WorldWideScience

Sample records for switches mechanical

  1. Mechanism of single atom switch on silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.

    1998-01-01

    We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...

  2. Molecular mechanism of the Syk activation switch.

    Science.gov (United States)

    Tsang, Emily; Giannetti, Anthony M; Shaw, David; Dinh, Marie; Tse, Joyce K Y; Gandhi, Shaan; Ho, Hoangdung; Wang, Sandra; Papp, Eva; Bradshaw, J Michael

    2008-11-21

    Many immune signaling pathways require activation of the Syk tyrosine kinase to link ligation of surface receptors to changes in gene expression. Despite the central role of Syk in these pathways, the Syk activation process remains poorly understood. In this work we quantitatively characterized the molecular mechanism of Syk activation in vitro using a real time fluorescence kinase assay, mutagenesis, and other biochemical techniques. We found that dephosphorylated full-length Syk demonstrates a low initial rate of substrate phosphorylation that increases during the kinase reaction due to autophosphorylation. The initial rate of Syk activity was strongly increased by either pre-autophosphorylation or binding of phosphorylated immune tyrosine activation motif peptides, and each of these factors independently fully activated Syk. Deletion mutagenesis was used to identify regions of Syk important for regulation, and residues 340-356 of the SH2 kinase linker region were identified to be important for suppression of activity before activation. Comparison of the activation processes of Syk and Zap-70 revealed that Syk is more readily activated by autophosphorylation than Zap-70, although both kinases are rapidly activated by Src family kinases. We also studied Syk activity in B cell lysates and found endogenous Syk is also activated by phosphorylation and immune tyrosine activation motif binding. Together these experiments show that Syk functions as an "OR-gate" type of molecular switch. This mechanism of switch-like activation helps explain how Syk is both rapidly activated after receptor binding but also sustains activity over time to facilitate longer term changes in gene expression.

  3. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, M.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  4. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, M.; Asadi, K. (Kamal); Blom, P.W.M.; Leeuw, de D.M.

    2012-01-01

    The availability of a reliable memory element is crucial for the fabrication of ‘plastic’ logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  5. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, Martijn; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  6. Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

    Directory of Open Access Journals (Sweden)

    Ee Wah Lim

    2015-09-01

    Full Text Available Resistive switching effect in transition metal oxide (TMO based material is often associated with the valence change mechanism (VCM. Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC, trap-assisted tunneling (TAT and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

  7. A novel RF MEMS switch with novel mechanical structure modeling

    International Nuclear Information System (INIS)

    Chan, K Y; Ramer, R

    2010-01-01

    A novel RF MEMS contact-type switch for RF and microwave applications is presented. The switch is designed with special mechanical structures for stiffness enhancement. A method of using dimple lines to reduce the stress sensitivity of a beam is shown with complete mathematical modeling and finite element mechanical simulation. A complete mathematical model is developed for the proposed switch. Limited fabrication resolution and non-uniformities in layer thickness and stress were taken into consideration for this design, concomitantly with the preservation of device miniaturization and functionalities. The novel mechanical modeling of the switch leads to the estimation of the actuation voltage and shows simplification from previously published analysis. The measured actuation voltage and RF performance of the novel RF MEMS switch are also reported. The switch actuated at 20 V achieved better than 22 dB return loss and less than 0.7 dB insertion loss in on state from dc–40 GHz; it provided better than 30 dB isolation in off state

  8. Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2015-01-12

    Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force.

  9. Experiments on microsecond conduction time plasma opening switch mechanisms

    International Nuclear Information System (INIS)

    Rix, W.; Coleman, M.; Miller, A.R.; Parks, D.; Robertson, K.; Thompson, J.; Waisman, E.; Wilson, A.

    1993-01-01

    The authors describe a series of experiments carried out on ACE 2 and ACE 4 to elucidate the mechanisms controlling the conduction and opening phases on plasma opening switches in a radial geometry with conduction times on the order of a microsecond. The results indicate both conduction and opening physics are similar to that observed on lower current systems in a coaxial geometry

  10. The allosteric switching mechanism in bacteriophage MS2

    Energy Technology Data Exchange (ETDEWEB)

    Perkett, Matthew R.; Mirijanian, Dina T.; Hagan, Michael F., E-mail: hagan@brandeis.edu [Martin Fisher School of Physics, Brandeis University, Waltham, Massachusetts 02474 (United States)

    2016-07-21

    We use all-atom simulations to elucidate the mechanisms underlying conformational switching and allostery within the coat protein of the bacteriophage MS2. Assembly of most icosahedral virus capsids requires that the capsid protein adopts different conformations at precise locations within the capsid. It has been shown that a 19 nucleotide stem loop (TR) from the MS2 genome acts as an allosteric effector, guiding conformational switching of the coat protein during capsid assembly. Since the principal conformational changes occur far from the TR binding site, it is important to understand the molecular mechanism underlying this allosteric communication. To this end, we use all-atom simulations with explicit water combined with a path sampling technique to sample the MS2 coat protein conformational transition, in the presence and absence of TR-binding. The calculations find that TR binding strongly alters the transition free energy profile, leading to a switch in the favored conformation. We discuss changes in molecular interactions responsible for this shift. We then identify networks of amino acids with correlated motions to reveal the mechanism by which effects of TR binding span the protein. We find that TR binding strongly affects residues located at the 5-fold and quasi-sixfold interfaces in the assembled capsid, suggesting a mechanism by which the TR binding could direct formation of the native capsid geometry. The analysis predicts amino acids whose substitution by mutagenesis could alter populations of the conformational substates or their transition rates.

  11. Floating electrode microelectromechanical system capacitive switches: A different actuation mechanism

    Science.gov (United States)

    Papaioannou, G.; Giacomozzi, F.; Papandreou, E.; Margesin, B.

    2011-08-01

    The paper investigates the actuation mechanism in floating electrode microelectromechanical system capacitive switches. It is demonstrated that in the pull-in state, the device operation turns from voltage to current controlled actuation. The current arises from Poole-Frenkel mechanism in the dielectric film and Fowler-Nordheim in the bridge-floating electrode air gap. The pull-out voltage seems to arise from the abrupt decrease of Fowler-Nordheim electric field intensity. This mechanism seems to be responsible for the very small difference with respect to the pull-in voltage.

  12. On the asymptotic stability of nonlinear mechanical switched systems

    Science.gov (United States)

    Platonov, A. V.

    2018-05-01

    Some classes of switched mechanical systems with dissipative and potential forces are considered. The case, where either dissipative or potential forces are essentially nonlinear, is studied. It is assumed that the zero equilibrium position of the system is asymptotically stable at least for one operating mode. We will look for sufficient conditions which guarantee the preservation of asymptotic stability of the equilibrium position under the switching of modes. The Lyapunov direct method is used. A Lyapunov function for considered system is constructed, which satisfies the differential inequality of special form for every operating mode. This inequality is nonlinear for the chosen mode with asymptotically stable equilibrium position, and it is linear for the rest modes. The correlations between the intervals of activity of the pointed mode and the intervals of activity of the rest modes are obtained which guarantee the required properties.

  13. Switch junction sequences in PMS2-deficient mice reveal a microhomology-mediated mechanism of Ig class switch recombination

    Science.gov (United States)

    Ehrenstein, Michael R.; Rada, Cristina; Jones, Anne-Marie; Milstein, César; Neuberger, Michael S.

    2001-01-01

    Isotype switching involves a region-specific, nonhomologous recombinational deletion that has been suggested to occur by nonhomologous joining of broken DNA ends. Here, we find increased donor/acceptor homology at switch junctions from PMS2-deficient mice and propose that class switching can occur by microhomology-mediated end-joining. Interestingly, although isotype switching and somatic hypermutation show many parallels, we confirm that PMS2 deficiency has no major effect on the pattern of nucleotide substitutions generated during somatic hypermutation. This finding is in contrast to MSH2 deficiency. With MSH2, the altered pattern of switch recombination and hypermutation suggests parallels in the mechanics of the two processes, whereas the fact that PMS2 deficiency affects only switch recombination may reflect differences in the pathways of break resolution. PMID:11717399

  14. A comparison of medium voltage static transfer switches and medium voltage mechanical transfer switches

    Energy Technology Data Exchange (ETDEWEB)

    Risko, W. P.

    2002-07-01

    Medium voltage static transfer switches (MVSTS) and medium voltage mechanical transfer switches (MVATS) perform a common function, namely selecting between two independent power sources to provide uninterrupted power to the loads. Although the functions are the same the method of performing that function is different and this method impacts the sources and connected load. This article describes the two methods of transfer -- mechanical and static -- their advantages and disadvantages, and their preferred applications. The MVSTS can be incorporated into many applications; it can work in conjunction with backup sources such as generators; and can replace generators as a low cost solution. The reliability of the MVSTS is very high; it also outperforms the MVATS with regard to transfer speed, and can react to anomalies in the same sub-cycle time frame. Because the design of the MVSTS is modular, it can be engineered and designed to fit into existing and future systems and applications, and can be used with different switchgear variations and protection arrangements. For example, load isolation and protection breakers can be added to the switchgear to provide flexibility and isolation.

  15. Acoustic emission mechanism at switching of ferroelectric crystals

    International Nuclear Information System (INIS)

    Belov, V.V.; Morozova, G.P.; Serdobol'skaya, O.Yu.

    1986-01-01

    Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO

  16. Acoustic emission mechanism at switching of ferroelectric crystals

    Energy Technology Data Exchange (ETDEWEB)

    Belov, V V; Morozova, G P; Serdobol' skaya, O Yu

    1986-01-01

    Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO.

  17. Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

    International Nuclear Information System (INIS)

    Huang Da; Wu Jun-Jie; Tang Yu-Hua

    2013-01-01

    With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor has brought much attention to this study. Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are presented. We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms, which are applied to explain their resistive switchings

  18. Determination of the mechanical thermostat electrical contacts switching quality with sound and vibration analysis

    Energy Technology Data Exchange (ETDEWEB)

    Rejc, Jure; Munih, Marko [University of Ljubljana, Ljubljana (Slovenia)

    2017-05-15

    A mechanical thermostat is a device that switches heating or cooling appliances on or off based on temperature. For this kind of use, electronic or mechanical switching concepts are applied. During the production of electrical contacts, several irregularities can occur leading to improper switching events of the thermostat electrical contacts. This paper presents a non-obstructive method based on the fact that when the switching event occurs it can be heard and felt by human senses. We performed several laboratory tests with two different methods. The first method includes thermostat switch sound signal analysis during the switching event. The second method is based on sampling of the accelerometer signal during the switching event. The results show that the sound analysis approach has great potential. The approach enables an accurate determination of the switching event even if the sampled signal carries also the switching event of the neighbour thermostat.

  19. Switching hierarchical leadership mechanism in homing flight of pigeon flocks

    Science.gov (United States)

    Chen, Duxin; Vicsek, Tamás; Liu, Xiaolu; Zhou, Tao; Zhang, Hai-Tao

    2016-06-01

    To explore the fascinating inter-individual interaction mechanism governing the abundant biological grouping behaviors, more and more efforts have been devoted to collective motion investigation in recent years. Therein, bird flocking is one of the most intensively studied behaviors. A previous study (Nagy M. et al., Nature, 464 (2010) 890.) claims the existence of a well-defined hierarchical structure in pigeon flocks, which implies that a multi-layer leadership network leads to the occurrence of highly coordinated pigeon flock movements. However, in this study, by using high-resolution GPS data of homing flight of pigeon flocks, we reveal an explicit switching hierarchical mechanism underlying the group motions of pigeons. That is, a pigeon flock has a long-term leader for smooth moving trajectories, whereas the leading tenure passes to a temporary one upon sudden turns or zigzags. Therefore, the present observation helps explore more deeply into the principle of a huge volume of bird flocking dynamics. Meanwhile, from the engineering point of view, it may shed some light onto industrial multi-robot coordination and unmanned air vehicle formation control.

  20. An experimental mechanical switch for 3 kA driven by superconducting coils

    International Nuclear Information System (INIS)

    Herman, H.J.; Ten Haken, B.; Van de Klundert, L.J.M.

    1986-01-01

    Usually mechanical switches that are built for use in superconducting circuits are driven in some way by a rod which is controlled at room temperature. In this paper, an alternative method to drive the electrodes of the switch is reported. In fact the new device is a superconducting relay that uses an antiseries connection of two superconducting air-core coils. The repulsing force of these relay coils enables the switch to be closed by applying a pressure to the electrodes. The off-state is effected by a set of springs which interrupt the electrodes when the coil current is switched off. We realized that this electro-magnetic method of producing large forces could be promising for driving a mechanical switch. The desired method was demonstrated by an experimental model. A switch-on resistance of 8*10 -8 Ω with a switch current of 3 kA and a contact force of 20 kN was measured

  1. Modeling novel back-pressure mechanisms for a 100 Gb/s switch

    DEFF Research Database (Denmark)

    Fagertun, Anna Manolova; Ruepp, Sarah Renée

    2012-01-01

    In this work we evaluate the performance of novel back-pressure mechanisms in a Clos-based 100 Gb/s switch system via OPNET modeler simulations. The effectiveness of the mechanisms under different switch configurations, as well as under different traffic patterns, is presented. Our results indicate...... that the proposed back-pressure techniques can effectively reduce the requirements for buffer space in the different stages of the Clos switch....

  2. Hybrid plasmonic nanodevices: Switching mechanism for the nonlinear emission

    Energy Technology Data Exchange (ETDEWEB)

    Bragas, Andrea V. [Departamento de Física, FCEyN, Universidad de Buenos Aires, IFIBA CONICET, 1428 Buenos Aires (Argentina); Singh, Mahi R. [Department of Physics and Astronomy, Western University, London (Canada)

    2014-03-31

    Control of the light emission at the nanoscale is of central interest in nanophotonics due to the many applications in very different fields, ranging from quantum information to biophysics. Resonant excitation of surface plasmon polaritons in metal nanoparticles create nanostructured and enhanced light fields around those structures, which produce their strong interaction in a hybrid nanodevice with other plasmonic or non-plasmonic objects. This interaction may in turn also modulate the far field with important consequences in the applications. We show in this paper that the nonlinear emission from semiconductor quantum dots is strongly affected by the close presence of metal nanoparticles, which are resonantly excited. Using a pulsed laser, optical second harmonic is generated in the quantum dot, and it is highly enhanced when the laser is tuned around the nanoparticle plasmon resonance. Even more interesting is the demonstration of a switching mechanism, controlled by an external continuous-wave field, which can enhance or extinguish the SH signal, even when the pulsed laser is always on. Experimental observations are in excellent agreement with the theoretical calculations, based on the dipole-dipole near-field coupling of the objects forming the hybrid system.

  3. Hypo- and hyperactivated Notch signaling induce a glycolytic switch through distinct mechanisms

    NARCIS (Netherlands)

    Landor, S.; Mutvei, A.P.; Mamaeva, V.; Jin, S.; Busk, M.; Borra, R.; Grönroos, T.J.; Kronqvist, P.; Lendahl, U.; Sahlgren, C.M.

    2011-01-01

    A switch from oxidative phosphorylation to glycolysis is frequently observed in cancer cells and is linked to tumor growth and invasion, but the underpinning molecular mechanisms controlling the switch are poorly understood. In this report we show that Notch signaling is a key regulator of cellular

  4. Controlled switching of single-molecule junctions by mechanical motion of a phenyl ring

    Directory of Open Access Journals (Sweden)

    Yuya Kitaguchi

    2015-10-01

    Full Text Available Mechanical methods for single-molecule control have potential for wide application in nanodevices and machines. Here we demonstrate the operation of a single-molecule switch made functional by the motion of a phenyl ring, analogous to the lever in a conventional toggle switch. The switch can be actuated by dual triggers, either by a voltage pulse or by displacement of the electrode, and electronic manipulation of the ring by chemical substitution enables rational control of the on-state conductance. Owing to its simple mechanics, structural robustness, and chemical accessibility, we propose that phenyl rings are promising components in mechanical molecular devices.

  5. Macro-mechanics controls quantum mechanics: mechanically controllable quantum conductance switching of an electrochemically fabricated atomic-scale point contact.

    Science.gov (United States)

    Staiger, Torben; Wertz, Florian; Xie, Fangqing; Heinze, Marcel; Schmieder, Philipp; Lutzweiler, Christian; Schimmel, Thomas

    2018-01-12

    Here, we present a silver atomic-scale device fabricated and operated by a combined technique of electrochemical control (EC) and mechanically controllable break junction (MCBJ). With this EC-MCBJ technique, we can perform mechanically controllable bistable quantum conductance switching of a silver quantum point contact (QPC) in an electrochemical environment at room temperature. Furthermore, the silver QPC of the device can be controlled both mechanically and electrochemically, and the operating mode can be changed from 'electrochemical' to 'mechanical', which expands the operating mode for controlling QPCs. These experimental results offer the perspective that a silver QPC may be used as a contact for a nanoelectromechanical relay.

  6. Macro-mechanics controls quantum mechanics: mechanically controllable quantum conductance switching of an electrochemically fabricated atomic-scale point contact

    Science.gov (United States)

    Staiger, Torben; Wertz, Florian; Xie, Fangqing; Heinze, Marcel; Schmieder, Philipp; Lutzweiler, Christian; Schimmel, Thomas

    2018-01-01

    Here, we present a silver atomic-scale device fabricated and operated by a combined technique of electrochemical control (EC) and mechanically controllable break junction (MCBJ). With this EC-MCBJ technique, we can perform mechanically controllable bistable quantum conductance switching of a silver quantum point contact (QPC) in an electrochemical environment at room temperature. Furthermore, the silver QPC of the device can be controlled both mechanically and electrochemically, and the operating mode can be changed from ‘electrochemical’ to ‘mechanical’, which expands the operating mode for controlling QPCs. These experimental results offer the perspective that a silver QPC may be used as a contact for a nanoelectromechanical relay.

  7. Emerging memories: resistive switching mechanisms and current status

    International Nuclear Information System (INIS)

    Jeong, Doo Seok; Thomas, Reji; Katiyar, R S; Scott, J F; Kohlstedt, H; Petraru, A; Hwang, Cheol Seong

    2012-01-01

    The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO 2 , Cr 2 O 3 , FeO x and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO 3 , Pb(Zr x Ti 1−x )O 3 , BiFeO 3 and Pr x Ca 1−x MnO 3 ; (iii) large band gap high-k dielectrics, e.g. Al 2 O 3 and Gd 2 O 3 ; (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In 2 Se 3 and In 2 Te 3 . Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors. (review article)

  8. Emerging memories: resistive switching mechanisms and current status

    Science.gov (United States)

    Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, Cheol Seong

    2012-07-01

    The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO2, Cr2O3, FeOx and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO3, Pb(Zrx Ti1-x)O3, BiFeO3 and PrxCa1-xMnO3 (iii) large band gap high-k dielectrics, e.g. Al2O3 and Gd2O3; (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In2Se3 and In2Te3. Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

  9. Neural Mechanisms Underlying the Cost of Task Switching: An ERP Study

    Science.gov (United States)

    Li, Ling; Wang, Meng; Zhao, Qian-Jing; Fogelson, Noa

    2012-01-01

    Background When switching from one task to a new one, reaction times are prolonged. This phenomenon is called switch cost (SC). Researchers have recently used several kinds of task-switching paradigms to uncover neural mechanisms underlying the SC. Task-set reconfiguration and passive dissipation of a previously relevant task-set have been reported to contribute to the cost of task switching. Methodology/Principal Findings An unpredictable cued task-switching paradigm was used, during which subjects were instructed to switch between a color and an orientation discrimination task. Electroencephalography (EEG) and behavioral measures were recorded in 14 subjects. Response-stimulus interval (RSI) and cue-stimulus interval (CSI) were manipulated with short and long intervals, respectively. Switch trials delayed reaction times (RTs) and increased error rates compared with repeat trials. The SC of RTs was smaller in the long CSI condition. For cue-locked waveforms, switch trials generated a larger parietal positive event-related potential (ERP), and a larger slow parietal positivity compared with repeat trials in the short and long CSI condition. Neural SC of cue-related ERP positivity was smaller in the long RSI condition. For stimulus-locked waveforms, a larger switch-related central negative ERP component was observed, and the neural SC of the ERP negativity was smaller in the long CSI. Results of standardized low resolution electromagnetic tomography (sLORETA) for both ERP positivity and negativity showed that switch trials evoked larger activation than repeat trials in dorsolateral prefrontal cortex (DLPFC) and posterior parietal cortex (PPC). Conclusions/Significance The results provide evidence that both RSI and CSI modulate the neural activities in the process of task-switching, but that these have a differential role during task-set reconfiguration and passive dissipation of a previously relevant task-set. PMID:22860090

  10. Neural mechanisms underlying the cost of task switching: an ERP study.

    Directory of Open Access Journals (Sweden)

    Ling Li

    Full Text Available BACKGROUND: When switching from one task to a new one, reaction times are prolonged. This phenomenon is called switch cost (SC. Researchers have recently used several kinds of task-switching paradigms to uncover neural mechanisms underlying the SC. Task-set reconfiguration and passive dissipation of a previously relevant task-set have been reported to contribute to the cost of task switching. METHODOLOGY/PRINCIPAL FINDINGS: An unpredictable cued task-switching paradigm was used, during which subjects were instructed to switch between a color and an orientation discrimination task. Electroencephalography (EEG and behavioral measures were recorded in 14 subjects. Response-stimulus interval (RSI and cue-stimulus interval (CSI were manipulated with short and long intervals, respectively. Switch trials delayed reaction times (RTs and increased error rates compared with repeat trials. The SC of RTs was smaller in the long CSI condition. For cue-locked waveforms, switch trials generated a larger parietal positive event-related potential (ERP, and a larger slow parietal positivity compared with repeat trials in the short and long CSI condition. Neural SC of cue-related ERP positivity was smaller in the long RSI condition. For stimulus-locked waveforms, a larger switch-related central negative ERP component was observed, and the neural SC of the ERP negativity was smaller in the long CSI. Results of standardized low resolution electromagnetic tomography (sLORETA for both ERP positivity and negativity showed that switch trials evoked larger activation than repeat trials in dorsolateral prefrontal cortex (DLPFC and posterior parietal cortex (PPC. CONCLUSIONS/SIGNIFICANCE: The results provide evidence that both RSI and CSI modulate the neural activities in the process of task-switching, but that these have a differential role during task-set reconfiguration and passive dissipation of a previously relevant task-set.

  11. Common and distinct neural mechanisms of attentional switching and response conflict.

    Science.gov (United States)

    Kim, Chobok; Johnson, Nathan F; Gold, Brian T

    2012-08-21

    The human capacities for overcoming prepotent actions and flexibly switching between tasks represent cornerstones of cognitive control. Functional neuroimaging has implicated a diverse set of brain regions contributing to each of these cognitive control processes. However, the extent to which attentional switching and response conflict draw on shared or distinct neural mechanisms remains unclear. The current study examined the neural correlates of response conflict and attentional switching using event-related functional magnetic resonance imaging (fMRI) and a fully randomized 2×2 design. We manipulated an arrow-word version of the Stroop task to measure conflict and switching in the context of a single task decision, in response to a common set of stimuli. Under these common conditions, both behavioral and imaging data showed significant main effects of conflict and switching but no interaction. However, conjunction analyses identified frontal regions involved in both switching and response conflict, including the dorsal anterior cingulate cortex (dACC) and left inferior frontal junction. In addition, connectivity analyses demonstrated task-dependent functional connectivity patterns between dACC and inferior temporal cortex for attentional switching and between dACC and posterior parietal cortex for response conflict. These results suggest that the brain makes use of shared frontal regions, but can dynamically modulate the connectivity patterns of some of those regions, to deal with attentional switching and response conflict. Copyright © 2012 Elsevier B.V. All rights reserved.

  12. A novel micro/nano 1 × 4 mechanical optical switch

    Science.gov (United States)

    Lin, Wu-Lang; Fan, Kuang-Chao; Chiang, Li-Hung; Yang, Yao-Joe; Kuo, Wen-Cheng; Chung, Tien-Tung

    2006-07-01

    This paper presents the design, fabrication and testing of a novel 1 × 4 mechanical optical switch, whose components are fabricated by precision machining and MEMS technologies. The switch uses two relays as the two actuators whose switching direction is perpendicular to each other by an orthogonal arrangement. We adopt a direct fiber-to-fiber principle that aligns the input fiber directly to four output fibers. This configuration eliminates the use of traditional parts such as collimators, turning mirrors or prisms. In addition, due to the use of a fiber holder, the fiber position errors could be reduced to less than 0.27 µm using the two-stage geometry error reduction principle. We have successfully developed a simple and low-cost switch, which performs like most of the 1 × 4 mechanical optical switches that dominate the optics communications market. The advantages of our switch are a small size (20 × 20 × 25 mm3), low cost, high reliability, and the latching function does not need external force for maintaining the state. The experimental results showed that the insertion losses of the four channels are ch1: 0.68 dB, ch2: 1.49 dB, ch3: 0.71 dB and ch4: 0.97 dB. The switching time is 5 ms, the crosstalk <=80 dB. The reliability tests of the insertion loss after 10 000 cycles in four channels yield ch1: 1.67 dB, ch2: 1.63 dB, ch3: 0.75 dB and ch4: 0.98 dB. The size and the cost of our 1 × 4 mechanical optical switch are only about 1/5-1/10 and 1/10 of the series-connect-type and prism-type switches, respectively.

  13. On a mechanism of switching off low-hybrid run away currents in tokamak devices

    International Nuclear Information System (INIS)

    Budnikov, V.N.; Esipov, L.A.; Irzak, M.A.

    1990-01-01

    The problem of the generation of low-hybrid run-away currents (LR) in tokamak devices is described. The mechanism of switching off LRCs is considered. Qualitative representation of the density limit, the transitions of which stops the generation of currents, is given

  14. Mechanisms of current conduction in Pt/BaTiO3/Pt resistive switching cell

    International Nuclear Information System (INIS)

    Pan, R.K.; Zhang, T.J.; Wang, J.Y.; Wang, J.Z.; Wang, D.F.; Duan, M.G.

    2012-01-01

    The 80-nm-thickness BaTiO 3 (BT) thin film was prepared on the Pt/Ti/SiO 2 /Si substrate by the RF magnetron sputtering technique. The Pt/BT/Pt/Ti/SiO 2 /Si structure was investigated using X-ray diffraction and scanning electron microscopy. The current–voltage characteristic measurements were performed. The bipolar resistive switching behavior was found in the Pt/BT/Pt cell. The current–voltage curves were well fitted in different voltage regions at the high resistance state (HRS) and the low resistance state (LRS), respectively. The conduction mechanisms are concluded to be Ohmic conduction and Schottky emission at the LRS, while space-charge-limited conduction and Poole–Frenkel emission at the HRS. The electroforming and switching processes were explained in terms of the valence change mechanism, in which oxygen vacancies play a key role in forming conducting paths. - Highlights: ►Pt/BaTiO 3 /Pt cell shows the bipolar resistive switching behavior. ►The current–voltage curves were well fitted for different conduction mechanisms. ►The electroforming and switching processes were explained.

  15. Resistive switching in ZrO2 films: physical mechanism for filament formation and dissolution

    International Nuclear Information System (INIS)

    Parreira, Pedro; McVitie, Stephen; MacLaren, D A

    2014-01-01

    Resistive switching devices, also called memristors, have attracted much attention due to their potential memory, logic and even neuromorphic applications. Multiple physical mechanisms underpin the non-volatile switching process and are ultimately believed to give rise to the formation and dissolution of a discrete conductive filament within the active layer. However, a detailed nanoscopic analysis that fully explains all the contributory events remains to be presented. Here, we present aspects of the switching events that are correlated back to tunable details of the device fabrication process. Transmission electron microscopy and atomically resolved electron energy loss spectroscopy (EELS) studies of electrically stressed devices will then be presented, with a view to understanding the driving forces behind filament formation and dissolution

  16. Resistive switching properties and physical mechanism of europium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Wei; Zou, Changwei [School of Physical Science and Technology, Lingnan Normal University, Zhanjiang (China); Bao, Dinghua [State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou (China)

    2017-09-15

    A forming-free resistive switching effect was obtained in Pt/Eu{sub 2}O{sub 3}/Pt devices in which the Eu{sub 2}O{sub 3} thin films were fabricated by a chemical solution deposition method. The devices show unipolar resistive switching with excellent switching parameters, such as high resistance ratio (10{sup 7}), stable resistance values (read at 0.2 V), low reset voltage, good endurance, and long retention time (up to 10{sup 4} s). On the basis of the analysis of the current-voltage (I-V) curves and the resistance-temperature dependence, it can be concluded that the dominant conducting mechanisms were ohmic behavior and Schottky emission at low resistance state and high resistance state, respectively. The resistive switching behavior could be explained by the formation and rupture of conductive filament, which is related to the abundant oxygen vacancies generated in the deposition process. This work demonstrates the great potential opportunities of Eu{sub 2}O{sub 3} thin film in resistive switching memory applications, which might possess distinguished properties. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

    Science.gov (United States)

    Chen, Zibin; Hong, Liang; Wang, Feifei; An, Xianghai; Wang, Xiaolin; Ringer, Simon; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

    2017-12-01

    Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. Here, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb (Mg1 /3Nb2 /3)O3-33 % PbTiO3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.

  18. A new coupling mechanism between two graphene electron waveguides for ultrafast switching

    Science.gov (United States)

    Huang, Wei; Liang, Shi-Jun; Kyoseva, Elica; Ang, Lay Kee

    2018-03-01

    In this paper, we report a novel coupling between two graphene electron waveguides, in analogy the optical waveguides. The design is based on the coherent quantum mechanical tunneling of Rabi oscillation between the two graphene electron waveguides. Based on this coupling mechanism, we propose that it can be used as an ultrafast electronic switching device. Based on a modified coupled mode theory, we construct a theoretical model to analyze the device characteristics, and predict that the switching speed is faster than 1 ps and the on-off ratio exceeds 106. Due to the long mean free path of electrons in graphene at room temperature, the proposed design avoids the limitation of low temperature operation required in the traditional design by using semiconductor quantum-well structure. The layout of our design is similar to that of a standard complementary metal-oxide-semiconductor transistor that should be readily fabricated with current state-of-art nanotechnology.

  19. Non-switching to switching transferring mechanism investigation for Ag/SiO x /p-Si structure with SiO x deposited by HWCVD

    Science.gov (United States)

    Liu, Yanhong; Wang, Ruoying; Li, Zhongyue; Wang, Song; Huang, Yang; Peng, Wei

    2018-04-01

    We proposed and fabricated an Ag/SiO x /p-Si sandwich structure, in which amorphous SiO x films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I–V properties of this structure transfer from non-switching to switching operation as the SiO x deposition temperature increased. The device with SiO x deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiO x active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I–V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiO x film deposition technology by conducting HWCVD from TEOS.

  20. A complementary switching mechanism for organic memory devices to regulate the conductance of binary states

    Science.gov (United States)

    Vyas, Giriraj; Dagar, Parveen; Sahu, Satyajit

    2016-06-01

    We have fabricated an organic non-volatile memory device wherein the ON/OFF current ratio has been controlled by varying the concentration of a small organic molecule, 2,3-Dichloro-5,6-dicyano-p-benzoquinone (DDQ), in an insulating matrix of a polymer Poly(4-vinylphenol) (PVP). A maximum ON-OFF ratio of 106 is obtained when the concentration of DDQ is half or 10 wt. % of PVP. In this process, the switching direction for the devices has also been altered, indicating the disparity in conduction mechanism. Conduction due to metal filament formation through the active material and the voltage dependent conformational change of the organic molecule seem to be the motivation behind the gradual change in the switching direction.

  1. Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

    International Nuclear Information System (INIS)

    Huang Da; Wu Jun-Jie; Tang Yu-Hua

    2014-01-01

    With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model

  2. Switching deformation mode and mechanisms during subduction of continental crust: a case study from Alpine Corsica

    Directory of Open Access Journals (Sweden)

    G. Molli

    2017-07-01

    Full Text Available The switching in deformation mode (from distributed to localized and mechanisms (viscous versus frictional represent a relevant issue in the frame of crustal deformation, being also connected with the concept of the brittle–ductile transition and seismogenesis. In a subduction environment, switching in deformation mode and mechanisms and scale of localization may be inferred along the subduction interface, in a transition zone between the highly coupled (seismogenic zone and decoupled deeper aseismic domain (stable slip. However, the role of brittle precursors in nucleating crystal-plastic shear zones has received more and more consideration being now recognized as fundamental in some cases for the localization of deformation and shear zone development, thus representing a case in which switching deformation mechanisms and scale and style of localization (deformation mode interact and relate to each other. This contribution analyses an example of a millimetre-scale shear zone localized by brittle precursor formed within a host granitic protomylonite. The studied structures, developed in ambient pressure–temperature (P–T conditions of low-grade blueschist facies (temperature T of ca. 300 °C and pressure P ≥ 0. 70 GPa during involvement of Corsican continental crust in the Alpine subduction. We used a multidisciplinary approach by combining detailed microstructural and petrographic analyses, crystallographic preferred orientation by electron backscatter diffraction (EBSD, and palaeopiezometric studies on a selected sample to support an evolutionary model and deformation path for subducted continental crust. We infer that the studied structures, possibly formed by transient instability associated with fluctuations of pore fluid pressure and episodic strain rate variations, may be considered as a small-scale example of fault behaviour associated with a cycle of interseismic creep and coseismic rupture or a new analogue for

  3. A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches

    International Nuclear Information System (INIS)

    Basu, A; Adams, G G; McGruer, N E

    2016-01-01

    Direct contact, ohmic MEMS switches for RF applications have several advantages over other conventional switching devices. Advantages include lower insertion loss, higher isolation, and better switching figure-of-merit (cut-off frequency). The most important aspect of a direct-contact RF MEMS switch is the metal microcontact which can dictate the lifetime and reliability of the switch. Therefore, an understanding of contact reliability is essential for developing robust MEMS switches. This paper discusses and reviews the most important work done over the past couple of decades toward understanding ohmic micro-contacts. We initially discuss the contact mechanics and multi-physics models for studying Hertzian and multi-asperity contacts. We follow this with a discussion on models and experiments for studying adhesion. We then discuss experimental setups and the development of contact test stations by various groups for accelerated testing of microcontacts, as well as for analysis of contact reliability issues. Subsequently, we analyze a number of material transfer mechanisms in microcontacts under hot and cold switching conditions. We finally review the material properties that can help determine the selection of contact materials. A trade-off between contact resistance and high reliability is almost always necessary during selection of contact material; this paper discusses how the choice of materials can help address such trade-offs. (paper)

  4. Insight into the molecular switch mechanism of human Rab5a from molecular dynamics simulations

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jing-Fang, E-mail: jfwang@gordonlifescience.org [Key Laboratory of Systems Biology, Shanghai Institutes for Biological Sciences, Chinese Academy of Sciences, Shanghai 200031 (China); Shanghai Center for Bioinformation Technology, 100 Qinzhou Road, Shanghai 200235 (China); Gordon Life Science Institute, 13784 Torrey Del Mar Drive, San Diego, CA 92130 (United States); Chou, Kuo-Chen [Gordon Life Science Institute, 13784 Torrey Del Mar Drive, San Diego, CA 92130 (United States)

    2009-12-18

    Rab5a is currently a most interesting target because it is responsible for regulating the early endosome fusion in endocytosis and possibly the budding process. We utilized longtime-scale molecular dynamics simulations to investigate the internal motion of the wild-type Rab5a and its A30P mutant. It was observed that, after binding with GTP, the global flexibility of the two proteins is increasing, while the local flexibility in their sensitive sites (P-loop, switch I and II regions) is decreasing. Also, the mutation of Ala30 to Pro30 can cause notable flexibility variations in the sensitive sites. However, this kind of variations is dramatically reduced after binding with GTP. Such a remarkable feature is mainly caused by the water network rearrangements in the sensitive sites. These findings might be of use for revealing the profound mechanism of the displacements of Rab5a switch regions, as well as the mechanism of the GDP dissociation and GTP association.

  5. Electroforming and Switching in Oxides of Transition Metals: The Role of Metal Insulator Transition in the Switching Mechanism

    Science.gov (United States)

    Chudnovskii, F. A.; Odynets, L. L.; Pergament, A. L.; Stefanovich, G. B.

    1996-02-01

    Electroforming and switching effects in sandwich structures based on anodic films of transition metal oxides (V, Nb, Ti, Fe, Ta, W, Zr, Hf, Mo) have been studied. After being electroformed, some materials exhibited current-controlled negative resistance with S-shapedV-Icharacteristics. For V, Fe, Ti, and Nb oxides, the temperature dependences of the threshold voltage have been measured. As the temperature increased,Vthdecreased to zero at a critical temperatureT0, which depended on the film material. Comparison of theT0values with the temperatures of metal-insulator phase transition for some compounds (Tt= 120 K for Fe3O4, 340 K for VO2, ∼500 K for Ti2O3, and 1070 K for NbO2) showed that switching was related to the transition in the applied electric field. Channels consisting of the above-mentioned lower oxides were formed in the initial anodic films during the electroforming. The possibility of formation of these oxides with a metal-insulator transition was confirmed by thermodynamic calculations.

  6. Q-switched laser removal of tattoos: a clinical and spectroscopic investigation of the mechanism

    Science.gov (United States)

    Siomos, Konstadinos; Bailey, Raymond T.; Cruickshank, Frank R.; Murphy, Michael

    1996-01-01

    The liquid phase spectra of tatoo pigments are shown to be unreliable as a basis for mechanistic deductions. The reflectance spectra of the solids from 2000 nm to 500 nm (5000 to 20,000 cm-1) are shown to accurately assess the relative loss of laser light for different pigments and to be useful in examining these to check for similarities in the pigments. The absorbance differences between the pigments are shown to be largely irrelevant in assessing the ease of tatoo removal by laser radiation of a variety of wavelengths. A multiphoton absorption mechanism with its concomitant shock wave is proposed to be responsible for the reduction of pigment particles to small sizes which the lymph system can remove. The different behavior of blue and green tattoos, treated by Q-switched ruby and Nd:YAG lasers, is attributed to the particle aggregation size of the pigments in the tattoo.

  7. A tweaking principle for executive control: neuronal circuit mechanism for rule-based task switching and conflict resolution.

    Science.gov (United States)

    Ardid, Salva; Wang, Xiao-Jing

    2013-12-11

    A hallmark of executive control is the brain's agility to shift between different tasks depending on the behavioral rule currently in play. In this work, we propose a "tweaking hypothesis" for task switching: a weak rule signal provides a small bias that is dramatically amplified by reverberating attractor dynamics in neural circuits for stimulus categorization and action selection, leading to an all-or-none reconfiguration of sensory-motor mapping. Based on this principle, we developed a biologically realistic model with multiple modules for task switching. We found that the model quantitatively accounts for complex task switching behavior: switch cost, congruency effect, and task-response interaction; as well as monkey's single-neuron activity associated with task switching. The model yields several testable predictions, in particular, that category-selective neurons play a key role in resolving sensory-motor conflict. This work represents a neural circuit model for task switching and sheds insights in the brain mechanism of a fundamental cognitive capability.

  8. Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Menke, Tobias

    2009-11-27

    To overcome the physical limits of todays memory technologies new concepts are needed. The resistive random access memory (RRAM), which bases on a nonvolatile and repeatable change of the resistance by external electrical stimuli, seems to be one promising candidate. Within the scope of this work, the model system Strontium titanate (SrTiO{sub 3}) has been investigated to get a deeper understanding of the underlying physical mechanism related to the resistance change. The electrical properties of SrTiO{sub 3} (STO) can be modulated from a band insulator to metallic conduction by a self-doping with oxygen vacancies which act as shallow donors. A local accumulation or depletion of oxygen vacancies at the vicinity of the surface will lead to a local redox process which is responsible for the resistance change. To study the influence of the interfaces on the switching properties of SrTiO{sub 3} thin films, epitaxial films of Fe-doped SrTiO{sub 3} were grown on different bottom electrodes (SrRuO{sub 3}, LaNiO{sub 3} und Nb:STO) by a ''Pulsed Laser Deposition'' technique. An atomic force microscope equipped with a conductive tip (LC-AFM) allowed studying the conductivity of the deposited films on the nanometer scale. Resistive switching of lateral structures smaller than {proportional_to}5 nm could be realized which represents the potential of this material for a further downscaling of RRAM devices. The deposition of top electrodes, made of Platinum or Titanium, allowed the electrical characterization of metal-insulator-metal (MIM) structures. An extensive investigation of pristine MIM-devices by impedance spectroscopy showed the big impact of the metal-insulator interface on the overall device resistance. Furthermore, a chemical polarization was studied by dynamical current sweeps and identified as a volatile resistance variation. Usually a forming procedure is needed to ''enable'' the resistive switching properties in MIM devices

  9. Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO3 thin films

    International Nuclear Information System (INIS)

    Menke, Tobias

    2009-01-01

    To overcome the physical limits of todays memory technologies new concepts are needed. The resistive random access memory (RRAM), which bases on a nonvolatile and repeatable change of the resistance by external electrical stimuli, seems to be one promising candidate. Within the scope of this work, the model system Strontium titanate (SrTiO 3 ) has been investigated to get a deeper understanding of the underlying physical mechanism related to the resistance change. The electrical properties of SrTiO 3 (STO) can be modulated from a band insulator to metallic conduction by a self-doping with oxygen vacancies which act as shallow donors. A local accumulation or depletion of oxygen vacancies at the vicinity of the surface will lead to a local redox process which is responsible for the resistance change. To study the influence of the interfaces on the switching properties of SrTiO 3 thin films, epitaxial films of Fe-doped SrTiO 3 were grown on different bottom electrodes (SrRuO 3 , LaNiO 3 und Nb:STO) by a ''Pulsed Laser Deposition'' technique. An atomic force microscope equipped with a conductive tip (LC-AFM) allowed studying the conductivity of the deposited films on the nanometer scale. Resistive switching of lateral structures smaller than ∝5 nm could be realized which represents the potential of this material for a further downscaling of RRAM devices. The deposition of top electrodes, made of Platinum or Titanium, allowed the electrical characterization of metal-insulator-metal (MIM) structures. An extensive investigation of pristine MIM-devices by impedance spectroscopy showed the big impact of the metal-insulator interface on the overall device resistance. Furthermore, a chemical polarization was studied by dynamical current sweeps and identified as a volatile resistance variation. Usually a forming procedure is needed to ''enable'' the resistive switching properties in MIM devices. The electroforming of these devices was extensively studied and could be

  10. The nanocoherer: an electrically and mechanically resettable resistive switching device based on gold clusters assembled on paper

    Science.gov (United States)

    Minnai, Chloé; Mirigliano, Matteo; Brown, Simon A.; Milani, Paolo

    2018-03-01

    We report the realization of a resettable resistive switching device based on a nanostructured film fabricated by supersonic cluster beam deposition of gold clusters on plain paper substrates. Through the application of suitable voltage ramps, we obtain, in the same device, either a complex pattern of resistive switchings, or reproducible and stable switchings between low resistance and high resistance states, with an amplitude up to five orders of magnitude. Our device retains a state of internal resistance following the history of the applied voltage similar to that reported for memristors. The two different switching regimes in the same device are both stable, the transition between them is reversible, and it can be controlled by applying voltage ramps or by mechanical deformation of the substrate. The device behavior can be related to the formation, growth and breaking of junctions between the loosely aggregated gold clusters forming the nanostructured films. The fact that our cluster-assembled device is mechanically resettable suggests that it can be considered as the analog of the coherer: a switching device based on metallic powders used for the first radio communication system.

  11. Switching mechanism due to the spontaneous emission cancellation in photonic band gap materials doped with nano-particles

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R. [Department of Physics and Astronomy, University of Western Ontario, London, Canada N6A 3K7 (Canada)]. E-mail: msingh@uwo.ca

    2007-03-26

    We have investigated the switching mechanism due to the spontaneous emission cancellation in a photonic band gap (PBG) material doped with an ensemble of four-level nano-particles. The effect of the dipole-dipole interaction has also been studied. The linear susceptibility has been calculated in the mean field theory. Numerical simulations for the imaginary susceptibility are performed for a PBG material which is made from periodic dielectric spheres. It is predicted that the system can be switched between the absorbing state and the non-absorbing state by changing the resonance energy within the energy bands of the photonic band gap material.0.

  12. Dynamic fluctuations provide the basis of a conformational switch mechanism in apo cyclic AMP receptor protein.

    Directory of Open Access Journals (Sweden)

    Burcu Aykaç Fas

    Full Text Available Escherichia coli cyclic AMP Receptor Protein (CRP undergoes conformational changes with cAMP binding and allosterically promotes CRP to bind specifically to the DNA. In that, the structural and dynamic properties of apo CRP prior to cAMP binding are of interest for the comprehension of the activation mechanism. Here, the dynamics of apo CRP monomer/dimer and holo CRP dimer were studied by Molecular Dynamics (MD simulations and Gaussian Network Model (GNM. The interplay of the inter-domain hinge with the cAMP and DNA binding domains are pre-disposed in the apo state as a conformational switch in the CRP's allosteric communication mechanism. The hinge at L134-D138 displaying intra- and inter-subunit coupled fluctuations with the cAMP and DNA binding domains leads to the emergence of stronger coupled fluctuations between the two domains and describes an on state. The flexible regions at K52-E58, P154/D155 and I175 maintain the dynamic coupling of the two domains. With a shift in the inter-domain hinge position towards the N terminus, nevertheless, the latter correlations between the domains loosen and become disordered; L134-D138 dynamically interacts only with the cAMP and DNA binding domains of its own subunit, and an off state is assumed. We present a mechanistic view on how the structural dynamic units are hierarchically built for the allosteric functional mechanism; from apo CRP monomer to apo-to-holo CRP dimers.

  13. Dynamic processes of domain switching in lead zirconate titanate under cyclic mechanical loading by in situ neutron diffraction

    International Nuclear Information System (INIS)

    Pojprapai, Soodkhet; Luo, Zhenhua; Clausen, Bjorn; Vogel, Sven C.; Brown, Donald W.; Russel, Jennifer; Hoffman, Mark

    2010-01-01

    The performance of ferroelectric ceramics is governed by the ability of domains to switch. A decrease in the switching ability can lead to degradation of the materials and failure of ferroelectric devices. In this work the dynamic properties of domain reorientation are studied. In situ time-of-flight neutron diffraction is used to probe the evolution of ferroelastic domain texture under mechanical cyclic loading in bulk lead zirconate titanate ceramics. The high sensitivity of neutron diffraction to lattice strain is exploited to precisely analyze the change of domain texture and strain through a full-pattern Rietveld method. These results are then used to construct a viscoelastic model, which explains the correlation between macroscopic phenomena (i.e. creep and recovered deformation) and microscopic dynamic behavior (i.e. ferroelastic switching, lattice strain).

  14. MATHEMATICAL MODEL OF A QUICK-DRIVING ACTUATOR OF AN AUTOMATIC SWITCH WITH AN INSTANT-DYNAMIC AND BISTABLE MECHANISM

    Directory of Open Access Journals (Sweden)

    E. I. BAIDA

    2018-05-01

    Full Text Available Purpose. Development of a mathematical model of an induction-dynamic drive of a switch with two coils, working with a bistable mechanism, which ensures the fixation of the instant-dynamic mechanism (IDM in trajectory extreme positions of the contact system. Methodology. The solution of the problems posed in the work was carried out using methods for calculating the electromagnetic field, finite elements, theoretical mechanics, and solving differential equations. Findings. The mathematical model of quick-driving actuator as part of instant dynamic and bistable mechanism was developed. It was based on electrical circuit’s electromagnetic equations and kinematic movements of the switching mechanism. Advantage of the given model is possibility of a breaker drive dynamic analysis basing on data of a contact pressure, pretravel and snatch gap. Initial data of the model formulation were outer circuit inductance, resistance of coils, which calculated on conductor cross-section and coils configuration. Initial conditions corresponded by Dirichlet conditions. Mathematical model equations system was calculated in cylindrical coordinate system. Problem was solved with the help ComsolMultiphysics system. Motion of the IDM movement part was modeled by deformation of a computational grid. Spring force and stress in a bistable mechanism construction were determined by initial data of a contact pressure, pretravel and snatch gap. Graphs by calculation data are shown, which allow to analyze of springing elements chose and make necessary adjustments on design stage and debugging construction. Operation parameters of mechanism work on IDM switch on and switch off stages were calculated. Value of movement, motion speed of armature breaker, currents of accelerating and retarding coils, summed electromagnetic and opposite force were figured. Originality. The mathematical model of quick-driving actuator as part of instant-dynamic and bistable mechanism was developed

  15. Structures of the NLRP14 pyrin domain reveal a conformational switch mechanism regulating its molecular interactions

    International Nuclear Information System (INIS)

    Eibl, Clarissa; Hessenberger, Manuel; Wenger, Julia; Brandstetter, Hans

    2014-01-01

    Pyrin domains (PYDs) recruit downstream effector molecules in NLR signalling. A specific charge-relay system suggests a the formation of a signalling complex involving a PYD dimer. The cytosolic tripartite NLR receptors serve as important signalling platforms in innate immunity. While the C-terminal domains act as sensor and activation modules, the N-terminal death-like domain, e.g. the CARD or pyrin domain, is thought to recruit downstream effector molecules by homotypic interactions. Such homotypic complexes have been determined for all members of the death-domain superfamily except for pyrin domains. Here, crystal structures of human NLRP14 pyrin-domain variants are reported. The wild-type protein as well as the clinical D86V mutant reveal an unexpected rearrangement of the C-terminal helix α6, resulting in an extended α5/6 stem-helix. This reordering mediates a novel symmetric pyrin-domain dimerization mode. The conformational switching is controlled by a charge-relay system with a drastic impact on protein stability. How the identified charge relay allows classification of NLRP receptors with respect to distinct recruitment mechanisms is discussed

  16. CONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODE

    KAUST Repository

    Abdul Rahim, Farhan

    2014-01-01

    MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions

  17. Comprehensive theory of the Deans' switch as a variable flow splitter: fluid mechanics, mass balance, and system behavior.

