Irradiation effects of swift heavy ions in matter

International Nuclear Information System (INIS)

Osmani, Orkhan

2011-01-01

In the this thesis irradiation effects of swift heavy ions in matter are studied. The focus lies on the projectiles charge exchange and energy loss processes. A commonly used computer code which employs rate equations is the so called ETACHA code. This computer code is capable to also calculate the required input cross-sections. Within this thesis a new model to compute the charge state of swift heavy ions is explored. This model, the so called matrix method, takes the form of a simple algebraic expression, which also requires cross-sections as input. In the present implementation of the matrix method, cross-sections are taken from the ETACHA code, while excitation and deexcitation processes are neglected. Charge fractions for selected ion/target combinations, computed by the ETACHA code and the matrix method are compared. It is shown, that for sufficient large ion energies, both methods agree very well with each other. However, for lower energies pronounced differences are observed. These differences are believed to stem from the fact, that no excited states as well as the decay of theses excited states are included in the present implementation of the matrix method. Both methods are then compared with experimental measurements, where significant deviations are observed for both methods. While the predicted equilibrium charge state by both methods is in good agreement with the experiments, the matrix method predicts a much too large equilibrium thickness compared to both the ETACHA calculation as well as the experiment. Again, these deviations are believed to stem from the fact, that excitation and the decay of excited states are not included in the matrix method. A possible way to include decay processes into the matrix method is presented, while the accuracy of the applied capture cross-sections is tested by comparison with scaling rules. Swift heavy ions penetrating a dielectric are known to induced structural modifications both on the surface and in the bulk

The effects of swift heavy ion irradiation on the structural properties of poly(lactide-co-glycolide)/clay nanocomposite

Energy Technology Data Exchange (ETDEWEB)

Kaur, Manpreet, E-mail: manpreet.kaur@abesit.in [ABES Institute of Technology,Ghaziabad, Uttar Pradesh (India); Singh, Surinder [Department of Physics, Guru Nanak Dev University, Amritsar (India); Mehta, Rajeev [Department of Chemical Engineering, Thapar University, Patiala (India)

2016-05-23

Radiation has been used as a processing technique to modify structural, chemical, physical and morphological properties of polymers and its nanocomposite and can thus be used as a method to control the rate of degradation. The swift heavy ions (SHI) irradiation effects on the structural properties of poly(lactide-co-glycolide) nanocomposites containing 5 wt% organo-montmorillonite (OMMT) clay by irradiating with 50 MeV Li{sup 3+} and 180 MeV Ag{sup 8+} ions has been studied at different fluences. The structural responses of PLGA nanocomposite under the influence of SHI were studied using Fourier transform infrared (FTIR) spectroscopy. The presence of clay and irradiation by swift heavy ions (SHI) brings out interesting changes in structural properties of nanocomposite.

Study of the point defect creation and of the excitonic luminescence in alkali halides irradiated by swift heavy ions

International Nuclear Information System (INIS)

Protin, L.

1994-01-01

The aim of this experimental thesis is to study the excitonic mechanisms and of the defect creation, in NaCl and KBr, under dense electronic excitations induced by swift heavy ion irradiations. In the first part, we present the main features of the interaction of swift heavy ions with solid targets, and after we review the well known radiolytic processes of the defect creation during X-ray irradiation. In the second chapter, we describe our experimental set-up. In the chapter III, we present our results of the in-situ optical absorption measurements. This results show that defect creation is less sensitive to the temperature than during a classical irradiation. Besides, we observe new mechanisms concerning the defect aggregation. In the chapter IV, we present the results of excitonic luminescence induced by swift by swift heavy ions. We observe that the luminescence yields only change with the highest electronic stopping power. In the chapter V, we perform thermal spike and luminescence yields calculations and we compare the numerical results to the experiments presented in the chapter IV. (author). 121 refs., 65 figs., 30 tabs

Structural characterization of swift heavy ion irradiated polycarbonate

International Nuclear Information System (INIS)

Singh, Lakhwant; Samra, Kawaljeet Singh

2007-01-01

Makrofol-N polycarbonate thin films were irradiated with copper (50 MeV) and nickel (86 MeV) ions. The modified films were analyzed by UV-VIS, FTIR and XRD techniques. The experimental data was used to evaluate the formation of chromophore groups (conjugated system of bonds), degradation cross-section of the special functional groups, the alkyne formation and the amorphization cross-section. The investigation of UV-VIS spectra shows that the formation of chromophore groups is reduced at larger wavelength, however its value increases with the increase of ion fluence. Degradation cross-section for the different chemical groups present in the polycarbonate chains was evaluated from the FTIR data. It was found that there was an increase of degradation cross-section of chemical groups with the increase of electronic energy loss in polycarbonate. The alkyne and alkene groups were found to be induced due to swift heavy ion irradiation in polycarbonate. The radii of the alkyne production of about 2.74 and 2.90 nm were deduced for nickel (86 MeV) and copper (50 MeV) ions respectively. XRD analysis shows the decrease of the main XRD peak intensity. Progressive amorphization process of Makrofol-N with increasing fluence was traced by XRD measurements

Defect induced modification of structural, topographical and magnetic properties of zinc ferrite thin films by swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Raghavan, Lisha [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India); Inter University Accelerator Center, New Delhi 110067 (India); Joy, P.A. [National Chemical Laboratory, Pune (India); Vijaykumar, B. Varma; Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Anantharaman, M.R., E-mail: mraiyer@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India)

2017-04-01

Highlights: • Zinc ferrite films exhibited room temperature ferrimagnetic property. • On ion irradiation amorphisation of films were observed. • The surface morphology undergoes changes with ion irradiation. • The saturation magnetisation decreases on ion irradiation. - Abstract: Swift heavy ion irradiation provides unique ways to modify physical and chemical properties of materials. In ferrites, the magnetic properties can change significantly as a result of swift heavy ion irradiation. Zinc ferrite is an antiferromagnet with a Neel temperature of 10 K and exhibits anomalous magnetic properties in the nano regime. Ion irradiation can cause amorphisation of zinc ferrite thin films; thus the role of crystallinity on magnetic properties can be examined. The influence of surface topography in these thin films can also be studied. Zinc ferrite thin films, of thickness 320 nm, prepared by RF sputtering were irradiated with 100 MeV Ag ions. Structural characterization showed amorphisation and subsequent reduction in particle size. The change in magnetic properties due to irradiation was correlated with structural and topographical effects of ion irradiation. A rough estimation of ion track radius is done from the magnetic studies.

Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Hu, P.P. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Liu, J., E-mail: J.Liu@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Zhang, S.X. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Maaz, K. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Nanomaterials Research Group, Physics Division, PINSTECH, Nilore, 45650 Islamabad (Pakistan); Zeng, J. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Guo, H. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Zhai, P.F.; Duan, J.L.; Sun, Y.M.; Hou, M.D. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China)

2016-04-01

InP crystals and GaN films were irradiated by swift heavy ions {sup 86}Kr and {sup 209}Bi with kinetic energies of 25 and 9.5 MeV per nucleon and ion fluence in the range 5 × 10{sup 10} to 3.6 × 10{sup 12} ions/cm{sup 2}. The characteristic optical bands were studied by Raman spectroscopy to reveal the disorder and defects induced in the samples during the irradiation process. The crystallinity of InP and GaN was found to be deteriorated after irradiation by the swift heavy ions and resulted in the amorphous nature of the samples along the ion tracks. The amorphous tracks observed by transmission electron microscopy (TEM) images confirmed the formation of lattice defects. In typical F{sub 2}(LO) mode, in case of InP, the spectra shifted towards the lower wavenumbers with a maximum shift of 7.6 cm{sup −1} induced by 1030 MeV Bi ion irradiation. While in case of GaN, the typical E{sub 2}(high) mode shifted towards the higher wavenumbers, with maximum shift of 5.4 cm{sup −1} induced by 760 MeV Bi ion irradiation at ion fluence of 1 × 10{sup 12} ions/cm{sup 2}. The observed Raman shifts reveal the presence of lattice defects and disorder induced in the samples after irradiation by the swift heavy ions. This irradiation also generated lattice stress in the samples, which has been investigated and discussed in detail in this work.

Capillaric penetration of etchant solution into swift heavy ion-irradiated silicone rubber

International Nuclear Information System (INIS)

Fink, D.; Mueller, M.

2000-01-01

There is growing evidence that etchants penetrate into latent ion tracks in polymers from the very beginning, i.e., even during the so-called 'incubation time' when no visible etchant attack is observed. The model of capillaric penetration of viscous liquids into sponge-like matter agrees with experimental values both in their parametric dependence as in the absolute values. Our experiments are based on LiOH etching of both pristine and swift heavy ion-irradiated silicone rubber foils. About five times more etchant penetrates into irradiated than into pristine silicone rubber. The overall etchant penetration is highest in tracks parallel to the surface normal, and decreases with increasing ion track tilt angle towards the surface normal. The etchant penetration into the tracks proceeds relatively slowly with an effective viscosity comparable to that of heavy machine oil. When swelling starts to predominate, the maximum etchant penetration depth comes to saturation, with the total etchant uptake even decreasing

Alkyne End Group Production in Polymeric Materials Induced by Swift Heavy Ion Irradiations

Institute of Scientific and Technical Information of China (English)

无

2001-01-01

Swift heavy ions in matter lose energy mainly through electronic processes.Since the energy deposition is centered in a very small region with a very high energy density,new effects such as production of alkyne end group can be induced.In this work,PET,PS,PC and PI films are irradiated with Ar,Kr,Xe and U ions and the relationship of the alkyne end group production with electronic energy loss is studied by Fourier transformed infrared infrared(FTLR)spectra measurements.

Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

Science.gov (United States)

Kumar, Sunil; Kumar, Ashish; Tripathi, Ambuj; Tyagi, Chetna; Avasthi, D. K.

2018-04-01

In this work, swift heavy ion irradiation induced effects on the electrical properties of single layer graphene are reported. The modulation in minimum conductivity point in graphene with in-situ electrical measurement during ion irradiation was studied. It is found that the resistance of graphene layer decreases at lower fluences up to 3 × 1011 ions/cm2, which is accompanied by the five-fold increase in electron and hole mobilities. The ion irradiation induced increase in electron and hole mobilities at lower fluence up to 1 × 1011 ions/cm2 is verified by separate Hall measurements on another irradiated graphene sample at the selected fluence. In contrast to the adverse effects of irradiation on the electrical properties of materials, we have found improvement in electrical mobility after irradiation. The increment in mobility is explained by considering the defect annealing in graphene after irradiation at a lower fluence regime. The modification in carrier density after irradiation is also observed. Based on findings of the present work, we suggest ion beam irradiation as a useful tool for tuning of the electrical properties of graphene.

Structural stability of C60 films under irradiation with swift heavy ions

International Nuclear Information System (INIS)

Jin Yunfan; Yao Cunfeng; Wang Zhiguang; Xie Erqing; Song Yin; Sun Youmei; Zhang Chonghong; Liu Jie; Duan Jinglai

2005-01-01

In order to investigate the structural stability of fullerene (C 60 ) under swift heavy ion irradiation, the irradiation experiments of thin C 60 films were performed with 22 MeV/amu Fe 56 ions delivered by HIRFL at Lanzhou in China. The irradiated C 60 films were analyzed by means of Raman scattering and Fourier transform infrared (FTIR) spectroscopes. The analysis results indicated that the damage cross-sections σ of the C 60 molecule deduced from the data of the Raman spectra are between 1.1 and 4.5 x 10 -14 cm 2 for the electronic energy loss from 3.5 to 8.7 keV/nm and electronic energy transfer dominates the damage process of C 60 films. The partial recovery of the damage in irradiated C 60 films at certain electronic energy loss is attributed to an annealing effect of strong electronic excitation

Development of Nanoporous Polymer Membranes by Swift Heavy Ion Irradiation

Science.gov (United States)

Dinesh, Divya; Predeep, P.

2011-10-01

This study reveals the preparation of conical pores in polyethylene terephthalate (PET) by track etching. The polymer membrane is etched from one side by keeping between the clamps of conductivity cell followed by irradiation with swift heavy ion of 197Au. Electrical stopping supports chemical stopping. During etching process current is measured as a function of time till a sharp increase -breakthrough-observed. After etching membranes are thoroughly washed with stopping solution and water. Resultant films are characterized using Optical microscope and field emission scanning electron microscopy. Polymer films with uniform pores can be a cheaper templating material in the fields of photonic crystals and micro- electronics.

Defects induced by swift heavy ions in the 18R martensite of Cu-Zn-Al alloy

International Nuclear Information System (INIS)

Zelaya, Eugenia; Tolley, Alfredo; Condo, Adriana; Lovey, Francisco; Schumacher, G

2003-01-01

The swift heavy ion incidence over the surface of a given material produces a strong energy deposition in a nanometric scale.Swift heavy ions, of the order of one thousand of MeV, deposit their energy as electronic excitations.This highly localized deposition can induce metastable transformations within the material. For example, in martensitic NiTi alloys irradiated with swift heavy ions, it has been observed changes on the martensitic transformation temperature and amorphous areas induced by the irradiation.In this work, the effects produced by swift heavy ions on the martensitic 18R structure of Cu-Zn-Al alloy (Cu - 12.17 Zn - 17.92 Al, in %at) were analyzed.Crystalline samples were irradiated in a direction close to the [2 1 0] of 18R with Xe + 230 MeV, Au + of 350 MeV and Kr + of 200 MeV ion beams.Defects of the order of nanometers induced by the irradiation were observed by transmission electron microscopy (TEM) and high resolution electron microscopy (HREM).It was also observed, that the average size of the irradiation defects induced by Au + ion is larger than those induced by Xe + and Kr + ions.In this case, no relationship between the observed defects and the energy deposition was found in the 23 keV/nn to 48 keV/nn range

Saturation of plastic deformation by swift heavy ion irradiation: Ion hammering vs. surface effects

Energy Technology Data Exchange (ETDEWEB)

Ferhati, Redi; Dautel, Knut; Bolse, Wolfgang [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart (Germany); Fritzsche, Monika [Helmholtz-Zentrum Dresden-Rossendorf (Germany)

2012-07-01

Swift heavy ion (SHI) induced plastic deformation is a subject of current research and scientific discussion. This *Ion Hammering* phenomenon was first observed 30 years ago in amorphous materials like metallic glasses. About 10 years ago, Feyh et al. have shown that stress generation and *Ion Hammering* result in self-organization of thin NiO-films on Si-wafers into a sub-micron lamellae-like structure under grazing angle irradiation. The growth of the lamellae was found to saturate as soon as they have reached a thickness of a few hundreds of nm. Here we show our latest results on the restructuring of pre-patterned thin oxide films by SHI under various irradiation conditions. The experiments were performed by employing (in-situ) scanning electron microscopy, and were complemented by (in-situ) energy dispersive x-ray analysis and atomic force microscopy. As we will show, the saturation behavior can be understood as a competition of *Ion Hammering* and surface energy effects, while the unexpected fact, that the initially crystalline films undergo *Ion Hammering* can possibly be attributed to oxygen loss and thus amorphization during irradiation.

Swift heavy ion irradiation effects on carbonyl and trans-vinylene groups in high and low density polyethylene

International Nuclear Information System (INIS)

Grosso, M.F. del; Chappa, V.C.; Arbeitman, C.R.; Garcia Bermudez, G.; Behar, M.

2009-01-01

In this work, we have studied the effects of swift heavy ion irradiation on the creation of new functional groups in high and low density polyethylene (HDPE and LDPE). Polymers were irradiated with different ions (6.77 MeV He and 47 MeV Li) and fluences. The induced changes were analyzed by Fourier transform infrared (FTIR) spectroscopy. Creation and damage cross sections for some groups were compared for two different types of PE.

Swift heavy ion irradiation effects on carbonyl and trans-vinylene groups in high and low density polyethylene

Energy Technology Data Exchange (ETDEWEB)

Grosso, M.F. del, E-mail: delgrosso@tandar.cnea.gov.a [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); Chappa, V.C. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); CONICET (Argentina); Arbeitman, C.R. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); Garcia Bermudez, G. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); CONICET (Argentina); Escuela de Ciencia y Tecnologia, UNSAM (Argentina); Behar, M. [Instituto de Fisica, UFRGS, Porto Alegre (Brazil)

2009-10-01

In this work, we have studied the effects of swift heavy ion irradiation on the creation of new functional groups in high and low density polyethylene (HDPE and LDPE). Polymers were irradiated with different ions (6.77 MeV He and 47 MeV Li) and fluences. The induced changes were analyzed by Fourier transform infrared (FTIR) spectroscopy. Creation and damage cross sections for some groups were compared for two different types of PE.

Raman spectroscopic investigations of swift heavy ion irradiation effects in single-walled carbon nanotubes

International Nuclear Information System (INIS)

Olejniczak, A.; Skuratov, V.A.; Lukaszewicz, J.P.

2013-01-01

In this study, we report the results on swift heavy ion irradiation effects in single-walled carbon nanotubes (SWNTs). Buckypapers, prepared of CVD grown, SWNTs were irradiated at room temperature with 167 MeV Xe ions to fluences in the range of 6×10 11 - 6.5×10 13 cm -2 and investigated using Raman spectroscopy. We observed a rich set of features in the intermediate frequency mode region. Some of them, being defect-induced, resembled fairly well the phonon density of states (DOS) of nanocrystalline glassy carbon. Analysis of the RBM modes has shown that the broader metallic tubes are characterized by higher radiation stability than thinner semiconducting ones. (authors)

Electron emission from solids induced by swift heavy ions

International Nuclear Information System (INIS)

Xiao Guoqing

2000-01-01

The recent progresses in experimental and theoretical studies of the collision between swift heavy ion and solids as well as electron emission induced by swift heavy ion in solids were briefly reviewed. Three models, Coulomb explosion, thermal spike and repulsive long-lived states, for interpreting the atomic displacements stimulated by the electronic energy loss were discussed. The experimental setup and methods for measuring the electron emission from solids were described. The signification deviation from a proportionality between total electron emission yields and electronic stopping power was found. Auger-electron and convoy-electron spectra are thought to be a probe for investigating the microscopic production mechanisms of the electronic irradiation-damage. Electron temperature and track potential at the center of nuclear tracks in C and polypropylene foils induced by 5 MeV/u heavy ions, which are related to the electronic excitation density in metals and insulators respectively, were extracted by measuring the high resolution electron spectra

Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

International Nuclear Information System (INIS)

Sharma, A. Tarun; Shahnawaz; Kumar, Sandeep; Katharria, Yashpal S.; Kanjilal, Dinakar

2007-01-01

Metal-semiconductor diode of Au/n-GaAs is studied under the irradiation of swift heavy ion (SHI) beam (80 MeV 16 O 6+ ), using in situ current-voltage characterization technique. The diode parameters like ideality factor, barrier height, and leakage current are observed to vary with irradiation fluence. Significantly, the diode performance improves at a high fluence of 2 x 10 13 ions cm -2 with a large decrease of reverse leakage current in comparison to the original as deposited sample. The Schottky barrier height (SBH) also increases with fluence. At a high irradiation fluence of 5 x 10 13 ions cm -2 the SBH (0.62 ± 0.01 eV) is much larger than that of the as deposited sample (0.55 ± 0.01 eV). The diode parameters remain stable over a large range of irradiation up to fluence of 8 x 10 13 ions cm -2 . A prominent annealing effect of the swift ion beam owing to moderate electronic excitation and high ratio of electronic energy loss to the nuclear loss is found to be responsible for the improvement in diode characteristics

Defect production and subsequent effects induced by electronic energy loss of swift heavy ion

International Nuclear Information System (INIS)

Hou Mingdong; Liu Jie; Sun Youmei; Yin Jingmin; Yao Huijun; Duan Jinglai; Mo Dan; Zhang Ling; Chen Yanfeng; Chinese Academy of Sciences, Beijing

2008-01-01

Swift heavy ion in matter is one of forfront fields of nuclear physics in the world. A series of new phenomena were discovered in recent years. The history and sta- tus on the development of this field were reviewed. Electronic energy loss effects induced by swift heavy ion irradiation, such as defect production and evolution, ion latent track formation, phase transformation and anisotropy plastic deformation were introduced emphatically. A trend of future investigation was explored. (authors)

Hydration effect on ion exchange resin irradiated by swift heavy ions and gamma rays

Science.gov (United States)

Boughattas, I.; Labed, V.; Gerenton, A.; Ngono-Ravache, Y.; Dannoux-Papin, A.

2018-06-01

Gamma radiolysis of ion exchange resins (IER) is widely studied since the sixties, as a function of different parameters (resin type, dose, atmosphere, water content …). However, to our knowledge, there are very few data concerning hydrogen emission from anionic and cationic resins irradiated at high Linear Energy Transfers (LET). In the present work, we focus on the influence of hydration on hydrogen emission, in anionic and cationic resins irradiated under inert atmosphere using Swift Heavy Ions (SHI) and gamma irradiations. The radiation chemical yield of molecular hydrogen is nonlinear with water content for both resins. The molecular hydrogen production depends first on the water form in IER (free or linked) and second on the solubility of degradation products. Three steps have been observed: at lower water content where G(H2) is stable, at 50%, G(H2) increases due to reactions between water radiolytic species and the resin functional groups and at high water content, G(H2) decreases probably due to its accumulation in water and its consumption by hydroxyl radicals in the supernatant.

Modification of phase transitions in swift heavy ion irradiated and MMA-grafted ferroelectric fluoro-polymers

International Nuclear Information System (INIS)

Petersohn, E.; Betz, N.; Le Moel, A.

1994-01-01

Ferroelectric polyvinylidene fluoride (β) and copolymers of vinylidene fluoride trifluoroethylene (P(VDF/TrFE)) films were irradiated with swift heavy ions and post irradiation grafted with methyl methacrylate (MMA). We have studied the influence of irradiation parameters such as the ion fluence, the type of ion and the electronic stopping power, on the melting and crystallization temperatures and the ferroelectric-paraelectric phase transitions, by differential scanning calorimetry (DSC) and dielectric measurements. The relation between the shift in the transition temperatures and the ion fluence is described by a single term equation. Ion track grafting with MMA affects the ferroelectric-paraelectric phase transitions in P(VDF/TrFE) and leads to a strong amorphization of the polymer films. The grafting in β PVDF occurs mainly on the surface of the samples and no change in the transition temperatures is observed. (authors). 12 refs., 6 figs., 2 tabs

In-situ investigations of surface modifications by swift heavy ions

International Nuclear Information System (INIS)

Bolse, W.; Sankarakumar, A.; Ferhati, R.; Garmatter, D.; Haag, M.; Dautel, K.; Asdi, M.; Srivastava, N.; Widmann, B.; Bauer, M.

2014-01-01

We are running a High Resolution Scanning Electron Microscope in the beam line of the UNILAC ion accelerator at the GSI Helmholtz Centre for Heavy Ion Research in Danustadt, Germany, which has recently been extended also with an EDX-system and two micro-manipulators. This instrument allows us to in-situ investigate the structural and compositional development of individual objects and structures in the μm- and nm-range under swift heavy ion bombardment, from the very first ion impact up to high fluences of the order of several 10 15 /cm 2 . The sample under investigation is irradiated in small fluence steps and in between SEM-images (and EDX-scans) of one and the same surface area are taken. The irradiation can be carried out at any incidence angle between 0° and 90° and also under stepwise or continuous azimuthal rotation of the sample. The micro-manipulator system allows us to perform additional analysis like electrical and mechanical characterization as well as substrate-free EDX at sub-μm objects. We are now also able to irradiate almost free standing sub-μm structures (pasted on a nanoscale tip or held in micro-tweezers). In this report an overview over this unique instrument and its capabilities and advantages will be given, illustrated by the results of our recent in-situ studies on ion induced modification of thin films (dewetting and self-organisation) and on shaping of sub-μm objects with swift heavy ions (by taking advantage of ion sputtering, ion hammering and ion induced visco-elastic flow). (author)

Rapid thermal and swift heavy ion induced annealing of Co ion implanted GaN films

International Nuclear Information System (INIS)

Baranwal, V.; Pandey, A. C.; Gerlach, J. W.; Rauschenbach, B.; Karl, H.; Kanjilal, D.; Avasthi, D. K.

2008-01-01

Thin epitaxial GaN films grown on 6H-SiC(0001) substrates were implanted with 180 keV Co ions at three different fluences. As-implanted samples were characterized with secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain the Co depth profiles and the maximum Co concentrations. As-implanted samples were annealed applying two different techniques: rapid thermal annealing and annealing by swift heavy ion irradiation. Rapid thermal annealing was done at two temperatures: 1150 deg. C for 20 s and 700 deg. C for 5 min. 200 MeV Ag ions at two fluences were used for annealing by irradiation. Crystalline structure of the pristine, as-implanted, and annealed samples was investigated using x-ray diffraction, and the results were compared. Improvement of the crystalline quality was observed for rapid thermal annealed samples at the higher annealing temperature as confirmed with rocking curve measurements. The results indicate the presence of Co clusters in these annealed samples. Swift heavy ion irradiation with the parameters chosen for this study did not lead to a significant annealing

Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

Science.gov (United States)

Paliwal, Ayushi; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

2016-07-01

Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO3 (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol-gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au9+ ions at a fluence of 1 × 1012 ions cm-2. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

International Nuclear Information System (INIS)

Singh, Hemant Kr.; Avasthi, D.K.; Aggarwal, Shruti

2015-01-01

Highlights: •The objective is to study the effect of swift heavy ion (SHI) irradiation on photoanode of DSSC for better efficiency. •This work presents the effect of SHI irradiation on various Transparent conducting oxides (TCOs). •Effects are studied in terms of conductivity and transmittance of TCOs. •ITO-PET gives best results in comparison to ITO and FTO for DSSC application under SHI irradiation. -- Abstract: Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO 2 :F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In 2 O 3 :Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag +9 ions at fluences ranging from 3.0 × 10 11 ions/cm 2 to 3.0 × 10 13 ions/cm 2 . The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications

In-situ high temperature irradiation setup for temperature dependent structural studies of materials under swift heavy ion irradiation

International Nuclear Information System (INIS)

Kulriya, P.K.; Kumari, Renu; Kumar, Rajesh; Grover, V.; Shukla, R.; Tyagi, A.K.; Avasthi, D.K.

2015-01-01

An in-situ high temperature (1000 K) setup is designed and installed in the materials science beam line of superconducting linear accelerator at the Inter-University Accelerator Centre (IUAC) for temperature dependent ion irradiation studies on the materials exposed with swift heavy ion (SHI) irradiation. The Gd 2 Ti 2 O 7 pyrochlore is irradiated using 120 MeV Au ion at 1000 K using the high temperature irradiation facility and characterized by ex-situ X-ray diffraction (XRD). Another set of Gd 2 Ti 2 O 7 samples are irradiated with the same ion beam parameter at 300 K and simultaneously characterized using in-situ XRD available in same beam line. The XRD studies along with the Raman spectroscopic investigations reveal that the structural modification induced by the ion irradiation is strongly dependent on the temperature of the sample. The Gd 2 Ti 2 O 7 is readily amorphized at an ion fluence 6 × 10 12 ions/cm 2 on irradiation at 300 K, whereas it is transformed to a radiation-resistant anion-deficient fluorite structure on high temperature irradiation, that amorphized at ion fluence higher than 1 × 10 13 ions/cm 2 . The temperature dependent ion irradiation studies showed that the ion fluence required to cause amorphization at 1000 K irradiation is significantly higher than that required at room temperature irradiation. In addition to testing the efficiency of the in-situ high temperature irradiation facility, the present study establishes that the radiation stability of the pyrochlore is enhanced at higher temperatures

Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Singh, Hemant Kr. [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi (India); Avasthi, D.K. [Inter University Accelerator Center, Post Box 10502, New Delhi (India); Aggarwal, Shruti, E-mail: shruti.al@gmail.com [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi (India)

2015-06-15

Highlights: •The objective is to study the effect of swift heavy ion (SHI) irradiation on photoanode of DSSC for better efficiency. •This work presents the effect of SHI irradiation on various Transparent conducting oxides (TCOs). •Effects are studied in terms of conductivity and transmittance of TCOs. •ITO-PET gives best results in comparison to ITO and FTO for DSSC application under SHI irradiation. -- Abstract: Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO{sub 2}:F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In{sub 2}O{sub 3}:Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag{sup +9} ions at fluences ranging from 3.0 × 10{sup 11} ions/cm{sup 2} to 3.0 × 10{sup 13} ions/cm{sup 2}. The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications.

Swift heavy ions induced surface modifications in Ag-polypyrrole composite films synthesized by an electrochemical route

International Nuclear Information System (INIS)

Kumar, Vijay; Ali, Yasir; Sharma, Kashma; Kumar, Vinod; Sonkawade, R.G.; Dhaliwal, A.S.; Swart, H.C.

2014-01-01

Highlights: • Two steps electrochemical synthesis for the fabrication of Ag-polypyrrole composite films. • Surface modifications by swift heavy ion beam. • SEM image shows the formation of craters and humps after irradiation. • Detailed structural analysis by Raman spectroscopy. - Abstract: The general aim of this work was to study the effects of swift heavy ions on the properties of electrochemically synthesized Ag-polypyrrole composite thin films. Initially, polypyrrole (PPy) films were electrochemically synthesized on indium tin oxide coated glass surfaces using a chronopotentiometery technique, at optimized process conditions. The prepared PPy films have functioned as working electrodes for the decoration of submicron Ag particles on the surface of the PPy films through a cyclicvoltammetry technique. Towards probing the effect of swift heavy ion irradiation on the structural and morphological properties, the composite films were subjected to a 40 MeV Li 3+ ion beam irradiation for various fluences (1 × 10 11 , 1 × 10 12 and 1 × 10 13 ions/cm 2 ). Comparative microstructural investigations were carried out after the different ion fluences using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy and micro-Raman spectroscopy techniques. Raman and SEM studies revealed that the structure of the films became disordered after irradiation. The SEM studies of irradiated composite films show significant changes in their surface morphologies. The surface was smoother at lower fluence but craters were observed at higher fluence

Swift heavy ions induced surface modifications in Ag-polypyrrole composite films synthesized by an electrochemical route

Energy Technology Data Exchange (ETDEWEB)

Kumar, Vijay, E-mail: vijays_phy@rediffmail.com [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Ali, Yasir [Department of Physics, Sant Longowal Institute of Engineering and Technology, Longowal, District Sangrur 148106, Punjab (India); Sharma, Kashma [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Department of Chemistry, Shoolini University of Biotechnology and Management Sciences, Solan 173212 (India); Kumar, Vinod [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Sonkawade, R.G. [Inter University Accelerator Center, Aruna Asif Ali Marg, New Delhi 110067 (India); Dhaliwal, A.S. [Department of Physics, Sant Longowal Institute of Engineering and Technology, Longowal, District Sangrur 148106, Punjab (India); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa)

2014-03-15

Highlights: • Two steps electrochemical synthesis for the fabrication of Ag-polypyrrole composite films. • Surface modifications by swift heavy ion beam. • SEM image shows the formation of craters and humps after irradiation. • Detailed structural analysis by Raman spectroscopy. - Abstract: The general aim of this work was to study the effects of swift heavy ions on the properties of electrochemically synthesized Ag-polypyrrole composite thin films. Initially, polypyrrole (PPy) films were electrochemically synthesized on indium tin oxide coated glass surfaces using a chronopotentiometery technique, at optimized process conditions. The prepared PPy films have functioned as working electrodes for the decoration of submicron Ag particles on the surface of the PPy films through a cyclicvoltammetry technique. Towards probing the effect of swift heavy ion irradiation on the structural and morphological properties, the composite films were subjected to a 40 MeV Li{sup 3+} ion beam irradiation for various fluences (1 × 10{sup 11}, 1 × 10{sup 12} and 1 × 10{sup 13} ions/cm{sup 2}). Comparative microstructural investigations were carried out after the different ion fluences using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy and micro-Raman spectroscopy techniques. Raman and SEM studies revealed that the structure of the films became disordered after irradiation. The SEM studies of irradiated composite films show significant changes in their surface morphologies. The surface was smoother at lower fluence but craters were observed at higher fluence.

Development of dual-beam system using an electrostatic accelerator for in-situ observation of swift heavy ion irradiation effects on materials

Science.gov (United States)

Matsuda, M.; Asozu, T.; Sataka, M.; Iwase, A.

2013-11-01

We have developed the dual beam system which accelerates two kinds of ion beams simultaneously especially for real-time ion beam analysis. We have also developed the alternating beam system which can efficiently change beam species in a short time in order to realize efficient ion beam analysis in a limited beam time. The acceleration of the dual beam is performed by the 20 UR Pelletron™ tandem accelerator in which an ECR ion source is mounted at the high voltage terminal [1,2]. The multi-charged ions of two or more elements can be simultaneously generated from the ECR ion source, so dual-beam irradiation is achieved by accelerating ions with the same charge to mass ratio (for example, 132Xe11+ and 12C+). It enables us to make a real-time beam analysis such as Rutherford Back Scattering (RBS) method, while a target is irradiated with swift heavy ions. For the quick change of the accelerating ion beam, the program of automatic setting of the optical parameter of the accelerator has been developed. The switchover time for changing the ion beam is about 5 min. These developments have been applied to the study on the ion beam mixing caused by high-density electronic excitation induced by swift heavy ions.

Development of dual-beam system using an electrostatic accelerator for in-situ observation of swift heavy ion irradiation effects on materials

Energy Technology Data Exchange (ETDEWEB)

Matsuda, M., E-mail: matsuda.makoto@jaea.go.jp [Japan Atomic Energy Agency (JAEA-Tokai), Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Asozu, T.; Sataka, M. [Japan Atomic Energy Agency (JAEA-Tokai), Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Iwase, A. [Department of Materials Science, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531 (Japan)

2013-11-01

We have developed the dual beam system which accelerates two kinds of ion beams simultaneously especially for real-time ion beam analysis. We have also developed the alternating beam system which can efficiently change beam species in a short time in order to realize efficient ion beam analysis in a limited beam time. The acceleration of the dual beam is performed by the 20 UR Pelletron™ tandem accelerator in which an ECR ion source is mounted at the high voltage terminal [1,2]. The multi-charged ions of two or more elements can be simultaneously generated from the ECR ion source, so dual-beam irradiation is achieved by accelerating ions with the same charge to mass ratio (for example, {sup 132}Xe{sup 11+} and {sup 12}C{sup +}). It enables us to make a real-time beam analysis such as Rutherford Back Scattering (RBS) method, while a target is irradiated with swift heavy ions. For the quick change of the accelerating ion beam, the program of automatic setting of the optical parameter of the accelerator has been developed. The switchover time for changing the ion beam is about 5 min. These developments have been applied to the study on the ion beam mixing caused by high-density electronic excitation induced by swift heavy ions.

Modification of thin-layer systems by swift heavy ions

International Nuclear Information System (INIS)

Bolse, W.; Schattat, B.; Feyh, A.

2003-01-01

The electronic energy loss of swift heavy ions (MeV/amu) within a solid results in a highly excited cylindrical zone of some nm in diameter, within which all atoms may be in motion for some tens of ps (transient local melting). After cooling down, a defect-rich or even amorphous latent track is left in many cases, especially in insulating materials. The resulting property alterations (density, micro-structure, morphology, phase composition, etc.) have been investigated for many bulk materials, while only very few experiments have been carried out with thin-film systems. In the present paper, a summary will be given of our studies on the transport of matter in thin-film packages induced by irradiation with high-energy ions. These is, on the one hand, atomic mixing at the interfaces, which is especially pronounced in ceramic systems and which seems to occur by interdiffusion in the molten ion track. On the other hand, we have discovered a self-organisation phenomenon in swift-heavy-ion-irradiated NiO layers, which at low fluences first showed periodic cracking perpendicular to the projected beam direction. After application of high fluences, the NiO layer was reorganised in 100-nm-thick and 1-μm-high NiO lamellae of the same separation distance (1-3 μm) and orientation as found for the cracks. Both effects can be attributed to transient melting of the material surrounding the ion trajectory. (orig.)

Enhanced AC conductivity and dielectric relaxation properties of polypyrrole nanoparticles irradiated with Ni12+ swift heavy ions

International Nuclear Information System (INIS)

Hazarika, J.; Kumar, A.

2014-01-01

In this paper, we report the 160 MeV Ni 12+ swift heavy ions (SHIs) irradiation effects on AC conductivity and dielectric relaxation properties of polypyrrole (PPy) nanoparticles in the frequency range of 42 Hz–5 MHz. Four ion fluences of 5 × 10 10 , 1 × 10 11 , 5 × 10 11 and 1 × 10 12 ions/cm 2 have been used for the irradiation purpose. Transport properties in the pristine and irradiated PPy nanoparticles have been investigated with permittivity and modulus formalisms to study the polarization effects and conductivity relaxation. With increasing ion fluence, the relaxation peak in imaginary modulus (M ″ ) plots shifts toward high frequency suggesting long range motion of the charge carriers. The AC conductivity studies suggest correlated barrier hopping as the dominant transport mechanism. The hopping distance (R ω ) of the charge carriers decreases with increasing the ion fluence. Binding energy (W m ) calculations depict that polarons are the dominant charge carriers

Effect of heavy ion irradiation on C 60

Science.gov (United States)

Lotha, S.; Ingale, A.; Avasthi, D. K.; Mittal, V. K.; Mishra, S.; Rustagi, K. C.; Gupta, A.; Kulkarni, V. N.; Khathing, D. T.

1999-06-01

Thin films of C 60 were subjected to swift heavy ion irradiation spanning the region from 2 to 11 keV/nm of electronic excitation. Studies of the irradiated films by Raman spectroscopy indicated polymerization and damage of the film with an ion fluence. The ion track radii are estimated for various ions using the Raman data. Photoluminescence spectroscopy of the irradiated film indicated a decrease in the C 60 phase with a dose, and an increase in the intensity at the 590 nm wavelength, which is attributed to an increase in the oxygen content.

Study of the point defect creation and of the excitonic luminescence in alkali halides irradiated by swift heavy ions; Etude de la creation de defauts ponctuels et de la luminescence excitonique d`halogenures d`alcalins irradies par les ions lourds de grande vitesse

Energy Technology Data Exchange (ETDEWEB)

Protin, L

1994-10-05

The aim of this experimental thesis is to study the excitonic mechanisms and of the defect creation, in NaCl and KBr, under dense electronic excitations induced by swift heavy ion irradiations. In the first part, we present the main features of the interaction of swift heavy ions with solid targets, and after we review the well known radiolytic processes of the defect creation during X-ray irradiation. In the second chapter, we describe our experimental set-up. In the chapter III, we present our results of the in-situ optical absorption measurements. This results show that defect creation is less sensitive to the temperature than during a classical irradiation. Besides, we observe new mechanisms concerning the defect aggregation. In the chapter IV, we present the results of excitonic luminescence induced by swift by swift heavy ions. We observe that the luminescence yields only change with the highest electronic stopping power. In the chapter V, we perform thermal spike and luminescence yields calculations and we compare the numerical results to the experiments presented in the chapter IV. (author). 121 refs., 65 figs., 30 tabs.

Structural modification by swift heavy ion at metal/Si interface

Energy Technology Data Exchange (ETDEWEB)

Sisodia, Veenu; Jain, R.K.; Bhattacharaya, D.; Kabiraj, D.; Jain, I.P. E-mail: ipjain46@sify.com

2003-06-01

Transition metal silicides produced by swift heavy ion (SHI) irradiation have found applications in ultra-large-scale integrated circuits due to their small contact resistivities and higher thermal and chemical stabilities. In the present work, the mixing in Ni/Si and Ti/Si systems was studied under irradiation with Au ions. A layer of Ni (15 nm) and Ti (18 nm) was deposited by e-gun evaporation on Si (1 0 0) substrate at 10{sup -8} Torr vacuum. The samples were irradiated with 95 Mev Au ions at room temperature to a fluence of 10{sup 13} ions/cm{sup 2} and 1 pna beam current. Rutherford backscattering spectroscopy and X-Ray reflectivity have been employed to characterize the samples. The large electronic excitation due to SHI irradiation produces defects in the system. It is expected that SHI irradiation followed by thermal annealing in Ni/Si system will provide the required energy to the atoms to diffuse across the interface resulting in mixing.

Tailoring optical properties of TiO2-Cr co-sputtered films using swift heavy ions

Science.gov (United States)

Gupta, Ratnesh; Sen, Sagar; Phase, D. M.; Avasthi, D. K.; Gupta, Ajay

2018-05-01

Effect of 100 MeV Au7+ ion irradiation on structure and optical properties of Cr-doped TiO2 films has been studied using X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, UV-Visible spectroscopy, X-ray reflectivity, and atomic force microscopy. X-ray reflectivity measurement implied that film thickness reduces as a function of ion fluence while surface roughness increases. The variation in surface roughness is well correlated with AFM results. Ion irradiation decreases the band gap energy of the film. Swift heavy ion irradiation enhances the oxygen vacancies in the film, and the extra electrons in the vacancies act as donor-like states. In valence band spectrum, there is a shift in the Ti3d peak towards lower energies and the shift is equivalent to the band gap energy obtained from UV spectrum. Evidence for band bending is also provided by the corresponding Ti XPS peak which exhibits a shift towards lower energy due to the downward band bending. X-ray absorption studies on O Kand Cr L3,2 edges clearly indicate that swift heavy ion irradiation induces formation of Cr-clusters in TiO2 matrix.

Swift Heavy Ions in Matter

Science.gov (United States)

Rothard, Hermann; Severin, Daniel; Trautmann, Christina

2015-12-01

The present volume contains the proceedings of the Ninth International Symposium on Swift Heavy Ions in Matter (SHIM). This conference was held in Darmstadt, from 18 to 21 May 2015. SHIM is a triennial series, which started about 25 years ago by a joint initiative of CIRIL - Caen and GSI - Darmstadt, with the aim of promoting fundamental and applied interdisciplinary research in the field of high-energy, heavy-ion interaction processes with matter. SHIM was successively organized in Caen (1989), Bensheim (1992), Caen (1995), Berlin (1998), Catania (2002), Aschaffenburg (2005), Lyon (2008), and Kyoto (2012). The conference attracts scientists from many different fields using high-energy heavy ions delivered by large accelerator facilities and characterized by strong and short electronic excitations.

Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

International Nuclear Information System (INIS)

Paliwal, Ayushi; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

2016-01-01

Highlights: • Investigated the optical properties of BiFeO_3 (BFO) thin films after irradiation using SPR. • Otto configuration has been used to excite the surface plasmons using gold metal thin film. • BFO thin films were prepared by sol–gel spin coating technique. • Examined the refractive index dispersion of pristine and irradiated BFO thin film. - Abstract: Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO_3 (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol–gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au"9"+ ions at a fluence of 1 × 10"1"2 ions cm"−"2. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

Energy Technology Data Exchange (ETDEWEB)

Paliwal, Ayushi [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Sharma, Savita [Department of Applied Physics, Delhi Technological University, Delhi (India); Tomar, Monika [Physics Department, Miranda House, University of Delhi, Delhi 110007 (India); Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110075 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2016-07-15

Highlights: • Investigated the optical properties of BiFeO{sub 3} (BFO) thin films after irradiation using SPR. • Otto configuration has been used to excite the surface plasmons using gold metal thin film. • BFO thin films were prepared by sol–gel spin coating technique. • Examined the refractive index dispersion of pristine and irradiated BFO thin film. - Abstract: Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO{sub 3} (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol–gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au{sup 9+} ions at a fluence of 1 × 10{sup 12} ions cm{sup −2}. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

Swift heavy ion irradiation effects in {alpha} poly(vinylidene fluoride); Etude des effets induits par les ions lourds energetiques dans le poly(fluorure de vinylidene)

Energy Technology Data Exchange (ETDEWEB)

Le Bouedec, A

1999-11-29

The goal of this study is to characteristic and to localised defects created in {alpha} Poly (vinylidene fluoride) after swift heavy ion irradiations. PVDF films are irradiated with several Swift Heavy Ions (SHI), in the electronic stopping power (dE/dx){sub e}, in order to study the influence of irradiation parameters (absorbed dose, ion). These irradiated films are studied by different analysis techniques such as FTIR, ESR (X and Q band) spectroscopies and DSC. The crystalline level of PVDF is about 50% and we follow it destruction and amorphization as the absorbed dose increase by DSC and FTIR studies. The variation of the various FTIR bands allow us to observe the unsaturations induced by SHI radiations. Two sets of defects are observed: those which yield is sensitive to an increase of (dE/dx){sub e} and those that are not. A spatial distribution of the various defects within the talent track is provided and defects that are difficult to create are the closest of the ion path. The different kind of radicals created after irradiations are studied by ESR spectroscopy. Alkyl, peroxy and polyenyl radicals are detected after SHI radiations like after electron or {gamma} irradiations. Their yield of creation is independent of (dE/dx){sub e} and their localised in the crystalline zone or/and at the interfacial zone between crystalline and amorphous one. An other kind of radicals is created only after SHI radiations that are specific of the SHI-polymer interaction. We observe that these radicals are localised on a carbon cluster, in the core of the latent track for low doses and highly sensitive at the (dE/dx){sub e} of the ion. (author)

Role of the irradiation temperature on the modifications of swift-heavy-ion irradiated polyethylene

International Nuclear Information System (INIS)

Melot, M.; Ngono-Ravache, Y.; Balanzat, E.

