI has potential for translational impact. Two neonatal control cohorts without suspected pulmonary morbidities underwent either a research UTE MRI (n = 5; 1.5T) or a clinically-ordered CT (n = 9). Whole-lung means and anterior-posterior gradients of UTE-measured image intensity (arbitrary units, au, normalized to muscle) and CT-measured density (g/cm 3 ) were compared (Mann-Whitney U-test). Separately, a diseased neonatal cohort (n = 5) with various pulmonary morbidities underwent both UTE MRI and CT. UTE intensity and CT density were compared with Spearman correlations within ∼33 anatomically matched regions of interest (ROIs) in each diseased subject, spanning low- to high-density tissues. Radiological classifications were evaluated in all ROIs, with mean UTE intensities and CT densities compared in each classification. In control subjects, whole-lung UTE intensities (0.51 ± 0.04 au) were similar to CT densities (0.44 ± 0.09 g/cm 3 ) (P = 0.062), as were UTE (0.021 ± 0.020 au/cm) and CT (0.034 ± 0.024 [g/cm 3 ]/cm) anterior-posterior gradients (P = 0.351). In diseased subjects' ROIs, significant correlations were observed between UTE and CT (P ≤0.007 in each case). Relative differences between UTE and CT were small in all classifications (4-25%). These results demonstrate a strong association between UTE image intensity and CT density, both between whole-lung tissue in control patients and regional radiological pathologies in diseased patients. This indicates the potential for UTE MRI to longitudinally evaluate neonatal pulmonary disease and to provide visualization of pathologies similar to CT, without sedation/anesthesia or ionizing radiation

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

Science.gov (United States)

Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

2018-02-01

The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

High performance p-i-n CdTe and CdZnTe detectors

CERN Document Server

Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

1999-01-01

A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

Preparation and observation of an artifact-free Ge2Sb2Te5 TEM specimen by the small angle cleavage technique

International Nuclear Information System (INIS)

Kim, M.S.; Kim, H.G.

2006-01-01

The amorphous Ge 2 Sb 2 Te 5 thin film for the application to the non-volatile memory device was prepared by the pulsed laser deposition on a SiO2/Si substrate. The amorphous Ge 2 Sb 2 Te 5 which has the T C around 150 deg. C is readily crystallized when exposed to a comparable heat such as the Ar beam irradiation during the conventional ion milling process. Retaining its amorphous initial phase is important in order to precisely observe and understand the crystallization behaviour whether it be the sample for a pure materialistic research or applied into the device. To avoid such deterioration of the film's amorphous nature, the complete mechanical TEM specimen preparation which is called the small angle cleavage technique (SACT) was adopted to show thermally undisturbed, an artifact-free amorphous Ge 2 Sb 2 Te 5 TEM specimen. The two distinctive amorphous and crystalline phases has been observed by the HRTEM study

X-ray electron spectra of chalcogenide glasses and polycrystalline alloys of Ge-Te and As-Te systems

International Nuclear Information System (INIS)

Panus, V.R.

1990-01-01

Comparative investigation into structures of crystals and glasses in Ge-Te and As-Te two-component systems was conducted. Analysis of x-ray electron spectra of Ge-Te and As-Te systems indicates, that processes of dissociation-association resulting in formation of new structure units occur in telluride melts at synthesis temperatures. Structural chemical composition of binary glass-like alloys of Ge-Te and As-Te systems differs essentially from the one that corresponds to fusibility equilibrium curve. Oxygen doping into tellurium-base glasses results mainly in occurence of structures forecasted due to thermochemical calculation

Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

Energy Technology Data Exchange (ETDEWEB)

Pousset, J.; Farella, I.; Cola, A., E-mail: adriano.cola@le.imm.cnr.it [Institute for Microelectronics and Microsystems—Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy); Gambino, S. [Dipartimento di Matematica e Fisica “Ennio De Giorgi,” Università del Salento, Lecce I-73100 (Italy); CNR NANOTEC—Istituto di Nanotecnologia, Polo di Nanotecnologia c/o Campus Ecotekne, via Monteroni, 73100 Lecce (Italy)

2016-03-14

We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

International Nuclear Information System (INIS)

Pousset, J.; Farella, I.; Cola, A.; Gambino, S.

2016-01-01

We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

Defect characterization of CdTe thin films using a slow positron beam

International Nuclear Information System (INIS)

Neretina, S.; Grebennikov, D.; Mascher, P.; Hughes, R.A.; Weber, M.; Lynn, K.G.; Simpson, P.J.; Preston, J.S.

2007-01-01

Cadmium Telluride (CdTe) is the most well established II-VI compound largely due to its use as a photonic material. Existing applications, as well as those under consideration, are demanding increasingly stringent control of the material properties. The deposition of high quality thin films is of the utmost importance to such applications. In this regard, we present a report detailing the role of lattice mismatch in determining the film quality. Thin films were deposited on a wide variety of substrate materials using the pulsed laser deposition technique. Common to all substrates was the strong tendency towards the preferential alignment of CdTe's (111) planes parallel to the substrate's surface. X-ray diffraction analysis, however, revealed that the crystalline quality varied dramatically depending upon the substrate used with the best results yielding a single crystal film. This tendency also manifested itself in the surface morphology with higher structural perfection yielding smoother surfaces. Slow positron beam techniques revealed a strong correlation between the defect concentration and the degree of structural perfection. Simulations of the data using the POSTRAP 5 program were used to calculate the defect concentration in relative (atom -1 ) and absolute units and to determine the diffusion lengths of the positrons in the film. All of these characterization techniques point towards lattice mismatch as being the dominant mechanism in determining the quality of CdTe films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Spectral resolution and high-flux capability tradeoffs in CdTe detectors for clinical CT.

Science.gov (United States)

Hsieh, Scott S; Rajbhandary, Paurakh L; Pelc, Norbert J

2018-04-01

Photon-counting detectors using CdTe or CZT substrates are promising candidates for future CT systems but suffer from a number of nonidealities, including charge sharing and pulse pileup. By increasing the pixel size of the detector, the system can improve charge sharing characteristics at the expense of increasing pileup. The purpose of this work is to describe these considerations in the optimization of the detector pixel pitch. The transport of x rays through the CdTe substrate was simulated in a Monte Carlo fashion using GEANT4. Deposited energy was converted into charges distributed as a Gaussian function with size dependent on interaction depth to capture spreading from diffusion and Coulomb repulsion. The charges were then collected in a pixelated fashion. Pulse pileup was incorporated separately with Monte Carlo simulation. The Cramér-Rao lower bound (CRLB) of the measurement variance was numerically estimated for the basis material projections. Noise in these estimates was propagated into CT images. We simulated pixel pitches of 250, 350, and 450 microns and compared the results to a photon counting detector with pileup but otherwise ideal energy response and an ideal dual-energy system (80/140 kVp with tin filtration). The modeled CdTe thickness was 2 mm, the incident spectrum was 140 kVp and 500 mA, and the effective dead time was 67 ns. Charge summing circuitry was not modeled. We restricted our simulations to objects of uniform thickness and did not consider the potential advantage of smaller pixels at high spatial frequencies. At very high x-ray flux, pulse pileup dominates and small pixel sizes perform best. At low flux or for thick objects, charge sharing dominates and large pixel sizes perform best. At low flux and depending on the beam hardness, the CRLB of variance in basis material projections tasks can be 32%-55% higher with a 250 micron pixel pitch compared to a 450 micron pixel pitch. However, both are about four times worse in variance

Electric transport properties of the pentatelluride materials HfTe{sub 5} and ZrTe{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Tritt, T M; Wilson, M L; Littleton, R L [and others

1997-07-01

The authors have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe{sub 5} and ZrTe{sub 5}. They have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, T{sub p} where T{sub p} {approx} 80K for HfTe{sub 5} and T{sub p} {approx} 145K for ZrTe{sub 5}. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. These data are similar to behavior observed previously in these materials. They have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe{sub 5} and ZrTe{sub 5}. They have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 {micro}V/K and +65 {micro}V/K for HfTe{sub 5} and ZrTe{sub 5}, respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 {micro}V/K for HfTe{sub 5} and +35 {micro}V/K for ZrTe{sub 5}. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T {approx} 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 m{Omega}-cm and 24 m{Omega}-cm for HfTe{sub 5} and ZrTe{sub 5} respectively, compared to single crystal values of 0.35 m{Omega}-cm (HfTe{sub 5}) and 1.0 m{Omega}-cm (ZrTe{sub 5}). The authors have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. They will discuss these materials in relation to their potential as

Manufacturing Te/PEDOT Films for Thermoelectric Applications.

Science.gov (United States)

Culebras, Mario; Igual-Muñoz, Ana María; Rodríguez-Fernández, Carlos; Gómez-Gómez, María Isabel; Gómez, Clara; Cantarero, Andrés

2017-06-21

In this work, flexible Te films have been synthesized by electrochemical deposition using PEDOT [poly(3,4-ethylenedioxythiophene)] nanofilms as working electrodes. The Te electrodeposition time was varied to find the best thermoelectric properties of the Te/PEDOT double layers. To show the high quality of the Te films grown on PEDOT, the samples were analyzed by Raman spectroscopy, showing the three Raman active modes of Te: E 1 , A 1 , and E 2 . The X-ray diffraction spectra also confirmed the presence of crystalline Te on top of the PEDOT films. The morphology of the Te/PEDOT films was studied using scanning electron microscopy, showing a homogeneous distribution of Te along the film. Also an atomic force microscope was used to analyze the quality of the Te surface. Finally, the electrical conductivity and the Seebeck coefficient of the Te/PEDOT films were measured as a function of the Te deposition time. The films showed an excellent thermoelectric behavior, giving a maximum power factor of about 320 ± 16 μW m -1 K -2 after 2.5 h of Te electrochemical deposition, a value larger than that reported for thin films of Te. Qualitative arguments to explain this behavior are given in the discussion.

Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

2013-09-03

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

Lifetime Studies of Cs2Te Cathodes at the Phin RF Photoinjector at CERN

CERN Document Server

Hessler, C; Divall Csatari, M; Doebert, S; Fedosseev, V

2012-01-01

The PHIN photoinjector has been developed to study the feasibility of a photoinjector option for the CLIC (Compact LInear Collider) drive beam as an alternative to the baseline design, using a thermionic gun. The CLIC drive beam requires a high charge of 8.4 nC per bunch in 0.14 ms long trains, with 2 ns bunch spacing and 50 Hz macro pulse repetition rate, which corresponds to a total charge per macro pulse of 0.59 mC. This means unusually high peak and average currents for photoinjectors and is challenging concerning the cathode lifetime. In this paper detailed studies of the lifetime of Cs2Te cathodes, produced by the co-evaporation technique, are presented with respect to bunch charge, train length and vacuum level. Furthermore, the impact of the train length and bunch charge on the vacuum level will be discussed and steps to extend the lifetime will be outlined.

Surface preparation effects on efficient indium-tin-oxide-CdTe and CdS-CdTe heterojunction solar cells

Science.gov (United States)

Werthen, J. G.; Fahrenbruch, A. L.; Bube, R. H.; Zesch, J. C.

1983-05-01

The effects of CdTe surface preparation and subsequent junction formation have been investigated through characterization of ITO/CdTe and CdS/CdTe heterojunction solar cells formed by electron beam evaporation of indium-tin-oxide (ITO) and CdS onto single crystal p-type CdTe. Surfaces investigated include air-cleaved (110) surfaces, bromine-in-methanol etched (110) and (111) surfaces, and teh latter surfaces subjected to a hydrogen heat treatment. Both air-cleaved and hydrogen heat treated surfaces have a stoichiometric Cd to Te ratio. The ITO/CdTe junction formation process involves an air heat treatment, which ahs serious effects on the behavior of junctions formed on these surfaces. Etched surfaces which have a large excesss of Te, are less affected by the junction formation process and result in ITO/CdTe heterojunctions with solar efficiencies of 9% (Vsc =20 mA/cm2). Use of low-doped CdTe results in junctions characterized by considerably larger open-circuit votages (Voc =0.81 V) which are attributable to increasing diode factors caused by a shift from interfacial recombination to recombination in the depletion region. Resulting solar efficiencies reach 10.5% which is the highest value reported to date for a genuine CdTe heterojunction, CdS/CdTe heterojunctions show a strong dependence on CdTe surface condition, but less influence on the junction formation process. Solar efficiencies of 7.5% on an etched and heat treated surface are observed. All of these ITO/CdTe and CdS/CdTe heterojunctions have been stable for at least 10 months.

New developments in clinical applications of CdTe and CdZnTe detectors

International Nuclear Information System (INIS)

Scheiber, C.

1996-01-01

This review about the medical applications of CdTe and CdZnTe is an update on the 1992 paper (1992). This new paper is legitimized by the recent progress which has been made in this field. First of all, the usefulness of a new material, i.e. CdZnTe, has been demonstrated. While the two materials are still being improved, it seems as yet too early to debate which of CdTe:Cl or CdZnTe will be the best choice. Historical applications span over the past 18 years, involving devices like miniature probes for per-operative scintigraphy or the monitoring of physiological functions and, closer to us, appliances dedicated to bone densitometry, and have been expanding as such devices have become commercially available, for many years now. Newly available microelectronic circuitry allows 2D-arrays to be built for digital quantitative X-ray (chest, dental..) and for high-resolution gamma cameras. The clinical demand is very high, especially in the field of nuclear medicine. Although there already exist clinical demonstrators, the future of such CdTe applications depends on further reduction in material and device mounting costs. New perspectives concern XCT applications, but the data resulting from research work are kept for restricted use within industrial R and D laboratories. (orig.)

Realtime aspects of pulse-to-pulse modulation

International Nuclear Information System (INIS)

Steiner, R.; Riedel, C.; Roesch, W.

1992-01-01

The pulse-to-pulse modulation of the SIS-ESR control system is described. Fast response to operator interaction and to changes in process conditions is emphasized as well as the essential part played by the timing system in pulse-to-pulse modulation. (author)

Formation of self assembled PbTe quantum dots in CdTe on Si(111)

Science.gov (United States)

Felder, F.; Fognini, A.; Rahim, M.; Fill, M.; Müller, E.; Zogg, H.

2010-01-01

We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at ˜0.3 eV and ˜0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.

Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

Directory of Open Access Journals (Sweden)

Wagner Anacleto Pinheiro

2006-03-01

Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

Experimental Influences in the Accurate Measurement of Cartilage Thickness in MRI.

Science.gov (United States)

Wang, Nian; Badar, Farid; Xia, Yang

2018-01-01

Objective To study the experimental influences to the measurement of cartilage thickness by magnetic resonance imaging (MRI). Design The complete thicknesses of healthy and trypsin-degraded cartilage were measured at high-resolution MRI under different conditions, using two intensity-based imaging sequences (ultra-short echo [UTE] and multislice-multiecho [MSME]) and 3 quantitative relaxation imaging sequences (T 1 , T 2 , and T 1 ρ). Other variables included different orientations in the magnet, 2 soaking solutions (saline and phosphate buffered saline [PBS]), and external loading. Results With cartilage soaked in saline, UTE and T 1 methods yielded complete and consistent measurement of cartilage thickness, while the thickness measurement by T 2 , T 1 ρ, and MSME methods were orientation dependent. The effect of external loading on cartilage thickness is also sequence and orientation dependent. All variations in cartilage thickness in MRI could be eliminated with the use of a 100 mM PBS or imaged by UTE sequence. Conclusions The appearance of articular cartilage and the measurement accuracy of cartilage thickness in MRI can be influenced by a number of experimental factors in ex vivo MRI, from the use of various pulse sequences and soaking solutions to the health of the tissue. T 2 -based imaging sequence, both proton-intensity sequence and quantitative relaxation sequence, similarly produced the largest variations. With adequate resolution, the accurate measurement of whole cartilage tissue in clinical MRI could be utilized to detect differences between healthy and osteoarthritic cartilage after compression.

Externally calibrated parallel imaging for 3D multispectral imaging near metallic implants using broadband ultrashort echo time imaging.

Science.gov (United States)

Wiens, Curtis N; Artz, Nathan S; Jang, Hyungseok; McMillan, Alan B; Reeder, Scott B

2017-06-01

To develop an externally calibrated parallel imaging technique for three-dimensional multispectral imaging (3D-MSI) in the presence of metallic implants. A fast, ultrashort echo time (UTE) calibration acquisition is proposed to enable externally calibrated parallel imaging techniques near metallic implants. The proposed calibration acquisition uses a broadband radiofrequency (RF) pulse to excite the off-resonance induced by the metallic implant, fully phase-encoded imaging to prevent in-plane distortions, and UTE to capture rapidly decaying signal. The performance of the externally calibrated parallel imaging reconstructions was assessed using phantoms and in vivo examples. Phantom and in vivo comparisons to self-calibrated parallel imaging acquisitions show that significant reductions in acquisition times can be achieved using externally calibrated parallel imaging with comparable image quality. Acquisition time reductions are particularly large for fully phase-encoded methods such as spectrally resolved fully phase-encoded three-dimensional (3D) fast spin-echo (SR-FPE), in which scan time reductions of up to 8 min were obtained. A fully phase-encoded acquisition with broadband excitation and UTE enabled externally calibrated parallel imaging for 3D-MSI, eliminating the need for repeated calibration regions at each frequency offset. Significant reductions in acquisition time can be achieved, particularly for fully phase-encoded methods like SR-FPE. Magn Reson Med 77:2303-2309, 2017. © 2016 International Society for Magnetic Resonance in Medicine. © 2016 International Society for Magnetic Resonance in Medicine.

