WorldWideScience

Sample records for tantalum nitrides

  1. Valence electronic structure of tantalum carbide and nitride

    Institute of Scientific and Technical Information of China (English)

    FAN; ChangZeng

    2007-01-01

    The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.……

  2. Valence electronic structure of tantalum carbide and nitride

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    @@ The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.

  3. Electron microprobe analysis of tantalum--nitride thin films

    International Nuclear Information System (INIS)

    Stoltz, D.L.; Starkey, J.P.

    1979-06-01

    Quantitative chemical analysis of 500- and 2000-angstrom tantalum--nitride films on glass substrates has been accomplished using an electron microprobe x-ray analyzer. In order to achieve this analysis, modifications to the microprobe were necessary. A description of the calibration procedure, the method of analysis, and the quantitative results are discussed

  4. Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

    KAUST Repository

    Yang, Xinbo; Aydin, Erkan; Xu, Hang; Kang, Jingxuan; Hedhili, Mohamed N.; Liu, Wenzhu; Wan, Yimao; Peng, Jun; Samundsett, Christian; Cuevas, Andres; De Wolf, Stefaan

    2018-01-01

    novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties

  5. Sputter deposition of tantalum-nitride films on copper using an rf-plasma

    International Nuclear Information System (INIS)

    Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

    1994-01-01

    A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

  6. A study of nitride formation during the oxidation of titanium-tantalum alloys

    International Nuclear Information System (INIS)

    Hanrahan, R.J. Jr.; Lu, Y.C.; Kung, H.; Butt, D.P.

    1996-01-01

    The oxidation rates of Ti rich titanium-tantalum alloys are significantly lower in air than in oxygen. This nitrogen effect has been shown to be associated with the formation of a nitride layer at or near the scale-metal interface. In the present work the authors used transmission electron microscopy and microdiffraction to identify the nitrides formed on Ti5Ta and Ti40Ta (5 and 40 weight percent Ta alloys) during identical exposures. In both alloys the nitride develops in contact with the oxygen stabilized α-phase in the substrate. In Ti5Ta a continuous layer of TiN forms, while in Ti40Ta a discontinuous layer of Ti 2 N interspersed with Ta 2 O 5 (formed from the Ta rich β-phase) is formed. The nitride layer acts as an oxygen diffusion barrier, reducing the dissolution of oxygen in the substrate

  7. Study the effect of nitrogen flow rate on tribological properties of tantalum nitride based coatings

    Science.gov (United States)

    Chauhan, Dharmesh B.; Chauhan, Kamlesh V.; Sonera, Akshay L.; Makwana, Nishant S.; Dave, Divyeshkumar P.; Rawal, Sushant K.

    2018-05-01

    Tantalum Nitride (TaN) based coatings are well-known for their high temperature stability and chemical inertness. We have studied the effect of nitrogen flow rate variation on the structural and tribological properties of TaN based coating deposited by RF magnetron sputtering process. The nitrogen flow rate was varied from 5 to 30 sccm. X-ray diffractometer (XRD) and Atomic Force Microscopy (AFM) were used to determine structure and surface topography of coating. Pin on disc tribometer was used to determine tribological properties of coating. TaN coated brass and mild steel substrates shows higher wear resistance compared to uncoated substrates of brass and mild steel.

  8. Tantalum nitride for photocatalytic water splitting: concept and applications

    KAUST Repository

    Nurlaela, Ela; Ziani, Ahmed; Takanabe, Kazuhiro

    2016-01-01

    Along with many other solar energy conversion processes, research on photocatalytic water splitting to generate hydrogen and oxygen has experienced rapid major development over the past years. Developing an efficient visible-light-responsive photocatalyst has been one of the targets of such research efforts. In this regard, nitride materials, particularly Ta3N5, have been the subject of investigation due to their promising properties. This review focuses on the fundamental parameters involved in the photocatalytic processes targeting overall water splitting using Ta3N5 as a model photocatalyst. The discussion primarily focuses on relevant parameters that are involved in photon absorption, exciton separation, carrier diffusion, carrier transport, catalytic efficiency, and mass transfer of the reactants. An overview of collaborative experimental and theoretical approaches to achieve efficient photocatalytic water splitting using Ta3N5 is discussed.

  9. Tantalum nitride for photocatalytic water splitting: concept and applications

    KAUST Repository

    Nurlaela, Ela

    2016-10-12

    Along with many other solar energy conversion processes, research on photocatalytic water splitting to generate hydrogen and oxygen has experienced rapid major development over the past years. Developing an efficient visible-light-responsive photocatalyst has been one of the targets of such research efforts. In this regard, nitride materials, particularly Ta3N5, have been the subject of investigation due to their promising properties. This review focuses on the fundamental parameters involved in the photocatalytic processes targeting overall water splitting using Ta3N5 as a model photocatalyst. The discussion primarily focuses on relevant parameters that are involved in photon absorption, exciton separation, carrier diffusion, carrier transport, catalytic efficiency, and mass transfer of the reactants. An overview of collaborative experimental and theoretical approaches to achieve efficient photocatalytic water splitting using Ta3N5 is discussed.

  10. Synthesis of tantalum carbide and nitride nanoparticles using a reactive mesoporous template for electrochemical hydrogen evolution

    KAUST Repository

    Alhajri, Nawal Saad; Yoshida, Hiroshi; Anjum, Dalaver H.; Garcia Esparza, Angel T.; Kubota, Jun; Domen, Kazunari; Takanabe, Kazuhiro

    2013-01-01

    Tantalum carbide and nitride nanocrystals were prepared through the reaction of a tantalum precursor with mesoporous graphitic (mpg)-C 3N4. The effects of the reaction temperature, the ratio of the Ta precursor to the reactive template (mpg-C3N4), and the selection of the carrier gas (Ar, N2 and NH3) on the resultant crystal phases and structures were investigated. The produced samples were characterized using powder X-ray diffraction (XRD), CHN elemental analyses, thermogravimetric analyses (TGA), nitrogen sorption, a temperature-programmed reaction with mass spectroscopy (MS), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The results indicate that the different tantalum phases with cubic structure, TaN, Ta2CN, and TaC, can be formed under a flow of nitrogen when formed at different temperatures. The Ta3N5 phase with a Ta5+ oxidation state was solely obtained at 1023 K under a flow of ammonia, which gasified the C 3N4 template and was confirmed by detecting the decomposed gaseous products via MS. Significantly, the formation of TaC, Ta2CN, and TaN can be controlled by altering the weight ratio of the C 3N4 template relative to the Ta precursor at 1573 K under a flow of nitrogen. The high C3N4/Ta precursor ratio generally resulted in high carbide content rather than a nitride one, consistent with the role of mpg-C3N4 as a carbon source. Electrochemical measurements revealed that the synthesized nanomaterials were consistently able to produce hydrogen under acidic conditions (pH 1). The obtained Tafel slope indicates that the rate-determining step is the Volmer discharge step, which is consistent with adsorbed hydrogen being weakly bound to the surface during electrocatalysis. © 2013 The Royal Society of Chemistry.

  11. Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

    KAUST Repository

    Yang, Xinbo

    2018-04-19

    Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaNx interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaNx contact, which significantly improves the fill factor and the open circuit voltage (Voc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.

  12. Effects of processing parameters on the properties of tantalum nitride thin films deposited by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nazon, J.; Sarradin, J.; Flaud, V.; Tedenac, J.C. [Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, Place E. Bataillon, 34095 Montpellier Cedex 5 (France); Frety, N. [Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, Place E. Bataillon, 34095 Montpellier Cedex 5 (France)], E-mail: Nicole.Frety@univ-montp2.fr

    2008-09-22

    The effects of processing parameters on the properties of tantalum nitride thin films deposited by radio frequency reactive sputtering have been investigated. The influence of the N{sub 2} partial and (Ar + N{sub 2}) total gas pressures as well as the sputtering power on the microstructure and electrical properties is reported. Rising the N{sub 2} partial pressure, from 2 to 10.7%, induces a change in the composition of the {delta}-TaN phase, from TaN to TaN{sub 1.13}. This composition change is associated with a drastic increase of the electrical resistivity over a 7.3% N{sub 2} partial pressure. The total gas pressure is revealed to strongly affect the film microstructure since a variation in both composition and grain size is observed when the gas pressure rises from 6.8 to 24.6 Pa. When the sputtering power varied between 50 and 110 W, an increase of the grain size related to a decrease of the electrical resistivity is observed.

  13. Cobalt phosphate-modified barium-doped tantalum nitride nanorod photoanode with 1.5% solar energy conversion efficiency

    KAUST Repository

    Li, Yanbo

    2013-10-03

    Spurred by the decreased availability of fossil fuels and global warming, the idea of converting solar energy into clean fuels has been widely recognized. Hydrogen produced by photoelectrochemical water splitting using sunlight could provide a carbon dioxide lean fuel as an alternative to fossil fuels. A major challenge in photoelectrochemical water splitting is to develop an efficient photoanode that can stably oxidize water into oxygen. Here we report an efficient and stable photoanode that couples an active barium-doped tantalum nitride nanostructure with a stable cobalt phosphate co-catalyst. The effect of barium doping on the photoelectrochemical activity of the photoanode is investigated. The photoanode yields a maximum solar energy conversion efficiency of 1.5%, which is more than three times higher than that of state-of-the-art single-photon photoanodes. Further, stoichiometric oxygen and hydrogen are stably produced on the photoanode and the counter electrode with Faraday efficiency of almost unity for 100 min. © 2013 Macmillan Publishers Limited. All rights reserved.

  14. Tuning the properties of visible-light-responsive tantalum (oxy)nitride photocatalysts by non-stoichiometric compositions: A first-principles viewpoint

    KAUST Repository

    Harb, Moussab

    2014-01-01

    Finding an ideal photocatalyst for achieving efficient overall water splitting still remains a great challenge. By applying accurate first-principles quantum calculations based on DFT with the screened non-local hybrid HSE06 functional, we bring rational insights at the atomic level into the influence of non-stoichiometric compositions on essential properties of tantalum (oxy)nitride compounds as visible-light-responsive photocatalysts for water splitting. Indeed, recent experiments show that such non-stoichiometry is inherent to the nitridation methods of tantalum oxide with unavoidable oxygen impurities. We considered here O-enriched Ta3N5 and N-enriched TaON materials. Although their structural parameters are found to be very similar to those of pure compounds and in good agreement with available experimental studies, their photocatalytic features for visible-light-driven overall water splitting reactions show different behaviors. Further partial nitration of TaON leads to a narrowed band gap, but partially oxidizing Ta3N5 causes only subtle changes in the gap. The main influence, however, is on the band edge positions relative to water redox potentials. The pure Ta3N5 is predicted to be a good candidate only for H+ reduction and H2 evolution, while the pure TaON is predicted to be a good candidate for water oxidation and O2 evolution. Non-stoichiometry has here a positive influence, since partially oxidized tantalum nitride, Ta(3-x)N(5-5x)O5x (for x ≥ 0.16) i.e. with a composition in between TaON and Ta3N5, reveals suitable band edge positions that correctly bracket the water redox potentials for visible-light-driven overall water splitting reactions. Among the various explored Ta(3-x)N(5-5x)O5x structures, a strong stabilization is obtained for the configuration displaying a strong interaction between the O-impurities and the created Ta-vacancies. In the lowest-energy structure, each created Ta-vacancy is surrounded by five O-impurity species substituting

  15. Construction of fiber-shaped silver oxide/tantalum nitride p-n heterojunctions as highly efficient visible-light-driven photocatalysts.

    Science.gov (United States)

    Li, Shijie; Hu, Shiwei; Xu, Kaibing; Jiang, Wei; Liu, Yu; Leng, Zhe; Liu, Jianshe

    2017-10-15

    Constructing novel and efficient p-n heterojunction photocatalysts has stimulated great interest. Herein, we report the design and synthesis of fiber-shaped Ag 2 O/Ta 3 N 5 p-n heterojunctions as a kind of efficient photocatalysts. Ta 3 N 5 nanofibers were prepared by an electrospinning-calcination-nitridation method, and then the in-situ anchoring of Ag 2 O on their surfaces was realized by a facile deposition method. The resulting Ag 2 O/Ta 3 N 5 heterojunctions were comprised of porous Ta 3 N 5 nanofibers (diameter: ∼150nm) and Ag 2 O nanoparticles (size: ∼12nm). The photocatalytic activity of these heterojunctions were studied by decomposing rhodamine B (RhB) dye and tetracycline (TC) antibiotic under visible light (λ>400nm). In all the samples, the heterojunction with Ag 2 O/Ta 3 N 5 molar ratio of 0.2/1 displays the best activity. It is found that a synergistic effect contributes to the effective suppression of charges recombination between Ta 3 N 5 and Ag 2 O, leading to an enhanced photocatalytic activity with good stability. The photogenerated holes (h + ) and superoxide radicals (O 2 - ) play dominant roles in the photocatalytic process. These p-n heterojunctions will have great potential for environmental remediation because of the facile preparation process and exceptional photocatalytic activity. Copyright © 2017 Elsevier Inc. All rights reserved.

  16. Tantalum-based semiconductors for solar water splitting.

    Science.gov (United States)

    Zhang, Peng; Zhang, Jijie; Gong, Jinlong

    2014-07-07

    Solar energy utilization is one of the most promising solutions for the energy crises. Among all the possible means to make use of solar energy, solar water splitting is remarkable since it can accomplish the conversion of solar energy into chemical energy. The produced hydrogen is clean and sustainable which could be used in various areas. For the past decades, numerous efforts have been put into this research area with many important achievements. Improving the overall efficiency and stability of semiconductor photocatalysts are the research focuses for the solar water splitting. Tantalum-based semiconductors, including tantalum oxide, tantalate and tantalum (oxy)nitride, are among the most important photocatalysts. Tantalum oxide has the band gap energy that is suitable for the overall solar water splitting. The more negative conduction band minimum of tantalum oxide provides photogenerated electrons with higher potential for the hydrogen generation reaction. Tantalates, with tunable compositions, show high activities owning to their layered perovskite structure. (Oxy)nitrides, especially TaON and Ta3N5, have small band gaps to respond to visible-light, whereas they can still realize overall solar water splitting with the proper positions of conduction band minimum and valence band maximum. This review describes recent progress regarding the improvement of photocatalytic activities of tantalum-based semiconductors. Basic concepts and principles of solar water splitting will be discussed in the introduction section, followed by the three main categories regarding to the different types of tantalum-based semiconductors. In each category, synthetic methodologies, influencing factors on the photocatalytic activities, strategies to enhance the efficiencies of photocatalysts and morphology control of tantalum-based materials will be discussed in detail. Future directions to further explore the research area of tantalum-based semiconductors for solar water splitting

  17. Vapor deposition of tantalum and tantalum compounds

    International Nuclear Information System (INIS)

    Trkula, M.

    1996-01-01

    Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition

  18. Studies of tantalum nitride thin film resistors

    International Nuclear Information System (INIS)

    Langley, R.A.

    1975-01-01

    Backscattering of 2-MeV He ions was used to correlate the electrical properties of sputtered TaN/sub x/ thin-film resistors with their N content. The properties measured were sheet resistance, differential Seebeck potential (DSP), thermal coefficient of resistance (TCR), and stability. Resistivity and DSP are linearly dependent on N content for N/Ta ratios of 0.25 to 0.55. TCR decreases sharply below N/Ta = 0.35 and is relatively constant from 0.35 to 0.55. Stability is independent of N content. (DLC)

  19. Conducting metal oxide and metal nitride nanoparticles

    Science.gov (United States)

    DiSalvo, Jr., Francis J.; Subban, Chinmayee V.

    2017-12-26

    Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst support in a fuel cell.

  20. Niobium and tantalum

    Science.gov (United States)

    Schulz, Klaus J.; Piatak, Nadine M.; Papp, John F.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    Niobium and tantalum are transition metals that are almost always found together in nature because they have very similar physical and chemical properties. Their properties of hardness, conductivity, and resistance to corrosion largely determine their primary uses today. The leading use of niobium (about 75 percent) is in the production of high-strength steel alloys used in pipelines, transportation infrastructure, and structural applications. Electronic capacitors are the leading use of tantalum for high-end applications, including cell phones, computer hard drives, and such implantable medical devices as pacemakers. Niobium and tantalum are considered critical and strategic metals based on the potential risks to their supply (because current production is restricted to only a few countries) and the significant effects that a restriction in supply would have on the defense, energy, high-tech industrial, and medical sectors.The average abundance of niobium and tantalum in bulk continental crust is relatively low—8.0 parts per million (ppm) niobium and 0.7 ppm tantalum. Their chemical characteristics, such as small ionic size and high electronic field strength, significantly reduce the potential for these elements to substitute for more common elements in rock-forming minerals and make niobium and tantalum essentially immobile in most aqueous solutions. Niobium and tantalum do not occur naturally as pure metals but are concentrated in a variety of relatively rare oxide and hydroxide minerals, as well as in a few rare silicate minerals. Niobium is primarily derived from the complex oxide minerals of the pyrochlore group ((Na,Ca,Ce)2(Nb,Ti,Ta)2(O,OH,F)7), which are found in some alkaline granite-syenite complexes (that is, igneous rocks containing sodium- or potassium-rich minerals and little or no quartz) and carbonatites (that is, igneous rocks that are more than 50 percent composed of primary carbonate minerals, by volume). Tantalum is derived mostly from the

  1. Tantalum markers in radiography

    International Nuclear Information System (INIS)

    Aronson, A.S.; Jonsson, N.; Alberius, P.

    1985-01-01

    The biocompatibility of two types of radiopaque tantalum markers was evaluated histologically. Reactions to pin markers (99.9% purity) and spherical markers (95.2% purity) were investigated after 3-6 weeks in rabbits and 5-48 weeks in children with abnormal growth. Both marker types were firmly attached to bone trabeculae; this was most pronounced in rabbit bone, and no adverse macroscopic reactions were observed. Microscopically, no reactions or only slight fibrosis of bone tissue were detected, while soft tissues only demonstrated a minor inflammatory reaction. Nevertheless, the need for careful preparation and execution of marker implantations is stressed, and particularly avoidance iof the use of emery in sharpening of cannulae. The bioinertness of tantalum was reconfirmed as was its suitability for use as skeletal and soft tissue radiographic markers. (orig.)

  2. Niobium and tantalum

    International Nuclear Information System (INIS)

    Polupanova, L.I.; Volkova, G.A.

    1983-01-01

    General mineralogical-geochemical and analytical characteristics of niobium and tantalum are presented. Potentialities of any analytical methods for determining these elements in various geologic samples are estimated. The following specific techniques are described: neutron + activation determination of Ta, fluorescence X-radiometric determination of Nb and Ta, fluorescence X-ray spectral determination of Nb and Ta, spectrographic determination of Nb and Ta, gravimetric determination of Nb and Ta, their extraction-photometric determination with various reagents (crystal violet, rhodamine 6 Y, butylrhodamine B)

  3. Hydride Olefin complexes of tantalum and niobium

    NARCIS (Netherlands)

    Klazinga, Aan Hendrik

    1979-01-01

    This thesis describes investigations on low-valent tantalum and niobium hydride and alkyl complexes, particularly the dicyclopentadienyl tantalum hydride olefin complexes Cp2Ta(H)L (L=olefin). ... Zie: Summary

  4. Additively manufactured porous tantalum implants

    NARCIS (Netherlands)

    Wauthle, Ruben; Van Der Stok, Johan; Yavari, Saber Amin; Van Humbeeck, Jan; Kruth, Jean Pierre; Zadpoor, Amir Abbas; Weinans, Harrie; Mulier, Michiel; Schrooten, Jan

    2015-01-01

    The medical device industry's interest in open porous, metallic biomaterials has increased in response to additive manufacturing techniques enabling the production of complex shapes that cannot be produced with conventional techniques. Tantalum is an important metal for medical devices because of

  5. Surface scattering mechanisms of tantalum nitride thin film resistor.

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2014-01-01

    In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current-voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.

  6. Electrorecovery of tantalum in molten fluorides

    International Nuclear Information System (INIS)

    Espinola, A.; Dutra, A.J.B.; Silva, F.T. da

    1988-01-01

    Considering the privileged situation of Brazil as a productor of tantaliferous minerals, the authors have in view the development of a technology for production of metallic tantalum via molten salts electrolysis; this has the advantage of improving the aggregate value of exportation products, additionally to tantalum oxide and tantalum concentrates. Having in view the preliminary determintion of better conditions of temperature, electrolyte composition and current density for this process, electrolysis were conducted with a solvent composed of an eutetic mixture of lithium, sodium and potassium fluoride for dipotassium fluotantalate and occasionally for tantalum oxide. Current efficiencies as high as 83% were obtained in favoured conditions. (author) [pt

  7. Producing tantalum or columbium powder

    International Nuclear Information System (INIS)

    Rerat, C.F.

    1979-01-01

    A process is described for the production of tantalum or columbium powder with a high yield within a desired range of particle sizes. A molten salt bath of a double salt comprising either an alkali metal tantalum fluoride or an alkali metal columbium fluoride and a relatively large amount of alkali metal halide diluent salt to act as a heat sink is initially maintained at a temperature a little above the liquidus temperature of the salt mixture. A liquid alkali metal at a comparatively low temperature is added to the continuously stirred bath at a high mass flow rate, and reduces the double salt, producing tantalum or columbium. The reaction is exothermic and causes the temperature to rise rapidly to a desired final reaction temperature within the range 760 to 1000 0 . The liquid alkali metal is thereafter fed at a high mass flow rate to complete the reaction quickly at the final reaction temperature. Forced cooling at a heat extraction rate not less than 42 kilojoules/min./kg. of double salt is used during at least a portion of the reaction cycle at a rate sufficient to maintain the final reaction temperature within a desired range. (author)

  8. Hot pressing of nanocrystalline tantalum using high frequency induction heating and pulse plasma sintering

    Science.gov (United States)

    Jakubowicz, J.; Adamek, G.; Sopata, M.; Koper, J. K.; Siwak, P.

    2017-12-01

    The paper presents the results of nanocrystalline powder tantalum consolidation using hot pressing. The authors used two different heating techniques during hot pressing: high-frequency induction heating (HFIH) and pulse plasma sintering (PPS). A comparison of the structure, microstructure, mechanical properties and corrosion resistance of the bulk nanocrystalline tantalum obtained in both techniques was performed. The nanocrystalline powder was made to start from the microcrystalline one using the high-energy ball milling process. The nanocrystalline powder was hot-pressed at 1000 °C, whereas, for comparison, the microcrystalline powder was hot pressed up to 1500 °C for proper consolidation. The authors found that during hot pressing, the powder partially reacts with the graphite die covered by boron nitride, which facilitated punches and powder displacement in the die during densification. Tantalum carbide and boride in the nanocrystalline material was found, which can improve the mechanical properties. The hardness of the HFIH and PPS nanocrystalline tantalum was as high as 625 and 615 HV, respectively. The microstructure was more uniform in the PPS nanomaterial. The corrosion resistance in both cases deteriorated, in comparison to the microcrystalline material, while the PPS material corrosion resistance was slightly better than that of the HFIH one.

  9. Preparation of potassium tantalum fluoride from tantalum hydroxide

    International Nuclear Information System (INIS)

    Silva, F.T. da; Espinola, A.; Dutra, A.J.B.

    1987-01-01

    Potassium tantalum fluoride (K 2 TaF 7 ) is an intermediary product in the processing of tantaliferous materials; it is the basic raw material for both reduction processes in use presently: reduction by metallic sodium and electrolysis in molten halides. It is normally obtained from a fluorotantalic acid solution to which potassium ions are added the precipitation of white acicular crystals of K 2 TaF 7 . The conditions for precipitation and recrystallization were studied, and crystal characterization were done by scanning electron microscopy, X-ray diffraction and thermogravimetric and thermodifferential analyses. (Author) [pt

  10. Metal Immiscibility Route to Synthesis of Ultrathin Carbides, Borides, and Nitrides.

    Science.gov (United States)

    Wang, Zixing; Kochat, Vidya; Pandey, Prafull; Kashyap, Sanjay; Chattopadhyay, Soham; Samanta, Atanu; Sarkar, Suman; Manimunda, Praveena; Zhang, Xiang; Asif, Syed; Singh, Abhisek K; Chattopadhyay, Kamanio; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

    2017-08-01

    Ultrathin ceramic coatings are of high interest as protective coatings from aviation to biomedical applications. Here, a generic approach of making scalable ultrathin transition metal-carbide/boride/nitride using immiscibility of two metals is demonstrated. Ultrathin tantalum carbide, nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper bilayer with corresponding precursor (C 2 H 2 , B powder, and NH 3 ). The ultrathin crystals are found on the copper surface (opposite of the metal-metal junction). A detailed microscopy analysis followed by density functional theory based calculation demonstrates the migration mechanism, where Ta atoms prefer to stay in clusters in the Cu matrix. These ultrathin materials have good interface attachment with Cu, improving the scratch resistance and oxidation resistance of Cu. This metal-metal immiscibility system can be extended to other metals to synthesize metal carbide, boride, and nitride coatings. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Niobium Nb and tantalum Ta

    International Nuclear Information System (INIS)

    Busev, A.I.; Tiptsova, V.G.; Ivanov, V.M.

    1978-01-01

    The basic methods for determining niobium and tantalum in various objects are described. Nb and Ta are separated with the aid of N-benzoyl-N-phenylhydroxylamine by precipitating Nb(5) from a tartaric acid solution with subsequent precipitation of Ta from the filtrate. The gravimetric determination of Nb and Ta in steels is based on their quantitative separation from a diluted solution by way of hydrolysis with subsequent after-precipitation with phenylarsonic acid (in the absence of W). The gravimetric determination of Nb in the presence of W is carried out with the aid of Cupferron. To determine Nb in its carbide, Nb(5) reduced to Nb(3) is titrated with a solution of K 2 Cr 2 O 7 in the presence of phenyl-anthranilic acid. The photometric determination of Nb in tungsten-containing steels and in ores containing Ti, W, Mo and Cr is based on the rhodanide method. Nb is determined in alloys with Zr and Ti photometrically with the aid of 4-(2-pyridylazo)-resorcin and in alloyed steels with the aid of benzhydroxamic acid. The latter complex is extracted with chloroform. This method is used to determine Nb in rocks. The photometric determination of Ta in TiCl 4 is carried out with the aid of pyrogallol, in commercial niobium with the aid of methyl violet, and in steel with the aid of 4-(-pyridylazo)-resorcin. Also described is the polarographic determination of Nb in tantalum pentoxide

  12. Preparation of potassium-reduced tantalum powders

    International Nuclear Information System (INIS)

    Kolosov, V.N.; Miroshnichenko, M.N.; Orlov, V.M.; Prokhorova, T.Yu.

    2005-01-01

    Characteristics of tantalum powders prepared by reduction of molten potassium heptafluorotantalate with liquid potassium are studied in a temperature range of 750 - 850 deg C using potassium chloride as a flux at a ratio of K 2 TaF 7 : KCl = 1, 2, and 3. The use of potassium as a reducing agent facilitates washing of tantalum powders for impurity salt removal, reduces sodium content and leakage currents in the anodes. As compared to sodium process, the potassium reduction results in a high yield of sponge material, a decrease in the specific surface area and yield of tantalum powder suitable for manufacture of capacitor anodes [ru

  13. From single-site tantalum complexes to nanoparticles of TaxNy and TaOxNy supported on silica: elucidation of synthesis chemistry by dynamic nuclear polarization surface enhanced NMR spectroscopy and X-ray absorption spectroscopy

    KAUST Repository

    Mohandas, Janet Chakkamadathil; Abou-Hamad, Edy; Callens, Emmanuel; Samantaray, Manoja; Gajan, David; Gurinov, Andrei; Ma, Tao; Ould-Chikh, Samy; Hoffman, Adam S.; Gates, Bruce C.; Basset, Jean-Marie

    2017-01-01

    Air-stable catalysts consisting of tantalum nitride nanoparticles represented as a mixture of TaxNy and TaOxNy with diameters in the range of 0.5 to 3 nm supported on highly dehydroxylated silica were synthesized from TaMe5 (Me = methyl) and dimeric

  14. Preparation of tantalum targets of known thicknesses

    International Nuclear Information System (INIS)

    Alexander, J.R.; Wirth, H.L.

    1985-01-01

    A series of carbon-backed tantalum targets were produced in a heavy ion sputtering system with a Penning ion source. The target thicknesses were then measured using the alpha-ray energy loss method. The resulting tabulated measurements were reproducible and make possible the production of carbon-backed tantalum targets with pre-determined thicknesses ranging from 20 μg/cm 2 to 1 mg/cm 2 . (orig.)

  15. Plasma nitriding of steels

    CERN Document Server

    Aghajani, Hossein

    2017-01-01

    This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

  16. Extraction of Tantalum from locally sourced Tantalite using ...

    African Journals Online (AJOL)

    acer

    Extraction of Tantalum from locally sourced Tantalite using ... ABSTRACT: The ability of polyethylene glycol solution to extract tantalum from locally .... metal ion in question by the particular extractant. ... Loparite, a rare-earth ore (Ce, Na,.

  17. Structures and photocatalytic behavior of tantalum-oxynitride thin films

    International Nuclear Information System (INIS)

    Hsieh, J.H.; Li, Chuan; Liang, H.C.

    2011-01-01

    Tantalum oxynitride films were created by direct nitridation/oxidation during rapid thermal annealing at temperatures 450-700 deg. C. Instead of during deposition, this post process may be proved to be an alternative way to make transition metallic oxynitride films. With sufficient supply of oxygen flow (≥ 30 sccm), TaO x N y was formed as examined from X-ray diffraction (XRD) analysis. This oxynitride film has a broad optical absorption over the range of visible light and sufficient photocatalytic function. For optical absorption, the films' transmittance and reflectance were measured by a UV-VIS-NIR spectrophotometer with wavelengths ranging from 300 to 900 nm. The broad visible light absorption is associated with the formation of band gap in TaO x N y film, which was examined by the theoretical calculations combining the Beer-Lambert law and Tauc formula. Lastly, the photocatalysis of TaO x N y was gauged by the photodegradation test which measured the reduction of light absorbance affected by the decomposition of methylene blue (C 16 H 18 N 3 SCl.3H 2 O) on TaO x N y under visible light irradiation.

  18. Modeling the mechanical behavior of tantalum

    International Nuclear Information System (INIS)

    Lee, B.J.; Ahzi, S.

    1997-01-01

    A crystal plasticity model is proposed to simulate the large plastic deformation and texture evolution in tantalum over a wide range of strain rates. In the model, a modification of the viscoplastic power law for slip and a Taylor interaction law for polycrystals are employed, which account for the effects of strain hardening, strain-rate hardening, and thermal softening. A series of uniaxial compression tests in tantalum at strain rates ranging from 10 -3 to 10 4 s -1 were conducted and used to verify the model's simulated stress-strain response. Initial and evolved deformation textures were also measured for comparison with predicted textures from the model. Applications of this crystal plasticity model are made to examine the effect of different initial crystallographic textures in tantalum subjected to uniaxial compression deformation or biaxial tensile deformation

  19. Tantalum high-temperature oxidation kinetics

    International Nuclear Information System (INIS)

    Grigor'ev, Yu.M.; Sarkisyan, A.A.; Merzhanov, A.G.

    1981-01-01

    Kinetics of heat release and scale growth during tantalum oxidation within 650-1300 deg C temperature range in oxygen-containing media is investigated. Kinetic equations and temperature and pressure dependences of constants are ound Applicability of the kinetic Lorie mechanism for the description of the tantalum oxidation kinetics applicably to rapid-passing processes is shown. It is stated that the process rate (reaction ability) is determined by adsorption desorption factors on the external surface of the ''protective'' oxide for the ''linear'' oxidation stage [ru

  20. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2016-12-01

    In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms.

  1. New Sesame equation of state for tantalum

    International Nuclear Information System (INIS)

    Greeff, C. W.; Johnson, J. D.

    2000-01-01

    A new Sesame equation of state (EOS) table has been created for tantalum. This EOS incorporates new high pressure Hugoniot data and diamond anvil cell compression data. The new EOS gives better agreement with this data as well as with sound speeds and Hugoniot curves of porous samples

  2. Bone remodeling around cementless tantalum cups

    NARCIS (Netherlands)

    Grillo, J. -C.; Flecher, X.; Bouvenot, J.; Argenson, J. -N.

    2008-01-01

    Purpose of the study.-Most studies have reported a significant decrease in periacetabular bone stock one year after implantation of a cementless cup. The purpose of this work was to study the bone-implant interface of the tantalum cup using plain X-rays and dual-energy X-ray absorptiometry (DEXA).

  3. Review of tantalum and niobium alloy production

    International Nuclear Information System (INIS)

    Buckman, R.W. Jr.

    1984-01-01

    This paper concentrates on the current state of niobium- and tantalum-base alloy production. The materials requirements, alloy compositions of interest, and production status are discussed. Finally, a list of developments needed to support the SP-100 program will be identified. A bibliography is included

  4. Obtainment of tantalum oxide from national ores

    International Nuclear Information System (INIS)

    Pinatti, D.G.; Ribeiro, S.; Martins, A.H.

    1988-01-01

    The experimental results of tantalum oxides (Ta 2 O 5 ) obtainment from Brazilian ores of tantalite and columbite are described. This study is a part of the technologic and scientific research design of refractory metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W) and correlate ceramics. (C.G.C.) [pt

  5. Intercalated compounds of niobium and tantalum dicalcogenides

    International Nuclear Information System (INIS)

    Wypych, F.

    1988-01-01

    The synthesis of niobium and tantalum lamellar compounds and its intercalated derivatives is described. The intercalated compounds with lithium, with alkaline metal and with metals of the first-row transition are studied, characterized by X-ray diffraction. (C.G.C.) [pt

  6. Preparation of uranium nitride

    International Nuclear Information System (INIS)

    Potter, R.A.; Tennery, V.J.

    1976-01-01

    A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

  7. Structural changes and tribological behaviors of nitrogen ion-implanted tantalum

    International Nuclear Information System (INIS)

    Wang, W.J.; Wang, T.M.; Wang, X.J.

    1996-01-01

    Single-crystal tantalum sheets were implanted by 110 keV nitrogen ions to a dose of 5 x 10 17 ions/cm 2 at a temperature less than 100 C. The structural changes and the concentration depth profiles of the implanted layers were characterized by glancing-angle X-ray diffraction (GXRD), selected area diffraction (SAD) and Auger electron spectroscopy (AES), respectively. The microhardness, the friction coefficient and the wear rate of the specimens against hardened GCr15 steel balls were also determined before and after the implantation. Scanning electron microscopy (SEM) and electron probe micro-analyzer (EPMA) were used to analyze the wear tracks. The results showed that there exist deviations between the characterization results of AES and GXRD or SAD. The AES measurement suggests the formation of the tantalum nitrides with a maximum N/Ta ratio of 1/2, while the GXRD and SAD reveal the formation of bcc Ta(N), fcc TaN and a trace amount of hcp Ta 2 N. This can be explained by considering the inhomogeneous distribution of nitrogen atoms in micro-regions: the enrichment of nitrogen atoms in local micro-regions leads to the formation of fcc TaN; however, the unfavorable structural compatibility between bcc Ta and hcp Ta 2 N hinders the formation of hcp Ta 2 N in the regions where the N/Ta ratio reaches 1/2. The detected trace amount of the hcp Ta 2 N phase in the implanted layers can be considered as an after effect of nitrogen loss from the originally formed nitrides. The results also showed that the tribological properties of the Ta surfaces were improved due to the implantation. It is believed that the implantation-induced Ta(N), fcc TaN, and hcp Ta 2 N phases are responsible for this improvement. (orig.)

  8. Case history of tantalum-weld cracking

    International Nuclear Information System (INIS)

    Knorovsky, G.A.

    1982-01-01

    Tantalum welding is normally a routine operation. Of course, the routine involves careful cleaning beforehand, and welding in an atmosphere which excludes reactive gases (O 2 , N 2 , H 2 ). Recently a weld cracking problem was encountered at SNLA despite the fact that normal precautions had been taken. This account reviews what happened, the analytical procedures followed to determine the unusual source of the problem, and the remedy which solved the problem

  9. Origins of Beta Tantalum in Sputtered Coatings

    National Research Council Canada - National Science Library

    Mulligan, C

    2001-01-01

    .... Some of the most recent work has attempted to relate the energetics (i.e., atom/ion energy) of the plasma to the alpha right arrow beta transition. It has been shown that the energetics of the plasma can relate to the most crucial sputtering parameters. The most significant feature of the use of plasma energy to explain the alpha right arrow beta transition is that it relates the formation of beta-tantalum to a quantifiable measure.

  10. Spark plasma sintering of tantalum carbide

    International Nuclear Information System (INIS)

    Khaleghi, Evan; Lin, Yen-Shan; Meyers, Marc A.; Olevsky, Eugene A.

    2010-01-01

    A tantalum carbide powder was consolidated by spark plasma sintering. The specimens were processed under various temperature and pressure conditions and characterized in terms of relative density, grain size, rupture strength and hardness. The results are compared to hot pressing conducted under similar settings. It is shown that high densification is accompanied by substantial grain growth. Carbon nanotubes were added to mitigate grain growth; however, while increasing specimens' rupture strength and final density, they had little effect on grain growth.

  11. Electrodepositions on Tantalum in Alkali Halide Melts

    DEFF Research Database (Denmark)

    Barner, Jens H. Von; Jensen, Annemette Hindhede; Christensen, Erik

    2013-01-01

    Surface layers of tantalum metal were electrodeposited on steel from K2TaF7-LiF-NaF-KF melts. With careful control of the oxide contents dense and adherent deposits could be obtained by pulse plating. In NaCl-KCl-NaF-Na2CO3 and NaCl-KCl-Na2CO3 melts carbonate ions seems to be reduced to carbon in...

  12. Electrodepositions on Tantalum in alkali halide melts

    DEFF Research Database (Denmark)

    Barner, Jens H. Von; Jensen, Annemette Hindhede; Christensen, Erik

    2012-01-01

    Surface layers of tantalum metal were electrodeposited on steel from K 2TaF7-LiF-NaF-KF melts. With careful control of the oxide contents dense and adherent deposits could be obtained by pulse plating. In NaCl-KCl-NaF-Na2CO3 and NaCl-KCl-Na2CO 3 melts carbonate ions seems to be reduced to carbon ...

  13. Formation of nickel-tantalum compounds in tantalum fluoride halide melts

    International Nuclear Information System (INIS)

    Matychenko, Eh.S.; Zalkind, O.A.; Kuznetsov, B.Ya.; Orlov, V.M.; Sukhorzhevskaya, S.L.

    2001-01-01

    Interaction of nickel with NaCl-K 2 TaF 7 melt (14 mol.%) at 750 deg C was studied, the composition of intermetallic compounds formed in Ni-Ta system being analyzed, using the methods of chemical and X-ray phase analyses, IR spectroscopy. It was ascertained that composition of intermetallic compounds (Ni 3 Ta, Ni 2 Ta) depends on K 2 TaF 7 concentration in the melt, metallic tantalum additions, nickel substrate thickness and experiment duration. The mechanism of currentless deposition of tantalum on nickel was considered and the assumption was made that disproportionation reaction lies in the basis of the process [ru

  14. Advances in the chemical vapor deposition (CVD) of Tantalum

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik

    2014-01-01

    The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...

  15. Tantalum: A strategic metal; Tantalo: Un metal estrategico

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Lopez, G.; Lopez-Lopez, J.; Garcia-Yagues, M. R.

    2009-07-01

    In nature, the main source of tantalum is an isomorphous series of minerals containing oxides of tantalum, niobium, iron and manganese, which are collectively known as columbine-tantalite (coltan). Upgraded Ta{sub 2}O{sub 5}-containing tin slags are also used as a secondary source of tantalum. Coltan, either naturally occurring or synthetically produced as concentrates from tin slags, are digested with hydrofluoric and sulphuric acid at an elevated temperature. the aqueous solution of ta-Nb in hydrofluoric acid is extracted in several continuously operating mixer-settler systems or extraction columns with an organic solvent like methyl isobutyl ketone. The organic phase is then scrubbed with 6-15 N H{sub 2}SO{sub 4} to separate the niobium from the tantalum by selective stripping. The tantalum salt is extracted from the organic phase with water or diluted aqueous ammonium fluoride solution, the demands of the solid tantalum capacitor industry for high quality, high surface area tantalum powders have driven improvements in the sodium reduction of K{sub 2}TaF{sub 7}. The much-improved chemistry reflects the many modifications to the process put in place after 1990 and the subsequent improvements in the electrical quality as measured by the performance of tantalum capacitors. (Author) 5 refs.

  16. Human bone ingrowth into a porous tantalum acetabular cup

    Directory of Open Access Journals (Sweden)

    Gregory N. Haidemenopoulos

    2017-11-01

    Full Text Available Porous Tantalum is increasingly used as a structural scaffold in orthopaedic applications. Information on the mechanisms of human bone ingrowth into trabecular metal implants is rather limited. In this work we have studied, qualitatively, human bone ingrowth into a retrieved porous tantalum monoblock acetabular cup using optical microscopy, scanning electron microscopy and energy dispersive X-ray analysis. According to the results and taking into account the short operational life (4 years of the implant, bone ingrowth on the acetabular cup took place in the first two-rows of porous tantalum cells to an estimated depth of 1.5 to 2 mm. The bone material, grown inside the first raw of cells, had almost identical composition with the attached bone on the cup surface, as verified by the same Ca:P ratio. Bone ingrowth has been a gradual process starting with Ca deposition on the tantalum struts, followed by bone formation into the tantalum cells, with gradual densification of the bone tissue into hydroxyapatite. A critical step in this process has been the attachment of bone material to the tantalum struts following the topology of the porous tantalum scaffold. These results provide insight to the human bone ingrowth process into porous tantalum implants.

  17. 21 CFR 886.3100 - Ophthalmic tantalum clip.

    Science.gov (United States)

    2010-04-01

    ... blood vessels in the eye. (b) Classification. Class II (special controls). The device is exempt from the...) MEDICAL DEVICES OPHTHALMIC DEVICES Prosthetic Devices § 886.3100 Ophthalmic tantalum clip. (a) Identification. An ophthalmic tantalum clip is a malleable metallic device intended to be implanted permanently...

  18. Standard specification for tantalum and tantalum alloy plate, sheet, and strip. ASTM standard

    International Nuclear Information System (INIS)

    1998-09-01

    This specification is under the jurisdiction of ASTM Committee B-10 on Reactive and Refractory Metals and Alloys and is the direct responsibility of Subcommittee B10.03 on Niobium and Tantalum. Current edition approved May 10, 1998 and published September 1998. Originally published as B 708-82. Last previous edition was B 708-92

  19. Efficacy of Tantalum Tungsten Alloys for Diffusion Barrier Applications

    Science.gov (United States)

    Smathers, D. B.; Aimone, P. R.

    2017-12-01

    Traditionally either Niobium, Tantalum or a combination of both have been used as diffusion barriers in Nb3Sn Multi-filament wire. Vanadium has also been used successfully but the ultimate RRR of the copper is limited unless an external shell of Niobium is included. Niobium is preferred over Tantalum when alternating current losses are not an issue as the Niobium will react to form Nb3Sn. Pure Tantalum tends to deform irregularly requiring extra starting thickness to ensure good barrier qualities. Our evaluations showed Tantalum lightly alloyed with 3 wt% Tungsten is compatible with the wire drawing process while deforming as well as or better than pure Niobium. Ta3wt%W has been processed as a single barrier and as a distributed barrier to fine dimensions. In addition, the higher modulus and strength of the Tantalum Tungsten alloy improves the overall tensile properties of the wire.

  20. Uptake and retention of insufflated tantalum by lymph nodes

    International Nuclear Information System (INIS)

    Kilpper, R.W.; Bianco, A.; Gibb, F.R.; Landman, S.; Morrow, P.E.

    1976-01-01

    A nonsacrifice, radiographic technique is presented for evaluating the lymph node uptake of radiographically dense materials from the lungs of beagle dogs into which the material was insufflated. With tantalum as the contrast agent, lymph nodes sometimes become visible within 2 days after exposure when the insufflation resulted in radiographic ''alveolarization'' of some of the tantalum. Localization of the material within the nodes was observed in subsequent radiographs as well as persistent retention after as much as 1 year. Through the use of preinsufflation control films and tantalum foils of varying thickness, densitometric methods for determining the amount of tantalum within the lymph nodes are being investigated. Tantalum-182 is being used to follow the lung retention of the material as well as to verify estimates of burdens in harvested nodes. Preliminary lymphokinetic data are presented from experiments utilizing powders of 1 and 5 μm (mean) particle sizes

  1. Fabrication of a tantalum-clad tungsten target for KENS

    International Nuclear Information System (INIS)

    Kawai, Masayoshi; Kikuchi, Kenji; Kurishita, Hiroaki; Li, J.-F.; Furusaka, Michihiro

    2001-01-01

    Since the cold neutron source intensity of KENS (the spallation neutron source at High Energy Accelerator Research Organization) was decreased into about a third of the designed value because a cadmium liner at the cold neutron source deformed and obstructed the neutron beam line, the target-moderator-and-reflector assembly (TMRA) has been replaced by a new one aimed at improving the neutron performance and recovering the cold neutron source. The tantalum target has also been replaced by a tantalum-clad tungsten one. In order to bond the tantalum-clad with the tungsten block, a hot isostatic press (HIP) process was applied and optimized. It was found that gaseous interstitial impurity elements severely attacked tantalum and embrittled, and that the getter materials such as zirconium and tantalum were effective to reduce the embrittlement

  2. Electrochemical properties of lanthanum nitride with calcium nitride additions

    International Nuclear Information System (INIS)

    Lesunova, R.P.; Fishman, L.S.

    1986-01-01

    This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

  3. Superconducting structure with layers of niobium nitride and aluminum nitride

    International Nuclear Information System (INIS)

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

  4. Process for the production of a tantalum and niobium bearing concentrate from a tantalum and niobium bearing ferro-alloy

    International Nuclear Information System (INIS)

    Deweck, J.; Van, H.

    1980-01-01

    In a process for the production of a tantalum and niobium bearing concentrate from a tantalum and niobium bearing ferro-alloy containing tantalum and niobium as carbide, by treating the ferro-alloy in molten state with a controlled amount of an oxidizing agent in order to slag at least most of the tantalum and at least part of the niobium and by separting the so obtained slag phase from the metal phase, the improvement which comprises using air, oxygen enriched air or oxygen as oxidizing agent and adjusting the iron content to the ferro-alloy by adding at least 70% by weight of iron prior to the step of forming the slag so that at least most of the tantalum carbide is dissolved in the molten ferro-alloy

  5. Fracture of an uncemented tantalum patellar component

    Directory of Open Access Journals (Sweden)

    Nathan L. Grimm, MD

    2016-06-01

    Full Text Available A 62-year-old man presented with the acute, atraumatic onset of pain 3 years after uncemented right total knee arthroplasty. He complained of new mechanical locking with the knee held in extension on examination and unable to flex the knee. On the plain radiographs, the patellar component peg was fractured and the plate was dislocated. The knee was immobilized, and revision to a cemented 3-peg component was performed. Fracture of a single-peg, tantalum-backed uncemented patellar component has not been described. Clinical suspicion for this should be given in the setting of acute locking. We recommend revision with a cemented polyethylene component.

  6. Plasma-sprayed tantalum/alumina cermets

    International Nuclear Information System (INIS)

    Kramer, C.M.

    1977-12-01

    Cermets of tantalum and alumina were fabricated by plasma spraying, with the amount of alumina varied from 0 to 65 percent (by volume). Each of four compositions was then measured for tensile strength, elastic modulus, and coefficient of thermal expansion. In general, strength and strain to failure decreased with increasing alumina content: 62 MPa for 100 percent Ta to 19 MPa for 35 v percent Ta. A maximum of 0.1 percent strain was observed for the sprayed 100 percent Ta specimens. The coefficient of thermal expansion measured for the pure Ta was 6.2 (10 -6 )/K

  7. Shock compression and quasielastic release in tantalum

    International Nuclear Information System (INIS)

    Johnson, J.N.; Hixson, R.S.; Tonks, D.L.; Gray, G.T. III

    1994-01-01

    Previous studies of quasielastic release in shock-loaded FCC metals have shown a strong influence of the defect state on the leading edge, or first observable arrival, of the release wave. This is due to the large density of pinned dislocation segments behind the shock front, their relatively large pinning separation, and a very short response time as determined by the drag coefficient in the shock-compressed state. This effect is entirely equivalent to problems associated with elastic moduli determination using ultrasonic methods. This is particularly true for FCC metals, which have an especially low Peierls stress, or inherent lattice resistance, that has little influence in pinning dislocation segments and inhibiting anelastic deformation. BCC metals, on the other hand, have a large Peierls stress that essentially holds dislocation segments in place at low net applied shear stresses and thus allows fully elastic deformation to occur in the complete absence of anelastic behavior. Shock-compression and release experiments have been performed on tantalum (BCC), with the observation that the leading release disturbance is indeed elastic. This conclusion is established by examination of experimental VISAR records taken at the tantalum/sapphire (window) interface in a symmetric-impact experiment which subjects the sample to a peak longitudinal stress of approximately 7.3 GPa, in comparison with characteristic code calculations. copyright 1994 American Institute of Physics

  8. Twinning anisotropy of tantalum during nanoindentation

    Energy Technology Data Exchange (ETDEWEB)

    Goel, Saurav, E-mail: S.GOEL@qub.ac.uk [School of Mechanical and Aerospace Engineering, Queen' s University, Belfast, BT9 5AH (United Kingdom); Beake, Ben [Micro Materials Limited, Willow House, Yale Business Village, Ellice Way, Wrexham LL13 7YL (United Kingdom); Dalton Research Institute, Manchester Metropolitan University, Manchester, M15GD (United Kingdom); Chan, Chi-Wai [School of Mechanical and Aerospace Engineering, Queen' s University, Belfast, BT9 5AH (United Kingdom); Haque Faisal, Nadimul [School of Engineering, Robert Gordon University, Garthdee Road, Aberdeen AB10 7GJ (United Kingdom); Dunne, Nicholas [School of Mechanical and Aerospace Engineering, Queen' s University, Belfast, BT9 5AH (United Kingdom)

    2015-03-11

    Unlike other BCC metals, the plastic deformation of nanocrystalline Tantalum (Ta) during compression is regulated by deformation twinning. Whether or not this twinning exhibits anisotropy was investigated through simulation of displacement-controlled nanoindentation test using molecular dynamics (MD) simulation. MD data was found to correlate well with the experimental data in terms of surface topography and hardness measurements. The mechanism of the transport of material was identified due to the formation and motion of prismatic dislocations loops (edge dislocations) belonging to the 1/2〈111〉 type and 〈100〉 type Burgers vector family. Further analysis of crystal defects using a fully automated dislocation extraction algorithm (DXA) illuminated formation and migration of twin boundaries on the (110) and (111) orientation but not on the (010) orientation and most importantly after retraction all the dislocations disappeared on the (110) orientation suggesting twinning to dominate dislocation nucleation in driving plasticity in tantalum. A significant finding was that the maximum shear stress (critical Tresca stress) in the deformation zone exceeded the theoretical shear strength of Ta (Shear modulus/2π~10.03 GPa) on the (010) orientation but was lower than it on the (110) and the (111) orientations. In light of this, the conventional lore of assuming the maximum shear stress being 0.465 times the mean contact pressure was found to break down at atomic scale.

  9. Evaluation of Polymer Hermetically Sealed Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Polymer cathode tantalum capacitors have lower ESR (equivalent series resistance) compared to other types of tantalum capacitors and for this reason have gained popularity in the electronics design community. Their use allows improved performance of power supply systems along with substantial reduction of size and weight of the components used. However, these parts have poor thermal stability and can degrade in humid environments. Polymer hermetically sealed (PHS) capacitors avoid problems related to environmental degradation of molded case parts and can potentially replace current wet and solid hermetically sealed capacitors. In this work, PHS capacitors manufactured per DLA LAM DWG#13030 are evaluated for space applications. Several lots of capacitors manufactured over period from 2010 to 2014 were tested for the consistency of performance, electrical and thermal characteristics, highly accelerated life testing, and robustness under reverse bias and random vibration conditions. Special attention was given to analysis of leakage currents and the effect of long-term high temperature storage on capacitors in as is condition and after hermeticity loss. The results show that PHS capacitors might be especially effective for low-temperature applications or for system requiring a cold start-up. Additional screening and qualification testing have been recommended to assure the necessary quality of capacitors for space projects.

  10. Ion nitriding of aluminium

    International Nuclear Information System (INIS)

    Fitz, T.