    Science.gov (United States)

    Boeker, Peter; Leppert, Jan; Mysliwietz, Bodo; Lammers, Peter Schulze

    2013-10-01

    The Deans' switch is an effluent switching device based on controlling flows of carrier gas instead of mechanical valves in the analytical flow path. This technique offers high inertness and a wear-free operation. Recently new monolithic microfluidic devices have become available. In these devices the whole flow system is integrated into a small metal device with low thermal mass and leak-tight connections. In contrast to a mechanical valve-based system, a flow-controlled system is more difficult to calculate. Usually the Deans' switch is used to switch one inlet to one of two outlets, by means of two auxiliary flows. However, the Deans' switch can also be used to deliver the GC effluent with a specific split ratio to both outlets. The calculation of the split ratio of the inlet flow to the two outlets is challenging because of the asymmetries of the flow resistances. This is especially the case, if one of the outlets is a vacuum device, such as a mass spectrometer, and the other an atmospheric detector, e.g. a flame ionization detector (FID) or an olfactory (sniffing) port. The capillary flows in gas chromatography are calculated with the Hagen-Poiseuille equation of the laminar, isothermal and compressible flow in circular tubes. The flow resistances in the new microfluidic devices have to be calculated with the corresponding equation for rectangular cross-section microchannels. The Hagen-Poiseuille equation underestimates the flow to a vacuum outlet. A corrected equation originating from the theory of rarefied flows is presented. The calculation of pressures and flows of a Deans' switch based chromatographic system is done by the solution of mass balances. A specific challenge is the consideration of the antidiffusion resistor between the two auxiliary gas lines of the Deans' switch. A full solution for the calculation of the Deans' switch including this restrictor is presented. Results from validation measurements are in good accordance with the developed

  18. Free microparticles—An inducing mechanism of pre-firing in high pressure gas switches for fast linear transformer drivers

    Science.gov (United States)

    Li, Xiaoang; Pei, Zhehao; Wu, Zhicheng; Zhang, Yuzhao; Liu, Xuandong; Li, Yongdong; Zhang, Qiaogen

    2018-03-01

    Microparticle initiated pre-firing of high pressure gas switches for fast linear transformer drivers (FLTDs) is experimentally and theoretically verified. First, a dual-electrode gas switch equipped with poly-methyl methacrylate baffles is used to capture and collect the microparticles. By analyzing the electrode surfaces and the collecting baffles by a laser scanning confocal microscope, microparticles ranging in size from tens of micrometers to over 100 μm are observed under the typical working conditions of FLTDs. The charging and movement of free microparticles in switch cavity are studied, and the strong DC electric field drives the microparticles to bounce off the electrode. Three different modes of free microparticle motion appear to be responsible for switch pre-firing. (i) Microparticles adhere to the electrode surface and act as a fixed protrusion which distorts the local electric field and initiates the breakdown in the gap. (ii) One particle escapes toward the opposite electrode and causes a near-electrode microdischarge, inducing the breakdown of the residual gap. (iii) Multiple moving microparticles are occasionally in cascade, leading to pre-firing. Finally, as experimental verification, repetitive discharges at ±90 kV are conducted in a three-electrode field-distortion gas switch, with two 8 mm gaps and pressurized with nitrogen. An ultrasonic probe is employed to monitor the bounce signals. In pre-firing incidents, the bounce is detected shortly before the collapse of the voltage waveform, which demonstrates that free microparticles contribute significantly to the mechanism that induces pre-firing in FLTD gas switches.

  19. Free microparticles-An inducing mechanism of pre-firing in high pressure gas switches for fast linear transformer drivers.

    Science.gov (United States)

    Li, Xiaoang; Pei, Zhehao; Wu, Zhicheng; Zhang, Yuzhao; Liu, Xuandong; Li, Yongdong; Zhang, Qiaogen

    2018-03-01

    Microparticle initiated pre-firing of high pressure gas switches for fast linear transformer drivers (FLTDs) is experimentally and theoretically verified. First, a dual-electrode gas switch equipped with poly-methyl methacrylate baffles is used to capture and collect the microparticles. By analyzing the electrode surfaces and the collecting baffles by a laser scanning confocal microscope, microparticles ranging in size from tens of micrometers to over 100 μm are observed under the typical working conditions of FLTDs. The charging and movement of free microparticles in switch cavity are studied, and the strong DC electric field drives the microparticles to bounce off the electrode. Three different modes of free microparticle motion appear to be responsible for switch pre-firing. (i) Microparticles adhere to the electrode surface and act as a fixed protrusion which distorts the local electric field and initiates the breakdown in the gap. (ii) One particle escapes toward the opposite electrode and causes a near-electrode microdischarge, inducing the breakdown of the residual gap. (iii) Multiple moving microparticles are occasionally in cascade, leading to pre-firing. Finally, as experimental verification, repetitive discharges at ±90 kV are conducted in a three-electrode field-distortion gas switch, with two 8 mm gaps and pressurized with nitrogen. An ultrasonic probe is employed to monitor the bounce signals. In pre-firing incidents, the bounce is detected shortly before the collapse of the voltage waveform, which demonstrates that free microparticles contribute significantly to the mechanism that induces pre-firing in FLTD gas switches.

  20. Reversal mechanisms and interactions in magnetic systems: coercivity versus switching field and thermally assisted demagnetization

    Directory of Open Access Journals (Sweden)

    Cebollada, F.

    2005-06-01

    Full Text Available In this paper we present a comparative analysis of the magnetic interactions and reversal mechanisms of two different systems: NdFeB-type alloys with grain sizes in the single domain range and Fe-SiO2 nanocomposites with Fe concentrations above and below the percolation threshold. We evidence that the use of the coercivity as the main parameter to analyse them might be misleading due to the convolution of both reversible and irreversible magnetization variations. We show that the switching field and thermally assisted demagnetization allow a better understanding of these mechanisms since they involve just irreversible magnetization changes. Specifically, the experimental analysis of the coercivity adquisition process for the NdFeB-type system suggests that the magnetization reversal is nucleated at the spin misalignments present due to intergranular exchange interactions. On the other hand, the study of the magnetic viscosity and of the isothermal remanent magnetization (IRM and direct field demagnetization (DCD remanence curves indicates that the dipolar interactions are responsible for the propagation of the switching started at individual particles.

    En este artículo presentamos un análisis comparativo de la influencia de la microestructura a través de las interacciones magnéticas en los mecanismos de inversión de la magnetización en dos sistemas diferentes: aleaciones tipo NdFeB con tamaños de grano en el rango de monodominio y nanocompuestos de Fe-SiO2 con concentraciones de Fe tanto por encima como por debajo del umbral de percolación. Ponemos de manifiesto que el uso del campo coercitivo como parámetro de análisis puede llevar a equívocos debido a la coexistencia de variaciones reversibles e irreversibles de la magnetización. También mostramos que el campo de conmutación y la desimanación térmicamente asistida permiten una mejor comprensión de dichos mecanismos ya que reflejan exclusivamente cambios irreversibles de

  1. Mechanism of polarization switching in wurtzite-structured zinc oxide thin films

    Science.gov (United States)

    Konishi, Ayako; Ogawa, Takafumi; Fisher, Craig A. J.; Kuwabara, Akihide; Shimizu, Takao; Yasui, Shintaro; Itoh, Mitsuru; Moriwake, Hiroki

    2016-09-01

    The properties of a potentially new class of ferroelectric materials based on wurtzite-structured ZnO thin films are examined using the first-principles calculations. Theoretical P-E hysteresis loops were calculated using the fixed-D method for both unstrained and (biaxially) strained single crystals. Ferroelectric polarization switching in ZnO (S.G. P63mc) is shown to occur via an intermediate non-polar structure with centrosymmetric P63/mmc symmetry by displacement of cations relative to anions in the long-axis direction. The calculated coercive electric field (Ec) for polarization switching was estimated to be 7.2 MV/cm for defect-free monocrystalline ZnO. During switching, the short- and long-axis lattice parameters expand and contract, respectively. The large structural distortion required for switching may explain why ferroelectricity in this compound has not been reported experimentally for pure ZnO. Applying an epitaxial tensile strain parallel to the basal plane is shown to be effective in lowering Ec during polarization, with a 5% biaxial expansion resulting in a decrease of Ec to 3.5 MV/cm. Comparison with calculated values for conventional ferroelectric materials suggests that the ferroelectric polarization switching of wurtzite-structured ZnO may be achievable by preparing high-quality ZnO thin films with suitable strain levels and low defect concentrations.

  2. Phenotype switching : tumor cell plasticity as a resistance mechanism and target for therapy

    NARCIS (Netherlands)

    Kemper, K.; de Goeje, P.L.; Peeper, D.S.; van Amerongen, R.

    2014-01-01

    Mutations in BRAF are present in the majority of patients with melanoma, rendering these tumors sensitive to targeted therapy with BRAF and MEK inhibitors. Unfortunately, resistance almost invariably develops. Recently, a phenomenon called "phenotype switching" has been identified as an escape

  3. Non-mechanical optical path switching and its application to dual beam spectroscopy including gas filter correlation radiometry

    Science.gov (United States)

    Sachse, Glen W. (Inventor); Wang, Liang-Guo (Inventor)

    1992-01-01

    A non-mechanical optical switch is developed for alternately switching a monochromatic or quasi-monochromatic light beam along two optical paths. A polarizer polarizes light into a single, e.g., vertical component which is then rapidly modulated into vertical and horizontal components by a polarization modulator. A polarization beam splitter then reflects one of these components along one path and transmits the other along the second path. In the specific application of gas filter correlation radiometry, one path is directed through a vacuum cell and one path is directed through a gas correlation cell containing a desired gas. Reflecting mirrors cause these two paths to intersect at a second polarization beam splitter which reflects one component and transmits the other to recombine them into a polarization modulated beam which can be detected by an appropriate single sensor.

  4. Mechanisms of charge transport and resistive switching in composite films of semiconducting polymers with nanoparticles of graphene and graphene oxide

    Science.gov (United States)

    Berestennikov, A. S.; Aleshin, A. N.

    2017-11-01

    We have investigated the effect of the resistive switching in the composite films based on polyfunctional polymers - PVK, PFD and PVC mixed with particles of Gr and GO with the concentration of ˜ 1 - 3 wt.%. We have developed the solution processed hybrid memory structures based on PVK and GO particles composite films. The effect of the resistive switching in Al/PVK(PFD; PVC):Gr(GO)/ITO/PET structures manifests itself as a sharp change of the electrical resistance from a low-conducting state to a relatively high-conducting state when applying a bias to Al-ITO electrodes of ˜ 0.2-0.4 V. It has been established that a sharp conductivity jump characterized by S-shaped current-voltage curves and the presence of their hysteresis occurs upon applying a voltage pulse to the Au/PVK(PFD; PVC):Gr(GO)/ITO/PET structures, with the switching time in the range from 1 to 30 μs. The mechanism of resistive switching associated with the processes of capture and accumulation of charge carriers by Gr(GO) particles introduced into the matrixes of the PVK polymer due to the reduction/oxidation processes. The possible mechanisms of energy transfer between organic and inorganic components in PVK(PFD; PVC):GO(Gr) films causes increase mobility are discussed. Incorporating of Gr (GO) particles into the polymer matrix is a promising route to enhance the performance of hybrid memory structures, as well as it is an effective medium for memory cells.

  5. Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications

    Science.gov (United States)

    Tian, Liqiang; Shi, Wei; Feng, Qingqing

    2011-11-01

    A spark gap (SG) triggered by a semi-insulating GaAs photoconductive semiconductor switch (PCSS) is presented. Currents as high as 5.6 kA have been generated using the combined switch, which is excited by a laser pulse with energy of 1.8 mJ and under a bias of 4 kV. Based on the transferred-electron effect and gas streamer theory, the breakover characteristics of the combined switch are analyzed. The photoexcited carrier density in the PCSS is calculated. The calculation and analysis indicate that the PCSS breakover is caused by nucleation of the photoactivated avalanching charge domain. It is shown that the high output current is generated by the discharge of a high-energy gas streamer induced by the strong local electric field distortion or by overvoltage of the SG resulting from quenching of the avalanching domain, and periodic oscillation of the current is caused by interaction between the gas streamer and the charge domain. The cycle of the current oscillation is determined by the rise time of the triggering electric pulse generated by the PCSS, the pulse transmission time between the PCSS and the SG, and the streamer transit time in the SG.

  6. Transient-Switch-Signal Suppressor

    Science.gov (United States)

    Bozeman, Richard J., Jr.

    1995-01-01

    Circuit delays transmission of switch-opening or switch-closing signal until after preset suppression time. Used to prevent transmission of undesired momentary switch signal. Basic mode of operation simple. Beginning of switch signal initiates timing sequence. If switch signal persists after preset suppression time, circuit transmits switch signal to external circuitry. If switch signal no longer present after suppression time, switch signal deemed transient, and circuit does not pass signal on to external circuitry, as though no transient switch signal. Suppression time preset at value large enough to allow for damping of underlying pressure wave or other mechanical transient.

  7. Latching micro optical switch

    Science.gov (United States)

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  8. An AAA Motor-Driven Mechanical Switch in Rpn11 Controls Deubiquitination at the 26S Proteasome.

    Science.gov (United States)

    Worden, Evan J; Dong, Ken C; Martin, Andreas

    2017-09-07

    Poly-ubiquitin chains direct protein substrates to the 26S proteasome, where they are removed by the deubiquitinase Rpn11 during ATP-dependent substrate degradation. Rapid deubiquitination is required for efficient degradation but must be restricted to committed substrates that are engaged with the ATPase motor to prevent premature ubiquitin chain removal and substrate escape. Here we reveal the ubiquitin-bound structure of Rpn11 from S. cerevisiae and the mechanisms for mechanochemical coupling of substrate degradation and deubiquitination. Ubiquitin binding induces a conformational switch of Rpn11's Insert-1 loop from an inactive closed state to an active β hairpin. This switch is rate-limiting for deubiquitination and strongly accelerated by mechanical substrate translocation into the AAA+ motor. Deubiquitination by Rpn11 and ubiquitin unfolding by the ATPases are in direct competition. The AAA+ motor-driven acceleration of Rpn11 is therefore important to ensure that poly-ubiquitin chains are removed only from committed substrates and fast enough to prevent their co-degradation. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

    KAUST Repository

    Huang, Yi-Jen; Chao, Shih-Chun; Lien, Der-Hsien; Wen, Cheng-Yen; He, Jr-Hau; Lee, Si-Chen

    2016-01-01

    The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we

  10. A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

    Science.gov (United States)

    Chien, W. C.; Chen, Y. C.; Lai, E. K.; Lee, F. M.; Lin, Y. Y.; Chuang, Alfred T. H.; Chang, K. P.; Yao, Y. D.; Chou, T. H.; Lin, H. M.; Lee, M. H.; Shih, Y. H.; Hsieh, K. Y.; Lu, Chih-Yuan

    2011-03-01

    Tungsten oxide (WO X ) resistive memory (ReRAM), a two-terminal CMOS compatible nonvolatile memory, has shown promise to surpass the existing flash memory in terms of scalability, switching speed, and potential for 3D stacking. The memory layer, WO X , can be easily fabricated by down-stream plasma oxidation (DSPO) or rapid thermal oxidation (RTO) of W plugs universally used in CMOS circuits. Results of conductive AFM (C-AFM) experiment suggest the switching mechanism is dominated by the REDOX (Reduction-oxidation) reaction—the creation of conducting filaments leads to a low resistance state and the rupturing of the filaments results in a high resistance state. Our experimental results show that the reactions happen at the TE/WO X interface. With this understanding in mind, we proposed two approaches to boost the memory performance: (i) using DSPO to treat the RTO WO X surface and (ii) using Pt TE, which forms a Schottky barrier with WO X . Both approaches, especially the latter, significantly reduce the forming current and enlarge the memory window.

  11. Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

    Science.gov (United States)

    Gu, Lei; Fu, Hua-Hua

    2015-12-01

    Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I-V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I-V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems.

  12. Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

    International Nuclear Information System (INIS)

    Gu, Lei; Fu, Hua-Hua

    2015-01-01

    Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I–V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I–V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems. (paper)

  13. Novel failure mechanism and improvement for split-gate trench MOSFET with large current under unclamped inductive switch stress

    Science.gov (United States)

    Tian, Ye; Yang, Zhuo; Xu, Zhiyuan; Liu, Siyang; Sun, Weifeng; Shi, Longxing; Zhu, Yuanzheng; Ye, Peng; Zhou, Jincheng

    2018-04-01

    In this paper, a novel failure mechanism under unclamped inductive switch (UIS) for Split-Gate Trench Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with large current is investigated. The device sample is tested and analyzed in detail. The simulation results demonstrate that the nonuniform potential distribution of the source poly should be responsible for the failure. Three structures are proposed and verified available to improve the device UIS ruggedness by TCAD simulation. The best one of the structures the device with source metal inserting into source poly through contacts in the field oxide is carried out and measured. The results demonstrate that the optimized structure can balance the trade-off between the UIS ruggedness and the static characteristics.

  14. Vestigialization of an allosteric switch: genetic and structural mechanisms for the evolution of constitutive activity in a steroid hormone receptor.

    Directory of Open Access Journals (Sweden)

    Jamie T Bridgham

    2014-01-01

    Full Text Available An important goal in molecular evolution is to understand the genetic and physical mechanisms by which protein functions evolve and, in turn, to characterize how a protein's physical architecture influences its evolution. Here we dissect the mechanisms for an evolutionary shift in function in the mollusk ortholog of the steroid hormone receptors (SRs, a family of biologically essential transcription factors. In vertebrates, the activity of SRs allosterically depends on binding a hormonal ligand; in mollusks, however, the SR ortholog (called ER, because of high sequence similarity to vertebrate estrogen receptors activates transcription in the absence of ligand and does not respond to steroid hormones. To understand how this shift in regulation evolved, we combined evolutionary, structural, and functional analyses. We first determined the X-ray crystal structure of the ER of the Pacific oyster Crassostrea gigas (CgER, and found that its ligand pocket is filled with bulky residues that prevent ligand occupancy. To understand the genetic basis for the evolution of mollusk ERs' unique functions, we resurrected an ancient SR progenitor and characterized the effect of historical amino acid replacements on its functions. We found that reintroducing just two ancient replacements from the lineage leading to mollusk ERs recapitulates the evolution of full constitutive activity and the loss of ligand activation. These substitutions stabilize interactions among key helices, causing the allosteric switch to become "stuck" in the active conformation and making activation independent of ligand binding. Subsequent changes filled the ligand pocket without further affecting activity; by degrading the allosteric switch, these substitutions vestigialized elements of the protein's architecture required for ligand regulation and made reversal to the ancestral function more complex. These findings show how the physical architecture of allostery enabled a few large

  15. Vestigialization of an Allosteric Switch: Genetic and Structural Mechanisms for the Evolution of Constitutive Activity in a Steroid Hormone Receptor

    Science.gov (United States)

    Bridgham, Jamie T.; Keay, June; Ortlund, Eric A.; Thornton, Joseph W.

    2014-01-01

    An important goal in molecular evolution is to understand the genetic and physical mechanisms by which protein functions evolve and, in turn, to characterize how a protein's physical architecture influences its evolution. Here we dissect the mechanisms for an evolutionary shift in function in the mollusk ortholog of the steroid hormone receptors (SRs), a family of biologically essential transcription factors. In vertebrates, the activity of SRs allosterically depends on binding a hormonal ligand; in mollusks, however, the SR ortholog (called ER, because of high sequence similarity to vertebrate estrogen receptors) activates transcription in the absence of ligand and does not respond to steroid hormones. To understand how this shift in regulation evolved, we combined evolutionary, structural, and functional analyses. We first determined the X-ray crystal structure of the ER of the Pacific oyster Crassostrea gigas (CgER), and found that its ligand pocket is filled with bulky residues that prevent ligand occupancy. To understand the genetic basis for the evolution of mollusk ERs' unique functions, we resurrected an ancient SR progenitor and characterized the effect of historical amino acid replacements on its functions. We found that reintroducing just two ancient replacements from the lineage leading to mollusk ERs recapitulates the evolution of full constitutive activity and the loss of ligand activation. These substitutions stabilize interactions among key helices, causing the allosteric switch to become “stuck” in the active conformation and making activation independent of ligand binding. Subsequent changes filled the ligand pocket without further affecting activity; by degrading the allosteric switch, these substitutions vestigialized elements of the protein's architecture required for ligand regulation and made reversal to the ancestral function more complex. These findings show how the physical architecture of allostery enabled a few large-effect mutations

  16. A novel mechanism for switching a neural system from one state to another

    Directory of Open Access Journals (Sweden)

    Chethan Pandarinath

    2010-03-01

    Full Text Available An animal’s ability to rapidly adjust to new conditions is essential to its survival. The nervous system, then, must be built with the flexibility to adjust, or shift, its processing capabilities on the fly. To understand how this flexibility comes about, we tracked a well-known behavioral shift, a visual integration shift, down to its underlying circuitry, and found that it is produced by a novel mechanism – a change in gap junction coupling that can turn a cell class on and off. The results showed that the turning on and off of a cell class shifted the circuit’s behavior from one state to another, and, likewise, the animal’s behavior. The widespread presence of similar gap junction-coupled networks in the brain suggests that this mechanism may underlie other behavioral shifts as well.

  17. Mechanical strain can switch the sign of quantum capacitance from positive to negative.

    Science.gov (United States)

    Hanlumyuang, Yuranan; Li, Xiaobao; Sharma, Pradeep

    2014-11-14

    Quantum capacitance is a fundamental quantity that can directly reveal many-body interactions among electrons and is expected to play a critical role in nanoelectronics. One of the many tantalizing recent physical revelations about quantum capacitance is that it can possess a negative value, hence allowing for the possibility of enhancing the overall capacitance in some particular material systems beyond the scaling predicted by classical electrostatics. Using detailed quantum mechanical simulations, we found an intriguing result that mechanical strains can tune both signs and values of quantum capacitance. We used a small coaxially gated carbon nanotube as a paradigmatical capacitor system and showed that, for the range of mechanical strain considered, quantum capacitance can be adjusted from very large positive to very large negative values (in the order of plus/minus hundreds of attofarads), compared to the corresponding classical geometric value (0.31035 aF). This finding opens novel avenues in designing quantum capacitance for applications in nanosensors, energy storage, and nanoelectronics.

  18. A palmitoylation switch mechanism regulates Rac1 function and membrane organization

    Science.gov (United States)

    Navarro-Lérida, Inmaculada; Sánchez-Perales, Sara; Calvo, María; Rentero, Carles; Zheng, Yi; Enrich, Carlos; Del Pozo, Miguel A

    2012-01-01

    The small GTPase Rac1 plays important roles in many processes, including cytoskeletal reorganization, cell migration, cell-cycle progression and gene expression. The initiation of Rac1 signalling requires at least two mechanisms: GTP loading via the guanosine triphosphate (GTP)/guanosine diphosphate (GDP) cycle, and targeting to cholesterol-rich liquid-ordered plasma membrane microdomains. Little is known about the molecular mechanisms governing this specific compartmentalization. We show that Rac1 can incorporate palmitate at cysteine 178 and that this post-translational modification targets Rac1 for stabilization at actin cytoskeleton-linked ordered membrane regions. Palmitoylation of Rac1 requires its prior prenylation and the intact C-terminal polybasic region and is regulated by the triproline-rich motif. Non-palmitoylated Rac1 shows decreased GTP loading and lower association with detergent-resistant (liquid-ordered) membranes (DRMs). Cells expressing no Rac1 or a palmitoylation-deficient mutant have an increased content of disordered membrane domains, and markers of ordered membranes isolated from Rac1-deficient cells do not correctly partition in DRMs. Importantly, cells lacking Rac1 palmitoylation show spreading and migration defects. These data identify palmitoylation as a mechanism for Rac1 function in actin cytoskeleton remodelling by controlling its membrane partitioning, which in turn regulates membrane organization. PMID:22157745

  19. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

    KAUST Repository

    Huang, Yi-Jen

    2016-04-07

    The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (<±1 V) and self-compliance to current up to 50 μA. When it is used for threshold switching, the low threshold current is beneficial for improving the device selectivity. The variation of oxygen distribution measured by energy dispersive X-ray spectroscopy and scanning transmission electron microscopy indicates the formation or rupture of conducting filaments in the device at different resistance states. It is therefore suggested that the push and pull actions of oxygen ions in the amorphous TiOx and polycrystalline TiOx films during the voltage sweep account for the memory switching and threshold switching properties in the device.

  20. Very high plasma switches. Basic plasma physics and switch technology

    International Nuclear Information System (INIS)

    Doucet, H.J.; Roche, M.; Buzzi, J.M.

    1988-01-01

    A review of some high power switches recently developed for very high power technology is made with a special attention to the aspects of plasma physics involved in the mechanisms, which determine the limits of the possible switching parameters

  1. Neuro-Oscillatory Mechanisms of Intersensory Selective Attention and Task Switching in School-Aged Children, Adolescents and Young Adults

    Science.gov (United States)

    Murphy, Jeremy W.; Foxe, John J.; Molholm, Sophie

    2016-01-01

    The ability to attend to one among multiple sources of information is central to everyday functioning. Just as central is the ability to switch attention among competing inputs as the task at hand changes. Such processes develop surprisingly slowly, such that even into adolescence, we remain slower and more error prone at switching among tasks…

  2. Fault Tolerant Mechanism for Multimedia Flows in Wireless Ad Hoc Networks Based on Fast Switching Paths

    Directory of Open Access Journals (Sweden)

    Juan R. Diaz

    2014-01-01

    Full Text Available Multimedia traffic can be forwarded through a wireless ad hoc network using the available resources of the nodes. Several models and protocols have been designed in order to organize and arrange the nodes to improve transmissions along the network. We use a cluster-based framework, called MWAHCA architecture, which optimizes multimedia transmissions over a wireless ad hoc network. It was proposed by us in a previous research work. This architecture is focused on decreasing quality of service (QoS parameters like latency, jitter, and packet loss, but other network features were not developed, like load balance or fault tolerance. In this paper, we propose a new fault tolerance mechanism, using as a base the MWAHCA architecture, in order to recover any multimedia flow crossing the wireless ad hoc network when there is a node failure. The algorithm can run independently for each multimedia flow. The main objective is to keep the QoS parameters as low as possible. To achieve this goal, the convergence time must be controlled and reduced. This paper provides the designed protocol, the analytical model of the algorithm, and a software application developed to test its performance in a real laboratory.

  3. A Coincidence Detection Mechanism Controls PX-BAR Domain-Mediated Endocytic Membrane Remodeling via an Allosteric Structural Switch.

    Science.gov (United States)

    Lo, Wen-Ting; Vujičić Žagar, Andreja; Gerth, Fabian; Lehmann, Martin; Puchkov, Dymtro; Krylova, Oxana; Freund, Christian; Scapozza, Leonardo; Vadas, Oscar; Haucke, Volker

    2017-11-20

    Clathrin-mediated endocytosis occurs by bending and remodeling of the membrane underneath the coat. Bin-amphiphysin-rvs (BAR) domain proteins are crucial for endocytic membrane remodeling, but how their activity is spatiotemporally controlled is largely unknown. We demonstrate that the membrane remodeling activity of sorting nexin 9 (SNX9), a late-acting endocytic PX-BAR domain protein required for constriction of U-shaped endocytic intermediates, is controlled by an allosteric structural switch involving coincident detection of the clathrin adaptor AP2 and phosphatidylinositol-3,4-bisphosphate (PI(3,4)P 2 ) at endocytic sites. Structural, biochemical, and cell biological data show that SNX9 is autoinhibited in solution. Binding to PI(3,4)P 2 via its PX-BAR domain, and concomitant association with AP2 via sequences in the linker region, releases SNX9 autoinhibitory contacts to enable membrane constriction. Our results reveal a mechanism for restricting the latent membrane remodeling activity of BAR domain proteins to allow spatiotemporal coupling of membrane constriction to the progression of the endocytic pathway. Copyright © 2017 Elsevier Inc. All rights reserved.

  4. An apolipoprotein-enriched biomolecular corona switches the cellular uptake mechanism and trafficking pathway of lipid nanoparticles.

    Science.gov (United States)

    Digiacomo, L; Cardarelli, F; Pozzi, D; Palchetti, S; Digman, M A; Gratton, E; Capriotti, A L; Mahmoudi, M; Caracciolo, G

    2017-11-16

    Following exposure to biological milieus (e.g. after systemic administration), nanoparticles (NPs) get covered by an outer biomolecular corona (BC) that defines many of their biological outcomes, such as the elicited immune response, biodistribution, and targeting abilities. In spite of this, the role of BC in regulating the cellular uptake and the subcellular trafficking properties of NPs has remained elusive. Here, we tackle this issue by employing multicomponent (MC) lipid NPs, human plasma (HP) and HeLa cells as models for nanoformulations, biological fluids, and target cells, respectively. By conducting confocal fluorescence microscopy experiments and image correlation analyses, we quantitatively demonstrate that the BC promotes a neat switch of the cell entry mechanism and subsequent intracellular trafficking, from macropinocytosis to clathrin-dependent endocytosis. Nano-liquid chromatography tandem mass spectrometry identifies apolipoproteins as the most abundant components of the BC tested here. Interestingly, this class of proteins target the LDL receptors, which are overexpressed in clathrin-enriched membrane domains. Our results highlight the crucial role of BC as an intrinsic trigger of specific NP-cell interactions and biological responses and set the basis for a rational exploitation of the BC for targeted delivery.

  5. Investigation of a Co-Axial Dual-Mechanical Ports Flux-Switching Permanent Magnet Machine for Hybrid Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Wei Hua

    2015-12-01

    Full Text Available In this paper, a co-axial dual-mechanical ports flux-switching permanent magnet (CADMP-FSPM machine for hybrid electric vehicles (HEVs is proposed and investigated, which is comprised of two conventional co-axial FSPM machines, namely one high-speed inner rotor machine and one low-speed outer rotor machine and a non-magnetic ring sandwiched in between. Firstly, the topology and operation principle of the CADMP-FSPM machine are introduced; secondly, the control system of the proposed electronically-controlled continuously-variable transmission (E-CVT system is given; thirdly, the key design specifications of the CADMP-FSPM machine are determined based on a conventional dual-mechanical ports (DMP machine with a wound inner rotor. Fourthly, the performances of the CADMP-FSPM machine and the normal DMP machine under the same overall volume are compared, and the results indicate that the CADMP-FSPM machine has advantages over the conventional DMP machine in the elimination of brushes and slip rings, improved thermal dissipation conditions for the inner rotor, direct-driven operation, more flexible modes, lower cogging torque and torque ripple, lower total harmonic distortion (THD values of phase PM flux linkage and phase electro-motive force (EMF, higher torque output capability and is suitable for the E-CVT systems. Finally, the pros and cons of the CADMP-FSPM machine are highlighted. This paper lays a theoretical foundation for further research on CADMP-FSPM machines used for HEVs.

  6. Energy reversible switching from amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.; Smith, Casey; Hussain, Muhammad Mustafa

    2013-01-01

    We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young's modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young's modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

  7. Energy reversible switching from amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-08-01

    We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young\\'s modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young\\'s modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

  8. Exciter switch

    Science.gov (United States)

    Mcpeak, W. L.

    1975-01-01

    A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

  9. Electromechanical magnetization switching

    Energy Technology Data Exchange (ETDEWEB)

    Chudnovsky, Eugene M. [Department of Physics and Astronomy, Lehman College and Graduate School, The City University of New York, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Jaafar, Reem [Department of Mathematics, Engineering and Computer Science, LaGuardia Community College, The City University of New York, 31-10 Thomson Avenue, Long Island City, New York 11101 (United States)

    2015-03-14

    We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained.

  10. Electromechanical magnetization switching

    International Nuclear Information System (INIS)

    Chudnovsky, Eugene M.; Jaafar, Reem

    2015-01-01

    We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained

  11. Microstructure and mechanical changes induced by Q-Switched pulse laser on human enamel with aim of caries prevention

    Science.gov (United States)

    Apsari, R.; Pratomo, D. A.; Hikmawati, D.; Bidin, N.

    2016-03-01

    This study was conducted to determine the effect of Q-Switched Nd: YAG laser energy dose to human enamel caries. The specifications of Q-Switched Nd: YAG laser as followed: wavelength of 1064 nm and 6 ns pulse width. Caries enamel samples taken from human teeth molars of 17-35 ages and the type of media caries. Energy doses used in this study were 723.65 mJ/cm2, 767.72 mJ/cm2, and 1065.515 mJ/cm2; 5 Hz repetition rate, and 20 second exposure time. Samples characterized the surface morphology and the percentage of constituent elements, especially calcium/phosphorus (Ca/P) with FESEM-EDAX. The fraction volume and crystallinity percentage of hydroxyapatite (HA) with XRD and hardness value using Vickers Microhardness Test. The results indicated that exposure of Q-Switched Nd:YAG laser on enamel caries resulting cracks, holes, and melt due to plasma production effects in the surface. Plasma production effect also resulted in micro properties such as percentage of Ca/P was close to normal, the fraction volume and crystallinity percentage of HA went up but did not change the crystal structure (in terms of the lattice structure). The hardness value also rose as linear as exposure energy dose caused by phototermal effect. Based on the results, Q-Switched Nd:YAG laser can be used as contactless drill dental caries replacement candidate with the additional therapy effect such as localized caries in order to avoid the spread, the ratio of Ca/P approaching healthy teeth, the fraction volume and crystallinity percentage of HA rose and established stronger teeth with peak energy dose 1065.515 mJ/cm2.

  12. Pseudospark switches

    International Nuclear Information System (INIS)

    Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

    1987-01-01

    The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

  13. Evaluation of electromagnetic interference between electromagnet and permanent magnet of reed switch of SMART control rod driver mechanism

    International Nuclear Information System (INIS)

    Hur, H.; Kim, J. H.; Park, J. S.; Yoo, J. Y.; Kim, J. I.

    2002-01-01

    Integral reactors require a fine reactivity control CEDM since the nuclear heating is used during the startup. Although a linear pulse motor type had been chosen for the SMART CEDM, a ball screw type is being considered as an alternative. A ball screw type CEDM driven by a rotary step motor has an emergency insertion system using electromagnet and also has a permanent magnet for RSPT in the upper pressure housing above the electromagnet. So it is necessary to evaluate an electromagnetic interference for reed switches in the vicinity of the electromagnet. This paper describes the design parameters for effective operation and the optimum design point was determined by analyzing the trend of the EMI characteristics

  14. Software Switching for Data Acquisition

    CERN Multimedia

    CERN. Geneva; Malone, David

    2016-01-01

    In this talk we discuss the feasibility of replacing telecom-class routers with a topology of commodity servers acting as software switches in data acquisition. We extend the popular software switch, Open vSwitch, with a dedicated, throughput-oriented buffering mechanism. We compare the performance under heavy many-to-one congestion to typical Ethernet switches and evaluate the scalability when building larger topologies, exploiting the integration with software-defined networking technologies. Please note that David Malone will speak on behalf of Grzegorz Jereczek.

  15. Loss of p19(Arf facilitates the angiogenic switch and tumor initiation in a multi-stage cancer model via p53-dependent and independent mechanisms.

    Directory of Open Access Journals (Sweden)

    Danielle B Ulanet

    2010-08-01

    Full Text Available The Arf tumor suppressor acts as a sensor of oncogenic signals, countering aberrant proliferation in large part via activation of the p53 transcriptional program, though a number of p53-independent functions have been described. Mounting evidence suggests that, in addition to promoting tumorigenesis via disruptions in the homeostatic balance between cell proliferation and apoptosis of overt cancer cells, genetic alterations leading to tumor suppressor loss of function or oncogene gain of function can also incite tumor development via effects on the tumor microenvironment. In a transgenic mouse model of multi-stage pancreatic neuroendocrine carcinogenesis (PNET driven by inhibition of the canonical p53 and Rb tumor suppressors with SV40 large T-antigen (Tag, stochastic progression to tumors is limited in part by a requirement for initiation of an angiogenic switch. Despite inhibition of p53 by Tag in this mouse PNET model, concomitant disruption of Arf via genetic knockout resulted in a significantly accelerated pathway to tumor formation that was surprisingly not driven by alterations in tumor cell proliferation or apoptosis, but rather via earlier activation of the angiogenic switch. In the setting of a constitutional p53 gene knockout, loss of Arf also accelerated tumor development, albeit to a lesser degree. These findings demonstrate that Arf loss of function can promote tumorigenesis via facilitating angiogenesis, at least in part, through p53-independent mechanisms.

  16. Context-dependent switching between proactive and reactive working memory control mechanisms in the right inferior frontal gyrus.

    Science.gov (United States)

    Marklund, Petter; Persson, Jonas

    2012-11-15

    A critical feature of higher cognitive functioning is the capacity to flexibly tailor information processing and behaviors to current situational demands. Recent neurocognitive models have been postulated to account for the dynamic nature of human executive processing by invoking two dissociable cognitive control modes, proactive and reactive control. These may involve partially overlapping, but temporally distinct neural implementation in the prefrontal cortex. Prior brain imaging studies exploring proactive control have mainly used tasks requiring only information about single-items to be retained over unfilled delays. Whether proactive control can also be utilized to facilitate performance in more complex working memory tasks, in which concurrent processing of intervening items and updating is mandatory during contextual cue maintenance remains an open question. To examine this issue and to elucidate the extent to which overlapping neural substrates underlie proactive and reactive control we used fMRI and a modified verbal 3-back paradigm with embedded cues predictive of high-interference trials. This task requires context information to be retained over multiple intervening trials. We found that performance improved with item-specific cues predicting forthcoming lures despite increased working memory load. Temporal dynamics of activation in the right inferior frontal gyrus suggest flexible switching between proactive and reactive control in a context-dependent fashion, with greater sustained responses elicited in the 3-back task involving context maintenance of cue information and greater transient responses elicited in the 3-back task absent of cues. Copyright © 2012 Elsevier Inc. All rights reserved.

  17. Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations

    Science.gov (United States)

    Aspera, Susan Meñez; Kasai, Hideaki; Kishi, Hirofumi; Awaya, Nobuyoshi; Ohnishi, Shigeo; Tamai, Yukio

    2013-01-01

    The resistance random access memory (RRAM™) device, with its electrically induced nanoscale resistive switching capacity, has attracted considerable attention as a future nonvolatile memory device. Here, we propose a mechanism of switching based on an oxygen vacancy migration-driven change in the electronic properties of the transition-metal oxide film stimulated by set pulse voltages. We used density functional theory-based calculations to account for the effect of oxygen vacancies and their migration on the electronic properties of HfO2 and Ta/HfO2 systems, thereby providing a complete explanation of the RRAM™ switching mechanism. Furthermore, computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the set and reset pulse voltage obtained from experiments. Understanding this mechanism will be beneficial to effectively realizing the materials design in these devices.

  18. Switching Phenomena

    Science.gov (United States)

    Stanley, H. E.; Buldyrev, S. V.; Franzese, G.; Havlin, S.; Mallamace, F.; Mazza, M. G.; Kumar, P.; Plerou, V.; Preis, T.; Stokely, K.; Xu, L.

    One challenge of biology, medicine, and economics is that the systems treated by these serious scientific disciplines can suddenly "switch" from one behavior to another, even though they possess no perfect metronome in time. As if by magic, out of nothing but randomness one finds remarkably fine-tuned processes in time. The past century has, philosophically, been concerned with placing aside the human tendency to see the universe as a fine-tuned machine. Here we will address the challenge of uncovering how, through randomness (albeit, as we shall see, strongly correlated randomness), one can arrive at some of the many temporal patterns in physics, economics, and medicine and even begin to characterize the switching phenomena that enable a system to pass from one state to another. We discuss some applications of correlated randomness to understanding switching phenomena in various fields. Specifically, we present evidence from experiments and from computer simulations supporting the hypothesis that water's anomalies are related to a switching point (which is not unlike the "tipping point" immortalized by Malcolm Gladwell), and that the bubbles in economic phenomena that occur on all scales are not "outliers" (another Gladwell immortalization).

  19. Intrinsic nanofilamentation in resistive switching

    KAUST Repository

    Wu, Xing; Cha, Dong Kyu; Bosman, Michel; Raghavan, Nagarajan; Migas, Dmitri B.; Borisenko, Victor E.; Zhang, Xixiang; Li, Kun; Pey, Kin-Leong

    2013-01-01

    -chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission

  20. The Application of High Temperature Superconducting Materials to Power Switches

    CERN Document Server

    March, S A; Ballarino, A

    2009-01-01

    Superconducting switches may find application in superconducting magnet systems that require energy extraction. Such superconducting switches could be bypass-switches that are operated in conjunction with a parallel resistor or dump-switches where all of the energy is dissipated in the switch itself. Bypass-switches are more suited to higher energy circuits as a portion of the energy can be dissipated in the external dump resistor. Dump- switches require less material and triggering energy as a lower switch resistance is needed to achieve the required total dump resistance. Both superconducting bypass-switches and superconducting dump-switches can be ther- mally activated. Switching times that are comparable to those obtained with mechanical bypass-switch systems can be achieved using a co-wound heater that is powered by a ca- pacitor discharge. Switches that have fast thermal diffusion times through the insulation can be modelled as a lumped system whereas those with slow thermal diffusion times were modelle...

  1. Pulsed laser triggered high speed microfluidic switch

    Science.gov (United States)

    Wu, Ting-Hsiang; Gao, Lanyu; Chen, Yue; Wei, Kenneth; Chiou, Pei-Yu

    2008-10-01

    We report a high-speed microfluidic switch capable of achieving a switching time of 10 μs. The switching mechanism is realized by exciting dynamic vapor bubbles with focused laser pulses in a microfluidic polydimethylsiloxane (PDMS) channel. The bubble expansion deforms the elastic PDMS channel wall and squeezes the adjacent sample channel to control its fluid and particle flows as captured by the time-resolved imaging system. A switching of polystyrene microspheres in a Y-shaped channel has also been demonstrated. This ultrafast laser triggered switching mechanism has the potential to advance the sorting speed of state-of-the-art microscale fluorescence activated cell sorting devices.

  2. An eco-epidemiological study of Morbilli-related paramyxovirus infection in Madagascar bats reveals host-switching as the dominant macro-evolutionary mechanism.

    Science.gov (United States)

    Mélade, Julien; Wieseke, Nicolas; Ramasindrazana, Beza; Flores, Olivier; Lagadec, Erwan; Gomard, Yann; Goodman, Steven M; Dellagi, Koussay; Pascalis, Hervé

    2016-04-12

    An eco-epidemiological investigation was carried out on Madagascar bat communities to better understand the evolutionary mechanisms and environmental factors that affect virus transmission among bat species in closely related members of the genus Morbillivirus, currently referred to as Unclassified Morbilli-related paramyxoviruses (UMRVs). A total of 947 bats were investigated originating from 52 capture sites (22 caves, 18 buildings, and 12 outdoor sites) distributed over different bioclimatic zones of the island. Using RT-PCR targeting the L-polymerase gene of the Paramyxoviridae family, we found that 10.5% of sampled bats were infected, representing six out of seven families and 15 out of 31 species analyzed. Univariate analysis indicates that both abiotic and biotic factors may promote viral infection. Using generalized linear modeling of UMRV infection overlaid on biotic and abiotic variables, we demonstrate that sympatric occurrence of bats is a major factor for virus transmission. Phylogenetic analyses revealed that all paramyxoviruses infecting Malagasy bats are UMRVs and showed little host specificity. Analyses using the maximum parsimony reconciliation tool CoRe-PA, indicate that host-switching, rather than co-speciation, is the dominant macro-evolutionary mechanism of UMRVs among Malagasy bats.

  3. Fork stalling and template switching as a mechanism for polyalanine tract expansion affecting the DYC mutant of HOXD13, a new murine model of synpolydactyly.

    Science.gov (United States)

    Cocquempot, Olivier; Brault, Véronique; Babinet, Charles; Herault, Yann

    2009-09-01

    Polyalanine expansion diseases are proposed to result from unequal crossover of sister chromatids that increases the number of repeats. In this report we suggest an alternative mechanism we put forward while we investigated a new spontaneous mutant that we named "Dyc" for "Digit in Y and Carpe" phenotype. Phenotypic analysis revealed an abnormal limb patterning similar to that of the human inherited congenital disease synpolydactyly (SPD) and to the mouse mutant model Spdh. Both human SPD and mouse Spdh mutations affect the Hoxd13 gene within a 15-residue polyalanine-encoding repeat in the first exon of the gene, leading to a dominant negative HOXD13. Genetic analysis of the Dyc mutant revealed a trinucleotide expansion in the polyalanine-encoding region of the Hoxd13 gene resulting in a 7-alanine expansion. However, unlike the Spdh mutation, this expansion cannot result from a simple duplication of a short segment. Instead, we propose the fork stalling and template switching (FosTeS) described for generation of nonrecurrent genomic rearrangements as a possible mechanism for the Dyc polyalanine extension, as well as for other polyalanine expansions described in the literature and that could not be explained by unequal crossing over.

  4. CONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODE

    KAUST Repository

    Abdul Rahim, Farhan

    2014-05-01

    MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions and also provide more reliability and cause less power loss. A major problem with mechanical switches is bouncing. Bouncing is an undesirable characteristic which increases the switching time and causes damage to the switch structure affecting the overall switch life. This thesis proposes a new switch design that may be used to mitigate bouncing by using two voltage sources using a double electrode configuration. The effect of many switch’s tunable parameters is also discussed and an effective tuning technique is also provided. The results are compared to the current control schemes in literature and show that the double electrode scheme is a viable control option.

  5. Molecular Structures and Dynamics of the Stepwise Activation Mechanism of a Matrix Metalloproteinase Zymogen: Challenging the Cysteine Switch Dogma

    International Nuclear Information System (INIS)

    Rosenblum, G.; Meroueh, S.; Toth, M.; Fisher, J.; Fridman, R.; Mobashery, S.; Sagi, I.

    2007-01-01

    Activation of matrix metalloproteinase zymogen (pro-MMP) is a vital homeostatic process, yet its molecular basis remains unresolved. Using stopped-flow X-ray spectroscopy of the active site zinc ion, we determined the temporal sequence of pro-MMP-9 activation catalyzed by tissue kallikrein protease in milliseconds to several minutes. The identity of three intermediates seen by X-ray spectroscopy was corroborated by molecular dynamics simulations and quantum mechanics/molecular mechanics calculations. The cysteine-zinc interaction that maintains enzyme latency is disrupted via active-site proton transfers that mediate transient metal-protein coordination events and eventual binding of water. Unexpectedly, these events ensue as a direct result of complexation of pro-MMP-9 and kallikrein and occur before proteolysis and eventual dissociation of the pro-peptide from the catalytic site. Here we demonstrate the synergism among long-range protein conformational transitions, local structural rearrangements, and fine atomic events in the process of zymogen activation.

  6. Optical fiber switch

    Science.gov (United States)

    Early, James W.; Lester, Charles S.

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  7. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

    Science.gov (United States)

    Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

    2017-03-01

    One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p+-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

  8. Cambrian origin of the CYP27C1-mediated vitamin A1-to-A2 switch, a key mechanism of vertebrate sensory plasticity

    Science.gov (United States)

    Morshedian, Ala; Toomery, Matthew B.; Pollock, Gabriel E.; Frederiksen, Rikard; Enright, Jennifer; McCormick, Stephen; Cornwall, M. Carter; Fain, Gordon L.; Corbo, Joseph C.

    2017-01-01

    The spectral composition of ambient light varies across both space and time. Many species of jawed vertebrates adapt to this variation by tuning the sensitivity of their photoreceptors via the expression of CYP27C1, an enzyme that converts vitamin A1 into vitamin A2, thereby shifting the ratio of vitamin A1-based rhodopsin to red-shifted vitamin A2-based porphyropsin in the eye. Here, we show that the sea lamprey (Petromyzon marinus), a jawless vertebrate that diverged from jawed vertebrates during the Cambrian period (approx. 500 Ma), dynamically shifts its photoreceptor spectral sensitivity via vitamin A1-to-A2 chromophore exchange as it transitions between photically divergent aquatic habitats. We further show that this shift correlates with high-level expression of the lamprey orthologue of CYP27C1, specifically in the retinal pigment epithelium as in jawed vertebrates. Our results suggest that the CYP27C1-mediated vitamin A1-to-A2 switch is an evolutionarily ancient mechanism of sensory plasticity that appeared not long after the origin of vertebrates.

  9. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.

    Science.gov (United States)

    Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

    2017-03-21

    One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p + -Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

  10. Two-photon fluorescent polysiloxane-based films with thermally responsive self switching properties achieved by a unique reversible spirocyclization mechanism.

    Science.gov (United States)

    Zuo, Yujing; Yang, Tingxin; Zhang, Yu; Gou, Zhiming; Tian, Minggang; Kong, Xiuqi; Lin, Weiying

    2018-03-14

    Responsiveness and reversibility are present in nature, and are ubiquitous in biological systems. The realization of reversibility and responsiveness is of great importance in the development of properties and the design of new materials. However, two-photon fluorescent thermal-responsive materials have not been reported to date. Herein, we engineered thermally responsive polysiloxane materials ( Dns-non ) that exhibited unique two-photon luminescence, and this is the first report about thermally responsive luminescent materials with two-photon fluorescence. The fluorescence of Dns-non could switch from the "on" to "off" state through a facile heating and cooling process, which could be observed by the naked eye. Monitoring the temperature of the CPU in situ was achieved by easily coating D1-non onto the CPU surface, which verified the potential application in devices of Dns-non . A unique alkaline tuned reversible transition mechanism of rhodamine-B from its spirocyclic to its ring-open state was proposed. Furthermore, Dns-non appeared to be a useful cell adhesive for the culture of cells on the surface. We believe that the constructed thermally responsive silicon films which have promising utilization as a new type of functional fluorescent material, may show broad applications in materials chemistry or bioscience.

  11. A Piezoelectric Cryogenic Heat Switch

    Science.gov (United States)

    Jahromi, Amir E.; Sullivan, Dan F.

    2014-01-01

    We have measured the thermal conductance of a mechanical heat switch actuated by a piezoelectric positioner, the PZHS (PieZo electric Heat Switch), at cryogenic temperatures. The thermal conductance of the PZHS was measured between 4 K and 10 K, and on/off conductance ratios greater than 100 were achieved when the positioner applied its maximum force of 8 N. We discuss the advantages of using this system in cryogenic applications, and estimate the ultimate performance of an optimized PZHS.