Analysis of grain boundaries, twin boundaries, and Te precipitates in CdZnTe grown by high-pressure Bridgeman method

International Nuclear Information System (INIS)

Heffelfinger, J.R.; Medlin, D.L.; James, R.B.

1998-03-01

Grain boundaries and twin boundaries in commercial Cd 1-x Zn x Te, which is prepared by a high pressure Bridgeman technique, have been investigated with transmission electron microscopy, scanning electron microscopy, infrared light microscopy and visible light microscopy. Boundaries inside these materials were found to be decorated with Te precipitates. The shape and local density of the precipitates were found to depend on the particular boundary. For precipitates that decorate grain boundaries, their microstructure was found to consist of a single, saucer shaped grain of hexagonal Te (space group P3 1 21). Analysis of a Te precipitate precipitates by selected area diffraction revealed the Te to be aligned with the surrounding Cd 1-x Zn x Te grains. This alignment was found to match the (111) Cd 1-x Z x Te planes with the (1 bar 101) planes of hexagonal Te. Crystallographic alignments between the Cd 1-x Zn x Te grains were also observed for a high angle grain boundary. The structure of the grain boundaries and the Te/Cd 1-x Zn x Te interface are discussed

Pulsed rf excited spectrometer having improved pulse width control

International Nuclear Information System (INIS)

1977-01-01

RF excitation for a spectrometer is obtained by pulse width modulating an RF carrier to produce the desired broadband RF exciting spectrum. The RF excitation includes a train of composite RF pulses, each composite pulse having a primary pulse portion of a first RF phase and a second pulse portion of a second RF phase opposite that of the first. In this manner, the finite rise and fall times of the primary pulse portion are compensated for by the corresponding rise and fall times of the secondary pulse portion. The primary pulse portion is lengthened by an amount equal to the secondary pulse portion so that the secondary pulse portion cancels the added primary pulse portion. In a spectrometer, the compensating second pulse component removes certain undesired side bands of the RF excitation caused by the finite rise and fall times of the applied RF pulses. The compensating second pulse component removes certain undesired side bands associated with each of the resonant lines of the excited resonance spectrum of the sample under analysis, particularly for wide band RF excitation

Effect of Te atmosphere annealing on the properties of CdZnTe single crystals

International Nuclear Information System (INIS)

Yu Pengfei; Jie Wanqi; Wang Tao

2011-01-01

Low-resistivity CdZnTe:In (CZT:In) single crystals were annealed under Te atmosphere according to the behaviors of deep-donor Te antisite. The results indicated that the star-like Cd inclusions were completely eliminated after 120 h annealing. Meanwhile, the resistivity is greatly enhanced. The resistivity of the slice annealed after 240 h was achieved as high as 1.8x10 11 Ω cm, five orders of magnitude higher than that of as-grown slice. It suggested that the deep-donor level Te antisites were successfully introduced to pin the Fermi level at the mid band-gap position. The IR transmittances of the slices were also improved, which increased as the annealing time increased. PL measurement revealed that the (D 0 ,X) peak representing high quality of CZT crystal appeared. It can be concluded that the quality of CZT crystals is obviously improved after annealing under Te atmosphere. - Highlights: → High resistivity is due to deep-donor level Te Cd . → The resistivity achieved was as high as 1.8x10 11 Ω cm. → Star-like inclusions are Cd inclusions. → (D 0 ,X) peak represents the improvement of the crystal quality.

Kinetic barriers for Cd and Te adatoms on Cd and Te terminated CdTe (111) surface using ab initio simulations

Science.gov (United States)

Naderi, Ebadollah; Nanavati, Sachin P.; Majumder, Chiranjib; Ghaisas, S. V.

2014-03-01

In the present work we have calculated using density functional theory (DFT), diffusion barrier potentials on both the CdTe (111) surfaces, Cd terminated (A-type) & Te terminated (B-type). We employ nudge elastic band method (NEB) for obtaining the barrier potentials. The barrier is computed for Cd and for Te adatoms on both A-type and B-type surfaces. We report two energetically favourable positions along the normal to the surface, one above and other below the surface. The one above the surface has binding energy slightly more the one below. According to the results of this work, binding energy (in all cases) for adatoms are reasonable and close to experimental data. The barrier potential for hopping adatoms (Cd and Te) on both the surfaces is less than 0.35 eV. Apart from these most probable sites, there are other at least two sites on both the types of surfaces which are meta stable. We have also computed barriers for hopping to and from these meta stable positions. The present results can shade light on the defect formation mechanism in CdTe thin films during growth. The authors would like to thank C-DAC for the computing time on its PARAM series of supercomputers and DST Govt. of India, for partial funding.

First-principles study of lattice thermal conductivity in ZrTe5 and HfTe5

Science.gov (United States)

Wang, Cong; Wang, Haifeng; Chen, Y. B.; Yao, Shu-Hua; Zhou, Jian

2018-05-01

Recently, the layered transition-metal pentatellurides ZrTe5 and HfTe5 have attracted increasing attention because of their interesting topological electronic properties. Nevertheless, some of their other good physical properties seem to be ignored now. Actually, both ZrTe5 and HfTe5 have high electric conductivities (>105 Ω-1 m-1) and Seebeck coefficients (> 100 μV/K) at room temperature, thus making them promising thermoelectric materials. However, the disadvantage is that the thermal conductivities of the two materials are relatively high according to the few available experiments; meanwhile, the detailed mechanism of the intrinsic thermal conductivity has not been studied yet. Based on the density functional theory and the Boltzmann transport theory, we present here the theoretical study of the intrinsic lattice thermal conductivities of ZrTe5 and HfTe5, which are found to be in the range of 5-8 W/mṡK at room temperature and well consistent with the experimental results. We also find that the thermal conductivities of the two materials are anisotropic, which are mainly caused by their anisotropic crystal structures. Based on the detailed analysis, we proposed that the thermal conductivities of the two materials could possibly be reduced by different kinds of structural engineering at the atomic and mesoscopic scales, such as alloying, doping, nano-structuring, and polycrystalline structuring, which could make ZrTe5 and HfTe5 good thermoelectric materials for room temperature thermoelectric applications.

Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio

International Nuclear Information System (INIS)

Jeong, Jeung-hyun; Lee, Hyun Seok; Lee, Suyoun; Lee, Taek Sung; Kim, Won Mok; Wu Zhe; Cheong, Byung-ki; Kim, Seul Cham; Oh, Kyu Hwan

2009-01-01

A phase change memory (PCM) utilizes resistivity changes accompanying fast transitions from an amorphous to a crystalline phase (SET) and vice versa (RESET). An investigation was made on the SET characteristics of PCM cells with Ge-doped SbTe (Ge-ST) materials of two different Sb : Te ratios (4.53 and 2.08). For the material of higher Sb : Te (4.53), a SET operation was completed within several tens of nanoseconds via nucleation-free crystallization whereas the material of lower Sb : Te (2.08) rendered a slower SET operation requiring several hundred nanoseconds for a nucleation-mediated crystallization. From measurements of nucleation and growth kinetics via laser-induced crystallization, the observed SET characteristics of the former case were found to derive from a growth time about 10 3 times shorter than the nucleation time and those of the latter from a much shorter nucleation time as well as a longer growth time than in the former case. The measured nucleation kinetics of the lower Sb : Te (2.08) material is unexpected from the existing data, which has led us to advance an interesting finding that there occurs a trend-reversing change in the nucleation kinetics of the Ge-ST materials around the eutectic composition (Sb : Te ∼2.6); nucleation is accelerated with the increase in the Sb : Te ratio above Sb : Te of 2.6, but with a decrease in the Sb : Te ratio below it.

Schreibende Messgeräte

Science.gov (United States)

Plaßmann, Wilfried

Die schreibenden Messgeräte werden hauptsächlich eingesetzt, um Vorgänge aufzuzeichnen und zu dokumentieren, die sich im Minuten- und Stunden-Bereich abspielen. Sie sind weitgehend durch Oszilloskope oder elektronische Geräte ähnlich einem Oszilloskop ersetzt worden, die entsprechend für Langzeitaufnahmen ausgelegt sind. Der Vorteil dieser Geräte gegenüber den schreibenden Messgeräten ist der, dass die Daten dauerhaft gespeichert sind, einschließlich der notwendigen Kenngrößen wie Zeitmaßstab, Amplitude, Datum, Aufzeichnungsgerät usw., und sich in dieser Form beliebig oft ausdrucken und vor allem direkt weiterverarbeiten lassen. Weiterhin entfallen die Probleme mit der Mechanik, dem Papier und den Schreibstiften. Deshalb folgt hier eine nur kurze Darstellung der Geräte.

Active high-power RF pulse compression using optically switched resonant delay lines

International Nuclear Information System (INIS)

Tantawi, S.G.; Ruth, R.D.; Vlieks, A.E.

1996-11-01

The authors present the design and a proof of principle experimental results of an optically controlled high power rf pulse compression system. The design should, in principle, handle few hundreds of Megawatts of power at X-band. The system is based on the switched resonant delay line theory. It employs resonant delay lines as a means of storing rf energy. The coupling to the lines is optimized for maximum energy storage during the charging phase. To discharge the lines, a high power microwave switch increases the coupling to the lines just before the start of the output pulse. The high power microwave switch, required for this system, is realized using optical excitation of an electron-hole plasma layer on the surface of a pure silicon wafer. The switch is designed to operate in the TE 01 mode in a circular waveguide to avoid the edge effects present at the interface between the silicon wafer and the supporting waveguide; thus, enhancing its power handling capability

Hyaline articular cartilage: relaxation times, pulse-sequence parameters and MR appearance at 1.5 T

Energy Technology Data Exchange (ETDEWEB)

Chalkias, S.M. [Dept. of Radiology, A.H.E.P.A. General Hospital of the Aristotelian Univ., Thessaloniki (Greece); Pozzi-Mucelli, R.S. [Dept. of Radiology, Univ. of Trieste (Italy); Pozzi-Mucelli, M. [Orthopaedic Clinic, Univ. of Trieste (Italy); Frezza, F. [Dept. of Radiology, Univ. of Trieste (Italy); Longo, R. [Dept. of Radiology, Univ. of Trieste (Italy)

1994-08-01

In order to optimize the parameters for the best visualization of the internal architecture of the hyaline articular cartilage a study both ex vivo and in vivo was performed. Accurate T1 and T2 relaxation times of articular cartilage were obtained with a particular mixed sequence and then used for the creation of isocontrast intensity graphs. These graphs subsequently allowed in all pulse sequences (spin echo, SE and gradient echo, GRE) the best combination of repetition time (TR), echo time (TE) and flip angle (FA) for optimization of signal differences between MR cartilage zones. For SE sequences maximum contrast between cartilage zones can be obtained by using a long TR (> 1,500 ms) with a short TE (< 30 ms), whereas for GRE sequences maximum contrast is obtained with the shortest TE (< 15 ms) combined with a relatively long TR (> 400 ms) and an FA greater than 40 . A trilaminar appearance was demonstrated with a superficial and deep hypointense zone in all sequences and an intermediate zone that was moderately hyperintense on SE T1-weighted images, slightly more hyperintense on proton density Rho and SE T2-weighted images and even more hyperintense on GRE images. (orig.)

Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application

International Nuclear Information System (INIS)

Ji, Xinglong; Zheng, Yonghui; Zhou, Wangyang; Wu, Liangcai; Cao, Liangliang; Zhu, Min; Rao, Feng; Song, Zhitang; Feng, Songlin

2015-01-01

In this paper, V 0.21 Sb 2 Te 3 (VST) has been proposed for phase-change memory applications. With vanadium incorporating, VST has better thermal stability than Sb 2 Te 3 and can maintain in amorphous phase at room temperature. Two resistance steps were observed in temperature dependent resistance measurements. By real-time observing the temperature dependent lattice structure evolution, VST presents as a homogenous phase throughout the whole thermal process. Combining Hall measurement and transmission electron microscopy results, we can ascribe the two resistance steps to the unique crystallization mechanism of VST material. Then, the amorphous thermal stability enhancement can also be rooted in the suppression of the fast growth crystallization mechanism. Furthermore, the applicability of VST is demonstrated by resistance-voltage measurement, and the phase transition of VST can be triggered by a 15 ns electric pulse. In addition, endurance up to 2.7×10 4 cycles makes VST a promising candidate for phase-change memory applications

Bipolar pulse generator for intense pulsed ion beam accelerator

International Nuclear Information System (INIS)

Ito, H.; Igawa, K.; Kitamura, I.; Masugata, K.

2007-01-01

A new type of pulsed ion beam accelerator named ''bipolar pulse accelerator'' (BPA) has been proposed in order to improve the purity of intense pulsed ion beams. To confirm the principle of the BPA, we developed a bipolar pulse generator for the bipolar pulse experiment, which consists of a Marx generator and a pulse forming line (PFL) with a rail gap switch on its end. In this article, we report the first experimental result of the bipolar pulse and evaluate the electrical characteristics of the bipolar pulse generator. When the bipolar pulse generator was operated at 70% of the full charge condition of the PFL, the bipolar pulse with the first (-138 kV, 72 ns) and the second pulse (+130 kV, 70 ns) was successfully obtained. The evaluation of the electrical characteristics indicates that the developed generator can produce the bipolar pulse with fast rise time and sharp reversing time

Determination of equilibrium phase composition in the Hg-HgTe-CdTe system by ''dew point'' method

International Nuclear Information System (INIS)

Vanyukov, A.V.; Krotov, I.I.; Ermakov, A.I.

1978-01-01

Using the ''dew point'' method a study has been made of the equilibrium composition of the solid and liquid phases in the Hg-HgTe-CdTe system at 404, 435 and 454 deg C. It has been pointed out that crystallization of cadmium-rich solid solutions of Cdsub(x)Hgsub(1-x) Te takes place from a liquid phase with a much higher concentration of Hg. The activity of Hg in the liquid phase increases along the liquidus isotherm in the direction from section Hg-HgTe to section HgCdTe in accordance with the increase of its concentration. An increase in activity of Hg in the solid phase of Cdsub(x)Hgsub(1-x)Te has been noted with the reduction of its concentration

Self-Catalyzed CdTe Wires

Directory of Open Access Journals (Sweden)

Tom Baines

2018-04-01

Full Text Available CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111 oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

Science.gov (United States)

Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

2018-05-01

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.

Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells

Energy Technology Data Exchange (ETDEWEB)

Dzhafarov, T.D.; Yesilkaya, S.S.; Yilmaz Canli, N.; Caliskan, M. [Department of Physics, Yildiz Technical University, Davutpasa, 34210 Istanbul (Turkey)

2005-01-31

The effective diffusion coefficients of Cu for thermal and photodiffusion in the CdTe films have been estimated from resistivity versus duration of thermal or photoannealing curves. In the temperature range 60-200{sup o}C the effective coefficient of thermal diffusion (D{sub t}) and photodiffusion (D{sub ph}) are described as D{sub t}=7.3x10{sup -7}exp(-0.33/kT) and D{sub ph}=4.7x10{sup -8}exp(-0.20/kT). It is found that the diffusion doping of CdTe thin films by Cu at 400{sup o}C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.

Parallel nanostructuring of GeSbTe film with particle mask

Energy Technology Data Exchange (ETDEWEB)

Wang, Z.B.; Hong, M.H.; Wang, Q.F.; Chong, T.C. [Data Storage Institute, DSI Building, 5 Engineering Drive 1, 117608, Singapore (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 119260, Singapore (Singapore); Luk' yanchuk, B.S.; Huang, S.M.; Shi, L.P. [Data Storage Institute, DSI Building, 5 Engineering Drive 1, 117608, Singapore (Singapore)

2004-09-01

Parallel nanostructuring of a GeSbTe film may significantly improve the recording performance in data storage. In this paper, a method that permits direct and massively parallel nanopatterning of the substrate surface by laser irradiation is investigated. Polystyrene spherical particles were deposited on the surface in a monolayer array by self-assembly. The array was then irradiated with a 248-nm KrF laser. A sub-micron nanodent array can be obtained after single-pulse irradiation. These nanodents change their shapes at different laser energies. The optical near-field distribution around the particles was calculated according to the exact solution of the light-scattering problem. The influence of the presence of the substrate on the optical near field was also studied. The mechanisms for the generation of the nanodent structures are discussed. (orig.)

Ultrafast terahertz-induced response of GeSbTe phase-change materials

Energy Technology Data Exchange (ETDEWEB)

Shu, Michael J. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Zalden, Peter [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Chen, Frank [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Weems, Ben [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Chatzakis, Ioannis [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Hoffmann, Matthias C. [SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University, 52056 Aachen (Germany); JARA–Fundamentals of Information Technology, RWTH Aachen University, 52056 Aachen (Germany); Lindenberg, Aaron M., E-mail: aaronl@stanford.edu [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

2014-06-23

The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200 kV/cm.

