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Sample records for switching ferroelectric materials

  1. Nanoscale organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

    2014-01-01

    Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

  2. Polarisation Dynamics in Ferroelectric Materials

    Science.gov (United States)

    Buchacher, Till

    Ferroelectric materials have established themselves as indispensable in key applications such as piezoelectric transducers and energy storage devices. While the use of ferroelectrics in these fields dates back more than 50 years, little progress has been made to extend applications of ferroelectrics into new fields. To a large extend the observed slow progress is not caused by a lack of potential applications, but to by the inherent complexity associated with a structural phase transition, combined with strong coupling of polarisation, strain and temperature, and the strong modification of the phenomena by material defects. This thesis takes a look at prospective applications in energy storage for pulse power applications, solid state cooling and non-volatile random access memory and identifies key issues that need to be resolved. The thesis delivers time-domain based approaches to determine ferroelectric switching behaviour of bulk materials and thin films down to sub-ns time scales. The approach permitted study of how information written to a ferroelectric memory decays as a result of multiple non-destructive read operations. Furthermore simultaneous direct measurements of temperature and ferroelectric switching established a direct link between the retarded switching phenomenon observed in ferroelectrics and temperature changes brought by the electrocaloric effect. By comparison with analytical models and numerical simulation a large localised temperature change on the scale of individual domains is postulated. It implies a much larger coupling between switching and local temperature than has been previously considered. In extension of the model the frequency dependence of polarisation fatigue under bipolar conditions is explained by the occurrence of large temperature gradients in the material.

  3. Ferroelectrics as Smart Mechanical Materials.

    Science.gov (United States)

    Cordero-Edwards, Kumara; Domingo, Neus; Abdollahi, Amir; Sort, Jordi; Catalan, Gustau

    2017-10-01

    The mechanical properties of materials are insensitive to space inversion, even when they are crystallographically asymmetric. In practice, this means that turning a piezoelectric crystal upside down or switching the polarization of a ferroelectric should not change its mechanical response. Strain gradients, however, introduce an additional source of asymmetry that has mechanical consequences. Using nanoindentation and contact-resonance force microscopy, this study demonstrates that the mechanical response to indentation of a uniaxial ferroelectric (LiNbO 3 ) does change when its polarity is switched, and use this mechanical asymmetry both to quantify its flexoelectricity and to mechanically read the sign of its ferroelectric domains. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Mechanical switching of ferroelectric domains beyond flexoelectricity

    Science.gov (United States)

    Chen, Weijin; Liu, Jianyi; Ma, Lele; Liu, Linjie; Jiang, G. L.; Zheng, Yue

    2018-02-01

    The resurgence of interest in flexoelectricity has prompted discussions on the feasibility of switching ferroelectric domains 'non-electrically'. In this work, we perform three-dimensional thermodynamic simulations in combination with ab initio calculations and effective Hamiltonian simulations to demonstrate the great effects of surface screening and surface bonding on ferroelectric domain switching triggered by local tip loading. A three-dimensional simulation scheme has been developed to capture the tip-induced domain switching behavior in ferroelectric thin films by adequately taking into account the surface screening effect and surface bonding effect of the ferroelectric film, as well as the finite elastic stiffness of the substrate and the electrode layers. The major findings are as follows. (i) Compared with flexoelectricity, surface effects can be overwhelming and lead to much more efficient mechanical switching caused by tip loading. (ii) The surface-assisted mechanical switching can be bi-directional without the necessity of reversing strain gradients. (iii) A mode transition from local to propagating domain switching occurs when the screening below a critical value. A ripple effect of domain switching appears with the formation of concentric loop domains. (iv) The ripple effect can lead to 'domain interference' and a deterministic writing of confined loop domain patterns by local excitations. Our study reveals the hidden switching mechanisms of ferroelectric domains and the possible roles of surface in mechanical switching. The ripple effect of domain switching, which is believed to be general in dipole systems, broadens our current knowledge of domain engineering.

  5. Losses in Ferroelectric Materials

    Science.gov (United States)

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-01-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  6. Non-local domain switching in ferroelectric nanostructures

    Science.gov (United States)

    Jeong, Seuri; Kim, Kwang-Eun; Yang, Chan-Ho

    Nanoscale ferroic materials have attracted considerable interest due to their novel properties including electronic, electromachanical and magnetoelectric properties. Until now, exotic ferroelectric structures have been described theoretically such as flux-closure domains, but experimental studies for ferroelectric multi-domains in nanostructures have been a lack of research due to their large domain wall energy. In this study, we realized the radial-quadrant domain structures using strain relaxation known as flexoelectricity. Moreover, we observed that local electric polarization switching can affect distant domain regions to minimize free energy. Our findings provide basic concepts to demonstrate and understand ferroelectric nano-scale multi-domain structures.

  7. Ferroelectric materials and their applications

    CERN Document Server

    Xu, Y

    2013-01-01

    This book presents the basic physical properties, structure, fabrication methods and applications of ferroelectric materials. These are widely used in various devices, such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage, display devices, etc. The ferroelectric materials described in this book include a relatively complete list of practical and promising ferroelectric single crystals, bulk ceramics and thin films. Included are perovskite-type, lithium niobate, tungsten-bronze-type, water-soluable

  8. Switching Characteristics of Ferroelectric Transistor Inverters

    Science.gov (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  9. Quantum switching of polarization in mesoscopic ferroelectrics

    International Nuclear Information System (INIS)

    Sa de Melo, C.A.

    1996-01-01

    A single domain of a uniaxial ferroelectric grain may be thought of as a classical permanent memory. At the mesoscopic level this system may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. The possibility of quantum switching of the polarization in mesoscopic uniaxial ferroelectric grains is thus proposed. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature both in the absence and in the presence of an external static electric field. In addition, a discussion of crossover temperature between thermally activated behavior and quantum tunneling behavior is presented. And finally, environmental effects (phonons, defects, and surfaces) are also considered. copyright 1996 The American Physical Society

  10. Modeling of charge switching in ferroelectric capacitors.

    Science.gov (United States)

    Sun, Shunming; Kalkur, Thottam S

    2004-07-01

    To simulate charge switching in ferroelectric capacitors, a pair of exponential growth and decay currents is mapped to the process of polarization reversal. This is based on the fact that these exponential currents [i.e., i = I(m) e(t/tau) (t or = 0)], are completely specified by two constants I(m) and tau and each accommodates an integral charge Q = I(m) x tau. Equating this charge to the remanent spontaneous polarization allows for the modeling of switching current. For practical circuit simulations for charge switching, this modeling of switching current is simplified to an exponential decay current whose integral charge is set equal to the total reversed spontaneous polarization. This is because an exponential decay current can be conveniently implemented by charging a series resistor and capacitor (RC) circuit with a pulse-voltage source. The voltage transitions of the pulse source are associated with the polarization reversal and can be controlled with a noninverting Schmitt trigger that toggles at the positive and negative coercive voltages of a ferroelectric capacitor. The final circuit model incorporates such electrical and geometrical parameters as capacitance, remanent spontaneous polarization, coercive field, electrode area, and film thickness of a ferroelectric, thin-film capacitor.

  11. Development of inter- and intragranular stresses during switching of ferroelectric polycrystals

    NARCIS (Netherlands)

    Haug, Anja; Onck, Patrick R.; Van der Giessen, Erik

    2007-01-01

    Ferroelectrics are crystalline inorganic materials consisting of domains with different directions of spontaneous polarization. By application of sufficiently high electric fields, these domains can switch into a common direction, thus making the material piezoelectric. Due to ferroelasticity, the

  12. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, M.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  13. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, Martijn; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  14. Ferroelectricity at the nanoscale basics and applications

    CERN Document Server

    Fridkin, Vladimir

    2014-01-01

    This book examines a wide range of ferroelectric materials. It explains the theoretical background of ultrathin ferroelectric films,  presents applications of ferroelectric materials, and displays the mechanism of switching of nanosized ferroelectric films.

  15. Polarization switching kinetics in ultrathin ferroelectric barium titanate film

    Energy Technology Data Exchange (ETDEWEB)

    Gaynutdinov, R., E-mail: rgaynutdinov@gmail.com [Institute of Crystallography, Russian Academy of Sciences, Moscow 119333 (Russian Federation); Minnekaev, M., E-mail: m.minnekaev@gmail.com [NRNU Moscow Engineering Physics Institute, Moscow 115409 (Russian Federation); Mitko, S., E-mail: sergey_m@ntmdt.ru [NT-MDT Co., Moscow 124482 (Russian Federation); Tolstikhina, A., E-mail: alla@ns.crys.ras.ru [Institute of Crystallography, Russian Academy of Sciences, Moscow 119333 (Russian Federation); Zenkevich, A., E-mail: avzenkevich@mephi.ru [NRNU Moscow Engineering Physics Institute, Moscow 115409 (Russian Federation); NRC Kurchatov Institute, Moscow 123182 (Russian Federation); Ducharme, S., E-mail: sducharme@unl.edu [Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, NE 68588-0299 (United States); Fridkin, V., E-mail: fridkin@ns.crys.ras.ru [Institute of Crystallography, Russian Academy of Sciences, Moscow 119333 (Russian Federation)

    2013-09-01

    The investigation of polarization switching kinetics in an ultrathin barium titanate film reveals true threshold switching at a large coercive electric field, evidence that switching is of intrinsic thermodynamic nature, rather than of extrinsic nature initiated by thermal nucleation, which has no true threshold field. The switching speed of a 7 nm thick epitaxial film exhibits a critical slowing as the threshold is approached from above, a key characteristic of intrinsic switching. In contrast, a bulk crystal exhibits nucleation-initiated switching, which has no threshold, and proceeds even at fields well below the nominal coercive field, which was determined independently from the polarization-electric field hysteresis loop. Previously, this phenomenon was only reported for ultrathin ferroelectric polymer Langmuir–Blodgett films. Since both the thermodynamic coercive field and the intrinsic switching kinetics are derived from the mean field theory of ferroelectricity, we expect that these phenomena will be found in other ferroelectric films at the nanoscale.

  16. Universal ferroelectric switching dynamics of vinylidene fluoride-trifluoroethylene copolymer films

    KAUST Repository

    Hu, Weijin

    2014-04-24

    In this work, switching dynamics of poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)] copolymer films are investigated over unprecedentedly wide ranges of temperature and electric field. Remarkably, domain switching of copolymer films obeys well the classical domain nucleation and growth model although the origin of ferroelectricity in organic ferroelectric materials inherently differs from the inorganic counterparts. A lower coercivity limit of 50 ...MV/m and 180 domain wall energy of 60 ...mJ/m 2 are determined for P(VDF-TrFE) films. Furthermore, we discover in copolymer films an anomalous temperature-dependent crossover behavior between two power-law scaling regimes of frequency-dependent coercivity, which is attributed to the transition between flow and creep motions of domain walls. Our observations shed new light on the switching dynamics of semi-crystalline ferroelectric polymers, and such understandings are critical for realizing their reliable applications.

  17. Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field.

    Science.gov (United States)

    Park, Sung Min; Wang, Bo; Das, Saikat; Chae, Seung Chul; Chung, Jin-Seok; Yoon, Jong-Gul; Chen, Long-Qing; Yang, Sang Mo; Noh, Tae Won

    2018-03-12

    Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient 1 that enables mechanical manipulation of polarization without applying an electrical bias 2,3 . Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip 3,4 . However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO 3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

  18. Domain switching of fatigued ferroelectric thin films

    International Nuclear Information System (INIS)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  19. Acoustic emission mechanism at switching of ferroelectric crystals

    International Nuclear Information System (INIS)

    Belov, V.V.; Morozova, G.P.; Serdobol'skaya, O.Yu.

    1986-01-01

    Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO

  20. Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

    Science.gov (United States)

    Chen, Zibin; Hong, Liang; Wang, Feifei; An, Xianghai; Wang, Xiaolin; Ringer, Simon; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

    2017-12-01

    Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. Here, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb (Mg1 /3Nb2 /3)O3-33 % PbTiO3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.

  1. Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming, and relaxation

    Science.gov (United States)

    Scott, J. F.; Hershkovitz, A.; Ivry, Y.; Lu, H.; Gruverman, A.; Gregg, J. M.

    2017-12-01

    Recent experimental work shows that ferroelectric switching can occur in large jumps in which ferroelastic superdomains switch together, rather than having the numerous smaller ferroelectric domains switch within them. In this sense, the superdomains play a role analogous to that of Abrikosov vortices in thin superconducting films under the Kosterlitz-Thouless framework, which control the dynamics more than individual Cooper pairs within them do. Here, we examine the dynamics of ferroelastic superdomains in ferroelastic ferroelectrics and their role in switching devices such as memories. Jamming of ferroelectric domains in thin films has revealed an unexpected time dependence of t-1/4 at long times (hours), but it is difficult to discriminate between power-law and exponential relaxation. Other aspects of this work, including spatial period doubling of domains, led to a description of ferroelastic domains as nonlinear processes in a viscoelastic medium, which produce folding and metastable kinetically limited states. This ¼ exponent is a surprising agreement with the well-known value of ¼ for coarsening dynamics in viscoelastic media. We try to establish a link between these two processes, hitherto considered unrelated, and with superdomains and domain bundles. We note also that high-Tc superconductors share many of the ferroelastic domain properties discussed here and that several new solar cell materials and metal-insulator transition systems are ferroelastic.

  2. Stochastic multistep polarization switching in ferroelectrics

    Science.gov (United States)

    Genenko, Y. A.; Khachaturyan, R.; Schultheiß, J.; Ossipov, A.; Daniels, J. E.; Koruza, J.

    2018-04-01

    Consecutive stochastic 90° polarization switching events, clearly resolved in recent experiments, are described by a nucleation and growth multistep model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes possible consecutive 90°- and parallel 180° switching events. The model predicts the results of simultaneous time-resolved macroscopic measurements of polarization and strain, performed on a tetragonal Pb (Zr ,Ti ) O3 ceramic in a wide range of electric fields over a time domain of seven orders of magnitude. It allows the determination of the fractions of individual switching processes, their characteristic switching times, activation fields, and respective Avrami indices.

  3. Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2015-01-12

    Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force.

  4. Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

    International Nuclear Information System (INIS)

    Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing

    2015-01-01

    Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force

  5. Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

    Science.gov (United States)

    Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing

    2015-01-01

    Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force.

  6. Space-charge-mediated anomalous ferroelectric switching in P(VDF-TrEE) polymer films

    KAUST Repository

    Hu, Weijin

    2014-11-12

    We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current is revealed to be the dominant leakage mechanism in such organic ferroelectric devices, and electrostatic interactions due to space charges lead to the emergence of anomalous ferroelectric loops. The reliable control of ferroelectric switching in P(VDF-TrEE) copolymers opens doors toward engineering advanced organic memories with tailored switching characteristics.

  7. Room-Temperature Magnetic Switching of the Electric Polarization in Ferroelectric Nanopillars.

    Science.gov (United States)

    Poddar, Shashi; de Sa, Pedro; Cai, Ronggang; Delannay, Laurent; Nysten, Bernard; Piraux, Luc; Jonas, Alain M

    2018-01-23

    Magnetoelectric layers with a strong coupling between ferroelectricity and ferromagnetism offer attractive opportunities for the design of new device architectures such as dual-channel memory and multiresponsive sensors and actuators. However, materials in which a magnetic field can switch an electric polarization are extremely rare, work most often only at very low temperatures, and/or comprise complex materials difficult to integrate. Here, we show that magnetostriction and flexoelectricity can be harnessed to strongly couple electric polarization and magnetism in a regularly nanopatterned magnetic metal/ferroelectric polymer layer, to the point that full reversal of the electric polarization can occur at room temperature by the sole application of a magnetic field. Experiments supported by finite element simulations demonstrate that magnetostriction produces large strain gradients at the base of the ferroelectric nanopillars in the magnetoelectric hybrid layer, translating by flexoelectricity into equivalent electric fields larger than the coercive field of the ferroelectric polymer. Our study shows that flexoelectricity can be advantageously used to create a very strong magnetoelectric coupling in a nanopatterned hybrid layer.

  8. Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors.

    Science.gov (United States)

    Mulaosmanovic, Halid; Ocker, Johannes; Müller, Stefan; Schroeder, Uwe; Müller, Johannes; Polakowski, Patrick; Flachowsky, Stefan; van Bentum, Ralf; Mikolajick, Thomas; Slesazeck, Stefan

    2017-02-01

    The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of interest in ferroelectric memory devices. Although both experimental and theoretical studies on this new ferroelectric system have been undertaken, much remains to be unveiled regarding its domain landscape and switching kinetics. Here we demonstrate that the switching of single domains can be directly observed in ultrascaled ferroelectric field effect transistors. Using models of ferroelectric domain nucleation we explain the time, field and temperature dependence of polarization reversal. A simple stochastic model is proposed as well, relating nucleation processes to the observed statistical switching behavior. Our results suggest novel opportunities for hafnium oxide based ferroelectrics in nonvolatile memory devices.

  9. Evaluation of Ferroelectric Materials for Memory Applications

    Science.gov (United States)

    1990-06-01

    1014 1-Mev neutrons/cm 2 without performance degradation [Ref. 4: p. 14001 . Basically, the radiation hardness of a ferroelectric memory device is...shows this relationship for PZT thin- films [Ref. 29: p. 790, Fig. 6]. 250 ,5200 , toA (Tc-T)m ..? - Tc- 663K ISO m 1.73 ± 0.21 I- I-s 10I - 0 -50 , o)0 I...decreases as the material is brought toward the transition temperature from below and the ratio of the c axes (shorter axes) to the a axes (longer axes

  10. Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

    Science.gov (United States)

    Zhao, Dong; Katsouras, Ilias; Asadi, Kamal; Groen, Wilhelm A.; Blom, Paul W. M.; de Leeuw, Dago M.

    2016-06-01

    A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of intermediate polarization states, formed upon incomplete, or partial, switching, we have systematically studied their retention in capacitors comprising two classic ferroelectric materials, viz. random copolymer of vinylidene fluoride with trifluoroethylene, P(VDF-TrFE), and Pb(Zr,Ti)O3. Each experiment started from a discharged and electrically depolarized ferroelectric capacitor. Voltage pulses were applied to set the given polarization states. The retention was measured as a function of time at various temperatures. The intermediate polarization states are stable over time, up to the Curie temperature. We argue that the remarkable stability originates from the coexistence of effectively independent domains, with different values of polarization and coercive field. A domain growth model is derived quantitatively describing deterministic switching between the intermediate polarization states. We show that by using well-defined voltage pulses, the polarization can be set to any arbitrary value, allowing arithmetic programming. The feasibility of arithmetic programming along with the inherent stability of intermediate polarization states makes ferroelectric materials ideal candidates for multibit data storage.

  11. Ferroelectric switch for a high-power Ka-band active pulse compressor

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay L. [Omega-P, Inc., New Haven, CT (United States)

    2013-12-18

    Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

  12. Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

    Science.gov (United States)

    Jo, Jaesung; Choi, Woo Young; Park, Jung-Dong; Shim, Jae Won; Yu, Hyun-Yong; Shin, Changhwan

    2015-07-08

    Because of the "Boltzmann tyranny" (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal-oxide-semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device-that is, SS ∼ 18 mV/decade (much less than 60 mV/decade) at 300 K-by taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed.

  13. Comparative first-principles studies of prototypical ferroelectric materials by LDA, GGA, and SCAN meta-GGA

    Science.gov (United States)

    Zhang, Yubo; Sun, Jianwei; Perdew, John P.; Wu, Xifan

    2017-07-01

    Originating from a broken spatial inversion symmetry, ferroelectricity is a functionality of materials with an electric dipole that can be switched by external electric fields. Spontaneous polarization is a crucial ferroelectric property, and its amplitude is determined by the strength of polar structural distortions. Density functional theory (DFT) is one of the most widely used theoretical methods to study ferroelectric properties, yet it is limited by the levels of approximations in electron exchange-correlation. On the one hand, the local density approximation (LDA) is considered to be more accurate for the conventional perovskite ferroelectrics such as BaTi O3 and PbTi O3 than the generalized gradient approximation (GGA), which suffers from the so-called super-tetragonality error. On the other hand, GGA is more suitable for hydrogen-bonded ferroelectrics than LDA, which largely overestimates the strength of hydrogen bonding in general. We show here that the recently developed general-purpose strongly constrained and appropriately normed (SCAN) meta-GGA functional significantly improves over the traditional LDA/GGA for structural, electric, and energetic properties of diversely bonded ferroelectric materials with a comparable computational effort and thus enhances largely the predictive power of DFT in studies of ferroelectric materials. We also address the observed system-dependent performances of LDA and GGA for ferroelectrics from a chemical bonding point of view.

  14. Nonvolatile data storage using mechanical force-induced polarization switching in ferroelectric polymer

    International Nuclear Information System (INIS)

    Chen, Xin; Tang, Xin; Chen, Xiang-Zhong; Chen, Yu-Lei; Shen, Qun-Dong; Guo, Xu; Ge, Hai-Xiong

    2015-01-01

    Ferroelectric polymers offer the promise of low-cost and flexible electronic products. They are attractive for information storage due to their spontaneous polarization which is usually switched by electric field. Here, we demonstrate that electrical signals can be readily written on ultra-thin ferroelectric polymer films by strain gradient-induced polarization switching (flexoelectric effect). A force with magnitude as small as 64nN is enough to induce highly localized (40 nm feature size) change in the polarization states. The methodology is capable of realizing nonvolatile memory devices with miniaturized cell size and storage density of tens to hundreds Gbit per square inch

  15. Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates.

    Science.gov (United States)

    Pertsev, N A; Kohlstedt, H

    2010-11-26

    A voltage-controlled resistive switching is predicted for ferromagnetic multilayers and spin valves mechanically coupled to a ferroelectric substrate. The switching between low- and high-resistance states results from the strain-driven magnetization reorientations by about 90°, which are shown to occur in ferromagnetic layers with a high magnetostriction and weak cubic magnetocrystalline anisotropy. Such reorientations, not requiring external magnetic fields, can be realized experimentally by applying moderate electric field to a thick substrate (bulk or membrane type) made of a relaxor ferroelectric having ultrahigh piezoelectric coefficients. The proposed multiferroic hybrids exhibiting giant magnetoresistance may be employed as electric-write nonvolatile magnetic memory cells with nondestructive readout.

  16. Characterization, Modeling, and Energy Harvesting of Phase Transformations in Ferroelectric Materials

    Science.gov (United States)

    Dong, Wenda

    Solid state phase transformations can be induced through mechanical, electrical, and thermal loading in ferroelectric materials that are compositionally close to morphotropic phase boundaries. Large changes in strain, polarization, compliance, permittivity, and coupling properties are typically observed across the phase transformation regions and are phenomena of interest for energy harvesting and transduction applications where increased coupling behavior is desired. This work characterized and modeled solid state phase transformations in ferroelectric materials and assessed the potential of phase transforming materials for energy harvesting applications. Two types of phase transformations were studied. The first type was ferroelectric rhombohedral to ferroelectric orthorhombic observed in lead indium niobate lead magnesium niobate lead titanate (PIN-PMN-PT) and driven by deviatoric stress, temperature, and electric field. The second type of phase transformation is ferroelectric to antiferroelectric observed in lead zirconate titanate (PZT) and driven by pressure, temperature, and electric field. Experimental characterizations of the phase transformations were conducted in both PIN-PMN-PT and PZT in order to understand the thermodynamic characteristics of the phase transformations and map out the phase stability of both materials. The ferroelectric materials were characterized under combinations of stress, electric field, and temperature. Material models of phase transforming materials were developed using a thermodynamic based variant switching technique and thermodynamic observations of the phase transformations. These models replicate the phase transformation behavior of PIN-PMN-PT and PZT under mechanical and electrical loading conditions. The switching model worked in conjunction with linear piezoelectric equations as ferroelectric/ferroelastic constitutive equations within a finite element framework that solved the mechanical and electrical field equations

  17. Switching of both local ferroelectric and magnetic domains in multiferroic Bi0.9La0.1FeO3 thin film by mechanical force.

    Science.gov (United States)

    Jia, Tingting; Kimura, Hideo; Cheng, Zhenxiang; Zhao, Hongyang

    2016-08-22

    Cross-coupling of ordering parameters in multiferroic materials by multiple external stimuli other than electric field and magnetic field is highly desirable from both practical application and fundamental study points of view. Recently, mechanical force has attracted great attention in switching of ferroic ordering parameters via electro-elastic coupling in ferroelectric materials. In this work, mechanical force induced both polarization and magnetization switching were visualized in a polycrystalline multiferroic Bi0.9La0.1FeO3 thin film using a scanning probe microscopy system. The piezoresponse force microscopy and magnetic force microscopy responses suggest that both the ferroelectric domains and the magnetic domains in Bi0.9La0.1FeO3 film could be switched by mechanical force as well as by electric field. High tip stress applied on our thin film is demonstrated as able to induce ferroelastic switching and thus induce both ferroelectric dipole and magnetic spin flipping, as a consequence of electro-elastic coupling and magneto-electric coupling. The demonstration of mechanical force control of both the ferroelectric and the magnetic domains at room temperature provides a new freedom for manipulation of multiferroics and could result in devices with novel functionalities.

  18. Spatially resolved mapping of ferroelectric switching behavior in self-assembled multiferroic nanostructures: strain, size, and interface effects

    Science.gov (United States)

    Rodriguez, Brian J.; Jesse, Stephen; Baddorf, Arthur P.; Zhao, T.; Chu, Y. H.; Ramesh, R.; Eliseev, Eugene A.; Morozovska, Anna N.; Kalinin, Sergei V.

    2007-10-01

    Local ferroelectric polarization switching in multiferroic BiFeO3-CoFe2O4 nanostructures is studied using switching spectroscopy piezoresponse force microscopy (SS-PFM). Dynamic parameters such as the work of switching are found to vary gradually with distance from the heterostructure interfaces, while nucleation and coercive biases are uniform within the ferroelectric phase. We demonstrate that the electrostatic and elastic fields at interfaces do not affect switching and nucleation behavior. Rather, the observed evolution of switching properties is a geometric effect of the heterointerface on the signal generation volume in PFM. This implies that the heterostructures can be successfully used in devices, since interfaces do not act as preferential sites for switching. At the same time, small systematic variations of switching properties within the ferroelectric component can be ascribed to the long-range elastic and electrostatic fields in the heterostructure, which can be visualized in 2D.

  19. Growth and Switching of Ferroelectric Nanocrystals from Ultrathin Film of Copolymer of Vinylidene Fluoride and Trifluoroethylene

    Directory of Open Access Journals (Sweden)

    R. Gaynutdinov

    2011-01-01

    Full Text Available The ferroelectric nanocrystals of the copolymer of vinylidene fluoride and trifluoroethylene P(VDF-TrFE were grown from ultrathin Langmuir-Blodgett (LB films on Si substrate. The annealing of ultrathin LB films with thickness of 3 monolayers (5 nm in air in paraelectric phase at temperature 125∘C was performed. The self-assembly leads to the growth of nanocrystals of ferroelectric copolymer 15–25 nm thick and 100–200 nm in diameter. The nanocrystals presumably belong to orthorhombic space group, where axis 2 is the direction of spontaneous polarization (and normal to substrate. By means of atomic force microscopy (AFM, the kinetics of ferroelectric nanocrystals growth and their switching were investigated. The obtained results confirm the conclusions that copolymer nanocrystals are candidates for high-density nonvolatile storage media devices.

  20. Comment on 'extrinsic versus intrinsic ferroelectric switching : experimental investigations using ultra-thin PVDF Langmuir-Blodgett films'

    NARCIS (Netherlands)

    Naber, R.C.G.; Blom, P.W.M.; de Leeuw, DM

    2006-01-01

    Previous work on ultra-thin P(VDF-TrFE) Langmuir-Blodgett films has indicated a transition from extrinsic to intrinsic ferroelectric switching. The lack of several key features of intrinsic switching in the experimental work reported by Kliem et al argues against intrinsic switching. In this Comment

  1. Domain topology and domain switching kinetics in a hybrid improper ferroelectric

    Science.gov (United States)

    Huang, F.-T.; Xue, F.; Gao, B.; Wang, L. H.; Luo, X.; Cai, W.; Lu, X.-Z.; Rondinelli, J. M.; Chen, L. Q.; Cheong, S.-W.

    2016-05-01

    Charged polar interfaces such as charged ferroelectric walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large two-dimensional conduction. Charged ferroelectric walls, which are energetically unfavourable in general, were found to be mysteriously abundant in hybrid improper ferroelectric (Ca,Sr)3Ti2O7 crystals. From the exploration of antiphase boundaries in bilayer-perovskites, here we discover that each of four polarization-direction states is degenerate with two antiphase domains, and these eight structural variants form a Z4 × Z2 domain structure with Z3 vortices and five distinct types of domain walls, whose topology is directly relevant to the presence of abundant charged walls. We also discover a zipper-like nature of antiphase boundaries, which are the reversible creation/annihilation centres of pairs of two types of ferroelectric walls (and also Z3-vortex pairs) in 90° and 180° polarization switching. Our results demonstrate the unexpectedly rich nature of hybrid improper ferroelectricity.

  2. Nanocharacterization of the negative stiffness of ferroelectric materials

    Czech Academy of Sciences Publication Activity Database

    Skandani, A.A.; Čtvrtlík, Radim; Al-Haik, M.

    2014-01-01

    Roč. 105, č. 8 (2014), "082906-1"-"082906-5" ISSN 0003-6951 R&D Projects: GA TA ČR TA03010743 Institutional support: RVO:68378271 Keywords : ferroelectric materials * negative stiffness * thermomechanical environments Subject RIV: JJ - Other Materials Impact factor: 3.302, year: 2014

  3. Voltage tunability of thermal conductivity in ferroelectric materials

    Science.gov (United States)

    Ihlefeld, Jon; Hopkins, Patrick Edward

    2016-02-09

    A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.

  4. Ferroelectric Polarization Switching Dynamics and Domain Growth of Triglycine Sulfate and Imidazolium Perchlorate

    KAUST Repository

    Ma, He

    2016-04-10

    The weak bond energy and large anisotropic domain wall energy induce many special characteristics of the domain nucleation, growth, and polarization switch in triglycine sulfate (TGS) and imidazolium perchlorate (IM), two typical molecular ferroelectrics. Their domain nucleation and polarization switch are rather slower than those of conventional oxide ferroelectrics, which may be due to the weaker bond energy of hydrogen bond or van der Waals bond than that of ionic bond. These chemical bonds dominate the elastic energy, with the latter being an important component of domain wall energy and playing an important role in domain nucleation and domain growth. The ratio of anisotropic domain wall energy to Gibbs free energy is large in TGS and IM, which allows a favorable domain shape and a special domain evolution under a certain electric field. Therefore, this study not only sheds light on the physical nature but also indicates the application direction for molecular ferroelectrics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  5. Giant quadratic electro-optical effect during polarization switching in ultrathin ferroelectric polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Blinov, L. M., E-mail: lev39blinov@gmail.com; Lazarev, V. V.; Palto, S. P.; Yudin, S. G. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-04-15

    The low-frequency quadratic electro-optical effect with a maximum electro-optical coefficient of g = 8 Multiplication-Sign 10{sup -19} m{sup 2}/V{sup 2} (i.e., four orders of magnitude greater than the standard high-frequency value) has been studied in thin films of ferroelectric polymer PVDF(70%)-TrFE(30%). The observed effect is related to the process of spontaneous polarization switching, during which the electron oscillators of C-F and C-H dipole groups rotate to become parallel to the applied field. As a result, the ellipsoid of the refractive index exhibits narrowing in the direction perpendicular to the field. The field dependence of the electro-optical coefficient g correlates with that of the apparent dielectric permittivity, which can be introduced under the condition of ferroelectric polarization switching. The observed electro-optical effect strongly decreases when the frequency increases up to several hundred hertz. The temperature dependence of the effect exhibits clearly pronounced hysteresis in the region of the ferroelectric phase transition.

  6. Two-dimensional ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Blinov, L M; Fridkin, Vladimir M; Palto, Sergei P [A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russian Federaion (Russian Federation); Bune, A V; Dowben, P A; Ducharme, Stephen [Department of Physics and Astronomy, Behlen Laboratory of Physics, Center for Materials Research and Analysis, University of Nebraska-Linkoln, Linkoln, NE (United States)

    2000-03-31

    The investigation of the finite-size effect in ferroelectric crystals and films has been limited by the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter of {approx}200 A and the thinnest ferroelectric films were {approx}200 A thick, macroscopic sizes on an atomic scale. Langmuir-Blodgett deposition of films one monolayer at a time has produced high quality ferroelectric films as thin as 10 A, made from polyvinylidene fluoride and its copolymers. These ultrathin films permitted the ultimate investigation of finite-size effects on the atomic thickness scale. Langmuir-Blodgett films also revealed the fundamental two-dimensional character of ferroelectricity in these materials by demonstrating that there is no so-called critical thickness; films as thin as two monolayers (1 nm) are ferroelectric, with a transition temperature near that of the bulk material. The films exhibit all the main properties of ferroelectricity with a first-order ferroelectric-paraelectric phase transition: polarization hysteresis (switching); the jump in spontaneous polarization at the phase transition temperature; thermal hysteresis in the polarization; the increase in the transition temperature with applied field; double hysteresis above the phase transition temperature; and the existence of the ferroelectric critical point. The films also exhibit a new phase transition associated with the two-dimensional layers. (reviews of topical problems)

  7. Novel Photovoltaic Devices Using Ferroelectric Material and Colloidal Quantum Dots

    Science.gov (United States)

    Paik, Young Hun

    As the global concern for the financial and environmental costs of traditional energy resources increases, research on renewable energy, most notably solar energy, has taken center stage. Many alternative photovoltaic (PV) technologies for 'the next generation solar cell' have been extensively studied to overcome the Shockley-Queisser 31% efficiency limit as well as tackle the efficiency vs. cost issues. This dissertation focuses on the novel photovoltaic mechanism for the next generation solar cells using two inorganic nanomaterials, nanocrystal quantum dots and ferroelectric nanoparticles. Lead zirconate titanate (PZT) materials are widely studied and easy to synthesize using solution based chemistry. One of the fascinating properties of the PZT material is a Bulk Photovoltaic effect (BPVE). This property has been spotlighted because it can produce very high open circuit voltage regardless of the electrical bandgap of the materials. However, the poor optical absorption of the PZT materials and the required high temperature to form the ferroelectric crystalline structure have been obstacles to fabricate efficient photovoltaic devices. Colloidal quantum dots also have fascinating optical and electrical properties such as tailored absorption spectrum, capability of the bandgap engineering due to the wide range of material selection and quantum confinement, and very efficient carrier dynamics called multiple exciton generations. In order to utilize these properties, many researchers have put numerous efforts in colloidal quantum dot photovoltaic research and there has been remarkable progress in the past decade. However, several drawbacks are still remaining to achieve highly efficient photovoltaic device. Traps created on the large surface area, low carrier mobility, and lower open circuit voltage while increasing the absorption of the solar spectrum is main issues of the nanocrystal based photovoltaic effect. To address these issues and to take the advantages of

  8. Screening effects in ferroelectric resistive switching of BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    S. Farokhipoor

    2014-05-01

    Full Text Available We investigate ferroelectric resistive switching in BiFeO3 thin films by performing local conductivity measurements. By comparing conduction characteristics at artificially up-polarized domains with those at as-grown down-polarized domains, the change in resistance is attributed to the modification of the electronic barrier height at the interface with the electrodes, upon the reversal of the electrical polarization. We also study the effect of oxygen vacancies on the observed conduction and we propose the existence of a different screening mechanism for up and down polarized domains.

  9. Characterisation of ferroelectric bulk materials and thin films

    CERN Document Server

    Cain, Markys G

    2014-01-01

    This book presents a comprehensive review of the most important methods used in the characterisation of piezoelectric, ferroelectric and pyroelectric materials. It covers techniques for the analysis of bulk materials and thick and thin film materials and devices. There is a growing demand by industry to adapt and integrate piezoelectric materials into ever smaller devices and structures. Such applications development requires the joint development of reliable, robust, accurate and - most importantly - relevant and applicable measurement and characterisation methods and models. In the past f

  10. Ferroelectric materials for piezoelectric actuators by optimal design

    International Nuclear Information System (INIS)

    Jayachandran, K.P.; Guedes, J.M.; Rodrigues, H.C.

    2011-01-01

    Research highlights: → Microstructure optimization of ferroelectric materials by stochastic optimization. → Polycrystalline ferroelectrics possess better piezo actuation than single crystals. → Randomness of the grain orientations would enhance the overall piezoelectricity. - Abstract: Optimization methods provide a systematic means of designing heterogeneous materials with tailored properties and microstructures focussing on a specific objective. An optimization procedure incorporating a continuum modeling is used in this work to identify the ideal orientation distribution of ferroelectrics (FEs) for application in piezoelectric actuators. Piezoelectric actuation is dictated primarily by the piezoelectric strain coefficients d iμ . Crystallographic orientation is inextricably related to the piezoelectric properties of FEs. This suggests that piezoelectric properties can be tailored by a proper choice of the parameters which control the orientation distribution. Nevertheless, this choice is complicated and it is impossible to analyze all possible combinations of the distribution parameters or the angles themselves. Stochastic optimization combined with a generalized Monte Carlo scheme is used to optimize the objective functions, the effective piezoelectric coefficients d 31 and d 15 . The procedure is applied to heterogeneous, polycrystalline, FE ceramics which are essentially an aggregate of variously oriented grains (crystallites). Global piezoelectric properties are calculated using the homogenization method at each grain configuration chosen by the optimization algorithm. Optimal design variables and microstructure that would generate polycrystalline configurations that multiply the macroscopic piezoelectricity are identified.

  11. Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO3-δ Films on Silicon.

    Science.gov (United States)

    Gómez, Andrés; Vila-Fungueiriño, José Manuel; Moalla, Rahma; Saint-Girons, Guillaume; Gázquez, Jaume; Varela, María; Bachelet, Romain; Gich, Martí; Rivadulla, Francisco; Carretero-Genevrier, Adrián

    2017-10-01

    Materials that can couple electrical and mechanical properties constitute a key element of smart actuators, energy harvesters, or many sensing devices. Within this class, functional oxides display specific mesoscale responses which often result in great sensitivity to small external stimuli. Here, a novel combination of molecular beam epitaxy and a water-based chemical-solution method is used for the design of mechanically controlled multilevel device integrated on silicon. In particular, the possibility of adding extra functionalities to a ferroelectric oxide heterostructure by n-doping and nanostructuring a BaTiO 3 thin film on Si(001) is explored. It is found that the ferroelectric polarization can be reversed, and resistive switching can be measured, upon a mechanical load in epitaxial BaTiO 3- δ /La 0.7 Sr 0.3 MnO 3 /SrTiO 3 /Si columnar nanostructures. A flexoelectric effect is found, stemming from substantial strain gradients that can be created with moderate loads. Simultaneously, mechanical effects on the local conductivity can be used to modulate a nonvolatile resistive state of the BaTiO 3- δ heterostructure. As a result, three different configurations of the system become accessible on top of the usual voltage reversal of polarization and resistive states. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Tip-induced domain structures and polarization switching in ferroelectric amino acid glycine

    Energy Technology Data Exchange (ETDEWEB)

    Seyedhosseini, E., E-mail: Seyedhosseini@ua.pt; Ivanov, M. [CICECO-Aveiro Institute of Materials and Department of Physics, University of Aveiro, 3810-193 Aveiro (Portugal); Bdikin, I. [TEMA and Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro (Portugal); Vasileva, D. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Kudryavtsev, A. [Moscow State Institute of Radioengineering, Electronics and Automation, 119454 Moscow (Russian Federation); Rodriguez, B. J. [Conway Institute of Biomolecular and Biomedical Research and School of Physics, University College Dublin, Dublin (Ireland); Kholkin, A. L. [CICECO-Aveiro Institute of Materials and Department of Physics, University of Aveiro, 3810-193 Aveiro (Portugal); Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2015-08-21

    Bioorganic ferroelectrics and piezoelectrics are becoming increasingly important in view of their intrinsic compatibility with biological environment and biofunctionality combined with strong piezoelectric effect and a switchable polarization at room temperature. Here, we study tip-induced domain structures and polarization switching in the smallest amino acid β-glycine, representing a broad class of non-centrosymmetric amino acids. We show that β-glycine is indeed a room-temperature ferroelectric and polarization can be switched by applying a bias to non-polar cuts via a conducting tip of atomic force microscope (AFM). Dynamics of these in-plane domains is studied as a function of an applied voltage and pulse duration. The domain shape is dictated by polarization screening at the domain boundaries and mediated by growth defects. Thermodynamic theory is applied to explain the domain propagation induced by the AFM tip. Our findings suggest that the properties of β-glycine are controlled by the charged domain walls which in turn can be manipulated by an external bias.

  13. Stress-Enhanced Ferroelectric Materials and Structures

    National Research Council Canada - National Science Library

    Haertling, Gene

    1997-01-01

    .... The Rainbow and Cerambow actuator technologies are relatively recent materials developments involving new processing techniques for preparing pre-stressed piezoelectric and electrostrictive ceramic...

  14. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene ultrathin films

    Directory of Open Access Journals (Sweden)

    ChangLi Liu

    2016-05-01

    Full Text Available The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene (P(VDF-TrFE films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene:poly(styrene sulfonic (PEDOT-PSSH as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  15. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, ChangLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Wang, XueJun [Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Zhang, XiuLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Du, XiaoLi [School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Xu, HaiSheng, E-mail: hsxu@ecust.edu.cn [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Kunshan Hisense Electronics Co., Ltd., Kunshan, Jiangsu 215300 (China)

    2016-05-15

    The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  16. Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

    Science.gov (United States)

    Cao, Ye; Morozovska, Anna; Kalinin, Sergei V.

    2017-11-01

    Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. We show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressure and film thickness with nontrivial topology or switchable and nonswitchable regions.

  17. Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.

    Science.gov (United States)

    Schroeder, Uwe; Richter, Claudia; Park, Min Hyuk; Schenk, Tony; Pešić, Milan; Hoffmann, Michael; Fengler, Franz P G; Pohl, Darius; Rellinghaus, Bernd; Zhou, Chuanzhen; Chung, Ching-Chang; Jones, Jacob L; Mikolajick, Thomas

    2018-03-05

    Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now. However, no comprehensive overview that links structural properties to the electrical performance of the films in detail is available for lanthanide-doped hafnia. La:HfO 2 appears to be a material with a broad window of process parameters, and accordingly, by optimization of the La content in the layer, it is possible to improve the performance of the material significantly. Variations of the La concentration leads to changes in the crystallographic structure in the bulk of the films and at the interfaces to the electrode materials, which impacts the spontaneous polarization, internal bias fields, and with this the field cycling behavior of the capacitor structure. Characterization results are compared to other dopants like Si, Al, and Gd to validate the advantages of the material in applications such as semiconductor memory devices.

  18. Ferroelectric Domain Scaling and Switching in Ultrathin BiFeO3 Films Deposited on Vicinal Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Shelke, Vilas [University of Alabama, Tuscaloosa; Mazumdar, Dipanjan [University of Alabama, Tuscaloosa; Jesse, Stephen [ORNL; Kalinin, Sergei V [ORNL; Baddorf, Arthur P [ORNL; Gupta, Dr. Arunava [University of Alabama, Tuscaloosa

    2012-01-01

    We report on electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO{sub 3} films deposited on [110] vicinal substrates. The BiFeO{sub 3} films of variable thickness were deposited with SrRuO{sub 3} bottom layer using the pulsed laser deposition technique. The domains are engineered into preferentially oriented patterns due to substrate vicinality along the [110] direction. The domain width scales closely with the square root of film thickness, in agreement with the Landau-Lifschitz-Kittel (LLK) law. Switching spectroscopy piezo-response force microscopy provides clear evidence for the ferroelectric switching behavior in all the films.

  19. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  20. Frontiers of ferroelectricity a special issue of the journal of materials science

    CERN Document Server

    Lang, Sidney B

    2007-01-01

    The book presents theory, fundamentals and some applications of ferroelectricy. The 24 chapters comprise reviews and research reports covering the spectrum of ferroelectricity. It is intended to describe the current levels of understanding of various aspects of ferroelectricity as presented by authorities in the field. Topics include relaxors, piezoelectrics, microscale and nanoscale studies, polymers and composites, unusual properties, and techniques and devices. The information in this book is intended for physicists, engineers and materials scientists working with ferroelectric materials including ceramics, single crystals, polymers, composites and even some biological materials.

  1. Synthesis, characterization, properties, and applications of nanosized ferroelectric, ferromagnetic, or multiferroic materials

    International Nuclear Information System (INIS)

    Dhak, Debasis; Das, Soma; Communication Engineering.); Dhak, Prasanta

    2015-01-01

    Recently, there has been an enormous increase in research activity in the field of ferroelectrics and ferromagnetics especially in multiferroic materials which possess both ferroelectric and ferromagnetic properties simultaneously. However, the ferroelectric, ferromagnetic, and multiferroic properties should be further improved from the utilitarian and commercial viewpoints. Nanostructural materials are central to the evolution of future electronics and information technologies. Ferroelectrics and ferromagnetics have already been established as a dominant branch in electronics sector because of their diverse applications. The ongoing dimensional downscaling of materials to allow packing of increased numbers of components into integrated circuits provides the momentum for evolution of nanostructural devices. Nanoscaling of the above materials can result in a modification of their functionality. Furthermore, nanoscaling can be used to form high density arrays of nanodomain nanostructures, which is desirable for miniaturization of devices

  2. Polarization enhancement and ferroelectric switching enabled by interacting magnetic structures in DyMnO3 thin films

    KAUST Repository

    Lu, Chengliang

    2013-12-02

    The mutual controls of ferroelectricity and magnetism are stepping towards practical applications proposed for quite a few promising devices in which multiferroic thin films are involved. Although ferroelectricity stemming from specific spiral spin ordering has been reported in highly distorted bulk perovskite manganites, the existence of magnetically induced ferroelectricity in the corresponding thin films remains an unresolved issue, which unfortunately halts this step. In this work, we report magnetically induced electric polarization and its remarkable response to magnetic field (an enhancement of ?800% upon a field of 2 Tesla at 2 K) in DyMnO3 thin films grown on Nb-SrTiO3 substrates. Accompanying with the large polarization enhancement, the ferroelectric coercivity corresponding to the magnetic chirality switching field is significantly increased. A picture based on coupled multicomponent magnetic structures is proposed to understand these features. Moreover, different magnetic anisotropy related to strain-suppressed GdFeO 3-type distortion and Jahn-Teller effect is identified in the films.

  3. Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3 thin films

    Science.gov (United States)

    Lu, Zeng-Xing; Song, Xiao; Zhao, Li-Na; Li, Zhong-Wen; Lin, Yuan-Bin; Zeng, Min; Zhang, Zhang; Lu, Xu-Bing; Wu, Su-Juan; Gao, Xing-Sen; Yan, Zhi-Bo; Liu, Jun-Ming

    2015-10-01

    We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current-voltage (I-V) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures (originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures (> 253 K), the I-V behaviors are governed by both space-charge-limited conduction (SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of > 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272078 and 51332007), the State Key Program for Basic Research of China (Grant No 2015CB921202), the Guangdong Provincial Universities and Colleges Pearl River Scholar Funded Scheme, China (2014), the International Science & Technology Cooperation Platform Program of Guangzhou, China (Grant No. 2014J4500016), and the Program for Changjiang Scholars and Innovative Research Team in University of China (Grant No. IRT1243).

  4. A quantum informed continuum model for ferroelectric and flexoelectric materials

    Science.gov (United States)

    Oates, William S.

    2013-04-01

    Correlations between quantum mechanics and continuum mechanics are investigated by exploring relations based on the electron density and electrostatic forces within an atomic lattice in ferroelectric materials. Theoretically, it is shown that anisotropic stress is dependent upon electrostatic forces that originate from the quadrupole density. This relation is directly determined if the nuclear charge and electron density are known. The result is an extension of the Hellmann-Feynman theory used to quantify stresses based on electrostatics. Further, flexoelectricity is found to be proportional to the next two higher order poles. These relations are obtained by correlating a nucleus-nucleus potential and nucleus-electron potential with the deformation gradient and second order gradient. An example is given for barium titanate by solving the electron density using density function theory (DFT) calculations. Changes in energy and stress under different lattice geometric constraints are modeled and compared to nonlinear continuum mechanics to understand differences in formulating a model directly from DFT calculations versus a nonlinear continuum model that uses polarization versus the quadrupole density as the order parameter.

  5. All-optical switching based on a tunable Fano-like resonance in nonlinear ferroelectric photonic crystals

    International Nuclear Information System (INIS)

    Chai, Zhen; Hu, Xiaoyong; Gong, Qihuang

    2013-01-01

    A low-power all-optical switching is presented based on the all-optical tunable Fano-like resonance in a two-dimensional nonlinear ferroelectric photonic crystal made of polycrystalline lithium niobate. An asymmetric Fano-like line shape is achieved in the transmission spectrum by using two cascaded and uncoupled photonic crystal microcavities. The physical mechanism underlying the all-optical switching is attributed to the dynamic shift of the Fano-like resonance peak caused by variations in the dispersion relations of the photonic crystal structure induced by pump light. A large switching efficiency of 61% is reached under excitation of a weak pump light with an intensity as low as 1 MW cm −2 . (paper)

  6. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures (Postprint)

    Science.gov (United States)

    2016-09-01

    reliable and compact devices. Attention has therefore been turned to magnetic/high-k dielectric bilayers such as Fe/MgO11,40, CoFe /MgO41,42, Co/GdOx20...VDF-TrFE)12, and CoFe /BST44, where the functionality is similar to recently proposed magnetic/high-k dielectric stacks but the associated volatile...polarization such as PZT, BiFeO3 , or doped HfO2. Our results thus provide a pathway towards ferroelectric switching of magnetism that could be useful for

  7. Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

    Science.gov (United States)

    Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

    2018-05-01

    A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

  8. Ferroelectric and piezoelectric thin films and their applications for integrated capacitors, piezoelectric ultrasound transducers and piezoelectric switches

    International Nuclear Information System (INIS)

    Klee, M; Boots, H; Kumar, B; Heesch, C van; Mauczok, R; Keur, W; Wild, M de; Esch, H van; Roest, A L; Reimann, K; Leuken, L van; Wunnicke, O; Zhao, J; Schmitz, G; Mienkina, M; Mleczko, M; Tiggelman, M

    2010-01-01

    Ferroelectric and piezoelectric thin films are gaining more and more importance for the integration of high performance devices in small modules. High-K 'Integrated Discretes' devices have been developed, which are based on thin film ferroelectric capacitors integrated together with resistors and ESD protection diodes in a small Si-based chip-scale package. Making use of ferroelectric thin films with relative permittivity of 950-1600 and stacking processes of capacitors, extremely high capacitance densities of 20-520 nF/mm 2 , high breakdown voltages up to 140 V and lifetimes of more than 10 years at operating voltages of 5 V and 85 deg. C are achieved. Thin film high-density capacitors play also an important role as tunable capacitors for applications such as tuneable matching circuits for RF sections of mobile phones. The performance of thin film tuneable capacitors at frequencies between 1 MHz and 1 GHz is investigated. Finally thin film piezoelectric ultrasound transducers, processed in Si- related processes, are attractive for medical imaging, since they enable large bandwidth (>100%), high frequency operation and have the potential to integrate electronics. With these piezoelectric thin film ultrasound transducers real time ultrasound images have been realized. Finally, piezoelectric thin films are used to manufacture galvanic MEMS switches. A model for the quasi-static mechanical behaviour is presented and compared with measurements.

  9. Oxide Thin Films and Nano-heterostructures for Microelectronics (MOS Structures, Ferroelectric Materials and Multiferroic Heterostructures)

    Science.gov (United States)

    Pintilie, I.; Pintilie, L.; Filip, L. D.; Nistor, L. C.; Ghica, C.