  12. EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

    Science.gov (United States)

    Weinelt, Martin; von Oppen, Felix

    2012-10-01

    metal surfaces, focusing on electronic and vibrational spectroscopy in one case and scanning tunneling microscopy studies in the other. Original research articles describe results in many aspects of the field, including: Self-assembly, self-organization, and controlled growth of molecular layers on various substrates. Highly-ordered arrays provide model systems with extraordinary structural properties, allowing one to adjust interactions between molecules and between molecule and substrate, and can be robustly prepared from solution, an essential prerequisite for applications. Conformational or electronic switching of molecules adsorbed at metal and semiconductor surfaces. These studies highlight the elementary processes governing molecular switching at surfaces as well as the wide range of possible stimuli. Carbon-based substrates such as graphene or carbon nanotubes. These substrates are attractive due to their effective two-dimensionality which implies that switching of adsorbed molecules can effect a significant back-action on the substrate. Mechanisms of conformational switching. Several contributions study the role of electron-vibron coupling and heating in current-induced conformational switching. We hope that the collection of articles presented here will stimulate and encourage researchers in surface physics and interfacial chemistry to contribute to the still emerging field of molecular switches at surfaces. We wish to acknowledge the support and input from many colleagues in preparing this special section. A significant part of this work has been conducted in the framework of the Sonderforschungsbereich 658 Elementary Processes in Molecular Switches at Surfaces of the Deutsche Forschungsgemeinschaft, to which we are grateful for financial support. Molecular surfaces at switches contents Molecular switches at surfacesMartin Weinelt and Felix von Oppen Optically and thermally induced molecular switching processes at metal surfacesPetra Tegeder Effects of

  13. Switched on!

    CERN Multimedia

    2008-01-01

    Like a star arriving on stage, impatiently followed by each member of CERN personnel and by millions of eyes around the world, the first beam of protons has circulated in the LHC. After years in the making and months of increasing anticipation, today the work of hundreds of people has borne fruit. WELL DONE to all! Successfully steered around the 27 kilometres of the world’s most powerful particle accelerator at 10:28 this morning, this first beam of protons circulating in the ring marks a key moment in the transition from over two decades of preparation to a new era of scientific discovery. "It’s a fantastic moment," said the LHC project leader Lyn Evans, "we can now look forward to a new era of understanding about the origins and evolution of the universe". Starting up a major new particle accelerator takes much more than flipping a switch. Thousands of individual elements have to work in harmony, timings have to be synchronize...

  14. Ferroelectric switching of elastin

    Science.gov (United States)

    Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

    2014-01-01

    Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

  15. Stateless multicast switching in software defined networks

    OpenAIRE

    Reed, Martin J.; Al-Naday, Mays; Thomos, Nikolaos; Trossen, Dirk; Petropoulos, George; Spirou, Spiros

    2016-01-01

    Multicast data delivery can significantly reduce traffic in operators' networks, but has been limited in deployment due to concerns such as the scalability of state management. This paper shows how multicast can be implemented in contemporary software defined networking (SDN) switches, with less state than existing unicast switching strategies, by utilising a Bloom Filter (BF) based switching technique. Furthermore, the proposed mechanism uses only proactive rule insertion, and thus, is not l...

  16. Ultrafast pulse generation in photoconductive switches

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Dykaar, D. R.

    1996-01-01

    Carrier and field dynamics in photoconductive switches are investigated by electrooptic sampling and voltage-dependent reflectivity measurements. We show that the nonuniform field distribution due to the two-dimensional nature of coplanar photoconductive switches, in combination with the large di...... difference in the mobilities of holes and electrons, determine the pronounced polarity dependence. Our measurements indicate that the pulse generation mechanism is a rapid voltage breakdown across the photoconductive switch and not a local field breakdown...

  17. When global rule reversal meets local task switching: The neural mechanisms of coordinated behavioral adaptation to instructed multi-level demand changes.

    Science.gov (United States)

    Shi, Yiquan; Wolfensteller, Uta; Schubert, Torsten; Ruge, Hannes

    2018-02-01

    Cognitive flexibility is essential to cope with changing task demands and often it is necessary to adapt to combined changes in a coordinated manner. The present fMRI study examined how the brain implements such multi-level adaptation processes. Specifically, on a "local," hierarchically lower level, switching between two tasks was required across trials while the rules of each task remained unchanged for blocks of trials. On a "global" level regarding blocks of twelve trials, the task rules could reverse or remain the same. The current task was cued at the start of each trial while the current task rules were instructed before the start of a new block. We found that partly overlapping and partly segregated neural networks play different roles when coping with the combination of global rule reversal and local task switching. The fronto-parietal control network (FPN) supported the encoding of reversed rules at the time of explicit rule instruction. The same regions subsequently supported local task switching processes during actual implementation trials, irrespective of rule reversal condition. By contrast, a cortico-striatal network (CSN) including supplementary motor area and putamen was increasingly engaged across implementation trials and more so for rule reversal than for nonreversal blocks, irrespective of task switching condition. Together, these findings suggest that the brain accomplishes the coordinated adaptation to multi-level demand changes by distributing processing resources either across time (FPN for reversed rule encoding and later for task switching) or across regions (CSN for reversed rule implementation and FPN for concurrent task switching). © 2017 Wiley Periodicals, Inc.

  18. Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.

    Science.gov (United States)

    Chakrabarti, Somsubhra; Ginnaram, Sreekanth; Jana, Surajit; Wu, Zong-Yi; Singh, Kanishk; Roy, Anisha; Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Yang, Jer-Ren

    2017-07-05

    Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiO x /TiN structure have been investigated for the first time. The as-deposited amorphous BaTiO x film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.39 mV/decade). Quantum conductance phenomenon has been observed in staircase RESET cycle of the memory devices. By inspecting the oxidation states of Ba + and Ba 2+ through measuring H 2 O 2 with a low concentration of 1 nM in electrolyte/BaTiO x /SiO 2 /p-Si structure, the switching mechanism of each HRS level as well as the multi-level phenomenon has been explained by gradual dissolution of oxygen vacancy filament. Along with negative stop voltage modulated multi-level, current compliance dependent multi-level has also been demonstrated and resistance ratio up to 2000 has been achieved even for a thin (voltage switching curve has been simulated as well. Hence, multi-level resistive switching of Cr/BaTiO x /TiN structure implies the promising applications in high dense, multistate non-volatile memories in near future.

  19. Digital switched hydraulics

    Science.gov (United States)

    Pan, Min; Plummer, Andrew

    2018-06-01

    This paper reviews recent developments in digital switched hydraulics particularly the switched inertance hydraulic systems (SIHSs). The performance of SIHSs is presented in brief with a discussion of several possible configurations and control strategies. The soft switching technology and high-speed switching valve design techniques are discussed. Challenges and recommendations are given based on the current research achievements.

  20. Gothic aortic arch and cardiac mechanics in young patients after arterial switch operation for d-transposition of the great arteries.

    Science.gov (United States)

    Di Salvo, Giovanni; Bulbul, Ziad; Pergola, Valeria; Issa, Ziad; Siblini, Ghassan; Muhanna, Nisreen; Galzerano, Domenico; Fadel, Bahaa; Al Joufan, Mansour; Al Fayyadh, Majid; Al Halees, Zohair

    2017-08-15

    In patients who have undergone arterial switch operation (ASO) for d-transposition of the great arteries a gothic aortic arch (GA) morphology has been found and it has been associated with abnormal aortic bio-elastic properties. GA is frequent in ASO patients and may have an impact on cardiac mechanics. Our study aims were to assess 1- the occurrence of GA in a large sample of patients after ASO; 2- the association between GA and aortic bio-elastic properties; and 3- the impact of GA on left ventricular (LV) function using speckle tracking echocardiography (STE). We studied one hundred and five asymptomatic patients, who have undergone first stage ASO for d-TGA, with normal left ventricular ejection fraction (LVEF ≥53%). Forty-six (44%) patients showed a GA (mean age 11.5±7.2years, 26 males) while fifty-nine (56%) patients (mean age 9.6±6.7years, 37 males) did not present GA. The two groups were comparable for age, sex, BSA, and office blood pressure values. In group GA aortic root was significantly dilated (27.4±7.5mm vs. 21.2±6.9mm, p<0.0001), aortic stiffness index (Group GA=1.8±1.2 vs. 1.4±0.7, p=0.025) was significantly increased, left atrial volume was larger (p=0.0145), global longitudinal strain (Group GA=-18.4±2.5% vs. -20.1±3.3%, p=0.012) and basal LV longitudinal strains (Group GA=-16.9±4.8% vs. -20.4±7.0%, p=0.013) were significantly reduced. After ASO the presence of a GA is associated with a significantly dilated aortic root, stiffer aortic wall, larger left atrial volume, and worse LV longitudinal systolic deformations, well known predictors of cardiovascular morbidity and mortality. Copyright © 2017 Elsevier B.V. All rights reserved.

  1. Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

    Science.gov (United States)

    Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

    2018-06-01

    Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

  2. Internal Backpressure for Terabit Switch Fabrics

    DEFF Research Database (Denmark)

    Fagertun, Anna Manolova; Ruepp, Sarah Renée; Rytlig, Andreas

    2012-01-01

    This paper proposes and analyzes the efficiency of novel backpressure schemes for Terabit switch fabrics. The proposed schemes aim at buffer optimization under uniform traffic distribution with Bernoulli packet arrival process. Results show that a reduction of the needed maximum buffer capacity w...... with up to 47% can be achieved with switch-internal backpressure mechanisms at the expense of a small control overhead....

  3. Microelectromechanical Switches for Phased Array Antennas

    Science.gov (United States)

    Ponchak, George E.; Simons, Rainee N.; Scardelletti, Maximillian; Varaljay, Nicholas C.

    2000-01-01

    Preliminary results are presented on the fabrication and testing of a MicroElectro-Mechanical (MEM) microstrip series switch. This switch is being developed for use in a K-band phased array antenna that NASA will use for communication links in its Earth orbiting satellites. Preliminary insertion loss and isolation measurements are presented.

  4. Heat switch technology for cryogenic thermal management

    Science.gov (United States)

    Shu, Q. S.; Demko, J. A.; E Fesmire, J.

    2017-12-01

    Systematic review is given of development of novel heat switches at cryogenic temperatures that alternatively provide high thermal connection or ideal thermal isolation to the cold mass. These cryogenic heat switches are widely applied in a variety of unique superconducting systems and critical space applications. The following types of heat switch devices are discussed: 1) magnetic levitation suspension, 2) shape memory alloys, 3) differential thermal expansion, 4) helium or hydrogen gap-gap, 5) superconducting, 6) piezoelectric, 7) cryogenic diode, 8) magneto-resistive, and 9) mechanical demountable connections. Advantages and limitations of different cryogenic heat switches are examined along with the outlook for future thermal management solutions in materials and cryogenic designs.

  5. Switching dynamics of TaOx-based threshold switching devices

    Science.gov (United States)

    Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

    2018-03-01

    Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

  6. IGBT: a solid state switch

    International Nuclear Information System (INIS)

    Chatroux, D.; Maury, J.; Hennevin, B.

    1993-01-01

    A Copper Vapour Laser Power Supply has been designed using a solid state switch consisting in eighteen Isolated Gate Bipolar Transistors (IGBT), -1200 volts, 400 Amps, each-in parallel. This paper presents the Isolated Gate Bipolar Transistor (IGBTs) replaced in the Power Electronic components evolution, and describes the IGBT conduction mechanism, presents the parallel association of IGBTs, and studies the application of these components to a Copper Vapour Laser Power Supply. The storage capacitor voltage is 820 volts, the peak current of the solid state switch is 17.000 Amps. The switch is connected on the primary of a step-up transformer, followed by a magnetic modulator. The reset of the magnetic modulator is provided by part of the laser reflected energy with a patented circuit. The charging circuit is a resonant circuit with a charge controlled by an IGBT switch. When the switch is open, the inductance energy is free-wheeled by an additional winding and does not extend the charging phase of the storage capacitor. The design allows the storage capacitor voltage to be very well regulated. This circuit is also patented. The electric pulse in the laser has 30.000 Volt peak voltage, 2000 Amp peak current, and is 200 nanoseconds long, for a 200 Watt optical power Copper Vapour Laser

  7. Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlO{sub x}/TaO{sub x}/TiN structure

    Energy Technology Data Exchange (ETDEWEB)

    Roy, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333, Taiwan (China); Maikap, S., E-mail: sidhu@mail.cgu.edu.tw [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333, Taiwan (China); Sreekanth, G.; Dutta, M.; Jana, D. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333, Taiwan (China); Chen, Y.Y.; Yang, J.R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

    2015-07-15

    Highlights: • Cu:AlO{sub x} alloy is used for the first time to have defective TaO{sub x} film. • A relation in between formation voltage and RESET current has been developed. • A switching mechanism based on a thinner with dense Cu filament is demonstrated. • Good uniformity with yield of >90% and long cycles using 1 ms pulse are obtained. - Abstract: Improved resistive switching phenomena such as device-to-device uniformity, lower formation voltage (2.8 V) and RESET current, >500 program/erase cycles, longer read endurance of >10{sup 6} cycles with a program/erase pulse width of 1 μs, and data retention of >225 h under a low current compliance of 300 μA have been discussed by using Cu-Al alloy in Cu:AlO{sub x}/TaO{sub x}/TiN conductive bridging resistive random access memory (CBRAM) device for the first time. The switching mechanism is based on a thinner with dense Cu filament formation/dissolution through the defects in the Cu:AlO{sub x}/TaO{sub x}/TiN structure owing to enhance memory characteristics. These characteristics have been confirmed by measuring randomly picked 100 devices having via-hole size of 0.4 × 0.4 μm{sup 2}. The Cu-Al alloy becomes Cu:AlO{sub x} buffer layer and Ta{sub 2}O{sub 5} becomes TaO{sub x} switching layer owing to Gibbs free energy dependency. All layers and elements are observed by high-resolution transmission electron microscope (HRTEM) image and energy dispersive X-ray spectroscopy (EDX). By developing a numerical equation in between RESET current and formation voltage, it is found that a higher rate of Cu migration is observed owing to both the defective switching layer and larger size, which results a lower formation voltage and RESET current of the Cu:AlO{sub x}/TaO{sub x}/TiN structure, as compared to Cu/Ta{sub 2}O{sub 5}/TiN under external positive bias on the Cu electrode. This simple Cu:AlO{sub x}/TaO{sub x}/TiN CBRAM device is useful for future nanoscale non-volatile memory application.

  8. Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure

    Science.gov (United States)

    Chakrabarti, Somsubhra; Panja, Rajeswar; Roy, Sourav; Roy, Anisha; Samanta, Subhranu; Dutta, Mrinmoy; Ginnaram, Sreekanth; Maikap, Siddheswar; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Jana, Debanjan; Qiu, Jian-Tai; Yang, Jer-Ren

    2018-03-01

    Understanding of resistive switching mechanism through H2O2 sensing and improvement of switching characteristics by using TaOx-based material in W/Al2O3/TaOx/TiN structure have been reported for the first time. Existence of amorphous Al2O3/TaOx layer in the RRAM devices has been confirmed by transmission electron microscopy. By analyzing the oxidation states of Ta2+/Ta5+ for TaOx switching material and W0/W6+ for WOx layer at the W/TaOx interface through X-ray photoelectron spectroscopy and H2O2 sensing, the reduction-oxidation mechanism under Set/Reset occurs only in the TaOx layer for the W/Al2O3/TaOx/TiN structures. This leads to higher Schottky barrier height at the W/Al2O3 interface (0.54 eV vs. 0.46 eV), higher resistance ratio, and long program/erase endurance of >108 cycles with 100 ns pulse width at a low operation current of 30 μA. Stable retention of more than 104 s at 85 °C is also obtained. Using conduction mechanism and reduction-oxidation reaction, current-voltage characteristic has been simulated. Both TaOx and WOx membranes have high pH sensitivity values of 47.65 mV/pH and 49.25 mV/pH, respectively. Those membranes can also sense H2O2 with a low concentration of 1 nM in an electrolyte-insulator-semiconductor structure because of catalytic activity, while the Al2O3 membrane does not show sensing. The TaOx material in W/Al2O3/TaOx/TiN structure does not show only a path towards high dense, small size memory application with understanding of switching mechanism but also can be used for H2O2 sensors.

  9. Ultra High-Speed Radio Frequency Switch Based on Photonics.

    Science.gov (United States)

    Ge, Jia; Fok, Mable P

    2015-11-26

    Microwave switches, or Radio Frequency (RF) switches have been intensively used in microwave systems for signal routing. Compared with the fast development of microwave and wireless systems, RF switches have been underdeveloped particularly in terms of switching speed and operating bandwidth. In this paper, we propose a photonics based RF switch that is capable of switching at tens of picoseconds speed, which is hundreds of times faster than any existing RF switch technologies. The high-speed switching property is achieved with the use of a rapidly tunable microwave photonic filter with tens of gigahertz frequency tuning speed, where the tuning mechanism is based on the ultra-fast electro-optics Pockels effect. The RF switch has a wide operation bandwidth of 12 GHz and can go up to 40 GHz, depending on the bandwidth of the modulator used in the scheme. The proposed RF switch can either work as an ON/OFF switch or a two-channel switch, tens of picoseconds switching speed is experimentally observed for both type of switches.

  10. Nano- and micro-electromechanical switch dynamics

    International Nuclear Information System (INIS)

    Pulskamp, Jeffrey S; Proie, Robert M; Polcawich, Ronald G

    2013-01-01

    This paper reports theoretical analysis and experimental results on the dynamics of piezoelectric MEMS mechanical logic relays. The multiple degree of freedom analytical model, based on modal decomposition, utilizes modal parameters obtained from finite element analysis and an analytical model of piezoelectric actuation. The model accounts for exact device geometry, damping, drive waveform variables, and high electric field piezoelectric nonlinearity. The piezoelectrically excited modal force is calculated directly and provides insight into design optimization for switching speed. The model accurately predicts the propagation delay dependence on actuation voltage of mechanically distinct relay designs. The model explains the observed discrepancies in switching speed of these devices relative to single degree of freedom switching speed models and suggests the strong potential for improved switching speed performance in relays designed for mechanical logic and RF circuits through the exploitation of higher order vibrational modes. (paper)

  11. Resistance switching mechanism of La{sub 0.8}Sr{sub 0.2}MnO{sub 3−δ} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Luo, X.D. [School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China); Chongqing Key Laboratory of Nano/Micro Composite Materials and Devices, Chongqing 401331 (China); Gao, R.L., E-mail: gaorongli2008@163.com [School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China); Chongqing Key Laboratory of Nano/Micro Composite Materials and Devices, Chongqing 401331 (China); Fu, C.L.; Cai, W.; Chen, G.; Deng, X.L. [School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China); Chongqing Key Laboratory of Nano/Micro Composite Materials and Devices, Chongqing 401331 (China); Zhang, H.R; Sun, J.R. [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing 100190 (China)

    2016-02-15

    Effects of oxygen vacancies on the electrical transport properties of oxygen stoichiometric La{sub 0.8}Sr{sub 0.2}MnO{sub 3} and oxygen-deficient La{sub 0.8}Sr{sub 0.2}MnO{sub 3−δ} films have been investigated. The result presents that the oxygen-deficient films annealed in vacuum show obvious increase of resistance and lattice parameter. With the sweeping voltage or temperature increasing, the resistance exhibits obvious bipolar switching effect, no forming process was needed. Oxygen deficiency in the annealed film leads to the formation of a structural disorder in the Mn–O–Mn conduction channel due to the accumulation of oxygen vacancies under high external electric field or temperatures and hence is believed to be responsible for the bipolar resistance switching effect and the enhanced resistivity compared with oxygen stoichiometric La{sub 0.8}Sr{sub 0.2}MnO{sub 3} film. These results may be important for practical applications in photoelectric or storage devices and point to a useful direction for other oxidizing materials.

  12. Resistance switching mechanism of La_0_._8Sr_0_._2MnO_3_−_δ thin films

    International Nuclear Information System (INIS)

    Luo, X.D.; Gao, R.L.; Fu, C.L.; Cai, W.; Chen, G.; Deng, X.L.; Zhang, H.R; Sun, J.R.

    2016-01-01

    Effects of oxygen vacancies on the electrical transport properties of oxygen stoichiometric La_0_._8Sr_0_._2MnO_3 and oxygen-deficient La_0_._8Sr_0_._2MnO_3_−_δ films have been investigated. The result presents that the oxygen-deficient films annealed in vacuum show obvious increase of resistance and lattice parameter. With the sweeping voltage or temperature increasing, the resistance exhibits obvious bipolar switching effect, no forming process was needed. Oxygen deficiency in the annealed film leads to the formation of a structural disorder in the Mn–O–Mn conduction channel due to the accumulation of oxygen vacancies under high external electric field or temperatures and hence is believed to be responsible for the bipolar resistance switching effect and the enhanced resistivity compared with oxygen stoichiometric La_0_._8Sr_0_._2MnO_3 film. These results may be important for practical applications in photoelectric or storage devices and point to a useful direction for other oxidizing materials.

  13. Mechanism for Controlling the Dimer-Monomer Switch and Coupling Dimerization to Catalysis of the Severe Acute Respiratory Syndrome Coronavirus 3C-Like Protease

    Energy Technology Data Exchange (ETDEWEB)

    Shi,J.; Sivaraman, J.; Song, J.

    2008-01-01

    Unlike 3C protease, the severe acute respiratory syndrome coronavirus (SARS-CoV) 3C-like protease (3CLpro) is only enzymatically active as a homodimer and its catalysis is under extensive regulation by the unique extra domain. Despite intense studies, two puzzles still remain: (i) how the dimer-monomer switch is controlled and (ii) why dimerization is absolutely required for catalysis. Here we report the monomeric crystal structure of the SARS-CoV 3CLpro mutant R298A at a resolution of 1.75 Angstroms . Detailed analysis reveals that Arg298 serves as a key component for maintaining dimerization, and consequently, its mutation will trigger a cooperative switch from a dimer to a monomer. The monomeric enzyme is irreversibly inactivated because its catalytic machinery is frozen in the collapsed state, characteristic of the formation of a short 310-helix from an active-site loop. Remarkably, dimerization appears to be coupled to catalysis in 3CLpro through the use of overlapped residues for two networks, one for dimerization and another for the catalysis.

  14. Resistance switching memory in perovskite oxides

    International Nuclear Information System (INIS)

    Yan, Z.B.; Liu, J.-M.

    2015-01-01

    The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons and the stable crystal structure, which brings out multifunctionality such as ferroelectric, multiferroic, superconductor, and colossal magnetoresistance/electroresistance effect, etc. The existence of rich electronic phases, metal–insulator transition and the nonstoichiometric oxygen in perovskite oxide provides good platforms to insight into the resistive switching mechanisms. In this review, we first introduce the general characteristics of the resistance switching effects, the operation methods and the storage media. Then, the experimental evidences of conductive filaments, the transport and switching mechanisms, and the memory performances and enhancing methods of perovskite oxide based filamentary RRAM cells have been summarized and discussed. Subsequently, the switching mechanisms and the performances of the uniform RRAM cells associating with the carrier trapping/detrapping and the ferroelectric polarization switching have been discussed. Finally, the advices and outlook for further investigating the resistance switching and enhancing the memory performances are given

  15. The mechanism of vortex switching in magnetic nanodots under circular magnetic field. I. The resonance action of the field on the nanodot eigenmodes

    CERN Document Server

    Kovalev, A S

    2002-01-01

    The resonance activation of eigenmodes for a finite 2D easy-plane ferromagnet is considered to treat theoretically by the vortex switching in magnetic nanodots due to the action of external circular magnetic field. It is shown analytically that if the anisotropy is weak, i.e. the vortex has a nonzero polarity (total magnization along the z-axis), the process of the field action has a complicated nature. The circular field acts in a resonance way upon azimuthal system eigenmodes, in which magnetization depends on the azimuthal coordinate (as a direct resonance at the eigenfrequencies of these modes). The interaction of the azimuthal and symmetric modes (in which the magnetization does not depend on the azimuthal coordinate) via the applied field gives rise to complex parametric resonance at multifrequencies. The results obtained are compared with the data of previous numerical calculations.

  16. Switching strategies to optimize search

    International Nuclear Information System (INIS)

    Shlesinger, Michael F

    2016-01-01

    Search strategies are explored when the search time is fixed, success is probabilistic and the estimate for success can diminish with time if there is not a successful result. Under the time constraint the problem is to find the optimal time to switch a search strategy or search location. Several variables are taken into account, including cost, gain, rate of success if a target is present and the probability that a target is present. (paper: interdisciplinary statistical mechanics)

  17. Multiuser switched diversity scheduling schemes

    KAUST Repository

    Shaqfeh, Mohammad; Alnuweiri, Hussein M.; Alouini, Mohamed-Slim

    2012-01-01

    Multiuser switched-diversity scheduling schemes were recently proposed in order to overcome the heavy feedback requirements of conventional opportunistic scheduling schemes by applying a threshold-based, distributed, and ordered scheduling mechanism. The main idea behind these schemes is that slight reduction in the prospected multiuser diversity gains is an acceptable trade-off for great savings in terms of required channel-state-information feedback messages. In this work, we characterize the achievable rate region of multiuser switched diversity systems and compare it with the rate region of full feedback multiuser diversity systems. We propose also a novel proportional fair multiuser switched-based scheduling scheme and we demonstrate that it can be optimized using a practical and distributed method to obtain the feedback thresholds. We finally demonstrate by numerical examples that switched-diversity scheduling schemes operate within 0.3 bits/sec/Hz from the ultimate network capacity of full feedback systems in Rayleigh fading conditions. © 2012 IEEE.

  18. Charge transport through molecular switches

    International Nuclear Information System (INIS)

    Jan van der Molen, Sense; Liljeroth, Peter

    2010-01-01

    We review the fascinating research on charge transport through switchable molecules. In the past decade, detailed investigations have been performed on a great variety of molecular switches, including mechanically interlocked switches (rotaxanes and catenanes), redox-active molecules and photochromic switches (e.g. azobenzenes and diarylethenes). To probe these molecules, both individually and in self-assembled monolayers (SAMs), a broad set of methods have been developed. These range from low temperature scanning tunneling microscopy (STM) via two-terminal break junctions to larger scale SAM-based devices. It is generally found that the electronic coupling between molecules and electrodes has a profound influence on the properties of such molecular junctions. For example, an intrinsically switchable molecule may lose its functionality after it is contacted. Vice versa, switchable two-terminal devices may be created using passive molecules ('extrinsic switching'). Developing a detailed understanding of the relation between coupling and switchability will be of key importance for both future research and technology. (topical review)

  19. Charge transport through molecular switches

    Energy Technology Data Exchange (ETDEWEB)

    Jan van der Molen, Sense [Kamerlingh Onnes Laboratorium, Leiden University, Niels Bohrweg 2, 2333 CA Leiden (Netherlands); Liljeroth, Peter, E-mail: molen@physics.leidenuniv.n [Condensed Matter and Interfaces, Debye Institute for Nanomaterials Science, University of Utrecht, PO Box 80000, 3508 TA Utrecht (Netherlands)

    2010-04-07

    We review the fascinating research on charge transport through switchable molecules. In the past decade, detailed investigations have been performed on a great variety of molecular switches, including mechanically interlocked switches (rotaxanes and catenanes), redox-active molecules and photochromic switches (e.g. azobenzenes and diarylethenes). To probe these molecules, both individually and in self-assembled monolayers (SAMs), a broad set of methods have been developed. These range from low temperature scanning tunneling microscopy (STM) via two-terminal break junctions to larger scale SAM-based devices. It is generally found that the electronic coupling between molecules and electrodes has a profound influence on the properties of such molecular junctions. For example, an intrinsically switchable molecule may lose its functionality after it is contacted. Vice versa, switchable two-terminal devices may be created using passive molecules ('extrinsic switching'). Developing a detailed understanding of the relation between coupling and switchability will be of key importance for both future research and technology. (topical review)

  20. The Atlas load protection switch

    CERN Document Server

    Davis, H A; Dorr, G; Martínez, M; Gribble, R F; Nielsen, K E; Pierce, D; Parsons, W M

    1999-01-01

    Atlas is a high-energy pulsed-power facility under development to study materials properties and hydrodynamics experiments under extreme conditions. Atlas will implode heavy liner loads (m~45 gm) with a peak current of 27-32 MA delivered in 4 mu s, and is energized by 96, 240 kV Marx generators storing a total of 23 MJ. A key design requirement for Atlas is obtaining useful data for 95601130f all loads installed on the machine. Materials response calculations show current from a prefire can damage the load requiring expensive and time consuming replacement. Therefore, we have incorporated a set of fast-acting mechanical switches in the Atlas design to reduce the probability of a prefire damaging the load. These switches, referred to as the load protection switches, short the load through a very low inductance path during system charge. Once the capacitors have reached full charge, the switches open on a time scale short compared to the bank charge time, allowing current to flow to the load when the trigger pu...

  1. Intrinsic nanofilamentation in resistive switching

    KAUST Repository

    Wu, Xing

    2013-03-15

    Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

  2. Multiuser switched diversity scheduling schemes

    KAUST Repository

    Shaqfeh, Mohammad

    2012-09-01

    Multiuser switched-diversity scheduling schemes were recently proposed in order to overcome the heavy feedback requirements of conventional opportunistic scheduling schemes by applying a threshold-based, distributed, and ordered scheduling mechanism. The main idea behind these schemes is that slight reduction in the prospected multiuser diversity gains is an acceptable trade-off for great savings in terms of required channel-state-information feedback messages. In this work, we characterize the achievable rate region of multiuser switched diversity systems and compare it with the rate region of full feedback multiuser diversity systems. We propose also a novel proportional fair multiuser switched-based scheduling scheme and we demonstrate that it can be optimized using a practical and distributed method to obtain the feedback thresholds. We finally demonstrate by numerical examples that switched-diversity scheduling schemes operate within 0.3 bits/sec/Hz from the ultimate network capacity of full feedback systems in Rayleigh fading conditions. © 2012 IEEE.

  3. Optical packet switched networks

    DEFF Research Database (Denmark)

    Hansen, Peter Bukhave

    1999-01-01

    Optical packet switched networks are investigated with emphasis on the performance of the packet switch blocks. Initially, the network context of the optical packet switched network is described showing that a packet network will provide transparency, flexibility and bridge the granularity gap...... in interferometric wavelength converters is investigated showing that a 10 Gbit/s 19 4x4 swich blocks can be cascaded at a BER of 10-14. An analytical traffic model enables the calculation of the traffice performance of a WDM packet network. Hereby the importance of WDM and wavelegth conversion in the switch blocks...... is established as a flexible means to reduce the optical buffer, e.g., the number of fibre delay lines for a 16x16 switch block is reduced from 23 to 6 by going from 2 to 8 wavelength channels pr. inlet. Additionally, a component count analysis is carried out to illustrate the trade-offs in the switch block...

  4. Saturated Switching Systems

    CERN Document Server

    Benzaouia, Abdellah

    2012-01-01

    Saturated Switching Systems treats the problem of actuator saturation, inherent in all dynamical systems by using two approaches: positive invariance in which the controller is designed to work within a region of non-saturating linear behaviour; and saturation technique which allows saturation but guarantees asymptotic stability. The results obtained are extended from the linear systems in which they were first developed to switching systems with uncertainties, 2D switching systems, switching systems with Markovian jumping and switching systems of the Takagi-Sugeno type. The text represents a thoroughly referenced distillation of results obtained in this field during the last decade. The selected tool for analysis and design of stabilizing controllers is based on multiple Lyapunov functions and linear matrix inequalities. All the results are illustrated with numerical examples and figures many of them being modelled using MATLAB®. Saturated Switching Systems will be of interest to academic researchers in con...

  5. Effective switching frequency multiplier inverter

    Science.gov (United States)

    Su, Gui-Jia [Oak Ridge, TN; Peng, Fang Z [Okemos, MI

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  6. FreeSWITCH Cookbook

    CERN Document Server

    Minessale, Anthony

    2012-01-01

    This is a problem-solution approach to take your FreeSWITCH skills to the next level, where everything is explained in a practical way. If you are a system administrator, hobbyist, or someone who uses FreeSWITCH on a regular basis, this book is for you. Whether you are a FreeSWITCH expert or just getting started, this book will take your skills to the next level.

  7. Elements of magnetic switching

    International Nuclear Information System (INIS)

    Aaland, K.

    1983-01-01

    This chapter describes magnetic switching as a method of connecting a capacitor bank (source) to a load; reviews several successful applications of magnetic switching, and discusses switching transformers, limitations and future possibilities. Some of the inflexibility and especially the high cost of magnetic materials may be overcome with the availability of the new splash cooled ribbons (Metglas). Experience has shown that magnetics works despite shock, radiation or noise interferences

  8. Pemodelan Markov Switching Autoregressive

    OpenAIRE

    Ariyani, Fiqria Devi; Warsito, Budi; Yasin, Hasbi

    2014-01-01

    Transition from depreciation to appreciation of exchange rate is one of regime switching that ignored by classic time series model, such as ARIMA, ARCH, or GARCH. Therefore, economic variables are modeled by Markov Switching Autoregressive (MSAR) which consider the regime switching. MLE is not applicable to parameters estimation because regime is an unobservable variable. So that filtering and smoothing process are applied to see the regime probabilities of observation. Using this model, tran...

  9. Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol-gel method with forming-free operation

    Science.gov (United States)

    Jian, Wen-Yi; You, Hsin-Chiang; Wu, Cheng-Yen

    2018-01-01

    In this work, we used a sol-gel process to fabricate a ZnO-ZrO2-stacked resistive switching random access memory (ReRAM) device and investigated its switching mechanism. The Gibbs free energy in ZnO, which is higher than that in ZrO2, facilitates the oxidation and reduction reactions of filaments in the ZnO layer. The current-voltage (I-V) characteristics of the device revealed a forming-free operation because of nonlattice oxygen in the oxide layer. In addition, the device can operate under bipolar or unipolar conditions with a reset voltage of 0 to ±2 V, indicating that in this device, Joule heating dominates at reset and the electric field dominates in the set process. Furthermore, the characteristics reveal why the fabricated device exhibits a greater discrete distribution phenomenon for the set voltage than for the reset voltage. These results will enable the fabrication of future ReRAM devices with double-layer oxide structures with improved characteristics.

  10. Optimal switching using coherent control

    DEFF Research Database (Denmark)

    Kristensen, Philip Trøst; Heuck, Mikkel; Mørk, Jesper

    2013-01-01

    that the switching time, in general, is not limited by the cavity lifetime. Therefore, the total energy required for switching is a more relevant figure of merit than the switching speed, and for a particular two-pulse switching scheme we use calculus of variations to optimize the switching in terms of input energy....

  11. Switched reluctance motor drives

    Indian Academy of Sciences (India)

    Davis RM, Ray WF, Blake RJ 1981 Inverter drive for switched reluctance: circuits and component ratings. Inst. Elec. Eng. Proc. B128: 126-136. Ehsani M. 1991 Position Sensor elimination technique for the switched reluctance motor drive. US Patent No. 5,072,166. Ehsani M, Ramani K R 1993 Direct control strategies based ...

  12. Manually operated coded switch

    International Nuclear Information System (INIS)

    Barnette, J.H.

    1978-01-01

    The disclosure related to a manually operated recodable coded switch in which a code may be inserted, tried and used to actuate a lever controlling an external device. After attempting a code, the switch's code wheels must be returned to their zero positions before another try is made

  13. Switch on, switch off: stiction in nanoelectromechanical switches

    KAUST Repository

    Wagner, Till J W

    2013-06-13

    We present a theoretical investigation of stiction in nanoscale electromechanical contact switches. We develop a mathematical model to describe the deflection of a cantilever beam in response to both electrostatic and van der Waals forces. Particular focus is given to the question of whether adhesive van der Waals forces cause the cantilever to remain in the \\'ON\\' state even when the electrostatic forces are removed. In contrast to previous studies, our theory accounts for deflections with large slopes (i.e. geometrically nonlinear). We solve the resulting equations numerically to study how a cantilever beam adheres to a rigid electrode: transitions between \\'free\\', \\'pinned\\' and \\'clamped\\' states are shown to be discontinuous and to exhibit significant hysteresis. Our findings are compared to previous results from linearized models and the implications for nanoelectromechanical cantilever switch design are discussed. © 2013 IOP Publishing Ltd.

  14. Avalanche photoconductive switching

    Science.gov (United States)

    Pocha, M. D.; Druce, R. L.; Wilson, M. J.; Hofer, W. W.

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV to 35 kV and rise times of 300 to 500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10(exp 3) to over 10(exp 5). Switches with two very different physical configurations and with two different illumination wavelengths (1.06 micrometer, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation.

  15. Avalanche photoconductive switching

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L.; Wilson, M.J.; Hofer, W.W.

    1989-01-01

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV--35 kV and rise times of 300--500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10{sup 3} to over 10{sup 5}. Switches with two very different physical configurations and with two different illumination wavelengths (1.06 {mu}m, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation. 3 refs., 6 figs.

  16. Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

    Science.gov (United States)

    Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

    2017-12-01

    This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

  17. Photo-stimulated resistive switching of ZnO nanorods

    International Nuclear Information System (INIS)

    Park, Jinjoo; Lee, Seunghyup; Yong, Kijung

    2012-01-01

    Resistive switching memory devices are promising candidates for emerging memory technologies because they yield outstanding device performance. Storage mechanisms for achieving high-density memory applications have been developed; however, so far many of them exhibit typical resistive switching behavior from the limited controlling conditions. In this study, we introduce photons as an unconventional stimulus for activating resistive switching behaviors. First, we compare the resistive switching behavior in light and dark conditions to describe how resistive switching memories can benefit from photons. Second, we drive the switching of resistance not by the electrical stimulus but only by the modulation of photon. ZnO nanorods were employed as a model system to demonstrate photo-stimulated resistive switching in high-surface-area nanomaterials, in which photo-driven surface states strongly affect their photoconductivity and resistance states. (paper)

  18. Analyses of a whole-genome inter-clade recombination map of hepatitis delta virus suggest a host polymerase-driven and viral RNA structure-promoted template-switching mechanism for viral RNA recombination

    Science.gov (United States)

    Chao, Mei; Wang, Tzu-Chi; Lin, Chia-Chi; Yung-Liang Wang, Robert; Lin, Wen-Bin; Lee, Shang-En; Cheng, Ying-Yu; Yeh, Chau-Ting; Iang, Shan-Bei

    2017-01-01

    The genome of hepatitis delta virus (HDV) is a 1.7-kb single-stranded circular RNA that folds into an unbranched rod-like structure and has ribozyme activity. HDV redirects host RNA polymerase(s) (RNAP) to perform viral RNA-directed RNA transcription. RNA recombination is known to contribute to the genetic heterogeneity of HDV, but its molecular mechanism is poorly understood. Here, we established a whole-genome HDV-1/HDV-4 recombination map using two cloned sequences coexisting in cultured cells. Our functional analyses of the resulting chimeric delta antigens (the only viral-encoded protein) and recombinant genomes provide insights into how recombination promotes the genotypic and phenotypic diversity of HDV. Our examination of crossover distribution and subsequent mutagenesis analyses demonstrated that ribozyme activity on HDV genome, which is required for viral replication, also contributes to the generation of an inter-clade junction. These data provide circumstantial evidence supporting our contention that HDV RNA recombination occurs via a replication-dependent mechanism. Furthermore, we identify an intrinsic asymmetric bulge on the HDV genome, which appears to promote recombination events in the vicinity. We therefore propose a mammalian RNAP-driven and viral-RNA-structure-promoted template-switching mechanism for HDV genetic recombination. The present findings improve our understanding of the capacities of the host RNAP beyond typical DNA-directed transcription. PMID:28977829

  19. Manipulating Si(100) at 5 K using qPlus frequency modulated atomic force microscopy: Role of defects and dynamics in the mechanical switching of atoms

    Science.gov (United States)

    Sweetman, A.; Jarvis, S.; Danza, R.; Bamidele, J.; Kantorovich, L.; Moriarty, P.

    2011-08-01

    We use small-amplitude qPlus frequency modulated atomic force microscopy (FM-AFM), at 5 K, to investigate the atomic-scale mechanical stability of the Si(100) surface. By operating at zero applied bias the effect of tunneling electrons is eliminated, demonstrating that surface manipulation can be performed by solely mechanical means. Striking differences in surface response are observed between different regions of the surface, most likely due to variations in strain associated with the presence of surface defects. We investigate the variation in local energy surface by ab initio simulation, and comment on the dynamics observed during force spectroscopy.

  20. Energy losses in switches

    International Nuclear Information System (INIS)

    Martin, T.H.; Seamen, J.F.; Jobe, D.O.

    1993-01-01

    The authors experiments show energy losses between 2 and 10 times that of the resistive time predictions. The experiments used hydrogen, helium, air, nitrogen, SF 6 polyethylene, and water for the switching dielectric. Previously underestimated switch losses have caused over predicting the accelerator outputs. Accurate estimation of these losses is now necessary for new high-efficiency pulsed power devices where the switching losses constitute the major portion of the total energy loss. They found that the switch energy losses scale as (V peak I peak ) 1.1846 . When using this scaling, the energy losses in any of the tested dielectrics are almost the same. This relationship is valid for several orders of magnitude and suggested a theoretical basis for these results. Currents up to .65 MA, with voltages to 3 MV were applied to various gaps during these experiments. The authors data and the developed theory indicates that the switch power loss continues for a much longer time than the resistive time, with peak power loss generally occurring at peak current in a ranging discharge instead of the early current time. All of the experiments were circuit code modeled after developing a new switch loss version based on the theory. The circuit code predicts switch energy loss and peak currents as a function of time. During analysis of the data they noticed slight constant offsets between the theory and data that depended on the dielectric. They modified the plasma conductivity for each tested dielectric to lessen this offset

  1. JUNOS Enterprise Switching

    CERN Document Server

    Reynolds, Harry

    2009-01-01

    JUNOS Enterprise Switching is the only detailed technical book on Juniper Networks' new Ethernet-switching EX product platform. With this book, you'll learn all about the hardware and ASIC design prowess of the EX platform, as well as the JUNOS Software that powers it. Not only is this extremely practical book a useful, hands-on manual to the EX platform, it also makes an excellent study guide for certification exams in the JNTCP enterprise tracks. The authors have based JUNOS Enterprise Switching on their own Juniper training practices and programs, as well as the configuration, maintenanc

  2. Switch mode power supply

    International Nuclear Information System (INIS)

    Kim, Hui Jun

    1993-06-01

    This book concentrates on switch mode power supply. It has four parts, which are introduction of switch mode power supply with DC-DC converter such as Buck converter boost converter, Buck-boost converter and PWM control circuit, explanation for SMPS with DC-DC converter modeling and power mode control, resonance converter like resonance switch, converter, multi resonance converter and series resonance and parallel resonance converters, basic test of SMPS with PWM control circuit, Buck converter, Boost converter, flyback converter, forward converter and IC for control circuit.

  3. Fast superconducting magnetic field switch

    Science.gov (United States)

    Goren, Yehuda; Mahale, Narayan K.

    1996-01-01

    The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles.

  4. Fast superconducting magnetic field switch

    International Nuclear Information System (INIS)

    Goren, Y.; Mahale, N.K.

    1996-01-01

    The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles. 6 figs

  5. Behavioral plasticity through the modulation of switch neurons.

    Science.gov (United States)

    Vassiliades, Vassilis; Christodoulou, Chris

    2016-02-01

    A central question in artificial intelligence is how to design agents capable of switching between different behaviors in response to environmental changes. Taking inspiration from neuroscience, we address this problem by utilizing artificial neural networks (NNs) as agent controllers, and mechanisms such as neuromodulation and synaptic gating. The novel aspect of this work is the introduction of a type of artificial neuron we call "switch neuron". A switch neuron regulates the flow of information in NNs by selectively gating all but one of its incoming synaptic connections, effectively allowing only one signal to propagate forward. The allowed connection is determined by the switch neuron's level of modulatory activation which is affected by modulatory signals, such as signals that encode some information about the reward received by the agent. An important aspect of the switch neuron is that it can be used in appropriate "switch modules" in order to modulate other switch neurons. As we show, the introduction of the switch modules enables the creation of sequences of gating events. This is achieved through the design of a modulatory pathway capable of exploring in a principled manner all permutations of the connections arriving on the switch neurons. We test the model by presenting appropriate architectures in nonstationary binary association problems and T-maze tasks. The results show that for all tasks, the switch neuron architectures generate optimal adaptive behaviors, providing evidence that the switch neuron model could be a valuable tool in simulations where behavioral plasticity is required. Copyright © 2015 Elsevier Ltd. All rights reserved.

  6. Spontaneous Symmetric Breaking Mechanism in the Evolution of Strategic Alliance Based on Markov Switching Model%基于马尔科夫状态转换的战略联盟自发性对称破缺机制

    Institute of Scientific and Technical Information of China (English)

    宋波; 徐飞

    2013-01-01

    This paper focused on the spontaneous symmetry breaking in the evolution of strategic alliance, from systematic perspective, viewed strategic alliance as a complex social economic system, from time, space, material, information and energy five dimensions. And the Markov random model was introduced into the study on the status switching of strategic alliance, and then the spontaneous symmetric breaking mechanism of strategic alliance was illustrated based on the Markov switching model, in order to predict the equilibrium status of strategic alliance. This paper provides a new theory perspective for the research on the stability and evolution of strategic alliance.%针对企业战略联盟演变过程中的自发性对称破缺现象,以系统观的视角,将战略联盟视作一个复杂社会经济系统,从时间、空间、物质、信息和能量5个维度描述战略联盟系统的状态,并将马尔科夫过程的状态随机转换模型引入战略联盟状态迁移的研究,深入阐述联盟自发性对称破缺机制,从而预测联盟的平衡状态,为战略联盟演变及稳定性的研究提供了新的理论视角.

  7. Investigation of Random Switching Driven by a Poisson Point Process

    DEFF Research Database (Denmark)

    Simonsen, Maria; Schiøler, Henrik; Leth, John-Josef

    2015-01-01

    This paper investigates the switching mechanism of a two-dimensional switched system, when the switching events are generated by a Poisson point process. A model, in the shape of a stochastic process, for such a system is derived and the distribution of the trajectory's position is developed...... together with marginal density functions for the coordinate functions. Furthermore, the joint probability distribution is given explicitly....

  8. Optical switching systems using nanostructures

    DEFF Research Database (Denmark)

    Stubkjær, Kristian

    2004-01-01

    High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems.......High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems....

  9. A numerical simulation model of valence-change-based resistive switching

    OpenAIRE

    Marchewka, Astrid

    2017-01-01

    Due to their superior scalability and performance, nanoscale resistive switches based on the valence-change mechanism are considered promising candidates for future nonvolatile memory and logic applications. These devices are metal-oxide-metal structures that can be reversibly switched between different resistance states by electrical signals. Typically, they contain one Schottky-like and one ohmic-like metal-oxide contact and exhibit bipolar switching. The switching mechanism and the initial...

  10. Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films

    Science.gov (United States)

    Rosário, Carlos M. M.; Thöner, Bo; Schönhals, Alexander; Menzel, Stephan; Wuttig, Matthias; Waser, Rainer; Sobolev, Nikolai A.; Wouters, Dirk J.

    2018-05-01

    Conductive filaments play a key role in redox-based resistive random access memory (ReRAM) devices based on the valence change mechanism, where the change of the resistance is ascribed to the modulation of the oxygen content in a local region of these conductive filaments. However, a deep understanding of the filaments' composition and structure is still a matter of debate. We approached the problem by comparing the electronic transport, at temperatures from 300 K down to 2 K, in the filaments and in TaOx films exhibiting a substoichiometric oxygen content. The filaments were created in Ta (15 nm)/Ta2O5 (5 nm)/Pt crossbar ReRAM structures. In the TaOx thin films with various oxygen contents, the in-plane transport was studied. There is a close similarity between the electrical properties of the conductive filaments in the ReRAM devices and of the TaOx films with x ˜ 1, evidencing also no dimensionality difference for the electrical transport. More specifically, for both systems there are two different conduction processes: one in the higher temperature range (from 50 K up to ˜300 K), where the conductivity follows a √{ T } dependence, and one at lower temperatures (<50 K), where the conductivity follows the exp(-1 / √{ T } ) dependence. This suggests a strong similarity between the material composition and structure of the filaments and those of the substoichiometric TaOx films. We also discuss the temperature dependence of the conductivity in the framework of possible transport mechanisms, mainly of those normally observed for granular metals.

  11. Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure.

    Science.gov (United States)

    Chakrabarti, Somsubhra; Maikap, Siddheswar; Samanta, Subhranu; Jana, Surajit; Roy, Anisha; Qiu, Jian-Tai

    2017-10-04

    The resistive switching characteristics of a scalable IrO x /Al 2 O 3 /W cross-point structure and its mechanism for pH/H 2 O 2 sensing along with glucose detection have been investigated for the first time. Porous IrO x and Ir 3+ /Ir 4+ oxidation states are observed via high-resolution transmission electron microscope, field-emission scanning electron spectroscopy, and X-ray photo-electron spectroscopy. The 20 nm-thick IrO x devices in sidewall contact show consecutive long dc cycles at a low current compliance (CC) of 10 μA, multi-level operation with CC varying from 10 μA to 100 μA, and long program/erase endurance of >10 9 cycles with 100 ns pulse width. IrO x with a thickness of 2 nm in the IrO x /Al 2 O 3 /SiO 2 /p-Si structure has shown super-Nernstian pH sensitivity of 115 mV per pH, and detection of H 2 O 2 over the range of 1-100 nM is also achieved owing to the porous and reduction-oxidation (redox) characteristics of the IrO x membrane, whereas a pure Al 2 O 3 /SiO 2 membrane does not show H 2 O 2 sensing. A simulation based on Schottky, hopping, and Fowler-Nordheim tunneling conduction, and a redox reaction, is proposed. The experimental I-V curve matches very well with simulation. The resistive switching mechanism is owing to O 2- ion migration, and the redox reaction of Ir 3+ /Ir 4+ at the IrO x /Al 2 O 3 interface through H 2 O 2 sensing as well as Schottky barrier height modulation is responsible. Glucose at a low concentration of 10 pM is detected using a completely new process in the IrO x /Al 2 O 3 /W cross-point structure. Therefore, this cross-point memory shows a method for low cost, scalable, memory with low current, multi-level operation, which will be useful for future highly dense three-dimensional (3D) memory and as a bio-sensor for the future diagnosis of human diseases.