    2002-09-01

    The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

  11. Synthesis and characterization of group V metal carbide and nitride catalysts

    Science.gov (United States)

    Kwon, Heock-Hoi

    1998-11-01

    Group V transition metal carbides and nitrides were prepared via the temperature programmed reaction (TPR) of corresponding oxides with NHsb3 or a CHsb4/Hsb2 mixture. Except for the tantalum compounds, phase-pure carbides and nitrides were prepared. The vanadium carbides and nitrides were the most active and selective catalysts. Therefore the principal focus of the research was the preparation, characterization, and evaluation of high surface area vanadium nitride catalysts. A series of vanadium nitrides with surface areas up to 60 msp2/g was prepared. Thermal gravimetric analysis coupled with x-ray diffraction and scanning electron microscopy indicated that the solid-state reaction proceeded by the sequential reduction of Vsb2Osb5 to VOsb{0.9} and concluded with the topotactic substitution of nitrogen for oxygen in VOsb{0.9}. The transformation of Vsb2Osb5 to VN was pseudomorphic. An experimental design was executed to determine effects of the heating rates and space velocities on the VN microstructures. The heating rates had minor effects on the surface areas and pore size distributions; however, increasing the space velocity significantly increased the surface area. The materials were mostly mesoporous. Oxygen chemisorption on the vanadium nitrides scaled linearly with the surface area. The corresponding O/Vsbsurface ratio was ≈0.6. The vanadium nitrides were active for butane activation and pyridine hydrodenitrogenation. During butane activation, their selectivities towards dehydrogenation products were as high as 98%. The major product in pyridine hydrodenitrogenation was pentane. The reaction rates increased almost linearly with the surface area suggesting that these reactions were structure insensitive. The vanadium nitrides were not active for crotonaldehyde hydrogenation; however, they catalyzed an interesting ring formation reaction that produced methylbenzaldehyde and xylene from crotonaldehyde. A new method was demonstrated for the production of very

  12. Work hardening and plastic equation of state of tantalum

    International Nuclear Information System (INIS)

    Gypen, L.A.; Aernoudt, E.; Deruyttere, A.

    1983-01-01

    The influence of cold deformation on the thermal and athermal components of the flow stress of tantalum was investigated. Up to high deformation levels the strain hardening is due only to the development of internal stress fields; the effective stress remains almost constant. The athermal strain hardening of tantalum is parabolic at low deformation levels (epsilon < 0.5) and linear at high deformation levels, as for other bcc metals. Hart's plastic equation of state is shown to be valid for tantalum at room temperature in the whole deformation range investigated (from epsilon = 0.005 to epsilon = 2.8). (author)

  13. The Chemical Vapour Deposition of Tantalum - in long narrow channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki

    protective layers of tantalum because of the process’ ability to coat complex geometries and its relative ease to control. This work focuses on studying the CVD of tantalum in long narrow channels with the view that the knowledge gained during the project can be used to optimise the commercial coating...... and that there is a major change in morphology between 850 – 900 °C. The effects of system pressure and precursor partial pressure are also studied, and were found to have relevance to the tantalum distribution along the substrates but little effect on the structural morphology of the deposited layer. In the implemented...

  14. Comprehensive perspective on the mechanism of preferred orientation in reactive-sputter-deposited nitrides

    International Nuclear Information System (INIS)

    Kajikawa, Yuya; Noda, Suguru; Komiyama, Hiroshi

    2003-01-01

    Texture control of sputter-deposited nitride films has provoked a great deal of interest due to its technological importance. Despite extensive research, however, the reported results are scattered and discussions about the origin of preferred orientation (PO) are sometimes conflicting, and therefore controversial. The aim of this study is to acquire a clear perspective in order to discuss the origin of PO of sputter-deposited nitrides. Among nitrides, we focus on titanium nitride (TiN), aluminum nitride (AlN), and tantalum nitride (TaN), which are three commonly used nitrides. First, we collected reported experimental results about the relation between operating conditions and PO, because PO is considered to be determined by film formation processes, such as surface diffusion or grain growth, which is affected by operating conditions. We also collected reported results about such PO-determining processes. Then, we categorized the PO-determining processes into an initial stage and a growth stage of film deposition, and further categorized each stage into a vapor-solid interface and a solid-solid interface. Then, we related each stage and interface to film morphology and to PO-determining processes. Finally, based on existing results, previous models, and proposed schema, we discuss the origin of PO. Based on previous experimental results on film morphology, PO of nitride films occurred in the growth stage at the vapor-solid interface, where the sticking process of the precursor and the surface diffusion process determine PO, rather than in the initial stage and in the growth stage at the solid-solid interface. TiN (002) PO, however, seems to be caused in the initial stage at the solid-solid interface

  15. Electronic structure and charge transport in nonstoichiometric tantalum oxide

    Science.gov (United States)

    Perevalov, T. V.; Gritsenko, V. A.; Gismatulin, A. A.; Voronkovskii, V. A.; Gerasimova, A. K.; Aliev, V. Sh; Prosvirin, I. A.

    2018-06-01

    The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaO x<2.5 grown by ion beam sputtering deposition was studied. The TaO x film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaO x is composed of Ta2O5, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaO x from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaO x were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.

  16. Force-dominated non-equilibrium oxidation kinetics of tantalum

    International Nuclear Information System (INIS)

    Kar, Prasenjit; Wang, Ke; Liang, Hong

    2008-01-01

    Using a combined electrochemical and mechanical manipulation technique, we compared the equilibrium and non-equilibrium oxidation processes and states of tantalum. Experimentally, a setup was developed with an electrochemical system attached to a sliding mechanical configuration capable of friction force measurement. The surface chemistry of a sliding surface, i.e., tantalum, was modified through the electrolyte. The mechanically applied force was fixed and the dynamics of the surface was monitored in situ through a force sensor. The formation of non-equilibrium oxidation states of tantalum was found in oxidation limiting environment of acetic acid. An oxidative environment of deionized water saturated with KCl was used as comparison. We proposed a modified Arrhenius-Eyring equation in which the mechanical factor was considered. We found that the mechanical energy induced the non-stable-state reactions leading to metastable oxidation states of tantalum. This equation can be used to predict mechanochemical reactions that are important in many industrial applications

  17. Titrimetric determination of tungsten in its alloys with tantalum

    International Nuclear Information System (INIS)

    Elinson, S.V.; Nezhnova, T.I.

    1982-01-01

    Titrimetric method of tungsten determination in tantalum base alloys has been developed. The method permits to determine 5-10% tungsten in the alloys with relative standard deviation of 0.013. The conditions are created by application of precipitation from homogeieous solutions or by the method of appearing reagents at pH values, which condition gradual hydrolytic precipitation of tantalum, and sodium tungstate remains in the solution and is not sorbed on tantalum hydroxide. After separation of tantalum oxide tungsten is precipitated in the form of lead tungstate by the excess of ti trated solution of lead salt during boiling and then at the background of lead tungstate precipitate without its separation lead excess is titrated by EDTA in the presence of mixed indicator-4-(2-pyridylazo)resocinol and xylenole orange in acetate buffer solution

  18. PREPARATION OF TANTALUM CARBIDE FROM AN ORGANOMETALLIC PRECURSOR

    Directory of Open Access Journals (Sweden)

    C. P. SOUZA

    1999-03-01

    Full Text Available In this work we have synthesized an organometallic oxalic precursor from tantalum oxide. This oxide was solubilized by heating with potassium hydrogen sulfate. In order to precipitate Ta2O5.nH2O, the fused mass obtained was dissolved in a sulfuric acid solution and neutralized with ammonia. The hydrated tantalum oxide precipitated was dissolved in an equimolar solution of oxalic acid/ammonium oxalate. The synthesis and the characterization of the tantalum oxalic precursor are described. Pyrolysis of the complex in a mixture of hydrogen and methane at atmospheric pressure was studied. The gas-solid reaction made it possible to obtain tantalum carbide, TaC, in the powder form at 1000oC. The natural sintering of TaC powder in an inert atmosphere at 1400°C during 10 hours, under inert atmosphere made it possible to densify the carbide to 96% of the theoretical value.

  19. Radiographic examination of tracheal strictures by means of powdered tantalum

    International Nuclear Information System (INIS)

    Scheel, W.; Dippmann, A.

    1979-01-01

    This report deals with the diagnostic value of a tracheobronchography with powdered tantalum in 5 patients who suffer from a severe stricture of the trachea. The own experiences with this method are described. (orig.) [de

  20. Fast-neutrons incident on rotors: Tantalum

    International Nuclear Information System (INIS)

    Smith, Alan B.

    2005-01-01

    Mono-energetic neutrons are elastically and inelastically scattered from elemental tantalum at incident energies of ∼0.3-10.0 MeV. These experimental results are augmented with neutron total-cross-section and additional neutron-scattering data from the literature to form a composite experimental database. The latter is interpreted in the context of optical-statistical and coupled-channels models, including consideration of collective rotations, dispersion effects and other physical properties. The results are compared with those of similar processes in this region of collective nuclei. A regional model is proposed for the interpretation and prediction of such interactions. The model and the experimental results are compared with corresponding values given in ENDF/B-VI

  1. Development of tantalum oxynitride thin films produced by PVD: Study of structural stability

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Department of Materials Science, Transylvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transylvania University, 500036 Brasov (Romania); Barradas, N.P.; Alves, E. [Instituto Superior Técnico, Universidade Técnica de Lisboa Estrada Nacional 10, ao km 139,7 2695-066, Bobadela LRS (Portugal); Moura, C.; Vaz, F. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Cunha, L., E-mail: lcunha@fisica.uminho.pt [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2013-11-15

    The purpose of this work is to study the evolution of the structure and of the thermal stability of a group of tantalum oxynitride thin films, prepared by magnetron sputtering, under the influence of vacuum annealing, up to a temperature of 800 °C. When varying the partial pressure of the reactive gases (P{sub O{sub 2+N{sub 2}}}), during the deposition process, the films change from a structure with a combination of poorly developed crystallites of the tetragonal β-Ta and of the face centred cubic (fcc) Ta(O,N) phases, for the films deposited with low P{sub O2+N2}, to a quasi-amorphous structure, for the films deposited with highest pressures. For intermediate pressures, the films reveal the presence of the fcc-Ta(O,N) structure. This structure corresponds to O atoms substituting some of the N atoms on the fcc-TaN structure and/or N atoms substituting O atoms of the fcc-γ-TaO structure. When subjected to the thermal annealing at 700 °C or higher, the film produced with lowest partial pressure revealed a remarkable structural change. New diffraction peaks appear and can only be attributed to a sub-stoichiometric hexagonal tantalum nitride structure. The film did not reveal any signs of delamination or cracks after all annealing temperatures. The two films produced with highest partial pressure proved to be the most stable. Structurally, they maintain the amorphous structure after all the annealing treatments and, in addition, no cracks or delamination were detected.

  2. The global tantalum industry and Sons of Gwalia Ltd

    International Nuclear Information System (INIS)

    Paull, D.

    2002-01-01

    Sons of Gwalia Ltd., in Perth Australia is a long-term supplier of tantalum (Ta), a valuable rare metal with adequate supply. Tantalum is soft and ductile with high melting and boiling points and a low co-efficient of thermal expansion. It has excellent capacity to store and release electrical charge and offers exceptional resistance to corrosion. Its' main use is in consumer electronics such as mobile phones, laptop computers, DVD players, personal video recorders and MP-3 players. For automotive electronics, tantalum is used for air-bags, audio systems, navigation systems, anti-lock break systems and under the hood vehicle management systems. The super alloy is also in demand by the aerospace industry and for turbine blades for power stations. The total demand of Tantalum in 2000 was 5 million lbs. Demand growth has increased steadily since 1993 with perhaps a slight increase in the past 5 years. Resources are estimated at a 125 year supply based on year 2000 production rates. 41 per cent of the world supply of tantalum is obtained from Australia, 13 per cent from Africa, 16 per cent from America, 22 per cent from Asia. The Greenbushes mine in Australia is the world's largest tantalum mine with 80 million lbs Ta, followed by Australia's Wodgina Mine with 50 million lbs Ta. Both mines are expected to be operational for the next 25 years. 12 figs

  3. Metal Nitrides for Plasmonic Applications

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan

    2012-01-01

    Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

  4. Properties of minor actinide nitrides

    International Nuclear Information System (INIS)

    Takano, Masahide; Itoh, Akinori; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

    2004-01-01

    The present status of the research on properties of minor actinide nitrides for the development of an advanced nuclear fuel cycle based on nitride fuel and pyrochemical reprocessing is described. Some thermal stabilities of Am-based nitrides such as AmN and (Am, Zr)N were mainly investigated. Stabilization effect of ZrN was cleary confirmed for the vaporization and hydrolytic behaviors. New experimental equipments for measuring thermal properties of minor actinide nitrides were also introduced. (author)

  5. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    International Nuclear Information System (INIS)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-01-01

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs

  6. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)

    2015-02-23

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  7. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...... with pH values in the range from pH 2 to 11 have generally given etch rates below 0.04 Å h-l. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex situ...... annealing O2 in the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallization lines are hard to cover. Sputtered tantalum oxide...

  8. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p......H values in the range from pH 2-11 have generally given etch rates below 0.04 Å/h. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex-situ annealing in O2...... the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallisation lines are hard to cover. Sputtered tantalum oxide exhibits high...

  9. Tantalum strength model incorporating temperature, strain rate and pressure

    Science.gov (United States)

    Lim, Hojun; Battaile, Corbett; Brown, Justin; Lane, Matt

    Tantalum is a body-centered-cubic (BCC) refractory metal that is widely used in many applications in high temperature, strain rate and pressure environments. In this work, we propose a physically-based strength model for tantalum that incorporates effects of temperature, strain rate and pressure. A constitutive model for single crystal tantalum is developed based on dislocation kink-pair theory, and calibrated to measurements on single crystal specimens. The model is then used to predict deformations of single- and polycrystalline tantalum. In addition, the proposed strength model is implemented into Sandia's ALEGRA solid dynamics code to predict plastic deformations of tantalum in engineering-scale applications at extreme conditions, e.g. Taylor impact tests and Z machine's high pressure ramp compression tests, and the results are compared with available experimental data. Sandia National Laboratories is a multi program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  10. Development of technology of high-purity compounds of tantalum and niobium with octanol use

    International Nuclear Information System (INIS)

    Majorov, V.G.; Nikolaev, A.I.; Kopkov, V.K.; Baklanova, I.V.; Safonova, L.A.

    2001-01-01

    Effect of composition of solutions and extractant expenditure on tantalum and niobium distribution during extraction by octanol and purification of tantalum and niobium extracts from impurities was studied. Scheme was developed according to which samples of high-pure tantalum and niobium pentaoxides were prepared [ru

  11. Corrosion resistance of tantalum base alloys

    International Nuclear Information System (INIS)

    Gypen, L.A.; Brabers, M.; Deruyttre, A.

    1984-01-01

    The corrosion behaviour of substitutional Ta-Mo, Ta-W, Ta-Nb, Ta-Hf, Ta-Zr, Ta-Re, Ta-Ni, Ta-V, Ta-W-Mo, Ta-W-Nb, Ta-W-Hf and Ta-W-Re alloys has been investigated in various corrosive media, i.e. (1) concentrated sulfuric acid at 250 0 C and 200 0 C, (2) boiling hydrochloric acid of azeotropic composition, (3) concentrated hydrochloric acid at 150 0 C under pressure, (4) HF-Containing solutions and (5) 0.5% H 2 SO 4 at room temperature (anodisation). In highly corrosive media such as concentrated H 2 SO 4 at 250 0 C and concentrated HCl at 150 0 C tantalum is hydrogen embrittled, probably by stress induced precipitation of β-hydride. Both corrosion rate and hydrogen embrittlement in concentrated H 2 SO 4 at 250 0 C are strongly influenced by alloying elements. Small alloying additions of either Mo or Re decrease the corrosion rate and the hydrogen embrittlement, while Hf has the opposite effect. Hydrogen embrittlement in concentrated H 2 SO 4 at 250 0 C is completely eliminated by alloying Ta with 1 to 3 at % Mo (0.5 to 1.5 wt % Mo). These results can be explained in terms of oxygen deficiency of the Ta 2 O 5 film and the electronic structure of these alloys. (orig.) [de

  12. Thermomechanical characterization of pure polycrystalline tantalum

    International Nuclear Information System (INIS)

    Rittel, D.; Bhattacharyya, A.; Poon, B.; Zhao, J.; Ravichandran, G.

    2007-01-01

    The thermomechanical behavior of pure polycrystalline tantalum has been characterized over a wide range of strain rates, using the recently developed shear compression specimen [D. Rittel, S. Lee, G. Ravichandran, Experimental Mechanics 42 (2002) 58-64]. Dynamic experiments were carried out using a split Hopkinson pressure bar, and the specimen's temperature was monitored throughout the tests using an infrared radiometer. The results of the mechanical tests confirm previous results on pure Ta. Specifically, in addition to its significant strain rate sensitivity, it was observed that pure Ta exhibits very little strain hardening at high strain rates. The measured temperature rise in the specimen's gauge was compared to theoretical predictions which assume a total conversion of the mechanical energy into heat (β = 1) [G.I. Taylor, H. Quinney, Proceedings of the Royal Society of London, vol. A, 1934, pp. 307-326], and an excellent agreement was obtained. This result confirms the previous result of Kapoor and Nemat-Nasser [R. Kapoor, S. Nemat-Nasser, Mech. Mater. 27 (1998) 1-12], while a different experimental approach was adopted here. The assumption that β = 1 is found to be justified in this specific case by the lack of dynamic strain hardening of pure Ta. However, this assumption should be limited to non-hardening materials, to reflect the fact that strain hardening implies that part of the mechanical energy is stored into the material's microstructure

  13. Tantalum powder consolidation, modeling and properties

    International Nuclear Information System (INIS)

    Bingert, S.R.; Vargas, V.D.; Sheinberg, H.C.

    1996-01-01

    A systematic approach was taken to investigate the consolidation of tantalum powders. The effects of sinter time, temperature and ramp rate; hot isostatic pressing (HIP) temperature and time; and powder oxygen content on consolidation density, kinetics, microstructure, crystallographic texture, and mechanical properties have been evaluated. In general, higher temperatures and longer hold times resulted in higher density compacts with larger grain sizes for both sintering and HIP'ing. HIP'ed compacts were consistently higher in density than sintered products. The higher oxygen content powders resulted in finer grained, higher density HIP'ed products than the low oxygen powders. Texture analysis showed that the isostatically processed powder products demonstrated a near random texture. This resulted in isotropic properties in the final product. Mechanical testing results showed that the HIP'ed powder products had consistently higher flow stresses than conventionally produced plates, and the sintered compacts were comparable to the plate material. A micromechanics model (Ashby HIP model) has been employed to predict the mechanisms active in the consolidation processes of cold isostatic pressing (CIP), HIP and sintering. This model also predicts the density of the end product and whether grain growth should be expected under the applied processing conditions

  14. Carbochlorination kinetics of tantalum and niobium pentoxides

    International Nuclear Information System (INIS)

    Allain, E.; Gaballah, I.; Garcia, F.; Ferreira, S.; Ayala, J. N.; Hernandez, A.

    1999-01-01

    The carbochlorination kinetics of pure Nb 2 O 5 and Ta 2 O 5 by gas mixture (CL 2 +CO+N 2 ) between 380 and 1,000 degree centigree is studied. A calculation of the standard free energy of the carbochlorination reactions is made. A diagram of the phases stability is drawn. The influence of the gas flow, temperature and the partial pressure of Cl 2 and Co at temperatures below 650 degree centigree on the reaction rate is studied. The apparent activation energy is approximately 75 and 110 kJ/mol for Nb 2 O 5 and Ta 2 O 5 , respectively. At temperatures above 650 degree centigree the Arrhenius diagram presents and anomaly which may be attributed to the decomposition of the COCL 2 formed in situ. The apparent reaction order of the carbochlorination of these oxides against Cl 2 +CO is approximately 2. The carbochlorination rates of these oxides are much greater than those of chlorination by Cl 2 +N 2 . The carbochlorination kinetics of tin furnace slag leaching concentrates containing tantalum and niobium compounds are also studied and compared with the carbochlorination kinetics of the pure oxides. (Author) 14 refs

  15. Dynamic material properties of refractory metals: tantalum and tantalum/tungsten alloys

    International Nuclear Information System (INIS)

    Furnish, M.D.; Lassila, D.H.; Chhabildas, L.C.; Steinberg, D.J.

    1996-01-01

    We have made a careful set of impact wave-profile measurements (16 profiles) on tantalum and tantalum-tungsten alloys at relatively low stresses (to 15 GPa). Alloys used were Ta 96.5 W 3.5 and Ta 86.5 W 13.5 (wt%) with oxygen contents of 30 endash 70 ppm. Information available from these experiments includes Hugoniot, elastic limits, loading rates, spall strength, unloading paths, reshock structure and specimen thickness effects. Hugoniot and spall properties are illustrated, and are consistent with expectations from earlier work. Modeling the tests with the Steinberg-Guinan-Lund rate-dependent material model provides for an excellent match of the shape of the plastic loading wave. The release wave is not well modeled due to the absence of the dynamic Bauschinger effect. There is also a discrepancy between experiments and calculations regarding the relative timing of the elastic and plastic waves that may be due to texture effects. copyright 1996 American Institute of Physics

  16. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  17. Material removal mechanisms in electrochemical-mechanical polishing of tantalum

    International Nuclear Information System (INIS)

    Gao, F.; Liang, H.

    2009-01-01

    Material removal mechanisms in tantalum chemical-mechanical polishing (CMP) and electrochemical-mechanical polishing (ECMP) were investigated using the single frequency electrochemical impedance spectroscopy (EIS). Through measuring the impedance of the tantalum surface, the single frequency EIS scan made it possible to observe the CMP and ECMP processes in situ. The impedance results presented competing mechanisms of removal and formation of a surface oxide layer of tantalum. Analysis indicated that the thickness of the oxide layer formed during polishing was related to the mechanical power correlated to the friction force and the rotating speed. Furthermore, the rate of growth and removal of the oxide film was a function of the mechanical power. This understanding is beneficial for optimization of CMP and ECMP processes.

  18. An investigation of tantalum and niobium contents by nuclear technique

    International Nuclear Information System (INIS)

    Patmasiriwat, N.

    1981-01-01

    The objective of this experimental study was to find suitable nuclear techniques to determine the quantities of niobium and tantalum in columbite. The study has been performed by using radioisotope X-ray fluorescent technique (X RF) and neutron activation analysis (NAA). The results showed a good agreement between these two techniques. Nevertheless, with NAA, if there is uranium in the sample, the spectrum of niobium will be interfered. So practically, on the basis of accuracy and speed of determination, X-ray fluorescence is more suitable than NAA to determine the quantity of niobium while tantalum is preferable to use NAA. The detection limit of niobium and tantalum using the above techniques are 0.661% and 0.1 mg respectively

  19. Behaviour of tantalum- and ceramics implants in the organism

    International Nuclear Information System (INIS)

    Reich, M.

    1987-01-01

    Studies of human and animal tissues after the use of orthopaedic implants were carried out by means of instrumental neutron activation analysis (INAA), as well as studies on the corrosion behaviour of tantalum by means of tracer techniques. After the use of an Al 2 O 3 -ceramic-metal compound prosthesis of the hip joint samples from the joint capsule and the Fascia Lata of 9 patients were studied. The measured Al amounts in the capsule tissues were greater than the normal values by up to 3 orders of magnitude. The corrosion experiment with tantalum was carried out in Ringer's solution as a model of body fluids. Local and systemic changes because of tantalum implants in animal experiments showed massive local stress of the contact tissue as a result of corrosion. Along with this, increased values of Ta were found in the spleen and the liver. (orig./RB) [de

  20. Photo field emission spectroscopy of the tantalum band structure

    International Nuclear Information System (INIS)

    Kleint, Ch.; Radon, T.

    1978-01-01

    Photo field emission (PFE) currents of clean and barium covered tantalum tips have been measured with single lines of the mercury arc spectrum and phase-sensitive detection. Field strength and work function were determined from Fowler-Nordheim plots of the FE currents. Shoulders in the PFE current-voltage characteristics could be correlated to transitions in the band structure of tantalum according to a recently proposed two-step PFE model. A comparison with the relativistic calculations of Mattheiss and the nonrelativistic bands of Petroff and Viswanathan shows that Mattheiss' bands are more appropriate. Beside direct transitions several nondirect transitions from the different features composing the upper two density of states maxima below the Fermi edge of tantalum have been found. (Auth.)

  1. Pressure induced phase transitions in transition metal nitrides: Ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Anurag; Chauhan, Mamta [Advanced Material Research Lab, Indian Institute of Information Technology and Management, Gwalior 474010 (India); Singh, R.K. [Department of Physics, ITM University, Gurgaon 122017 (India)

    2011-12-15

    We have analyzed the stability of transition metal nitrides (TMNs) XN (X = Ti, Zr, Hf, V, Nb, Ta) in their original rocksalt (B1) and hypothetical CsCl (B2) type phases under high compression. The ground state total energy calculation approach of the system has been used through the generalized gradient approximation (GGA) with the Perdew-Burke-Ernzerhof (PBE) type parameterization as exchange correlation functional. In the whole series of nitrides taken into consideration, tantalum nitride is found to be the most stable. We have observed that under compression the original B1-type phase of these nitrides transforms to a B2-type phase. We have also discussed the computation of ground state properties, like the lattice constant (a), bulk modulus (B{sub 0}) and first order pressure derivative of the bulk modulus (B'{sub 0}) of the TMNs and their host elements. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Change in lattice parameter of tantalum due to dissolved hydrogen

    Directory of Open Access Journals (Sweden)

    Gyanendra P. Tiwari

    2012-06-01

    Full Text Available The volume expansion of tantalum due to the dissolved hydrogen has been determined using Bragg equation. The hydrogen was dissolved in the pure tantalum metal at constant temperature (360 °C and constant pressure (132 mbar by varying the duration of hydrogen charging. The amount of dissolved hydrogen was within the solid solubility limit. The samples with different hydrogen concentration were analyzed by X-ray diffraction technique. Slight peak shifts as well as peak broadening were observed. The relative changes of lattice parameters plotted against the hydrogen concentration revealed that the lattice parameters varied linearly with the hydrogen concentration.

  3. Hydrogen adsorption on skeletal rhodium-tantalum electrodes-catalysts

    International Nuclear Information System (INIS)

    Tsinstevich, V.M.; Krejnina, N.M.

    1975-01-01

    Skeleton rhodium-tantalic catalyst electrodes with a tantalum mass percentage of 0 to 100 have been obtained by the methodology of Crupp and others. The hydrogen adsorption is studied through the method of removing the galvano-static and potentiodynamic curves of charging in sulfuric acid and potassium hydroxide. It has been discovered that the maximum adsorption ability relatively to the hydrogen can be observed in an alloy with a 5% tantalum contents. The energetic characteristics of the alloys are higher in alkali than in acid

  4. Electromigration of hydrogen and deuterium in vanadium, niobium, and tantalum

    International Nuclear Information System (INIS)

    Jensen, C.L.

    1977-10-01

    The electric mobility and effective valence of hydrogen and deuterium in vanadium, niobium, tantalum and three niobium-tantalum alloys were measured. A resistance technique was used to directly determine the electric mobility of hydrogen and deuterium at 30 0 C while a steady-state method was used to measure the effective valence. The use of mass spectrographic techniques on a single specimen which contained both hydrogen and deuterium greatly increased the precision with which the isotope effect in the effective valence could be measured

  5. Nitriding of high speed steel

    International Nuclear Information System (INIS)

    Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

    2010-01-01

    Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

  6. Defects in dilute nitrides

    International Nuclear Information System (INIS)

    Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

    2005-01-01

    We provide a brief review our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As Ga antisites and Ga i self interstitials were positively identified.Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides. (author)

  7. 2014 NEPP Tasks Update for Ceramic and Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Presentation describes recent development in research on MnO2, wet, and polymer tantalum capacitors. Low-voltage failures in multilayer ceramic capacitors and techniques to reveal precious metal electrode (PME) and base metal electrode (BME) capacitors with cracks are discussed. A voltage breakdown technique is suggested to select high quality low-voltage BME ceramic capacitors.

  8. Evaluation of residual stress in sputtered tantalum thin-film

    Energy Technology Data Exchange (ETDEWEB)

    Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

    2016-05-15

    Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  9. Laser welding of a beryllium/tantalum collimator

    International Nuclear Information System (INIS)

    Lingenfelter, A.C.; Anglin, C.D.

    1985-01-01

    This report describes the methods utilized in the fabrication of a collimator from 0.001 inch thick beryllium and tantalum foil. The laser welding process proved to be an acceptable method for joining the beryllium in a standing edge joint configuration

  10. Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

    DEFF Research Database (Denmark)

    Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

    2017-01-01

    Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energy...

  11. Multi-scale Modeling of Plasticity in Tantalum.

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Hojun [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Battaile, Corbett Chandler. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Carroll, Jay [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Buchheit, Thomas E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Boyce, Brad [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Weinberger, Christopher [Drexel Univ., Philadelphia, PA (United States)

    2015-12-01

    In this report, we present a multi-scale computational model to simulate plastic deformation of tantalum and validating experiments. In atomistic/ dislocation level, dislocation kink- pair theory is used to formulate temperature and strain rate dependent constitutive equations. The kink-pair theory is calibrated to available data from single crystal experiments to produce accurate and convenient constitutive laws. The model is then implemented into a BCC crystal plasticity finite element method (CP-FEM) model to predict temperature and strain rate dependent yield stresses of single and polycrystalline tantalum and compared with existing experimental data from the literature. Furthermore, classical continuum constitutive models describing temperature and strain rate dependent flow behaviors are fit to the yield stresses obtained from the CP-FEM polycrystal predictions. The model is then used to conduct hydro- dynamic simulations of Taylor cylinder impact test and compared with experiments. In order to validate the proposed tantalum CP-FEM model with experiments, we introduce a method for quantitative comparison of CP-FEM models with various experimental techniques. To mitigate the effects of unknown subsurface microstructure, tantalum tensile specimens with a pseudo-two-dimensional grain structure and grain sizes on the order of millimeters are used. A technique combining an electron back scatter diffraction (EBSD) and high resolution digital image correlation (HR-DIC) is used to measure the texture and sub-grain strain fields upon uniaxial tensile loading at various applied strains. Deformed specimens are also analyzed with optical profilometry measurements to obtain out-of- plane strain fields. These high resolution measurements are directly compared with large-scale CP-FEM predictions. This computational method directly links fundamental dislocation physics to plastic deformations in the grain-scale and to the engineering-scale applications. Furthermore, direct

  12. Phenomenological effets of tantalum incorporation into diamond films: Experimental and first principle studies

    Energy Technology Data Exchange (ETDEWEB)

    Ullah, Mahtab, E-mail: mahtabullah@bzu.edu.pk [Department of Physics, Bahauddin Zakariya University Multan (Pakistan); Rana, Anwar Manzoor; Ahmad, E. [Department of Physics, Bahauddin Zakariya University Multan (Pakistan); Raza, Rizwan [Department of Physics, COMSATS Institute of Information Technology, Lahore-54000 (Pakistan); Hussain, Fayyaz [Department of Physics, Bahauddin Zakariya University Multan (Pakistan); Hussain, Akhtar; Iqbal, Muhammad [Theoretical Physics Division, PINSTECH, P.O. Nilore, Islamabad (Pakistan)

    2016-09-01

    Graphical abstract: - Highlights: • Fabrication of tantalum incorporated diamonds films using HFCVD technique. • Decrease in resistivity by increasing tantalum content in diamond thin films. • Electronic structure calculations of tantalum incorporated diamonds films through VASP code. • A rise of bond length and bond angles by addition of tantalum in the diamond lattice. • Confirmation of decrease of resistivity by adding tantalum due to creation of impurity states in the bandgap. - Abstract: Tantalum (Ta) incorporated diamond films are synthesized on silicon substrate by chemical vapor deposition under gas mixture of CH{sub 4} + H{sub 2}. Characterizations of the resulting films indicate that morphology and resistivity of as-grown diamond films are significantly influenced by the process parameters and the amount of tantalum incorporated in the diamond films. XRD plots reveal that diamond films are composed of TaC along with diamond for higher concentration of tantalum and Ta{sub 2}C phases for lower concentration of tantalum. EDS spectra confirms the existence of tantalum in the diamond films. Resistivity measurements illustrate a sudden fall of about two orders of magnitude by the addition of tantalum in the diamond films. Band structure of Ta-incorporated diamond has been investigated based on density functional theory (DFT) using VASP code. Band structure calculations lead to the semiconducting behavior of Ta-incorporated diamond films because of the creation of defects states inside the band gap extending towards conduction band minimum. Present DFT results support experimental trend of resistivity that with the incorporation of tantalum into diamond lattice causes a decrease in the resistivity of diamond films so that tantalum-incorporated diamond films behave like a good semiconductor.

  13. Optical characterization of gallium nitride

    NARCIS (Netherlands)

    Kirilyuk, Victoria

    2002-01-01

    Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

  14. Mineral-deposit model for lithium-cesium-tantalum pegmatites

    Science.gov (United States)

    Bradley, Dwight C.; McCauley, Andrew D.; Stillings, Lisa L.

    2017-06-20

    Lithium-cesium-tantalum (LCT) pegmatites comprise a compositionally defined subset of granitic pegmatites. The major minerals are quartz, potassium feldspar, albite, and muscovite; typical accessory minerals include biotite, garnet, tourmaline, and apatite. The principal lithium ore minerals are spodumene, petalite, and lepidolite; cesium mostly comes from pollucite; and tantalum mostly comes from columbite-tantalite. Tin ore as cassiterite and beryllium ore as beryl also occur in LCT pegmatites, as do a number of gemstones and high-value museum specimens of rare minerals. Individual crystals in LCT pegmatites can be enormous: the largest spodumene was 14 meters long, the largest beryl was 18 meters long, and the largest potassium feldspar was 49 meters long.Lithium-cesium-tantalum pegmatites account for about one-fourth of the world’s lithium production, most of the tantalum production, and all of the cesium production. Giant deposits include Tanco in Canada, Greenbushes in Australia, and Bikita in Zimbabwe. The largest lithium pegmatite in the United States, at King’s Mountain, North Carolina, is no longer being mined although large reserves of lithium remain. Depending on size and attitude of the pegmatite, a variety of mining techniques are used, including artisanal surface mining, open-pit surface mining, small underground workings, and large underground operations using room-and-pillar design. In favorable circumstances, what would otherwise be gangue minerals (quartz, potassium feldspar, albite, and muscovite) can be mined along with lithium and (or) tantalum as coproducts.Most LCT pegmatites are hosted in metamorphosed supracrustal rocks in the upper greenschist to lower amphibolite facies. Lithium-cesium-tantalum pegmatite intrusions generally are emplaced late during orogeny, with emplacement being controlled by pre-existing structures. Typically, they crop out near evolved, peraluminous granites and leucogranites from which they are inferred to be

  15. In situ observation of the reaction of tantalum with nitrogen in a laser heated diamond anvil cell

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, Alexandra, E-mail: friedrich@kristall.uni-frankfurt.d [Institut fuer Geowissenschaften, Goethe-Universitaet Frankfurt, Altenhoeferallee 1, D-60438 Frankfurt am Main (Germany); Winkler, Bjoern; Bayarjargal, Lkhamsuren [Institut fuer Geowissenschaften, Goethe-Universitaet Frankfurt, Altenhoeferallee 1, D-60438 Frankfurt am Main (Germany); Juarez Arellano, Erick A. [Universidad del Papaloapan, Circuito Central 200, Parque Industrial, Tuxtepec 68301 (Mexico); Morgenroth, Wolfgang; Biehler, Jasmin; Schroeder, Florian [Institut fuer Geowissenschaften, Goethe-Universitaet Frankfurt, Altenhoeferallee 1, D-60438 Frankfurt am Main (Germany); Yan, Jinyuan; Clark, Simon M. [Advanced Light Source, Lawrence Berkeley National Laboratory, MS6R2100, 1 Cyclotron Road, Berkeley, CA 94720-8226 (United States)

    2010-07-16

    Tantalum nitrides were formed by reaction of the elements at pressures between 9(1) and 12.7(5) GPa and temperatures >1600-2000 K in the laser-heated diamond anvil cell. The incorporation of small amount of nitrogen in the tantalum structure was identified as the first reaction product on weak laser irradiation. Subsequent laser heating led to the formation of hexagonal {beta}-Ta{sub 2}N and orthorhombic {eta}-Ta{sub 2}N{sub 3}, which was the stable phase at pressures up to 27 GPa and high temperatures. No evidence was found for the presence of {epsilon}-TaN, {theta}-TaN, {delta}-TaN, Ta{sub 3}N{sub 5}-I or Ta{sub 3}N{sub 5}-II, which was predicted to be the stable phase at P>17 GPa and T=2800 K, at the P,T-conditions of this experiment. The bulk modulus of {eta}-Ta{sub 2}N{sub 3} was determined to be B{sub 0}=319(6) GPa from a 2nd order Birch-Murnaghan equation of state fit to the experimental data, while quantum mechanical calculations using the density functional theory gave a bulk modulus of B{sub 0}=348.0(9) GPa for a 2nd-order fit or B{sub 0}=339(1) GPa and B{sup '}=4.67(9) for a 3rd-order fit. The values show the large incompressibility of this high-pressure phase. From the DFT data the structural compression mechanism could be determined.

  16. Carbochlorination kinetics of tantalum and niobium pentoxides

    Directory of Open Access Journals (Sweden)

    Allain, E.

    1999-08-01

    Full Text Available The carbochlorination kinetics of pure Nb2O5 and Ta2O5 by gas mixture (C12 + CO + N2 between 380 and 1,000 °C is studied. A calculation of the standard free energy of the carbochlorination reactions is made. A diagram of the phases stability is drawn. The influence of the gas flow, temperature and the pardal pressure of Cl2 and CO at temperatures below 650 °C on the reaction rate is studied. The apparent activation energy is approximately 75 and 110 kJ/mol for Nb2Os and Ta2O5, respectively. At temperatures above 650°C the Arrhenius diagram presents an anomaly which may be attributed to the decomposition of the COCl2 formed in situ. The apparent reaction order of the carbochlorination of these oxides against Cl2+CO is approximately 2. The carbochlorination rates of these oxides are much greater than those of chlorination by Cl2 + N2. The carbochlorination kinetics of tin furnace slag leaching concentrates containing tantalum and niobium compounds are also studied and compared with the carbochlorination kinetics of the pure oxides.

    En este trabajo se estudia la cinética de carbocloruración del Nb2O5 y del Ta2O5 por la mezcla de gases (Cl2 + CO + N2 entre 380 y 1000°C. Se hace un cálculo de la energía libre estándar de carbocloruración y se dibujan los diagramas de equilibrio de fases. Se estudia la influencia del flujo de gas, la temperatura y la presión parcial de Cl2 y CO a temperaturas por debajo de 650°C sobre la velocidad de reacción. La energía de activación es aproximadamente 75 y 110 kJ/mol para el Nb2O5 y el Ta2O5, respectivamente. A temperaturas por encima de 650°C, el diagrama de Arrhenius presenta una anomalía que puede ser atribuida a la

  17. Study of electrochemical behaviour of tantalum in molten alkali metal chlorides

    International Nuclear Information System (INIS)

    Bajmakov, A.N.; Ezrokhina, A.M.; Sashinina, O.A.; Shkol'nikov, S.N.

    1985-01-01

    Equilibrium potentials of metallic tantalum in the melt TaCl 5 +KCl-NaCl are studied. Are average degree of tantalum ion oxidation, which are in equilibrium with metallic tantalum, is determined. Anodic behaviour of tantalum in equimolar mixture of potassium and sodium chlorides with Ta and F ion additions is considered. An average degree of oxidation of Ta ions, which transfer into the melt, depending on current density, is determined. It is established that tantalum is dissolved in the regime of diffusional kinetics. It is shown that tantalum corrodes in equimolar mixture of potassium and sodiUm chlorides, at that, corrosion rate increases with introdUction of Ta and F ions into solution. The corrosion is of electrochemical nature and it proceeds in the regime of diffusional kinetics

  18. Separation of niobium and tantalum by paper chromatography and their following spectrographic determination

    International Nuclear Information System (INIS)

    Moroshkina, T.M.; Peres Sanfiel', F.

    1975-01-01

    The paper presents the results of an investigation into the use of water-saturated furfural to separate niobium and tantalum in a 1:1 ratio by means of ascending paper chromatography. The influence of sulphuric acid, ammonium fluoride and hydrofluoric acid concentrations on the completeness of the niobium and tantalum separation was investigated, the extent of the separation being checked by a spectral method. The results indicate that the use of furfural creates favourable conditions for niobium and tantalum separation. The purest tantalum is obtained at concentrations of sulphuric acid 600 k/l, hydrofluoric acid 4.6% and ammonium fluoride 30 g/l. To obtain pure niobium the acid concentrations remain the same but the quantity of ammonium fluoride is doubled. The fluoride ion concentration has a significant effect on the completeness of niobium and tantalum separation. The variation coefficient for the niobium determination is 14%, for the tantalum determination 1O% (author)

  19. Hot pressing of uranium nitride and mixed uranium plutonium nitride

    International Nuclear Information System (INIS)

    Chang, J.Y.

    1975-01-01

    The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

  20. Electrospun Gallium Nitride Nanofibers

    International Nuclear Information System (INIS)

    Melendez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-01-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH 3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  1. Reaction of tantalum-alkyne complexes with isocyanates or acyl cyanides

    International Nuclear Information System (INIS)

    Kataoka, Yasutaka; Oguchi, Yoshiyuki; Yoshizumi, Kazuyuki; Miwatashi, Seiji; Takai, Kazuhiko; Utimoto, Kiitiro

    1992-01-01

    Treatment of alkynes with low-valent tantalum derived from TiCl 5 and zinc produces tantalum-alkyne complexes (not isolated), which react in situ with phenyl isocyanate (or butyl isocyanate) to give (E)-α, β-unsaturated amides stereoselectively. The tantalum-alkyne complexes also react with acyl cyanides in the presence of BF 3 ·OEt 2 to give α-cyanohydrins. In both reactions, filtration of the reaction mixture containing the tantalum-alkyne complexes before addition of isocyanates (or acyl cyanides) is indispensable to obtain good yields. (author)

  2. Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Petrushina, Irina

    2016-01-01

    A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar....... According to the model, the predominant tantalum growth species is TaCl3. The temperature is shown to have a pronounced effect onthe morphology and rate of deposition of the tantalum and an apparent change in deposition mechanism occurs between 850–900 °C, resulting in the deposition rate at 900 °C being...

  3. Corrosion resistance of high-performance materials titanium, tantalum, zirconium

    CERN Document Server

    2012-01-01

    Corrosion resistance is the property of a material to resist corrosion attack in a particular aggressive environment. Although titanium, tantalum and zirconium are not noble metals, they are the best choice whenever high corrosion resistance is required. The exceptionally good corrosion resistance of these high–performance metals and their alloys results from the formation of a very stable, dense, highly adherent, and self–healing protective oxide film on the metal surface. This naturally occurring oxide layer prevents chemical attack of the underlying metal surface. This behavior also means, however, that high corrosion resistance can be expected only under neutral or oxidizing conditions. Under reducing conditions, a lower resistance must be reckoned with. Only very few inorganic and organic substances are able to attack titanium, tantalum or zirconium at ambient temperature. As the extraordinary corrosion resistance is coupled with an excellent formability and weldability these materials are very valua...

  4. Antimicrobial activity of tantalum oxide coatings decorated with Ag nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Huiliang, E-mail: hlc@mail.sic.ac.cn; Meng, Fanhao; Liu, Xuanyong, E-mail: xyliu@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

    2016-07-15

    Silver plasma immersion ion implantation was used to decorate silver nanoparticles (Ag NPs) on tantalum oxide (TO) coatings. The coatings acted against bacterial cells (Staphylococcus epidermidis) in the dark by disrupting their integrity. The action was independent of silver release and likely driven by the electron storage capability of the Schottky barriers established at the interfaces between Ag NPs and the TO support. Moreover, no apparent side effect on the adhesion and differentiation of rat bone mesenchymal stem cells was detected when using Ag NPs-modified TO coatings. These results demonstrate that decoration of tantalum oxide using Ag NPs could be a promising procedure for improving the antibacterial properties for orthopedic and dental implants.

  5. Recent advances in P/M-tantalum products

    International Nuclear Information System (INIS)

    Kumar, P.; Uhlenhut, H.

    2001-01-01

    The metallurgical grade tantalum powder is used for producing parts and mill products. Some of the key requirements include purity, physical characteristics (flow, fill density and compressibility) and interstitial contents. A process to produce 99.99 % pure tantalum powder with less than 150 ppm oxygen has been developed. This powder was consolidated into metallurgical products via conventional P/M processing; resulting products had high purity and low oxygen. It also retained fine grain-size and uniform properties inherent in P/M-derived products. In addition, the desired crystallographic texture was obtained by controlled thermo-mechanical processing (TMP) of the consolidated powder. Fully dense products of this powder were tested for various applications, such as deep drawing, sputtering, ballistics and capacitors. Critical functional requirements in these applications along with the results of evaluations are discussed. (author)

  6. Hydroxyaromatic compounds of tantalum, tungsten, and the lighter actinides

    International Nuclear Information System (INIS)

    Gfaller, H.

    1980-01-01

    Some hydroxyaromatic compounds of the elements tantalum, tungsten, thorium and uranium were prepared as well as the basic materials for these synthesis processes, i.e. metal halides and metal alkoxides. The hydroxyaromatic compounds were studied by elemental analysis, IR spectroscopy, 1 H-NMR spectroscopy (if soluble in suitable solvents) and, in some cases, by X-ray fine structure analysis. (orig./EF) [de

  7. Inter-diffusion study of rhodium and tantalum by RBS

    International Nuclear Information System (INIS)

    Nuttens, V.E.; Hubert, R.L.; Bodart, F.; Lucas, S.

    2005-01-01

    The inter-diffusion of rhodium and tantalum has been studied with the goal of synthesizing an alloy acting as a diffusion barrier for high temperature applications. Rh/Ta sandwiched samples were annealed in vacuum at temperature ranging from 800 to 900 deg. C and from 1000 to 1075 deg. C. The diffusion profiles were obtained by RBS. They suggest the formation of two clearly different phases in each temperature range considered

  8. Random Vibration Testing of Advanced Wet Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2015-01-01

    Advanced wet tantalum capacitors allow for improved performance of power supply systems along with substantial reduction of size and weight of the systems that is especially beneficial for space electronics. Due to launch-related stresses, acceptance testing of all space systems includes random vibration test (RVT). However, many types of advanced wet tantalum capacitors cannot pass consistently RVT at conditions specified in MIL-PRF-39006, which impedes their use in space projects. This requires a closer look at the existing requirements, modes and mechanisms of failures, specifics of test conditions, and acceptance criteria. In this work, different lots of advanced wet tantalum capacitors from four manufacturers have been tested at step stress random vibration conditions while their currents were monitored before, during, and after the testing. It has been shown that the robustness of the parts and their reliability are mostly due to effective self-healing processes and limited current spiking or minor scintillations caused by RVT do not increase the risk of failures during operation. A simple model for scintillations events has been used to simulate current spiking during RVT and optimize test conditions. The significance of scintillations and possible effects of gas generation have been discussed and test acceptance criteria for limited current spiking have been suggested.

  9. Microstructures and phase transformations in interstitial alloys of tantalum

    International Nuclear Information System (INIS)

    Dahmen, U.

    1979-01-01

    The analysis of microstructures, phases, and possible ordering of interstitial solute atoms is fundamental to an understanding of the properties of metal-interstitial alloys in general. As evidenced by the controversies on phase transformations in the particular system tantalum--carbon, our understanding of this class of alloys is inferior to our knowledge of substitutional metal alloys. An experimental clarification of these controversies in tantalum was made. Using advanced techniques of electron microscopy and ultrahigh vacuum techology, an understanding of the microstructures and phase transformations in dilute interstitial tantalum--carbon alloys is developed. Through a number of control experiments, the role and sources of interstitial contamination in the alloy preparation (and under operating conditions) are revealed. It is demonstrated that all previously published work on the dilute interstitially ordered phase Ta 64 C can be explained consistently in terms of ordering of the interstitial contaminants oxygen and hydrogen, leading to the formation of the phases Ta 12 O and Ta 2 H

  10. Carbon monoxide and carbon dioxide interaction with tantalum

    International Nuclear Information System (INIS)

    Belov, V.D.; Ustinov, Yu.K.; Komar, A.P.

    1978-01-01

    The adsorption of carbon monoxide and carbon dioxide on tantalum and the dissolution of these gases in the adsorbent at T >= 300 K have been studied. The flash-filament method (FFM) in a monopole mass-spectrometer and a field emission microscopy was used in the same apparatus. Carbon monoxide and carbon dioxide dissociate on the tantalum surface, carbon monoxide being desorbed in both cases during the flash. The desorption curves of CO reveal three different binding states: two of them (α and β' 1 ) for the adsorbed particles whereas the high temperature desorption state relates to the adsorbate dissolved in the metal. For the β' 1 state of CO the activation energy, the pre-exponential factor and the kinetic order in the kinetic equation of desorption have been estimated. They turned out to be E = 110 kcal/mol, C = 3 X 10 12 sec -1 , and γ = 1. The activation energy of diffusion for CO in tantalum and the energy of outgassing for the metal were found to be 9.4 and 49 kcal/mole, respectively. (Auth.)

  11. Carbon monoxide and carbon dioxide interaction with tantalum

    Energy Technology Data Exchange (ETDEWEB)

    Belov, V D; USTINOV, YU K; KOMAR, A P [AN SSSR, LENINGRAD. FIZIKO-TEKHNICHESKIJ INST.

    1978-03-01

    The adsorption of carbon monoxide and carbon dioxide on tantalum and the dissolution of these gases in the adsorbent at T >= 300 K have been studied. The flash-filament method (FFM) in a monopole mass-spectrometer and a field emission microscopy was used in the same apparatus. Carbon monoxide and carbon dioxide dissociate on the tantalum surface, carbon monoxide being desorbed in both cases during the flash. The desorption curves of CO reveal three different binding states: two of them (..cap alpha.. and ..beta..'/sub 1/) for the adsorbed particles whereas the high temperature desorption state relates to the adsorbate dissolved in the metal. For the ..beta..'/sub 1/ state of CO the activation energy, the pre-exponential factor and the kinetic order in the kinetic equation of desorption have been estimated. They turned out to be E = 110 kcal/mol, C = 3 X 10/sup 12/ sec/sup -1/, and ..gamma.. = 1. The activation energy of diffusion for CO in tantalum and the energy of outgassing for the metal were found to be 9.4 and 49 kcal/mole, respectively.

  12. Recovery of hafnium radioisotopes from a proton irradiated tantalum target

    International Nuclear Information System (INIS)

    Taylor, W.A.; Garcia, J.G.; Hamilton, V.T.; Heaton, R.C.; Jamriska, D.J.; Ott, M.A.; Philips, D.R.; Radzinski, S.D.

    1998-01-01

    The 178m2 Hf nucleus, with its long half-life (31 y) and high-spin isomeric state (16 + ) is desired for new and exotic nuclear physics studies. The Los Alamos Radioisotope Program irradiated a kilogram of natural tantalum at the Los Alamos Meson Physics Facility in early 1981. After fifteen years of decay, this target was ideal for the recovery of 178m2 Hf. There was more than a millicurie of 178m2 Hf produced during this irradiation and there has been a sufficient period of time for most of the other hafnium radioisotopes to decayed away. Traditionally, separation techniques for recovering hafnium isotopes from tantalum targets employ solvent extractions with reagents that are considered hazardous. These techniques are no longer condoned because they generate a mixed-waste (radioactive and hazardous components) that can not be treated for disposal. In this paper we describe a new and unique procedure for the recovery of hafnium radioisotopes from a highly radioactive, proton irradiated, tantalum target using reagents that do not contribute a hazardous waste component. (author)

  13. Method for producing polycrystalline boron nitride

    International Nuclear Information System (INIS)

    Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

    1975-01-01

    A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

  14. Poisoning Experiments Aimed at Discriminating Active and Less-Active Sites of Silica-Supported Tantalum Hydride for Alkane Metathesis

    KAUST Repository

    Saggio, Guillaume; Taoufik, Mostafa; Basset, Jean-Marie; Thivolle-Cazat, Jean

    2010-01-01

    Only 50% of the silica-supported tantalum hydride sites are active in the metathesis of propane. Indeed, more than 45% of the tantalum hydride can be eliminated by a selective oxygen poisoning of inactive sites with no significant decrease

  15. Electrochemical studies of Copper, Tantalum and Tantalum Nitride surfaces in aqueous solutions for applications in chemical-mechanical and electrochemical-mechanical planarization

    Science.gov (United States)

    Sulyma, Christopher Michael

    This report will investigate fundamental properties of materials involved in integrated circuit (IC) manufacturing. Individual materials (one at a time) are studied in different electrochemical environmental solutions to better understand the kinetics associated with the polishing process. Each system tries to simulate a real CMP environment in order to compare our findings with what is currently used in industry. To accomplish this, a variety of techniques are used. The voltage pulse modulation technique is useful for electrochemical processing of metal and alloy surfaces by utilizing faradaic reactions like electrodeposition and electrodissolution. A theoretical framework is presented in chapter 4 to facilitate quantitative analysis of experimental data (current transients) obtained in this approach. A typical application of this analysis is demonstrated for an experimental system involving electrochemical removal of copper surface layers, a relatively new process for abrasive-free electrochemical mechanical planarization of copper lines used in the fabrication of integrated circuits. Voltage pulse modulated electrodissolution of Cu in the absence of mechanical polishing is activated in an acidic solution of oxalic acid and hydrogen peroxide. The current generated by each applied voltage step shows a sharp spike, followed by a double-exponential decay, and eventually attains the rectangular shape of the potential pulses. For the second system in chapter 5, open-circuit potential measurements, cyclic voltammetry and Fourier transform impedance spectroscopy have been used to study pH dependent surface reactions of Cu and Ta rotating disc electrodes (RDEs) in aqueous solutions of succinic acid (SA, a complexing agent), hydrogen peroxide (an oxidizer), and ammonium dodecyl sulfate (ADS, a corrosion inhibitor for Cu). The surface chemistries of these systems are relevant for the development of a single-slurry approach to chemical mechanical planarization (CMP) of Cu lines and Ta barriers in the fabrication of semiconductor devices. It is shown that in non-alkaline solutions of H2O2, the SA-promoted surface complexes of Cu and Ta can potentially support chemically enhanced material removal in low-pressure CMP of surface topographies overlying fragile low-k dielectrics. ADS can suppress Cu dissolution without significantly affecting the surface chemistry of Ta. Chapter 6 discusses anodic corrosion of Ta, which is examined as a possible route to voltage induced removal of Ta for potential applications in electrochemical mechanical planarization (ECMP) of diffusion barriers. This strategy involves electro-oxidation of Ta in the presence of NO3- anions to form mechanically weak surface oxide films, followed by removal of the oxide layers by moderate mechanical abrasion. This NO3 - system is compared with a reference solution of Br -. In both electrolytes, the voltammetric currents of anodic oxidation exhibit oscillatory behaviors in the initial cycles of slow (5 mV s-1) voltage scans. The frequencies of these current oscillations are show signature attributes of localized pitting or general surface corrosion caused by Br- or NO3 -, respectively. Scanning electron microscopy, cyclic voltammetry, polarization resistance measurements, and time resolved Fourier transform impedance spectroscopy provide additional details about these corrosion mechanism. Apart from their relevance in the context of ECMP, the results also address certain fundamental aspects of pitting and general corrosions. The general protocols necessary to combine and analyze the results of D.C. and A.C. electrochemical measurements involving such valve metal corrosion systems are discussed in detail. In chapter 7 potassium salts of certain oxyanions (nitrate, sulfate and phosphate in particular) are shown to serve as effective surface-modifying agents in chemically enhanced, low-pressure chemical mechanical planarization (CMP) of Ta and TaN barrier layers for interconnect structures. The surface reactions that form the basis of this CMP strategy are investigated here in detail using the electrochemical techniques of cyclic voltammetry, open circuit potential analysis, polarization resistance measurements, and Fourier transform impedance spectroscopy. The results suggest that forming structurally weak oxide layers on the CMP samples is a key to achieving the goal of chemically controlled CMP of Ta/TaN at low down-pressures. (Abstract shortened by UMI.)