    Oxide materials are becoming of increasing interest due to their large variety of physical properties such as dielectric, magnetism, superconductivity, conductivity, ferroelectricity, multiferroism, etc. In addition, interfacing oxides with other materials is conferring new or better device functionalities. The main physical properties of oxides interfaces and their impact on the electrical properties of interest for microelectronic applications are presented. Further on, this subchapter is also devoted to the investigation and understanding of interface effects observed in heterostructures containing linear (SiO2) and non-linear (ferroelectrics) dielectrics in combination with wide-band gap semiconductor materials (e.g. ZnO and SiC) with special emphasis on size effects, interface quality and the opportunity to control the emergent phenomena in Metal-Oxide-Semiconductor (MOS) and Metal-Ferroelectric-Semiconductor (MFS) materials systems.

  10. Flexoelectricity in Nanoscale Ferroelectrics

    Science.gov (United States)

    Catalan, Gustau

    2012-02-01

    All ferroelectrics are piezoelectric and thus have an intrinsic coupling between polarization and strain. There exists an additional electromechanical coupling, however, between polarization and strain gradients. Strain gradients are intrinsically vectorial fields and, therefore, they can in principle be used to modify both the orientation and the sign of the polarization, thanks to the coupling known as flexoelectricity. Flexoelectricity is possible even in paraelectric materials, but is generally stronger in ferroelectrics on account of their high permittivity (the flexoelectric coefficient is proportional to the dielectric constant). Moreover, strain gradients can be large at the nanoscale due to the smallness of the relaxation length and, accordingly, strong flexoelectric effects can be expected in nanoscale ferroelectrics. In this talk we will present two recent results that highlight the above features. In the first part, I will show how polarization tilting can be achieved in a nominally tetragonal ferroelectric (PbTiO3) thanks to the internal flexoelectric fields generated in nano-twinned epitaxial thin films. Flexoelectricity thus offers a purely physical means of achieving rotated polarizations, which are thought to be useful for enhanced piezoelectricity. In the second part, we will show how the large strain gradients generated by pushing the sharp tip of an atomic force microscope against the surface of a thin ferroelectric film can be used to actively switch its polarity by 180^o. This enables a new concept for ``multiferroic'' memory operation in which the memory bits are written mechanically and read electrically.

  11. Growth and characterization of epitaxial thin films and multiferroic heterostructures of ferromagnetic and ferroelectric materials

    Science.gov (United States)

    Mukherjee, Devajyoti

    Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

  12. Conformal growth method of ferroelectric materials for multifunctional composites

    Science.gov (United States)

    Bowland, Christopher Charles

    Multifunctional composites are the next generation of composites and aim to simultaneously meet multiple performance objectives to create system-level performance enhancements. Current fiber-reinforced composites have offered improved efficiency and performance through weight reduction and increased strength. However, these composites satisfy singular performance objectives. Therefore, the concept of multifunctional composites was developed as an approach to create components in a system that serve multiple functions. These composites aim to reduce the required components in a system by integrating unifunctional components together thus reducing the weight and complexity of the system as a whole. This work offers an approach to create multifunctional composites through the development of a structural, multifunctional fiber. This is achieved by synthesizing a ferroelectric material on the surface of carbon fiber. In this work, a two-step hydrothermal reaction is developed for synthesizing a conformal film of barium titanate (BaTiO3) on the surface of carbon fiber. A fundamental understanding of this hydrothermal process is performed on planar substrates leading to the development of processing parameters that result in epitaxial-type growth of highly-aligned BaTiO3 nanowires. This work establishes the hydrothermal reaction as a powerful synthesis technique for generating nanostructured BaTiO3 on carbon fiber creating a novel, multifunctional fiber. A reaction optimization process leads to the development of parameters that stabilize tetragonal phase BaTiO3 without the need for subsequent heat treatments. The application potential of these fibers is illustrated with both single fibers and woven fabrics. Single fiber cantilever beams are fabricated and subjected to vibrations to determine its voltage output with the ultimate goal of producing an air flow sensor. Carbon fiber reinforced composite integration is carried out by scaling up the hydrothermal reaction to

  13. Exploring Mechanisms of Ferroelectric Switching in Real Time Using In Situ TEM

    Science.gov (United States)

    Winkler, Christopher Reid

    detail. The elastic modulus of the three-phase material is approximated by first considering only the polymer-ceramic composite mixture, and then incorporating porosity into the solid composite model. A new model has been developed for approximating the changing elastic modulus of porous polymers undergoing quasi-static compression, which induces the collapsing pores. Necessary material constants were obtained from experimental data published in literature. The permittivity of the paraelectric polymer matrix is modeled, accounting for piezodielectric effects imposed by external pressure and thermally induced stresses caused by substrate pinning. Similarly, the ferroelectric ceramic filler is modeled, considering changes in polarization caused by thermally induced phase transformations in the crystal structure. The final model is evaluated against experimental data, providing insight into composition and microstructure effects on the sensor response.

  14. Reverse bistable effect in ferroelectric liquid crystal devices with ultra-fast switching at low driving voltage.

    Science.gov (United States)

    Guo, Qi; Zhao, Xiaojin; Zhao, Huijie; Chigrinov, V G

    2015-05-15

    In this Letter, reverse bistable effect with deep-sub-millisecond switching time is first reported in ferroelectric liquid crystal (FLC) devices using a homogeneous photo-alignment technique. It is indicated by our experimental results that both the anchoring energy and the dielectric property of the FLC's alignment layer is critical for the existence of the reverse bistable effect. In addition, with the derived criteria of the reverse bistable effect, we quantitatively analyze the switching dynamics of the reverse bistable FLC and the transition condition between the traditional bistability and our presented reverse bistability. Moreover, the fabricated FLC device exhibits an ultra-fast switching of ∼160  μs and a high contrast ratio of 1000:1, both of which were measured at a low driving voltage of 11 V. The featured deep-sub-millisecond switching time is really advantageous for our presented reverse bistable FLC devices, which enables a significant quality improvement of the existing optical devices, as well as a wide range of new applications in photonics and display areas.

  15. Thermochromic materials research for optical switching

    International Nuclear Information System (INIS)

    Lee, J.C.; Jorgenson, G.V.; Lin, R.J.

    1986-01-01

    Reactive-ion-beam-sputtering (RIBS) is used to deposit doped vanadium dioxide (V/sub 1-x/M/sub x/O/sub 2/), where M is a dopant that lowers the transition temperature (T/sub t/) from that of stoichiometric VO/sub 2/. The objective is to synthesize a material that will passively switch between a heat-transmitting-and a heat-reflecting-state at specific design temperatures in the human comfort range. The films are deposited at elevated temperature (>700K) onto glass and sapphire substrates for spectrophotometric evaluation above and below T/sub t/. Then by analyzing the deposited films via EDAX, correlations between film composition and passive solar switching performance are made. Also concepts for synthesizing suitable crystallites of such materials are described. These crystallites could act as switchable pigments for throchromic solar paint

  16. Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Matzen, Sylivia [University of Groningen, The Netherlands; Nesterov, Okeksiy [ORNL; Rispens, Gregory [University of Groningen, The Netherlands; Heuver, J. A. [University of Groningen, The Netherlands; Bark, C [University of Wisconsin, Madison; Biegalski, Michael D [ORNL; Christen, Hans M [ORNL; Noheda, Beatriz [University of Groningen, The Netherlands

    2014-01-01

    Nanoscale ferroelectrics, the active elements of a variety of nanoelectronic devices, develop denser and richer domain structures than the bulk counterparts. With shrinking device sizes understanding and controlling domain formation in nanoferroelectrics is being intensely studied. Here we show that a precise control of the epitaxy and the strain allows stabilizing a hierarchical domain architecture in PbxSr1-xTiO3 thin films, showing periodic, purely in-plane polarized, ferroelectric nano-domains that can be switched by a scanning probe.

  17. Switching kinetics of a relaxor ferroelectric Sr0.75Ba0.25Nb2O6 observed by the second harmonic generation method

    International Nuclear Information System (INIS)

    Volk, Tatyana; Isakov, Dmitry; Belsley, Michael Scott; Ivleva, Lyudmila

    2009-01-01

    In this work we present a study of the ferroelectric switching kinetic process in strontium-barium niobate (SBN). The kinetics of polarization deduced from the dynamics of the diffuse second harmonic generation is in good qualitative agreement with thekinetics observed by more traditional polarization methods. Our work highlights the specific characteristics of polarization reversal in SBN, which is fundamentally different from that which occurs in model ferroelectrics. The presented optical measurements of the polarization processes provide several experimental advantages over traditional electrical measurements. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Effective nanometer airgap of NEMS devices using negative capacitance of ferroelectric materials.

    Science.gov (United States)

    Masuduzzaman, Muhammad; Alam, Muhammad Ashraful

    2014-06-11

    Nanoelectromechnical system (NEMS) is seen as one of the most promising candidates for next generation extreme low power electronics that can operate as a versatile switch/memory/sensor/display element. One of the main challenges toward this goal lies in the fabrication difficulties of ultrascaled NEMS required for high density integrated circuits. It is generally understood that fabricating and operating a NEMS with an airgap below a few nanometer will be extremely challenging due to surface roughness, nonideal forces, tunneling, etc. Here, we show that by cascading a NEMS with a ferroelectric capacitor, operating in the negative capacitance regime, the effective airgap can be reduced by almost an order of magnitude, without the need to reduce the airgap physically. This would not only reduce the pull-in voltage to sub-1 V regime, but also would offer a set of characteristics which are difficult/impossible to achieve otherwise. For example, one can reduce/increase the classical travel range, flip the traditional stable-unstable regime of the electrode, get a negative pull-out voltage, and thus, center the hysteresis around zero volt. Moreover, one can also operate the combination as an effective ferroelectric memory with much reduced switching voltages. These characteristics promise dramatic saving in power for NEMS-based switching, memory, and other related applications.

  19. An I-integral method for crack-tip intensity factor variation due to domain switching in ferroelectric single-crystals

    Science.gov (United States)

    Yu, Hongjun; Wang, Jie; Shimada, Takahiro; Wu, Huaping; Wu, Linzhi; Kuna, Meinhard; Kitamura, Takayuki

    2016-09-01

    In the present study, an I-integral method is established for solving the crack-tip intensity factors of ferroelectric single-crystals. The I-integral combined with the phase field model is successfully used to investigate crack-tip intensity factor variations due to domain switching in ferroelectricity subjected to electromechanical loadings, which exhibits several advantages over previous methods based on small-scale switching. First, the shape of the switching zone around a crack tip is predicted by the time-dependent Ginzburg-Landau equation, which does not require preset energy-based switching criterion. Second, the I-integral can directly solve the crack-tip intensity factors and decouple the crack-tip intensity factors of different modes based on superimposing an auxiliary state onto an actual state. Third, the I-integral is area-independent, namely, the I-integral is not affected by the integral area size, the polarization distributions, or domain walls. This makes the I-integral applicable to large-scale domain switching. To this end, the electro-elastic field intensity factors of an impermeable crack in PbTiO3 ferroelectric single crystals are evaluated under electrical, mechanical, and combined loading. The intensity factors obtained by the I-integral agree well with those obtained by the extrapolation technique. From numerical results, the following conclusions can be drawn with respect to fracture behavior of ferroelectrics under large-scale switching. Under displacement controlled mechanical loading, the stress intensity factors (SIFs) decrease monotonically due to the domain switching process, which means a crack tip shielding or effective switching-induced toughening occurs. If an external electric field is applied, the electric displacement intensity factor (EDIF) increases in all cases, i.e., the formed domain patterns enhance the electric crack tip loading. The energy release rate, expressed by the crack-tip J-integral, is reduced by the domain

  20. Filamentary model in resistive switching materials

    Science.gov (United States)

    Jasmin, Alladin C.

    2017-12-01

    The need for next generation computer devices is increasing as the demand for efficient data processing increases. The amount of data generated every second also increases which requires large data storage devices. Oxide-based memory devices are being studied to explore new research frontiers thanks to modern advances in nanofabrication. Various oxide materials are studied as active layers for non-volatile memory. This technology has potential application in resistive random-access-memory (ReRAM) and can be easily integrated in CMOS technologies. The long term perspective of this research field is to develop devices which mimic how the brain processes information. To realize such application, a thorough understanding of the charge transport and switching mechanism is important. A new perspective in the multistate resistive switching based on current-induced filament dynamics will be discussed. A simple equivalent circuit of the device gives quantitative information about the nature of the conducting filament at different resistance states.

  1. Deterministic control of ferroelastic switching in multiferroic materials

    NARCIS (Netherlands)

    Balke, N.; Choudhury, S.; Jesse, S.; Huijben, Mark; Chu, Y.H.; Baddorf, A.P.; Chen, L.Q.; Ramesh, R.; Kalinin, S.V.

    2009-01-01

    Multiferroic materials showing coupled electric, magnetic and elastic orderings provide a platform to explore complexity and new paradigms for memory and logic devices. Until now, the deterministic control of non-ferroelectric order parameters in multiferroics has been elusive. Here, we demonstrate

  2. A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

    Directory of Open Access Journals (Sweden)

    Saeid Marjani

    2016-09-01

    Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

  3. Ferroelectric ultrathin perovskite films

    Science.gov (United States)

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  4. Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

    Science.gov (United States)

    Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

    2015-07-23

    We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

  5. Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

    Science.gov (United States)

    Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

    2015-07-01

    We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

  6. Ferroelectric devices

    CERN Document Server

    Uchino, Kenji

    2009-01-01

    Updating its bestselling predecessor, Ferroelectric Devices, Second Edition assesses the last decade of developments-and setbacks-in the commercialization of ferroelectricity. Field pioneer and esteemed author Uchino provides insight into why this relatively nascent and interdisciplinary process has failed so far without a systematic accumulation of fundamental knowledge regarding materials and device development.Filling the informational void, this collection of information reviews state-of-the-art research and development trends reflecting nano and optical technologies, environmental regulat

  7. Mechanical writing of ferroelectric polarization.

    Science.gov (United States)

    Lu, H; Bark, C-W; Esque de los Ojos, D; Alcala, J; Eom, C B; Catalan, G; Gruverman, A

    2012-04-06

    Ferroelectric materials are characterized by a permanent electric dipole that can be reversed through the application of an external voltage, but a strong intrinsic coupling between polarization and deformation also causes all ferroelectrics to be piezoelectric, leading to applications in sensors and high-displacement actuators. A less explored property is flexoelectricity, the coupling between polarization and a strain gradient. We demonstrate that the stress gradient generated by the tip of an atomic force microscope can mechanically switch the polarization in the nanoscale volume of a ferroelectric film. Pure mechanical force can therefore be used as a dynamic tool for polarization control and may enable applications in which memory bits are written mechanically and read electrically.

  8. Mechanical Writing of Ferroelectric Polarization

    Science.gov (United States)

    Lu, H.; Bark, C.-W.; Esque de los Ojos, D.; Alcala, J.; Eom, C. B.; Catalan, G.; Gruverman, A.

    2012-04-01

    Ferroelectric materials are characterized by a permanent electric dipole that can be reversed through the application of an external voltage, but a strong intrinsic coupling between polarization and deformation also causes all ferroelectrics to be piezoelectric, leading to applications in sensors and high-displacement actuators. A less explored property is flexoelectricity, the coupling between polarization and a strain gradient. We demonstrate that the stress gradient generated by the tip of an atomic force microscope can mechanically switch the polarization in the nanoscale volume of a ferroelectric film. Pure mechanical force can therefore be used as a dynamic tool for polarization control and may enable applications in which memory bits are written mechanically and read electrically.

  9. Polymer Ferroelectric Memory for Flexible Electronics

    KAUST Repository

    Khan, Mohd Adnan

    2013-11-01

    With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

  10. Charge trap flash memory using ferroelectric materials as a blocking layer

    Science.gov (United States)

    Seo, Yujeong; An, Ho-Myoung; Yeong Song, Min; Geun Kim, Tae

    2012-04-01

    In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr0.7Bi2.3Nb2O9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (105 P/E cycles) with comparable retention properties.

  11. Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

    Science.gov (United States)

    Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

    2018-03-01

    For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical–electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this. ).

  12. Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

    Energy Technology Data Exchange (ETDEWEB)

    Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

    2018-01-25

    For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.

  13. Role of oxygen disorder in the ferroelectric phase transitions for various materials

    International Nuclear Information System (INIS)

    Pasciak, Marek; Goossens, Darren J.; Welberry, Richard T.

    2009-01-01

    Full text: The nature of ferroelectric phase transitions in many materials have been questioned for many years. Whereas some methods provide definitive evidence of mode softening, other methods, such as local structure probes, indicate the existence of disorder in the paraelectric phase [1]. It is now widely accepted, that the ferroelectric phase transition usually has two components - soft-mode displacive and order-disorder. The latter leads inevitably to some form of pretransitional clusters in the paraelectric phase [2]. In relaxor ferroelectrics, in which disorder drives the transformation, such polar clusters can exist over a wide range of temperatures. Diffuse scattering is a powerful tool for studying such disorder and also for studying short-range order correlations in atomic displacements [3]. In this work we concentrate on the role of oxygens in various materials. By different means of molecular simulations we build models in which the oxygens constitute a framework for short range order correlations. This leads to a discussion of the differences between x-ray and neutron diffuse scattering patterns that may arise due to the disorder of oxygens.

  14. Thickness Dependence of Switching Behavior in Ferroelectric BiFeO3 Thin Films: A Phase-Field Simulation

    Directory of Open Access Journals (Sweden)

    Guoping Cao

    2017-11-01

    Full Text Available A phase-field approach to the analysis of the thickness effects in electric-field-induced domain switching in BiFeO3 thin films has been formulated. Time evolutions of domain switching percentage for films with different thicknesses were explored to reveal the primary switching path and its dependence on film thickness. In addition, hysteresis loop for these films were calculated to obtain their coercive fields. Results show a nonlinear thickness dependence of coercive field for ultrathin films. A parametric study of the interactions between film thickness, coercive field, current-voltage (I-V response, and polarization switching behavior is herein discussed, which could provide physical insights into materials engineering.

  15. Multistability in Bistable Ferroelectric Materials toward Adaptive Applications

    NARCIS (Netherlands)

    Ghosh, Anirban; Koster, Gertjan; Rijnders, Augustinus J.H.M.

    2016-01-01

    Traditionally thermodynamically bistable ferroic materials are used for nonvolatile operations based on logic gates (e.g., in the form of field effect transistors). But, this inherent bistability in these class of materials limits their applicability for adaptive operations. Emulating biological

  16. Ferroelectric Negative Capacitance Domain Dynamics

    OpenAIRE

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2017-01-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transien...

  17. Examination of the possibility of negative capacitance using ferroelectric materials in solid state electronic devices.

    Science.gov (United States)

    Krowne, C M; Kirchoefer, S W; Chang, W; Pond, J M; Alldredge, L M B

    2011-03-09

    We show here, using fundamental energy storage relationships for capacitors, that there are severe constraints upon what can be realized utilizing ferroelectric materials as FET dielectrics. A basic equation governing all small signal behavior is derived, a negative capacitance quality factor is defined based upon it, and thousands of carefully measured devices are evaluated. We show that no instance of negative capacitance occurs within our huge database. Furthermore, we demonstrate that highly nonlinear biasing behavior in a series stack could be misinterpreted as giving a negative capacitance.

  18. Switching behaviour of modulated ferroelectrics: the kinetics of the field induced lock-in transition in K{sub 2}SeO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Leist, J; Gibhardt, H; Hradil, K; Eckold, G [Institute of Physical Chemistry, Georg-August-University of Goettingen (Germany)

    2011-08-03

    The field induced switching process across the ferroelectric lock-in transition in K{sub 2}SeO{sub 4} has been studied on a millisecond timescale using stroboscopic neutron diffraction. The time evolution of both the first and the third order satellites was examined. The time constants are found to vary with temperature between 0.2 and 1.2 ms. This is an order of magnitude faster than in the isostructural Rb{sub 2}ZnCl{sub 4}. Moreover, the time dependence of the satellite's linewidth provides information about the evolution of the coherence of the modulated structure.

  19. Snapshot Mueller matrix polarimetry by wavelength polarization coding and application to the study of switching dynamics in a ferroelectric liquid crystal cell.

    Directory of Open Access Journals (Sweden)

    Le Jeune B.

    2010-06-01

    Full Text Available This paper describes a snapshot Mueller matrix polarimeter by wavelength polarization coding. This device is aimed at encoding polarization states in the spectral domain through use of a broadband source and high-order retarders. This allows one to measure a full Mueller matrix from a single spectrum whose acquisition time only depends on the detection system aperture. The theoretical fundamentals of this technique are developed prior to validation by experiments. The setup calibration is described as well as optimization and stabilization procedures. Then, it is used to study, by time-resolved Mueller matrix polarimetry, the switching dynamics in a ferroelectric liquid crystal cell.

  20. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

    Science.gov (United States)

    Jiang, Jun; Bai, Zi Long; Chen, Zhi Hui; He, Long; Zhang, David Wei; Zhang, Qing Hua; Shi, Jin An; Park, Min Hyuk; Scott, James F.; Hwang, Cheol Seong; Jiang, An Quan

    2018-01-01

    Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm.

  1. Contact materials for nanowire devices and nanoelectromechanical switches

    KAUST Repository

    Hussain, Muhammad Mustafa

    2011-02-01

    The impact of contact materials on the performance of nanostructured devices is expected to be signifi cant. This is especially true since size scaling can increase the contact resistance and induce many unseen phenomenon and reactions that greatly impact device performance. Nanowire and nanoelectromechanical switches are two emerging nanoelectronic devices. Nanowires provide a unique opportunity to control the property of a material at an ultra-scaled dimension, whereas a nanoelectromechanical switch presents zero power consumption in its off state, as it is physically detached from the sensor anode. In this article, we specifi cally discuss contact material issues related to nanowire devices and nanoelectromechanical switches.

  2. Ferroelectric mesocrystals of bismuth sodium titanate: formation mechanism, nanostructure, and application to piezoelectric materials.

    Science.gov (United States)

    Hu, Dengwei; Kong, Xingang; Mori, Kotaro; Tanaka, Yasuhiro; Shinagawa, Kazunari; Feng, Qi

    2013-09-16

    Ferroelectric mesocrystals of Bi0.5Na0.5TiO3 (BNT) with [100]-crystal-axis orientation were successfully prepared using a topotactic structural transformation process from a layered titanate H1.07Ti1.73O4·nH2O (HTO). The formation reactions of BNT mesocrystals in HTO-Bi2O3-Na2CO3 and HTO-TiO2-Bi2O3-Na2CO3 reaction systems and their nanostructures were studied by XRD, FE-SEM, TEM, SAED, and EDS, and the reaction mechanisms were given. The BNT mesocrystals are formed by a topotactic structural transformation mechanism in the HTO-Bi2O3-Na2CO3 reaction system and by a combination mechanism of the topotactic structural transformation and epitaxial crystal growth in the HTO-TiO2-Bi2O3-Na2CO3 reaction system, respectively. The BNT mesocrystals prepared by these methods are constructed from [100]-oriented BNT nanocrystals. Furthermore, these reaction systems were successfully applied to the fabrication of [100]-oriented BNT ferroelectric ceramic materials. A BNT ceramic material with a high degree of orientation, high relative density, and small grain size was achieved.

  3. Metal-Organic Coordination Complexes Serve the Electronic Industry as Low-Value Dielectric Constant Ferroelectric Material

    Science.gov (United States)

    Ahmad, Nazir; Kotru, P. N.

    2017-10-01

    Single crystals of praseodymium tartrate dihydrate possessing excellent ferroelectric, non-linear optical (NLO) properties and exhibiting remarkably flat habit faces are successfully grown by gel technique. The most predominant habit face is identified to be {101}. The dielectric behaviour recorded on {101} planes of single crystals exhibit a dielectric anomaly at 245°C, revealing a ferroelectric transition which is supported by thermal and polarisation versus electric field studies. The optical measurement leads to a band gap of 5.13 eV which is shown to be in good agreement with the studies of high-resolution x-ray diffraction (HRXRD), transport properties and NLO behaviour of the material. Absence of grain boundaries, thermal stability, ferroelectric and NLO behaviour supports the grown single crystal to find its place in microelectronic industry as a multifunctional material.

  4. A finite element model of ferroelectric/ferroelastic polycrystals

    Energy Technology Data Exchange (ETDEWEB)

    HWANG,STEPHEN C.; MCMEEKING,ROBERT M.

    2000-02-17

    A finite element model of polarization switching in a polycrystalline ferroelectric/ferroelastic ceramic is developed. It is assumed that a crystallite switches if the reduction in potential energy of the polycrystal exceeds a critical energy barrier per unit volume of switching material. Each crystallite is represented by a finite element with the possible dipole directions assigned randomly subject to crystallographic constraints. The model accounts for both electric field induced (i.e. ferroelectric) switching and stress induced (i.e. ferroelastic) switching with piezoelectric interactions. Experimentally measured elastic, dielectric, and piezoelectric constants are used consistently, but different effective critical energy barriers are selected phenomenologically. Electric displacement versus electric field, strain versus electric field, stress versus strain, and stress versus electric displacement loops of a ceramic lead lanthanum zirconate titanate (PLZT) are modeled well below the Curie temperature.

  5. Nanoscale phenomena in ferroelectric thin films

    Science.gov (United States)

    Ganpule, Chandan S.

    Ferroelectric materials are a subject of intense research as potential candidates for applications in non-volatile ferroelectric random access memories (FeRAM), piezoelectric actuators, infrared detectors, optical switches and as high dielectric constant materials for dynamic random access memories (DRAMs). With current trends in miniaturization, it becomes important that the fundamental aspects of scaling of ferroelectric and piezoelectric properties in these devices be studied thoroughly and their impact on the device reliability assessed. In keeping with this spirit of miniaturization, the dissertation has two broad themes: (a) Scaling of ferroelectric and piezoelectric properties and (b) The key reliability issue of retention loss. The thesis begins with a look at results on scaling studies of focused-ion-beam milled submicron ferroelectric capacitors using a variety of scanning probe characterization tools. The technique of piezoresponse microscopy, which is rapidly becoming an accepted form of domain imaging in ferroelectrics, has been used in this work for another very important application: providing reliable, repeatable and quantitative numbers for the electromechanical properties of submicron structures milled in ferroelectric films. This marriage of FIB and SPM based characterization of electromechanical and electrical properties has proven unbeatable in the last few years to characterize nanostructures qualitatively and quantitatively. The second half of this dissertation focuses on polarization relaxation in FeRAMs. In an attempt to understand the nanoscale origins of back-switching of ferroelectric domains, the time dependent relaxation of remnant polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O 3, PZT) ferroelectric thin films (used as a model system), containing a uniform 2-dimensional grid of 90° domains (c-axis in the plane of the film) has been examined using voltage modulated scanning force microscopy. A novel approach of

  6. Millimeter-Wave Dielectric Properties of Single Crystal Ferroelectric and Dielectric Materials

    Energy Technology Data Exchange (ETDEWEB)

    McCloy, John S.; Korolev, Konstantin A.; Li, Zijing; Afsar, Mohammed N.; Sundaram, S. K.

    2011-01-03

    Transmittance measurements on various single crystal ferroelectric materials over a broad millimeter-wave frequency range have been performed. Frequency dependence of the complex dielectric permittivity has been determined in the millimeter wave region for the first time. The measurements have been employed using a free-space quasi-optical millimeter-wave spectrometer equipped with a set of high power backward wave oscillators (BWOs) as sources of coherent radiation, tunable in the range from 30 - 120 GHz. The uncertainties and possible sources of instrumentation and measurement errors related to the free-space millimeter-wave technique are discussed. This work has demonstrated that precise MMW permittivities can be obtained even on small thin crystals using the BWO quasi-optical approach.

  7. III-Nitrides growth and AlGaN/GaN heterostructures on ferroelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyoung-Keun [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Namkoong, Gon [Old Dominion University, Department of Electrical and Computer Engineering, Norfolk, VA 23529 (United States); Madison, Shannon M. [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Ralph, Stephen E. [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Doolittle, W. Alan [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States)]. E-mail: alan.doolittle@ece.gatech.edu; Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Department of Chemistry, University of Bari, via Orabona, 4 70126 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Department of Chemistry, University of Bari, via Orabona, 4 70126 Bari (Italy); Cho, Hyung Koun [Department of Materials Science and Engineering, Sung Kyun Kwan University, Suwon 440-746 (Korea, Republic of)

    2007-06-15

    The growth of III-nitrides on the ferroelectric materials lithium niobate (LN) and lithium tantalate (LT) via molecular beam epitaxy (MBE) using rf plasma source has been investigated. We have found that gallium nitride (GaN) epitaxial layers have a crystalline relationship with lithium niobate (tantalate) as follows: (0 0 0 1) GaN || (0 0 0 1) LN (LT) with [10-10] GaN || [11-20] LN (LT). The surface stability of LN and LT substrates has been monitored by in situ spectroscopic ellipsometry in the vacuum chamber. Three different temperature zones have been discerned; surface degas and loss of OH group (100-350 deg. C); surface segregation/accumulation of Li and O-species (400-700 deg. C); surface evaporation of O-species and Li desorption (over 750 deg. C). However, LT shows only surface degassing in the range of 100-800 deg. C. Therefore, congruent LN substrates were chemically unstable at the growth temperature of 550-650 deg. C, and therefore developed an additional phase of Li-deficient lithium niobate (LiNb{sub 3}O{sub 8}) along with lithium niobate (LiNbO{sub 3}), confirmed by X-ray diffraction. On the other hand, LT showed better chemical stability at these temperatures, with no additional phase development. The structural quality of GaN epitaxial layers has shown slight improvement on LT substrates over LN substrates, according to X-ray diffraction. Herein, we demonstrate AlGaN/GaN heterostructure devices on ferroelectric materials that will allow future development of multifunctional electrical and optical applications.

  8. Reversible switching in phase-change materials

    OpenAIRE

    Wojciech Wełnic; Matthias Wuttig

    2008-01-01

    Phase-change materials are successfully employed in optical data storage and are becoming a promising candidate for future electronic storage applications. Despite the increasing technological interest, many fundamental properties of these materials remain poorly understood. However, in the last few years the understanding of the material properties of phase-change materials has increased significantly. At the same time, great advances have been achieved in technological applications in elect...

  9. Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

    Directory of Open Access Journals (Sweden)

    Luis H. da S. Lacerda

    2016-04-01

    Full Text Available ZnO is a semiconductor material largely employed in the development of several electronic and optical devices due to its unique electronic, optical, piezo-, ferroelectric and structural properties. This study evaluates the properties of Ba-doped wurtzite-ZnO using quantum mechanical simulations based on the Density Functional Theory (DFT allied to hybrid functional B3LYP. The Ba-doping caused increase in lattice parameters and slight distortions at the unit cell angle in a wurtzite structure. In addition, the doping process presented decrease in the band-gap (Eg at low percentages suggesting band-gap engineering. For low doping amounts, the wavelength characteristic was observed in the visible range; whereas, for middle and high doping amounts, the wavelength belongs to the Ultraviolet range. The Ba atoms also influence the ferroelectric property, which is improved linearly with the doping amount, except for doping at 100% or wurtzite-BaO. The ferroelectric results indicate the ZnO:Ba is an strong option to replace perovskite materials in ferroelectric and flash-type memory devices.

  10. Ferroelectricity in wurtzite structure simple chalcogenide

    Science.gov (United States)

    Moriwake, Hiroki; Konishi, Ayako; Ogawa, Takafumi; Fujimura, Koji; Fisher, Craig A. J.; Kuwabara, Akihide; Shimizu, Takao; Yasui, Shintaro; Itoh, Mitsuru

    2014-06-01

    The possibility of the new class ferroelectric materials of wurtzite structure simple chalcogenide was discussed using modern first-principles calculation technique. Ferroelectricity in the wurtzite structure (P63mc) can be understood by structure distortion from centrosymmetric P63/mmc by relative displacement of cation against anion along c-axis. Calculated potential surface of these compounds shows typical double well between two polar variants. The potential barriers for the ferroelectric polarization switching were estimated to be 0.25 eV/f.u. for ZnO. It is slightly higher energy to the common perovskite ferroelectric compound PbTiO3. Epitaxial tensile strain on the ab-plane (0001) is effective to lower the potential barrier. The potential barrier decreased from 0.25 to 0.15 eV/f.u. by 5% ab-plane expansion in wurtzite structure ZnO. Epitaxial ZnO thin film with donor type defect reduction should be a possible candidate to confirm this ferroelectricity in wurtzite structure simple chalcogenide.

  11. Ferroelectrics principles, structure and applications

    CERN Document Server

    Merchant, Serena

    2014-01-01

    Ferroelectric physics is a theory on ferroelectric phase transition for explaining various related phenomena, which is different from dielectric physics. Ferroelectric materials are important functional materials for various applications such as NVRAMs, high energy density capacitors, actuators, MEMs, sonar sensors, microphones and scanning electron microscopes (SEM). This book investigates the dielectric, ferroelectric and energy storage properties of barium zirconate-titanate/barium calcium-titanate (BZT-BCT) based ceramic for high energy density capacitors. It also compares the energy storage capabilities of ceramic powders with polymer-ceramic nanocomposites; and discusses dielectric properties of ferroelectricity in composition distributions.

  12. Modelling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects

    International Nuclear Information System (INIS)

    Morozovska, Anna N; Eliseev, Eugene A

    2004-01-01

    We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. We have modified the Landau-Ginsburg approach and shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic values and the various hysteresis-loop deformations (constricted and double loops) have been obtained in the framework of our model. The obtained results quantitatively explain the ferroelectric switching in such ferroelectric materials as thick PZT films

  13. Evaluation of the differential capacitance for ferroelectric materials using either charge-based or energy-based expressions

    OpenAIRE

    C. M. Krowne

    2014-01-01

    Differential capacitance is derived based upon energy, charge or current considerations, and determined when it may go negative or positive. These alternative views of differential capacitances are analyzed, and the relationships between them are shown. Because of recent interest in obtaining negative capacitance for reducing the subthreshold voltage swing in field effect type of devices, using ferroelectric materials characterized by permittivity, these concepts are now of paramount interest...

  14. Ferroelectric smectic phase formed by achiral straight core mesogens.

    Science.gov (United States)

    Stannarius, Ralf; Li, Jianjun; Weissflog, Wolfgang

    2003-01-17

    We report electro-optic experiments in liquid crystalline freestanding films of achiral hockey stick shaped mesogens with a straight aromatic core. The material forms two smectic mesophases. In the higher temperature phase, a spontaneous polarization exists in the smectic layer plane and the films show polar switching in electric fields. It is the first example of a ferroelectric phase formed by nearly rodlike achiral mesogens. Mirror symmetry of the phase is spontaneously broken. We propose a molecular configuration similar to a synclinic ferroelectric (C(S)P(F)) high temperature phase and an anticlinic, probably antiferroelectric (C(A)P(A)) low temperature phase.

  15. Engineering ferroelectric tunnel junctions through potential profile shaping

    Directory of Open Access Journals (Sweden)

    S. Boyn

    2015-06-01

    Full Text Available We explore the influence of the top electrode materials (W, Co, Ni, Ir on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO3. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

  16. Controlling the properties of ferroelectric-nickelate interfaces

    Science.gov (United States)

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit; Han, Myung-Geun; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick; Ahn, Charles

    2015-03-01

    Ferroelectrics are a class of materials that exhibit a stable, reversible polarization making them useful for non-volatile electronic devices. In devices consisting of thin film ferroelectric PZT acting as a gate and a thin film of the conductive oxide LaNiO3 grown on LaAlO3(001) acting as a channel, we have realized a large change in room temperature channel resistance by switching the ferroelectric polarization. The effect of switching the polarization of the ferroelectric is to modify the electronic structure of the interface between the gate and channel, resulting in conduction in the otherwise insulating ferroelectric. Here, we discuss how changing the epitaxial strain and interface termination of LaNiO3 can result in larger changes in resistivity. The epitaxial strain is varied by growing the devices on LaAlO3 for tensile strain and SrTiO3 for compressive strain. An interface termination of either an atomic layer of NiO2 or LaO is achieved via atomic layering using oxygen plasma assisted molecular beam epitaxy (MBE).

  17. Atomic layer deposition of environmentally benign SnTiO{sub x} as a potential ferroelectric material

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Siliang; Selvaraj, Sathees Kannan [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Choi, Yoon-Young; Hong, Seungbum [Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States); Nakhmanson, Serge M. [Department of Materials Science and Engineering, Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Takoudis, Christos G., E-mail: takoudis@uic.edu [Department of Bioengineering and Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

    2016-01-15

    Inspired by the need to discover environmentally friendly, lead-free ferroelectric materials, here the authors report the atomic layer deposition of tin titanate (SnTiO{sub x}) aiming to obtain the theoretically predicted perovskite structure that possesses ferroelectricity. In order to establish the growth conditions and probe the film structure and ferroelectric behavior, the authors grew SnTiO{sub x} films on the commonly used Si(100) substrate. Thin films of SnTiO{sub x} have been successfully grown at a deposition temperature of 200 °C, with a Sn/Ti atomic layer deposition (ALD) cycle ratio of 2:3 and postdeposition heat treatments under different conditions. X-ray photoelectron spectroscopy revealed excellent composition tunability of ALD. X-ray diffraction spectra suggested anatase phase for all films annealed at 650 and 350 °C, with peak positions shifted toward lower 2-theta angles indicating enlarged unit cell volume. The film annealed in O{sub 2} at 350 °C exhibited piezoresponse amplitude and phase hysteresis loops, indicative of the existence of switchable polarization.

  18. Impact of the electrode material and shape on performance of intrinsically tunable ferroelectric FBARs.

    Science.gov (United States)

    Vorobiev, Andrei; Gevorgian, Spartak

    2014-05-01

    Experiment-based analysis of losses in tunable ferroelectric xBiFeO3-(1-x)BaTiO3 (BF-BT) film bulk acoustic wave resonators (FBARs) is reported. The Q-factors, effective coupling coefficients, and tunabilities are considered as functions of surface roughness of the ferroelectric film, the acoustic impedance and shape of the electrodes/interconnecting strips, leakage of acoustic waves into the substrate via Bragg reflector, and the relative thicknesses of the electrodes and ferroelectric film. Compared with Al, the high acoustic impedance of Pt electrodes provides higher Q-factor, coupling coefficient, and tunability. However, using Pt in the interconnecting strips results in reduction of the Q-factor.

  19. Proceedings of the 8th International Symposium on Applications of Ferroelectrics

    Science.gov (United States)

    Liu, M.; Safari, A.; Kingon, A.; Haertling, G.

    1993-02-01

    The eighth International Symposium on the Applications of Ferroelectrics was held in Greenville, SC, on August 30 to Sept 2, 1992. It was attended by approximately 260 scientists and engineers who presented nearly 200 oral and poster papers. The three plenary presentations covered ferroelectric materials which are currently moving into commercial exploitation or have strong potential to do so. These were (1) pyroelectric imaging, (2) ferroelectric materials integrated with silicon for use as micromotors and microsensors and (3) research activity in Japan on high permittivity materials for DRAM's. Invited papers covered such subjects as pyroelectric and electrooptic properties of thin films, photorefractive effects, ferroelectric polymers, piezoelectric transducers, processing of ferroelectrics, domain switching in ferroelectrics, thin film memories, thin film vacuum deposition techniques and the fabrication of chemically prepared PZT and PLZT thin films. The papers continued to reflect the large interest in ferroelectric thin films. It was encouraging that there have been substantial strides made in both the processing and understanding of the films in the last two years. It was equally clear, however, that much still remains to be done before reliable thin film devices will be available in the marketplace.

  20. Bulk characterization methods for non-centrosymmetric materials: second-harmonic generation, piezoelectricity, pyroelectricity, and ferroelectricity.

    Science.gov (United States)

    Ok, Kang Min; Chi, Eun Ok; Halasyamani, P Shiv

    2006-08-01

    Characterization methods for bulk non-centrosymmetric compounds are described. These methods include second-harmonic generation, piezoelectricity, pyroelectricity, and ferroelectricity. In this tutorial review with each phenomenon, details are given of the measurement techniques along with a brief history and background. Finally, data interpretation is discussed.

  1. Structural Studies of BaTiO 3 Ferroelectric Material Prepared by ...

    African Journals Online (AJOL)

    Nano particle Barium Titanate (BT) is the first ferroelectric ceramics and a good nominee for a variety of applications from large family of Perovskite. In this study BaTiO3 was synthesised by using Sol-gel (green chemistry) method. It is environmental friendly method and has a significant influence on the structure and ...

  2. Investigation of ferroelectric materials by the thermal noise method: advantages and limitations

    Czech Academy of Sciences Publication Activity Database

    Bednyakov, Petr; Shnaidshtein, I. V.; Strukov, B. A.

    2016-01-01

    Roč. 500, č. 1 (2016), 203-217 ISSN 0015-0193 R&D Projects: GA ČR GA13-15110S Institutional support: RVO:68378271 Keywords : thermal noise * ferroelectricity * thin films * dielectric permittivity * equivalent circuit Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.551, year: 2016

  3. Ferroelectric memory based on molybdenum disulfide and ferroelectric hafnium oxide

    Science.gov (United States)

    Yap, Wui Chung; Jiang, Hao; Xia, Qiangfei; Zhu, Wenjuan

    Recently, ferroelectric hafnium oxide (HfO2) was discovered as a new type of ferroelectric material with the advantages of high coercive field, excellent scalability (down to 2.5 nm), and good compatibility with CMOS processing. In this work, we demonstrate, for the first time, 2D ferroelectric memories with molybdenum disulfide (MoS2) as the channel material and aluminum doped HfO2 as the ferroelectric gate dielectric. A 16 nm thick layer of HfO2, doped with 5.26% aluminum, was deposited via atomic layer deposition (ALD), then subjected to rapid thermal annealing (RTA) at 1000 °C, and the polarization-voltage characteristics of the resulting metal-ferroelectric-metal (MFM) capacitors were measured, showing a remnant polarization of 0.6 μC/cm2. Ferroelectric memories with embedded ferroelectric hafnium oxide stacks and monolayer MoS2 were fabricated. The transfer characteristics after program and erase pulses revealed a clear ferroelectric memory window. In addition, endurance (up to 10,000 cycles) of the devices were tested and effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, were observed. This research can potentially lead to advances of 2D materials in low-power logic and memory applications.

  4. A-Site Ordered Double Perovskite CaMnTi2O6 as a Multifunctional Piezoelectric and Ferroelectric-Photovoltaic Material.

    Science.gov (United States)

    Gou, Gaoyang; Charles, Nenian; Shi, Jing; Rondinelli, James M

    2017-10-02

    The double perovskite CaMnTi 2 O 6 , is a rare A-site ordered perovskite oxide that exhibits a sizable ferroelectric polarization and relatively high Curie temperature. Using first-principles calculations combined with detailed symmetry analyses, we identify the origin of the ferroelectricity in CaMnTi 2 O 6 . We further explore the material properties of CaMnTi 2 O 6 , including its ferroelectric polarization, dielectric and piezoelectric responses, magnetic order, electronic structure, and optical absorption coefficient. It is found that CaMnTi 2 O 6 exhibits room-temperature-stable ferroelectricity and moderate piezoelectric responses. Moreover, CaMnTi 2 O 6 is predicted to have a semiconducting energy band gap similar to that of BiFeO 3 , and its band gap can further be tuned via distortions of the planar Mn-O bond lengths. CaMnTi 2 O 6 exemplifies a new class of single-phase semiconducting ferroelectric perovskites for potential applications in ferroelectric photovoltaic solar cells.

  5. Evaluation of the differential capacitance for ferroelectric materials using either charge-based or energy-based expressions

    Directory of Open Access Journals (Sweden)

    C. M. Krowne

    2014-07-01

    Full Text Available Differential capacitance is derived based upon energy, charge or current considerations, and determined when it may go negative or positive. These alternative views of differential capacitances are analyzed, and the relationships between them are shown. Because of recent interest in obtaining negative capacitance for reducing the subthreshold voltage swing in field effect type of devices, using ferroelectric materials characterized by permittivity, these concepts are now of paramount interest to the research community. For completeness, differential capacitance is related to the static capacitance, and conditions when the differential capacitance may go negative in relation to the static capacitance are shown.

  6. Nanomechanics of flexoelectric switching

    Science.gov (United States)

    Očenášek, J.; Lu, H.; Bark, C. W.; Eom, C. B.; Alcalá, J.; Catalan, G.; Gruverman, A.

    2015-07-01

    We examine the phenomenon of flexoelectric switching of polarization in ultrathin films of barium titanate induced by a tip of an atomic force microscope (AFM). The spatial distribution of the tip-induced flexoelectricity is computationally modeled both for perpendicular mechanical load (point measurements) and for sliding load (scanning measurements), and compared with experiments. We find that (i) perpendicular load does not lead to stable ferroelectric switching in contrast to the load applied in the sliding contact load regime, due to nontrivial differences between the strain distributions in both regimes: ferroelectric switching for the perpendicular load mode is impaired by a strain gradient inversion layer immediately underneath the AFM tip; while for the sliding load regime, domain inversion is unimpaired within a greater material volume subjected to larger values of the mechanically induced electric field that includes the region behind the sliding tip; (ii) beyond a relatively small value of an applied force, increasing mechanical pressure does not increase the flexoelectric field inside the film, but results instead in a growing volume of the region subjected to such field that aids domain nucleation processes; and (iii) the flexoelectric coefficients of the films are of the order of few nC/m, which is much smaller than for bulk BaTi O3 ceramics, indicating that there is a "flexoelectric size effect" that mirrors the ferroelectric one.

  7. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Abstract. The stress relaxation of ferroelectric/piezoelectric material was studied using compression testing. The deformation was produced by the switching of ferroelectric domains. The internal stresses were estimated by decremental stress relaxation during unloading. The results were interpreted in terms of reversible and ...

  8. 'Memristive' switches enable 'stateful' logic operations via material implication.

    Science.gov (United States)

    Borghetti, Julien; Snider, Gregory S; Kuekes, Philip J; Yang, J Joshua; Stewart, Duncan R; Williams, R Stanley

    2010-04-08

    The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.

  9. Characterization of ferroelectric material properties of multifunctional lead zirconate titanate for energy harvesting sensor nodes

    Science.gov (United States)

    Marinkovic, Bozidar; Kaya, Tolga; Koser, Hur

    2011-01-01

    We propose a microsystem integration technique that is ideal for low-cost fabrication of vibration energy harvesting sensor nodes. Our approach exploits diverse uses of sol-gel deposited lead zirconate titanate, effectively combining fabrication of several microsystem components into a single process and significantly reducing manufacturing cost and time. Here, we measure and characterize thin film parameters—such as the piezoelectric coefficient e31 (-4.0 C/m2 ) , the dielectric constant ɛr-eff (219 at 3.3 V), and the total switching polarization (2 Pr;52 μ C/cm2 ) —in order to verify this material's potential for energy harvesting, energy storage, and nonvolatile memory applications simultaneously on the same device.

  10. Effect of Top Electrode Material on Radiation-Induced Degradation of Ferroelectric Thin Films

    Science.gov (United States)

    2016-03-31

    film applications, mostly due to its very high conductivity, maintained through the high processing temperatures (~700C) required for processing...were carried out at 1 kHz at fields up to 400 kV/cm using a P-PM2 Radiant ferroelectric test system. Measurements to probe the converse, effective...electrodes shown below. Shaded regions indicate 95% confidence interval from the mean for all measurements. Irradiation of films with both electrode

  11. Bismuth Oxychalcogenides: A New Class of Ferroelectric/Ferroelastic Materials with Ultra High Mobility.

    Science.gov (United States)

    Wu, Menghao; Zeng, Xiao Cheng

    2017-10-11

    Atomically thin Bi 2 O 2 Se has been recently synthesized, and it possesses ultrahigh mobility (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021). Herein, we show first-principles evidence that Bi 2 O 2 Se and a related class of bismuth oxychalcogenides, such as Bi 2 O 2 S and Bi 2 O 2 Te, not only are novel semiconductors with ultrahigh mobility but also possess previously unreported ferroelectricity/ferroelasticity. Such a unique combination of semiconducting with ferroelectric/ferroelastic properties enables bismuth oxychalcogenides to potentially meet a great challenge, that is, integration of room-temperature functional nonvolatile memories into future nanocircuits. Specifically, we predict that bulk Bi 2 O 2 S is both ferroelastic and antiferroelectric and that a thin film with odd number of layers can even be multiferroic with nonzero in-plane polarization, and this polarization can be switchable via ferroelasticity. Moreover, Bi 2 O 2 Te possesses intrinsic out-of-plane ferroelectricity, while Bi 2 O 2 Se possesses piezoelectricity and ferroelectricity upon an in-plane strain. The in-plane strain on Bi 2 O 2 Se can induce giant polarizations (56.1 μC/cm 2 upon 4.1% strain) with the piezoelectric coefficient being about 35 times higher than that of MoS 2 monolayer. The in-plane strain can also enhance the bandgap or even convert indirect to direct bandgap beyond a critical value. The good match among the lattice constants of bismuth oxychalcogenides is also desirable, rendering the epitaxial growth of heterostructure devices free of fabrication issues related to lattice mismatch, thereby allowing high-quality bismuth oxychalcogenide heterostructures tailored by design for a variety of applications.

  12. Theoretical study of the flexoelectric effect based on a simple model of ferroelectric material

    Czech Academy of Sciences Publication Activity Database

    Klíč, Antonín; Marvan, M.

    2004-01-01

    Roč. 63, - (2004), s. 155-159 ISSN 1058-4587 R&D Projects: GA ČR GA202/00/1187; GA ČR GA202/02/0238 Institutional research plan: CEZ:AV0Z1010914; CEZ:MSM 113200001 Keywords : ferroelectrics * piezoelectricity * electrostriction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.427, year: 2004

  13. Introduction to the IEEE International Symposium on Applications of Ferroelectrics and International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials.

    Science.gov (United States)

    Ye, Zuo-Guang; Tan, Xiaoli; Bokov, Alexei A

    2012-09-01

    The 20th IEEE International Symposium on Applications of Ferroelectrics (ISAF) was held on July 24-27, 2011, in Vancouver, British Columbia, Canada, jointly with the International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (PFM). Over a period of four days, approximately 400 scientists, engineers, and students from around the world presented their work and discussed the latest developments in the field of ferroelectrics, related materials, and their applications. It is particularly encouraging to see that a large number of students (115) were attracted to the joint conference and presented high-quality research works. This trend is not only important to this conference series, but more importantly, it is vital to the future of the ferroelectrics field.

  14. In situ transmission electron microscopy study of the microstructural origins for the electric field-induced phenomena in ferroelectric perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Hanzheng [Iowa State Univ., Ames, IA (United States)

    2014-12-15

    Ferroelectrics are important materials due to their extensive technological applications, such as non-volatile memories, field-effect transistors, ferroelectric tunneling junctions, dielectric capacitors, piezoelectric transducers, sensors and actuators. As is well known, the outstanding dielectric, piezoelectric, and ferroelectric properties of these functional oxides originate from their ferroelectric domain arrangements and the corresponding evolution under external stimuli (e.g. electric field, stress, and temperature). Electric field has been known as the most efficient stimulus to manipulate the ferroelectric domains through polarization switching and alignment. Therefore, direct observation of the dynamic process of electric field-induced domain evolution and crystal structure transformation is of significant importance to understand the microstructural mechanisms for the functional properties of ferroelectrics. In this dissertation, electric field in situ transmission electron microscopy (TEM) technique was employed to monitor the real-time evolution of the domain morphology and crystal structure during various electrical processes: (1) the initial poling process, (2) the electric field reversal process, and (3) the electrical cycling process. Two types of perovskite-structured ceramics, normal ferroelectrics and relaxor ferroelectrics, were used for this investigation. In addition to providing the microscopic insight for some wellaccepted phase transformation rules, discoveries of some new or even unexpected physical phenomena were also demonstrated.