  12. The Role of Code-Switching in Bilingual Creativity

    Science.gov (United States)

    Kharkhurin, Anatoliy V.; Wei, Li

    2015-01-01

    This study further explores the theme of bilingual creativity with the present focus on code-switching. Specifically, it investigates whether code-switching practice has an impact on creativity. In line with the previous research, selective attention was proposed as a potential cognitive mechanism, which on the one hand would benefit from…

  13. Note: Cryogenic heat switch with stepper motor actuator

    Energy Technology Data Exchange (ETDEWEB)

    Melcher, B. S., E-mail: bsmelche@syr.edu; Timbie, P. T., E-mail: pttimbie@wisc.edu [Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (United States)

    2015-12-15

    A mechanical cryogenic heat switch has been developed using a commercially available stepper motor and control electronics. The motor requires 4 leads, each carrying a maximum, pulsed current of 0.5 A. With slight modifications of the stepper motor, the switch functions reliably in vacuum at temperatures between 300 K and 4 K. The switch generates a clamping force of 262 N at room temperature. At 4 K it achieves an “on state” thermal conductance of 5.04 mW/K and no conductance in the “off state.” The switch is optimized for cycling an adiabatic demagnetization refrigerator.

  14. A Superconducting Dual-Channel Photonic Switch.

    Science.gov (United States)

    Srivastava, Yogesh Kumar; Manjappa, Manukumara; Cong, Longqing; Krishnamoorthy, Harish N S; Savinov, Vassili; Pitchappa, Prakash; Singh, Ranjan

    2018-06-05

    The mechanism of Cooper pair formation and its underlying physics has long occupied the investigation into high temperature (high-T c ) cuprate superconductors. One of the ways to unravel this is to observe the ultrafast response present in the charge carrier dynamics of a photoexcited specimen. This results in an interesting approach to exploit the dissipation-less dynamic features of superconductors to be utilized for designing high-performance active subwavelength photonic devices with extremely low-loss operation. Here, dual-channel, ultrafast, all-optical switching and modulation between the resistive and the superconducting quantum mechanical phase is experimentally demonstrated. The ultrafast phase switching is demonstrated via modulation of sharp Fano resonance of a high-T c yttrium barium copper oxide (YBCO) superconducting metamaterial device. Upon photoexcitation by femtosecond light pulses, the ultrasensitive cuprate superconductor undergoes dual dissociation-relaxation dynamics, with restoration of superconductivity within a cycle, and thereby establishes the existence of dual switching windows within a timescale of 80 ps. Pathways are explored to engineer the secondary dissociation channel which provides unprecedented control over the switching speed. Most importantly, the results envision new ways to accomplish low-loss, ultrafast, and ultrasensitive dual-channel switching applications that are inaccessible through conventional metallic and dielectric based metamaterials. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Task uncertainty can account for mixing and switch costs in task-switching.

    Directory of Open Access Journals (Sweden)

    Patrick S Cooper

    Full Text Available Cognitive control is required in situations that involve uncertainty or change, such as when resolving conflict, selecting responses and switching tasks. Recently, it has been suggested that cognitive control can be conceptualised as a mechanism which prioritises goal-relevant information to deal with uncertainty. This hypothesis has been supported using a paradigm that requires conflict resolution. In this study, we examine whether cognitive control during task switching is also consistent with this notion. We used information theory to quantify the level of uncertainty in different trial types during a cued task-switching paradigm. We test the hypothesis that differences in uncertainty between task repeat and task switch trials can account for typical behavioural effects in task-switching. Increasing uncertainty was associated with less efficient performance (i.e., slower and less accurate, particularly on switch trials and trials that afford little opportunity for advance preparation. Interestingly, both mixing and switch costs were associated with a common episodic control process. These results support the notion that cognitive control may be conceptualised as an information processor that serves to resolve uncertainty in the environment.

  16. Task Uncertainty Can Account for Mixing and Switch Costs in Task-Switching

    Science.gov (United States)

    Rennie, Jaime L.

    2015-01-01

    Cognitive control is required in situations that involve uncertainty or change, such as when resolving conflict, selecting responses and switching tasks. Recently, it has been suggested that cognitive control can be conceptualised as a mechanism which prioritises goal-relevant information to deal with uncertainty. This hypothesis has been supported using a paradigm that requires conflict resolution. In this study, we examine whether cognitive control during task switching is also consistent with this notion. We used information theory to quantify the level of uncertainty in different trial types during a cued task-switching paradigm. We test the hypothesis that differences in uncertainty between task repeat and task switch trials can account for typical behavioural effects in task-switching. Increasing uncertainty was associated with less efficient performance (i.e., slower and less accurate), particularly on switch trials and trials that afford little opportunity for advance preparation. Interestingly, both mixing and switch costs were associated with a common episodic control process. These results support the notion that cognitive control may be conceptualised as an information processor that serves to resolve uncertainty in the environment. PMID:26107646

  17. Imprint switch mutations at Rasgrf1 support conflict hypothesis of imprinting and define a growth control mechanism upstream of IGF1

    Science.gov (United States)

    Drake, Nadia M.; Park, Yoon Jung; Shirali, Aditya S.; Cleland, Thomas A.

    2010-01-01

    Rasgrf1 is imprinted and expressed preferentially from the paternal allele in neonatal mouse brain. At weaning, expression becomes biallelic. Using a mouse model, we assayed the effects of perturbing imprinted Rasgrf1 expression in mice with the following imprinted expression patterns: monoallelic paternal (wild type), monoallelic maternal (maternal only), biallelic (both alleles transcribed), and null (neither allele transcribed). All genotypes exhibit biallelic expression around weaning. Consequences of this transient imprinting perturbation are manifested as overall size differences that correspond to the amount of neonatal Rasgrf1 expressed and are persistent, extending into adulthood. Biallelic mice are the largest and overexpress Rasgrf1 relative to wild-type mice, null mice are the smallest and underexpress Rasgrf1 as neonates, and the two monoallelically expressing genotypes are intermediate and indistinguishable from one another, in both size and Rasgrf1 expression level. Importantly, these data support one of the key underlying assumptions of the “conflict hypothesis” that describes the evolution of genomic imprinting in mammals and supposes that equivalent amounts of imprinted gene expression produce equivalent phenotypes, regardless of which parental allele is transcribed. Concordant with the difference in overall body size, we identify differences in IGF-1 levels, both in serum protein and as liver transcript, and identify additional differential expression of components upstream of IGF-1 release in the GH/IGF-1 axis. These data suggest that imprinted Rasgrf1 expression affects GH/IGF-1 axis function, and that the consequences of Rasgrf1 inputs to this axis persist beyond the time period when expression is restricted via epigenetic mechanisms, suggesting that proper neonatal Rasgrf1 expression levels are critical for development. PMID:19513790

  18. If You Stay, It Might Be Easier: Switch Costs from Comprehension to Production in a Joint Switching Task

    Science.gov (United States)

    Gambi, Chiara; Hartsuiker, Robert J.

    2016-01-01

    Switching language is costly for bilingual speakers and listeners, suggesting that language control is effortful in both modalities. But are the mechanisms underlying language control similar across modalities? In this study, we attempted to answer this question by testing whether bilingual speakers incur a cost when switching to a different…

  19. Optical computer switching network

    Science.gov (United States)

    Clymer, B.; Collins, S. A., Jr.

    1985-01-01

    The design for an optical switching system for minicomputers that uses an optical spatial light modulator such as a Hughes liquid crystal light valve is presented. The switching system is designed to connect 80 minicomputers coupled to the switching system by optical fibers. The system has two major parts: the connection system that connects the data lines by which the computers communicate via a two-dimensional optical matrix array and the control system that controls which computers are connected. The basic system, the matrix-based connecting system, and some of the optical components to be used are described. Finally, the details of the control system are given and illustrated with a discussion of timing.

  20. Stochastic Switching Dynamics

    DEFF Research Database (Denmark)

    Simonsen, Maria

    This thesis treats stochastic systems with switching dynamics. Models with these characteristics are studied from several perspectives. Initially in a simple framework given in the form of stochastic differential equations and, later, in an extended form which fits into the framework of sliding...... mode control. It is investigated how to understand and interpret solutions to models of switched systems, which are exposed to discontinuous dynamics and uncertainties (primarily) in the form of white noise. The goal is to gain knowledge about the performance of the system by interpreting the solution...

  1. Optical burst switching based satellite backbone network

    Science.gov (United States)

    Li, Tingting; Guo, Hongxiang; Wang, Cen; Wu, Jian

    2018-02-01

    We propose a novel time slot based optical burst switching (OBS) architecture for GEO/LEO based satellite backbone network. This architecture can provide high speed data transmission rate and high switching capacity . Furthermore, we design the control plane of this optical satellite backbone network. The software defined network (SDN) and network slice (NS) technologies are introduced. Under the properly designed control mechanism, this backbone network is flexible to support various services with diverse transmission requirements. Additionally, the LEO access and handoff management in this network is also discussed.

  2. Resistance switching in silver - manganite contacts

    International Nuclear Information System (INIS)

    Gomez-Marlasca, F; Levy, P

    2009-01-01

    We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

  3. Resistance switching in silver - manganite contacts

    Energy Technology Data Exchange (ETDEWEB)

    Gomez-Marlasca, F [Materia Condensada GIA GAIANN CAC -CNEA, and Instituto de Nanociencia y Nanotecnologia, CNEA, Gral Paz 1499 (1650) San Martin, Pcia. Buenos Aires (Argentina); Levy, P, E-mail: levy@cnea.gov.a

    2009-05-01

    We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

  4. Complementary resistive switching in BaTiO{sub 3}/NiO bilayer with opposite switching polarities

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuo [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Institut d’Electronique de Micro-électronique et de Nanotechnologie (IEMN), CNRS, Université des Sciences et Technologies de Lille, avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq cedex (France); Wei, Xianhua, E-mail: weixianhua@swust.edu.cn [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Lei, Yao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yuan, Xincai [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Zeng, Huizhong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China)

    2016-12-15

    Graphical abstract: Au/BaTiO{sub 3}/NiO/Pt bilayer device shows complementary resistive switching (CRS) without electroforming which is mainly ascribed to anti-serial stack of two RRAM cells with bipolar behaviors. - Highlights: • Complementary resistive switching (CRS) has been investigated in Au/BaTiO{sub 3}/NiO/Pt by stacking the two elements with different switching types. • The realization of complementary resistive switching (CRS) is mainly ascribed to the anti-serial stack of two RRAM cells with bipolar behaviors. • Complementary resistive switching (CRS) in bilayer is effective to solve the sneak current problem briefly and economically. - Abstract: Resistive switching behaviors have been investigated in the Au/BaTiO{sub 3}/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO{sub 3} thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I–V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO{sub 3} and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  5. A nanoplasmonic switch based on molecular machines

    KAUST Repository

    Zheng, Yue Bing

    2009-06-01

    We aim to develop a molecular-machine-driven nanoplasmonic switch for its use in future nanophotonic integrated circuits (ICs) that have applications in optical communication, information processing, biological and chemical sensing. Experimental data show that an Au nanodisk array, coated with rotaxane molecular machines, switches its localized surface plasmon resonances (LSPR) reversibly when it is exposed to chemical oxidants and reductants. Conversely, bare Au nanodisks and disks coated with mechanically inert control compounds, do not display the same switching behavior. Along with calculations based on time-dependent density functional theory (TDDFT), these observations suggest that the nanoscale movements within surface-bound "molecular machines" can be used as the active components in plasmonic devices. ©2009 IEEE.

  6. Plasma opening switch experiments on supermite

    International Nuclear Information System (INIS)

    Mendel, C.W.; Quintenz, J.P.; Rosenthal, S.E.; Savage, M.E.

    1988-01-01

    Experiments using plasma opening switches with fast field coils and plasmas injected on slow magnetic fields are described. Data showing the measurement of the field penetration into the volume that initially held the plasma fill will be shown. Assuming the plasma is mostly pushed back from the coil, rather than being penetrated by the magnetic field allows the density to be calculated, and gives densities of a few times 10 13 cm -3 for our usual operating range. The data makes it clear that the switch is open well before the initial plasma volume is completely penetrated by the magnetic fields. Additional measurements relating to the magnetic field penetration distance and physical penetration mechanism are presented. Other data presented show a magnetic insulation problem which must be solved before very large voltage multiplication can be accomplished with sufficient switch efficiency

  7. Ultrafast gas switching experiments

    International Nuclear Information System (INIS)

    Frost, C.A.; Martin, T.H.; Patterson, P.E.; Rinehart, L.F.; Rohwein, G.J.; Roose, L.D.; Aurand, J.F.; Buttram, M.T.

    1993-01-01

    We describe recent experiments which studied the physics of ultrafast gas breakdown under the extreme overvoltages which occur when a high pressure gas switch is pulse charged to hundreds of kV in 1 ns or less. The highly overvolted peaking gaps produce powerful electromagnetic pulses with risetimes Khz at > 100 kV/m E field

  8. An integrated circuit switch

    Science.gov (United States)

    Bonin, E. L.

    1969-01-01

    Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

  9. The Octopus switch

    NARCIS (Netherlands)

    Havinga, Paul J.M.

    2000-01-01

    This chapter1 discusses the interconnection architecture of the Mobile Digital Companion. The approach to build a low-power handheld multimedia computer presented here is to have autonomous, reconfigurable modules such as network, video and audio devices, interconnected by a switch rather than by a

  10. Untriggered water switching

    International Nuclear Information System (INIS)

    Van Devender, J.P.; Martin, T.H.

    Recent experiments indicate that synchronous untriggered multichannel switching in water will permit the development of relatively simple, ultra-low impedance, short pulse, relativistic electron beam (REB) accelerators. These experiments resulted in the delivery of a 1.5 MV, 0.75 MA, 15 ns pulse into a two-ohm line with a current risetime of 2 x 10 14 A/sec. The apparatus consisted of a 3 MV Marx generator and a series of three 112 cm wide strip water lines separated by two edge-plane water-gap switches. The Marx generator charged the first line in less than 400 ns. The first switch then formed five or more channels. The second line was charged in 60 ns and broke down with 10 to 25 channels at a mean field of 1.6 MV/cm. The closure time of each spark channel along both switches was measured with a streak camera and showed low jitter. The resulting fast pulse line construction is simpler and should provide considerable costs savings from previous designs. Multiples of these low impedance lines in parallel can be employed to obtain power levels in the 10 14 W range for REB fusion studies. (U.S.)

  11. Launched electrons in plasma opening switches

    International Nuclear Information System (INIS)

    Mendel, C.W. Jr.; Rochau, G.E.; Sweeney, M.A.; McDaniel, D.H.; Quintenz, J.P.; Savage, M.E.; Lindman, E.L.; Kindel, J.M.

    1989-01-01

    Plasma opening switches have provided a means to improve the characteristics of super-power pulse generators. Recent advances involving plasma control with fast and slow magnetic fields have made these switches more versatile, allowing for improved switch uniformity, triggering, and opening current levels that are set by the level of auxiliary fields. Such switches necessarily involve breaks in the translational symmetry of the transmission line geometry and therefore affect the electron flow characteristics of the line. These symmetry breaks are the result of high electric field regions caused by plasma conductors remaining in the transmission line, ion beams crossing the line, or auxilliary magnetic field regions. Symmetry breaks cause the canonical momentum of the electrons to change, thereby moving them away from the cathode. Additional electrons are pulled from the cathode into the magnetically insulated flow, resulting in an excess of electron flow over that expected for the voltage and line current downstream of the switch. We call these electrons ''launched electrons''. Unless they are recaptured at the cathode or else are fed into the load and used beneficially, they cause a large power loss downstream. This paper will show examples of SuperMite and PBFA II data showing these losses, explain the tools we are using to study them, and discuss the mechanisms we will employ to mitigate the problem. The losses will be reduced primarily by reducing the amount of launched electron flow. 7 refs., 9 figs

  12. Two Bistable Switches Govern M Phase Entry.

    Science.gov (United States)

    Mochida, Satoru; Rata, Scott; Hino, Hirotsugu; Nagai, Takeharu; Novák, Béla

    2016-12-19

    The abrupt and irreversible transition from interphase to M phase is essential to separate DNA replication from chromosome segregation. This transition requires the switch-like phosphorylation of hundreds of proteins by the cyclin-dependent kinase 1 (Cdk1):cyclin B (CycB) complex. Previous studies have ascribed these switch-like phosphorylations to the auto-activation of Cdk1:CycB through the removal of inhibitory phosphorylations on Cdk1-Tyr15 [1, 2]. The positive feedback in Cdk1 activation creates a bistable switch that makes mitotic commitment irreversible [2-4]. Here, we surprisingly find that Cdk1 auto-activation is dispensable for irreversible, switch-like mitotic entry due to a second mechanism, whereby Cdk1:CycB inhibits its counteracting phosphatase (PP2A:B55). We show that the PP2A:B55-inhibiting Greatwall (Gwl)-endosulfine (ENSA) pathway is both necessary and sufficient for switch-like phosphorylations of mitotic substrates. Using purified components of the Gwl-ENSA pathway in a reconstituted system, we found a sharp Cdk1 threshold for phosphorylation of a luminescent mitotic substrate. The Cdk1 threshold to induce mitotic phosphorylation is distinctly higher than the Cdk1 threshold required to maintain these phosphorylations-evidence for bistability. A combination of mathematical modeling and biochemical reconstitution show that the bistable behavior of the Gwl-ENSA pathway emerges from its mutual antagonism with PP2A:B55. Our results demonstrate that two interlinked bistable mechanisms provide a robust solution for irreversible and switch-like mitotic entry. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. Control synthesis of switched systems

    CERN Document Server

    Zhao, Xudong; Niu, Ben; Wu, Tingting

    2017-01-01

    This book offers its readers a detailed overview of the synthesis of switched systems, with a focus on switching stabilization and intelligent control. The problems investigated are not only previously unsolved theoretically but also of practical importance in many applications: voltage conversion, naval piloting and navigation and robotics, for example. The book considers general switched-system models and provides more efficient design methods to bring together theory and application more closely than was possible using classical methods. It also discusses several different classes of switched systems. For general switched linear systems and switched nonlinear systems comprising unstable subsystems, it introduces novel ideas such as invariant subspace theory and the time-scheduled Lyapunov function method of designing switching signals to stabilize the underlying systems. For some typical switched nonlinear systems affected by various complex dynamics, the book proposes novel design approaches based on inte...

  14. Deformation and recrystallization mechanisms in actively extruding salt fountain: Microstructural evidence for a switch in deformation mechanisms with increased availability of meteoric water and decreased grain size (Qum Kuh, central Iran)

    Czech Academy of Sciences Publication Activity Database

    Desbois, G.; Závada, Prokop; Schléder, Z.; Urai, J. L.

    2010-01-01

    Roč. 32, č. 4 (2010), s. 580-594 ISSN 0191-8141 Grant - others:Deutsche Forschungsgemeinschaft(DE) UR 64/9-2 Institutional research plan: CEZ:AV0Z30120515 Keywords : rocksalt * salt extrusion * gamma - irradiation * deformation mechanisms * microstructure Subject RIV: DB - Geology ; Mineralogy Impact factor: 1.911, year: 2010

  15. FAS: Using FPGA to Accelerate and Secure SDN Software Switches

    Directory of Open Access Journals (Sweden)

    Wenwen Fu

    2018-01-01

    Full Text Available Software-Defined Networking (SDN promises the vision of more flexible and manageable networks but requires certain level of programmability in the data plane to accommodate different forwarding abstractions. SDN software switches running on commodity multicore platforms are programmable and are with low deployment cost. However, the performance of SDN software switches is not satisfactory due to the complex forwarding operations on packets. Moreover, this may hinder the performance of real-time security on software switch. In this paper, we analyze the forwarding procedure and identify the performance bottleneck of SDN software switches. An FPGA-based mechanism for accelerating and securing SDN switches, named FAS (FPGA-Accelerated SDN software switch, is proposed to take advantage of the reconfigurability and high-performance advantages of FPGA. FAS improves the performance as well as the capacity against malicious traffic attacks of SDN software switches by offloading some functional modules. We validate FAS on an FPGA-based network processing platform. Experiment results demonstrate that the forwarding rate of FAS can be 44% higher than the original SDN software switch. In addition, FAS provides new opportunity to enhance the security of SDN software switches by allowing the deployment of bump-in-the-wire security modules (such as packet detectors and filters in FPGA.

  16. Synchronization Between Two Different Switched Chaotic Systems By Switching Control

    Directory of Open Access Journals (Sweden)

    Du Li Ming

    2016-01-01

    Full Text Available This paper is concerned with the synchronization problem of two different switched chaotic systems, considering the general case that the master-slave switched chaotic systems have uncertainties. Two basic problems are considered: one is projective synchronization of switched chaotic systems under arbitrary switching; the other is projective synchronization of switched chaotic systems by design of switching when synchronization cannot achieved by using any subsystems alone. For the two problems, common Lyapunov function method and multiple Lyapunov function method are used respectively, an adaptive control scheme has been presented, some sufficient synchronization conditions are attainted, and the switching signal is designed. Finally, the numerical simulation is provide to show the effectiveness of our method.

  17. Rotation Impact of Reed Switch

    International Nuclear Information System (INIS)

    Park, Yun Bum; Lee, Jae Seon; Kim, Jong Wook; Han, Eun Sil; Park, Hee June

    2016-01-01

    A CRDM (Control Rod Drive Mechanism) is an electromagnetic device which drives a control rod assembly linearly to regulate the reactivity of a nuclear core. A RPIS (Rod Position Indication System) is used as a position indicator of a control rod assembly for a CRDM of a nuclear reactor, SMART. A highly accurate RPIS for SMART is required because the reactivity of a nuclear core for a small modular reactor is more sensitive than the commercial ones. In this study, the effect of positioning direction of the reeds in a reed switch for the CRDM RPIS has been studied using the electromagnetic FE analysis. It is found that the positioning direction of the reeds slightly but not significantly affects the formation of attraction. Analysis results will be used as the basis on estimated accuracy of full RPIS system.

  18. Rotation Impact of Reed Switch

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yun Bum; Lee, Jae Seon; Kim, Jong Wook [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Han, Eun Sil [Taesung S and E, Seoul (Korea, Republic of); Park, Hee June [Woojin Inc., Hwaseong (Korea, Republic of)

    2016-10-15

    A CRDM (Control Rod Drive Mechanism) is an electromagnetic device which drives a control rod assembly linearly to regulate the reactivity of a nuclear core. A RPIS (Rod Position Indication System) is used as a position indicator of a control rod assembly for a CRDM of a nuclear reactor, SMART. A highly accurate RPIS for SMART is required because the reactivity of a nuclear core for a small modular reactor is more sensitive than the commercial ones. In this study, the effect of positioning direction of the reeds in a reed switch for the CRDM RPIS has been studied using the electromagnetic FE analysis. It is found that the positioning direction of the reeds slightly but not significantly affects the formation of attraction. Analysis results will be used as the basis on estimated accuracy of full RPIS system.

  19. Laser activated superconducting switch

    International Nuclear Information System (INIS)

    Wolf, A.A.

    1976-01-01

    A superconducting switch or bistable device is described consisting of a superconductor in a cryogen maintaining a temperature just below the transition temperature, having a window of the proper optical frequency band for passing a laser beam which may impinge on the superconductor when desired. The frequency of the laser is equal to or greater than the optical absorption frequency of the superconducting material and is consistent with the ratio of the gap energy of the switch material to Planck's constant, to cause depairing of electrons, and thereby normalize the superconductor. Some embodiments comprise first and second superconducting metals. Other embodiments feature the two superconducting metals separated by a thin film insulator through which the superconducting electrons tunnel during superconductivity

  20. Coulomb Blockade Plasmonic Switch.

    Science.gov (United States)

    Xiang, Dao; Wu, Jian; Gordon, Reuven

    2017-04-12

    Tunnel resistance can be modulated with bias via the Coulomb blockade effect, which gives a highly nonlinear response current. Here we investigate the optical response of a metal-insulator-nanoparticle-insulator-metal structure and show switching of a plasmonic gap from insulator to conductor via Coulomb blockade. By introducing a sufficiently large charging energy in the tunnelling gap, the Coulomb blockade allows for a conductor (tunneling) to insulator (capacitor) transition. The tunnelling electrons can be delocalized over the nanocapacitor again when a high energy penalty is added with bias. We demonstrate that this has a huge impact on the plasmonic resonance of a 0.51 nm tunneling gap with ∼70% change in normalized optical loss. Because this structure has a tiny capacitance, there is potential to harness the effect for high-speed switching.

  1. Cryogenic switched MOSFET characterization

    Science.gov (United States)

    1981-01-01

    Both p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.

  2. Practical switching power supply design

    CERN Document Server

    Brown, Martin C

    1990-01-01

    Take the ""black magic"" out of switching power supplies with Practical Switching Power Supply Design! This is a comprehensive ""hands-on"" guide to the theory behind, and design of, PWM and resonant switching supplies. You'll find information on switching supply operation and selecting an appropriate topology for your application. There's extensive coverage of buck, boost, flyback, push-pull, half bridge, and full bridge regulator circuits. Special attention is given to semiconductors used in switching supplies. RFI/EMI reduction, grounding, testing, and safety standards are also deta

  3. Composite Material Switches

    Science.gov (United States)

    Javadi, Hamid (Inventor)

    2002-01-01

    A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

  4. MCT/MOSFET Switch

    Science.gov (United States)

    Rippel, Wally E.

    1990-01-01

    Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

  5. Python Switch Statement

    Directory of Open Access Journals (Sweden)

    2008-06-01

    Full Text Available The Python programming language does not have a built in switch/case control structure as found in many other high level programming languages. It is thought by some that this is a deficiency in the language, and the control structure should be added. This paper demonstrates that not only is the control structure not needed, but that the methods available in Python are more expressive than built in case statements in other high level languages.

  6. Gas adsorption/absorption heat switch, phase 1

    Science.gov (United States)

    Chan, C. K.

    1987-01-01

    The service life and/or reliability of far-infrared sensors on surveillance satellites is presently limited by the cryocooler. The life and/or reliability, however, can be extended by using redundant cryocoolers. To reduce parasitic heat leak, each stage of the inactive redundant cryocooler must be thermally isolated from the optical system, while each stage of the active cryocooler must be thermally connected to the system. The thermal break or the thermal contact can be controlled by heat switches. Among different physical mechanisms for heat switching, mechanically activated heat switches tend to have low reliability and, furthermore, require a large contact force. Magnetoresistive heat switches are, except at very low temperatures, of very low efficiency. Heat switches operated by the heat pipe principle usually require a long response time. A sealed gas gap heat switch operated by an adsorption pump has no mechanical motion and should provide the reliability and long lifetime required in long-term space missions. Another potential application of a heat switch is the thermal isolation of the optical plane during decontamination.

  7. New fast switches for the Tore Supra ohmic heating circuit

    International Nuclear Information System (INIS)

    Zunino, K.; Bruneth, J.; Cara, P.; Louart, A.; Santagiustina, A.; Emelyanova, I.; Filippov, F.; Mikailov, N.

    2003-01-01

    The Tore-Supra ohmic heating circuit is equipped with four fast make switches and one fast opening switch. After many years of operation, it became necessary to substitute this equipment by modern components with similar ratings. An extensive research has been undertaken to find fast switches able to withstand more than 2500 operations per year without maintenance, at a make current of 54 kA, a voltage of 12 kV and with a closing time of less than 15 ms. At the end of the investigation, it was decided to replace the old components by fast mechanical switches proposed by the Efremov Institute and based on a prototype developed for ITER. This paper presents the technical requirements and the characteristics of the switches and describes the operational experience gained with these components during operating campaigns of 2002 and 2003. (authors)

  8. A simple self-breaking 2 MV gas switch

    Energy Technology Data Exchange (ETDEWEB)

    Di Capua, M.S.; Freytag, E.K.; Dixon, W.R.; Hawley, R.A.

    1987-06-29

    We describe a simple self-breaking 2 MV gas master switch for the LLNL 2 MV general purpose relativistic electron beam (REB) accelerator. The switch cavity has been hollowed out in a 17.8 cm-thick acrylic slab. The switch gap is 3.55 cm. At 2 MV the maximum field at the cathode is 740 kV cm/sup -1/ and the maximum envelope field is 172 kV cm/sup -1/. The maximum measured switching voltage is 1.90 +- 0.1 MV (10 bar abs). The minimum switching voltage is 1.1 MV (4.3 bar abs). The operating characteristics break away from the 89 kV/(cm atm) dc breakdown strength of SF/sub 6/ at 5 bar abs. Careful electrical and mechanical design as well as strict quality control during assembly and operation have resulted in reliable and reproducible operation.

  9. An absorptive single-pole four-throw switch using multiple-contact MEMS switches and its application to a monolithic millimeter-wave beam-forming network

    International Nuclear Information System (INIS)

    Lee, Sanghyo; Kim, Jong-Man; Kim, Yong-Kweon; Kwon, Youngwoo

    2009-01-01

    In this paper, a new absorptive single-pole four-throw (SP4T) switch based on multiple-contact switching is proposed and integrated with a Butler matrix to demonstrate a monolithic beam-forming network at millimeter waves (mm waves). In order to simplify the switching driving circuit and reduce the number of unit switches in an absorptive SP4T switch, the individual switches were replaced with long-span multiple-contact switches using stress-free single-crystalline-silicon MEMS technology. This approach improves the mechanical stability as well as the manufacturing yield, thereby allowing successful integration into a monolithic beam former. The fabricated absorptive SP4T MEMS switch shows insertion loss less than 1.3 dB, return losses better than 11 dB at 30 GHz and wideband isolation performance higher than 39 dB from 20 to 40 GHz. The absorptive SP4T MEMS switch is integrated with a 4 × 4 Butler matrix on a single chip to implement a monolithic beam-forming network, directing beam into four distinct angles. Array factors from the measured data show that the proposed absorptive SPnT MEMS switch can be effectively used for high-performance mm-wave beam-switching systems. This work corresponds to the first demonstration of a monolithic beam-forming network using switched beams

  10. Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors

    International Nuclear Information System (INIS)

    Yurkov, S N; Mnatsakanov, T T; Levinshtein, M E; Cheng, L; Palmour, J W

    2014-01-01

    The specific features of the temperature and bias dependences of the switch-on gate current in SiC thyristors are examined analytically for two possible switching mechanisms. The so-called γ-mechanism, which is highly typical of the conventional Si thyristors, is characterized by very weak temperature and bias dependences. By contrast, the so-called α-mechanism, which is very characteristic of SiC thyristors, is highly sensitive to changes in temperature and bias. If the thyristor is switched on by the α-mechanism, the switch-on gate current density decreases very steeply with increasing temperature. As a result, the thyristor can lose its working capacity at elevated temperatures due to the instability against even very weak impacts. With decreasing the bias voltage U a , the gate switch-on current increases very steeply, which can make switching the thyristor on difficult. The unintentional shunting, which is apparently present in high-voltage SiC thyristors, causes the transition from the α- to the γ-mechanism at elevated temperatures and high biases. It can be supposed that introduction of a controllable technological shunting of the emitter–thin base junction allows stabilization of the temperature and bias parameters of SiC thyristors. The analytical results are confirmed by computer simulations performed in wide temperature and bias ranges for a 4H-SiC thyristor of the 18 kV class. (paper)

  11. Mechanics

    CERN Document Server

    Hartog, J P Den

    1961-01-01

    First published over 40 years ago, this work has achieved the status of a classic among introductory texts on mechanics. Den Hartog is known for his lively, discursive and often witty presentations of all the fundamental material of both statics and dynamics (and considerable more advanced material) in new, original ways that provide students with insights into mechanical relationships that other books do not always succeed in conveying. On the other hand, the work is so replete with engineering applications and actual design problems that it is as valuable as a reference to the practicing e

  12. Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

    Directory of Open Access Journals (Sweden)

    Deepak Bansal

    2016-01-01

    Full Text Available RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

  13. Helical EMG module with explosive current opening switches

    International Nuclear Information System (INIS)

    Chernyshev, V.K.; Vakhrushev, V.V.; Volkov, G.I.; Ivanov, V.A.; Fetisov, I.K.

    1990-01-01

    To carry out the experimental work to study plasma properties, electromagnetic sources with 10 6 to 10 8 J of stored energy delivered to the load in microsecond time, are required. Among the current electromagnetic storage devices, the explosive magnetic generators (EMG) are of the largest energy capacity. The disadvantages of this type of generators is relatively long time (ten of microseconds) of electromagnetic energy cumulation in the deformable circuit. To reduce the time of energy transfer to the load to a microsecond range the switching scheme is generally used, where the cumulation circuit and that of the load are separated and connected in parallel via a switching element (opening switch) providing generation of desired power. In this paper, some ways and means of designing opening switches to generate high current pulses have been investigated. The opening switches to generate high current pulses have been investigated. The opening switches which operation is based on mechanic destruction of the conductor using high explosive, have the highest and most reliable performance. The authors have explored the mechanic disruption of a thin conductor (foil), the technique based on throwing the foil at the ribbed barrier of electric insulator material. The report presents the data obtained in studying the operation of this type of opening switch having cylindrical shape, 200 mm in diameter and 200 mm long, designed for generation of 5.5 MA current pulse in the load

  14. Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities

    Science.gov (United States)

    Li, Shuo; Wei, Xianhua; Lei, Yao; Yuan, Xincai; Zeng, Huizhong

    2016-12-01

    Resistive switching behaviors have been investigated in the Au/BaTiO3/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO3 thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I-V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO3 and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  15. Magnetic switch for reactor control rod

    International Nuclear Information System (INIS)

    Germer, J.H.

    1986-01-01

    This patent describes a control rod system for a nuclear reactor utilizing an electromagnetic grapple mechanism for holding and releasing a control rod, the improvement comprising a magnetic reed switch assembly having a Curie-point magnetic shunt and responsive to reactor coolant temperature for short circuiting the electromagnetic grapple mechanism causing release of the control rod when the coolant temperature reaches the Curie-point of the magnetic shunt. The magnetic reed switch assembly includes a: a permanent magnet, a pair of magnetic pole pieces located at and in contact with opposite ends of the permanent magnet, the Curie-point magnetic shunt being positioned adjacent the permanent magnet and in contact with the pair of magnetic pole pieces, and a reed switch positioned intermediate the pole pieces and provided with a pair of ferromagnetic reeds, a nonmagnetic enclosure around the reeds, a first of the reeds being secured at one end to a first of the pair of pole pieces, a second of the reeds having one end extending into and secured to a hollow member positioned in and extending through a second of the pair of pole pieces, the one end of the second of the reeds secured to a condector adapted to be connected to the electromagnetic grapple mechanism

  16. Immunoglobulin class-switch recombination deficiencies.

    Science.gov (United States)

    Durandy, Anne; Kracker, Sven

    2012-07-30

    Immunoglobulin class-switch recombination deficiencies (Ig-CSR-Ds) are rare primary immunodeficiencies characterized by defective switched isotype (IgG/IgA/IgE) production. Depending on the molecular defect in question, the Ig-CSR-D may be combined with an impairment in somatic hypermutation (SHM). Some of the mechanisms underlying Ig-CSR and SHM have been described by studying natural mutants in humans. This approach has revealed that T cell-B cell interaction (resulting in CD40-mediated signaling), intrinsic B-cell mechanisms (activation-induced cytidine deaminase-induced DNA damage), and complex DNA repair machineries (including uracil-N-glycosylase and mismatch repair pathways) are all involved in class-switch recombination and SHM. However, several of the mechanisms required for full antibody maturation have yet to be defined. Elucidation of the molecular defects underlying the diverse set of Ig-CSR-Ds is essential for understanding Ig diversification and has prompted better definition of the clinical spectrum of diseases and the development of increasingly accurate diagnostic and therapeutic approaches.

  17. Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

    Directory of Open Access Journals (Sweden)

    Shuhan Jing

    2015-04-01

    Full Text Available The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

  18. Chemical switches and logic gates based on surface modified semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Konrad, Szacilowski; Wojciech, Macyk [Jagiellonian Univ., Dept. of Chemistry, Krakow (Poland)

    2006-02-15

    Photoelectrochemical properties of multicomponent photo-electrodes based on titanium dioxide and cadmium sulfide powders modified with hexacyanoferrate complexes have been examined. Photocurrent responses were recorded as functions of applied potential and photon energy. Surprisingly, the photocurrent can be switched between positive and negative values as a result of potential or photon energy changes. This new effect called Photo Electrochemical Photocurrent Switching (PEPS) opens a possibility of new chemical switches and logic gates construction. Boolean logic analysis and a tentative mechanism of the device are discussed. (authors)

  19. MENGAPA PERUSAHAAN MELAKUKAN AUDITOR SWITCH?

    Directory of Open Access Journals (Sweden)

    Kadek Sumadi

    2011-01-01

    Full Text Available The existence of a large number of accounting firms allowsprovides companies choices whether to stay with current firm or switchto another accounting firm. Decision of Minister of FinanceNo.423/KMK.06/2002 states that a company must switch auditor afterfive years of consecutive assignment. This is mandatory. The questionrises when a company voluntarily switches its auditor. Why does thishappen?One of the reasons is that management does not satisfy withauditor opinion, except for unqualified opinion. New management teamwould directly or indirectly encourage auditor switch to align accountingand reporting policies. Moreover an expanding company expects positivereaction when it does auditor switch. Profitability is also one reason fora company to switch auditor, for example, when a company earns moreprofit it tends to hire more credible auditor. On the other hand, when thecompany faces a financial distress, it probably would switch auditor aswell.

  20. Reversible electrical resistance switching in GeSbTe thin films : An electrolytic approach without amorphous-crystalline phase-change

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George; De Hosson, Jeff Th. M.; Wouters, DJ; Hong, S; Soss, S; Auciello, O

    2008-01-01

    Besides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named 'polarity-dependent resistance (PDR) switching'. 'Me electrical resistance of the film switches between a low- and high-state

  1. Low-Crosstalk Composite Optical Crosspoint Switches

    Science.gov (United States)

    Pan, Jing-Jong; Liang, Frank

    1993-01-01

    Composite optical switch includes two elementary optical switches in tandem, plus optical absorbers. Like elementary optical switches, composite optical switches assembled into switch matrix. Performance enhanced by increasing number of elementary switches. Advantage of concept: crosstalk reduced to acceptably low level at moderate cost of doubling number of elementary switches rather than at greater cost of tightening manufacturing tolerances and exerting more-precise control over operating conditions.

  2. Compound semiconductor optical waveguide switch

    Science.gov (United States)

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  3. Neuromorphic atomic switch networks.

    Directory of Open Access Journals (Sweden)

    Audrius V Avizienis

    Full Text Available Efforts to emulate the formidable information processing capabilities of the brain through neuromorphic engineering have been bolstered by recent progress in the fabrication of nonlinear, nanoscale circuit elements that exhibit synapse-like operational characteristics. However, conventional fabrication techniques are unable to efficiently generate structures with the highly complex interconnectivity found in biological neuronal networks. Here we demonstrate the physical realization of a self-assembled neuromorphic device which implements basic concepts of systems neuroscience through a hardware-based platform comprised of over a billion interconnected atomic-switch inorganic synapses embedded in a complex network of silver nanowires. Observations of network activation and passive harmonic generation demonstrate a collective response to input stimulus in agreement with recent theoretical predictions. Further, emergent behaviors unique to the complex network of atomic switches and akin to brain function are observed, namely spatially distributed memory, recurrent dynamics and the activation of feedforward subnetworks. These devices display the functional characteristics required for implementing unconventional, biologically and neurally inspired computational methodologies in a synthetic experimental system.

  4. Recent developments in switching theory

    CERN Document Server

    Mukhopadhyay, Amar

    2013-01-01

    Electrical Science Series: Recent Developments in Switching Theory covers the progress in the study of the switching theory. The book discusses the simplified proof of Post's theorem on completeness of logic primitives; the role of feedback in combinational switching circuits; and the systematic procedure for the design of Lupanov decoding networks. The text also describes the classical results on counting theorems and their application to the classification of switching functions under different notions of equivalence, including linear and affine equivalences. The development of abstract har

  5. Repetitive plasma opening switch for powerful high-voltage pulse generators

    International Nuclear Information System (INIS)

    Dolgachev, G.I.; Zakatov, L.P.; Nitishinskii, M.S.; Ushakov, A.G.

    1998-01-01

    Results are presented of experimental studies of plasma opening switches that serve to sharpen the pulses of inductive microsecond high-voltage pulse generators. It is demonstrated that repetitive plasma opening switches can be used to create super-powerful generators operating in a quasi-continuous regime. An erosion switching mechanism and the problem of magnetic insulation in repetitive switches are considered. Achieving super-high peak power in plasma switches makes it possible to develop new types of high-power generators of electron beams and X radiation. Possible implementations and the efficiency of these generators are discussed

  6. Nanoelectromechanical switch operating by tunneling of an entire C-60 molecule

    DEFF Research Database (Denmark)

    Danilov, Andrey V.; Hedegård, Per; Golubev, Dimitrii S.

    2008-01-01

    (i) the relative contribution of tunneling, current induced heating and thermal fluctuations to the switching mechanism, (ii) the voltage dependent energy barrier (similar to 100-200 meV) separating the two states of the switch and (iii) the switching attempt frequency, omega(0) corresponding to a 2......We present a solid state single molecule electronic device where switching between two states with different conductance happens predominantly by tunneling of an entire C-60 molecule. This conclusion is based on a novel statistical analysis of similar to 10(5) switching events. The analysis yields...

  7. Flexible circuits with integrated switches for robotic shape sensing

    Science.gov (United States)

    Harnett, C. K.

    2016-05-01

    Digital switches are commonly used for detecting surface contact and limb-position limits in robotics. The typical momentary-contact digital switch is a mechanical device made from metal springs, designed to connect with a rigid printed circuit board (PCB). However, flexible printed circuits are taking over from the rigid PCB in robotics because the circuits can bend while carrying signals and power through moving joints. This project is motivated by a previous work where an array of surface-mount momentary contact switches on a flexible circuit acted as an all-digital shape sensor compatible with the power resources of energy harvesting systems. Without a rigid segment, the smallest commercially-available surface-mount switches would detach from the flexible circuit after several bending cycles, sometimes violently. This report describes a low-cost, conductive fiber based method to integrate electromechanical switches into flexible circuits and other soft, bendable materials. Because the switches are digital (on/off), they differ from commercially-available continuous-valued bend/flex sensors. No amplification or analog-to-digital conversion is needed to read the signal, but the tradeoff is that the digital switches only give a threshold curvature value. Boundary conditions on the edges of the flexible circuit are key to setting the threshold curvature value for switching. This presentation will discuss threshold-setting, size scaling of the design, automation for inserting a digital switch into the flexible circuit fabrication process, and methods for reconstructing a shape from an array of digital switch states.

  8. A novel multi-actuation CMOS RF MEMS switch

    Science.gov (United States)

    Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

    2008-12-01

    This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

  9. Operation of a homeostatic sleep switch.

    Science.gov (United States)

    Pimentel, Diogo; Donlea, Jeffrey M; Talbot, Clifford B; Song, Seoho M; Thurston, Alexander J F; Miesenböck, Gero

    2016-08-18

    Sleep disconnects animals from the external world, at considerable risks and costs that must be offset by a vital benefit. Insight into this mysterious benefit will come from understanding sleep homeostasis: to monitor sleep need, an internal bookkeeper must track physiological changes that are linked to the core function of sleep. In Drosophila, a crucial component of the machinery for sleep homeostasis is a cluster of neurons innervating the dorsal fan-shaped body (dFB) of the central complex. Artificial activation of these cells induces sleep, whereas reductions in excitability cause insomnia. dFB neurons in sleep-deprived flies tend to be electrically active, with high input resistances and long membrane time constants, while neurons in rested flies tend to be electrically silent. Correlative evidence thus supports the simple view that homeostatic sleep control works by switching sleep-promoting neurons between active and quiescent states. Here we demonstrate state switching by dFB neurons, identify dopamine as a neuromodulator that operates the switch, and delineate the switching mechanism. Arousing dopamine caused transient hyperpolarization of dFB neurons within tens of milliseconds and lasting excitability suppression within minutes. Both effects were transduced by Dop1R2 receptors and mediated by potassium conductances. The switch to electrical silence involved the downregulation of voltage-gated A-type currents carried by Shaker and Shab, and the upregulation of voltage-independent leak currents through a two-pore-domain potassium channel that we term Sandman. Sandman is encoded by the CG8713 gene and translocates to the plasma membrane in response to dopamine. dFB-restricted interference with the expression of Shaker or Sandman decreased or increased sleep, respectively, by slowing the repetitive discharge of dFB neurons in the ON state or blocking their entry into the OFF state. Biophysical changes in a small population of neurons are thus linked to the

  10. Hybrid switch for resonant power converters

    Science.gov (United States)

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  11. LCT protective dump-switch tests

    International Nuclear Information System (INIS)

    Parsons, W.M.

    1981-01-01

    Each of the six coils in the Large Coil Task (LCT) has a separate power supply, dump resistor, and switching circuit. Each switching circuit contains five switches, two of which are redundant. The three remaining switches perform separate duties in an emergency dump situation. These three switches were tested to determine their ability to meet the LCT conditions

  12. Circuit switched optical networks

    DEFF Research Database (Denmark)

    Kloch, Allan

    2003-01-01

    Some of the most important components required for enabling optical networking are investigated through both experiments and modelling. These all-optical components are the wavelength converter, the regenerator and the space switch. When these devices become "off-the-shelf" products, optical cross......, it is expected that the optical solution will offer an economical benefit for hight bit rate networks. This thesis begins with a discussion of the expected impact on communications systems from the rapidly growing IP traffic, which is expected to become the dominant source for traffic. IP traffic has some...... characteristics, which are best supported by an optical network. The interest for such an optical network is exemplified by the formation of the ACTS OPEN project which aim was to investigate the feasibility of an optical network covering Europe. Part of the work presented in this thesis is carried out within...

  13. Photo-switching element

    Energy Technology Data Exchange (ETDEWEB)

    Masaki, Yuichi

    1987-10-31

    Photo-input MOS transistor (Photo-switching element) cannot give enough ON/OFF ratio but requires an auxiliary condenser for a certain type of application. In addition, PN junction of amorphous silicon is not practical because it gives high leak current resulting in low electromotive force. In this invention, a solar cell was constructed with a lower electrode consisting of a transparent electro-conducting film, a photosensitive part consisting of an amorphous Si layer of p-i-n layer construction, and an upper metal electrode consisting of Cr or Nichrome, and a thin film transistor was placed on the solar cell, and further the upper metal electrode was co-used as a gate electrode of the thin film transistor; this set-up of this invention enabled to attain an efficient photo-electric conversion of the incident light, high electromotive force of the solar cell, and the transistor with high ON/OFF ratio. (3 figs)

  14. Battery switch for downhole tools

    Science.gov (United States)

    Boling, Brian E.

    2010-02-23

    An electrical circuit for a downhole tool may include a battery, a load electrically connected to the battery, and at least one switch electrically connected in series with the battery and to the load. The at least one switch may be configured to close when a tool temperature exceeds a selected temperature.

  15. Improved switch-resistor packaging

    Science.gov (United States)

    Redmerski, R. E.

    1980-01-01

    Packaging approach makes resistors more accessible and easily identified with specific switches. Failures are repaired more quickly because of improved accessibility. Typical board includes one resistor that acts as circuit breaker, and others are positioned so that their values can be easily measured when switch is operated. Approach saves weight by using less wire and saves valuable panel space.

  16. Ferroelastic domain switching in tetragonal zirconia

    International Nuclear Information System (INIS)

    Chan, C.J.; Ruhle, M.; Jue, J.F.; Virkar, A.V.

    1991-01-01

    Ferroelastic domain switching is one of the possible toughening mechanisms in ceramic materials. Microstructural evidence of domain reorientation (switching) in polydomain tetragonal zirconia single crystals is observed upon the application of a unidirectional compressive stress. Dark field imaging of the three (112) tetragonal twin variants in a [111] zone indicates that two sets of twin variants grow at the expense of the third set upon application of uniaxial compression. The diminishing variant is the one with its c axis parallel to the compression axis. Indentation experiments on uniaxially compressed samples show an anisotropy in crack length. Crack propogates more easily along the loading direction. In this paper construction for the orientation relationship of domains and their twin boundaries is presented

  17. Filamentary model in resistive switching materials

    Science.gov (United States)

    Jasmin, Alladin C.

    2017-12-01

    The need for next generation computer devices is increasing as the demand for efficient data processing increases. The amount of data generated every second also increases which requires large data storage devices. Oxide-based memory devices are being studied to explore new research frontiers thanks to modern advances in nanofabrication. Various oxide materials are studied as active layers for non-volatile memory. This technology has potential application in resistive random-access-memory (ReRAM) and can be easily integrated in CMOS technologies. The long term perspective of this research field is to develop devices which mimic how the brain processes information. To realize such application, a thorough understanding of the charge transport and switching mechanism is important. A new perspective in the multistate resistive switching based on current-induced filament dynamics will be discussed. A simple equivalent circuit of the device gives quantitative information about the nature of the conducting filament at different resistance states.

  18. Mechanics

    CERN Document Server

    Chester, W

    1979-01-01

    When I began to write this book, I originally had in mind the needs of university students in their first year. May aim was to keep the mathematics simple. No advanced techniques are used and there are no complicated applications. The emphasis is on an understanding of the basic ideas and problems which require expertise but do not contribute to this understanding are not discussed. How­ ever, the presentation is more sophisticated than might be considered appropri­ ate for someone with no previous knowledge of the subject so that, although it is developed from the beginning, some previous acquaintance with the elements of the subject would be an advantage. In addition, some familiarity with element­ ary calculus is assumed but not with the elementary theory of differential equations, although knowledge of the latter would again be an advantage. It is my opinion that mechanics is best introduced through the motion of a particle, with rigid body problems left until the subject is more fully developed. Howev...

  19. The neural basis of task switching changes with skill acquisition

    Directory of Open Access Journals (Sweden)

    Koji eJimura

    2014-05-01

    Full Text Available Learning novel skills involves reorganization and optimization of cognitive processing involving a broad network of brain regions. Previous work has shown asymmetric costs of switching to a well-trained task versus a poorly-trained task, but the neural basis of these differential switch costs is unclear. The current study examined the neural signature of task switching in the context of acquisition of new skill. Human participants alternated randomly between a novel visual task (mirror-reversed word reading and a highly practiced one (plain word reading, allowing the isolation of task switching and skill set maintenance. Two scan sessions were separated by two weeks, with behavioral training on the mirror reading task in between the two sessions. Broad cortical regions, including bilateral prefrontal, parietal, and extrastriate cortices, showed decreased activity associated with learning of the mirror reading skill. In contrast, learning to switch to the novel skill was associated with decreased activity in a focal subcortical region in the dorsal striatum. Switching to the highly practiced task was associated with a non-overlapping set of regions, suggesting substantial differences in the neural substrates of switching as a function of task skill. Searchlight multivariate pattern analysis also revealed that learning was associated with decreased pattern information for mirror versus plain reading tasks in fronto-parietal regions. Inferior frontal junction and posterior parietal cortex showed a joint effect of univariate activation and pattern information. These results suggest distinct learning mechanisms task performance and executive control as a function of learning.