A measurement of the 2 neutrino double beta decay rate of Te-130 in the CUORICINO experiment

Energy Technology Data Exchange (ETDEWEB)

Kogler, Laura K. [Univ. of California, Berkeley, CA (United States)

2011-11-30

CUORICINO was a cryogenic bolometer experiment designed to search for neutrinoless double beta decay and other rare processes, including double beta decay with two neutrinos (2vββ). The experiment was located at Laboratori Nazionali del Gran Sasso and ran for a period of about 5 years, from 2003 to 2008. The detector consisted of an array of 62 TeO₂ crystals arranged in a tower and operated at a temperature of 10 mK. Events depositing energy in the detectors, such as radioactive decays or impinging particles, produced thermal pulses in the crystals which were read out using sensitive thermistors. The experiment included 4 enriched crystals, 2 enriched with ¹³⁰Te and 2 with ¹²⁸Te, in order to aid in the measurement of the 2vββ rate. The enriched crystals contained a total of 350 g ¹³⁰Te. The 128-enriched (130-depleted) crystals were used as background monitors, so that the shared backgrounds could be subtracted from the energy spectrum of the 130- enriched crystals. Residual backgrounds in the subtracted spectrum were fit using spectra generated by Monte-Carlo simulations of natural radioactive contaminants located in and on the crystals. The 2vββ half-life was measured to be T^2v_1/2 = [9.81± 0.96(stat)± 0.49(syst)] x10²⁰ y.

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

Energy Technology Data Exchange (ETDEWEB)

Ricq, St

1999-09-28

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

Nb/sub 2/Te/sub 2/O/sub 9/ and Ta/sub 2/Te/sub 2/O/sub 9/: Two new mixed oxides of Te(IV)

International Nuclear Information System (INIS)

Gaitan, M.; Jerez, A.; Pico, C.; Veiga, M.L.

1987-01-01

Nb/sub 2/Te/sub 2/O/sub 9/ and Ta/sub 2/Te/sub 2/O/sub 9/ were prepared by solid state reactions between amorphous TeO/sub 3/(s) and metallic pentoxides of Nb and Ta. A crystallographic analysis carried out by X-ray diffraction showed that these compounds are isostructural (space group: P2/sub 1//C. a = 6.883 A, b = 7.853 A, c = 14.591 A, β = 103.66 for Nb/sub 2/Te/sub 2/O/sub 9/ and a = 7.10 A, b = 7.48 A, c = 14.62 A, β = 102.9 for Ta/sub 2/Te/sub 2/O/sub 9/). The IR spectra and thermal decomposition processes of both mixed oxides were studied

New autocorrelation technique for the IR FEL optical pulse width measurements

Energy Technology Data Exchange (ETDEWEB)

Amirmadhi, F.; Brau, K.A.; Becker, C. [Vanderbilt Univ., Nashville, TN (United States)] [and others

1995-12-31

We have developed a new technique for the autocorrelation measurement of optical pulse width at the Vanderbilt University FEL center. This method is based on nonlinear absorption and transmission characteristics of semiconductors such as Ge, Te and InAs suitable for the wavelength range from 2 to over 6 microns. This approach, aside being simple and low cost, removes the phase matching condition that is generally required for the standard frequency doubling technique and covers a greater wavelength range per nonlinear material. In this paper we will describe the apparatus, explain the principal mechanism involved and compare data which have been acquired with both frequency doubling and two-photon absorption.

Bacon, Lettuce and Tomato: een strategie om leerlingen te helpen hun antwoorden op examenvragen te verbeteren

NARCIS (Netherlands)

Kneppers, L.

2014-01-01

In Tutor2u las ik dat in een workshop een strategie was besproken om leerlingen te helpen hun examenantwoorden vollediger en juister te formuleren. De strategie heet in Groot Brittannië BLT, voor leerlingen daar gemakkelijk te onthouden vanwege de populaire Bacon, Lettuce en Tomato sandwich.

HgTe based topological insulators

International Nuclear Information System (INIS)

Bruene, Christoph

2014-01-01

This PhD thesis summarizes the discovery of topological insulators and highlights the developments on their experimental observations. The work focuses on HgTe. The thesis is structured as follows: - The first chapter of this thesis will give a brief overview on discoveries in the field of topological insulators. It focuses on works relevant to experimental results presented in the following chapters. This includes a short outline of the early predictions and a summary of important results concerning 2-dimensional topological insulators while the final section discusses observations concerning 3-dimensional topological insulators. - The discovery of the quantum spin Hall effect in HgTe marked the first experimental observation of a topological insulator. Chapter 2 focuses on HgTe quantum wells and the quantum spin Hall effect. The growth of high quality HgTe quantum wells was one of the major goals for this work. In a final set of experiments the spin polarization of the edge channels was investigated. Here, we could make use of the advantage that HgTe quantum well structures exhibit a large Rashba spin orbit splitting. - HgTe as a 3-dimensional topological insulator is presented in chapter 3. - Chapters 4-6 serve as in depth overviews of selected works: Chapter 4 presents a detailed overview on the all electrical detection of the spin Hall effect in HgTe quantum wells. The detection of the spin polarization of the quantum spin Hall effect is shown in chapter 5 and chapter 6 gives a detailed overview on the quantum Hall effect originating from the topological surface state in strained bulk HgTe.

Pulse on pulse: modulation and signification in Rafael Lozano-Hemmer's Pulse Room

Directory of Open Access Journals (Sweden)

Merete Carlson

2012-06-01

Full Text Available This article investigates the relation between signifying processes and non-signifying material dynamism in the installation Pulse Room (2006 by Mexican Canadian artist Rafael Lozano-Hemmer. In Pulse Room the sense of pulse is ambiguous. Biorhythms are transmitted from the pulsing energy of the visitor's beating heart to the flashing of a fragile light bulb, thereby transforming each light bulb into a register of individual life. But at the same time the flashing light bulbs together produce a chaotically flickering light environment composed by various layers of repetitive rhythms, a vibrant and pulsating “room”. Hence, the visitor in Pulse Room is invited into a complex scenario that continuously oscillates between various aspects of signification (the light bulbs representing individual lives; the pulse itself as the symbolic “rhythm of life” and instants of pure material processuality (flickering light bulbs; polyrhythmic layers. Taking our point of departure in a discussion of Gilles Deleuze's concepts of modulation and signaletic material in relation to electronic media, we examine how the complex orchestration of pulsation between signification and material modulation produces a multilayered sense of time and space that is central to the sensory experience of Pulse Room as a whole. Pulse Room is, at the very same time, a relational subject–object intimacy and an all-encompassing immersive environment modulating continuously in real space-time.

Study on the local stress induced dislocations on (1 bar 1 bar 1 bar) Te face of CdTe-based crystals

Science.gov (United States)

Fu, Xu; Xu, Yadong; Xu, Lingyan; Gu, Yaxu; Jia, Ningbo; Jie, Wanqi

2017-11-01

The rosette-like dislocation clusters around Te inclusions in as-grown CdZnTe/CdTe crystals and those introduced by the micro-indentation on CdZnTe/CdTe surface are studied experimentally. The extended dislocation patterns are formed around Te inclusions in both CdZnTe and CdTe crystals, owing to the build-in stress. Two mutually orthogonal tetrahedrons are observed in CdZnTe crystal. However, the ;double-arms; dislocation rosette pattern extended along 〈1 1 0〉 direction is observed in CdTe crystal. The Peierls kink pair mechanism and the Hirsch effects are used to explain the discrepancy of these two different rosette patterns. Similar dislocation rosette patterns are observed on indentation surface of CdZnTe crystal. The dislocation rosette patterns are found to be independent of the indenter orientation, but completely determined by the crystallographic properties of zinc-blende structure of the crystal. Furthermore, the Te(g) and Cd(g) dislocation arms are found to be mixed and bended with each other in CdTe crystal under high indentation stress, making it different from that generated around Te inclusions. A model concerning the comprehensive impact of stress field and electronic polarities dislocations is proposed to clarify the dislocation bending phenomenon.

On the electronic structure and thermoelectric properties of BiTeBr and BiTeI single crystals and of BiTeI with the addition of BiI3 and CuI

International Nuclear Information System (INIS)

Kulbachinskii, Vladimir A.; Kytin, Vladimir G.; Kudryashov, Alexey A.; Kuznetsov, Alexei N.; Shevelkov, Andrei V.

2012-01-01

The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin–orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. The optimized crystal structures show a tendency for the Bi–X (X=Br, I) bond elongation compared to the Bi–Te one. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering model. Because of larger thermopower BiTeBr exhibits a twice higher thermoelectric figure-of-merit near room temperature, ZT=0.17, compared to BiTeI. The addition of 1 mass% of BiI 3 or CuI to BiTeI decreases the mobility of electrons by two orders of magnitude, leading to significantly lower electrical conductivity, but at the same time effectively reduces the thermal conductivity. The prospects of further enhancing the thermoelectric efficiency are briefly discussed. - Graphical abstract: View of the crystal structure of BiTeBr is shown in the figure The optimized crystal structures show a tendency for the Bi–X (X=Br, I) bond elongation compared to the Bi–Te one. The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin–orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering

La Zona del Carbón durante el gobierno de la Unidad Popular y la Educación de los Trabajadores: Sedes universitarias UdeC-UTE de 1971

Directory of Open Access Journals (Sweden)

Ismael Cáceres-Correa

2013-07-01

Full Text Available Resumen: Durante el Gobierno de la Unidad Popular en Chile se materializaron una serie de demandas populares que exigían cada día mayores cuotas de mandato en los distintos ámbitos de la sociedad. Una de ellas fue la exigencia de una mejora en la educación de los trabajadores de la  Zona del Carbón para desarrollar con mayor acierto sus funciones laborales. Durante años esta demanda se había incubado en la idea de los sindicatos y autoridades de  la  Zona  provocando que  en  1971  se  unieran las  Universidades de Concepción y Técnica del Estado para llevar a cabo un proyecto educativo y político en el mencionado sector. El texto busca dar cuenta de este hecho concreto y contrastar su olvido intencionado a través de la memoria de quienes vivieron el proceso. Palabras clave: UdeC, UTE, carbón, educación con adultos, educación de trabajadores, Coronel-Lota

CdTe and Cd1-xZnxTe for nuclear detectors: facts and fictions

International Nuclear Information System (INIS)

Fougeres, P.; Siffert, P.; Hageali, M.; Koebel, J.M.; Regal, R.

1999-01-01

Both CdTe and Cd 1-x Zn x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and γ-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best

Identification of Ag-acceptors in $^{111}Ag^{111}Cd$ doped ZnTe and CdTe

CERN Document Server

Hamann, J; Deicher, M; Filz, T; Lany, S; Ostheimer, V; Strasser, F; Wolf, H; Wichert, T

2000-01-01

Nominally undoped ZnTe and CdTe crystals were implanted with radioactive /sup 111/Ag, which decays to /sup 111/Cd, and investigated by photoluminescence spectroscopy (PL). In ZnTe, the PL lines caused by an acceptor level at 121 meV are observed: the principal bound exciton (PBE) line, the donor-acceptor pair (DAP) band, and the two-hole transition lines. In CdTe, the PBE line and the DAP band that correspond to an acceptor level at 108 meV appear. Since the intensities of all these PL lines decrease in good agreement with the half-life of /sup 111/Ag of 178.8 h, both acceptor levels are concluded to be associated with defects containing a single Ag atom. Therefore, the earlier assignments to substitutional Ag on Zn- and Cd-lattice sites in the respective II-VI semiconductors are confirmed. The assignments in the literature of the S/sub 1/, S /sub 2/, and S/sub 3/ lines in ZnTe and the X/sub 1//sup Ag/, X/sub 2 //sup Ag//C/sub 1//sup Ag/, and C/sub 2//sup Ag/ lines in CdTe to Ag- related defect complexes are ...

Pulsed Polarimetry and magnetic sensing on the Magnetized Shock Experiment (MSX)

Science.gov (United States)

Smith, R. J.; Hutchinson, T. M.; Weber, T. E.; Taylor, S. F.; Hsu, S. C.

2014-10-01

MSX is uniquely positioned to generate the conditions for collision-less magnetized supercritical shocks with Alvenic Mach numbers (MA) of the order 10 and higher. Significant operational strides have been made in forming plasmas over wide parameter ranges: (Te + Ti) of 10-200 eV, average neof 5-60×10+21 m-3, speeds up to 150 km/s and fields up to 1T with a highest plasma flow MA of 5 to date. The MSX plasma is unique in regards to large plasma size of 10 cm and average β higher than 0.8 making the FRC and the magnetized shock structure candidates for the application of Pulsed Polarimetry, a polarization sensitive Lidar technique. The shock dynamics are presently being investigated using internal probes, interferometry and imaging. Internal probe results and an assessment of the shock parameters will dictate the use of the UW pulsed polarimeter system in which internal ne, Teand B are to be measured. Recent results will be presented. Supported by DOE Office of Fusion Energy Sciences Funding DE-FOA-0000755.

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

Energy Technology Data Exchange (ETDEWEB)

Ricq, St

1999-09-28

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

Recent progress in EAST towards long-pulse high-performance operations

International Nuclear Information System (INIS)

Wang Liang; Wan Baonian; Li Jiangang; Guo Houyang; Liang Yunfeng; Xu Guosheng; Gong Xianzu; Garofalo, Andrea

2015-01-01

Significant advance has been made in EAST on both physics and technology fronts towards the long-pulse operation of high-confinement plasma regimes since the last IAEA-FEC. The EAST capabilities have been greatly upgraded, including the significantly enhanced CW H and CD system with up to 26 MW heating power, more than 70 diagnostics, ITER-like W monoblock top divertor, two internal cryo-pumps and RMP coils, enabling EAST to investigate long-pulse H-mode operation with dominant electron heating and low input torque, and to address some of critical issues for ITER. Remarkable physics progress has been made on controlling transient ELM and stationary divertor heat fluxes, e.g., ELM mitigation/suppression/pacing with LHCD and SMBI, real-time Li aerosol injection for long pulse ELM-free H-mode, edge coherent mode for continuous pedestal particle and power removal, and the combination of LHCD and SMBI to actively modify the stationary power footprint by regulating the divertor conditions. In the 2014 commissioning campaign, long-pulse high-performance H-mode up to 28 s has been obtained with H_9_8∼1.15, i.e., about ∼ 30% higher than the record 32 s H-mode achieved in the 2012 campaign. Other key new experimental achievements are: (1) high performance H-mode with β_N ∼ 2 and plasma stored energy ∼ 220 kJ, (2) high performance operation with core T_e ∼ 4.5 keV, (3) H-mode plasma enabled by NBI alone or LHW+NBI modulation for the first time in EAST, (4) demonstration of a quasi snowflake divertor configuration, (5) new findings on L-H transition and pedestal physics. (author)

Increased short circuit current in organic photovoltaic using high-surface area electrode based on ZnO nanowires decorated with CdTe quantum dots.

Science.gov (United States)

Aga, R S; Gunther, D; Ueda, A; Pan, Z; Collins, W E; Mu, R; Singer, K D

2009-11-18

A photosensitized high-surface area transparent electrode has been employed to increase the short circuit current of a photovoltaic device with a blend of poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) as the active layer. This is achieved by directly growing ZnO nanowires on indium tin oxide (ITO) film via a physical vapor method. The nanowire surface is then decorated with CdTe quantum dots by pulsed electron-beam deposition (PED). The nanowires alone provided a 20-fold increase in the short circuit current under visible light illumination. This was further increased by a factor of approximately 1.5 by the photosensitization effect of CdTe, which has an optical absorption of up to 820 nm.

Strong sp-d exchange coupling in ZnMnTe/ZnMgTe core/shell nanowires

Energy Technology Data Exchange (ETDEWEB)

Wojnar, Piotr; Janik, Elzbieta; Szymura, Malgorzata; Zaleszczyk, Wojciech; Kret, Slawomir; Klopotowski, Lukasz; Wojciechowski, Tomasz; Baczewski, Lech T.; Wiater, Maciej; Karczewski, Grzegorz; Wojtowicz, Tomasz; Kossut, Jacek [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Suffczynski, Jan; Papierska, Joanna [Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00-681 Warsaw (Poland)

2014-07-15

In this work, our recent progress in the growth and optical studies of telluride nanowire heterostructures containing a small molar fraction of magnetic Mn-ions of only a few percent is overviewed. ZnMnTe/ZnMgTe core/shell nanowires (NWs) are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalyst. The structures are studied by means of photoluminescence and microphotoluminescence in an external magnetic field. In the first step, however, an activation of the near band edge emission from ZnTe and ZnMnTe nanowires is described, which is achieved by coating the nanowires with shells made of ZnMgTe. The role of these shells is to passivate Zn(Mn)Te surface states. The incorporation of Mn ions into the crystalline lattice of ZnMnTe nanowires is manifested as a considerable blue shift of near band edge emission with increasing Mn concentration inside the nanowire cores, which reflects directly the increase of their energy gap. In an external magnetic field the near band edge emission exhibits a giant spectral redshift accompanied by an increase of the circular polarization of the emitted light. Both effect are fingerprints of giant Zeeman splitting of the band edges due to sp-d exchange interaction between the band carriers and magnetic Mn-ions. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The effect of dephasing on edge state transport through p-n junctions in HgTe/CdTe quantum wells.