2003-01-01

The damage processes triggered by swift heavy ions, SHI, can be very different to those induced by classical low ionising particles. This is due to the very high electronic stopping power, (dE/dx) e , of SHI. This paper concerns the effects of SHI on polyethylene, PE. In PE, low (dE/dx) e irradiations induce crosslinking and in-chain double bond formation. At high (dE/dx) e , the creation yield of vinyl groups becomes significant. Above a (dE/dx) e threshold, alkyne and allene groups appear. We present results on low temperature irradiations that bring new enlightenment on the damage process by preventing the migration of radiation-induced radicals and molecules. Two SHI specific modifications are studied: vinyl groups and alkyne end groups. We have irradiated PE films with oxygen and sulphur beams at 13.6 and 11.2 MeV/amu, respectively. The modifications were followed by in situ infrared spectroscopy (FTIR). We have performed irradiations at 8 and 290 K. The samples irradiated at 8 K have been annealed up to 290 K for investigating the effect of radical migration. Lowering the irradiation temperature to 8 K increases the creation yield of vinyl groups and alkyne end groups. The enhancement factor between 290 and 8 K is around three. Consequently the formation of defects specific to SHI irradiations is sensitive to radical migration and hence requires some time. During annealing, the alkyne concentration remains stable indicating that the creation of this group cannot be induced by radical recombination. The annealing spectra of vinyl groups are more complex

Phase transformation induced by swift heavy ion irradiation of pure metals

International Nuclear Information System (INIS)

Dammak, H.; Dunlop, A.; Lesueur, D.

1996-01-01

It is now unambiguously established that high electronic energy deposition (HEED), obtained by swift heavy ion irradiation, plays an important role in the damage processes of pure metallic targets: (i) annealing of the defects created by elastic collisions in Fe, Nb, Ni and Pt, and (ii) creation of additional defects in Co, Fe, Ti and Zr. For Ti, we have recently evidenced by transmission electron microscopy observations that the damage creation by HEED is very important and leads to a phase transformation. Titanium evolves from the equilibrium hcp alpha-phase to the high pressure omega-phase. We studied the influence of three parameters on this phase transformation: ion fluence, electronic stopping power and irradiation temperature. The study of Ti and the results concerning other metals (Fe, Zr, etc.) and the semi-metal Bi allow us to propose criteria to predict in which metals HEED could induce damage: those which undergo a phase transformation under high pressure. As a matter of fact, beryllium is strongly damaged when submitted to HEED and seems to behave very similarly to titanium. The fact that such phase changes from a crystalline form to another form were only observed in those metals in which high pressure phases exist in the pressure-temperature diagram, strongly supports the Coulomb explosion model in which the generation of (i) a shock wave and (ii) collective atomic movements are invoked to account for the observed damage creation. (orig.)

Science and technology on the nanoscale with swift heavy ions in matter

Energy Technology Data Exchange (ETDEWEB)

Neumann, Reinhard, E-mail: r.neumann@gsi.de

2013-11-01

Swift heavy ions have stimulated developments of science and technology on the nanoscale due to the specific manner of transferring their kinetic energy in a solid successively in small portions along their trajectories. They thus create absolutely straight, almost cylindrical, and very narrow damage trails of diameter 5–10 nm. In various materials, such as polymers, a suitable etchant can transform these tracks into narrow channels of cylindrical, conical, or other desired shapes. These channels represent a starting point particularly for two major fields: they can be chemically modified to control small species and act, e.g., as sensors and transmitters of specific biomolecules. Irradiation of a sample with only one heavy ion allows the fabrication of single-nanochannel devices enabling measurements of enormous sensitivity. Filling nanochannels with a material provides nanowires. These objects of restricted dimensions exhibit finite-size and quantum behavior and give rise to a broad range of fundamental and applied research. This contribution briefly recollects microtechnological achievements with swift heavy ions that began already in the 1970s, preparing the ground for gradual size decrease down to the nanoscopic objects now under study. Various examples of material modifications on the nanoscale are presented, including recent results obtained with nanochannels and nanowires. Emerging developments are addressed, encompassing in situ recording of processes in biological cells stimulated by well-aimed ion irradiation, the fabrication of three-dimensional nanowire architectures, and plasmonic effects in nanowires.

Swift heavy ion induced surface and microstructural evolution in metallic glass thin films

International Nuclear Information System (INIS)

Thomas, Hysen; Thomas, Senoy; Ramanujan, Raju V.; Avasthi, D.K.; Al- Omari, I.A.; Al-Harthi, Salim; Anantharaman, M.R.

2012-01-01

Swift heavy ion induced changes in microstructure and surface morphology of vapor deposited Fe–Ni based metallic glass thin films have been investigated by using atomic force microscopy, X-ray diffraction and transmission electron microscopy. Ion beam irradiation was carried out at room temperature with 103 MeV Au 9+ beam with fluences ranging from 3 × 10 11 to 3 × 10 13 ions/cm 2 . The atomic force microscopy images were subjected to power spectral density analysis and roughness analysis using an image analysis software. Clusters were found in the image of as-deposited samples, which indicates that the film growth is dominated by the island growth mode. As-deposited films were amorphous as evidenced from X-ray diffraction; however, high resolution transmission electron microscopy measurements revealed a short range atomic order in the samples with crystallites of size around 3 nm embedded in an amorphous matrix. X-ray diffraction pattern of the as-deposited films after irradiation does not show any appreciable changes, indicating that the passage of swift heavy ions stabilizes the short range atomic ordering, or even creates further amorphization. The crystallinity of the as-deposited Fe–Ni based films was improved by thermal annealing, and diffraction results indicated that ion beam irradiation on annealed samples results in grain fragmentation. On bombarding annealed films, the surface roughness of the films decreased initially, then, at higher fluences it increased. The observed change in surface morphology of the irradiated films is attributed to the interplay between ion induced sputtering, volume diffusion and surface diffusion.

Enhanced AC conductivity and dielectric relaxation properties of polypyrrole nanoparticles irradiated with Ni{sup 12+} swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

Hazarika, J.; Kumar, A., E-mail: ask@tezu.ernet.in

2014-08-15

In this paper, we report the 160 MeV Ni{sup 12+} swift heavy ions (SHIs) irradiation effects on AC conductivity and dielectric relaxation properties of polypyrrole (PPy) nanoparticles in the frequency range of 42 Hz–5 MHz. Four ion fluences of 5 × 10{sup 10}, 1 × 10{sup 11}, 5 × 10{sup 11} and 1 × 10{sup 12} ions/cm{sup 2} have been used for the irradiation purpose. Transport properties in the pristine and irradiated PPy nanoparticles have been investigated with permittivity and modulus formalisms to study the polarization effects and conductivity relaxation. With increasing ion fluence, the relaxation peak in imaginary modulus (M{sup ″}) plots shifts toward high frequency suggesting long range motion of the charge carriers. The AC conductivity studies suggest correlated barrier hopping as the dominant transport mechanism. The hopping distance (R{sub ω}) of the charge carriers decreases with increasing the ion fluence. Binding energy (W{sub m}) calculations depict that polarons are the dominant charge carriers.

Structural response of titanate pyrochlores to swift heavy ion irradiation

International Nuclear Information System (INIS)

Shamblin, Jacob; Tracy, Cameron L.; Ewing, Rodney C.; Zhang, Fuxiang; Li, Weixing; Trautmann, Christina; Lang, Maik

2016-01-01

The structure, size, and morphology of ion tracks resulting from irradiation of five different pyrochlore compositions (A 2 Ti 2 O 7 , A = Yb, Er, Y, Gd, Sm) with 2.2 GeV 197 Au ions were investigated by means of synchrotron X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Radiation-induced amorphization occurred in all five materials analyzed following an exponential rate as a function of ion fluence. XRD patterns showed a general trend of increasing susceptibility of amorphization with increasing ratio of A- to B-site cation ionic radii (r A /r B ) with the exception of Y 2 Ti 2 O 7 and Sm 2 Ti 2 O 7 . This indicates that the track size does not necessarily increase with r A /r B , in contrast with results from previous swift heavy ion studies on Gd 2 Zr 2-x Ti x O 7 pyrochlore materials. For Y 2 Ti 2 O 7 , this effect is attributed to the significantly lower electron density of this material relative to the lanthanide-bearing pyrochlores, thus lowering the electronic energy loss (dE/dx) of the high-energy ions in this composition. An energy loss normalization procedure was performed which reveals an initial increase of amorphous track size with r A /r B that saturates above a cation radius ratio larger than Gd 2 Ti 2 O 7 . This is in agreement with previous low-energy ion irradiation experiments and first principles calculations of the disordering energy of titanate pyrochlores indicating that the same trends in disordering energy apply to radiation damage induced in both the nuclear and electronic energy loss regimes. HRTEM images indicate that single ion tracks in Yb 2 Ti 2 O 7 and Er 2 Ti 2 O 7 , which have small A-site cations and low r A /r B , exhibit a core-shell structure with a small amorphous core surrounded by a larger disordered shell. In contrast, single tracks in Gd 2 Ti 2 O 7 and Sm 2 Ti 2 O 7 , have a larger amorphous core with minimal disordered shells.

Setup for in situ x-ray diffraction study of swift heavy ion irradiated materials

Science.gov (United States)

Kulriya, P. K.; Singh, F.; Tripathi, A.; Ahuja, R.; Kothari, A.; Dutt, R. N.; Mishra, Y. K.; Kumar, Amit; Avasthi, D. K.

2007-11-01

An in situ x-ray diffraction (XRD) setup is designed and installed in the materials science beam line of the Pelletron accelerator at the Inter-University Accelerator Centre for in situ studies of phase change in swift heavy ion irradiated materials. A high vacuum chamber with suitable windows for incident and diffracted X-rays is integrated with the goniometer and the beamline. Indigenously made liquid nitrogen (LN2) temperature sample cooling unit is installed. The snapshots of growth of particles with fluence of 90MeV Ni ions were recorded using in situ XRD experiment, illustrating the potential of this in situ facility. A thin film of C60 was used to test the sample cooling unit. It shows that the phase of the C60 film transforms from a cubic lattice (at room temperature) to a fcc lattice at around T =255K.

Setup for in situ x-ray diffraction study of swift heavy ion irradiated materials.

Science.gov (United States)

Kulriya, P K; Singh, F; Tripathi, A; Ahuja, R; Kothari, A; Dutt, R N; Mishra, Y K; Kumar, Amit; Avasthi, D K

2007-11-01

An in situ x-ray diffraction (XRD) setup is designed and installed in the materials science beam line of the Pelletron accelerator at the Inter-University Accelerator Centre for in situ studies of phase change in swift heavy ion irradiated materials. A high vacuum chamber with suitable windows for incident and diffracted X-rays is integrated with the goniometer and the beamline. Indigenously made liquid nitrogen (LN2) temperature sample cooling unit is installed. The snapshots of growth of particles with fluence of 90 MeV Ni ions were recorded using in situ XRD experiment, illustrating the potential of this in situ facility. A thin film of C60 was used to test the sample cooling unit. It shows that the phase of the C60 film transforms from a cubic lattice (at room temperature) to a fcc lattice at around T=255 K.

Effect of swift heavy ion irradiation on deep levels in Au /n-Si (100) Schottky diode studied by deep level transient spectroscopy

Science.gov (United States)

Kumar, Sandeep; Katharria, Y. S.; Kumar, Sugam; Kanjilal, D.

2007-12-01

In situ deep level transient spectroscopy has been applied to investigate the influence of 100MeV Si7+ ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5×109to1×1012ions cm-2. The swift heavy ion irradiation introduces a deep level at Ec-0.32eV. It is found that initially, trap level concentration of the energy level at Ec-0.40eV increases with irradiation up to a fluence value of 1×1010cm-2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5×1010cm-2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

Effect of swift heavy ion-irradiation on Cr/Fe/Ni multilayers

International Nuclear Information System (INIS)

Gupta, Ratnesh; Gupta, Ajay; Avasthi, D.K.; Principi, G.; Tosello, C.

1999-01-01

A multilayer film having overall composition Fe 50 Cr 25 Ni 25 , was irradiated successively by 80 MeV Si ions and Ag ions of 150 and 200 MeV energy. The energy deposited in the multilayer in the form of electronic excitations results in significant modification at the interfaces. The interfacial roughness increases in the system after the irradiations as revealed by X-ray reflectivity measurement. Moessbauer measurements provide evidence of intermixing after the irradiation by 200 MeV Ag ions. Comparison of heavy ion irradiated multilayer has been done with annealed and low energy ion irradiated samples. Results suggest that the phases formed at the interfaces of iron as a result of electronic energy loss are similar to those in the cases of thermal diffusion and keV energy ion beam irradiation

Effects of swift heavy ion irradiation on La0.5Pr0.2Sr0.3MnO3 epitaxial thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Markna, J.H.; Parmar, R.N.; Rana, D.S.; Ravi Kumar; Misra, P.; Kukreja, L.M.; Kuberkar, D.G.; Malik, S.K.

2007-01-01

We report the observation of room temperature insulator to metal transition and magnetoresistance characteristics of Swift Heavy Ions (SHIs) irradiated La 0.5 Pr 0.2 Sr 0.3 MnO 3 (LPSMO) epitaxial thin films grown on single crystal (1 0 0) SrTiO 3 substrates using Pulsed Laser Deposition. The epitaxial nature and crystallanity of the films was confirmed from the structural and magnetoresistance characteristics. Irradiation with the 200 MeV Ag 15+ ions at a fluence of about 5 x 10 11 ions/cm 2 showed suppression in the resistivity by ∼68% and 31% for the films with 50 nm and 100 nm thickness respectively. The possible reasons for this suppression could be either release of strain in the films in the dead layer at the interface of film-substrate or Swift Heavy Ions induced annealing which in turn affects the Mn-O-Mn bond angle thereby favoring the Zener double exchange. Field Coefficient of Resistance (FCR) values for both films, determined from R-H data and magnetoresistance data, showed a marginal enhancement after irradiation

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

Science.gov (United States)

Jadhav, Vidya

2015-09-01

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0> orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 1017 cm-3 were irradiated at 100 MeV Fe7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 1010-1 × 1014 ions cm-2. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet-visible-NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 1013, 5 × 1013 and 1 × 1014 ions cm-2, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 1013 ion cm-2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E1, E1 + Δ and E2 band gaps in all irradiated samples.

Etching kinetics of swift heavy ion irradiated silicone rubber with insoluble additives or reaction products

International Nuclear Information System (INIS)

Fink, D.; Mueller, M.; Petrov, A.; Farenzena, L.; Behar, M.; Papaleo, R.P.

2003-01-01

It is normally understood as a basic precondition of the etching of swift heavy ion tracks in polymers that both the additives and etching products are soluble in the etchant. If this is not given, the polymer surface may be gradually blocked by the deposition of the insoluble material that acts as a diffusion barrier for the penetration of fresh etchant into the tracks, and therefore the effective track etching speed will gradually be reduced. The etching kinetics is developed for that case, and the theory is compared with first experimental findings. For that purpose we have taken commercial silicone rubber foils as test materials, that were irradiated with GeV heavy ions through a mask at a fluence that corresponds to the onset of track overlapping. After etching with NaOH, the corresponding etching speed was recorded via the reduction of the foil thickness. The etching speed is seen to decrease with exposure time, in parallel to the development of an insoluble surface layer. It is discussed how to prevent that surface blocking, to maintain a high etching speed

Swift heavy ion irradiation effects in SiC measured by positrons

Energy Technology Data Exchange (ETDEWEB)

Liszkay, L.; Kajcsos, Zs.; Szilagyi, E. [KFKI Research Inst. for Nuclear and Particle Physics, Budapest (Hungary); Havancsak, K. [Dept. for Solid State Physics, Eoetvoes Univ., Budapest (Hungary); Barthe, M.F.; Desgardin, P.; Henry, L. [CNRS Centre d' Etudes et de Recherches par Irradiation, Orleans (France); Battistig, G. [Research Inst. for Technical Physics and Materials Science, Budapest (Hungary); Skuratov, V.A. [Joint Inst. of Nuclear Research, Moscow (Russian Federation). Bogoliubov Lab. of Theoretical Physics

2001-07-01

N-type 6H SiC single crystals irradiated with swift (246 MeV) Kr ions at room temperature (the implantation depth being 21 {mu}m) were investigated by conventional positron lifetime and Doppler-broadening measurements as well as with the application of a slow positron beam. The fluence dependence of the irradiation-induced defects was studied in the 1 x 10{sup 10} - 1 x 10{sup 14} ion cm{sup -2} range. In the fluence and depth range studied, no sign of amorphization (or creation of large voids) was seen in the Kr irradiated crystals. The positron annihilation results were compared with atomic displacement calculations by TRIM. A simple model was used to describe the trapping effect and determine the relationship between the atomic displacement densities and the positron trapping. The 225 ps lifetime of the open-volume defects created suggests that the V{sub Si}-V{sub C} divacancy is the dominant trapping site in the implanted zone. (orig.)

Photorefractive response and optical damage of LiNbO3 optical waveguides produced by swift heavy ion irradiation

Science.gov (United States)

Villarroel, J.; Carrascosa, M.; García-Cabañes, A.; Caballero-Calero, O.; Crespillo, M.; Olivares, J.

2009-06-01

The photorefractive behaviour of a novel type of optical waveguides fabricated in LiNbO3 by swift heavy ion irradiation is investigated. First, the electro-optic coefficient r 33 of these guides that is crucial in the photorefractive effect is measured. Second, two complementary aspects of the photorefractive response are studied: (i) recording and light-induced and dark erasure of holographic gratings; (ii) optical beam degradation in single-beam configuration. The main photorefractive parameters, recording and erasing time constants, maximum refractive-index change and optical damage thresholds are determined.

Modifications of gallium phosphide single crystals using slow highly charged ions and swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

El-Said, A.S., E-mail: elsaid@kfupm.edu.sa [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Wilhelm, R.A.; Heller, R.; Akhmadaliev, Sh.; Schumann, E. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Sorokin, M. [National Research Centre ’Kurchatov Institute’, Kurchatov Square 1, 123182 Moscow (Russian Federation); Facsko, S. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Trautmann, C. [GSI Helmholtz Centre for Heavy Ion Research, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64289 Darmstadt (Germany)

2016-09-01

GaP single crystals were irradiated with slow highly charged ions (HCI) using 114 keV {sup 129}Xe{sup (33–40)+} and with various swift heavy ions (SHI) of 30 MeV I{sup 9+} and 374 MeV–2.2 GeV {sup 197}Au{sup 25+}. The irradiated surfaces were investigated by scanning force microscopy (SFM). The irradiations with SHI lead to nanohillocks protruding from the GaP surfaces, whereas no changes of the surface topography were observed after the irradiation with HCI. This result indicates that a potential energy above 38.5 keV is required for surface nanostructuring of GaP. In addition, strong coloration of the GaP crystals was observed after irradiation with SHI. The effect was stronger for higher energies. This was confirmed by measuring an increased extinction coefficient in the visible light region.

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

Energy Technology Data Exchange (ETDEWEB)

Jadhav, Vidya, E-mail: vj1510@yahoo.com

2015-09-01

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10{sup 17} cm{sup −3} were irradiated at 100 MeV Fe{sup 7+} ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10{sup 10}–1 × 10{sup 14} ions cm{sup −2}. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10{sup 13}, 5 × 10{sup 13} and 1 × 10{sup 14} ions cm{sup −2}, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10{sup 13} ion cm{sup −2} was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E{sub 1}, E{sub 1} + Δ and E{sub 2} band gaps in all irradiated samples.

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

International Nuclear Information System (INIS)

Jadhav, Vidya

2015-01-01

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10 17 cm −3 were irradiated at 100 MeV Fe 7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10 10 –1 × 10 14 ions cm −2 . The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10 13 , 5 × 10 13 and 1 × 10 14 ions cm −2 , we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10 13 ion cm −2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E 1 , E 1 + Δ and E 2 band gaps in all irradiated samples

Dewetting of nickel oxide-films on silicon under swift heavy ion irradiation

International Nuclear Information System (INIS)

Bolse, Thunu; Elsanousi, Ammar; Paulus, Hartmut; Bolse, Wolfgang

2006-01-01

Dewetting, occurring when a thin film on a non-wettable substrate turns into its liquid state, has gained strong interest during the last decade, since it results in nano-scale, large-area covering pattern formation. Recently we found that swift heavy ion (SHI) irradiation of thin NiO films on Si substrates at 80 K results in similar dewetting pattern, although in this case the coating has never reached its melting point. Careful inspection of the SEM images clearly revealed that the same nucleation mechanisms as observed for molten polymer films on Si (heterogeneous and homogeneous nucleation) were active. AFM shows that the circular holes formed in the early stages of the dewetting process exhibit a high and asymmetric rim-structure. RBS analysis was used to measure the coverage of the surface by the oxide films and revealed that the holes grow at constant velocity. This, and the shape of the rims, indicate that the material removed from the substrate surface piles up by plastic deformation, which points at a balance of the capillary driving forces and the hindered material dissipation

Swift heavy ion induced modifications in optical and electrical properties of cadmium selenide thin films

Science.gov (United States)

Choudhary, Ritika; Chauhan, Rishi Pal

2017-07-01

The modification in various properties of thin films using high energetic ion beam is an exciting area of basic and applied research in semiconductors. In the present investigations, cadmium selenide (CdSe) thin films were deposited on ITO substrate using electrodeposition technique. To study the swift heavy ion (SHI) induced effects, the deposited thin films were irradiated with 120 MeV heavy Ag9+ ions using pelletron accelerator facility at IUAC, New Delhi, India. Structural phase transformation in CdSe thin film from metastable cubic phase to stable hexagonal phase was observed after irradiation leading to decrease in the band gap from 2.47 eV to 2.12 eV. The phase transformation was analyzed through X-ray diffraction patterns. During SHI irradiation, Generation of high temperature and pressure by thermal spike along the trajectory of incident ions in the thin films might be responsible for modification in the properties of thin films.[Figure not available: see fulltext.

Effect of swift heavy ion irradiation on surface resistance of DyBa 2

Indian Academy of Sciences (India)

We report the observation of a pronounced peak in surface resistance at microwave frequencies of 4.88 GHz and 9.55 GHz and its disappearance after irradiation with swift ions in laser ablated DyBa2Cu3O7- (DBCO) thin films. The measurements were carried out in zero field as well as in the presence of magnetic fields ...

Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

Science.gov (United States)

Singh, Hemant Kr.; Avasthi, D. K.; Aggarwal, Shruti

2015-06-01

Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO2:F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In2O3:Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag+9 ions at fluences ranging from 3.0 × 1011 ions/cm2 to 3.0 × 1013 ions/cm2. The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications.

Dewetting at the edge of a thin NiO-film on Si by swift heavy ion irradiation

International Nuclear Information System (INIS)

Dautel, Knut; Ferhati, Redi; Bolse, Wolfgang

2014-01-01

We have investigated dewetting along a straight edge of a thin NiO-film on a Si-wafer induced by irradiation with 4.8 MeV/u Au-ions at room temperature. Both, the retreat of the edge as well as the opening and growth of circular holes in the film were monitored using our in-situ high resolution scanning electron microscope at the UNILAC accelerator at the Helmholtz Centre for Heavy Ion Research in Darmstadt. The “dewetting kinetics” (dependence of the retreated length and the hole radius on the ion fluence) are compared to previously published results on dewetting of poly-crystalline (Au) and glassy (polymer) films. In the present case the dewetting kinetics compare well with those observed for isothermal dewetting of the highly viscous polymer films, presumed that the role of time in thermally induced dewetting is taken over by the ion fluence in ion induced dewetting. Both, from the dewetting kinetics and the shape of the remaining NiO-traces in the dewetted area in front of the retreating edge, we conclude that the presently observed swift heavy ion induced dewetting occurs by interfacial slipping. It occurs in spatially and timely separated steps in the transiently molten single ion tracks, where the required reduction of the viscosity of NiO is achieved

Dewetting at the edge of a thin NiO-film on Si by swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Dautel, Knut; Ferhati, Redi; Bolse, Wolfgang, E-mail: w.bolse@ihfg.uni-stuttgart.de

2014-01-01

We have investigated dewetting along a straight edge of a thin NiO-film on a Si-wafer induced by irradiation with 4.8 MeV/u Au-ions at room temperature. Both, the retreat of the edge as well as the opening and growth of circular holes in the film were monitored using our in-situ high resolution scanning electron microscope at the UNILAC accelerator at the Helmholtz Centre for Heavy Ion Research in Darmstadt. The “dewetting kinetics” (dependence of the retreated length and the hole radius on the ion fluence) are compared to previously published results on dewetting of poly-crystalline (Au) and glassy (polymer) films. In the present case the dewetting kinetics compare well with those observed for isothermal dewetting of the highly viscous polymer films, presumed that the role of time in thermally induced dewetting is taken over by the ion fluence in ion induced dewetting. Both, from the dewetting kinetics and the shape of the remaining NiO-traces in the dewetted area in front of the retreating edge, we conclude that the presently observed swift heavy ion induced dewetting occurs by interfacial slipping. It occurs in spatially and timely separated steps in the transiently molten single ion tracks, where the required reduction of the viscosity of NiO is achieved.

Single ion induced surface nanostructures: a comparison between slow highly charged and swift heavy ions.

Science.gov (United States)

Aumayr, Friedrich; Facsko, Stefan; El-Said, Ayman S; Trautmann, Christina; Schleberger, Marika

2011-10-05

This topical review focuses on recent advances in the understanding of the formation of surface nanostructures, an intriguing phenomenon in ion-surface interaction due to the impact of individual ions. In many solid targets, swift heavy ions produce narrow cylindrical tracks accompanied by the formation of a surface nanostructure. More recently, a similar nanometric surface effect has been revealed for the impact of individual, very slow but highly charged ions. While swift ions transfer their large kinetic energy to the target via ionization and electronic excitation processes (electronic stopping), slow highly charged ions produce surface structures due to potential energy deposited at the top surface layers. Despite the differences in primary excitation, the similarity between the nanostructures is striking and strongly points to a common mechanism related to the energy transfer from the electronic to the lattice system of the target. A comparison of surface structures induced by swift heavy ions and slow highly charged ions provides a valuable insight to better understand the formation mechanisms. © 2011 IOP Publishing Ltd

Swift heavy ion irradiation induced phase transformation in undoped and niobium doped titanium dioxide composite thin films

Energy Technology Data Exchange (ETDEWEB)

Gautam, Subodh K., E-mail: subodhkgtm@gmail.com [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Chettah, Abdelhak [LGMM Laboratory, Université 20 Août 1955-Skikda, BP 26, 21000 Skikda (Algeria); Singh, R.G. [Department of Physics, Bhagini Nivedita College, Delhi University, Delhi 110043 (India); Ojha, Sunil; Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

2016-07-15

Study reports the effect of swift heavy ion (SHI) irradiation induced phase transformation in undoped and Niobium doped anatase TiO{sub 2} composite thin films. Investigations were carried out at different densities of electronic excitations (EEs) using 120 MeV Ag and 130 MeV Ni ions irradiations. Films were initially annealed at 900 °C and results revealed that undoped films were highly stable in anatase phase, while the Nb doped films showed the composite nature with the weak presence of Niobium penta-oxide (Nb{sub 2}O{sub 5}) phase. The effect at low density of EEs in undoped film show partial anatase to rutile phase transformation; however doped film shows only further growth of Nb{sub 2}O{sub 5} phase beside the anatase to rutile phase transformation. At higher density of EEs induced by Ag ions, registered continuous ion track of ∼3 nm in lattice which leads to nano-crystallization followed by decomposition/amorphization of rutile TiO{sub 2} and Nb{sub 2}O{sub 5} phases in undoped and doped films, respectively. However, Ni ions are only induced discontinuous sequence of ion tracks with creation of damage and disorder and do not show amorphization in the lattice. The in-elastic thermal spike calculations were carried out for anatase TiO{sub 2} phase to understand the effect of EEs on anatase to rutile phase transformation followed by amorphization in NTO films in terms of continuous and discontinuous track formation by SHI irradiation.

Low energy ion implantation and high energy heavy ion irradiation in C60 films

International Nuclear Information System (INIS)

Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

2001-01-01

C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

Investigation of Au9+ swift heavy ion irradiation on CdS/CuInSe2 thin films

International Nuclear Information System (INIS)

Joshi, Rajesh A.; Taur, Vidya S.; Singh, Fouran; Sharma, Ramphal

2013-01-01

In the present manuscript we report about the preparation of CdS/CuInSe 2 heterojunction thin films by chemical ion exchange method and investigation of 120 MeV Au 9+ swift heavy ions (SHI) irradiation effect on its physicochemical as well as optoelectronic properties. These pristine (as grown) samples are irradiated with 120 MeV Au 9+ SHI of 5×10 11 and 5×10 12 ions/cm 2 fluencies and later on characterized for structural, compositional, morphological, optical and I–V characteristics. X-ray diffraction (XRD) pattern obtained from pristine and irradiated films shows considerable modifications in peak intensity as well as rising of some new peaks, corresponding to In 2 Se 3 , Cu 3 Se 2 and CuIn 2 Se 3 materials. Transmission electron microscope (TEM) images show decrease in grain size upon increase in irradiation ion fluencies, which is also supported from the observation of random and uneven distribution of nano-grains as confirmed through scanning electron microscope (SEM) images. Presence of Cd, Cu, In, S and Se in energy dispersive X-ray spectrum analysis (EDAX) confirms the expected and observed elemental composition in thin films, the absorbance peaks are related to band to band transitions and spin orbit splitting while energy band gap is observed to increase from 1.36 for pristine to 1.53 eV for SHI irradiated thin films and I–V characteristics under illumination to 100 mW/cm 2 light source shows enhancement in conversion efficiency from 0.26 to 1.59% upon irradiation. - Highlights: • Nanostructured CdS/CuInSe 2 can be grown by chemical ion exchange method. • Physicochemical and optoelectronic properties can be modified by 120 MeV Au 9+ SHI Irradiation. • Solar energy conversion efficiency improved from 0.26 to 1.59% in CdS/CuInSe 2 upon irradiation

ion irradiation

Indian Academy of Sciences (India)

Swift heavy ions interact predominantly through inelastic scattering while traversing any polymer medium and produce excited/ionized atoms. Here samples of the polycarbonate Makrofol of approximate thickness 20 m, spin coated on GaAs substrate were irradiated with 50 MeV Li ion (+3 charge state). Build-in ...

Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations

International Nuclear Information System (INIS)

D'Orleans, C.

2003-07-01

This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co + ions have been implanted at 160 keV at fluences of 2.10 16 , 5.10 16 and 10 17 at/cm 2 , and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10 16 Co + /cm 2 at 77 K, to 9.7 nm at 10 17 Co + /cm 2 at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

Characterization of radiation damage induced by swift heavy ions in graphite

Energy Technology Data Exchange (ETDEWEB)

Hubert, Christian

2016-05-15

Graphite is a classical material in neutron radiation environments, being widely used in nuclear reactors and power plants as a moderator. For high energy particle accelerators, graphite provides ideal material properties because of the low Z of carbon and its corresponding low stopping power, thus when ion projectiles interact with graphite is the energy deposition rather low. This work aims to improve the understanding of how the irradiation with swift heavy ions (SHI) of kinetic energies in the range of MeV to GeV affects the structure of graphite and other carbon-based materials. Special focus of this project is given to beam induced changes of thermo-mechanical properties. For this purpose the Highly oriented pyrolytic graphite (HOPG) and glassy carbon (GC) (both serving as model materials), isotropic high density polycrystalline graphite (PG) and other carbon based materials like carbon fiber carbon composites (CFC), chemically expanded graphite (FG) and molybdenum carbide enhanced graphite composites (MoC) were exposed to different ions ranging from {sup 131}Xe to {sup 238}U provided by the UNILAC accelerator at GSI in Darmstadt, Germany. To investigate structural changes, various in-situ and off-line measurements were performed including Raman spectroscopy, x-ray diffraction and x-ray photo-electron spectroscopy. Thermo-mechanical properties were investigated using the laser-flash-analysis method, differential scanning calorimetry, micro/nano-indentation and 4-point electrical resistivity measurements. Beam induced stresses were investigated using profilometry. Obtained results provided clear evidence that ion beam-induced radiation damage leads to structural changes and degradation of thermal, mechanical and electrical properties of graphite. PG transforms towards a disordered sp2 structure, comparable to GC at high fluences. Irradiation-induced embrittlement is strongly reducing the lifetime of most high-dose exposed accelerator components. For

Damage formation and annealing in InP due to swift heavy ions

International Nuclear Information System (INIS)

Kamarou, A.; Wesch, W.; Wendler, E.; Klaumuenzer, S.

2004-01-01

Virgin and pre-damaged InP samples were irradiated at room temperature (RT) and at liquid nitrogen temperature (LNT) with different fluences of 140 MeV Kr, 390 MeV Xe and 600 MeV Au ions. The pre-damaging was performed with 600 keV Ge ions at LNT to obtain different damage levels. The samples were analysed by means of Rutherford backscattering spectrometry (RBS) in random and channelling geometry. A relatively weak damage accumulation in virgin InP and a very significant defect annealing in pre-damaged InP occurs due to 140 MeV Kr irradiation. The damaging of virgin InP with 390 MeV Xe and 600 MeV Au is much more efficient in comparison with that of 140 MeV Kr. Further, annealing of the pre-damaged InP due to 390 MeV Xe irradiation is hardly visible. At LNT InP appears to be much more radiation-resistant to swift heavy ion (SHI) irradiation than at RT. Our results show that during SHI irradiation of InP both damage formation and damage annealing occur simultaneously. Whether the first or the second one plays a more important role depends on the SHI mass and energy

Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Moisy, F., E-mail: moisy@ganil.fr [CIMAP, Normandie Universite ENSICAEN/CEA/CNRS, 6 Bd Maréchal Juin, 14050 Caen (France); Sall, M.; Grygiel, C.; Balanzat, E.; Boisserie, M.; Lacroix, B. [CIMAP, Normandie Universite ENSICAEN/CEA/CNRS, 6 Bd Maréchal Juin, 14050 Caen (France); Simon, P. [CNRS, UPR 3079 CEMHTI, CS 90055, 45071 Orléans Cedex 2 (France); Monnet, I. [CIMAP, Normandie Universite ENSICAEN/CEA/CNRS, 6 Bd Maréchal Juin, 14050 Caen (France)

2016-08-15

Wurtzite GaN epilayers, grown on the c-plane of sapphire substrate, have been irradiated with swift heavy ions at different energies and fluences, and thereafter studied by Raman scattering spectroscopy, UV–visible spectroscopy and transmission electron microscopy. Raman spectra show strong structural modifications in the GaN layer. Indeed, in addition to the broadening of the allowed modes, a large continuum and three new modes at approximately 200 cm{sup −1}, 300 cm{sup −1} and 670 cm{sup −1} appear after irradiation attributed to disorder-activated Raman scattering. In this case, spectra are driven by the phonon density of states of the material due to the loss of translation symmetry of the lattice induced by defects. It was shown qualitatively that both electronic excitations and elastic collisions play an important role in the disorder induced by irradiation. UV–visible spectra reveal an absorption band at 2.8 eV which is linked to the new mode at 300 cm{sup −1} observed in irradiated Raman spectra and comes from Ga-vacancies. These color centers are produced by elastic collisions (without any visible effect of electronic excitations).

The gaseous emission of polymers under swift heavy ion irradiation: effect of the electronic stopping power

International Nuclear Information System (INIS)

Picq, V.

2000-07-01

This thesis contributes to a better understanding of the damaging processes, which occur in polymers under swift heavy ion irradiation. The present study is exclusively devoted to the influence of the electronic stopping power, (dE/dx)e, on the molecular emission under irradiation. The irradiated polymers are polyethylene, polypropylene and poly-butene. The (dE/dx)e of the projectiles used varies from 3.5*10 -3 MeV.mg -1 .cm 2 (electron) to 39 MeV.mg -1 .cm 2 ( 58 Ni). We used two different experimental approaches in order to identify the nature of the emitted gases: mass spectrometry and infrared spectroscopy. The first technique is non selective, therefore, we could detect the emission of H 2 and heavy molecules; it also gives information on the diffusion kinetics of the molecules formed. The use of infrared spectroscopy for this kind of analysis is new and the technique was developed at the laboratory. It enables us to identify, without any ambiguity, molecules with up to three carbon atoms. The experimental spectra are analysed by using reference spectra of pure gases, measured in our laboratory. We have quantified precisely each identified gas, and we have followed the evolution of the radiochemical yields with increasing (dE/dx)e. The results, obtained at different (dE/dx)e, inform us on the different mechanisms of gas molecules formation, for example the side group departure and, at high (dE/dx)e, the fragmentation of the main chain which is due to multiple ionisation of the macromolecule. (author)

Graphite irradiated by swift heavy ions under grazing incidence

CERN Document Server

Liu, J; Müller, C; Neumann, R

2002-01-01

Highly oriented pyrolytic graphite is irradiated with various heavy projectiles (Ne, Ni, Zn, Xe and U) in the MeV to GeV energy range under different oblique angles of incidence. Using scanning tunneling microscopy, the impact zones are imaged as hillocks protruding from the surface. The diameter of surface-grazing tracks varies between 3 nm (Ne) and 6 nm (U), which is about twice as large as under normal beam incidence. Exclusively for U and Xe projectiles, grazing tracks exhibit long comet-like tails consisting of successive little bumps indicating that the damage along the ion path is discontinuous even for highest electronic stopping powers.

Creation of nanoscale objects by swift heavy ion track manipulations

International Nuclear Information System (INIS)

Fink, D.; Petrov, A.; Stolterfoht, N.

2003-01-01

In this work we give an overview of the possibilities to create new objects with nanoscale dimensions with ion tracks, for future applications. This can be realized in two ways: by manipulation of latent swift heavy ion (SHI) tracks, or by embedding specific structures within etched SHI tracks. In the first case one can make use of irradiation effects such as phase transitions and chemical or structural changes along the tracks. In the latter case, one can fill etched SHI tracks with metals, semiconductors, insulating and conducting polymers, fullerite, or colloides. Wires and tubules with outer diameters, between about 50 nm and 5 μm and lengths of up to about 100 μm can be obtained. The most important production techniques are galvanic and chemical depositions. Ion Transmission Spectrometry has turned out to be an especially useful tool for the characterisation of the produced objects. Present studies aim at the construction of condensers, magnets, diodes, and sensors in etched tracks. An obstacle for the practical realization of smallest-size polymeric ion track devices is the statistical distribution of the ion tracks on the target areas, which yields some pixels without any track, and other pixels even with overlapping tracks on a given sample. In a first test experiment we demonstrate that one can, in principle, overcome that problem by taking self-ordered porous foils as masks for subsequent high-fluence SHI irradiation. (author)

Swift heavy ion induced modification of aliphatic polymers

International Nuclear Information System (INIS)

Hossain, Umme Habiba

2015-01-01

In this thesis, the high energy heavy ion induced modification of aliphatic polymers is studied. Two polymer groups, namely polyvinyl polymers (PVF, PVAc, PVA and PMMA) and fluoropolymers (PVDF, ETFE, PFA and FEP) were used in this work. Polyvinyl polymers were investigated since they will be used as insulating materials in the superconducting magnets of the new ion accelerators of the planned International Facility for Antiproton and Ion Research (FAIR) at the GSI Helmholtz-Centre of Heavy Ion Research (GSI) in Darmstadt. In order to study ion-beam induced degradation, all polymer foils were irradiated at the GSI linear accelerator UNILAC using several projectiles (U, Au, Sm, Xe) and experimentation sites (beam lines X0 and M3) over a large fluence regime (1 x 10 10 - 5 x 10 12 ions/cm 2 ). Five independent techniques, namely infrared (FT-IR) and ultraviolet-visible (UV-Vis) spectroscopy, residual gas analysis (RGA), thermal gravimetric analysis (TGA), and mass loss analysis (ML), were used to analyze the irradiated samples. FT-IR spectroscopy revealed that ion irradiation led to the decrease of characteristic band intensities showing the general degradation of the polymers, with scission of side groups and the main backbone. As a consequence of the structural modification, new bands appeared. UV-Vis transmission analysis showed an absorption edge shift from the ultraviolet region towards the visible region indicating double bond and conjugated double bond formation. On-line massspectrometric residual gas analysis showed the release of small gaseous fragment molecules. TGA analysis gave evidence of a changed thermal stability. With ML analysis, the considerable mass loss was quantified. The results of the five complementary analytical methods show how heavy ion irradiation changes the molecular structure of the polymers. Molecular degradation mechanisms are postulated. The amount of radiation damage is found to be sensitive to the used type of ionic species. While

Swift-heavy ion track electronics (SITE)

International Nuclear Information System (INIS)

Fink, D.; Chadderton, L.T.; Hoppe, K.; Fahrner, W.R.; Chandra, A.; Kiv, A.

2007-01-01

An overview about the state-of-art of the development of a new type of nanoelectronics based on swift-heavy ions is given. Polymeric as well as silicon-based substrates have been used, and both latent and etched ion tracks play a role. Nowadays the interest has shifted from simple scaling-down of capacitors, magnets, transformers, diodes, transistors, etc. towards new types of ion track-based structures hitherto unknown in electronics. These novel structures, denoted by the acronyms 'TEAMS' (tunable electrically anisotropic material on semiconductor) and 'TEMPOS' (tunable electronic material with pores in oxide on semiconductor), may exhibit properties of tunable resistors, capacitors, diodes, sensors and transistors. Their general current/voltage characteristics are outlined. As these structures are often influenced by ambient physical or chemical parameters they also act as sensors. A peculiarity of these structures is the occurrence of negative differential resistances (NDRs) which makes them feasible for applications in tunable flip-flops, amplifiers and oscillators

Swift-heavy ion track electronics (SITE)

Energy Technology Data Exchange (ETDEWEB)

Fink, D. [Hahn-Meitner-Institute Berlin, Glienicker Str. 100, D-14109 Berlin (Germany)]. E-mail: fink@hmi.de; Chadderton, L.T. [Institute of Advanced Studies, ANU Canberra, G.P.O. Box 4, ACT (Australia); Hoppe, K. [South Westfalia University of Applied Sciences, Hagen (Germany); Fahrner, W.R. [Chair of Electronic Devices, Inst. of Electrotechnique, Fernuniversitaet, Hagen (Germany); Chandra, A. [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India); Kiv, A. [Ben Gurion University of the Negev, Israel, P.O. Box 653, Beer-Sheva, 84105 (Israel)

2007-08-15

An overview about the state-of-art of the development of a new type of nanoelectronics based on swift-heavy ions is given. Polymeric as well as silicon-based substrates have been used, and both latent and etched ion tracks play a role. Nowadays the interest has shifted from simple scaling-down of capacitors, magnets, transformers, diodes, transistors, etc. towards new types of ion track-based structures hitherto unknown in electronics. These novel structures, denoted by the acronyms 'TEAMS' (tunable electrically anisotropic material on semiconductor) and 'TEMPOS' (tunable electronic material with pores in oxide on semiconductor), may exhibit properties of tunable resistors, capacitors, diodes, sensors and transistors. Their general current/voltage characteristics are outlined. As these structures are often influenced by ambient physical or chemical parameters they also act as sensors. A peculiarity of these structures is the occurrence of negative differential resistances (NDRs) which makes them feasible for applications in tunable flip-flops, amplifiers and oscillators.

Positron lifetime and Doppler broadening study of defects created by swift ion irradiation in sapphire

International Nuclear Information System (INIS)

Liszkay, L.; Gordo, P.M.; Lima, A. de; Havancsak, K.; Skuratov, V.A.; Kajcsos, Z.

2004-01-01

Swift ions create a defect profile penetrating deep into a solid compared to the sampling range of typical slow positron beams, which may consequently study a homogeneous zone of defected materials. To investigate the defect population created by energetic ions, we studied α-Al 2 O 3 single crystals irradiated with swift Kr ions by using conventional and pulsed positron beams. Samples irradiated with krypton at 245 MeV energy in a wide fluence range show nearly saturated positron trapping above 5 x 10 10 ions cm -2 fluence, indicating the creation of monovacancies in high concentration. At 1 x 10 14 ions cm -2 irradiation a 500 ps long lifetime component appears, showing the creation of larger voids. This threshold corresponds well to the onset of the overlap of the damage zones after Bi ion irradiation along the ion trajectories observed with microscopic methods. (orig.)

Swift heavy ion induced phase transformation and thermoluminescence properties of zirconium oxide

Energy Technology Data Exchange (ETDEWEB)

Lokesha, H.S. [Physics R & D Centre, PES Institute of Technology, BSK 3rd Stage, Bangalore 560085 (India); Nagabhushana, K.R., E-mail: bhushankr@gmail.com [Physics R & D Centre, PES Institute of Technology, BSK 3rd Stage, Bangalore 560085 (India); Department of Physics, PES University, BSK 3rd Stage, Bangalore 560085 (India); Singh, Fouran [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

2016-07-15

Zirconium oxide (ZrO{sub 2}) powder is synthesized by combustion technique. XRD pattern of ZrO{sub 2} shows monoclinic phase with average crystallite size 35 nm. Pellets of ZrO{sub 2} are irradiated with 100 MeV swift Si{sup 7+}, Ni{sup 7+} and 120 MeV swift Ag{sup 9+} ions in the fluence range 3 × 10{sup 10}–3 × 10{sup 13} ions cm{sup −2}. XRD pattern show the main diffraction peak correspond to monoclinic and tetragonal phase of ZrO{sub 2} in 2θ range 27–33°. Structural phase transformation is observed for Ni{sup 7+} and Ag{sup 9+} ion irradiated samples at a fluence 1 × 10{sup 13} ions cm{sup −2} and 3 × 10{sup 12} ions cm{sup −2} respectively, since the deposited electronic energy loss exceeds an effective threshold (>12 keV nm{sup −1}). Phase transition induced by Ag{sup 9+} ion is nearly 2.9 times faster than Ni{sup 7+} ion at 1 × 10{sup 13} ions cm{sup −2}. Ag{sup 9+} ion irradiation leads two ion impact processes. Thermoluminescence (TL) glow curves exhibit two glows, a well resolved peak at ∼424 K and unresolved peak at 550 K for all SHI irradiated samples. TL response is decreased with increase of ion fluence. Beyond 3 × 10{sup 12} ions cm{sup −2}, samples don’t exhibit TL due to annihilation of defects.