  20. Modeling Populations of Thermostatic Loads with Switching Rate Actuation

    DEFF Research Database (Denmark)

    Totu, Luminita Cristiana; Wisniewski, Rafal; Leth, John-Josef

    2015-01-01

    We model thermostatic devices using a stochastic hybrid description, and introduce an external actuation mechanism that creates random switch events in the discrete dynamics. We then conjecture the form of the Fokker-Planck equation and successfully verify it numerically using Monte Carlo...... simulations. The actuation mechanism and subsequent modeling result are relevant for power system operation....

  1. Uncertainty quantification in capacitive RF MEMS switches

    Science.gov (United States)

    Pax, Benjamin J.

    Development of radio frequency micro electrical-mechanical systems (RF MEMS) has led to novel approaches to implement electrical circuitry. The introduction of capacitive MEMS switches, in particular, has shown promise in low-loss, low-power devices. However, the promise of MEMS switches has not yet been completely realized. RF-MEMS switches are known to fail after only a few months of operation, and nominally similar designs show wide variability in lifetime. Modeling switch operation using nominal or as-designed parameters cannot predict the statistical spread in the number of cycles to failure, and probabilistic methods are necessary. A Bayesian framework for calibration, validation and prediction offers an integrated approach to quantifying the uncertainty in predictions of MEMS switch performance. The objective of this thesis is to use the Bayesian framework to predict the creep-related deflection of the PRISM RF-MEMS switch over several thousand hours of operation. The PRISM switch used in this thesis is the focus of research at Purdue's PRISM center, and is a capacitive contacting RF-MEMS switch. It employs a fixed-fixed nickel membrane which is electrostatically actuated by applying voltage between the membrane and a pull-down electrode. Creep plays a central role in the reliability of this switch. The focus of this thesis is on the creep model, which is calibrated against experimental data measured for a frog-leg varactor fabricated and characterized at Purdue University. Creep plasticity is modeled using plate element theory with electrostatic forces being generated using either parallel plate approximations where appropriate, or solving for the full 3D potential field. For the latter, structure-electrostatics interaction is determined through immersed boundary method. A probabilistic framework using generalized polynomial chaos (gPC) is used to create surrogate models to mitigate the costly full physics simulations, and Bayesian calibration and forward

  2. Superconductivity, energy storage and switching

    International Nuclear Information System (INIS)

    Laquer, H.L.

    1974-01-01

    The phenomenon of superconductivity can contribute to the technology of energy storage and switching in two distinct ways. On one hand the zero resistivity of the superconductor can produce essentially infinite time constants so that an inductive storage system can be charged from very low power sources. On the other hand, the recovery of finite resistivity in a normal-going superconducting switch can take place in extremely short times, so that a system can be made to deliver energy at a very high power level. Topics reviewed include: physics of superconductivity, limits to switching speed of superconductors, physical and engineering properties of superconducting materials and assemblies, switching methods, load impedance considerations, refrigeration economics, limitations imposed by present day and near term technology, performance of existing and planned energy storage systems, and a comparison with some alternative methods of storing and switching energy. (U.S.)

  3. Amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.; Smith, Casey; Hussain, Muhammad Mustafa

    2013-01-01

    Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

  4. Amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-04-01

    Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

  5. Switching Phenomena in a System with No Switches

    Science.gov (United States)

    Preis, Tobias; Stanley, H. Eugene

    2010-02-01

    It is widely believed that switching phenomena require switches, but this is actually not true. For an intriguing variety of switching phenomena in nature, the underlying complex system abruptly changes from one state to another in a highly discontinuous fashion. For example, financial market fluctuations are characterized by many abrupt switchings creating increasing trends ("bubble formation") and decreasing trends ("financial collapse"). Such switching occurs on time scales ranging from macroscopic bubbles persisting for hundreds of days to microscopic bubbles persisting only for a few seconds. We analyze a database containing 13,991,275 German DAX Future transactions recorded with a time resolution of 10 msec. For comparison, a database providing 2,592,531 of all S&P500 daily closing prices is used. We ask whether these ubiquitous switching phenomena have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the volatility after each switching occurs. We interpret our findings as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in transaction volume and time intervals between trades. We show that these financial market switching processes have properties similar to those of phase transitions. We suggest that the well-known catastrophic bubbles that occur on large time scales—such as the most recent financial crisis—are no outliers but single dramatic representatives caused by the switching between upward and downward trends on time scales varying over nine orders of magnitude from very large (≈102 days) down to very small (≈10 ms).

  6. Inflexible minds: impaired attention switching in recent-onset schizophrenia.

    Directory of Open Access Journals (Sweden)

    Henderikus G O M Smid

    Full Text Available Impairment of sustained attention is assumed to be a core cognitive abnormality in schizophrenia. However, this seems inconsistent with a recent hypothesis that in schizophrenia the implementation of selection (i.e., sustained attention is intact but the control of selection (i.e., switching the focus of attention is impaired. Mounting evidence supports this hypothesis, indicating that switching of attention is a bigger problem in schizophrenia than maintaining the focus of attention. To shed more light on this hypothesis, we tested whether schizophrenia patients are impaired relative to controls in sustaining attention, switching attention, or both. Fifteen patients with recent-onset schizophrenia and fifteen healthy volunteers, matched on age and intelligence, performed sustained attention and attention switching tasks, while performance and brain potential measures of selective attention were recorded. In the sustained attention task, patients did not differ from the controls on these measures. In the attention switching task, however, patients showed worse performance than the controls, and early selective attention related brain potentials were absent in the patients while clearly present in the controls. These findings support the hypothesis that schizophrenia is associated with an impairment of the mechanisms that control the direction of attention (attention switching, while the mechanisms that implement a direction of attention (sustained attention are intact.

  7. Quantifying the dynamics of coupled networks of switches and oscillators.

    Directory of Open Access Journals (Sweden)

    Matthew R Francis

    Full Text Available Complex network dynamics have been analyzed with models of systems of coupled switches or systems of coupled oscillators. However, many complex systems are composed of components with diverse dynamics whose interactions drive the system's evolution. We, therefore, introduce a new modeling framework that describes the dynamics of networks composed of both oscillators and switches. Both oscillator synchronization and switch stability are preserved in these heterogeneous, coupled networks. Furthermore, this model recapitulates the qualitative dynamics for the yeast cell cycle consistent with the hypothesized dynamics resulting from decomposition of the regulatory network into dynamic motifs. Introducing feedback into the cell-cycle network induces qualitative dynamics analogous to limitless replicative potential that is a hallmark of cancer. As a result, the proposed model of switch and oscillator coupling provides the ability to incorporate mechanisms that underlie the synchronized stimulus response ubiquitous in biochemical systems.

  8. Optically controlled redshift switching effects in hybrid fishscale metamaterials

    Directory of Open Access Journals (Sweden)

    Yu Wang

    2018-05-01

    Full Text Available We numerically demonstrate optically controlled THz response in a hybrid fishscale metamaterial with embedded photoconductive silicon at oblique incidence of TE wave. The oblique incidence allows excitation of Fano-type trapped mode resonance in a 2-fold rotational symmetric metamaterial. The hybrid fishscale metamaterial exhibits an optically controlled redshift switching effect in the THz range. The switching effect is dominated by the conductivity of the silicon instead of mechanically adjusting angles of incidence. The tuning frequency range is up to 0.3THz with a large modulation depth and high transmission in the “ON” state. The fishscale metamaterial-based switching has been experimentally verified by its microwave counterpart integrated by variable resistors. Our work provides an alternative route to realize tunable Fano-type response in metamaterials and is of importance to active manipulation, sensing and switching of THz waves in practical applications.

  9. Optically controlled redshift switching effects in hybrid fishscale metamaterials

    Science.gov (United States)

    Wang, Yu; Zhu, Jinwei; Zhang, Hao; Zhang, Wenxing; Dong, Guohua; Ye, Peng; Lv, Tingting; Zhu, Zheng; Li, Yuxiang; Guan, Chunying; Shi, Jinhui

    2018-05-01

    We numerically demonstrate optically controlled THz response in a hybrid fishscale metamaterial with embedded photoconductive silicon at oblique incidence of TE wave. The oblique incidence allows excitation of Fano-type trapped mode resonance in a 2-fold rotational symmetric metamaterial. The hybrid fishscale metamaterial exhibits an optically controlled redshift switching effect in the THz range. The switching effect is dominated by the conductivity of the silicon instead of mechanically adjusting angles of incidence. The tuning frequency range is up to 0.3THz with a large modulation depth and high transmission in the "ON" state. The fishscale metamaterial-based switching has been experimentally verified by its microwave counterpart integrated by variable resistors. Our work provides an alternative route to realize tunable Fano-type response in metamaterials and is of importance to active manipulation, sensing and switching of THz waves in practical applications.

  10. Second-chance signal transduction explains cooperative flagellar switching.

    Science.gov (United States)

    Zot, Henry G; Hasbun, Javier E; Minh, Nguyen Van

    2012-01-01

    The reversal of flagellar motion (switching) results from the interaction between a switch complex of the flagellar rotor and a torque-generating stationary unit, or stator (motor unit). To explain the steeply cooperative ligand-induced switching, present models propose allosteric interactions between subunits of the rotor, but do not address the possibility of a reaction that stimulates a bidirectional motor unit to reverse direction of torque. During flagellar motion, the binding of a ligand-bound switch complex at the dwell site could excite a motor unit. The probability that another switch complex of the rotor, moving according to steady-state rotation, will reach the same dwell site before that motor unit returns to ground state will be determined by the independent decay rate of the excited-state motor unit. Here, we derive an analytical expression for the energy coupling between a switch complex and a motor unit of the stator complex of a flagellum, and demonstrate that this model accounts for the cooperative switching response without the need for allosteric interactions. The analytical result can be reproduced by simulation when (1) the motion of the rotor delivers a subsequent ligand-bound switch to the excited motor unit, thereby providing the excited motor unit with a second chance to remain excited, and (2) the outputs from multiple independent motor units are constrained to a single all-or-none event. In this proposed model, a motor unit and switch complex represent the components of a mathematically defined signal transduction mechanism in which energy coupling is driven by steady-state and is regulated by stochastic ligand binding. Mathematical derivation of the model shows the analytical function to be a general form of the Hill equation (Hill AV (1910) The possible effects of the aggregation of the molecules of haemoglobin on its dissociation curves. J Physiol 40: iv-vii).

  11. DETERMINANT OF DOWNWARD AUDITOR SWITCHING

    Directory of Open Access Journals (Sweden)

    Totok Budisantoso

    2017-12-01

    Full Text Available Abstract: Determinant of Downward Auditor Switching. This study examines the factors that influence downward auditor switching in five ASEAN countries. Fixed effect logistic regression was used as analytical method. This study found that opinion shopping occurred in ASEAN, especially in distress companies. Companies with complex businesses will retain the Big Four auditors to reduce complexity and audit costs. Audit and public committees serve as guardians of auditor quality. On the other hand, shareholders failed to maintain audit quality. It indicates that there is entrenchment effect in auditor switching.

  12. Electrically switched ion exchange

    Energy Technology Data Exchange (ETDEWEB)

    Lilga, M.A. [Pacific Northwest National Lab., Richland, WA (United States); Schwartz, D.T.; Genders, D.

    1997-10-01

    A variety of waste types containing radioactive {sup 137}Cs are found throughout the DOE complex. These waste types include water in reactor cooling basins, radioactive high-level waste (HLW) in underground storage tanks, and groundwater. Safety and regulatory requirements and economics require the removal of radiocesium before these wastes can be permanently disposed of. Electrically Switched Ion Exchange (ESIX) is an approach for radioactive cesium separation that combines IX and electrochemistry to provide a selective, reversible, and economic separation method that also produces little or no secondary waste. In the ESIX process, an electroactive IX film is deposited electrochemically onto a high-surface area electrode, and ion uptake and elution are controlled directly by modulating the potential of the film. For cesium, the electroactive films under investigation are ferrocyanides, which are well known to have high selectivities for cesium in concentrated sodium solutions. When a cathode potential is applied to the film, Fe{sup +3} is reduced to the Fe{sup +2} state, and a cation must be intercalated into the film to maintain charge neutrality (i.e., Cs{sup +} is loaded). Conversely, if an anodic potential is applied, a cation must be released from the film (i.e., Cs{sup +} is unloaded). Therefore, to load the film with cesium, the film is simply reduced; to unload cesium, the film is oxidized.

  13. Dynamic state switching in nonlinear multiferroic cantilevers

    Science.gov (United States)

    Wang, Yi; Onuta, Tiberiu-Dan; Long, Christian J.; Lofland, Samuel E.; Takeuchi, Ichiro

    2013-03-01

    We demonstrate read-write-read-erase cyclical mechanical-memory properties of all-thin-film multiferroic heterostructured Pb(Zr0.52Ti0.48) O3 / Fe0.7Ga0.3 cantilevers when a high enough voltage around the resonant frequency of the device is applied on the Pb(Zr0.52Ti0.48) O3 piezo-film. The device state switching process occurs due to the presence of a hysteresis loop in the piezo-film frequency response, which comes from the nonlinear behavior of the cantilever. The reference frequency at which the strain-mediated Fe0.7Ga0.3 based multiferroic device switches can also be tuned by applying a DC magnetic field bias that contributes to the increase of the cantilever effective stiffness. The switching dynamics is mapped in the phase space of the device measured transfer function characteristic for such high piezo-film voltage excitation, providing additional information on the dynamical stability of the devices.

  14. Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch

    Science.gov (United States)

    Nessel, James; Miranda, Felix

    2013-01-01

    A new nonvolatile nanoionic switch is powered and controlled through wireless radio-frequency (RF) transmission. A thin layer of chalcogenide glass doped with a metal ion, such as silver, comprises the operational portion of the switch. For the switch to function, an oxidizable electrode is made positive (anode) with respect to an opposing electrode (cathode) when sufficient bias, typically on the order of a few tenths of a volt or more, is applied. This action causes the metal ions to flow toward the cathode through a coordinated hopping mechanism. At the cathode, a reduction reaction occurs to form a metal deposit. This metal deposit creates a conductive path that bridges the gap between electrodes to turn the switch on. Once this conductive path is formed, no further power is required to maintain it. To reverse this process, the metal deposit is made positive with respect to the original oxidizable electrode, causing the dissolution of the metal bridge thereby turning the switch off. Once the metal deposit has been completely dissolved, the process self-terminates. This switching process features the following attributes. It requires very little to change states (i.e., on and off). Furthermore, no power is required to maintain the states; hence, the state of the switch is nonvolatile. Because of these attributes the integration of a rectenna to provide the necessary power and control is unique to this embodiment. A rectenna, or rectifying antenna, generates DC power from an incident RF signal. The low voltages and power required for the nanoionic switch control are easily generated from this system and provide the switch with a novel capability to be operated and powered from an external wireless device. In one realization, an RF signal of a specific frequency can be used to set the switch into an off state, while another frequency can be used to set the switch to an on state. The wireless, miniaturized, and nomoving- part features of this switch make it

  15. Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

    Science.gov (United States)

    Kaul, Anupama B.; Khan, Paul; Jennings, Andrew T.; Greer, Julia R.; Megerian, Krikor G.; Allmen, Paul von

    2009-01-01

    We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

  16. High current vacuum closing switch

    International Nuclear Information System (INIS)

    Dolgachev, G.I.; Maslennikov, D.D.; Romanov, A.S.; Ushakov, A.G.

    2005-01-01

    The paper proposes a powerful pulsed closing vacuum switch for high current commutation consisting of series of the vacuum diodes with near 1 mm gaps having closing time determined by the gaps shortening with the near-electrode plasmas [ru

  17. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  18. Switching of chirality by light

    NARCIS (Netherlands)

    Feringa, B.L.; Schoevaars, A.M; Jager, W.F.; de Lange, B.; Huck, N.P.M.

    1996-01-01

    Optically active photoresponsive molecules are described by which control of chirality is achieved by light. These chiroptical molecular switches are based on inherently dissymmetric overcrowded alkenes and the synthesis, resolution and dynamic stereochemical properties are discussed. Introduction

  19. Aurora oil switch upgrade program

    International Nuclear Information System (INIS)

    Warren, T.

    1989-03-01

    This report describes the short pulse synchronization requirements, the original Aurora trigger scheme, and the PI/SNLA approach to improving the synchronization. It also describes the oil switching design study undertaken as the first phase of the program. A discussion of oil-switch closure analysis and the conceptual design motivated by this analysis are presented. This paper also describes the oil-switch trigger pulser tests required to validate the concept. This includes the design of the testing facility, a description of the test goals, and a discussion of the results. This paper finally describes oil-switch trigger pulser testing on one of the four Aurora Blumlein modules, which includes the hardware design and operation, the testing goals, hardware installation, and test results. 9 refs., 26 figs

  20. Solid state bistable power switch

    Science.gov (United States)

    Bartko, J.; Shulman, H.

    1970-01-01

    Tin and copper provide high current and switching time capabilities for high-current resettable fuses. They show the best performance for trip current and degree of reliability, and have low coefficients of thermal expansion.

  1. Electron collisions in gas switches

    International Nuclear Information System (INIS)

    Christophorou, L.G.

    1989-01-01

    Many technologies rely on the conduction/insulation properties of gaseous matter for their successful operation. Many others (e.g., pulsed power technologies) rely on the rapid change (switching or modulation) of the properties of gaseous matter from an insulator to a conductor and vice versa. Studies of electron collision processes in gases aided the development of pulsed power gas switches, and in this paper we shall briefly illustrate the kind of knowledge on electron collision processes which is needed to optimize the performance of such switching devices. To this end, we shall refer to three types of gas switches: spark gap closing, self-sustained diffuse discharge closing, and externally-sustained diffuse discharge opening. 24 refs., 15 figs., 2 tabs

  2. High PRF high current switch

    Science.gov (United States)

    Moran, Stuart L.; Hutcherson, R. Kenneth

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  3. TopWorx/GO switch new generation nuclear qualified proximity position sensors

    International Nuclear Information System (INIS)

    Merrifield, G.

    2011-01-01

    An overview of the benefits of installing TopWorx/GO Nuclear Qualified Proximity Position Sensors instead of traditional mechanical switches. Mechanical switches have been the standard for the nuclear industry for years, but that is only because of lack of competition. Because of multiple moving parts, three-piece design, and new low current control systems, mechanical switches are susceptible to a host of environmental factors that cause them to break and/or fail. TopWorx/GO Switch is a smaller, rugged, dependable, one-piece Stainless Steel proximity position sensor that that exceeds CANDU and Global Qualification Levels, easily replacing mechanical switches. It is the only position sensor to meet or exceed Westinghouse AP 1000 specifications as well. Nuclear facilities save money in maintenance reductions, extended PM's and reduction in 'Man REM' hours. This is achieved by not having to service and replace GO Switch position sensors as often as mechanical switches, since their qualified life is 100 years +1 Post Accident submerged. Plant safety is increased due to less switch failure, higher qualification testing levels, repeatability and longer qualified life. (author)

  4. Chromatic interocular-switch rivalry.

    Science.gov (United States)

    Christiansen, Jens H; D'Antona, Anthony D; Shevell, Steven K

    2017-05-01

    Interocular-switch rivalry (also known as stimulus rivalry) is a kind of binocular rivalry in which two rivalrous images are swapped between the eyes several times a second. The result is stable periods of one image and then the other, with stable intervals that span many eye swaps (Logothetis, Leopold, & Sheinberg, 1996). Previous work used this close kin of binocular rivalry with rivalrous forms. Experiments here test whether chromatic interocular-switch rivalry, in which the swapped stimuli differ in only chromaticity, results in slow alternation between two colors. Swapping equiluminant rivalrous chromaticities at 3.75 Hz resulted in slow perceptual color alternation, with one or the other color often continuously visible for two seconds or longer (during which there were 15+ eye swaps). A well-known theory for sustained percepts from interocular-switch rivalry with form is inhibitory competition between binocular neurons driven by monocular neurons with matched orientation tuning in each eye; such binocular neurons would produce a stable response when a given orientation is swapped between the eyes. A similar model can account for the percepts here from chromatic interocular-switch rivalry and is underpinned by the neurophysiological finding that color-preferring binocular neurons are driven by monocular neurons from each eye with well-matched chromatic selectivity (Peirce, Solomon, Forte, & Lennie, 2008). In contrast to chromatic interocular-switch rivalry, luminance interocular-switch rivalry with swapped stimuli that differ in only luminance did not result in slowly alternating percepts of different brightnesses.

  5. Intelligent switches of integrated lightwave circuits with core telecommunication functions

    Science.gov (United States)

    Izhaky, Nahum; Duer, Reuven; Berns, Neil; Tal, Eran; Vinikman, Shirly; Schoenwald, Jeffrey S.; Shani, Yosi

    2001-05-01

    We present a brief overview of a promising switching technology based on Silica on Silicon thermo-optic integrated circuits. This is basically a 2D solid-state optical device capable of non-blocking switching operation. Except of its excellent performance (insertion lossvariable output power control (attenuation), for instance, to equalize signal levels and compensate for unbalanced different optical input powers, or to equalize unbalanced EDFA gain curve. We examine the market segments appropriate for the switch size and technology, followed by a discussion of the basic features of the technology. The discussion is focused on important requirements from the switch and the technology (e.g., insertion loss, power consumption, channel isolation, extinction ratio, switching time, and heat dissipation). The mechanical design is also considered. It must take into account integration of optical fiber, optical planar wafer, analog electronics and digital microprocessor controls, embedded software, and heating power dissipation. The Lynx Photon.8x8 switch is compared to competing technologies, in terms of typical market performance requirements.

  6. Light-Induced Switching of Tunable Single-Molecule Junctions

    KAUST Repository

    Sendler, Torsten

    2015-04-16

    A major goal of molecular electronics is the development and implementation of devices such as single-molecular switches. Here, measurements are presented that show the controlled in situ switching of diarylethene molecules from their nonconductive to conductive state in contact to gold nanoelectrodes via controlled light irradiation. Both the conductance and the quantum yield for switching of these molecules are within a range making the molecules suitable for actual devices. The conductance of the molecular junctions in the opened and closed states is characterized and the molecular level E 0, which dominates the current transport in the closed state, and its level broadening Γ are identified. The obtained results show a clear light-induced ring forming isomerization of the single-molecule junctions. Electron withdrawing side-groups lead to a reduction of conductance, but do not influence the efficiency of the switching mechanism. Quantum chemical calculations of the light-induced switching processes correlate these observations with the fundamentally different low-lying electronic states of the opened and closed forms and their comparably small modification by electron-withdrawing substituents. This full characterization of a molecular switch operated in a molecular junction is an important step toward the development of real molecular electronics devices.

  7. Light-Induced Switching of Tunable Single-Molecule Junctions

    KAUST Repository

    Sendler, Torsten; Luka-Guth, Katharina; Wieser, Matthias; Lokamani; Wolf, Jannic Sebastian; Helm, Manfred; Gemming, Sibylle; Kerbusch, Jochen; Scheer, Elke; Huhn, Thomas; Erbe, Artur

    2015-01-01

    A major goal of molecular electronics is the development and implementation of devices such as single-molecular switches. Here, measurements are presented that show the controlled in situ switching of diarylethene molecules from their nonconductive to conductive state in contact to gold nanoelectrodes via controlled light irradiation. Both the conductance and the quantum yield for switching of these molecules are within a range making the molecules suitable for actual devices. The conductance of the molecular junctions in the opened and closed states is characterized and the molecular level E 0, which dominates the current transport in the closed state, and its level broadening Γ are identified. The obtained results show a clear light-induced ring forming isomerization of the single-molecule junctions. Electron withdrawing side-groups lead to a reduction of conductance, but do not influence the efficiency of the switching mechanism. Quantum chemical calculations of the light-induced switching processes correlate these observations with the fundamentally different low-lying electronic states of the opened and closed forms and their comparably small modification by electron-withdrawing substituents. This full characterization of a molecular switch operated in a molecular junction is an important step toward the development of real molecular electronics devices.

  8. Magnonic interferometric switch for multi-valued logic circuits

    Science.gov (United States)

    Balynsky, Michael; Kozhevnikov, Alexander; Khivintsev, Yuri; Bhowmick, Tonmoy; Gutierrez, David; Chiang, Howard; Dudko, Galina; Filimonov, Yuri; Liu, Guanxiong; Jiang, Chenglong; Balandin, Alexander A.; Lake, Roger; Khitun, Alexander

    2017-01-01

    We investigated a possible use of the magnonic interferometric switches in multi-valued logic circuits. The switch is a three-terminal device consisting of two spin channels where input, control, and output signals are spin waves. Signal modulation is achieved via the interference between the source and gate spin waves. We report experimental data on a micrometer scale prototype based on the Y3Fe2(FeO4)3 structure. The output characteristics are measured at different angles of the bias magnetic field. The On/Off ratio of the prototype exceeds 13 dB at room temperature. Experimental data are complemented by the theoretical analysis and the results of micro magnetic simulations showing spin wave propagation in a micrometer size magnetic junction. We also present the results of numerical modeling illustrating the operation of a nanometer-size switch consisting of just 20 spins in the source-drain channel. The utilization of spin wave interference as a switching mechanism makes it possible to build nanometer-scale logic gates, and minimize energy per operation, which is limited only by the noise margin. The utilization of phase in addition to amplitude for information encoding offers an innovative route towards multi-state logic circuits. We describe possible implementation of the three-value logic circuits based on the magnonic interferometric switches. The advantages and shortcomings inherent in interferometric switches are also discussed.

  9. Resistance switching at the nanometre scale in amorphous carbon

    International Nuclear Information System (INIS)

    Sebastian, Abu; Rossel, Christophe; Pozidis, Haralampos; Eleftheriou, Evangelos; Pauza, Andrew; Shelby, Robert M; RodrIguez, Arantxa Fraile

    2011-01-01

    The electrical transport and resistance switching mechanism in amorphous carbon (a-C) is investigated at the nanoscale. The electrical conduction in a-C thin films is shown to be captured well by a Poole-Frenkel transport model that involves nonisolated traps. Moreover, at high electric fields a field-induced threshold switching phenomenon is observed. The following resistance change is attributed to Joule heating and subsequent localized thermal annealing. We demonstrate that the mechanism is mostly due to clustering of the existing sp 2 sites within the sp 3 matrix. The electrical conduction behaviour, field-induced switching and Joule-heating-induced rearrangement of atomic order resulting in a resistance change are all reminiscent of conventional phase-change memory materials. This suggests the potential of a-C as a similar nonvolatile memory candidate material.

  10. Switched capacitor DC-DC converter with switch conductance modulation and Pesudo-fixed frequency control

    DEFF Research Database (Denmark)

    Larsen, Dennis Øland; Vinter, Martin; Jørgensen, Ivan Harald Holger

    A switched capacitor dc-dc converter with frequency-planned control is presented. By splitting the output stage switches in eight segments the output voltage can be regulated with a combination of switching frequency and switch conductance. This allows for switching at predetermined frequencies, 31...

  11. A Switch Is Not a Switch: Syntactically-Driven Bilingual Language Control

    Science.gov (United States)

    Gollan, Tamar H.; Goldrick, Matthew

    2018-01-01

    The current study investigated the possibility that language switches could be relatively automatically triggered by context. "Single-word switches," in which bilinguals switched languages on a single word in midsentence and then immediately switched back, were contrasted with more complete "whole-language switches," in which…

  12. Principles of broadband switching and networking

    CERN Document Server

    Liew, Soung C

    2010-01-01

    An authoritative introduction to the roles of switching and transmission in broadband integrated services networks Principles of Broadband Switching and Networking explains the design and analysis of switch architectures suitable for broadband integrated services networks, emphasizing packet-switched interconnection networks with distributed routing algorithms. The text examines the mathematical properties of these networks, rather than specific implementation technologies. Although the pedagogical explanations in this book are in the context of switches, many of the fundamenta

  13. Action of Molecular Switches in GPCRs - Theoretical and Experimental Studies

    Science.gov (United States)

    Trzaskowski, B; Latek, D; Yuan, S; Ghoshdastider, U; Debinski, A; Filipek, S

    2012-01-01

    G protein coupled receptors (GPCRs), also called 7TM receptors, form a huge superfamily of membrane proteins that, upon activation by extracellular agonists, pass the signal to the cell interior. Ligands can bind either to extracellular N-terminus and loops (e.g. glutamate receptors) or to the binding site within transmembrane helices (Rhodopsin-like family). They are all activated by agonists although a spontaneous auto-activation of an empty receptor can also be observed. Biochemical and crystallographic methods together with molecular dynamics simulations and other theoretical techniques provided models of the receptor activation based on the action of so-called “molecular switches” buried in the receptor structure. They are changed by agonists but also by inverse agonists evoking an ensemble of activation states leading toward different activation pathways. Switches discovered so far include the ionic lock switch, the 3-7 lock switch, the tyrosine toggle switch linked with the nPxxy motif in TM7, and the transmission switch. The latter one was proposed instead of the tryptophan rotamer toggle switch because no change of the rotamer was observed in structures of activated receptors. The global toggle switch suggested earlier consisting of a vertical rigid motion of TM6, seems also to be implausible based on the recent crystal structures of GPCRs with agonists. Theoretical and experimental methods (crystallography, NMR, specific spectroscopic methods like FRET/BRET but also single-molecule-force-spectroscopy) are currently used to study the effect of ligands on the receptor structure, location of stable structural segments/domains of GPCRs, and to answer the still open question on how ligands are binding: either via ensemble of conformational receptor states or rather via induced fit mechanisms. On the other hand the structural investigations of homo- and heterodimers and higher oligomers revealed the mechanism of allosteric signal transmission and receptor

  14. Bistability in a Metabolic Network Underpins the De Novo Evolution of Colony Switching in Pseudomonas fluorescens

    DEFF Research Database (Denmark)

    Gallie, Jenna; Libby, Eric; Bertels, Frederic

    2015-01-01

    Phenotype switching is commonly observed in nature. This prevalence has allowed the elucidation of a number of underlying molecular mechanisms. However, little is known about how phenotypic switches arise and function in their early evolutionary stages. The first opportunity to provide empirical ...

  15. Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

    CERN Document Server

    Kaltenbacher, T; Doser, M; Kellerbauer, A; Pribyl, W

    2013-01-01

    A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2K and in a high magnetic field of at least 0.5T. This piezoelectric switch shows very low insertion loss of less than -0.1dB within a bandwidth of 100MHz when operated at 4.2K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

  16. Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Kaltenbacher, Thomas, E-mail: thomas.kaltenbacher@cern.ch [Physics and Accelerator Departments, CERN, 1211 Geneva 23 (Switzerland); Institute of Electronics, Graz University of Technology, Inffeldgasse 12, 8010 Graz (Austria); Caspers, Fritz; Doser, Michael [Physics and Accelerator Departments, CERN, 1211 Geneva 23 (Switzerland); Kellerbauer, Alban [Max Planck Institute for Nuclear Physics, Saupfercheckweg 1, 69117 Heidelberg (Germany); Pribyl, Wolfgang [Institute of Electronics, Graz University of Technology, Inffeldgasse 12, 8010 Graz (Austria)

    2013-11-21

    A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2 K and in a high magnetic field of at least 0.5 T. This piezoelectric switch shows very low insertion loss of less than −0.1 dB within a bandwidth of 100 MHz when operated at 4.2 K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

  17. Modelling switching-time effects in high-frequency power conditioning networks

    Science.gov (United States)

    Owen, H. A.; Sloane, T. H.; Rimer, B. H.; Wilson, T. G.

    1979-01-01

    Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.

  18. Switching behaviour of individual Ag-TCNQ nanowires: an in situ transmission electron microscopy study

    Science.gov (United States)

    Ran, Ke; Rösner, Benedikt; Butz, Benjamin; Fink, Rainer H.; Spiecker, Erdmann

    2016-10-01

    The organic semiconductor silver-tetracyanoquinodimethane (Ag-TCNQ) exhibits electrical switching and memory characteristics. Employing a scanning tunnelling microscopy setup inside a transmission electron microscope, the switching behaviour of individual Ag-TCNQ nanowires (NWs) is investigated in detail. For a large number of NWs, the switching between a high (OFF) and a low (ON) resistance state was successfully stimulated by negative bias sweeps. Fitting the experimental I-V curves with a Schottky emission function makes the switching features prominent and thus enables a direct evaluation of the switching process. A memory cycle including writing, reading and erasing features is demonstrated at an individual NW. Moreover, electronic failure mechanisms due to Joule heating are discussed. These findings have a significant impact on our understanding of the switching behaviour of Ag-TCNQ.

  19. Switching auditory attention using spatial and non-spatial features recruits different cortical networks.

    Science.gov (United States)

    Larson, Eric; Lee, Adrian K C

    2014-01-01

    Switching attention between different stimuli of interest based on particular task demands is important in many everyday settings. In audition in particular, switching attention between different speakers of interest that are talking concurrently is often necessary for effective communication. Recently, it has been shown by multiple studies that auditory selective attention suppresses the representation of unwanted streams in auditory cortical areas in favor of the target stream of interest. However, the neural processing that guides this selective attention process is not well understood. Here we investigated the cortical mechanisms involved in switching attention based on two different types of auditory features. By combining magneto- and electro-encephalography (M-EEG) with an anatomical MRI constraint, we examined the cortical dynamics involved in switching auditory attention based on either spatial or pitch features. We designed a paradigm where listeners were cued in the beginning of each trial to switch or maintain attention halfway through the presentation of concurrent target and masker streams. By allowing listeners time to switch during a gap in the continuous target and masker stimuli, we were able to isolate the mechanisms involved in endogenous, top-down attention switching. Our results show a double dissociation between the involvement of right temporoparietal junction (RTPJ) and the left inferior parietal supramarginal part (LIPSP) in tasks requiring listeners to switch attention based on space and pitch features, respectively, suggesting that switching attention based on these features involves at least partially separate processes or behavioral strategies. © 2013 Elsevier Inc. All rights reserved.

  20. An Integrated Model of Cognitive Control in Task Switching

    Science.gov (United States)

    Altmann, Erik M.; Gray, Wayne D.

    2008-01-01

    A model of cognitive control in task switching is developed in which controlled performance depends on the system maintaining access to a code in episodic memory representing the most recently cued task. The main constraint on access to the current task code is proactive interference from old task codes. This interference and the mechanisms that…

  1. Fission yeast mating-type switching: programmed damage and repair

    DEFF Research Database (Denmark)

    Egel, Richard

    2005-01-01

    Mating-type switching in fission yeast follows similar rules as in budding yeast, but the underlying mechanisms are entirely different. Whilst the initiating double-strand cut in Saccharomyces cerevisiae requires recombinational repair for survival, the initial damage in Schizosaccharomyces pombe...

  2. Smooth muscle cell phenotypic switching in stroke.

    Science.gov (United States)

    Poittevin, Marine; Lozeron, Pierre; Hilal, Rose; Levy, Bernard I; Merkulova-Rainon, Tatiana; Kubis, Nathalie

    2014-06-01

    Disruption of cerebral blood flow after stroke induces cerebral tissue injury through multiple mechanisms that are not yet fully understood. Smooth muscle cells (SMCs) in blood vessel walls play a key role in cerebral blood flow control. Cerebral ischemia triggers these cells to switch to a phenotype that will be either detrimental or beneficial to brain repair. Moreover, SMC can be primarily affected genetically or by toxic metabolic molecules. After stroke, this pathological phenotype has an impact on the incidence, pattern, severity, and outcome of the cerebral ischemic disease. Although little research has been conducted on the pathological role and molecular mechanisms of SMC in cerebrovascular ischemic diseases, some therapeutic targets have already been identified and could be considered for further pharmacological development. We examine these different aspects in this review.

  3. CMOS integrated switching power converters

    CERN Document Server

    Villar-Pique, Gerard

    2011-01-01

    This book describes the structured design and optimization of efficient, energy processing integrated circuits. The approach is multidisciplinary, covering the monolithic integration of IC design techniques, power electronics and control theory. In particular, this book enables readers to conceive, synthesize, design and implement integrated circuits with high-density high-efficiency on-chip switching power regulators. Topics covered encompass the structured design of the on-chip power supply, efficiency optimization, IC-compatible power inductors and capacitors, power MOSFET switches and effi

  4. All-fiber polarization switch

    Science.gov (United States)

    Knape, Harald; Margulis, Walter

    2007-03-01

    We report an all-fiber polarization switch made out of silica-based microstructured fiber suitable for Q-switching all-fiber lasers. Nanosecond high-voltage pulses are used to heat and expand an internal electrode to cause λ/2-polarization rotation in less than 10 ns for 1.5 μm light. The 10 cm long component has an experimentally measured optical insertion loss of 0.2 dB and a 0-10 kHz repetition frequency capacity and has been durability tested for more than 109 pulses.

  5. Fast switching of bistable magnetic nanowires through collective spin reversal

    Science.gov (United States)

    Vindigni, Alessandro; Rettori, Angelo; Bogani, Lapo; Caneschi, Andrea; Gatteschi, Dante; Sessoli, Roberta; Novak, Miguel A.

    2005-08-01

    The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic states difficult. We suggest that finite-size segments can show a fast switching if collective reversal of the spins is taken into account. This mechanism gives rise at low temperatures to a scaling law for the dynamic susceptibility that has been experimentally observed for the dilute molecular chain Co(hfac)2NitPhOMe. These results suggest a possible way of engineering nanowires for fast switching of the magnetization.

  6. Active Molecular Plasmonics: Controlling Plasmon Resonances with Molecular Switches

    KAUST Repository

    Zheng, Yue Bing

    2009-02-11

    A gold nanodisk array, coated with bistable, redox-controllable [2]rotaxane molecules, when exposed to chemical oxidants and reductants, undergoes switching of its plasmonic properties reversibly. By contrast, (i) bare gold nanodisks and (ii) disks coated with a redox-active, but mechanically inert, control compound do not display surface-plasmon-based switching. Along with calculations based on time-dependent density functional theory, these experimental observations suggest that the nanoscale movements within surface-bound “molecular machines” can be used as the active components in plasmonic devices.

  7. Active Molecular Plasmonics: Controlling Plasmon Resonances with Molecular Switches

    KAUST Repository

    Zheng, Yue Bing; Yang, Ying-Wei; Jensen, Lasse; Fang, Lei; Juluri, Bala Krishna; Flood, Amar H.; Weiss, Paul S.; Stoddart, J. Fraser; Huang, Tony Jun

    2009-01-01

    A gold nanodisk array, coated with bistable, redox-controllable [2]rotaxane molecules, when exposed to chemical oxidants and reductants, undergoes switching of its plasmonic properties reversibly. By contrast, (i) bare gold nanodisks and (ii) disks coated with a redox-active, but mechanically inert, control compound do not display surface-plasmon-based switching. Along with calculations based on time-dependent density functional theory, these experimental observations suggest that the nanoscale movements within surface-bound “molecular machines” can be used as the active components in plasmonic devices.

  8. Switching Fuzzy Guaranteed Cost Control for Nonlinear Networked Control Systems

    Directory of Open Access Journals (Sweden)

    Linqin Cai

    2014-01-01

    Full Text Available This paper deals with the problem of guaranteed cost control for a class of nonlinear networked control systems (NCSs with time-varying delay. A guaranteed cost controller design method is proposed to achieve the desired control performance based on the switched T-S fuzzy model. The switching mechanism is introduced to handle the uncertainties of NCSs. Based on Lyapunov functional approach, some sufficient conditions for the existence of state feedback robust guaranteed cost controller are presented. Simulation results show that the proposed method is effective to guarantee system’s global asymptotic stability and quality of service (QoS.

  9. Design of a Command-Triggered Plasma Opening Switch for Terawatt Applications

    International Nuclear Information System (INIS)

    Savage, Mark E.; Mendel, C.W.; Seidel, David B.

    1999-01-01

    Inductive energy storage systems can have high energy density, lending to smaller, less expensive systems. The crucial element of an inductive energy storage system is the opening switch. This switch must conduct current while energy is stored in an inductor, then open quickly to transfer this energy to a load. Plasma can perform this function. The Plasma Opening Switch (POS) has been studied for more than two decades. Success with the conventional plasma opening switch has been limited. A system designed to significantly improve the performance of vacuum opening switches is described in this paper. The gap cleared of plasma is a rough figure-of-merit for vacuum opening switches. Typical opened gaps of 3 mm are reported for conventional switches. The goal for the system described in this paper is more than 3 cm. To achieve this, the command-triggered POS adds an active opening mechanism, which allows complete separation of conduction and opening. This separation is advantageous because of the widely different time scales of conduction and opening. The detrimental process of magnetic field penetration into the plasma during conduction is less important in this switch. The opening mechanism duration is much shorter than the conduction time, so penetration during opening is insignificant. Opening is accomplished with a fast magnetic field that pushes plasma out of the switch region. Plasma must be removed from the switch region to allow high voltage. This paper describes some processes important during conduction and opening, and show calculations on the trigger requirements. The design of the switch is shown. This system is designed to demonstrate both improved performance and nanosecond output jitter at levels greater than one terawatt. An amplification mechanism is described which reduces the trigger energy. Particle-in-cell simulations of the system are also shown

  10. A level switch with a sound tube

    OpenAIRE

    赤池, 誠規

    2017-01-01

    Level switches are sensor with an electrical contact output at a specific liquid, powder or bulk level. Most of traditional level switches are not suitable for harsh environments. The level switch in this study connects a loudspeaker on top end of the sound tube. When liquid, powder or bulk closes bottom end of the sound tube, the level switch turns on. The level switch is suitable for harsh environments and easy to install. The aim of this study is to propose a level switch with a sound tube...

  11. Mechanism of rectification and two-type bipolar resistance switching behaviors of Pt /Pb(Zr0.52Ti0.48)O3 /Nb:SrTiO3

    Science.gov (United States)

    Liu, W. W.; Jia, C. H.; Zhang, Q.; Zhang, W. F.

    2015-12-01

    Epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) films have been grown on Nb:SrTiO3 (NSTO) (1 0 0) substrates. The films are a tetragonal perovskite phase with good density and homogeneity. Rectification behavior and two types of bipolar resistance switching (BRS) have been observed in the Pt/PZT/NSTO device. It exhibits rectification below 3 V. According to piezo force microscopy analysis, PZT film has a multidomain structure below 8 V and the device shows abnormal BRS between 3 V and 8 V. When the voltage increases above 8 V, the polarization of the PZT film tends to saturation and it becomes single domain and displays normal BRS behavior. In addition, the device demonstrates good retention and anti-fatigue properties. The transition from abnormal bipolar to normal bipolar behavior caused by ferroelectric polarization can broaden device applications and enable large flexibility in terms of memory architecture.

  12. Mechanism of rectification and two-type bipolar resistance switching behaviors of Pt /Pb(Zr0.52Ti0.48)O3 /Nb:SrTiO3

    International Nuclear Information System (INIS)

    Liu, W W; Jia, C H; Zhang, Q; Zhang, W F

    2015-01-01

    Epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) films have been grown on Nb:SrTiO 3 (NSTO) (1 0 0) substrates. The films are a tetragonal perovskite phase with good density and homogeneity. Rectification behavior and two types of bipolar resistance switching (BRS) have been observed in the Pt/PZT/NSTO device. It exhibits rectification below 3 V. According to piezo force microscopy analysis, PZT film has a multidomain structure below 8 V and the device shows abnormal BRS between 3 V and 8 V. When the voltage increases above 8 V, the polarization of the PZT film tends to saturation and it becomes single domain and displays normal BRS behavior. In addition, the device demonstrates good retention and anti-fatigue properties. The transition from abnormal bipolar to normal bipolar behavior caused by ferroelectric polarization can broaden device applications and enable large flexibility in terms of memory architecture. (paper)

  13. Study of switching behavior of exchange-coupled nanomagnets by transverse magnetization metrology

    Science.gov (United States)

    Dey, Himadri S.; Csaba, Gyorgy; Bernstein, Gary H.; Porod, Wolfgang

    2017-05-01

    We investigate the static switching modes of nanomagnets patterned from antiferromagnetically exchange-coupled magnetic multilayers, and compare them to nanomagnets having only dipole coupling between the ferromagnetic layers. Vibrating sample magnetometry experiments, supported by micromagnetic simulations, reveal two distinct switching mechanisms between the exchange-coupled and only dipole-coupled nanomagnets. The exchange-coupled nanomagnets exhibit gradual switching of the layers, dictated by the strong antiferromagnetic exchange coupling present between the layers. However, the layers of the only dipole-coupled nanomagnets show abrupt nucleation/growth type switching. A comprehensive understanding of the switching modes of such layered and patterned systems can add new insight into the reversal mechanisms of similar systems employed for spintronic and magneto-logic device applications.

  14. Evaluation of the Delivery QoS Characteristics of Gigabit Ethernet Switches

    CERN Document Server

    Beuran, Razvan; Davies, Neil; Dobinson, Robert W

    2004-01-01

    The event selection system for ATLAS is designed to perform real-time image processing on particle collision data equivalent to 2 TB/s. This data is filtered by a multi-level architecture, resulting in 200 GB/s of data analysed by a distributed system consisting of several thousand PCs and switches. As part of our ongoing work on this system, we performed tests on several Gigabit Ethernet switches manufactured by market leaders, using our custom-built test equipment. We analysed the implications of running network devices at, and just beyond, saturation while deploying service differentiation mechanisms. We quantified the quality degradation that traffic flows experienced when passing through switches. We focused on emergent properties in saturation, including fairness and fidelity to expectations. We discuss the ideals for switch behaviour and compare them against the observed behaviour of real implementations of differentiation mechanisms in switches. This creates a generic benchmark, which is independent o...

  15. Improvement in the heat transfer of a gas filled thermal switch

    International Nuclear Information System (INIS)

    Yamamoto, J.

    1984-01-01

    This chapter attempts to clarify the heat transfer mechanism of a gas filled stainless steel tube, and shows how the maximum heat transfer rate is determined under various filling pressures. The thermal switch is a convenient device for a thermal link between the cold heat of a cryocooler and a magnet dewar, because the switch acts as an active thermal conductor at the precooling stage and as an insulator after collecting liquid helium in the dewar. Topics considered include the switch structure, the heat transfer process, the delay of condensation, and the precooling stage and switching. It is determined that the heat transfer mechanism of the gas filled switch is due to normal nucleate boiling at the bottom and condensation on the upper cone. The higher the initial pressure, the larger the maximum heat flow obtained. Evaporation and condensation surfaces play an important role in the heat transfer rate

  16. A graphene integrated highly transparent resistive switching memory device

    Science.gov (United States)

    Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

    2018-05-01

    We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

  17. Comparison Between Switching and Creativity Among Bilingual and Monolingual Children

    Directory of Open Access Journals (Sweden)

    Rahim Yousefi

    2017-06-01

    Conclusion In accordance with the results of the study, it can be concluded that learning English through educational institutions, and at an advanced level, significantly increases the switching capability in children as well as their scores across the three components of creativity (fluency, flexibility, and elaboration. Therefore, the role of second language acquisition should be highlighted because of its contribution to children's creativity and ability to switch. In general, better performances of children are attributed to the capability of switching languages, specific cognitive mechanisms used in the two systems of languages, their familiarity with a new culture and customs while learning a new language, the intensive training sessions as well as the special atmosphere prevailing in the classes.

  18. Industry switching in developing countries

    DEFF Research Database (Denmark)

    Newman, Carol; Rand, John; Tarp, Finn

    2013-01-01

    Firm turnover (i.e., firm entry and exit) is a well-recognized source of sector-level productivity growth. In contrast, the role and importance of firms that switch activities from one sector to another is not well understood. Firm switchers are likely to be unique, differing from both newly esta...

  19. Nanoscale organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

    2014-01-01

    Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

  20. Design of convergent switched systems

    NARCIS (Netherlands)

    Berg, van den R.A.; Pogromsky, A.Y.; Leonov, G.A.; Rooda, J.E.; Pettersen, K.Y.; Gravdahl, J.T.; Nijmeijer, H.

    2006-01-01

    In this paper we deal with the problem of rendering hybrid/nonlinear systems into convergent closed-loop systems by means of a feedback law or switching rules. We illustrate our approach to this problem by means of two examples: the anti-windup design for a marginally stable system with input

  1. Incorrect predictions reduce switch costs.

    Science.gov (United States)

    Kleinsorge, Thomas; Scheil, Juliane

    2015-07-01

    In three experiments, we combined two sources of conflict within a modified task-switching procedure. The first source of conflict was the one inherent in any task switching situation, namely the conflict between a task set activated by the recent performance of another task and the task set needed to perform the actually relevant task. The second source of conflict was induced by requiring participants to guess aspects of the upcoming task (Exps. 1 & 2: task identity; Exp. 3: position of task precue). In case of an incorrect guess, a conflict accrues between the representation of the guessed task and the actually relevant task. In Experiments 1 and 2, incorrect guesses led to an overall increase of reaction times and error rates, but they reduced task switch costs compared to conditions in which participants predicted the correct task. In Experiment 3, incorrect guesses resulted in faster performance overall and to a selective decrease of reaction times in task switch trials when the cue-target interval was long. We interpret these findings in terms of an enhanced level of controlled processing induced by a combination of two sources of conflict converging upon the same target of cognitive control. Copyright © 2015 Elsevier B.V. All rights reserved.

  2. Stability of Randomly Switched Diffusions

    DEFF Research Database (Denmark)

    Schiøler, Henrik; Leth, John-Josef; Gholami, Mehdi

    2012-01-01

    This paper provides a sufficient criterion for ε-moment stability (boundedness) and ergodicity for a class of systems comprising a finite set of diffusions among which switching is governed by a continuous time Markov chain. Stability/instability properties for each separate subsystem are assumed...

  3. Industry Switching in Developing Countries

    DEFF Research Database (Denmark)

    Newman, Carol; Rand, John; Tarp, Finn

    Firm turnover (i.e. firm entry and exit) is a well-recognized source of sectorlevel productivity growth across developing and developed countries. In contrast, the role and importance of firms switching activities from one sector to another is little understood. Firm switchers are likely...

  4. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  5. High voltage MOSFET switching circuit

    Science.gov (United States)

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  6. Protection and switching system for the RFX power supply

    International Nuclear Information System (INIS)

    Browning, J.L.; Gray, J.W.; Mace, T.A.; Varley, G.L.