  15. Influence of Bias on the Friction Imaging of Ferroelectric Domains in Single Crystal Barium Titanate Energy Storage Materials

    Directory of Open Access Journals (Sweden)

    Lan Chen

    2014-01-01

    Full Text Available The friction imaging of newlycleaved surface domains of single crystal BaTiO3 energy storage materials under both positive and negative voltage bias is investigated by scanning force microscope. When the bias was applied and reversed, three regions with different brightness and contrast in friction image indicated different response to the biases: the friction image of domain A displayed a great change in brightness while domains B and C displayed only a very small change. Possible mechanisms of the interesting phenomena originating from different static force between different charged tip and the periodical array of surface charges inside the inplane domains were proposed. These results provide a new method for the determination of the polarization direction for the domain parallel to the surface and may be useful in the investigation of ferroelectric energy storage materials, especially the relationship between the polarization direction of domain and the bias.

  16. Dielectric behaviour of the composite system: multiwall carbon nanotubes dispersed in ferroelectric liquid crystalline material

    Czech Academy of Sciences Publication Activity Database

    Shukla, R.K.; Raina, K.K.; Hamplová, Věra; Kašpar, Miroslav; Bubnov, Alexej

    2011-01-01

    Roč. 84, 9-10 (2011), 850-857 ISSN 0141-1594 R&D Projects: GA AV ČR IAA100100911; GA AV ČR(CZ) GA202/09/0047; GA ČR(CZ) GAP204/11/0723 Grant - others:RFASI(RU) 02.740.11.5166 Institutional research plan: CEZ:AV0Z10100520 Keywords : ferroelectric liquid crystal * multiwall carbon nanotube * composite * mesomorphic property * dielectric spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.006, year: 2011

  17. Self-consistent nonlinearly polarizable shell-model dynamics for ferroelectric materials

    International Nuclear Information System (INIS)

    Mkam Tchouobiap, S.E.; Kofane, T.C.; Ngabireng, C.M.

    2002-11-01

    We investigate the dynamical properties of the polarizable shellmodel with a symmetric double Morse-type electron-ion interaction in one ionic species. A variational calculation based on the Self-Consistent Einstein Model (SCEM) shows that a theoretical ferroelectric (FE) transition temperature can be derive which demonstrates the presence of a first-order phase transition for the potassium selenate (K 2 SeO 4 ) crystal around Tc 91.5 K. Comparison of the model calculation with the experimental critical temperature yields satisfactory agreement. (author)

  18. Electrical properties of two-dimensional thin films of the ferroelectric material Polyvinylidene Fluoride as a function of electric field

    Energy Technology Data Exchange (ETDEWEB)

    Belouadah, R., E-mail: r_belouadah74@yahoo.f [Departement de physique, Universite de M' sila, PB 116 Ichebilia, M' sila (Algeria); Laboratoire des Systemes Integres a base de Capteurs, Ecole Normale Superieure B.P 92 Kouba, Alger (Algeria); Kendil, D.; Bousbiat, E. [Laboratoire des Systemes Integres a base de Capteurs, Ecole Normale Superieure B.P 92 Kouba, Alger (Algeria); Guyomar, D.; Guiffard, B. [Laboratoire de Genie Electrique et Ferroelectricite, INSA-Lyon, Bat. Gustave Ferrie, 8 rue de la Physique, Villeurbanne (France)

    2009-06-01

    The study of the electrical properties of two-dimensional ferroelectric materials is very interesting because of the many possible applications relating to effects on their polarization properties. In this work we study the effect of a sinusoidal electric field on the dielectric and electrical properties of uni-axially and biaxially stretched polyvinylidene fluoride (PVDF) films. We have determined the polarization current, remanent polarization, maximal polarization, the hysteresis loop and coercive field as a function of applied electric field amplitude. The most interesting effects are the electric field (E) dependences of the resistivity. It is shown that for the biaxially stretched PVDF sample, the resistivity is almost constant, whereas for the uni-axially stretched specimen, a large decrease of resistivity is observed.

  19. Development of Phase Change Materials for RF Switch Applications

    Science.gov (United States)

    King, Matthew Russell

    For decades chalcogenide-based phase change materials (PCMs) have been reliably implemented in optical storage and digital memory platforms. Owing to the substantial differences in optical and electronic properties between crystalline and amorphous states, device architectures requiring a "1" and "0" or "ON" and "OFF" states are attainable with PCMs if a method for amorphizing and crystallizing the PCM is demonstrated. Taking advantage of more than just the binary nature of PCM electronic properties, recent reports have shown that the near-metallic resistivity of some PCMs allow one to manufacture high performance RF switches and related circuit technologies. One of the more promising RF switch technologies is the Inline Phase Change Switch (IPCS) which utilizes GeTe as the active material. Initial reports show that an electrically isolated, thermally coupled thin film heater can successfully convert GeTe between crystalline and amorphous states, and with proper design an RF figure of merit cutoff frequency (FCO) of 12.5 THz can be achieved. In order to realize such world class performance a significant development effort was undertaken to understand the relationship between fundamental GeTe properties, thin film deposition method and resultant device properties. Deposition pressure was found to be the most important deposition process parameter, as it was found to control Ge:Te ratio, oxygen content, Ar content, film density and surface roughness. Ultimately a first generation deposition process produced GeTe films with a crystalline resistivity of 3 ohm-mum. Upon implementing these films into IPCS devices, post-cycling morphological analysis was undertaken using STEM and related analyses. It was revealed that massive structural changes occur in the GeTe during switching, most notably the formation of an assembly of voids along the device centerline and large GeTe grains on either side of the so-called active region. Restructuring of this variety was tied to

  20. Investigations on the effects of electrode materials on the device characteristics of ferroelectric memory thin film transistors fabricated on flexible substrates

    Science.gov (United States)

    Yang, Ji-Hee; Yun, Da-Jeong; Seo, Gi-Ho; Kim, Seong-Min; Yoon, Myung-Han; Yoon, Sung-Min

    2018-03-01

    For flexible memory device applications, we propose memory thin-film transistors using an organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and an amorphous In-Ga-Zn-O (a-IGZO) active channel. The effects of electrode materials and their deposition methods on the characteristics of memory devices exploiting the ferroelectric field effect were investigated for the proposed ferroelectric memory thin-film transistors (Fe-MTFTs) at flat and bending states. It was found that the plasma-induced sputtering deposition and mechanical brittleness of the indium-tin oxide (ITO) markedly degraded the ferroelectric-field-effect-driven memory window and bending characteristics of the Fe-MTFTs. The replacement of ITO electrodes with metal aluminum (Al) electrodes prepared by plasma-free thermal evaporation greatly enhanced the memory device characteristics even under bending conditions owing to their mechanical ductility. Furthermore, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) was introduced to achieve robust bending performance under extreme mechanical stress. The Fe-MTFTs using PEDOT:PSS source/drain electrodes were successfully fabricated and showed the potential for use as flexible memory devices. The suitable choice of electrode materials employed for the Fe-MTFTs is concluded to be one of the most important control parameters for highly functional flexible Fe-MTFTs.

  1. Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

    KAUST Repository

    Awan, Saif Ullah

    2014-10-28

    Memory and switching devices acquired new materials which exhibit ferroelectric and ferromagnetic order simultaneously. We reported multiferroic behavior in Zn1-yLiyO(0.00≤y≤0.10) nanoparticles. The analysis of transmission electron micrographs confirmed the hexagonal morphology and wurtzite crystalline structure. We investigated p-type conductivity in doped samples and measured hole carriers in range 2.4×1017/cc to 7.3×1017/cc for different Li contents. We found that hole carriers are responsible for long range order ferromagnetic coupling in Li doped samples. Room temperature ferroelectric hysteresis loops were observed in 8% and 10% Li doped samples. We demonstrated ferroelectric coercivity (remnant polarization) 2.5kV/cm (0.11 μC/cm2) and 2.8kV/cm (0.15 μC/cm2) for y=0.08 and y=0.10 samples. We propose that the mechanism of Li induced ferroelectricity in ZnO is due to indirect dipole interaction via hole carriers. We investigated that if the sample has hole carriers ≥5.3×1017/cc, they can mediate the ferroelectricity. Ferroelectric and ferromagnetic measurements showed that higher electric polarization and larger magnetic moment is attained when the hole concentration is larger and vice versa. Our results confirmed the hole dependent coexistence of ferromagnetic and ferroelectric behavior at room temperature, which provide potential applications for switchable and memory devices.

  2. Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications

    International Nuclear Information System (INIS)

    Hoffman, J; Ahn, C H; Hong, X

    2011-01-01

    Ferroelectric field effect devices offer the possibility of non-volatile data storage. Attempts to integrate perovskite ferroelectric materials with silicon semiconductors, however, have been largely unsuccessful in creating non-volatile, nondestructive read memory elements because of difficulties in controlling the ferroelectric/semiconductor interface. Correlated oxide systems have been explored as alternative channel materials to form all-perovskite field effect devices. We examine a non-volatile memory using an electric-field-induced metal-insulator transition in PbZr 0.2 Ti 0.8 O 3 /La 1-x Sr x MnO 3 (PZT/LSMO), PZT/La 1-x Ca x MnO 3 (PZT/LCMO) and PZT/La 1-x Sr x CoO 3 (PZT/LSCO) devices. The performance of these devices in the areas of switching time and retention are discussed.

  3. Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications.

    Science.gov (United States)

    Hoffman, J; Hong, X; Ahn, C H

    2011-06-24

    Ferroelectric field effect devices offer the possibility of non-volatile data storage. Attempts to integrate perovskite ferroelectric materials with silicon semiconductors, however, have been largely unsuccessful in creating non-volatile, nondestructive read memory elements because of difficulties in controlling the ferroelectric/semiconductor interface. Correlated oxide systems have been explored as alternative channel materials to form all-perovskite field effect devices. We examine a non-volatile memory using an electric-field-induced metal-insulator transition in PbZr(0.2)Ti(0.8)O(3)/La(1 - x)Sr(x)MnO(3) (PZT/LSMO), PZT/La(1 - x)Ca(x)MnO(3) (PZT/LCMO) and PZT/La(1 - x)Sr(x)CoO(3) (PZT/LSCO) devices. The performance of these devices in the areas of switching time and retention are discussed.

  4. Ferroelectric tunnel junctions for information storage and processing.

    Science.gov (United States)

    Garcia, Vincent; Bibes, Manuel

    2014-07-24

    Computer memory that is non-volatile and therefore able to retain its information even when switched off enables computers that do not need to be booted up. One of the technologies for such applications is ferroelectric random access memories, where information is stored as ferroelectric polarization. To miniaturize such devices to the size of a few nanometres, ferroelectric tunnel junctions have seen considerable interest. There, the electric polarization determines the electrical resistance of these thin films, switching the current on and off. With control over other parameters such as magnetism also being possible, ferroelectric tunnel junctions represent a promising and flexible device design.

  5. Single crystal ternary oxide ferroelectric integration with Silicon

    Science.gov (United States)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  6. Single crystal neutron diffraction studies on ferroelectric materials. A review on neutron diffraction works made using the 4-circle diffractometer at KUR

    International Nuclear Information System (INIS)

    Iwata, Yutaka; Mitani, Shigeshi; Shibuya, Iwao

    1994-01-01

    Summary is made on the single crystal neutron diffraction works carried out over the past 30 years using 4-circle neutron diffractometer installed at B-3 beam hole of the Kyoto University Reactor. Subjects dealt with are studies on structure determinations and investigations on phase transition mechanism in various ferroelectric materials and related substances. New applications are also introduced on neutron diffraction method for investigating molecular dynamics and behavior of hydrogens in crystals. (author) 83 refs

  7. Ferroelectric quantum criticality

    International Nuclear Information System (INIS)

    Rowley, S.; Spalek, L.; Scott, J.F.; Lonzarich, G.G.; Saxena, S.S.

    2007-01-01

    Full text: Materials tuned to the neighbourhood of a zero temperature phase transition often show the emergence of novel quantum phenomena. Much of the effort to study these new emergent effects, like the break down of the conventional Fermi-liquid theory of metals, has been focused in narrow band electronic systems. Ferroelectric crystals provide another class of materials in which to study quantum criticality and its resulting effects. In many cases the ferroelectric phase can be tuned to absolute zero using hydrostatic pressure. Close to such a zero temperature phase transition, the dielectric constant and other quantities change into radically unconventional forms due to the fluctuations experienced in this region. Measurements in pure single crystals of SrTi1 6 O 3 and SrTi1 8 O 3 will be shown and a simple model for describing the Ferroelectric quantum critical point will be outlined. The expected 1/T 2 dependence of the dielectric constant in SrTi1 6 O 3 over a wide temperature range at low temperatures will be highlighted as well as some further novel features. Looking to the future, one might imagine that quantum paraelectric fluctuations could lead to new low temperature states and mediate novel interactions in ferroelectric crystals supporting itinerant electrons.(authors)

  8. Synthesis of ferroelectric nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Roervik, Per Martin

    2008-12-15

    The increasing miniaturization of electric and mechanical components makes the synthesis and assembly of nanoscale structures an important step in modern technology. Functional materials, such as the ferroelectric perovskites, are vital to the integration and utility value of nanotechnology in the future. In the present work, chemical methods to synthesize one-dimensional (1D) nanostructures of ferroelectric perovskites have been studied. To successfully and controllably make 1D nanostructures by chemical methods it is very important to understand the growth mechanism of these nanostructures, in order to design the structures for use in various applications. For the integration of 1D nanostructures into devices it is also very important to be able to make arrays and large-area designed structures from the building blocks that single nanostructures constitute. As functional materials, it is of course also vital to study the properties of the nanostructures. The characterization of properties of single nanostructures is challenging, but essential to the use of such structures. The aim of this work has been to synthesize high quality single-crystalline 1D nanostructures of ferroelectric perovskites with emphasis on PbTiO3 , to make arrays or hierarchical nanostructures of 1D nanostructures on substrates, to understand the growth mechanisms of the 1D nanostructures, and to investigate the ferroelectric and piezoelectric properties of the 1D nanostructures. In Paper I, a molten salt synthesis route, previously reported to yield BaTiO3 , PbTiO3 and Na2Ti6O13 nanorods, was re-examined in order to elucidate the role of volatile chlorides. A precursor mixture containing barium (or lead) and titanium was annealed in the presence of NaCl at 760 degrees Celsius or 820 degrees Celsius. The main products were respectively isometric nanocrystalline BaTiO3 and PbTiO3. Nanorods were also detected, but electron diffraction revealed that the composition of the nanorods was

  9. Liquid crystals with novel terminal chains as ferroelectric liquid crystal hosts

    International Nuclear Information System (INIS)

    Cosquer, G.Y.

    2000-02-01

    Changes to the molecular structure of liquid crystals can have a significant effect upon their mesomorphism and ferroelectric properties. Most of the research in liquid crystal for display applications concentrates on the design and synthesis of novel mesogenic cores to which straight terminal alkyl or alkoxy chains are attached. However, little is known about the effects upon the mesomorphism and ferroelectric properties of varying the terminal chains. The compounds prepared in this work have a common core - a 2,3-difluoroterphenyl unit with a nine-atom alkyl (nonyl) or alkoxy (octyloxy) chain at the 4-position, but with an unusual chain at the 4''-position. In some cases the terminal chain contains hetero atoms such as silicon, oxygen, chlorine and bromine or has a bulky end group. In total 46 final materials were synthesised in an attempt to understand the effect of an unusual terminal chains on mesomorphism and for some of these compounds the effect upon the switching times when added to a standard ferroelectric mixture were investigated. It was found that most compounds containing a bulky end group only displayed a smectic C phase, compounds with a halogen substituent as an end unit displayed a smectic A phase and that increasing the chain flexibility by introducing an oxygen atom in the chain reduces the melting and clearing points. The electro-optical measurements carried out on ferroelectric mixtures containing a bulky end group compound showed that shorter switching times were produced than for the ferroelectric mixture containing a straight chain compound. It is suggested that a bulky end group diminishes te extent of interlayer mixing in the chiral smectic C phase and therefore the molecules move more easily with ferroelectric switching. (author)

  10. PREFACE: 12th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity and 9th International Conference on Functional Materials and Nanotechnologies (RCBJSF-2014-FM&NT)

    Science.gov (United States)

    Sternberg, Andris; Grinberga, Liga; Sarakovskis, Anatolijs; Rutkis, Martins

    2015-03-01

    The joint International Symposium RCBJSF-2014-FM&NT successfully has united two international events - 12th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity (RCBJSF-12) and 9th International Conference Functional Materials and Nanotechnologies (FM&NT-2014). The RCBJSF symposium is a continuation of series of meetings on ferroelectricity, the first of which took place in Novosibirsk (USSR) in 1976. FM&NT conferences started in 2006 and have been organized by Institute of Solid State Physics, University of Latvia in Riga. In 2012 the International program committee decided to transform this conference into a traveling Baltic State conference and the FM&NT-2013 was organized by the Institute of Physics, University of Tartu, Estonia. In 2014 the joint international symposium RCBJSF-2014-FM&NT was organized by the Institute of Solid State Physics, University of Latvia and was part of Riga - 2014, the European Capital of Culture event. The purpose of the joint Symposium was to bring together scientists, students and high-level experts in solid state physics, materials science, engineering and related disciplines. The number of the registered participants from 26 countries was over 350. During the Symposium 128 high quality scientific talks (5 plenary, 42 invited, 81 oral) and over 215 posters were presented. All presentations were divided into 4 parallel sessions according to 4 main topics of the Symposium: Ferroelectricity, including ferroelectrics and multiferroics, pyroelectrics, piezoelectrics and actuators, integrated ferroelectrics, relaxors, phase transitions and critical phenomena. Multifunctional Materials, including theory, multiscale and multiphenomenal material modeling and simulation, advanced inorganic, organic and hybrid materials. Nanotechnologies, including progressive methods, technologies and design for production, investigation of nano- particles, composites, structures, thin films and coatings. Energy, including perspective materials and

  11. An epitaxial ferroelectric tunnel junction on silicon.

    Science.gov (United States)

    Li, Zhipeng; Guo, Xiao; Lu, Hui-Bin; Zhang, Zaoli; Song, Dongsheng; Cheng, Shaobo; Bosman, Michel; Zhu, Jing; Dong, Zhili; Zhu, Weiguang

    2014-11-12

    Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications

    Directory of Open Access Journals (Sweden)

    Ahmad Faraz

    2015-08-01

    Full Text Available The ability to control the growth, texture and orientation of self-nanostructured lead-free Aurivillius phase thin films can in principle, greatly improve their ferroelectric properties, since in these materials the polarization direction is dependent on crystallite orientation. Here, we report the growth of c-plane oriented Bi6Ti3Fe2O18 (B6TFO functional oxide Aurivillius phase thin films on c-plane sapphire substrates by liquid injection chemical vapour deposition (LI-CVD. Microstructural analysis reveals that B6TFO thin films annealed at 850°C are highly crystalline, well textured (Lotgering factor of 0.962 and single phase. Typical Aurivillius plate-like morphology with an average film thickness of 110nm and roughness 24nm was observed. The potential of B6TFO for use as a material in lead-free piezoelectric and ferroelectric data storage applications was explored by investigating local electromechanical (piezoelectric and ferroelectric properties at the nano-scale. Vertical and lateral piezoresponse force microscopy (PFM reveals stronger in-plane polarization due to the controlled growth of the a-axis oriented grains lying in the plane of the B6TFO films. Switching spectroscopy PFM (SS-PFM hysteresis loops obtained at higher temperatures (up to 200°C and at room temperature reveal a clear ferroelectric signature with only minor changes in piezoresponse observed with increasing temperature. Ferroelectric domain patterns were written at 200°C using PFM lithography. Hysteresis loops generated inside the poled regions at room and higher temperatures show a significant increase in piezoresponse due to alignment of the c-axis polarization components under the external electric field. No observable change in written domain patterns was observed after 20hrs of PFM scanning at 200°C, confirming that B6TFO retains polarization over this finite period of time. These studies demonstrate the potential of B6TFO thin films for use in piezoelectric

  13. Differential voltage amplification from ferroelectric negative capacitance

    Science.gov (United States)

    Khan, Asif I.; Hoffmann, Michael; Chatterjee, Korok; Lu, Zhongyuan; Xu, Ruijuan; Serrao, Claudy; Smith, Samuel; Martin, Lane W.; Hu, Chenming; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2017-12-01

    We demonstrate that a ferroelectric can cause a differential voltage amplification without needing an external energy source. As the ferroelectric switches from one polarization state to the other, a transfer of energy takes place from the ferroelectric to the dielectric, determined by the ratio of their capacitances, which, in turn, leads to the differential amplification. This amplification is very different in nature from conventional inductor-capacitor based circuits where an oscillatory amplification can be observed. The demonstration of differential voltage amplification from completely passive capacitor elements only has fundamental ramifications for next generation electronics.

  14. Development and application of an empirical formula for the high temperature behavior of ferroelectric ceramics switched by electric field at room temperature

    Directory of Open Access Journals (Sweden)

    Dae Won Ji

    2017-05-01

    Full Text Available The strain changes during temperature rise of a poled lead titanate zirconate rectangular parallelepiped switched by electric field at room temperature are obtained by integrating thermal expansion coefficients that are measured using an invar-specimen. By estimating and analyzing pyroelectric and thermal expansion coefficients, first-order differential equations are constructed for polarization and strain changes during temperature increase. The solutions to the differential equations are found and used to calculate the high temperature behavior of the materials. It is shown that the predictions are well compared with measured responses. Finally, the developed formulae are applied to calculate strain butterfly loops from a polarization hysteresis loop at a high temperature.

  15. Ferroelectricity and Piezoelectricity in Free-Standing Polycrystalline Films of Plastic Crystals.

    Science.gov (United States)

    Harada, Jun; Yoneyama, Naho; Yokokura, Seiya; Takahashi, Yukihiro; Miura, Atsushi; Kitamura, Noboru; Inabe, Tamotsu

    2018-01-10

    Plastic crystals represent a unique compound class that is often encountered in molecules with globular structures. The highly symmetric cubic crystal structure of plastic crystals endows these materials with multiaxial ferroelectricity that allows a three-dimensional realignment of the polarization axes of the crystals, which cannot be achieved using conventional molecular ferroelectric crystals with low crystal symmetry. In this work, we focused our attention on malleability as another characteristic feature of plastic crystals. We have synthesized the new plastic/ferroelectric ionic crystals tetramethylammonium tetrachloroferrate(III) and tetramethylammonium bromotrichloroferrate(III), and discovered that free-standing translucent films can be easily prepared by pressing powdered samples of these compounds. The thus obtained polycrystalline films exhibit ferroelectric polarization switching and a relatively large piezoelectric response at room temperature. The ready availability of functional films demonstrates the practical utility of such plastic/ferroelectric crystals, and considering the vast variety of possible constituent cations and anions, a wide range of applications should be expected for these unique and attractive functional materials.

  16. Ferroelectric Thin Film Development

    National Research Council Canada - National Science Library

    Harman, Taran V

    2003-01-01

    The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate...

  17. Breaking of macroscopic centric symmetry in paraelectric phases of ferroelectric materials and implications for flexoelectricity

    Science.gov (United States)

    Biancoli, Alberto; Fancher, Chris M.; Jones, Jacob L.; Damjanovic, Dragan

    2015-02-01

    A centrosymmetric stress cannot induce a polar response in centric materials; piezoelectricity is, for example, possible only in non-centrosymmetric structures. An exception is metamaterials with shape asymmetry, which may be polarized by stress even when the material is centric. In this case the mechanism is flexoelectricity, which relates polarization to a strain gradient. The flexoelectric response scales inversely with size, thus a large effect is expected in nanoscale materials. Recent experiments in polycrystalline, centrosymmetric perovskites (for example, (Ba, Sr)TiO3) have indicated values of flexoelectric coefficients that are orders of magnitude higher than theoretically predicted, promising practical applications based on bulk materials. We show that materials with unexpectedly large flexoelectric response exhibit breaking of the macroscopic centric symmetry through inhomogeneity induced by the high-temperature processing. The emerging electro-mechanical coupling is significant and may help to resolve the controversy surrounding the large apparent flexoelectric coefficients in this class of materials.

  18. Reversible mobility switching in molecular materials controlled by photochromic reactions

    Czech Academy of Sciences Publication Activity Database

    Sworakowski, J.; Nešpůrek, Stanislav; Toman, Petr; Wang, Geng; Bartkowiak, W.

    2004-01-01

    Roč. 147, č. 3 (2004), s. 241-246 ISSN 0379-6779 R&D Projects: GA MŠk OC D14.30 Grant - others:Polish Committee for Scientific Res.(PL) 4 T09A 1322 Institutional research plan: CEZ:AV0Z4050913 Keywords : molecular switch * charge carrier mobility * polymer Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.278, year: 2004

  19. Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3

    KAUST Repository

    Cui, Chaojie

    2018-01-30

    Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intra-layer ferroelectricity in two-dimensional (2D) van der Waals layered -In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. Based on the in-plane switchable diode effect and the narrow bandgap (~1.3 eV) of ferroelectric In2Se3, a prototypical non-volatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.

  20. Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

    KAUST Repository

    Mayet, Abdulilah M.

    2015-12-04

    © 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young\\'s modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

  1. Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO3

    Energy Technology Data Exchange (ETDEWEB)

    Chen, F.; Zhu, Y.; Liu, S.; Qi, Y.; Hwang, H. Y.; Brandt, N. C.; Lu, J.; Quirin, F.; Enquist, H.; Zalden, P.; Hu, T.; Goodfellow, J.; Sher, M. -J.; Hoffmann, M. C.; Zhu, D.; Lemke, H.; Glownia, J.; Chollet, M.; Damodaran, A. R.; Park, J.; Cai, Z.; Jung, I. W.; Highland, M. J.; Walko, D. A.; Freeland, J. W.; Evans, P. G.; Vailionis, A.; Larsson, J.; Nelson, K. A.; Rappe, A. M.; Sokolowski-Tinten, K.; Martin, L. W.; Wen, H.; Lindenberg, A. M.

    2016-11-22

    The dynamical processes associated with electric field manipulation of the polarization in a ferroelectric remain largely unknown but fundamentally determine the speed and functionality of ferroelectric materials and devices. Here we apply subpicosecond duration, single-cycle terahertz pulses as an ultrafast electric field bias to prototypical BaTiO3 ferroelectric thin films with the atomic-scale response probed by femtosecond x-ray-scattering techniques. We show that electric fields applied perpendicular to the ferroelectric polarization drive large-amplitude displacements of the titanium atoms along the ferroelectric polarization axis, comparable to that of the built-in displacements associated with the intrinsic polarization and incoherent across unit cells. This effect is associated with a dynamic rotation of the ferroelectric polarization switching on and then off on picosecond time scales. These transient polarization modulations are followed by long-lived vibrational heating effects driven by resonant excitation of the ferroelectric soft mode, as reflected in changes in the c-axis tetragonality. The ultrafast structural characterization described here enables a direct comparison with first-principles-based molecular-dynamics simulations, with good agreement obtained.

  2. Electrical permeability and domain switching effect on fracture behavior of piezoelectric material

    Science.gov (United States)

    Kalyanam, Sureshkumar

    The crystal structure and domain microstructure within each grain of a piezoelectric material and 90°, 180° polarization switch observed experimentally are discussed. The work and internal energy density domain switching criteria are used to predict domain switch zones near crack tip of CT fracture specimen. Constitutive relations are modified to reflect changes in material properties and strains arising from domain switch. An incremental finite element solution procedure using UNIX program was developed to use ABAQUS piezoelectric FEA software along with FORTRAN codes for prediction and modeling of domain switching in piezoelectric material. Insulating materials like silicone oil are used by researchers to prevent electric arcing between crack faces during fracture tests with piezoelectric material. A finite element (UEL) was developed to model dielectric medium filling crack cavity of piezoelectric fracture test specimens. An iterative procedure was adopted to solve geometrically nonlinear crack opening using an UNIX program. The effect of permeability of crack cavity medium on near tip electric fields in CT fracture specimen was investigated. A CT fracture specimen was modeled using incremental domain switch finite element solution procedure. Domain switch zones in the vicinity of the crack tip were obtained for various electrical and mechanical fracture loads applied. The effect of actual crack profile on near tip domain switch zones, opening stress, stress intensity is discussed. A gradual polarization switch model which considers the gradual change in the average polarization direction from the original poling direction was developed. Fracture load predictions using stress intensity factor obtained from assuming linear material behavior, nonlinear behavior using the instantaneous and gradual polarization switch model are compared. Gradual polarization switch model was used to model a SENB fracture specimen to obtain the near tip strain field and compare it

  3. Multifunctional Material with Efficient Optoelectronic Integrated Molecular Switches Based on a Flexible Thin Film/Crystal.

    Science.gov (United States)

    Xu, Chang; Zhang, Wan-Ying; Ye, Qiong; Fu, Da-Wei

    2017-12-04

    Switchable materials, due to their potential applications in the fields of sensors, photonic devices, digital processing, etc., have been developed drastically. However, they still face great challenges in effectively inducing multiple molecular switching. Herein organic-inorganic hybrid compounds, an emerging class of hydrosoluble optoelectronic-active materials, welcome a new member with smart unique optical/electrical (fluorescence/dielectric) dual switches (switching ON/OFF), that is, [C 5 H 13 NBr][Cd 3 Br 7 ] (1) in the form of both a bulk crystal and an ultraflexible monodirectional thin film, which simultaneously exhibits fast dielectric/fluorescent dual switching triggered by an optical/thermal/electric signal with a high signal-to-noise ratio of 35 (the highest one in the known optical/dielectric dual molecular switches). Additionally, the exceptional stability/fatigue resistance as well as the fantastic extensibility/compactness of thin films (more than 10000 times folding over 90°), makes 1 an ideal candidate for single-molecule intelligent wearable devices and seamlessly integrated optoelectronic multiswitchable devices. This opens up a new route toward advanced light/electric high-performance switches/memories based on organic-inorganic hybrid compounds.

  4. ELABORATION AND DIELECTRIC CHARACTERIZATION OF A DOPED FERROELECTRIC MATERIAL TYPE PZT

    Directory of Open Access Journals (Sweden)

    M. Abba

    2013-12-01

    Full Text Available The main objective of this work is based on the synthesis and dielectric characterization of a new material in ceramic PZT with a perovskite structure ABO3. We are interested to study the Quaternary system (doping in site A and site B of general formula: Pb0.96Ba0.02Ca0.02[(Zr0.52Ti0.480.94(Zn1/3Ta2/30.03(In1/3Sb2/30.03]O3 short PZT-PBC-ZTIS. The sample selected for this study was prepared by the method of synthesis with solid way. Heat treatment was applied to these compositions at different temperatures: 1100, 1150,1180 and 1200 °C successively to optimize the sintering temperature optimal where the density of the sample is maximum (near theoretical density and therefore the product has better physical quality. The study of dielectric properties of all samples showed a high permittivity dielectric εr = 18018, low dielectric loss: tgδ = 7.62%, for the composition sintered to 1180 ° C included in the phase morphotropique zone (FMP.

  5. ELABORATION AND DIELECTRIC CHARACTERIZATION OF A DOPED FERROELECTRIC MATERIAL TYPE PZT

    Directory of Open Access Journals (Sweden)

    M. Abba

    2015-07-01

    Full Text Available The main objective of this work is based on the synthesis and dielectric characterization of a new material in ceramic PZT with a perovskite structure ABO3. We are interested to study the Quaternary system (doping in site A and site B of general formula: Pb0.96Ba0.02Ca0.02[(Zr0.52Ti0.480.94(Zn1/3Ta2/30.03(In1/3Sb2/30.03]O3 short PZT-PBC-ZTIS. The sample selected for this study was prepared by the method of synthesis with solid way. Heat treatment was applied to these compositions at different temperatures: 1100, 1150,1180 and 1200 °C successively to optimize the sintering temperature optimal where the density of the sample is maximum (near theoretical density and therefore the product has better physical quality. The study of dielectric properties of all samples showed a high permittivity dielectric εr = 18018, low dielectric loss: tgδ = 7.62%, for the composition sintered to 1180 ° C included in the phase morphotropique zone (FMP.

  6. Ferroelectric properties of lead-free polycrystalline CaBi2Nb2O9 thin films on glass substrates

    Science.gov (United States)

    Ahn, Yoonho; Jang, Joonkyung; Son, Jong Yeog

    2016-03-01

    CaBi2Nb2O9 (CBNO) thin film, a lead-free ferroelectric material, was prepared on a Pt/Ta/glass substrate via pulsed laser deposition. The Ta film was deposited on the glass substrate for a buffer layer. A (115) preferred orientation of the polycrystalline CBNO thin film was verified via X-ray diffraction measurements. The CBNO thin film on a glass substrate exhibited good ferroelectric properties with a remnant polarization of 4.8 μC/cm2 (2Pr ˜9.6 μC/cm2), although it had lower polarization than the epitaxially c-oriented CBNO thin film reported previously. A mosaic-like ferroelectric domain structure was observed via piezoresponse force microscopy. Significantly, the polycrystalline CBNO thin film showed much faster switching behavior within about 100 ns than that of the epitaxially c-oriented CBNO thin film.

  7. Multiscale modeling for ferroelectric materials: identification of the phase-field model’s free energy for PZT from atomistic simulations

    International Nuclear Information System (INIS)

    Völker, Benjamin; Landis, Chad M; Kamlah, Marc

    2012-01-01

    Within a knowledge-based multiscale simulation approach for ferroelectric materials, the atomic level can be linked to the mesoscale by transferring results from first-principles calculations into a phase-field model. A recently presented routine (Völker et al 2011 Contin. Mech. Thermodyn. 23 435–51) for adjusting the Helmholtz free energy coefficients to intrinsic and extrinsic ferroelectric material properties obtained by DFT calculations and atomistic simulations was subject to certain limitations: caused by too small available degrees of freedom, an independent adjustment of the spontaneous strains and piezoelectric coefficients was not possible, and the elastic properties could only be considered in cubic instead of tetragonal symmetry. In this work we overcome such restrictions by expanding the formulation of the free energy function, i.e. by motivating and introducing new higher-order terms that have not appeared in the literature before. Subsequently we present an improved version of the adjustment procedure for the free energy coefficients that is solely based on input parameters from first-principles calculations performed by Marton and Elsässer, as documented in Völker et al (2011 Contin. Mech. Thermodyn. 23 435–51). Full sets of adjusted free energy coefficients for PbTiO 3 and tetragonal Pb(Zr,Ti)O 3 are presented, and the benefits of the newly introduced higher-order free energy terms are discussed. (paper)

  8. Switching Casimir forces with phase-change materials

    NARCIS (Netherlands)

    Torricelli, G.; van Zwol, P. J.; Shpak, O.; Binns, C.; Palasantzas, G.; Kooi, B. J.; Svetovoy, V. B.; Wuttig, M.

    2010-01-01

    We demonstrate here a controllable variation in the Casimir force. Changes in the force of up to 20% at separations of similar to 100 nm between Au and Ag-In-Sb-Te (AIST) surfaces were achieved on crystallization of an amorphous sample of AIST. This material is well known for its structural

  9. Magnetic enhancement of ferroelectric polarization in a self-grown ferroelectric-ferromagnetic composite

    Science.gov (United States)

    Kumar, Amit; Narayan, Bastola; Pachat, Rohit; Ranjan, Rajeev

    2018-02-01

    Ferroelectric-ferromagnetic multiferroic composites are of great interest both from the scientific and technological standpoints. The extent of coupling between polarization and magnetization in such two-phase systems depends on how efficiently the magnetostrictive and electrostrictive/piezoelectric strain gets transferred from one phase to the other. This challenge is most profound in the easy to make 0-3 ferroelectric-ferromagnetic particulate composites. Here we report a self-grown ferroelectric-ferromagnetic 0-3 particulate composite through controlled spontaneous precipitation of ferrimagnetic barium hexaferrite phase (BaF e12O19 ) amid ferroelectric grains in the multiferroic alloy system BiFe O3-BaTi O3 . We demonstrate that a composite specimen exhibiting merely ˜1% hexaferrite phase exhibits ˜34% increase in saturation polarization in a dc magnetic field of ˜10 kOe. Using modified Rayleigh analysis of the polarization field loop in the subcoercive field region we argue that the substantial enhancement in the ferroelectric switching is associated with the reduction in the barrier heights of the pinning centers of the ferroelectric-ferroelastic domain walls in the stress field generated by magnetostriction in the hexaferrite grains when the magnetic field is turned on. Our study proves that controlled precipitation of the magnetic phase is a good strategy for synthesis of 0-3 ferroelectric-ferromagnetic particulate multiferroic composite as it not only helps in ensuring a good electrical insulating character of the composite, enabling it to sustain high enough electric field for ferroelectric switching, but also the factors associated with the spontaneity of the precipitation process ensure efficient transfer of the magnetostrictive strain/stress to the surrounding ferroelectric matrix making domain wall motion easy.

  10. Photoelectron spectroscopic and microspectroscopic probes of ferroelectrics

    Science.gov (United States)

    Tǎnase, Liviu C.; Abramiuc, Laura E.; Teodorescu, Cristian M.

    2017-12-01

    This contribution is a review of recent aspects connected with photoelectron spectroscopy of free ferroelectric surfaces, metals interfaced with these surfaces, graphene-like layers together with some exemplifications concerning molecular adsorption, dissociations and desorptions occurring from ferroelectrics. Standard photoelectron spectroscopy is used nowadays in correlation with other characterization techniques, such as piezoresponse force microscopy, high resolution transmission electron spectroscopy, and ferroelectric hysteresis cycles. In this work we will concentrate mainly on photoelectron spectroscopy and spectro-microscopy characterization of ferroelectric thin films, starting from atomically clean ferroelectric surfaces of lead zirco-titanate, then going towards heterostructures using this material in combination with graphene-like carbon layers or with metals. Concepts involving charge accumulation and depolarization near surface will be revisited by taking into account the newest findings in this area.

  11. Ferroelectric Electron Emission Principles and Technology

    CERN Document Server

    Riege, H

    1997-01-01

    The spontaneous electrical polarization of ferroelectric materials can be changed either by reversal or by phase transition from a ferroelectric into a non-ferroelectric state or vice versa. If spontaneous polarization changes are induced with fast heat, mechanical pressure, laser or electric field pulses on a submicrosecond time scale, strong uncompensated surface charge densities and related polarization fields are generated, which may lead to the intense self-emission of electrons from the negatively charged free surface areas of the ferroelectric sample. Hence, electron guns can be built with extraction-field-free ferroelectric cathodes, which may be easily separated from the high-field regions of post-accelerating gap structures. The intensity, the energy, the temporal and spatial distribution, and the repetitition rate of the emitted electron beams can be controlled within wide limits via the excitation pulses and external focusing and accelerating electromagnetic fields. The technological advantages an...

  12. Features and Technology of Ferroelectric Electron Emission

    CERN Document Server

    Boscolo, I; Herleb, U; Riege, H

    1998-01-01

    Spontaneous electrical polarization of ferroelectric materials can be changed either by reversal or by phase transition from a ferroelectric into a non-polar state or vice versa. If spontaneous polarization changes are induced at a submicrosecond time-scale, strong uncompensated surface charge densities and related fields are generated, which may lead to the intense self-emission of electrons from the negatively-charged free surface areas of the ferroelectric cathode. The nature of this self-emission differs essentially from other methods of ferroelectric electron emission and from conventional electron emission in that the latter methods are only achieved by extracting electrons with externally applied electric fields. When electron guns are constructed with ferroelectric cathodes, new design criteria have to be taken into account. The intensity, the energy, the temporal and spatial distribution and the repetition rate of the emitted electron beams can be adjusted within wide limits. The advantages of ferroe...

  13. Engineered Multifunctional Nanophotonic Materials for Ultrafast Optical Switching

    Science.gov (United States)

    2012-11-02

    copolymers and other highly nonlinear materials, we have designed one and two photonic band gap ( PBG ) devices that function as nonlinear reflectors (Figure...a highly reflecting Bragg mirror. If a single PBG is used, the Bragg condition results in protection over an approximately 50nm bandwidth for 20...layer pairs. However, for the same 20 layer pairs, a two PBG device 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 Input Peak Irradiance (GW/cm2

  14. Ferroelectric domain structures of epitaxial CaBi2Nb2O9 thin films on single crystalline Nb doped (1 0 0) SrTiO3 substrates

    Science.gov (United States)

    Ahn, Yoonho; Seo, Jeong Dae; Son, Jong Yeog

    2015-07-01

    Epitaxial CaBi2Nb2O9 (CBNO) thin films were deposited on Nb-doped SrTiO3 substrates. The CBNO thin films as a lead-free ferroelectric material exhibit a good ferroelectric property with the remanent polarization of 10.6 μC/cm2. In the fatigue resistance test, the CBNO thin films have no degradation in polarization up to 1×1012 switching cycles, which is applicable for non-volatile ferroelectric random access memories (FeRAMs). Furthermore, piezoresponse force microscopy study (PFM) reveals that the CBNO thin films have larger ferroelectric domain structures than those of PbTiO3 thin films. From the Landau, Lifshiftz, and Kittel's scaling law, it is inferred that the domain wall energy of CBNO thin films is probably very similar to that of the PbTiO3 thin films.

  15. Mechanistic studies for optical switching materials for space environments

    Science.gov (United States)

    Rayfield, George W.; Sarkar, Abhijit; Rahman, Salma; Godschalx, James P.; Taylor, Edward W.

    2010-09-01

    Optical power limiters (OPLs) are nonlinear optical (NLO) devices that limit the amount of energy transmitted in an optical system. At low incident optical power or pulse energy, the transmission of the system is high enough to allow nominal operation of the system. At high incident optical power or pulse energy, the transmission decreases to protect sensitive components such as optical receivers or transmitters. The interest OPLs for use in the space environment is due to the increasingly large number of space based missions and devices that require laser protection from laser beam is coming from, an enemy, misaligned laser in equipment, etc. Temperature and space radiation-induced effects in optical and electronic materials are well known and they can cause disruption in OPL functions, or in the worst case, failure of the sensor. Recently, certain hyperbranched polymer-based composites containing OPL chromophores have been developed that offer high OPL performance and have been shown to function in a simulated + space environment. One novel high performance polymer material containing carbon nanotubes (CNT) covalently attached to the polymer host is promising. Preliminary light scattering measurements suggest that nonlinear scattering is not the primary mechanism for OPL performance.

  16. Evaluation of the contact switch materials in high voltage power supply for generate of underwater shockwave by electrical discharge

    Directory of Open Access Journals (Sweden)

    K Higa

    2016-10-01

    Full Text Available We have developed the high voltage power-supply unit by Cockcroft-Walton circuit for ingenerate high pressure due to underwater shockwave by electrical discharge. This high voltage power supply has the problem of the metal contact switch operation that contact switch stop by melting and bonding due to electrical spark. We have studied the evaluation of materials of contact switch for the reducing electrical energy loss and the problem of contact switch operation. In this research, measurement of discharge voltage and high pressure due to underwater shockwave was carried out using the contact switch made of different materials as brass plate, brass-carbon plate-brass and carbon block. The contact switch made of carbon is effective to reduce energy loss and problem of contactor switch operation.

  17. Design of advanced multicomponent ferroelectric liquid crystalline mixtures with submicrometre helical pitch

    Czech Academy of Sciences Publication Activity Database

    Kurp, K.; Czerwiński, M.; Tykarska, M.; Bubnov, Alexej

    2017-01-01

    Roč. 44, č. 4 (2017), s. 748-756 ISSN 0267-8292 R&D Projects: GA MŠk 7AMB13PL041; GA MŠk(CZ) LD14007; GA ČR GA15-02843S Grant - others:COST Association EU(XE) COST Action IC1208 Institutional support: RVO:68378271 Keywords : ferroelectric liquid crystal * self-assembling materials * submicrometre helical pitch * room temperature mixture * switching time Subject RIV: JJ - Other Materials OBOR OECD: Nano-materials (production and properties) Impact factor: 2.661, year: 2016

  18. A Temperature-Dependent Hysteresis Model for Relaxor Ferroelectric Compounds

    National Research Council Canada - National Science Library

    Raye, Julie K; Smith, Ralph C

    2004-01-01

    This paper summarizes the development of a homogenized free energy model which characterizes the temperature-dependent hysteresis and constitutive nonlinearities inherent to relaxor ferroelectric materials...

  19. EXPERIMENTATION OF THREE PHASE OUTER ROTATING SWITCHED RELUCTANCE MOTOR WITH SOFT MAGNETIC COMPOSITE MATERIALS

    Directory of Open Access Journals (Sweden)

    N. C. LENIN

    2017-01-01

    Full Text Available This paper presents the application of Soft Magnetic Composite (SMC material in Outer Rotating Switched Reluctance Motor (ORSRM. The presented stator core of the Switched Reluctance Motor was made of two types of material, the classical laminated silicon steel sheet and the soft magnetic composite material. First, the stator core made of laminated steel has been analysed. The next step is to analyse the identical geometry SRM with the soft magnetic composite material, SOMALOY for its stator core. The comparisons of both cores include the calculated torque and torque ripple, magnetic conditions, simplicity of fabrication and cost. The finite element method has been used to analyse the magnetic conditions and the calculated torque. Finally, tested results shows that SMC is a better choice for SRM in terms of torque ripple and power density.

  20. Ferroelectric domain continuity over grain boundaries

    DEFF Research Database (Denmark)

    Mantri, Sukriti; Oddershede, Jette; Damjanovic, Dragan

    2017-01-01

    Formation and mobility of domain walls in ferroelectric materials is responsible for many of their electrical and mechanical properties. Domain wall continuity across grain boundaries has been observed since the 1950's and is speculated to affect the grain boundary-domain interactions, thereby...... techniques in manipulating the micro-structure and domain structure to result in desired interactions between neighbouring grains could prove to be beneficial for future polycrystalline ferroelectric materials....

  1. Logic computation in phase change materials by threshold and memory switching.

    Science.gov (United States)

    Cassinerio, M; Ciocchini, N; Ielmini, D

    2013-11-06

    Memristors, namely hysteretic devices capable of changing their resistance in response to applied electrical stimuli, may provide new opportunities for future memory and computation, thanks to their scalable size, low switching energy and nonvolatile nature. We have developed a functionally complete set of logic functions including NOR, NAND and NOT gates, each utilizing a single phase-change memristor (PCM) where resistance switching is due to the phase transformation of an active chalcogenide material. The logic operations are enabled by the high functionality of nanoscale phase change, featuring voltage comparison, additive crystallization and pulse-induced amorphization. The nonvolatile nature of memristive states provides the basis for developing reconfigurable hybrid logic/memory circuits featuring low-power and high-speed switching. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Optical temperature sensing by upconversion luminescence of Er doped Bi5TiNbWO15ferroelectric materials

    Directory of Open Access Journals (Sweden)

    Hua Zou

    2014-12-01

    Full Text Available The Er3+ doped Bi5TiNbWO15 ceramics have been synthesized using conventional solid-state reaction techniques. The crystal structure, ferroelectric properties, UC emission properties and especially the temperature sensing behaviors were systematically studied. With increasing Er3+ content, the investigation of XRD pattern, the ferroelectric loop and the UC emission indicated that the Er3+ ions dopants preferentially substituted the A sites of Bi3TiNbO9 and then Bi2WO6. Based on fluorescence intensity ratio (FIR technique, the observed results implied the ceramics were promising candidates for temperature sensors in the temperature range of 175 K −550 K. More importantly, this study provided a contrast of temperature sensitivity between emission from the same part (Bi3TiNbO9 in bismuth layered-structure and emission from the different part (Bi3TiNbO9 and Bi2WO6 in bismuth layered-structure for the first time.

  3. Glucose Suppresses Biological Ferroelectricity in Aortic Elastin

    Science.gov (United States)

    Liu, Yuanming; Wang, Yunjie; Chow, Ming-Jay; Chen, Nataly Q.; Ma, Feiyue; Zhang, Yanhang; Li, Jiangyu

    2013-04-01

    Elastin is an intriguing extracellular matrix protein present in all connective tissues of vertebrates, rendering essential elasticity to connective tissues subjected to repeated physiological stresses. Using piezoresponse force microscopy, we show that the polarity of aortic elastin is switchable by an electrical field, which may be associated with the recently discovered biological ferroelectricity in the aorta. More interestingly, it is discovered that the switching in aortic elastin is largely suppressed by glucose treatment, which appears to freeze the internal asymmetric polar structures of elastin, making it much harder to switch, or suppressing the switching completely. Such loss of ferroelectricity could have important physiological and pathological implications from aging to arteriosclerosis that are closely related to glycation of elastin.

  4. A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory.

    Science.gov (United States)

    Fang, Huajing; Li, Qiang; He, Wenhui; Li, Jing; Xue, Qingtang; Xu, Chao; Zhang, Lijing; Ren, Tianling; Dong, Guifang; Chan, H L W; Dai, Jiyan; Yan, Qingfeng

    2015-11-07

    We demonstrate an integrated module of self-powered ferroelectric transistor memory based on the combination of a ferroelectric FET and a triboelectric nanogenerator (TENG). The novel TENG was made of a self-assembled polystyrene nanosphere array and a poly(vinylidene fluoride) porous film. Owing to this unique structure, it exhibits an outstanding performance with an output voltage as high as 220 V per cycle. Meanwhile, the arch-shaped TENG is shown to be able to pole a bulk ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) single crystal directly. Based on this effect, a bottom gate ferroelectric FET was fabricated using pentacene as the channel material and a PMN-PT single crystal as the gate insulator. Systematic tests illustrate that the ON/OFF current ratio of this transistor memory element is approximately 10(3). More importantly, we demonstrate the feasibility to switch the polarization state of this FET gate insulator, namely the stored information, by finger tapping the TENG with a designed circuit. These results may open up a novel application of TENGs in the field of self-powered memory systems.

  5. Electron Emission from Ferroelectric/Antiferroelectric Cathodes Excited by Short High-Voltage Pulses

    CERN Document Server

    Benedek, G; Handerek, J; Riege, H

    1997-01-01

    Un-prepoled Lead Zirconate Titanate Lanthanum doped-PLZT ferroelectric cathodes have emitted intense current pulses under the action of a high voltage pulse of typically 8 kV/cm for PLZT of 8/65/35 composition and 25 kV/cm for PLZT of 4/95/5 composition. In the experiments described in this paper, the exciting electric field applied to the sample is directed from the rear surface towards the emitting surface. The resulting emission is due to an initial field emission from the metal of the grid deposited over the emitting surface with the consequent plasma formation and the switching of ferroelectric domains. These electrons may be emitted directly form the crystal or from the plasma. This emission requires the material in ferroelectric phase. In fact, PLZT cathodes of the 8/65/35 type, that is with high Titanium content, showing ferroelectric-paraelectric phase sequence, emit at room temperature, while PLZT cathodes of the 4/95/5 type, that is with low Titanium content, having antiferro-ferro-paraelectric pha...

  6. Flexoelectric Induced Caloric Effect in Truncated Pyramid Shaped Ba0.67Sr0.33TiO3 Ferroelectric Material

    Science.gov (United States)

    Patel, Satyanarayan; Chauhan, Aditya; Madhar, Niyaz Ahamad; Ilahi, Bouraoui; Vaish, Rahul

    2017-07-01

    Solid state refrigeration based on ferroelectric materials can potentially be competing in not-in-kind refrigeration technology. However, their functionality is currently limited to Curie temperatures. Through this article, authors have attempted to describe an unexplored component of the stress-driven caloric effect, obtainable beyond the Curie point. The phenomenon, termed as the flexocaloric effect (FCE), relies on inhomogeneous straining of the crystal lattice to induce polarization in centrosymmetric crystals (flexoelectricity). For this study, a truncated pyramid geometry was selected, and the dependence of sample height on caloric capacity was studied. A peak temperature change of 1.75 K (313 K) was estimated for Ba0.67Sr0.33TiO3 (BST) ceramics employing a truncated pyramid configuration.