  16. Zirconium nitride hard coatings

    International Nuclear Information System (INIS)

    Roman, Daiane; Amorim, Cintia Lugnani Gomes de; Soares, Gabriel Vieira; Figueroa, Carlos Alejandro; Baumvol, Israel Jacob Rabin; Basso, Rodrigo Leonardo de Oliveira

    2010-01-01

    Zirconium nitride (ZrN) nanometric films were deposited onto different substrates, in order to study the surface crystalline microstructure and also to investigate the electrochemical behavior to obtain a better composition that minimizes corrosion reactions. The coatings were produced by physical vapor deposition (PVD). The influence of the nitrogen partial pressure, deposition time and temperature over the surface properties was studied. Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and corrosion experiments were performed to characterize the ZrN hard coatings. The ZrN films properties and microstructure changes according to the deposition parameters. The corrosion resistance increases with temperature used in the films deposition. Corrosion tests show that ZrN coating deposited by PVD onto titanium substrate can improve the corrosion resistance. (author)

  17. Pyrochemical reprocessing of nitride fuel

    International Nuclear Information System (INIS)

    Nakazono, Yoshihisa; Iwai, Takashi; Arai, Yasuo

    2004-01-01

    Electrochemical behavior of actinide nitrides in LiCl-KCl eutectic melt was investigated in order to apply pyrochemical process to nitride fuel cycle. The electrode reaction of UN and (U, Nd)N was examined by cyclic voltammetry. The observed rest potential of (U, Nd)N depended on the equilibrium of U 3+ /UN and was not affected by the addition of NdN of 8 wt.%. (author)

  18. Superplastic forging nitride ceramics

    Science.gov (United States)

    Panda, P.C.; Seydel, E.R.; Raj, R.

    1988-03-22

    A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

  19. Nitride stabilized core/shell nanoparticles

    Science.gov (United States)

    Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

    2018-01-30

    Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

  20. Experimental lumbar spine fusion with novel tantalum-coated carbon fiber implant

    DEFF Research Database (Denmark)

    Li, Haisheng; Zou, Xuenong; Woo, Charlotte

    2007-01-01

    the possibility of coating a biocompatible metal layer on top of the carbon fiber material, to improve its biological performance. Tantalum was chosen because of its bone compatibility, based on our previous studies. A novel spinal fusion cage was fabricated by applying a thin tantalum coating on the surface...

  1. A Novel Method for Assessment of Polyethylene Liner Wear in Radiopaque Tantalum Acetabular Cups

    DEFF Research Database (Denmark)

    Troelsen, Anders; Greene, Meridith E; Ayers, David C

    2015-01-01

    Conventional radiostereometric analysis (RSA) for wear is not possible in patients with tantalum cups. We propose a novel method for wear analysis in tantalum cups. Wear was assessed by gold standard RSA and the novel method in total hip arthroplasty patients enrolled in a randomized controlled...

  2. Catalytic Hydroamination of Alkynes and Norbornene with Neutral and Cationic Tantalum Imido Complexes

    Science.gov (United States)

    Anderson, Laura L.; Arnold, John; Bergman, Robert G.

    2005-01-01

    Several tantalum imido complexes have been synthesized and shown to efficiently catalyze the hydroamination of internal and terminal alkynes. An unusual hydroamination/hydroarylation reaction of norbornene catalyzed by a highly electrophilic cationic tantalum imido complex is also reported. Factors affecting catalyst activity and selectivity are discussed along with mechanistic insights gained from stoichiometric reactions. PMID:15255680

  3. Durability of adhesive bonds to uranium alloys, tungsten, tantalum, and thorium

    International Nuclear Information System (INIS)

    Childress, F.G.

    1975-01-01

    Long-term durability of epoxy bonds to alloys of uranium (U-Nb and Mulberry), nickel-plated uranium, thorium, tungsten, tantalum, tantalum--10 percent tungsten, and aluminum was evaluated. Significant strengths remain after ten years of aging; however, there is some evidence of bond deterioration with uranium alloys and thorium stored in ambient laboratory air

  4. Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector

    Science.gov (United States)

    Morohashi, Shin'ichi; Gotoh, Kohtaroh; Yokoyama, Naoki

    2000-06-01

    We have fabricated a tantalum-based Josephson junction for an X-ray detector. The tantalum layer was selected for the junction electrode because of its long quasiparticle lifetime, large X-ray absorption efficiency and stability against thermal cycling. We have developed a buffer layer to fabricate the tantalum layer with a body-centered cubic structure. Based on careful consideration of their superconductivity, we have selected a niobium thin layer as the buffer layer for fabricating the tantalum base electrode, and a tungsten thin layer for the tantalum counter electrode. Fabricated Nb/AlOx-Al/Ta/Nb and Nb/Ta/W/AlOx-Al/Ta/Nb Josephson junctions exhibited current-voltage characteristics with a low subgap leakage current.

  5. Bronchography by tantalum aerosols, an experimental investigation of lung clearance and retention

    International Nuclear Information System (INIS)

    Causse, Andre.

    1974-01-01

    Lung clearance of tantalum used as contrast medium has been studied in three animal species: rat, monkey and cat. In rats and monkeys, 80 to 90 percent of the inhaled tantalum was removed with a half life of 10 to 30 hr, but the residual fraction was removed with a half life longer than 100 days; consequently persistent roentgenographic pictures could be observed. These results were in accordance with those obtained by other authors studying dogs and men (accidental inhalation of radioactive tantalum). In cats, about 98 percent was removed with a half life of 15 hr and the remaining fraction with a half life of 18 days. In the three species, the physiological lung clearance mechanisms did not seem disturbed. Microscopic examination showed the peribronchiolar localisation of remaining tantalum in rats and monkeys, with proliferation of granulomes and fibrotic reaction. These results must induce to the greatest care when using tantalum in man in order to outline peripheral airways [fr

  6. Spectrographic determination of impurities in high-purity tantalum oxide and niobium oxide

    International Nuclear Information System (INIS)

    Anderson, S.T.G.; Russell, G.M.

    1990-01-01

    The development of spectrographic methods by direct current arc excitation and carrier distillation for the determination of impurities in tantalum and niobium oxides are described. Iron, silicon, aluminium, titanium, calcium, silver, tin, magnesium, and manganese can be determined in tantalum oxide and niobium oxide in concentrations ranging from 3 to 300 p.p.m. Niobium can be determined in tantalum oxide in concentrations ranging from 10 to 300 p.p.m. Tantalum cannot be determined in niobium oxide, and tungsten cannot be determined in either matrix as a result of the absence of sensitive lines in the spectra of these elements. Relative standard deviations of analyte element concentrations are in the region of 0,18 for tantalum oxide samples, and 0,13 for niobium oxide samples. A detailed laboratory method is included. 4 figs., 4 tabs., 3 refs

  7. HIP (hot isostatic pressing) sintering of Tantalum (Ta) and tantalum carbide (TaC) powder mixture: relations between microstructure and properties

    International Nuclear Information System (INIS)

    Valin, F.; Schnedecker, M.

    1994-01-01

    HIP sintering at 1630 C and 195 MPa, during 2 hours, can be used for complete densification of mixtures of commercial tantalum carbide and tantalum powders. HIPed material properties are depending upon initial compositions. For C/Ta ratios inferior to 80%, the monocarbide structure is preserved. A partial ordering of the carbon vacancies will result, for TaC(0.80), in microhardness maximization. The microstructurally homogenous TaC(0.45) shows an excellent toughness. 2 figs., 2 refs

  8. Leachability of nitrided ilmenite in hydrochloric acid

    CSIR Research Space (South Africa)

    Swanepoel, JJ

    2010-10-01

    Full Text Available Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200 °C) chlorination reaction...

  9. Aluminum nitride insulating films for MOSFET devices

    Science.gov (United States)

    Lewicki, G. W.; Maserjian, J.

    1972-01-01

    Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

  10. Leachability of nitrided ilmenite in hydrochloric acid

    OpenAIRE

    Swanepoel, J.J.; van Vuuren, D.S.; Heydenrych, M.

    2011-01-01

    Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200°C) chlorination reaction will not react with chlorine. It is therefore necessary to remove as much iron as possible from the nitrided ilmenite. Hydrochloric acid leaching is a possible process route to remove metallic iron from nitrided ilmenite without excessive dissolution o...

  11. The pressure, internal energy, and conductivity of tantalum plasma

    Energy Technology Data Exchange (ETDEWEB)

    Apfelbaum, E.M. [Russian Academy of Sciences, Joint Institute for High Temperatures, Department of Computational Physics, Moscow (Russian Federation)

    2017-11-15

    The pressure, internal energy, and conductivity of a tantalum plasma were calculated at the temperatures 10-100 kK and densities less than 3 g/cm{sup 3}. The plasma composition, pressure, and internal energy were obtained by means of the corresponding system of the coupled mass action law equations. We have considered atom ionization up to +3. The conductivity was calculated within the relaxation time approximation. Comparisons of our results with available measurements and calculation data show good agreement in the area of correct applicability of the present model. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Trace diffusion of different nuclear reactions products in polycrystalline tantalum

    International Nuclear Information System (INIS)

    Beyer, G.J.; Fromm, W.D.; Novgorodov, A.F.

    1976-07-01

    Measurements of the lattice diffusion coefficients for carrier free isotopes of Hf, Lu, Yb, Tm, Tb, Gd, Eu, Ba, Cs, Y, Sr, Rb and As in polycrystalline tantalum were made over the temperature range 1700 Fsub(As)>Fsub(lanthanides)>Fsub(Sr)>Fsub(Ba)>Fsub(Hf)>Fsub(Rb)>Fsub(Cs). The data indicate, that the Arrhenius relation was obeyed over the entire temperature range. Within the lanthanide-group no differences in the diffusion velocities could be detected, this fact points to a diffusion mechanism of Me 3+ -ions of lanthanides, Me 2+ -ions of earth alkaline elements and Me + -ions of alkaline elements. (author)

  13. Diffusion-Cooled Tantalum Hot-Electron Bolometer Mixers

    Science.gov (United States)

    Skalare, Anders; McGrath, William; Bumble, Bruce; LeDuc, Henry

    2004-01-01

    A batch of experimental diffusion-cooled hot-electron bolometers (HEBs), suitable for use as mixers having input frequencies in the terahertz range and output frequencies up to about a gigahertz, exploit the superconducting/normal-conducting transition in a thin strip of tantalum. The design and operation of these HEB mixers are based on mostly the same principles as those of a prior HEB mixer that exploited the superconducting/normal- conducting transition in a thin strip of niobium and that was described elsewhere.

  14. Low-temperature diffusion of hydrogen isotopes in tantalum

    International Nuclear Information System (INIS)

    Peichl, R.; Ziegler, P.; Weidinger, A.

    1987-01-01

    The mobility of hydrogen and deuterium in tantalum is investigated in the temperature range between 4.2 and 30 K. On the time scale of the present experiment (25 μs) we find that hydrogen begins to move above 15 K whereas deuterium remains immobile at least up to 30 K. Since the interpretation of the data depends critically on the exact hydrogen configurations a major part of the paper is devoted to this problem. We suggest that hydrogen can exist in fairly localized or more extended states depending on the local homogeneity of the crystal. (orig.)

  15. Fabrication of vanadium nitride by carbothermal nitridation reaction

    International Nuclear Information System (INIS)

    Wang Xitang; Wang Zhuofu; Zhang Baoguo; Deng Chengji

    2005-01-01

    Vanadium nitride is produced from V 2 O 5 by carbon-thermal reduction and nitridation. When the sintered temperature is above 1273 K, VN can be formed, and the nitrogen content of the products increased with the firing temperature raised, and then is the largest when the sintered temperature is 1573 K. The C/V 2 O 5 mass ratio of the green samples is the other key factor affecting on the nitrogen contents of the products. The nitrogen content of the products reaches the most when the C/V 2 O 5 mass ratio is 0.33, which is the theoretical ratio of the carbothermal nitridation of V 2 O 5 . (orig.)

  16. Simulation of the Nitriding Process

    Science.gov (United States)

    Krukovich, M. G.

    2004-01-01

    Simulation of the nitriding process makes it possible to solve many practical problems of process control, prediction of results, and development of new treatment modes and treated materials. The presented classification systematizes nitriding processes and processes based on nitriding, enables consideration of the theory and practice of an individual process in interrelation with other phenomena, outlines ways for intensification of various process variants, and gives grounds for development of recommendations for controlling the structure and properties of the obtained layers. The general rules for conducting the process and formation of phases in the layer and properties of the treated surfaces are used to create a prediction computational model based on analytical, numerical, and empirical approaches.

  17. Direct electroplating of copper on tantalum from ionic liquids in high vacuum: origin of the tantalum oxide layer.

    Science.gov (United States)

    Schaltin, Stijn; D'Urzo, Lucia; Zhao, Qiang; Vantomme, André; Plank, Harald; Kothleitner, Gerald; Gspan, Christian; Binnemans, Koen; Fransaer, Jan

    2012-10-21

    In this paper, it is shown that high vacuum conditions are not sufficient to completely remove water and oxygen from the ionic liquid 1-ethyl-3-methylimidazolium chloride. Complete removal of water demands heating above 150 °C under reduced pressure, as proven by Nuclear Reaction Analysis (NRA). Dissolved oxygen gas can only be removed by the use of an oxygen scavenger such as hydroquinone, despite the fact that calculations show that oxygen should be removed completely by the applied vacuum conditions. After applying a strict drying procedure and scavenging of molecular oxygen, it was possible to deposit copper directly on tantalum without the presence of an intervening oxide layer.

  18. Synergistic helium and deuterium blistering in tungsten–tantalum composites

    Energy Technology Data Exchange (ETDEWEB)

    Dias, M., E-mail: marta.dias@itn.pt [Associação Euratom/IST, Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Mateus, R.; Catarino, N.; Franco, N. [Associação Euratom/IST, Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Nunes, D. [CENIMAT-I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Correia, J.B. [LNEG, Laboratório Nacional de Energia e Geologia, Estrada do Paço do Lumiar, 1649-038 Lisboa (Portugal); Carvalho, P.A. [Associação Euratom/IST, Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); ICEMS, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Hanada, K. [AIST, National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, 305-8564 Ibaraki (Japan); Sârbu, C. [National Institute of Materials and Physics, 105bis Atomistilor street, 077125 Magurele-Ilfov (Romania); and others

    2013-11-15

    Abstruct: Tungsten–tantalum composites with 10 and 20 at.% Ta were prepared by ball milling W powder with Ta fibers and by consolidating the milled materials with spark plasma sintering. The composites were implanted at room temperature with He{sup +} (30 keV with a fluence 5 × 10{sup 21} at/m{sup 2}) and/or D{sup +} (15 keV with a fluence 5 × 10{sup 21} at/m{sup 2}) ion beams. The materials were studied by scanning and high-resolution transmission electron microscopy, both coupled with energy dispersive X-ray spectroscopy, and by X-ray diffraction, Rutherford backscattering spectrometry and nuclear reaction analysis. The microstructure observations revealed that the milling operation resulted in severe fragmentation of the Ta fibers. Furthermore, during the consolidation process the Ta phase acted as oxygen getter and reduced the W oxide present in the original material. The surface of the tungsten–tantalum composites implanted with D{sup +} remained essentially unaltered, while the materials implanted with He{sup +} evidenced blisters on the Ta-rich regions. D retention in the composites increased with He{sup +} pre-implantation.

  19. Synergistic helium and deuterium blistering in tungsten–tantalum composites

    International Nuclear Information System (INIS)

    Dias, M.; Mateus, R.; Catarino, N.; Franco, N.; Nunes, D.; Correia, J.B.; Carvalho, P.A.; Hanada, K.; Sârbu, C.

    2013-01-01

    Abstruct: Tungsten–tantalum composites with 10 and 20 at.% Ta were prepared by ball milling W powder with Ta fibers and by consolidating the milled materials with spark plasma sintering. The composites were implanted at room temperature with He + (30 keV with a fluence 5 × 10 21 at/m 2 ) and/or D + (15 keV with a fluence 5 × 10 21 at/m 2 ) ion beams. The materials were studied by scanning and high-resolution transmission electron microscopy, both coupled with energy dispersive X-ray spectroscopy, and by X-ray diffraction, Rutherford backscattering spectrometry and nuclear reaction analysis. The microstructure observations revealed that the milling operation resulted in severe fragmentation of the Ta fibers. Furthermore, during the consolidation process the Ta phase acted as oxygen getter and reduced the W oxide present in the original material. The surface of the tungsten–tantalum composites implanted with D + remained essentially unaltered, while the materials implanted with He + evidenced blisters on the Ta-rich regions. D retention in the composites increased with He + pre-implantation

  20. Cracking and delamination of vapor-deposited tantalum films

    International Nuclear Information System (INIS)

    Fisher, R.M.; Duan, J.Z.; Liu, J.B.

    1990-01-01

    This paper reports on tantalum films which begin to crack and spall during vapor deposition on glass at a thickness of 180 nm. Islands and ribbons, 10 - 30 μm in size, delaminate by crack growth along the Ta/glass interface for several μm after which the crack penetrates into the glass to a depth of 0.5 - 1 μm and complete spalling occurs. X-ray diffraction showed that about 50% of the original bct, β-tantalum, phase had transformed to the bcc α-Ta phase. When Ta was deposited on glass that was first covered with 52 nm of copper, spalling was observed to begin at a thickness of 105 nm. In this case, the film first cracks and then peels along the Cu/glass interface and curls into scrolls indicating the presence of a small stress gradient. X-ray diffraction of the as-deposited film, and electron diffraction of ion-milled flakes, showed that the Ta films deposited on Cu-coated glass almost completely transform to bcc α-Ta. The critical thickness for delamination along the Cu/glass interface is about 1/2 that for cracking in the glass substrate when an intermediate layer of Cu is not present. All of the above findings are in good agreement with previous observations on Cr films

  1. Characterization of a texture gradient in tantalum plate

    International Nuclear Information System (INIS)

    Wright, S.I.; Gray, G.T. III.

    1994-01-01

    Clark et al. have shown that significant texture gradients can be produced in rolled tantalum plate and that the strength of the gradient is dependent on the processing path. Texture gradients are often ignored because they are time consuming to characterize and add significant complexity to materials modeling. The variation in texture through the thickness of rolled materials is most commonly measured by sectioning samples to different depths through the thickness of the plate and then measuring the texture from these section planes by X-ray diffraction. A new technique based on automatic indexing of electron backscatter diffraction patterns in the scanning electron microscope enables spatially specific orientations to be measured in a practical manner. This technique allows spatial variations in texture to be measured directly enabling gradients in texture to be investigated in more detail than previously possible. This data can be used directly in coupled finite-element/polycrystal-plasticity models to simulate the effects of variations in texture on the plastic behavior of polycrystals. This work examines the variation in texture through the thickness of a tantalum plate and its resultant effect on the compressive deformation of samples prepared from the plate. The characterization of the texture gradient using the automatic point-by-point measurement technique mentioned above is described in detail. The effect of the gradient on the plastic response of through-thickness compression tests is also discussed

  2. NEPP Evaluation of Automotive Grade Tantalum Chip Capacitors

    Science.gov (United States)

    Sampson, Mike; Brusse, Jay

    2018-01-01

    Automotive grade tantalum (Ta) chip capacitors are available at lower cost with smaller physical size and higher volumetric efficiency compared to military/space grade capacitors. Designers of high reliability aerospace and military systems would like to take advantage of these attributes while maintaining the high standards for long-term reliable operation they are accustomed to when selecting military-qualified established reliability tantalum chip capacitors (e.g., MIL-PRF-55365). The objective for this evaluation was to assess the long-term performance of off-the-shelf automotive grade Ta chip capacitors (i.e., manufacturer self-qualified per AEC Q-200). Two (2) lots of case size D manganese dioxide (MnO2) cathode Ta chip capacitors from 1 manufacturer were evaluated. The evaluation consisted of construction analysis, basic electrical parameter characterization, extended long-term (2000 hours) life testing and some accelerated stress testing. Tests and acceptance criteria were based upon manufacturer datasheets and the Automotive Electronics Council's AEC Q-200 qualification specification for passive electronic components. As-received a few capacitors were marginally above the specified tolerance for capacitance and ESR. X-ray inspection found that the anodes for some devices may not be properly aligned within the molded encapsulation leaving less than 1 mil thickness of the encapsulation. This evaluation found that the long-term life performance of automotive grade Ta chip capacitors is generally within specification limits suggesting these capacitors may be suitable for some space applications.

  3. Bacterial adherence to tantalum versus commonly used orthopedic metallic implant materials.

    Science.gov (United States)

    Schildhauer, Thomas A; Robie, Bruce; Muhr, Gert; Köller, Manfred

    2006-07-01

    Evaluation of bacterial adhesion to pure tantalum and tantalum-coated stainless steel versus commercially pure titanium, titanium alloy (Ti-6Al-4V), and grit-blasted and polished stainless steel. Experimental in vitro cell culture study using Staphylococcus aureus and Staphylococcus epidermidis to evaluate qualitatively and quantitatively bacterial adherence to metallic implants. A bacterial adhesion assay was performed by culturing S. aureus (ATCC 6538) and S. epidermidis (clinical isolate) for one hour with tantalum, tantalum-coated stainless steel, titanium, titanium alloy, grit-blasted and polished stainless steel metallic implant discs. Adhered living and dead bacteria were stained using a 2-color fluorescence assay. Adherence was then quantitatively evaluated by fluorescence microscopy and digital image processing. Qualitative adherence of the bacteria was analyzed with a scanning electron microscope. The quantitative data were related to the implant surface roughness (Pa-value) as measured by confocal laser scanning microscopy. Bacterial adherence of S. aureus varied significantly (p = 0.0035) with the type of metallic implant. Pure tantalum presented with significantly (p titanium alloy, polished stainless steel, and tantalum-coated stainless steel. Furthermore, pure tantalum had a lower, though not significantly, adhesion than commercially pure titanium and grit-blasted stainless steel. Additionally, there was a significantly higher S. aureus adherence to titanium alloy than to commercially pure titanium (p = 0.014). S. epidermidis adherence was not significantly different among the tested materials. There was no statistically significant correlation between bacterial adherence and surface roughness of the tested implants. Pure tantalum presents with a lower or similar S. aureus and S. epidermidis adhesion when compared with commonly used materials in orthopedic implants. Because bacterial adhesion is an important predisposing factor in the development of

  4. Precipitation of metal nitrides from chloride melts

    International Nuclear Information System (INIS)

    Slater, S.A.; Miller, W.E.; Willit, J.L.

    1996-01-01

    Precipitation of actinides, lanthanides, and fission products as nitrides from molten chloride melts is being investigated for use as a final cleanup step in treating radioactive salt wastes generated by electrometallurgical processing of spent nuclear fuel. The radioactive components (eg, fission products) need to be removed to reduce the volume of high-level waste that requires disposal. To extract the fission products from the salt, a nitride precipitation process is being developed. The salt waste is first contacted with a molten metal; after equilibrium is reached, a nitride is added to the metal phase. The insoluble nitrides can be recovered and converted to a borosilicate glass after air oxidation. For a bench-scale experimental setup, a crucible was designed to contact the salt and metal phases. Solubility tests were performed with candidate nitrides and metal nitrides for which there are no solubility data. Experiments were performed to assess feasibility of precipitation of metal nitrides from chloride melts

  5. Spectrochemical determination of tantalum in plutonium metal using direct current plasma emission spectrometry

    International Nuclear Information System (INIS)

    Fadeff, S.K.; Morris, W.F.

    1983-01-01

    Tantalum is determined by direct current plasma spectrometry after separation of plutonium from solution as PuF 3 . After centrifugation of the PuF 3 precipitate, a low level of plutonium remains in solution in sufficient quantity to cause spectral interferences. It is necessary to determine the plutonium by dc plasma spectrometry and apply a correction to determine low tantalum concentrations with good accuracy and precision. Tantalum can be determined down to 0.4 ppM in solution with a relative standard deviation of 10 percent. Better precision can be achieved at higher concentrations. The procedure is simple and convenient for glovebox work. 5 references, 1 figure, 1 table

  6. Synthesis and characterization of tantalum organometallic complexes. Catalytic activity for olefins

    International Nuclear Information System (INIS)

    Baley, A.S.

    1990-11-01

    Synthesis of monoaryloxy (alcoxy) neopentyl compounds is investigated. The tantalum-oxygen bond is formed by two parallel ways from TaCl 5 or TaR 2 Cl 3 with R = neopentyl and the tantalum carbon bond from a neopentyl derivative of the main series. Some compounds were isolated and characterized by NMR, elemental analysis and sometimes X-ray structure, some others are characterized in solution only. Catalytic effect is tested by ethylene dimerization and olefin polymerization. Reactivity of tantalum aryloxy neopentyl in respect to complexing and chelating ligands is studied for preparation of neopentylidene complexes

  7. Structural characterisation of oxygen diffusion hardened alpha-tantalum PVD-coatings on titanium.

    Science.gov (United States)

    Hertl, C; Koll, L; Schmitz, T; Werner, E; Gbureck, U

    2014-08-01

    Titanium substrates were coated with tantalum layers of 5 μm thickness using physical vapour deposition (PVD). The tantalum layers showed a (110)-preferred orientation. The coated samples were hardened by oxygen diffusion. Using X-ray diffraction the crystallographic structure of the tantalum coatings was characterised, comparing untreated and diffusion hardened specimen conditions. Oxygen depth profiles were determined by glow discharge spectrometry. The hardening effect of the heat treatment was examined by Vickers microhardness testing. The increase of surface hardness caused by oxygen diffusion was at least 50%. Copyright © 2014 Elsevier B.V. All rights reserved.

  8. Reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Porz, F.

    1982-10-01

    Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

  9. Tantalum oxide-based compounds as new non-noble cathodes for polymer electrolyte fuel cell

    International Nuclear Information System (INIS)

    Ishihara, Akimitsu; Tamura, Motoko; Matsuzawa, Koichi; Mitsushima, Shigenori; Ota, Ken-ichiro

    2010-01-01

    Tantalum oxide-based compounds were examined as new non-noble cathodes for polymer electrolyte fuel cell. Tantalum carbonitride powder was partially oxidized under a trace amount of oxygen gas at 900 o C for 4 or 8 h. Onset potential for oxygen reduction reaction (ORR) of the specimen heat-treated for 8 h was 0.94 V vs. reversible hydrogen electrode in 0.1 mol dm -3 sulfuric acid at 30 o C. The partial oxidation of tantalum carboniride was effective to enhance the catalytic activity for the ORR. The partially oxidized specimen with highest catalytic activity had ca. 5.25 eV of ionization potential, indicating that there was most suitable strength of the interaction of oxygen and tantalum on the catalyst surface.

  10. Thermal and electrical conductivities of high purity tantalum

    International Nuclear Information System (INIS)

    Archer, S.L.

    1978-01-01

    The electrical resistivity and thermal conductivity of three high purity tantalum samples have been measured as functions of temperature over a temperature range of 5K to 65K. Sample purities ranged up to a resistivity ratio of 1714. The highest purity sample had a residual resistivity of .76 x 10 -10 OMEGA-m. The intrinsic resistivity varied as T 3 . 9 from 10K to 31K. The thermal conductivity of the purest sample had a maximum of 840 W/mK at 9.8K. The intrinsic thermal resistivity varied as T 2 . 4 from 10K to 35K. At low temperatures electrons were scattered primarily by impurities and by phonons with both interband and intraband transitions observed. The electrical and thermal resistivity is departed from Matthiessen's rule at low temperatures

  11. Raman spectra of ruthenium and tantalum trimers in argon matrices

    Science.gov (United States)

    Fang, Li; Shen, Xiaole; Chen, Xiaoyu; Lombardi, John R.

    2000-12-01

    The resonance Raman spectra of ruthenium trimers (Ru 3) in argon matrices have been obtained. Three resonance Raman transitions were observed between 570 and 590 nm. Two of them (303.4 and 603.7 cm -1) are assigned to the totally symmetric vibrational progression, giving k e=1.86 mdyne/ Å. The line at 581.5 cm-1 is assigned as the origin of a low-lying electronic state. We also report on the observation of a resonance Raman spectrum of tantalum trimers (Ta 3). Observed lines include 251.2 and 501.9 cm-1 which we assign to the fundamental and the first overtone of the symmetric stretch in Ta 3. This gives k e=2.25 mdyne/ Å.

  12. Diffusion coefficient of hydrogen in niobium and tantalum

    International Nuclear Information System (INIS)

    Vargas, P.; Miranda, L.; Lagos, M.

    1988-08-01

    We show that the current data on hydrogen diffusion in Tantalum between 15K and 550K and in Niobium between 135K and 400K can be quantitatively explained by the small polaron theory. The experimental data can be understood assuming ground-state to ground-state tunneling between interstitial sites with tetrahedral symmetry plus an activated contribution due to tunneling between excited states having octahedral symmetry. The break of the diffusivity curve at T approx. = 250K follows naturally. It evidences the transition between the tetrahedral and octahedral hopping. For Ta the second break of the diffusivity curve at T approx. = 20K indicated the recovering of the ground-state hopping with tetrahedral symmetry. Below T approx. = 10K for Ta and T approx. = 7K for Nb the diffusion coefficient becomes independent of T. (author). 17 refs, 3 figs, 1 tab

  13. KAJIAN SIFAT OPTIK FILM TIPIS BST DIDADAH NIOBIUM DAN TANTALUM

    Directory of Open Access Journals (Sweden)

    Farida Huriawati

    2016-11-01

    Full Text Available In this research thin films of Barium Strontium Titanate (BST has been synthesis with different compositions Ba0,5Sr0,5TiO3 and Ba0,25Sr0,75TiO3 which doped by Nb2O5 (Niobium and Ta2O5 (Tantalum on Si (100 type-p substrate. Thin films were produced by chemical solution deposition technique (CSD and spin coating technique with annealing temperature at 850oC, 900oC dan 950oC. Rotation velocity at 3000 rpm and time of rotation is 30 seconds. Characterization of Films is optic Characterization (absorbance ana reflectance. From the Characterizations were obtained BNST thin film with 5% doping and anneling temperature at 8500C as photodiode light sensor which applied in electronic circuit.

  14. Dielectric properties of tantalum powder with broccoli-like morphology

    Energy Technology Data Exchange (ETDEWEB)

    Baba, Masahiko [Department of Energy Science and Technology, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan); Suzuki, Ryosuke O [Department of Energy Science and Technology, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)

    2005-04-19

    Metallic tantalum powder with broccoli-like morphology, consisting of spherical fine particles and of long rods or thin plates, was prepared in a hundred gram scale by calcium reduction of Ta{sub 2}O{sub 5} in molten CaCl{sub 2}. The properties as electrolytic capacitor were evaluated in comparison with commercial powder obtained by Na reduction and with powder consisting of only fine particles obtained by Ca reduction. The capacitance was larger than that of conventional powder with the same surface area, because the broccoli-like powder showed a strong resistance against shrinkage during high temperature annealing due to the framework of branches. The powder with new broccoli-like morphology can circumvent the conventional treatments for grain size control and gas removal.

  15. Dielectric properties of tantalum powder with broccoli-like morphology

    International Nuclear Information System (INIS)

    Baba, Masahiko; Suzuki, Ryosuke O.

    2005-01-01

    Metallic tantalum powder with broccoli-like morphology, consisting of spherical fine particles and of long rods or thin plates, was prepared in a hundred gram scale by calcium reduction of Ta 2 O 5 in molten CaCl 2 . The properties as electrolytic capacitor were evaluated in comparison with commercial powder obtained by Na reduction and with powder consisting of only fine particles obtained by Ca reduction. The capacitance was larger than that of conventional powder with the same surface area, because the broccoli-like powder showed a strong resistance against shrinkage during high temperature annealing due to the framework of branches. The powder with new broccoli-like morphology can circumvent the conventional treatments for grain size control and gas removal

  16. Split-Hopkinson pressure bar tests on pure tantalum

    International Nuclear Information System (INIS)

    Dick, Richard D.; Armstrong, Ronald W.; Williams, John D.

    1998-01-01

    Pure tantalum (Ta) was loaded in compression by a split-Hopkinson pressure bar (SHPB) to strain rates from 450 to 6350 s -1 . The results are compared with SHPB data for commercial Ta and with predictions from the constitutive model for Ta developed by Zerilli and Armstrong (Z-A). The main conclusions are: (1) the flow stress versus log strain rate agree with the Z-A constitutive model and other reported data, (2) uniform strain exponents computed on a true stress-strain basis for pure Ta are somewhat greater than those determined from SHPB data for commercial Ta, and (3) in both cases the uniform strain exponents versus log strain rate are in good agreement with predictions from the Z-A constitutive model for strain rates above 1500 s -1 without a clear indication of dislocation generation

  17. Cast and hipped gamma titanium aluminum alloys modified by chromium, boron, and tantalum

    International Nuclear Information System (INIS)

    Huang, Shyhchin.

    1993-01-01

    A cast body is described of a chromium, boron, and tantalum modified titanium aluminum alloy, said alloy consisting essentially of titanium, aluminum, chromium, boron, and tantalum in the following approximate atomic ratio: Ti-Al 45-50 Cr 1-3 Ta 1-8 B 0.1-0.3 , and said alloy having been prepared by casting the alloy to form said cast body and by HIPping said body

  18. Potentiometric determination of the tungsten content of tantalum-tungsten alloys with chromium II

    International Nuclear Information System (INIS)

    Gavra, Z.; Ronen, S.; Levin, R.

    1977-05-01

    A method was developed for the potentiometric determination of the tungsten content of tantalum-tungsten alloys of different compositions. These were dissolved under conditions that enabled the tungsten content to be determined with chromium (II). Phosphoric acid was selected as a suitable complexing agent for the prevention of the precipitation of tungsten and tantalum compounds. The use of chromium (II) required an oxygen-tight system and therefore the work was carried out in suitable vessels for storage and tritation

  19. Micro/Nano Structural Tantalum Coating for Enhanced Osteogenic Differentiation of Human Bone Marrow Stem Cells

    OpenAIRE

    Ding Ding; Youtao Xie; Kai Li; Liping Huang; Xuebin Zheng

    2018-01-01

    Recently, tantalum has been attracting much attention for its anticorrosion resistance and biocompatibility, and it has been widely used in surface modification for implant applications. To improve its osteogenic differentiation of human bone marrow stem cells (hBMSCs), a micro/nano structure has been fabricated on the tantalum coating surface through the combination of anodic oxidation and plasma spraying method. The morphology, composition, and microstructure of the modified coating were co...

  20. Electron tunneling in tantalum surface layers on niobium

    International Nuclear Information System (INIS)

    Ruggiero, S.T.; Track, E.K.; Prober, D.E.; Arnold, G.B.; DeWeert, M.J.

    1986-01-01

    We have performed electron tunneling measurements on tantalum surface layers on niobium. The tunnel junctions comprise 2000-A-circle Nb base electrodes with 10--100-A-circle in situ--deposited Ta overlayers, an oxide barrier, and Ag, Pb, or Pb-Bi alloy counterelectrodes. The base electrodes were prepared by ion-beam sputter deposition. The characteristics of these junctions have been studied as a function of Ta-layer thickness. These include the critical current, bound-state energy, phonon structure, and oxide barrier shape. We have compared our results for the product I/sub c/R versus tantalum-layer thickness with an extended version of the Gallagher theory which accounts for both the finite mean free path in the Ta overlayers and suppression of the I/sub c/R product due to strong-coupling effects. Excellent fits to the data yield a value of the intrinsic scattering probability for electrons at the Ta/Nb interface of r 2 = 0.01. This is consistent with the value expected from simple scattering off the potential step created by the difference between the Fermi energies of Ta and Nb. We have found a universal empirical correlation in average barrier height phi-bar and width s in the form phi-bar = 6 eV/(s-10 A-circle) for measured junctions which holds both for our data and results for available data in the literature for oxide-barrier junctions. The latter are composed of a wide variety of base and counterelectrode materials. These results are discussed in the general context of oxide growth and compared with results for artificial tunnel barriers

  1. Micro/Nano Structural Tantalum Coating for Enhanced Osteogenic Differentiation of Human Bone Marrow Stem Cells.

    Science.gov (United States)

    Ding, Ding; Xie, Youtao; Li, Kai; Huang, Liping; Zheng, Xuebin

    2018-04-03

    Recently, tantalum has been attracting much attention for its anticorrosion resistance and biocompatibility, and it has been widely used in surface modification for implant applications. To improve its osteogenic differentiation of human bone marrow stem cells (hBMSCs), a micro/nano structure has been fabricated on the tantalum coating surface through the combination of anodic oxidation and plasma spraying method. The morphology, composition, and microstructure of the modified coating were comprehensively studied by employing scanning electron microscopy (SEM), X-ray diffraction (XRD) as well as transmission electron microscopy (TEM). The effects of hierarchical structures as well as micro-porous structure of tantalum coating on the behavior for human bone marrow stem cells (hBMSCs) were evaluated and compared at both cellular and molecular levels in vitro. The experimental results show that a hierarchical micro/nano structure with Ta₂O₅ nanotubes spread onto a micro-scale tantalum coating has been fabricated successfully, which is confirmed to promote cell adhesion and spreading. Besides, the hierarchical micro/nano tantalum coating can provide 1.5~2.1 times improvement in gene expression, compared with the micro-porous tantalum coating. It demonstrates that it can effectively enhance the proliferation and differentiation of hBMSCs in vitro.

  2. Micro/Nano Structural Tantalum Coating for Enhanced Osteogenic Differentiation of Human Bone Marrow Stem Cells

    Directory of Open Access Journals (Sweden)

    Ding Ding

    2018-04-01

    Full Text Available Recently, tantalum has been attracting much attention for its anticorrosion resistance and biocompatibility, and it has been widely used in surface modification for implant applications. To improve its osteogenic differentiation of human bone marrow stem cells (hBMSCs, a micro/nano structure has been fabricated on the tantalum coating surface through the combination of anodic oxidation and plasma spraying method. The morphology, composition, and microstructure of the modified coating were comprehensively studied by employing scanning electron microscopy (SEM, X-ray diffraction (XRD as well as transmission electron microscopy (TEM. The effects of hierarchical structures as well as micro-porous structure of tantalum coating on the behavior for human bone marrow stem cells (hBMSCs were evaluated and compared at both cellular and molecular levels in vitro. The experimental results show that a hierarchical micro/nano structure with Ta2O5 nanotubes spread onto a micro-scale tantalum coating has been fabricated successfully, which is confirmed to promote cell adhesion and spreading. Besides, the hierarchical micro/nano tantalum coating can provide 1.5~2.1 times improvement in gene expression, compared with the micro-porous tantalum coating. It demonstrates that it can effectively enhance the proliferation and differentiation of hBMSCs in vitro.

  3. Effect of sputtering parameters and substrate composition on the structure of tantalum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hallmann, Lubica, E-mail: lubica.hallmann@zzm.uzh.c [Clinic of Fixed and Removable Prosthodontics and Dental Material Science, Center of Dental Medicine, University of Zürich (Switzerland); Ulmer, Peter [Institute of Geochemistry and Petrology, ETH Zürich (Switzerland)

    2013-10-01

    The crystallographic properties of tantalum films deposited as a bioactive coating on Co–Cr–Mo and Ti–Al–Nb alloys have been investigated. The desired tough and ductile alpha phase of tantalum has been obtained by DC magnetron sputtering on Co–Cr–Mo and Ti–Al–Nb substrates. The thickness of the tantalum layer was between 20 and 600 nm. The crystallographic structure of tantalum thin film was dependent on the sputtering parameters such as DC power, bias voltage and gas impurities. Oxygen is an important factor for the stabilization of the tantalum alpha phase on Co–Cr–Mo substrate. The crystallographic structure and texture of tantalum thin films was found to be additionally dependent on the substrate composition. For Ti–Al–Nb substrate, oxygen content was not an important factor for the stabilization of the alpha phase. The observed shift of X-ray diffraction peaks to lower 2(θ) is an indication of stress evolving during the sputtering process and was dependent on bias voltage and oxygen content of the carrier gas.

  4. The evaluation of hydroxyapatite (HA) coated and uncoated porous tantalum for biomedical material applications

    International Nuclear Information System (INIS)

    Safuan, Nadia; Sukmana, Irza; Kadir, Mohammed Rafiq Abdul; Noviana, Deni

    2014-01-01

    Porous tantalum has been used as an orthopedic implant for bone defects as it has a good corrosion resistance and fatigue behaviour properties. However, there are some reports on the rejection of porous Ta after the implantation. Those clinical cases refer to the less bioactivity of metallic-based materials. This study aims to evaluate hydroxyapatite coated and uncoated porous Tantalum in order to improve the biocompatibility of porous tantalum implant and osseointegration. Porous tantalum was used as metallic-base substrate and hydroxyapatite coating has been done using plasma-spraying technique. Scanning Electron Microscopy (SEM) and Field Emission Scanning Electron Microscopy (FESEM) techniques were utilizes to investigate the coating characteristics while Confocal Raman Microscopy to investigate the interface and image. The effect of coating to the corrosion behaviour was assessed by employing potentiodynamic polarization tests in simulated body fluid at 37±1 °C. Based on SEM and FESEM results, the morphologies as well the weight element consists in the uncoated and hydroxyapatite coated porous tantalum were revealed. The results indicated that the decrease in corrosion current density for HA coated porous Ta compared to the uncoated porous Ta. This study concluded that by coating porous tantalum with HA supports to decrease the corrosion rate of pure porous.

  5. The Evaluation of Hydroxyapatite (HA) Coated and Uncoated Porous Tantalum for Biomedical Material Applications

    Science.gov (United States)

    Safuan, Nadia; Sukmana, Irza; Kadir, Mohammed Rafiq Abdul; Noviana, Deni

    2014-04-01

    Porous tantalum has been used as an orthopedic implant for bone defects as it has a good corrosion resistance and fatigue behaviour properties. However, there are some reports on the rejection of porous Ta after the implantation. Those clinical cases refer to the less bioactivity of metallic-based materials. This study aims to evaluate hydroxyapatite coated and uncoated porous Tantalum in order to improve the biocompatibility of porous tantalum implant and osseointegration. Porous tantalum was used as metallic-base substrate and hydroxyapatite coating has been done using plasma-spraying technique. Scanning Electron Microscopy (SEM) and Field Emission Scanning Electron Microscopy (FESEM) techniques were utilizes to investigate the coating characteristics while Confocal Raman Microscopy to investigate the interface and image. The effect of coating to the corrosion behaviour was assessed by employing potentiodynamic polarization tests in simulated body fluid at 37±1 °C. Based on SEM and FESEM results, the morphologies as well the weight element consists in the uncoated and hydroxyapatite coated porous tantalum were revealed. The results indicated that the decrease in corrosion current density for HA coated porous Ta compared to the uncoated porous Ta. This study concluded that by coating porous tantalum with HA supports to decrease the corrosion rate of pure porous.

  6. Cobalt phosphate-modified barium-doped tantalum nitride nanorod photoanode with 1.5% solar energy conversion efficiency

    KAUST Repository

    Li, Yanbo; Zhang, Li; Torres-Pardo, Almudena; Gonzá lez- Calbet, José Marí a Gonzá lez; Ma, Yanhang; Oleynikov, Peter; Terasaki, Osamu; Asahina, Shunsuke; Shima, Masahide; Cha, Dong Kyu; Zhao, Lan; Takanabe, Kazuhiro; Kubota, Jun; Domen, Kazunari

    2013-01-01

    conversion efficiency of 1.5%, which is more than three times higher than that of state-of-the-art single-photon photoanodes. Further, stoichiometric oxygen and hydrogen are stably produced on the photoanode and the counter electrode with Faraday efficiency

  7. Ion nitridation - physical and technological aspects

    International Nuclear Information System (INIS)

    Elbern, A.W.

    1980-01-01

    Ion nitridation, is a technique which allows the formation of a controlled thickness of nitrides in the surface of the material, using this material as the cathode in a low pressure glow discharge, which presents many advantages over the conventional method. A brief review of the ion nitriding technique, the physical fenomena involved, and we discuss technological aspects of this method, are presented. (Author) [pt

  8. Silicon nitride-fabrication, forming and properties

    International Nuclear Information System (INIS)

    Yehezkel, O.

    1983-01-01

    This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

  9. Topotactic synthesis of vanadium nitride solid foams

    International Nuclear Information System (INIS)

    Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

    1993-01-01

    Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

  10. Microhardness and microplasticity of zirconium nitride

    International Nuclear Information System (INIS)

    Neshpor, V.S.; Eron'yan, M.A.; Petrov, A.N.; Kravchik, A.E.

    1978-01-01

    To experimentally check the concentration dependence of microhardness of 4 group nitrides, microhardness of zirconium nitride compact samples was measured. The samples were obtained either by bulk saturation of zirconium iodide plates or by chemical precipitation from gas. As nitrogen content decreased within the limits of homogeneity of zirconium nitride samples where the concentration of admixed oxygen was low, the microhardness grew from 1500+-100 kg/mm 2 for ZrNsub(1.0) to 27000+-100 kg/mm 2 for ZrNsub(0.78). Microplasticity of zirconium nitride (resistance to fracture) decreased, as the concentration of nitrogen vacancies was growing

  11. Nitride alloy layer formation of duplex stainless steel using nitriding process

    Science.gov (United States)

    Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

    2018-01-01

    Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

  12. A study for an electrolytic reduction of tantalum oxide in a LiCl-Li2O molten salt

    International Nuclear Information System (INIS)

    Park, Sung Bin; Park, Byung Heung; Seo, Chung Seok; Kang, Dae Seung; Kwon, Seon Gil; Park, Seong Won

    2005-01-01

    Korea Atomic Energy Research Institute (KAERI) has developed the Advanced Spent Fuel Conditioning Process (ACP) to be an innovative technology for handling the PWR spent fuel. As part of ACP, the electrolytic reduction process (ER process) is the electrochemical reduction process of uranium oxide to uranium metal in a molten salt. The ER process has advantages in a technical stability, an economic potential and a good proliferation resistance. KAERI has reported on the good experimental results of an electrochemical reduction of the uranium oxide in a 20 kg HM/batch lab-scale. The ER process can be applicable to the reduction of other metal oxides. Metal tantalum powder has attracted attention for a variety of applications. A tantalum capacitor made from superfine and pliable tantalum powders is very small in size and it has a higher-capacitance part, therefore it is useful for microelectronic devices. By the ER process the metal tantalum can be obtained from tantalum pentoxide. In this work, a 40 g Ta 2 O 5 /batch electrochemical reactor was used for the synthesis of the metal tantalum. From the results of the cyclic voltammograms for the Ta 2 O 5 -LiCl-Li 2 O system, the mechanism of the tantalum reduction in a molten LiCl-Li 2 O salt system was investigated. Tantalum pentoxide is chemically reduced to tantalum metal by the lithium metal which is electrochemically deposited into an integrated cathode assembly in the LiCl-Li 2 O molten salt. The experiments for the tantalum reduction were performed with a chronopotentiometry in the reactor cell, the reduced products were analyzed from an analysis of the X-ray diffraction (XRD), scanning electron microscope and energy dispersive X-ray (SEM-EDX). From the results, the electrolytic reduction process is applicable to the synthesis of metal tantalum

  13. Method of preparation of uranium nitride

    Science.gov (United States)

    Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

    2013-07-09

    Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

  14. Atomic Resolution Microscopy of Nitrides in Steel

    DEFF Research Database (Denmark)

    Danielsen, Hilmar Kjartansson

    2014-01-01

    MN and CrMN type nitride precipitates in 12%Cr steels have been investigated using atomic resolution microscopy. The MN type nitrides were observed to transform into CrMN both by composition and crystallography as Cr diffuses from the matrix into the MN precipitates. Thus a change from one...

  15. Low temperature anodic bonding to silicon nitride

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Bouaidat, Salim

    2000-01-01

    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bu...

  16. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...

  17. Alloy Effects on the Gas Nitriding Process

    Science.gov (United States)

    Yang, M.; Sisson, R. D.

    2014-12-01

    Alloy elements, such as Al, Cr, V, and Mo, have been used to improve the nitriding performance of steels. In the present work, plain carbon steel AISI 1045 and alloy steel AISI 4140 were selected to compare the nitriding effects of the alloying elements in AISI 4140. Fundamental analysis is carried out by using the "Lehrer-like" diagrams (alloy specific Lehrer diagram and nitriding potential versus nitrogen concentration diagram) and the compound layer growth model to simulate the gas nitriding process. With this method, the fundamental understanding for the alloy effect based on the thermodynamics and kinetics becomes possible. This new method paves the way for the development of new alloy for nitriding.

  18. Tribological performance of polycrystalline tantalum-carbide-incorporated diamond films on silicon substrates

    Science.gov (United States)

    Ullah, Mahtab; Rana, Anwar Manzoor; Ahmed, E.; Malik, Abdul Sattar; Shah, Z. A.; Ahmad, Naseeb; Mehtab, Ujala; Raza, Rizwan

    2018-05-01

    Polycrystalline tantalum-carbide-incorporated diamond coatings have been made on unpolished side of Si (100) wafer by hot filament chemical vapor deposition process. Morphology of the coatings has been found to vary from (111) triangular-facetted to predominantly (111) square-faceted by increasing the concentration of tantalum carbide. The results have been compared to those of a diamond reference coating with no tantalum content. An increase in roughness has been observed with the increase of tantalum carbide (TaC) due to change in morphology of the diamond films. It is noticed that roughness of the coatings increases as grains become more square-faceted. It is found that diamond coatings involving tantalum carbide are not as resistant as diamond films with no TaC content and the coefficient of friction for such coatings with microcrystalline grains can be manipulated to 0·33 under high vacuum of 10-7 Torr. Such a low friction coefficient value enhances tribological behavior of unpolished Si substrates and can possibly be used in sliding applications.

  19. Clustering of transmutation elements tantalum, rhenium and osmium in tungsten in a fusion environment

    Science.gov (United States)

    You, Yu-Wei; Kong, Xiang-Shan; Wu, Xuebang; Liu, C. S.; Fang, Q. F.; Chen, J. L.; Luo, G.-N.

    2017-08-01

    The formation of transmutation solute-rich precipitates has been reported to seriously degrade the mechanical properties of tungsten in a fusion environment. However, the underlying mechanisms controlling the formation of the precipitates are still unknown. In this study, first-principles calculations are therefore performed to systemically determine the stable structures and binding energies of solute clusters in tungsten consisting of tantalum, rhenium and osmium atoms as well as irradiation-induced vacancies. These clusters are known to act as precursors for the formation of precipitates. We find that osmium can easily segregate to form clusters even in defect-free tungsten alloys, whereas extremely high tantalum and rhenium concentrations are required for the formation of clusters. Vacancies greatly facilitate the clustering of rhenium and osmium, while tantalum is an exception. The binding energies of vacancy-osmium clusters are found to be much higher than those of vacancy-tantalum and vacancy-rhenium clusters. Osmium is observed to strongly promote the formation of vacancy-rhenium clusters, while tantalum can suppress the formation of vacancy-rhenium and vacancy-osmium clusters. The local strain and electronic structure are analyzed to reveal the underlying mechanisms governing the cluster formation. Employing the law of mass action, we predict the evolution of the relative concentration of vacancy-rhenium clusters. This work presents a microscopic picture describing the nucleation and growth of solute clusters in tungsten alloys in a fusion reactor environment, and thereby explains recent experimental phenomena.