In situ defect annealing of swift heavy ion irradiated CeO₂ and ThO₂ using synchrotron X-ray diffraction and a hydrothermal diamond anvil cell

Energy Technology Data Exchange (ETDEWEB)

Palomares, Raul I.; Tracy, Cameron L.; Zhang, Fuxiang; Park, Changyong; Popov, Dmitry; Trautmann, Christina; Ewing, Rodney C.; Lang, Maik

2015-04-16

Hydrothermal diamond anvil cells (HDACs) provide facile means for coupling synchrotron X-ray techniques with pressure up to 10 GPa and temperature up to 1300 K. This manuscript reports on an application of the HDAC as an ambient-pressure sample environment for performingin situdefect annealing and thermal expansion studies of swift heavy ion irradiated CeO₂and ThO₂using synchrotron X-ray diffraction. The advantages of thein situHDAC technique over conventional annealing methods include rapid temperature ramping and quench times, high-resolution measurement capability, simultaneous annealing of multiple samples, and prolonged temperature and apparatus stability at high temperatures. Isochronal annealing between 300 and 1100 K revealed two-stage and one-stage defect recovery processes for irradiated CeO₂and ThO₂, respectively, indicating that the morphology of the defects produced by swift heavy ion irradiation of these two materials differs significantly. These results suggest that electronic configuration plays a major role in both the radiation-induced defect production and high-temperature defect recovery mechanisms of CeO₂and ThO₂.

Swift heavy ions induced material reorganization on surface of barium fluoride thin films

International Nuclear Information System (INIS)

Pandey, Ratnesh K.; Kumar, Manvendra; Pandey, Avinash C.; Khan, Saif A.; Singh, Udai B.; Tripathi, Ambuj; Avasthi, D.K.

2014-01-01

Swift heavy ions induced thermal spike is found to result in a highly excited nanometric cylindrical zone in insulating materials. The resulting transient local melting (taking place on ps timescale) results in formation of a defect-rich or amorphous latent track. In the present work we are reporting evolution of lamellae structure on surface of BaF_2 thin films due to irradiation with 100 MeV Au"+"8 ions. These thin films of BaF_2 have been deposited on glass substrate using electron beam evaporation method and have a thickness of 200 nm. Irradiation was performed at liquid nitrogen temperature and at an angle of incidence of 15° shows the scanning electron microscopic (SEM) images of evolution of lamellae pattern. A cracking perpendicular to the beam direction at low fluences of 5x10"1"2 ions/cm"2 is observed, while at higher fluences of 2x10"1"3 ions/cm"2, the material started to shrink. After application of further high fluences up to 2x10"1"4 ions/cm"2, the BaF_2 layer was reorganized in form of lamellae having orientation as found for the cracks and normal to the beam direction. A self-organized phenomenon in SHI irradiated NiO layers, resulting in formation of 100-nm-thick and 1-µm-high NiO lamellae has also been observed. (author)

The effect of He and swift heavy ions on nanocrystalline zirconium nitride

Energy Technology Data Exchange (ETDEWEB)

Janse van Vuuren, A., E-mail: arnojvv@gmail.com [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Skuratov, V.A. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Uglov, V.V. [Belarusian State University, Minsk (Belarus); Petrovich, S. [VINCA Institute of Nuclear Sciences, Belgrade University, Belgrade (Serbia)

2014-05-01

Recent studies have shown that swift heavy ion irradiation may significantly modulate hydrogen and helium behaviour in some materials. This phenomenon is of considerable practical interest for ceramics in general and also for candidate materials for use as inert matrix fuel hosts. These materials will accumulate helium via (n, α) reactions and will also be subjected to irradiation by fission fragments. Cross-sectional transmission electron microscopy and scanning electron microscopy was used to study nanocrystalline ZrN irradiated with 30 keV He to fluences between 10{sup 16} and 5 × 10{sup 16} cm{sup −2}, 167 MeV Xe to fluences between 5 × 10{sup 13} and 10{sup 14} cm{sup −2} and also 695 MeV Bi to a fluence of 1.5 × 10{sup 13} cm{sup −2}. He/Bi and He/Xe irradiated samples were annealed at temperatures between 600 and 1000 °C and were analysed using SEM, XTEM and selected area diffraction. The results indicated that post irradiation heat treatment induces exfoliation at a depth that corresponds to the end-of-range of 30 keV He ions. SEM and XTEM analysis of He/Xe irradiated samples revealed that electronic excitation effects, due to Xe ions, suppress helium blister formation and consequently the exfoliation processes. He/Bi samples however do not show the same effects. This suggests that nanocrystalline ZrN is prone to the formation of He blisters which may ultimately lead material failure. These effects may however be mitigated by electronic excitation effects from certain SHIs.

The effect of He and swift heavy ions on nanocrystalline zirconium nitride

International Nuclear Information System (INIS)

Janse van Vuuren, A.; Neethling, J.H.; Skuratov, V.A.; Uglov, V.V.; Petrovich, S.

2014-01-01

Recent studies have shown that swift heavy ion irradiation may significantly modulate hydrogen and helium behaviour in some materials. This phenomenon is of considerable practical interest for ceramics in general and also for candidate materials for use as inert matrix fuel hosts. These materials will accumulate helium via (n, α) reactions and will also be subjected to irradiation by fission fragments. Cross-sectional transmission electron microscopy and scanning electron microscopy was used to study nanocrystalline ZrN irradiated with 30 keV He to fluences between 10 16 and 5 × 10 16 cm −2 , 167 MeV Xe to fluences between 5 × 10 13 and 10 14 cm −2 and also 695 MeV Bi to a fluence of 1.5 × 10 13 cm −2 . He/Bi and He/Xe irradiated samples were annealed at temperatures between 600 and 1000 °C and were analysed using SEM, XTEM and selected area diffraction. The results indicated that post irradiation heat treatment induces exfoliation at a depth that corresponds to the end-of-range of 30 keV He ions. SEM and XTEM analysis of He/Xe irradiated samples revealed that electronic excitation effects, due to Xe ions, suppress helium blister formation and consequently the exfoliation processes. He/Bi samples however do not show the same effects. This suggests that nanocrystalline ZrN is prone to the formation of He blisters which may ultimately lead material failure. These effects may however be mitigated by electronic excitation effects from certain SHIs

Compositional, structural and optical changes of polyimide irradiated by heavy ions

Czech Academy of Sciences Publication Activity Database

Mikšová, Romana; Macková, Anna; Cutroneo, Mariapompea; Slepička, P.; Matoušek, J.

2016-01-01

Roč. 48, č. 7 (2016), s. 566-569 ISSN 0142-2421. [16th European Conference on Applications of Surface and Interface Analysis (ECASIA). Granada, 28.09.2015-01.10.2015] R&D Projects: GA MŠk(CZ) LM2011019; GA ČR GA15-01602S Institutional support: RVO:61389005 Keywords : polyimide * polymer degradation * swift heavy-ion irradiation * surface morphology Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.132, year: 2016

Effect of swift heavy O7+ ion radiations on conductivity of lithium based polymer blend electrolyte

Science.gov (United States)

Joge, Prajakta; Kanchan, D. K.; Sharma, Poonam; Jayswal, Manish; Avasthi, D. K.

2014-07-01

In the present work, effect of swift heavy O7+ ion of 80 MeV of different fluences, on conductivity of [PVA(47.5)-PEO(47.5)-LiCF3SO3(5)]-EC(8) polymeric films has been investigated using ac impedance spectroscopy. The power law exponent n, hopping frequency ωh and activation energies for conduction Eac and relaxation Ear, have been investigated for different fluences. The DSC measurements are carried out in order to investigate the variations in the degree of crystallinity and thermal parameters (Tm) of the blend specimen prior and after irradiation. The Fourier Transform Infrared (FT-IR) measurements are carried out in order to investigate the changes in the vibrational modes of molecules upon irradiation. The FT-IR measurements corroborate the formation of amorphous phase in the blend matrix after irradiation. The conductivity is found to be optimum at the fluence of 1×1012 ions/cm2. The enhancement and the improvement in the electrolytic properties of PVA-PEO blend upon O7+ ion irradiation have been observed.

The sputtering of the deformed gold under irradiation with krypton swift heavy ions

International Nuclear Information System (INIS)

Didyk, A.Yu.; Semina, V.K.; Hofman, A.

2002-01-01

The results about sputtering yield of gold irradiated by 86 Kr ions with high inelastic energy losses up to a fluence of 10 14 ion/cm 2 are presented. It was shown that the sputtering (evaporation) yield strongly depends on the initial defect concentration in gold. The sputtering yield begins to grow very strongly with the increasing of damage created by heavy ion elastic and inelastic energy losses. The temperature on the surface in the area around krypton ion trajectory is much higher than the melting and evaporation temperatures for gold as follows from calculations with the various expressions and models

Modification of photosensing property of CdS–Bi{sub 2}S{sub 3} bi-layer by thermal annealing and swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Shaikh, Shaheed U.; Siddiqui, Farha Y. [Thin Film and Nanotechnology Laboratory, Department of Physics (India); Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India); Singh, Fouran; Kulriya, Pawan K. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Phase, D.M. [UGC DAE Consortium for Scientific Research, Khandwa Road, Indore 452017 (India); Sharma, Ramphal, E-mail: ramphalsharma@yahoo.com [Thin Film and Nanotechnology Laboratory, Department of Physics (India); Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India)

2016-02-01

The CdS–Bi{sub 2}S{sub 3} bi-layer thin films have been deposited on Indium Tin Oxide (ITO) glass substrates at room temperature by Chemical Bath Deposition Technique (CBD) and bi-layer thin films were annealed in air atmosphere for 1 h at 250 {sup °}C. The air annealed sample was irradiated using Au{sup 9+} ions at the fluence 5 × 10{sup 11} ion/cm{sup 2} with 120 MeV energy. Effects of Swift Heavy Ion (SHI) irradiation on CdS–Bi{sub 2}S{sub 3} bi-layer thin films were studied. The results are explained on the basis annealing and high electronic excitation, using X-ray diffraction (XRD), Selective Electron Area Diffraction (SEAD), Atomic Force Microscopy (AFM), Raman Spectroscopy, UV spectroscopy and I–V characteristics. The photosensing property after illumination of visible light over the samples is studied. These as-deposited, annealed and irradiated bi-layer thin films are used to sense visible light at room temperature. - Graphical abstract: Schematic illustration of CdS–Bi{sub 2}S{sub 3} bi-layer thin film (a) As-deposited (b) Annealed (c) irradiated sample respectively (d) Model of bi-layer photosensor device (e) Graph of illumination intensity verses photosensitivity. - Highlights: • CdS–Bi{sub 2}S{sub 3} bi-layer thin film prepared at room temperature. • Irradiated using Au{sup 9+} ions at the fluence of 5 × 10{sup 11} ion/cm{sup 2} with 120 MeV energy. • Study of modification induced by irradiations. • Study of Photosensitivity after annealing and irradiation.

Oxide glass structure evolution under swift heavy ion irradiation

International Nuclear Information System (INIS)

Mendoza, C.; Peuget, S.; Charpentier, T.; Moskura, M.; Caraballo, R.; Bouty, O.; Mir, A.H.; Monnet, I.; Grygiel, C.; Jegou, C.

2014-01-01

Highlights: • Structure of SHI irradiated glass is similar to the one of a hyper quenched glass. • D2 Raman band associated to 3 members ring is only observed in irradiated glass. • Irradiated state seems slightly different to an equilibrated liquid quenched rapidly. - Abstract: The effects of ion tracks on the structure of oxide glasses were examined by irradiating a silica glass and two borosilicate glass specimens containing 3 and 6 oxides with krypton ions (74 MeV) and xenon ions (92 MeV). Structural changes in the glass were observed by Raman and nuclear magnetic resonance spectroscopy using a multinuclear approach ( 11 B, 23 Na, 27 Al and 29 Si). The structure of irradiated silica glass resembles a structure quenched at very high temperature. Both borosilicate glass specimens exhibited depolymerization of the borosilicate network, a lower boron coordination number, and a change in the role of a fraction of the sodium atoms after irradiation, suggesting that the final borosilicate glass structures were quenched from a high temperature state. In addition, a sharp increase in the concentration of three membered silica rings and the presence of large amounts of penta- and hexacoordinate aluminum in the irradiated 6-oxide glass suggest that the irradiated glass is different from a liquid quenched at equilibrium, but it is rather obtained from a nonequilibrium liquid that is partially relaxed by very rapid quenching within the ion tracks

Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

International Nuclear Information System (INIS)

Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

2012-01-01

In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

Defect creation by swift heavy ions: materials modifications in the electronic stopping power regime

International Nuclear Information System (INIS)

Toulemonde, M.

1994-01-01

The material modifications by swift heavy ions in the electronic stopping power regime are puzzling question: How the energy deposited on the electrons can induced material modifications? In order to answer to this question, the modifications induced in non-radiolytic materials are described and compared to the predictions. In first part the main experimental observations is presented taking into account the irradiation parameters. Then it is shown that the initial phases of the material are very important. Amorphous materials, whatever it is a metal, a semiconductor or an insulator, are till now all sensitive to the high electronic excitation induced by the slowing down of a swift heavy ion. All oxide materials, insulators or conductors, are also sensitive even the MgO, one of most famous exceptions. Crystalline metals or semiconductors are intermediate cases: some are insensitive like Cu and Si respectively while Fe and GeS are sensitive. The main feature is the different values of the electronic stopping power threshold of material modifications. The evolution of the damage creation is described showing that the damage morphology seems to be the same whatever the material is amorphous or crystalline. In second part a try of interpretation of the experimental results will be done on the behalf of the two following models: The Coulomb spike and the thermal spike models. It will be shown that there is some agreement with limited predictions made in the framework of the Coulomb spike model. But it appears that the thermal spike model can account for most of the experimental data using only one free parameter: The electron-phonon strength which is a physical characteristic of the irradiated material. (author). 4 figs., 1 tab., 64 refs

Effect of 100 MeV swift heavy ions [silver (Ag8+)] on morphological and electrical properties of polypyrrole

Science.gov (United States)

Kaur, Amarjeet; Dhillon, Anju; Avasthi, D. K.

2009-10-01

Polypyrrole (PPY) films were prepared by the electrochemical polymerization technique. The fully undoped samples were irradiated with different fluences ranging from 1010 to 1012 ions/cm2 of 100 MeV silver (Ag8+) ions. In order to explain the effect of these radiations, a comparative study of samples before and after irradiation was performed by using various techniques such as surface electron microscopy, atomic force microscopy, and X-ray diffraction. With an increase in fluence, the surface structure of PPY films becomes smoother, and the conductivity increases by two orders, which has been explained in light of reordering of polymer chains. The temperature dependence of the dc conductivity of irradiated as well as unirradiated samples has been investigated at 77-300 K. The charge transport properties before and after irradiation are retained although conductivity increases. It has been proposed that swift heavy ion irradiation affects the interchain conductivity. The conductivity of irradiated samples is stable under atmospheric conditions for more than 9 months. The present investigations open up the scope for the applicability of irradiated conducting polymers as microstructures with defined conductivity for sensor applications.

Effect of 100 MeV swift heavy ions [silver (Ag8+)] on morphological and electrical properties of polypyrrole

International Nuclear Information System (INIS)

Kaur, Amarjeet; Dhillon, Anju; Avasthi, D. K.

2009-01-01

Polypyrrole (PPY) films were prepared by the electrochemical polymerization technique. The fully undoped samples were irradiated with different fluences ranging from 10 10 to 10 12 ions/cm 2 of 100 MeV silver (Ag 8+ ) ions. In order to explain the effect of these radiations, a comparative study of samples before and after irradiation was performed by using various techniques such as surface electron microscopy, atomic force microscopy, and X-ray diffraction. With an increase in fluence, the surface structure of PPY films becomes smoother, and the conductivity increases by two orders, which has been explained in light of reordering of polymer chains. The temperature dependence of the dc conductivity of irradiated as well as unirradiated samples has been investigated at 77-300 K. The charge transport properties before and after irradiation are retained although conductivity increases. It has been proposed that swift heavy ion irradiation affects the interchain conductivity. The conductivity of irradiated samples is stable under atmospheric conditions for more than 9 months. The present investigations open up the scope for the applicability of irradiated conducting polymers as microstructures with defined conductivity for sensor applications.

Experimental aspects of S.H.I.C. (Swift Heavy Ion Channeling)

International Nuclear Information System (INIS)

Quere, Y.; Mory, J.; Castro Faria, N.V. de; Chevallier, M.; Gaillard, M.J.; Genre, R.; Farizon-Mazuy, B.; Poizat, J.C.; Remillieux, J.; Dural, J.; Toulemonde, M.; Hage-Ali, M.

1989-01-01

We have studied the behaviour of swift heavy ions, of initial charge Z 0 , transmitted in a crystal. More precisely we have measured, for various values of Z 0 , the mean stopping power experienced by the ions of exit charge Z, together with the charge distribution n(Z). In this short note, we describe briefly the instrumental set-up, and give two specific results which make it possible to appreciate the accuracy and sensitivity of the experiment

Effect of swift heavy ion irradiation on structural, optical and electrical properties of Cd2SnO4 thin films

International Nuclear Information System (INIS)

Kumaravel, R.; Gokulakrishnan, V.; Ramamurthi, K.; Sulania, Indra; Kanjilal, D.; Asokan, K.; Avasthi, D.K.

2010-01-01

Transparent conducting cadmium stannate thin films were prepared by spray pyrolysis method on Corning substrate at a temperature of 525 o C. The prepared films are irradiated using 120 MeV swift Ag 9+ ions for the fluence in the range 1 x 10 12 to 1 x 10 13 ions cm -2 and the structural, optical and electrical properties were studied. The intensity of the film decreases with increasing ion fluence and amorphization takes place at higher fluence (1 x 10 13 ions cm -2 ). The transmittance of the films decreases with increasing ion fluence and also the band gap value decreases with increasing ion fluence. The resistivity of the film increased from 2.66 x 10 -3 Ω cm (pristine) to 5.57 x 10 -3 Ω cm for the film irradiated with 1 x 10 13 ions cm -2 . The mobility of the film decreased from 31 to 12 cm 2 /V s for the film irradiated with the fluence of 1 x 10 13 ions cm -2 .

Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

Science.gov (United States)

Kachurin, G. A.; Cherkova, S. G.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.; Skuratov, V. A.

2012-07-01

Three hundred and twenty nanometer-thick SiO2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 1012 cm-2 and 1014 cm-2, or with 700 MeV Bi ions in the fluence range of 3 × 1012-1 × 1013 cm-2. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm-1, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO2. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ˜10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

International Nuclear Information System (INIS)

Kachurin, G.A.; Cherkova, S.G.; Marin, D.V.; Kesler, V.G.; Volodin, V.A.; Skuratov, V.A.

2012-01-01

Three hundred and twenty nanometer-thick SiO 2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 10 12 cm −2 and 10 14 cm −2 , or with 700 MeV Bi ions in the fluence range of 3 × 10 12 –1 × 10 13 cm −2 . After irradiation the yellow–orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950–1150 cm −1 , Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si–O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO 2 . Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ∼10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

Self-organised nano-structuring of thin oxide-films under swift heavy ion bombardment

International Nuclear Information System (INIS)

Bolse, Wolfgang

2006-01-01

Surface instabilities and the resulting self-organisation processes play an important role in nano-technology since they allow for large-array nano-structuring. We have recently found that the occurrence of such instabilities in thin film systems can be triggered by energetic ion bombardment and the subsequent self-assembly of the surface can be nicely controlled by fine-tuning of the irradiation conditions. The role of the ion in such processes is of double nature: If the instability is latently present already in the virgin sample, but self-assembly cannot take place because of kinetic barriers, the ion impact may just supply the necessary atomic mobility. On the other hand, the surface may become instable due to the ion beam induced material modifications and further irradiation then results in its reorganisation. In the present paper, we will review recently observed nano-scale self-organisation processes in thin oxide-films induced by the irradiation with swift heavy ions (SHI) at some MeV/amu energies. The first example is about SHI induced dewetting, which is driven by capillary forces already present in the as-deposited samples. The achieved dewetting pattern show an amazing similarity to those observed for liquid polymer films on Si, although in the present case the samples were kept at 80 K and hence have never reached their melting point. The second example is about self-organised lamellae formation driven by planar stresses, which are induced by SHI bombardment under grazing incidence and result in a surface instability and anisotropic plastic deformation (hammering effect). Taking advantage of these effects and modifying the irradiation procedure, we were able to generate more complex structures like NiO-'nano-towers' of 2 μm height and 200 nm in diameter

Silver ion beam irradiation effects on poly(lactide-co-glycolide) (PLGA)/clay nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Kaur, Manpreet; Singh, Surinder [Guru Nanak Dev University, Department of Physics, Amritsar (India); Mehta, Rajeev [Thapar University, Department of Chemical Engineering, Patiala (India)

2014-12-15

Swift heavy ions induced modification of thin films of blends of poly(lactide-co-glycolide) (PLGA) (50:50) with organically modified nanoclay (Cloisite {sup registered} 30B) has been studied, using optical, structural and surface morphological analysis. Presence of nanoclay is found to enhance the properties of this degradable copolymer by reducing the rate of degradation even at high irradiation fluence. Optical and structural analysis of the polymer nanocomposites suggests that both the cross-linking and chain scission phenomenon are caused by swift heavy ion irradiation. XRD measurements show intercalation of PLGA in the clay galleries. Surface morphology of a nanocomposite indicates significant changes after irradiation at various fluences. (orig.)

Nucleation of 2D nanoislands in surface thermal spikes from swift heavy ions

International Nuclear Information System (INIS)

Volkov, Alexander E.; Sorokin, Michael V.

2003-01-01

Possibility of nucleation of nanoislands in the surface thermal spikes caused by swift heavy ions or intense femptosecond laser pulses is investigated. Nanoislands may occur when the characteristic nucleation time becomes shorter than that cooling down of the thermal spot. The values of system parameters favorable for the nucleation are estimated

The near-infrared waveguide properties of an LGS crystal formed by swift Kr8+ ion irradiation

Science.gov (United States)

Zhou, Yu-Fan; Liu, Peng; Liu, Tao; Zhang, Lian; Sun, Jian-Rong; Wang, Zhi-Guang; Wang, Xue-Lin

2013-11-01

In this work, we report on the optical properties in the near-infrared region of a LGS crystal planar waveguide formed by swift heavy ion irradiation. The planar optical waveguide in a LGS crystal was fabricated by 330 MeV Kr8+-ion implantation at a fluence of 1 × 1012 cm-2. The initial beam had an energy of 2.1 GeV and was slowed down by passing it through a 259 μm thick Al foil. The guided mode was measured using a prism coupler at a wavelength of 1539 nm. The near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. The FD-BPM was used to simulate the guided mode profile. The lattice damage induced by SHI irradiation in the LGS crystal was studied using micro-Raman spectroscopy. The Raman spectra are consistent with the stopping power distributions of the Kr8+ ions simulated by SRIM and with the micro-photograph of the waveguide taken by a microscope using polarized light.

The near-infrared waveguide properties of an LGS crystal formed by swift Kr8+ ion irradiation

International Nuclear Information System (INIS)

Zhou, Yu-Fan; Liu, Peng; Liu, Tao; Zhang, Lian; Sun, Jian-Rong; Wang, Zhi-Guang; Wang, Xue-Lin

2013-01-01

In this work, we report on the optical properties in the near-infrared region of a LGS crystal planar waveguide formed by swift heavy ion irradiation. The planar optical waveguide in a LGS crystal was fabricated by 330 MeV Kr 8+ -ion implantation at a fluence of 1 × 10 12 cm −2 . The initial beam had an energy of 2.1 GeV and was slowed down by passing it through a 259 μm thick Al foil. The guided mode was measured using a prism coupler at a wavelength of 1539 nm. The near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. The FD-BPM was used to simulate the guided mode profile. The lattice damage induced by SHI irradiation in the LGS crystal was studied using micro-Raman spectroscopy. The Raman spectra are consistent with the stopping power distributions of the Kr 8+ ions simulated by SRIM and with the micro-photograph of the waveguide taken by a microscope using polarized light

Swift heavy ion induced modification in morphological and physico-chemical properties of tin oxide nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Jaiswal, Manoj Kumar [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Kumar, Rajesh, E-mail: rajeshkumaripu@gmail.com [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India)

2013-11-15

Nanocomposite thin films of tin oxide (SnO{sub 2})/titanium oxide (TiO{sub 2}) were grown on silicon (1 0 0) substrates by electron beam evaporation deposition technique using sintered nanocomposite pellet of SnO{sub 2}/TiO{sub 2} in the percentage ratio of 95:5. Sintering of the nanocomposite pellet was done at 1300 °C for 24 h. The thicknesses of these films were measured to be 100 nm during deposition using piezo-sensor attached to the deposition chamber. TiO{sub 2} doped SnO{sub 2} nanocomposite films were irradiated by 100 MeV Au{sup 8+} ion beam at fluence range varying from 1 × 10{sup 11} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2} at Inter University Accelerator Center (IUAC), New Delhi, India. Chemical properties of pristine and ion irradiation modified thin films were characterized by Fourier Transform Infrared (FTIR) spectroscopy. FTIR peak at 610 cm{sup −1} confirms the presence of O–Sn–O bridge of tin (IV) oxide signifying the composite nature of pristine and irradiated thin films. Atomic Force Microscope (AFM) in tapping mode was used to study the surface morphology and grain growth due to swift heavy ion irradiation at different fluencies. Grain size calculations obtained from sectional analysis of AFM images were compared with results obtained from Glancing Angle X-ray Diffraction (GAXRD) measurements using Scherrer’s formulae. Phase transformation due to irradiation was observed from Glancing Angle X-ray Diffraction (GAXRD) results. The prominent 2θ peaks observed in GAXRD spectrum are at 30.67°, 32.08°, 43.91°, 44.91° and 52.35° in the irradiated films.

Stability of Y-Ti-O nanoparticles in ODS alloys during heat treatment and high temperature swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Skuratov, V.A. [FLNR, JINR, Dubna (Russian Federation); National Research Nuclear University MEPhI, Moscow (Russian Federation); Dubna State University, Dubna (Russian Federation); Sohatsky, A.S.; Kornieieva, K. [FLNR, JINR, Dubna (Russian Federation); O' Connell, J.H.; Neethling, J.H. [CHRTEM, NMMU, Port Elizabeth (South Africa); Nikitina, A.A.; Ageev, V.S. [JSC VNIINM, Moscow (Russian Federation); Zdorovets, M. [Institute of Nuclear Physics, Astana (Kazakhstan); Ural Federal University, Yekaterinburg (Russian Federation); Volkov, A.D. [Nazarbayev University, Astana (Kazakhstan)

2016-12-15

Aim of this report is to compare the morphology of swift (167 and 220 MeV) Xe ion induced latent tracks in Y{sub 2}Ti{sub 2}O{sub 7} nanoparticles during post-irradiation heat treatment and after irradiation at different temperatures in pre-thinned TEM foils and TEM targets prepared from hundreds microns thick irradiated oxide dispersion strengthened (ODS) steel. No difference in track parameters was found in room temperature irradiated nanoparticles in pre-thinned and conventional samples. Microstructural data gathered from pre-thinned foils irradiated in the temperature range 350-650 C or annealed at similar temperatures demonstrate that amorphous latent tracks interact with the surrounding matrix, changing the track and nanoparticle morphology, while such effect is not observed in conventional ODS material treated at the same conditions. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Femto-clock for the electron kinetics in swift heavy ion tracks

Czech Academy of Sciences Publication Activity Database

Medvedev, Nikita; Volkov, A.E.

2017-01-01

Roč. 50, č. 44 (2017), s. 1-11, č. článku 445302. ISSN 0022-3727 R&D Projects: GA MŠk LG15013; GA MŠk(CZ) LM2015083 Institutional support: RVO:68378271 Keywords : swift heavy ions * electron kinetics * femto-clock * femtosecond resolution * spectroscopy * radiative decay Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.588, year: 2016

Investigation of the effects of swift heavy ion on the properties of yttrium calcium oxyborate (YCOB) NLO crystal

International Nuclear Information System (INIS)

Kalidasan, M.; Dhanasekaran, R.; Asokan, K.

2012-01-01

Heavy ion irradiation is a successful tool to create an effective refractive index change in a nonlinear optical (NLO) crystal surface in several micron thickness. It leads to the fabrication of non-leaky optical guiding structures. As irradiation can create the property changes with low ion fluence, it will be an alternative for the ion implantation. The present work is related to the creation of micrometer level surface modification in the YCa_4O(BO_3)_3 NLO crystal by the irradiation of 120 MeV Au"9"+ swift heavy ion and studying the changes in property of the material. The irradiation was carried out in the Materials Science beam line of the pelletron accelerator at Inter University Accelerator Centre, New Delhi. YCOB crystals were grown by high temperature flux technique in our laboratory. YCOB belongs to borate family of crystals which are superior to other NLO crystals due to their structural and optical features. Borate crystal can produce UV and deep UV laser through harmonic generation with good optical conversion efficiency. YCOB crystal attracted because of its high laser damage threshold, long nonlinear conversion length and large aperture scaling capability to be employed in high power laser applications. The Stopping and Range of Ions in Matter (SRIM) simulation has been carried out to study the variation of electronic (S_e) and nuclear (S_n) energy losses with penetration depth and energy of gold ions in YCOB crystal. Refractive index change was observed in the YCOB crystal due to the irradiation of 120 MeV Au"9"+ ion. The UV-Visible studies show optical band gap shift and confirms the refractive index change created in the YCOB crystal. The morphology of the irradiated crystal was analysed with scanning electron microscopy. The inhomogeneous broadening of emission curve of the YCOB crystal takes place due to ion irradiation which is analyzed in detail. From the fluorescence decay curves of pristine and irradiated crystals the excited state

A comparative investigation on ion impact parameters and TL response of Y{sub 2}O{sub 3}:Tb{sup 3+} nanophosphor exposed to swift heavy ions for space dosimetry

Energy Technology Data Exchange (ETDEWEB)

Som, S., E-mail: sudipta.som@gmail.com [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300 (South Africa); Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Dutta, S.; Chowdhury, M. [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Kumar, Vijay; Kumar, Vinod; Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300 (South Africa); Sharma, S.K., E-mail: sksharma.ism@gmail.com [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India)

2014-03-15

Highlights: • This paper discusses the SHI induced effect on thermoluminescence properties. • Ni{sup 7+}, Ag{sup 9+} and Au{sup 8+} ions are chosen for irradiation purpose. • Comparison between these ions effect is carried out. • Au{sup 8+} ion is more pronounced and suitable for space dosimetry in Y{sub 2}O{sub 3}:Tb{sup 3+}. -- Abstract: This paper reports on a comparative study on the structural and thermoluminescence (TL) modifications of Y{sub 2}O{sub 3}:Tb{sup 3+} phosphor induced by 150 MeV Ni{sup 7+}, 120 MeV Ag{sup 9+} and 110 MeV Au{sup 8+} swift heavy ions in the fluence range 1 × 10{sup 11}–1 × 10{sup 13} ions/cm{sup 2}. SRIM calculations were performed in order to correlate the change in TL properties of various ions irradiated phosphors. It shows that the 110 MeV Au{sup 8+} ions created a high concentration of defects. X-ray diffraction, transmission electron microscopy and Fourier transform infrared spectroscopic studies confirm the loss of crystallinity of the phosphors after ions irradiation, which is high in the case of the Au{sup 8+} ion irradiation. Structural refinement by Rietveld method yields the various structural parameters of the ion irradiated phosphors. TL glow curves of the ion irradiated phosphors show a small shift in the position of the peaks along with an increase in intensity with the increase in ions fluence. Trapping parameters of the ions irradiated phosphors were calculated from the TL data using various glow curve analysis methods. The results can be correlated on the basis of the linear energy transfer of the irradiated ions. These obtained results can be used successfully in heavy ions dosimetry for space craft and air crew.

Diffusion kinetics of the glucose/glucose oxidase system in swift heavy ion track-based biosensors

Energy Technology Data Exchange (ETDEWEB)

Fink, Dietmar, E-mail: fink@xanum.uam.mx [Nuclear Physics Institute, 25068 Řež (Czech Republic); Departamento de Fisica, Universidad Autónoma Metropolitana-Iztapalapa, PO Box 55-534, 09340 México, DF (Mexico); Vacik, Jiri; Hnatowicz, V. [Nuclear Physics Institute, 25068 Řež (Czech Republic); Muñoz Hernandez, G. [Departamento de Fisica, Universidad Autónoma Metropolitana-Iztapalapa, PO Box 55-534, 09340 México, DF (Mexico); Garcia Arrelano, H. [Departamento de Ciencias Ambientales, División de Ciencias Biológicas y de la Salud, Universidad Autónoma Metropolitana-Lerma, Av. de las Garzas No. 10, Col. El Panteón, Lerma de Villada, Municipio de Lerma, Estado de México CP 52005 (Mexico); Alfonta, Lital [Avram and Stella Goldstein-Goren Department of Biotechnology Engineering, Ben-Gurion University of the Negev, PO Box 653, Beer-Sheva 84105 (Israel); Kiv, Arik [Department of Materials Engineering, Ben-Gurion University of the Negev, PO Box 653, Beer-Sheva 84105 (Israel)

2017-05-01

Highlights: • Application of swift heavy ion tracks in biosensing. • Obtaining yet unknown diffusion coefficients of organic matter across etched ion tracks. • Obtaining diffusion coefficients of organics in etched ion tracks of biosensors. • Comparison with Renkin’s equation to predict the effective etched track diameter in the given experiments. - Abstract: For understanding of the diffusion kinetics and their optimization in swift heavy ion track-based biosensors, recently a diffusion simulation was performed. This simulation aimed at yielding the degree of enrichment of the enzymatic reaction products in the highly confined space of the etched ion tracks. A bunch of curves was obtained for the description of such sensors that depend only on the ratio of the diffusion coefficient of the products to that of the analyte within the tracks. As hitherto none of these two diffusion coefficients is accurately known, the present work was undertaken. The results of this paper allow one to quantify the previous simulation and hence yield realistic predictions of glucose-based biosensors. At this occasion, also the influence of the etched track radius on the diffusion coefficients was measured and compared with earlier prediction.

Mechanism of the monoclinic-to-tetragonal phase transition induced in zirconia and hafnia by swift heavy ions

International Nuclear Information System (INIS)

Benyagoub, Abdenacer

2005-01-01

Recent results demonstrated that defect formation or amorphization are not the only structural changes induced by swift heavy ions in crystalline materials and that under certain circumstances crystalline-to-crystalline phase transitions can also occur. For instance, it was found that both zirconia and hafnia transform from the monoclinic to the tetragonal phase with a kinetics involving a double ion impact process. In order to understand the origin of this ion-beam induced phase transition, the behavior of these twin oxides was analyzed and compared. In fact, the likeness of these materials offered the unique opportunity to impose drastic constraints on the possible models proposed to explain the creation of atomic displacements in the wake of swift heavy ions. This comparison clearly suggests that the thermal spike is the most appropriate process which governs the transition from the monoclinic to the tetragonal phase in zirconia and hafnia

Shaping of Au nanoparticles embedded in various layered structures by swift heavy ion beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Dawi, E.A., E-mail: elmuez.dawi@gmail.com [Ajman University of Science and Technology, Basic Science and Education, Physics Department, P.O. Box 346 (United Arab Emirates); Debye Institute for Nanomaterials, Nanophotonics Section, Utrecht University, P.O. Box 80000, 3508 TA Utrecht (Netherlands); ArnoldBik, W.M. [Eindhoven University of Technology, Irradiation Technology, 5600 GM Eindhoven (Netherlands); Ackermann, R.; Habraken, F.H.P.M. [Debye Institute for Nanomaterials, Nanophotonics Section, Utrecht University, P.O. Box 80000, 3508 TA Utrecht (Netherlands)

2016-10-01

We present a novel method to extend the ion-beam induced shaping of metallic nanoparticles in various layered structures. Monodisperse Au nanoparticles having mean diameter of 30 nm and their ion-shaping process is investigated for a limited number of experimental conditions. Au nanoparticles were embedded within a single plane in various layered structures of silicon nitride films (Si{sub 3}N{sub 4}), combinations of oxide-nitride films (SiO{sub 2}-Si{sub 3}N{sub 4}) and amorphous silicon films (a-Si) and have been sequentially irradiated at 300 K at normal incidence with 50 and 25 MeV Ag ions, respectively. Under irradiation with heavy Ag ions and with sequential increase of the irradiation fluence, the evolution of the Au peak derived from the Rutherford Backscattering Spectrometry show broadening in Au peak, which indicates that the Au becomes distributed over a larger depth region, indicative of the elongation of the nanoparticles. The latter is observed almost for every layer structure investigated except for Au nanoparticles embedded in pure a-Si matrix. The largest elongation rate at all fluences is found for the Au nanoparticles encapsulated in pure Si{sub 3}N{sub 4} films. For all irradiation energy applied, we again demonstrate the existence of both threshold and saturation fluences for the elongation effects mentioned.

A thermal spike model of the amorphization of insulators by high-energy heavy-ion irradiation

International Nuclear Information System (INIS)

Szenes, G.

1995-01-01

Recently, experimental data on magnetic insulators irradiated with swift heavy ions were analyzed by a new thermal spike model and good quantitative agreement was achieved. Analytical expressions were given for the evolution of latent tracks with the electronic stopping power S e of bombarding ions and a relation between the thermal properties of the target and the threshold value of S e was proposed and proved experimentally. In the present paper, after a brief review of the model, the temperature dependence of latent track formation is discussed and the predictions of the model are compared with the available experimental results

The near-infrared waveguide properties of an LGS crystal formed by swift Kr{sup 8+} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Zhou, Yu-Fan; Liu, Peng; Liu, Tao; Zhang, Lian [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University, Jinan 250100 (China); Sun, Jian-Rong; Wang, Zhi-Guang [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Wang, Xue-Lin, E-mail: xuelinwang@sdu.edu.cn [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University, Jinan 250100 (China)

2013-11-15

In this work, we report on the optical properties in the near-infrared region of a LGS crystal planar waveguide formed by swift heavy ion irradiation. The planar optical waveguide in a LGS crystal was fabricated by 330 MeV Kr{sup 8+}-ion implantation at a fluence of 1 × 10{sup 12} cm{sup −2}. The initial beam had an energy of 2.1 GeV and was slowed down by passing it through a 259 μm thick Al foil. The guided mode was measured using a prism coupler at a wavelength of 1539 nm. The near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. The FD-BPM was used to simulate the guided mode profile. The lattice damage induced by SHI irradiation in the LGS crystal was studied using micro-Raman spectroscopy. The Raman spectra are consistent with the stopping power distributions of the Kr{sup 8+} ions simulated by SRIM and with the micro-photograph of the waveguide taken by a microscope using polarized light.

Swift heavy ion induced modification of aliphatic polymers

Energy Technology Data Exchange (ETDEWEB)

Hossain, Umme Habiba

2015-01-15

In this thesis, the high energy heavy ion induced modification of aliphatic polymers is studied. Two polymer groups, namely polyvinyl polymers (PVF, PVAc, PVA and PMMA) and fluoropolymers (PVDF, ETFE, PFA and FEP) were used in this work. Polyvinyl polymers were investigated since they will be used as insulating materials in the superconducting magnets of the new ion accelerators of the planned International Facility for Antiproton and Ion Research (FAIR) at the GSI Helmholtz-Centre of Heavy Ion Research (GSI) in Darmstadt. In order to study ion-beam induced degradation, all polymer foils were irradiated at the GSI linear accelerator UNILAC using several projectiles (U, Au, Sm, Xe) and experimentation sites (beam lines X0 and M3) over a large fluence regime (1 x 10{sup 10} - 5 x 10{sup 12} ions/cm{sup 2}). Five independent techniques, namely infrared (FT-IR) and ultraviolet-visible (UV-Vis) spectroscopy, residual gas analysis (RGA), thermal gravimetric analysis (TGA), and mass loss analysis (ML), were used to analyze the irradiated samples. FT-IR spectroscopy revealed that ion irradiation led to the decrease of characteristic band intensities showing the general degradation of the polymers, with scission of side groups and the main backbone. As a consequence of the structural modification, new bands appeared. UV-Vis transmission analysis showed an absorption edge shift from the ultraviolet region towards the visible region indicating double bond and conjugated double bond formation. On-line massspectrometric residual gas analysis showed the release of small gaseous fragment molecules. TGA analysis gave evidence of a changed thermal stability. With ML analysis, the considerable mass loss was quantified. The results of the five complementary analytical methods show how heavy ion irradiation changes the molecular structure of the polymers. Molecular degradation mechanisms are postulated. The amount of radiation damage is found to be sensitive to the used type of ionic

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

International Nuclear Information System (INIS)

Hlatshwayo, T T; Kuhudzai, R J; Njoroge, E G; Malherbe, J B; O’Connell, J H; Skuratov, V A; Msimanga, M

2015-01-01

The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2  ×  10 16 cm −2 and 1  ×  10 16 cm −2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3  ×  10 14 cm −2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV nm −1 and 20 keV nm −1 to fluences below 10 14 cm −2 . Therefore, our results suggest a fluence threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation. Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation. (paper)

Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO{sub 2} layers

Energy Technology Data Exchange (ETDEWEB)

Kachurin, G.A., E-mail: kachurin@isp.nsc.ru [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Cherkova, S.G. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Marin, D.V. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation); Kesler, V.G. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Volodin, V.A. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation); Skuratov, V.A. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)

2012-07-01

Three hundred and twenty nanometer-thick SiO{sub 2} layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 10{sup 12} cm{sup -2} and 10{sup 14} cm{sup -2}, or with 700 MeV Bi ions in the fluence range of 3 Multiplication-Sign 10{sup 12}-1 Multiplication-Sign 10{sup 13} cm{sup -2}. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm{sup -1}, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO{sub 2}. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and {approx}10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

Swift heavy ion irradiation induced modification of structure and ...

Indian Academy of Sciences (India)

1Department of Physics, Salipur College, Salipur 754 103, India. 2Department of ... Ion irradiation; nanoparticles; atomic force microscopy; BiFeO3. 1. Introduction .... and to understand their possible origin, a study on power spectral density ...

High fluence swift heavy ion structure modification of the SiO{sub 2}/Si interface and gate insulator in 65 nm MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Ma, Yao [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gao, Bo, E-mail: gaobo@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Willis, Maureen [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); Guan, Mingyue [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

2017-04-01

In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO{sub 2}/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO{sub 2} and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

Genetic effects of heavy ion irradiation in maize and soybean

International Nuclear Information System (INIS)

Yatou, Osamu; Amano, Etsuo; Takahashi, Tan.

1992-01-01

Somatic mutation on leaves of maize and soybean were observed to investigate genetic effects of heavy ion irradiation. Maize seeds were irradiated with N, Fe and U ions and soybean seeds were irradiated with N ions. This is a preliminary report of the experiment, 1) to examine the mutagenic effects of the heavy ion irradiation, and 2) to evaluate the genetic effects of cosmic ray exposure in a space ship outside the earth. (author)

Precise measurements of energy loss straggling for swift heavy ions in polymers

Energy Technology Data Exchange (ETDEWEB)

Rani, Bindu [Department of Physics, Kurukshetra University, Kurukshetra 136 119 (India); Neetu [Department of Physics, S.D College, Panipat 132103 (India); Sharma, Kalpana [Department of Physics, CMR Institute of Technology, Bangalore 560037 (India); Diwan, P.K. [Department of Applied Sciences, UIET, Kurukshetra University, Kurukshetra 136 119 (India); Kumar, Shyam, E-mail: profshyam@gmail.com [Department of Physics, Kurukshetra University, Kurukshetra 136 119 (India)

2016-11-15

The energy loss straggling measurements for heavy ions with Z = 3–22 (∼0.2–2.5 MeV/u) in PEN (C{sub 7}H{sub 5}O{sub 2}) and PET (C{sub 10}H{sub 8}O{sub 4}) polymers have been carried out utilizing the swift heavy ion beam facility from 15UD Pelletron accelerator at Inter University Accelerator Centre (IUAC), New Delhi, India. The recorded spectra are analyzed in such a way that the Straggling associated with energy loss process could be measured in a systematic manner at any selected value of energy, in terms of per unit thickness of the absorber, at any desired energy intervals. The measured values have been compared with the calculated values obtained from the most commonly used Bethe-Livingston formulations applicable for collisional straggling. The results are tried to be understood in terms of the effective charge on the impinging ion within the absorber. Some interesting trends are observed.

Precise measurements of energy loss straggling for swift heavy ions in polymers

Science.gov (United States)

Rani, Bindu; Neetu; Sharma, Kalpana; Diwan, P. K.; Kumar, Shyam

2016-11-01

The energy loss straggling measurements for heavy ions with Z = 3-22 (∼0.2-2.5 MeV/u) in PEN (C7H5O2) and PET (C10H8O4) polymers have been carried out utilizing the swift heavy ion beam facility from 15UD Pelletron accelerator at Inter University Accelerator Centre (IUAC), New Delhi, India. The recorded spectra are analyzed in such a way that the Straggling associated with energy loss process could be measured in a systematic manner at any selected value of energy, in terms of per unit thickness of the absorber, at any desired energy intervals. The measured values have been compared with the calculated values obtained from the most commonly used Bethe-Livingston formulations applicable for collisional straggling. The results are tried to be understood in terms of the effective charge on the impinging ion within the absorber. Some interesting trends are observed.