  7. Defect induced room temperature ferromagnetism in lead-free ferroelectric Bi0.5K0.5TiO3 materials

    Science.gov (United States)

    Tuan, N. H.; Thiet, D. V.; Odkhuu, D.; Bac, L. H.; Binh, P. V.; Dung, D. D.

    2018-03-01

    Development the multiferroic materials based on the lead-free ferroelectric materials is the new possible channel to create the next generation devices. The pure Bi0.5K0.5TiO3 and Mn-doped Bi0.5K0.5TiO3 materials were synthesized using sol-gel method. While the substitution of Mn for Ti site reduces the optical band gap in Bi0.5K0.5TiO3, the room temperature ferromagnetism is obtained in both un-doped and Mn-doped Bi0.5K0.5TiO3 materials. By means of the first-principles calculations, the ferromagnetism in Mn-doped Bi0.5K0.5TiO3 materials can be explained by the mixed valence states of Mn ions through the crystal field mechanism and that in un-doped Bi0.5K0.5TiO3 materials is ascribed to the formation of O or Ti vacancies during the sample growth.

  8. Electro-optic and dielectric properties of new binary ferroelectric and antiferroelectric liquid crystalline mixtures

    Czech Academy of Sciences Publication Activity Database

    Fitas, J.; Marzec, M.; Kurp, K.; Żurowska, M.; Tykarska, M.; Bubnov, Alexej

    2017-01-01

    Roč. 44, č. 9 (2017), s. 1468-1476 ISSN 0267-8292 R&D Projects: GA MŠk(CZ) LD14007; GA ČR GA15-02843S Grant - others:EU - ICT(XE) COST Action IC1208 Institutional support: RVO:68378271 Keywords : liquid crystals * ferroelectric and antiferroelectric phase * binary mixture * dielectric spectroscopy * switching time * tilt angle Subject RIV: JJ - Other Materials OBOR OECD: Nano-materials (production and properties) Impact factor: 2.661, year: 2016

  9. Negative capacitance in a ferroelectric capacitor.

    Science.gov (United States)

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  10. SISGR -- Domain Microstructures and Mechanisms for Large, Reversible and Anhysteretic Strain Behaviors in Phase Transforming Ferroelectric Materials

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yu U. [Michigan Technological Univ., Houghton, MI (United States)

    2013-12-06

    This four-year project (including one-year no-cost extension) aimed to advance fundamental understanding of field-induced strain behaviors of phase transforming ferroelectrics. We performed meso-scale phase field modeling and computer simulation to study domain evolutions, mechanisms and engineering techniques, and developed computational techniques for nanodomain diffraction analysis; to further support above originally planned tasks, we also carried out preliminary first-principles density functional theory calculations of point defects and domain walls to complement meso-scale computations as well as performed in-situ high-energy synchrotron X-ray single crystal diffraction experiments to guide theoretical development (both without extra cost to the project thanks to XSEDE supercomputers and DOE user facility Advanced Photon Source).

  11. Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gruverman, Alexei [Univ. of Nebraska, Lincoln, NE (United States); Tsymbal, Evgeny Y. [Univ. of Nebraska, Lincoln, NE (United States); Eom, Chang-Beom [Univ. of Wisconsin, Madison, WI (United States)

    2017-05-03

    This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

  12. Impact of oxygen ambient on ferroelectric properties of polar-axis-oriented CaBi4Ti4O15 films

    Science.gov (United States)

    Kato, Kazumi; Tanaka, Kiyotaka; Suzuki, Kazuyuki; Kimura, Tatsuo; Nishizawa, Kaori; Miki, Takeshi

    2005-03-01

    Polar-axis oriented CaBi4Ti4O15(CBTi144) films were fabricated on Pt foils using a complex metal alkoxide solution. The oxygen ambient during crystallization of the films impacted the crystal perfection, crystallite size, and the ferroelectric properties. The 500mm thick film crystallized in oxygen flow had single columnar structure and in-plane grain size of about 200nm. The Scherrer's crystallite diameter was calculated as about 110nm. The ferroelectric properties were improved. The Pr and Ec of the film enhanced as 33.6μC /cm2 and 357kV /cm, respectively, at an applied voltage of 50V. Voltage applied for full polarization switching was lowered by controlling oxygen stoichiometry of the film. Indeed, the polar-axis-oriented CBTi144 films would open up possibilities for devices as Pb-free ferroelectric materials.

  13. Ferroelectric ferrimagnetic LiFe2F6 : Charge-ordering-mediated magnetoelectricity

    Science.gov (United States)

    Lin, Ling-Fang; Xu, Qiao-Ru; Zhang, Yang; Zhang, Jun-Jie; Liang, Yan-Ping; Dong, Shuai

    2017-12-01

    Trirutile-type LiFe2F6 is a charge-ordered material with an Fe2 +/Fe3 + configuration. Here, its physical properties, including magnetism, electronic structure, phase transition, and charge ordering, are studied theoretically. On one hand, the charge ordering leads to improper ferroelectricity with a large polarization. On the other hand, its magnetic ground state can be tuned from the antiferromagnetic to ferrimagnetic by moderate compressive strain. Thus, LiFe2F6 can be a rare multiferroic with both large magnetization and polarization. Most importantly, since the charge ordering is the common ingredient for both ferroelectricity and magnetization, the net magnetization may be fully switched by flipping the polarization, rendering intrinsically strong magnetoelectric effects and desirable functions.

  14. Ferroelectric nanostructure having switchable multi-stable vortex states

    Science.gov (United States)

    Naumov, Ivan I [Fayetteville, AR; Bellaiche, Laurent M [Fayetteville, AR; Prosandeev, Sergey A [Fayetteville, AR; Ponomareva, Inna V [Fayetteville, AR; Kornev, Igor A [Fayetteville, AR

    2009-09-22

    A ferroelectric nanostructure formed as a low dimensional nano-scale ferroelectric material having at least one vortex ring of polarization generating an ordered toroid moment switchable between multi-stable states. A stress-free ferroelectric nanodot under open-circuit-like electrical boundary conditions maintains such a vortex structure for their local dipoles when subject to a transverse inhomogeneous static electric field controlling the direction of the macroscopic toroidal moment. Stress is also capable of controlling the vortex's chirality, because of the electromechanical coupling that exists in ferroelectric nanodots.

  15. Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials

    Science.gov (United States)

    Li, Xiaoli; Jia, Juan; Li, Yanchun; Bai, Yuhao; Li, Jie; Shi, Yana; Wang, Lanfang; Xu, Xiaohong

    2016-09-01

    Combining resistive switching and magnetoresistance in a system exhibits great potential for application in multibit nonvolatile data storage. It is in significance and difficulty to seek a material with resistances that can be stably switched at different resistance states modulated by an electrical field and a magnetic field. In this paper, we propose a novel electrode/ZnO/ZnO-Co/electrode device in which the storage layer combines a nanostructured ZnO-Co layer and a ZnO layer. The device exhibits bipolar resistive switching characteristics, which can be explained by the accumulation of oxygen vacancies due to the migration of oxygen ions by external electrical stimuli and the contribution of Co particles in the ZnO-Co layer. Moreover, the magnetoresistance effect at room temperature can be observed in the device at high and low resistance states. Therefore, through electrical and magnetic control, four resistance states are achieved in this system, presenting a new possibility towards enhancing data densities by many folds.

  16. Sialic Acid-Responsive Polymeric Interface Material: From Molecular Recognition to Macroscopic Property Switching

    Science.gov (United States)

    Xiong, Yuting; Jiang, Ge; Li, Minmin; Qing, Guangyan; Li, Xiuling; Liang, Xinmiao; Sun, Taolei

    2017-01-01

    Biological systems that utilize multiple weak non-covalent interactions and hierarchical assemblies to achieve various bio-functions bring much inspiration for the design of artificial biomaterials. However, it remains a big challenge to correlate underlying biomolecule interactions with macroscopic level of materials, for example, recognizing such weak interaction, further transforming it into regulating material’s macroscopic property and contributing to some new bio-applications. Here we designed a novel smart polymer based on polyacrylamide (PAM) grafted with lactose units (PAM-g-lactose0.11), and reported carbohydrate-carbohydrate interaction (CCI)-promoted macroscopic properties switching on this smart polymer surface. Detailed investigations indicated that the binding of sialic acid molecules with the grafted lactose units via the CCIs induced conformational transformation of the polymer chains, further resulted in remarkable and reversible switching in surface topography, wettability and stiffness. With these excellent recognition and response capacities towards sialic acid, the PAM-g-lactose0.11 further facilitated good selectivity, strong anti-interference and high adsorption capacity in the capture of sialylated glycopeptides (important biomarkers for cancers). This work provides some enlightenment for the development of biointerface materials with tunable property, as well as high-performance glycopeptide enrichment materials.

  17. Low-power switching of phase-change materials with carbon nanotube electrodes.

    Science.gov (United States)

    Xiong, Feng; Liao, Albert D; Estrada, David; Pop, Eric

    2011-04-29

    Phase-change materials (PCMs) are promising candidates for nonvolatile data storage and reconfigurable electronics, but high programming currents have presented a challenge to realize low-power operation. We controlled PCM bits with single-wall and small-diameter multi-wall carbon nanotubes. This configuration achieves programming currents of 0.5 microampere (set) and 5 microamperes (reset), two orders of magnitude lower than present state-of-the-art devices. Pulsed measurements enable memory switching with very low energy consumption. Analysis of over 100 devices finds that the programming voltage and energy are highly scalable and could be below 1 volt and single femtojoules per bit, respectively.

  18. Effect of domains configuration on crystal structure in ferroelectric ...

    Indian Academy of Sciences (India)

    2017-09-09

    Sep 9, 2017 ... high piezoelectric response of ferroelectrics material can be achieved at the morphotropic phase boundary (MPB) region among two ferroelectric phases in their phase diagrams due to a low polarization anisotropy caused by the phase instabil- ity [6,7]. Nevertheless, the exact structure at MPB region is.

  19. Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation.

    Science.gov (United States)

    Kim, Yu Jin; Park, Hyeon Woo; Hyun, Seung Dam; Kim, Han Joon; Kim, Keum Do; Lee, Young Hwan; Moon, Taehwan; Lee, Yong Bin; Park, Min Hyuk; Hwang, Cheol Seong

    2017-12-13

    Ferroelectric (FE) capacitor is a critical electric component in microelectronic devices. Among many of its intriguing properties, the recent finding of voltage drop (V-drop) across the FE capacitor while the positive charges flow in is especially eye-catching. This finding was claimed to be direct evidence that the FE capacitor is in negative capacitance (NC) state, which must be useful for (infinitely) high capacitance and ultralow voltage operation of field-effect transistors. Nonetheless, the NC state corresponds to the maximum energy state of the FE material, so it has been widely accepted in the community that the material alleviates that state by forming ferroelectric domains. This work reports a similar V-drop effect from the 150 nm thick epitaxial BaTiO 3 ferroelectric thin film, but the interpretation was completely disparate; the V-drop can be precisely simulated by the reverse domain nucleation and propagation of which charge effect cannot be fully compensated for by the supplied charge from the external charge source. The disappearance of the V-drop effect was also observed by repeated FE switching only up to 10 cycles, which can hardly be explained by the involvement of the NC effect. The retained reverse domain nuclei even after the subsequent poling can explain such behavior.

  20. Giant flexoelectric polarization in a micromachined ferroelectric diaphragm

    KAUST Repository

    Wang, Zhihong

    2012-08-14

    The coupling between dielectric polarization and strain gradient, known as flexoelectricity, becomes significantly large on the micro- and nanoscale. Here, it is shown that giant flexoelectric polarization can reverse remnant ferroelectric polarization in a bent Pb(Zr0.52Ti0.48) O3 (PZT) diaphragm fabricated by micromachining. The polarization induced by the strain gradient and the switching behaviors of the polarization in response to an external electric field are investigated by observing the electromechanical coupling of the diaphragm. The method allows determination of the absolute zero polarization state in a PZT film, which is impossible using other existing methods. Based on the observation of the absolute zero polarization state and the assumption that bending of the diaphragm is the only source of the self-polarization, the upper bound of flexoelectric coefficient of PZT film is calculated to be as large as 2.0 × 10-4 C m -1. The strain gradient induced by bending the diaphragm is measured to be on the order of 102 m-1, three orders of magnitude larger than that obtained in the bulk material. Because of this large strain gradient, the estimated giant flexoelectric polarization in the bent diaphragm is on the same order of magnitude as the normal remnant ferroelectric polarization of PZT film. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. On the long-time behavior of ferroelectric systems

    Energy Technology Data Exchange (ETDEWEB)

    Greenberg, J. M.; MacCamy, R. C.; Coffman, C. V.

    2003-07-16

    In this note we investigate a new model for the behavior of ferroelectric materials. This model is analogous to one used in [1] to describe the dynamics of elastic materials which exhibit phase changes.

  2. A programmable high voltage electrical switching analyzer for I-V characterization of phase change materials

    CERN Document Server

    Bhanu Prashanth, S B

    2007-01-01

    Ovonic Phase-Change Materials have found a renewed interest in the recent times owing to their applications in Non-Volatile Random Access Memories. In the present work, a cost-effective high voltage electrical switching analyzer has been developed to enable investigations on the I-V characteristics and electrical switching of bulk solids, which are necessary for identifying suitable materials for memory and other applications such as power control. The developed set up mainly consists of a PC based programmable High Voltage DC Power Supply which acts as an excitation source and a high speed Digital Storage Oscilloscope. For flexible control options, a Graphical User Interface has also been developed using LabVIEW-6i to control the excitation source through the analog outputs of a data acquisition card. Options are made in the system to sweep the output voltage from 45 to 1750 V or the output current in the range 0-45 mA with resolutions of 1.5 V & 5 or 50 μA at variable rates. I-V characteristics and swi...

  3. Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials

    Science.gov (United States)

    Lee, Myung-Won; Pearson, Christopher; Moon, Tae Jung; Fisher, Alison L.; Petty, Michael C.

    2014-12-01

    We report on the effects of device processing conditions, and of changing the electrode materials, on the switching and negative differential resistance (NDR) behaviour of metal/organic thin film/metal structures. The organic material was an ambipolar molecule containing both electron transporting (oxadiazole) and hole transporting (carbazole) chemical groups. Switching and NDR effects are observed for device architectures with both electrodes consisting of aluminium; optimized switching behaviour is achieved for structures incorporating gold nanoparticles. If one of the Al electrodes is replaced by a higher work function metal or coated with an electron-blocking layer, switching and NDR are no longer observed. The results are consistent with a model based on the creation and destruction of Al filaments within the thin organic layer.

  4. An overview of self-switching diode rectifiers using green materials

    Science.gov (United States)

    Kasjoo, Shahrir Rizal; Zailan, Zarimawaty; Zakaria, Nor Farhani; Isa, Muammar Mohamad; Arshad, Mohd Khairuddin Md; Taking, Sanna

    2017-09-01

    A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar architecture of SSD not only makes the fabrication process of the device faster, simpler and at a lower cost when compared with other rectifying diodes, but also allows the use of various materials to realize and fabricate SSDs. This includes the utilization of `green' materials such as organic and graphene thin films for environmental sustainability. This paper reviews the properties of current `green' SSD rectifiers with respect to their operating frequencies and rectifying performances, including responsivity and noise-equivalent power of the devices, along with the applications.

  5. Ferroelectric molecular films for nanoscopic ultrahigh-density memories.

    Science.gov (United States)

    Matsushige, Kazumi; Yamada, Hirofumi

    2002-04-01

    The formation and visualization of nanometer-scale polarized domains in ultrathin ferroelectric molecular films by scanning-probe microscopy are described. These operations to the ferroelectric domains correspond to the "writing" and the "reading" process, respectively, for the data-storage application. In addition, nanometer-scale structures and the local electrical properties of the local domains, including the interface effect, are discussed. The achieved minimum diameter of the written ferroelectric domains was 30 nm. The size of the "recording" dot corresponds to the recording density of about 230 Gbit/in.(2). The "erasing" process by switching domains was also demonstrated. Furthermore, nanometer-scale ferroelectric domains using VDF oligomer molecular films were successfully formed, which has opened the way to the control of single molecular dipoles.

  6. Breaking of macroscopic centric symmetry in paraelectric phases of ferroelectric materials and implications for flexoelectricity

    OpenAIRE

    Biancoli, Alberto; Fancher, Chris M.; Jones, Jacob L.; Damjanovic, Dragan

    2015-01-01

    A centrosymmetric stress cannot induce a polar response in centric materials, piezoelectricity is, for example, possible only in non-centrosymmetric structures. An exception is meta-materials with shape asymmetry, which may be polarized by stress even when the material is centric. In this case the mechanism is flexoelectricity, which relates polarization to a strain gradient. The flexoelectric response scales inversely with size, thus a large effect is expected in nanoscale materials. Recent ...

  7. An Automated Ab Initio Framework for Identifying New Ferroelectrics

    Science.gov (United States)

    Smidt, Tess; Reyes-Lillo, Sebastian E.; Jain, Anubhav; Neaton, Jeffrey B.

    Ferroelectric materials have a wide-range of technological applications including non-volatile RAM and optoelectronics. In this work, we present an automated first-principles search for ferroelectrics. We integrate density functional theory, crystal structure databases, symmetry tools, workflow software, and a custom analysis toolkit to build a library of known and proposed ferroelectrics. We screen thousands of candidates using symmetry relations between nonpolar and polar structure pairs. We use two search strategies 1) polar-nonpolar pairs with the same composition and 2) polar-nonpolar structure type pairs. Results are automatically parsed, stored in a database, and accessible via a web interface showing distortion animations and plots of polarization and total energy as a function of distortion. We benchmark our results against experimental data, present new ferroelectric candidates found through our search, and discuss future work on expanding this search methodology to other material classes such as anti-ferroelectrics and multiferroics.

  8. Organic non-volatile memories from ferroelectric phase-separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago M.; de Boer, Bert; Blom, Paul W. M.

    2008-07-01

    New non-volatile memories are being investigated to keep up with the organic-electronics road map. Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two binary levels. However, in ferroelectric capacitors the read-out of the polarization charge is destructive. The functionality of the targeted memory should be based on resistive switching. In inorganic ferroelectrics conductivity and ferroelectricity cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. Here we present an integrated solution by blending semiconducting and ferroelectric polymers into phase-separated networks. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-metal contact. The combination of ferroelectric bistability with (semi)conductivity and rectification allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read out non-destructively. The concept of an electrically tunable injection barrier as presented here is general and can be applied to other electronic devices such as light-emitting diodes with an integrated on/off switch.

  9. Giant Electrocaloric Effect in Ferroelectrics with Tailored Polaw-Nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Qiming [Pennsylvania State Univ., University Park, PA (United States)

    2015-06-24

    Electrocaloric effect (ECE) is the temperature and/or entropy change in a dielectric material caused by an electric field induced polarization change. Although ECE has been studied since 1930s, the very small ECE observed in earlier studies in bulk materials before 2007 makes it not attractive for practical cooling applications. The objectives of this DOE program are to carry out a systematical scientific research on the entropy change and ECE in polar-dielectrics, especially ferroelectrics based on several fundamental hypotheses and to search for answers on a few scientific questions. Especially, this research program developed a series of polar-dielectric materials with controlled nano- and meso-structures and carried out studies on how these structures affect the polar-ordering, correlations, energy landscapes, and consequently the entropy states at different phases and ECE. The key hypotheses of the program include: (i) Whether a large ECE can be obtained near the ferroelectric-paraelectric (FE-PE) transition in properly designed ferroelectrics which possess large polarization P and large ß (the coefficient in the thermodynamic Landau theory where the Gibbs free energy G = G = G0+ ½ a P2 +1/4 b P4 + 1/6 c P6 – EP, and a = ß (T-Tc), where b,c,ß and Tc are constants)? (ii) What determines/determine ß? Whether a ferroelectric material with built-in disorders, which disrupt the polar-correlations and enabling a large number of local polar-states, such as a properly designed ferroelectric relaxor, can achieve a large ECE? (iii) How to design a ferroelectric material which has flat energy landscape so that the energy barriers for switching among different phases are vanishingly small? What are the necessary conditions to maximize the number of coexisting phases? (iv) How to design ferroelectric materials with a large tunable dielectric response? That is, at zero electric field, the material possesses very

  10. Room-temperature ferromagnetism in Fe-based perovskite solid solution in lead-free ferroelectric Bi0.5Na0.5TiO3 materials

    Science.gov (United States)

    Hung, Nguyen The; Bac, Luong Huu; Trung, Nguyen Ngoc; Hoang, Nguyen The; Van Vinh, Pham; Dung, Dang Duc

    2018-04-01

    The integration of ferromagnetism in lead-free ferroelectric materials is important to fabricate smart materials for electronic devices. In this work, (1 - x)Bi0.5Na0.5TiO3 + xMgFeO3-δ materials (x = 0-9 mol%) were prepared through sol-gel method. X-ray diffraction characterization indicated that MgFeO3-δ materials existed as a well solid solution in lead-free ferroelectric Bi0.5Na0.5TiO3 materials. The rhombohedral structure of Bi0.5Na0.5TiO3 materials was distorted due to the random distribution of Mg and Fe cations into the host lattice. The reduced optical band gap and the induced room-temperature ferromagnetism were due to the spin splitting of transition metal substitution at the B-site of perovskite Bi0.5Na0.5TiO3 and the modification by A-site co-substitution. This work elucidates the role of secondary phase as solid solution in Bi0.5Na0.5TiO3 material for development of lead-free multiferroelectric materials.

  11. Three-dimensional, time-resolved profiling of ferroelectric domain wall dynamics by spectral-domain optical coherence tomography

    Energy Technology Data Exchange (ETDEWEB)

    Haussmann, Alexander; Schmidt, Sebastian; Wehmeier, Lukas; Eng, Lukas M. [Technische Universitaet Dresden, Institute of Applied Physics and Center for Advancing Electronics Dresden (cfaed), Dresden (Germany); Kirsten, Lars; Cimalla, Peter; Koch, Edmund [Technische Universitaet Dresden, Faculty of Medicine Carl Gustav Carus, Anesthesiology and Intensive Care Medicine, Clinical Sensoring and Monitoring, Dresden (Germany)

    2017-08-15

    We apply here spectral-domain optical coherence tomography (SD-OCT) for the precise detection and temporal tracking of ferroelectric domain walls (DWs) in magnesium-doped periodically poled lithium niobate (Mg:PPLN). We reproducibly map static DWs at an axial (depth) resolution down to ∝ 0.6 μm, being located up to 0.5 mm well inside the single crystalline Mg:PPLN sample. We show that a full 3-dimensional (3D) reconstruction of the DW geometry is possible from the collected data, when applying a special algorithm that accounts for the nonlinear optical dispersion of the material. Our OCT investigation provides valuable reference information on the DWs' polarization charge distribution, which is known to be the key to the electrical conductivity of ferroelectric DWs in such systems. Hence, we carefully analyze the SD-OCT signal dependence both when varying the direction of incident polarization, and when applying electrical fields along the polar axis. Surprisingly, the large backreflection intensities recorded under extraordinary polarization are not affected by any electrical field, at least for field strengths below the switching threshold, while no significant signals above noise floor are detected under ordinary polarization. Finally, we employed the high-speed SD-OCT setup for the real-time DW tracking upon ferroelectric domain switching under high external fields. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Breaking of macroscopic centric symmetry in paraelectric phases of ferroelectric materials and implications for flexoelectricity.

    Science.gov (United States)

    Biancoli, Alberto; Fancher, Chris M; Jones, Jacob L; Damjanovic, Dragan

    2015-02-01

    A centrosymmetric stress cannot induce a polar response in centric materials; piezoelectricity is, for example, possible only in non-centrosymmetric structures. An exception is metamaterials with shape asymmetry, which may be polarized by stress even when the material is centric. In this case the mechanism is flexoelectricity, which relates polarization to a strain gradient. The flexoelectric response scales inversely with size, thus a large effect is expected in nanoscale materials. Recent experiments in polycrystalline, centrosymmetric perovskites (for example, (Ba, Sr)TiO3) have indicated values of flexoelectric coefficients that are orders of magnitude higher than theoretically predicted, promising practical applications based on bulk materials. We show that materials with unexpectedly large flexoelectric response exhibit breaking of the macroscopic centric symmetry through inhomogeneity induced by the high-temperature processing. The emerging electro-mechanical coupling is significant and may help to resolve the controversy surrounding the large apparent flexoelectric coefficients in this class of materials.

  13. Switching a ferroelectric film by asphyxiation

    Czech Academy of Sciences Publication Activity Database

    Hlinka, Jiří

    2009-01-01

    Roč. 2, - (2009), 8/1-8/2 ISSN 1943-2879 Institutional research plan: CEZ:AV0Z10100520 Keywords : ultrathin film * spontaneous electric polarization Subject RIV: BM - Solid Matter Physics ; Magnetism

  14. Giant Strain and Induced Ferroelectricity in Amorphous BaTiO3 Films under Poling

    Directory of Open Access Journals (Sweden)

    Pegah Mirzadeh Vaghefi

    2017-09-01

    Full Text Available We report an effect of giant surface modification of a 5.6 nm thick BaTiO3 film grown on Si (100 substrate under poling by conductive tip of a scanning probe microscope (SPM. The surface can be locally elevated by about 9 nm under −20 V applied during scanning, resulting in the maximum strain of 160%. The threshold voltage for the surface modification is about 12 V. The modified topography is stable enough with time and slowly decays after poling with the rate ~0.02 nm/min. Strong vertical piezoresponse after poling is observed, too. Combined measurements by SPM and piezoresponse force microscopy (PFM prove that the poled material develops high ferroelectric polarization that cannot be switched back even under an oppositely oriented electric field. The topography modification is hypothesized to be due to a strong Joule heating and concomitant interface reaction between underlying Si and BaTiO3. The top layer is supposed to become ferroelectric as a result of local crystallization of amorphous BaTiO3. This work opens up new possibilities to form nanoscale ferroelectric structures useful for various applications.

  15. Controlling Magnetic and Ferroelectric Order Through Geometry: Synthesis, Ab Initio Theory, Characterization of New Multi-Ferric Fluoride Materials

    Energy Technology Data Exchange (ETDEWEB)

    Halasyamani, Shiv [Univ. of Houston, TX (United States); Fennie, Craig [Cornell Univ., Ithaca, NY (United States)

    2016-11-03

    We have focused on the synthesis, characterization, and ab initio theory on multi-functional mixed-metal fluorides. With funding from the DOE, we have successfully synthesized and characterized a variety of mixed metal fluoride materials.

  16. Flexible graphene–PZT ferroelectric nonvolatile memory

    International Nuclear Information System (INIS)

    Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

    2013-01-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

  17. Fast Ferroelectric L-band Tuner

    International Nuclear Information System (INIS)

    Kazakov, S. Yu.; Yakovlev, V. P.; Hirshfield, J. L.; Kanareykin, A. D.; Nenasheva, E. A.

    2006-01-01

    Description is given of a preliminary conceptual design for a tuner that employs a new ferroelectric ceramic that allows fast changes in coupling between the SRF acceleration structure of a linac and the external RF feeding line. The switching time of this device is in the range of a few microseconds. Utilization of this tuner is predicted to decrease Ohmic losses in the acceleration structure and thereby to reduce the power consumption of the linac. Using parameters of the TESLA-800 collider as an example, it is shown that it may be possible to reduce the ac mains power consumption by 12 MW, or about by 10%. The design of the tuner that is described allows reduced pulsed and average heating of the ferroelectric ceramics

  18. Composition driven structural instability in perovskite ferroelectrics

    Directory of Open Access Journals (Sweden)

    Chao Xu

    2017-04-01

    Full Text Available Ferroelectric solid solutions usually exhibit enhanced functional properties at the morphotropic phase boundary separating two ferroelectric phases with different orientations of polarization. The underlying mechanism is generally associated with polarization rotational instability and the flattened free energy profile. In this work we show that the polarization extensional instability can also be induced at the morphotropic phase boundary beyond the reported polar-nonpolar phase boundary. The piezoelectricity enhanced by this mechanism exhibits excellent thermal stability, which helps to develop high performance piezoelectric materials with good temperature stability.

  19. Evaluation of the potential of optical switching materials for overheating protection of thermal solar collectors - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Huot, G.; Roecker, Ch.; Schueler, A.

    2008-01-15

    Providing renewable energy for domestic hot water production and space heating, thermal solar collectors are more and more widespread, and users' expectations with respect to performance and service lifetime are rising continuously. The durability of solar collector materials is a critical point as the collector lifetime should be at least 25 years. Overheating and the resulting stagnation of the collector is a common problem with solar thermal systems. During stagnation high temperatures lead to water evaporation, glycol degradation, and stresses in the collector with increasing pressure. Special precautions are necessary to release this pressure; only mechanical solutions exist nowadays. Additionally, the occurring elevated temperatures lead to degradation of the materials that compose collectors: seals, insulation materials, and also the selective coating which is the most important part of the collector. A promising way to achieve active cooling of collectors without any mechanical device for pressure release or collector emptying is to produce a selective coating which is able to switch its optical properties at a critical temperature Tc. An optical switch allows changing the selective coating efficiency; the goal is to obtain a coating with a poor selectivity above Tc (decreasing of absorptance, increasing of emittance). Obtaining self-cooling collectors will allow increasing collector surfaces on facades and roofs in order to get high efficiency and hot water production during winter without inconvenient overheating during summer. Optical switching of materials can be obtained by many ways. Inorganic and organic thermochromic compounds, and organic thermotropic coatings are the main types of switching coatings that have been studied at EPFL-LESO-PB. Aging studies of organic thermochromic paints fabricated at EPFL suggest that the durability of organic compounds might not be sufficient for glazed metallic collectors. First samples of inorganic coatings

  20. From antiferroelectricity to ferroelectricity in smectic mesophases ...

    Indian Academy of Sciences (India)

    PRAMANA c Indian Academy of Sciences. Vol. 61, No. 2. — journal of. August 2003 physics pp. 455–481. From antiferroelectricity to ferroelectricity in smectic mesophases formed by bent-core ... Hence, the materials themselves .... nar mesophases there is an energetic and entropic penalty resulting from the unfavourable.

  1. Organic non-volatile memories from ferroelectric phase separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

    2009-03-01

    Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

  2. Resistance switching in polyvinylidene fluoride (PVDF) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pramod, K.; Sahu, Binaya Kumar; Gangineni, R. B., E-mail: rameshg.phy@pondiuni.edu.in [Department of Physics, Pondicherry University, R. V. Nagar, Kalapet, Puducherry – 605014 (India)

    2015-06-24

    Polyvinylidene fluoride (PDVF), one of the best electrically active polymer material & an interesting candidate to address the electrical control of its functional properties like ferroelectricity, piezoelectricity, pyroelectricity etc. In the current work, with the help of spin coater and DC magnetron sputtering techniques, semi-crystallized PVDF thin films prominent in alpha phase is prepared in capacitor like structure and their electrical characterization is emphasized. In current-voltage (I-V) and resistance-voltage (R-V) measurements, clear nonlinearity and resistance switching has been observed for films prepared using 7 wt% 2-butanone and 7 wt% Dimethyl Sulfoxide (DMSO) solvents.

  3. Ferroelectrics under the Synchrotron Light: A Review

    Directory of Open Access Journals (Sweden)

    Luis E. Fuentes-Cobas

    2015-12-01

    Full Text Available Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS and X-ray absorption fine structure (XAFS experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described.

  4. Ferroelectrics under the Synchrotron Light: A Review

    Science.gov (United States)

    Fuentes-Cobas, Luis E.; Montero-Cabrera, María E.; Pardo, Lorena; Fuentes-Montero, Luis

    2015-01-01

    Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr) appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS) and X-ray absorption fine structure (XAFS) experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described. PMID:28787814

  5. The effect of dopant chirality on the properties of self-assembling materials with a ferroelectric order.

    Science.gov (United States)

    Węgłowska, Dorota; Perkowski, Paweł; Chrunik, Maciej; Czerwiński, Michał

    2018-03-21

    A series of achiral hockey stick-shaped molecules forming a tilted smectic I liquid crystal phase as well as one non-mesogenic chiral bistereogenic analogue were synthesized and characterized. Herein, we report an example of an achiral hockey stick-shaped compound exhibiting a smectic I phase with a direct transition to the isotropic phase for the first time. This occurrence was confirmed via polarized light microscopy, dielectric spectroscopy, and XRD studies. Homologues with an odd number of carbon atoms in the oligomethylene spacer chain exhibit a lower clearing point than members posessing an even number of carbon atoms in this chain; thus, a characteristic odd-even effect has been observed. The influence of the synthesized compounds with different degrees of chirality and similar chemical structures on the properties of the host compound with a chiral smectic C phase was investigated. A chiral compound forming a wide-temperature chiral smectic C phase without any additional mesophase and having a short helical pitch was selected as the host material for the creation of two bicomponent systems. The mesomorphism of each binary mixture was characterized using optical microscopy and differential scanning calorimetry. The helical pitch of every binary mixture, forming a chiral smectic C phase, was studied within its full phase temperature range. As expected, the chiral host compound in the smectic C* phase doped with the hockey stick-shaped mesogen exhibited a longer helical pitch and lower spontaneous polarization than the chiral host material. On the other hand, for the chiral host compound doped with a non-mesogenic analogue containing two chiral centres, the helical pitch was shorter, and the spontaneous polarization was higher. These results should be potentially applicable for the design of advanced functional multi-component mixtures useful for various applications. The mesogenic behaviour of one binary mixture, forming both the chiral smectic I and titled

  6. Differences in Tribological Behaviors upon Switching Fixed and Moving Materials of Tribo-pairs including Metal and Polymer.

    Science.gov (United States)

    Xu, Aijie; Tian, Pengyi; Wen, Shizhu; Guo, Fei; Hu, Yueqiang; Jia, Wenpeng; Dong, Conglin; Tian, Yu

    2017-10-12

    The coefficient of friction (COF) between two materials is usually believed to be an intrinsic property of the materials themselves. In this study, metals of stainless steel (304) and brass (H62), and polymers of polypropylene (PP) and polytetrafluoroethylene (PTFE) were tested on a standard ball-on-three-plates test machine. Significantly different tribological behaviors were observed when fixed and moving materials of tribo-pairs (metal/polymer) were switched. As an example, under the same applied load and rotating speed, the COF (0.49) between a rotating PP ball and three fixed H62 plates was approximately 2.3 times higher than that between switched materials of tribo-pairs. Meanwhile, the COF between H62 and PTFE was relatively stable. The unexpected tribological behaviors were ascribed to the thermal and mechanical properties of tribo-pairs. Theoretical analysis revealed that the differences in the maximum local temperature between switching the fixed and moving materials of tribo-pairs were consistent with the differences in the tested COF. This result indicated the precise prediction of the COF of two materials is complexcity, and that thermal and mechanical properties should be properly considered in designing tribo-pairs, because these properties may significantly affect tribological performance.

  7. Broadband nonvolatile photonic switching based on optical phase change materials: beyond the classical figure-of-merit.

    Science.gov (United States)

    Zhang, Qihang; Zhang, Yifei; Li, Junying; Soref, Richard; Gu, Tian; Hu, Juejun

    2018-01-01

    In this Letter, we propose a broadband, nonvolatile on-chip switch design in the telecommunication C-band with record low loss and crosstalk. The unprecedented device performance builds on: 1) a new optical phase change material (O-PCM) Ge 2 Sb 2 Se 4 Te 1 (GSST), which exhibits significantly reduced optical attenuation compared to traditional O-PCMs, and 2) a nonperturbative design that enables low-loss device operation beyond the classical figure-of-merit (FOM) limit. We further demonstrate that the 1-by-2 and 2-by-2 switches can serve as basic building blocks to construct nonblocking and nonvolatile on-chip switching fabric supporting arbitrary numbers of input and output ports.

  8. Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

    DEFF Research Database (Denmark)

    Phatak, C.; Petford-Long, A. K.; Beleggia, Marco

    2014-01-01

    Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We present...... a theoretical model describing how the shape of a nanoparticle affects its polarization in the absence of screening charges, and quantify the electron-optical phase shift for detecting ferroelectric signals with phase-sensitive techniques in a transmission electron microscope. We provide an example phase shift...

  9. Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch

    International Nuclear Information System (INIS)

    Young, Robert M.; El-Hinnawy, Nabil; Borodulin, Pavel; Wagner, Brian P.; King, Matthew R.; Jones, Evan B.; Howell, Robert S.; Lee, Michael J.

    2014-01-01

    We show the finite element simulation of the melt/quench process in a phase change material (GeTe, germanium telluride) used for a radio frequency switch. The device is thermally activated by an independent NiCrSi (nickel chrome silicon) thin film heating element beneath a dielectric separating it electrically from the phase change layer. A comparison is made between the predicted and experimental minimum power to amorphize (MPA) for various thermal pulse powers and pulse time lengths. By including both the specific heat and latent heat of fusion for GeTe, we find that the MPA and the minimum power to crystallize follow the form of a hyperbola on the power time effect plot. We also find that the simulated time at which the entire center GeTe layer achieves melting accurately matches the MPA curve for pulse durations ranging from 75–1500 ns and pulse powers from 1.6–4 W

  10. Enhanced flexoelectric effect in a non-ferroelectric composite

    Science.gov (United States)

    Li, Yong; Shu, Longlong; Zhou, Yongcun; Guo, Jing; Xiang, Feng; He, Li; Wang, Hong

    2013-09-01

    Direct flexoelectric effect was investigated in a non-ferroelectric composite (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7/Ag (BZN/Ag) where the structure symmetry permits no macro-piezoelectricity. The flexoelectric coefficient of the BZN/Ag composite approaches 0.17 μC/m at room temperature. This value is 3-4 orders of magnitude higher than those of common dielectrics. Our research confirms the existence of flexoelectric effect in insulated non-ferroelectric materials except for ferroelectric relaxors.

  11. Ferroelectric HfZrOx-based MoS2 negative capacitance transistor with ITO capping layers for steep-slope device application

    Science.gov (United States)

    Xu, Jing; Jiang, Shu-Ye; Zhang, Min; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2018-03-01

    A negative capacitance field-effect transistor (NCFET) built with hafnium-based oxide is one of the most promising candidates for low power-density devices due to the extremely steep subthreshold swing (SS) and high on-state current induced by incorporating the ferroelectric material in the gate stack. Here, we demonstrated a two-dimensional (2D) back-gate NCFET with the integration of ferroelectric HfZrOx in the gate stack and few-layer MoS2 as the channel. Instead of using the conventional TiN capping metal to form ferroelectricity in HfZrOx, the NCFET was fabricated on a thickness-optimized Al2O3/indium tin oxide (ITO)/HfZrOx/ITO/SiO2/Si stack, in which the two ITO layers sandwiching the HfZrOx film acted as the control back gate and ferroelectric gate, respectively. The thickness of each layer in the stack was engineered for distinguishable optical identification of the exfoliated 2D flakes on the surface. The NCFET exhibited small off-state current and steep switching behavior with minimum SS as low as 47 mV/dec. Such a steep-slope transistor is compatible with the standard CMOS fabrication process and is very attractive for 2D logic and sensor applications and future energy-efficient nanoelectronic devices with scaling power supply.

  12. Photovoltaics with Ferroelectrics: Current Status and Beyond.

    Science.gov (United States)

    Paillard, Charles; Bai, Xiaofei; Infante, Ingrid C; Guennou, Maël; Geneste, Grégory; Alexe, Marin; Kreisel, Jens; Dkhil, Brahim

    2016-07-01

    Ferroelectrics carry a switchable spontaneous electric polarization. This polarization is usually coupled to strain, making ferroelectrics good piezoelectrics. When coupled to magnetism, they become so-called multiferroic systems, a field that has been widely investigated since 2003. While ferroelectrics are birefringent and non-linear optically transparent materials, the coupling of polarization with optical properties has received, since 2009, renewed attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum absorption and original photovoltaic effects. Consequently, power conversion efficiencies up to 8.1% were recently achieved and values of 19.5% were predicted, making photoferroelectrics promising photovoltaic alternatives. This article aims at providing an up-to-date review on this emerging and rapidly progressing field by highlighting several important issues and parameters, such as the role of domain walls, ways to tune the bandgap, consequences arising from the polarization switchability, and the role of defects and contact electrodes, as well as the downscaling effects. Beyond photovoltaicity, other polarization-related processes are also described, like light-induced deformation (photostriction) or light-assisted chemical reaction (photostriction). It is hoped that this overview will encourage further avenues to be explored and challenged and, as a byproduct, will inspire other research communities in material science, e.g., so-called hybrid halide perovskites. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Novel Low Cost High Efficiency Tunable RF Devices and Antenna Arrays Design based on the Ferroelectric Materials and the CTS Technologies

    Science.gov (United States)

    2011-02-14

    Filed in Foreign Countries? (5d-2) Was the assignment forwarded to the contracting officer? (5e) N Foreign Countries of application ( 5g -2): 5 W. Kim and M...important and challenging topic in satellite communication, radar, navigation, remote sensing, and space exploration. Ferroelectric tunable RF devices...PHASED array antennas have and will continue to play crit-ical roles in the development of wireless and satellite com- munications systems. The advancement

  14. Field-effect transistor memories based on ferroelectric polymers

    Science.gov (United States)

    Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

    2017-11-01

    Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

  15. Lifetime limitations of ohmic, contacting RF MEMS switches with Au, Pt and Ir contact materials due to accumulation of ‘friction polymer’ on the contacts

    International Nuclear Information System (INIS)

    Czaplewski, David A; Nordquist, Christopher D; Dyck, Christopher W; Patrizi, Gary A; Kraus, Garth M; Cowan, William D

    2012-01-01

    We present lifetime limitations and failure analysis of many packaged RF MEMS ohmic contacting switches with Au–Au, Au–Ir, and Au–Pt contact materials operating with 100 µN of contact force per contact in hermetically sealed glass wall packages. All metals were tested using the same switch design in a controlled environment to provide a comparison between the performance of the different materials and their corresponding failure mechanisms. The switch lifetimes of the different contact materials varied from several hundred cycles to 200 million cycles with different mechanisms causing failures for different contact materials. Switches with Au–Au contacts failed due to adhesion when thoroughly cleaned while switches with dissimilar metal contacts (Au–Ir and Au–Pt) operated without adhesion failures but failed due to carbon accumulation on the contacts even in a clean, packaged environment as a result of the catalytic behavior of the contact materials. Switch lifetimes correlated inversely with catalytic behavior of the contact metals. The data suggests the path to increase switch lifetime is to use favorable catalytic materials as contacts, design switches with higher contact forces to break through any residual contamination, and use cleaner, probably smaller, packages. (paper)

  16. Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.

    Science.gov (United States)

    Zalden, Peter; Shu, Michael J; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W; Wong, H-S Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M

    2016-08-05

    Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag_{4}In_{3}Sb_{67}Te_{26}. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales-faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

  17. Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2Transistors.

    Science.gov (United States)

    McGuire, Felicia A; Lin, Yuh-Chen; Price, Katherine; Rayner, G Bruce; Khandelwal, Sourabh; Salahuddin, Sayeef; Franklin, Aaron D

    2017-08-09

    It has been shown that a ferroelectric material integrated into the gate stack of a transistor can create an effective negative capacitance (NC) that allows the device to overcome "Boltzmann tyranny". While this switching below the thermal limit has been observed with Si-based NC field-effect transistors (NC-FETs), the adaptation to 2D materials would enable a device that is scalable in operating voltage as well as size. In this work, we demonstrate sustained sub-60 mV/dec switching, with a minimum subthreshold swing (SS) of 6.07 mV/dec (average of 8.03 mV/dec over 4 orders of magnitude in drain current), by incorporating hafnium zirconium oxide (HfZrO 2 or HZO) ferroelectric into the gate stack of a MoS 2 2D-FET. By first fabricating and characterizing metal-ferroelectric-metal capacitors, the MoS 2 is able to be transferred directly on top and characterized with both a standard and a negative capacitance gate stack. The 2D NC-FET exhibited marked enhancement in low-voltage switching behavior compared to the 2D-FET on the same MoS 2 channel, reducing the SS by 2 orders of magnitude. A maximum internal voltage gain of ∼28× was realized with ∼12 nm thick HZO. Several unique dependencies were observed, including threshold voltage (V th ) shifts in the 2D NC-FET (compared to the 2D-FET) that correlate with source/drain overlap capacitance and changes in HZO (ferroelectric) and HfO 2 (dielectric) thicknesses. Remarkable sub-60 mV/dec switching was obtained from 2D NC-FETs of various sizes and gate stack thicknesses, demonstrating great potential for enabling size- and voltage-scalable transistors.

  18. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    Science.gov (United States)

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  19. Static negative capacitance of a ferroelectric nano-domain nucleus

    Science.gov (United States)

    Sluka, Tomas; Mokry, Pavel; Setter, Nava

    2017-10-01

    Miniaturization of conventional field effect transistors (FETs) approaches the fundamental limits beyond which opening and closing the transistor channel require higher gate voltage swing and cause higher power dissipation and heating. This problem could be eliminated by placing a ferroelectric layer between the FET gate electrode and the channel, which effectively amplifies the gate voltage. The original idea of using a bulk ferroelectric negative capacitor suffers however from irreversible multi-domain ferroelectric switching, which does not allow us to stabilize static negative capacitance, while a recent reversible solution with super-lattices may be difficult to integrate onto FET. Here, we introduce a solution which provides static negative capacitance from a nano-domain nucleus. Phase-field simulations confirm the robustness of this concept, the conveniently achievable small effective negative capacitance and the potentially high compatibility of such a negative nano-capacitor with FET technology.

  20. Controlling the spin-torque efficiency with ferroelectric barriers

    KAUST Repository

    Useinov, A.

    2015-02-11

    Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

  1. High-temperature solution growth and characterization of (1-x)PbTiO3-xBi(Zn2/3Nb1/3)O3 piezo-/ferroelectric single crystals

    Science.gov (United States)

    Paterson, Alisa R.; Zhao, Jinyan; Liu, Zenghui; Wu, Xiaoqing; Ren, Wei; Ye, Zuo-Guang

    2018-03-01

    Complex perovskite PbTiO3-Bi(Me‧Me″)O3 solid solutions represent new materials systems that possess a higher Curie temperature (TC) than the relaxor-PbTiO3 solid solutions, and are useful for potential applications. To this end, novel ferroelectric single crystals of the (1-x)PbTiO3-xBi(Zn2/3Nb1/3)O3 (PT-BZN) solid solution were successfully grown by the high-temperature solution growth (HTSG) method. Powder X-ray diffraction shows that the symmetry of the grown crystals is tetragonal. The dielectric permittivity and optical domain structures were characterized by dielectric measurements and polarized light microscopy, respectively, as a function of temperature, revealing a first-order ferroelectric-paraelectric phase transition at a TC of 436 ± 2 °C. Based on the TC, the average composition of the crystal platelet was estimated to be 0.58PT-0.42BZN. Piezoresponse force microscopy measurements of the phase and amplitude as a function of voltage reveal the complex polar domain structure and demonstrate the ferroelectric switching behaviour of these materials. These results suggest that the PT-BZN single crystals indeed form a new family of high TC piezo-/ferroelectric materials which are potentially useful for the fabrication of electromechanical transducers for high-temperature applications.

  2. Optical switching systems using nanostructures

    DEFF Research Database (Denmark)

    Stubkjær, Kristian

    2004-01-01

    High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems.......High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems....

  3. Insight into the dynamics of low temperature dielectric relaxation of ordinary perovskite ferroelectrics

    OpenAIRE

    Levit Valenzuela, Rafael; Ochoa Guerrero, Diego A.; Martínez García, Julio Cesar; García García, José Eduardo

    2017-01-01

    The temperature dependence of the dielectric response of ordinary ferroelectric materials exhibits a frequency-independent anomalous peak as a manifestation of the ferroelectric to paraelectric phase transition. A second anomaly in the permittivity has been reported in different ferroelectric perovskite-type systems at low temperatures, often at cryogenic temperatures. This anomaly manifests as a frequency-dependent local maximum, which exhibits similar characteristics to that observed in rel...

  4. Tunable optical switching in the near-infrared spectral regime by employing plasmonic nanoantennas containing phase change materials.

    Science.gov (United States)

    Savaliya, Priten B; Thomas, Arun; Dua, Rishi; Dhawan, Anuj

    2017-10-02

    We propose the design of switchable plasmonic nanoantennas (SPNs) that can be employed for optical switching in the near-infrared regime. The proposed SPNs consist of nanoantenna structures made up of a plasmonic metal (gold) such that these nanoantennas are filled with a switchable material (vanadium dioxide). We compare the results of these SPNs with inverted SPN structures that consist of gold nanoantenna structures surrounded by a layer of vanadium dioxide (VO 2 ) on their outer surface. These nanoantennas demonstrate switching of electric-field intensity enhancement (EFIE) between two states (On and Off states), which can be induced thermally, optically or electrically. The On and Off states of the nanoantennas correspond to the metallic and semiconductor states, respectively of the VO 2 film inside or around the nanoantennas, as the VO 2 film exhibits phase transition from its semiconductor state to the metallic state upon application of thermal, optical, or electrical energy. We employ finite-difference time-domain (FDTD) simulations to demonstrate switching in the EFIE for four different SPN geometries - nanorod-dipole, bowtie, planar trapezoidal toothed log-periodic, and rod-disk - and compare their near-field distributions for the On and Off states of the SPNs. We also demonstrate that the resonance wavelength of the EFIE spectra gets substantially modified when these SPNs switch between the two states.

  5. Class of diatomic ferroelectrics with multifunctional properties: IV-VI compounds in the distorted NiAs-type structure

    Science.gov (United States)

    Zhang, Hu; Deng, Bei; Wang, Wei-Chao; Shi, Xing-Qiang

    2017-12-01

    Ferroelectrics have attracted a great deal of attention, but diatomic ferroelectrics are less common. Here we establish a class of diatomic ferroelectrics in the distorted NiAs-type structure based on state-of-the-art first-principles calculations. These compounds, with giant Rashba effect, possess rich phases, ranging from ferroelectric semiconductors to ferroelectric semimetals. Topological surface states and type-II bulk Dirac fermions are found in the undistorted phases. This class of multifunctional materials has potential applications in spin-orbitronics.

  6. Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    T. Young

    2018-02-01

    Full Text Available We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ∼50 nm thick grown on (001 LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T′ phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T′ phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T′-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.

  7. Molecular ferroelectrics: where electronics meet biology.

    Science.gov (United States)

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-12-28

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with the ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by an overview of the fundamentals of ferroelectricity. The latest developments in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also described.

  8. Ferroelectric-gate field effect transistor memories device physics and applications

    CERN Document Server

    Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

    2016-01-01

    This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

  9. Magnetic switching

    International Nuclear Information System (INIS)

    Kirbie, H.C.

    1989-01-01

    Magnetic switching is a pulse compression technique that uses a saturable inductor (reactor) to pass pulses of energy between two capacitors. A high degree of pulse compression can be achieved in a network when several of these simple, magnetically switched circuits are connected in series. Individual inductors are designed to saturate in cascade as a pulse moves along the network. The technique is particularly useful when a single-pulse network must be very reliable or when a multi-pulse network must operate at a high pulse repetition frequency (PRF). Today, magnetic switches trigger spark gaps, sharpen the risetimes of high energy pulses, power large lasers, and drive high PRF linear induction accelerators. This paper will describe the technique of magnetic pulse compression using simple networks and design equations. A brief review of modern magnetic materials and of their role in magnetic switch design will be presented. 12 refs., 8 figs

  10. Upper bounds for flexoelectric coefficients in ferroelectrics

    Science.gov (United States)

    Yudin, P. V.; Ahluwalia, R.; Tagantsev, A. K.