  20. Use of sulfoxides for extraction-gravimetric determination of niobium and tantalum

    International Nuclear Information System (INIS)

    Nikolaev, A.I.; Babkin, A.G.; Tkachenko, V.G.

    1977-01-01

    An extraction-gravimetrical technique has been developed for determination of niobium and tantalum. The technique permits simultaneous extraction of tantalum and its concentrating in the aqueous phase; the range of Ta concentrations determined is essentially wider than in case of the routine gravimetric methods. The technique is based upon the fact, that tantalum is extracted by sulfoxides from fluorine-sulphate solutions at lower concentration of Hf and at lower ratios between the volumes of organic and aqueous phases than niobium. Two subsequent extractions by 1M sulfoxide solutions provide for practically complete transfer of tantalum into the organic phase, whereas extraction of niobium is only 3-20%. Sufficient recovery of Ta and Nb from organic phases is provided by re-extraction by NH 4 F solution. The technique is suitable for niobium and tantalum determination at the ratios of their pentoxides from 1:100 to 100:1. The disturbing influence of Fe(3) is suppressed by reductions to Fe(2)

  1. Tantalum coating of porous carbon scaffold supplemented with autologous bone marrow stromal stem cells for bone regeneration in vitro and in vivo.

    Science.gov (United States)

    Wei, Xiaowei; Zhao, Dewei; Wang, Benjie; Wang, Wei; Kang, Kai; Xie, Hui; Liu, Baoyi; Zhang, Xiuzhi; Zhang, Jinsong; Yang, Zhenming

    2016-03-01

    Porous tantalum metal with low elastic modulus is similar to cancellous bone. Reticulated vitreous carbon (RVC) can provide three-dimensional pore structure and serves as the ideal scaffold of tantalum coating. In this study, the biocompatibility of domestic porous tantalum was first successfully tested with bone marrow stromal stem cells (BMSCs) in vitro and for bone tissue repair in vivo. We evaluated cytotoxicity of RVC scaffold and tantalum coating using BMSCs. The morphology, adhesion, and proliferation of BMSCs were observed via laser scanning confocal microscope and scanning electron microscopy. In addition, porous tantalum rods with or without autologous BMSCs were implanted on hind legs in dogs, respectively. The osteogenic potential was observed by hard tissue slice examination. At three weeks and six weeks following implantation, new osteoblasts and new bone were observed at the tantalum-host bone interface and pores. At 12 weeks postporous tantalum with autologous BMSCs implantation, regenerated trabecular equivalent to mature bone was found in the pore of tantalum rods. Our results suggested that domestic porous tantalum had excellent biocompatibility and could promote new bone formation in vivo. Meanwhile, the osteogenesis of porous tantalum associated with autologous BMSCs was more excellent than only tantalum implantation. Future clinical studies are warranted to verify the clinical efficacy of combined implantation of this domestic porous tantalum associated with autologous BMSCs implantation and compare their efficacy with conventional autologous bone grafting carrying blood vessel in patients needing bone repairing. © 2016 by the Society for Experimental Biology and Medicine.

  2. Cracking in dissimilar laser welding of tantalum to molybdenum

    Science.gov (United States)

    Zhou, Xingwen; Huang, Yongde; Hao, Kun; Chen, Yuhua

    2018-06-01

    Dissimilar joining of tantalum (Ta) to molybdenum (Mo) is of great interest in high temperature structural component applications. However, few reports were found about joining of these two hard-to-weld metals. The objective of this experimental study was to assess the weldability of laser butt joining of 0.2 mm-thick Ta and Mo. In order to study cracking mechanism in Ta/Mo joint, similar Ta/Ta and Mo/Mo joints were compared under the same welding conditions. An optical microscope observation revealed presence of intergranular cracks in the Mo/Mo joint, while both transgranular and intergranular cracks were observed in Ta/Mo joint. The cracking mechanism of the Ta/Mo joint was investigated further by micro-hardness testing, micro X-ray diffraction and scanning electron microscopy. The results showed that solidification cracking tendency of Mo is a main reason for crack initiation in the Ta/Mo joint. Low ductility feature in fusion zone most certainly played a role in the transgranular propagation of cracking.

  3. Laser-induced breakdown spectroscopy of tantalum plasma

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Sidra; Bashir, Shazia; Hayat, Asma; Khaleeq-ur-Rahman, M.; Faizan–ul-Haq [Centre for Advanced Studies in Physics, GC University, Lahore (Pakistan)

    2013-07-15

    Laser Induced Breakdown spectroscopy (LIBS) of Tantalum (Ta) plasma has been investigated. For this purpose Q-switched Nd: YAG laser pulses (λ∼ 1064 nm, τ∼ 10 ns) of maximum pulse energy of 100 mJ have been employed as an ablation source. Ta targets were exposed under the ambient environment of various gases of Ar, mixture (CO{sub 2}: N{sub 2}: He), O{sub 2}, N{sub 2}, and He under various filling pressure. The emission spectrum of Ta is observed by using LIBS spectrometer. The emission intensity, excitation temperature, and electron number density of Ta plasma have been evaluated as a function of pressure for various gases. Our experimental results reveal that the optical emission intensity, the electron temperature and density are strongly dependent upon the nature and pressure of ambient environment. The SEM analysis of the ablated Ta target has also been carried out to explore the effect of ambient environment on the laser induced grown structures. The growth of grain like structures in case of molecular gases and cone-formation in case of inert gases is observed. The evaluated plasma parameters by LIBS analysis such as electron temperature and the electron density are well correlated with the surface modification of laser irradiated Ta revealed by SEM analysis.

  4. Hydrocode analysis of lateral stress gauges in shocked tantalum

    International Nuclear Information System (INIS)

    Harris, E. J.; Winter, R. E.

    2007-01-01

    Experiments published by other workers, on the resistance change of manganin stress gauges embedded in a lateral orientation in tantalum targets shocked to a range of stresses, have been analysed using an adaptive mesh refinement hydrocode. It was found that for all of the four experiments the shape of the time profile of the computed lateral stress in the mounting layer closely matched the shape of the experimental lateral stress profiles. However, the calculated lateral stresses at the gauge location in the mounting layer are significantly less than the lateral stresses that would have been produced in the target if no gauge had been present. The perturbation caused by the gauge increased as the strength of the applied shock increased. When the perturbations are taken into account values of flow stress that are significantly smaller than those reported in the original research paper are derived. The work shows that the lateral gauge technique can give valuable information on strength provided high resolution simulation is used to compensate for the perturbations caused by the gauges

  5. Laser-induced breakdown spectroscopy of tantalum plasma

    International Nuclear Information System (INIS)

    Khan, Sidra; Bashir, Shazia; Hayat, Asma; Khaleeq-ur-Rahman, M.; Faizan–ul-Haq

    2013-01-01

    Laser Induced Breakdown spectroscopy (LIBS) of Tantalum (Ta) plasma has been investigated. For this purpose Q-switched Nd: YAG laser pulses (λ∼ 1064 nm, τ∼ 10 ns) of maximum pulse energy of 100 mJ have been employed as an ablation source. Ta targets were exposed under the ambient environment of various gases of Ar, mixture (CO 2 : N 2 : He), O 2 , N 2 , and He under various filling pressure. The emission spectrum of Ta is observed by using LIBS spectrometer. The emission intensity, excitation temperature, and electron number density of Ta plasma have been evaluated as a function of pressure for various gases. Our experimental results reveal that the optical emission intensity, the electron temperature and density are strongly dependent upon the nature and pressure of ambient environment. The SEM analysis of the ablated Ta target has also been carried out to explore the effect of ambient environment on the laser induced grown structures. The growth of grain like structures in case of molecular gases and cone-formation in case of inert gases is observed. The evaluated plasma parameters by LIBS analysis such as electron temperature and the electron density are well correlated with the surface modification of laser irradiated Ta revealed by SEM analysis

  6. Effect of structural transition on magnetic susceptibility of tantalum carbide

    International Nuclear Information System (INIS)

    Lipatnikov, V.N.; Gusev, A.I.; Rempel', A.A.; Shvejkin, G.P.

    1987-01-01

    Ordering of carbon atoms and vacancies in nonmetal sublattice of TaC y is investigated for the first time by methods of magnetic susceptibility and structural neutron diffraction analysis. Measurements of magnetic susceptibility were conducted on high-sensitive magnetic scales in temperature interval of 300 - 1300 K with holding at each temperature up to the establishment of constant, nonchanging in the course of time value of susceptibility x. When investigating x-hardened tantalum carbide within the interval of TaC 0.82 - TaC 0.85 compositions under the conditions of slow heating, it was observed nonrecorded earlier irreversible decrease of susceptibility at temperature of 960 - 1000 K. With further temperature increase T>T tr it was observed at first even and than uneven increase of x value at a temperature of T tr equal to 1090, 1130 and 1150 K for TaC 0.82 , TaC 0.83 and TaC 0.85 respectively. The measuring of magnetic susceptibility of the same samples at temperature decrease reveals the presence of susceptibility temperature hysteresis in the interval of 1070 - 1090, 1100 - 1130 and 1120 - 1150 for TaC 0.82 , TaC 0.83 and TaC 0.85 . Reversible susceptibility jump corresponding to the temperature hysteresis range at dependences of x(T), is connected with equilibrium structural phase transition of order-disorder

  7. Plasma arc melting of titanium-tantalum alloys

    International Nuclear Information System (INIS)

    Dunn, P.; Patterson, R.A.; Haun, R.

    1994-01-01

    Los Alamos has several applications for high temperature, oxidation and liquid-metal corrosion resistant materials. Further, materials property constraints are dictated by a requirement to maintain low density; e.g., less than the density of stainless steel. Liquid metal compatibility and density requirements have driven the research toward the Ti-Ta system with an upper bound of 60 wt% Ta-40 wt% Ti. Initial melting of these materials was performed in a small button arc melter with several hundred grams of material; however, ingot quantities were soon needed. But, refractory metal alloys whose constituents possess very dissimilar densities, melting temperatures and vapor pressures pose significant difficulty and require specialized melting practices. The Ti-Ta alloys fall into this category with the density of tantalum 16.5 g/cc and that of titanium 4.5 g/cc. Melting is further complicated by the high melting point of Ta(3020 C) and the relatively low boiling point of Ti(3287 C). Previous electron beam melting experience with these materials resulted, in extensive vaporization of the titanium and poor chemical homogeneity. Vacuum arc remelting(VAR) was considered as a melting candidate and discarded due to density and vapor pressure issues associated with electron beam. Plasma arc melting offered the ability to supply a cover gas to deal with vapor pressure issues as well as solidification control to help with macrosegregation in the melt and has successfully produced high quality ingots of the Ti-Ta alloys

  8. The dislocation-internal friction peak γ in tantalum

    International Nuclear Information System (INIS)

    Baur, J.; Benoit, W.; Schultz, H.

    1989-01-01

    Torsion-pendulum measurements were carried out on high-purity single crystal specimens of tantalum, having extremely low oxygen contents ( 2 peak, which appears close to γ is small traces of oxygen are presents. The γ 2 peak was formerly explained as a ''dislocation-enhanced Snoek peak''. The γ peak recovers at the peak temperature, whereas the γ 2 peak is more stable. On the basis of their results, and making use of earlier investigations of Rodrian and Schultz, the authors suggest that γ 2 is modified γ relaxation, related to screw-dislocation segments, stabilized by oxygen-decorated kinks. The stability of the γ 2 peak allows an accurate determination of the activation energy, found to be 1.00 +- 0.03 eV. This value is distinctly lower than the activation energy of the oxygen Snoek effect (1.10 eV) and is related here to the mechanism of ''kink-pair formation'' in screw dislocations, as the original γ peak. The numerical value is compatible with recent values derived from flow-stress measurements. The peak γ 2 shows increasing stability with increasing oxygen content. This is explained by single- and multi-decorated kinks

  9. Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

    Science.gov (United States)

    Kim, Wonjoo; Chattopadhyay, Anupam; Siemon, Anne; Linn, Eike; Waser, Rainer; Rana, Vikas

    2016-11-01

    Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced.

  10. Porous tantalum coatings prepared by vacuum plasma spraying enhance bmscs osteogenic differentiation and bone regeneration in vitro and in vivo.

    Directory of Open Access Journals (Sweden)

    Ze Tang

    Full Text Available Tantalum, as a potential metallic implant biomaterial, is attracting more and more attention because of its excellent anticorrosion and biocompatibility. However, its significantly high elastic modulus and large mechanical incompatibility with bone tissue make it unsuitable for load-bearing implants. In this study, porous tantalum coatings were first successfully fabricated on titanium substrates by vacuum plasma spraying (VPS, which would exert the excellent biocompatibility of tantalum and alleviate the elastic modulus of tantalum for bone tissue. We evaluated cytocompatibility and osteogenesis activity of the porous tantalum coatings using human bone marrow stromal cells (hBMSCs and its ability to repair rabbit femur bone defects. The morphology and actin cytoskeletons of hBMSCs were observed via electron microscopy and confocal, and the cell viability, proliferation and osteogenic differentiation potential of hBMSCs were examined quantitatively by PrestoBlue assay, Ki67 immunofluorescence assay, real-time PCR technology and ALP staining. For in vivo detection, the repaired femur were evaluated by histomorphology and double fluorescence labeling 3 months postoperation. Porous tantalum coating surfaces promoted hBMSCs adhesion, proliferation, osteogenesis activity and had better osseointegration and faster new bone formation rate than titanium coating control. Our observation suggested that the porous tantalum coatings had good biocompatibility and could enhance osseoinductivity in vitro and promote new bone formation in vivo. The porous tantalum coatings prepared by VPS is a promising strategy for bone regeneration.

  11. Superconducting properties and uniaxial strain characteristics of Nb3Sn fiber-reinforced superconductors with tantalum reinforcement fibers

    International Nuclear Information System (INIS)

    Arai, Kazuaki; Umeda, Masaichi; Agatsuma, Koh; Tateishi, Hiroshi

    1998-01-01

    We have been developing fiber-reinforced superconductors (FRS) for high-field and large-scale magnets. Tungsten fibers have been selected as the reinforcement fiber for FRS so far because tungsten has the highest elastic modulus of approximately 400 GPa which can minimize the strain from electromagnetic force. The preparation process of FRS consists of sputtering deposition and heat treatment because it may be difficult to apply drawing methods to materials of high-elastic modulus such as tungsten. Tantalum has high elastic modulus of 178 GPa and its thermal expansion coefficient that is closer to that of Nb 3 Sn than tungsten's, which means prestrain in Nb 3 Sn in FRS is reduced by adopting tantalum fibers. Tantalum has been used as barriers between bronze and copper in conventional Nb 3 Sn superconductors which are usually prepared with drawing process despite of the tantalum's high elastic modulus. That implies drawing process may be applied to prepare FRS with tantalum reinforcement fibers. In this paper, FRS using tantalum fibers prepared with sputtering process are described with making comparison with FRS of tungsten to clarify the basic properties of FRS using tantalum fibers. Depth profiles in Nb 3 Sn layer in FRS were measured to examine reaction between superconducting layers and reinforcement fibers. Superconducting properties including strain and stress characteristics were shown. Those data will contribute to design of FRS using tantalum reinforcement fibers with adopts the drawing processes. (author)

  12. The recovery of tin, and the production of niobium pentoxide and potassium tantalum fluoride, from a tin slag

    International Nuclear Information System (INIS)

    Iorio, G.; Tyler, M.S.

    1987-01-01

    This report describes the results of testwork on the recovery of tin, niobium, and tantalum from a tin slag. The slag, which consisted mainly of amorphous silica, with varying amounts of calcuim, magnesium, manganese, iron, and aluminium, contained an average of 8,8 per cent niobium pentoxide and 6,2 per cent tantalum pentoxide. The metallic tin-ion phase was removed from the crushed slag by magnetic separation. The slag was then leached with hydrochloric acid to remove magnesium, calcium, aluminium, iron, manganese, and the remainder of the tin. Leaching with sodium hydroxide for the removal of silica and phosphorous was followed by a final leach with hydrochloric acid for the removal of sodium. The upgraded concentrate thus obtained was purified by leaching with hydrofluoric acid, solvent extraction of niobium and tantalum into tri-n-butyl phosphate and methyl isobutyl ketone, and selective stripping of niobium with sulphuric acid and tantalum with ammonium floride. Niobium pentoxide and potassium tantalum fluoride were then precipitated by the addition of ammonium hydroxide and potassium fluoride to the respective strip liquors. The overall recoveries in the upgraded concentrate were 98 per cent for tantalum and 92 per cent for niobium. Dissolutions and recoveries of over 99 per cent were obtained for both tantalum and niobium in the purification steps. The niobium pentoxide and potassium tantalum fluoride precipitates obtained were of high purity

  13. Solvothermal synthesis: a new route for preparing nitrides

    CERN Document Server

    Demazeau, G; Denis, A; Largeteau, A

    2002-01-01

    Solvothermal synthesis appears to be an interesting route for preparing nitrides such as gallium nitride and aluminium nitride, using ammonia as solvent. A nitriding additive is used to perform the reaction and, in the case of gallium nitride, is encapsulated by melt gallium. The syntheses are performed in the temperature range 400-800 deg. C and in the pressure range 100-200 MPa. The synthesized powders are characterized by x-ray diffraction and scanning electron microscopy. Finely divided gallium nitride GaN and aluminium nitride AlN, both with wurtzite-type structure, can be obtained by this route.

  14. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zajtsev, A.M.

    1985-01-01

    Three optically active defects are detected in mono- and polycrystal cubic boron nitride (β-BN). Analysis of intensity of temperature dependences, halfwidth and energy shift of 1.76 eV narrow phononless line (center GC-1) makes it possible to interprete the observed cathodoluminescence spectra an optical analog of the Moessbaner effect. Comparison of the obtained results with the known data for diamond monocrystals makes it possible to suggest that the detected center GC-1 is a nitrogen vacancy . The conclusion, concerning the Moessbauer optical spectra application, is made to analyze structural perfection of β-BN crystal lattice

  15. Surface analysis in steel nitrides by using Moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Figueiredo, R.S. de.

    1991-07-01

    The formation of iron nitride layer at low temperatures, 600-700 K, by Moessbauer spectroscopy is studied. These layers were obtained basically through two different processes: ion nitriding and ammonia gas nitriding. A preliminary study about post-discharge nitriding was made using discharge in hollow cathode as well as microwave excitation. The assembly of these chambers is also described. The analysis of the nitrided samples was done by CEMS and CXMS, aided by optical microscopy, and the CEMS and CXMS detectors were constructed by ourselves. We also made a brief study about these detectors, testing as acetone as the mixture 80% He+10% C H 4 as detection gases for the use of CEMS. The surface analysis of the samples showed that in the ammonia gas process nitriding the nitrided layer starts by the superficial formation of an iron nitride rich nitrogen. By thermal evolution this nitride promotes the diffusion of nitrogen and the formation of other more stable nitrides. (author)

  16. Simple process to fabricate nitride alloy powders

    International Nuclear Information System (INIS)

    Yang, Jae Ho; Kim, Dong-Joo; Kim, Keon Sik; Rhee, Young Woo; Oh, Jang-Soo; Kim, Jong Hun; Koo, Yang Hyun

    2013-01-01

    Uranium mono-nitride (UN) is considered as a fuel material [1] for accident-tolerant fuel to compensate for the loss of fissile fuel material caused by adopting a thickened cladding such as SiC composites. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. Among them, a direct nitriding process of metal is more attractive because it has advantages in the mass production of high-purity powders and the reusing of expensive 15 N 2 gas. However, since metal uranium is usually fabricated in the form of bulk ingots, it has a drawback in the fabrication of fine powders. The Korea Atomic Energy Research Institute (KAERI) has a centrifugal atomisation technique to fabricate uranium and uranium alloy powders. In this study, a simple reaction method was tested to fabricate nitride fuel powders directly from uranium metal alloy powders. Spherical powder and flake of uranium metal alloys were fabricated using a centrifugal atomisation method. The nitride powders were obtained by thermal treating the metal particles under nitrogen containing gas. The phase and morphology evolutions of powders were investigated during the nitriding process. A phase analysis of nitride powders was also part of the present work. KAERI has developed the centrifugal rotating disk atomisation process to fabricate spherical uranium metal alloy powders which are used as advanced fuel materials for research reactors. The rotating disk atomisation system involves the tasks of melting, atomising, and collecting. A nozzle in the bottom of melting crucible introduces melt at the center of a spinning disk. The centrifugal force carries the melt to the edge of the disk and throws the melt off the edge. Size and shape of droplets can be controlled by changing the nozzle size, the disk diameter and disk speed independently or simultaneously. By adjusting the processing parameters of the centrifugal atomiser, a spherical and flake shape

  17. Microstructural Characterization of Low Temperature Gas Nitrided Martensitic Stainless Steel

    DEFF Research Database (Denmark)

    Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    2015-01-01

    The present work presents microstructural investigations of the surface zone of low temperature gas nitrided precipitation hardening martensitic stainless steel AISI 630. Grazing incidence X-ray diffraction was applied to investigate the present phases after successive removal of very thin sections...... of the sample surface. The development of epsilon nitride, expanded austenite and expanded martensite resulted from the low temperature nitriding treatments. The microstructural features, hardness and phase composition are discussed with emphasis on the influence of nitriding duration and nitriding potential....

  18. Evaluation of Ferrite Chip Beads as Surge Current Limiters in Circuits with Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2014-01-01

    Limiting resistors are currently required to be connected in series with tantalum capacitors to reduce the risk of surge current failures. However, application of limiting resistors decreases substantially the efficiency of the power supply systems. An ideal surge current limiting device should have a negligible resistance for DC currents and high resistance at frequencies corresponding to transients in tantalum capacitors. This work evaluates the possibility of using chip ferrite beads (FB) as such devices. Twelve types of small size FBs from three manufacturers were used to evaluate their robustness under soldering stresses and at high surge current spikes associated with transients in tantalum capacitors. Results show that FBs are capable to withstand current pulses that are substantially greater than the specified current limits. However, due to a sharp decrease of impedance with current, FBs do not reduce surge currents to the required level that can be achieved with regular resistors.

  19. Tantalum(V) impurity extraction by octanol from niobium(V) fluoride solutions

    International Nuclear Information System (INIS)

    Majorov, V.G.; Nikolaev, A.I.; Kopkov, V.K.

    2002-01-01

    The conditions of the niobium and tantalum extraction separation by octanol in the fluoride solutions, depending on the metals and free hydrofluoric acid concentration as well as on the organic and water phases voluminous relation, are studied for the purpose of developing the technology of niobium deep purification from the tantalum impurities. The technological scheme of the niobium solutions(V) extraction purification from the tantalum impurities(V), which provides for obtaining the niobium oxide(V), containing less than 0.005 mass % Ta 2 O 5 , is proposed on the basis of the established optimal separation conditions. The possibility of using the developed technology by the pyrochlore reprocessing is indicated [ru

  20. An exploration in mineral supply chain mapping using tantalum as an example

    Science.gov (United States)

    Soto-Viruet, Yadira; Menzie, W. David; Papp, John F.; Yager, Thomas R.

    2013-01-01

    This report uses the supply chain of tantalum (Ta) to investigate the complexity of mineral and metal supply chains in general and show how they can be mapped. A supply chain is made up of all the manufacturers, suppliers, information networks, and so forth, that provide the materials and parts that go into making up a final product. The mineral portion of the supply chain begins with mineral material in the ground (the ore deposit); extends through a series of processes that include mining, beneficiation, processing (smelting and refining), semimanufacture, and manufacture; and continues through transformation of the mineral ore into concentrates, refined mineral commodities, intermediate forms (such as metals and alloys), component parts, and, finally, complex products. This study analyses the supply chain of tantalum beginning with minerals in the ground to many of the final goods that contain tantalum.

  1. Tantalum and niobium carbides obtention by carbothermic reduction of columbotantalite ores

    International Nuclear Information System (INIS)

    Gordo, E.; Garcia-Carcedo, F.; Torralba, J.M.

    1998-01-01

    Tantalum and niobium carbides are characterized by its high hardness and chemical corrosion resistance. Both carbides, but mainly TaC, are used in hard metals (sintered carbides), together with their carbides, to manufacture cutting tools and dies in special machining applications involving mechanical shock at high temperature. Its use as reinforcement of wear resistant materials through powder metallurgy techniques are being investigated. However, the use of TaC is usually limited because of its high cost. Therefore tantalum carbide with niobium content, which is cheaper, is used. In this work the obtention of complex tantalum and niobium carbides from a Spanish columbotantalite ore is studied through relatively cheap and simple process as it is carbothermic reduction. Concentration of the ore, its reduction and the characterization of products are described. (Author) 11 refs

  2. Assembly of tantalum porous films with graded oxidation profile from size-selected nanoparticles

    Science.gov (United States)

    Singh, Vidyadhar; Grammatikopoulos, Panagiotis; Cassidy, Cathal; Benelmekki, Maria; Bohra, Murtaza; Hawash, Zafer; Baughman, Kenneth W.; Sowwan, Mukhles

    2014-05-01

    Functionally graded materials offer a way to improve the physical and chemical properties of thin films and coatings for different applications in the nanotechnology and biomedical fields. In this work, design and assembly of nanoporous tantalum films with a graded oxidation profile perpendicular to the substrate surface are reported. These nanoporous films are composed of size-selected, amorphous tantalum nanoparticles, deposited using a gas-aggregated magnetron sputtering system, and oxidized after coalescence, as samples evolve from mono- to multi-layered structures. Molecular dynamics computer simulations shed light on atomistic mechanisms of nanoparticle coalescence, which govern the films porosity. Aberration-corrected (S) TEM, GIXRD, AFM, SEM, and XPS were employed to study the morphology, phase and oxidation profiles of the tantalum nanoparticles, and the resultant films.

  3. Recovery of metal values and hydrofluoric acid from tantalum and columbium waste sludge

    International Nuclear Information System (INIS)

    Bielecki, E.; Romberger, K.; Bakke, B.; Hobin, M.A.; Clark, C.

    1992-01-01

    A metallurgical processing system for economically recovering metal values, such as columbium, tantalum, thorium, and uranium from dilute source solids, such as digestion sludges, by a series of steps including: (1) slurrying the source solids with dilute hydrofluoric acid to produce a solid phase and a liquid phase containing dissolved tantalum and columbium, then extracting tantalum and/or columbium from the liquid phase by means of a liquid ion-exchange process and then, additionally; (2) roasting the solid phase with sulfuric acid to recover and recycle hydrofluoric acid, leaching the roasted solids with dilute sulfuric acid to produce a disposable solid phase and a liquid phase containing thorium and uranium, and extracting thorium and uranium from the liquid phase by means of a liquid-liquid amine extraction process

  4. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    Science.gov (United States)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  5. Tantalum-based multilayer coating on cobalt alloys in total hip and knee replacement

    Energy Technology Data Exchange (ETDEWEB)

    Balagna, C., E-mail: cristina.balagna@polito.it [Institute of Materials Engineering and Physics, Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24,10129 Torino (Italy); Faga, M.G. [Istituto di Scienza e Tecnologia dei Materiali Ceramici, Consiglio Nazionale delle Ricerche, Strada delle Cacce 73, 10135 Torino (Italy); Spriano, S. [Institute of Materials Engineering and Physics, Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24,10129 Torino (Italy)

    2012-05-01

    Cobalt-chromium-molybdenum (CoCrMo) alloys are widely used in total hip and knee joint replacement, due to high mechanical properties and resistance to wear and corrosion. They are able to form efficient artificial joints by means of coupling metal-on-polymer or metal-on-metal contacts. However, a high concentration of stress and direct friction between surfaces leads to the formation of polyethylene wear debris and the release of toxic metal ions into the human body, limiting, as a consequence, the lifetime of implants. The aim of this research is a surface modification of CoCrMo alloys in order to improve their biocompatibility and to decrease the release of metal ions and polyethylene debris. Thermal treatment in molten salts was the process employed for the deposition of tantalum-enriched coating. Tantalum and its compounds are considered biocompatible materials with low ion release and high corrosion resistance. Three different CoCrMo alloys were processed as substrates. An adherent coating of about 1 {mu}m of thickness, with a multilayer structure consisting of two tantalum carbides and metallic tantalum was deposited. The substrates and modified layers were characterized by means of structural, chemical and morphological analysis. Moreover nanoindentation, scratch and tribological tests were carried out in order to evaluate the mechanical behavior of the substrates and coating. The hardness of the coated samples increases more than double than the untreated alloys meanwhile the presence of the coating reduced the wear volume and rate of about one order of magnitude. - Highlights: Black-Right-Pointing-Pointer Thermal treatment in molten salts deposits a Ta-based coating on Co-based alloys. Black-Right-Pointing-Pointer Coating is composed by one or two tantalum carbides and/or metallic tantalum. Black-Right-Pointing-Pointer The coating structure depends on thermal temperature and substrates carbon content. Black-Right-Pointing-Pointer Coating is able to

  6. New Routes to Lanthanide and Actinide Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Butt, D.P.; Jaques, B.J.; Osterberg, D.D. [Boise State University, 1910 University Dr., Boise, Idaho 83725-2075 (United States); Marx, B.M. [Concurrent Technologies Corporation, Johnstown, PA (United States); Callahan, P.G. [Carnegie Mellon University, Pittsburgh, PA (United States); Hamdy, A.S. [Central Metallurgical R and D Institute, Helwan, Cairo (Egypt)

    2009-06-15

    The future of nuclear energy in the U.S. and its expansion worldwide depends greatly on our ability to reduce the levels of high level waste to minimal levels, while maintaining proliferation resistance. Implicit in the so-called advanced fuel cycle is the need for higher levels of fuel burn-up and consequential use of complex nuclear fuels comprised of fissile materials such as Pu, Am, Np, and Cm. Advanced nitride fuels comprised ternary and quaternary mixtures of uranium and these actinides have been considered for applications in advanced power plants, but there remain many processing challenges as well as necessary qualification testing. In this presentation, the advantages and disadvantages of nitride fuels are discussed. Methods of synthesizing the raw materials and sintering of fuels are described including a discussion of novel, low cost routes to nitrides that have the potential for reducing the cost and footprint of a fuel processing plant. Phase pure nitrides were synthesized via four primary methods; reactive milling metal flakes in nitrogen at room temperature, directly nitriding metal flakes in a pure nitrogen atmosphere, hydriding metal flakes prior to nitridation, and carbo-thermically reducing the metal oxide and carbon mixture prior to nitridation. In the present study, the sintering of UN, DyN, and their solid solutions (U{sub x}, Dy{sub 1-x}) (x = 1 to 0.7) were also studied. (authors)

  7. Cation mobility in H+/Na+ ion exchange products of acid tantalum and zirconium phosphates

    International Nuclear Information System (INIS)

    Tarnopol'skij, V.A.; Yaroslavtsev, A.B.

    2000-01-01

    Ionic conductivity of Na + /H + exchange products on acid zirconium phosphate with different substitution degree and on acid tantalum phosphate, where ion exchange occurs via formation of a continuous series of solid solutions, was studied by the method of conductometry. It was ascertained that ionic conductivity decreases monotonously with growth in substitution degree of H + for Na + in acid tantalum phosphate. Anomalous increase in ionic conductivity of ion exchange products on acid zirconium phosphate with a low substitution degree has been detected for the first time. Formation of a double electric layer with a high concentration of cationic defects on the interface surface is the reason for increase in ionic conductivity [ru

  8. Partial molar volumes of hydrogen and deuterium in niobium, vanadium, and tantalum

    International Nuclear Information System (INIS)

    Peterson, D.T.; Herro, H.M.

    1983-01-01

    The partial molar volumes of hydrogen and deuterium were measured in vanadium, niobium, and tantalum by a differential pressure technique. One-half of an electrolytically charged sample plat was compressed between hardened steel blocks in a hydraulic press. The activity of hydrogen in the hig pressure region was raised and caused hydrogen to diffuse into the low pressure region. The partia molar volume was calculated from the ratio of the hydrogen concentrations in the high and low pressure regions of the sample. Small isotope effects were found in the partial molar volume. Hydrogen had the larger volume in niobium and tantalum, but the reverse was true in vanadium

  9. A preliminary deposit model for lithium-cesium-tantalum (LCT) pegmatites

    Science.gov (United States)

    Bradley, Dwight; McCauley, Andrew

    2013-01-01

    This report is part of an effort by the U.S. Geological Survey to update existing mineral deposit models and to develop new ones. We emphasize practical aspects of pegmatite geology that might directly or indirectly help in exploration for lithium-cesium-tantalum (LCT) pegmatites, or for assessing regions for pegmatite-related mineral resource potential. These deposits are an important link in the world’s supply chain of rare and strategic elements, accounting for about one-third of world lithium production, most of the tantalum, and all of the cesium.

  10. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    International Nuclear Information System (INIS)

    Ndiege, Nicholas; Subramanian, Vaidyanathan; Shannon, Mark A.; Masel, Richard I.

    2008-01-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 μm using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC 2 H 5 ) 5 ) vapor on the deposition surface

  11. Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

    NARCIS (Netherlands)

    Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

    2002-01-01

    Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

  12. Analytical fingerprint for tantalum ores from African deposits

    Science.gov (United States)

    Melcher, F.; Graupner, T.; Sitnikova, M.; Oberthür, T.; Henjes-Kunst, F.; Gäbler, E.; Rantitsch, G.

    2009-04-01

    Illegal mining of gold, diamonds, copper, cobalt and, in the last decade, "coltan" has fuelled ongoing armed conflicts and civil war in a number of African countries. Following the United Nations initiative to fingerprint the origin of conflict materials and to develop a traceability system, our working group is investigating "coltan" (i.e. columbite-tantalite) mineralization especially in Africa, also within the wider framework of establishing certified trading chains (CTC). Special attention is directed towards samples from the main Ta-Nb-Sn provinces in Africa: DR Congo, Rwanda, Mozambique, Ethiopia, Egypt and Namibia. The following factors are taken into consideration in a methodological approach capable of distinguishing the origin of tantalum ores and concentrates with the utmost probability: (1) Quality and composition of coltan concentrates vary considerably. (2) Mineralogical and chemical compositions of Ta-Nb ores are extremely complex due to the wide range of the columbite-tantalite solid solution series and its ability to incorporate many additional elements. (3) Coltan concentrates may contain a number of other tantalum-bearing minerals besides columbite-tantalite. In our approach, coltan concentrates are analyzed in a step-by-step mode. State-of-the-art analytical tools employed are automated scanning electron microscopy (Mineral Liberation Analysis; MLA), electron microprobe analysis (major and trace elements), laser ablation-ICP-MS (trace elements, isotopes), and TIMS (U-Pb dating). Mineral assemblages in the ore concentrates, major and trace element concentration patterns, and zoning characteristics in the different pegmatites from Africa distinctly differ from each other. Chondrite-normalized REE distribution patterns vary significantly between columbite, tantalite, and microlite, and also relative to major element compositions of columbites. Some locations are characterized by low REE concentrations, others are highly enriched. Samples with

  13. Residual Stress Induced by Nitriding and Nitrocarburizing

    DEFF Research Database (Denmark)

    Somers, Marcel A.J.

    2005-01-01

    The present chapter is devoted to the various mechanisms involved in the buildup and relief of residual stress in nitrided and nitrocarburized cases. The work presented is an overview of model studies on iron and iron-based alloys. Subdivision is made between the compound (or white) layer......, developing at the surfce and consisting of iron-based (carbo)nitrides, and the diffusion zone underneath, consisting of iron and alloying element nitrides dispersed in af ferritic matrix. Microstructural features are related directly to the origins of stress buildup and stres relief....

  14. Optimum deposition, structure, and properties of tantalum oxide films

    International Nuclear Information System (INIS)

    Lin, Y.C.

    1985-01-01

    Amorphous, ductile, and uniform Ta 2 O 5 films that acted as diffusion barriers were developed by sputter depositing Ta metal on Al single crystals (99.99%) and subsequently anodizing these thin films. The morphology, microstructure, composition and properties were characterized by scanning and transmission electron microscopy, surface and Fourier transform infrared spectroscopy, X-ray diffraction, and fluorescence. Superior corrosion resistance in a water saturated Cl 2 atmosphere was provided by Ta 2 O 5 coating on Al single crystal substrates but not on Al alloys. The strong Ta-O bond, the non-porous nature of the film and good adhesion to the substrate are attributed to the outstanding corrosion resistance of these oxide coatings. Al alloy surfaces are not protected, since the anodic film formed over grain boundaries, processing lines and emergent precipitates is poorly adherent, thus providing loci for corrosion. These problems were eliminated by casting a 400 A layer of tantalum oxyhydroxide polymer from ethanol solution onto Al substrate and curing to a Ta 2 O 5 layer that effectively resisted attack by wet Cl 2 . The mechanical properties of Ta 2 O 5 films on Al alloys were studied at various pH's by in-situ fatigue loading coupled with electrochemical measurements of corrosion potential and corrosion current. These results indicate the fatigue resistance of this oxide film effectively protects the underlying metal from strong HCl solution attack. The very unusual ductility and high corrosion resistance of Ta 2 O 5 films could be related to the graphite-like structure that exists in the amorphous state of this oxide

  15. Biological Response of Human Bone Marrow-Derived Mesenchymal Stem Cells to Commercial Tantalum Coatings with Microscale and Nanoscale Surface Topographies

    Science.gov (United States)

    Skoog, Shelby A.; Kumar, Girish; Goering, Peter L.; Williams, Brian; Stiglich, Jack; Narayan, Roger J.

    2016-06-01

    Tantalum is a promising orthopaedic implant coating material due to its robust mechanical properties, corrosion resistance, and excellent biocompatibility. Previous studies have demonstrated improved biocompatibility and tissue integration of surface-treated tantalum coatings compared to untreated tantalum. Surface modification of tantalum coatings with biologically inspired microscale and nanoscale features may be used to evoke optimal tissue responses. The goal of this study was to evaluate commercial tantalum coatings with nanoscale, sub-microscale, and microscale surface topographies for orthopaedic and dental applications using human bone marrow-derived mesenchymal stem cells (hBMSCs). Tantalum coatings with different microscale and nanoscale surface topographies were fabricated using a diffusion process or chemical vapor deposition. Biological evaluation of the tantalum coatings using hBMSCs showed that tantalum coatings promote cellular adhesion and growth. Furthermore, hBMSC adhesion to the tantalum coatings was dependent on surface feature characteristics, with enhanced cell adhesion on sub-micrometer- and micrometer-sized surface topographies compared to hybrid nano-/microstructures. Nanostructured and microstructured tantalum coatings should be further evaluated to optimize the surface coating features to promote osteogenesis and enhance osseointegration of tantalum-based orthopaedic implants.

  16. Surface modification of titanium by plasma nitriding

    Directory of Open Access Journals (Sweden)

    Kapczinski Myriam Pereira

    2003-01-01

    Full Text Available A systematic investigation was undertaken on commercially pure titanium submitted to plasma nitriding. Thirteen different sets of operational parameters (nitriding time, sample temperature and plasma atmosphere were used. Surface analyses were performed using X-ray diffraction, nuclear reaction and scanning electron microscopy. Wear tests were done with stainless steel Gracey scaler, sonic apparatus and pin-on-disc machine. The obtained results indicate that the tribological performance can be improved for samples treated with the following conditions: nitriding time of 3 h; plasma atmosphere consisting of 80%N2+20%H2 or 20%N2+80%H2; sample temperature during nitriding of 600 or 800 degreesC.

  17. Thermodynamics, kinetics and process control of nitriding

    DEFF Research Database (Denmark)

    Mittemeijer, Eric J.; Somers, Marcel A. J.

    1999-01-01

    As a prerequisite for predictability of properties obtained by a nitriding treatment of iron-based workpieces, the relation between the process parameters and the composition and structure of the surface layer produced must be known. At present (even) the description of thermodynamic equilibrium...... of pure iron-nitrogen phases has not been achieved fully. It has been shown that taking into account ordering of nitrogen in the epsilon and gamma' iron-nitride phases, leads to an improved understanding of the Fe-N phase diagram. Although thermodynamics indicate the state the system strives for......, the nitriding result is determined largely by the kinetics of the process. The nitriding kinetics have been shown to be characterised by the occurring local near-equilibria and stationary states at surfaces and interfaces, and the diffusion coefficient of nitrogen in the various phases, for which new data have...

  18. Comparison of the mechanical properties between tantalum and nickel-titanium foams implant materials for bone ingrowth applications

    International Nuclear Information System (INIS)

    Sevilla, P.; Aparicio, C.; Planell, J.A.; Gil, F.J.

    2007-01-01

    Metallic porous materials are designed to allow the ingrowth of living tissue inside the pores and to improve the mechanical anchorage of the implant. In the present work, tantalum and nickel-titanium porous materials have been characterized. The tantalum foams were produced by vapour chemical deposition (CVD/CVI) and the NiTi foams by self-propagating high temperature synthesis (SHS). The former exhibited an open porosity ranging between 65 and 73% and for the latter it ranged between 63 and 68%. The pore sizes were between 370 and 440 μm for tantalum and between 350 and 370 μm for nickel-titanium. The Young's modulus in compression of the foams studied, especially for tantalum, were very similar to those of cancellous bone. This similitude may be relevant in order to minimize the stress shielding effect in the load transfer from the implant to bone. The strength values for NiTi foam are higher than for tantalum, especially of the strain to fracture which is about 23% for NiTi and only 8% for tantalum. The fatigue endurance limit set at 10 8 cycles is about 7.5 MPa for NiTi and 13.2 MPa for tantalum. The failure mechanisms have been studied by scanning electron microscopy

  19. Compressive creep of silicon nitride

    International Nuclear Information System (INIS)

    Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

    1990-01-01

    Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

  20. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zaitsev, A.M.

    1985-01-01

    Three types of optically active defect were observed in single-crystal and polycrystalline cubic boron nitride (β-BN). An analysis of the temperature dependences of the intensity, half-width, and energy shift of a narrow zero-phonon line at 1.76 eV (GC-1 center) made it possible to interpret the observed cathodoluminescence spectra as an optical analog of the Moessbauer effect. A comparison of the results obtained in the present study with the available data on diamond single crystals made it possible to identify the observed GC-1 center as a nitrogen vacancy. It was concluded that optical Moessbauer-type spectra can be used to analyze structure defects in the crystal lattice of β-BN

  1. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  2. Electrochemical Solution Growth of Magnetic Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-10-01

    Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

  3. Nitride fuels irradiation performance data base

    International Nuclear Information System (INIS)

    Brozak, D.E.; Thomas, J.K.; Peddicord, K.L.

    1987-01-01

    An irradiation performance data base for nitride fuels has been developed from an extensive literature search and review that emphasized uranium nitride, but also included performance data for mixed nitrides [(U,Pu)N] and carbonitrides [(U,Pu)C,N] to increase the quantity and depth of pin data available. This work represents a very extensive effort to systematically collect and organize irradiation data for nitride-based fuels. The data base has many potential applications. First, it can facilitate parametric studies of nitride-based fuels to be performed using a wide range of pin designs and operating conditions. This should aid in the identification of important parameters and design requirements for multimegawatt and SP-100 fuel systems. Secondly, the data base can be used to evaluate fuel performance models. For detailed studies, it can serve as a guide to selecting a small group of pin specimens for extensive characterization. Finally, the data base will serve as an easily accessible and expandable source of irradiation performance information for nitride fuels

  4. Electrochemical Properties of Transparent Conducting Films of Tantalum-Doped Titanium Dioxide

    Czech Academy of Sciences Publication Activity Database

    Krýsová, Hana; Mazzolini, P.; Casari, C. S.; Russo, V.; Li Bassi, A.; Kavan, Ladislav

    2017-01-01

    Roč. 232, APR 2017 (2017), s. 44-53 ISSN 0013-4686 R&D Projects: GA ČR GA13-07724S Institutional support: RVO:61388955 Keywords : titanium dioxide * tantalum doping * electrochemistry Subject RIV: CG - Electrochemistry OBOR OECD: Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) Impact factor: 4.798, year: 2016

  5. Activation analysis of trace amounts of rare earth in high purity tantalum

    International Nuclear Information System (INIS)

    Ishibashi, Wataru; Saito, Shinichi; Hirayama, Tooru.

    1975-01-01

    It is necessary to separate rare earth from tantalum by rapid methods in order to remove effects of a strong radioactivity and a short half-life. Tantalum is extracted with 10%N-lauryl (trialkylmethyl) amino-benzene pre-equilibrated with a solution of 9 M hydrochloric and 0.15 M hydrofluoric acid. A non-radioactive rare earth element is added to this aqueous solution, a precipitate of trace amounts of radioactive rare earth in aqueous solution is formed by this addition of rare earth. Some factors in the determination are: 1) the effect of the irradiation position of the sample in the atomic reactor, 2) the effect on the extraction with 10%N-lauryl (trialkylmethyl) amino-benzene for the radioactive rare earth, 3) the effect of the concentration of hydrofluoric acid, ammonia water and nitric acid on co-precipitation. As a result of the investigation we obtained the following satisfactory results: 1) Rare earth was not effected by the extraction of tantalum with 10%N-lauryl (trialkylmethyl) amino-benzene. 2) The recovery of rare earth by co-precipitation increases when an ammonium ion coexists, and when the concentration of hydrofluoric acid decreases, but the recovery decreases with the increase of nitric acid concentration. 3) The time required for the extraction is 9 hours. In case of determination for dysprosium, tantalum extracted with 10%N-lauryl (trialkylmethyl) amino-benzene before activation and the time for separation is 2 hours. (auth.)

  6. Synthesis of a Bis(thiophenolate)pyridine Ligand and Its Titanium, Zirconium, and Tantalum Complexes

    KAUST Repository

    Lenton, Taylor N.; VanderVelde, David G.; Bercaw, John E.

    2012-01-01

    -membered chelate with longer metal-sulfur and carbon-sulfur bonds. Solid-state structures of tantalum complexes (SNS)Ta(NMe 2) 3 (5) and (SNS)TaCl(NEt 2) 2 (6) also display pronounced C 2 twisting of the SNS ligand. 1D and 2D NMR experiments show that 5

  7. Electrosynthesis of tantalum borides in oxygen-free and oxygen-containing fluoride melts

    DEFF Research Database (Denmark)

    Polyakova, L.P.; Polyakov, E.G.; Makarova, O.V.

    2001-01-01

    Results of electrosynthesis of tantalum borides in fluoride and oxyfluoride melts are compared. It is shown that the single-phase X-ray-amorphous micro-layered coatings form only in the latter case. Linear and square-wave voltammetry, complemented by X-ray diffraction analysis, IR spectroscopy...

  8. Morphology, proliferation, and osteogenic differentiation of mesenchymal stem cells cultured on titanium, tantalum, and chromium surfaces

    DEFF Research Database (Denmark)

    Stiehler, Maik; Lind, M.; Mygind, Tina

    2007-01-01

    the interactions between human mesenchymal stem cells (MSCs) and smooth surfaces of titanium (Ti), tantalum (Ta), and chromium (Cr). Mean cellular area was quantified using fluorescence microscopy (4 h). Cellular proliferation was assessed by (3)H-thymidine incorporation and methylene blue cell counting assays (4...

  9. Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Denny, Yus Rama [Department of Physics Education, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Firmansyah, Teguh [Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Yang, Dong-Seok [Department of Physics Education, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 16678 (Korea, Republic of)

    2016-10-15

    Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

  10. Oxidation and Volatilization from Tantalum Alloy T-222 During Air Exposure

    Energy Technology Data Exchange (ETDEWEB)

    Smolik, Galen Richard; Petti, David Andrew; Sharpe, John Phillip; Schuetz, Stanley Thomas

    2000-10-01

    Tantalum alloys are one of the refractory metals with renewed consideration for high temperatures in fusion reactor applications. Tantalum alloys perform well in protective environments but oxidized readily in gases containing higher oxygen levels. In addition, the radioactive isotope Ta-182 would be produced in tantalum and could be a significant contributor to dose if mobilized. Other isotopes of importance are produced from tungsten and hafnium. Mobilization of activated products during an accident with air ingress is therefore a safety issue. In this study, we measured the extent of oxidation and mobilization from tantalum alloy T-222 oxidized in flowing air between 500 and 1200°C. This alloy nominally contains 10 wt% tungsten, 2.5 wt% hafnium and 0.01 wt% carbon. We found that the mobilization of Ta and Hf was closely linked to the occurrence of oxide spalling. These elements showed no migration from the test chamber. Some W was mobilized by volatilization as evidenced by transport from the chamber. Tungsten volatilization could occur primarily during initial stages of oxidation before an oxide scale forms and impedes the process. The mobilization of Ta and W are presented in terms of the mass flux (g/m 2 -h) as a function of test temperature. These measurements along with specific designs, activation calculations, and accident scenarios provide information useful for dose calculations of future fusion devices

  11. Oxidation and Volatilization from Tantalum Alloy T-222 During Air Exposure

    Energy Technology Data Exchange (ETDEWEB)

    Smolik, G.R.; Petti, D.A.; Sharpe, J.P.; Schuetz, S.T.

    2000-10-31

    Tantalum alloys are one of the refractory metals with renewed consideration for high temperatures in fusion reactor applications. Tantalum alloys perform well in protective environments but oxidized readily in gases containing higher oxygen levels. In addition, the radioactive isotope Ta-182 would be produced in tantalum and could be a significant contributor to dose if mobilized. Other isotopes of importance are produced from tungsten and hafnium. Mobilization of activated products during an accident with air ingress is therefore a safety issue. In this study, we measured the extent of oxidation and mobilization from tantalum alloy T-222 oxidized in flowing air between 500 and 1200 C. This alloy nominally contains 10 wt% tungsten, 2.5 wt% hafnium and 0.01 wt% carbon. We found that the mobilization of Ta and Hf was closely linked to the occurrence of oxide spalling. These elements showed no migration from the test chamber. Some W was mobilized by volatilization as evidenced by transport from the chamber. Tungsten volatilization could occur primarily during initial stages of oxidation before an oxide scale forms and impedes the process. The mobilization of Ta and W are presented in terms of the mass flux (g/m 2 -h) as a function of test temperature. These measurements along with specific designs, activation calculations, and accident scenarios provide information useful for dose calculations of future fusion devices.

  12. Contact Resistance of Tantalum Coatings in Fuel Cells and Electrolyzers using Acidic Electrolytes at Elevated Temperatures

    DEFF Research Database (Denmark)

    Jensen, Annemette Hindhede; Christensen, Erik; Barner, Jens H. Von

    2014-01-01

    stainless steel were found to be far below the US Department of Energy target value of 10mcm2. The good contact resistance of tantalum was demonstrated by simulating high temperature polymer electrolyte membrane electrolysis conditions by anodization performed in 85% phosphoric acid at 130◦C, followed...

  13. Synthesis and magnetic properties of highly dispersed tantalum carbide nanoparticles decorated on carbon spheres

    CSIR Research Space (South Africa)

    Bhattacharjee, K

    2016-01-01

    Full Text Available The decoration of carbon spheres (CS) by highly dispersed tantalum carbide nanoparticles (TaC NPs) was achieved, for the first time by a unique carbothermal reduction method at 1350 °C for 30 min under reduced oxygen partial pressure. TaC NPs...

  14. The effects of argon ion bombardment on the corrosion resistance of tantalum

    Science.gov (United States)

    Ramezani, A. H.; Sari, A. H.; Shokouhy, A.

    2017-02-01

    Application of ion beam has been widely used as a surface modification method to improve surface properties. This paper investigates the effect of argon ion implantation on surface structure as well as resistance against tantalum corrosion. In this experiment, argon ions with energy of 30 keV and in doses of 1 × 1017-10 × 1017 ions/cm2 were used. The surface bombardment with inert gases mainly produces modified topography and morphology of the surface. Atomic Force Microscopy was also used to patterned the roughness variations prior to and after the implantation phase. Additionally, the corrosion investigation apparatus wear was applied to compare resistance against tantalum corrosion both before and after ion implantation. The results show that argon ion implantation has a substantial impact on increasing resistance against tantalum corrosion. After the corrosion test, scanning electron microscopy (SEM) analyzed the samples' surface morphologies. In addition, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. The purpose of this paper was to obtain the perfect condition for the formation of tantalum corrosion resistance. In order to evaluate the effect of the ion implantation on the corrosion behavior, potentiodynamic tests were performed. The results show that the corrosion resistance of the samples strongly depends on the implantation doses.

  15. Formation of oxide layers on aluminum, niobium, and tantalum in molten alkali metal carbonates

    Science.gov (United States)

    Nikitina, E. V.; Kazakovtseva, N. A.

    2013-08-01

    The electrochemical synthesis of niobium, tantalum, and aluminum oxide nanolayers is studied in the melt of lithium, sodium, and potassium carbonates with various additives to a salt phase in an oxidizing atmosphere at a temperature of 773 and 873 K. A scheme is proposed for high-temperature anion local activation of the process.

  16. Synthesis of Monodispersed Tantalum(V) oxide Nanospheres by an Ethylene Glycol Mediated Route

    Science.gov (United States)

    Tantalum(V) oxide (Ta2O5) nanospheres have been synthesized by a very simple ethylene glycol mediated route. The two-step process involves the formation of glycolate nanoparticles and their subsequent hydrolysis and calcination to generate the final Ta2O5 nanospheres. The synthes...