Science.gov (United States)

Zhang, Ying-Tao; Song, Juntao; Sun, Qing-Feng

2014-02-26

Using the Landauer-Büttiker formula, we study the effect of dephasing on the transport properties of the HgTe/CdTe p-n junction. It is found that in the HgTe/CdTe p-n junction the topologically protected gapless helical edge states manifest a quantized 2e²/h plateau robust against dephasing, in sharp contrast to the case for the normal HgTe/CdTe quantum well. This robustness of the transport properties of the edge states against dephasing should be attributed to the special construction of the HgTe/CdTe p-n junction, which limits the gapless helical edge states to a very narrow region and thus weakens the influence of the dephasing on the gapless edge states to a large extent. Our results demonstrate that the p-n junction could be a substitute device for use in experimentally observing the robust edge states and quantized plateau. Finally, we present a feasible scheme based on current experimental methods.

Measurement of the drift mobilities and the mobility-lifetime products of charge carriers in a CdZnTe crystal by using a transient pulse technique

International Nuclear Information System (INIS)

Cho, H Y; Kwon, Y K; Lee, C S; Lee, J H; Moon, J Y

2011-01-01

In this work we present results on the measurement of the drift mobility and the mobility-lifetime product of charge carriers in a 16-pixellated CdZnTe detector. For the determination of an interaction position based on the pulse rise-time method in a CZT detector, it is necessary to characterize the transport properties governed by drift mobility and lifetime for electrons and holes. In order to extract the transport properties of an electron and a hole, we bombarded 5.5-MeV alpha particles from a 241 Am source and 81-keV gamma rays emitted from a 133 Ba source on the negatively biased contact of the CZT detector. A time-of-flight (TOF) method was used to measure the electron drift mobility at room temperature whose value turned out to be 906.4 cm 2 /Vc s. With the Hecht's equation, the electron mobility-lifetime product was also determined from the bias-dependent alpha response and was equal to (9.88 ± 2.33) x 10 -3 cm 2 /V. On the other hand, the hole mobility-lifetime product was evaluated by a model based on the average charge collection efficiency which accounts for the absorption probability with a given photon energy. By using a single parameter fitting of the model, we obtained the hole mobility-lifetime product of (8.28 ± 0.17) x 10 -4 cm 2 /V.

Numerical study of the influence of ZnTe thickness on CdS/ZnTe solar cell performance

Science.gov (United States)

Skhouni, Othmane; El Manouni, Ahmed; Mari, Bernabe; Ullah, Hanif

2016-05-01

At present most of II-VI semiconductor based solar cells use the CdTe material as an absorber film. The simulation of its performance is realized by means of various numerical modelling programs. We have modelled a solar cell based on zinc telluride (ZnTe) thin film as absorber in substitution to the CdTe material, which contains the cadmium element known by its toxicity. The performance of such photovoltaic device has been numerically simulated and the thickness of the absorber layer has been optimized to give the optimal conversion efficiency. A photovoltaic device consisting of a ZnTe layer as absorber, CdS as the buffer layer and ZnO as a window layer was modelled through Solar Cell Capacitance Simulator Software. Dark and illuminated I-V characteristics and the results for different output parameters of ZnO/CdS/ZnTe solar cell were analyzed. The effect of ZnTe absorber thickness on different main working parameters such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, photovoltaic conversion efficiency η was intensely studied in order to optimize ZnTe film thickness. This study reveals that increasing the thickness of ZnTe absorber layer results in higher efficiency until a maximum value and then decreases slightly. This maximum was found to be 10% at ZnTe optimum thickness close to 2 µm. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

MRI-Only Based Radiotherapy Treatment Planning for the Rat Brain on a Small Animal Radiation Research Platform (SARRP.

Directory of Open Access Journals (Sweden)

Shandra Gutierrez

Full Text Available Computed tomography (CT is the standard imaging modality in radiation therapy treatment planning (RTP. However, magnetic resonance (MR imaging provides superior soft tissue contrast, increasing the precision of target volume selection. We present MR-only based RTP for a rat brain on a small animal radiation research platform (SARRP using probabilistic voxel classification with multiple MR sequences. Six rat heads were imaged, each with one CT and five MR sequences. The MR sequences were: T1-weighted, T2-weighted, zero-echo time (ZTE, and two ultra-short echo time sequences with 20 μs (UTE1 and 2 ms (UTE2 echo times. CT data were manually segmented into air, soft tissue, and bone to obtain the RTP reference. Bias field corrected MR images were automatically segmented into the same tissue classes using a fuzzy c-means segmentation algorithm with multiple images as input. Similarities between segmented CT and automatic segmented MR (ASMR images were evaluated using Dice coefficient. Three ASMR images with high similarity index were used for further RTP. Three beam arrangements were investigated. Dose distributions were compared by analysing dose volume histograms. The highest Dice coefficients were obtained for the ZTE-UTE2 combination and for the T1-UTE1-T2 combination when ZTE was unavailable. Both combinations, along with UTE1-UTE2, often used to generate ASMR images, were used for further RTP. Using 1 beam, MR based RTP underestimated the dose to be delivered to the target (range: 1.4%-7.6%. When more complex beam configurations were used, the calculated dose using the ZTE-UTE2 combination was the most accurate, with 0.7% deviation from CT, compared to 0.8% for T1-UTE1-T2 and 1.7% for UTE1-UTE2. The presented MR-only based workflow for RTP on a SARRP enables both accurate organ delineation and dose calculations using multiple MR sequences. This method can be useful in longitudinal studies where CT's cumulative radiation dose might contribute

MRI-Only Based Radiotherapy Treatment Planning for the Rat Brain on a Small Animal Radiation Research Platform (SARRP).

Science.gov (United States)

Gutierrez, Shandra; Descamps, Benedicte; Vanhove, Christian

2015-01-01

Computed tomography (CT) is the standard imaging modality in radiation therapy treatment planning (RTP). However, magnetic resonance (MR) imaging provides superior soft tissue contrast, increasing the precision of target volume selection. We present MR-only based RTP for a rat brain on a small animal radiation research platform (SARRP) using probabilistic voxel classification with multiple MR sequences. Six rat heads were imaged, each with one CT and five MR sequences. The MR sequences were: T1-weighted, T2-weighted, zero-echo time (ZTE), and two ultra-short echo time sequences with 20 μs (UTE1) and 2 ms (UTE2) echo times. CT data were manually segmented into air, soft tissue, and bone to obtain the RTP reference. Bias field corrected MR images were automatically segmented into the same tissue classes using a fuzzy c-means segmentation algorithm with multiple images as input. Similarities between segmented CT and automatic segmented MR (ASMR) images were evaluated using Dice coefficient. Three ASMR images with high similarity index were used for further RTP. Three beam arrangements were investigated. Dose distributions were compared by analysing dose volume histograms. The highest Dice coefficients were obtained for the ZTE-UTE2 combination and for the T1-UTE1-T2 combination when ZTE was unavailable. Both combinations, along with UTE1-UTE2, often used to generate ASMR images, were used for further RTP. Using 1 beam, MR based RTP underestimated the dose to be delivered to the target (range: 1.4%-7.6%). When more complex beam configurations were used, the calculated dose using the ZTE-UTE2 combination was the most accurate, with 0.7% deviation from CT, compared to 0.8% for T1-UTE1-T2 and 1.7% for UTE1-UTE2. The presented MR-only based workflow for RTP on a SARRP enables both accurate organ delineation and dose calculations using multiple MR sequences. This method can be useful in longitudinal studies where CT's cumulative radiation dose might contribute to the total

Determination of a natural valence-band offset - The case of HgTe and CdTe

Science.gov (United States)

Shih, C. K.; Spicer, W. E.

1987-01-01

A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

Study of the CdX-B2X3-X (X=S, Se), CdTe-B-Te systems

International Nuclear Information System (INIS)

Odin, I.N.; Grin'ko, V.V.; Safronov, E.V.; Kozlovskij, V.F.

2001-01-01

Liquidus surfaces of the CdX-B 2 X 3 -X (X=S, Se), CdTe-B-Te systems are plotted for the first time. It is shown that in equilibrium solid solutions on the basis of ternary Cd 2 B 2 X 5 compounds and binary B 2 X 3 , CdX, BS 2 compounds take part with liquid phases. p gen -T and T-x projects of p-T-x phase diagram of B-S (59-100 at. % S), B-Se (59-100 at. % Se), B-Te systems are plotted . B 2 X 3 , BS 2 compounds are formed in that regions of compositions of B-X systems . In the B-Te system compounds are not formed. Ternary compounds are not formed in the CdTe-B-Te system [ru

Zn2(TeO3Br2

Directory of Open Access Journals (Sweden)

Mats Johnsson

2008-05-01

Full Text Available Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetrahedra, and [TeO3E] tetrahedra (E being the 5s2 lone pair of Te4+ joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3Br2 is isostructural with the synthetic compounds Zn2(TeO3Cl2, CuZn(TeO32, Co2(TeO3Br2 and the mineral sophiite, Zn2(SeO3Cl2.

Compact rf polarizer and its application to pulse compression systems

Directory of Open Access Journals (Sweden)

Matthew Franzi

2016-06-01

Full Text Available We present a novel method of reducing the footprint and increasing the efficiency of the modern multi-MW rf pulse compressor. This system utilizes a high power rf polarizer to couple two circular waveguide modes in quadrature to a single resonant cavity in order to replicate the response of a traditional two cavity configuration using a 4-port hybrid. The 11.424 GHz, high-Q, spherical cavity has a 5.875 cm radius and is fed by the circularly polarized signal to simultaneously excite the degenerate TE_{114} modes. The overcoupled spherical cavity has a Q_{0} of 9.4×10^{4} and coupling factor (β of 7.69 thus providing a loaded quality factor Q_{L} of 1.06×10^{4} with a fill time of 150 ns. Cold tests of the polarizer demonstrated good agreement with the numerical design, showing transmission of -0.05  dB and reflection back to the input rectangular WR 90 waveguide less than -40  dB over a 100 MHz bandwidth. This novel rf pulse compressor was tested at SLAC using XL-4 Klystron that provided rf power up to 32 MW and generated peak output power of 205 MW and an average of 135 MW over the discharged signal. A general network analysis of the polarizer is discussed as well as the design and high power test of the rf pulse compressor.

Si-Sb-Te materials for phase change memory applications

International Nuclear Information System (INIS)

Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

2011-01-01

Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

Robust half-metallicity at the zincblende CrTe(0 0 1) surfaces and its interface with ZnTe(0 0 1)

International Nuclear Information System (INIS)

Ahmadian, F.; Abolhassani, M.R.; Hashemifar, S.J.; Elahi, M.

2010-01-01

All electron full potential calculations based on spin density functional theory are performed to study cubic zincblende (ZB) and hexagonal NiAs structures of bulk CrTe, free (0 0 1) surfaces of ZB CrTe, and interface of ZB CrTe with ZnTe(0 0 1). The ferromagnetic NiAs structure is reported to be about 0.26 eV more stable than the ferromagnetic ZB phase while ZB CrTe is found to be a half-metallic ferromagnet with a half-metallic gap of about 2.90 eV. Thermodynamic stability of CrTe(0 0 1) surfaces are studied in the framework of ab-initio thermodynamic. The obtained phase diagram evidences more stability of the Te terminated surface compared with the Cr termination. We discuss that both Te and Cr ideal terminations of CrTe(0 0 1) retain bulk-like half-metallic property but with a reduced half-metallic gap compared with bulk value. The structural, electronic, magnetic, and band alignment properties of the ZB CrTe/ZnTe(0 0 1) interface are computed and a rather large minority valence band offset of about 1.09 eV is observed in this heterojunction.

Investigations of small-gap semiconductors: HgTe, HgMnTe and PbMnTe in the far infrared region using Fourierspectroscopic methods

International Nuclear Information System (INIS)

Roschger, I.

1985-05-01

A special method was developed in the framework of this thesis to solve the inherent problem of dynamic range in Fourier spectrometry by using optical compensation. The so-called dual beam spectrometer consists of two coupled interferometers. This technique was adapted for measurements on small gap semiconductors. The investigated sample was n-HgTe, for which a resonant acceptor absorption in the conduction band was predicted. By alloying Mn-ions into the inverted gap-HgTe-crystal the band gap can be tuned to an open gap band structure. The mixed crystal exhibits additional structures in the phonon spectrum. The model of Barker and Verleur (including clustering) was applied. The substitution of Mn-ions in the IV-VI-compound PbTe leads to semimagnetic effects resolved by magneto-reflectivity measurements. The extrapolation in the fan-charts to zero-magnetic field suggests residual spin splitting either in the conduction and/or in the valence band. To evaluate the data an oscillator fit was applied to cyclotron absorption (Faraday- and Voigt-configuration) and was proved to be in agreement with the experimental data. Zero field splitting appears in PbMnTe in the valence band and indicates a weak ferromagnetism already observed in other measurements cited in the literature. Kramers-Kronig-data were in agreement with the theoretical results of the Barker-Verleur-model. The influence of clustering in the mixed crystal HgMnTe on the phonon spectra must be taken into account for Mn concentrations > 20%. The existence of the resonance acceptor state in HgTe was proved by optical transmission measurements. (Author, shortened by G.Q.)

Short-pulse optical parametric chirped-pulse amplification for the generation of high-power few-cycle pulses

International Nuclear Information System (INIS)

Major, Zs.; Osterhoff, J.; Hoerlein, R.; Karsch, S.; Fuoloep, J.A.; Krausz, F.; Ludwig-Maximilians Universitaet, Muenchen

2006-01-01

Complete test of publication follows. In the quest for a way to generate ultrashort, high-power, few-cycle laser pulses the discovery of optical parametric amplification (OPA) has opened up to the path towards a completely new regime, well beyond that of conventional laser amplification technology. The main advantage of this parametric amplification process is that it allows for an extremely broad amplification bandwidth compared to any known laser amplifier medium. When combined with the chirped-pulse amplification (CPA) principle (i.e. OPCPA), on one hand pulses of just 10 fs duration and 8 mJ pulse energy have been demonstrated. On the other hand, pulse energies of up to 30 J were also achieved on a different OPCPA system; the pulse duration in this case, however, was 100 fs. In order to combine ultrashort pulse durations (i.e. pulses in the few-cycle regime) with high pulse energies (i.e. in the Joule range) we propose tu pump on OPCPA chain with TW-scale short pulses (100 fs - 1 ps instead of > 100 ps of previous OPCPA systems) delivered by a conventional CPA system. This approach inherently improves the conditions for generating high-power ultrashort pulses using OPCPA in the following ways. Firstly, the short pump pulse duration reduces the necessary stretching factor for the seed pulse, thereby increasing stretching and compression fidelity. Secondly, also due to the shortened pump pulse duration, a much higher contrast is achieved. Finally, the significantly increased pump power makes the use of thinner OPCPA crystals possible, which implies an even broader amplification bandwidth, thereby allowing for even shorter pulses. We carried out theoretical investigations to show the feasibility of such a set-up. Alongside these studies we will also present preliminary experimental results of an OPCPA system pumped by the output of our Ti:Sapphire ATLAS laser, currently delivering 350 mJ in 43 fs. An insight into the planned scaling of this technique to petawatt

Zn2(TeO3)Br2

Science.gov (United States)

Zhang, Dong; Johnsson, Mats

2008-01-01

Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3)Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetra­hedra, and [TeO3 E] tetra­hedra (E being the 5s 2 lone pair of Te4+) joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3)Br2 is isostructural with the synthetic compounds Zn2(TeO3)Cl2, CuZn(TeO3)2, Co2(TeO3)Br2 and the mineral sophiite, Zn2(SeO3)Cl2. PMID:21202162

Influence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films

International Nuclear Information System (INIS)

Yuan, Feifei; Shi, Zhixiang; Iida, Kazumasa; Langer, Marco; Hänisch, Jens; Hühne, Ruben; Schultz, Ludwig; Ichinose, Ataru; Tsukada, Ichiro; Sala, Alberto; Putti, Marina

2015-01-01

FeSe 0.5 Te 0.5 thin films were grown by pulsed laser deposition on CaF 2 , LaAlO 3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe 0.5 Te 0.5 bulk and the substrate shows no influence on the lattice parameters of the films, whereas the type of substrate affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density J c (θ) at θ = 180° (H||c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no J c (θ) peaks for H||c were observed in films on CaF 2 and LaAlO 3 . J c (θ) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg–Landau approach with appropriate anisotropy ratio γ J . The scaling parameter γ J is decreasing with decreasing temperature, which is different from what we observed in FeSe 0.5 Te 0.5 films on Fe-buffered MgO substrates. (paper)

Pulsed electron beam generation with fast repetitive double pulse system

Energy Technology Data Exchange (ETDEWEB)

Sharma, Surender Kumar; Deb, Pankaj; Shyam, Anurag, E-mail: surender80@gmail.com [Energetics and Electromagnetics Division, Bhabha Atomic Research Centre, Visakhapatnam (India); Sharma, Archana [Accelerator and Pulse Power Division, Bhabha Atomic Research Centre, Mumbai (India)

2014-07-01

Longer duration high voltage pulse (∼ 100 kV, 260 ns) is generated and reported using helical pulse forming line in compact geometry. The transmission line characteristics of the helical pulse forming line are also used to develop fast repetition double pulse system with very short inter pulse interval. It overcomes the limitations caused due to circuit parameters, power supplies and load characteristics for fast repetitive high voltage pulse generation. The high voltage double pulse of 100 kV, 100 ns with an inter pulse repetition interval of 30 ns is applied across the vacuum field emission diode for pulsed electron beam generation. The electron beam is generated from cathode material by application of negative high voltage (> 100 kV) across the diode by explosive electron emission process. The vacuum field emission diode is made of 40 mm diameter graphite cathode and SS mesh anode. The anode cathode gap was 6 mm and the drift tube diameter was 10 cm. The initial experimental results of pulsed electron beam generation with fast repetitive double pulse system are reported and discussed. (author)

HgTe-CdTe phase diagrams calculation by RAS model

International Nuclear Information System (INIS)

Hady, A.A.A.