    2014-02-01

    Flexoelectric effect is the response of electric polarization to the mechanical strain gradient. At the nano-scale, where large strain gradients are expected, the flexoelectric effect becomes appreciable and may substitute piezoelectric effect in centrosymmetric materials. These features make flexoelectricity of growing interest during the last decade. At the same time, the available theoretical and experimental results are rather contradictory. In particular, experimentally measured flexoelectric coefficients in some ferroelectric materials largely exceed theoretically predicted values. Here, we determine the upper limits for the magnitude of the static bulk contribution to the flexoelectric effect in ferroelectrics, the contribution which was customarily considered as the dominating one. The magnitude of the upper bounds obtained suggests that the anomalously high flexoelectric coupling documented for perovskite ceramics can hardly be attributed to a manifestation of the static bulk effect.

  11. Fracture mechanics of piezoelectric and ferroelectric solids

    CERN Document Server

    Fang, Daining

    2013-01-01

    Fracture Mechanics of Piezoelectric and Ferroelectric Solids presents a systematic and comprehensive coverage of the fracture mechanics of piezoelectric/ferroelectric materials, which includes the theoretical analysis, numerical computations and experimental observations. The main emphasis is placed on the mechanics description of various crack problems such static, dynamic and interface fractures as well as the physical explanations for the mechanism of electrically induced fracture. The book is intended for postgraduate students, researchers and engineers in the fields of solid mechanics, applied physics, material science and mechanical engineering. Dr. Daining Fang is a professor at the School of Aerospace, Tsinghua University, China; Dr. Jinxi Liu is a professor at the Department of Engineering Mechanics, Shijiazhuang Railway Institute, China.

  12. Critical properties of a ferroelectric superlattice described by a transverse spin-1/2 Ising model

    International Nuclear Information System (INIS)

    Tabyaoui, A; Saber, M; Baerner, K; Ainane, A

    2007-01-01

    The phase transition properties of a ferroelectric superlattice with two alternating layers A and B described by a transverse spin-1/2 Ising model have been investigated using the effective field theory within a probability distribution technique that accounts for the self spin correlation functions. The Curie temperature T c , polarization and susceptibility have been obtained. The effects of the transverse field and the ferroelectric and antiferroelectric interfacial coupling strength between two ferroelectric materials are discussed. They relate to the physical properties of antiferroelectric/ferroelectric superlattices

  13. The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals

    Energy Technology Data Exchange (ETDEWEB)

    Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R.; Chen, Long-Qing (Penn); (Xian Jiaotong); (CIW); (Simon); (TRS Techn); (Wollongong)

    2016-12-19

    The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50–80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

  14. The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals.

    Science.gov (United States)

    Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R; Chen, Long-Qing

    2016-12-19

    The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50-80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

  15. Electronic ferroelectricity in carbon-based systems: from reality of organic conductors to promises of polymers and graphene nano-ribbons

    International Nuclear Information System (INIS)

    Kirova, Natasha; Brazovskii, Serguei

    2014-01-01

    Ferroelectricity is a rising demand in fundamental and applied solid state physics. Ferroelectrics are used in microelectronics as active gate materials, in capacitors, electro-optical-acoustic modulators, etc. There is a particular demand for plastic ferroelectrics, e.g. as a sensor for acoustic imaging in medicine and beyond, in shapeable capacitors, etc. Microscopic mechanisms of ferroelectric polarization in traditional materials are typically ionic. In this talk we discuss the electronic ferroelectrics – carbon-based materials: organic crystals, conducting polymers and graphene nano-ribbons. The motion of walls, separating domains with opposite electric polarisation, can be influenced and manipulated by terahertz and infra-red range optics

  16. Ferroelectricity the fundamentals collection

    CERN Document Server

    Jimenez, Basilio

    2008-01-01

    This indispensable collection of seminal papers on ferroelectricity provides an overview over almost a hundred years of basic and applied research. Containing historic contributions from renowned authors, this book presents developments in an area of science that is still rapidly growing. Although primarily aimed at scientists and academics involved in research, this will also be of use to students as well as newcomers to the field.

  17. Charge injection driven switching between ferromagnetism and antiferromagnetism in transitional metal-doped MoS2 materials

    Science.gov (United States)

    Song, Changsheng; Pan, Jiaqi; Wu, Xiaoping; Cui, Can; Li, Chaorong; Wang, Jiqing

    2017-11-01

    Using first-principles calculations, we report on charge injection induced switching between ferromagnetic (FM) and antiferromagnetic (AFM) in a 2H-MoS2 monolayer. MoS2 monolayers doped with different transition metals (TM)—Fe and Mn—initially demonstrate FM and AFM magnetic ground state, respectively. Once the injected charge approaches 1.0 e/unit, the systems respectively tend to AFM and FM states, due to the modulation effect of the exchange splitting of spins via injected charge. The interesting switch between FM and AFM can be explained by the competition between FM double-exchange and AFM super-exchange interaction. In contrast, the MoS2 /WS2 heterojunction, because of the direct bonding between dopant TM atoms, remains in the AFM state even under charge injection. These findings point toward the possible development of spintronic switch devices using charge injection in TM doped MoS2 materials, which could be pivotal to information storage and spintronic applications.

  18. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Xu, Jin; Li, Qing; Guan, Yan; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schröder, Uwe

    2013-01-01

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO 2 film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up

  19. Flexo- and piezo-electric polarization of smectic layers in ferroelectric and antiferroelectric liquid crystals

    Science.gov (United States)

    Kuczyński, W.; Hoffmann, J.; Dardas, D.; Nowicka, K.; Bielejewska, N.

    2015-11-01

    In this paper, we report on how flexoelectric and piezoelectric polarization components can be determined by a method based on simultaneous studies of dielectric and electrooptic properties of the chiral smectic liquid crystal in the regime of weak electric fields. As a rule, the measurements of spontaneous polarization are performed using switching experiments. The polarization measured in this way is not complete—it contains the piezoelectric component only. However, the knowledge of the entire local polarization of a single smectic layer is of great importance—it is necessary for correct determination of some material parameters, for instance elastic constants. Our experiments performed in a helical smectic mixture demonstrated that flexoelectric contribution to the local spontaneous polarization is significant in both ferroelectric and antiferroelectric phases. In the antiferroelectric phase, the flexoelectric polarization is less due to higher helical pitch.

  20. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Varo, Pilar [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Bertoluzzi, Luca [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Bisquert, Juan, E-mail: bisquert@uji.es [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Alexe, Marin [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Coll, Mariona [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia (Spain); Huang, Jinsong [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States); Jimenez-Tejada, Juan Antonio [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Kirchartz, Thomas [IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Faculty of Engineering and CENIDE, University of Duisburg–Essen, Carl-Benz-Str. 199, 47057 Duisburg (Germany); Nechache, Riad; Rosei, Federico [INRS—Center Énergie, Matériaux et Télécommunications, Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2 (Canada); Yuan, Yongbo [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States)

    2016-10-07

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  1. Experimental evidence of enhanced ferroelectricity in Ca doped BiFeO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Costa, L.V.; Deus, R.C. [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil); Foschini, C.R.; Longo, E. [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Bauru, Dept. de Eng. Mecânica, Av. Eng. Luiz Edmundo C. Coube 14-01, 17033-360 Bauru, SP (Brazil); Cilense, M. [Universidade Estadual Paulista, UNESP, Instituto de Química – Laboratório Interdisciplinar em Cerâmica (LIEC), Rua Professor Francisco Degni s/n, 14800-90 Araraquara, SP (Brazil); Simões, A.Z., E-mail: alezipo@yahoo.com [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil)

    2014-04-01

    Calcium (Ca)-doped bismuth ferrite (BiFeO{sub 3}) thin films prepared by using the polymeric precursor method (PPM) were characterized by X-ray diffraction (XRD), field emission gun scanning electron microscopy (FEG-SEM), transmission electron microscopy (TEM), polarization and piezoelectric measurements. Structural studies by XRD and TEM reveal the co-existence of distorted rhombohedral and tetragonal phases in the highest doped BiFeO{sub 3} where enhanced ferroelectric and piezoelectric properties are produced by internal strain. Resistive switching is observed in BFO and Ca-doped BFO which are affected by the barrier contact and work function of multiferroic materials and Pt electrodes. A high coercive field in the hysteresis loop is observed for the BiFeO{sub 3} film. Piezoelectric properties are improved in the highest Ca-doped sample due to changes in the crystal structure of BFO for a primitive cubic perovskite lattice with four-fold symmetry and a large tetragonal distortion within the crystal domain. This observation introduces magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom which are already present in the multiferroic BiFeO{sub 3}. - Highlights: • Ca doped BiFeO{sub 3} thin films were obtained by the polymeric precursor method. • Co-existence of distorted rhombohedral and tetragonal phases are evident. • Enhanced ferroelectric and piezoelectric properties are produced by the internal strain in the Ca doped BiFeO{sub 3} film.

  2. Structure and Dynamics of Domains in Ferroelectric Nanostructures. In-situ TEM Studies

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Xiaoqing [Univ. of Michigan, Ann Arbor, MI (United States)

    2015-06-30

    The goal of this project was to explore the structure and dynamic behaviors of ferroelectric domains in ferroelectric thin films and nanostructures by advanced transmission electron microscopy (TEM) techniques in close collaboration with phase field modeling. The experimental techniques used include aberration-corrected sub-Å resolution TEM and in-situ TEM using a novel scanning tunneling microscopy (STM) - TEM holder that allows the direct observation of nucleation and dynamic evolution of ferroelectric domains under applied electric field. Specifically, this project was aimed to (1) to study the roles of static electrical boundary conditions and electrical charge in controlling the equilibrium domain structures of BiFeO3 thin films with controlled substrate constraints, (2) to explore the fundamental mechanisms of ferroelectric domain nucleation, growth, and switching under an applied electric field in both uniform thin films and nanostructures, and to understand the roles of crystal defects such as dislocations and interfaces in these processes, (3) to understand the physics of ferroelectric domain walls and the influence of defects on the electrical switching of ferroelectric domains.

  3. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  4. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

    Science.gov (United States)

    Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

    2017-07-01

    In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

  5. A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

    Directory of Open Access Journals (Sweden)

    S. Riedel

    2016-09-01

    Full Text Available Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.

  6. Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

    Science.gov (United States)

    Hu, Wei; Qin, Ni; Wu, Guangheng; Lin, Yanting; Li, Shuwei; Bao, Dinghua

    2012-09-12

    The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics of a Pt/NiFe(2)O(4)/Pt structure, such as low operating voltage, high device yield, long retention time (up to 10(5) s), and good endurance (up to 2.2 × 10(4) cycles). The dominant conduction mechanisms are Ohmic conduction in the low-resistance state and in the lower-voltage region of the high-resistance state and Schottky emission in the higher-voltage region of the high-resistance state. On the basis of measurements of the temperature dependence of the resistances and magnetic properties in different resistance states, we explain the physical mechanism of resistive switching of Pt/NiFe(2)O(4)/Pt devices using the model of formation and rupture of conducting filaments by considering the thermal effect of oxygen vacancies and changes in the valences of cations due to the redox effect.

  7. Ferroelectric thin films for future thermonuclear reactor diagnostic applications

    International Nuclear Information System (INIS)

    Zauls, V.; Kundzins, K.; Aulika, I.; Kundzins, M.; Stenbergs, A.

    2006-01-01

    Full text: General overview of active material selection requirements for use in bolometric radiation diagnostics systems of future nuclear fusion reactors in comparison with our results of ferroelectric material based elements will be presented. Under modulated thermal irradiation bolometric sensitivity with the range of few mili-Kelvin temperature resolution at 0,2 s time response constant has been demonstrated by thin ferroelectric film capacitive sensor model on thick substrate. Sample measurement system has been developed to be compatible with Wheatstone bridge type bolometric heads measurement concept of ASDEX or ToreSupra reactor sites for future tests

  8. Ferroelectric based catalysis: Switchable surface chemistry

    Science.gov (United States)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab

    2015-03-01

    We describe a new class of catalysts that uses an epitaxial monolayer of a transition metal oxide on a ferroelectric substrate. The ferroelectric polarization switches the surface chemistry between strongly adsorptive and strongly desorptive regimes, circumventing difficulties encountered on non-switchable catalytic surfaces where the Sabatier principle dictates a moderate surface-molecule interaction strength. This method is general and can, in principle, be applied to many reactions, and for each case the choice of the transition oxide monolayer can be optimized. Here, as a specific example, we show how simultaneous NOx direct decomposition (into N2 and O2) and CO oxidation can be achieved efficiently on CrO2 terminated PbTiO3, while circumventing oxygen (and sulfur) poisoning issues. One should note that NOx direct decomposition has been an open challenge in automotive emission control industry. Our method can expand the range of catalytically active elements to those which are not conventionally considered for catalysis and which are more economical, e.g., Cr (for NOx direct decomposition and CO oxidation) instead of canonical precious metal catalysts. Primary support from Toyota Motor Engineering and Manufacturing, North America, Inc.

  9. Tunable Metallic Conductivity in Ferroelectric Nanodomains

    Science.gov (United States)

    Maksymovych, P.; Morozovska, A. N.; Yu, P.; Eliseev, E. A.; Chu, Y.-H.; Ramesh, R.; Baddorf, A. P.; Kalinin, S. V.

    2012-02-01

    Domain wall conductivity in ferroelectric and multiferroic oxides is an essential example of new electronic properties created by topological defects. So far electron transport through domain walls in canonical BiFeO3 and PbZr0.2Ti0.8O3 (PZT) ferroelectrics has been dominated by thermally activated hopping, concealing the enabling physics and limiting potential applications. We will present a pioneering observation of metallic conductivity in nanoscale ferroelectric domains in PZT, that unambiguously identifies a new conduction channel created through the bulk of the oxide film [1]. From a corollary theoretical analysis, we conclude that metallic conductance is enabled by the interplay of charging and flexoelectric effects at tilted and curved walls of the nanodomain. Furthermore, both type and density of carriers can be tuned by manipulation of the order parameter. Thus, a new family of electronic properties may be found in multiferroic and topologically nanostructured complex oxides. [1] Maksymovych et al, Nano Lett. in review (2011). Research conducted at the Center for Nanophase Materials Sciences, sponsored by BES, U. S. DOE.

  10. Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

    Science.gov (United States)

    Haridasan, Vrinda

    Military, space, and consumer-based communication markets alike are moving towards multi-functional, multi-mode, and portable transceiver units. Ferroelectric-based tunable filter designs in RF front-ends are a relatively new area of research that provides a potential solution to support wideband and compact transceiver units. This work presents design methodologies developed to optimize a tunable filter design for system-level integration, and to improve the performance of a ferroelectric-based tunable bandpass filter. An investigative approach to find the origins of high insertion loss exhibited by these filters is also undertaken. A system-aware design guideline and figure of merit for ferroelectric-based tunable band- pass filters is developed. The guideline does not constrain the filter bandwidth as long as it falls within the range of the analog bandwidth of a system's analog to digital converter. A figure of merit (FOM) that optimizes filter design for a specific application is presented. It considers the worst-case filter performance parameters and a tuning sensitivity term that captures the relation between frequency tunability and the underlying material tunability. A non-tunable parasitic fringe capacitance associated with ferroelectric-based planar capacitors is confirmed by simulated and measured results. The fringe capacitance is an appreciable proportion of the tunable capacitance at frequencies of X-band and higher. As ferroelectric-based tunable capac- itors form tunable resonators in the filter design, a proportionally higher fringe capacitance reduces the capacitance tunability which in turn reduces the frequency tunability of the filter. Methods to reduce the fringe capacitance can thus increase frequency tunability or indirectly reduce the filter insertion-loss by trading off the increased tunability achieved to lower loss. A new two-pole tunable filter topology with high frequency tunability (> 30%), steep filter skirts, wide stopband

  11. Ferroelectric Nanoparticles in Liquid Crystals: Recent Progress and Current Challenges

    Science.gov (United States)

    Glushchenko, Anatoliy

    2017-01-01

    The dispersion of ferroelectric nanomaterials in liquid crystals has recently emerged as a promising way for the design of advanced and tunable electro-optical materials. The goal of this paper is a broad overview of the current technology, basic physical properties, and applications of ferroelectric nanoparticle/liquid crystal colloids. By compiling a great variety of experimental data and discussing it in the framework of existing theoretical models, both scientific and technological challenges of this rapidly developing field of liquid crystal nanoscience are identified. They can be broadly categorized into the following groups: (i) the control of the size, shape, and the ferroelectricity of nanoparticles; (ii) the production of a stable and aggregate-free dispersion of relatively small (~10 nm) ferroelectric nanoparticles in liquid crystals; (iii) the selection of liquid crystal materials the most suitable for the dispersion of nanoparticles; (iv) the choice of appropriate experimental procedures and control measurements to characterize liquid crystals doped with ferroelectric nanoparticles; and (v) the development and/or modification of theoretical and computational models to account for the complexity of the system under study. Possible ways to overcome the identified challenges along with future research directions are also discussed. PMID:29104276

  12. Hierarchical ferroelectric and ferrotoroidic polarizations coexistent in nano-metamaterials.

    Science.gov (United States)

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jie; Kitamura, Takayuki

    2015-10-01

    Tailoring materials to obtain unique, or significantly enhanced material properties through rationally designed structures rather than chemical constituents is principle of metamaterial concept, which leads to the realization of remarkable optical and mechanical properties. Inspired by the recent progress in electromagnetic and mechanical metamaterials, here we introduce the concept of ferroelectric nano-metamaterials, and demonstrate through an experiment in silico with hierarchical nanostructures of ferroelectrics using sophisticated real-space phase-field techniques. This new concept enables variety of unusual and complex yet controllable domain patterns to be achieved, where the coexistence between hierarchical ferroelectric and ferrotoroidic polarizations establishes a new benchmark for exploration of complexity in spontaneous polarization ordering. The concept opens a novel route to effectively tailor domain configurations through the control of internal structure, facilitating access to stabilization and control of complex domain patterns that provide high potential for novel functionalities. A key design parameter to achieve such complex patterns is explored based on the parity of junctions that connect constituent nanostructures. We further highlight the variety of additional functionalities that are potentially obtained from ferroelectric nano-metamaterials, and provide promising perspectives for novel multifunctional devices. This study proposes an entirely new discipline of ferroelectric nano-metamaterials, further driving advances in metamaterials research.

  13. Ferroelectric Nanoparticles in Liquid Crystals: Recent Progress and Current Challenges.

    Science.gov (United States)

    Garbovskiy, Yuriy; Glushchenko, Anatoliy

    2017-11-01

    The dispersion of ferroelectric nanomaterials in liquid crystals has recently emerged as a promising way for the design of advanced and tunable electro-optical materials. The goal of this paper is a broad overview of the current technology, basic physical properties, and applications of ferroelectric nanoparticle/liquid crystal colloids. By compiling a great variety of experimental data and discussing it in the framework of existing theoretical models, both scientific and technological challenges of this rapidly developing field of liquid crystal nanoscience are identified. They can be broadly categorized into the following groups: (i) the control of the size, shape, and the ferroelectricity of nanoparticles; (ii) the production of a stable and aggregate-free dispersion of relatively small (~10 nm) ferroelectric nanoparticles in liquid crystals; (iii) the selection of liquid crystal materials the most suitable for the dispersion of nanoparticles; (iv) the choice of appropriate experimental procedures and control measurements to characterize liquid crystals doped with ferroelectric nanoparticles; and (v) the development and/or modification of theoretical and computational models to account for the complexity of the system under study. Possible ways to overcome the identified challenges along with future research directions are also discussed.

  14. Hierarchical ferroelectric and ferrotoroidic polarizations coexistent in nano-metamaterials

    Science.gov (United States)

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jie; Kitamura, Takayuki

    2015-10-01

    Tailoring materials to obtain unique, or significantly enhanced material properties through rationally designed structures rather than chemical constituents is principle of metamaterial concept, which leads to the realization of remarkable optical and mechanical properties. Inspired by the recent progress in electromagnetic and mechanical metamaterials, here we introduce the concept of ferroelectric nano-metamaterials, and demonstrate through an experiment in silico with hierarchical nanostructures of ferroelectrics using sophisticated real-space phase-field techniques. This new concept enables variety of unusual and complex yet controllable domain patterns to be achieved, where the coexistence between hierarchical ferroelectric and ferrotoroidic polarizations establishes a new benchmark for exploration of complexity in spontaneous polarization ordering. The concept opens a novel route to effectively tailor domain configurations through the control of internal structure, facilitating access to stabilization and control of complex domain patterns that provide high potential for novel functionalities. A key design parameter to achieve such complex patterns is explored based on the parity of junctions that connect constituent nanostructures. We further highlight the variety of additional functionalities that are potentially obtained from ferroelectric nano-metamaterials, and provide promising perspectives for novel multifunctional devices. This study proposes an entirely new discipline of ferroelectric nano-metamaterials, further driving advances in metamaterials research.

  15. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    Science.gov (United States)

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-01-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

  16. Effects of electrode material and configuration on the characteristics of planar resistive switching devices

    KAUST Repository

    Peng, H.Y.

    2013-11-13

    We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories. 2013 Author(s).

  17. Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture.

    Science.gov (United States)

    Maikap, Siddheswar; Panja, Rajeswar; Jana, Debanjan

    2014-01-01

    A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under external bias in an Al/Cu/Al2O3/TiN structure is simple and low cost. The Cu pillar is formed in the Al2O3 film under a small operation voltage of 70 mA is obtained. More than 100 devices have shown tight distribution of the Cu pillars in Al2O3 film for high current compliance (CC) of 70 mA. Robust read pulse endurances of >10(6) cycles are observed with read voltages of -1, 1, and 4 V. However, read endurance is failed with read voltages of -1.5, -2, and -4 V. By decreasing negative read voltage, the read endurance is getting worst, which is owing to ruptured Cu pillar. Surface roughness and TiO x N y on TiN bottom electrode are observed by atomic force microscope and transmission electron microscope, respectively. The Al/Cu/Al2O3/TiN memory device shows good bipolar resistive switching behavior at a CC of 500 μA under small operating voltage of ±1 V and good data retention characteristics of >10(3) s with acceptable resistance ratio of >10 is also obtained. This suggests that high-current operation will help to form Cu pillar and lower-current operation will have bipolar resistive switching memory. Therefore, this new Cu/Al2O3/TiN structure will be benefited for 3D architecture in the future.

  18. Fork gratings based on ferroelectric liquid crystals.

    Science.gov (United States)

    Ma, Y; Wei, B Y; Shi, L Y; Srivastava, A K; Chigrinov, V G; Kwok, H-S; Hu, W; Lu, Y Q

    2016-03-21

    In this article, we disclose a fork grating (FG) based on the photo-aligned ferroelectric liquid crystal (FLC). The Digital Micro-mirror Device based system is used as a dynamic photomask to generated different holograms. Because of controlled anchoring energy, the photo alignment process offers optimal conditions for the multi-domain FLC alignment. Two different electro-optical modes namely DIFF/TRANS and DIFF/OFF switchable modes have been proposed where the diffraction can be switched either to no diffraction or to a completely black state, respectively. The FLC FG shows high diffraction efficiency and fast response time of 50µs that is relatively faster than existing technologies. Thus, the FLC FG may pave a good foundation toward optical vertices generation and manipulation that could find applications in a variety of devices.

  19. Transport and Fatigue Properties of Ferroelectric Polymer P(VDF-TrFE) For Nonvolatile Memory Applications

    KAUST Repository

    Hanna, Amir

    2012-06-01

    Organic ferroelectrics polymers have recently received much interest for use in nonvolatile memory devices. The ferroelectric copolymer poly(vinylidene fluoride- trifluoroethylene) , P(VDF-TrFE), is a promising candidate due to its relatively high remnant polarization, low coercive field, fast switching times, easy processability, and low Curie transition. However, no detailed study of charge injection and current transport properties in P(VDF-TrFE) have been reported in the literature yet. Charge injection and transport are believed to affect various properties of ferroelectric films such as remnant polarization values and polarization fatigue behavior.. Thus, this thesis aims to study charge injection in P(VDF-TrFE) and its transport properties as a function of electrode material. Injection was studied for Al, Ag, Au and Pt electrodes. Higher work function metals such as Pt have shown less leakage current compared to lower work function metals such as Al for more than an order of magnitude. That implied n-type conduction behavior for P(VDF-TrFE), as well as electrons being the dominant injected carrier type. Charge transport was also studied as a function of temperature, and two major transport regimes were identified: 1) Thermionic emission over a Schottky barrier for low fields (E < 25 MV/m). 2) Space-Charge-Limited regime at higher fields (25 < E <120 MV/m). We have also studied the optical imprint phenomenon, the polarization fatigue resulting from a combination of broad band optical illumination and DC bias near the switching field. A setup was designed for the experiment, and validated by reproducing the reported effect in polycrystalline Pb(Zr,Ti)O3 , PZT, film. On the other hand, P(VDF-TrFE) film showed no polarization fatigue as a result of optical imprint test, which could be attributed to the large band gap of the material, and the low intensity of the UV portion of the arc lamp white light used for the experiment. Results suggest using high work

  20. Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level

    Science.gov (United States)

    Vasudevan, R. K.; Bogle, K. A.; Kumar, A.; Jesse, S.; Magaraggia, R.; Stamps, R.; Ogale, S. B.; Potdar, H. S.; Nagarajan, V.

    2011-12-01

    Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1-xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of ˜1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

  1. Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level

    Energy Technology Data Exchange (ETDEWEB)

    Vasudevan, Rama K [ORNL; Bogle, K A [University of New South Wales, Sydney, Australia; Kumar, Amit [ORNL; Jesse, Stephen [ORNL; Magaraggia, R [University of Glasgow; Stamps, R [University of Glasgow; Ogale, S [National Chemical Laboratory, India; Potdar, H S [National Chemical Laboratory, India

    2011-01-01

    Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of 1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

  2. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  3. Ferroelectric properties of lead-free polycrystalline CaBi{sub 2}Nb{sub 2}O{sub 9} thin films on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Yoonho, E-mail: yahn@khu.ac.kr; Son, Jong Yeog, E-mail: jyson@khu.ac.kr [Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin 446-701 (Korea, Republic of); Jang, Joonkyung [Department of Nanoenergy Engineering, Pusan National University, Busan 609-735 (Korea, Republic of)

    2016-03-15

    CaBi{sub 2}Nb{sub 2}O{sub 9} (CBNO) thin film, a lead-free ferroelectric material, was prepared on a Pt/Ta/glass substrate via pulsed laser deposition. The Ta film was deposited on the glass substrate for a buffer layer. A (115) preferred orientation of the polycrystalline CBNO thin film was verified via X-ray diffraction measurements. The CBNO thin film on a glass substrate exhibited good ferroelectric properties with a remnant polarization of 4.8 μC/cm{sup 2} (2P{sub r} ∼9.6 μC/cm{sup 2}), although it had lower polarization than the epitaxially c-oriented CBNO thin film reported previously. A mosaic-like ferroelectric domain structure was observed via piezoresponse force microscopy. Significantly, the polycrystalline CBNO thin film showed much faster switching behavior within about 100 ns than that of the epitaxially c-oriented CBNO thin film.

  4. Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor

    Science.gov (United States)

    Chang, Sou-Chi; Avci, Uygar E.; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.

    2018-01-01

    Transient negative differential capacitance, the dynamic reversal of transient capacitance in an electrical circuit, is of highly technological and scientific interest since it probes the foundation of ferroelectricity. We study a resistor-ferroelectric capacitor (R -FEC) network through a series of coupled equations based on Kirchhoff's law, electrostatics, and Landau theory. We show that transient negative capacitance (NC) in a R -FEC circuit originates from the mismatch in switching rate between the free charge on the metal plate and the bound charge in a ferroelectric (FE) capacitor during the polarization switching. This transient free charge-polarization mismatch is driven by the negative curvature of the FE free-energy landscape, and it is also analytically shown that a free-energy profile with a negative curvature is the only physical system that can describe transient NC in a R -FEC circuit. Furthermore, transient NC induced by the free charge-polarization mismatch is justified by its dependence on both external resistance and the intrinsic FE viscosity coefficient. The depolarization effect on FE capacitors emphasizes the importance of negative curvature to transient NC and also implies that transient and steady-state NC cannot be observed in a FE capacitor simultaneously. Finally, using the transient NC measurements, a procedure to experimentally determine the viscosity coefficient is presented to provide more insight into the relation between transient NC and the FE free-energy profile.

  5. Novel electronic ferroelectricity in an organic charge-order insulator investigated with terahertz-pump optical-probe spectroscopy

    Science.gov (United States)

    Yamakawa, H.; Miyamoto, T.; Morimoto, T.; Yada, H.; Kinoshita, Y.; Sotome, M.; Kida, N.; Yamamoto, K.; Iwano, K.; Matsumoto, Y.; Watanabe, S.; Shimoi, Y.; Suda, M.; Yamamoto, H. M.; Mori, H.; Okamoto, H.

    2016-01-01

    In electronic-type ferroelectrics, where dipole moments produced by the variations of electron configurations are aligned, the polarization is expected to be rapidly controlled by electric fields. Such a feature can be used for high-speed electric-switching and memory devices. Electronic-type ferroelectrics include charge degrees of freedom, so that they are sometimes conductive, complicating dielectric measurements. This makes difficult the exploration of electronic-type ferroelectrics and the understanding of their ferroelectric nature. Here, we show unambiguous evidence for electronic ferroelectricity in the charge-order (CO) phase of a prototypical ET-based molecular compound, α-(ET)2I3 (ET:bis(ethylenedithio)tetrathiafulvalene), using a terahertz pulse as an external electric field. Terahertz-pump second-harmonic-generation(SHG)-probe and optical-reflectivity-probe spectroscopy reveal that the ferroelectric polarization originates from intermolecular charge transfers and is inclined 27° from the horizontal CO stripe. These features are qualitatively reproduced by the density-functional-theory calculation. After sub-picosecond polarization modulation by terahertz fields, prominent oscillations appear in the reflectivity but not in the SHG-probe results, suggesting that the CO is coupled with molecular displacements, while the ferroelectricity is electronic in nature. The results presented here demonstrate that terahertz-pump optical-probe spectroscopy is a powerful tool not only for rapidly controlling polarizations, but also for clarifying the mechanisms of ferroelectricity. PMID:26864779

  6. Piezoelectricity and Ferroelectricity in Amino Acid Glycine =

    Science.gov (United States)

    Seyedhosseini, Ensieh

    Bioorganic ferroelectrics and piezoelectrics are becoming increasingly important in view of their intrinsic compatibility with biological environment and biofunctionality combined with strong piezoelectric effect and switchable polarization at room temperature. Here we study piezoelectricity and ferroelectricity in the smallest amino acid glycine, representing a broad class of non-centrosymmetric amino acids. Glycine is one of the basic and important elements in biology, as it serves as a building block for proteins. Three polymorphic forms with different physical properties are possible in glycine (alpha, beta and gamma), Of special interest for various applications are non-centrosymmetric polymorphs: beta-glycine and gamma-glycine. The most useful beta-polymorph being ferroelectric took much less attention than the other due to its instability under ambient conditions. In this work, we could grow stable microcrystals of beta-glycine by the evaporation of aqueous solution on a (111)Pt/Ti/SiO2/Si substrate as a template. The effects of the solution concentration and Pt-assisted nucleation on the crystal growth and phase evolution were characterized by X-ray diffraction analysis and Raman spectroscopy. In addition, spin-coating technique was used for the fabrication of highly aligned nano-islands of beta-glycine with regular orientation of the crystallographic axes relative the underlying substrate (Pt). Further we study both as-grown and tip-induced domain structures and polarization switching in the beta-glycine molecular systems by Piezoresponse Force Microscopy (PFM) and compare the results with molecular modeling and computer simulations. We show that beta-glycine is indeed a room-temperature ferroelectric and polarization can be switched by applying a bias to non-polar cuts via a conducting tip of atomic force microscope (AFM). Dynamics of these in-plane domains is studied as a function of applied voltage and pulse duration. The domain shape is dictated by

  7. Stress effects in ferroelectric perovskite thin-films

    Science.gov (United States)

    Zednik, Ricardo Johann

    The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

  8. Simultaneous resonant x-ray diffraction measurement of polarization inversion and lattice strain in polycrystalline ferroelectrics

    DEFF Research Database (Denmark)

    Gorfman, S.; Simons, Hugh; Iamsasri, T.

    2016-01-01

    strain and, for the first time, polarization reversal during in-situ electrical perturbation. This technique is demonstrated for BaTiO3-BiZn0.5Ti0.5O3 (BT-BZT) polycrystalline ferroelectrics, a prototypical lead-free piezoelectric with an ambiguous switching mechanism. This combines the benefits...

  9. Organic non-volatile memories from ferroelectric phase-separated blends

    NARCIS (Netherlands)

    Asadi, Kamal; De Leeuw, Dago M.; De Boer, Bert; Blom, Paul W. M.

    New non-volatile memories are being investigated to keep up with the organic-electronics road map(1). Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two binary levels(2). However, in

  10. Ferroelectric capacitor with reduced imprint

    Science.gov (United States)

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  11. Nano-scale ferroelectric memories

    International Nuclear Information System (INIS)

    Scott, J.F.

    1998-01-01

    Since 1986 there has been a minor renaissance in the study of ferroelectrics. Studied for a century in the form of single-crystals or bulk ceramics, ferroelectrics are now fully integrated in thin-film (100 nm or less) form in both Si and GaAs chips. Four embodiments have reached large-volume commercial production. A brief review of this field of device physics is given, emphasizing memory applications. (author)

  12. Learning through ferroelectric domain dynamics in solid-state synapses

    Science.gov (United States)

    Boyn, Sören; Grollier, Julie; Lecerf, Gwendal; Xu, Bin; Locatelli, Nicolas; Fusil, Stéphane; Girod, Stéphanie; Carrétéro, Cécile; Garcia, Karin; Xavier, Stéphane; Tomas, Jean; Bellaiche, Laurent; Bibes, Manuel; Barthélémy, Agnès; Saïghi, Sylvain; Garcia, Vincent

    2017-04-01

    In the brain, learning is achieved through the ability of synapses to reconfigure the strength by which they connect neurons (synaptic plasticity). In promising solid-state synapses called memristors, conductance can be finely tuned by voltage pulses and set to evolve according to a biological learning rule called spike-timing-dependent plasticity (STDP). Future neuromorphic architectures will comprise billions of such nanosynapses, which require a clear understanding of the physical mechanisms responsible for plasticity. Here we report on synapses based on ferroelectric tunnel junctions and show that STDP can be harnessed from inhomogeneous polarization switching. Through combined scanning probe imaging, electrical transport and atomic-scale molecular dynamics, we demonstrate that conductance variations can be modelled by the nucleation-dominated reversal of domains. Based on this physical model, our simulations show that arrays of ferroelectric nanosynapses can autonomously learn to recognize patterns in a predictable way, opening the path towards unsupervised learning in spiking neural networks.

  13. A Review of Domain Modelling and Domain Imaging Techniques in Ferroelectric Crystals.

    Science.gov (United States)

    Potnis, Prashant R; Tsou, Nien-Ti; Huber, John E

    2011-02-16

    The present paper reviews models of domain structure in ferroelectric crystals, thin films and bulk materials. Common crystal structures in ferroelectric materials are described and the theory of compatible domain patterns is introduced. Applications to multi-rank laminates are presented. Alternative models employing phase-field and related techniques are reviewed. The paper then presents methods of observing ferroelectric domain structure, including optical, polarized light, scanning electron microscopy, X-ray and neutron diffraction, atomic force microscopy and piezo-force microscopy. Use of more than one technique for unambiguous identification of the domain structure is also described.

  14. A Review of Domain Modelling and Domain Imaging Techniques in Ferroelectric Crystals

    Directory of Open Access Journals (Sweden)

    John E. Huber

    2011-02-01

    Full Text Available The present paper reviews models of domain structure in ferroelectric crystals, thin films and bulk materials. Common crystal structures in ferroelectric materials are described and the theory of compatible domain patterns is introduced. Applications to multi-rank laminates are presented. Alternative models employing phase-field and related techniques are reviewed. The paper then presents methods of observing ferroelectric domain structure, including optical, polarized light, scanning electron microscopy, X-ray and neutron diffraction, atomic force microscopy and piezo-force microscopy. Use of more than one technique for unambiguous identification of the domain structure is also described.

  15. Nonlinear piezoelectricity in epitaxial ferroelectrics at high electric fields.

    Science.gov (United States)

    Grigoriev, Alexei; Sichel, Rebecca; Lee, Ho Nyung; Landahl, Eric C; Adams, Bernhard; Dufresne, Eric M; Evans, Paul G

    2008-01-18

    Nonlinear effects in the coupling of polarization with elastic strain have been predicted to occur in ferroelectric materials subjected to high electric fields. Such predictions are tested here for a PbZr0.2Ti0.8O3 ferroelectric thin film at electric fields in the range of several hundred MV/m and strains reaching up to 2.7%. The piezoelectric strain exceeds predictions based on constant piezoelectric coefficients at electric fields from approximately 200 to 400 MV/m, which is consistent with a nonlinear effect predicted to occur at corresponding piezoelectric distortions.

  16. Heterogeneous Ferroelectric Solid Solutions Phases and Domain States

    CERN Document Server

    Topolov, Vitaly

    2012-01-01

    The book deals with perovskite-type ferroelectric solid solutions for modern materials science and applications, solving problems of complicated heterophase/domain structures near the morphotropic phase boundary and applications to various systems with morphotropic phases. In this book domain state–interface diagrams are presented for the interpretation of heterophase states in perovskite-type ferroelectric solid solutions. It allows to describe the stress relief in the presence of polydomain phases, the behavior of unit-cell parameters of coexisting phases and the effect of external electric fields. The novelty of the book consists in (i) the first systematization of data about heterophase states and their evolution in ferroelectric solid solutions (ii) the general interpretation of heterophase and domain structures at changing temperature, composition or electric field (iii) the complete analysis of interconnection domain structures, unit-cell parameters changes, heterophase structures and stress relief.

  17. Equivalent circuit analysis of a PbS/ferroelectric heterostructure

    Science.gov (United States)

    Pintilie, L.; Pintilie, I.; Botila, T.; Petre, D.; Licea, I.

    1997-02-01

    The frequency characteristic of the transverse photoelectric signal of a three electroded PbS/ferroelectric heterostructure is analyzed in this paper. The ferroelectric material is a lead titanate-zirconate ceramic obtained by hot pressing. It was found that the frequency characteristic of this signal is similar to a high-pass filter and depends on the properties of the ferroelectric substrates on which the PbS film was deposited. An equivalent circuit was proposed comparing the studied heterostructure with a metal-oxide semiconductor (MOS) structure. The circuit elements were determined fitting the obtained formula for the output signal with the experimental data. Some of the circuit elements were determined experimentally using various measuring techniques. It was found that the experimentally determined values are close to the theoretically determined values. The studied heterostructure can be changed into a band-pass filter adding some external circuit elements such as resistors and capacitors.

  18. Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P., E-mail: palto@online.ru; Draginda, Yu. A. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2010-11-15

    The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

  19. Anti-Ferroelectric Ceramics for High Energy Density Capacitors.

    Science.gov (United States)

    Chauhan, Aditya; Patel, Satyanarayan; Vaish, Rahul; Bowen, Chris R

    2015-11-25

    With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE) display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

  20. Elastic recoil detection analysis of ferroelectric films

    Energy Technology Data Exchange (ETDEWEB)

    Stannard, W.B.; Johnston, P.N.; Walker, S.R.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Scott, J.F. [New South Wales Univ., Kensington, NSW (Australia); Cohen, D.D.; Dytlewski, N. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1996-12-31

    There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the determination of separate energy spectra for individual elements or for small groups of elements In this work ERDA employing 77 MeV {sup 127}I ions has been used to analyse Strontium Bismuth Tantalate thin films at the heavy ion recoil facility at ANSTO, Lucas Heights. 9 refs., 5 figs.

  1. Effect of SHI irradiation on NBT-BT ceramics: Transformation of relaxor ferroelectric to ferroelectric nature

    Energy Technology Data Exchange (ETDEWEB)

    Shanmuga Sundari, S. [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Kumar, Binay [Crystal Lab, Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India); Asokan, K. [Inter University Accelerator Centre, New Delhi 110 067 (India); Dhanasekaran, R., E-mail: rdcgc@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer The NBT-BT ceramics at MPB were synthesized by conventional solid state reaction method. Black-Right-Pointing-Pointer The prepared ceramics were irradiated with 120 MeV Au{sup 9+} ions at different fluencies. Black-Right-Pointing-Pointer The grain size is increased after irradiation due to the increase of local lattice temperature. Black-Right-Pointing-Pointer As the fluence increases the relaxor nature of the material is transformed to the ferroelectric nature. - Abstract: The lead free NBT-BT ceramics prepared by conventional solid state reaction method were irradiated with 120 MeV Au{sup 9+} ions with different fluences. The structural, dielectric and piezoelectric studies were carried out before and after irradiation. The agglomeration and increase of grain size are observed in SEM analysis after the irradiation. The diffuse phase transition disappeared after high fluence of irradiation and the material becomes ferroelectric in nature. The piezoelectric properties were decreased due to the reduced stability of the ferroelectric domains after the irradiation.

  2. Ferroelectric crystals for photonic applications including nanoscale fabrication and characterization techniques

    CERN Document Server

    Ferraro, Pietro; De Natale, Paolo

    2015-01-01

    This book details the latest achievements in ferroelectric domain engineering and characterization at micro- and nano-scale dimensions and periods. It combines basic research of magnetic materials with device and production orientation.

  3. A Ferroelectric Semiconductor Absorber for Surpassing the Shockley-Queisser Limit, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Physical Sciences Inc. (PSI) proposes to develop new solar cells based on a ferroelectric semiconductor absorber material that can yield a 30% increase in efficiency...

  4. Reversible spin texture in ferroelectric Hf O2

    Science.gov (United States)

    Tao, L. L.; Paudel, Tula R.; Kovalev, Alexey A.; Tsymbal, Evgeny Y.

    2017-06-01

    Spin-orbit coupling effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible a nonvolatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, Hf O2 , which has been shown to exhibit robust ferroelectricity in a noncentrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric Hf O2 and demonstrate the appearance of chiral spin textures driven by spin-orbit coupling. We analyze these spin configurations in terms of the Rashba and Dresselhaus effects within the k .p Hamiltonian model and find that the Rashba-type spin texture dominates around the valence-band maximum, while the Dresselhaus-type spin texture prevails around the conduction band minimum. The latter is characterized by a very large Dresselhaus constant λD= 0.578 eV Å, which allows using this material as a tunnel barrier to produce tunneling anomalous and spin Hall effects that are reversible by ferroelectric polarization.

  5. Evaluation of a ferroelectric tunnel junction by ultraviolet-visible absorption using a removable liquid electrode

    Science.gov (United States)

    Lee, Hong-Sub; Kang, Kyung-Mun; Yeom, Geun Young; Park, Hyung-Ho

    2016-05-01

    Ferroelectric memristors offer a significant alternative to their redox-based analogs in resistive random access memory because a ferroelectric tunnel junction (FTJ) exhibits a memristive effect that induces resistive switching (RS) regardless of the operating current level. This RS results from a change in the ferroelectric polarization direction, allowing the FTJ to overcome the restriction encountered in redox-based memristors. Herein, the memristive effect of an FTJ was investigated by ultraviolet-visible (UV-Vis) absorption spectroscopy using a removable mercury (Hg) top electrode (TE), BaTiO3 (BTO) ferroelectric tunnel layer, La0.7Sr0.3MnO3 (LSMO) semiconductor bottom electrode, and wide-bandgap quartz (100) single-crystal substrate to determine the low-resistance state (LRS) and high-resistance state (HRS) of the FTJ. A BTO (110)/LSMO (110) polycrystal memristor involving a Hg TE showed a small memristive effect (switching ratio). This effect decreased with increasing read voltage because of a small potential barrier height. The LRS and HRS of the FTJ showed quasi-similar UV-Vis absorption spectra, consistent with the small energy difference between the valence-band maximum of BTO and Fermi level of LSMO near the interface between the LRS and HRS. This energy difference stemmed from the ferroelectric polarization and charge-screening effect of LSMO based on an electrostatic model of the FTJ.

  6. Ultrahigh piezoelectricity in ferroelectric ceramics by design

    Science.gov (United States)

    Li, Fei; Lin, Dabin; Chen, Zibin; Cheng, Zhenxiang; Wang, Jianli; Li, ChunChun; Xu, Zhuo; Huang, Qianwei; Liao, Xiaozhou; Chen, Long-Qing; Shrout, Thomas R.; Zhang, Shujun

    2018-03-01

    Piezoelectric materials, which respond mechanically to applied electric field and vice versa, are essential for electromechanical transducers. Previous theoretical analyses have shown that high piezoelectricity in perovskite oxides is associated with a flat thermodynamic energy landscape connecting two or more ferroelectric phases. Here, guided by phenomenological theories and phase-field simulations, we propose an alternative design strategy to commonly used morphotropic phase boundaries to further flatten the energy landscape, by judiciously introducing local structural heterogeneity to manipulate interfacial energies (that is, extra interaction energies, such as electrostatic and elastic energies associated with the interfaces). To validate this, we synthesize rare-earth-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), as rare-earth dopants tend to change the local structure of Pb-based perovskite ferroelectrics. We achieve ultrahigh piezoelectric coefficients d33 of up to 1,500 pC N-1 and dielectric permittivity ɛ33/ɛ0 above 13,000 in a Sm-doped PMN-PT ceramic with a Curie temperature of 89 °C. Our research provides a new paradigm for designing material properties through engineering local structural heterogeneity, expected to benefit a wide range of functional materials.

  7. Transformable ferroelectric control of dynamic magnetic permeability

    Science.gov (United States)

    Jiang, Changjun; Jia, Chenglong; Wang, Fenglong; Zhou, Cai; Xue, Desheng

    2018-02-01

    Magnetic permeability, which measures the response of a material to an applied magnetic field, is crucial to the performance of magnetic devices and related technologies. Its dynamic value is usually a complex number with real and imaginary parts that describe, respectively, how much magnetic power can be stored and lost in the material. Control of permeability is therefore closely related to energy redistribution within a magnetic system or energy exchange between magnetic and other degrees of freedom via certain spin-dependent interactions. To avoid a high power consumption, direct manipulation of the permeability with an electric field through magnetoelectric coupling leads to high efficiency and simple operation, but remains a big challenge in both the fundamental physics and material science. Here we report unambiguous evidence of ferroelectric control of dynamic magnetic permeability in a Co /Pb (Mg1/3Nb2/3) 0.7Ti0.3O3 (Co/PMN-PT) heterostructure, in which the ferroelectric PMN-PT acts as an energy source for the ferromagnetic Co film via an interfacial linear magnetoelectric interaction. The electric field tuning of the magnitude and line shape of the permeability offers a highly localized means of controlling magnetization with ultralow power consumption. Additionally, the emergence of negative permeability promises a new way of realizing functional nanoscale metamaterials with adjustable refraction index.

  8. Ultrahigh piezoelectricity in ferroelectric ceramics by design.

    Science.gov (United States)

    Li, Fei; Lin, Dabin; Chen, Zibin; Cheng, Zhenxiang; Wang, Jianli; Li, ChunChun; Xu, Zhuo; Huang, Qianwei; Liao, Xiaozhou; Chen, Long-Qing; Shrout, Thomas R; Zhang, Shujun

    2018-04-01

    Piezoelectric materials, which respond mechanically to applied electric field and vice versa, are essential for electromechanical transducers. Previous theoretical analyses have shown that high piezoelectricity in perovskite oxides is associated with a flat thermodynamic energy landscape connecting two or more ferroelectric phases. Here, guided by phenomenological theories and phase-field simulations, we propose an alternative design strategy to commonly used morphotropic phase boundaries to further flatten the energy landscape, by judiciously introducing local structural heterogeneity to manipulate interfacial energies (that is, extra interaction energies, such as electrostatic and elastic energies associated with the interfaces). To validate this, we synthesize rare-earth-doped Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT), as rare-earth dopants tend to change the local structure of Pb-based perovskite ferroelectrics. We achieve ultrahigh piezoelectric coefficients d 33 of up to 1,500 pC N -1 and dielectric permittivity ε 33 /ε 0 above 13,000 in a Sm-doped PMN-PT ceramic with a Curie temperature of 89 °C. Our research provides a new paradigm for designing material properties through engineering local structural heterogeneity, expected to benefit a wide range of functional materials.

  9. Complex Electric-Field Induced Phenomena in Ferroelectric/Antiferroelectric Nanowires

    Science.gov (United States)

    Herchig, Ryan Christopher

    Perovskite ferroelectrics and antiferroelectrics have attracted a lot of attention owing to their potential for device applications including THz sensors, solid state cooling, ultra high density computer memory, and electromechanical actuators to name a few. The discovery of ferroelectricity at the nanoscale provides not only new and exciting possibilities for device miniaturization, but also a way to study the fundamental physics of nanoscale phenomena in these materials. Ferroelectric nanowires show a rich variety of physical characteristics which are advantageous to the design of nanoscale ferroelectric devices such as exotic dipole patterns, a strong dependence of the polarization and phonon frequencies on the electrical and mechanical boundary conditions, as well as a dependence of the transition temperatures on the diameter of the nanowire. Antiferroelectricity also exists at the nanoscale and, due to the proximity in energy of the ferroelectric and antiferroelectric phases, a phase transition from the ferroelectric to the antiferroelectric phase can be facilitated through the application of the appropriate mechanical and electrical boundary conditions. While much progress has been made over the past several decades to understand the nature of ferroelectricity/antiferroelectricity in nanowires, many questions remain unanswered. In particular, little is known about how the truncated dimensions affect the soft mode frequency dynamics or how various electrical and mechanical boundary conditions might change the nature of the phase transitions in these ferroelectric nanowires. Could nanowires offer a distinct advantage for solid state cooling applications? Few studies have been done to elucidate the fundamental physics of antiferroelectric nanowires. How the polarization in ferroelectric nanowires responds to a THz electric field remains relatively underexplored as well. In this work, the aim is to to develop and use computational tools that allow first

  10. The materials physics companion

    CERN Document Server

    Fischer-Cripps, Anthony C

    2014-01-01

    Introduction to Materials Physics: Structure of matter. Solid state physics. Dynamic properties of solids. Dielectric Properties of Materials: Dielectric properties. Ferroelectric and piezoelectric materials. Dielectric breakdown. Applications of dielectrics. Magnetic Properties of Materials: Magnetic properties. Magnetic moment. Spontaneous magnetization. Superconductivity.

  11. Correction: Challenge in optoelectronic duplex switches: a red emission large-size single crystal and a unidirectional flexible thin film of a hybrid multifunctional material.

    Science.gov (United States)

    Zhu, Xiao; Zhang, Wan-Ying; Chen, Cheng; Ye, Qiong; Fu, Da-Wei

    2018-02-20

    Correction for 'Challenge in optoelectronic duplex switches: a red emission large-size single crystal and a unidirectional flexible thin film of a hybrid multifunctional material' by Xiao Zhu et al., Dalton Trans., 2018, DOI: 10.1039/c7dt04489e.