  17. The development of fast tantalum foil targets for short-lived isotopes

    CERN Document Server

    Bennett, J R J; Drumm, P V; Ravn, H L

    2003-01-01

    The development of fast tantalum foil targets for short-lived isotopes was discussed. It was found that the effusion was faster but the diffusion out of the foils was a limiting factor. The performance of the targets at ISOLDE with beams of **1**1Li, **1**2Be and **1**4Be was also analyzed. (Edited abstract) 13 Refs.

  18. Swelling and tensile properties of EBR-II-irradiated tantalum alloys for space reactor applications

    International Nuclear Information System (INIS)

    Grossbeck, M.L.; Wiffen, F.W.

    1985-01-01

    The tantalum alloys T-111, ASTAR-811C, Ta-10 W, and unalloyed tantalum were examined following EBR-II irradiation to a fluence of 1.7 x 10 26 neutrons/m 2 (E > 0.1 MeV) at temperatures from 650 to 950 K. Swelling was found to be negligible for all alloys; only tantalum was found to exhibit swelling, 0.36%. Tensile testing revealed that irradiated T-111 and Ta-10 W are susceptible to plastic instability, but ASTAR-811C and tantalum were not. The tensile properties of ASTAR-811C appeared adequate for current SP-100 space nuclear reactor designs. Irradiated, oxygen-doped T-111 exhibited no plastic deformation, and the abrupt failure was intergranular in nature. The absence of plastic instability in ASTAR-811C is encouraging for alloys containing carbide precipitates. These fine precipitates might prevent dislocation channeling, which leads to plastic instability in many bcc metals after irradiation. 10 refs., 13 figs., 8 tabs

  19. Technological challenges in extractive metallurgy and refining of niobium, tantalum and preparation of their alloys

    International Nuclear Information System (INIS)

    Mirji, K.V.; Sheela; Saibaba, N.

    2016-01-01

    Manufacturing of refractory and reactive metals, their alloys and fabricated products has been always difficult due to their high affinity with atmospheric gases, stringent specifications and exhaustive quality requirements. In the field of development of these materials, Nuclear Fuel Complex (NFC), Hyderabad has been at the fore front in accepting the challenges for the advancement of technological growth. Extensive developments have been carried out during the last few decades in the field of niobium, tantalum, zirconium etc in the form of pure metal, their compounds and alloys. Over the period of time, efforts have been made for developing sophisticated facilities along with trained man power for manufacturing of critical items for which technical knowhow is not available either with private industries or any other organizations in the country. In the field of reactive metals, though general theory is well established, production is intriguing and requires expert handling on the field. At NFC, efforts were put towards industrial adoptability of the useful knowledge gained from lab scale to reliable production scale. Comprehensive study was conducted to systematically study the effects of various process parameters starting from ore to the metals and their alloys, equipment were modified for ease of operation with stress on recycling/reusing of the waste and handling of effluents. However scale of operation and therefore cost of production has been matter of concern in the field of tantalum and niobium. Electron beam refining is used for production of highly pure reactive and refractory metals like tantalum, niobium, zirconium etc. and their alloys under high vacuum. Special Materials Plant (SMP) at Nuclear Fuel Complex, Hyderabad has developed processes for production of niobium oxide, tantalum oxide, tantalum metal powder, tantalum anodes/capacitors, potassium tantalum fluoride, Nb thermit, Nb metal granules, RRR grade niobium, Nb base alloys such as Zr

  20. Tin(2) difluoride and antimony(3) trifluoride as fluorine donors in reactions with tantalum halides in various solvents

    International Nuclear Information System (INIS)

    Kokunov, Yu.V.; Ershova, M.M.; Razgonyaeva, G.A.; Buslaev, Yu.A.

    2001-01-01

    The reactions of SnF 2 , SbF 3 with TaF 5 and TaCl 5 in acetonitrile and dimethylsulfoxide were studied by means of 19 F and 119 Sn NMR. SnF 2 and SbF 3 were established to be donors of fluorine ions for the tantalum(5). It was found that the anion and cation tantalum fluorochloride complexes were formed in acetonitrile, and [TaF 6 ] - was dominated in dimethylsulfoxide. In the solution the tin(2) is present as fluorine-containing polymer cations. Dimethylsulfoxide, as distinct from acetonitrile, leads to disproportionation of tantalum fluorochlorides [ru

  1. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2011-01-01

    The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

  2. Nucleation of iron nitrides during gaseous nitriding of iron; the effect of a preoxidation treatment

    DEFF Research Database (Denmark)

    Friehling, Peter B.; Poulsen, Finn Willy; Somers, Marcel A.J.

    2001-01-01

    grains. On prolonged nitriding, immediate nucleation at the surface of iron grains becomes possible. Calculated incubation times for the nucleation of gamma'-Fe4N1-x during nitriding are generally longer than those observed experimentally in the present work. The incubation time is reduced dramatically...

  3. Microstructural characterization of an AISI-SAE 4140 steel without nitridation and nitrided

    International Nuclear Information System (INIS)

    Medina F, A.; Naquid G, C.

    2000-01-01

    It was micro structurally characterized an AISI-SAE 4140 steel before and after of nitridation through the nitridation process by plasma post-unloading microwaves through Optical microscopy (OM), Scanning electron microscopy (SEM) by means of secondary electrons and retrodispersed, X-ray diffraction (XRD), Energy dispersion spectra (EDS) and mapping of elements. (Author)

  4. [Short-term curative effects of Tantalum rod treatment in early avascular necrosis].

    Science.gov (United States)

    Ye, Fu-Sheng; Ni, Zhe-Ji; Chu, Xiao-Bing; He, Bang-Jian; Li, Ju; Tong, Pei-Jian

    2013-08-01

    To explore the recent clinical curative effect of Tantalum rod in treating the early avascular necrosis. From January 2008 to November 2008, the 25 patients (39 hips) with early avascular necrosis accepted tantalum rod placement and included 9 males (11 hips) and 16 females (28 hips) with an average age of 37 years old ranging from 18 to 74 years old. Four patients (6 hips) caused by Alcoholic, 6 patients (8 hips) by hormone, 2 cases (2 hips) by traumatic, 13 cases (23 hips) by idiopathic. Steinberg preoperative stage involved 7 hips in period I, 24 hips in period II, 8 hips in period III. Curative effect analysis included preoperative and postoperative Harris score, radiographic changes and hip replacement for follow-up to accept the end of the femoral head survival rate. All patients were followed up for 6 to 47 months (averaged 37.4 months). All 12 hips imaging appeard progress,including tantalum rod exit in 1 hip, hip hemiarthroplasty collapse in 3 hips, the area increased to avascular necrosis in 8 hips. Six hips accepted total hip replacement, including imaging progress in 5 hips (41.7%, 5/12), no imaging progress in 1 hip (3.7%,1/27). All hips' Kaplan-Meier survival curves showed 6-month survival rate was (97.4 +/- 2.5)% after tantalum stick insertion, 1-year survival rate was (94.7 +/- 3.6), and 2-year survival rate was (88.6 +/- 5.4)%, 3-year survival rate was (72.5 +/- 11.2). It is effective for treatment of avascular necrosis of femoral head in Steinberg I and II by Tantalum rod, and it can effectively relieve femoral head replacement time.

  5. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    DEFF Research Database (Denmark)

    Guler, Urcan; Suslov, Sergey; Kildishev, Alexander V.

    2015-01-01

    Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average ...

  6. Preparing microspheres of actinide nitrides from carbon containing oxide sols

    International Nuclear Information System (INIS)

    Triggiani, L.V.

    1975-01-01

    A process is given for preparing uranium nitride, uranium oxynitride, and uranium carboxynitride microspheres and the microspheres as compositions of matter. The microspheres are prepared from carbide sols by reduction and nitriding steps. (Official Gazette)

  7. Poisoning Experiments Aimed at Discriminating Active and Less-Active Sites of Silica-Supported Tantalum Hydride for Alkane Metathesis

    KAUST Repository

    Saggio, Guillaume

    2010-10-04

    Only 50% of the silica-supported tantalum hydride sites are active in the metathesis of propane. Indeed, more than 45% of the tantalum hydride can be eliminated by a selective oxygen poisoning of inactive sites with no significant decrease in the global turnover. Conversely, cyclopentane induces no such selective poisoning. Hence, the active tantalum hydride sites that show greater resistance to oxygen poisoning correspond to the νTa-H bands of higher wavenumbers, particularly that at 1860cm-1. These active tantalum hydride sites should correspond to tris- or monohydride species relatively far from silica surface oxygen atoms. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarization

    Science.gov (United States)

    Levesque, A.; Bouteville, A.; de Baynast, H.; Laveissière, B.

    2002-06-01

    antalum coatings are elaborated on titanium substrates through Low Pressure Chemical Vapor Deposition from tantalum pentachloride-hydrogen gaseous phase at a deposition temperature of 800 °C and a total pressure of 3.3 mbar. The aim of this paper is to evaluate the effectiveness of this tantalum coating in corrosive solution. Optical Microscopy and Scanning Electron Microscopy observations reveal that deposits are of 1.7 μm in thickness and conformal. The corrosion resistance of tantalum coated titanium substrates is quantified through standard potentiodynamic polarization method. Even for tantalum coatings exhibiting some defects as pores, the corrosion current density is as low as 0.25 mA/cm^2.in very agressive solutions like kroll reagent (HN03/HF).

  9. Analysis of cobalt, tantalum, titanium, vanadium and chromium in tungsten carbide by inductively coupled plasma-optical emission spectrometry

    CSIR Research Space (South Africa)

    Archer, M

    2003-12-01

    Full Text Available Inductively coupled plasma optical emission spectroscopy (ICP-OES) was used to measure the concentrations of cobalt, tantalum, titanium, vanadium and chromium in solutions of tungsten carbide. The main advantage of the method described here lies...

  10. Advancing liquid metal reactor technology with nitride fuels

    International Nuclear Information System (INIS)

    Lyon, W.F.; Baker, R.B.; Leggett, R.D.; Matthews, R.B.

    1991-08-01

    A review of the use of nitride fuels in liquid metal fast reactors is presented. Past studies indicate that both uranium nitride and uranium/plutonium nitride possess characteristics that may offer enhanced performance, particularly in the area of passive safety. To further quantify these effects, the analysis of a mixed-nitride fuel system utilizing the geometry and power level of the US Advanced Liquid Metal Reactor as a reference is described. 18 refs., 2 figs., 2 tabs

  11. Plasma nitridation optimization for sub-15 A gate dielectrics

    NARCIS (Netherlands)

    Cubaynes, F.N; Schmitz, Jurriaan; van der Marel, C.; Snijders, J.H.M.; Veloso, A.; Rothschild, A.; Olsen, C.; Date, L.

    The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using

  12. Ion nitriding in 316=L stainless steel

    International Nuclear Information System (INIS)

    Rojas-Calderon, E.L.

    1989-01-01

    Ion nitriding is a glow discharge process that is used to induce surface modification in metals. It has been applied to 316-L austenitic stainless steel looking for similar benefits already obtained in other steels. An austenitic stainless steel was selected because is not hardenable by heat treatment and is not easy to nitride by gas nitriding. The samples were plastically deformed to 10, 20, 40, 50 AND 70% of their original thickness in order to obtain bulk hardening and to observe nitrogen penetration dependence on it. The results were: an increase of one to two rockwell hardness number (except in 70% deformed sample because of its thickness); an increase of even several hundreds per cent in microhardness knoop number in nitrided surface. The later surely modifies waste resistance which would be worth to quantify in further studies. Microhardness measured in an internal transversal face to nitrided surface had a gradual diminish in its value with depth. Auger microanalysis showed a higher relative concentration rate C N /C F e near the surface giving evidence of nitrogen presence till 250 microns deep. The color metallography etchant used, produced faster corrosion in nitrited regions. Therefore, corrosion studies have to be done before using ion nitrited 316-L under these chemicals. (Author)

  13. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  14. Indium gallium nitride/gallium nitride quantum wells grown on polar and nonpolar gallium nitride substrates

    Science.gov (United States)

    Lai, Kun-Yu

    Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical calculations indicated that the spontaneous emission rate in a single In0.15Ga0.85N/GaN QW could be improved by ˜2.2 times if the polarization-induced internal field was avoided by epitaxial deposition on nonpolar substrates. A challenge for nonpolar GaN is the limited size (less than 10x10 mm2) of substrates, which was addressed by expansion during the regrowth by Hydride Vapor Phase Epitaxy (HVPE). Subsurface damage in GaN substrates were reduced by annealing with NH3 and N2 at 950°C for 60 minutes. It was additionally found that the variation of m-plane QWs' emission properties was significantly increased when the substrate miscut toward a-axis was increased from 0° to 0.1°. InGaN/GaN QWs were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on c-plane and m-plane GaN substrates. The QWs were studied by cathodoluminescence spectroscopy with different incident electron beam probe currents (0.1 nA ˜ 1000 nA). Lower emission intensities and longer peak wavelengths from c-plane QWs were attributed to the Quantum-confined Stark Effect (QCSE). The emission intensity ratios of m-plane QWs to c-plane QWs decreased from 3.04 at 1 nA to 1.53 at 1000 nA. This was identified as the stronger screening effects of QCSE at higher current densities in c-plane QWs. To further investigate these effects in a fabricated structure, biased photoluminescence measurements were performed on m-plane InGaN/GaN QWs. The purpose was to detect the possible internal fields induced by the dot-like structure in the InGaN layer through the response of these internal fields under externally applied fields. No energy shifts of the QWs were observed, which was attributed to strong surface leakage currents.

  15. Thermodynamics, kinetics and process control of nitriding

    DEFF Research Database (Denmark)

    Mittemeijer, Eric J.; Somers, Marcel A. J.

    1997-01-01

    As a prerequisite for the predictability of properties obtained by a nitriding treatment of iron based workpieces, the relation between the process parameters and the composition and structure of the surface layer produced must be known. At present, even the description of thermodynamic equilibrium...... of pure Fe-N phases has not been fully achieved. It is shown that taking into account the ordering of nitrogen in the epsilon and gamma' iron nitride phases leads to an improved understanding of the Fe-N phase diagram. Although consideration of thermodynamics indicates the state the system strives for...... for process control of gaseous nitriding by monitoring the partial pressure of oxygen in the furnace using a solid state electrolyte is provided. At the time the work was carried out the authors were in the Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft...

  16. Establishment of an analytical procedure for the determination of niobium and tantalum in minerals containing these elements using X-ray fluorescence technique

    International Nuclear Information System (INIS)

    Nguyen Xuan Chien

    2003-01-01

    The study of determination of niobium, tantalum in mineral and tin slags using X-ray fluorescence spectrometry was carried out. Analytical samples of powder and pellet were prepared. the interference of the major accompanied elements in sample with the determination of niobium and tantalum was also studied. The analysis of niobium and tantalum in mineral and in tin slags samples was given in this work. (author)

  17. Molecular dynamics studies of actinide nitrides

    International Nuclear Information System (INIS)

    Kurosaki, Ken; Uno, Masayoshi; Yamanaka, Shinsuke; Minato, Kazuo

    2004-01-01

    The molecular dynamics (MD) calculation was performed for actinide nitrides (UN, NpN, and PuN) in the temperature range from 300 to 2800 K to evaluate the physical properties viz., the lattice parameter, thermal expansion coefficient, compressibility, and heat capacity. The Morse-type potential function added to the Busing-Ida type potential was employed for the ionic interactions. The interatomic potential parameters were determined by fitting to the experimental data of the lattice parameter. The usefulness and applicability of the MD method to evaluate the physical properties of actinide nitrides were studied. (author)

  18. Local heating with titanium nitride nanoparticles

    DEFF Research Database (Denmark)

    Guler, Urcan; Ndukaife, Justus C.; Naik, Gururaj V.

    2013-01-01

    We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible.......We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible....

  19. Tantalum X-ray contrast media, by M.G. Zuev and L.P. Larionov (Ekaterinburg: UrO RAN, 2002. 155 p.)

    International Nuclear Information System (INIS)

    Zhuravleva, E.Yu.

    2004-01-01

    The monograph of M.G. Zuev and L.P. Larionov Tantalum X-ray contrast media (Solid state chemistry for medicine series) is discussed. The monograph includes information on physical and chemical properties of tantalum, rare earths, and their oxides, phase compositions and phase diagrams of M 2 O 3 -Ta 2 O 5 (M - rare earths) systems is performed. Data on preclinical tests of yttrium orthotantalate and lanthanum orthotantalate as X-ray contrast media are given. Procedures for the production of X-ray contrast media involving tantalum oxide, rare earth tantalate and tantalum powder are described [ru

  20. Niobium, tantalum and titanium extraction from natural and technogenic raw materials of the Kola Peninsula by liquid-liquid extraction methods

    International Nuclear Information System (INIS)

    Kassikova, N.I.; Kassikov, A.G.; Balabanov, Yu.I.; Petrov, V.B.; Kalinnikov, V.T.

    2003-01-01

    Such rare metals as niobium and tantalum are important strategic materials underlying many of the modern advanced technologies. Since the extraction and processing of rare metal concentrates from own deposits has diminished abruptly in recent years, it is essential to look into the possibility of extracting these elements from various production wastes. This work discusses liquid-liquid extraction and purification of niobium, tantalum and titanium from process solutions of loparite, perovskite and sphene concentrate decomposition with sulphuric and hydrochloric acids; niobium from lithium niobate production wastes decomposed by hydrochloric acid; and tantalum from tantalum capacitor and heat-resistant alloy wastes. (Original)

  1. Effect of tantalum on α-martensite crystal structure in Co-Ta alloy

    International Nuclear Information System (INIS)

    Skorodzievskij, V.S.; Ustinov, A.I.; Chuistov, K.V.

    1985-01-01

    Changes in the crystal structure of α-martensite, formed during Co-Ta alloy hardening from the region of a homogeneous solid solution, are investigated by X-ray analysis methods. In case of increasing tantalum content in the alloy, intensity redistribution of X-ray scattering along the direction of the reverse space of H-K not equal to 3N (N=0, +-1, +-2...) type is fixed, which appears, depending on concentration, in continuous displacement of maxima from positions being characteristic for the initial 2H structure, as well as in occurring additional maxima and in changing the ratio between them by ipteΣity. For limiting values of tantalum concentration, where β → α-transformations are still observed, the number of intepsity maxima and their positions an the period of α-martensite reverse lattice recurrence period is closer to the location of 15R 1 -structure reverse structure unit

  2. Antibacterial properties and cytocompatibility of tantalum oxide coatings with different silver content

    International Nuclear Information System (INIS)

    Huang, Heng-Li; Chang, Yin-Yu; Chen, Hung-Jui; Chou, Yu-Kai; Lai, Chih-Ho; Chen, Michael Y. C.

    2014-01-01

    Tantalum (Ta) oxides and their coatings have been proved to increase their applications in the biomedical fields by improving osseointegration and wear resistance. In this study, Ta oxide coatings containing different proportions of Ag are deposited on SS304 materials. A twin-gun magnetron sputtering system is used to deposit the tantalum oxide-Ag coating. In this study, Staphylococcus aureus, which exhibits physiological commensalism on the human skin, nares, and mucosal and oral areas, is chosen as the model for in vitro antibacterial analyses via a fluorescence staining method using Syto9. The cytocompatibility and adhesive morphology of human skin fibroblast cells (CCD-966SK) on the coatings are also determined by using the microculture tetrazolium assay. This study shows that Ta 2 O 5 and Ta 2 O 5 -Ag coatings with 12.5 at. % of Ag exhibit improved antibacterial effects against S. aureus and have good skin fibroblast cell cellular biocompatibility

  3. Determination of tantalum in standard steels by INAA and absorption spectrophotometry

    Energy Technology Data Exchange (ETDEWEB)

    Obrusnik, I; Posta, S [Ustav Jaderneho Vyzkumu, Rez (Czechoslovakia)

    1978-02-14

    Two analytical methods, instrumental neutron activation analysis (INAA) and absorption spectrophotometry with malachite green, have been used for the determination of tantalum in standard steels produced by the Research Institute of CKD Prague - steels No. 167 and No. 169 with expected concentrations of Ta 0.01% and 0.03%, respectively. INAA method consisted of irradiation of steel samples (chips) in a nuclear reactor and Ge(Li) ..gamma..-ray spectrometry after a cooling period of one month. A spectrophotometric determination is based on the extraction of ionic associate of TaF/sub 6//sup -/ with malachite green into Oenzene from a solution of diluted sulphuric acid and hydrofluoric acid. The results obtained by the two methods are in a good agreement. However, INAA method is more sensitive and precise then spectrophotometry for the determination of tantalum in steels in the above-mentioned concentration ranges.

  4. Determination of tantalum in standard steels by INAA and absorption spectrophotometry

    International Nuclear Information System (INIS)

    Obrusnik, I.; Posta, S.

    1978-01-01

    Two analytical methods, instrumental neutron activation analysis (INAA) and absorption spectrophotometry with malachite green, have been used for the determination of tantalum in standard steels produced by the Research Institute of CKD Prague - steels No. 167 and No. 169 with expected concentrations of Ta 0.01% and 0.03%, respectively. INAA method consisted of irradiation of steel samples (chips) in a nuclear reactor and Ge(Li) γ-ray spectrometry after a cooling period of one month. A spectrophotometric determination is based on the extraction of ionic associate of TaF 6 - with malachite green into Oenzene from a solution of diluted sulphuric acid and hydrofluoric acid. The results obtained by the two methods are in a good agreement. However, INAA method is more sensitive and precise then spectrophotometry for the determination of tantalum in steels in the above-mentioned concentration ranges. (author)

  5. Characterization of anodic barrier films on tantalum and 1100 aluminum by ISS/SIMS

    International Nuclear Information System (INIS)

    McCune, R.C.

    1978-01-01

    Ion scattering spectrometry (ISS) and concurrent secondary ion mass spectrometry (SIMS) were used to determine the depth profiles of anodic barrier oxide films grown on tantalum and type 1100 aluminum. The sputter rate in each case was determined from the film thickness measured by the anodic overvoltage, and the penetration time determined by the decrease in intensity of the metal oxide fragment observed using SIMS. A mixture of helium and neon ions was used to sputter aluminum oxide films in order to observe ion scattering of helium by oxygen, while taking advantage of the higher sputtering rate available with neon. A comparison of sputter rates for helium and neon on tantalum oxide indicated that neon sputtered the film at a rate eight times that of helium. SIMS depth profiling of the residual boron in the anodic aluminum oxide indicated a mixing effect which did not permit adequate resolution of the interface between the oxide film and the underlying metal

  6. Tantalum-containing Z-phase in 12%Cr martensitic steels

    DEFF Research Database (Denmark)

    Danielsen, Hilmar Kjartansson; Hald, John

    2009-01-01

    Z-phases in tantalum-containing 12%Cr steels have been investigated. In 12%Cr steel without any Nb or V, the formation of CrTaN Z-phases was observed. In 12%Cr steel which also contained V, the Ta entered Z-phase as a minor element, Cr(V,Ta)N. The crystal structure of Cr(V,Ta)N seems to be identi......Z-phases in tantalum-containing 12%Cr steels have been investigated. In 12%Cr steel without any Nb or V, the formation of CrTaN Z-phases was observed. In 12%Cr steel which also contained V, the Ta entered Z-phase as a minor element, Cr(V,Ta)N. The crystal structure of Cr(V,Ta)N seems...

  7. Synthesis, Consolidation and Characterization of Sol-gel Derived Tantalum-Tungsten Oxide Thermite Composites

    Energy Technology Data Exchange (ETDEWEB)

    Cervantes, O [Univ. of California, Davis, CA (United States)

    2010-06-01

    Energetic composite powders consisting of sol-gel (SG) derived nanostructured tungsten oxide were produced with various amounts of micrometer-scale tantalum fuel metal. Such energetic composite powders were ignition-tested and results show that the powders are not sensitive to friction, spark and/or impact ignition. Initial consolidation experiments, using the High Pressure Spark Plasma Sintering (HPSPS) technique, on the SG derived nanostructured tungsten oxide produced samples with higher relative density than can be achieved with commercially available tungsten oxide. The SG derived nanostructured tungsten oxide with immobilized tantalum fuel metal (Ta - WO3) energetic composite was consolidated to a density of 9.17 g·cm-3 or 93% relative density. In addition, those samples were consolidated without significant pre-reaction of the constituents, thus retaining their stored chemical energy.

  8. Optical properties of nitride nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Cantarero, A.; Cros, A.; Garro, N.; Gomez-Gomez, M.I.; Garcia, A.; Lima, M.M. de [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Daudin, B. [Departement de Recherche Fondamentale sur la Matiere Condensee, SPMM, CEA/Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Rizzi, A.; Denker, C.; Malindretos, J. [IV. Physikalisches Institut, Georg August Universitaet Goettingen, 37073 Goettingen (Germany)

    2011-01-15

    In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or the spacer on the relaxation of the QDs. A theoretical model, based on continuous elastic theory, were developed to interpret the Raman scattering results. On the other hand, InN NCs have been grown by MBE in the vapor-liquid-solid mode using Au as a catalyst. The nanocolumns have different morphology depending on the growth conditions. The optical properties can be correlated to the morphology of the samples and the best growth conditions can be selected. We observe, from the analysis of the Raman data in InN NCs, the existence of two space regions contributing to the scattering: the surface and the inner region. From the inner region, uncoupled phonon modes are clearly observed, showing the high crystal quality and the complete relaxation of the NCs (no strain). The observation of a LO-phonon-plasmon couple in the same spectra is a fingerprint of the accumulation layer predicted at the surface of the nanocolumns. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Boron nitride nanotubes for spintronics.

    Science.gov (United States)

    Dhungana, Kamal B; Pati, Ranjit

    2014-09-22

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  10. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  11. Metal halide-phosphorus halide-alkyl halide complexes: reaction with niobium and tantalum pentachlorides

    International Nuclear Information System (INIS)

    Puri, D.M.; Saini, M.S.

    1978-01-01

    The reactions of niobium and tantalum pentachlorides with trichlorophosphine and phenyldichlorophosphine have been studied in presence of alkylating agents such as sec-butyl chloride, iso-butyl chloride, tert-butyl chloride, tert-anylchloride, cyclohexyl chloride and triphenylmethyl chloride. Solid products have been isolated and characterised by vibrational spectroscopy as ionic complexes of alkyl- and/or aryl-phosphonium cations with hexachloroniobate and hexachlorotantalate anions. (author)

  12. On-line separation of refractory hafnium and tantalum isotopes at the ISOCELE separator

    CERN Document Server

    Liang, C F; Obert, J; Paris, P; Putaux, J C

    1981-01-01

    By chemical evaporation technique, neutron deficient hafnium nuclei have been on-line separated at the ISOCELE facility, from the isobar rare-earth elements, in the metal-fluoride HfF/sub 3//sup +/ ion form. Half-lives of /sup 162-165/Hf have been measured. Similarly, tantalum has been selectively separated on the TaF/sub 4//sup +/ form. (4 refs) .

  13. Influence of strain-rate on the flow stress and ductility of copper and tantalum

    International Nuclear Information System (INIS)

    Regazzoni, G.; Montheillet, F.; Dormeval, R.; Stelly, M.

    1981-09-01

    Tensile experiments were carried out at strain-rates in a range from epsilon = 6.10 -5 to 3.10 3 s -1 at 293 K and 673 K or 773 K. Two types of copper (FCC) and pure tantalum (BCC) were tested. The variations of ductility have been investigated in relation with the σ - epsilon equations of the materials and the examinations of fracture surfaces. They can be explained in terms of stability and intrinsic ductility

  14. Hydrogen in niobium, tantalum, and vanadium: Structures, phase diagrams, and morphologies

    International Nuclear Information System (INIS)

    Schober, T.

    1978-07-01

    The paper discusses basic aspects of the reactions between the metals niobium, tantalum, vanadium, and hydrogen or deuterium. After an introduction to problems of preparation experimental technqiues for the investigation of hydrides are presented. The possible hydride structures are discussed. With vanadium, there are great differences between the structures of hydrides and deuterides. Detailed mention is also made of recent measurements of the NGH, TaH, VH, and VD phase diagrams. (orig./WBU) [de

  15. Estimation of niobium, tantalum and zirconium in a carbonate rich ore

    International Nuclear Information System (INIS)

    Navale, A.S.; Venkatakrishnan, R.R.; Sreenivas, T.

    2013-01-01

    A simple method using ICP-OES for estimation of tantalum, niobium and zirconium in a carbonate rich matrix is described. The sample is boiled with 10% v/v hydrochloric acid for 15 min and filtered. The residue is fused with ammonium bifluoride-ammonium sulphate flux and the melt is leached with water. Nb, Ta and Zr are estimated in the water leach by ICP-OES. (author)

  16. Upgrading tantalum and niobium oxides content in Bangka tin slag with double leaching

    Science.gov (United States)

    Soedarsono, J. W.; Permana, S.; Hutauruk, J. K.; Adhyputra, R.; Rustandi, A.; Maksum, A.; Widana, K. S.; Trinopiawan, K.; Anggraini, M.

    2018-03-01

    Tantalum has become one of the 14 types of critical materials where the level of its availability is assumed as the midterm critical metal. Benefits of the element tantalum in the electronics field increased the deficit balance of supply / demand, as more variations of electronic products developed. The tantalum experts calculated the level of availability until 2020. Base on the previous studies, tin slag is a secondary source of tantalum and niobium. This study uses tin slag from Bangka, Indonesia, abbreviated, Bangka Tin Slag (BTS). BTS was roasted, water quenched and sieved, abbreviated BTS-RQS.BTS was roasted, water quenched and sieved, abbreviated BTS-RQS.BTS-RQS was roasted at a temperature 700□C given sample code BTS-R700QS, while roasted at 800°C given sample code BTS-R800QS.A variable leaching experiment on BTS-R700QS was solvent concentration variable and on BTS-R800QS was time variable. The entire residue was characterized by X-Ray Fluorescence (XRF), and the optimum results are on the BTS-R800QS leaching into 5 M NaOH for 20 min followed by 5M HCl for 50 min, with content of Ta2O5 and Nb2O51.56% and 1.11%, respectively. The result of XRF measurement showed was the increasing of TNO content due to the increasing solvent concentration and time of acid leaching. The discussion of thermodynamics this study used was HSC Chemistry 6 as a supporting data.

  17. A polycrystalline model for stress-strain behaviour of tantalum at 300 K

    International Nuclear Information System (INIS)

    Frenois, S.; Munier, E.; Pilvin, P.

    2001-01-01

    A polycrystalline model is proposed to model the large plastic deformation and texture evolutions in tantalum over a wide range of strain rates at room temperature. The mechanical behaviour is discussed in terms of back and effective stresses with the help of qualitative and quantitative TEM observations. Using these observations, an elasto-visco-plastic formulation for b.c.c. crystals is developed in the thermal activation framework. (orig.)

  18. Experimental investigation of thermophysical properties of eutectic Mo–C, graphite and tantalum at high temperatures

    International Nuclear Information System (INIS)

    Senchenko, V N; Belikov, R S; Popov, V S

    2016-01-01

    An experimental technique based on fast electrical heating for investigation of thermophysical properties of refractory materials under high pressures and at high temperatures is considered. A set of thermophysical properties of refractory materials such as specific enthalpy, specific heat capacity, specific resistivity, melting heat of eutectic Mo-C and thermal expansion of graphite and tantalum were determined. The obtained temperature of eutectic melting of MoC 0.82 shows close agreement with equilibrium Mo-C phase diagram. (paper)

  19. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    National Research Council Canada - National Science Library

    Holmes, Kenneth

    2002-01-01

    Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

  20. Surface modification of 17-4PH stainless steel by DC plasma nitriding and titanium nitride film duplex treatment

    International Nuclear Information System (INIS)

    Qi, F.; Leng, Y.X.; Huang, N.; Bai, B.; Zhang, P.Ch.

    2007-01-01

    17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film

  1. Preparation of tantalum carbide layers on carbon using the metalliding process

    Energy Technology Data Exchange (ETDEWEB)

    Massot, L. [Laboratoire de Genie Chimique UMR 5503, Departement Procedes Electrochimiques, Universite Paul Sabatier, 31062 Toulouse Cedex 9 (France)], E-mail: massot@chimie.ups-tlse.fr; Chamelot, P. [Laboratoire de Genie Chimique UMR 5503, Departement Procedes Electrochimiques, Universite Paul Sabatier, 31062 Toulouse Cedex 9 (France); Winterton, P. [UFR Langues vivantes, Universite Paul Sabatier, 31062 Toulouse Cedex 9 (France); Taxil, P. [Laboratoire de Genie Chimique UMR 5503, Departement Procedes Electrochimiques, Universite Paul Sabatier, 31062 Toulouse Cedex 9 (France)

    2009-03-05

    This work concerns the preparation of tantalum carbide films on carbon-based substrates using the metalliding process in LiF/NaF molten medium (60-40 mol%), containing tantalum heptafluorotantalate ions TaF{sub 7}{sup 2-}, in the 800-900 deg. C temperature range. The process uses a metalliding cell symbolised as: (+) C, TaC{sub x}/LiF-NaF-K{sub 2}TaF{sub 7}/Ta (-) involving the dissolution of Ta at the anode and the reduction of Ta ions in TaC{sub x} at the cathode. The experiments of this process were performed with different carbon substrates as cathodic material: graphite, glassy carbon and carbon braid. Samples analysis (SEM-EDS and XRD) after metalliding showed the formation of tantalum carbides (TaC and Ta{sub 2}C) at the surface of the substrate at a relatively low temperature. A kinetic study, based on the control of the cathodic reaction by the intermetallic diffusion, allowed the diffusion parameters, such as Ta/C diffusion coefficient, to be determined at several temperatures. Furthermore, the results are shown to be independent of the type of carbon substrate.

  2. Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

    International Nuclear Information System (INIS)

    Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

    1988-01-01

    Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

  3. Yield strength of molybdenum, tantalum and tungsten at high strain rates and very high temperatures

    International Nuclear Information System (INIS)

    Škoro, G.P.; Bennett, J.R.J.; Edgecock, T.R.; Booth, C.N.

    2012-01-01

    Highlights: ► New experimental data on the yield strength of molybdenum, tantalum and tungsten. ► High strain rate effects at record high temperatures (up to 2700 K). ► Test of the consistency of the Zerilli–Armstrong model at very high temperatures. - Abstract: Recently reported results of the high strain rate, high temperature measurements of the yield strength of tantalum and tungsten have been analyzed along with new experimental results on the yield strength of molybdenum. Thin wires are subjected to high stress by passing a short, fast, high current pulse through a thin wire; the amplitude of the current governs the stress and the repetition rate of the pulses determines the temperature of the wire. The highest temperatures reached in the experiments were 2100 °C (for molybdenum), 2250 °C (for tantalum) and 2450 °C (for tungsten). The strain-rates in the tests were in the range from 500 to 1500 s −1 . The parameters for the constitutive equation developed by Zerilli and Armstrong have been determined from the experimental data and the results have been compared with the data obtained at lower temperatures. An exceptionally good fit is obtained for the deformation of tungsten.

  4. Redox Chemisty of Tantalum Clusters on Silica Characterized by X-ray Absorption Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Nemana,S.; Gates, B.

    2006-01-01

    SiO{sub 2}-supported clusters of tantalum were synthesized from adsorbed Ta(CH{sub 2}Ph){sub 5} by treatment in H{sub 2} at 523 K. The surface species were characterized by X-ray absorption spectroscopy (extended X-ray absorption fine structure (EXAFS) spectroscopy and X-ray absorption near edge spectroscopy (XANES)) and ultraviolet-visible spectroscopy. The EXAFS data show that SiOO{sub 2}-supported tantalum clusters were characterized by a Ta-Ta coordination number of approximately 2, consistent with the presence of tritantalum clusters, on average. When these were reduced in H{sub 2} and reoxidized in O{sub 2}, the cluster nuclearity remained essentially unchanged, although reduction and oxidation occurred, respectively, as shown by XANES and UV-vis spectra; in the reoxidation, the tantalum oxidation state change was approximately two electronic charges per tritantalum cluster. The data demonstrate an analogy between the chemistry of group 5 metals on the SiO{sub 2} support and their chemistry in solution, as determined by the group of Cotton.

  5. Microstructure and mechanical properties of silicon nitride structural ceramics of silicon nitride

    International Nuclear Information System (INIS)

    Strohaecker, T.R.; Nobrega, M.C.S.

    1989-01-01

    The utilization of direct evaluation technic of tenacity for fracturing by hardness impact in silicon nitride ceramics is described. The microstructure were analysied, by Scanning Electron Microscopy, equiped with a microanalysis acessory by X ray energy dispersion. The difference between the values of K IC measure for two silicon nitride ceramics is discussed, in function of the microstructures and the fracture surfaces of the samples studied. (C.G.C.) [pt

  6. Conflict minerals from the Democratic Republic of the Congo: global tantalum processing plants, a critical part of the tantalum supply chain

    Science.gov (United States)

    Papp, John F.

    2014-01-01

    The U.S. Geological Survey (USGS) analyzes mineral and metal supply chains to identify and describe major components of mineral and metal material flows from ore extraction, through intermediate forms, to a final product. Supply chain analyses may be used (1) to identify risks to the United States associated with the supply of critical and strategic minerals and metals and (2) to provide greater supply chain transparency so that policymakers have the fact-based information needed to formulate public policy. This fact sheet focuses on the post-mining/pre-consumer-product part of the tantalum supply chain. The USGS National Minerals Information Center (NMIC) has been asked by governmental and non-governmental organizations to provide information about tantalum, tin, tungsten, and gold (collectively known as “3TG minerals”) processing facilities worldwide in response to U.S. legislation aimed at identifying and removing the supply chain links between the trade in these minerals and civil unrest in the Democratic Republic of the Congo and adjacent countries.

  7. Boron nitride nanosheets reinforced glass matrix composites

    Czech Academy of Sciences Publication Activity Database

    Saggar, Richa; Porwal, H.; Tatarko, P.; Dlouhý, Ivo; Reece, M. J.

    2015-01-01

    Roč. 114, SEP (2015), S26-S32 ISSN 1743-6753 R&D Projects: GA MŠk(CZ) 7AMB14SK155 EU Projects: European Commission(XE) 264526 Institutional support: RVO:68081723 Keywords : Boron nitride nanosheets * Borosilicate glass * Mechanical properties Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 1.162, year: 2015

  8. Alkaline fuel cell with nitride membrane

    Science.gov (United States)

    Sun, Shen-Huei; Pilaski, Moritz; Wartmann, Jens; Letzkus, Florian; Funke, Benedikt; Dura, Georg; Heinzel, Angelika

    2017-06-01

    The aim of this work is to fabricate patterned nitride membranes with Si-MEMS-technology as a platform to build up new membrane-electrode-assemblies (MEA) for alkaline fuel cell applications. Two 6-inch wafer processes based on chemical vapor deposition (CVD) were developed for the fabrication of separated nitride membranes with a nitride thickness up to 1 μm. The mechanical stability of the perforated nitride membrane has been adjusted in both processes either by embedding of subsequent ion implantation step or by optimizing the deposition process parameters. A nearly 100% yield of separated membranes of each deposition process was achieved with layer thickness from 150 nm to 1 μm and micro-channel pattern width of 1μm at a pitch of 3 μm. The process for membrane coating with electrolyte materials could be verified to build up MEA. Uniform membrane coating with channel filling was achieved after the optimization of speed controlled dip-coating method and the selection of dimethylsulfoxide (DMSO) as electrolyte solvent. Finally, silver as conductive material was defined for printing a conductive layer onto the MEA by Ink-Technology. With the established IR-thermography setup, characterizations of MEAs in terms of catalytic conversion were performed successfully. The results of this work show promise for build up a platform on wafer-level for high throughput experiments.

  9. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

    2014-05-28

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  10. Covalent biofunctionalization of silicon nitride surfaces

    NARCIS (Netherlands)

    Arafat, A.; Giesbers, M.; Rosso, M.; Sudhölter, E.J.R.; Schroën, C.G.P.H.; White, R.G.; Li Yang,; Linford, M.R.; Zuilhof, H.

    2007-01-01

    Covalently attached organic monolayers on etched silicon nitride (SixN4; x 3) surfaces were prepared by reaction of SixN4-coated wafers with neat or solutions of 1-alkenes and 1-alkynes in refluxing mesitylene. The surface modification was monitored by measurement of the static water contact angle,

  11. Bandgap engineered graphene and hexagonal boron nitride

    Indian Academy of Sciences (India)

    In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green's ...

  12. Plasmonic spectral tunability of conductive ternary nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Kassavetis, S.; Patsalas, P., E-mail: ppats@physics.auth.gr [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Bellas, D. V.; Lidorikis, E. [Department of Materials Science and Engineering, University of Ioannina, GR-45110 Ioannina (Greece); Abadias, G. [Institut Pprime, Département Physique et Mécanique des Matériaux, Université de Poitiers-CNRS-ENSMA, 86962 Chasseneuil-Futuroscope (France)

    2016-06-27

    Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged as a category of promising alternative plasmonic materials. In this work, we show that ternary transition metal nitrides such as Ti{sub x}Ta{sub 1−x}N, Ti{sub x}Zr{sub 1−x}N, Ti{sub x}Al{sub 1−x}N, and Zr{sub x}Ta{sub 1−x}N share the important plasmonic features with their binary counterparts, while having the additional asset of the exceptional spectral tunability in the entire visible (400–700 nm) and UVA (315–400 nm) spectral ranges depending on their net valence electrons. In particular, we demonstrate that such ternary nitrides can exhibit maximum field enhancement factors comparable with gold in the aforementioned broadband range. We also critically evaluate the structural features that affect the quality factor of the plasmon resonance and we provide rules of thumb for the selection and growth of materials for nitride plasmonics.

  13. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  14. Metal surface nitriding by laser induced plasma

    Science.gov (United States)

    Thomann, A. L.; Boulmer-Leborgne, C.; Andreazza-Vignolle, C.; Andreazza, P.; Hermann, J.; Blondiaux, G.

    1996-10-01

    We study a nitriding technique of metals by means of laser induced plasma. The synthesized layers are composed of a nitrogen concentration gradient over several μm depth, and are expected to be useful for tribological applications with no adhesion problem. The nitriding method is tested on the synthesis of titanium nitride which is a well-known compound, obtained at present by many deposition and diffusion techniques. In the method of interest, a laser beam is focused on a titanium target in a nitrogen atmosphere, leading to the creation of a plasma over the metal surface. In order to understand the layer formation, it is necessary to characterize the plasma as well as the surface that it has been in contact with. Progressive nitrogen incorporation in the titanium lattice and TiN synthesis are studied by characterizing samples prepared with increasing laser shot number (100-4000). The role of the laser wavelength is also inspected by comparing layers obtained with two kinds of pulsed lasers: a transversal-excited-atmospheric-pressure-CO2 laser (λ=10.6 μm) and a XeCl excimer laser (λ=308 nm). Simulations of the target temperature rise under laser irradiation are performed, which evidence differences in the initial laser/material interaction (material heated thickness, heating time duration, etc.) depending on the laser features (wavelength and pulse time duration). Results from plasma characterization also point out that the plasma composition and propagation mode depend on the laser wavelength. Correlation of these results with those obtained from layer analyses shows at first the important role played by the plasma in the nitrogen incorporation. Its presence is necessary and allows N2 dissociation and a better energy coupling with the target. Second, it appears that the nitrogen diffusion governs the nitriding process. The study of the metal nitriding efficiency, depending on the laser used, allows us to explain the differences observed in the layer features

  15. Nitriding behavior of Ni and Ni-based binary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Fonovic, Matej

    2015-01-15

    Gaseous nitriding is a prominent thermochemical surface treatment process which can improve various properties of metallic materials such as mechanical, tribological and/or corrosion properties. This process is predominantly performed by applying NH{sub 3}+H{sub 2} containing gas atmospheres serving as the nitrogen donating medium at temperatures between 673 K and 873 K (400 C and 600 C). NH{sub 3} decomposes at the surface of the metallic specimen and nitrogen diffuses into the surface adjacent region of the specimen whereas hydrogen remains in the gas atmosphere. One of the most important parameters characterizing a gaseous nitriding process is the so-called nitriding potential (r{sub N}) which determines the chemical potential of nitrogen provided by the gas phase. The nitriding potential is defined as r{sub N} = p{sub NH{sub 3}}/p{sub H{sub 2}{sup 3/2}} where p{sub NH{sub 3}} and p{sub H{sub 2}} are the partial pressures of the NH{sub 3} and H{sub 2} in the nitriding atmosphere. In contrast with nitriding of α-Fe where the nitriding potential is usually in the range between 0.01 and 1 atm{sup -1/2}, nitriding of Ni and Ni-based alloys requires employing nitriding potentials higher than 100 atm{sup -1/2} and even up to ∞ (nitriding in pure NH{sub 3} atmosphere). This behavior is compatible with decreased thermodynamic stability of the 3d-metal nitrides with increasing atomic number. Depending on the nitriding conditions (temperature, nitriding potential and treatment time), different phases are formed at the surface of the Ni-based alloys. By applying very high nitriding potential, formation of hexagonal Ni{sub 3}N at the surface of the specimen (known as external nitriding) leads to the development of a compound layer, which may improve tribological properties. Underneath the Ni{sub 3}N compound layer, two possibilities exist: (i) alloying element precipitation within the nitrided zone (known as internal nitriding) and/or (ii) development of metastable and

  16. Separation of zirconium--hafnium by nitride precipitation

    International Nuclear Information System (INIS)

    Anderson, R.N.; Parlee, N.A.

    1977-01-01

    A method is described for the separation of a light reactive metal (e.g., zirconium) from a heavy reactive metal (e.g., hafnium) by forming insoluble nitrides of the metals in a molten metal solvent (e.g., copper) inert to nitrogen and having a suitable density for the light metal nitride to form a separate phase in the upper portion of the solvent and for the heavy metal nitride to form a separate phase in the lower portion of the solvent. Nitriding is performed by maintaining a nitrogen-containing atmosphere over the bath. The light and heavy metals may be an oxide mixture and carbothermically reduced to metal form in the same bath used for nitriding. The nitrides are then separately removed and decomposed to form the desired separate metals. 16 claims, 1 figure

  17. From single-site tantalum complexes to nanoparticles of TaxNy and TaOxNy supported on silica: elucidation of synthesis chemistry by dynamic nuclear polarization surface enhanced NMR spectroscopy and X-ray absorption spectroscopy

    KAUST Repository

    Mohandas, Janet Chakkamadathil

    2017-06-08

    Air-stable catalysts consisting of tantalum nitride nanoparticles represented as a mixture of TaxNy and TaOxNy with diameters in the range of 0.5 to 3 nm supported on highly dehydroxylated silica were synthesized from TaMe5 (Me = methyl) and dimeric Ta-2(OMe)(10) with guidance by the principles of surface organometallic chemistry (SOMC). Characterization of the supported precursors and the supported nanoparticles formed from them was carried out by IR, NMR, UV-Vis, extended X-ray absorption fine structure, and X-ray photoelectron spectroscopies complemented with XRD and high-resolution TEM, with dynamic nuclear polarization surface enhanced NMR spectroscopy being especially helpful by providing enhanced intensities of the signals of H-1, C-13, Si-29, and N-15 at their natural abundances. The characterization data provide details of the synthesis chemistry, including evidence of (a) O-2 insertion into Ta-CH3 species on the support and (b) a binuclear to mononuclear transformation of species formed from Ta-2(OMe)(10) on the support. A catalytic test reaction, cyclooctene epoxidation, was used to probe the supported nanoparticles, with 30% H2O2 serving as the oxidant. The catalysts gave selectivities up to 98% for the epoxide at conversions as high as 99% with a 3.4 wt% loading of Ta present as TaxNy/TaOxNy.

  18. An assessment of the thermodynamic properties of uranium nitride, plutonium nitride and uranium-plutonium mixed nitride

    International Nuclear Information System (INIS)

    Matsui, T.; Ohse, R.W.

    1986-01-01

    Thermodynamic properties such as vapour pressures, heat capacities and enthalpies of formation for UN(s), PuN(s) and (U, Pu)N(s) are critically evaluated. The equations of the vapour pressures and the heat capacities for the three nitrides are assessed. Thermal functions, and thermodynamic functions for the formation of UN(s), PuN(s) and (U, Pu)N(s), are calculated

  19. The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

    International Nuclear Information System (INIS)

    Mitchell, D.R.G.; Stott, F.H.

    1992-01-01

    A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

  20. Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium

    International Nuclear Information System (INIS)

    Anselin, F.

    1966-06-01

    A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [fr

  1. Tantalum acetabular augments in one-stage exchange of infected total hip arthroplasty: a case-control study.

    Science.gov (United States)

    Klatte, Till Orla; Kendoff, Daniel; Sabihi, Reza; Kamath, Atul F; Rueger, Johannes M; Gehrke, Thorsten

    2014-07-01

    During the one-stage exchange procedure for periprosthetic joint infection (PJI) after total hip arthroplasty (THA), acetabular defects challenge reconstructive options. Porous tantalum augments are an established tool for addressing acetabular destruction in aseptic cases, but their utility in septic exchange is unknown. This retrospective case-control study presents the initial results of tantalum augmentation during one-stage exchange for PJI. Primary endpoints were rates of re-infection and short-term complications associated with this technique. Study patients had no higher risk of re-infection with equivalent durability at early follow-up with a re-infection rate in both groups of 4%. In conclusion, tantalum augments are a viable option for addressing acetabular defects in one-stage exchange for septic THA. Further study is necessary to assess long-term durability when compared to traditional techniques for acetabular reconstruction. Copyright © 2014 Elsevier Inc. All rights reserved.

  2. Intragranular Chromium Nitride Precipitates in Duplex and Superduplex Stainless Steel

    OpenAIRE

    Iversen, Torunn Hjulstad

    2012-01-01

    Intragranular chromium nitrides is a phenomenon with detrimental effects on material properties in superduplex stainless steels which have not received much attention. Precipitation of nitrides occurs when the ferritic phase becomes supersaturated with nitrogen and there is insufficient time during cooling for diffusion of nitrogen into austenite. Heat treatment was carried out at between 1060◦C and 1160◦C to study the materials susceptibility to nitride precipitation with...

  3. Corrosion stability of cermets on the base of titanium nitride

    International Nuclear Information System (INIS)

    Kajdash, O.N.; Marinich, M.A.; Kuzenkova, M.A.; Manzheleev, I.V.

    1991-01-01

    Corrosion resistance of titanium nitride and its cermets in 5% of HCl, 7% of HNO 3 , 10% of H 2 SO 4 is studied. It is established that alloys TiN-Ni-Mo alloyed with chromium (from 10 to 15%) possess the highest corrosion resistance. Cermet TiN-Cr has the higher stability than titanium nitride due to formation of binary nitride (Ti, Cr)N

  4. Synthesis of Uranium nitride powders using metal uranium powders

    International Nuclear Information System (INIS)

    Yang, Jae Ho; Kim, Dong Joo; Oh, Jang Soo; Rhee, Young Woo; Kim, Jong Hun; Kim, Keon Sik

    2012-01-01

    Uranium nitride (UN) is a potential fuel material for advanced nuclear reactors because of their high fuel density, high thermal conductivity, high melting temperature, and considerable breeding capability in LWRs. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. The carbothermic reduction has an advantage in the production of fine powders. However it has many drawbacks such as an inevitable engagement of impurities, process burden, and difficulties in reusing of expensive N 15 gas. Manufacturing concerns issued in the carbothermic reduction process can be solved by changing the starting materials from oxide powder to metals. However, in nitriding process of metal, it is difficult to obtain fine nitride powders because metal uranium is usually fabricated in the form of bulk ingots. In this study, a simple reaction method was tested to fabricate uranium nitride powders directly from uranium metal powders. We fabricated uranium metal spherical powder and flake using a centrifugal atomization method. The nitride powders were obtained by thermal treating those metal particles under nitrogen containing gas. We investigated the phase and morphology evolutions of powders during the nitriding process. A phase analysis of nitride powders was also a part of the present work

  5. Review of actinide nitride properties with focus on safety aspects

    Energy Technology Data Exchange (ETDEWEB)

    Albiol, Thierry [CEA Cadarache, St Paul Lez Durance Cedex (France); Arai, Yasuo [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    2001-12-01

    This report provides a review of the potential advantages of using actinide nitrides as fuels and/or targets for nuclear waste transmutation. Then a summary of available properties of actinide nitrides is given. Results from irradiation experiments are reviewed and safety relevant aspects of nitride fuels are discussed, including design basis accidents (transients) and severe (core disruptive) accidents. Anyway, as rather few safety studies are currently available and as many basic physical data are still missing for some actinide nitrides, complementary studies are proposed. (author)

  6. Research and development of nitride fuel cycle technology in Japan

    International Nuclear Information System (INIS)

    Minato, Kazuo; Arai, Yasuo; Akabori, Mitsuo; Tamaki, Yoshihisa; Itoh, Kunihiro

    2004-01-01

    The research on the nitride fuel was started for an advanced fuel, (U, Pn)N, for fast reactors, and the research activities have been expanded to minor actinide bearing nitride fuels. The fuel fabrication, property measurements, irradiation tests and pyrochemical process experiments have been made. In 2002 a five-year-program named PROMINENT was started for the development of nitride fuel cycle technology within the framework of the Development of Innovative Nuclear Technologies by the Ministry of Education, Culture, Sports, Science and Technology of Japan. In the research program PROMINENT, property measurements, pyrochemical process and irradiation experiments needed for nitride fuel cycle technology are being made. (author)

  7. Development of pseudocapacitive molybdenum oxide–nitride for electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Ting, Yen-Jui Bernie [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Wu, Haoran [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Kherani, Nazir P. [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Lian, Keryn, E-mail: keryn.lian@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada)

    2015-03-15

    A thin film Mo oxide–nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 °C) thermal nitridation. Two nitridation environments, N{sub 2} and NH{sub 3}, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N{sub 2}. However, the electrochemical analyses showed that the surface of the N{sub 2}-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH{sub 3}. Cycle life of the resultant N{sub 2}-treated Mo oxide–nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide–nitride electrodes was demonstrated and showed high rate performance. - Highlights: • Mo(O,N){sub x} was developed by electrodeposition and nitridation in N{sub 2} or NH{sub 3}. • N{sub 2} treated Mo(O,N){sub x} showed a capacitive performance superior to that treated by NH{sub 3}. • The promising electrochemical performance was due to the formation of γ-Mo{sub 2}N.