Structure and mechanical properties of swift heavy ion irradiated tungsten-bearing delta-phase oxides Y{sub 6}W{sub 1}O{sub 12} and Yb{sub 6}W{sub 1}O{sub 12}

Energy Technology Data Exchange (ETDEWEB)

Tang, M., E-mail: mtang@lanl.gov [Materials Science and Technology Division, Mail-Stop G755, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Wynn, T.A. [Materials Physics and Application Division, Mail-Stop K771, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Patel, M.K.; Won, J. [Materials Science and Technology Division, Mail-Stop G755, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Monnet, I. [CIMAP, CEA-CNRS-ENSICAEN-Universite de Caen Normandie, Bd Henri Becquerel, BP 5133, F-14070, Caen Cedex 5 (France); Pivin, J.C. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, CNRS-IN2P3-Universite Paris Sud, UMR 8609, Bat. 108, 91405 Orsay (France); Mara, N.A. [Materials Physics and Application Division, Mail-Stop K771, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Sickafus, K.E. [Materials Science and Technology Division, Mail-Stop G755, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

2012-06-15

We report on the relationship between structure and mechanical properties of complex oxides whose structures are derivatives of fluorite, following irradiation with swift heavy ion (92 MeV Xe) which approximately simulates fission product irradiation, where the electronic energy loss dominates. The two compounds of interest in this paper are Y{sub 6}W{sub 1}O{sub 12} and Yb{sub 6}W{sub 1}O{sub 12}. These compounds possess an ordered, fluorite derivative crystal structure known as the delta ({delta}) phase, a rhombohedral structure belonging to space group R3{sup Macron}. Structural changes induced by irradiation were examined using X-ray diffraction (XRD) and transmission electron microscopy (TEM). XRD investigations indicated an irradiation-induced amorphization in these compounds. This result is consistent with our previous study on Y{sub 6}W{sub 1}O{sub 12} under displacive radiation environment in which the nuclear energy loss is dominant. High resolution TEM also revealed that individual ion tracks was amorphized. The mechanical properties of both irradiated compounds, were determined by cross-sectional nano-indentation measurements as a function of ion penetration depth. The decreases in Young's modulus, E, and hardness, H (both by about 40% at the irradiated surface) suggest amorphization beyond simple defect accumulation occurs under this irradiation condition.

Radiation damage produced by swift heavy ions in rare earth phosphates

International Nuclear Information System (INIS)

Romanenko, Anton

2017-01-01

This work is devoted to the study of radiation damage produced by swift heavy ions in rare earth phosphates, materials that are considered as perspective for radioactive waste storage. Single crystals of rare earth phosphates were exposed to 2.1 GeV gold (Au) and 1.5 GeV xenon (Xe) ions of and analyzed mainly by Raman spectroscopy. All phosphates were found almost completely amorphous after the irradiation by 2.1 GeV Au ions at a fluence of 1 x 10 13 ions/cm 2 . Radiation-induced changes in the Raman spectra include the intensity decrease of all Raman bands accompanied by the appearance of broad humps and a reduction of the pronounced luminescence present in virgin samples. Analyzing the Raman peak intensities as a function of irradiation fluence allowed the calculation of the track radii for 2.1 GeV Au ions in several rare earth phosphates, which appear to be about 5.0 nm for all studied samples. Series of samples were studied to search for a trend of the track radius depending on the rare earth element (REE) cation. Among the monoclinic phosphates both Raman and small-angle X-ray scattering (SAXS) suggest no significant change of the track radius with increasing REE mass. In contrast, within the tetragonal phosphates Raman spectroscopy data suggests a possible slight decreasing trend of the track radius with the increase of REE atomic number. That finding, however, requires further investigation due to the low reliability of the qualitative Raman analysis. Detailed analysis of Raman spectra in HoPO 4 showed the increase of peak width at the initial stage of the irradiation and subsequent decrease to a steady value at higher fluences. This observation suggested the existence of a defect halo around the amorphous tracks in HoPO 4 . Raman peaks were found to initially shift to lower wavenumbers with reversing this trend at the fluence of 5 x 10 11 for NdPO 4 and 1 x 10 12 ions/cm 2 for HoPO 4 . At the next fluence steps peaks moved in the other direction, passed

In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation

Science.gov (United States)

Kumar, Ashish; Singh, R.; Kumar, Parmod; Singh, Udai B.; Asokan, K.; Karaseov, Platon A.; Titov, Andrei I.; Kanjilal, D.

2018-04-01

A systematic investigation of radiation hardness of Schottky barrier diodes and GaN epitaxial layers is carried out by employing in-situ electrical resistivity and cross sectional transmission electron microscopy (XTEM) microstructure measurements. The change in the current transport mechanism of Au/n-GaN Schottky barrier diodes due to irradiation is reported. The role of irradiation temperature and ion type was also investigated. Creation of damage is studied in low and medium electron energy loss regimes by selecting different ions, Ag (200 MeV) and O (100 MeV) at various fluences at two irradiation temperatures (80 K and 300 K). GaN resistivity increases up to 6 orders of magnitude under heavy Ag ions. Light O ion irradiation has a much lower influence on sheet resistance. The presence of isolated defect clusters in irradiated GaN epilayers is evident in XTEM investigation which is explained on the basis of the thermal spike model.

Progress and tendency in heavy ion irradiation mutation breeding

International Nuclear Information System (INIS)

Zhou Libin; Li Wenjian; Qu Ying; Li Ping

2008-01-01

In recent years, the intermediate energy heavy ion biology has been concerned rarely comparing to that of the low-energy ions. In this paper, we summarized the advantage of a new mutation breeding method mediated by intermediate energy heavy ion irradiations. Meanwhile, the present state of this mutation technique in applications of the breeding in grain crops, cash crops and model plants were introduced. And the preview of the heavy ion irradiations in gene-transfer, molecular marker assisted selection and spaceflight mutation breeding operations were also presented. (authors)

Characteristic effects of heavy ion irradiation on the rat brain

International Nuclear Information System (INIS)

Sun, X.Z.; Takahashi, S.; Kubota, Y.; Yoshida, S.; Takeda, H.; Zhang, R.; Fukui, Y.

2005-01-01

Heavy ion irradiation has the feature to administer a large radiation dose in the vicinity of the endpoint in the beam range, and its irradiation system and biophysical characteristics are different from ordinary irradiation instruments like X- or gamma-rays. Using this special feature, heavy ion irradiation has been applied for cancer treatment. The safety and efficacy of heavy ion irradiator have been demonstrated to a great extent. For instance, brain tumors treated by heavy-ion beams became smaller or disappearance. However, fundamental research related to such clinical phenotypes and their underlying mechanisms are little known. In order to clarify characteristic effects of heavy ion irradiation on the brain, we developed an experimental system for irradiating a restricted region of the rat brain using heavy ion beams. The characteristics of the heavy ion beams, histological, behavioral and elemental changes were studied in the rat following heavy ion irradiation. Adult male Sprague-Dawley rats, aged 12 weeks and weighing 260-340 g (Shizuoka Laboratory Animal Center, Hamamatsu, Japan) were used. Rats were deeply anesthetized 10-15 minutes before irradiation with ketamine (40 mg/kg) and xylazine (10 mg/kg), immobilized in a specifically designed jig, and irradiated with 290 MeV/nucleon charged carbon beams in a dorsal-to ventral direction, The left cerebral hemispheres of the brain were irradiated at doses of 100 Gy charged carbon particles. The depth-dose distribution of the heavy ion beams was modified to make a spread-out bragg peak of 5 mm wide with a range modulator. The characteristics of the heavy-ion beams (field and depth of the heavy-ion beams) were examined by a measuring paraffin section of rat brain at different thickness. That extensive necrosis was observed between 2.5 mm and 7.5 mm depth from the surface of the rat head, suggesting a relatively high dose and uniform dose was delivered among designed depths and the spread-out bragg peak used here

Opto-chemical response of Makrofol-KG to swift heavy ion irradiation

Indian Academy of Sciences (India)

transform infrared spectroscopy; atomic force spectroscopy. PACS Nos ... [8–10], electron beam [11], neutrons [12] and heavy ions [13]. The present .... Makrofol detector with proton and Xe ions, respectively and reported that at higher doses.

Microstructural response of InGaN to swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Zhang, L.M., E-mail: zhanglm@lzu.edu.cn [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Jiang, W. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Fadanelli, R.C. [Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre 91500 (Brazil); Ai, W.S.; Peng, J.X.; Wang, T.S. [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Zhang, C.H. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2016-12-01

A monocrystalline In{sub 0.18}Ga{sub 0.82}N film of ∼275 nm in thickness grown on a GaN/Al{sub 2}O{sub 3} substrate was irradiated with 290 MeV {sup 238}U{sup 32+} ions to a fluence of 1.2 × 10{sup 12} cm{sup −2} at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution X-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In{sub 0.18}Ga{sub 0.82}N film and the 3.0 μm thick GaN buffer layer. The mean diameter of the tracks in In{sub 0.18}Ga{sub 0.82}N is ∼9 nm, as determined by HIM examination. Combination of the HIM and RBS/C data suggests that the In{sub 0.18}Ga{sub 0.82}N material in the track is likely to be highly disordered or fully amorphized. The irradiation induced lattice relaxation in In{sub 0.18}Ga{sub 0.82}N and a distribution of d-spacing of the (0 0 0 2) planes in GaN with lattice expansion are observed by HRXRD.

Charge-state related effects in sputtering of LiF by swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

Assmann, W. [Ludwig-Maximilians-Universität München, 85748 Garching (Germany); Ban-d' Etat, B. [Centre de Recherche sur les Ions, les Matériaux et la photonique, CIMAP-GANIL, CEA–CNRS–ENSICAEN–Univ. Caen, 14070 Caen (France); Bender, M. [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Boduch, P. [Centre de Recherche sur les Ions, les Matériaux et la photonique, CIMAP-GANIL, CEA–CNRS–ENSICAEN–Univ. Caen, 14070 Caen (France); Grande, P.L. [Univ. Fed. Rio Grande do Sul, BR-91501970 Porto Alegre, RS (Brazil); Lebius, H.; Lelièvre, D. [Centre de Recherche sur les Ions, les Matériaux et la photonique, CIMAP-GANIL, CEA–CNRS–ENSICAEN–Univ. Caen, 14070 Caen (France); Marmitt, G.G. [Univ. Fed. Rio Grande do Sul, BR-91501970 Porto Alegre, RS (Brazil); Rothard, H. [Centre de Recherche sur les Ions, les Matériaux et la photonique, CIMAP-GANIL, CEA–CNRS–ENSICAEN–Univ. Caen, 14070 Caen (France); Seidl, T.; Severin, D.; Voss, K.-O. [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Toulemonde, M., E-mail: toulemonde@ganil.fr [Centre de Recherche sur les Ions, les Matériaux et la photonique, CIMAP-GANIL, CEA–CNRS–ENSICAEN–Univ. Caen, 14070 Caen (France); Trautmann, C. [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64289 Darmstadt (Germany)

2017-02-01

Sputtering experiments with swift heavy ions in the electronic energy loss regime were performed by using the catcher technique in combination with elastic recoil detection analysis. The angular distribution of particles sputtered from the surface of LiF single crystals is composed of a jet-like peak superimposed on a broad isotropic distribution. By using incident ions of fixed energy but different charges states, the influence of the electronic energy loss on both components is probed. We find indications that isotropic sputtering originates from near-surface layers, whereas the jet component may be affected by contributions from depth up to about 150 nm.

Cumulative approaches to track formation under swift heavy ion (SHI) irradiation: Phenomenological correlation with formation energies of Frenkel pairs

Energy Technology Data Exchange (ETDEWEB)

Crespillo, M.L., E-mail: mcrespil@utk.edu [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain); Department of Materials Science & Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Agulló-López, F., E-mail: fal@uam.es [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain); Zucchiatti, A. [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain)

2017-03-01

Highlights: • Extensive survey formation energies Frenkel pairs and electronic stopping thresholds. • Correlation: track formation thresholds and the energies for Frenkel pair formation. • Formation energies Frenkel pairs discussed in relation to the cumulative mechanisms. • Amorphous track formation mechanisms: defect accumulation models versus melting. • Advantages cumulative models to deal with new hot topics: nuclear-electronic synergy. - Abstract: An extensive survey for the formation energies of Frenkel pairs, as representative candidates for radiation-induced point defects, is presented and discussed in relation to the cumulative mechanisms (CM) of track formation in dielectric materials under swift heavy ion (SHI) irradiation. These mechanisms rely on the generation and accumulation of point defects during irradiation followed by collapse of the lattice once a threshold defect concentration is reached. The physical basis of those approaches has been discussed by Fecht as a defect-assisted transition to an amorphous phase. Although a first quantitative analysis of the CM model was previously performed for LiNbO{sub 3} crystals, we have, here, adopted a broader phenomenological approach. It explores the correlation between track formation thresholds and the energies for Frenkel pair formation for a broad range of materials. It is concluded that the threshold stopping powers can be roughly scaled with the energies required to generate a critical Frenkel pair concentration in the order of a few percent of the total atomic content. Finally, a comparison with the predictions of the thermal spike model is discussed within the analytical Szenes approximation.

Electronic energy loss of the latent track in heavy ion-irradiated polyimide

International Nuclear Information System (INIS)

Sun Youmei; Liu Jie; Zhang Chonghong; Wang Zhiguang; Jin Yunfan; Duan Jinglai; Song Yin

2005-01-01

In the interaction process of a swift heavy ion (SHI) and polymer, a latent track with radius of several nanometers appears near the ion trajectory due to the dense ionization and excitation. To describe the role of electronic energy loss (dE/dX) e , multi-layer stacks (with different dE/dX) of polyimide (PI) films were irradiated by different SHIs (1.158 GeV Fe 56 and 1.755 GeV Xe 136 ) under vacuum at room temperature. Chemical changes of modified PI films were studied by Fourier Transform Infrared (FTIR) spectroscopy. The main feature of SHI irradiation is the degradation of the functional group and creation of alkyne. The chain disruption rate of PI was investigated in the fluence range from 1 x 10 11 to 6 x 10 12 ions/cm 2 and a wider energy stopping power range (2.2 to 5.2 keV/nm for Fe 56 ions and 8.6 to 11.3 keV/nm for Xe 136 ions). Alkyne formation was observed over the electronic energy loss range of interest. Assuming the saturated track model (the damage process only occur in a cylinder of area σ), the mean degradation and alkyne formation radii in tracks were deduced for Fe and Xe ion irradiation, respectively. The results were validated by the thermal spike model and the threshold electronic energy loss of track formation S et in PI was deduced. The analysis of the irradiated PI films shows that the predictions of the thermal spike model are in qualitative agreement with the curve shape of experimental results. (authors)

Radiation damage produced by swift heavy ions in rare earth phosphates

Energy Technology Data Exchange (ETDEWEB)

Romanenko, Anton

2017-02-13

This work is devoted to the study of radiation damage produced by swift heavy ions in rare earth phosphates, materials that are considered as perspective for radioactive waste storage. Single crystals of rare earth phosphates were exposed to 2.1 GeV gold (Au) and 1.5 GeV xenon (Xe) ions of and analyzed mainly by Raman spectroscopy. All phosphates were found almost completely amorphous after the irradiation by 2.1 GeV Au ions at a fluence of 1 x 10{sup 13} ions/cm{sup 2}. Radiation-induced changes in the Raman spectra include the intensity decrease of all Raman bands accompanied by the appearance of broad humps and a reduction of the pronounced luminescence present in virgin samples. Analyzing the Raman peak intensities as a function of irradiation fluence allowed the calculation of the track radii for 2.1 GeV Au ions in several rare earth phosphates, which appear to be about 5.0 nm for all studied samples. Series of samples were studied to search for a trend of the track radius depending on the rare earth element (REE) cation. Among the monoclinic phosphates both Raman and small-angle X-ray scattering (SAXS) suggest no significant change of the track radius with increasing REE mass. In contrast, within the tetragonal phosphates Raman spectroscopy data suggests a possible slight decreasing trend of the track radius with the increase of REE atomic number. That finding, however, requires further investigation due to the low reliability of the qualitative Raman analysis. Detailed analysis of Raman spectra in HoPO{sub 4} showed the increase of peak width at the initial stage of the irradiation and subsequent decrease to a steady value at higher fluences. This observation suggested the existence of a defect halo around the amorphous tracks in HoPO{sub 4}. Raman peaks were found to initially shift to lower wavenumbers with reversing this trend at the fluence of 5 x 10{sup 11} for NdPO{sub 4} and 1 x 10{sup 12} ions/cm{sup 2} for HoPO{sub 4}. At the next fluence steps

Development of an intermediate energy heavy-ion micro-beam irradiation system

International Nuclear Information System (INIS)

Song Mingtao; Wang Zhiguang; He Yuan; Gao Daqing; Yang Xiaotian; Liu Jie; Su Hong; Man Kaidi; Sheng Li'na

2008-01-01

The micro-beam irradiation system, which focuses the beam down the micron order and precisely delivers a predefined number of ions to a predefined spot of micron order, is a powerful tool for radio-biology, radio-biomedicine and micromachining. The Institute of Modern Physics of Chinese Academy of Sciences is developing a heavy-ion micro-beam irradiation system up to intermediate energy. Based on the intermediate and low energy beam provided by Heavy Ion Research Facility of Lanzhou, the micro-beam system takes the form of the magnetic focusing. The heavy-ion beam is conducted to the basement by a symmetrical achromatic system consisting of two vertical bending magnets and a quadrupole in between. Then a beam spot of micron order is formed by magnetic triplet quadrupole of very high gradient. The sample can be irradiated either in vacuum or in the air. This system will be the first opening platform capable of providing heavy ion micro-beam, ranging from low (10 MeV/u) to intermediate energy (100 MeV/u), for irradiation experiment with positioning and counting accuracy. Target material may be biology cell, tissue or other non-biological materials. It will be a help for unveiling the essence of heavy-ion interaction with matter and also a new means for exploring the application of heavy-ion irradiation. (authors)

Ultrafast laser and swift heavy ion irradiation: Response of Gd{sub 2}O{sub 3} and ZrO{sub 2} to intense electronic excitation

Energy Technology Data Exchange (ETDEWEB)

Rittman, Dylan R. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Geological Sciences, Stanford University, Stanford, California 94305 (United States); Tracy, Cameron L.; Cusick, Alex B.; Abere, Michael J.; Yalisove, Steven M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Torralva, Ben [Department of Atmospheric, Oceanic and Space Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ewing, Rodney C. [Department of Geological Sciences, Stanford University, Stanford, California 94305 (United States)

2015-04-27

In order to investigate the response of materials to extreme conditions, there are several approaches to depositing extremely high concentrations of energy into very small volumes of material, including ultrafast laser and swift heavy ion (SHI) irradiation. In this study, crystalline-to-crystalline phase transformations in cubic Gd{sub 2}O{sub 3} and monoclinic ZrO{sub 2} have been investigated using ultrafast laser irradiation. The phases produced by the extreme conditions of irradiation were characterized by grazing incidence x-ray diffraction (GIXRD) and Raman spectroscopy. Gd{sub 2}O{sub 3} exhibited a cubic-to-monoclinic phase transformation, as evidenced by the appearance of the monoclinic (402{sup ¯}), (003), (310), and (112{sup ¯}) peaks in the GIXRD pattern and of four A{sub g} and three B{sub g} Raman modes. ZrO{sub 2} underwent a monoclinic-to-tetragonal phase transformation, as evidenced by the emergence of the tetragonal (101) peak in the GIXRD pattern and of E{sub g} and A{sub 1g} Raman modes. The new phases formed by ultrafast laser irradiation are high temperature polymorphs of the two materials. No evidence of amorphization was seen in the GIXRD data, though Raman spectroscopy indicated point defect accumulation. These results are identical to those produced by irradiation with SHIs, which also deposit energy in materials primarily through electronic excitation. The similarity in damage process and material response between ultrafast laser and SHI irradiation suggests a fundamental relationship between these two techniques.

Evaluation of cell behavior on modified polypropylene with swift heavy ion irradiation

International Nuclear Information System (INIS)

Arbeitman, Claudia R.; Ibañez, Irene L.; García Bermúdez, Gerardo; Durán, Hebe; Grosso, Mariela F. del; Salguero, Noelia; Mazzei, Rubén

2012-01-01

Ion beam irradiation is a well known means to change the physico-chemical properties of polymers, and induced bio and citocompatibility in controlled conditions and in selected areas of surface. However, the enhancement of cell adhesion on a modified substrate does not mean that the surface is adequate for functional cells. The purpose of the present work is to study proliferation, changes in cytoskeleton and cell morphology on substrates as a function of irradiation parameters. We irradiated polypropylene with sulfur (S) ion-beam at energies of 110 MeV with fluences between 1 × 10 6 and 2 × 10 10 ions cm −2 . NIH 3T3 cells were cultured on each sample. Cell morphology was observed using phase contrast microscopy and cytoskeleton proteins with fluorescence microscopy. The analysis show different cellular responses as a functions of irradiation parameter, strongly suggests that different underlying substratum can result in distinct types of cytoskeleton reorganization.

Evaluation of cell behavior on modified polypropylene with swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Arbeitman, Claudia R., E-mail: arbeitman@tandar.cnea.gov.ar [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Ibanez, Irene L. [CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Garcia Bermudez, Gerardo [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Duran, Hebe [CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Gerencia de Desarrollo Tecnologico y Proyectos Especiales, TANDAR-CNEA (Argentina); Grosso, Mariela F. del [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Salguero, Noelia [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); Mazzei, Ruben [U.A. Tecnologicas y Agropecuarias, CNEA (Argentina)

2012-02-15

Ion beam irradiation is a well known means to change the physico-chemical properties of polymers, and induced bio and citocompatibility in controlled conditions and in selected areas of surface. However, the enhancement of cell adhesion on a modified substrate does not mean that the surface is adequate for functional cells. The purpose of the present work is to study proliferation, changes in cytoskeleton and cell morphology on substrates as a function of irradiation parameters. We irradiated polypropylene with sulfur (S) ion-beam at energies of 110 MeV with fluences between 1 Multiplication-Sign 10{sup 6} and 2 Multiplication-Sign 10{sup 10} ions cm{sup -2}. NIH 3T3 cells were cultured on each sample. Cell morphology was observed using phase contrast microscopy and cytoskeleton proteins with fluorescence microscopy. The analysis show different cellular responses as a functions of irradiation parameter, strongly suggests that different underlying substratum can result in distinct types of cytoskeleton reorganization.

Anti-biofilm activity of Fe heavy ion irradiated polycarbonate

Energy Technology Data Exchange (ETDEWEB)

Joshi, R.P. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Hareesh, K., E-mail: appi.2907@gmail.com [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Bankar, A. [Department of Microbiology, Waghire College, Pune 412301 (India); Sanjeev, Ganesh [Microtron Centre, Department of Studies in Physics, Mangalore University, Mangalore 574166 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Centre, Arun Asaf Ali Marg, New Delhi 110067 (India); Dahiwale, S.S.; Bhoraskar, V.N. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-10-01

Highlights: • PC films were irradiated by 60 and 120 MeV Fe ions. • Irradiated PC films showed changes in its physical and chemical properties. • Irradiated PC also showed more anti-biofilm activity compared to pristine PC. - Abstract: Polycarbonate (PC) polymers were investigated before and after high energy heavy ion irradiation for anti-bacterial properties. These PC films were irradiated by Fe heavy ions with two energies, viz, 60 and 120 MeV, at different fluences in the range from 1 × 10{sup 11} ions/cm{sup 2} to 1 × 10{sup 13} ions/cm{sup 2}. UV-Visible spectroscopic results showed optical band gap decreased with increase in ion fluences due to chain scission mainly at carbonyl group of PC which is also corroborated by Fourier transform infrared spectroscopic results. X-ray diffractogram results showed decrease in crystallinity of PC after irradiation which leads to decrease in molecular weight. This is confirmed by rheological studies and also by differential scanning calorimetric results. The irradiated PC samples showed modification in their surfaces prevents biofilm formation of human pathogen, Salmonella typhi.

Study of the modifications induced in AlxGa1-xN semiconductors under swift heavy ion irradiation

International Nuclear Information System (INIS)

Moisy, Florent

2016-01-01

Nitride semiconductors are attractive materials for optoelectronic applications. They can be subjected to heavy ions in a wide range of energy during their elaboration (improvement of their properties by ionic implantation) or during their potential use in extreme environments (outer space). This thesis focuses on the study of AlxGa1-xN alloys under heavy ion irradiation from GANIL. In GaN, the formation of Ga vacancies has been highlighted, these latter coming from elastic collisions between atoms in the material and the projectiles. On the other hand, it is possible to observe the formation of disordered ion tracks for projectiles with high electronic stopping power (Se). These tracks induce strong surface modifications, a closing of the optical bandgap, but also an extension strain along the direction parallel to the ion direction and biaxial stresses of some GPa. Concerning AlxGa1-xN alloys with x from 0.3 to 1, the points defects are more complex, and a synergy between electronic excitations and nuclear collisions is responsible of their formation. Nevertheless, the increase of the Al molar fraction (x), tends to improve the resistance to ion tracks formation in these materials. (author) [fr

Thermal defect annealing of swift heavy ion irradiated ThO2

Science.gov (United States)

Palomares, Raul I.; Tracy, Cameron L.; Neuefeind, Joerg; Ewing, Rodney C.; Trautmann, Christina; Lang, Maik

2017-08-01

Isochronal annealing, neutron total scattering, and Raman spectroscopy were used to characterize the structural recovery of polycrystalline ThO2 irradiated with 2-GeV Au ions to a fluence of 1 × 1013 ions/cm2. Neutron diffraction patterns show that the Bragg signal-to-noise ratio increases and the unit cell parameter decreases as a function of isochronal annealing temperature, with the latter reaching its pre-irradiation value by 750 °C. Diffuse neutron scattering and Raman spectroscopy measurements indicate that an isochronal annealing event occurs between 275-425 °C. This feature is attributed to the annihilation of oxygen point defects and small oxygen defect clusters.

Heavy ion irradiation effects of polymer film on absorption of light

Energy Technology Data Exchange (ETDEWEB)

Kasai, Noboru; Seguchi, Tadao [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Arakawa, Tetsuhito

1997-03-01

Ion irradiation effects on the absorption of light for three types of polymer films; polyethylene-terephthalate (PET), polyethylene-naphthalate (PEN), and polyether-ether-ketone (PEEK) were investigated by irradiation of heavy ions with Ni{sup 4+}(15MeV), O{sup 6+}(160MeV), and Ar{sup 8+}(175MeV), and compared with electron beams(EB) irradiation. The change of absorption at 400nm by a photometer was almost proportional to total dose for ions and EB. The absorption per absorbed dose was much high in Ni{sup 4+}, but rather small in O{sup 6+} and Ar{sup 8+} irradiation, and the absorption by EB irradiation was accelerated by the temperature of polymer film during irradiation. The beam heating of materials during ion irradiation was assumed, especially for Ni ion irradiation. The heavy ion irradiation effect of polymers was thought to be much affected by the ion beam heating than the linear energy transfer(LET) of radiation source. (author)

Activation of accelerator construction materials by heavy ions

Energy Technology Data Exchange (ETDEWEB)

Katrík, P., E-mail: p.katrik@gsi.de [GSI Darmstadt, Planckstrasse 1, D-64291 (Germany); Mustafin, E. [GSI Darmstadt, Planckstrasse 1, D-64291 (Germany); Hoffmann, D.H.H. [TU Darmstadt, Schlossgartenstraße 9, D-64289 (Germany); Pavlovič, M. [FEI STU Bratislava, Ilkovičova 3, SK-81219 (Slovakia); Strašík, I. [GSI Darmstadt, Planckstrasse 1, D-64291 (Germany)

2015-12-15

Activation data for an aluminum target irradiated by 200 MeV/u {sup 238}U ion beam are presented in the paper. The target was irradiated in the stacked-foil geometry and analyzed using gamma-ray spectroscopy. The purpose of the experiment was to study the role of primary particles, projectile fragments, and target fragments in the activation process using the depth profiling of residual activity. The study brought information on which particles contribute dominantly to the target activation. The experimental data were compared with the Monte Carlo simulations by the FLUKA 2011.2c.0 code. This study is a part of a research program devoted to activation of accelerator construction materials by high-energy (⩾200 MeV/u) heavy ions at GSI Darmstadt. The experimental data are needed to validate the computer codes used for simulation of interaction of swift heavy ions with matter.

Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations; Elaboration par implantation ionique de nanoparticules de cobalt dans la silice et modifications de leurs proprietes sous irradiation d'electrons et d'ions de haute energie

Energy Technology Data Exchange (ETDEWEB)

D' Orleans, C

2003-07-15

This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co{sup +} ions have been implanted at 160 keV at fluences of 2.10{sup 16}, 5.10{sup 16} and 10{sup 17} at/cm{sup 2}, and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10{sup 16} Co{sup +}/cm{sup 2} at 77 K, to 9.7 nm at 10{sup 17} Co{sup +}/cm{sup 2} at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

Energy Technology Data Exchange (ETDEWEB)

Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Su, Ping, E-mail: pingsu@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei; Ma, Yao [Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min, E-mail: mgong@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

2016-12-01

Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E{sub C}-0.31 eV and E{sub C}-0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

International Nuclear Information System (INIS)

Li, Yun; Su, Ping; Yang, Zhimei; Ma, Yao; Gong, Min

2016-01-01

Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E C -0.31 eV and E C -0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

Lattice damage assessment and optical waveguide properties in LaAlO3 single crystal irradiated with swift Si ions

Science.gov (United States)

Liu, Y.; Crespillo, M. L.; Huang, Q.; Wang, T. J.; Liu, P.; Wang, X. L.

2017-02-01

As one of the representative ABO3 perovskite-structured oxides, lanthanum aluminate (LaAlO3) crystal has emerged as one of the most valuable functional-materials, and has attracted plenty of fundamental research and promising applications in recent years. Electronic, magnetic, optical and other properties of LaAlO3 strongly depend on its crystal structure, which could be strongly modified owing to the nuclear or electronic energy loss deposited in an ion irradiation environment and, therefore, significantly affecting the performance of LaAlO3-based devices. In this work, utilizing swift (tens of MeV) Si-ion irradiation, the damage behavior of LaAlO3 crystal induced by nuclear or electronic energy loss has been studied in detail utilizing complementary characterization techniques. Differing from other perovskite-structured crystals in which the electronic energy loss could lead to the formation of an amorphous region based on the thermal spike mechanism, in this case, intense electronic energy loss in LaAlO3 will not induce any obvious structural damage. The effects of ion irradiation on the mechanical properties, including hardness increase and elastic modulus decrease, have been confirmed. On the other hand, considering the potential applications of LaAlO3 in the field of integrated optoelectronics, the optical-waveguide properties of the irradiation region have been studied. The significant correspondence (symmetrical inversion) between the iWKB-reconstructed refractive-index profile and SRIM-simulated dpa profile further proves the effects (irradiation-damage production and refractive-index decrease) of nuclear energy loss during the swift-ion penetration process in LaAlO3 crystal. In the case of the rather-thick damage layer produced by swift-ion irradiation, obtaining a damage profile will be constrained owing to the analysis-depth limitation of the characterization techniques (RBS/channeling), and our analysis process (optical guided-mode measurement and

Swift heavy ion induced de wetting of metal oxide thin films on silicon

International Nuclear Information System (INIS)

Bolse, T.; Paulus, H.; Bolse, W.

2006-01-01

We have observed that thin oxide coatings (NiO, Fe 2 O 3 ) tend to dewet their Si substrate when being bombarded with swift heavy ions (350-600 MeV Au ions) even though the irradiation was carried out about 80 K and hence, the films never reached their melting point. Scanning electron and atomic force microscopy reveal a surprising similarity of the dewetting morphologies with those observed for molten polymer films on Si, which have recently been reported by others [S. Herminghaus, K. Jakobs, K. Mecke, J. Bischof, A. Fery, M. Ibn-Elhaj, S. Schlagowsky, Science 282 (1998) 916; R. Seemann, S. Herminghaus, K. Jacobs, J. Phys.: Condens. Matter 13 (2001) 4925]. Like in that cases also here heterogeneous and homogeneous hole nucleation could be identified. Heterogeneous nucleation is less pronounced in Fe 2 O 3 /Si than in NiO/Si. The occurrence of spinodal-like dewetting cannot be detected unambiguously. The dewetting kinetics were determined by means of Rutherford backscattering spectroscopy and found to slightly differ for the two compounds. The dewetting kinetics as well as the final dewetting pattern strongly depend on the initial film thicknesses. No dewetting occurs for film thicknesses above about 150 nm, while for very small thicknesses below about 40 nm the film decays into nm-sized spherical droplets. At intermediate film thicknesses percolated networks of small oxide bridges are formed

Physico-chemical characterization of polyethylene of ultra high molecular weight modified with gamma irradiation and heavy ions

International Nuclear Information System (INIS)

Lagarde, M; Del Grosso, M; Fasce, D; Dommarco, R; Laino, S; Fasce, L.A

2012-01-01

The ultra high molecular weight polyethylene (UHMWPE) is a biomaterial widely used in total joint replacement. In this work, the effect of two different irradiation techniques on UHMWPE is analyzed. One technique involves gamma irradiation (γ) followed by a thermal treatment, thus modifying the material bulk. The other implies swift heavy ion irradiation (SHI), which have an effect only on the near surface layers. The surface nanomechanical properties are evaluated from depth sensing indentation experiments, while changes in crystallinity and chemical structure are determined by DSC and Raman spectroscopy. The results show that even when both techniques are able to improve the UHMWPE wear behavior, the effect on other mechanical properties and molecular structure modification is different. The γ irradiated sample exhibits lower crystallinity, hardness and modulus than the pristine UHMWPE, while the SHI irradiated sample exhibits higher crystallinity and enhanced mechanical properties than the later

Melting of Au and Al in nanometer Fe/Au and Fe/Al multilayers under swift heavy ions: A thermal spike study

International Nuclear Information System (INIS)

Chettah, A.; Wang, Z.G.; Kac, M.; Kucal, H.; Meftah, A.; Toulemonde, M.

2006-01-01

Knowing that Fe is sensitive to swift heavy ion irradiations whereas Au and Al are not, the behavior of nanometric metallic multilayer systems, like [Fe(3 nm)/Au(x)] y and [Fe(3 nm)/Al(x)] y with x ranging between 1 and 10 nm, were studied within the inelastic thermal spike model. In addition to the usual cylindrical geometry of energy dissipation perpendicular to the ion projectile direction, the heat transport along the ion path was implemented in the electronic and atomic sub-systems. The simulations were performed using three different values of linear energy transfer corresponding to 3 MeV/u of 208 Pb, 132 Xe and 84 Kr ions. For the Fe/Au system, evidence of appearance of a molten phase was found in the entire Au layer, provided the Au thickness is less than 7 nm and 3 nm for Pb and Xe ions, respectively. For the Fe/Al(x) system irradiated with Pb ions, the Al layers with a thickness less than 4 nm melt along the entire ion track. Surprisingly, the Fe layer does not melt if the Al thickness is larger than 2 nm, although the deposited energy surpasses the electronic stopping power threshold of track formation in Fe. For Kr ions melting does not occur in any of the multilayer systems

Heavy ion irradiation of astrophysical ice analogs

International Nuclear Information System (INIS)

Duarte, Eduardo Seperuelo; Domaracka, Alicja; Boduch, Philippe; Rothard, Hermann; Balanzat, Emmanuel; Dartois, Emmanuel; Pilling, Sergio; Farenzena, Lucio; Frota da Silveira, Enio

2009-01-01

Icy grain mantles consist of small molecules containing hydrogen, carbon, oxygen and nitrogen atoms (e.g. H 2 O, GO, CO 2 , NH 3 ). Such ices, present in different astrophysical environments (giant planets satellites, comets, dense clouds, and protoplanetary disks), are subjected to irradiation of different energetic particles: UV radiation, ion bombardment (solar and stellar wind as well as galactic cosmic rays), and secondary electrons due to cosmic ray ionization of H 2 . The interaction of these particles with astrophysical ice analogs has been the object of research over the last decades. However, there is a lack of information on the effects induced by the heavy ion component of cosmic rays in the electronic energy loss regime. The aim of the present work is to simulate of the astrophysical environment where ice mantles are exposed to the heavy ion cosmic ray irradiation. Sample ice films at 13 K were irradiated by nickel ions with energies in the 1-10 MeV/u range and analyzed by means of FTIR spectrometry. Nickel ions were used because their energy deposition is similar to that deposited by iron ions, which are particularly abundant cosmic rays amongst the heaviest ones. In this work the effects caused by nickel ions on condensed gases are studied (destruction and production of molecules as well as associated cross sections, sputtering yields) and compared with respective values for light ions and UV photons. (authors)

Optical waveguides in LiTaO3 crystals fabricated by swift C5+ ion irradiation

International Nuclear Information System (INIS)

Liu, Guiyuan; He, Ruiyun; Akhmadaliev, Shavkat; Vázquez de Aldana, Javier R.; Zhou, Shengqiang; Chen, Feng

2014-01-01

We report on the optical waveguides, in both planar and ridge configurations, fabricated in LiTaO 3 crystal by using carbon (C 5+ ) ions irradiation at energy of 15 MeV. The planar waveguide was produced by direct irradiation of swift C 5+ ions, whilst the ridge waveguides were manufactured by using femtosecond laser ablation of the planar layer. The reconstructed refractive index profile of the planar waveguide has showed a barrier-shaped distribution, and the near-field waveguide mode intensity distribution was in good agreement with the calculated modal profile. After thermal annealing at 260 °C in air, the propagation losses of both the planar and ridge waveguides were reduced to 10 dB/cm

Coupled chemical reactions in dynamic nanometric confinement: VII. Biosensors based on swift heavy ion tracks with membranes

Czech Academy of Sciences Publication Activity Database

Fink, Dietmar; Munoz, G. H.; García Arellano, H.; Alfonta, L.; Vacík, Jiří; Kiv, A.; Hnatowicz, Vladimír

2017-01-01

Roč. 172, 1-2 (2017), s. 159-173 ISSN 1042-0150 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : biotechnology * tracks * swift heavy ions * polymers * etching Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nano-materials (production and properties) Impact factor: 0.443, year: 2016

Microstructure and phase transformations in the ODS alloys irradiated by swift heavy ions

International Nuclear Information System (INIS)

Zlotski, S.V.; Anishchik, V.M; Skuratov, V.A.; O’Connell, J.; Neethling, J.H.

2015-01-01

Microstructure of KP4 ODS alloy irradiated with 700 MeV bismuth ions at 300 K has been studied using high resolution transmission electron microscopy. No latent tracks have been observed in Y 4 Al 2 O 9 particles in KP4 irradiated with Bi ions. Small oxides (~ 5 nm) in KP4 alloy remain crystalline at Bi ion fluence 1.5*10 13 cm -2 , while subsurface regions in large (~ 20 nm) particles faced to the beam entrance became amorphous. (authors)

Ultrafast laser and swift heavy ion irradiation: Response of Gd ₂ O ₃ and ZrO ₂ to intense electronic excitation

Energy Technology Data Exchange (ETDEWEB)

Rittman, Dylan R.; Tracy, Cameron L.; Cusick, Alex B.; Abere, Michael J.; Torralva, Ben; Ewing, Rodney C.; Yalisove, Steven M.

2015-04-27

In order to investigate the response of materials to extreme conditions, there are several approaches to depositing extremely high concentrations of energy into very small volumes of material, including ultrafast laser and swift heavy ion (SHI) irradiation. In this study, crystalline-to-crystalline phase transformations in cubic Gd2O3 and monoclinic ZrO2 have been investigated using ultrafast laser irradiation. The phases produced by the extreme conditions of irradiation were characterized by grazing incidence x-ray diffraction (GIXRD) and Raman spectroscopy. Gd2O3 exhibited a cubic-to-monoclinic phase transformation, as evidenced by the appearance of the monoclinic (40$\\bar{2}$), (003), (310), and (112$\\bar{2}$) peaks in the GIXRD pattern and of four Ag and three Bg Raman modes. ZrO2 underwent a monoclinic-to-tetragonal phase transformation, as evidenced by the emergence of the tetragonal (101) peak in the GIXRD pattern and of Eg and A1g Raman modes. The new phases formed by ultrafast laser irradiation are high temperature polymorphs of the two materials. No evidence of amorphization was seen in the GIXRD data, though Raman spectroscopy indicated point defect accumulation. These results are identical to those produced by irradiation with SHIs, which also deposit energy in materials primarily through electronic excitation. The similarity in damage process and material response between ultrafast laser and SHI irradiation suggests a fundamental relationship between these two techniques.

Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations; Elaboration par implantation ionique de nanoparticules de cobalt dans la silice et modifications de leurs proprietes sous irradiation d'electrons et d'ions de haute energie

Energy Technology Data Exchange (ETDEWEB)

D' Orleans, C

2003-07-15

This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co{sup +} ions have been implanted at 160 keV at fluences of 2.10{sup 16}, 5.10{sup 16} and 10{sup 17} at/cm{sup 2}, and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10{sup 16} Co{sup +}/cm{sup 2} at 77 K, to 9.7 nm at 10{sup 17} Co{sup +}/cm{sup 2} at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

Heavy ion irradiation induces autophagy in irradiated C2C12 myoblasts and their bystander cells

International Nuclear Information System (INIS)

Hino, Mizuki; Tajika, Yuki; Hamada, Nobuyuki

2010-01-01

Autophagy is one of the major processes involved in the degradation of intracellular materials. Here, we examined the potential impact of heavy ion irradiation on the induction of autophagy in irradiated C2C12 mouse myoblasts and their non-targeted bystander cells. In irradiated cells, ultrastructural analysis revealed the accumulation of autophagic structures at various stages of autophagy (id est (i.e.) phagophores, autophagosomes and autolysosomes) within 20 min after irradiation. Multivesicular bodies (MVBs) and autolysosomes containing MVBs (amphisomes) were also observed. Heavy ion irradiation increased the staining of microtubule-associated protein 1 light chain 3 and LysoTracker Red (LTR). Such enhanced staining was suppressed by an autophagy inhibitor 3-methyladenine. In addition to irradiated cells, bystander cells were also positive with LTR staining. Altogether, these results suggest that heavy ion irradiation induces autophagy not only in irradiated myoblasts but also in their bystander cells. (author)

Response of Gd 2 Ti 2 O 7 and La 2 Ti 2 O 7 to swift-heavy ion irradiation and annealing

Energy Technology Data Exchange (ETDEWEB)

Park, Sulgiye; Lang, Maik; Tracy, Cameron L.; Zhang, Jiaming; Zhang, Fuxiang; Trautmann, Christina; Rodriguez, Matias D.; Kluth, Patrick; Ewing, Rodney C.

2015-07-01

Swift heavy ion (2 GeV 181Ta) irradiation-induced amorphization and temperature-induced recrystallization of cubic pyrochlore Gd2Ti2O7 (Fd3¯m) are compared with the response of a compositionally-similar material with a monoclinic-layered perovskite-type structure, La2Ti2O7 (P21). The averaged electronic energy loss, dE/dx, was 37 keV/nm and 35 keV/nm in Gd2Ti2O7 and La2Ti2O7, respectively. Systematic analysis of the structural modifications was completed using transmission electron microscopy, synchrotron X-ray diffraction, Raman spectroscopy, and small-angle X-ray scattering. Increasing ion-induced amorphization with increasing ion fluence was evident in the X-ray diffraction patterns of both compositions by a reduction in the intensity of the diffraction maxima concurrent with the growth in intensity of a broad diffuse scattering halo. Transmission electron microscopy analysis showed complete amorphization within ion tracks (diameter: ~10 nm) for the perovskite-type material; whereas a concentric, core–shell morphology was evident in the ion tracks of the pyrochlore, with an outer shell of disordered yet still crystalline material with the fluorite structure surrounding an amorphous track core (diameter: ~9 nm). The radiation response of both titanate oxides with the same stoichiometry can be understood in terms of differences in their structures and compositions. While the radiation damage susceptibility of pyrochlore A2B2O7 materials decreases as a function of the cation radius ratio rA/rB, the current study correlates this behavior with the stability field of monoclinic structures, where rLa/rTi > rGd/rTi. Isochronal annealing experiments of the irradiated materials showed complete recrystallization of La2Ti2O7 at 775 °C and of Gd2Ti2O7 at 850 °C. The annealing behavior is discussed in terms of enhanced damage recovery in La2Ti2O7, compared to the pyrochlore compounds Gd2Ti2O7. The difference in the recrystallization behavior may be related to structural

Electronic sputtering by swift highly charged ions of nitrogen on amorphous carbon

International Nuclear Information System (INIS)

Caron, M.; Haranger, F.; Rothard, H.; Ban d'Etat, B.; Boduch, P.; Clouvas, A.; Potiriadis, C.; Neugebauer, R.; Jalowy, T.

2001-01-01

Electronic sputtering with heavy ions as a function of both electronic energy loss dE/dx and projectile charge state q was studied at the French heavy ion accelerator GANIL. Amorphous carbon (untreated, and sputter-cleaned and subsequently exposed to nitrogen) was irradiated with swift highly charged ions (Z=6-73, q=6-54, energy 6-13 MeV/u) in an ultrahigh vacuum scattering chamber. The fluence dependence of ion-induced electron yields allows to deduce a desorption cross-section σ which varies approximately as σ∼(dE/dx) 1.65 or σ∼q 3.3 for sputter-cleaned amorphous carbon exposed to nitrogen. This q dependence is close to the cubic charge dependence observed for the emission of H + secondary ions which are believed to be emitted from the very surface. However, the power law σ∼(dE/dx) 1.65 , related to the electronic energy loss gives the best empirical description. The dependence on dE/dx is close to a quadratic one thus rather pointing towards a thermal evaporation-like effect

Magnetic and topographical modifications of amorphous Co–Fe thin films induced by high energy Ag{sup 7+} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Pookat, G.; Hysen, T. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Al-Harthi, S.H.; Al-Omari, I.A. [Department of Physics, Sultan Qaboos University, Muscat, P.O. Box 36, Code 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

2013-09-01

We have investigated the effects of swift heavy ion irradiation on thermally evaporated 44 nm thick, amorphous Co{sub 77}Fe{sub 23} thin films on silicon substrates using 100 MeV Ag{sup 7+} ions fluences of 1 × 10{sup 11} ions/cm{sup 2}, 1 × 10{sup 12} ions/cm{sup 2}, 1 × 10{sup 13} ions/cm{sup 2}, and 3 × 10{sup 13} ions/cm{sup 2}. The structural modifications upon swift heavy irradiation were investigated using glancing angle X-ray diffraction. The surface morphological evolution of thin film with irradiation was studied using Atomic Force Microscopy. Power spectral density analysis was used to correlate the roughness variation with structural modifications investigated using X-ray diffraction. Magnetic measurements were carried out using vibrating sample magnetometry and the observed variation in coercivity of the irradiated films is explained on the basis of stress relaxation. Magnetic force microscopy images are subjected to analysis using the scanning probe image processor software. These results are in agreement with the results obtained using vibrating sample magnetometry. The magnetic and structural properties are correlated.