    1986-01-01

    The RFX toroidal field power supply comprises a large 4.8MJ (max) modular capacitor bank and four 14MW AC/DC converter flat-top power supply modules. The high fault level associated with the capacitor banks presents a problem in the design of the switching system, since mistiming could produce large currents in the flat-top supplies. The poloidal circuit consists of four groups of magnetising windings connected in series, each with its own flat-top convertor supply and opening switch transfer system. The flat-top converter supplies are needed when the transfer voltage has fallen from approximately 40kV to 1kV. Solutions to the problem of designing a fault-tolerant system which presents no danger to the flat-top converters are described in the paper. The adopted methods make use of hybrid ignitron/mechanical switches to give the required combination of switching speed and current carrying capacity, together with careful attention to the circuit layout of different switching elements. (author)

  7. Power requirements reducing of FBG based all-optical switching

    Science.gov (United States)

    Scholtz, Ľubomír.; Solanská, Michaela; Ladányi, Libor; Müllerová, Jarmila

    2017-12-01

    Although Fiber Bragg gratings (FBGs) are well known devices, their using as all-optical switching elements has been still examined. Current research is focused on optimization of their properties for their using in future all-optical networks. The main problem are high switching intensities needed for achieving the changes of the transmission state. Over several years switching intensities have been reduced from hundreds of GW/cm2 to tens of MW/cm2 by selecting appropriate gratings and signal parameters or using suitable materials. Two principal nonlinear effects with similar power requirements can result in the bistable transmission/reflection of an input optical pulse. In the self-phase modulation (SPM) regime switching is achieved by the intense probe pulse itself. Using cross-phase modulation (XPM) a strong pump alters the FBG refractive index experienced by a weak probe pulse. As a result of this the detuning of the probe pulse from the center of the photonic band gap occurs. Using of XPM the effect of modulation instability is reduced. Modulation instability which is the main SPM degradation mechanism. We focused on nonlinear FBGs based on chalcogenide glasses which are very often used in various applications. Thanks to high nonlinear parameters chalcogenide glasses are suitable candidates for reducing switching intensities of nonlinear FBGs.

  8. Effect of texturing on polarization switching dynamics in ferroelectric ceramics

    Science.gov (United States)

    Zhukov, Sergey; Genenko, Yuri A.; Koruza, Jurij; Schultheiß, Jan; von Seggern, Heinz; Sakamoto, Wataru; Ichikawa, Hiroki; Murata, Tatsuro; Hayashi, Koichiro; Yogo, Toshinobu

    2016-01-01

    Highly (100),(001)-oriented (Ba0.85Ca0.15)TiO3 (BCT) lead-free piezoelectric ceramics were fabricated by the reactive templated grain growth method using a mixture of plate-like CaTiO3 and BaTiO3 particles. Piezoelectric properties of the ceramics with a high degree of texture were found to be considerably enhanced compared with the BCT ceramics with a low degree of texture. With increasing the Lotgering factor from 26% up to 94%, the piezoelectric properties develop towards the properties of a single crystal. The dynamics of polarization switching was studied over a broad time domain of 8 orders of magnitude and was found to strongly depend on the degree of orientation of the ceramics. Samples with a high degree of texture exhibited 2-3 orders of magnitude faster polarization switching, as compared with the ones with a low degree of texture. This was rationalized by means of the Inhomogeneous Field Mechanism model as a result of the narrower statistical distribution of the local electric field values in textured media, which promotes a more coherent switching process. The extracted microscopic parameters of switching revealed a decrease of the critical nucleus energy in systems with a high degree of texture providing more favorable switching conditions related to the enhanced ferroelectric properties of the textured material.

  9. Selective and genetic constraints on pneumococcal serotype switching.

    Directory of Open Access Journals (Sweden)

    Nicholas J Croucher

    2015-03-01

    Full Text Available Streptococcus pneumoniae isolates typically express one of over 90 immunologically distinguishable polysaccharide capsules (serotypes, which can be classified into "serogroups" based on cross-reactivity with certain antibodies. Pneumococci can alter their serotype through recombinations affecting the capsule polysaccharide synthesis (cps locus. Twenty such "serotype switching" events were fully characterised using a collection of 616 whole genome sequences from systematic surveys of pneumococcal carriage. Eleven of these were within-serogroup switches, representing a highly significant (p < 0.0001 enrichment based on the observed serotype distribution. Whereas the recombinations resulting in between-serogroup switches all spanned the entire cps locus, some of those that caused within-serogroup switches did not. However, higher rates of within-serogroup switching could not be fully explained by either more frequent, shorter recombinations, nor by genetic linkage to genes involved in β-lactam resistance. This suggested the observed pattern was a consequence of selection for preserving serogroup. Phenotyping of strains constructed to express different serotypes in common genetic backgrounds was used to test whether genotypes were physiologically adapted to particular serogroups. These data were consistent with epistatic interactions between the cps locus and the rest of the genome that were specific to serotype, but not serogroup, meaning they were unlikely to account for the observed distribution of capsule types. Exclusion of these genetic and physiological hypotheses suggested future work should focus on alternative mechanisms, such as host immunity spanning multiple serotypes within the same serogroup, which might explain the observed pattern.

  10. Evidence for Rare Capsular Switching in Streptococcus agalactiae▿

    Science.gov (United States)

    Martins, Elisabete Raquel; Melo-Cristino, José; Ramirez, Mário

    2010-01-01

    The polysaccharide capsule is a major antigenic factor in Streptococcus agalactiae (Lancefield group B streptococcus [GBS]). Previous observations suggest that exchange of capsular loci is likely to occur rather frequently in GBS, even though GBS is not known to be naturally transformable. We sought to identify and characterize putative capsular switching events, by means of a combination of phenotypic and genotypic methods, including pulsed-field gel electrophoretic profiling, multilocus sequence typing, and surface protein and pilus gene profiling. We show that capsular switching by horizontal gene transfer is not as frequent as previously suggested. Serotyping errors may be the main reason behind the overestimation of capsule switching, since phenotypic techniques are prone to errors of interpretation. The identified putative capsular transformants involved the acquisition of the entire capsular locus and were not restricted to the serotype-specific central genes, the previously suggested main mechanism underlying capsular switching. Our data, while questioning the frequency of capsular switching, provide clear evidence for in vivo capsular transformation in S. agalactiae, which may be of critical importance in planning future vaccination strategies against this pathogen. PMID:20023016

  11. Monolithic, High-Speed Fiber-Optic Switching Array for Lidar, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This NASA SBIR Phase II effort will develop a 1 x 10 prototype non-mechanical fiber optic switch for use with high power lasers. The proposed optical device is a...

  12. FAST TCP over optical burst switched networks: Modeling and stability analysis

    KAUST Repository

    Shihada, Basem; El-Ferik, Sami; Ho, Pin-Han

    2013-01-01

    congestion-control mechanism in bufferless Optical Burst Switched Networks (OBS). The paper first shows that random burst contentions are essential to stabilize the network, but cause throughput degradation in FAST TCP flows when a burst with all the packets

  13. Switch-connected HyperX network

    Science.gov (United States)

    Chen, Dong; Heidelberger, Philip

    2018-02-13

    A network system includes a plurality of sub-network planes and global switches. The sub-network planes have a same network topology as each other. Each of the sub-network planes includes edge switches. Each of the edge switches has N ports. Each of the global switches is configured to connect a group of edge switches at a same location in the sub-network planes. In each of the sub-network planes, some of the N ports of each of the edge switches are connected to end nodes, and others of the N ports are connected to other edge switches in the same sub-network plane, other of the N ports are connected to at least one of the global switches.

  14. Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

    International Nuclear Information System (INIS)

    Qiao Shi-Zhu; Kang Shi-Shou; Li Qiang; Zhong Hai; Kang Yun; Yu Shu-Yun; Han Guang-Bing; Yan Shi-Shen; Mei Liang-Mo; Qin Yu-Feng

    2014-01-01

    Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar (unipolar and bipolar) resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of Al 2 O 3 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect. (interdisciplinary physics and related areas of science and technology)

  15. Investigating the relationship between media multitasking and processes involved in task-switching.

    Science.gov (United States)

    Alzahabi, Reem; Becker, Mark W; Hambrick, David Z

    2017-11-01

    Although multitasking with media has increased dramatically in recent years (Rideout, Foehr, & Roberts, 2010), the association between media multitasking and cognitive performance is poorly understood. In addition, the literature on the relationship between media multitasking and task-switching, one measure of cognitive control, has produced mixed results (Alzahabi & Becker, 2013; Minear et al., 2013; Ophir, Nass, & Wagner, 2009). Here we use an individual differences approach to investigate the relationship between media multitasking and task-switching performance by first examining the structure of task-switching and identifying the latent factors that contribute to switch costs. Participants performed a series of 3 different task-switching paradigms, each designed to isolate the effects of a specific putative mechanism (e.g., advanced preparation) related to task-switching performance, as well as a series of surveys to measure media multitasking and intelligence. The results suggest that task-switching performance is related to 2 somewhat independent factors, namely an advanced preparation factor and passive decay factor. In addition, multitasking with media was related to a faster ability to prepare for tasks, resulting in faster task-switching performance without a cost to accuracy. Media multitasking and intelligence were both unrelated to passive decay factors. These findings are consistent with a 2-component model of task-switching (Sohn & Anderson, 2001), as well as an automatic/executive framework of cognitive control (Schneider & Shiffrin, 1977). (PsycINFO Database Record (c) 2017 APA, all rights reserved).

  16. Isolated converter with synchronized switching leg

    NARCIS (Netherlands)

    2003-01-01

    An amplification device is disclosed providing a way of integrating a switch mode power supply and a class D amplifier (switch mode amplifier). This results in the usage of basically one magnetic component (1), one major energy storage element (4) and switches (20, 30) that are controlled in such a

  17. A CW Gunn diode bistable switching element.

    Science.gov (United States)

    Hurtado, M.; Rosenbaum, F. J.

    1972-01-01

    Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

  18. A gain-coefficient switched Alexandrite laser

    International Nuclear Information System (INIS)

    Lee, Chris J; Van der Slot, Peter J M; Boller, Klaus-J

    2013-01-01

    We report on a gain-coefficient switched Alexandrite laser. An electro-optic modulator is used to switch between high and low gain states by making use of the polarization dependent gain of Alexandrite. In gain-coefficient switched mode, the laser produces 85 ns pulses with a pulse energy of 240 mJ at a repetition rate of 5 Hz.

  19. 47 CFR 69.106 - Local switching.

    Science.gov (United States)

    2010-10-01

    ... foreign services that use local exchange switching facilities. (c) If end users of an interstate or... local exchange carriers shall establish rate elements for local switching as follows: (1) Price cap... use local exchange switching facilities for the provision of interstate or foreign services. The...

  20. Caffeine improves anticipatory processes in task switching

    NARCIS (Netherlands)

    Tieges, Zoe; Snel, Jan; Kok, Albert; Wijnen, Jasper G.; Lorist, Monicque M.; Ridderinkhof, K. Richard

    We studied the effects of moderate amounts of caffeine on task switching and task maintenance using mixed-task (AABB) blocks, in which participants alternated predictably between two tasks, and single-task (AAAA, BBBB) blocks. Switch costs refer to longer reaction times (RT) on task switch trials

  1. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  2. Control and synchronisation in switched arrival systems

    NARCIS (Netherlands)

    Rem, B.; Armbruster, H.D.

    2003-01-01

    A chaotic model of a production flow called the switched arrival system is extended to include switching times and maintenance. The probability distribution of the chaotic return times is calculated. Scheduling maintenance, loss of production due to switching, and control of the chaotic dynamics is

  3. Stochastic switching in biology: from genotype to phenotype

    International Nuclear Information System (INIS)

    Bressloff, Paul C

    2017-01-01

    There has been a resurgence of interest in non-equilibrium stochastic processes in recent years, driven in part by the observation that the number of molecules (genes, mRNA, proteins) involved in gene expression are often of order 1–1000. This means that deterministic mass-action kinetics tends to break down, and one needs to take into account the discrete, stochastic nature of biochemical reactions. One of the major consequences of molecular noise is the occurrence of stochastic biological switching at both the genotypic and phenotypic levels. For example, individual gene regulatory networks can switch between graded and binary responses, exhibit translational/transcriptional bursting, and support metastability (noise-induced switching between states that are stable in the deterministic limit). If random switching persists at the phenotypic level then this can confer certain advantages to cell populations growing in a changing environment, as exemplified by bacterial persistence in response to antibiotics. Gene expression at the single-cell level can also be regulated by changes in cell density at the population level, a process known as quorum sensing. In contrast to noise-driven phenotypic switching, the switching mechanism in quorum sensing is stimulus-driven and thus noise tends to have a detrimental effect. A common approach to modeling stochastic gene expression is to assume a large but finite system and to approximate the discrete processes by continuous processes using a system-size expansion. However, there is a growing need to have some familiarity with the theory of stochastic processes that goes beyond the standard topics of chemical master equations, the system-size expansion, Langevin equations and the Fokker–Planck equation. Examples include stochastic hybrid systems (piecewise deterministic Markov processes), large deviations and the Wentzel–Kramers–Brillouin (WKB) method, adiabatic reductions, and queuing/renewal theory. The major aim of

  4. Optimization of multi-branch switched diversity systems

    KAUST Repository

    Nam, Haewoon; Alouini, Mohamed-Slim

    2009-01-01

    A performance optimization based on the optimal switching threshold(s) for a multi-branch switched diversity system is discussed in this paper. For the conventional multi-branch switched diversity system with a single switching threshold

  5. Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

    Science.gov (United States)

    Cooper, James A.

    1986-01-01

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  6. Anomalous resistivity in the plasma opening switch

    Energy Technology Data Exchange (ETDEWEB)

    Dolgachev, G I; Zakatov, L P; Kalinin, Yu G; Kingsep, A S; Nitishinskij, M S; Ushakov, A G [Kurchatov Institute, Moscow (Russian Federation). Applied Physics Division

    1997-12-31

    Experimental studies and modelling together with analytical considerations of anomalous resistivity in the plasma opening switch (POS) are being pursued to improve the understanding of the physical mechanism of the POS conduction phase. Experiments have been undertaken for a `microsecond` POS of coaxial geometry. Measurements of Stark broadening of the H{sub {alpha}} line allowed turbulent oscillations in plasma to be found at the conductivity stage. A comparison with the modelling including low-frequency (ion-acoustic) turbulence and Doppler broadening (neutral gas temperature 1-3 eV) the electric field value to be estimated to 10-30 kV/cm. The turbulent field increased toward the cathode up to 50 kV/cm in the near-cathode layer. (author). 3 figs., 14 refs.

  7. Limiting parameters of the plasma opening switch

    International Nuclear Information System (INIS)

    Dolgachev, G.I.; Ushakov, A.G.

    2001-01-01

    Implementing programs for nuclear fusion research and X-ray generation requires the creation of superpower generators based on plasma opening switches (POSs) capable of commutating currents as high as several tens of megaamperes at output voltages of up to 5 MV and higher. The physical mechanisms limiting the POS voltage are investigated. It is shown that, as the generator voltage U g increases, the voltage multiplication factor k U POS /U g (where U POS is the POS voltage) decreases. An explanation for such a dependence is proposed, and the maximum value of the POS voltage is estimated. A POS design that enables operating in the above current and voltage ranges is considered. The design is based on applying an external magnetic field to the POS interelectrode gap, increasing the initial generator voltage, and decreasing the linear (along the perimeter of the outer electrode) density of the charge passing through the POS during the conduction phase

  8. Large aperture optical switching devices

    International Nuclear Information System (INIS)

    Goldhar, J.; Henesian, M.A.

    1983-01-01

    We have developed a new approach to constructing large aperture optical switches for next generation inertial confinement fusion lasers. A transparent plasma electrode formed in low pressure ionized gas acts as a conductive coating to allow the uniform charging of the optical faces of an electro-optic material. In this manner large electric fields can be applied longitudinally to large aperture, high aspect ratio Pockels cells. We propose a four-electrode geometry to create the necessary high conductivity plasma sheets, and have demonstrated fast (less than 10 nsec) switching in a 5x5 cm aperture KD*P Pockels cell with such a design. Detaid modelling of Pockels cell performance with plasma electrodes has been carried out for 15 and 30 cm aperture designs

  9. Shape memory thermal conduction switch

    Science.gov (United States)

    Vaidyanathan, Rajan (Inventor); Krishnan, Vinu (Inventor); Notardonato, William U. (Inventor)

    2010-01-01

    A thermal conduction switch includes a thermally-conductive first member having a first thermal contacting structure for securing the first member as a stationary member to a thermally regulated body or a body requiring thermal regulation. A movable thermally-conductive second member has a second thermal contacting surface. A thermally conductive coupler is interposed between the first member and the second member for thermally coupling the first member to the second member. At least one control spring is coupled between the first member and the second member. The control spring includes a NiTiFe comprising shape memory (SM) material that provides a phase change temperature <273 K, a transformation range <40 K, and a hysteresis of <10 K. A bias spring is between the first member and the second member. At the phase change the switch provides a distance change (displacement) between first and second member by at least 1 mm, such as 2 to 4 mm.

  10. Negation switching invariant signed graphs

    Directory of Open Access Journals (Sweden)

    Deepa Sinha

    2014-04-01

    Full Text Available A signed graph (or, $sigraph$ in short is a graph G in which each edge x carries a value $\\sigma(x \\in \\{-, +\\}$ called its sign. Given a sigraph S, the negation $\\eta(S$ of the sigraph S is a sigraph obtained from S by reversing the sign of every edge of S. Two sigraphs $S_{1}$ and $S_{2}$ on the same underlying graph are switching equivalent if it is possible to assign signs `+' (`plus' or `-' (`minus' to vertices of $S_{1}$ such that by reversing the sign of each of its edges that has received opposite signs at its ends, one obtains $S_{2}$. In this paper, we characterize sigraphs which are negation switching invariant and also see for what sigraphs, S and $\\eta (S$ are signed isomorphic.

  11. Switch for Good Community Program

    Energy Technology Data Exchange (ETDEWEB)

    Crawford, Tabitha [Balfour Beatty Military Housing Management LLC, Newtown Square, PA (United States); Amran, Martha [WattzOn, Inc., Mountain View, CA (United States)

    2013-11-19

    Switch4Good is an energy-savings program that helps residents reduce consumption from behavior changes; it was co-developed by Balfour Beatty Military Housing Management (BB) and WattzOn in Phase I of this grant. The program was offered at 11 Navy bases. Three customer engagement strategies were evaluated, and it was found that Digital Nudges (a combination of monthly consumption statements with frequent messaging via text or email) was most cost-effective. The program was delivered on-time and on-budget, and its success is based on the teamwork of local BB staff and the WattzOn team. The following graphic shows Switch4Good “by the numbers”, e.g. the scale of operations achieved during Phase I.

  12. Secure videoconferencing equipment switching system and method

    Science.gov (United States)

    Hansen, Michael E [Livermore, CA

    2009-01-13

    A switching system and method are provided to facilitate use of videoconference facilities over a plurality of security levels. The system includes a switch coupled to a plurality of codecs and communication networks. Audio/Visual peripheral components are connected to the switch. The switch couples control and data signals between the Audio/Visual peripheral components and one but nor both of the plurality of codecs. The switch additionally couples communication networks of the appropriate security level to each of the codecs. In this manner, a videoconferencing facility is provided for use on both secure and non-secure networks.

  13. Correlated randomness and switching phenomena

    Science.gov (United States)

    Stanley, H. E.; Buldyrev, S. V.; Franzese, G.; Havlin, S.; Mallamace, F.; Kumar, P.; Plerou, V.; Preis, T.

    2010-08-01

    One challenge of biology, medicine, and economics is that the systems treated by these serious scientific disciplines have no perfect metronome in time and no perfect spatial architecture-crystalline or otherwise. Nonetheless, as if by magic, out of nothing but randomness one finds remarkably fine-tuned processes in time and remarkably fine-tuned structures in space. Further, many of these processes and structures have the remarkable feature of “switching” from one behavior to another as if by magic. The past century has, philosophically, been concerned with placing aside the human tendency to see the universe as a fine-tuned machine. Here we will address the challenge of uncovering how, through randomness (albeit, as we shall see, strongly correlated randomness), one can arrive at some of the many spatial and temporal patterns in biology, medicine, and economics and even begin to characterize the switching phenomena that enables a system to pass from one state to another. Inspired by principles developed by A. Nihat Berker and scores of other statistical physicists in recent years, we discuss some applications of correlated randomness to understand switching phenomena in various fields. Specifically, we present evidence from experiments and from computer simulations supporting the hypothesis that water’s anomalies are related to a switching point (which is not unlike the “tipping point” immortalized by Malcolm Gladwell), and that the bubbles in economic phenomena that occur on all scales are not “outliers” (another Gladwell immortalization). Though more speculative, we support the idea of disease as arising from some kind of yet-to-be-understood complex switching phenomenon, by discussing data on selected examples, including heart disease and Alzheimer disease.

  14. Coating possibilities for magnetic switches

    International Nuclear Information System (INIS)

    Sharp, D.J.; Harjes, H.C.; Mann, G.A.; Morgan, F.A.

    1990-01-01

    High average power magnetic pulse compression systems are now being considered for use in several applications such as the High Power Radiation Source (HiPoRS) project. Such systems will require high reliability magnetic switches (saturable inductors) that are very efficient and have long lifetimes. One of the weakest components in magnetic switches is their interlaminar insulation. Considerations related to dielectric breakdown, thermal management of compact designs, and economical approaches for achieving these needs must be addressed. Various dielectric insulation and coating materials have been applied to Metglas foil in an attempt to solve the complex technical and practical problems associated with large magnetic switch structures. This work reports various needs, studies, results, and proposals in selecting and evaluating continuous coating approaches for magnetic foil. Techniques such as electrophoretic polymer deposition and surface chemical oxidation are discussed. We also propose continuous photofabrication processes for applying dielectric ribs or spacers to the foil which permit circulation of dielectric liquids for cooling during repetitive operation. 10 refs., 8 figs., 11 tabs

  15. Analytical Performance Evaluation of Different Switch Solutions

    Directory of Open Access Journals (Sweden)

    Francisco Sans

    2013-01-01

    Full Text Available The virtualization of the network access layer has opened new doors in how we perceive networks. With this virtualization of the network, it is possible to transform a regular PC with several network interface cards into a switch. PC-based switches are becoming an alternative to off-the-shelf switches, since they are cheaper. For this reason, it is important to evaluate the performance of PC-based switches. In this paper, we present a performance evaluation of two PC-based switches, using Open vSwitch and LiSA, and compare their performance with an off-the-shelf Cisco switch. The RTT, throughput, and fairness for UDP are measured for both Ethernet and Fast Ethernet technologies. From this research, we can conclude that the Cisco switch presents the best performance, and both PC-based switches have similar performance. Between Open vSwitch and LiSA, Open vSwitch represents a better choice since it has more features and is currently actively developed.

  16. Streamer model for high voltage water switches

    International Nuclear Information System (INIS)

    Sazama, F.J.; Kenyon, V.L. III

    1979-01-01

    An electrical switch model for high voltage water switches has been developed which predicts streamer-switching effects that correlate well with water-switch data from Casino over the past four years and with switch data from recent Aurora/AMP experiments. Preclosure rounding and postclosure resistive damping of pulseforming line voltage waveforms are explained in terms of spatially-extensive, capacitive-coupling of the conducting streamers as they propagate across the gap and in terms of time-dependent streamer resistance and inductance. The arc resistance of the Casino water switch and of a gas switch under test on Casino was determined by computer fit to be 0.5 +- 0.1 ohms and 0.3 +- 0.06 ohms respectively, during the time of peak current in the power pulse. Energy lost in the water switch during the first pulse is 18% of that stored in the pulseforming line while similar energy lost in the gas switch is 11%. The model is described, computer transient analyses are compared with observed water and gas switch data and the results - switch resistance, inductance and energy loss during the primary power pulse - are presented

  17. Hybrid colored noise process with space-dependent switching rates

    Science.gov (United States)

    Bressloff, Paul C.; Lawley, Sean D.

    2017-07-01

    A fundamental issue in the theory of continuous stochastic process is the interpretation of multiplicative white noise, which is often referred to as the Itô-Stratonovich dilemma. From a physical perspective, this reflects the need to introduce additional constraints in order to specify the nature of the noise, whereas from a mathematical perspective it reflects an ambiguity in the formulation of stochastic differential equations (SDEs). Recently, we have identified a mechanism for obtaining an Itô SDE based on a form of temporal disorder. Motivated by switching processes in molecular biology, we considered a Brownian particle that randomly switches between two distinct conformational states with different diffusivities. In each state, the particle undergoes normal diffusion (additive noise) so there is no ambiguity in the interpretation of the noise. However, if the switching rates depend on position, then in the fast switching limit one obtains Brownian motion with a space-dependent diffusivity of the Itô form. In this paper, we extend our theory to include colored additive noise. We show that the nature of the effective multiplicative noise process obtained by taking both the white-noise limit (κ →0 ) and fast switching limit (ɛ →0 ) depends on the order the two limits are taken. If the white-noise limit is taken first, then we obtain Itô, and if the fast switching limit is taken first, then we obtain Stratonovich. Moreover, the form of the effective diffusion coefficient differs in the two cases. The latter result holds even in the case of space-independent transition rates, where one obtains additive noise processes with different diffusion coefficients. Finally, we show that yet another form of multiplicative noise is obtained in the simultaneous limit ɛ ,κ →0 with ɛ /κ2 fixed.

  18. Optical Multidimensional Switching for Data Center Networks

    DEFF Research Database (Denmark)

    Kamchevska, Valerija

    2017-01-01

    . Software controlled switching using an on-chip integrated fiber switch is demonstrated and enabling of additional network functionalities such as multicast and optical grooming is experimentally confirmed. Altogether this work demonstrates the potential of optical switching technologies...... for the purpose of deploying optical switching within the network. First, the Hi-Ring data center architecture is proposed. It is based on optical multidimensional switching nodes that provide switching in hierarchically layered space, wavelength and time domain. The performance of the Hi-Ring architecture...... is evaluated experimentally and successful switching of both high capacity wavelength connections and time-shared subwavelengthconnections is demonstrated. Error-free performance is also achieved when transmitting 7 Tbit/s using multicore fiber, confirming the ability to scale the network. Moreover...

  19. Pinning Synchronization of Switched Complex Dynamical Networks

    Directory of Open Access Journals (Sweden)

    Liming Du

    2015-01-01

    Full Text Available Network topology and node dynamics play a key role in forming synchronization of complex networks. Unfortunately there is no effective synchronization criterion for pinning synchronization of complex dynamical networks with switching topology. In this paper, pinning synchronization of complex dynamical networks with switching topology is studied. Two basic problems are considered: one is pinning synchronization of switched complex networks under arbitrary switching; the other is pinning synchronization of switched complex networks by design of switching when synchronization cannot achieved by using any individual connection topology alone. For the two problems, common Lyapunov function method and single Lyapunov function method are used respectively, some global synchronization criteria are proposed and the designed switching law is given. Finally, simulation results verify the validity of the results.

  20. Synchronization in complex networks with switching topology

    International Nuclear Information System (INIS)

    Wang, Lei; Wang, Qing-guo

    2011-01-01

    This Letter investigates synchronization issues of complex dynamical networks with switching topology. By constructing a common Lyapunov function, we show that local and global synchronization for a linearly coupled network with switching topology can be evaluated by the time average of second smallest eigenvalues corresponding to the Laplacians of switching topology. This result is quite powerful and can be further used to explore various switching cases for complex dynamical networks. Numerical simulations illustrate the effectiveness of the obtained results in the end. -- Highlights: → Synchronization of complex networks with switching topology is investigated. → A common Lyapunov function is established for synchronization of switching network. → The common Lyapunov function is not necessary to monotonically decrease with time. → Synchronization is determined by the second smallest eigenvalue of its Laplacian. → Synchronization criterion can be used to investigate various switching cases.

  1. Energy storage, compression, and switching. Vol. 2

    International Nuclear Information System (INIS)

    Nardi, V.; Bostick, W.H.; Sahlin, H.

    1983-01-01

    This book is a compilation of papers presented at the Second International Conference on Energy Storage, Compression, and Switching, which was held in order to assemble active researchers with a major interest in plasma physics, electron beams, electric and magnetic energy storage systems, high voltage and high current switches, free-electron lasers, and pellet implosion plasma focus. Topics covered include: Slow systems: 50-60 Hz machinery, homopolar generators, slow capacitors, inductors, and solid state switches; Intermediate systems: fast capacitor banks; superconducting storage and switching; gas, vacuum, and dielectric switching; nonlinear (magnetic) switching; imploding liners capacitors; explosive generators; and fuses; and Fast systems: Marx, Blumlein, oil, water, and pressurized water dielectrics; switches; magnetic insulation; electron beams; and plasmas

  2. Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

    KAUST Repository

    Mayet, Abdulilah M.; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2015-01-01

    © 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

  3. Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

    KAUST Repository

    Mayet, Abdulilah M.

    2015-12-04

    © 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young\\'s modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

  4. Materials and devices for all-optical helicity-dependent switching

    Science.gov (United States)

    Salah El Hadri, Mohammed; Hehn, Michel; Malinowski, Grégory; Mangin, Stéphane

    2017-04-01

    Since the first observation of ultrafast demagnetization in Ni thin films by Beaurepaire et al 20 years ago, understanding the interaction between ultrashort laser pulses and magnetization has become a topic of huge interest. In 2007, an intriguing discovery related to ultrafast demagnetization was the observation of all-optical switching (AOS) of magnetization in ferrimagnetic GdFeCo alloy films using only femtosecond laser pulses. This review discusses the recent studies elucidating several key issues regarding the all-optical switching phenomenon. Although AOS had long been restricted to GdFeCo alloys, it turned out to be a more general phenomenon for a variety of ferrimagnetic as well as ferromagnetic materials. This discovery helped pave the way for the integration of all-optical writing in data storage industries. Nevertheless, theoretical models explaining the switching in GdFeCo alloy films do not appear to apply in the other materials, thus questioning the uniqueness of the microscopic origin of all-optical switching. By investigating the integration of all-optical switching in spintronic devices, two types of all-optical switching mechanism have been distinguished: a single-pulse heat-only switching in ferrimagnetic GdFeCo alloys, and a two regime helicity-dependent switching in both ferrimagnetic TbCo alloys and ferromagnetic Co/Pt multilayers. Another key issue discussed in this review is the necessary condition for the observation of all-optical switching. Many models have been proposed but are strongly challenged by the discovery of such switching in ferromagnets. A comprehensive investigation of the magnetic parameters governing all-optical switching demonstrate that its observation requires magnetic domains larger than the laser spot size during the cooling process; such a criterion is common for both ferri- and ferro-magnets. These investigations strongly improve our understanding and give intriguing insights into the rich physics of the ultrafast

  5. Optical switching in nonlinear photonic crystals lightly doped with nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R [Department of Physics and Astronomy, University of Western Ontario, London, ON N6A 3K7 (Canada); Lipson, R H [Department of Chemistry, University of Western Ontario, London, ON N6A 5B7 (Canada)

    2008-01-14

    A possible switching mechanism has been investigated for nonlinear photonic crystals doped with an ensemble of non-interacting three-level nanoparticles. In this scheme, an intense pump laser field is used to change the refractive index of the nonlinear photonic crystal while a weaker probe field monitors an absorption transition in the nanoparticles. In the absence of the strong laser field the system transmits the probe field when the resonance energy of the nanoparticles lies near the edge of the photonic band gap due to strong coupling between the photonic crystal and the nanoparticles. However, upon application of an intense pump laser field the system becomes absorbing due to a band edge frequency shift that arises due to a nonlinear Kerr effect which changes the refractive index of the crystal. It is anticipated that the optical switching mechanism described in this work can be used to make new types of photonic devices.

  6. Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices.

    Science.gov (United States)

    Wan, Tao; Qu, Bo; Du, Haiwei; Lin, Xi; Lin, Qianru; Wang, Da-Wei; Cazorla, Claudio; Li, Sean; Liu, Sidong; Chu, Dewei

    2018-02-15

    Resistive switching behaviour can be classified into digital and analog switching based on its abrupt and gradual resistance change characteristics. Realizing the transition from digital to analog switching in the same device is essential for understanding and controlling the performance of the devices with various switching mechanisms. Here, we investigate the resistive switching in a device made with strontium titanate (SrTiO 3 ) nanoparticles using X-ray diffractometry, scanning electron microscopy, Raman spectroscopy, and direct electrical measurements. It is found that the well-known rupture/formation of Ag filaments is responsible for the digital switching in the device with Ag as the top electrode. To modulate the switching performance, we insert a reduced graphene oxide layer between SrTiO 3 and the bottom FTO electrode owing to its good barrier property for the diffusion of Ag ions and high out-of-plane resistance. In this case, resistive switching is changed from digital to analog as determined by the modulation of interfacial resistance under applied voltage. Based on that controllable resistance, potentiation and depression behaviours are implemented as well. This study opens up new ways for the design of multifunctional devices which are promising for memory and neuromorphic computing applications. Copyright © 2017 Elsevier Inc. All rights reserved.

  7. Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

    Science.gov (United States)

    Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru; Aono, Masakazu

    2012-01-10

    An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non-volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap-type and gapless-type two-terminal atomic switches and three-terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems, such as beyond von- Neumann computers. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Low-profile high-voltage compact gas switch

    International Nuclear Information System (INIS)

    Goerz, D.A.; Wilson, M.J.; Speer, R.D.

    1997-01-01

    This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the

  9. Implementation of automatic protection switching in an optical cross connect

    OpenAIRE

    Uy, Jason

    2005-01-01

    Having a reliable network is a hard requirement for Telecommunication companies when deploying new networks. Service providers and enterprise customers lose a lot of money any time an interruption of internet service occurs. The SONETISDH specification specifies several different types of topology that support redundancy. An Automatic Protection Switching (APS) mechanism is specified for each topology to dictate how a network behaves in a failure event. For this project, a software implementa...

  10. Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

    Science.gov (United States)

    Ma, Qinli; Li, Yufan; Gopman, D. B.; Kabanov, Yu. P.; Shull, R. D.; Chien, C. L.

    2018-03-01

    An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

  11. The effect of episodic retrieval on inhibition in task switching.

    Science.gov (United States)

    Grange, James A; Kowalczyk, Agnieszka W; O'Loughlin, Rory

    2017-08-01

    Inhibition in task switching is inferred from n-2 repetition costs: the observation that ABA task switching sequences are responded to slower than CBA sequences. This is thought to reflect the persisting inhibition of Task A, which slows reactivation attempts. Mayr (2002) reported an experiment testing a critical noninhibitory account of this effect, namely episodic retrieval: If the trial parameters for Task A match across an ABA sequence, responses should be facilitated because of priming from episodic retrieval; a cost would occur if trial parameters mismatch. In a rule-switching paradigm, Mayr reported no significant difference in n-2 repetition cost when the trial parameters repeated or switched across an ABA sequence, in clear contrast to the episodic retrieval account. What remains unclear is whether successful episodic retrieval modulates the n-2 repetition cost. Across 3 experiments-including a close replication of Mayr-we find clear evidence of reduced n-2 task repetition costs when episodic retrieval is controlled. We find that the effect of episodic retrieval on the n-2 task repetition cost is increased when the cue-task relationship is made more abstract, suggesting the effect is because of interference in establishing the relevant attentional set. We also demonstrate that the episodic retrieval effect is not influenced by retrieval of low-level, perceptual, elements. Together, the data suggest the n-2 task repetition cost-typically attributable to an inhibitory mechanism-also reflects episodic retrieval effects. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

  12. Genes contribute to the switching dynamics of bistable perception.

    Science.gov (United States)

    Shannon, Robert W; Patrick, Christopher J; Jiang, Yi; Bernat, Edward; He, Sheng

    2011-03-09

    Ordinarily, the visual system provides an unambiguous representation of the world. However, at times alternative plausible interpretations of a given stimulus arise, resulting in a dynamic perceptual alternation of the differing interpretations, commonly referred to as bistable or rivalrous perception. Recent research suggests that common neural mechanisms may be involved in the dynamics of very different types of bistable phenomena. Further, evidence has emerged that genetic factors may be involved in determining the rate of switch for at least one form of bistable perception, known as binocular rivalry. The current study evaluated whether genetic factors contribute to the switching dynamics for distinctly different variants of bistable perception in the same participant sample. Switching rates were recorded for MZ and DZ twin participants in two different bistable perception tasks, binocular rivalry and the Necker Cube. Strong concordance in switching rates across both tasks was evident for MZ but not DZ twins, indicating that genetic factors indeed contribute to the dynamics of multiple forms of bistable perception.

  13. LMI-based adaptive reliable H∞ static output feedback control against switched actuator failures

    Science.gov (United States)

    An, Liwei; Zhai, Ding; Dong, Jiuxiang; Zhang, Qingling

    2017-08-01

    This paper investigates the H∞ static output feedback (SOF) control problem for switched linear system under arbitrary switching, where the actuator failure models are considered to depend on switching signal. An active reliable control scheme is developed by combination of linear matrix inequality (LMI) method and adaptive mechanism. First, by exploiting variable substitution and Finsler's lemma, new LMI conditions are given for designing the SOF controller. Compared to the existing results, the proposed design conditions are more relaxed and can be applied to a wider class of no-fault linear systems. Then a novel adaptive mechanism is established, where the inverses of switched failure scaling factors are estimated online to accommodate the effects of actuator failure on systems. Two main difficulties arise: first is how to design the switched adaptive laws to prevent the missing of estimating information due to switching; second is how to construct a common Lyapunov function based on a switched estimate error term. It is shown that the new method can give less conservative results than that for the traditional control design with fixed gain matrices. Finally, simulation results on the HiMAT aircraft are given to show the effectiveness of the proposed approaches.

  14. Bilingual Language Switching: Production vs. Recognition

    Science.gov (United States)

    Mosca, Michela; de Bot, Kees

    2017-01-01

    This study aims at assessing how bilinguals select words in the appropriate language in production and recognition while minimizing interference from the non-appropriate language. Two prominent models are considered which assume that when one language is in use, the other is suppressed. The Inhibitory Control (IC) model suggests that, in both production and recognition, the amount of inhibition on the non-target language is greater for the stronger compared to the weaker language. In contrast, the Bilingual Interactive Activation (BIA) model proposes that, in language recognition, the amount of inhibition on the weaker language is stronger than otherwise. To investigate whether bilingual language production and recognition can be accounted for by a single model of bilingual processing, we tested a group of native speakers of Dutch (L1), advanced speakers of English (L2) in a bilingual recognition and production task. Specifically, language switching costs were measured while participants performed a lexical decision (recognition) and a picture naming (production) task involving language switching. Results suggest that while in language recognition the amount of inhibition applied to the non-appropriate language increases along with its dominance as predicted by the IC model, in production the amount of inhibition applied to the non-relevant language is not related to language dominance, but rather it may be modulated by speakers' unconscious strategies to foster the weaker language. This difference indicates that bilingual language recognition and production might rely on different processing mechanisms and cannot be accounted within one of the existing models of bilingual language processing. PMID:28638361

  15. Radiation-sensitive switching circuits

    Energy Technology Data Exchange (ETDEWEB)

    Moore, J.H.; Cockshott, C.P.

    1976-03-16

    A radiation-sensitive switching circuit has a light emitting diode which supplies light to a photo-transistor, the light being interrupted from time to time. When the photo-transistor is illuminated, current builds up and when this current reaches a predetermined value, a trigger circuit changes state. The peak output of the photo-transistor is measured and the trigger circuit is arranged to change state when the output of the device is a set proportion of the peak output, so as to allow for aging of the components. The circuit is designed to control the ignition system in an automobile engine.

  16. Radiation-sensitive switching circuits

    Energy Technology Data Exchange (ETDEWEB)

    Moore, J.H.; Cockshott, C.P.

    1976-03-16

    A radiation-sensitive switching circuit includes a light emitting diode which from time to time illuminates a photo-transistor, the photo-transistor serving when its output reaches a predetermined value to operate a trigger circuit. In order to allow for aging of the components, the current flow through the diode is increased when the output from the transistor falls below a known level. Conveniently, this is achieved by having a transistor in parallel with the diode, and turning the transistor off when the output from the phototransistor becomes too low. The circuit is designed to control the ignition system in an automobile engine.

  17. Room temperature resistive state switching with hysteresis in GdMnO3 thin film with low threshold voltage

    International Nuclear Information System (INIS)

    Nath, Rajib; Raychaudhuri, A. K.; Mukovskii, Ya. M.; Andreev, N.; Chichkov, Vladimir

    2014-01-01

    In this paper, we report a room temperature resistive state switching with hysteresis, in a thin film of GdMnO 3 grown on NdGaO 3 substrate. The switched states have a resistance ratio ≈10 3 . The switching is unipolar in nature, with a low set voltage <3 V, while the reset voltage <0.3 V. The switching occurs between a high resistance polaronic insulating state and a low resistance metallic state. The resistance state transition has been ascribed to an electronic mechanism that originates from co-existing phases (created by charge disproportionation) that can undergo a percolative transition enabled by the applied bias

  18. Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot.

    Science.gov (United States)

    Yamazaki, Shiro; Maeda, Keisuke; Sugimoto, Yoshiaki; Abe, Masayuki; Zobač, Vladimír; Pou, Pablo; Rodrigo, Lucia; Mutombo, Pingo; Pérez, Ruben; Jelínek, Pavel; Morita, Seizo

    2015-07-08

    We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.

  19. Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

    KAUST Repository

    Molinero, David G.; Luo, Xi; Shen, Chao; Palego, Cristiano; Hwang, James; Goldsmith, Charles L.

    2013-01-01

    This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.

  20. Resistive switching memories in MoS{sub 2} nanosphere assemblies

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Xiao-Yong, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn [School of Physics Science and Technology, Yangzhou University, Yangzhou 225002 (China); State Key Laboratory of Bioelectronics and School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Yin, Zong-You [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Xu, Chun-Xiang, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn; Dai, Jun [State Key Laboratory of Bioelectronics and School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Hu, Jing-Guo, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn [School of Physics Science and Technology, Yangzhou University, Yangzhou 225002 (China)

    2014-01-20

    A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS{sub 2} nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10{sup 4}), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.

  1. Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

    KAUST Repository

    Hota, M. K.

    2014-04-14

    We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.

  2. Multi-level switching in TiOx Fy film with nanoparticles

    International Nuclear Information System (INIS)

    Sun, Xiangyu; Wu, Chuangui; Shuai, Yao; Pan, Xinqiang; Luo, Wenbo; You, Tiangui; Du, Nan; Schmidt, Heidemarie

    2017-01-01

    A reliable bipolar resistive switching device was achieved with multi-level switching behavior in fluorine-doped titanium oxide (TiO x F y ) film. Different resistance states can be precisely controlled by different pulse voltages, which reveals the device’s high potential in neuromorphic research. The characteristics of I – V curves in each resistance state were analyzed. Nanoparticles were observed in the TiO x F y film by HR-TEM. The underlying physical mechanisms during resistance switching are discussed and a model of a meshy conducting path is proposed. (paper)

  3. Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

    KAUST Repository

    Molinero, David G.

    2013-03-01

    This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.

  4. Space-charge-mediated anomalous ferroelectric switching in P(VDF-TrEE) polymer films

    KAUST Repository

    Hu, Weijin

    2014-11-12

    We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current is revealed to be the dominant leakage mechanism in such organic ferroelectric devices, and electrostatic interactions due to space charges lead to the emergence of anomalous ferroelectric loops. The reliable control of ferroelectric switching in P(VDF-TrEE) copolymers opens doors toward engineering advanced organic memories with tailored switching characteristics.

  5. A cross-stacked plasmonic nanowire network for high-contrast femtosecond optical switching.

    Science.gov (United States)

    Lin, Yuanhai; Zhang, Xinping; Fang, Xiaohui; Liang, Shuyan

    2016-01-21

    We report an ultrafast optical switching device constructed by stacking two layers of gold nanowires into a perpendicularly crossed network, which works at a speed faster than 280 fs with an on/off modulation depth of about 22.4%. The two stacks play different roles in enhancing consistently the optical switching performance due to their different dependence on the polarization of optical electric fields. The cross-plasmon resonance based on the interaction between the perpendicularly stacked gold nanowires and its Fano-coupling with Rayleigh anomaly is the dominant mechanism for such a high-contrast optical switching device.

  6. Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

    Science.gov (United States)

    Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook

    2018-02-01

    In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.

  7. Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Aurelio, D.; Torres, L.; Finocchio, G.

    2009-01-01

    This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.

  8. Two-magnon bound state causes ultrafast thermally induced magnetisation switching

    Science.gov (United States)

    Barker, J.; Atxitia, U.; Ostler, T. A.; Hovorka, O.; Chubykalo-Fesenko, O.; Chantrell, R. W.

    2013-01-01

    There has been much interest recently in the discovery of thermally induced magnetisation switching using femtosecond laser excitation, where a ferrimagnetic system can be switched deterministically without an applied magnetic field. Experimental results suggest that the reversal occurs due to intrinsic material properties, but so far the microscopic mechanism responsible for reversal has not been identified. Using computational and analytic methods we show that the switching is caused by the excitation of two-magnon bound states, the properties of which are dependent on material factors. This discovery allows us to accurately predict the onset of switching and the identification of this mechanism will allow new classes of materials to be identified or designed for memory devices in the THz regime. PMID:24253110

  9. Know-How on design of switching regulator

    International Nuclear Information System (INIS)

    1985-08-01

    This book introduces switching regulator from base to application, which deals with fundamentals of switching regulator such as the reason of boom about switching regulator, understanding simple circuit without electric transformer and decision of circuit type with input voltage and output voltage, configuration and characteristic of switching regulator, a concrete design of switching regulator, pulse width control circuit and protection circuit, concrete circuit examples of switching power and the point of switching regulator.

  10. Improvement on Main/backup Controller Switching Device of the Nozzle Throat Area Control System for a Turbofan Aero Engine

    Science.gov (United States)

    Li, Jie; Duan, Minghu; Yan, Maode; Li, Gang; Li, Xiaohui

    2014-06-01

    A full authority digital electronic controller (FADEC) equipped with a full authority hydro-mechanical backup controller (FAHMBC) is adopted as the nozzle throat area control system (NTACS) of a turbofan aero engine. In order to ensure the switching reliability of the main/backup controller, the nozzle throat area control switching valve was improved from three-way convex desktop slide valve to six-way convex desktop slide valve. Simulation results show that, if malfunctions of FAEDC occur and abnormal signals are outputted from FADEC, NTACS will be seriously influenced by the main/backup controller switching in several working states, while NTACS will not be influenced by using the improved nozzle throat area control switching valve, thus the controller switching process will become safer and smoother and the working reliability of this turbofan aero engine is improved by the controller switching device improvement.

  11. AN ANALYTICAL STUDY OF SWITCHING TRACTION MOTORS

    Directory of Open Access Journals (Sweden)

    V. M. Bezruchenko

    2010-03-01

    Full Text Available The analytical study of switching of the tractive engines of electric locomotives is conducted. It is found that the obtained curves of change of current of the sections commuted correspond to the theory of average rectilinear switching. By means of the proposed method it is possible on the stage of design of tractive engines to forecast the quality of switching and to correct it timely.

  12. Monitoring Mellanox Infiniband SX6036 switches

    CERN Document Server

    Agapiou, Marinos

    2017-01-01

    The SX6036 switches addressed by my project, are part of a fully non-blocking fat-tree cluster consisting of 72 servers and 6 Mellanox SX6036 Infiniband switches. My project is about retrieving the appropriate metrics from the Infiniband switch cluster, ingesting the data to Collectd and after my data are being transfered to CERN Database, they are being visualized via Grafana Dashboards.

  13. Optical switches based on surface plasmons

    International Nuclear Information System (INIS)

    Chen Cong; Wang Pei; Yuan Guanghui; Wang Xiaolei; Min Changjun; Deng Yan; Lu Yonghua; Ming Hai

    2008-01-01

    Great attention is being paid to surface plasmons (SPs) because of their potential applications in sensors, data storage and bio-photonics. Recently, more and more optical switches based on surface plasmon effects have been demonstrated either by simulation or experimentally. This article describes the principles, advantages and disadvantages of various types of optical switches based on SPs, in particular the all-optical switches. (authors)

  14. A new switched power linac structure

    International Nuclear Information System (INIS)

    Villa, F.

    1989-03-01

    A new pulse power structure has been described that utilizes an easily accessible rectilinear switch. The new structure is more ''forgiving'' (as far as risetime is concerned) than the radial line transformer, and contains fewer switching structures/unit length. The combination of the new structure with the switch proposed seems to offer interesting possibilities for a future linear collider. 13 refs., 6 figs., 2 tabs

  15. Switching induced oscillations in the logistic map

    Energy Technology Data Exchange (ETDEWEB)

    Maier, Makisha P.S. [Department of Chemistry, Williams College, Williamstown, MA 01267 (United States); Peacock-Lopez, Enrique, E-mail: epeacock@williams.ed [Department of Chemistry, Williams College, Williamstown, MA 01267 (United States)

    2010-02-08

    In ecological modeling, seasonality can be represented as a switching between different environmental conditions. This switching strategy can be related to the so-called Parrondian games, where the alternation of two losing games yield a winning game. Hence we can consider two dynamics that, by themselves, yield undesirable behaviors, but when alternated yield a desirable oscillatory behavior. In this case, we also consider a noisy switching strategy and find that the desirable oscillatory behavior prevails.

  16. A magnetically switched kicker for proton extraction

    International Nuclear Information System (INIS)

    Dinkel, J.; Biggs, J.

    1989-03-01

    The application of magnetic current amplification and switching techniques to the generation of precise high current pulses for switching magnets is described. The square loop characteristic of Metglas tape wound cores at high excitation levels provides excellent switching characteristics for microsecond pulses. The rugged and passive nature of this type pulser makes it possible to locate the final stages of amplification at the load for maximum efficiency. 12 refs., 8 figs

  17. Bipolar resistive switching behaviour in Mn 0.03 Zn 0.97 O ...

    Indian Academy of Sciences (India)

    C o n v e r s e l y , t h e r a t i o i n t h e A g / M Z O / L Z M O / p ^+$-Si device began to decrease after 100 successive switching cycles. The LZMO/MZO interface could play an important role in the resistive switching behaviour of the devices. The dominant conduction mechanism of the two devices is charge-trap emission.