  8. Modeling the Gas Nitriding Process of Low Alloy Steels

    Science.gov (United States)

    Yang, M.; Zimmerman, C.; Donahue, D.; Sisson, R. D.

    2013-07-01

    The effort to simulate the nitriding process has been ongoing for the last 20 years. Most of the work has been done to simulate the nitriding process of pure iron. In the present work a series of experiments have been done to understand the effects of the nitriding process parameters such as the nitriding potential, temperature, and time as well as surface condition on the gas nitriding process for the steels. The compound layer growth model has been developed to simulate the nitriding process of AISI 4140 steel. In this paper the fundamentals of the model are presented and discussed including the kinetics of compound layer growth and the determination of the nitrogen diffusivity in the diffusion zone. The excellent agreements have been achieved for both as-washed and pre-oxided nitrided AISI 4140 between the experimental data and simulation results. The nitrogen diffusivity in the diffusion zone is determined to be constant and only depends on the nitriding temperature, which is ~5 × 10-9 cm2/s at 548 °C. It proves the concept of utilizing the compound layer growth model in other steels. The nitriding process of various steels can thus be modeled and predicted in the future.

  9. Atomic-layer deposition of silicon nitride

    CERN Document Server

    Yokoyama, S; Ooba, K

    1999-01-01

    Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

  10. Boron nitride encapsulated graphene infrared emitters

    International Nuclear Information System (INIS)

    Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R.

    2016-01-01

    The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

  11. Boron nitride encapsulated graphene infrared emitters

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R., E-mail: g.r.nash@exeter.ac.uk [College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF (United Kingdom)

    2016-03-28

    The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

  12. Nitridation of vanadium by ion beam irradiation

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

    1994-01-01

    The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

  13. Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

    International Nuclear Information System (INIS)

    Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

    2004-01-01

    We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

  14. Influence of process parameters on plasma electrolytic surface treatment of tantalum for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Sowa, Maciej, E-mail: maciej.sowa@polsl.pl [Faculty of Chemistry, Silesian University of Technology, B. Krzywoustego Street 6, 44-100 Gliwice (Poland); Woszczak, Maja; Kazek-Kęsik, Alicja [Faculty of Chemistry, Silesian University of Technology, B. Krzywoustego Street 6, 44-100 Gliwice (Poland); Dercz, Grzegorz [Institute of Materials Science, University of Silesia, 75 Pułku Piechoty Street 1A, 41-500 Chorzów (Poland); Korotin, Danila M. [M.N. Mikheev Institute of Metal Physics of the Ural Branch of Russian Academy of Sciences, S. Kovalevskoi Street 18, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, Mira Street 19, 620002 Yekaterinburg (Russian Federation); Zhidkov, Ivan S. [Institute of Physics and Technology, Ural Federal University, Mira Street 19, 620002 Yekaterinburg (Russian Federation); Kurmaev, Ernst Z. [M.N. Mikheev Institute of Metal Physics of the Ural Branch of Russian Academy of Sciences, S. Kovalevskoi Street 18, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, Mira Street 19, 620002 Yekaterinburg (Russian Federation); Cholakh, Seif O. [Institute of Physics and Technology, Ural Federal University, Mira Street 19, 620002 Yekaterinburg (Russian Federation); Basiaga, Marcin [Faculty of Biomedical Engineering, Silesian University of Technology, Gen. de Gaulle’a Street 66, 41-800 Zabrze (Poland); Simka, Wojciech, E-mail: wojciech.simka@polsl.pl [Faculty of Chemistry, Silesian University of Technology, B. Krzywoustego Street 6, 44-100 Gliwice (Poland)

    2017-06-15

    Highlights: • 2-step plasma electrolytic oxidation (PEO) of tantalum was investigated. • PEO coatings surface composition were reflected by the composition of anodizing baths. • Hydrophobic surfaces were obtained from acetate and formate containing baths. • Bioactive phases were identified. - Abstract: This work aims to quantify the effect of anodization voltage and electrolyte composition used during DC plasma electrolytic oxidation (PEO), operated as a 2-step process, on the surface properties of the resulting oxide coatings on tantalum. The first step consisted of galvanostatic anodization (150 mA cm{sup −2}) of the tantalum workpiece up to several limiting voltages (200, 300, 400 and 500 V). After attaining the limiting voltage, the process was switched to voltage control, which resulted in a gradual decrease of the anodic current density. The anodic treatment was realized in a 0.5 M Ca(H{sub 2}PO{sub 2}){sub 2} solution, which was then modified by the addition of 1.15 M Ca(HCOO){sub 2} as well as 1.15 M and 1.5 M Mg(CH{sub 3}COO){sub 2}. The increasing voltage of anodization led to the formation of thicker coatings, with larger pores and enriched with electrolytes species to a higher extent. The solutions containing HCOO{sup −} and CH{sub 3}COO{sup −} ions caused the formation of coatings which were slightly hydrophobic (high contact angle). In the case of the samples anodized up to 500 V, scattered crystalline deposits were observed. Bioactive phases, such as hydroxyapatite, were detected in the treated oxide coatings by XRD and XPS.

  15. Environment sensitive embedding energies of impurities, and grain boundary stability in tantalum

    International Nuclear Information System (INIS)

    Krasko, G.L.

    1996-01-01

    Metalloid impurities have a very low solubility in tantalum, and therefore prefer to segregate at the grain boundaries (GBs). In order to analyze the energetics of the impurities on the tantalum GB, the LMTO calculations were performed on a simple 8-atom supercell emulating a typical (capped trigonal prism) GB environment. The so-called environment-sensitive embedding energies were calculated for hydrogen, boron, carbon, nitrogen, oxygen, phosphorus, and sulphur, as a function of the electron charge density due to the host atoms at the impurity site. The calculations showed that, at the electron density typical of a GB, carbon has the lowest energy (followed by Nitrogen and Boron) and thus would compete with the other impurities for the site on the GB, tending to displace them from the GB. The above energies were then used in a modified Finnis-Sinclair embedded atom approach for calculating the cohesive energies and the equilibrium interplanar distances in the vicinity of a (111) Σ3 tilt GB plane, both for the clean GB and that with an impurity. These distances were found to oscillate, returning to the value corresponding to the equilibrium spacing between (111) planes in bulk BCC tantalum by the 10th--12th plane off the GB. Carbon, nitrogen and boron somewhat dampen the deformation wave (making the oscillations less than in the clean GB), while oxygen, phosphorus and sulphur result in an increase of the oscillations. The cohesive energies follow the same trend, the GB with carbon being the most stable. Thus, carbon, nitrogen and boron may be thought of as being cohesion enhancers, while oxygen, phosphorus and sulphur result in decohesion effects

  16. Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials.

    Science.gov (United States)

    Wang, Shouzhi; Zhang, Lei; Sun, Changlong; Shao, Yongliang; Wu, Yongzhong; Lv, Jiaxin; Hao, Xiaopeng

    2016-05-01

    A type of single-crystal gallium nitride mesoporous membrane is fabricated and its supercapacitor properties are demonstrated for the first time. The supercapacitors exhibit high-rate capability, stable cycling life at high rates, and ultrahigh power density. This study may expand the range of crystals as high-performance electrode materials in the field of energy storage. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Silicon Nitride Antireflection Coatings for Photovoltaic Cells

    Science.gov (United States)

    Johnson, C.; Wydeven, T.; Donohoe, K.

    1984-01-01

    Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

  18. Nanopillar arrays of amorphous carbon nitride

    Science.gov (United States)

    Sai Krishna, Katla; Pavan Kumar, B. V. V. S.; Eswaramoorthy, Muthusamy

    2011-07-01

    Nanopillar arrays of amorphous carbon nitride have been prepared using anodic aluminum oxide (AAO) membrane as a template. The amine groups present on the surface of these nanopillars were exploited for functionalization with oleic acid in order to stabilize the nanostructure at the aqueous-organic interface and also for the immobilization of metal nanoparticles and protein. These immobilised nanoparticles were found to have good catalytic activity.

  19. Use of a Tantalum Liner to Reduce Bore Erosion and Increase Muzzle Velocity in Two-Stage Light Gas Guns

    Science.gov (United States)

    Bogdanoff, David W.

    2015-01-01

    Muzzle velocities and gun erosion predicted by earlier numerical simulations of two stage light gas guns with steel gun tubes were in good agreement with experimental values. In a subsequent study, simulations of high performance shots were repeated with rhenium (Re) gun tubes. Large increases in muzzle velocity (2 - 4 km/sec) were predicted for Re tubes. In addition, the hydrogen-produced gun tube erosion was, in general, predicted to be zero with Re tubes. Tantalum (Ta) has some mechanical properties superior to those of Re. Tantalum has a lower modulus of elasticity than Re for better force transmission from the refractory metal liner to an underlying thick wall steel tube. Tantalum also has greater ductility than Re for better survivability during severe stress/strain cycles. Also, tantalum has been used as a coating or liner in military powder guns with encouraging results. Tantalum has, however, somewhat inferior thermal properties to those of rhenium, with a lower melting point and lower density and thermal conductivity. The present study was undertaken to see to what degree the muzzle velocity gains of rhenium gun tubes (over steel tubes) could be achieved with tantalum gun tubes. Nine high performance shots were modeled with a new version of our CFD gun code for steel, rhenium and tantalum gun tubes. For all except the highest velocity shot, the results with Ta tubes were nearly identical with those for Re tubes. Even for the highest velocity shot, the muzzle velocity gain over a steel tube using Ta was 82% of the gain obtained using Re. Thus, the somewhat inferior thermal properties of Ta (when compared to those of Re) translate into only very slightly poorer overall muzzle velocity performance. When this fact is combined with the superior mechanical properties of Ta and the encouraging performance of Ta liners/coatings in military powder guns, tantalum is to be preferred over Re as a liner/coating material for two stage light gas guns to increase muzzle

  20. XPS and GDOES Characterization of Porous Coating Enriched with Copper and Calcium Obtained on Tantalum via Plasma Electrolytic Oxidation

    Directory of Open Access Journals (Sweden)

    Krzysztof Rokosz

    2016-01-01

    Full Text Available XPS and GDOES characterizations of porous coatings on tantalum after Plasma Electrolytic Oxidation (PEO at 450 V for 3 minutes in electrolyte containing concentrated (85% phosphoric acid with calcium nitrate and copper (II nitrate are described. Based on the obtained data, it may be concluded that the PEO coating consists of tantalum (Ta5+, calcium (Ca2+, copper (Cu2+  and Cu+, and phosphates (PO43-. It has to be pointed out that copper and calcium are distributed throughout the volume. The authors also propose a new model of PEO, based on the derivative of GDOES signals with sputtering time.

  1. Effect of second spherical cations on ionic equilibrium displacement of pentavalent tantalum complexes in fluoride melts

    International Nuclear Information System (INIS)

    Agulyanskij, A.I.

    1980-01-01

    The melts of the systems M 2 TaF 7 -MF (where M-Na, K, Rb) and CsTaF 4 -CsF are investigated at 850 deg using the method of IR spectroscopy. It is shown that ion equilibrium TaF 7 2- reversible TaF 6 - +F - is shifted to the left when sodium to cesium electrolytes are used. The change of vibrational frequencies of TaF 7 2- and TaF 6 - ions is explained by the change of the ratio of ion and covalent contributions to the interaction energy in the inner and outer spheres of coordination in pentavalent tantalum

  2. Reduction of a dimeric tantalum(III) compound in acetonitrile solution by pulse radiolysis

    International Nuclear Information System (INIS)

    Koulkes-Pujo, A.-M.; Le Motais, B.; Hubert-Pfalzgraf, L.G.

    1986-01-01

    The reduction of the compound [Ta 2 Cl 6 (4Me-py) 4 ] (4Me-py 4-methylpyridine), having a metal-metal double bond, has been achieved by pulse radiolysis in dry oxygen-free acetonitrile. The reduction occurs by CH 3 CN - which leads to a transient species assigned to a tantalum dimer in a 2.5 oxidation state. The spectrum of this species has been established. It decays by a first-order process to give a new transient species which in turn decays more slowly by a second-order reaction. (author)

  3. Some organoperoxo complexes of antimony, niobium and tantalum and their oxidation properties

    International Nuclear Information System (INIS)

    Tarafder, M.T.H.

    1999-05-01

    Several novel organoperoxo complexes of Nb(V), Ta(V) and Sb(V) have been synthesized and characterized. The complexes have the compositions [M(O 2 ) 2 L Cl] and [M(O 2 ) 2 L'] [L = monodentate and bidentate, neutral ligand; L' = bidentate, uninegative ligand]. These complexes are very reactive to both organic and inorganic substrates. Niobium and tantalum complexes were found to oxidize phosphines and arsines to their oxides. These also oxidize olefins to epoxides under stoichiometric conditions while under catalytic conditions, ring opening of the epoxides occur producing α-hydroxyketone when the substrate is trans-stilbene. The antimony complexes are decidedly inert towards oxidation. (author)

  4. Leakage Current Degradation Due to Ion Drift and Diffusion in Tantalum and Niobium Oxide Capacitors

    Directory of Open Access Journals (Sweden)

    Kuparowitz Martin

    2017-06-01

    Full Text Available High temperature and high electric field applications in tantalum and niobium capacitors are limited by the mechanism of ion migration and field crystallization in a tantalum or niobium pentoxide insulating layer. The study of leakage current (DCL variation in time as a result of increasing temperature and electric field might provide information about the physical mechanism of degradation. The experiments were performed on tantalum and niobium oxide capacitors at temperatures of about 125°C and applied voltages ranging up to rated voltages of 35 V and 16 V for tantalum and niobium oxide capacitors, respectively. Homogeneous distribution of oxygen vacancies acting as positive ions within the pentoxide layer was assumed before the experiments. DCL vs. time characteristics at a fixed temperature have several phases. At the beginning of ageing the DCL increases exponentially with time. In this period ions in the insulating layer are being moved in the electric field by drift only. Due to that the concentration of ions near the cathode increases producing a positively charged region near the cathode. The electric field near the cathode increases and the potential barrier between the cathode and insulating layer decreases which results in increasing DCL. However, redistribution of positive ions in the insulator layer leads to creation of a ion concentration gradient which results in a gradual increase of the ion diffusion current in the direction opposite to the ion drift current component. The equilibrium between the two for a given temperature and electric field results in saturation of the leakage current value. DCL vs. time characteristics are described by the exponential stretched law. We found that during the initial part of ageing an exponent n = 1 applies. That corresponds to the ion drift motion only. After long-time application of the electric field at a high temperature the DCL vs. time characteristics are described by the exponential

  5. Effect of silicon, tantalum, and tungsten doping and polarization on bioactivity of hydroxyapatite

    Science.gov (United States)

    Dhal, Jharana

    Hydroxyapatite (HAp) ceramics has important applications as bone graft because of the structural and compositional similarities with bone tissue. However, inferior osteogenic capacity to bone and poor mechanical properties have been identified to be major disadvantages of synthetic HAp compared to the living bone tissue. The objective of the current study is to evaluate the effect of doping with higher valent cations (Tungsten, tantalum, and silicon) and polarization or combination of both on change in property of doped HAp and subsequent impact its bioactivity. In vitro study with human osteoblast cells was used to investigate the influences of doping and polarization on bone cell-materials interactions. The bioactivity of doped HAp was compared with pure HAp. Effect of doping and polarization on the change in HAp was investigated by monitoring change in mineral phases, stored charge, and activation energy of HAp. Activation energy of depolarization was used to explain the possible mechanism of polarization in doped samples. Bioactivity of HAp increased when doped with tantalum and tungsten. Polarization further increased the bioactivity of tungsten- and tantalum-doped samples. Increase in bioactivity on polarized and doped samples was attributed to increase in surface energy and increase in surface wettability. Whereas, an increase in bioactivity on doped unpolarized surface was attributed to change in microstructure. Polarized charge calculated from TSDC indicates that polarized charge decreases on tantalum- and tungsten-doped HAp. The decrease in polarized charge was attributed to the presence of significant amount of different phases that may hinder the ionic motion in doped samples. However, for silicon-doped HAp, TSDC study showed no difference in the mechanism of polarization between doped and undoped samples. Increase in silicon doping decreased the grain size though mechanism is not affected by grain size. Total stored charge decreased with increase in

  6. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  7. Tantalum films with well-controlled roughness grown by oblique incidence deposition

    Science.gov (United States)

    Rechendorff, K.; Hovgaard, M. B.; Chevallier, J.; Foss, M.; Besenbacher, F.

    2005-08-01

    We have investigated how tantalum films with well-controlled surface roughness can be grown by e-gun evaporation with oblique angle of incidence between the evaporation flux and the surface normal. Due to a more pronounced shadowing effect the root-mean-square roughness increases from about 2 to 33 nm as grazing incidence is approached. The exponent, characterizing the scaling of the root-mean-square roughness with length scale (α), varies from 0.75 to 0.93, and a clear correlation is found between the angle of incidence and root-mean-square roughness.

  8. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  9. Pre-equilibrium decay process in alpha particle induced reactions on thulium and tantalum

    International Nuclear Information System (INIS)

    Mohan, Rao, A.V.; Chintalapudi, S.N.

    1994-01-01

    Alpha particle induced reactions on the target elements Thulium and Tantalum were investigated upto 60 MeV using stacked foil activation technique and Ge(Li) gamma ray spectroscopy method. Excitation functions for six reactions of 169 Tm(α,xn); x=1-4 and 181 Ta(α,xn); x=2,4 were studied. The experimental results were compared with the updated version of Hybrid model (ALICE/90) using initial exciton configuration n 0 =4(4pOh). A general agreement was found for all the reactions with this option. (author)

  10. Pre-equilibrium decay process in alpha particle induced reactions on thulium and tantalum

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, Rao, A.V.; Chintalapudi, S.N. (Inter Univ. Consortium for Dept. of atomic Energy Facilities, Calcutta (India))

    1994-01-01

    Alpha particle induced reactions on the target elements Thulium and Tantalum were investigated upto 60 MeV using stacked foil activation technique and Ge(Li) gamma ray spectroscopy method. Excitation functions for six reactions of [sup 169]Tm([alpha],xn); x=1-4 and [sup 181]Ta([alpha],xn); x=2,4 were studied. The experimental results were compared with the updated version of Hybrid model (ALICE/90) using initial exciton configuration n[sub 0]=4(4pOh). A general agreement was found for all the reactions with this option. (author).

  11. Graphene-induced strengthening in spark plasma sintered tantalum carbide–nanotube composite

    International Nuclear Information System (INIS)

    Lahiri, Debrupa; Khaleghi, Evan; Bakshi, Srinivasa Rao; Li, Wei; Olevsky, Eugene A.; Agarwal, Arvind

    2013-01-01

    Transverse rupture strength of spark plasma sintered tantalum carbide (TaC) composites reinforced with long and short carbon nanotubes (CNTs) is reported. The rupture strength depends on the transformation behavior of the CNTs during spark plasma sintering, which is dependent on their length. The TaC composite with short nanotubes shows the highest specific rupture strength. Shorter CNTs transform into multi-layered graphene sheets between TaC grains, whereas long ones retain the tubular structure. Two-dimensionsal graphene platelets offer higher resistance to pull-out, resulting in delayed fracture and higher strength.

  12. Linkage of molecular units in the chemistry of niobium and tantalum cluster halides

    International Nuclear Information System (INIS)

    Perrin, C.; Sergent, M.

    1991-01-01

    In low valency niobium and tantalum halides, interunit linkages are observed between the (Me 6 X 12 )X 6 units. They are insulators and interesting magnetic properties are observed, due to the intrinsic potential magnetism of the Me 6 cluster and depending on the inserted cations, for instance rare earths in MM'Nb 6 Cl 18 (M = monovalent cation, M' = rare earth). Of special interest are the niobium iodides which exhibit (Me 6 X 8 )X 6 units, an exception in the niobium chemistry; interesting properties have been reported for some of these iodides

  13. Tantalum-178 - a short-lived nuclide for nuclear medicine: development of a potential generator system

    International Nuclear Information System (INIS)

    Neirinckx, R.D.; Jones, A.G.; Davis, M.A.; Harris, G.I.; Holman, B.L.

    1978-01-01

    We describe a chemical separation that may form the basis of a generator system for the short-lived radionuclide Ta-178 (T/sub 1/2/ = 9 min). The parent nuclide W-178 (T/sub 1/2/ = 21.7 days) is loaded on an anion-exchange column and the daughter eluted with a mixture of dilute hydrochloric acid and hydrogen peroxide. The yields of tantalum and the breakthrough of the tungsten parent as a function of the eluting conditions are discussed, and preliminary animal distribution data are presented for various treatments of the eluant solution

  14. Influence of tantalum underlayer on magnetization dynamics in Ni81Fe19 films

    International Nuclear Information System (INIS)

    Kwon, Jae Hyun; Deorani, Praveen; Yoon, Jungbum; Yang, Hyunsoo; Hayashi, Masamitsu

    2015-01-01

    The effect of tantalum (Ta) underlayer is investigated in Ni 81 Fe 19 thin films for magnetization dynamics. The damping parameters extracted from spin wave measurements increase systematically with increasing Ta thickness, whereas the damping parameters from ferromagnetic resonance measurements are found to be weakly dependent on the Ta thickness. The difference is attributed to propagating properties of spin wave and short spin diffusion length in Ta. The group velocity of spin waves is found to be constant for different Ta thicknesses, and nonreciprocity of spin waves is not affected by the Ta thickness. The experimental observations are supported by micromagnetic simulations

  15. Bonding silicon nitride using glass-ceramic

    International Nuclear Information System (INIS)

    Dobedoe, R.S.

    1995-01-01

    Silicon nitride has been successfully bonded to itself using magnesium-aluminosilicate glass and glass-ceramic. For some samples, bonding was achieved using a diffusion bonder, but in other instances, following an initial degassing hold, higher temperatures were used in a nitrogen atmosphere with no applied load. For diffusion bonding, a small applied pressure at a temperature below which crystallisation occurs resulted in intimate contact. At slightly higher temperatures, the extent of the reaction at the interface and the microstructure of the glass-ceramic joint was highly sensitive to the bonding temperature. Bonding in a nitrogen atmosphere resulted in a solution-reprecipitation reaction. A thin layer of glass produced a ''dry'', glass-free joint, whilst a thicker layer resulted in a continuous glassy join across the interface. The chromium silicide impurities within the silicon nitride react with the nucleating agent in the glass ceramic, which may lead to difficulty in producing a fine glass-ceramic microstructure. Slightly lower temperatures in nitrogen resulted in a polycrystalline join but the interfacial contact was poor. It is hoped that one of the bonds produced may be developed to eventually form part of a graded joint between silicon nitride and a high temperature nickel alloy. (orig.)

  16. Ion-nitriding of austenitic stainless steels

    International Nuclear Information System (INIS)

    Pacheco, O.; Hertz, D.; Lebrun, J.P.; Michel, H.

    1995-01-01

    Although ion-nitriding is an extensively industrialized process enabling steel surfaces to be hardened by nitrogen diffusion, with a resulting increase in wear, seizure and fatigue resistance, its direct application to stainless steels, while enhancing their mechanical properties, also causes a marked degradation in their oxidation resistance. However, by adaption of the nitriding process, it is possible to maintain the improved wear resistant properties while retaining the oxidation resistance of the stainless steel. The controlled diffusion permits the growth of a nitrogen supersaturated austenite layer on parts made of stainless steel (AISI 304L and 316L) without chromium nitride precipitation. The diffusion layer remains stable during post heat treatments up to 650 F for 5,000 hrs and maintains a hardness of 900 HV. A very low and stable friction coefficient is achieved which provides good wear resistance against stainless steels under diverse conditions. Electrochemical and chemical tests in various media confirm the preservation of the stainless steel characteristics. An example of the application of this process is the treatment of Reactor Control Rod Cluster Assemblies (RCCAs) for Pressurized Water Nuclear Reactors

  17. Thermodynamics of silicon nitridation - Effect of hydrogen

    Science.gov (United States)

    Shaw, N. J.; Zeleznik, F. J.

    1982-01-01

    Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

  18. RF plasma nitriding of severely deformed iron-based alloys

    International Nuclear Information System (INIS)

    Ferkel, H.; Glatzer, M.; Estrin, Y.; Valiev, R.Z.; Blawert, C.; Mordike, B.L.

    2003-01-01

    The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10 -5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of ε and γ' nitrides in the compound layer, with a preferential formation of γ' at the expense of the α-phase at the higher nitriding temperature. The corresponding surface hardness was up to 950 HV0.01. While the HPT-processed St2K50 exhibits both nitride phases after nitriding at 350 deg. C, only the γ'-phase was observed after nitriding at 400 deg. C. A surface hardness of up to 1050 HV0.01 was measured for this steel. The high alloyed steel X5CrNi1810 exhibited the highest increase in surface hardness when HPT was combined with nitriding at 350 deg. C. The surface hardness of this steel was greater than 1400 HV0.025. The XRD analyses indicate the formation of the expanded austenite (S-phase) in the surface layer as a result of RF plasma nitriding. Furthermore, after HPT X5CrNi1810 was transformed completely into deformation martensite which did not transform back to austenite under thermochemical treatment. However, in the case of nitriding of the HPT-processed high alloyed steel at 400 deg. C, the formation of the S-phase was less pronounced. In view of the observed XRD peak broadening, the formation of nitrides, such as e.g. CrN, cannot be ruled out

  19. Plasma nitriding - an eco friendly surface hardening process

    International Nuclear Information System (INIS)

    Mukherjee, S.

    2015-01-01

    Surface hardening is a process of heating the metal such that the surface gets only hardened. This process is adopted for many components like gears, cams, and crankshafts, which desire high hardness on the outer surface with a softer core to withstand the shocks. So, to attain such properties processes like carburising, nitriding, flame hardening and induction hardening are employed. Amongst these processes nitriding is the most commonly used process by many industries. In nitriding process the steel material is heated to a temperature of around 550 C and then exposed to atomic nitrogen. This atomic nitrogen reacts with iron and other alloying elements and forms nitrides, which are very hard in nature. By this process both wear resistance and hardness of the product can be increased. The atomic nitrogen required for this process can be obtained using ammonia gas (gas nitriding), cyanide based salt bath (liquid nitriding) and plasma medium (plasma nitriding). However, plasma nitriding has recently received considerable industrial interest owing to its characteristic of faster nitrogen penetration, short treatment time, low process temperature, minimal distortion, low energy use and easier control of layer formation compared with conventional techniques such as gas and liquid nitriding. This process can be used for all ferrous materials including stainless steels. Plasma nitriding is carried out using a gas mixture of nitrogen and hydrogen gas at sub atmospheric pressures hence, making it eco-friendly in nature. Plasma nitriding allows modification of the surface layers and hardness profiles by changing the gas mixture and temperature. The wide applicable temperature range enables a multitude of applications, beyond the possibilities of gas or salt bath processes. This has led to numerous applications of this process in industries such as the manufacture of machine parts for plastics and food processing, packaging and tooling as well as pumps and hydraulic, machine

  20. Synthesis of IV-VI Transition Metal Carbide and Nitride Nanoparticles Using a Reactive Mesoporous Template for Electrochemical Hydrogen Evolution Reaction

    KAUST Repository

    Alhajri, Nawal Saad

    2016-01-01

    Interstitial carbides and nitrides of early transition metals in Groups IV-VI exhibit platinum-like behavior which makes them a promising candidate to replace noble metals in a wide variety of reactions. Most synthetic methods used to prepare these materials lead to bulk or micron size powder which limits their use in reactions in particular in catalytic applications. Attempts toward the production of transition metal carbide and nitride nanoparticles in a sustainable, simple and cheap manner have been rapidly increasing. In this thesis, a new approach was presented to prepare nano-scale transition metal carbides and nitrides of group IV-VI with a size as small as 3 nm through the reaction of transition metal precursor with mesoporous graphitic carbon nitride (mpg-C3N4) that not only provides confined spaces for nanoparticles formation but also acts as a chemical source of nitrogen and carbon. The produced nanoparticles were characterized by powder X-ray diffraction (XRD), temperature-programmed reaction with mass spectroscopy (MS), CHN elemental analyses, thermogravimetric analyses (TGA), nitrogen sorption, X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The effects of the reaction temperature, the ratio of the transition metal precursor to the reactive template (mpg-C3N4), and the selection of the carrier gas (Ar, N2, and NH3) on the resultant crystal phases and structures were investigated. The results indicated that different tantalum phases with cubic structure, TaN, Ta2CN, and TaC, can be formed under a flow of nitrogen by changing the reaction temperatures. Two forms of tantalum nitride, namely TaN and Ta3N5, were selectively formed under N2 and NH3 flow, respectively. Significantly, the formation of TaC, Ta2CN, and TaN can be controlled by altering the weight ratio of the C3N4 template relative to the Ta precursor at 1573 K under a flow of nitrogen where high C3N4/Ta precursor ratio generally resulted in high carbide

  1. The plastic response of Tantalum in Quasi-Isentropic Compression Ramp and Release

    Science.gov (United States)

    Moore, Alexander; Brown, Justin; Lim, Hojun; Lane, J. Matthew D.

    2017-06-01

    The mechanical response of various forms of tantalum under extreme pressures and strain rates is studied using dynamic quasi-isentropic compression loading conditions in atomistic simulations. Ramp compression in bcc metals under these conditions tend to show a significant strengthening effect with increasing pressure; however, due to limitations of experimental methods in such regimes, the underlying physics for this phenomenon is not well understood. Molecular dynamics simulations provide important information about the plasticity mechanisms and can be used to investigate this strengthening. MD simulations are performed on nanocrystalline Ta and single crystal defective Ta with dislocations and point defects to uncover how the material responds and the underlying plasticity mechanisms. The different systems of solid Ta are seen to plastically deform through different mechanisms. Fundamental understanding of tantalum plasticity in these high pressure and strain rate regimes is needed to model and fully understand experimental results. Sandia National Labs is a multi program laboratory managed and operated by Sandia Corp., a wholly owned subsidiary of Lockheed Martin Corp., for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  2. Structural changes in the human vas deferens after tantalum clip occlusion and conventional vasectomy.

    Science.gov (United States)

    Kothari, L K; Gupta, A S

    1978-02-01

    In 15 human subjects, the vasa deferentia were occluded by applying two tantalum clips on one side and by conventional vasectomy with silk ligatures on the other. After 2 weeks, the occluded segments were recovered for histopathologic examination of serial sections. Obstructing the seminal tract did not, as such, produce any significant change in the vas: the distal and proximal segments appeared to be essentially similar and normal. At the actual site of occlusion, however, tantalum clips produced marked flattening of the tube, complete loss of lining epithelium, distortion of the muscular lamellae, and areas of hemorrhage. The lumen was converted into a narrow slit. Under the ligatures, the damage was largely confined to denudation of the mucosal epithelium. The mucosa of the intersegment left unexcised between two clips showed hyalinization, invasion by macrophages, and degeneration of the epithelium. The changes under the clips suggest that, although clip occlusion may offer several advantages, sterility cannot be reversed merely by removing the clips. The mechanisms of these changes, different in the case of clips and ligatures, are discussed and some possible long-term consequences are considered.

  3. Effect of Preconditioning and Soldering on Failures of Chip Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Soldering of molded case tantalum capacitors can result in damage to Ta205 dielectric and first turn-on failures due to thermo-mechanical stresses caused by CTE mismatch between materials used in the capacitors. It is also known that presence of moisture might cause damage to plastic cases due to the pop-corning effect. However, there are only scarce literature data on the effect of moisture content on the probability of post-soldering electrical failures. In this work, that is based on a case history, different groups of similar types of CWR tantalum capacitors from two lots were prepared for soldering by bake, moisture saturation, and longterm storage at room conditions. Results of the testing showed that both factors: initial quality of the lot, and preconditioning affect the probability of failures. Baking before soldering was shown to be effective to prevent failures even in lots susceptible to pop-corning damage. Mechanism of failures is discussed and recommendations for pre-soldering bake are suggested based on analysis of moisture characteristics of materials used in the capacitors' design.

  4. Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

    2016-05-01

    In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

  5. Antibacterial properties and cytocompatibility of tantalum oxide coatings with different silver content

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Heng-Li [School of Dentistry, China Medical University, Taichung 404, Taiwan (China); Chang, Yin-Yu, E-mail: yinyu@mail2000.com.tw; Chen, Hung-Jui; Chou, Yu-Kai [Department of Mechanical and Computer-Aided Engineering, National Formosa University, Yunlin 632, Taiwan (China); Lai, Chih-Ho [School of Medicine, China Medical University, Taichung 404, Taiwan (China); Chen, Michael Y. C. [Division of Oral and Maxillofacial Surgery, China Medical University Hospital, Taichung 404, Taiwan (China)

    2014-03-15

    Tantalum (Ta) oxides and their coatings have been proved to increase their applications in the biomedical fields by improving osseointegration and wear resistance. In this study, Ta oxide coatings containing different proportions of Ag are deposited on SS304 materials. A twin-gun magnetron sputtering system is used to deposit the tantalum oxide-Ag coating. In this study, Staphylococcus aureus, which exhibits physiological commensalism on the human skin, nares, and mucosal and oral areas, is chosen as the model for in vitro antibacterial analyses via a fluorescence staining method using Syto9. The cytocompatibility and adhesive morphology of human skin fibroblast cells (CCD-966SK) on the coatings are also determined by using the microculture tetrazolium assay. This study shows that Ta{sub 2}O{sub 5} and Ta{sub 2}O{sub 5}-Ag coatings with 12.5 at. % of Ag exhibit improved antibacterial effects against S. aureus and have good skin fibroblast cell cellular biocompatibility.

  6. Electrochemical Capacitors Based on Aligned Carbon Nanotubes Directly Synthesized on Tantalum Substrates

    International Nuclear Information System (INIS)

    Kim, Byung Woo; Chung, Hae Geun; Kim, Woong; Min, Byoung Koun; Kim, Hong Gon

    2010-01-01

    We demonstrate that vertically aligned carbon nanotubes can be synthesized directly on tantalum substrate via waterassisted chemical vapor deposition and evaluate their properties as electrochemical capacitors. The mean diameter of the carbon nanotubes was 7.1 ± 1.5 nm, and 70% of them had double walls. The intensity ratio of G-band to D-band in Raman spectra was as high as 5, indicating good quality of the carbon nanotubes. Owing to the alignment and low equivalent series resistance, the carbon nanotube based supercapacitors showed good rate performance. Rectangular shape of cyclic voltammogram was maintained even at the scan rate of > 1 V/s in 1 M sulfuric acid aqueous solution. Specific capacitance was well-retained (∼94%) even when the discharging current density dramatically increased up to 145 A/g. Consequently, specific power as high as 60 kW/kg was obtained from as-grown carbon nanotubes in aqueous solution. Maximum specific energy of ∼20 Wh/kg was obtained when carbon nanotubes were electrochemically oxidized and operated in organic solution. Demonstration of direct synthesis of carbon nanotubes on tantalum current collectors and their applications as supercapacitors could be an invaluable basis for fabrication of high performance carbon nanotube supercapacitors

  7. M551 metals melting experiment. [space manufacturing of aluminum alloys, tantalum alloys, stainless steels

    Science.gov (United States)

    Li, C. H.; Busch, G.; Creter, C.

    1976-01-01

    The Metals Melting Skylab Experiment consisted of selectively melting, in sequence, three rotating discs made of aluminum alloy, stainless steel, and tantalum alloy. For comparison, three other discs of the same three materials were similarly melted or welded on the ground. The power source of the melting was an electron beam unit. Results are presented which support the concept that the major difference between ground base and Skylab samples (i.e., large elongated grains in ground base samples versus nearly equiaxed and equal sized grains in Skylab samples) can be explained on the basis of constitutional supercooling, and not on the basis of surface phenomena. Microstructural observations on the weld samples and present explanations for some of these observations are examined. In particular, ripples and their implications to weld solidification were studied. Evidence of pronounced copper segregation in the Skylab A1 weld samples, and the tantalum samples studied, indicates a weld microhardness (and hence strength) that is uniformly higher than the ground base results, which is in agreement with previous predictions. Photographs are shown of the microstructure of the various alloys.

  8. Characteristics of laser produced plasmas of hafnium and tantalum in the 1-7 nm region

    Science.gov (United States)

    Li, Bowen; Otsuka, Takamitsu; Sokell, Emma; Dunne, Padraig; O'Sullivan, Gerry; Hara, Hiroyuki; Arai, Goki; Tamura, Toshiki; Ono, Yuichi; Dinh, Thanh-Hung; Higashiguchi, Takeshi

    2017-11-01

    Soft X-ray (SXR) spectra from hafnium and tantalum laser produced plasmas were recorded in the 1-7 nm region using two Nd:YAG lasers with pulse lengths of 170 ps and 10 ns, respectively, operating at a range of power densities. The maximum focused peak power density was 2. 3 × 1014 W cm-2 for 170 ps pulses and 1. 8 × 1012 W cm-2 for 10 ns pulses, respectively. Two intense quasicontinuous intensity bands resulting from n = 4 - n = 4 and n = 4 - n = 5 unresolved transition arrays (UTAs) dominate both sets of experimental spectra. Comparison with calculations performed with the Cowan suite of atomic structure codes as well as consideration of previous experimental and theoretical results aided identification of the most prominent features in the spectra. For the 10 ns spectrum, the highest ion stage that could be identified from the n = 4 - n = 5 arrays were lower than silver-like Hf25+ and Ta26+ (which has a 4 d 104 f ground configuration) indicating that the plasma temperature attained was too low to produce ions with an outermost 4 d subshell, while for the 170 ps plasmas the presence of significantly higher stages was deduced and lines due to 4 d-5 p transitions were clearly evident. Furthermore, we show an enhancement of emission from tantalum using dual laser irradiation, and the effect of pre-pulse durations and delay times between two pulses are demonstrated.

  9. Mid-term results of total knee arthroplasty with a porous tantalum monoblock tibial component.

    Science.gov (United States)

    Hayakawa, Kazue; Date, Hideki; Tsujimura, Shunzo; Nojiri, Sho; Yamada, Harumoto; Nakagawa, Kenji

    2014-01-01

    The objectives of the present study were to assess the mid-term results of cementless total knee arthroplasty (TKA) with the porous tantalum monoblock tibial component and to examine the time course of bone changes on plain radiographs. The subjects were 32 patients, 29 patients were available for follow-up. We investigated the mid-term results of TKA after a mean follow-up period of 7 years and 8 months. We also examined changes of the bone over time on plain radiographs. The Knee Society Clinical Rating scores showed significant improvement. Bone changes around the tibial component were as follows: new bone formation and longitudinal trabecular thickening in 41.4% (Type A), only longitudinal trabecular thickening in 41.4% (Type B), and no changes in 17.2% (Type C). Type A and B changes were more frequent in patients with osteoarthritis, whereas Type C was only seen in patients with rheumatoid arthritis. Three knees had an initial gap, but this disappeared in all cases, and no new radiolucent lines were detected. Stress shielding was observed in seven knees (21.9%), but there was no implant loosening related to it. When we examined the relationship between the mechanical axis and the locations of the tips of the tibial pegs in patients with or without stress shielding, no significant differences were found. The results of mid-term follow-up have demonstrated favorable bone ingrowth, suggesting that porous tantalum is a promising material for cementless TKA. © 2013.

  10. Effect of strain rate and dislocation density on the twinning behavior in tantalum

    Energy Technology Data Exchange (ETDEWEB)

    Florando, Jeffrey N., E-mail: florando1@llnl.gov; Swift, Damian C.; Barton, Nathan R.; McNaney, James M.; Kumar, Mukul [Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, CA 94550 (United States); El-Dasher, Bassem S. [TerraPower LLC, Bellevue, WA 98005 (United States); Chen, Changqiang [Materials Research Laboratory, University of Illinois at Urbana Champaign, Urbana, IL 61801 (United States); Ramesh, K. T.; Hemker, Kevin J. [Department of Mechanical Engineering, Johns Hopkins University, Baltimore, MD 21218 (United States)

    2016-04-15

    The conditions which affect twinning in tantalum have been investigated across a range of strain rates and initial dislocation densities. Tantalum samples were subjected to a range of strain rates, from 10{sup −4}/s to 10{sup 3}/s under uniaxial stress conditions, and under laser-induced shock-loading conditions. In this study, twinning was observed at 77 K at strain rates from 1/s to 10{sup 3}/s, and during laser-induced shock experiments. The effect of the initial dislocation density, which was imparted by deforming the material to different amounts of pre-strain, was also studied, and it was shown that twinning is suppressed after a given amount of pre-strain, even as the global stress continues to increase. These results indicate that the conditions for twinning cannot be represented solely by a critical global stress value, but are also dependent on the evolution of the dislocation density. In addition, the analysis shows that if twinning is initiated, the nucleated twins may continue to grow as a function of strain, even as the dislocation density continues to increase.

  11. Measurement of the production of charged pions by protons on a tantalum target

    CERN Document Server

    Catanesi, M.G.; Edgecock, R.; Ellis, Malcolm; Robbins, S.; Soler, F.J.P.; Gossling, C.; Bunyatov, S.; Krasnoperov, A.; Popov, B.; Serdiouk, V.; Tereschenko, V.; Di Capua, E.; Vidal-Sitjed, G.; Artamonov, A.; Arce, P.; Giani, S.; Gilardoni, S.; Gorbunov, P.; Grant, A.; Grossheim, A.; Gruber, P.; Ivanchenko, V.; Kayis-Topaksu, A.; Panman, J.; Papadopoulos, I.; Pasternak, J.; Tcherniaev, E.; Tsukerman, I.; Veenhof, R.; Wiebusch, C.; Zucchelli, P.; Blondel, A.; Borghi, S.; Campanelli, M.; Morone, M.C.; Prior, G.; Schroeter, R.; Engel, R.; Meurer, C.; Kato, I.; Gastaldi, U.; Mills, G.B.; Graulich, J.S.; Gregoire, G.; Bonesini, M.; De Min, A.; Ferri, F.; Paganoni, M.; Paleari, F.; Kirsanov, M.; Bagulya, A.; Grichine, V.; Polukhina, N.; Palladino, V.; Coney, L.; Schmitz, D.; Barr, G.; De Santo, A.; Pattison, C.; Zuber, K.; Bobisut, F.; Gibin, D.; Guglielmi, A.; Mezzetto, M.; Dumarchez, J.; Vannucci, F.; Dore, U.; Orestano, D.; Pastore, F.; Tonazzo, A.; Tortora, L.; Booth, C.; Buttar, C.; Hodgson, P.; Howlett, L.; Bogomilov, M.; Chizhov, M.; Kolev, D.; Tsenov, R.; Apollonio, M.; Chimenti, P.; Giannini, G.; Santin, G.; Burguet-Castell, J.; Cervera-Villanueva, A.; Gomez-Cadenas, J.J.; Martin-Albo, J.; Novella, P.; Sorel, M.; Tornero, A.

    2007-01-01

    A measurement of the double-differential cross-section for the production of charged pions in proton--tantalum collisions emitted at large angles from the incoming beam direction is presented. The data were taken in 2002 with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12 \\GeVc hitting a tantalum target with a thickness of 5% of a nuclear interaction length. The angular and momentum range covered by the experiment ($100 \\MeVc \\le p < 800 \\MeVc$ and $0.35 \\rad \\le \\theta <2.15 \\rad$) is of particular importance for the design of a neutrino factory. The produced particles were detected using a small-radius cylindrical time projection chamber (TPC) placed in a solenoidal magnet. Track recognition, momentum determination and particle identification were all performed based on the measurements made with the TPC. An elaborate system of detectors in the beam line ensured the identification of the incident particles. Results a...

  12. 77 FR 51825 - Ferrovanadium and Nitrided Vanadium From Russia

    Science.gov (United States)

    2012-08-27

    ... Nitrided Vanadium From Russia Determination On the basis of the record \\1\\ developed in the subject five... order on ferrovanadium and nitrided vanadium from Russia would not be likely to lead to continuation or recurrence of material injury to an industry in the United States within a reasonably foreseeable time. \\1...

  13. Fabrication of functional structures on thin silicon nitride membranes

    NARCIS (Netherlands)

    Ekkels, P.; Tjerkstra, R.W.; Krijnen, Gijsbertus J.M.; Berenschot, Johan W.; Brugger, J.P.; Elwenspoek, Michael Curt

    A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of

  14. Process for producing ceramic nitrides anc carbonitrides and their precursors

    Science.gov (United States)

    Brown, G.M.; Maya, L.

    1987-02-25

    A process for preparing ceramic nitrides and carbon nitrides in the form of very pure, fine particulate powder. Appropriate precursors is prepared by reaching a transition metal alkylamide with ammonia to produce a mixture of metal amide and metal imide in the form of an easily pyrolyzable precipitate.

  15. Low Temperature Gaseous Nitriding of a Stainless Steel Containing Strong Nitride Formers

    DEFF Research Database (Denmark)

    Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    Low temperature thermochemical surface hardening of the precipitation hardening austenitic stainless steel A286 in solution treated state was investigated. A286 contains, besides high amounts of Cr, also substantial amounts of strong nitride formers as Ti, Al and V. It is shown that simultaneous...

  16. Synthesis and characterization of polystyrene embolization particles doped with tantalum oxide nanoparticles for X-ray contrast.

    Science.gov (United States)

    Morrison, Rachel; Thompson, James; Bird, Luke; Hill, Mark A; Townley, Helen

    2015-08-01

    Radiopaque and fluorescent embolic particles have been synthesized and characterised to match the size of vasculature found in tumours to ensure effective occlusion of the vessels. A literature search showed that the majority of vessels surrounding a tumour were less than 50 µm and therefore polydispersed polystyrene particles with a peak size of 50 µm have been synthesised. The embolic particles contain 5-8 nm amorphous tantalum oxide nanoparticles which provide X-ray contrast. Embolic particles containing up to 9.4 wt% tantalum oxide were prepared and showed significant contrast compared to the undoped polystyrene particles. The X-ray contrast of the embolic particles was shown to be linear (R(2) = 0.9) with respect to the concentration of incorporated tantalum nanoparticles. A model was developed which showed that seventy-five 50 µm embolic particles containing 10% tantalum oxide could provide the same contrast as 5 cm of bone. Therefore, the synthesized particles would provide sufficient X-ray contrast to enable visualisation within a tumour.

  17. Successive heterolytic cleavages of H2 achieve N2 splitting on silica-supported tantalum hydrides: A DFT proposed mechanism

    KAUST Repository

    Solá ns, Xavier Luis; Chow, Catherine; Gouré , Eric; Kaya, Yasemin; Basset, Jean-Marie; Taoufik, Mostafa; Quadrelli, Elsje Alessandra; Eisenstein, Odile

    2012-01-01

    DFT(B3PW91) calculations have been carried out to propose a pathway for the N2 cleavage by H2 in the presence of silica-supported tantalum hydride complexes [(≡ SiO)2TaHx] that forms [(≡SiO)2Ta(NH)(NH2)] (Science2007, 317, 1056). The calculations

  18. ICP-MS determination of rare earth elements, yttrium, uranium and thorium in niobium-tantalum rich samples

    International Nuclear Information System (INIS)

    Sunilkumar, Beena; Padmasubashini, V.

    2013-01-01

    ICP-MS is a powerful and extremely sensitive technique which has been applied successfully for the determination of REEs in diverse geological samples. In the present work, ICP-MS has been applied for the rapid determination of REEs, yttrium as well as uranium and thorium in niobium and tantalum rich samples, using a fluoride fusion method for sample dissolution

  19. Tantalum coating on TiO{sub 2} nanotubes induces superior rate of matrix mineralization and osteofunctionality in human osteoblasts

    Energy Technology Data Exchange (ETDEWEB)

    Frandsen, Christine J.; Brammer, Karla S. [Materials Science and Engineering, University of California at San Diego, La Jolla, CA 92093 (United States); Noh, Kunbae [Corporate Research Institute, Cheil Industries, Inc., Gocheon-Dong, Uiwang-Si, Gyeonggi-Do, 437-711 (Korea, Republic of); Johnston, Gary [Materials Science and Engineering, University of California at San Diego, La Jolla, CA 92093 (United States); Jin, Sungho, E-mail: jin@ucsd.edu [Materials Science and Engineering, University of California at San Diego, La Jolla, CA 92093 (United States); Mechanical and Aerospace Engineering, University of California at San Diego, La Jolla, CA 92093 (United States)

    2014-04-01

    Nanostructured surface geometries have been the focus of a multitude of recent biomaterial research, and exciting findings have been published. However, only a few publications have directly compared nanostructures of various surface chemistries. The work herein directly compares the response of human osteoblast cells to surfaces of identical nanotube geometries with two well-known orthopedic biomaterials: titanium oxide (TiO{sub 2}) and tantalum (Ta). The results reveal that the Ta surface chemistry on the nanotube architecture enhances alkaline phosphatase activity, and promotes a ∼ 30% faster rate of matrix mineralization and bone-nodule formation when compared to results on bare TiO{sub 2} nanotubes. This study implies that unique combinations of surface chemistry and nanostructure may influence cell behavior due to distinctive physico-chemical properties. These findings are of paramount importance to the orthopedics field for understanding cell behavior in response to subtle alterations in nanostructure and surface chemistry, and will enable further insight into the complex manipulation of biomaterial surfaces. With increased focus in the field of orthopedic materials research on nanostructured surfaces, this study emphasizes the need for careful and systematic review of variations in surface chemistry in concurrence with nanotopographical changes. - Highlights: • A TiO{sub 2} nanotube surface structure was coated with tantalum. • Osteoblast cell response was compared between the tantalum coated and as-formed TiO{sub 2} nanotube surface. • We observed superior rates of bone matrix mineralization and osteoblast maturation on the tantalum coated nanotube surface.

  20. Tantalum coating on TiO2 nanotubes induces superior rate of matrix mineralization and osteofunctionality in human osteoblasts

    International Nuclear Information System (INIS)

    Frandsen, Christine J.; Brammer, Karla S.; Noh, Kunbae; Johnston, Gary; Jin, Sungho

    2014-01-01

    Nanostructured surface geometries have been the focus of a multitude of recent biomaterial research, and exciting findings have been published. However, only a few publications have directly compared nanostructures of various surface chemistries. The work herein directly compares the response of human osteoblast cells to surfaces of identical nanotube geometries with two well-known orthopedic biomaterials: titanium oxide (TiO 2 ) and tantalum (Ta). The results reveal that the Ta surface chemistry on the nanotube architecture enhances alkaline phosphatase activity, and promotes a ∼ 30% faster rate of matrix mineralization and bone-nodule formation when compared to results on bare TiO 2 nanotubes. This study implies that unique combinations of surface chemistry and nanostructure may influence cell behavior due to distinctive physico-chemical properties. These findings are of paramount importance to the orthopedics field for understanding cell behavior in response to subtle alterations in nanostructure and surface chemistry, and will enable further insight into the complex manipulation of biomaterial surfaces. With increased focus in the field of orthopedic materials research on nanostructured surfaces, this study emphasizes the need for careful and systematic review of variations in surface chemistry in concurrence with nanotopographical changes. - Highlights: • A TiO 2 nanotube surface structure was coated with tantalum. • Osteoblast cell response was compared between the tantalum coated and as-formed TiO 2 nanotube surface. • We observed superior rates of bone matrix mineralization and osteoblast maturation on the tantalum coated nanotube surface

  1. Problems and possibilities of development of boron nitride ceramics

    International Nuclear Information System (INIS)

    Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

    1988-01-01

    The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

  2. Electrochemical behavior of rare earth metals and their nitrides

    International Nuclear Information System (INIS)

    Ito, Yasuhiko; Goto, Takuya

    2004-01-01

    Pyrometallurgical recycle process using molten salts is considered to be a high potential in pyro-reprocess technologies for spent nitride fuels, and it is important to understand chemical and electro-chemical behavior of nitrides and metals in molten salts. In this study, cadmium nitrates deposited on the anode Cd plate in motlen salt (LiCl-KCl) with addition of Li 3 N are examined. The cadmium nitrates deposited have various compositions corresponding to polarization potentials and then, the relationship between the deposition potential of nitride Cd and their composition is cleared. Their standard chemical potential of CdN is estimated from electrochemical measurement. And then, potential-pH 3- diagram is drawn by voltametry examination of nitride resolution behavior with using thermochemical data of nitrides. (A. Hishinuma)

  3. Exploring electrolyte preference of vanadium nitride supercapacitor electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Bo; Chen, Zhaohui; Lu, Gang [Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Wang, Tianhu [School of Electrical Information and Engineering, Jiangsu University of Technology, Changzhou 213001 (China); Ge, Yunwang, E-mail: ywgelit@126.com [Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023 (China)

    2016-04-15

    Highlights: • Hierarchical VN nanostructures were prepared on graphite foam. • Electrolyte preference of VN supercapacitor electrodes was explored. • VN showed better capacitive property in organic and alkaline electrolytes than LiCl. - Abstract: Vanadium nitride hierarchical nanostructures were prepared through an ammonia annealing procedure utilizing vanadium pentoxide nanostructures grown on graphite foam. The electrochemical properties of hierarchical vanadium nitride was tested in aqueous and organic electrolytes. As a result, the vanadium nitride showed better capacitive energy storage property in organic and alkaline electrolytes. This work provides insight into the charge storage process of vanadium nitride and our findings can shed light on other transition metal nitride-based electrochemical energy storage systems.