  12. Facile fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) nanodot arrays for organic ferroelectric memory

    International Nuclear Information System (INIS)

    Fang, Huajing; Yan, Qingfeng; Geng, Chong; Li, Qiang; Chan, Ngai Yui; Au, Kit; Ng, Sheung Mei; Leung, Chi Wah; Wa Chan, Helen Lai; Dai, Jiyan; Yao, Jianjun; Guo, Dong

    2016-01-01

    Nano-patterned ferroelectric materials have attracted significant attention as the presence of two or more thermodynamically equivalent switchable polarization states can be employed in many applications such as non-volatile memory. In this work, a simple and effective approach for fabrication of highly ordered poly(vinylidene fluoride–trifluoroethylene) P(VDF-TrFE) nanodot arrays is demonstrated. By using a soft polydimethylsiloxane mold, we successfully transferred the 2D array pattern from the initial monolayer of colloidal polystyrene nanospheres to the imprinted P(VDF-TrFE) films via nanoimprinting. The existence of a preferred orientation of the copolymer chain after nanoimprinting was confirmed by Fourier transform infrared spectra. Local polarization switching behavior was measured by piezoresponse force microscopy, and each nanodot showed well-formed hysteresis curve and butterfly loop with a coercive field of ∼62.5 MV/m. To illustrate the potential application of these ordered P(VDF-TrFE) nanodot arrays, the writing and reading process as non-volatile memory was demonstrated at a relatively low voltage. As such, our results offer a facile and promising route to produce arrays of ferroelectric polymer nanodots with improved piezoelectric functionality

  13. Facile fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) nanodot arrays for organic ferroelectric memory

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Huajing [Department of Applied Physics, The Hong Kong Polytechnic University (PolyU) Hunghom, Kowloon (Hong Kong); Department of Chemistry, Tsinghua University, Beijing 100084 (China); Yan, Qingfeng, E-mail: yanqf@mail.tsinghua.edu.cn, E-mail: jiyan.dai@polyu.edu.hk; Geng, Chong; Li, Qiang [Department of Chemistry, Tsinghua University, Beijing 100084 (China); Chan, Ngai Yui; Au, Kit; Ng, Sheung Mei; Leung, Chi Wah; Wa Chan, Helen Lai; Dai, Jiyan, E-mail: yanqf@mail.tsinghua.edu.cn, E-mail: jiyan.dai@polyu.edu.hk [Department of Applied Physics, The Hong Kong Polytechnic University (PolyU) Hunghom, Kowloon (Hong Kong); Yao, Jianjun [Asylum Research, Oxford Instruments, Shanghai 200233 (China); Guo, Dong [Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190 (China)

    2016-01-07

    Nano-patterned ferroelectric materials have attracted significant attention as the presence of two or more thermodynamically equivalent switchable polarization states can be employed in many applications such as non-volatile memory. In this work, a simple and effective approach for fabrication of highly ordered poly(vinylidene fluoride–trifluoroethylene) P(VDF-TrFE) nanodot arrays is demonstrated. By using a soft polydimethylsiloxane mold, we successfully transferred the 2D array pattern from the initial monolayer of colloidal polystyrene nanospheres to the imprinted P(VDF-TrFE) films via nanoimprinting. The existence of a preferred orientation of the copolymer chain after nanoimprinting was confirmed by Fourier transform infrared spectra. Local polarization switching behavior was measured by piezoresponse force microscopy, and each nanodot showed well-formed hysteresis curve and butterfly loop with a coercive field of ∼62.5 MV/m. To illustrate the potential application of these ordered P(VDF-TrFE) nanodot arrays, the writing and reading process as non-volatile memory was demonstrated at a relatively low voltage. As such, our results offer a facile and promising route to produce arrays of ferroelectric polymer nanodots with improved piezoelectric functionality.

  14. Facile fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) nanodot arrays for organic ferroelectric memory

    Science.gov (United States)

    Fang, Huajing; Yan, Qingfeng; Geng, Chong; Chan, Ngai Yui; Au, Kit; Yao, Jianjun; Ng, Sheung Mei; Leung, Chi Wah; Li, Qiang; Guo, Dong; Wa Chan, Helen Lai; Dai, Jiyan

    2016-01-01

    Nano-patterned ferroelectric materials have attracted significant attention as the presence of two or more thermodynamically equivalent switchable polarization states can be employed in many applications such as non-volatile memory. In this work, a simple and effective approach for fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) nanodot arrays is demonstrated. By using a soft polydimethylsiloxane mold, we successfully transferred the 2D array pattern from the initial monolayer of colloidal polystyrene nanospheres to the imprinted P(VDF-TrFE) films via nanoimprinting. The existence of a preferred orientation of the copolymer chain after nanoimprinting was confirmed by Fourier transform infrared spectra. Local polarization switching behavior was measured by piezoresponse force microscopy, and each nanodot showed well-formed hysteresis curve and butterfly loop with a coercive field of ˜62.5 MV/m. To illustrate the potential application of these ordered P(VDF-TrFE) nanodot arrays, the writing and reading process as non-volatile memory was demonstrated at a relatively low voltage. As such, our results offer a facile and promising route to produce arrays of ferroelectric polymer nanodots with improved piezoelectric functionality.

  15. Chemical approach to neutral-ionic valence instability, quantum phase transition, and relaxor ferroelectricity in organic charge-transfer complexes

    International Nuclear Information System (INIS)

    Horiuchi, Sachio; Kumai, Reiji; Okimoto, Yoichi; Tokura, Yoshinori

    2006-01-01

    Neutral-ionic (NI) phase transition is a reversible switching of organic charge-transfer complexes between distinct valence states by external stimuli. This phase transformation in the low-dimensional system is demonstrated to provide a variety of novel dielectric, structural, and electronic properties. Importantly, ionization of the electron donor-acceptor pairs is usually accompanied by a ferroelectric or antiferroelectric order of the molecular lattice, leading to huge dielectric response near the transition point. Although these characteristics are potentially useful for future electronic and optical applications, the thermally accessible NI transition (TINIT) is still an extremely rare case. The TINIT compounds including some new materials are overviewed in order to provide convenient guides to their design and experimental identifications. The phase transition and dielectric properties can be closely controlled in various ways depending on chemical and physical modifications of the crystals. Among them, a quantum phase transition and relaxor ferroelectricity, both of which are currently attracting subjects from both scientific and practical perspectives, are highlighted as the first achievements in organic charge-transfer complexes

  16. Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

    International Nuclear Information System (INIS)

    Ghoneim, M. T.; Hussain, M. M.

    2015-01-01

    Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures

  17. Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-08-05

    Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

  18. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    Directory of Open Access Journals (Sweden)

    Robert Göckeritz

    2016-04-01

    Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  19. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Göckeritz, Robert; Homonnay, Nico; Müller, Alexander [Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Fuhrmann, Bodo [Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de [Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany)

    2016-04-15

    Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  20. Switching and energy-storage characteristics in PLZT 2/95/5 antiferroelectric ceramic system

    Directory of Open Access Journals (Sweden)

    A. Peláiz-Barranco

    2016-12-01

    Full Text Available Switching mechanisms and energy-storage properties have been investigated in (Pb0.98La0.02(Zr0.95Ti0.050.995O3 antiferroelectric ceramics. The electric field dependence of polarization (P–E hysteresis loops indicates that both the ferroelectric (FE and antiferroelectric (AFE phases coexist, being the AFE more stable above 100∘C. It has been observed that the temperature has an important influence on the switching parameters. On the other hand, the energy-storage density, which has been calculated from the P–E hysteresis loops, shows values higher than 1J/cm3 for temperatures above 100∘C with around 73% of efficiency as average. These properties indicate that the studied ceramic system reveals as a promising AFE material for energy-storage devices application.

  1. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    Science.gov (United States)

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F. Y.; Gao, X. S.; Dai, J. Y.

    2015-08-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

  2. Accurate switching intensities and length scales in quasi-phase-matched materials

    DEFF Research Database (Denmark)

    Bang, Ole; Graversen, Torben Winther; Corney, Joel Frederick

    2001-01-01

    We consider unseeded typeI second-harmonic generation in quasi-phase-matched quadratic nonlinear materials and derive an accurate analytical expression for the evolution of the average intensity. The intensity- dependent nonlinear phase mismatch that is due to the cubic nonlinearity induced...... by quasi phase matching is found. The equivalent formula for the intensity of maximum conversion, the crossing of which changes the one-period nonlinear phase shift of the fundamental abruptly by p , corrects earlier estimates [Opt.Lett. 23, 506 (1998)] by a factor of 5.3. We find the crystal lengths...... that are necessary to obtain an optimal flat phase versus intensity response on either side of this separatrix intensity....

  3. Spin-filtering junctions with double ferroelectric barriers

    International Nuclear Information System (INIS)

    Yan, Ju; Ding-Yu, Xing

    2009-01-01

    An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

  4. Domain shape instabilities and dendrite domain growth in uniaxial ferroelectrics

    Science.gov (United States)

    Shur, Vladimir Ya.; Akhmatkhanov, Andrey R.

    2018-01-01

    The effects of domain wall shape instabilities and the formation of nanodomains in front of moving walls obtained in various uniaxial ferroelectrics are discussed. Special attention is paid to the formation of self-assembled nanoscale and dendrite domain structures under highly non-equilibrium switching conditions. All obtained results are considered in the framework of the unified kinetic approach to domain structure evolution based on the analogy with first-order phase transformation. This article is part of the theme issue `From atomistic interfaces to dendritic patterns'.

  5. Strain gradients in epitaxial ferroelectrics

    International Nuclear Information System (INIS)

    Catalan, G.; Noheda, B.; McAneney, J.; Sinnamon, L.J.; Gregg, J.M.

    2005-01-01

    X-ray analysis of ferroelectric thin layers of Ba 1/2 Sr 1/2 TiO 3 with different thicknesses reveals the presence of strain gradients across the films and allows us to propose a functional form for the internal strain profile. We use this to calculate the influence of strain gradient, through flexoelectric coupling, on the degradation of the ferroelectric properties of films with decreasing thickness, in excellent agreement with the observed behavior. This paper shows that strain relaxation can lead to smooth, continuous gradients across hundreds of nanometers, and it highlights the pressing need to avoid such strain gradients in order to obtain ferroelectric films with bulklike properties

  6. Phase diagrams of ferroelectric nanocrystals strained by an elastic matrix

    Science.gov (United States)

    Nikitchenko, A. I.; Azovtsev, A. V.; Pertsev, N. A.

    2018-01-01

    Ferroelectric crystallites embedded into a dielectric matrix experience temperature-dependent elastic strains caused by differences in the thermal expansion of the crystallites and the matrix. Owing to the electrostriction, these lattice strains may affect polarization states of ferroelectric inclusions significantly, making them different from those of a stress-free bulk crystal. Here, using a nonlinear thermodynamic theory, we study the mechanical effect of elastic matrix on the phase states of embedded single-domain ferroelectric nanocrystals. Their equilibrium polarization states are determined by minimizing a special thermodynamic potential that describes the energetics of an ellipsoidal ferroelectric inclusion surrounded by a linear elastic medium. To demonstrate the stability ranges of such states for a given material combination, we construct a phase diagram, where the inclusion’s shape anisotropy and temperature are used as two parameters. The ‘shape-temperature’ phase diagrams are calculated numerically for PbTiO3 and BaTiO3 nanocrystals embedded into representative dielectric matrices generating tensile (silica glass) or compressive (potassium silicate glass) thermal stresses inside ferroelectric inclusions. The developed phase maps demonstrate that the joint effect of thermal stresses and matrix-induced elastic clamping of ferroelectric inclusions gives rise to several important features in the polarization behavior of PbTiO3 and BaTiO3 nanocrystals. In particular, the Curie temperature displays a nonmonotonic variation with the ellipsoid’s aspect ratio, being minimal for spherical inclusions. Furthermore, the diagrams show that the polarization orientation with respect to the ellipsoid’s symmetry axis is controlled by the shape anisotropy and the sign of thermal stresses. Under certain conditions, the mechanical inclusion-matrix interaction qualitatively alters the evolution of ferroelectric states on cooling, inducing a structural transition

  7. Switching of the direction of reflectionless light propagation at exceptional points in non-PT-symmetric structures using phase-change materials.

    Science.gov (United States)

    Huang, Yin; Shen, Yuecheng; Min, Changjun; Veronis, Georgios

    2017-10-30

    We introduce a non-parity-time-symmetric three-layer structure, consisting of a gain medium layer sandwiched between two phase-change medium layers for switching of the direction of reflectionless light propagation. We show that for this structure unidirectional reflectionlessness in the forward direction can be switched to unidirectional reflectionlessness in the backward direction at the optical communication wavelength by switching the phase-change material Ge 2 Sb 2 Te 5 (GST) from its amorphous to its crystalline phase. We also show that it is the existence of exceptional points for this structure with GST in both its amorphous and crystalline phases which leads to unidirectional reflectionless propagation in the forward direction for GST in its amorphous phase, and in the backward direction for GST in its crystalline phase. Our results could be potentially important for developing a new generation of compact active free-space optical devices.

  8. Concept of rewritable organic ferroelectric random access memory in two lateral transistors-in-one cell architecture

    International Nuclear Information System (INIS)

    Kim, Min-Hoi; Lee, Gyu Jeong; Keum, Chang-Min; Lee, Sin-Doo

    2014-01-01

    We propose a concept of rewritable ferroelectric random access memory (RAM) with two lateral organic transistors-in-one cell architecture. Lateral integration of a paraelectric organic field-effect transistor (OFET), being a selection transistor, and a ferroelectric OFET as a memory transistor is realized using a paraelectric depolarizing layer (PDL) which is patterned on a ferroelectric insulator by transfer-printing. For the selection transistor, the key roles of the PDL are to reduce the dipolar strength and the surface roughness of the gate insulator, leading to the low memory on–off ratio and the high switching on–off current ratio. A new driving scheme preventing the crosstalk between adjacent memory cells is also demonstrated for the rewritable operation of the ferroelectric RAM. (paper)

  9. Ferroelectric Fluid Flow Control Valve

    Science.gov (United States)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    An active valve is controlled and driven by external electrical actuation of a ferroelectric actuator to provide for improved passage of the fluid during certain time periods and to provide positive closure of the valve during other time periods. The valve provides improved passage in the direction of flow and positive closure in the direction against the flow. The actuator is a dome shaped internally prestressed ferroelectric actuator having a curvature, said dome shaped actuator having a rim and an apex. and a dome height measured from a plane through said rim said apex that varies with an electric voltage applied between an inside and an outside surface of said dome shaped actuator.

  10. Ab-initio study of the relation between electric polarization and electric field gradients in ferroelectrics

    CERN Document Server

    Gonçalves, J N; Correia, J G; Butz, T; Picozzi, S; Fenta, A S; Amaral, V S

    2012-01-01

    The hyperfine interaction between the quadrupole moment of atomic nuclei and the electric field gradient (EFG) provides information on the electronic charge distribution close to a given atomic site. In ferroelectric materials, the loss of inversion symmetry of the electronic charge distribution is necessary for the appearance of the electric polarization. We present first-principles density functional theory calculations of ferroelectrics such as BaTiO$_{3}$, KNbO$_{3}$, PbTiO$_{3}$ and other oxides with perovskite structures, by focusing on both EFG tensors and polarization. We analyze the EFG tensor properties such as orientation and correlation between components and their relation with electric polarization. This work supports previous studies of ferroelectric materials where a relation between EFG tensors and polarization was observed, which may be exploited to study the ferroelectric order when standard techniques to measure polarization are not easily applied.

  11. Vacuum-evaporated ferroelectric films and heterostructures of vinylidene fluoride/trifluoroethylene copolymer

    Energy Technology Data Exchange (ETDEWEB)

    Draginda, Yu. A., E-mail: lbf@ns.crys.ras.ru; Yudin, S. G.; Lazarev, V. V.; Yablonskii, S. V.; Palto, S. P. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-05-15

    The potential of the vacuum method for preparing ferroelectric films and photonic heterostructures from organic materials is studied. Vacuum-evaporated films of fluoropolymers and heterostructures on their basis are obtained and their ferroelectric and spectral properties are studied. In particular, homogeneous films of the well-known piezoelectric polymer polyvinylidene fluoride and ferroelectric material vinylidene fluoride/trifluoroethylene copolymer (P(VDF/TFE)) are produced. Experimental studies of vacuum-evaporated P(VDF/TFE) films confirmed their ferroelectric properties. The heterostructures composed of alternating layers of P(VDF/TFE) copolymer molecules and azodye molecules are fabricated by vacuum evaporation. Owing to the controlled layer thickness and a significant difference in the refractive indices of the P(VDF/TFE) copolymer and azodyes, these heterostructures exhibit properties of photonic crystals. This finding is confirmed by the occurrence of a photonic band in the absorption spectra of the heterostructures.

  12. Quinuclidinium salt ferroelectric thin-film with duodecuple-rotational polarization-directions

    Science.gov (United States)

    You, Yu-Meng; Tang, Yuan-Yuan; Li, Peng-Fei; Zhang, Han-Yue; Zhang, Wan-Ying; Zhang, Yi; Ye, Heng-Yun; Nakamura, Takayoshi; Xiong, Ren-Gen

    2017-04-01

    Ferroelectric thin-films are highly desirable for their applications on energy conversion, data storage and so on. Molecular ferroelectrics had been expected to be a better candidate compared to conventional ferroelectric ceramics, due to its simple and low-cost film-processability. However, most molecular ferroelectrics are mono-polar-axial, and the polar axes of the entire thin-film must be well oriented to a specific direction to realize the macroscopic ferroelectricity. To align the polar axes, an orientation-controlled single-crystalline thin-film growth method must be employed, which is complicated, high-cost and is extremely substrate-dependent. In this work, we discover a new molecular ferroelectric of quinuclidinium periodate, which possesses six-fold rotational polar axes. The multi-axes nature allows the thin-film of quinuclidinium periodate to be simply prepared on various substrates including flexible polymer, transparent glasses and amorphous metal plates, without considering the crystallinity and crystal orientation. With those benefits and excellent ferroelectric properties, quinuclidinium periodate shows great potential in applications like wearable devices, flexible materials, bio-machines and so on.

  13. An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Moghadam, Reza M. [Department; Xiao, Zhiyong [Department; Ahmadi-Majlan, Kamyar [Department; Grimley, Everett D. [Department; Bowden, Mark [Environmental; amp, Biological Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ong, Phuong-Vu [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Chambers, Scott A. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Lebeau, James M. [Department; Hong, Xia [Department; Sushko, Peter V. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ngai, Joseph H. [Department

    2017-09-13

    The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.

  14. Challenge in optoelectronic duplex switches: a red emission large-size single crystal and a unidirectional flexible thin film of a hybrid multifunctional material.

    Science.gov (United States)

    Zhu, Xiao; Zhang, Wan-Ying; Chen, Cheng; Ye, Qiong; Fu, Da-Wei

    2018-02-13

    Photoelectric dual-function features in bulk crystals or flexible thin films make them excellent candidates for important and thriving applications in storage, sensing and other information fields. Based on superior advantages such as easy and environmentally friendly processing, mechanical flexibility, and ability to fabricate films and bulk single crystals; we designed a type of molecular material with a photoelectric multi-function switch, [N(NH 2 CH 2 CH 2 ) 3 ] 2 Mn 2 Cl 12 (compound 1), which exhibits intriguing temperature-dependent dielectric and red emission switchable characteristics. This material perfectly explains the advantages of molecular materials, while 1 can also be used to fabricate a transparent unidirectional film with ultra-flexibility. Moreover, this material shows the highest record in signal contrast of ∼5 (exceeding all the known molecular materials/crystalline switches, revealing its potential to obtain high-efficiency signal-to-noise ratio), sensitive dielectric bi-stability, and excellent switching anti fatigue. These features give it a high application value in integrated circuits, optoelectronic seamless integration devices and flexible multifunctional devices.

  15. Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation.

    Science.gov (United States)

    Sun, Huabin; Wang, Qijing; Li, Yun; Lin, Yen-Fu; Wang, Yu; Yin, Yao; Xu, Yong; Liu, Chuan; Tsukagoshi, Kazuhito; Pan, Lijia; Wang, Xizhang; Hu, Zheng; Shi, Yi

    2014-11-27

    Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm(2) V(-1) s(-1) is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the "reading" and "programming" speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.

  16. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

  17. A hysteresis model for ferroelectric ceramics with mechanism for minor loops

    International Nuclear Information System (INIS)

    Wang, Dan; Wang, Linxiang; Melnik, Roderick

    2017-01-01

    In the current paper, the coupled hysteretic behaviors of ferroelectric ceramics subjected to combined electromechanical stimulations are modeled. For a single grain, the polarization orientation switching process is modeled by employing the Euler–Lagrange equations and formulated as a coupled differential equation system. For ferroelectric ceramics, the principle axis orientations of the individual grains are assumed to be distributed in a certain profile, the behaviors of the ceramics are modeled as a weighted combination of the response of each grain. The influence of intergranular interactions is carefully discussed. Numerical results for the minor hysteresis loops in strain and polarization are demonstrated. Comparisons between these results and their experimental counterparts are presented to illustrate the attributes of the proposed model. - Highlights: • Coupled hysteresis in ferroelectric ceramics is efficiently captured. • Intergranular interactions are naturally incorporated into the model. • Mechanism for minor loops generation is well illustrated.

  18. A hysteresis model for ferroelectric ceramics with mechanism for minor loops

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dan [State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, 310027 Hangzhou (China); MS2Discovery Interdisciplinary Research Institute, Wilfrid Laurier University, Waterloo, ON N2L 3L5 (Canada); Wang, Linxiang, E-mail: wanglx236@zju.edu.cn [State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, 310027 Hangzhou (China); Melnik, Roderick [MS2Discovery Interdisciplinary Research Institute, Wilfrid Laurier University, Waterloo, ON N2L 3L5 (Canada)

    2017-01-30

    In the current paper, the coupled hysteretic behaviors of ferroelectric ceramics subjected to combined electromechanical stimulations are modeled. For a single grain, the polarization orientation switching process is modeled by employing the Euler–Lagrange equations and formulated as a coupled differential equation system. For ferroelectric ceramics, the principle axis orientations of the individual grains are assumed to be distributed in a certain profile, the behaviors of the ceramics are modeled as a weighted combination of the response of each grain. The influence of intergranular interactions is carefully discussed. Numerical results for the minor hysteresis loops in strain and polarization are demonstrated. Comparisons between these results and their experimental counterparts are presented to illustrate the attributes of the proposed model. - Highlights: • Coupled hysteresis in ferroelectric ceramics is efficiently captured. • Intergranular interactions are naturally incorporated into the model. • Mechanism for minor loops generation is well illustrated.

  19. Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation

    Science.gov (United States)

    Sun, Huabin; Wang, Qijing; Li, Yun; Lin, Yen-Fu; Wang, Yu; Yin, Yao; Xu, Yong; Liu, Chuan; Tsukagoshi, Kazuhito; Pan, Lijia; Wang, Xizhang; Hu, Zheng; Shi, Yi

    2014-11-01

    Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm2 V-1 s-1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the ``reading'' and ``programming'' speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.

  20. Domain walls and ferroelectric reversal in corundum derivatives

    Science.gov (United States)

    Ye, Meng; Vanderbilt, David

    2017-01-01

    Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding of the static and dynamic properties of domain walls is of pressing interest. In this work, we use first-principles methods to study the structures of 180∘ domain walls, both in their relaxed state and along the ferroelectric reversal pathway, in ferroelectrics belonging to the family of corundum derivatives. Our calculations predict their orientation, formation energy, and migration energy and also identify important couplings between polarization, magnetization, and chirality at the domain walls. Finally, we point out a strong empirical correlation between the height of the domain-wall-mediated polarization reversal barrier and the local bonding environment of the mobile A cations as measured by bond-valence sums. Our results thus provide both theoretical and empirical guidance for future searches for ferroelectric candidates in materials of the corundum derivative family.

  1. Operation of Ferroelectric Plasma Sources in a Gas Discharge Mode

    International Nuclear Information System (INIS)

    Dunaevsky, A.; Fisch, N.J.

    2004-01-01

    Ferroelectric plasma sources in vacuum are known as sources of ablative plasma, formed due to surface discharge. In this paper, observations of a gas discharge mode of operation of the ferroelectric plasma sources (FPS) are reported. The gas discharge appears at pressures between approximately 20 and approximately 80 Torr. At pressures of 1-20 Torr, there is a transition from vacuum surface discharge to the gas discharge, when both modes coexist and the surface discharges sustain the gas discharge. At pressures between 20 and 80 Torr, the surface discharges are suppressed, and FPS operate in pure gas discharge mode, with the formation of almost uniform plasma along the entire surface of the ceramics between strips. The density of the expanding plasma is estimated to be about 1013 cm-3 at a distance of 5.5 mm from the surface. The power consumption of the discharge is comparatively low, making it useful for various applications. This paper also presents direct measurements of the yield of secondary electron emission from ferroelectric ceramics, which, at low energies of primary electrons, is high and dependent on the polarization of the ferroelectric material

  2. Intrinsic size effects and topological phase transformations in ferroelectric nanoparticles embedded in dielectric media

    Science.gov (United States)

    Mangeri, John; Espinal, Yomery; Jokisaari, Andrea; Alpay, S. Pamir; Nakhmanson, Serge; Heinonen, Olle

    Self-assembled composite materials comprised of ferroelectric (FE) nanoinclusions dispersed in a dielectric matrix are being actively investigated for a variety of tunable functional properties attractive for a wide range of novel electronic and energy harvesting devices. However, the dependence of these functionalities on shapes, sizes, orientation and mutual arrangement of FE particles is currently poorly understood. In this study, we utilize a time-dependent thermodynamic Landau-Ginzburg-Devonshire approach combined with coupled-physics finite-element-method based simulations to elucidate the behavior of polarization in isolated spherical PbTiO3 or BaTiO3 nanoparticles embedded in the dielectric medium. The equilibrium polarization topology is strongly affected by particle diameter, as well as the choice of inclusion and matrix materials, with monodomain, vortex-like and multidomain patterns emerging for various combinations of size and materials parameters. In turn, this leads to radically different responses under hysteretic field switching, resulting in highly tunable size-dependent FE properties that should be easily observed experimentally.

  3. Multiferroics: Different ways to combine magnetism and ferroelectricity

    International Nuclear Information System (INIS)

    Khomskii, D.I.

    2006-01-01

    Multiferroics - materials which are simultaneously (ferro)magnetic and ferroelectric, and often also ferroelastic - attract now considerable attention, both because of the interesting physics involved and as they promise important practical applications. In this paper, I give a survey of microscopic factors determining the coexistence of these properties, and discuss different possible routes to combine them in one material. In particular, the role of the occupation of d-states in transition metal perovskites is discussed, possible role of spiral magnetic structures is stressed, and the novel mechanism of ferroelectricity in magnetic systems due to combination of site-centred and bond-centred charge ordering is presented. Microscopic nature of multiferroic behaviour in several particular materials, including magnetite Fe 3 O 4 , is discussed

  4. Graded ferroelectrics, transpacitors and transponents

    CERN Document Server

    Mantese, Joseph V

    2005-01-01

    The text details the experimental and theoretical aspects of newly emerging ferroelectric devices, and their extensions to other ferroic systems such as: ferromagnetics, ferroelastics, piezoelectrics, etc. The theory and experimental results pertaining to non-homogeneous active ferroic devices and structures are presented.

  5. Surface Acoustic Waves in ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Tarasenko A., Nataliya; Jastrabík, Lubomír; Tarasenko, Alexander

    2004-01-01

    Roč. 298, - (2004), s. 325-333 ISSN 0015-0193 R&D Projects: GA AV ČR IBS1010203 Keywords : Rayleigh waves * ferroelectric films * phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.517, year: 2004

  6. Room-temperature subnanosecond waveguide lasers in Nd:YVO4 Q-switched by phase-change VO2: A comparison with 2D materials.

    Science.gov (United States)

    Nie, Weijie; Li, Rang; Cheng, Chen; Chen, Yanxue; Lu, Qingming; Romero, Carolina; Vázquez de Aldana, Javier R; Hao, Xiaotao; Chen, Feng

    2017-04-06

    We report on room-temperature subnanosecond waveguide laser operation at 1064 nm in a Nd:YVO 4 crystal waveguide through Q-switching of phase-change nanomaterial vanadium dioxide (VO 2 ). The unique feature of VO 2 nanomaterial from the insulating to metallic phases offers low-saturation-intensity nonlinear absorptions of light for subnanosecond pulse generation. The low-loss waveguide is fabricated by using the femtosecond laser writing with depressed cladding geometry. Under optical pump at 808 nm, efficient pulsed laser has been achieved in the Nd:YVO 4 waveguide, reaching minimum pulse duration of 690 ps and maximum output average power of 66.7 mW. To compare the Q-switched laser performances by VO 2 saturable absorber with those based on two-dimensional materials, the 1064-nm laser pulses have been realized in the same waveguide platform with either graphene or transition metal dichalcogenide (in this work, WS 2 ) coated mirror. The results on 2D material Q-switched waveguide lasers have shown that the shortest pulses are with 22-ns duration, whilst the maximum output average powers reach ~161.9 mW. This work shows the obvious difference on the lasing properties based on phase-change material and 2D materials, and suggests potential applications of VO 2 as low-cost saturable absorber for subnanosecond laser generation.

  7. Complex Internal Bias Fields in Ferroelectric Hafnium Oxide.

    Science.gov (United States)

    Schenk, Tony; Hoffmann, Michael; Ocker, Johannes; Pešić, Milan; Mikolajick, Thomas; Schroeder, Uwe

    2015-09-16

    For the rather new hafnia- and zirconia-based ferroelectrics, a lot of questions are still unsettled. Among them is the electric field cycling behavior consisting of (1) wake-up, (2) fatigue, and (3) the recently discovered subcycling-induced split-up/merging effect of transient current peaks in a hysteresis measurement. In the present work, first-order reversal curves (FORCs) are applied to study the evolution of the switching and backswitching field distribution within the frame of the Preisach model for three different phenomena: (1) The pristine film contains two oppositely biased regions. These internal bias fields vanish during the wake-up cycling. (2) Fatigue as a decrease in the number of switchable domains is accompanied by a slight increase in the mean absolute value of the switching field. (3) The split-up effect is shown to also be related to local bias fields in a complex situation resulting from both the field cycling treatment and the measurement procedure. Moreover, the role of the wake-up phenomenon is discussed with respect to optimizing low-voltage operation conditions of ferroelectric memories toward reasonably high and stable remanent polarization and highest possible endurance.

  8. Meta-screening and permanence of polar distortion in metallized ferroelectrics

    Science.gov (United States)

    Zhao, Hong Jian; Filippetti, Alessio; Escorihuela-Sayalero, Carlos; Delugas, Pietro; Canadell, Enric; Bellaiche, L.; Fiorentini, Vincenzo; Íñiguez, Jorge

    2018-02-01

    Ferroelectric materials are characterized by a spontaneous polar distortion. The behavior of such distortion in the presence of free charge is the key to the physics of metallized ferroelectrics in particular, and of structurally polar metals more generally. Using first-principles simulations, here we show that a polar distortion resists metallization and the attendant suppression of long-range dipolar interactions in the vast majority of a sample of 11 representative ferroelectrics. We identify a meta-screening effect, occurring in the doped compounds as a consequence of the charge rearrangements associated to electrostatic screening, as the main factor determining the survival of a noncentrosymmetric phase. Our findings advance greatly our understanding of the essentials of structurally polar metals, and offer guidelines on the behavior of ferroelectrics upon field-effect charge injection or proximity to conductive device elements.

  9. Studies on the high-temperature ferroelectric transition of multiferroic hexagonal manganite RMnO3

    Science.gov (United States)

    Sim, Hasung; Jeong, Jaehong; Kim, Haeri; Cheong, S.-W.; Park, Je-Geun

    2018-03-01

    Hexagonal manganites are multiferroic materials with two highly-dissimilar phase transitions: a ferroelectric transition (from P63/mmc to P63cm) at a temperature higher than 1000 K and an antiferromagnetic transition at T N  =  65–130 K. Despite its critical relevance to the intriguing ferroelectric domain physics, the details of the ferroelectric transition are not well known to date primarily because of the ultra-high transition temperature. Using high-temperature x-ray diffraction experiments, we show that the ferroelectric transition is a single transition of abrupt order and R–Op displacement is the primary order parameter. This structural transition is then simultaneously accompanied by MnO5 tilting and the subsequent development of electric polarization.

  10. The Narrowest Band Gap Ever Observed in Molecular Ferroelectrics: Hexane-1,6-diammonium Pentaiodobismuth(III).

    Science.gov (United States)

    Zhang, Han-Yue; Wei, Zhenhong; Li, Peng-Fei; Tang, Yuan-Yuan; Liao, Wei-Qiang; Ye, Heng-Yun; Cai, Hu; Xiong, Ren-Gen

    2018-01-08

    Narrow band gaps and excellent ferroelectricity are intrinsically paradoxical in ferroelectrics as the leakage current caused by an increase in the number of thermally excited carriers will lead to a deterioration of ferroelectricity. A new molecular ferroelectric, hexane-1,6-diammonium pentaiodobismuth (HDA-BiI 5 ), was now developed through band gap engineering of organic-inorganic hybrid materials. It features an intrinsic band gap of 1.89 eV, and thus represents the first molecular ferroelectric with a band gap of less than 2.0 eV. Simultaneously, low-temperature solution processing was successfully applied to fabricate high-quality ferroelectric thin films based on HDA-BiI 5 , for which high-precision controllable domain flips were realized. Owing to its narrow band gap and excellent ferroelectricity, HDA-BiI 5 can be considered as a milestone in the exploitation of molecular ferroelectrics, with promising applications in high-density data storage and photovoltaic conversion. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Non-volatile memory based on the ferroelectric photovoltaic effect.

    Science.gov (United States)

    Guo, Rui; You, Lu; Zhou, Yang; Lim, Zhi Shiuh; Zou, Xi; Chen, Lang; Ramesh, R; Wang, Junling

    2013-01-01

    The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~10(5) rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique.

  12. Non-volatile memory based on the ferroelectric photovoltaic effect

    Science.gov (United States)

    Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

    2013-01-01

    The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

  13. Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application.

    Science.gov (United States)

    Shen, Zhenkui; Chen, Zhihui; Lu, Qian; Qiu, Zhijun; Jiang, Anquan; Qu, Xinping; Chen, Yifang; Liu, Ran

    2011-07-27

    In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

  14. Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7O3 for multi-bit storage application

    Directory of Open Access Journals (Sweden)

    Lu Qian

    2011-01-01

    Full Text Available Abstract In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7O3 (PZT] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

  15. Experimental observation of negative capacitance in ferroelectrics at room temperature.

    Science.gov (United States)

    Appleby, Daniel J R; Ponon, Nikhil K; Kwa, Kelvin S K; Zou, Bin; Petrov, Peter K; Wang, Tianle; Alford, Neil M; O'Neill, Anthony

    2014-07-09

    Effective negative capacitance has been postulated in ferroelectrics because there is a hysteresis in plots of polarization-electric field. Compelling experimental evidence of effective negative capacitance is presented here at room temperature in engineered devices, where it is stabilized by the presence of a paraelectric material. In future integrated circuits, the incorporation of such negative capacitance into MOSFET gate stacks would reduce the subthreshold slope, enabling low power operation and reduced self-heating.

  16. Static negative capacitance of a ferroelectric nano-domain nucleus.

    Czech Academy of Sciences Publication Activity Database

    Sluka, T.; Mokrý, Pavel; Setter, N.

    2017-01-01

    Roč. 111, č. 15 (2017), č. článku 152902. ISSN 0003-6951 R&D Projects: GA ČR(CZ) GA14-32228S Institutional support: RVO:61389021 Keywords : Ferroelectric materials * Capacitors * Bipolar transistors * Electrodes * Dielectrics Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.411, year: 2016

  17. A Review of Polymer-Stabilized Ferroelectric Liquid Crystals

    OpenAIRE

    Dierking, Ingo

    2014-01-01

    The polymer stabilized state of ferroelectric liquid crystals (FLC) is reviewed; and the effect of a dispersed polymer network in an FLC outlined and discussed. All fundamental material aspects are demonstrated; such as director tilt angle; spontaneous polarization; response time and viscosity; as well as the dielectric modes. It was found that the data can largely be explained by assuming an elastic interaction between the polymer network strands and the liquid crystal molecules. The elastic...

  18. Observation of ferroelectricity at room temperature in 1 nm thick conducting BaTiO3'δ

    Science.gov (United States)

    Lee, Seungran; Baasanforj, Lkhagvasuren; Chang, Jungwon; Hwang, Inwoong; Kim, Jungrae; Shim, Seungbo; Song, Jonghyun; Kim, Jinhee

    Requirements of multi-functionalities in thin-film systems have led important findings of unique physical character and degree of freedom which only exist in film forms. As growth technique gets advanced, one can decrease the film thickness even nm scale where its unique physical character still appears. Among those intriguing film systems, ferroelectric has been of interest. As a prototype ferroelectric, electrical properties of ultra-thin BaTiO3 (BTO) films have extensively studied, which is found that ferroelectricity sustains down to nm-thick films as theoretically predicted. However, efforts on determination of the minimum thickness in ferroelectric films was hindered by large leakage current. In this study, we used nm-thick BTO films showing metallic-like behaviour around room temperature (RT). Surprisingly, even the 2 unit-cells-thick metallic-like BTO film shows ferroelectric switching behaviour at RT! Observation of such ultra-thin conducting ferroelectric will enlarge its applicable fields leading realization of new functional devices and investigations of further physical phenomena.

  19. Percolation Magnetism in Ferroelectric Nanoparticles

    Science.gov (United States)

    Golovina, Iryna S.; Lemishko, Serhii V.; Morozovska, Anna N.

    2017-06-01

    Nanoparticles of potassium tantalate (KTaO3) and potassium niobate (KNbO3) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

  20. Percolation Magnetism in Ferroelectric Nanoparticles.

    Science.gov (United States)

    Golovina, Iryna S; Lemishko, Serhii V; Morozovska, Anna N

    2017-12-01

    Nanoparticles of potassium tantalate (KTaO 3 ) and potassium niobate (KNbO 3 ) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe 3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

  1. Transparent Ferroelectric Capacitors on Glass

    Directory of Open Access Journals (Sweden)

    Daniele Sette

    2017-10-01

    Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

  2. Transient nature of negative capacitance in ferroelectric field-effect transistors

    Science.gov (United States)

    Ng, Kwok; Hillenius, Steven J.; Gruverman, Alexei

    2017-10-01

    Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper, we discuss the implications of the transient nature of negative capacitance for its practical application. It is suggested that the NC effect needs to be characterized at the proper time scale to identify the type of circuits where functional NC-FETs can be used effectively.

  3. Enhancement of ferroelectricity in nanocones

    Czech Academy of Sciences Publication Activity Database

    Bykov, Pavlo; Suchaneck, G.; Jastrabík, Lubomír; Gerlach, G.

    2009-01-01

    Roč. 246, č. 10 (2009), s. 2396-2396 ISSN 0370-1972 R&D Projects: GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : ferroelectric size effect of cone-shaped nanoparticles * phase transition temperature dependence on nanocone volume Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.150, year: 2009

  4. Tuning the resistive switching memory in a metal–ferroelectric–semiconductor capacitor by field effect structure

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S.Y., E-mail: shouyu.wang@yahoo.com [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Guo, F.; Wang, X. [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Liu, W.F., E-mail: wfliu@tju.edu.cn [Department of Applied Physics, Faculty of Science, Tianjin University, Weijin Road, Nankai District, Tianjin 300072 (China); Gao, J., E-mail: jugao@hku.hk [Department of Physics, the University of Hong Kong, Pokfulam Road (Hong Kong)

    2015-11-30

    Highlights: • Bistable or tristable electrically conducting state is observed. • Coefficient can be tuned in situ by modulating carrier's density. • The RS effects may be of significance for multi-source controlled memory devices. - Abstract: Resistive switching (RS) effects based on a correlation between ferroelectric polarization and conductivity might become of particular interest for nonvolatile memory applications, because they are not subjected to the scaling restrictions. Here we report on RS behaviors modulated by a reversal of ferroelectric polarization in heterostructures comprising of a ferroelectric layer and a semiconducting manganite film. It is found that electrically conducting state is bistable or even tristable; and via the polarization flipping, a maximum resistive switching coefficient (R{sub max}/R{sub min}) is found to be larger than 3000 with bias of 6 V in Ag/BaTiO{sub 3}/La{sub 0.8}Ca{sub 0.2}MnO{sub 3} at room temperature. More importantly, employing field-effect structure with ferroelectric PMN-PT as substrate, we found that the resistive switching behaviors can be tuned in situ by modulating the concentration of carriers in the semiconducting manganite layer. Possible mechanisms are discussed on the basis of the interplay of bound ferroelectric charges, charged defects in ferroelectric layer and mobile carriers in manganite thin films. The giant RS effects observed here may be of significance for memory devices by combing electronic conduction with magnetic, spintronic, and optical functionalities.

  5. Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

    Science.gov (United States)

    John, Caroline S.; MacLeod, Todd C.; Evans, Joe; Ho, Fat D.

    2011-01-01

    We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

  6. Tunable multiband ferroelectric devices for reconfigurable RF-frontends

    CERN Document Server

    Zheng, Yuliang

    2013-01-01

    Reconfigurable RF-frontends aim to cope with the continuous pursuit of wider frequency coverage, higher efficiency, further compactness and lower cost of ownership. They are expected to lay the foundations of future software defined or cognitive radios. As a potential enabling technology for the frontends, the tunable ferroelectric devices have shown not only enhanced performance but also new functionalities. This book explores the recent developments in the field. It provides a cross-sectional perspective on the interdisciplinary research. With attention to the devices based on ceramic thick-films and crystal thin-films, the book reviews the adapted technologies of material synthesis, film deposition and multilayer circuitry. Next, it highlights the original classes of thin-film ferroelectric devices, including stratified metal-insulator-metal varactors with suppression of acoustic resonance and programmable bi-stable high frequency capacitors. At the end the book analyzes how the frontends can be reformed b...

  7. Multilevel information storage in ferroelectric polymer memories

    NARCIS (Netherlands)

    Tripathi, A.K.; Breemen, A.J.J.M. van; Shen, J.; Gao, Q.; Ivan, M.G.; Reimann, K.; Meinders, E.R.; Gelinck, G.H.

    2011-01-01

    Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors

  8. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM

    1996-01-01

    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric

  9. Hybrid improper ferroelectricity in Ruddlesden-Popper Ca{sub 3}(Ti,Mn){sub 2}O{sub 7} ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Liu, X. Q., E-mail: xqliu@zju.edu.cn, E-mail: xmchen59@zju.edu.cn; Wu, J. W.; Shi, X. X.; Zhao, H. J.; Zhou, H. Y.; Chen, X. M., E-mail: xqliu@zju.edu.cn, E-mail: xmchen59@zju.edu.cn [Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027 (China); Qiu, R. H.; Zhang, W. Q. [Department of Physics, Shanghai University, 99 Shangda Road, Shanghai 200444 (China)

    2015-05-18

    The hybrid improper ferroelectricity (HIF) has been proposed as a promising way to create multiferroic materials with strong magnetoelectric coupling by the first-principle calculation, and the experimental evidences of HIF in Ruddlesden-Poper Ca{sub 3}(Ti{sub 1−x}Mn{sub x}){sub 2}O{sub 7} (x = 0, 0.05, 0.1, and 0.15) ceramics have been shown in the present work. The room temperature ferroelectric hysteresis loops are observed in these ceramics, and a polar orthorhombic structure with two oxygen tilting modes has been confirmed by the X-ray powder diffraction. A first-order phase transition around 1100 K in Ca{sub 3}Ti{sub 2}O{sub 7} was evidenced, and the temperatures of phase transitions decrease linearly with increasing of the contents of Mn{sup 4+} ions. Based on the result of first-principle calculations, the polarization should be reversed by switching through the mediated Amam phase in Ca{sub 3}Ti{sub 2}O{sub 7} ceramics.

  10. Local symmetry approach to relaxor ferroelectrics

    Science.gov (United States)

    Nahas, Y.; Kornev, I.

    2013-08-01

    We propose a theoretical framework based on local gauge symmetries and develop a first-principles-derived effective Hamiltonian to study relaxor ferroelectrics. The approach is applied to PLZT relaxor and i) qualitatively reproduces many of its generic features, such as all the characteristic temperatures inherent to relaxor ferroelectrics and their dependence on the La concentration, ii) yields a rich variety of ferroelectric phases, depending on La content, iii) reveals the existence of non-perfectly ordered regions even in the ferroelectric state, iv) allows, for the first time, to compute the critical exponent γ in a relaxor ferroelectric, and v) clearly elucidates how the relaxor behavior, such as a diffusive phase transition, arises due to the disorder-induced non-trivial interplay between local and global scales.

  11. Flexoelectric piezoelectric metamaterials based on the bending of ferroelectric ceramic wafers

    Science.gov (United States)

    Zhang, Xiaotong; Liu, Jiliang; Chu, Mingjin; Chu, Baojin

    2016-08-01

    Conventional piezoelectric ceramics lose their piezoelectric properties near the Curie temperature (Tc), which limits their application at high temperatures. One approach to resolving this issue is to design flexoelectric piezoelectric composites or piezoelectric metamaterials by exploiting the flexoelectric effect of the ferroelectric materials. In this work, an experimental study on two designs of flexoelectric metamaterials is demonstrated. When a ferroelectric ceramic wafer is placed on a metal ring or has a domed shape, which is produced through the diffusion between two pieces of ferroelectric ceramic of different compositions at high temperatures, an apparent piezoelectric response originating from the flexoelectric effect can be measured under a stress. The apparent piezoelectric response of the materials based on the designs can be sustained well above Tc. This study provides an approach to designing materials for high-temperature electromechanical applications.

  12. Magnetic Material Assessment of a Novel Ultra-High Step-Up Converter with Single Semiconductor Switch and Galvanic Isolation for Fuel-Cell Power System

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2017-11-01

    Full Text Available In this paper, a novel step-up converter is proposed, which has the particular features of single semiconductor switch, ultra-high conversion ratio, galvanic isolation, and easy control. Therefore, the proposed converter is suitable for the applications of fuel-cell power system. Coupled inductors and switched capacitors are incorporated in the converter to obtain an ultra-high voltage ratio that is much higher than that of a conventional high step-up converter. Even if the turns ratio of coupled inductor and duty ratio are only to be 1 and 0.5, respectively, the converter can readily achieve a voltage gain of up to 18. Owing to this outstanding performance, it can also be applied to any other low voltage source for voltage boosting. In the power stage, only one active switch is used to handle the converter operation. In addition, the leakage energy of the two couple inductors can be totally recycled without any snubber, which simplifies the control mechanism and improves the conversion efficiency. Magnetic material dominates the conversion performance of the converter. Different types of iron cores are discussed for the possibility to serve as a coupled inductor. A 200 W prototype with 400 V output voltage is built to validate the proposed converter. In measurement, it indicates that the highest efficiency can be up to 94%.

  13. Integration of first-principles methods and crystallographic database searches for new ferroelectrics: Strategies and explorations

    International Nuclear Information System (INIS)

    Bennett, Joseph W.; Rabe, Karin M.

    2012-01-01

    In this concept paper, the development of strategies for the integration of first-principles methods with crystallographic database mining for the discovery and design of novel ferroelectric materials is discussed, drawing on the results and experience derived from exploratory investigations on three different systems: (1) the double perovskite Sr(Sb 1/2 Mn 1/2 )O 3 as a candidate semiconducting ferroelectric; (2) polar derivatives of schafarzikite MSb 2 O 4 ; and (3) ferroelectric semiconductors with formula M 2 P 2 (S,Se) 6 . A variety of avenues for further research and investigation are suggested, including automated structure type classification, low-symmetry improper ferroelectrics, and high-throughput first-principles searches for additional representatives of structural families with desirable functional properties. - Graphical abstract: Integration of first-principles methods with crystallographic database mining, for the discovery and design of novel ferroelectric materials, could potentially lead to new classes of multifunctional materials. Highlights: ► Integration of first-principles methods and database mining. ► Minor structural families with desirable functional properties. ► Survey of polar entries in the Inorganic Crystal Structural Database.

  14. Ferroelectric, dielectric and electrical behavior of two-dimensional lead sulphide nanosheets

    Science.gov (United States)

    Afsar, M. F.; Jamil, Arifa; Rafiq, M. A.

    2017-12-01

    Two-dimensional pure cubic phase lead sulphide (PbS) nanosheets were synthesized using solid state reaction method at ambient pressure and low temperature ~190 °C. From 210 K-300 K, small polaron hopping conduction mechanism was found to be dominant in PbS nanosheets at frequencies 20 Hz-2 MHz. High values of dielectric constant (~200) and electrical conductivity (of the order of 10-3 S m-1 at 300 K) of PbS nanosheets were extracted suggesting that it is a proficient material for capacitive storage devices. A high value of density of states of the order of 1032 eV-1 cm-3 was obtained for PbS nanosheets. The capacitance-voltage (CV) measurements of PbS nanosheets resulted in a stable butterfly loop due to switching of ferroelectric polarization at 300 K. The permittivity calculated at 0 V capacitance was ~150 and the dielectric loss remained below ~0.50. The polarization-voltage (QV) measurements showed a remnant polarization 23 µC cm-2 in PbS nanosheets. The leakage current density was below 0.5 mA cm-2 in the range  ±5 V.

  15. Photonics in switching

    CERN Document Server

    Midwinter, John E; Kelley, Paul

    1993-01-01

    Photonics in Switching provides a broad, balanced overview of the use of optics or photonics in switching, from materials and devices to system architecture. The chapters, each written by an expert in the field, survey the key technologies, setting them in context and highlighting their benefits and possible applications. This book is a valuable resource for those working in the communications industry, either at the professional or student level, who do not have extensive background knowledge or the underlying physics of the technology.

  16. Neutron and high-pressure X-ray diffraction study of hydrogen-bonded ferroelectric rubidium hydrogen sulfate.

    Science.gov (United States)

    Binns, Jack; McIntyre, Garry J; Parsons, Simon

    2016-12-01

    The pressure- and temperature-dependent phase transitions in the ferroelectric material rubidium hydrogen sulfate (RbHSO 4 ) are investigated by a combination of neutron Laue diffraction and high-pressure X-ray diffraction. The observation of disordered O-atom positions in the hydrogen sulfate anions is in agreement with previous spectroscopic measurements in the literature. Contrary to the mechanism observed in other hydrogen-bonded ferroelectric materials, H-atom positions are well defined and ordered in the paraelectric phase. Under applied pressure RbHSO 4 undergoes a ferroelectric transition before transforming to a third, high-pressure phase. The symmetry of this phase is revised to the centrosymmetric space group P2 1 /c, resulting in the suppression of ferroelectricity at high pressure.

  17. Photovoltaic properties of low band gap ferroelectric perovskite oxides

    Science.gov (United States)

    Huang, Xin; Paudel, Tula; Dong, Shuai; Tsymbal, Evgeny

    2015-03-01

    Low band gap ferroelectric perovskite oxides are promising for photovoltaic applications due to their high absorption in the visible optical spectrum and a possibility of having large open circuit voltage. Additionally, an intrinsic electric field present in these materials provides a bias for electron-hole separation without requiring p-n junctions as in conventional solar cells. High quality thin films of these compounds can be grown with atomic layer precision allowing control over surface and defect properties. Initial screening based on the electronic band gap and the energy dependent absorption coefficient calculated within density functional theory shows that hexagonal rare-earth manganites and ferrites are promising as photovoltaic absorbers. As a model, we consider hexagonal TbMnO3. This compound has almost ideal band gap of about 1.4 eV, very high ferroelectric Curie temperature, and can be grown epitaxially. Additionally hexagonal TbMnO3 offers possibility of coherent structure with transparent conductor ZnO. We find that the absorption is sufficiently high and dominated by interband transitions between the Mn d-bands. We will present the theoretically calculated photovoltaic efficiency of hexagonal TbMnO3 and explore other ferroelectric perovskite oxides.