  18. A Survey on Modeling and Simulation of MEMS Switches and Its Application in Power Gating Techniques

    OpenAIRE

    Pramod Kumar M.P; A.S. Augustine Fletcher

    2014-01-01

    Large numbers of techniques have been developed to reduce the leakage power, including supply voltage scaling, varying threshold voltages, smaller logic banks, etc. Power gating is a technique which is used to reduce the static power when the sleep transistor is in off condition. Micro Electro mechanical System (MEMS) switches have properties that are very close to an ideal switch, with infinite off-resistance due to an air gap and low on-resistance due to the ohmic metal to m...

  19. Atomic battery with beam switching

    International Nuclear Information System (INIS)

    Edling, E.A.; McKenna, R.P.; Peterick, E.Th. Jr.; Trexler, F.D.

    1984-01-01

    An electric power generating apparatus that is powered primarily by the emission of electrically charged particles from radio-active materials enclosed in an evacuated vessel of glass or the like. An arrangement of reflecting electrodes causes a beam of particles to switch back and forth at a high frequency between two collecting electrodes that are connected to a resonating tuned primary circuit consisting of an inductor with resonating capacitor. The reflecting electrodes are energized in the proper phase relationship to the collecting electrodes to insure sustained oscillation by means of a secondary winding coupled inductively to the primary winding and connected to the reflecting electrodes. Power may be drawn from the circuit at a stepped down voltage from a power take-off winding that is coupled to the primary winding. The disclosure also describes a collecting electrode arrangement consisting of multiple spatially separated electrodes which together serve to capture a maximum of the available particle energy. A self-starting arrangement for start of oscillations is described. A specially adapted version of the invention utilizes two complementary beams of oppositely charged particles which are switched alternatingly between the collecting electrodes

  20. Atomic crystals resistive switching memory

    International Nuclear Information System (INIS)

    Liu Chunsen; Zhang David Wei; Zhou Peng

    2017-01-01

    Facing the growing data storage and computing demands, a high accessing speed memory with low power and non-volatile character is urgently needed. Resistive access random memory with 4F 2 cell size, switching in sub-nanosecond, cycling endurances of over 10 12 cycles, and information retention exceeding 10 years, is considered as promising next-generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory. (topical reviews)

  1. Stochastic multistep polarization switching in ferroelectrics

    Science.gov (United States)

    Genenko, Y. A.; Khachaturyan, R.; Schultheiß, J.; Ossipov, A.; Daniels, J. E.; Koruza, J.

    2018-04-01

    Consecutive stochastic 90° polarization switching events, clearly resolved in recent experiments, are described by a nucleation and growth multistep model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes possible consecutive 90°- and parallel 180° switching events. The model predicts the results of simultaneous time-resolved macroscopic measurements of polarization and strain, performed on a tetragonal Pb (Zr ,Ti ) O3 ceramic in a wide range of electric fields over a time domain of seven orders of magnitude. It allows the determination of the fractions of individual switching processes, their characteristic switching times, activation fields, and respective Avrami indices.

  2. The increased importance of sector switching

    DEFF Research Database (Denmark)

    Frederiksen, Anders; Hansen, Jesper Rosenberg

    2017-01-01

    Sector switching is an important phenomenon that casts light on public–private differences. Yet our knowledge about its prevalence and trends is limited. We study sector switching using unique Danish register-based employer–employee data covering more than 25 years. We find that sector switching...... constitutes 18.5% of all job-to-job mobility, and the trend is increasing both from public to private and from private to public. Sector switching is also generally increasing for middle managers, but for administrative professionals only the flows from private to public increase and for top managers only...... the flows from public to private increase....

  3. Wireless Nanoionic-Based Radio Frequency Switch

    Science.gov (United States)

    Nessel, James A. (Inventor); Miranda, Felix A (Inventor)

    2017-01-01

    A nanoionic switch connected to one or more rectenna modules is disclosed. The rectenna module is configured to receive a wireless signal and apply a first bias to change a state of the nanoionic switch from a first state to a second state. The rectenna module can receive a second wireless signal and apply a second bias to change the nanoionic switch from the second state back to the first state. The first bias is generally opposite of the first bias. The rectenna module accordingly permits operation of the nanoionic switch without onboard power.

  4. Low-Voltage Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Bidari, E.; Keskin, M.; Maloberti, F.

    1999-01-01

    Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

  5. Clocking Scheme for Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1998-01-01

    A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed.......A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed....

  6. Simplified design of switching power supplies

    CERN Document Server

    Lenk, John

    1995-01-01

    * Describes the operation of each circuit in detail * Examines a wide selection of external components that modify the IC package characteristics * Provides hands-on, essential information for designing a switching power supply Simplified Design of Switching Power Supplies is an all-inclusive, one-stop guide to switching power-supply design. Step-by-step instructions and diagrams render this book essential for the student and the experimenter, as well as the design professional. Simplified Design of Switching Power Supplies concentrates on the use of IC regulators. All popular forms of swit

  7. Conceptual design of multiple parallel switching controller

    International Nuclear Information System (INIS)

    Ugolini, D.; Yoshikawa, S.; Ozawa, K.

    1996-01-01

    This paper discusses the conceptual design and the development of a preliminary model of a multiple parallel switching (MPS) controller. The introduction of several advanced controllers has widened and improved the control capability of nonlinear dynamical systems. However, it is not possible to uniquely define a controller that always outperforms the others, and, in many situations, the controller providing the best control action depends on the operating conditions and on the intrinsic properties and behavior of the controlled dynamical system. The desire to combine the control action of several controllers with the purpose to continuously attain the best control action has motivated the development of the MPS controller. The MPS controller consists of a number of single controllers acting in parallel and of an artificial intelligence (AI) based selecting mechanism. The AI selecting mechanism analyzes the output of each controller and implements the one providing the best control performance. An inherent property of the MPS controller is the possibility to discard unreliable controllers while still being able to perform the control action. To demonstrate the feasibility and the capability of the MPS controller the simulation of the on-line operation control of a fast breeder reactor (FBR) evaporator is presented. (author)

  8. Demonstration of Ultra-Fast Switching in Nano metallic Resistive Switching Memory Devices

    International Nuclear Information System (INIS)

    Yang, Y.

    2016-01-01

    Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nano metallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nano metallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

  9. Strategy switching in the stabilization of unstable dynamics.

    Directory of Open Access Journals (Sweden)

    Jacopo Zenzeri

    Full Text Available In order to understand mechanisms of strategy switching in the stabilization of unstable dynamics, this work investigates how human subjects learn to become skilled users of an underactuated bimanual tool in an unstable environment. The tool, which consists of a mass and two hand-held non-linear springs, is affected by a saddle-like force-field. The non-linearity of the springs allows the users to determine size and orientation of the tool stiffness ellipse, by using different patterns of bimanual coordination: minimal stiffness occurs when the two spring terminals are aligned and stiffness size grows by stretching them apart. Tool parameters were set such that minimal stiffness is insufficient to provide stable equilibrium whereas asymptotic stability can be achieved with sufficient stretching, although at the expense of greater effort. As a consequence, tool users have two possible strategies for stabilizing the mass in different regions of the workspace: 1 high stiffness feedforward strategy, aiming at asymptotic stability and 2 low stiffness positional feedback strategy aiming at bounded stability. The tool was simulated by a bimanual haptic robot with direct torque control of the motors. In a previous study we analyzed the behavior of naïve users and we found that they spontaneously clustered into two groups of approximately equal size. In this study we trained subjects to become expert users of both strategies in a discrete reaching task. Then we tested generalization capabilities and mechanism of strategy-switching by means of stabilization tasks which consist of tracking moving targets in the workspace. The uniqueness of the experimental setup is that it addresses the general problem of strategy-switching in an unstable environment, suggesting that complex behaviors cannot be explained in terms of a global optimization criterion but rather require the ability to switch between different sub-optimal mechanisms.

  10. The stochastic behavior of a molecular switching circuit with feedback

    Directory of Open Access Journals (Sweden)

    Smith Eric

    2007-05-01

    Full Text Available Abstract Background Using a statistical physics approach, we study the stochastic switching behavior of a model circuit of multisite phosphorylation and dephosphorylation with feedback. The circuit consists of a kinase and phosphatase acting on multiple sites of a substrate that, contingent on its modification state, catalyzes its own phosphorylation and, in a symmetric scenario, dephosphorylation. The symmetric case is viewed as a cartoon of conflicting feedback that could result from antagonistic pathways impinging on the state of a shared component. Results Multisite phosphorylation is sufficient for bistable behavior under feedback even when catalysis is linear in substrate concentration, which is the case we consider. We compute the phase diagram, fluctuation spectrum and large-deviation properties related to switch memory within a statistical mechanics framework. Bistability occurs as either a first-order or second-order non-equilibrium phase transition, depending on the network symmetries and the ratio of phosphatase to kinase numbers. In the second-order case, the circuit never leaves the bistable regime upon increasing the number of substrate molecules at constant kinase to phosphatase ratio. Conclusion The number of substrate molecules is a key parameter controlling both the onset of the bistable regime, fluctuation intensity, and the residence time in a switched state. The relevance of the concept of memory depends on the degree of switch symmetry, as memory presupposes information to be remembered, which is highest for equal residence times in the switched states. Reviewers This article was reviewed by Artem Novozhilov (nominated by Eugene Koonin, Sergei Maslov, and Ned Wingreen.

  11. Resistive switching in TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin

    2011-10-26

    The continuing improved performance of the digital electronic devices requires new memory technologies which should be inexpensively fabricated for higher integration capacity, faster operation, and low power consumption. Resistive random access memory has great potential to become the front runner as the non volatile memory technology. The resistance states stored in such cell can remain for long time and can be read out none-destructively by a very small electrical pulse. In this work the typically two terminal memory cells containing a thin TiO{sub 2} layer are studied. Polycrystalline TiO{sub 2} thin films are deposited with atomic layer deposition and magnetron reactive sputtering processes, which are both physically and electrically characterized. The resistive switching cells are constructed in a metal/TiO{sub 2}/metal structure. Electroforming process initiate the cell from the beginning good insulator to a real memory cell to program the resistive states. Multilevel resistive bipolar switching controlled by current compliance is the common characteristic observed in these cells, which is potentially to be used as so called multi-bit memory cells to improve the memory capacity. With different top electrodes of Pt, Cu, Ag the resistive switching behaviors are studied. The switching behaviors are different depending on the top metal such as the minimum current compliance, the endurance of the programmed resistance states and the morphology change during the switching. The temperature dependence of different resistance states are investigated. A reduction of the activation energy and their possible conduction mechanisms is discussed on the base of the basic current conduction models. It is found that the resistance state transfers from semiconductor to metallic property with the reducing resistances. The calculated temperature coefficients of their metallic states on the Cu/TiO{sub 2}/Pt and Ag/TiO{sub 2}/Pt are very close to the reported literature data

  12. Optimal control of switching time in switched stochastic systems with multi-switching times and different costs

    Science.gov (United States)

    Liu, Xiaomei; Li, Shengtao; Zhang, Kanjian

    2017-08-01

    In this paper, we solve an optimal control problem for a class of time-invariant switched stochastic systems with multi-switching times, where the objective is to minimise a cost functional with different costs defined on the states. In particular, we focus on problems in which a pre-specified sequence of active subsystems is given and the switching times are the only control variables. Based on the calculus of variation, we derive the gradient of the cost functional with respect to the switching times on an especially simple form, which can be directly used in gradient descent algorithms to locate the optimal switching instants. Finally, a numerical example is given, highlighting the validity of the proposed methodology.

  13. Sequential Effects in Deduction: Cost of Inference Switch

    Science.gov (United States)

    Milan, Emilio G.; Moreno-Rios, Sergio; Espino, Orlando; Santamaria, Carlos; Gonzalez-Hernandez, Antonio

    2010-01-01

    The task-switch paradigm has helped psychologists gain insight into the processes involved in changing from one activity to another. The literature has yielded consistent results about switch cost reconfiguration (abrupt offset in regular task-switch vs. gradual reduction in random task-switch; endogenous and exogenous components of switch cost;…

  14. The Wnt Transcriptional Switch: TLE Removal or Inactivation?

    Science.gov (United States)

    Ramakrishnan, Aravinda-Bharathi; Sinha, Abhishek; Fan, Vinson B; Cadigan, Ken M

    2018-02-01

    Many targets of the Wnt/β-catenin signaling pathway are regulated by TCF transcription factors, which play important roles in animal development, stem cell biology, and oncogenesis. TCFs can regulate Wnt targets through a "transcriptional switch," repressing gene expression in unstimulated cells and promoting transcription upon Wnt signaling. However, it is not clear whether this switch mechanism is a general feature of Wnt gene regulation or limited to a subset of Wnt targets. Co-repressors of the TLE family are known to contribute to the repression of Wnt targets in the absence of signaling, but how they are inactivated or displaced by Wnt signaling is poorly understood. In this mini-review, we discuss several recent reports that address the prevalence and molecular mechanisms of the Wnt transcription switch, including the finding of Wnt-dependent ubiquitination/inactivation of TLEs. Together, these findings highlight the growing complexity of the regulation of gene expression by the Wnt pathway. © 2017 WILEY Periodicals, Inc.

  15. Ikaros controls isotype selection during immunoglobulin class switch recombination.

    Science.gov (United States)

    Sellars, MacLean; Reina-San-Martin, Bernardo; Kastner, Philippe; Chan, Susan

    2009-05-11

    Class switch recombination (CSR) allows the humoral immune response to exploit different effector pathways through specific secondary antibody isotypes. However, the molecular mechanisms and factors that control immunoglobulin (Ig) isotype choice for CSR are unclear. We report that deficiency for the Ikaros transcription factor results in increased and ectopic CSR to IgG(2b) and IgG(2a), and reduced CSR to all other isotypes, regardless of stimulation. Ikaros suppresses active chromatin marks, transcription, and activation-induced cytidine deaminase (AID) accessibility at the gamma2b and gamma2a genes to inhibit class switching to these isotypes. Further, Ikaros directly regulates isotype gene transcription as it directly binds the Igh 3' enhancer and interacts with isotype gene promoters. Finally, Ikaros-mediated repression of gamma2b and gamma2a transcription promotes switching to other isotype genes by allowing them to compete for AID-mediated recombination at the single-cell level. Thus, our results reveal transcriptional competition between constant region genes in individual cells to be a critical and general mechanism for isotype specification during CSR. We show that Ikaros is a master regulator of this competition.

  16. Coevolution between positive reciprocity, punishment, and partner switching in repeated interactions.

    Science.gov (United States)

    Wubs, Matthias; Bshary, Redouan; Lehmann, Laurent

    2016-06-15

    Cooperation based on mutual investments can occur between unrelated individuals when they are engaged in repeated interactions. Individuals then need to use a conditional strategy to deter their interaction partners from defecting. Responding to defection such that the future payoff of a defector is reduced relative to cooperating with it is called a partner control mechanism. Three main partner control mechanisms are (i) to switch from cooperation to defection when being defected ('positive reciprocity'), (ii) to actively reduce the payoff of a defecting partner ('punishment'), or (iii) to stop interacting and switch partner ('partner switching'). However, such mechanisms to stabilize cooperation are often studied in isolation from each other. In order to better understand the conditions under which each partner control mechanism tends to be favoured by selection, we here analyse by way of individual-based simulations the coevolution between positive reciprocity, punishment, and partner switching. We show that random interactions in an unstructured population and a high number of rounds increase the likelihood that selection favours partner switching. In contrast, interactions localized in small groups (without genetic structure) increase the likelihood that selection favours punishment and/or positive reciprocity. This study thus highlights the importance of comparing different control mechanisms for cooperation under different conditions. © 2016 The Author(s).

  17. Chiroptical Molecular Switches 1; Principles and Syntheses.

    NARCIS (Netherlands)

    Lange, Ben de; Jager, Wolter F.; Feringa, Bernard

    1992-01-01

    The concept and the synthesis of the basic molecules for a chiroptical molecular switch are described. This molecular switch is based on photochemical interconversion of two bistable forms of chiral sterically overcrowded olefins. A large variety of these alkenes with different properties have been

  18. Novel RF-MEMS capacitive switching structures

    NARCIS (Netherlands)

    Rottenberg, X.; Jansen, Henricus V.; Fiorini, P.; De Raedt, W.; Tilmans, H.A.C.

    2002-01-01

    This paper reports on novel RF-MEMS capacitive switching devices implementing an electrically floating metal layer covering the dielectric to ensure intimate contact with the bridge in the down state. This results in an optimal switch down capacitance and allows optimisation of the down/up

  19. High-explosive driven crowbar switch

    International Nuclear Information System (INIS)

    Dike, R.S.; Kewish, R.W. Jr.

    1976-01-01

    The disclosure relates to a compact explosive driven switch for use as a low resistance, low inductance crowbar switch. A high-explosive charge extrudes a deformable conductive metallic plate through a polyethylene insulating layer to achieve a hard current contact with a supportive annular conductor

  20. Simulation of linear Switched Reluctance Motor drives

    OpenAIRE

    Garcia Amoros, Jordi; Blanqué Molina, Balduino; Andrada Gascón, Pedro

    2011-01-01

    This paper presents a simulation model of linear switched reluctance motor drives. A Matlab-Simulink environment coupled with finite element analysis is used to perform the simulations. Experimental and simulation results for a double sided linear switched motor drive prototype are reported and compared to verify the simulation model.

  1. Photonic crystal Fano lasers and Fano switches

    DEFF Research Database (Denmark)

    Mørk, Jesper; Yu, Yi; Bekele, Dagmawi Alemayehu

    2017-01-01

    We show that Fano resonances can be realized in photonic crystal membrane structures by coupling line-defect waveguides and point-defect nanocavities. The Fano resonance can be exploited to realize optical switches with very small switching energy, as well as Fano lasers, that can generate short...

  2. Scalable optical switches for computing applications

    NARCIS (Netherlands)

    White, I.H.; Aw, E.T.; Williams, K.A.; Wang, Haibo; Wonfor, A.; Penty, R.V.

    2009-01-01

    A scalable photonic interconnection network architecture is proposed whereby a Clos network is populated with broadcast-and-select stages. This enables the efficient exploitation of an emerging class of photonic integrated switch fabric. A low distortion space switch technology based on recently

  3. Tutorial: Integrated-photonic switching structures

    Science.gov (United States)

    Soref, Richard

    2018-02-01

    Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable "mesh" switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ˜1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

  4. Proceedings of the switched power workshop

    International Nuclear Information System (INIS)

    Fernow, R.C.

    1988-01-01

    These proceedings contain most of the presentations given at a workshop on the current state of research in techniques for switched power acceleration. The proceedings are divided, as was the workshop itself, into two parts. Part 1, contains the latest results from a number of groups active in switched power research. The major topic here is a method for switching externally supplied power onto a transmission line. Advocates for vacuum photodiode switching, solid state switching, gas switching, and synthetic pulse generation are all presented. Other important areas of research described in this section concern: external electrical and laser pulsing systems; the properties of the created electromagnetic pulse; structures used for transporting the electromagnetic pulse to the region where the electron beam is located; and possible applications. Part 2 of the proceedings considers the problem of designing a high brightness electron gun using switched power as the power source. This is an important first step in demonstrating the usefulness of switched power techniques for accelerator physics. In addition such a gun could have immediate practical importance for advanced acceleration studies since the brightness could exceed that of present sources by several orders of magnitude. I would like to take this opportunity to thank Kathleen Tuohy and Patricia Tuttle for their assistance in organizing and running the workshop. Their tireless efforts contribute greatly to a very productive meeting

  5. Unity power factor switching regulator

    Science.gov (United States)

    Rippel, Wally E. (Inventor)

    1983-01-01

    A single or multiphase boost chopper regulator operating with unity power factor, for use such as to charge a battery is comprised of a power section for converting single or multiphase line energy into recharge energy including a rectifier (10), one inductor (L.sub.1) and one chopper (Q.sub.1) for each chopper phase for presenting a load (battery) with a current output, and duty cycle control means (16) for each chopper to control the average inductor current over each period of the chopper, and a sensing and control section including means (20) for sensing at least one load parameter, means (22) for producing a current command signal as a function of said parameter, means (26) for producing a feedback signal as a function of said current command signal and the average rectifier voltage output over each period of the chopper, means (28) for sensing current through said inductor, means (18) for comparing said feedback signal with said sensed current to produce, in response to a difference, a control signal applied to the duty cycle control means, whereby the average inductor current is proportionate to the average rectifier voltage output over each period of the chopper, and instantaneous line current is thereby maintained proportionate to the instantaneous line voltage, thus achieving a unity power factor. The boost chopper is comprised of a plurality of converters connected in parallel and operated in staggered phase. For optimal harmonic suppression, the duty cycles of the switching converters are evenly spaced, and by negative coupling between pairs 180.degree. out-of-phase, peak currents through the switches can be reduced while reducing the inductor size and mass.

  6. On-Off Switches for Secondary Cell Wall Biosynthesis

    Institute of Scientific and Technical Information of China (English)

    Huan-Zhong Wang; Richard A.Dixon

    2012-01-01

    Secondary cell walls provide plants with rigidity and strength to support their body weight and ensure water and nutrient transport.They also provide textiles,timber,and potentially second-generation biofuels for human use.Genes responsible for synthesis of the different cell wall components,namely cellulose,hemicelluloses,and lignin,are coordinately expressed and under transcriptional regulation.In the past several years,cell wall-related NAC and MYB transcription factors have been intensively investigated in different species and shown to be master switches of secondary cell wall biosynthesis.Positive and negative regulators,which function upstream of NAC master switches,have also been identified in different plant tissues.Further elucidation of the regulatory mechanisms of cell wall synthesis will facilitate the engineering of plant feedstocks suitable for biofuel production.

  7. Ferroelastic domain switching fatigue in lead zirconate titanate ceramics

    International Nuclear Information System (INIS)

    Pojprapai, Soodkhet; Jones, Jacob L.; Studer, Andrew J.; Russell, Jennifer; Valanoor, Nagarajan; Hoffman, Mark

    2008-01-01

    The influence of the frequency and amplitude of cyclic mechanical loading on soft, tetragonal lead zirconate titanate (PZT) ceramics was investigated via neutron diffraction. Intensity change in the {2 0 0} reflections provided quantitative measurements of domain switching behavior, domain texture and the strain resulting from domain switching. The results are explained using a viscoelasticity model. It was found that the magnitude of applied stress affects the level of strain accumulated, while its frequency affects the time taken for the strain to reach saturation. Furthermore, markedly different behaviors are exhibited by poled and unpoled samples. For samples loaded under identical conditions, the frequency effect is more pronounced in unpoled samples and the accumulated ferroelastic strain is greater in poled samples

  8. Arc detector system for extraction switches in LHC CERN

    CERN Document Server

    Dahlerup-Petersen, K; Kuper, E; Ovchar, V; Zverev, S

    2006-01-01

    The opening switches, which will be used in case of quenches or other failures in CERN’s future LHC collider to extract the large amounts of energy stored in the magnetic field of the superconducting chains of main dipoles (8 chains with 1350 MJ each) and main quadrupoles (16 chains with about 24 MJ each) consist of an array of series/parallel connected, electro-mechanical D.C. breakers, specifically designed for this particular application. During the opening process the magnet excitation current is transferred from the cluster of breakers to extraction resistors for rapid de-excitation of the magnet chain. An arc detector has been developed in order to facilitate the determination of the need for maintenance interventions on the switches. The paper describes the arc detector and highlight results from operation of the detector with a LHC pilot extraction...

  9. Axis-switching of a micro-jet

    Science.gov (United States)

    Cabaleiro, Juan Martin; Aider, Jean-Luc

    2014-03-01

    In this study, it is shown that free microjets can undergo complex transitions similar to large-scale free jets despite relatively low Reynolds numbers. Using an original experimental method allowing for the 3D reconstruction of the instantaneous spatial organization of the microjet, the axis-switching of a micro-jet is observed for the first time. This is the first experimental evidence of such complex phenomena for free micro-jets. Combining these experimental results with Direct Numerical Simulations it is shown that the mechanism responsible for the axis-switching is the deformation of a micro-vortex ring due to induction by the corner vortices, as it occurs in large scale non-circular jets.

  10. Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

    International Nuclear Information System (INIS)

    Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

    2016-01-01

    In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge 2 Sb 2 Te 5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters

  11. Functional brain and age-related changes associated with congruency in task switching

    Science.gov (United States)

    Eich, Teal S.; Parker, David; Liu, Dan; Oh, Hwamee; Razlighi, Qolamreza; Gazes, Yunglin; Habeck, Christian; Stern, Yaakov

    2016-01-01

    Alternating between completing two simple tasks, as opposed to completing only one task, has been shown to produce costs to performance and changes to neural patterns of activity, effects which are augmented in old age. Cognitive conflict may arise from factors other than switching tasks, however. Sensorimotor congruency (whether stimulus-response mappings are the same or different for the two tasks) has been shown to behaviorally moderate switch costs in older, but not younger adults. In the current study, we used fMRI to investigate the neurobiological mechanisms of response-conflict congruency effects within a task switching paradigm in older (N=75) and younger (N=62) adults. Behaviorally, incongruency moderated age-related differences in switch costs. Neurally, switch costs were associated with greater activation in the dorsal attention network for older relative to younger adults. We also found that older adults recruited an additional set of brain areas in the ventral attention network to a greater extent than did younger adults to resolve congruency-related response-conflict. These results suggest both a network and an age-based dissociation between congruency and switch costs in task switching. PMID:27520472

  12. Within-item strategy switching in arithmetic: a comparative study in children

    Science.gov (United States)

    Ardiale, Eléonore; Lemaire, Patrick

    2013-01-01

    The present study aimed at determining whether (1) children were able to interrupt a strategy execution to switch and choose another better strategy, and (2) their ability to switch strategy within-item improved with age. Third, fifth, and seventh graders performed a computational estimation task in which they had to provide the better estimates to two-digit addition problems (e.g., 32 + 54) while using the rounding-down (e.g., 30 + 50) or the rounding-up strategy (e.g., 40 + 60). After having executing the cued strategy (e.g., 30 + 50) during 1,000 ms, participants were given the opportunity to switch to another better strategy (e.g., 40 + 60) or to repeat the same strategy (e.g., 30 + 50). The results showed that children switched strategies within items, and were able to switch more often when the addition problems were cued with the poorer strategy (e.g., 40 + 60 for 32 + 54) than when cued with the better strategy (e.g., 30 + 50). As they grew up, children based their decisions to switch strategies more often on whether the 1,000-ms strategy execution concerned the better strategy or strategy difficulty (i.e., the rounding-up strategy). These findings have important implications to further understand mechanisms underlying within-item strategy switching as well as strategic variations in children. PMID:24368906

  13. Mode switching control of dual-evaporator air-conditioning systems

    International Nuclear Information System (INIS)

    Lin, J.-L.; Yeh, T.-J.

    2009-01-01

    Modern air-conditioners incorporate variable-speed compressors and variable-opening expansion valves as the actuators for improving cooling performance and energy efficiency. These actuators have to be properly feedback-controlled; otherwise the systems may exhibit even poorer performance than the conventional machines which use fixed-speed compressors and mechanical expansion valves. Particularly for an air-conditioner with multiple evaporators, there are occasions that the machine is operated in a mode that only selected evaporator(s) is(are) turned on, and switching(s) between modes occurs(occur) during the control process. In this case, one needs to have more carefully designed control and switching strategies to ensure the system performance. In this paper, a framework for mode switching control of the dual-evaporator air-conditioning (DEAC) system is proposed. The framework is basically an integration of a controller and a dynamic compensator. The controller, which possesses the flow-distribution capability and assumes both evaporators are on throughout the control process, is intended to provide nominal performance. While mode switching is achieved by varying the reference settings in the controller, the dynamic compensator is used to improve the transient responses immediately after the switching. Experiments indicate that the proposed framework can achieve satisfactory indoor temperature regulation and provide bumpless switching between different modes of operation.

  14. Some studies on the deformation of the membrane in an RF MEMS switch

    NARCIS (Netherlands)

    Ambati, Vijaya Raghav; Asheim, Andreas; van den Berg, Jan Bouwe; van Gennip, Yves; Gerasimov, Tymofiy; Hlod, Andriy; Planqué, Bob; van der Schans, Martin; van der Stelt, Sjors; Vargas Rivera, Michelangelo; Vondenhoff, Erwin; Bokhove, Onno; Hurink, Johann; Meinsma, Gjerrit; Stolk, Chris; Vellekoop, Michel

    2008-01-01

    Radio Frequency (RF) switches of Micro Electro Mechanical Systems (MEMS) are appealing to the mobile industry because of their energy efficiency and ability to accommodate more frequency bands. However, the electromechanical coupling of the electrical circuit to the mechanical components in RF MEMS

  15. Switched-capacitor isolated LED driver

    Science.gov (United States)

    Sanders, Seth R.; Kline, Mitchell

    2016-03-22

    A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

  16. Seismic switch for strong motion measurement

    Science.gov (United States)

    Harben, P.E.; Rodgers, P.W.; Ewert, D.W.

    1995-05-30

    A seismic switching device is described that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period. 11 figs.

  17. Passively-switched energy harvester for increased operational range

    International Nuclear Information System (INIS)

    Liu, Tian; Livermore, Carol; Pierre, Ryan St

    2014-01-01

    This paper presents modeling and experimental validation of a new type of vibrational energy harvester that passively switches between two dynamical modes of operation to expand the range of driving frequencies and accelerations over which the harvester effectively extracts power. In both modes, a driving beam with a low resonant frequency couples into ambient vibrations and transfers their energy to a generating beam that has a higher resonant frequency. The generating beam converts the mechanical power into electrical power. In coupled-motion mode, the driving beam bounces off the generating beam. In plucked mode, the driving beam deflects the generating beam until the driving beam passes from above the generating beam to below it or vice versa. Analytical system models are implemented numerically in the time domain for driving frequencies of 3 Hz to 27 Hz and accelerations from 0.1 g to 2.6 g, and both system dynamics and output power are predicted. A corresponding switched-dynamics harvester is tested experimentally, and its voltage, power, and dynamics are recorded. In both models and experiments, coupled-motion harvesting is observed at lower accelerations, whereas plucked harvesting and/or mixed mode harvesting are observed at higher accelerations. As expected, plucked harvesting outputs greater power than coupled-motion harvesting in both simulations and experiments. The predicted (1.8 mW) and measured (1.56 mW) maximum average power levels are similar under measured conditions at 0.5 g. When the system switches to dynamics that are characteristic of higher frequencies, the difference between predicted and measured power levels is more pronounced due to non-ideal mechanical interaction between the beams’ tips. Despite the beams’ non-ideal interactions, switched-dynamics operation increases the harvester’s operating range. (paper)

  18. Intentional preparation of auditory attention-switches: Explicit cueing and sequential switch-predictability.

    Science.gov (United States)

    Seibold, Julia C; Nolden, Sophie; Oberem, Josefa; Fels, Janina; Koch, Iring

    2018-06-01

    In an auditory attention-switching paradigm, participants heard two simultaneously spoken number-words, each presented to one ear, and decided whether the target number was smaller or larger than 5 by pressing a left or right key. An instructional cue in each trial indicated which feature had to be used to identify the target number (e.g., female voice). Auditory attention-switch costs were found when this feature changed compared to when it repeated in two consecutive trials. Earlier studies employing this paradigm showed mixed results when they examined whether such cued auditory attention-switches can be prepared actively during the cue-stimulus interval. This study systematically assessed which preconditions are necessary for the advance preparation of auditory attention-switches. Three experiments were conducted that controlled for cue-repetition benefits, modality switches between cue and stimuli, as well as for predictability of the switch-sequence. Only in the third experiment, in which predictability for an attention-switch was maximal due to a pre-instructed switch-sequence and predictable stimulus onsets, active switch-specific preparation was found. These results suggest that the cognitive system can prepare auditory attention-switches, and this preparation seems to be triggered primarily by the memorised switching-sequence and valid expectations about the time of target onset.

  19. Contraceptive method switching in the United States.

    Science.gov (United States)

    Grady, William R; Billy, John O G; Klepinger, Daniel H

    2002-01-01

    Switching among contraceptive method types is the primary determinant of the prevalence of use of specific contraceptive methods, and it has direct implications for women's ability to avoid unintended pregnancies. Yet, method switching among U.S. women has received little attention from researchers. Data from the 1995 National Survey of Family Growth were used to construct multiple-decrement life tables to explore the gross switching rates of married and unmarried women. Within each group, discrete-time hazard models were estimated to determine how women's characteristics affect their switching behavior. Overall rates of method switching are high among both married and unmarried women (40% and 61%, respectively). Married women's two-year switching rates vary from 30% among women who use the implant, injectable, IUD or other reversible methods to 43% among nonusers, while unmarried women's rates vary from 33% among women who use the implant, injectable or IUD to 70% among nonusers. Multivariate analyses of method switching according to women's characteristics indicate that among married women, women without children are less likely than other women to adopt sterilization or a long-term reversible contraceptive (the implant, injectable or IUD). Older married women have a higher rate than their younger counterparts of switching to sterilization, but are also more likely to continue using no method. Among unmarried women, younger and more highly educated women have high rates of switching to the condom and to dual methods. Women's method switching decisions may be driven primarily by concerns related to level and duration of contraceptive effectiveness, health risks associated with contraceptive use and, among single women, sexually transmitted disease prevention.

  20. Development of the switching components for ZT-40

    International Nuclear Information System (INIS)

    Melton, J.G.; Dike, R.S.; Hanks, K.W.; Nunnally, W.C.

    1977-01-01

    Switching of the main capacitor banks for ZT-40 will be accomplished by spark gap switches. Initially, there will be 576 start switches and 288 crowbar switches. A development program is under way to develop three switches; (1) a versatile start switch, which can be used for both the I/sub z/ and the I/sub theta/ capacitor banks, with a wide operating voltage range, (2) a crowbar switch which is capable of crowbarring the circuit without the power crowbar bank, and (3) a power crowbar switch, which can handle 50 to 100 coulombs, so that a large number of crowbar switches will not be required when the power crowbar circuit is added. The problems with the start switches and the first crowbar switch have been solved, or alleviated. The development of a power crowbar switch has just begun

  1. Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

    Science.gov (United States)

    Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

    2014-12-01

    Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

  2. Switching speeds in NCAP displays: dependence on collection angle and wavelength

    Science.gov (United States)

    Reamey, Robert H.; Montoya, Wayne; Wartenberg, Mark

    1991-06-01

    The on and off switching speeds of nematic droplet-polymer films (NCAP) are shown to depend on the collection angle (f/#) and the wavelength of the light used in the measurement. Conventional twisted nematic liquid crystal displays have switching speeds which depend little on these factors. The switching speed dependence on collection angle (f/#) and wavelength for nematic droplet-polymer films is inherent to the mechanism by which light is modulated in these films. This mechanism is the scattering of light by the nematic droplets. The on times become faster and the off times become slower as the collection angle of detection is increased. The overall change in switching speed can be large. Greater than 100X changes in off time have been observed. As the wavelength of the light used to interrogate the sample is increased (blue yields green yields red) the on times become faster and the off times become slower. This dependence of switching speed on wavelength is apparent at all collection angles. An awareness of these effects is necessary when developing nematic droplet-polymer films for display applications and when comparing switching speed data from different sources.

  3. Evolutionary prisoner's dilemma games on the network with punishment and opportunistic partner switching

    Science.gov (United States)

    Takesue, H.

    2018-02-01

    Punishment and partner switching are two well-studied mechanisms that support the evolution of cooperation. Observation of human behaviour suggests that the extent to which punishment is adopted depends on the usage of alternative mechanisms, including partner switching. In this study, we investigate the combined effect of punishment and partner switching in evolutionary prisoner's dilemma games conducted on a network. In the model, agents are located on the network and participate in the prisoner's dilemma games with punishment. In addition, they can opportunistically switch interaction partners to improve their payoff. Our Monte Carlo simulation showed that a large frequency of punishers is required to suppress defectors when the frequency of partner switching is low. In contrast, cooperation is the most abundant strategy when the frequency of partner switching is high regardless of the strength of punishment. Interestingly, cooperators become abundant not because they avoid the cost of inflicting punishment and earn a larger average payoff per game but rather because they have more numerous opportunities to be referred to as a role agent by defectors. Our results imply that the fluidity of social relationships has a profound effect on the adopted strategy in maintaining cooperation.

  4. A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.

    Science.gov (United States)

    Dong, Kaichen; Choe, Hwan Sung; Wang, Xi; Liu, Huili; Saha, Bivas; Ko, Changhyun; Deng, Yang; Tom, Kyle B; Lou, Shuai; Wang, Letian; Grigoropoulos, Costas P; You, Zheng; Yao, Jie; Wu, Junqiao

    2018-04-01

    Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳10 6 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO 2 ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. The combination of positive and negative feedback loops confers exquisite flexibility to biochemical switches

    International Nuclear Information System (INIS)

    Pfeuty, Benjamin; Kaneko, Kunihiko

    2009-01-01

    A wide range of cellular processes require molecular regulatory pathways to convert a graded signal into a discrete response. One prevalent switching mechanism relies on the coexistence of two stable states (bistability) caused by positive feedback regulations. Intriguingly, positive feedback is often supplemented with negative feedback, raising the question of whether and how these two types of feedback can cooperate to control discrete cellular responses. To address this issue, we formulate a canonical model of a protein–protein interaction network and analyze the dynamics of a prototypical two-component circuit. The appropriate combination of negative and positive feedback loops can bring a bistable circuit close to the oscillatory regime. Notably, sharply activated negative feedback can give rise to a bistable regime wherein two stable fixed points coexist and may collide pairwise with two saddle points. This specific type of bistability is found to allow for separate and flexible control of switch-on and switch-off events, for example (i) to combine fast and reversible transitions, (ii) to enable transient switching responses and (iii) to display tunable noise-induced transition rates. Finally, we discuss the relevance of such bistable switching behavior, and the circuit topologies considered, to specific biological processes such as adaptive metabolic responses, stochastic fate decisions and cell-cycle transitions. Taken together, our results suggest an efficient mechanism by which positive and negative feedback loops cooperate to drive the flexible and multifaceted switching behaviors arising in biological systems

  6. Call for Papers: Photonics in Switching

    Science.gov (United States)

    Wosinska, Lena; Glick, Madeleine

    2006-04-01

    Call for Papers: Photonics in Switching Guest Editors: Lena Wosinska, Royal Institute of Technology (KTH) / ICT Sweden Madeleine Glick, Intel Research, Cambridge, UK Technologies based on DWDM systems allow data transmission with bit rates of Tbit/s on a single fiber. To facilitate this enormous transmission volume, high-capacity and high-speed network nodes become inevitable in the optical network. Wideband switching, WDM switching, optical burst switching (OBS), and optical packet switching (OPS) are promising technologies for harnessing the bandwidth of WDM optical fiber networks in a highly flexible and efficient manner. As a number of key optical component technologies approach maturity, photonics in switching is becoming an increasingly attractive and practical solution for the next-generation of optical networks. The scope of this special issue is focused on the technology and architecture of optical switching nodes, including the architectural and algorithmic aspects of high-speed optical networks. Scope of Submission The scope of the papers includes, but is not limited to, the following topics: WDM node architectures Novel device technologies enabling photonics in switching, such as optical switch fabrics, optical memory, and wavelength conversion Routing protocols WDM switching and routing Quality of service Performance measurement and evaluation Next-generation optical networks: architecture, signaling, and control Traffic measurement and field trials Optical burst and packet switching OBS/OPS node architectures Burst/Packet scheduling and routing algorithms Contention resolution/avoidance strategies Services and applications for OBS/OPS (e.g., grid networks, storage-area networks, etc.) Burst assembly and ingress traffic shaping Hybrid OBS/TDM or OBS/wavelength routing Manuscript Submission To submit to this special issue, follow the normal procedure for submission to JON and select ``Photonics in Switching' in the features indicator of the online

  7. Extrinsic versus intrinsic ferroelectric switching: experimental investigations using ultra-thin PVDF Langmuir-Blodgett films

    International Nuclear Information System (INIS)

    Kliem, H; Tadros-Morgane, R

    2005-01-01

    Mechanisms of extrinsic and intrinsic switching phenomena in ferroelectrics are explained and existing models are summarized. Then, criteria for an experimental distinction between both models are elaborated. Samples with thicknesses ranging from 2.7 to 63.8 nm prepared by a Langmuir-Blodgett technique were investigated with respect to these criteria. Measurements of their polarization switching behaviour, their polarization hysteresis loops, and their coercive fields were carried out. It is found that the coercive fields increase with decreasing sample thickness. Also, the switching time increases with decreasing sample thickness and it increases with decreasing field strength. The switching process turns out to be thermally activated. We find that neither intrinsic nor extrinsic models are sufficient to describe the experimental situation

  8. Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.

    Science.gov (United States)

    Zalden, Peter; Shu, Michael J; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W; Wong, H-S Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M

    2016-08-05

    Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag_{4}In_{3}Sb_{67}Te_{26}. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales-faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

  9. Power quality improvement in highly varying loads using thyristor-switched capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Poshtan, M. [Petroleum Inst., Abu Dhabi (United Arab Emirates). Dept. of Electrical Engineering; Mokhtari, H.; Esmaeili, A. [Sharif Univ. of Technology, Tehran (Iran, Islamic Republic of). Dept. of Electrical Engineering

    2007-07-01

    Ordinary contactor-based-capacitor (CBC) banks may not be able to response quickly enough in highly varying electrical loads such as welding machines or arc furnace loads. Thyristor-switched capacitor (TSC) banks are therefore used to compensate for reactive power of highly varying loads. In this paper, the performance of a TSC was compared to CBC banks. The 2 systems, were also compared in terms of energy saving in transmission systems. Simulations carried out using PSCAD/EMTDC software showed that there was a considerable difference in the performance of the 2 systems. The shortcomings of existing CBC systems include slow response of mechanical switching systems; problem of switching more than one bank into the system; and, voltage/current transients during on-off switching. 3 refs., 6 tabs., 14 figs.

  10. Design and finite element method analysis of laterally actuated multi-value nano electromechanical switches

    KAUST Repository

    Kloub, Hussam; Smith, Casey; Hussain, Muhammad Mustafa

    2011-01-01

    We report on the design and modeling of novel nano electromechanical switches suitable for implementing reset/set flip-flops, AND, NOR, and XNOR Boolean functions. Multiple logic operations can be implemented using only one switching action enabling parallel data processing; a feature that renders this design competitive with complementary metal oxide semiconductor and superior to conventional nano-electromechanical switches in terms of functionality per device footprint. The structural architecture of the newly designed switch consists of a pinned flexural beam structure which allows low strain lateral actuation for enhanced mechanical integrity. Reliable control of on-state electrical current density is achieved through the use of metal-metal contacts, true parallel beam deflection, and lithographically defined contact area to prevent possible device welding. Dynamic response as a function of device dimensions numerically investigated using ANSYS and MatLab Simulink. © 2011 The Japan Society of Applied Physics.

  11. Nanosecond Q-switched operation of coupled Yb and Tm fibre lasers

    Energy Technology Data Exchange (ETDEWEB)

    Tsang, Yuen H [Laser Photonics Research Group, School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Qamar, Fadi [Laser Photonics Research Group, School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); King, Terence A [Laser Photonics Research Group, School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Ko, Do-Kyeong [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-Gu, Gwangju 500-712 (Korea, Republic of); Lee, Jongmin [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-Gu, Gwangju 500-712 (Korea, Republic of)

    2005-05-07

    A small scale coupled Yb-silica and Tm-silica fibre laser system is described with output at 1.9 {mu}m and with Q-switching using an acousto-optic modulator and also by mechanical optical modulation. The Yb-fibre laser pump source exhibited strong self-pulsation with high-intensity pulses due to stimulated Brillouin scattering. But regular Q-switched pulses were generated from the Tm-fibre laser with an energy of {approx}2.4 {mu}J and duration (FWHM) of {approx}280 ns for modulation frequencies of 1-20 kHz when using acousto-optic modulation. The main effects that limit the Q-switched pulse peak power are the onset of gain-switched pulsing during the low-Q state and strong pump excited state absorption.

  12. Design and finite element method analysis of laterally actuated multi-value nano electromechanical switches

    KAUST Repository

    Kloub, Hussam

    2011-09-01

    We report on the design and modeling of novel nano electromechanical switches suitable for implementing reset/set flip-flops, AND, NOR, and XNOR Boolean functions. Multiple logic operations can be implemented using only one switching action enabling parallel data processing; a feature that renders this design competitive with complementary metal oxide semiconductor and superior to conventional nano-electromechanical switches in terms of functionality per device footprint. The structural architecture of the newly designed switch consists of a pinned flexural beam structure which allows low strain lateral actuation for enhanced mechanical integrity. Reliable control of on-state electrical current density is achieved through the use of metal-metal contacts, true parallel beam deflection, and lithographically defined contact area to prevent possible device welding. Dynamic response as a function of device dimensions numerically investigated using ANSYS and MatLab Simulink. © 2011 The Japan Society of Applied Physics.

  13. Contribution to high voltage matrix switches reliability

    International Nuclear Information System (INIS)

    Lausenaz, Yvan

    2000-01-01

    Nowadays, power electronic equipment requirements are important, concerning performances, quality and reliability. On the other hand, costs have to be reduced in order to satisfy the market rules. To provide cheap, reliability and performances, many standard components with mass production are developed. But the construction of specific products must be considered following these two different points: in one band you can produce specific components, with delay, over-cost problems and eventuality quality and reliability problems, in the other and you can use standard components in a adapted topologies. The CEA of Pierrelatte has adopted this last technique of power electronic conception for the development of these high voltage pulsed power converters. The technique consists in using standard components and to associate them in series and in parallel. The matrix constitutes high voltage macro-switch where electrical parameters are distributed between the synchronized components. This study deals with the reliability of these structures. It brings up the high reliability aspect of MOSFETs matrix associations. Thanks to several homemade test facilities, we obtained lots of data concerning the components we use. The understanding of defects propagation mechanisms in matrix structures has allowed us to put forwards the necessity of robust drive system, adapted clamping voltage protection, and careful geometrical construction. All these reliability considerations in matrix associations have notably allowed the construction of a new matrix structure regrouping all solutions insuring reliability. Reliable and robust, this product has already reaches the industrial stage. (author) [fr

  14. Tyrosine phosphorylation switching of a G protein.

    Science.gov (United States)

    Li, Bo; Tunc-Ozdemir, Meral; Urano, Daisuke; Jia, Haiyan; Werth, Emily G; Mowrey, David D; Hicks, Leslie M; Dokholyan, Nikolay V; Torres, Matthew P; Jones, Alan M

    2018-03-30

    Heterotrimeric G protein complexes are molecular switches relaying extracellular signals sensed by G protein-coupled receptors (GPCRs) to downstream targets in the cytoplasm, which effect cellular responses. In the plant heterotrimeric GTPase cycle, GTP hydrolysis, rather than nucleotide exchange, is the rate-limiting reaction and is accelerated by a receptor-like regulator of G signaling (RGS) protein. We hypothesized that posttranslational modification of the Gα subunit in the G protein complex regulates the RGS-dependent GTPase cycle. Our structural analyses identified an invariant phosphorylated tyrosine residue (Tyr 166 in the Arabidopsis Gα subunit AtGPA1) located in the intramolecular domain interface where nucleotide binding and hydrolysis occur. We also identified a receptor-like kinase that phosphorylates AtGPA1 in a Tyr 166 -dependent manner. Discrete molecular dynamics simulations predicted that phosphorylated Tyr 166 forms a salt bridge in this interface and potentially affects the RGS protein-accelerated GTPase cycle. Using a Tyr 166 phosphomimetic substitution, we found that the cognate RGS protein binds more tightly to the GDP-bound Gα substrate, consequently reducing its ability to accelerate GTPase activity. In conclusion, we propose that phosphorylation of Tyr 166 in AtGPA1 changes the binding pattern with AtRGS1 and thereby attenuates the steady-state rate of the GTPase cycle. We coin this newly identified mechanism "substrate phosphoswitching." © 2018 by The American Society for Biochemistry and Molecular Biology, Inc.

  15. Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

    Science.gov (United States)

    Park, Sung Min; Wang, Bo; Das, Saikat; Chae, Seung Chul; Chung, Jin-Seok; Yoon, Jong-Gul; Chen, Long-Qing; Yang, Sang Mo; Noh, Tae Won

    2018-05-01

    Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient1 that enables mechanical manipulation of polarization without applying an electrical bias2,3. Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip3,4. However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

  16. Rational Design and Tuning of Functional RNA Switch to Control an Allosteric Intermolecular Interaction.

    Science.gov (United States)

    Endoh, Tamaki; Sugimoto, Naoki

    2015-08-04

    Conformational transitions of biomolecules in response to specific stimuli control many biological processes. In natural functional RNA switches, often called riboswitches, a particular RNA structure that has a suppressive or facilitative effect on gene expression transitions to an alternative structure with the opposite effect upon binding of a specific metabolite to the aptamer region. Stability of RNA secondary structure (-ΔG°) can be predicted based on thermodynamic parameters and is easily tuned by changes in nucleobases. We envisioned that tuning of a functional RNA switch that causes an allosteric interaction between an RNA and a peptide would be possible based on a predicted switching energy (ΔΔG°) that corresponds to the energy difference between the RNA secondary structure before (-ΔG°before) and after (-ΔG°after) the RNA conformational transition. We first selected functional RNA switches responsive to neomycin with predicted ΔΔG° values ranging from 5.6 to 12.2 kcal mol(-1). We then demonstrated a simple strategy to rationally convert the functional RNA switch to switches responsive to natural metabolites thiamine pyrophosphate, S-adenosyl methionine, and adenine based on the predicted ΔΔG° values. The ΔΔG° values of the designed RNA switches proportionally correlated with interaction energy (ΔG°interaction) between the RNA and peptide, and we were able to tune the sensitivity of the RNA switches for the trigger molecule. The strategy demonstrated here will be generally applicable for construction of functional RNA switches and biosensors in which mechanisms are based on conformational transition of nucleic acids.

  17. Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

    Science.gov (United States)

    Jah, Muzar; Simon, Eric; Sharma, Ashok

    2003-01-01

    Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

  18. Reluctance motor employing superconducting magnetic flux switches

    International Nuclear Information System (INIS)

    Spyker, R.L.; Ruckstadter, E.J.