Damage induced by swift heavy ions in a pure metallic target: iron. Experimental results and numerical simulation

International Nuclear Information System (INIS)

Legrand, P.

1993-01-01

The damage induced when a high energy deposition occurs in the electronic system of a pure metal (Ag, Co, Fe, Ni, Pd, Pt, Ti, W, Zr) has been investigated using two methods: low temperature swift heavy ion (O, Ar, Kr, Xe, Pb, u) irradiations and computer simulations by molecular dynamics. Irradiations reveal that up to now, it is only in iron, titanium, cobalt and zirconium targets that high levels of energy deposition in electronic excitations lead to a new mechanism of defect creation in addition to the effects of elastic collisions. This mechanism might be the Coulomb explosion: the incident ion creates in its wake a cylinder of highly ionized matter; Coulomb repulsions of short duration in metallic targets could then set a great number of neighbouring atoms into motion and lead to permanent atomic displacements. Using molecular dynamics, we confirm that atomic displacements can indeed occur when neighbouring perturbated atoms receive even a very small amount of kinetic energy (≤ 1 eV). This happens only if the repulsive movements are collective and coherent. Defect creation and annealing of preexisting defects which occur in iron at different energy deposition levels are successfully simulated. An original empirical N-body potential, allowing a realistic description of the bulk properties of the body centered cubic iron, is used. (author). refs., figs., tabs

Lattice damage assessment and optical waveguide properties in LaAlO3 single crystal irradiated with swift Si ions

International Nuclear Information System (INIS)

Liu, Y; Wang, T J; Liu, P; Wang, X L; Crespillo, M L; Huang, Q

2017-01-01

As one of the representative ABO 3 perovskite-structured oxides, lanthanum aluminate (LaAlO 3 ) crystal has emerged as one of the most valuable functional-materials, and has attracted plenty of fundamental research and promising applications in recent years. Electronic, magnetic, optical and other properties of LaAlO 3 strongly depend on its crystal structure, which could be strongly modified owing to the nuclear or electronic energy loss deposited in an ion irradiation environment and, therefore, significantly affecting the performance of LaAlO 3 -based devices. In this work, utilizing swift (tens of MeV) Si-ion irradiation, the damage behavior of LaAlO 3 crystal induced by nuclear or electronic energy loss has been studied in detail utilizing complementary characterization techniques. Differing from other perovskite-structured crystals in which the electronic energy loss could lead to the formation of an amorphous region based on the thermal spike mechanism, in this case, intense electronic energy loss in LaAlO 3 will not induce any obvious structural damage. The effects of ion irradiation on the mechanical properties, including hardness increase and elastic modulus decrease, have been confirmed. On the other hand, considering the potential applications of LaAlO 3 in the field of integrated optoelectronics, the optical-waveguide properties of the irradiation region have been studied. The significant correspondence (symmetrical inversion) between the iWKB-reconstructed refractive-index profile and SRIM-simulated dpa profile further proves the effects (irradiation-damage production and refractive-index decrease) of nuclear energy loss during the swift-ion penetration process in LaAlO 3 crystal. In the case of the rather-thick damage layer produced by swift-ion irradiation, obtaining a damage profile will be constrained owing to the analysis-depth limitation of the characterization techniques (RBS/channeling), and our analysis process (optical guided

The gaseous emission of polymers under swift heavy ion irradiation: effect of the electronic stopping power; L'emission gazeuse des polymeres aliphatiques sous irradiation: effet du pouvoir d'arret electronique

Energy Technology Data Exchange (ETDEWEB)

Picq, V

2000-07-01

This thesis contributes to a better understanding of the damaging processes, which occur in polymers under swift heavy ion irradiation. The present study is exclusively devoted to the influence of the electronic stopping power, (dE/dx)e, on the molecular emission under irradiation. The irradiated polymers are polyethylene, polypropylene and poly-butene. The (dE/dx)e of the projectiles used varies from 3.5*10{sup -3} MeV.mg{sup -1}.cm{sup 2} (electron) to 39 MeV.mg{sup -1}.cm{sup 2} ({sup 58}Ni). We used two different experimental approaches in order to identify the nature of the emitted gases: mass spectrometry and infrared spectroscopy. The first technique is non selective, therefore, we could detect the emission of H{sub 2} and heavy molecules; it also gives information on the diffusion kinetics of the molecules formed. The use of infrared spectroscopy for this kind of analysis is new and the technique was developed at the laboratory. It enables us to identify, without any ambiguity, molecules with up to three carbon atoms. The experimental spectra are analysed by using reference spectra of pure gases, measured in our laboratory. We have quantified precisely each identified gas, and we have followed the evolution of the radiochemical yields with increasing (dE/dx)e. The results, obtained at different (dE/dx)e, inform us on the different mechanisms of gas molecules formation, for example the side group departure and, at high (dE/dx)e, the fragmentation of the main chain which is due to multiple ionisation of the macromolecule. (author)

Optical waveguides in Nd:GdVO4 crystals fabricated by swift N3+ ion irradiation

Science.gov (United States)

Dong, Ningning; Yao, Yicun; Chen, Feng

2012-12-01

Optical planar waveguides have been manufactured in Nd:GdVO4 crystal by swift N3+ ions irradiation at fluence of 1.5 × 1014 ions/cm2. A typical "barrier"-style refractive index profile was formed and the light can be well confined in the waveguide region. The modal distribution of the guided modes obtained from numerical calculation has a good agreement with the experimental modal distribution. The measured photoluminescence spectra revealed that the fluorescence properties of the Nd3+ ions have been modified to some extent in the waveguide's volume. The propagation loss of the planar waveguide can decrease to lower than 1 dB/cm after adequate annealing.

Preliminary study on mutagenic effects of heavy ions irradiation on maize inbred lines

International Nuclear Information System (INIS)

Yu Lixia; Li Wenjian; Xie Hongmei; Chen Xuejun; Chen Jing

2010-01-01

In order to study mutagenic effects of different heavy ions irradiation on maize inbred lines,corn seeds of Zheng58, Lu9801, Jinxiang4C-1, CSR24001, 308 and 478 were irradiated with 12 C 6+ and 36 Ar 18+ ions. The experimental results showed that the germination rate and planting percent were different after irradiation. The wettish seeds had higher sensibility to heavy ion irradiation. The leaf type of the plant appeared visible changes in M 1 generation. In M 2 generation, great changes had taken place in economic traits, many of which are beneficial mutation. Some beneficia1 mutation could be stably inherited in M 3 generation. From the above, it can be predicted that heavy ions irradiation is an effective means of genetic improvement of maize. (authors)

Investigation of structural materials of reactors using high-energy heavy-ion irradiations

International Nuclear Information System (INIS)

Wang Zhiguang

2007-01-01

Radiation damage in structural materials of fission/fusion reactors is mainly attributed to the evolution of intensive atom displacement damage induced by energetic particles (n, α and/or fission fragments) and high-rate helium doping by direct α particle bombardments and/or (n, α) reactions. It can cause severe degradation of reactor structural materials such as surface blistering, bulk void swelling, deformation, fatigue, embrittlement, stress erosion corrosion and so on that will significantly affect the operation safety of reactors. However, up to now, behavior of structural materials at the end of their service can hardly be fully tested in a real reactor. In the present work, damage process in reactor structural materials is briefly introduced, then the advantages of energetic ion implantation/irradiation especially high-energy heavy ion irradiation are discussed, and several typical examples on simulation of radiation effects in reactor candidate structural materials using high-energy heavy ion irradiations are pronounced. Experimental results and theoretical analysis suggested that irradiation with energetic particles especially high-energy heavy ions is very useful technique for simulating the evolution of microstructures and macro-properties of reactor structural materials. Furthermore, an on-going plan of material irradiation experiments using high energy H- and He-ions based on the Heavy Ion Research Facilities in Lanzhou (HIRFL) is also briefly interpreted. (authors)

Intense heavy ion beam-induced effects in carbon-based stripper foils

Energy Technology Data Exchange (ETDEWEB)

Kupka, Katharina

2016-08-15

Amorphous carbon or carbon-based stripper foils are commonly applied in accelerator technology for electron stripping of ions. At the planned facility for antiproton and ion research (FAIR) at the Helmholtzzentrum fuer Schwerionenforschung (GSI), Darmstadt, thin carbon stripper foils provide an option for directly delivering ions of intermediate charge states to the heavy ion synchrotron, SIS 18, in order to mitigate space charge limitations during high-intensity operation. In case of desired high end-energies in the synchrotron, a second stripping process by a thicker carbon foil provides ions of higher charge states for injection into the SIS18. High beam intensities and a pulsed beam structure as foreseen at FAIR pose new challenges to the stripper foils which experience enhanced degradation by radiation damage, thermal effects, and stress waves. In order to ensure reliable accelerator operation, radiation-hard stripper foils are required. This thesis aims to a better understanding of processes leading to degradation of carbon-based thin foils. Special focus is placed on ion-beam induced structure and physical property changes and on the influence of different beam parameters. Irradiation experiments were performed at the M3-beamline of the universal linear accelerator (UNILAC) at GSI, using swift heavy ion beams with different pulse lengths and repetition rates. Tested carbon foils were standard amorphous carbon stripper foils produced by the GSI target laboratory, as well as commercial amorphous and diamond-like carbon foils and buckypaper foils. Microstructural changes were investigated with various methods such as optical microscopy, scanning electron microscopy (SEM), profilometry and chromatic aberration measurements. For the investigation of structural changes X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), in-situ Fourier-transform infrared spectroscopy (FTIR) and small angle X

Intense heavy ion beam-induced effects in carbon-based stripper foils

International Nuclear Information System (INIS)

Kupka, Katharina

2016-08-01

Amorphous carbon or carbon-based stripper foils are commonly applied in accelerator technology for electron stripping of ions. At the planned facility for antiproton and ion research (FAIR) at the Helmholtzzentrum fuer Schwerionenforschung (GSI), Darmstadt, thin carbon stripper foils provide an option for directly delivering ions of intermediate charge states to the heavy ion synchrotron, SIS 18, in order to mitigate space charge limitations during high-intensity operation. In case of desired high end-energies in the synchrotron, a second stripping process by a thicker carbon foil provides ions of higher charge states for injection into the SIS18. High beam intensities and a pulsed beam structure as foreseen at FAIR pose new challenges to the stripper foils which experience enhanced degradation by radiation damage, thermal effects, and stress waves. In order to ensure reliable accelerator operation, radiation-hard stripper foils are required. This thesis aims to a better understanding of processes leading to degradation of carbon-based thin foils. Special focus is placed on ion-beam induced structure and physical property changes and on the influence of different beam parameters. Irradiation experiments were performed at the M3-beamline of the universal linear accelerator (UNILAC) at GSI, using swift heavy ion beams with different pulse lengths and repetition rates. Tested carbon foils were standard amorphous carbon stripper foils produced by the GSI target laboratory, as well as commercial amorphous and diamond-like carbon foils and buckypaper foils. Microstructural changes were investigated with various methods such as optical microscopy, scanning electron microscopy (SEM), profilometry and chromatic aberration measurements. For the investigation of structural changes X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), in-situ Fourier-transform infrared spectroscopy (FTIR) and small angle X

Effect of heavy ion irradiation on sucrose radical production

International Nuclear Information System (INIS)

Nakagawa, Kouichi; Sato, Yukio

2004-01-01

We investigated sucrose radicals produced by heavy-ion irradiation with various LETs (linear energy transfer) and the possibility for a sucrose ESR (electron spin resonance) dosimeter. The obtained spectral pattern was the same as that for helium (He) ions, carbon (C) ions, neon (Ne) ions, argon (Ar) ions, and iron (Fe) ions. Identical spectra were measured after one year, but the initial intensities decreased by a few percent when the samples were kept in ESR tubes with the caps at ambient temperature. The total spin concentration obtained by heavy-ion irradiation had a linear relation with the absorbed dose, and correlated logarithmically with the LET. Qualitative ESR analyses showed that the production of sucrose radicals depended on both the particle identity and the LET at the same dose. The production of spin concentration by He ions was the most sensitive to LET. Empirical relations between the LET and the spin yield for various particles imply that the LET at a certain dose can be estimated by the spin concentration. (authors)

Development of heavy-ion irradiation technique for single-event in semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Nemoto, Norio; Akutsu, Takao; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Naitoh, Ichiro; Itoh, Hisayoshi; Agematsu, Takashi; Kamiya, Tomihiro; Nashiyama, Isamu

1997-03-01

Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

Science.gov (United States)

Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

2017-01-01

In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

Heavy-ion irradiation induced diamond formation in carbonaceous materials

International Nuclear Information System (INIS)

Daulton, T. L.

1999-01-01

The basic mechanisms of metastable phase formation produced under highly non-equilibrium thermodynamic conditions within high-energy particle tracks are investigated. In particular, the possible formation of diamond by heavy-ion irradiation of graphite at ambient temperature is examined. This work was motivated, in part, by earlier studies which discovered nanometer-grain polycrystalline diamond aggregates of submicron-size in uranium-rich carbonaceous mineral assemblages of Precambrian age. It was proposed that the radioactive decay of uranium formed diamond in the fission particle tracks produced in the carbonaceous minerals. To test the hypothesis that nanodiamonds can form by ion irradiation, fine-grain polycrystalline graphite sheets were irradiated with 400 MeV Kr ions. The ion irradiated graphite (and unirradiated graphite control) were then subjected to acid dissolution treatments to remove the graphite and isolate any diamonds that were produced. The acid residues were then characterized by analytical and high-resolution transmission electron microscopy. The acid residues of the ion-irradiated graphite were found to contain ppm concentrations of nanodiamonds, suggesting that ion irradiation of bulk graphite at ambient temperature can produce diamond

In-situ kinetics of modifications induced by swift heavy ions in Al2O3: Colour centre formation, structural modification and amorphization

International Nuclear Information System (INIS)

Grygiel, C.; Moisy, F.; Sall, M.; Lebius, H.; Balanzat, E.; Madi, T.; Been, T.; Marie, D.; Monnet, I.

2017-01-01

This paper details in-situ studies of modifications induced by swift heavy ion irradiation in α-Al2O3. This complex behaviour is intermediary between the behaviour of amorphizable and non-amorphizable materials, respectively. A unique combination of irradiation experiments was performed at the IRRSUD beam line of the GANIL facility, with three different characterisation techniques: in-situ UV–Vis absorption, in-situ grazing incidence X-Ray diffraction and ex-situ transmission electron microscopy. This allows a complete study of point defects, and by depth profile of structural and microstructural modifications created on the trajectory of the incident ion. The α-Al2O3 crystals have been irradiated by 92 MeV Xenon and 74 MeV Krypton ions, the irradiation conditions have been chosen rather similar with an energy range where the ratio between electronic and nuclear stopping power changes dramatically as function of depth penetration. The main contribution of electronic excitation, above the threshold for track formation, is present beneath the surface to finally get almost only elastic collisions at the end of the projected range. Amorphization kinetics by the overlapping of multiple ion tracks is observed. In the crystalline matrix, long range strains, unit-cell swelling, local microstrain, domain size decrease, disordering of oxygen sublattice as well as colour centre formation are found. This study highlights the relationship between ion energy losses into a material and its response. While amorphization requires electronic stopping values above a certain threshold, point defects are predominantly induced by elastic collisions, while some structural modifications of the crystalline matrix, such as unit-cell swelling, are due to contribution of both electronic and nuclear processes.

A theoretical study on the influence of the homogeneity of heavy-ion irradiation field on the survival fraction of cells

International Nuclear Information System (INIS)

Wen Xiaoqiong; Li Qiang; Zhou Guangming; Li Wenjian; Wang Jufang; Wei Zengquan

2001-01-01

In order to provide theoretical basis for the homogeneity request of heavy-ion irradiation field, the most important design parameter of the heavy-ion radiotherapy facility planned in IMP (Institute of Modern Physics), the influence of the homogeneity of heavy-ion irradiation field on the survival fraction of cells was investigated theoretically. A formula for survival fraction of cells irradiated by the un-uniform heavy-ion irradiation field was deduced to estimate the influence of the homogeneity of heavy-ion irradiation field on the survival fraction of cells. The results show that the survival fraction of cells irradiation by the un-uniform irradiation field is larger than that of cells irradiated by the uniform irradiation field, and the survival fraction of cells increases as the homogeneity of heavy-ion irradiation field decreasing. Practically, the heavy-ion irradiation field can be treated as uniform irradiation field when its homogeneity is better than 95%. According to these results, design request for the homogeneity of heavy-ion irradiation field should be better than 95%. The present results also show that the agreement of homogeneity of heavy-ion irradiation field must be checked while comparing the survival fraction curves obtained by different laboratory

New cultivar produced by heavy-ion beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Kanaya, Takeshi; Miyazaki, Kiyoshi; Suzuki, Kenichi; Iwaki, Kazunari [Suntory Flowers Ltd., Higashiomi, Shiga (Japan); Ichida, Hiroyuki; Hayashi, Yoriko; Saito, Hiroyuki; Ryuto, Hiromichi; Fukunishi, Nobuhisa; Abe, Tomoko [RIKEN, Nishina Center, Wako, Saitama (Japan)

2007-03-15

The RIKEN accelerator research facility (RARF) is the one of the biggest facilities to accelerate heavy ions in all over the world since 1986. We started our trials in plant breeding since 1993. Soon we found that the ion beam is highly effective in the cause of mutagenesis of tobacco embryos during the fertilization without damage to other plant tissue. RIKEN and Suntory Flowers Ltd. have jointly developed some new ornamental varieties of Verbena and Petunia using ion-beam irradiation. We already put 5 new flower cultivars on the market in Japan, USA, Canada and EU since 2002. We report here a new variety of Torenia obtained by ion-beam irradiation. (author)

New cultivar produced by heavy-ion beam irradiation

International Nuclear Information System (INIS)

Kanaya, Takeshi; Miyazaki, Kiyoshi; Suzuki, Kenichi; Iwaki, Kazunari; Ichida, Hiroyuki; Hayashi, Yoriko; Saito, Hiroyuki; Ryuto, Hiromichi; Fukunishi, Nobuhisa; Abe, Tomoko

2007-01-01

The RIKEN accelerator research facility (RARF) is the one of the biggest facilities to accelerate heavy ions in all over the world since 1986. We started our trials in plant breeding since 1993. Soon we found that the ion beam is highly effective in the cause of mutagenesis of tobacco embryos during the fertilization without damage to other plant tissue. RIKEN and Suntory Flowers Ltd. have jointly developed some new ornamental varieties of Verbena and Petunia using ion-beam irradiation. We already put 5 new flower cultivars on the market in Japan, USA, Canada and EU since 2002. We report here a new variety of Torenia obtained by ion-beam irradiation. (author)

Cell survival in spheroids irradiated with heavy-ion beams

International Nuclear Information System (INIS)

Rodriguez, A.; Alpen, E.L.

1981-01-01

Biological investigations with accelerated heavy ions have been carried out regularly at the Lawrence Berkeley Laboratory Bevalac for the past four years. Most of the cellular investigations have been conducted on cell monolayer and suspension culture systems. The studies to date suggest that heavy charged particle beams may offer some radiotherapeutic advantages over conventional radiotherapy sources. The advantages are thought to lie primarily in an increased relative biological effectiveness (RBE), a decrease in the oxygen enhancement ratio (OER), and better tissue distribution dose. Experiments reported here were conducted with 400 MeV/amu carbon ions and 425 MeV/amu neon ions, using a rat brain gliosarcoma cell line grown as multicellular spheroids. Studies have been carried out with x-rays and high-energy carbon and neon ion beams. These studies evaluate high-LET (linear energy transfer) cell survival in terms of RBE and the possible contributions of intercellular communication. Comparisons were made of the post-irradiation survival characteristics for cells irradiated as multicellular spheroids (approximately 100 μm and 300 μm diameters) and for cells irradiated in suspension. These comparisons were made between 225-kVp x-rays, 400 MeV/amu carbon ions, and 425 MeV/amu neon ions

Application of heavy-ion microbeam system at Kyoto University: Energy response for imaging plate by single ion irradiation

International Nuclear Information System (INIS)

Tosaki, M.; Nakamura, M.; Hirose, M.; Matsumoto, H.

2011-01-01

A heavy-ion microbeam system for cell irradiation has been developed using an accelerator at Kyoto University. We have successfully developed proton-, carbon-, fluorine- and silicon-beams in order to irradiate a micro-meter sized area with ion counting, especially single ion irradiation. In the heavy-ion microbeam system, an imaging plate (IP) was utilized for beam diagnostics on the irradiation. The IP is widely used for radiography studies in biology. However, there are a few studies on the low linear energy transfer (LET) by single ions, i.e., low-intensity exposure. Thus we have investigated the energy response for the IP, which can be utilized for microbeam diagnostics.

Determination of Hydrogen Density by Swift Heavy Ions.

Science.gov (United States)

Xu, Ge; Barriga-Carrasco, M D; Blazevic, A; Borovkov, B; Casas, D; Cistakov, K; Gavrilin, R; Iberler, M; Jacoby, J; Loisch, G; Morales, R; Mäder, R; Qin, S-X; Rienecker, T; Rosmej, O; Savin, S; Schönlein, A; Weyrich, K; Wiechula, J; Wieser, J; Xiao, G Q; Zhao, Y T

2017-11-17

A novel method to determine the total hydrogen density and, accordingly, a precise plasma temperature in a lowly ionized hydrogen plasma is described. The key to the method is to analyze the energy loss of swift heavy ions interacting with the respective bound and free electrons of the plasma. A slowly developing and lowly ionized hydrogen theta-pinch plasma is prepared. A Boltzmann plot of the hydrogen Balmer series and the Stark broadening of the H_{β} line preliminarily defines the plasma with a free electron density of (1.9±0.1)×10^{16}  cm^{-3} and a free electron temperature of 0.8-1.3 eV. The temperature uncertainty results in a wide hydrogen density, ranging from 2.3×10^{16} to 7.8×10^{18}  cm^{-3}. A 108 MHz pulsed beam of ^{48}Ca^{10+} with a velocity of 3.652  MeV/u is used as a probe to measure the total energy loss of the beam ions. Subtracting the calculated energy loss due to free electrons, the energy loss due to bound electrons is obtained, which linearly depends on the bound electron density. The total hydrogen density is thus determined as (1.9±0.7)×10^{17}  cm^{-3}, and the free electron temperature can be precisely derived as 1.01±0.04  eV. This method should prove useful in many studies, e.g., inertial confinement fusion or warm dense matter.

Transient current induced in thin film diamonds by swift heavy ions

International Nuclear Information System (INIS)

Sato, Shin-ichiro; Makino, Takahiro; Ohshima, Takeshi; Kamiya, Tomihiro; Kada, Wataru

2017-01-01

Single crystal diamond is a suitable material for the next generation particle detectors because of the superior electrical properties and the high radiation tolerance. In order to investigate charge transport properties of diamond particle detectors, transient currents generated in diamonds by single swift heavy ions (26 MeV O 5+ and 45 MeV Si 7+ ) are investigated. We also measured two dimensional maps of transient currents by single ion hits. In the case of 50 μm-thick diamond, both the signal height and the collected charge are reduced by the subsequent ion hits and the charge collection time is extended. Our results are thought to be attributable to the polarization effect in diamond and it appears only when the transient current is dominated by hole current. In the case of 6 μm-thick diamond membrane, an “island” structure is found in the 2D map of transient currents. Signals in the islands shows different applied bias dependence from signals in other regions, indicating different crystal and/or metal contact quality. Simulation study of transient currents based on the Shockley-Ramo theorem clarifies that accumulation of space charges changes distribution of electric field in diamond and causes the polarization effect.

A function of mutagenesis on rhodotorula RY strain irradiated by heavy ion

International Nuclear Information System (INIS)

Li Hongyu; Li Chenghua; Ding Xinchun; Wang Jufang; Zhou Guangming; Xie Hongmei; Li Qiang; Dang bingrong; Wen Xiaoqiong; Li Wenjian; Wei Zengquan

2004-01-01

In this paper, red yeast (Rhodotorula RY Strain) that produces carotene is irradiated by 50 MeV/u 12 C 6+ heavy ion from Heavy Ion Accelerator in IMP. Fermentation tests show that 50 MeV/u 12 C 6+ heavy ion has a mutagenesis effect on the red yeast. Some strains of red yeast with changed production of carotene were found by screening. Meanwhile, by RFLP and RAPD analysis, authors have a further evidence that heavy ion can cause mutagenesis in Rhodotorula RY Strain. This presents a new prospect for the mutagenesis breeding by heavy ion in industry

Energy deposition by heavy ions: additivity of kinetic and potential energy contributions in hillock formation on CaF2.

Science.gov (United States)

Wang, Y Y; Grygiel, C; Dufour, C; Sun, J R; Wang, Z G; Zhao, Y T; Xiao, G Q; Cheng, R; Zhou, X M; Ren, J R; Liu, S D; Lei, Y; Sun, Y B; Ritter, R; Gruber, E; Cassimi, A; Monnet, I; Bouffard, S; Aumayr, F; Toulemonde, M

2014-07-18

Modification of surface and bulk properties of solids by irradiation with ion beams is a widely used technique with many applications in material science. In this study, we show that nano-hillocks on CaF2 crystal surfaces can be formed by individual impact of medium energy (3 and 5 MeV) highly charged ions (Xe(22+) to Xe(30+)) as well as swift (kinetic energies between 12 and 58 MeV) heavy xenon ions. For very slow highly charged ions the appearance of hillocks is known to be linked to a threshold in potential energy (Ep) while for swift heavy ions a minimum electronic energy loss per unit length (Se) is necessary. With our results we bridge the gap between these two extreme cases and demonstrate, that with increasing energy deposition via Se the Ep-threshold for hillock production can be lowered substantially. Surprisingly, both mechanisms of energy deposition in the target surface seem to contribute in an additive way, which can be visualized in a phase diagram. We show that the inelastic thermal spike model, originally developed to describe such material modifications for swift heavy ions, can be extended to the case where both kinetic and potential energies are deposited into the surface.

Quartz modification by Zn ion implantation and swift Xe ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Privezentsev, Vladimir [Institute of Physics and Technology, Russian Academy of Sciences, Moscow (Russian Federation); Kulikauskas, Vaclav [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (Russian Federation); Didyk, Alexander; Skuratov, Vladimir [Joint Institute of Nuclear Research, Dubna (Russian Federation); Steinman, Edward; Tereshchenko, Alexey; Kolesnikov, Nikolay [Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka (Russian Federation); Trifonov, Alexey; Sakharov, Oleg [National Research University ' ' MIET' ' , Zelenograd, Moscow (Russian Federation); Ksenich, Sergey [National University of Science and Technology ' ' MISiS' ' , Moscow (Russian Federation)

2017-07-15

The quartz slides were implanted by {sup 64}Zn{sup +} ions with dose of 5 x 10{sup 16}/cm{sup 2} and energy of 100 keV. After implantation, the amorphous metallic Zn nanoparticles with an average radius of 3.5 nm were created. The sample surface becomes nonuniform, its roughness is increased and its values rise up to 6 nm compared to virgin state, and the roughness maximum is at a value of about 0.8 nm. The surface is made up of valleys and hillocks which have a round shape with an average diameter about 200 nm. At the center of these hillocks are pores with a depth up to 6 nm and a diameter of about 20 nm. After implantation in UV-vis diapason, the optical transmission decreases while PL peak (apparently due to oxygen deficient centers) at wavelength of 400 nm increases. Then the samples were subjected to swift Xe ion irradiation with the fluences of 1 x 10{sup 12}-7.5 x 10{sup 14}/cm{sup 2} and energy of 167 MeV. After Xe irradiation, the sample surface roughness shat down to values of 0.5 nm and the roughness maximum is at a value of about 0.1 nm. Optical transmission in UV-vis diapason increases. The PL peak at wavelength of 400 nm is decreased while a PL peak at wavelength of 660 nm is raised. This peak is presumably due to non-bridging oxygen hole centers or/and NPs with structure Si(core)/SiO{sub 2}(shell). HRTEM image of Zn-implanted quartz subsurface layer. One can see the Zn amorphous nanoparticles, which confirms the electron diffraction pattern (insert). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Trupti, E-mail: tsphy91@gmail.com [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, Rahul; Vishnoi, Ritu [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

2017-04-01

Highlights: • Spin casted PCBM thin films (∼100 nm) are irradiated with 55 MeV Si{sup 4+} ion beam. • The decrease in band gap is observed after irradiation. • The surface properties is also dependent on incident ion fluences. • Polymerization reactions induced by energetic ions leads to modifications. - Abstract: The modifications produced by 55 MeV Si{sup 4+} swift heavy ion irradiation on the phenyl C{sub 61} butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 10{sup 10}, 1 × 10{sup 11} and 1 × 10{sup 12} ions/cm{sup 2} fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 10{sup 11} ions/cm{sup 2} fluence, the overlapping of ion tracks starts and produced overlapping effects.

Radiation tolerance of nanostructured ZrN coatings against swift heavy ion irradiation

International Nuclear Information System (INIS)

Janse van Vuuren, A.; Skuratov, V.A.; Uglov, V.V.; Neethling, J.H.; Zlotski, S.V.

2013-01-01

Nano-structured zirconium nitride layers – on Si substrates – of various thicknesses (0.1, 3, 10 and 20 μm) were irradiated with 167 MeV Xe, 250 MeV Kr and 695 MeV Bi ions to fluences in the range from 3 × 10 12 to 2.6 × 10 15 cm −2 for Xe, 1 × 10 13 to 7.06 × 10 13 cm −2 for Kr and 10 12 to 10 13 cm −2 for Bi. The purpose of these irradiation experiments is to simulate the effects of fission fragment bombardment on nanocrystalline ZrN. The irradiated layers where subsequently analysed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and nano-indentation hardness testing (NIH) techniques. XRD, TEM and NIH results indicate that ZrN has a very high tolerance to the effects of high energy irradiation

Optical waveguides in LiTaO{sub 3} crystals fabricated by swift C{sup 5+} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Liu, Guiyuan [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education), Shandong University, Jinan 250100 (China); School of Science, Shandong Jianzhu University, Jinan 250101 (China); He, Ruiyun [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education), Shandong University, Jinan 250100 (China); Akhmadaliev, Shavkat [Institute of Ion Beam and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01314 (Germany); Vázquez de Aldana, Javier R. [Laser Microprocessing Group, Universidad de Salamanca, Salamanca 37008 (Spain); Zhou, Shengqiang [Institute of Ion Beam and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01314 (Germany); Chen, Feng [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education), Shandong University, Jinan 250100 (China)

2014-04-01

We report on the optical waveguides, in both planar and ridge configurations, fabricated in LiTaO{sub 3} crystal by using carbon (C{sup 5+}) ions irradiation at energy of 15 MeV. The planar waveguide was produced by direct irradiation of swift C{sup 5+} ions, whilst the ridge waveguides were manufactured by using femtosecond laser ablation of the planar layer. The reconstructed refractive index profile of the planar waveguide has showed a barrier-shaped distribution, and the near-field waveguide mode intensity distribution was in good agreement with the calculated modal profile. After thermal annealing at 260 °C in air, the propagation losses of both the planar and ridge waveguides were reduced to 10 dB/cm.

Synthesis and characterization of graphene quantum dots and their size reduction using swift heavy ion beam

Science.gov (United States)

Mishra, Praveen; Bhat, Badekai Ramchandra

2018-04-01

Graphene quantum dots (GQDs) are nanosized fragments of graphene displaying quantum confinement effect. They have shown to be prepared from various methods which include ion beam etching of graphene. However, recently the modification of the GQDs has garnered tremendous attention owing to its suitability for various applications. Here, we have studied the effect of swift ion beam irradiation on the properties of GQDs. The ion beam treatment on the GQDs exhibited the change in observed photoluminescence of GQDs as they exhibited a blue luminescence on excitation with longwave UV (≈365 nm) due to the reduction in size and removal of the ethoxy (-C-O-C-) groups present on the quantum dots. This was confirmed by transmission electron microscopy, particle size analysis, and Fourier transform infrared spectroscopy.

Study on interaction of swift cluster ion beam with matter and irradiation effect (Joint research)

International Nuclear Information System (INIS)

Saito, Yuichi; Shibata, Hiromi

2010-07-01

This review covers results of the 'Study of interaction on swift cluster ion beam with matter and irradiation effect' supported by the Interorganization Atomic Energy Research Program from 2006FY to 2008FY. It is composed of a research abstract for each sub-group with viewgraphs which were presented at the group meeting held on March 2009 or 'Meeting of High LET radiation -From fundamental study among physics, chemistry and biology to medical applications-' sponsored by Japan Society of Radiation Chemistry, cosponsored by this research group. (author)

Cell cycle delays in synchronized cell populations following irradiation with heavy ions

International Nuclear Information System (INIS)

Scholz, M.

1992-11-01

Mammalian cells subjected to irradiation with heavy ions were investigated for cell cycle delays. The ions used for this purpose included Ne ions in the LET range of 400 keV/μm just as well as uranium ions of 16225 keV/μm. The qualitative changes in cell cycle progression seen after irradiation with Ne ions (400 keV/μm) were similar to those observed in connection with X-rays. Following irradiation with extremely heavy ions (lead, uranium) the majority of cells were even at 45 hours still found to be in the S phase or G 2 M phase of the first cycle. The delay cross section 'σ-delay' was introduced as a quantity that would permit quantitative comparisons to be carried out between the changes in cell progression and other effects of radiation. In order to evaluate the influence of the number of hits on the radiation effect observed, the size of the cell nucleus was precisely determined with reference to the cycle phase and local cell density. A model to simulate those delay effects was designed in such a way that account is taken of this probability of hit and that the results can be extrapolated from the delay effects after X-irradiation. On the basis of the various probabilities of hit for cells at different cycle stages a model was developed to ascertain the intensified effect following fractionated irradiation with heavy ions. (orig./MG) [de

Quantitative analysis of genes regulating sensitivity to heavy ion irradiation in cultured cell lines of malignant choroid melanoma

International Nuclear Information System (INIS)

Kumagai, Ken; Adachi, Nanao; Nimura, Yoshinori

2004-01-01

As a treatment strategy for malignant melanoma, heavy ion irradiation has been planned in National Institute of Radiological Sciences (NIRS). However, the molecular biology of the malignant melanoma cell after irradiation of heavy ion is still unknown. In this study, we used resistant and sensitive cell lines of malignant melanoma to study the effects of heavy ion irradiation. Furthermore, gene expression profiling of early response genes for heavy ion irradiation was carried out on these cell lines using microarray technology. (author)

Quantitative analysis of genes regulating sensitivity to heavy ion irradiation in cultured cell lines of malignant choroid melanoma

International Nuclear Information System (INIS)

Kumagai, Ken; Nimura, Yoshinori; Kato, Masaki; Seki, Naohiko; Miyahara, Nobuyuki; Aoki, Mizuho; Shino, Yayoi; Furusawa, Yoshiya; Mizota, Atsushi

2005-01-01

As a treatment strategy for malignant melanoma, heavy ion irradiation has been planned in National Institute of Radiological Sciences (NIRS). However, the molecular biology of the malignant melanoma cell after irradiation of heavy ion is still unknown. In this study, we used resistant and sensitive cell lines of malignant melanoma to study the effects of heavy ion irradiation. Furthermore, gene expression profiling of early response genes for heavy ion irradiation was carried out on these cell lines using microarray technology. (author)

Calculation of electronic stopping power along glancing swift heavy ion tracks in perovskites using ab initio electron density data

Energy Technology Data Exchange (ETDEWEB)

Osmani, O; Duvenbeck, A; Akcoeltekin, E; Meyer, R; Schleberger, M [Department of Physics, University of Duisburg-Essen, D-47048 Duisburg (Germany); Lebius, H [CIMAP, blvd Henri Becquerel, 14070 Caen (France)], E-mail: marika.schleberger@uni-due.de

2008-08-06

In recent experiments the irradiation of insulators of perovskite type with swift (E{approx}100 MeV) heavy ions under glancing incidence has been shown to provide a unique means to generate periodically arranged nanodots at the surface. The physical origin of these patterns has been suggested as stemming from a highly anisotropic electron density distribution within the bulk. In order to show the relevance of the electron density distribution of the target we present a model calculation for the system Xe{sup 23+} {yields} SrTiO{sub 3} that is known to produce the aforementioned surface modifications. On the basis of the Lindhard model of electronic stopping, we employ highly-resolved ab initio electron density data to describe the conversion of kinetic energy into excitation energy along the ion track. The primary particle dynamics are obtained via integration of the Newtonian equations of motion that are governed by a space- and time-dependent frictional force originating from Lindhard stopping. The analysis of the local electronic stopping power along the ion track reveals a pronounced periodic structure. The periodicity length varies strongly with the particular choice of the polar angle of incidence and is directly correlated to the experimentally observed formation of periodic nanodots at insulator surfaces.

Radiation tolerance of nanostructured ZrN coatings against swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Janse van Vuuren, A., E-mail: arnojvv@gmail.com [Centre for HRTEM, Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Skuratov, V.A. [Flerov Laboratory for Nuclear Reactions, Joint Institute for Nuclear Research, Dubna (Russian Federation); Uglov, V.V. [Department of Solid State Physics, Physics Faculty Belarusian State University, Minsk (Belarus); Neethling, J.H. [Centre for HRTEM, Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Zlotski, S.V. [Department of Solid State Physics, Physics Faculty Belarusian State University, Minsk (Belarus)

2013-11-15

Nano-structured zirconium nitride layers – on Si substrates – of various thicknesses (0.1, 3, 10 and 20 μm) were irradiated with 167 MeV Xe, 250 MeV Kr and 695 MeV Bi ions to fluences in the range from 3 × 10{sup 12} to 2.6 × 10{sup 15} cm{sup −2} for Xe, 1 × 10{sup 13} to 7.06 × 10{sup 13} cm{sup −2} for Kr and 10{sup 12} to 10{sup 13} cm{sup −2} for Bi. The purpose of these irradiation experiments is to simulate the effects of fission fragment bombardment on nanocrystalline ZrN. The irradiated layers where subsequently analysed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and nano-indentation hardness testing (NIH) techniques. XRD, TEM and NIH results indicate that ZrN has a very high tolerance to the effects of high energy irradiation.

On-line Raman spectroscopy of calcite and malachite during irradiation with swift heavy ions

International Nuclear Information System (INIS)

Dedera, Sebastian; Burchard, Michael; Glasmacher, Ulrich A.; Schöppner, Nicole; Trautmann, Christina; Severin, Daniel; Romanenko, Anton; Hubert, Christian

2015-01-01

A new on-line Raman System, which was installed at the M3-beamline at the UNILAC, GSI Helmholtzzentrum für Schwerionenforschung Darmstadt was used for first “in situ” spectroscopic measurements. Calcite and malachite samples were irradiated in steps between 1 × 10"9 and 1 × 10"1"2 ions/cm"2 with Au ions (calcite) and Xe ions (malachite) at an energy of 4.8 MeV/u. After irradiation, calcite revealed a new Raman band at 437 cm"−"1 and change of the full width at half maximum for the 1087 cm"−"1 Raman band. The Raman bands of malachite change significantly with increasing fluence. Up to a fluence of 7 × 10"1"0 ions/cm"2, all existing bands decrease in intensity. Between 8 × 10"1"0 and 1 × 10"1"1 ions/cm"2 a broad Cu_2O band between 110 and 220 cm"−"1 occurs, which superimposes the pre-existing Raman bands. Additionally, a new broad band between 1000 and 1750 cm"−"1 is formed, which is interpreted as a carbon coating. In contrast to the Cu_2O band, the carbon band vanished when further irradiating the sample. The installations as well as first in situ measurements at room temperature are presented.

Microstructural and microchemical evolution in vanadium alloys by heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Sekimura, Naoto; Kakiuchi, Hironori; Shirao, Yasuyuki; Iwai, Takeo [Tokyo Univ. (Japan)

1996-10-01

Microstructural and microchemical evolution in vanadium alloys were investigated using heavy ion irradiation. No cavities were observed in V-5Cr-5Ti alloys irradiated to 30 dpa at 520 and 600degC. Energy dispersive X-ray spectroscopy analyses showed that Ti peaks around grain boundaries. Segregation of Cr atoms was not clearly detected. Co-implanted helium was also found to enhance dislocation evolution in V-5Cr-5Ti. High density of matrix cavities were observed in V-5Fe alloys irradiated with dual ions, whereas cavities were formed only around grain boundaries in single ion irradiated V-5Fe. (author)

Heavy ion irradiation of crystalline water ice. Cosmic ray amorphisation cross-section and sputtering yield

Science.gov (United States)

Dartois, E.; Augé, B.; Boduch, P.; Brunetto, R.; Chabot, M.; Domaracka, A.; Ding, J. J.; Kamalou, O.; Lv, X. Y.; Rothard, H.; da Silveira, E. F.; Thomas, J. C.

2015-04-01

Context. Under cosmic irradiation, the interstellar water ice mantles evolve towards a compact amorphous state. Crystalline ice amorphisation was previously monitored mainly in the keV to hundreds of keV ion energies. Aims: We experimentally investigate heavy ion irradiation amorphisation of crystalline ice, at high energies closer to true cosmic rays, and explore the water-ice sputtering yield. Methods: We irradiated thin crystalline ice films with MeV to GeV swift ion beams, produced at the GANIL accelerator. The ice infrared spectral evolution as a function of fluence is monitored with in-situ infrared spectroscopy (induced amorphisation of the initial crystalline state into a compact amorphous phase). Results: The crystalline ice amorphisation cross-section is measured in the high electronic stopping-power range for different temperatures. At large fluence, the ice sputtering is measured on the infrared spectra, and the fitted sputtering-yield dependence, combined with previous measurements, is quadratic over three decades of electronic stopping power. Conclusions: The final state of cosmic ray irradiation for porous amorphous and crystalline ice, as monitored by infrared spectroscopy, is the same, but with a large difference in cross-section, hence in time scale in an astrophysical context. The cosmic ray water-ice sputtering rates compete with the UV photodesorption yields reported in the literature. The prevalence of direct cosmic ray sputtering over cosmic-ray induced photons photodesorption may be particularly true for ices strongly bonded to the ice mantles surfaces, such as hydrogen-bonded ice structures or more generally the so-called polar ices. Experiments performed at the Grand Accélérateur National d'Ions Lourds (GANIL) Caen, France. Part of this work has been financed by the French INSU-CNRS programme "Physique et Chimie du Milieu Interstellaire" (PCMI) and the ANR IGLIAS.

Swift Heavy Ion Induced Modification of Aliphatic Polymers

OpenAIRE

Hossain, Umme Habiba

2015-01-01

In this thesis, the high energy heavy ion induced modification of aliphatic polymers is studied. Two polymer groups, namely polyvinyl polymers (PVF, PVAc, PVA and PMMA) and fluoropolymers (PVDF, ETFE, PFA and FEP) were used in this work. Polyvinyl polymers were investigated since they will be used as insulating materials in the superconducting magnets of the new ion accelerators of the planned International Facility for Antiproton and Ion Research (FAIR) at the GSI Helmholtz-Centre of Heavy I...

Irradiation effect of different heavy ions and track section on the silkworm Bombyx mori

Energy Technology Data Exchange (ETDEWEB)

Tu Zhenli E-mail: tu514@yahoo.co.jp; Kobayashi, Yasuhiko; Kiguchi, Kenji; Watanabe, Hiroshi

2003-05-01

In order to compare the irradiation effects of different ions, wandering larvae were whole-body exposed or locally irradiated with 50-MeV {sup 4}He{sup 2+}, 220-MeV {sup 12}C{sup 5+}, and 350-MeV {sup 20}Ne{sup 8+} ions, respectively. For the whole-body-exposed individuals, the survival rates at the cocooning, pupation, and emergence stages all decreased as dose increased, and a range-dependent difference was clearly observed. For local irradiation of ovaries, irradiation effects depend very strongly on the projectile range. In the case of local irradiation of dermal cells by different track sections of heavy ions, the closer the target was to the high-LET section of the track, the more pronounced were the radiation effects. These results indicated that by selectively using ion species and adjusting the irradiation depth to the target, heavy-ion radiosurgery on particular tissues or organs of small experimental animals can be performed more accurately.

Irradiation effect of different heavy ions and track section on the silkworm Bombyx mori

International Nuclear Information System (INIS)

Tu Zhenli; Kobayashi, Yasuhiko; Kiguchi, Kenji; Watanabe, Hiroshi

2003-01-01

In order to compare the irradiation effects of different ions, wandering larvae were whole-body exposed or locally irradiated with 50-MeV 4 He 2+ , 220-MeV 12 C 5+ , and 350-MeV 20 Ne 8+ ions, respectively. For the whole-body-exposed individuals, the survival rates at the cocooning, pupation, and emergence stages all decreased as dose increased, and a range-dependent difference was clearly observed. For local irradiation of ovaries, irradiation effects depend very strongly on the projectile range. In the case of local irradiation of dermal cells by different track sections of heavy ions, the closer the target was to the high-LET section of the track, the more pronounced were the radiation effects. These results indicated that by selectively using ion species and adjusting the irradiation depth to the target, heavy-ion radiosurgery on particular tissues or organs of small experimental animals can be performed more accurately

Effect of 120 MeV Ag{sup 9+} ion irradiation of YCOB single crystals

Energy Technology Data Exchange (ETDEWEB)

Arun Kumar, R., E-mail: rarunpsgtech@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Department of Basic Sciences - Physics Division, PSG College of Technology, Coimbatore 641 004 (India); Dhanasekaran, R. [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

2012-09-15

Single crystals of yttrium calcium oxy borate (YCOB) grown from boron-tri-oxide flux were subjected to swift heavy ion irradiation using silver Ag{sup 9+} ions from the 15 UD Pelletron facility at Inter University Accelerator Center, New Delhi. The crystals were irradiated at 1 Multiplication-Sign 10{sup 13}, 5 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions/cm{sup 2} fluences at room temperature and with 5 Multiplication-Sign 10{sup 13} ions/cm{sup 2} fluence at liquid nitrogen temperature. The pristine and the irradiated samples were characterized by glancing angle X-ray diffraction, UV-Vis-NIR and photoluminescence studies. From the characterization studies performed on the samples, it is inferred that the crystals irradiated at liquid nitrogen temperature had fewer defects compared to the crystals irradiated at room temperature and the defects increased when the ion fluence was increased at room temperature.