1986-11-01

The model of Regular Associated Solutions (RAS) for binary solution, which extended onto the ternary solution was used for Mercury-Cadnium-Tellurim phase diagrams calculations. The function of dissociation parameters is used here as a function of temperature and it is independent of composition. The ratio of mole fractions has a weak dependence on temperature and is not neglected. The calculated liquidus binary temperature and the experimental one are so fitted to give the best values of parameters used to calculate the HgTe-CdTe phase diagrams. (author)

Pulse Distortion in Saturated Fiber Optical Parametric Chirped Pulse Amplification

DEFF Research Database (Denmark)

Lali-Dastjerdi, Zohreh; Da Ros, Francesco; Rottwitt, Karsten

2012-01-01

Fiber optical parametric chirped pulse amplification is experimentally compared for different chirped pulses in the picosecond regime. The amplified chirped pulses show distortion appearing as pedestals after recompression when the amplifier is operated in saturation.......Fiber optical parametric chirped pulse amplification is experimentally compared for different chirped pulses in the picosecond regime. The amplified chirped pulses show distortion appearing as pedestals after recompression when the amplifier is operated in saturation....

Investigation of the electronic and magnetic structure of thin layer FeTe on Bi{sub 2}Te{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Cornils, Lasse; Manna, Sujit; Kamlapure, Anand; Haenke, Torben; Wiebe, Jens; Wiesendanger, Roland [Department of Physics, University of Hamburg, Hamburg (Germany); Hu, Jin; Mao, Zhiqiang [Department of Physics, Tulane University, New Orleans (United States); Brummerstedt Iversen, Bo; Hofmann, Philip [Interdisciplinary Nanoscience Center iNANO, Aarhus University (Denmark)

2016-07-01

The surprising discovery of Fe based superconductors in 2008 lead to a big effort in finding new materials with very high critical temperatures. One good example are Fe-chalcogenides. Although the parent compound FeTe is not superconducting, the situation changes drastically on interfacing the material with other substrates. Recently He and coworkers found zero resistance at the interface of Bi{sub 2}Te{sub 3} films grown on bulk FeTe, which showed a transition temperature of 12 K. In this talk we present our latest results on our investigation of the electronic and magnetic nature of epitaxially grown FeTe thin films on the topological insulator Bi{sub 2}Te{sub 3} using spin-polarized scanning tunneling microscopy and spectroscopy. Up to several monolayers of FeTe, an antiferromagnetic structure similar to the one observed on its bulk compound FeTe was clearly visible. Surprisingly we found a gap around the Fermi level indicating proximity to superconductivity in coexistence with magnetism on the nanoscale.

Anomalous Phase Change in [(GeTe)2/(Sb2Te3)]20 Superlattice Observed by Coherent Phonon Spectroscopy

Science.gov (United States)

Makino, K.; Saito, Y.; Mitrofanov, K.; Tominaga, J.; Kolobov, A. V.; Nakano, T.; Fons, P.; Hase, M.

The temperature-dependent ultrafast coherent phonon dynamics of topological (GeTe)2/(Sb2Te3) super lattice phase change memory material was investigated. By comparing with Ge-Sb-Te alloy, a clear contrast suggesting the unique phase change behavior was found.

Preparation of CdxHg1-xTe films by the method of vapour-phase epitaxy of HgTe on CdTe substrates with subsequent mutual diffusion

International Nuclear Information System (INIS)

Varavin, V.S.; Sidorov, Yu.G.; Remesnik, V.G.; Chikichev, S.I.; Nis, I.E.

1994-01-01

Mirror-like HgTe films have been grown on CdTe substrates of various orientations by vapor deposition of HgTe in temperature gradient. Deposition rates fell in the range of 5-12 μm/h. Subsequent annealing has permitted production of Hg 1-x Cd x Te layers about 15 μm in thickness. Canier density in annealed n-type specimens has been found to constitute (1-20)x10 15 cm -3 at carrier mobility of (2-5)x10 4 cm 2 xV -1 xs -1 and in p-type films - (1-5)x10 16 cm -3 and 200-350 cm 2 xV -1 xs -1 (77 K) respectively

Measurements of low noise 64 channel counting ASIC for Si and CdTe strip detectors

International Nuclear Information System (INIS)

Kachel, M; Grybos, P; Szczygiel, R; Takeyoshi, T

2011-01-01

We present the design and performance of a 64-channel ASIC called SXDR64. The circuit is intended to work with DC coupled CdTe detectors as well as with standard AC coupled Si detectors. A single channel of the ASIC consists of a charge sensitive amplifier with a pole-zero cancellation circuit, a 4 th order programmable shaper, a base-line restorer and two independent discriminators with 20-bit counters equipped with RAM. The circuit is able to operate correctly with both polarities of the input signal and the detectors leakage current in a few nA range, with the average rate of input pulses up to 1 Mcps.

Application of an energy saving installation concept for the flower bulb business Nic van Schagen in Bergen (NH), Netherlands. Feasibility study; Toepassing van een energiebesparend installatieconcept op het bloembollenbedrijf Nic van Schagen in Bergen (NH). Haalbaarheidsonderzoek

Energy Technology Data Exchange (ETDEWEB)

NONE

2005-05-15

This document aims to consider a practically and widely applicable energy saving energy concept for the title company, both for content and financially. The proposed energy saving installation concept consists of the following four components: UTES(Underground Thermal Energy Storage); electric compression heat pump(s); water-conveying energy roof (solar roof); and Low Temperature (LT) heating system [Dutch] Dit document heeft tot doel om een praktisch en breed toepasbaar energiebesparend installatieconcept inhoudelijk en financieel te beschouwen voor het titel bedrijf. Het voorgestelde energiebesparende installatieconcept bestaat op hoofdlijnen uit de volgende vier onderdelen: KWO (Ondergrondse Koude- en Warmte Opslag); Elektrisch aangedreven compressiewarmtepomp(en); Watervoerend energiedak (zonnedak); en Laag Temperatuur (LT) afgiftesysteem.

Updating the induction module from single-pulse to double-pulses

International Nuclear Information System (INIS)

Huang Ziping; Wang Huacen; Deng Jianjun

2002-01-01

A double-pulse Linear Induced Accelerator (LIA) module is reconstructed based on a usual simple-pulse LIA module. By changing the length of one of the cables between the inductive cell and the Blumlein pulse forming line, two induction pulses with 90 ns FWHM and 150 kV pulse voltage are generated by the ferrite cores inductive cell. The interval time of the pulses is adjustable by changing the lengths of the cable

Evaluation of bipolar pulse generator for high-purity pulsed ion beam

International Nuclear Information System (INIS)

Ito, H.; Kitamura, I.; Masugata, K.

2008-01-01

A new type of pulsed ion beam accelerator named 'bipolar pulse accelerator (BPA)' has been proposed in order to improve the purity of intense pulsed ion beams. To confirm the principle of the BPA, we developed a bipolar pulse generator, which consists of a Marx generator and a pulse forming line (PFL) with a rail gap switch on its end. In this article, we report the experimental results of the bipolar pulse and evaluate the electrical characteristics of the bipolar pulse generator. When the bipolar pulse generator was operated at 70% of the full charge condition of the PEL, the bipolar pulse with the first (-138 kV, 72 ns) and the second pulse (+130 kV, 70 ns) was successfully obtained. The evaluation of the electrical characteristics indicates that the developed generator can produce the bipolar pulse with fast rise time and sharp reversing time. At present the bipolar pulse generator is installed in the B y type magnetically insulated ion diode and we carry out the experiment on the production of an intense pulsed ion beam by the bipolar pulse accelerator. (author)

Surface passivation for CdTe devices

Energy Technology Data Exchange (ETDEWEB)

Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

2017-08-01

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Design principles for HgTe based topological insulator devices

Science.gov (United States)

Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Povolotskyi, Michael; Klimeck, Gerhard

2013-07-01

The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier (CdTe) and well-region (HgTe) are altered by replacing them with the alloy CdxHg1-xTe of various stoichiometries, the critical width can be changed. The critical quantum well width is shown to depend on temperature, applied stress, growth directions, and external electric fields. Based on these results, a novel device concept is proposed that allows to switch between a normal semiconducting and topological insulator state through application of moderate external electric fields.

Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targets

Energy Technology Data Exchange (ETDEWEB)

Mendoza-Galván, A., E-mail: amendoza@qro.cinvestav.mx [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Laboratory of Applied Optics, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Arreola-Jardón, G. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Karlsson, L.H.; Persson, P.O.Å. [Thin Film Physics Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Jiménez-Sandoval, S. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico)

2014-11-28

The effective complex dielectric function (ε) of Cu and O containing CdTe thin films is reported in the spectral range of 0.05 to 6 eV. The films were fabricated by rf sputtering from targets comprised by a mixture of CdTe and CuO powders with nominal Cu and O concentrations in the range of 2–10 at.%. Low concentration levels improved the crystalline quality of the films. Spectroscopic ellipsometry and transmittance measurements were used to determine ε. The critical point energies E{sub 1}, E{sub 1} + Δ{sub 1}, and E{sub 2} of CdTe are red-shifted with the incorporation of Cu and O. Also, an absorption band is developed in the infrared range which is associated with a mixture of CdTe and low resistivity phases Cu{sub 2−x}Te according to an effective medium analysis. The elemental distribution of the films was mapped by energy dispersive X-ray spectroscopy using scanning transmission electron microscopy. - Highlights: • Incorporation of 2 to 10 at.% of Cu and O atoms in CdTe films • Improved crystalline quality with 2 and 3 at.% of Cu and O • Complex dielectric function of Cu and O containing CdTe thin films • Effective medium modeling of below band-gap absorption.

CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

CERN Document Server

Ricq, S; Garcin, M

2000-01-01

The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

Cooled CdZnTe detectors for X-ray astronomy

CERN Document Server

Bale, G; Seller, P; Lowe, B

1999-01-01

Recent results combining thermoelectrically cooled CdZnTe detectors with a low-noise Pentafet preamplifier are presented. Cooling between -30 deg. C and -40 deg. C reduces the leakage current of the detectors and allows the use of a pulsed reset preamplifier and long shaping times, significantly improving the energy resolution. Mn K subalpha X-rays at 5.9 keV have been observed with a resolution of less than 280 eV FWHM and a peak to background of more than 200:1. The Fano factor of the material has been estimated at 0.11+-0.012 at -40 deg. C. The detector requirement for X-ray astronomy will be a photon-counting imaging spectrometer. A 16x16 element, bump bonded pixel detector is described and results from a prototype silicon array presented. The detector is constructed with ASIC amplifiers with a system noise of <25 electrons rms and should give an energy resolution comparable to the Pentafet results presented here.

Optimization of Monocrystalline MgxCd1-xTe/MgyCd1-yTe Double-Heterostructure Solar Cells

Science.gov (United States)

Becker, Jacob J.

Polycrystalline CdS/CdTe solar cells continue to dominate the thin-film photovoltaics industry with an achieved record efficiency of over 22% demonstrated by First Solar, yet monocrystalline CdTe devices have received considerably less attention over the years. Monocrystalline CdTe double-heterostructure solar cells show great promise with respect to addressing the problem of low Voc with the passing of the 1 V benchmark. Rapid progress has been made in driving the efficiency in these devices ever closer to the record presently held by polycrystalline thin-films. This achievement is primarily due to the utilization of a remote p-n heterojunction in which the heavily doped contact materials, which are so problematic in terms of increasing non-radiative recombination inside the absorber, are moved outside of the CdTe double heterostructure with two MgyCd1-yTe barrier layers to provide confinement and passivation at the CdTe surfaces. Using this design, the pursuit and demonstration of efficiencies beyond 20% in CdTe solar cells is reported through the study and optimization of the structure barriers, contacts layers, and optical design. Further development of a wider bandgap MgxCd1-xTe solar cell based on the same design is included with the intention of applying this knowledge to the development of a tandem solar cell constructed on a silicon subcell. The exploration of different hole-contact materials--ZnTe, CuZnS, and a-Si:H--and their optimization is presented throughout the work. Devices utilizing a-Si:H hole contacts exhibit open-circuit voltages of up to 1.11 V, a maximum total-area efficiency of 18.5% measured under AM1.5G, and an active-area efficiency of 20.3% for CdTe absorber based devices. The achievement of voltages beyond 1.1V while still maintaining relatively high fill factors with no rollover, either before or after open-circuit, is a promising indicator that this approach can result in devices surpassing the 22% record set by polycrystalline

Pulse-shaping strategies in short-pulse fiber amplifiers

Energy Technology Data Exchange (ETDEWEB)

Schimpf, Damian Nikolaus

2010-02-09

Ultrashort pulse lasers are an important tool in scientific and industrial applications. However, many applications are demanding higher average powers from these ultrashort pulse sources. This can be achieved by combining direct diode pumping with novel gain media designs. In particular, ultrashort pulse fiber lasers are now delivering average powers in the kW range. However, the design of fiber lasers, producing pulses with high peak-powers, is challenging due to the impact of nonlinear effects. To significantly reduce these detrimental effects in ultrashort pulse fiber amplifers, the combination of chirped pulse amplification (CPA) and large mode area fibers is employed. Using these methods, the pulse energy of fiber lasers has been steadily increasing for the past few years. Recently, a fiber-based CPA-system has been demonstrated which produces pulse energies of around 1 mJ. However, both the stretching and the enlargement of the mode area are limited, and therefore, the impact of nonlinearity is still noticed in systems employing such devices. The aim of this thesis is the analysis of CPA-systems operated beyond the conventional nonlinear limit, which corresponds to accumulated nonlinear phase-shifts around 1 rad. This includes a detailed discussion of the influence of the nonlinear effect self-phase modulation on the output pulse of CPA-systems. An analytical model is presented. Emphasis is placed on the design of novel concepts to control the impact of self-phase modulation. Pulse-shaping is regarded as a powerful tool to accomplish this goal. Novel methods to control the impact of SPM are experimentally demonstrated. The design of these concepts is based on the theoretical findings. Both amplitude- and phase-shaping are studied. Model-based phase-shaping is implemented in a state-of-the-art fiber CPA-system. The influence of the polarization state is also highlighted. Additionally, existing techniques and recent advances are put into context. (orig.)

Pulse-shaping strategies in short-pulse fiber amplifiers

International Nuclear Information System (INIS)

Schimpf, Damian Nikolaus

2010-01-01

Ultrashort pulse lasers are an important tool in scientific and industrial applications. However, many applications are demanding higher average powers from these ultrashort pulse sources. This can be achieved by combining direct diode pumping with novel gain media designs. In particular, ultrashort pulse fiber lasers are now delivering average powers in the kW range. However, the design of fiber lasers, producing pulses with high peak-powers, is challenging due to the impact of nonlinear effects. To significantly reduce these detrimental effects in ultrashort pulse fiber amplifers, the combination of chirped pulse amplification (CPA) and large mode area fibers is employed. Using these methods, the pulse energy of fiber lasers has been steadily increasing for the past few years. Recently, a fiber-based CPA-system has been demonstrated which produces pulse energies of around 1 mJ. However, both the stretching and the enlargement of the mode area are limited, and therefore, the impact of nonlinearity is still noticed in systems employing such devices. The aim of this thesis is the analysis of CPA-systems operated beyond the conventional nonlinear limit, which corresponds to accumulated nonlinear phase-shifts around 1 rad. This includes a detailed discussion of the influence of the nonlinear effect self-phase modulation on the output pulse of CPA-systems. An analytical model is presented. Emphasis is placed on the design of novel concepts to control the impact of self-phase modulation. Pulse-shaping is regarded as a powerful tool to accomplish this goal. Novel methods to control the impact of SPM are experimentally demonstrated. The design of these concepts is based on the theoretical findings. Both amplitude- and phase-shaping are studied. Model-based phase-shaping is implemented in a state-of-the-art fiber CPA-system. The influence of the polarization state is also highlighted. Additionally, existing techniques and recent advances are put into context. (orig.)

Pulse Generator

Science.gov (United States)

Greer, Lawrence (Inventor)

2017-01-01

An apparatus and a computer-implemented method for generating pulses synchronized to a rising edge of a tachometer signal from rotating machinery are disclosed. For example, in one embodiment, a pulse state machine may be configured to generate a plurality of pulses, and a period state machine may be configured to determine a period for each of the plurality of pulses.

Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

International Nuclear Information System (INIS)

Hua-Jun, Sun; Li-Song, Hou; Yi-Qun, Wu; Xiao-Dong, Tang

2009-01-01

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge 1 Sb 4 Te 7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude

Plasma kinetics and biodistribution of water-soluble CdTe quantum dots in mice: a comparison between Cd and Te

International Nuclear Information System (INIS)

Han Ying; Xie Guangyun; Sun Zhiwei; Mu Ying; Han Sihai; Xiao Yang; Liu Na; Wang Hui; Guo Caixia; Shi Zhixiong; Li Yanbo; Huang Peili

2011-01-01

Water-soluble quantum dots (QDs) have shown potential as tumor diagnostic agents. However, little is known about their biological behaviors in vivo. Male ICR mice were intravenously given a single dose (2.5 μmol kg −1 body weight) of water-soluble cadmium–telluride (CdTe) QDs (the QDs are approximately 4 nm in diameter and have maximal emission at 630 nm). Inductively coupled plasma mass spectrometry (ICP-MS) was used for measuring the kinetic action of 111 Cd and 125 Te for 7 days. The plasma kinetics of Cd and Te followed a two-compartment model, in which Cd exhibited greater apparent volume of distribution, greater clearance, faster distribution half-life, and significantly slower elimination half-life compared to Te. Contrary to its relatively transient fate in the plasma, high levels of Cd persisted in the liver and kidneys. Te accumulated primarily in the spleen. The different plasma kinetics and distribution patterns of Cd and Te imply that CdTe QDs have been part of the degradation or aggregation in vivo.

Thermopower of thermoelectric materials with resonant levels: PbTe:Tl versus PbTe:Na and Cu1 -xNix

Science.gov (United States)

Wiendlocha, Bartlomiej

2018-05-01

Electronic transport properties of thermoelectric materials containing resonant levels are discussed by analyzing the two best known examples: copper-nickel metallic alloy (Cu-Ni, constantan) and thallium-doped lead telluride (PbTe:Tl). As a contrasting example of a material with a nonresonant impurity, sodium-doped PbTe is considered. Theoretical calculations of the electronic structure, Bloch spectral functions, and energy-dependent electrical conductivity at T =0 K are done using the Korringa-Kohn-Rostoker method with the coherent potential approximation and the Kubo-Greenwood formalism. The effect of a resonance on the residual resistivity and electronic lifetimes in PbTe is analyzed. By using the full Fermi integrals, room-temperature thermopower is calculated, confirming its increase in PbTe:Tl versus PbTe:Na, due to the presence of the resonant level. In addition, our calculations support the self-compensation model, in which the experimentally observed reduction of carrier concentration in PbTe:Tl against the nominal one is explained by the presence of n -type Te vacancies.

Deposition of polycrystalline Cd{sub 1-x}Zn{sub x} Te films on ZnTe/graphite and graphite substrates by close-spaced sublimation

Energy Technology Data Exchange (ETDEWEB)

Okamoto, Tamotsu; Akiba, Sho; Takahashi, Kohei; Nagatsuka, Satsuki; Kanda, Yohei [Department of Electrical and Electronic Engineering, Kisarazu National College of Technology, 2-11-1 Kiyomidai-higashi, Kisarazu, Chiba 292-0041 (Japan); Tokuda, Satoshi; Kishihara, Hiroyuki; Sato, Toshiyuki [Technology Research Laboratory, Shimadzu Corporation, 3-9-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan)

2014-07-15

The effects of a ZnTe layer on the deposition of a Cd{sub 1-x}Zn{sub x}Te (CZT) layer in the initial stage of the close-spaced sublimation (CSS) deposition were investigated. The deposition rate was almost constant in the initial stage of the CdTe deposition on the ZnTe/graphite substrates. However, the deposition rate within 1 minute was lower than that after 1 minute in the CdTe deposition on graphite substrates. This result suggests that nucleation of CdTe directly deposited on graphite substrate is difficult when compared to that with a ZnTe layer. Furthermore, the effects of CdCl{sub 2} and ZnTe additions to the CdTe sources in the CSS deposition were also investigated. Both the grain size and the intensity of donor-acceptor pair (DAP) emission in photoluminescence (PL) spectra were decreased by the effect of CdCl{sub 2} addition. Zn content in CZT films was controlled by the ZnTe ratio in the CdTe/ZnTe powder sources. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Reduction in thermal conductivity of BiSbTe lump

Energy Technology Data Exchange (ETDEWEB)

Ahmad, Kaleem [King Saud University, Sustainable Energy Technologies Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia); Wan, C. [Tsinghua University, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Beijing (China); Al-Eshaikh, M.A.; Kadachi, A.N. [King Saud University, Research Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia)

2017-03-15

In this work, systematic investigations on the thermal conductivities of BiSbTe lump, microstructured pristine BiSbTe bulk and single wall carbon nanotubes (SWCNTs)/BiSbTe bulk nanocomposites were performed. BiSbTe lumps were crushed to form a coarse powder (200 μm) and effect of particle size reduction on the effective thermal conductivity of BiSbTe (200 μm) bulk were analyzed. For further reduction in the conductivity, a two pronged strategy has been employed. First, additional refinement of BiSbTe (200 μm) were performed through ball milling in an inert environment. Second, SWCNTs in 0.75, and 1.0 vol% were distributed uniformly in the fine BiSbTe ball milled powder. The results showed that the effective thermal conductivities decrease with the reduction in the particle size from lump to BiSbTe (200 μm) bulk as well as with the addition of SWCNTs accompanied by further refinement of BiSbTe particles. The significant reduction in thermal conductivities of the lump was achieved for pure BiSbTe (200 μm) bulk and 0.75 vol% of SWCNTs/BiSbTe composite. This can be ascribed to the enhanced phonon scattering by the grain boundaries between the nanostructured BiSbTe particles as well as the interfaces between BiSbTe and the low dimensional carbon nanotubes. (orig.)

Nonperturbative measurement of the local magnetic field using pulsed polarimetry for fusion reactor conditions (invited).

Science.gov (United States)

Smith, Roger J

2008-10-01

A novel diagnostic technique for the remote and nonperturbative sensing of the local magnetic field in reactor relevant plasmas is presented. Pulsed polarimetry [Patent No. 12/150,169 (pending)] combines optical scattering with the Faraday effect. The polarimetric light detection and ranging (LIDAR)-like diagnostic has the potential to be a local B(pol) diagnostic on ITER and can achieve spatial resolutions of millimeters on high energy density (HED) plasmas using existing lasers. The pulsed polarimetry method is based on nonlocal measurements and subtle effects are introduced that are not present in either cw polarimetry or Thomson scattering LIDAR. Important features include the capability of simultaneously measuring local T(e), n(e), and B(parallel) along the line of sight, a resiliency to refractive effects, a short measurement duration providing near instantaneous data in time, and location for real-time feedback and control of magnetohydrodynamic (MHD) instabilities and the realization of a widely applicable internal magnetic field diagnostic for the magnetic fusion energy program. The technique improves for higher n(e)B(parallel) product and higher n(e) and is well suited for diagnosing the transient plasmas in the HED program. Larger devices such as ITER and DEMO are also better suited to the technique, allowing longer pulse lengths and thereby relaxing key technology constraints making pulsed polarimetry a valuable asset for next step devices. The pulsed polarimetry technique is clarified by way of illustration on the ITER tokamak and plasmas within the magnetized target fusion program within present technological means.

Pulsed water jet generated by pulse multiplication

Czech Academy of Sciences Publication Activity Database

Dvorský, R.; Sitek, Libor; Sochor, T.

2016-01-01

Roč. 23, č. 4 (2016), s. 959-967 ISSN 1330-3651 R&D Projects: GA MŠk(CZ) LO1406; GA MŠk ED2.1.00/03.0082 Institutional support: RVO:68145535 Keywords : high- pressure pulses * pulse intensifier * pulsed water jet * water hammer effect Subject RIV: JQ - Machines ; Tools Impact factor: 0.723, year: 2016 http://hrcak.srce.hr/163752?lang=en

Anomalous phase change characteristics in Fe-Te materials

International Nuclear Information System (INIS)

Fu, X. T.; Song, W. D.; Ji, R.; Ho, H. W.; Wang, L.; Hong, M. H.

2012-01-01

Phase change materials have become significantly attractive due to its unique characteristics for its extensive applications. In this paper, a kind of phase change material, which consists of Fe and Te components, is developed. The crystallization temperature of the Fe-Te materials is 180 deg. C for Fe 1.19 Te and can be adjusted by the Fe/Te ratio. High-speed phase change in the Fe-Te materials has been demonstrated by nanosecond laser irradiation. Comparing to conventional phase change materials, the Fe-Te materials exhibit an anomalous optical property that has higher reflectivity at amorphous than crystalline state, which is useful for data storage design.

Simulated gamma-ray pulse profile of the Crab pulsar with the Cherenkov Telescope Array

Science.gov (United States)

Burtovoi, A.; Zampieri, L.

2016-07-01

We present simulations of the very high energy (VHE) gamma-ray light curve of the Crab pulsar as observed by the Cherenkov Telescope Array (CTA). The CTA pulse profile of the Crab pulsar is simulated with the specific goal of determining the accuracy of the position of the interpulse. We fit the pulse shape obtained by the Major Atmospheric Gamma-Ray Imaging Cherenkov (MAGIC) telescope with a three-Gaussian template and rescale it to account for the different CTA instrumental and observational configurations. Simulations are performed for different configurations of CTA and for the ASTRI (Astrofisica con Specchi a Tecnologia Replicante Italiana) mini-array. The northern CTA configuration will provide an improvement of a factor of ˜3 in accuracy with an observing time comparable to that of MAGIC (73 h). Unless the VHE spectrum above 1 TeV behaves differently from what we presently know, unreasonably long observing times are required for a significant detection of the pulsations of the Crab pulsar with the high-energy-range sub-arrays. We also found that an independent VHE timing analysis is feasible with Large Size Telescopes. CTA will provide a significant improvement in determining the VHE pulse shape parameters necessary to constrain theoretical models of the gamma-ray emission of the Crab pulsar. One of such parameters is the shift in phase between peaks in the pulse profile at VHE and in other energy bands that, if detected, may point to different locations of the emission regions.

Vibrational properties of homopolar and heteropolar surfaces and interfaces of the CdTe/HgTe system

International Nuclear Information System (INIS)

Rey Gonzalez, R.; Camacho B, A.; Quiroga, L.

1993-08-01

We present results of calculations for the density of vibrational modes for (001) and (111) homopolar, as well as for (011) heteropolar free surfaces of CdTe and HgTe. A rigid-ion model with a dynamical matrix parametrization including force constants up to second neighbours is used. We report on the existence of highly localized surface resonant modes at the top of the acoustic branch for CdTe and the bottom of the optical branch for HgTe. A different behaviour in the three directions analysed is found. The interface atomic planes show themselves as phonon gapless layers. The contribution of in-plane and out-of-plane vibration is analysed for both the surface and interface cases. (author). 7 refs, 7 figs

Detection methods of pulsed X-rays for transmission tomography with a linear accelerator

International Nuclear Information System (INIS)

Glasser, F.

1988-07-01

Appropriate detection methods are studied for the development of a high energy tomograph using a linear accelerator for nondestructive testing of bulky objects. The aim is the selection of detectors adapted to a pulsed X-ray source and with a good behavior under X-ray radiations of several MeV. Performance of semiconductors (HgI 2 , Cl doped CdTe, GaAs, Bi 12 Ge0 20 ) and a scintillator (Bi 4 Ge 3 0 12 ) are examined. A prototype tomograph gave images that show the validity of detectors for analysis of medium size equipment such as a concrete drum of 60 cm in diameter [fr

Tellurium sulfates from reactions in oleum and sulfur trioxide: syntheses and crystal structures of TeO(SO_4), Te_4O_3(SO_4)_5, and Te(S_2O_7)_2

International Nuclear Information System (INIS)

Logemann, Christian; Bruns, Joern; Schindler, Lisa Verena; Zimmermann, Vanessa; Wickleder, Mathias S.

2015-01-01

The reaction of K_2TeO_4 with fuming sulfuric acid (65 % SO_3) in sealed glass ampoules at 250 C led to colorless single crystals of TeO(SO_4) [triclinic, P anti 1, Z = 8, a = 819.89(3) pm, b = 836.95(4) pm, c = 1179.12(5) pm, α = 82.820(2) , β = 70.645(2) , γ = 81.897(2) , V = 753.11(6) x 10"6 pm"3]. A horseshoe type [Te_4O_3] fragment is the basic motif in the layer structure of the compound. The [Te_4O_3] moieties are linked to infinite chains by further oxide ions. Monomeric [Te_4O_3] horseshoes are found in the crystal structure of Te_4O_3(SO_4)_5 [trigonal, P3_221, Z = 3, a = 859.05(2) pm, c = 2230.66(7) pm, V = 1425.61(6) x 10"6 pm"3], which was obtained from TeO_2 and fuming sulfuric acid (65 % SO_3) at 200 C as colorless single crystals. By switching to neat SO_3 as reaction medium colorless crystals of Te(S_2O_7)_2 [P2_1/n, Z = 4, a = 1065.25(3) pm, b = 818.50(2) pm, c = 1206.27(3) pm, β = 102.097(1) , V = 1028.40(5) x 10"6 pm"3] form when ortho-telluric acid, H_6TeO_6, is used as the tellurium source. The compound was reported previously, however, obviously with a wrong crystallographic description. In the crystal structure the tellurium atoms are coordinated by two chelating disulfate ions. Further Te-O contacts link the [Te(S_2O_7)_2] units to an extended network. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Studies for Muon Colliders at Center-of-Mass Energies of 10 TeV and 100 TeV

International Nuclear Information System (INIS)

King, Bruce J.

1999-01-01

Parameter lists are presented for speculative muon colliders at center-of-mass energies of 10 TeV and 100 TeV. The technological advances required to achieve the given parameters are itemized and discussed, and a discussion is given of the design goals and constraints. An important constraint for multi-TeV muon colliders is the need to minimize neutrino radiation from the collider ring

Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors

International Nuclear Information System (INIS)

Eisen, Y.

1996-01-01

Improvements of CdTe crystal quality and significant progress in the growth of large ingots of high resistivity CdZnTe material enable the fabrication of larger area detectors in single element form or monolithic arrays. These advances allow for the development of imaging devices of improved spatial resolution for industrial, research and medical applications. CdTe and CdZnTe detectors operate in single photon counting mode or in current mode (charge integrating mode). The paper presents advantages of CdTe and CdZnTe over common scintillator type detectors, but also presents the shortcomings of the former detectors with respect to charge collection which limit the yields of good spectrometers. The paper reviews industrial and research applications utilizing these detectors and in particular describes in detail two imaging systems for security screening and custom inspection. These systems are characterized by large dynamic range and good spatial resolution and are composed of large arrays of CdTe spectrometers and discriminator grade detectors. A wide energy range detector assembly, for astrophysical research of gamma ray bursts composed of CdTe, HgI 2 and CdZnTe spectrometers in two dimensional arrays is also presented. (orig.)

Pulsed TRIGA reactor as substitute for long pulse spallation neutron source

International Nuclear Information System (INIS)

Whittemore, W.L.

1999-01-01

TRIGA reactor cores have been used to demonstrate various pulsing applications. The TRIGA reactor fuel (U-ZrH x ) is very robust especially in pulsing applications. The features required to produce 50 pulses per second have been successfully demonstrated individually, including pulse tests with small diameter fuel rods. A partially optimized core has been evaluated for pulses at 50 Hz with peak pulsed power up to 100 MW and an average power up to 10 MW. Depending on the design, the full width at half power of the individual pulses can range between 2000 μsec to 3000 μsec. Until recently, the relatively long pulses (2000 μsec to 3000 μsec) from a pulsed thermal reactor or a long pulse spallation source (LPSS) have been considered unsuitable for time-of-flight measurements of neutron scattering. More recently considerable attention has been devoted to evaluating the performance of long pulse (1000 to 4000 μs) spallation sources for the same type of neutron measurements originally performed only with short pulses from spallation sources (SPSS). Adequate information is available to permit meaningful comparisons between CW, SPSS, and LPSS neutron sources. Except where extremely high resolution is required (fraction of a percent), which does require short pulses, it is demonstrated that the LPSS source with a 1000 msec or longer pulse length and a repetition rate of 50 to 60 Hz gives results comparable to those from the 60 MW ILL (CW) source. For many of these applications the shorter pulse is not necessarily a disadvantage, but it is not an advantage over the long pulse system. In one study, the conclusion is that a 5 MW 2000 μsec LPSS source improves the capability for structural biology studies of macromolecules by at least a factor of 5 over that achievable with a high flux reactor. Recent studies have identified the advantages and usefulness of long pulse neutron sources. It is evident that the multiple pulse TRIGA reactor can produce pulses comparable to

Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator

Science.gov (United States)

Dzyadukh, S. M.; Voitsekhovskii, A. V.; Nesmelov, S. N.; Sidorov, G. Yu.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.

2018-03-01

Admittance of MIS structures based on n( p)- Hg1-xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe layer during epitaxy results in the almost complete disappearance of the hysteresis of electrophysical characteristics of MIS structures based on graded-gap n-HgCdTe for a small range of the voltage variation. For a wide range of the voltage variation, the hysteresis of the capacitance-voltage characteristics appears for MIS structures based on n-HgCdTe with the CdTe/Al2O3 insulator. However, the hysteresis mechanism differs from that in case of a single-layer Al2O3 insulator. For MIS structures based on p-HgCdTe, introduction of an additional CdTe layer does not lead to a significant decrease of the hysteresis phenomena, which may be due to the degradation of the interface properties when mercury leaves the film as a result of low-temperature annealing changing the conductivity type of the semiconductor.