  18. Phonon localization transition in relaxor ferroelectric PZN-5%PT

    International Nuclear Information System (INIS)

    Manley, Michael E.; Christianson, Andrew D.; Abernathy, Douglas L.; Sahul, Raffi

    2017-01-01

    Relaxor ferroelectric behavior occurs in many disordered ferroelectric materials but is not well understood at the atomic level. Recent experiments and theoretical arguments indicate that Anderson localization of phonons instigates relaxor behavior by driving the formation of polar nanoregions (PNRs). Here, we use inelastic neutron scattering to observe phonon localization in relaxor ferroelectric PZN-5%PT (0.95[Pb(Zn 1/3 Nb 2/3 )O 3 ]–0.05PbTiO 3 ) and detect additional features of the localization process. In the lead, up to phonon localization on cooling, the local resonant modes that drive phonon localization increase in number. The increase in resonant scattering centers is attributed to a known increase in the number of locally off centered Pb atoms on cooling. The transition to phonon localization occurs when these random scattering centers increase to a concentration where the Ioffe-Regel criterion is satisfied for localizing the phonon. Finally, we also model the effects of damped mode coupling on the observed phonons and phonon localization structure.

  19. Total-dose radiation-induced degradation of thin film ferroelectric capacitors

    International Nuclear Information System (INIS)

    Schwank, J.R.; Nasby, R.D.; Miller, S.L.; Rodgers, M.S.; Dressendorfer, P.V.

    1990-01-01

    Thin film PbZr y Ti 1-y O 3 (PZT) ferroelectric memories offer the potential for radiation-hardened, high-speed nonvolatile memories with good retention and fatigue properties. In this paper we explore in detail the radiation hardness of PZT ferroelectric capacitors. Ferroelectric capacitors were irradiated using x-ray and Co-60 sources to dose levels up to 16 Mrad(Si). The capacitors were characterized for their memory properties both before and after irradiation. The radiation hardness was process dependent. Three out of four processes resulted in capacitors that showed less than 30% radiation-induced degradation in retained polarization charge and remanent polarization after irradiating to 16 Mrad(Si). On the other hand, one of the processes showed significant radiation-induced degradation in retained polarization charge and remanent polarization at dose levels above 1 Mrad(Si). The decrease in retained polarization charge appears to be due to an alteration of the switching characteristics of the ferroelectric due to changes in the internal fields. The radiation-induced degradation is recoverable by a postirradiation biased anneal and can be prevented entirely if devices are cycled during irradiation. The authors have developed a model to simulate the observed degradation

  20. Review of opening switch technology

    International Nuclear Information System (INIS)

    Kristiansen, M.; Schoenbach, K.M.; Schaefer, G.

    1984-01-01

    Review of opening switch technology is given. Classification of open switches applied in pulsed power technology is presented. The most familiar opening switches are fuses. It is shown that a strong oxidizer (H 2 O 2 in water), especially in combination with wires of Al, increases the maximum voltage. Thermally driven opening switches are the result of attempts to achive the speed and economy of fuse opening switches but with added advantage of repetitive operation. The search for coordinate materials for this type of opening switch is in its infancy and it is difficult to predict how successful such a switch may be. Explosive opening switches offer the possibility of precise timing and permit the delay before explosion to be controlled independently of current flowing through the switch. Plasma guns, dense plasma focus and MHD switches are also considered. Diffuse discharge opening switches are attractive for repetitive operation. The plasma erosion switch operates on a very short time scale of 10 ns to 100 ns, both to regard to conduction and opening times

  1. Pseudospark switches

    International Nuclear Information System (INIS)

    Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

    1987-01-01

    The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

  2. Negative capacitance in multidomain ferroelectric superlattices.

    Science.gov (United States)

    Zubko, Pavlo; Wojdeł, Jacek C; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-23

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  3. Mechanical confinement for tuning ferroelectric response in PMN-PT single crystal

    Science.gov (United States)

    Patel, Satyanarayan; Chauhan, Aditya; Vaish, Rahul

    2015-02-01

    Ferroelectrics form an important class of materials and are employed for a variety of applications. However, specific applications dictate the need of tailored ferroelectric response. This creates a requirement to obtain ferroelectric materials with tunable properties. Generally, chemical modifications or domain engineering are employed to this effect. This study attempts to shed light on the use of compressive pre-stresses for tuning and enhancing the ferroelectric properties. For the purpose, polarization versus electric field hysteresis data for 68Pb(Mn1/3Nb2/3)O3-32PbTiO3 (PMN-PT) single crystals were obtained as a function of uniaxial compressive stresses and operating temperatures. These data were utilized to investigate the effects of mechanical confinement for four individual case studies of electrocaloric effect, electrical energy storage, pyroelectric, and piezoelectric effect. A significant improvement was obtained for all case studies. The adiabatic temperature change was improved by ≈80% (28 MPa, 353 K); energy storage density increased by a factor of five (28 MPa, 353 K); pyroelectric figure of merits improved by an order of magnitude (21 MPa) and the piezoelectric coefficient was tailored (variable stress). The results offer promising insight into the use of directional confinement for improving application specific ferroelectric properties in PMN-PT single crystal.

  4. Nanoscale ferroelectrics and multiferroics key processes and characterization issues, and nanoscale effects

    CERN Document Server

    Alguero, Miguel

    2016-01-01

    This book reviews the key issues in processing and characterization of nanoscale ferroelectrics and multiferroics, and provides a comprehensive description of their properties, with an emphasis in differentiating size effects of extrinsic ones like boundary or interface effects. Recently described nanoscale novel phenomena are also addressed. Organized into three parts it addresses key issues in processing (nanostructuring), characterization (of the nanostructured materials) and nanoscale effects. Taking full advantage of the synergies between nanoscale ferroelectrics and multiferroics, it covers materials nanostructured at all levels, from ceramic technologies like ferroelectric nanopowders, bulk nanostructured ceramics and thick films, and magnetoelectric nanocomposites, to thin films, either polycrystalline layer heterostructures or epitaxial systems, and to nanoscale free standing objects with specific geometries, such as nanowires and tubes at different levels of development. The book is developed from t...

  5. Room-temperature biosynthesis of ferroelectric barium titanate nanoparticles.

    Science.gov (United States)

    Bansal, Vipul; Poddar, Pankaj; Ahmad, Absar; Sastry, Murali

    2006-09-13

    The syntheses of inorganic materials by biological systems is characterized by processes that occur close to ambient temperatures, pressures, and neutral pH, as is exemplified by biosilicification and biomineralization processes in nature. Conversely, laboratory-based syntheses of oxide materials often require extremes of temperature and pressure. We have shown here the extracellular, room-temperature biosynthesis of 4-5 nm ternary oxide nanoparticles such as barium titanate (BT) using a fungus-mediated approach. The tetragonality as well as a lowered Curie transition temperature in sub-10 nm particles was established, and the ferroelectricity in these particles was shown using Kelvin probe microscopy.

  6. Switching antidepressants

    African Journals Online (AJOL)

    depressive disorder, with response rates of 50-60%. Switching within or between classes of antidepressants is often required in patients with an insufficient response to SSRIs.12 Because they share a similar mechanism of action, the immediate substitution of one SSRI for another is probably the easiest switching option.

  7. Structural consequences of ferroelectric nanolithography.

    Science.gov (United States)

    Jo, Ji Young; Chen, Pice; Sichel, Rebecca J; Baek, Seung-Hyub; Smith, Ryan T; Balke, Nina; Kalinin, Sergei V; Holt, Martin V; Maser, Jörg; Evans-Lutterodt, Kenneth; Eom, Chang-Beom; Evans, Paul G

    2011-08-10

    Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O(3) thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

  8. Static Characteristics of the Ferroelectric Transistor Inverter

    Science.gov (United States)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  9. Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy.

    Science.gov (United States)

    Tenne, D A; Bruchhausen, A; Lanzillotti-Kimura, N D; Fainstein, A; Katiyar, R S; Cantarero, A; Soukiassian, A; Vaithyanathan, V; Haeni, J H; Tian, W; Schlom, D G; Choi, K J; Kim, D M; Eom, C B; Sun, H P; Pan, X Q; Li, Y L; Chen, L Q; Jia, Q X; Nakhmanson, S M; Rabe, K M; Xi, X X

    2006-09-15

    We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by approximately 500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

  10. Probing the ionic dielectric constant contribution in the ferroelectric phase of the Fabre salts

    Science.gov (United States)

    de Souza, Mariano; Squillante, Lucas; Sônego, Cesar; Menegasso, Paulo; Foury-Leylekian, Pascale; Pouget, Jean-Paul

    2018-01-01

    In strongly correlated organic materials it has been pointed out that charge ordering could also achieve electronic ferroelectricity at the same critical temperature Tco. A prototype of such phenomenon are the quasi-one-dimensional (TMTTF)2X Fabre salts. However, the stabilization of a long-range ferroelectric ground state below Tco requires the break of inversion symmetry, which should be accompanied by a lattice deformation. In this paper we investigate the role of the monovalent counteranion X in such mechanism. For this purpose, we measured the quasistatic dielectric constant along the c*-axis direction, where layers formed by donors and anions alternate. Our findings show that the ionic charge contribution is three orders of magnitude lower than the intrastack electronic response. The c* dielectric constant (εc*') probes directly the charge response of the monovalent anion X , since the anion mobility in the structure should help to stabilize the ferroelectric ground state. Furthermore, our εc*' measurements show that the dielectric response is thermally broaden below Tco if the ferroelectric transition occurs in the temperature range where the anion movement begin to freeze in their methyl groups cavity. In the extreme case of the PF6-H12 salt, where Tco occurs at the freezing point, a relaxor-type ferroelectricity is observed. Also, because of the slow kinetics of the anion sublattice, global hysteresis effects and reduction of the charge response upon successive cycling are observed. In this context, we propose that anions control the order-disorder or relaxation character of the ferroelectric transition of the Fabre salts. Yet, our results show that x-ray irradiation damages change the well-defined ferroelectric response of the AsF6 pristine salt into a relaxor.

  11. Microfabricated triggered vacuum switch

    Science.gov (United States)

    Roesler, Alexander W [Tijeras, NM; Schare, Joshua M [Albuquerque, NM; Bunch, Kyle [Albuquerque, NM

    2010-05-11

    A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.

  12. Nonlinear optical switching of PDA/Ag hybrid materials based on temperature- and pH-responsive threading and dethreading of cyclodextrin polypseudorotaxane

    Energy Technology Data Exchange (ETDEWEB)

    Rao, Jinan; Wen, Xiaolei; Leng, Jing; Wang, Jin; Zou, Gang; Zhang, Qijin [University of Science and Technology of China, CAS Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, Key Laboratory of Optoelectronic Science and Technology in Anhui Province, Anhui (China)

    2012-11-15

    We developed a novel temperature and pH dual-responsive supramolecular system in which the aggregation and disaggregation of polydiacetylene/silver (PDA/Ag) hybrid nanocrystals can be mediated by environmentally responsive threading and dethreading processes of polypseudorotaxane. The PDA/Ag hybrid nanocrystals provide a nonlinear optical (NLO) property. The host-guest interaction between poly(ethylene glycol) (PEG) and cyclodextrin (CD) cavities on the surface of the hybrid nanocrystals causes the PDA/Ag hybrid nanocrystals to be sufficiently close to each other for providing an enhanced surface plasmon resonance and a corresponding NLO effect. NLO switching of the colloidal materials can be easily realized by varying temperature and pH. The facile preparation procedures and their response to the surrounding media render these novel hybrid colloidal materials potential candidates for applications in sensors, catalysis and optical/electronic devices. (orig.)

  13. Dimensional scaling of perovskite ferroelectric thin films

    Science.gov (United States)

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  14. Tuning the collective switching behavior of azobenzene/Au hybrid materials: flexible versus rigid azobenzene backbones and Au(111) surfaces versus curved Au nanoparticles.

    Science.gov (United States)

    Liu, Chunyan; Zheng, Dong; Hu, Weigang; Zhu, Qiang; Tian, Ziqi; Zhao, Jun; Zhu, Yan; Ma, Jing

    2017-11-09

    determines the collective switching behavior of Au@AB materials. These results are expected to guide rational designs of Au@AB hybrid materials for different uses.

  15. First-principles study of magnetoelectric effects and ferroelectricity in complex oxides

    Science.gov (United States)

    Ye, Meng

    This thesis contains several investigations of magnetoelectric effects and ferroelectricity in complex oxides studied via first-principles calculations. We start by reviewing the mechanisms of ferroelectricity and magnetoelectric effects, and then we give a brief introduction to the first-principles computational methods that are involved. Next, our investigations are divided into two parts. The first half focuses on the magnetoelectric effects, while the second half is mainly on ferroelectricity. The first half aims to examine the lattice contribution to the magnetoelectricity by investigating the dynamical magnetic charge tensors induced by different mechanisms. Through the study of Cr2O3 and a fictitious material KITPite, we find that the dynamical magnetic charges driven by exchange striction are more significant than the ones induced by spin-orbit coupling. Since the lattice contribution to the magnetoelectric effect is proportional to the dynamical magnetic charges, we also study the magnetic charges and the magnetoelectric coupling in hexagonal manganite RMnO3 and ferrite RFeO3. Our results further confirm the importance of the exchange-striction mechanism in inducing large magnetic charges, but we also notice that the magnetoelectric contributions from various phonons tend to cancel each other, leading to a great reduction of the total coupling. These investigations not only provide a prediction of the magnetoelectric coupling constant in RMnO3 and RFeO3, but also emphasize the importance of phonons in magnetoelectric coupling. In the second half of the thesis, we focus on predicting new ferroelectrics in the family of corundum derivatives. Many new corundum derivatives have been synthesized recently; these are automatically polar, and many are magnetic as well. However, a polar material is only called ferroelectric if the polarization is reversible by an external field, and it is not yet clear whether or not this is the case for these new materials

  16. Bulletin of Materials Science | News

    Indian Academy of Sciences (India)

    pp 257-262 Electronic Supplementary Material. A comparative study regarding effects of interfacial ferroelectric Bi4Ti3O12 (BTO) layer on electrical characteristics of Au/-Si structures · M Yildirim M Gökçen · More Details Abstract Fulltext PDF. Present study focuses on the effects of interfacial ferroelectric BTO layer on the ...

  17. Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

  18. Four-state ferroelectric spin-valve

    Czech Academy of Sciences Publication Activity Database

    Quindeau, A.; Fina, I.; Martí, Xavier; Apachitei, G.; Ferrer, P.; Nicklin, C.; Pippel, E.; Hesse, D.; Alexe, M.

    2015-01-01

    Roč. 5, May (2015), 09749 ISSN 2045-2322 Institutional support: RVO:68378271 Keywords : electronic and spintronic devices * ferroelectrics and multiferroics Subject RIV: BE - Theoretical Physics Impact factor: 5.228, year: 2015

  19. Prospects and applications near ferroelectric quantum phase transitions: a key issues review

    Science.gov (United States)

    Chandra, P.; Lonzarich, G. G.; Rowley, S. E.; Scott, J. F.

    2017-11-01

    The emergence of complex and fascinating states of quantum matter in the neighborhood of zero temperature phase transitions suggests that such quantum phenomena should be studied in a variety of settings. Advanced technologies of the future may be fabricated from materials where the cooperative behavior of charge, spin and current can be manipulated at cryogenic temperatures. The progagating lattice dynamics of displacive ferroelectrics make them appealing for the study of quantum critical phenomena that is characterized by both space- and time-dependent quantities. In this key issues article we aim to provide a self-contained overview of ferroelectrics near quantum phase transitions. Unlike most magnetic cases, the ferroelectric quantum critical point can be tuned experimentally to reside at, above or below its upper critical dimension; this feature allows for detailed interplay between experiment and theory using both scaling and self-consistent field models. Empirically the sensitivity of the ferroelectric T c’s to external and to chemical pressure gives practical access to a broad range of temperature behavior over several hundreds of Kelvin. Additional degrees of freedom like charge and spin can be added and characterized systematically. Satellite memories, electrocaloric cooling and low-loss phased-array radar are among possible applications of low-temperature ferroelectrics. We end with open questions for future research that include textured polarization states and unusual forms of superconductivity that remain to be understood theoretically.

  20. Ferroelectricity in the multiferroic hexagonal manganites

    OpenAIRE

    Lilienblum, Martin; Lottermoser, Thomas; Manz, Sebastian; Selbach, Sverre Magnus; Cano, Andres; Fiebig, Manfred

    2015-01-01

    Since their discovery in 1963 the hexagonal manganites have consolidated their role as exotic ferroelectrics with astonishing functionalities. Their introduction as room-temperature device ferroelectrics was followed by observations of giant flexoelectricity, multiferroicity with magnetoelectric domain and domain-wall coupling, protected vortex domain structures, topological domain-scaling behaviour and domain walls with tunable conductance and magnetism. Even after half a century, however, t...

  1. Ferroelectric Phase Diagram of PVDF:PMMA

    OpenAIRE

    Li, Mengyuan; Stingelin, Natalie; Michels, Jasper J.; Spijkman, Mark-Jan; Asadi, Kamal; Feldman, Kirill; Blom, Paul W. M.; de Leeuw, Dago M.

    2012-01-01

    We have investigated the ferroelectric phase diagram of poly(vinylidene fluoride) (PVDF) and poly(methyl methacrylate) (PMMA). The binary nonequilibrium temperature composition diagram was determined and melting of alpha- and beta-phase PVDF was identified. Ferroelectric beta-PVDF:PMMA blend films were made by melting, ice quenching, and subsequent annealing above the glass transition temperature of PMMA, close to the melting temperature of PVDF. Addition of PMMA suppresses the crystallizatio...

  2. Poly (vinylidene fluoride-trifluoroethylene)/barium titanate nanocomposite for ferroelectric nonvolatile memory devices

    International Nuclear Information System (INIS)

    Valiyaneerilakkal, Uvais; Varghese, Soney

    2013-01-01

    The effect of barium titanate (BaTiO 3 ) nanoparticles (particle size <100 nm) on the ferroelectric properties of poly (vinylidenefluoride-trifluoroethylene) P(VDF-TrFE) copolymer has been studied. Different concentrations of nanoparticles were added to P(VDF-TrFE) using probe sonication, and uniform thin films were made. Polarisation - Electric field (P-E) hysteresis analysis shows an increase in remnant polarization (P r ) and decrease in coercive voltage (V c ). Piezo-response force microscopy analysis shows the switching capability of the polymer composite. The topography and surface roughness was studied using atomic force microscopy. It has been observed that this nanocomposite can be used for the fabrication of non-volatile ferroelectric memory devices.

  3. Poly (vinylidene fluoride-trifluoroethylene/barium titanate nanocomposite for ferroelectric nonvolatile memory devices

    Directory of Open Access Journals (Sweden)

    Uvais Valiyaneerilakkal

    2013-04-01

    Full Text Available The effect of barium titanate (BaTiO3 nanoparticles (particle size <100nm on the ferroelectric properties of poly (vinylidenefluoride-trifluoroethylene P(VDF-TrFE copolymer has been studied. Different concentrations of nanoparticles were added to P(VDF-TrFE using probe sonication, and uniform thin films were made. Polarisation - Electric field (P-E hysteresis analysis shows an increase in remnant polarization (Pr and decrease in coercive voltage (Vc. Piezo-response force microscopy analysis shows the switching capability of the polymer composite. The topography and surface roughness was studied using atomic force microscopy. It has been observed that this nanocomposite can be used for the fabrication of non-volatile ferroelectric memory devices.

  4. Air-stable memory array of bistable rectifying diodes based on ferroelectric-semiconductor polymer blends

    Science.gov (United States)

    Kumar, Manasvi; Sharifi Dehsari, Hamed; Anwar, Saleem; Asadi, Kamal

    2018-03-01

    Organic bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers have emerged as promising candidates for non-volatile information storage for low-cost solution processable electronics. One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here, we present a memory array fabricated with an air-stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric conditions (23 °C and 45% relative humidity). The memory diodes showed on/off ratios greater than 100 and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we demonstrate a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.

  5. Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

    Science.gov (United States)

    Singh, Kirandeep; Kaur, Davinder

    2017-02-01

    The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

  6. Soft tilt and rotational modes in the hybrid improper ferroelectric Ca3Mn2O7

    Science.gov (United States)

    Glamazda, A.; Wulferding, D.; Lemmens, P.; Gao, B.; Cheong, S.-W.; Choi, K.-Y.

    2018-03-01

    Raman spectroscopy is employed to probe directly the soft rotation and tilting modes, which are two primary order parameters predicted in the hybrid improper ferroelectric material Ca3Mn2O7 . We observe a giant softening of the 107 -cm-1 octahedron tilting mode by 26 cm-1 on heating through the structural transition from a ferroelectric to paraelectric orthorhombic phase. This is contrasted by a small softening of the 150 -cm-1 rotational mode by 6 cm-1. In the intermediate phase, the competing soft modes with different symmetries coexist, bringing about many-faceted anomalies in spin excitations and lattice vibrations. Our work demonstrates that the soft rotation and tilt patterns, relying on a phase-transition path, are a key factor in determining ferroelectric, magnetic, and lattice properties of Ca3Mn2O7 .

  7. Long-Range Effects on the Pyroelectric Coefficient of Ferroelectric Superlattice

    Science.gov (United States)

    Dong, Wen; Yao, Dong-Lai; Wu, Yin-Zhong; Li, Zhen-Ya

    2002-12-01

    Long-range effects on the pyroelectric coefficient of a ferroelectric superlattice consisting of two different ferroelectric materials are investigated based on the transverse Ising model. The effects of the interfacial coupling and the thickness of one period on the pyroelectric coefficient of the ferroelectric superlattice are studied by taking into account the long-range interaction. It is found that with the increase of the strength of the long-range interaction, the pyroelectric coefficient decreases when the temperature is lower than the phase transition temperature; the number of the pyroelectric peaks decreases gradually and the phase transition temperature increases. It is also found that with the decrease of the interfacial coupling and the thickness of one period, the phase transition temperature and the number of the pyroelectric peaks decrease. The project supported by National Natural Science Foundation of China under Grant No. 10 174 049 and Natural Science Foundation of Jiangsu Education Committee of China under Grant No. 00KJB140009

  8. Negative Thermal Expansion and Ferroelectric Oxides in Electronic Device Composites

    Science.gov (United States)

    Trujillo, Joy Elizabeth

    Electronic devices increasingly pervade our daily lives, driving the need to develop components which have material properties that can be designed to target a specific need. The principle motive of this thesis is to investigate the effects of particle size and composition on three oxides which possess electronic and thermal properties essential to designing improved ceramic composites for more efficient, high energy storage devices. A metal matrix composite project used the negative thermal expansion oxide, ZrW2O 8, to offset the high thermal expansion of the metal matrix without sacrificing high thermal conductivity. Composite preparation employed a powder mixing technique to achieve easy composition control and homogenous phase distribution in order to build composites which target a specific coefficient of thermal expansion (CTE). A tailorable CTE material is desirable for overcoming thermomechanical failure in heat sinks or device casings. This thesis also considers the particle size effect on dielectric properties in a common ferroelectric perovskite, Ba1-xSrxTiO 3. By varying the Ba:Sr ratio, the Curie temperature can be adjusted and by reducing the particle size, the dielectric constant can be increased and hysteresis decreased. These conditions could yield anonymously large dielectric constants near room temperature. However, the ferroelectric behavior has been observed to cease below a minimum size of a few tens of nanometers in bulk or thin film materials. Using a new particle slurry approach, electrochemical impedance spectroscopy allows dielectric properties to be determined for nanoparticles, as opposed to conventional methods which measure only bulk or thin film dielectric properties. In this manner, Ba1-xSrxTiO3 was investigated in a new size regime, extending the theory on the ferroelectric behavior to film heterostructures of STO/YSZ are used in electrochemical energy devices due to their enhanced interfacial ionic conductivity. This work

  9. Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

    Energy Technology Data Exchange (ETDEWEB)

    Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

    2010-09-01

    Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

  10. The Orange Side of Disperse Red 1: Humidity-Driven Color Switching in Supramolecular Azo-Polymer Materials Based on Reversible Dye Aggregation.

    Science.gov (United States)

    Schoelch, Simon; Vapaavuori, Jaana; Rollet, Frédéric-Guillaume; Barrett, Christopher J

    2017-01-01

    Humidity detection, and the quest for low-cost facile humidity-sensitive indicator materials is of great interest for many fields, including semi-conductor processing, food transport and storage, and pharmaceuticals. Ideal humidity-detection materials for a these applications might be based on simple clear optical readout with no power supply, i.e.: a clear color change observed by the naked eye of any untrained observer, since it doesn't require any extra instrumentation or interpretation. Here, the introduction of a synthesis-free one-step procedure, based on physical mixing of easily available commercial materials, for producing a humidity memory material which can be easily painted onto a wide variety of surfaces and undergoes a remarkable color change (approximately 100 nm blue-shift of λ MAX ) upon exposure to various thresholds of levels of ambient humidity is reported. This strong color change, easily visible to as a red-to-orange color switch, is locked in until inspection, but can then be restored reversibly if desired, after moderate heating. By taking advantage of spontaneously-forming reversible 'soft' supramolecular bonds between a red-colored azo dye and a host polymer matrix, a reversible dye 'migration' aggregation appearing orange, and dis-aggregation back to red can be achieved, to function as the sensor. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Study of dielectric and ferroelectric properties of five-layer Aurivillius ...

    Indian Academy of Sciences (India)

    All three materials show multiple relaxation phenomena and their electrical conductivity was found to be temperature dependent. The Pb2Bi4Ti5O18 ceramic possessed the highest value of activation energy (0.68 eV) and hence shows better ferroelectric properties, as compared to barium and strontium bismuth titanates.

  12. Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications

    CERN Document Server

    Okuyama, Masanori

    2005-01-01

    Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

  13. Magnetic and ferroelectric characteristics of Gd 3 and Ti 4 co-doped ...

    Indian Academy of Sciences (India)

    2016-08-26

    Aug 26, 2016 ... Home; Journals; Bulletin of Materials Science; Volume 39; Issue 2. Magnetic and ferroelectric characteristics of Gd3+ and ... X-ray powder diffraction (XRD) results confirmed the presence of a significant amount of Bi2Fe4O9 impurity phase in the undoped BiFeO3 sample. Mössbauer spectroscopy studies ...

  14. A Review of Polymer-Stabilized Ferroelectric Liquid Crystals

    Directory of Open Access Journals (Sweden)

    Ingo Dierking

    2014-05-01

    Full Text Available The polymer stabilized state of ferroelectric liquid crystals (FLC is reviewed; and the effect of a dispersed polymer network in an FLC outlined and discussed. All fundamental material aspects are demonstrated; such as director tilt angle; spontaneous polarization; response time and viscosity; as well as the dielectric modes. It was found that the data can largely be explained by assuming an elastic interaction between the polymer network strands and the liquid crystal molecules. The elastic interaction parameter was determined; and increases linearly with increasing polymer concentration.

  15. A Review of Polymer-Stabilized Ferroelectric Liquid Crystals

    Science.gov (United States)

    Dierking, Ingo

    2014-01-01

    The polymer stabilized state of ferroelectric liquid crystals (FLC) is reviewed; and the effect of a dispersed polymer network in an FLC outlined and discussed. All fundamental material aspects are demonstrated; such as director tilt angle; spontaneous polarization; response time and viscosity; as well as the dielectric modes. It was found that the data can largely be explained by assuming an elastic interaction between the polymer network strands and the liquid crystal molecules. The elastic interaction parameter was determined; and increases linearly with increasing polymer concentration. PMID:28788637

  16. A Review of Polymer-Stabilized Ferroelectric Liquid Crystals.

    Science.gov (United States)

    Dierking, Ingo

    2014-05-06

    The polymer stabilized state of ferroelectric liquid crystals (FLC) is reviewed; and the effect of a dispersed polymer network in an FLC outlined and discussed. All fundamental material aspects are demonstrated; such as director tilt angle; spontaneous polarization; response time and viscosity; as well as the dielectric modes. It was found that the data can largely be explained by assuming an elastic interaction between the polymer network strands and the liquid crystal molecules. The elastic interaction parameter was determined; and increases linearly with increasing polymer concentration.

  17. Ferroelectric fluoride compositions and methods of making and using same

    Science.gov (United States)

    Halasyamani, P Shiv; Chang, Hong-Young

    2015-04-07

    A method for synthesis of a ferroelectric material characterized by the general formula A.sub.xB.sub.yF.sub.z where A is an alkaline earth metal, B is transition metal or a main group metal, x and y each range from about 1 to about 5, and z ranges from about 1 to about 20 comprising contacting an alkaline earth metal fluoride, a difluorometal compound and a fluoroorganic acid in a medium to form a reaction mixture; and subjecting the reaction mixture to conditions suitable for hydrothermal crystal growth.

  18. Strontium titanate resistance modulation by ferroelectric field effect

    CERN Document Server

    Marré, D; Bellingeri, E; Pallecchi, I; Pellegrino, L; Siri, A S

    2003-01-01

    Among perovskite oxides strontium titanate (STO) SrTiO sub 3 undergoes a metal-insulator transition at very low carrier concentration and exhibits high mobility values at low temperature. We exploited such electrical properties and the structural compatibility of perovskite oxide materials in realizing ferroelectric field effect epitaxial heterostructures. By pulsed laser deposition, we grew patterned field effect devices, consisting of lanthanum doped STO and Pb(Zr,Ti)O sub 3. Such devices showed a resistance modulation up to 20%, consistent with geometrical parameters and carrier concentration of the semiconducting channel.

  19. Synthesis & Studies of New Non-Destructive Read-Out Materials for Optical Storage and Optical Switches

    National Research Council Canada - National Science Library

    Rentzepis, Peter M

    2005-01-01

    .... The optical, chemical and spectroscopic properties of this non-destructive write/read/erase computer memory material have been studied This organic storage system consists of two different molecular...

  20. Unusual Relaxor Ferroelectric Behavior in Stairlike Aurivillius Phases.

    Science.gov (United States)

    Steciuk, Gwladys; Boullay, Philippe; Pautrat, Alain; Barrier, Nicolas; Caignaert, Vincent; Palatinus, Lukas

    2016-09-06

    New ferroelectric layered materials were found in the pseudobinary system Bi5Nb3O15-ABi2Nb2O9 (A= Ba, Sr and Pb). Preliminary observations made by transmission electron microscopy indicate that these compounds exhibit a complex incommensurately modulated structure. A (3 + 1)D structural model is obtained using ab initio phasing by charge flipping based on the analysis of precession electron diffraction tomography data. The (3 + 1)D structure is further validated by a refinement against neutron powder diffraction. These materials possess a layered structure with discontinuous [Bi2O2] slabs and perovskite blocks. While these structural units are characteristics of Aurivillius phases, the existence of periodic crystallographic shear planes offers strong similarities with collapsed or stairlike structures known in high-Tc superconductors and related compounds. Using dielectric spectroscopy, we study the phase transitions of these new layered materials. For A = Ba and Sr, a Vögel-Fulcher-like behavior characteristic of the so-called relaxor ferroelectrics is observed and compared to "canonical" relaxors. For A = Sr, the absence of a Burns temperature separated from the freezing temperature appears as a rather unusual behavior.

  1. Ferroelectric polarization effect on surface chemistry and photo-catalytic activity: A review

    Science.gov (United States)

    Khan, M. A.; Nadeem, M. A.; Idriss, H.

    2016-03-01

    The current efficiency of various photocatalytic processes is limited by the recombination of photogenerated electron-hole pairs in the photocatalyst as well as the back-reaction of intermediate species. This review concentrates on the use of ferroelectric polarization to mitigate electron-hole recombination and back-reactions and therefore improve photochemical reactivity. Ferroelectric materials are considered as wide band gap polarizable semiconductors. Depending on the surface polarization, different regions of the surface experience different extents of band bending and promote different carriers to move to spatially different locations. This can lead to some interesting interactions at the surface such as spatially selective adsorption and surface redox reactions. This introductory review covers the fundamental properties of ferroelectric materials, effect of an internal electric field/polarization on charge carrier separation, effect of the polarization on the surface photochemistry and reviews the work done on the use of these ferroelectric materials for photocatalytic applications such as dye degradation and water splitting. The manipulation of photogenerated charge carriers through an internal electric field/surface polarization is a promising strategy for the design of improved photocatalysts.

  2. Conformal Coating of a Phase Change Material on Ordered Plasmonic Nanorod Arrays for Broadband All-Optical Switching

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Peijun; Weimer, Matthew S. [Department; Emery, Jonathan D.; Diroll, Benjamin T.; Chen, Xinqi; Hock, Adam S. [Department; Chang, Robert P. H.; Martinson, Alex B. F.; Schaller, Richard D.

    2016-12-19

    Actively tunable optical transmission through artificial metamaterials holds great promise for next-generation nanophotonic devices and metasurfaces. Plasmonic nanostructures and phase change materials have been extensively studied to this end due to their respective strong interactions with light and tunable dielectric constants under external stimuli. Seamlessly integrating plasmonic components with phase change materials, as demonstrated in the present work, can facilitate phase change by plasmonically enabled light confinement and meanwhile make use of the high sensitivity of plasmon resonances to the variation of dielectric constant associated with the phase change. The hybrid platform here is composed of plasmonic indium tin-oxide nanorod arrays (ITO-NRAs) conformally coated with an ultrathin layer of a prototypical phase change material, vanadium dioxide (VO2), which enables all-optical modulation of the infrared as well as the visible spectral ranges. The interplay between the intrinsic plasmonic nonlinearity of ITO-NRAs and the phase transition induced permittivity change of VO2 gives rise to spectral and temporal responses that cannot be achieved with individual material components alone.

  3. Conformal Coating of a Phase Change Material on Ordered Plasmonic Nanorod Arrays for Broadband All-Optical Switching.

    Science.gov (United States)

    Guo, Peijun; Weimer, Matthew S; Emery, Jonathan D; Diroll, Benjamin T; Chen, Xinqi; Hock, Adam S; Chang, Robert P H; Martinson, Alex B F; Schaller, Richard D

    2017-01-24

    Actively tunable optical transmission through artificial metamaterials holds great promise for next-generation nanophotonic devices and metasurfaces. Plasmonic nanostructures and phase change materials have been extensively studied to this end due to their respective strong interactions with light and tunable dielectric constants under external stimuli. Seamlessly integrating plasmonic components with phase change materials, as demonstrated in the present work, can facilitate phase change by plasmonically enabled light confinement and meanwhile make use of the high sensitivity of plasmon resonances to the variation of dielectric constant associated with the phase change. The hybrid platform here is composed of plasmonic indium-tin-oxide nanorod arrays (ITO-NRAs) conformally coated with an ultrathin layer of a prototypical phase change material, vanadium dioxide (VO 2 ), which enables all-optical modulation of the infrared as well as the visible spectral ranges. The interplay between the intrinsic plasmonic nonlinearity of ITO-NRAs and the phase transition induced permittivity change of VO 2 gives rise to spectral and temporal responses that cannot be achieved with individual material components alone.

  4. Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

    Science.gov (United States)

    Zhou, Xiaolan

    Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

  5. Origin of Ferrimagnetism and Ferroelectricity in Room-Temperature Multiferroic ɛ -Fe2O3

    Science.gov (United States)

    Xu, K.; Feng, J. S.; Liu, Z. P.; Xiang, H. J.

    2018-04-01

    Exploring and identifying room-temperature multiferroics is critical for developing better nonvolatile random-access memory devices. Recently, ɛ -Fe2O3 was found to be a promising room-temperature multiferroic with a large polarization and magnetization. However, the origin of the multiferroicity in ɛ -Fe2O3 is still puzzling. In this work, we perform density-functional-theory calculations to reveal that the spin frustration between tetrahedral-site Fe3 + spins gives rise to the unexpected ferrimagnetism. For the ferroelectricity, we identify a low-energy polarization switching path with an energy barrier of 85 meV /f .u . by performing a stochastic surface walking simulation. The switching of the ferroelectric polarization is achieved by swapping the tetrahedral Fe ion with the octahedral Fe ion, different from the usual case (e.g., in BaTiO3 and BiFeO3 ) where the coordination number remains unchanged after the switching. Our results not only confirm that ɛ -Fe2O3 is a promising room-temperature multiferroic but also provide guiding principles to design high-performance multiferroics.

  6. Ferroic Materials

    Indian Academy of Sciences (India)

    For many ferro- electrics, this response function becomes particularly large when the material is at or near the temperature of the ferroelectric phase transition. An analogy from sociology may help explain why this should be so. When things are in a state of flux (say, when there a revolution under way, or a war is going on), ...

  7. Ferroelectricity in the multiferroic hexagonal manganites

    Science.gov (United States)

    Lilienblum, Martin; Lottermoser, Thomas; Manz, Sebastian; Selbach, Sverre M.; Cano, Andres; Fiebig, Manfred

    2015-12-01

    Since their discovery in 1963 the hexagonal manganites have consolidated their role as exotic ferroelectrics with astonishing functionalities. Their introduction as room-temperature device ferroelectrics was followed by observations of giant flexoelectricity, multiferroicity with magnetoelectric domain and domain-wall coupling, protected vortex domain structures, topological domain-scaling behaviour and domain walls with tunable conductance and magnetism. Even after half a century, however, the emergence of the ferroelectric state has remained the subject of fierce debate. We resolve the interplay of electric polarization, topological trimerization and temperature by direct access to the polarization for temperatures up to 1,400 K. Nonlinear optical experiments and piezoresponse force microscopy, complemented by Monte Carlo simulations, reveal a single phase transition with ferroelectricity determined by topology rather than electrostatics. Fundamental properties of the hexagonal manganites, including an explanation for the two-phase-transition controversy as a finite-size scaling effect, are derived from this and highlight why improper ferroelectrics are an inherent source of novel functionalities.

  8. Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.

    Science.gov (United States)

    Brown, Emery; Ma, Chunrui; Acharya, Jagaran; Ma, Beihai; Wu, Judy; Li, Jun

    2014-12-24

    The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ∼1200. Cyclic I-V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). The results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. While the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ∼80% to ∼30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

  9. Recyclable calix[4]arene-lanthanoid luminescent hybrid materials with color-tuning and color-switching properties.

    Science.gov (United States)

    Ennis, Brendan W; Muzzioli, Sara; Reid, Brodie L; D'Alessio, Daniel M; Stagni, Stefano; Brown, David H; Ogden, Mark I; Massi, Massimiliano

    2013-05-21

    Inorganic-organic hybrid materials combine the properties of both components providing functionality with a wide range of potential applications. Phase segregation of the inorganic and organic components is a common challenge in these systems, which is overcome here by copolymerizing a metal-free calixarene ionophore and methyl methacrylate. A lanthanoid ion is then added using a swelling-deswelling procedure. The resulting luminescent hybrid materials can be made to emit any required color, including white light, by loading with an appropriate mixture of lanthanoids. The gradation of the emitted color can also be finely adjusted by changing the excitation wavelength. The polymer monolith can be recycled to emit a different color by swelling with a solution containing a different lanthanoid ion. This methodology is flexible and has the potential to be extended to many different ionophores and polymer matrices.

  10. Simulation studies of nucleation of ferroelectric polarization reversal.

    Energy Technology Data Exchange (ETDEWEB)

    Brennecka, Geoffrey L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Winchester, Benjamin Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-08-01

    Electric field-induced reversal of spontaneous polarization is the defining characteristic of a ferroelectric material, but the process(es) and mechanism(s) associated with the initial nucleation of reverse-polarity domains are poorly understood. This report describes studies carried out using phase field modeling of LiTaO3, a relatively simple prototype ferroelectric material, in order to explore the effects of either mechanical deformation or optically-induced free charges on nucleation and resulting domain configuration during field-induced polarization reversal. Conditions were selected to approximate as closely as feasible those of accompanying experimental work in order to provide not only support for the experimental work but also ensure that additional experimental validation of the simulations could be carried out in the future. Phase field simulations strongly support surface mechanical damage/deformation as effective for dramatically reducing the overall coercive field (Ec) via local field enhancements. Further, optically-nucleated polarization reversal appears to occur via stabilization of latent nuclei via the charge screening effects of free charges.

  11. Dimension effect in the layered structures: ferroelectric - normal metal and ferroelectric - HTSC

    International Nuclear Information System (INIS)

    Vendik, O.G.; Ter-Martirosyan, L.T.

    1994-01-01

    Modified form of differential equation describing the dynamic polarization distribution in ferroelectric layer is proposed. Distribution of polarization and electrical field in ferroelectric layer is identified. The expression is obtained for dielectric permittivity for the layer averaged by thickness both in case of normal metal electrodes (zero boundary conditions for polarization) and in case of electrodes of metal-oxide high-temperature super conductor with assumed availability of ferroelectric properties. The dimension effects in the second case seem to be significantly suppressed. 16 refs.; 3 figs

  12. Effects of ferroelectric nanoparticles on ion transport in a liquid crystal

    Science.gov (United States)

    Basu, Rajratan; Garvey, Alfred

    2014-10-01

    A small quantity of BaTiO3 ferroelectric nanoparticles (FNPs) of 50 nm diameter was doped in a nematic liquid crystal (LC), and the free ion concentration was found to be significantly reduced in the LC + FNP hybrid compared to that of the pure LC. The strong electric fields, due to the permanent dipole moment of the FNPs, trapped some mobile ions, reducing the free ion concentration in the LC media. The reduction of free ions was found to have coherent impacts on the LC's conductivity, rotational viscosity, and electric field-induced nematic switching.

  13. Effects of ferroelectric nanoparticles on ion-transport in a liquid crystal

    Science.gov (United States)

    Garvey, Alfred; Basu, Rajratan

    2015-03-01

    A small quantity of BaTiO3 ferroelectric nanoparticles (FNPs) of 50 nm diameter was doped in a nematic liquid crystal (LC), and the free ion concentration was found to be significantly reduced in the LC +FNP hybrid compared to that of the pure LC. The strong electric fields, due to the permanent dipole moment of the FNPs, trapped some mobile ions, reducing the free ion concentration in the LC media. The reduction of free ions was found to have coherent impacts on the LC's conductivity, rotational viscosity, and electric field-induced nematic switching.

  14. Dynamic behaviors of ferroelectric liquid crystal molecules under an applied electric field

    Science.gov (United States)

    Kawaguchi, Masato; Takei, Misaki; Yamashita, Masafumi

    2009-03-01

    The dynamic changes in ferroelectric liquid crystal (FLC) molecular alignments under an applied electric field are examined by observing the formation of conoscopic figures with a time resolution of 0.1 ms. Close agreements between observed and simulated conoscopic figures under low voltage (30 V) were obtained. Under high voltage (120 V), however, the observed conoscopic figures became blurred between 0.8 ms and 1.1 ms after reversal of the electric field. The light scattering producing the blurriness occurred due to the development of fast transient molecular alignments during the switching transition above the applied voltage 70 V.

  15. The impact of etched trenches geometry and dielectric material on the electrical behaviour of silicon-on-insulator self-switching diodes

    Energy Technology Data Exchange (ETDEWEB)

    Farhi, G; Charlebois, S A [Departement de genie electrique et genie informatique, et Institut interdisciplinaire d' innovation technologique (3IT), Universite de Sherbrooke, 2500, Boulevard de l' Universite, J1K 2R1, Sherbrooke, QC (Canada); Morris, D [Departement de physique et Institut interdisciplinaire d' innovation technologique (3IT), Universite de Sherbrooke, 2500, Boulevard de l' Universite, J1K 2R1, Sherbrooke, QC (Canada); Raskin, J-P, E-mail: ghania.farhi@usherbrooke.ca [Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Universite catholique de Louvain, Place du Levant, 3, B-1348 Louvain-la-Neuve (Belgium)

    2011-10-28

    Hole electrical transport in a p-doped nanochannel defined between two L-shape etched trenches made on a silicon-on-insulator substrate is investigated using a TCAD-Medici simulator. We study the impact of the etched trenches' geometry and dielectric filling materials on the current-voltage characteristics of the device. Carrier accumulation on frontiers defined by the trenches causes a modulation of the hole density inside the conduction channel as the bias voltage varies and this gives rise to a diode-like characteristic. For a 1.2 {mu}m-long channel, plots of the electric field distribution show that a nonlinear transport regime is reached at a moderate reverse and forward bias of {+-} 2 V. Plots of the carrier velocity along the conduction channel show that holes remain hot for a few hundreds of nm outside the nanometre-wide channel, at a bias of {+-} 10 V. Filling the etched trenches with a high-{kappa} dielectric material gives rise to a lower threshold voltage, V{sub th}. A similar decrease of V{sub th} is also achieved by reducing the longitudinal and/or the transverse trench width. Our simulation results provide useful design guidelines for future integrated self-switching-diode-based circuits.

  16. Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

    Science.gov (United States)

    Huang, Fei; Chen, Xing; Liang, Xiao; Qin, Jun; Zhang, Yan; Huang, Taixing; Wang, Zhuo; Peng, Bo; Zhou, Peiheng; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Liu, Ming; Liu, Qi; Tian, He; Bi, Lei

    2017-02-01

    Owing to their prominent stability and CMOS compatibility, HfO 2 -based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO 2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

  17. Modeling of rf MEMS switches

    Science.gov (United States)

    Robertson, Barbara; Ho, Fat D.; Hudson, Tracy D.

    2001-10-01

    The microelectromechanical system (MEMS) switch offers many benefits in radio frequency (RF) applications. These benefits include low insertion loss, high quality factor (Q), low power, RF isolation, and low cost. The ability to manufacture mechanical switches on a chip with electronics can lead to higher functionality, such as single-chip arrays, and smart switches. The MEMS switch is also used as a building block in devices such as phase shifters, filters, and switchable antenna elements. The MEMS designer needs models of these basic elements in order to incorporate them into their applications. The objective of this effort is to develop lumped element models for MEMS RF switches, which are incorporated into a CAD software. Tanner Research Inc.'s Electronic Design Automation (EDA) software is being used to develop a suite of mixed-signal RF switch models. The suite will include switches made from cantilever beams and fixed-fixed beams. The switches may be actuated by electrostatic, piezoelectric or electromagnetic forces. The effort presented in this paper concentrates on switches actuated by electrostatic forces. The lumped element models use a current-force electrical-mechanical analogy. Finite element modeling and device testing will be used to verify the Tanner models. The effects of materials, geometries, temperature, fringing fields, and mounting geometries are considered.

  18. Spin-driven ferroelectricity in ferroaxial crystals

    Science.gov (United States)

    Chapon, Laurent

    2012-02-01

    Spin-driven ferroelectricity in most non-collinear magnets, such as TbMnO3, is induced by the so-called inverse Dzyalonshinskii-Moriya mechanism and requires a cycloidal magnetic structure, an ordered magnetic state that is not truly chiral (or lacks helicity). Conversely, in a truly chiral magnetic state (proper helix), the pseudo-scalar helicity can not couple directly to the electric polarization, and therefore can't induce ferroelectric order. However, in systems of specific crystal symmetry, named here ``ferroaxials,'' the presence of collective structural rotations mediates an indirect coupling between magnetic helicity and ferroelectricity. I will review our recent experimental results for new compounds of this class, obtained by magnetic X-ray and neutron diffraction techniques, including a clear demonstration that the magnetic helicity can be controlled by an electric field.

  19. Flexoelectricity: strain gradient effects in ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Ma Wenhui [Department of Physics, Shantou Unversity, Shantou, Guangdong 515063 (China)

    2007-12-15

    Mechanical strain gradient induced polarization effect or flexoelectricity in perovskite-type ferroelectric and relaxor ferroelectric ceramics was investigated. The flexoelectric coefficients measured at room temperature ranged from about 1 {mu} C m{sup -1} for lead zirconate titanate to 100 {mu} C m{sup -1} for barium strontium titanate. Flexoelectric effects were discovered to be sensitive to chemical makeup, phase symmetry, and domain structures. Based on phenomenological discussion and experimental data on flexoelectricity, the present study proposed that mechanical strain gradient field could influence polarization responses in a way analogous to electric field. Flexoelectric coefficients were found to be nonlinearly enhanced by dielectric permittivity and strain gradient. Interfacial mismatch in epitaxial thin films can give rise to high strain gradients, enabling flexoelectric effects to make a significant impact in properly engineered ferroelectric heterostructure systems.

  20. Flexoelectricity: strain gradient effects in ferroelectrics

    International Nuclear Information System (INIS)

    Ma Wenhui

    2007-01-01

    Mechanical strain gradient induced polarization effect or flexoelectricity in perovskite-type ferroelectric and relaxor ferroelectric ceramics was investigated. The flexoelectric coefficients measured at room temperature ranged from about 1 μ C m -1 for lead zirconate titanate to 100 μ C m -1 for barium strontium titanate. Flexoelectric effects were discovered to be sensitive to chemical makeup, phase symmetry, and domain structures. Based on phenomenological discussion and experimental data on flexoelectricity, the present study proposed that mechanical strain gradient field could influence polarization responses in a way analogous to electric field. Flexoelectric coefficients were found to be nonlinearly enhanced by dielectric permittivity and strain gradient. Interfacial mismatch in epitaxial thin films can give rise to high strain gradients, enabling flexoelectric effects to make a significant impact in properly engineered ferroelectric heterostructure systems

  1. Dynamic strain-induced giant electroresistance and erasing effect in ultrathin ferroelectric tunnel-junction memory

    Science.gov (United States)

    Yau, Hei-Man; Xi, Zhongnan; Chen, Xinxin; Wen, Zheng; Wu, Ge; Dai, Ji-Yan

    2017-06-01

    Strain engineering plays a critical role in ferroelectric memories. In this work, we demonstrate dynamic strain modulation on tunneling electroresistance in a four-unit-cell ultrathin BaTi O3 metal/ferroelectric/semiconductor tunnel junction by applying mechanical stress to the device. With an extra compressive strain induced by mechanical stress, which is dynamically applied beyond the lattice mismatch between the BaTi O3 layer and the Nb :SrTi O3 substrate, the ON/OFF current ratio increases significantly up to a record high value of 107, whereas a mechanical erasing effect can be observed when a tensile stress is applied. This dynamic strain engineering gives rise to an efficient modulation of ON/OFF ratio due to the variation of BaTi O3 polarization. This result sheds light on the mechanism of electroresistance in the ferroelectric tunnel junctions by providing direct evidence for polarization-induced resistive switching, and also provides another stimulus for memory state operation.

  2. Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

    International Nuclear Information System (INIS)

    Misirlioglu, I B; Yildiz, M

    2013-01-01

    We study the effect of full and partial depletion on the dielectric response characteristics of ferroelectric thin films with impurities via a computational approach. Using a thermodynamic approach along with the fundamental equations for semiconductors, we show that films with partial depletion display unique features and an enhanced dielectric response compared with those fully depleted. We find that the capacitance peak at switching can be significantly suppressed in the case of high impurity densities (>10 25 m −3 ) with relatively low ionization energy, of the order of 0.5 eV. For conserved number of species in films, electromigration of ionized impurities at room temperature is negligible and has nearly no effect on the dielectric response. In films with high impurity density, the dielectric response at zero bias is enhanced with respect to charge-free films or those with relatively low impurity density ( 24 m −3 ). We demonstrate that partially depleted films should be expected to exhibit peculiar capacitance–voltage characteristics at low and high bias and that the thickness effect probed in experiments in ferroelectric thin films could be entirely inverted in thin films with depletion charges where a higher dielectric response can be measured in thicker films. Therefore, depletion charge densities in ferroelectric thin films should be estimated before size-effect-related studies. Finally, we noted that these findings are in good qualitative agreement with dielectric measurements carried out on PbZr x Ti 1−x O 3 . (paper)

  3. Ferroelectric Cathodes in Transverse Magnetic Fields

    International Nuclear Information System (INIS)

    Alexander Dunaevsky; Yevgeny Raitses; Nathaniel J. Fisch

    2002-01-01

    Experimental investigations of a planar ferroelectric cathode in a transverse magnetic field up to 3 kGs are presented. It is shown that the transverse magnetic field affects differently the operation of ferroelectric plasma cathodes in ''bright'' and ''dark'' modes in vacuum. In the ''bright'' mode, when the surface plasma is formed, the application of the transverse magnetic field leads to an increase of the surface plasma density. In the ''dark'' mode, the magnetic field inhibits the development of electron avalanches along the surface, as it does similarly in other kinds of surface discharges in the pre-breakdown mode

  4. Role of the dielectric constant of ferroelectric ceramic in enhancing the ionic conductivity of a polymer electrolyte composite

    OpenAIRE

    Singh, Pramod Kumar; Chandra, Amreesh

    2003-01-01

    The dispersal of high dielectric constant ferroelectric ceramic material Ba(0.7)Sr(0.3)TiO(3) (Tc~30 C) and Ba(0.88)Sr(0.12)TiO(3) (Tc~90 C) in an ion conducting polymer electrolyte (PEO:NH4I) is reported to result in an increase in the room temperature ionic conductivity by two orders of magnitude. The conductivity enhancememt "peaks" as we approach the dielectric phase transition of the dispersed ferroelectric material where the dielectric constant changes from ~ 2000 to 4000. This establis...