Diffusion kinetics of the glucose/glucose oxidase system in swift heavy ion track-based biosensors

Science.gov (United States)

Fink, Dietmar; Vacik, Jiri; Hnatowicz, V.; Muñoz Hernandez, G.; Garcia Arrelano, H.; Alfonta, Lital; Kiv, Arik

2017-05-01

For understanding of the diffusion kinetics and their optimization in swift heavy ion track-based biosensors, recently a diffusion simulation was performed. This simulation aimed at yielding the degree of enrichment of the enzymatic reaction products in the highly confined space of the etched ion tracks. A bunch of curves was obtained for the description of such sensors that depend only on the ratio of the diffusion coefficient of the products to that of the analyte within the tracks. As hitherto none of these two diffusion coefficients is accurately known, the present work was undertaken. The results of this paper allow one to quantify the previous simulation and hence yield realistic predictions of glucose-based biosensors. At this occasion, also the influence of the etched track radius on the diffusion coefficients was measured and compared with earlier prediction.

Phase stability in thermally-aged CASS CF8 under heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Li, Meimei, E-mail: mli@anl.gov [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States); Miller, Michael K. [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831 (United States); Chen, Wei-Ying [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States)

2015-07-15

Highlights: • Thermally-aged CF8 was irradiated with 1 MeV Kr ions at 400 °C. • Atom probe tomography revealed a strong dose dependence of G-phase precipitates. • Phase separation of α and α′ in ferrite was reduced after irradiation. - Abstract: The stability of the microstructure of a cast austenitic stainless steel (CASS), before and after heavy ion irradiation, was investigated by atom probe tomography (APT). A CF8 ferrite–austenite duplex alloy was thermally aged at 400 °C for 10,000 h. After this treatment, APT revealed nanometer-sized G-phase precipitates and Fe-rich α and Cr-enriched α′ phase separated regions in the ferrite. The thermally-aged CF8 specimen was irradiated with 1 MeV Kr ions to a fluence of 1.88 × 10{sup 19} ions/m{sup 2} at 400 °C. After irradiation, APT analysis revealed a strong spatial/dose dependence of the G-phase precipitates and the α–α′ spinodal decomposition in the ferrite. For the G-phase precipitates, the number density increased and the mean size decreased with increasing dose, and the particle size distribution changed considerably under irradiation. The inverse coarsening process can be described by recoil resolution. The amplitude of the α–α′ spinodal decomposition in the ferrite was apparently reduced after heavy ion irradiation.

Nitric oxide-mediated bystander signal transduction induced by heavy-ion microbeam irradiation

Science.gov (United States)

Tomita, Masanori; Matsumoto, Hideki; Funayama, Tomoo; Yokota, Yuichiro; Otsuka, Kensuke; Maeda, Munetoshi; Kobayashi, Yasuhiko

2015-07-01

In general, a radiation-induced bystander response is known to be a cellular response induced in non-irradiated cells after receiving bystander signaling factors released from directly irradiated cells within a cell population. Bystander responses induced by high-linear energy transfer (LET) heavy ions at low fluence are an important health problem for astronauts in space. Bystander responses are mediated via physical cell-cell contact, such as gap-junction intercellular communication (GJIC) and/or diffusive factors released into the medium in cell culture conditions. Nitric oxide (NO) is a well-known major initiator/mediator of intercellular signaling within culture medium during bystander responses. In this study, we investigated the NO-mediated bystander signal transduction induced by high-LET argon (Ar)-ion microbeam irradiation of normal human fibroblasts. Foci formation by DNA double-strand break repair proteins was induced in non-irradiated cells, which were co-cultured with those irradiated by high-LET Ar-ion microbeams in the same culture plate. Foci formation was suppressed significantly by pretreatment with an NO scavenger. Furthermore, NO-mediated reproductive cell death was also induced in bystander cells. Phosphorylation of NF-κB and Akt were induced during NO-mediated bystander signaling in the irradiated and bystander cells. However, the activation of these proteins depended on the incubation time after irradiation. The accumulation of cyclooxygenase-2 (COX-2), a downstream target of NO and NF-κB, was observed in the bystander cells 6 h after irradiation but not in the directly irradiated cells. Our findings suggest that Akt- and NF-κB-dependent signaling pathways involving COX-2 play important roles in NO-mediated high-LET heavy-ion-induced bystander responses. In addition, COX-2 may be used as a molecular marker of high-LET heavy-ion-induced bystander cells to distinguish them from directly irradiated cells, although this may depend on the time

A model of chemical etching of olivine in the vicinity of the trajectory of a swift heavy ion

Energy Technology Data Exchange (ETDEWEB)

Gorbunov, S.A., E-mail: s.a.gorbunov@mail.ru [Lebedev Physical Institute of the Russian Academy of Sciences, Leninskij pr. 53, 119991 Moscow (Russian Federation); Rymzhanov, R.A. [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation); Starkov, N.I. [Lebedev Physical Institute of the Russian Academy of Sciences, Leninskij pr. 53, 119991 Moscow (Russian Federation); Volkov, A.E. [Lebedev Physical Institute of the Russian Academy of Sciences, Leninskij pr. 53, 119991 Moscow (Russian Federation); Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation); National Research Centre ‘Kurchatov Institute’, Kurchatov Sq. 1, 123182 Moscow (Russian Federation); Malakhov, A.I. [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation)

2015-12-15

Searching of superheavy elements, the charge spectra of heavy nuclei in Galactic Cosmic Rays was investigated within the OLYMPIA experiment using the database of etched ion tracks in meteorite olivine. Etching results in the formation of hollow syringe-like channels with diameters of 1–10 μm along the trajectories of these swift heavy ions (SHI). According to the activated complex theory, the local chemical activity is determined by an increase of the specific Gibbs energy of the lattice stimulated by structure transformations, long-range elastic fields, and interatomic bonds breaking generated in the vicinity of the ion trajectory. To determine the dependencies of the Gibbs free energy increase in SHI tracks in olivine on the mass, energy and charge of a projectile, we apply a multiscale model of excitation and relaxation of materials in the vicinity of the SHI trajectory (SHI tracks). Effect of spreading of fast electrons from the ion trajectory causing neutralization of metallic atoms resulting in an increase of the chemical activity of olivine at long distances from the ion trajectory (up to 5 μm) is estimated and discussed.

Kinetics of amorphization induced by swift heavy ions in {alpha}-quartz

Energy Technology Data Exchange (ETDEWEB)

Pena-Rodriguez, O., E-mail: ovidio.pena@uam.es [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid (CMAM-UAM), Cantoblanco, E-28049 Madrid (Spain); Instituto de Optica, Consejo Superior de Investigaciones Cientificas (IO-CSIC), C/Serrano 121, E-28006 Madrid (Spain); Manzano-Santamaria, J. [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid (CMAM-UAM), Cantoblanco, E-28049 Madrid (Spain); Euratom/CIEMAT Fusion Association, Madrid (Spain); Rivera, A. [Instituto de Fusion Nuclear, Universidad Politecnica de Madrid, C/ Jose Gutierrez Abascal 2, E-28006 Madrid (Spain); Garcia, G. [Laboratory of Synchrotron Light (CELLS-ALBA), 08290 Cerdanyola del Valles, Barcelona (Spain); Olivares, J. [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid (CMAM-UAM), Cantoblanco, E-28049 Madrid (Spain); Instituto de Optica, Consejo Superior de Investigaciones Cientificas (IO-CSIC), C/Serrano 121, E-28006 Madrid (Spain); Agullo-Lopez, F. [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid (CMAM-UAM), Cantoblanco, E-28049 Madrid (Spain); Departamento de Fisica de Materiales, Universidad Autonoma de Madrid (UAM), Cantoblanco, E-28049 Madrid (Spain)

2012-11-15

The kinetics of amorphization in crystalline SiO{sub 2} ({alpha}-quartz) under irradiation with swift heavy ions (O{sup +1} at 4 MeV, O{sup +4} at 13 MeV, F{sup +2} at 5 MeV, F{sup +4} at 15 MeV, Cl{sup +3} at 10 MeV, Cl{sup +4} at 20 MeV, Br{sup +5} at 15 and 25 MeV and Br{sup +8} at 40 MeV) has been analyzed in this work with an Avrami-type law and also with a recently developed cumulative approach (track-overlap model). This latter model assumes a track morphology consisting of an amorphous core (area {sigma}) and a surrounding defective halo (area h), both being axially symmetric. The parameters of the two approaches which provide the best fit to the experimental data have been obtained as a function of the electronic stopping power S{sub e}. The extrapolation of the {sigma}(S{sub e}) dependence yields a threshold value for amorphization, S{sub th} Almost-Equal-To 2.1 keV/nm; a second threshold is also observed around 4.1 keV/nm. We believe that this double-threshold effect could be related to the appearance of discontinuous tracks in the region between 2.1 and 4.1 keV/nm. For stopping power values around or below the lower threshold, where the ratio h/{sigma} is large, the track-overlap model provides a much better fit than the Avrami function. Therefore, the data show that a right modeling of the amorphization kinetics needs to take into account the contribution of the defective track halo. Finally, a short comparative discussion with the kinetic laws obtained for elastic collision damage is given.

Model of wet chemical etching of swift heavy ions tracks

Science.gov (United States)

Gorbunov, S. A.; Malakhov, A. I.; Rymzhanov, R. A.; Volkov, A. E.

2017-10-01

A model of wet chemical etching of tracks of swift heavy ions (SHI) decelerated in solids in the electronic stopping regime is presented. This model takes into account both possible etching modes: etching controlled by diffusion of etchant molecules to the etching front, and etching controlled by the rate of a reaction of an etchant with a material. Olivine ((Mg0.88Fe0.12)2SiO4) crystals were chosen as a system for modeling. Two mechanisms of chemical activation of olivine around the SHI trajectory are considered. The first mechanism is activation stimulated by structural transformations in a nanometric track core, while the second one results from neutralization of metallic atoms by generated electrons spreading over micrometric distances. Monte-Carlo simulations (TREKIS code) form the basis for the description of excitations of the electronic subsystem and the lattice of olivine in an SHI track at times up to 100 fs after the projectile passage. Molecular dynamics supplies the initial conditions for modeling of lattice relaxation for longer times. These simulations enable us to estimate the effects of the chemical activation of olivine governed by both mechanisms. The developed model was applied to describe chemical activation and the etching kinetics of tracks of Au 2.1 GeV ions in olivine. The estimated lengthwise etching rate (38 µm · h-1) is in reasonable agreement with that detected in the experiments (24 µm · h-1).

Swift heavy ion irradiated SnO_2 thin film sensor for efficient detection of SO_2 gas

International Nuclear Information System (INIS)

Tyagi, Punit; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

2016-01-01

Highlights: • Response of Ni"7"+ ion irradiated (100 MeV) SnO_2 film have been performed. • Effect of irradiation on the structural and optical properties of SnO_2 film is studied. • A decrease in operating temperature and increased response is seen after irradiation. - Abstract: Gas sensing response studies of the Ni"7"+ ion irradiated (100 MeV) and non-irradiated SnO_2 thin film sensor prepared under same conditions have been performed towards SO_2 gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO_2 thin film based sensor have been studied. A significant decrease in operating temperature (from 220 °C to 60 °C) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO_2 thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO_2 thin film by Ni"7"+ ions.

ESR investigation of L-α-alanine and sucrose radicals produced by heavy-ion irradiation

International Nuclear Information System (INIS)

Nakagawa, K.; Sato, Y.

2005-01-01

We investigated sucrose and L-α-alanine radicals produced by heavy (particle) ion irradiation with various LETs (linear energy transfer). The impact of the heavy ions on the samples produced stable free radicals, which were analyzed by ESR (electron spin resonance). Identical spectra were measured after one year. The obtained spectral patterns were the same as those for helium (He), carbon (C), and neon (Ne) ions irradiation. The absorbed dose dependences for the irradiated sucrose and alanine samples were examined. The ESR response has a linear relation with the absorbed dose. The ESR response at 60 Gy was slightly lower than a linear line for sucrose; however, the response showed good linearity for the alanine. In addition, the total spin concentration obtained by heavy-ion irradiation correlated logarithmically with the LET. Qualitative ESR analyse showed that the production of sucrose and alanine radicals depended on both different particle irradiation and the LET under the same dose. Thus, the present ESR results imply that sucrose together with L-α-alanine can be used to monitor LET as well as the number of ionizing particle for the production of stable free radicals. (author)

Heavy ion radiation biology research facility and ongoing activities at the Inter-University Accelerator Centre, New Delhi

International Nuclear Information System (INIS)

Sarma, Asitikantha

2014-01-01

Heavy Ion Radiation Biology is an interdisciplinary science involving use of charged particle accelerator in the study of molecular biology. It is the study of the interaction of a beam of swift heavy ions with a biological system. In contrast to the sparsely ionizing photon or electron radiation, the high velocity charged heavy ions leave a track of densely populated ionization sites resulting in clustered DNA damage. The growing interest in this field encompasses the studies in gene expression, mechanisms of cell death, DNA damage and repair, signal transduction etc. induced because of this unique assault on the genetic material. IUAC radiation biology programme is focused on the in-vitro studies of different effects of heavy ion irradiation on eukaryotic cells. The facility provides a laboratory for pre and post irradiation treatment of samples. The irradiation system called ASPIRE (Automatic Sample Positioning for Irradiation in Radiation Biology Experiments) is installed at the dedicated Radiation Biology Beam line. It produces a nearly uniform flux distribution over a irradiation field of 40 mm diameter. The particle doses can be preselected and repeated within inherent statistical accuracy. The particle energy can also be measured. The facility is at present utilized by the University researchers of India. A few results obtained by the investigators would be presented. The outcome of the research in heavy ion radiation biology would be of immense use in augmenting the efficacy of Hadron therapy of cancer. The results would also contribute to the field of space radiation protection. It would also help in understanding the phenomena subsequent to complex DNA damage. (author)

Physico-chemical changes in heavy ions irradiated polymer foils by differential scanning calorimetry

International Nuclear Information System (INIS)

Ciesla, K.; Trautmann, Ch.; Vansant, E.F.

1994-01-01

The sample of commercial PETP (Hostaphan) and very heavy ions irradiated products were investigated by differential scanning calorimetry in nitrogen flow. Irradiation were performed with Dy ions of 13 MeV/u with fluences 5 x 10 10 ions/cm 2 . Differences were observed in melting behaviour of unirradiated and irradiated foils. The influence of irradiation conditions on the results was noticed. Moreover the samples of polyimide (Kapton) and polycarbonate (Macrofol) irradiated in similar conditions were examined by DSC. The DSC traces have been compared with those of unirradiated reference samples. (author). 8 refs, 5 figs

X-ray diffraction study of the Y{sub 2}Ti{sub 2}O{sub 7} pyrochlore disordering sequence under irradiation

Energy Technology Data Exchange (ETDEWEB)

Soulié, Aurélien, E-mail: aurelien.soulie@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Université Paris-Saclay, F-91191 Gif sur Yvette (France); CEA, DEN, Service de Recherches de Métallurgie Appliqué, Université Paris-Saclay, F-91191 Gif sur Yvette (France); Menut, Denis [CEA, DEN, Service de Recherches de Métallurgie Appliqué, Université Paris-Saclay, F-91191 Gif sur Yvette (France); Crocombette, Jean-Paul [CEA, DEN, Service de Recherches de Métallurgie Physique, Université Paris-Saclay, F-91191 Gif sur Yvette (France); Chartier, Alain [CEA, DEN, Service de la Corrosion et du Comportement des Matériaux dans leur Environnement, Laboratoire de Modélisation, de Thermodynamique et de Thermochimie, Université Paris-Saclay, F-91191 Gif sur Yvette (France); Sellami, Neila [Univ. Paris Sud, ICMMO-SP2M, Bât. 410, F-91405 Orsay (France); Sattonnay, Gaël [Univ. Paris-Sud, CSNSM, CNRS, IN2P3, Bât. 108, F-91405 Orsay (France); Monnet, Isabelle [CIMAP, CEA, CNRS, Université de Caen, BP 5133, F-14070 Caen Cedex 5 (France); and others

2016-11-15

The disordering sequence of Y{sub 2}Ti{sub 2}O{sub 7} pyrochlore, a nano-oxide phase that strengthens ODS steels under irradiation is studied in the experimental and modeling framework. XRD analysis has been performed considering both swift heavy ion and low energy/low mass ion irradiations. The simulation within molecular dynamics of Frenkel pair accumulation proves able to reproduce the variation of the amorphization fluence with temperature. XRD patterns calculated from the simulations reproduce well the patterns observed experimentally in the literature. Both experiments and calculations point to a first transition from pyrochlore to fluorite before an eventual amorphization. For swift heavy ion irradiations with 93 MeV Xe ions, tracks of direct impact amorphization are visible by HRTEM. Advanced refinement shows that one third of the pyrochlore impacted by an ion transforms into fluorite, while two third are directly amorphized. - Highlights: • A comparison between swift heavy ion and low energy/low mass ion irradiation of Y{sub 2}Ti{sub 2}O{sub 7} pyrochlore is performed. • Simulations of the irradiation with Molecular dynamics reproduce the amorphization dose at low energy/mass ion irradiation. • Advanced refinement of X-ray diffraction patterns gives the evolution of phase fractions in pyrochlore under irradiation. • The disordering sequence a transition from pyrochlore to defect fluorite before an eventual amorphization.

A study of defect cluster formation in vanadium by heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Sekimura, Naoto; Shirao, Yasuyuki; Morishita, Kazunori [Tokyo Univ. (Japan)

1996-10-01

Formation of defect clusters in thin foils of vanadium was investigated by heavy ion irradiation. In the very thin region of the specimens less than 20 nm, vacancy clusters were formed under gold ion irradiation, while very few clusters were detected in the specimens irradiated with 200 and 400 keV self-ions up to 1 x 10{sup 16} ions/m{sup 2}. The density of vacancy clusters were found to be strongly dependent on ion energy. Only above the critical value of kinetic energy transfer density in vanadium, vacancy clusters are considered to be formed in the cascade damage from which interstitials can escape to the specimen surface in the very thin region. (author)

Investigations on the structural and optical properties of the swift heavy ion irradiated 6H-SiC

International Nuclear Information System (INIS)

Viswanathan, E.; Katharria, Y.S.; Selvakumar, S.; Arulchakkaravarthi, A.; Kanjilal, D.; Sivaji, K.

2011-01-01

Research highlights: → We have reported the structural and optical properties of SHI irradiated 6H-SiC. → The change in Raman modes evidences the disorder accumulation with respect to ion fluence. → The disorder also causes the modification in the optical properties. → The time resolved photoluminescence reflects multiple lifetimes due to the degenerate defects states. → The study also reveals the presence of partial amorphous region due to SHI irradiation. -- Abstract: Single crystal 6H-SiC wafers have been irradiated with 150 MeV Ag 12+ ions with fluences ranging from 1 x 10 11 to 1 x 10 13 ions/cm 2 at 300 K. The defect accumulation as a function of fluence was studied to determine changes in structural and optical properties. The variation in the fundamental Raman modes of the crystalline 6H-SiC due to irradiation has been correlated with the disorder accumulation. The creation of defect states due to irradiation in the bandgap affects the blue-green photoluminescence emission in the irradiated samples. The UV-Visible absorption studies support the existence of defect states in the bandgap which is observed by the shift in the absorption edge towards the lower energy side with increasing fluence. Time Correlated Single Photon Counting photoluminescence decay results suggest that the existing defect states are radiative, exhibiting three lifetimes when irradiated with a fluence 5 x 10 11 ions/cm 2 . The total number of lifetime components was reduced for a fluence 1 x 10 13 ions/cm 2 as the defect states produced increase the non-radiative defect centres. These results suggest that the accumulation of defects due to irradiation at fluences 5 x 10 11 and 1 x 10 13 ions/cm 2 are degenerate configurations which exhibit multiple lifetimes in photoluminescence studies. It is inferred that the optically active defect states influence the transition rate of charge carriers in this device material.

Investigations on the structural and optical properties of the swift heavy ion irradiated 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Viswanathan, E. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); Katharria, Y.S. [Laboratoire de Physique des Interactions Ioniques et Moleculaires, Equipe Plasma-Surface, case 241, 13397 Marseille Cedex 20 (France); Selvakumar, S. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); Arulchakkaravarthi, A. [Sinmat Inc., 2153 SE Hawthorne Rd., Gainesville Fl-32641 (United States); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067 (India); Sivaji, K., E-mail: sivaji.krishnan@yahoo.co [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India)

2011-05-15

Research highlights: {yields} We have reported the structural and optical properties of SHI irradiated 6H-SiC. {yields} The change in Raman modes evidences the disorder accumulation with respect to ion fluence. {yields} The disorder also causes the modification in the optical properties. {yields} The time resolved photoluminescence reflects multiple lifetimes due to the degenerate defects states. {yields} The study also reveals the presence of partial amorphous region due to SHI irradiation. -- Abstract: Single crystal 6H-SiC wafers have been irradiated with 150 MeV Ag{sup 12+} ions with fluences ranging from 1 x 10{sup 11} to 1 x 10{sup 13} ions/cm{sup 2} at 300 K. The defect accumulation as a function of fluence was studied to determine changes in structural and optical properties. The variation in the fundamental Raman modes of the crystalline 6H-SiC due to irradiation has been correlated with the disorder accumulation. The creation of defect states due to irradiation in the bandgap affects the blue-green photoluminescence emission in the irradiated samples. The UV-Visible absorption studies support the existence of defect states in the bandgap which is observed by the shift in the absorption edge towards the lower energy side with increasing fluence. Time Correlated Single Photon Counting photoluminescence decay results suggest that the existing defect states are radiative, exhibiting three lifetimes when irradiated with a fluence 5 x 10{sup 11} ions/cm{sup 2}. The total number of lifetime components was reduced for a fluence 1 x 10{sup 13} ions/cm{sup 2} as the defect states produced increase the non-radiative defect centres. These results suggest that the accumulation of defects due to irradiation at fluences 5 x 10{sup 11} and 1 x 10{sup 13} ions/cm{sup 2} are degenerate configurations which exhibit multiple lifetimes in photoluminescence studies. It is inferred that the optically active defect states influence the transition rate of charge carriers in this

Antiradiation Vaccine: Technology Development- Radiation Tolerance,Prophylaxis, Prevention And Treatment Of Clinical Presentation After Heavy Ion Irradiation.

Science.gov (United States)

Popov, Dmitri; Maliev, Slava; Jones, Jeffrey

Introduction: Research in the field of biological effects of heavy charged particles is necessary for both heavy-ion therapy (hadrontherapy) and protection from the exposure to galactic cosmic radiation in long-term manned space missions.[Durante M. 2004] In future crew of long-term manned missions could operate in exremely high hadronic radiation areas of space and will not survive without effective radiation protection. An Antiradiation Vaccine (AV) must be an important part of a countermeasures regimen for efficient radiation protection purposes of austronauts-cosmonauts-taukonauts: immune-prophylaxis and immune-therapy of acute radiation toxic syndromes developed after heavy ion irradiation. New technology developed (AV) for the purposes of radiological protection and improvement of radiation tolerance and it is quite important to create protective immune active status which prevent toxic reactions inside a human body irradiated by high energy hadrons.[Maliev V. et al. 2006, Popov D. et al.2008]. High energy hadrons produce a variety of secondary particles which play an important role in the energy deposition process, and characterise their radiation qualities [Sato T. et al. 2003] Antiradiation Vaccine with specific immune-prophylaxis by an anti-radiation vaccine should be an important part of medical management for long term space missions. Methods and experiments: 1. Antiradiation vaccine preparation standard, mixture of toxoid form of Radiation Toxins [SRD-group] which include Cerebrovascular RT Neurotoxin, Cardiovascular RT Neurotoxin, Gastrointestinal RT Neurotoxin, Hematopoietic RT Hematotoxin. Radiation Toxins of Radiation Determinant Group isolated from the central lymph of gamma-irradiated animals with Cerebrovascular, Cardiovascular, Gastro-intestinal, Hematopoietic forms of ARS. Devices for radiation are "Panorama", "Puma". 2. Heavy ion exposure was accomplished at Department of Research Institute of Nuclear Physics, Dubna, Russia. The heavy ions

Micro-Raman studies of swift heavy ion irradiation induced structural and conformational changes in polyaniline nanofibers

Energy Technology Data Exchange (ETDEWEB)

Banerjee, Somik [Materials Research Laboratory, Department of Physics, Tezpur University, Tezpur 784028, Assam (India); Kumar, A., E-mail: ask@tezu.ernet.i [Materials Research Laboratory, Department of Physics, Tezpur University, Tezpur 784028, Assam (India)

2010-09-15

Polyaniline (PAni) nanofibers doped with camphor sulfonic acid have been irradiated with 90 MeV O{sup 7+} ions at different fluences (3 x 10{sup 10}-1 x 10{sup 12} ions/cm{sup 2}) using a 15UD Pelletron accelerator under ultra-high vacuum. XRD studies reveal a decrease in the domain length and an increase in the strain upon SHI irradiation. The increase in d-spacing corresponding to the (1 0 0) reflection of PAni nanofibers with increasing irradiation fluence has been attributed to the increase in the tilt angle of the chains with respect to the (a, b) basal plane of PAni. Decrease in the integral intensity upon SHI irradiation indicates amorphization of the material. Micro-Raman ({mu}R) studies confirm amorphization of the PAni nanofibers and also show that the PAni nanofibers get de-doped upon SHI irradiation. {mu}R spectroscopy also reveals a benzenoid to quinoid transition in the PAni chain upon SHI irradiation. TEM results show that the size of PAni nanofibers decreases with the increase in irradiation fluence, which has been attributed to the fragmentation of PAni nanofibers in the core of amorphized tracks caused by SHI irradiation.

Modification of graphene by ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Bukowska, Hanna; Akcoeltekin, Sevilay; El Kharrazi, Mourad; Schleberger, Marika [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Osmani, Orkhan [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Technische Universitaet Kaiserslautern, Fachbereich Physik, Gottlieb-Daimler-Strasse, Gebaeude 47, 67663 Kaiserslautern (Germany)

2010-07-01

Ion irradiation can be used to modify surfaces on the nanometer scale. We investigate graphene on different insulator (SrTiO{sub 3}, TiO{sub 2}, and Al{sub 2}O{sub 3}) and semiconductor (SiO{sub 2}) substrates. The bombardment of those target surfaces with swift heavy ions under grazing angle of incidence creates chains of nanodots on the substrate and folds graphene to typical origami-like structures. The shape of the folded graphene seems to depend on the length of the tracks. The length can be controlled by the angle of incidence. From the analysis of atomic force microscopy measurements, we classify the different types of modifications, with the aim to determine the relationship between chain length and origami shape. Further more we want to develop a theoretical understanding of the physical processes leading to the folding.

Mono and sequential ion irradiation induced damage formation and damage recovery in oxide glasses: Stopping power dependence of the mechanical properties

International Nuclear Information System (INIS)

Mir, A.H.; Monnet, I.; Toulemonde, M.; Bouffard, S.; Jegou, C.; Peuget, S.

2016-01-01

Simple and complex borosilicate glasses were irradiated with single and double ion beams of light and heavy ions over a broad fluence and stopping power range. As a result of the heavy ion irradiation (U, Kr, Au), the hardness was observed to diminish and saturate after a decrease by 35 ± 1%. Unlike slow and swift heavy ion irradiation, irradiation with light ions (He,O) induced a saturation hardness decrease of 18 ± 1% only. During double ion beam irradiation; where glasses were first irradiated with a heavy ion (gold) and then by a light ion (helium), the light ion irradiation induced partial damage recovery. As a consequence of the recovery effect, the hardness of the pre-irradiated glasses increased by 10–15% depending on the chemical composition. These results highlight that the nuclear energy loss and high electronic energy loss (≥4 keV/nm) result in significant and similar modifications whereas light ions with low electronic energy loss (≤1 keV/nm) result in only mild damage formation in virgin glasses and recovery in highly pre-damaged glasses. These results are important to understand the damage formation and recovery in actinide bearing minerals and in glasses subjected to self-irradiation by alpha decays. - Highlights: • Behavior of glasses strongly depends on the electronic energy loss (Se) of the ions. • High Se (≥4 keV/nm) induces large changes in comparison to lower Se values. • Apart from mild damage formation, low Se causes recovery of pre-existing damage. • Alpha induced partial recovery of the damage would occur in nuclear waste glasses.

Susceptible genes and molecular pathways related to heavy ion irradiation in oral squamous cell carcinoma cells

International Nuclear Information System (INIS)

Fushimi, Kazuaki; Uzawa, Katsuhiro; Ishigami, Takashi; Yamamoto, Nobuharu; Kawata, Tetsuya; Shibahara, Takahiko; Ito, Hisao; Mizoe, Jun-etsu; Tsujii, Hirohiko; Tanzawa, Hideki

2008-01-01

Background and purpose: Heavy ion beams are high linear energy transfer (LET) radiation characterized by a higher relative biologic effectiveness than low LET radiation. The aim of the current study was to determine the difference of gene expression between heavy ion beams and X-rays in oral squamous cell carcinoma (OSCC)-derived cells. Materials and methods: The OSCC cells were irradiated with accelerated carbon or neon ion irradiation or X-rays using three different doses. We sought to identify genes the expression of which is affected by carbon and neon ion irradiation using Affymetrix GeneChip analysis. The identified genes were analyzed using the Ingenuity Pathway Analysis Tool to investigate the functional network and gene ontology. Changes in mRNA expression in the genes were assessed by real-time quantitative reverse transcriptase-polymerase chain reaction (qRT-PCR). Results: The microarray analysis identified 84 genes that were modulated by carbon and neon ion irradiation at all doses in OSCC cells. Among the genes, three genes (TGFBR2, SMURF2, and BMP7) and two genes (CCND1 and E2F3), respectively, were found to be involved in the transforming growth factor β-signaling pathway and cell cycle:G1/S checkpoint regulation pathway. The qRT-PCR data from the five genes after heavy ion irradiation were consistent with the microarray data (P < 0.01). Conclusion: Our findings should serve as a basis for global characterization of radiation-regulated genes and pathways in heavy ion-irradiated OSCC

High dose radiation damage in nuclear energy structural materials investigated by heavy ion irradiation simulation

International Nuclear Information System (INIS)

Zheng Yongnan; Xu Yongjun; Yuan Daqing

2014-01-01

Structural materials in ITER, ADS and fast reactor suffer high dose irradiations of neutrons and/or protons, that leads to severe displacement damage up to lOO dpa per year. Investigation of radiation damage induced by such a high dose irradiation has attracted great attention along with the development of nuclear energy facilities of new generation. However, it is deeply hampered for the lacking of high dose neutron and proton sources. Irradiation simulation of heavy ions produced by accelerators opens up an effective way for laboratory investigation of high dose irradiation induced radiation damage encountered in the ITER, ADS, etc. Radiation damage is caused mainly by atomic displacement in materials. The displacement rate of heavy ions is about lO 3 ∼10 7 orders higher than those of neutrons and protons. High displacement rate of heavy ions significantly reduces the irradiation time. The heavy ion irradiation simulation technique (HIIS) technique has been developed at China Institute of Atomic Energy and a series of the HIIS experiments have been performed to investigate radiation damage in stainless steels, tungsten and tantalum at irradiation temperatures from room temperature to 800 ℃ and in the irradiation dose region up to 100 dpa. The experimental results show that he radiation swelling peak for the modified stainless steel appears in the temperature region around 580 ℃ and the radiation damage is more sensitive to the temperature, the size of the radiation induced vacancy cluster or void increase with the increasing of the irradiation dose, and among the three materials the home-made modified stainless steel has the best radiation resistant property. (authors)

Single-Event Effects in Power MOSFETs During Heavy Ion Irradiations Performed After Gamma-Ray Degradation

Science.gov (United States)

Busatto, G.; De Luca, V.; Iannuzzo, F.; Sanseverino, A.; Velardi, F.

2013-10-01

The robustness of commercial power metal-oxide semiconductor field-effect transistors to combined gamma-heavy ion irradiation has been investigated, evidence that the degradation of the gate oxide caused by the γ irradiation can severely corrupt the robustness to single-event effects and drastically modify the physical behavior of the device under test after the impact of a heavy ion. A decrease of the critical voltages at which destructive burnouts and gate ruptures for heavy ion impact appear, has been detected in the devices under test, which were previously irradiated with γ rays. In addition, the amount of critical voltage reduction is strictly related to the amount of the absorbed γ-ray dose. Furthermore, at the failure voltage, the behavior of the device is affected by the conduction of a current through the gate oxide. Moreover, the single-event gate rupture” of the device appears at lower voltages because of the reduction of the Fowler-Nordheim limit in the γ-irradiated devices.

Study on structural recovery of graphite irradiated with swift heavy ions at high temperature

Energy Technology Data Exchange (ETDEWEB)

Pellemoine, F., E-mail: pellemoi@frib.msu.edu [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI 48824 (United States); Avilov, M. [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI 48824 (United States); Bender, M. [Dept. of Materials Research, GSI Helmholtzzentrum für Schwerionenforschung, Planckstr. 1, Darmstadt 64291 (Germany); Ewing, R.C. [Dept. of Geological Sciences, Stanford University, Stanford, CA 94305-2115 (United States); Fernandes, S. [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI 48824 (United States); Lang, M. [Dept. of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996-2300 (United States); Li, W.X. [Dept. of Geological Sciences, Stanford University, Stanford, CA 94305-2115 (United States); Mittig, W. [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI 48824 (United States); National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824-1321 (United States); Schein, M. [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI 48824 (United States); Severin, D. [Dept. of Materials Research, GSI Helmholtzzentrum für Schwerionenforschung, Planckstr. 1, Darmstadt 64291 (Germany); Tomut, M. [Dept. of Materials Research, GSI Helmholtzzentrum für Schwerionenforschung, Planckstr. 1, Darmstadt 64291 (Germany); Laboratory of Magnetism and Superconductivity, National Institute for Materials Physics NIMP, Bucharest (Romania); Trautmann, C. [Dept. of Materials Research, GSI Helmholtzzentrum für Schwerionenforschung, Planckstr. 1, Darmstadt 64291 (Germany); Dept. of Materials Science, Technische Universität Darmstadt, Darmstadt (Germany); and others

2015-12-15

Thin graphite foils bombarded with an intense high-energy (8.6 MeV/u) gold beam reaching fluences up to 1 × 10{sup 15} ions/cm{sup 2} lead to swelling and electrical resistivity changes. As shown earlier, these effects are diminished with increasing irradiation temperature. The work reported here extends the investigation of beam induced changes of these samples by structural analysis using synchrotron X-ray diffraction and transmission electron microscope. A nearly complete recovery from swelling at irradiation temperatures above about 1500 °C is identified.

Optical transmission of silica glass during swift-heavy-ion implantation

International Nuclear Information System (INIS)

Plaksin, Oleg; Okubo, Nariaki; Takeda, Yoshihiko; Amekura, Hiroshi; Kono, Kenichiro; Kishimoto, Naoki

2004-01-01

Metal nanoparticles fabricated by heavy-ion implantation of insulators are promising for non-linear optical applications. Spectra of optical transmission of silica glass in the visible region were measured during and after implantation of 3 MeV Cu 2+ ions. Three absorption bands contribute to the spectra: transient absorption (TA) at 2.34 eV, a surface plasmon resonance (SPR) peak at 2.21 eV and a tail of residual absorption (RA), which increases when the photon energy is increased from 2.2 to 2.6 eV. The TA and a change of the SPR peak strongly contribute to the total transient absorption obtained as the difference in absorption during and after irradiation. The effect of RA shows up as a decrease of absorption after switching on the ion beam. The TA provides a means for selective electronic excitation by a laser during implantation of silica glass. The precipitation of Cu atoms and the growth of Cu nanoparticles are well distinguishable stages of nanoparticle formation. The SPR peak appears at a fluence of 3.3 x 10 16 ions/cm 2 , corresponding to the onset of precipitation. At fluences higher than 3.4 x 10 16 ions/cm 2 , when the growth of nanoparticles predominates, the fluence dependence of the SPR peak is linear

Characterization of biodegradable polymers irradiated with swift heavy ions

International Nuclear Information System (INIS)

Salguero, N.G.; Grosso, M.F. del; Durán, H.; Peruzzo, P.J.; Amalvy, J.I.

2012-01-01

In view of their application as biomaterials, there is an increasing interest in developing new methods to induce controlled cell adhesion onto polymeric materials. The critical step in all these methods involves the modification of polymer surfaces, to induce cell adhesion, without changing theirs degradation and biocompatibility properties. In this work two biodegradable polymers, polyhydroxybutyrate (PHB) and poly-L-lactide acid (PLLA) were irradiated using carbon and sulfur beams with different energies and fluences. Pristine and irradiated samples were degradated by immersion in a phosphate buffer at pH 7.0 and then characterized. The analysis after irradiation and degradation showed a decrease in the contact angle values and changes in their crystallinity properties.

Characterization of biodegradable polymers irradiated with swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

Salguero, N.G. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499 (B1650KNA) San Martin, Buenos Aires (Argentina); Grosso, M.F. del, E-mail: delgrosso@tandar.cnea.gov.ar [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499 (B1650KNA) San Martin, Buenos Aires (Argentina); CONICET, Av. Rivadavia 1917 C1033AAJ CABA (Argentina); Duran, H. [CONICET, Av. Rivadavia 1917 C1033AAJ CABA (Argentina); Gerencia de Desarrollo Tecnologico y Proyectos Especiales, CNEA, Av. Gral. Paz 1499 (B1650KNA) San Mart Latin-Small-Letter-Dotless-I Acute-Accent n, Buenos Aires (Argentina); Escuela de Ciencia y Tecnologia, H. Yrigoyen 3100, CP 1650, San Martin, UNSAM (Argentina); Peruzzo, P.J. [CICPBA - Grupo de Materiales y Nanomateriales Polimericos, Instituto de Investigaciones Fisicoquimicas Teoricas y Aplicadas (INIFTA), CCT La Plata CONICET - Universidad Nacional de La Plata, La Plata (Argentina); Amalvy, J.I. [CICPBA - Grupo de Materiales y Nanomateriales Polimericos, Instituto de Investigaciones Fisicoquimicas Teoricas y Aplicadas (INIFTA), CCT La Plata CONICET - Universidad Nacional de La Plata, La Plata (Argentina); Facultad de Ingenieria, Universidad Nacional de La Plata, Calle 116 y 48 (B1900TAG), La Plata (Argentina); Departamento de Ingenieria Quimica, Facultad Regional La Plata, Universidad Tecnologica Nacional, 60 y 124 (1900), La Plata (Argentina); and others

2012-02-15

In view of their application as biomaterials, there is an increasing interest in developing new methods to induce controlled cell adhesion onto polymeric materials. The critical step in all these methods involves the modification of polymer surfaces, to induce cell adhesion, without changing theirs degradation and biocompatibility properties. In this work two biodegradable polymers, polyhydroxybutyrate (PHB) and poly-L-lactide acid (PLLA) were irradiated using carbon and sulfur beams with different energies and fluences. Pristine and irradiated samples were degradated by immersion in a phosphate buffer at pH 7.0 and then characterized. The analysis after irradiation and degradation showed a decrease in the contact angle values and changes in their crystallinity properties.

Heavy ion therapy: Bevalac epoch

International Nuclear Information System (INIS)

Castro, J.R.

1993-10-01

An overview of heavy ion therapy at the Bevelac complex (SuperHILac linear accelerator + Bevatron) is given. Treatment planning, clinical results with helium ions on the skull base and uveal melanoma, clinical results with high-LET charged particles, neon radiotherapy of prostate cancer, heavy charged particle irradiation for unfavorable soft tissue sarcoma, preliminary results in heavy charged particle irradiation of bone sarcoma, and irradiation of bile duct carcinoma with charged particles and-or photons are all covered

Heritable non-lethal damage to cultured human cells irradiated with heavy ions

International Nuclear Information System (INIS)

Walker, J.T.; Walker, O.A.

2002-01-01

During interplanetary flights the nuclei of all of a crew member's cells could be traversed by at least one high-LET (linear energy transfer) cosmic-ray particle. In mammalian cells irradiated in vitro about 1 in 10,000 of the surviving cells traversed by heavy particles is transformed to malignancy or mutated. What, if anything, happens to the remaining >99% of surviving cells? A retrospective analysis of archived data and samples from heavy-ion irradiation experiments with cultured human cells in vitro indicated that heavy ions caused a dose- and LET-dependent reduction in growth rates of progeny of irradiated cells, based on colony-size distributions. The maximum action cross section for this effect is between 100 and 300 μm 2 , at least as large as the cell nuclear area and up to 3 times the cross section for cell killing. Thus, heritable slow growth is the most prevalent effect of high-LET radiations on cultured animal cells, which may have implications for crew health during deep space travel. (author)

Electron excitation relaxation in wide-gap single crystal insulators under swift heavy-ion irradiation

International Nuclear Information System (INIS)

Yavlinskii, Yu.N.

2000-01-01

A heavy, multicharged ion moving in a solid interacts with nuclei and electrons of the matter atoms. If the projectile velocity exceeds the typical orbital velocity of the target electrons, the main process is excitation of the electronic subsystem, i.e., excitation and ionization of bound electrons. Initially, relaxation of the electron excitations results from electronic processes alone, and energy transfer from electrons to lattice happens later. Since free charge carriers are absent in insulators before irradiation, the motion of the excited electrons is possible only together with holes. Due to inner pressure of the electron-hole plasma the expansion takes place. The velocity of the expansion is determined by the heat velocity of electron-hole pairs. As the excitation region expands, the density of the electron-hole pairs decreases, the average distance between pairs increases, and excitons are produced. The expansion can be terminated in the time t≅10 -13 s, when, due to the electron-phonon interaction, self-trapped holes (and excitons) are formed. The annihilation of the trapped excitons gives rise to Frenkel defects. The set of equations comprising the continuity equation, the Euler equation and energy conservation is considered. The analytic dependence on time of the electron temperature and the radius of the excitation region is derived. The observation of projectile traces in a target is discussed in the single projectile regime

GXRD study of 100 MeV Fe9+ ion irradiated indium phosphide

International Nuclear Information System (INIS)

Dubey, R.L.; Dubey, S.K.; Kachhap, N.K.; Kanjilal, D.

2014-01-01

Swift heavy ions with MeV to GeV kinetic energy offer unique possibilities of modifying material properties. Each projectile passing through the target material causes loss of its energy by ion-electrons and ion-atoms interaction with the target material. The consequence of formal one is to change in surface properties and latter to produces damage deep in the target material near the projected range of projectile. In the present work, indium phosphide samples were irradiated at 100 MeV 56 Fe 9+ ions with different fluences varying from 1x10 12 to 1x10 14 ions cm -2 using the 15UD Pelletron facilities at Inter University Accelerator Centre (IUAC), New Delhi. Grazing angle X-ray diffraction technique was used to investigate the structural properties of irradiated indium phosphide at different depths. The GXRD spectra of non-irradiated and irradiated samples were recorded at different grazing angle i.e 1°, 2°, 3°, 4° and 5° to get the structural information over the projected range. The detailed result will be presented and discussed in the conference. (author)

AFM studies on heavy ion irradiated YBCO single crystals

International Nuclear Information System (INIS)

Lakhani, Archana; Marhas, M.K.; Saravanan, P.; Ganesan, V.; Srinivasan, R.; Kanjilal, D.; Mehta, G.K.; Elizabeth, Suja; Bhat, H.L.

2000-01-01

Atomic Force Microscopy (AFM) is extensively used to characterise the surface morphology of high energy ion irradiated single crystals of high temperature superconductor - YBCO. Our earlier systematic studies on thin films of YBCO under high energy and heavy ion irradiation shows clear evidence of ion induced sputtering or erosion, even though the effect is more on the grain boundaries. These earlier results were supported by electrical resistance measurements. In order to understand more clearly, the nature of surface modification at these high energies, AFM studies were carried out on single crystals of YBCO. Single crystals were chosen in order to see the effect on crystallites alone without interference from grain boundaries. 200 MeV gold ions were used for investigation using the facilities available at Nuclear Science Centre, New Delhi. The type of ion and the range of energies were chosen to meet the threshold for electronically mediated defect production. The results are in conformity with our earlier studies and will be described in detail in the context of electronic energy loss mediated sputtering or erosion. (author)

Linear Energy Transfer-Dependent Change in Rice Gene Expression Profile after Heavy-Ion Beam Irradiation.