    1992-01-01

    This paper reports that superconducting flux switches controlling the magnetic flux in the poles of a motor will enable the implementation of a reluctance motor using one central single phase winding. A superconducting flux switch consists of a ring of superconducting material surrounding a ferromagnetic pole of the motor. When in the superconducting state the switch will block all magnetic flux attempting to flow in the ferromagnetic core. When switched to the normal state the superconducting switch will allow the magnetic flux to flow freely in that pole. By using one high turns-count coil as a flux generator, and selectively channeling flux among the various poles using the superconducting flux switch, 3-phase operation can be emulated with a single-hase central AC source. The motor will also operate when the flux generating coil is driven by a DC current, provided the magnetic flux switches see a continuously varying magnetic flux. Rotor rotation provides this varying flux due to the change in stator pole inductance it produces

  19. Switching between global and local levels: the level repetition effect and its hemispheric asymmetry

    Science.gov (United States)

    Kéïta, Luc; Bedoin, Nathalie; Burack, Jacob A.; Lepore, Franco

    2014-01-01

    The global level of hierarchical stimuli (Navon’s stimuli) is typically processed quicker and better than the local level; further differential hemispheric dominance is described for local (left hemisphere, LH) and global (right hemisphere, RH) processing. However, neuroimaging and behavioral data indicate that stimulus category (letter or object) could modulate the hemispheric asymmetry for the local level processing. Besides, when the targets are unpredictably displayed at the global or local level, the participant has to switch between levels, and the magnitude of the switch cost increases with the number of repeated-level trials preceding the switch. The hemispheric asymmetries associated with level switching is an unresolved issue. LH areas may be involved in carrying over the target level information in case of level repetition. These areas may also largely participate in the processing of level-changed trials. Here we hypothesized that RH areas underly the inhibitory mechanism performed on the irrelevant level, as one of the components of the level switching process. In an experiment using a within-subject design, hierarchical stimuli were briefly presented either to the right or to the left visual field. 32 adults were instructed to identify the target at the global or local level. We assessed a possible RH dominance for the non-target level inhibition by varying the attentional demands through the manipulation of level repetitions (two or gour repeated-level trials before the switch). The behavioral data confirmed a LH specialization only for the local level processing of letter-based stimuli, and detrimental effect of increased level repetitions before a switch. Further, data provides evidence for a RH advantage in inhibiting the non-target level. Taken together, the data supports the notion of the existence of multiple mechanisms underlying level-switch effects. PMID:24723903

  20. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in ``avalanche`` mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into ``avalanche`` mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  1. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  2. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1990-01-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential of GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into an avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large are (1 sq cm) and small area (<1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs., 11 figs.

  3. Subnanosecond photoconductive switching in GaAs

    Science.gov (United States)

    Druce, R. L.; Pocha, M. D.; Griffin, K. L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in 'avalanche' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into 'avalanche' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (less than 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300-1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on, and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation.

  4. Organization of the channel-switching process in parallel computer systems based on a matrix optical switch

    Science.gov (United States)

    Golomidov, Y. V.; Li, S. K.; Popov, S. A.; Smolov, V. B.

    1986-01-01

    After a classification and analysis of electronic and optoelectronic switching devices, the design principles and structure of a matrix optical switch is described. The switching and pair-exclusion operations in this type of switch are examined, and a method for the optical switching of communication channels is elaborated. Finally, attention is given to the structural organization of a parallel computer system with a matrix optical switch.

  5. DESAIN DAN IMPLEMENTSI SOFT SWITCHING BOOST KONVERTER DENGAN SIMPLE AUXILLARY RESONANT SWITCH (SARC

    Directory of Open Access Journals (Sweden)

    Dimas Bagus Saputra

    2017-01-01

    Full Text Available Boost konverter merupakan penaik tegangan DC ke tegangan DC yang mempunyai tegangan output yang lebih tinggi dibanding inputnya. Penggunaan boost konverter diera modern semakin meningkat dan dibuat dengan dimensi yang lebih kecil, berat yang lebih ringan dan efisiensi yang lebih tinggi dibanding dengan boost konverter generasi terdahulu. Tetapi rugi-rugi periodik saat on/off meningkat. Untuk meraih kriteria tersebut, teknik hard switching boost konverter berevolusi menjadi teknik soft switching dengan menambah rangkaian simple auxiliary resonant circuit (SARC. Karena penambahan rangkaian SARC tersebut konverter bekerja pada kondisi zero-voltage switching switch (ZVS dan zero current switch (ZCS, sehingga saklar semikonduktor tidak bekerja secara hard switching lagi. Pada penelitian ini akan di desain dan diimplementaskan soft switching boost konverter dengan SARC. Kelebihan dari soft switching boost konverter dengan SARC adalah mempunyai efisiensi yang lebih tinggi dibanding dengan boost konverter konventional. Dari hasil implementasi menunjukkan konverter yang diajukan telah meraih zero voltage switch (ZVS. Sehingga boost konverter zero voltage switch (ZVS bisa diaplikasikan pada sistem power suplay yang membutuhkan efisiensi energi yang tinggi terutama pada daya yang tinggi.

  6. Comparison of switching control algorithms effective in restricting the switching in the neighborhood of the origin

    International Nuclear Information System (INIS)

    Joung, JinWook; Chung, Lan; Smyth, Andrew W

    2010-01-01

    The active interaction control (AIC) system consisting of a primary structure, an auxiliary structure and an interaction element was proposed to protect the primary structure against earthquakes and winds. The objective of the AIC system in reducing the responses of the primary structure is fulfilled by activating or deactivating the switching between the engagement and the disengagement of the primary and auxiliary structures through the interaction element. The status of the interaction element is controlled by switching control algorithms. The previously developed switching control algorithms require an excessive amount of switching, which is inefficient. In this paper, the excessive amount of switching is restricted by imposing an appropriately designed switching boundary region, where switching is prohibited, on pre-designed engagement–disengagement conditions. Two different approaches are used in designing the newly proposed AID-off and AID-off 2 algorithms. The AID-off 2 algorithm is designed to affect deactivated switching regions explicitly, unlike the AID-off algorithm, which follows the same procedure of designing the engagement–disengagement conditions of the previously developed algorithms, by using the current status of the AIC system. Both algorithms are shown to be effective in reducing the amount of switching times triggered from the previously developed AID algorithm under an appropriately selected control sampling period for different earthquakes, but the AID-off 2 algorithm outperforms the AID-off algorithm in reducing the number of switching times

  7. What’s Easier: Doing What You Want, or Being Told What to Do? Cued versus Voluntary Language and Task Switching

    Science.gov (United States)

    Gollan, Tamar H.; Kleinman, Daniel; Wierenga, Christina E.

    2014-01-01

    The current study contrasted cued versus voluntary switching to investigate switching efficiency and possible sharing of control mechanisms across linguistic and non-linguistic domains. Bilinguals switched between naming pictures in Spanish versus English or between reading numbers aloud versus adding their digits, either without or with repetition of stimuli, and with fewer requirements as to when and how much they had to switch relative to previous instantiations of voluntary switching. Without repetition (Experiment 1), voluntary responses were faster than cued responses on both stay and switch trials (especially in the non-linguistic switching task), whereas in previous studies the voluntary advantage was restricted to switch-cost reduction. Similarly, when targets were presented repeatedly (Experiment 2), voluntary responses were faster overall for both linguistic and non-linguistic switching, though here the advantage tended to be larger on switch trials. Experiment 3 confirmed the overall voluntary speed advantage for the read-add task in monolinguals, and revealed a reduction in switch costs only for a different non-linguistic task (size-parity judgments). These results reveal greater overall advantages for voluntary over cued switching than previously reported, but also that the precise manifestation of the voluntary advantage can vary with different tasks. In the linguistic domain, lexical inaccessibility introduces some unique control mechanisms, and repetition may magnify cross-domain overlap in control mechanisms. Finally, under some limited conditions, cost-free switches were found in both linguistic and non-linguistic domains; however, suspension of top-down control may be restricted to language or highly automatic tasks. PMID:25313951

  8. Exponential Stability of Switched Positive Homogeneous Systems

    Directory of Open Access Journals (Sweden)

    Dadong Tian

    2017-01-01

    Full Text Available This paper studies the exponential stability of switched positive nonlinear systems defined by cooperative and homogeneous vector fields. In order to capture the decay rate of such systems, we first consider the subsystems. A sufficient condition for exponential stability of subsystems with time-varying delays is derived. In particular, for the corresponding delay-free systems, we prove that this sufficient condition is also necessary. Then, we present a sufficient condition of exponential stability under minimum dwell time switching for the switched positive nonlinear systems. Some results in the previous literature are extended. Finally, a numerical example is given to demonstrate the effectiveness of the obtained results.

  9. High voltage superconducting switch for power application

    International Nuclear Information System (INIS)

    Mawardi, O.; Ferendeci, A.; Gattozzi, A.

    1983-01-01

    This paper reports the development of a novel interrupter which meets the requirements of a high voltage direct current (HVDC) power switch and at the same time doubles as a current limiter. The basic concept of the interrupter makes use of a fast superconducting, high capacity (SHIC) switch that carries the full load current while in the superconducting state and reverts to the normal resistive state when triggered. Typical design parameters are examined for the case of a HVDC transmission line handling 2.5KA at 150KVDC. The result is a power switch with superior performance and smaller size than the ones reported to date

  10. Consumer poaching, brand switching, and price transparency

    DEFF Research Database (Denmark)

    Schultz, Christian

    2014-01-01

    This paper addresses price transparency on the consumer side in markets with behavioral price discrimination which feature welfare reducing brand switching. When long-term contracts are not available, an increase in transparency intensifies competition, lowers prices and profits, reduces brand...... switching and benefits consumers and welfare. With long-term contracts, an increase in transparency reduces the use of long-term contracts, leading to more brand switching and a welfare loss. Otherwise, the results are the same as without long-term contracts....

  11. Electrically switched cesium ion exchange

    International Nuclear Information System (INIS)

    Lilga, M.A.; Orth, R.J.; Sukamto, J.P.H.; Schwartz, D.T.; Haight, S.M.; Genders, J.D.

    1997-04-01

    Electrically Switched Ion Exchange (ESIX) is a separation technology being developed as an alternative to conventional ion exchange for removing radionuclides from high-level waste. The ESIX technology, which combines ion exchange and electrochemistry, is geared toward producing electroactive films that are highly selective, regenerable, and long lasting. During the process, ion uptake and elution are controlled directly by modulating the potential of an ion exchange film that has been electrochemically deposited onto a high surface area electrode. This method adds little sodium to the waste stream and minimizes the secondary wastes associated with traditional ion exchange techniques. Development of the ESIX process is well underway for cesium removal using ferrocyanides as the electroactive films. Films having selectivity for perrhenate (a pertechnetate surrogate) over nitrate also have been deposited and tested. A case study for the KE Basin on the Hanford Site was conducted based on the results of the development testing. Engineering design baseline parameters for film deposition, film regeneration, cesium loading, and cesium elution were used for developing a conceptual system. Order of magnitude cost estimates were developed to compare with conventional ion exchange. This case study demonstrated that KE Basin wastewater could be processed continuously with minimal secondary waste and reduced associated disposal costs, as well as lower capital and labor expenditures

  12. Friendship-based partner switching promotes cooperation in heterogeneous populations

    Science.gov (United States)

    Chen, Wei; Wu, Te; Li, Zhiwu; Wang, Long

    2016-02-01

    The forming of human social ties tends to be with similar individuals. This study concentrates on the emergence of cooperation among heterogeneous populations. A simple model is proposed by considering the impact of interplay between the evolution of strategies and that of social partnerships on cooperation dynamics. Whenever two individuals acquire the rewards by playing prisoner's dilemma game with each other, the friendship (friendship is quantified as the weight of a link) between the two individuals deepens. Individuals can switch off the social ties with the partners who are unfriendly and rewire to similar new ones. Under this partner switching mechanism, population structure is divided into several groups and cooperation can prevail. It is observed that the frequent tendency of partner switching can lead to the enhancement of cooperative behavior under the enormous temptation to defect. Moreover, the influence of discounting the relationship between different individuals is also investigated. Meanwhile, the cooperation prevails when the adjustment of friendships mainly depends on the incomes of selected individuals rather than that of their partners. Finally, it is found that too similar population fail to maximize the cooperation and there exists a moderate similarity that can optimize cooperation.

  13. Graphene and its derivatives: switching ON and OFF.

    Science.gov (United States)

    Chen, Yu; Zhang, Bin; Liu, Gang; Zhuang, Xiaodong; Kang, En-Tang

    2012-07-07

    As the thinnest material ever known in the universe, graphene has been attracting tremendous amount of attention in both materials science and condensed-matter physics since its successful isolation a few years ago. This one-atom-thick two-dimensional pseudo-infinite nano-crystal consists of sp(2)-hybridized aromatic carbon atoms covalently packed into a continuous hexagonal lattice. Graphene exhibits a range of unique properties, viz., high three-dimensional aspect ratio and large specific surface area, superior mechanical stiffness and flexibility, remarkable optical transmittance, extraordinary thermal response and excellent electronic transport properties, promising its applications in the next generation electronics. To switch graphene and its derivatives between ON and OFF states in nanoelectronic memory devices, various techniques have been developed to manipulate the carbon atomic sheets via introducing the valence-conduction bandgap and to enhance their processability. In this article, we review the utilization of electrically, thermally and chemically modified graphene and its polymer-functionalized derivatives for switching and information storage applications. The challenges posed on the development of novel graphene materials and further enhancements of the device switching performance have also been discussed.

  14. Magnetization switching schemes for nanoscale three-terminal spintronics devices

    Science.gov (United States)

    Fukami, Shunsuke; Ohno, Hideo

    2017-08-01

    Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

  15. Bistable switches control memory and plasticity in cellular differentiation

    Science.gov (United States)

    Wang, Lei; Walker, Brandon L.; Iannaccone, Stephen; Bhatt, Devang; Kennedy, Patrick J.; Tse, William T.

    2009-01-01

    Development of stem and progenitor cells into specialized tissues in multicellular organisms involves a series of cell fate decisions. Cellular differentiation in higher organisms is generally considered irreversible, and the idea of developmental plasticity in postnatal tissues is controversial. Here, we show that inhibition of mitogen-activated protein kinase (MAPK) in a human bone marrow stromal cell-derived myogenic subclone suppresses their myogenic ability and converts them into satellite cell-like precursors that respond to osteogenic stimulation. Clonal analysis of the induced osteogenic response reveals ultrasensitivity and an “all-or-none” behavior, hallmarks of a bistable switch mechanism with stochastic noise. The response demonstrates cellular memory, which is contingent on the accumulation of an intracellular factor and can be erased by factor dilution through cell divisions or inhibition of protein synthesis. The effect of MAPK inhibition also exhibits memory and appears to be controlled by another bistable switch further upstream that determines cell fate. Once the memory associated with osteogenic differentiation is erased, the cells regain their myogenic ability. These results support a model of cell fate decision in which a network of bistable switches controls inducible production of lineage-specific differentiation factors. A competitive balance between these factors determines cell fate. Our work underscores the dynamic nature of cellular differentiation and explains mechanistically the dual properties of stability and plasticity associated with the process. PMID:19366677

  16. Switching Adaptability in Human-Inspired Sidesteps: A Minimal Model.

    Science.gov (United States)

    Fujii, Keisuke; Yoshihara, Yuki; Tanabe, Hiroko; Yamamoto, Yuji

    2017-01-01

    Humans can adapt to abruptly changing situations by coordinating redundant components, even in bipedality. Conventional adaptability has been reproduced by various computational approaches, such as optimal control, neural oscillator, and reinforcement learning; however, the adaptability in bipedal locomotion necessary for biological and social activities, such as unpredicted direction change in chase-and-escape, is unknown due to the dynamically unstable multi-link closed-loop system. Here we propose a switching adaptation model for performing bipedal locomotion by improving autonomous distributed control, where autonomous actuators interact without central control and switch the roles for propulsion, balancing, and leg swing. Our switching mobility model achieved direction change at any time using only three actuators, although it showed higher motor costs than comparable models without direction change. Our method of evaluating such adaptation at any time should be utilized as a prerequisite for understanding universal motor control. The proposed algorithm may simply explain and predict the adaptation mechanism in human bipedality to coordinate the actuator functions within and between limbs.

  17. Fiber-optical switch using cam-micromotor driven by scratch drive actuators

    Science.gov (United States)

    Kanamori, Y.; Aoki, Y.; Sasaki, M.; Hosoya, H.; Wada, A.; Hane, K.

    2005-01-01

    We fabricated a 1 × 1 fiber-optic switch using a cam-micromotor driven by scratch drive actuators (SDAs). Using the cam-micromotor, mechanical translation and precise positioning of an optical fiber were performed. An optical fiber of diameter 50 µm was bent and pushed out with a cam-mechanism driven by the SDAs fabricated by surface micromachining. The maximum rotation speed of the cam-micromotor was 7.5 rpm at a driving frequency of 1.5 kHz. The transient time of the switch to attenuate coupling efficiency less than -40 dB was around 10 ms.

  18. Binomial tree method for pricing a regime-switching volatility stock loans

    Science.gov (United States)

    Putri, Endah R. M.; Zamani, Muhammad S.; Utomo, Daryono B.

    2018-03-01

    Binomial model with regime switching may represents the price of stock loan which follows the stochastic process. Stock loan is one of alternative that appeal investors to get the liquidity without selling the stock. The stock loan mechanism resembles that of American call option when someone can exercise any time during the contract period. From the resembles both of mechanism, determination price of stock loan can be interpreted from the model of American call option. The simulation result shows the behavior of the price of stock loan under a regime-switching with respect to various interest rate and maturity.

  19. Dissipation enhanced vibrational sensing in an olfactory molecular switch

    International Nuclear Information System (INIS)

    Chęcińska, Agata; Heaney, Libby; Pollock, Felix A.; Nazir, Ahsan

    2015-01-01

    Motivated by a proposed olfactory mechanism based on a vibrationally activated molecular switch, we study electron transport within a donor-acceptor pair that is coupled to a vibrational mode and embedded in a surrounding environment. We derive a polaron master equation with which we study the dynamics of both the electronic and vibrational degrees of freedom beyond previously employed semiclassical (Marcus-Jortner) rate analyses. We show (i) that in the absence of explicit dissipation of the vibrational mode, the semiclassical approach is generally unable to capture the dynamics predicted by our master equation due to both its assumption of one-way (exponential) electron transfer from donor to acceptor and its neglect of the spectral details of the environment; (ii) that by additionally allowing strong dissipation to act on the odorant vibrational mode, we can recover exponential electron transfer, though typically at a rate that differs from that given by the Marcus-Jortner expression; (iii) that the ability of the molecular switch to discriminate between the presence and absence of the odorant, and its sensitivity to the odorant vibrational frequency, is enhanced significantly in this strong dissipation regime, when compared to the case without mode dissipation; and (iv) that details of the environment absent from previous Marcus-Jortner analyses can also dramatically alter the sensitivity of the molecular switch, in particular, allowing its frequency resolution to be improved. Our results thus demonstrate the constructive role dissipation can play in facilitating sensitive and selective operation in molecular switch devices, as well as the inadequacy of semiclassical rate equations in analysing such behaviour over a wide range of parameters

  20. N-state random switching based on quantum tunnelling

    Science.gov (United States)

    Bernardo Gavito, Ramón; Jiménez Urbanos, Fernando; Roberts, Jonathan; Sexton, James; Astbury, Benjamin; Shokeir, Hamzah; McGrath, Thomas; Noori, Yasir J.; Woodhead, Christopher S.; Missous, Mohamed; Roedig, Utz; Young, Robert J.

    2017-08-01

    In this work, we show how the hysteretic behaviour of resonant tunnelling diodes (RTDs) can be exploited for new functionalities. In particular, the RTDs exhibit a stochastic 2-state switching mechanism that could be useful for random number generation and cryptographic applications. This behaviour can be scaled to N-bit switching, by connecting various RTDs in series. The InGaAs/AlAs RTDs used in our experiments display very sharp negative differential resistance (NDR) peaks at room temperature which show hysteresis cycles that, rather than having a fixed switching threshold, show a probability distribution about a central value. We propose to use this intrinsic uncertainty emerging from the quantum nature of the RTDs as a source of randomness. We show that a combination of two RTDs in series results in devices with three-state outputs and discuss the possibility of scaling to N-state devices by subsequent series connections of RTDs, which we demonstrate for the up to the 4-state case. In this work, we suggest using that the intrinsic uncertainty in the conduction paths of resonant tunnelling diodes can behave as a source of randomness that can be integrated into current electronics to produce on-chip true random number generators. The N-shaped I-V characteristic of RTDs results in a two-level random voltage output when driven with current pulse trains. Electrical characterisation and randomness testing of the devices was conducted in order to determine the validity of the true randomness assumption. Based on the results obtained for the single RTD case, we suggest the possibility of using multi-well devices to generate N-state random switching devices for their use in random number generation or multi-valued logic devices.

  1. Controllability of multi-agent systems with periodically switching topologies and switching leaders

    Science.gov (United States)

    Tian, Lingling; Zhao, Bin; Wang, Long

    2018-05-01

    This paper considers controllability of multi-agent systems with periodically switching topologies and switching leaders. The concept of m-periodic controllability is proposed, and a criterion for m-periodic controllability is established. The effect of the duration of subsystems on controllability is analysed by utilising a property of analytic functions. In addition, the influence of switching periods on controllability is investigated, and an algorithm is proposed to search for the fewest periods to ensure controllability. A necessary condition for m-periodic controllability is obtained from the perspective of eigenvectors of the subsystems' Laplacian matrices. For a system with switching leaders, it is proved that switching-leader controllability is equivalent to multiple-leader controllability. Furthermore, both the switching order and the tenure of agents being leaders have no effect on the controllability. Some examples are provided to illustrate the theoretical results.

  2. Instability in time-delayed switched systems induced by fast and random switching

    Science.gov (United States)

    Guo, Yao; Lin, Wei; Chen, Yuming; Wu, Jianhong

    2017-07-01

    In this paper, we consider a switched system comprising finitely or infinitely many subsystems described by linear time-delayed differential equations and a rule that orchestrates the system switching randomly among these subsystems, where the switching times are also randomly chosen. We first construct a counterintuitive example where even though all the time-delayed subsystems are exponentially stable, the behaviors of the randomly switched system change from stable dynamics to unstable dynamics with a decrease of the dwell time. Then by using the theories of stochastic processes and delay differential equations, we present a general result on when this fast and random switching induced instability should occur and we extend this to the case of nonlinear time-delayed switched systems as well.

  3. Analysis of Switched-Rigid Floating Oscillator

    Directory of Open Access Journals (Sweden)

    Prabhakar R. Marur

    2009-01-01

    Full Text Available In explicit finite element simulations, a technique called deformable-to-rigid (D2R switching is used routinely to reduce the computation time. Using the D2R option, the deformable parts in the model can be switched to rigid and reverted back to deformable when needed during the analysis. The time of activation of D2R however influences the overall dynamics of the system being analyzed. In this paper, a theoretical basis for the selection of time of rigid switching based on system energy is established. A floating oscillator problem is investigated for this purpose and closed-form analytical expressions are derived for different phases in rigid switching. The analytical expressions are validated by comparing the theoretical results with numerical computations.

  4. Multi-planed unified switching topologies

    Science.gov (United States)

    Chen, Dong; Heidelberger, Philip; Sugawara, Yutaka

    2017-07-04

    An apparatus and method for extending the scalability and improving the partitionability of networks that contain all-to-all links for transporting packet traffic from a source endpoint to a destination endpoint with low per-endpoint (per-server) cost and a small number of hops. An all-to-all wiring in the baseline topology is decomposed into smaller all-to-all components in which each smaller all-to-all connection is replaced with star topology by using global switches. Stacking multiple copies of the star topology baseline network creates a multi-planed switching topology for transporting packet traffic. Point-to-point unified stacking method using global switch wiring methods connects multiple planes of a baseline topology by using the global switches to create a large network size with a low number of hops, i.e., low network latency. Grouped unified stacking method increases the scalability (network size) of a stacked topology.

  5. Proton-Controlled Organic Microlaser Switch.

    Science.gov (United States)

    Gao, Zhenhua; Zhang, Wei; Yan, Yongli; Yi, Jun; Dong, Haiyun; Wang, Kang; Yao, Jiannian; Zhao, Yong Sheng

    2018-05-25

    Microscale laser switches have been playing irreplaceable roles in the development of photonic devices with high integration levels. However, it remains a challenge to switch the lasing wavelengths across a wide range due to relatively fixed energy bands in traditional semiconductors. Here, we report a strategy to switch the lasing wavelengths among multiple states based on a proton-controlled intramolecular charge-transfer (ICT) process in organic dye-doped flexible microsphere resonant cavities. The protonic acids can effectively bind onto the ICT molecules, which thus enhance the ICT strength of the dyes and lead to a red-shifted gain behavior. On this basis, the gain region was effectively modulated by using acids with different proton-donating ability, and as a result, laser switching among multiple wavelengths was achieved. The results will provide guidance for the rational design of miniaturized lasers with performances based on the characteristic of organic optoelectronic materials.

  6. Delayed switching applied to memristor neural networks

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Frank Z.; Yang Xiao; Lim Guan [Future Computing Group, School of Computing, University of Kent, Canterbury (United Kingdom); Helian Na [School of Computer Science, University of Hertfordshire, Hatfield (United Kingdom); Wu Sining [Xyratex, Havant (United Kingdom); Guo Yike [Department of Computing, Imperial College, London (United Kingdom); Rashid, Md Mamunur [CERN, Geneva (Switzerland)

    2012-04-01

    Magnetic flux and electric charge are linked in a memristor. We reported recently that a memristor has a peculiar effect in which the switching takes place with a time delay because a memristor possesses a certain inertia. This effect was named the ''delayed switching effect.'' In this work, we elaborate on the importance of delayed switching in a brain-like computer using memristor neural networks. The effect is used to control the switching of a memristor synapse between two neurons that fire together (the Hebbian rule). A theoretical formula is found, and the design is verified by a simulation. We have also built an experimental setup consisting of electronic memristive synapses and electronic neurons.

  7. Delayed switching applied to memristor neural networks

    International Nuclear Information System (INIS)

    Wang, Frank Z.; Yang Xiao; Lim Guan; Helian Na; Wu Sining; Guo Yike; Rashid, Md Mamunur

    2012-01-01

    Magnetic flux and electric charge are linked in a memristor. We reported recently that a memristor has a peculiar effect in which the switching takes place with a time delay because a memristor possesses a certain inertia. This effect was named the ''delayed switching effect.'' In this work, we elaborate on the importance of delayed switching in a brain-like computer using memristor neural networks. The effect is used to control the switching of a memristor synapse between two neurons that fire together (the Hebbian rule). A theoretical formula is found, and the design is verified by a simulation. We have also built an experimental setup consisting of electronic memristive synapses and electronic neurons.

  8. A nanoplasmonic switch based on molecular machines

    KAUST Repository

    Zheng, Yue Bing; Yang, Ying-Wei; Jensen, Lasse; Fang, Lei; Juluri, Bala Krishna; Weiss, Paul S.; Stoddart, J. Fraser; Huang, Tony Jun

    2009-01-01

    We aim to develop a molecular-machine-driven nanoplasmonic switch for its use in future nanophotonic integrated circuits (ICs) that have applications in optical communication, information processing, biological and chemical sensing. Experimental

  9. Topological photonic orbital-angular-momentum switch

    Science.gov (United States)

    Luo, Xi-Wang; Zhang, Chuanwei; Guo, Guang-Can; Zhou, Zheng-Wei

    2018-04-01

    The large number of available orbital-angular-momentum (OAM) states of photons provides a unique resource for many important applications in quantum information and optical communications. However, conventional OAM switching devices usually rely on precise parameter control and are limited by slow switching rate and low efficiency. Here we propose a robust, fast, and efficient photonic OAM switch device based on a topological process, where photons are adiabatically pumped to a target OAM state on demand. Such topological OAM pumping can be realized through manipulating photons in a few degenerate main cavities and involves only a limited number of optical elements. A large change of OAM at ˜10q can be realized with only q degenerate main cavities and at most 5 q pumping cycles. The topological photonic OAM switch may become a powerful device for broad applications in many different fields and motivate a topological design of conventional optical devices.

  10. Switching overvoltages in offshore wind power grids

    DEFF Research Database (Denmark)

    Arana Aristi, Ivan

    and cables are presented. In Chapter 4 results from time domain measurements and simulations of switching operations in offshore wind power grids are described. Specifically, switching operations on a single wind turbine, the collection grid, the export system and the external grid measured in several real...... offshore wind farms are shown together with simulation results. Switching operations in offshore wind power grids can be simulated with different electromagnetic transient programs. Different programs were used in the project and compared results are included in Chapter 4. Also in Chapter 4 different......Switching transients in wind turbines, the collection grid, the export system and the external grid in offshore wind farms, during normal or abnormal operation, are the most important phenomena when conducting insulation coordination studies. However, the recommended models and methods from...

  11. Bistable fluidic valve is electrically switched

    Science.gov (United States)

    Fiet, O.; Salvinski, R. J.

    1970-01-01

    Bistable control valve is selectively switched by direct application of an electrical field to divert fluid from one output channel to another. Valve is inexpensive, has no moving parts, and operates on fluids which are relatively poor electrical conductors.

  12. Modeling switching behaviour of direct selling customers

    Directory of Open Access Journals (Sweden)

    P Msweli-Mbanga

    2004-04-01

    Full Text Available The direct selling industry suffers a high turnover rate of salespeople, resulting in high costs of training new salespeople. Further costs are incurred when broken relationships with customers cause them to switch from one product supplier to another. This study identifies twelve factors that drive the switching behaviour of direct sales customers and examines the extent to which these factors influence switching. Exploratory factor analysis was used to assess the validity of these factors. The factors were represented in a model that posits that an interpersonal relationship between a direct sales person and a customer moderates the relationship between switching behaviour and loyalty. Structural equation modeling was used to test the proposed model. The author then discusses the empirical findings and their managerial implications, providing further avenues for research.

  13. Active plasmonics in WDM traffic switching applications

    DEFF Research Database (Denmark)

    Papaioannou, S.; Kalavrouziotis, D.; Vyrsokinos, K.

    2012-01-01

    -enabling characteristics of active plasmonic circuits with an ultra-low power 3 response time product represents a crucial milestone in the development of active plasmonics towards real telecom and datacom applications, where low-energy and fast TO operation with small-size circuitry is targeted........ The first active Dielectric-Loaded Surface Plasmon Polariton (DLSPP) thermo-optic (TO) switches with successful performance in single-channel 10 Gb/s data traffic environments have led the inroad towards bringing low-power active plasmonics in practical traffic applications. In this article, we introduce...... active plasmonics into Wavelength Division Multiplexed (WDM) switching applications, using the smallest TO DLSPP-based Mach-Zehnder interferometric switch reported so far and showing its successful performance in 4310 Gb/s low-power and fast switching operation. The demonstration of the WDM...

  14. Theoretical model for plasma opening switch

    International Nuclear Information System (INIS)

    Baker, L.

    1980-07-01

    The theory of an explosive plasma switch is developed and compared with the experimental results of Pavlovskii and work at Sandia. A simple analytic model is developed, which predicts that such switches may achieve opening times of approximately 100 ns. When the switching time is limited by channel mixing it scales as t = C(m d 0 )/sup 1/2/P 0 2 P/sub e//sup -5/2/ where m is the foil mass per unit area, d 0 the channel thickness and P 0 the channel pressure (at explosive breakout), P/sub e/ the explosive pressure, C a constant of order 10 for c.g.s. units. Thus faster switching times may be achieved by minimizing foil mass and channel pressure, or increasing explosive product pressure, with the scaling exponents as shown suggesting that changes in pressures would be more effective

  15. Blood and Books: Performing Code Switching

    Directory of Open Access Journals (Sweden)

    Jeff Friedman

    2008-05-01

    Full Text Available Code switching is a linguistic term that identifies ways individuals use communication modes and registers to negotiate difference in social relations. This essay suggests that arts-based inquiry, in the form of choreography and performance, provides a suitable and efficacious location within which both verbal and nonverbal channels of code switching can be investigated. Blood and Books, a case study of dance choreography within the context of post-colonial Maori performance in Aotearoa/New Zealand, is described and analyzed for its performance of code switching. The essay is framed by a discussion of how arts-based research within tertiary higher education requires careful negotiation in the form of code switching, as performed by the author's reflexive use of vernacular and formal registers in the essay. URN: urn:nbn:de:0114-fqs0802462

  16. Ultra-fast all-optical plasmonic switching in near infra-red spectrum using a Kerr nonlinear ring resonator

    Science.gov (United States)

    Nurmohammadi, Tofiq; Abbasian, Karim; Yadipour, Reza

    2018-03-01

    In this paper, an all-optical plasmonic switch based on metal-insulator-metal (MIM) nanoplasmonic waveguide with a Kerr nonlinear ring resonator is introduced and studied. Two-dimensional simulations utilizing the finite-difference time-domain algorithm are used to demonstrate an apparent optical bistability and significant switching mechanisms (in enabled-low condition: T(ON/OFF) =21.9 and in enabled-high condition: T(ON/OFF) =24.9) of the signal light arisen by altering the pump-light intensity. The proposed all-optical switching demonstrates femtosecond-scale feedback time (90 fs) and then ultra-fast switching can be achieved. The offered all-optical switch may recognize potential significant applications in integrated optical circuits.

  17. Error rate degradation due to switch crosstalk in large modular switched optical networks

    DEFF Research Database (Denmark)

    Saxtoft, Christian; Chidgey, P.

    1993-01-01

    A theoretical model of an optical network incorporating wavelength selective elements, amplifiers, couplers and switches is presented. The model is used to evaluate a large modular switch optical network that provides the capability of adapting easily to changes in network traffic requirements. T....... The network dimensions are shown to be limited by the optical crosstalk in the switch matrices and by the polarization dependent loss in the optical components...

  18. Optical Multidimensional Switching for Data Center Networks

    OpenAIRE

    Kamchevska, Valerija; Galili, Michael; Oxenløwe, Leif Katsuo; Berger, Michael Stübert

    2017-01-01

    Optical switches are known for the ability to provide high bandwidth connectivity at a relatively low power consumption and low latency. Several recent demonstrations on optical data center architectures confirm the potential for introducing all-optical switching within the data center, thus avoiding power hungry optical-electrical-optical conversions at each node. This Ph.D. thesis focuses precisely on the application of optical technologies in data center networks where optics is not only u...

  19. High voltage disconnect switch position monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Crampton, S W

    1983-08-01

    Unreliable position indication on high-voltage (HV) disconnect switches can result in equipment damage worth many times the cost of a disconnect switch. The benefits and limitations of a number of possible methods of reliably monitoring HV disconnect switches are assessed. Several methods of powering active devices at HV are noted. It is concluded that the most reliable way of monitoring switch position at reasonable cost would use a passive hermetically-sealed blade-position sensor located at HV, with a fibre-optic link between HV and ground. Separate sensors would be used for open and closed position indication. For maximum reliability the fibre-optic link would continue into the relay building. A passive magnetically actuated fibre-optic sensor has been built which demonstrates the feasibility of the concept. The sensor monitors blade position relative to the jaws in three dimensions with high resolution. A design for an improved passive magneto-optic sensor has significantly lower optical losses, allowing a single fibre-optic loop and 3 sensors to monitor closure of all phases of a disconnect switch. A similar loop would monitor switch opening. The improved sensor has a solid copper housing to provide greater immunity to fault currents, and to protect it from the environment and from physical damage. Two methods of providing a protected path for fibre-optics passing from HV to ground are proposed, one using a hollow porcelain switch-support insulator and the other using an additional small-diameter polymer insulator with optical fibres imbedded in its fibreglass core. A number of improvements are recommended which can be made to existing switches to increase their reliability. 16 refs., 13 figs., 1 tab.

  20. Assessing the Consequences of a Channel Switch

    OpenAIRE

    Xinlei (Jack) Chen; George John; Om Narasimhan

    2008-01-01

    Switching marketing channels is an expensive and sticky decision. While a number of theories suggest efficiency and strategic differences between channels, there is virtually no work on combining these ideas into an empirically workable methodology to assess the impact of a channel switch. In this study, we undertake to close this gap with an empirical study of the sports drink market, featuring competing producers and heterogeneous channels. We estimate demand and cost parameters for a numbe...

  1. Portfolio Selection with Jumps under Regime Switching

    Directory of Open Access Journals (Sweden)

    Lin Zhao

    2010-01-01

    Full Text Available We investigate a continuous-time version of the mean-variance portfolio selection model with jumps under regime switching. The portfolio selection is proposed and analyzed for a market consisting of one bank account and multiple stocks. The random regime switching is assumed to be independent of the underlying Brownian motion and jump processes. A Markov chain modulated diffusion formulation is employed to model the problem.

  2. Lasers for switched-power linacs

    International Nuclear Information System (INIS)

    Bigio, I.J.

    1988-01-01

    Laser-switched power surges for particle accelerators, just as with direct laser-driven accelerator schemes, place unique demands on the specifications of the invoked laser systems. We review the laser requirements for switched power sources of the types described in other chapters of this volume. The relative advantages and disadvantages of selected lasers are listed, and the appropriateness and scalability of existing technology is discussed. 4 refs., 2 figs., 2 tabs

  3. The Robustness of Stochastic Switching Networks

    OpenAIRE

    Loh, Po-Ling; Zhou, Hongchao; Bruck, Jehoshua

    2009-01-01

    Many natural systems, including chemical and biological systems, can be modeled using stochastic switching circuits. These circuits consist of stochastic switches, called pswitches, which operate with a fixed probability of being open or closed. We study the effect caused by introducing an error of size ∈ to each pswitch in a stochastic circuit. We analyze two constructions – simple series-parallel and general series-parallel circuits – and prove that simple series-parallel circuits are robus...

  4. A microcomputer for a packet switched network

    International Nuclear Information System (INIS)

    Seller, P.; Bairstow, R.; Barlow, J.; Waters, M.

    1982-12-01

    The Bubble Chamber Research Group of the Rutherford and Appleton Laboratory has a large film analysis facility. This comprises 16 digitising tables used for the measurement of bubble chamber film. Each of these tables has an associated microcomputer. These microcomputers are linked by a star structured packet switched local area network (LAN) to a VAX 11/780. The LAN, and in particular a microcomputer of novel architecture designed to act as the central switch of the network, is described. (author)

  5. EYE CONTROLLED SWITCHING USING CIRCULAR HOUGH TRANSFORM

    OpenAIRE

    Sagar Lakhmani

    2014-01-01

    The paper presents hands free interface between electrical appliances or devices. This technology is intended to replace conventional switching devices for the use of disabled. It is a new way to interact with the electrical or electronic devices that we use in our daily life. The paper illustrates how the movement of eye cornea and blinking can be used for switching the devices. The basic Circle Detection algorithm is used to determine the position of eye. Eye blinking is used...

  6. Fast simulation techniques for switching converters

    Science.gov (United States)

    King, Roger J.

    1987-01-01

    Techniques for simulating a switching converter are examined. The state equations for the equivalent circuits, which represent the switching converter, are presented and explained. The uses of the Newton-Raphson iteration, low ripple approximation, half-cycle symmetry, and discrete time equations to compute the interval durations are described. An example is presented in which these methods are illustrated by applying them to a parallel-loaded resonant inverter with three equivalent circuits for its continuous mode of operation.

  7. Diffusion pipes at PNP switching transistors

    International Nuclear Information System (INIS)

    Sachelarie, D.; Postolache, C.; Gaiseanu, F.

    1976-01-01

    The appearance of the ''diffusion pipes'' greatly affects the fabrication of the PNP high-frequency/very-fast-switching transistors. A brief review of the principal problems connected to the presence of these ''pipes'' is made. A research program is presented which permitted the fabrication of the PNP switching transistors at ICCE-Bucharest, with transition frequency fsub(T) = 1.2 GHz and storage time tsub(s) = 4.5 ns. (author)

  8. Organic-based molecular switches for molecular electronics.

    Science.gov (United States)

    Fuentes, Noelia; Martín-Lasanta, Ana; Alvarez de Cienfuegos, Luis; Ribagorda, Maria; Parra, Andres; Cuerva, Juan M

    2011-10-05

    In a general sense, molecular electronics (ME) is the branch of nanotechnology which studies the application of molecular building blocks for the fabrication of electronic components. Among the different types of molecules, organic compounds have been revealed as promising candidates for ME, due to the easy access, great structural diversity and suitable electronic and mechanical properties. Thanks to these useful capabilities, organic molecules have been used to emulate electronic devices at the nanoscopic scale. In this feature article, we present the diverse strategies used to develop organic switches towards ME with special attention to non-volatile systems.

  9. Passive Classification of Wireless NICs during Rate Switching

    Directory of Open Access Journals (Sweden)

    Cherita L. Corbett

    2008-02-01

    Full Text Available Computer networks have become increasingly ubiquitous. However, with the increase in networked applications, there has also been an increase in difficulty to manage and secure these networks. The proliferation of 802.11 wireless networks has heightened this problem by extending networks beyond physical boundaries. We propose the use of spectral analysis to identify the type of wireless network interface card (NIC. This mechanism can be applied to support the detection of unauthorized systems that use NICs which are different from that of a legitimate system. We focus on rate switching, a vaguely specified mechanism required by the 802.11 standard that is implemented in the hardware and software of the wireless NIC. We show that the implementation of this function influences the transmission patterns of a wireless stream, which are observable through traffic analysis. Our mechanism for NIC identification uses signal processing to analyze the periodicity embedded in the wireless traffic caused by rate switching. A stable spectral profile is created from the periodic components of the traffic and used for the identity of the wireless NIC. We show that we can distinguish between NICs manufactured by different vendors and NICs manufactured by the same vendor using their spectral profiles.

  10. Passive Classification of Wireless NICs during Rate Switching

    Directory of Open Access Journals (Sweden)

    Beyah RaheemA

    2008-01-01

    Full Text Available Abstract Computer networks have become increasingly ubiquitous. However, with the increase in networked applications, there has also been an increase in difficulty to manage and secure these networks. The proliferation of 802.11 wireless networks has heightened this problem by extending networks beyond physical boundaries. We propose the use of spectral analysis to identify the type of wireless network interface card (NIC. This mechanism can be applied to support the detection of unauthorized systems that use NICs which are different from that of a legitimate system. We focus on rate switching, a vaguely specified mechanism required by the 802.11 standard that is implemented in the hardware and software of the wireless NIC. We show that the implementation of this function influences the transmission patterns of a wireless stream, which are observable through traffic analysis. Our mechanism for NIC identification uses signal processing to analyze the periodicity embedded in the wireless traffic caused by rate switching. A stable spectral profile is created from the periodic components of the traffic and used for the identity of the wireless NIC. We show that we can distinguish between NICs manufactured by different vendors and NICs manufactured by the same vendor using their spectral profiles.

  11. On The Snubber Influence To The Switching And Conduction Losses In A Converter Using Switched Capacitor

    Directory of Open Access Journals (Sweden)

    Viorel DUGAN

    2002-12-01

    Full Text Available The paper deals to design and to compute the snubber parameters influence on the switching and conduction losses of the transistors (IGBT used as bidirectional switches in a converter with switched capacitor. The converter was modelled with difference equations, and the transistors during turn-on and turn-off processes were simulated by dynamically varying resistance models. The energy loss per switching, commutation time, the variation of the transistor voltage etc. and the influence of snubber parameters in each of these cases are shown in the context of a converter used as a 50Hz reactive power controller unit

  12. Microwave pulse generation by photoconductive switching

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L.

    1989-03-14

    Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories (1) the frozen wave generator or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200..mu..J optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency. 3 refs., 6 figs.

  13. Microwave pulse generation by photoconductive switching

    Science.gov (United States)

    Pocha, M. D.; Druce, R. L.

    1989-03-01

    Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories: (1) the frozen wave generator, or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200 microJ optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency.

  14. Tailoring design and fabrication of capacitive RF MEMS switches for K-band applications

    Science.gov (United States)

    Quaranta, Fabio; Persano, Anna; Capoccia, Giovanni; Taurino, Antonietta; Cola, Adriano; Siciliano, Pietro; Lucibello, Andrea; Marcelli, Romolo; Proietti, Emanuela; Bagolini, Alvise; Margesin, Benno; Bellutti, Pierluigi; Iannacci, Jacopo

    2015-05-01

    Shunt capacitive radio-frequency microelectromechanical (RF MEMS) switches were modelled, fabricated and characterized in the K-band domain. Design allowed to predict the RF behaviour of the switches as a function of the bridge geometric parameters. The modelled switches were fabricated on silicon substrate, using a surface micromachining approach. In addition to the geometric parameters, the material structure in the bridge-actuator area was modified for switches fabricated on the same wafer, thanks to the removal/addition of two technological steps of crucial importance for RF MEMS switches performance, which are the use of the sacrificial layer and the deposition of a floating metal layer on the actuator. Surface profilometry analysis was used to check the material layer structure in the different regions of the bridge area as well as to investigate the mechanical behaviour of the moveable bridge under the application of a loaded force. The RF behaviour of all the fabricated switches was measured, observing the impact on the isolation of the manipulation of the bridge size and of the variations in the fabrication process.

  15. Cost-effective method of manufacturing a 3D MEMS optical switch

    Science.gov (United States)

    Carr, Emily; Zhang, Ping; Keebaugh, Doug; Chau, Kelvin

    2009-02-01

    growth of data and video transport networks. All-optical switching eliminates the need for optical-electrical conversion offering the ability to switch optical signals transparently: independent of data rates, formats and wavelength. It also provides network operators much needed automation capabilities to create, monitor and protect optical light paths. To further accelerate the market penetration, it is necessary to identify a path to reduce the manufacturing cost significantly as well as enhance the overall system performance, uniformity and reliability. Currently, most MEMS optical switches are assembled through die level flip-chip bonding with either epoxies or solder bumps. This is due to the alignment accuracy requirements of the switch assembly, defect matching of individual die, and cost of the individual components. In this paper, a wafer level assembly approach is reported based on silicon fusion bonding which aims to reduce the packaging time, defect count and cost through volume production. This approach is successfully demonstrated by the integration of two 6-inch wafers: a mirror array wafer and a "snap-guard" wafer, which provides a mechanical structure on top of the micromirror to prevent electrostatic snap-down. The direct silicon-to-silicon bond eliminates the CTEmismatch and stress issues caused by non-silicon bonding agents. Results from a completed integrated switch assembly will be presented, which demonstrates the reliability and uniformity of some key parameters of this MEMS optical switch.

  16. Azo biphenyl polyurethane: Preparation, characterization and application for optical waveguide switch

    Science.gov (United States)

    Jiang, Yan; Da, Zulin; Qiu, Fengxian; Yang, Dongya; Guan, Yijun; Cao, Guorong

    2018-01-01

    Azo waveguide polymers are of particular interest in the design of materials for applications in optical switch. The aim of this contribution was the synthesis and thermo-optic waveguide switch properties of azo biphenyl polyurethanes. A series of monomers and azo biphenyl polyurethanes (Azo BPU1 and Azo BPU2) were synthesized and characterized by FT-IR, UV-Vis spectroscopy and 1H NMR. The physical and mechanical properties of thin polymer films were measured. The refractive index and thermo-optic coefficient (dn/dT) of polymer films were investigated for TE (transversal electric) polarizations by ATR technique. The transmission loss of film was measured using the Charge Coupled Device digital imaging devices. The results showed the Azo BPU2 containing chiral azobenzene chromophore had higher dn/dT and lower transmission loss. Subsequently, a 1 × 2 Y-branch and 2 × 2 Mach-Zehnder optical switches based on the prepared polymers were designed and simulated. The results showed that the power consumption of all switches was less than 1.0 mW. Compared with 1 × 2 Y-branch optical switch, the 2 × 2 Mach-Zehnder optical switches based on the same polymer have the faster response time, which were about only 1.2 and 2.0 ms, respectively.

  17. Switch/router architectures shared-bus and shared-memory based systems

    CERN Document Server

    Aweya, James

    2018-01-01

    A practicing engineer's inclusive review of communication systems based on shared-bus and shared-memory switch/router architectures. This book delves into the inner workings of router and switch design in a comprehensive manner that is accessible to a broad audience. It begins by describing the role of switch/routers in a network, then moves on to the functional composition of a switch/router. A comparison of centralized versus distributed design of the architecture is also presented. The author discusses use of bus versus shared-memory for communication within a design, and also covers Quality of Service (QoS) mechanisms and configuration tools. Written in a simple style and language to allow readers to easily understand and appreciate the material presented, Switch/Router Architectures: Shared-Bus and Shared-Memory Based Systems discusses the design of multilayer switches—starting with the basic concepts and on to the basic architectures. It describes the evolution of multilayer switch designs and highli...

  18. High-voltage high-current triggering vacuum switch

    International Nuclear Information System (INIS)

    Alferov, D.F.; Bunin, R.A.; Evsin, D.V.; Sidorov, V.A.

    2012-01-01

    Experimental investigations of switching and breaking capacities of the new high current triggered vacuum switch (TVS) are carried out at various parameters of discharge current. It has been shown that the high current triggered vacuum switch TVS can switch repeatedly a current from units up to ten kiloampers with duration up to ten millisecond [ru

  19. A new Zero-Voltage-Transition PWM switching cell

    Energy Technology Data Exchange (ETDEWEB)

    Grigore, V. [Electronics and Telecommunications Faculty `Politebuica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics

    1997-12-31

    In this paper a new Zero-Voltage-Transition (ZVT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus an auxiliary circuit (consisting of one active switch and some reactive components). The auxiliary circuit is inactive during the ON and OFF intervals of the switches in the normal PWM switch. However, the transitions between the two states are controlled by the auxiliary circuit. Prior to turn-on, the voltage across the active switch in the PWM cell is forced to zero, thus the turn-on losses of the active switch are practically eliminated. At turn-off the auxiliary circuit behaves like a non-dissipative passive snubber reducing the turn-off losses to a great extent. Zero-Voltage-Transition switching technique almost eliminates switching losses. The active switch operates under ZVT conditions, the passive switch (diode) has a controlled reverse recovery, and the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 6 refs.

  20. A high-switching-frequency flyback converter in resonant mode

    NARCIS (Netherlands)

    Li, Jianting; van Horck, Frank B.M.; Daniel, Bobby J.; Bergveld, Henk Jan

    2017-01-01

    The demand of miniaturization of power systems has accelerated the research on high-switching-frequency power converters. A flyback converter in resonant mode that features low switching losses, less transformer losses, and low switching noise at high switching frequency is investigated in this