  4. Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

    Energy Technology Data Exchange (ETDEWEB)

    Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

    2017-05-12

    The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

  5. The Effect of Polymer Char on Nitridation Kinetics of Silicon

    Science.gov (United States)

    Chan, Rickmond C.; Bhatt, Ramakrishna T.

    1994-01-01

    Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

  6. Growth of Low Defect Density Gallium Nitride (GaN) Films on Novel Tantalum Carbide (TaC) Substrates for Improved Device Performance

    Science.gov (United States)

    2009-05-01

    2 Figure 2. Schematic of a Schottky diode structure (a) grown on an insulating substrate such as sapphire that requires front side...an on-axis substrate at 1000 °C taken (a) at a high magnification and (b) in a region where micropores were observed. ..........8 Figure 5. The 5 x...is useful for vertical high power devices. It can also be made insulating by growing it in a very pure state, which is useful for lateral high

  7. Radiofrequency cold plasma nitrided carbon steel: Microstructural and micromechanical characterizations

    International Nuclear Information System (INIS)

    Bouanis, F.Z.; Bentiss, F.; Bellayer, S.; Vogt, J.B.; Jama, C.

    2011-01-01

    Highlights: → C38 carbon steel samples were plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge. → RF plasma treatment enables nitriding for non-heated substrates. → The morphological and chemical analyses show the formation of a uniform thickness on the surface of the nitrided C38 steel. → Nitrogen plasma active species diffuse into the samples and lead to the formation of Fe x N. → The increase in microhardness values for nitrided samples with plasma processing time is interpreted by the formation of a thicker nitrided layer on the steel surface. - Abstract: In this work, C38 carbon steel was plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge on non-heated substrates. General characterizations were performed to compare the chemical compositions, the microstructures and hardness of the untreated and plasma treated surfaces. The plasma nitriding was carried out on non-heated substrates at a pressure of 16.8 Pa, using N 2 gas. Surface characterizations before and after N 2 plasma treatment were performed by means of the electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Vickers microhardness measurements. The morphological and chemical analysis showed the formation of a uniform structure on the surface of the nitrided sample with enrichment in nitrogen when compared to untreated sample. The thickness of the nitride layer formed depends on the treatment time duration and is approximately 14 μm for 10 h of plasma treatment. XPS was employed to obtain chemical-state information of the plasma nitrided steel surfaces. The micromechanical results show that the surface microhardness increases as the plasma-processing time increases to reach, 1487 HV 0.005 at a plasma processing time of 8 h.

  8. Radiofrequency cold plasma nitrided carbon steel: Microstructural and micromechanical characterizations

    Energy Technology Data Exchange (ETDEWEB)

    Bouanis, F.Z. [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France); Bentiss, F. [Laboratoire de Chimie de Coordination et d' Analytique, Faculte des Sciences, Universite Chouaib Doukkali, B.P. 20, M-24000 El Jadida (Morocco); Bellayer, S.; Vogt, J.B. [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France); Jama, C., E-mail: charafeddine.jama@ensc-lille.fr [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France)

    2011-05-16

    Highlights: {yields} C38 carbon steel samples were plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge. {yields} RF plasma treatment enables nitriding for non-heated substrates. {yields} The morphological and chemical analyses show the formation of a uniform thickness on the surface of the nitrided C38 steel. {yields} Nitrogen plasma active species diffuse into the samples and lead to the formation of Fe{sub x}N. {yields} The increase in microhardness values for nitrided samples with plasma processing time is interpreted by the formation of a thicker nitrided layer on the steel surface. - Abstract: In this work, C38 carbon steel was plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge on non-heated substrates. General characterizations were performed to compare the chemical compositions, the microstructures and hardness of the untreated and plasma treated surfaces. The plasma nitriding was carried out on non-heated substrates at a pressure of 16.8 Pa, using N{sub 2} gas. Surface characterizations before and after N{sub 2} plasma treatment were performed by means of the electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Vickers microhardness measurements. The morphological and chemical analysis showed the formation of a uniform structure on the surface of the nitrided sample with enrichment in nitrogen when compared to untreated sample. The thickness of the nitride layer formed depends on the treatment time duration and is approximately 14 {mu}m for 10 h of plasma treatment. XPS was employed to obtain chemical-state information of the plasma nitrided steel surfaces. The micromechanical results show that the surface microhardness increases as the plasma-processing time increases to reach, 1487 HV{sub 0.005} at a plasma processing time of 8 h.

  9. Nano-particulate Aluminium Nitride/Al: An Efficient and Versatile Heterogeneous Catalyst for the Synthesis of Biginelli Scaffolds

    Science.gov (United States)

    Tekale, S. U.; Tekale, A. B.; Kanhe, N. S.; Bhoraskar, S. V.; Pawar, R. P.

    2011-12-01

    Nano-particulate aluminium nitride/Al (7:1) is reported as a new heterogeneous solid acid catalyst for the synthesis of 3, 4-dihydroxypyrimidi-2-(1H)-ones and their sulphur analogues using the Biginelli reaction. This method involves short reaction time, easy separation, high yields and purity of products.

  10. Electrochemical capacitance performance of titanium nitride nanoarray

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Yibing, E-mail: ybxie@seu.edu.cn [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China); Wang, Yong [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Du, Hongxiu [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China)

    2013-12-01

    Highlights: • TiN nanoarray is formed by a nitridation process of TiO{sub 2} in ammonia atmosphere. • TiN nanoarray exhibits much higher EDLC capacitance than TiO{sub 2} nanoarray. • The specific capacitance of TiN nanoarray achieves a high level of 99.7 mF cm{sup −2}. • A flexible solid-state supercapacitor is constructed by TiN nanoarray and PVA gel. -- Abstract: In this study, titanium nitride (TiN) nanoarrays with a short nanotube and long nanopore structure have been prepared by an anodization process of ultra thin titanium foil in ethylene glycol (EG) solution containing ammonium fluoride, subsequent calcination process in an air atmosphere, and final nitridation process in an ammonia atmosphere. The morphology and microstructure characterization has been conducted using field emission scanning electron microscope and X-ray diffraction. The electrochemical properties have been investigated through cyclic voltammetry and electrochemical impedance spectrum measurements. The electrochemical capacitance performance has been investigated by galvanostatic charge–discharge measurements in the acidic, neural and alkali electrolyte solution. Well-defined TiN nanoarrays contribute a much higher capacitance performance than titania (TiO{sub 2}) in the supercapacitor application due to the extraordinarily improved electrical conductivity. Such an electrochemical capacitance can be further enhanced by increasing aspect ratio of TiN nanoarray from short nanotubes to long nanopores. A flexible supercapacitor has been constructed using two symmetrical TiN nanoarray electrodes and a polyvinyl alcohol (PVA) gel electrolyte with H{sub 2}SO{sub 4}–KCl–H{sub 2}O–EG. Such a supercapacitor has a highly improved potential window and still keeps good electrochemical energy storage. TiN nanoarray with a high aspect ratio can act well as an ultra thin film electrode material of flexible supercapacitor to contribute a superior capacitance performance.

  11. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  12. Packing C60 in Boron Nitride Nanotubes

    Science.gov (United States)

    Mickelson, W.; Aloni, S.; Han, Wei-Qiang; Cumings, John; Zettl, A.

    2003-04-01

    We have created insulated C60 nanowire by packing C60 molecules into the interior of insulating boron nitride nanotubes (BNNTs). For small-diameter BNNTs, the wire consists of a linear chain of C60 molecules. With increasing BNNT inner diameter, unusual C60 stacking configurations are obtained (including helical, hollow core, and incommensurate) that are unknown for bulk or thin-film forms of C60. C60 in BNNTs thus presents a model system for studying the properties of dimensionally constrained ``silo'' crystal structures. For the linear-chain case, we have fused the C60 molecules to form a single-walled carbon nanotube inside the insulating BNNT.

  13. Doping of III-nitride materials

    OpenAIRE

    Pampili, Pietro; Parbrook, Peter J.

    2016-01-01

    In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as ex...

  14. Stability analysis of zigzag boron nitride nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Rai, Hari Mohan, E-mail: rai.2208@gmail.com; Late, Ravikiran; Saxena, Shailendra K.; Kumar, Rajesh; Sagdeo, Pankaj R. [Indian Institute of Technology, Indore –452017 (India); Jaiswal, Neeraj K. [Discipline of Physics, PDPM- Indian Institute of Information Technology, Design and Manufacturing, Jabalpur – 482005 (India); Srivastava, Pankaj [Computational Nanoscience and Technology Lab. (CNTL), ABV- Indian Institute of Information Technology and Management, Gwalior – 474015 (India)

    2015-05-15

    We have explored the structural stability of bare and hydrogenated zigzag boron nitride nanoribbons (ZBNNRs). In order to investigate the structural stability, we calculate the cohesive energy for bare, one-edge and both edges H-terminated ZBNNRs with different widths. It is found that the ZBNNRs with width Nz=8 are energetically more favorable than the lower-width counterparts (Nz<8). Bare ZBNNRs have been found energetically most stable as compared to the edge terminated ribbons. Our analysis reveals that the structural stability is a function of ribbon-width and it is not affected significantly by the type of edge-passivation (one-edge or both-edges)

  15. Magnesium doping of boron nitride nanotubes

    Science.gov (United States)

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  16. Hardness of carbides, nitrides, and borides

    International Nuclear Information System (INIS)

    Schroeter, W.

    1981-01-01

    Intermetallic compounds of metals with non-metals such as C, N, and B show different hardness. Wagner's interaction parameter characterizes manner and extent of the interaction between the atoms of the substance dissolved and the additional elements in metallic mixed phases. An attempt has been made to correlate the hardness of carbides, nitrides, and borides (data taken from literature) with certain interaction parameters and associated thermodynamic quantities (ΔH, ΔG). For some metals of periods 4, 5, and 6 corresponding relations were found between microhardness, interaction parameters, heat of formation, and atomic number

  17. The failure of aluminium nitride under shock

    International Nuclear Information System (INIS)

    Pickup, I.M.; Bourne, N.K.

    2002-01-01

    The shear strength of aluminium nitride has been measured over a range of impact stresses by measuring lateral stresses in plate impact experiments. The range of impact stress spanned several key shock thresholds for the material, pre and post Hugoniot elastic limit and up to values where the hexagonal to cubic phase transition starts. The shear strength measurements indicate significant inelastic damage at stress levels in excess of the HEL, but a significant recovery of strength at the highest impact stress was observed. This stress equates to the phase transition stress. The shear strength behaviour is compared to that of silicon carbide, which does not exhibit a phase change at these impact velocities

  18. Surface enrichment with chrome and nitriding of IF steel under an abnormal glow discharge

    International Nuclear Information System (INIS)

    Meira, S.R.; Borges, P.C.; Bernardelli, E.A.

    2014-01-01

    The objective of this work is to evaluate the influence of surface enrichment of IF steel with chrome, and nitriding, the formation of the nitrided layer. Thus, IF steel samples were subjected to surface enrichment process, using 409 stainless steel as a target for sputtering, followed by plasma nitriding, both under a dc abnormal glow discharge. The enrichment treatment was operated at 1200 ° C for 3h. The nitriding treatment was operated at 510 ° C for 2 h. The influence of the treatments on the layers formed was studied through optical microscopy (OM), scan electron microscopy (SEM), X-ray diffraction (XRD) and Vickers microindentation. The results show that the enrichment is effective to enrich the IF surface, furthermore, improves the characteristics of nitriding, comparing nitriding samples to nitriding and enriched, was observed needles of nitrides, as well as a higher hardness, which is associated with the nitrides of chrome, on the nitriding and enriched samples. (author)

  19. Modified porous tantalum rod technique for the treatment of femoral head osteonecrosis.

    Science.gov (United States)

    Pakos, Emilios E; Megas, Panayiotis; Paschos, Nikolaos K; Syggelos, Spyridon A; Kouzelis, Antonios; Georgiadis, Georgios; Xenakis, Theodoros A

    2015-11-18

    To study a modified porous tantalum technique for the treatment of osteonecrosis of the femoral head. The porous tantalum rod was combined with endoscopy, curettage, autologous bone grafting and use of bone marrow aspirates from iliac crest aspiration in 49 patients (58 hips) with a mean age of 38 years. The majority of the patients had idiopathic osteonecrosis, followed by corticosteroid-induced osteonecrosis. Thirty-eight hips were of Steinberg stage II disease and 20 hips were of stage III disease. Patients were followed for 5 years and were evaluated clinically with the Merle D'Aubigne and Postel score and radiologically. The primary outcome of the study was survival based on the conversion to total hip arthroplasty (THA). Secondary outcomes included deterioration of the osteonecrosis to a higher disease stage at 5 years compared to the preoperative period and identification of factors that were associated with survival. The Kaplan-Meier survival analysis was performed to evaluate the survivorship of the prosthesis, and the Fisher exact test was performed to test associations between various parameters with survival. No patient developed any serious intraoperative or postoperative complication including implant loosening or migration and donor site morbidity. During the 5-year follow up, 1 patient died, 7 patients had disease progression and 4 hips were converted to THA. The 5-year survival based on conversion to THA was 93.1% and the respective rate based on disease progression was 87.9%. Stage II disease was associated with statistically significant better survival rates compared to stage III disease (P = 0.04). The comparison between idiopathic and non-idiopathic osteonecrosis and between steroid-induced and non-steroid-induced osteonecrosis did not showed any statistically significant difference in survival rates. The clinical evaluation revealed statistically significantly improved Merle d'Aubigne scores at 12 mo postoperatively compared to the

  20. Microstructural characterization of pulsed plasma nitrided 316L stainless steel

    International Nuclear Information System (INIS)

    Asgari, M.; Barnoush, A.; Johnsen, R.; Hoel, R.

    2011-01-01

    Highlights: → The low temperature pulsed plasma nitrided layer of 316 SS was studied. → The plastic deformation induced in the austenite due to nitriding is characterized by EBSD at different depths (i.e., nitrogen concentration). → Nanomechanical properties of the nitride layer was investigated by nanoindentation at different depths (i.e., nitrogen concentration). → High hardness, high nitrogen concentration and high dislocation density is detected in the nitride layer. → The hardness and nitrogen concentration decreased sharply beyond the nitride layer. - Abstract: Pulsed plasma nitriding (PPN) treatment is one of the new processes to improve the surface hardness and tribology behavior of austenitic stainless steels. Through low temperature treatment (<440 deg. C), it is possible to obtain unique combinations of wear and corrosion properties. Such a combination is achieved through the formation of a so-called 'extended austenite phase'. These surface layers are often also referred to as S-phase, m-phase or γ-phase. In this work, nitrided layers on austenitic stainless steels AISI 316L (SS316L) were examined by means of a nanoindentation method at different loads. Additionally, the mechanical properties of the S-phase at different depths were studied. Electron back-scatter diffraction (EBSD) examination of the layer showed a high amount of plasticity induced in the layer during its formation. XRD results confirmed the formation of the S-phase, and no deleterious CrN phase was detected.

  1. Electronic structure and mechanical properties of plasma nitrided ferrous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Portolan, E. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil); Baumvol, I.J.R. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil); Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre 91509-970 (Brazil); Figueroa, C.A., E-mail: cafiguer@ucs.br [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil)

    2009-04-15

    The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p{sub 3/2} photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN{sub x}). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

  2. Corrosion fatigue behaviour of ion nitrided AISI 4140 steel

    Energy Technology Data Exchange (ETDEWEB)

    Genel, K. [Sakarya Univ., Adapazari (Turkey). Mech. Eng. Dept.; Demirkol, M.; Guelmez, T. [Faculty of Mechanical Engineering, Istanbul Technical University, Guemuessuyu, 80191, Istanbul (Turkey)

    2000-08-31

    Machine components suffer from corrosion degradation of fatigue characteristics and improvement can be attained by the application of a nitriding treatment, particularly to low alloy steels. In the present study, the effect of ion nitriding on corrosion fatigue performance of AISI 4140 steel has been investigated by conducting a series of rotary bending corrosion fatigue tests at 95 Hz, in 3% NaCl aqueous solution. Hourglass shaped, 4 mm diameter fatigue specimens were ion nitrided at 748 K for 1, 3, 8 and 16 h prior to the tests. It was observed that distinct fatigue limit behaviour of ion nitrided steel in air completely disappeared in corrosive environment besides severe degradation in fatigue characteristics. An improvement reaching to 60% in corrosion fatigue strength can be attained by successive ion nitriding practice based on a fatigue life of 10{sup 7} cycles. An attempt was made to establish an empirical relationship between corrosion fatigue strength and relative case depth, which considers the size of the ion nitrided specimen. It was also determined that a power relationship holds between corrosion fatigue strength and fatigue life of ion nitrided steel. The presence of white layer has resulted in additional improvement in corrosion fatigue resistance, and it was observed that corrosion fatigue cracks were initiated dominantly under the white layer by pit formation mechanism. (orig.)

  3. Corrosion fatigue behaviour of ion nitrided AISI 4140 steel

    International Nuclear Information System (INIS)

    Genel, K.

    2000-01-01

    Machine components suffer from corrosion degradation of fatigue characteristics and improvement can be attained by the application of a nitriding treatment, particularly to low alloy steels. In the present study, the effect of ion nitriding on corrosion fatigue performance of AISI 4140 steel has been investigated by conducting a series of rotary bending corrosion fatigue tests at 95 Hz, in 3% NaCl aqueous solution. Hourglass shaped, 4 mm diameter fatigue specimens were ion nitrided at 748 K for 1, 3, 8 and 16 h prior to the tests. It was observed that distinct fatigue limit behaviour of ion nitrided steel in air completely disappeared in corrosive environment besides severe degradation in fatigue characteristics. An improvement reaching to 60% in corrosion fatigue strength can be attained by successive ion nitriding practice based on a fatigue life of 10 7 cycles. An attempt was made to establish an empirical relationship between corrosion fatigue strength and relative case depth, which considers the size of the ion nitrided specimen. It was also determined that a power relationship holds between corrosion fatigue strength and fatigue life of ion nitrided steel. The presence of white layer has resulted in additional improvement in corrosion fatigue resistance, and it was observed that corrosion fatigue cracks were initiated dominantly under the white layer by pit formation mechanism. (orig.)

  4. Electronic structure and mechanical properties of plasma nitrided ferrous alloys

    Science.gov (United States)

    Portolan, E.; Baumvol, I. J. R.; Figueroa, C. A.

    2009-04-01

    The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p 3/2 photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN x). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

  5. Electronic structure and mechanical properties of plasma nitrided ferrous alloys

    International Nuclear Information System (INIS)

    Portolan, E.; Baumvol, I.J.R.; Figueroa, C.A.

    2009-01-01

    The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p 3/2 photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN x ). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

  6. Characterization of plasma nitrided layers produced on sintered iron

    Directory of Open Access Journals (Sweden)

    Marcos Alves Fontes

    2014-07-01

    Full Text Available Plasma nitriding is a thermo-physical-chemical treatment process, which promotes surface hardening, caused by interstitial diffusion of atomic nitrogen into metallic alloys. In this work, this process was employed in the surface modification of a sintered ferrous alloy. Scanning electron microscopy (SEM, X-ray diffraction (XRD analyses, and wear and microhardness tests were performed on the samples submitted to ferrox treatment and plasma nitriding carried out under different conditions of time and temperature. The results showed that the nitride layer thickness is higher for all nitrided samples than for ferrox treated samples, and this layer thickness increases with nitriding time and temperature, and temperature is a more significant variable. The XRD analysis showed that the nitrided layer, for all samples, near the surface consists in a mixture of γ′-Fe4N and ɛ-Fe3N phases. Both wear resistance and microhardness increase with nitriding time and temperature, and temperature influences both the characteristics the most.

  7. Anti corrosion layer for stainless steel in molten carbonate fuel cell - comprises phase vapour deposition of titanium nitride, aluminium nitride or chromium nitride layer then oxidising layer in molten carbonate electrolyte

    DEFF Research Database (Denmark)

    2000-01-01

    Forming an anticorrosion protective layer on a stainless steel surface used in a molten carbonate fuel cell (MCFC) - comprises the phase vapour deposition (PVD) of a layer comprising at least one of titanium nitride, aluminium nitride or chromium nitride and then forming a protective layer in situ...

  8. Nanoscratch characterization of indium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Lian, Derming [Chin-Yi Univ. of Technology, Taichung, Taiwan (China). Dept. of Mechanical Engineering

    2014-01-15

    In this study we used RF plasma-assisted molecular beam epitaxy for the epitaxial growth of single-crystalline indium nitride (InN) thin films on aluminum nitride buffer layers/Si (111) substrates. We then used scratch techniques to study the influence of the c-axis orientation of the InN films and the beam interactions on the tribological performance of these samples. When grown at 440, 470, and 500 C, the coefficients of friction were 0.18, 0.22, and 0.26, respectively, under a normal force (F{sub n}) of 2000 {mu}N; 0.19, 0.23, and 0.27, respectively, under a value of Fn of 4000 {mu}N; and 0.21, 0.24, and 0.28, respectively, under a value of F{sub n} of 6000 {mu}N. These measured values increased slightly upon increasing the growth temperature because of the resulting smaller sizes of the apertures and/or pores in the inner films. The sliding resistance of the ploughed area was observed. The contact sliding line became increasingly noticeable upon increasing the value of F{sub n}; the plot of the friction with respect to the penetration depth revealed a significant relation in its adhesion properties presentation. (orig.)

  9. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    International Nuclear Information System (INIS)

    Bhattacharya, Barnali; Sarkar, Utpal

    2016-01-01

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  10. Stable boron nitride diamondoids as nanoscale materials

    International Nuclear Information System (INIS)

    Fyta, Maria

    2014-01-01

    We predict the stability of diamondoids made up of boron and nitrogen instead of carbon atoms. The results are based on quantum-mechanical calculations within density functional theory (DFT) and show some very distinct features compared to the regular carbon-based diamondoids. These features are evaluated with respect to the energetics and electronic properties of the boron nitride diamondoids as compared to the respective properties of the carbon-based diamondoids. We find that BN-diamondoids are overall more stable than their respective C-diamondoid counterparts. The electronic band-gaps (E g ) of the former are overall lower than those for the latter nanostructures but do not show a very distinct trend with their size. Contrary to the lower C-diamondoids, the BN-diamondoids are semiconducting and show a depletion of charge on the nitrogen site. Their differences in the distribution of the molecular orbitals, compared to their carbon-based counterparts, offer additional bonding and functionalization possibilities. These tiny BN-based nanostructures could potentially be used as nanobuilding blocks complementing or substituting the C-diamondoids, based on the desired properties. An experimental realization of boron nitride diamondoids remains to show their feasibility. (paper)

  11. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Barnali; Sarkar, Utpal, E-mail: utpalchemiitkgp@yahoo.com

    2016-10-20

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  12. TiO2 effect on break-down of low-grade tantalum-niobium concentrates in the process of sulphatization

    International Nuclear Information System (INIS)

    Petrova, N.V.; Popov, A.D.; Mulenko, V.N.

    1982-01-01

    The effect of TiO 2 additive or materials containing it on tantalum-niobate decomposition in the process of sulphatization is investigated. It is shown that favourable effect of titanium dioxide in the process of sulphatization is especially noticeable in reprocessing of hard-brokening down tantalum-niobium concentrates with low Nb:Ta ratio etc. Chemical composition and type of tantalum-niobium mineralization of enrichment products used in the given investigation is presented. It is stated that the degree of concentrate break-down under similar sulphatization conditions (t=230 deg C; tau=2 h) essentially depends on the quantity of the introduced titanium dioxide. It is shown that sulphatization in the presence of titanium dioxide additive or materials containing it permits to exercise practically complete break-down of lean tantalum-niobium raw material, to avoid application of complexers in leaching of sulphatization products

  13. Texture evolution in upset-forged P/M and wrought tantalum: Experimentation and modeling

    International Nuclear Information System (INIS)

    Bingert, J.F.; Desch, P.B.; Bingert, S.R.; Maudlin, P.J.; Tome, C.N.

    1997-11-01

    Preferred orientations in polycrystalline materials can significantly affect their physical and mechanical response through the retention of anisotropic properties inherent to the single crystal. In this study the texture evolution in upset-forged PIM and wrought tantalum was measured as a function of initial texture, compressive strain, and relative position in the pressing. A / duplex fiber texture parallel to the compression axis was generally observed, with varying degrees of a radial component evident in the wrought material. The development of deformation textures derives from restricted crystallographic slip conditions that generate lattice rotations, and these grain reorientations can be modeled as a function of the prescribed deformation gradient. Texture development was simulated for equivalent deformations using both a modified Taylor approach and a viscoplastic self-consistent (VPSC) model. A comparison between the predicted evolution and experimental results shows a good correlation with the texture components, but an overly sharp prediction at large strains from both the Taylor and VPSC models

  14. Study on the property of low friction complex graphite-like coating containing tantalum

    Science.gov (United States)

    Wang, Zuoping; Feng, Lajun; Shen, Wenning

    2018-03-01

    In order to enhance equipment lifetime under low oil or even dry conditions, tantalum was introduced into the graphite-like coating (GLC) by sputtering mosaic targets. The results showed that the introduction of Ta obviously reduced the friction coefficient and hardness of the GLC, while improved the wearability. When the atomic percentage of Ta was larger than 3%, the steady friction coefficient was lower than 0.01, suggesting the coating exhibited super lubricity. When the content of Ta was about 5.0%, the average friction coefficient was 0.02 by a sliding friction test under load of 20 N in unlubricated condition. Its average friction coefficient reduced by 75%, compared with that of control GLC (0.0825).

  15. Investigation and modeling of the anomalous yield point phenomenon in pure tantalum

    Energy Technology Data Exchange (ETDEWEB)

    Colas, D. [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 5209 CNRS, Université de Bourgogne, 9 avenue Alain Savary, BP 17870, 21078 Dijon Cedex (France); CEA Valduc, 21120 Is-sur-Tille (France); Mines ParisTech, Centre des Matériaux, CNRS, UMR 7633, BP 87, 91003 Evry Cedex (France); Finot, E. [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 5209 CNRS, Université de Bourgogne, 9 avenue Alain Savary, BP 17870, 21078 Dijon Cedex (France); Flouriot, S. [CEA Valduc, 21120 Is-sur-Tille (France); Forest, S. [Mines ParisTech, Centre des Matériaux, CNRS, UMR 7633, BP 87, 91003 Evry Cedex (France); Mazière, M., E-mail: matthieu.maziere@mines-paristech.fr [Mines ParisTech, Centre des Matériaux, CNRS, UMR 7633, BP 87, 91003 Evry Cedex (France); Paris, T. [CEA Valduc, 21120 Is-sur-Tille (France)

    2014-10-06

    The monotonic and cyclic behavior of commercially pure tantalum has been investigated at room temperature, in order to capture and understand the occurrence of the anomalous yield point phenomenon. Interrupted tests have been performed, with strain reversals (tensile or compressive loading) after an aging period. The stress drop is attributed to the interactions between dislocations and solute atoms (oxygen) and its macroscopic occurrence is not systematically observed. InfraRed Thermography (IRT) measurements supported by Scanning Electron Microscopy (SEM) pictures of the polished gauge length of a specimen during an interrupted tensile test reveal the nucleation and propagation of a strain localization band. The KEMC (Kubin–Estrin–McCormick) phenomenological model accounting for strain aging has been identified for several loadings and strain rates at room temperature. Simulations on full specimen using the KEMC model do not show strain localization, because of the competition between viscosity and strain localization. However, a slight misalignment of the sample can promote strain localization.

  16. Variability in dynamic properties of tantalum : spall, attenuation and load/unload.

    Energy Technology Data Exchange (ETDEWEB)

    Furnish, Michael David; Reinhart, William Dodd; Trott, Wayne Merle; Vogler, Tracy John; Chhabildas, Lalit Chandra

    2005-07-01

    A suite of impact experiments was conducted to assess spatial and shot-to-shot variability in dynamic properties of tantalum. Samples had a uniform refined {approx}20 micron grain structure with a strong axisymmetric [111] crystallographic texture. Two experiments performed with sapphire windows (stresses of approximately 7 and 12 GPa) clearly showed elastic-plastic loading and slightly hysteretic unloading behavior. An HEL amplitude of 2.8 GPa (corresponding to Y 1.5 GPa) was observed. Free-surface spall experiments showed clear wave attenuation and spallation phenomena. Here, loading stresses were {approx} 12.5 GPa and various ratios of impactor to target thicknesses were used. Spatial and shot-to-shot variability of the spall strength was {+-} 20%, and of the HEL, {+-} 10%. Experiments conducted with smaller diameter flyer plates clearly showed edge effects in the line and point VISAR records, indicating lateral release speeds of roughly 5 km/s.

  17. Spatial and temporal changes in the morphology of preosteoblastic cells seeded on microstructured tantalum surfaces

    DEFF Research Database (Denmark)

    Justesen, Jørn; Lorentzen, M.; Andersen, L. K.

    2009-01-01

    It has been widely reported that surface morphology on the micrometer scale affects cell function as well as cell shape. In this study, we have systematically compared the influence of 13 topographically micropatterned tantalum surfaces on the temporal development of morphology, including spreading......, and length of preosteoblastic cells (MC3T3-E1). Cells were examined after 0.5, 1, 4, and 24 h on different Ta microstructures with vertical dimensions (heights) of 0.25 and 1.6 mu m. Cell morphologies depended upon the underlying Surface topography, and the length and spreading of cells varied as a function...... to depend on the distance between the pillars with one specific pillar Structure exhibiting a decreased spreading combined with a radical change in morphology of the cells. Interestingly, this morphology on the particular pillar structure was associated with a markedly different distribution of the actio...

  18. Comparative study of tantalum deposition by chemical vapor deposition and electron beam vacuum evaporation

    International Nuclear Information System (INIS)

    Spitz, J.; Chevallier, J.

    1975-01-01

    The coating by tantalum of steel parts has been carried out by the two following methods: chemical vapor deposition by hydrogen reduction of TaCl 5 (temperature=1100 deg C, pressure=200 mmHg, H 2 /TaCl 5 =10); electron beam vacuum evaporation. In this case Ta was firstly condensed by ion plating (P(Ar)=5x10 -3 up to 2x10 -2 mmHg; U(c)=3 to -4kV and J(c)=0.2 to 1mAcm -2 ) in order to ensure a good adhesion between deposit and substrate; then by vacuum condensation (substrate temperature: 300 to 650 deg C) to ensure that the coating is impervious to HCl an H 2 SO 4 acids. The advantages and inconveniences of each method are discussed [fr

  19. High temperature thermodynamics of solutions of oxygen in vanadium, niobium and tantalum

    International Nuclear Information System (INIS)

    Boureau, G.; Gerdanian, P.

    1981-01-01

    The Tian-Calvet microcalorimetric method has been applied to the determination at 1323 K of ΔH(O 2 ), the partial molar enthalpy of mixing of oxygen in vanadium, niobium and tantalum. The present results are in good agreement with earlier studies using e.m.f. techniques. Nevertheless in the first two solutions, ΔH(O 2 ) has been found somewhat more negative than previously reported. The partial molar entropies of mixing have been recalculated. The low values of the excess entropies are explained by a strong increase of the Debye temperature and a decrease of the electronic density of states at the Fermi level as the oxygen content increases. (author)

  20. Sound velocity of tantalum under shock compression in the 18–142 GPa range

    Energy Technology Data Exchange (ETDEWEB)

    Xi, Feng, E-mail: xifeng@caep.cn; Jin, Ke; Cai, Lingcang, E-mail: cai-lingcang@aliyun.com; Geng, Huayun; Tan, Ye; Li, Jun [National Key Laboratory of Shock Waves and Detonation Physics, Institute of Fluid Physics, CAEP, P.O. Box 919-102 Mianyang, Sichuan 621999 (China)

    2015-05-14

    Dynamic compression experiments of tantalum (Ta) within a shock pressure range from 18–142 GPa were conducted driven by explosive, a two-stage light gas gun, and a powder gun, respectively. The time-resolved Ta/LiF (lithium fluoride) interface velocity profiles were recorded with a displacement interferometer system for any reflector. Sound velocities of Ta were obtained from the peak state time duration measurements with the step-sample technique and the direct-reverse impact technique. The uncertainty of measured sound velocities were analyzed carefully, which suggests that the symmetrical impact method with step-samples is more accurate for sound velocity measurement, and the most important parameter in this type experiment is the accurate sample/window particle velocity profile, especially the accurate peak state time duration. From these carefully analyzed sound velocity data, no evidence of a phase transition was found up to the shock melting pressure of Ta.

  1. Examination of the damage and failure response of tantalum and copper under varied shock loading conditions

    Energy Technology Data Exchange (ETDEWEB)

    Bronkhorst, Curt A [Los Alamos National Laboratory; Dennis - Koller, Darcie [Los Alamos National Laboratory; Cerreta, Ellen K [Los Alamos National Laboratory; Gray Ill, George T [Los Alamos National Laboratory; Bourne, Neil [AWE-ALDERMASTON

    2010-12-16

    A number of plate impact experiments have been conducted on high purity polycrystalline tantalum and copper samples using graded flyer plate configurations to alter the loading profile. These experiments are designed in a way so that a broad range of damage regimes are probed. The results show that the nucleation of damage primarily occurs at the grain boundaries of the materials. This affords us the opportunity to propose a porosity damage nucleation criterion which begins to account for the length scales of the microstructure (grain size distribution) and the mechanical response of the grain boundary regions (failure stress distribution). This is done in the context of a G-T-N type model for the ductile damage and failure response of both the materials examined. The role of micro-inertial effects on the porosity growth process is also considered.

  2. Corrosion resistance and cytocompatibility of tantalum-surface-functionalized biomedical ZK60 Mg alloy

    International Nuclear Information System (INIS)

    Jin, Weihong; Wang, Guomin; Lin, Zhengjie; Feng, Hongqing; Li, Wan; Peng, Xiang; Qasim, Abdul Mateen; Chu, Paul K.

    2017-01-01

    Highlights: • Films comprising Ta_2O_5, Ta suboxide, and Ta are sputter-deposited on ZK60 Mg alloy. • The Ta-containing film significantly mitigates degradation of ZK60. • The modified ZK60 exhibits notably enhanced cell adhesion and proliferation. - Abstract: Tantalum (Ta) is introduced to the surface of the ZK60 Mg alloy by reactive magnetron sputtering to enhance the corrosion resistance and cytocompatibility. The film thickness and composition, corrosion behavior, and cytocompatibility are studied by various techniques systematically. The surface layer composed of Ta_2O_5, Ta suboxide, and Ta increases the corrosion resistance of ZK60 while simultaneously improving cell attachment, spreading, and proliferation in vitro. The enhancement mechanism is proposed and discussed.

  3. Experimental investigation into the crack propagation in multiphase tantalum carbide ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, Bradford C. [Department of Metallurgical & Materials Engineering, The University of Alabama, 301 7th Avenue, 116 Houser Hall, Tuscaloosa, AL 35487-0202 (United States); Lee, HeeDong; Mogilevsky, Pavel [UES, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432-1894 (United States); Weinberger, Christopher R. [Department of Mechanical Engineering, Colorado State University, 1374 Campus Delivery, Fort Collins, CO 80523 (United States); Parthasarathy, Triplicane A. [UES, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432-1894 (United States); Matson, Lawrence E. [Air Force Research Laboratory Materials & Manufacturing Directorate, Structural Material Division (AFRL/RXLN), 2230 Tenth St., Wright-Patterson AFB, OH 4543307817 (United States); Smith, Chase [Department of Metallurgical & Materials Engineering, The University of Alabama, 301 7th Avenue, 116 Houser Hall, Tuscaloosa, AL 35487-0202 (United States); Thompson, Gregory B., E-mail: gthompson@eng.ua.edu [Department of Metallurgical & Materials Engineering, The University of Alabama, 301 7th Avenue, 116 Houser Hall, Tuscaloosa, AL 35487-0202 (United States)

    2017-05-17

    Tantalum carbide ceramics with high volume fractions of the ζ-Ta{sub 4}C{sub 3} phase have been shown to exhibit high fracture strength and toughness as compared to those in absence of this phase. In this work, we investigated how microcracks propagated in this these high toughness ceramics using Knoop and Vickers microindentation. The Knoop indentations demonstrated that cracking preferentially occurred parallel to the lath structure in ζ-Ta{sub 4}C{sub 3}; however shorter cracks did form between the laths when a sufficient driving force was present. The resulting crack path was tortuous providing direct evidence for toughening through crack deflection; however, the microscale nature of the work cannot rule out crack bridging as a toughening mechanism as well. Plasticity is also observed under the indents, but is likely a result of the high confining pressures that occurred during indentation allowing for plastic flow.

  4. III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

    International Nuclear Information System (INIS)

    Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

    1984-01-01

    Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

  5. Attractive short-range interatomic potential in the lattice dynamics of niobium and tantalum

    International Nuclear Information System (INIS)

    Onwuagba, B.N.; Pal, S.

    1987-01-01

    It is shown in the framework of the pseudopotential approach that there is a sizable attractive short-range component of the interatomic potential due to the s-d interaction which has the same functional form in real space as the Born-Mayer repulsion due to the overlap of core electron wave functions centred on neighbouring ions. The magnitude of this attractive component is such as to completely cancel the conventional Born-Mayer repulsion, making the resultant short-range interatomic potential attractive rather than repulsive. Numerical calculations show that the attractive interatomics potential, which represents the local-field correction, leads to a better understanding of the occurrence of the soft modes in the phonon dispersion curves of niobium and tantalum

  6. Experimental and Theoretical Studies on Corrosion Inhibition of Niobium and Tantalum Surfaces by Carboxylated Graphene Oxide

    Directory of Open Access Journals (Sweden)

    Valbonë Mehmeti

    2018-05-01

    Full Text Available The corrosion of two different metals, niobium and tantalum, in aqueous sulfuric acid solution has been studied in the presence and absence of carboxylated graphene oxide. Potentiodynamic measurements indicate that this nanomaterial inhibits corrosion due to its adsorption on the metal surfaces. The adsorbed layer of carboxylated graphene hinders two electrochemical reactions: the oxidation of the metal and the transport of metal ions from the metal to the solution but also hydrogen evolution reaction by acting as a protective barrier. The adsorption behavior at the molecular level of the carboxylated graphene oxide with respect to Nb, NbO, Ta, and TaO (111 surfaces is also investigated using Molecular Dynamic and Monte Carlo calculations.

  7. Estimation of niobium, tantalum and zirconium in a carbonate rich ore

    International Nuclear Information System (INIS)

    Navale, A.S.; Venkatakrishnan, R.R.; Sreenivas, T.

    2013-01-01

    Tantalum, niobium and zirconium form refractory compounds and therefore pose problems in estimation by methods like spectrophotometry, AAS etc. Their estimation is best carried out with ICP-OES as the plasma is capable of breaking the refractory compounds and releases these elements in the form of excited atoms. But another major problem is bringing these elements in solution as they require very strong reagents and tend to hydrolyze easily in solution. Complexing agents need to be added to maintain these elements in dissolved condition. The commonly employed dissolution techniques for these elements are fusion with potassium pyrosulfate (for Nb and Ta), sodium hydroxide or peroxide (for zirconium). Digestion with mineral acids in combination with hydrofluoric acid is also employed

  8. Shear-induced anisotropic plastic flow from body-centred-cubic tantalum before melting

    Science.gov (United States)

    Wu, Christine J.; Söderlind, Per; Glosli, James N.; Klepeis, John E.

    2009-03-01

    There are many structural and optical similarities between a liquid and a plastic flow. Thus, it is non-trivial to distinguish between them at high pressures and temperatures, and a detailed description of the transformation between these phenomena is crucial to our understanding of the melting of metals at high pressures. Here we report a shear-induced, partially disordered viscous plastic flow from body-centred-cubic tantalum under heating before it melts into a liquid. This thermally activated structural transformation produces a unique, one-dimensional structure analogous to a liquid crystal with the rheological characteristics of Bingham plastics. This mechanism is not specific to Ta and is expected to hold more generally for other metals. Remarkably, this transition is fully consistent with the previously reported anomalously low-temperature melting curve and thus offers a plausible resolution to a long-standing controversy about melting of metals under high pressures.

  9. [(≡SiO)TaV (=CH2)Cl2], the first tantalum methylidene species prepared and identified on the silica surface

    KAUST Repository

    Chen, Yin

    2013-11-01

    A novel surface tantalum methylidene [(≡SiO)TaV (=CH 2)Cl2] was obtained via thermal decomposition of the well-defined surface species [(≡SiO)TaVCl2Me 2]. This first surface tantalum methylidene ever synthesized has been fully characterized and the kinetics of the a-hydrogen abstraction reaction has also been investigated in the heterogeneous system. © 2013 Elsevier B.V. All rights reserved.

  10. [(≡SiO)TaV (=CH2)Cl2], the first tantalum methylidene species prepared and identified on the silica surface

    KAUST Repository

    Chen, Yin; Callens, Emmanuel; Abou-Hamad, Edy; Basset, Jean-Marie

    2013-01-01

    A novel surface tantalum methylidene [(≡SiO)TaV (=CH 2)Cl2] was obtained via thermal decomposition of the well-defined surface species [(≡SiO)TaVCl2Me 2]. This first surface tantalum methylidene ever synthesized has been fully characterized and the kinetics of the a-hydrogen abstraction reaction has also been investigated in the heterogeneous system. © 2013 Elsevier B.V. All rights reserved.

  11. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  12. Method of production of hollow silicon nitride articles

    International Nuclear Information System (INIS)

    Parr, N.L.; Brown, R.L.

    1971-01-01

    The hollow articles prepared according to the invention have a high density, exhibit no internal stresses and correspond to high demands of tolerance and surface quality. One obtains these by flame spraying silicon powder on a pre-heated form designed with separating agent - e.g. NaCl. After removing the form, the silicon is nitridated to silicon nitride by heating in N 2 or in an atmosphere of ammonia. This process can be interrupted if the article is also to be mechanically processed, and then the nitridation can be completed. (Hoe/LH) [de

  13. Critical fields of niobium nitride films of various granularity

    International Nuclear Information System (INIS)

    Antonova, E.A.; Sukhov, V.A.

    1983-01-01

    The behaviour of lattice parameter, specific electrical resistivity, critical temperature, and temperature dependence of upper critical field near Tsub(cr) of sputtered niobium nitride films is investigated versus the substrate temperature and gas mixture composition in the process of reactive cathode sputtering. The relation between extrapolated value of the upper critical field and granularity of niobium nitride films, close as to composition to the stoichiometric one, has been found. Values of the kappa parameter of the Ginsburg-Landau theory and of the coherence length for niobium nitride films of various granularity are estimated in an approximation of uniform distribution of impurities in a sample

  14. Conductive and robust nitride buffer layers on biaxially textured substrates

    Science.gov (United States)

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  15. Composition dependence of the kinetics and mechanisms of thermal oxidation of titanium-tantalum alloys

    International Nuclear Information System (INIS)

    Park, Y.S.; Butt, D.P.

    1999-01-01

    The oxidation behavior of titanium-tantalum alloys was investigated with respective concentrations of each element ranging from 0 to 100 wt.%. Alloys were exposed to argon-20% oxygen at 800 to 1400 C. The slowest oxidation rates were observed in alloys with 5--20% Ta. The oxidation kinetics of alloys containing less than approximately 40% Ta were approximately parabolic. Pure Ta exhibited nearly linear kinetics. Alloys containing 50% or more Ta exhibited paralinear kinetics. The activation energies for oxidation ranged between 232 kJ/mole for pure Ti and 119 kJ/mole for pure Ta, with the activation energies of the alloys falling between these values and generally decreasing with increasing Ta content. The activation energies for oxidation of the end members, Ti and Ta, agree well with published values for the activation energies for diffusion of oxygen in α-Ti and Ta. Scale formation in the alloys was found to be complex exhibiting various layers of Ti-, Ta-, and TiTa-oxides. The outermost layer of the oxidized alloys was predominantly rutile (TiO 2 ). Beneath the TiO 2 grew a variety of other oxides with the Ta content generally increasing with proximity to the metal-oxide interface. It was found that the most oxidation-resistant alloys had compositions falling between Ti-5Ta and Ti-15Ta. Although Ta stabilizes the β-phase of Ti, the kinetics of oxidation appeared to be rate limited by oxygen transport through the oxygen-stabilized α-phase. However, the kinetics are complicated by the formation of a complex oxide, which cracks periodically. Tantalum appears to increase the compositional range of oxygen-stabilized α-phase and reduces both the solubility of oxygen and diffusivity of Ti in the α- and β-phases

  16. Fabrication and characterization of powder metallurgy tantalum components prepared by high compaction pressure technique

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Youngmoo [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141 (Korea, Republic of); Agency for Defense Development, Yuseong, P.O. Box 35, Yuseong-gu, Daejeon 34186, Republic of Korea. (Korea, Republic of); Lee, Dongju [Korea Atomic Energy Research Institute, 111 Daedeok-daero, Yuseong-gu, Daejeon 34057 (Korea, Republic of); Hwang, Jaewon [Samsung Electronics, 129 Samsung-ro, Youngtong-gu, Suwon 16677 (Korea, Republic of); Ryu, Ho Jin, E-mail: hojinryu@kaist.ac.kr [Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141 (Korea, Republic of); Hong, Soon Hyung, E-mail: shhong@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141 (Korea, Republic of)

    2016-04-15

    The present study has investigated the consolidation behaviors of tantalum powders during compaction and sintering, and the characteristics of sintered components. For die compaction, the densification behaviors of the powders are simulated by finite element analyses based on the yield function proposed by Shima and Oyane. Accordingly, the green density distribution for coarser particles is predicted to be more uniform because they exhibits higher initial relative tap density owing to lower interparticle friction. It is also found that cold isostatic pressing is capable of producing higher dense compacts compared to the die pressing. However, unlike the compaction behavior, the sintered density of smaller particles is found to be higher than those of coarser ones owing to their higher specific surface area. The maximum sintered density was found to be 0.96 of theoretical density where smaller particles were pressed isostatically at 400 MPa followed by sintering at 2000 °C. Moreover, the effects of processing conditions on grain size and texture were also investigated. The average grain size of the sintered specimen is 30.29 μm and its texture is less than 2 times random intensity. Consequently, it is concluded that the higher pressure compaction technique is beneficial to produce high dense and texture-free tantalum components compared to hot pressing and spark plasma sintering. - Highlights: • Higher Ta density is obtained from higher pressure and sintering temperature. • High compaction method enables P/M Ta to achieve the density of 16.00 g·cm{sup −3}. • A P/M Ta component with fine microstructure and random orientation is developed.

  17. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D., E-mail: daniel.cristea@unitbv.ro [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Cretu, N. [Electrical Engineering and Applied Physics Department, Transilvania University, 500036 Brasov (Romania); Borges, J. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Lopes, C.; Cunha, L. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Ion, V.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, “Photonic Processing of Advanced Materials” Group, PO Box MG-16, RO 77125 Magurele-Bucharest (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, 21 Avenue Jean Capelle, 69621 Villeurbanne cedex (France); Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania)

    2015-11-01

    Highlights: • Tantalum oxynitride thin films have been deposited by magnetron sputtering, in various configurations. • The rising of the reactive gases mixture flow has the consequence of a gradual increase in the non-metallic content in the films, which results in a 10 orders of magnitude resistivity domain. • The higher resistivity films exhibit dielectric constants up to 41 and quality factors up to 70. - Abstract: The main purpose of this work is to present and to interpret the change of electrical properties of Ta{sub x}N{sub y}O{sub z} thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N{sub 2} and O{sub 2}, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, −50 V or −100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance Ta{sub x}N{sub y}O{sub z} films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric Ta{sub x}N{sub y}O{sub z} films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

  18. Synthesis of chemical vapor deposition graphene on tantalum wire for supercapacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Guo, Wenlong [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji, E-mail: hongjili@yeah.net [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Xu, Sheng [School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China); Qu, Changqing; Yang, Baohe [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2014-10-30

    Highlights: • The capacitance of graphene/tantalum (Ta) wire electrodes is firstly reported. • Graphene was grown on the Ta surface by hot-filament chemical vapor deposition. • Graphene/Ta wire structure is favorable for fast ion and electron transfer. • The graphene/Ta wire electrode shows high capacitive properties. - Abstract: This paper studies the synthesis and electrochemical characterization of graphene/tantalum (Ta) wires as high-performance electrode material for supercapacitors. Graphene on Ta wires is prepared by the thermal decomposition of methane under various conditions. The graphene nanosheets on the Ta wire surface have an average thickness of 1.3–3.4 nm and consist typically of a few graphene monolayers, and TaC buffer layers form between the graphene and Ta wire. A capacitor structure is fabricated using graphene/Ta wire with a length of 10 mm and a diameter of 0.6 mm as the anode and Pt wire of the same size as the cathode. The electrochemical behavior of the graphene/Ta wires as supercapacitor electrodes is characterized by cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy in 1 M Na{sub 2}SO{sub 4} aqueous electrolyte. The as-prepared graphene/Ta electrode has highest capacitance of 345.5 F g{sup −1} at current density of 0.5 A g{sup −1}. The capacitance remains at about 84% after 1000 cycles at 10 A g{sup −1}. The good electrochemical performance of the graphene/Ta wire electrode is attributed to the unique nanostructural configuration, high electrical conductivity, and large specific surface area of the graphene layer. This suggests that graphene/Ta wire electrode materials have potential applications in high-performance energy storage devices.