Method for pulse to pulse dose reproducibility applied to electron linear accelerators

International Nuclear Information System (INIS)

Ighigeanu, D.; Martin, D.; Oproiu, C.; Cirstea, E.; Craciun, G.

2002-01-01

An original method for obtaining programmed beam single shots and pulse trains with programmed pulse number, pulse repetition frequency, pulse duration and pulse dose is presented. It is particularly useful for automatic control of absorbed dose rate level, irradiation process control as well as in pulse radiolysis studies, single pulse dose measurement or for research experiments where pulse-to-pulse dose reproducibility is required. This method is applied to the electron linear accelerators, ALIN-10 of 6.23 MeV and 82 W and ALID-7, of 5.5 MeV and 670 W, built in NILPRP. In order to implement this method, the accelerator triggering system (ATS) consists of two branches: the gun branch and the magnetron branch. ATS, which synchronizes all the system units, delivers trigger pulses at a programmed repetition rate (up to 250 pulses/s) to the gun (80 kV, 10 A and 4 ms) and magnetron (45 kV, 100 A, and 4 ms).The accelerated electron beam existence is determined by the electron gun and magnetron pulses overlapping. The method consists in controlling the overlapping of pulses in order to deliver the beam in the desired sequence. This control is implemented by a discrete pulse position modulation of gun and/or magnetron pulses. The instabilities of the gun and magnetron transient regimes are avoided by operating the accelerator with no accelerated beam for a certain time. At the operator 'beam start' command, the ATS controls electron gun and magnetron pulses overlapping and the linac beam is generated. The pulse-to-pulse absorbed dose variation is thus considerably reduced. Programmed absorbed dose, irradiation time, beam pulse number or other external events may interrupt the coincidence between the gun and magnetron pulses. Slow absorbed dose variation is compensated by the control of the pulse duration and repetition frequency. Two methods are reported in the electron linear accelerators' development for obtaining the pulse to pulse dose reproducibility: the method

Bouwlogistieke innovaties weerbarstig te implementeren

NARCIS (Netherlands)

Ludema, M.W.; Vries, A.M.R.

2015-01-01

Toelevering van bouwmaterialen aan bouwprojecten is complex en verregaande gesegregeerd. De bouwsector staat voor een kans te innoveren op het vlak van de bouwlogistiek. In het verleden is ervaring opgedaan met ‘best-practices’ die voldoende kansen bieden de noodzakelijk innovatie door te voeren.

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography

International Nuclear Information System (INIS)

Ricq, St.

1999-01-01

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

HgCdTe photovoltaic detectors on Si substrates

International Nuclear Information System (INIS)

Zanio, K.R.; Bean, R.C.

1988-01-01

HgCdTe photovoltaic detectors have been fabricated on Si substrates through intermediate CdTe/GaAs layers. Encapsulation of the GaAs between the CdTe and Si prevents unintentional doping of the HgCdTe by Ga and As. Uniform epitaxial GaAs is grown on three inch diameter Si substrates. Detectors on such large area Si substrates will offer hybrid focal plane arrays whose dimensions are not limited by the difference between the coefficients of thermal expansion of the Si signal processor and the substrate for the HgCdTe detector array. The growth of HgCdTe detectors on the Si signal processors for monolithic focal plane arrays is also considered. 40 references

Narrowband pulse-enhanced upconversion of chirped broadband pulses

International Nuclear Information System (INIS)

Zhao, Kun; Yuan, Peng; Zhong, Haizhe; Zhang, Dongfang; Zhu, Heyuan; Qian, Liejia; Chen, Liezun; Wen, Shuangchun

2010-01-01

We propose and demonstrate an efficient sum-frequency mixing scheme based on narrowband and chirped broadband pulses. It combines the advantages of wider spectral acceptance bandwidth and of alleviating the temporal walk-off, which are both beneficial to higher conversion efficiency. Chirped sum-frequency pulses at 455 nm with energy up to 360 µJ, corresponding to a conversion efficiency of ∼ 40%, are obtained and the pulses can be compressed to ∼ 110 fs. The sum-frequency mixing scheme may provide a promising route to the efficient generation of deep-ultraviolet femtosecond pulses

Piezomodulated reflectivity on CdMnTe/CdTe quantum well structures as a new standard characterization method

Energy Technology Data Exchange (ETDEWEB)

Kurtz, E.; Schmitt, K.; Hommel, D.; Waag, A.; Bicknell-Tassius, R.N.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

1993-01-30

Piezomodulated reflectivity (PZR) measurements are reported for the first time as a standard characterization method for CdMnTe/CdTe single (SQW) and multiple (MQW) quantum wells grown by molecular beam epitaxy on CdTe substrates 1 mm thick. Previously, modulation spectroscopy studies of II-VI structures required thin substrates which needed special preparation. In this paper we present studies of optical properties of CdMnTe/CdTe SQWs and MWQs using the PZR technique. The samples, mounted on a sinusoidally driven piezoelectric transducer are subjected to an alternating strain. Exploiting ''lock-in'' techniques, the first derivative of the reflectivity is measured directly. Specific electronic transitions, e.g. excitons, are well resolved in the modulated spectrum and can be easily identified. This makes PZR a very sensitive and powerful tool for the characterization of quantum well structures, and a useful complement to other standard techniques such as photoluminescence and excitation spectroscopy. (orig.).

A basic component for ISGRI, the CdTe gamma camera on board the INTEGRAL satellite

International Nuclear Information System (INIS)

Arques, M.; Baffert, N.; Lattard, D.

1999-01-01

A basic component, called Polycell, has been developed for the ISGRI (INTEGRAL Soft Gamma Ray Imager) CdTe camera on board the INTEGRAL (INTErnational Gamma-Ray Astrophysics Laboratory) satellite. Operating at room temperature, it covers the 20 keV--1 MeV energy range. It features a sub-ensemble of 16 CdTe detectors and their associated front end electronics. This electronics is based on 4-channel analog-digital ASICs. Their analog part features a low noise preamplifier, allowing a threshold below 20 keV and a pulse rise-time measurement which permits a charge loss correction. The digital part ensures the internal acquisition timing sequence as well as the dialogue with external electronics. Two versions of the ISGRI ASIC have been developed in a collaboration of two CEA microelectronics teams from CEA/DTA/LETI/DSYS and CEA/DSM/DAPNIA/SEI, respectively on a standard CMOS AMS process hardened against radiation by lay-out, and on a Silicon On Insulator process (DMILL MHS), the latter being latch-up free. This paper presents the ASIC and polycell architecture as well as experimental results obtained with polycells equipped with AMS ASICs

Performance of CdZnTe strip detectors as sub-millimeter resolution imaging gamma radiation spectrometers

International Nuclear Information System (INIS)

Mayer, M.; Boykin, D.V.; Drake, A.

1996-01-01

We report γ-ray detection performance measurements and computer simulations of a sub-millimeter pitch CdZnTe strip detector. The detector is a prototype for γ-ray astronomy measurements in the range of 20-200 keV. The prototype is a 1.5 mm thick, 64 x 64 orthogonal stripe CdZnTe detector of 0.375 mm pitch in both dimensions, with approximately one square inch of sensitive area. Using discrete laboratory electronics to process signals from 8 x 8 stripe region of the prototype we measured good spectroscopic uniformity and sub-pitch (∼ 0.2 mm) spatial resolution in both x and y dimensions. We present below measurements of the spatial uniformity, relative timing and pulse height of the anode and cathode signals, and the photon detection efficiency. We also present a technique for determining the location of the event in the third dimension (depth). We simulated the photon interactions and signal generation in the strip detector and the test electronics and we compare these results with the data. The data indicate that cathode signal - as well as the anode signal - arises more strongly from the conduction electrons rather than the holes

In situ study on the formation of FeTe

DEFF Research Database (Denmark)

Grivel, Jean-Claude; Wulff, Anders Christian; Yue, Zhao

2011-01-01

The formation of the FeTe compound from a mixture of Fe and Te powders was studied in situ by means of high-energy synchrotron X-ray diffraction. FeTe does not form directly from the starting elements; instead, FeTe2 forms as an intermediate product. During a 2 °C/min heating ramp, Te first reacts...

International Year of Pulses 2016 | 2016 International Year of Pulses

Science.gov (United States)

the Year in collaboration with Governments, relevant organizations, non-governmental organizations and the composition of pulses Image 4 Wrapping up the International Year of Pulses The 5 key messages to food security Infographic Pulses and climate change International Year of Pulses 2016 The 68th UN

Strong coupling and polariton lasing in Te based microcavities embedding (Cd,Zn)Te quantum wells

Energy Technology Data Exchange (ETDEWEB)

Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Piętka, B.; Król, M.; Mirek, R.; Lekenta, K.; Szczytko, J.; Borysiuk, J.; Suffczyński, J.; Kazimierczuk, T.; Goryca, M.; Smoleński, T.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland)

2015-11-16

We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already for the structure containing a single quantum well. Embedding four unstrained quantum wells results in further enhancement of the exciton-photon coupling and the polariton lasing in the strong coupling regime.

Optical spectroscopy and Fermi surface studies of BiTeCl and BiTeBr

Science.gov (United States)

Martin, Catalin; Suslov, A. V.; Buvaev, S.; Hebard, A. F.; Bugnon, Philippe; Berger, Helmuth; Magrez, Arnaud; Tanner, D. B.

2014-03-01

The observation of a large bulk Rashba effect in the non-centrosymmetric semiconductors BiTeX(X=Cl, Br, I) has stimulated the interest in these sys- tems, as promising candidates for studying spin related phenomena and for the realization of spin devices. Here we present a comparative study of the electronic properties of BiTeCl and BiTeBr, determined from temperature dependent infrared spectroscopy and Shubnikov-de Haas oscillations. In par- ticular, we compare the angle dependence of quantum oscillations between the two compounds and discuss possible differences between the topology of their Fermi surfaces. Supported by NSF Cooperative Agreement DMR-1157490 to the National High Magnetic Field Laboratory.

Programmable pulse generator

International Nuclear Information System (INIS)

Xue Zhihua; Lou Binqiao; Duan Xiaohui

2002-01-01

The author introduces the design of programmable pulse generator that is based on a micro-controller and controlled by RS232 interface of personal computer. The whole system has good stability. The pulse generator can produce TTL pulse and analog pulse. The pulse frequency can be selected by EPLD. The voltage amplitude and pulse width of analog pulse can be adjusted by analog switches and digitally-controlled potentiometers. The software development tools of computer is National Instruments LabView5.1. The front panel of this virtual instrumentation is intuitive and easy-to-use. Parameters can be selected and changed conveniently by knob and slide

Analysis of Etched CdZnTe Substrates

Science.gov (United States)

Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

2016-09-01

State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

Thermoelectric properties of Bi2Te3 base solid solutions in the Bi2Te3-InS system

International Nuclear Information System (INIS)

Safarov, M.G.; Rustamov, P.G.; Alidzhanov, M.A.

1979-01-01

The rich Bi 2 Te 3 part ot the Bi 2 Te 3 -InS constitutional diagram has been studied with a view to produce new Bi 2 Te 3 -based solid solutions and to establish the maximum solubility of InS in Bi 2 Te 3 . The methods of differential-thermal, X-ray phase and microstructural analysis have been used. The alloys microhardness, density and thermal electric properties have been measured. A large region of Bi 2 Te 3 -based restricted solid solutions has been detected; it reaches 14.0 mol.% InS at room temperature. Studied have been the thermoelectromotive forces, electric and thermal conductivity of the alloys, containing up to 5 mol.% InS in the 300-700 K temperature range

High Flux Energy-Resolved Photon-Counting X-Ray Imaging Arrays with CdTe and CdZnTe for Clinical CT

International Nuclear Information System (INIS)

Barber, William C.; Hartsough, Neal E.; Gandhi, Thulasidharan; Iwanczyk, Jan S.; Wessel, Jan C.; Nygard, Einar; Malakhov, Nail; Wawrzyniak, Gregor; Dorholt, Ole; Danielsen, Roar

2013-06-01

We have fabricated fast room-temperature energy dispersive photon counting x-ray imaging arrays using pixellated cadmium zinc (CdTe) and cadmium zinc telluride (CdZnTe) semiconductors. We have also fabricated fast application specific integrated circuits (ASICs) with a two dimensional (2D) array of inputs for readout from the CdZnTe sensors. The new CdTe and CdZnTe sensors have a 2D array of pixels with a 0.5 mm pitch and can be tiled in 2D. The new 2D ASICs have four energy discriminators per pixel with a linear energy response across the entire dynamic range for clinical CT. The ASICs can also be tiled in 2D and are designed to fit within the active area of the 2D sensors. We have measured several important performance parameters including; an output count rate (OCR) in excess of 20 million counts per second per square mm, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor less than 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdTE and CdZnTe sensors incurring very little additional capacitance. We present a comparison of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, and noise floor. (authors)

HgSe(Te)-HgHal2 systems

International Nuclear Information System (INIS)

Pan'ko, V.V.; Khudolij, V.A.; Voroshilov, Yu.V.

1989-01-01

Using the methods of differential thermal and X-ray phase analyses the character of chemical interaction in the systems HgTe(Se)-HgHal 2 , where Hal is Cl, Br, I, is investigated. Formation of compounds Hg 3 Se 2 Hal 2 , Hg 3 Te 2 Hal 2 , Hg 3 TeCl 4 and Hg 3 TeBr 4 in these systems is established. The phase diagrams of the studied systems are presented. The parameters of elementary cells of the compounds with the unknown structure, as well as their unknown physicochemical properties, are determined

Om te staak of nie te staak nie? Die sieninge van 'n aantal swart ...

African Journals Online (AJOL)

Erna Kinsey

sig, is eerstens om ondersoek in te stel na 'n groep swart opvoeders se sieninge oor opvoeders se reg om te staak. Tweedens sal na die redes wat hierdie opvoeders aanvoer waarom hulle al aan stakings deel- geneem het of sal deelneem, gelet word. Derdens sal die redes waarom sommige opvoeders nie sal staak nie, ...

The Ecological And Demographic Imperatives Of Land Fragmentation In Ute Districts of Vandeikya Local Government Area of Benue State, Nigeria

Directory of Open Access Journals (Sweden)

DANIEL SERKI ORTSERGA

2014-04-01

Full Text Available This study set out to investigate land fragmentation in Ute Districts of Vandeikya Local Government Area of Benue State in Nigeria with a view to gaining insight into its nature, extent and effect on the socio-economy of the area. To achieve this objective, 129 farm plots together with their owners were randomly selected and studied. Dimensions of individual plots and distances between plots and owners’ residences were determined through field measurements. A questionnaire survey was also conducted to obtain information on number of plots held per farming household in the area. In addition, aerial photographs taken over the area in 1977 and topographical maps of the area as well as reports were studied to get baseline data on the extent of fragmentation in the past. Analysis of data showed that, average size of farm plot in 1977 was 0.171 hectare, and declined to 0.149 hectare in 2009. Mean number of plots per farmer in 2009 was 5.37 and mean number of plots cultivated in the same year was 3.68, while range of plot holdings was between 2.67 and 10.00. Using Januszewski’s index of fragmentation, a value of 0.173 was derived, indicating extreme pulverization of farm plots in the area. It was also found that farm plots were not only small, but also scattered over space. The study noted the diseconomies of land fragmentation arising from its severe limitation on mechanization and input investment in farm enterprise. It however recommends support for fragmentation in the area as a realistic response to ecological and demographic imperatives and as a way of stabilizing the socio-economy. It also recommends diversification from agriculture to other gainful activities in the area to augment proceeds from the small and inappropriately distributed farm plots.

The determination of the surface potential for the CdxHg1-xTe crystals and the V-CdxHg1-xTe and Ni-V-CdxMg1-xTe structures

International Nuclear Information System (INIS)

Veliyulin, Eh.I.; Ragimova, R.A.; Mamedov, A.A.

1996-01-01

Surface potential of semiconductor crystals n-Cd x Hg 1-x Te (unannealed and annealed in mercury vapors) and of the structures V-Cd x Hg 1-x Te, Ni-V-Cd x Hg 1-x Te has been defined using spectroscopy of weak-field electric reflection. It is shown that a deep penetration of vanadium atoms in near the surface region of the crystal occurs in the structures on the basis of unannealed Cd x Hg 1-x Te. 1 ref.; 4 figs

Radiative and interfacial recombination in CdTe heterostructures

Energy Technology Data Exchange (ETDEWEB)

Swartz, C. H., E-mail: craig.swartz@txstate.edu; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H. [Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States); Zaunbrecher, K. N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)

2014-12-01

Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

Effects of pulse-to-pulse residual species on discharges in repetitively pulsed discharges through packed bed reactors

Science.gov (United States)

Kruszelnicki, Juliusz; Engeling, Kenneth W.; Foster, John E.; Kushner, Mark J.