Science.gov (United States)

Ishii, Kotaro; Kazama, Yusuke; Morita, Ryouhei; Hirano, Tomonari; Ikeda, Tokihiro; Usuda, Sachiko; Hayashi, Yoriko; Ohbu, Sumie; Motoyama, Ritsuko; Nagamura, Yoshiaki; Abe, Tomoko

2016-01-01

A heavy-ion beam has been recognized as an effective mutagen for plant breeding and applied to the many kinds of crops including rice. In contrast with X-ray or γ-ray, the heavy-ion beam is characterized by a high linear energy transfer (LET). LET is an important factor affecting several aspects of the irradiation effect, e.g. cell survival and mutation frequency, making the heavy-ion beam an effective mutagen. To study the mechanisms behind LET-dependent effects, expression profiling was performed after heavy-ion beam irradiation of imbibed rice seeds. Array-based experiments at three time points (0.5, 1, 2 h after the irradiation) revealed that the number of up- or down-regulated genes was highest 2 h after irradiation. Array-based experiments with four different LETs at 2 h after irradiation identified LET-independent regulated genes that were up/down-regulated regardless of the value of LET; LET-dependent regulated genes, whose expression level increased with the rise of LET value, were also identified. Gene ontology (GO) analysis of LET-independent up-regulated genes showed that some GO terms were commonly enriched, both 2 hours and 3 weeks after irradiation. GO terms enriched in LET-dependent regulated genes implied that some factor regulates genes that have kinase activity or DNA-binding activity in cooperation with the ATM gene. Of the LET-dependent up-regulated genes, OsPARP3 and OsPCNA were identified, which are involved in DNA repair pathways. This indicates that the Ku-independent alternative non-homologous end-joining pathway may contribute to repairing complex DNA legions induced by high-LET irradiation. These findings may clarify various LET-dependent responses in rice.

Thermo-luminescence and photoluminescence studies of Al2O3 irradiated with heavy ions

International Nuclear Information System (INIS)

Jheeta, K.S.

2008-06-01

Thermo-luminescence (TL) spectra of single crystals of Al 2 O 3 (sapphire) irradiated with 200 MeV swift Ag ions at different fluence in the range 1x10 11 to 1x10 13 ions/cm 2 has been recorded at room temperature by keeping the warming rate 2K/min. The TL glow curve of the irradiated samples has a simple structure with a prominent peak at ∼ 500 K with one small peak at 650 K. The intensity of main peak increases with the ion fluence. This has been attributed to the creation of new traps on irradiation. Also, a shift of 8 K in the peak position towards low temperature side has been observed at higher fluence 1x10 13 ions/cm 2 . In addition, photoluminescence (PL) spectra of irradiated samples have been recorded at room temperature upon 2.8 eV excitation. A broad band consisting of mainly two emission bands, respectively at 2.5 and 2.3 eV corresponding to F 2 and F 2 2+ defect centers is observed. The intensity of these bands shows an increasing trend up to fluence 5x10 12 ions/cm 2 and then decreases at higher fluence 1x10 13 ions/cm 2 . The results are interpreted in terms of creation of newly defect centers, clustering/aggregation and radiation-induced annihilation of defects. (author)

Swift heavy ion irradiation induced modification of structure

Indian Academy of Sciences (India)

AFM analysis indicated that the pristine film consists of agglomerated grains with diffuse grain boundary. Irradiation led to reduced agglomeration of the grains with the formation of sharper grain boundaries. The rms roughness (rms) estimated from AFM analysis increased from 6.2 in pristine film to 12.7 nm when the film ...

Fabrication of planar waveguide in KNSBN crystal by swift heavy ion beam irradiation

International Nuclear Information System (INIS)

Guan, Jing; Wang, Lei; Qin, Xifeng

2013-01-01

We report on the fabrication of the planar waveguides in the KNSBN crystal by using 17 MeV C 5+ ions at a fluence of 2 × 10 14 ions/cm 2 . After implantation, near surface regions of the crystal, there has a positive extraordinary refractive index (n e ) change and the light inside the waveguides can propagate in a non-leaky manner. The two-dimensional modal profiles of the planar waveguides, measured by using the end-coupling arrangement, are in good agreement with the reconstructed modal distributions. The propagation loss for C 5+ irradiated waveguide is ∼0.8 dB/cm at 633 nm and ∼0.72 dB/cm at 1064 nm. The waveguide gives good confinement of waveguide modes, which exhibits acceptable guiding qualities for potential applications in integrated optics

Fabrication of planar waveguide in KNSBN crystal by swift heavy ion beam irradiation

Science.gov (United States)

Guan, Jing; Wang, Lei; Qin, Xifeng

2013-11-01

We report on the fabrication of the planar waveguides in the KNSBN crystal by using 17 MeV C5+ ions at a fluence of 2 × 1014 ions/cm2. After implantation, near surface regions of the crystal, there has a positive extraordinary refractive index (ne) change and the light inside the waveguides can propagate in a non-leaky manner. The two-dimensional modal profiles of the planar waveguides, measured by using the end-coupling arrangement, are in good agreement with the reconstructed modal distributions. The propagation loss for C5+ irradiated waveguide is ∼0.8 dB/cm at 633 nm and ∼0.72 dB/cm at 1064 nm. The waveguide gives good confinement of waveguide modes, which exhibits acceptable guiding qualities for potential applications in integrated optics.

Heavy ion induced mutation in arabidopsis

Energy Technology Data Exchange (ETDEWEB)

Tano, Shigemitsu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

Heavy ions, He, C, Ar and Ne were irradiated to the seeds of Arabidopsis thaliana for inducing the new mutants. In the irradiated generation (M{sub 1}), germination and survival rate were observed to estimate the relative biological effectiveness in relation to the LET including the inactivation cross section. Mutation frequencies were compared by using three kinds of genetic loci after irradiation with C ions and electrons. Several interesting new mutants were selected in the selfed progenies of heavy ion irradiated seeds. (author)

The thermal-spike model description of the ion-irradiated polyimide

International Nuclear Information System (INIS)

Sun Youmei; Zhang Chonghong; Zhu Zhiyong; Wang Zhiguang; Jin Yunfan; Liu Jie; Wang Ying

2004-01-01

To describe the role of electronic energy loss (dE/dX) e for chemical modification of polyimide (PI), multi-layer stacks (corresponding to different dE/dX) were irradiated by different swift heavy ions (1.158 GeV Fe 56 and 1.755 GeV Xe 136 ) under vacuum and at room temperature. Chemical changes of modified PI films were studied by Fourier transform infrared (FTIR) spectroscopy. The chain disruption rate of PI was investigated in the fluence range from 1 x 10 11 to 6 x 10 12 ions/cm 2 and a wider energy stopping power range (2.2-5.1 keV/nm for Fe 56 ions and 8.6-11.5 keV/nm for Xe 136 ions). Alkyne formation was observed over the electronic energy loss range of interest. By applying the saturated track model assumption (the damage process only occur in a cylinder of area σ), the mean degradation and alkyne formation radii in tracks were induced for Fe and Xe ion irradiation, respectively. The results were validated by the thermal-spike model. The analysis of the irradiated PI films shows that the predictions of the thermal-spike model of Szenes are in qualitative agreement with the curve shape of experimental results

Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

Science.gov (United States)

Jaiswal, Manoj Kumar; Kanjilal, D.; Kumar, Rajesh

2013-11-01

Thin films of tin(IV) oxide (SnO2) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au8+ using 1 pnA current at normal incidence with ion fluences varying from 1 × 1011 ions/cm2 to 5 × 1013 ions/cm2. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV-Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm-1 in FTIR spectrum confirmed the O-Sn-O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO2 were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

Effect of heavy ion irradiation on thermodynamically equilibrium Zr-Excel alloy

Science.gov (United States)

Yu, Hongbing; Liang, Jianlie; Yao, Zhongwen; Kirk, Mark A.; Daymond, Mark R.

2017-05-01

The thermodynamically equilibrium state was achieved in a Zr-Sn-Nb-Mo alloy by long-term annealing at an intermediate temperature. The fcc intermetallic Zr(Mo, Nb)2 enriched with Fe was observed at the equilibrium state. In-situ 1 MeV Kr2+ heavy ion irradiation was performed in a TEM to study the stability of the intermetallic particles under irradiation and the effects of the intermetallic particle on the evolution of type dislocation loops at different temperatures from 80 to 550 °C. Chemi-STEM elemental maps were made at the same particles before and after irradiation up to 10 dpa. It was found that no elemental redistribution occurs at 200 °C and below. Selective depletion of Fe was observed from some precipitates under irradiation at higher temperatures. No change in the morphology of particles and no evidence showing a crystalline to amorphous transformation were observed at all irradiation temperatures. The formation of type dislocation loops was observed under irradiation at 80 and 200 °C, but not at 450 and 550 °C. The loops were non-uniformly distributed; a localized high density of type dislocation loops were observed near the second phase particles; we suggest that loop nucleation is favored as a result of the stress induced by the particles, rather than by elemental redistribution. The stability of the second phase particles and the formation of the type loops under heavy ion irradiation are discussed.

Linear Energy Transfer-Dependent Change in Rice Gene Expression Profile after Heavy-Ion Beam Irradiation.

Directory of Open Access Journals (Sweden)

Kotaro Ishii

Full Text Available A heavy-ion beam has been recognized as an effective mutagen for plant breeding and applied to the many kinds of crops including rice. In contrast with X-ray or γ-ray, the heavy-ion beam is characterized by a high linear energy transfer (LET. LET is an important factor affecting several aspects of the irradiation effect, e.g. cell survival and mutation frequency, making the heavy-ion beam an effective mutagen. To study the mechanisms behind LET-dependent effects, expression profiling was performed after heavy-ion beam irradiation of imbibed rice seeds. Array-based experiments at three time points (0.5, 1, 2 h after the irradiation revealed that the number of up- or down-regulated genes was highest 2 h after irradiation. Array-based experiments with four different LETs at 2 h after irradiation identified LET-independent regulated genes that were up/down-regulated regardless of the value of LET; LET-dependent regulated genes, whose expression level increased with the rise of LET value, were also identified. Gene ontology (GO analysis of LET-independent up-regulated genes showed that some GO terms were commonly enriched, both 2 hours and 3 weeks after irradiation. GO terms enriched in LET-dependent regulated genes implied that some factor regulates genes that have kinase activity or DNA-binding activity in cooperation with the ATM gene. Of the LET-dependent up-regulated genes, OsPARP3 and OsPCNA were identified, which are involved in DNA repair pathways. This indicates that the Ku-independent alternative non-homologous end-joining pathway may contribute to repairing complex DNA legions induced by high-LET irradiation. These findings may clarify various LET-dependent responses in rice.

Elastic wave from fast heavy ion irradiation on solids

CERN Document Server

Kambara, T; Kanai, Y; Kojima, T M; Nanai, Y; Yoneda, A; Yamazaki, Y

2002-01-01

To study the time-dependent mechanical effects of fast heavy ion irradiations, we have irradiated various solids by a short-bunch beam of 95 MeV/u Ar ions and observed elastic waves generated in the bulk. The irradiated targets were square-shaped plates of poly-crystals of metals (Al and Cu), invar alloy, ceramic (Al sub 2 O sub 3), fused silica (SiO sub 2) and single crystals of KC1 and LiF with a thickness of 10 mm. The beam was incident perpendicular to the surface and all ions were stopped in the target. Two piezo-electric ultrasonic sensors were attached to the surface of the target and detected the elastic waves. The elastic waveforms as well as the time structure and intensity of the beam bunch were recorded for each shot of a beam bunch. The sensor placed opposite to the beam spot recorded a clear waveform of the longitudinal wave across the material, except for the invar and fused silica targets. From its propagation time along with the sound velocity and the thickness of the target, the depth of the...

Chromosomal aberrations of the Chinese hamster cell line V79 after irradiation with X-rays and heavy ions

International Nuclear Information System (INIS)

Mueller, W.

1985-02-01

The study on hand examines chromosomal aberrations in Chinese hamster 79 cells. Irradiation involved a number of heavy ions ranging from neon to uranium with an energy variation between 0.3 and 20 MeV/u. Linear energy transfer ranged from 270 to 16,300 keV/μm. X-ray tests were run for reasons of comparison. Experiments showed the following results: 1) Aberration rate increases in dependence of nuclear charge number or LET resp. 2) The distribution of the chromosome-damage instances found differed markedly from corresponding measurements following irradiation with thinly ionizing radiation. In contrast to x-irradiation, it is possible, therefore, to obtain high aberration yields in preparations made immediately after irradiation. 3) The maximum of aberration yield after heavy-ion irradiation could be shown to occur as early as 4h after irradiation. This is true in x-irradiation for but small doses. 4) The radiation-sensitizing effect of caffeine and its action on the repair system of the cell could be confirmed for x-irradiation and could be described for heavy ions for the first time. 5) The radiation-protection effect of cysteamine could be re-affirmed for thinly ionizing radiation, however, it could not be verified for heavy ions. 6) Irradiation of cells by means of particles of a defined range supports the hypothesis that the particularly radiation-sensitive regions of the nucleus membrane constitute the cell's crucial target. (orig./MG) [de

Temporally distinct response of irradiated normal human fibroblasts and their bystander cells to energetic heavy ions

International Nuclear Information System (INIS)

Hamada, Nobuyuki; Ni, Meinan; Funayama, Tomoo; Sakashita, Tetsuya; Kobayashi, Yasuhiko

2008-01-01

Ionizing radiation-induced bystander effects have been documented for a multitude of endpoints such as mutations, chromosome aberrations and cell death, which arise in nonirradiated bystander cells having received signals from directly irradiated cells; however, energetic heavy ion-induced bystander response is incompletely characterized. To address this, we employed precise microbeams of carbon and neon ions for targeting only a very small fraction of cells in confluent fibroblast cultures. Conventional broadfield irradiation was conducted in parallel to see the effects in irradiated cells. Exposure of 0.00026% of cells led to nearly 10% reductions in the clonogenic survival and twofold rises in the apoptotic incidence regardless of ion species. Whilst apoptotic frequency increased with time up to 72 h postirradiation in irradiated cells, its frequency escalated up to 24 h postirradiation but declined at 48 h postirradiation in bystander cells, indicating that bystander cells exhibit transient commitment to apoptosis. Carbon- and neon-ion microbeam irradiation similarly caused almost twofold increments in the levels of serine 15-phosphorylated p53 proteins, irrespective of whether 0.00026, 0.0013 or 0.0066% of cells were targeted. Whereas the levels of phosphorylated p53 were elevated and remained unchanged at 2 h and 6 h postirradiation in irradiated cells, its levels rose at 6 h postirradiation but not at 2 h postirradiation in bystander cells, suggesting that bystander cells manifest delayed p53 phosphorylation. Collectively, our results indicate that heavy ions inactivate clonogenic potential of bystander cells, and that the time course of the response to heavy ions differs between irradiated and bystander cells. These induced bystander responses could be a defensive mechanism that minimizes further expansion of aberrant cells

Selective binding of oligonucleotide on TiO2 surfaces modified by swift heavy ion beam lithography

International Nuclear Information System (INIS)

Vicente Pérez-Girón, J.; Hirtz, M.; McAtamney, C.; Bell, A.P.; Antonio Mas, J.; Jaafar, M.; Luis, O. de; Fuchs, H.

2014-01-01

We have used swift heavy-ion beam based lithography to create patterned bio-functional surfaces on rutile TiO 2 single crystals. The applied lithography method generates a permanent and well defined periodic structure of micrometre sized square holes having nanostructured TiO 2 surfaces, presenting different physical and chemical properties compared to the surrounding rutile single crystal surface. On the patterned substrates selective binding of oligonucleotides molecules is possible at the surfaces of the holes. This immobilisation process is only being controlled by UV light exposure. The patterned transparent substrates are compatible with fluorescence detection techniques, are mechanically robust, have a high tolerance to extreme chemical and temperature environments, and apparently do not degrade after ten cycles of use. These qualities make the patterned TiO 2 substrates useful for potential biosensor applications

Effects of heavy-ion irradiation on the vortex state in Ba(Fe1-xCox)2As2

International Nuclear Information System (INIS)

Tamegai, T.; Tsuchiya, Y.; Taen, T.; Nakajima, Y.; Okayasu, S.; Sasase, M.

2010-01-01

We report effects of heavy-ion irradiation in Ba(Fe 1-x Co x ) 2 As 2 single crystals. The columnar defects with about 40% of the irradiation dose are confirmed by transmission electron microscopy. Magneto-optical imaging and bulk magnetization measurements reveal strong enhancement of the critical current density in the irradiated region. The vortex creep rate is also strongly suppressed by the columnar defects. Effects of heavy-ion irradiation into Ba(Fe 1-x Co x ) 2 As 2 and cuprate superconductors are compared.

Swift heavy ion irradiated SnO{sub 2} thin film sensor for efficient detection of SO{sub 2} gas

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Punit; Sharma, Savita [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Department of Physics, Miranda House, University of Delhi, Delhi 110007 (India); Singh, Fouran [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2016-07-15

Highlights: • Response of Ni{sup 7+} ion irradiated (100 MeV) SnO{sub 2} film have been performed. • Effect of irradiation on the structural and optical properties of SnO{sub 2} film is studied. • A decrease in operating temperature and increased response is seen after irradiation. - Abstract: Gas sensing response studies of the Ni{sup 7+} ion irradiated (100 MeV) and non-irradiated SnO{sub 2} thin film sensor prepared under same conditions have been performed towards SO{sub 2} gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO{sub 2} thin film based sensor have been studied. A significant decrease in operating temperature (from 220 °C to 60 °C) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO{sub 2} thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO{sub 2} thin film by Ni{sup 7+} ions.

Results of heavy ion radiotherapy

International Nuclear Information System (INIS)

Castro, J.R.

1994-04-01

The potential of heavy ion therapy for clinical use in cancer therapy stems from the biological parameters of heavy charged particles, and their precise dose localization. Biologically, carbon, neon and other heavy ion beams (up to about silicon) are clinically useful in overcoming the radioresistance of hypoxic tumors, thus increasing biological effectiveness relative to low-LET x-ray or electron beams. Cells irradiated by heavy ions show less variation in cell-cycle related radiosensitivity and decreased repair of radiation injury. The physical parameters of these heavy charged particles allow precise delivery of high radiation doses to tumors while minimizing irradiation of normal tissues. Clinical use requires close interaction between radiation oncologists, medical physicists, accelerator physicists, engineers, computer scientists and radiation biologists

A correlation between micro- and nano-indentation on materials irradiated by high-energy heavy ions

Science.gov (United States)

Yang, Yitao; Zhang, Chonghong; Ding, Zhaonan; Su, Changhao; Yan, Tingxing; Song, Yin; Cheng, Yuguang

2018-01-01

Hardness testing is an efficient means of assessing the mechanical properties of materials due to the small sampling volume requirement. Previous studies have established the correlation between flow stress and Vickers hardness. However, the damage layer produced by ions irradiation with low energy is too thin to perform Vickers hardness test, which is usually measured by nano-indentation. Therefore, it is necessary to correlate the Vickers hardness and nano-hardness for the convenience of assessing mechanical properties of materials under irradiation. In this study, various materials (pure nickel, nickel base alloys and oxide dispersion strengthened steel) were irradiated with high-energy heavy ions to different damage levels. After irradiation, micro- and nano-indentation were performed to characterize the change in hardness. Due to indentation size effect (ISE), the hardness was dependent of load or depth. Therefore, Nix-Gao model was used to obtain the hardness without ISE (Hv0 and Hnano_0). The determined Hv0 was plotted as a function of the corresponding Hnano_0, then a good linear relation was found between Vickers hardness and nano-hardness, and a coefficient was determined to be 81.0 ± 10.5, namely, Hv 0 = 81.0Hnano _ 0 (Hv0 with unit of kgf/mm2, Hnano_0 with unit of GPa). This correlation was based on the data from various materials, therefore it was independent of materials. Based on the established correlation and nano-indentation results, the change fraction in yield stress of Inconel 718 and pure Ni with ion irradiation was compared with that with neutron irradiation. The data of Inconel 718 with heavy ion irradiation was in good agreement with the data with neutron irradiation, which was a good demonstration for the validation of the established correlation. However, a distinctive difference in change fraction of yield stress was seen for pure Ni under heavy ion irradiation and neutron irradiation, which was attributed to the difference in samples

Effect of heavy ion irradiation on thermodynamically equilibrium Zr-Excel alloy

Energy Technology Data Exchange (ETDEWEB)

Yu, Hongbing [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada); Liang, Jianlie [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada); College of Science, Guangxi University for Nationalities, 188, East Da Xue Rd., Nanning, Guangxi, 530006 P.R.C (China); Yao, Zhongwen, E-mail: yaoz@queensu.ca [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada); Kirk, Mark A. [Material Science Division Argonne National Laboratory, Argonne, IL 60439 (United States); Daymond, Mark R., E-mail: mark.daymond@queensu.ca [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada)

2017-05-15

The thermodynamically equilibrium state was achieved in a Zr-Sn-Nb-Mo alloy by long-term annealing at an intermediate temperature. The fcc intermetallic Zr(Mo, Nb){sub 2} enriched with Fe was observed at the equilibrium state. In-situ 1 MeV Kr{sup 2+} heavy ion irradiation was performed in a TEM to study the stability of the intermetallic particles under irradiation and the effects of the intermetallic particle on the evolution of type dislocation loops at different temperatures from 80 to 550 °C. Chemi-STEM elemental maps were made at the same particles before and after irradiation up to 10 dpa. It was found that no elemental redistribution occurs at 200 °C and below. Selective depletion of Fe was observed from some precipitates under irradiation at higher temperatures. No change in the morphology of particles and no evidence showing a crystalline to amorphous transformation were observed at all irradiation temperatures. The formation of type dislocation loops was observed under irradiation at 80 and 200 °C, but not at 450 and 550 °C. The loops were non-uniformly distributed; a localized high density of type dislocation loops were observed near the second phase particles; we suggest that loop nucleation is favored as a result of the stress induced by the particles, rather than by elemental redistribution. The stability of the second phase particles and the formation of the type loops under heavy ion irradiation are discussed.

Modifications induced by swift heavy ions on poly(hydroxybutyrate-hydroxyvalerate) (PHB/HV) and poly(ε-caprolactone) (PCL). Part 2. Radicals characterization

International Nuclear Information System (INIS)

Rouxhet, L.; Mestdagh, M.; Legras, R.

2000-01-01

Modifications induced by different energetic heavy ions ( 40 Ar 9+ , 80 Kr 15+ , 129 Xe 24+ , 208 Pb 53+ and 208 Pb 56+ ) on poly(ε-caprolactone) (PCL) and poly(hydroxybutyrate-hydroxyvalerate) (PHB/HV) have been investigated by electron spin resonance (ESR). Indeed, film irradiation by heavy ions leads to, among other phenomena, the formation of radicals in the ion tracks. Thanks to ESR, it is possible to detect these radicals and to identify them or at least to characterize them by following the evolution of the radical signal as a function of parameters, like temperature, or the kinetic of disappearance of the radical species at ambient temperature in vacuum or ambient atmosphere. This study confirmed the generation of radicals by the irradiation of PHB/HV samples with energetic heavy ions reported in the literature. The study on PCL was not pursued after a few preliminary studies, revealing the presence of an ESR signal in the non-irradiated sample. Electronic stopping power has a major influence on radical decrease at ambient temperature. The ion used for the irradiation did not modify very much the radical signal and the evolution of the radicalar signal intensity with temperature. Different reasoning and experiments revealed that the glass transition temperature is a key temperature above which irreversible recombinations of the most stable radicals take place. A simulation study indicated that the most stable radical produced was probably a tertiary radical formed by the stabilization of the secondary radical resulting from the abstraction of a highly mobile hydrogen adjacent to the carbonyl

Structure of heavy-ion tracks in zircon

International Nuclear Information System (INIS)

Braunshausen, G.; Bursill, L.A.; Vetter, J.; Spohr, R.

1990-01-01

Gem quality zirconas (ZrSiO 4 ) were irradiated with 14MeV/u Pb ions. Observations of heavy-ion tracks confirmed that fission or heavy-ion irradiation damage is confined to a 50-100 Aangstroem core region, which has undergone a crystalline-glass phase transition. 3 refs., 3 figs

Development and performance evaluation of a three-dimensional clinostat synchronized heavy-ion irradiation system

Science.gov (United States)

Ikeda, Hiroko; Souda, Hikaru; Puspitasari, Anggraeini; Held, Kathryn D.; Hidema, Jun; Nikawa, Takeshi; Yoshida, Yukari; Kanai, Tatsuaki; Takahashi, Akihisa

2017-02-01

Outer space is an environment characterized by microgravity and space radiation, including high-energy charged particles. Astronauts are constantly exposed to both microgravity and radiation during long-term stays in space. However, many aspects of the biological effects of combined microgravity and space radiation remain unclear. We developed a new three-dimensional (3D) clinostat synchronized heavy-ion irradiation system for use in ground-based studies of the combined exposures. Our new system uses a particle accelerator and a respiratory gating system from heavy-ion radiotherapy to irradiate samples being rotated in the 3D clinostat with carbon-ion beams only when the samples are in the horizontal position. A Peltier module and special sample holder were loaded on a static stage (standing condition) and the 3D clinostat (rotation condition) to maintain a suitable temperature under atmospheric conditions. The performance of the new device was investigated with normal human fibroblasts 1BR-hTERT in a disposable closed cell culture chamber. Live imaging revealed that cellular adhesion and growth were almost the same for the standing control sample and rotation sample over 48 h. Dose flatness and symmetry were judged according to the relative density of Gafchromic films along the X-axis and Y-axis of the positions of the irradiated sample to confirm irradiation accuracy. Doses calculated using the carbon-ion calibration curve were almost the same for standing and rotation conditions, with the difference being less than 5% at 1 Gy carbon-ion irradiation. Our new device can accurately synchronize carbon-ion irradiation and simulated microgravity while maintaining the temperature under atmospheric conditions at ground level.

Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

Energy Technology Data Exchange (ETDEWEB)

Jaiswal, Manoj Kumar [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Kumar, Rajesh, E-mail: rajeshkumaripu@gmail.com [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India)

2013-11-01

Thin films of tin(IV) oxide (SnO{sub 2}) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au{sup 8+} using 1 pnA current at normal incidence with ion fluences varying from 1 × 10{sup 11} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2}. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV–Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm{sup −1} in FTIR spectrum confirmed the O–Sn–O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO{sub 2} were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

Physics design of heavy-ion irradiation beam line on HI-13 tandem accelerator

International Nuclear Information System (INIS)

Zhu Fei; Peng Zhaohua; Hu Yueming; Jiao Xuesheng; Chen Dongfeng; Cao Yali

2014-01-01

Background: Heavy-ion microporous membrane is a new kind of filter material, which has prosperous application in the fields of medical and biological agents, electronic, food, environmental science, materials science, etc. Purpose: Polyester membranes were irradiated with 32 S produced by HI-13 tandem accelerator to develop a microporous membrane at CIAE, and the irradiation uniformity is determined by the beam distribution, also the microporous uniformity is required higher than 90%. Methods: An octupole magnet was used to correct the beam distribution from Gauss to uniform. Meanwhile, main parameters of beam line were given, and the alignment tolerances for optical elements were also analyzed. Results: Alignment tolerance of the optical elements could cause great influence on the beam center deviation in the process of correction, which would destroy the irradiation uniformity. Steering magnet was applied to meet with the design requirements. Conclusion: This study provides a practical and feasible way for industrial production of heavy-ion microporous membrane. (authors)

Simulation study of radial dose due to the irradiation of a swift heavy ion aiming to advance the treatment planning system for heavy particle cancer therapy: The effect of emission angles of secondary electrons

Energy Technology Data Exchange (ETDEWEB)

Moribayashi, Kengo, E-mail: moribayashi.kengo@jaea.go.jp

2015-12-15

A radial dose simulation model has been proposed in order to advance the treatment planning system for heavy particle cancer therapy. Here, the radial dose is the dose due to the irradiation of a heavy ion as a function of distances from this ion path. The model proposed here may overcome weak points of paradigms that are employed to produce the conventional radial dose distributions. To provide the radial dose with higher accuracy, this paper has discussed the relationship between the emission angles of secondary electrons and the radial dose. It is found that the effect of emission angles becomes stronger on the radial dose with increasing energies of the secondary electrons.

Quantitative approach to relate dielectric constant studies with TSDC studies of 50 MeV Si ion irradiated kapton-H polymide

International Nuclear Information System (INIS)

Quamara, J.K.; Garg, Maneesha; Sridharbabu, Y.; Prabhavathi, T.

2003-01-01

Temperature and frequency dependent dielectric behaviour has been investigated for pristine and swift heavy ion irradiated (Si ion, 50 MeV energy) kapton-H polyimide in the temperature range of 30 to 250 deg C at frequencies 120 Hz, 1 kHz, 10 kHz and 100 kHz respectively. The dielectric relaxation behaviour of the same samples was also studied using thermally stimulated discharge current (TSDC) technique. A quantitative approach is developed using a well-known Clausius Mossotti equation to relate the TSDC findings to the dielectric constant studies. An overall increase in the dielectric constant of the irradiated samples are also in conformity to the TSDC findings. (author)

50 MeV, Li"3"+ - ion irradiation effect on magnetic ordering of Y"3"+ - substituted yttrium iron garnet

International Nuclear Information System (INIS)

Sharma, P. U.; Zankat, K. B.; Dolia, S. N.; Modi, K. B.

2016-01-01

This communication presents the effect of non-magnetic Y"3"+ ions substitution for magnetic Fe"3"+ ions and 50 MeV, Li"3"+ ion irradiation (fluence: 5 × 10"1"3 ions/cm"2) on magnetic ordering and Neel temperature of Y_3_+_xFe_5_-_xO_1_2 (x = 0.0, 0.2, 0.4 and 0.6) garnet system, studied by means of X-ray powder diffractometry and thermal variation of low field (0.5 Oe) ac susceptibility measurements. The un-irradiated compositions exhibit normal ferrimagnetic behavior with decrease in transition temperature (T_N) on increasing Y"3"+-concentration (x). The irradiated counterparts are characterized by tailing effect indicative of non-uniform effect of irradiation and lower value of T_N. The results have been discussed based on the weakening of magnetic exchange interactions and cumulative effect of redistribution of cations and fractional creation of localized paramagnetic centers resulting from swift heavy ion irradiation. The Neel temperatures and exchange integrals have been calculated theoretically.

Effective mutagenesis of Arabidopsis by heavy ion beam-irradiation

International Nuclear Information System (INIS)

Yamamoto, Y.Y.; Saito, H.; Ryuto, H.; Fukunishi, N.; Yoshida, S.; Abe, T.

2005-01-01

Full text: Arabidopsis researches frequently include the genetic approach, so efficient, convenient, and safe methods for mutagenesis are required. Currently, the most popular method for in house mutagenesis is application of EMS. Although this method is very effective, its base substitution-type mutations often gives leaky mutants with residual gene functions, leading some difficulty in understanding the corresponding gene functions. Heavy ion beam generated by accelerators gives highest energy transfer rates among known radiation-based mutagenesis methods including X ray, gamma ray, fast neutron, electron and proton irradiation. This feature is thought to give high frequency of the double strand break of genomic DNA and resultant short deletions, resulting frame shift-type mutations. At RIKEN Accelerator Research Facility (RARF, http://www.rarf.riken.go.jp/index-e.html), we have optimized conditions for effective mutagenesis of Arabidopsis regarding to ion species and irradiation dose, and achieved comparable mutation rates to the method with EMS. (author)

Evidence of amorphous interdiffusion layer in heavy ion irradiated U–8wt%Mo/Al interfaces

Energy Technology Data Exchange (ETDEWEB)

Chiang, H-Y. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany); Zweifel, T. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany); CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Palancher, H., E-mail: herve.palancher@cea.fr [CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Bonnin, A. [ESRF, 6 rue Jules Horowitz, 38042 Grenoble (France); Beck, L. [Tandembeschleuniger des Maier-Leibnitz-Labors (MLL), Am Coulombwall 6, D-85747 Garching (Germany); Weiser, P. [Walther Schottky Institut, Technische Universität München, Am Coulombwall 4, D-85747 Garching (Germany); Döblinger, M. [Department Chemie, Ludwig-Maximilians-Universität München (LMU), Butenandstr. 11, D-81377 München (Germany); Sabathier, C. [CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Jungwirth, R.; Petry, W. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany)

2013-09-15

U–Mo/Al based nuclear fuels are worldwide considered as the most promising high density fuel for the conversion of high flux research and test reactors from highly enriched uranium to lower enrichment. However in-pile growth of an amorphous interdiffusion layer at the U–Mo/Al interfaces strongly limits the performances of this fuel. Several in-pile tests have been performed to optimize the composition. In this paper, a breakthrough in simulating the U–8wt%Mo/Al behavior under out-of-pile irradiation is reported. It is shown that an amorphous U–8wt%Mo/Al interdiffusion layer (IDL) is obtained by heavy ion irradiation ({sup 127}I) in a U–Mo/Al diffusion couple under controlled temperature conditions. The properties of this IDL coincide with the results obtained from in-pile tests. This methodological work clearly indicates that heavy ion irradiations could be routinely applied for optimizing composition of U–Mo/Al nuclear fuels. In other words these out-of-pile tests using ion beams could become a representative, efficient and economic step before in-pile irradiation.

Evidence of amorphous interdiffusion layer in heavy ion irradiated U–8wt%Mo/Al interfaces

International Nuclear Information System (INIS)

Chiang, H-Y.; Zweifel, T.; Palancher, H.; Bonnin, A.; Beck, L.; Weiser, P.; Döblinger, M.; Sabathier, C.; Jungwirth, R.; Petry, W.

2013-01-01

U–Mo/Al based nuclear fuels are worldwide considered as the most promising high density fuel for the conversion of high flux research and test reactors from highly enriched uranium to lower enrichment. However in-pile growth of an amorphous interdiffusion layer at the U–Mo/Al interfaces strongly limits the performances of this fuel. Several in-pile tests have been performed to optimize the composition. In this paper, a breakthrough in simulating the U–8wt%Mo/Al behavior under out-of-pile irradiation is reported. It is shown that an amorphous U–8wt%Mo/Al interdiffusion layer (IDL) is obtained by heavy ion irradiation ( 127 I) in a U–Mo/Al diffusion couple under controlled temperature conditions. The properties of this IDL coincide with the results obtained from in-pile tests. This methodological work clearly indicates that heavy ion irradiations could be routinely applied for optimizing composition of U–Mo/Al nuclear fuels. In other words these out-of-pile tests using ion beams could become a representative, efficient and economic step before in-pile irradiation

Separation and recovery of dioxins using a heavy ion irradiation film

Energy Technology Data Exchange (ETDEWEB)

Takahashi, S; Iida, S; Ohbayashi, Y [Meiji Univ., Kawasaki, Kanagawa (Japan). Faculty of Engineering

2004-02-01

It is demonstrated that halogenated dioxin and its derivatives can be separated from polluted aqueous solutions using pervaporation technique with a nanopore membrane fabricated by heavy-ion beam irradiation. The concentration of dioxin in the sample solution was set below 1 ppm. Polyethyleneterphthalate membrane was used. The membrane was first irradiated with high energy Xe-ions of 450 MeV with a fluence of 3 x 10{sup 3} to 3 x 10{sup 9} ions/cm{sup 2} using TIARA facility of JAERI Takasaki, etched with 6 mol/l NaOH solution resulting in formation of pores with diameter ranging from several to 40 nm, followed by grafting with monomers having affinity to dioxin. Dibenzo-p-dioxin was used to obtain permeability data. Separation factor obtained were within the range from 10 to 50. (S. Ohno)

Chlorine diffusion in uranium dioxide under heavy ion irradiation

International Nuclear Information System (INIS)

Pipon, Y.; Bererd, N.; Moncoffre, N.; Peaucelle, C.; Toulhoat, N.; Jaffrezic, H.; Raimbault, L.; Sainsot, P.; Carlot, G.

2007-01-01

The radiation enhanced diffusion of chlorine in UO 2 during heavy ion irradiation is studied. In order to simulate the behaviour of 36 Cl, present as an impurity in UO 2 , 37 Cl has been implanted into the samples (projected range 200 nm). The samples were then irradiated with 63.5 MeV 127 I at two fluxes and two temperatures and the chlorine distribution was analyzed by SIMS. The results show that, during irradiation, the diffusion of the implanted chlorine is enhanced and slightly athermal with respect to pure thermal diffusion. A chlorine gain of 10% accumulating near the surface has been observed at 510 K. This corresponds to the displacement of pristine chlorine from a region of maximum defect concentration. This behaviour and the mean value of the apparent diffusion coefficient found for the implanted chlorine, around 2.5 x 10 -14 cm 2 s -1 , reflect the high mobility of chlorine in UO 2 during irradiation with fission products

Chlorine diffusion in uranium dioxide under heavy ion irradiation

Science.gov (United States)

Pipon, Y.; Bérerd, N.; Moncoffre, N.; Peaucelle, C.; Toulhoat, N.; Jaffrézic, H.; Raimbault, L.; Sainsot, P.; Carlot, G.

2007-04-01

The radiation enhanced diffusion of chlorine in UO2 during heavy ion irradiation is studied. In order to simulate the behaviour of 36Cl, present as an impurity in UO2, 37Cl has been implanted into the samples (projected range 200 nm). The samples were then irradiated with 63.5 MeV 127I at two fluxes and two temperatures and the chlorine distribution was analyzed by SIMS. The results show that, during irradiation, the diffusion of the implanted chlorine is enhanced and slightly athermal with respect to pure thermal diffusion. A chlorine gain of 10% accumulating near the surface has been observed at 510 K. This corresponds to the displacement of pristine chlorine from a region of maximum defect concentration. This behaviour and the mean value of the apparent diffusion coefficient found for the implanted chlorine, around 2.5 × 10-14 cm2 s-1, reflect the high mobility of chlorine in UO2 during irradiation with fission products.

Investigations on carbon cluster formation in heavy ion irradiated polymers

International Nuclear Information System (INIS)

Tripathy, S.P.; Mishra, R.; Mawar, A.K.; Dwivedi, K.K.; Khathing, D.T.; Srivastava, A.; Avasthi, D.K.; Ghosh, S.; Fink, D.

2000-01-01

In polymers, the carbonaceous clusters are supposed to be responsible for the electrical conductivity. So, the irradiation of organic polymers namely polypropylene (8μ) and polyimide (50μ) by energetic heavy ions 28 Si and 58 Ni produce significant changes in the size of these clusters leading to the corresponding change in the band gap and other electrical properties as revealed by the UV-VIS spectroscopic examinations. (author)

Role of isolated and clustered DNA damage and the post-irradiating repair process in the effects of heavy ion beam irradiation

International Nuclear Information System (INIS)

Tokuyama, Yuka; Terato, Hiroaki; Furusawa, Yoshiya; Ide, Hiroshi; Yasui, Akira

2015-01-01

Clustered DNA damage is a specific type of DNA damage induced by ionizing radiation. Any type of ionizing radiation traverses the target DNA molecule as a beam, inducing damage along its track. Our previous study showed that clustered DNA damage yields decreased with increased linear energy transfer (LET), leading us to investigate the importance of clustered DNA damage in the biological effects of heavy ion beam radiation. In this study, we analyzed the yield of clustered base damage (comprising multiple base lesions) in cultured cells irradiated with various heavy ion beams, and investigated isolated base damage and the repair process in post-irradiation cultured cells. Chinese hamster ovary (CHO) cells were irradiated by carbon, silicon, argon and iron ion beams with LETs of 13, 55, 90 and 200 keV µm -1 , respectively. Agarose gel electrophoresis of the cells with enzymatic treatments indicated that clustered base damage yields decreased as the LET increased. The aldehyde reactive probe procedure showed that isolated base damage yields in the irradiated cells followed the same pattern. To analyze the cellular base damage process, clustered DNA damage repair was investigated using DNA repair mutant cells. DNA double-strand breaks accumulated in CHO mutant cells lacking Xrcc1 after irradiation, and the cell viability decreased. On the other hand, mouse embryonic fibroblast (Mef) cells lacking both Nth1 and Ogg1 became more resistant than the wild type Mef. Thus, clustered base damage seems to be involved in the expression of heavy ion beam biological effects via the repair process. (author)

Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation.

Science.gov (United States)

Kumar, Sandeep; Kumar, Sugam; Katharria, Y S; Safvan, C P; Kanjilal, D

2008-05-01

A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si(100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.

Genomic instability in mutation induction on normal human fibroblasts irradiated with chronic low-dose radiations in heavy-ion radiation field

International Nuclear Information System (INIS)

Suzuki, M.; Tsuruoka, C.; Uchihori, Y.; Yasuda, H.; Fujitaka, K.

2003-01-01

Full text: At a time when manned space exploration is more a reality with the planned the International Space Station (ISS) underway, the potential exposure of crews in a spacecraft to chronic low-dose radiations in the field of low-flux galactic cosmic rays (GCR) and the subsequent biological effects have become one of the major concerns of space science. We have studied both in vitro life span and genomic instability in cellular effects in normal human skin fibroblasts irradiated with chronic low-dose radiations in heavy-ion radiation field. Cells were cultured in a CO2 incubator, which was set in the irradiation room for the biological study of heavy ions in the Heavy Ion Medical Accelerator in Chiba (HIMAC) at National Institute of Radiological Sciences (NIRS), and irradiated with scattered radiations produced from heavy ions. Absorbed dose measured using a thermoluminescence dosimeter (TLD) and a Si-semiconductor detector was to be around 1.4 mGy per day when operating the HIMAC machine for biological experiments. The total population doubling number (tPDN) of low-dose irradiated cells was significantly smaller (79-93%) than that of unirradiated cells. The results indicate that the life span of the cell population shortens by irradiating with low-dose scattered radiations in the heavy-ion irradiation field. Genomic instability in cellular responses was examined to measure either cell killing or mutation induction in low-dose accumulated cells after exposing to X-ray challenging doses. The results showed that there was no enhanced effect on cell killing between low-dose accumulated and unirradiated cells after exposing to defined challenging doses of 200kV X rays. On the contrary, the mutation frequency on hprt locus of low-dose accumulated cells was much higher than that of unirradiated cells. The results suggested that genomic instability was induced in mutagenesis by the chronic low-dose irradiations in heavy-ion radiation field

Enhancement of photo sensor properties of nanocrystalline ZnO thin film by swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Mahajan, S. V.; Upadhye, D. S.; Bagul, S. B. [Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India); Shaikh, S. U.; Birajadar, R. B.; Siddiqui, F. Y.; Huse, N. P. [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India); Sharma, R. B., E-mail: ramphalsharma@yahoo.com, E-mail: rps.phy@gmail.com [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India); Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India)

2015-06-24

Nanocrystalline Zinc Oxide (ZnO) thin film prepared by Low cost Successive Ionic Layer Adsorption and Reaction (SILAR) method. This film was irradiated by 120 MeV Ni{sup 7+} ions with the fluence of 5x10{sup 12}ions/cm{sup 2}. The X-ray diffraction study was shows polycrystalline nature with wurtzite structure. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Photo Sensor nature was calculated by I-V characteristics with different sources of light 40W, 60W and 100W.

Selective binding of oligonucleotide on TiO{sub 2} surfaces modified by swift heavy ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Vicente Pérez-Girón, J. [Nanoate, S.L. C/Poeta Rafael Morales 2, San Sebastian de los Reyes, 28702 Madrid (Spain); Emerging Viruses Department Heinrich Pette Institute, Hamburg 20251 (Germany); Hirtz, M. [Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology - KIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); McAtamney, C.; Bell, A.P. [Advanced Microscopy Laboratory, CRANN, Trinity College Dublin, Dublin 2 (Ireland); Antonio Mas, J. [Laboratorio de Genómica del Centro de Apoyo Tecnológico, Universidad Rey Juan Carlos, Campus de Alcorcón 28922, Madrid (Spain); Jaafar, M. [Nanoate, S.L. C/Poeta Rafael Morales 2, San Sebastian de los Reyes, 28702 Madrid (Spain); Departamento de Física de la Materia Condensada, Facultad de Ciencias, Universidad Autónoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Luis, O. de [Nanoate, S.L. C/Poeta Rafael Morales 2, San Sebastian de los Reyes, 28702 Madrid (Spain); Departamento de Bioquímica, Fisiología y Genética Molecular, Facultad de Ciencias de la Salud, Universidad Rey Juan Carlos, Campus de Alcorcón, 28922 Madrid (Spain); Fuchs, H. [Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology - KIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Physical Institute and Center for Nanotechnology (CeNTech), Wilhelm-Klemm-Straße 10, University of Münster (Germany); and others

2014-11-15

We have used swift heavy-ion beam based lithography to create patterned bio-functional surfaces on rutile TiO{sub 2} single crystals. The applied lithography method generates a permanent and well defined periodic structure of micrometre sized square holes having nanostructured TiO{sub 2} surfaces, presenting different physical and chemical properties compared to the surrounding rutile single crystal surface. On the patterned substrates selective binding of oligonucleotides molecules is possible at the surfaces of the holes. This immobilisation process is only being controlled by UV light exposure. The patterned transparent substrates are compatible with fluorescence detection techniques, are mechanically robust, have a high tolerance to extreme chemical and temperature environments, and apparently do not degrade after ten cycles of use. These qualities make the patterned TiO{sub 2} substrates useful for potential biosensor applications.

In situ and postradiation analysis of mechanical stress in Al2O3:Cr induced by swift heavy-ion irradiation

International Nuclear Information System (INIS)

Skuratov, V.A.; Bujnarowski, G.; Kovalev, Yu.S.; O'Connell, J.; Havanscak, K.

2010-01-01

Optical spectroscopy and TEM techniques have been applied to study the radiation damage and correlated mechanical stresses in Al 2 O 3 and Al 2 O 3 :Cr single crystals induced by (1-3) MeV/amu Kr, Xe and Bi ion irradiation. Mechanical stresses were evaluated in situ using a piezospectroscopic effect through the shift of the respective lines in ionoluminescence spectra. It was found that dose dependence of the stress level for Xe and Bi ions, when ionization energy loss exceeds the threshold of damage formation via electronic excitations, exhibits several alternate stages showing the build-up and relaxation of stresses. The beginning of relaxation stages is observed at fluences associated with beginning of individual ion track regions overlapping. The residual stress profiles through the ion irradiated layers were deduced from depth-resolved photostimulated spectra using laser confocal scanning microscopy set-up. It was determined that stresses are compressive in basal plane and tensile in perpendicular direction in all samples irradiated with high energy ions.