  19. Synthesis of chemical vapor deposition graphene on tantalum wire for supercapacitor applications

    International Nuclear Information System (INIS)

    Li, Mingji; Guo, Wenlong; Li, Hongji; Xu, Sheng; Qu, Changqing; Yang, Baohe

    2014-01-01

    Highlights: • The capacitance of graphene/tantalum (Ta) wire electrodes is firstly reported. • Graphene was grown on the Ta surface by hot-filament chemical vapor deposition. • Graphene/Ta wire structure is favorable for fast ion and electron transfer. • The graphene/Ta wire electrode shows high capacitive properties. - Abstract: This paper studies the synthesis and electrochemical characterization of graphene/tantalum (Ta) wires as high-performance electrode material for supercapacitors. Graphene on Ta wires is prepared by the thermal decomposition of methane under various conditions. The graphene nanosheets on the Ta wire surface have an average thickness of 1.3–3.4 nm and consist typically of a few graphene monolayers, and TaC buffer layers form between the graphene and Ta wire. A capacitor structure is fabricated using graphene/Ta wire with a length of 10 mm and a diameter of 0.6 mm as the anode and Pt wire of the same size as the cathode. The electrochemical behavior of the graphene/Ta wires as supercapacitor electrodes is characterized by cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy in 1 M Na 2 SO 4 aqueous electrolyte. The as-prepared graphene/Ta electrode has highest capacitance of 345.5 F g −1 at current density of 0.5 A g −1 . The capacitance remains at about 84% after 1000 cycles at 10 A g −1 . The good electrochemical performance of the graphene/Ta wire electrode is attributed to the unique nanostructural configuration, high electrical conductivity, and large specific surface area of the graphene layer. This suggests that graphene/Ta wire electrode materials have potential applications in high-performance energy storage devices

  20. Characteristics of Au/PZT/TiO2/Nitride/Si structure capacitors with ICP nitride treatments

    International Nuclear Information System (INIS)

    Min, Hyung Seob; Kim, Tae Ho; Jeon, Chang Bae; Lee, Jae Gab; Kim, Ji Young

    2002-01-01

    In this study, the characteristics of PZT/TiO 2 ferroelectric gate stack capacitors with Inductively Coupled Plasma (ICP) nitridation were investigated for field effect transistor (FET)-type Ferroelectric Random Access Memory (FeRAM) applications. If a high accumulation capacitance is to be had, the ICP nitridation time needs to be optimized. While a short ICP treatment time results in thermal oxide growth due to lack of nitrogen, a long nitridation time causes a nitride layer which is too thick. Au/PZT(200 nm)/TiO 2 (40 nm)/Nitride/Si (MeFINS) structure capacitors show a memory window (ΔV) of 1.6 V under ±3-V operation while Au/PZT(200 nm)/TiO 2 (40 nm)/Si (MeFIS) capacitors without nitride treatment exhibit a small memory window of 0.6 V. At the same time, the capacitance of the MeFINS device is almost twice that of the MeFIS capacitor. This result implies that the ICP nitride treatment suppresses the formation of a low dielectric constant interfacial SiO x layer and alleviates the series capacitance problem

  1. Sol–gel synthesis of tantalum oxide and phosphonic acid-modified carbon nanotubes composite coatings on titanium surfaces

    International Nuclear Information System (INIS)

    Maho, Anthony; Detriche, Simon; Delhalle, Joseph; Mekhalif, Zineb

    2013-01-01

    Carbon nanotubes used as fillers in composite materials are more and more appreciated for the outstanding range of accessible properties and functionalities they generate in numerous domains of nanotechnologies. In the framework of biological and medical sciences, and particularly for orthopedic applications and devices (prostheses, implants, surgical instruments, …), titanium substrates covered by tantalum oxide/carbon nanotube composite coatings have proved to constitute interesting and successful platforms for the conception of solid and biocompatible biomaterials inducing the osseous regeneration processes (hydroxyapatite growth, osteoblasts attachment). This paper describes an original strategy for the conception of resistant and homogeneous tantalum oxide/carbon nanotubes layers on titanium through the introduction of carbon nanotubes functionalized by phosphonic acid moieties (-P(=O)(OH) 2 ). Strong covalent C-P bonds are specifically inserted on their external sidewalls with a ratio of two phosphonic groups per anchoring point. Experimental results highlight the stronger “tantalum capture agent” effect of phosphonic-modified nanotubes during the sol–gel formation process of the deposits compared to nanotubes bearing oxidized functions (-OH, -C=O, -C(=O)OH). Particular attention is also paid to the relative impact of the rate of functionalization and the dispersion degree of the carbon nanotubes in the coatings, as well as their wrapping level by the tantalum oxide matrix material. The resulting effect on the in vitro growth of hydroxyapatite is also evaluated to confirm the primary osseous bioactivity of those materials. Chemical, structural and morphological features of the different composite deposits described herein are assessed by X-ray photoelectron spectroscopy (XPS), scanning (SEM) and transmission (TEM) electronic microscopies, energy dispersive X-rays analysis (EDX) and peeling tests. Highlights: ► Formation of tantalum/carbon nanotube

  2. Sol–gel synthesis of tantalum oxide and phosphonic acid-modified carbon nanotubes composite coatings on titanium surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Maho, Anthony [Laboratory of Chemistry and Electrochemistry of Surfaces, University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Fonds pour la Formation à la Recherche dans l' Industrie et dans l' Agriculture (FRIA), Rue d' Egmont 5, B-1000 Bruxelles (Belgium); Detriche, Simon; Delhalle, Joseph [Laboratory of Chemistry and Electrochemistry of Surfaces, University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Mekhalif, Zineb, E-mail: zineb.mekhalif@fundp.ac.be [Laboratory of Chemistry and Electrochemistry of Surfaces, University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium)

    2013-07-01

    Carbon nanotubes used as fillers in composite materials are more and more appreciated for the outstanding range of accessible properties and functionalities they generate in numerous domains of nanotechnologies. In the framework of biological and medical sciences, and particularly for orthopedic applications and devices (prostheses, implants, surgical instruments, …), titanium substrates covered by tantalum oxide/carbon nanotube composite coatings have proved to constitute interesting and successful platforms for the conception of solid and biocompatible biomaterials inducing the osseous regeneration processes (hydroxyapatite growth, osteoblasts attachment). This paper describes an original strategy for the conception of resistant and homogeneous tantalum oxide/carbon nanotubes layers on titanium through the introduction of carbon nanotubes functionalized by phosphonic acid moieties (-P(=O)(OH){sub 2}). Strong covalent C-P bonds are specifically inserted on their external sidewalls with a ratio of two phosphonic groups per anchoring point. Experimental results highlight the stronger “tantalum capture agent” effect of phosphonic-modified nanotubes during the sol–gel formation process of the deposits compared to nanotubes bearing oxidized functions (-OH, -C=O, -C(=O)OH). Particular attention is also paid to the relative impact of the rate of functionalization and the dispersion degree of the carbon nanotubes in the coatings, as well as their wrapping level by the tantalum oxide matrix material. The resulting effect on the in vitro growth of hydroxyapatite is also evaluated to confirm the primary osseous bioactivity of those materials. Chemical, structural and morphological features of the different composite deposits described herein are assessed by X-ray photoelectron spectroscopy (XPS), scanning (SEM) and transmission (TEM) electronic microscopies, energy dispersive X-rays analysis (EDX) and peeling tests. Highlights: ► Formation of tantalum

  3. The physicochemical/biological properties of porous tantalum and the potential surface modification techniques to improve its clinical application in dental implantology

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yindong [State Key Laboratory of Oral Diseases, West China Hospital of Stomatology, Sichuan University, Chengdu (China); Bao, Chongyun, E-mail: cybao9933@scu.edu.cn [State Key Laboratory of Oral Diseases, West China Hospital of Stomatology, Sichuan University, Chengdu (China); Wismeijer, Daniel [Department of Oral Implantology and Prosthetic Dentistry, Academic Centre for Dentistry Amsterdam (ACTA), MOVE Research Institute Amsterdam, VU University Amsterdam and University of Amsterdam, Amsterdam (Netherlands); Wu, Gang, E-mail: g.wu@acta.nl [Department of Oral Implantology and Prosthetic Dentistry, Academic Centre for Dentistry Amsterdam (ACTA), MOVE Research Institute Amsterdam, VU University Amsterdam and University of Amsterdam, Amsterdam (Netherlands)

    2015-04-01

    More rapid restoration and more rigid functionality have been pursued for decades in the field of dental implantology. Under such motivation, porous tantalum has been recently introduced to design a novel type of dental implant. Porous tantalum bears interconnected porous structure with pore size ranging from 300 to 600 μm and a porosity of 75–85%. Its elastic modulus (1.3–10 GPa) more closely approximates that of natural cortical (12–18 GPa) and cancellous bone (0.1–0.5 GPa) in comparison with the most commonly used dental materials, such as titanium and titanium alloy (106–115 GPa). Porous tantalum is highly corrosion-resistant and biocompatible. It can significantly enhance the proliferation and differentiation of primary osteoblasts derived from elderly people than titanium. Porous tantalum can allow bone ingrowth and establish not only osseointegration but also osseoincorporation, which will significantly enhance the secondary stability of implants in bone tissue. In this review, we summarize the physicochemical, mechanical and biological properties of porous tantalum. We further discuss the performance of current tantalum dental implants and present the methodologies of surface modifications in order to improve their biological performance.

  4. The physicochemical/biological properties of porous tantalum and the potential surface modification techniques to improve its clinical application in dental implantology

    International Nuclear Information System (INIS)

    Liu, Yindong; Bao, Chongyun; Wismeijer, Daniel; Wu, Gang

    2015-01-01

    More rapid restoration and more rigid functionality have been pursued for decades in the field of dental implantology. Under such motivation, porous tantalum has been recently introduced to design a novel type of dental implant. Porous tantalum bears interconnected porous structure with pore size ranging from 300 to 600 μm and a porosity of 75–85%. Its elastic modulus (1.3–10 GPa) more closely approximates that of natural cortical (12–18 GPa) and cancellous bone (0.1–0.5 GPa) in comparison with the most commonly used dental materials, such as titanium and titanium alloy (106–115 GPa). Porous tantalum is highly corrosion-resistant and biocompatible. It can significantly enhance the proliferation and differentiation of primary osteoblasts derived from elderly people than titanium. Porous tantalum can allow bone ingrowth and establish not only osseointegration but also osseoincorporation, which will significantly enhance the secondary stability of implants in bone tissue. In this review, we summarize the physicochemical, mechanical and biological properties of porous tantalum. We further discuss the performance of current tantalum dental implants and present the methodologies of surface modifications in order to improve their biological performance

  5. Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing

    Science.gov (United States)

    Alur, Siddharth

    Gallium Nitride has been researched extensively for the past three decades for its application in Light Emitting Diodes (LED's), power devices and UV photodetectors. With the recent developments in crystal growth technology and the ability to control the doping there has been an increased interest in heterostructures formed between Gallium nitride and it's alloy Aluminium Gallium Nitride. These heterostructures due to the combined effect of spontaneous and piezoelectric effect can form a high density and a high mobility electron gas channel without any intentional doping. This high density electron gas makes these heterostructures ideal to be used as sensors. Gallium Nitride is also chemically very stable. Detection of biomolecules in a fast and reliable manner is very important in the areas of food safety and medical research. For biomolecular detection it is paramount to have a robust binding of the probes on the sensor surface. Therefore, in this dissertation, the fabrication and application of the AlGaN/GaN heterostructures as biological sensors for the detection of DNA and Organophosphate hydrolase enzyme is discussed. In order to use these AlGaN/GaN heterostructures as biological sensors capable of working in a liquid environment photodefinable polydimethyl-siloxane is used as an encapsulant. The immobilization conditions for a robust binding of thiolated DNA and the catalytic receptor enzyme organophosphate hydrolase on gold surfaces is developed with the help of X-ray photoelectron spectroscopy. DNA and OPH are detected by measuring the change in the drain current of the device as a function of time.

  6. Diagnostic of corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

    Energy Technology Data Exchange (ETDEWEB)

    Escobar, C.; Villarreal, M. [Thin Film Group, Universidad del Valle, A.A. 25360, Cali (Colombia); Caicedo, J.C., E-mail: jcaicedoangulo1@gmail.com [Powder Metallurgy and Processing of Solid Recycled Research Group, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingeniería Mecatrónica, Universidad Militar Nueva Granada, Bogotá (Colombia); Caicedo, H.H. [Department of Bioengineering, University of Illinois at Chicago, IL 60612 (United States); Department of Anatomy and Cell Biology, University of Illinois at Chicago, IL 60612 (United States); Prieto, P. [Thin Film Group, Universidad del Valle, A.A. 25360, Cali (Colombia); Center of Excellence for Novel Materials, CENM, Cali (Colombia)

    2013-10-31

    HfN/VN multilayered systems were grown on 4140 steel substrates with the aim to improve their electrochemical behavior. The multilayered coatings were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ) and the bilayer number (n) while maintaining constant the total coating thickness (∼ 1.2 μm). The coatings were characterized by X-ray diffraction (XRD), and electron microscopy. The electrochemical properties were studied by Electrochemical Impedance Spectroscopy and Tafel curves. XRD results showed preferential growth in the face-centered cubic (111) crystal structure for [HfN/VN]{sub n} multilayered coatings. The maximum corrosion resistance was obtained for coatings with (Λ) equal to 15 nm, corresponding to bilayer n = 80. Polarization resistance and corrosion rate was around 112.19 kΩ cm{sup 2} and 0.094*10{sup −3} mmy respectively; moreover, these multilayered system showed a decrease of 80% on mass loss due to the corrosive–erosive process, in relation to multilayered systems with n = 1 and Λ = 1200. HfN/VN multilayers have been designed and deposited on Si (100) and AISI 4140 steel substrates with bilayer periods (Λ) in a broad range, from nanometers to hundreds of nanometers to study the microstructural evolution and electrochemical progress with decreasing bilayer thickness. - Highlights: • Enhancements on surface electrochemical properties and response to surface corrosion attack. • Superficial phenomenon that occurs in corrosion surface of [Hf-Nitrides/V-Nitrides]n • Corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures.

  7. Diagnostic of corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

    International Nuclear Information System (INIS)

    Escobar, C.; Villarreal, M.; Caicedo, J.C.; Aperador, W.; Caicedo, H.H.; Prieto, P.

    2013-01-01

    HfN/VN multilayered systems were grown on 4140 steel substrates with the aim to improve their electrochemical behavior. The multilayered coatings were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ) and the bilayer number (n) while maintaining constant the total coating thickness (∼ 1.2 μm). The coatings were characterized by X-ray diffraction (XRD), and electron microscopy. The electrochemical properties were studied by Electrochemical Impedance Spectroscopy and Tafel curves. XRD results showed preferential growth in the face-centered cubic (111) crystal structure for [HfN/VN] n multilayered coatings. The maximum corrosion resistance was obtained for coatings with (Λ) equal to 15 nm, corresponding to bilayer n = 80. Polarization resistance and corrosion rate was around 112.19 kΩ cm 2 and 0.094*10 −3 mmy respectively; moreover, these multilayered system showed a decrease of 80% on mass loss due to the corrosive–erosive process, in relation to multilayered systems with n = 1 and Λ = 1200. HfN/VN multilayers have been designed and deposited on Si (100) and AISI 4140 steel substrates with bilayer periods (Λ) in a broad range, from nanometers to hundreds of nanometers to study the microstructural evolution and electrochemical progress with decreasing bilayer thickness. - Highlights: • Enhancements on surface electrochemical properties and response to surface corrosion attack. • Superficial phenomenon that occurs in corrosion surface of [Hf-Nitrides/V-Nitrides]n • Corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

  8. Interlayer shear of nanomaterials: Graphene-graphene, boron nitride-boron nitride and graphene-boron nitride

    Institute of Scientific and Technical Information of China (English)

    Yinfeng Li; Weiwei Zhang; Bill Guo; Dibakar Datta

    2017-01-01

    In this paper,the interlayer sliding between graphene and boron nitride (h-BN) is studied by molecular dynamics simulations.The interlayer shear force between h-BN/h-BN is found to be six times higher than that of graphene/graphene,while the interlayer shear between graphene/h-BN is approximate to that of graphene/graphene.The graphene/h-BN heterostructure shows several anomalous interlayer shear characteristics compared to its bilayer counterparts.For graphene/graphene and h-BN/h-BN,interlayer shears only exit along the sliding direction while interlayer shear for graphene/h-BN is observed along both the translocation and perpendicular directions.Our results provide significant insight into the interlayer shear characteristics of 2D nanomaterials.

  9. Fabrication of carbide and nitride pellets and the nitride irradiations Niloc 1 and Niloc 2

    International Nuclear Information System (INIS)

    Blank, H.

    1991-01-01

    Besides the relatively well-known advanced LMFBR mixed carbide fuel an advanced mixed nitride is also an attractive candidate for the optimised fuel cycle of the European Fast Reactor, but the present knowledge about the nitride is still insufficient and should be raised to the level of the carbide. For such an optimised fuel cycle the following general conditions have been set up for the fuel: (i) the burnup of the optimised MN and MC should be at least 15 a/o or even beyond, at moderate linear ratings of less than 75 kW/m (ii) the fuel will be used in a He-bonding pin concept and (iii) as far as available an advanced economic pellet fabrication method should be employed. (iv) The fuel structure must contain 15 - 20% porosity in order to accomodate the fission product swelling at high burnup. This report gives a comprehensive description of fuel and pellet fabrication and characterization, irradiation, and post-irradiation examination. From the results important conclusions can be drawn about future work on nitrides

  10. Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

    International Nuclear Information System (INIS)

    Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2007-01-01

    We have investigated the stability of amorphous germanium nitride (Ge 3 N 4 ) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge 3 N 4 layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO 2 layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO 2 islands on the surfaces. These findings indicate that although Ge 3 N 4 layers have superior thermal stability compared to the GeO 2 layers, Ge 3 N 4 reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge 3 N 4 insulator or passivation layers

  11. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    Science.gov (United States)

    Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.

    2015-12-01

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

  12. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    International Nuclear Information System (INIS)

    Hamann, S.; Röpcke, J.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.

    2015-01-01

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH 4 , C 2 H 2 , HCN, and NH 3 ). With the help of OES, the rotational temperature of the screen plasma could be determined

  13. EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

    Science.gov (United States)

    Han, Jung; Kneissl, Michael

    2012-02-01

    Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

  14. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    Energy Technology Data Exchange (ETDEWEB)

    Hamann, S., E-mail: hamann@inp-greifswald.de; Röpcke, J. [INP-Greifswald, Felix-Hausdorff-Str. 2, 17489 Greifswald (Germany); Börner, K.; Burlacov, I.; Spies, H.-J. [TU Bergakademie Freiberg, Institute of Materials Engineering, Gustav-Zeuner-Str. 5, 09599 Freiberg (Germany); Strämke, M.; Strämke, S. [ELTRO GmbH, Arnold-Sommerfeld-Ring 3, 52499 Baesweiler (Germany)

    2015-12-15

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH{sub 4}, C{sub 2}H{sub 2}, HCN, and NH{sub 3}). With the help of OES, the rotational temperature of the screen plasma could be determined.

  15. Comparative study involving the uranium determination through catalytic reduction of nitrates and nitrides by using decoupled plasma nitridation (DPN)

    International Nuclear Information System (INIS)

    Aguiar, Marco Antonio Souza; Gutz, Ivano G. Rolf

    1999-01-01

    This paper reports a comparative study on the determination of uranium through the catalytic reduction of nitrate and nitride using the decoupled plasma nitridation. The uranyl ions are a good catalyst for the reduction of NO - 3 and NO - 2 ions on the surface of a hanging drop mercury electrode (HDME). The presence of NO - in a solution with p H = 3 presented a catalytic signal more intense than the signal obtained with NO - 3 (concentration ten times higher). A detection limit of 1x10 9 M was obtained using the technique of decoupled plasma nitridation (DPN), suggesting the development of a sensitive way for the determination of uranium in different matrixes

  16. Microstructure and Hardness of High Temperature Gas Nitrided AISI 420 Martensitic Stainless Steel

    Directory of Open Access Journals (Sweden)

    Ibrahim Nor Nurulhuda Md.

    2014-07-01

    Full Text Available This study examined the microstructure and hardness of as-received and nitrided AISI 420 martensitic stainless steels. High temperature gas nitriding was employed to treat the steels at 1200°C for one hour and four hours using nitrogen gas, followed by furnace cooled. Chromium nitride and iron nitride were formed and concentrated at the outmost surface area of the steels since this region contained the highest concentration of nitrogen. The grain size enlarged at the interior region of the nitrided steels due to nitriding at temperature above the recrystallization temperature of the steel and followed by slow cooling. The nitrided steels produced higher surface hardness compared to as-received steel due to the presence of nitrogen and the precipitation of nitrides. Harder steel was produced when nitriding at four hours compared to one hour since more nitrogen permeated into the steel.

  17. Hydrogen diffusion between plasma-deposited silicon nitride-polyimide polymer interfaces

    International Nuclear Information System (INIS)

    Nguyen, S.V.; Kerbaugh, M.

    1988-01-01

    This paper reports a nuclear reaction analysis (NRA) for hydrogen technique used to analyze the hydrogen concentration near plasma enhanced chemical vapor deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF 4 + O 2 (8% O 2 ) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate

  18. Anomalous piezoelectricity in two-dimensional graphene nitride nanosheets.

    Science.gov (United States)

    Zelisko, Matthew; Hanlumyuang, Yuranan; Yang, Shubin; Liu, Yuanming; Lei, Chihou; Li, Jiangyu; Ajayan, Pulickel M; Sharma, Pradeep

    2014-06-27

    Piezoelectricity is a unique property of materials that permits the conversion of mechanical stimuli into electrical and vice versa. On the basis of crystal symmetry considerations, pristine carbon nitride (C3N4) in its various forms is non-piezoelectric. Here we find clear evidence via piezoresponse force microscopy and quantum mechanical calculations that both atomically thin and layered graphitic carbon nitride, or graphene nitride, nanosheets exhibit anomalous piezoelectricity. Insights from ab inito calculations indicate that the emergence of piezoelectricity in this material is due to the fact that a stable phase of graphene nitride nanosheet is riddled with regularly spaced triangular holes. These non-centrosymmetric pores, and the universal presence of flexoelectricity in all dielectrics, lead to the manifestation of the apparent and experimentally verified piezoelectric response. Quantitatively, an e11 piezoelectric coefficient of 0.758 C m(-2) is predicted for C3N4 superlattice, significantly larger than that of the commonly compared α-quartz.

  19. Continuum modelling for carbon and boron nitride nanostructures

    International Nuclear Information System (INIS)

    Thamwattana, Ngamta; Hill, James M

    2007-01-01

    Continuum based models are presented here for certain boron nitride and carbon nanostructures. In particular, certain fullerene interactions, C 60 -C 60 , B 36 N 36 -B 36 N 36 and C 60 -B 36 N 36 , and fullerene-nanotube oscillator interactions, C 60 -boron nitride nanotube, C 60 -carbon nanotube, B 36 N 36 -boron nitride nanotube and B 36 N 36 -carbon nanotube, are studied using the Lennard-Jones potential and the continuum approach, which assumes a uniform distribution of atoms on the surface of each molecule. Issues regarding the encapsulation of a fullerene into a nanotube are also addressed, including acceptance and suction energies of the fullerenes, preferred position of the fullerenes inside the nanotube and the gigahertz frequency oscillation of the inner molecule inside the outer nanotube. Our primary purpose here is to extend a number of established results for carbon to the boron nitride nanostructures

  20. Iron Carbides and Nitrides: Ancient Materials with Novel Prospects.

    Science.gov (United States)

    Ye, Zhantong; Zhang, Peng; Lei, Xiang; Wang, Xiaobai; Zhao, Nan; Yang, Hua

    2018-02-07

    Iron carbides and nitrides have aroused great interest in researchers, due to their excellent magnetic properties, good machinability and the particular catalytic activity. Based on these advantages, iron carbides and nitrides can be applied in various areas such as magnetic materials, biomedical, photo- and electrocatalysis. In contrast to their simple elemental composition, the synthesis of iron carbides and nitrides still has great challenges, particularly at the nanoscale, but it is usually beneficial to improve performance in corresponding applications. In this review, we introduce the investigations about iron carbides and nitrides, concerning their structure, synthesis strategy and various applications from magnetism to the catalysis. Furthermore, the future prospects are also discussed briefly. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Defect complexes in carbon and boron nitride nanotubes

    CSIR Research Space (South Africa)

    Mashapa, MG

    2012-05-01

    Full Text Available The effect of defect complexes on the stability, structural and electronic properties of single-walled carbon nanotubes and boron nitride nanotubes is investigated using the ab initio pseudopotential density functional method implemented...

  2. Effect of gas pressure on active screen plasma nitriding response

    International Nuclear Information System (INIS)

    Nishimoto, Akio; Nagatsuka, Kimiaki; Narita, Ryota; Nii, Hiroaki; Akamatsu, Katsuya

    2010-01-01

    An austenitic stainless steel AISI 304 was active screen plasma nitrided using a 304 steel screen to investigate the effect of the gas pressure on the ASPN response. The sample was treated for 18 ks at 723 K in 25% N2 + 75% H2 gases. The gas pressure was changed to 100, 600 and 1200 Pa. The distance between screen and sample was also changed to 10, 30 and 50 mm. The nitrided samples were characterized by appearance observation, surface roughness, optical microscopy, X-ray diffraction, and microhardness testing. After nitriding, polygonal particles with a normal distribution were observed at the center and edges of all the ASPN-treated sample surfaces. Particles on the sample surfaces were finer with an increase in the gas pressure. The nitrided layer with a greater and homogeneous thickness was obtained at a low gas pressure of 100 Pa. (author)

  3. Optical properties of indium nitride films

    International Nuclear Information System (INIS)

    Tyagaj, V.A.; Evstigneev, A.M.; Krasiko, A.N.; Andreeva, A.F.; Malakhov, V.Ya.

    1977-01-01

    Reflection and transmission spectra of heavily doped indium nitride are studied at lambda=0.5-5 μm. Dispersion of the refractive index near the plasma resonance frequency, h.f. dielectric constant (epsilonsub(infinity)=9.3), and extinction coefficient near the transmission maximum of films have been determined from the analysis of interference pattern. The reflection spectrum exhibits maximum in the infrared range and optical effective mass is found through its position (msub(opt)*=0.11msub(0)). Free carrier absorption coefficient is shown to vary according to the law K approximately lambdasup(2.9+-0.1) which is characteristic of electron scattering by charged impurities. The analysis of absorption spectra near the threshold of interband transitions has lead to the conclusion that free carriers are localized in the lateral extremum of conduction band (or out of the center of the Brillouin zone), therefore the Burstein-Moss effect is absent

  4. Boron Nitride Nanotube: Synthesis and Applications

    Science.gov (United States)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; hide

    2014-01-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  5. Boron nitride: A new photonic material

    International Nuclear Information System (INIS)

    Chubarov, M.; Pedersen, H.; Högberg, H.; Filippov, S.; Engelbrecht, J.A.A.; O'Connel, J.; Henry, A.

    2014-01-01

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp 2 -BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  6. Boron nitride: A new photonic material

    Energy Technology Data Exchange (ETDEWEB)

    Chubarov, M., E-mail: mihcu@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Pedersen, H., E-mail: henke@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Högberg, H., E-mail: hanho@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Filippov, S., E-mail: stafi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); O' Connel, J., E-mail: jacques.oconnell@gmail.com [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Henry, A., E-mail: anne.henry@liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden)

    2014-04-15

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp{sup 2}-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  7. Laser ablation of molecular carbon nitride compounds

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, D., E-mail: d.fischer@fkf.mpg.de [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Schwinghammer, K. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany); Sondermann, C. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Lau, V.W.; Mannhart, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Lotsch, B.V. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany)

    2015-09-15

    We present a method for the preparation of thin films on sapphire substrates of the carbon nitride precursors dicyandiamide (C{sub 2}N{sub 4}H{sub 4}), melamine (C{sub 3}N{sub 6}H{sub 6}), and melem (C{sub 6}N{sub 10}H{sub 6}), using the femtosecond-pulsed laser deposition technique (femto-PLD) at different temperatures. The depositions were carried out under high vacuum with a femtosecond-pulsed laser. The focused laser beam is scanned on the surface of a rotating target consisting of the pelletized compounds. The resulting polycrystalline, opaque films were characterized by X-ray powder diffraction, infrared, Raman, and X-ray photoelectron spectroscopy, photoluminescence, SEM, and MALDI-TOF mass spectrometry measurements. The crystal structures and optical/spectroscopic results of the obtained rough films largely match those of the bulk materials.

  8. Hexagonal boron nitride and water interaction parameters

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yanbin; Aluru, Narayana R., E-mail: aluru@illinois.edu [Department of Mechanical Science and Engineering, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Wagner, Lucas K. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080 (United States)

    2016-04-28

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

  9. Apatite formability of boron nitride nanotubes

    International Nuclear Information System (INIS)

    Lahiri, Debrupa; Keshri, Anup K; Agarwal, Arvind; Singh, Virendra; Seal, Sudipta

    2011-01-01

    This study investigates the ability of boron nitride nanotubes (BNNTs) to induce apatite formation in a simulated body fluid environment for a period of 7, 14 and 28 days. BNNTs, when soaked in the simulated body fluid, are found to induce hydroxyapatite (HA) precipitation on their surface. The precipitation process has an initial incubation period of ∼ 4.6 days. The amount of HA precipitate increases gradually with the soaking time. High resolution TEM results indicated a hexagonal crystal structure of HA needles. No specific crystallographic orientation relationship is observed between BNNT and HA, which is due to the presence of a thin amorphous HA layer on the BNNT surface that disturbs a definite orientation relationship.

  10. CVD mechanism of pyrolytic boron nitride

    International Nuclear Information System (INIS)

    Tanji, H.; Monden, K.; Ide, M.

    1987-01-01

    Pyrolytic boron nitride (P-BN) has become a essential material for III-V compound semiconductor manufacturing process. As the demand from electronics industry for larger single crystals increases, the demand for larger and more economical P-BN components is growing rapidly. P-BN is manufactured by low pressure CVD using boron-trihalides and ammonia as the reactants. In spite that P-BN has been in the market for quite a long time, limited number of fundamental studies regarding the kinetics and the formation mechanism of P-BN have been reported. As it has been demonstrated in CVD of Si, knowledge and both theoretical and empirical modeling of CVD process can be applied to improve the deposition technology and to give more uniform deposition with higher efficiency, and it should also apply to the deposition of P-BN

  11. Thermal expansion of quaternary nitride coatings

    Science.gov (United States)

    Tasnádi, Ferenc; Wang, Fei; Odén, Magnus; Abrikosov, Igor A.

    2018-04-01

    The thermal expansion coefficient of technologically relevant multicomponent cubic nitride alloys are predicted using the Debye model with ab initio elastic constants calculated at 0 K and an isotropic approximation for the Grüneisen parameter. Our method is benchmarked against measured thermal expansion of TiN and Ti(1-x)Al x N as well as against results of molecular dynamics simulations. We show that the thermal expansion coefficients of Ti(1-x-y)X y Al x N (X  =  Zr, Hf, Nb, V, Ta) solid solutions monotonously increase with the amount of alloying element X at all temperatures except for Zr and Hf, for which they instead decrease for y≳ 0.5 .

  12. A boron nitride nanotube peapod thermal rectifier

    International Nuclear Information System (INIS)

    Loh, G. C.; Baillargeat, D.

    2014-01-01

    The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

  13. A boron nitride nanotube peapod thermal rectifier

    Energy Technology Data Exchange (ETDEWEB)

    Loh, G. C., E-mail: jgloh@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Baillargeat, D. [CNRS-International-NTU-Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore 637553 (Singapore)

    2014-06-28

    The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

  14. Rebar graphene from functionalized boron nitride nanotubes.

    Science.gov (United States)

    Li, Yilun; Peng, Zhiwei; Larios, Eduardo; Wang, Gunuk; Lin, Jian; Yan, Zheng; Ruiz-Zepeda, Francisco; José-Yacamán, Miguel; Tour, James M

    2015-01-27

    The synthesis of rebar graphene on Cu substrates is described using functionalized boron nitride nanotubes (BNNTs) that were annealed or subjected to chemical vapor deposition (CVD) growth of graphene. Characterization shows that the BNNTs partially unzip and form a reinforcing bar (rebar) network within the graphene layer that enhances the mechanical strength through covalent bonds. The rebar graphene is transferrable to other substrates without polymer assistance. The optical transmittance and conductivity of the hybrid rebar graphene film was tested, and a field effect transistor was fabricated to explore its electrical properties. This method of synthesizing 2D hybrid graphene/BN structures should enable the hybridization of various 1D nanotube and 2D layered structures with enhanced mechanical properties.

  15. CEMS of nitride coatings in agressive environments

    Science.gov (United States)

    Hanžel, D.; Agudelo, A. C.; Gancedo, J. R.; Lakatos-Varsanyi, M.; Marco, J. F.

    1998-12-01

    The corrosion properties of single layered TiN and CrN films have been compared to bi-layered and multi-layered Ti/TiN films. XPS has showed that in humid SO2 atmosphere the best corrosion properties have been achieved by a multi-layered Ti/TiN coating. Cyclic voltammetry in acetate buffer has been applied to measure the porousity and corrosion resistance of coatings. The best results have been achieved by multi-layered Ti/TiN and CrN films. Conversion electron Mössbauer spectroscopy has been used to study the changes in the interface Fe/TiN during thermal treatment in UHV. It has been shown that the amount of iron nitrides in the interface increases with increasing temperature.

  16. CEMS of nitride coatings in agressive environments

    International Nuclear Information System (INIS)

    Hanzel, D.; Agudelo, A.C.; Gancedo, J.R.; Lakatos-Varsanyi, M.; Marco, J.F.

    1998-01-01

    The corrosion properties of single layered TiN and CrN films have been compared to bi-layered and multi-layered Ti/TiN films. XPS has showed that in humid SO 2 atmosphere the best corrosion properties have been achieved by a multi-layered Ti/TiN coating. Cyclic voltammetry in acetate buffer has been applied to measure the porousity and corrosion resistance of coatings. The best results have been achieved by multi-layered Ti/TiN and CrN films. Conversion electron Moessbauer spectroscopy has been used to study the changes in the interface Fe/TiN during thermal treatment in UHV. It has been shown that the amount of iron nitrides in the interface increases with increasing temperature

  17. CEMS of nitride coatings in agressive environments

    Energy Technology Data Exchange (ETDEWEB)

    Hanzel, D. [University of Ljubljana, J. Stefan Institute (Slovenia); Agudelo, A.C.; Gancedo, J.R. [Instituto de Quimica-Fisica ' Rocasolano' , CSIC (Spain); Lakatos-Varsanyi, M. [Eoetvoes University, Department of Physical Chemistry (Hungary); Marco, J.F. [Instituto de Quimica-Fisica ' Rocasolano' , CSIC (Spain)

    1998-12-15

    The corrosion properties of single layered TiN and CrN films have been compared to bi-layered and multi-layered Ti/TiN films. XPS has showed that in humid SO{sub 2} atmosphere the best corrosion properties have been achieved by a multi-layered Ti/TiN coating. Cyclic voltammetry in acetate buffer has been applied to measure the porousity and corrosion resistance of coatings. The best results have been achieved by multi-layered Ti/TiN and CrN films. Conversion electron Moessbauer spectroscopy has been used to study the changes in the interface Fe/TiN during thermal treatment in UHV. It has been shown that the amount of iron nitrides in the interface increases with increasing temperature.

  18. Synthesis and characterization of boron nitrides nanotubes

    International Nuclear Information System (INIS)

    Ferreira, T.H.; Sousa, E.M.B.

    2010-01-01

    This paper presents a new synthesis for the production of boron nitride nanotubes (BNNT) from boron powder, ammonium nitrate and hematite tube furnace CVD method. The samples were subjected to some characterization techniques as infrared spectroscopy, thermal analysis, X-ray diffraction and scanning electron microscopy and transmission. By analyzing the results can explain the chemical reactions involved in the process and confirm the formation of BNNT with several layers and about 30 nanometers in diameter. Due to excellent mechanical properties and its chemical and thermal stability this material is promising for various applications. However, BNNT has received much less attention than carbon nanotubes, it is because of great difficulty to synthesize appreciable quantities from the techniques currently known, and this is one of the main reasons this work.(author)

  19. Low temperature gaseous nitriding of Ni based superalloys

    DEFF Research Database (Denmark)

    Eliasen, K. M.; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    2010-01-01

    In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr......In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr...

  20. Preparation of phosphorus targets using the compound phosphorus nitride

    International Nuclear Information System (INIS)

    Maier-Komor, P.

    1987-01-01

    Commercially available phosphorus nitride (P 3 N 5 ) shows a high oxygen content. Nevertheless, this material is attractive for use as phosphorus targets in experiments where red phosphorus would disappear due to its high vapor pressure and where a metal partner in the phosphide must be excluded due to its high atomic number. Methods are described to produce phosphorus nitride targets by vacuum evaporation condensation. (orig.)

  1. Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride

    Science.gov (United States)

    2012-01-05

    Hutchinson, Adv. Appl . Mech. 29 (1992). [34] H. Ming-Yuan, J.W. Hutchinson, Int. J. Solids Struct. 25 (1989) 1053. [35] J. Salem , L. Ghosn, Int. J...Dynamic Multiaxial Response of a Hot- Pressed Aluminum Nitride by Guangli Hu, C. Q. Chen, K. T. Ramesh, and J. W. McCauley ARL-RP-0487...Laboratory Aberdeen Proving Ground, MD 21005-5066 ARL-RP-0487 June 2014 Dynamic Multiaxial Response of a Hot- Pressed Aluminum Nitride

  2. Optimization of time–temperature schedule for nitridation of silicon ...

    Indian Academy of Sciences (India)

    pact was optimized by kinetic study of the reaction, 3Si + 2N2 = Si3N4 at four different temperatures (1250°C,. 1300°C, 1350°C and 1400°C). ... Reaction sintered silicon nitride; nitridation; reaction kinetics. 1. Introduction. Formation of ..... cation of silica layer resulted in active oxidation of silicon at high temperature to ...

  3. Four-Wave Mixing in Silicon-Rich Nitride Waveguides

    DEFF Research Database (Denmark)

    Mitrovic, Miranda; Guan, Xiaowei; Ji, Hua

    2015-01-01

    We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss.......We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss....

  4. Defect reduction in seeded aluminum nitride crystal growth

    Science.gov (United States)

    Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A; Rao, Shailaja P.; Gibb, Shawn Robert

    2017-09-26

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  5. Platinum group metal nitrides and carbides: synthesis, properties and simulation

    International Nuclear Information System (INIS)

    Ivanovskii, Alexander L

    2009-01-01

    Experimental and theoretical data on new compounds, nitrides and carbides of the platinum group 4d and 5d metals (ruthenium, rhodium, palladium, osmium, iridium, platinum), published over the past five years are summarized. The extreme mechanical properties of platinoid nitrides and carbides, i.e., their high strength and low compressibility, are noted. The prospects of further studies and the scope of application of these compounds are discussed.

  6. Nitrogen Atom Transfer From High Valent Iron Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Michael D. [New Mexico State Univ., Las Cruces, NM (United States); Smith, Jeremy M. [Indiana Univ., Bloomington, IN (United States)

    2015-10-14

    This report describes the synthesis and reactions of high valent iron nitrides. Organonitrogen compounds such as aziridines are useful species for organic synthesis, but there are few efficient methods for their synthesis. Using iron nitrides to catalytically access these species may allow for their synthesis in an energy-and atom-efficient manner. We have developed a new ligand framework to achieve these goals as well as providing a method for inducing previously unknown reactivity.

  7. Conflict minerals in the compute sector: estimating extent of tin, tantalum, tungsten, and gold use in ICT products.

    Science.gov (United States)

    Fitzpatrick, Colin; Olivetti, Elsa; Miller, Reed; Roth, Richard; Kirchain, Randolph

    2015-01-20

    Recent legislation has focused attention on the supply chains of tin, tungsten, tantalum, and gold (3TG), specifically those originating from the eastern part of the Democratic Republic of Congo. The unique properties of these so-called “conflict minerals” lead to their use in many products, ranging from medical devices to industrial cutting tools. This paper calculates per product use of 3TG in several information, communication, and technology (ICT) products such as desktops, servers, laptops, smart phones, and tablets. By scaling up individual product estimates to global shipment figures, this work estimates the influence of the ICT sector on 3TG mining in covered countries. The model estimates the upper bound of tin, tungsten, tantalum, and gold use within ICT products to be 2%, 0.1%, 15%, and 3% of the 2013 market share, respectively. This result is projected into the future (2018) based on the anticipated increase in ICT device production.

  8. Influence of laser alloyed layer of carbon steel with tantalum on the structure and surface layer properties

    International Nuclear Information System (INIS)

    Woldan, A.; Kusinski, J.; Kac, S.

    1999-01-01

    The paper describes the microstructure and properties (chemical composition and microhardness) of the surface laser alloyed layer with tantalum. The surface alloyed zones varied in microstructure, zones depth and width, as well as Ta content according to the thickness of the coated layer, bonding paint type and process parameters (power and scanning velocity). The electron microprobe analysis of melts showed that higher tantalum content in the melted zone resulted from the thicker original Ta coating as well as slower scanning velocity. Scanning electron microscopy examinations show that dendritic structure of the melted zone becomes evident when carbon was used as one of the components of the binder, while structure is typically martensitic when silicon containing binder was used for powder deposition. Samples covered with Ta and carbon containing binder showed after laser alloying higher hardness than in case of using silicon containing binder. (author)

  9. Elasticity of Tantalum to 105 Gpa using a stress and angle-resolved x-ray diffraction

    International Nuclear Information System (INIS)

    Cynn, H; Yoo, C S

    1999-01-01

    Determining the mechanical properties such as elastic constants of metals at Mbar pressures has been a difficult task in experiment. Following the development of anisotropic elastic theory by Singh et al.[l], Mao et a1.[2] have recently developed a novel experimental technique to determine the elastic constants of Fe by using the stress and energy-dispersive x-ray diffraction (SEX). In this paper, we present an improved complementary technique, stress and angle-resolved x-ray diffraction (SAX), which we have applied to determine the elastic constants of tantalum to 105 GPa. The extrapolation of the tantalum elastic data shows an excellent agreement with the low-pressure ultrasonic data[3]. We also discuss the improvement of this SAX method over the previous SEX.[elastic constant, anisotropic elastic theory, angle-dispersive synchrotron x-ray diffraction, mechanical properties

  10. Extraction - spectrophotometric determination of tantalum (V) with 2-(2-thiazolylazo)-5-dimethylaminophenol and 1,3-diphenylguanidine

    International Nuclear Information System (INIS)

    Tsurumi, C.; Furuya, K.; Kamada, H.

    1981-01-01

    Tantalum(V)-2-(2-thiazolylazo)-5-dimethylaminophenol (TAM) chelate anion is extracted quantitatively into benzyl alcohol with 1,3-diphenylguanidine (DPG) to form a ternary complex. In the organic phase, the complex has an absorption maximum at 605 nm. The optimum pH range for the extraction is 4.1 to 4.9 and the ternary complex is stable for at least 50 min. Beer's law is obeyed over a concentration range of 2 to 18 μg of tantalum(V) in 10 ml of the organic phase. The molar absorptivity of the ternary complex is 4.1 x 10 4 l mol -1 at 605 nm. The composition of the ternary complex is considered to be (TaO 2 ) 2 (TAM) 3 (DPG + ). (author)

  11. Theoretical study of nitride short period superlattices

    Science.gov (United States)

    Gorczyca, I.; Suski, T.; Christensen, N. E.; Svane, A.

    2018-02-01

    Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and nonpolar) and different strain conditions (free-standing and pseudomorphic) all the factors influencing the band gap engineering are analyzed. Dependence on internal strain and lattice geometry is considered, but the main attention is devoted to the influence of the internal electric field and the hybridization of well and barrier wave functions. The contributions of these two important factors to band gap behavior are illustrated and estimated quantitatively. It appears that there are two interesting ranges of layer thicknesses; in one (few atomic monolayers in barriers and wells) the influence of the wave function hybridization is dominant, whereas in the other (layers thicker than roughly five to six monolayers) dependence of electric field on the band gaps is more important. The band gap behavior in superlattices is compared with the band gap dependence on composition in the corresponding ternary and quaternary alloys. It is shown that for superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary alloys. The calculated values of the band gaps are compared with the photoluminescence emission energies, when the corresponding data are available. Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.

  12. Gallium Nitride Schottky betavoltaic nuclear batteries

    International Nuclear Information System (INIS)

    Lu Min; Zhang Guoguang; Fu Kai; Yu Guohao; Su Dan; Hu Jifeng

    2011-01-01

    Research highlights: → Gallium Nitride nuclear batteries with Ni-63 are demonstrated for the first time. → Open circuit voltage of 0.1 V and conversion efficiency of 0.32% have been obtained. → The limited performance is due to thin effective energy deposition layer. → The output power is expected to greatly increase with growing thick GaN films. -- Abstract: Gallium Nitride (GaN) Schottky betavoltaic nuclear batteries (GNBB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN Schottky diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 ( 63 Ni), which emits β particles, is loaded on the GaN Schottky diodes to achieve GNBB. X-ray diffraction (XRD) and photoluminescence (PL) are carried out to investigate the crystal quality for the GaN films as grown. Current-voltage (I-V) characteristics shows that the GaN Schottky diodes are not jet broken down at -200 V due to consummate fabrication processes, and the open circuit voltage of the GNBB is 0.1 V and the short circuit current density is 1.2 nA cm -2 . The limited performance of the GNBB is due to thin effective energy deposition layer, which is only 206 nm to absorb very small partial energy of the β particles because of the relatively high dislocation density and carrier concentration. However, the conversion efficiency of 0.32% and charge collection efficiency (CCE) of 29% for the GNBB have been obtained. Therefore, the output power of the GNBB are expected to greatly increase with growing high quality thick GaN films.

  13. Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O

    Energy Technology Data Exchange (ETDEWEB)

    Kharlamov, Alexey [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Bondarenko, Marina, E-mail: mebondarenko@ukr.net [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Kharlamova, Ganna [Taras Shevchenko National University of Kiev, Volodymyrs' ka St. 64, 01601 Kiev (Ukraine); Fomenko, Veniamin [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine)

    2016-09-15

    For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists of weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets. - Graphical abstract: XRD pattern and schematic atomic model of one layer of reduced carbon nitride, carbon nitride oxide and synthesized carbon nitride. For the first time at the reduction by hydroquinone of the water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O is obtained the reduced carbon nitride (or reduced multi-layer azagraphene). Display Omitted - Highlights: • First the reduced carbon nitride (RCN) at the reduction of the carbon nitride oxide was obtained. • Water-soluble carbon nitride oxide was reduced by hydroquinone. • The chemical bonds in a heteroatomic plane of RCN correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. • Reduced carbon nitride consists of poorly connected heteroatomic azagraphene layers.

  14. A novel tantalum-based sol-gel packed microextraction syringe for highly specific enrichment of phosphopeptides in MALDI-MS applications.

    Science.gov (United States)

    Çelikbıçak, Ömür; Atakay, Mehmet; Güler, Ülkü; Salih, Bekir

    2013-08-07

    A new tantalum-based sol-gel material was synthesized using a unique sol-gel synthesis pathway by PEG incorporation into the sol-gel structure without performing a calcination step. This improved its chemical and physical properties for the high capacity and selective enrichment of phosphopeptides from protein digests in complex biological media. The specificity of the tantalum-based sol-gel material for phosphopeptides was evaluated and compared with tantalum(V) oxide (Ta2O5) in different phosphopeptide enrichment applications. The tantalum-based sol-gel and tantalum(V) oxide were characterized in detail using FT-IR spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM), and also using a surface area and pore size analyzer. In the characterization studies, the surface morphology, pore volume, crystallinity of the materials and PEG incorporation into the sol-gel structure to produce a more hydrophilic material were successfully demonstrated. The X-ray diffractograms of the two different materials were compared and it was noted that the broad signals of the tantalum-based sol-gel clearly represented the amorphous structure of the sol-gel material, which was more likely to create enough surface area and to provide more accessible tantalum atoms for phosphopeptides to be easily adsorbed when compared with the neat and more crystalline structure of Ta2O5. Therefore, the phosphopeptide enrichment performance of the tantalum-based sol-gels was found to be remarkably higher than the more crystalline Ta2O5 in our studies. Phosphopeptides at femtomole levels could be selectively enriched using the tantalum-based sol-gel and detected with a higher signal-to-noise ratio by matrix-assisted laser desorption/ionization-mass spectrometer (MALDI-MS). Moreover, phosphopeptides in a tryptic digest of non-fat bovine milk as a complex real-world biological sample were retained with higher yield using a tantalum-based sol-gel. Additionally, the sol-gel material

  15. Preparation and characteristics of various rare earth nitrides

    International Nuclear Information System (INIS)

    Imamura, H.; Imahashi, T.; Zaimi, M.; Sakata, Y.

    2008-01-01

    Active nanocrystalline nitrides of EuN and YbN with high surface areas were successfully prepared by the thermal decomposition of the rare earth amides (Eu(NH 2 ) 2 , Yb(NH 2 ) 2 and Yb(NH 2 ) 3 ). For the preparation of CeN, PrN and NdN, the direct reaction of the rare earth metals with ammonia was extensively studied to determine optimal conditions. In the reaction of rare earth metals with ammonia, hydrides besides the nitrides were competitively formed. The reaction conditions such as temperatures and ratios of ammonia to rare earth metal were crucial in preferential formation of nitride. The nanocrystalline YbN and EuN readily absorbed large amounts of ammonia even at room temperature upon contact with ammonia (13.3 kPa). The absorbed ammonia existed in at least two forms on/in the nitride; the one was surface-adsorbed ammonia and the other ammonia absorbed in the nitride in a decomposed state. The properties of ammonia absorbed by the nitride were further evaluated by temperature-programmed desorption (TPD), FT-IR and XRD techniques

  16. Corrosion studies of tantalum in oxidizing media - intercomparison of data obtained in model media and in a test facility

    International Nuclear Information System (INIS)

    Vehlow, J.; Wieczorek, H.

    1989-01-01

    The suitability of tantalum as a material for wet incineration of combustible wastes has been tested in model mixtures of sulfuric and nitric acid at about 250deg C. In addition parts of a semi-technical test facility have been investigated, which had been in operation for more than 3000 h. In general there is good correspondence between predicted wall losses and those found under real conditions. (orig.) [de

  17. In situ production of tantalum carbide nanodispersoids in a copper matrix by reactive milling and hot extrusion

    Energy Technology Data Exchange (ETDEWEB)

    Manotas-Albor, Milton, E-mail: manotasm@uninorte.edu.co [Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Km. 5 vía a Puerto Colombia, Barranquilla (Colombia); Departamento de Ingeniería Mecánica, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Beauchef 850, Santiago (Chile); Vargas-Uscategui, Alejandro [Laboratorio de Materiales a Nanoescala, Departamento de Ciencia de los Materiales, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Tupper Av. 2069, Santiago (Chile); Palma, Rodrigo [Departamento de Ingeniería Mecánica, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Beauchef 850, Santiago (Chile); Mosquera, Edgar [Laboratorio de Materiales a Nanoescala, Departamento de Ciencia de los Materiales, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Tupper Av. 2069, Santiago (Chile)

    2014-06-15

    Highlights: • Tantalum carbide nanodispersoids were obtained in a copper matrix. • Nanodispersoids were obtained by means of reactive milling followed by hot extrusion. • Hexane was used as the liquid medium for the reactive mechanical alloying process. • Hexane provides the carbon (C) needed for the process. • The reaction of tantalum carbide formation takes place in the hot extrusion. - Abstract: This paper presents a study of the in situ production of tantalum carbide nanodispersoids in a copper matrix. The copper matrix composites were produced by means of reactive milling in hexane (C{sub 6}H{sub 14}) followed by hot extrusion. The composite materials were characterized by means of optical emission spectroscopy (OES), X-ray fluorescence (XRF), scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and Vickers micro-hardness. The effect of milling time was analyzed in 10, 20 and 30 h in a composite with a nominal composition Cu–5 vol.% TaC. A systematic increase of the dislocations density and the carbon concentration were observed when the milling time was increased, whereas the crystallite size of the composite matrix decreased. The material milled for 30 h and hot-extruded showed a density of 9037 kg m{sup −3} (98.2% densification) and a softening resistance of 204 HV; however the latter value showed an abrupt drop after an annealing treatment at 923 K for 1 h. Finally, the TEM analysis showed the presence of tantalum carbide (Ta{sub 4}C{sub 3}) nanodispersoids.

  18. The effect of yttrium addition on oxidation of a sputtered nanocrystalline coating with moderate amount of tantalum in composition

    International Nuclear Information System (INIS)

    Wang, Jinlong; Chen, Minghui; Yang, Lanlan; Liu, Li; Zhu, Shenglong; Wang, Fuhui; Meng, Guozhe

    2016-01-01

    Graphical abstract: - Highlights: • Effect of Y addition on oxidation of nanocrystalline coating is studied. • Y addition delays transformation of q-Al_2O_3 to a-Al_2O_3 during oxidation. • Y addition prevents scale rumpling. • Y segregates at grain boundaries of the nanocrystalline coating. • Y retards the transportation of Ta thus reduces its oxidation. - Abstract: The effect of yttrium addition on isothermal oxidation at 1050 °C of a sputtered nanocrystalline coating with moderate amount of tantalum in composition was investigated. Results indicate that yttrium addition delays transformation of metastable θ-Al_2O_3 to equilibrium α-Al_2O_3 grown on the nanocrystalline coatings. It prevents scale rumpling and promotes the formation of oxide pegs at interface between the oxide scale and the underlying coating. Besides, yttrium prefers to segregate at grain boundaries of the nanocrystalline coating and retards the outward transportation of tantalum from coating to oxide scale, thus reducing the excessive oxidation of tantalum.

  19. Dissolution kinetics of small amounts of oxygen in tantalum alloy T-111 and internal oxide displacement reactions during annealing

    Science.gov (United States)

    Stecura, S.

    1976-01-01

    Oxygen was added to T-111 (Ta-8W-2Hf, wt. %) at 820 and 990 C at an oxygen pressure of about 0.0003 torr. The technique employed permitted predetermined and reproducible doping of T-111 up to 3.0 at. % oxygen. Based on the temperature dependence of the doping reaction, it is concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the latter oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and of other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high-temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C. The vaporization of WO3 has no apparent affect on the doping reaction.

  20. Effect of tungsten and tantalum on the low cycle fatigue behavior of reduced activation ferritic/martensitic steels

    Energy Technology Data Exchange (ETDEWEB)

    Shankar, Vani, E-mail: vani@igcar.gov.in [Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102 (India); Mariappan, K.; Nagesha, A.; Prasad Reddy, G.V.; Sandhya, R.; Mathew, M.D.; Jayakumar, T. [Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102 (India)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer Effect of tungsten and tantalum on low cycle fatigue behavior of RAFM steels. Black-Right-Pointing-Pointer Both alloying elements W and Ta improved fatigue life. Black-Right-Pointing-Pointer Increase in Ta content improved fatigue life more than W. Black-Right-Pointing-Pointer Optimization of W content at 1.4 wt.%. Black-Right-Pointing-Pointer Softening behavior closely related to W and Ta content. - Abstract: Reduced activation ferritic/martensitic (RAFM) steels are candidate materials for the test blanket modules of International Thermonuclear Experimental Reactor (ITER). Several degradation mechanisms such as thermal fatigue, low cycle fatigue, creep fatigue interaction, creep, irradiation hardening, swelling and phase instability associated irradiation embrittlement must be understood in order to estimate the component lifetime and issues concerning the structural integrity of components. The current work focuses on the effect of tungsten and tantalum on the low cycle fatigue (LCF) behavior of RAFM steels. Both alloying elements tungsten and tantalum improved the fatigue life. Influence of Ta on increasing fatigue life was an order of magnitude higher than the influence of W on improving the fatigue life. Based on the present study, the W content was optimized at 1.4 wt.%. Softening behavior of RAFM steels showed a strong dependence on W and Ta content in RAFM steels.