2016-09-01

Atmospheric pressure dielectric barrier discharges (DBDs) sustained in packed bed reactors (PBRs) are being investigated for conversion of toxic and waste gases, and CO2 removal. These discharges are repetitively pulsed having varying flow rates and internal geometries, which results in species from the prior pulse still being in the discharge zone at the time the following discharge pulse occurs. A non-negligible residual plasma density remains, which effectively acts as preionization. This residual charge changes the discharge properties of subsequent pulses, and may impact important PBR properties such as chemical selectivity. Similarly, the residual neutral reactive species produced during earlier pulses will impact the reaction rates on subsequent pulses. We report on results of a computational investigation of a 2D PBR using the plasma hydrodynamics simulator nonPDPSIM. Results will be discussed for air flowing though an array of dielectric rods at atmospheric pressure. The effects of inter-pulse residual species on PBR discharges will be quantified. Means of controlling the presence of residual species in the reactor through gas flow rate, pulse repetition, pulse width and geometry will be described. Comparisons will be made to experiments. Work supported by US DOE Office of Fusion Energy Science and the National Science Foundation.

The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

Energy Technology Data Exchange (ETDEWEB)

Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

2016-01-01

Graphical abstract: - Highlights: • The large-area CdTe film has been prepared by PVD under the pressure of 0.9 kPa. • The as-prepared CdTe thin film processes excellent photovoltaic properties. • This technique is suitable for depositing large-area CdTe thin film. • The 14.6% champion efficiency CdS/CdTe cell has been achieved. - Abstract: The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O{sub 2} pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm{sup 2}. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O{sub 2} flow. Through this method, the compact and uniform CdTe film (30 × 40 cm{sup 2}) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm{sup 2}) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (J{sub sc}) of the cell is 26.9 mA/cm{sup 2}, open circuit voltage (V{sub oc}) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

Energy Technology Data Exchange (ETDEWEB)

Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

2015-01-15

The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

Bromine doping of CdTe and CdMnTe epitaxial layers grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Waag, A. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Scholl, S. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Schierstedt, K. von (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Hommel, D. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

1993-03-01

We report on the n-type doping of CdTe and CdMnTe with bormine as a novel dopant material. /the thin films were grown by molecular beam epitaxy. ZnBr[sub 2] was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8x10[sup 18] cm[sup -3] could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr[sub 2] source temperatures up to 60 C - corresponding to a free carrier concentration of (2-3)x10[sup 18] cm[sup -3] - the free carrier concentration of the epitaxial film increases with ZnBr[sub 2] source temperature. For higher ZnBr[sub 2] source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr[sub 2] source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed. (orig.)

Review of CdTe medical applications

Energy Technology Data Exchange (ETDEWEB)

Entine, G; Garcia, D A; Tow, D E

1977-02-01

CdTe sensors are now being used in several areas of nuclear medicine. CdTe probe technics, originally developed to study dental pathology in dog models, are being used clinically to diagnose venous thrombosis of the legs and to detect occult dental infections in patients scheduled for prosthetic cardiovascular and orthopedic surgery. Similar instrumentation is in use in animal research of myocardial infarction and synthetic tooth substitutes. Transmission technics have also been developed to diagnose pulmonary edema and to measure bone mineral changes in space flight. Investigations are also underway in the use of linear or two-dimensional arrays of CdTe gamma sensors for medical imaging. Economic considerations have slowed this work, but the technology appears to be available. Development of photoconductive CdTe X-ray detectors for scintigraphic scanners has also begun. Rapid detector improvement will be needed for success in this field, but the potential usefulness is very great. Together, the present application results are encouraging and wide use of CdTe detectors should occur within only a few years.

Superparamagnetism in CuFeInTe{sub 3} and CuFeGaTe{sub 3} alloys

Energy Technology Data Exchange (ETDEWEB)

Grima-Gallardo, P.; Alvarado, F.; Munoz, M.; Duran, S.; Quintero, M.; Nieves, L.; Quintero, E.; Tovar, R.; Morocoima, M. [Centro de Estudios en Semiconductores (CES), Fac. Ciencias, Dpto. Fisica, Universidad de Los Andes, Merida (Venezuela); Ramos, M.A. [Laboratorio de Difraccion y Fluorescencia de Rayos-X, Instituto Zuliano de Investigaciones Tecnologicas (INZIT), La Canada de Urdaneta, Estado Zulia (Venezuela)

2012-06-15

The temperature dependencies of DC magnetic susceptibilities, {chi}(T), of CuFeInTe{sub 3} and CuFeGaTe{sub 3} alloys were measured in a SQUID apparatus using the protocol of field cooling (FC) and zero FC (ZFC). The FC curves of both samples reflect a weak ferromagnetic (or ferrimagnetic) behavior with a nearly constant value of {chi}(T) in the measured temperature range (2-300 K) indicating that the critical temperatures (T{sub c}) are >300 K. The ZFC curves diverges from FC, showing irreversibility temperatures (T{sub irr}) of {proportional_to}250 K for CuFeInTe{sub 3} and >300 K for CuFeGaTe{sub 3}, suggesting that we are dealing with cluster-glass systems in a superparamagnetic state. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

Science.gov (United States)

Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

2016-11-01

Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

NARCIS (Netherlands)

Cecchi, Stefano; Zallo, Eugenio; Momand, Jamo; Wang, Ruining; Kooi, Bart J.; Verheijen, Marcel A.; Calarco, Raffaella

Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers.

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

NARCIS (Netherlands)

Cecchi, S.; Zallo, E.; Momand, J.; Wang, R.; Kooi, B.J.; Verheijen, M.A.; Calarco, R.

Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here

Lattice thermal transport in group II-alloyed PbTe

Science.gov (United States)

Xia, Yi; Hodges, James M.; Kanatzidis, Mercouri G.; Chan, Maria K. Y.

2018-04-01

PbTe, one of the most promising thermoelectric materials, has recently demonstrated a thermoelectric figure of merit (ZT) of above 2.0 when alloyed with group II elements. The improvements are due mainly to significant reduction of lattice thermal conductivity (κl), which was in turn attributed to nanoparticle precipitates. However, a fundamental understanding of various phonon scattering mechanisms within the bulk alloy is still lacking. In this work, we apply the newly-developed density-functional-theory-based compressive sensing lattice dynamics approach to model lattice heat transport in PbTe, MTe, and Pb0.94M0.06Te (M = Mg, Ca, Sr, and Ba) and compare our results with experimental measurements, with focus on the strain effect and mass disorder scattering. We find that (1) CaTe, SrTe, and BaTe in the rock-salt structure exhibit much higher κl than PbTe, while MgTe in the same structure shows anomalously low κl; (2) lattice heat transport of PbTe is extremely sensitive to static strain induced by alloying atoms in solid solution form; (3) mass disorder scattering plays a major role in reducing κl for Mg/Ca/Sr-alloyed PbTe through strongly suppressing the lifetimes of intermediate- and high-frequency phonons, while for Ba-alloyed PbTe, precipitated nanoparticles are also important.

Scanning thermal microscopy of Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thermoelectric films

Energy Technology Data Exchange (ETDEWEB)

Zeipl, Radek; Remsa, Jan; Kocourek, Tomas [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Jelinek, Miroslav [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Vanis, Jan [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Institute of Photonics and Electronics ASCR v.v.i., Prague (Czech Republic); Navratil, Jiri [Institute of Macromolecular Chemistry ASCR v.v.i., Prague (Czech Republic)

2016-04-15

Thermal conductivity of thermoelectric Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thin nanolayers of different thicknesses prepared by pulsed laser deposition on Si (100) substrates was studied by a scanning thermal microscope working in AC current pulse mode. A sensitivity of the approach is demonstrated on the steep Si substrate-layer boundary made by a Ga+ focused ion beam technique. Transport and thermoelectric properties such as in-plane electrical resistivity and the Seebeck coefficient were studied in temperature range from room temperature up to 200 C. The room temperature thermal conductivity of the layers was estimated from thermoelectric figure of merit that was measured by the Harman technique, in which parameters related to electrical conductivity, Seebeck coefficient and thermal conductivity are measured at the same place and at the same time with electrical current flowing through the layer. For Yb{sub 0.19}Co{sub 4}Sb{sub 12} and Bi{sub 2}Te{sub 3} layers, we observed room temperature electrical resistivity of about 7 and 1 mΩcm, the Seebeck coefficient of -112 and -61μVK{sup -1}, thermoelectric figure of merit about 0.04 and 0.13 and we estimated thermal conductivity of about 1.3 and 0.9 WK{sup -1}m{sup -1}, respectively. (orig.)

Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

International Nuclear Information System (INIS)

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

2015-01-01

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 −5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 −5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions

Nano-crystalline Ag–PbTe thermoelectric thin films by a multi-target PLD system

Energy Technology Data Exchange (ETDEWEB)

Cappelli, E., E-mail: emilia.cappelli@ism.cnr.it [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Bellucci, A. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Dip. Fisica, Un. Roma Sapienza, Piazzale Aldo Moro 2, 00185 Rome (Italy); Medici, L. [CNR-IMAA, Tito Scalo, 85050 Potenza (Italy); Mezzi, A.; Kaciulis, S. [CNR-ISMN, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Fumagalli, F.; Di Fonzo, F. [Center Nano Science Technology @Polimi, I.I.T., Via Pascoli 70/3, 20133 Milano (Italy); Trucchi, D.M. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy)

2015-05-01

Highlights: • Thermoelectric PbTe thin films, with increasing Ag percentage, were deposited by PLD. • Almost stoichiometric PbTe (Ag doped) films were grown, as verified by XPS analysis. • GI-XRD established the formation of cubic PbTe, with nano-metric structure (∼35 nm). • Surface resistivity shows an increase in conductivity, with increasing Ag doping. • From Seebeck values and XPS depth analysis, 10% Ag seems to be the solubility limit. - Abstract: It has been evaluated the ability of ArF pulsed laser ablation to grow nano-crystalline thin films of high temperature PbTe thermoelectric material, and to obtain a uniform and controlled Ag blending, through the entire thickness of the film, using a multi-target system in vacuum. The substrate used was a mirror polished technical alumina slab. The increasing atomic percentage of Ag effect on physical–chemical and electronic properties was evaluated in the range 300–575 K. The stoichiometry and the distribution of the Ag component, over the whole thickness of the samples deposited, have been studied by XPS (X-ray photoelectron spectroscopy) and corresponding depth profiles. The crystallographic structure of the film was analyzed by grazing incidence X-ray diffraction (GI-XRD) system. Scherrer analysis for crystallite size shows the presence of nano-structures, of the order of 30–35 nm. Electrical resistivity of the samples, studied by the four point probe method, as a function of increasing Ag content, shows a typical semi-conductor behavior. From conductivity values, carrier concentration and Seebeck parameter determination, the power factor of deposited films was calculated. Both XPS, Hall mobility and Seebeck analysis seem to indicate a limit value to the Ag solubility of the order of 5%, for thin films of ∼200 nm thickness, deposited at 350 °C. These data resulted to be comparable to theoretical evaluation for thin films but order of magnitude lower than the corresponding bulk materials.

Superconductivity with twofold symmetry in Bi2Te3/FeTe0.55Se0.45 heterostructures

Science.gov (United States)

Du, Zengyi

2018-01-01

Topological superconductors are an interesting and frontier topic in condensed matter physics. In the superconducting state, an order parameter will be established with the basic or subsidiary symmetry of the crystalline lattice. In doped Bi2Se3 or Bi2Te3 with a basic threefold symmetry, it was predicted, however, that bulk superconductivity with order parameters of twofold symmetry may exist because of the presence of odd parity. We report the proximity effect–induced superconductivity in the Bi2Te3 thin film on top of the iron-based superconductor FeTe0.55Se0.45. By using the quasiparticle interference technique, we demonstrate clear evidence of twofold symmetry of the superconducting gap. The gap minimum is along one of the main crystalline axes following the so-called Δ4y notation. This is also accompanied by the elongated vortex shape mapped out by the density of states within the superconducting gap. Our results provide an easily accessible platform for investigating possible topological superconductivity in Bi2Te3/FeTe0.55Se0.45 heterostructures. PMID:29888330

ZnSe/ZnSeTe Superlattice Nanotips

Directory of Open Access Journals (Sweden)

Young SJ

2010-01-01

Full Text Available Abstract The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100 substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.

Sub-nanosecond laser-induced structural changes in the phase change material Ge2Sb2Te5 measured by an optical pump/x-ray probe technique: Structural snapshots with a 500 ps shutter

International Nuclear Information System (INIS)

Fons, P.; Brewe, D.; Stern, E.; Kolobov, A.V.; Fukaya, T.; Suzuki, M.; Uruga, T.; Kawamura, N.; Takagaki, M.; Ohsawa, H.; Tanida, H.; Tominaga, J.

2007-01-01

Phase-change alloys are characterized by reversible switching between amorphous and crystalline phases either by laser irradiation or by an electric programming current; the resulting changes in material properties can be used for non-volatile data storage. Switching typically occurs on nanosecond or less time scales. Considering the conflicting requirements for high-speed switching, yet long term data storage integrity, a deeper understanding of the switching processes in these materials is essential for insightful application development. Although, high-speed optical pump/probe observations have been made of reflectivity changes during the Ge 2 Sb 2 Te 5 switching process, due to the nanosecond order time scales involved little is known about the corresponding changes in structure. In addition as the amorphous phase does not diffract, its structural analysis is not amenable to analysis by high-speed diffraction techniques. We have used synchrotron-based time-resolved x-ray absorption fine structure spectroscopy (XAFS), a technique equally suitable for amorphous and crystalline phases to elaborate details in structural changes in the phase-change process. We report on two experiments using high-speed pulsed lasers that serve as optical pumps to induced material changes followed by synchrotron produced x-ray burst that serve as a time resolved structural probe. The first experiment carried out at the Advanced Photon source focuses on changes due to heating in the amorphous phase. Our experimental results indicate that the maximum temperature reached during the re-amorphization process are less than the melting point indicated in the bulk phase diagram of Ge 2 Sb 2 Te 5 reaching a maximum temperature of 620 C and in addition, do not share the same bond length distribution of a true melt. These findings strongly suggest the possibility of non-thermal melting. In the second experiment, we have obtained near-edge x-ray absorption data for a Ge 2 Sb 2 Te 5 film in the

Fast photoconductor CdTe detectors for synchrotron x-ray studies

International Nuclear Information System (INIS)

Yoo, Sung Shik; Faurie, J.P.; Huang Qiang; Rodricks, B.

1993-09-01

The Advanced Photon Source will be that brightest source of synchrotron x-rays when it becomes operational in 1996. During normal operation, the ring will be filled with 20 bunches of positrons with an interbunch spacing of 177 ns and a bunch width of 119 ps. To perform experiments with x-rays generated by positrons on these time scales one needs extremely high speed detectors. To achieve the necessary high speed, we are developing MBE-grown CdTe-base photoconductive position sensitive array detectors. The arrays fabricated have 64 pixels with a gap of 100 μm between pixels. The high speed response of the devices was tested using a short pulse laser. X-ray static measurements were performed using an x-ray tube and synchrotron radiation to study the device's response to flux and wavelength changes. This paper presents the response of the devices to some of these tests and discusses different physics aspects to be considered when designing high speed detectors

Templated growth of cadmium zinc telluride (CZT) nanowires using pulsed-potentials in hot non-aqueous solution

International Nuclear Information System (INIS)

Gandhi, T.; Raja, K.S.; Misra, M.

2006-01-01

A single step non-aqueous electrodeposition of cadmium zinc telluride (CZT) nanowires on nanoporous TiO 2 substrate was investigated under pulsed-potential conditions. Propylene carbonate was used as the non-aqueous medium. Cyclic voltammogram studies were carried out to understand the growth mechanism of CZT. EDAX and XRD measurements indicated formation of a compound semiconductor with a stoichiometry of Cd 1-x Zn x Te, where x varied between 0.04 and 0.2. Variation of the pulsed-cathodic potentials could modulate the composition of the CZT. More negative cathodic potentials resulted in increased Zn content. The nanowires showed an electronic band gap of about 1.6 eV. Mott-Schottky analyses indicated p-type semiconductor properties of both as-deposited and annealed CZT materials. Increase in Zn content increased the charge carrier density. Annealing of the deposits resulted in lower charge carrier densities, in the order of 10 15 cm -3

Rashba split surface states in BiTeBr

International Nuclear Information System (INIS)

Eremeev, S V; Rusinov, I P; Nechaev, I A; Chulkov, E V

2013-01-01

Within density functional theory, we study the bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases, which differ in atomic order in the Te–Br sublattice. On the basis of relativistic ab initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces of the ordered BiTeBr hold surface states with a giant spin–orbit splitting. The Te-terminated surface-state spin splitting has Rashba-type behavior with the coupling parameter α R ∼ 2 eVÅ. (paper)

Syntheses, crystal structures, and characterization of two new Tl{sup +}-Cu{sup 2+}-Te{sup 6+} oxides: Tl{sub 4}CuTeO{sub 6} and Tl{sub 6}CuTe{sub 2}O{sub 10}

Energy Technology Data Exchange (ETDEWEB)

Yeon, Jeongho; Kim, Sang-Hwan [Department of Chemistry, University of Houston, 136 Fleming Building, Houston, TX 77204-5003 (United States); Green, Mark A. [Department of Materials Science and Engineering, University of Maryland, College Park, MD, 20742-2115 and NIST Center for Neutron Research, National Institute of Standard and Technology, 100 Bureau Drive, Gaithersburg, MD 20899-6103 (United States); Bhatti, Kanwal Preet; Leighton, C. [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455-0132 (United States); Shiv Halasyamani, P., E-mail: psh@uh.edu [Department of Chemistry, University of Houston, 136 Fleming Building, Houston, TX 77204-5003 (United States)

2012-12-15