  5. Designer thermal switches: the effect of the contact material on instantaneous thermoelectric transport through a strongly interacting quantum dot

    Science.gov (United States)

    Goker, A.; Gedik, E.

    2013-09-01

    We investigate the effect of contact material on the instantaneous thermoelectric response of a quantum dot pushed suddenly into the Kondo regime via a gate voltage using time dependent non-crossing approximation and linear response Onsager relations. We utilize graphene and metal contacts for this purpose. Instantaneous thermopower displays sinusoidal oscillations whose frequency is proportional to the energy separation between the van Hove singularity in the contact density of states and the Fermi level for both cases, regardless of the asymmetry factor at the onset of the Kondo timescale. The amplitude of the oscillations increases with decreasing temperature, saturating around the Kondo temperature. We also calculate the instantaneous figure of merit and show that the oscillations taking place at temperatures above the Kondo temperature are enhanced more than the ones occurring at lower temperatures due to the violation of the Wiedemann-Franz law. Graphene emerges as a more promising electrode candidate than ordinary metals in single electron devices since it can minimize these oscillations.

  6. Room-temperature relaxor ferroelectricity and photovoltaic effects in tin titanate directly deposited on a silicon substrate

    Science.gov (United States)

    Agarwal, Radhe; Sharma, Yogesh; Chang, Siliang; Pitike, Krishna C.; Sohn, Changhee; Nakhmanson, Serge M.; Takoudis, Christos G.; Lee, Ho Nyung; Tonelli, Rachel; Gardner, Jonathan; Scott, James F.; Katiyar, Ram S.; Hong, Seungbum

    2018-02-01

    Tin titanate (SnTi O3 ) has been notoriously impossible to prepare as a thin-film ferroelectric, probably because high-temperature annealing converts much of the S n2 + to S n4 + . In the present paper, we show two things: first, perovskite phase SnTi O3 can be prepared by atomic-layer deposition directly onto p -type Si substrates; and second, these films exhibit ferroelectric switching at room temperature, with p -type Si acting as electrodes. X-ray diffraction measurements reveal that the film is single-phase, preferred-orientation ferroelectric perovskite SnTi O3 . Our films showed well-saturated, square, and repeatable hysteresis loops of around 3 μ C /c m2 remnant polarization at room temperature, as detected by out-of-plane polarization versus electric field and field cycling measurements. Furthermore, photovoltaic and photoferroelectricity were found in Pt /SnTi O3/Si /SnTi O3/Pt heterostructures, the properties of which can be tuned through band-gap engineering by strain according to first-principles calculations. This is a lead-free room-temperature ferroelectric oxide of potential device application.

  7. Improved ferroelectric property and domain structure of highly a-oriented polycrystalline CaBi2Nb2O9 thin film

    Science.gov (United States)

    Ahn, Yoonho; Son, Jong Yeog

    2015-12-01

    A Lead-free ferroelectric CaBi2Nb2O9 (CBNO) thin film was deposited on Si substrate by pulsed laser deposition. TiO2 buffer layer was employed and Pt electrode was used for nano-scale capacitor. The x-ray diffraction reveals that the CBNO thin film has highly a-oriented polycrystalline structure. The highly a-oriented polycrystalline CBNO thin film significantly exhibit the enhanced ferroelectric property with a remnant polarization of 10 μC/cm2 compared to other values reported previously. In particular, the highly a-oriented polycrystalline CBNO thin film show faster ferroelectric switching characteristics than the epitaxially c-oriented CBNO thin film.

  8. Are lithium niobate (LiNbO{sub 3}) and lithium tantalate (LiTaO{sub 3}) ferroelectrics bioactive?

    Energy Technology Data Exchange (ETDEWEB)

    Vilarinho, Paula Maria, E-mail: paula.vilarinho@ua.pt; Barroca, Nathalie; Zlotnik, Sebastian; Félix, Pedro; Fernandes, Maria Helena

    2014-06-01

    The use of functional materials, such as ferroelectrics, as platforms for tissue growth in situ or ex situ, is new and holds great promise. But the usage of materials in any bioapplication requires information on biocompatibility and desirably on bioactive behavior when bone tissue engineering is envisaged. Both requirements are currently unknown for many ferroelectrics. Herein the bioactivity of LiNbO{sub 3} and LiTaO{sub 3} is reported. The formation of apatite-like structures on the surface of LiNbO{sub 3} and LiTaO{sub 3} powders after immersion in simulated body fluid (SBF) for different soaking periods indicates their bioactive potential. The mechanism of apatite formation is suggested. In addition, the significant release of lithium ions from the ferroelectric powders in the very first minutes of soaking in SBF is examined and ways to overcome this likely hurdle addressed. - Highlights: • LiNbO{sub 3} and LiTaO{sub 3} are bioactive ferroelectrics. • Cauliflower apatite type structures indicative of in-vitro bioactivity of LiNbO{sub 3} and LiTaO{sub 3.} • Negative surface charges anchor Ca{sup 2+} to which PO{sub 4}{sup 3−} attracts forming apatite structure nuclei. • Use of ferroelectrics as platforms for tissue growth in situ or ex situ is new and holds great promise.

  9. Er^3+ Materials for All-Optical Switching and Routing at 1.5 μm

    Science.gov (United States)

    Sun, Y.; Cone, R. L.; Harris, T. L.; Macfarlane, R. M.; Equall, R. E.

    1998-03-01

    Optical dephasing and spectral diffusion for the ^4I_15/2 rightarrow ^4I_13/2 transition of Er^3+ at 1.5 μm in crystals of Y_2SiO_5, Y_2O_3, LiNbO_3, YAG, YAlO_3, CaWO_4, and SrWO4 were investigated using photon echoes and stimulated photon echoes. Er was doped at very low concentration ( ~10 ppm) to minimize dephasing and spectral diffusion by Er-Er mutual spin flips. A homogeneous linewidth Γ_h ~150 Hz was measured in 0.001%Er^3+:Y_2SiO5 at 80 kG and 1.5K; button-sized Nd-Fe-B magnets provided 2.5 kG and Γ_h ~2.5kHz. For 0.005%Er^3+:Y_2O3 at zero magnetic field, strong echoes, 3% as intense as the exciting laser pulse, and T_2 ~9μs were observed. In 0.06%Er^3+:LiNbO_3, inhomogeneous linewidth Γ_inh= 250 GHz and Γ_h=4 kHz at 5kG make this an interesting material for spatial-spectral holographic applications, where Γ_inh/Γh is important. In YAG, YAlO_3, CaWO_4, and SrWO_4, lengthening of T2 to ~200μs with applied field saturates at ~35kG. Dephasing and spectral diffusion mechanisms will be discussed.

  10. Impact of interface layer and metal workfunction on device performance of ferroelectric junctionless cylindrical surrounding gate transistors

    Science.gov (United States)

    Mehta, Hema; Kaur, Harsupreet

    2017-11-01

    In this work, the negative capacitance phenomenon exhibited by ferroelectric materials has been incorporated in Junctionless Cylindrical Surrounding Gate (JLCSG) transistor and an analytical model has been developed to study the electrical characteristics of the device by taking into account Landau Khalatnikov equation along with parabolic potential approximation. Using the derived model various electrical parameters such as potential, gain, drain current, gate capacitance etc have been obtained. Silicon doped hafnium oxide has been incorporated as the ferroelectric material and exhaustive study has been done to study the impact of interfacial layer and metal workfunction on device characteristics as these have significant impact on the performance of Junctionless devices. It has been demonstrated by analytical model and TCAD simulations that by incorporating ferroelectric layer and optimizing metal work function and interfacial layer thickness, the device performance of JLCSG can be substantially improved.

  11. First-principles-based Landau energy functionals for perovskite ferroelectrics

    Science.gov (United States)

    Pitike, Krishna Chaitanya; Gadigi, Neha; Mangeri, John; Cooper, Valentino; Nakhmanson, Serge

    ABO3 perovskite-oxide ferroelectrics are well known for their useful functional properties. These materials, as well as their solid solutions, exhibit rich phase diagrams that can be exploited, e.g., to obtain large piezoelectric and dielectric responses. Mesoscale-level investigations of their behavior usually utilize Landau phenomenological theory, where the system energy functional is represented by a polynomial expansion in powers of polarization and strain that is parameterized from experimental data. In this project, we present an approach for fitting the Landau functionals for perovskite ferroelectrics directly from first principles simulations with the help of statistical and machine learning tools. Initial data sets are created by computing the energies for a wide range of possible structural configurations involving polar and elastic distortions with standard density-functional theory (DFT) codes. A small fraction of this data is then processed by supervised machine learning algorithms to train a Landau-style polynomial model that can predict the system energies to within 20 meV of the DFT results. KCP and SMN are thankful to the NSF (DMR 1309114) for partial funding. KCP also acknowledges the support from the ASTRO program at ORNL. VRC was supported by the U.S. DOE, MSED and the Office of Science Early Career Research Program.

  12. Discriminator Stabilized Superconductor/Ferroelectric Thin Film Local Oscillator

    Science.gov (United States)

    Romanofsky, Robert R. (Inventor); Miranda, Felix A. (Inventor)

    2000-01-01

    A tunable local oscillator with a tunable circuit that includes a resonator and a transistor as an active element for oscillation. Tuning of the circuit is achieved with an externally applied dc bias across coupled lines on the resonator. Preferably the resonator is a high temperature superconductor microstrip ring resonator with integral coupled lines formed over a thin film ferroelectric material. A directional coupler samples the output of the oscillator which is fed into a diplexer for determining whether the oscillator is performing at a desired frequency. The high-pass and lowpass outputs of the diplexer are connected to diodes respectively for inputting the sampled signals into a differential operational amplifier. The amplifier compares the sampled signals and emits an output signal if there is a difference between the resonant and crossover frequencies. Based on the sampled signal, a bias supplied to the ring resonator is either increased or decreased for raising or lowering the resonant frequency by decreasing or increasing, respectively, the dielectric constant of the ferroelectric.

  13. Characterization of current transport in ferroelectric polymer devices

    KAUST Repository

    Hanna, Amir

    2014-01-01

    We report the charge injection characteristics in poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), as a function of electrode material in metal/ferroelectric/metal device structures. Symmetric and asymmetric devices with Al, Ag, Au and Pt electrodes were fabricated to determine the dominant carrier type, injection current density, and to propose transport mechanisms in the ferroelectric polymer. Higher work function metals such as Pt are found to inject less charges compared to lower work function metals, implying n-type conduction behavior for P(VDF-TrFE) with electrons as the dominant injected carrier. Two distinct charge transport regimes were identified in the P(VDF-TrFE) devices; a Schottky-limited conduction regime for low to intermediate fields (E < 20 MV/m), and a space-charge limited conduction (SCLC) regime for high fields (20 < E < 120 MV/m). Implication of these results for degradation in P(VDF-TrFE) memory performance are discussed. © 2013 Elsevier B.V. All rights reserved.

  14. Origin of stationary domain wall enhanced ferroelectric susceptibility

    Science.gov (United States)

    Liu, Shi; Cohen, R. E.

    2017-03-01

    Ferroelectrics usually adopt a multidomain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric materials. The enhancement of low-field susceptibility/permittivity under subswitching conditions is usually attributed to reversible domain wall vibration. Recent experiments highlight the stationary domain wall contribution to the dielectric susceptibility irrespective of any lateral displacements or deformations of the wall. We study the effects of domain walls on the low-field permittivity of PbTiO3 with density functional theory and molecular dynamics simulations. The static dielectric constant is calculated as a function of increasing domain wall density and temperature. We find an increase of dielectric permittivity with increasing domain wall density, which is expected to occur at a low driving field where the lateral motion of domain walls is forbidden. Real-space decomposition of the dielectric response reveals that frustrated dipoles within the finite width of the domain walls are responsible for the enhanced low-field permittivity. We explain the 100 % enhancement of the dielectric susceptibility form domain walls, which arises from the softer potential wells within them.

  15. Laser activated superconducting switch

    International Nuclear Information System (INIS)

    Wolf, A.A.

    1976-01-01

    A superconducting switch or bistable device is described consisting of a superconductor in a cryogen maintaining a temperature just below the transition temperature, having a window of the proper optical frequency band for passing a laser beam which may impinge on the superconductor when desired. The frequency of the laser is equal to or greater than the optical absorption frequency of the superconducting material and is consistent with the ratio of the gap energy of the switch material to Planck's constant, to cause depairing of electrons, and thereby normalize the superconductor. Some embodiments comprise first and second superconducting metals. Other embodiments feature the two superconducting metals separated by a thin film insulator through which the superconducting electrons tunnel during superconductivity

  16. Analysis of the Measurement and Modeling of a Digital Inverter Based on a Ferroelectric Transistor

    Science.gov (United States)

    MacLeod, Todd C.; Phillips, Thomas A.; Sayyah, Rana; Ho, Fat D.

    2009-01-01

    The use of ferroelectric materials for digital memory devices is widely researched and implemented, but ferroelectric devices also possess unique characteristics that make them have interesting and useful properties in digital circuits. Because ferroelectric transistors possess the properties of hysteresis and nonlinearity, a digital inverter containing a FeFET has very different characteristics than one with a traditional FET. This paper characterizes the properties of the measurement and modeling of a FeFET based digital inverter. The circuit was set up using discrete FeFETs. The purpose of this circuit was not to produce a practical integrated circuit that could be inserted directly into existing digital circuits, but to explore the properties and characteristics of such a device and to look at possible future uses. Input and output characteristics are presented, as well as timing measurements. Comparisons are made between the ferroelectric device and the properties of a standard digital inverter. Potential benefits and possible uses of such a device are presented.

  17. Ab initio study on mechanical-bending-induced ferroelectric phase transition in ultrathin perovskite nanobelts

    International Nuclear Information System (INIS)

    Li, H.F.; Zhang, G.H.; Zheng, Yue; Wang, Biao; Chen, W.J.

    2014-01-01

    Based on first-principles calculations, we systematically investigated the structural, ferroelectric (FE), energetic and electronic properties of bended ultrathin PbTiO 3 and BaTiO 3 nanobelts in between flat sheet and nanotube configurations. It is found that both PbTiO 3 and BaTiO 3 ultrathin nanobelts can possess axial antiferrodistortive structural distortion (AFD distortion), and the magnitude of the AFD rotation angle is obviously determined by the bending curvature of the nanobelts. Meanwhile, spontaneous polarization can be retained in these single-unit-cell-thick nanobelts with contributions from the axial improper ferroelectricity and the radial flexoelectricity, which indicates that ultrathin perovskite nanobelts do not have a critical thickness. On the other hand, we found that the AFD distortion is stable and significant in PbTiO 3 nanobelts while it is metastable in BaTiO 3 nanobelts in comparison with the stable non-AFD structure without AFD distortion. This is due to the competition between AFD distortion and circumferential lattice extension in releasing the elastic energy in BaTiO 3 material. Moreover, we found that the electronic structure and bandgap of the nanobelts can be tuned by the bending curvature, indicating potential control of transport properties by mechanical bending. Our results gave more insight into the inherence of improper ferroelectricity in low-dimensional perovskite ferroelectrics

  18. Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

    Science.gov (United States)

    Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Ota, Hiroyuki; Migita, Shinji; Asai, Hidehiro; Toriumi, Akira

    2018-04-01

    We study the effects of fringing electric fields on the behavior of negative-capacitance (NC) field-effect transistors (FETs) with a silicon-on-insulator body and a gate stack consisting of an oxide film, an internal metal film, a ferroelectric film, and a gate electrode using our own device simulator that can properly handle the complicated relationship between the polarization and the electric field in ferroelectric materials. The behaviors of such NC FETs and the corresponding metal-oxide-semiconductor (MOS) FETs are simulated and compared with each other to evaluate the effects of the NC of the ferroelectric film. Then, the fringing field effects are evaluated by comparing the NC effects in NC FETs with and without gate spacers. The fringing field between the gate stack, especially the internal metal film, and the source/drain region induces more charges at the interface of the film with the ferroelectric film. Accordingly, the function of the NC to modulate the gate voltage and the resulting function to improve the subthreshold swing are enhanced. We also investigate the relationships of these fringing field effects to the drain voltage and four design parameters of NC FETs, i.e., gate length, gate spacer permittivity, internal metal film thickness, and oxide film thickness.

  19. Distribution of correlation radii in disordered ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Glinchuk, M. D.; Eliseev, E. A.; Stepanovich, V. A.; Jastrabík, Lubomír

    2002-01-01

    Roč. 81, č. 25 (2002), s. 4808-4810 ISSN 0003-6951 R&D Projects: GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : disordered ferroelectrics * distribution of correlation radii * polar nanoregions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.207, year: 2002

  20. Organic nonvolatile memory devices based on ferroelectricity

    NARCIS (Netherlands)

    Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  1. Organic ferroelectric opto-electronic memories

    NARCIS (Netherlands)

    Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

    2011-01-01

    Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this

  2. Pyroelectric Ferroelectric and Resistivity Studies on Samarium ...

    African Journals Online (AJOL)

    Barium Strontium Sodium Niobate (Ba1-xSrx)2NaNb5O15 (BSNN) belongs to tungsten bronze ferroelectric morphotrophic phase boundary (MPB) system at x = 0.6, having large spontaneous polarisation, pyroelectric coefficient and low dielectic constant and is expected to be applicable for piezoceramic filter and ...

  3. Switching of a spin-spiral-induced polarization in multiferroic MnWO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Tim; Meier, Dennis; Fiebig, Manfred [HISKP, Universitaet Bonn (Germany); Becker-Bohaty, Petra; Bohaty, Ladislav [Institut fuer Kristallographie, Universitaet zu Koeln (Germany)

    2010-07-01

    Coexisting ferroic orders become interesting when there is an interaction between them. Especially applying an electric field and thus changing the magnetic order is highly desirable for possible applications. In spite of the declared interest in multiferroics to switch a magnetization by an electric field nothing is known about the dynamics of the actual switching process. The coupling of ferroelectric and magnetic order is intrinsically strong in spin-spiral multiferroics, where ferroelectricity emerges as a consequence of complex magnetic long-range order. Here we observe the manipulation of magnetically-induced ferroelectric domains in MnWO{sub 4} by optical second harmonic generation (SHG). Application of an electric field allows to transform the sample to an electric as well as magnetic single-domain state. Moreover we obtained images of the domain structures during the transition revealing the growth of the domains. When cooled in zero-field, the domains have a bubble-like topology. Interestingly, after recovery from a single domain state the shape changes to a stripe structure and the domain size is significantly increased. Effects of the shape and duration of the electric-field poling pulses are investigated. Furthermore, in contrast to typical ionic ferroelectrics the spontaneous polarization can be switched without fatigue - no defects or pinning effects constrain the movement of domain walls.

  4. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science. HUA WANG. Articles written in Bulletin of Materials Science. Volume 36 Issue 3 June 2013 pp 389-393. Effects of Bi doping on dielectric and ferroelectric properties of PLBZT ferroelectric thin films synthesized by sol–gel processing · Hua Wang Li Liu Ji-Wen Xu Chang-Lai Yuan ...

  5. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science. LING YANG. Articles written in Bulletin of Materials Science. Volume 36 Issue 3 June 2013 pp 389-393. Effects of Bi doping on dielectric and ferroelectric properties of PLBZT ferroelectric thin films synthesized by sol–gel processing · Hua Wang Li Liu Ji-Wen Xu Chang-Lai Yuan ...

  6. Speed up Ferroelectric Organic Transistor Memories by Using Two-Dimensional Molecular Crystalline Semiconductors.

    Science.gov (United States)

    Song, Lei; Wang, Yu; Gao, Qian; Guo, Yu; Wang, Qijing; Qian, Jun; Jiang, Sai; Wu, Bing; Wang, Xinran; Shi, Yi; Zheng, Youdou; Li, Yun

    2017-05-31

    Ferroelectric organic field-effect transistors (Fe-OFETs) have attracted intensive attention because of their promising potential in nonvolatile memory devices. The quick switching between binary states is a significant fundamental feature in evaluating Fe-OFET memories. Here, we employ 2D molecular crystals via a solution-based process as the conducting channels in transistor devices, in which ferroelectric polymer acts as the gate dielectric. A high carrier mobility of up to 5.6 cm 2 V -1 s -1 and a high on/off ratio of 10 6 are obtained. In addition, the efficient charge injection by virtue of the ultrathin 2D molecular crystals is beneficial in achieving rapid operations in the Fe-OFETs; devices exhibit short switching time of ∼2.9 and ∼3.0 ms from the on- to the off-state and from the off- to the on-state, respectively. Consequently, the presented strategy is capable of speeding up Fe-OFET memory devices by using solution-processed 2D molecular crystals.

  7. A physics-based compact model of ferroelectric tunnel junction for memory and logic design

    International Nuclear Information System (INIS)

    Wang, Zhaohao; Zhao, Weisheng; Kang, Wang; Bouchenak-Khelladi, Anes; Zhang, Yue; Klein, Jacques-Olivier; Ravelosona, Dafiné; Chappert, Claude; Zhang, Youguang

    2014-01-01

    Ferroelectric tunnel junction (FTJ) is able to store non-volatile data in the spontaneous polarization direction of ferroelectric tunnel barrier. Recent progress has demonstrated its great potential to build up the next generation non-volatile memory and logic (NVM and NVL) thanks to the high OFF/ON resistance ratio, fast operation speed, low write power, non-destructive readout and so on. In this paper, we present the first physics-based compact model for Co/BTO/LSMO FTJ nanopillar, which was reported experimentally to exhibit excellent NVM performance. This model integrates related physical models of tunnel resistance, static switching voltage and dynamic switching delay. Its accuracy is shown by the good agreement between numerical model simulation and experimental measurements. This compact model has been developed in Verilog-A language and validated by single-cell simulation on Cadence Virtuoso Platform. Hybrid simulations based on 40 nm-technology node of FTJ memory arrays and non-volatile full adder were performed to demonstrate the efficiency of our compact model for the simulation and analysis of CMOS/FTJ integrated circuits. (paper)

  8. Model of two-dimensional electron gas formation at ferroelectric interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Aguado-Puente, P.; Bristowe, N. C.; Yin, B.; Shirasawa, R.; Ghosez, Philippe; Littlewood, P. B.; Artacho, Emilio

    2015-07-01

    The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here, we study under what circumstances similar processes can also take place underneath ferroelectric thin films. We use a simple Landau model to demonstrate that in the absence of extrinsic screening mechanisms, a monodomain phase can be stabilized in ferroelectric films by means of an electronic reconstruction. Unlike in the LaAlO3/SrTiO3 heterostructure, the emergence with thickness of the free charge at the interface is discontinuous. This prediction is confirmed by performing first-principles simulations of free-standing slabs of PbTiO3. The model is also used to predict the response of the system to an applied electric field, demonstrating that the two-dimensional electron gas can be switched on and off discontinuously and in a nonvolatile fashion. Furthermore, the reversal of the polarization can be used to switch between a two-dimensional electron gas and a two-dimensional hole gas, which should, in principle, have very different transport properties. We discuss the possible formation of polarization domains and how such configuration competes with the spontaneous accumulation of free charge at the interfaces.

  9. A physics-based compact model of ferroelectric tunnel junction for memory and logic design

    Science.gov (United States)

    Wang, Zhaohao; Zhao, Weisheng; Kang, Wang; Bouchenak-Khelladi, Anes; Zhang, Yue; Zhang, Youguang; Klein, Jacques-Olivier; Ravelosona, Dafiné; Chappert, Claude

    2014-01-01

    Ferroelectric tunnel junction (FTJ) is able to store non-volatile data in the spontaneous polarization direction of ferroelectric tunnel barrier. Recent progress has demonstrated its great potential to build up the next generation non-volatile memory and logic (NVM and NVL) thanks to the high OFF/ON resistance ratio, fast operation speed, low write power, non-destructive readout and so on. In this paper, we present the first physics-based compact model for Co/BTO/LSMO FTJ nanopillar, which was reported experimentally to exhibit excellent NVM performance. This model integrates related physical models of tunnel resistance, static switching voltage and dynamic switching delay. Its accuracy is shown by the good agreement between numerical model simulation and experimental measurements. This compact model has been developed in Verilog-A language and validated by single-cell simulation on Cadence Virtuoso Platform. Hybrid simulations based on 40 nm-technology node of FTJ memory arrays and non-volatile full adder were performed to demonstrate the efficiency of our compact model for the simulation and analysis of CMOS/FTJ integrated circuits.

  10. Ferroelectric BaTiO3 thin films on Ti substrate fabricated using pulsed-laser deposition.

    Science.gov (United States)

    He, J; Jiang, J C; Liu, J; Collins, G; Chen, C L; Lin, B; Giurgiutiu, V; Guo, R Y; Bhalla, A; Meletis, E I

    2010-09-01

    We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.

  11. Materiais cerâmicos ferroelétricos como hospedeiros para íons laser ativos: características estruturais, microestruturais e espectroscópicas Ferroelectric ceramic materials as hosts of laser active ions: structural, microstructural and spectroscopic characteristics

    Directory of Open Access Journals (Sweden)

    A. S. S. de Camargo

    2004-12-01

    Full Text Available Cerâmicas ferroelétricas transparentes de titanato zirconato de chumbo modificado com lantânio (PLZT, com La/Zr/Ti=9/65/35 e dopadas com íons terras raras (TR = Nd3+, Er3+, Yb3+, Tm3+ e Ho3+ foram preparadas por prensagem uniaxial a quente com o objetivo de investigar a sua qualificação como materiais laser ativos. Com este propósito foram feitas caracterizações estruturais, microestruturais, elétricas e espectroscópicas. Para a dopagem com 1% em peso de óxido TR2O3, verificou-se uma forte influência do tipo de íon terra rara nas características ferroelétricas e óticas do material hospedeiro. Observou-se ainda que a incorporação de Nd3+ nos sítios de Pb2+/La3+ reduziu a temperatura de transição ferro-paraelétrica e favoreceu significativamente a transparência dos corpos cerâmicos. Medidas de espectroscopia ótica revelaram a potencialidade do PLZT: Nd3+ como um meio ativo para a construção de lasers bombeados por lasers de diodo, na região do infravermelho próximo. Os sistemas PLZT:Er3+ e PLZT:Tm3+ poderão também se tornar materiais interessantes para esse fim.In this work, transparent ferroelectric ceramics of lanthanum modified lead zirconate titanate (PLZT, with La/Zr/Ti=9/65/35, doped with rare-earth ions (RE = Nd3+, Er3+, Yb3+ Tm3+ and Ho3+, were processed by hot uniaxial pressing aiming the investigation of their potentiality as near-infrared laser active media. Their structural, microstructural, electric and spectroscopic characterizations were performed. For 1.0 wt.% RE2O3 doping, a strong influence of the rare-earth type was verified in the PLZT ferroelectric and optical characteristics. It was also observed that the Nd3+ substitution for Pb2+/La3+ reduces the ferro-paraelectric phase transition temperature and favors the transparency of the ceramic bodies. Spectroscopic analysis indicates that PLZT:Nd3+ is a potential diode-pumped laser active media in the near infrared region, and with some improvements

  12. Modeling of Structure Effect for Ferroelectric Capacitor Based on Poly(vinylidene fluoride-trifluoroethylene Ultrathin Films

    Directory of Open Access Journals (Sweden)

    Long Li

    2017-12-01

    Full Text Available The characteristics of ferroelectric capacitors with poly(vinylidene fluoride-trifluoroethlene (P(VDF-TrFE films have been studied at different structures of cell electrodes. It is suggested that the effect of electrode structures could induce changes of performance. Remarkably, cells with line electrodes display a better polarization and fatigue resistance than those with flat electrodes. For P(VDF-TrFE ultrathin films with different electrode structures, the models of charge compensation mechanism for depolarization field and domain fatigue decomposition are used to explain the effect of electrode structure. Furthermore, the driving voltage based on normal speed-functionality is designed, and the testing results show that the line electrode structure could induce a robust switching, which is determined by the free charges concentration in active layer. These findings provide an effective route to design the optimum structure for a ferroelectric capacitor based on P(VDF-TrFE copolymer ultrathin film.

  13. Bending-Induced Giant Polarization in Ferroelectric MEMS Diaphragm

    KAUST Repository

    Wang, Zhihong

    2016-09-09

    The polarization induced by the strain gradient, i.e. the flexoelectric effect, has been observed in a micromachined Pb(Zr0.52Ti0.48)O3 (PZT) diaphragms. Applying air pressure to bend a flat diaphragm which initially does not exhibit any electromechanical coupling can induce a resonance peak in its impedance spectrum. This result supposes that bending, thus the strain gradient in the diaphragm causes polarization in PZT film. We also investigated the switching behaviors of the polarization in response to an external electric field in a bent diaphragm and further quantified the polarization induced by the strain gradient. The effective flexoelectric coefficient of the PZT film has been calculated as large as 2.0 × 10−4 C/m. A giant flexoelectric polarization of the order of 1 μC/cm2 was characterized which is of the same order of magnitude as the normal remnant ferroelectric polarization of PZT film. The suggested explanation for the giant polarization is the large strain gradient in the diaphragm and the strain gradient induced reorientation of the polar nanodomains.

  14. Composition, ferroelectric and antiferroelectric ordering in Pb2InNbO6 crystals

    International Nuclear Information System (INIS)

    Bokov, A.A.; Raevskij, I.P.; Smotrakov, V.G.

    1984-01-01

    Effect of thermal treatment on temperatures of phase transitions and electrical properties has been studied in Pb 2 InNbO 6 crystals with the high-temperature phase transition of the order-disorder type in In and Nb cations disposition in crystallographic positions. The order-disorder transition temperature (Tsub(t) approximately 1020 deg C) has been directly determined for the first time using the method of electric conductivity investigation. It has been shown that Pb 2 InNbO 6 in the ordered state represents the antiferroelectric material with the Curie point of 195 deg C, and it represents the ferroelectric material with a smeared transition to the paraelectric phase in the temperature range of 60 deg C in the disordered state. With temperature decrease crystals with the mean ordering degree-paraelectric phase pass to the antiferroelectric phase and then to the ferroelectric phase

  15. Influence of UV light and heat on the ferroelectric properties of lithium niobate crystals

    Energy Technology Data Exchange (ETDEWEB)

    Steigerwald, Hendrik

    2011-08-15

    One of the most important non-linear-optical materials is lithium niobate, due to its ease of fabrication, robustness, transparency in the visible-to-infrared and excellent nonlinear properties. In this thesis the issue of tailoring ferroelectric domain structures in lithium niobate crystals is approached from two sides: interaction of defect structures inside the crystal with growing ferroelectric domains is investigated and also actual domain patterning on all crystal faces by different methods is performed. Special emphasis is given to the Mg-doped material. The fundamental understanding and the methods of domain patterning developed in this thesis are then used to obtain tailored domain structures that meet the requirements of their intended application in non-linear optics. (orig.)

  16. Electric-field-tunable mechanical properties of relaxor ferroelectric single crystal measured by nanoindentation

    Science.gov (United States)

    Zhou, Hao; Pei, Yongmao; Li, Faxin; Luo, Haosu; Fang, Daining

    2014-02-01

    Electric field dependent mechanical properties of relaxor ferroelectric material Pb(Mn1/3Nb2/3)O3-PbTiO3 are investigated with the nanoindentation technique. Giant electric-field-tunable apparent elastic modulus (up to -39%), hardness (-9% to 20%), and energy dissipation (up to -13%) are reported. Based on experimental data, a characterization method of electromechanical coupled nanoindentation is proposed. In this method, an electric field tunable scaling relationship among elastic modulus, hardness, and indentation work for ferroelectric materials can be determined. In addition, this method can be used to obtain the electric-field-dependent elastic modulus and hardness, and avoid the estimate of contact area in the Oliver-Pharr method. Finally, the different effects on elastic modulus between positive and negative electric fields can be explained by the flexoelectric effect.

  17. The enhanced piezoelectricity in compositionally graded ferroelectric thin films under electric field: A role of flexoelectric effect

    Science.gov (United States)

    Qiu, Ye; Wu, Huaping; Wang, Jie; Lou, Jia; Zhang, Zheng; Liu, Aiping; Chai, Guozhong

    2018-02-01

    Compositionally graded ferroelectric thin films are found to produce large strain gradients, which can be used to tune the physical properties of materials through the flexoelectric effect, i.e., the coupling of polarization and the strain gradient. The influences of the flexoelectric effect on the polarization distribution and the piezoelectric properties in compositionally graded Ba1-xSrxTiO3 ferroelectric thin films are investigated by using an extended thermodynamic theory. The calculation results show that the presence of the flexoelectric effect tends to enhance and stabilize polarization components. The polarization rotation induced by the flexoelectric field has been predicted, which is accompanied by more uniform and orderly polarization components. A remarkable enhancement of piezoelectricity is obtained when the flexoelectric field is considered, suggesting that compositionally graded Ba1-xSrxTiO3 ferroelectric thin films with a large strain gradient are promising candidates for piezoelectric devices.

  18. Ultrathin limit and dead-layer effects in local polarization switching of BiFeO3

    NARCIS (Netherlands)

    Maksymovych, P.; Huijben, Mark; Pan, M.; Jesse, S.; Balke, N.; Chu, Y.H.; Chang, H.J.; Borisevich, A.Y.; Baddorf, A.P.; Rijnders, Augustinus J.H.M.; Blank, David H.A.; Ramesh, R.; Kalinin, S.V.

    2012-01-01

    Using piezoresponse force microscopy in an ultrahigh vacuum, polarization switching has been detected and quantified in epitaxial BiFeO3 films from 200 to about 4 unit cells thick. Local remnant piezoresponse was utilized to probe both ferroelectric properties and effects of imperfect electrical

  19. Ferroelectric devices, interconnects, and methods of manufacture thereof

    KAUST Repository

    Alshareef, Husam N.

    2013-12-12

    A doped electroconductive organic polymer is used for forming the electrode of a ferroelectric device or an interconnect. An exemplary ferroelectric device is a ferrelectric capacitor comprising: a substrate (101); a first electrode (106) disposed on the substrate; a ferroelectric layer (112) disposed on and in contact with the first electrode; and a second electrode (116) disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer, for example DMSO-doped PEDOT-PSS.

  20. Ferroelectric domain pattern in barium titanate single crystals studied by means of digital holographic microscopy

    Czech Academy of Sciences Publication Activity Database

    Mokrý, Pavel; Psota, Pavel; Steiger, Kateřina; Václavík, Jan; Doleček, Roman; Vápenka, David; Lédl, Vít

    2016-01-01

    Roč. 49, č. 25 (2016), č. článku 255307. ISSN 0022-3727 R&D Projects: GA ČR(CZ) GA14-32228S Institutional support: RVO:61389021 Keywords : ferroelectric domain patterns * electro-optical materials * digital holographic microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.588, year: 2016 http://iopscience.iop.org/article/10.1088/0022-3727/49/25/255307

  1. Ferroelectric crystals for photonic applications including nanoscale fabrication and characterization techniques

    CERN Document Server

    Grilli, Simonetta

    2008-01-01

    This book deals with the latest achievements in the field of ferroelectric domain engineering and characterization at micron- and nano-scale dimensions and periods. The book collects the results obtained in the last years by world scientific leaders in the field, thus providing a valid and unique overview of the state of the art and also a view to future applications of those engineered materials in the field of photonics.

  2. Electric-field-tunable mechanical properties of relaxor ferroelectric single crystal measured by nanoindentation

    OpenAIRE

    Zhou, Hao; Pei, Yongmao; Li, Faxin; Luo, Haosu; Fang, Daining

    2014-01-01

    Electric field dependent mechanical properties of relaxor ferroelectric material Pb(Mn1/3Nb2/3)O3-PbTiO3 are investigated with the nanoindentation technique. Giant electric-field-tunable apparent elastic modulus (up to -39%), hardness (-9% to 20%) and energy dissipation (up to -13%) are reported. Based on experimental data, a characterization method of electromechanical coupled nanoindentation is proposed. In this method, an electric field tunable scaling relationship among elastic modulus, h...

  3. Piezoelectricity of a ferroelectric liquid crystal with a glass transition.

    Science.gov (United States)

    Jákli, A; Tóth-Katona, T; Scharf, T; Schadt, M; Saupe, A

    2002-07-01

    Pressure-electric (hydrostatic piezoelectric) measurements are reported on bookshelf textures of a ferroelectric smectic-C (Sm C*) liquid crystal with a glass transition. The continuous variation of a partially fluid state to the solid glass enables one to trace how the piezoelectric effect depends on the consistency of the material. It was observed that in the Sm C* samples with poled glass the piezoelectric constants are comparable to conventional piezoelectric crystals and poled piezoelectric polymers. This implies their application possibilities. The magnitude of the piezoelectric constant in the glassy state depends very much on the poling conditions. The studies indicate that there are two counteracting effects, which cancel each other out in the Sm C* phase near the glass transition. Our analysis indicates that the pressure-induced director tilt change has a dominating effect both in the fluid and the glassy Sm C* states.

  4. Nanostructure and Defect Chemistry of Relaxor Ferroelectrics

    Science.gov (United States)

    1988-07-31

    Pb(Scl/ 2Ta1 )O3._ (PST), undoped and La/Na-doped Pb(Mg1P3Nb2/3 )O (PMN) and ,yBa(Zn1/3Nb2 )O (BZN), 2) micro -polar domains in normal ferroelectrics...1 /2Ta1/2)03 (PST), undoped and La/Na-doped Pb(Mg 1 /3Nb 2 / 3)03 (PMIN) and Ba(Zn1 /3Nb2/ 3)03 (BZN), 2) micro -polar domains in normal ferroelectrics...meeting of Amer. Cer. Soc., (1987) [18] L. PADEL, P. POIX, and A.MICHEL; Revue de chimie minerale , 337, 9, (1972) [19] E. J. FRESIA, L. KATZ and R

  5. A ferroelectric memory technology for embedded LSI

    CERN Document Server

    Kunio, T

    1999-01-01

    We have developed an FeRAM (Ferroelectric Random Access Memory) embedded smart card LSI by using double metal 0.8- mu m CMOS technology. The smart-card has a 256-byte FeRAM macro and an 8-bit microcontroller. The FeRAM macro has the $9 performance of 10/sup 8/ endurance cycles and is half the size of an EEPROM macro. We have also developed a new CMVP (Capacitor on Meta/Via Stacked Plug) cell for an advanced FeRAM embedded LSI by using 0.25- mu m CMOS technology. $9 The ferroelectric capacitors of this cell are fabricated after the multiple interconnect is formed, and a cell area of 3.2 mu m/sup 2/ is obtained. (8 refs).

  6. Light-Activated Gigahertz Ferroelectric Domain Dynamics

    Science.gov (United States)

    Akamatsu, Hirofumi; Yuan, Yakun; Stoica, Vladimir A.; Stone, Greg; Yang, Tiannan; Hong, Zijian; Lei, Shiming; Zhu, Yi; Haislmaier, Ryan C.; Freeland, John W.; Chen, Long-Qing; Wen, Haidan; Gopalan, Venkatraman

    2018-03-01

    Using time- and spatially resolved hard x-ray diffraction microscopy, the striking structural and electrical dynamics upon optical excitation of a single crystal of BaTiO3 are simultaneously captured on subnanoseconds and nanoscale within individual ferroelectric domains and across walls. A large emergent photoinduced electric field of up to 20 ×106 V /m is discovered in a surface layer of the crystal, which then drives polarization and lattice dynamics that are dramatically distinct in a surface layer versus bulk regions. A dynamical phase-field modeling method is developed that reveals the microscopic origin of these dynamics, leading to gigahertz polarization and elastic waves traveling in the crystal with sonic speeds and spatially varying frequencies. The advances in spatiotemporal imaging and dynamical modeling tools open up opportunities for disentangling ultrafast processes in complex mesoscale structures such as ferroelectric domains.

  7. Ferroelectric, pyroelectric, and piezoelectric properties of a photovoltaic perovskite oxide

    Science.gov (United States)

    Bai, Yang; Siponkoski, Tuomo; Peräntie, Jani; Jantunen, Heli; Juuti, Jari

    2017-02-01

    A perovskite solid-solution, (1-x)KNbO3-xBaNi1/2Nb1/2O3-δ (KBNNO), has been found to exhibit tunable bandgaps in the visible light energy range, making it suitable for light absorption and conversion applications, e.g., solar energy harvesting and light sensing. Such a common ABO3-type perovskite structure, most widely used for ferroelectrics and piezoelectrics, enables the same solid-solution material to be used for the simultaneous harvesting or sensing of solar, kinetic, and thermal energies. In this letter, the ferroelectric, pyroelectric, and piezoelectric properties of KBNNO with x = 0.1 have been reported above room temperature. The investigation has also identified the optimal bandgap for visible light absorption. The stoichiometric composition and also a composition with potassium deficiency have been investigated, where the latter has shown more balanced properties. As a result, a remanent polarization of 3.4 μC/cm2, a pyroelectric coefficient of 26 μC/m2 K, piezoelectric coefficients d33 ≈ 23 pC/N and g33 ≈ 4.1 × 10-3 Vm/N, and a direct bandgap of 1.48 eV have been measured for the KBNNO ceramics. These results are considered to be a significant improvement compared to those of other compositions (e.g., ZnO and AlN), which could be used for the same applications. The results pave the way for the development of hybrid energy harvesters/sensors, which can convert multiple energy sources into electrical energy simultaneously in the same material.

  8. Electrically induced mechanical precompression of ferroelectric plates

    Science.gov (United States)

    Chen, P.J.

    1987-03-02

    A method of electrically inducing mechanical precompression of ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion. 2 figs.

  9. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  10. Enhancement of switching speed of BiFeO3 capacitors by magnetic fields

    Directory of Open Access Journals (Sweden)

    E. J. Guo

    2014-09-01

    Full Text Available The effect of a magnetic field on the ferroelectric switching kinetics of BiFeO3 (BFO capacitors with La0.8Ca0.2MnO3 (LCMO bottom electrode and Pt top contact has been investigated. We find a strong dependence of the remnant polarization and coercive field on the magnetic field. The switching time can be systematically tuned by magnetic field and reaches a tenfold reduction around the Curie temperature of LCMO at 4 T. We attribute this behavior to the splitting of the voltage drops across the BFO film and the LCMO bottom electrode, which can be strongly influenced by an external magnetic field due to the magnetoresistance. Further experiments on the BFO capacitors with SrRuO3 bottom electrodes show little magnetic field dependence of ferroelectric switching confirming our interpretation. Our results provide an efficient route to control the ferroelectric switching speed through the magnetic field, implying potential application in multifunctional devices.

  11. KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications

    OpenAIRE

    Laur, Vincent; Rousseau, Anthony; Tanné, Gérard; Laurent, Paul; Députier, Stéphanie; Guilloux-Viry, Maryline; Huret, Fabrice

    2006-01-01

    "©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."; International audience; In this study about the relationships between structural and microwave electrical properties of KTa1-xNbxO3 (KTN) ferroelectric materi...

  12. A high-peak-power UV picosecond-pulse light source based on a gain-switched 1.55 microm laser diode and its application to time-resolved spectroscopy of blue-violet materials.

    Science.gov (United States)

    Sato, Aya; Kono, Shunsuke; Saito, Kyosuke; Sato, Ki-ichi; Yokoyama, Hiroyuki

    2010-02-01

    We generated sub-kilowatt peak-power and 6-ps duration 390-nm optical pulses via the fourth harmonic generation of amplified optical output from a gain-switched 1.55-microm laser diode. We obtained a power-conversion-efficiency of 12% from 1.55-microm to 390-nm light, and subsequently applied the ultraviolet pulses to time-resolved spectroscopy of blue-violet luminescent materials, including a Coumarine dye solution and nitride semiconductor materials using single-photon and two-photon excitation schemes.

  13. Structural Properties of Ferroelectric Perovskites

    National Research Council Canada - National Science Library

    Vanderbilt, David

    1998-01-01

    Under this research grant, we carried out realistic first-principles computer calculations of the ground-state and finite-temperature structural and dielectric properties of cubic perovskite materials...

  14. "Platform switching": Serendipity

    Directory of Open Access Journals (Sweden)

    N Kalavathy

    2014-01-01

    Full Text Available Implant dentistry is the latest developing field in terms of clinical techniques, research, material science and oral rehabilitation. Extensive work is being done to improve the designing of implants in order to achieve better esthetics and function. The main drawback with respect to implant restoration is achieving good osseointegration along with satisfactory stress distribution, which in turn will improve the prognosis of implant prosthesis by reducing the crestal bone loss. Many concepts have been developed with reference to surface coating of implants, surgical techniques for implant placement, immediate and delayed loading, platform switching concept, etc. This article has made an attempt to review the concept of platform switching was in fact revealed accidentally due to the nonavailability of the abutment appropriate to the size of the implant placed. A few aspect of platform switching, an upcoming idea to reduce crestal bone loss have been covered. The various methods used for locating and preparing the data were done through textbooks, Google search and related articles.

  15. Switched on!

    CERN Multimedia

    2008-01-01

    Like a star arriving on stage, impatiently followed by each member of CERN personnel and by millions of eyes around the world, the first beam of protons has circulated in the LHC. After years in the making and months of increasing anticipation, today the work of hundreds of people has borne fruit. WELL DONE to all! Successfully steered around the 27 kilometres of the world’s most powerful particle accelerator at 10:28 this morning, this first beam of protons circulating in the ring marks a key moment in the transition from over two decades of preparation to a new era of scientific discovery. "It’s a fantastic moment," said the LHC project leader Lyn Evans, "we can now look forward to a new era of understanding about the origins and evolution of the universe". Starting up a major new particle accelerator takes much more than flipping a switch. Thousands of individual elements have to work in harmony, timings have to be synchronize...

  16. A solid-state dielectric elastomer switch for soft logic

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Nixon [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A. [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States); O' Brien, Benjamin M. [StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Anderson, Iain A. [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Department of Engineering Science, School of Engineering, The University of Auckland, Level 3, 70 Symonds Street, Auckland 1010 (New Zealand)

    2016-03-07

    In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

  17. Strain Engineering of Ferroelectric Domains in KxNa1−xNbO3 Epitaxial Layers

    Directory of Open Access Journals (Sweden)

    Jutta Schwarzkopf

    2017-08-01

    Full Text Available The application of lattice strain through epitaxial growth of oxide films on lattice mismatched perovskite-like substrates strongly influences the structural properties of ferroelectric domains and their corresponding piezoelectric behavior. The formation of different ferroelectric phases can be understood by a strain-phase diagram, which is calculated within the framework of the Landau–Ginzburg–Devonshire theory. In this paper, we illustrate the opportunity of ferroelectric domain engineering in the KxNa1−xNbO3 lead-free material system. In particular, the following examples are discussed in detail: (i Different substrates (NdGaO3, SrTiO3, DyScO3, TbScO3, and GdScO3 are used to systematically tune the incorporated epitaxial strain from compressive to tensile. This can be exploited to adjust the NaNbO3 thin film surface orientation and, concomitantly, the vector of electrical polarization, which rotates from mainly vertical to exclusive in-plane orientation. (ii In ferroelectric NaNbO3, thin films grown on rare-earth scandate substrates, highly regular stripe domain patterns are observed. By using different film thicknesses, these can be tailored with regard to domain periodicity and vertical polarization component. (iii A featured potassium concentration of x = 0.9 of KxNa1−xNbO3 thin films grown on (110 NdScO3 substrates favors the coexistence of two equivalent, monoclinic, but differently oriented ferroelectric phases. A complicated herringbone domain pattern is experimentally observed which consists of alternating MC and a1a2 domains. The coexistence of different types of ferroelectric domains leads to polarization discontinuities at the domain walls, potentially enabling high piezoelectric responses. In each of these examples, the experimental results are in excellent agreement with predictions based on the linear elasticity theory.

  18. Characteristics of 1–3-type ferroelectric ceramic/auxetic polymer composites

    International Nuclear Information System (INIS)

    Topolov, V Yu; Bowen, C R

    2008-01-01

    This paper presents modelling and simulation results on 1–3 piezoactive composites comprising a range of ferroelectric ceramics, which are assumed to have variable properties and an auxetic polymer (i.e. a material with a negative Poisson ratio) that improves the hydrostatic piezoelectric response of the composite. Dependences of the effective piezoelectric coefficients and related parameters of the 1–3 composites on the degree of poling, mobility of the 90° domain walls within ceramic grains, on the volume fraction of the ceramic component and on the Poisson ratio of the polymer component have been calculated and analysed. The role of the piezoelectric anisotropy and domain-orientation processes in improving and optimising the effective parameters, piezoelectric activity and sensitivity of 1–3 ferroelectric ceramic/auxetic composites is discussed

  19. Ferroelectric Properties of Nanoscale PbTiO3 Films by Hydrothemal Method

    International Nuclear Information System (INIS)

    Htet Htet Nwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Lead (II) nitride (Pb(NO3)2), titanium dioxide (TiO2) and potassium hydroxide (KOH) were used as starting materials. Lead titanate powder was formed by hydrothermal method at 150 C for 6h. The calcuim fluoride (CaF2) and titanium dioxide (TiO2) were separately adapted as intermediate layer on p-Si (100) substrate. Lead titanate thin film was formed onto CaF2/Si and TiO2/Si substrates by spin processor. 100kHz C-V characteristics of PbTiO3 films were measured by impedance analyzer (LCR meter). Polarization-electric field (P-E) characteristics were measured for both MFIS (Metal/ Ferroelectric/ Insulator/ Semiconductor) structures by applying the same triangular wave electric field in order to allow their application in NVFRAM (Non Volatile Ferroelectric Random Access Memory).

  20. Ferroelectric Dipole Electrets Prepared from Soft and Hard PZT Ceramics in Electrostatic Vibration Energy Harvesters

    International Nuclear Information System (INIS)

    Asanuma, H; Oguchi, H; Hara, M; Kuwano, H

    2013-01-01

    Aiming at longer stability of surface potential, we propose a ferroelectric dipole electret (FDE) prepared from hard ferroelectric material. We compared output power of electrostatic vibration energy harvester and surface potential stability between FDEs prepared from soft and hard PZT ceramics, as well as a CYTOP polymer electret. The hard FDE showed a seven-fold increase in output power over the soft FDE and nine-fold increase over the CYTOP polymer electret. The hard FDE also showed longer stability of surface potential than that of the soft FDE, whereas the stability of the hard FDE was not yet comparable to that of CYTOP polymer electret. A FDE prepared from harder PZT ceramic (with higher coercive electric field and Curie temperature) may provide more stability in surface potential