Heavy Ion Irradiation Effects in Zirconium Nitride

International Nuclear Information System (INIS)

Egeland, G.W.; Bond, G.M.; Valdez, J.A.; Swadener, J.G.; McClellan, K.J.; Maloy, S.A.; Sickafus, K.E.; Oliver, B.

2004-01-01

Polycrystalline zirconium nitride (ZrN) samples were irradiated with He + , Kr ++ , and Xe ++ ions to high (>1.10 16 ions/cm 2 ) fluences at ∼100 K. Following ion irradiation, transmission electron microscopy (TEM) and grazing incidence X-ray diffraction (GIXRD) were used to analyze the microstructure and crystal structure of the post-irradiated material. For ion doses equivalent to approximately 200 displacements per atom (dpa), ZrN was found to resist any amorphization transformation, based on TEM observations. At very high displacement damage doses, GIXRD measurements revealed tetragonal splitting of some of the diffraction maxima (maxima which are associated with cubic ZrN prior to irradiation). In addition to TEM and GIXRD, mechanical property changes were characterized using nano-indentation. Nano-indentation revealed no change in elastic modulus of ZrN with increasing ion dose, while the hardness of the irradiated ZrN was found to increase significantly with ion dose. Finally, He + ion implanted ZrN samples were annealed to examine He gas retention properties of ZrN as a function of annealing temperature. He gas release was measured using a residual gas analysis (RGA) spectrometer. RGA measurements were performed on He-implanted ZrN samples and on ZrN samples that had also been irradiated with Xe ++ ions, in order to introduce high levels of displacive radiation damage into the matrix. He evolution studies revealed that ZrN samples with high levels of displacement damage due to Xe implantation, show a lower temperature threshold for He release than do pristine ZrN samples. (authors)

125 MeV Si 9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

Science.gov (United States)

Elayaraja, K.; Joshy, M. I. Ahymah; Suganthi, R. V.; Kalkura, S. Narayana; Palanichamy, M.; Ashok, M.; Sivakumar, V. V.; Kulriya, P. K.; Sulania, I.; Kanjilal, D.; Asokan, K.

2011-01-01

Titanium substrate was coated with hydroxyapatite by radiofrequency magnetron sputtering (rf-magnetron sputtering) technique and subjected to swift heavy ion (SHI) irradiation of 125 MeV with Si 9+ at fluences of 1 × 10 10, 1 × 10 11 and 1 × 10 12 ions/cm 2. The glancing incidence X-ray diffraction (GIXRD) analysis confirmed the HAp phase of the irradiated film. There was a considerable decrease in crystallinity and particle size after irradiation. In addition, DRS-UV reflectance spectra revealed a decrease in optical band gap ( Eg) from 5.2 to 4.6 eV. Wettability of biocompatible materials plays an important role in biological cells proliferation for tissue engineering, drug delivery, gene transfer and bone growth. HAp thin films irradiated with 1 × 10 11 ions/cm 2 fluence showed significant increase in wettability. While the SHI irradiated samples exhibited enhanced bioactivity, there was no significant variation in cell viability. Surface roughness, pores and average particle size were analyzed by atomic force microscopy (AFM).

Metastable phases in Zr-Excel alloy and their stability under heavy ion (Kr{sup 2+}) irradiation

Energy Technology Data Exchange (ETDEWEB)

Yu, Hongbing, E-mail: 12hy1@queensu.ca [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada); Zhang, Ken; Yao, Zhongwen [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada); Kirk, Mark A. [Material Science Division Argonne National Laboratory, Argonne, IL, 60439 (United States); Long, Fei; Daymond, Mark R. [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada)

2016-02-15

Zr-Excel alloy (Zr-3.5Sn-0.8Nb-0.8Mo, wt.%) has been proposed as a candidate material of pressure tubes in the CANDU-SCWR design. It is a dual-phase alloy containing primary hcp α-Zr and metastable bcc β-Zr. Metastable hexagonal ω-Zr phase could form in β-Zr as a result of aging during the processing of the tube. A synchrotron X-ray study was employed to study the lattice properties of the metastable phases in as-received Zr-Excel pressure tube material. In situ heavy ion (1 MeV Kr{sup 2+}) irradiations were carried out at 200 °C and 450 °C to emulate the stability of the metastable phase under a reactor environment. Quantitative Chemi-STEM EDS analysis was conducted on both un-irradiated and irradiated samples to investigate alloying element redistribution induced by heavy ion irradiation. It was found that no decomposition of β-Zr was observed under irradiation at both 200 °C and 450 °C. However, ω-Zr particles experienced shape changes and shrinkage associated with enrichment of Fe at the β/ω interface during 200 °C irradiation but not at 450 °C. There is a noticeable increase in the level of Fe in the α matrix after irradiation at both 200 °C and 450 °C. The concentrations of Nb, Mo and Fe are increased in the ω phase but decreased in the β phase at 200 °C. The stability of metastable phases under heavy ion irradiation associated with elemental redistribution is discussed.

Quantitative analysis of the epitaxial recrystallization effect induced by swift heavy ions in silicon carbide

International Nuclear Information System (INIS)

Benyagoub, A.

2015-01-01

This paper discusses recent results on the recrystallization effect induced by swift heavy ions (SHI) in pre-damaged silicon carbide. The recrystallization kinetics was followed by using increasing SHI fluences and by starting from different levels of initial damage within the SiC samples. The quantitative analysis of the data shows that the recrystallization rate depends drastically on the local amount of crystalline material: it is nil in fully amorphous regions and becomes more significant with increasing amount of crystalline material. For instance, in samples initially nearly half-disordered, the recrystallization rate per incident ion is found to be 3 orders of magnitude higher than what it is observed with the well-known IBIEC process using low energy ions. This high rate can therefore not be accounted for by the existing IBIEC models. Moreover, decreasing the electronic energy loss leads to a drastic reduction of the recrystallization rate. A comprehensive quantitative analysis of all the experimental results shows that the SHI induced high recrystallization rate can only be explained by a mechanism based on the melting of the amorphous zones through a thermal spike process followed by an epitaxial recrystallization initiated from the neighboring crystalline regions if the size of the latter exceeds a certain critical value. This quantitative analysis also reveals that recent molecular dynamics calculations supposed to reproduce this phenomenon are wrong since they overestimated the recrystallization rate by a factor ∼40.

Effect of ion irradiation on nanoscale TiS2 systems with suppressed Titania phase

International Nuclear Information System (INIS)

Hazarika, Saurabh J; Mohanta, Dambarudhar; Tripathi, A; Kanjilal, D.

2016-01-01

Titanium disulfide (TiS 2 ), being an important of the transition metal dichalcogenide, (TMDC) family, has drawn numerous interest owing to exhibition of tunable band gap as well as high carrier mobility. In this work, we highlight preparation of TiS 2 nanopowder with minimal TiO 2 content and also demonstrate modified properties upon swift heavy ion irradiation on TiS 2 nanoparticles dispersed PVA films. Different properties of the irradiated samples have been characterized through diffraction, microscopic and spectroscopic techniques. As a result of irradiation, due to agglomeration of particles, the grain size is found to increase. We could also observe a red shift after irradiation with increasing fluence, leading to easy flow of electron from valence to conduction band, which shows that conduction of electrons is more in case of irradiated films compared to the pristine one and thus there may be a possibility of using the irradiated samples in various optoelectronic devices. (paper)

Radiation induced muscositis as space flight risk. Model studies on X-ray and heavy ion irradiated typical oral mucosa models

International Nuclear Information System (INIS)

Tschachojan, Viktoria

2014-01-01

Humans in exomagnetospheric space are exposed to highly energetic heavy ion radiation which can be hardly shielded. Since radiation-induced mucositis constitutes a severe complication of heavy ion radiotherapy, it would also implicate a serious medical safety risk for the crew members during prolonged space flights such as missions to Moon or Mars. For assessment of risk developing radiation-induced mucositis, three-dimensional organotypic cultures of immortalized human keratinocytes and fibroblasts were irradiated with a 12 C particle beam at high energies or X-Rays. Immunofluorescence stainings were done from cryosections and radiation induced release of cytokines and chemokines was quantified by ELISA from culture supernatants. The major focuses of this study were on 4, 8, 24 and 48 hours after irradiation. The conducted analyses of our mucosa model showed many structural similarities with the native oral mucosa and authentic immunological responses to radiation exposure. Quantification of the DNA damage in irradiated mucosa models revealed about twice as many DSB after heavy-ion irradiation compared to X-rays at definite doses and time points, suggesting a higher gene toxicity of heavy ions. Nuclear factor κB activation was observed after treatment with X-rays or 12 C particles. An activation of NF κB p65 in irradiated samples could not be detected. ELISA analyses showed significantly higher interleukin 6 and interleukin 8 levels after irradiation with X-rays and 12 C particles compared to non-irradiated controls. However, only X-rays induced significantly higher levels of interleukin 1β. Analyses of TNF-α and IFN-γ showed no radiation-induced effects. Further analyses revealed a radiation-induced reduction in proliferation and loss of compactness in irradiated oral mucosa model, which would lead to local lesions in vivo. In this study we revealed that several pro-inflammatory markers and structural changes are induced by X-rays and heavy-ion irradiation

Ionic conduction in 70-MeV C5+-ion-irradiated poly(vinylidenefluoride- co-hexafluoropropylene)-based gel polymer electrolytes

International Nuclear Information System (INIS)

Saikia, D.; Kumar, A.; Singh, F.; Avasthi, D.K.; Mishra, N.C.

2005-01-01

In an attempt to increase the Li + -ion diffusivity, poly(vinylidenefluoride-co-hexafluoropropylene)-(propylene carbonate+diethyl carbonate)-lithium perchlorate gel polymer electrolyte system has been irradiated with 70-MeV C 5+ -ion beam of nine different fluences. Swift heavy-ion irradiation shows enhancement in ionic conductivity at lower fluences and decrease in ionic conductivity at higher fluences with respect to unirradiated gel polymer electrolyte films. Maximum room-temperature (303 K) ionic conductivity is found to be 2x10 -2 S/cm after irradiation with a fluence of 10 11 ions/cm 2 . This interesting result could be attributed to the fact that for a particular ion beam with a given energy, a higher fluence provides critical activation energy for cross linking and crystallization to occur, which results in the decrease in ionic conductivity. X-ray-diffraction results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤10 11 ions/cm 2 ) and increase in crystallinity at higher fluences (>10 11 ions/cm 2 ). Analysis of Fourier-transform infrared spectroscopy results suggests the bond breaking at a fluence of 5x10 9 ions/cm 2 and cross linking at a fluence of 10 12 ions/cm 2 and corroborate conductivity and x-ray-diffraction results. Scanning electron micrographs exhibit increased porosity of the polymer electrolyte after ion irradiation

Radiation therapy using high-energy heavy-ion

International Nuclear Information System (INIS)

Kanai, Tatsuaki

1995-01-01

The clinical trial of the heavy-ion radiotherapy was started at June 1994 after pre-clinical experiments using 290 MeV/u carbon beam. In this paper, an irradiation system for the heavy-ion radiotherapy installed at HIMAC (Heavy Ion Medical Accelerator in Chiba) and the physical characteristics of the therapeutic beam were discussed. (author)

Tracks induced by swift heavy ions in semiconductors

International Nuclear Information System (INIS)

Szenes, G.; Horvath, Z.E.; Pecz, B.; Toth, L.; Paszti, F.

2002-01-01

InSb, GaSb, InP, InAs, and GaAs single crystals were irradiated with Pb ions in the range of 385-2170 MeV. The samples were studied by transmission and high-resolution electron microscopy and Rutherford backscattering in channeling geometry. The energetic ions induced isolated tracks in all crystals but GaAs. The thermal spike analysis revealed that the variation of the damage cross section with the ion energy is considerably weaker than in insulators. The widths of the thermal spike a(0) was estimated. The analysis was extended to recent C 60 experiments on Ge and Si. A quantitative relation was found between a(0) and the gap energy E g : a(0) is reduced with increasing E g , and its lowest value is close to that found in insulators

Tailoring of refractive index profiles in LiNbO3 optical waveguides by low-fluence swift-ion irradiation

International Nuclear Information System (INIS)

Ruiz, T; Mendez, A; Carrascosa, M; Carnicero, J; GarcIa-Cabanes, A; Olivares, J; Agullo-Lopez, F; GarcIa-Navarro, A; GarcIa, G

2007-01-01

Proton-exchange LiNbO 3 planar optical waveguides have been irradiated with swift ions (Cl 30 MeV) at very low fluences in the range 5 x 10 10 -5 x 10 12 cm -2 . Large modifications in the refractive index profiles, and therefore in the optical performance, have been obtained due to the generation of amorphous nano-tracks by the individual ion impacts. Moreover, a fine tuning of the refractive index can be achieved by a suitable control of the fluence (δn/δφ ∼ 10 -14 cm 2 or δn ∼ 10 -5 for δφ = 10 9 cm -2 ). An effective medium approach has been used to account for those changes and determine the amorphous fraction of material. The results have been compared with information extracted from complementary RBS channelling experiments. From the calculated amorphous fractions a radius of ∼2 nm for the amorphous tracks have been estimated

Nano-sized surface modifications induced by the impact of slow highly charged ions - A first review

International Nuclear Information System (INIS)

Aumayr, F.; El-Said, A.S.; Meissl, W.

2008-01-01

Irradiation of crystalline solid targets with swift heavy ions can lead to the formation of latent tracks in the solid and the creation of (mostly-hillock type) nanostructures on the surface. Recently similar surface modifications with nanometer dimensions have been demonstrated for the impact of individual, very slow but highly charged ions on various surfaces. We will review the current state of this new field of research. In particular we will discuss the circumstances and conditions under which nano-sized features (hillocks or craters) on different surfaces due to impact of slow highly charged ions can be produced. The use of slow highly charged ions instead of swift heavy ions might be of considerable interest for some practical applications

Formation and evolution of point defects created in alkali halogen compounds irradiated by heavy ions; Formation et evolution des defauts ponctuels crees dans certains halogenures alcalins irradies par des ions lourds

Energy Technology Data Exchange (ETDEWEB)

Hourdequin, E [Nantes Univ., 44 (France)

1993-07-16

The goal of this study was to achieve a better understanding of the heavy-ion material interaction. Alkali halogen crystals were chosen since the color centers produced by heavy ions can be distinguished easier from those generated by X rays. Measurements on KI irradiated at low temperature showed that the usual process of non radiative de-excitation of self-captured exciton is not prevailing. As the main objective of this work was the exact determination of the defects created by accelerated heavy ions, an important effort was dedicated to the spectrum deconvolution. Due to the high quality of the obtained spectra the V band analyse was possible. The defect stability was found to have the same nature in all the cubical alkali halogens and depend essentially on the crystal type. The defect evolution after irradiation is related to the diffusion coefficients corresponding to each mobile species and to the crystal lattice in which they move. Based on measurements made at different temperatures a simple modeling of the recombination kinetics was proposed. This effect was found to be specific to irradiation by heavy ions. It is difficult to determine the initial processes from the fossil defects, so, the defect history must be known as the described investigation methods do not permit to establish the transient aspect of defect creation. The important role of impurities should be stressed as the third intruder in the ion/crystal configuration; it can modify significantly the final state of the irradiated crystal, as it was found in KI, for instance. The open problems underlined in this study will probably be solved by using the atomic force microscopy and diffraction or on-line Raman measurements in ISOC chamber to avoid the passage to ambient conditions of the crystals irradiated at low temperatures 60 refs.

Effects of heavy particle irradiation on central nervous system

International Nuclear Information System (INIS)

Nojima, Kumie; Nakadai, Taeko; Khono, Yukio

2006-01-01

Effects of low dose heavy particle radiation to central nervous system were studied using human embryonal carcinoma (Ntera2=NT2) and Human neuroblastoma cell (NB1). They exposed to heavy ions and X ray 80% confluent cells in culture bottles. The cells were different type about growth and differentiation in the neuron. The apoptosis profile was measured by AnnexinV-EGFP, PI stained and fluorescence-activated cell sorter (FACS). Memory and learning function of adult mice were studied using water maze test after carbon- or iron-ion irradiation. Memory functions were rapidly decreased after irradiation both ions. Iron -ion group were recovered 20 weeks after irradiation C-ion group were recovered 25 weeks after irradiation. Tier memory were still keep at over 100 weeks after irradiation. (author)

Critical current densities and flux creep rate in Co-doped BaFe2As2 with columnar defects introduced by heavy-Ion irradiation

International Nuclear Information System (INIS)

Nakajima, Y.; Tsuchiya, Y.; Taen, T.; Yagyuda, H.; Tamegai, T.; Okayasu, S.; Sasase, M.; Kitamura, H.; Murakami, T.

2010-01-01

We report the formation of columnar defects in Co-doped BaFe 2 As 2 single crystals with different heavy-ion irradiations. The formation of columnar defects by 200 MeV Au ion irradiation is confirmed by transmission electron microscopy and their density is about 40% of the irradiation dose. Magneto-optical imaging and bulk magnetization measurements reveal that the critical current density J c is enhanced in the 200 MeV Au and 800 MeV Xe ion irradiated samples while J c is unchanged in the 200 MeV Ni ion irradiated sample. We also find that vortex creep rates are strongly suppressed by the columnar defects. We compare the effect of heavy-ion irradiation into Co-doped BaFe 2 As 2 and cuprate superconductors.

Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag8+)

International Nuclear Information System (INIS)

Kaur, Amarjeet; Dhillon, Anju; Avasthi, D.K.

2013-01-01

Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10 10 to 10 12 ions cm −2 of 100 MeV silver (Ag 8+ ) ions. The temperature dependence of ac conductivity [σ m (ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag 8+ ) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation

Ionic conduction studies in Li3+ ion irradiated P(VDF-HFP)-(PC + DEC)-LiCF3SO3 gel polymer electrolyte

International Nuclear Information System (INIS)

Saikia, D.; Hussain, A.M.P.; Kumar, A.; Singh, F.; Avasthi, D.K.

2006-01-01

In an attempt to increase the Li ion diffusivity in gel polymer electrolytes, the effects of Li 3+ ion irradiation in P(VDF-HFP)-(PC + DEC)-LiCF 3 SO 3 electrolyte system, with five different fluences, is studied. Irradiation with swift heavy ions shows enhancement in conductivity at low fluences and decreased in conductivity at higher fluences with respect to pristine polymer electrolyte films. Maximum room temperature ionic conductivity after irradiation is found to be 2.6 x 10 -3 S/cm. This interesting result could be attributed to the fact that, higher fluence provides critical activation energy for cross-linking and crystallization to occur, which results in decrease in ionic conductivity. XRD results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤10 11 ions/cm 2 ) and increase in crystallinity at high fluences (>10 11 ions/cm 2 ). In FTIR spectra the absorption band intensities around 3025 cm -1 and 2985 cm -1 decrease upon irradiation with a fluence of 5 x 10 1 ions/cm 2 suggesting chain scission and increase upon irradiation with a fluence of 5 x 10 12 ions/cm 2 indicating cross-linking. FTIR analyses corroborate the conductivity and XRD results

Microstructural and plasmonic modifications in Ag–TiO2 and Au–TiO2 nanocomposites through ion beam irradiation

Directory of Open Access Journals (Sweden)

Venkata Sai Kiran Chakravadhanula

2014-09-01

Full Text Available The development of new fabrication techniques of plasmonic nanocomposites with specific properties is an ongoing issue in the plasmonic and nanophotonics community. In this paper we report detailed investigations on the modifications of the microstructural and plasmonic properties of metal–titania nanocomposite films induced by swift heavy ions. Au–TiO2 and Ag–TiO2 nanocomposite thin films with varying metal volume fractions were deposited by co-sputtering and were subsequently irradiated by 100 MeV Ag8+ ions at various ion fluences. The morphology of these nanocomposite thin films before and after ion beam irradiation has been investigated in detail by transmission electron microscopy studies, which showed interesting changes in the titania matrix. Additionally, interesting modifications in the plasmonic absorption behavior for both Au–TiO2 and Ag–TiO2 nanocomposites were observed, which have been discussed in terms of ion beam induced growth of nanoparticles and structural modifications in the titania matrix.

Effect of Pre-Gamma Irradiation Induction of Metallothionein on potentially Radiation-Induced Toxic Heavy Metals Ions In Rats

International Nuclear Information System (INIS)

El-Shamy, El.

2004-01-01

Metallothionein, which is a cystein-rich metal binding protein, can act as free radical scavenger and involved in resistance to heavy metal toxicity. The induction of synthesis has been shown to protect organs from the toxic effect of radiation. This study aimed to stud the effects of pre-irradiation induction of by heavy metal (Zinc sulfate) on potentially gamma radiation-induced toxic heavy metals ions in rate liver and kidney tissues. Forty eight albino rats were included in this study. They were divided into eight groups each of six animals. Two control groups injected with saline. Two Zinc sulfate-treated groups injected with zinc sulfate, two Irradiated groups exposed to a single dose level (7 Gy) of whole body gamma irradiation and two combined zinc sulfate and irradiation groups injected with zinc sulfate and exposed to whole body gamma irradiation (at dose 7 Gy). Animals of all groups were sacrificed 24 and 48 hours after last either zinc sulfate dose or irradiation. Samples of liver and kidney's tissues were subjected to the following investigations: Estimation of tissue heavy Metals (Zinc, Iron and Copper), and tissue (MT). After irradiation, liver and kidney MT were increased approximately 10-fold and 2-fold respectively after irradiation. Accumulation of zinc and iron in both liver and kidney tissues were detected, while accumulation of copper only in the liver tissues. The pre-irradiation treatment with zinc sulfate (Zn SO4) resulted in highly significant decrease in zinc, iron, and copper levels in both liver and kidney tissues in comparison with irradiation groups. Conclusion, it can be supposed that pre-irradiation injection of ZnSO 4 exerted protective effect against the potentially radiation-induced toxic heavy metals ions through MT induction

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

Swift heavy ion irradiation induced modifications in the optical band gap and Urbach's tail in polyaniline nanofibers

International Nuclear Information System (INIS)

Banerjee, Somik; Kumar, A.

2011-01-01

Optical band gap and Urbach tail width of HCl and CSA doped polyaniline (PAni) nanofibers and the ion beam induced modifications in the band gap and Urbach's tail of the samples have been studied employing UV-Vis absorption spectroscopy. All the major bands appearing in the FTIR spectra exhibit a decrease in intensity and broadening in their band widths upon interaction with the highly energetic ion beams. This suggests that SHI irradiation induces chain-scissioning events in the PAni nanofibers. An interesting result that comes out from the FTIR analysis is a transition from the benzenoid to quinoid states in the PAni chains, which reveals that there is a decrease in the degree of conjugation in the polymer upon irradiation. Optical absorption studies indicate three direct allowed transitions at ∼2.64, 3.61 and 4.08 eV for HCl doped PAni nanofibers and at ∼2.62, 3.49 and 4.02 eV for the CSA doped PAni nanofibers. The optical band gap is found to increase with increasing ion fluence which may be attributed to the reduction in the fiber diameters upon irradiation, which is corroborated by TEM analysis. Increase in the optical band gap also points out to a decrease in the conjugation length due to the larger torsion angles between the adjacent phenyl rings of the polymer with respect to the plane of the nitrogen atoms, which is also supported by FTIR results. The Urbach tail width decreases with increasing ion fluence indicating that structural disorders are annealed out of the PAni nanofibers which is also observed from the plots of (αhν) 2 against photon energy (hν) for HCl doped PAni nanofibers. The quantum confinement effect is confirmed by fact that a band gap exhibits a linear dependence on the inverse of the square of the radius of the PAni nanofibers. Infact, the increase in the optical band gap may be a combined effect of the decrease in the Urbach band width and the quantum confinement effect.

Beam modulation for heavy ion radiotherapy

International Nuclear Information System (INIS)

Kanai, T.; Minohara, S.; Sudou, M.

1993-01-01

The first clinical trial of heavy ion radiation therapy is scheduled in 1994 by using the heavy ion medical accelerator in Chiba (HIMAC). In order to start the clinical trial, first, it is necessary to know the physical characteristics of high energy heavy ions in human bodies, for example, dose and linear energy transfer (LET) distribution. Also the knowledge on the biological effectiveness of heavy ions is required. Based on these biophysical properties of heavy ions, monoenergetic heavy ion beam should be modulated so as to make the spread Bragg peak suitable to heavy ion radiation therapy. In order to establish a methodology to obtain the most effective spread Bragg peak for heavy ion radiation therapy, a heavy ion irradiation port at the RIKEN ring cyclotron facility was constructed. By using a 135 MeV/u carbon beam, the biophysical properties of the heavy ions were investigated, and a range modulator was designed to have uniform biological response in the spread Bragg peak. The physical and biological rationality of the spread Bragg peak were investigated. The dose, LET and biological effect of a monoenergetic heavy ion beam, the design of the range modulator, and the distributions of LET and biological dose for the spread Bragg peak are reported. (K.I.)

Mutation spectrum of accelerated heavy ions

International Nuclear Information System (INIS)

Takatsuji, Toshihiro; Matsuse, Michiko; Nakazawa, Y.

2004-01-01

Using Drosophila melanogaster which has X-linked white-ivory eye-color mutation w i and two recessive genes of wing-hair mwh and flr transheterozygously located on the third chromosomes, we scored mosaic spots in eye and wing of male flies irradiated with accelerated heavy ions at the period of larvae. Results of two irradiation conditions were compared. One is that all dose were irradiated with one heavy ion spill (irradiation time was about 0.3 sec), and another was that the dose were divided into multi spills (50-100 spills, irradiation time is about 3-6 minutes). The dose was selected that the average hit of the ion to the cell nucleus was about 0.2. If some difference exists, some information must be transmitted from hit cells or the protoplast to the nucleus which is not hit. As a result, the difference was not observed, and any sign of the bystander effect was not detected. (author)

Surface Modifications of Polymers Induced by Heavy Ions Grafting

Energy Technology Data Exchange (ETDEWEB)

Mazzei, R O; Lombardo, J; Camporotondi, D; Tadey, D; Bermudez, G G [National Atomic Energy Commission, Ezeiza Atomic Centre, Ezeiza (Argentina)

2012-09-15

Polymer surfaces are modified by the application of swift heavy ions etching and grafting procedures. The residual active sites produced by heavy ion beams, remaining after the etching process, were used to start the grafting process. In order to produce tracks on foils of poly(vinylidene fluoride) (PVDF) they were irradiated with {sup 208}Pb of 25.62 MeV/n or with 115 MeV Cl ions. Moreover, foils of polypropylene (PP) were irradiated with {sup 208}Pb of 25.62 MeV/n. Then, they were etched and grafted with N-isopropylacrylamide (NIPAAm) monomers or with acrylic acid (AAc) monomers, respectively. The replica method allowed the observation of the shape of the grafted tracks using transmission electron microscopy (TEM). In addition NIPAAm grafted foils were analyzed using Fourier transform infrared spectroscopy (FTIR). The sulfonation procedure (methodology previously described for perfluorated polymers) was applied on grafted PVDF. A new method is described to produce a thin layer of poly-acrylic-acid (membranes) that grows on the surface of PVDF foils implanted by an Ar{sup +} beam with energies between 30-150 keV. Different combinations of monomers in water solutions were used such as: acrylic acid (AAc); acrylic acid-glycidyl methacrylate (AAc-GMA); acrylic acid-styrene (AAc-S); acrylic acid-N-isopropyl acrylamide (AAc-NIPAAm) and acrylic acid-N-isopropyl acrylamide - glycidyl methacrylate (AAc-NIPAAm-GMA). The experimental results show that for particular values of: ion fluence and energy, AAc concentration, sulphuric acid and PVDF polymorphous (alpha or beta) a huge percentage of grafting was obtained. At certain point of the grafting process the development of the PolyAAc-Xmonomer produce a detachment from the irradiated substrate and continue its grafting outside it. This method produces a membrane that is an increased replica of the original implanted surface. Finally, PVDF films implanted by an Ar{sup +} beam with energies about 100 keV and a fluence of 10

Development and clinical application of respiration gated irradiation system (ReGIS) in heavy ion radiotherapy

International Nuclear Information System (INIS)

Osaka, Yasuhiro; Tsujii, Hirohiko; Mizoe, Jun-etsu

1999-01-01

In order to achieve maximal radiation dose concentration for thoraco-abdominal tumors and spare normal surrounding tissue in heavy ion therapy, compensation for respiration-related movement is desirable. Hence, a respiration-gated irradiation system (ReGIS) was introduced to the Heavy Ion Medical Accelerator in Chiba (HIMAC) in June 1996. In this report, the development and clinical application of ReGIS, as well as the analysis of respiration-related movement and reduction of target volumes are described. When using ReGIS, a sensor emitting infrared rays is attached to the thoracic or abdominal wall to measure respiratory movement. A position-sensitive device (camera) senses these rays to detect sensor locations and data are forwarded to a computer system. A curve representing respiratory cycles is displayed, upon which a trigger level that is part of a respiratory cycle (about a fourth or fifth of the expiratory phase). Beams can be delivered while the respiratory curve is under the trigger level. Thirty-five patients involving 37 irradiated sites (19 lung cancers, 13 hepatomas, 2 mediastinal tumors, and 3 metastatic lung tumors) were retrospectively analyzed. Target volumes were reduced an average of 29.5% (11.0 to 57.9%) using ReGIS. Average tumor respiration-related movement in gated phase was 3.7 mm (0 mm to 14.6 mm). Although irradiation using ReGIS took more time to perform (average 1.62 times non-gated irradiation), it was considered to be acceptable for routine heavy ion therapy. ReGIS has proved to be useful for compensation of respiration-related movement and reduction of target volume in radiotherapy, and this method is sufficiently simple for practical clinical application. (author)

Bulletin of Materials Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the ...

Effects of ion beam irradiation on semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Nashiyama, Isamu; Hirao, Toshio; Itoh, Hisayoshi; Ohshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods such as a scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. (author)

Generation of colour centres in yttria-stabilized zirconia by heavy ion irradiations in the GeV range

International Nuclear Information System (INIS)

Costantini, Jean-Marc; Beuneu, Francois; Schwartz, Kurt; Trautmann, Christina

2010-01-01

We have studied the colour centre production in yttria-stabilized zirconia (ZrO 2 :Y 3+ ) by heavy ion irradiation in the GeV range using on-line UV-visible optical absorption spectroscopy. Experiments were performed with 11.4 MeV amu -1 127 Xe, 197 Au, 208 Pb and 238 U ion irradiations at 8 K or room temperature (RT). A broad and asymmetrical absorption band peaked at a wavelength about 500 nm is recorded regardless of the irradiation parameters, in agreement with previous RT irradiations with heavy ions in the 100 MeV range. This band is de-convoluted into two broad Gaussian-shaped bands centred at photon energies about 2.4 and 3.1 eV that are respectively associated with the F + -type centres (involving a singly ionized oxygen vacancy, V O · ) and T centres (i.e. Zr 3+ in a trigonal symmetry) observed by electron paramagnetic resonance (EPR) spectroscopy. In the case of 8 K Au ion irradiation at low fluences, six bands are used at about 1.9, 2.3, 2.7, 3.1 and 4.0 eV. The three bands near 2.0-2.5 eV can be assigned to oxygen divacancies (i.e. F 2 + centres). No significant effect of the irradiation temperature is found on the widths of all absorption bands for the same ion and fluence. This is attributed to the inhomogeneous broadening arising from the static disorder due to the native charge-compensating oxygen vacancies. However, the colour centre production yield is strongly enhanced at 8 K with respect to RT. When heating irradiated samples from 8 K to RT, the extra colour centres produced at low temperature do not recover completely to the level of RT irradiation. The latter results are accounted for by an electronically driven defect recovery process.

Thermal spike analysis of highly charged ion tracks

International Nuclear Information System (INIS)

Karlušić, M.; Jakšić, M.

2012-01-01

The irradiation of material using swift heavy ion or highly charged ion causes excitation of the electron subsystem at nanometer scale along the ion trajectory. According to the thermal spike model, energy deposited into the electron subsystem leads to temperature increase due to electron–phonon coupling. If ion-induced excitation is sufficiently intensive, then melting of the material can occur, and permanent damage (i.e., ion track) can be formed upon rapid cooling. We present an extension of the analytical thermal spike model of Szenes for the analysis of surface ion track produced after the impact of highly charged ion. By applying the model to existing experimental data, more than 60% of the potential energy of the highly charged ion was shown to be retained in the material during the impact and transformed into the energy of the thermal spike. This value is much higher than 20–40% of the transferred energy into the thermal spike by swift heavy ion. Thresholds for formation of highly charged ion track in different materials show uniform behavior depending only on few material parameters.

Heavy ion beam factory for material science based on the KEK digital accelerator

Energy Technology Data Exchange (ETDEWEB)

Takayama, Ken, E-mail: takayama@post.kek.jp [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Graduate University for Advanced Studies, Hayama, Kanagawa 240-0193 (Japan); Tokyo Institute of Technology, Nagatusda, Yokohama, Knagawa 226-8502 (Japan); Adachi, Toshikazu [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Graduate University for Advanced Studies, Hayama, Kanagawa 240-0193 (Japan); Arai, Teruo; Arakawa, Dai [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Asao, Hiroyuki [NEC Network-Sensor, Fuchu, Tokyo 183-8501 (Japan); Barata, Yuji; Harada, Shinya [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Tokyo City University, Todoroki, Tokyo 158-8586 (Japan); Horioka, Kazuhiko [Tokyo Institute of Technology, Nagatusda, Yokohama, Knagawa 226-8502 (Japan); Iwata, Taiki; Kadokura, Eiichi; Kwakubo, Tadamichi; Kubo, Tomio [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Leo, Kwee Wah [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Graduate University for Advanced Studies, Hayama, Kanagawa 240-0193 (Japan); Liu, Xingguaung [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Tokyo Institute of Technology, Nagatusda, Yokohama, Knagawa 226-8502 (Japan); Mochiki, Koichi [Tokyo City University, Todoroki, Tokyo 158-8586 (Japan); Munemoto, Naoya [Tokyo Institute of Technology, Nagatusda, Yokohama, Knagawa 226-8502 (Japan); Nakanishi, Hiroshi [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Okada, Yoshihito [NEC Network-Sensor, Fuchu, Tokyo 183-8501 (Japan); Okamura, Katsuya [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Graduate University for Advanced Studies, Hayama, Kanagawa 240-0193 (Japan); and others

2013-11-01

The KEK digital accelerator (DA) is an alternative to high-voltage electrostatic accelerators and conventional cyclotrons and synchrotrons, which are commonly used as swift heavy ion beam drivers. Compared with conventional accelerators, KEK-DA is capable of delivering a wider variety of ion species with various energies, as a result of its intrinsic properties. It is expected to serve as a heavy ion beam factory for research in materials science. Plans for its utilization include unique application programs, such as laboratory-based space science using virtual cosmic rays, heavy-ion mutagenesis in microorganisms, deep ion implantation, and modification of materials, which may be categorized into systematic studies of the spatial and temporal evolution of the locally and highly excited states of materials.

Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag{sup 8+})

Energy Technology Data Exchange (ETDEWEB)

Kaur, Amarjeet, E-mail: amarkaur@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Dhillon, Anju [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Avasthi, D.K. [Inter University Accelerator Center (IUAC), Aruna Asaf Ali Road, New Delhi 110067 (India)

2013-07-15

Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10{sup 10} to 10{sup 12} ions cm{sup −2} of 100 MeV silver (Ag{sup 8+}) ions. The temperature dependence of ac conductivity [σ{sub m}(ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag{sup 8+}) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation.

Amorphisation of boron carbide under slow heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Gosset, D., E-mail: Dominique.gosset@cea.fr [CEA Saclay, DEN, DANS, DMN, SRMA, LA2M, Université Paris-Saclay, 91191, Gif/Yvette (France); Miro, S. [CEA Saclay, DEN, DANS, DMN, SRMP, Laboratoire JANNUS, Université Paris-Saclay, 91191, Gif/Yvette (France); Doriot, S. [CEA Saclay, DEN, DANS, DMN, SRMA, LA2M, Université Paris-Saclay, 91191, Gif/Yvette (France); Moncoffre, N. [CNRS/IN2P3/IPNL, 69622, Villeurbanne (France)

2016-08-01

Boron carbide B{sub 4}C is widely used as a neutron absorber in nuclear plants. Most of the post-irradiation examinations have shown that the structure of the material remains crystalline, in spite of very high atomic displacement rates. Here, we have irradiated B{sub 4}C samples with 4 MeV Au ions with different fluences at room temperature. Transmission electron microscopy (TEM) and Raman spectroscopy have been performed. The Raman analyses show a high structural disorder at low fluence, around 10{sup −2} displacements per atoms (dpa). However, the TEM observations show that the material remains crystalline up to a few dpa. At high fluence, small amorphous areas a few nanometers large appear in the damaged zone but the long range order is preserved. Moreover, the size and density of the amorphous zones do not significantly grow when the damage increases. On the other hand, full amorphisation is observed in the implanted zone at a Au concentration of about 0.0005. It can be inferred from those results that short range and long range damages arise at highly different fluences, that heavy ions implantation has drastic effects on the structure stability and that in this material self-healing mechanisms are active in the damaged zone.

Accumulation of dislocation loops in the α phase of Zr Excel alloy under heavy ion irradiation

Science.gov (United States)

Yu, Hongbing; Yao, Zhongwen; Idrees, Yasir; Zhang, He K.; Kirk, Mark A.; Daymond, Mark R.

2017-08-01

In-situ heavy ion irradiations were performed on the high Sn content Zr alloy 'Excel', measuring type dislocation loop accumulation up to irradiation damage doses of 10 dpa at a range of temperatures. The high content of Sn, which diffuses slowly, and the thin foil geometry of the sample provide a unique opportunity to study an extreme case where displacement cascades dominate the loop formation and evolution. The dynamic observation of dislocation loop evolution under irradiation at 200 °C reveals that type dislocation loops can form at very low dose (0.0025 dpa). The size of the dislocation loops increases slightly with irradiation damage dose. The mechanism controlling loop growth in this study is different from that in neutron irradiation; in this study, larger dislocation loops can condense directly from the interaction of displacement cascades and the high concentration of point defects in the matrix. The size of the dislocation loop is dependent on the point defect concentration in the matrix. A negative correlation between the irradiation temperature and the dislocation loop size was observed. A comparison between cascade dominated loop evolution (this study), diffusion dominated loop evolution (electron irradiation) and neutron irradiation suggests that heavy ion irradiation alone may not be enough to accurately reproduce neutron irradiation induced loop structures. An alternative method is proposed in this paper. The effects of Sn on the displacement cascades, defect yield, and the diffusion behavior of point defects are established.

Experimental aspects of S.H.I.C. (Swift Heavy Ion Channeling)

International Nuclear Information System (INIS)

Andriamonje, S.; Castro Faria, N.V. de; Chevallier, M.; Gaillard, M.J.; Genre, R.; Farizon-Mazuy, B.; Poizat, J.C.; Remillieux, J.; Hage-Ali, M.; Cohen, C.; L'Hoir, A.; Moulin, J.; Schmaus, D.

1989-01-01

The mean stopping power experienced by the ions of exit charge Z and the charge distribution are measured. The experimental set up description is summarized. The experiments were performed at GANIL, using hydrogenoid Xenon ions, with 25 MeV/u on a silicon crystal target. The ion channeling and energy losses are measured. The results concerning the Lyman alpha lines intensity and Xe36 + transmission as a function of the crystal orientation are presented. The suitability of LISE device, for investigating crystalline effects in heavy ion charge exchange phenomena, is confirmed

Improvement of herbage by heavy ion beams

International Nuclear Information System (INIS)

Xie Hongmei; Hao Jifang; Wei Zengquan; Xie Zhongkui; Li Fengqin; Wang Yajun

2004-01-01

Herbage seeds of legume and grass were irradiated in penetration by 80 MeV/u 20 Ne 10+ ions. The results of field tests and observations of the root-tip cells showed that growth of the seedling was obviously weakened with increasing doses. Frequencies of chromosomal aberration and micronucleus increased significantly with increasing doses. According to the field growth tests, radiation sensitivity of grass herbage to the heavy ion beams was much higher than leguminous herbage, and suitable dose of the heavy ion irradiation for the grass and leguminous herbage is 20-30 Gy and 150 Gy, respectively

Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ions

International Nuclear Information System (INIS)

Kachurin, G. A.; Cherkova, S. G.; Skuratov, V. A.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.

2011-01-01

Thermally grown SiO 2 layers have been irradiated with 700-MeV Bi ions with doses of (3–10) × 10 12 cm −2 . It is found that, even after a dose of 3 × 10 12 cm −2 , a photoluminescence band in the region of 600 nm appears. Its intensity levels off at a dose of ∼5 × 10 12 cm −2 . The nature of the emission centers is studied by the methods of infrared transmission, Raman scattering, X-ray photoelectron spectroscopy, ellipsometry, and the reaction to passivating low-temperature anneals. It is established that irradiation brings about a decrease in the number of Si-O bonds with a relevant increase in the Si-Si bonds. It is assumed that the photoluminescence is caused by nanostructures containing an excess Si and/or having a deficit of O. The reaction of reduction of SiO 2 proceeds in ion tracks due to high levels of ionization and heating within these tracks. The dose dependence is used to estimate the diameter of a track at 8–9 nm.

Detection of DNA lesion induced by heavy ion irradiation using DNA repair related proteins in cultured cells

International Nuclear Information System (INIS)

Eguchi-Kasai, Kiyomi; Tsujita, Sena

2006-01-01

We studied the localization of phosphorylated H2AX (γ-H2AX) in cultured human fibroblasts after irradiation with heavy ion beams. Asynchronous human normal fibroblasts (NB1RGB) were irradiated with X-rays, C (LET≅85 keV/μm), Si (240 keV/μm), Ar (85 keV/μm), and Fe (440 keV/μm) ion beams. Gamma-H2AX was measured in irradiated cells from 0 to 24 h after irradiation using flow cytometry. The fluorescent signal of γ-H2AX increased just after irradiation of each radiation and reached maximum around 30 nun and then, decreased. At 30 min after irradiation, γ-H2AX signal increased with increasing the radiation dose for both X-rays and Fe ion. The slope of fitting line for the Fe ion was bigger than that of X-rays. Foci of γ-H2AX on cell nuclei were counted under the laser scanning confocal microscopy at 30 min after. Number of foci per nucleus was increased with increasing dose of each radiation. (author)

Superconductivity of tin and lead after heavy ion irradiation below 7.2 K

International Nuclear Information System (INIS)

Klaumuenzer, S.

1978-01-01

In this work the influence of radiation defects induced by heavy ion irradiation at low temperatures on the specific residual resistivity, the critical temperature of superconductivity, and the width of the resistive-superconductive phase transition have been measured for lead and tin as a function of dose and subsequent isochronous annealing. In the case of lead the critical magnetic field parallel to the surface of the sample, which in a wide range of defect contrations is identical with the surface superconductivity critical field, also has been measured at 5 K and 6 K as a function of dose and subsequent isochronous annealing. As projectiles 25 MeV oxygen ions have been used for irradiation, with a sufficiently low particle flux to obtain irradiation temperatures below about 7.2 K. However these temperatures are large enough to allow for free motion of interstitial atoms in the case of lead. For tin the results presented here also suggest free motion of the defects. (orig./WBU) [de

In situ and postradiation analysis of mechanical stress in Al{sub 2}O{sub 3}:Cr induced by swift heavy-ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Skuratov, V.A., E-mail: skuratov@jinr.r [Joint Institute for Nuclear Research, Dubna 141980 (Russian Federation); Bujnarowski, G. [Institute of Physics, Opole University, 45-052 Opole (Poland); Kovalev, Yu.S. [Joint Institute for Nuclear Research, Dubna 141980 (Russian Federation); O' Connell, J. [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Havanscak, K. [Eoetvoes University, Pazmany P. setany 1/A, H-1117 Budapest (Hungary)

2010-10-01

Optical spectroscopy and TEM techniques have been applied to study the radiation damage and correlated mechanical stresses in Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}:Cr single crystals induced by (1-3) MeV/amu Kr, Xe and Bi ion irradiation. Mechanical stresses were evaluated in situ using a piezospectroscopic effect through the shift of the respective lines in ionoluminescence spectra. It was found that dose dependence of the stress level for Xe and Bi ions, when ionization energy loss exceeds the threshold of damage formation via electronic excitations, exhibits several alternate stages showing the build-up and relaxation of stresses. The beginning of relaxation stages is observed at fluences associated with beginning of individual ion track regions overlapping. The residual stress profiles through the ion irradiated layers were deduced from depth-resolved photostimulated spectra using laser confocal scanning microscopy set-up. It was determined that stresses are compressive in basal plane and tensile in perpendicular direction in all samples irradiated with high energy ions.

Irradiation of Polystyrene and Polypropylene to study NIH 3T3 fibroblasts adhesion

International Nuclear Information System (INIS)

Arbeitman, C.R.; Grosso, M.F. del; Ibanez, I.; Garcia Bermudez, G.; Duran, H.; Chappa, V.C.; Mazzei, R.; Behar, M.

2010-01-01

When polymers are irradiated with heavy ions new chemical groups are created in a few microns of the material. The irradiation changed the polarity and wettability on the surface so that could enhance the biocompatibility of the modified polymer. The study of chemistry and nanoscale topography of the biomaterial is important in determining its potential applications in medicine and biotechnology, because their strong influence on cell function, adhesion and proliferation. In this study, thin films of Polystyrene and Polypropylene samples were modified by irradiation with low energy ion beams (30-150 keV) and swift heavy ions both with various fluences and energies. The changes were evaluated with different methods. Adhesion of NIH 3T3 fibroblasts onto unirradiated and irradiated surfaces has been studied by in vitro techniques. The correlations between physicochemical properties as a function of different irradiations parameters were compared with cell adhesion on the modified polymer surface.